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Sample records for high doping levels

  1. Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

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    Damir Sekulic, Enver Tahiraj, Milan Zvan, Natasa Zenic, Ognjen Uljevic, Blaz Lesnik

    2016-12-01

    Full Text Available Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females involved in volleyball (n = 77, soccer (n = 163, basketball (n = 114 and handball (n = 103. Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports.

  2. Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

    Science.gov (United States)

    Sekulic, Damir; Tahiraj, Enver; Zvan, Milan; Zenic, Natasa; Uljevic, Ognjen; Lesnik, Blaz

    2016-01-01

    Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females) involved in volleyball (n = 77), soccer (n = 163), basketball (n = 114) and handball (n = 103). Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports. Key points The doping knowledge among Kosovar team-sport athletes is very low and systematic anti-doping education is urgently needed. The highest risk of doping behaviour in males is found for those athletes who had been

  3. The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis Among High-Level Athletes

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    Sekulic Damir

    2017-10-01

    Full Text Available The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success, doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc., sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency. The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping, and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger

  4. The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis among High-Level Athletes

    Science.gov (United States)

    Sekulic, Damir; Zenic, Natasa; Versic, Sime; Maric, Dora; Gabrilo, Goran; Jelicic, Mario

    2017-01-01

    Abstract The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience) completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success), doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc.), sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency). The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping), and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger

  5. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    International Nuclear Information System (INIS)

    Sahin, Bünyamin; Kaya, Tolga

    2016-01-01

    Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  6. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sahin, Bünyamin, E-mail: sahin38@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, 31034 (Turkey); School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Kaya, Tolga [School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, 48859 (United States)

    2016-01-30

    Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  7. Dietary supplementation and doping-related factors in high-level sailing

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    Rodek Jelena

    2012-12-01

    Full Text Available Abstract Background Although dietary supplements (DSs in sports are considered a natural need resulting from athletes’ increased physical demands, and although they are often consumed by athletes, data on DS usage in Olympic sailing are scarce. The aim of this study was to study the use of and attitudes towards DSs and doping problems in high-level competitive sailing. Methods The sample consisted of 44 high-level sailing athletes (5 of whom were female; total mean age 24.13 ± 6.67 years and 34 coaches (1 of whom was female; total mean age 37.01 ± 11.70. An extensive, self-administered questionnaire of substance use was used, and the subjects were asked about sociodemographic data, sport-related factors, DS-related factors (i.e., usage of and knowledge about DSs, sources of information, and doping-related factors. The Kruskal-Wallis ANOVA was used to determine the differences in group characteristics, and Spearman’s rank order correlation and a logistic regression analysis were used to define the relationships between the studied variables. Results DS usage is relatively high. More than 77% of athletes consume DSs, and 38% do so on a regular basis (daily. The athletes place a high degree of trust in their coaches and/or physicians regarding DSs and doping. The most important reason for not consuming DSs is the opinion that DSs are useless and a lack of knowledge about DSs. The likelihood of doping is low, and one-third of the subjects believe that doping occurs in sailing (no significant differences between athletes and coaches. The logistic regression found crew number (i.e., single vs. double crew to be the single significant predictor of DS usage, with a higher probability of DS consumption among single crews. Conclusion Because of the high consumption of DSs future investigations should focus on real nutritional needs in sailing sport. Also, since athletes reported that their coaches are the primary source of information about

  8. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    Science.gov (United States)

    Sahin, Bünyamin; Kaya, Tolga

    2016-01-01

    In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  9. High-Level Heteroatom Doped Two-Dimensional Carbon Architectures for Highly Efficient Lithium-Ion Storage

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    Zhijie Wang

    2018-04-01

    Full Text Available In this work, high-level heteroatom doped two-dimensional hierarchical carbon architectures (H-2D-HCA are developed for highly efficient Li-ion storage applications. The achieved H-2D-HCA possesses a hierarchical 2D morphology consisting of tiny carbon nanosheets vertically grown on carbon nanoplates and containing a hierarchical porosity with multiscale pore size. More importantly, the H-2D-HCA shows abundant heteroatom functionality, with sulfur (S doping of 0.9% and nitrogen (N doping of as high as 15.5%, in which the electrochemically active N accounts for 84% of total N heteroatoms. In addition, the H-2D-HCA also has an expanded interlayer distance of 0.368 nm. When used as lithium-ion battery anodes, it shows excellent Li-ion storage performance. Even at a high current density of 5 A g−1, it still delivers a high discharge capacity of 329 mA h g−1 after 1,000 cycles. First principle calculations verifies that such unique microstructure characteristics and high-level heteroatom doping nature can enhance Li adsorption stability, electronic conductivity and Li diffusion mobility of carbon nanomaterials. Therefore, the H-2D-HCA could be promising candidates for next-generation LIB anodes.

  10. High Chloride Doping Levels Stabilize the Perovskite Phase of Cesium Lead Iodide.

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    Dastidar, Subham; Egger, David A; Tan, Liang Z; Cromer, Samuel B; Dillon, Andrew D; Liu, Shi; Kronik, Leeor; Rappe, Andrew M; Fafarman, Aaron T

    2016-06-08

    Cesium lead iodide possesses an excellent combination of band gap and absorption coefficient for photovoltaic applications in its perovskite phase. However, this is not its equilibrium structure under ambient conditions. In air, at ambient temperature it rapidly transforms to a nonfunctional, so-called yellow phase. Here we show that chloride doping, particularly at levels near the solubility limit for chloride in a cesium lead iodide host, provides a new approach to stabilizing the functional perovskite phase. In order to achieve high doping levels, we first co-deposit colloidal nanocrystals of pure cesium lead chloride and cesium lead iodide, thereby ensuring nanometer-scale mixing even at compositions that potentially exceed the bulk miscibility of the two phases. The resulting nanocrystal solid is subsequently fused into a polycrystalline thin film by chemically induced, room-temperature sintering. Spectroscopy and X-ray diffraction indicate that the chloride is further dispersed during sintering and a polycrystalline mixed phase is formed. Using density functional theory (DFT) methods in conjunction with nudged elastic band techniques, low-energy pathways for interstitial chlorine diffusion into a majority-iodide lattice were identified, consistent with the facile diffusion and fast halide exchange reactions observed. By comparison to DFT-calculated values (with the PBE exchange-correlation functional), the relative change in band gap and the lattice contraction are shown to be consistent with a Cl/I ratio of a few percent in the mixed phase. At these incorporation levels, the half-life of the functional perovskite phase in a humid atmosphere increases by more than an order of magnitude.

  11. Examination of Factors Explaining Coaching Strategy and Training Methodology as Correlates of Potential Doping Behavior in High-Level Swimming

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    Liposek, Silvester; Zenic, Natasa; Saavedra, Jose M; Sekulic, Damir; Rodek, Jelena; Marinsek, Miha; Sajber, Dorica

    2018-01-01

    Although coaching is considered an important determinant of athletes’ potential doping behavior (PDB), there is an evident lack of studies that have examined coaching-strategy-and-training-methodology (CS&TM) in relation to PDB. This study was aimed to identify the specific associations that may exist between CS&TM -factors and other factors, and PDB in high-level swimming. The sample comprised 94 swimmers (35 females; 19.7 ± 2.3 years of age) and consisted of swimmers older than 18 years who participated in the 2017 National Championship. Variables were collected by previously validated questionnaires, with the addition of questions where athletes were asked about CS&TM to which they had been exposed. Multinomial logistic regression was applied for the criterion PDB (Negative PDB – Neutral PDB – Positive PDB). The higher risk for positive-PDB was found in males (OR: 6.58; 95%CI: 1.01-9.12); therefore, all regressions were adjusted for gender. Those swimmers who achieved better competitive result were less prone to neutral-PDB (0.41; 0.17-0.98). The positive-PDB was evidenced in those swimmers who perceived that their training was monotonous and lacked diversity (1.82; 1.41-5.11), and who were involved in training which was mostly oriented toward volume (1.76; 1.11-7.12). The lower likelihood of positive-PDB is found in those who replied that technique is practiced frequently (0.12; 0.01-0.81), those who replied that coach regularly provided the attention to explain the training aims (0.21; 0.04-0.81), and that coach frequently reviewed and discussed the quality of execution of specific tasks (0.41; 0.02-0.81). The findings on the relationships between the studied variables and PDB should be incorporated into targeted anti-doping efforts in swimming. Further studies examining sport-specific variables of CS&TM in younger swimmers and other sports are warranted. Key points The opinions about doping presence in swimming were not associated with athletes

  12. Gender- and Sport-Specific Associations Between Religiousness and Doping Behavior in High-Level Team Sports.

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    Zvan, Milan; Zenic, Natasa; Sekulic, Damir; Cubela, Mladen; Lesnik, Blaz

    2017-08-01

    Religiousness is known to be specifically associated with substance abuse, but there is an evident lack of studies investigating the association between religiousness and doping behavior as a specific type of substance abuse in athletes. This study aimed to provide evidence for possible gender- and sport-specific associations between religiousness and doping behavior among team-sport athletes of both genders. The participants were 886 athletes (21.9 ± 3.8 years of age; 352 females) involved in four sports: volleyball (n = 154; 78 females), handball (n = 206; 68 females), soccer (n = 316; 110 females) and basketball (n = 230; 96 females) from Croatia and Slovenia (all traditionally Roman Catholics). The data were collected using a previously validated structured questionnaire that examined sociodemographic, sport- and doping-related factors. In addition, religiousness was captured by the Santa Clara Strength of Religious Faith questionnaire (SCSRF). Gender-stratified simple logistic regressions were applied to determine associations between covariates and doping behavior (criterion). There was no significant difference in potential doping behavior between males and females (OR 1.06, 95 % CI 0.76-1.46), while females reported higher religiousness (SCSRF: 23.11 ± 3.23 and 25.46 ± 7.2 for males and females, respectively; t test = 1.82, p sport and age, the SCSRF remained a significant predictor of potential doping behavior (OR 0.95, 95 % CI 0.91-0.99). For males, the belief that doping was present in sport was strongly associated with a higher likelihood of doping. Our results suggest that highly religious females involved in three of the studies sports (i.e., volleyball, handball and basketball) show a weaker tendency toward doping. Meanwhile, there is no evidence that religiousness influences doping behavior among male team-sport athletes. Therefore, sport-specific and gender-specific approach in studying possible relationships that exist

  13. The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

    International Nuclear Information System (INIS)

    Zhang, Shiyan; Mei, Dajiang; Du, Xin; Lin, Zheshuai; Zhong, Junbo; Wu, Yuandong; Xu, Jingli

    2016-01-01

    Ag 1−x Ga 1−x Si x Se 2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe 4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe 4 is composed of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ga) tetrahedra. AgGaSiSe 4 is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe 4 and the value is 0.33 eV larger than that of Ag 3 Ga 3 SiSe 8 (2.30 eV). - Graphical abstract: The Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe 4 was synthesized for the first time. AgGaSiSe 4 crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe 4 . • AgGaSiSe 4 crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe 4 is enlarged compared with Ag 3 Ga 3 SiSe 8 .

  14. High performance yellow organic electroluminescent devices by doping iridium(III) complex into host materials with stepwise energy levels

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Rongzhen; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Jiang, Yunlong; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2015-10-15

    In this work, we aim to further improve the electroluminescent (EL) performances of a yellow light-emitting iridium(III) complex by designing double light-emitting layers (EMLs) devices having stepwise energy levels. Compared with single-EML devices, these designed double-EML devices showed improved EL efficiency and brightness attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. Based on the investigation of carriers' distribution, device structure was further optimized by adjusting the thickness of deposited layers. Finally, yellow EL device (Commission Internationale de l'Eclairage (CIE) coordinates of (0.446, 0.542)) with maximum current efficiency, power efficiency and brightness up to 78.62 cd/A (external quantum efficiency (EQE) of 21.1%), 82.28 lm/W and 72,713 cd/m{sup 2}, respectively, was obtained. Even at the high brightness of 1000 cd/m{sup 2}, EL efficiency as high as 65.54 cd/A (EQE=17.6%) can be retained. - Highlights: • Yellow electroluminescent devices were designed and fabricated. • P-type and n-type materials having stepwise energy levels were chosen as host materials. • Better balance of holes and electrons causes the enhanced efficiencies. • Improved carriers' trapping suppresses the emission of host material.

  15. High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

    Science.gov (United States)

    Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

    2018-04-01

    Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

  16. In Situ High-Level Nitrogen Doping into Carbon Nanospheres and Boosting of Capacitive Charge Storage in Both Anode and Cathode for a High-Energy 4.5 V Full-Carbon Lithium-Ion Capacitor.

    Science.gov (United States)

    Sun, Fei; Liu, Xiaoyan; Wu, Hao Bin; Wang, Lijie; Gao, Jihui; Li, Hexing; Lu, Yunfeng

    2018-05-02

    To circumvent the imbalances of electrochemical kinetics and capacity between Li + storage anodes and capacitive cathodes for lithium-ion capacitors (LICs), we herein demonstrate an efficient solution by boosting the capacitive charge-storage contributions of carbon electrodes to construct a high-performance LIC. Such a strategy is achieved by the in situ and high-level doping of nitrogen atoms into carbon nanospheres (ANCS), which increases the carbon defects and active sites, inducing more rapidly capacitive charge-storage contributions for both Li + storage anodes and PF 6 - storage cathodes. High-level nitrogen-doping-induced capacitive enhancement is successfully evidenced by the construction of a symmetric supercapacitor using commercial organic electrolytes. Coupling a pre-lithiated ANCS anode with a fresh ANCS cathode enables a full-carbon LIC with a high operating voltage of 4.5 V and high energy and power densities thereof. The assembled LIC device delivers high energy densities of 206.7 and 115.4 Wh kg -1 at power densities of 0.225 and 22.5 kW kg -1 , respectively, as well as an unprecedented high-power cycling stability with only 0.0013% capacitance decay per cycle within 10 000 cycles at a high power output of 9 kW kg -1 .

  17. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  18. Advances in highly doped upconversion nanoparticles.

    Science.gov (United States)

    Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong

    2018-06-20

    Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.

  19. Double-wall carbon nanotubes doped with different Br2 doping levels: a resonance Raman study.

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    do Nascimento, Gustavo M; Hou, Taige; Kim, Yoong Ahm; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Akuzawa, Noboru; Dresselhaus, Mildred S

    2008-12-01

    This report focuses on the effects of different Br2 doping levels on the radial breathing modes of "double-wall carbon nanotube (DWNT) buckypaper". The resonance Raman profile of the Br2 bands are shown for different DWNT configurations with different Br2 doping levels. Near the maximum intensity of the resonance Raman profile, mainly the Br2 molecules adsorbed on the DWNT surface contribute strongly to the observed omega(Br-Br) Raman signal.

  20. Room temperature ferromagnetism in Co doped ZnO within an optimal doping level of 5%

    International Nuclear Information System (INIS)

    Mohapatra, J.; Mishra, D.K.; Mishra, Debabrata; Perumal, A.; Medicherla, V.R.R.; Phase, D.M.; Singh, S.K.

    2012-01-01

    Highlights: ► Zn 1−x Co x O ((0 ≤ x ≤ 0.1)) system synthesized by solid state reaction technique. ► Observation of room temperature ferromagnetism for 3 and 5% Co doped ZnO. ► XPS and EPMA studies predict the occurrence of segregated CoO clusters. ► Suppresses ferromagnetic ordering in higher doping percentage of Co (>5%). -- Abstract: We report on the structural, micro-structural and magnetic properties of Zn 1−x Co x O (0 ≤ x ≤ 0.1) system. Electron probe micro-structural analysis on 5% Co doped ZnO indicates the presence of segregated cobalt oxide which is also confirmed from the Co 2p core level X-ray photoelectron spectrum. The presence of oxygen defects in lower percentage of Co doped ZnO (≤5%) enhances the carrier mediated exchange interaction and thereby enhancing the room-temperature ferromagnetic behaviour. Higher doping percentage of cobalt (>5%) creates weak link between the grains and suppresses the carrier mediated exchange interaction. This is the reason why room temperature ferromagnetism is not observed in 7% and 10% Co doped ZnO.

  1. High temperature superconductors at optimal doping

    Directory of Open Access Journals (Sweden)

    W. E. Pickett

    2006-09-01

    Full Text Available   Intensive study of the high temperature superconductors has been ongoing for two decades. A great deal of this effort has been devoted to the underdoped regime, where the new and difficult physics of the doped Mott insulator has met extra complications including bilayer coupling/splitting, shadow bands, and hot spots. While these complications continue to unfold, in this short overview the focus is moved to the region of actual high-Tc, that of optimal doping. The focus here also is not on the superconducting state itself, but primarily on the characteristics of the normal state from which the superconducting instability arises, and even these can be given only a broad-brush description. A reminder is given of two issues,(i why the “optimal Tc” varies,for n-layered systems it increases for n up to 3, then decreases for a given n, Tc increases according to the ‘basis’ atom in the order Bi, Tl, Hg (ii how does pressure, or a particular uniaxial strain, increase Tc when the zero-strain system is already optimally doped?

  2. Doping effects in high-Tc superconductors

    International Nuclear Information System (INIS)

    Hessel Andersen, N.

    1996-11-01

    The purpose of the project has been to study how the superconducting and magnetic properties of the high temperature superconductors change as function of oxygen stoichiometry and cation doping. The primary system of investigation has been YBa 2 Cu 3 O 6+x , which has been studied as function of oxygen stoichiometry, 0 2 planes, that is necessary for superconductivity, is strongly depending on structural ordering. The static properties and the kinetics of the structural ordering process have been studied experimentally by neutron and high energy synchrotron x-ray diffraction, by Raman scattering, and by computer simulation technique. Not only the oxygen stoichiometry but also the cation doping has been shown to influence the magnetic phases, in some cases in an unexpected manner. Thus, by neutron diffraction experiments it has been shown that doping with non-magnetic Al gives rise to a new magnetic phase. A theoretical model, has been developed. The magnetic phases of the Cu and Nd ordering in NdBa 2 Cu 3 O 6+x , and of the Cu and Pr ordering in PrBa 2 Cu 3 O 6+x have been studied by neutron diffraction with the main purpose of understanding why PrBa 2 Cu 3 O 6+x is magnetic and non-superconducting for all oxygen stoichiometries. In NdBa:2Cu 3 O 6+x studies of the magnetic flux lattice have been carried out by Small Angle Neutron Scattering. Additional structural studies of the superconducting and magnetic phases of related materials, of RENi 2 B 2 C (RE = rare earth), and of oxidized and cation doped materials based on La 2 CuO 4+δ have been carried out. Methods for structural studies and analyses, and equipment for electrical and magnetic characterization have been developed. (EG) 5 tabs., 46 ills., 35 refs

  3. Exceptionally crystalline and conducting acid doped polyaniline films by level surface assisted solution casting approach

    Energy Technology Data Exchange (ETDEWEB)

    Puthirath, Anand B.; Varma, Sreekanth J.; Jayalekshmi, S., E-mail: jayalekshmi@cusat.ac.in [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India); Methattel Raman, Shijeesh [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India)

    2016-04-18

    Emeraldine salt form of polyaniline (PANI) was synthesized by chemical oxidative polymerisation method using ammonium persulfate as oxidant. Resultant emeraldine salt form of PANI was dedoped using ammonia solution and then re-doped with camphor sulphonic acid (CSA), naphthaline sulphonic acid (NSA), hydrochloric acid (HCl), and m-cresol. Thin films of these doped PANI samples were deposited on glass substrates using solution casting method with m-cresol as solvent. A level surface was employed to get homogeneous thin films of uniform thickness. Detailed X-ray diffraction studies have shown that the films are exceptionally crystalline. The crystalline peaks observed in the XRD spectra can be indexed to simple monoclinic structure. FTIR and Raman spectroscopy studies provide convincing explanation for the exceptional crystallinity observed in these polymer films. FESEM and AFM images give better details of surface morphology of doped PANI films. The DC electrical conductivity of the samples was measured using four point probe technique. It is seen that the samples also exhibit quite high DC electrical conductivity, about 287 S/cm for CSA doped PANI, 67 S/cm for NSA doped PANI 65 S/cm for HCl doped PANI, and just below 1 S/cm for m-cresol doped PANI. Effect of using the level surface for solution casting is studied and correlated with the observed crystallinity.

  4. PULSION registered HP: Tunable, High Productivity Plasma Doping

    International Nuclear Information System (INIS)

    Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

    2011-01-01

    Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism--deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

  5. Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

    Science.gov (United States)

    Singh, Abhishek; Pandey, Tribhuwan

    2014-03-01

    The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

  6. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  7. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Science.gov (United States)

    Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  8. [Doping. High-tech cheating in sport].

    Science.gov (United States)

    Striegel, H; Simon, P

    2007-07-01

    Today, doping is no longer limited to the classical drugs with well known effects and side effects. Older generation anabolic steroids are used mainly in fitness and recreational sports. In contrast, due to doping tests, substances used in competitive sports include peptide hormones, medications not yet approved, and even specially developed drugs, such as designer steroids. Of the peptide hormones, particularly growth hormones (human growth hormone), erythropoietin and generics, insulin, and presumably insulin-like growth factor 1 are used. Substance groups potentially relevant for doping are selective androgen receptor modulators and gene therapy drugs. For most of these, there is no knowledge about side effects in healthy individuals, and no adequate doping tests. Therefore, anti-doping measures cannot rely solely on the continual improvement of doping analyses, but should include increased measures for doping prevention. Not only sports organizations, but also governmental agencies should be involved in developing and implementing these measures.

  9. The structure and band gap design of high Si doping level Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} (x=1/2)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shiyan [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Mei, Dajiang, E-mail: meidajiang718@pku.edu.cn [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, Xin [Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Lin, Zheshuai [Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Chinese Academy of Sciences, Beijing 100190 (China); Zhong, Junbo [Key Laboratory of Green Catalysis of Higher Education Institutes of Sichuan, College of Chemistry and Pharmaceutical Engineering, Sichuan University of Science and Engineering, Zigong 643000 (China); Wu, Yuandong, E-mail: wuyuandong2013@outlook.com [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, Jingli [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China)

    2016-06-15

    Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe{sub 4} has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe{sub 4} is composed of AgSe{sub 3} trigonal planar units, AgSe{sub 4} tetrahedra and MSe{sub 4}(M=Si, Ga) tetrahedra. AgGaSiSe{sub 4} is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe{sub 4} and the value is 0.33 eV larger than that of Ag{sub 3}Ga{sub 3}SiSe{sub 8} (2.30 eV). - Graphical abstract: The Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe{sub 4} was synthesized for the first time. AgGaSiSe{sub 4} crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe{sub 3} trigonal planar units, AgSe{sub 4} tetrahedra and MSe{sub 4} (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe{sub 4}. • AgGaSiSe{sub 4} crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe{sub 4} is enlarged compared with Ag{sub 3}Ga{sub 3}SiSe{sub 8}.

  10. Highly doped layer for tunnel junctions in solar cells

    Science.gov (United States)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  11. Highly improved sensibility and selectivity ethanol sensor of mesoporous Fe-doped NiO nanowires

    Science.gov (United States)

    Li, X. Q.; Wei, J. Q.; Xu, J. C.; Jin, H. X.; Jin, D. F.; Peng, X. L.; Hong, B.; Li, J.; Yang, Y. T.; Ge, H. L.; Wang, Xinqing

    2017-12-01

    In this paper, nickel oxides (NiO) and iron (Fe)-doped NiO nanowires (NWs) with the various doping content (from 1 to 9 at%) were synthesized by using SBA-15 templates with the nanocasting method. All samples were synthesized in the same conditions and exhibited the same mesoporous-structures, uniform diameter, and defects. Mesoporous-structures with high surface area created more active sites for the adsorption of oxygen on the surface of all samples, resulting in the smaller surface resistance in air. The impurity energy levels from the donor Fe-doping provided electrons to neutralize the holes of p-type Fe-doped NiO NWs, which greatly enhanced the total resistance. The comparative gas-sensing study between NiO NWs and Fe-doped NiO NWs indicated that the high-valence donor Fe-doping obviously improved the ethanol sensitivity and selectivity for Fe-doped NiO NWs. And Ni0.94Fe0.06O1.03 NWs sensor presented the highest sensitivity of 14.30 toward ethanol gas at 320 °C for the high-valence metal-doping.

  12. On the role of doping in High-Tc superconductors

    International Nuclear Information System (INIS)

    Mei, C.; Smith, V.H. Jr.

    1994-01-01

    High-T c superconductors (HTSCS) are usually obtained by doping electron donors or acceptors into parent materials. The actual role played by doping is still uncertain with various interpretations. The present electronic structure study provides some hints which may help to solve the mystery

  13. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    International Nuclear Information System (INIS)

    Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P

    2017-01-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)

  14. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    Science.gov (United States)

    Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

    2017-11-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

  15. High temperature mechanical tests performed on doped fuels

    International Nuclear Information System (INIS)

    Dugay, C.; Mocellin, A.; Dehaudt, P.; Sladkoff, M.

    1998-01-01

    The high-temperature compressive deformation of large-grained UO 2 doped with metallic oxides has been investigated and compared with that of pure UO 2 with a standard microstructure. All the specimens are made from a single batch of UO 2 powder. Tests with constant applied strain rate of 20μm.min -1 show that Cr 2 O 3 additions cause a decrease in the flow stress of about 15 MPa compared with the reference material. When reduced in hydrogen at 1500 deg. C the specimens present a peak stress close to the flow stress of the pure UO 2 . Measurements of creep rates are made at 1500 deg. C at applied stresses varying from 20 to 70 MPa. Cr 2 O 3 additions increase the creep-rate, up to several orders of magnitude-change from the pure material to a doped one. All the doped materials exhibit power-law creep with exponents in the range of 4.9 to 6.3. The activation energy varies from 466 to 451 kJ/mol depending on the dopant concentration. The creep of the undoped material is divided into three regimes of deformation depending on stress. At low stresses the strain rate shows a second power dependence on stress. At high stress levels a higher stress dependence is observed. The creep power-law breaks down and an exponential law holds true at higher stresses. The activation energies are found to be 410 and 560 kJ/mol in the low- and high-stress regions respectively. The former value is in good agreement with the grain boundary diffusion energy in stoichiometric polycrystalline uranium dioxide and the latter corresponds to that found for self-diffusion energy of uranium. Creep behaviours are discussed in terms of deformation mechanisms. (author)

  16. Highly luminescent Eu{sup 3+}-doped benzenetricarboxylate based materials

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Ivan G.N. [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Mustafa, Danilo, E-mail: dmustafa@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Andreoli, Bruno [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil); Felinto, Maria C.F.C. [Centro de Química do Meio Ambiente, Instituto de Pesquisas Energéticas e Nucleares, Av. Prof. Lineu Prestes 2242, São Paulo 05508-000, SP (Brazil); Malta, Oscar L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Recife 50670-90, PE (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.br [Departamento de Química Fundamental, Instituto de Química da Universidade de São Paulo, Av. Prof. Lineu Prestes 748, São Paulo 05508-900, SP (Brazil)

    2016-02-15

    [RE(TMA)] anhydrous complexes (RE{sup 3+}: Y, Gd and Lu) present high red emission intensity with a quantum efficiency (~45%) for the [Y(TMA):Eu{sup 3+}] complexes, due to the absence of non-radioactive decay pathways mediated by water molecules. The complexes were prepared in mild conditions. All the compounds are crystalline and thermostable up to 460 °C. Phosphorescence data of the complexes with Y, Gd and Lu show that the T{sub 1} state of the TMA{sup 3−} anion has energy higher than the {sup 5}D{sub 0} emitting level of the Eu{sup 3+} ion, indicating that the ligand can act as an intramolecular energy sensitizer. The photoluminescence properties of the doped materials were studied based on the excitation and emission spectra and luminescence decay curves. The experimental intensity parameters (Ω{sub λ}), lifetimes (τ), radiative (A{sub rad}) and non-radiative (A{sub nrad}) decay rates were determined and discussed. - Highlights: • Highly luminescent Europium doped anhydrous complexes. • Efficient monochromatic red light conversion molecular devices (LCMDs). • High emission quantum efficiencies.

  17. Determination of Doping Knowledge Level of Physical Education and Sports College Students

    Directory of Open Access Journals (Sweden)

    Mehmet DALLI

    2014-08-01

    Full Text Available The purpose of the work is Physical Education and Sports School students Doping is carried out to determine level of the knowledge. Muğla Sıtkı Koçman University Physical Education and Sports has been applied to the 120 people who teaching in this departmant have been assessed in the 120 sur veys. To determine the knowledge level of doping, content validity of the questionnaire consisting of 32 questions, intelligibility and reliability in the 2006 - 2007 school year are made by Coskun Sargın, Cronbach's alpha reliability coefficient was found t o be 0.92. (0.80 highly reliable data collection tool. The information obtained from the survey in SPSS 16.0 package program frequency, percentage values are taken. According to the data we have obtained as a result of analysis, the doping level of knowledge of students in the department and according to gender differences were observed (p <0.05. students about gene doping as a result they do not have sufficient information has emerged. The information obtained on our research findings and results of the evaluation will be presented in some detail.

  18. Page | 158 PERMITTING A CERTAIN LEVEL OF DOPING IN ...

    African Journals Online (AJOL)

    Fr. Ikenga

    World Anti-Doping Agency (WADA) and International Olympic Committee (IOC) ... forms of doping certainly have adverse health effects including given the fact ... fair in the first place, as variations in individual natural abilities, socio-economic.

  19. Doping of two-dimensional MoS2 by high energy ion implantation

    Science.gov (United States)

    Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

    2017-12-01

    Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

  20. Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

    International Nuclear Information System (INIS)

    Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

    2015-01-01

    Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications

  1. Spectroscopic properties of highly Nd-doped lead phosphate glass

    Energy Technology Data Exchange (ETDEWEB)

    Novais, A.L.F. [Instituto de Física, Universidade Federal de Alagoas, Grupo de Fotônica e Fluidos Complexos, 57072-970 Maceió, AL (Brazil); Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Guedes, I. [Departamento de Física, Universidade Federal do Ceará, Campus do PICI, Caixa Postal 6030, 60455-760 Fortaleza, CE (Brazil); Vermelho, M.V.D., E-mail: vermelho@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Grupo de Fotônica e Fluidos Complexos, 57072-970 Maceió, AL (Brazil)

    2015-11-05

    The spectroscopic characteristics of highly Nd{sup 3+}-doped lead phosphate glasses (xNd:Pb{sub 3}(PO{sub 4}){sub 2}) have been investigated. The X-ray spectra show that the matrices are glassy up to 25 wt% of Nd{sup 3+} doping. From the Judd–Ofelt analysis we observe that while the Ω{sub (2)} parameter remains constant indicating that the 4f{sup N} and 4f{sup N−1}5 d{sup 1} configurations are not affected by the Nd{sup 3+} doping, the behavior of both Ω{sub (4)} and Ω{sub (6)} changes for 15 wt% of Nd{sup 3+} doping. The reduction of the Ω{sub (6)} parameter is related to the increase of the covalence bonding between the ligands and the Nd{sup 3+} ions. At this particular concentration, the radiative lifetime has a four-fold enhancement. Such behaviors are likely to be related to a modification in the glass structure for high Nd{sup 3+} concentrations. - Graphical abstract: Highly doped lead-phosphate glass matrix, with nominal concentration of up to 25 wt%, maintain the spectroscopic properties without deterioration. The analysis concerning the point of view of Nd{sup 3+} ions showed that high concentrations only affects the rare earth electronic charge density distribution. - Highlights: • Spectroscopic characterization of Nd{sub 2}O{sub 3} highly doped lead phosphate glasses. • Phosphate glass doped with Nd{sup 3+} for applications in photonic devices. • Judd–Ofelt analysis in phosphate glasses doped with Neodymium.

  2. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

    Science.gov (United States)

    Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

    2018-01-09

    It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

  3. Reduction Expansion Synthesis as Strategy to Control Nitrogen Doping Level and Surface Area in Graphene

    Directory of Open Access Journals (Sweden)

    Russell Canty

    2015-10-01

    Full Text Available Graphene sheets doped with nitrogen were produced by the reduction-expansion (RES method utilizing graphite oxide (GO and urea as precursor materials. The simultaneous graphene generation and nitrogen insertion reactions are based on the fact that urea decomposes upon heating to release reducing gases. The volatile byproducts perform two primary functions: (i promoting the reduction of the GO and (ii providing the nitrogen to be inserted in situ as the graphene structure is created. Samples with diverse urea/GO mass ratios were treated at 800 °C in inert atmosphere to generate graphene with diverse microstructural characteristics and levels of nitrogen doping. Scanning electron microscopy (SEM and transmission electron microscopy (TEM were used to study the microstructural features of the products. The effects of doping on the samples structure and surface area were studied by X-ray diffraction (XRD, Raman Spectroscopy, and Brunauer Emmet Teller (BET. The GO and urea decomposition-reduction process as well as nitrogen-doped graphene stability were studied by thermogravimetric analysis (TGA coupled with mass spectroscopy (MS analysis of the evolved gases. Results show that the proposed method offers a high level of control over the amount of nitrogen inserted in the graphene and may be used alternatively to control its surface area. To demonstrate the practical relevance of these findings, as-produced samples were used as electrodes in supercapacitor and battery devices and compared with conventional, thermally exfoliated graphene.

  4. High-level verification

    CERN Document Server

    Lerner, Sorin; Kundu, Sudipta

    2011-01-01

    Given the growing size and heterogeneity of Systems on Chip (SOC), the design process from initial specification to chip fabrication has become increasingly complex. This growing complexity provides incentive for designers to use high-level languages such as C, SystemC, and SystemVerilog for system-level design. While a major goal of these high-level languages is to enable verification at a higher level of abstraction, allowing early exploration of system-level designs, the focus so far for validation purposes has been on traditional testing techniques such as random testing and scenario-based

  5. Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

    International Nuclear Information System (INIS)

    Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

    1987-01-01

    Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

  6. Design of high quality doped CeO2 solid electrolytes with nanohetero structure

    International Nuclear Information System (INIS)

    Mori, T.; Ou, D.R.; Ye, F.; Drennan, J.

    2006-01-01

    Doped cerium (CeO 2 ) compounds are fluorite related oxides which show oxide ionic conductivity higher than yttria-stabilized zirconia in oxidizing atmosphere. As a consequence of this, a considerable interest has been shown in application of these materials for low (400-650 o C) temperature operation of solid oxide fuel cells (SOFCs). In this paper, our experimental data about the influence of microstructure at the atomic level on electrochemical properties were reviewed in order to develop high quality doped CeO 2 electrolytes in fuel cell applications. Using this data in the present paper, our original idea for a design of nanodomain structure in doped CeO 2 electrolytes was suggested. The nanosized powders and dense sintered bodies of M doped CeO 2 (M:Sm,Gd,La,Y,Yb, and Dy) compounds were fabricated. Also nanostructural features in these specimens were introduced for conclusion of relationship between electrolytic properties and domain structure in doped CeO 2 . It is essential that the electrolytic properties in doped CeO 2 solid electrolytes reflect in changes of microstructure even down to the atomic scale. Accordingly, a combined approach of nanostructure fabrication, electrical measurement and structure characterization was required to develop superior quality doped CeO 2 electrolytes in the fuel cells. (author)

  7. High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

    Science.gov (United States)

    Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

    2018-02-01

    Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

  8. High potassium level

    Science.gov (United States)

    ... level is very high, or if you have danger signs, such as changes in an ECG . Emergency ... Seifter JL. Potassium disorders. In: Goldman L, Schafer AI, eds. Goldman-Cecil Medicine . 25th ed. Philadelphia, PA: ...

  9. An in situ vapour phase hydrothermal surface doping approach for fabrication of high performance Co3O4 electrocatalysts with an exceptionally high S-doped active surface.

    Science.gov (United States)

    Tan, Zhijin; Liu, Porun; Zhang, Haimin; Wang, Yun; Al-Mamun, Mohammad; Yang, Hua Gui; Wang, Dan; Tang, Zhiyong; Zhao, Huijun

    2015-04-04

    A facile in situ vapour phase hydrothermal (VPH) surface doping approach has been developed for fabrication of high performance S-doped Co3O4 electrocatalysts with an unprecedentedly high surface S content (>47%). The demonstrated VPH doping approach could be useful for enrichment of surface active sites for other metal oxide electrocatalysts.

  10. Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-10-15

    Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

  11. Highly Al-doped TiO2 nanoparticles produced by Ball Mill Method: structural and electronic characterization

    International Nuclear Information System (INIS)

    Santos, Desireé M. de los; Navas, Javier; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-01-01

    Highlights: • Highly Al-doped TiO 2 nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO 2 nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti 4+ ions by Al 3+ in the TiO 2 lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature

  12. Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

    Science.gov (United States)

    Das, Arkaprava; Singh, Fouran

    2018-04-01

    Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

  13. Doped titanium dioxide nanocrystalline powders with high photocatalytic activity

    International Nuclear Information System (INIS)

    Castro, A.L.; Nunes, M.R.; Carvalho, M.D.; Ferreira, L.P.; Jumas, J.-C.; Costa, F.M.; Florencio, M.H.

    2009-01-01

    Doped titanium dioxide nanopowders (M:TiO 2 ; M=Fe, Co, Nb, Sb) with anatase structure were successfully synthesized through an hydrothermal route preceded by a precipitation doping step. Structural and morphological characterizations were performed by powder XRD and TEM. Thermodynamic stability studies allowed to conclude that the anatase structure is highly stable for all doped TiO 2 prepared compounds. The photocatalytic efficiency of the synthesized nanopowders was tested and the results showed an appreciable enhancement in the photoactivity of the Sb:TiO 2 and Nb:TiO 2 , whereas no photocatalytic activity was detected for the Fe:TiO 2 and Co:TiO 2 nanopowders. These results were correlated to the doping ions oxidation states, determined by Moessbauer spectroscopy and magnetization data. - Graphical abstract: Doped titanium dioxide nanopowders (M:TiO 2 ; M=Fe, Co, Nb, Sb) with highly stable anatase structure were successfully synthesized through an hydrothermal route. The photocatalytic efficiencies of the synthesized nanopowders were tested and the results show an appreciable enhancement in the photoactivity of the Sb:TiO 2 and Nb:TiO 2 .

  14. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  15. Nuclear Magnetic Resonance Reveals Disordered Level-Crossing Physics in the Bose-Glass Regime of the Br-Doped Ni(Cl_{1-x}Br_{x})_{2}-4SC(NH_{2})_{2} Compound at a High Magnetic Field.

    Science.gov (United States)

    Orlova, Anna; Blinder, Rémi; Kermarrec, Edwin; Dupont, Maxime; Laflorencie, Nicolas; Capponi, Sylvain; Mayaffre, Hadrien; Berthier, Claude; Paduan-Filho, Armando; Horvatić, Mladen

    2017-02-10

    By measuring the nuclear magnetic resonance (NMR) T_{1}^{-1} relaxation rate in the Br (bond) doped DTN compound, Ni(Cl_{1-x}Br_{x})_{2}-4SC(NH_{2})_{2}(DTNX), we show that the low-energy spin dynamics of its high magnetic field "Bose-glass" regime is dominated by a strong peak of spin fluctuations found at the nearly doping-independent position H^{*}≅13.6  T. From its temperature and field dependence, we conclude that this corresponds to a level crossing of the energy levels related to the doping-induced impurity states. Observation of the local NMR signal from the spin adjacent to the doped Br allowed us to fully characterize this impurity state. We have thus quantified a microscopic theoretical model that paves the way to better understanding of the Bose-glass physics in DTNX, as revealed in the related theoretical study [M. Dupont, S. Capponi, and N. Laflorencie, Phys. Rev. Lett. 118, 067204 (2017).PRLTAO0031-900710.1103/PhysRevLett.118.067204].

  16. General Algorithm (High level)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. General Algorithm (High level). Iteratively. Use Tightness Property to remove points of P1,..,Pi. Use random sampling to get a Random Sample (of enough points) from the next largest cluster, Pi+1. Use the Random Sampling Procedure to approximate ci+1 using the ...

  17. High temperature compression tests performed on doped fuels

    Energy Technology Data Exchange (ETDEWEB)

    Duguay, C.; Mocellin, A.; Dehaudt, P. [Commissariat a l`Energie Atomique, CEA Grenoble (France); Fantozzi, G. [INSA Lyon - GEMPPM, Villeurbanne (France)

    1997-12-31

    The use of additives of corundum structure M{sub 2}O{sub 3} (M=Cr, Al) is an effective way of promoting grain growth of uranium dioxide. The high-temperature compressive deformation of large-grained UO{sub 2} doped with these oxides has been investigated and compared with that of pure UO{sub 2} with a standard microstructure. Such doped fuels are expected to exhibit enhanced plasticity. Their use would therefore reduce the pellet-cladding mechanical interaction and thus improve the performances of the nuclear fuel. (orig.) 5 refs.

  18. High temperature compression tests performed on doped fuels

    International Nuclear Information System (INIS)

    Duguay, C.; Mocellin, A.; Dehaudt, P.; Fantozzi, G.

    1997-01-01

    The use of additives of corundum structure M 2 O 3 (M=Cr, Al) is an effective way of promoting grain growth of uranium dioxide. The high-temperature compressive deformation of large-grained UO 2 doped with these oxides has been investigated and compared with that of pure UO 2 with a standard microstructure. Such doped fuels are expected to exhibit enhanced plasticity. Their use would therefore reduce the pellet-cladding mechanical interaction and thus improve the performances of the nuclear fuel. (orig.)

  19. Magic Doping Fractions in High-Temperature Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Komiya, Seiki; /CRIEPI, Tokyo; Chen, Han-Dong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.; Ando, Yoichi; /CRIEPI, Tokyo

    2010-01-15

    We report hole-doping dependence of the in-plane resistivity {rho}{sub ab} in a cuprate superconductor La{sub 2-x}Sr{sub x}CuO{sub 4}, carefully examined using a series of high-quality single crystals. Our detailed measurements find a tendency towards charge ordering at particular rational hole doping fractions of 1/16, 3/32, 1/8, and 3/16. This observation appears to suggest a specific form of charge order and is most consistent with the recent theoretical prediction of the checkerboard-type ordering of the Cooper pairs at rational doping fractions x = (2m + 1)/2{sup n}, with integers m and n.

  20. Universal Scaling in Highly Doped Conducting Polymer Films

    NARCIS (Netherlands)

    Kronemeijer, A. J.; Huisman, E. H.; Katsouras, I.; van Hal, P. A.; Geuns, T. C. T.; Blom, P. W. M.; van der Molen, S. J.; de Leeuw, D. M.

    2010-01-01

    Electrical transport of a highly doped disordered conducting polymer, viz. poly-3,4-ethylenedioxythiophene stabilized with poly-4-styrenesulphonic acid, is investigated as a function of bias and temperature. The transport shows universal power-law scaling with both bias and temperature. All

  1. Universal scaling in highly doped conducting polymer films

    NARCIS (Netherlands)

    Kronemeijer, A.J.; Huisman, E.H.; Katsouras, I.; Hal, P.A. van; Geuns, T.C.T.; Blom, P.W.M.; Molen, S.J. van der; Leeuw, D.M. de

    2010-01-01

    Electrical transport of a highly doped disordered conducting polymer, viz. poly-3,4-ethylenedioxythiophene stabilized with poly-4-styrenesulphonic acid, is investigated as a function of bias and temperature. The transport shows universal power-law scaling with both bias and temperature. All

  2. Surface Plasmons on Highly Doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

    2016-01-01

    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

  3. Direct Electroplating on Highly Doped Patterned Silicon Wafers

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

  4. Fabrication of Chemically Doped, High Upper Critical Field Magnesium Diboride Superconducting Wires

    Energy Technology Data Exchange (ETDEWEB)

    Marzik, James, V.

    2005-10-13

    Controlled chemical doping of magnesium diboride (MgB2) has been shown to substantially improve its superconducting properties to the levels required for high field magnets, but the doping is difficult to accomplish through the usual route of solid state reaction and diffusion. Further, superconducting cables of MgB2 are difficult to fabricate because of the friable nature of the material. In this Phase I STTR project, doped and undoped boron fibers were made by chemical vapor deposition (CVD). Several >100m long batches of doped and undoped fiber were made by CVD codeposition of boron plus dopants. Bundles of these fibers infiltrated with liquid magnesium and subsequently converted to MgB2 to form Mg-MgB2 metal matrix composites. In a parallel path, doped boron nano-sized powder was produced by a plasma synthesis technique, reacted with magnesium to produce doped MgB2 superconducting ceramic bodies. The doped powder was also fabricated into superconducting wires several meters long. The doped boron fibers and powders made in this program were fabricated into fiber-metal composites and powder-metal composites by a liquid metal infiltration technique. The kinetics of the reaction between boron fiber and magnesium metal was investigated in fiber-metal composites. It was found that the presence of dopants had significantly slowed the reaction between magnesium and boron. The superconducting properties were measured for MgB2 fibers and MgB2 powders made by liquid metal infiltration. Properties of MgB2 products (Jc, Hc2) from Phase I are among the highest reported to date for MgB2 bulk superconductors. Chemically doped MgB2 superconducting magnets can perform at least as well as NbTi and NbSn3 in high magnetic fields and still offer an improvement over the latter two in terms of operating temperature. These characteristics make doped MgB2 an effective material for high magnetic field applications, such as magnetic confined fusion, and medical MRI devices. Developing

  5. Fabrication of Chemically Doped, High Upper Critical Field Magnesium Diboride Superconducting Wires

    International Nuclear Information System (INIS)

    Marzik, James V.

    2005-01-01

    Controlled chemical doping of magnesium diboride (MgB2) has been shown to substantially improve its superconducting properties to the levels required for high field magnets, but the doping is difficult to accomplish through the usual route of solid state reaction and diffusion. Further, superconducting cables of MgB2 are difficult to fabricate because of the friable nature of the material. In this Phase I STTR project, doped and undoped boron fibers were made by chemical vapor deposition (CVD). Several >100m long batches of doped and undoped fiber were made by CVD codeposition of boron plus dopants. Bundles of these fibers infiltrated with liquid magnesium and subsequently converted to MgB2 to form Mg-MgB2 metal matrix composites. In a parallel path, doped boron nano-sized powder was produced by a plasma synthesis technique, reacted with magnesium to produce doped MgB2 superconducting ceramic bodies. The doped powder was also fabricated into superconducting wires several meters long. The doped boron fibers and powders made in this program were fabricated into fiber-metal composites and powder-metal composites by a liquid metal infiltration technique. The kinetics of the reaction between boron fiber and magnesium metal was investigated in fiber-metal composites. It was found that the presence of dopants had significantly slowed the reaction between magnesium and boron. The superconducting properties were measured for MgB2 fibers and MgB2 powders made by liquid metal infiltration. Properties of MgB2 products (Jc, Hc2) from Phase I are among the highest reported to date for MgB2 bulk superconductors. Chemically doped MgB2 superconducting magnets can perform at least as well as NbTi and NbSn3 in high magnetic fields and still offer an improvement over the latter two in terms of operating temperature. These characteristics make doped MgB2 an effective material for high magnetic field applications, such as magnetic confined fusion, and medical MRI devices. Developing

  6. High level nuclear wastes

    International Nuclear Information System (INIS)

    Lopez Perez, B.

    1987-01-01

    The transformations involved in the nuclear fuels during the burn-up at the power nuclear reactors for burn-up levels of 33.000 MWd/th are considered. Graphs and data on the radioactivity variation with the cooling time and heat power of the irradiated fuel are presented. Likewise, the cycle of the fuel in light water reactors is presented and the alternatives for the nuclear waste management are discussed. A brief description of the management of the spent fuel as a high level nuclear waste is shown, explaining the reprocessing and giving data about the fission products and their radioactivities, which must be considered on the vitrification processes. On the final storage of the nuclear waste into depth geological burials, both alternatives are coincident. The countries supporting the reprocessing are indicated and the Spanish programm defined in the Plan Energetico Nacional (PEN) is shortly reviewed. (author) 8 figs., 4 tabs

  7. ALICE High Level Trigger

    CERN Multimedia

    Alt, T

    2013-01-01

    The ALICE High Level Trigger (HLT) is a computing farm designed and build for the real-time, online processing of the raw data produced by the ALICE detectors. Events are fully reconstructed from the raw data, analyzed and compressed. The analysis summary together with the compressed data and a trigger decision is sent to the DAQ. In addition the reconstruction of the events allows for on-line monitoring of physical observables and this information is provided to the Data Quality Monitor (DQM). The HLT can process event rates of up to 2 kHz for proton-proton and 200 Hz for Pb-Pb central collisions.

  8. Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Kulagina, M. M.; Zhukov, A. E.

    2017-09-01

    The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities (high external loss), there is an increase in the lasing power component corresponding to the ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities (small external loss), higher dopant concentrations may have an opposite effect on the output power. Based on these observations, an optimal design of laser geometry and an optimal doping level are discussed.

  9. Highly stable carbon-doped Cu films on barrierless Si

    International Nuclear Information System (INIS)

    Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

    2011-01-01

    Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

  10. Optimization of E r-density profile for efficient pumping and high signal gain in Erbium-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Arzi, E.; Hassani, A.; Esmaili Seraji, F.

    2000-01-01

    Recently, the Erbium-Doped Fiber Amplifier has been shown to have a great potentiality in Fiber-Optics Communication. A model is suggested for calculating the E r-density profile, using the propagation and rate equations of a homogeneous two-level laser medium in Erbium-Doped Fiber Amplifier, such that efficient pumping and high signal gain is achieved for different fiber waveguide structure. The result of this numerical calculation shows that the gain, compared with the gain of the existing Erbium-Doped Fiber Amplifier, is higher by a factor of 3.5. This model is applicable in all active waveguides and any other dopant as well

  11. Ultrasensitive ppb-level NO2 gas sensor based on WO3 hollow nanosphers doped with Fe

    Science.gov (United States)

    Zhang, Ziyue; haq, Mahmood; Wen, Zhen; Ye, Zhizhen; Zhu, Liping

    2018-03-01

    WO3 mesoporous hollow nanospheres doped with Fe synthesized by a facile method have mesoporous hollow nanospherical like morphology, small grain size (10 nm), high crystalline quality and ultrahigh surface area (165 m2/g). XRD spectra and Raman spectra indicate the Fe doping leading to the smaller cell parameters as compared to pure WO3, and the slight distortion in the crystal lattice produces a number of defects, making it a better candidate for gas sensing. XPS analysis shows that Fe-doped WO3 mesoporous hollow nanospheres have more oxygen vacancies than pure WO3, which is beneficial to the adsorption of oxygen and NO2 and its surface reaction. The gas sensor based on Fe-WO3 exhibited excellent low ppb-level (10 ppb) NO2 detecting performance and outstanding selectivity.

  12. Highly n -doped graphene generated through intercalated terbium atoms

    Science.gov (United States)

    Daukiya, L.; Nair, M. N.; Hajjar-Garreau, S.; Vonau, F.; Aubel, D.; Bubendorff, J. L.; Cranney, M.; Denys, E.; Florentin, A.; Reiter, G.; Simon, L.

    2018-01-01

    We obtained highly n -type doped graphene by intercalating terbium atoms between graphene and SiC(0001) through appropriate annealing in ultrahigh vacuum. After terbium intercalation angle-resolved-photoelectron spectroscopy (ARPES) showed a drastic change in the band structure around the K points of the Brillouin zone: the well-known conical dispersion band of a graphene monolayer was superposed by a second conical dispersion band of a graphene monolayer with an electron density reaching 1015cm-2 . In addition, we demonstrate that atom intercalation proceeds either below the buffer layer or between the buffer layer and the monolayer graphene. The intercalation of terbium below a pure buffer layer led to the formation of a highly n -doped graphene monolayer decoupled from the SiC substrate, as evidenced by ARPES and x-ray photoelectron spectroscopy measurements. The band structure of this highly n -doped monolayer graphene showed a kink (a deviation from the linear dispersion of the Dirac cone), which has been associated with an electron-phonon coupling constant one order of magnitude larger than those usually obtained for graphene with intercalated alkali metals.

  13. Doping effects in high-T{sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Hessel Andersen, N.

    1996-11-01

    The purpose of the project has been to study how the superconducting and magnetic properties of the high temperature superconductors change as function of oxygen stoichiometry and cation doping. The primary system of investigation has been YBa{sub 2}Cu{sub 3}O{sub 6+x}, which has been studied as function of oxygen stoichiometry, 0 < x < 1, and cation doping with Al, Co and Fe on the Cu-sites and Nd and Pr on the Y-site. In these materials the hole doping into the CuO{sub 2} planes, that is necessary for superconductivity, is strongly depending on structural ordering. The static properties and the kinetics of the structural ordering process have been studied experimentally by neutron and high energy synchrotron x-ray diffraction, by Raman scattering, and by computer simulation technique. Not only the oxygen stoichiometry but also the cation doping has been shown to influence the magnetic phases, in some cases in an unexpected manner. Thus, by neutron diffraction experiments it has been shown that doping with non-magnetic Al gives rise to a new magnetic phase. A theoretical model, has been developed. The magnetic phases of the Cu and Nd ordering in NdBa{sub 2}Cu{sub 3}O{sub 6+x}, and of the Cu and Pr ordering in PrBa{sub 2}Cu{sub 3}O{sub 6+x} have been studied by neutron diffraction with the main purpose of understanding why PrBa{sub 2}Cu{sub 3}O{sub 6+x} is magnetic and non-superconducting for all oxygen stoichiometries. In NdBa:2Cu{sub 3}O{sub 6+x} studies of the magnetic flux lattice have been carried out by Small Angle Neutron Scattering. Additional structural studies of the superconducting and magnetic phases of related materials, of RENi{sub 2}B{sub 2}C (RE = rare earth), and of oxidized and cation doped materials based on La{sub 2}CuO{sub 4+{delta}} have been carried out. Methods for structural studies and analyses, and equipment for electrical and magnetic characterization have been developed. (EG) 5 tabs., 46 ills., 35 refs.

  14. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    Science.gov (United States)

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

    International Nuclear Information System (INIS)

    Geyer, Nadine; Wollschläger, Nicole; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Fuhrmann, Bodo; Leipner, Hartmut S; Jungmann, Marco; Krause-Rehberg, Reinhard

    2015-01-01

    A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H_2O_2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology. (paper)

  16. Preparation of silver doped high temperature superconductors

    International Nuclear Information System (INIS)

    Stavek, Jiri; Zapletal, Vladimir

    1989-01-01

    High temperature superconductors were prepared by the controlled double-jet precipitation to manipulate the chemical composition, composition gradients, average grain size, grain size distribution, and other factors which contribute to the actual properties and performance of HTSC. The cations (Y-Ba-Cu or Bi-Pb-Ca-Sr-Cu) and oxalic anions solutions were simultaneously separately introduced to the crystallizer with a stirred solution of gelatin under conditions where the temperature, excess of oxalic anions in solution, pH, reactant addition rate, and other reaction conditions were tightly controlled to prepare the high sinterability powder. To increase the sinterability of submicron particles of produced precursor, the silver ions were introduced at the end of the controlled double-jet precipitation. This approach improves the electrical and mechanical properties of produced HTSC specimens. The controlled double jet precipitation provides a viable technique for preparation of oxide superconductors and the process is amenable for scaling up

  17. Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

    NARCIS (Netherlands)

    Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

    2017-01-01

    In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

  18. High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

    Science.gov (United States)

    Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

    2011-07-21

    Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

  19. Evolution of electronic structure in highly charge doped MoS2 compounds

    Science.gov (United States)

    Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

    Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

  20. High blood cholesterol levels

    Science.gov (United States)

    Cholesterol - high; Lipid disorders; Hyperlipoproteinemia; Hyperlipidemia; Dyslipidemia; Hypercholesterolemia ... There are many types of cholesterol. The ones talked about most are: ... lipoprotein (HDL) cholesterol -- often called "good" cholesterol ...

  1. Evolution of magnetic and superconducting fluctuations with doping of high-Tc superconductors. An electronic Raman scattering study

    International Nuclear Information System (INIS)

    Blumberg, G.

    1998-01-01

    For YBa 2 Cu 3 O 6+δ and Bi 2 Sr 2 CaCu 2 O 3±δ superconductors, electronic Raman scattering from high- and low-energy excitations has been studied in relation to the hole doping level, temperature, and energy of the incident photons. For underdoped superconductors, it is concluded that short range antiferromagnetic (AF) correlations persist with hole doping and doped single holes are incoherent in the AF environment. Above the superconducting (SC) transition temperature T c the system exhibits a sharp Raman resonance of B 1g symmetry and about 75 meV energy and a pseudogap for electron-hole excitations below 75 meV, a manifestation of a partially coherent state forming from doped incoherent quasi-particles. The occupancy of the coherent state increases with cooling until phase ordering at T c produces a global SC state

  2. Highly efficient green light harvesting from Mg doped ZnO nanoparticles: Structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Sarla, E-mail: mail2sarlasharma@gmail.com [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Vyas, Rishi [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Neha [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Singh, Vidyadhar [Okinawa Institute of Science and Technology, Graduate University, Okinawa 9040495 (Japan); Singh, Arvind [Department of Physics, Institute of Chemical Technology, Mumbai 400 019 (India); Kataria, Vanjula; Gupta, Bipin Kumar [National Physical Laboratory (CSIR), New Delhi 110012 (India); Vijay, Y.K. [Department of Physics, University of Rajasthan, Jaipur 302055 (India)

    2013-03-05

    Graphical abstract: Demonstration of highly efficient green light emission harvesting from Mg doped ZnO nanoparticles were synthesized via facile wet chemical route with an average particle size ∼15 nm. The resulted nanoparticles exhibit intense green emission peaking at 530 nm upon 325 nm excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg and beyond it exhibits a decrees in emission. The obtained highly luminescent green emission of ZnO nanoparticle would be an ultimate choice for next generation optoelectronics device materials. Highlights: ► Zn{sub 1−x}Mg{sub x}O nanoparticles were prepared by mechanochemical processing. ► High blue emission intensity was observed contrary to previous reports. ► Blue emission is suggested to be originating from the high density of defects. ► Defect density in as-milled condition is very high resulting in high emission. ► Mg promoted non-radiative recombination and lowered intensities. -- Abstract: Highly efficient green light emission was observed from Mg doped ZnO nanoparticles synthesized via facile wet chemical route with an average particle size ∼15 nm. The XRD analysis confirmed the growth of wurtzite phase of ZnO nanoparticles. Moreover, the optical properties of these nanoparticles were investigated by different spectroscopic techniques. The resulted nanoparticles exhibit intense green emission peaking at 530 nm (2.34 eV) upon 325 nm (3.81 eV) excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg, and beyond it exhibits a decrees in emission. Furthermore, by varying the band gap from 3.50 to 3.61 eV, the PL spectra showed a near band edge (NBE) emission at wavelength around 370 nm (3.35 eV) and a broad deep level emission in the visible region. The obtained highly

  3. Spectroscopic XPEEM of highly conductive SI-doped GaN wires

    Energy Technology Data Exchange (ETDEWEB)

    Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

    2015-12-15

    Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

  4. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  5. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  6. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels

    Energy Technology Data Exchange (ETDEWEB)

    Ban, Keun-Yong [Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering; Kim, Yeongho [Korea Research Inst. of Chemistry Technology (KRICT), Daejeon (Korea, Republic of). Division of Metrology for Future Technology; Kuciauskas, Darius [National Renewable Energy Lab. (NREL), Golden, CO (United States); Bremner, Stephen P. [Univ. of New South Wales, Sydney, NSW (Australia). School of Photovoltaic and Renewable Energy Engineering; Honsberg, Christiana B. [Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering

    2016-11-10

    The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (d)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e-/dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e-/dot is found to increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the d-doping density is high enough (>4 e-/dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the d-doping, leading to reduced thermal quenching of the PL.

  7. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  8. Diffusion of ion-implanted B in high concentration P- and As-doped silicon

    International Nuclear Information System (INIS)

    Fair, R.B.; Pappas, P.N.

    1975-01-01

    The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As was studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si band gap on B diffusivity, D/sub B/. It is shown that D/sub B/ is linearly dependent on the free hole concentration, p, over the range 0.1 less than p/n/sub ie/ less than 30, where n/sub ie/ is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As). (U.S.)

  9. Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

    2017-04-15

    Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

  10. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  11. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  12. Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors

    International Nuclear Information System (INIS)

    Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P; Schmitt, F; Meevasana, W; Motoyama, E M; Lu, D H; Kim, C; Scalettar, R T

    2009-01-01

    Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

  13. SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

    Energy Technology Data Exchange (ETDEWEB)

    Al-Mumen, Haider [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Electrical Engineering, University of Babylon, Babylon (Iraq); Dong, Lixin; Li, Wen, E-mail: wenli@egr.msu.edu [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2013-12-02

    N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

  14. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  15. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  16. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun; Kaloni, T. P.; Huang, G. S.; Schwingenschlö gl, Udo

    2011-01-01

    and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p

  17. High-performace cladding-pumped erbium-doped fibre laser and amplifier

    International Nuclear Information System (INIS)

    Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Lipatov, D S; Vechkanov, N N; Guryanov, Aleksei N

    2012-01-01

    We report cladding-pumped erbium-doped fibre laser and amplifier configurations. Through fibre design optimisation, we have achieved a record-high laser slope efficiency, 40 % with respect to absorbed pump power (λ = 976 nm), and an output power of 7.5 W. The erbium-doped fibre amplifier efficiency reaches 32 %.

  18. Improving superconducting properties of YBCO high temperature superconductor by Graphene Oxide doping

    Energy Technology Data Exchange (ETDEWEB)

    Dadras, S., E-mail: dadras@alzahra.ac.ir; Dehghani, S.; Davoudiniya, M.; Falahati, S.

    2017-06-01

    In this research, we report the synthesis and characterization of YBa{sub 2}Cu{sub 3}O{sub 7-δ} (YBCO) high temperature superconductor prepared by sol-gel method and doped with Graphene Oxide (GO) in different weight percentages, 0, 0.1, 0.7 and 1 % wt. The x-ray diffraction (XRD) analysis confirms the formation of orthorhombic phase of superconductivity for all the prepared samples. We found that GO doping reduces the crystalline size of the samples. We evaluated the effects of GO doping on the normal state resistivity (ρ), superconducting transition temperature (T{sub c}) and critical current density (J{sub c}). The results show that the GO doping has a positive effect on these properties. Also, the highest J{sub c} is obtained for the 0.7 %wt GO doped YBCO compound that its critical current density is about 15 times more than the J{sub c} of pure one in 0.4 T magnetic field. The scanning electron microscope (SEM) analysis shows that there are better connections between the grains of GO doped samples. - Highlights: • Graphene Oxide doping increased the YBCO critical current density. • Graphene Oxide creates a better connection between the YBCO grains. • The normal resistivity of samples were decreased by GO doping to YBCO compounds. • Graphene Oxide doping has a positive effect on the critical transition temperature.

  19. Thermoelectric properties control due to doping level and sintering conditions for FGM thermoelectric element

    CERN Document Server

    Kajikawa, T; Shiraishi, K; Ohmori, M; Hirai, T

    1999-01-01

    Thermoelectric performance is determined with three factors, namely, Seebeck coefficient, electrical resistivity and thermal conductivity. For metal and single crystalline semiconductor, those factors have close interrelation each $9 other. However, as the sintered thermoelectric element has various levels of superstructure from macro scale and micro scale in terms of the thermoelectric mechanism, the relationship among them is more complex than that for the $9 melt- grown element, so it is suggested that the control of the temperature dependence of thermoelectric properties is possible to enhance the thermoelectric performance for wide temperature range due to FGM approach. The research $9 objective is to investigate the characteristics of the thermoelectric properties for various doping levels and hot-pressed conditions to make the thermoelectric elements for which the temperature dependence of the performance is $9 controlled due to FGM approach varying the doping levels and sintering conditions. By usage ...

  20. High-level-waste immobilization

    International Nuclear Information System (INIS)

    Crandall, J.L.

    1982-01-01

    Analysis of risks, environmental effects, process feasibility, and costs for disposal of immobilized high-level wastes in geologic repositories indicates that the disposal system safety has a low sensitivity to the choice of the waste disposal form

  1. The relationship between the doping levels and some physical ...

    Indian Academy of Sciences (India)

    solar cells, owing to its low electrical resistivity and high optical transmittance. ... In the present work, SnO2:F thin films were prepared by the spray pyrolysis (SP) tech- ..... The growth mechanism involving dislocation is a matter of importance.

  2. Thermoelectric performance of co-doped SnTe with resonant levels

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Min; Han, Yemao; Li, Laifeng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd. Pasadena, California 91125 (United States); Wang, Heng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); Snyder, G. Jeffrey [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); TMO University, Saint Petersburg 197101 (Russian Federation)

    2016-07-25

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n{sub H}) and extrinsic dopant concentration (N{sub I}, N{sub Ag}) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n{sub H}. Upon substituting extrinsic dopants beyond a certain amount, the n{sub H} changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  3. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-01

    REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

  4. Preparation and spectroscopic properties of Yb-doped and Yb-Al-codoped high silica glasses

    International Nuclear Information System (INIS)

    Qiao Yanbo; Wen Lei; Wu Botao; Ren Jinjun; Chen Danping; Qiu Jianrong

    2008-01-01

    Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm 2 , respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers

  5. Nitrogen-doped mesoporous carbons for high performance supercapacitors

    Science.gov (United States)

    Wu, Kai; Liu, Qiming

    2016-08-01

    The mesoporous carbons have been synthesized by using α-D(+)-Glucose, D-Glucosamine hydrochloride or their mixture as carbon precursors and mesoporous silicas (SBA-15 or MCF) as hard templates. The as-prepared products show a large pore volume (0.59-0.97 cm3 g-1), high surface areas (352.72-1152.67 m2 g-1) and rational nitrogen content (ca. 2.5-3.9 wt.%). The results of electrochemical tests demonstrate that both heteroatom doping and suitable pore structure play a decisive role in the performance of supercapacitors. The representative sample of SBA-15 replica obtained using D-Glucosamine hydrochloride only exhibits high specific capacitance (212.8 F g-1 at 0.5 A g-1) and good cycle durability (86.1% of the initial capacitance after 2000 cycles) in 6 M KOH aqueous electrolyte, which is attributed to the contribution of double layer capacitance and pseudo-capacitance. The excellent electrochemical performance makes it a promising electrode material for supercapacitors.

  6. The Study of Quantum Interference in Metallic Photonic Crystals Doped with Four-Level Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hatef Ali

    2010-01-01

    Full Text Available Abstract In this work, the absorption coefficient of a metallic photonic crystal doped with nanoparticles has been obtained using numerical simulation techniques. The effects of quantum interference and the concentration of doped particles on the absorption coefficient of the system have been investigated. The nanoparticles have been considered as semiconductor quantum dots which behave as a four-level quantum system and are driven by a single coherent laser field. The results show that changing the position of the photonic band gap about the resonant energy of the two lower levels directly affects the decay rate, and the system can be switched between transparent and opaque states if the probe laser field is tuned to the resonance frequency. These results provide an application for metallic nanostructures in the fabrication of new optical switches and photonic devices.

  7. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Science.gov (United States)

    Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

    2017-10-01

    An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

  8. ACCEPTED LEVEL OF RISK OF DOPING USE IN THE VIEW OF YOUNG ATHLETES

    Directory of Open Access Journals (Sweden)

    H. Mroczkowska

    2011-09-01

    Full Text Available The paper is a continuation of studies aimed at verifying the hypothesis from decision theory stating that the risk in action is the greatest when the probability of loss is high, and the higher the value attached to that which is lost as a consequence of this action. Students of the Sport Championship School (n = 89 from fencing, track and field, martial arts and football classes took part in the studies. The age of the study participants was in the range 16-18 years. The experimental technique “Perception of risk of doping” (author: H. Mroczkowska was used to help to determine the individual ranking of possible losses of valued goods as a consequence of doping use (loss of health; loss of medal; loss of physical attractiveness; loss of emotional balance; loss of material reward; loss of respect from others. It turns out that the hierarchy of the values that may be lost as a consequence of doping variously influences the assessment of the real and subjective risk and concerns various areas of evaluation. The assessment of the objective risk depends more on the rank of what may be lost (health than on what may be gained (medals. Moreover, direct external sanctions are not perceived as more probable than remote personal consequences (psychophysical health. In the real situation of decision making about doping, the internalized hierarchy of values has no greater significance; in the real danger of a doping disclosure, everything that can be lost turns out to be equally valuable.

  9. Watt-level ~2 μm laser output in Tm3+-doped tungsten tellurite glass double-cladding fiber.

    Science.gov (United States)

    Li, Kefeng; Zhang, Guang; Hu, Lili

    2010-12-15

    We report, for the first time to the best of our knowledge, a watt level cw fiber laser at ~2 μm from a piece of 40-cm-long newly developed highly thulium-doped (3.76 × 10(20) ions/cm(3)) tungsten tellurite glass double cladding fiber pumped by a commercial 800 nm laser diode. The maximum output power of the fiber laser reaches 1.12 W. The slope efficiency and the optical-optical efficiency with respect to the absorbed pump are 20% and 16%, respectively. The lasing threshold is 1.46 W, and the lasing wavelength is centered at 1937 nm.

  10. Biomineralization-Inspired Synthesis of Cerium-Doped Carbonaceous Nanoparticles for Highly Hydroxyl Radical Scavenging Activity

    Science.gov (United States)

    Zou, Shenqiang; Zhu, Xiaofang; Zhang, Lirong; Guo, Fan; Zhang, Miaomiao; Tan, Youwen; Gong, Aihua; Fang, Zhengzou; Ju, Huixiang; Wu, Chaoyang; Du, Fengyi

    2018-03-01

    Cerium oxide nanoparticles recently have received extensive attention in biomedical applications due to their excellent anti-oxidation performance. In this study, a simple, mild, and green approach was developed to synthesize cerium-doped carbonaceous nanoparticles (Ce-doped CNPs) using bio-mineralization of bull serum albumin (BSA) as precursor. The resultant Ce-doped CNPs exhibited uniform and ultrasmall morphology with an average size of 14.7 nm. XPS and FTIR results revealed the presence of hydrophilic group on the surface of Ce-doped CNPs, which resulted in excellent dispersity in water. The CCK-8 assay demonstrated that Ce-doped CNPs possessed favorable biocompatibility and negligible cytotoxicity. Using H2O2-induced reactive oxygen species (ROS) as model, Ce-doped CNPs showed highly hydroxyl radical scavenging capability. Furthermore, flow cytometry and live-dead staining results indicated that Ce-doped CNPs protected cells from H2O2-induced damage in a dose-dependent effect, which provided a direct evidence for anti-oxidative performance. These findings suggest that Ce-doped CNPs as novel ROS scavengers may provide a potential therapeutic prospect in treating diseases associated with oxidative stress.

  11. High Level Radioactive Waste Management

    International Nuclear Information System (INIS)

    1991-01-01

    The proceedings of the second annual international conference on High Level Radioactive Waste Management, held on April 28--May 3, 1991, Las Vegas, Nevada, provides information on the current technical issue related to international high level radioactive waste management activities and how they relate to society as a whole. Besides discussing such technical topics as the best form of the waste, the integrity of storage containers, design and construction of a repository, the broader social aspects of these issues are explored in papers on such subjects as conformance to regulations, transportation safety, and public education. By providing this wider perspective of high level radioactive waste management, it becomes apparent that the various disciplines involved in this field are interrelated and that they should work to integrate their waste management activities. Individual records are processed separately for the data bases

  12. High-level Petri Nets

    DEFF Research Database (Denmark)

    various journals and collections. As a result, much of this knowledge is not readily available to people who may be interested in using high-level nets. Within the Petri net community this problem has been discussed many times, and as an outcome this book has been compiled. The book contains reprints...... of some of the most important papers on the application and theory of high-level Petri nets. In this way it makes the relevant literature more available. It is our hope that the book will be a useful source of information and that, e.g., it can be used in the organization of Petri net courses. To make......High-level Petri nets are now widely used in both theoretical analysis and practical modelling of concurrent systems. The main reason for the success of this class of net models is that they make it possible to obtain much more succinct and manageable descriptions than can be obtained by means...

  13. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  14. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang; Ying, Pengzhan; Wang, Lin; Wei, Guodong; Gao, Fengmei; Zheng, Jinju; Shang, Minhui; Yang, Zuobao; Yang, Weiyou; Wu, Tao

    2015-01-01

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  15. Structural, thermal and spectroscopic properties of highly Er3+-doped novel oxyfluoride glasses for photonic application

    Energy Technology Data Exchange (ETDEWEB)

    Kesavulu, C.R. [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Sreedhar, V.B.; Jayasankar, C.K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Jang, Kiwan [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo, E-mail: ssyi@silla.ac.kr [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of)

    2014-03-01

    Graphical abstract: - Highlights: • Er{sup 3+}-doped novel oxyfluoride glasses have been prepared by melt quenching technique. • Structural, thermal and spectroscopic properties have been carried out. • SALSFEr glasses exhibit intense green and weak red emissions at 365 nm excitation. • Major laser transition for Er{sup 3+} ion in SALSFEr glasses is {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} (1.53 μm). • These results suggest the possibility of using SALSFEr glasses as photonic devices. - Abstract: The Er{sup 3+}-doped novel oxyfluoride glasses of composition (43 − x)SiO{sub 2}–10Al{sub 2}O{sub 3}–24LiF–23SrF{sub 2}–xEr{sub 2}O{sub 3}, where x = 1.0, 2.0, 4.0 and 6.0 mol%, have been prepared by conventional melt quenching technique and are characterized through X-ray diffraction (XRD), differential thermal analysis (DTA), Raman, Fourier transform infrared (FT-IR) analysis, optical absorption spectra, visible (vis) and near-infrared (NIR) emission spectra measurements. Judd–Ofelt (JO) intensity parameters (Ω{sub λ}, λ = 2, 4 and 6) have been derived from the absorption spectrum of 1.0 mol% Er{sub 2}O{sub 3} doped glass and are in turn used to calculate radiative properties for the important luminescent levels of Er{sup 3+} ions. The studied glasses show intense green and weak red visible emissions under 365 nm excitation. The decrease in visible emission intensities with concentration of Er{sup 3+} ions has been explained due to energy transfer processes between Er{sup 3+} ions. Upon excitation at 980 nm laser diode, an intense 1.53 μm NIR emission has been observed with the maximum full width at half maximum (FWHM) for Er{sup 3+}-doped oxyfluoride glasses. The higher Er{sup 3+} ion doping capability and relatively high gain and broad emission at 1.5 μm are the most notable features of these glasses to realize efficient short-length optical amplifiers.

  16. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  17. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  18. Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates

    KAUST Repository

    Khan, M. A.; Bhansali, Unnat Sampatraj; Zhang, Xixiang; Saleh, Moussa M.; Odeh, Ihab; Alshareef, Husam N.

    2012-01-01

    classical ferroelectric and dielectric responses, including series resistance effects. The improved device characteristics obtained using highly conducting doped PEDOT:PSS suggest that it may be used both as an electrode and as global interconnect for all

  19. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  20. Efficient high power 2 micron Tm3+-Doped Fiber Laser, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of new Tm3+ doped germanate glass fibers for efficient high power 2 micron fiber lasers capable of generating an output power of...

  1. Electrochemical Properties for Co-Doped Pyrite with High Conductivity

    Directory of Open Access Journals (Sweden)

    Yongchao Liu

    2015-09-01

    Full Text Available In this paper, the hydrothermal method was adopted to synthesize nanostructure Co-doped pyrite (FeS2. The structural properties and morphology of the synthesized materials were characterized using X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. Co in the crystal lattice of FeS2 could change the growth rate of different crystal planes of the crystal particles, which resulted in various polyhedrons with clear faces and sharp outlines. In addition, the electrochemical performance of the doping pyrite in Li/FeS2 batteries was evaluated using the galvanostatic discharge test, cyclic voltammetry and electrochemical impedance spectroscopy. The results showed that the discharge capacity of the doped material (801.8 mAh·g−1 with a doping ratio of 7% was significantly higher than that of the original FeS2 (574.6 mAh·g−1 because of the enhanced conductivity. Therefore, the doping method is potentially effective for improving the electrochemical performance of FeS2.

  2. Highly improved ethanol gas-sensing performance of mesoporous nickel oxides nanowires with the stannum donor doping

    Science.gov (United States)

    Wei, Junqi; Li, Xiaoqing; Han, Yanbing; Xu, Jingcai; Jin, Hongxiao; Jin, Dingfeng; Peng, Xiaoling; Hong, Bo; Li, Jing; Yang, Yanting; Ge, Hongliang; Wang, Xinqing

    2018-06-01

    Mesoporous nickel oxides (NiO) and stannum(Sn)-doped NiO nanowires (NWs) were synthesized by using SBA-15 templates with the nanocasting method. X-ray diffraction, transmission electron microscope, energy dispersive spectrometry, nitrogen adsorption/desorption isotherm and UV–vis spectrum were used to characterize the phase structure, components and microstructure of the as-prepared samples. The gas-sensing analysis indicated that the Sn-doping could greatly improve the ethanol sensitivity for mesoporous NiO NWs. With the increasing Sn content, the ethanol sensitivity increased from 2.16 for NiO NWs up to the maximum of 15.60 for Ni0.962Sn0.038O1.038, and then decreased to 12.24 for Ni0.946Sn0.054O1.054 to 100 ppm ethanol gas at 340 °C. The high surface area from the Sn-doping improved the adsorption of oxygen on the surface of NiO NWs, resulting in the smaller surface resistance in air. Furthermore, owing to the recombination of the holes in hole-accumulation lay with the electrons from the donor impurity level and the increasing the body defects for Sn-doping, the total resistance in ethanol gas enhanced greatly. It was concluded that the sensitivity of Sn-doped NiO NWs based sensor could be greatly improved by the higher surface area and high-valence donor substitution from Sn-doping.

  3. High-Level Radioactive Waste.

    Science.gov (United States)

    Hayden, Howard C.

    1995-01-01

    Presents a method to calculate the amount of high-level radioactive waste by taking into consideration the following factors: the fission process that yields the waste, identification of the waste, the energy required to run a 1-GWe plant for one year, and the uranium mass required to produce that energy. Briefly discusses waste disposal and…

  4. High-level radioactive wastes

    International Nuclear Information System (INIS)

    Grissom, M.C.

    1982-10-01

    This bibliography contains 812 citations on high-level radioactive wastes included in the Department of Energy's Energy Data Base from January 1981 through July 1982. These citations are to research reports, journal articles, books, patents, theses, and conference papers from worldwide sources. Five indexes are provided: Corporate Author, Personal Author, Subject, Contract Number, and Report Number

  5. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Altintas Yildirim, Ozlem, E-mail: ozlemaltintas@gmail.com [Department of Metallurgical and Materials Engineering, Selcuk University, Konya (Turkey); Arslan, Hanife; Sönmezoğlu, Savaş [Department of Metallurgical and Materials Engineering, Karamanoglu Mehmetbey University, Karaman (Turkey); Nanotechnology R& D Laboratory, Karamanoglu Mehmetbey University, Karaman (Turkey)

    2016-12-30

    Highlights: • Photocatalytically active Co-ZnO thin film was obtained by sol-gel method. • Co{sup 2+} doping narrowed the band gap of pure ZnO to an extent of 3.18 eV. • Co-ZnO was effective in MB degradation under visible light. • Optimum dopant content to show high performance was 3 at.%. - Abstract: Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol–gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co{sup 2+} ions were observed to be substitutionally incorporated into Zn{sup 2+} sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  6. Effects of low-level Ag doping on Bi2Sr2CaCu2O8+x

    International Nuclear Information System (INIS)

    Deis, T.A.; Eror, N.G.; Krishnaraj, P.; Prorok, B.C.; Lelovic, M.; Balachandran, U.

    1995-07-01

    Bi 2 Sr 2 CaCu 2 O 8 has been doped with silver, up to 10,000 ppm, in three ways: excess additions, substitution of Ag for Bi, and substitution of Ag for Sr. Effects of doping on the c-axis lattice parameter and critical temperature (T c ) were measured. Effects from doing were only observed in slow-cooled [10 degree/hr] oxygen equilibrated samples. Doping by excess additions caused a small decrease in T c and an increase in the c-axis length of the lattice. Doping by substitution, compared to excess Ag additions, caused a larger decrease in T c and higher c-axis values for doping levels up to 1,000 ppm. Doping by substitution at higher levels (1,000--10,000 ppm) caused T c to increase and the c-axis to decrease. Samples with similar substitutional doping levels exhibited comparable T c values and samples with Ag substituted for Sr consistently exhibited higher c-axis values than samples that had equivalent amounts of Ag substituted for Bi

  7. RPython high-level synthesis

    Science.gov (United States)

    Cieszewski, Radoslaw; Linczuk, Maciej

    2016-09-01

    The development of FPGA technology and the increasing complexity of applications in recent decades have forced compilers to move to higher abstraction levels. Compilers interprets an algorithmic description of a desired behavior written in High-Level Languages (HLLs) and translate it to Hardware Description Languages (HDLs). This paper presents a RPython based High-Level synthesis (HLS) compiler. The compiler get the configuration parameters and map RPython program to VHDL. Then, VHDL code can be used to program FPGA chips. In comparison of other technologies usage, FPGAs have the potential to achieve far greater performance than software as a result of omitting the fetch-decode-execute operations of General Purpose Processors (GPUs), and introduce more parallel computation. This can be exploited by utilizing many resources at the same time. Creating parallel algorithms computed with FPGAs in pure HDL is difficult and time consuming. Implementation time can be greatly reduced with High-Level Synthesis compiler. This article describes design methodologies and tools, implementation and first results of created VHDL backend for RPython compiler.

  8. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  9. Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

    DEFF Research Database (Denmark)

    Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

    2015-01-01

    The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air...... to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz...

  10. Temperature and doping dependence of the high-energy kink in cuprates.

    Science.gov (United States)

    Zemljic, M M; Prelovsek, P; Tohyama, T

    2008-01-25

    It is shown that spectral functions within the extended t-J model, evaluated using the finite-temperature diagonalization of small clusters, exhibit the high-energy kink in single-particle dispersion consistent with recent angle-resolved photoemission results on hole-doped cuprates. The kink and waterfall-like features persist up to large doping and to temperatures beyond J; hence, the origin can be generally attributed to strong correlations and incoherent hole propagation at large binding energies. In contrast, our analysis predicts that electron-doped cuprates do not exhibit these phenomena in photoemission.

  11. AC measurements on uranium doped high temperature superconductors

    International Nuclear Information System (INIS)

    Eisterer, M.

    1999-11-01

    The subject of this thesis is the influence of fission tracks on the superconducting properties of melt textured Y-123. The critical current densities, the irreversibility lines and the transition temperature were determined by means of ac measurements. The corresponding ac techniques are explored in detail. Deviations of the ac signal from the expectations according to the Bean model were explained by the dependence of the shielding currents on the electric field. This explanation is supported by the influence of the ac amplitude and frequency on the critical current density but also by a comparison of the obtained data with other experimental techniques. Y-123 has to be doped with uranium in order to induce fission tracks. Uranium forms normal conducting clusters, which are nearly spherical, with a diameter of about 300 nm. Fission of uranium-235 by thermal neutrons creates two high energy ions with a total energy of about 160 MeV. Each of these fission products induces a linear defect with a diameter of about 10 nm. The length of one fission track is 2-4 μm. At 77 K the critical current density is enhanced by the pinning action of the uranium clusters, compared to undoped samples. With decreasing temperature this influence becomes negligible. The critical current densities are strongly enhanced due to the irradiation. At low magnetic fields we find extremely high values for melt textured materials, e.g. 2.5x10 9 Am -2 at 77 K and 0.25 T or 6x10 10 Am -2 at 5 K. Since the critical current was found to be inverse proportional to the square root of the applied magnetic field it decreases rapidly as the field increases. This behavior is predicted by simple theoretical considerations, but is only valid at low temperatures as well as in low magnetic fields at high temperatures. At high fields the critical current drops more rapidly. The irreversibility lines are only slightly changed by this irradiation technique. Only a small shift to higher fields and temperatures

  12. Highly efficient cobalt-doped carbon nitride polymers for solvent-free selective oxidation of cyclohexane

    Directory of Open Access Journals (Sweden)

    Yu Fu

    2017-04-01

    Full Text Available Selective oxidation of saturated hydrocarbons with molecular oxygen has been of great interest in catalysis, and the development of highly efficient catalysts for this process is a crucial challenge. A new kind of heterogeneous catalyst, cobalt-doped carbon nitride polymer (g-C3N4, was harnessed for the selective oxidation of cyclohexane. X-ray diffraction, Fourier transform infrared spectra and high resolution transmission electron microscope revealed that Co species were highly dispersed in g-C3N4 matrix and the characteristic structure of polymeric g-C3N4 can be retained after Co-doping, although Co-doping caused the incomplete polymerization to some extent. Ultraviolet–visible, Raman and X-ray photoelectron spectroscopy further proved the successful Co doping in g-C3N4 matrix as the form of Co(IIN bonds. For the selective oxidation of cyclohexane, Co-doping can markedly promote the catalytic performance of g-C3N4 catalyst due to the synergistic effect of Co species and g-C3N4 hybrid. Furthermore, the content of Co largely affected the activity of Co-doped g-C3N4 catalysts, among which the catalyst with 9.0 wt% Co content exhibited the highest yield (9.0% of cyclohexanone and cyclohexanol, as well as a high stability. Meanwhile, the reaction mechanism over Co-doped g-C3N4 catalysts was elaborated. Keywords: Selective oxidation of cyclohexane, Oxygen oxidant, Carbon nitride, Co-doping

  13. Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

    Science.gov (United States)

    Pal, Bappaditya; Giri, P K

    2011-10-01

    Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

  14. Nitrogen and phosphorus co-doped carbon hollow spheres derived from polypyrrole for high-performance supercapacitor electrodes

    Science.gov (United States)

    Lv, Bingjie; Li, Peipei; Liu, Yan; Lin, Shanshan; Gao, Bifen; Lin, Bizhou

    2018-04-01

    Nitrogen and phosphorus co-doped carbon hollow spheres (NPCHSs) have been prepared by a carbonization and subsequent chemical activation route using dehydrated polypyrrole hollow spheres as the precursor and KOH as the activating agent. NPCHSs are interconnected into a unique 3D porous network, which endows the as-prepared carbon to exhibit a large specific surface area of 1155 m2 g-1 and a high specific capacitance of 232 F g-1 at a current density of 1 A g-1. The as-obtained NPCHSs present a high-level heteroatom doping with N, O and P contents of 11.4, 6.7 and 3.5 wt%, respectively. The capacitance of NPCHSs has been retained at 89.1% after 5000 charge-discharge cycles at a relatively high current density of 5 A g-1. Such excellent performance suggests that NPCHSs are attractive electrode candidates for electrical double layer capacitors.

  15. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Yang, J.; Li, X.; Le, L. C.; He, X. G.; Liu, W.; Li, X. J.; Liang, F. [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, B. S.; Yang, H. [Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Y. T.; Du, G. T. [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 (China)

    2016-03-15

    In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  16. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Directory of Open Access Journals (Sweden)

    P. Chen

    2016-03-01

    Full Text Available In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  17. Hydrogenation of gold-related levels in silicon by electrolytic doping

    International Nuclear Information System (INIS)

    Pearton, S.J.; Hansen, W.L.; Haller, E.E.; Kahn, J.M.

    1984-01-01

    The deep gold-related donor and acceptor levels in silicon have been neutralized to several μm depth by introducing atomic hydrogen using an electrolytic method. Using phosphoric or sulfuric acid as the electrolyte, it is possible to dope the crystalline silicon with hydrogen at elevated temperatures (200--280 0 C) allowing direct comparison with other means of introduction, such as hydrogen plasma exposure. We find the electrolytic method is not as efficient as plasma treatment for the same conditions, possibly due to oxide formation during the immersion in the acid

  18. Simulation of core-level binding energy shifts in germanium-doped lead telluride crystals

    International Nuclear Information System (INIS)

    Zyubin, A.S.; Dedyulin, S.N.; Yashina, L.V.; Shtanov, V.I.

    2007-01-01

    To simulate the changes in core-level binding energies in germanium-doped lead telluride, cluster calculations of the changes in the electrostatic potential at the corresponding centers have been performed. Different locations of the Ge atom in the crystal bulk have been considered: near vacancies, near another dopant site, and near the surface. For calculating the potential in the clusters that model the bulk and the surface of the lead telluride crystal (c-PbTe), the electron density obtained in the framework of the Hartree-Fock and hybrid density functional theory (DFT) methods has been used [ru

  19. Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates

    KAUST Repository

    Khan, M. A.

    2012-10-03

    Flexible ferroelectric capacitors with doped polymer electrodes have been fabricated on plastic substrates with performance as good as metal electrodes. The effect of doping on the morphology of polymer electrodes and its impact on device performance have been studied. Improved fatigue characteristics using doped and undoped poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) electrodes versus metal electrodes are observed. It is shown that the polymer electrodes follow classical ferroelectric and dielectric responses, including series resistance effects. The improved device characteristics obtained using highly conducting doped PEDOT:PSS suggest that it may be used both as an electrode and as global interconnect for all-polymer transparent circuits on flexible substrates.

  20. Superconductivity. Quasiparticle mass enhancement approaching optimal doping in a high-T(c) superconductor.

    Science.gov (United States)

    Ramshaw, B J; Sebastian, S E; McDonald, R D; Day, James; Tan, B S; Zhu, Z; Betts, J B; Liang, Ruixing; Bonn, D A; Hardy, W N; Harrison, N

    2015-04-17

    In the quest for superconductors with higher transition temperatures (T(c)), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. Recent experiments have suggested the existence of the requisite broken-symmetry phase in the high-T(c) cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. We used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa2Cu3O(6+δ) over a wide range of doping, and observed magnetic quantum oscillations that reveal a strong enhancement of the quasiparticle effective mass toward optimal doping. This mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p(crit) ≈ 0.18. Copyright © 2015, American Association for the Advancement of Science.

  1. Gradient Self-Doped CuBi2O4 with Highly Improved Charge Separation Efficiency.

    Science.gov (United States)

    Wang, Fuxian; Septina, Wilman; Chemseddine, Abdelkrim; Abdi, Fatwa F; Friedrich, Dennis; Bogdanoff, Peter; van de Krol, Roel; Tilley, S David; Berglund, Sean P

    2017-10-25

    A new strategy of using forward gradient self-doping to improve the charge separation efficiency in metal oxide photoelectrodes is proposed. Gradient self-doped CuBi 2 O 4 photocathodes are prepared with forward and reverse gradients in copper vacancies using a two-step, diffusion-assisted spray pyrolysis process. Decreasing the Cu/Bi ratio of the CuBi 2 O 4 photocathodes introduces Cu vacancies that increase the carrier (hole) concentration and lowers the Fermi level, as evidenced by a shift in the flat band toward more positive potentials. Thus, a gradient in Cu vacancies leads to an internal electric field within CuBi 2 O 4 , which can facilitate charge separation. Compared to homogeneous CuBi 2 O 4 photocathodes, CuBi 2 O 4 photocathodes with a forward gradient show highly improved charge separation efficiency and enhanced photoelectrochemical performance for reduction reactions, while CuBi 2 O 4 photocathodes with a reverse gradient show significantly reduced charge separation efficiency and photoelectrochemical performance. The CuBi 2 O 4 photocathodes with a forward gradient produce record AM 1.5 photocurrent densities for CuBi 2 O 4 up to -2.5 mA/cm 2 at 0.6 V vs RHE with H 2 O 2 as an electron scavenger, and they show a charge separation efficiency of 34% for 550 nm light. The gradient self-doping accomplishes this without the introduction of external dopants, and therefore the tetragonal crystal structure and carrier mobility of CuBi 2 O 4 are maintained. Lastly, forward gradient self-doped CuBi 2 O 4 photocathodes are protected with a CdS/TiO 2 heterojunction and coated with Pt as an electrocatalyst. These photocathodes demonstrate photocurrent densities on the order of -1.0 mA/cm 2 at 0.0 V vs RHE and evolve hydrogen with a faradaic efficiency of ∼91%.

  2. Enhanced mass diffusion phenomena in highly defective doped ceria

    DEFF Research Database (Denmark)

    Esposito, Vincenzo; Ni, De Wei; He, Zeming

    2013-01-01

    The densification and grain growth of the solid state ionic conductor material Ce0.9Gd0.1O1.95−δ (i.e. GDC10, gadolinium-doped ceria, with Gd 10mol.%) are analysed for nanometric and fine powders of various particle sizes, both in air and in a 9vol.% H2–N2 mixture. Due to a dominant solute drag...

  3. High-power microcavity lasers based on highly erbium-doped sol-gel aluminosilicate glasses

    International Nuclear Information System (INIS)

    Le Ngoc Chung; Chu Thi Thu Ha; Nguyen Thu Trang; Pham Thu Nga; Pham Van Hoi; Bui Van Thien

    2006-01-01

    High-power whispering-gallery-mode (WGM) lasing from highly erbium-doped sol-gel aluminosilicate microsphere cavity coupled to a half-tapered optical fiber is presented. The lasing output power as high as 0.45 mW (-3.5 dBm) was obtained from sol-gel glass microsphere cavity with diameters in the range of 40-150 μm. The sol-gel method for making highly concentration Er-doped aluminosilicate glasses with Er-ion concentrations from 0.125 to 0.65 mol% of Er 3+ is described. Controlling collected lasing wavelength at each WGM is possible by adjusting the distance between the half-taper fiber and the microcavity and by diameter of the waist of half-taper fiber. Using the analytic formulas we calculated the TE and TM lasing modes and it is shown that the experimental results are in good agreement with the calculation prediction

  4. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  5. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  6. Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ruess, F J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Goh, K E J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Butcher, M J [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Reusch, T C G [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Oberbeck, L [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Weber, B [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Hamilton, A R [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Simmons, M Y [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia)

    2007-01-31

    We demonstrate the use of a scanning tunnelling microscope (STM) to pattern buried, highly planar phosphorus-doped silicon wires with widths down to the sub-10 nm level. We confirm the structural integrity of these wires using both buried dopant imaging techniques and ex situ electrical characterization. Four terminal I-V characteristics at 4 K show ohmic behaviour for all wires with resistivities between 1 and 24 x 10{sup -8} {omega} cm. Magnetotransport measurements reveal that conduction is dominated by disordered scattering with quantum corrections consistent with 2D weak localization theory. Our results show that these quantum corrections become more pronounced as the electron phase coherence length approaches the width of the wire.

  7. Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology

    Science.gov (United States)

    Faheem, M.; Zhang, Y.; Dai, X.

    2018-03-01

    The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1-xGex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40 × 1018-8.7 × 1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to deend on B doping. For the undoped samples, the difference is 0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B-doped (8.7 × 1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard's law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B-doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM's (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.

  8. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Plasma Doping - Enabling Technology for High Dose Logic and Memory Applications

    International Nuclear Information System (INIS)

    Miller, T.; Godet, L.; Papasouliotis, G. D.; Singh, V.

    2008-01-01

    As logic and memory device dimensions shrink with each generation, there are more high dose implants at lower energies. Examples include dual poly gate (also referred to as counter-doped poly), elevated source drain and contact plug implants. Plasma Doping technology throughput and dopant profile benefits at these ultra high dose and lower energy conditions have been well established [1,2,3]. For the first time a production-worthy plasma doping implanter, the VIISta PLAD tool, has been developed with unique architecture suited for precise and repeatable dopant placement. Critical elements of the architecture include pulsed DC wafer bias, closed-loop dosimetry and a uniform low energy, high density plasma source. In this paper key performance metrics such as dose uniformity, dose repeatability and dopant profile control will be presented that demonstrate the production-worthiness of the VIISta PLAD tool for several high dose applications.

  10. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

    2018-05-01

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  11. Crumpled Nitrogen-Doped Graphene for Supercapacitors with High Gravimetric and Volumetric Performances.

    Science.gov (United States)

    Wang, Jie; Ding, Bing; Xu, Yunling; Shen, Laifa; Dou, Hui; Zhang, Xiaogang

    2015-10-14

    Graphene is considered a promising electrochemical capacitors electrode material due to its high surface area and high electrical conductivity. However, restacking interactions between graphene nanosheets significantly decrease the ion-accessible surface area and impede electronic and ionic transfer. This would, in turn, severely hinder the realization of high energy density. Herein, we report a strategy for preparation of few-layer graphene material with abundant crumples and high-level nitrogen doping. The two-dimensional graphene nanosheets (CNG) feature high ion-available surface area, excellent electronic and ion transfer properties, and high packing density, permitting the CNG electrode to exhibit excellent electrochemical performance. In ionic liquid electrolyte, the CNG electrode exhibits gravimetric and volumetric capacitances of 128 F g(-1) and 98 F cm(-3), respectively, achieving gravimetric and volumetric energy densities of 56 Wh kg(-1) and 43 Wh L(-1). The preparation strategy described here provides a new approach for developing a graphene-based supercapacitor with high gravimetric and volumetric energy densities.

  12. Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

    1990-01-01

    The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

  13. Electrical and optical deep level spectroscopy on Os doped p-InP

    International Nuclear Information System (INIS)

    Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

    1997-01-01

    Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

  14. Removing high-level contaminants

    International Nuclear Information System (INIS)

    Wallace, Paula

    2013-01-01

    Full text: Using biomimicry, an Australian cleantech innovation making inroads intoChinas's industrial sector offers multiple benefits to miners and processors in Australia. Stephen Shelley, the executive chairman of Creative Water Technology (CWT), was on hand at a recent trade show to explain how his Melbourne company has developed world-class techniques in zero liquid discharge and fractional crystallization of minerals to apply to a wide range of water treatment and recycling applications. “Most existing technologies operate with high energy distillation, filters or biological processing. CWT's appliance uses a low temperature, thermal distillation process known as adiabatic recovery to desalinate, dewater and/or recycle highly saline and highly contaminated waste water,” said Shelley. The technology has been specifically designed to handle the high levels of contaminant that alternative technologies struggle to process, with proven water quality results for feed water samples with TDS levels over 300,000ppm converted to clean water with less than 20ppm. Comparatively, reverse osmosis struggles to process contaminant levels over 70,000ppm effectively. “CWT is able to reclaim up to 97% clean usable water and up to 100% of the contaminants contained in the feed water,” said Shelley, adding that soluble and insoluble contaminants are separately extracted and dried for sale or re-use. In industrial applications CWT has successfully processed feed water with contaminant levels over 650,000 mg/1- without the use of chemicals. “The technology would be suitable for companies in oil exploration and production, mining, smelting, biofuels, textiles and the agricultural and food production sectors,” said Shelley. When compared to a conventional desalination plant, the CWT system is able to capture the value in the brine that most plants discard, not only from the salt but the additional water it contains. “If you recover those two commodities... then you

  15. Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

    Science.gov (United States)

    Huang, B.

    2016-07-01

    We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

  16. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  17. Distribution of caffeine levels in urine in different sports in relation to doping control before and after the removal of caffeine from the WADA doping list.

    Science.gov (United States)

    Van Thuyne, W; Delbeke, F T

    2006-09-01

    Caffeine concentrations were measured in the urine of 4633 athletes tested for doping control in the Ghent Doping Control Laboratory in 2004. Determination of these concentrations was done using an alkaline extraction with a mixture of dichloromethane and methanol (9 : 1; v/v) followed by high performance liquid chromatography and ultraviolet detection (HPLC-UV). The method was validated according to ISO 17 025 standards (International Organisation for Standardisation). Quantification was done by using a linear calibration curve in the range from 0 to 20 microg/ml. The limit of quantification (LOQ) was 0.10 microg/ml. Because the results were not normally distributed, transformation of the data was done to evaluate the difference in detected concentrations in several sports. This resulted in an overall average concentration of 1.12 +/- 2.68 microg/ml. Comparison of the most frequently tested sports in 2004 demonstrated that caffeine concentrations in samples originating from power lifters are significantly higher in comparison to urines taken in other sports. Also, a significant difference between caffeine concentrations found in cycling and concentrations found in other sports, including athletics and some ball sports, was observed. A comparison was made between results obtained in 2004 and results obtained before the removal of caffeine from the WADA (World Anti-Doping Agency) doping list indicating that average caffeine concentrations decreased after the withdrawal of caffeine from the list of prohibited substances. The overall percentage of positive samples between the two periods remained the same although the percentage of positive samples noticed in cycling increased after the removal of caffeine from the doping list.

  18. High level white noise generator

    International Nuclear Information System (INIS)

    Borkowski, C.J.; Blalock, T.V.

    1979-01-01

    A wide band, stable, random noise source with a high and well-defined output power spectral density is provided which may be used for accurate calibration of Johnson Noise Power Thermometers (JNPT) and other applications requiring a stable, wide band, well-defined noise power spectral density. The noise source is based on the fact that the open-circuit thermal noise voltage of a feedback resistor, connecting the output to the input of a special inverting amplifier, is available at the amplifier output from an equivalent low output impedance caused by the feedback mechanism. The noise power spectral density level at the noise source output is equivalent to the density of the open-circuit thermal noise or a 100 ohm resistor at a temperature of approximately 64,000 Kelvins. The noise source has an output power spectral density that is flat to within 0.1% (0.0043 db) in the frequency range of from 1 KHz to 100 KHz which brackets typical passbands of the signal-processing channels of JNPT's. Two embodiments, one of higher accuracy that is suitable for use as a standards instrument and another that is particularly adapted for ambient temperature operation, are illustrated in this application

  19. High level white noise generator

    Science.gov (United States)

    Borkowski, Casimer J.; Blalock, Theron V.

    1979-01-01

    A wide band, stable, random noise source with a high and well-defined output power spectral density is provided which may be used for accurate calibration of Johnson Noise Power Thermometers (JNPT) and other applications requiring a stable, wide band, well-defined noise power spectral density. The noise source is based on the fact that the open-circuit thermal noise voltage of a feedback resistor, connecting the output to the input of a special inverting amplifier, is available at the amplifier output from an equivalent low output impedance caused by the feedback mechanism. The noise power spectral density level at the noise source output is equivalent to the density of the open-circuit thermal noise or a 100 ohm resistor at a temperature of approximately 64,000 Kelvins. The noise source has an output power spectral density that is flat to within 0.1% (0.0043 db) in the frequency range of from 1 KHz to 100 KHz which brackets typical passbands of the signal-processing channels of JNPT's. Two embodiments, one of higher accuracy that is suitable for use as a standards instrument and another that is particularly adapted for ambient temperature operation, are illustrated in this application.

  20. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    Energy Technology Data Exchange (ETDEWEB)

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V. [Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  1. Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si

    Directory of Open Access Journals (Sweden)

    Edwin Soh

    2015-03-01

    Full Text Available Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF, foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

  2. Low- and high-index sol-gel films for planar and channel-doped waveguides

    Science.gov (United States)

    Canva, Michael; Chaput, Frederic; Lahlil, Khalid; Rachet, Vincent; Goudket, Helene; Boilot, Jean-Pierre; Levy, Yves

    2001-11-01

    In view of realizing integrated optic components based on effects such as electro-optic, chi(2):chi(2) cascading, stimulated emission,... one has to first synthesize materials with the proper functionality; this may be achieved by doping solid state matrices by the appropriate organic chromophores. Second, and as important, these materials have to be properly structured into the final optical guiding structures. We shall report on issues related to the realization of chromophore-doped planar waveguides as well as channel waveguides. These structures were realized by either photo-transformation such as photo- chromism and photo-bleaching or reactive ion etching technique, starting with chromophore doped sol-gel materials at high loading contents for which optical index may be controlled via the local dopant concentration. With these materials and techniques, waveguides and components characterized by propagation losses of the order of a cm-1, measured off the edge of the absorption band of the doping species, were fabricated. In order to be also able to study and use waveguide functionalized with low concentration of chromophore species, we developed new sol-gel materials of high optical index, yet low temperature processed. These new films are under study to evaluate their potential as host for organic doped waveguides devices.

  3. Effect of high pressure on the ground state of low doped manganite: a neutron diffraction and transport property study

    International Nuclear Information System (INIS)

    Ghosh, Barnali; Raychaudhuri, A.K.; Siruguri, V.; Chatterji, Tapan; Thomas, Hansen; Mukovskii, Ya.M.

    2013-01-01

    Depending on the doping level x the hole-doped perovskite manganites, like La 1-x Ca x MnO 3 exhibit a wide variety of physical properties. These compounds lead their high sensitivity to thermodynamic variables like temperature, magnetic field and pressure. The structure can be modified by application of high pressure and it can be quantitative that changes the Mn-O bond length and increases the Mn-O-Mn bond angle. In some cases the pressure can bring about qualitative changes in the structure like change in the lattice structure or its symmetry. These structural factors can contribute to the effective electron transfer integral between Mn ions, which in turn can change the magnetic exchanges like the double-exchange as well as the super exchange. For low hole doping (0.15 ≤ x ≤ 0.2), the low temperature ground state is Ferromagnetic insulator (FMI). The ground state of the low doped manganite La 0.79 Ca 0.21 MnO 3 (LCMO) can be destabilized by external hydrostatic pressure. We have done electrical transport measurement under magnetic field and under high pressure for understanding the nature of the resulting phase(s) that arise from the applied hydrostatic pressure. We find that the metallic phase so created under pressure has no appreciable magnetoresistance (MR). The Neutron powder diffraction measurement done on D20 diffractometer (λ=1.3Å) at ILL, Grenoble, France under high hydrostatic pressure up to 10GPa shows that the pressure leads to a change in the crystal structure from orthorhombic to rhombohedral and leading to a change in magnetic structure also; and most importantly collapse of the magnetic moment to a low value that leads to absence of any MR under pressure induced metallization. (author)

  4. High power density cell using nanostructured Sr-doped SmCoO3 and Sm-doped CeO2 composite powder synthesized by spray pyrolysis

    Science.gov (United States)

    Shimada, Hiroyuki; Yamaguchi, Toshiaki; Suzuki, Toshio; Sumi, Hirofumi; Hamamoto, Koichi; Fujishiro, Yoshinobu

    2016-01-01

    High power density solid oxide electrochemical cells were developed using nanostructure-controlled composite powder consisting of Sr-doped SmCoO3 (SSC) and Sm-doped CeO2 (SDC) for electrode material. The SSC-SDC nano-composite powder, which was synthesized by spray pyrolysis, had a narrow particle size distribution (D10, D50, and D90 of 0.59, 0.71, and 0.94 μm, respectively), and individual particles were spherical, composing of nano-size SSC and SDC fragments (approximately 10-15 nm). The application of the powder to a cathode for an anode-supported solid oxide fuel cell (SOFC) realized extremely fine cathode microstructure and excellent cell performance. The anode-supported SOFC with the SSC-SDC cathode achieved maximum power density of 3.65, 2.44, 1.43, and 0.76 W cm-2 at 800, 750, 700, and 650 °C, respectively, using humidified H2 as fuel and air as oxidant. This result could be explained by the extended electrochemically active region in the cathode induced by controlling the structure of the starting powder at the nano-order level.

  5. A doped activated carbon prepared from polyaniline for high performance supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Limin; Liu, Enhui; Li, Jian; Yang, Yanjing; Shen, Haijie; Huang, Zhengzheng; Xiang, Xiaoxia; Li, Wen [Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Hunan 411105 (China)

    2010-03-01

    A novel doped activated carbon has been prepared from H{sub 2}SO{sub 4}-doped polyaniline which is prepared by the oxypolymerization of aniline. The morphology, surface chemical composition and surface area of the carbon have been investigated by scanning electron microscope, X-ray photoelectron spectroscopy and Brunaner-Emmett-Teller measurement, respectively. Electrochemical properties of the doped activated carbon have been studied by cyclic voltammograms, galvanostatic charge/discharge, and electrochemical impedance spectroscopy measurements in 6 mol l{sup -1} KOH. The specific capacitance of the carbon is as high as 235 F g{sup -1}, the specific capacitance hardly decreases at a high current density 11 A g{sup -1} after 10,000 cycles, which indicates that the carbon possesses excellent cycle durability and may be a promising candidate for supercapacitors. (author)

  6. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    Science.gov (United States)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  7. Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martinez, A.; Lara-Velazquez, I.; Balderas-Navarro, R.E.; Ortega-Gallegos, J.; Guel-Sandoval, S.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi, SLP 78000 (Mexico)

    2008-07-01

    We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs(001). Measurements were performed at temperatures of 580 C and 430 C, in both n and p-type doped films and for both (2 x 4) and c(4 x 4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 10{sup 16}-10{sup 19} cm{sup -3}. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Optimizing High Level Waste Disposal

    International Nuclear Information System (INIS)

    Dirk Gombert

    2005-01-01

    If society is ever to reap the potential benefits of nuclear energy, technologists must close the fuel-cycle completely. A closed cycle equates to a continued supply of fuel and safe reactors, but also reliable and comprehensive closure of waste issues. High level waste (HLW) disposal in borosilicate glass (BSG) is based on 1970s era evaluations. This host matrix is very adaptable to sequestering a wide variety of radionuclides found in raffinates from spent fuel reprocessing. However, it is now known that the current system is far from optimal for disposal of the diverse HLW streams, and proven alternatives are available to reduce costs by billions of dollars. The basis for HLW disposal should be reassessed to consider extensive waste form and process technology research and development efforts, which have been conducted by the United States Department of Energy (USDOE), international agencies and the private sector. Matching the waste form to the waste chemistry and using currently available technology could increase the waste content in waste forms to 50% or more and double processing rates. Optimization of the HLW disposal system would accelerate HLW disposition and increase repository capacity. This does not necessarily require developing new waste forms, the emphasis should be on qualifying existing matrices to demonstrate protection equal to or better than the baseline glass performance. Also, this proposed effort does not necessarily require developing new technology concepts. The emphasis is on demonstrating existing technology that is clearly better (reliability, productivity, cost) than current technology, and justifying its use in future facilities or retrofitted facilities. Higher waste processing and disposal efficiency can be realized by performing the engineering analyses and trade-studies necessary to select the most efficient methods for processing the full spectrum of wastes across the nuclear complex. This paper will describe technologies being

  9. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  10. One-Step Synthesis of Microporous Carbon Monoliths Derived from Biomass with High Nitrogen Doping Content for Highly Selective CO2 Capture

    OpenAIRE

    Geng, Zhen; Xiao, Qiangfeng; Lv, Hong; Li, Bing; Wu, Haobin; Lu, Yunfeng; Zhang, Cunman

    2016-01-01

    The one-step synthesis method of nitrogen doped microporous carbon monoliths derived from biomass with high-efficiency is developed using a novel ammonia (NH3)-assisted activation process, where NH3 serves as both activating agent and nitrogen source. Both pore forming and nitrogen doping simultaneously proceed during the process, obviously superior to conventional chemical activation. The as-prepared nitrogen-doped active carbons exhibit rich micropores with high surface area and high nitrog...

  11. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  12. 1018 nm Yb-doped high-power fiber laser pumped by broadband pump sources around 915 nm with output power above 100 W

    DEFF Research Database (Denmark)

    Midilli, Yakup; Efunbajo, Oyewole Benjamin; Şimşek, Bartu

    2017-01-01

    laser were also addressed in this study. Finally, we have tested this system for high power experimentation and obtained 67% maximum optical-to-optical efficiency at an approximately 110 W output power level. To the best of our knowledge, this is the first 1018 nm ytterbium-doped all-fiber laser pumped...

  13. High-energy master oscillator power amplifier with near-diffraction-limited output based on ytterbium-doped PCF fiber

    Science.gov (United States)

    Li, Rao; Qiao, Zhi; Wang, Xiaochao; Fan, Wei; Lin, Zunqi

    2017-10-01

    With the development of fiber technologies, fiber lasers are able to deliver very high power beams and high energy pulses which can be used not only in scientific researches but industrial fields (laser marking, welding,…). The key of high power fiber laser is fiber amplifier. In this paper, we present a two-level master-oscillator power amplifier system at 1053 nm based on Yb-doped photonic crystal fibers. The system is used in the front-end of high power laser facility for the amplification of nano-second pulses to meet the high-level requirements. Thanks to the high gain of the system which is over 50 dB, the pulse of more than 0.89 mJ energy with the nearly diffraction-limited beam quality has been obtained.

  14. Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori [Laser Research Center, Institute for Molecular Science, Okazaki, Aichi (Japan); Ikesue, Akio [Japan Fine Ceramics Center, Nagoya, Aichi (Japan); Yoshida, Kunio [Institute of Laser Engineering, Osaka Institute of Technology, Osaka (Japan)

    2000-03-01

    Diode-pumped microchip laser oscillation of highly Nd{sup 3+}-doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

  15. Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

    International Nuclear Information System (INIS)

    Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori; Ikesue, Akio; Yoshida, Kunio

    2000-01-01

    Diode-pumped microchip laser oscillation of highly Nd 3+ -doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

  16. Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

    KAUST Repository

    Benali Kanoun, Mohammed

    2012-05-29

    We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

  17. A fundamental self-generated quenching center for lanthanide-doped high-purity solids

    International Nuclear Information System (INIS)

    Auzel, F.

    2002-01-01

    An intrinsic self-generated quenching center for lanthanide-doped high-purity solids is presented for transitions, which cannot be quenched by cross-relaxation. This center, in fact a cluster-like pair of active centers, is shown to come from a particular multiphonon-assisted energy transfer between them. Being due to the vibronic properties of the host it cannot be suppressed. Its role in lanthanide first excited states self-quenching is analyzed and a simple mathematical expression is derived. This law is compared with experimental results for self-quenching in Er-doped fluorophosphate glasses

  18. Transverse mode instability in high-power ytterbium doped fiber ampliers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann

    The last couple of decades have brought an impressive growth in the output power of rare-earth doped fiber lasers and amplifiers, reaching the kW average power regime in both CW and pulsed systems. As a result, even though fiber lasers have excellent heat dissipation properties, thermal effects due...... is to provide a theoretical understanding of the thermo-optical effects in high-power ytterbium doped fiber amplifiers, with a particular emphasis on understanding the aforementioned mode instability issue. Two main approaches to the problem have been used. The first is the development of a numerical model...

  19. Doping of GaN{sub 1-x}As{sub x} with high As content

    Energy Technology Data Exchange (ETDEWEB)

    Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

    2011-09-22

    Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

  20. Enhanced thermoelectric property of oxygen deficient nickel doped SnO2 for high temperature application

    Science.gov (United States)

    Paulson, Anju; Sabeer, N. A. Muhammad; Pradyumnan, P. P.

    2018-04-01

    Motivated by the detailed investigation on the thermoelectric performance of oxide materials our work concentrated on the influence of acceptor dopants and defect density in the lattice plane for the enhancement of thermoelectric power. The series of Sn1‑x Nix O2 (0.01 ≤ x ≤ 0.05) compositions were prepared by solid state reaction mechanism and found that 3 atomic percentage Ni doped SnO2 can be considered as a good candidate due to its promising electrical and transport properties. Defect lattices were introduced in the sample and the deviation from oxygen stochiometry was ensured using photoluminescence measurement. High power factor was obtained for the 3 atomic percentage nickel doped SnO2 due to the effective number of charge carrier concentration and the depletion of oxygen rich layers. Defect centered and acceptor doped SnO2 lattice opens a new door for energy harvesting at higher temperatures.

  1. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  2. Doping Lanthanide into Perovskite Nanocrystals: Highly Improved and Expanded Optical Properties.

    Science.gov (United States)

    Pan, Gencai; Bai, Xue; Yang, Dongwen; Chen, Xu; Jing, Pengtao; Qu, Songnan; Zhang, Lijun; Zhou, Donglei; Zhu, Jinyang; Xu, Wen; Dong, Biao; Song, Hongwei

    2017-12-13

    Cesium lead halide (CsPbX 3 ) perovskite nanocrystals (NCs) have demonstrated extremely excellent optical properties and great application potentials in various optoelectronic devices. However, because of the anion exchange, it is difficult to achieve white-light and multicolor emission for practical applications. Herein, we present the successful doping of various lanthanide ions (Ce 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Er 3+ , and Yb 3+ ) into the lattices of CsPbCl 3 perovskite NCs through a modified hot-injection method. For the lanthanide ions doped perovskite NCs, high photoluminescence quantum yield (QY) and stable and widely tunable multicolor emissions spanning from visible to near-infrared (NIR) regions are successfully obtained. This work indicates that the doped perovskite NCs will inherit most of the unique optical properties of lanthanide ions and deliver them to the perovskite NC host, thus endowing the family of perovskite materials with excellent optical, electric, or magnetic properties.

  3. High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

    2018-05-08

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  4. kW-level commercial Yb-doped aluminophosphosilicate ternary laser fiber

    Science.gov (United States)

    Sun, Shihao; Zhan, Huan; Li, Yuwei; Liu, Shuang; Jiang, Jiali; Peng, Kun; Wang, Yuying; Ni, Li; Wang, Xiaolong; Jiang, Lei; Yu, Juan; Liu, Gang; Lu, Pengfei; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

    2018-03-01

    Based on a master oscillator power amplifier configuration, laser performance of commercial Nufern-20/400-8M Ybdoped aluminophosphosilicate ternary laser fiber was investigated. Pumped by 976 nm laser diodes, 982 W laser output power was obtained with a slope efficiency of 84.9%. Spectrum of output was centered at 1066.56nm with 3dB bandwidth less than 0.32 nm, and the nonlinearity suppression ratio was more than 39dB. Beam quality of Mx2 and M2y were 1.55 and 1.75 at 982 W, respectively. The laser performance indicated that Nufern-20/400-8M Yb-doped aluminophosphosilicate ternary laser fiber is highly competitive for industry fiber laser use.

  5. Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

    Science.gov (United States)

    Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2018-04-24

    Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

  6. High-power Yb-doped continuous-wave and pulsed fibre lasers

    Indian Academy of Sciences (India)

    2014-01-05

    Jan 5, 2014 ... In this article, a review of Yb-doped CW and pulsed fibre lasers along with our study on self-pulsing dynamics in CW fibre lasers to find its role in high-power fibre laser development and the physical ... Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India ...

  7. Nitrogen-doped porous carbon derived from biomass waste for high-performance supercapacitor.

    Science.gov (United States)

    Ma, Guofu; Yang, Qian; Sun, Kanjun; Peng, Hui; Ran, Feitian; Zhao, Xiaolong; Lei, Ziqiang

    2015-12-01

    High capacitance property and low cost are the pivotal requirements for practical application of supercapacitor. In this paper, a low cost and high capacitance property nitrogen-doped porous carbon with high specific capacitance is prepared. The as-prepared nitrogen-doped porous carbon employing potato waste residue (PWR) as the carbon source, zinc chloride (ZnCl2) as the activating agent and melamine as nitrogen doping agent. The morphology and structure of the carbon materials are studied by scanning electron microscopy (SEM), N2 adsorption/desorption, X-ray diffraction (XRD) and Raman spectra. The surface area of the nitrogen-doped carbon which prepared under 700°C is found to be 1052m(2)/g, and the specific capacitance as high as 255Fg(-1) in 2M KOH electrolyte is obtained utilize the carbon as electrode materials. The electrode materials also show excellent cyclability with 93.7% coulombic efficiency at 5Ag(-1) current density of for 5000cycles. Copyright © 2015 Elsevier Ltd. All rights reserved.

  8. Instability of supercritical porosity in highly doped ceria under reduced oxygen partial pressure

    DEFF Research Database (Denmark)

    Teocoli, Francesca; Ni, De Wei; Esposito, Vincenzo

    2015-01-01

    The thermomechanical behavior and microstructural evolution of low relative density (∼0.40) gadolinium-doped ceria are characterized under oxidative and reducing conditions at high temperatures. The electronic defects generated in the structure by Ce4+ to Ce3+ reduction play an important role on ...

  9. Phosphoric acid doped imidazolium polysulfone membranes for high temperature proton exchange membrane fuel cells

    DEFF Research Database (Denmark)

    Yang, Jingshuai; Li, Qingfeng; Jensen, Jens Oluf

    2012-01-01

    A novel acid–base polymer membrane is prepared by doping of imidazolium polysulfone with phosphoric acid for high temperature proton exchange membrane fuel cells. Polysulfone is first chloromethylated, followed by functionalization of the chloromethylated polysulfone with alkyl imidazoles i.e. me...

  10. Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

    2011-01-01

    We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

  11. Phosphoric acid doped AB-PBI membranes and its applications in high temperature PEMFC

    DEFF Research Database (Denmark)

    He, Ronghuan; Qingfeng, Li; Bjerrum, Niels

    2005-01-01

    Poly(2,5-benzimidazole) (ab-PBI) was prepared from 3,4-diaminobenzoic acid via a polymerisation reaction. The obtained polymer exhibits excellent thermal stability in a temperature range ….. The membrane of ab-PBI when doped with phosphoric acid at room temperaturepresents high proton conductivity...

  12. Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

    International Nuclear Information System (INIS)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

    1997-01-01

    The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

  13. Dynamical spin susceptibility of electron-doped high-Tc cuprates. Comparison with hole-doped systems

    International Nuclear Information System (INIS)

    Suzuki, Atsuo; Mutou, Tetsuya; Tanaka, Syunsuke; Hirashima, Dai S.

    2010-01-01

    The magnetic excitation spectrum of electron-doped copper oxide superconductors is studied by calculating the dynamical spin susceptibility of the two-dimensional Hubbard model in which a d x2-y2 -wave superconducting order parameter is assumed. The spectrum of electron-doped systems is compared with that of hole-doped systems, and the relationship between the frequency at which a peak grows in the spectrum and the superconducting energy gap at a hot spot is investigated. A peak may be observed even when the magnetic resonance condition is not exactly satisfied. We find that, in the electron-doped systems, the resonance condition is less likely to be satisfied than in the hole-doped systems because of the small density of states around the hot spots, and the peak frequency is close to twice the gap magnitude at the hot spots. (author)

  14. Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

    Institute of Scientific and Technical Information of China (English)

    Zhouhui Xia; Pengfei Li; Yuqiang Liu; Tao Song; Qiaoliang Bao; Shuit-Tong Lee; Baoquan Sun

    2017-01-01

    In conventional crystalline silicon (Si) homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes.However,this technique involves an energy intensive,high temperature (~ 800 ℃) process and toxic doping materials.Black phosphorus (BP) is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties.Here,we place BP:zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact.Once the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge injection.This photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor heterojunctions.We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2% is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer.These findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

  15. Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

    Science.gov (United States)

    Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

    2017-09-01

    Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

  16. Highly nitrogen-doped carbon capsules: scalable preparation and high-performance applications in fuel cells and lithium ion batteries.

    Science.gov (United States)

    Hu, Chuangang; Xiao, Ying; Zhao, Yang; Chen, Nan; Zhang, Zhipan; Cao, Minhua; Qu, Liangti

    2013-04-07

    Highly nitrogen-doped carbon capsules (hN-CCs) have been successfully prepared by using inexpensive melamine and glyoxal as precursors via solvothermal reaction and carbonization. With a great promise for large scale production, the hN-CCs, having large surface area and high-level nitrogen content (N/C atomic ration of ca. 13%), possess superior crossover resistance, selective activity and catalytic stability towards oxygen reduction reaction for fuel cells in alkaline medium. As a new anode material in lithium-ion battery, hN-CCs also exhibit excellent cycle performance and high rate capacity with a reversible capacity of as high as 1046 mA h g(-1) at a current density of 50 mA g(-1) after 50 cycles. These features make the hN-CCs developed in this study promising as suitable substitutes for the expensive noble metal catalysts in the next generation alkaline fuel cells, and as advanced electrode materials in lithium-ion batteries.

  17. Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-T{sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory and Stanford University, Stanford, CA 94305 (United States); Schmitt, F; Meevasana, W; Motoyama, E M [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States); Lu, D H [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Kim, C [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Scalettar, R T [Physics Department, University of California-Davis, Davis, CA 95616 (United States)], E-mail: moritzb@slac.stanford.edu

    2009-09-15

    Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

  18. Morphology and Doping Level of Electropolymerized Biselenophene-Flanked 3,4- Ethylenedioxythiophene Polymer: Effect of Solvents and Electrolytes

    International Nuclear Information System (INIS)

    Agrawal, Vikash; Shahjad; Bhardwaj, Dinesh; Bhargav, Ranoo; Sharma, Gauri Datt; Bhardwaj, Ramil Kumar; Patra, Asit; Chand, Suresh

    2016-01-01

    Highlights: • Biselenophene-flanked 3,4-ethylenedioxythiophene polymer films were obtained by electrochemical polymerization. • Supporting electrolyte has significant effect on the doping level, whereas electropolymerized solvent has a major effect on morphology of the polymer films. • Optoelectronic properties and morphology of the electropolymerized films were studied. • Density functional theory (DFT) calculation has been made for optoelectronic properties. - Abstract: Biselenophene-flanked 3,4-ethylenedioxythiophene (EDOT) based polymer films were obtained by electrochemical polymerization. The effects of polymerization conditions such as supporting electrolytes and solvents on doping level, optical property and morphology of the polymer films were systematically studied. Interestingly, we found that polymer prepared by using different supporting electrolytes (TBAPF 6 , TBABF 4 and TBAClO 4 ) has significant effects on the doping level of the polymer films, whereas electropolymerized solvents (acetonitrile and dichloromethane) has no such effects on doping level. The polymer films show reversible dedoping and doping behavior upon treatment with hydrazine hydrate and iodine respectively. Biselenophene-flanked EDOT polymer shows a band gap of about 1.6 eV which is comparable to poly(3,4- ethylenedioxythiophene) (PEDOT) and parent polyselenophene, whereas fine-tuning of HOMO and LUMO energy levels has been found. In contrast, we observed that electropolymerized solvent has a major effect on morphology of the polymer films, while supporting electrolyte has very minor effects on the morphology. The surface morphologies of the polymer films were characterized by scanning electron microscope (SEM) and atomic force microscope (AFM) techniques. We also present an efficient synthesis of bisthiophene-flanked bridged EDOT (ETTE), and biselenophene-flanked bridged EDOT (ESeSeE), and their electrochemical polymerization, characterizations and throughout comparison

  19. Synthesis and characterization of highly triboluminescent doped europium tetrakis compounds

    International Nuclear Information System (INIS)

    Fontenot, Ross S.; Hollerman, William A.; Bhat, Kamala N.; Aggarwal, Mohan D.

    2012-01-01

    One of the most intriguing properties involving crystals is their ability to emit light when fractured. While this property was discovered over 200 years ago, no one has ever been able to come up with a complete theory that can predict the physical principles associated with triboluminescence. However, this has not stopped scientists from coming up with various uses for these materials. One such application is to use these materials as the active element for smart impact sensors that can warn of catastrophic impacts. If these sensors are to become a reality however, the material must emit a bright light when fractured. One of the brightest triboluminescent materials found thus far is europium dibenzoylmethide triethylammonium (EuD 4 TEA). This material was discovered by Hurt in 1966 and is bright enough to be seen in daylight. In 2011, the authors discovered that synthesizing EuD 4 TEA using europium nitrate instead of chloride significantly increased the triboluminescence yield and made the synthesis much easier and more consistent. However, to date, there are few investigations into the effects of dopants on the triboluminescence of EuD 4 TEA. This paper reports the investigation of the effects of various dopants on: (1) The triboluminescent light yield, (2) Crystal size and structure, (3) Synthesis time, and (4) Prompt decay time. Results show that inclusion of dopants during synthesis increases the triboluminescence emission of EuD 4 TEA by 55%, significantly reduces the synthesis time, and controls the decay time. All of these properties can be useful for constructing the first prototype of a customized impact sensor. - Highlights: ► Doped europium dibenzoylmethide triethylammonium (EuD 4 TEA) was synthesized. ► Effects of dopants was studied from EuD 4 TEA during low velocity (<10 m/s) impacts. ► The triboluminescent light yield, decay time, and synthesis time were measured. ► A specially-built drop tower was developed to measure triboluminescence

  20. High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

    Science.gov (United States)

    Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

    2018-06-01

    We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

  1. High-efficiency 2 μm Tm-doped fiber laser

    International Nuclear Information System (INIS)

    Dvornikov, D.

    2013-01-01

    Full text: Tm doped fiber laser operating in so called 'eye safe' wavelength region and designed in a MOPA configuration has been demonstrated. Large-mode-area fiber design and availability of high-brightness, high-power pump diodes at 795 nm made possible maximum output power of 25 W achieved at incident pump power of 72 W resulting in optical conversion efficiency about 35%. An important factor that led to an interest in 2 μm Tm-doped lasers is significantly broader spectral tunability of Tm-doped fibers compared to Yb-doped fibers, spanning wavelengths from below 1850 nm to beyond 2100 nm, corresponding to more than 200 nm of available bandwidth. This wavelength region covers the water absorption peaks around 1940 nm, making these lasers a valuable tool for precise medical procedures including noninvasive surgery, as well as several atmospheric transmission windows that are useful for remote sensing, laser radar and range-finding. This work was carried out as part of the EU funded Joint Operational Programme 'Black Sea Basin 2007-2013' and project 2.2.1.74459.339, MIS-ETC 1443 'Research networking for the environmental monitoring and mitigation of adverse ecological effects in the Black Sea Basin (BSB Net-Eco)'.

  2. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  3. Yb-doped aluminophosphosilicate ternary fiber with high efficiency and excellent laser stability

    Science.gov (United States)

    Li, Yuwei; Peng, Kun; Zhan, Huan; Liu, Shuang; Ni, Li; Wang, Yuying; Yu, Juan; Wang, Xiaolong; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

    2018-03-01

    By using chelate precursor doping technique and traditional modified chemical vapor deposition system, we fabricated Yb-doped aluminophosphosilicate (Al2O3-P2O5-SiO2, ternary Yb-APS) large-mode-area fiber and reported on its laser performance. The fiber preform was doped with Al, P and Yb with concentration of ∼8000 ppm, ∼1700 ppm and ∼400 ppm in molar percent, respectively. Tested with master oscillator power amplifier system, the home-made Yb-APS fiber was found to present 1.02 kW at 1061.1 nm with a high slope efficiency of 81.2% and excellent laser stability with power fluctuation less than ±1.1% for over 10 h. Compared with Yb-doped aluminosilicate (Al2O3-SiO2, binary Yb-AS) fiber, the introduction of P2O5 effectively suppressed photodarkening effect even the P/Al ratio is much less than 1, indicating that Yb-APS fiber is a better candidate for high power fiber lasers.

  4. High capacity and high rate capability of nitrogen-doped porous hollow carbon spheres for capacitive deionization

    International Nuclear Information System (INIS)

    Zhao, Shanshan; Yan, Tingting; Wang, Hui; Chen, Guorong; Huang, Lei; Zhang, Jianping; Shi, Liyi; Zhang, Dengsong

    2016-01-01

    Graphical abstract: - Highlights: • The nitrogen-doped porous hollow carbon spheres were prepared. • The obtained materials have a good capacitive deionization performance. • The electrodes show high salt adsorption rate and good regeneration performance. - Abstract: In this work, nitrogen-doped porous hollow carbon spheres (N-PHCS) were well prepared by using polystyrene (PS) spheres as hard templates and dopamine hydrochloride as carbon and nitrogen sources. Field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images demonstrate that the N-PHCS have a uniform, spherical and hollow structure. Nitrogen adsorption–desorption analysis shows that the N-PHCS have a high specific area of 512 m 2 /g. X-ray photoelectron spectroscopy result reveals that the nitrogen doping amount is 2.92%. The hollow and porous structure and effective nitrogen doping can contribute to large accessible surface area, efficient ion transport and good conductivity. In the electrochemical tests, we can conclude that the N-PHCS have a high specific capacitance value, a good stability and low inner resistance. The N-PHCS electrodes present a high salt adsorption capacity of 12.95 mg/g at a cell voltage of 1.4 V with a flow rate of 40 mL/min in a 500 mg/L NaCl aqueous solution. Moreover, the N-PHCS electrodes show high salt adsorption rate and good regeneration performance in the CDI process. With high surface specific area and effective nitrogen doping, the N-PHCS is promising to the CDI and other electrochemical applications.

  5. High capacity and high rate capability of nitrogen-doped porous hollow carbon spheres for capacitive deionization

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shanshan; Yan, Tingting; Wang, Hui; Chen, Guorong; Huang, Lei; Zhang, Jianping; Shi, Liyi; Zhang, Dengsong, E-mail: dszhang@shu.edu.cn

    2016-04-30

    Graphical abstract: - Highlights: • The nitrogen-doped porous hollow carbon spheres were prepared. • The obtained materials have a good capacitive deionization performance. • The electrodes show high salt adsorption rate and good regeneration performance. - Abstract: In this work, nitrogen-doped porous hollow carbon spheres (N-PHCS) were well prepared by using polystyrene (PS) spheres as hard templates and dopamine hydrochloride as carbon and nitrogen sources. Field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images demonstrate that the N-PHCS have a uniform, spherical and hollow structure. Nitrogen adsorption–desorption analysis shows that the N-PHCS have a high specific area of 512 m{sup 2}/g. X-ray photoelectron spectroscopy result reveals that the nitrogen doping amount is 2.92%. The hollow and porous structure and effective nitrogen doping can contribute to large accessible surface area, efficient ion transport and good conductivity. In the electrochemical tests, we can conclude that the N-PHCS have a high specific capacitance value, a good stability and low inner resistance. The N-PHCS electrodes present a high salt adsorption capacity of 12.95 mg/g at a cell voltage of 1.4 V with a flow rate of 40 mL/min in a 500 mg/L NaCl aqueous solution. Moreover, the N-PHCS electrodes show high salt adsorption rate and good regeneration performance in the CDI process. With high surface specific area and effective nitrogen doping, the N-PHCS is promising to the CDI and other electrochemical applications.

  6. Improvement in mechanical properties of high concentration particle doped thermoset composites

    International Nuclear Information System (INIS)

    Ahmed, N.

    2009-01-01

    The paper relates to high concentration particle doped composites based on thermosetting polymer systems in which the sequential addition of particles of certain size distribution is followed by curing and casting of the slurry to form a thermoset composite. Conventionally, at a threshold of beyond 90% of particles by weight of the polymer using triglyceride, the mechanical properties of the composite exhibit a sharp decline. The present research mitigates this behavior by incorporating a unique combination of cross-linking agents in the base polymer to impart exceptional mechanical properties to the composite. More specifically, the base polymer consists of butadiene, with triglyceride as cross-linking agent together with hydroxy-alkane as the chain extension precursors, when tune to the appropriate level of hard segment ratio in the polymer. An added advantage according to the present work resides in the analytical nature of butadiene pre-polymer as opposed to natural product; traditional composites based on natural sources are hampered by their inconsistent chemical composition and poor shelf life in the fabricated composite. The thermoset composite according the present research exhibits superior tensile strength (200-300 psi) properties using particle loading as high as 92% by weight of the fabricated composite as measured on a Tinius Olsen machine. Dynamic Mechanical Testing reveals interesting combination of storage and loss moduli in the fabricated specimens as a function of optimizing the thermal response of the viscoelastic composite to imposed vibration loading. (author)

  7. Facile preparation of nitrogen-doped hierarchical porous carbon with high performance in supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Kun [State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); Kong, Ling-Bin, E-mail: konglb@lut.cn [State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China); Shen, Kui-Wen; Dai, Yan-Hua; Shi, Ming; Hu, Bing [State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China); Luo, Yong-Chun; Kang, Long [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China)

    2016-02-28

    Graphical abstract: Preparing and activating process of nitrogen-doped hierarchical porous carbon (NHPC). - Highlights: • The well-defined PAN-b-PMMA copolymer was synthesized by atom transfer radical polymerization with narrow molecular weight distribution. • Nitrogen-doped hierarchical porous structure (NHPC) was prepared through a simple carbonization procedure of PAN-b-PMMA precursor. • NHPC possessed hierarchical porous structure with high BET surface area of 257 m{sup 2} g{sup −1} and DFT mesopore size of 14.61 nm. • Effects of activation conditions on supercapacitive behavior were systematically studied. - Abstract: The nitrogen-doped hierarchical porous carbon (NHPC) material was successfully prepared through a simple carbonization procedure of well-defined diblock copolymer precursor containing nitrogen-enriched carbon source, i.e., polyacrylonitrile (PAN), and asacrificial block, i.e., polymethylmethacrylate (PMMA). PAN-b-PMMA diblock copolymer was synthesized by atom transfer radical polymeriation (ATRP) with narrow molecular weight distribution. The as-obtained NHPC possessed nitrogen-doped hierarchical porous structure with high BET surface area of 257 m{sup 2} g{sup −1} and Nonlocal density functional theory (NLDFT) mesopore size of 14.61 nm. Surface activated nitrogen-doped hierarchical porous carbon (A-NHPC) materials were obtained by subsequent surface activation with HNO{sub 3} solution. The effects of activation conditions on supercapacitive behavior were systematically studied, a maximum specific capacitance of 314 F g{sup −1} at a current density of 0.5 A g{sup −1} was achieved in 2 M KOH aqueous electrolyte. Simultaneously, it exhibited excellent rate capability of 67.8% capacitance retention as the current density increased from 0.5 to 20 A g{sup −1} and superior cycling performance of 90% capacitance retention after 10,000 cycles at the current density of 2 A g{sup −1}.

  8. Facile preparation of nitrogen-doped hierarchical porous carbon with high performance in supercapacitors

    International Nuclear Information System (INIS)

    Yan, Kun; Kong, Ling-Bin; Shen, Kui-Wen; Dai, Yan-Hua; Shi, Ming; Hu, Bing; Luo, Yong-Chun; Kang, Long

    2016-01-01

    Graphical abstract: Preparing and activating process of nitrogen-doped hierarchical porous carbon (NHPC). - Highlights: • The well-defined PAN-b-PMMA copolymer was synthesized by atom transfer radical polymerization with narrow molecular weight distribution. • Nitrogen-doped hierarchical porous structure (NHPC) was prepared through a simple carbonization procedure of PAN-b-PMMA precursor. • NHPC possessed hierarchical porous structure with high BET surface area of 257 m"2 g"−"1 and DFT mesopore size of 14.61 nm. • Effects of activation conditions on supercapacitive behavior were systematically studied. - Abstract: The nitrogen-doped hierarchical porous carbon (NHPC) material was successfully prepared through a simple carbonization procedure of well-defined diblock copolymer precursor containing nitrogen-enriched carbon source, i.e., polyacrylonitrile (PAN), and asacrificial block, i.e., polymethylmethacrylate (PMMA). PAN-b-PMMA diblock copolymer was synthesized by atom transfer radical polymeriation (ATRP) with narrow molecular weight distribution. The as-obtained NHPC possessed nitrogen-doped hierarchical porous structure with high BET surface area of 257 m"2 g"−"1 and Nonlocal density functional theory (NLDFT) mesopore size of 14.61 nm. Surface activated nitrogen-doped hierarchical porous carbon (A-NHPC) materials were obtained by subsequent surface activation with HNO_3 solution. The effects of activation conditions on supercapacitive behavior were systematically studied, a maximum specific capacitance of 314 F g"−"1 at a current density of 0.5 A g"−"1 was achieved in 2 M KOH aqueous electrolyte. Simultaneously, it exhibited excellent rate capability of 67.8% capacitance retention as the current density increased from 0.5 to 20 A g"−"1 and superior cycling performance of 90% capacitance retention after 10,000 cycles at the current density of 2 A g"−"1.

  9. LED and low level laser therapy association in tooth bleaching using a novel low concentration H2O2/N-doped TiO2 bleaching agent

    Science.gov (United States)

    Bezerra Dias, Hércules; Teixeira Carrera, Emanuelle; Freitas Bortolatto, Janaína; Ferrarezi de Andrade, Marcelo; Nara de Souza Rastelli, Alessandra

    2016-01-01

    Since low concentration bleaching agents containing N-doped TiO2 nanoparticles have been introduced as an alternative to conventional agents, it is important to verify their efficacy and the hypersensitivity effect in clinical practice. Six volunteer patients were evaluated for color change and hypersensitivity after bleaching using 35% H2O2 (one session of two 12 min applications) and 6% H2O2/N-doped TiO2 (one session of three 12 min applications) and after low level laser therapy application (LLLT) (780 nm, 40 mW, 10 J.cm-2, 10 s). Based on this case study, the nanobleaching agent provided better or similar aesthetic results than the conventional agent under high concentration, and its association with LLLT satisfactorily decreased the hypersensitivity. The 6% H2O2/N-doped TiO2 agent could be used instead of conventional in-office bleaching agents under high concentrations to fulfill the rising patient demand for aesthetics.

  10. Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

  11. Highly doped InP as a low loss plasmonic material for mid-IR region

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

    2016-01-01

    by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

  12. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  13. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  14. Doping in sport: Attitudes, beliefs and knowledge of competitive high ...

    African Journals Online (AJOL)

    South African TuksSport academy athletes at the High Performance Centre, University of Pretoria, and competitive high-school athletes at four private high schools in Gauteng completed the survey. A selfdetermined, structured questionnaire was used to establish the attitudes, beliefs and knowledge of the athletes. Results.

  15. Facile Synthesis of Highly Water-Soluble Lanthanide-Doped t-LaVO4 NPs for Antifake Ink and Latent Fingermark Detection

    KAUST Repository

    Chen, Cailing

    2017-11-08

    In the information age, it is important to protect the security and integrity of the information. As a result, the fluorescent ink as an antifake technology and the fingermark as an information carrier have aroused great interest. In this work, highly water-soluble lanthanide (Ln3+ )-doped tetragonal phase (t-) LaVO4 nanoparticles (NPs) are successfully obtained via a simple, fast, and green microwave-assisted hydrothermal method. The average size of t-LaVO4 NPs is about 43 nm. The aqueous solutions of Ln3+ -doped t-LaVO4 exhibit excellent fluorescence properties under ultraviolet light (UV) excitation (t-LaVO4 :10%Eu is bright red and t-LaVO4 :0.5%Dy is close to white). Some superb antifake fluorescent patterns are printed using Ln3+ -doped t-LaVO4 aqueous solution as ink, which indicates the as-prepared Ln3+ -doped t-LaVO4 NPs as fluorescent ink can meet the various antifake requirements. Notably, the designed convenient antifake fluorescent codes with improved security could be directly scanned and decoded by a smart phone. What\\'s more, the as-prepared NPs can be used for the development of latent fingermark on various substrates and the second-level detail information can be clearly obtained from the magnification of a fingermark. These results indicate that the as-prepared Ln3+ -doped t-LaVO4 fluorescent NPs have great potential in security application.

  16. Facile Synthesis of Highly Water-Soluble Lanthanide-Doped t-LaVO4 NPs for Antifake Ink and Latent Fingermark Detection

    KAUST Repository

    Chen, Cailing; Yu, Ying; Li, Chunguang; Liu, Dan; Huang, He; Liang, Chen; Lou, Yue; Han, Yu; Shi, Zhan; Feng, Shouhua

    2017-01-01

    In the information age, it is important to protect the security and integrity of the information. As a result, the fluorescent ink as an antifake technology and the fingermark as an information carrier have aroused great interest. In this work, highly water-soluble lanthanide (Ln3+ )-doped tetragonal phase (t-) LaVO4 nanoparticles (NPs) are successfully obtained via a simple, fast, and green microwave-assisted hydrothermal method. The average size of t-LaVO4 NPs is about 43 nm. The aqueous solutions of Ln3+ -doped t-LaVO4 exhibit excellent fluorescence properties under ultraviolet light (UV) excitation (t-LaVO4 :10%Eu is bright red and t-LaVO4 :0.5%Dy is close to white). Some superb antifake fluorescent patterns are printed using Ln3+ -doped t-LaVO4 aqueous solution as ink, which indicates the as-prepared Ln3+ -doped t-LaVO4 NPs as fluorescent ink can meet the various antifake requirements. Notably, the designed convenient antifake fluorescent codes with improved security could be directly scanned and decoded by a smart phone. What's more, the as-prepared NPs can be used for the development of latent fingermark on various substrates and the second-level detail information can be clearly obtained from the magnification of a fingermark. These results indicate that the as-prepared Ln3+ -doped t-LaVO4 fluorescent NPs have great potential in security application.

  17. Visible-light-induced photocatalysis of low-level methyl-tertiary butyl ether (MTBE) and trichloroethylene (TCE) using element-doped titanium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Wan-Kuen; Yang, Chang-Hee [Department of Environmental Engineering, Kyungpook National University, Sankeokdong, Bukgu, Daegu 702-701 (Korea)

    2010-04-15

    While the photocatalytic degradation of various volatile organic compounds in conjunction with UV light has been widely reported, visible-light-induced photocatalytic degradation of low-levels of the pollutants MTBE and TCE, which have been linked to potential adverse health effects, is rarely reported. The present study examined whether visible-light-activated S- or N-doped TiO{sub 2} photocatalytic technology can be used to control indoor concentrations of MTBE and TCE. This study consists of the characterization of the doped TiO{sub 2} powders, as well as an investigation of their photocatalytic activities. In regards to both powders, a shift of the absorbance spectrum towards the visible light region was observed. An activity test suggested that these photocatalysts exhibited reasonably high degradation efficiencies towards MTBE and TCE under visible light irradiation. The degradation efficiencies of MTBE and TCE by S- and N-doped photocatalysts exceeded 75 and 80%, respectively, at input concentrations (IC) of 0.1 ppm. Degradation efficiency was dependent on both IC and relative humidity. TCE could enhance the degradation efficiency of MTBE even under visible-light irradiation. The estimated mineralization efficiencies (MEs) were comparable to those of previous studies conducted with UV/TiO{sub 2} systems. Similar to the relative degradation efficiencies, the ME of TCE was higher in comparison to that of MTBE. The CO production measured during the photocatalytic processes represented a negligible addition to indoor CO levels. These results suggest that visible-light-activated S- and N-doped TiO{sub 2} photocatalysts may prove a useful tool in the effort to improve indoor air quality. (author)

  18. Highly effective catalytic peroxymonosulfate activation on N-doped mesoporous carbon for o-phenylphenol degradation.

    Science.gov (United States)

    Hou, Jifei; Yang, Shasha; Wan, Haiqin; Fu, Heyun; Qu, Xiaolei; Xu, Zhaoyi; Zheng, Shourong

    2018-04-01

    As a broad-spectrum preservative, toxic o-phenylphenol (OPP) was frequently detected in aquatic environments. In this study, N-doped mesoporous carbon was prepared by a hard template method using different nitrogen precursors and carbonization temperatures (i.e., 700, 850 and 1000 °C), and was used to activate peroxymonosulfate (PMS) for OPP degradation. For comparison, mesoporous carbon (CMK-3) was also prepared. Characterization results showed that the N-doped mesoporous carbon samples prepared under different conditions were perfect replica of their template. In comparison with ethylenediamine (EDA) and dicyandiamide (DCDA) as the precursors, N-doped mesoporous carbon prepared using EDA and carbon tetrachloride as the precursors displayed a higher catalytic activity for OPP degradation. Increasing carbonization temperature of N-doped mesoporous carbon led to decreased N content and increased graphitic N content at the expense of pyridinic and pyrrolic N. Electron paramagnetic resonance (EPR) analysis showed that PMS activation on N-doped mesoporous carbon resulted in highly active species and singlet oxygen, and catalytic PMS activation for OPP degradation followed a combined radical and nonradical reaction mechanism. Increasing PMS concentration enhanced OPP degradation, while OPP degradation rate was independent on initial OPP concentration. Furthermore, the dependency of OPP degradation on PMS concentration followed the Langmuir-Hinshelwood model, reflecting that the activation of adsorbed PMS was the rate controlling step. Based on the analysis by time-of-flight mass spectrometry, the degradation pathway of OPP was proposed. Copyright © 2018 Elsevier Ltd. All rights reserved.

  19. Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

    Science.gov (United States)

    Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

    The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

  20. Highly doped InP as a low loss plasmonic material for mid-IR region.

    Science.gov (United States)

    Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

    2016-12-12

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

  1. Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

    Science.gov (United States)

    Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

    2018-05-16

    In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

  2. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  3. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

    Science.gov (United States)

    Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

    2017-01-01

    GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

  4. The effects of carbon nano filaments (CNT and CNF) doping on high temperature superconductors Y-123

    International Nuclear Information System (INIS)

    Dadras, S.; Daadmehr, V.

    2007-01-01

    Full text: This paper is based on the effects of carbon nano filaments (carbon nano tubes and carbon nano fibers) doping on Y-123 studies. We synthesized Y-123 with different contents of CNT and CNF doping. The samples were prepared from powders of Y 2 O 3 , BaCO 3 and Cu O by the solid state reaction. After calcination in air, we mixed Y-123 powder with different percentage of carbon nano filaments weight, produced by the CVD method. For obtaining more homogenous mixing, we have suspended it in an organic solvent with an ultrasonic mixer to prevent agglomeration of CNT. The CNT-Y-123 powder was dried afterwards, and pressed as pellet samples, in about 1mm thick, 10mm diameter, and 1gr weight, and sintered in oxygen atmosphere. We tried to find the transport effects on CNT and CNF doping in 123 systems. The strong coupling between grains in CNT doped samples caused the flow of inter-granular currents. Therefore the presence of CNT in high temperature superconductor samples increases the critical current density. Among various carbon precursors, carbon nano tubes (CNT) are very interesting because of their nano meter diameter which may make them as effective pinning centers, compared to the ordinary carbon. The carbon nano tubes are functioning like columnar defects produced by heavy-ion irradiation. Nano phase particles or aggregates embodied in the superconductor matrix can pin the flux lines effectively and enhance the intra-grain transport critical current density in high applied magnetic fields. Nano phase size particles in the size range of about 5-10 nm can be used as flux pinning centers for low field applications. The effects of carbon and carbon dioxide in Y-123 were studied by several groups, but none of them argued the effects of carbon nano tubes doping on Y-123. Uno et al. found that Jc was related to the carbon concentration, but they showed that Tc value and other physical properties did not change. In carbon doped Y-123 samples, Tc decreases with

  5. N-Doped carbon spheres with hierarchical micropore-nanosheet networks for high performance supercapacitors.

    Science.gov (United States)

    Wang, Shoupei; Zhang, Jianan; Shang, Pei; Li, Yuanyuan; Chen, Zhimin; Xu, Qun

    2014-10-18

    N-doped carbon spheres with hierarchical micropore-nanosheet networks (HPSCSs) were facilely fabricated by a one-step carbonization and activation process of N containing polymer spheres by KOH. With the synergy effect of the multiple structures, HPSCSs exhibit a very high specific capacitance of 407.9 F g(-1) at 1 mV s(-1) (1.2 times higher than that of porous carbon spheres) and a robust cycling stability for supercapacitors.

  6. High-power Yb- and Tm-doped double tungstate channel waveguide lasers

    NARCIS (Netherlands)

    van Dalfsen, Koop; Geskus, D.; Ay, F.; Worhoff, Kerstin; Aravazhi, S.; Pollnau, Markus

    The potassium double tungstates KGd(WO4)2, KY(WO4)2, and KLu(WO4)2 are excellent candidates for solid-state lasers because of their high refractive index of ~2.0-2.1, the large transition cross-sections of rare-earth (RE3+) ions doped into these hosts, and a reasonably large thermal conductivity of

  7. Electron energy-loss spectroscopy on n-type doped high-temperature superconductors and related systems

    International Nuclear Information System (INIS)

    Alexander, M.

    1992-08-01

    Electron-enery loss spectroscopy measurements on n-type doped high temperature superconductors, their undoped parent compounds, Y-doped Bi 2 Sr 2 CaCu 2 O 8 and some rare earth oxides are presented. The undoped parent compounds Ln 2 CuO 4 (Ln = Pr, Nd, Sm) are charge transfer insulators with a charge transfer energy gap of 1.4 eV. The conduction band lies in the CuO 2 plane and has mainly Cu3d x 2 -y 2 character. O2p x,y states are slightly hybridized with this band. Upon partially substituting the trivalent Ln ions by tetravalent Ce or Th and monovalent F for the O ions, electron doping of the CuO 2 plane occurs with the electrons having mainly Cu3d character. A rigid band behaviour is proposed by several band structure calculations could be ruled out, as well as the occurence of so called 'mid-gap' states appearing inside the band gap between the valence and conduction bands. The position of the Fermi level was found to be at the bottom of the conduction bands. No measurable influence of the reduction process, necessary to obtain superconductivity, was detected in the unoccupied density of states. Characteristics shifts of the measured oxygen and copper edges were correlated with crossing the metal-insulator transition. These shifts are most probably caused by an improved screening capacity of the free charge carriers. A similar effect was also observed in Y-doped Bi 2 Sr 2 CaCu 2 O 8 . Thus, it was possible to show that the disappearance of the valence band hole states upon doping did not occur in a rigid-band-like manner. The low energy excitations in Nd 1.85 Ce 0.15 CuO 4-δ showed a plasmon like excitation at about 1 eV as well as a reduction and an energy shift of the charge transfer excitation. The dispersion of this plasmon excitation was determined. (orig.)

  8. High stability of polymer optical fiber with dye doped cladding for illumination systems

    Energy Technology Data Exchange (ETDEWEB)

    Jaramillo-Ochoa, L. [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico); Narro-García, R. [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico); Universidad Autónoma de Chihuahua, Facultad de Ingeniería, Circuito Universitario S/N, 31125 Chihuahua, Chih., México (Mexico); Ocampo, M.A. [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico); Quintero-Torres, R., E-mail: rquintero@fata.unam.mx [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico)

    2017-04-15

    In this work, the photodegradation of a polymer optical fiber with Rhodamine doped cladding as a function of illumination time and excitation intensity is presented. To show the effect of photodegradation on different bulk geometries and environments, the photodegradation from a dye doped preform and a PMMA thick film is also evaluated. The reversible and the irreversible degradation of the florescent material were quantified under an established excitation scheme. To this purpose, a four-level system to model the photodegradation rates and its relation with the population of the states is presented and it is used to justify a possible underlying mechanism. The obtained results suggest an increase of one order of magnitude in the stability (lifetime) of the polymer optical fiber with respect to the preform or the thick film geometry stability.

  9. Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics.

    Science.gov (United States)

    Sanders, Simon; Cabrero-Vilatela, Andrea; Kidambi, Piran R; Alexander-Webber, Jack A; Weijtens, Christ; Braeuninger-Weimer, Philipp; Aria, Adrianus I; Qasim, Malik M; Wilkinson, Timothy D; Robertson, John; Hofmann, Stephan; Meyer, Jens

    2015-08-14

    Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq(-1). Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.

  10. Study of absorption and IR-emission of Er3+, Dy3+, Tm3+ doped high-purity tellurite glasses

    Science.gov (United States)

    Motorin, S. E.; Dorofeev, V. V.; Galagan, B. I.; Sverchkov, S. E.; Koltashev, V. V.; Denker, B. I.

    2018-04-01

    A study of high-purity TeO2-ZnO based tellurite glasses doped with Er3+, Dy3+ or Tm3+ that could be used as laser media in the 2-3 μm spectral range is presented. The glasses are prepared by melting the oxides mixture inside a silica glass reactor in an atmosphere of purified oxygen. The low level of hydroxyl groups absorption allowed to measure correctly the luminescence decay characteristics of the dopants. The rare-earth ions absorption bands, the luminescence spectra and kinetic characteristics of emission from the levels 4I11/2, 4I13/2 of Er3+, 6H13/2 of Dy3+ and 3H4, 3H5, 3F4 of Tm3+ ions are investigated. The results confirm the high potential of tellurite glasses as an active media for bulk, planar waveguide and fiber lasers.

  11. High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

    Science.gov (United States)

    Jackson, Stuart D

    2009-08-01

    A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

  12. Stable high efficiency two-dimensional perovskite solar cells via cesium doping

    KAUST Repository

    Zhang, Xu

    2017-08-15

    Two-dimensional (2D) organic-inorganic perovskites have recently emerged as one of the most important thin-film solar cell materials owing to their excellent environmental stability. The remaining major pitfall is their relatively poor photovoltaic performance in contrast to 3D perovskites. In this work we demonstrate cesium cation (Cs) doped 2D (BA)(MA)PbI perovskite solar cells giving a power conversion efficiency (PCE) as high as 13.7%, the highest among the reported 2D devices, with excellent humidity resistance. The enhanced efficiency from 12.3% (without Cs) to 13.7% (with 5% Cs) is attributed to perfectly controlled crystal orientation, an increased grain size of the 2D planes, superior surface quality, reduced trap-state density, enhanced charge-carrier mobility and charge-transfer kinetics. Surprisingly, it is found that the Cs doping yields superior stability for the 2D perovskite solar cells when subjected to a high humidity environment without encapsulation. The device doped using 5% Cs degrades only ca. 10% after 1400 hours of exposure in 30% relative humidity (RH), and exhibits significantly improved stability under heating and high moisture environments. Our results provide an important step toward air-stable and fully printable low dimensional perovskites as a next-generation renewable energy source.

  13. Properties and structure of high erbium doped phosphate glass for short optical fibers amplifiers

    International Nuclear Information System (INIS)

    Seneschal, Karine; Smektala, Frederic; Bureau, Bruno; Floch, Marie Le; Jiang Shibin; Luo, Tao; Lucas, Jacques; Peyghambarian, Nasser

    2005-01-01

    New phosphate glasses have been developed in order to incorporate high rare-earth ions concentrations. These glasses present a great chemical stability and a high optical quality. The phosphate glass network is open, very flexible, with a linkage of the tetrahedrons very disordered and contains a larger number of non-bridging oxygens (66%). The great stability and resistance against crystallization associated with the possibility to incorporate high doping concentration of rare-earth ions in these phosphate glasses make them very good candidates for the realization of ultra short single mode amplifiers with a high gain at 1.55 μm

  14. 3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance

    Science.gov (United States)

    Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

    2016-02-01

    A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g-1 is realized for the optimised case of binary doping over the entire range of 1 A g-1 to 40 A g-1 with stability of 500 cycles at 40 A g-1. Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system.

  15. 3D Polyaniline Architecture by Concurrent Inorganic and Organic Acid Doping for Superior and Robust High Rate Supercapacitor Performance.

    Science.gov (United States)

    Gawli, Yogesh; Banerjee, Abhik; Dhakras, Dipti; Deo, Meenal; Bulani, Dinesh; Wadgaonkar, Prakash; Shelke, Manjusha; Ogale, Satishchandra

    2016-02-12

    A good high rate supercapacitor performance requires a fine control of morphological (surface area and pore size distribution) and electrical properties of the electrode materials. Polyaniline (PANI) is an interesting material in supercapacitor context because it stores energy Faradaically. However in conventional inorganic (e.g. HCl) acid doping, the conductivity is high but the morphological features are undesirable. On the other hand, in weak organic acid (e.g. phytic acid) doping, interesting and desirable 3D connected morphological features are attained but the conductivity is poorer. Here the synergy of the positive quality factors of these two acid doping approaches is realized by concurrent and optimized strong-inorganic (HCl) and weak-organic (phytic) acid doping, resulting in a molecular composite material that renders impressive and robust supercapacitor performance. Thus, a nearly constant high specific capacitance of 350 F g(-1) is realized for the optimised case of binary doping over the entire range of 1 A g(-1) to 40 A g(-1) with stability of 500 cycles at 40 A g(-1). Frequency dependant conductivity measurements show that the optimized co-doped case is more metallic than separately doped materials. This transport property emanates from the unique 3D single molecular character of such system.

  16. Nitrogen-Doped Porous Carbons As Electrode Materials for High-Performance Supercapacitor and Dye-Sensitized Solar Cell.

    Science.gov (United States)

    Wang, Lan; Gao, Zhiyong; Chang, Jiuli; Liu, Xiao; Wu, Dapeng; Xu, Fang; Guo, Yuming; Jiang, Kai

    2015-09-16

    Activated N-doped porous carbons (a-NCs) were synthesized by pyrolysis and alkali activation of graphene incorporated melamine formaldehyde resin (MF). The moderate N doping levels, mesopores rich porous texture, and incorporation of graphene enable the applications of a-NCs in surface and conductivity dependent electrode materials for supercapacitor and dye-sensitized solar cell (DSSC). Under optimal activation temperature of 700 °C, the afforded sample, labeled as a-NC700, possesses a specific surface area of 1302 m2 g(-1), a N fraction of 4.5%, and a modest graphitization. When used as a supercapacitor electrode, a-NC700 offers a high specific capacitance of 296 F g(-1) at a current density of 1 A g(-1), an acceptable rate capability, and a high cycling stability in 1 M H2SO4 electrolyte. As a result, a-NC700 supercapacitor delivers energy densities of 5.0-3.5 Wh kg(-1) under power densities of 83-1609 W kg(-1). Moreover, a-NC700 also demonstrates high electrocatalytic activity for I3- reduction. When employed as a counter electrode (CE) of DSSC, a power conversion efficiency (PCE) of 6.9% is achieved, which is comparable to that of the Pt CE based counterpart (7.1%). The excellent capacitive and photovoltaic performances highlight the potential of a-NCs in sustainable energy devices.

  17. Coherent control of the group velocity in a dielectric slab doped with duplicated two-level atoms

    Science.gov (United States)

    Ziauddin; Chuang, You-Lin; Lee, Ray-Kuang; Qamar, Sajid

    2016-01-01

    Coherent control of reflected and transmitted pulses is investigated theoretically through a slab doped with atoms in a duplicated two-level configuration. When a strong control field and a relatively weak probe field are employed, coherent control of the group velocity is achieved via changing the phase shift ϕ between control and probe fields. Furthermore, the peak values in the delay time of the reflected and transmitted pulses are also studied by varying the phase shift ϕ.

  18. Nitrogen-doped graphene-wrapped iron nanofragments for high-performance oxygen reduction electrocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jang Yeol [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Kim, Na Young [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of); Shin, Dong Yun [Chungbuk National University, Department of Environmental Engineering (Korea, Republic of); Park, Hee-Young [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of); Lee, Sang-Soo [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Joon Kwon, S. [Korea Institute of Science and Technology, Nanophotonics Research Center (Korea, Republic of); Lim, Dong-Hee [Chungbuk National University, Department of Environmental Engineering (Korea, Republic of); Bong, Ki Wan [Korea University, Department of Chemical and Biological Engineering (Korea, Republic of); Son, Jeong Gon, E-mail: jgson@kist.re.kr [Korea Institute of Science and Technology, Photo-Electronic Hybrid Research Center (Korea, Republic of); Kim, Jin Young, E-mail: jinykim@kist.re.kr [Korea Institute of Science and Technology, Fuel Cell Research Center (Korea, Republic of)

    2017-03-15

    Transition metals, such as iron (Fe)- or cobalt (Co)-based nanomaterials, are promising electrocatalysts for oxygen reduction reactions (ORR) in fuel cells due to their high theoretical activity and low cost. However, a major challenge to using these metals in place of precious metal catalysts for ORR is their low efficiency and poor stability, thus new concepts and strategies should be needed to address this issue. Here, we report a hybrid aciniform nanostructures of Fe nanofragments embedded in thin nitrogen (N)-doped graphene (Fe@N-G) layers via a heat treatment of graphene oxide-wrapped iron oxide (Fe{sub 2}O{sub 3}) microparticles with melamine. The heat treatment leads to transformation of Fe{sub 2}O{sub 3} microparticles to nanosized zero-valent Fe fragments and formation of core-shell structures of Fe nanofragments and N-doped graphene layers. Thin N-doped graphene layers massively promote electron transfer from the encapsulated metals to the graphene surface, which efficiently optimizes the electronic structure of the graphene surface and thereby triggers ORR activity at the graphene surface. With the synergistic effect arising from the N-doped graphene and Fe nanoparticles with porous aciniform nanostructures, the Fe@N-G hybrid catalyst exhibits high catalytic activity, which was evidenced by high E{sub 1/2} of 0.82 V, onset potential of 0.93 V, and limiting current density of 4.8 mA cm{sup −2} indicating 4-electron ORR, and even exceeds the catalytic stability of the commercial Pt catalyst.

  19. Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

    International Nuclear Information System (INIS)

    Gessner, T.; Irmer, K.

    1983-01-01

    A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

  20. Suppressing segregation in highly phosphorus doped silicon monolayers

    NARCIS (Netherlands)

    Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

    2015-01-01

    Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

  1. Process Characterization of Electrical Discharge Machining of Highly Doped Silicon

    Science.gov (United States)

    2012-06-01

    of mechanism is shown in Figure 2 showing the wire feed panel where the spool of 5 (DiBitonto, et...Uno High efficiency boring of monocrystalline silicon ingot by EDM RAM Si (P-type) conductivity 0.01 ohm-cm 1mm Cu pipe electrode, rotating at

  2. Structural stability of the smectite-doped lanthanum under high pressures and high temperatures

    International Nuclear Information System (INIS)

    Stefani, Vicente Fiorini

    2012-01-01

    Smectites are phyllosilicates that have a tetrahedron: octahedron structure ratio of 2:1, with high cation exchange capacity (CEC) in the interlayers. For these and other features, smectites have been used in many parts of the world as secondary barriers with the goal of containing a possible leak of radioactive elements in final disposal facilities for radioactive waste through cation exchange. Our aim in this work is to reach the cation exchange in calcium montmorillonite (smectite dioctahedral) by lanthanum to simulate trivalent radionuclides and to study the stability of this structure under high pressure and high temperature. To achieve high pressure it was used two different technique: DAC (Diamond Anvil Cell), achieving pressures up to 12GPa at room temperature and hydraulic press with a toroidal chamber profile to achieve pressures up to 7,7GPa and temperatures up to 900 degree C. The heating is achieved simultaneously by an electric system coupled in the hydraulic press. The outcomes show that the smectite structure doped with lanthanum remains stable under 12GPa at room temperature and 2.5GPa at 200 degree C. However, above 300 degree C at 2.5GPa the structure becomes a new phase of muscovite-like, rich of La, where it loses its interlayer water and turns out to be irreversible. Furthermore, it is important to point out that the higher temperature the better ordered is the structure and it is still stable under 7.7GPa and 900 degree C. Moreover, after all experiments the structure continues being dioctahedral. The new phase of muscovite-like, rich of La, in contact with a calcium solution remains partially unchanged, whereas the other part returns to the original structure (montmorillonite-Ca). The following analyses were performed: X-ray diffraction (XRD) for evaluating the spatial structure; Fourier transform infrared spectroscopy (FTIR) for getting information about the vibrational modes; scanning electron microscopy with dispersive Xray spectroscopy

  3. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.com [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Senthamilselvi, V. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Department of Physics, Kunthavai Naachiyaar Government College for Women (Autonomous), Thanjavur-613 007, Tamil Nadu (India)

    2013-04-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  4. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    International Nuclear Information System (INIS)

    Ravichandran, K.; Senthamilselvi, V.

    2013-01-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  5. High-level language computer architecture

    CERN Document Server

    Chu, Yaohan

    1975-01-01

    High-Level Language Computer Architecture offers a tutorial on high-level language computer architecture, including von Neumann architecture and syntax-oriented architecture as well as direct and indirect execution architecture. Design concepts of Japanese-language data processing systems are discussed, along with the architecture of stack machines and the SYMBOL computer system. The conceptual design of a direct high-level language processor is also described.Comprised of seven chapters, this book first presents a classification of high-level language computer architecture according to the pr

  6. A high-performance mesoporous carbon supported nitrogen-doped carbon electrocatalyst for oxygen reduction reaction

    Science.gov (United States)

    Xu, Jingjing; Lu, Shiyao; Chen, Xu; Wang, Jianan; Zhang, Bo; Zhang, Xinyu; Xiao, Chunhui; Ding, Shujiang

    2017-12-01

    Investigating low-cost and highly active electrocatalysts for oxygen reduction reactions (ORR) is of crucial importance for energy conversion and storage devices. Herein, we design and prepare mesoporous carbon supported nitrogen-doped carbon by pyrolysis of polyaniline coated on CMK-3. This electrocatalyst exhibits excellent performance towards ORR in alkaline media. The optimized nitrogen-doped mesoporous electrocatalyst show an onset potential (E onset) of 0.95 V (versus reversible hydrogen electrode (RHE)) and half-wave potential (E 1/2) of 0.83 V (versus RHE) in 0.1 M KOH. Furthermore, the as-prepared catalyst presents superior durability and methanol tolerance compared to commercial Pt/C indicating its potential applications in fuel cells and metal-air batteries.

  7. Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

    Science.gov (United States)

    Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

    2018-02-15

    The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

  8. Lithium decoration of three dimensional boron-doped graphene frameworks for high-capacity hydrogen storage

    International Nuclear Information System (INIS)

    Wang, Yunhui; Meng, Zhaoshun; Liu, Yuzhen; You, Dongsen; Wu, Kai; Lv, Jinchao; Wang, Xuezheng; Deng, Kaiming; Lu, Ruifeng; Rao, Dewei

    2015-01-01

    Based on density functional theory and the first principles molecular dynamics simulations, a three-dimensional B-doped graphene-interconnected framework has been constructed that shows good thermal stability even after metal loading. The average binding energy of adsorbed Li atoms on the proposed material (2.64 eV) is considerably larger than the cohesive energy per atom of bulk Li metal (1.60 eV). This value is ideal for atomically dispersed Li doping in experiments. From grand canonical Monte Carlo simulations, high hydrogen storage capacities of 5.9 wt% and 52.6 g/L in the Li-decorated material are attained at 298 K and 100 bars

  9. High power operation of cladding pumped holmium-doped silica fibre lasers.

    Science.gov (United States)

    Hemming, Alexander; Bennetts, Shayne; Simakov, Nikita; Davidson, Alan; Haub, John; Carter, Adrian

    2013-02-25

    We report the highest power operation of a resonantly cladding-pumped, holmium-doped silica fibre laser. The cladding pumped all-glass fibre utilises a fluorine doped glass layer to provide low loss cladding guidance of the 1.95 µm pump radiation. The operation of both single mode and large-mode area fibre lasers was demonstrated, with up to 140 W of output power achieved. A slope efficiency of 59% versus launched pump power was demonstrated. The free running emission was measured to be 2.12-2.15 µm demonstrating the potential of this architecture to address the long wavelength operation of silica based fibre lasers with high efficiency.

  10. Nitrogen Doped Macroporous Carbon as Electrode Materials for High Capacity of Supercapacitor

    Directory of Open Access Journals (Sweden)

    Yudong Li

    2017-01-01

    Full Text Available Nitrogen doped carbon materials as electrodes of supercapacitors have attracted abundant attention. Herein, we demonstrated a method to synthesize N-doped macroporous carbon materials (NMC with continuous channels and large size pores carbonized from polyaniline using multiporous silica beads as sacrificial templates to act as electrode materials in supercapacitors. By the nice carbonized process, i.e., pre-carbonization at 400 °C and then pyrolysis at 700/800/900/1000 °C, NMC replicas with high BET specific surface areas exhibit excellent stability and recyclability as well as superb capacitance behavior (~413 F ⋅ g−1 in alkaline electrolyte. This research may provide a method to synthesize macroporous materials with continuous channels and hierarchical pores to enhance the infiltration and mass transfer not only used as electrode, but also as catalyst somewhere micro- or mesopores do not work well.

  11. High Methanol Oxidation Activity of Well-Dispersed Pt Nanoparticles on Carbon Nanotubes Using Nitrogen Doping

    Directory of Open Access Journals (Sweden)

    Fang Wei-Chuan

    2009-01-01

    Full Text Available Abstract Pt nanoparticles (NPs with the average size of 3.14 nm well dispersed on N-doped carbon nanotubes (CNTs without any pretreatment have been demonstrated. Structural properties show the characteristic N bonding within CNTs, which provide the good support for uniform distribution of Pt NPs. In electrochemical characteristics, N-doped CNTs covered with Pt NPs show superior current density due to the fact that the so-called N incorporation could give rise to the formation of preferential sites within CNTs accompanied by the low interfacial energy for immobilizing Pt NPs. Therefore, the substantially enhanced methanol oxidation activity performed by N-incorporation technique is highly promising in energy-generation applications.

  12. Structural transitions and multiferroic properties of high Ni-doped BiFeO3

    Science.gov (United States)

    Betancourt-Cantera, L. G.; Bolarín-Miró, A. M.; Cortés-Escobedo, C. A.; Hernández-Cruz, L. E.; Sánchez-De Jesús, F.

    2018-06-01

    Nickel doped bismuth ferrite powders, BiFe1-x NixO3 (0 ≤ x ≤ 0.5), were synthesized by high-energy ball milling followed by an annealing at 700 °C. A detailed study about the substitution of Fe3+ by Ni2+ on the crystal structure and multiferroic properties is presented. The X-ray diffraction patterns reveal the formation of rhombohedral structure with small amounts of Bi2Fe4O9 as a secondary phase for x behavior indicates the frustration of the G-antiferromagnetic order typical of the un-doped BiFeO3, caused by the presence of small amounts of Ni2+ (x Behavior modifications of electrical conductivity, permittivity and dielectric loss versus frequency are related with crystal structure transformations, when nickel concentration is increased.

  13. Nano silver diffusion behaviour on conductive polymer during doping process for high voltage application

    Science.gov (United States)

    Mohammad, A.; Mahmood, A.; Chin, K. T.; Danquah, M. K.; van Stratan, S.

    2017-06-01

    Conductive polymer had opened a new era of engineering for microelectronics and semiconductor applications. However, it is still a challenge for high voltage applications due to lower electrical conductivity compare to metals. This results tremendous energy losses during transmission and restricts its usage. In order to address such problem a novel method was investigated using nano silver particle doped iodothiophene since silver is the highest electrical conductive material. The experiments were carried out to study the organometallic diffusion behaviour of nanosilver doped iodothiophene with different concentration of iodothiophene. Five different mixing ratio between nanosilver and the solution of iodothiophene dissolved in diethyl ether were used which are 1:1.25, 1:1.5, 1:2.5, 1:3 and l:5. It was revealed that there is an effective threshold concentration of which the nano silver evenly distributed and there was no coagulation observed. These parameters laid the foundation of better doping process between the nano silver and the polymer significantly which would contribute developing conductive polymer towards high voltage application for industries that are vulnerable to corrosive environment.

  14. Studies of High-T$_{c}$ Superconductors Doped with Radioactive Isotopes

    CERN Multimedia

    Alves, E J; Goncalves marques, J; Cardoso, S; Lourenco, A A; Sousa, J B

    2002-01-01

    %title\\\\ \\\\We propose to study High T$_{c} $ Superconductors~(HTSc) doped with radioactive elements at ISOLDE, in order to investigate some of the problems that persist after use of conventional characterization techniques. Three main topics are proposed: \\begin{enumerate} \\item Characterization of the order/disorder of Hg in the Hg-planes of the HTSc family Hg$_{1}$Ba$_{2}$R$_{(n-1)}$Cu$_{n}$O$_{(2n+2+\\delta)}$ (T$_{c}$ > 130 K) due to defects or impurities such as C and Au. \\item Studies of the doping of Infinite Layers Cuprates (RCuO$_{2}$)$_{n}$, R=Ca, Sr or Ba, using unstable nuclei of the alkaline-earth (IIA) group which decay to the alkaline nuclei (IA) group. The purpose is to introduce charge carriers in these materials by changing the valence of the cations during the nuclear transmutation. The possibility of using ion implantation to introduce directly an alkaline dopant will also be studied. \\item Studies of the Hg/Au doping of high quality YBa$_{2}$Cu$_{3}$O$_{6+x}$ thin films. We intend to chara...

  15. Oxygen effects on the interfacial electronic structure of titanyl phthalocyanine film: p-Type doping, band bending and Fermi level alignment

    International Nuclear Information System (INIS)

    Nishi, Toshio; Kanai, Kaname; Ouchi, Yukio; Willis, Martin R.; Seki, Kazuhiko

    2006-01-01

    The effect of oxygen doping on titanyl phthalocyanine (TiOPc) film was investigated by ultraviolet photoelectron spectroscopy (UPS). The electronic structure of the interface formed between TiOPc films deposited on highly oriented pyrolytic graphite (HOPG) was clearly different between the films prepared in ultrahigh vacuum (UHV) and under O 2 atmosphere (1.3 x 10 -2 Pa). The film deposited in UHV showed downward band bending characteristic of n-type semiconductor, possibly due to residual impurities working as unintentional n-type dopants. On the other hand, the film deposited under O 2 atmosphere showed upward band bending characteristic of p-type semiconductor. Such trends, including the conversion from n- to p-type, are in excellent correspondence with reported field effect transistor characteristics of TiOPc, and clearly demonstrates that bulk TiOPc film was p-doped with oxygen. In order to examine the Fermi level alignment between TiOPc film and the substrate, the energy of the highest occupied molecular orbital (HOMO) of TiOPc relative to the Fermi level of the conductive substrate was determined for various substrates. The alignment between the Fermi level of conductive substrate and Fermi level of TiOPc film at fixed energy in the bandgap was not observed for the TiOPc film prepared in UHV, possibly because of insufficient charge density in the TiOPc film. This situation was drastically changed when the TiOPc film exposed to O 2 , and clear alignment of the Fermi level fixed at 0.6 eV above the HOMO with the Fermi level of the conducting substrate was observed, probably by p-type doping effect of oxygen. These are the first direct and quantitative information about bulk oxygen doping from the viewpoint of the electronic structure. These results suggest that similar band bending with Fermi level alignment may be also achieved for other organic semiconductors under practical device conditions, and also call for caution at the comparison of experimental

  16. In Situ One-Step Synthesis of Hierarchical Nitrogen-Doped Porous Carbon for High Performance Supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Ju Won [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Texas A & M Univ., College Station, TX (United States); Sharma, Ronish [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Meduri, Praveen [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Arey, Bruce W. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Schaef, Herbert T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lutkenhaus, Jodie [Texas A & M Univ., College Station, TX (United States); Lemmon, John P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Thallapally, Praveen K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nandasiri, Manjula I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McGrail, B. Peter [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nune, Satish K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2014-04-30

    Electrochemical performance of the existing state-of-the art capacitors is not very high, key scientific barrier is that its charge storage mechanism wholly depends on adsorption of electrolyte on electrode. We present a novel method for the synthesis of nitrogen -doped porous carbons and address the drawback by precisely controlling composition and surface area. Nitrogen-doped porous carbon was synthesized using a self-sacrificial template technique without any additional nitrogen and carbon sources. They exhibited exceptionally high capacitance (239 Fg-1) due to additional pseudocapacitance originating from doped nitrogen. Cycling tests showed no obvious capacitance decay even after 10,000 cycles, which meets the requirement of commercial supercapacitors. Our method is simple and highly efficient for the production of large quantities of nitrogen-doped porous carbons.

  17. Transient spectral hole burning observed on the single-molecule level in terrylene-doped biphenyl

    International Nuclear Information System (INIS)

    Pärs, M.; Palm, V.; Kikas, J.

    2014-01-01

    We use the method of fluorescence correlation spectroscopy to analyze the single-molecule (SM) spectroscopy data earlier recorded for a special type of terrylene SM impurity center (referred as “spectrally confined unstable molecule”, SCM) in an incommensurate single crystal of biphenyl. The SCM's SM line seems to be chaotically jumping around within a broad “spectral envelope” and was first considered being subject to a peculiar spectral diffusion behavior. However, our correlation analysis reveals that all the features observed for SCM at 1.8 K are consistent with an assumption that this SM center participates in a process of reversible (transient) spectral hole burning (THB) earlier observed for terrylene-doped polycrystalline biphenyl. No observations of THB processes on SM level have been so far reported for this impurity system, partially due to a low concentration of relevant impurity centers. Another reason making searching for such centers experimentally challenging is an unusual SM line behavior: the photoinduced transition to a metastable “dark state” leads to the SM line saturational broadening, which is much stronger than the triplet broadening. Hence required prolonged observation is often prevented by an SM act of persistent spectral hole burning. - Highlights: • SCM—special type of terrylene single-molecule center in incommensurate biphenyl. • An unusually stable SCM was investigated during several hours at T=1.8 K. • SCM undergoes photoinduced transitions to an unknown metastable “dark state” (DS). • The long DS lifetime causes strong saturational broadening of SCM spectral line. • SCM participates in an earlier observed process of transient hole burning

  18. Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2013-07-01

    Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

  19. High yield and facile microwave-assisted synthesis of conductive H_2SO_4 doped polyanilines

    International Nuclear Information System (INIS)

    Gizdavic-Nikolaidis, Marija R.; Jevremovic, Milutin M.; Milenkovic, Maja; Allison, Morgan C.; Stanisavljev, Dragomir R.; Bowmaker, Graham A.; Zujovic, Zoran D.

    2016-01-01

    The microwave-assisted synthesis of polyaniline (PANI) was performed using ammonium persulphate (APS) as oxidizing agent in 0.5 M–2.5 M concentration range of aqueous sulphuric acid (H_2SO_4) at 93 W applied microwave power of 10 min duration. The microwave (MW) synthesized PANIs had 3 times higher yield in comparison to PANI samples prepared using a classical method, CS (0 W MW power) at the same temperature for 10 min synthesis duration period. Fourier Transform Infrared (FTIR) and UV–Vis spectroscopies confirmed the formation of PANI structure in all products. The influence of H_2SO_4 acid dopant on the spin concentration of MW and CS H_2SO_4 doped PANI samples were examined by EPR spectroscopy, while the morphological characteristics were investigated by using scanning electron microscopy (SEM). XRD results showed amorphous phases in both MW and CS H_2SO_4 doped PANI samples. Conductivity measurements revealed ∼1.5 times higher conductivity values for MW H_2SO_4 doped PANI samples in comparison with PANI samples prepared by the CS method under same condition. The influence of sulfate anion in comparison to chloride anion as a dopant on morphological, dopant levels and conductivity properties of MW PANI samples were also investigated. - Highlights: • Nanoporous microwave synthesized doped polyanilines as chemical sensor material. • Morphology and physical properties of polyanilines depend on acid concentration. • Spin concentration is determined by the nature of the polyaniline synthesis.

  20. Imaging of High-Z doped, Imploded Capsule Cores

    Science.gov (United States)

    Prisbrey, Shon T.; Edwards, M. John; Suter, Larry J.

    2006-10-01

    The ability to correctly ascertain the shape of imploded fusion capsules is critical to be able to achieve the spherical symmetry needed to maximize the energy yield of proposed fusion experiments for the National Ignition Facility. Implosion of the capsule creates a hot, dense core. The introduction of a high-Z dopant into the gas-filled core of the capsule increases the amount of bremsstrahlung radiation produced in the core and should make the imaging of the imploded core easier. Images of the imploded core can then be analyzed to ascertain the symmetry of the implosion. We calculate that the addition of Ne gas into a deuterium gas core will increase the amount of radiation emission while preserving the surrogacy of the radiation and hydrodynamics in the indirect drive NIF hohlraum in the proposed cryogenic hohlraums. The increased emission will more easily enable measurement of asymmetries and tuning of the implosion.

  1. Landau levels from neutral Bogoliubov particles in two-dimensional nodal superconductors under strain and doping gradients

    Science.gov (United States)

    Nica, Emilian M.; Franz, Marcel

    2018-02-01

    Motivated by recent work on strain-induced pseudomagnetic fields in Dirac and Weyl semimetals, we analyze the possibility of analogous fields in two-dimensional nodal superconductors. We consider the prototypical case of a d -wave superconductor, a representative of the cuprate family, and find that the presence of weak, spatially varying strain leads to pseudomagnetic fields and Landau quantization of Bogoliubov quasiparticles in the low-energy sector. A similar effect is induced by the presence of generic, weak doping gradients. In contrast to genuine magnetic fields in superconductors, the strain- and doping-gradient-induced pseudomagnetic fields couple in a way that preserves time-reversal symmetry and is not subject to the screening associated with the Meissner effect. These effects can be probed by tuning weak applied supercurrents which lead to shifts in the energies of the Landau levels and hence to quantum oscillations in thermodynamic and transport quantities.

  2. Other-than-high-level waste

    International Nuclear Information System (INIS)

    Bray, G.R.

    1976-01-01

    The main emphasis of the work in the area of partitioning transuranic elements from waste has been in the area of high-level liquid waste. But there are ''other-than-high-level wastes'' generated by the back end of the nuclear fuel cycle that are both large in volume and contaminated with significant quantities of transuranic elements. The combined volume of these other wastes is approximately 50 times that of the solidified high-level waste. These other wastes also contain up to 75% of the transuranic elements associated with waste generated by the back end of the fuel cycle. Therefore, any detailed evaluation of partitioning as a viable waste management option must address both high-level wastes and ''other-than-high-level wastes.''

  3. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  4. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  5. High-temperature thermoelectric properties of La-doped BaSnO3 ceramics

    International Nuclear Information System (INIS)

    Yasukawa, Masahiro; Kono, Toshio; Ueda, Kazushige; Yanagi, Hiroshi; Hosono, Hideo

    2010-01-01

    To elucidate the thermoelectric properties at high temperatures, perovskite-type La-doped BaSnO 3 ceramics were fabricated by a polymerized complex (PC) method and subsequent spark plasma sintering (SPS) technique. Fine powders of Ba 1-x La x SnO 3 (x = 0.00-0.07) were prepared by the PC method using citrate complexes, and SPS treatment converted the powders into dense ceramics with relative densities of 93-97%. The La content dependence of the lattice parameter suggested that the solubility of La for Ba sites was approximately x = 0.03. The temperature dependence of the electrical conductivity σ and Seebeck coefficient S showed that each La-doped ceramic was an n-type degenerate semiconductor in the measured temperature range of 373-1073 K. The La content dependence of the S values indicated that the electron carrier concentration increased successively up to x = 0.03, which was the solubility limit of the La atoms. The thermoelectric power factors S 2 σ increased drastically with La doping, and reached a maximum for x = 0.01 with values of 0.8 x 10 -4 W m -1 K -2 at 373 K to 2.8 x 10 -4 W m -1 K -2 at 1073 K.

  6. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    International Nuclear Information System (INIS)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

    2016-01-01

    Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

  7. First-principles study on the effect of high In doping on the conductivity of ZnO

    International Nuclear Information System (INIS)

    Hou Qing-Yu; Li Ji-Jun; Ying Chun; Zhao Chun-Wang; Zhao Er-Jun; Zhang Yue

    2013-01-01

    Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly In-doped supercells of Zn 0.9375 In 0.0625 O and Zn 0.875 In 0.125 O are constructed, and the geometry optimizations of the three models are carried out. The total density of states (DOS) and the band structures (BS) are also calculated. The calculation results show that in the range of high doping concentration, when the doping concentration is hihger than a specific value, the conductivity decreases with the increase of the doping concentration of In in ZnO, which is in consistence with the change trend of the experimental results

  8. Preparation of high-purity Pr{sup 3+} doped Ge–As–Se–In–I glasses for active mid-infrared optics

    Energy Technology Data Exchange (ETDEWEB)

    Karaksina, E.V.; Shiryaev, V.S., E-mail: shiryaev@ihps.nnov.ru; Kotereva, T.V.; Velmuzhov, A.P.; Ketkova, L.A.; Snopatin, G.E.

    2016-09-15

    The multi-stage method for the synthesis of high-purity Ge–As–Se–In–I glasses doped with Pr{sup 3+} ions is developed. It is based on the chemical distillation purification of glass-forming melt and the chemical transport reactions for purification and vacuum loading of indium. The level of purity of glasses, synthesized by this method, is higher in comparison with the traditional direct melting method for glass synthesis. The high-purity Pr{sup 3+}-doped Ge–As–Se–In and Pr{sup 3+}-doped Ge–As–Se–In–I glass samples are prepared; the optical, thermal and luminescent properties are investigated. The purest host glass samples, obtained by the multi-stage purification techniques, contain a low concentration of limiting impurities: hydrogen − ≤0.05 ppm (wt) and oxygen − ≤0.1 ppm (wt), that is, at present, the best result for multi-component chalcogenide glasses for mid-IR active fibers. The samples of Pr{sup 3+}-doped Ge–As–Se–In glass fibers have the minimum optical losses of 0.58 dB/m at the wavelength of 2.72 μm and exhibit an intense broadband luminescence in the spectral range of 3.5–5.5 μm, with a maximum shifted to longer wavelengths as compared with the bulk samples.

  9. Optical properties of highly Er{sup 3+}-doped sodium-aluminium-phosphate glasses for broadband 1.5 {mu}m emission

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, A. Amarnath [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Babu, S. Surendra [Laser Instrumentation Design Centre, Instrument Research and Development Establishment, Dehradun 248008 (India); Pradeesh, K. [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Otton, C.J. [Valencia Nanophotonics Technology Center, Universidad Politecnica de Valencia, 46022 Valencia (Spain); Vijaya Prakash, G., E-mail: prakash@physics.iitd.ac.in [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)

    2011-03-03

    Research highlights: > Highly Er{sup 3+} doped phosphate glasses for the 1.54 {mu}m laser emission were explored. > Emission from these doped glasses shows larger lifetimes and quantum efficiencies. > Optical amplifier parameters are greater than other reported phosphate glasses. > The durability and obtained results are most favourable for short-length amplifiers. - Abstract: Erbium-doped Na{sub 3}Al{sub 2}P{sub 3}O{sub 12} (NAP) glasses with compositions 92NAP-(8-x)Al{sub 2}O{sub 3}-(x)Er{sub 2}O{sub 3} (where x = 2-8) were prepared and characterized for absorption, visible and NIR emission and decay time properties. Judd-Ofelt analysis has been carried out to predict radiative properties of luminescent levels of Er{sup 3+} ions. Comparatively larger photoluminescence lifetimes (7.86 ms) and larger quantum efficiencies (74%) for the laser transition, {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} (at 1.54 {mu}m) are observed. The moisture insensitivity, large Er{sup 3+} ion doping capability and relatively high-gain and broad emission at 1.5 {mu}m are the most notable features of these glasses to realize efficient short-length optical amplifiers.

  10. A high-performance supercapacitor electrode based on N-doped porous graphene

    Science.gov (United States)

    Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

    2018-05-01

    The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

  11. Highly efficient synthesis of ordered nitrogen-doped mesoporous carbons with tunable properties and its application in high performance supercapacitors

    Science.gov (United States)

    Liu, Dan; Zeng, Chao; Qu, Deyu; Tang, Haolin; Li, Yu; Su, Bao-Lian; Qu, Deyang

    2016-07-01

    Nitrogen-doped ordered mesoporous carbons (OMCs) have been synthesized via aqueous cooperative assembly route in the presence of basic amino acids as either polymerization catalysts or nitrogen dopants. This method allows the large-scale production of nitrogen-doped OMCs with tunable composition, structure and morphology while maintaining highly ordered mesostructures. For instances, the nitrogen content can be varied from ∼1 wt% to ∼6.3 wt% and the mesophase can be either 3-D body-centered cubic or 2-D hexagonal. The specific surface area for typical OMCs is around 600 m2 g-1, and further KOH activation can significantly enhance the surface area to 1866 m2 g-1 without destroying the ordered mesostructures. Benefiting from hierarchically ordered porous structure, nitrogen-doping effect and large-scale production availability, the synthesized OMCs show a great potential towards supercapacitor application. When measured in a symmetrical two-electrode configuration with an areal mass loading of ∼3 mg cm-2, the activated OMC exhibits high capacitance (186 F g-1 at 0.25 A g-1) and good rate capability (75% capacity retention at 20 A g-1) in ionic liquid electrolyte. Even as the mass loading is up to ∼12 mg cm-2, the OMC electrode still yields a specific capacitance of 126 F g-1 at 20 A g-1.

  12. Excitons and trions in modulation doped structures in high magnetic fields

    International Nuclear Information System (INIS)

    Kochereshko, V.; Andronikov, D.; Platonov, A.; Crooker, S.; Barrick, T.; Karczewski, G.; Tronc, P.

    2004-01-01

    Photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two-dimensional electron gases of low, moderate and high electron concentrations were studied in high magnetic fields up to 45 T. The recombination line of triplet trion state was found in the spectra. A model calculation of photoluminescence spectra in magnetic fields, which takes into account singlet and triplet trion states, was carried out. It was shown that the dark triplet becomes observable in photoluminescence spectra because it becomes the only recombination channel when the formation of the singlet trion state is suppressed by magnetic fields. (author)

  13. Low Reflectivity and High Flexibility of Tin-Doped Indium Oxide Nanofiber Transparent Electrodes

    KAUST Repository

    Wu, Hui

    2011-01-12

    Tin-doped indium oxide (ITO) has found widespread use in solar cells, displays, and touch screens as a transparent electrode; however, two major problems with ITO remain: high reflectivity (up to 10%) and insufficient flexibility. Together, these problems severely limit the applications of ITO films for future optoelectronic devices. In this communication, we report the fabrication of ITO nanofiber network transparent electrodes. The nanofiber networks show optical reflectivity as low as 5% and high flexibility; the nanofiber networks can be bent to a radius of 2 mm with negligible changes in the sheet resistance. © 2010 American Chemical Society.

  14. Theory of novel normal and superconducting states in doped oxide high-Tc superconductors

    International Nuclear Information System (INIS)

    Dzhumanov, S.

    2001-10-01

    A consistent and complete theory of the novel normal and superconducting (SC) states of doped high-T c superconductors (HTSC) is developed by combining the continuum model of carrier self-trapping, the tight-binding model and the novel Fermi-Bose-liquid (FBL) model. The ground-state energy of carriers in lightly doped HTSC is calculated within the continuum model and adiabatic approximation using the variational method. The destruction of the long-range antiferromagnetic (AF) order at low doping x≥ x cl ≅0.015, the formation of the in-gap states or bands and novel (bi)polaronic insulating phases at x c2 ≅0.06-0.08, and the new metal- insulator transition at x≅x c2 in HTSC are studied within the continuum model of impurity (defect) centers and large (bi)polarons by using the appropriate tight-binding approximations. It is found that the three-dimensional (3d) large (bi)polarons are formed at ε ∞ /ε 0 ≤0.1 and become itinerant when the (bi)polaronic insulator-to-(bi)polaronic metal transitions occur at x x c2 . We show that the novel pseudogapped metallic and SC states in HTSC are formed at x c2 ≤x≤x p ≅0.20-0.24. We demonstrate that the large polaronic and small BCS-like pairing pseudogaps opening in the excitation spectrum of underdoped (x c2 BCS =0.125), optimally doped (x BCS o ≅0.20) and overdoped (x>x o ) HTSC above T c are unrelated to superconductivity and they are responsible for the observed anomalous optical, transport, magnetic and other properties of these HTSC. We develop the original two-stage FBL model of novel superconductivity describing the combined novel BCS-like pairing scenario of fermions and true superfluid (SF) condensation scenario of composite bosons (i.e. bipolarons and cooperons) in any Fermi-systems, where the SF condensate gap Δ B and the BCS-like pairing pseudogap Δ F have different origins. The pair and single particle condensations of attracting 3d and two- dimensional (2d) composite bosons are responsible for

  15. Assessment of effect of Yb3+ ion pairs on a highly Yb-doped double-clad fibre laser

    Science.gov (United States)

    Vallés, J. A.; Martín, J. C.; Berdejo, V.; Cases, R.; Álvarez, J. M.; Rebolledo, M. Á.

    2018-03-01

    Using a previously validated characterization method based on the careful measurement of the characteristic parameters and fluorescence emission spectra of a highly Yb-doped double-clad fibre, we evaluate the contribution of ion pair induced processes to the output power of a double-clad Yb-doped fibre ring laser. This contribution is proved to be insignificant, contrary to analysis by other authors, who overestimate the role of ion pairs.

  16. Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

    Directory of Open Access Journals (Sweden)

    M. Hakimi

    2008-06-01

    Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

  17. Highly Doped Phosphate Glass Fibers for Compact Lasers and Amplifiers: A Review

    Directory of Open Access Journals (Sweden)

    Nadia Giovanna Boetti

    2017-12-01

    Full Text Available In recent years, the exploitation of compact laser sources and amplifiers in fiber form has found extensive applications in industrial and scientific fields. The fiber format offers compactness, high beam quality through single-mode regime and excellent heat dissipation, thus leading to high laser reliability and long-term stability. The realization of devices based on this technology requires an active medium with high optical gain over a short length to increase efficiency while mitigating nonlinear optical effects. Multicomponent phosphate glasses meet these requirements thanks to the high solubility of rare-earth ions in their glass matrix, alongside with high emission cross-sections, chemical stability and high optical damage threshold. In this paper, we review recent advances in the field thanks to the combination of highly-doped phosphate glasses and innovative fiber drawing techniques. We also present the main performance achievements and outlook both in continuous wave (CW and pulsed mode regimes.

  18. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  19. SIGWX Charts - High Level Significant Weather

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — High level significant weather (SIGWX) forecasts are provided for the en-route portion of international flights. NOAA's National Weather Service Aviation Center...

  20. Cobalt-Doped Nickel Phosphite for High Performance of Electrochemical Energy Storage.

    Science.gov (United States)

    Li, Bing; Shi, Yuxin; Huang, Kesheng; Zhao, Mingming; Qiu, Jiaqing; Xue, Huaiguo; Pang, Huan

    2018-03-01

    Compared to single metallic Ni or Co phosphides, bimetallic Ni-Co phosphides own ameliorative properties, such as high electrical conductivity, remarkable rate capability, upper specific capacity, and excellent cycle performance. Here, a simple one-step solvothermal process is proposed for the synthesis of bouquet-like cobalt-doped nickel phosphite (Ni 11 (HPO 3 ) 8 (OH) 6 ), and the effect of the structure on the pseudocapacitive performance is investigated via a series of electrochemical measurements. It is found that when the cobalt content is low, the glycol/deionized water ratio is 1, and the reaction is under 200 °C for 20 h, the morphology of the sample is uniform and has the highest specific surface area. The cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 electrode presents a maximum specific capacitance of 714.8 F g -1 . More significantly, aqueous and solid-state flexible electrochemical energy storage devices are successfully assembled. The aqueous device shows a high energy density of 15.48 mWh cm -2 at the power density of 0.6 KW cm -2 . The solid-state device shows a high energy density of 14.72 mWh cm -2 at the power density of 0.6 KW cm -2 . These excellent performances confirm that the cobalt-doped Ni 11 (HPO 3 ) 8 (OH) 6 are promising materials for applications in electrochemical energy storage devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Synergistic interaction and controllable active sites of nitrogen and sulfur co-doping into mesoporous carbon sphere for high performance oxygen reduction electrocatalysts

    Science.gov (United States)

    Oh, Taeseob; Kim, Myeongjin; Park, Dabin; Kim, Jooheon

    2018-05-01

    Nitrogen and sulfur co-doped mesoporous carbon sphere (NSMCS) was prepared as a metal-free catalyst by an economical and facile pyrolysis process. The mesoporous carbon spheres were derived from sodium carboxymethyl cellulose as the carbon source and the nitrogen and sulfur dopants were derived from urea and p-benzenedithiol, respectively. The doping level and chemical states of nitrogen and sulfur in the prepared NSMCS can be easily adjusted by controlling the pyrolysis temperature. The NSMCS pyrolyzed at 900 °C (NSMCS-900) exhibited higher oxygen reduction reaction activity than the mesoporous carbon sphere doped solely with nitrogen or sulfur, due to the synergistic effect of co-doping. Among all the NSMCS samples, NSMCS-900 exhibited excellent ORR catalytic activity owing to the presence of a highly active site, consisting of pyridinic N, graphitic N, and thiophene S. Remarkably, the NSMCS-900 catalyst was comparable with commercial Pt/C, in terms of the onset and the half-wave potentials and showed better durability than Pt/C for ORR in an alkaline electrolyte. The approach demonstrated in this work could be used to prepare promising metal-free electrocatalysts for application in energy conversion and storage.

  2. The Effect of Eu Doping on Microstructure, Morphology and Methanal-Sensing Performance of Highly Ordered SnO2 Nanorods Array

    Directory of Open Access Journals (Sweden)

    Yanping Zhao

    2017-11-01

    Full Text Available Layered Eu-doped SnO2 ordered nanoarrays constructed by nanorods with 10 nm diameters and several hundred nanometers length were synthesized by a substrate-free hydrothermal route using alcohol and water mixed solvent of sodium stannate and sodium hydroxide at 200 °C. The Eu dopant acted as a crystal growth inhibitor to prevent the SnO2 nanorods growth up, resulting in tenuous SnO2 nanorods ordered arrays. The X-ray diffraction (XRD revealed the tetragonal rutile-type structure with a systematic average size reduction and unit cell volume tumescence, while enhancing the residual strain as the Eu-doped content increases. The surface defects that were caused by the incorporation of Eu ions within the surface oxide matrix were observed by high-resolution transmission electron microscope (HRTEM. The results of the response properties of sensors based on the different levels of Eu-doped SnO2 layered nanoarrays demonstrated that the 0.5 at % Eu-doped SnO2 layered nanorods arrays exhibited an excellent sensing response to methanal at 278 °C. The reasons of the enhanced sensing performance were discussed from the complicated defect surface structure, the large specific surface area, and the excellent catalytic properties of Eu dopant.

  3. Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

    Science.gov (United States)

    Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

    2018-06-01

    ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

  4. One-pot synthetic method to prepare highly N-doped nanoporous carbons for CO2 adsorption

    International Nuclear Information System (INIS)

    Meng, Long-Yue; Park, Soo-Jin

    2014-01-01

    A one-pot synthetic method was used for the preparation of nanoporous carbon containing nitrogen from polypyrrole (PPY) using NaOH as the activated agent. The activation process was carried out under set conditions (NaOH/PPY = 2 and NaOH/PPY = 4) at different temperatures in 600–900 °C for 2 h. The effect of the activation conditions on the pore structure, surface functional groups and CO 2 adsorption capacities of the prepared N-doped activated carbons was examined. The carbon was analyzed by X-ray photoelectron spectroscopy (XPS), N2/77 K full isotherms, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The CO 2 adsorption capacity of the N-doped activated carbon was measured at 298 K and 1 bar. By dissolving the activation agents, the N-doped activated carbon exhibited high specific surface areas (755–2169 m 2 g −1 ) and high pore volumes (0.394–1.591 cm 3 g −1 ). In addition, the N-doped activated carbons contained a high N content at lower activation temperatures (7.05 wt.%). The N-doped activated carbons showed a very high CO 2 adsorption capacity of 177 mg g −1 at 298 K and 1 bar. The CO 2 adsorption capacity was found to be dependent on the microporosity and N contents. - Highlights: • A one-pot synthetic method was used for the preparation of N-doped nanoporous carbons. • Polypyrrole (PPY) were activated with NaOH under set conditions (NaOH/PPY = 2 and 4). • N-doped activated carbon exhibited high specific surface areas (2169 m 2 g −1 ). • The carbons showed a very high CO 2 adsorption capacity of 177 mg g −1 at 298 K

  5. Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

    Science.gov (United States)

    Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

    2015-03-12

    Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

  6. Nitrogen-doped diamond electrode shows high performance for electrochemical reduction of nitrobenzene

    International Nuclear Information System (INIS)

    Zhang, Qing; Liu, Yanming; Chen, Shuo; Quan, Xie; Yu, Hongtao

    2014-01-01

    Highlights: • A metal-free nitrogen-doped diamond electrode was synthesized. • The electrode exhibits high electrocatalytic activity for nitrobenzene reduction. • The electrode exhibits high selectivity for reduction of nitrobenzene to aniline. • High energy efficiency was obtained compared with graphite electrode. -- Abstract: Effective electrode materials are critical to electrochemical reduction, which is a promising method to pre-treat anti-oxidative and bio-refractory wastewater. Herein, nitrogen-doped diamond (NDD) electrodes that possess superior electrocatalytic properties for reduction were fabricated by microwave-plasma-enhanced chemical vapor deposition technology. Nitrobenzene (NB) was chosen as the probe compound to investigate the material's electro-reduction activity. The effects of potential, electrolyte concentration and pH on NB reduction and aniline (AN) formation efficiencies were studied. NDD exhibited high electrocatalytic activity and selectivity for reduction of NB to AN. The NB removal efficiency and AN formation efficiency were 96.5% and 88.4% under optimal conditions, respectively; these values were 1.13 and 3.38 times higher than those of graphite electrodes. Coulombic efficiencies for NB removal and AN formation were 27.7% and 26.1%, respectively; these values were 4.70 and 16.6 times higher than those of graphite electrodes under identical conditions. LC–MS analysis revealed that the dominant reduction pathway on the NDD electrode was NB to phenylhydroxylamine (PHA) to AN

  7. Recovering method for high level radioactive material

    International Nuclear Information System (INIS)

    Fukui, Toshiki

    1998-01-01

    Offgas filters such as of nuclear fuel reprocessing facilities and waste control facilities are burnt, and the burnt ash is melted by heating, and then the molten ashes are brought into contact with a molten metal having a low boiling point to transfer the high level radioactive materials in the molten ash to the molten metal. Then, only the molten metal is evaporated and solidified by drying, and residual high level radioactive materials are recovered. According to this method, the high level radioactive materials in the molten ashes are transferred to the molten metal and separated by the difference of the distribution rate of the molten ash and the molten metal. Subsequently, the molten metal to which the high level radioactive materials are transferred is heated to a temperature higher than the boiling point so that only the molten metal is evaporated and dried to be removed, and residual high level radioactive materials are recovered easily. On the other hand, the molten ash from which the high level radioactive material is removed can be discarded as ordinary industrial wastes as they are. (T.M.)

  8. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  9. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  10. High transmittance optical films based on quantum dot doped nanoscale polymer dispersed liquid crystals

    Science.gov (United States)

    Gandhi, Sahil Sandesh; Chien, Liang-Chy

    2016-04-01

    We propose a simple way to fabricate highly transparent nanoscale polymer dispersed liquid crystal (nano-PDLC) films between glass substrates and investigate their incident angle dependent optical transmittance properties with both collimated and Lambertian intensity distribution light sources. We also demonstrate that doping nano-PDLC films with 0.1% InP/ZnS core/shell quantum dots (QD) results in a higher optical transmittance. This work lays the foundation for such nanostructured composites to potentially serve as roll-to-roll coatable light extraction or brightness enhancement films in emissive display applications, superior to complex nanocorrugation techniques proposed in the past.

  11. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  12. Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

    Science.gov (United States)

    Li, Stephen X.; Merritt, Scott; Krainak, Michael A.; Yu, Anthony

    2018-01-01

    High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

  13. Disposal of high level and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Flowers, R.H.

    1991-01-01

    The waste products from the nuclear industry are relatively small in volume. Apart from a few minor gaseous and liquid waste streams, containing readily dispersible elements of low radiotoxicity, all these products are processed into stable solid packages for disposal in underground repositories. Because the volumes are small, and because radioactive wastes are latecomers on the industrial scene, a whole new industry with a world-wide technological infrastructure has grown up alongside the nuclear power industry to carry out the waste processing and disposal to very high standards. Some of the technical approaches used, and the Regulatory controls which have been developed, will undoubtedly find application in the future to the management of non-radioactive toxic wastes. The repository site outlined would contain even high-level radioactive wastes and spent fuels being contained without significant radiation dose rates to the public. Water pathway dose rates are likely to be lowest for vitrified high-level wastes with spent PWR fuel and intermediate level wastes being somewhat higher. (author)

  14. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  15. Biomass derived nitrogen-doped hierarchical porous carbon sheets for supercapacitors with high performance.

    Science.gov (United States)

    Wang, Cunjing; Wu, Dapeng; Wang, Hongju; Gao, Zhiyong; Xu, Fang; Jiang, Kai

    2018-08-01

    A facile potassium chloride salt-locking technique combined with hydrothermal treatment on precursors was explored to prepare nitrogen-doped hierarchical porous carbon sheets in air from biomass. Benefiting from the effective synthesis strategy, the as-obtained carbon possesses a unique nitrogen-doped thin carbon sheet structure with abundant hierarchical pores and large specific surface areas of 1459 m 2  g -1 . The doped nitrogen in carbon framework has a positive effect on the electrochemical properties of the electrode material, the thin carbon sheet structure benefits for fast ion transfer, the abundant meso-pores provide convenient channels for rapid charge transportation, large specific surface area and lots of micro-pores guarantee sufficient ion-storage sites. Therefore, applied for supercapacitors, the carbon electrode material exhibits an outstanding specific capacitance of 451 F g -1 at 0.5 A g -1 in a three-electrode system. Moreover, the assembled symmetric supercapacitor based on two identical carbon electrodes also displays high specific capacitance of 309 F g -1 at 0.5 A g -1 , excellent rate capacity and remarkable cycling stability with 99.3% of the initial capacitance retention after 10,000 cycles at 5 A -1 . The synthesis strategy avoids expensive inert gas protection and the use of corrosive KOH and toxic ZnCl 2 activated reagents, representing a promising green route to design advanced carbon electrode materials from biomass for high-capacity supercapacitors. Copyright © 2018. Published by Elsevier Inc.

  16. Current high-level waste solidification technology

    International Nuclear Information System (INIS)

    Bonner, W.F.; Ross, W.A.

    1976-01-01

    Technology has been developed in the U.S. and abroad for solidification of high-level waste from nuclear power production. Several processes have been demonstrated with actual radioactive waste and are now being prepared for use in the commercial nuclear industry. Conversion of the waste to a glass form is favored because of its high degree of nondispersibility and safety

  17. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  18. Ultrabroadband terahertz characterization of highly doped ZnO and ITO

    DEFF Research Database (Denmark)

    Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

    2015-01-01

    The broadband complex conductivities of transparent conducting oxides (TCO), namely, aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by using THz-TDS from 0.5 to 18 THz. The complex conductivities were accurately calculated using...

  19. High-quality ZnO growth, doping, and polarization effect

    Science.gov (United States)

    Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

    2016-03-01

    The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

  20. Three-dimensional N-doped graphene/polyaniline composite foam for high performance supercapacitors

    Science.gov (United States)

    Zhu, Jun; Kong, Lirong; Shen, Xiaoping; Chen, Quanrun; Ji, Zhenyuan; Wang, Jiheng; Xu, Keqiang; Zhu, Guoxing

    2018-01-01

    Three-dimensional (3D) graphene aerogel and its composite with interconnected pores have aroused continuous interests in energy storage field owning to its large surface area and hierarchical pore structure. Herein, we reported the preparation of 3D nitrogen-doped graphene/polyaniline (N-GE/PANI) composite foam for supercapacitive material with greatly improved electrochemical performance. The 3D porous structure can allow the penetration and diffusion of electrolyte, the incorporation of nitrogen doping can enhance the wettability of the active material and the number of active sites with electrolyte, and both the N-GE and PANI can ensure the high electrical conductivity of total electrode. Moreover, the synergistic effect between N-GE and PANI materials also play an important role on the electrochemical performance of electrode. Therefore, the as-prepared composite foam could deliver a high specific capacitance of 528 F g-1 at 0.1 A g-1 and a high cyclic stability with 95.9% capacitance retention after 5000 charge-discharge cycles. This study provides a new idea on improving the energy storage capacity of supercapacitors by using 3D graphene-based psedocapacitive electrode materials.

  1. Rational hybrid modulation of P, N dual-doped holey graphene for high-performance supercapacitors

    Science.gov (United States)

    Nazarian-Samani, Masoud; Haghighat-Shishavan, Safa; Nazarian-Samani, Mahboobeh; Kim, Myeong-Seong; Cho, Byung-Won; Oh, Si-Hyoung; Kashani-Bozorg, Seyed Farshid; Kim, Kwang-Bum

    2017-12-01

    A P, N dual-doped holey graphene (PNHG) material is prepared by a scalable, facile synthetic approach, using a mixture of glucose, dicyandiamide (DCDA), and phosphoric acid (H3PO4). H3PO4 successfully functions as an "acid catalyst" to encourage the uniform breakage of C=C bonds to create large, localized perforations over the graphene monolith. Further acid treatment and annealing introduce in-plane holes. The correlation between the capacitance of the PNHG and its structural parameters during the fabrication process is comprehensively evaluated. A thermally induced sp2→sp3 transformation occurs at high temperatures because of the substantial loss of graphitic sp2-type carbons, together with a dramatic reduction in capacitance. The target PNHG-400 electrode material delivers exceptionally high gravimetric capacitance (235.5 F g-1 at 0.5 A g-1), remarkable rate capability (84.8% at 70 A g-1), superior capacitance retention (93.2 and 92.7% at 10 and 50 A g-1 over 25000 cycles, respectively), and acceptable volumetric capacitance due to moderate density, when it is used with organic electrolytes in the voltage range between 0 and 3 V. These results suggest a pioneering defect-engineered strategy to fabricate dual-doped holey graphene with valuable structural properties for high-performance electric double layer supercapacitors, which could be used in next-generation energy storage applications.

  2. Unexpectedly high piezoelectricity of Sm-doped lead zirconate titanate in the Curie point region.

    Science.gov (United States)

    Seshadri, Shruti B; Nolan, Michelle M; Tutuncu, Goknur; Forrester, Jennifer S; Sapper, Eva; Esteves, Giovanni; Granzow, Torsten; Thomas, Pam A; Nino, Juan C; Rojac, Tadej; Jones, Jacob L

    2018-03-07

    Large piezoelectric coefficients in polycrystalline lead zirconate titanate (PZT) are traditionally achieved through compositional design using a combination of chemical substitution with a donor dopant and adjustment of the zirconium to titanium compositional ratio to meet the morphotropic phase boundary (MPB). In this work, a different route to large piezoelectricity is demonstrated. Results reveal unexpectedly high piezoelectric coefficients at elevated temperatures and compositions far from the MPB. At temperatures near the Curie point, doping with 2 at% Sm results in exceptionally large piezoelectric coefficients of up to 915 pm/V. This value is approximately twice those of other donor dopants (e.g., 477 pm/V for Nb and 435 pm/V for La). Structural changes during the phase transitions of Sm-doped PZT show a pseudo-cubic phase forming ≈50 °C below the Curie temperature. Possible origins of these effects are discussed and the high piezoelectricity is posited to be due to extrinsic effects. The enhancement of the mechanism at elevated temperatures is attributed to the coexistence of tetragonal and pseudo-cubic phases, which enables strain accommodation during electromechanical deformation and interphase boundary motion. This work provides insight into possible routes for designing high performance piezoelectrics which are alternatives to traditional methods relying on MPB compositions.

  3. Pseudocapacitance of amorphous TiO2@nitrogen doped graphene composite for high rate lithium storage

    International Nuclear Information System (INIS)

    Li, Sheng; Xue, Pan; Lai, Chao; Qiu, Jingxia; Ling, Min; Zhang, Shanqing

    2015-01-01

    The high rate applications such as electric vehicles of the traditional lithium ion batteries (LIBs) are commonly limited by their insufficient electron conductivity and slow mass transport of lithium ions in bulk electrode materials. In order to address these issues, in this work, a simple and up-scalable wet-mechanochemical (wet-ball milling) route has been developed for fabrication of amorphous porous TiO 2 @nitrogen doped graphene (TiO 2 @N-G) nanocomposites. The amorphous phase, unique porous structure of TiO 2 and the surface defects from nitrogen doping to graphene planes have incurred surface controlled reactions, contributing pseudocapacitance to the total capacity of the battery. It plays a dominant role in producing outstanding high rate electrochemical performance, e.g., 182.7 mAh/g (at 3.36 A/g) after 100 cycles. The design and synthesis of electrode materials with enhanced conductivity and surface pseudocapacitance can be a promising way for high rate LIBs.

  4. N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jiawen Xiong

    2018-04-01

    Full Text Available Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g−1 after 150 cycles at 0.2 A g−1, and a high capacity of 531.2 mA h g−1 can be observed even after 5,000 cycles at 10.0 A g−1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g−1 can be obtained at 5.0 A g−1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

  5. Methanesulfonic acid-assisted synthesis of N/S co-doped hierarchically porous carbon for high performance supercapacitors

    Science.gov (United States)

    Huo, Silu; Liu, Mingquan; Wu, Linlin; Liu, Mingjie; Xu, Min; Ni, Wei; Yan, Yi-Ming

    2018-05-01

    Nitrogen and sulfur co-doped carbons are considered as electrode materials for high performance supercapacitors, while their further development is still limited by complicated synthesis procedure, unsatisfied structure and low energy density. Developing a simple synthetic strategy to obtain rationally structured carbon materials and high supercapacitor performance is remaining a grand challenge. Herein, we describe the synthesis of nitrogen and sulfur co-doped hierarchical porous carbons as high performance supercapacitors electrode by a methanesulfonic acid-assisted one-step carbonization and activation of the freeze-dried precursors mixture. The as-prepared carbon material not only exhibits ideally hierarchical pores, but also realizes uniform nitrogen and sulfur co-doping. In 6.0 M KOH electrolyte, the material can achieve a high specific capacitance of 272 F g-1 at 1.0 A g-1 and a promising rate performance retaining 172 F g-1 even at 100 A g-1. Moreover, a fabricated symmetric supercapacitor based on as-prepared nitrogen and sulfur co-doped hierarchical porous carbon delivers high energy densities of 12.4 W h kg-1 and 8.0 W h kg-1 in 6.0 M KOH liquid and KOH/PVA solid-state electrolytes, respectively. This work presents a simple and effective methanesulfonic acid-assisted approach for mass production of heteroatomic doping hierarchical porous carbons for future energy storage applications.

  6. High-Level Application Framework for LCLS

    Energy Technology Data Exchange (ETDEWEB)

    Chu, P; Chevtsov, S.; Fairley, D.; Larrieu, C.; Rock, J.; Rogind, D.; White, G.; Zalazny, M.; /SLAC

    2008-04-22

    A framework for high level accelerator application software is being developed for the Linac Coherent Light Source (LCLS). The framework is based on plug-in technology developed by an open source project, Eclipse. Many existing functionalities provided by Eclipse are available to high-level applications written within this framework. The framework also contains static data storage configuration and dynamic data connectivity. Because the framework is Eclipse-based, it is highly compatible with any other Eclipse plug-ins. The entire infrastructure of the software framework will be presented. Planned applications and plug-ins based on the framework are also presented.

  7. Fabrication of water-dispersible and highly conductive PSS-doped PANI/graphene nanocomposites using a high-molecular weight PSS dopant and their application in H2S detection

    Science.gov (United States)

    Cho, Sunghun; Lee, Jun Seop; Jun, Jaemoon; Kim, Sung Gun; Jang, Jyongsik

    2014-11-01

    This work describes the fabrication of poly(4-styrenesulfonic acid)-doped polyaniline/graphene (PSS-doped PANI/graphene) nanocomposites and their use as sensing elements for hydrogen sulfide (H2S) detection. PSS with a weight-average molecular weight (Mw) of 1.96 × 106 was synthesized using low-temperature free-radical polymerization. The PSS was used as both a doping agent and a binding agent for the polymerization of aniline monomers in a biphasic system (water-chloroform) at -50 °C. The high Mw of PSS resulted in relatively large particle sizes and smooth surfaces of the PSS-doped PANI. These physical characteristics, in turn, resulted in low interparticle resistance and high conductivity. In addition, the PSS allowed homogeneous dispersion of reduced graphene sheets through electrostatic repulsion. The prepared PSS-doped PANI/graphene solutions showed good compatibility with flexible poly(ethylene terephthalate) (PET) substrates, making them suitable for flexible sensor electrodes. Changes in the charge-transport properties, such as protonation level, conjugation length, crystalline structure, and charge-transfer resistance, of the electrode materials were the main factors influencing the electrical and sensor performance of the PSS-doped PANI-based electrodes. PSS-doped PANI/graphene composites containing 30 wt% graphene showed the highest conductivity (168.4 S cm-1) and the lowest minimum detection level (MDL) for H2S gas (1 ppm). This result is consistent with the observed improvements in charge transport in the electrode materials via strong π-π stacking interactions between the PANI and the graphene sheets.This work describes the fabrication of poly(4-styrenesulfonic acid)-doped polyaniline/graphene (PSS-doped PANI/graphene) nanocomposites and their use as sensing elements for hydrogen sulfide (H2S) detection. PSS with a weight-average molecular weight (Mw) of 1.96 × 106 was synthesized using low-temperature free-radical polymerization. The PSS was

  8. A synthesis method for cobalt doped carbon aerogels with high surface area and their hydrogen storage properties

    Energy Technology Data Exchange (ETDEWEB)

    Tian, H.Y.; Buckley, C.E. [Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth 6845, WA (Australia); CSIRO National Hydrogen Materials Alliance, CSIRO Energy Centre, 10 Murray Dwyer Circuit, Steel River Estate, Mayfield West, NSW 2304 (Australia); Sheppard, D.A.; Paskevicius, M. [Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth 6845, WA (Australia); Hanna, N. [CSIRO Process Science and Engineering, Waterford, WA (Australia)

    2010-12-15

    Carbon aerogels doped with nanoscaled Co particles were prepared by first coating activated carbon aerogels using a wet-thin layer coating process. The resulting metal-doped carbon aerogels had a higher surface area ({proportional_to}1667 m{sup 2} g{sup -1}) and larger micropore volume ({proportional_to}0.6 cm{sup 3} g{sup -1}) than metal-doped carbon aerogels synthesised using other methods suggesting their usefulness in catalytic applications. The hydrogen adsorption behaviour of cobalt doped carbon aerogel was evaluated, displaying a high {proportional_to}4.38 wt.% H{sub 2} uptake under 4.6 MPa at -196 C. The hydrogen uptake capacity with respect to unit surface area was greater than for pure carbon aerogel and resulted in {proportional_to}1.3 H{sub 2} (wt. %) per 500 m{sup 2} g{sup -1}. However, the total hydrogen uptake was slightly reduced as compared to pure carbon aerogel due to a small reduction in surface area associated with cobalt doping. The improved adsorption per unit surface area suggests that there is a stronger interaction between the hydrogen molecules and the cobalt doped carbon aerogel than for pure carbon aerogel. (author)

  9. Upconverting crystal/dextran-g-DOPE with high fluorescence stability for simultaneous photodynamic therapy and cell imaging

    International Nuclear Information System (INIS)

    Wang, HanJie; Wang, Sheng; Liu, Zhongyun; Dong, Chunhong; Chang, Jin; Yang, Jiumin; Gong, Xiaoqun

    2014-01-01

    To date, the application of photodynamic therapy in deep tissue has been severely restricted by the limited penetration depth of excitation light, such as UV light and visible light. In this work, a protocol of upconverting crystal/dextran-g-DOPE nanocomplex (UCN/dextran-g-DOPE) was developed. The nanocomplex was assembled from the hydrophobic upconverting nanoparticle (UCN) core and hydrophilic lipid shell. The photosensitizer zinc phthalocyanine (ZnPc) loaded UCN/dextran-g-DOPE offers possibilities to overcome the problem mentioned above. The UCN core works as a transducer to convert deeply penetrating near-infrared light to visible light to activate ZnPc for photodynamic therapy. The dextran-g-DOPE lipid shell is used for loading ZnPc and protecting the whole system from nonspecific absorbance or corrosion during the transportation. The experiment results show that the nanocomplex is an individual sphere with an average size of 30 nm. The ZnPc was activated to produce singlet oxygen successfully by the upconverting fluorescence emitted from UCN. The nanocomplex has high fluorescence stability in alkaline or neutral buffer solutions. Importantly, the ZnPc loaded UCN/dextran-g-DOPE nanocomplex showed a significant inhibitory effect on tumor cells after NIR exposure. Our data suggest that a ZnPc loaded UCN/dextran-g-DOPE nanocomplex may be a useful nanoplatform for future PDT treatment in deep-cancer therapy based on the upconverting mechanism. (paper)

  10. Effects of Yttrium and Iron co-doping on the high temperature thermoelectric properties of Ca{sub 3}Co{sub 4}O{sub 9+δ}

    Energy Technology Data Exchange (ETDEWEB)

    Wu, NingYu, E-mail: niwu@dtu.dk; Van Nong, Ngo; Pryds, Nini; Linderoth, Søren

    2015-07-25

    Highlights: • The Fe and Fe/Y doping at the Co- and Ca-sites of Ca{sub 3}Co{sub 4}O{sub 9+δ} were investigated. • The rising ρ by Y doping can be mitigated by the coupled Fe doping. • The increased Seebeck coefficient by Y doping can be maintained in co-doped system. • The co-doped system leads to an improvement of the thermoelectric performance. • The co-doped system may preserve the merits from each component doping. - Abstract: A series of Y and Fe co-doped Ca{sub 3−x}Y{sub x}Co{sub 4−y}Fe{sub y}O{sub 9+δ} (0 ⩽ x ⩽ 0.3, 0 ⩽ y ⩽ 0.1) samples synthesized by auto-combustion reaction and followed by a spark plasma sintering (SPS) processing with the effects of Fe and Y doping on the high temperature (RT to 800 °C) thermoelectric properties were systematically investigated. For the Fe-doped system (x = 0, y ⩽ 0.1), the electrical resistivity (ρ) decreased over the whole measured temperature range, while the Seebeck coefficient (S) remained almost the same. For the co-doped system, at any fixed Fe doping content, both ρ and S tended to increase with increasing Y dopants, however, the effect is more substantial on ρ than on S, particularly in the low temperature regime. In contrast to ρ and S, the in-plane thermal conductivity (κ) is only slightly influenced by Y and Fe substitutions. Among all the investigated samples, the co-doped sample with x = 0.1 and y = 0.03 showed a decrease of ρ, enhanced power factor over the measured temperature range, and improved ZT at 800 °C as compared to un-doped Ca{sub 3}Co{sub 4}O{sub 9+δ}.

  11. Optimum DMOS cell doping profiles for high-voltage discrete and integrated device technologies

    Science.gov (United States)

    Shenai, Krishna

    1992-05-01

    It is shown that the implantation and activation sequences of B and As result in significant variations in the contact resistance and p-base sheet resistance beneath the n+-source diffusion of a DMOSFET cell. For identical process parameters, the contact resistance of As-doped n+ silicon was significantly improved when high-dose B was implanted due to higher As surface concentration. The SUPREM III process modeling results were found to be in qualitative agreement with the measured spreading resistance profiles and the discrepancies could be attributed to larger high-temperature diffusion constants used in SUPREM III and the coupled As-B diffusion/activation effects that are not accounted for in process modeling. The experimental results are discussed within the framework of fabricating high-performance DMOSFET cells and CMOS high-voltage devices on the same chip for discrete and smart-power applications.

  12. TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

    International Nuclear Information System (INIS)

    Wong-Leung, J.; FitzGerald, J.D.

    2002-01-01

    Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

  13. Indium–tin-oxide coatings for applications in photovoltaics and displays deposited using rotary ceramic targets: Recent insights regarding process stability and doping level

    International Nuclear Information System (INIS)

    Lippens, Paul; Büchel, Michal; Chiu, David; Szepesi, Chris

    2013-01-01

    Several aspects related to high power sputtering with industrial scale sintered ceramic rotary indium–tin-oxide (ITO) targets are presented in the first part of this paper. In particular, the process stability and target integrity upon sputtering with ≥ 20 kW/m power load and the influence of the gap size between cylindrical segments are discussed. Results show that, in order to avoid nodule formation and deposition rate fluctuations, direct current (DC) power load needs to be limited well below 20 kW/m over long sputter runs. Additional work demonstrates that at a gap size at or below 0.15 mm, strongly adhering deposits form readily between cylindrical segments which are not observed with standard 0.35 mm gaps. The influence of Sn doping level on electro-optical properties of thin films targeting an application such as hetero-junction c-Si solar cells is also investigated. Again, rotary targets operated at high power (10 kW/m) are used, including standard grade ITO containing 10 wt.% SnO 2 and another composition with only 3 wt.% SnO 2 . The influence of H 2 and different concentrations of O 2 in the sputter gas is analysed for both target materials. Results indicate that although coatings derived from the lower-doped ITO exhibit considerably less absorption in the NIR due to lower carrier concentrations, their resistivity is nearly 30% higher than that from the standard ITO coating

  14. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  15. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    International Nuclear Information System (INIS)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

    2015-01-01

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g −1 at 100 mA g −1 after 30th cycles. At high current density value of 1 A g −1 , B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states

  16. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  17. Yb-doped phosphate double-cladding optical fiber for high-power laser applications

    Science.gov (United States)

    Mura, E.; Scarpignato, G. C.; Lousteau, J.; Boetti, N. G.; Abrate, S.; Milanese, D.

    2013-02-01

    A Yb-doped phosphate glass double cladding optical fiber was prepared using a custom designed glass composition (P2O5 - Al2O3 - Li2O - B2O3 - BaO - PbO - La2O3) for high-power amplifier and laser applications. The preform drawing method was followed, with the preform being fabricated using the rotational casting technique. This technique, previously developed for tellurite, fluoride or chalcogenide glass preforms is reported for the first time using rare earth doped phosphate glasses. The main challenge was to design an adequate numerical aperture between first and second cladding while maintaining similar thermo-mechanical properties in view of the fiber drawing process. The preform used for the fiber drawing was produced by rod-in-tube technique at a rotation speed of 3000 rpm. The rotational casting technique allowed the manufacturing of an optical fiber featuring high quality interfaces between core and internal cladding and between the internal and external cladding, respectively. Loss attenuation was measured using the cut-back method and lasing was demonstrated at 1022 nm by core pumping with a fiber pigtailed laser diode at the wavelength of 976 nm.

  18. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  19. Tuning Fermi level of Cr{sub 2}CoZ (Z=Al and Si) inverse Heusler alloys via Fe-doping for maximum spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mukhtiyar [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Saini, Hardev S. [Department of Physics, Panjab University, Chandigarh-160014 (India); Thakur, Jyoti [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Reshak, Ali H. [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Kashyap, Manish K., E-mail: manishdft@gmail.com [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India)

    2014-12-15

    We report full potential treatment of electronic and magnetic properties of Cr{sub 2−x}Fe{sub x}CoZ (Z=Al, Si) Heusler alloys where x=0.0, 0.25, 0.5, 0.75 and 1.0, based on density functional theory (DFT). Both parent alloys (Cr{sub 2}CoAl and Cr{sub 2}CoSi) are not half-metallic frromagnets. The gradual replacement of one Cr sublattice with Fe induces the half-metallicity in these systems, resulting maximum spin polarization. The half-metallicity starts to appear in Cr{sub 2−x}Fe{sub x}CoAl and Cr{sub 2−x}Fe{sub x}CoSi with x=0.50 and x=0.25, respectively, and the values of minority-spin gap and half-metallic gap or spin-flip gap increase with further increase of x. These gaps are found to be maximum for x=1.0 for both cases. An excellent agreement between the structural properties of CoFeCrAl with available experimental study is obtained. The Fermi level tuning by Fe-doping makes these alloys highly spin polarized and thus these can be used as promising candidates for spin valves and magnetic tunnelling junction applications. - Highlights: • Tuning of E{sub F} in Cr{sub 2}CoZ (Z=Al, Si) has been demonstrated via Fe doping. • Effect of Fe doping on half-metallicity and magnetism have been discussed. • The new alloys have a potential of being used as spin polarized electrodes.

  20. EAP high-level product architecture

    DEFF Research Database (Denmark)

    Guðlaugsson, Tómas Vignir; Mortensen, Niels Henrik; Sarban, Rahimullah

    2013-01-01

    EAP technology has the potential to be used in a wide range of applications. This poses the challenge to the EAP component manufacturers to develop components for a wide variety of products. Danfoss Polypower A/S is developing an EAP technology platform, which can form the basis for a variety...... of EAP technology products while keeping complexity under control. High level product architecture has been developed for the mechanical part of EAP transducers, as the foundation for platform development. A generic description of an EAP transducer forms the core of the high level product architecture...... the function of the EAP transducers to be changed, by basing the EAP transducers on a different combination of organ alternatives. A model providing an overview of the high level product architecture has been developed to support daily development and cooperation across development teams. The platform approach...

  1. Porous Carbon Spheres Doped with Fe_3C as an Anode for High-Rate Lithium-ion Batteries

    International Nuclear Information System (INIS)

    Chen, Shouhui; Wu, Jiafeng; Zhou, Rihui; Zuo, Li; Li, Ping; Song, Yonghai; Wang, Li

    2015-01-01

    Highlights: • Novel porous carbon spheres doped with Fe_3C was prepared via hydrothermal reaction. • The resulted material was fabricated as an anode for high-rate lithium-ion batteries. • A stepwise increase profile was shown in the discharge/charge process. • Pseudocapacity was one of the properties owned by the as-prepared anode. - Abstract: The search of advanced anodes has been an important way to satisfy the ever-growing demands on high rate performance lithium-ion batteries (LIBs). It was observed that the capacity of Fe_3C as an anode is larger than its theoretical one, which might be attributed to the pseudocapacity on the interface between the carbide and electrolyte. In this work, a novel carbon sphere doped with Fe_3C nanoparticles was fabricated and tested as the anode in LIBs. In the first place, iron precursors were embedded in the cross-link polymer resorcinol-formaldehyde (RF) spheres via a facile hydrothermal reaction, in which RF served as the carbon source and ethanol as a dispersant agent. Consequently, the hydrothermal products were carbonized successively at 700 °C under inert atmosphere to obtain porous carbon spheres doped with Fe_3C. When the composite severed as an anode in LIBs, its discharge capacity increased to the largest during the first 250-400 cycles, then dropped down to a similar level of that after 1000 cycles at different current rates. The discharge capacity of the composite increased from ∼300 mAh g"−"1 to ∼540 mAh g"−"1 at the current of 100 mA g"−"1 during the initial hundreds cycles, and even a discharge capacity of ∼230 mAh g"−"1 at the current of 2000 mA g"−"1. Moreover, it was observed that a discharge plateau gradually appeared between 0.7∼1.1 V during the first hundreds of cycles. The electrochemical behaviors of the anode before 1000 discharge/charge cycles were compared with that after 1000 discharge/charge cycles by cyclic voltammetry and electrochemical impedance spectroscopy to find

  2. Nitrogen-doped hierarchical porous carbon materials prepared from meta-aminophenol formaldehyde resin for supercapacitor with high rate performance

    International Nuclear Information System (INIS)

    Zhou, Jin; Zhang, Zhongshen; Xing, Wei; Yu, Jing; Han, Guoxing; Si, Weijiang; Zhuo, Shuping

    2015-01-01

    Graphical abstract: N-doped hierarchical porous carbons with high rate capacitive performance are prepared by a combination method of nano-SiO 2 template/KOH activation. - Highlights: • A mass produced nano-SiO 2 is used to prepared hierarchical porous carbon. • N-doped hierarchical porous carbon materials are easily prepared. • The NHPCs materials exhibit a very high capacitance of up to 260.5 F g −1 . • The NHPC-800 sample shows very high rate capability. • Hierarchical porosity and N-doping synergistically enhances the whole capacitance. - Abstract: In this work, nitrogen-doped hierarchical porous carbon materials (NHPCs) are prepared by a two-step method combined of a hard template process and KOH-activation treatment. Low cost and large-scale commercial nano-SiO 2 are used as a hard template. The hierarchical porosity, structure and nitrogen-doped surface chemical properties are proved by a varies of means, such as scanning electron microscopy, transition electron microscopy, N 2 sorption, Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. When the prepared NHPCs materials are used as the electrode materials for supercapacitors in KOH electrolyte, they exhibit very high specific capacitance, good power capability and excellent cyclic stability. NHPC-800 carbon shows a high capacitance of 114.0 F g −1 at the current density of 40 A g −1 , responding to a high energy and power densities of 4.0 Wh kg −1 and 10 000 W kg −1 , and a very short drain time of 1.4 s. The excellent capacitive performance may be due to the synergistic effect of the hierarchical porosity, high effective surface area and heteroatom doping, resulting in both electrochemical double layer and Faradaic capacitance contributions

  3. A novel Ni{sup 2+}-doped Ag{sub 3}PO{sub 4} photocatalyst with high photocatalytic activity and enhancement mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Song, Limin, E-mail: songlmnk@sohu.com [College of Environment and Chemical Engineering, State Key Laboratory of Hollow-Fiber Membrane Materials and Membrane Processes, Tianjin Polytechnic University, Tianjin 300387 (China); Chen, Zewen; Li, Tongtong [College of Environment and Chemical Engineering, State Key Laboratory of Hollow-Fiber Membrane Materials and Membrane Processes, Tianjin Polytechnic University, Tianjin 300387 (China); Zhang, Shujuan, E-mail: zhangshujuan@tust.edu.cn [College of Science, Tianjin University of Science & Technology, Tianjin, 300457 (China)

    2017-01-15

    Ni{sup 2+}-doped Ag{sub 3}PO{sub 4} (Ni{sup 2+}-Ag{sub 3}PO{sub 4}) photocatalysts with superhigh activity for photodegradation of organic pollutants were prepared by a simple hydrothermal method. The photocatalysts were characterized with X-ray powder diffractometry, transmission electron microscopy, ultraviolet–visible absorption spectroscopy, X-ray photoelectron spectroscopy, measurement of total organic carbon, and electron paramagnetic resonance spectrometry. The photocatalysts were evaluated by methyl orange (MO) photodegradation experiments under visible light irradiation (λ > 420 nm). Comparative analysis showed the optimal doping dosage was 0.05 mol/L Ni{sup 2+}. The optimal Ni{sup 2+}-Ag{sub 3}PO{sub 4} has an MO photodegradation rate constant four times larger than pure Ag{sub 3}PO{sub 4}. The photocatalytic ratio of 40 mg/L MO over the optimal Ni{sup 2+}-Ag{sub 3}PO{sub 4} after 10 min is 89%, which indicates excellent photocatalytic ability in high-concentration MO solutions. The Ni{sup 2+} doping into Ag{sub 3}PO{sub 4} can increase the level of band gap, and accelerate the utilization of photons and the separation of photo-generated charges. Therefore, the Ni{sup 2+} doping into Ag{sub 3}PO{sub 4} is responsible for the enhancement of photocatalytic ability. - Highlights: • Ni{sup 2+}-modified with higher photodegradation ability was synthesized. • ·OH radicals were the main active species in the oxidation of MO. • The doping of Ni{sup 2+} in Ag{sub 3}PO{sub 4} is responsible for the enhanced activity.

  4. Effect of W doping level on TiO2 on the photocatalytic degradation of Diuron.

    Science.gov (United States)

    Foura, Ghania; Soualah, Ahcène; Robert, Didier

    2017-01-01

    In the present study, three compositions of W-doped titania nano-photocatalyst are synthesized via the sol-gel method. The powders obtained were characterized by X-ray diffraction, Raman spectroscopy and UV-visible diffuse reflectance spectroscopy. The photocatalytic performances of the different photocatalysts are tested with respect to the degradation of Diuron in water solutions under simulated solar light and visible light irradiation. The W 0.03 Ti 0.97 O 2 catalyst exhibits better photoactivity than the pure TiO 2 even under simulated solar light and visible light. This improvement in activity was attributed to photoelectron/hole separation efficiency.

  5. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  6. Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

    Science.gov (United States)

    Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

    2018-03-01

    Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

  7. High field magnetic behavior in Boron doped Fe{sub 2}VAl Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, Ch., E-mail: venkyphysicsiitm@gmail.com [Department of Physics, Indian Institute of Technology, Kharagpur (India); DCMP & MS, Tata Institute of Fundamental Research, Mumbai (India); Vasundhara, M., E-mail: vasu.mutta@gmail.com [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR, Trivandrum 695019 (India); Srinivas, V. [Department of Physics, Indian Institute of Technology, Chennai (India); Rao, V.V. [Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur (India)

    2016-11-15

    We have investigated the magnetic behavior of Fe{sub 2}VAl{sub 1−x}B{sub x} (x=0, 0.03, 0.06 and 0.1) alloys under high temperature and high magnetic field conditions separately. Although, the low temperature DC magnetization data for the alloys above x>0 show clear magnetic transitions, the zero field cooled (ZFC) and field cooled (FC) curves indicate the presence of spin cluster like features. Further, critical exponent (γ) deduced from the initial susceptibility above the T{sub c}, does not agree with standard models derived for 3 dimensional long range magnetic systems. The deviation in γ values are consistent with the short range magnetic nature of these alloys. We further extend the analysis of magnetic behavior by carrying the magnetization measurements at high temperatures and high magnetic fields distinctly. We mainly emphasize the following observations; (i) The magnetic hysteresis loops show sharp upturns at lower fields even at 900 K for all the alloys. (ii) High temperature inverse susceptibility do not overlap until T=900 K, indicating the persistent short range magnetic correlations even at high temperatures. (iii) The Arrott's plot of magnetization data shows spontaneous moment (M{sub S}) for the x=0 alloy at higher magnetic fields which is absent at lower fields (<50 kOe), while the Boron doped samples show feeble M{sub S} at lower fields. The origin of this short range correlation is due to presence of dilute magnetic heterogeneous phases which are not detected from the X-ray diffraction method. - Highlights: • Short range magnetic character has been confirmed by the critical exponents analysis. • Magnetoresistace is about −14% with non-saturating tendency even at 150 kOe for Fe{sub 2}VAl alloy. • Boron doped Fe{sub 2}VAl alloys show a weak magnetism even at T=900 K.

  8. Spatial correlation effects in the charged impurity distribution on the electronic properties of δ-doped structures

    NARCIS (Netherlands)

    Stadt, van de A.F.W.; Koenraad, P.M.; Shi, J.M.; Wolter, J.H.; Devreese, J.T.

    2003-01-01

    In this paper we will show that the -doped GaAs/AlGaAs/GaAs quantum barrier is an ideal system to study deep centers in narrow doping layers with high doping density. By varying the Al content in the barrier, the distance between the Fermi-level and the deep level can be tuned and therefore the

  9. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  10. Quantum effect on the energy levels of Eu2+ doped K2Ca2(SO4)3 nanoparticles.

    Science.gov (United States)

    Salah, Numan; Habib, Sami S; Khan, Zishan H

    2010-09-01

    Quantum confinement effect on the energy levels of Eu(2+) doped K(2)Ca(2)(SO(4))(3) nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu(2+) doped K(2)Ca(2)(SO(4))(3) microcrystalline sample observed at ∼436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f(6)5d energy level of Eu(2+). Energy band gap values of the micro and nanocrystalline K(2)Ca(2)(SO(4))(3) samples were also determined by measuring the UV-visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.

  11. The management of high-level radioactive wastes

    International Nuclear Information System (INIS)

    Lennemann, Wm.L.

    1979-01-01

    The definition of high-level radioactive wastes is given. The following aspects of high-level radioactive wastes' management are discussed: fuel reprocessing and high-level waste; storage of high-level liquid waste; solidification of high-level waste; interim storage of solidified high-level waste; disposal of high-level waste; disposal of irradiated fuel elements as a waste

  12. Effect of Au nano-particles doping on polycrystalline YBCO high temperature superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Dadras, Sedigheh, E-mail: dadras@alzahra.ac.ir; Gharehgazloo, Zahra

    2016-07-01

    In this research, we prepared different Au nanoparticles (0.1–2 wt%) doped YBCO high temperature superconductor samples by sol-gel method. To characterize the samples, we used X-Ray diffraction (XRD) and scanning electron microscope (SEM) analysis. Results show the formation of orthorhombic phase of superconductivity for all prepared samples. We observed that by adding Au nanoparticles, the grains' size of the samples reduces from 76 nm to 47 nm as well. The critical current density (J{sub c}) and transition temperature (T{sub c}) were determined using current versus voltage (I–V) and resistivity versus temperature (ρ-T) measurements, respectively. We found that by increasing Au nanoparticles in the compound, in comparison to the pure YBCO sample, the transition temperature, pinning energy and critical current density will increase. Also, the highest J{sub c} is for 1 wt% Au doped YBCO compound that its critical current density is about 8 times more than the J{sub c} of pure one in 0.7 T magnetic field.

  13. Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

    KAUST Repository

    Noriega, Rodrigo; Rivnay, Jonathan; Goris, Ludwig; Kälblein, Daniel; Klauk, Hagen; Kern, Klaus; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Jokisaari, Jacob R.; Kusinski, Greg; Salleo, Alberto

    2010-01-01

    The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

  14. High-temperature conversion of methane on a composite gadolinia-doped ceria-gold electrode

    DEFF Research Database (Denmark)

    Marina, O.A.; Mogensen, Mogens Bjerg

    1999-01-01

    Direct electrochemical oxidation of methane was attempted on a gadolinia-doped ceria Ce(0.6)Gd(0.4)O(1.8) (CG4) electrode in a solid oxide fuel cell using a porous gold-CG4 mixture as current collector Gold is relatively inert to methane in contrast to other popular SOFC anode materials such as n......Direct electrochemical oxidation of methane was attempted on a gadolinia-doped ceria Ce(0.6)Gd(0.4)O(1.8) (CG4) electrode in a solid oxide fuel cell using a porous gold-CG4 mixture as current collector Gold is relatively inert to methane in contrast to other popular SOFC anode materials...... such as nickel and platinum. CG4 was found to exhibit a low electrocatalytic activity for methane oxidation as well as no significant reforming activity implying that the addition of an electrocatalyst or cracking catalyst to the CG4 anode is required for SOFC operating on methane. The methane conversion...... observed at the open-circuit potential and low anodic overpotentials seems to be due to thermal methane cracking in the gas phase and on the alumina surfaces in the cell housing. At high anodic overpotentials, at electrode potentials where oxygen evolution was expected to take place, the formation of CO(2...

  15. Lowering the platinum loading of high temperature polymer electrolyte membrane fuel cells with acid doped polybenzimidazole membranes

    DEFF Research Database (Denmark)

    Fernandez, Santiago Martin; Li, Qingfeng; Jensen, Jens Oluf

    2015-01-01

    Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer was establ......Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer...

  16. High-level radioactive wastes. Supplement 1

    International Nuclear Information System (INIS)

    McLaren, L.H.

    1984-09-01

    This bibliography contains information on high-level radioactive wastes included in the Department of Energy's Energy Data Base from August 1982 through December 1983. These citations are to research reports, journal articles, books, patents, theses, and conference papers from worldwide sources. Five indexes, each preceded by a brief description, are provided: Corporate Author, Personal Author, Subject, Contract Number, and Report Number. 1452 citations

  17. PAIRWISE BLENDING OF HIGH LEVEL WASTE

    International Nuclear Information System (INIS)

    CERTA, P.J.

    2006-01-01

    The primary objective of this study is to demonstrate a mission scenario that uses pairwise and incidental blending of high level waste (HLW) to reduce the total mass of HLW glass. Secondary objectives include understanding how recent refinements to the tank waste inventory and solubility assumptions affect the mass of HLW glass and how logistical constraints may affect the efficacy of HLW blending

  18. Materials for high-level waste containment

    International Nuclear Information System (INIS)

    Marsh, G.P.

    1982-01-01

    The function of the high-level radioactive waste container in storage and of a container/overpack combination in disposal is considered. The consequent properties required from potential fabrication materials are discussed. The strategy adopted in selecting containment materials and the experimental programme underway to evaluate them are described. (U.K.)

  19. Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

    Directory of Open Access Journals (Sweden)

    Chao Yan

    2017-01-01

    Full Text Available Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

  20. Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

    1987-01-01

    Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

  1. Improved high-rate charge/discharge performances of LiFePO{sub 4}/C via V-doping

    Energy Technology Data Exchange (ETDEWEB)

    Sun, C.S.; Zhou, Z.; Xu, Z.G.; Wang, D.G.; Wei, J.P.; Bian, X.K.; Yan, J. [Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071 (China)

    2009-09-05

    V-doped LiFePO{sub 4}/C cathode materials were prepared through a carbothermal reduction route. The microstructure was characterized by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrochemical Li{sup +} intercalation performances of V-doped LiFePO{sub 4}/C were compared with those of undoped one through galvanostatic intermittent titration technique, cyclic voltamperometry, and electrochemical impedance spectrum. V-doped LiFePO{sub 4}/C showed a high discharge capacity of {proportional_to}70 mAh g{sup -1} at the rate of 20 C (3400 mA g{sup -1}) at room temperature. The significantly improved high-rate charge/discharge capacity is attributed to the increase of Li{sup +} ion ''effective'' diffusion capability. (author)

  2. Three-Dimensional Porous Nitrogen-Doped NiO Nanostructures as Highly Sensitive NO2 Sensors

    Directory of Open Access Journals (Sweden)

    Van Hoang Luan

    2017-10-01

    Full Text Available Nickel oxide has been widely used in chemical sensing applications, because it has an excellent p-type semiconducting property with high chemical stability. Here, we present a novel technique of fabricating three-dimensional porous nitrogen-doped nickel oxide nanosheets as a highly sensitive NO2 sensor. The elaborate nanostructure was prepared by a simple and effective hydrothermal synthesis method. Subsequently, nitrogen doping was achieved by thermal treatment with ammonia gas. When the p-type dopant, i.e., nitrogen atoms, was introduced in the three-dimensional nanostructures, the nickel-oxide-nanosheet-based sensor showed considerable NO2 sensing ability with two-fold higher responsivity and sensitivity compared to non-doped nickel-oxide-based sensors.

  3. High spin levels in 151Ho

    International Nuclear Information System (INIS)

    Gizon, J.; Gizon, A.; Andre, S.; Genevey, J.; Jastrzebski, J.; Kossakowski, R.; Moszinski, M.; Preibisz, Z.

    1981-02-01

    We report here on the first study of the level structure of 151 Ho. High spin levels in 151 Ho have been populated in the 141 Pr + 16 O and 144 Sm + 12 C reactions. The level structure has been established up to 6.6 MeV energy and the spins and particles determined up to 49/2 - . Most of the proposed level configurations can be explained by the coupling of hsub(11/2) protons to fsub(7/2) and/or hsub(9/2) neutrons. An isomer with 14 +- 3 ns half-life and a delayed gamma multiplicity equal to 17 +- 2 has been found. Its spin is larger than 57/2 h units

  4. Disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Glasby, G.P.

    1977-01-01

    Although controversy surrounding the possible introduction of nuclear power into New Zealand has raised many points including radiation hazards, reactor safety, capital costs, sources of uranium and earthquake risks on the one hand versus energy conservation and alternative sources of energy on the other, one problem remains paramount and is of global significance - the storage and dumping of the high-level radioactive wastes of the reactor core. The generation of abundant supplies of energy now in return for the storage of these long-lived highly radioactive wastes has been dubbed the so-called Faustian bargain. This article discusses the growth of the nuclear industry and its implications to high-level waste disposal particularly in the deep-sea bed. (auth.)

  5. HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM-IRON GARNET (YIG)

    DEFF Research Database (Denmark)

    Epstein, D. J.; Tocci, L.

    1967-01-01

    The ferrimagnetic resonance linewidth of silicon-doped YIG, measured as a function of temperature at 13.4 kMHz, is found to show a pronounced peak at 105°C. The anisotropic behavior of this peak is in good agreement with the four-level valence-exchange model proposed by Clogston. The model yields...... for the electron ordering energy a value 5 × 10-4 eV which agrees closely with the energy deduced from magnetic anneal studies. The activation energy for electron transfer (0.25 eV) is virtually identical with values reported in investigations of electrical conductivity and acoustic loss. ©1967 The American...

  6. Nitrogen-doped two-dimensional porous carbon sheets derived from clover biomass for high performance supercapacitors

    Science.gov (United States)

    Wang, Cunjing; Wu, Dapeng; Wang, Hongju; Gao, Zhiyong; Xu, Fang; Jiang, Kai

    2017-09-01

    Highly porous carbon sheets were prepared from fresh clover stems under air atmosphere via a facile potassium chloride salt-sealing technique, which not only avoids using the high cost inert gas protection but also spontaneously introduce multi-level porosity into the carbon structure taking advantage of the trace of oxygen in the molten salt system. The as-obtained porous carbon sheets possess high specific surface area of 2244 m2 g-1 and interconnected hierarchical pore structures from micro-to macro-scale, which provide abundant storage active sites and fast ion diffusion channels. In addition, the spontaneously formed N (2.55 at%) and O (6.94 at%) doping sites not only improve the electron conductivity of the electrode but also enhance the specific capacitance by introducing pseudocapacitance. When employed as supercapacitor electrodes, a high specific capacitance of 436 F g-1 at 1 A g-1 and an excellent rate capacity with capacitance remaining 290 F g-1 at 50 A g-1 are demonstrated. Furthermore, the assembled symmetric supercapacitor delivers a high specific capacitance of 420 F g-1 at 0.5 A g-1, excellent energy density of 58.4 Wh kg-1 and good cycling stability which retains 99.4% of the initial capacitance at 5 A g-1 after 30,000 cycles.

  7. Detection of trace levels of Pb2+ in tap water at boron-doped diamond electrodes with anodic stripping voltammetry

    International Nuclear Information System (INIS)

    Dragoe, Diana; Spataru, Nicolae; Kawasaki, Ryuji; Manivannan, Ayyakkannu; Spataru, Tanta; Tryk, Donald A.; Fujishima, Akira

    2006-01-01

    Boron-doped diamond (BDD) electrodes were used to investigate the possibility of detecting trace levels of lead by linear-sweep anodic stripping voltammetry. The low limit of detection (2 nM) is an advantage compared to other electrode materials, and it was found that at low pH values, copper concentrations that are usually present in drinking water do not affect to a large extent the detection of lead. These findings recommend anodic stripping voltammetry at the BDD electrodes as a suitable mercury-free method for the determination of trace levels of lead in drinking water. The results obtained for the lead detection in tap water real samples are in excellent agreement with those found by inductively coupled plasma-mass spectrometry (ICP-MS), demonstrating the practical analytical utility of the method

  8. Mg doping induced high structural quality of sol–gel ZnO nanocrystals: Application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Abed, Chayma; Bouzidi, Chaker [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Elhouichet, Habib, E-mail: Habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Tunis 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Ferid, Mokhtar [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia)

    2015-09-15

    Highlights: • ZnO nancrystals doped with Mg were prepared from sol–gel method. • Structural and optical properties of ZnO:Mg nanocrystals were investigated. • Good crystalline quality of ZnO nanocrystals was reported after Mg doping. • Good photocatalytic activity of Mg doped ZnO nanocrystals was demonstrated under sun light illumination. - Abstract: Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol–gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy, diffuse reflectivity, and photoluminescence (PL). XRD analysis demonstrates that all prepared samples present pure hexagonal wurtzite structure without any Mg related phases. The NCs size varies from 26.82 nm to 42.96 nm with Mg concentrations; it presents an optimal value for 2% of Mg. The Raman spectra are dominated by the E{sub 2high} mode. For highly Mg doping (5%), the occurrence of silent B{sub 1(low)} mode suggested that the Mg ions do substitute at Zn sites in the ZnO lattice The band gap energy was estimated from both Tauc and Urbach methods and found to be 3.39 eV for ZnO:2%Mg. The PL spectra exhibit two emission bands in the UV and visible range. Their evolution with Mg doping reveals the reduction of defect density in ZnO at low Mg doping by filling Zn vacancies. In addition, it was found that further Mg doping, above 2%, improves the photocatalytic activity of ZnO NCs for photodegradation of Rhodamine B (RhB) under sunlight irradiation. The efficient electron–hole separation is the main factor responsible for the enhancement of photocatalytic performance of Mg doped ZnO NCs. Through this work, we show that by varying the Mg contents in ZnO, this material can be a potential candidate for both optoelectronic and photocatalytic applications.

  9. Python based high-level synthesis compiler

    Science.gov (United States)

    Cieszewski, Radosław; Pozniak, Krzysztof; Romaniuk, Ryszard

    2014-11-01

    This paper presents a python based High-Level synthesis (HLS) compiler. The compiler interprets an algorithmic description of a desired behavior written in Python and map it to VHDL. FPGA combines many benefits of both software and ASIC implementations. Like software, the mapped circuit is flexible, and can be reconfigured over the lifetime of the system. FPGAs therefore have the potential to achieve far greater performance than software as a result of bypassing the fetch-decode-execute operations of traditional processors, and possibly exploiting a greater level of parallelism. Creating parallel programs implemented in FPGAs is not trivial. This article describes design, implementation and first results of created Python based compiler.

  10. The CMS High-Level Trigger

    International Nuclear Information System (INIS)

    Covarelli, R.

    2009-01-01

    At the startup of the LHC, the CMS data acquisition is expected to be able to sustain an event readout rate of up to 100 kHz from the Level-1 trigger. These events will be read into a large processor farm which will run the 'High-Level Trigger'(HLT) selection algorithms and will output a rate of about 150 Hz for permanent data storage. In this report HLT performances are shown for selections based on muons, electrons, photons, jets, missing transverse energy, τ leptons and b quarks: expected efficiencies, background rates and CPU time consumption are reported as well as relaxation criteria foreseen for a LHC startup instantaneous luminosity.

  11. The CMS High-Level Trigger

    CERN Document Server

    Covarelli, Roberto

    2009-01-01

    At the startup of the LHC, the CMS data acquisition is expected to be able to sustain an event readout rate of up to 100 kHz from the Level-1 trigger. These events will be read into a large processor farm which will run the "High-Level Trigger" (HLT) selection algorithms and will output a rate of about 150 Hz for permanent data storage. In this report HLT performances are shown for selections based on muons, electrons, photons, jets, missing transverse energy, tau leptons and b quarks: expected efficiencies, background rates and CPU time consumption are reported as well as relaxation criteria foreseen for a LHC startup instantaneous luminosity.

  12. The CMS High-Level Trigger

    Science.gov (United States)

    Covarelli, R.

    2009-12-01

    At the startup of the LHC, the CMS data acquisition is expected to be able to sustain an event readout rate of up to 100 kHz from the Level-1 trigger. These events will be read into a large processor farm which will run the "High-Level Trigger" (HLT) selection algorithms and will output a rate of about 150 Hz for permanent data storage. In this report HLT performances are shown for selections based on muons, electrons, photons, jets, missing transverse energy, τ leptons and b quarks: expected efficiencies, background rates and CPU time consumption are reported as well as relaxation criteria foreseen for a LHC startup instantaneous luminosity.

  13. High-level waste processing and disposal

    International Nuclear Information System (INIS)

    Crandall, J.L.; Krause, H.; Sombret, C.; Uematsu, K.

    1984-01-01

    The national high-level waste disposal plans for France, the Federal Republic of Germany, Japan, and the United States are covered. Three conclusions are reached. The first conclusion is that an excellent technology already exists for high-level waste disposal. With appropriate packaging, spent fuel seems to be an acceptable waste form. Borosilicate glass reprocessing waste forms are well understood, in production in France, and scheduled for production in the next few years in a number of other countries. For final disposal, a number of candidate geological repository sites have been identified and several demonstration sites opened. The second conclusion is that adequate financing and a legal basis for waste disposal are in place in most countries. Costs of high-level waste disposal will probably add about 5 to 10% to the costs of nuclear electric power. The third conclusion is less optimistic. Political problems remain formidable in highly conservative regulations, in qualifying a final disposal site, and in securing acceptable transport routes

  14. Effective Approach for Increasing the Heteroatom Doping Levels of Porous Carbons for Superior CO2 Capture and Separation Performance.

    Science.gov (United States)

    Abdelmoaty, Yomna H; Tessema, Tsemre-Dingel; Norouzi, Nazgol; El-Kadri, Oussama M; Turner, Joseph B McGee; El-Kaderi, Hani M

    2017-10-18

    Development of efficient sorbents for carbon dioxide (CO 2 ) capture from flue gas or its removal from natural gas and landfill gas is very important for environmental protection. A new series of heteroatom-doped porous carbon was synthesized directly from pyrazole/KOH by thermolysis. The resulting pyrazole-derived carbons (PYDCs) are highly doped with nitrogen (14.9-15.5 wt %) as a result of the high nitrogen-to-carbon ratio in pyrazole (43 wt %) and also have a high oxygen content (16.4-18.4 wt %). PYDCs have a high surface area (SA BET = 1266-2013 m 2 g -1 ), high CO 2 Q st (33.2-37.1 kJ mol -1 ), and a combination of mesoporous and microporous pores. PYDCs exhibit significantly high CO 2 uptakes that reach 2.15 and 6.06 mmol g -1 at 0.15 and 1 bar, respectively, at 298 K. At 273 K, the CO 2 uptake improves to 3.7 and 8.59 mmol g -1 at 0.15 and 1 bar, respectively. The reported porous carbons also show significantly high adsorption selectivity for CO 2 /N 2 (128) and CO 2 /CH 4 (13.4) according to ideal adsorbed solution theory calculations at 298 K. Gas breakthrough studies of CO 2 /N 2 (10:90) at 298 K showed that PYDCs display excellent separation properties. The ability to tailor the physical properties of PYDCs as well as their chemical composition provides an effective strategy for designing efficient CO 2 sorbents.

  15. Nitrogen-doped graphene forests as electrodes for high-performance wearable supercapacitors

    International Nuclear Information System (INIS)

    Wang, Mei; Ma, Yifei

    2017-01-01

    Highlights: •N-doped graphene forest (GF) is successfully synthesized by in-situ PECVD process. •Morphology of N-doped GF electrode realizes a better in-plane electron transfer. •Areal and volumetric capacitances increase 26% and 89% by the N-doping of GF. •Energy and power densities increase 87% and 50% by the N-doping of GF. •The N-doped GF-based EDLC shows excellent bendability and reliable durability. -- Abstract: Recently, a graphene forest (GF) is synthesized by a plasma enhanced chemical vapor deposition (PECVD) process, which subverts the stereotyped morphology of vertical graphene. The GF is demonstrated to possess excellent performance in flexible and bendable electrical double-layer capacitors (EDLCs). In this work, synthesis process of the GF has been optimized and N-doped GF is successfully achieved by introducing NH 3 as the nitrogen precursor during the PECVD process. The N-doping obviously affects the morphology of the GF and the in-plane conductivity of GF is desirably enhanced. The specific area capacitances and volumetric capacitances of N-doped GF-based EDLC increases 26% and 89% in average, respectively, at different current densities compared with the non-doped GF-based EDLC. In addition, both the energy and power densities are improved, and impressively, the energy densities improve 87% by the N-doping of GF electrodes. The GF-based EDLC also provides the desirable stability that no degradation can be observed within 10,000 cycles. Finally, the flexible N-doped GF-based EDLC is also tested as a wearable supercapacitor, exhibiting no capacitance decrease under the dynamic bending situation. Our approach to synthesize the N-doped GF electrodes can achieve the fine-scale nano-structured GF electrodes and provide a new way forward for improved energy storage devices.

  16. Novel high resolution 125I brachytherapy source dosimetry using Ge-doped optical fibres

    International Nuclear Information System (INIS)

    Issa, Fatma; Hugtenburg, Richard P.; Nisbet, Andrew; Bradley, David A.

    2013-01-01

    The steep dose gradients close to brachytherapy sources limit the ability to obtain accurate measurements of dose. Here we use a novel high spatial resolution dosimeter to measure dose around a 125 I source and compare against simulations. Ge-doped optical fibres, used as thermoluminescent dosimeters, offer sub-mm spatial resolution, linear response from 10 cGy to >1 kGy and dose-rate independence. For a 125 I brachytherapy seed in a PMMA phantom, doses were obtained for source-dosimeter separations from 0.1 cm up to several cm, supported by EGSnrc/DOSRZznrc Monte Carlo simulations and treatment planning system data. The measurements agree with simulations to within 2.3%±0.3% along the transverse and perpendicular axes and within 3.0%±0.5% for measurements investigating anisotropy in angular dose distribution. Measured and Veriseed™ brachytherapy treatment planning system (TPS) values agreed to within 2.7%±0.5%. Ge-doped optical fibre dosimeters allow detailed dose mapping around brachytherapy sources, not least in situations of high dose gradient. - Highlights: • We evaluate fall-off in dose for distances from an 125 I source of 1 mm to 60 mm. • The TL of optical fibres accommodate high dose gradients and doses that reduce by a factor of 10 3 across the range of separations. • We verify measured values using DOSRZnrc Monte Carlo code simulations and the Variseed™ Treatment Planning System. • Measured radial and angular dose are obtained with ≤3% uncertainty

  17. DUACS: Toward High Resolution Sea Level Products

    Science.gov (United States)

    Faugere, Y.; Gerald, D.; Ubelmann, C.; Claire, D.; Pujol, M. I.; Antoine, D.; Desjonqueres, J. D.; Picot, N.

    2016-12-01

    The DUACS system produces, as part of the CNES/SALP project, and the Copernicus Marine Environment and Monitoring Service, high quality multimission altimetry Sea Level products for oceanographic applications, climate forecasting centers, geophysic and biology communities... These products consist in directly usable and easy to manipulate Level 3 (along-track cross-calibrated SLA) and Level 4 products (multiple sensors merged as maps or time series) and are available in global and regional version (Mediterranean Sea, Arctic, European Shelves …).The quality of the products is today limited by the altimeter technology "Low Resolution Mode" (LRM), and the lack of available observations. The launch of 2 new satellites in 2016, Jason-3 and Sentinel-3A, opens new perspectives. Using the global Synthetic Aperture Radar mode (SARM) coverage of S3A and optimizing the LRM altimeter processing (retracking, editing, ...) will allow us to fully exploit the fine-scale content of the altimetric missions. Thanks to this increase of real time altimetry observations we will also be able to improve Level-4 products by combining these new Level-3 products and new mapping methodology, such as dynamic interpolation. Finally these improvements will benefit to downstream products : geostrophic currents, Lagrangian products, eddy atlas… Overcoming all these challenges will provide major upgrades of Sea Level products to better fulfill user needs.

  18. Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-01-01

    Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

  19. Cermets for high level waste containment

    International Nuclear Information System (INIS)

    Aaron, W.S.; Quinby, T.C.; Kobisk, E.H.

    1978-01-01

    Cermet materials are currently under investigation as an alternate for the primary containment of high level wastes. The cermet in this study is an iron--nickel base metal matrix containing uniformly dispersed, micron-size fission product oxides, aluminosilicates, and titanates. Cermets possess high thermal conductivity, and typical waste loading of 70 wt % with volume reduction factors of 2 to 200 and low processing volatility losses have been realized. Preliminary leach studies indicate a leach resistance comparable to other candidate waste forms; however, more quantitative data are required. Actual waste studies have begun on NFS Acid Thorex, SRP dried sludge and fresh, unneutralized SRP process wastes

  20. Timing of High-level Waste Disposal

    International Nuclear Information System (INIS)

    2008-01-01

    This study identifies key factors influencing the timing of high-level waste (HLW) disposal and examines how social acceptability, technical soundness, environmental responsibility and economic feasibility impact on national strategies for HLW management and disposal. Based on case study analyses, it also presents the strategic approaches adopted in a number of national policies to address public concerns and civil society requirements regarding long-term stewardship of high-level radioactive waste. The findings and conclusions of the study confirm the importance of informing all stakeholders and involving them in the decision-making process in order to implement HLW disposal strategies successfully. This study will be of considerable interest to nuclear energy policy makers and analysts as well as to experts in the area of radioactive waste management and disposal. (author)

  1. High-Level Waste Melter Study Report

    Energy Technology Data Exchange (ETDEWEB)

    Perez, Joseph M.; Bickford, Dennis F.; Day, Delbert E.; Kim, Dong-Sang; Lambert, Steven L.; Marra, Sharon L.; Peeler, David K.; Strachan, Denis M.; Triplett, Mark B.; Vienna, John D.; Wittman, Richard S.

    2001-07-13

    At the Hanford Site in Richland, Washington, the path to site cleanup involves vitrification of the majority of the wastes that currently reside in large underground tanks. A Joule-heated glass melter is the equipment of choice for vitrifying the high-level fraction of these wastes. Even though this technology has general national and international acceptance, opportunities may exist to improve or change the technology to reduce the enormous cost of accomplishing the mission of site cleanup. Consequently, the U.S. Department of Energy requested the staff of the Tanks Focus Area to review immobilization technologies, waste forms, and modifications to requirements for solidification of the high-level waste fraction at Hanford to determine what aspects could affect cost reductions with reasonable long-term risk. The results of this study are summarized in this report.

  2. A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

    International Nuclear Information System (INIS)

    Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

    2014-01-01

    A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

  3. High-level radioactive wastes. Supplement 1

    Energy Technology Data Exchange (ETDEWEB)

    McLaren, L.H. (ed.)

    1984-09-01

    This bibliography contains information on high-level radioactive wastes included in the Department of Energy's Energy Data Base from August 1982 through December 1983. These citations are to research reports, journal articles, books, patents, theses, and conference papers from worldwide sources. Five indexes, each preceded by a brief description, are provided: Corporate Author, Personal Author, Subject, Contract Number, and Report Number. 1452 citations.

  4. Decommissioning high-level waste surface facilities

    International Nuclear Information System (INIS)

    1978-04-01

    The protective storage, entombment and dismantlement options of decommissioning a High-Level Waste Surface Facility (HLWSF) was investigated. A reference conceptual design for the facility was developed based on the designs of similar facilities. State-of-the-art decommissioning technologies were identified. Program plans and cost estimates for decommissioning the reference conceptual designs were developed. Good engineering design concepts were on the basis of this work identified

  5. Dependence of critical current properties on growth temperature and doping level of nanorods in PLD-YBa2Cu3Oy films

    International Nuclear Information System (INIS)

    Fujita, N.; Haruta, M.; Ichinose, A.; Maeda, T.; Horii, S.

    2013-01-01

    Highlights: •We fabricated Y123 films with Ba–Nb–O nanorods at various growth temperatures. •Irreversibility lines depended on growth temperature and doping level of Ba–Nb–O. •Nanorod morphology was drastically changed by growth temperature (T s ). •Its T s dependence of the matching field was different from that for Er123 + Ba–Nb–O. -- Abstract: The vortex-Bose-glass-like irreversibility lines (ILs) emerged for 2.5 and 5.0 at.% Ba–Nb–O (BNO)-doped YBa 2 Cu 3 O y films deposited by PLD using Nd:YAG-laser. The ILs strongly depended on growth temperature (T s ) in addition to the doping level of BNO. The vortex glass region was expanded with increasing T s or doping level of BNO. Drastic change of the nanorod morphology from short and bended nanorods to long and linear nanorods with increasing T s was clarified. Moreover, it was found that T s -dependent ILs were quite different from our previous results in BNO-doped ErBa 2 Cu 3 O y films

  6. Effect of fabrication parameters on morphological and optical properties of highly doped p-porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Maryam, E-mail: mar.zare@gmail.com [Young Researchers Club, Khomeinishahr Branch, Islamic Azad University, Khomeinishahr (Iran, Islamic Republic of); Shokrollahi, Abbas [Young Researchers Club, Khomeinishahr Branch, Islamic Azad University, Khomeinishahr (Iran, Islamic Republic of); Seraji, Faramarz E. [Optical Communication Group, Iran Telecom Research Center, Tehran (Iran, Islamic Republic of)

    2011-09-01

    Porous silicon (PS) layers were fabricated by anodization of low resistive (highly doped) p-type silicon in HF/ethanol solution, by varying current density, etching time and HF concentration. Atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) analyses were used to investigate the physical properties and reflection spectrum was used to investigate the optical behavior of PS layers in different fabrication conditions. Vertically aligned mesoporous morphology is observed in fabricated films and with HF concentration higher than 20%. The dependence of porosity, layer thickness and rms roughness of the PS layer on current density, etching time and composition of electrolyte is also observed in obtained results. Correlation between reflectivity and fabrication parameters was also explored. Thermal oxidation was performed on some mesoporous layers that resulted in changes of surface roughness, mean height and reflectivity of the layers.

  7. High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

    KAUST Repository

    Sarath Kumar, S. R.

    2013-08-14

    We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

  8. Stability of uranium(VI) doped CSH phases in high saline water

    Energy Technology Data Exchange (ETDEWEB)

    Wolter, Jan-Martin; Schmeide, Katja [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Surface Processes

    2017-06-01

    To evaluate the long-term stability of U(VI) doped calcium silicate hydrate (CSH) phases at high saline conditions, leaching experiments with NaCl, NaCl/Na{sub 2}SO{sub 4} and NaCl/NaHCO{sub 3} containing solutions were performed. Time-resolved laser-induced fluorescence spectroscopy (TRLFS), infrared spectroscopy (IR) and X-ray powder diffraction (XRD) were applied to study the U(VI) binding onto the CSH phases and to get a deeper understanding of structural changes due to leaching. Results indicate that neither NaCl nor Na{sub 2}SO{sub 4} affect the structural stability of CSH phases and their retention potential for U(VI). However, carbonate containing solutions lead to a decomposition of CSH phases and thus, to a release of incorporated uranium.

  9. Superfluorescent highly doped neodymium materials as smooth sources for fusion lasers

    International Nuclear Information System (INIS)

    Husson, D.; Gouedard, C.; Sauteret, C.; Migus, A.; Auzel, F.

    1991-01-01

    Obtaining uniform laser energy deposition on target is one of the main issue in laser driven inertial confinement fusion. Efforts to directly generate laser smooth emission have been unsuccessful up to now. Therefore different methods of laser smoothing have been developed, consisting of tentatives to destroy the spatial and temporal coherence of the emission which are at the origin on the non-uniformity. We may however wonder whether a laser is really needed for this application. In this work we have developed mirrorless light generator based on highly concentrated Nd-doped crystals or powders pumped by laser. We obtain emission showing characteristics of coherence but still compatible with amplification in existing large Nd-glass installation

  10. High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

    KAUST Repository

    Sarath Kumar, S. R.; Barasheed, Abeer Z.; Alshareef, Husam N.

    2013-01-01

    We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

  11. Catalyst Degradation in High Temperature Proton Exchange Membrane Fuel Cells Based on Acid Doped Polybenzimidazole Membranes

    DEFF Research Database (Denmark)

    Cleemann, Lars Nilausen; Buazar, F.; Li, Qingfeng

    2013-01-01

    and multi‐walled carbon nanotubes were used as supports for electrode catalysts and evaluated in accelerated durability tests under potential cycling at 150 °C. Measurements of open circuit voltage, area specific resistance and hydrogen permeation through the membrane were carried out, indicating little...... contribution of the membrane degradation to the performance losses during the potential cycling tests. As the major mechanism of the fuel cell performance degradation, the electrochemical active area of the cathodic catalysts showed a steady decrease in the cyclic voltammetric measurements, which was also......Degradation of carbon supported platinum catalysts is a major failure mode for the long term durability of high temperature proton exchange membrane fuel cells based on phosphoric acid doped polybenzimidazole membranes. With Vulcan carbon black as a reference, thermally treated carbon black...

  12. High Power Tm3+-Doped Fiber Lasers Tuned by a Variable Reflective Output Coupler

    Directory of Open Access Journals (Sweden)

    Yulong Tang

    2008-01-01

    Full Text Available Wide wavelength tuning by a variable reflective output coupler is demonstrated in high-power double-clad Tm3+-doped silica fiber lasers diode-pumped at ∼790  nm. Varying the output coupling from 96% to 5%, the laser wavelength is tuned over a range of 106  nm from 1949 to 2055  nm. The output power exceeds 20  W over 90-nm range and the maximum output power is 32  W at 1949  nm for 51-W launched pump power, corresponding to a slope efficiency of ∼70%. Assisted with different fiber lengths, the tuning range is expanded to 240  nm from 1866 to 2107  nm with the output power larger than 10  W.

  13. High pressure in-situ X-ray diffraction study on Zn-doped magnetite nanoparticles

    Science.gov (United States)

    Ferrari, S.; Bilovol, V.; Pampillo, L. G.; Grinblat, F.; Errandonea, D.

    2018-03-01

    We have performed high pressure synchrotron X-ray powder diffraction experiments on two different samples of Zn-doped magnetite nanoparticles (formula Fe(3-x)ZnxO4; x = 0.2, 0.5). The structural behavior of then a noparticles was studied up to 13.5 GPa for x = 0.2, and up to 17.4 GPa for x = 0.5. We have found that both systems remain in the cubic spinel structure as expected for this range of applied pressures. The analysis of the unit cell volume vs. pressure results in bulk modulus values lower than in both end-members, magnetite (Fe3O4) and zinc ferrite (ZnFe2O4), suggesting that chemical disorder may favor compressibility, which is expected to improve the increase of the Neel temperature under compression.

  14. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  15. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  16. The ALICE Dimuon Spectrometer High Level Trigger

    CERN Document Server

    Becker, B; Cicalo, Corrado; Das, Indranil; de Vaux, Gareth; Fearick, Roger; Lindenstruth, Volker; Marras, Davide; Sanyal, Abhijit; Siddhanta, Sabyasachi; Staley, Florent; Steinbeck, Timm; Szostak, Artur; Usai, Gianluca; Vilakazi, Zeblon

    2009-01-01

    The ALICE Dimuon Spectrometer High Level Trigger (dHLT) is an on-line processing stage whose primary function is to select interesting events that contain distinct physics signals from heavy resonance decays such as J/psi and Gamma particles, amidst unwanted background events. It forms part of the High Level Trigger of the ALICE experiment, whose goal is to reduce the large data rate of about 25 GB/s from the ALICE detectors by an order of magnitude, without loosing interesting physics events. The dHLT has been implemented as a software trigger within a high performance and fault tolerant data transportation framework, which is run on a large cluster of commodity compute nodes. To reach the required processing speeds, the system is built as a concurrent system with a hierarchy of processing steps. The main algorithms perform partial event reconstruction, starting with hit reconstruction on the level of the raw data received from the spectrometer. Then a tracking algorithm finds track candidates from the recon...

  17. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  18. Absorption Spectroscopy Analysis of Calcium-Phosphate Glasses Highly Doped with Monovalent Copper.

    Science.gov (United States)

    Jiménez, José A

    2016-06-03

    CaO-P2 O5 glasses with high concentrations of monovalent copper ions were prepared by a simple melt-quench method through CuO and SnO co-doping. Spectroscopic characterization was carried out by optical absorption with the aim of analyzing the effects of Cu(+) ions on the optical band-gap energies, which were estimated on the basis of indirect-allowed transitions. The copper(I) content is estimated in the CuO/SnO-containing glasses after the assessment of the concentration dependence of Cu(2+) absorption in the visible region for CuO singly doped glasses. An exponential dependence of the change in optical band gaps (relative to the host) with Cu(+) concentration is inferred up to about 10 mol %. However, the entire range is divided into two distinct linear regions that are characterized by different rates of change with respect to concentration: 1) below 5 mol %, where the linear dependence presents a relatively high magnitude of the slope; and 2) from 5-10 mol %, where a lower magnitude of the slope is manifested. With increasing concentration, the mean Cu(+) -Cu(+) interionic distance decreases, thereby decreasing the sensitivity of monovalent copper for light absorption. The decrease in optical band-gap energies is ultimately shown to follow a linear dependence with the interionic distance, suggesting the potential of the approach to gauge the concentration of monovalent copper straightforwardly in amorphous hosts. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Performance of the CMS High Level Trigger

    CERN Document Server

    Perrotta, Andrea

    2015-01-01

    The CMS experiment has been designed with a 2-level trigger system. The first level is implemented using custom-designed electronics. The second level is the so-called High Level Trigger (HLT), a streamlined version of the CMS offline reconstruction software running on a computer farm. For Run II of the Large Hadron Collider, the increases in center-of-mass energy and luminosity will raise the event rate to a level challenging for the HLT algorithms. The increase in the number of interactions per bunch crossing, on average 25 in 2012, and expected to be around 40 in Run II, will be an additional complication. We present here the expected performance of the main triggers that will be used during the 2015 data taking campaign, paying particular attention to the new approaches that have been developed to cope with the challenges of the new run. This includes improvements in HLT electron and photon reconstruction as well as better performing muon triggers. We will also present the performance of the improved trac...

  20. Investigation on compression behavior of TZM and La{sub 2}O{sub 3} doped TZM Alloys at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Ping, E-mail: huping1985@126.com [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Zhou, Yuhang; Chang, Tian; Yu, Zhitao; Wang, Kuaishe; Yang, Fan; Hu, Boliang [School of Metallurgy Engineering, Xi’an University of Architecture and Technology, Xi’an 710055 (China); Cao, Weicheng [Jinduicheng Molybdenum Co., Ltd, Xi’an 710077 (China); Yu, Hailiang [School of Mechanical, Materials, Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2500 (Australia)

    2017-02-27

    Mechanical properties of Titanium-zirconium-molybdenum (TZM) and La{sub 2}O{sub 3} doped TZM alloys under compression were tested at 1000 °C and 1200 °C. Microstructure of TZM and La{sub 2}O{sub 3} doped TZM alloys after compressing was characterized by scanning electron microscopy. The effects on La{sub 2}O{sub 3} doping on the high temperature deformation behavior and microstructure evolution of the TZM alloy were analyzed. Results show that La{sub 2}O{sub 3} doping can refine the grain size of TZM alloy. La{sub 2}O{sub 3} doping changes fracture model of TZM alloy. TZM alloy exhibits mainly intergranular fracture, while the La{sub 2}O{sub 3} doped TZM alloy exhibits both intergranular and transgranular fracture mode.

  1. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  2. Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Menéndez-Proupin, Eduardo [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa, Santiago (Chile); Palacios, Pablo, E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FAIAN, E.T.S.I. Aeronáutica y del Espacio, UPM, Pz. Cardenal Cisneros 3, 28040 Madrid (Spain); Wahnón, Perla [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TFO, E.T.S.I. Telecomunicación, UPM, Ciudad Universitaria, 28040 Madrid (Spain)

    2015-06-15

    Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al{sub i}, and complexes Ga{sub Zn}-O{sub i}, and Al{sub Zn}-O{sub i}.

  3. SnO2 nanocrystals anchored on N-doped graphene for high-performance lithium storage.

    Science.gov (United States)

    Zhou, Wei; Wang, Jinxian; Zhang, Feifei; Liu, Shumin; Wang, Jianwei; Yin, Dongming; Wang, Limin

    2015-02-28

    A SnO2-N-doped graphene (SnO2-NG) composite is synthesized by a rapid, facile, one-step microwave-assisted solvothermal method. The composite exhibits excellent lithium storage capability and high durability, and is a promising anode material for lithium ion batteries.

  4. High-Quality Fe-doped TiO2 films with Superior Visible-Light Performance

    DEFF Research Database (Denmark)

    Su, Ren; Bechstein, Ralf; Kibsgaard, Jakob

    2012-01-01

    We report on high-quality polycrystalline Fe-doped TiO2 (Fe–TiO2) porous films synthesized via one-step electrochemical oxidation. We demonstrate that delicate properties such as the impurity concentration and the microstructure that strongly influence the performance of the material for photovol...

  5. Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

    NARCIS (Netherlands)

    Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2017-01-01

    A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the

  6. Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

    NARCIS (Netherlands)

    Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2018-01-01

    A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was

  7. Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

    KAUST Repository

    Yao, Kexin; Chen, Yanli; Lu, Yue; Zhao, Yunfeng; Ding, Yi

    2017-01-01

    ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1

  8. Steps in growth of Nb-doped layered titanates with very high surface area suitable for water purification

    International Nuclear Information System (INIS)

    Milanović, Marija; Nikolić, Ljubica M.; Stijepović, Ivan; Kontos, Athanassios G.; Giannakopoulos, Konstantinos P.

    2014-01-01

    Nb-doped layered titanates, as highly efficient adsorbents, have been synthesized by hydrothermal reaction for variable duration and at 150 °C in a highly alkaline solution with NbCl 5 as the Nb source. The results have shown the formation of nanosheets already after 1 h of hydrothermal processing, but morphology and phase composition change as the reaction proceeds. The prepared layered titanates have been structurally investigated via scanning and transmission electron microscopy, X-ray diffraction, as well as Raman and Fourier transform infrared spectroscopies. The steps of layered titanate growth have been followed and an intermediate layered anatase phase is identified. Thus optimized growth of mesoporous titanate materials with 10% Nb atomic content present very high specific surface area of 345.3 m 2  g −1 , and perform as very efficient adsorbents for wastewater treatment applications. - Highlights: • Nb-doped layered titanates have been prepared by a hydrothermal procedure. • Introduction of Nb to precursor lowers the rate of layered titanate formation. • Steps in growth of Nb-doped layered titanates are considered. • Nb-doped layered titanates show high/fast MB adsorption from concentrated solution

  9. The high level vibration test program

    International Nuclear Information System (INIS)

    Hofmayer, C.H.; Curreri, J.R.; Park, Y.J.; Kato, W.Y.; Kawakami, S.

    1989-01-01

    As part of cooperative agreements between the US and Japan, tests have been performed on the seismic vibration table at the Tadotsu Engineering Laboratory of Nuclear Power Engineering Test Center (NUPEC) in Japan. The objective of the test program was to use the NUPEC vibration table to drive large diameter nuclear power piping to substantial plastic strain with an earthquake excitation and to compare the results with state-of-the-art analysis of the problem. The test model was subjected to a maximum acceleration well beyond what nuclear power plants are designed to withstand. A modified earthquake excitation was applied and the excitation level was increased carefully to minimize the cumulative fatigue damage due to the intermediate level excitations. Since the piping was pressurized, and the high level earthquake excitation was repeated several times, it was possible to investigate the effects of ratchetting and fatigue as well. Elastic and inelastic seismic response behavior of the test model was measured in a number of test runs with an increasing excitation input level up to the limit of the vibration table. In the maximum input condition, large dynamic plastic strains were obtained in the piping. Crack initiation was detected following the second maximum excitation run. Crack growth was carefully monitored during the next two additional maximum excitation runs. The final test resulted in a maximum crack depth of approximately 94% of the wall thickness. The HLVT (high level vibration test) program has enhanced understanding of the behavior of piping systems under severe earthquake loading. As in other tests to failure of piping components, it has demonstrated significant seismic margin in nuclear power plant piping

  10. High-sensitivity chemiluminescence immunoassays for detection of growth hormone doping in sports.

    Science.gov (United States)

    Bidlingmaier, Martin; Suhr, Jennifer; Ernst, Andrea; Wu, Zida; Keller, Alexandra; Strasburger, Christian J; Bergmann, Andreas

    2009-03-01

    Recombinant human growth hormone (rhGH) is abused in sports, but adequate routine doping tests are lacking. Analysis of serum hGH isoform composition has been shown to be effective in detecting rhGH doping. We developed and validated selective immunoassays for isoform analysis with potential utility for screening and confirmation in doping tests. Monoclonal antibodies with preference for pituitary hGH (phGH) or rhGH were used to establish 2 pairs of sandwich-type chemiluminescence assays with differential recognition of rhGH (recA and recB) and phGH (pitA and pitB). We analyzed specimens from volunteers before and after administration of rhGH and calculated ratios between the respective rec- and pit-assay results. Functional sensitivities were <0.05 microg/L, with intra- and interassay imprecision < or =8.4% and < or =13.7%, respectively. In 2 independent cohorts of healthy subjects, rec/pit ratios (median range) were 0.84 (0.09-1.32)/0.81 (0.27-1.21) (recA/pitA) and 0.68 (0.08-1.20)/0.80 (0.25-1.36) (recB/pitB), with no sex difference. In 20 recreational athletes, ratios (median SD) increased after a single injection of rhGH, reaching 350% (73%) (recA/pitA) and 400% (93%) (recB/pitB) of baseline ratios. At a moderate dose (0.033 mg/kg), mean recA/pitA and recB/pitB ratios remained significantly increased for 18 h (men) and 26 h (women). After high-dose rhGH (0.083 mg/kg), mean rec/pit ratios remained increased for 32 h (recA/pitA) and 34 h (recB/pitB) in men and were still increased after 36 h in women. Using sensitive chemiluminescence assays with preferential recognition of phGH or rhGH, detection of a single injection of rhGH was possible for up to 36 h.

  11. Ramifications of defining high-level waste

    International Nuclear Information System (INIS)

    Wood, D.E.; Campbell, M.H.; Shupe, M.W.

    1987-01-01

    The Nuclear Regulatory Commission (NRC) is considering rule making to provide a concentration-based definition of high-level waste (HLW) under authority derived from the Nuclear Waste Policy Act (NWPA) of 1982 and the Low Level Waste Policy Amendments Act of 1985. The Department of Energy (DOE), which has the responsibility to dispose of certain kinds of commercial waste, is supporting development of a risk-based classification system by the Oak Ridge National Laboratory to assist in developing and implementing the NRC rule. The system is two dimensional, with the axes based on the phrases highly radioactive and requires permanent isolation in the definition of HLW in the NWPA. Defining HLW will reduce the ambiguity in the present source-based definition by providing concentration limits to establish which materials are to be called HLW. The system allows the possibility of greater-confinement disposal for some wastes which do not require the degree of isolation provided by a repository. The definition of HLW will provide a firm basis for waste processing options which involve partitioning of waste into a high-activity stream for repository disposal, and a low-activity stream for disposal elsewhere. Several possible classification systems have been derived and the characteristics of each are discussed. The Defense High Level Waste Technology Lead Office at DOE - Richland Operations Office, supported by Rockwell Hanford Operations, has coordinated reviews of the ORNL work by a technical peer review group and other DOE offices. The reviews produced several recommendations and identified several issues to be addressed in the NRC rule making. 10 references, 3 figures

  12. High multi-photon visible upconversion emissions of Er3+ singly doped BiOCl microcrystals: A photon avalanche of Er3+ induced by 980 nm excitation

    International Nuclear Information System (INIS)

    Li, Yongjin; Song, Zhiguo; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi

    2013-01-01

    Under 980 nm excitation, high multi-photon upconversion (UC) emission from the 2 H 11/2 / 4 S 3/2 (green) and 4 F 9/2 (red) levels of Er 3+ ions were observed from Er 3+ singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er 3+ ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er 3+ ions doping

  13. High multi-photon visible upconversion emissions of Er{sup 3+} singly doped BiOCl microcrystals: A photon avalanche of Er{sup 3+} induced by 980 nm excitation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yongjin; Song, Zhiguo, E-mail: songzg@kmust.edu.cn; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2013-12-02

    Under 980 nm excitation, high multi-photon upconversion (UC) emission from the {sup 2}H{sub 11/2}/{sup 4}S{sub 3/2} (green) and {sup 4}F{sub 9/2} (red) levels of Er{sup 3+} ions were observed from Er{sup 3+} singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er{sup 3+} ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er{sup 3+} ions doping.

  14. High gain L-band erbium-doped fiber amplifier with two-stage ...

    Indian Academy of Sciences (India)

    stage erbium-doped fiber amplifier; amplified spontaneous emission. Abstract. An experiment on gain enhancement in the long wavelength band erbium-doped fiber amplifier (L-band EDFA) is demonstrated using dual forward pumping scheme ...

  15. Progress in efficient doping of high aluminum-containing group III-nitrides

    Science.gov (United States)

    Liang, Y.-H.; Towe, E.

    2018-03-01

    The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

  16. High-power quantum-dot superluminescent diodes with p-doped active region

    NARCIS (Netherlands)

    Rossetti, M.; Li, L.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Kovsh, A.

    2006-01-01

    We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

  17. Highly photosensitive polymethyl methacrylate microstructured polymer optical fiber with doped core

    DEFF Research Database (Denmark)

    Sáez-Rodríguez, D.; Nielsen, Kristian; Rasmussen, Henrik K.

    2013-01-01

    , providing a grating with a strong transmission rejection of −23  dB with an inscription time of only 13 min. The fabrication method has a big advantage compared to doping step index fiber since it enables doping of the fiber without using extra dopants to compensate for the index reduction in the core...

  18. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors ...

  19. Graphene oxide quantum dot-derived nitrogen-enriched hybrid graphene nanosheets by simple photochemical doping for high-performance supercapacitors

    Science.gov (United States)

    Xu, Yongjie; Li, Xinyu; Hu, Guanghui; Wu, Ting; Luo, Yi; Sun, Lang; Tang, Tao; Wen, Jianfeng; Wang, Heng; Li, Ming

    2017-11-01

    Nitrogen-enriched graphene was fabricated via a facile strategy. Graphene oxide (GO) nanosheets and graphene oxide quantum dots (GQDs) were used as a structure-directing agent and in situ activating agent, respectively, after photoreduction under NH3 atmosphere. The combination of photoreduction and NH3 not only reduced GO and GQD composites (GO/GQDs) within a shorter duration but also doped a high level of nitrogen on the composites (NrGO/GQDs). The nitrogen content of NrGO/GQDs reached as high as 18.86 at% within 5 min of irradiation. Benefiting from the nitrogen-enriched GO/GQDs hybrid structure, GQDs effectively prevent the agglomeration of GO sheets and increased the numbers of ion channels in the material. Meanwhile, the high levels of nitrogen improved electrical conductivity and strengthened the binding energy between GQD and GO sheets. Compared with reduced GO and low nitrogen-doped reduced GO, NrGO/GQD electrodes exhibited better electrochemical characteristics with a high specific capacitance of 344 F g-1 at a current density of 0.25 A g-1. Moreover, the NrGO/GQD electrodes exhibited 82% capacitance retention after 3000 cycles at a current density of 0.8 A g-1 in 6 M KOH electrolyte. More importantly, the NrGO/GQD electrodes deliver a high energy density of 43 Wh kg-1 at a power density of 417 W kg-1 in 1 M Li2SO4 electrolyte. The nitrogen-doped graphene and corresponding supercapacitor presented in this study are novel materials with potential applications in advanced energy storage systems.

  20. A high energy and power sodium-ion hybrid capacitor based on nitrogen-doped hollow carbon nanowires anode

    Science.gov (United States)

    Li, Dongdong; Ye, Chao; Chen, Xinzhi; Wang, Suqing; Wang, Haihui

    2018-04-01

    The sodium ion hybrid capacitor (SHC) has been attracting much attention. However, the SHC's power density is significantly confined to a low level due to the sluggish ion diffusion in the anode. Herein, we propose to use an electrode with a high double layer capacitance as the anode in the SHC instead of insertion anodes. To this aim, nitrogen doped hollow carbon nanowires (N-HCNWs) with a high specific surface area are prepared, and the high capacitive contribution during the sodium ion storage process is confirmed by a series of electrochemical measurements. A new SHC consisting of a N-HCNW anode and a commercial active carbon (AC) cathode is fabricated for the first time. Due to the hybrid charge storage mechanism combining ion insertion and capacitive process, the as-fabricated SHC strikes a balance between the energy density and power density, a energy density of 108 Wh kg-1 and a power density of 9 kW kg-1 can be achieved, which overwhelms the electrochemical performances of most reported AC-based SHCs.

  1. Intergenerational ethics of high level radioactive waste

    Energy Technology Data Exchange (ETDEWEB)

    Takeda, Kunihiko [Nagoya Univ., Graduate School of Engineering, Nagoya, Aichi (Japan); Nasu, Akiko; Maruyama, Yoshihiro [Shibaura Inst. of Tech., Tokyo (Japan)

    2003-03-01

    The validity of intergenerational ethics on the geological disposal of high level radioactive waste originating from nuclear power plants was studied. The result of the study on geological disposal technology showed that the current method of disposal can be judged to be scientifically reliable for several hundred years and the radioactivity level will be less than one tenth of the tolerable amount after 1,000 years or more. This implies that the consideration of intergenerational ethics of geological disposal is meaningless. Ethics developed in western society states that the consent of people in the future is necessary if the disposal has influence on them. Moreover, the ethics depends on generally accepted ideas in western society and preconceptions based on racism and sexism. The irrationality becomes clearer by comparing the dangers of the exhaustion of natural resources and pollution from harmful substances in a recycling society. (author)

  2. Management of high level radioactive waste

    International Nuclear Information System (INIS)

    Redon, A.; Mamelle, J.; Chambon, M.

    1977-01-01

    The world wide needs in reprocessing will reach the value of 10.000 t/y of irradiated fuels, in the mid of the 80's. Several countries will have planned, in their nuclear programme, the construction of reprocessing plants with a 1500 t/y capacity, corresponding to 50.000 MWe installed. At such a level, the solidification of the radioactive waste will become imperative. For this reason, all efforts, in France, have been directed towards the realization of industrial plants able of solidifying the fission products as a glassy material. The advantages of this decision, and the reasons for it are presented. The continuing development work, and the conditions and methods of storing the high-level wastes prior to solidification, and of the interim storage (for thermal decay) and the ultimate disposal after solidification are described [fr

  3. Intergenerational ethics of high level radioactive waste

    International Nuclear Information System (INIS)

    Takeda, Kunihiko; Nasu, Akiko; Maruyama, Yoshihiro

    2003-01-01

    The validity of intergenerational ethics on the geological disposal of high level radioactive waste originating from nuclear power plants was studied. The result of the study on geological disposal technology showed that the current method of disposal can be judged to be scientifically reliable for several hundred years and the radioactivity level will be less than one tenth of the tolerable amount after 1,000 years or more. This implies that the consideration of intergenerational ethics of geological disposal is meaningless. Ethics developed in western society states that the consent of people in the future is necessary if the disposal has influence on them. Moreover, the ethics depends on generally accepted ideas in western society and preconceptions based on racism and sexism. The irrationality becomes clearer by comparing the dangers of the exhaustion of natural resources and pollution from harmful substances in a recycling society. (author)

  4. The CMS High Level Trigger System

    CERN Document Server

    Afaq, A; Bauer, G; Biery, K; Boyer, V; Branson, J; Brett, A; Cano, E; Carboni, A; Cheung, H; Ciganek, M; Cittolin, S; Dagenhart, W; Erhan, S; Gigi, D; Glege, F; Gómez-Reino, Robert; Gulmini, M; Gutiérrez-Mlot, E; Gutleber, J; Jacobs, C; Kim, J C; Klute, M; Kowalkowski, J; Lipeles, E; Lopez-Perez, Juan Antonio; Maron, G; Meijers, F; Meschi, E; Moser, R; Murray, S; Oh, A; Orsini, L; Paus, C; Petrucci, A; Pieri, M; Pollet, L; Rácz, A; Sakulin, H; Sani, M; Schieferdecker, P; Schwick, C; Sexton-Kennedy, E; Sumorok, K; Suzuki, I; Tsirigkas, D; Varela, J

    2007-01-01

    The CMS Data Acquisition (DAQ) System relies on a purely software driven High Level Trigger (HLT) to reduce the full Level-1 accept rate of 100 kHz to approximately 100 Hz for archiving and later offline analysis. The HLT operates on the full information of events assembled by an event builder collecting detector data from the CMS front-end systems. The HLT software consists of a sequence of reconstruction and filtering modules executed on a farm of O(1000) CPUs built from commodity hardware. This paper presents the architecture of the CMS HLT, which integrates the CMS reconstruction framework in the online environment. The mechanisms to configure, control, and monitor the Filter Farm and the procedures to validate the filtering code within the DAQ environment are described.

  5. High level waste fixation in cermet form

    International Nuclear Information System (INIS)

    Kobisk, E.H.; Aaron, W.S.; Quinby, T.C.; Ramey, D.W.

    1981-01-01

    Commercial and defense high level waste fixation in cermet form is being studied by personnel of the Isotopes Research Materials Laboratory, Solid State Division (ORNL). As a corollary to earlier research and development in forming high density ceramic and cermet rods, disks, and other shapes using separated isotopes, similar chemical and physical processing methods have been applied to synthetic and real waste fixation. Generally, experimental products resulting from this approach have shown physical and chemical characteristics which are deemed suitable for long-term storage, shipping, corrosive environments, high temperature environments, high waste loading, decay heat dissipation, and radiation damage. Although leach tests are not conclusive, what little comparative data are available show cermet to withstand hydrothermal conditions in water and brine solutions. The Soxhlet leach test, using radioactive cesium as a tracer, showed that leaching of cermet was about X100 less than that of 78 to 68 glass. Using essentially uncooled, untreated waste, cermet fixation was found to accommodate up to 75% waste loading and yet, because of its high thermal conductivity, a monolith of 0.6 m diameter and 3.3 m-length would have only a maximum centerline temperature of 29 K above the ambient value

  6. Fabrication of lanthanum-doped thorium dioxide by high-energy ball milling and spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Scott, Spencer M.; Yao, Tiankai [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180 (United States); Lu, Fengyuan [Department of Mechanical & Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803 (United States); Xin, Guoqing; Zhu, Weiguang [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180 (United States); Lian, Jie, E-mail: lianj@rpi.edu [Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180 (United States)

    2017-03-15

    Abstract: High-energy ball milling was used to synthesize Th{sub 1-x}La{sub x}O{sub 2-0.5x} (x = 0.09, 0.23) solid solutions, as well as improve the sinterability of ThO{sub 2} powders. Dense La-doped ThO{sub 2} pellets with theoretical density above 94% were consolidated by spark plasma sintering at temperatures above 1400 °C for 20 min, and the densification behavior and the non-equilibrium effects on phase and structure were investigated. A lattice contraction of the SPS-densified pellets occurred with increasing ball milling duration, and a secondary phase with increased La-content was observed in La-doped pellets. A dependence on the La-content and sintering duration for the onset of localized phase segregation has been proposed. The effects of high-energy ball milling, La-content, and phase formation on the thermal diffusivity were also studied for La-doped ThO{sub 2} pellets by laser flash measurement. Increasing La-content and high energy ball milling time decreases thermal diffusivity; while the sintering peak temperature and holding time beyond 1600 °C dramatically altered the temperature dependence of the thermal diffusivity beyond 600 °C. - Highlights: • Lanthanum incorporation into ThO{sub 2} by high energy ball milling and rapid consolidation by spark plasma sintering. • Elucidation of phase behavior of the La-doped ThO{sub 2} and the contributions of La incorporation and SPS sintering conditions. • Investigation of the effects of La incorporation and high energy ball milling on the thermal behavior of La-doped ThO{sub 2}.

  7. Liquid level measurement in high level nuclear waste slurries

    International Nuclear Information System (INIS)

    Weeks, G.E.; Heckendorn, F.M.; Postles, R.L.

    1990-01-01

    Accurate liquid level measurement has been a difficult problem to solve for the Defense Waste Processing Facility (DWPF). The nuclear waste sludge tends to plug or degrade most commercially available liquid-level measurement sensors. A liquid-level measurement system that meets demanding accuracy requirements for the DWPF has been developed. The system uses a pneumatic 1:1 pressure repeater as a sensor and a computerized error correction system. 2 figs

  8. Tailoring the morphology followed by the electrochemical performance of NiMn-LDH nanosheet arrays through controlled Co-doping for high-energy and power asymmetric supercapacitors.

    Science.gov (United States)

    Singh, Saurabh; Shinde, Nanasaheb M; Xia, Qi Xun; Gopi, Chandu V V M; Yun, Je Moon; Mane, Rajaram S; Kim, Kwang Ho

    2017-10-14

    Herein, we tailor the surface morphology of nickel-manganese-layered double hydroxide (NiMn-LDH) nanostructures on 3D nickel-foam via a step-wise cobalt (Co)-doping hydrothermal chemical process. At the 10% optimum level of Co-doping, we noticed a thriving tuned morphological pattern of NiMn-LDH nanostructures (NiCoMn-LDH (10%)) in terms of the porosity of the nanosheet (NS) arrays which not only improves the rate capability as well as cycling stability, but also demonstrates nearly two-fold specific capacitance enhancement compared to Co-free and other NiCoMn-LDH electrodes with a half-cell configuration in 3 M KOH, suggesting that Co-doping is indispensable for improving the electrochemical performance of NiMn-LDH electrodes. Moreover, when this high performing NiCoMn-LDH (10%) electrode is employed as a cathode material to fabricate an asymmetric supercapacitor (ASC) device with reduced graphene oxide (rGO) as an anode material, excellent energy storage performance (57.4 Wh kg -1 at 749.9 W kg -1 ) and cycling stability (89.4% capacitive retention even after 2500 cycles) are corroborated. Additionally, we present a demonstration of illuminating a light emitting diode for 600 s with the NiCoMn-LDH (10%)//rGO ASC device, evidencing the potential of the NiCoMn-LDH (10%) electrode in fabricating energy storage devices.

  9. Service Oriented Architecture for High Level Applications

    International Nuclear Information System (INIS)

    Chu, P.

    2012-01-01

    Standalone high level applications often suffer from poor performance and reliability due to lengthy initialization, heavy computation and rapid graphical update. Service-oriented architecture (SOA) is trying to separate the initialization and computation from applications and to distribute such work to various service providers. Heavy computation such as beam tracking will be done periodically on a dedicated server and data will be available to client applications at all time. Industrial standard service architecture can help to improve the performance, reliability and maintainability of the service. Robustness will also be improved by reducing the complexity of individual client applications.

  10. Simplifying and expanding analytical capabilities for various classes of doping agents by means of direct urine injection high performance liquid chromatography high resolution/high accuracy mass spectrometry.

    Science.gov (United States)

    Görgens, Christian; Guddat, Sven; Thomas, Andreas; Wachsmuth, Philipp; Orlovius, Anne-Katrin; Sigmund, Gerd; Thevis, Mario; Schänzer, Wilhelm

    2016-11-30

    So far, in sports drug testing compounds of different classes are processed and measured using different screening procedures. The constantly increasing number of samples in doping analysis, as well as the large number of substances with doping related, pharmacological effects require the development of even more powerful assays than those already employed in sports drug testing, indispensably with reduced sample preparation procedures. The analysis of native urine samples after direct injection provides a promising analytical approach, which thereby possesses a broad applicability to many different compounds and their metabolites, without a time-consuming sample preparation. In this study, a novel multi-target approach based on liquid chromatography and high resolution/high accuracy mass spectrometry is presented to screen for more than 200 analytes of various classes of doping agents far below the required detection limits in sports drug testing. Here, classic groups of drugs as diuretics, stimulants, β 2 -agonists, narcotics and anabolic androgenic steroids as well as various newer target compounds like hypoxia-inducible factor (HIF) stabilizers, selective androgen receptor modulators (SARMs), selective estrogen receptor modulators (SERMs), plasma volume expanders and other doping related compounds, listed in the 2016 WADA prohibited list were implemented. As a main achievement, growth hormone releasing peptides could be implemented, which chemically belong to the group of small peptides (0.99), limit of detection (0.1-25ng/mL; 3'OH-stanozolol glucuronide: 50pg/mL; dextran/HES: 10μg/mL) and matrix effects. Copyright © 2016 Elsevier B.V. All rights reserved.

  11. The ARES High-level Intermediate Representation

    Energy Technology Data Exchange (ETDEWEB)

    Moss, Nicholas David [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-03

    The LLVM intermediate representation (IR) lacks semantic constructs for depicting common high-performance operations such as parallel and concurrent execution, communication and synchronization. Currently, representing such semantics in LLVM requires either extending the intermediate form (a signi cant undertaking) or the use of ad hoc indirect means such as encoding them as intrinsics and/or the use of metadata constructs. In this paper we discuss a work in progress to explore the design and implementation of a new compilation stage and associated high-level intermediate form that is placed between the abstract syntax tree and when it is lowered to LLVM's IR. This highlevel representation is a superset of LLVM IR and supports the direct representation of these common parallel computing constructs along with the infrastructure for supporting analysis and transformation passes on this representation.

  12. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    Science.gov (United States)

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. High damping properties of magnetic particles doped rubber composites at wide frequency

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Ye, E-mail: schtiany@163.com [Research Center for Engineering Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan 030051 (China); College of Material Science and Engineering, North University of China, Taiyuan 030051 (China); Liu, Yaqing, E-mail: lyq@nuc.edu.cn [Research Center for Engineering Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan 030051 (China); College of Material Science and Engineering, North University of China, Taiyuan 030051 (China); He, Minhong; Zhao, Guizhe; Sun, Youyi [Research Center for Engineering Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan 030051 (China); College of Material Science and Engineering, North University of China, Taiyuan 030051 (China)

    2013-05-15

    Highlights: ► A new kind of permanent magnetic rubber was prepared. ► The microstructure and magnetic properties were investigated. ► The mechanical and damping properties were discussed. ► The new material is expected to be an isolator material to a changed frequency. - Abstract: A new kind of rubber composite was prepared by doping SrFe{sub 12}O{sub 19} nanoparticles coated with silane coupling agents (Si-69) into nitrile butadiene rubber (NBR) matrix, which was characterized by the scanning electron microscopy and X-ray spectroscopy. The results showed that the SrFe{sub 12}O{sub 19} nanoparticles were well dispersed in rubber matrix. Furthermore, the mechanical and magnetic properties of the rubber composites were investigated, in which the high tensile strength (15.8 MPa) and high saturation magnetization (22.9 emu/g) were observed. What is more, the high loss factor of the rubber composites was also obtained in a wide frequency range (0–100 Hz) at high loading (80 phr). The result is attributed to that the permanent magnetic field in rubber nanocomposites can absorb shock energy. These results indicate that the new kind of permanent magnetic rubber is expected to be a smart isolator material, in which the isolator will be able to adapt to a changed frequency.

  14. Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

    Science.gov (United States)

    Shakhov, Fedor M.; Abyzov, Andrey M.; Takai, Kazuyuki

    2017-12-01

    Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C5H8(OH)4 and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6-80 nm and the increase in diamond lattice parameter by 0.02-0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm-1 to 1290 cm-1 without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω-1 cm-1. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H2O, CH4, CO, CO2, etc.), as well as byproducts formation (B2O3, B4C).

  15. Exposure to unusually high indoor radon levels

    International Nuclear Information System (INIS)

    Rasheed, F.N.

    1993-01-01

    Unusually high indoor radon concentrations were reported in a small village in western Tyrol, Austria. The authors have measured the seasonal course of indoor radon concentrations in 390 houses of this village. 71% of houses in winter and 33% in summer, showed radon values on the ground floor above the Austrian action level of 400 Bq/cm 3 . This proportion results in an unusually high indoor radon exposure of the population. The radon source was an 8,700-year-old rock slide of granite gneiss, the largest of the alpine crystalline rocks. It has a strong emanating power because its rocks are heavily fractured and show a slightly increased uranium content. Previous reports show increased lung cancer mortality, myeloid leukemia, kidney cancer, melanoma, and prostate cancer resulting from indoor radon exposure. However, many studies fail to provide accurate information on indoor radon concentrations, classifying them merely as low, intermediate, and high, or they record only minor increases in indoor radon concentrations. Mortality data for 1970-91 were used to calculate age and sex standardized mortality rates (SMR) for 51 sites of carcinoma. The total population of Tyrol were controls. A significantly higher risk was recorded for lung cancer. The high SMR for lung cancer in female subjects is especially striking. Because the numbers were low for the other cancer sites, these were combined in one group to calculate the SMR. No significant increase in SMR was found for this group

  16. Technetium Chemistry in High-Level Waste

    International Nuclear Information System (INIS)

    Hess, Nancy J.

    2006-01-01

    Tc contamination is found within the DOE complex at those sites whose mission involved extraction of plutonium from irradiated uranium fuel or isotopic enrichment of uranium. At the Hanford Site, chemical separations and extraction processes generated large amounts of high level and transuranic wastes that are currently stored in underground tanks. The waste from these extraction processes is currently stored in underground High Level Waste (HLW) tanks. However, the chemistry of the HLW in any given tank is greatly complicated by repeated efforts to reduce volume and recover isotopes. These processes ultimately resulted in mixing of waste streams from different processes. As a result, the chemistry and the fate of Tc in HLW tanks are not well understood. This lack of understanding has been made evident in the failed efforts to leach Tc from sludge and to remove Tc from supernatants prior to immobilization. Although recent interest in Tc chemistry has shifted from pretreatment chemistry to waste residuals, both needs are served by a fundamental understanding of Tc chemistry

  17. Processing vessel for high level radioactive wastes

    International Nuclear Information System (INIS)

    Maekawa, Hiromichi

    1998-01-01

    Upon transferring an overpack having canisters containing high level radioactive wastes sealed therein and burying it into an underground processing hole, an outer shell vessel comprising a steel plate to be fit and contained in the processing hole is formed. A bury-back layer made of dug earth and sand which had been discharged upon forming the processing hole is formed on the inner circumferential wall of the outer shell vessel. A buffer layer having a predetermined thickness is formed on the inner side of the bury-back layer, and the overpack is contained in the hollow portion surrounded by the layer. The opened upper portion of the hollow portion is covered with the buffer layer and the bury-back layer. Since the processing vessel having a shielding performance previously formed on the ground, the state of packing can be observed. In addition, since an operator can directly operates upon transportation and burying of the high level radioactive wastes, remote control is no more necessary. (T.M.)

  18. Tracking at High Level Trigger in CMS

    CERN Document Server

    Tosi, Mia

    2016-01-01

    The trigger systems of the LHC detectors play a crucial role in determining the physics capabili- ties of the experiments. A reduction of several orders of magnitude of the event rate is needed to reach values compatible with detector readout, offline storage and analysis capability. The CMS experiment has been designed with a two-level trigger system: the Level-1 Trigger (L1T), implemented on custom-designed electronics, and the High Level Trigger (HLT), a stream- lined version of the CMS offline reconstruction software running on a computer farm. A software trigger system requires a trade-off between the complexity of the algorithms, the sustainable out- put rate, and the selection efficiency. With the computing power available during the 2012 data taking the maximum reconstruction time at HLT was about 200 ms per event, at the nominal L1T rate of 100 kHz. Track reconstruction algorithms are widely used in the HLT, for the reconstruction of the physics objects as well as in the identification of b-jets and ...

  19. CMS High Level Trigger Timing Measurements

    International Nuclear Information System (INIS)

    Richardson, Clint

    2015-01-01

    The two-level trigger system employed by CMS consists of the Level 1 (L1) Trigger, which is implemented using custom-built electronics, and the High Level Trigger (HLT), a farm of commercial CPUs running a streamlined version of the offline CMS reconstruction software. The operational L1 output rate of 100 kHz, together with the number of CPUs in the HLT farm, imposes a fundamental constraint on the amount of time available for the HLT to process events. Exceeding this limit impacts the experiment's ability to collect data efficiently. Hence, there is a critical need to characterize the performance of the HLT farm as well as the algorithms run prior to start up in order to ensure optimal data taking. Additional complications arise from the fact that the HLT farm consists of multiple generations of hardware and there can be subtleties in machine performance. We present our methods of measuring the timing performance of the CMS HLT, including the challenges of making such measurements. Results for the performance of various Intel Xeon architectures from 2009-2014 and different data taking scenarios are also presented. (paper)

  20. Current anti-doping policy: a critical appraisal.

    Science.gov (United States)

    Kayser, Bengt; Mauron, Alexandre; Miah, Andy

    2007-03-29

    Current anti-doping in competitive sports is advocated for reasons of fair-play and concern for the athlete's health. With the inception of the World Anti Doping Agency (WADA), anti-doping effort has been considerably intensified. Resources invested in anti-doping are rising steeply and increasingly involve public funding. Most of the effort concerns elite athletes with much less impact on amateur sports and the general public. We review this recent development of increasingly severe anti-doping control measures and find them based on questionable ethical grounds. The ethical foundation of the war on doping consists of largely unsubstantiated assumptions about fairness in sports and the concept of a "level playing field". Moreover, it relies on dubious claims about the protection of an athlete's health and the value of the essentialist view that sports achievements reflect natural capacities. In addition, costly antidoping efforts in elite competitive sports concern only a small fraction of the population. From a public health perspective this is problematic since the high prevalence of uncontrolled, medically unsupervised doping practiced in amateur sports and doping-like behaviour in the general population (substance use for performance enhancement outside sport) exposes greater numbers of people to potential harm. In addition, anti-doping has pushed doping and doping-like behaviour underground, thus fostering dangerous practices such as sharing needles for injection. Finally, we argue that the involvement of the medical profession in doping and anti-doping challenges the principles of non-maleficience and of privacy protection. As such, current anti-doping measures potentially introduce problems of greater impact than are solved, and place physicians working with athletes or in anti-doping settings in an ethically difficult position. In response, we argue on behalf of enhancement practices in sports within a framework of medical supervision. Current anti-doping

  1. 3 kW single stage all-fiber Yb-doped single-mode fiber laser for highly reflective and highly thermal conductive materials processing

    Science.gov (United States)

    Ikoma, S.; Nguyen, H. K.; Kashiwagi, M.; Uchiyama, K.; Shima, K.; Tanaka, D.

    2017-02-01

    A 3 kW single stage all-fiber Yb-doped single-mode fiber laser with bi-directional pumping configuration has been demonstrated. Our newly developed high-power LD modules are employed for a high available pump power of 4.9 kW. The length of the delivery fiber is 20 m which is long enough to be used in most of laser processing machines. An output power of 3 kW was achieved at a pump power of 4.23 kW. The slope efficiency was 70%. SRS was able to be suppressed at the same output power by increasing ratio of backward pump power. The SRS level was improved by 5dB when 57% backward pump ratio was adopted compared with the case of 50%. SRS was 35dB below the laser power at the output power of 3 kW even with a 20-m delivery fiber. The M-squared factor was 1.3. Single-mode beam quality was obtained. To evaluate practical utility of the 3 kW single-mode fiber laser, a Bead-on-Plate (BoP) test onto a pure copper plate was executed. The BoP test onto a copper plate was made without stopping or damaging the laser system. That indicates our high power single-mode fiber lasers can be used practically in processing of materials with high reflectivity and high thermal conductivity.

  2. Synthesis, characterization and electroluminescence of two highly-twisted non-doped blue light-emitting materials

    Science.gov (United States)

    Gong, Xiaojie; Pan, Yipeng; Xie, Xiang; Tong, Tong; Chen, Runfeng; Gao, Deqing

    2018-04-01

    Two pyrene derivatives, substituted with 2-methylnaphthalene units on 1,3-position and 1,6-position of pyrene backbones, were designed and synthesized. DFT calculation confirmed that the two molecules were highly twisted and the dihedral angles between pyrene backbone and naphthalene unit were over 80°, being attributed to the steric hindrance of ortho-methyl group and the substitution position of pyrene itself. As a result, the intermolecular aggregation was greatly inhibited in the solid state, being beneficial for suppressing the fluorescence quenching. By analyzing the optical and thermal properties, it was found that the π-π conjugation extension could be adjusted and a balance for high fluorescent efficiency and avoiding quenching at the same time could be reached, which may guide the molecular design in the future. The electroluminescence properties of the non-doped devices were enhanced with the double hole-transporting layers by optimizing the energy level matching. The stable blue EL emission, with the Commission Internationaled'Eclairage (CIEx,y) color coordinates of (0.15, 0.13) and (0.15, 0.11) at 7, 8, 9 and 10 V respectively, was obtained.

  3. Ternary nitrogen-doped graphene/nickel ferrite/polyaniline nanocomposites for high-performance supercapacitors

    Science.gov (United States)

    Wang, Wenjuan; Hao, Qingli; Lei, Wu; Xia, Xifeng; Wang, Xin

    2014-12-01

    The electrochemical property of graphene can be significantly enhanced due to the incorporating of heteroatoms into graphene. In this article, the ternary nitrogen-doped graphene/nickel ferrite/polyaniline (NGNP) nanocomposite is synthesized by a facile two-step approach and its electrochemical properties as electrodes for supercapacitors are studied by various electrochemical measurements. The specific capacitance of NGNP is 645.0 F g-1 at 1 mV s-1 and 667.0 F g-1 at 0.1 A g-1 in a three- and two-electrode system, respectively, much higher than other binary electrodes. In a two-electrode symmetric system, the energy density of the NGNP electrode is 92.7 W h kg-1 at a power density of 110.8 W kg-1, moreover, that of the supercapacitor based on NGNP can also reach 23.2 W h kg-1 at a power density of 27.7 W kg-1. In addition, the capacitance loses only 5% after repeating test for 5000 cycles, and about 10% after 10,000 cycles at a high current density 5 A g-1. The results demonstrate the novel ternary NGNP electrode produced by the current economical method will gain promising applications in supercapacitors and other devices by virtue of its outstanding characteristics (high specific capacitance, high power and energy density, excellent cycle life).

  4. Nitrogen-doped Carbon Microfiber with Wrinkled Surface for High Performance Supercapacitors

    Science.gov (United States)

    Liu, Ruili; Pan, Lixia; Jiang, Jianzhong; Xi, Xin; Liu, Xiaoxue; Wu, Dongqing

    2016-02-01

    In this work, nitrogen-doped carbon microfiber (NCMF) is fabricated via a facile co-assembly of natural silk and graphene oxide (GO) and the following thermal treatment. The amphiphilic nature of GO endows NCMF a crumpled surface with a high surface area of 115 m2 g-1. As the binder-free electrode in electrical double-layer capacitors, NCMF shows an excellent capacitance of 196 F g-1 at scan rate of 5 mV s-1, which is almost four times higher than that of the pristine CMF from silk (55 F g-1). Additionally, the capacitance of NCMF can be kept around 92 F g-1 at a high scan rate of 300 mV s-1 even after 10000 cycles. More importantly, a high energy density (≈22.7 μW h cm-2) and power density (≈10.26 mW cm-2) are achieved by the all-solid-state supercapacitor based on NCMF.

  5. Stabilization of high Tc phase in bismuth cuprate superconductor by lead doping

    Science.gov (United States)

    Gupta, Ram. P.; Pachauri, J. P.; Khokle, W. S.; Nagpal, K. C.; Date, S. K.

    1991-01-01

    It has been widely ascertained that doping of lead in Bi-Sr-Ca-Cu-O systems promotes the growth of high T sub c (110 K) phase, improves critical current density, and lowers processing temperature. A systematic study was undertaken to determine optimum lead content and processing conditions to achieve these properties. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance temperature (R-T) measurements and x ray diffraction to determine the zero resistance temperature, T sub c(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 and 880 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T sub c single phase with highly stable superconducting properties.

  6. Stabilization of high T(sub c) phase in bismuth cuprate superconductor by lead doping

    Science.gov (United States)

    Gupta, Ram. P.; Pachauri, J. P.; Khokle, W. S.; Nagpal, K. C.; Date, S. K.

    1990-01-01

    It has widely been ascertained that doping of lead in Bi:Sr:Ca:Cu:O systems promotes the growth of high T(sub c) (110 K) phase, improves critical current density, and lowers processing temperature. A systematic investigation is undertaken to determine optimum lead content and processing conditions to achieve these. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance-temperature (R-T) measurements and x ray diffraction (XRD) to determine the zero resistance temperature, T(sub c)(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T(sub c) single phase with highly stable superconducting properties.

  7. Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation

    Energy Technology Data Exchange (ETDEWEB)

    Moafi, Hadi Fallah, E-mail: Fallah.m@guilan.ac.ir [Department of Chemistry, Faculty of Science, University of Guilan, P.O. Box 1914, Rasht (Iran, Islamic Republic of); Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah [Department of Chemistry, Faculty of Science, University of Guilan, P.O. Box 1914, Rasht (Iran, Islamic Republic of)

    2013-05-15

    A series of W-doped ZnO nanocomposite with different W contents were synthesized by sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma (ICP) and BET surface area measurement. The XRD results revealed that all the W-doped samples showed a hexagonal wurtzite structure. The results of EDS and XPS revealed that W was doped into ZnO structure. The particle size of doped ZnO is much smaller as compared to that of pure ZnO. The photocatalytic activity of undoped ZnO and W-doped ZnO was evaluated by the photodegradation of methylene blue in aqueous solution. The results show that the photocatalytic activity of the W-doped ZnO is much higher than that of undoped ZnO and the optimum percentage of doped W is 4 mol%. The enhanced photocatalytic activity of the W-ZnO samples may be related to the narrowing of the band gap, increase in the charge separation efficiency, particle size reduction and increase of the surface area. Highlights: ► W-doped ZnO nanocomposites were synthesized by a sol–gel method. ► The XRD results revealed that all the materials consisting of wurtzite structure. ► The sizes of the W-ZnO nanocomposite are 5–10 nm, obtained from TEM image. ► With W doping into ZnO photoinduced charge separation rate has been enhanced. ► Photocatalytic activity of the W-ZnO is much higher than that of undoped ZnO.

  8. Tungsten-doped ZnO nanocomposite: Synthesis, characterization, and highly active photocatalyst toward dye photodegradation

    International Nuclear Information System (INIS)

    Moafi, Hadi Fallah; Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah

    2013-01-01

    A series of W-doped ZnO nanocomposite with different W contents were synthesized by sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma (ICP) and BET surface area measurement. The XRD results revealed that all the W-doped samples showed a hexagonal wurtzite structure. The results of EDS and XPS revealed that W was doped into ZnO structure. The particle size of doped ZnO is much smaller as compared to that of pure ZnO. The photocatalytic activity of undoped ZnO and W-doped ZnO was evaluated by the photodegradation of methylene blue in aqueous solution. The results show that the photocatalytic activity of the W-doped ZnO is much higher than that of undoped ZnO and the optimum percentage of doped W is 4 mol%. The enhanced photocatalytic activity of the W-ZnO samples may be related to the narrowing of the band gap, increase in the charge separation efficiency, particle size reduction and increase of the surface area. Highlights: ► W-doped ZnO nanocomposites were synthesized by a sol–gel method. ► The XRD results revealed that all the materials consisting of wurtzite structure. ► The sizes of the W-ZnO nanocomposite are 5–10 nm, obtained from TEM image. ► With W doping into ZnO photoinduced charge separation rate has been enhanced. ► Photocatalytic activity of the W-ZnO is much higher than that of undoped ZnO

  9. Electrospun N-Doped Porous Carbon Nanofibers Incorporated with NiO Nanoparticles as Free-Standing Film Electrodes for High-Performance Supercapacitors and CO2 Capture.

    Science.gov (United States)

    Li, Qi; Guo, Jiangna; Xu, Dan; Guo, Jianqiang; Ou, Xu; Hu, Yin; Qi, Haojun; Yan, Feng

    2018-04-01

    Carbon nanofibers (CNF) with a 1D porous structure offer promising support to encapsulate transition-metal oxides in energy storage/conversion relying on their high specific surface area and pore volume. Here, the preparation of NiO nanoparticle-dispersed electrospun N-doped porous CNF (NiO/PCNF) and as free-standing film electrode for high-performance electrochemical supercapacitors is reported. Polyacrylonitrile and nickel acetylacetone are selected as precursors of CNF and Ni sources, respectively. Dicyandiamide not only improves the specific surface area and pore volume, but also increases the N-doping level of PCNF. Benefiting from the synergistic effect between NiO nanoparticles (NPs) and PCNF, the prepared free-standing NiO/PCNF electrodes show a high specific capacitance of 850 F g -1 at a current density of 1 A g -1 in 6 m KOH aqueous solution, good rate capability, as well as excellent long-term cycling stability. Moreover, NiO NPs dispersed in PCNF and large specific surface area provide many electroactive sites, leading to high CO 2 uptake, and high-efficiency CO 2 electroreduction. The synthesis strategy in this study provides a new insight into the design and fabrication of promising multifunctional materials for high-performance supercapacitors and CO 2 electroreduction. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Beam size measurement at high radiation levels

    International Nuclear Information System (INIS)

    Decker, F.J.

    1991-05-01

    At the end of the Stanford Linear Accelerator the high energy electron and positron beams are quite small. Beam sizes below 100 μm (σ) as well as the transverse distribution, especially tails, have to be determined. Fluorescent screens observed by TV cameras provide a quick two-dimensional picture, which can be analyzed by digitization. For running the SLAC Linear Collider (SLC) with low backgrounds at the interaction point, collimators are installed at the end of the linac. This causes a high radiation level so that the nearby cameras die within two weeks and so-called ''radiation hard'' cameras within two months. Therefore an optical system has been built, which guides a 5 mm wide picture with a resolution of about 30 μm over a distance of 12 m to an accessible region. The overall resolution is limited by the screen thickness, optical diffraction and the line resolution of the camera. Vibration, chromatic effects or air fluctuations play a much less important role. The pictures are colored to get fast information about the beam current, size and tails. Beside the emittance, more information about the tail size and betatron phase is obtained by using four screens. This will help to develop tail compensation schemes to decrease the emittance growth in the linac at high currents. 4 refs., 2 figs

  11. Effect of yttrium chromite doping on its resistance to high-temperature salt and gas corrosions

    International Nuclear Information System (INIS)

    Oryshich, I.V.; Poryadchenko, N.E.; Rakitskij, A.N.; Bega, N.D.

    1996-01-01

    Effect of yttrium chromite doping with 2-4 group metal oxides on the corrosion resistance in the air at 1300 C during 5 hours and in sodium chloride and sulfate melts at 900 C during 20 hours is investigated. A notable increase of corrosion resistance is achieved under complex doping with zirconium and magnesium oxides in a quantity, close to solubility in yttrium oxide and solubility by aluminium oxide. Doping with calcium and strontium oxides in the quantities, dose to solubility in yttrium oxide does not produce any notable effect, and at higher concentrations it reduces the corrosion resistance in media indicated. Refs. 8, refs. 2, tabs. 1

  12. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima

    2012-01-31

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  13. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima; Klimke, J.; Schwingenschlö gl, Udo

    2012-01-01

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  14. High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2015-01-19

    REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

  15. [Doping and urologic tumors].

    Science.gov (United States)

    Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

    2010-01-01

    Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

  16. Three-dimensional nitrogen and boron co-doped graphene for high-performance all-solid-state supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhong-Shuai; Chen, Long; Sun, Yi; Muellen, Klaus [Max-Planck-Institut fuer Polymerforschung, Ackermannweg 10, 55128 Mainz (Germany); Winter, Andreas; Turchanin, Andrey [Universitaet Bielefeld, Fakultaet fuer Physik, Physik Supramolekularer Systeme und Oberflaechen, Universitaetsstr. 25D, 33615 Bielefeld (Germany); Feng, Xinliang [Max-Planck-Institut fuer Polymerforschung, Ackermannweg 10, 55128 Mainz (Germany); School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, 200240, Shanghai (China)

    2012-09-25

    A simplified prototype device of high-performance all-solid-state supercapacitors (ASSSs) based on 3D nitrogen and boron co-doped monolithic graphene aerogels (BN-GAs) is demonstrated for the first time. The resulting ASSSs show high specific capacitance, good rate capability, and enhanced energy density or power density. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. CAMAC and high-level-languages

    International Nuclear Information System (INIS)

    Degenhardt, K.H.

    1976-05-01

    A proposal for easy programming of CAMAC systems with high-level-languages (FORTRAN, RTL/2, etc.) and interpreters (BASIC, MUMTI, etc.) using a few subroutines and a LAM driver is presented. The subroutines and the LAM driver are implemented for PDP11/RSX-11M and for the CAMAC controllers DEC CA11A (branch controller), BORER type 1533A (single crate controller) and DEC CA11F (single crate controller). Mixed parallel/serial CAMAC systems employing KINETIC SYSTEMS serial driver mod. 3992 and serial crate controllers mod. 3950 are implemented for all mentioned parallel controllers, too. DMA transfers from or to CAMAC modules using non-processor-request controllers (BORER type 1542, DEC CA11FN) are available. (orig.) [de

  18. National high-level waste systems analysis

    International Nuclear Information System (INIS)

    Kristofferson, K.; O'Holleran, T.P.

    1996-01-01

    Previously, no mechanism existed that provided a systematic, interrelated view or national perspective of all high-level waste treatment and storage systems that the US Department of Energy manages. The impacts of budgetary constraints and repository availability on storage and treatment must be assessed against existing and pending negotiated milestones for their impact on the overall HLW system. This assessment can give DOE a complex-wide view of the availability of waste treatment and help project the time required to prepare HLW for disposal. Facilities, throughputs, schedules, and milestones were modeled to ascertain the treatment and storage systems resource requirements at the Hanford Site, Savannah River Site, Idaho National Engineering Laboratory, and West Valley Demonstration Project. The impacts of various treatment system availabilities on schedule and throughput were compared to repository readiness to determine the prudent application of resources. To assess the various impacts, the model was exercised against a number of plausible scenarios as discussed in this paper

  19. International high-level radioactive waste repositories

    International Nuclear Information System (INIS)

    Lin, W.

    1996-01-01

    Although nuclear technologies benefit everyone, the associated nuclear wastes are a widespread and rapidly growing problem. Nuclear power plants are in operation in 25 countries, and are under construction in others. Developing countries are hungry for electricity to promote economic growth; industrialized countries are eager to export nuclear technologies and equipment. These two ingredients, combined with the rapid shrinkage of worldwide fossil fuel reserves, will increase the utilization of nuclear power. All countries utilizing nuclear power produce at least a few tens of tons of spent fuel per year. That spent fuel (and reprocessing products, if any) constitutes high-level nuclear waste. Toxicity, long half-life, and immunity to chemical degradation make such waste an almost permanent threat to human beings. This report discusses the advantages of utilizing repositories for disposal of nuclear wastes

  20. High-level waste processing and disposal

    International Nuclear Information System (INIS)

    Crandall, J.L.; Krause, H.; Sombret, C.; Uematsu, K.

    1984-11-01

    Without reprocessing, spent LWR fuel itself is generally considered an acceptable waste form. With reprocessing, borosilicate glass canisters, have now gained general acceptance for waste immobilization. The current first choice for disposal is emplacement in an engineered structure in a mined cavern at a depth of 500-1000 meters. A variety of rock types are being investigated including basalt, clay, granite, salt, shale, and volcanic tuff. This paper gives specific coverage to the national high level waste disposal plans for France, the Federal Republic of Germany, Japan and the United States. The French nuclear program assumes prompt reprocessing of its spent fuels, and France has already constructed the AVM. Two larger borosilicate glass plants are planned for a new French reprocessing plant at La Hague. France plans to hold the glass canisters in near-surface storage for a forty to sixty year cooling period and then to place them into a mined repository. The FRG and Japan also plan reprocessing for their LWR fuels. Both are currently having some fuel reprocessed by France, but both are also planning reprocessing plants which will include waste vitrification facilities. West Germany is now constructing the PAMELA Plant at Mol, Belgium to vitrify high level reprocessing wastes at the shutdown Eurochemic Plant. Japan is now operating a vitrification mockup test facility and plans a pilot plant facility at the Tokai reprocessing plant by 1990. Both countries have active geologic repository programs. The United State program assumes little LWR fuel reprocessing and is thus primarily aimed at direct disposal of spent fuel into mined repositories. However, the US have two borosilicate glass plants under construction to vitrify existing reprocessing wastes

  1. High-performance metal mesh/graphene hybrid films using prime-location and metal-doped graphene.

    Science.gov (United States)

    Min, Jung-Hong; Jeong, Woo-Lim; Kwak, Hoe-Min; Lee, Dong-Seon

    2017-08-31

    We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer. We further improved the contact properties by adding a very thin Au mesh between the thick Ag mesh and the graphene layer to produce a dual-layered metal mesh. The Au mesh effectively doped the graphene layer to create a p-type electrode. Using Raman spectra, work function variations, and the transfer length method (TLM), we verified the effect of doping the graphene layer after depositing a very thin metal layer on the graphene layers. From our results, we suggest that the nature of the contact is an important criterion for improving the electrical and optical performance of hybrid TCLs, and the method of doping graphene layers provides new opportunities for solving contact issues in other semiconductor devices.

  2. Synthesis of biocompatible and highly photoluminescent nitrogen doped carbon dots from lime: Analytical applications and optimization using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Barati, Ali [Faculty of Chemistry, Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of); Shamsipur, Mojtaba, E-mail: mshamsipur@yahoo.com [Department of Chemistry, Razi University, Kermanshah (Iran, Islamic Republic of); Arkan, Elham [Nano Drug Delivery Research Center Kermanshah University of Medical Sciences, Kermanshah (Iran, Islamic Republic of); Hosseinzadeh, Leila [Novel Drug Delivery Research Center, Faculty of Pharmacy, Kermanshah University of Medical Sciences, Kermanshah (Iran, Islamic Republic of); Abdollahi, Hamid, E-mail: abd@iasbs.ac.ir [Faculty of Chemistry, Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of)

    2015-02-01

    Herein, a facile hydrothermal treatment of lime juice to prepare biocompatible nitrogen-doped carbon quantum dots (N-CQDs) in the presence of ammonium bicarbonate as a nitrogen source has been presented. The resulting N-CQDs exhibited excitation and pH independent emission behavior; with the quantum yield (QY) up to 40%, which was several times greater than the corresponding value for CQDs with no added nitrogen source. The N-CQDs were applied as a fluorescent probe for the sensitive and selective detection of Hg{sup 2+} ions with a detection limit of 14 nM. Moreover, the cellular uptake and cytotoxicity of N-CQDs at different concentration ranges from 0.0 to 0.8 mg/ml were investigated by using PC12 cells as a model system. Response surface methodology was used for optimization and systematic investigation of the main variables that influence the QY, including reaction time, reaction temperature, and ammonium bicarbonate weight. - Highlights: • High fluorescent N-doped CQDs from lime juice have been prepared. • Response surface methodology was used to optimize and model the main factors. • N-doped CQDs were used in the selective and sensitive detection of Hg(II). • The biocompatibility of prepared N-doped CQDs was conformed using PC12 cells.

  3. Synthesis and Characterization of Highly Sensitive Hydrogen (H2 Sensing Device Based on Ag Doped SnO2 Nanospheres

    Directory of Open Access Journals (Sweden)

    Zhaorui Lu

    2018-03-01

    Full Text Available In this paper, pure and Ag-doped SnO2 nanospheres were synthesized by hydrothermal method and characterized via X-ray powder diffraction (XRD, field emission scanning electron microscopy (FESEM, energy dispersive spectroscopy (EDS, and X-ray photoelectron spectra (XPS, respectively. The gas sensing performance of the pure, 1 at.%, 3 at.%, and 5 at.% Ag-doped SnO2 sensing devices toward hydrogen (H2 were systematically evaluated. The results indicated that compared with pure SnO2 nanospheres, Ag-doped SnO2 nanospheres could not only decrease the optimum working temperature but also significantly improve H2 sensing such as higher gas response and faster response-recovery. Among all the samples, the 3 at.% Ag-doped SnO2 showed the highest response 39 to 100 μL/L H2 at 300 °C. Moreover, its gas sensing mechanism was discussed, and the results will provide reference and theoretical guidance for the development of high-performance SnO2-based H2 sensing devices.

  4. Optimization of Electrochemical Performance of LiFePO4/C by Indium Doping and High Temperature Annealing

    Directory of Open Access Journals (Sweden)

    Ajay Kumar

    2017-10-01

    Full Text Available We have prepared nano-structured In-doped (1 mol % LiFePO4/C samples by sol–gel method followed by a selective high temperature (600 and 700 °C annealing in a reducing environment of flowing Ar/H2 atmosphere. The crystal structure, particle size, morphology, and magnetic properties of nano-composites were characterized by X-ray diffraction (XRD, scanning electron microsopy (SEM, transmission electron microscopy (TEM, and 57Fe Mössbauer spectroscopy. The Rietveld refinement of XRD patterns of the nano-composites were indexed to the olivine crystal structure of LiFePO4 with space group Pnma, showing minor impurities of Fe2P and Li3PO4 due to decomposition of LiFePO4. We found that the doping of In in LiFePO4/C nanocomposites affects the amount of decomposed products, when compared to the un-doped ones treated under similar conditions. An optimum amount of Fe2P present in the In-doped samples enhances the electronic conductivity to achieve a much improved electrochemical performance. The galvanostatic charge/discharge curves show a significant improvement in the electrochemical performance of 700 °C annealed In-doped-LiFePO4/C sample with a discharge capacity of 142 mAh·g−1 at 1 C rate, better rate capability (~128 mAh·g−1 at 10 C rate, ~75% of the theoretical capacity and excellent cyclic stability (96% retention after 250 cycles compared to other samples. This enhancement in electrochemical performance is consistent with the results of our electrochemical impedance spectroscopy measurements showing decreased charge-transfer resistance and high exchange current density.

  5. High-throughput combinatorial chemical bath deposition: The case of doping Cu (In, Ga) Se film with antimony

    Science.gov (United States)

    Yan, Zongkai; Zhang, Xiaokun; Li, Guang; Cui, Yuxing; Jiang, Zhaolian; Liu, Wen; Peng, Zhi; Xiang, Yong

    2018-01-01

    The conventional methods for designing and preparing thin film based on wet process remain a challenge due to disadvantages such as time-consuming and ineffective, which hinders the development of novel materials. Herein, we present a high-throughput combinatorial technique for continuous thin film preparation relied on chemical bath deposition (CBD). The method is ideally used to prepare high-throughput combinatorial material library with low decomposition temperatures and high water- or oxygen-sensitivity at relatively high-temperature. To check this system, a Cu(In, Ga)Se (CIGS) thin films library doped with 0-19.04 at.% of antimony (Sb) was taken as an example to evaluate the regulation of varying Sb doping concentration on the grain growth, structure, morphology and electrical properties of CIGS thin film systemically. Combined with the Energy Dispersive Spectrometer (EDS), X-ray Photoelectron Spectroscopy (XPS), automated X-ray Diffraction (XRD) for rapid screening and Localized Electrochemical Impedance Spectroscopy (LEIS), it was confirmed that this combinatorial high-throughput system could be used to identify the composition with the optimal grain orientation growth, microstructure and electrical properties systematically, through accurately monitoring the doping content and material composition. According to the characterization results, a Sb2Se3 quasi-liquid phase promoted CIGS film-growth model has been put forward. In addition to CIGS thin film reported here, the combinatorial CBD also could be applied to the high-throughput screening of other sulfide thin film material systems.

  6. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  7. Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

    Science.gov (United States)

    Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

    2018-07-01

    Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

  8. Nitrogen doped activated carbon from pea skin for high performance supercapacitor

    Science.gov (United States)

    Ahmed, Sultan; Ahmed, Ahsan; Rafat, M.

    2018-04-01

    In this work, nitrogen doped porous carbon (NDC) has been synthesized employing a facile two-step process. Firstly, carbon precursor (pea skin) was heated with melamine (acting as nitrogen source) followed by activation with KOH in different ratios. The dependence of porosity and nitrogen content on impregnation ratio was extensively studied. Other textural properties of prepared NDC sample were studied using standard techniques of material characterization. The electrochemical performance of NDC sample as an electrode was studied in two-electrode symmetric supercapacitor system. 1 M LiTFSI (lithium bis-trifluoromethanesulfonimide) solution in IL EMITFSI (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), was used as electrolyte. It was found that the fabricated supercapacitor cell offers high values of specific capacitance (141.1 F g‑1), specific energy (19.6 Wh kg‑1) and specific power (25.4 kW kg‑1) at current density of 1.3 A g‑1. More importantly, the fabricated supercapacitor cell shows capacitance retention of ∼75%, for more than 5000 cycles. The enhanced performance of NDC sample is primarily due to large surface area with favorable surface structure (contributing to double layer capacitance) and presence of nitrogen functionalities (contributing to pseudo-capacitance). Such important features make the synthesized NDC sample, an attractive choice for electrode material in high performance supercapacitor.

  9. High Performance Fe- and N- Doped Carbon Catalyst with Graphene Structure for Oxygen Reduction

    Science.gov (United States)

    Peng, Hongliang; Mo, Zaiyong; Liao, Shijun; Liang, Huagen; Yang, Lijun; Luo, Fan; Song, Huiyu; Zhong, Yiliang; Zhang, Bingqing

    2013-05-01

    Proton exchange membrane fuel cells are promising candidates for a clean and efficient energy conversion in the future, the development of carbon based inexpensive non-precious metal ORR catalyst has becoming one of the most attractive topics in fuel cell field. Herein we report a Fe- and N- doped carbon catalyst Fe-PANI/C-Mela with graphene structure and the surface area up to 702 m2 g-1. In 0.1 M HClO4 electrolyte, the ORR onset potential for the catalyst is high up to 0.98 V, and the half-wave potential is only 60 mV less than that of the Pt/C catalyst (Loadings: 51 μg Pt cm-2). The catalyst shows high stability after 10,000 cyclic voltammetry cycles. A membrane electrode assembly made with the catalyst as a cathode is tested in a H2-air single cell, the maximum power density reached ~0.33 W cm2 at 0.47 V.

  10. Deep levels in SiC:V by high temperature transport measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mitchel, W.C.; Perrin, R.; Goldstein, J.; Roth, M.; Ahoujja, M.; Smith, S.R.; Solomon, J.S.; Landis, G.; Jenny, J. [Air Force Materials Lab., Wright-Patterson AFB, OH (United States). Research and Technology Div.; Evwaraye, A.O. [Univ. of Dayton, Dayton, OH (United States); Hobgood, H.McD.; Augustine, G.; Balakrishna, V. [Northrop Grumman Corp., Science and Technology Center, Pittsburgh, PA (United States)

    1998-06-01

    Vanadium doped 6H and 4H SiC have been studied with high temperature Hall effect and resistivity, optical absorption and SIMS. The 6H samples were found to exhibit three thermal activation energies, 0.35 eV, 0.7 eV and near mid-gap. The 0.3 eV level is due to thermal ionization of residual uncompensated boron. We attribute the mid-gap level to thermal ionization of the vanadium donor level. The 0.7 eV activation is believed to be due to transfer of electrons from the ionized vanadium acceptor levels to the conduction band. These results suggest that the vanadium donor and acceptor levels are located at E{sub c}-1.42 eV and E{sub V} + 2.4 eV respectively. (orig.) 7 refs.

  11. Unusually high dispersion of nitrogen-doped carbon nanotubes in DNA solution.

    Science.gov (United States)

    Kim, Jin Hee; Kataoka, Masakazu; Fujisawa, Kazunori; Tojo, Tomohiro; Muramatsu, Hiroyuki; Vega-Díaz, Sofía M; Tristán-López, F; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2011-12-08

    The dispersibility in a DNA solution of bundled multiwalled carbon nanotubes (MWCNTs), having different chemical functional groups on the CNT sidewall, was investigated by optical spectroscopy. We observed that the dispersibility of nitrogen (N)-doped MWCNTs was significantly higher than that of pure MWCNTs and MWCNTs synthesized in the presence of ethanol. This result is supported by the larger amount of adsorbed DNA on N-doped MWCNTs, as well as by the higher binding energy established between nucleobases and the N-doped CNTs. Pure MWCNTs are dispersed in DNA solution via van der Waals and hydrophobic interactions; in contrast, the nitrogenated sites within N-doped MWCNTs provided additional sites for interactions that are important to disperse nanotubes in DNA solutions. © 2011 American Chemical Society

  12. Highly scalable, resonantly cladding-pumped, Er-doped fiber laser with record efficiency.

    Science.gov (United States)

    Dubinskii, M; Zhang, J; Ter-Mikirtychev, V

    2009-05-15

    We report the performance of a resonantly cladding-pumped, Yb-free, Er-doped fiber laser. We believe this is the first reported resonantly cladding-pumped fiber-Bragg-grating-based, Er-doped, large-mode-area (LMA) fiber laser. The laser, pumped by fiber-coupled InGaAsP/InP laser diode modules at 1,532.5 nm, delivers approximately 48 W of cw output at 1,590 nm. It is believed to be the highest power ever reported from a Yb-free Er-doped LMA fiber. This fully integrated laser also has the optical-to-optical efficiency of approximately 57%, to the best of our knowledge, the highest efficiency reported for cladding-pumped unidirectionally emitting Er-doped laser.

  13. Using rare earth doped thiosilicate phosphors in white light emitting LEDs: Towards low colour temperature and high colour rendering

    International Nuclear Information System (INIS)

    Smet, P.F.; Korthout, K.; Haecke, J.E. van; Poelman, D.

    2008-01-01

    Rare earth doped thiosilicates are promising materials for use in phosphor converted light emitting diodes (pcLEDs). These phosphors (including the hosts Ca 2 SiS 4 , BaSi 2 S 5 and Ba 2 SiS 4 in combination with Ce 3+ and/or Eu 2+ doping) cover the entire visible part of the spectrum, as the emission colour can be changed from deep blue to red. The photoluminescence emission spectrum and the overlap of the excitation spectrum with the emission of pumping LEDs is evaluated. The trade-off between high colour rendering and high electrical-to-optical power efficiency is discussed by simulation with both blue and UV emitting LEDs. Finally, a phosphor combination with low colour temperature (3000 K) and high colour rendering (CRI = 93) is proposed

  14. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  15. Tuning of cu doping on phase transition and high-field phase diagram of Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Shang, C. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Xia, Z.C., E-mail: xia9020@hust.edu.cn [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Wei, M.; Jin, Z.; Chen, B.R.; Shi, L.R. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Ouyang, Z.W. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Huang, S.; Xiao, G.L. [Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-10-15

    Pulsed high magnetic fields up to 52 T have been used in the systematic investigation of the magnetic properties of manganites Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3} (0≤x≤0.15). The Cu-doping dependent first-order metamagnetic transitions are observed below the charge ordering temperature, which is ascribed to both Cu-doping and field-induced collapse of the charge ordering with antiferromagnetic phase. Based on the magnetization and electrical transport measurements, a three-dimensional phase diagram with coordinate axis of temperature, magnetic field, and doping level has been obtained, in which the critical fields of the metamagnetic transitions increase with the increase in Cu content and decrease with increasing temperature. The experimental results confirm that Mn-site substitution with Cu destroys the Mn{sup 3+}–O{sup 2−}–Mn{sup 4+} bridges and weakens the double exchange interaction between Mn{sup 3+} and Mn{sup 4+} ions, which shows an obvious tuning effect on the metamagnetic transition under the external magnetic field. - Highlights: • Tuning effect of Cu-doping on the properties of Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3} was studied. • First-order metamagnetic transition was observed under high magnetic fields. • A phase diagram with temperature, magnetic field and doping level was obtained. • Cu-doping weakens the ferromagnetic coupling in Nd{sub 0.5}Sr{sub 0.5}Mn{sub 1−x}Cu{sub x}O{sub 3}.

  16. Polymer-mediated synthesis of a nitrogen-doped carbon aerogel with highly dispersed Pt nanoparticles for enhanced electrocatalytic activity

    International Nuclear Information System (INIS)

    2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Kim, Gil-Pyo; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Lee, Minzae; Lee, Yoon Jae; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Bae, Seongjun; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Song, Hyeon Dong; Song, In Kyu; 2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" data-affiliation=" (World Class University (WCU) Program of Chemical Convergence for Energy & Environment C2E2, School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul 151-742 (Korea, Republic of))" >Yi, Jongheop

    2016-01-01

    Highlights: • Highly dispersed Pt nanoparticles on N-doped carbon aerogel were synthesized for ORR. • Poly(ethyleneimine) was used as nitrogen source and as nucleation sites for Pt. • Precise discussion were conducted to clarify the effect of poly(ethyleneimine). • High Pt dispersion and N-doping results in superior electrocatalytic activity. - Abstract: A simple chemical process for the direct synthesis of a nitrogen (N)-doped carbon aerogel (NCA) with highly dispersed Pt nanoparticles via a poly(ethyleneimine) (PEI)-assisted strategy is described. A resorcinol-formaldehyde (RF) gel was treated with water soluble cationic PEI, which mainly functions as an anchoring site for metal ions. The functionalized PEI chains on the surface of the RF gel resulted in the unique formation of chemical complexes, with PtCl 6 2− anchored to the RF gel, and subsequent homogeneous metal nanoparticle growth. The abundant amino groups containing PEI grafted to the RF gel also allowed the nitrogen atoms to be incorporated into the carbon framework, which can directly be converted into a NCA. The spherical Pt nanoparticles in the resulting material (Pt/NCA) were highly dispersed on the surface of the NCA without any evidenced of agglomeration, even after a thermal annealing at 900 °C. Compared with a Pt/CA synthesized by a conventional reduction method, the Pt/NCA showed enhanced electrochemical performance with a high electrochemically active surface area (191.1 cm 2 g −1 ) and electrocatalytic activity (V onset = 0.95 V vs. RHE) with respect to oxygen reduction. The superior electrocatalytic activities of the Pt/NCA can be attributed to the synergistic effect of the highly dispersed Pt nanoparticles and the N-doped carbon supports that were prepared using the PEI-assisted strategy. The findings reported herein suggest that the use of PEI can be effectively extended to broad applications that require the homogeneous deposition of metal nanoparticles.

  17. Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

    KAUST Repository

    Yao, Kexin

    2017-06-24

    It is notably challenging to fabricate heavily heteroatom-doped porous carbonaceous materials with narrow ultramicropore size distributions for highly effective mixed-gas separation. In this study, new carbon-based materials with narrow ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1-650) possesses the highest ultramicropores content (98%) and large N content (12 at%) and demonstrates a very high CH and CO capacity, as well as a low N uptake under ambient conditions. The extraordinarily high CH/N and CO/N selectivities correlate with both the ideal adsorption solution theory (IAST) method and performed dynamic separation experiments (breakthrough experiments). The results reported in this study far exceed the CH/N and CO/N selectivities of previously reported carbon-based adsorbents including various nitrogen-doped ones. These results are believed to be associated with the unusually high N content, as well as the suitably narrow ultramicropore size distribution. This report introduces a new pathway to design porous absorbents with precisely controlled ultramicropores for gas separation.

  18. High performance supercapacitor using N-doped graphene prepared via supercritical fluid processing with an oxime nitrogen source

    International Nuclear Information System (INIS)

    Balaji, S. Suresh; Elavarasan, A.; Sathish, M.

    2016-01-01

    Graphical abstract: N-doped graphene prepared via supercritical fluid processing with oxime nitrogen source (DMG) showed enhanced performance in electrochemical supercapacitor application. A maximum specific capacitance of 286 F g"−"1 at a current density of 0.5 A/g was achieved with a high specific capacity retention of 98% after 1000 cycles at 5 A/g. - Highlights: • N-functionalised graphene synthesized via supercritical fluid processing. • DMG, an oxime based nitrogen precursor. • Maximum specific capacitance of 286 F/g at 0.5 A/g in aqueous solution. • Pyridinic as well as quarternary nitrogen for enhanced capacitance. - Abstract: Heteroatom doped graphene has been proved for its promising applications in electrochemical energy storage systems. Here, nitrogen (N) doped graphene was prepared via two different techniques namely supercritical fluid assisted processing and hydrothermal heat treatment using dimethylglyoxime (DMG) as an oxime nitrogen precursor. The FT-IR and Raman spectra showed the N-containing functional group in the graphene. The XRD analysis revealed the complete reduction of graphene oxide during the supercritical fluid processing. The elemental analysis and X-ray photoelectron spectroscopy revealed the amount and nature of N-doping in the graphene, respectively. The surface morphology and physical nature of the samples were analyzed using scanning and transmission electron microscopic analysis. The electrochemical performance of prepared electrode materials was evaluated using cyclic voltammetry, galvanostatic charge-discharge analysis and electrochemical impedance spectroscopy. The N-doped graphene prepared via supercritical fluid assisted processing exhibit enhanced capacitive behaviour with a maximum specific capacitance of 286 F g"−"1 at a current density of 0.5 A/g. The cycling studies showed 98% specific capacity retention with 100% coulombic efficiency over 1000 cycles at 5 A/g. The enhanced specific capacitance of N-doped

  19. Highly active Ni/Y-doped ZrO{sub 2} catalysts for CO{sub 2} methanation

    Energy Technology Data Exchange (ETDEWEB)

    Takano, H., E-mail: takano_hi@hitachizosen.co.jp [Hitachi Zosen Corporation, Kashiwa, 277-8515 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Kirihata, Y.; Izumiya, K.; Kumagai, N. [Hitachi Zosen Corporation, Kashiwa, 277-8515 (Japan); Habazaki, H., E-mail: habazaki@eng.hokudai.ac.jp [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Division of Applied Chemistry & Frontier Chemistry Center, Faculty of Engineering, Hokkaido University, Sapporo, 060-8628 (Japan); Hashimoto, K. [Tohoku Institute of Technology, Sendai, 277-8515 (Japan)

    2016-12-01

    Highlights: • The Ni/Y-doped ZrO{sub 2} catalysts show highly catalytic activity for CO{sub 2} methanation. • Bidentate carbonate is a major adsorption spice on the Ni/Y-doped ZrO{sub 2} catalysts. • The oxide support of t-ZrO{sub 2} and/or c-ZrO{sub 2} with oxygen vacancies plays a key role. - Abstract: The catalytic methanation of CO{sub 2} was carried out on Ni catalysts supported on Y-doped ZrO{sub 2} with various Y{sup 3+} concentrations and Ni/(Zr + Y) molar ratio = 1. The catalysts were characterized by X-ray diffraction, scanning transmission electron microscopy, specific surface area, temperature-programmed desorption of CO{sub 2}, and temperature-programmed reaction. In addition, operando diffuse-reflectance infrared Fourier-transform spectroscopy (DRIFT) was used to identify the adsorbed reaction intermediate. Catalysts supported on Y-doped ZrO{sub 2} show higher catalytic activity than the catalyst on Y-free ZrO{sub 2} with a monoclinic ZrO{sub 2} phase. The catalytic activity is also dependent upon the Y{sup 3+} concentration, and the highest activity was obtained for the catalyst with a Y/(Zr + Y) molar ratio of 0.333, which consists mainly of fcc Ni and cubic ZrO{sub 2} phase. Y{sup 3+} doping into ZrO{sub 2} introduces oxygen vacancies, which play an important role in enhancing the catalytic activity. The operando DRIFT study reveals that a CO adsorption intermediate is absent, and bidentate carbonate is an important intermediate for CH{sub 4} formation.

  20. Band structure of one-dimensional doped photonic crystal with three level atoms using the Fresnel coefficients method

    Science.gov (United States)

    Jafari, A.; Rahmat, A.; Bakkeshizadeh, S.

    2018-01-01

    We consider a one-dimensional photonic crystal (1DPC) composed of double-layered dielectrics. Electric permittivity and magnetic permeability of this crystal depends on the incident electromagnetic wave frequency. We suppose that three level atoms have been added to the second layer of each dielectric and this photonic crystal (PC) has been doped. These atoms can be added to the layer with different rates. In this paper, we have calculated and compared the band structure of the mentioned PC considering the effect of added atoms to the second layer with different rates through the Fresnel coefficients method. We find out that according to the effective medium theory, the electric permittivity of the second layer changes. Also the band structure of PC for both TE and TM polarizations changes, too. The width of bandgaps related to “zero averaged refractive index” and “Bragg” increases. Moreover, new gap branches appear in new frequencies at both TE and TM polarizations. In specific state, two branches of “zero permittivity” gap appear in the PC band structure related to TM polarization. With increasing the amount of the filling rate of total volume with three level atoms, we observe a lot of changes in the PC band structure.

  1. Spatially Correlated, Single Nanomaterial-Level Structural and Optical Profiling of Cu-Doped ZnO Nanorods Synthesized via Multifunctional Silicides

    Directory of Open Access Journals (Sweden)

    Johnson Truong

    2018-04-01

    Full Text Available We demonstrate a straightforward and effective method to synthesize vertically oriented, Cu-doped ZnO nanorods (NRs using a novel multipurpose platform of copper silicide nanoblocks (Cu3Si NBs preformed laterally in well-defined directions on Si. The use of the surface-organized Cu3Si NBs for ZnO NR growth successfully results in densely assembled Cu-doped ZnO NRs on each NB platform, whose overall structures resemble thick bristles on a brush head. We show that Cu3Si NBs can uniquely serve as a catalyst for ZnO NRs, a local dopant source of Cu, and a prepatterned guide to aid the local assembly of the NRs on the growth substrate. We also ascertain the crystalline structures, optical properties, and spectroscopic signatures of the Cu-doped ZnO NRs produced on the NBs, both at each module of NRs/NB and at their ensemble level. Subsequently, we determine their augmented properties relative to the pristine form of undoped ZnO NRs and the source material of Cu3Si NBs. We provide spatially correlated structural and optical data for individual modules of Cu-doped ZnO NRs assembled on a Cu3Si NB by resolving them along the different positions on the NB. Ensemble-averaged versus individual behaviors of Cu-doped ZnO NRs on Cu3Si NBs are then compared. We further discuss the potential impact of such ZnO-derived NRs on their relatively unexplored biological and biomedical applications. Our efforts will be particularly useful when exploiting each integrated module of self-aligned, Cu-doped ZnO NRs on a NB as a discretely addressable, active element in solid-state sensors and miniaturized luminescent bioprobes.

  2. High-level radioactive waste management

    International Nuclear Information System (INIS)

    Schneider, K.J.; Liikala, R.C.

    1974-01-01

    High-level radioactive waste in the U.S. will be converted to an encapsulated solid and shipped to a Federal repository for retrievable storage for extended periods. Meanwhile the development of concepts for ultimate disposal of the waste which the Federal Government would manage is being actively pursued. A number of promising concepts have been proposed, for which there is high confidence that one or more will be suitable for long-term, ultimate disposal. Initial evaluations of technical (or theoretical) feasibility for the various waste disposal concepts show that in the broad category, (i.e., geologic, seabed, ice sheet, extraterrestrial, and transmutation) all meet the criteria for judging feasibility, though a few alternatives within these categories do not. Preliminary cost estimates show that, although many millions of dollars may be required, the cost for even the most exotic concepts is small relative to the total cost of electric power generation. For example, the cost estimates for terrestrial disposal concepts are less than 1 percent of the total generating costs. The cost for actinide transmutation is estimated at around 1 percent of generation costs, while actinide element disposal in space is less than 5 percent of generating costs. Thus neither technical feasibility nor cost seems to be a no-go factor in selecting a waste management system. The seabed, ice sheet, and space disposal concepts face international policy constraints. The information being developed currently in safety, environmental concern, and public response will be important factors in determining which concepts appear most promising for further development

  3. High Performance of N-Doped Graphene with Bubble-like Textures for Supercapacitors.

    Science.gov (United States)

    Zhang, Shuo; Sui, Lina; Kang, Hongquan; Dong, Hongzhou; Dong, Lifeng; Yu, Liyan

    2018-02-01

    Nitrogen-doped graphene (NG) with wrinkled and bubble-like texture is fabricated by a thermal treatment. Especially, a novel sonication-assisted pretreatment with nitric acid is used to further oxidize graphene oxide and its binding with melamine molecules. There are many bubble-like nanoflakes with a dimension of about 10 nm appeared on the undulated graphene nanosheets. The bubble-like texture provides more active sites for effective ion transport and reversible capacitive behavior. The specific surface area of NG (5.03 at% N) can reach up to 438.7 m 2 g -1 , and the NG electrode demonstrates high specific capacitance (481 F g -1 at 1 A g -1 , four times higher than reduced graphene oxide electrode (127.5 F g -1 )), superior cycle stability (the capacitance retention of 98.9% in 2 m KOH and 99.2% in 1 m H 2 SO 4 after 8000 cycles), and excellent energy density (42.8 Wh kg -1 at power density of 500 W kg -1 in 2 m KOH aqueous electrolyte). The results indicate the potential use of NG as graphene-based electrode material for energy storage devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shaoyuan [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Ma, Wenhui, E-mail: mwhsilicon@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Zhou, Yang, E-mail: zhouyangnano@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Chen, Xiuhua [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Ma, Mingyu [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Xiao, Yongyin [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Xu, Yaohui [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2014-02-15

    Porous silicon (PS) was prepared by anodizing highly doped p-type silicon in the solution of H{sub 2}O/ethanol/HF. The effects of key fabrication parameters (HF concentration, etching time and current density) on the nanostructure of PS were carefully investigated by AFM, SEM and TEM characterization. According to the experimental results, a more full-fledged model was developed to explain the crack behaviors on PS surface. The photoluminescence (PL) of resulting PS was studied by a fluorescence spectrophotometer and the results show that PL peak positions shift to shorter wavelength with the increasing current density, anodisation time and dilution of electrolyte. The PL spectra blue shift of the sample with higher porosity is confirmed by HRTEM results that the higher porosity results in smaller Si nanocrystals. A linear model (λ{sub PL/nm}=620.3–0.595P, R=0.905) was established to describe the correlation between PL peak positions and porosity of PS. -- Highlights: • The effect of fabrication parameter on the nanostructure of PS is investigated. • The influence of nanostructure on the photoluminescence behaviors is studied • A full-fledged model for expounding the crack behaviors of PS is presented. • The correlation between the porosity and PL peak blue shift is described by a linear model.

  5. PtRu nanoparticles embedded in nitrogen doped carbon with highly stable CO tolerance and durability

    Science.gov (United States)

    Ling, Ying; Yang, Zehui; Yang, Jun; Zhang, Yunfeng; Zhang, Quan; Yu, Xinxin; Cai, Weiwei

    2018-02-01

    As is well known, the lower durability and sluggish methanol oxidation reaction (MOR) of PtRu alloy electrocatalyst blocks the commercialization of direct methanol fuel cells (DMFCs). Here, we design a new PtRu electrocatalyst, with highly stable CO tolerance and durability, in which the PtRu nanoparticles are embedded in nitrogen doped carbon layers derived from carbonization of poly(vinyl pyrrolidone). The newly fabricated electrocatalyst exhibits no loss in electrochemical surface area (ECSA) and MOR activity after potential cycling from 0.6-1.0 V versus reversible hydrogen electrode, while commercial CB/PtRu retains only 50% of its initial ECSA. Meanwhile, due to the same protective layers, the Ru dissolution is decelerated, resulting in stable CO tolerance. Methanol oxidation reaction (MOR) testing indicates that the activity of newly fabricated electrocatalyst is two times higher than that of commercial CB/PtRu, and the fuel cell performance of the embedded PtRu electrocatalyst was comparable to that of commercial CB/PtRu. The embedded PtRu electrocatalyst is applicable in real DMFC operation. This study offers important and useful information for the design and fabrication of durable and CO tolerant electrocatalysts.

  6. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

    Science.gov (United States)

    Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

    2018-01-01

    We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

  7. High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2013-02-15

    Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

  8. Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

    Science.gov (United States)

    Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

    2014-05-01

    We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

  9. An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

    Directory of Open Access Journals (Sweden)

    An-Jye Tzou

    2016-06-01

    Full Text Available This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT with a 1702 V breakdown voltage (BV and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.

  10. Record power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

    DEFF Research Database (Denmark)

    Jain, Deepak; Sidharthan, R.; Moselund, Peter M.

    2016-01-01

    the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source...... based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America......We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped...

  11. Novel proton conducting polymer electrolytes based on polyparabanic acid doped with H 3PO 4 for high temperature fuel cell

    Science.gov (United States)

    Aihara, Yuichi; Sonai, Atsuo

    Three novel proton conducting polymer electrolytes based on polyparabanic acid doped with H 3PO 4 were synthesized and their use in high temperature fuel cells characterized. The precursor polymers, PMD-Im, POD-Im and PDMDP-Im, were synthesized by cyclization polymerization of diisocynanates. After doping with H 3PO 4, the ionic conductivity and the thermal degradation were studied by using the AC impedance method and thermal gravimetric analysis, respectively. These membranes showed high ionic conductivity of the order of 10 -2 S cm -1 at 423 K with good thermal stability. Their application to fuel cells was demonstrated and polarization curves were obtained at 423 K were obtained without humidification.

  12. Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Purwanto, Agus, E-mail: Aguspur@uns.ac.id [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia); Widiyandari, Hendri [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Jl. Prof. Dr. Soedarto, Tembalang, Semarang 50275 (Indonesia); Jumari, Arif [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia)

    2012-01-01

    A high-performance fluorine-doped tin oxide (FTO) film was fabricated by flame-assisted spray deposition method. By varying the NH{sub 4}F doping concentration, the optimal concentration was established as 8 at.%. X-ray diffractograms confirmed that the as-grown FTO film was tetragonal SnO{sub 2}. In addition, the FTO film was comprised of nano-sized grains ranging from 40 to 50 nm. The heat-treated FTO film exhibited a sheet resistance of 21.8 {Omega}/{open_square} with an average transmittance of 81.9% in the visible region ({lambda} = 400-800 nm). The figures of merit shows that the prepared FTO film can be used for highly efficient dye-sensitized solar cells electrodes.

  13. Vitrification of high-level liquid wastes

    International Nuclear Information System (INIS)

    Varani, J.L.; Petraitis, E.J.; Vazquez, Antonio.

    1987-01-01

    High-level radioactive liquid wastes produced in the fuel elements reprocessing require, for their disposal, a preliminary treatment by which, through a series of engineering barriers, the dispersion into the biosphere is delayed by 10 000 years. Four groups of compounds are distinguished among a great variety of final products and methods of elaboration. From these, the borosilicate glasses were chosen. Vitrification experiences were made at a laboratory scale with simulated radioactive wastes, employing different compositions of borosilicate glass. The installations are described. A series of tests were carried out on four basic formulae using always the same methodology, consisting of a dry mixture of the vitreous matrix's products and a dry simulated mixture. Several quality tests of the glasses were made 1: Behaviour in leaching following the DIN 12 111 standard; 2: Mechanical resistance; parameters related with the facility of the different glasses for increasing their surface were studied; 3: Degree of devitrification: it is shown that devitrification turns the glasses containing radioactive wastes easily leachable. From all the glasses tested, the composition SiO 2 , Al 2 O 3 , B 2 O 3 , Na 2 O, CaO shows the best retention characteristics. (M.E.L.) [es

  14. Ocean disposal of high level radioactive waste

    International Nuclear Information System (INIS)

    1983-01-01

    This study confirms, subject to limitations of current knowledge, the engineering feasibility of free fall penetrators for High Level Radioactive Waste disposal in deep ocean seabed sediments. Restricted sediment property information is presently the principal bar to an unqualified statement of feasibility. A 10m minimum embedment and a 500 year engineered barrier waste containment life are identified as appropriate basic penetrator design criteria at this stage. A range of designs are considered in which the length, weight and cross section of the penetrator are varied. Penetrators from 3m to 20m long and 2t to 100t in weight constructed of material types and thicknesses to give a 500 year containment life are evaluated. The report concludes that the greatest degree of confidence is associated with performance predictions for 75 to 200 mm thick soft iron and welded joints. A range of lengths and capacities from a 3m long single waste canister penetrator to a 20m long 12 canister design are identified as meriting further study. Estimated embedment depths for this range of penetrator designs lie between 12m and 90m. Alternative manufacture, transport and launch operations are assessed and recommendations are made. (author)

  15. Vitrification of high level wastes in France

    International Nuclear Information System (INIS)

    Sombret, C.

    1984-02-01

    A brief historical background of the research and development work conducted in France over 25 years is first presented. Then, the papers deals with the vitrification at (1) the UP1 reprocessing plant (Marcoule) and (2) the UP2 and UP3 reprocessing plants (La Hague). 1) The properties of glass required for high-level radioactive waste vitrification are recalled. The vitrification process and facility of Marcoule are presented. (2) The average characteristics (chemical composition, activity) of LWR fission product solution are given. The glass formulations developed to solidify LWR waste solution must meet the same requirements as those used in the UP1 facility at Marcoule. Three important aspects must be considered with respect to the glass fabrication process: corrosiveness of the molten glass with regard to metals, viscosity of the molten glass, and, volatization during glass fabrication. The glass properties required in view of interim storage and long-term disposal are then largely developed. Two identical vitrification facilities are planned for the site: T7, to process the UP2 throughput, and T7 for the UP3 plant. A prototype unit was built and operated at Marcoule

  16. High-level nuclear waste disposal

    International Nuclear Information System (INIS)

    Burkholder, H.C.

    1985-01-01

    The meeting was timely because many countries had begun their site selection processes and their engineering designs were becoming well-defined. The technology of nuclear waste disposal was maturing, and the institutional issues arising from the implementation of that technology were being confronted. Accordingly, the program was structured to consider both the technical and institutional aspects of the subject. The meeting started with a review of the status of the disposal programs in eight countries and three international nuclear waste management organizations. These invited presentations allowed listeners to understand the similarities and differences among the various national approaches to solving this very international problem. Then seven invited presentations describing nuclear waste disposal from different perspectives were made. These included: legal and judicial, electric utility, state governor, ethical, and technical perspectives. These invited presentations uncovered several issues that may need to be resolved before high-level nuclear wastes can be emplaced in a geologic repository in the United States. Finally, there were sixty-six contributed technical presentations organized in ten sessions around six general topics: site characterization and selection, repository design and in-situ testing, package design and testing, disposal system performance, disposal and storage system cost, and disposal in the overall waste management system context. These contributed presentations provided listeners with the results of recent applied RandD in each of the subject areas

  17. Decontamination of high-level waste canisters

    International Nuclear Information System (INIS)

    Nesbitt, J.F.; Slate, S.C.; Fetrow, L.K.

    1980-12-01

    This report presents evaluations of several methods for the in-process decontamination of metallic canisters containing any one of a number of solidified high-level waste (HLW) forms. The use of steam-water, steam, abrasive blasting, electropolishing, liquid honing, vibratory finishing and soaking have been tested or evaluated as potential techniques to decontaminate the outer surfaces of HLW canisters. Either these techniques have been tested or available literature has been examined to assess their applicability to the decontamination of HLW canisters. Electropolishing has been found to be the most thorough method to remove radionuclides and other foreign material that may be deposited on or in the outer surface of a canister during any of the HLW processes. Steam or steam-water spraying techniques may be adequate for some applications but fail to remove all contaminated forms that could be present in some of the HLW processes. Liquid honing and abrasive blasting remove contamination and foreign material very quickly and effectively from small areas and components although these blasting techniques tend to disperse the material removed from the cleaned surfaces. Vibratory finishing is very capable of removing the bulk of contamination and foreign matter from a variety of materials. However, special vibratory finishing equipment would have to be designed and adapted for a remote process. Soaking techniques take long periods of time and may not remove all of the smearable contamination. If soaking involves pickling baths that use corrosive agents, these agents may cause erosion of grain boundaries that results in rough surfaces

  18. Nickel doped cobalt sulfide as a high performance counter electrode for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hee-Je; Kim, Chul-Woo; Punnoose, Dinah; Gopi, Chandu V.V.M.; Kim, Soo-Kyoung; Prabakar, K.; Rao, S. Srinivasa, E-mail: srinu.krs@gmail.com

    2015-02-15

    Graphical abstract: - Highlights: • First ever employment of Ni doped CoS{sub 2} counter electrode as a replacement of Pt counter electrode. • Efficiency of 5.50% was achieved using Ni doped CoS{sub 2} counter electrode in contrast to 5.21% efficiency obtained using Pt electrode. • Dependency of efficiency on Ni dopant reported for the first time. • Cost effective chemical bath deposition was used for the fabrication of the counter electrode. - Abstract: The use of cells based on cobalt sulfide (CoS{sub 2}) and nickel sulfide (NiS) has found a steep upsurge in solar cell applications and as a substitute for conventional Pt-based cells owing to their low cost, low-temperature processing ability, and promising electro-catalytic activity. In this study, CoS{sub 2}, NiS and Ni-doped CoS{sub 2} nanoparticles were incorporated on a fluorine-doped tin oxide (FTO) substrate by simple chemical bath deposition (CBD). The surface morphology of the obtained films was analyzed by scanning electron microscope. Tafel polarization, electrochemical impedance spectroscopy and cyclic voltammograms of the Ni-doped CoS{sub 2} (Ni 15%) films indicated enhanced electro-catalytic activity for I{sub 3}{sup −} reduction in dye sensitized solar cells (DSSCs) compared to a Pt CE. The Ni-doped CoS{sub 2} CE also showed an impressive photovoltaic conversion efficiency of 5.50% under full sunlight illumination (100 mW cm{sup −2}, AM 1.5 G), exceeding that of DSSCs using a Pt CE (5.21%). We show that the highest conversion efficiency mainly depends on the charge transfer resistance and adequate Ni ion doping with CoS{sub 2} nanoparticles.

  19. Potential thermoelectric performance of hole-doped Cu2O

    International Nuclear Information System (INIS)

    Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

    2013-01-01

    High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

  20. Neutron Detection Utilizing Gadolinium Doped Hafnium Oxide Films

    National Research Council Canada - National Science Library

    Blasy, Bryan D

    2008-01-01

    ... retains monoclinic local symmetery for all levels of doping. Current as a function of voltage experiments identified the films as having poor diode characteristics with high leakage current in the forward bias region...

  1. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

    Science.gov (United States)

    Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

    2011-10-01

    We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

  2. Advanced Sulfur Cathode Enabled by Highly Crumpled Nitrogen-Doped Graphene Sheets for High-Energy-Density Lithium-Sulfur Batteries.

    Science.gov (United States)

    Song, Jiangxuan; Yu, Zhaoxin; Gordin, Mikhail L; Wang, Donghai

    2016-02-10

    Herein, we report a synthesis of highly crumpled nitrogen-doped graphene sheets with ultrahigh pore volume (5.4 cm(3)/g) via a simple thermally induced expansion strategy in absence of any templates. The wrinkled graphene sheets are interwoven rather than stacked, enabling rich nitrogen-containing active sites. Benefiting from the unique pore structure and nitrogen-doping induced strong polysulfide adsorption ability, lithium-sulfur battery cells using these wrinkled graphene sheets as both sulfur host and interlayer achieved a high capacity of ∼1000 mAh/g and exceptional cycling stability even at high sulfur content (≥80 wt %) and sulfur loading (5 mg sulfur/cm(2)). The high specific capacity together with the high sulfur loading push the areal capacity of sulfur cathodes to ∼5 mAh/cm(2), which is outstanding compared to other recently developed sulfur cathodes and ideal for practical applications.

  3. Carbon-doped SnS2 nanostructure as a high-efficiency solar fuel catalyst under visible light.

    Science.gov (United States)

    Shown, Indrajit; Samireddi, Satyanarayana; Chang, Yu-Chung; Putikam, Raghunath; Chang, Po-Han; Sabbah, Amr; Fu, Fang-Yu; Chen, Wei-Fu; Wu, Chih-I; Yu, Tsyr-Yan; Chung, Po-Wen; Lin, M C; Chen, Li-Chyong; Chen, Kuei-Hsien

    2018-01-12

    Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an L-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS 2 (SnS 2 -C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO 2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS 2 lattice, resulting in different photophysical properties as compared with undoped SnS 2 . This SnS 2 -C photocatalyst significantly enhances the CO 2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS 2 -C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO 2 reduction under visible light, where the in situ carbon-doped SnS 2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.

  4. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  5. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  6. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

    Science.gov (United States)

    Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

    2013-01-22

    In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

  7. High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens.

    Science.gov (United States)

    Liu, Baiquan; Nie, Han; Lin, Gengwei; Hu, Shiben; Gao, Dongyu; Zou, Jianhua; Xu, Miao; Wang, Lei; Zhao, Zujin; Ning, Honglong; Peng, Junbiao; Cao, Yong; Tang, Ben Zhong

    2017-10-04

    Doping-free white organic light-emitting diodes (DF-WOLEDs) have aroused research interest because of their simple properties. However, to achieve doping-free hybrid WOLEDs (DFH-WOLEDs), avoiding aggregation-caused quenching is challenging. Herein, blue luminogens with aggregation-induced emission (AIE) characteristics, for the first time, have been demonstrated to develop DFH-WOLEDs. Unlike previous DFH-WOLEDs, both thin (10 nm) AIE luminogen (AIEgen) can be used for devices, enhancing the flexibility. Two-color devices show (i) pure-white emission, (ii) high CRI (85), and (iii) high efficiency. Particularly, 19.0 lm W 1- is the highest for pure-white DF-WOLEDs, while 35.0 lm W 1- is the best for two-color hybrid WOLEDs with CRI ≥ 80. A three-color DFH-WOLED shows broad color-correlated temperature span (2301-11628 K), (i) the first sunlight-like OLED (2500-8000 K) operating at low voltages, (ii) the broadest span among sunlight-like OLED, and (iii) possesses comparable efficiency with the best doping counterpart. Another three-color DFH-WOLED exhibits CRI > 90 at ≥3000 cd m -2 , (i) the first DF-WOLED with CRI ≥ 90 at high luminances, and (ii) the CRI (92.8) is not only the highest among AIE-based WOLEDs but also the highest among DF-WOLEDs. Such findings may unlock an alternative concept to develop DFH-WOLEDs.

  8. Structure and bulk modulus of Ln-doped UO{sub 2} (Ln = La, Nd) at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Rittman, Dylan R., E-mail: drittman@stanford.edu [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Park, Sulgiye; Tracy, Cameron L. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Zhang, Lei [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis, CA 95616 (United States); Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616 (United States); Palomares, Raul I.; Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Navrotsky, Alexandra [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis, CA 95616 (United States); Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616 (United States); Mao, Wendy L. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

    2017-07-15

    The structure of lanthanide-doped uranium dioxide, Ln{sub x}U{sub 1-x}O{sub 2-0.5x+y} (Ln = La, Nd), was investigated at pressures up to ∼50–55 GPa. Samples were synthesized with different lanthanides at different concentrations (x ∼ 0.2 and 0.5), and all were slightly hyperstoichiometric (y ∼ 0.25–0.4). In situ high-pressure synchrotron X-ray diffraction was used to investigate their high-pressure phase behavior and determine their bulk moduli. All samples underwent a fluorite-to-cotunnite phase transformation with increasing pressure. The pressure of the phase transformation increased with increasing hyperstoichiometry, which is consistent with results from previous computational simulations. Bulk moduli are inversely proportional to both the ionic radius of the lanthanide and its concentration, as quantified using a weighted cationic radius ratio. This trend was found to be consistent with the behavior of other elastic properties measured for Ln-doped UO{sub 2}, such as Young's modulus. - Highlights: •Ln-doped UO{sub 2} transforms from fluorite to cotunnite at high pressure. •Transition pressure increases with increasing hyperstoichiometry. •Bulk modulus decreases with increasing Ln-dopant radius and concentration.

  9. L-lactic acid and sodium p-toluenesulfonate co-doped polypyrrole for high performance cathode in sodium ion battery

    Science.gov (United States)

    Liao, Qishu; Hou, Hongying; Liu, Xianxi; Yao, Yuan; Dai, Zhipeng; Yu, Chengyi; Li, Dongdong

    2018-04-01

    In this work, polypyrrole (PPy) was co-doped with L-lactic acid (LA) and sodium p-toluenesulfonate (TsONa) for high performance cathode in sodium ion battery (SIB) via facile one-step electropolymerization on Fe foil. The as-synthesized LA/TsONa co-doped PPy cathode was investigated in terms of scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), galvanostatic charge/discharge and cyclic voltammetry (CV). The results suggested that some oval-bud-like LA/TsONa co-doped PPy particles did form and tightly combine with the surface of Fe foil; furthermore, LA/TsONa co-doped PPy cathode also delivered higher electrochemical performances than TsONa mono-doped PPy cathode. For example, the initial specific discharge capacity was as high as about 124 mAh/g, and the reversible specific capacity still maintained at about 110 mAh/g even after 50 cycles, higher than those of TsONa mono-doped PPy cathode. The synergy effect of multi components of LA/TsONa co-doped PPy cathode should be responsible for high electrochemical performances.

  10. Effect of manganese doping on PIN-PMN-PT single crystals for high power applications

    Science.gov (United States)

    Sahul, Raffi

    of the Mn:PIN-PMN-PT single crystal to understand the monodomain properties and the orientation dependence of dielectric, elastic, and piezoelectric properties. Domain averaging and matrix transformation was performed with the monodomain data to calculate 4R data and compare with that of experimental 4R data. Orientation dependence of the properties is also presented to understand the crystallographic directions that are best suited for the various applications. The high sensitivity of PMN-PT and the high Qm of Mn:PIN-PMN-PT provide designers with soft and hard piezoelectric material choices in the relaxor-PT single crystals family. While much work has been done on PMN-PT crystals, research efforts on the Mn:PIN-PMN-PT crystals are limited. Investigation of the Qm for Mn-doped crystals under high power drive conditions is essential for the practical application of these crystals for devices. High power characteristics of the Mn:PIN-PMN-PT single crystals were measured with emphasis on specific modes (transverse mode, d32, and face shear mode, d36') based on a constant vibration velocity method using a high power characterization system (HiPoCs), and the degradation of Qm as a function of vibration velocity was studied in order to understand the self heating behavior and device limitations. Practical devices that are useful for various applications were designed and performance of these prototype devices was quantitatively evaluated. This thesis work provides a concrete advancement in the understanding of doped ternary relaxor-PT ferroelectric single crystals and the influence of their domain engineered configurations on their properties. The emphasis is on vibration modes related to piezoelectric vibrators with the multi-domain single crystals having macroscopic mm2 symmetry. In the last chapter, limitations and future perspectives are also discussed.

  11. DEFENSE HIGH LEVEL WASTE GLASS DEGRADATION

    International Nuclear Information System (INIS)

    Ebert, W.

    2001-01-01

    The purpose of this Analysis/Model Report (AMR) is to document the analyses that were done to develop models for radionuclide release from high-level waste (HLW) glass dissolution that can be integrated into performance assessment (PA) calculations conducted to support site recommendation and license application for the Yucca Mountain site. This report was developed in accordance with the ''Technical Work Plan for Waste Form Degradation Process Model Report for SR'' (CRWMS M andO 2000a). It specifically addresses the item, ''Defense High Level Waste Glass Degradation'', of the product technical work plan. The AP-3.15Q Attachment 1 screening criteria determines the importance for its intended use of the HLW glass model derived herein to be in the category ''Other Factors for the Postclosure Safety Case-Waste Form Performance'', and thus indicates that this factor does not contribute significantly to the postclosure safety strategy. Because the release of radionuclides from the glass will depend on the prior dissolution of the glass, the dissolution rate of the glass imposes an upper bound on the radionuclide release rate. The approach taken to provide a bound for the radionuclide release is to develop models that can be used to calculate the dissolution rate of waste glass when contacted by water in the disposal site. The release rate of a particular radionuclide can then be calculated by multiplying the glass dissolution rate by the mass fraction of that radionuclide in the glass and by the surface area of glass contacted by water. The scope includes consideration of the three modes by which water may contact waste glass in the disposal system: contact by humid air, dripping water, and immersion. The models for glass dissolution under these contact modes are all based on the rate expression for aqueous dissolution of borosilicate glasses. The mechanism and rate expression for aqueous dissolution are adequately understood; the analyses in this AMR were conducted to

  12. Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

    Science.gov (United States)

    Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

    2018-05-01

    Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

  13. N-type doping of InGaN by high energy particle irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yu, K.M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA, 94720 (United States)

    2009-06-15

    This article reviews our extensive studies of the effects of native defects introduced by high energy particles on the electrical and optical properties of InGaN alloys. We show that the electronic properties of irradiated InGaN can be well described by the amphoteric defect model. Because of the extremely low position of the conduction band edge of InN the formation energy of native donor defects is very low in In-rich InGaN alloys. High energy particle irradiation of InN and In-rich InGaN, will therefore produce donor defects and result in more n-type materials. As the irradiation dose increases, the electron concentration increases until the Fermi energy E{sub F} approaches the Fermi stabilization energy E{sub FS}. At this point both donor and acceptor-type defects are formed at similar rates, and compensate each other, leading to stabilization of E{sub F} and a saturation of the electron concentration. Hence a large increase and then saturation in the Burstein-Moss shift of the optical absorption edge is also observed. Furthermore we also found that mobilities in the irradiated films can be well described by scattering from triply charged defects, providing strong evidence that native defects in InN are triple donors. The excellent agreement between the experimental results and predictions based on the ADM suggests that particle irradiation can be an effective and simple method to control the doping (electron concentration) in In-rich In{sub x}Ga{sub 1-x}N via native point defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. N-type doping of InGaN by high energy particle irradiation

    International Nuclear Information System (INIS)

    Yu, K.M.

    2009-01-01

    This article reviews our extensive studies of the effects of native defects introduced by high energy particles on the electrical and optical properties of InGaN alloys. We show that the electronic properties of irradiated InGaN can be well described by the amphoteric defect model. Because of the extremely low position of the conduction band edge of InN the formation energy of native donor defects is very low in In-rich InGaN alloys. High energy particle irradiation of InN and In-rich InGaN, will therefore produce donor defects and result in more n-type materials. As the irradiation dose increases, the electron concentration increases until the Fermi energy E F approaches the Fermi stabilization energy E FS . At this point both donor and acceptor-type defects are formed at similar rates, and compensate each other, leading to stabilization of E F and a saturation of the electron concentration. Hence a large increase and then saturation in the Burstein-Moss shift of the optical absorption edge is also observed. Furthermore we also found that mobilities in the irradiated films can be well described by scattering from triply charged defects, providing strong evidence that native defects in InN are triple donors. The excellent agreement between the experimental results and predictions based on the ADM suggests that particle irradiation can be an effective and simple method to control the doping (electron concentration) in In-rich In x Ga 1-x N via native point defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Feasibility study on silicon doping using high temperature test engineering reactor

    International Nuclear Information System (INIS)

    Seki, Masaya; Takaki, Naoyuki; Goto, Minoru; Shimakawa, Satoshi

    2011-01-01

    The feasibility study on silicon doping using the High Temperature engineering Test Reactor (HTTR) is performed by numerical simulations. The HTTR is a High Temperature Gas-cooled Reactor (HTGR) situated at JAEA Oarai research and development center. It has a 30MW thermal power and the outlet coolant temperature is 950degC. The objective of this study is to evaluate the following issues, 1. The impact of loading Si-ingots into the core on the criticality, 2. The uniformity of the neutron capture reaction rate in Si-ingots, and 3. The production rate of silicon semiconductor. In this study, six Si-ingots are loaded into the irradiation area which is located in the peripheral region of the core. They are irradiated with rotation movement around the axial direction to obtain uniform neutron capture reaction rate in the radial direction. Additionally, the neutron filter, which is made of graphite containing boron, is used to obtain uniform neutron capture reaction rate in the axial direction. The evaluations were conducted by performing the HTTR whole core calculations with the Monte Carlo code MVP-2.0. In the calculations, several tally regions were defined on the Si-ingots to investigate the uniformity of the neutron capture reaction rate. As a result, loading the Si-ingots into the core causes negative reactivity by about 0.7%dk/k. Uniform neutron capture reaction rate of Si-ingot is obtained 98% in the radial and the axial direction. In case of the target of semiconductor resistivity is set to 50 Ωcm, the required irradiation time becomes 10 hours. The HTTR is able to produce silicon semiconductor of 540kg in one-time irradiation. This study was conducted as a joint research with JAEA, Nuclear Fuel Industries, LTD, Toyota Tsusho Corporation and Tokai University. (author)

  16. Iron-doped nickel oxide nanocrystals as highly efficient electrocatalysts for alkaline water splitting.

    Science.gov (United States)

    Fominykh, Ksenia; Chernev, Petko; Zaharieva, Ivelina; Sicklinger, Johannes; Stefanic, Goran; Döblinger, Markus; Müller, Alexander; Pokharel, Aneil; Böcklein, Sebastian; Scheu, Christina; Bein, Thomas; Fattakhova-Rohlfing, Dina

    2015-05-26

    Efficient electrochemical water splitting to hydrogen and oxygen is considered a promising technology to overcome our dependency on fossil fuels. Searching for novel catalytic materials for electrochemical oxygen generation is essential for improving the total efficiency of water splitting processes. We report the synthesis, structural characterization, and electrochemical performance in the oxygen evolution reaction of Fe-doped NiO nanocrystals. The facile solvothermal synthesis in tert-butanol leads to the formation of ultrasmall crystalline and highly dispersible FexNi1-xO nanoparticles with dopant concentrations of up to 20%. The increase in Fe content is accompanied by a decrease in particle size, resulting in nonagglomerated nanocrystals of 1.5-3.8 nm in size. The Fe content and composition of the nanoparticles are determined by X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements, while Mössbauer and extended X-ray absorption fine structure analyses reveal a substitutional incorporation of Fe(III) into the NiO rock salt structure. The excellent dispersibility of the nanoparticles in ethanol allows for the preparation of homogeneous ca. 8 nm thin films with a smooth surface on various substrates. The turnover frequencies (TOF) of these films could be precisely calculated using a quartz crystal microbalance. Fe0.1Ni0.9O was found to have the highest electrocatalytic water oxidation activity in basic media with a TOF of 1.9 s(-1) at the overpotential of 300 mV. The current density of 10 mA cm(-2) is reached at an overpotential of 297 mV with a Tafel slope of 37 mV dec(-1). The extremely high catalytic activity, facile preparation, and low cost of the single crystalline FexNi1-xO nanoparticles make them very promising catalysts for the oxygen evolution reaction.

  17. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  18. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

    2016-03-15

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  19. Doping phosphoric acid in polybenzimidazole membranes for high temperature proton exchange membrane fuel cells

    DEFF Research Database (Denmark)

    He, Ronghuan; Li, Qingfeng; Jensen, Jens Oluf

    2007-01-01

    Polybenzimidazole (PBI) membranes were doped in phosphoric acid solutions of different concentrations at room temperature. The doping chemistry was studied using the Scatchard method. The energy distribution of the acid complexation in polymer membranes is heterogeneous, that is, there are two...... different types of sites in PBI for the acid doping. The protonation constants of PBI by phosphoric acid are found to be 12.7 L mol(-1) (K-1) for acid complexing sites with higher affinity, and 0.19 L mol(-1) (K-2) for the sites with lower affinity. The dissociation constants for the complexing acid onto...... these two types of PBI sites are found to be 5.4 X 10(-4) and 3.6 X 10(-2), respectively, that is, about 10 times smaller than that of aqueous phosphoric acid in the first case but 5 times higher in the second. The proton conducting mechanism is also discussed....

  20. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-01

    A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.