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Sample records for high efficiency epitaxial

  1. High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, L.; Schmidt, J.; Wagner, T.A.; Bergmann, R.B. [Stuttgart Univ. (Germany). Inst. of Physical Electronics

    2001-07-01

    Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 {mu}m, obtained at a record deposition rate of 0.8 {mu}m/min and a deposition temperature of 650{sup o}C with a prebake at 810{sup o}C. A thin-film Si solar cell with a 20-{mu}m-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps. (author)

  2. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  3. High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

    Energy Technology Data Exchange (ETDEWEB)

    Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

    2006-05-04

    The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

  4. Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers

    Science.gov (United States)

    Kaul, T.; Erbert, G.; Maaßdorf, A.; Martin, D.; Crump, P.

    2018-02-01

    Broad area lasers that are tailored to be most efficient at the highest achievable optical output power are sought by industry to decrease operation costs and improve system performance. Devices using Extreme-Double-ASymmetric (EDAS) epitaxial designs are promising candidates for improved efficiency at high optical output powers due to low series resistance, low optical loss and low carrier leakage. However, EDAS designs leverage ultra-thin p-side waveguides, meaning that the optical mode is shifted into the n-side waveguide, resulting in a low optical confinement in the active region, low gain and hence high threshold current, limiting peak performance. We introduce here explicit design considerations that enable EDAS-based devices to be developed with increased optical confinement in the active layer without changing the p-side layer thicknesses. Specifically, this is realized by introducing a third asymmetric component in the vicinity of the quantum well. We call this approach Extreme-Triple-ASymmetric (ETAS) design. A series of ETAS-based vertical designs were fabricated into broad area lasers that deliver up to 63% power conversion efficiency at 14 W CW optical output power from a 100 μm stripe laser, which corresponds to the operation point of a kW optical output power in a laser bar. The design process, the impact of structural changes on power saturation mechanisms and finally devices with improved performance will be presented.

  5. Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

    International Nuclear Information System (INIS)

    Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

    2006-01-01

    Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

  6. High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    M.R. Philip

    2017-06-01

    Full Text Available We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111 by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40% internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2.

  7. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    Science.gov (United States)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  8. Efficient Exciton Diffusion and Resonance-Energy Transfer in Multi-Layered Organic Epitaxial Nanofibers

    DEFF Research Database (Denmark)

    Tavares, Luciana; Cadelano, Michele; Quochi, Francesco

    2015-01-01

    Multi-layered epitaxial nanofibers are exemplary model systems for the study of exciton dynamics and lasing in organic materials due to their well-defined morphology, high luminescence efficiencies, and color tunability. We resort to temperature-dependent cw and picosecond photoluminescence (PL......) spectroscopy to quantify exciton diffusion and resonance-energy transfer (RET) processes in multi-layered nanofibers consisting of alternating layers of para-hexaphenyl (p6P) and α-sexithiophene (6T), serving as exciton donor and acceptor material, respectively. The high probability for RET processes...... is confirmed by Quantum Chemical calculations. The activation energy for exciton diffusion in p6P is determined to be as low as 19 meV, proving p6P epitaxial layers also as a very suitable donor material system. The small activation energy for exciton diffusion of the p6P donor material, the inferred high p6P...

  9. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  10. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

  11. High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

    International Nuclear Information System (INIS)

    Jackson, S.L.; Fresina, M.T.; Baker, J.E.; Stillman, G.E.

    1994-01-01

    Efficient vapor source Si doping of InP and In 0.53 Ga 0.47 As have been demonstrated using SiBr 4 as the Si source for both gas source (GSMBE) and metalorganic molecular beam epitaxy (MOMBE). Net electron concentrations ranging from n=2x10 17 to 6.8x10 19 cm -3 and from 9x10 16 to 3x10 19 cm -3 have been obtained for InP and In 0.53 Ga 0.47 As, respectively. Comparison of these data with those for Si 2 H 6 indicate that the Si incorporation efficiency with SiBr 4 is more than 10 000 times greater than with Si 2 H 6 for substrate temperatures in the range of 475≤T s ≤500 degree C. Specular surface morphologies were obtained, even for the most heavily doped samples. While [Si] as high as 1.8x10 20 cm -3 was obtained in InP, the net electron concentrations and 300 K Hall mobilities decrease with increasing [Si] for [Si]>6.8x10 19 cm -3 . Contact resistances as low as R c =3x10 -8 Ω cm 2 were obtained using a nonalloyed Ti/Pt/Au contact to InP layers doped to n=6.3x10 19 cm -3 . During GSMBE growth, an increased Si background concentration ([Si]∼2x10 17 cm -3 ) was observed after extended use of the SiBr 4 source for these heavy doping concentrations. This increased background was not observed in MOMBE-grown material. Depth profiles of pulse-doped structures indicate the absence of memory effects for structures grown by MOMBE

  12. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  13. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  14. High-efficiency photovoltaic cells

    Science.gov (United States)

    Yang, H.T.; Zehr, S.W.

    1982-06-21

    High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

  15. Topotactic epitaxy of SrTiO3 mesocrystal superstructures with anisotropic construction for efficient overall water splitting

    International Nuclear Information System (INIS)

    Zhang, Peng; Fujitsuka, Mamoru; Majima, Tetsuro; Ochi, Tomoya; Kobori, Yasuhiro; Tachikawa, Takashi

    2017-01-01

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO 3 mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO 2 mesocrystals through a facile hydrothermal treatment. The SrTiO 3 mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Topotactic epitaxy of SrTiO{sub 3} mesocrystal superstructures with anisotropic construction for efficient overall water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peng; Fujitsuka, Mamoru; Majima, Tetsuro [The Institute of Scientific and Industrial Research (SANKEN), Osaka University (Japan); Ochi, Tomoya [Department of Chemistry, Graduate School of Science, Kobe University (Japan); Kobori, Yasuhiro [Department of Chemistry, Graduate School of Science, Kobe University (Japan); Molecular Photoscience Research Center, Kobe University (Japan); Tachikawa, Takashi [Department of Chemistry, Graduate School of Science, Kobe University (Japan); Molecular Photoscience Research Center, Kobe University (Japan); PRESTO, Science and Technology Agency (JST), Saitama (Japan)

    2017-05-02

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO{sub 3} mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO{sub 2} mesocrystals through a facile hydrothermal treatment. The SrTiO{sub 3} mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Rowland, L.B.; Brandt, C.D. [Northrop Grumman Science and Technology Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman Advanced Technology Lab., Baltimore, MD (United States)

    1998-06-01

    This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N{sub 2}. For four Si/C ratios, the doping concentration increased linearly as a function of increasing N{sub 2} partial pressure with a slope of 1.0 {+-} 0.03. Variation of propane mole fraction while the SiH{sub 4} and N{sub 2} mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions. (orig.) 14 refs.

  18. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  19. Topotactic Epitaxy of SrTiO3 Mesocrystal Superstructures with Anisotropic Construction for Efficient Overall Water Splitting.

    Science.gov (United States)

    Zhang, Peng; Ochi, Tomoya; Fujitsuka, Mamoru; Kobori, Yasuhiro; Majima, Tetsuro; Tachikawa, Takashi

    2017-05-02

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO 3 mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO 2 mesocrystals through a facile hydrothermal treatment. The SrTiO 3 mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Microwave impedance of epitaxial high-temperature superconductor films

    International Nuclear Information System (INIS)

    Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

    1995-01-01

    In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

  1. Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

    1994-01-01

    Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

  2. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  3. Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging

    Science.gov (United States)

    Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team

    The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.

  4. High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

    International Nuclear Information System (INIS)

    Miller, B.I.; Young, M.G.; Oron, M.; Koren, U.; Kisker, D.

    1990-01-01

    High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH 3 . Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH 3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds I th as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies η D were as high as 21%/facet with a low internal loss α=21 cm -1 . In addition I th as low as 18 mA and η D as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH 3 without compromising on laser performance

  5. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  6. CBE growth of high-quality ZnO epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2006-03-15

    Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

    International Nuclear Information System (INIS)

    Greul, Thomas; Comenda, Christian; Preis, Karl; Gerdenitsch, Johann; Sagl, Raffaela; Hassel, Achim Walter

    2013-01-01

    Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm −2 ) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

  8. The origin of local strain in highly epitaxial oxide thin films.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  9. Highly efficient high temperature electrolysis

    DEFF Research Database (Denmark)

    Hauch, Anne; Ebbesen, Sune; Jensen, Søren Højgaard

    2008-01-01

    High temperature electrolysis of water and steam may provide an efficient, cost effective and environmentally friendly production of H-2 Using electricity produced from sustainable, non-fossil energy sources. To achieve cost competitive electrolysis cells that are both high performing i.e. minimum...... internal resistance of the cell, and long-term stable, it is critical to develop electrode materials that are optimal for steam electrolysis. In this article electrolysis cells for electrolysis of water or steam at temperatures above 200 degrees C for production of H-2 are reviewed. High temperature...... electrolysis is favourable from a thermodynamic point of view, because a part of the required energy can be supplied as thermal heat, and the activation barrier is lowered increasing the H-2 production rate. Only two types of cells operating at high temperature (above 200 degrees C) have been described...

  10. HIGH EFFICIENCY TURBINE

    OpenAIRE

    VARMA, VIJAYA KRUSHNA

    2012-01-01

    Varma designed ultra modern and high efficiency turbines which can use gas, steam or fuels as feed to produce electricity or mechanical work for wide range of usages and applications in industries or at work sites. Varma turbine engines can be used in all types of vehicles. These turbines can also be used in aircraft, ships, battle tanks, dredgers, mining equipment, earth moving machines etc, Salient features of Varma Turbines. 1. Varma turbines are simple in design, easy to manufac...

  11. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  12. Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals.

    Science.gov (United States)

    Kulkarni, Aditya; Evers, Wiel H; Tomić, Stanko; Beard, Matthew C; Vanmaekelbergh, Daniel; Siebbeles, Laurens D A

    2018-01-23

    Carrier multiplication (CM) is a process in which a single photon excites two or more electrons. CM is of interest to enhance the efficiency of a solar cell. Until now, CM in thin films and solar cells of semiconductor nanocrystals (NCs) has been found at photon energies well above the minimum required energy of twice the band gap. The high threshold of CM strongly limits the benefits for solar cell applications. We show that CM is more efficient in a percolative network of directly connected PbSe NCs. The CM threshold is at twice the band gap and increases in a steplike fashion with photon energy. A lower CM efficiency is found for a solid of weaker coupled NCs. This demonstrates that the coupling between NCs strongly affects the CM efficiency. According to device simulations, the measured CM efficiency would significantly enhance the power conversion efficiency of a solar cell.

  13. High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

    NARCIS (Netherlands)

    Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

    2013-01-01

    We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

  14. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

    Science.gov (United States)

    Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

    2016-05-04

    Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

  15. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

    Directory of Open Access Journals (Sweden)

    Chad A. Stephenson

    2016-12-01

    Full Text Available Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germylmethane, or (H3Ge4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE. Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE.

  16. High-quality GaN epitaxially grown on Si substrate with serpentine channels

    Science.gov (United States)

    Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

    2018-06-01

    A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

  17. Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

    2007-07-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

  18. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  19. High-efficiency CARM

    Energy Technology Data Exchange (ETDEWEB)

    Bratman, V.L.; Kol`chugin, B.D.; Samsonov, S.V.; Volkov, A.B. [Institute of Applied Physics, Nizhny Novgorod (Russian Federation)

    1995-12-31

    The Cyclotron Autoresonance Maser (CARM) is a well-known variety of FEMs. Unlike the ubitron in which electrons move in a periodical undulator field, in the CARM the particles move along helical trajectories in a uniform magnetic field. Since it is much simpler to generate strong homogeneous magnetic fields than periodical ones for a relatively low electron energy ({Brit_pounds}{le}1-3 MeV) the period of particles` trajectories in the CARM can be sufficiently smaller than in the undulator in which, moreover, the field decreases rapidly in the transverse direction. In spite of this evident advantage, the number of papers on CARM is an order less than on ubitron, which is apparently caused by the low (not more than 10 %) CARM efficiency in experiments. At the same time, ubitrons operating in two rather complicated regimes-trapping and adiabatic deceleration of particles and combined undulator and reversed guiding fields - yielded efficiencies of 34 % and 27 %, respectively. The aim of this work is to demonstrate that high efficiency can be reached even for a simplest version of the CARM. In order to reduce sensitivity to an axial velocity spread of particles, a short interaction length where electrons underwent only 4-5 cyclotron oscillations was used in this work. Like experiments, a narrow anode outlet of a field-emission electron gun cut out the {open_quotes}most rectilinear{close_quotes} near-axis part of the electron beam. Additionally, magnetic field of a small correcting coil compensated spurious electron oscillations pumped by the anode aperture. A kicker in the form of a sloping to the axis frame with current provided a control value of rotary velocity at a small additional velocity spread. A simple cavity consisting of a cylindrical waveguide section restricted by a cut-off waveguide on the cathode side and by a Bragg reflector on the collector side was used as the CARM-oscillator microwave system.

  20. Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

    International Nuclear Information System (INIS)

    Turner, G.W.; Choi, H.K.; Calawa, D.R.

    1994-01-01

    Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

  1. Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

    Science.gov (United States)

    Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

    2008-01-18

    Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

  2. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

    1988-01-01

    We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

  3. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    Science.gov (United States)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  4. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Tseng, Chien-Chih; Li, Jun; Shi, Yumeng; Wei, Nini; Zhang, Daliang; Consiglio, Giuseppe Bernardo; Prabaswara, Aditya; Alhamoud, Abdullah Ali; Albadri, Abdulrahman  M.; Alyamani, Ahmed Y.; Zhang, Xixiang; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  5. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao

    2017-05-18

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  6. Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics

    Directory of Open Access Journals (Sweden)

    Nagata T

    2009-01-01

    Full Text Available Abstract Highly uniform and c-axis-aligned ZnO nanorod arrays were fabricated in predefined patterns by a low temperature homoepitaxial aqueous chemical method. The nucleation seed patterns were realized in polymer and in metal thin films, resulting in, all-ZnO and bottom-contacted structures, respectively. Both of them show excellent geometrical uniformity: the cross-sectional uniformity according to the scanning electron micrographs across the array is lower than 2%. The diameter of the hexagonal prism-shaped nanorods can be set in the range of 90–170 nm while their typical length achievable is 0.5–2.3 μm. The effect of the surface polarity was also examined, however, no significant difference was found between the arrays grown on Zn-terminated and on O-terminated face of the ZnO single crystal. The transmission electron microscopy observation revealed the single crystalline nature of the nanorods. The current–voltage characteristics taken on an individual nanorod contacted by a Au-coated atomic force microscope tip reflected Schottky-type behavior. The geometrical uniformity, the designable pattern, and the electrical properties make the presented nanorod arrays ideal candidates to be used in ZnO-based DC nanogenerator and in next-generation integrated piezoelectric nano-electromechanical systems (NEMS.

  7. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bhasker, H. P.; Dhar, S.; Sain, A.; Kesaria, Manoj; Shivaprasad, S. M.

    2012-01-01

    Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

  8. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  9. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  10. Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method

    Directory of Open Access Journals (Sweden)

    Vakiv N. M.

    2013-12-01

    Full Text Available Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE. In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper a technique of growing bilateral high-voltage silicon p—i—n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5•1018 cm–3 contact layers: 0.4—0.8 at. % aluminum in gallium melt for growing p-Si-layers and 0.03—0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc.

  11. Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures

    International Nuclear Information System (INIS)

    Carvajal, J.; Raghothamachar, B.; Silvestre, O.; Chen, H.; Pujol, M.; Petrov, V.; Dudley, M.; Aguilo, M.; Diaz, F.

    2009-01-01

    In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

  12. High efficiency positron moderation

    International Nuclear Information System (INIS)

    Taqqu, D.

    1990-01-01

    A new positron moderation scheme is proposed. It makes use of electric and magnetic fields to confine the β + emitted by a radioactive source forcing them to slow down within a thin foil. A specific arrangement is described where an intermediary slowed-down beam of energy below 10 keV is produced. By directing it towards a standard moderator optimal conversion into slow positrons is achieved. This scheme is best applied to short lived β + emitters for which a 25% moderation efficiency can be reached. Within the state of the art technology a slow positron source intensity exceeding 2 x 10 10 e + /sec is achievable. (orig.)

  13. Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

    Science.gov (United States)

    Tellekamp, M. Brooks; Shank, Joshua C.; Goorsky, Mark S.; Doolittle, W. Alan

    2016-12-01

    Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material quality. Both lattice matched and mismatched lithium niobate are grown by molecular beam epitaxy and studied to understand the role of substrate and temperature on nucleation conditions and material quality. Growth on sapphire produces partially coalesced columnar grains with atomically flat plateaus and no twin planes. A symmetric rocking curve shows a narrow linewidth with a full width at half-maximum (FWHM) of 8.6 arcsec (0.0024°), which is comparable to the 5.8 arcsec rocking curve FWHM of the substrate, while the film asymmetric rocking curve is 510 arcsec FWHM. These values indicate that the individual grains are relatively free of long-range disorder detectable by x-ray diffraction with minimal measurable tilt and twist and represents the highest structural quality epitaxial material grown on lattice mismatched sapphire without twin planes. Lithium niobate is also grown on lithium tantalate producing high quality coalesced material without twin planes and with a symmetric rocking curve of 193 arcsec, which is nearly equal to the substrate rocking curve of 194 arcsec. The surface morphology of lithium niobate on lithium tantalate is shown to be atomically flat by atomic force microscopy.

  14. Strain in epitaxial high-index Bi{sub 2}Se{sub 3}(221) films grown by molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Chen, Weiguang [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Guo, Xin; Ho, Wingkin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Jia, Jinfeng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Collaborative Innovation Center of Advanced Microstructures, Department of Physics and Astronomy, Shanghai Jiaotong University, 800 Dongchuan Road, Shanghai 200240 (China); Xie, Maohai, E-mail: mhxie@hku.hk [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong)

    2017-02-28

    Highlights: • High-index, off c-axis, Bi{sub 2}Se{sub 3} has been grown by molecular beam epitaxy on In{sub 2}Se{sub 3}. • A retarded strain relaxation process in such high-index Bi{sub 2}Se{sub 3} is observed, enabling experimentally probe strain effect on topological insulators. • It has been shown by calculation that the Dirac electrons participate in chemical bonding at the heterointerface. - Abstract: High-index Bi{sub 2}Se{sub 3}(221) film has been grown on In{sub 2}Se{sub 3}-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi{sub 2}Se{sub 3}(221) can be attributed to the layered structure of Bi{sub 2}Se{sub 3} crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi{sub 2}Se{sub 3} and In{sub 2}Se{sub 3} by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

  15. N-polar GaN epitaxy and high electron mobility transistors

    International Nuclear Information System (INIS)

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  16. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  17. High efficiency thin-film solar cells for space applications: challenges and opportunities

    NARCIS (Netherlands)

    Leest, R.H. van

    2017-01-01

    In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

  18. Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

    Science.gov (United States)

    2016-08-02

    defects :=()llowed by a second buffer epilayer gro\\\\ th with ~: urn thickness with high n-type dopi:1g (- 5£17 cm-3) for the same C/Si ratio of ~1.4 at...gradient, pressure , etc.) can further reduce the parasitic deposition, especially in TFS-growth. • Thick epitaxy on-axis 4H-SiC Growth at High Growth...From - To) 08/02/2016 Final Technical Report 01-Apr-10 Through 31-Mar-14 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Development of High Quality 4H

  19. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-02-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

  20. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  1. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-02-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

  2. Epitaxial YBa2Cu3O7 films on rolled-textured metals for high temperature superconducting applications

    International Nuclear Information System (INIS)

    Norton, D.P.; Park, C.; Prouteau, C.

    1998-04-01

    The epitaxial growth of high temperature superconducting (HTS) films on rolled-textured metal represents a viable approach for long-length superconducting tapes. Epitaxial, 0.5 microm thick YBa 2 Cu 3 O 7 (YBCO) films with critical current densities, J c , greater than 1 MA/cm 2 have been realized on rolled-textured (001) Ni tapes with yttria-stabilized zirconia (YSZ)/CeO 2 oxide buffer layers. This paper describes the synthesis using pulsed-laser deposition (PLD) of epitaxial oxide buffer layers on biaxially-textured metal that comprise the so-called rolling-assisted biaxially-textured substrates (RABiTs trademark). The properties of the buffer and YBa 2 Cu 3 O 7 films on rolled-textured Ni are discussed, with emphasis given to the crystallographic and microstructural properties that determine the superconducting properties of these multilayer structures

  3. Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong, E-mail: xswu@pku.edu.cn [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)

    2015-01-05

    We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

  4. Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine

    Energy Technology Data Exchange (ETDEWEB)

    Hommel, D.; Scholl, S.; Kuhn, T.A.; Ossau, W.; Waag, A.; Landwehr, G. (Univ. Wuerzburg, Physikalisches Inst. (Germany)); Bilger, G. (Univ. Stuttgart, Inst. fuer Physikalische Elektronik (Germany))

    1993-01-30

    Chlorine has been used successfully for the first time for n-type doping of CdTe epitaxial layers (epilayers) grown by photo-assisted molecular beam epitaxy. Similar to n-type doping of ZnSe layers, ZnCl[sub 2] has been used as source material. The free-carrier concentration can be varied over more than three orders of magnitude by changing the ZnCl[sub 2] oven temperature. Peak mobilities are 4700 cm[sup 2] V[sup -1] s[sup -1] for an electron concentration of 2x10[sup 16] cm[sup -3] and 525 cm[sup 2] V[sup -1] s[sup -1] for 2x10[sup 18] cm[sup -3]. The electrical transport data obtained by Van der Pauw configuration and Hall structure measurements are consistent with each other, indicating a good uniformity of the epilayers. In photoluminescence the donor-bound-exciton emission dominates for all chlorine concentrations. This contasts significantly with results obtained for indium doping, commonly used for obtaining n-type CdTe epilayers. The superiority of chlorine over indium doping and the influence of growth parameters on the behaviour of CdTe:Cl layers will be discussed on the basis of transport, luminescence, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy data. (orig.).

  5. New highly efficient piezoceramic materials

    International Nuclear Information System (INIS)

    Dantsiger, A.Ya.; Razumovskaya, O.N.; Reznichenko, L.A.; Grineva, L.D.; Devlikanova, R.U.; Dudkina, S.I.; Gavrilyachenko, S.V.; Dergunova, N.V.

    1993-01-01

    New high efficient piezoceramic materials with various combination of parameters inclusing high Curie point for high-temperature transducers using in atomic power engineering are worked. They can be used in systems for heated matters nondestructive testing, controllers for varied industrial power plants and other high-temperature equipment

  6. Carbon dioxide and water adsorption on highly epitaxial Delafossite CuFeO2 thin film

    Science.gov (United States)

    Rojas, S.; Joshi, T.; Borisov, P.; Sarabia, M.; Lederman, D.; Cabrera, A. L.

    2015-03-01

    Thermal programmed desorption (TPD) of CO2 and H2O from a 200 nm thick CuFeO2 Delafossite surface was performed in a standard UHV chamber, The CuFeO2 thin film grown using Pulsed Laser Deposition (PLD) over an Al2O3 (0001) substrate with controlled O2 atmosphere resulted with highly epitaxial crystal structure. The adsorption/desorption of CO2 and H2O process was also monitored with X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Our results revealed that carbon dioxide interacts with CuFeO2 forming Fe carbonates compounds on its surface. Hydroxides were also formed on the surface due to water presence. Using TPD data, Arrhenius plots for CO2 and water desorption were done and activation energy for desorption was obtained. Funds FONDECyT 1130372; Thanks to P. Ferrari.

  7. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    Science.gov (United States)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-22

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  8. Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals

    NARCIS (Netherlands)

    Kulkarni, A.; Evers, W.H.; Tomić, Stanko; Beard, Matthew C.; Vanmaekelbergh, Daniel; Siebbeles, L.D.A.

    2018-01-01

    Carrier multiplication (CM) is a process in which a single photon excites two or more electrons. CM is of interest to enhance the efficiency of a solar cell. Until now, CM in thin films and solar cells of semiconductor nanocrystals (NCs) has been found at photon energies well above the minimum

  9. Molecular beam epitaxy for high-performance Ga-face GaN electron devices

    International Nuclear Information System (INIS)

    Kaun, Stephen W; Speck, James S; Wong, Man Hoi; Mishra, Umesh K

    2013-01-01

    Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT performance steadily improved, mainly through the optimization of device fabrication processes. Soon, HEMT performance will be limited by the crystalline quality of the epistructure. MBE offers heterostructure growth with highly abrupt interfaces, low point defect concentrations, and very low carbon and hydrogen impurity concentrations. Minimizing parasitic leakage pathways and resistances is essential in the growth of HEMTs for high-frequency and high-power applications. Through growth on native substrates with very low threading dislocation density, low-leakage HEMTs with very low on-resistance can be realized. Ga-rich plasma-assisted MBE (PAMBE) has been studied extensively, and it is clear that this technique has inherent limitations, including a high density of leakage pathways and a very small growth parameter space. Relatively new MBE growth techniques—high-temperature N-rich PAMBE and ammonia-based MBE—are being developed to circumvent the shortcomings of Ga-rich PAMBE. (invited review)

  10. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  11. Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

    Science.gov (United States)

    Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

    2008-10-01

    The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

  12. Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

    International Nuclear Information System (INIS)

    Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

    2008-01-01

    The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm -3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x10 19 cm -3

  13. Solid phase epitaxial growth of high mobility La:BaSnO_3 thin films co-doped with interstitial hydrogen

    International Nuclear Information System (INIS)

    Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Moram, Michelle A.; Ide, Keisuke; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    This work presents the solid phase epitaxial growth of high mobility La:BaSnO_3 thin films on SrTiO_3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO_3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm"2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO_3 thin films, and a 9%–16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO_3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO_3 thin films were increased to 3 × 10"1"9" cm"−"3 and in La:BaSnO_3 thin films from 6 × 10"1"9" cm"−"3 to 1.5 × 10"2"0" cm"−"3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO_3 electron effective mass of 0.27 ± 0.05 m_0 and an optical mobility of 26 ± 7 cm"2/Vs. As compared to La:BaSnO_3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO_3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

  14. Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC

    Science.gov (United States)

    Volkova, Anna; Ivantsov, Vladimir; Leung, Larry

    2011-01-01

    The employment of more than 10 μm thick AlN epilayers on SiC substrates for AlGaN/GaN high-electron-mobility transistors (HEMTs) substantially raises their performance in high-power energy-efficient amplifiers for 4G wireless mobile stations. In this paper, structural properties and surface morphology of thick AlN epilayers deposited by hydride vapor phase epitaxy (HVPE) on off-axis conductive 6H-SiC substrates are reported. The epilayers were examined in detail by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), Nomarski differential interference contrast (DIC), scanning electron microscopy (SEM), and selective wet chemical etching. At optimal substrate preparation and growth conditions, a full width at half-maximum (FWHM) of the XRD rocking curve (RC) for the symmetric (00.2) reflex was very close to that of the substrate (less than 40 arcsec) suggesting low screw dislocation density in the epilayer (˜10 6 cm -2) and small in-plane tilt misorientation. Reciprocal space mapping around asymmetric reflexes and measured lattice parameters indicated a fully relaxed state of the epilayers. The unit-cell-high stepped areas of the epilayers with 0.5 nm root mean square (RMS) roughness over 1×1 μm 2 scan were alternated with step-bunching instabilities up to 350 nm in height. Low warp of the substrates makes them suitable for precise epitaxy of HEMT structures.

  15. Unconventional, High-Efficiency Propulsors

    DEFF Research Database (Denmark)

    Andersen, Poul

    1996-01-01

    The development of ship propellers has generally been characterized by search for propellers with as high efficiency as possible and at the same time low noise and vibration levels and little or no cavitation. This search has lead to unconventional propulsors, like vane-wheel propulsors, contra-r...

  16. Unit cell determination of epitaxial thin films based on reciprocal space vectors by high-resolution X-ray diffractometry

    OpenAIRE

    Yang, Ping; Liu, Huajun; Chen, Zuhuang; Chen, Lang; Wang, John

    2013-01-01

    A new approach, based on reciprocal space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry (HR-XRD). The lattice parameters of single crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of raw unit cell, subsequent conversion to the Niggli unit ...

  17. Overview of Ecological Agriculture with High Efficiency

    OpenAIRE

    Huang, Guo-qin; Zhao, Qi-guo; Gong, Shao-lin; Shi, Qing-hua

    2012-01-01

    From the presentation, connotation, characteristics, principles, pattern, and technologies of ecological agriculture with high efficiency, we conduct comprehensive and systematic analysis and discussion of the theoretical and practical progress of ecological agriculture with high efficiency. (i) Ecological agriculture with high efficiency was first advanced in China in 1991. (ii) Ecological agriculture with high efficiency highlights "high efficiency", "ecology", and "combination". (iii) Ecol...

  18. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

    2006-01-01

    In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

  19. Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

    2011-01-01

    In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

  20. Resistivity Effects of Cation Ordering in Highly-Doped La2-xSrxCu4 Epitaxial Thin Films

    Science.gov (United States)

    Burquest, Franklin; Marmol, Rodrigo; Cox, Nicholas; Nelson-Cheeseman, Brittany

    Highly-doped La2-xSrxCuO4 (LSCO) films (0.5 causes internal polar electrostatic forces, which have been shown to cause stretching of the apical oxygen bond in analogous epitaxial nickelate films. Thin film samples are grown concurrently to minimize extraneous effects on film structure and properties. Atomic force microscopy and x-ray reflectivity demonstrate that the films are single crystalline, epitaxial, and smooth. X-ray diffraction is used to measure the c-axis of the films as a function of doping and dopant cation ordering. Electrical transport data of the ordered samples is compared with transport data of conventional disordered cation samples. Preliminary data indicates significant differences in resistivity at both 300K and 10K between the cation-ordered and cation-disordered samples. This work indicates that dopant cation ordering within the layered cuprates could significantly modify the conduction mechanisms at play in these materials.

  1. High-power, high-efficiency FELs

    International Nuclear Information System (INIS)

    Sessler, A.M.

    1989-04-01

    High power, high efficiency FELs require tapering, as the particles loose energy, so as to maintain resonance between the electromagnetic wave and the particles. They also require focusing of the particles (usually done with curved pole faces) and focusing of the electromagnetic wave (i.e. optical guiding). In addition, one must avoid transverse beam instabilities (primarily resistive wall) and longitudinal instabilities (i.e sidebands). 18 refs., 7 figs., 3 tabs

  2. A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chien, C.J.; Bravman, J.C.

    1990-01-01

    The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

  3. High Efficiency Room Air Conditioner

    Energy Technology Data Exchange (ETDEWEB)

    Bansal, Pradeep [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-01-01

    This project was undertaken as a CRADA project between UT-Battelle and Geberal Electric Company and was funded by Department of Energy to design and develop of a high efficiency room air conditioner. A number of novel elements were investigated to improve the energy efficiency of a state-of-the-art WAC with base capacity of 10,000 BTU/h. One of the major modifications was made by downgrading its capacity from 10,000 BTU/hr to 8,000 BTU/hr by replacing the original compressor with a lower capacity (8,000 BTU/hr) but high efficiency compressor having an EER of 9.7 as compared with 9.3 of the original compressor. However, all heat exchangers from the original unit were retained to provide higher EER. The other subsequent major modifications included- (i) the AC fan motor was replaced by a brushless high efficiency ECM motor along with its fan housing, (ii) the capillary tube was replaced with a needle valve to better control the refrigerant flow and refrigerant set points, and (iii) the unit was tested with a drop-in environmentally friendly binary mixture of R32 (90% molar concentration)/R125 (10% molar concentration). The WAC was tested in the environmental chambers at ORNL as per the design rating conditions of AHAM/ASHRAE (Outdoor- 95F and 40%RH, Indoor- 80F, 51.5%RH). All these modifications resulted in enhancing the EER of the WAC by up to 25%.

  4. High-efficient electron linacs

    International Nuclear Information System (INIS)

    Glavatskikh, K.V.; Zverev, B.V.; Kalyuzhnyj, V.E.; Morozov, V.L.; Nikolaev, S.V.; Plotnikov, S.N.; Sobenin, N.P.; Vovna, V.A.; Gryzlov, A.V.

    1993-01-01

    Comparison analysis of ELA on running and still waves designed for 10 MeV energy and with high efficiency is carried out. It is shown, that from the point of view of dimensions ELA with a still wave or that of a combined type is more preferable. From the point of view of impedance characteristics in any variant with application of magnetron as HF-generator it is necessary to implement special requirements to the accelerating structure if no ferrite isolation is provided in HF-channel. 3 refs., 4 figs., 1 tab

  5. Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

    Science.gov (United States)

    Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

    2018-03-01

    La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

  6. Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells

    International Nuclear Information System (INIS)

    Goradia, C.; Geier, J.V.; Weinberg, I.

    1987-01-01

    Using a fairly comprehensive model, the authors did a parametric variation study of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Their calculations show that with good quality epitaxial material, a BOL efficiency of about 20.3% at 1AMO, 25 0 C may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected radiation damage of the performance parameters by 1MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells

  7. Approaching the Dirac point in high-mobility multilayer epitaxial graphene

    Czech Academy of Sciences Publication Activity Database

    Orlita, Milan; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

    2008-01-01

    Roč. 101, č. 26 (2008), 267601/1-267601/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:EU(XE) RITA -CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  8. Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

    Science.gov (United States)

    Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2017-11-01

    Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Shen, Ji-Lin

    2013-01-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  10. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    Science.gov (United States)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  11. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    International Nuclear Information System (INIS)

    Chang, Yongwei; Zhang, Miao; Deng, Chuang; Men, Chuanling; Chen, Da; Zhu, Lei; Yu, Wenjie; Wei, Xing; Di, Zengfeng; Wang, Xi

    2015-01-01

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10 17 cm −2 , the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10 17 cm −2 . • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10 17 cm −2 , the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10 17 cm −2 H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF 6 plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era

  12. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-08-15

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

  13. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  14. Towards highly efficient water photoelectrolysis

    Science.gov (United States)

    Elavambedu Prakasam, Haripriya

    ethylene glycol resulted in remarkable growth characteristics of titania nanotube arrays, hexagonal closed packed up to 1 mm in length, with tube aspect ratios of approximately 10,000. For the first time, complete anodization of the starting titanium foil has been demonstrated resulting in back to back nanotube array membranes ranging from 360 mum--1 mm in length. The nanotubes exhibited growth rates of up to 15 mum/hr. A detailed study on the factors affecting the growth rate and nanotube dimensions is presented. It is suggested that faster high field ionic conduction through a thinner barrier layer is responsible for the higher growth rates observed in electrolytes containing ethylene glycol. Methods to fabricate free standing, titania nanotube array membranes ranging in thickness from 50 microm--1000 mum has also been an outcome of this dissertation. In an effort to combine the charge transport properties of titania with the light absorption properties of iron (III) oxide, films comprised of vertically oriented Ti-Fe-O nanotube arrays on FTO coated glass substrates have been successfully synthesized in ethylene glycol electrolytes. Depending upon the Fe content the bandgap of the resulting films varied from about 3.26 to 2.17 eV. The Ti-Fe oxide nanotube array films demonstrated a photocurrent of 2 mA/cm2 under global AM 1.5 illumination with a 1.2% (two-electrode) photoconversion efficiency, demonstrating a sustained, time-energy normalized hydrogen evolution rate by water splitting of 7.1 mL/W·hr in a 1 M KOH solution with a platinum counter electrode under an applied bias of 0.7 V. The Ti-Fe-O material architecture demonstrates properties useful for hydrogen generation by water photoelectrolysis and, more importantly, this dissertation demonstrates that the general nanotube-array synthesis technique can be extended to other ternary oxide compositions of interest for water photoelectrolysis.

  15. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  16. Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials

    Science.gov (United States)

    Jang, Seon-Min; Yang, Su Chul

    2018-06-01

    Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO2 epitaxial growth and BaTiO3 conversion. Through the TiO2 epitaxial growth on FTO substrate, (001) oriented TiO2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO2 NBA was conducted to enlarge the surface area for effective Ba2+ ion diffusion during the perovskite conversion process from TiO2 to BaTiO3. The final structure of perovskite BaTiO3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

  17. Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials.

    Science.gov (United States)

    Jang, Seon-Min; Yang, Su Chul

    2018-06-08

    Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO 2 epitaxial growth and BaTiO 3 conversion. Through the TiO 2 epitaxial growth on FTO substrate, (001) oriented TiO 2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO 2 NBA was conducted to enlarge the surface area for effective Ba 2+ ion diffusion during the perovskite conversion process from TiO 2 to BaTiO 3 . The final structure of perovskite BaTiO 3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO 3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

  18. High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Posada Flores, F; Redondo-Cubero, A; Bengoechea, A; Brana, A F; Munoz, E [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM) and Dpto. IngenierIa Electronica (DIE), ETSI de Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gago, R [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Jimenez, A [Dpto. Electronica, Escuela Politecnica Superior, Universidad de Alcala, E-28805 Alcala de Henares, Madrid (Spain); Grambole, D, E-mail: fposada@die.upm.e [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PF 51019, D-01314 Dresden (Germany)

    2009-03-07

    Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal-organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction up to a depth of {approx}110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 {+-} 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.

  19. Epitaxial growth of quantum rods with high aspect ratio and compositional contrast

    International Nuclear Information System (INIS)

    Li, L. H.; Patriarche, G.; Fiore, A.

    2008-01-01

    The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in both an increased In compositional contrast between the QRs and surrounding layer, and an increased QR length. QRs with an aspect ratio of up to 10 were obtained, representing quasiquantum wires in a GaAs matrix. Due to modified confinement and strain potential, such nanostructure is promising for controlling gain polarization

  20. HIGH-EFFICIENCY INFRARED RECEIVER

    Directory of Open Access Journals (Sweden)

    A. K. Esman

    2016-01-01

    Full Text Available Recent research and development show promising use of high-performance solid-state receivers of the electromagnetic radiation. These receivers are based on the low-barrier Schottky diodes. The approach to the design of the receivers on the basis of delta-doped low-barrier Schottky diodes with beam leads without bias is especially actively developing because for uncooled receivers of the microwave radiation these diodes have virtually no competition. The purpose of this work is to improve the main parameters and characteristics that determine the practical relevance of the receivers of mid-infrared electromagnetic radiation at the operating room temperature by modifying the electrodes configuration of the diode and optimizing the distance between them. Proposed original design solution of the integrated receiver of mid-infrared radiation on the basis of the low-barrier Schottky diodes with beam leads allows to effectively adjust its main parameters and characteristics. Simulation of the electromagnetic characteristics of the proposed receiver by using the software package HFSS with the basic algorithm of a finite element method which implemented to calculate the behavior of electromagnetic fields on an arbitrary geometry with a predetermined material properties have shown that when the inner parts of the electrodes of the low-barrier Schottky diode is performed in the concentric elliptical convex-concave shape, it can be reduce the reflection losses to -57.75 dB and the standing wave ratio to 1.003 while increasing the directivity up to 23 at a wavelength of 6.09 μm. At this time, the rounded radii of the inner parts of the anode and cathode electrodes are equal 212 nm and 318 nm respectively and the gap setting between them is 106 nm. These parameters will improve the efficiency of the developed infrared optical-promising and electronic equipment for various purposes intended for work in the mid-infrared wavelength range. 

  1. High-efficiency wind turbine

    Science.gov (United States)

    Hein, L. A.; Myers, W. N.

    1980-01-01

    Vertical axis wind turbine incorporates several unique features to extract more energy from wind increasing efficiency 20% over conventional propeller driven units. System also features devices that utilize solar energy or chimney effluents during periods of no wind.

  2. High efficiency, long life terrestrial solar panel

    Science.gov (United States)

    Chao, T.; Khemthong, S.; Ling, R.; Olah, S.

    1977-01-01

    The design of a high efficiency, long life terrestrial module was completed. It utilized 256 rectangular, high efficiency solar cells to achieve high packing density and electrical output. Tooling for the fabrication of solar cells was in house and evaluation of the cell performance was begun. Based on the power output analysis, the goal of a 13% efficiency module was achievable.

  3. High efficiency turbine blade coatings

    Energy Technology Data Exchange (ETDEWEB)

    Youchison, Dennis L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gallis, Michail A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-06-01

    The development of advanced thermal barrier coatings (TBCs) of yttria stabilized zirconia (YSZ) that exhibit lower thermal conductivity through better control of electron beam - physical vapor deposition (EB-PVD) processing is of prime interest to both the aerospace and power industries. This report summarizes the work performed under a two-year Lab-Directed Research and Development (LDRD) project (38664) to produce lower thermal conductivity, graded-layer thermal barrier coatings for turbine blades in an effort to increase the efficiency of high temperature gas turbines. This project was sponsored by the Nuclear Fuel Cycle Investment Area. Therefore, particular importance was given to the processing of the large blades required for industrial gas turbines proposed for use in the Brayton cycle of nuclear plants powered by high temperature gas-cooled reactors (HTGRs). During this modest (~1 full-time equivalent (FTE)) project, the processing technology was developed to create graded TBCs by coupling ion beam-assisted deposition (IBAD) with substrate pivoting in the alumina-YSZ system. The Electron Beam - 1200 kW (EB-1200) PVD system was used to deposit a variety of TBC coatings with micron layered microstructures and reduced thermal conductivity below 1.5 W/m.K. The use of IBAD produced fully stoichiometric coatings at a reduced substrate temperature of 600°C and a reduced oxygen background pressure of 0.1 Pa. IBAD was also used to successfully demonstrate the transitioning of amorphous PVD-deposited alumina to the -phase alumina required as an oxygen diffusion barrier and for good adhesion to the substrate Ni2Al3 bondcoat. This process replaces the time consuming thermally grown oxide formation required before the YSZ deposition. In addition to the process technology, Direct Simulation Monte Carlo plume modeling and spectroscopic characterization of the PVD plumes were performed. The project consisted of five tasks. These included the

  4. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

    Science.gov (United States)

    Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

    2017-01-01

    GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

  5. Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Tous, Jan; Blazek, Karel; Kucera, Miroslav; Nikl, Martin; Mares, Jiri A.

    2012-01-01

    Very thin scintillator imaging plates have recently become of great interest. In high resolution X-ray radiography, very thin scintillator layers of about 5–20 μm are used to achieve 2D-spatial resolutions below 1 μm. Thin screens can be prepared by mechanical polishing from single crystals or by epitaxial growth on single-crystal substrates using the Liquid Phase Epitaxy technique (LPE). Other types of screens (e.g. deposited powder) do no reach required spatial resolutions. This work compares LPE-grown YAG and LuAG scintillator films doped with different rare earth ions (Cerium, Terbium and Europium). Two different fluxes were used in the LPE growth procedure. These LPE films are compared to YAG:Ce and LuAG:Ce screens made from bulk single crystals. Relative light yield was detected by a highly sensitive CCD camera. Scintillator screens were excited by a micro-focus X-ray source and the generated light was gathered by the CCD camera’s optical system. Scintillator 2D-homogeneity is examined in an X-ray imaging setup also using the CCD camera.

  6. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

    Science.gov (United States)

    Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

    2018-02-01

    It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

  7. High efficiency motor selection handbook

    Science.gov (United States)

    McCoy, Gilbert A.; Litman, Todd; Douglass, John G.

    1990-10-01

    Substantial reductions in energy and operational costs can be achieved through the use of energy-efficient electric motors. A handbook was compiled to help industry identify opportunities for cost-effective application of these motors. It covers the economic and operational factors to be considered when motor purchase decisions are being made. Its audience includes plant managers, plant engineers, and others interested in energy management or preventative maintenance programs.

  8. Growth of Highly Epitaxial YBa2Cu3O7-δ Films from a Simple Propionate-Based Solution

    DEFF Research Database (Denmark)

    Yue, Zhao; Torres, Pol; Tang, Xiao

    2015-01-01

    Intensive investigations have been conducted to develop epitaxial oxide thin films with superior electromagnetic performance by low-cost chemical solution deposition routes. In this paper, a novel propionate-based precursor solution without involving any other additive was proposed and employed...... to grow superconducting YBa2Cu3O7-δ (YBCO) films on LaAlO3 (LAO) single crystals. The precursor solutions are stable with a long shelf life of up to several months. Since the primary compositions are propionates after evaporating the solvent, the toxic reagents and evolved gases during solution synthesis...... and heat treatment can be eliminated completely. In this process, rapid pyrolysis and high conversation rate can also be achieved during growth of YBCO films in comparison with the conventional trifluoroacetate metal organic deposition routes. Remarkably, a 210 nm YBCO film exhibits high superconducting...

  9. Epitaxial growth of high temperature superconductors by cathodic sputtering I: thin films of YBaCuO

    International Nuclear Information System (INIS)

    Navacerrada, M.A.; Sefrioui, Z.; Arias, D.; Varela, M.; Loos, G.; Leon, C.; Lucia, M.L.; Santamaria, J.; Sanchez-Quesada, F.

    1998-01-01

    High quality c-oriented YBa 2 Cu 3 O 7 -x thin films have been grown on SrTiO 3 (100)substrates by high pressure sputtering in pure oxygen atmosphere. Low angle X-ray diffraction and atomic force microscopy were performed on films less than 250 angstrom thick showing a plenitude better than one unit cell. Moreover, the structural characterization by means of X ray φ scans showed that growth is epitaxial. The critical temperature has been measured by different ways and was always in the range 89.5-90.5K. the resistance transition is sharper than 1K and the mutual inductance response always shows magnetic losses peaks narrower than 0.3K. Critical current densities are in excess of 10''''6 angstrom/cm''''2 at 77K. (Author) 8 refs

  10. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Sitnikov, S. V., E-mail: sitnikov@isp.nsc.ru; Kosolobov, S. S.; Latyshev, A. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-02-15

    The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size D{sub crit}, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter D{sub crit}{sup 2} is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

  11. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique

    Science.gov (United States)

    Deng, Qiufang; Guo, Lu; Liang, Song; Sun, Siwei; Xie, Xiao; Zhu, Hongliang; Wang, Wei

    2018-04-01

    AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of - 2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.

  12. High-efficiency, thin-film- and concentrator solar cells from GaAs. Final report; High-efficiency, Duennschicht- und Konzentrator-Solarzellen aus Galliumarsenid. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Bett, A W [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Pilkuhn, M [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Scholz, F [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Baldus, A [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Blieske, U [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Blug, A [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Duong, T [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Schetter, C [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Stollwerck, G [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Sulima, O [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Wegener, A [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Doernen, A [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Frankowsky, G [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Haase, D [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Hahn, G [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Hangleiter, A [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Stauss, P [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Tsai, C Y [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Zieger, K [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4

    1996-10-01

    Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack formation. By a simultanous optimization of the other epitaxy and process parameters, the efficiency was increased up to 16.6% AM0 on 1 cm{sup 2} solar cells. Furthermore a hybrid epitaxy was investigated. A GaAs layer was deposited onto a Si substrate using MOVPE. The solar cell structure was grown with a low temperature LPE. Unexpected difficulties appeared with this process, so that fundamental experiments needed to be done with the LPE technology. So far, no solar cells could be manufactured with this method. In addition, work was performed on GaInP solar cells on GaAs substrate. An efficiency of 15.7% (AM0) was acchieved. (orig.) [Deutsch] Gegenstand des Projekts war die Herstellung hocheffizienter GaAs-Solarzellen und die Fertigung von Konzentratorsolarzellen. Dazu wurden wesentliche Fortschritte bei der Materialpraeparation, der Solarzellentechnologie und der Material- and Prozesscharakterisierung erzielt. Diese Erfolge druecken sich in den erzielten Wirkungsgraden aus: - GaAs-Solarzelle hergestellt mit MOVPE-Technologie: 22.9% auf 4 cm{sup 2} (AM1.5g) - GaAs-Solarzelle hergestellt

  13. High resolution x-ray scattering studies of strain in epitaxial thin films of yttrium silicide grown on silicon (111)

    International Nuclear Information System (INIS)

    Marthinez-Miranda, L.J.; Santiago-Aviles, J.J.; Siegal, M.P.; Graham, W.R.; Heiney, P.A.

    1990-01-01

    The authors have used high resolution grazing incidence x-ray scattering (GIXS) to study the in- plane and out-of-plane structure of epitaxial YSi 2-x films grown on Si(111), with thicknesses ranging from 85 Angstrom to 510 Angstrom. Their results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846 Angstrom/c = 4.142 Angstrom for the 85 Angstrom film to a = 3.877 Angstrom/c = 4.121 Angstrom for the 510 Angstrom film. The authors correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, the authors' measurements show no evidence for the existence of ordered silicon vacancies in the films

  14. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  15. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Kazuo Uchida

    2012-12-01

    Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

  16. High efficiency focus neutron generator

    Science.gov (United States)

    Sadeghi, H.; Amrollahi, R.; Zare, M.; Fazelpour, S.

    2017-12-01

    In the present paper, the new idea to increase the neutron yield of plasma focus devices is investigated and the results are presented. Based on many studies, more than 90% of neutrons in plasma focus devices were produced by beam target interactions and only 10% of them were due to thermonuclear reactions. While propounding the new idea, the number of collisions between deuteron ions and deuterium gas atoms were increased remarkably well. The COMSOL Multiphysics 5.2 was used to study the given idea in the known 28 plasma focus devices. In this circumstance, the neutron yield of this system was also obtained and reported. Finally, it was found that in the ENEA device with 1 Hz working frequency, 1.1 × 109 and 1.1 × 1011 neutrons per second were produced by D-D and D-T reactions, respectively. In addition, in the NX2 device with 16 Hz working frequency, 1.34 × 1010 and 1.34 × 1012 neutrons per second were produced by D-D and D-T reactions, respectively. The results show that with regards to the sizes and energy of these devices, they can be used as the efficient neutron generators.

  17. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

    Science.gov (United States)

    Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

    2011-10-01

    We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

  18. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  19. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

    International Nuclear Information System (INIS)

    Chen, R. S.; Tsai, H. Y.; Huang, Y. S.; Chen, Y. T.; Chen, L. C.; Chen, K. H.

    2012-01-01

    The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height (φ B = 160 ± 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 ± 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

  20. Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

    Science.gov (United States)

    Xiangming, Xu; Jingfeng, Huang; Han, Yu; Wensheng, Qian; Zhengliang, Zhou; Bo, Han; Yong, Wang; Pengfei, Wang; Zhang, David Wei

    2015-06-01

    A laterally diffused metal-oxide-semiconductor (LDMOS) device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device performance under high frequency. Based upon the device design, radio-frequency (RF) LDMOS transistors for GSM (global system for mobile communication) application have been fabricated by using 0.35 μm CMOS technologies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency (PAE) is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 : 1 voltage standing wave ratio (VSWR) load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point (P10dB). The device ruggedness has been remarkably improved by using the proposed device structure. Project supported by the Chinese National Key Project (No. 2012ZX02502).

  1. Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

    International Nuclear Information System (INIS)

    Xu Xiangming; Wang Yong; Wang Pengfei; David Wei Zhang; Huang Jingfeng; Yu Han; Qian Wensheng; Zhou Zhengliang; Han Bo

    2015-01-01

    A laterally diffused metal–oxide–semiconductor (LDMOS) device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device performance under high frequency. Based upon the device design, radio-frequency (RF) LDMOS transistors for GSM (global system for mobile communication) application have been fabricated by using 0.35 μm CMOS technologies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency (PAE) is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 : 1 voltage standing wave ratio (VSWR) load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point (P 10dB ). The device ruggedness has been remarkably improved by using the proposed device structure. (paper)

  2. Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

    Science.gov (United States)

    Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

    2018-02-01

    The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

  3. H{sub 2}O{sub 2}-molecular beam epitaxy of high quality ZnO

    Energy Technology Data Exchange (ETDEWEB)

    El Shaer, A.; Bakin, A.; Che Mofor, A.; Kreye, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Blaesing, J.; Krost, A. [Otto-von-Guericke-University, Institute of Experimental Physics, Magdeburg (Germany); Stoimenos, J. [Aristotele University, Physics Department, Thessaloniki (Greece); Pecz, B. [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest (Hungary)

    2007-07-15

    We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H{sub 2}O{sub 2}-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphire with a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H{sub 2}O{sub 2}-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. (orig.)

  4. High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, M. E.; Carver, A. G.; Jones, T. J.; Greer, F.; Hamden, E.; Goodsall, T.

    2013-01-01

    In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

  5. Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

    2012-01-01

    Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

  6. Epitaxial YBa2Cu3O7 on biaxially textured (001) Ni: An approach to high critical current density superconducting tapes

    International Nuclear Information System (INIS)

    Norton, D.P.; Goyal, A.; Budai, J.D.

    1997-01-01

    In-plane aligned, c-axis oriented YBa 2 Cu 3 O 7 (YBCO) films with superconducting critical current densities, J c , as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermo-mechanically, rolled-textured (001) Ni tapes using pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured Ni, formed by recrystallization of cold-rolled pure Ni, enables the growth of 1.5 micrometer-thick YBCO films with superconducting properties that are comparable to those observed for epitaxial films on single crystal oxide substrates. This result represents a viable approach for producing long-length superconducting tapes for high current, high field applications at 77 kelvin

  7. Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Chierchia, Rosa

    2007-07-01

    This thesis treats strain and dislocations in MOVPE GaN layers. The mosaic structure of metalorganic vapour phase epitaxy (MOVPE)-grown GaN layers was studied in dependence on the grain diameter utilizing high-resolution XRD. Different models for the defect structure were analyzed, the edge type TD densities were calculated under the assumption that the dislocations are not randomly distributed but localized at the grain boundaries. Moreover, in situ measurements have shown that the layers are under tension in the c-plane when a nucleation layer is used. The second part of this thesis treats a particular approach to reduce dislocations in MOVPE GaN layers, i.e. maskless pendeo epitaxial growth of MOVPE GAN layers. FE simulations assuming the strain to be completely induced during cooling of the structures after growth agree only partly with experimental data. The strain state of single layers and stripes of GaN grown on SiC was studied to exploit the evolution of the strain in the different phases of the PE growth. The biaxial compressive stress, due to the lattice mismatch between the GaN layer and the AlN nucleation layer is plastically relieved before overgrowth. Temperature dependent measurements show a linear reduction of the wing tilt with increasing temperature varying from sample to sample. Bent TDs have been observed in TEM images of maskless PE samples. Stress induced from the mismatch between the AlN buffer layer and the GaN also contributes to the remaining part of the wing tilt not relieved thermally. It has to be noted that the rest tilt value varies from sample to sample at the growth temperature. In fact some of the data indicate that the wing tilt decreases with increasing V/III ratio. In the last Chapter the application of X-ray techniques for the analysis of strain and composition in layers of inhomogeneous composition is explored. In the first part of the Chapter the strain state and the Al content of AlGaN buffer layers grown directly on (0001

  8. Critical study of high efficiency deep grinding

    OpenAIRE

    Johnstone, lain

    2002-01-01

    The recent years, the aerospace industry in particular has embraced and actively pursued the development of stronger high performance materials, namely nickel based superalloys and hardwearing steels. This has resulted in a need for a more efficient method of machining, and this need was answered with the advent of High Efficiency Deep Grinding (HEDG). This relatively new process using Cubic Boron Nitride (CBN) electroplated grinding wheels has been investigated through experim...

  9. Structure and chemistry of epitaxial ceria thin films on yttria-stabilized zirconia substrates, studied by high resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sinclair, Robert, E-mail: bobsinc@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, Sang Chul, E-mail: sclee99@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Shi, Yezhou; Chueh, William C. [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States)

    2017-05-15

    We have applied aberration-corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS) to study the structure and chemistry of epitaxial ceria thin films, grown by pulsed laser deposition onto (001) yttria-stabilized zirconia (YSZ) substrates. There are few observable defects apart from the expected mismatch interfacial dislocations and so the films would be expected to have good potential for applications. Under high electron beam dose rate (above about 6000 e{sup -}/Å{sup 2}s) domains of an ordered structure appear and these are interpreted as being created by oxygen vacancy ordering. The ordered structure does not appear at lower lose rates (ca. 2600 e{sup -}/Å{sup 2}s) and can be removed by imaging under 1 mbar oxygen gas in an environmental TEM. EELS confirms that there is both oxygen deficiency and the associated increase in Ce{sup 3+} versus Ce{sup 4+} cations in the ordered domains. In situ high resolution TEM recordings show the formation of the ordered domains as well as atomic migration along the ceria thin film (001) surface. - Highlights: • The local structure and chemistry of ceria can be studied by TEM combined with EELS. • At lower electron, there are no observable changes in the ceria thin films. • At higher dose rates, an ordered phase is created due to oxygen vacancy ordering. • In situ HRTEM shows the oxygen vacancy ordering and the movement of surface atoms.

  10. Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

    International Nuclear Information System (INIS)

    Giess, E.A.; Sandstrom, R.L.; Gallagher, W.J.; Gupta, A.; Shinde, S.L.; Cook, R.F.; Cooper, E.L.; O'Sullivan, E.M.J.; Roldan, J.M.; Segmuller, A.D.; Angilello, J.

    1990-01-01

    This paper reports on the use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-T c superconducting Ba 2 YCu 3 O 7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼ 277 for SrTiO 3 ). This study was undertaken to further explore the use of LaGaO 3 , NdGaO 3 , SrTiO 3 , MgO, and Y-stabilized ZrO 2 substrates, prepared from single-crystal joules grown by several suppliers using the Czochralski method. Films were prepared by cylindrical magnetron sputtering and laser ablation. Substrate evaluations included measurement of dielectric constant and loss, thermal expansion, and mechanical hardness and toughness. In addition to their moderate dielectric constants, they were found to have satisfactory mechanical properties, except for the twinning tendency of LaGaO 3 . Lattice mismatch strains were calculated for orthorhombic BYCO films on a number of substrates. NdGaO 3 was found to have the best lattice match with BYCO, and is now available twin-free

  11. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  12. Design Strategies for Ultra-high Efficiency Photovoltaics

    Science.gov (United States)

    Warmann, Emily Cathryn

    While concentrator photovoltaic cells have shown significant improvements in efficiency in the past ten years, once these cells are integrated into concentrating optics, connected to a power conditioning system and deployed in the field, the overall module efficiency drops to only 34 to 36%. This efficiency is impressive compared to conventional flat plate modules, but it is far short of the theoretical limits for solar energy conversion. Designing a system capable of achieving ultra high efficiency of 50% or greater cannot be achieved by refinement and iteration of current design approaches. This thesis takes a systems approach to designing a photovoltaic system capable of 50% efficient performance using conventional diode-based solar cells. The effort began with an exploration of the limiting efficiency of spectrum splitting ensembles with 2 to 20 sub cells in different electrical configurations. Incorporating realistic non-ideal performance with the computationally simple detailed balance approach resulted in practical limits that are useful to identify specific cell performance requirements. This effort quantified the relative benefit of additional cells and concentration for system efficiency, which will help in designing practical optical systems. Efforts to improve the quality of the solar cells themselves focused on the development of tunable lattice constant epitaxial templates. Initially intended to enable lattice matched multijunction solar cells, these templates would enable increased flexibility in band gap selection for spectrum splitting ensembles and enhanced radiative quality relative to metamorphic growth. The III-V material family is commonly used for multijunction solar cells both for its high radiative quality and for the ease of integrating multiple band gaps into one monolithic growth. The band gap flexibility is limited by the lattice constant of available growth templates. The virtual substrate consists of a thin III-V film with the desired

  13. X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H.Y.; Kao, Y.C.; Kim, T.S.

    1990-01-01

    High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

  14. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

    Science.gov (United States)

    Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

    2018-06-01

    We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.

  15. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

    International Nuclear Information System (INIS)

    Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

    2015-01-01

    The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

  16. High conversion efficiency and high radiation resistance InP solar cells

    International Nuclear Information System (INIS)

    Yamamoto, Akio; Itoh, Yoshio; Yamaguchi, Masafumi

    1987-01-01

    The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)

  17. Progress of OLED devices with high efficiency at high luminance

    Science.gov (United States)

    Nguyen, Carmen; Ingram, Grayson; Lu, Zhenghong

    2014-03-01

    Organic light emitting diodes (OLEDs) have progressed significantly over the last two decades. For years, OLEDs have been promoted as the next generation technology for flat panel displays and solid-state lighting due to their potential for high energy efficiency and dynamic range of colors. Although high efficiency can readily be obtained at low brightness levels, a significant decline at high brightness is commonly observed. In this report, we will review various strategies for achieving highly efficient phosphorescent OLED devices at high luminance. Specifically, we will provide details regarding the performance and general working principles behind each strategy. We will conclude by looking at how some of these strategies can be combined to produce high efficiency white OLEDs at high brightness.

  18. Measure Guideline. High Efficiency Natural Gas Furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Brand, L. [Partnership for Advanced Residential Retrofit (PARR), Des Plaines, IL (United States); Rose, W. [Partnership for Advanced Residential Retrofit (PARR), Des Plaines, IL (United States)

    2012-10-01

    This measure guideline covers installation of high-efficiency gas furnaces, including: when to install a high-efficiency gas furnace as a retrofit measure; how to identify and address risks; and the steps to be used in the selection and installation process. The guideline is written for Building America practitioners and HVAC contractors and installers. It includes a compilation of information provided by manufacturers, researchers, and the Department of Energy as well as recent research results from the Partnership for Advanced Residential Retrofit (PARR) Building America team.

  19. Measure Guideline: High Efficiency Natural Gas Furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Brand, L.; Rose, W.

    2012-10-01

    This Measure Guideline covers installation of high-efficiency gas furnaces. Topics covered include when to install a high-efficiency gas furnace as a retrofit measure, how to identify and address risks, and the steps to be used in the selection and installation process. The guideline is written for Building America practitioners and HVAC contractors and installers. It includes a compilation of information provided by manufacturers, researchers, and the Department of Energy as well as recent research results from the Partnership for Advanced Residential Retrofit (PARR) Building America team.

  20. Experiments on high efficiency aerosol filtration

    International Nuclear Information System (INIS)

    Mazzini, M.; Cuccuru, A.; Kunz, P.

    1977-01-01

    Research on high efficiency aerosol filtration by the Nuclear Engineering Institute of Pisa University and by CAMEN in collaboration with CNEN is outlined. HEPA filter efficiency was studied as a function of the type and size of the test aerosol, and as a function of flowrate (+-50% of the nominal value), air temperature (up to 70 0 C), relative humidity (up to 100%), and durability in a corrosive atmosphere (up to 140 hours in NaCl mist). In the selected experimental conditions these influences were appreciable but are not sufficient to be significant in industrial HEPA filter applications. Planned future research is outlined: measurement of the efficiency of two HEPA filters in series using a fixed particle size; dependence of the efficiency on air, temperatures up to 300-500 0 C; performance when subject to smoke from burning organic materials (natural rubber, neoprene, miscellaneous plastics). Such studies are relevant to possible accidental fires in a plutonium laboratory

  1. High efficiency, variable geometry, centrifugal cryogenic pump

    International Nuclear Information System (INIS)

    Forsha, M.D.; Nichols, K.E.; Beale, C.A.

    1994-01-01

    A centrifugal cryogenic pump has been developed which has a basic design that is rugged and reliable with variable speed and variable geometry features that achieve high pump efficiency over a wide range of head-flow conditions. The pump uses a sealless design and rolling element bearings to achieve high reliability and the ruggedness to withstand liquid-vapor slugging. The pump can meet a wide range of variable head, off-design flow requirements and maintain design point efficiency by adjusting the pump speed. The pump also has features that allow the impeller and diffuser blade heights to be adjusted. The adjustable height blades were intended to enhance the pump efficiency when it is operating at constant head, off-design flow rates. For small pumps, the adjustable height blades are not recommended. For larger pumps, they could provide off-design efficiency improvements. This pump was developed for supercritical helium service, but the design is well suited to any cryogenic application where high efficiency is required over a wide range of head-flow conditions

  2. Saving energy via high-efficiency fans.

    Science.gov (United States)

    Heine, Thomas

    2016-08-01

    Thomas Heine, sales and market manager for EC Upgrades, the retrofit arm of global provider of air movement solutions, ebm-papst A&NZ, discusses the retrofitting of high-efficiency fans to existing HVAC equipment to 'drastically reduce energy consumption'.

  3. Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Mattiazzo, S., E-mail: serena.mattiazzo@pd.infn.it [Università degli Studi di Padova, Padova IT 35131 (Italy); Aimo, I. [Politecnico di Torino and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Torino, Torino IT 10129 (Italy); Baudot, J. [Universitè de Strasbourg, IPHC, Strasbourg F67037 (France); CNRS, MMR7178, Strasbourg F67037 (France); Bedda, C. [Politecnico di Torino and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Torino, Torino IT 10129 (Italy); La Rocca, P. [Università di Catania and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Catania, Catania IT 95123 (Italy); Perez, A. [Universitè de Strasbourg, IPHC, Strasbourg F67037 (France); CNRS, MMR7178, Strasbourg F67037 (France); Riggi, F. [Università di Catania and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Catania, Catania IT 95123 (Italy); Spiriti, E. [Istituto Nazionale di Fisica Nucleare (INFN) Laboratori Nazionali di Frascati and Sezione di Roma 3, Roma IT 00146 (Italy)

    2015-10-01

    The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018–2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

  4. Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

    International Nuclear Information System (INIS)

    Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

    2015-01-01

    The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018–2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV

  5. Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

    Science.gov (United States)

    Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

    2015-10-01

    The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

  6. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications

    Energy Technology Data Exchange (ETDEWEB)

    Anzalone, R., E-mail: ruggero.anzalone@imm.cnr.it; Privitera, S.; Camarda, M.; Alberti, A.; Mannino, G.; Fiorenza, P.; Di Franco, S.; La Via, F.

    2015-08-15

    Graphical abstract: Figure shows the normalized capacitance (C/C{sub OX}) versus voltage (V) for the MOS capacitors on 3 μm, 7 μm thick 3C–SiC films and silicon (as reference), respectively. The shift of the curve respect to the reference is due to the presence of fixed and/or trapped charge in the oxide and interface trapped charge, due to the presence of interface states of density D{sub it}, located at the semiconductor/oxide interface. - Highlights: • We analyzed the flat-band voltage shift for different semiconductor epi-thickness. • The interface state density as a function of epi-defects was evaluated. • We observed the relationship between XRD and C–V results. • Epitaxial thickness influence on interface state density was evaluated. - Abstract: The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10{sup 11} cm{sup −2} eV{sup −1} was observed with improving the crystalline quality.

  7. High Efficiency Reversible Fuel Cell Power Converter

    DEFF Research Database (Denmark)

    Pittini, Riccardo

    as well as different dc-ac and dc-dc converter topologies are presented and analyzed. A new ac-dc topology for high efficiency data center applications is proposed and an efficiency characterization based on the fuel cell stack I-V characteristic curve is presented. The second part discusses the main...... converter components. Wide bandgap power semiconductors are introduced due to their superior performance in comparison to traditional silicon power devices. The analysis presents a study based on switching loss measurements performed on Si IGBTs, SiC JFETs, SiC MOSFETs and their respective gate drivers...

  8. Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

    Science.gov (United States)

    Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

    2015-03-01

    We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

  9. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  10. High Efficiency Centrifugal Compressor for Rotorcraft Applications

    Science.gov (United States)

    Medic, Gorazd; Sharma, Om P.; Jongwook, Joo; Hardin, Larry W.; McCormick, Duane C.; Cousins, William T.; Lurie, Elizabeth A.; Shabbir, Aamir; Holley, Brian M.; Van Slooten, Paul R.

    2017-01-01

    A centrifugal compressor research effort conducted by United Technologies Research Center under NASA Research Announcement NNC08CB03C is documented. The objectives were to identify key technical barriers to advancing the aerodynamic performance of high-efficiency, high work factor, compact centrifugal compressor aft-stages for turboshaft engines; to acquire measurements needed to overcome the technical barriers and inform future designs; to design, fabricate, and test a new research compressor in which to acquire the requisite flow field data. A new High-Efficiency Centrifugal Compressor stage -- splittered impeller, splittered diffuser, 90 degree bend, and exit guide vanes -- with aerodynamically aggressive performance and configuration (compactness) goals were designed, fabricated, and subquently tested at the NASA Glenn Research Center.

  11. High-Temperature High-Efficiency Solar Thermoelectric Generators

    Energy Technology Data Exchange (ETDEWEB)

    Baranowski, LL; Warren, EL; Toberer, ES

    2014-03-01

    Inspired by recent high-efficiency thermoelectric modules, we consider thermoelectrics for terrestrial applications in concentrated solar thermoelectric generators (STEGs). The STEG is modeled as two subsystems: a TEG, and a solar absorber that efficiently captures the concentrated sunlight and limits radiative losses from the system. The TEG subsystem is modeled using thermoelectric compatibility theory; this model does not constrain the material properties to be constant with temperature. Considering a three-stage TEG based on current record modules, this model suggests that 18% efficiency could be experimentally expected with a temperature gradient of 1000A degrees C to 100A degrees C. Achieving 15% overall STEG efficiency thus requires an absorber efficiency above 85%, and we consider two methods to achieve this: solar-selective absorbers and thermally insulating cavities. When the TEG and absorber subsystem models are combined, we expect that the STEG modeled here could achieve 15% efficiency with optical concentration between 250 and 300 suns.

  12. High efficiency and broadband acoustic diodes

    Science.gov (United States)

    Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

    2018-01-01

    Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

  13. Complexity-aware high efficiency video coding

    CERN Document Server

    Correa, Guilherme; Agostini, Luciano; Cruz, Luis A da Silva

    2016-01-01

    This book discusses computational complexity of High Efficiency Video Coding (HEVC) encoders with coverage extending from the analysis of HEVC compression efficiency and computational complexity to the reduction and scaling of its encoding complexity. After an introduction to the topic and a review of the state-of-the-art research in the field, the authors provide a detailed analysis of the HEVC encoding tools compression efficiency and computational complexity.  Readers will benefit from a set of algorithms for scaling the computational complexity of HEVC encoders, all of which take advantage from the flexibility of the frame partitioning structures allowed by the standard.  The authors also provide a set of early termination methods based on data mining and machine learning techniques, which are able to reduce the computational complexity required to find the best frame partitioning structures. The applicability of the proposed methods is finally exemplified with an encoding time control system that emplo...

  14. High Efficiency, Low Emission Refrigeration System

    Energy Technology Data Exchange (ETDEWEB)

    Fricke, Brian A [ORNL; Sharma, Vishaldeep [ORNL

    2016-08-01

    Supermarket refrigeration systems account for approximately 50% of supermarket energy use, placing this class of equipment among the highest energy consumers in the commercial building domain. In addition, the commonly used refrigeration system in supermarket applications is the multiplex direct expansion (DX) system, which is prone to refrigerant leaks due to its long lengths of refrigerant piping. This leakage reduces the efficiency of the system and increases the impact of the system on the environment. The high Global Warming Potential (GWP) of the hydrofluorocarbon (HFC) refrigerants commonly used in these systems, coupled with the large refrigerant charge and the high refrigerant leakage rates leads to significant direct emissions of greenhouse gases into the atmosphere. Methods for reducing refrigerant leakage and energy consumption are available, but underutilized. Further work needs to be done to reduce costs of advanced system designs to improve market utilization. In addition, refrigeration system retrofits that result in reduced energy consumption are needed since the majority of applications address retrofits rather than new stores. The retrofit market is also of most concern since it involves large-volume refrigerant systems with high leak rates. Finally, alternative refrigerants for new and retrofit applications are needed to reduce emissions and reduce the impact on the environment. The objective of this Collaborative Research and Development Agreement (CRADA) between the Oak Ridge National Laboratory and Hill Phoenix is to develop a supermarket refrigeration system that reduces greenhouse gas emissions and has 25 to 30 percent lower energy consumption than existing systems. The outcomes of this project will include the design of a low emission, high efficiency commercial refrigeration system suitable for use in current U.S. supermarkets. In addition, a prototype low emission, high efficiency supermarket refrigeration system will be produced for

  15. High efficiency novel window air conditioner

    International Nuclear Information System (INIS)

    Bansal, Pradeep

    2015-01-01

    Highlights: • Use of novel refrigerant mixture of R32/R125 (85/15% molar conc.) to reduce global warming and improve energy efficiency. • Use of novel features such as electronically commuted motor (ECM) fan motor, slinger and sub-merged sub-cooler. • Energy savings of up to 0.1 Quads per year in USA and much more in Asia/Middle East where WACs are used in large numbers. • Payback period of only 1.4 years of the novel efficient WAC. - Abstract: This paper presents the results of an experimental and analytical evaluation of measures to raise the efficiency of window air conditioners (WAC). In order to achieve a higher energy efficiency ratio (EER), the original capacity of a baseline R410A unit was reduced by replacing the original compressor with a lower capacity but higher EER compressor, while all heat exchangers and the chassis from the original unit were retained. Subsequent major modifications included – replacing the alternating current fan motor with a brushless high efficiency electronically commutated motor (ECM) motor, replacing the capillary tube with a needle valve to better control the refrigerant flow and refrigerant set points, and replacing R410A with a ‘drop-in’ lower global warming potential (GWP) binary mixture of R32/R125 (85/15% molar concentration). All these modifications resulted in significant enhancement in the EER of the baseline WAC. Further, an economic analysis of the new WAC revealed an encouraging payback period

  16. High efficiency carbon nanotube thread antennas

    Science.gov (United States)

    Amram Bengio, E.; Senic, Damir; Taylor, Lauren W.; Tsentalovich, Dmitri E.; Chen, Peiyu; Holloway, Christopher L.; Babakhani, Aydin; Long, Christian J.; Novotny, David R.; Booth, James C.; Orloff, Nathan D.; Pasquali, Matteo

    2017-10-01

    Although previous research has explored the underlying theory of high-frequency behavior of carbon nanotubes (CNTs) and CNT bundles for antennas, there is a gap in the literature for direct experimental measurements of radiation efficiency. These measurements are crucial for any practical application of CNT materials in wireless communication. In this letter, we report a measurement technique to accurately characterize the radiation efficiency of λ/4 monopole antennas made from the CNT thread. We measure the highest absolute values of radiation efficiency for CNT antennas of any type, matching that of copper wire. To capture the weight savings, we propose a specific radiation efficiency metric and show that these CNT antennas exceed copper's performance by over an order of magnitude at 1 GHz and 2.4 GHz. We also report direct experimental observation that, contrary to metals, the radiation efficiency of the CNT thread improves significantly at higher frequencies. These results pave the way for practical applications of CNT thread antennas, particularly in the aerospace and wearable electronics industries where weight saving is a priority.

  17. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  18. High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-10-11

    Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

  19. Photovoltaic x-ray detectors based on the GaAs epitaxial structures

    CERN Document Server

    Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

    2002-01-01

    The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

  20. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  1. High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

    Science.gov (United States)

    Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

    2017-11-01

    The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

  2. High efficiency lithium-thionyl chloride cell

    Science.gov (United States)

    Doddapaneni, N.

    1982-08-01

    The polarization characteristics and the specific cathode capacity of Teflon bonded carbon electrodes in the Li/SOCl2 system have been evaluated. Doping of electrocatalysts such as cobalt and iron phthalocyanine complexes improved both cell voltage and cell rate capability. High efficiency Li/SOCl2 cells were thus achieved with catalyzed cathodes. The electrochemical reduction of SOCl2 seems to undergo modification at catalyzed cathode. For example, the reduction of SOCl2 at FePc catalyzed cathode involves 2-1/2 e-/mole of SOCl2. Furthermore, the reduction mechanism is simplified and unwanted chemical species are eliminated by the catalyst. Thus a potentially safer high efficiency Li/SOCl2 can be anticipated.

  3. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    Science.gov (United States)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  4. Bioblendstocks that Enable High Efficiency Engine Designs

    Energy Technology Data Exchange (ETDEWEB)

    McCormick, Robert L.; Fioroni, Gina M.; Ratcliff, Matthew A.; Zigler, Bradley T.; Farrell, John

    2016-11-03

    The past decade has seen a high level of innovation in production of biofuels from sugar, lipid, and lignocellulose feedstocks. As discussed in several talks at this workshop, ethanol blends in the E25 to E50 range could enable more highly efficient spark-ignited (SI) engines. This is because of their knock resistance properties that include not only high research octane number (RON), but also charge cooling from high heat of vaporization, and high flame speed. Emerging alcohol fuels such as isobutanol or mixed alcohols have desirable properties such as reduced gasoline blend vapor pressure, but also have lower RON than ethanol. These fuels may be able to achieve the same knock resistance benefits, but likely will require higher blend levels or higher RON hydrocarbon blendstocks. A group of very high RON (>150) oxygenates such as dimethyl furan, methyl anisole, and related compounds are also produced from biomass. While providing no increase in charge cooling, their very high octane numbers may provide adequate knock resistance for future highly efficient SI engines. Given this range of options for highly knock resistant fuels there appears to be a critical need for a fuel knock resistance metric that includes effects of octane number, heat of vaporization, and potentially flame speed. Emerging diesel fuels include highly branched long-chain alkanes from hydroprocessing of fats and oils, as well as sugar-derived terpenoids. These have relatively high cetane number (CN), which may have some benefits in designing more efficient CI engines. Fast pyrolysis of biomass can produce diesel boiling range streams that are high in aromatic, oxygen and acid contents. Hydroprocessing can be applied to remove oxygen and consequently reduce acidity, however there are strong economic incentives to leave up to 2 wt% oxygen in the product. This oxygen will primarily be present as low CN alkyl phenols and aryl ethers. While these have high heating value, their presence in diesel fuel

  5. Evaluating performance of high efficiency mist eliminators

    Energy Technology Data Exchange (ETDEWEB)

    Waggoner, Charles A.; Parsons, Michael S.; Giffin, Paxton K. [Mississippi State University, Institute for Clean Energy Technology, 205 Research Blvd, Starkville, MS (United States)

    2013-07-01

    Processing liquid wastes frequently generates off gas streams with high humidity and liquid aerosols. Droplet laden air streams can be produced from tank mixing or sparging and processes such as reforming or evaporative volume reduction. Unfortunately these wet air streams represent a genuine threat to HEPA filters. High efficiency mist eliminators (HEME) are one option for removal of liquid aerosols with high dissolved or suspended solids content. HEMEs have been used extensively in industrial applications, however they have not seen widespread use in the nuclear industry. Filtering efficiency data along with loading curves are not readily available for these units and data that exist are not easily translated to operational parameters in liquid waste treatment plants. A specialized test stand has been developed to evaluate the performance of HEME elements under use conditions of a US DOE facility. HEME elements were tested at three volumetric flow rates using aerosols produced from an iron-rich waste surrogate. The challenge aerosol included submicron particles produced from Laskin nozzles and super micron particles produced from a hollow cone spray nozzle. Test conditions included ambient temperature and relative humidities greater than 95%. Data collected during testing HEME elements from three different manufacturers included volumetric flow rate, differential temperature across the filter housing, downstream relative humidity, and differential pressure (dP) across the filter element. Filter challenge was discontinued at three intermediate dPs and the filter to allow determining filter efficiency using dioctyl phthalate and then with dry surrogate aerosols. Filtering efficiencies of the clean HEME, the clean HEME loaded with water, and the HEME at maximum dP were also collected using the two test aerosols. Results of the testing included differential pressure vs. time loading curves for the nine elements tested along with the mass of moisture and solid

  6. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

    2005-01-01

    We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. High efficiency inverter and ballast circuits

    International Nuclear Information System (INIS)

    Nilssen, O.K.

    1984-01-01

    A high efficiency push-pull inverter circuit employing a pair of relatively high power switching transistors is described. The switching on and off of the transistors is precisely controlled to minimize power losses due to common-mode conduction or due to transient conditions that occur in the process of turning a transistor on or off. Two current feed-back transformers are employed in the transistor base drives; one being saturable for providing a positive feedback, and the other being non-saturable for providing a subtractive feedback

  8. Optimization of a high efficiency FEL amplifier

    International Nuclear Information System (INIS)

    Schneidmiller, E.A.; Yurkov, M.V.

    2014-10-01

    The problem of an efficiency increase of an FEL amplifier is now of great practical importance. Technique of undulator tapering in the post-saturation regime is used at the existing X-ray FELs LCLS and SACLA, and is planned for use at the European XFEL, Swiss FEL, and PAL XFEL. There are also discussions on the future of high peak and average power FELs for scientific and industrial applications. In this paper we perform detailed analysis of the tapering strategies for high power seeded FEL amplifiers. Application of similarity techniques allows us to derive universal law of the undulator tapering.

  9. Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Del Río-De Santiago, A.; Méndez-García, V.H. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Martínez-Velis, I.; Casallas-Moreno, Y.L. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); López-Luna, E. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Yu Gorbatchev, A. [IICO-UASLP, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P. 78210, México (Mexico); López-López, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); Cruz-Hernández, E., E-mail: esteban.cruz@uaslp.mx [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico)

    2015-04-01

    Highlights: • The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is found the formation of nanogrooves, nanoleaves, and nanowires. • It is shown the progressive photoluminescence transitions from purely GaAsMn zinc blende (for Mn% = 0.01) to a mixture of zinc blende and wurtzite GaAsMn (for Mn% = 0.2). • A critical thickness for the Mn catalyst effect was determined by RHEED. - Abstract: In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples is strongly influenced and changes from planar to corrugated for Mn% values from 0.01 to 0.05, corresponding to nanostructures on the surface with dimensions of 200–300 nm and with the shape of leave, to nanowire-like structures for Mn% values above 0.05. From reflection high-energy electron diffraction patterns, we observed the growth mode transition from two- to three-dimensional occurring at a Mn% exceeding 0.05. The optical and electrical properties were obtained from photoluminescence (PL) and Hall effect measurements, respectively. For the higher Mn concentration, besides the Mn related transitions at approximately 1.41 eV, PL spectra sharp peaks are present between 1.43 and 1.49 eV, which we related to the coexistence of zinc blende and wurtzite phases in the nanowire-like structures of this sample. At Mn% of 0.04, an increase of the carrier mobility up to a value of 1.1 × 10{sup 3} cm{sup 2}/Vs at 77 K was found, then decreases as Mn% is further increased due to the strengthening of the ionized impurity scattering.

  10. Highly efficient fully transparent inverted OLEDs

    Science.gov (United States)

    Meyer, J.; Winkler, T.; Hamwi, S.; Schmale, S.; Kröger, M.; Görrn, P.; Johannes, H.-H.; Riedl, T.; Lang, E.; Becker, D.; Dobbertin, T.; Kowalsky, W.

    2007-09-01

    One of the unique selling propositions of OLEDs is their potential to realize highly transparent devices over the visible spectrum. This is because organic semiconductors provide a large Stokes-Shift and low intrinsic absorption losses. Hence, new areas of applications for displays and ambient lighting become accessible, for instance, the integration of OLEDs into the windshield or the ceiling of automobiles. The main challenge in the realization of fully transparent devices is the deposition of the top electrode. ITO is commonly used as transparent bottom anode in a conventional OLED. To obtain uniform light emission over the entire viewing angle and a low series resistance, a TCO such as ITO is desirable as top contact as well. However, sputter deposition of ITO on top of organic layers causes damage induced by high energetic particles and UV radiation. We have found an efficient process to protect the organic layers against the ITO rf magnetron deposition process of ITO for an inverted OLED (IOLED). The inverted structure allows the integration of OLEDs in more powerful n-channel transistors used in active matrix backplanes. Employing the green electrophosphorescent material Ir(ppy) 3 lead to IOLED with a current efficiency of 50 cd/A and power efficiency of 24 lm/W at 100 cd/m2. The average transmittance exceeds 80 % in the visible region. The on-set voltage for light emission is lower than 3 V. In addition, by vertical stacking we achieved a very high current efficiency of more than 70 cd/A for transparent IOLED.

  11. MgO monolayer epitaxy on Ni (100)

    Science.gov (United States)

    Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

    2017-11-01

    The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

  12. High Efficiency Colloidal Quantum Dot Phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Kahen, Keith

    2013-12-31

    The project showed that non-Cd containing, InP-based nanocrystals (semiconductor materials with dimensions of ~6 nm) have high potential for enabling next-generation, nanocrystal-based, on chip phosphors for solid state lighting. Typical nanocrystals fall short of the requirements for on chip phosphors due to their loss of quantum efficiency under the operating conditions of LEDs, such as, high temperature (up to 150 °C) and high optical flux (up to 200 W/cm2). The InP-based nanocrystals invented during this project maintain high quantum efficiency (>80%) in polymer-based films under these operating conditions for emission wavelengths ranging from ~530 to 620 nm. These nanocrystals also show other desirable attributes, such as, lack of blinking (a common problem with nanocrystals which limits their performance) and no increase in the emission spectral width from room to 150 °C (emitters with narrower spectral widths enable higher efficiency LEDs). Prior to these nanocrystals, no nanocrystal system (regardless of nanocrystal type) showed this collection of properties; in fact, other nanocrystal systems are typically limited to showing only one desirable trait (such as high temperature stability) but being deficient in other properties (such as high flux stability). The project showed that one can reproducibly obtain these properties by generating a novel compositional structure inside of the nanomaterials; in addition, the project formulated an initial theoretical framework linking the compositional structure to the list of high performance optical properties. Over the course of the project, the synthetic methodology for producing the novel composition was evolved to enable the synthesis of these nanomaterials at a cost approximately equal to that required for forming typical conventional nanocrystals. Given the above results, the last major remaining step prior to scale up of the nanomaterials is to limit the oxidation of these materials during the tens of

  13. Highly Efficient Estimators of Multivariate Location with High Breakdown Point

    NARCIS (Netherlands)

    Lopuhaa, H.P.

    1991-01-01

    We propose an affine equivariant estimator of multivariate location that combines a high breakdown point and a bounded influence function with high asymptotic efficiency. This proposal is basically a location $M$-estimator based on the observations obtained after scaling with an affine equivariant

  14. Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Minh D. Nguyen

    2016-08-01

    Full Text Available Pb0.9La0.1(Zr0.52Ti0.48O3 (PLZT relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco of 13.7 J/cm3 together with a high energy efficiency (η of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4% which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

  15. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  16. High efficiency motors; Motores de alta eficiencia

    Energy Technology Data Exchange (ETDEWEB)

    Uranga Favela, Ivan Jaime [Energia Controlada de Mexico, S. A. de C. V., Mexico, D. F. (Mexico)

    1993-12-31

    This paper is a technical-financial study of the high efficiency and super-premium motors. As it is widely known, more than 60% of the electrical energy generated in the country is used for the operation of motors, in industry as well as in commerce. Therefore the importance that the motors have in the efficient energy use. [Espanol] El presente trabajo es un estudio tecnico-financiero de los motores de alta eficiencia y los motores super premium. Como es ampliamente conocido, mas del 60% de la energia electrica generada en el pais, es utilizada para accionar motores, dentro de la industria y el comercio. De alli la importancia que los motores tienen en el uso eficiente de la energia.

  17. High-efficiency organic glass scintillators

    Science.gov (United States)

    Feng, Patrick L.; Carlson, Joseph S.

    2017-12-19

    A new family of neutron/gamma discriminating scintillators is disclosed that comprises stable organic glasses that may be melt-cast into transparent monoliths. These materials have been shown to provide light yields greater than solution-grown trans-stilbene crystals and efficient PSD capabilities when combined with 0.01 to 0.05% by weight of the total composition of a wavelength-shifting fluorophore. Photoluminescence measurements reveal fluorescence quantum yields that are 2 to 5 times greater than conventional plastic or liquid scintillator matrices, which accounts for the superior light yield of these glasses. The unique combination of high scintillation light-yields, efficient neutron/gamma PSD, and straightforward scale-up via melt-casting distinguishes the developed organic glasses from existing scintillators.

  18. High efficiency motors; Motores de alta eficiencia

    Energy Technology Data Exchange (ETDEWEB)

    Uranga Favela, Ivan Jaime [Energia Controlada de Mexico, S. A. de C. V., Mexico, D. F. (Mexico)

    1992-12-31

    This paper is a technical-financial study of the high efficiency and super-premium motors. As it is widely known, more than 60% of the electrical energy generated in the country is used for the operation of motors, in industry as well as in commerce. Therefore the importance that the motors have in the efficient energy use. [Espanol] El presente trabajo es un estudio tecnico-financiero de los motores de alta eficiencia y los motores super premium. Como es ampliamente conocido, mas del 60% de la energia electrica generada en el pais, es utilizada para accionar motores, dentro de la industria y el comercio. De alli la importancia que los motores tienen en el uso eficiente de la energia.

  19. Advances in High-Efficiency III-V Multijunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Richard R. King

    2007-01-01

    Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

  20. High efficiency beam splitting for H- accelerators

    International Nuclear Information System (INIS)

    Kramer, S.L.; Stipp, V.; Krieger, C.; Madsen, J.

    1985-01-01

    Beam splitting for high energy accelerators has typically involved a significant loss of beam and radiation. This paper reports on a new method of splitting beams for H - accelerators. This technique uses a high intensity flash of light to strip a fraction of the H - beam to H 0 which are then easily separated by a small bending magnet. A system using a 900-watt (average electrical power) flashlamp and a highly efficient collector will provide 10 -3 to 10 -2 splitting of a 50 MeV H - beam. Results on the operation and comparisons with stripping cross sections are presented. Also discussed is the possibility for developing this system to yield a higher stripping fraction

  1. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    Science.gov (United States)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  2. High Quantum Efficiency OLED Lighting Systems

    Energy Technology Data Exchange (ETDEWEB)

    Shiang, Joseph [General Electric (GE) Global Research, Fairfield, CT (United States)

    2011-09-30

    The overall goal of the program was to apply improvements in light outcoupling technology to a practical large area plastic luminaire, and thus enable the product vision of an extremely thin form factor high efficiency large area light source. The target substrate was plastic and the baseline device was operating at 35 LPW at the start of the program. The target LPW of the program was a >2x improvement in the LPW efficacy and the overall amount of light to be delivered was relatively high 900 lumens. Despite the extremely difficult challenges associated with scaling up a wet solution process on plastic substrates, the program was able to make substantial progress. A small molecule wet solution process was successfully implemented on plastic substrates with almost no loss in efficiency in transitioning from the laboratory scale glass to large area plastic substrates. By transitioning to a small molecule based process, the LPW entitlement increased from 35 LPW to 60 LPW. A further 10% improvement in outcoupling efficiency was demonstrated via the use of a highly reflecting cathode, which reduced absorptive loss in the OLED device. The calculated potential improvement in some cases is even larger, ~30%, and thus there is considerable room for optimism in improving the net light coupling efficacy, provided absorptive loss mechanisms are eliminated. Further improvements are possible if scattering schemes such as the silver nanowire based hard coat structure are fully developed. The wet coating processes were successfully scaled to large area plastic substrate and resulted in the construction of a 900 lumens luminaire device.

  3. High-efficiency concentrator silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

    1990-11-01

    This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

  4. Nanooptics for high efficient photon managment

    Science.gov (United States)

    Wyrowski, Frank; Schimmel, Hagen

    2005-09-01

    Optical systems for photon management, that is the generation of tailored electromagnetic fields, constitute one of the keys for innovation through photonics. An important subfield of photon management deals with the transformation of an incident light field into a field of specified intensity distribution. In this paper we consider some basic aspects of the nature of systems for those light transformations. It turns out, that the transversal redistribution of energy (TRE) is of central concern to achieve systems with high transformation efficiency. Besides established techniques nanostructured optical elements (NOE) are demanded to implement transversal energy redistribution. That builds a bridge between the needs of photon management, optical engineering, and nanooptics.

  5. Highly Efficient Compression Algorithms for Multichannel EEG.

    Science.gov (United States)

    Shaw, Laxmi; Rahman, Daleef; Routray, Aurobinda

    2018-05-01

    The difficulty associated with processing and understanding the high dimensionality of electroencephalogram (EEG) data requires developing efficient and robust compression algorithms. In this paper, different lossless compression techniques of single and multichannel EEG data, including Huffman coding, arithmetic coding, Markov predictor, linear predictor, context-based error modeling, multivariate autoregression (MVAR), and a low complexity bivariate model have been examined and their performances have been compared. Furthermore, a high compression algorithm named general MVAR and a modified context-based error modeling for multichannel EEG have been proposed. The resulting compression algorithm produces a higher relative compression ratio of 70.64% on average compared with the existing methods, and in some cases, it goes up to 83.06%. The proposed methods are designed to compress a large amount of multichannel EEG data efficiently so that the data storage and transmission bandwidth can be effectively used. These methods have been validated using several experimental multichannel EEG recordings of different subjects and publicly available standard databases. The satisfactory parametric measures of these methods, namely percent-root-mean square distortion, peak signal-to-noise ratio, root-mean-square error, and cross correlation, show their superiority over the state-of-the-art compression methods.

  6. High efficiency double sided solar cells

    International Nuclear Information System (INIS)

    Seddik, M.M.

    1990-06-01

    Silicon technology state of the art for single crystalline was given to be limited to less than 20% efficiency. A proposed new form of photovoltaic solar cell of high current high efficiency with double sided structures has been given. The new forms could be n ++ pn ++ or p ++ np ++ double side junctions. The idea of double sided devices could be understood as two solar cells connected back-to-back in parallel electrical connection, in which the current is doubled if the cell is illuminated from both sides by a V-shaped reflector. The cell is mounted to the reflector such that each face is inclined at an angle of 45 deg. C to each side of the reflector. The advantages of the new structure are: a) High power devices. b) Easy to fabricate. c) The cells are used vertically instead of horizontal use of regular solar cell which require large area to install. This is very important in power stations and especially for satellite installation. If the proposal is made real and proved to be experimentally feasible, it would be a new era for photovoltaic solar cells since the proposal has already been extended to even higher currents. The suggested structures could be stated as: n ++ pn ++ Vp ++ np ++ ;n ++ pn ++ Vn ++ pn ++ ORp ++ np ++ Vp ++ np ++ . These types of structures are formed in wedged shape to employ indirect illumination by either parabolic; conic or V-shaped reflectors. The advantages of these new forms are low cost; high power; less in size and space; self concentrating; ... etc. These proposals if it happens to find their ways to be achieved experimentally, I think they will offer a short path to commercial market and would have an incredible impact on solar cell technology and applications. (author). 12 refs, 5 figs

  7. Simple Motor Control Concept Results High Efficiency at High Velocities

    Science.gov (United States)

    Starin, Scott; Engel, Chris

    2013-09-01

    The need for high velocity motors in space applications for reaction wheels and detectors has stressed the limits of Brushless Permanent Magnet Motors (BPMM). Due to inherent hysteresis core losses, conventional BPMMs try to balance the need for torque verses hysteresis losses. Cong-less motors have significantly less hysteresis losses but suffer from lower efficiencies. Additionally, the inherent low inductance in cog-less motors result in high ripple currents or high switching frequencies, which lowers overall efficiency and increases performance demands on the control electronics.However, using a somewhat forgotten but fully qualified technology of Isotropic Magnet Motors (IMM), extremely high velocities may be achieved at low power input using conventional drive electronics. This paper will discuss the trade study efforts and empirical test data on a 34,000 RPM IMM.

  8. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  9. High Efficiency, Illumination Quality OLEDs for Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Joseph Shiang; James Cella; Kelly Chichak; Anil Duggal; Kevin Janora; Chris Heller; Gautam Parthasarathy; Jeffery Youmans; Joseph Shiang

    2008-03-31

    The goal of the program was to demonstrate a 45 lumen per watt white light device based upon the use of multiple emission colors through the use of solution processing. This performance level is a dramatic extension of the team's previous 15 LPW large area illumination device. The fundamental material system was based upon commercial polymer materials. The team was largely able to achieve these goals, and was able to deliver to DOE a 90 lumen illumination source that had an average performance of 34 LPW a 1000 cd/m{sup 2} with peak performances near 40LPW. The average color temperature is 3200K and the calculated CRI 85. The device operated at a brightness of approximately 1000cd/m{sup 2}. The use of multiple emission colors particularly red and blue, provided additional degrees of design flexibility in achieving white light, but also required the use of a multilayered structure to separate the different recombination zones and prevent interconversion of blue emission to red emission. The use of commercial materials had the advantage that improvements by the chemical manufacturers in charge transport efficiency, operating life and material purity could be rapidly incorporated without the expenditure of additional effort. The program was designed to take maximum advantage of the known characteristics of these material and proceeded in seven steps. (1) Identify the most promising materials, (2) assemble them into multi-layer structures to control excitation and transport within the OLED, (3) identify materials development needs that would optimize performance within multilayer structures, (4) build a prototype that demonstrates the potential entitlement of the novel multilayer OLED architecture (5) integrate all of the developments to find the single best materials set to implement the novel multilayer architecture, (6) further optimize the best materials set, (7) make a large area high illumination quality white OLED. A photo of the final deliverable is shown

  10. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  11. Multiscale approaches to high efficiency photovoltaics

    Directory of Open Access Journals (Sweden)

    Connolly James Patrick

    2016-01-01

    Full Text Available While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency. The so-called third generation concepts attempt to break this limit through a combination of novel physical processes and new materials and concepts in organic and inorganic systems. Some examples of semi-empirical modelling in the field are reviewed, in particular for multispectral solar cells on silicon (French ANR project MultiSolSi. Their achievements are outlined, and the limits of these approaches shown. This introduces the main topic of this contribution, which is the use of multiscale experimental and theoretical techniques to go beyond the semi-empirical understanding of these systems. This approach has already led to great advances at modelling which have led to modelling software, which is widely known. Yet, a survey of the topic reveals a fragmentation of efforts across disciplines, firstly, such as organic and inorganic fields, but also between the high efficiency concepts such as hot carrier cells and intermediate band concepts. We show how this obstacle to the resolution of practical research obstacles may be lifted by inter-disciplinary cooperation across length scales, and across experimental and theoretical fields, and finally across materials systems. We present a European COST Action “MultiscaleSolar” kicking off in early 2015, which brings together experimental and theoretical partners in order to develop multiscale research in organic and inorganic materials. The goal of this defragmentation and interdisciplinary collaboration is to develop understanding across length scales, which will enable the full potential of third generation concepts to be evaluated in practise, for societal and industrial applications.

  12. Charged particle detection performances of CMOS pixel sensors produced in a 0.18 μm process with a high resistivity epitaxial layer

    Science.gov (United States)

    Senyukov, S.; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

    2013-12-01

    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 1013neq /cm2 was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz 0.18 μm CMOS process for the ALICE ITS upgrade.

  13. Charged particle detection performances of CMOS pixel sensors produced in a 0.18μm process with a high resistivity epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Senyukov, S., E-mail: serhiy.senyukov@cern.ch; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

    2013-12-01

    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz0.18μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10{sup 13}n{sub eq}/cm{sup 2} was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz0.18μm CMOS process for the ALICE ITS upgrade.

  14. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

  15. Insight into the epitaxial growth of high optical quality GaAs{sub 1–x}Bi{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Beaton, D. A., E-mail: daniel.beaton@nrel.gov; Mascarenhas, A.; Alberi, K. [National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States)

    2015-12-21

    The ternary alloy GaAs{sub 1–x}Bi{sub x} is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs{sub 1–x}Bi{sub x} epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., In{sub y}Ga{sub 1–y}As. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. The improved optical quality now opens up possibilities for the practical use of GaAs{sub 1–x}Bi{sub x} in optoelectronic devices.

  16. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  17. Design of High Efficient MPPT Solar Inverter

    Directory of Open Access Journals (Sweden)

    Sunitha K. A.

    2017-01-01

    Full Text Available This work aims to design a High Efficient Maximum Power Point Tracking (MPPT Solar Inverter. A boost converter is designed in the system to boost the power from the photovoltaic panel. By this experimental setup a room consisting of 500 Watts load (eight fluorescent tubes is completely controlled. It is aimed to decrease the maintenance cost. A microcontroller is introduced for tracking the P&O (Perturb and Observe algorithm used for tracking the maximum power point. The duty cycle for the operation of the boost convertor is optimally adjusted by using MPPT controller. There is a MPPT charge controller to charge the battery as well as fed to inverter which runs the load. Both the P&O scheme with the fixed variation for the reference current and the intelligent MPPT algorithm were able to identify the global Maximum power point, however the performance of the MPPT algorithm was better.

  18. High Efficiency Ka-Band Spatial Combiner

    Directory of Open Access Journals (Sweden)

    D. Passi

    2014-12-01

    Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

  19. Multi-petascale highly efficient parallel supercomputer

    Science.gov (United States)

    Asaad, Sameh; Bellofatto, Ralph E.; Blocksome, Michael A.; Blumrich, Matthias A.; Boyle, Peter; Brunheroto, Jose R.; Chen, Dong; Cher, Chen-Yong; Chiu, George L.; Christ, Norman; Coteus, Paul W.; Davis, Kristan D.; Dozsa, Gabor J.; Eichenberger, Alexandre E.; Eisley, Noel A.; Ellavsky, Matthew R.; Evans, Kahn C.; Fleischer, Bruce M.; Fox, Thomas W.; Gara, Alan; Giampapa, Mark E.; Gooding, Thomas M.; Gschwind, Michael K.; Gunnels, John A.; Hall, Shawn A.; Haring, Rudolf A.; Heidelberger, Philip; Inglett, Todd A.; Knudson, Brant L.; Kopcsay, Gerard V.; Kumar, Sameer; Mamidala, Amith R.; Marcella, James A.; Megerian, Mark G.; Miller, Douglas R.; Miller, Samuel J.; Muff, Adam J.; Mundy, Michael B.; O'Brien, John K.; O'Brien, Kathryn M.; Ohmacht, Martin; Parker, Jeffrey J.; Poole, Ruth J.; Ratterman, Joseph D.; Salapura, Valentina; Satterfield, David L.; Senger, Robert M.; Steinmacher-Burow, Burkhard; Stockdell, William M.; Stunkel, Craig B.; Sugavanam, Krishnan; Sugawara, Yutaka; Takken, Todd E.; Trager, Barry M.; Van Oosten, James L.; Wait, Charles D.; Walkup, Robert E.; Watson, Alfred T.; Wisniewski, Robert W.; Wu, Peng

    2018-05-15

    A Multi-Petascale Highly Efficient Parallel Supercomputer of 100 petaflop-scale includes node architectures based upon System-On-a-Chip technology, where each processing node comprises a single Application Specific Integrated Circuit (ASIC). The ASIC nodes are interconnected by a five dimensional torus network that optimally maximize the throughput of packet communications between nodes and minimize latency. The network implements collective network and a global asynchronous network that provides global barrier and notification functions. Integrated in the node design include a list-based prefetcher. The memory system implements transaction memory, thread level speculation, and multiversioning cache that improves soft error rate at the same time and supports DMA functionality allowing for parallel processing message-passing.

  20. The CRRES high efficiency solar panel

    International Nuclear Information System (INIS)

    Trumble, T.M.

    1991-01-01

    This paper reports on the High Efficiency Solar Panel (HESP) experiments which is to provide both engineering and scientific information concerning the effects of space radiation on advanced gallium arsenide (GaAs) solar cells. The HESP experiment consists of an ambient panel, and annealing panel and a programmable load. This experiment, in conjunction with the radiation measurement experiments abroad the CREES, provides the first opportunity to simultaneously measure the trapped radiation belts and the results of radiation damage to solar cells. The engineering information will result in a design guide for selecting the optimum solar array characteristics for different orbits and different lifetimes. The scientific information will provide both correlation of laboratory damage effects to space damage effects and a better model for predicting effective solar cell panel lifetimes

  1. All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2015-03-01

    Full Text Available We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.

  2. All-perovskite transparent high mobility field effect using epitaxial BaSnO{sub 3} and LaInO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Useong; Park, Chulkwon; Kim, Young Mo; Ju, Chanjong; Park, Jisung; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Namwook; Yu, Jaejun [Center for Theoretical Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2015-03-01

    We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO{sub 3} and LaInO{sub 3}. We have developed epitaxial LaInO{sub 3} as the gate oxide on top of BaSnO{sub 3}, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO{sub 3} films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO{sub 3} as a gate dielectric and the La-doped BaSnO{sub 3} as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm{sup 2} V{sup −1} s{sup −1}, the on/off ratio was larger than 10{sup 7}, and the subthreshold swing was 0.65 V dec{sup −1}. We discuss the possible origins for such device performance and the future directions for further improvement.

  3. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra

    2017-08-24

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  4. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra; Kumar, Ravi; Ganguli, Tapas; Major, Syed S

    2017-01-01

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  5. Zerodur polishing process for high surface quality and high efficiency

    International Nuclear Information System (INIS)

    Tesar, A.; Fuchs, B.

    1992-08-01

    Zerodur is a glass-ceramic composite importance in applications where temperature instabilities influence optical and mechanical performance, such as in earthbound and spaceborne telescope mirror substrates. Polished Zerodur surfaces of high quality have been required for laser gyro mirrors. Polished surface quality of substrates affects performance of high reflection coatings. Thus, the interest in improving Zerodur polished surface quality has become more general. Beyond eliminating subsurface damage, high quality surfaces are produced by reducing the amount of hydrated material redeposited on the surface during polishing. With the proper control of polishing parameters, such surfaces exhibit roughnesses of < l Angstrom rms. Zerodur polishing was studied to recommend a high surface quality polishing process which could be easily adapted to standard planetary continuous polishing machines and spindles. This summary contains information on a polishing process developed at LLNL which reproducibly provides high quality polished Zerodur surfaces at very high polishing efficiencies

  6. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Krishna C.; Muzykov, Peter G. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States); Russell Terry, J. [Space Science and Applications Group (ISR-1), Intelligence and Space Research Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-07-30

    Schottky diodes on n-type 4H-SiC epitaxial layers have been fabricated for low-energy x-ray detection. The detectors were highly sensitive to soft x-rays and showed improved response compared to the commercial SiC UV photodiodes. Current-voltage characteristics at 475 K showed low leakage current revealing the possibility of high temperature operation. The high quality of the epi-layer was confirmed by x-ray diffraction and chemical etching. Thermally stimulated current measurements performed at 94-550 K revealed low density of deep levels which may cause charge trapping. No charge trapping on detectors' responsivity in the low x-ray energy was found.

  7. Highly efficient red electrophosphorescent devices at high current densities

    International Nuclear Information System (INIS)

    Wu Youzhi; Zhu Wenqing; Zheng Xinyou; Sun, Runguang; Jiang Xueyin; Zhang Zhilin; Xu Shaohong

    2007-01-01

    Efficiency decrease at high current densities in red electrophosphorescent devices is drastically restrained compared with that from conventional electrophosphorescent devices by using bis(2-methyl-8-quinolinato)4-phenylphenolate aluminum (BAlq) as a hole and exciton blocker. Ir complex, bis(2-(2'-benzo[4,5-α]thienyl) pyridinato-N,C 3' ) iridium (acetyl-acetonate) is used as an emitter, maximum external quantum efficiency (QE) of 7.0% and luminance of 10000cd/m 2 are obtained. The QE is still as high as 4.1% at higher current density J=100mA/cm 2 . CIE-1931 co-ordinates are 0.672, 0.321. A carrier trapping mechanism is revealed to dominate in the process of electroluminescence

  8. White LED with High Package Extraction Efficiency

    International Nuclear Information System (INIS)

    Yi Zheng; Stough, Matthew

    2008-01-01

    The goal of this project is to develop a high efficiency phosphor converting (white) Light Emitting Diode (pcLED) 1-Watt package through an increase in package extraction efficiency. A transparent/translucent monolithic phosphor is proposed to replace the powdered phosphor to reduce the scattering caused by phosphor particles. Additionally, a multi-layer thin film selectively reflecting filter is proposed between blue LED die and phosphor layer to recover inward yellow emission. At the end of the project we expect to recycle approximately 50% of the unrecovered backward light in current package construction, and develop a pcLED device with 80 lm/W e using our technology improvements and commercially available chip/package source. The success of the project will benefit luminous efficacy of white LEDs by increasing package extraction efficiency. In most phosphor-converting white LEDs, the white color is obtained by combining a blue LED die (or chip) with a powdered phosphor layer. The phosphor partially absorbs the blue light from the LED die and converts it into a broad green-yellow emission. The mixture of the transmitted blue light and green-yellow light emerging gives white light. There are two major drawbacks for current pcLEDs in terms of package extraction efficiency. The first is light scattering caused by phosphor particles. When the blue photons from the chip strike the phosphor particles, some blue light will be scattered by phosphor particles. Converted yellow emission photons are also scattered. A portion of scattered light is in the backward direction toward the die. The amount of this backward light varies and depends in part on the particle size of phosphors. The other drawback is that yellow emission from phosphor powders is isotropic. Although some backward light can be recovered by the reflector in current LED packages, there is still a portion of backward light that will be absorbed inside the package and further converted to heat. Heat generated

  9. Tailored Materials for High Efficiency CIDI Engines

    Energy Technology Data Exchange (ETDEWEB)

    Grant, G.J.; Jana, S.

    2012-03-30

    The overall goal of the project, Tailored Materials for High Efficiency Compression Ignition Direct Injection (CIDI) Engines, is to enable the implementation of new combustion strategies, such as homogeneous charge compression ignition (HCCI), that have the potential to significantly increase the energy efficiency of current diesel engines and decrease fuel consumption and environmental emissions. These strategies, however, are increasing the demands on conventional engine materials, either from increases in peak cylinder pressure (PCP) or from increases in the temperature of operation. The specific objective of this project is to investigate the application of a new material processing technology, friction stir processing (FSP), to improve the thermal and mechanical properties of engine components. The concept is to modify the surfaces of conventional, low-cost engine materials. The project focused primarily on FSP in aluminum materials that are compositional analogs to the typical piston and head alloys seen in small- to mid-sized CIDI engines. Investigations have been primarily of two types over the duration of this project: (1) FSP of a cast hypoeutectic Al-Si-Mg (A356/357) alloy with no introduction of any new components, and (2) FSP of Al-Cu-Ni alloys (Alloy 339) by physically stirring-in various quantities of carbon nanotubes/nanofibers or carbon fibers. Experimental work to date on aluminum systems has shown significant increases in fatigue lifetime and stress-level performance in aluminum-silicon alloys using friction processing alone, but work to demonstrate the addition of carbon nanotubes and fibers into aluminum substrates has shown mixed results due primarily to the difficulty in achieving porosity-free, homogeneous distributions of the particulate. A limited effort to understand the effects of FSP on steel materials was also undertaken during the course of this project. Processed regions were created in high-strength, low-alloyed steels up to 0.5 in

  10. High efficiency diffusion molecular retention tumor targeting.

    Directory of Open Access Journals (Sweden)

    Yanyan Guo

    Full Text Available Here we introduce diffusion molecular retention (DMR tumor targeting, a technique that employs PEG-fluorochrome shielded probes that, after a peritumoral (PT injection, undergo slow vascular uptake and extensive interstitial diffusion, with tumor retention only through integrin molecular recognition. To demonstrate DMR, RGD (integrin binding and RAD (control probes were synthesized bearing DOTA (for (111 In(3+, a NIR fluorochrome, and 5 kDa PEG that endows probes with a protein-like volume of 25 kDa and decreases non-specific interactions. With a GFP-BT-20 breast carcinoma model, tumor targeting by the DMR or i.v. methods was assessed by surface fluorescence, biodistribution of [(111In] RGD and [(111In] RAD probes, and whole animal SPECT. After a PT injection, both probes rapidly diffused through the normal and tumor interstitium, with retention of the RGD probe due to integrin interactions. With PT injection and the [(111In] RGD probe, SPECT indicated a highly tumor specific uptake at 24 h post injection, with 352%ID/g tumor obtained by DMR (vs 4.14%ID/g by i.v.. The high efficiency molecular targeting of DMR employed low probe doses (e.g. 25 ng as RGD peptide, which minimizes toxicity risks and facilitates clinical translation. DMR applications include the delivery of fluorochromes for intraoperative tumor margin delineation, the delivery of radioisotopes (e.g. toxic, short range alpha emitters for radiotherapy, or the delivery of photosensitizers to tumors accessible to light.

  11. High collection efficiency CVD diamond alpha detectors

    International Nuclear Information System (INIS)

    Bergonzo, P.; Foulon, F.; Marshall, R.D.; Jany, C.; Brambilla, A.; McKeag, R.D.; Jackman, R.B.

    1998-01-01

    Advances in Chemical Vapor Deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its unique combination of physical properties (low temperature susceptibility (> 500 C), high resistance to radiation damage (> 100 Mrad) and to corrosive media). A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties with respect to those measured on monocrystalline diamond. The authors report the optimization of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimizing the device geometry, they show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used

  12. Quantum Nanostructures by Droplet Epitaxy

    OpenAIRE

    Somsak Panyakeow

    2009-01-01

    Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

  13. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  14. Performance of a high efficiency high power UHF klystron

    International Nuclear Information System (INIS)

    Konrad, G.T.

    1977-03-01

    A 500 kW c-w klystron was designed for the PEP storage ring at SLAC. The tube operates at 353.2 MHz, 62 kV, a microperveance of 0.75, and a gain of approximately 50 dB. Stable operation is required for a VSWR as high as 2 : 1 at any phase angle. The design efficiency is 70%. To obtain this value of efficiency, a second harmonic cavity is used in order to produce a very tightly bunched beam in the output gap. At the present time it is planned to install 12 such klystrons in PEP. A tube with a reduced size collector was operated at 4% duty at 500 kW. An efficiency of 63% was observed. The same tube was operated up to 200 kW c-w for PEP accelerator cavity tests. A full-scale c-w tube reached 500 kW at 65 kV with an efficiency of 55%. In addition to power and phase measurements into a matched load, some data at various load mismatches are presented

  15. High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, C.Y.; Yoon, S.F.; Sun, Z.Z.; Yew, K.C.

    2006-01-01

    Self-assembled GaInNAs/GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm 2 from a GaInNAs QD laser (50x1700 μm 2 ) at 10 deg. C. High-temperature operation up to 65 deg. C was also demonstrated from an unbonded GaInNAs QD laser (50x1060 μm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60 deg. C

  16. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  17. Series-Tuned High Efficiency RF-Power Amplifiers

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  18. High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

    International Nuclear Information System (INIS)

    Zide, J. M. O.; Bahk, J.-H.; Zeng, G.; Bowers, J. E.; Singh, R.; Zebarjadi, M.; Bian, Z. X.; Shakouri, A.; Lu, H.; Gossard, A. C.; Feser, J. P.; Xu, D.; Singer, S. L.; Majumdar, A.

    2010-01-01

    Rare-earth impurities in III-V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In 0.53 Ga 0.47-X Al X As allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT=1.33 at 800 K.

  19. Multi-petascale highly efficient parallel supercomputer

    Science.gov (United States)

    Asaad, Sameh; Bellofatto, Ralph E.; Blocksome, Michael A.; Blumrich, Matthias A.; Boyle, Peter; Brunheroto, Jose R.; Chen, Dong; Cher, Chen -Yong; Chiu, George L.; Christ, Norman; Coteus, Paul W.; Davis, Kristan D.; Dozsa, Gabor J.; Eichenberger, Alexandre E.; Eisley, Noel A.; Ellavsky, Matthew R.; Evans, Kahn C.; Fleischer, Bruce M.; Fox, Thomas W.; Gara, Alan; Giampapa, Mark E.; Gooding, Thomas M.; Gschwind, Michael K.; Gunnels, John A.; Hall, Shawn A.; Haring, Rudolf A.; Heidelberger, Philip; Inglett, Todd A.; Knudson, Brant L.; Kopcsay, Gerard V.; Kumar, Sameer; Mamidala, Amith R.; Marcella, James A.; Megerian, Mark G.; Miller, Douglas R.; Miller, Samuel J.; Muff, Adam J.; Mundy, Michael B.; O'Brien, John K.; O'Brien, Kathryn M.; Ohmacht, Martin; Parker, Jeffrey J.; Poole, Ruth J.; Ratterman, Joseph D.; Salapura, Valentina; Satterfield, David L.; Senger, Robert M.; Smith, Brian; Steinmacher-Burow, Burkhard; Stockdell, William M.; Stunkel, Craig B.; Sugavanam, Krishnan; Sugawara, Yutaka; Takken, Todd E.; Trager, Barry M.; Van Oosten, James L.; Wait, Charles D.; Walkup, Robert E.; Watson, Alfred T.; Wisniewski, Robert W.; Wu, Peng

    2015-07-14

    A Multi-Petascale Highly Efficient Parallel Supercomputer of 100 petaOPS-scale computing, at decreased cost, power and footprint, and that allows for a maximum packaging density of processing nodes from an interconnect point of view. The Supercomputer exploits technological advances in VLSI that enables a computing model where many processors can be integrated into a single Application Specific Integrated Circuit (ASIC). Each ASIC computing node comprises a system-on-chip ASIC utilizing four or more processors integrated into one die, with each having full access to all system resources and enabling adaptive partitioning of the processors to functions such as compute or messaging I/O on an application by application basis, and preferably, enable adaptive partitioning of functions in accordance with various algorithmic phases within an application, or if I/O or other processors are underutilized, then can participate in computation or communication nodes are interconnected by a five dimensional torus network with DMA that optimally maximize the throughput of packet communications between nodes and minimize latency.

  20. Energy Efficient Graphene Based High Performance Capacitors.

    Science.gov (United States)

    Bae, Joonwon; Kwon, Oh Seok; Lee, Chang-Soo

    2017-07-10

    Graphene (GRP) is an interesting class of nano-structured electronic materials for various cutting-edge applications. To date, extensive research activities have been performed on the investigation of diverse properties of GRP. The incorporation of this elegant material can be very lucrative in terms of practical applications in energy storage/conversion systems. Among various those systems, high performance electrochemical capacitors (ECs) have become popular due to the recent need for energy efficient and portable devices. Therefore, in this article, the application of GRP for capacitors is described succinctly. In particular, a concise summary on the previous research activities regarding GRP based capacitors is also covered extensively. It was revealed that a lot of secondary materials such as polymers and metal oxides have been introduced to improve the performance. Also, diverse devices have been combined with capacitors for better use. More importantly, recent patents related to the preparation and application of GRP based capacitors are also introduced briefly. This article can provide essential information for future study. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  1. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  2. A novel high efficiency solar photovoltalic pump

    NARCIS (Netherlands)

    Diepens, J.F.L.; Smulders, P.T.; Vries, de D.A.

    1993-01-01

    The daily average overall efficiency of a solar pump system is not only influenced by the maximum efficiency of the components of the system, but just as much by the correct matching of the components to the local irradiation pattern. Normally centrifugal pumps are used in solar pump systems. The

  3. Strain-Modulated Epitaxy

    National Research Council Canada - National Science Library

    Brown, April

    1999-01-01

    Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors...

  4. High efficiency targets for high gain inertial confinement fusion

    International Nuclear Information System (INIS)

    Gardner, J.H.; Bodner, S.E.

    1986-01-01

    Rocket efficiencies as high as 15% are possible using short wavelength lasers and moderately high aspect ratio pellet designs. These designs are made possible by two recent breakthroughs in physics constraints. First is the development of the Induced Spatial Incoherence (ISI) technique which allows uniform illumination of the pellet and relaxes the constraint of thermal smoothing, permitting the use of short wavelength laser light. Second is the discovery that the Rayleigh-Taylor growth rate is considerably reduced at the short laser wavelengths. By taking advantage of the reduced constraints imposed by nonuniform laser illumination and Rayleigh-Taylor instability, pellets using 1/4 micron laser light and initial aspect ratios of about 10 (with in flight aspect ratios of about 150 to 200) may produce energy gains as high as 200 to 250

  5. High power klystrons for efficient reliable high power amplifiers

    Science.gov (United States)

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  6. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  7. Physical-chemical and technological aspects of the preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O by method of metal organic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Stejskal, J.; Nevriva, M.; Leitner, J.

    1995-01-01

    The method of metal organic vapour phase epitaxy (MO VPE) was used for preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O. The suitable chemical precursors (β-diketonates) on the literature data and of the own thermodynamic calculations were selected. The optimal thermodynamic data and thermodynamic stability of the prepared samples were determined

  8. High efficiency quasi-monochromatic infrared emitter

    Energy Technology Data Exchange (ETDEWEB)

    Brucoli, Giovanni; Besbes, Mondher; Benisty, Henri, E-mail: henri.benisty@institutoptique.fr; Greffet, Jean-Jacques [Laboratoire Charles Fabry, UMR 8501, Institut d’Optique, CNRS, Université Paris-Sud 11, 2, Avenue Augustin Fresnel, 91127 Palaiseau Cedex (France); Bouchon, Patrick; Haïdar, Riad [Office National d’Études et de Recherches Aérospatiales, Chemin de la Hunière, 91761 Palaiseau (France)

    2014-02-24

    Incandescent radiation sources are widely used as mid-infrared emitters owing to the lack of alternative for compact and low cost sources. A drawback of miniature hot systems such as membranes is their low efficiency, e.g., for battery powered systems. For targeted narrow-band applications such as gas spectroscopy, the efficiency is even lower. In this paper, we introduce design rules valid for very generic membranes demonstrating that their energy efficiency for use as incandescent infrared sources can be increased by two orders of magnitude.

  9. Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

    International Nuclear Information System (INIS)

    Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

    1991-01-01

    Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

  10. Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Capezzuto, P.; Bruno, G. [Plasmachemistry Research Center, CNR, Bari (Italy); Namkoong, G.; Doolittle, W.A.; Brown, A.S. [Georgia Inst. of Tech., Atlanta (United States). School of Electrical and Computer Engineering, Microelectronic Research Center

    2002-03-16

    GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by both radio-frequency (rf) remote plasma metalorganic chemical vapor deposition (RP-MOCVD) and molecular beam epitaxy (MBE). A multistep growth process including substrate plasma cleaning and nitridation, buffer growth, its subsequent annealing and epilayer growth was used. In order to achieve a better understanding of the GaN growth, in-situ real time investigation of the surface chemistry is performed for all the steps using the conventional reflection high-energy electron spectroscopy (RHEED) during the MBE process, while laser reflectance interferometry (LRI) and spectroscopic ellipsometry (SE), which do not require UHV conditions, are used for the monitoring of the RP-MOCVD process. The chemistry of the rf N{sub 2} plasma sapphire nitridation and its effect on the epilayer growth and quality are discussed in both MBE and RP-MOCVD. (orig.)

  11. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

    Science.gov (United States)

    Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

    2017-12-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

  12. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

    2004-01-01

    A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

  13. Energy efficiency of high-rise buildings

    Science.gov (United States)

    Zhigulina, Anna Yu.; Ponomarenko, Alla M.

    2018-03-01

    The article is devoted to analysis of tendencies and advanced technologies in the field of energy supply and energy efficiency of tall buildings, to the history of the emergence of the concept of "efficiency" and its current interpretation. Also the article show the difference of evaluation criteria of the leading rating systems LEED and BREEAM. Authors reviewed the latest technologies applied in the construction of energy efficient buildings. Methodological approach to the design of tall buildings taking into account energy efficiency needs to include the primary energy saving; to seek the possibility of production and accumulation of alternative electric energy by converting energy from the sun and wind with the help of special technical devices; the application of regenerative technologies.

  14. High Efficiency Refrigeration Process, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — It has been proposed by NASA JSC studies, that the most mass efficient (non-nuclear) method of Lunar habitat cooling is via photovoltaic (PV) direct vapor...

  15. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

    Science.gov (United States)

    Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

    2018-05-01

    High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

  16. High Power High Efficiency Diode Laser Stack for Processing

    Science.gov (United States)

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  17. Designing high efficient solar powered lighting systems

    DEFF Research Database (Denmark)

    Poulsen, Peter Behrensdorff; Thorsteinsson, Sune; Lindén, Johannes

    2016-01-01

    Some major challenges in the development of L2L products is the lack of efficient converter electronics, modelling tools for dimensioning and furthermore, characterization facilities to support the successful development of the products. We report the development of 2 Three-Port-Converters respec...

  18. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  19. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  20. Energy efficiency indicators for high electric-load buildings

    Energy Technology Data Exchange (ETDEWEB)

    Aebischer, Bernard; Balmer, Markus A.; Kinney, Satkartar; Le Strat, Pascale; Shibata, Yoshiaki; Varone, Frederic

    2003-06-01

    Energy per unit of floor area is not an adequate indicator for energy efficiency in high electric-load buildings. For two activities, restaurants and computer centres, alternative indicators for energy efficiency are discussed.

  1. Efficient and Highly Aldehyde Selective Wacker Oxidation

    KAUST Repository

    Teo, Peili; Wickens, Zachary K.; Dong, Guangbin; Grubbs, Robert H.

    2012-01-01

    A method for efficient and aldehyde-selective Wacker oxidation of aryl-substituted olefins using PdCl 2(MeCN) 2, 1,4-benzoquinone, and t-BuOH in air is described. Up to a 96% yield of aldehyde can be obtained, and up to 99% selectivity can be achieved with styrene-related substrates. © 2012 American Chemical Society.

  2. Efficient and Highly Aldehyde Selective Wacker Oxidation

    KAUST Repository

    Teo, Peili

    2012-07-06

    A method for efficient and aldehyde-selective Wacker oxidation of aryl-substituted olefins using PdCl 2(MeCN) 2, 1,4-benzoquinone, and t-BuOH in air is described. Up to a 96% yield of aldehyde can be obtained, and up to 99% selectivity can be achieved with styrene-related substrates. © 2012 American Chemical Society.

  3. Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material.

    Science.gov (United States)

    Ramu, Ashok T; Mages, Phillip; Zhang, Chong; Imamura, Jeffrey T; Bowers, John E

    2012-09-01

    The Seebeck coefficient of a typical thermoelectric material, silicon-doped InGaAs lattice-matched to InP, is measured over a temperature range from 300 K to 550 K. By depositing and patterning a thermometric reference bar of silicon-doped InP adjacent to a bar of the material under test, temperature differences are measured directly. This is in contrast to conventional two-thermocouple techniques that subtract two large temperatures to yield a small temperature difference, a procedure prone to errors. The proposed technique retains the simple instrumentation of two-thermocouple techniques while eliminating the critical dependence of the latter on good thermal contact. The repeatability of the proposed technique is demonstrated to be ±2.6% over three temperature sweeps, while the repeatability of two-thermocouple measurements is about ±5%. The improved repeatability is significant for reliable reporting of the ZT figure of merit, which is proportional to the square of the Seebeck coefficient. The accuracy of the proposed technique depends on the accuracy with which the high-temperature Seebeck coefficient of the reference material may be computed or measured. In this work, the Seebeck coefficient of the reference material, n+ InP, is computed by rigorous solution of the Boltzmann transport equation. The accuracy and repeatability of the proposed technique can be systematically improved by scaling, and the method is easily extensible to other material systems currently being investigated for high thermoelectric energy conversion efficiency.

  4. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  5. High efficiency nebulization for helium inductively coupled plasma mass spectrometry

    International Nuclear Information System (INIS)

    Jorabchi, Kaveh; McCormick, Ryan; Levine, Jonathan A.; Liu Huiying; Nam, S.-H.; Montaser, Akbar

    2006-01-01

    A pneumatically-driven, high efficiency nebulizer is explored for helium inductively coupled plasma mass spectrometry. The aerosol characteristics and analyte transport efficiencies of the high efficiency nebulizer for nebulization with helium are measured and compared to the results obtained with argon. Analytical performance indices of the helium inductively coupled plasma mass spectrometry are evaluated in terms of detection limits and precision. The helium inductively coupled plasma mass spectrometry detection limits obtained with the high efficiency nebulizer at 200 μL/min are higher than those achieved with the ultrasonic nebulizer consuming 2 mL/min solution, however, precision is generally better with high efficiency nebulizer (1-4% vs. 3-8% with ultrasonic nebulizer). Detection limits with the high efficiency nebulizer at 200 μL/min solution uptake rate approach those using ultrasonic nebulizer upon efficient desolvation with a heated spray chamber followed by a Peltier-cooled multipass condenser

  6. Recent Advances in High Efficiency Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yoshio; Ohshita; Hidetoshi; Suzuki; Kenichi; Nishimura; Masafumi; Yamaguchi

    2007-01-01

    1 Results The conversion efficiency of sunlight to electricity is limited around 25%,when we use single junction solar cells. In the single junction cells,the major energy losses arise from the spectrum mismatching. When the photons excite carriers with energy well in excess of the bandgap,these excess energies were converted to heat by the rapid thermalization. On the other hand,the light with lower energy than that of the bandgap cannot be absorbed by the semiconductor,resulting in the losses. One way...

  7. High efficiency cyclotron trap assisted positron moderator

    OpenAIRE

    Gerchow, L.; Cooke, D. A.; Braccini, S.; Döbeli, M.; Kirch, K.; Köster, U.; Müller, A.; Van Der Meulen, N. P.; Vermeulen, C.; Rubbia, A.; Crivelli, P.

    2017-01-01

    We report the realisation of a cyclotron trap assisted positron tungsten moderator for the conversion of positrons with a broad keV- few MeV energy spectrum to a mono-energetic eV beam with an efficiency of 1.8(2)% defined as the ratio of the slow positrons divided by the $\\beta^+$ activity of the radioactive source. This is an improvement of almost two orders of magnitude compared to the state of the art of tungsten moderators. The simulation validated with this measurement suggests that usi...

  8. A high-efficiency electromechanical battery

    Science.gov (United States)

    Post, Richard F.; Fowler, T. K.; Post, Stephen F.

    1993-03-01

    In our society there is a growing need for efficient cost-effective means for storing electrical energy. The electric auto is a prime example. Storage systems for the electric utilities, and for wind or solar power, are other examples. While electrochemical cells could in principle supply these needs, the existing E-C batteries have well-known limitations. This article addresses an alternative, the electromechanical battery (EMB). An EMB is a modular unit consisting of an evacuated housing containing a fiber-composite rotor. The rotor is supported by magnetic bearings and contains an integrally mounted permanent magnet array. This article addresses design issues for EMBs with rotors made up of nested cylinders. Issues addressed include rotational stability, stress distributions, generator/motor power and efficiency, power conversion, and cost. It is concluded that the use of EMBs in electric autos could result in a fivefold reduction (relative to the IC engine) in the primary energy input required for urban driving, with a concomitant major positive impact on our economy and on air pollution.

  9. Development of high efficiency neutron detectors

    International Nuclear Information System (INIS)

    Pickrell, M.M.; Menlove, H.O.

    1993-01-01

    The authors have designed a novel neutron detector system using conventional 3 He detector tubes and composites of polyethylene and graphite. At this time the design consists entirely of MCNP simulations of different detector configurations and materials. These detectors are applicable to low-level passive and active neutron assay systems such as the passive add-a-source and the 252 Cf shuffler. Monte Carlo simulations of these neutron detector designs achieved efficiencies of over 35% for assay chambers that can accommodate 55-gal. drums. Only slight increases in the number of detector tubes and helium pressure are required. The detectors also have reduced die-away times. Potential applications are coincident and multiplicity neutron counting for waste disposal and safeguards. The authors will present the general design philosophy, underlying physics, calculation mechanics, and results

  10. High efficient white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

    2007-07-01

    Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

  11. High-Efficient Circuits for Ternary Addition

    Directory of Open Access Journals (Sweden)

    Reza Faghih Mirzaee

    2014-01-01

    Full Text Available New ternary adders, which are fundamental components of ternary addition, are presented in this paper. They are on the basis of a logic style which mostly generates binary signals. Therefore, static power dissipation reaches its minimum extent. Extensive different analyses are carried out to examine how efficient the new designs are. For instance, the ternary ripple adder constructed by the proposed ternary half and full adders consumes 2.33 μW less power than the one implemented by the previous adder cells. It is almost twice faster as well. Due to their unique superior characteristics for ternary circuitry, carbon nanotube field-effect transistors are used to form the novel circuits, which are entirely suitable for practical applications.

  12. A high-efficiency superconductor distributed amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Herr, Q P, E-mail: quentin.herr@ngc.co [Northrop Grumman Corporation, 7323 Aviation Boulevard, Baltimore, MD 21240 (United States)

    2010-02-15

    A superconductor output amplifier that converts single-flux-quantum signals to a non-return-to-zero pattern is reported using a twelve-stage distributed amplifier configuration. The output amplitude is measured to be 1.75 mV over a wide bias current range of {+-} 12%. The bit error rate is measured using a Delta-Sigma data pattern to be less than 1 x 10{sup -9} at 10 Gb s{sup -1} per channel. Analysis of the eye diagram suggests that the actual bit error rate may be much lower. The amplifier has power efficiency of 12% neglecting the termination resistor, which may be eliminated from the circuit with a small modification. (rapid communication)

  13. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    International Nuclear Information System (INIS)

    Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2009-01-01

    We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

  14. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  15. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

    2009-01-01

    The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

  16. High Efficiency Regenerative Helium Compressor, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Helium plays several critical rolls in spacecraft propulsion. High pressure helium is commonly used to pressurize propellant fuel tanks. Helium cryocoolers can be...

  17. Highly Efficient, Durable Regenerative Solid Oxide Stack, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Precision Combustion, Inc. (PCI) proposes to develop a highly efficient regenerative solid oxide stack design. Novel structural elements allow direct internal...

  18. High-efficiency airfoil rudders applied to submarines

    Directory of Open Access Journals (Sweden)

    ZHOU Yimei

    2017-03-01

    Full Text Available Modern submarine design puts forward higher and higher requirements for control surfaces, and this creates a requirement for designers to constantly innovate new types of rudder so as to improve the efficiency of control surfaces. Adopting the high-efficiency airfoil rudder is one of the most effective measures for improving the efficiency of control surfaces. In this paper, we put forward an optimization method for a high-efficiency airfoil rudder on the basis of a comparative analysis of the various strengths and weaknesses of the airfoil, and the numerical calculation method is adopted to analyze the influence rule of the hydrodynamic characteristics and wake field by using the high-efficiency airfoil rudder and the conventional NACA rudder comparatively; at the same time, a model load test in a towing tank was carried out, and the test results and simulation calculation obtained good consistency:the error between them was less than 10%. The experimental results show that the steerage of a high-efficiency airfoil rudder is increased by more than 40% when compared with the conventional rudder, but the total resistance is close:the error is no more than 4%. Adopting a high-efficiency airfoil rudder brings much greater lifting efficiency than the total resistance of the boat. The results show that high-efficiency airfoil rudder has obvious advantages for improving the efficiency of control, giving it good application prospects.

  19. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  20. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-01-28

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

  1. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

    2010-01-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  2. Structural characterization of epitaxial YBa2Cu3O7 thin films on step-edge substrates by means of high-resolution electron microscopy

    International Nuclear Information System (INIS)

    Jia, C.L.; Kabius, B.; Urban, K.

    1993-01-01

    The microstructure of YBa 2 Cu 3 O 7 films epitaxially grown on step-edge (0 0 1) SrTiO 3 and LaAlO 3 substrates has been characterized by means of high-resolution electron microscopy. The results indicate a relationship between the microstructure of the film across a step and the angle the step makes with the substrate plane. On a steep, high-angle step, the film grows with its c-axis perpendicular to that of the film on substrate surface so that two grain boundaries are formed. In the upper grain boundary, on the average, a (0 1 3) habit plane alternates with a (1 0 3) habit plane. This alternating structure is caused by twinning in the orthorhombic structure. The lower boundaries consist of a chain of (0 1 3)(0 1 3) and (0 1 0)(0 0 1) type segments exhibiting a tendency to tilt the whole habit plane toward the a-b plane of the flank film. Dislocations, stacking faults and misfit strains were also observed in or close to the boundaries. (orig.)

  3. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Elleuch, Omar; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-01-01

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor

  4. Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

    2009-01-01

    Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

  5. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

    Directory of Open Access Journals (Sweden)

    Yoon SF

    2006-01-01

    Full Text Available AbstractSelf-assembled GaInNAs quantum dots (QDs were grown on GaAs (001 substrate using solid-source molecular-beam epitaxy (SSMBE equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM, photoluminescence (PL, and transmission electron microscopy (TEM measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW operation at room temperature (RT with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2 at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2, with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

  6. High Efficiency, High Density Terrestrial Panel. [for solar cell modules

    Science.gov (United States)

    Wohlgemuth, J.; Wihl, M.; Rosenfield, T.

    1979-01-01

    Terrestrial panels were fabricated using rectangular cells. Packing densities in excess of 90% with panel conversion efficiencies greater than 13% were obtained. Higher density panels can be produced on a cost competitive basis with the standard salami panels.

  7. 40 CFR 761.71 - High efficiency boilers.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false High efficiency boilers. 761.71... PROHIBITIONS Storage and Disposal § 761.71 High efficiency boilers. (a) To burn mineral oil dielectric fluid containing a PCB concentration of ≥50 ppm, but boiler shall comply with the following...

  8. HIGH EFFICIENCY DESULFURIZATION OF SYNTHESIS GAS

    Energy Technology Data Exchange (ETDEWEB)

    Anirban Mukherjee; Kwang-Bok Yi; Elizabeth J. Podlaha; Douglas P. Harrison

    2001-11-01

    Mixed metal oxides containing CeO{sub 2} and ZrO{sub 2} are being studied as high temperature desulfurization sorbents capable of achieving the DOE Vision 21 target of 1 ppmv of less H{sub 2}S. The research is justified by recent results in this laboratory that showed that reduced CeO{sub 2}, designated CeO{sub n} (1.5 < n < 2.0), is capable of achieving the 1 ppmv target in highly reducing gas atmospheres. The addition of ZrO{sub 2} has improved the performance of oxidation catalysts and three-way automotive catalysts containing CeO{sub 2}, and should have similar beneficial effects on CeO{sub 2} desulfurization sorbents. An electrochemical method for synthesizing CeO{sub 2}-ZrO{sub 2} has been developed and the products have been characterized by XRD and TEM during year 01. Nanocrystalline particles having a diameter of about 5 nm and containing from approximately 10 mol% to 80 mol% ZrO{sub 2} have been prepared. XRD showed the product to be a solid solution at low ZrO{sub 2} contents with a separate ZrO{sub 2} phase emerging at higher ZrO{sub 2} levels. Phase separation did not occur when the solid solutions were heat treated at 700 C. A flow reactor system constructed of quartz and teflon has been constructed, and a gas chromatograph equipped with a pulsed flame photometric detector (PFPD) suitable for measuring sub-ppmv levels of H{sub 2}S has been purchased with LSU matching funds. Preliminary desulfurization tests using commercial CeO{sub 2} and CeO{sub 2}-ZrO{sub 2} in highly reducing gas compositions has confirmed that CeO{sub 2}-ZrO{sub 2} is more effective than CeO{sub 2} in removing H{sub 2}S. At 700 C the product H{sub 2}S concentration using CeO{sub 2}-ZrO{sub 2} sorbent was near the 0.1 ppmv PFPD detection limit during the prebreakthrough period.

  9. Highly efficient induction of chirality in intramolecular

    Science.gov (United States)

    Cossio; Arrieta; Lecea; Alajarin; Vidal; Tovar

    2000-06-16

    Highly stereocontrolled, intramolecular [2 + 2] cycloadditions between ketenimines and imines leading to 1,2-dihydroazeto[2, 1-b]quinazolines have been achieved. The source of stereocontrol is a chiral carbon atom adjacent either to the iminic carbon or nitrogen atom. In the first case, the stereocontrol stems from the preference for the axial conformer in the first transition structure. In the second case, the origin of the stereocontrol lies on the two-electron stabilizing interaction between the C-C bond being formed and the sigma orbital corresponding to the polar C-X bond, X being an electronegative atom. These models can be extended to other related systems for predicting the stereochemical outcome in this intramolecular reaction.

  10. High Efficiency, Low Cost Scintillators for PET

    International Nuclear Information System (INIS)

    Kanai Shah

    2007-01-01

    Inorganic scintillation detectors coupled to PMTs are an important element of medical imaging applications such as positron emission tomography (PET). Performance as well as cost of these systems is limited by the properties of the scintillation detectors available at present. The Phase I project was aimed at demonstrating the feasibility of producing high performance scintillators using a low cost fabrication approach. Samples of these scintillators were produced and their performance was evaluated. Overall, the Phase I effort was very successful. The Phase II project will be aimed at advancing the new scintillation technology for PET. Large samples of the new scintillators will be produced and their performance will be evaluated. PET modules based on the new scintillators will also be built and characterized

  11. Compact and highly efficient laser pump cavity

    Science.gov (United States)

    Chang, Jim J.; Bass, Isaac L.; Zapata, Luis E.

    1999-01-01

    A new, compact, side-pumped laser pump cavity design which uses non-conventional optics for injection of laser-diode light into a laser pump chamber includes a plurality of elongated light concentration channels. In one embodiment, the light concentration channels are compound parabolic concentrators (CPC) which have very small exit apertures so that light will not escape from the pumping chamber and will be multiply reflected through the laser rod. This new design effectively traps the pump radiation inside the pump chamber that encloses the laser rod. It enables more uniform laser pumping and highly effective recycle of pump radiation, leading to significantly improved laser performance. This new design also effectively widens the acceptable radiation wavelength of the diodes, resulting in a more reliable laser performance with lower cost.

  12. High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Hisao; Wang, Hong-Xing; Sato, Daisuke; Takaki, Ryohei; Wada, Naoki; Tanahashi, Tetsuya; Yamashita, Kenji; Kawano, Shunsuke; Mizobuchi, Takashi; Dempo, Akihiko; Morioka, Kenji; Kimura, Masahiro; Nohda, Suguru [Nitride Semiconductors Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan); Sugahara, Tomoya [Satellite Venture Business Laboratory, The University of Tokushima (Japan); Sakai, Shiro [Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan)

    2003-11-01

    High performance LEDs emitting in the wavelength range 360-380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

    CERN Document Server

    Senyukov, Serhiy; Besson, Auguste; Claus, Gilles; Cousin, Loic; Dorokhov, Andrei; Dulinski, Wojciech; Goffe, Mathieu; Hu-Guo, Christine; Winter, Marc

    2013-01-01

    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJa...

  14. High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

    Science.gov (United States)

    Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

    2010-05-01

    The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

  15. HIGH EFFICIENCY DESULFURIZATION OF SYNTHESIS GAS

    Energy Technology Data Exchange (ETDEWEB)

    Kwang-Bok Yi; Anirban Mukherjee; Elizabeth J. Podlaha; Douglas P. Harrison

    2004-03-01

    Mixed metal oxides containing ceria and zirconia have been studied as high temperature desulfurization sorbents with the objective of achieving the DOE Vision 21 target of 1 ppmv or less H{sub 2}S in the product gas. The research was justified by recent results in this laboratory that showed that reduced CeO{sub 2}, designated CeOn (1.5 < n < 2.0), is capable of achieving the 1 ppmv target in highly reducing gas atmospheres. The addition of ZrO{sub 2} has improved the performance of oxidation catalysts and three-way automotive catalysts containing CeO{sub 2}, and was postulated to have similar beneficial effects on CeO{sub 2} desulfurization sorbents. An electrochemical method for synthesizing CeO{sub 2}-ZrO{sub 2} mixtures was developed and the products were characterized by XRD and TEM during year 01. Nanocrystalline particles having a diameter of about 5 nm and containing from approximately 10 mol% to 80 mol% ZrO{sub 2} were prepared. XRD analysis showed the product to be a solid solution at low ZrO{sub 2} contents with a separate ZrO{sub 2} phase emerging at higher ZrO{sub 2} levels. Unfortunately, the quantity of CeO{sub 2}-ZrO{sub 2} that could be prepared electrochemically was too small to permit desulfurization testing. Also during year 01 a laboratory-scale fixed-bed reactor was constructed for desulfurization testing. All components of the reactor and analytical systems that were exposed to low concentrations of H{sub 2}S were constructed of quartz, Teflon, or silcosteel. Reactor product gas composition as a function of time was determined using a Varian 3800 gas chromatograph equipped with a pulsed flame photometric detector (PFPD) for measuring low H{sub 2}S concentrations from approximately 0.1 to 10 ppmv, and a thermal conductivity detector (TCD) for higher concentrations of H{sub 2}S. Larger quantities of CeO{sub 2}-ZrO{sub 2} mixtures from other sources, including mixtures prepared in this laboratory using a coprecipitation procedure, were obtained

  16. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Oubei, Hassan M.; Alias, Mohd Sharizal; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

    2016-01-01

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  17. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao

    2016-01-25

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  18. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

    Science.gov (United States)

    He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

    2017-12-13

    It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

  19. Novel materials for high-efficiency solar cells

    Science.gov (United States)

    Kojima, Nobuaki; Natori, Masato; Suzuki, Hidetoshi; Inagaki, Makoto; Ohshita, Yoshio; Yamaguchi, Masafumi

    2009-08-01

    Our Toyota Technological Institute group has investigated various novel materials for solar cells from organic to III-V compound materials. In this paper, we report our recent results in conductivity control of C60 thin films by metal-doping for organic solar cells, and mobility improvement of (In)GaAsN compounds for III-V tandem solar cells. The epitaxial growth of Mg-doped C60 films was attempted. It was found that the epitaxial growth of Mg-doped C60 film was enabled by using mica (001) substrate in the low Mg concentration region (Mg/C60 molar ratio defects leads this improvement.

  20. All passive architecture for high efficiency cascaded Raman conversion

    Science.gov (United States)

    Balaswamy, V.; Arun, S.; Chayran, G.; Supradeepa, V. R.

    2018-02-01

    Cascaded Raman fiber lasers have offered a convenient method to obtain scalable, high-power sources at various wavelength regions inaccessible with rare-earth doped fiber lasers. A limitation previously was the reduced efficiency of these lasers. Recently, new architectures have been proposed to enhance efficiency, but this came at the cost of enhanced complexity, requiring an additional low-power, cascaded Raman laser. In this work, we overcome this with a new, all-passive architecture for high-efficiency cascaded Raman conversion. We demonstrate our architecture with a fifth-order cascaded Raman converter from 1117nm to 1480nm with output power of ~64W and efficiency of 60%.

  1. Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

    2001-01-01

    Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

  2. Stabilization void-fill encapsulation high-efficiency particulate filters

    International Nuclear Information System (INIS)

    Alexander, R.G.; Stewart, W.E.; Phillips, S.J.; Serkowski, M.M.; England, J.L.; Boynton, H.C.

    1994-05-01

    This report discusses high-efficiency particulate air (HEPA) filter systems that which are contaminated with radionuclides are part of the nuclear fuel processing systems conducted by the US Department of Energy (DOE) and require replacement and safe and efficient disposal for plant safety. Two K-3 HEPA filters were removed from service, placed burial boxes, buried, and safely and efficiently stabilized remotely which reduced radiation exposure to personnel and the environment

  3. Design of High Efficiency Illumination for LED Lighting

    OpenAIRE

    Chang, Yong-Nong; Cheng, Hung-Liang; Kuo, Chih-Ming

    2013-01-01

    A high efficiency illumination for LED street lighting is proposed. For energy saving, this paper uses Class-E resonant inverter as main electric circuit to improve efficiency. In addition, single dimming control has the best efficiency, simplest control scheme and lowest circuit cost among other types of dimming techniques. Multiple serial-connected transformers used to drive the LED strings as they can provide galvanic isolation and have the advantage of good current distribution against de...

  4. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  5. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  6. N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

    Science.gov (United States)

    Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

    2015-12-09

    Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

  7. Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-01-01

    Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

  8. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  9. Epitaxial Graphene: A New Material for Electronics

    Science.gov (United States)

    de Heer, Walt A.

    2007-10-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

  10. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  11. The Energy Efficiency of High Intensity Proton Driver Concepts

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, Vyacheslav [Fermilab; Grillenberger, Joachim [PSI, Villigen; Kim, Sang-Ho [ORNL, Oak Ridge (main); Seidel, Mike [PSI, Villigen; Yoshii, Masahito [JAEA, Ibaraki

    2017-05-01

    For MW class proton driver accelerators the energy efficiency is an important aspect; the talk reviews the efficiency of different accelerator concepts including s.c./n.c. linac, rapid cycling synchrotron, cyclotron; the potential of these concepts for very high beam power is discussed.

  12. High Efficiency Lighting with Integrated Adaptive Control (HELIAC), Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project is the continued development of the High Efficiency Lighting with Integrated Adaptive Control (HELIAC) system. Solar radiation is not a viable...

  13. High Efficiency Lighting with Integrated Adaptive Control (HELIAC), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation of the proposed project is the development of High Efficiency Lighting with Integrated Adaptive Control (HELIAC) systems to drive plant growth. Solar...

  14. Efficiency of poly-generating high temperature fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Margalef, Pere; Brown, Tim; Brouwer, Jacob; Samuelsen, Scott [National Fuel Cell Research Center (NFCRC), University of California, Irvine, CA 92697-3550 (United States)

    2011-02-15

    High temperature fuel cells can be designed and operated to poly-generate electricity, heat, and useful chemicals (e.g., hydrogen) in a variety of configurations. The highly integrated and synergistic nature of poly-generating high temperature fuel cells, however, precludes a simple definition of efficiency for analysis and comparison of performance to traditional methods. There is a need to develop and define a methodology to calculate each of the co-product efficiencies that is useful for comparative analyses. Methodologies for calculating poly-generation efficiencies are defined and discussed. The methodologies are applied to analysis of a Hydrogen Energy Station (H{sub 2}ES) showing that high conversion efficiency can be achieved for poly-generation of electricity and hydrogen. (author)

  15. An Improved, Highly Efficient Method for the Synthesis of Bisphenols

    Directory of Open Access Journals (Sweden)

    L. S. Patil

    2011-01-01

    Full Text Available An efficient synthesis of bisphenols is described by condensation of substituted phenols with corresponding cyclic ketones in presence of cetyltrimethylammonium chloride and 3-mercaptopropionic acid as a catalyst in extremely high purity and yields.

  16. High Efficiency S-Band 20 Watt Amplifier

    Data.gov (United States)

    National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

  17. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Dorokhov, A., E-mail: Andrei.Dorokhov@IReS.in2p3.f [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Deveaux, M. [Goethe-Universitaet Frankfurt am Main, Senckenberganlage 31, 60325 Frankfurt am Main (Germany); Doziere, G.; Dulinski, W. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Fontaine, J.-C. [Groupe de Recherche en Physique des Hautes Energies (GRPHE), Universite de Haute Alsace, 61, rue Albert Camus, 68093 Mulhouse (France); Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2010-12-11

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10{mu}m pitch device was found to be {approx}10{sup 13}n{sub eq}/cm{sup 2}, while it was only 2x10{sup 12}n{sub eq}/cm{sup 2} for a 20{mu}m pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10{sup 14}) n{sub eq}/cm{sup 2}. This goal relies on a fabrication process featuring a 15{mu}m thin, high resistivity ({approx}1k{Omega}cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages (<5V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of {approx}50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered (3x10{sup 13}n{sub eq}/cm{sup 2}), making evidence of a significant extension of the radiation tolerance limits of MAPS.

  18. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  19. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  20. Process development for high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

    1991-12-31

    Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

  1. Highly efficient procedure for the transesterification of vegetable oil

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Xuezheng; Gao, Shan; He, Mingyuan [Shanghai Key Laboratory of Green Chemistry and Chemical Process, Department of Chemistry, East China Normal University, Shanghai 200062 (China); Yang, Jianguo [Shanghai Key Laboratory of Green Chemistry and Chemical Process, Department of Chemistry, East China Normal University, Shanghai 200062 (China); Energy Institute, Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2009-10-15

    The highly efficient procedure has been developed for the synthesis of biodiesel from vegetable oil and methanol. The KF/MgO has been selected as the most efficient catalyst for the reactions with the yield of 99.3%. Operational simplicity, without need of the purification of raw vegetable oil, low cost of the catalyst used, high activities, no saponification and reusability are the key features of this methodology. (author)

  2. The photonic nanowire: A highly efficient single-photon source

    DEFF Research Database (Denmark)

    Gregersen, Niels

    2014-01-01

    The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency.......The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency....

  3. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  4. Global climate change: Mitigation opportunities high efficiency large chiller technology

    Energy Technology Data Exchange (ETDEWEB)

    Stanga, M.V.

    1997-12-31

    This paper, comprised of presentation viewgraphs, examines the impact of high efficiency large chiller technology on world electricity consumption and carbon dioxide emissions. Background data are summarized, and sample calculations are presented. Calculations show that presently available high energy efficiency chiller technology has the ability to substantially reduce energy consumption from large chillers. If this technology is widely implemented on a global basis, it could reduce carbon dioxide emissions by 65 million tons by 2010.

  5. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  6. High efficiency USC power plant - present status and future potential

    Energy Technology Data Exchange (ETDEWEB)

    Blum, R. [Faelleskemikerne I/S Fynsvaerket (Denmark); Hald, J. [Elsam/Elkraft/TU Denmark (Denmark)

    1998-12-31

    Increasing demand for energy production with low impact on the environment and minimised fuel consumption can be met with high efficient coal fired power plants with advanced steam parameters. An important key to this improvement is the development of high temperature materials with optimised mechanical strength. Based on the results of more than ten years of development a coal fired power plant with an efficiency above 50 % can now be realised. Future developments focus on materials which enable an efficiency of 52-55 %. (orig.) 25 refs.

  7. High efficiency USC power plant - present status and future potential

    Energy Technology Data Exchange (ETDEWEB)

    Blum, R [Faelleskemikerne I/S Fynsvaerket (Denmark); Hald, J [Elsam/Elkraft/TU Denmark (Denmark)

    1999-12-31

    Increasing demand for energy production with low impact on the environment and minimised fuel consumption can be met with high efficient coal fired power plants with advanced steam parameters. An important key to this improvement is the development of high temperature materials with optimised mechanical strength. Based on the results of more than ten years of development a coal fired power plant with an efficiency above 50 % can now be realised. Future developments focus on materials which enable an efficiency of 52-55 %. (orig.) 25 refs.

  8. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-15

    Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

  9. Charge transport in highly efficient iridium cored electrophosphorescent dendrimers

    Science.gov (United States)

    Markham, Jonathan P. J.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.; Weiter, Martin; Bässler, Heinz

    2004-01-01

    Electrophosphorescent dendrimers are promising materials for highly efficient light-emitting diodes. They consist of a phosphorescent core onto which dendritic groups are attached. Here, we present an investigation into the optical and electronic properties of highly efficient phosphorescent dendrimers. The effect of dendrimer structure on charge transport and optical properties is studied using temperature-dependent charge-generation-layer time-of-flight measurements and current voltage (I-V) analysis. A model is used to explain trends seen in the I-V characteristics. We demonstrate that fine tuning the mobility by chemical structure is possible in these dendrimers and show that this can lead to highly efficient bilayer dendrimer light-emitting diodes with neat emissive layers. Power efficiencies of 20 lm/W were measured for devices containing a second-generation (G2) Ir(ppy)3 dendrimer with a 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene electron transport layer.

  10. Very-High Efficiency, High Power Laser Diodes, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — AdTech Photonics, in collaboration with the Center for Advanced Studies in Photonics Research (CASPR) at UMBC, is pleased to submit this proposal entitled ?Very-High...

  11. [Characteristics of phosphorus uptake and use efficiency of rice with high yield and high phosphorus use efficiency].

    Science.gov (United States)

    Li, Li; Zhang, Xi-Zhou; Li, Tinx-Xuan; Yu, Hai-Ying; Ji, Lin; Chen, Guang-Deng

    2014-07-01

    A total of twenty seven middle maturing rice varieties as parent materials were divided into four types based on P use efficiency for grain yield in 2011 by field experiment with normal phosphorus (P) application. The rice variety with high yield and high P efficiency was identified by pot experiment with normal and low P applications, and the contribution rates of various P efficiencies to yield were investigated in 2012. There were significant genotype differences in yield and P efficiency of the test materials. GRLu17/AiTTP//Lu17_2 (QR20) was identified as a variety with high yield and high P efficiency, and its yields at the low and normal rates of P application were 1.96 and 1.92 times of that of Yuxiang B, respectively. The contribution rate of P accumulation to yield was greater than that of P grain production efficiency and P harvest index across field and pot experiments. The contribution rates of P accumulation and P grain production efficiency to yield were not significantly different under the normal P condition, whereas obvious differences were observed under the low P condition (66.5% and 26.6%). The minimal contribution to yield was P harvest index (11.8%). Under the normal P condition, the contribution rates of P accumulation to yield and P harvest index were the highest at the jointing-heading stage, which were 93.4% and 85.7%, respectively. In addition, the contribution rate of P accumulation to grain production efficiency was 41.8%. Under the low P condition, the maximal contribution rates of P accumulation to yield and grain production efficiency were observed at the tillering-jointing stage, which were 56.9% and 20.1% respectively. Furthermore, the contribution rate of P accumulation to P harvest index was 16.0%. The yield, P accumulation, and P harvest index of QR20 significantly increased under the normal P condition by 20.6%, 18.1% and 18.2% respectively compared with that in the low P condition. The rank of the contribution rates of P

  12. High Efficiency of Two Efficient QSDC with Authentication Is at the Cost of Their Security

    International Nuclear Information System (INIS)

    Su-Juan, Qin; Qiao-Yan, Wen; Luo-Ming, Meng; Fu-Chen, Zhu

    2009-01-01

    Two efficient protocols of quantum secure direct communication with authentication [Chin. Phys. Lett. 25 (2008) 2354] were recently proposed by Liu et al. to improve the efficiency of two protocols presented in [Phys. Rev. A 75 (2007) 026301] by four Pauli operations. We show that the high efficiency of the two protocols is at the expense of their security. The authenticator Trent can reach half the secret by a particular attack strategy in the first protocol. In the second protocol, not only Trent but also an eavesdropper outside can elicit half-information about the secret from the public declaration

  13. Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

    1987-09-01

    We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

  14. Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters

    International Nuclear Information System (INIS)

    Wernicke, Tim

    2010-01-01

    Optoelectronic devices based on GaN and its alloys InGaN and AlGaN are capable of emitting light from the visible to the ultraviolet spectral region. Blue and green lasers have applications in laser projectors, DNA sequencing and spectroscopy. But it is extremely difficult to fabricate green laser diodes. Currently almost all of the light emitting diodes (LEDs) and lasers are grown on GaN crystals that are oriented in the polar (0001) c-plane direction, which provides the most stable growth surface. However the resulting polarization fields on (0001)GaN have detrimental effects on the optical properties of nitride light emitters, e.g. causing significant wavelength shifts and reduced efficiencies in InGaN LEDs. Growth on crystal surfaces with non- and semipolar orientations, e.g. (10 anti 10) m-plane or (11 anti 22), could enable devices with new and improved optical properties. For example, for nonpolar and semipolar LEDs the degree of polarization of the emitted light can be tailored. Furthermore easier to grow devices with green light emission, since the indium incorporation is enhanced for semipolar orientations. In contrast to c-plane GaN there is no polarization field across quantum wells on nonpolar GaN. By reducing the polarization fields an increase in the radiative recombination rate can be expected and would lead to higher LED efficiencies and lower laser thresholds. One of the biggest challenges for the growth of light emitters on non- and semipolar GaN is the choice of a suitable substrate: Heteroepitaxial growth on sapphire or LiAlO 2 allows the deposition of GaN on 2'' diameter wafers and larger. However, these layers show a very high defect density in particular basal plane stacking faults, in comparison to c-plane GaN on sapphire. In order to reduce the defect density we applied successfully epitaxial lateral overgrowth to heteroepitaxial nonpolar a-plane GaN and verified the improvement by spatially and spectrally cathodoluminescence imaging as

  15. The emerging High Efficiency Video Coding standard (HEVC)

    International Nuclear Information System (INIS)

    Raja, Gulistan; Khan, Awais

    2013-01-01

    High definition video (HDV) is becoming popular day by day. This paper describes the performance analysis of latest upcoming video standard known as High Efficiency Video Coding (HEVC). HEVC is designed to fulfil all the requirements for future high definition videos. In this paper, three configurations (intra only, low delay and random access) of HEVC are analyzed using various 480p, 720p and 1080p high definition test video sequences. Simulation results show the superior objective and subjective quality of HEVC

  16. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    International Nuclear Information System (INIS)

    Dorokhov, A.; Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R.; Deveaux, M.; Doziere, G.; Dulinski, W.; Fontaine, J.-C.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.

    2010-01-01

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10μm pitch device was found to be ∼10 13 n eq /cm 2 , while it was only 2x10 12 n eq /cm 2 for a 20μm pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10 14 ) n eq /cm 2 . This goal relies on a fabrication process featuring a 15μm thin, high resistivity (∼1kΩcm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages ( 13 n eq /cm 2 ), making evidence of a significant extension of the radiation tolerance limits of MAPS.

  17. High quality, high efficiency welding technology for nuclear power plants

    International Nuclear Information System (INIS)

    Aoki, Shigeyuki; Nagura, Yasumi

    1996-01-01

    For nuclear power plants, it is required to ensure the safety under the high reliability and to attain the high rate of operation. In the manufacture and installation of the machinery and equipment, the welding techniques which become the basis exert large influence to them. For the purpose of improving joint performance and excluding human errors, welding heat input and the number of passes have been reduced, the automation of welding has been advanced, and at present, narrow gap arc welding and high energy density welding such as electron beam welding and laser welding have been put to practical use. Also in the welding of pipings, automatic gas metal arc welding is employed. As for the welding of main machinery and equipment, there are the welding of the joints that constitute pressure boundaries, the build-up welding on the internal surfaces of pressure vessels for separating primary water from them, and the sealing welding of heating tubes and tube plates in steam generators. These weldings are explained. The welding of pipings and the state of development and application of new welding methods are reported. (K.I.)

  18. High-concentration planar microtracking photovoltaic system exceeding 30% efficiency

    Science.gov (United States)

    Price, Jared S.; Grede, Alex J.; Wang, Baomin; Lipski, Michael V.; Fisher, Brent; Lee, Kyu-Tae; He, Junwen; Brulo, Gregory S.; Ma, Xiaokun; Burroughs, Scott; Rahn, Christopher D.; Nuzzo, Ralph G.; Rogers, John A.; Giebink, Noel C.

    2017-08-01

    Prospects for concentrating photovoltaic (CPV) power are growing as the market increasingly values high power conversion efficiency to leverage now-dominant balance of system and soft costs. This trend is particularly acute for rooftop photovoltaic power, where delivering the high efficiency of traditional CPV in the form factor of a standard rooftop photovoltaic panel could be transformative. Here, we demonstrate a fully automated planar microtracking CPV system 660× concentration ratio over a 140∘ full field of view. In outdoor testing over the course of two sunny days, the system operates automatically from sunrise to sunset, outperforming a 17%-efficient commercial silicon solar cell by generating >50% more energy per unit area per day in a direct head-to-head competition. These results support the technical feasibility of planar microtracking CPV to deliver a step change in the efficiency of rooftop solar panels at a commercially relevant concentration ratio.

  19. Development of high-efficiency solar cells on silicon web

    Science.gov (United States)

    Meier, D. L.; Greggi, J.; Okeeffe, T. W.; Rai-Choudhury, P.

    1986-01-01

    Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

  20. Efficient Unsteady Flow Visualization with High-Order Access Dependencies

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiang; Guo, Hanqi; Yuan, Xiaoru

    2016-04-19

    We present a novel high-order access dependencies based model for efficient pathline computation in unsteady flow visualization. By taking longer access sequences into account to model more sophisticated data access patterns in particle tracing, our method greatly improves the accuracy and reliability in data access prediction. In our work, high-order access dependencies are calculated by tracing uniformly-seeded pathlines in both forward and backward directions in a preprocessing stage. The effectiveness of our proposed approach is demonstrated through a parallel particle tracing framework with high-order data prefetching. Results show that our method achieves higher data locality and hence improves the efficiency of pathline computation.

  1. Quantum Nanostructures by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2009-02-01

    Full Text Available Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C. Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs could be realized. Potential applications of these quantum nanostructures are also discussed.

  2. Efficient estimation for ergodic diffusions sampled at high frequency

    DEFF Research Database (Denmark)

    Sørensen, Michael

    A general theory of efficient estimation for ergodic diffusions sampled at high fre- quency is presented. High frequency sampling is now possible in many applications, in particular in finance. The theory is formulated in term of approximate martingale estimating functions and covers a large class...

  3. High-Efficiency Klystron Design for the CLIC Project

    CERN Document Server

    Mollard, Antoine; Peauger, Franck; Plouin, Juliette; Beunas, Armel; Marchesin, Rodolphe

    2017-01-01

    The CLIC project requests new type of RF sources for the high power conditioning of the accelerating cavities. We are working on the development of a new kind of high-efficiency klystron to fulfill this need. This work is performed under the EuCARD-2 European program and involves theoretical and experimental study of a brand new klystron concept.

  4. Efficient estimation for high similarities using odd sketches

    DEFF Research Database (Denmark)

    Mitzenmacher, Michael; Pagh, Rasmus; Pham, Ninh Dang

    2014-01-01

    . This means that Odd Sketches provide a highly space-efficient estimator for sets of high similarity, which is relevant in applications such as web duplicate detection, collaborative filtering, and association rule learning. The method extends to weighted Jaccard similarity, relevant e.g. for TF-IDF vector...... and web duplicate detection tasks....

  5. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  6. Design of High Efficiency Illumination for LED Lighting

    Directory of Open Access Journals (Sweden)

    Yong-Nong Chang

    2013-01-01

    Full Text Available A high efficiency illumination for LED street lighting is proposed. For energy saving, this paper uses Class-E resonant inverter as main electric circuit to improve efficiency. In addition, single dimming control has the best efficiency, simplest control scheme and lowest circuit cost among other types of dimming techniques. Multiple serial-connected transformers used to drive the LED strings as they can provide galvanic isolation and have the advantage of good current distribution against device difference. Finally, a prototype circuit for driving 112 W LEDs in total was built and tested to verify the theoretical analysis.

  7. High-Efficient Low-Cost Photovoltaics Recent Developments

    CERN Document Server

    Petrova-Koch, Vesselinka; Goetzberger, Adolf

    2009-01-01

    A bird's-eye view of the development and problems of recent photovoltaic cells and systems and prospects for Si feedstock is presented. High-efficient low-cost PV modules, making use of novel efficient solar cells (based on c-Si or III-V materials), and low cost solar concentrators are in the focus of this book. Recent developments of organic photovoltaics, which is expected to overcome its difficulties and to enter the market soon, are also included.

  8. Microwave dynamics of YBCO bi-epitaxial Josephson structures

    DEFF Research Database (Denmark)

    Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

    1996-01-01

    The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

  9. Electrodeposition of epitaxial CdSe on (111) gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

    2000-02-21

    Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

  10. Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films.

    Science.gov (United States)

    Huang, Wei; Chakrabartty, Joyprokash; Harnagea, Catalin; Gedamu, Dawit; Ka, Ibrahima; Chaker, Mohamed; Rosei, Federico; Nechache, Riad

    2018-04-18

    Perovskite multiferroic oxides are promising materials for the realization of sensitive and switchable photodiodes because of their favorable band gap (heterojunction was fabricated by pulsed laser deposition. The heterojunction photodiode exhibits a large ideality factor ( n = ∼5.0) and a response time as fast as 68 ms, thanks to the effective charge carrier transport and collection at the BFCO/SRO interface. The diode can switch direction when the electric polarization is reversed by an external voltage pulse. The time-resolved photoluminescence decay of the device measured at ∼500 nm demonstrates an ultrafast charge transfer (lifetime = ∼6.4 ns) in BFCO/SRO heteroepitaxial structures. The estimated responsivity value at 500 nm and zero bias is 0.38 mA W -1 , which is so far the highest reported for any FE thin film photodiode. Our work highlights the huge potential for using multiferroic oxides to fabricate highly sensitive and switchable photodiodes.

  11. High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

    Science.gov (United States)

    Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

    2017-07-01

    Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

  12. High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p—i—n Photodetectors

    International Nuclear Information System (INIS)

    Wang Guo-Sheng; Lu Hai; Xie Feng; Chen Dun-Jun; Ren Fang-Fang; Zhang Rong; Zheng You-Dou

    2012-01-01

    AlGaN-based back-illuminated solar-blind ultraviolet (UV) p—i—n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates. To improve the overall performance of the PD, a series of structural design considerations and growth procedures are implemented in the epitaxy process. A distinct wavelength-selective photo-response peak of the PD is obtained in the solar-blind region. When operating in photovoltaic mode, the PD exhibits a solar-blind/UV rejection ratio of up to 4 orders of magnitude and a peak responsivity of ∼113.5 mA/W at 270 nm, which corresponds to an external quantum efficiency of ∼52%. Under a reverse bias of −5 V, the PD shows a low dark current of ∼1.8 pA and an enhanced peak quantum efficiency of ∼64%. The thermal noise limited detectivity is estimated to be ∼ 3.3 × 10 13 cm·Hz 1/2 W −1

  13. Fabrication and Characterization of Highly Oriented N-Doped ZnO Nanorods by Selective Area Epitaxy

    Directory of Open Access Journals (Sweden)

    Yang Zhang

    2015-01-01

    Full Text Available High-quality nitrogen-doped ZnO nanorods have been selectively grown on patterned and bare ZnO templates by the combination of nanoimprint lithography and chemical vapor transport methods. The grown nanorods exhibited uniformity in size and orientation as well as controllable density and surface-to-volume ratio. The structural and optical properties of ZnO nanorods and the behaviour of N dopants have been investigated by means of the scanning electron microscope, photoluminescence (PL spectra, and Raman scattering spectra. The additional vibration modes observed in Raman spectra of N-doped ZnO nanorods provided solid evidence of N incorporation in ZnO nanorods. The difference of excitonic emissions from ZnO nanorods with varied density and surface-to-volume ratio suggested the different spatial distribution of intrinsic defects. It was found that the defects giving rise to acceptor-bound exciton (A0X emission were most likely to distribute in the sidewall surface with nonpolar characteristics, while the donor bound exciton (D0X emission related defects distributed uniformly in the near top polar surface.

  14. High efficiency heat transport and power conversion system for cascade

    International Nuclear Information System (INIS)

    Maya, I.; Bourque, R.F.; Creedon, R.L.; Schultz, K.R.

    1985-02-01

    The Cascade ICF reactor features a flowing blanket of solid BeO and LiAlO 2 granules with very high temperature capability (up to approx. 2300 K). The authors present here the design of a high temperature granule transport and heat exchange system, and two options for high efficiency power conversion. The centrifugal-throw transport system uses the peripheral speed imparted to the granules by the rotating chamber to effect granule transport and requires no additional equipment. The heat exchanger design is a vacuum heat transfer concept utilizing gravity-induced flow of the granules over ceramic heat exchange surfaces. A reference Brayton power cycle is presented which achieves 55% net efficiency with 1300 K peak helium temperature. A modified Field steam cycle (a hybrid Rankine/Brayton cycle) is presented as an alternate which achieves 56% net efficiency

  15. Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

    Science.gov (United States)

    Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

    2018-05-01

    Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

  16. High-efficiency white OLEDs based on small molecules

    Science.gov (United States)

    Hatwar, Tukaram K.; Spindler, Jeffrey P.; Ricks, M. L.; Young, Ralph H.; Hamada, Yuuhiko; Saito, N.; Mameno, Kazunobu; Nishikawa, Ryuji; Takahashi, Hisakazu; Rajeswaran, G.

    2004-02-01

    Eastman Kodak Company and SANYO Electric Co., Ltd. recently demonstrated a 15" full-color, organic light-emitting diode display (OLED) using a high-efficiency white emitter combined with a color-filter array. Although useful for display applications, white emission from organic structures is also under consideration for other applications, such as solid-state lighting, where high efficiency and good color rendition are important. By incorporating adjacent blue and orange emitting layers in a multi-layer structure, highly efficient, stable white emission has been attained. With suitable host and dopant combinations, a luminance yield of 20 cd/A and efficiency of 8 lm/W have been achieved at a drive voltage of less than 8 volts and luminance level of 1000 cd/m2. The estimated external efficiency of this device is 6.3% and a high level of operational stability is observed. To our knowledge, this is the highest performance reported so far for white organic electroluminescent devices. We will review white OLED technology and discuss the fabrication and operating characteristics of these devices.

  17. Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

    Science.gov (United States)

    Chen, Lin; Yang, Guan-jun

    2018-02-01

    In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

  18. New configurations for short-pulses high power solid-state lasers: conception and realization of highly doped waveguide amplifiers/lasers grown by liquid phase epitaxy and demonstration of Y2SiO5: Yb and Lu2SiO5: Yb femtosecond lasers

    International Nuclear Information System (INIS)

    Thibault, F.

    2006-04-01

    Yb-doped yttrium and lutetium ortho-silicates, Y 2 SiO 5 :Yb and Lu 2 SiO 5 :Yb respectively, exhibit spectroscopic properties favorable to an efficient laser operation in both high power cw and femtosecond regime. Their first diode-pumped femtosecond operation demonstration lead to exceptional performances in terms of output power and efficiency. In order to realize compact and efficient solid-state laser devices using those materials, we chose a configuration with an Yb-doped medium planar waveguide geometry, grown by liquid phase epitaxy, face-pumped by a single laser diode bar. The growth of highly doped Y 2 SiO 5 :Yb layers, within a large range of compositions and thicknesses, was demonstrated. The refractive index increase due to the substitution of the various dopants is analyzed. The layers spectroscopic properties are similar to the bulk ones, with an noticeably higher crystalline quality. The Yb ion lifetime evolution with respect to its doping shows up a particularly low decrease, proof of a low concentration of extrinsic quenching centers. The covered YSO:24%Yb waveguides exhibit lower than 0.3 dB/cm propagation losses, and provided up to 2.9 dB/cm net amplification at 1082 nm with a single mode output. The realization of the first diode-pumped monolithic cw waveguide lasers was also demonstrated. For a 4% output coupler, they provided up to 340 mW at 1082 nm with a 14% slope efficiency. (author)

  19. Low Cost, High Efficiency, High Pressure Hydrogen Storage

    Energy Technology Data Exchange (ETDEWEB)

    Mark Leavitt

    2010-03-31

    A technical and design evaluation was carried out to meet DOE hydrogen fuel targets for 2010. These targets consisted of a system gravimetric capacity of 2.0 kWh/kg, a system volumetric capacity of 1.5 kWh/L and a system cost of $4/kWh. In compressed hydrogen storage systems, the vast majority of the weight and volume is associated with the hydrogen storage tank. In order to meet gravimetric targets for compressed hydrogen tanks, 10,000 psi carbon resin composites were used to provide the high strength required as well as low weight. For the 10,000 psi tanks, carbon fiber is the largest portion of their cost. Quantum Technologies is a tier one hydrogen system supplier for automotive companies around the world. Over the course of the program Quantum focused on development of technology to allow the compressed hydrogen storage tank to meet DOE goals. At the start of the program in 2004 Quantum was supplying systems with a specific energy of 1.1-1.6 kWh/kg, a volumetric capacity of 1.3 kWh/L and a cost of $73/kWh. Based on the inequities between DOE targets and Quantum’s then current capabilities, focus was placed first on cost reduction and second on weight reduction. Both of these were to be accomplished without reduction of the fuel system’s performance or reliability. Three distinct areas were investigated; optimization of composite structures, development of “smart tanks” that could monitor health of tank thus allowing for lower design safety factor, and the development of “Cool Fuel” technology to allow higher density gas to be stored, thus allowing smaller/lower pressure tanks that would hold the required fuel supply. The second phase of the project deals with three additional distinct tasks focusing on composite structure optimization, liner optimization, and metal.

  20. High Efficient Bidirectional Battery Converter for residential PV Systems

    DEFF Research Database (Denmark)

    Pham, Cam; Kerekes, Tamas; Teodorescu, Remus

    2012-01-01

    Photovoltaic (PV) installation is suited for the residential environment and the generation pattern follows the distribution of residential power consumption in daylight hours. In the cases of unbalance between generation and demand, the Smart PV with its battery storage can absorb or inject...... the power to balance it. High efficient bidirectional converter for the battery storage is required due high system cost and because the power is processed twice. A 1.5kW prototype is designed and built with CoolMOS and SiC diodes, >;95% efficiency has been obtained with 200 kHz hard switching....

  1. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  2. Innovative-Simplified Nuclear Power Plant Efficiency Evaluation with High-Efficiency Steam Injector System

    International Nuclear Information System (INIS)

    Shoji, Goto; Shuichi, Ohmori; Michitsugu, Mori

    2006-01-01

    It is possible to establish simplified system with reduced space and total equipment weight using high-efficiency Steam Injectors (SI) instead of low-pressure feedwater heaters in Nuclear Power Plant (NPP). The SI works as a heat exchanger through direct contact between feedwater from condensers and extracted steam from turbines. It can get higher pressure than supplied steam pressure. The maintenance and reliability are still higher than the feedwater ones because SI has no movable parts. This paper describes the analysis of the heat balance, plant efficiency and the operation of this Innovative-Simplified NPP with high-efficiency SI. The plant efficiency and operation are compared with the electric power of 1100 MWe-class BWR system and the Innovative-Simplified BWR system with SI. The SI model is adapted into the heat balance simulator with a simplified model. The results show that plant efficiencies of the Innovated-Simplified BWR system are almost equal to original BWR ones. The present research is one of the projects that are carried out by Tokyo Electric Power Company, Toshiba Corporation, and six Universities in Japan, funded from the Institute of Applied Energy (IAE) of Japan as the national public research-funded program. (authors)

  3. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  4. A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

    Directory of Open Access Journals (Sweden)

    Xin Duan

    2016-12-01

    Full Text Available A novel metamaterial rectifying surface (MRS for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

  5. A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

    Science.gov (United States)

    Duan, Xin; Chen, Xing; Zhou, Lin

    2016-12-01

    A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

  6. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  7. Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

    Science.gov (United States)

    Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

    2015-12-01

    P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

  8. Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ruppert, P.; Hommel, D.; Behr, T.; Heinke, H.; Waag, A.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1994-04-14

    The properties of molecular beam epitaxial growth of ZnSe epilayers deposited directly on a GaAs substrate are compared to those grown on a GaAs buffer layer. The superior quality of the latter is confirmed by RHEED, TEM and X-ray diffraction. Based on RHEED oscillation studies, a model explaining the dependence of the ZnSe growth rate on Zn and Se fluxes and the substrate temperature is developed taking into account physisorbed and chemisorbed states. For partially relaxed epilayers, the correlation between the relaxation state and the crystalline mosaicity, as found by high resolution X-ray diffraction, is discussed

  9. Optical Epitaxial Growth of Gold Nanoparticle Arrays.

    Science.gov (United States)

    Huang, Ningfeng; Martínez, Luis Javier; Jaquay, Eric; Nakano, Aiichiro; Povinelli, Michelle L

    2015-09-09

    We use an optical analogue of epitaxial growth to assemble gold nanoparticles into 2D arrays. Particles are attracted to a growth template via optical forces and interact through optical binding. Competition between effects determines the final particle arrangements. We use a Monte Carlo model to design a template that favors growth of hexagonal particle arrays. We experimentally demonstrate growth of a highly stable array of 50 gold particles with 200 nm diameter, spaced by 1.1 μm.

  10. Highly efficient light management for perovskite solar cells.

    Science.gov (United States)

    Wang, Dong-Lin; Cui, Hui-Juan; Hou, Guo-Jiao; Zhu, Zhen-Gang; Yan, Qing-Bo; Su, Gang

    2016-01-06

    Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

  11. A Low VSWR and High Efficiency Waveguide Feed Antenna Array

    Directory of Open Access Journals (Sweden)

    Zhao Xiao-Fang

    2018-01-01

    Full Text Available A low VSWR and high efficiency antenna array operating in the Ku band for satellite communications is presented in this paper. To achieve high radiation efficiency and broad enough bandwidth, all-metal radiation elements and full-corporate waveguide feeding network are employed. As the general milling method is used in the multilayer antenna array fabrication, the E-plane waveguide feeding network is adopted here to suppress the wave leakage caused by the imperfect connectivity between adjacent layers. A 4 × 8 elements array prototype was fabricated and tested for verification. The measured results of proposed antenna array show bandwidth of 6.9% (13.9–14.8 GHz for VSWR < 1.5. Furthermore, antenna gain and efficiency of higher than 22.2 dBi and 80% are also exhibited, respectively.

  12. Potential high efficiency solar cells: Applications from space photovoltaic research

    Science.gov (United States)

    Flood, D. J.

    1986-01-01

    NASA involvement in photovoltaic energy conversion research development and applications spans over two decades of continuous progress. Solar cell research and development programs conducted by the Lewis Research Center's Photovoltaic Branch have produced a sound technology base not only for the space program, but for terrestrial applications as well. The fundamental goals which have guided the NASA photovoltaic program are to improve the efficiency and lifetime, and to reduce the mass and cost of photovoltaic energy conversion devices and arrays for use in space. The major efforts in the current Lewis program are on high efficiency, single crystal GaAs planar and concentrator cells, radiation hard InP cells, and superlattice solar cells. A brief historical perspective of accomplishments in high efficiency space solar cells will be given, and current work in all of the above categories will be described. The applicability of space cell research and technology to terrestrial photovoltaics will be discussed.

  13. The thermodynamic characteristics of high efficiency, internal-combustion engines

    International Nuclear Information System (INIS)

    Caton, Jerald A.

    2012-01-01

    Highlights: ► The thermodynamics of an automotive engine are determined using a cycle simulation. ► The net indicated thermal efficiency increased from 37.0% to 53.9%. ► High compression ratio, lean mixtures and high EGR were the important features. ► Efficiency increased due to lower heat losses, and increased work conversion. ► The nitric oxides were essentially zero due to the low combustion temperatures. - Abstract: Recent advancements have demonstrated new combustion modes for internal combustion engines that exhibit low nitric oxide emissions and high thermal efficiencies. These new combustion modes involve various combinations of stratification, lean mixtures, high levels of EGR, multiple injections, variable valve timings, two fuels, and other such features. Although the exact combination of these features that provides the best design is not yet clear, the results (low emissions with high efficiencies) are of major interest. The current work is directed at determining some of the fundamental thermodynamic reasons for the relatively high efficiencies and to quantify these factors. Both the first and second laws are used in this assessment. An automotive engine (5.7 l) which included some of the features mentioned above (e.g., high compression ratios, lean mixtures, and high EGR) was evaluated using a thermodynamic cycle simulation. These features were examined for a moderate load (bmep = 900 kPa), moderate speed (2000 rpm) condition. By the use of lean operation, high EGR levels, high compression ratio and other features, the net indicated thermal efficiency increased from 37.0% to 53.9%. These increases are explained in a step-by-step fashion. The major reasons for these improvements include the higher compression ratio and the dilute charge (lean mixture, high EGR). The dilute charge resulted in lower temperatures which in turn resulted in lower heat loss. In addition, the lower temperatures resulted in higher ratios of the specific heats which

  14. A nuclear standard high-efficiency adsorber for iodine

    International Nuclear Information System (INIS)

    Wang Jianmin; Qian Yinge

    1988-08-01

    The structure of a nuclear standard high-efficiency adsorber, adsorbent and its performance are introduced. The performance and structure were compared with the same kind product of other firms. The results show that the leakage rate is less than 0.005%

  15. Efficiency criteria for high reliability measured system structures

    International Nuclear Information System (INIS)

    Sal'nikov, N.L.

    2012-01-01

    The procedures of structural redundancy are usually used to develop high reliability measured systems. To estimate efficiency of such structures the criteria to compare different systems has been developed. So it is possible to develop more exact system by inspection of redundant system data unit stochastic characteristics in accordance with the developed criteria [ru

  16. Optimization of high-efficiency components; Optimieren auf hohem Niveau

    Energy Technology Data Exchange (ETDEWEB)

    Neumann, Eva

    2009-07-01

    High efficiency is a common feature of modern current inverters and is not a unique selling proposition. Other factors that influence the buyer's decision are cost reduction, reliability and service, optimum grid integration, and the challenges of the competitive thin film technology. (orig.)

  17. Orion, a high efficiency 4π neutron detector

    International Nuclear Information System (INIS)

    Crema, E.; Piasecki, E.; Wang, X.M.; Doubre, H.; Galin, J.; Guerreau, D.; Pouthas, J.; Saint-Laurent, F.

    1990-01-01

    In intermediate energy heavy ion collisions the multiplicity of emitted neutrons is strongly connected to energy dissipation and to impact parameter. We present the 4π detector ORION, a high efficiency liquid scintillator detector which permits to get information on the multiplicity of neutrons measured event-wise and on the spatial distribution of these neutrons [fr

  18. High efficiency hydrodynamic DNA fragmentation in a bubbling system

    NARCIS (Netherlands)

    Li, Lanhui; Jin, Mingliang; Sun, Chenglong; Wang, Xiaoxue; Xie, Shuting; Zhou, Guofu; Van Den Berg, Albert; Eijkel, Jan C.T.; Shui, Lingling

    2017-01-01

    DNA fragmentation down to a precise fragment size is important for biomedical applications, disease determination, gene therapy and shotgun sequencing. In this work, a cheap, easy to operate and high efficiency DNA fragmentation method is demonstrated based on hydrodynamic shearing in a bubbling

  19. High efficiency confinement mode by electron cyclotron heating

    International Nuclear Information System (INIS)

    Funahashi, Akimasa

    1987-01-01

    In the medium size nuclear fusion experiment facility JFT-2M in the Japan Atomic Energy Research Institute, the research on the high efficiency plasma confinement mode has been advanced, and in the experiment in June, 1987, the formation of a high efficiency confinement mode was successfully controlled by electron cyclotron heating, for the first time in the world. This result further advanced the control of the formation of a high efficiency plasma confinement mode and the elucidation of the physical mechanism of that mode, and promoted the research and development of the plasma heating by electron cyclotron heating. In this paper, the recent results of the research on a high efficiency confinement mode at the JFT-2M are reported, and the role of the JFT-2M and the experiment on the improvement of core plasma performance are outlined. Now the plasma temperature exceeding 100 million deg C has been attained in large tokamaks, and in medium size facilities, the various measures for improving confinement performance are to be brought forth and their scientific basis is elucidated to assist large facilities. The JFT-2M started the operation in April, 1983, and has accumulated the results smoothly since then. (Kako, I.)

  20. Super Boiler: First Generation, Ultra-High Efficiency Firetube Boiler

    Energy Technology Data Exchange (ETDEWEB)

    None

    2006-06-01

    This factsheet describes a research project whose goal is to develop and demonstrate a first-generation ultra-high-efficiency, ultra-low emissions, compact gas-fired package boiler (Super Boiler), and formulate a long-range RD&D plan for advanced boiler technology out to the year 2020.

  1. High-efficient solar cells with porous silicon

    International Nuclear Information System (INIS)

    Migunova, A.A.

    2002-01-01

    It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

  2. Benefits of high aerodynamic efficiency to orbital transfer vehicles

    Science.gov (United States)

    Andrews, D. G.; Norris, R. B.; Paris, S. W.

    1984-01-01

    The benefits and costs of high aerodynamic efficiency on aeroassisted orbital transfer vehicles (AOTV) are analyzed. Results show that a high lift to drag (L/D) AOTV can achieve significant velocity savings relative to low L/D aerobraked OTV's when traveling round trip between low Earth orbits (LEO) and alternate orbits as high as geosynchronous Earth orbit (GEO). Trajectory analysis is used to show the impact of thermal protection system technology and the importance of lift loading coefficient on vehicle performance. The possible improvements in AOTV subsystem technologies are assessed and their impact on vehicle inert weight and performance noted. Finally, the performance of high L/D AOTV concepts is compared with the performances of low L/D aeroassisted and all propulsive OTV concepts to assess the benefits of aerodynamic efficiency on this class of vehicle.

  3. High efficiency inductive output tubes with intense annular electron beams

    Science.gov (United States)

    Appanam Karakkad, J.; Matthew, D.; Ray, R.; Beaudoin, B. L.; Narayan, A.; Nusinovich, G. S.; Ting, A.; Antonsen, T. M.

    2017-10-01

    For mobile ionospheric heaters, it is necessary to develop highly efficient RF sources capable of delivering radiation in the frequency range from 3 to 10 MHz with an average power at a megawatt level. A promising source, which is capable of offering these parameters, is a grid-less version of the inductive output tube (IOT), also known as a klystrode. In this paper, studies analyzing the efficiency of grid-less IOTs are described. The basic trade-offs needed to reach high efficiency are investigated. In particular, the trade-off between the peak current and the duration of the current micro-pulse is analyzed. A particle in the cell code is used to self-consistently calculate the distribution in axial and transverse momentum and in total electron energy from the cathode to the collector. The efficiency of IOTs with collectors of various configurations is examined. It is shown that the efficiency of IOTs can be in the 90% range even without using depressed collectors.

  4. How high are option values in energy-efficiency investments?

    International Nuclear Information System (INIS)

    Sanstad, A.H.; Blumstein, C.; Stoft, S.E.; California Univ., Berkeley, CA,

    1995-01-01

    High implicit discount rates in consumers' energy-efficiency investments have long been a source of controversy. In several recent papers, Hassett and Metcalf argue that the uncertainty and irreversibility attendant to such investments, and the resulting option value, account for this anomalously high implicit discounting. Using their model and data, we show that, to the contrary, their analysis falls well short of providing an explanation of this pattern. (author)

  5. Complex Nanostructures by Pulsed Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Noboyuki Koguchi

    2011-06-01

    Full Text Available What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has an even more relevant effect on the electronic properties of the nanostructure, is shape. Gaining a strong control over the electronic properties via shape tuning is the key to access subtle electronic design possibilities. The Pulsed Dropled Epitaxy is an innovative growth method for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Pulsed Dropled Epitaxy it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties.

  6. Efficiency and Loading Evaluation of High Efficiency Mist Eliminators (HEME) - 12003

    Energy Technology Data Exchange (ETDEWEB)

    Giffin, Paxton K.; Parsons, Michael S.; Waggoner, Charles A. [Institute for Clean Energy Technology, Mississippi State University, 205 Research Blvd Starkville, MS 39759 (United States)

    2012-07-01

    High efficiency mist eliminators (HEME) are filters primarily used to remove moisture and/or liquid aerosols from an air stream. HEME elements are designed to reduce aerosol and particulate load on primary High Efficiency Particulate Air (HEPA) filters and to have a liquid particle removal efficiency of approximately 99.5% for aerosols down to sub-micron size particulates. The investigation presented here evaluates the loading capacity of the element in the absence of a water spray cleaning system. The theory is that without the cleaning system, the HEME element will suffer rapid buildup of solid aerosols, greatly reducing the particle loading capacity. Evaluation consists of challenging the element with a waste surrogate dry aerosol and di-octyl phthalate (DOP) at varying intervals of differential pressure to examine the filtering efficiency of three different element designs at three different media velocities. Also, the elements are challenged with a liquid waste surrogate using Laskin nozzles and large dispersion nozzles. These tests allow the loading capacity of the unit to be determined and the effectiveness of washing down the interior of the elements to be evaluated. (authors)

  7. Heat pumps; Synergy of high efficiency and low carbon electricity

    Energy Technology Data Exchange (ETDEWEB)

    Koike, Akio

    2010-09-15

    Heat pump is attracting wide attention for its high efficiency to utilize inexhaustible and renewable ambient heat in the environment. With its rapid innovation and efficiency improvement, this technology has a huge potential to reduce CO2 emissions by replacing currently widespread fossil fuel combustion systems to meet various heat demands from the residential, commercial and industrial sectors. Barriers to deployment such as low public awareness and a relatively long pay-back period do exist, so it is strongly recommended that each country implement policies to promote heat pumps as a renewable energy option and an effective method to combat global warming.

  8. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  9. Iodine laser of high efficiency and fast repetition rate

    Energy Technology Data Exchange (ETDEWEB)

    Hohla, K; Witte, K J

    1976-07-01

    The scaling laws of an iodine laser of high efficiency and fast repetition rate are reported. The laser is pumped with a new kind of low pressure Hg-UV-lamps which convert 32% of the electrical input in UV-light in the absorption band of the iodine laser and which can be fired up to 100 Hz. Details of a 10 kJ/1 nsec system as dimensions, energy density, repetition rate, flow velocity, gas composition and gas pressure and the overall efficiency are given which is expected to be about 2%.

  10. The problems of high efficient extraction from the isochronous cyclotron

    International Nuclear Information System (INIS)

    Schwabe, J.

    1994-06-01

    The problem of high efficient extraction (η ≥ 50%) from isochronous cyclotrons (with the exception of the stripping method) is not completely solved up to this day. This problem is specifically important, because these cyclotrons are being also applied in the production of medical radioisotopes, labeled pharmaceuticals as well as in neutron therapy (oncology), machine industry, agriculture (plant mutagenesis), etc. The aim of the proposed topic is to solve this problem on the AIC-144 isochronous cyclotron in the INP (Institute of Nuclear Physics). Lately, a beam of 20 MeV deuterons with an efficiency of ca. 15% was extracted from this cyclotron. (author). 25 refs, 14 figs

  11. Highly Flexible and Efficient Solar Steam Generation Device.

    Science.gov (United States)

    Chen, Chaoji; Li, Yiju; Song, Jianwei; Yang, Zhi; Kuang, Yudi; Hitz, Emily; Jia, Chao; Gong, Amy; Jiang, Feng; Zhu, J Y; Yang, Bao; Xie, Jia; Hu, Liangbing

    2017-08-01

    Solar steam generation with subsequent steam recondensation has been regarded as one of the most promising techniques to utilize the abundant solar energy and sea water or other unpurified water through water purification, desalination, and distillation. Although tremendous efforts have been dedicated to developing high-efficiency solar steam generation devices, challenges remain in terms of the relatively low efficiency, complicated fabrications, high cost, and inability to scale up. Here, inspired by the water transpiration behavior of trees, the use of carbon nanotube (CNT)-modified flexible wood membrane (F-Wood/CNTs) is demonstrated as a flexible, portable, recyclable, and efficient solar steam generation device for low-cost and scalable solar steam generation applications. Benefitting from the unique structural merits of the F-Wood/CNTs membrane-a black CNT-coated hair-like surface with excellent light absorbability, wood matrix with low thermal conductivity, hierarchical micro- and nanochannels for water pumping and escaping, solar steam generation device based on the F-Wood/CNTs membrane demonstrates a high efficiency of 81% at 10 kW cm -2 , representing one of the highest values ever-reported. The nature-inspired design concept in this study is straightforward and easily scalable, representing one of the most promising solutions for renewable and portable solar energy generation and other related phase-change applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

    Science.gov (United States)

    Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

    2017-11-01

    We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

  13. Simple processing of high efficiency silicon solar cells

    International Nuclear Information System (INIS)

    Hamammu, I.M.; Ibrahim, K.

    2006-01-01

    Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

  14. High efficiency graphene coated copper based thermocells connected in series

    Science.gov (United States)

    Sindhuja, Mani; Indubala, Emayavaramban; Sudha, Venkatachalam; Harinipriya, Seshadri

    2018-04-01

    Conversion of low-grade waste heat into electricity had been studied employing single thermocell or flowcells so far. Graphene coated copper electrodes based thermocells connected in series displayed relatively high efficiency of thermal energy harvesting. The maximum power output of 49.2W/m2 for normalized cross sectional electrode area is obtained at 60ºC of inter electrode temperature difference. The relative carnot efficiency of 20.2% is obtained from the device. The importance of reducing the mass transfer and ion transfer resistance to improve the efficiency of the device is demonstrated. Degradation studies confirmed mild oxidation of copper foil due to corrosion caused by the electrolyte.

  15. High Efficiency Graphene Coated Copper Based Thermocells Connected in Series

    Directory of Open Access Journals (Sweden)

    Mani Sindhuja

    2018-04-01

    Full Text Available Conversion of low-grade waste heat into electricity had been studied employing single thermocell or flowcells so far. Graphene coated copper electrodes based thermocells connected in series displayed relatively high efficiency of thermal energy harvesting. The maximum power output of 49.2 W/m2 for normalized cross sectional electrode area is obtained at 60°C of inter electrode temperature difference. The relative carnot efficiency of 20.2% is obtained from the device. The importance of reducing the mass transfer and ion transfer resistance to improve the efficiency of the device is demonstrated. Degradation studies confirmed mild oxidation of copper foil due to corrosion caused by the electrolyte.

  16. Rigid-beam model of a high-efficiency magnicon

    International Nuclear Information System (INIS)

    Rees, D.E.; Tallerico, P.J.; Humphries, S.J. Jr.

    1993-01-01

    The magnicon is a new type of high-efficiency deflection-modulated amplifier developed at the Institute of Nuclear Physics in Novosibirsk, Russia. The prototype pulsed magnicon achieved an output power of 2.4 MW and an efficiency of 73% at 915 MHz. This paper presents the results of a rigid-beam model for a 700-MHz, 2.5-MW 82%-efficient magnicon. The rigid-beam model allows for characterization of the beam dynamics by tracking only a single electron. The magnicon design presented consists of a drive cavity; passive cavities; a pi-mode, coupled-deflection cavity; and an output cavity. It represents an optimized design. The model is fully self-consistent, and this paper presents the details of the model and calculated performance of a 2.5-MW magnicon

  17. HIGH JET EFFICIENCY AND SIMULATIONS OF BLACK HOLE MAGNETOSPHERES

    International Nuclear Information System (INIS)

    Punsly, Brian

    2011-01-01

    This Letter reports on a growing body of observational evidence that many powerful lobe-dominated (FR II) radio sources likely have jets with high efficiency. This study extends the maximum efficiency line (jet power ∼25 times the thermal luminosity) defined in Fernandes et al. so as to span four decades of jet power. The fact that this line extends over the full span of FR II radio power is a strong indication that this is a fundamental property of jet production that is independent of accretion power. This is a valuable constraint for theorists. For example, the currently popular 'no-net-flux' numerical models of black hole accretion produce jets that are two to three orders of magnitude too weak to be consistent with sources near maximum efficiency.

  18. High efficiency particulate removal with sintered metal filters

    International Nuclear Information System (INIS)

    Kirstein, B.E.; Paplawsky, W.J.; Pence, D.T.; Hedahl, T.G.

    1981-01-01

    Because of their particle removal efficiencies and durability, sintered metal filters have been chosen for high efficiency particulate air (HEPA) filter protection in the off-gas treatment system for the proposed Idaho National Engineering Laboratory Transuranic Waste Treatment Facility. Process evaluation of sintered metal filters indicated a lack of sufficient process design data to ensure trouble-free operation. Subsequence pilot scale testing was performed with flyash as the test particulate. The test results showed that the sintered metal filters can have an efficiency greater than 0.9999999 for the specific test conditions used. Stable pressure drop characteristics were observed in pulsed and reversed flow blowback modes of operation. Over 4900 hours of operation were obtained with operating conditions ranging up to approximately 90 0 C and 24 vol % water vapor in the gas stream

  19. 3rd symposium on high-efficiency boiler technology: potential, performance, shortcomings of natural gas fuelled high-efficiency boilers

    International Nuclear Information System (INIS)

    1993-01-01

    The brochure contains abstracts of the papers presented at the symposium. The potential, performance and marketing problems of natural gas high-efficiency boiler systems are outlined, and new ideas are presented for gas utilities, producers of appliances, fitters, and chimneysweeps. 13 papers are available as separate regards in this database. (HW) [de

  20. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  1. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    Science.gov (United States)

    Zheng, Maxwell S.

    InP cell as the active layer in a monolithically integrated module. Importantly, TF-VLS growth avoids the hobbles of traditional growth: the epitaxial wafer substrate, low utilization efficiency of expensive metalorganic precursors, and high capital depreciation costs due to low throughput. Production costs are projected to be 0.76/W(DC) for the benchmark case of 12% efficient modules and would decrease to 0.40/W(DC) for the long-term potential case of 24% efficient modules.

  2. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    Science.gov (United States)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  3. Lightweight High Efficiency Electric Motors for Space Applications

    Science.gov (United States)

    Robertson, Glen A.; Tyler, Tony R.; Piper, P. J.

    2011-01-01

    Lightweight high efficiency electric motors are needed across a wide range of space applications from - thrust vector actuator control for launch and flight applications to - general vehicle, base camp habitat and experiment control for various mechanisms to - robotics for various stationary and mobile space exploration missions. QM Power?s Parallel Path Magnetic Technology Motors have slowly proven themselves to be a leading motor technology in this area; winning a NASA Phase II for "Lightweight High Efficiency Electric Motors and Actuators for Low Temperature Mobility and Robotics Applications" a US Army Phase II SBIR for "Improved Robot Actuator Motors for Medical Applications", an NSF Phase II SBIR for "Novel Low-Cost Electric Motors for Variable Speed Applications" and a DOE SBIR Phase I for "High Efficiency Commercial Refrigeration Motors" Parallel Path Magnetic Technology obtains the benefits of using permanent magnets while minimizing the historical trade-offs/limitations found in conventional permanent magnet designs. The resulting devices are smaller, lower weight, lower cost and have higher efficiency than competitive permanent magnet and non-permanent magnet designs. QM Power?s motors have been extensively tested and successfully validated by multiple commercial and aerospace customers and partners as Boeing Research and Technology. Prototypes have been made between 0.1 and 10 HP. They are also in the process of scaling motors to over 100kW with their development partners. In this paper, Parallel Path Magnetic Technology Motors will be discussed; specifically addressing their higher efficiency, higher power density, lighter weight, smaller physical size, higher low end torque, wider power zone, cooler temperatures, and greater reliability with lower cost and significant environment benefit for the same peak output power compared to typically motors. A further discussion on the inherent redundancy of these motors for space applications will be provided.

  4. Test Program for High Efficiency Gas Turbine Exhaust Diffuser

    Energy Technology Data Exchange (ETDEWEB)

    Norris, Thomas R.

    2009-12-31

    This research relates to improving the efficiency of flow in a turbine exhaust, and thus, that of the turbine and power plant. The Phase I SBIR project demonstrated the technical viability of “strutlets” to control stalls on a model diffuser strut. Strutlets are a novel flow-improving vane concept intended to improve the efficiency of flow in turbine exhausts. Strutlets can help reduce turbine back pressure, and incrementally improve turbine efficiency, increase power, and reduce greenhouse gas emmission. The long-term goal is a 0.5 percent improvement of each item, averaged over the US gas turbine fleet. The strutlets were tested in a physical scale model of a gas turbine exhaust diffuser. The test flow passage is a straight, annular diffuser with three sets of struts. At the end of Phase 1, the ability of strutlets to keep flow attached to struts was demonstrated, but the strutlet drag was too high for a net efficiency advantage. An independently sponsored followup project did develop a highly-modified low-drag strutlet. In combination with other flow improving vanes, complicance to the stated goals was demonstrated for for simple cycle power plants, and to most of the goals for combined cycle power plants using this particular exhaust geometry. Importantly, low frequency diffuser noise was reduced by 5 dB or more, compared to the baseline. Appolicability to other diffuser geometries is yet to be demonstrated.

  5. Efficient Smoothed Concomitant Lasso Estimation for High Dimensional Regression

    Science.gov (United States)

    Ndiaye, Eugene; Fercoq, Olivier; Gramfort, Alexandre; Leclère, Vincent; Salmon, Joseph

    2017-10-01

    In high dimensional settings, sparse structures are crucial for efficiency, both in term of memory, computation and performance. It is customary to consider ℓ 1 penalty to enforce sparsity in such scenarios. Sparsity enforcing methods, the Lasso being a canonical example, are popular candidates to address high dimension. For efficiency, they rely on tuning a parameter trading data fitting versus sparsity. For the Lasso theory to hold this tuning parameter should be proportional to the noise level, yet the latter is often unknown in practice. A possible remedy is to jointly optimize over the regression parameter as well as over the noise level. This has been considered under several names in the literature: Scaled-Lasso, Square-root Lasso, Concomitant Lasso estimation for instance, and could be of interest for uncertainty quantification. In this work, after illustrating numerical difficulties for the Concomitant Lasso formulation, we propose a modification we coined Smoothed Concomitant Lasso, aimed at increasing numerical stability. We propose an efficient and accurate solver leading to a computational cost no more expensive than the one for the Lasso. We leverage on standard ingredients behind the success of fast Lasso solvers: a coordinate descent algorithm, combined with safe screening rules to achieve speed efficiency, by eliminating early irrelevant features.

  6. High Efficiency, High Temperature Foam Core Heat Exchanger for Fission Surface Power Systems, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Fission-based power systems with power levels of 30 to ≥100 kWe will be needed for planetary surface bases. Development of high temperature, high efficiency heat...

  7. Combustion phasing for maximum efficiency for conventional and high efficiency engines

    International Nuclear Information System (INIS)

    Caton, Jerald A.

    2014-01-01

    Highlights: • Combustion phasing for max efficiency is a function of engine parameters. • Combustion phasing is most affected by heat transfer, compression ratio, burn duration. • Combustion phasing is less affected by speed, load, equivalence ratio and EGR. • Combustion phasing for a high efficiency engine was more advanced. • Exergy destruction during combustion as functions of combustion phasing is reported. - Abstract: The importance of the phasing of the combustion event for internal-combustion engines is well appreciated, but quantitative details are sparse. The objective of the current work was to examine the optimum combustion phasing (based on maximum bmep) as functions of engine design and operating variables. A thermodynamic, engine cycle simulation was used to complete this assessment. As metrics for the combustion phasing, both the crank angle for 50% fuel mass burned (CA 50 ) and the crank angle for peak pressure (CA pp ) are reported as functions of the engine variables. In contrast to common statements in the literature, the optimum CA 50 and CA pp vary depending on the design and operating variables. Optimum, as used in this paper, refers to the combustion timing that provides the maximum bmep and brake thermal efficiency (MBT timing). For this work, the variables with the greatest influence on the optimum CA 50 and CA pp were the heat transfer level, the burn duration and the compression ratio. Other variables such as equivalence ratio, EGR level, engine speed and engine load had a much smaller impact on the optimum CA 50 and CA pp . For the conventional engine, for the conditions examined, the optimum CA 50 varied between about 5 and 11°aTDC, and the optimum CA pp varied between about 9 and 16°aTDC. For a high efficiency engine (high dilution, high compression ratio), the optimum CA 50 was 2.5°aTDC, and the optimum CA pp was 7.8°aTDC. These more advanced values for the optimum CA 50 and CA pp for the high efficiency engine were

  8. High resolution PET breast imager with improved detection efficiency

    Science.gov (United States)

    Majewski, Stanislaw

    2010-06-08

    A highly efficient PET breast imager for detecting lesions in the entire breast including those located close to the patient's chest wall. The breast imager includes a ring of imaging modules surrounding the imaged breast. Each imaging module includes a slant imaging light guide inserted between a gamma radiation sensor and a photodetector. The slant light guide permits the gamma radiation sensors to be placed in close proximity to the skin of the chest wall thereby extending the sensitive region of the imager to the base of the breast. Several types of photodetectors are proposed for use in the detector modules, with compact silicon photomultipliers as the preferred choice, due to its high compactness. The geometry of the detector heads and the arrangement of the detector ring significantly reduce dead regions thereby improving detection efficiency for lesions located close to the chest wall.

  9. The high efficiency steel filters for nuclear air cleaning

    International Nuclear Information System (INIS)

    Bergman, W.; Larsen, G.; Lopez, R.; Williams, K.; Violet, C.

    1990-08-01

    We have, in cooperation with industry, developed high-efficiency filters made from sintered stainless-steel fibers for use in several air-cleaning applications in the nuclear industry. These filters were developed to overcome the failure modes in present high-efficiency particulate air (HEPA) filters. HEPA filters are made from glass paper and glue, and they may fail when they get hot or wet and when they are overpressured. In developing our steel filters, we first evaluated the commercially available stainless-steel filter media made from sintered powder and sintered fiber. The sintered-fiber media performed much better than sintered-powder media, and the best media had the smallest fiber diameter. Using the best media, we then built prototype filters for venting compressed gases and evaluated them in our automated filter tester. 12 refs., 20 figs

  10. High efficiency steel filters for nuclear air cleaning

    International Nuclear Information System (INIS)

    Bergman, W.; Conner, J.; Larsen, G.; Lopez, R.; Turner, C.; Vahla, G.; Violet, C.; Williams, K.

    1991-01-01

    The authors have, in cooperation with industry, developed high-efficiency filters made from sintered stainless-steel fibers for use in several air-cleaning applications in the nuclear industry. These filters were developed to overcome the failure modes in present high-efficiently particulate air (HEPA) filters. HEPA filters are made from glass paper and glue, and they may fail when they get hot or wet and when they are overpressured. In developing steel filters, they first evaluated the commercially available stainless-steel filter media made from sintered powder and sintered fiber. The sintered-fiber media performed much better than sintered-powder media, and the best media had the smallest fiber diameter. Using the best media, prototype filters were then built for venting compressed gases and evaluated in their automated filter tester

  11. Blanket options for high-efficiency fusion power

    International Nuclear Information System (INIS)

    Usher, J.L.; Lazareth, O.W.; Fillo, J.A.; Horn, F.L.; Powell, J.R.

    1980-01-01

    The efficiencies of blankets for fusion reactors are usually in the range of 30 to 40%, limited by the operating temperatures (500 0 C) of conventional structural materials such as stainless steels. In this project two-zone blankets are proposed; these blankets consist of a low-temperature shell surrounding a high-temperature interior zone. A survey of nucleonics and thermal hydraulic parameters has led to a reference blanket design consisting of a water-cooled stainless steel shell around a BeO, ZrO 2 interior (cooled by argon) utilizing Li 2 O for tritium breeding. In this design, approximately 60% of the fusion energy is deposited in the high-temperature interior. The maximum argon temperature is 2230 0 C leading to an overall efficiency estimate of 55 to 60% for this reference case

  12. Fusion blankets for high-efficiency power cycles

    International Nuclear Information System (INIS)

    Usher, J.L.; Lazareth, O.W.; Fillo, J.A.; Horn, F.L.; Powell, J.R.

    1980-01-01

    The efficiencies of blankets for fusion reactors are usually in the range of 30 to 40%, limited by the operating temperatures (500 0 C) of conventional structural materials such as stainless steels. In this project two-zone blankets are proposed; these blankets consist of a low-temperature shell surrounding a high-temperature interior zone. A survey of nucleonics and thermal hydraulic parameters has led to a reference blanket design consisting of a water-cooled stainless steel shell around a BeO, ZrO 2 interior (cooled by argon) utilizing Li 2 O for tritium breeding. In this design, approximately 60% of the fusion energy is deposited in the high-temperature interior. The maximum argon temperature is 2230 0 C leading to an overall efficiency estimate of 55 to 60% for this reference case

  13. Fusion blanket for high-efficiency power cycles

    International Nuclear Information System (INIS)

    Usher, J.L.; Powell, J.R.; Fillo, J.A.; Horn, F.L.; Lazareth, O.W.; Taussig, R.

    1980-01-01

    The efficiencies of blankets for fusion reactors are usually in the range of 30 to 40%, limited by the operating temperature (500 0 C) of conventional structural materials such as stainless steels. In this project two-zone blankets are proposed; these blankets consist of a low-temperature shell surrounding a high-temperature interior zone. A survey of nucleonics and thermal hydraulic parameters has led to a reference blanket design consisting of a water-cooled stainless steel shell around a BeO, ZrO 2 interior (cooled by Ar) utilizing Li 2 O for tritium breeding. In this design, approx. 60% of the fusion energy is deposited in the high-temperature interior. The maximum Ar temperature is 2230 0 C leading to an overall efficiency estimate of 55 to 60% for this reference case

  14. Fusion blankets for high-efficiency power cycles

    International Nuclear Information System (INIS)

    Usher, J.L.; Lazareth, O.W.; Fillo, J.A.; Horn, F.L.; Powell, J.R.

    1981-01-01

    The efficiencies of blankets for fusion reactors are usually in the range of 30 to 40%, limited by the operating temperatures (500 deg C) of conventional structural materials such as stainless steels. In this project 'two-zone' blankets are proposed; these blankets consist of a low-temperature shell surrounding a high-temperature interior zone. A survey of nucleonics and thermal hydraulic parameters has led to a reference blanket design consisting of a water-cooled stainless steel shell around a BeO, ZrO 2 interior (cooled by argon) utilizing Li 2 O for tritium breeding. In this design, approximately 60% of the fusion energy is deposited in the high-temperature interior. The maximum argon temperature is 2230 deg C leading to an overall efficiency estimate of 55 to 60% for this reference case. (author)

  15. Irradiation effects on high efficiency Si solar cells

    International Nuclear Information System (INIS)

    Nguyen Duy, T.; Amingual, D.; Colardelle, P.; Bernard, J.

    1974-01-01

    By optimizing the diffusion parameters, high efficiency cells are obtained with 2ohmsxcm (13.5% AMO) and 10ohmsxcm (12.5% AMO) silicon material. These new cells have been submitted to radiation tests under 1MeV, 2MeV electrons and 2.5MeV protons. Their behavior under irradiation is found to be dependent only on the bulk material. By using the same resistivity silicon, the rate of degradation is exactly the same than those of conventional cells. The power increase, due to a better superficial response of the cell, is maintained after irradiation. These results show that new high efficiency cells offer an E.O.L. power higher than conventional cells [fr

  16. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  17. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  18. Highly efficient electron vortex beams generated by nanofabricated phase holograms

    Energy Technology Data Exchange (ETDEWEB)

    Grillo, Vincenzo, E-mail: vincenzo.grillo@nano.cnr.it [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); CNR-IMEM Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Carlo Gazzadi, Gian [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Karimi, Ebrahim [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa, Ontario K1N 6N5 (Canada); Mafakheri, Erfan [Dipartimento di Fisica Informatica e Matematica, Università di Modena e Reggio Emilia, via G Campi 213/a, I-41125 Modena (Italy); Boyd, Robert W. [Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa, Ontario K1N 6N5 (Canada); Frabboni, Stefano [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Dipartimento di Fisica Informatica e Matematica, Università di Modena e Reggio Emilia, via G Campi 213/a, I-41125 Modena (Italy)

    2014-01-27

    We propose an improved type of holographic-plate suitable for the shaping of electron beams. The plate is fabricated by a focused ion beam on a silicon nitride membrane and introduces a controllable phase shift to the electron wavefunction. We adopted the optimal blazed-profile design for the phase hologram, which results in the generation of highly efficient (25%) electron vortex beams. This approach paves the route towards applications in nano-scale imaging and materials science.

  19. Holography as a highly efficient RG flow I: Rephrasing gravity

    OpenAIRE

    Behr, Nicolas; Kuperstein, Stanislav; Mukhopadhyay, Ayan

    2015-01-01

    We investigate how the holographic correspondence can be reformulated as a generalisation of Wilsonian RG flow in a strongly interacting large $N$ quantum field theory. We firstly define a \\textit{highly efficient RG flow} as one in which the Ward identities related to local conservation of energy, momentum and charges preserve the same form at each scale -- to achieve this it is necessary to redefine the background metric and external sources at each scale as functionals of the effective sin...

  20. Sm , Bi phosphors with high efficiency white-light-emittin

    Indian Academy of Sciences (India)

    2017-08-29

    Aug 29, 2017 ... Therefore, researches on high efficiency red phos- phors are very important. So far ..... ing concentration and reached a maximum at y = 8 mol%. A .... [10] Xue L P, Wang Y J, Lv P W, Chen D G, Lin Z, Liang J K et al. 2009 Crystal ... [28] Liu J, Xu B, Song C, Luo H, Zou X, Han L et al 2012 Cryst-. EngComm.

  1. High-efficiency pumps drastically reduce energy consumption

    Energy Technology Data Exchange (ETDEWEB)

    Anon

    2002-05-01

    Wilo's Stratos pumps for air conditioning and other domestic heating applications combine the advantages of wet runner technology with an innovative electronic commutator motor. The energy consumption of these high-efficiency pumps is halved compared with similar wet runner designs. With vast numbers of pumps used in buildings across Europe alone, the adoption of this technology potentially offers significant energy sayings. (Author)

  2. Wavy channel transistor for area efficient high performance operation

    KAUST Repository

    Fahad, Hossain M.

    2013-04-05

    We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.

  3. Highly efficient electron vortex beams generated by nanofabricated phase holograms

    International Nuclear Information System (INIS)

    Grillo, Vincenzo; Carlo Gazzadi, Gian; Karimi, Ebrahim; Mafakheri, Erfan; Boyd, Robert W.; Frabboni, Stefano

    2014-01-01

    We propose an improved type of holographic-plate suitable for the shaping of electron beams. The plate is fabricated by a focused ion beam on a silicon nitride membrane and introduces a controllable phase shift to the electron wavefunction. We adopted the optimal blazed-profile design for the phase hologram, which results in the generation of highly efficient (25%) electron vortex beams. This approach paves the route towards applications in nano-scale imaging and materials science

  4. High voltage generator circuit with low power and high efficiency applied in EEPROM

    International Nuclear Information System (INIS)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

  5. Development and evaluation of a cleanable high efficiency steel filter

    International Nuclear Information System (INIS)

    Bergman, W.; Larsen, G.; Weber, F.; Wilson, P.; Lopez, R.; Valha, G.; Conner, J.; Garr, J.; Williams, K.; Biermann, A.; Wilson, K.; Moore, P.; Gellner, C.; Rapchun, D.; Simon, K.; Turley, J.; Frye, L.; Monroe, D.

    1993-01-01

    We have developed a high efficiency steel filter that can be cleaned in-situ by reverse air pulses. The filter consists of 64 pleated cylindrical filter elements packaged into a 6l0 x 6l0 x 292 mm aluminum frame and has 13.5 m 2 of filter area. The filter media consists of a sintered steel fiber mat using 2 μm diameter fibers. We conducted an optimization study for filter efficiency and pressure drop to determine the filter design parameters of pleat width, pleat depth, outside diameter of the cylinder, and the total number of cylinders. Several prototype cylinders were then built and evaluated in terms of filter cleaning by reverse air pulses. The results of these studies were used to build the high efficiency steel filter. We evaluated the prototype filter for efficiency and cleanability. The DOP filter certification test showed the filter has a passing efficiency of 99.99% but a failing pressure drop of 0.80 kPa at 1,700 m 3 /hr. Since we were not able to achieve a pressure drop less than 0.25 kPa, the steel filter does not meet all the criteria for a HEPA filter. Filter loading and cleaning tests using AC Fine dust showed the filter could be repeatedly cleaned by reverse air pulses. The next phase of the prototype evaluation consisted of installing the unit and support housing in the exhaust duct work of a uranium grit blaster for a field evaluation at the Y-12 Plant in Oak Ridge, TN. The grit blaster is used to clean the surface of uranium parts and generates a cloud of UO 2 aerosols. We used a 1,700 m 3 /hr slip stream from the 10,200 m 3 /hr exhaust system

  6. Telescoping Solar Array Concept for Achieving High Packaging Efficiency

    Science.gov (United States)

    Mikulas, Martin; Pappa, Richard; Warren, Jay; Rose, Geoff

    2015-01-01

    Lightweight, high-efficiency solar arrays are required for future deep space missions using high-power Solar Electric Propulsion (SEP). Structural performance metrics for state-of-the art 30-50 kW flexible blanket arrays recently demonstrated in ground tests are approximately 40 kW/cu m packaging efficiency, 150 W/kg specific power, 0.1 Hz deployed stiffness, and 0.2 g deployed strength. Much larger arrays with up to a megawatt or more of power and improved packaging and specific power are of interest to mission planners for minimizing launch and life cycle costs of Mars exploration. A new concept referred to as the Compact Telescoping Array (CTA) with 60 kW/cu m packaging efficiency at 1 MW of power is described herein. Performance metrics as a function of array size and corresponding power level are derived analytically and validated by finite element analysis. Feasible CTA packaging and deployment approaches are also described. The CTA was developed, in part, to serve as a NASA reference solar array concept against which other proposed designs of 50-1000 kW arrays for future high-power SEP missions could be compared.

  7. Progress in efficient doping of high aluminum-containing group III-nitrides

    Science.gov (United States)

    Liang, Y.-H.; Towe, E.

    2018-03-01

    The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

  8. Mechanical exfoliation of epitaxial graphene on Ir(111) enabled by Br2 intercalation.

    Science.gov (United States)

    Herbig, Charlotte; Kaiser, Markus; Bendiab, Nedjma; Schumacher, Stefan; Förster, Daniel F; Coraux, Johann; Meerholz, Klaus; Michely, Thomas; Busse, Carsten

    2012-08-08

    We show here that Br(2) intercalation is an efficient method to enable exfoliation of epitaxial graphene on metals by adhesive tape. We exemplify this method for high-quality graphene of macroscopic extension on Ir(111). The sample quality and the transfer process are monitored using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), scanning electron microscopy (SEM) and Raman spectroscopy. The developed process provides an opportunity for preparing graphene of strictly monatomic thickness and well-defined orientation including the transfer to poly(ethylene terephthalate) (PET) foil.

  9. High precision efficiency calibration of a HPGe detector

    International Nuclear Information System (INIS)

    Nica, N.; Hardy, J.C.; Iacob, V.E.; Helmer, R.G.

    2003-01-01

    Many experiments involving measurements of γ rays require a very precise efficiency calibration. Since γ-ray detection and identification also requires good energy resolution, the most commonly used detectors are of the coaxial HPGe type. We have calibrated our 70% HPGe to ∼ 0.2% precision, motivated by the measurement of precise branching ratios (BR) in superallowed 0 + → 0 + β decays. These BRs are essential ingredients in extracting ft-values needed to test the Standard Model via the unitarity of the Cabibbo-Kobayashi-Maskawa matrix, a test that it currently fails by more than two standard deviations. To achieve the required high precision in our efficiency calibration, we measured 17 radioactive sources at a source-detector distance of 15 cm. Some of these were commercial 'standard' sources but we achieved the highest relative precision with 'home-made' sources selected because they have simple decay schemes with negligible side feeding, thus providing exactly matched γ-ray intensities. These latter sources were produced by us at Texas A and M by n-activation or by nuclear reactions. Another critical source among the 17 was a 60 Co source produced by Physikalisch-Technische Bundesanstalt, Braunschweig, Germany: its absolute activity was quoted to better than 0.06%. We used it to establish our absolute efficiency, while all the other sources were used to determine relative efficiencies, extending our calibration over a large energy range (40-3500 keV). Efficiencies were also determined with Monte Carlo calculations performed with the CYLTRAN code. The physical parameters of the Ge crystal were independently determined and only two (unmeasurable) dead-layers were adjusted, within physically reasonable limits, to achieve precise absolute agreement with our measured efficiencies. The combination of measured efficiencies at more than 60 individual energies and Monte Carlo calculations to interpolate between them allows us to quote the efficiency of our

  10. CFD application to advanced design for high efficiency spacer grid

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Kazuo, E-mail: kazuo3_ikeda@ndc.mhi.co.jp

    2014-11-15

    Highlights: • A new LDV was developed to investigate the local velocity in a rod bundle and inside a spacer grid. • The design information that utilizes for high efficiency spacer grid has been obtained. • CFD methodology that predicts flow field in a PWR fuel has been developed. • The high efficiency spacer grid was designed using the CFD methodology. - Abstract: Pressurized water reactor (PWR) fuels have been developed to meet the needs of the market. A spacer grid is a key component to improve thermal hydraulic performance of a PWR fuel assembly. Mixing structures (vanes) of a spacer grid promote coolant mixing and enhance heat removal from fuel rods. A larger mixing vane would improve mixing effect, which would increase the departure from nucleate boiling (DNB) benefit for fuel. However, the increased pressure loss at large mixing vanes would reduce the coolant flow at the mixed fuel core, which would reduce the DNB margin. The solution is to develop a spacer grid whose pressure loss is equal to or less than the current spacer grid and that has higher critical heat flux (CHF) performance. For this reason, a requirement of design tool for predicting the pressure loss and CHF performance of spacer grids has been increased. The author and co-workers have been worked for development of high efficiency spacer grid using Computational Fluid Dynamics (CFD) for nearly 20 years. A new laser Doppler velocimetry (LDV), which is miniaturized with fiber optics embedded in a fuel cladding, was developed to investigate the local velocity profile in a rod bundle and inside a spacer grid. The rod-embedded fiber LDV (rod LDV) can be inserted in an arbitrary grid cell instead of a fuel rod, and has the advantage of not disturbing the flow field since it is the same shape as a fuel rod. The probe volume of the rod LDV is small enough to measure spatial velocity profile in a rod gap and inside a spacer grid. According to benchmark experiments such as flow velocity

  11. CFD application to advanced design for high efficiency spacer grid

    International Nuclear Information System (INIS)

    Ikeda, Kazuo

    2014-01-01

    Highlights: • A new LDV was developed to investigate the local velocity in a rod bundle and inside a spacer grid. • The design information that utilizes for high efficiency spacer grid has been obtained. • CFD methodology that predicts flow field in a PWR fuel has been developed. • The high efficiency spacer grid was designed using the CFD methodology. - Abstract: Pressurized water reactor (PWR) fuels have been developed to meet the needs of the market. A spacer grid is a key component to improve thermal hydraulic performance of a PWR fuel assembly. Mixing structures (vanes) of a spacer grid promote coolant mixing and enhance heat removal from fuel rods. A larger mixing vane would improve mixing effect, which would increase the departure from nucleate boiling (DNB) benefit for fuel. However, the increased pressure loss at large mixing vanes would reduce the coolant flow at the mixed fuel core, which would reduce the DNB margin. The solution is to develop a spacer grid whose pressure loss is equal to or less than the current spacer grid and that has higher critical heat flux (CHF) performance. For this reason, a requirement of design tool for predicting the pressure loss and CHF performance of spacer grids has been increased. The author and co-workers have been worked for development of high efficiency spacer grid using Computational Fluid Dynamics (CFD) for nearly 20 years. A new laser Doppler velocimetry (LDV), which is miniaturized with fiber optics embedded in a fuel cladding, was developed to investigate the local velocity profile in a rod bundle and inside a spacer grid. The rod-embedded fiber LDV (rod LDV) can be inserted in an arbitrary grid cell instead of a fuel rod, and has the advantage of not disturbing the flow field since it is the same shape as a fuel rod. The probe volume of the rod LDV is small enough to measure spatial velocity profile in a rod gap and inside a spacer grid. According to benchmark experiments such as flow velocity

  12. Metamaterial Receivers for High Efficiency Concentrated Solar Energy Conversion

    Energy Technology Data Exchange (ETDEWEB)

    Yellowhair, Julius E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Concentrating Solar Technologies Dept.; Kwon, Hoyeong [Univ. of Texas, Austin, TX (United States). Dept. of Electrical and Computer Engineering; Alu, Andrea [Univ. of Texas, Austin, TX (United States). Dept. of Electrical and Computer Engineering; Jarecki, Robert L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Concentrating Solar Technologies Dept.; Shinde, Subhash L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Concentrating Solar Technologies Dept.

    2016-09-01

    Operation of concentrated solar power receivers at higher temperatures (>700°C) would enable supercritical carbon dioxide (sCO2) power cycles for improved power cycle efficiencies (>50%) and cost-effective solar thermal power. Unfortunately, radiative losses at higher temperatures in conventional receivers can negatively impact the system efficiency gains. One approach to improve receiver thermal efficiency is to utilize selective coatings that enhance absorption across the visible solar spectrum while minimizing emission in the infrared to reduce radiative losses. Existing coatings, however, tend to degrade rapidly at elevated temperatures. In this report, we report on the initial designs and fabrication of spectrally selective metamaterial-based absorbers for high-temperature, high-thermal flux environments important for solarized sCO2 power cycles. Metamaterials are structured media whose optical properties are determined by sub-wavelength structural features instead of bulk material properties, providing unique solutions by decoupling the optical absorption spectrum from thermal stability requirements. The key enabling innovative concept proposed is the use of structured surfaces with spectral responses that can be tailored to optimize the absorption and retention of solar energy for a given temperature range. In this initial study through the Academic Alliance partnership with University of Texas at Austin, we use Tungsten for its stability in expected harsh environments, compatibility with microfabrication techniques, and required optical performance. Our goal is to tailor the optical properties for high (near unity) absorptivity across the majority of the solar spectrum and over a broad range of incidence angles, and at the same time achieve negligible absorptivity in the near infrared to optimize the energy absorbed and retained. To this goal, we apply the recently developed concept of plasmonic Brewster angle to suitably designed

  13. Highly Efficient Thermoresponsive Nanocomposite for Controlled Release Applications

    KAUST Repository

    Yassine, Omar

    2016-06-23

    Highly efficient magnetic release from nanocomposite microparticles is shown, which are made of Poly (N-isopropylacrylamide) hydrogel with embedded iron nanowires. A simple microfluidic technique was adopted to fabricate the microparticles with a high control of the nanowire concentration and in a relatively short time compared to chemical synthesis methods. The thermoresponsive microparticles were used for the remotely triggered release of Rhodamine (B). With a magnetic field of only 1 mT and 20 kHz a drug release of 6.5% and 70% was achieved in the continuous and pulsatile modes, respectively. Those release values are similar to the ones commonly obtained using superparamagnetic beads but accomplished with a magnetic field of five orders of magnitude lower power. The high efficiency is a result of the high remanent magnetization of the nanowires, which produce a large torque when exposed to a magnetic field. This causes the nanowires to vibrate, resulting in friction losses and heating. For comparison, microparticles with superparamagnetic beads were also fabricated and tested; while those worked at 73 mT and 600 kHz, no release was observed at the low field conditions. Cytotoxicity assays showed similar and high cell viability for microparticles with nanowires and beads.

  14. Highly Efficient Thermoresponsive Nanocomposite for Controlled Release Applications

    KAUST Repository

    Yassine, Omar; Zaher, Amir; Li, Erqiang; Alfadhel, Ahmed; Perez, Jose E.; Kavaldzhiev, Mincho; Contreras, Maria F.; Thoroddsen, Sigurdur T; Khashab, Niveen M.; Kosel, Jü rgen

    2016-01-01

    Highly efficient magnetic release from nanocomposite microparticles is shown, which are made of Poly (N-isopropylacrylamide) hydrogel with embedded iron nanowires. A simple microfluidic technique was adopted to fabricate the microparticles with a high control of the nanowire concentration and in a relatively short time compared to chemical synthesis methods. The thermoresponsive microparticles were used for the remotely triggered release of Rhodamine (B). With a magnetic field of only 1 mT and 20 kHz a drug release of 6.5% and 70% was achieved in the continuous and pulsatile modes, respectively. Those release values are similar to the ones commonly obtained using superparamagnetic beads but accomplished with a magnetic field of five orders of magnitude lower power. The high efficiency is a result of the high remanent magnetization of the nanowires, which produce a large torque when exposed to a magnetic field. This causes the nanowires to vibrate, resulting in friction losses and heating. For comparison, microparticles with superparamagnetic beads were also fabricated and tested; while those worked at 73 mT and 600 kHz, no release was observed at the low field conditions. Cytotoxicity assays showed similar and high cell viability for microparticles with nanowires and beads.

  15. High Efficiency Heat Exchanger for High Temperature and High Pressure Applications

    Energy Technology Data Exchange (ETDEWEB)

    Sienicki, James J. [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Lv, Qiuping [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Moisseytsev, Anton [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division

    2017-09-29

    CompRex, LLC (CompRex) specializes in the design and manufacture of compact heat exchangers and heat exchange reactors for high temperature and high pressure applications. CompRex’s proprietary compact technology not only increases heat exchange efficiency by at least 25 % but also reduces footprint by at least a factor of ten compared to traditional shell-and-tube solutions of the same capacity and by 15 to 20 % compared to other currently available Printed Circuit Heat Exchanger (PCHE) solutions. As a result, CompRex’s solution is especially suitable for Brayton cycle supercritical carbon dioxide (sCO2) systems given its high efficiency and significantly lower capital and operating expenses. CompRex has already successfully demonstrated its technology and ability to deliver with a pilot-scale compact heat exchanger that was under contract by the Naval Nuclear Laboratory for sCO2 power cycle development. The performance tested unit met or exceeded the thermal and hydraulic specifications with measured heat transfer between 95 to 98 % of maximum heat transfer and temperature and pressure drop values all consistent with the modeled values. CompRex’s vision is to commercialize its compact technology and become the leading provider for compact heat exchangers and heat exchange reactors for various applications including Brayton cycle sCO2 systems. One of the limitations of the sCO2 Brayton power cycle is the design and manufacturing of efficient heat exchangers at extreme operating conditions. Current diffusion-bonded heat exchangers have limitations on the channel size through which the fluid travels, resulting in excessive solid material per heat exchanger volume. CompRex’s design allows for more open area and shorter fluid proximity for increased heat transfer efficiency while sustaining the structural integrity needed for the application. CompRex is developing a novel improvement to its current heat exchanger design where fluids are directed to alternating

  16. Design Strategies for High-Efficiency CdTe Solar Cells

    Science.gov (United States)

    Song, Tao

    With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations suggest that the (Mg,Zn)O alloy with 20% Mg, or a similar type-I heterojunction partner with moderate DeltaE C (e.g., Cd(S,O) or (Cd,Mg)Te with appropriate oxygen or magnesium ratios) should yield higher voltages and would therefore be better candidates for the CdTe-cell emitter. The CdTe/substrate interface is also of great importance, particularly in the growth of epitaxial

  17. A high efficiency hybrid stirling-pulse tube cryocooler

    Directory of Open Access Journals (Sweden)

    Xiaotao Wang

    2015-03-01

    Full Text Available This article presented a hybrid cryocooler which combines the room temperature displacers and the pulse tube in one system. Compared with a traditional pulse tube cryocooler, the system uses the rod-less ambient displacer to recover the expansion work from the pulse tube cold end to improve the efficiency while still keeps the advantage of the pulse tube cryocooler with no moving parts at the cold region. In the meantime, dual-opposed configurations for both the compression pistons and displacers reduce the cooler vibration to a very low level. In the experiments, a lowest no-load temperature of 38.5 K has been obtained and the cooling power at 80K was 26.4 W with an input electric power of 290 W. This leads to an efficiency of 24.2% of Carnot, marginally higher than that of an ordinary pulse tube cryocooler. The hybrid configuration herein provides a very competitive option when a high efficiency, high-reliability and robust cryocooler is desired.

  18. High-efficiency ballistic electrostatic generator using microdroplets

    Science.gov (United States)

    Xie, Yanbo; Bos, Diederik; de Vreede, Lennart J.; de Boer, Hans L.; van der Meulen, Mark-Jan; Versluis, Michel; Sprenkels, Ad J.; van den Berg, Albert; Eijkel, Jan C. T.

    2014-04-01

    The strong demand for renewable energy promotes research on novel methods and technologies for energy conversion. Microfluidic systems for energy conversion by streaming current are less known to the public, and the relatively low efficiencies previously obtained seemed to limit the further applications of such systems. Here we report a microdroplet-based electrostatic generator operating by an acceleration-deceleration cycle (‘ballistic’ conversion), and show that this principle enables both high efficiency and compact simple design. Water is accelerated by pumping it through a micropore to form a microjet breaking up into fast-moving charged droplets. Droplet kinetic energy is converted to electrical energy when the charged droplets decelerate in the electrical field that forms between membrane and target. We demonstrate conversion efficiencies of up to 48%, a power density of 160 kW m-2 and both high- (20 kV) and low- (500 V) voltage operation. Besides offering striking new insights, the device potentially opens up new perspectives for low-cost and robust renewable energy conversion.

  19. Radiation hardened high efficiency silicon space solar cell

    International Nuclear Information System (INIS)

    Garboushian, V.; Yoon, S.; Turner, J.

    1993-01-01

    A silicon solar cell with AMO 19% Beginning of Life (BOL) efficiency is reported. The cell has demonstrated equal or better radiation resistance when compared to conventional silicon space solar cells. Conventional silicon space solar cell performance is generally ∼ 14% at BOL. The Radiation Hardened High Efficiency Silicon (RHHES) cell is thinned for high specific power (watts/kilogram). The RHHES space cell provides compatibility with automatic surface mounting technology. The cells can be easily combined to provide desired power levels and voltages. The RHHES space cell is more resistant to mechanical damage due to micrometeorites. Micro-meteorites which impinge upon conventional cells can crack the cell which, in turn, may cause string failure. The RHHES, operating in the same environment, can continue to function with a similar crack. The RHHES cell allows for very efficient thermal management which is essential for space cells generating higher specific power levels. The cell eliminates the need for electrical insulation layers which would otherwise increase the thermal resistance for conventional space panels. The RHHES cell can be applied to a space concentrator panel system without abandoning any of the attributes discussed. The power handling capability of the RHHES cell is approximately five times more than conventional space concentrator solar cells

  20. Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

    Science.gov (United States)

    Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

    2018-05-01

    Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

    International Nuclear Information System (INIS)

    Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

    2006-01-01

    We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

  2. Efficient Four-Parametric with-and-without-Memory Iterative Methods Possessing High Efficiency Indices

    Directory of Open Access Journals (Sweden)

    Alicia Cordero

    2018-01-01

    Full Text Available We construct a family of derivative-free optimal iterative methods without memory to approximate a simple zero of a nonlinear function. Error analysis demonstrates that the without-memory class has eighth-order convergence and is extendable to with-memory class. The extension of new family to the with-memory one is also presented which attains the convergence order 15.5156 and a very high efficiency index 15.51561/4≈1.9847. Some particular schemes of the with-memory family are also described. Numerical examples and some dynamical aspects of the new schemes are given to support theoretical results.

  3. Microbial electrolytic disinfection process for highly efficient Escherichia coli inactivation

    DEFF Research Database (Denmark)

    Zhou, Shaofeng; Huang, Shaobin; Li, Xiaohu

    2018-01-01

    extensively studied for recalcitrant organics removal, its application potential towards water disinfection (e.g., inactivation of pathogens) is still unknown. This study investigated the inactivation of Escherichia coli in a microbial electrolysis cell based bio-electro-Fenton system (renamed as microbial......Water quality deterioration caused by a wide variety of recalcitrant organics and pathogenic microorganisms has become a serious concern worldwide. Bio-electro-Fenton systems have been considered as cost-effective and highly efficient water treatment platform technology. While it has been......]OH was identified as one potential mechanism for disinfection. This study successfully demonstrated the feasibility of bio-electro-Fenton process for pathogens inactivation, which offers insight for the future development of sustainable, efficient, and cost-effective biological water treatment technology....

  4. Improved entropy encoding for high efficient video coding standard

    Directory of Open Access Journals (Sweden)

    B.S. Sunil Kumar

    2018-03-01

    Full Text Available The High Efficiency Video Coding (HEVC has better coding efficiency, but the encoding performance has to be improved to meet the growing multimedia applications. This paper improves the standard entropy encoding by introducing the optimized weighing parameters, so that higher rate of compression can be accomplished over the standard entropy encoding. The optimization is performed using the recently introduced firefly algorithm. The experimentation is carried out using eight benchmark video sequences and the PSNR for varying rate of data transmission is investigated. Comparative analysis based on the performance statistics is made with the standard entropy encoding. From the obtained results, it is clear that the originality of the decoded video sequence is preserved far better than the proposed method, though the compression rate is increased. Keywords: Entropy, Encoding, HEVC, PSNR, Compression

  5. Study on a Novel High-Efficiency Bridgeless PFC Converter

    Directory of Open Access Journals (Sweden)

    Cao Taiqiang

    2014-01-01

    Full Text Available In order to implement a high-efficiency bridgeless power factor correction converter, a new topology and operation principles of continuous conduction mode (CCM and DC steady-state character of the converter are analyzed, which show that the converter not only has bipolar-gain characteristic but also has the same characteristic as the traditional Boost converter, while the voltage transfer ratio is not related with the resonant branch parameters and switching frequency. Based on the above topology, a novel bridgeless Bipolar-Gain Pseudo-Boost PFC converter is proposed. With this converter, the diode rectifier bridge of traditional AC-DC converter is eliminated, and zero-current switching of fast recovery diode is achieved. Thus, the efficiency is improved. Next, we also propose the one-cycle control policy of this converter. Finally, experiments are provided to verify the accuracy and feasibility of the proposed converter.

  6. Highly Efficient and Reliable Transparent Electromagnetic Interference Shielding Film.

    Science.gov (United States)

    Jia, Li-Chuan; Yan, Ding-Xiang; Liu, Xiaofeng; Ma, Rujun; Wu, Hong-Yuan; Li, Zhong-Ming

    2018-04-11

    Electromagnetic protection in optoelectronic instruments such as optical windows and electronic displays is challenging because of the essential requirements of a high optical transmittance and an electromagnetic interference (EMI) shielding effectiveness (SE). Herein, we demonstrate the creation of an efficient transparent EMI shielding film that is composed of calcium alginate (CA), silver nanowires (AgNWs), and polyurethane (PU), via a facile and low-cost Mayer-rod coating method. The CA/AgNW/PU film with a high optical transmittance of 92% achieves an EMI SE of 20.7 dB, which meets the requirements for commercial shielding applications. A superior EMI SE of 31.3 dB could be achieved, whereas the transparent film still maintains a transmittance of 81%. The integrated efficient EMI SE and high transmittance are superior to those of most previously reported transparent EMI shielding materials. Moreover, our transparent films exhibit a highly reliable shielding ability in a complex service environment, with 98 and 96% EMI SE retentions even after 30 min of ultrasound treatment and 5000 bending cycles (1.5 mm radius), respectively. The comprehensive performance that is associated with the facile fabrication strategy imparts the CA/AgNW/PU film with great potential as an optimized EMI shielding material in emerging optoelectronic devices, such as flexible solar cells, displays, and touch panels.

  7. Research & Implementation of AC - DC Converter with High Power Factor & High Efficiency

    Directory of Open Access Journals (Sweden)

    Hsiou-Hsian Nien

    2014-05-01

    Full Text Available In this paper, we design and develop a high power factor, high efficiency two-stage AC - DC power converter. This paper proposes a two-stage AC - DC power converter. The first stage is boost active power factor correction circuit. The latter stage is near constant frequency LLC resonant converter. In addition to traditional LLC high efficiency advantages, light-load conversion efficiency of this power converter can be improved. And it possesses high power factor and near constant frequency operating characteristics, can significantly reduce the electromagnetic interference. This paper first discusses the main structure and control manner of power factor correction circuit. And then by the LLC resonant converter equivalent model proceed to circuit analysis to determine the important parameters of the converter circuit elements. Then design a variable frequency resonant tank. The resonant frequency can change automatically on the basis of the load to reach near constant frequency operation and a purpose of high efficiency. Finally, actually design and produce an AC – DC power converter with output of 190W to verify the characteristics and feasibility of this converter. The experimental results show that in a very light load (9.5 W the efficiency is as high as 81%, the highest efficiency of 88% (90 W. Full load efficiency is 87%. At 19 W ~ 190 W power changes, the operating frequency change is only 0.4 kHz (AC 110 V and 0.3 kHz (AC 220 V.

  8. Approaches to achieve high grain yield and high resource use efficiency in rice

    Directory of Open Access Journals (Sweden)

    Jianchang YANG

    2015-06-01

    Full Text Available This article discusses approaches to simultaneously increase grain yield and resource use efficiency in rice. Breeding nitrogen efficient cultivars without sacrificing rice yield potential, improving grain fill in later-flowering inferior spikelets and enhancing harvest index are three important approaches to achieving the dual goal of high grain yield and high resource use efficiency. Deeper root distribution and higher leaf photosynthetic N use efficiency at lower N rates could be used as selection criteria to develop N-efficient cultivars. Enhancing sink activity through increasing sugar-spikelet ratio at the heading time and enhancing the conversion efficiency from sucrose to starch though increasing the ratio of abscisic acid to ethylene in grains during grain fill could effectively improve grain fill in inferior spikelets. Several practices, such as post-anthesis controlled soil drying, an alternate wetting and moderate soil drying regime during the whole growing season, and non-flooded straw mulching cultivation, could substantially increase grain yield and water use efficiency, mainly via enhanced remobilization of stored carbon from vegetative tissues to grains and improved harvest index. Further research is needed to understand synergistic interaction between water and N on crop and soil and the mechanism underlying high resource use efficiency in high-yielding rice.

  9. High efficiency electrophosphorescence from bilayer organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Minghang; Lin, Ming-Te; Shepherd, Nigel D [Department of Material Science and Engineering, University of North Texas, Denton, TX (United States); Chen, Wei-Hsuan; Oswald, Iain; Omary, Mohammad [Department of Chemeistry, University of North Texas, Denton, TX (United States)

    2011-09-14

    An electron mobility of 2.7 x 10{sup -5} cm{sup 2} V{sup -1} s{sup -1} was measured for the phosphorescent emitter bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II)(Pt(ptp)2), which prompted its evaluation as both the emissive layer and electron transport layer in organic light emitting diodes with a simple bilayer structure. Power and external quantum efficiencies of 54.0 {+-} 0.2 lm W{sup -1} and 15.9% were obtained, which as far as we could ascertain are amongst the highest reported values for bilayer devices. We ascribe the high device efficiency to the combination of the high electron mobility, short excited-state lifetime (117 ns) and high luminescence quantum yield (60%) of the bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II). The colour temperature of the devices was 2855 K at 5 V, which places the emission in the 'warm' light spectral region.

  10. Detecting Android Malwares with High-Efficient Hybrid Analyzing Methods

    Directory of Open Access Journals (Sweden)

    Yu Liu

    2018-01-01

    Full Text Available In order to tackle the security issues caused by malwares of Android OS, we proposed a high-efficient hybrid-detecting scheme for Android malwares. Our scheme employed different analyzing methods (static and dynamic methods to construct a flexible detecting scheme. In this paper, we proposed some detecting techniques such as Com+ feature based on traditional Permission and API call features to improve the performance of static detection. The collapsing issue of traditional function call graph-based malware detection was also avoided, as we adopted feature selection and clustering method to unify function call graph features of various dimensions into same dimension. In order to verify the performance of our scheme, we built an open-access malware dataset in our experiments. The experimental results showed that the suggested scheme achieved high malware-detecting accuracy, and the scheme could be used to establish Android malware-detecting cloud services, which can automatically adopt high-efficiency analyzing methods according to the properties of the Android applications.

  11. High efficiency thermal energy storage system for utility applications

    International Nuclear Information System (INIS)

    Vrable, D.L.; Quade, R.N.

    1979-01-01

    A concept of coupling a high efficiency base loaded coal or nuclear power plant with a thermal energy storage scheme for efficient and low-cost intermediate and peaking power is presented. A portion of the power plant's thermal output is used directly to generate superheated steam for continuous operation of a conventional turbine-generator to product base-load power. The remaining thermal output is used on a continuous basis to heat a conventional heat transfer salt (such as the eutectic composition of KaNO 3 /NaNO 3 /NaNO 2 ), which is stored in a high-temperature reservoir [538 0 C (1000 0 F)]. During peak demand periods, the salt is circulated from the high-temperature reservoir to a low-temperature reservoir through steam generators in order to provide peaking power from a conventional steam cycle plant. The period of operation can vary, but may typically be the equivalent of about 4 to 8 full-power hours each day. The system can be tailored to meet the utilities' load demand by varying the base-load level and the period of operation of the peak-load system

  12. High-efficiency target-ion sources for RIB generation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1993-01-01

    A brief review is given of high-efficiency ion sources which have been developed or are under development at ISOL facilities which show particular promise for use at existing, future, or radioactive ion beam (RIB) facilities now under construction. Emphasis will be placed on those sources which have demonstrated high ionization efficiency, species versatility, and operational reliability and which have been carefully designed for safe handling in the high level radioactivity radiation fields incumbent at such facilities. Brief discussions will also be made of the fundamental processes which affect the realizable beam intensities in target-ion sources. Among the sources which will be reviewed will be selected examples of state-of-the-art electron-beam plasma-type ion sources, thermal-ionization, surface-ionization, ECR, and selectively chosen ion source concepts which show promise for radioactive ion beam generation. A few advanced, chemically selective target-ion sources will be described, such as sources based on the use of laser-resonance ionization, which, in principle, offer a more satisfactory solution to isobaric contamination problems than conventional electromagnetic techniques. Particular attention will be given to the sources which have been selected for initial or future use at the Holifield Radioactive Ion Beam Facility now under construction at the Oak Ridge National Laboratory

  13. The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

    International Nuclear Information System (INIS)

    Selvig, E; Myrvaagnes, G; Bugge, R; Haakenaasen, R; Fimland, B O

    2006-01-01

    Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed to Sb x (x=1, 2) and As 2 fluxes. The structures have been studied using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL). The As content in the interface layers has been found to have a large impact on the HRXRD curves. The As content in the interface layers has been determined by simulation of HRXRD rocking curves. We also show how highly strained interfaces cause more satellite peaks to appear in HRXRD rocking curves. PL spectra show that interrupting growth at the interfaces between wells and barriers and exposing the interfaces to an Sb soak result in flatter interfaces

  14. Highly Efficient and Reproducible Nonfullerene Solar Cells from Hydrocarbon Solvents

    KAUST Repository

    Wadsworth, Andrew; Ashraf, Raja; Abdelsamie, Maged; Pont, Sebastian; Little, Mark; Moser, Maximilian; Hamid, Zeinab; Neophytou, Marios; Zhang, Weimin; Amassian, Aram; Durrant, James R.; Baran, Derya; McCulloch, Iain

    2017-01-01

    With chlorinated solvents unlikely to be permitted for use in solution-processed organic solar cells in industry, there must be a focus on developing nonchlorinated solvent systems. Here we report high-efficiency devices utilizing a low-bandgap donor polymer (PffBT4T-2DT) and a nonfullerene acceptor (EH-IDTBR) from hydrocarbon solvents and without using additives. When mesitylene was used as the solvent, rather than chlorobenzene, an improved power conversion efficiency (11.1%) was achieved without the need for pre- or post-treatments. Despite altering the processing conditions to environmentally friendly solvents and room-temperature coating, grazing incident X-ray measurements confirmed that active layers processed from hydrocarbon solvents retained the robust nanomorphology obtained with hot-processed chlorinated solvents. The main advantages of hydrocarbon solvent-processed devices, besides the improved efficiencies, were the reproducibility and storage lifetime of devices. Mesitylene devices showed better reproducibility and shelf life up to 4000 h with PCE dropping by only 8% of its initial value.

  15. Highly efficient solar-pumped Nd:YAG laser.

    Science.gov (United States)

    Liang, Dawei; Almeida, Joana

    2011-12-19

    The recent progress in solar-pumped laser with Fresnel lens and Cr:Nd:YAG ceramic medium has revitalized solar laser researches, revealing a promising future for renewable reduction of magnesium from magnesium oxide. Here we show a big advance in solar laser collection efficiency by utilizing an economical Fresnel lens and a most widely used Nd:YAG single-crystal rod. The incoming solar radiation from the sun is focused by a 0.9 m diameter Fresnel lens. A dielectric totally internally reflecting secondary concentrator is employed to couple the concentrated solar radiation from the focal zone to a 4 mm diameter Nd:YAG rod within a conical pumping cavity. 12.3 W cw laser power is produced, corresponding to 19.3 W/m(2) collection efficiency, which is 2.9 times larger than the previous results with Nd:YAG single-crystal medium. Record-high slope efficiency of 3.9% is also registered. Laser beam quality is considerably improved by pumping a 3 mm diameter Nd:YAG rod.

  16. EUROGAM: A high efficiency escape suppressed spectrometer array

    Energy Technology Data Exchange (ETDEWEB)

    Nolan, P J [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

    1992-08-01

    EUROGAM is a UK-France collaboration to develop and build a high efficiency escape suppressed spectrometer array. The project has involved the development of both germanium (Ge) and bismuth germanate (BGO) detectors to produce crystals which are both bigger and have a more complex geometry. As a major investment for the future, the collaboration has developed a new electronics and data acquisition system based on the VXI and VME standards. The array will start its experimental programme in mid 1992 at the Nuclear Structure Facility at Daresbury, U.K. At this stage it will have a total photopeak efficiency (for 1.33 MeV gamma-rays) of {approx} 4.5%. This will give an improvement in sensitivity (relative to presently operating arrays) of a factor of about 10. When EUROGAM moves to France in mid 1993 its photopeak efficiency will have increased to about 8.5% which will result in an increase in sensitivity of a further factor of about 10. In this article I will concentrate on the array which will operate at Daresbury in 1992 and only briefly cover the developments which will take place for the full array before it is used in France in 1993. (author). 13 refs., 2 tabs., 10 figs.

  17. High-efficiency integrated piezoelectric energy harvesting systems

    Science.gov (United States)

    Hande, Abhiman; Shah, Pradeep

    2010-04-01

    This paper describes hierarchically architectured development of an energy harvesting (EH) system that consists of micro and/or macro-scale harvesters matched to multiple components of remote wireless sensor and communication nodes. The micro-scale harvesters consist of thin-film MEMS piezoelectric cantilever arrays and power generation modules in IC-like form to allow efficient EH from vibrations. The design uses new high conversion efficiency thin-film processes combined with novel cantilever structures tuned to multiple resonant frequencies as broadband arrays. The macro-scale harvesters are used to power the collector nodes that have higher power specifications. These bulk harvesters can be integrated with efficient adaptive power management circuits that match transducer impedance and maximize power harvested from multiple scavenging sources with very low intrinsic power consumption. Texas MicroPower, Inc. is developing process based on a composition that has the highest reported energy density as compared to other commercially available bulk PZT-based sensor/actuator ceramic materials and extending it to thin-film materials and miniature conversion transducer structures. The multiform factor harvesters can be deployed for several military and commercial applications such as underground unattended sensors, sensors in oil rigs, structural health monitoring, supply chain management, and battlefield applications such as sensors on soldier apparel, equipment, and wearable electronics.

  18. Highly Efficient and Reproducible Nonfullerene Solar Cells from Hydrocarbon Solvents

    KAUST Repository

    Wadsworth, Andrew

    2017-06-01

    With chlorinated solvents unlikely to be permitted for use in solution-processed organic solar cells in industry, there must be a focus on developing nonchlorinated solvent systems. Here we report high-efficiency devices utilizing a low-bandgap donor polymer (PffBT4T-2DT) and a nonfullerene acceptor (EH-IDTBR) from hydrocarbon solvents and without using additives. When mesitylene was used as the solvent, rather than chlorobenzene, an improved power conversion efficiency (11.1%) was achieved without the need for pre- or post-treatments. Despite altering the processing conditions to environmentally friendly solvents and room-temperature coating, grazing incident X-ray measurements confirmed that active layers processed from hydrocarbon solvents retained the robust nanomorphology obtained with hot-processed chlorinated solvents. The main advantages of hydrocarbon solvent-processed devices, besides the improved efficiencies, were the reproducibility and storage lifetime of devices. Mesitylene devices showed better reproducibility and shelf life up to 4000 h with PCE dropping by only 8% of its initial value.

  19. A High Efficiency PSOFC/ATS-Gas Turbine Power System

    Energy Technology Data Exchange (ETDEWEB)

    W.L. Lundberg; G.A. Israelson; M.D. Moeckel; S.E. Veyo; R.A. Holmes; P.R. Zafred; J.E. King; R.E. Kothmann

    2001-02-01

    A study is described in which the conceptual design of a hybrid power system integrating a pressurized Siemens Westinghouse solid oxide fuel cell generator and the Mercury{trademark} 50 gas turbine was developed. The Mercury{trademark} 50 was designed by Solar Turbines as part of the US. Department of Energy Advanced Turbine Systems program. The focus of the study was to develop the hybrid power system concept that principally would exhibit an attractively-low cost of electricity (COE). The inherently-high efficiency of the hybrid cycle contributes directly to achieving this objective, and by employing the efficient, power-intensive Mercury{trademark} 50, with its relatively-low installed cost, the higher-cost SOFC generator can be optimally sized such that the minimum-COE objective is achieved. The system cycle is described, major system components are specified, the system installed cost and COE are estimated, and the physical arrangement of the major system components is discussed. Estimates of system power output, efficiency, and emissions at the system design point are also presented. In addition, two bottoming cycle options are described, and estimates of their effects on overall-system performance, cost, and COE are provided.

  20. EUROGAM: A high efficiency escape suppressed spectrometer array

    International Nuclear Information System (INIS)

    Nolan, P.J.

    1992-01-01

    EUROGAM is a UK-France collaboration to develop and build a high efficiency escape suppressed spectrometer array. The project has involved the development of both germanium (Ge) and bismuth germanate (BGO) detectors to produce crystals which are both bigger and have a more complex geometry. As a major investment for the future, the collaboration has developed a new electronics and data acquisition system based on the VXI and VME standards. The array will start its experimental programme in mid 1992 at the Nuclear Structure Facility at Daresbury, U.K. At this stage it will have a total photopeak efficiency (for 1.33 MeV gamma-rays) of ∼ 4.5%. This will give an improvement in sensitivity (relative to presently operating arrays) of a factor of about 10. When EUROGAM moves to France in mid 1993 its photopeak efficiency will have increased to about 8.5% which will result in an increase in sensitivity of a further factor of about 10. In this article I will concentrate on the array which will operate at Daresbury in 1992 and only briefly cover the developments which will take place for the full array before it is used in France in 1993. (author). 13 refs., 2 tabs., 10 figs

  1. Cascade: a high-efficiency ICF power reactor

    International Nuclear Information System (INIS)

    Pitts, J.H.

    1985-01-01

    Cascade attains a net power-plant efficiency of 49% and its cost is competitive with high-temperature gas-cooled reactor, pressurized-water reactor, and coal-fired power plants. The Cascade reactor and blanket are made of ceramic materials and activation is 6 times less than that of the MARS Tandem Mirror Reactor operating at comparable power. Hands-on maintenance of the heat exchangers is possible one day after shutdown. Essentially all tritium is recovered in the vacuum system, with the remainder recovered from the helium power conversion loop. Tritium leakage external to the vacuum system and power conversion loop is only 0.03 Ci/d

  2. High-efficiency ventilated metamaterial absorber at low frequency

    Science.gov (United States)

    Wu, Xiaoxiao; Au-Yeung, Ka Yan; Li, Xin; Roberts, Robert Christopher; Tian, Jingxuan; Hu, Chuandeng; Huang, Yingzhou; Wang, Shuxia; Yang, Zhiyu; Wen, Weijia

    2018-03-01

    We demonstrate a ventilated metamaterial absorber operating at low frequency (90%) has been achieved in both simulations and experiments. This high-efficiency absorption under the ventilation condition originates from the weak coupling of two identical split tube resonators constituting the absorber, which leads to the hybridization of the degenerate eigenmodes and breaks the absorption upper limit of 50% for conventional transmissive symmetric acoustic absorbers. The absorber can also be extended to an array and work in free space. The absorber should have potential applications in acoustic engineering where both noise reduction and ventilation are required.

  3. Polarization holograms allow highly efficient generation of complex light beams.

    Science.gov (United States)

    Ruiz, U; Pagliusi, P; Provenzano, C; Volke-Sepúlveda, K; Cipparrone, Gabriella

    2013-03-25

    We report a viable method to generate complex beams, such as the non-diffracting Bessel and Weber beams, which relies on the encoding of amplitude information, in addition to phase and polarization, using polarization holography. The holograms are recorded in polarization sensitive films by the interference of a reference plane wave with a tailored complex beam, having orthogonal circular polarizations. The high efficiency, the intrinsic achromaticity and the simplicity of use of the polarization holograms make them competitive with respect to existing methods and attractive for several applications. Theoretical analysis, based on the Jones formalism, and experimental results are shown.

  4. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  5. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R.; Storm, David F.; Meyer, David J.; Zhang, Weidong; Brown, Elliott R.

    2016-01-01

    AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm 2 and a peak-to-valley current ratio of ≈1.15 across different sizes.

  6. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Storm, David F.; Meyer, David J. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Zhang, Weidong; Brown, Elliott R. [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)

    2016-08-22

    AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

  7. High efficiency power production from biomass and waste

    Energy Technology Data Exchange (ETDEWEB)

    Rabou, L.P.L.M.; Van Leijenhorst, R.J.C.; Hazewinkel, J.H.O. [ECN Biomass, Coal and Environment, Petten (Netherlands)

    2008-11-15

    Two-stage gasification allows power production from biomass and waste with high efficiency. The process involves pyrolysis at about 550C followed by heating of the pyrolysis gas to about 1300C in order to crack hydrocarbons and obtain syngas, a mixture of H2, CO, H2O and CO2. The second stage produces soot as unwanted by-product. Experimental results are reported on the suppression of soot formation in the second stage for two different fuels: beech wood pellets and Rofire pellets, made from rejects of paper recycling. Syngas obtained from these two fuels and from an industrial waste fuel has been cleaned and fed to a commercial SOFC stack for 250 hours in total. The SOFC stack showed comparable performance on real and synthetic syngas and no signs of accelerated degradation in performance over these tests. The experimental results have been used for the design and analysis of a future 25 MWth demonstration plant. As an alternative, a 2.6 MWth system was considered which uses the Green MoDem approach to convert waste fuel into bio-oil and syngas. The 25 MWth system can reach high efficiency only if char produced in the pyrolysis step is converted into additional syngas by steam gasification, and if SOFC off-gas and system waste heat are used in a steam bottoming cycle for additional power production. A net electrical efficiency of 38% is predicted. In addition, heat can be delivered with 37% efficiency. The 2.6 MWth system with only a dual fuel engine to burn bio-oil and syngas promises nearly 40% electrical efficiency plus 41% efficiency for heat production. If syngas is fed to an SOFC system and off-gas and bio-oil to a dual fuel engine, the electrical efficiency can rise to 45%. However, the efficiency for heat production drops to 15%, as waste heat from the SOFC system cannot be used effectively. The economic analysis makes clear that at -20 euro/tonne fuel, 70 euro/MWh for electricity and 7 euro/GJ for heat the 25 MWth system is not economically viable at the

  8. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

    2015-01-01

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

  9. Wet-etching induced abnormal phase transition in highly strained VO{sub 2}/TiO{sub 2} (001) epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Hui; Chen, Shi; Chen, Yuliang; Luo, Zhenlin; Zhou, Jingtian; Zheng, Xusheng; Wang, Liangxin; Li, Bowen; Zou, Chongwen [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei (China)

    2018-01-15

    The metal-insulator transition (MIT) behavior in vanadium dioxide (VO{sub 2}) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO{sub 2}/TiO{sub 2} (001) system, there exists a considerable strain in ultra-thin VO{sub 2} thin film, which shows a lower T{sub c} value close to room temperature. As the VO{sub 2} epitaxial film grows thicker layer-by-layer along the ''bottom-up'' route, the strain will be gradually relaxed and T{sub c} will increase as well, until the MIT behavior becomes the same as that of bulk material with a T{sub c} of about 68 C. Whereas, in this study, we find that the VO{sub 2}/TiO{sub 2} (001) film thinned by ''top-down'' wet-etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO{sub 2} film is etched up to several nanometers, the MIT persists, and T{sub c} will increase up to that of bulk material, showing the trend to a stress-free ultra-thin VO{sub 2} film. The current findings demonstrate a facial chemical-etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO{sub 2} films, which can also be applied to other strained oxide films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Next generation of high-efficient waste incinerators. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Jappe Frandsen, F.

    2010-11-15

    Modern society produces increasing amounts of combustible waste which may be utilized for heat and power production, at a lower emission of CO{sub 2}, e.g. by substituting a certain fraction of energy from fossil fuel-fired power stations. In 2007, 20.4 % of the district heating and 4.5 % of the power produced in Denmark came from thermal conversion of waste, and waste is a very important part of a future sustainable, and independent, Danish energy supply [Frandsen et al., 2009; Groen Energi, 2010]. In Denmark, approx 3.3 Mtons of waste was produced in 2005, an amount predicted to increase to 4.4 Mtons by the year 2030. According to Affald Danmark, 25 % of the current WtE plant capacity in Denmark is older than 20 years, which is usually considered as the technical and economical lifetime of WtE plants. Thus, there is a need for installation of a significant fraction of new waste incineration capacity, preferentially with an increased electrical efficiency, within the next few years. Compared to fossil fuels, waste is difficult to handle in terms of pre-treatment, combustion, and generation of reusable solid residues. In particular, the content of inorganic species (S, Cl, K, Na, etc.) is problematic, due to enhanced deposition and corrosion - especially at higher temperatures. This puts severe constraints on the electrical efficiency of grate-fired units utilizing waste, which seldom exceeds 26-27%, campared to 46-48 % for coal combustion in suspension. The key parameters when targeting higher electrical efficiency are the pressure and temperature in the steam cycle, which are limited by high-temperature corrosion, boiler- and combustion-technology. This report reviews some of the means that can be applied in order to increase the electrical efficiency in plants firing waste on a grate. (Author)

  11. Advances in a high efficiency commercial pulse tube cooler

    Science.gov (United States)

    Zhang, Yibing; Li, Haibing; Wang, Xiaotao; Dai, Wei; Yang, Zhaohui; Luo, Ercang

    2017-12-01

    The pulse tube cryocooler has the advantage of no moving part at the cold end and offers a high reliability. To further extend its use in commercial applications, efforts are still needed to improve efficiency, reliability and cost effectiveness. This paper generalizes several key innovations in our newest cooler. The cooler consists of a moving magnet compressor with dual-opposed pistons, and a co-axial cold finger. Ambient displacers are employed to recover the expansion work to increase cooling efficiency. Inside the cold finger, the conventional flow straightener screens are replaced by a tapered throat between the cold heat exchanger and the pulse tube to strengthen its immunity to the working gas contamination as well as to simplify the manufacturing processes. The cold heat exchanger is made by copper forging process which further reduces the cost. Inside the compressor, a new gas bearing design has brought in assembling simplicity and running reliability. Besides the cooler itself, electronic controller is also important for actual application. A dual channel and dual driving mode control mechanism has been selected, which reduces the vibration to a minimum, meanwhile the cool-down speed becomes faster and run-time efficiency is higher. With these innovations, the cooler TC4189 reached a no-load temperature of 44 K and provided 15 W cooling power at 80K, with an input electric power of 244 W and a cooling water temperature of 23 ℃. The efficiency reached 16.9% of Carnot at 80 K. The whole system has a total mass of 4.3 kg.

  12. Hexagonal boron nitride neutron detectors with high detection efficiencies

    Science.gov (United States)

    Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2018-01-01

    Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

  13. High efficiency, multiterawatt x-ray free electron lasers

    Directory of Open Access Journals (Sweden)

    C. Emma

    2016-02-01

    Full Text Available In this paper we present undulator magnet tapering methods for obtaining high efficiency and multiterawatt peak powers in x-ray free electron lasers (XFELs, a key requirement for enabling 3D atomic resolution single molecule imaging and nonlinear x-ray science. The peak power and efficiency of tapered XFELs is sensitive to time dependent effects, like synchrotron sideband growth. To analyze this dependence in detail we perform a comparative numerical optimization for the undulator magnetic field tapering profile including and intentionally disabling these effects. We show that the solution for the magnetic field taper profile obtained from time independent optimization does not yield the highest extraction efficiency when time dependent effects are included. Our comparative optimization is performed for a novel undulator designed specifically to obtain TW power x-ray pulses in the shortest distance: superconducting, helical, with short period and built-in strong focusing. This design reduces the length of the breaks between modules, decreasing diffraction effects, and allows using a stronger transverse electron focusing. Both effects reduce the gain length and the overall undulator length. We determine that after a fully time dependent optimization of a 100 m long Linac coherent light source-like XFEL we can obtain a maximum efficiency of 7%, corresponding to 3.7 TW peak radiation power. Possible methods to suppress the synchrotron sidebands, and further enhance the FEL peak power, up to about 6 TW by increasing the seed power and reducing the electron beam energy spread, are also discussed.

  14. HIGH EFFICIENCY GENERATION OF HYDROGEN FUELS USING NUCLEAR POWER

    Energy Technology Data Exchange (ETDEWEB)

    BROWN,LC; BESENBRUCH,GE; LENTSCH,RD; SCHULTZ,KR; FUNK,JF; PICKARD,PS; MARSHALL,AC; SHOWALTER,SK

    2003-06-01

    OAK B202 HIGH EFFICIENCY GENERATION OF HYDROGEN FUELS USING NUCLEAR POWER. Combustion of fossil fuels, used to power transportation, generate electricity, heat homes and fuel industry provides 86% of the world's energy. Drawbacks to fossil fuel utilization include limited supply, pollution, and carbon dioxide emissions. Carbon dioxide emissions, thought to be responsible for global warming, are now the subject of international treaties. Together, these drawbacks argue for the replacement of fossil fuels with a less-polluting potentially renewable primary energy such as nuclear energy. Conventional nuclear plants readily generate electric power but fossil fuels are firmly entrenched in the transportation sector. Hydrogen is an environmentally attractive transportation fuel that has the potential to displace fossil fuels. Hydrogen will be particularly advantageous when coupled with fuel cells. Fuel cells have higher efficiency than conventional battery/internal combustion engine combinations and do not produce nitrogen oxides during low-temperature operation. Contemporary hydrogen production is primarily based on fossil fuels and most specifically on natural gas. When hydrogen is produced using energy derived from fossil fuels, there is little or no environmental advantage. There is currently no large scale, cost-effective, environmentally attractive hydrogen production process available for commercialization, nor has such a process been identified. The objective of this work is to find an economically feasible process for the production of hydrogen, by nuclear means, using an advanced high-temperature nuclear reactor as the primary energy source. Hydrogen production by thermochemical water-splitting (Appendix A), a chemical process that accomplishes the decomposition of water into hydrogen and oxygen using only heat or, in the case of a hybrid thermochemical process, by a combination of heat and electrolysis, could meet these goals. Hydrogen produced from

  15. The analysis of energy efficiency in water electrolysis under high temperature and high pressure

    Science.gov (United States)

    Hourng, L. W.; Tsai, T. T.; Lin, M. Y.

    2017-11-01

    This paper aims to analyze the energy efficiency of water electrolysis under high pressure and high temperature conditions. The effects of temperature and pressure on four different kinds of reaction mechanisms, namely, reversible voltage, activation polarization, ohmic polarization, and concentration polarization, are investigated in details. Results show that the ohmic and concentration over-potentials are increased as temperature is increased, however, the reversible and activation over-potentials are decreased as temperature is increased. Therefore, the net efficiency is enhanced as temperature is increased. The efficiency of water electrolysis at 350°C/100 bars is increased about 17%, compared with that at 80°C/1bar.

  16. High-Order Dielectric Metasurfaces for High-Efficiency Polarization Beam Splitters and Optical Vortex Generators

    Science.gov (United States)

    Guo, Zhongyi; Zhu, Lie; Guo, Kai; Shen, Fei; Yin, Zhiping

    2017-08-01

    In this paper, a high-order dielectric metasurface based on silicon nanobrick array is proposed and investigated. By controlling the length and width of the nanobricks, the metasurfaces could supply two different incremental transmission phases for the X-linear-polarized (XLP) and Y-linear-polarized (YLP) light with extremely high efficiency over 88%. Based on the designed metasurface, two polarization beam splitters working in high-order diffraction modes have been designed successfully, which demonstrated a high transmitted efficiency. In addition, we have also designed two vortex-beam generators working in high-order diffraction modes to create vortex beams with the topological charges of 2 and 3. The employment of dielectric metasurfaces operating in high-order diffraction modes could pave the way for a variety of new ultra-efficient optical devices.

  17. A critical study of high efficiency deep grinding

    International Nuclear Information System (INIS)

    Johnstone, Iain

    2002-01-01

    The recent years, the aerospace industry in particular has embraced and actively pursued the development of stronger high performance materials, namely nickel based superalloys and hardwearing steels. This has resulted in a need for a more efficient method of machining, and this need was answered with the advent of High Efficiency Deep Grinding (HEDG). This relatively new process using Cubic Boron Nitride (CBN) electroplated grinding wheels has been investigated through experimental and theoretical means applied to two widely used materials, M50 bearing steel and IN718 nickel based superalloy. It has been shown that this grinding method using a stiff grinding centre such as the Edgetek 5-axis machine is a viable process. Using a number of experimental designs, produced results which were analysed using a variety of methods including visual assessment, sub-surface microscopy and surface analysis using a Scanning Electron Microscope (SEM), residual stress measurement using X-Ray Diffraction (XRD) techniques, Barkhausen Noise Amplitude (BNA) measurements, surface roughness and Vickers micro-hardness appraisal. It has been shown that the fundamentals of the HEDG process have been understood through experimental as well as theoretical means and that through the various thermal models used, grinding temperatures can be predicted to give more control over this dynamic process. The main contributions to knowledge are made up of a number of elements within the grinding environment, the most important being the demonstration of the HEDG effect, explanation of the phenomenon and the ability to model the process. It has also been shown that grinding is a dynamic process and factors such as wheel wear will result in a continuous change in the optimum grinding conditions for a given material and wheel combination. With the significance of these factors recognised, they can be accounted for within an industrial adaptive control scenario with the process engineer confident of a

  18. MXene molecular sieving membranes for highly efficient gas separation.

    Science.gov (United States)

    Ding, Li; Wei, Yanying; Li, Libo; Zhang, Tao; Wang, Haihui; Xue, Jian; Ding, Liang-Xin; Wang, Suqing; Caro, Jürgen; Gogotsi, Yury

    2018-01-11

    Molecular sieving membranes with sufficient and uniform nanochannels that break the permeability-selectivity trade-off are desirable for energy-efficient gas separation, and the arising two-dimensional (2D) materials provide new routes for membrane development. However, for 2D lamellar membranes, disordered interlayer nanochannels for mass transport are usually formed between randomly stacked neighboring nanosheets, which is obstructive for highly efficient separation. Therefore, manufacturing lamellar membranes with highly ordered nanochannel structures for fast and precise molecular sieving is still challenging. Here, we report on lamellar stacked MXene membranes with aligned and regular subnanometer channels, taking advantage of the abundant surface-terminating groups on the MXene nanosheets, which exhibit excellent gas separation performance with H 2 permeability >2200 Barrer and H 2 /CO 2 selectivity >160, superior to the state-of-the-art membranes. The results of molecular dynamics simulations quantitatively support the experiments, confirming the subnanometer interlayer spacing between the neighboring MXene nanosheets as molecular sieving channels for gas separation.

  19. High efficiency video coding coding tools and specification

    CERN Document Server

    Wien, Mathias

    2015-01-01

    The video coding standard High Efficiency Video Coding (HEVC) targets at improved compression performance for video resolutions of HD and beyond, providing Ultra HD video at similar compressed bit rates as for HD video encoded with the well-established video coding standard H.264 | AVC. Based on known concepts, new coding structures and improved coding tools have been developed and specified in HEVC. The standard is expected to be taken up easily by established industry as well as new endeavors, answering the needs of todays connected and ever-evolving online world. This book presents the High Efficiency Video Coding standard and explains it in a clear and coherent language. It provides a comprehensive and consistently written description, all of a piece. The book targets at both, newbies to video coding as well as experts in the field. While providing sections with introductory text for the beginner, it suits as a well-arranged reference book for the expert. The book provides a comprehensive reference for th...

  20. Large-area high-efficiency flexible PHOLED lighting panels

    Science.gov (United States)

    Pang, Huiqing; Mandlik, Prashant; Levermore, Peter A.; Silvernail, Jeff; Ma, Ruiqing; Brown, Julie J.

    2012-09-01

    Organic Light Emitting Diodes (OLEDs) provide various attractive features for next generation illumination systems, including high efficiency, low power, thin and flexible form factor. In this work, we incorporated phosphorescent emitters and demonstrated highly efficient white phosphorescent OLED (PHOLED) devices on flexible plastic substrates. The 0.94 cm2 small-area device has total thickness of approximately 0.25 mm and achieved 63 lm/W at 1,000 cd/m2 with CRI = 85 and CCT = 2920 K. We further designed and fabricated a 15 cm x 15 cm large-area flexible white OLED lighting panels, finished with a hybrid single-layer ultra-low permeability single layer barrier (SLB) encapsulation film. The flexible panel has an active area of 116.4 cm2, and achieved a power efficacy of 47 lm/W at 1,000 cd/m2 with CRI = 83 and CCT = 3470 K. The efficacy of the panel at 3,000 cd/m2 is 43 lm/W. The large-area flexible PHOLED lighting panel is to bring out enormous possibilities to the future general lighting applications.

  1. Nanocoatings for High-Efficiency Industrial Hydraulic and Tooling Systems

    Energy Technology Data Exchange (ETDEWEB)

    Clifton B. Higdon III

    2011-01-07

    Industrial manufacturing in the U.S. accounts for roughly one third of the 98 quadrillion Btu total energy consumption. Motor system losses amount to 1.3 quadrillion Btu, which represents the largest proportional loss of any end-use category, while pumps alone represent over 574 trillion BTU (TBTU) of energy loss each year. The efficiency of machines with moving components is a function of the amount of energy lost to heat because of friction between contacting surfaces. The friction between these interfaces also contributes to downtime and the loss of productivity through component wear and subsequent repair. The production of new replacement parts requires additional energy. Among efforts to reduce energy losses, wear-resistant, low-friction coatings on rotating and sliding components offer a promising approach that is fully compatible with existing equipment and processes. In addition to lubrication, one of the most desirable solutions is to apply a protective coating or surface treatment to rotating or sliding components to reduce their friction coefficients, thereby leading to reduced wear. Historically, a number of materials such as diamond-like carbon (DLC), titanium nitride (TiN), titanium aluminum nitride (TiAlN), and tungsten carbide (WC) have been examined as tribological coatings. The primary objective of this project was the development of a variety of thin film nanocoatings, derived from the AlMgB14 system, with a focus on reducing wear and friction in both industrial hydraulics and cutting tool applications. Proof-of-concept studies leading up to this project had shown that the constituent phases, AlMgB14 and TiB2, were capable of producing low-friction coatings by pulsed laser deposition. These coatings combine high hardness with a low friction coefficient, and were shown to substantially reduce wear in laboratory tribology tests. Selection of the two applications was based largely on the concept of improved mechanical interface efficiencies for

  2. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  3. Development and characterization of high-efficiency, high-specific impulse xenon Hall thrusters

    Science.gov (United States)

    Hofer, Richard Robert

    This dissertation presents research aimed at extending the efficient operation of 1600 s specific impulse Hall thruster technology to the 2000--3000 s range. While recent studies of commercially developed Hall thrusters demonstrated greater than 4000 s specific impulse, maximum efficiency occurred at less than 3000 s. It was hypothesized that the efficiency maximum resulted as a consequence of modern magnetic field designs, optimized for 1600 s, which were unsuitable at high-specific impulse. Motivated by the industry efforts and mission studies, the aim of this research was to develop and characterize xenon Hall thrusters capable of both high-specific impulse and high-efficiency operation. The research divided into development and characterization phases. During the development phase, the laboratory-model NASA-173M Hall thrusters were designed with plasma lens magnetic field topographies and their performance and plasma characteristics were evaluated. Experiments with the NASA-173M version 1 (v1) validated the plasma lens design by showing how changing the magnetic field topography at high-specific impulse improved efficiency. Experiments with the NASA-173M version 2 (v2) showed there was a minimum current density and optimum magnetic field topography at which efficiency monotonically increased with voltage. Between 300--1000 V, total specific impulse and total efficiency of the NASA-173Mv2 operating at 10 mg/s ranged from 1600--3400 s and 51--61%, respectively. Comparison of the thrusters showed that efficiency can be optimized for specific impulse by varying the plasma lens design. During the characterization phase, additional plasma properties of the NASA-173Mv2 were measured and a performance model was derived accounting for a multiply-charged, partially-ionized plasma. Results from the model based on experimental data showed how efficient operation at high-specific impulse was enabled through regulation of the electron current with the magnetic field. The

  4. Highly Efficient TADF Polymer Electroluminescence with Reduced Efficiency Roll-off via Interfacial Exciplex Host Strategy.

    Science.gov (United States)

    Lin, Xingdong; Zhu, Yunhui; Zhang, Baohua; Zhao, Xiaofei; Yao, Bing; Cheng, Yanxiang; Li, Zhanguo; Qu, Yi; Xie, Zhiyuan

    2018-01-10

    Solution-processed organic light-emitting diodes (s-OLED) consisting of TAPC/TmPyPB interfacial exciplex host and polymer PAPTC TADF emitter are prepared, simultaneously displaying ultralow voltages (2.50/2.91/3.51/4.91 V at luminance of 1/100/1000/1000 cd m -2 ), high efficiencies (14.9%, 50.1 lm W -1 ), and extremely low roll-off rates (J 50 of 63.16 mA cm -2 , L 50 of ca. 15000 cd m -2 ). Such performance is distinctly higher than that of pure-PAPTC s-OLED. Compared to pure-PAPTC, the advanced emissive layer structure of TAPC:PAPTC/TmPyPB is unique in much higher PL quantum yield (79.5 vs 36.3%) and nearly 4-fold enhancement in k RISC of the PAPTC emitter to 1.48 × 10 7 s -1 .

  5. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  6. High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe{sub 2}/MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, Horacio Coy; Ma, Yujing; Chaghi, Redhouane; Batzill, Matthias [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2016-05-09

    Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe{sub 2} monolayers on MoS{sub 2} substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic “wagon wheel” pattern with only ∼2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give the monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe{sub 2} and thus determine the band-alignment in the MoTe{sub 2}/MoS{sub 2} interface.

  7. High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

    Energy Technology Data Exchange (ETDEWEB)

    Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

    2000-07-01

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

  8. Magnetic Refrigeration Technology for High Efficiency Air Conditioning

    Energy Technology Data Exchange (ETDEWEB)

    Boeder, A; Zimm, C

    2006-09-30

    Magnetic refrigeration was investigated as an efficient, environmentally friendly, flexible alternative to conventional residential vapor compression central air conditioning systems. Finite element analysis (FEA) models of advanced geometry active magnetic regenerator (AMR) beds were developed to minimize bed size and thus magnet mass by optimizing geometry for fluid flow and heat transfer and other losses. Conventional and magnetocaloric material (MCM) regenerator fabrication and assembly techniques were developed and advanced geometry passive regenerators were built and tested. A subscale engineering prototype (SEP) magnetic air conditioner was designed, constructed and tested. A model of the AMR cycle, combined with knowledge from passive regenerator experiments and FEA results, was used to design the regenerator beds. A 1.5 Tesla permanent magnet assembly was designed using FEA and the bed structure and plenum design was extensively optimized using FEA. The SEP is a flexible magnetic refrigeration platform, with individually instrumented beds and high flow rate and high frequency capability, although the current advanced regenerator geometry beds do not meet performance expectations, probably due to manufacturing and assembly tolerances. A model of the AMR cycle was used to optimize the design of a 3 ton capacity magnetic air conditioner, and the system design was iterated to minimize external parasitic losses such as heat exchanger pressure drop and fan power. The manufacturing cost for the entire air conditioning system was estimated, and while the estimated SEER efficiency is high, the magnetic air conditioning system is not cost competitive as currently configured. The 3 ton study results indicate that there are other applications where magnetic refrigeration is anticipated to have cost advantages over conventional systems, especially applications where magnetic refrigeration, through the use of its aqueous heat transfer fluid, could eliminate intermediate

  9. High Efficiency and Low Cost Thermal Energy Storage System

    Energy Technology Data Exchange (ETDEWEB)

    Sienicki, James J. [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Lv, Qiuping [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Moisseytsev, Anton [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Bucknor, Matthew [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division

    2017-09-29

    BgtL, LLC (BgtL) is focused on developing and commercializing its proprietary compact technology for processes in the energy sector. One such application is a compact high efficiency Thermal Energy Storage (TES) system that utilizes the heat of fusion through phase change between solid and liquid to store and release energy at high temperatures and incorporate state-of-the-art insulation to minimize heat dissipation. BgtL’s TES system would greatly improve the economics of existing nuclear and coal-fired power plants by allowing the power plant to store energy when power prices are low and sell power into the grid when prices are high. Compared to existing battery storage technology, BgtL’s novel thermal energy storage solution can be significantly less costly to acquire and maintain, does not have any waste or environmental emissions, and does not deteriorate over time; it can keep constant efficiency and operates cleanly and safely. BgtL’s engineers are experienced in this field and are able to design and engineer such a system to a specific power plant’s requirements. BgtL also has a strong manufacturing partner to fabricate the system such that it qualifies for an ASME code stamp. BgtL’s vision is to be the leading provider of compact systems for various applications including energy storage. BgtL requests that all technical information about the TES designs be protected as proprietary information. To honor that request, only non-proprietay summaries are included in this report.

  10. Preliminary field evaluation of high efficiency steel filters

    Energy Technology Data Exchange (ETDEWEB)

    Bergman, W.; Larsen, G.; Lopez, R. [Lawrence Livermore National Laboratory, CA (United States)] [and others

    1995-02-01

    We have conducted an evaluation of two high efficiency steel filters in the exhaust of an uranium oxide grit blaster at the Y-12 Plant in Oak Ridge Tennessee. The filters were installed in a specially designed filter housing with a reverse air-pulse cleaning system for automatically cleaning the filters in-place. Previous tests conducted on the same filters and housing at LLNL under controlled conditions using Arizona road dust showed good cleanability with reverse air pulses. Two high efficiency steel filters, containing 64 pleated cartridge elements housed in the standard 2` x 2` x 1` HEPA frame, were evaluated in the filter test housing using a 1,000 cfm slip stream containing a high concentration of depleted uranium oxide dust. One filter had the pleated cartridges manufactured to our specifications by the Pall Corporation and the other by Memtec Corporation. Test results showed both filters had a rapid increase in pressure drop with time, and reverse air pulses could not decrease the pressure drop. We suspected moisture accumulation in the filters was the problem since there were heavy rains during the evaluations, and the pressure drop of the Memtec filter decreased dramatically after passing clean, dry air through the filter and after the filter sat idle for one week. Subsequent laboratory tests on a single filter cartridge confirmed that water accumulation in the filter was responsible for the increase in filter pressure drop and the inability to lower the pressure drop by reverse air pulses. No effort was made to identify the source of the water accumulation and correct the problem because the available funds were exhausted.

  11. A new approach to a high efficiency inductive store

    International Nuclear Information System (INIS)

    Zowarka, R.C. Jr.; Kajs, J.P.; Price, J.H.; Weldon, W.F.

    1991-01-01

    In the Spring of 1989, Parker Kinetic Design, Inc. (PKD) and the Center for Electromechanics at The University of Texas at Austin (CEM-UT) conducted a study to examine the basic technologies to be used in the construction and operation of a feasible and reliable electromagnetic (EM) gun system. This work was performed for Brown and Root Vickers, Ltd. (BRV) in response to a feasibility analysis requirement of the Royal Armament and Development Establishment (RARDE), Ministry of Defence (MD) of the United Kingdom. This paper summarizes that this study focused on the analysis and evaluation of the suitability and applicability of various pulsed power supply options for the performance goals of the RARDE EM gun program. The existing technologies considered included batteries, compulsators, capacitors, and homopolar generators (HPGs). Primary performance specifications for the electrical energy radius system were that it be capable of providing 12 MJ of muzzle energy; velocities between 2.0 and 3.5 km/s; and a repetitive shot rate of up to 10 shots per day, with no more than a 30-min interval between shots. In addition, the recommended system needed to be reliable, easily maintainable, and capable of routinely firing large numbers of shots. Strict adherence to the goal of designing a system based only on demonstrated technology results in power supplies that are prohibitively expensive and large. As a consequence, candidate system designs represent a modest extrapolation from demonstrated technology well within an acceptable design envelope. A new topology has been developed for a highly efficient inductive store suitable for pulsed-power applications. The new design features high L/R ratios without having to cryogenically cool the conductors. This allows for high efficiency charging of the inductor from low impedance dc sources such as batteries of HPGs

  12. Energy-Efficient Office Buildings at High Latitudes

    Energy Technology Data Exchange (ETDEWEB)

    Lerum, V.

    1996-12-31

    This doctoral thesis describes a method for energy efficient office building design at high latitudes and cold climates. The method combines daylighting, passive solar heating, solar protection, and ventilative cooling. The thesis focuses on optimal design of an equatorial-facing fenestration system. A spreadsheet framework linking existing simplified methods is used. The daylight analysis uses location specific data on frequency distribution of diffuse daylight on vertical surfaces to estimate energy savings from optimal window and room configurations in combination with a daylight-responsive electric lighting system. The passive solar heating analysis is a generalization of a solar load ratio method adapted to cold climates by combining it with the Norwegian standard NS3031 for winter months when the solar savings fraction is negative. The emphasis is on very high computational efficiency to permit rapid and comprehensive examination of a large number of options early in design. The procedure is illustrated for a location in Trondheim, Norway, testing the relative significance of various design improvement options relative to a base case. The method is also tested for two other locations in Norway, at latitudes 58 and 70 degrees North. The band of latitudes between these limits covers cities in Alaska, Canada, Greenland, Iceland, Scandinavia, Finland, Russia, and Northern Japan. A comprehensive study of the ``whole building approach`` shows the impact of integrated daylighting and low-energy design strategies. In general, consumption of lighting electricity may be reduced by 50-80%, even at extremely high latitudes. The reduced internal heat from electric lights is replaced by passive solar heating. 113 refs., 85 figs., 25 tabs.

  13. Molecular beam epitaxy for the future

    International Nuclear Information System (INIS)

    Takahashi, K.

    1984-01-01

    Molecular beam epitaxy (MBE) is most commonly used to fabricate super-lattices, high electron mobility transistors, multi-quantum well lasers and other new semiconductor devices by utilizing its excellent controlability. MBE for the future is presumed to include techniques such as metalorganic chemical vapor deposition, photochemical reaction process using gas sources and ion implantation. A report on the crystal growth of GaAs using metalorganics, trimethylgallium and triethylgallium, which are usually used in chemical vapor deposition, as gaseous sources of gallium in an MBE system is made. (Author) [pt

  14. Quality and efficiency in high dimensional Nearest neighbor search

    KAUST Repository

    Tao, Yufei; Yi, Ke; Sheng, Cheng; Kalnis, Panos

    2009-01-01

    Nearest neighbor (NN) search in high dimensional space is an important problem in many applications. Ideally, a practical solution (i) should be implementable in a relational database, and (ii) its query cost should grow sub-linearly with the dataset size, regardless of the data and query distributions. Despite the bulk of NN literature, no solution fulfills both requirements, except locality sensitive hashing (LSH). The existing LSH implementations are either rigorous or adhoc. Rigorous-LSH ensures good quality of query results, but requires expensive space and query cost. Although adhoc-LSH is more efficient, it abandons quality control, i.e., the neighbor it outputs can be arbitrarily bad. As a result, currently no method is able to ensure both quality and efficiency simultaneously in practice. Motivated by this, we propose a new access method called the locality sensitive B-tree (LSB-tree) that enables fast highdimensional NN search with excellent quality. The combination of several LSB-trees leads to a structure called the LSB-forest that ensures the same result quality as rigorous-LSH, but reduces its space and query cost dramatically. The LSB-forest also outperforms adhoc-LSH, even though the latter has no quality guarantee. Besides its appealing theoretical properties, the LSB-tree itself also serves as an effective index that consumes linear space, and supports efficient updates. Our extensive experiments confirm that the LSB-tree is faster than (i) the state of the art of exact NN search by two orders of magnitude, and (ii) the best (linear-space) method of approximate retrieval by an order of magnitude, and at the same time, returns neighbors with much better quality. © 2009 ACM.

  15. High Current Planar Transformer for Very High Efficiency Isolated Boost DC-DC Converters

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac-resistance a......This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac......-resistance and transformer leakage inductance. Design and optimization procedures are validated based on an experimental prototype of a 6 kW dcdc isolated full bridge boost converter developed on fully planar magnetics. The prototype is rated at 30-80 V 0-80 A on the low voltage side and 700-800 V on the high voltage side...... with a peak efficiency of 97.8% at 80 V 3.5 kW. Results highlights that thick copper windings can provide good performance at low switching frequencies due to the high transformer filling factor. PCB windings can also provide very high efficiency if stacked in parallel utilizing the transformer winding window...

  16. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  17. In-situ high efficiency filter testing at AEE Winfrith

    International Nuclear Information System (INIS)

    Fraser, D.C.

    1977-01-01

    This paper discusses experience in the testing of high efficiency filters in a variety of reactor and plant installations at AEE Winfrith. There is rarely any concern about the effectiveness of the filter as supplied by any reputable manufacturer. Experience has shown there is a need to check for defects in the installation of filters which could lead to by-passing of aerosols and it is desirable to perform periodical re-tests to ensure that no subsequent deterioration occurs. It is important to use simple, portable apparatus for such tests; methods based on the use of sodium chloride aerosols, although suitable for the testing of filters prior to installation, involve apparatus which is too bulky for in-situ testing. At Winfrith a double automatic Pollak counter has been developed and used routinely since 1970. The aerosol involved has a particle size far smaller than the size most likely to penetrate intact filters, but this is irrelevant when one is primarily interested in particles which by-pass the filter. Comparisons with other methods of testing filters will be described. There is remarkably good agreement between the efficiency of the filter installation as measured by a Pollak counter compared with techniques involving aerosols of sodium chloride and Dioctyl Phthalate (DOP), presumably because the leakage around the filter is independent of particle size

  18. Prospects for development of powerful, highly efficient, relativistic gyrodevices

    International Nuclear Information System (INIS)

    Nusinovich, G.S.; Granatstein, V.L.

    1992-01-01

    For various applications the required parameters of sources of powerful microwave radiation lie far beyond the capabilities of existing tubes. This provokes an interest in reconsidering basic principles of relevant microwave sources in order to search for alternative concepts in their development. One of the most promising devices in the short-wavelength region of microwaves is the cyclotron resonance maser (CRM). During the last decade, two important varieties of CRMs have been distinguished, namely, gyrotrons, which operate at frequencies close to cut-off, and cyclotron autoresonance masers (CARMs), which operate at frequencies far from cut-off. When the axial phase velocity of the wave in properly adjusted to the beam voltage and electron pitch-ratio, the efficiency of relativistic CRMs may be high (≥50%). The method of optimizing efficiency based on a partial compensation of the shift in the relativistic electron cyclotron frequency by the change in the Doppler term can be, in principle, accompanied by a corresponding profiling of the external magnetic field and/or the wave phase velocity in a slightly irregular waveguide. These methods can be used in such relativistic CRMs as relativistic gyrotrons, gyroklystrons, gyro-traveling-wave-tubes and gyrotwistrons. The most important point is their sensitivity to a spread in electron parameters. As the beam voltage grows, the operation becomes more sensitive. However, at relatively low voltages such devices are quite tolerant to electron velocity spread

  19. Novel Intermode Prediction Algorithm for High Efficiency Video Coding Encoder

    Directory of Open Access Journals (Sweden)

    Chan-seob Park

    2014-01-01

    Full Text Available The joint collaborative team on video coding (JCT-VC is developing the next-generation video coding standard which is called high efficiency video coding (HEVC. In the HEVC, there are three units in block structure: coding unit (CU, prediction unit (PU, and transform unit (TU. The CU is the basic unit of region splitting like macroblock (MB. Each CU performs recursive splitting into four blocks with equal size, starting from the tree block. In this paper, we propose a fast CU depth decision algorithm for HEVC technology to reduce its computational complexity. In 2N×2N PU, the proposed method compares the rate-distortion (RD cost and determines the depth using the compared information. Moreover, in order to speed up the encoding time, the efficient merge SKIP detection method is developed additionally based on the contextual mode information of neighboring CUs. Experimental result shows that the proposed algorithm achieves the average time-saving factor of 44.84% in the random access (RA at Main profile configuration with the HEVC test model (HM 10.0 reference software. Compared to HM 10.0 encoder, a small BD-bitrate loss of 0.17% is also observed without significant loss of image quality.

  20. High Efficiency Driving Electronics for General Illumination LED Luminaires

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Anand

    2012-10-31

    New generation of standalone LED driver platforms developed, which are more efficient These LED Drivers are more efficient (≥90%), smaller in size ( 0.15 in3/watt), lower in cost ( 12 cents/watt in high volumes in millions of units). And these products are very reliable having an operating life of over 50,000 hours. This technology will enable growth of LED light sources in the use. This will also help in energy saving and reducing total life cycle cost of LED units. Two topologies selected for next generation of LED drivers: 1) Value engineered single stage Flyback topology. This is suitable for low powered LED drivers up to 50W power. 2) Two stage boost power factor correction (PFC) plus LLC half bridge platform for higher powers. This topology is suitable for 40W to 300W LED drivers. Three new product platforms were developed to cover a wide range of LED drivers: 1) 120V 40W LED driver, 2) Intellivolt 75W LED driver, & 3) Intellivolt 150W LED driver. These are standalone LED drivers for rugged outdoor lighting applications. Based on these platforms number of products are developed and successfully introduced in the market place meeting key performance, size and cost goals.

  1. Characterization of three high efficiency and blue sensitive silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Otte, Adam Nepomuk, E-mail: otte@gatech.edu; Garcia, Distefano; Nguyen, Thanh; Purushotham, Dhruv

    2017-02-21

    We report about the optical and electrical characterization of three high efficiency and blue sensitive Silicon photomultipliers from FBK, Hamamatsu, and SensL. Key features of the tested devices when operated at 90% breakdown probability are peak photon detection efficiencies between 40% and 55%, temperature dependencies of gain and PDE that are less than 1%/°C, dark rates of ∼50 kHz/mm{sup 2} at room temperature, afterpulsing of about 2%, and direct optical crosstalk between 6% and 20%. The characteristics of all three devices impressively demonstrate how the Silicon-photomultiplier technology has improved over the past ten years. It is further demonstrated how the voltage and temperature characteristics of a number of quantities can be parameterized on the basis of physical models. The models provide a deeper understanding of the device characteristics over a wide bias and temperature range. They also serve as examples how producers could provide the characteristics of their SiPMs to users. A standardized parameterization of SiPMs would enable users to find the optimal SiPM for their application and the operating point of SiPMs without having to perform measurements thus significantly reducing design and development cycles.

  2. Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

    Science.gov (United States)

    Tanake, Katsuaki

    We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of

  3. Gamma-ray spectrometer system with high efficiency and high resolution

    International Nuclear Information System (INIS)

    Moss, C.E.; Bernard, W.; Dowdy, E.J.; Garcia, C.; Lucas, M.C.; Pratt, J.C.

    1983-01-01

    Our gamma-ray spectrometer system, designed for field use, offers high efficiency and high resolution for safeguards applications. The system consists of three 40% high-purity germanium detectors and a LeCroy 3500 data acquisition system that calculates a composite spectrum for the three detectors. The LeCroy 3500 mainframe can be operated remotely from the detector array with control exercised through modems and the telephone system. System performance with a mixed source of 125 Sb, 154 Eu, and 155 Eu confirms the expected efficiency of 120% with the overall resolution showing little degradation over that of the worst detector

  4. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  5. Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

    Science.gov (United States)

    Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

    2018-04-01

    Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

  6. High efficiency solid-state sensitized heterojunction photovoltaic device

    KAUST Repository

    Wang, Mingkui

    2010-06-01

    The high molar extinction coefficient heteroleptic ruthenium dye, NaRu(4,4′-bis(5-(hexylthio)thiophen-2-yl)-2,2′-bipyridine) (4-carboxylic acid-4′-carboxylate-2,2′-bipyridine) (NCS) 2, exhibits certified 5% electric power conversion efficiency at AM 1.5 solar irradiation (100 mW cm-2) in a solid-state dye-sensitized solar cell using 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)-9, 9′-spirobifluorene (spiro-MeOTAD) as the organic hole-transporting material. This demonstration elucidates a class of photovoltaic devices with potential for low-cost power generation. © 2010 Elsevier Ltd. All rights reserved.

  7. Dimensioning storage and computing clusters for efficient High Throughput Computing

    CERN Multimedia

    CERN. Geneva

    2012-01-01

    Scientific experiments are producing huge amounts of data, and they continue increasing the size of their datasets and the total volume of data. These data are then processed by researchers belonging to large scientific collaborations, with the Large Hadron Collider being a good example. The focal point of Scientific Data Centres has shifted from coping efficiently with PetaByte scale storage to deliver quality data processing throughput. The dimensioning of the internal components in High Throughput Computing (HTC) data centers is of crucial importance to cope with all the activities demanded by the experiments, both the online (data acceptance) and the offline (data processing, simulation and user analysis). This requires a precise setup involving disk and tape storage services, a computing cluster and the internal networking to prevent bottlenecks, overloads and undesired slowness that lead to losses cpu cycles and batch jobs failures. In this paper we point out relevant features for running a successful s...

  8. Additive Manufacturing for Highly Efficient Window Inserts CRADA Report

    Energy Technology Data Exchange (ETDEWEB)

    Roschli, Alex C. [ORNL; Chesser, Phillip C. [ORNL; Love, Lonnie J. [ORNL

    2018-04-01

    ORNL partnered with the Mackinac Technology Company to demonstrate how additive manufacturing can be used to create highly energy efficient window inserts for retrofit in pre-existing buildings. Many early iterations of the window inserts were fabricated using carbon fiber reinforced thermoplastics and polycarbonate films as a stand in for the low-e coated films produced by the Mackinac Technology Company. After demonstration of the proof of concept, i.e. custom window inserts with tensioned film, the materials used for the manufacture of the frames was more closely examined. Hollow particle-filled syntactic foam and low-density polymer composites formed by expandable microspheres were explored as the materials used to additively manufacture the frames of the inserts. It was concluded that low-cost retrofit window inserts in custom sizes could be easily fabricated using large scale additive manufacturing. Furthermore, the syntactic and expanded foams developed and tested satisfy the mechanical performance requirements for the application.

  9. High Efficiency EBCOT with Parallel Coding Architecture for JPEG2000

    Directory of Open Access Journals (Sweden)

    Chiang Jen-Shiun

    2006-01-01

    Full Text Available This work presents a parallel context-modeling coding architecture and a matching arithmetic coder (MQ-coder for the embedded block coding (EBCOT unit of the JPEG2000 encoder. Tier-1 of the EBCOT consumes most of the computation time in a JPEG2000 encoding system. The proposed parallel architecture can increase the throughput rate of the context modeling. To match the high throughput rate of the parallel context-modeling architecture, an efficient pipelined architecture for context-based adaptive arithmetic encoder is proposed. This encoder of JPEG2000 can work at 180 MHz to encode one symbol each cycle. Compared with the previous context-modeling architectures, our parallel architectures can improve the throughput rate up to 25%.

  10. Disposal of aqueous condensate from high efficiency gas boilers

    Energy Technology Data Exchange (ETDEWEB)

    Hardwick, G J; Pattison, J R

    1984-01-01

    If highly efficient gas-fired condensing heating appliances are installed in Britain, the aqueous condensate produced can be conveniently run into existing sewage drains. The part of the drainage system that is most vulnerable to corrosion from the mildly acid condensate is that portion adjacent to the domestic premises. The tests described indicate that this is not at risk and the only precaution that might be considered necessary is to avoid running the condensate over galvanized drain covers in order to prevent unsightly staining. Water authorities in Britain and detailed studies in the US and Holland confirm that the condensate - after dilution by domestic waste, sewage, and rainwater - would be harmless to municipal sewage systems and would not, either in volume or chemical composition, affect the working of existing sewage treatment plants.

  11. High efficiency solid-state sensitized heterojunction photovoltaic device

    KAUST Repository

    Wang, Mingkui; Liu, Jingyuan; Cevey-Ha, Ngoc-Le; Moon, Soo-Jin; Liska, Paul; Humphry-Baker, Robin; Moser, Jacques-E.; Grä tzel, Carole; Wang, Peng; Zakeeruddin, Shaik M.

    2010-01-01

    The high molar extinction coefficient heteroleptic ruthenium dye, NaRu(4,4′-bis(5-(hexylthio)thiophen-2-yl)-2,2′-bipyridine) (4-carboxylic acid-4′-carboxylate-2,2′-bipyridine) (NCS) 2, exhibits certified 5% electric power conversion efficiency at AM 1.5 solar irradiation (100 mW cm-2) in a solid-state dye-sensitized solar cell using 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)-9, 9′-spirobifluorene (spiro-MeOTAD) as the organic hole-transporting material. This demonstration elucidates a class of photovoltaic devices with potential for low-cost power generation. © 2010 Elsevier Ltd. All rights reserved.

  12. Highly Efficient Catalytic Cyclic Carbonate Formation by Pyridyl Salicylimines.

    Science.gov (United States)

    Subramanian, Saravanan; Park, Joonho; Byun, Jeehye; Jung, Yousung; Yavuz, Cafer T

    2018-03-21

    Cyclic carbonates as industrial commodities offer a viable nonredox carbon dioxide fixation, and suitable heterogeneous catalysts are vital for their widespread implementation. Here, we report a highly efficient heterogeneous catalyst for CO 2 addition to epoxides based on a newly identified active catalytic pocket consisting of pyridine, imine, and phenol moieties. The polymeric, metal-free catalyst derived from this active site converts less-reactive styrene oxide under atmospheric pressure in quantitative yield and selectivity to the corresponding carbonate. The catalyst does not need additives, solvents, metals, or co-catalysts, can be reused at least 10 cycles without the loss of activity, and scaled up easily to a kilogram scale. Density functional theory calculations reveal that the nucleophilicity of pyridine base gets stronger due to the conjugated imines and H-bonding from phenol accelerates the reaction forward by stabilizing the intermediate.

  13. Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry.

    Science.gov (United States)

    van den Bekerom, Dirk; den Harder, Niek; Minea, Teofil; Gatti, Nicola; Linares, Jose Palomares; Bongers, Waldo; van de Sanden, Richard; van Rooij, Gerard

    2017-08-01

    A flowing microwave plasma based methodology for converting electric energy into internal and/or translational modes of stable molecules with the purpose of efficiently driving non-equilibrium chemistry is discussed. The advantage of a flowing plasma reactor is that continuous chemical processes can be driven with the flexibility of startup times in the seconds timescale. The plasma approach is generically suitable for conversion/activation of stable molecules such as CO2, N2 and CH4. Here the reduction of CO2 to CO is used as a model system: the complementary diagnostics illustrate how a baseline thermodynamic equilibrium conversion can be exceeded by the intrinsic non-equilibrium from high vibrational excitation. Laser (Rayleigh) scattering is used to measure the reactor temperature and Fourier Transform Infrared Spectroscopy (FTIR) to characterize in situ internal (vibrational) excitation as well as the effluent composition to monitor conversion and selectivity.

  14. Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film

    Directory of Open Access Journals (Sweden)

    Ge FF

    2010-01-01

    Full Text Available Abstract Ni nanocrystals (NCs were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs and the epitaxial growth of BaTiO3. The transmission electron microscopy and the X-ray diffraction characterization confirmed that the composite film consists of the Ni NCs layers alternating with the (001/(100-oriented epitaxial BaTiO3 separation layers.

  15. Comparison of high efficiency particulate filter testing methods

    International Nuclear Information System (INIS)

    1985-01-01

    High Efficiency Particulate Air (HEPA) filters are used for the removal of submicron size particulates from air streams. In nuclear industry they are used as an important engineering safeguard to prevent the release of air borne radioactive particulates to the environment. HEPA filters used in the nuclear industry should therefore be manufactured and operated under strict quality control. There are three levels of testing HEPA filters: i) testing of the filter media; ii) testing of the assembled filter including filter media and filter housing; and iii) on site testing of the complete filter installation before putting into operation and later for the purpose of periodic control. A co-ordinated research programme on particulate filter testing methods was taken up by the Agency and contracts were awarded to the Member Countries, Belgium, German Democratic Republic, India and Hungary. The investigations carried out by the participants of the present co-ordinated research programme include the results of the nowadays most frequently used HEPA filter testing methods both for filter medium test, rig test and in-situ test purposes. Most of the experiments were carried out at ambient temperature and humidity, but indications were given to extend the investigations to elevated temperature and humidity in the future for the purpose of testing the performance of HEPA filter under severe conditions. A major conclusion of the co-ordinated research programme was that it was not possible to recommend one method as a reference method for in situ testing of high efficiency particulate air filters. Most of the present conventional methods are adequate for current requirements. The reasons why no method is to be recommended were multiple, ranging from economical aspects, through incompatibility of materials to national regulations

  16. Efficient high-performance ultrasound beamforming using oversampling

    Science.gov (United States)

    Freeman, Steven R.; Quick, Marshall K.; Morin, Marc A.; Anderson, R. C.; Desilets, Charles S.; Linnenbrink, Thomas E.; O'Donnell, Matthew

    1998-05-01

    High-performance and efficient beamforming circuitry is very important in large channel count clinical ultrasound systems. Current state-of-the-art digital systems using multi-bit analog to digital converters (A/Ds) have matured to provide exquisite image quality with moderate levels of integration. A simplified oversampling beamforming architecture has been proposed that may a low integration of delta-sigma A/Ds onto the same chip as digital delay and processing circuitry to form a monolithic ultrasound beamformer. Such a beamformer may enable low-power handheld scanners for high-end systems with very large channel count arrays. This paper presents an oversampling beamformer architecture that generates high-quality images using very simple; digitization, delay, and summing circuits. Additional performance may be obtained with this oversampled system for narrow bandwidth excitations by mixing the RF signal down in frequency to a range where the electronic signal to nose ratio of the delta-sigma A/D is optimized. An oversampled transmit beamformer uses the same delay circuits as receive and eliminates the need for separate transmit function generators.

  17. Efficient binning for bitmap indices on high-cardinality attributes

    Energy Technology Data Exchange (ETDEWEB)

    Rotem, Doron; Stockinger, Kurt; Wu, Kesheng

    2004-11-17

    Bitmap indexing is a common technique for indexing high-dimensional data in data warehouses and scientific applications. Though efficient for low-cardinality attributes, query processing can be rather costly for high-cardinality attributes due to the large storage requirements for the bitmap indices. Binning is a common technique for reducing storage costs of bitmap indices. This technique partitions the attribute values into a number of ranges, called bins, and uses bitmap vectors to represent bins (attribute ranges) rather than distinct values. Although binning may reduce storage costs, it may increase the access costs of queries that do not fall on exact bin boundaries (edge bins). For this kind of queries the original data values associated with edge bins must be accessed, in order to check them against the query constraints.In this paper we study the problem of finding optimal locations for the bin boundaries in order to minimize these access costs subject to storage constraints. We propose a dynamic programming algorithm for optimal partitioning of attribute values into bins that takes into account query access patterns as well as data distribution statistics. Mathematical analysis and experiments on real life data sets show that the optimal partitioning achieved by this algorithm can lead to a significant improvement in the access costs of bitmap indexing systems for high-cardinality attributes.

  18. Highly Efficient Fiber Lasers for Wireless Power Transmission, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop ytterbium (Yb) fiber lasers with an electrical-to-optical efficiency of nominally 64% by directly coupling 80%-efficient diode lasers with Yb...

  19. Atomically layer-by-layer diffusion of oxygen/hydrogen in highly epitaxial PrBaCo{sub 2}O{sub 5.5+δ} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Shanyong; Xu, Xing; Enriquez, Erik; Mace, Brennan E.; Chen, Garry; Kelliher, Sean P.; Chen, Chonglin, E-mail: cl.chen@utsa.edu [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Zhang, Yamei [Department of Physics, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu 212003 (China); Whangbo, Myung-Hwan [North Carolina State University, Raleigh, North Carolina 27695-8204 (United States); Dong, Chuang; Zhang, Qinyu [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China)

    2015-12-14

    Single-crystalline epitaxial thin films of PrBaCo{sub 2}O{sub 5.5+δ} (PrBCO) were prepared, and their resistance R(t) under a switching flow of oxidizing and reducing gases were measured as a function of the gas flow time t in the temperature range of 200–800 °C. During the oxidation cycle under O{sub 2}, the PrBCO films exhibit fast oscillations in their dR(t)/dt vs. t plots, which reflect the oxidation processes, Co{sup 2+}/Co{sup 3+} → Co{sup 3+} and Co{sup 3+} → Co{sup 3+}/Co{sup 4+}, that the Co atoms of PrBCO undergo. Each oscillation consists of two peaks, with larger and smaller peaks representing the oxygen/hydrogen diffusion through the (BaO)(CoO{sub 2})(PrO)(CoO{sub 2}) layers of PrBCO via the oxygen-vacancy-exchange mechanism. This finding paves a significant avenue for cathode materials operating in low-temperature solid-oxide-fuel-cell devices and for chemical sensors with wide range of operating temperature.

  20. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wu, Yuh-Renn [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

    2014-05-21

    The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.