Lanthanoid titanate film structure deposited at different temperatures in vacuum

International Nuclear Information System (INIS)

Kushkov, V.D.; Zaslavskij, A.M.; Mel'nikov, A.V.; Zverlin, A.V.; Slivinskaya, A.Eh.

1991-01-01

Influence of deposition temperature on the structure of lanthanoid titanate films, prepared by the method of high-rate vacuum condensation. It is shown that formation of crystal structure, close to equilibrium samples, proceeds at 1100-1300 deg C deposition temperatures. Increase of temperature in this range promotes formation of films with higher degree of structural perfection. Amorphous films of lanthanoid titanates form at 200-1000 deg C. Deposition temperature shouldn't exceed 1400 deg C to prevent the formation of perovskite like phases in films

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Electrochemical behavior of TIO{sub 2} deposited stainless steel in high temperature water

Energy Technology Data Exchange (ETDEWEB)

Okamura, M.; Yamamoto, S. [Toshiba Corp., Kawasaki-city, Kanagawa (Japan); Urata, H.; Takagi, J. [Toshiba Corp., Yokohama-city, Kanagawa (Japan)

2010-07-01

It has previously been confirmed that the electrochemical corrosion potential (ECP) of stainless steel (SS) shifts in the negative direction by deposition of TiO{sub 2}. Recently we showed that TiO{sub 2} could decrease the ECP of SS in the absence of UV irradiation. In this study we measured the anodic polarization curve in high temperature water under UV irradiation and none irradiation condition and considered the mechanism of the ECP shift by TiO{sub 2} deposition. The anodic current density of the specimen increased with increasing the UV irradiation intensity and with increasing the amount of TiO{sub 2} deposition under none UV irradiation. Furthermore the oxide film of the specimen affects on the anodic current density was clarified. It was verified the ECP shift is caused by the anodic current density increasing with TiO{sub 2} deposition under both conditions of UV and none UV irradiation. (author)

High temperature tribological performance of CrAlYN/CrN nanoscale multilayer coatings deposited on ?-TiAl

OpenAIRE

Walker, J.C.; Ross, I.M.; Reinhard, C.; Rainforth, W.M.; Hovsepian, P.Eh.

2009-01-01

This paper details the effect of temperature on the frictional behaviour of highly novel CrAlYN/CrN multilayer coatings, deposited by High Power Impulse Magnetron Sputtering (HIPIMS) on a Titanium Aluminide alloy used as fan blade material in the aerospace and a turbo-charger wheel in the automotive industries. The work was the first to discover the high temperature oxide 'glaze' layer formation which occurred on CrN multilayer-type coatings at higher temperatures and has received significant...

High-temperature ductility of electro-deposited nickel

Science.gov (United States)

Dini, J. W.; Johnson, H. R.

1977-01-01

Work done during the past several months on high temperature ductility of electrodeposited nickel is summarized. Data are presented which show that earlier measurements made at NASA-Langley erred on the low side, that strain rate has a marked influence on high temperature ductility, and that codeposition of a small amount of manganese helps to improve high temperature ductility. Influences of a number of other factors on nickel properties were also investigated. They included plating solution temperature, current density, agitation, and elimination of the wetting agent from the plating solution. Repair of a large nozzle section by nickel plating is described.

High-deposition-rate ceramics synthesis

Energy Technology Data Exchange (ETDEWEB)

Allendorf, M.D.; Osterheld, T.H.; Outka, D.A. [Sandia National Laboratories, Livermore, CA (United States)] [and others

1995-05-01

Parallel experimental and computational investigations are conducted in this project to develop validated numerical models of ceramic synthesis processes. Experiments are conducted in the High-Temperature Materials Synthesis Laboratory in Sandia`s Combustion Research Facility. A high-temperature flow reactor that can accommodate small preforms (1-3 cm diameter) generates conditions under which deposition can be observed, with flexibility to vary both deposition temperature (up to 1500 K) and pressure (as low as 10 torr). Both mass spectrometric and laser diagnostic probes are available to provide measurements of gas-phase compositions. Experiments using surface analytical techniques are also applied to characterize important processes occuring on the deposit surface. Computational tools developed through extensive research in the combustion field are employed to simulate the chemically reacting flows present in typical industrial reactors. These include the CHEMKIN and Surface-CHEMKIN suites of codes, which permit facile development of complex reaction mechanisms and vastly simplify the implementation of multi-component transport and thermodynamics. Quantum chemistry codes are also used to estimate thermodynamic and kinetic data for species and reactions for which this information is unavailable.

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Low-Temperature Soft-Cover Deposition of Uniform Large-Scale Perovskite Films for High-Performance Solar Cells.

Science.gov (United States)

Ye, Fei; Tang, Wentao; Xie, Fengxian; Yin, Maoshu; He, Jinjin; Wang, Yanbo; Chen, Han; Qiang, Yinghuai; Yang, Xudong; Han, Liyuan

2017-09-01

Large-scale high-quality perovskite thin films are crucial to produce high-performance perovskite solar cells. However, for perovskite films fabricated by solvent-rich processes, film uniformity can be prevented by convection during thermal evaporation of the solvent. Here, a scalable low-temperature soft-cover deposition (LT-SCD) method is presented, where the thermal convection-induced defects in perovskite films are eliminated through a strategy of surface tension relaxation. Compact, homogeneous, and convection-induced-defects-free perovskite films are obtained on an area of 12 cm 2 , which enables a power conversion efficiency (PCE) of 15.5% on a solar cell with an area of 5 cm 2 . This is the highest efficiency at this large cell area. A PCE of 15.3% is also obtained on a flexible perovskite solar cell deposited on the polyethylene terephthalate substrate owing to the advantage of presented low-temperature processing. Hence, the present LT-SCD technology provides a new non-spin-coating route to the deposition of large-area uniform perovskite films for both rigid and flexible perovskite devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High temperature refrigerator

International Nuclear Information System (INIS)

Steyert, W.A. Jr.

1978-01-01

A high temperature magnetic refrigerator is described which uses a Stirling-like cycle in which rotating magnetic working material is heated in zero field and adiabatically magnetized, cooled in high field, then adiabatically demagnetized. During this cycle the working material is in heat exchange with a pumped fluid which absorbs heat from a low temperature heat source and deposits heat in a high temperature reservoir. The magnetic refrigeration cycle operates at an efficiency 70% of Carnot

Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Energy Technology Data Exchange (ETDEWEB)

Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

2006-10-25

Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

High temperature oxidation and corrosion in marine environments of thermal spray deposited coatings

International Nuclear Information System (INIS)

Chaliampalias, D.; Vourlias, G.; Pavlidou, E.; Stergioudis, G.; Skolianos, S.; Chrissafis, K.

2008-01-01

Flame spraying is a widely used technique for depositing a great variety of materials in order to enforce the mechanical or the anticorrosion characteristics of the substrate. Its high rate application is due to the rapidity of the process, its effectiveness and its low cost. In this work, flame-sprayed Al coatings are deposited on low carbon steels in order to enhance their anticorrosion performance. The main adhesion mechanism of the coating is mechanical anchorage, which can provide the necessary protection to steel used in several industrial and constructive applications. To evaluate the corrosion resistance of the coating, the as-coated samples are subjected in a salt spray chamber and in elevated temperature environments. The examination and characterization of the corroded samples is done by scanning electron microscopy and X-ray diffraction analysis. The as-formed coatings are extremely rough and have a lamellic homogeneous morphology. It is also found that Al coatings provide better protection in marine atmospheres, while at elevated temperatures a thick oxide layer is formed, which can delaminate after long oxidation periods due to its low adherence to the underlying coating, thus eliminating the substrate protection

Low-temperature growth of highly crystallized transparent conductive fluorine-doped tin oxide films by intermittent spray pyrolysis deposition

Energy Technology Data Exchange (ETDEWEB)

Fukano, Tatsuo; Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192 (Japan)

2004-05-30

Following the procedure by Sawada et al. (Thin Solid Films 409 (2002) 46), high-quality SnO{sub 2}:F films were grown on glass substrates at relatively low temperatures of 325-340C by intermittent spray pyrolysis deposition using a perfume atomizer for cosmetics use. Even though the substrate temperature is low, as-deposited films show a high optical transmittance of 92% in the visible range, a low electric resistivity of 5.8x10{sup -4}{omega}cm and a high Hall mobility of 28cm{sup 2}/Vs. The F/Sn atomic ratio (0.0074) in the films is low in comparison with the value (0.5) in the sprayed solution. The carrier density in the film is approximately equal to the F-ion density, suggesting that most of the F-ions effectively function as active dopants. Films' transmittance and resistivity show little change after a 450C 60min heat treatment in the atmosphere, evidencing a high heat resistance. The SnO{sub 2}:F films obtained in this work remove the difficulty to improve the figure of merit at low synthesis temperatures.

Decay Time Measurement for Different Energy Depositions of Plastic Scintillator Fabricated by High Temperature Polymerization Reaction

Energy Technology Data Exchange (ETDEWEB)

Lee, Cheol Ho; Son, Jaebum; Lee, Sangmin; Kim, Tae Hoon; Kim, Yong-Kyun [Hanyang University, Seoul (Korea, Republic of)

2016-10-15

Plastic scintillators are based on organic fluorite. They have many advantages such as fast rise and decay time, high optical transmission, ease of manufacturing, low cost, and large available size. For these reasons they are widely used for particle identification. Also, protection of people against a variety of threats (such as nuclear, radiological, and explosive) represents a true challenge along with the continuing development of science and technology. The plastic scintillator is widely used in various devise, which serves for nuclear, photonics, quantum, and high-energy physics. The plastic scintillator is probably the most widely used organic detector, and polystyrene is one of the most widely used materials in the making of the plastic scintillator detector. Thus, a styrene monomer as a solvent was used to fabricate the plastic scintillator by using high temperature polymerization reaction, and then the emission wavelength and the decay times for different energy depositions were measured by using the fabricated plastic scintillator. A plastic scintillator was fabricated to measure decay time for different energy depositions using the high temperature polymerization. Emission wavelength was measured of 426.05 nm to confirm a scintillator property using the spectrophotometer. Four gamma-ray sources (Cs-137, Co-60, Na-22, and Ba-133) were used to evaluate effect for decay time of different energy depositions. The average decay time of the fabricated plastic scintillator was measured to approximately 4.72 ns slightly higher more than commercial plastic scintillator. In future, light output and linearity will be measured to evaluate other property compared with the commercial scintillator.

Decay Time Measurement for Different Energy Depositions of Plastic Scintillator Fabricated by High Temperature Polymerization Reaction

International Nuclear Information System (INIS)

Lee, Cheol Ho; Son, Jaebum; Lee, Sangmin; Kim, Tae Hoon; Kim, Yong-Kyun

2016-01-01

Plastic scintillators are based on organic fluorite. They have many advantages such as fast rise and decay time, high optical transmission, ease of manufacturing, low cost, and large available size. For these reasons they are widely used for particle identification. Also, protection of people against a variety of threats (such as nuclear, radiological, and explosive) represents a true challenge along with the continuing development of science and technology. The plastic scintillator is widely used in various devise, which serves for nuclear, photonics, quantum, and high-energy physics. The plastic scintillator is probably the most widely used organic detector, and polystyrene is one of the most widely used materials in the making of the plastic scintillator detector. Thus, a styrene monomer as a solvent was used to fabricate the plastic scintillator by using high temperature polymerization reaction, and then the emission wavelength and the decay times for different energy depositions were measured by using the fabricated plastic scintillator. A plastic scintillator was fabricated to measure decay time for different energy depositions using the high temperature polymerization. Emission wavelength was measured of 426.05 nm to confirm a scintillator property using the spectrophotometer. Four gamma-ray sources (Cs-137, Co-60, Na-22, and Ba-133) were used to evaluate effect for decay time of different energy depositions. The average decay time of the fabricated plastic scintillator was measured to approximately 4.72 ns slightly higher more than commercial plastic scintillator. In future, light output and linearity will be measured to evaluate other property compared with the commercial scintillator

Effect of water chemistry on corrosion of stainless steel and deposition of corrosion products in high temperature pressurised water

International Nuclear Information System (INIS)

Morrison, Jonathan; Cooper, Christopher; Ponton, Clive; Connolly, Brian; Banks, Andrew

2012-09-01

In any water-cooled nuclear reactor, the corrosion of the structural materials in contact with the coolant and the deposition of the resulting oxidised species has long been an operational concern within the power generation industry. Corrosion of the structural materials at all points in the reactor leads to low concentrations of oxidised metal species in the coolant water. The oxidised metal species can subsequently be deposited out as CRUD deposits at various points around the reactor's primary and secondary loops. The deposition of soluble oxidised material at any location in the reactor cooling system is undesirable due to several effects; deposits have a porous structure, capable of incorporating radiologically active material (forming out of core radiation fields) and concentrating aggressively corrosive chemicals, which exacerbate environmental degradation of structural and fuel-cladding materials. Deposits on heat transfer surfaces also limit efficiency of the system as a whole. The work in this programme is an attempt to determine and understand the fundamental corrosion and deposition behaviour under controlled, simulated reactor conditions. The rates of corrosion of structural materials within pressurised water reactors are heavily dependent on the condition of the exposed surface. The effect of mechanical grinding and of electropolishing on the corrosion rate and structure of the resultant oxide film formed on grade 316L stainless steel exposed to high purity water, modified to pH 9.5 and 10.5 at temperatures between 200 and 300 deg. C and pressures of up to 100 bar will be investigated. The corrosion of stainless steel in water via electrochemical oxidation leads to the formation of surface iron, nickel and chromium based spinels. Low concentrations of these spinels can be found dissolved in the coolant water. The solubility of magnetite, stainless steels' major corrosion product, in high purity water will be studied at pH 9.5 to 10.5 at

ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

International Nuclear Information System (INIS)

Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

2004-01-01

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

EFFECT OF OIL TEMPERATURE ON THE WAX DEPOSITION OF CRUDE OIL WITH COMPOSITION ANALYSIS

Directory of Open Access Journals (Sweden)

Qing Quan

Full Text Available Abstract Wax deposition behavior was investigated in a set of one-inch experiment flow loops, using a local crude oil with high wax content. The temperature of the oil phase is chosen as a variable parameter while the temperature of the coolant media is maintained constant. Detailed composition of the deposit is characterized using High Temperature Gas Chromatography. It was found that the magnitude of the diffusion of the heavier waxy components (C35-C50 decreases when the oil temperature decreases, but the magnitude of the diffusion of the lighter waxy components increases. This result means that the diffusion of wax molecules shifts towards lower carbon number, which further proves the concept of molecular diffusion. Meanwhile, a meaningful phenomenon is that the mass of the deposit increases with the oil temperature decrease, which definitely proves the influence of wax solubility on deposition, while the formation of an incipient gel layer reflects the fact that an increase in the mass of the deposit does not mean a larger wax percentage fraction at lower oil temperature.

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

Enhancement of deposition rate at cryogenic temperature in synchrotron radiation excited deposition of silicon film

International Nuclear Information System (INIS)

Nara, Yasuo; Sugita, Yoshihiro; Ito, Takashi; Kato, Hiroo; Tanaka, Ken-ichiro

1989-01-01

The authors have investigated the synchrotron radiation excited deposition of silicon films on the SiO 2 substrate by using SiH 4 /He mixture gas at BL-12C at Photon Factory. They used VUV light from the multilayer mirror with the center photon energy from 97 to 123eV, which effectively excites L-core electrons of silicon. Substrate temperature was widely varied from -178 degree C to 500 degree C. At -178 degree C, the deposition rate was as high as 400nm/200mAHr (normalized at the storage ring current at 200mA). As increasing the substrate temperature, the deposition rate was drastically decreased. The number of deposited silicon atoms is estimated to be 4 to 50% of incident photons, while the number of photo generated species in the gas phase within the mean free path from the surface is calculated as few as about 10 -3 of incident photons. These experimental results show that the deposition reaction is governed by the dissociation of surface adsorbates by the synchrotron radiation

Experimental studies on particle deposition by thermophoresis and inertial impaction from particulate high temperature gas flow

International Nuclear Information System (INIS)

Kim, S.S.; Kim, Y.J.

1987-01-01

In view of fouling and erosion of gas turbine blade, heat exchanger and pipelines, increasing attention has been paid to particle deposition (transport) in high temperature flow systems. This is also necessary to develop a cleaning or filtration devices. Using 'real time' laser-light reflectivity and scanning electron microscope technique, we quantitatively treat particle size effect and the interaction between Brownian diffusion, thermoporesis (particle drift down a temperature gradient), and inertial impaction of particles (0.2 to 30 μm in diameter) in laminar hot combustion gas-particles flow (ca. 1565 K)

Deposition temperature influence on sputtered nanogranular magnetoresistive composites

International Nuclear Information System (INIS)

Mujika, M.; Arana, S.; Castano, E.

2007-01-01

Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

Electron microscopy observation of TiO2 nanocrystal evolution in high-temperature atomic layer deposition.

Science.gov (United States)

Shi, Jian; Li, Zhaodong; Kvit, Alexander; Krylyuk, Sergiy; Davydov, Albert V; Wang, Xudong

2013-01-01

Understanding the evolution of amorphous and crystalline phases during atomic layer deposition (ALD) is essential for creating high quality dielectrics, multifunctional films/coatings, and predictable surface functionalization. Through comprehensive atomistic electron microscopy study of ALD TiO2 nanostructures at designed growth cycles, we revealed the transformation process and sequence of atom arrangement during TiO2 ALD growth. Evolution of TiO2 nanostructures in ALD was found following a path from amorphous layers to amorphous particles to metastable crystallites and ultimately to stable crystalline forms. Such a phase evolution is a manifestation of the Ostwald-Lussac Law, which governs the advent sequence and amount ratio of different phases in high-temperature TiO2 ALD nanostructures. The amorphous-crystalline mixture also enables a unique anisotropic crystal growth behavior at high temperature forming TiO2 nanorods via the principle of vapor-phase oriented attachment.

The Setup Design for Selective Laser Sintering of High-Temperature Polymer Materials with the Alignment Control System of Layer Deposition

Directory of Open Access Journals (Sweden)

Alexey Nazarov

2018-03-01

Full Text Available This paper presents the design of an additive setup for the selective laser sintering (SLS of high-temperature polymeric materials, which is distinguished by an original control system for aligning the device for depositing layers of polyether ether ketone (PEEK powder. The kinematic and laser-optical schemes are given. The main cooling circuits are described. The proposed technical and design solutions enable conducting the SLS process in different types of high-temperature polymer powders. The principles of the device adjustment for depositing powder layers based on an integral thermal analysis are disclosed. The PEEK sinterability was shown on the designed installation. The physic-mechanical properties of the tested 3D parts were evaluated in comparison with the known data and showed an acceptable quality.

High-Temperature Oxidation and Smelt Deposit Corrosion of Ni-Cr-Ti Arc-Sprayed Coatings

Science.gov (United States)

Matthews, S.; Schweizer, M.

2013-08-01

High Cr content Ni-Cr-Ti arc-sprayed coatings have been extensively applied to mitigate corrosion in black liquor recovery boilers in the pulp and paper industry. In a previous article, the effects of key spray parameters on the coating's microstructure and its composition were investigated. Three coating microstructures were selected from that previous study to produce a dense, oxidized coating (coating A), a porous, low oxide content coating (coating B), and an optimized coating (coating C) for corrosion testing. Isothermal oxidation trials were performed in air at 550 and 900 °C for 30 days. Additional trials were performed under industrial smelt deposits at 400 and 800 °C for 30 days. The effect of the variation in coating microstructure on the oxidation and smelt's corrosion response was investigated through the characterization of the surface corrosion products, and the internal coating microstructural developments with time at high temperature. The effect of long-term, high-temperature exposure on the interaction between the coating and substrate was characterized, and the mechanism of interdiffusion was discussed.

High temperature vapors science and technology

CERN Document Server

Hastie, John

2012-01-01

High Temperature Vapors: Science and Technology focuses on the relationship of the basic science of high-temperature vapors to some areas of discernible practical importance in modern science and technology. The major high-temperature problem areas selected for discussion include chemical vapor transport and deposition; the vapor phase aspects of corrosion, combustion, and energy systems; and extraterrestrial high-temperature species. This book is comprised of seven chapters and begins with an introduction to the nature of the high-temperature vapor state, the scope and literature of high-temp

Effect of deposition temperature on the properties of ZnO-doped indium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung Jin; Cho, Shin Ho [Silla University, Busan (Korea, Republic of)

2014-05-15

ZnO-doped In{sub 2}O{sub 3} (ZIO) thin films were deposited on quartz substrates at various deposition temperatures by radio-frequency magnetron sputtering. All the ZIO thin films showed a significant dependence on the deposition temperature. A strong preferential growth orientation was observed for all samples except the one deposited at 25 .deg. C. As the deposition temperature was increased, the crystalline orientation of the main (222) plane did not change, but the full width at half maximum got smaller and the intensity increased rapidly. The ZIO thin film deposited at 100 .deg. C showed the highest figure of merit with an average particle size of 60 nm, a bandgap energy of 3.51 eV, an electrical resistivity of 2.63 x 10{sup -3} Ωcm, and an electron concentration of 4.99 x 10{sup 20} cm{sup -3}. A blue-shift of optical bandgap energy was observed with increasing deposition temperature. These results suggest that the optimum deposition temperature for growing high-quality ZIO films is 100 .deg. C and that the structural, optical, and electrical properties of ZIO thin films can be modulated by controlling the deposition temperature.

Application and analysis of palladium vapor deposited on stainless steel for high temperature electrical contacts

International Nuclear Information System (INIS)

Jodeh, S.

2008-01-01

Using electron beam evaporation. Pd thin films of 300 nm thickness have been deposited on 301 stainless steel for high temperature electrical contact studies. The structure and compost ion of the helms were studied in detail x-ray diffraction (XRD), scanning electron microscopy (Sem), electron probe microanalysis (EPMA), and x-ray photoelectron spectroscopy (XP S) with sputter depth profiling. The contact properties such as contact resistance, fretting wear resistance, and thermal stability have been measured.The contact resistance rem ins low after heat-aging in air for 168 h at 150 and 200 deg., but increases significantly after heat-aging at 340 deg.. This increase in contact resistance is caused by the formation of about a 27 nm (1 μin.) thick Pdo. In contrast, the thickness of the Pdo is too thin to cause measurable contact resistance increases after heat-aging at 150 and 200 deg.. The fretting wear resistance of Pd coated 301 stainless steel is better than that of electroplated Sn of ser veal thousand nm thickness. Thus, vapor deposited Pd coating on 301 stainless steel may replace electroplated Sn for electrical contact application at elevated temperatures.

Fouling deposition characteristic by variation of coal particle size and deposition temperature in DTF (Drop Tube Furnace)

Energy Technology Data Exchange (ETDEWEB)

Namkung, Hueon; Jeon, Youngshin; Kim, Hyungtaek [Ajou Univ., Suwon (Korea, Republic of). Div. of Energy Systems Research; Xu, Li-hua [IAE, Suwon (Korea, Republic of). Plant Engineering Center

2013-07-01

One of the major operation obstacles in gasification process is ash deposition phenomenon. In this investigation, experiment was carried out to examine coal fouling characteristics using a laminar DTF (Drop Tube Furnace) with variation of operating condition such as different coal size, and probe surface temperature. Four different samples of pulverized coal were injected into DTF under various conditions. The ash particles are deposited on probe by impacting and agglomerating action. Fouling grains are made of eutectic compound, which is made by reacting with acid minerals and alkali minerals, in EPMA (Electron Probe Micro-Analysis). And agglomeration area of fouling at top layer is wide more than it of middle and bottom layer. The major mineral factors of fouling phenomenon are Fe, Ca, and Mg. The deposition quantity of fouling increases with increasing particle size, high alkali mineral (Fe, Ca, and Mg) contents, and ash deposition temperature.

Effects of deposition temperature on electrodeposition of zinc–nickel alloy coatings

International Nuclear Information System (INIS)

Qiao, Xiaoping; Li, Helin; Zhao, Wenzhen; Li, Dejun

2013-01-01

Highlights: ► Both normal and anomalous deposition can be realized by changing bath temperature. ► The Ni content in Zn–Ni alloy deposit increases sharply as temperature reach 60 °C. ► The abrupt change in coating composition is caused by the shift of cathodic potential. ► The deposition temperature has great effect on microstructure of Zn–Ni alloy deposit. -- Abstract: Zinc–nickel alloy coatings were electrodeposited on carbon steel substrates from the ammonium chloride bath at different temperatures. The composition, phase structure and morphology of these coatings were analyzed by energy dispersive spectrometer, X-ray diffractometer and scanning electron microscopy respectively. Chronopotentiometry and potentiostatic methods were also employed to analyze the possible causes of the composition and structure changes induced by deposition temperature. It has been shown that both normal and anomalous co-deposition of zinc and nickel could be realized by changing deposition temperature under galvanostatic conditions. The abrupt changes in the composition and phase structure of the zinc–nickel alloy coatings were observed when deposition temperature reached 60 °C. The sharply decrease of current efficiency for zinc–nickel co-deposition was also observed when deposition temperature is higher than 40 °C. Analysis of the partial current densities showed that the decrease of current efficiency with the rise of deposition temperature was due to the enhancement of the hydrogen evolution. It was also confirmed that the ennoblement of cathodic potential was the cause for the increase of nickel content in zinc–nickel alloy coatings as a result of deposition temperature rise. The good zinc–nickel alloy coatings with compact morphology and single γ phase could be obtained when the deposition temperature was fixed at 30–40 °C

Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W

International Nuclear Information System (INIS)

Joshi, R.V.; Prasad, V.; Krusin-Elbaum, L.; Yu, M.; Norcott, M.

1990-01-01

The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH 4 reduction of WF 6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 degree C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Aspects of alkali chloride chemistry on deposit formation and high temperature corrosion in biomass and waste fired boilers

OpenAIRE

Broström, Markus

2010-01-01

Combustion of biomass and waste has several environmental, economical and political advantages over the use of fossil fuels for the generation of heat and electricity. However, these fuels often have a significantly different composition and the combustion is therefore associated with additional operational problems. A high content of chlorine and alkali metals (potassium and sodium) often causes problems with deposit formation and high temperature corrosion. Some different aspects of these i...

Catalytic Palladium Film Deposited by Scalable Low-Temperature Aqueous Combustion.

Science.gov (United States)

Voskanyan, Albert A; Li, Chi-Ying Vanessa; Chan, Kwong-Yu

2017-09-27

This article describes a novel method for depositing a dense, high quality palladium thin film via a one-step aqueous combustion process which can be easily scaled up. Film deposition of Pd from aqueous solutions by conventional chemical or electrochemical methods is inhibited by hydrogen embrittlement, thus resulting in a brittle palladium film. The method outlined in this work allows a direct aqueous solution deposition of a mirror-bright, durable Pd film on substrates including glass and glassy carbon. This simple procedure has many advantages including a very high deposition rate (>10 cm 2 min -1 ) and a relatively low deposition temperature (250 °C), which makes it suitable for large-scale industrial applications. Although preparation of various high-quality oxide films has been successfully accomplished via solution combustion synthesis (SCS) before, this article presents the first report on direct SCS production of a metallic film. The mechanism of Pd film formation is discussed with the identification of a complex formed between palladium nitrate and glycine at low temperature. The catalytic properties and stability of films are successfully tested in alcohol electrooxidation and electrochemical oxygen reduction reaction. It was observed that combustion deposited Pd film on a glassy carbon electrode showed excellent catalytic activity in ethanol oxidation without using any binder or additive. We also report for the first time the concept of a reusable "catalytic flask" as illustrated by the Suzuki-Miyaura cross-coupling reaction. The Pd film uniformly covers the inner walls of the flask and eliminates the catalyst separation step. We believe the innovative concept of a reusable catalytic flask is very promising and has the required features to become a commercial product in the future.

Deposition temperature effect on electrical properties and interface of high-k ZrO{sub 2} capacitor

Energy Technology Data Exchange (ETDEWEB)

Kim, Joo-Hyung; Ignatova, Velislava A [Fraunhofer Institute, Center of Nanoelectronic Technologies (CNT), Koenigsbruecker Str., 01099 Dresden (Germany); Heitmann, Johannes; Oberbeck, Lars [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Str. 180, 01099 Dresden (Germany)], E-mail: joo-hyung.kim@inha.ac.kr

2008-09-07

The electrical characteristics, i.e. leakage current and capacitance, of ZrO{sub 2} based metal-insulator-metal structures, grown at 225, 250 and 275 deg, C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 deg. C deposition temperature, while the highest dielectric constant (k {approx} 43) was measured for the samples grown at 275 {sup 0}C, most probably due to the formation of tetragonal/cubic phases in the ZrO{sub 2} layer. We have shown that the main leakage current of these ZrO{sub 2} capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 {sup 0}C deposition temperature the oxygen content at and beyond the ZrO{sub 2}/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiO{sub x}N{sub y} interface layer. At and above 275 deg. C the ZrO{sub 2} layer changes its structure and becomes crystalline as proven by XRD analysis. (fast track communication)

An investigation on high temperature fatigue properties of tempered nuclear-grade deposited weld metals

Science.gov (United States)

Cao, X. Y.; Zhu, P.; Yong, Q.; Liu, T. G.; Lu, Y. H.; Zhao, J. C.; Jiang, Y.; Shoji, T.

2018-02-01

Effect of tempering on low cycle fatigue (LCF) behaviors of nuclear-grade deposited weld metal was investigated, and The LCF tests were performed at 350 °C with strain amplitudes ranging from 0.2% to 0.6%. The results showed that at a low strain amplitude, deposited weld metal tempered for 1 h had a high fatigue resistance due to high yield strength, while at a high strain amplitude, the one tempered for 24 h had a superior fatigue resistance due to high ductility. Deposited weld metal tempered for 1 h exhibited cyclic hardening at the tested strain amplitudes. Deposited weld metal tempered for 24 h exhibited cyclic hardening at a low strain amplitude but cyclic softening at a high strain amplitude. Existence and decomposition of martensite-austenite (M-A) islands as well as dislocations activities contributed to fatigue property discrepancy among the two tempered deposited weld metal.

Deposition of superconducting (Cu, C)-Ba-O films by pulsed laser deposition at moderate temperature

International Nuclear Information System (INIS)

Yamamoto, Tetsuro; Kikunaga, Kazuya; Obara, Kozo; Terada, Norio; Kikuchi, Naoto; Tanaka, Yasumoto; Tokiwa, Kazuyasu; Watanabe, Tsuneo; Sundaresan, Athinarayanan; Shipra

2007-01-01

Superconducting (Cu, C)-Ba-O thin films have been epitaxially grown on (100) SrTiO 3 at a low growth temperature of 500-600 deg. C by pulsed laser deposition. The dependences of their crystallinity and transport properties on preparation conditions have been investigated in order to clarify the dominant parameters for carbon incorporation and the emergence of superconductivity. It has been revealed that the CO 3 content in the films increases with increasing both the parameters of partial pressure of CO 2 during film growth and those of growth rate and enhancement of superconducting properties. The present study has also revealed that the structural and superconducting properties of the (Cu, C)-Ba-O films are seriously deteriorated by the irradiation of energetic particles during deposition. Suppression of the radiation damage is another key for a high and uniform superconducting transition. By these optimizations, a superconducting onset temperature above 50 K and a zero-resistance temperature above 40 K have been realized

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Science.gov (United States)

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

A high-efficiency solution-deposited thin-film photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

2008-10-02

High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

International Nuclear Information System (INIS)

Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

2015-01-01

The Al 2 O 3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H 2 O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D 2 O instead of H 2 O in the ALD and found that the Al 2 O 3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH 3 groups than the high-temperature film. This CH 3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H 2 O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H 2 O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D 2 O-oxidant ALD but found that the mass density and dielectric constant of D 2 O-grown Al 2 O 3 films are smaller than those of H 2 O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al 2 O 3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

KAUST Repository

Stavarache, Ionel

2017-07-21

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO₂ thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO₂ by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO₂ photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 10¹⁴ Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO₂ thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

2008-10-01

A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

Effect of deposition conditions on the properties of pyrolytic silicon carbide coatings for high-temperature gas-cooled reactor fuel particles

International Nuclear Information System (INIS)

Stinton, D.P.; Lackey, W.J.

1977-10-01

Silicon carbide coatings on HTGR microsphere fuel act as the barrier to contain metallic fission products. Silicon carbide coatings were applied by the decomposition of CH 3 SiCl 3 in a 13-cm-diam (5-in.) fluidized-bed coating furnace. The effects of temperature, CH 3 SiCl 3 supply rate and the H 2 :CH 3 SiCl 3 ratio on coating properties were studied. Deposition temperature was found to control coating density, whole particle crushing strength, coating efficiency, and microstructure. Coating density and microstructure were also partially determined by the H 2 :CH 3 SiCl 3 ratio. From this work, it appears that the rate at which high quality SiC can be deposited can be increased from 0.2 to 0.5 μm/min

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Energy Technology Data Exchange (ETDEWEB)

Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

2016-01-15

It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

Effects of temperature and particle size on deposition in land based turbines - article no. 051503

Energy Technology Data Exchange (ETDEWEB)

Crosby, J.M.; Lewis, S.; Bons, J.P.; Ai, W.G.; Fletcher, T.H. [Brigham Young University, Provo, UT (United States). Dept. for Mechanical Engineering

2008-09-15

Four series of tests were performed in an accelerated deposition test facility to study the independent effects of particle size, gas temperature, and metal temperature on ash deposits from two candidate power turbine synfuels (coal and petcoke). The facility matches the gas temperature and velocity of modern first stage high pressure turbine vanes while accelerating the deposition process. Particle size was found to have a significant effect on capture efficiency with larger particles causing significant thermal barrier coating (TBC) spallation during a 4 h accelerated test. In the second series of tests, particle deposition rate was found to decrease with decreasing gas temperature. The threshold gas temperature for deposition was approximately 960{sup o}C. In the third and fourth test series, impingement cooling was applied to the back side of the target coupon to simulate internal vane cooling. Capture efficiency was reduced with increasing mass flow of coolant air; however, at low levels of cooling, the deposits attached more tenaciously to the TBC layer. Postexposure analyses of the third test series (scanning electron microscopy and X-ray spectroscopy) show decreasing TBC damage with increased cooling levels.

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

2016-03-31

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

Influence of load and temperature on tribological behaviour of electroless Ni-P deposits

Science.gov (United States)

Kundu, S.; Das, S. K.; Sahoo, P.

2016-09-01

Electroless Ni-P coatings have shown tremendous potential as tribology material at room temperature. However, the performance of the same in high temperature field needs to be evaluated as investigation reveals the softening of most of the coating materials. In the current study, both as-deposited as well as heat treated samples are developed for the performance evaluation. Coatings are tested under different loads with a constant speed and at temperatures ranging from room temperature (R.T.) to 500°C. Tribological tests are carried out on a pin-on- disc tribotester by selecting a wear track diameter of 60 mm for 5 minutes. Wear is reported in the form of wear rate by following Archard's equation. The microstructure characterization of the coating is performed using SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-Ray Analysis) and XRD (X-Ray Diffraction Analysis). Coating is developed with phosphorous weight percentages around 9% on cylindrical mild steel samples and the deposition thickness is observed to be around 50 μm. The as-deposited coating is found to be amorphous in nature and hardness of the as-deposited coating is found to be around 585HV01. Friction coefficient increases initially with the increase in temperature from room temperature up to 100°C but thereafter gradually decrease with the increase in temperature. Initial increase in temperature (up to 100°C) provides higher rate of wear compared to room temperature but with further increase it drops in most of the cases. Wear rate increases with the increase in temperature but as it crosses or nears the phase transformation temperature (around 340°C), the scenario gets reversed. From X-ray diffraction analysis, it is found that coating is amorphous in as-deposited condition but transforms into a crystalline structure with heat treatment.

Low-temperature atomic layer deposition of MoS{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Jurca, Titel; Wang, Binghao; Tan, Jeffrey M.; Lohr, Tracy L.; Marks, Tobin J. [Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL (United States); Moody, Michael J.; Henning, Alex; Emery, Jonathan D.; Lauhon, Lincoln J. [Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, IL (United States)

2017-04-24

Wet chemical screening reveals the very high reactivity of Mo(NMe{sub 2}){sub 4} with H{sub 2}S for the low-temperature synthesis of MoS{sub 2}. This observation motivated an investigation of Mo(NMe{sub 2}){sub 4} as a volatile precursor for the atomic layer deposition (ALD) of MoS{sub 2} thin films. Herein we report that Mo(NMe{sub 2}){sub 4} enables MoS{sub 2} film growth at record low temperatures - as low as 60 C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

High temperature electronic gain device

International Nuclear Information System (INIS)

McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

1979-01-01

An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

High-Temperature Electrical Insulation Behavior of Alumina Films Prepared at Room Temperature by Aerosol Deposition and Influence of Annealing Process and Powder Impurities

Science.gov (United States)

Schubert, Michael; Leupold, Nico; Exner, Jörg; Kita, Jaroslaw; Moos, Ralf

2018-04-01

Alumina (Al2O3) is a widely used material for highly insulating films due to its very low electrical conductivity, even at high temperatures. Typically, alumina films have to be sintered far above 1200 °C, which precludes the coating of lower melting substrates. The aerosol deposition method (ADM), however, is a promising method to manufacture ceramic films at room temperature directly from the ceramic raw powder. In this work, alumina films were deposited by ADM on a three-electrode setup with guard ring and the electrical conductivity was measured between 400 and 900 °C by direct current measurements according to ASTM D257 or IEC 60093. The effects of film annealing and of zirconia impurities in the powder on the electrical conductivity were investigated. The conductivity values of the ADM films correlate well with literature data and can even be improved by annealing at 900 °C from 4.5 × 10-12 S/cm before annealing up to 5.6 × 10-13 S/cm after annealing (measured at 400 °C). The influence of zirconia impurities is very low as the conductivity is only slightly elevated. The ADM-processed films show a very good insulation behavior represented by an even lower electrical conductivity than conventional alumina substrates as they are commercially available for thick-film technology.

Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

Energy Technology Data Exchange (ETDEWEB)

Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

2016-04-30

Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Hamidinezhad, Habib; Wahab, Yussof; Othaman, Zulkafli; Ismail, Abd Khamim

2011-01-01

Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 deg. C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 deg. C. In addition, it was revealed that the grown wires were silicon-crystallized.

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

Reduced thermal budget processing of Y--Ba--Cu--O high temperature superconducting thin films by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Singh, R.; Sinha, S.; Hsu, N.J.; Ng, J.T.C.; Chou, P.; Thakur, R.P.S.; Narayan, J.

1991-01-01

Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y--Ba--Cu--O (YBCO) on MgO and SrTiO 3 substrates by RIP assisted MOCVD. By using a mixture of N 2 O and O 2 as the oxygen source films deposited initially at 600 degree C for 1 min and then at 740 degree C for 30 min are primarily c-axis oriented and with zero resistance being observed at 84 and 89 K for MgO and SrTiO 3 substrates, respectively. The zero magnetic field current densities at 77 K for MgO and SrTiO 3 substrates are 1.2x10 6 and 1.5x10 6 A/cm 2 , respectively. It is envisaged that high energy photons from the incoherent light source and the use of a mixture of N 2 O and O 2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

Energy Technology Data Exchange (ETDEWEB)

Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

2014-10-31

Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

High Temperature Corrosion in Biomass Incineration Plants

DEFF Research Database (Denmark)

Montgomery, Melanie; Maahn, Ernst emanuel; Gotthjælp, K.

1997-01-01

The aim of the project is to study the role of ash deposits in high temperature corrosion of superheater materials in biomass and refuse fire combined heat and power plants. The project has included the two main activities: a) A chemical characterisation of ash deposits collected from a major...

Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

Science.gov (United States)

Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

2018-05-01

Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

NARCIS (Netherlands)

Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

2008-01-01

Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder

Deposition and High-Temperature Corrosion in Biomass-Fired Boilers

DEFF Research Database (Denmark)

Michelsen, Hanne Philbert

with a newly developed condensation probe. SEM analyses revealed that the vapor deposits consisted of individual angular particles of primarily KCl (1-2 µm) and a sponge-like matrix of submicron particles consisting primarily of K2SO4, which may represent vapor condensate agglomerates. Potassium deposits...... deposits at Masnedø CHP. The density and morphology of these layers indicate that they have been molten. This was taken as evidence of a reaction between the deposit and the metal tube.A corrosion mechanism for chlorine corrosion is suggested. The mechanism is based on gaseous chlorine attack where iron...

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

Directory of Open Access Journals (Sweden)

Neha Batra

2015-06-01

Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

Deposition of thin films and surface modification by pulsed high energy density plasma

International Nuclear Information System (INIS)

Yan Pengxun; Yang Size

2002-01-01

The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

EFFECT OF La2O3 ON HIGH-TEMPERATURE OXIDATION RESISTANCE OF ELECTROSPARK DEPOSITED Ni-BASED COATINGS

OpenAIRE

YUXIN GAO; JIAN YI; ZHIGANG FANG; HU CHENG

2014-01-01

The oxidation tests of electrospark deposited Ni-based coatings without and with 2.5 wt.% La2O3 were conducted at 960°C in air for 100 h. The oxidation kinetic of the coatings was studied by testing the weight gain. The phase structures and morphologies of the oxidized coatings were investigated by XRD and SEM. The experimental results show that the coatings with 2.5 wt.% La2O3 exhibits excellent high-temperature oxidation resistance including low oxidation rate and improved spallation resist...

High performance emitter for thermionic diode obtained by chemical vapor deposition

International Nuclear Information System (INIS)

Faron, R.; Bargues, M.; Durand, J.P.; Gillardeau, J.

1973-01-01

Vapor deposition process conditions presently known for tungsten and molybdenum (specifically the range of high temperatures and low pressures) permit the achievement of high performance thermionic emitters when used with an appropriate technology. One example of this uses the following series of successive vapor deposits, the five last vapor deposits constituting the fabrication of the emitting layer: Mo deposit for the formation of the nuclear fuel mechanical support; Mo deposit, which constitutes the sheath of the nuclear fuel; epitaxed Mo--W alloy deposit; epitaxed tungsten deposit; fine-grained tungsten deposit; and tungsten deposit with surface orientation according to plane (110)W. In accordance with vapor deposition techniques previously developed, such a sequence of deposits can easily be achieved with the same equipment, even without having to take out the part during the course of the process. (U.S.)

Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

2017-03-01

Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

Laser surface melting of 10 wt% Mo alloyed hardfacing Stellite 12 plasma transferred arc deposits: Structural evolution and high temperature wear performance

Science.gov (United States)

Dilawary, Shaikh Asad Ali; Motallebzadeh, Amir; Afzal, Muhammad; Atar, Erdem; Cimenoglu, Huseyin

2018-05-01

Laser surface melting (LSM) process has been applied on the plasma transferred arc (PTA) deposited Stellite 12 and 10 wt% Mo alloyed Stellite 12 in this study. Following the LSM process, structural and mechanical property comparison of the LSM'ed surfaces has been made. Hardness of the LSM'ed surfaces was measured as 549 HV and 623 HV for the Stellite 12 and Stellite 12 + 10 wt% Mo deposits, respectively. Despite their different hardness and structural features, the LSM'ed surfaces exhibited similar tribological performance at room temperature (RT), where fatigue wear mechanism operates. However, the wear at 500 °C promotes tribo-oxide layer formation whose composition depended on the alloying with Mo. Thus, addition of 10 wt% Mo into Stellite 12 PTA deposit has remarkably enhanced the high temperature wear performance of the LSM'ed surface as a result of participation of complex oxide (CoMoO4) in tribo-oxide layer.

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

Science.gov (United States)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Bismuth Titanate Fabricated by Spray-on Deposition and Microwave Sintering For High-Temperature Ultrasonic Transducers.

Science.gov (United States)

Searfass, Clifford T; Pheil, C; Sinding, K; Tittmann, B R; Baba, A; Agrawal, D K

2016-01-01

Thick films of ferroelectric bismuth titanate (Bi4Ti3O12) have been fabricated by spray-on deposition in conjunction with microwave sintering for use as high-temperature ultrasonic transducers. The elastic modulus, density, permittivity, and conductivity of the films were characterized. Electro-mechanical properties of the films were estimated with a commercial d33 meter which gave 16 pC/N. This value is higher than typically reported for bulk bismuth titanate; however, these films withstand higher field strengths during poling which is correlated with higher d33 values. Films were capable of operating at 650 °C for roughly 5 min before depoling and can operate at 600 °C for at least 7 days.

Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Hone, Fekadu Gashaw, E-mail: fekeye@gmail.com [Hawassa University, Department of Physics, Hawassa (Ethiopia); Ampong, Francis Kofi [Kwame Nkrumah University of Science and Technology, Department of Physics, Kumasi (Ghana)

2016-11-01

Lead selenide (PbSe) nanocrystalline thin films have been deposited on silica glass substrates by the chemical bath deposition technique. The samples were deposited at the bath temperatures of 60, 75 and 90 °C respectively and characterized by a variety of techniques. The XRD results revealed that the PbSe thin film deposited at 60 °C was amorphous in nature. Films deposited at higher temperatures exhibited sharp and intense diffraction peaks, indicating an improvement in crystallinety. The deposition temperature also had a strong influence on the preferred orientation of the crystallites as well as other structural parameters such as microstrain and dislocation density. From the SEM study it was observed that film deposited at 90 °C had well defined crystallites, uniformly distributed over the entire surface of the substrate. The EDAX study confirmed that the samples deposited at the higher temperature had a better stoichiometric ratio. The optical band gap varied from 2.26 eV to 1.13 eV with increasing deposition temperature. - Highlights: • The crystallinety of the films improved as the deposition temperature increased. • The deposition temperature strongly influenced the preferred orientations. • Microstrain and dislocation density are decreased linearly with deposition temperature. • Band gap decreased from 2.26 eV to 1.13 eV as the deposition temperature increased.

Deposition of magnetite particles from high velocity water onto isothermal tubes

International Nuclear Information System (INIS)

Burrill, K.A.

1977-02-01

The deposition rate of magnetite particles from a high velocity water slurry onto isothermal metal tubes was measured. The effects of velocity (5 to 100 m/s), slurry concentration (200 to 1000 mg Fe/kg H 2 O), temperature (25 0 to 90 0 C), pH (4 to 10 at 25 0 C), and tube material (nickel, Zircaloy-4) on deposition rate were studied. The data are interpreted in terms of two steps in series for deposition: a mass transfer step followed by a deposition or inertial coasting step. Mass transfer of particles through the bulk water phase apparently limits the deposition of particles at high Reynolds number

The effect of substrate temperature on atomic layer deposited zinc tin oxide

Energy Technology Data Exchange (ETDEWEB)

Lindahl, Johan, E-mail: johan.lindahl@angstrom.uu.se; Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Wätjen, J. Timo, E-mail: timo.watjen@angstrom.uu.se; Edoff, Marika, E-mail: marika.edoff@angstrom.uu.se; Törndahl, Tobias, E-mail: tobias.torndahl@angstrom.uu.se

2015-07-01

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO{sub x} ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm{sup 3} in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap.

The effect of substrate temperature on atomic layer deposited zinc tin oxide

International Nuclear Information System (INIS)

Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

2015-01-01

Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

Effect of ultraviolet rays in low temperature Si02 deposition

International Nuclear Information System (INIS)

Calix, V.M.; Peccoud, L.; Chevallier, M.

1976-09-01

Vitreous silicon dioxide films have been prepared on silicon wafers by the oxidation of SiH 2 at temperature below 360 deg C. In this experiment the samples were exposed to ultraviolet rays during deposition process. Results show that there is marked effect on the deposition rate which in turn is temperature dependent. The physical characteristics between the normal and ultraviolet-enhanced deposition show an increase of minute nodules of the latter

High-temperature bulk acoustic wave sensors

International Nuclear Information System (INIS)

Fritze, Holger

2011-01-01

Piezoelectric crystals like langasite (La 3 Ga 5 SiO 14 , LGS) and gallium orthophosphate (GaPO 4 ) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the

High-temperature bulk acoustic wave sensors

Science.gov (United States)

Fritze, Holger

2011-01-01

Piezoelectric crystals like langasite (La3Ga5SiO14, LGS) and gallium orthophosphate (GaPO4) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the Butterworth

Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

International Nuclear Information System (INIS)

Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

2016-01-01

Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

Effects of annealing temperatures on the physicochemical properties of nickel-phosphorus deposits

International Nuclear Information System (INIS)

Bai, Allen; Hu, C.-C.

2003-01-01

The dependence of physicochemical properties, including microhardness, magnetism, morphology, crystalline information, roughness factor and hydrogen evolution ability, on the phosphorus content, varying from 0 to 28 atomic percentage (at.%), of Ni-P deposits with annealing in air at eight temperatures (i.e., 100, 200, 300, 400, 500, 600, 700 and 800 deg. C) were systematically compared. The microhardness reached a maximum at 400 deg. C due to the crystallization of Ni and Ni 3 P at 400 deg. C and the significant diffusion of Cu into the Ni-P deposit at temperatures ≥500 deg. C, confirmed by the depth profiles of Ni, P, Cu and O elements. The paramagnetism of Ni-P deposit was gradually transformed into ferromagnetism at 400 deg. C, attributable to the phase separation of Ni and Ni 3 P. The roughness factor, R a , of the deposits with P contents ≤12 at.% were increased with increasing the annealing temperature at temperatures a of the deposits with 17-28 at.% of P is approximately independent of the annealing temperature. The rate of hydrogen evolution decreased with increasing the annealing temperature because the specific activity (i/R a ) of the Ni-P deposits was decreased with increasing the annealing temperature

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

International Nuclear Information System (INIS)

Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

2009-01-01

Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

Directory of Open Access Journals (Sweden)

Ningyu Ren

2017-05-01

Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

International Nuclear Information System (INIS)

Krauss, A.R.; Auciello, O.

1992-01-01

Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

Effect of substrate temperature and deposition rate on the morphology and optical properties of Ti films

Energy Technology Data Exchange (ETDEWEB)

Einollahzadeh-Samadi, M.; Dariani, R.S., E-mail: dariani@alzahra.ac.ir

2013-09-01

Titanium films are deposited on transparent fluorine-doped tin oxide (FTO) glass substrates by DC magnetron sputtering process. Influences imposed by sputtering rate and substrate temperature on surface morphology and optical properties of the deposited Ti films are investigated. We observed that all the sputtered films exhibit uniform and compact surface morphology without peeling and cracking. Morphology of the films is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD). The optical properties of the films are investigated using UV–vis spectroscopy. The morphological studies indicate that by increasing the substrate temperature from room temperature to 250 °C and/or decreasing sputtering rate from 660 Å/min to 540 Å/min the surface roughness decreased from 73.4 to 31.0 nm and the grain size increases from 50.76 nm to 163.93 nm. An important effect of the root mean square (RMS) surface roughness and grain size is modification of the films optical properties. In fact, an enhancement of refractive index n for the Ti films deposited at high substrate temperature and/or high deposition rate is observed, that is attributed to reduction of RMS roughness. This effect is attributed to increment of fractional volume which leads to an increase in density of deposited film. Thus, by controlling the sputtering conditions one can reach to the desired morphological and optical properties.

Development of materials for high temperature superconductor Josephson junctions

International Nuclear Information System (INIS)

Houlton, R.J.; Reagor, D.W.; Hawley, M.E.; Springer, K.N.; Jia, Q.X.; Mombourquette, C.B.; Garzon, F.H.; Wu, X.D.

1994-01-01

We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting SNS Functions. These films were deposited by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each material and the various combinations of materials were optimized for epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of insitu and exsitu procedures were used to produce high quality multilayer devices, including varying the nucleation temperature from the actual film growth temperature, location of the substrate during the deposition process, constant rotation of the substrate, and timing of the oxygen anneal. The unprocessed films and devices in process were characterized with Atomic Force Microscopy and Scanning Tunneling Microscopy as well as other common materials characterization techniques. Completed multilayer devices were patterned and packaged for electrical characterization. Relation between material properties and electrical characteristics is discussed

Development of materials for high temperature superconductor Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Houlton, R.J.; Reagor, D.W.; Hawley, M.E.; Springer, K.N.; Jia, Q.X.; Mombourquette, C.B.; Garzon, F.H.; Wu, X.D.

1994-10-01

We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting SNS Functions. These films were deposited by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each material and the various combinations of materials were optimized for epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of insitu and exsitu procedures were used to produce high quality multilayer devices, including varying the nucleation temperature from the actual film growth temperature, location of the substrate during the deposition process, constant rotation of the substrate, and timing of the oxygen anneal. The unprocessed films and devices in process were characterized with Atomic Force Microscopy and Scanning Tunneling Microscopy as well as other common materials characterization techniques. Completed multilayer devices were patterned and packaged for electrical characterization. Relation between material properties and electrical characteristics is discussed

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

Science.gov (United States)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

International Nuclear Information System (INIS)

Zhao, J.; Noh, D.W.; Chern, C.; Li, Y.Q.; Norris, P.E.; Kear, B.; Gallois, B.

1991-01-01

Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology

The behavior of ZrO2/20%Y2O3 and Al2O3 coatings deposited on aluminum alloys at high temperature regime

Science.gov (United States)

Pintilei, G. L.; Crismaru, V. I.; Abrudeanu, M.; Munteanu, C.; Baciu, E. R.; Istrate, B.; Basescu, N.

2015-10-01

Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO2/20%Y2O3 and Al2O3. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

Science.gov (United States)

Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

2012-01-11

Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

International Nuclear Information System (INIS)

Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-01-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Aminostratigraphic correlations and paleotemperature implications, Pliocene-Pleistocene high-sea-level deposits, northwestern Alaska

Science.gov (United States)

Kaufman, Darrell S.; Brigham-Grette, Julie

Multiple periods of Late Pliocene and Pleistocene high sea level are recorded by surficial deposits along the coastal plains of northwestern Alaska. Analyses of the extent of amino acid epimerization in fossil molluscan shells from the Nome coastal plain of the northern Bering Sea coast, and from the Alaskan Arctic Coastal Plain of the Chukchi and Beaufort Sea coasts, allow recognition of at least five intervals of higher-than-present relative sea level. Three Late Pliocene transgressions are represented at Nome by the complex and protracted Beringian transgression, and on the Arctic Coastal Plain by the Colvillian, Bigbendian, and Fishcreekian transgressions. These were followed by a lengthy period of non-marine deposition during the Early Pleistocene when sea level did not reach above its present position. A Middle Pleistocene high-sea-level event is represented at Nome by the Anvilian transgression, and on the Arctic Coastal Plain by the Wainwrightian transgression. Anvilian deposits at the type locality are considerably younger than previously thought, perhaps as young as Oxygen-Isotope Stage 11 (˜410,000 BP). Finally, the last interglacial Pelukian transgression is represented discontinuously along the shores of northwestern Alaska. Amino acid epimerization data, together with previous paleomagnetic measurements, radiometric-age determinations, and paleontologic evidence provide geochronological constraints on the sequence of marine deposits. They form the basis of regional correlations and offer a means of evaluating the post-depositional thermal history of the high-sea-level deposits. Provisional correlations between marine units at Nome and the Artic Coastal Plain indicate that the temperature difference that separates the two sites today had existed by about 3.0 Ma. Since that time, the effective diagenetic temperature was lowered by about 3-4°C at both sites, and the mean annual temperature was lowered considerably more. This temperature decrease was

Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

Science.gov (United States)

Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

2000-01-01

A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

International Nuclear Information System (INIS)

Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

1988-01-01

A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

The behavior of ZrO_2/20%Y_2O_3 and Al_2O_3 coatings deposited on aluminum alloys at high temperature regime

International Nuclear Information System (INIS)

Pintilei, G.L.; Crismaru, V.I.; Abrudeanu, M.; Munteanu, C.; Baciu, E.R.; Istrate, B.; Basescu, N.

2015-01-01

Highlights: • In both the ZrO_2/20%Y_2O_3 and Al_2O_3 coatings the high temperature caused a decrease of pores volume and a lower thickness of the interface between successive splats. • The NiCr bond layer in the sample with a ZrO_2/20%Y_2O_3 suffered a fragmentation due to high temperature exposure and thermal expansion which can lead to coating exfoliation. • The NiCr bond layer in the sample with an Al_2O_3 coating showed an increase of pore volume due to high temperature. - Abstract: Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO_2/20%Y_2O_3 and Al_2O_3. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

HIgh Temperature Photocatalysis over Semiconductors

Science.gov (United States)

Westrich, Thomas A.

Due in large part to in prevalence of solar energy, increasing demand of energy production (from all sources), and the uncertain future of petroleum energy feedstocks, solar energy harvesting and other photochemical systems will play a major role in the developing energy market. This dissertation focuses on a novel photochemical reaction process: high temperature photocatalysis (i.e., photocatalysis conducted above ambient temperatures, T ≥ 100°C). The overarching hypothesis of this process is that photo-generated charge carriers are able to constructively participate in thermo-catalytic chemical reactions, thereby increasing catalytic rates at one temperature, or maintaining catalytic rates at lower temperatures. The photocatalytic oxidation of carbon deposits in an operational hydrocarbon reformer is one envisioned application of high temperature photocatalysis. Carbon build-up during hydrocarbon reforming results in catalyst deactivation, in the worst cases, this was shown to happen in a period of minutes with a liquid hydrocarbon. In the presence of steam, oxygen, and above-ambient temperatures, carbonaceous deposits were photocatalytically oxidized over very long periods (t ≥ 24 hours). This initial experiment exemplified the necessity of a fundamental assessment of high temperature photocatalytic activity. Fundamental understanding of the mechanisms that affect photocatalytic activity as a function of temperatures was achieved using an ethylene photocatalytic oxidation probe reaction. Maximum ethylene photocatalytic oxidation rates were observed between 100 °C and 200 °C; the maximum photocatalytic rates were approximately a factor of 2 larger than photocatalytic rates at ambient temperatures. The loss of photocatalytic activity at temperatures above 200 °C is due to a non-radiative multi-phonon recombination mechanism. Further, it was shown that the fundamental rate of recombination (as a function of temperature) can be effectively modeled as a

Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

Science.gov (United States)

Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

1994-01-01

Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

Science.gov (United States)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Electrophoretic Deposition of Gallium with High Deposition Rate

Directory of Open Access Journals (Sweden)

Hanfei Zhang

2014-12-01

Full Text Available In this work, electrophoretic deposition (EPD is reported to form gallium thin film with high deposition rate and low cost while avoiding the highly toxic chemicals typically used in electroplating. A maximum deposition rate of ~0.6 μm/min, almost one order of magnitude higher than the typical value reported for electroplating, is obtained when employing a set of proper deposition parameters. The thickness of the film is shown to increase with deposition time when sequential deposition is employed. The concentration of Mg(NO32, the charging salt, is also found to be a critical factor to control the deposition rate. Various gallium micropatterns are obtained by masking the substrate during the process, demonstrating process compatibility with microfabrication. The reported novel approach can potentially be employed in a broad range of applications with Ga as a raw material, including microelectronics, photovoltaic cells, and flexible liquid metal microelectrodes.

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

International Nuclear Information System (INIS)

Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

The deposition of magnetite particles from high velocity water onto isothermal tubes

International Nuclear Information System (INIS)

Burrill, K.A.

1977-02-01

The deposition rate of magnetite particles from a high velocity water slurry onto isothermal metal tubes was measured. The effects of velocity (5 to 100 m/s), slurry concentration (200 to 1000 mg Fe/kg H 2 O), temperature (25 to 90 deg C), pH (4 to 10 at 25 deg C), and tube material (nickel, Zircaloy-4) on deposition rate were studied. The data are interpreteω in terms of two steps in series for deposition: a mass transfer step followed by a deposition or ''inertial coasting'' step. Mass transfer of particles through the bulk water phase apparently limits the deposition of particles at high Reynolds number (10 5 ). (author)

Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Energy Technology Data Exchange (ETDEWEB)

Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

2017-08-01

Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Improving Erosion Resistance of Plasma-Sprayed Ceramic Coatings by Elevating the Deposition Temperature Based on the Critical Bonding Temperature

Science.gov (United States)

Yao, Shu-Wei; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2018-01-01

Interlamellar bonding within plasma-sprayed coatings is one of the most important factors dominating the properties and performance of coatings. The interface bonding between lamellae significantly influences the erosion behavior of plasma-sprayed ceramic coatings. In this study, TiO2 and Al2O3 coatings with different microstructures were deposited at different deposition temperatures based on the critical bonding temperature concept. The erosion behavior of ceramic coatings was investigated. It was revealed that the coatings prepared at room temperature exhibit a typical lamellar structure with numerous unbonded interfaces, whereas the coatings deposited at the temperature above the critical bonding temperature present a dense structure with well-bonded interfaces. The erosion rate decreases sharply with the improvement of interlamellar bonding when the deposition temperature increases to the critical bonding temperature. In addition, the erosion mechanisms of ceramic coatings were examined. The unbonded interfaces in the conventional coatings act as pre-cracks accelerating the erosion of coatings. Thus, controlling interlamellar bonding formation based on the critical bonding temperature is an effective approach to improve the erosion resistance of plasma-sprayed ceramic coatings.

Highly Conductive Cu 2– x S Nanoparticle Films through Room-Temperature Processing and an Order of Magnitude Enhancement of Conductivity via Electrophoretic Deposition

KAUST Repository

Otelaja, Obafemi O.

2014-11-12

© 2014 American Chemical Society. A facile room-temperature method for assembling colloidal copper sulfide (Cu2-xS) nanoparticles into highly electrically conducting films is presented. Ammonium sulfide is utilized for connecting the nanoparticles via ligand removal, which transforms the as-deposited insulating films into highly conducting films. Electronic properties of the treated films are characterized with a combination of Hall effect measurements, field-effect transistor measurements, temperature-dependent conductivity measurements, and capacitance-voltage measurements, revealing their highly doped p-type semiconducting nature. The spin-cast nanoparticle films have carrier concentration of ∼1019 cm-3, Hall mobilities of ∼3 to 4 cm2 V-1 s-1, and electrical conductivities of ∼5 to 6 S·cm-1. Our films have hole mobilities that are 1-4 orders of magnitude higher than hole mobilities previously reported for heat-treated nanoparticle films of HgTe, InSb, PbS, PbTe, and PbSe. We show that electrophoretic deposition (EPD) as a method for nanoparticle film assembly leads to an order of magnitude enhancement in film conductivity (∼75 S·cm-1) over conventional spin-casting, creating copper sulfide nanoparticle films with conductivities comparable to bulk films formed through physical deposition methods. The X-ray diffraction patterns of the Cu2-xS films, with and without ligand removal, match the Djurleite phase (Cu1.94S) of copper sulfide and show that the nanoparticles maintain finite size after the ammonium sulfide processing. The high conductivities reported are attributed to better interparticle coupling through the ammonium sulfide treatment. This approach presents a scalable room-temperature route for fabricating highly conducting nanoparticle assemblies for large-area electronic and optoelectronic applications.

F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, H.; Auyeung, R.C.Y.; Pique, A.

2011-01-01

Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

International Nuclear Information System (INIS)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-01-01

The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

Science.gov (United States)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-05-01

The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

Energy Technology Data Exchange (ETDEWEB)

Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

1988-12-15

A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

Characterization of Cr–Al–C and Cr–Al–C–Y films synthesized by High Power Impulse Magnetron Sputtering at a low deposition temperature

International Nuclear Information System (INIS)

Berger, O.; Leyens, C.; Heinze, S.; Boucher, R.; Ruhnow, M.

2015-01-01

A focus point in this work was the study of the influence of a low substrate temperature, as well as the minor addition of Y (0.1–0.3 at.%), on the formation of the stable Cr 2 AlC–MAX (ternary alloy with general formula M n+1 AX n : M = early transition metal, A = A-Group element, mostly IIIA or IVA, X = C or N, n = 1–3) phase. The coatings, deposited by High Power Impulse Magnetron Sputtering, consisted of a mixture of disordered solid solution (Cr,Al) 2 C x and ordered Cr 2 AlC–MAX phase. All deposited coatings without and with 0.1–0.3 at.% Y addition were polycrystalline, and showed (110) texture and a columnar morphology. The measured strong lattice distortions along with the existence of the texture in the as-deposited samples indicate that compressive stress acts in the a–b plane and tensile perpendicular to this. A schematic model of the structural and chemical changes in the as-deposited layers due to deposition inhomogeneity and low deposition temperature, based on the X-ray diffraction, energy dispersive X-ray, scanning electron microscopy and magnetic measurements has been developed. - Highlights: • The films deposited at 450 °C both contained the MAX phase and solid solution. • The films were polycrystalline with (110) texture, and columnar growth. • Film stress was compressive in the a–b plane and tensile perpendicular to this. • No difference was found in this result upon the introduction of up to 0.3 at.% Y. • Introduction of a film structure model based on XRD, EDX, SEM and magnetic results

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.

Science.gov (United States)

Han, Ning; Wang, Fengyun; Yang, Zaixing; Yip, SenPo; Dong, Guofa; Lin, Hao; Fang, Ming; Hung, TakFu; Ho, Johnny C

2014-01-01

Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10(7) Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition. 77.55.D; 61.46.Km; 78.40.Fy.

High temperature superconducting films by rf magnetron sputtering

International Nuclear Information System (INIS)

Kadin, A.M.; Ballentine, P.H.

1989-01-01

The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors

International Nuclear Information System (INIS)

Wu Jie; Shi Junfei; Dong Chengyuan; Chen Yuting; Zhou Daxiang; Hu Zhe; Zhan Runze; Zou Zhongfei

2014-01-01

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ''optimized-annealed'' are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150 °C while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and O1s spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films. Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. (semiconductor devices)

High temperature structural ceramic materials manufactured by the CNTD process

International Nuclear Information System (INIS)

Stiglich, J.J. Jr.; Bhat, D.G.; Holzl, R.A.

1980-01-01

Controlled Nucleation Thermochemical Deposition (CNTD) has emerged from classical chemical deposition (CVD) technology. This paper describes the techniques of thermochemical grain refinement. The effects of such refinement on mechanical properties of materials at room temperature and at elevated temperatures are outlined. Emphasis is given to high temperature structural ceramic materials such as SiC, Si 3 N 4 , AlN, and TiB 2 and ZrB 2 . An example of grain refinement accompanied by improvements in mechanical properties is SiC. Grain sizes of 500 to 1000 A have been observed in CNTD SiC with room temperature MOR of 1380 to 2070 MPa (4 pt bending) and MOR of 3450 to 4140 MPa (4 pt bending) at 1350 0 C. Various applications of these materials to the solution of high temperature structural problems are described. (author)

Monitoring Streambed Scour/Deposition Under Nonideal Temperature Signal and Flood Conditions

Science.gov (United States)

DeWeese, Timothy; Tonina, Daniele; Luce, Charles

2017-12-01

Streambed erosion and deposition are fundamental geomorphic processes in riverbeds, and monitoring their evolution is important for ecological system management and in-stream infrastructure stability. Previous research showed proof of concept that analysis of paired temperature signals of stream and pore waters can simultaneously provide monitoring scour and deposition, stream sediment thermal regime, and seepage velocity information. However, it did not address challenges often associated with natural systems, including nonideal temperature variations (low-amplitude, nonsinusoidal signal, and vertical thermal gradients) and natural flooding conditions on monitoring scour and deposition processes over time. Here we addressed this knowledge gap by testing the proposed thermal scour-deposition chain (TSDC) methodology, with laboratory experiments to test the impact of nonideal temperature signals under a range of seepage velocities and with a field application during a pulse flood. Both analyses showed excellent match between surveyed and temperature-derived bed elevation changes even under very low temperature signal amplitudes (less than 1°C), nonideal signal shape (sawtooth shape), and strong and changing vertical thermal gradients (4°C/m). Root-mean-square errors on predicting the change in streambed elevations were comparable with the median grain size of the streambed sediment. Future research should focus on improved techniques for temperature signal phase and amplitude extractions, as well as TSDC applications over long periods spanning entire hydrographs.

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.

Energy Technology Data Exchange (ETDEWEB)

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Golshahi, S., E-mail: golshahi@iaurasht.ac.ir [Department of Physics, Rasht Branch, Islamic Azad University, Rasht (Iran, Islamic Republic of); Rozati, S.M. [Department of Physics, University of Guilan, 41335-1914 Rasht (Iran, Islamic Republic of); Botelho do Rego, A.M. [Centro de Quimica-Fisica Molecular and IN, Technical University of Lisbon, IST 1049-001 Lisboa (Portugal); Wang, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Elangovan, E.; Martins, R.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa (UNL), 2829-516 Caparica (Portugal)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Hall-effect measurement introduces the optimum temperature of 450 Degree-Sign C for fabricating p-type high quality ZnO films. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. Black-Right-Pointing-Pointer Films prepared at lower substrate temperature (300 Degree-Sign C and 350 Degree-Sign C) own wider band gaps. Black-Right-Pointing-Pointer Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T{sub s}) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T{sub s} was varied from 300 Degree-Sign C to 500 Degree-Sign C, with a step of 50 Degree-Sign C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 Degree-Sign C and 500 Degree-Sign C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T{sub s}. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 Degree-Sign C is the optimal T{sub s}. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T{sub s} until 400 Degree-Sign C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T{sub s}. The optical band gap calculated from the absorption edge showed that the films deposited with T{sub s} of 300 Degree-Sign C and 350 Degree-Sign C possess higher values than those deposited at higher T{sub s}.

Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

International Nuclear Information System (INIS)

Golshahi, S.; Rozati, S.M.; Botelho do Rego, A.M.; Wang, J.; Elangovan, E.; Martins, R.; Fortunato, E.

2013-01-01

Highlights: ► Hall-effect measurement introduces the optimum temperature of 450 °C for fabricating p-type high quality ZnO films. ► X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. ► Films prepared at lower substrate temperature (300 °C and 350 °C) own wider band gaps. ► Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T s ) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T s was varied from 300 °C to 500 °C, with a step of 50 °C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 °C and 500 °C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T s . The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 °C is the optimal T s . Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T s until 400 °C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T s . The optical band gap calculated from the absorption edge showed that the films deposited with T s of 300 °C and 350 °C possess higher values than those deposited at higher T s .

Ceramics for high temperature applications

International Nuclear Information System (INIS)

Mocellin, A.

1977-01-01

Problems related to materials, their fabrication, properties, handling, improvements are examined. Silicium nitride and silicium carbide are obtained by vacuum hot-pressing, reaction sintering and chemical vapour deposition. Micrographs are shown. Mechanical properties i.e. room and high temperature strength, creep resistance fracture mechanics and fatigue resistance. Recent developments of pressureless sintered Si C and the Si-Al-O-N quaternary system are mentioned

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Science.gov (United States)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

Solid State Track Recorder fission rate measurements at high neutron fluence and high temperature

International Nuclear Information System (INIS)

Ruddy, F.H.; Roberts, J.H.; Gold, R.

1985-01-01

Solid State Track Recorder (SSTR) techniques have been used to measure 239-Pu, 235-U, and 237-Np fission rates for total neutron fluences approaching 5 x 10 17 n/cm 2 at temperatures in the range 680 to 830 0 F. Natural quartz crystal SSTRs were used to withstand the high temperature environment and ultra low-mass fissionable deposits of the three isotopes were required to yield scannable track densities at the high neutron fluences. The results of these high temperature, high neutron fluence measurements are reported

Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

NARCIS (Netherlands)

Macco, B.; Vos, M.; Thissen, N.F.W.; Bol, A.A.; Kessels, W.M.M.

2015-01-01

The preparation of high-quality molybdenum oxide (MoOx) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO3, and free of other elements apart from hydrogen (&11 at%). The

Ultras-stable Physical Vapor Deposited Amorphous Teflon Films with Extreme Fictive Temperature Reduction

Science.gov (United States)

McKenna, Gregory; Yoon, Heedong; Koh, Yung; Simon, Sindee

In the present work, we have produced highly stable amorphous fluoropolymer (Teflon AF® 1600) films to study the calorimetric and relaxation behavior in the deep in the glassy regime. Physical vapor deposition (PVD) was used to produce 110 to 700 nm PVD films with substrate temperature ranging from 0.70 Tg to 0.90 Tg. Fictive temperature (Tf) was measured using Flash DSC with 600 K/s heating and cooling rates. Consistent with prior observations for small molecular weight glasses, large enthalpy overshoots were observed in the stable amorphous Teflon films. The Tf reduction for the stable Teflon films deposited in the vicinity of 0.85 Tg was approximately 70 K compared to the Tgof the rejuvenated system. The relaxation behavior of stable Teflon films was measured using the TTU bubble inflation technique and following Struik's protocol in the temperature range from Tf to Tg. The results show that the relaxation time decreases with increasing aging time implying that devitrification is occurring in this regime.

Thick sputtered tantalum coatings for high-temperature energy conversion applications

Energy Technology Data Exchange (ETDEWEB)

Stelmakh, Veronika, E-mail: stelmakh@mit.edu; Peykov, Daniel; Chan, Walker R.; Senkevich, Jay J.; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Castillo, Robert; Coulter, Kent; Wei, Ronghua [Materials Engineering Department, Southwest Research Institute, San Antonio, Texas 78238 (United States)

2015-11-15

Thick sputtered tantalum (Ta) coatings on polished Inconel were investigated as a potential replacement for bulk refractory metal substrates used for high-temperature emitters and absorbers in thermophotovoltaic energy conversion applications. In these applications, high-temperature stability and high reflectance of the surface in the infrared wavelength range are critical in order to sustain operational temperatures and reduce losses due to waste heat. The reflectance of the coatings (8 and 30 μm) was characterized with a conformal protective hafnia layer as-deposited and after one hour anneals at 700, 900, and 1100 °C. To further understand the high-temperature performance of the coatings, the microstructural evolution was investigated as a function of annealing temperature. X-ray diffraction was used to analyze the texture and residual stress in the coatings at four reflections (220, 310, 222, and 321), as-deposited and after anneal. No significant changes in roughness, reflectance, or stress were observed. No delamination or cracking occurred, even after annealing the coatings at 1100 °C. Overall, the results of this study suggest that the thick Ta coatings are a promising alternative to bulk substrates and pave the way for a relatively low-cost and easily integrated platform for nanostructured devices in high-temperature energy conversion applications.

Low-temperature atomic layer deposition of MoO{sub x} for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Macco, B.; Vos, M.F.J.; Thissen, N.F.W.; Bol, A.A. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

2015-07-15

The preparation of high-quality molybdenum oxide (MoO{sub x}) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 C. The films are amorphous, slightly substoichiometric with respect to MoO{sub 3}, and free of other elements apart from hydrogen (<11 at%). The films have a high transparency in the visible region and their compatibility with a-Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoO{sub x} in hole-selective contacts for silicon heterojunction solar cells. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low pressure chemical vapour deposition of temperature resistant colour filters

International Nuclear Information System (INIS)

Verheijen, J.; Bongaerts, P.; Verspui, G.

1987-01-01

The possibility to deposit multilayer colour filters, based on optical inference, by means of Low Pressure Chemical Vapour Deposition (LPCVD) was investigated. The filters were made in a standard LPCVD system by alternate deposition of Si/sub 3/N/sub 4/ and SiO/sub 2/ layers. This resulted in filters with excellent colour uniformity on glass and quartz substrates. No difference was measured between theoretically calculated transmission and the transmission of the filters deposited by LPCVD. Temperature treatment at 600 0 C in air air showed no deterioration of filter quality and optical properties

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

2012-01-01

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

International Nuclear Information System (INIS)

Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

1983-01-01

The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

Porous nuclear fuel element for high-temperature gas-cooled nuclear reactors

Science.gov (United States)

Youchison, Dennis L [Albuquerque, NM; Williams, Brian E [Pacoima, CA; Benander, Robert E [Pacoima, CA

2011-03-01

Porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's), and to processes for fabricating them. Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, the nuclear fuel may be deposited inside of a highly porous skeletal structure made of, for example, reticulated vitreous carbon foam.

Cathodic deposition of CdSe films from dimethyl formamide solution at optimized temperature

Energy Technology Data Exchange (ETDEWEB)

Datta, J. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India)]. E-mail: jayati_datta@rediffmail.com; Bhattacharya, C. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India); Visiting Research Associate, School of Materials Science and Engineering, UNSW (Australia); Bandyopadhyay, S. [School of Materials Science and Engineering, UNSW, Sydney 2052 (Australia)

2006-12-15

In the present paper, thin film CdSe compound semiconductors have been electroplated on transparent conducting oxide coated glass substrates from nonaqueous dimethyl formamide bath containing CdCl{sub 2}, KI and Se under controlled temperature ranging from 100 to 140 deg. C. Thickness of the deposited films as obtained through focussed ion beam technique as well as their microstructural and photoelectrochemical properties have been found to depend on temperature. The film growth was therefore optimized at a bath temperature {approx}125 deg. C. The formation of crystallites in the range of 100-150 nm size has been ascertained through atomic force microscopy and scanning electron microscopy. Energy dispersive analysis of X-rays for the as deposited film confirmed the 1:1 composition of CdSe compound in the matrix exhibiting band-gap energy of 1.74 eV. Microstructural properties of the deposited films have been determined through X-ray diffraction studies, high-resolution transmission electron microscopy and electron diffraction pattern analysis. Electrochemical impedance spectroscopy and current-potential measurements have been performed to characterize the electrochemical behavior of the semiconductor-electrolyte interface. The photo-activity of the films have been recorded in polysulphide solution under illumination and solar conversion efficiency {>=}1% was achieved.

The Coupling Effect Research of Ash Deposition and Condensation in Low Temperature Flue Gas

Directory of Open Access Journals (Sweden)

Lei Ma

2016-01-01

Full Text Available Ash deposition is a key factor that deteriorates the heat transfer performance and leads to higher energy consumption of low pressure economizer working in low temperature flue gas. In order to study the ash deposition of heat exchange tubes in low temperature flue gas, two experiments are carried out with different types of heat exchange tubes in different flue gas environments. In this paper, Nusselt Number Nu and fouling factor ε are calculated to describe the heat transfer characteristics so as to study the ash deposition condition. The scanning electron microscope (SEM is used for the analysis of ash samples obtained from the outer wall of heat exchange tubes. The dynamic process of ash deposition is studied under different temperatures of outer wall. The results showed that ash deposition of heat exchanger will achieve a stable state in constant flue gas environment. According to the condition of condensation of acid vapor and water vapor, the process of ash deposition can be distinguished as mere ash deposition, acid-ash coupling deposition, and acid-water-ash coupling deposition.

Metallic Membranes for High Temperature Hydrogen Separation

DEFF Research Database (Denmark)

Ma, Y.H.; Catalano, Jacopo; Guazzone, Federico

2013-01-01

membrane fabrication methods have matured over the last decades, and the deposition of very thin films (1–5 µm) of Pd over porous ceramics or modified porous metal supports is quite common. The H2 permeances and the selectivities achieved at 400–500 °C were in the order of 50–100 Nm3/m/h/bar0.5 and greater......Composite palladium membranes have extensively been studied in laboratories and, more recently, in small pilot industrial applications for the high temperature separation of hydrogen from reactant mixtures such as water-gas shift (WGS) reaction or methane steam reforming (MSR). Composite Pd...... than 1000, respectively. This chapter describes in detail composite Pd-based membrane preparation methods, which consist of the grading of the support and the deposition of the dense metal layer, their performances, and their applications in catalytic membrane reactors (CMRs) at high temperatures (400...

High-temperature fabrication of Ag(In,Ga)Se{sub 2} thin films for applications in solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xianfeng [International Center for Science and Engineering Programs, Waseda University, Tokyo (Japan); Yamada, Akira [Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science, Waseda University, Tokyo (Japan)

2017-10-15

Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se{sub 2} (AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabricate AIGS films. The as-grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and annealing temperature. For high-temperature deposition, temperatures over 600 C led to decomposition of the AIGS film, desorption of In, and deterioration of its crystallinity. The most appropriate deposition temperature was 590 C and a solar cell with a power conversion efficiency of 4.1% was obtained. High-temperature annealing of the AIGS thin films showed improved crystallinity as annealing temperature was increased and film decomposition and In desorption were prevented. A solar cell based on this film showed the highest conversion efficiency of 6.4% when annealed at 600 C. When the annealing temperature was further increased to 610 C, the performance of the cell deteriorated due to loss of the out-of-plane Ga gradient. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

International Nuclear Information System (INIS)

Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

2006-01-01

The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

International Nuclear Information System (INIS)

Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

2017-01-01

Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

Impurities in chromium deposits produced by electroplating and physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Dini, J.W.

1994-05-01

Impurity contents in electrodeposited (hexavalent and trivalent) chromium deposits and physically vapor deposited (thermal evaporation, electron beam evaporation and rf-sputtering) were compared. Oxygen is the key impurity obtained in electrodeposited films but it can be minimized in hexavalent plating solutions by operating at high temperature, e. g., 85 C. Electrodeposits produced in trivalent chromium plating solutions and physically vapor deposited films have much higher oxygen contents than electrodeposits produced in hexavalent chromium solutions operated at temperatures around 85 C. Depending on the target material used for physically vapor deposited films, these films can also have high amounts of other impurities.

Surface properties of magnetite in high temperature aqueous electrolyte solutions: A review.

Science.gov (United States)

Vidojkovic, Sonja M; Rakin, Marko P

2017-07-01

Deposits and scales formed on heat transfer surfaces in power plant water/steam circuits have a significant negative impact on plant reliability, availability and performance, causing tremendous economic consequences and subsequent increases in electricity cost. Consequently, the improvement of the understanding of deposition mechanisms on power generating surfaces is defined as a high priority in the power industry. The deposits consist principally of iron oxides, which are steel corrosion products and usually present in colloidal form. Magnetite (Fe 3 O 4 ) is the predominant and most abundant compound found in water/steam cycles of all types of power plants. The crucial factor that governs the deposition process and influences the deposition rate of magnetite is the electrostatic interaction between the metal wall surfaces and the suspended colloidal particles. However, there is scarcity of data on magnetite surface properties at elevated temperatures due to difficulties in their experimental measurement. In this paper a generalized overview of existing experimental data on surface characteristics of magnetite at high temperatures is presented with particular emphasis on possible application in the power industry. A thorough analysis of experimental techniques, mathematical models and results has been performed and directions for future investigations have been considered. The state-of-the-art assessment showed that for the characterization of magnetite/aqueous electrolyte solution interface at high temperatures acid-base potentiometric titrations and electrophoresis were the most beneficial and dependable techniques which yielded results up to 290 and 200°C, respectively. Mass titrations provided data on magnetite surface charge up to 320°C, however, this technique is highly sensitive to the minor concentrations of impurities present on the surface of particle. Generally, fairly good correlation between the isoelectric point (pH iep ) and point of zero charge

Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

International Nuclear Information System (INIS)

Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

2007-01-01

Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

Science.gov (United States)

Vajente, G.; Birney, R.; Ananyeva, A.; Angelova, S.; Asselin, R.; Baloukas, B.; Bassiri, R.; Billingsley, G.; Fejer, M. M.; Gibson, D.; Godbout, L. J.; Gustafson, E.; Heptonstall, A.; Hough, J.; MacFoy, S.; Markosyan, A.; Martin, I. W.; Martinu, L.; Murray, P. G.; Penn, S.; Roorda, S.; Rowan, S.; Schiettekatte, F.; Shink, R.; Torrie, C.; Vine, D.; Reid, S.; Adhikari, R. X.

2018-04-01

Brownian thermal noise in dielectric multilayer coatings limits the sensitivity of current and future interferometric gravitational wave detectors. In this work we explore the possibility of improving the mechanical losses of tantala, often used as the high refractive index material, by depositing it on a substrate held at elevated temperature. Promising results have been previously obtained with this technique when applied to amorphous silicon. We show that depositing tantala on a hot substrate reduced the mechanical losses of the as-deposited coating, but subsequent thermal treatments had a larger impact, as they reduced the losses to levels previously reported in the literature. We also show that the reduction in mechanical loss correlates with increased medium range order in the atomic structure of the coatings using x-ray diffraction and Raman spectroscopy. Finally, a discussion is included on our results, which shows that the elevated temperature deposition of pure tantala coatings does not appear to reduce mechanical loss in a similar way to that reported in the literature for amorphous silicon; and we suggest possible future research directions.

Passivation Of High-Temperature Superconductors

Science.gov (United States)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

High-energy high-rate pulsed-power processing of materials by powder consolidation and by railgun deposition. Technical report (Final), 10 April 1985-10 February 1987

Energy Technology Data Exchange (ETDEWEB)

Persad, C.; Marcus, H.L.; Weldon, W.F.

1987-03-31

This exploratory research program was initiated to investigate the potential of using pulse power sources for powder consolidation, deposition and other high-energy high-rate processing. The characteristics of the high-energy-high-rate (1MJ/s) powder consolidation using megampere current pulses from a homopolar generator, were defined. Molybdenum Alloy TZM, a nickel-based metallic glass, copper/graphite composites, and P/M aluminum alloy X7091 were investigated. The powder-consolidation process produced high densification rates. Density values of 80% to 99% could be obtained with subsecond high-temperature exposure. Specific energy input and applied pressure were controlling process parameters. Time temperature transformation (TTT) concepts underpin a fundamental understanding of pulsed power processing. Inherent control of energy input, and time-to-peak processing temperature developed to be held to short times. Deposition experiments were conducted using an exploding-foil device (EFD) providing an armature feed to railgun mounted in a vacuum chamber. The material to be deposited - in plasma, gas, liquid, or solid state - was accelerated electromagnetically in the railgun and deposited on a substrate. Deposits of a wide variety of single- and multi-specie materials were produced on several types of substrates. In a series of ancillary experiments, pulsed-skin-effect heating and self quenching of metallic conductors was discovered to be a new means of surface modification by high-energy high-rate-processing.

Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

International Nuclear Information System (INIS)

Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

2006-01-01

We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

NARCIS (Netherlands)

Verkerk, A.D.; de Jong, M.M.; Rath, J.K.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

2009-01-01

In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by

Automatic temperature compensating apparatus for measurement of thin films during deposition

Science.gov (United States)

Generosi, R.; Miriametro, A.

1982-09-01

This work describes the construction of a quartz resonator capable of measuring the thickness of deposited thin films with very high precision. A voltage-to-frequency converter is used as a reference oscillator. Temperature variations during the evaporation process, produced by both thermal irradiation and atomic bombardments, are monitored by an iron-constantan thermocouple which is used to generate a compensating signal at the input of the converter. The system also allows accurate measurement of the growth rate.

Effect of deposition temperature on the bonding configurations and properties of fluorine doped silicon oxide film

International Nuclear Information System (INIS)

Lu, Wei-Lun; Kuo, Ting-Wei; Huang, Chun-Hsien; Wang, Na-Fu; Tsai, Yu-Zen; Wang, Ming-Wei; Hung, Chen-I.; Houng, Mau-Phon

2011-01-01

In our study, fluorine-doped silicon oxide (SiOF) films were prepared using a mixture of SiH 4 , N 2 O, and CF 4 in a conventional plasma enhanced chemical vapor deposition system at various deposition temperatures. Deposition behaviors are determined by the deposition temperature. Our results show that for temperatures below 300 deg. C the process is surface-reaction-limited controlled, but becomes diffusion-limited when the deposition temperature exceeds 300 deg. C. The surface topography images obtained using an atomic force microscope show that a large amount of free volume space was created in the film with a low temperature deposition. The optical microscope and secondary ion mass spectrometer analyses show that precipitates were produced at the near-surface at the deposition temperature of 150 deg. C with a higher fluorine concentration of 2.97 at.%. Our results show that the properties of the SiOF film are controlled not only by the free volume space but also by the fluorine concentration. An optimal SiOF film prepared at a temperature of 200 deg. C shows a low dielectric constant of 3.55, a leakage current of 1.21 x 10 -8 A/cm 2 at 1 MV/cm, and a fluorine concentration of 2.5 at.%.

High transition temperature superconducting integrated circuit

International Nuclear Information System (INIS)

DiIorio, M.S.

1985-01-01

This thesis describes the design and fabrication of the first superconducting integrated circuit capable of operating at over 10K. The primary component of the circuit is a dc SQUID (Superconducting QUantum Interference Device) which is extremely sensitive to magnetic fields. The dc SQUID consists of two superconductor-normal metal-superconductor (SNS) Josephson microbridges that are fabricated using a novel step-edge process which permits the use of high transition temperature superconductors. By utilizing electron-beam lithography in conjunction with ion-beam etching, very small microbridges can be produced. Such microbridges lead to high performance dc SQUIDs with products of the critical current and normal resistance reaching 1 mV at 4.2 K. These SQUIDs have been extensively characterized, and exhibit excellent electrical characteristics over a wide temperature range. In order to couple electrical signals into the SQUID in a practical fashion, a planar input coil was integrated for efficient coupling. A process was developed to incorporate the technologically important high transition temperature superconducting materials, Nb-Sn and Nb-Ge, using integrated circuit techniques. The primary obstacles were presented by the metallurgical idiosyncrasies of the various materials, such as the need to deposit the superconductors at elevated temperatures, 800-900 0 C, in order to achieve a high transition temperature

Aligned, plasma sprayed SmCo5 deposits

International Nuclear Information System (INIS)

Kumar, K.; Das, D.

1986-01-01

Highly aligned SmCo 5 deposits were produced using plasma spraying. c-axis alignment, normal to the plane of the deposit, was achieved by depositing the Sm-Co alloys on steel substrates maintained at high temperatures. The substrates were heated by the plasma flame to obtain the high temperatures. The attainment of a range of substrate temperatures was made possible through control over the geometry of the substrate

Progress on Low-Temperature Pulsed Electron Deposition of CuInGaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Massimo Mazzer

2016-03-01

Full Text Available The quest for single-stage deposition of CuInGaSe2 (CIGS is an open race to replace very effective but capital intensive thin film solar cell manufacturing processes like multiple-stage coevaporation or sputtering combined with high pressure selenisation treatments. In this paper the most recent achievements of Low Temperature Pulsed Electron Deposition (LTPED, a novel single stage deposition process by which CIGS can be deposited at 250 °C, are presented and discussed. We show that selenium loss during the film deposition is not a problem with LTPED as good crystalline films are formed very close to the melting temperature of selenium. The mechanism of formation of good ohmic contacts between CIGS and Mo in the absence of any MoSe2 transition layers is also illustrated, followed by a brief summary of the measured characteristics of test solar cells grown by LTPED. The 17% efficiency target achieved by lab-scale CIGS devices without bandgap modulation, antireflection coating or K-doping is considered to be a crucial milestone along the path to the industrial scale-up of LTPED. The paper ends with a brief review of the open scientific and technological issues related to the scale-up and the possible future applications of the new technology.

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Science.gov (United States)

Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

2017-08-01

In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

International Nuclear Information System (INIS)

Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

2014-01-01

The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

International Nuclear Information System (INIS)

Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

2011-01-01

Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

YSZ thin films deposited on NiO-CSZ anodes by pulsed injection MOCVD for intermediate temperature-SOFC applications

International Nuclear Information System (INIS)

Garcia, G.; Pardo, J.A.; Santiso, J.; Merino, R.I.; Orera, V.M.; Larrea, A.; Pena, J.I.; Laguna-Bercero, M.A.; Figueras, A.

2004-01-01

Yttria-stabilized zirconia (YSZ) films are prepared on NiO-CaSZ by PIMOCVD (pulsed injection metal organic chemical vapor deposition). High quality, 5 to 10 μm thick, totally dense YSZ layers are prepared by controlling the oxygen partial pressure during the deposition. YSZ solid electrolyte deposition onto Ni-YSZ eutectic substrate is found to be a promising combination with regard to intermediate-temperature solid-oxide fuel cell applications. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Potential high temperature corrosion problems due to co-firing of biomass and fossil fuels

DEFF Research Database (Denmark)

Montgomery, Melanie; Vilhelmsen, T.; Jensen, S.A.

2007-01-01

Over the past years, considerable high temperature corrosion problems have been encountered when firing biomass in power plants due to the high content of potassium chloride in the deposits. Therefore to combat chloride corrosion problems co-firing of biomass with a fossil fuel has been undertaken....... This results in potassium chloride being converted to potassium sulphate in the combustion chamber and it is sulphate rich deposits that are deposited on the vulnerable metallic surfaces such as high temperature superheaters. Although this removes the problem of chloride corrosion, other corrosion mechanisms...... appear such as sulphidation and hot corrosion due to sulphate deposits. At Studstrup power plant Unit 4, based on trials with exposure times of 3000 hours using 0-20% straw co-firing with coal, the plant now runs with a fuel of 10% straw + coal. After three years exposure in this environment...

Impedance measurements on Au microelectrodes using controlled atmosphere high temperature scanning probe microscope

DEFF Research Database (Denmark)

Wu, Yuehua; Hansen, Karin Vels; Jacobsen, Torben

2011-01-01

High temperature impedance measurements on Au microelectrodes deposited on polished yttria stabilized zirconia (YSZ) pellets were demonstrated using a newly designed controlled atmosphere high temperature scanning probe microscope (CAHT-SPM). Probes based on Pt0.8Ir0.2 were fabricated and employed...

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

KAUST Repository

Nayak, Pradipta K.

2012-05-16

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO_2 films

International Nuclear Information System (INIS)

Chen, Xian; Zhang, Jing; Zhao, Yu-Qing

2017-01-01

Highlights: • The surface roughness of a-TiO_2 films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO_2 films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO_2 thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

Electrochemical deposition of TiB2 in high temperature molten salts

International Nuclear Information System (INIS)

Fastner, U.; Steck, T.; Pascual, A.; Fafilek, G.; Nauer, G.E.

2008-01-01

The electrochemical deposition of TiB 2 out of a NaCl-KCl-NaF-KBF 4 -K 2 TiF 6 electrolyte at 600 deg. C was tested on steel and molybdenum substrates using various current programs. The characterisation of the deposited layers has been carried out by X-ray diffraction methods, scanning electron microscopy and microhardness measurements. The pulse sequences and the current densities used influence in a significant way the homogeneity of the layers deposited, the crystal size, the texture and other physical properties like electrical and thermal conductivity. The microhardness range was up to 2900 HV, smooth and dense layers were prepared at a pulse frequency of 100 Hz

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

NARCIS (Netherlands)

Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

2010-01-01

An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu{sup 2+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Nyenge, R.L. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Physics Department, Kenyatta University, P.O. Box 43844-0100, Nairobi (Kenya); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

2016-01-01

The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu{sup 2+}. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Science.gov (United States)

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

2011-01-01

Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 deg. C down to 450 deg. C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

Science.gov (United States)

Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

2011-06-01

Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

International Nuclear Information System (INIS)

Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

2013-01-01

FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

Low-Temperature Crystalline Titanium Dioxide by Atomic Layer Deposition for Dye-Sensitized Solar Cells

KAUST Repository

Chandiran, Aravind Kumar

2013-04-24

Low-temperature processing of dye-sensitized solar cells (DSCs) is crucial to enable commercialization with low-cost, plastic substrates. Prior studies have focused on mechanical compression of premade particles on plastic or glass substrates; however, this did not yield sufficient interconnections for good carrier transport. Furthermore, such compression can lead to more heterogeneous porosity. To circumvent these problems, we have developed a low-temperature processing route for photoanodes where crystalline TiO2 is deposited onto well-defined, mesoporous templates. The TiO2 is grown by atomic layer deposition (ALD), and the crystalline films are achieved at a growth temperature of 200 C. The ALD TiO2 thickness was systematically studied in terms of charge transport and performance to lead to optimized photovoltaic performance. We found that a 15 nm TiO2 overlayer on an 8 μm thick SiO2 film leads to a high power conversion efficiency of 7.1% with the state-of-the-art zinc porphyrin sensitizer and cobalt bipyridine redox mediator. © 2013 American Chemical Society.

Computer Simulation of Temperature Parameter for Diamond Formation by Using Hot-Filament Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Chang Weon Song

2017-12-01

Full Text Available To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in a hot filament chemical vapor deposition (HF-CVD system. In this study, the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16, and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software ANSYS-FLUENT. To account for radiative heat-transfer in the HF-CVD reactor, the discrete ordinate (DO model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512–2802 K and 1076–1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with the experimental temperatures measured using a two-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

High temperature blankets for the production of synthetic fuels

International Nuclear Information System (INIS)

Powell, J.R.; Steinberg, M.; Fillo, J.; Makowitz, H.

1977-01-01

The application of very high temperature blankets to improved efficiency of electric power generation and production of H 2 and H 2 based synthetic fuels is described. The blanket modules have a low temperature (300 to 400 0 C) structure (SS, V, Al, etc.) which serves as the vacuum/coolant pressure boundary, and a hot (>1000 0 C) thermally insulated interior. Approximately 50 to 70% of the fusion energy is deposited in the hot interior because of deep penetration by high energy neutrons. Separate coolant circuits are used for the two temperature zones: water for the low temperature structure, and steam or He for the hot interior. Electric generation efficiencies of approximately 60% and H 2 production efficiencies of approximately 50 to 70%, depending on design, are projected for fusion reactors using these high temperature blankets

Surface coating of ceria nanostructures for high-temperature oxidation protection

Science.gov (United States)

Aadhavan, R.; Bhanuchandar, S.; Babu, K. Suresh

2018-04-01

Stainless steels are used in high-temperature structural applications but suffer from degradation at an elevated temperature of operation due to thermal stress which leads to spallation. Ceria coating over chromium containing alloys induces protective chromia layer formation at alloy/ceria interface thereby preventing oxidative degradation. In the present work, three metals of differing elemental composition, namely, AISI 304, AISI 410, and Inconel 600 were tested for high-temperature stability in the presence and absence of ceria coating. Nanoceria was used as the target to deposit the coating through electron beam physical vapor deposition method. After isothermal oxidation at 1243 K for 24 h, Ceria coated AISI 304 and Inconel 600 exhibited a reduced rate of oxidation by 4 and 1 orders, respectively, in comparison with the base alloy. The formation of spinel structure was found to be lowered in the presence of ceria due to the reduced migration of cations from the alloy.

Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

2013-06-20

Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

Characterization of fluorinated silica thin films with ultra-low refractive index deposited at low temperature

Energy Technology Data Exchange (ETDEWEB)

Abbasi-Firouzjah, Marzieh [Semnan Science and Technology Park, 3614933578, Shahrood (Iran, Islamic Republic of); Shokri, Babak, E-mail: b-shokri@sbu.ac.ir [Laser & Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Physics Department, Shahid Beheshti University, G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of)

2015-02-27

Structural and optical properties of low refractive index fluorinated silica (SiO{sub x}C{sub y}F{sub z}) films were investigated. The films were deposited on p-type silicon and polycarbonate substrates by radio frequency plasma enhanced chemical vapor deposition method at low temperatures. A mixture of tetraethoxysilane vapor, oxygen, and CF{sub 4} was used for deposition of the films. The influence of oxygen flow rate on the elemental compositions, chemical bonding states and surface roughness of the films was studied using energy dispersive X-ray analyzer, Fourier transform infrared spectroscopy in reflectance mode and atomic force microscopy, respectively. Effects of chemical bonds of the film matrix on optical properties and chemical stability were discussed. Energy dispersive spectroscopy showed high fluorine content in the SiO{sub x}C{sub y}F{sub z} film matrix which is in the range of 7.6–11.3%. It was concluded that in fluorine content lower than a certain limit, chemical stability of the film enhances, while higher contents of fluorine heighten moisture absorption followed by increasing refractive index. All of the deposited films were highly transparent. Finally, it was found that the refractive index of the SiO{sub x}C{sub y}F{sub z} film was continuously decreased with the increase of the O{sub 2} flow rate down to the minimum value of 1.16 ± 0.01 (at 632.8 nm) having the most ordered and nano-void structure and the least organic impurities. This sample also had the most chemical stability against moisture absorption. - Highlights: • Low deposition temperature and organic precursor led to higher film fluorination. • High fluorine and nanovoid structure led to drastic decrease in the refractive index. • Silica based thin film with ultralow refractive index of 1.16 was produced. • The produced ultralow-n film is highly stable against moisture absorption.

PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

Energy Technology Data Exchange (ETDEWEB)

Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

1993-11-01

The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)

Potential high temperature corrosion problems due to co-firing of biomass and fossil fuels

DEFF Research Database (Denmark)

Montgomery, Melanie; Vilhelmsen, T.; Jensen, S.A.

2008-01-01

Over the past few years, considerable high temperature corrosion problems have been encountered when firing biomass in power plants due to the high content of potassium chloride in the deposits. Therefore, to combat chloride corrosion problems cofiring of biomass with a fossil fuel has been...... undertaken. This results in potassium chloride being converted to potassium sulphate in the combustion chamber and it is sulphate rich deposits that are deposited on the vulnerable metallic surfaces such as high temperature superheaters. Although this removes the problem of chloride corrosion, other...... corrosion mechanisms appear such as sulphidation and hot corrosion due to sulphate deposits. At Studstrup power plant Unit 4, based on trials with exposure times of 3000 h using 0–20% straw co-firing with coal, the plant now runs with a fuel mix of 10% strawþcoal. Based on results from a 3 years exposure...

Solubilities of iron and nickel oxides under high temperature and high pressure conditions

International Nuclear Information System (INIS)

Choi, Ke-Chon; Jung, Yong-Ju; Yeon, Jei-Won; Jee, Kwang-Yong

2007-01-01

The purposes of primary coolant chemistry are to assure fuel and material integrity and to minimize out of core radiation fields. During the PWR operation, crud deposits are expected on the cladding, leading to cladding failure and raising the radioactivity. Such deposits come from the corrosion products of system surface. To achieve optimal conditions for primary coolant, basic researches on mass transfer, deposition and solubility of corrosion products are needed. The initial stage of crud formation could be the studies on the solubility of a structural material. It has been known that the solubility of metal oxides in boric acid under high temperature and high pressure condition depends on the pH and dissolved hydrogen. Thus, the effect of various pH on the solubility of metal oxide in boric acid solution was investigated in this work

Low temperature synthesis of Zn nanowires by physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Philipp; Kast, Michael; Brueckl, Hubert [Austrian Research Centers GmbH ARC, Nano- Systemtechnologies, Donau-City-Strasse 1, A-1220 Wien (Austria)

2007-07-01

We demonstrate catalytic growth of zinc nanowires by physical vapor deposition at modest temperatures of 125-175 C on various substrates. In contrast to conventional approaches using tube furnaces our home-built growth system allows to control the vapor sources and the substrate temperature separately. The silicon substrates were sputter coated with a thin gold layer as metal catalyst. The samples were heated to the growth temperature and subsequently exposed to the zinc vapor at high vacuum conditions. The work pressure was adjusted by the partial pressure of oxygen or argon flow gas. Scanning electron microscopy and atomic force microscopy characterizations revealed that the nanowires exhibit straight, uniform morphology and have diameters in the range of 50-350 nm and lengths up to 70 {mu}m. The Zn nanowires grow independently of the substrates crystal orientation via a catalytic vapor-solid growth mechanism. Since no nanowire formation was observed without gold coating, we expect that the onedimensional growth is initiated by a surface reactive Au seed. ZnO nanowires can be produced in the same preparation chamber by oxidation at 500 C in 1atm (80% Ar, 20% O{sub 2}) for 1 hour. ZnO is highly attractive for sensor applications.

Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

International Nuclear Information System (INIS)

Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

2007-01-01

Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

International Nuclear Information System (INIS)

Laatar, F.; Harizi, A.; Smida, A.; Hassen, M.; Ezzaouia, H.

2016-01-01

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E_o), dispersion energy (E_d), and static refractive index (n_o) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ_e) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

The R&D of HTGR high temperature helium sampling loop: From HTR-10 to HTR-PM

Energy Technology Data Exchange (ETDEWEB)

Fang, Chao, E-mail: fangchao@tsinghua.edu.cn [Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing 100084 (China); The Key Laboratory of Advanced Reactor Engineering and Safety of Ministry of Education, Beijing 100084 (China); Bao, Xuyin; Yang, Chen; Yang, Yanran; Cao, Jianzhu [Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing 100084 (China); The Key Laboratory of Advanced Reactor Engineering and Safety of Ministry of Education, Beijing 100084 (China)

2016-09-15

A High Temperature Helium Sampling Loop (HTHSL) for studying the transportation (deposition) behavior and total amount of solid fission products in high-temperature helium coming from the steam generator (SG) in the 10 MW High Temperature Gas-cooled Test Reactor (HTR-10) and High Temperature Reactor-Pebble bed Modules (HTR-PM) are researched and designed, respectively. Through the optimal design and simulation based on thermohydraulics analysis, the three-sleeve structure of deposition sampling device (DSD) could realize full-length temperature control evenly so that it could be used to study fission products in the primary circuit of HTR-10. On the other hand, an improved DSD is also designed for HTR-PM based on corresponding simulations, which could be used to sample the important nuclei in the high temperature helium from SG. These schemes offer two different methods to obtain the original source term in the high temperature helium, which will provide deeper understanding for the analysis of source terms of HTGR.

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

Science.gov (United States)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

Highly sensitive and selective room-temperature NO_2 gas sensor based on bilayer transferred chemical vapor deposited graphene

International Nuclear Information System (INIS)

Seekaew, Yotsarayuth; Phokharatkul, Ditsayut; Wisitsoraat, Anurat; Wongchoosuk, Chatchawal

2017-01-01

Highlights: • Simple and low-cost fabrication of bilayer graphene gas sensor was presented. • Layer effects of graphene on NO_2 gas-sensing properties were investigated. • Bilayer graphene sensor exhibited a high linear NO_2 sensitivity of 1.409 ppm"−"1. • The NO_2-sensing mechanisms based on band diagram were highlighted. - Abstract: This work presents a highly sensitive room-temperature gas sensor based on bilayer graphene fabricated by an interfacial transfer of chemical vapor deposited graphene onto nickel interdigitated electrodes. Scanning electron microscopic and Raman spectroscopic characterizations confirm the presence of graphene on interdigitated nickel electrodes with varying numbers of graphene layers. The NO_2 detection performances of bilayer graphene gas sensor have been investigated in comparison with those of monolayer and multilayer graphene gas sensors at room temperature. From results, the bilayer graphene gas sensor exhibits higher response, sensitivity and selectivity to NO_2 than monolayer and multilayer graphene. The sensitivity of bilayer graphene gas sensor is 1.409 ppm"−"1 towards NO_2 over a concentration range of 1–25 ppm, which is more than twice higher than that of monolayer graphene. The NO_2-sensing mechanism of graphene sensing film has been explained based on the direct charge transfer process due to the adsorption of NO_2 molecules.

Electrospray deposition of fullerenes in ultra-high vacuum: in situ scanning tunneling microscopy and photoemission spectroscopy

International Nuclear Information System (INIS)

Satterley, Christopher J; Perdigao, LuIs M A; Saywell, Alex; Magnano, Graziano; Rienzo, Anna; Mayor, Louise C; Dhanak, Vinod R; Beton, Peter H; O'Shea, James N

2007-01-01

Electrospray deposition of fullerenes on gold has been successfully observed by in situ room temperature scanning tunneling microscopy and photoemission spectroscopy. Step-edge decoration and hexagonal close-packed islands with a periodicity of 1 nm are observed at low and multilayer coverages respectively, in agreement with thermal evaporation studies. Photoemission spectroscopy shows that fullerenes are being deposited in high purity and are coupling to the gold surface as for thermal evaporation. These results open a new route for the deposition of thermally labile molecules under ultra-high vacuum conditions for a range of high resolution surface science techniques

The MWCNTs-Rh Nanocomposite Obtained By The New High-Temperature Method

Directory of Open Access Journals (Sweden)

Dobrzańska-Danikiewicz A.D.

2015-06-01

Full Text Available A nanocomposite was fabricated during the research undertaken, consisting of multiwalled carbon nanotubes coated with rhodium nanoparticles by the new high-temperature method being the subject of the patent claim. High quality multiwalled carbon nanotubes (MWCNTs with the length of 100÷500 nm and the diameter of 8÷20 nm obtained in advance with Catalytic Chemical Vapour Deposition (CVD were employed in the investigations. The nanotubes manufactured under the own research contain small amounts of metallic impurities and amorphous carbon deposits. Multiwalled carbon nanotubes functionalisation in acids was applied to deposit rhodium nanoparticles onto the surface of carbon nanotubes, and then the material was placed in a solution being a precursor of rhodium nanoparticles. The material prepared was next placed in a quartz vessel and subjected to high-temperature reduction in the atmosphere of argon to deposit rhodium nanoparticles onto the surface of multiwalled carbon nanotubes. The following examinations were performed, respectively: MWCNTs fabrication, fabrication of a CNT-NPs (Carbon NanoTube-NanoParticles nanocomposite material; the characterisation of the materials produced including examination of the structure and morphology, and the assessment of rhodium nanoparticles distribution on the surface of carbon nanotubes. Micro- and spectroscopy techniques were employed to characterise the structure of the nanocomposites obtained.

High voltage holding in the negative ion sources with cesium deposition

Energy Technology Data Exchange (ETDEWEB)

Belchenko, Yu.; Abdrashitov, G.; Ivanov, A.; Sanin, A.; Sotnikov, O., E-mail: O.Z.Sotnikov@inp.nsk.su [Budker Institute of Nuclear Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

2016-02-15

High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

Molecular dynamics study of the effect of substrate temperature and Ar ion assisted deposition on the deposition of amorphous TiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chen, Xian, E-mail: mus_c@qq.com [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhang, Jing [Science and Technology on Analog Integrated Circuit Laboratory, ChongQing, 401332 (China); Zhao, Yu-Qing [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’AN, 710049 (China)

2017-05-15

Highlights: • The surface roughness of a-TiO{sub 2} films is decreased with the increment of the Ar ion assisted energy. • The surface roughness of a-TiO{sub 2} films is decreased with higher substrate temperature when the substrate has an island structure. • The assisted Ar ion has power of making a flat surface and increasing the local temperature. • The assisted Ar ion will influence the growth mode with the change of surface atom mobility. • The Volmer-Weber (island) growth mode is inhibited with a high assisted Ar ion energy. - Abstract: This paper has investigated the impact of the substrate temperature and Ar ion assisted deposition on the surface structure formation mechanism and the film properties during the amorphous TiO{sub 2} thin film deposition process with the molecular dynamics simulation method. The results show that the reduction of the surface roughness happen when the energy of Ar ions assisted is increased or the substrate temperature rises, and also the film density on surface is changed with the increasing of Ar ions energy and substrate temperature. It is also found that the Volmer-Weber (island) growth mode of films is promoted by the lower Ar ion energy and higher substrate temperature when the substrate has an island structure. The assisted Ar ion has power of making a flat surface and increasing the local temperature. Besides, it will influence the growth mode with the change of surface atom mobility. With a high assisted Ar ion energy the Volmer-Weber (island) growth mode is inhibited, which will be conducive to the formation of more smooth film surface.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Energy Technology Data Exchange (ETDEWEB)

Lakshmanan, Saravanan; Rao, Subha Krishna [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Muthuvel, Manivel Raja [Defence Metallurgical Research Laboratory (DMRL), Hyderabad 500058 (India); Chandrasekaran, Gopalakrishnan [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India); Therese, Helen Annal, E-mail: helen.a@ktr.srmuniv.ac.in [Nanotechnology Research Centre, SRM University, Kattankulathur, Chennai 603203 (India)

2017-08-01

Highlights: • Ta/CoFeB(50 nm)/Ta thin films were deposited at various substrate temperatures (T{sub s}). • CoFeB films deposited at T{sub s} such as RT, 450 °C, 475 °C and 500 °C exhibited perpendicular coercivity. • CoFeB deposited at 475 °C displayed a higher coercivity of 315 Oe and a low M{sub s} of 169 emu/cc. • The enhanced crystallization of CoFeB at the Ta/CoFeB interface results in higher H{sub c} (⟂). - Abstract: Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (T{sub s}) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (M{sub s}) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Development of high-temperature superconducting coated conductor by MOCVD method

International Nuclear Information System (INIS)

Kim, Chan Joong; Jun, Byung Hyuk; Jung, Choung Hwan

2004-07-01

To fabricate the second generation superconductor wire, coated conductor, we selected MOCVD (Metal organic chemical vapor deposition) method which is commercially available and whose growth rate is very high. The first buffer layer CeO 2 was successfully deposited on the Ni tape. The thick Y-stabilized ZrO 2 layer was thus inserted between two CeO 2 layers by MOCVD method. The c-axis growth of the first CeO 2 , the inserted YSZ and top CeO 2 layer was achieved by optimized the deposition condition for the three buffers. It was found that the YBCO deposition was fairly dependant on the depostion temperature, time, oxygen partial pressure, amount of the source supplied. Especially the thickness of the YBCO films was linearly dedendant on the deposition temperature and time, but current properties was not linearly dependant on the film thickness. The critical current (Ic) of the YBCO film grown on SrTiO 3 and IBAD template were over 100 A/cm-width and 50 A/cm-width at 77 K and 0 field. To establish the MOCVD process, collaboration work with several organizations was made

Room-temperature-deposited dielectrics and superconductors for integrated photonics.

Science.gov (United States)

Shainline, Jeffrey M; Buckley, Sonia M; Nader, Nima; Gentry, Cale M; Cossel, Kevin C; Cleary, Justin W; Popović, Miloš; Newbury, Nathan R; Nam, Sae Woo; Mirin, Richard P

2017-05-01

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating low cost and high scalability. We have shown low-loss SiN waveguides, high-Q ring resonators, critically coupled ring resonators, 50/50 beam splitters, Mach-Zehnder interferometers (MZIs) and a process-agnostic fiber packaging scheme. We have further explored the utility of this process for applications in nonlinear optics and quantum photonics. We demonstrate spectral tailoring and octave-spanning supercontinuum generation as well as the integration of superconducting nanowire single photon detectors with MZIs and channel-dropping filters. The packaging approach is suitable for operation up to 160 °C as well as below 1 K. The process is well suited for augmentation of existing foundry capabilities or as a stand-alone process.

Structural properties of WO{sub 3} dependent of the annealing temperature deposited by hot-filament metal oxide deposition

Energy Technology Data Exchange (ETDEWEB)

Flores M, J. E. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica, Av. San Claudio y 18 Sur, Ciudad Universitaria, Col. Jardines de San Manuel, 72570 Puebla (Mexico); Diaz R, J. [IPN, Centro de Investigacion en Biotecnologia Aplicada, Ex-Hacienda de San Molino Km 1.5 Tepetitla, 90700 Tlaxcala (Mexico); Balderas L, J. A., E-mail: eflores@ece.buap.mx [IPN, Unidad Profesional Interdisciplinaria de Biotecnologia, Av. Acueducto s/n, Col. Barrio la Laguna, 07340 Mexico D. F. (Mexico)

2012-07-01

In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO{sub 3} that has been grown by hot-filament metal oxide deposition. The chemical stoichiometry was determined by X-ray photoelectron spectroscopy. By X-ray diffraction obtained that the as-deposited WO{sub 3} films present mainly monoclinic crystalline phase. WO{sub 3} optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO{sub 3} from 100 to 500 C. The Raman spectrum of the as-deposited WO{sub 3} film shows four intense peaks that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching ({upsilon}) and W-O bending ({delta}) modes, respectively, which enhanced and increased their intensity with the annealing temperature. (Author)

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Low-Temperature Deposition of Layered SnSe2 for Heterojunction Diodes

KAUST Repository

Serna, Martha I.

2018-04-27

Tin diselenide (SnSe) has been recently investigated as an alternative layered metal dichalcogenide due to its unique electrical and optoelectronics properties. Although there are several reports on the deposition of layered crystalline SnSe films by chemical and physical methods, synthesis methods like pulsed laser deposition (PLD) are not reported. An attractive feature of PLD is that it can be used to grow 2D films over large areas. In this report, a deposition process to grow stoichiometric SnSe on different substrates such as single crystals (Sapphire) and amorphous oxides (SiO and HfO) is reported. A detailed process flow for the growth of 2D SnSe at temperatures of 300 °C is presented, which is substantially lower than temperatures used in chemical vapor deposition and molecular beam epitaxy. The 2D SnSe films exhibit a mobility of ≈4.0 cm V s, and are successfully used to demonstrate SnSe/p-Si heterojunction diodes. The diodes show I /I ratios of 10-10 with a turn on voltage of <0.5 V, and ideality factors of 1.2-1.4, depending on the SnSe film growth conditions.

Nanoparticle manipulation in the near-substrate areas of low-temperature, high-density rf plasmas

International Nuclear Information System (INIS)

Rutkevych, P.P.; Ostrikov, K.; Xu, S.

2005-01-01

Manipulation of a single nanoparticle in the near-substrate areas of high-density plasmas of low-temperature glow discharges is studied. It is shown that the nanoparticles can be efficiently manipulated by the thermophoretic force controlled by external heating of the substrate stage. Particle deposition onto or repulsion from nanostructured carbon surfaces critically depends on the values of the neutral gas temperature gradient in the near-substrate areas, which is directly measured in situ in different heating regimes by originally developed temperature gradient probe. The measured values of the near-surface temperature gradient are used in the numerical model of nanoparticle dynamics in a variable-length presheath. Specific conditions enabling the nanoparticle to overcome the repulsive potential and deposit on the substrate during the discharge operation are investigated. The results are relevant to fabrication of various nanostructured films employing structural incorporation of the plasma-grown nanoparticles, in particular, to nanoparticle deposition in the plasma-enhanced chemical-vapor deposition of carbon nanostructures in hydrocarbon-based plasmas

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

Energy Technology Data Exchange (ETDEWEB)

Laatar, F., E-mail: fakher8laatar@gmail.com [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Harizi, A. [Photovoltaic and Semiconductor Materials Laboratory, Engineering Industrial Department, ENIT, Tunis El Manar University, BP 37, Le Belvédère, 1002 Tunis (Tunisia); Smida, A. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-06-15

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E{sub o}), dispersion energy (E{sub d}), and static refractive index (n{sub o}) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ{sub e}) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Bath temperature effect on magnetoelectric performance of Ni-lead zirconate titanate-Ni laminated composites synthesized by electroless deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, W. [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Wang, Y.G., E-mail: yingang.wang@nuaa.edu.c [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Bi, K. [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2011-03-15

Magnetoelectric (ME) Ni-lead zirconate titanate-Ni laminated composites have been prepared by electroless deposition at various bath temperatures. The structure of the Ni layers deposited at various bath temperatures was characterized by X-ray diffraction, and microstructures were investigated by transmission electron microscopy. The magnetostrictive coefficients were measured by means of a resistance strain gauge. The transverse ME voltage coefficient {alpha}{sub E,31} was measured with the magnetic field applied parallel to the sample plane. The deposition rate of Ni increases with bath temperature. Ni layer with smaller grain size is obtained at higher bath temperature and shows higher piezomagnetic coefficient, promoting the ME effect of corresponding laminated composites. It is advantageous to increase the bath temperature, while trying to avoid the breaking of bath constituents. - Research Highlights: Laminated composites without interlayer are prepared by electroless deposition. Bath temperature affects the grain size of the deposited Ni layers. Higher bath temperature is beneficial to obtain stronger ME response.

Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

2011-08-31

The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

Porous nuclear fuel element with internal skeleton for high-temperature gas-cooled nuclear reactors

Science.gov (United States)

Youchison, Dennis L.; Williams, Brian E.; Benander, Robert E.

2013-09-03

Porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's), and to processes for fabricating them. Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, the nuclear fuel may be deposited inside of a highly porous skeletal structure made of, for example, reticulated vitreous carbon foam.

Transparent, high mobility InGaZnO thin films deposited by PLD

International Nuclear Information System (INIS)

Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

2008-01-01

Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

Enthalpy and high temperature relaxation kinetics of stable vapor-deposited glasses of toluene

International Nuclear Information System (INIS)

Bhattacharya, Deepanjan; Sadtchenko, Vlad

2014-01-01

Stable non-crystalline toluene films of micrometer and nanometer thicknesses were grown by vapor deposition at distinct rates and probed by fast scanning calorimetry. Fast scanning calorimetry is shown to be extremely sensitive to the structure of the vapor-deposited phase and was used to characterize simultaneously its kinetic stability and its thermodynamic properties. According to our analysis, transformation of vapor-deposited samples of toluene during heating with rates in excess 10 5 K s −1 follows the zero-order kinetics. The transformation rate correlates strongly with the initial enthalpy of the sample, which increases with the deposition rate according to sub-linear law. Analysis of the transformation kinetics of vapor-deposited toluene films of various thicknesses reveal a sudden increase in the transformation rate for films thinner than 250 nm. The change in kinetics seems to correlate with the surface roughness scale of the substrate. The implications of these findings for the formation mechanism and structure of vapor-deposited stable glasses are discussed

The behavior of ZrO{sub 2}/20%Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} coatings deposited on aluminum alloys at high temperature regime

Energy Technology Data Exchange (ETDEWEB)

Pintilei, G.L., E-mail: laura_rares082008@yahoo.com [Pitesti University, Faculty of Mechanics and Technology, Str. Targu din Vale nr.1, 110040 Pitesti, Arges (Romania); Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania); Crismaru, V.I. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania); Abrudeanu, M. [Pitesti University, Faculty of Mechanics and Technology, Str. Targu din Vale nr.1, 110040 Pitesti, Arges (Romania); Munteanu, C. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania); Baciu, E.R. [University of Medicine and Pharmacy “Gr.T.Popa”, Department Implantology, Removable Restorations, Technology, Str. Universitatii nr. 16, 700115 Iasi (Romania); Istrate, B.; Basescu, N. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania)

2015-10-15

Highlights: • In both the ZrO{sub 2}/20%Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} coatings the high temperature caused a decrease of pores volume and a lower thickness of the interface between successive splats. • The NiCr bond layer in the sample with a ZrO{sub 2}/20%Y{sub 2}O{sub 3} suffered a fragmentation due to high temperature exposure and thermal expansion which can lead to coating exfoliation. • The NiCr bond layer in the sample with an Al{sub 2}O{sub 3} coating showed an increase of pore volume due to high temperature. - Abstract: Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO{sub 2}/20%Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3}. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

International Nuclear Information System (INIS)

Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

2002-01-01

We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

A concept of wireless and passive very-high temperature sensor

Science.gov (United States)

Nicolay, P.; Matloub, R.; Bardong, J.; Mazzalai, A.; Muralt, P.

2017-05-01

There is a need for sensors capable operating at temperatures above 1000 °C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The cold junction of the thermocouple is electrically connected to a highly piezoelectric thin layer, deposited on top of a SAW substrate. In operation, the voltage generated by the temperature gradient between the hot (>1000 °C) and cold junction (PZT), which could increase the sensitivity by factors of 3 and 20, as estimated from their transverse piezoelectric coefficients. As a first step in this direction, thin PZT layers have been deposited on Y-Z LN.

Temperature buffer test. Installation of buffer, heaters and instruments in the deposition hole

Energy Technology Data Exchange (ETDEWEB)

Johannesson, Lars-Erik; Sanden, Torbjoern; Aakesson, Mattias [Clay Technology AB, Lund (Sweden); Barcena, Ignacio; Garcia-Sineriz, Jose Luis [Aitemin, Madrid (Spain)

2010-12-15

During 2003 the Temperature Buffer Test was installed in Aespoe Hard Rock Laboratory. Temperature, water pressure, relative humidity, total pressure and displacements etc. are measured in numerous points in the test. Most of the cables from the transducers are led in the deposition hole through slots in the rock surface of the deposition hole in watertight tubes to the data collection system in a container placed in the tunnel close to the deposition hole. This report describes the work with the installations of the buffer, heaters, and instruments and yields a description of the final location of all instruments. The report also contains a description of the materials that were installed and the densities yielded after placement.

Temperature buffer test. Installation of buffer, heaters and instruments in the deposition hole

International Nuclear Information System (INIS)

Johannesson, Lars-Erik; Sanden, Torbjoern; Aakesson, Mattias; Barcena, Ignacio; Garcia-Sineriz, Jose Luis

2010-12-01

During 2003 the Temperature Buffer Test was installed in Aespoe Hard Rock Laboratory. Temperature, water pressure, relative humidity, total pressure and displacements etc. are measured in numerous points in the test. Most of the cables from the transducers are led in the deposition hole through slots in the rock surface of the deposition hole in watertight tubes to the data collection system in a container placed in the tunnel close to the deposition hole. This report describes the work with the installations of the buffer, heaters, and instruments and yields a description of the final location of all instruments. The report also contains a description of the materials that were installed and the densities yielded after placement

Growth and characterization of V{sub 2}O{sub 5} nanorods deposited by spray pyrolysis at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Abd-Alghafour, N. M., E-mail: na2013bil@gmail.com; Ahmed, Naser M., E-mail: nas-tiji@yahoo.com; Hassan, Zai. [Iraqi Ministry of Education, Anbar-Iraq (Iraq); Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, university sains Malaysia, 11800 Penang (Malaysia); Bououdina, M. [Nanotechnology Centre, University of Bahrain, PO Box 32038, Kingdom of Bahrain Department of Physics, College of Science, University of Bahrain, PO Box 32038, Kingdom of Bahrain, Iraqi Ministry of Education (Bahrain)

2016-07-06

Vanadium pentoxide (V{sub 2}O{sub 5}) nanorods were deposited by spray pyrolysis on preheated glass substrates at low temperatures. The influence of substrate temperature on the crystallization of V{sub 2}O{sub 5} has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at T{sub sub} = 300°C were orthorhombic structures with preferential along (001) direction. Formation of nanorods from substrate surface which led to the formation of films with small-sized and rod-shaped nanostructure is observed by field scanning electron microscopy. Optical transmittance in the visible range increases to reach a maximum value of about 80% for a substrate temperature of 350°C. PL spectra reveal one main broad peak centered around 540 nm with high intensity.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

DiMES Studies of Temperature Dependence of Carbon Erosion and Re-Deposition in the DIII-D Divertor

Energy Technology Data Exchange (ETDEWEB)

Rudakov, D L; Jacob, W; Krieger, K; Litnovsky, A; Philipps, V; West, W P; Wong, C C; Allen, S L; Bastasz, R J; Boedo, J A; Brooks, N H; Boivin, R L; De Temmerman, G; Fenstermacher, M E; Groth, M; Hollmann, E M; Lasnier, C J; McLean, A G; Moyer, R A; Stangeby, P C; Wampler, W R; Watkins, J G; Wienhold, P; Whaley, J

2007-03-15

A strong effect of a moderately elevated surface temperature on net carbon deposition and deuterium co-deposition in the DIII-D divertor was observed under detached conditions. A DiMES sample with a gap 2 mm wide and 18 mm deep was exposed to lower-single-null (LSN) L-mode plasmas first at room temperature, and then at 200 C. At the elevated temperature, deuterium co-deposition in the gap was reduced by an order of magnitude. At the plasma-facing surface of the heated sample net carbon erosion was measured at a rate of 3 nm/s, whereas without heating net deposition is normally observed under detachment. In a related experiment three sets of molybdenum mirrors recessed 2 cm below the divertor floor were exposed to identical LSN ELMy H-mode discharges. The first set of mirrors exposed at ambient temperature exhibited net carbon deposition at a rate of up to 3.7 nm/s and suffered a significant drop in reflectivity. In contrast, two other mirror sets exposed at elevated temperatures between 90 C and 175 C exhibited practically no carbon deposition.

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

EGFET pH Sensor Performance Dependence on Sputtered TiO2 Sensing Membrane Deposition Temperature

Directory of Open Access Journals (Sweden)

Khairul Aimi Yusof

2016-01-01

Full Text Available Titanium dioxide (TiO2 thin films were sputtered by radio frequency (RF magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V, hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

Evaluation of anti-scale property of CrN coatings at high temperature and high pressure

International Nuclear Information System (INIS)

Honda, Tomomi; Iwai, Yoshiro; Uno, Ryoji; Yoshinaga, Shigeki

2007-01-01

It is well known that oxide scale which adheres to the inner wall of the nozzle in nuclear power plant causes a serious problem. This study was carried out to obtain the knowledge about initiation and deposition behavior of oxide scale on the surface of SUS304 stainless steel and the evaluation of anti-scale property of chromium nitride (CrN) coatings at high temperature and high pressure. SUS304 stainless steel and CrN coating specimens were heated in water up to 200degC for more than 250 hours. Obtained results are summarized as follows. Initiation of the scale started from corrosive part of SUS304 stainless steel and the scale grows by deposition of magnetite particles. CrN coating can be applied to prevent the initiation and deposition of oxide scale. (author)

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

Numerical study on increasing mass flow ratio by energy deposition of high frequency pulsed laser

International Nuclear Information System (INIS)

Wang Diankai; Hong Yanji; Li Qian

2013-01-01

The mass flow ratio (MFR) of air breathing ramjet inlet would be decreased, when the Mach number is lower than the designed value. High frequency pulsed laser energy was deposited upstream of the cowl lip to reflect the stream so as to increase the MFR. When the Mach number of the flow was 5.0, and the static pressure and temperature of the flow were 2 551.6 Pa and 116.7 K, respectively, two-dimensional non-stationary compressible RANS equations were solved with upwind format to study the mechanisms of increasing MFR by high frequency pulsed laser energy deposition. The laser deposition frequency was 100 kHz and the average power was 500 W. The crossing point of the first forebody oblique shock and extension line of cowl lip was selected as the expected point. Then the deposition position was optimized by searching near the expected point. The results indicate that with the optimization of laser energy deposition position, the MFR would be increased from 63% to 97%. The potential value of increasing MFR by high frequency pulsed laser energy deposition was proved. The method for selection of the energy deposition position was also presented. (authors)

Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

International Nuclear Information System (INIS)

Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi

2004-01-01

We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10 4 , strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized

Highly sensitive and selective room-temperature NO{sub 2} gas sensor based on bilayer transferred chemical vapor deposited graphene

Energy Technology Data Exchange (ETDEWEB)

Seekaew, Yotsarayuth [Department of Physics, Faculty of Science, Kasetsart University, Chatuchak, Bangkok 10900 (Thailand); Phokharatkul, Ditsayut; Wisitsoraat, Anurat [Nanoelectronics and MEMS Laboratory, National Electronics and Computer Technology Center, Klong Luang, Pathumthani 12120 (Thailand); Wongchoosuk, Chatchawal, E-mail: chatchawal.w@ku.ac.th [Department of Physics, Faculty of Science, Kasetsart University, Chatuchak, Bangkok 10900 (Thailand)

2017-05-15

Highlights: • Simple and low-cost fabrication of bilayer graphene gas sensor was presented. • Layer effects of graphene on NO{sub 2} gas-sensing properties were investigated. • Bilayer graphene sensor exhibited a high linear NO{sub 2} sensitivity of 1.409 ppm{sup −1}. • The NO{sub 2}-sensing mechanisms based on band diagram were highlighted. - Abstract: This work presents a highly sensitive room-temperature gas sensor based on bilayer graphene fabricated by an interfacial transfer of chemical vapor deposited graphene onto nickel interdigitated electrodes. Scanning electron microscopic and Raman spectroscopic characterizations confirm the presence of graphene on interdigitated nickel electrodes with varying numbers of graphene layers. The NO{sub 2} detection performances of bilayer graphene gas sensor have been investigated in comparison with those of monolayer and multilayer graphene gas sensors at room temperature. From results, the bilayer graphene gas sensor exhibits higher response, sensitivity and selectivity to NO{sub 2} than monolayer and multilayer graphene. The sensitivity of bilayer graphene gas sensor is 1.409 ppm{sup −1} towards NO{sub 2} over a concentration range of 1–25 ppm, which is more than twice higher than that of monolayer graphene. The NO{sub 2}-sensing mechanism of graphene sensing film has been explained based on the direct charge transfer process due to the adsorption of NO{sub 2} molecules.

Low temperature (< 100 °C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

International Nuclear Information System (INIS)

Li, Flora M.; Waddingham, Rob; Milne, William I.; Flewitt, Andrew J.; Speakman, Stuart; Dutson, James; Wakeham, Steve; Thwaites, Mike

2011-01-01

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p–n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu 2 O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu 2 O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu 2 O films are reported. It is known from previously published work that the formation of pure Cu 2 O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu 2 O thin films (as opposed to CuO or mixed phase CuO/Cu 2 O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu 2 O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a

Mass trasnfer of corrosion products in high temperature, high pressure water circuits

International Nuclear Information System (INIS)

Evans, J.V.; Nicholson, F.D.

1976-07-01

The behaviour of iron oxide crud was studied at 25 0 C and over the range 240 to 270 0 C in a high pressure water loop. Crud deposition and removal was measured in two parallel, heated Zircaloy-2 tubes using iron-59 as a radioactive tracer. This proved to be a powerful technique capable of detecting crud deposits less than 3 nm thick. Rapid deposition of crud was observed following injection into the loop of an iron oxide suspension or a ferric nitrate solution. Crud deposited preferentially on heated surfaces when they were present but not to the exclusion of deposition elsewhere; hot spots on heated surfaces attracted additional deposits. Subcooled boiling appeared to be a more important factor than bulk boiling in the enhancement of crud deposition. The initial rapid deposition of the bulk crud throughout the loop was usually followed by a slower transfer of crud from other surfaces to any heated surface present. Unsteady operating conditions, e.g. a change in power, temperature or pH, frequently caused crud bursts, but once steady conditions were re-established the entrained crud was quickly redeposited. The bulk of deposited crud was not readily re-entrained, particularly from heated surfaces, so that crud bursts involved only a fraction of the total crud deposited. Ferric nitrate solutions injected into the loop formed haematite which deposited more slowly and formed more mobile deposits than magnetite which was injected directly into the loop as a slurry. Examination of deposits from both sources showed them to be even and tightly adherent, being removed only with difficulty. (author)

Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

Energy Technology Data Exchange (ETDEWEB)

Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho, E-mail: bhchoi@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-707 (Korea, Republic of)

2015-01-15

ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

Science.gov (United States)

Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

2018-05-01

Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

Science.gov (United States)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Mixed fuel strategy for carbon deposition mitigation in solid oxide fuel cells at intermediate temperatures.

Science.gov (United States)

Su, Chao; Chen, Yubo; Wang, Wei; Ran, Ran; Shao, Zongping; Diniz da Costa, João C; Liu, Shaomin

2014-06-17

In this study, we propose and experimentally verified that methane and formic acid mixed fuel can be employed to sustain solid oxide fuel cells (SOFCs) to deliver high power outputs at intermediate temperatures and simultaneously reduce the coke formation over the anode catalyst. In this SOFC system, methane itself was one part of the fuel, but it also played as the carrier gas to deliver the formic acid to reach the anode chamber. On the other hand, the products from the thermal decomposition of formic acid helped to reduce the carbon deposition from methane cracking. In order to clarify the reaction pathways for carbon formation and elimination occurring in the anode chamber during the SOFC operation, O2-TPO and SEM analysis were carried out together with the theoretical calculation. Electrochemical tests demonstrated that stable and high power output at an intermediate temperature range was well-maintained with a peak power density of 1061 mW cm(-2) at 750 °C. With the synergic functions provided by the mixed fuel, the SOFC was running for 3 days without any sign of cell performance decay. In sharp contrast, fuelled by pure methane and tested at similar conditions, the SOFC immediately failed after running for only 30 min due to significant carbon deposition. This work opens a new way for SOFC to conquer the annoying problem of carbon deposition just by properly selecting the fuel components to realize their synergic effects.

Structural properties of nitrogenated amorphous carbon films: Influence of deposition temperature and radiofrequency discharge power

International Nuclear Information System (INIS)

Lazar, G.; Bouchet-Fabre, B.; Zellama, K.; Clin, M.; Ballutaud, D.; Godet, C.

2008-01-01

The structural properties of nitrogenated amorphous carbon deposited by radiofrequency magnetron sputtering of graphite in pure N 2 plasma are investigated as a function of the substrate temperature and radiofrequency discharge power. The film composition is derived from x-ray photoemission spectroscopy, nuclear reaction analysis and elastic recoil detection measurements and the film microstructure is discussed using infrared, Raman, x-ray photoemission and near edge x-ray absorption fine structure spectroscopic results. At low deposition temperature and low radiofrequency power, the films are soft, porous, and easily contaminated with water vapor and other atmospheric components. The concentration of nitrogen in the films is very large for low deposition temperatures (∼33.6 at. % N at 150 deg. C) but decreases strongly when the synthesis temperature increases (∼15 at. % N at 450 deg. C). With increasing deposition temperature and discharge power values, the main observed effects in amorphous carbon nitride alloys are a loss of nitrogen atoms, a smaller hydrogen and oxygen contamination related to the film densification, an increased order of the aromatic sp 2 phase, and a strong change in the nitrogen distribution within the carbon matrix. Structural changes are well correlated with modifications of the optical and transport properties

Nanocrystalline soft ferromagnetic Ni-Co-P thin film on Al alloy by low temperature electroless deposition

International Nuclear Information System (INIS)

Aal, A. Abdel; Shaaban, A.; Hamid, Z. Abdel

2008-01-01

Soft ferromagnetic ternary Ni-Co-P films were deposited onto Al 6061 alloy from low temperature Ni-Co-P electroless plating bath. The effect of deposition parameters, such as time and pH, on the plating rate of the deposit were examined. The results showed that the plating rate is a function of pH bath and the highest coating thickness can be obtained at pH value from 8 to10. The surface morphology, phase structure and the magnetic properties of the prepared films have been investigated using scanning electron microscopy (SEM), X-ray diffraction analysis (XRD) and vibrating magnetometer device (VMD), respectively. The deposit obtained at optimum conditions showed compact and smooth with nodular grains structure and exhibited high magnetic moments and low coercivety. Potentiodynamic polarization corrosion tests were used to study the general corrosion behavior of Al alloys, Ni-P and Ni-Co-P coatings in 3.5% NaCl solution. It was found that Ni-Co-P coated alloy demonstrated higher corrosion resistance than Ni-P coating containing same percent of P due to the Co addition. The Ni-Co-P coating with a combination of high corrosion resistance, high hardness and excellent magnetic properties would be expected to enlarge the applications of the aluminum alloys

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Science.gov (United States)

Wu, Zijian; Cai, Jian; Wang, Junqiang; Geng, Zhiting; Wang, Qian

2018-02-01

Silver nanoparticles (Ag NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification layer. The bonding structure consisted of a Ti adhesive/barrier layer and a Cu substrate layer was fabricated on the silicon wafer. Ag NPs were deposited on the Cu surface by magnetron sputtering in a high-pressure environment and a loose structure with NPs was obtained. Shear tests were performed after bonding, and the influences of PVD pressure, bonding pressure, bonding temperature and annealing time on shear strength were assessed. Cu-Cu bonding with Ag NPs was accomplished at 200°C for 3 min under the pressure of 30 MPa without a post-annealing process, and the average bonding strength of 13.99 MPa was reached. According to cross-sectional observations, a void-free bonding interface with an Ag film thickness of around 20 nm was achieved. These results demonstrated that a reliable low-temperature short-time Cu-Cu bonding was realized by the sintering process of Ag NPs between the bonding pairs, which indicated that this bonding method could be a potential candidate for future ultra-fine pitch 3D integration.

Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

International Nuclear Information System (INIS)

Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

2012-01-01

thermal annealing of the high density, as-deposited a-C:H films. Furthermore, not only the density itself but also the variation of density with thermal annealing need to be elucidated in order to understand the dry etch properties of annealed a-C:H films. - Highlights: ► A-C:H(amorphous carbon) films are grown for using hard mask in dry etch process by plasma-enhanced chemical vapor deposition and annealed. ► Physical, chemical and mechanical properties of grown amorphous carbon films are changed by hydrogen and hydrocarbon contents, be determined by deposition and annealing temperature. ► Dry etch rate of a-C:H films is decreased and the film density increased through thermal annealing with high density, low hydrogen content, as-deposited film.

Response of temperature and density profiles to heat deposition profile and its impact on global scaling in LHD

International Nuclear Information System (INIS)

Yamada, H.; Murakami, S.; Yamazaki, K.

2002-01-01

Energy confinement and heat transport of net current-free NBI-heated plasmas in the Large Helical Device (LHD) are discussed with an emphasis on density dependence. Although the apparent density dependence of the energy confinement time has been demonstrated in a wide parameter range in LHD, the loss of this dependence has been observed in the high density regime under the specific condition. Broad heat deposition due to off-axis alignment and shallow penetration of neutral beams degrades the global energy confinement while the local heat transport maintains a clear temperature dependence lying between Bohm and gyro-Bohm characteristics. The central heat deposition inclines towards an intrinsic density dependence like τ E ∝(n-bar e /P) 0.6 from the saturated state. The broadening of the temperature profile due to the broad heat deposition profile contrasts with the invariant property which has observed widely as profile consistency and stiffness in tokamak experiments. (author)

Response of temperature and density profiles to heat deposition profile and its impact on global scaling in LHD

International Nuclear Information System (INIS)

Yamada, H.; Murakami, S.; Yamazaki, K.

2003-01-01

Energy confinement and heat transport of net current-free NBI-heated plasmas in the Large Helical Device (LHD) are discussed with an emphasis on density dependence. Although the apparent density dependence of the energy confinement time has been demonstrated in a wide parameter range in LHD, the loss of this dependence has been observed in the high density regime under the specific condition. Broad heat deposition due to off-axis alignment and shallow penetration of neutral beams degrades the global energy confinement while the local heat transport maintains a clear temperature dependence lying between Bohm and gyro-Bohm characteristics. The central heat deposition inclines towards an intrinsic density dependence like τ E ∝(n-bars e /P) 0.6 from the saturated state. The broadening of the temperature profile due to the broad heat deposition profile contrasts with the invariant property which has observed widely as profile consistency and stiffness in tokamak experiments. (author)

Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

2013-01-15

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

Effect of fuel type and deposition surface temperature on the growth and structure of ash deposit collected during co-firing of coal with sewage-sludge, saw-dust and refuse derived fuel

Energy Technology Data Exchange (ETDEWEB)

Kupka, Tomasz; Zajac, Krzysztof; Weber, Roman [Clausthal Univ. of Technology, Clausthal-Zellerfeld (Germany). Inst. of Energy Process Engineering and Fuel Technology

2008-07-01

Blends of a South African bituminous ''Middleburg'' coal and three alternative fuels (a municipal sewage-sludge, a saw-dust and a refuse derived fuel) have been fired in the slagging reactor to examine the effect of the added fuel on slagging propensity of the mixtures. Two kinds of deposition probes have been used, un-cooled ceramic probes and air-cooled steal probes. Distinct differences in physical and chemical structures of the deposits collected using the un-cooled ceramic probes and air-cooled metal probes have been observed. Glassy, easily molten deposits collected on un-cooled ceramic deposition probes were characteristic for co-firing of municipal sewage-sludge with coal. Porous, sintered (not molten) but easily removable deposits of the same fuel blend have been collected on the air-cooled metal deposition probes. Loose, easy removable deposits have been sampled on air-cooled metal deposition probe during co-firing of coal/saw-dust blends. The mass of the deposit sampled at lower surface temperatures (550-700 C) was always larger than the mass sampled at higher temperatures (1100-1300 C) since the higher temperature ash agglomerated and sintered much faster than the low temperature deposit. (orig.)

Study of graphene growth on copper foil by pulsed laser deposition at reduced temperature

Science.gov (United States)

Abd Elhamid, Abd Elhamid M.; Hafez, Mohamed A.; Aboulfotouh, Abdelnaser M.; Azzouz, Iftitan M.

2017-01-01

Graphene has been successfully grown on commercial copper foil at low temperature of 500 °C by pulsed laser deposition (PLD). X-ray diffraction patterns showed that films have been grown in the presence of Cu(111) and Cu(200) facets. Raman spectroscopy was utilized to study the effects of temperature, surface structure, and cooling rate on the graphene growth. Raman spectra indicate that the synthesis of graphene layers rely on the surface quality of the Cu substrate together with the proper cooling profile coupled with graphene growth temperature. PLD-grown graphene film on Cu has been verified by transmission electron microscopy. Surface mediated growth of graphene on Cu foil substrate revealed to have a favorable catalytic effect. High growth rate of graphene and less defects can be derived using fast cooling rate.

A highly crystalline single Au wire network as a high temperature transparent heater

Science.gov (United States)

Rao, K. D. M.; Kulkarni, Giridhar U.

2014-05-01

A transparent conductor which can generate high temperatures finds important applications in optoelectronics. In this article, a wire network made of Au on quartz is shown to serve as an effective high temperature transparent heater. The heater has been fabricated by depositing Au onto a cracked sacrificial template. The highly interconnected Au wire network thus formed exhibited a transmittance of ~87% in a wide spectral range with a sheet resistance of 5.4 Ω □-1. By passing current through the network, it could be joule heated to ~600 °C within a few seconds. The extraordinary thermal performance and stability owe much to the seamless junctions present in the wire network. Furthermore, the wire network gets self-annealed through joule heating as seen from its increased crystallinity. Interestingly, both transmittance and sheet resistance improved following annealing to 92% and 3.2 Ω □-1, respectively. A transparent conductor which can generate high temperatures finds important applications in optoelectronics. In this article, a wire network made of Au on quartz is shown to serve as an effective high temperature transparent heater. The heater has been fabricated by depositing Au onto a cracked sacrificial template. The highly interconnected Au wire network thus formed exhibited a transmittance of ~87% in a wide spectral range with a sheet resistance of 5.4 Ω □-1. By passing current through the network, it could be joule heated to ~600 °C within a few seconds. The extraordinary thermal performance and stability owe much to the seamless junctions present in the wire network. Furthermore, the wire network gets self-annealed through joule heating as seen from its increased crystallinity. Interestingly, both transmittance and sheet resistance improved following annealing to 92% and 3.2 Ω □-1, respectively. Electronic supplementary information (ESI) available: Optical micrographs, EDAX, XRD, SEM and TEM images of Au metal wires. See DOI: 10.1039/c4nr00869c

Some problems on materials tests in high temperature hydrogen base gas mixture

International Nuclear Information System (INIS)

Shikama, Tatsuo; Tanabe, Tatsuhiko; Fujitsuka, Masakazu; Yoshida, Heitaro; Watanabe, Ryoji

1980-01-01

Some problems have been examined on materials tests (creep rupture tests and corrosion tests) in high temperature mixture gas of hydrogen (80%H 2 + 15%CO + 5%CO 2 ) simulating the reducing gas for direct steel making. H 2 , CO, CO 2 and CH 4 in the reducing gas interact with each other at elevated temperature and produce water vapor (H 2 O) and carbon (soot). Carbon deposited on the walls of retorts and the water condensed at pipings of the lower temperature gas outlet causes blocking of gas flow. The gas reactions have been found to be catalyzed by the retort walls, and appropriate selection of the materials for retorts has been found to mitigate the problems caused by water condensation and carbon deposition. Quartz has been recognized to be one of the most promising materials for minimizing the gas reactions. And ceramic coating, namely, BN (born nitride) on the heat resistant superalloy, MO-RE II, has reduced the amounts of water vapor and deposited carbon (sooting) produced by gas reactions and has kept dew points of outlet gas below room temperature. The well known emf (thermo-electromotive force) deterioration of Alumel-Chromel thermocouples in the reducing gases at elevated temperatures has been also found to be prevented by the ceramic (BN) coating. (author)

Simulation of temperature-pressure profiles and wax deposition in gas-lift wells

Directory of Open Access Journals (Sweden)

Sevic Snezana

2017-01-01

Full Text Available Gas-lift is an artificial lift method in which gas is injected down the tubing- -casing annulus and enters the production tubing through the gas-lift valves to reduce the hydrostatic pressure of the formation fluid column. The gas changes pressure, temperature and fluid composition profiles throughout the production tubing string. Temperature and pressure drop along with the fluid composition changes throughout the tubing string can lead to wax, asphaltenes and inorganic salts deposition, increased emulsion stability and hydrate formation. This paper presents a new model that can sucesfully simulate temperature and pressure profiles and fluid composition changes in oil well that operates by means of gas-lift. This new model includes a pipe-in-pipe segment (production tubing inside production casing, countercurrent flow of gas-lift gas and producing fluid, heat exchange between gas-lift gas and the surrounding ambient – ground; and gas-lift gas with the fluid in the tubing. The model enables a better understanding of the multiphase fluid flow up the production tubing. Model was used to get insight into severity and locations of wax deposition. The obtained information on wax deposition can be used to plan the frequency and depth of wax removing operations. Model was developed using Aspen HYSYS software.

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Energy Technology Data Exchange (ETDEWEB)

Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

2015-08-31

This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

Science.gov (United States)

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

Directory of Open Access Journals (Sweden)

Marietta Seifert

2015-12-01

Full Text Available Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

DEFF Research Database (Denmark)

Sarkar, I.; Laux, M.; Demokritova, J.

2010-01-01

We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

International Nuclear Information System (INIS)

Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

2007-01-01

The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

Spatial atomic layer deposition: a route towards further industrialization of atomic layer deposition

NARCIS (Netherlands)

Poodt, P.; Cameron, D.C.; Dickey, E.; George, S.M.; Kuznetsov, Vladimir; Parsons, G.N.; Roozeboom, F.; Sundaram, G.; Vermeer, A.

2012-01-01

Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This; however, requires low-temperature processing and handling of flexible substrates. The authors investigate the process

Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

Energy Technology Data Exchange (ETDEWEB)

Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

2014-06-16

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

Dimer and String Formation during Low Temperature Silicon Deposition on Si(100)

DEFF Research Database (Denmark)

Smith, A. P.; Jonsson, Hannes

1996-01-01

We present theoretical results based on density functional theory and kinetic Monte Carlo simulations of silicon deposition and address observations made in recently reported low temperature scanning tunneling microscopy studies. A mechanism is presented which explains dimer formation on top...... of the substrate's dimer rows at 160 K and up to room temperature, while between-row dimers and longer strings of adatoms (''diluted dimer rows'') form at higher temperature. A crossover occurs at around room temperature between two different mechanisms for adatom diffusion in our model....

The role of strain rate during deposition of CAP on Ti6Al4V by superplastic deformation-like method using high-temperature compression test machine

International Nuclear Information System (INIS)

Ramdan, R.D.; Jauhari, I.; Hasan, R.; Masdek, N.R. Nik

2008-01-01

This paper describes an implementation of superplastic deformation method for the deposition of carbonated-apatite (CAP) on the well-know titanium alloy, Ti6Al4V. This deposition process was carried out using high-temperature compression test machine, at temperature of 775 deg. C, different strain rates, and conducted along the elastic region of the sample. Before the process, titanium substrate was cryogenically treated in order to approach superplastic characteristic during the process. After the process, thin film of CAP was created on the substrate with the thickness from 0.71 μm to 1.42 μm. The resulted film has a high density of CAP that covered completely the surface of the substrate. From the stress-strain relation chart, it can be observed that as the strain rate decreases, the area under stress-strain chart also decreases. This condition influences the density of CAP layer on the substrate that as this area decreases, the density of CAP layer also decreases as also confirmed by X-ray diffraction characterization. In addition, since the resulting layer of CAP is in the form of thin film, this layer did not alter the hardness of the substrate as measured by Vickers hardness test method. On the other hand, the resulting films also show a good bonding strength properties as the layer remain exist after friction test against polishing clothes for 1 h

Microstructure, optical characterization and light induced degradation in a-Si:H deposited at different temperatures

International Nuclear Information System (INIS)

Minani, E.; Sigcau, Z.; Adgebite, O.; Ramukosi, F.L.; Ntsoane, T.P.; Harindintwari, S.; Knoesen, D.; Comrie, C.M.; Britton, D.T.; Haerting, M.

2006-01-01

The microstructure and optical properties of a series of hydrogenated amorphous silicon layers deposited on glass substrates at different temperature have been characterized by means of X-ray diffraction techniques and optical spectroscopy. The radial distribution function of the as-deposited samples showed an increase in the bond angle and a decrease in the radial distance indicating a relaxation of the amorphous network with increasing the deposition temperature. Light induced degradation was studied using a simulated daylight spectrum. The changes in hydrogen bonding configuration, associated with the light soaking at different stages of illumination, was monitored via the transmission bands of the vibrational wag and stretch modes of the IR spectrum

Thermal plasma chemical vapor deposition

International Nuclear Information System (INIS)

Heberlein, J.; Pfender, E.

1993-01-01

Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

Hot nuclei: high temperatures, high angular momenta

International Nuclear Information System (INIS)

Guerreau, D.

1991-01-01

A review is made of the present status concerning the production of hot nuclei above 5 MeV temperature, concentrating mainly on the possible experimental evidences for the attainment of a critical temperature, on the existence of dynamical limitations to the energy deposition and on the experimental signatures for the formation of hot spinning nuclei. The data strongly suggest a nuclear disassembly in collisions involving very heavy ions at moderate incident velocities. Furthermore, hot nuclei seem to be quite stable against rotation on a short time scale. (author) 26 refs.; 12 figs

Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

Science.gov (United States)

Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

2018-06-01

The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fcc structure in the deposited Cu thin films was 〈1 1 1〉 oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the film-substrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition.

Heat Transfer in Metal Foam Heat Exchangers at High Temperature

Science.gov (United States)

Hafeez, Pakeeza

Heat transfer though open-cell metal foam is experimentally studied for heat exchanger and heat shield applications at high temperatures (˜750°C). Nickel foam sheets with pore densities of 10 and 40 pores per linear inch (PPI), have been used to make the heat exchangers and heat shields by using thermal spray coating to deposit an Inconel skin on a foam core. Heat transfer measurements were performed on a test rig capable of generating hot gas up to 1000°C. The heat exchangers were tested by exposing their outer surface to combustion gases at a temperature of 550°C and 750°C while being cooled by air flowing through them at room temperature at velocities up to 5 m/s. The temperature rise of the air, the surface temperature of the heat exchangers and the air temperature inside the heat exchanger were measured. The volumetric heat transfer coefficient and Nusselt number were calculated for different velocities. The heat transfer performance of the 40PPI sample brazed with the foil is found to be the most efficient. Pressure drop measurements were also performed for 10 and 40PPI metal foam. Thermographic measurements were done on 40PPI foam heat exchangers using a high temperature infrared camera. A high power electric heater was used to produce hot air at 300°C that passed over the foam heat exchanger while the cooling air was blown through it. Heat shields were made by depositing porous skins on metal foam and it was observed that a small amount of coolant leaking through the pores notably reduces the heat transfer from the hot gases. An analytical model was developed based assuming local thermal non-equilibrium that accounts for the temperature difference between solid and fluid phase. The experimental results are found to be in good agreement with the predicted values of the model.

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

Science.gov (United States)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

Temperature dependent structural, luminescent and XPS studies of CdO:Ga thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Moholkar, A.V.; Agawane, G.L.; Sim, Kyu-Ung; Kwon, Ye-bin; Choi, Doo Sun; Rajpure, K.Y.; Kim, J.H.

2010-01-01

Research highlights: → The CdO:Ga thin films seems an alternative to traditional TCO materials used in photovoltaic applications. This work deals the effect of deposition temperature on sprayed CdO:Ga films with respect to the structural, luminescent and XPS studies. → The crystalline quality of the GCO films improves with deposition temperature. → The oxygen vacancies are responsible for n-type conductivity and green emission. → The minimum resistivity, highest carrier concentration and mobility are 1.9 x 10 -4 Ω cm, 11.7 x 10 21 cm -3 and 27.64 cm 2 V -1 s -1 , respectively. - Abstract: The structural, compositional, photoluminescent and XPS properties of CdO:Ga thin films deposited at temperatures ranging from 275 to 350 o C, using spray pyrolysis are reported. X-ray diffraction characterization of as-deposited GCO thin films reveals that films are of cubic structure with a (2 0 0) preferred orientation. The crystalline quality of the GCO films improves and the grain size increases with deposition temperature. The EDS analyses confirm oxygen deficiency present in the film and are responsible for n-type conductivity. The photoluminescence spectra demonstrated that the green emission peaks of CdO thin films are centered at 482 nm. The relative intensity of these peaks is strongly dependent on the deposition temperature. Oxygen vacancies are dominant luminescent centers for green emission in CdO thin films. The XPS measurement shows the presence of Cd, Ga, O and C elements and confirms that CdO:Ga films are cadmium-rich.

Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

Science.gov (United States)

Avila-Avendano, Jesus; Quevedo-Lopez, Manuel; Young, Chadwin

2018-02-01

The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities at the surface and interface as a consequence of exposure to air. The I-V and C-V characteristics of the resulting junctions were obtained at different temperatures, ranging from room temperature to 150 °C, where the saturation current (from 10-8 to 10-4 A/cm2), ideality factor (between 1 and 2), series resistance (from 102 to 105 Ω), built-in potential (0.66-0.7 V), rectification factor (˜106), and carrier concentration (˜1016 cm-3) were obtained. The current-voltage temperature dependence study indicates that thermionic emission is the main transport mechanism at the CdTe/CdS interface. This study also demonstrated that the built-in potential (Vbi) calculated using a thermionic emission model is more accurate than that calculated using C-V extrapolation since C-V plots showed a Vbi shift as a function of frequency. Although CdTe/CdS is widely used for photovoltaic applications, the parameters evaluated in this work indicate that CdTe/CdS heterojunctions could be used as rectifying diodes and junction field effect transistors (JFETs). JFETs require a low PN diode saturation current, as demonstrated for the CdTe/CdS junction studied here.

Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

2015-03-15

Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

International Nuclear Information System (INIS)

Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

1990-01-01

Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

International Nuclear Information System (INIS)

Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

2016-01-01

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

Science.gov (United States)

Postiglione, William Michael

BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

Evolution of sputtered tungsten coatings at high temperature

Energy Technology Data Exchange (ETDEWEB)

Stelmakh, Veronika; Rinnerbauer, Veronika; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan; Senkevich, Jay J. [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Tucker, Charles; Ives, Thomas; Shrader, Ronney [Materion Corporation, Buellton, California 93427 (United States)

2013-11-15

Sputtered tungsten (W) coatings were investigated as potential high temperature nanophotonic material to replace bulk refractory metal substrates. Of particular interest are materials and coatings for thermophotovoltaic high-temperature energy conversion applications. For such applications, high reflectance of the substrate in the infrared wavelength range is critical in order to reduce losses due to waste heat. Therefore, the reflectance of the sputtered W coatings was characterized and compared at different temperatures. In addition, the microstructural evolution of sputtered W coatings (1 and 5 μm thick) was investigated as a function of anneal temperature from room temperature to 1000 °C. Using in situ x-ray diffraction analysis, the microstrain in the two samples was quantified, ranging from 0.33% to 0.18% for the 1 μm sample and 0.26% to 0.20% for the 5 μm sample, decreasing as the temperature increased. The grain growth could not be as clearly quantified due to the dominating presence of microstrain in both samples but was in the order of 20 to 80 nm for the 1 μm sample and 50 to 100 nm for the 5 μm sample, as deposited. Finally, the 5 μm thick layer was found to be rougher than the 1 μm thick layer, with a lower reflectance at all wavelengths. However, after annealing the 5 μm sample at 900 °C for 1 h, its reflectance exceeded that of the 1 μm sample and approached that of bulk W found in literature. Overall, the results of this study suggest that thick coatings are a promising alternative to bulk substrates as a low cost, easily integrated platform for nanostructured devices for high-temperature applications, if the problem of delamination at high temperature can be overcome.

Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

Energy Technology Data Exchange (ETDEWEB)

Liu, Yang, E-mail: yang.liu@helmholtz-berlin.de; Plate, Paul, E-mail: paul.plate@helmholtz-berlin.de; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Bartsch, Peter [Beuth Hochschule für Technik Berlin, Fachbereich VIII Maschinenbau, Veranstaltungstechnik, Verfahrenstechnik (Germany); Fiechter, Sebastian; Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Fischer, Christian-Herbert [Freie Universität Berlin, Institute of Chemistry and Biochemistry (Germany)

2017-04-15

Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

International Nuclear Information System (INIS)

Liu, Yang; Plate, Paul; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina; Bartsch, Peter; Fiechter, Sebastian; Lux-Steiner, Martha Ch.; Fischer, Christian-Herbert

2017-01-01

Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

High-rate deposition of photocatalytic TiO2 films by oxygen plasma assist reactive evaporation method

International Nuclear Information System (INIS)

Sakai, Tetsuya; Kuniyoshi, Yuji; Aoki, Wataru; Ezoe, Sho; Endo, Tatsuya; Hoshi, Yoichi

2008-01-01

High-rate deposition of titanium dioxide (TiO 2 ) film was attempted using oxygen plasma assisted reactive evaporation (OPARE) method. Photocatalytic properties of the film were investigated. During the deposition, the substrate temperature was fixed at 400 deg. C. The film deposition rate can be increased by increasing the supply of titanium atoms to the substrate, although oversupply of the titanium atoms causes oxygen deficiency in the films, which limits the deposition rate. The film structure depends strongly on the supply ratio of oxygen molecules to titanium atoms O 2 /Ti and changes from anatase to rutile structure as the O 2 /Ti supply ratio increased. Consequently, the maximum deposition rates of 77.0 nm min -1 and 145.0 nm min -1 were obtained, respectively, for the anatase and rutile film. Both films deposited at such high rates showed excellent hydrophilicity and organic decomposition performance. Even the film with rutile structure deposited at 145.0 nm min -1 had a contact angle of less than 2.5 deg. by UV irradiation for 5.0 h and an organics-decomposition performance index of 8.9 [μmol l -1 min -1 ] for methylene blue

Method of preparing high-temperature-stable thin-film resistors

Science.gov (United States)

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Method of preparing high-temperature-stable thin-film resistors

International Nuclear Information System (INIS)

Raymond, L.S.

1983-01-01

A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Directory of Open Access Journals (Sweden)

Jian Gao

2018-01-01

Full Text Available In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM ultraviolet photodetectors (UV PDs. The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magnitude; however, it also decreased the photo-current of the UV PD by one order of magnitude. The former could be related to the reduction of oxygen vacancies and the crystallization enhancement of the ZnO film; the latter should be attributed to the reduction of defects in the ZnO film, thus resulting in a smaller decrease in thermionic-field emission tunneling barrier because of reduced holes trapped near the interface. For the post-annealing at 250 oC for 30 min, the dark-current was equal to 5.16×10-11 A, and the ultraviolet-visible rejection ratio approached 1.4×106, and the responsivity was as high as 1.78×103 A/W at 5V. Further, prolonging annealing time at a lower temperature (200 oC also could greatly improve the performance of the UV PD, i.e., 90 min annealing produced a quite large responsivity of 1.30×104 A/W at 5 V while maintaining a very low dark-current (1.42×10-10 A and a large ultraviolet-visible rejection ratio (4.06×105.

Low temperature deposition: Properties of SiO{sub 2} films from TEOS and ozone by APCVD system

Energy Technology Data Exchange (ETDEWEB)

Juarez, H; Diaz, T; Rosendo, E; Garcia, G; Mora, F; Escalante, G [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur and Av. San Claudio, San Manuel 72000, Puebla (Mexico); Pacio, M; GarcIa, A, E-mail: hjuarez@cs.buap.m [Ingenieria Electrica, Secciaan Electranica del Estado Salido, Centro de Investigacian y de Estudios Avanzados del I. P. N., Av. Instituto Politecnico Nacional 2508, San Pedro Zacatenco, 07360 Mexico, D. F. (Mexico)

2009-05-01

An Atmospheric Pressure Chemical Vapor Deposition (APCVD) system was implemented for SiO{sub 2} nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O{sub 3}) were used and they were mixed into the APCVD system. The deposition temperatures were very low, from 125 to 250 {sup 0}C and the deposition time ranged from 1 to 15 minutes. The measured thicknesses from the deposited SiO{sub 2} films were between 5 and 300 nm. From the by Fourier-Transform Infrared (FTIR) spectra the typical absorption bands of the Si-O bond were observed and it was also observed a dependence on the vibrational modes corresponding to hydroxyl groups with the deposition temperature where the intensity of these vibrations can be related with the grade porosity grade of the films. Furthermore an analytical model has been evoked to determine the activation energy of the reactions in the surface and the gas phase in the deposit films process.

High-pressure turbine deposition in land-based gas turbines from various synfuels

Energy Technology Data Exchange (ETDEWEB)

Bons, J.P.; Crosby, J.; Wammack, J.E.; Bentley, B.I.; Fletcher, T.H. [Brigham Young University, Provo, UT (United States). Dept. of Mechanical Engineering

2007-01-15

Ash deposits from four candidate power turbine synfuels were studied in an accelerated deposition test facility. The facility matches the gas temperature and velocity of modern first-stage high-pressure turbine vanes. A natural gas combustor was seeded with finely ground fuel ash particulate from four different fuels: straw, sawdust, coal, and petroleum coke. The entrained ash particles were accelerated to a combustor exit flow Mach number of 0.31 before impinging on a thermal barrier coating (TBC) target coupon at 1150{sup o}C. Postexposure analyses included surface topography, scanning electron microscopy and x-ray spectroscopy. Due to significant differences in the chemical composition of the various fuel ash samples, deposit thickness and structure vary considerably for fuel. Biomass products (e.g., sawdust and straw) are significantly less prone to deposition than coal and petcoke for the same particle loading conditions. In a test simulating one turbine operating year at a moderate particulate loading of 0.02 parts per million by weight, deposit thickness from coal and petcoke ash exceeded 1 and 2 mm, respectively. These large deposits from coal and petcoke were found to detach readily from the turbine material with thermal cycling and handling. The smaller biomass deposit samples showed greater tenacity, in adhering to the TBC surface. In all cases, corrosive elements (e.g., Na, K, V, Cl, S) were found to penetrate the TBC layer during the accelerated deposition test. Implications for the power generation goal of fuel flexibility are discussed.

Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

Energy Technology Data Exchange (ETDEWEB)

Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

2016-08-01

Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

Transforming a Simple Commercial Glue into Highly Robust Superhydrophobic Surfaces via Aerosol-Assisted Chemical Vapor Deposition.

Science.gov (United States)

Zhuang, Aoyun; Liao, Ruijin; Lu, Yao; Dixon, Sebastian C; Jiamprasertboon, Arreerat; Chen, Faze; Sathasivam, Sanjayan; Parkin, Ivan P; Carmalt, Claire J

2017-12-06

Robust superhydrophobic surfaces were synthesized as composites of the widely commercially available adhesives epoxy resin (EP) and polydimethylsiloxane (PDMS). The EP layer provided a strongly adhered micro/nanoscale structure on the substrates, while the PDMS was used as a post-treatment to lower the surface energy. In this study, the depositions of EP films were taken at a range of temperatures, deposition times, and substrates via aerosol-assisted chemical vapor deposition (AACVD). A novel dynamic deposition temperature approach was developed to create multiple-layered periodic micro/nanostructures that significantly improved the surface mechanical durability. Water droplet contact angles (CA) of 160° were observed with droplet sliding angles (SA) frequently UV testing (365 nm, 3.7 mW/cm 2 , 120 h) were carried out to exhibit the environmental stability of the films. Self-cleaning behavior was demonstrated in clearing the surfaces of various contaminating powders and aqueous dyes. This facile and flexible method for fabricating highly durable superhydrophobic polymer films points to a promising future for AACVD in their scalable and low-cost production.

Effect of a ZrO{sub 2} coating deposited by the sol–gel method on the resistance of FeCrAl alloy in high-temperature oxidation conditions

Energy Technology Data Exchange (ETDEWEB)

Chęcmanowski, Jacek Grzegorz, E-mail: jacek.checmanowski@pwr.wroc.pl [Wrocław University of Technology, Faculty of Chemistry, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Szczygieł, Bogdan, E-mail: bogdan.szczygiel@pwr.wroc.pl [Wrocław University of Technology, Faculty of Chemistry, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)

2013-05-15

One-, three- and five-layer protective ZrO{sub 2} coatings were deposited on a FeCrAl alloy base by the sol–gel method. A zirconium(IV) isopropoxide isopropanol complex was used as the zirconium precursor. It has been shown that zirconium in the amount of 0.3–0.5 wt.% improves the resistance of FeCrAl alloy in high-temperature oxidation conditions (in air at T = 1060 °C for t = 2400 h). Even a very low Zr content affects the morphology, porosity and composition of the forming scale (SEM, EDS). An analysis of the chemical composition of the material after oxidation indicated to-core Zr diffusion. The presence of zirconium prevents catastrophic corrosion of the FeCrAl alloy during oxidation. In the case of the alloy without the reactive element (Zr) this type of corrosion occurred after about 1800 h. The oxidation of the FeCrAl alloy covered with ZrO{sub 2} coatings proceeds in three stages. In the first stage, lasting about 50 h, the mass of the sample grows rapidly, then for 700 h the mass changes minimally and in the third stage the oxidation proceeds according to a parabolic dependence. The presence of Zr on the surface of the FeCrAl alloy significantly contributes to the protective effect of the coatings. - Highlights: ► Multilayer ZrO{sub 2} coatings were deposited on FeCrAl alloy by sol–gel method. ► Study of alloy composition indicates to-core Zr diffusion in high temperature. ► Even very low content affects morphology and porosity of forming scale. ► Zirconium improves the resistance of FeCrAl alloy in high temperature conditions. ► Presence of ZrO{sub 2} prevents catastrophic corrosion of FeCrAl alloy during oxidation.

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

International Nuclear Information System (INIS)

Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

2006-01-01

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

Region-specific sensitivity of anemophilous pollen deposition to temperature and precipitation.

Directory of Open Access Journals (Sweden)

Timme H Donders

Full Text Available Understanding relations between climate and pollen production is important for several societal and ecological challenges, importantly pollen forecasting for pollinosis treatment, forensic studies, global change biology, and high-resolution palaeoecological studies of past vegetation and climate fluctuations. For these purposes, we investigate the role of climate variables on annual-scale variations in pollen influx, test the regional consistency of observed patterns, and evaluate the potential to reconstruct high-frequency signals from sediment archives. A 43-year pollen-trap record from the Netherlands is used to investigate relations between annual pollen influx, climate variables (monthly and seasonal temperature and precipitation values, and the North Atlantic Oscillation climate index. Spearman rank correlation analysis shows that specifically in Alnus, Betula, Corylus, Fraxinus, Quercus and Plantago both temperature in the year prior to (T-1, as well as in the growing season (T, are highly significant factors (TApril rs between 0.30 [P<0.05[ and 0.58 [P<0.0001]; TJuli-1 rs between 0.32 [P<0.05[ and 0.56 [P<0.0001] in the annual pollen influx of wind-pollinated plants. Total annual pollen prediction models based on multiple climate variables yield R2 between 0.38 and 0.62 (P<0.0001. The effect of precipitation is minimal. A second trapping station in the SE Netherlands, shows consistent trends and annual variability, suggesting the climate factors are regionally relevant. Summer temperature is thought to influence the formation of reproductive structures, while temperature during the flowering season influences pollen release. This study provides a first predictive model for seasonal pollen forecasting, and also aides forensic studies. Furthermore, variations in pollen accumulation rates from a sub-fossil peat deposit are comparable with the pollen trap data. This suggests that high frequency variability pollen records from natural

Thick-Film and LTCC Passive Components for High-Temperature Electronics

Directory of Open Access Journals (Sweden)

A. Dziedzic

2013-04-01

Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

Aspects of high temperature corrosion of boiler tubes

Energy Technology Data Exchange (ETDEWEB)

Spiegel, M.; Bendick, W. [Salzgitter-Mannesmann-Forschung GmbH, Duisburg (Germany)

2008-07-01

The development of new boiler steels for power generation has to consider significant creep strength as well as oxidation and corrosion resistance. High temperature corrosion of boiler materials concerns steam oxidation as well as fireside corrosion of parts, in contact with the flue gas. It will be shown that depending on the quality of the fuel, especially chlorine and sulphur are responsible for most of the fireside corrosion problems. Corrosion mechanisms will be presented for flue gas induced corrosion (HCl) and deposit induced corrosion (chlorides and sulfates). Especially for the 700 C technology, deposit induced corrosion issues have to be considered and the mechanisms of corrosion by molten sulfates 'Hot Corrosion' will be explained. Finally, an overview will be given on the selection of suitable materials in order to minimise corrosion relates failures. (orig.)

Effect of deposition temperature on the properties of nitrogen-doped AZO thin films grown on glass by rf reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Cho, Shinho, E-mail: scho@silla.ac.kr [Center for Green Fusion Technology and Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Heetae [Backlight Technology, LCD Division, Samsung Electronics Co., Ltd., Asan 336-841 (Korea, Republic of)

2010-09-15

Nitrogen-doped aluminum zinc oxide (NAZO) thin films were deposited on glass substrates at various deposition temperatures by rf reactive magnetron sputtering. The NAZO film deposited at 400 deg. C shows a strongly c-axis preferred orientation and n-type conduction with a resistivity of 2.1 x 10{sup -2} {Omega} cm, Hall mobility of 7.7 cm{sup 2} V{sup -1} s{sup -1}, and electron concentration of 3.8 x 10{sup 19} cm{sup -3}. The optimum crystallographic structure occurs at a deposition temperature of 400 deg. C, where a considerable crystallinity enhancement of the films is observed. The band gap energies of the NAZO films, obtained by using Tauc model and parabolic bands, are found to significantly depend on the deposition temperature, along with the band gap narrowing at higher deposition temperature due to renormalization effects.

High frequency and large deposition of acid fog on high elevation forest.

Science.gov (United States)

Igawa, Manabu; Matsumura, Ko; Okochi, Hiroshi

2002-01-01

We have collected and analyzed fogwater on the mountainside of Mt. Oyama (1252 m) in the Tanzawa Mountains of Japan and observed the fog event frequency from the base of the mountain with a video camera. The fog event frequency increased with elevation and was observed to be present 46% of the year at the summit. The water deposition via throughfall increased with elevation because of the increase in fogwater interception and was about twice that via rain at the summit, where the air pollutant deposition via throughfall was several times that via rainwater. The dry deposition and the deposition via fogwater were dominant factors in the total ion deposition at high elevation sites. In a fog event, nitric acid, the major acid component on the mountain, is formed during the transport of the air mass from the base of the mountain along the mountainside, where gases including nitric acid deposit and are scavenged by fogwater. Therefore, high acidity caused by nitric acid and relatively low ion strength are observed in the fogwater at high elevation sites.

Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

International Nuclear Information System (INIS)

Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

2005-01-01

Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

Advances in High Temperature Materials for Additive Manufacturing

Science.gov (United States)

Nordin, Nurul Amira Binti; Johar, Muhammad Akmal Bin; Ibrahim, Mohd Halim Irwan Bin; Marwah, Omar Mohd Faizan bin

2017-08-01

In today’s technology, additive manufacturing has evolved over the year that commonly known as 3D printing. Currently, additive manufacturing have been applied for many industries such as for automotive, aerospace, medical and other commercial product. The technologies are supported by materials for the manufacturing process to produce high quality product. Plus, additive manufacturing technologies has been growth from the lowest to moderate and high technology to fulfil manufacturing industries obligation. Initially from simple 3D printing such as fused deposition modelling (FDM), poly-jet, inkjet printing, to selective laser sintering (SLS), and electron beam melting (EBM). However, the high technology of additive manufacturing nowadays really needs high investment to carry out the process for fine products. There are three foremost type of material which is polymer, metal and ceramic used for additive manufacturing application, and mostly they were in the form of wire feedstock or powder. In circumstance, it is crucial to recognize the characteristics of each type of materials used in order to understand the behaviours of the materials on high temperature application via additive manufacturing. Therefore, this review aims to provide excessive inquiry and gather the necessary information for further research on additive material materials for high temperature application. This paper also proposed a new material based on powder glass, which comes from recycled tempered glass from automotive industry, having a huge potential to be applied for high temperature application. The technique proposed for additive manufacturing will minimize some cost of modelling with same quality of products compare to the others advanced technology used for high temperature application.

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

Science.gov (United States)

Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

2018-03-01

Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

NARCIS (Netherlands)

Macco, B.; Wu, Y.; Vanhemel, D.; Kessels, W.M.M.

2014-01-01

The preparation of high-quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown

Evolution of the microstructure in electrochemically deposited copper films at room temperature

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2007-01-01

The room temperature evolution of the microstructure in copper electrodeposits (self-annealing) was investigated by means of X-ray diffraction analysis and simultaneous measurement of the electrical resistivity as a function of time with an unprecedented time resolution. Independent of the copper...... the crystallographic texture changes by a multiple twinning mechanism. The kinetics of self-annealing is strongly affected by the thickness of the deposit. Storage of the copper films at sub-zero temperatures effectively hinders self-annealing and does not affect the kinetics of self-annealing upon reheating to room...... temperature....

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Science.gov (United States)

Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

2018-04-01

Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

Science.gov (United States)

1985-12-11

ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near

The influence of deposition temperature on vanadium dioxide thin films microstructure and physical properties

Directory of Open Access Journals (Sweden)

Velaphi Msomi

2010-10-01

Full Text Available Vanadium dioxide thin films were successfully prepared on soda lime glass substrates using the optimised conditions for r.f-inverted cylindrical magnetron sputtering. The optimised deposition parameters were fixed and then a systematic study of the effect of deposition temperature, ranging from 450 °C to 550 °C, on the microstructure of thermochromic thin films was carried out. The deposited films were found to be well crystallised, showing strong texture corresponding to the (011 plane, indicating the presence of vanadium dioxide.

Development of an ozone high sensitive sensor working at ambient temperature

International Nuclear Information System (INIS)

Berger, F; Ghaddab, B; Sanchez, J B; Mavon, C

2011-01-01

Hybrid SnO 2 /SWNTs thin layer were deposited by using sol-gel process. Such sensitive layers showed very high performances for O 3 flow detection at ambient temperature. Limit sensitivity, lower than 21,5 ppb of O 3 in air has been reached by using these hybrid layers. Compared to usefull metal oxide sensors, the main advantage of the use of such hybrid layers, is that these devices enable the detection of O 3 traces at room temperature. The influence of sensor's working temperature is discussed and finally a reactional mechanism for the detection of O 3 is proposed.

Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from CrSi2-Cr-SiC targets by S-gun magnetron

International Nuclear Information System (INIS)

Felmetsger, Valery V.

2010-01-01

Technological solutions for producing nanoscale cermet resistor films with sheet resistances above 1000 Ω/□ and low temperature coefficients of resistance (TCR) have been investigated. 2-40 nm thick cermet films were sputter deposited from CrSi 2 -Cr-SiC targets by a dual cathode dc S-gun magnetron. In addition to studying film resistance versus temperature, the nanofilm structural features and composition were analyzed using scanning electron microscopy, atomic force microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and electron energy loss spectroscopy. This study has revealed that all cermet resistor films deposited at ambient and elevated temperatures were amorphous. The atomic ratio of Si to Cr in these films was about 2 to 1. The film TCR displayed a significant increase when the deposited film thickness was reduced below 2.5 nm. An optimized sputter process consisting of wafer degassing, cermet film deposition at elevated temperature with rf substrate bias, and a double annealing in vacuum, consisting of in situ annealing following the film sputtering and an additional annealing following the exposure of the wafers to air, has been found to be very effective for the film thermal stabilization and for fine tuning the film TCR. Cermet films with thicknesses in the range of 2.5-4 nm deposited using this technique had sheet resistances ranging from 1800 to 1200 Ω/□ and TCR values from -50 ppm/ deg. C to near zero, respectively. A possible mechanism responsible for the high efficiency of annealing the cermet films in vacuum (after preliminary exposure to air), resulting in resistance stabilization and TCR reduction, is also discussed.

Room-temperature deposition of diamond-like carbon field emitter on flexible substrates

International Nuclear Information System (INIS)

Chen, H.; Iliev, M.N.; Liu, J.R.; Ma, K.B.; Chu, W.-K.; Badi, N.; Bensaoula, A.; Svedberg, E.B.

2006-01-01

Room-temperature fabrication of diamond-like carbon electron field emitters on flexible polyimide substrate is reported. These thin film field emitters are made using an Ar gas cluster ion beam assisted C 6 vapor deposition method. The bond structure of the as-deposited diamond-like carbon film was studied using Raman spectroscopy. The field emission characteristics of the deposited films were also measured. Electron current densities over 15 mA/cm 2 have been recorded under an electrical field of about 65 V/μm. These diamond-like carbon field emitters are easy and inexpensive to fabricate. The results are promising for flexible field-emission fabrication without the need of complex patterning and tip shaping as compared to the Spindt-type field emitters

The effect of increased temperature and nitrogen deposition on decomposition in bogs

NARCIS (Netherlands)

Breeuwer, A.J.G.; Heijmans, M.M.P.D.; Robroek, B.J.M.; Limpens, J.; Berendse, F.

2008-01-01

Despite their low primary production, ombrotrophic peatlands have a considerable potential to store atmospheric carbon as a result of their extremely low litter decomposition rates. Projected changes in temperature and nitrogen (N) deposition may increase decomposition rates by their positive

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

International Nuclear Information System (INIS)

Croci, S.; Pecheur, A.; Autran, J.L.; Vedda, A.; Caccavale, F.; Martini, M.; Spinolo, G.

2001-01-01

Silicon dioxide films have been deposited by plasma-enhanced chemical vapor deposition at low substrate temperature (50 deg. C) in a parallel-plate reactor using hexamethyldisilazane (HMDS), diluted in He, and O 2 as Si and O precursors. The effect of the O 2 /(HMDS+He) flow rate ratio on the oxide properties has been investigated in the range of 0.05-1.25 by means of deposition rate, wet etching rate, secondary ion mass spectrometry, thermally stimulated luminescence, and high frequency capacitance-voltage measurements. Both the deposition rate and the etching rate increase by increasing the O 2 /(HMDS+He) flow rate ratio and reach a constant value at flow rate ratios higher than 0.6. The strong increase and saturation in the deposition rate can be attributed to the impinging oxide atoms flux and to the consumption of silyl radicals at the deposition surface, respectively. The Si/SiO 2 interface state density and the positive fixed charge density are in the range 1x10 11 -1x10 12 eV -1 cm -2 and 6x10 11 -1.5x10 12 C cm -2 , respectively. These concentrations are comparable with literature data concerning SiO 2 films obtained by plasma enhanced chemical vapor deposition at temperatures higher than 200 deg. C using other Si precursors. Moreover, the interface state density decreases while the fixed oxide charge increases by increasing the O 2 /(HMDS+He) flow rate ratio. A correlation has been found between defects monitored by thermally stimulated luminescence and fixed oxide charges. From a comparison with secondary ion mass spectrometry results, the fixed oxide charges can be preliminarily attributed to intrinsic defects

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

International Nuclear Information System (INIS)

Araiza, J J; Sanchez, O

2009-01-01

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr 3 N 4 (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Perspective: Highly stable vapor-deposited glasses

Science.gov (United States)

Ediger, M. D.

2017-12-01

This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

Deposition of low stress, high transmittance SiC as an x-ray mask membrane using ECR plasma CVD

CERN Document Server

Lee, S Y; Lim, S T; Ahn, J H

1998-01-01

SiC for x-ray mask membrane is deposited by Electron Cyclotron Resonance plasma Chemical Vapor Deposition from SiH sub 4 /CH sub 4 Ar mixtures. Stoichiometric SiC is deposited at SiH sub 4 /CH sub 4 ratio of 0.4, deposition temperature of 600.deg.C and microwave power of 500 W with +- 5% thickness uniformity, As-deposited film has compressive residual stress, very smooth surface (31 A rms) and high optical transmittance of 90% at 633 nm wavelength. The microstructure of this film consists of the nanocrystalline particle (100 A approx 200A) embedded in amorphous matrix. Residual stress can be turned to tensile stress via Rapid Thermal Annealing in N sub 2 atmosphere, while suppressing structural change during annealing, As a result, smooth (37 A rms) SiC film with moderate tensile stress and high optical transmittance (85% at 633 nm wavelength) is obtained.

High-temperature superconductors induced by ion implantation. Final report

International Nuclear Information System (INIS)

Greenwald, A.C.; Johnson, E.

1988-08-01

High dose oxygen ion implantation (10 to the 17th power ions per sq. cm.) at elevated temperatures (300 C) has been shown to adjust the critical temperature of gamma-Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O materials. These results are in marked contrast to earlier work which showed complete destruction of superconducting properties for similar radiation doses, and marked reduction in superconducting properties at one-tenth this dose in the 1-2-3- compound only. Experiments also showed that the superconducting materials can be patterned into conducting and nonconducting areas without etching by ion implantation, allowing maintenance of planar geometries required for microcircuit fabrication. Experiments on deposition of thin films of high temperature superconductors for use with the ion implantation experiments showed that ion beam sputtering from a single target could achieve the correct stoichiometry. Variations of composition with ion beam energy and angle of sputtered ions were studied

Yttrium silicate as an oxidation protection layer for C/C-SiC materials. Synthesis, electrophoretic deposition and high temperature oxidation; Yttriumsilikat als Oxidationsschutzschicht fuer C/C-SiC-Werkstoffe. Synthese, elektrophoretische Abscheidung und Hochtemperaturoxidation

Energy Technology Data Exchange (ETDEWEB)

Grosse-Brauckmann, Jana

2012-07-01

Carbon fibre reinforced carbon composites are promising materials for high temperature applications. They exhibit excellent thermal shock resistance and nearly constant mechanical strength. A serious draw-back of this material is their poor resistivity towards oxidation at temperatures above 400 C. To make use of the very good thermal stability the material needs an outer oxidation protection coating. Silicon carbide has been successfully employed at temperatures up to 1300 C. To increase the application range towards higher temperatures an outer environmental barrier coating is needed. In the present work yttrium silicates were used to complement the silicon carbide coated carbon fibre reinforced carbon material. Both stable compounds in the quasi-binary system Y{sub 2}O{sub 3}-SiO{sub 2}, yttrium orthosilicate (Y{sub 2}SiO{sub 5}) and yttrium pyrosilicate (Y{sub 2}Si{sub 2}O{sub 7}), were separately applied to the test samples via electrophoretic deposition. Suitable suspensions were prepared in butanone with iodine as charging agent to adjust conductivity and particle charge. Galvanostatic deposition obeys a linear growth law for the selected deposition times. Alternatively the feasibility of direct electrophoretic deposition from an yttrium silicate precursor sol was tested. Emphasis was put on the development of a suitable sol-system based on alkoxide precursors. Samples coated either with Y{sub 2}SiO{sub 5} or Y{sub 2}Si{sub 2}O{sub 7} were investigated using thermogravimetric high temperature oxidation in the temperature range from 1450 C to 1650 C, respectively. The coated samples exhibited very good oxidation resistance up to temperatures of 1600 C, while the performance was reduced at 1650 C to a few hours. All samples showed a parabolic mass increase with time indicating a diffusion limited process governing the oxidation kinetics. The cross sections of the samples show a sharp border between the SiO{sub 2} that crystallizes to cristobalite and the

Preparation and Characterization of High Temperature Superconductor Film Surfaces

Science.gov (United States)

1993-10-27

Lanthanum Strontium Copper Oxide (LSCO) was also tested as a normal metal overlayer because of its compatibility with the high deposition temperature for...fabricate YBCO/ISCO SEB junctions using a variety of step heights (110 nm - 330 nm) on Neodymium Gallate (NGO) substrates. NGO was chosen as a...substrate because of its excellent lattice match to YBCO and its lack of crystal twinning Twinning had been a drawback of Lanthanum Aluminate (LAO)- L

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

Multilayer Porous Crucibles for the High Throughput Salt Separation from Uranium Deposits

International Nuclear Information System (INIS)

Kwon, S. W.; Park, K. M.; Kim, J. G.; Kim, I. T.; Seo, B. K.; Moon, J. G.

2013-01-01

Solid cathode processing is necessary to separate the salt from the cathode since the uranium deposit in a solid cathode contains electrolyte salt. A physical separation process, such as a distillation separation, is more attractive than a chemical or dissolution process because physical processes generate much less secondary process. Distillation process was employed for the cathode processsing due to the advantages of minimal generation of secondary waste, compact unit process, simple and low cost equipment. The basis for vacuum distillation separation is the difference in vapor pressures between salt and uranium. A solid cathode deposit is heated in a heating region and salt vaporizes, while nonvolatile uranium remains behind. It is very important to increase the throughput of the salt separation system owing to the high uranium content of spent nuclear fuel and high salt fraction of uranium dendrites. The evaporation rate of the LiCl-KCl eutectic salt in vacuum distiller is not so high to come up with the generation capacity of uranium dendrites in an electro-refiner. Therefore, a wide evaporation area or high distillation temperature is necessary for the successful salt separation. In this study, it was attempted to enlarge a throughput of the salt distiller with a multilayer porous crucibles for the separation of adhered salt in the uranium deposits generated from the electrorefiner. The feasibility of the porous crucibles was tested by the salt distillation experiments. In this study, the salt distiller with multilayer porous crucibles was proposed and the feasibility of liquid salt separation was examined to increase a throughput. It was found that the effective separation of salt from uranium deposits was possible by the multilayer porous crucibles

Multilayer Porous Crucibles for the High Throughput Salt Separation from Uranium Deposits

Energy Technology Data Exchange (ETDEWEB)

Kwon, S. W.; Park, K. M.; Kim, J. G.; Kim, I. T.; Seo, B. K.; Moon, J. G. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2013-05-15

Solid cathode processing is necessary to separate the salt from the cathode since the uranium deposit in a solid cathode contains electrolyte salt. A physical separation process, such as a distillation separation, is more attractive than a chemical or dissolution process because physical processes generate much less secondary process. Distillation process was employed for the cathode processsing due to the advantages of minimal generation of secondary waste, compact unit process, simple and low cost equipment. The basis for vacuum distillation separation is the difference in vapor pressures between salt and uranium. A solid cathode deposit is heated in a heating region and salt vaporizes, while nonvolatile uranium remains behind. It is very important to increase the throughput of the salt separation system owing to the high uranium content of spent nuclear fuel and high salt fraction of uranium dendrites. The evaporation rate of the LiCl-KCl eutectic salt in vacuum distiller is not so high to come up with the generation capacity of uranium dendrites in an electro-refiner. Therefore, a wide evaporation area or high distillation temperature is necessary for the successful salt separation. In this study, it was attempted to enlarge a throughput of the salt distiller with a multilayer porous crucibles for the separation of adhered salt in the uranium deposits generated from the electrorefiner. The feasibility of the porous crucibles was tested by the salt distillation experiments. In this study, the salt distiller with multilayer porous crucibles was proposed and the feasibility of liquid salt separation was examined to increase a throughput. It was found that the effective separation of salt from uranium deposits was possible by the multilayer porous crucibles.

CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt

This thesis concerns the deposition of thin films for solar cells using pulsed laser deposition (PLD) and pulsed electron deposition (PED). The aim was to deposit copper tin sulfide (CTS) and zinc sulfide (ZnS) by pulsed laser deposition to learn about these materials in relation to copper zinc tin...... time. We compared the results of CZTS deposition by PLD at DTU in Denmark to CZTS made by PED at IMEM-CNR, where CIGS solar cells have successfully been fabricated at very low processing temperatures. The main results of this work were as follows: Monoclinic-phase CTS films were made by pulsed laser...... deposition followed by high temperature annealing. The films were used to understand the double band gap that we and other groups observed in the material. The Cu-content of the CTS films varied depending on the laser fluence (the laser energy per pulse and per area). The material transfer from...

Application of a Coated Film Catalyst Layer Model to a High Temperature Polymer Electrolyte Membrane Fuel Cell with Low Catalyst Loading Produced by Reactive Spray Deposition Technology

Directory of Open Access Journals (Sweden)

Timothy D. Myles

2015-10-01

Full Text Available In this study, a semi-empirical model is presented that correlates to previously obtained experimental overpotential data for a high temperature polymer electrolyte membrane fuel cell (HT-PEMFC. The goal is to reinforce the understanding of the performance of the cell from a modeling perspective. The HT-PEMFC membrane electrode assemblies (MEAs were constructed utilizing an 85 wt. % phosphoric acid doped Advent TPS® membranes for the electrolyte and gas diffusion electrodes (GDEs manufactured by Reactive Spray Deposition Technology (RSDT. MEAs with varying ratios of PTFE binder to carbon support material (I/C ratio were manufactured and their performance at various operating temperatures was recorded. The semi-empirical model derivation was based on the coated film catalyst layer approach and was calibrated to the experimental data by a least squares method. The behavior of important physical parameters as a function of I/C ratio and operating temperature were explored.

Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan)

2015-06-07

The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of

High Temperature Corrosion in Biomass-Fired Boilers

DEFF Research Database (Denmark)

Henriksen, Niels; Montgomery, Melanie; Hede Larsen, Ole

2002-01-01

condense on superheater components. This gives rise to specific corrosion problems not previously encountered in coal-fired power plants. The type of corrosion attack can be directly ascribed to the composition of the deposit and the metal surface temperature. To avoid such high corrosion rates, woodchip...... has also been utilised as a fuel. Combustion of woodchip results in a smaller amount of ash, and potassium and chlorine are present in lesser amounts. However, significant corrosion rates were still seen. A case study of a woodchip fired boiler is described. The corrosion mechanisms in both straw-fired...... and woodchip fired boilers are discussed....

Thin film thermocouples for in situ membrane electrode assembly temperature measurements in a polybenzimidazole-based high temperature proton exchange membrane unit cell

DEFF Research Database (Denmark)

Ali, Syed Talat; Lebæk, Jesper; Nielsen, Lars Pleth

2010-01-01

m thick layer of TFTCs on 75 mu m thick Kapton foil. The Kapton foil was treated with in situ argon plasma etching to improve the adhesion between TFTCs and the Kapton substrate. The TFTCs were covered with a 7 mu m liquid Kapton layer using spin coating technique to protect them from environmental......This paper presents Type-T thin film thermocouples (TFTCs) fabricated on Kapton (polyimide) substrate for measuring the internal temperature of PBI(polybenzimidazole)-based high temperature proton exchange membrane fuel cell (HT-PEMFC). Magnetron sputtering technique was employed to deposit a 2 mu...... degradation. This Kapton foil with deposited TFTCs was used as sealing inside a PBI (polybenzimidazole)-based single cell test rig, which enabled measurements of in situ temperature variations of the working fuel cell MEA. The performance of the TFTCs was promising with minimal interference to the operation...

Modelling impacts of atmospheric deposition and temperature on long-term DOC trends.

Science.gov (United States)

Sawicka, K; Rowe, E C; Evans, C D; Monteith, D T; E I Vanguelova; Wade, A J; J M Clark

2017-02-01

It is increasingly recognised that widespread and substantial increases in Dissolved organic carbon (DOC) concentrations in remote surface, and soil, waters in recent decades are linked to declining acid deposition. Effects of rising pH and declining ionic strength on DOC solubility have been proposed as potential dominant mechanisms. However, since DOC in these systems is derived mainly from recently-fixed carbon, and since organic matter decomposition rates are considered sensitive to temperature, uncertainty persists over the extent to which other drivers that could influence DOC production. Such potential drivers include fertilisation by nitrogen (N) and global warming. We therefore ran the dynamic soil chemistry model MADOC for a range of UK soils, for which time series data are available, to consider the likely relative importance of decreased deposition of sulphate and chloride, accumulation of reactive N, and higher temperatures, on soil DOC production in different soils. Modelled patterns of DOC change generally agreed favourably with measurements collated over 10-20years, but differed markedly between sites. While the acidifying effect of sulphur deposition appeared to be the predominant control on the observed soil water DOC trends in all the soils considered other than a blanket peat, the model suggested that over the long term, the effects of nitrogen deposition on N-limited soils may have been sufficient to raise the "acid recovery DOC baseline" significantly. In contrast, reductions in non-marine chloride deposition and effects of long term warming appeared to have been relatively unimportant. The suggestion that future DOC concentrations might exceed preindustrial levels as a consequence of nitrogen pollution has important implications for drinking water catchment management and the setting and pursuit of appropriate restoration targets, but findings still require validation from reliable centennial-scale proxy records, such as those being developed

A novel fiber-optic temperature sensor based on high temperature-dependent optical properties of ZnO film on sapphire fiber-ending

International Nuclear Information System (INIS)

Cai Pinggen; Zhen Dong; Xu Xiaojun; Liu Yulin; Chen Naibo; Wei Gaorao; Sui Chenghua

2010-01-01

We report the growth of high-quality thin films of ZnO via an electron-beam evaporation technique. Studies of the transmittance spectra have revealed a sharp optical absorption edge and a significant redshift. After annealing at 673 K, the ZnO films again demonstrated a sharp absorption edge in a manner similar to the as-deposited samples. This illustrates the excellent thermal stability of the thin films and, as such, demonstrates their potential as fiber-optic temperature sensors. Utilizing the influence of optical absorption spectra at different temperatures, a novel fiber-optic temperature sensor based on this material has been designed and tested. This technique could offer a simple, robust and cost-effective method to be used in high temperature sensing applications.

Review of progress in pulsed laser deposition and using Nd:YAG laser in processing of high Tc superconductors

International Nuclear Information System (INIS)

Chen, C.W.; Mukherjee, K.

1993-01-01

The current progress in pulsed laser ablation of high-temperature superconductors is reviewed with emphasis on the effect of pulse-width and wavelength, nature of the plasma plume, post-annealing and methods to improve quality of films grown at low temperature. An ion beam assisted millisecond pulsed laser vapor deposition process has been developed to fabricate YBa 2 Cu 3 O x high T. superconductor thin films. Solution to target overheating problem, effects of oxygen ion beam, properties of deposited films, and effect of silver buffer layer on YSZ substrate are presented. A new laser calcining process has been used to produce near single phase high T c superconductors of Bi-Pb-Sr-Ca-Cu-0 system. The total processing time was reduced to about 100 hours which is about half of that for conventional sintering. For this compound both resistance and magnetic susceptibility data showed an onset of superconducting transition at about 110K. A sharp susceptibility drop was observed above 106K. The zero resistance temperature was about 98K. High T c phase was formed via a different kinetic path in laser calcined sample compare with the conventionally processed sample

Preparation of Platinum (Pt) Counter Electrode Coated by Electrochemical Technique at High Temperature for Dye-sensitized Solar Cell (DSSC) Application

Science.gov (United States)

Ponken, Tanachai; Tagsin, Kamonlapron; Suwannakhun, Chuleerat; Luecha, Jakkrit; Choawunklang, Wijit

2017-09-01

Pt counter electrode was coated by electrochemical method. Electrolyte solution was synthesized by platinum (IV) choloride (PtCl4) powder dissolved in hydrochloric acid solution. Pt films were deposited on the FTO substrate. Deposition time of 10, 30 and 60 minutes, the coating current of 5, 10, 15 and 20 mA and electrolyte solution temperatures for Pt layer synthesis of 25, 30 and 40°C were varied. Surface morphology and optical properties was analyzed by digital microscopic and UV-vis spectrophotometer. Pt films exhibit uniform surface area highly for all the conditions of coating current in the deposition time of 30 and 40 minutes at 40°C. Transmittance values of Pt films deposited on FTO substrate has approximately of 5 to 50 % show that occur high reflection corresponding to dye molecule absorption increases. DSSC device was fabricated from the TiO2 standard and immersed in dye N719 for 24 hours. Efficiency was measured by solar simulator. Efficiency value obtains as high as 5.91 % for the coating current, deposition time and solution temperature of 15 mA, 30 minutes and 40°C. Summary, influence of temperature effects efficiency increasing. Pt counter electrode can be prepared easily and the suitable usefully for DSSC.

Pulsed laser deposition of high Tc superconducting thin films

International Nuclear Information System (INIS)

Singh, R.K.; Narayan, J.

1990-01-01

This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

Science.gov (United States)

Asl, Hassan Zare; Rozati, Seyed Mohammad

2018-03-01

In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

Science.gov (United States)

Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

2014-10-07

In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

Science.gov (United States)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

International Nuclear Information System (INIS)

Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

2016-01-01

Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Moderate temperature gas purification system: Application to high calorific coal-derived fuel

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, M.; Shirai, H.; Nunokawa, M. [Central Research Institute of Electric Power Industry, Kanagawa (Japan)

2008-01-15

Simultaneous removal of dust, alkaline and alkaline-earth metals, halides and sulfur compounds is required to enlarge application of coal-derived gas to the high-temperature fuel cells and the fuel synthesis through chemical processing. Because high calorific fuel gas, such as oxygen-blown coal gas, has high carbon monoxide content, high-temperature (above 450{sup o}C) gas purification system is always subjected to the carbon deposition. We suggest moderate temperature (around 300{sup o}C) operation of the gas purification system to avoid the harmful disproportionation reaction and efficient removal of the various contaminants. Because the reaction rate is predominant to the performance of contaminant removal in the moderate temperature gas purification system, we evaluated the chemical removal processes; performance of the removal processes for halides and sulfur compounds was experimentally evaluated. The halide removal process with sodium aluminate sorbent had potential performance at around 300{sup o}C. The sulfur removal process with zinc ferrite sorbent was also applicable to the temperature range, though the reaction kinetics of the sorbent is essential to be approved.

Recent improvements in the filtration of corrosion products in high temperature water and application to reactor circuits

International Nuclear Information System (INIS)

Darras, R.; Dolle, L.; Chenouard, J.; Laylavoix, F.

1977-01-01

The nature and physico-chemical behavior of corrosion products released by structural materials into high temperature water flowing in power reactor circuits have been investigated in test loops and different power plants. The results improve more particularly the knowledge of probable rate constants governing their disappearance through deposition of crud on the fuel cladding. It appears that a considerable limitation of radioactivity transportation in the primary circuit components of pressurized water reactors is in a general way only possible through extraction of the corrosion products by filtration at a rate adequate to minimize the amount of crud deposited in the core. This extraction rate has been estimated; its magnitude implicates a filtration operating on the high temperature water in the primary circuit which allows the necessary high flows. The application of magnetic and electromagnetic so as deep granular graphite bed filters has been studied. The results concerning efficiencies and limiting yields at high temperatures are given. Estimates concerning technological feasibility and corresponding investments are discussed

Near room temperature chemical vapor deposition of graphene with diluted methane and molten gallium catalyst.

Science.gov (United States)

Fujita, Jun-Ichi; Hiyama, Takaki; Hirukawa, Ayaka; Kondo, Takahiro; Nakamura, Junji; Ito, Shin-Ichi; Araki, Ryosuke; Ito, Yoshikazu; Takeguchi, Masaki; Pai, Woei Wu

2017-09-28

Direct growth of graphene integrated into electronic devices is highly desirable but difficult due to the nominal ~1000 °C chemical vapor deposition (CVD) temperature, which can seriously deteriorate the substrates. Here we report a great reduction of graphene CVD temperature, down to 50 °C on sapphire and 100 °C on polycarbonate, by using dilute methane as the source and molten gallium (Ga) as catalysts. The very low temperature graphene synthesis is made possible by carbon attachment to the island edges of pre-existing graphene nuclei islands, and causes no damages to the substrates. A key benefit of using molten Ga catalyst is the enhanced methane absorption in Ga at lower temperatures; this leads to a surprisingly low apparent reaction barrier of ~0.16 eV below 300 °C. The faster growth kinetics due to a low reaction barrier and a demonstrated low-temperature graphene nuclei transfer protocol can facilitate practical direct graphene synthesis on many kinds of substrates down to 50-100 °C. Our results represent a significant progress in reducing graphene synthesis temperature and understanding its mechanism.

Small grain size zirconium-based coatings deposited by magnetron sputtering at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Jimenez, O., E-mail: omar.jimenez.udg@gmail.com [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Audronis, M.; Leyland, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Flores, M.; Rodriguez, E. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Kanakis, K.; Matthews, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)

2015-09-30

Hard, partly amorphous, ZrTiB(N) coatings were deposited by Physical Vapour Deposition (PVD) onto (111) silicon wafers at low substrate temperatures of 85 and 110 °C using Closed Field Unbalanced Magnetron Sputtering. A segmented rectangular sputter target composed of three pieces (Zr/TiB{sub 2}/Zr) was used as the source of evaporation of coating components. Two different substrate biases (i.e. floating potential and − 50 V) and N{sub 2} reactive-gas flow rates of 2, 4 and 6 sccm were employed as the main deposition parameter variables. The chemical composition, structure, morphology and mechanical properties were investigated using a variety of analytical techniques such as Glow-Discharge Optical Emission Spectroscopy, cross-sectional Scanning Electron Microscopy (SEM), Glancing Angle X-ray Diffraction (GAXRD) and nanoindentation. With other parameters fixed, coating properties were found to be dependent on the substrate negative bias and nitrogen flow rate. Linear scan profiles and SEM imaging revealed that all coatings were smooth, dense and featureless (in fracture cross section) with no apparent columnar morphology or macro-defects. GAXRD structural analysis revealed that mostly metallic phases were formed for coatings containing no nitrogen, whereas a solid solution (Zr,Ti)N single phase nitride was found in most of the reactively deposited coatings — exhibiting a very small grain size due to nitrogen and boron grain refinement effects. Hardness values from as low as 8.6 GPa up to a maximum of 25.9 GPa are related mainly to solid solution strengthening effects. The measured elastic moduli correlated with the trends in hardness behaviour; values in the range of 120–200 GPa were observed depending on the selected deposition parameters. Also, high H/E values (> 0.1) were achieved with several of the coatings.

Catalyzed deuterium-deuterium and deuterium-tritium fusion blankets for high temperature process heat production

International Nuclear Information System (INIS)

Ragheb, M.M.H.; Salimi, B.

1982-01-01

Tritiumless blanket designs, associated with a catalyzed deuterium-deuterium (D-D) fusion cycle and using a single high temperature solid pebble or falling bed zone, for process heat production, are proposed. Neutronics and photonics calculations, using the Monte Carlo method, show that an about 90% heat deposition fraction is possible in the high temperature zone, compared to a 30 to 40% fraction if a deuterium-tritium (D-T) fusion cycle is used with separate breeding and heat deposition zones. Such a design is intended primarily for synthetic fuels manufacture through hydrogen production using high temperature water electrolysis. A system analysis involving plant energy balances and accounting for the different fusion energy partitions into neutrons and charged particles showed that plasma amplification factors in the range of 2 are needed. In terms of maximization of process heat and electricity production, and the maximization of the ratio of high temperature process heat to electricity, the catalyzed D-D system outperforms the D-T one by about 20%. The concept is thought competitive to the lithium boiler concept for such applications, with the added potential advantages of lower tritium inventories in the plasma, reduced lithium pumping (in the case of magnetic confinement) and safety problems, less radiation damage at the first wall, and minimized risks of radioactive product contamination by tritium

High-rate anisotropic ablation and deposition of polytetrafluoroethylene using synchrotron radiation process

International Nuclear Information System (INIS)

Inayoshi, Muneto; Ikeda, Masanobu; Hori, Masaru; Goto, Toshio; Hiramatsu, Mineo; Hiraya, Atsunari.

1995-01-01

Both anisotropic ablation and thin film formation of polytetrafluoroethylene (PTFE) were successfully demonstrated using synchrotron radiation (SR) irradiation of PTFE, that is, the SR ablation process. Anisotropic ablation by the SR irradiation was performed at an extremely high rate of 3500 μm/min at a PTFE target temperature of 200degC. Moreover, a PTFE thin film was formed at a high rate of 2.6 μm/min using SR ablation of PTFE. The chemical structure of the deposited film was similar to that of the PTFE target as determined from Fourier transform infrared absorption spectroscopy (FT-IR) analysis. (author)

Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

International Nuclear Information System (INIS)

Lee, W.W.; Reeves, R.R.

1992-01-01

A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

Temperature dependence of the residual stresses and mechanical properties in TiN/CrN nano-layered coatings processed by cathodic arc deposition

International Nuclear Information System (INIS)

Lomello, F.; Arab Pour Yazdi; Sanchette, F.; Schuster, F.; Tabarant, M.; Billard, A.

2014-01-01

Nano-layered TiN-CrN coatings were synthesized by cathodic arc deposition (CAD) on M2 tool steel substrates. The aim of this study was to establish a double-correlation between the influence of the bilayer period and the deposition temperature on the resulting mechanical-tribological properties. The superlattice hardening enhancement was observed in samples deposited at different temperatures - i.e. without additional heating, 300 C and 400 C. Nonetheless, the residual compressive stresses are believed to be the responsible for reducing the hardness enhancement when the deposition temperature was increased. For instance, sample deposited without additional heating presented a hardness of 48.5 ± 1.3 GPa, while by increasing the processing temperature up to 400 C it was reduced down to 31.2 ± 4.1 GPa due to the stress relaxation. Indeed, the sample deposited at low temperature which possesses the thinnest bilayer period (13 nm) exhibited better mechanical properties. On the contrary, the role of the interfaces introduced when the period is decreased seems to rule the wear resistance. (authors)

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

The crystallization and properties of sputter deposited lithium niobite

Energy Technology Data Exchange (ETDEWEB)

Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W., E-mail: alan.doolittle@ece.gatech.edu

2016-06-30

Sputter deposition of the thin film memristor material, lithium niobite (LiNbO{sub 2}) is performed by co-deposition from a lithium oxide (Li{sub 2}O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO{sub 2}. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO{sub 2} films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO{sub 2}) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material.

The crystallization and properties of sputter deposited lithium niobite

International Nuclear Information System (INIS)

Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W.

2016-01-01

Sputter deposition of the thin film memristor material, lithium niobite (LiNbO_2) is performed by co-deposition from a lithium oxide (Li_2O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO_2. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO_2 films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO_2) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material

The ReactorSTM: Atomically resolved scanning tunneling microscopy under high-pressure, high-temperature catalytic reaction conditions

Energy Technology Data Exchange (ETDEWEB)

Herbschleb, C. T.; Tuijn, P. C. van der; Roobol, S. B.; Navarro, V.; Bakker, J. W.; Liu, Q.; Stoltz, D.; Cañas-Ventura, M. E.; Verdoes, G.; Spronsen, M. A. van; Bergman, M.; Crama, L.; Taminiau, I.; Frenken, J. W. M., E-mail: frenken@physics.leidenuniv.nl [Huygens-Kamerlingh Onnes Laboratory, Leiden University, P.O. box 9504, 2300 RA Leiden (Netherlands); Ofitserov, A.; Baarle, G. J. C. van [Leiden Probe Microscopy B.V., J.H. Oortweg 21, 2333 CH Leiden (Netherlands)

2014-08-15

To enable atomic-scale observations of model catalysts under conditions approaching those used by the chemical industry, we have developed a second generation, high-pressure, high-temperature scanning tunneling microscope (STM): the ReactorSTM. It consists of a compact STM scanner, of which the tip extends into a 0.5 ml reactor flow-cell, that is housed in a ultra-high vacuum (UHV) system. The STM can be operated from UHV to 6 bars and from room temperature up to 600 K. A gas mixing and analysis system optimized for fast response times allows us to directly correlate the surface structure observed by STM with reactivity measurements from a mass spectrometer. The in situ STM experiments can be combined with ex situ UHV sample preparation and analysis techniques, including ion bombardment, thin film deposition, low-energy electron diffraction and x-ray photoelectron spectroscopy. The performance of the instrument is demonstrated by atomically resolved images of Au(111) and atom-row resolution on Pt(110), both under high-pressure and high-temperature conditions.

High Temperature Dry Sliding Friction and Wear Performance of Laser Cladding WC/Ni Composite Coating

Directory of Open Access Journals (Sweden)

YANG Jiao-xi

2016-06-01

Full Text Available Two different types of agglomerate and angular WC/Ni matrix composite coatings were deposited by laser cladding. The high temperature wear resistance of these composite coatings was tested with a ring-on-disc MMG-10 apparatus. The morphologies of the worn surfaces were observed using a scanning electron microscopy (SEM equipped with an energy dispersive spectroscopy (EDS for elemental composition. The results show that the high temperature wear resistance of the laser clad WC/Ni-based composite coatings is improved significantly with WC mass fraction increasing. The 60% agglomerate WC/Ni composite coating has optimal high temperature wear resistance. High temperature wear mechanism of 60% WC/Ni composite coating is from abrasive wear of low temperature into composite function of the oxidation wear and abrasive wear.

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

International Nuclear Information System (INIS)

Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

2014-01-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

2014-07-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

KAUST Repository

Smith, Casey; Qaisi, Ramy M.; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-01-01

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

KAUST Repository

Smith, Casey

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

Effect of Water Vapor on High-Temperature Corrosion under Conditions Mimicking Biomass Firing

DEFF Research Database (Denmark)

Okoro, Sunday Chukwudi; Montgomery, Melanie; Jappe Frandsen, Flemming

2015-01-01

The variable flue gas composition in biomass-fired plants, among other parameters, contributes to the complexityof high-temperature corrosion of materials. Systematic parameter studies are thus necessary to understand the underlyingcorrosion mechanisms. This paper investigates the effect of water...... (H2O) vapor content in the flue gas on the high-temperaturecorrosion of austenitic stainless steel (TP 347H FG) under laboratory conditions, to improve the understanding of corrosionmechanisms. Deposit-coated and deposit-free samples were isothermally exposed for 72 h in a synthetic flue gas...... previouslyreported findings suggest that an increase in the water vapor content will cause competitive adsorption on active sites....

Influence of emitter temperature on the energy deposition in a low-pressure plasma

International Nuclear Information System (INIS)

Levko, Dmitry; Raja, Laxminarayan L.

2016-01-01

The influence of emitter temperature on the energy deposition into low-pressure plasma is studied by the self-consistent one-dimensional Particle-in-Cell Monte Carlo Collisions model. Depending on the emitter temperature, different modes of discharge operation are obtained. The mode type depends on the plasma frequency and does not depend on the ratio between the densities of beam and plasma electrons. Namely, plasma is stable when the plasma frequency is small. For this plasma, the energy transfer from emitted electrons to plasma electrons is inefficient. The increase in the plasma frequency results first in the excitation of two-stream electron instability. However, since the thermal velocity of plasma electrons is smaller than the electrostatic wave velocity, the resonant wave-particle interaction is inefficient for the energy deposition into the plasma. Further increase in the plasma frequency leads to the distortion of beam of emitted electrons. Then, the electrostatic wave generated due to two-stream instability decays into multiple slower waves. Phase velocities of these waves are comparable with the thermal velocity of plasma electrons which makes possible the resonant wave-particle interaction. This results in the efficient energy deposition from emitted electrons into the plasma.

Bulk heterojunction perovskite solar cells based on room temperature deposited hole-blocking layer: Suppressed hysteresis and flexible photovoltaic application

Science.gov (United States)

Chen, Zhiliang; Yang, Guang; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Ma, Junjie; Wang, Hao; Fang, Guojia

2017-05-01

Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C61-butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates, respectively.

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2002-01-01

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

Energy Technology Data Exchange (ETDEWEB)

Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

2014-11-28

The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

NARCIS (Netherlands)

Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

2013-01-01

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

Hideout in steam generator tube deposits

International Nuclear Information System (INIS)

Balakrishnan, P.V.; Franklin, K.J.; Turner, C.W.

1998-05-01

Hideout in deposits on steam generator tubes was studied using tubes coated with magnetite. Hideout from sodium chloride solutions at 279 degrees C was followed using an on-line high-temperature conductivity probe, as well as by chemical analysis of solution samples from the autoclave in which the studies were done. Significant hideout was observed only at a heat flux greater than 200 kW/m 2 , corresponding to a temperature drop greater than 2 degrees C across the deposits. The concentration factor resulting from the hideout increased highly non-linearly with the heat flux (varying as high as the fourth power of the heat flux). The decrease in the apparent concentration factor with increasing deposit thickness suggested that the pores in the deposit were occupied by a mixture of steam and water, which is consistent with the conclusion from the thermal conductivity measurements on deposits in a separate study. Analyses of the deposits after the hideout tests showed no evidence of any hidden-out solute species, probably due to the concentrations being very near the detection limits and to their escape from the deposit as the tests were being ended. This study showed that hideout in deposits may concentrate solutes in the steam generator bulk water by a factor as high as 2 x 10 3 . Corrosion was evident under the deposit in some tests, with some chromium enrichment on the surface of the tube. Chromium enrichment usually indicates an acidic environment, but the mobility required of chromium to become incorporated into the thick magnetite deposit may indicate corrosion under an alkaline environment. An alkaline environment could result from preferential accumulation of sodium in the solution in the deposit during the hideout process. (author)

Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

International Nuclear Information System (INIS)

Sepulveda-Guzman, S.; Reeja-Jayan, B.; De la Rosa, E.; Ortiz-Mendez, U.; Reyes-Betanzo, C.; Cruz-Silva, R.; Jose-Yacaman, M.

2010-01-01

In this work patterned ZnO films were prepared at room-temperature by deposition of ∼5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation (λ = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

Energy Technology Data Exchange (ETDEWEB)

Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reeja-Jayan, B. [Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States); De la Rosa, E. [Centro de Investigacion en Optica, Loma del Bosque 115 Col. Lomas del Campestre C.P. 37150 Leon, Gto. Mexico (Mexico); Ortiz-Mendez, U. [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reyes-Betanzo, C. [Instituto Nacional de Astrofisica Optica y Electronica, Calle Luis Enrique Erro No. 1, Santa Maria Tonanzintla, Puebla. Apdo. Postal 51 y 216, C.P. 72000 Puebla (Mexico); Cruz-Silva, R. [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001, Col. Chamilpa, CP 62210 Cuernavaca, Mor. (Mexico); Jose-Yacaman, M. [Physics and Astronomy Department University of Texas at San Antonio 1604 campus San Antonio, TX 78249 (United States)

2010-03-15

In this work patterned ZnO films were prepared at room-temperature by deposition of {approx}5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation ({lambda} = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

Coal-fired power plants and the causes of high temperature corrosion

Energy Technology Data Exchange (ETDEWEB)

Oakey, J E; Simms, N J [British Coal Corporation, Coal Technology Development Div., Cheltenham, Glos (United Kingdom); Tomkings, A B [ERA Technology Ltd., Leatherhead, Surrey (United Kingdom)

1996-12-01

The heat exchangers in all types of coal-fired power plant operate in aggressive, high temperature environments where high temperature corrosion can severely limit their service lives. The extent of this corrosion is governed by the combined effects of the operating conditions of the heat exchanger and the presence of corrosive species released from the coal during operation. This paper reviews the coal-related factors, such as ash deposition, which influence the operating environments of heat exchangers in three types of coal-fired power plant - conventional pulverized coal boilers, fluidized bed boilers and coal gasification systems. The effects on the performance of the materials used for these heat exchangers are then compared. (au) 35 refs.

Moderate temperature gas purification system: application to high calorific coal derived fuel

Energy Technology Data Exchange (ETDEWEB)

M. Kobayashi; H. Shirai; M. Nunokawa [Central Research Institute of Electric Power Industry (CRIEPI), Kanagawa (Japan)

2005-07-01

Simultaneous removal of dust, alkaline and alkaline-earth metals, halides and sulfur compounds is required to enlarge application of coal-derived gas to the high temperature fuel cells and the fuel synthesis through chemical processing. Because high calorific fuel gas, such as oxygen-blown coal gas, has high carbon monoxide content, high temperature gas purification system is always subjected to the carbon deposition and slippage of contaminant of high vapor pressure. It was suggested that moderate temperature operation of the gas purification system is applied to avoid the harmful disproportionation reaction and efficient removal of the various contaminants. To establish the moderate temperature gas purification system, the chemical-removal processes where the reaction rate is predominant to the performance of contaminant removal should be evaluated. Performance of the removal processes for halides and sulfur compounds were experimentally evaluated. The halide removal process with sodium based sorbent had potential good performance at around 300{sup o}C. The sulfur removal process was also applicable to the temperature range, although the improvement of the sulfidation reaction rate is considered to be essential. 11 refs., 8 figs., 1 tab.

Electrical treeing behaviors in silicone rubber under an impulse voltage considering high temperature

Science.gov (United States)

Yunxiao, ZHANG; Yuanxiang, ZHOU; Ling, ZHANG; Zhen, LIN; Jie, LIU; Zhongliu, ZHOU

2018-05-01

In this paper, work was conducted to reveal electrical tree behaviors (initiation and propagation) of silicone rubber (SIR) under an impulse voltage with high temperature. Impulse frequencies ranging from 10 Hz to 1 kHz were applied and the temperature was controlled between 30 °C and 90 °C. Experimental results show that tree initiation voltage decreases with increasing pulse frequency, and the descending amplitude is different in different frequency bands. As the pulse frequency increases, more frequent partial discharges occur in the channel, increasing the tree growth rate and the final shape intensity. As for temperature, the initiation voltage decreases and the tree shape becomes denser as the temperature gets higher. Based on differential scanning calorimetry results, we believe that partial segment relaxation of SIR at high temperature leads to a decrease in the initiation voltage. However, the tree growth rate decreases with increasing temperature. Carbonization deposition in the channel under high temperature was observed under microscope and proven by Raman analysis. Different tree growth models considering tree channel characteristics are proposed. It is believed that increasing the conductivity in the tree channel restrains the partial discharge, holding back the tree growth at high temperature.

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

Science.gov (United States)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Integrated heat transport simulation of high ion temperature plasma of LHD

International Nuclear Information System (INIS)

Murakami, S.; Yamaguchi, H.; Sakai, A.

2014-10-01

A first dynamical simulation of high ion temperature plasma with carbon pellet injection of LHD is performed by the integrated simulation GNET-TD + TASK3D. NBI heating deposition of time evolving plasma is evaluated by the 5D drift kinetic equation solver, GNET-TD and the heat transport of multi-ion species plasma (e, H, He, C) is studied by the integrated transport simulation code, TASK3D. Achievement of high ion temperature plasma is attributed to the 1) increase of heating power per ion due to the temporal increase of effective charge, 2) reduction of effective neoclassical transport with impurities, 3) reduction of turbulence transport. The reduction of turbulence transport is most significant contribution to achieve the high ion temperature and the reduction of the turbulent transport from the L-mode plasma (normal hydrogen plasma) is evaluated to be a factor about five by using integrated heat transport simulation code. Applying the Z effective dependent turbulent reduction model we obtain a similar time behavior of ion temperature after the C pellet injection with the experimental results. (author)

High Temperature Thermoplastic Additive Manufacturing Using Low-Cost, Open-Source Hardware

Science.gov (United States)

Gardner, John M.; Stelter, Christopher J.; Yashin, Edward A.; Siochi, Emilie J.

2016-01-01

Additive manufacturing (or 3D printing) via Fused Filament Fabrication (FFF), also known as Fused Deposition Modeling (FDM), is a process where material is placed in specific locations layer-by-layer to create a complete part. Printers designed for FFF build parts by extruding a thermoplastic filament from a nozzle in a predetermined path. Originally developed for commercial printers, 3D printing via FFF has become accessible to a much larger community of users since the introduction of Reprap printers. These low-cost, desktop machines are typically used to print prototype parts or novelty items. As the adoption of desktop sized 3D printers broadens, there is increased demand for these machines to produce functional parts that can withstand harsher conditions such as high temperature and mechanical loads. Materials meeting these requirements tend to possess better mechanical properties and higher glass transition temperatures (Tg), thus requiring printers with high temperature printing capability. This report outlines the problems and solutions, and includes a detailed description of the machine design, printing parameters, and processes specific to high temperature thermoplastic 3D printing.

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Araiza, J J [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Paseo a la Bufa esq, Calzada Solidaridad s/n 98060, Zacatecas (Mexico); Sanchez, O [Departamento de Fisica e Ingenieria de Superficies, Instituto de Ciencia de Materiales de Madrid-CSIC, C/ Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain)], E-mail: olgas@icmm.csic.es

2009-06-07

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr{sub 3}N{sub 4} (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Genetic-Structural relations in some types of spanish uranium deposits

International Nuclear Information System (INIS)

Alia Medina, M.

1962-01-01

On the spanish hercynian areas there are different types of uraniferous deposits, which may be classified in the following groups: Group I, high temperature magmatic deposits, Group II, low temperature veins and Group III supergenic deposits, generated by weathering of the former ones or by lixiviation of the intra granitic uranium. The deposits belonging to Group I are founding the hercynian ge anticlinal; those of Groups II and III, chiefly in the eugeosyncline. The explanation suggested for these genetic-structural relationships assumes that, in the ge anticlinal, uranium would migrate from the dioritic magmas to form and high temperature deposits. In the eugeosyncline, a large fraction of the uranium would migrate towards more differentiated granites, in which it might partially remain or from which it might have been finally concentrated in the epithermal veins or by later tectonic actions. The Group III deposits ar more frequent in the eugeosyncline, due to the greater abundance of more differentiated intrusive rocks. (Author) 16 refs

Comparison Of The MWCNTs-Rh And MWCNTs-Re Carbon-Metal Nanocomposites Obtained In High-Temperature

Directory of Open Access Journals (Sweden)

Dobrzańska-Danikiewicz A.D.

2015-09-01

Full Text Available Carbon-metal nanocomposites consisting of multiwalled carbon nanotubes coated with rhodium or rhenium nanoparticles by the high-temperature method were fabricated during the research undertaken. Multiwalled carbon nanotubes fabricated by Catalytic-Chemical Vapour Deposition (CCVD were used in the investigations. Multiwalled carbon nanotubes functionalisation in acid or in a mixture of acids was applied to deposit rhodium or rhenium nanoparticles onto the surface of carbon nanotubes, and then the material was placed in a solution being a precursor of metallic nanoparticles. The material prepared was next subjected to high-temperature reduction in the atmosphere of argon and/or hydrogen to deposit rhodium or rhenium nanoparticles onto the surface of multiwalled carbon nanotubes. The investigations performed include, respectively: fabrication of a CNT-NPs (Carbon NanoTube-NanoParticles nanocomposite material; the characterisation of the material produced including examination of the structure and morphology, and the assessment of rhodium and/or rhenium nanoparticles distribution on the surface of carbon nanotubes. Micro- and spectroscopy techniques were employed to characterise the structure of the nanocomposites obtained.

Method for producing ceramic composition having low friction coefficient at high operating temperatures

Science.gov (United States)

Lankford, Jr., James

1988-01-01

A method for producing a stable ceramic composition having a surface with a low friction coefficient and high wear resistance at high operating temperatures. A first deposition of a thin film of a metal ion is made upon the surface of the ceramic composition and then a first ion implantation of at least a portion of the metal ion is made into the near surface region of the composition. The implantation mixes the metal ion and the ceramic composition to form a near surface composite. The near surface composite is then oxidized sufficiently at high oxidizing temperatures to form an oxide gradient layer in the surface of the ceramic composition.

Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

Science.gov (United States)

Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

2017-11-01

High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

International Nuclear Information System (INIS)

Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

2014-01-01

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

Tribological behavior at elevated temperature of multilayer TiCN/TiC/TiN hard coatings produced by chemical vapor deposition

International Nuclear Information System (INIS)

Bao Mingdong; Xu Xuebo; Zhang Haijun; Liu Xiaoping; Tian Linhai; Zeng Zhaoxin; Song Yubin

2011-01-01

Multilayer hard coatings of TiCN/TiC/TiN on high speed steel substrates were deposited using a chemical vapor deposition system. Evaluations of microstructure, wear morphology of coatings were characterized by scanning electron microscopy, and optical microscopy. Friction coefficient and wear rates of coatings were investigated using ball-on-disk tester sliding against a WC ball at a constant load of 20 N. Tribological behavior of the coatings at room and elevated temperature were discussed. Different changing tendency of friction coefficient were observed from ball-on-disc experiments. Results showed that the friction coefficient of coatings increased gradually to a highest value, then to a relatively constant value at room temperature dry sliding wear. The friction coefficient exhibited a reverse variation tendency at temperature of 550 °C. It got a higher value at the first sliding friction cycles. Then the value of friction coefficient decreased, suffered irregular oscillations and kept a relatively lower value with increasing sliding time. Reasons of the variation of friction coefficient with sliding time and wear mechanism were analyzed and discussed at room and elevated temperatures, respectively.

Influence of deposits quantity and air temperature on 137Cs accumulation by the higher mushrooms

International Nuclear Information System (INIS)

Zarubina, N.E.

2012-01-01

Researches of the influence of weather conditions (amount of precipitation, air temperature) on 137 Cs content magnitude in fruit bodies of mushrooms: Boletus edulis Bull.: Fr., Suillus luteus (L.: Fr.) S.F.Gray, Xerocomus badius (Fr.) Kuhn. ex Gilb., Tricholoma flavovirens (Pers.: Fr.) Lund., Cantharellus cibarius Fr. at the territory of Chernobyl alienation zone and 'southern trace are performed. Correlation factors, determination factors between specific activity 137 Cs at mushrooms and quantity of deposits (mm) and the maximum temperature of air ( o C) are calculated. At calculations the decrease of the content of 137 Cs in mushrooms at the expense of disintegration of this isotope has been considered. As a result of researches the authentic dependence of specific activity 137 Cs in fruit bodies of the studied kinds of mushrooms from quantity of deposits and from air temperature has not been established.

Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

2015-09-30

The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

Modelling impacts of temperature, and acidifying and eutrophying deposition on DOC trends

Science.gov (United States)

Sawicka, Kasia; Rowe, Ed; Evans, Chris; Monteith, Don; Vanguelova, Elena; Wade, Andrew; Clark, Joanna

2017-04-01

Surface water dissolved organic carbon (DOC) concentrations in large parts of the northern hemisphere have risen over the past three decades, raising concern about enhanced contributions of carbon to the atmosphere and seas and oceans. The effect of declining acid deposition has been identified as a key control on DOC trends in soil and surface waters, since pH and ionic strength affect sorption and desorption of DOC. However, since DOC is derived mainly from recently-fixed carbon, and organic matter decomposition rates are considered sensitive to temperature, uncertainty persists regarding the extent to the relative importance of different drivers that affect these upward trends. We ran the dynamic model MADOC (Model of Acidity and Soil Organic Carbon) for a range of UK soils (podzols, gleysols and peatland), for which the time-series were available, to consider the likely relative importance of decreased deposition of sulphate and chloride, accumulation of reactive N, and higher temperatures, on DOC production in different soils. Modelled patterns of DOC change generally agreed favourably with measurements collated over 10-20 years, but differed markedly between sites. While the acidifying effect of sulphur deposition appeared to be the predominant control on the observed soil water DOC trends in all the soils considered other than a blanket peat, the model suggested that over the long term, the effects of nitrogen deposition on N-limited soils may have been sufficient to elevate the DOC recovery trajectory significantly. The second most influential cause of rising DOC in the model simulations was N deposition in ecosystems that are N-limited and respond with stimulated plant growth. Although non-marine chloride deposition made some contribution to acidification and recovery, it was not amongst the main drivers of DOC change. Warming had almost no effect on modelled historic DOC trends, but may prove to be a significant driver of DOC in future via its influence

Process maps for plasma spray. Part II: Deposition and properties

International Nuclear Information System (INIS)

XIANGYANG, JIANG; MATEJICEK, JIRI; KULKARNI, ANAND; HERMAN, HERBERT; SAMPATH, SANJAY; GILMORE, DELWYN L.; NEISER A, RICHARD Jr.

2000-01-01

This is the second paper of a two part series based on an integrated study carried out at the State University of New York at Stony Brook and Sandia National Laboratories. The goal of the study is the fundamental understanding of the plasma-particle interaction, droplet/substrate interaction, deposit formation dynamics and microstructure development as well as the deposit property. The outcome is science-based relationships, which can be used to link processing to performance. Molybdenum splats and coatings produced at 3 plasma conditions and three substrate temperatures were characterized. It was found that there is a strong mechanical/thermal interaction between droplet and substrate, which builds up the coatings/substrate adhesion. Hardness, thermal conductivity, and modulus increase, while oxygen content and porosity decrease with increasing particle velocity. Increasing deposition temperature resulted in dramatic improvement in coating thermal conductivity and hardness as well as increase in coating oxygen content. Indentation reveals improved fracture resistance for the coatings prepared at higher deposition temperature. Residual stress was significantly affected by deposition temperature, although not significant by particle energy within the investigated parameter range. Coatings prepared at high deposition temperature with high-energy particles suffered considerably less damage in wear tests. Possible mechanisms behind these changes are discussed within the context of relational maps which are under development

Aluminium Electrodeposition from Ionic Liquid: Effect of Deposition Temperature and Sonication †

Directory of Open Access Journals (Sweden)

Enrico Berretti

2016-08-01

Full Text Available Since their discovery, ionic liquids (ILs have attracted a wide interest for their potential use as a medium for many chemical processes, in particular electrochemistry. As electrochemical media they allow the electrodeposition of elements that are impossible to reduce in aqueous media. We have investigated the electrodeposition of aluminium from 1-butyl-3-methyl-imidazolium chloride ((BmimCl/AlCl3 (40/60 mol % as concerns the effect of deposition parameters on the quality of the deposits. Thick (20 μm aluminium coatings were electrodeposited on brass substrates at different temperatures and mixing conditions (mechanical stirring and sonication. These coatings were investigated by means of scanning electron microscope, roughness measurements, and X-ray diffraction to assess the morphology and the phase composition. Finally, electrochemical corrosion tests were carried out with the intent to correlate the deposition parameters to the anti-corrosion properties.

Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

International Nuclear Information System (INIS)

Zhu, Junyu; Chen, Ying; Xu, Wenfei; Yang, Jing; Bai, Wei; Wang, Genshui; Duan, Chungang; Tang, Zheng; Tang, Xiaodong

2011-01-01

Polycrystalline La 0.7 Sr 0.3 MnO 3 (LSMO) films were prepared on SiO 2 /Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature ( 0.7 Sr 0.3 MnO 3 films were grown by a modified chemical solution deposition route. → High quality LSMO thin films were prepared directly onto SiO 2 /Si substrates. → Abnormality in resistivity of LSMO films at low temperatures was studied in detail. → The abnormality was mainly attributed to Kondo-like spin dependent scattering.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-04-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Thermal Processing Effects on the Adhesive Strength of PS304 High Temperature Solid Lubricant Coatings

Science.gov (United States)

DellaCorte, Christopher; Edmonds, Brian J.; Benoy, Patricia A.

2001-01-01

In this paper the effects of post deposition heat treatments on the cohesive and adhesive strength properties of PS304, a plasma sprayed nickel-chrome based, high temperature solid lubricant coating deposited on stainless steel, are studied. Plasma spray deposited coating samples were exposed in air at temperatures from 432 to 650 C for up to 500 hr to promote residual stress relief, enhance particle to particle bonding and increase coating to substrate bond strength. Coating pull-off strength was measured using a commercial adhesion tester that utilizes 13 mm diameter aluminum pull studs attached to the coating surface with epoxy. Pull off force was automatically recorded and converted to coating pull off strength. As deposited coating samples were also tested as a baseline. The as-deposited (untreated) samples either delaminated at the coating-substrate interface or failed internally (cohesive failure) at about 17 MPa. Samples heat treated at temperatures above 540 C for 100 hr or at 600 C or above for more than 24 hr exhibited strengths above 31 MPa, nearly a two fold increase. Coating failure occurred inside the body of the coating (cohesive failure) for nearly all of the heat-treated samples and only occasionally at the coating substrate interface (adhesive failure). Metallographic analyses of heat-treated coatings indicate that the Nickel-Chromium binder in the PS304 appears to have segregated into two phases, a high nickel matrix phase and a high chromium precipitated phase. Analysis of the precipitates indicates the presence of silicon, a constituent of a flow enhancing additive in the commercial NiCr powder. The exact nature and structure of the precipitate phase is not known. This microstructural change is believed to be partially responsible for the coating strength increase. Diffusion bonding between particles may also be playing a role. Increasing the heat treatment temperature, exposure time or both accelerate the heat treatment process. Preliminary

Morphology and structural studies of WO{sub 3} films deposited on SrTiO{sub 3} by pulsed laser deposition