Effect of traps and defects on high temperature performance of Ge channel junctionless nanowire transistors

Directory of Open Access Journals (Sweden)

Chuanchuan Sun

2017-07-01

Full Text Available We investigate the effect of traps and defects on high temperature performance of p-type germanium-on-insulator (GOI based junctionless nanowire transistors (JNTs at temperatures ranging from 300 to 450 K. Temperature dependence of the main electrical parameters, such as drive current (Ion, leakage current (Ioff, threshold voltage (Vt, transconductance (Gm and subthreshold slope (SS are extracted and compared with the reported results of conventional inversion mode (IM MOSFETs and Si based JNTs. The results show that the high interface trap density (Dit and defects can degrade high temperature reliability of GOI based JNTs significantly, in terms of Ioff, Vt variation, Gm-max and SS values. The Ioff is much more dependent on temperature than Ion and mainly affected by trap-assisted-tunneling (TAT current. The Vt variation with temperature is larger than that for IM MOSFETs and SOI based JNTs, which can be mostly attributed to the high Dit. The high Dit can also induce high SS values. The maximum Gm has a weak dependence on temperature and is significantly influenced by neutral defects scattering. Limiting the Dit and neutral defect densities is critical for the reliability of GOI based JNTs working at high temperatures.

Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study

International Nuclear Information System (INIS)

Simeoni, M; Santucci, S; Picozzi, S; Delley, B

2006-01-01

The structural and electronic properties (in terms of Mulliken charges, density of states and band structures) of pristine and defective (10,0) AlN nanotubes have been calculated within density functional theory. The results show that, in several defective tubes, a spontaneous spin-polarization arises, due to the presence of spin-split flat bands close to the Fermi level, with a strong localization of the corresponding electronic states and of the magnetic moments. The highest positive spin-magnetization (3 μ B per cell) is found for the vacancy in the Al site, while the other magnetic tubes (the vacancy in N, C and O substitutional for N and Al, respectively) show a magnetization of only 1 μ B per cell. The spontaneous magnetization of some defective tubes might open the way to their use for spintronic applications

Theoretical studies of defects in insulators within the framework of the local density approximation

International Nuclear Information System (INIS)

Pederson, M.R.; Klein, B.M.

1989-01-01

The muffin-tin Green's function method and a linear combination of atomic orbitals cluster method for defect studies are discussed. These methods have been used to carry out calculations on F-like centers in MgO, CaO and LiF. Although the local density approximation leads to qualitatively correct information pertaining to the occupied states, in addition to the usual perfect-crystal band gap problem, the unoccupied defect levels are found to lie above the onset of the conducting band, in disagreement with the experimental measurements. Results using two methods for incorporating many-electron corrections into an LDA-like computational algorithm are discussed. These methods are the 'scissor-operator' approach to the band gap problem, and the self-interaction-correction (SIC) framework for improving the local spin density approximation. SIC results for the defect excitation spectra are in very good agreement with experiment. This method, when fully developed, should give an excellent ab initio description of defects in insulators. (author) 29 refs., 3 figs., 1 tab

Effect of point defects on the electronic density states of SnC nanosheets: First-principles calculations

Directory of Open Access Journals (Sweden)

Soleyman Majidi

Full Text Available In this work, we investigated the electronic and structural properties of various defects including single Sn and C vacancies, double vacancy of the Sn and C atoms, anti-sites, position exchange and the Stone–Wales (SW defects in SnC nanosheets by using density-functional theory (DFT. We found that various vacancy defects in the SnC monolayer can change the electronic and structural properties. Our results show that the SnC is an indirect band gap compound, with the band gap of 2.10 eV. The system turns into metal for both structure of the single Sn and C vacancies. However, for the double vacancy contained Sn and C atoms, the structure remains semiconductor with the direct band gap of 0.37 eV at the G point. We also found that for anti-site defects, the structure remains semiconductor and for the exchange defect, the structure becomes indirect semiconductor with the K-G point and the band gap of 0.74 eV. Finally, the structure of SW defect remains semiconductor with the direct band gap at K point with band gap of 0.54 eV. Keywords: SnC nanosheets, Density-functional theory, First-principles calculations, Electronic density of states, Band gap

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G

2014-12-07

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density functional theory employing hybrid functionals to analyze the formation of VV and VO2 defects. The formation energy as a function of the Fermi energy is calculated for all possible charge states. For the VV and VO2 defects double negatively charged and neutral states dominate, respectively.

Analysis of electronic models for solar cells including energy resolved defect densities

Energy Technology Data Exchange (ETDEWEB)

Glitzky, Annegret

2010-07-01

We introduce an electronic model for solar cells including energy resolved defect densities. The resulting drift-diffusion model corresponds to a generalized van Roosbroeck system with additional source terms coupled with ODEs containing space and energy as parameters for all defect densities. The system has to be considered in heterostructures and with mixed boundary conditions from device simulation. We give a weak formulation of the problem. If the boundary data and the sources are compatible with thermodynamic equilibrium the free energy along solutions decays monotonously. In other cases it may be increasing, but we estimate its growth. We establish boundedness and uniqueness results and prove the existence of a weak solution. This is done by considering a regularized problem, showing its solvability and the boundedness of its solutions independent of the regularization level. (orig.)

Investigation of room temperature UV emission of ZnO films with different defect densities induced by laser irradiation.

Science.gov (United States)

Zhao, Yan; Jiang, Yijian

2010-08-01

We studied the room temperature UV emission of ZnO films with different defect densities which is fabricated by KrF laser irradiation process. It is shown room temperature UV photoluminescence of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO) (1LO, 2LO). With increase of the defect density, the FX emission decreased and FX-LO emission increased dramatically; and the relative strengths of FX to FX-LO emission intensities determine the peak position and intensity of UV emission. What is more, laser irradiation with moderate energy density could induce the crystalline ZnO film with very flat and smooth surface. This investigation indicates that KrF laser irradiation could effectively modulate the exciton emission and surface morphology, which is important for the application of high performance of UV emitting optoelectronic devices. Copyright 2010 Elsevier B.V. All rights reserved.

High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

International Nuclear Information System (INIS)

Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

2007-01-01

A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

Dissociation and diffusion of hydrogen on defect-free and vacancy defective Mg (0001) surfaces: A density functional theory study

Energy Technology Data Exchange (ETDEWEB)

Han, Zongying [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Union Research Center of Fuel Cell, School of Chemical and Environmental Engineering, China University of Mining and Technology, Beijing 100083 (China); Chen, Haipeng [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Zhou, Shixue, E-mail: zhoushixue66@163.com [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China)

2017-02-01

Highlights: • Clarify the effect of vacancy defect on H{sub 2} dissociation on Mg (0001) surface. • Demonstrate the effects of vacancy defect on H atom diffusion. • Reveal the minimum energy diffusion path of H atom from magnesium surface into bulk. - Abstract: First-principles calculations with the density functional theory (DFT) have been carried out to study dissociation and diffusion of hydrogen on defect-free and vacancy defective Mg (0001) surfaces. Results show that energy barriers of 1.42 eV and 1.28 eV require to be overcome for H{sub 2} dissociation on defect-free and vacancy defective Mg (0001) surfaces respectively, indicating that reactivity of Mg (0001) surface is moderately increased due to vacancy defect. Besides, the existence of vacancy defect changes the preferential H atom diffusion entrance to the subsurface and reduces the diffusion energy barrier. An interesting remark is that the minimum energy diffusion path of H atom from magnesium surface into bulk is a spiral channel formed by staggered octahedral and tetrahedral interstitials. The diffusion barriers computed for H atom penetration from the surface into inner-layers are all less than 0.70 eV, which is much smaller than the activation energy for H{sub 2} dissociation on the Mg (0001) surface. This suggests that H{sub 2} dissociation is more likely than H diffusion to be rate-limiting step for magnesium hydrogenation.

Highly effective SNP-based association mapping and management of recessive defects in livestock

DEFF Research Database (Denmark)

Charlier, Carole; Coppieters, Wouter; Rollin, Frédéric

2008-01-01

The widespread use of elite sires by means of artificial insemination in livestock breeding leads to the frequent emergence of recessive genetic defects, which cause significant economic and animal welfare concerns. Here we show that the availability of genome-wide, high-density SNP panels, combi...

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

International Nuclear Information System (INIS)

Szállás, A.; Szász, K.; Trinh, X. T.; Son, N. T.; Janzén, E.; Gali, A.

2014-01-01

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

Energy Technology Data Exchange (ETDEWEB)

Szállás, A., E-mail: szallas.attila@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Szász, K. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Physics, Eötvös University, Pázmány Péter sétány 1/A, H-1117 Budapest (Hungary); Trinh, X. T.; Son, N. T.; Janzén, E. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Gali, A., E-mail: gali.adam@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest (Hungary)

2014-09-21

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

Nonlinear electron-density distribution around point defects in simple metals. I. Formulation

International Nuclear Information System (INIS)

Gupta, A.K.; Jena, P.; Singwi, K.S.

1978-01-01

Modification, which is exact in the limit of long wavelength, of the nonlinear theory of Sjoelander and Stott of electron distribution around point defects is given. This modification consists in writing a nonlinear integral equations for the Fourier transform γ 12 (q) of the induced charge density surrounding the point defect, which includes a term involving the density derivative of γ 12 (q). A generalization of the Pauli-Feynman coupling-constant-integration method, together with the Kohn-Sham formalism, is used to exactly determine the coefficient of this derivative term in the long-wavelength limit. The theory is then used to calculate electron-density profiles around a vacancy, an eight-atom void, and a point ion. The results are compared with those of (i) a linear theory, (ii) Sjoelander-Stott theory, and (iii) a fully self-consistent calculation based on the density-functional formalism of Kohn and Sham. It is found that in the case of a vacancy, the results of the present theory are in very good agreement with those based on Kohn-Sham formalism, whereas in the case of a singular attractive potential of a proton, the results are quite poor in the vicinity of the proton, but much better for larger distances. A critical discussion of the theory vis a vis the Kohn-Sham formalism is also given. Some applications of the theory are pointed out

Influence of aspect ratio and surface defect density on hydrothermally grown ZnO nanorods towards amperometric glucose biosensing applications

Science.gov (United States)

Shukla, Mayoorika; Pramila; Dixit, Tejendra; Prakash, Rajiv; Palani, I. A.; Singh, Vipul

2017-11-01

In this work, hydrothermally grown ZnO Nanorods Array (ZNA) has been synthesized over Platinum (Pt) coated glass substrate, for biosensing applications. In-situ addition of strong oxidizing agent viz KMnO4 during hydrothermal growth was found to have profound effect on the physical properties of ZNA. Glucose oxidase (GOx) was later immobilized over ZNA by means of physical adsorption process. Further influence of varying aspect ratio, enzyme loading and surface defects on amperometric glucose biosensor has been analyzed. Significant variation in biosensor performance was observed by varying the amount of KMnO4 addition during the growth. Moreover, investigations revealed that the suppression of surface defects and aspect ratio variation of the ZNA played key role towards the observed improvement in the biosensor performance, thereby significantly affecting the sensitivity and response time of the fabricated biosensor. Among different biosensors fabricated having varied aspect ratio and surface defect density of ZNA, the best electrode resulted into sensitivity and response time to be 18.7 mA cm-2 M-1 and <5 s respectively. The observed results revealed that apart from high aspect ratio nanostructures and the extent of enzyme loading, surface defect density also hold a key towards ZnO nanostructures based bio-sensing applications.

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G; Wang, Hao; Chroneos, Alexander I.; Londos, Charalampos A.; Sgourou, Efstratia N.; Schwingenschlö gl, Udo

2014-01-01

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires.

Science.gov (United States)

Chen, Yujie; Burgess, Tim; An, Xianghai; Mai, Yiu-Wing; Tan, H Hoe; Zou, Jin; Ringer, Simon P; Jagadish, Chennupati; Liao, Xiaozhou

2016-03-09

Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.

Defect engineering for 650 nm high-power AlGaInP laser diodes

International Nuclear Information System (INIS)

Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

2006-01-01

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

International Nuclear Information System (INIS)

Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

2008-01-01

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

High energy density capacitors fabricated by thin film technology

International Nuclear Information System (INIS)

Barbee, T W; Johnson, G W; Wagner, A V.

1999-01-01

Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

Thermal conductivity of graphene with defects induced by electron beam irradiation

Science.gov (United States)

Malekpour, Hoda; Ramnani, Pankaj; Srinivasan, Srilok; Balasubramanian, Ganesh; Nika, Denis L.; Mulchandani, Ashok; Lake, Roger K.; Balandin, Alexander A.

2016-07-01

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm-2 to 1.8 × 1011 cm-2 the thermal conductivity decreases from ~(1.8 +/- 0.2) × 103 W mK-1 to ~(4.0 +/- 0.2) × 102 W mK-1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ~400 W mK-1. The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm-2 to 1.8 × 1011 cm-2 the thermal conductivity decreases from ~(1.8 +/- 0.2) × 103 W mK-1 to ~(4.0 +/- 0.2) × 102 W mK-1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ~400 W mK-1. The thermal conductivity dependence on the defect density is

Cell density signal protein suitable for treatment of connective tissue injuries and defects

Science.gov (United States)

Schwarz, Richard I.

2002-08-13

Identification, isolation and partial sequencing of a cell density protein produced by fibroblastic cells. The cell density signal protein comprising a 14 amino acid peptide or a fragment, variant, mutant or analog thereof, the deduced cDNA sequence from the 14 amino acid peptide, a recombinant protein, protein and peptide-specific antibodies, and the use of the peptide and peptide-specific antibodies as therapeutic agents for regulation of cell differentiation and proliferation. A method for treatment and repair of connective tissue and tendon injuries, collagen deficiency, and connective tissue defects.

Microstructural factors influencing critical-current densities of high-temperature superconductors

International Nuclear Information System (INIS)

Suenaga, M.

1992-01-01

Microstructural defects are the primary determining factors for the values of critical current densities in superconductors. A review is made to assess, (1) what would be the maximum achievable critical-current density in the oxide superconductors if nearly ideal pinning sites were introduced? and (2) what types of pinning defects are currently introduced in these superconductors and how effective are these in pinning the vortices? Only the case where the applied field is parallel to the c-axis is considered here

Control of magnonic spectra in cobalt nanohole arrays: the effects of density, symmetry and defects

International Nuclear Information System (INIS)

Barman, Anjan

2010-01-01

Magnetic nanohole arrays are important systems for propagation of magnetic excitations and are among the potential candidates for magnonic crystals. A thorough investigation of magnonic band structures and the effect of the geometry of the array on them are important. Here, we present a systematic micromagnetic simulation study of magnonic modes in cobalt nanohole (antidot) arrays. In particular, we investigate the effects of the areal density and symmetry of the array and defects introduced in the array. The magnonic modes are strongly dependent on the density and the symmetry of the array but are weakly dependent on the defects. We have further investigated the modes in a tailored array consisting of equally wide hexagonal arrays with varying density. The magnonic spectrum of the tailored array contains additional modes above the modes of the constituent arrays due to the appearance of irregular domain structures at the regions joining arrays of two different types. This opens up the possibility of tuning the magnonic bands in magnetic nanohole arrays by careful design of the structure of the array.

Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors

Science.gov (United States)

Modine, N. A.; Wright, A. F.; Lee, S. R.

The rate of defect-induced carrier recombination is determined by both defect levels and carrier capture cross-sections. Density functional theory (DFT) has been widely and successfully used to predict defect levels, but only recently has work begun to focus on using DFT to determine carrier capture cross-sections. Lang and Henry developed the theory of carrier-capture by multiphonon emission in the 1970s and showed that carrier-capture cross-sections differ between defects primarily due to differences in their carrier capture activation energies. We present an approach to using DFT to calculate carrier capture activation energies that does not depend on an assumed configuration coordinate and that fully accounts for anharmonic effects, which can substantially modify carrier activation energies. We demonstrate our approach for intrinisic defects in GaAs and GaN and discuss how our results depend on the choice of exchange-correlation functional and the treatment of spin polarization. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Threshold defect production in silicon determined by density functional theory molecular dynamics simulations

International Nuclear Information System (INIS)

Holmstroem, E.; Kuronen, A.; Nordlund, K.

2008-01-01

We studied threshold displacement energies for creating stable Frenkel pairs in silicon using density functional theory molecular dynamics simulations. The average threshold energy over all lattice directions was found to be 36±2 STAT ±2 SYST eV, and thresholds in the directions and were found to be 20±2 SYST eV and 12.5±1.5 SYST eV, respectively. Moreover, we found that in most studied lattice directions, a bond defect complex is formed with a lower threshold than a Frenkel pair. The average threshold energy for producing either a bond defect or a Frenkel pair was found to be 24±1 STAT ±2 SYST eV

Packing defects into ordered structures

DEFF Research Database (Denmark)

Bechstein, R.; Kristoffersen, Henrik Høgh; Vilhelmsen, L.B.

2012-01-01

. With the help of density functional theory calculations we develop a complete structural model for the entire strand and demonstrate these adstructures to be more stable than an equivalent amount of bulk defects such as Ti interstitials. We argue that strands can form particularly easy on stepped surfaces......We have studied vicinal TiO2(110) surfaces by high-resolution scanning tunneling microscopy and density functional theory calculations. On TiO2 surfaces characterized by a high density of ⟨11̅ 1⟩ steps, scanning tunneling microscopy reveals a high density of oxygen-deficient strandlike adstructures...

Thermodynamic and kinetic properties of intrinsic defects and Mg transmutants in 3C–SiC determined by density functional theory

International Nuclear Information System (INIS)

Hu, Shenyang; Setyawan, Wahyu; Van Ginhoven, Renee M.; Jiang, Weilin; Henager, Charles H.; Kurtz, Richard J.

2014-01-01

Density functional theory (DFT) is used to calculate the thermodynamic and kinetic properties of transmutant Mg in 3C–SiC due to high-energy neutron irradiation associated with the fusion nuclear environment. The formation and binding energies of intrinsic defects, Mg-related defects, and clusters in 3C–SiC are systematically calculated. The minimum energy paths and activation energies during point defect migration and small cluster evolution are studied using a generalized solid-state nudged elastic band (G-SSNEB) method with DFT energy calculations. Stable defect structures and possible defect migration mechanisms are identified. The evolution of binding energies during Mg 2 Si formation demonstrates that the formation of Mg 2 Si needs to overcome a critical nucleus size and nucleation barrier. It is found that C vacancies promote the formation of the Mg 2 Si nucleus, and formation of which results in a compressive stress field around the nucleus. These data are important inputs in meso- and macro-scale modeling and experiments to understand and predict the impact of Mg on phase stability, microstructure evolution, and performance of SiC and SiC-based materials during long-term neutron exposures

Doping and defects in YBa2Cu3O7: Results from hybrid density functional theory

KAUST Repository

Schwingenschlögl, Udo

2012-06-21

Modified orbital occupation and inhomogeneous charge distribution in high-Tc oxide compounds due to doping and/or defects play a huge role for the material properties. To establish insight into the charge redistribution, we address metallic YBa2Cu3O7 in two prototypical configurations: Ca doped (hole doping) and O deficient (electron doping). By means of first principles calculations for fully relaxed structures, we evaluate the orbital occupations. We find that the change of the charge density, in particular in the CuO2 planes, shows a complex spatial pattern instead of the expected uniform (de-)population of the valence states.

Leveling coatings for reducing the atomic oxygen defect density in protected graphite fiber epoxy composites

Science.gov (United States)

Jaworske, D. A.; Degroh, Kim K.; Podojil, G.; McCollum, T.; Anzic, J.

1992-11-01

Pinholes or other defect sites in a protective oxide coating provide pathways for atomic oxygen in low Earth orbit to reach underlying material. One concept of enhancing the lifetime of materials in low Earth orbit is to apply a leveling coating to the material prior to applying any reflective and protective coatings. Using a surface tension leveling coating concept, a low viscosity epoxy was applied to the surface of several composite coupons. A protective layer of 1000 A of SiO2 was deposited on top of the leveling coating, and the coupons were exposed to an atomic oxygen environment in a plasma asher. Pinhole populations per unit area were estimated by counting the number of undercut sites observed by scanning electron microscopy. Defect density values of 180,000 defects/sq cm were reduced to about 1000 defects/sq cm as a result of the applied leveling coating. These improvements occur at a mass penalty of about 2.5 mg/sq cm.

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

Science.gov (United States)

Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

2016-05-04

Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

Electron irradiation-induced defects in {beta}-SiC

Energy Technology Data Exchange (ETDEWEB)

Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

1996-04-01

To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

Abnormal photothermal effect of laser radiation on highly defect oxide bronze nanoparticles under the sub-threshold excitation of absorption

Science.gov (United States)

Gulyaev, P.; Kotvanova, M.; Omelchenko, A.

2017-05-01

The mechanism of abnormal photo-thermal effect of laser radiation on nanoparticles of oxide bronzes has been proposed in this paper. The basic features of the observed effect are: a) sub-threshold absorption of laser radiation by the excitation of donor-like levels formed in the energy gap due to superficial defects of the oxide bronze nano-crystals; b) an interband radiationless transition of energy of excitation on deep triplet levels and c) consequent recombination occurring at the plasmon absorption. K or Na atoms thermally intercalated to the octahedral crystal structure of TiO2 in the wave SHS combustion generate acceptor levels in the gap. The prepared oxide bronzes of the non-stoichiometric composition NaxTiO2 and KxTiO2 were examined by high resolution TEM, and then grinded in a planetary mill with powerful dispersion energy density up to 4000 J/g. This made it possible to obtain nanoparticles about 50 nm with high surface defect density (1017-1019 cm-2 at a depth of 10 nm). High photo-thermal effect of laser radiation on the defect nanocrystals observed after its impregnation into cartilaginous tissue exceeds 7 times in comparison with the intact ones.

Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Gocalinska, Agnieszka, E-mail: agnieszka.gocalinska@tyndall.ie; Manganaro, Marina; Dimastrodonato, Valeria; Pelucchi, Emanuele

2015-09-15

Highlights: • Metamorphic buffer layers of In{sub x}Ga{sub 1−x}As were grown by MOVPE and characterised by AFM and TEM. • It was found that AFM provides sufficient information to estimate threading defect density in metamorphic structures, even when significant roughness is present. • When planar-view TEM is lacking, a combination of cross-sectional TEM and large scale AFM can provide good evaluation of the material quality. • It is fast, cheap and non-destructive – can be very useful in development process of complicated structures, requiring multiple test growths and characterisation. - Abstract: We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 10{sup 6}) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

Co- and defect-rich carbon nanofiber films as a highly efficient electrocatalyst for oxygen reduction

Science.gov (United States)

Kim, Il To; Song, Myeong Jun; Shin, Seoyoon; Shin, Moo Whan

2018-03-01

Many efforts are continuously devoted to developing high-efficiency, low-cost, and highly scalable oxygen reduction reaction (ORR) electrocatalysts to replace precious metal catalysts. Herein, we successfully synthesize Co- and defect-rich carbon nanofibers (CNFs) using an efficient heat treatment approach involving the pyrolysis of electrospun fibers at 370 °C under air. The heat treatment process produces Co-decorated CNFs with a high Co mass ratio, enriched pyridinic N, Co-pyridinic Nx clusters, and defect-rich carbon structures. The synergistic effects from composition and structural changes in the designed material increase the number of catalytically active sites for the ORR in an alkaline solution. The prepared Co- and defect-rich CNFs exhibit excellent ORR activities with a high ORR onset potential (0.954 V vs. RHE), a large reduction current density (4.426 mA cm-2 at 0.40 V), and a nearly four-electron pathway. The catalyst also exhibits a better long-term durability than commercial Pt/C catalysts. This study provides a novel hybrid material as an efficient ORR catalyst and important insight into the design strategy for CNF-based hybrid materials as electrochemical electrodes.

Influence of defects in SiC (0001) on epitaxial graphene

International Nuclear Information System (INIS)

Guo Yu; Guo Li-Wei; Lu Wei; Huang Jiao; Jia Yu-Ping; Sun Wei; Li Zhi-Lin; Wang Yi-Fei

2014-01-01

Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG. (rapid communication)

Annihilation momentum density of positrons trapped at vacancy-type defects in metals and alloys

International Nuclear Information System (INIS)

Bansil, A.; Prasad, R.; Benedek, R.

1988-01-01

Positron annihilation, especially the angular correlation of annihilation radiation, is a powerful tool for investigating the electronic spectra of ordered as well as defected materials. The tendency of positrons to trap at vacancy-type defects should enable this technique to study the local environment of such defects. However, we need to develop a theoretical basis for calculating the two-photon annihilation momentum density rho/sub 2gamma/(p-vector). We have recently formulated and implemented a theory of rho/sub 2gamma/(p-vector) from vacancy-type defects in metals and alloys. This article gives an outline of our approach together with a few of our results. Section 2 summarizes the basic equations for evaluating rho/sub 2gamma/(p-vector). Our Green's function-based approach is nonperturbative and employs a realistic (one-particle) muffin-tin Hamiltonian for treating electrons and positrons. Section 3 presents and discusses rho/sub 2gamma/(p-vector) results for a mono-vacancy in Cu. We have neglected the effects of electron-positron correlations and of lattice distortion around the vacancy. Section 4 comments briefly on the question of treating defects such as divacancies and metal-impurity complexes in metals and alloys. Finally, in Section 5, we remark on the form of rho/sub 2gamma/(p-vector) for a mono-vacancy in jellium. 2 figs

Topological defect and quasi-particle dynamics in charge density waves

International Nuclear Information System (INIS)

Hayashi, Masahiko; Ebisawa, Hiromichi

2010-01-01

The dynamics of topological defects (dislocations) in charge density waves (CDW's) is largely affected by the quasi-particle dynamics in the cores of the dislocations. The dislocations mediate the conversion of the electron number between condensate and quasi-particle sub-systems. This is especially important in the sliding conduction of CDW. In this work we propose a simple model, which is obtained by extending the Ginzburg-Landau theory partially taking into account the quasi-particle dynamics in the sense of two-fluid model. We perform the numerical simulation of sliding conduction of CDW based on our model. Using this model we may clarify the detailed process of dislocation nucleation and annihilation near the contacts.

Defect assessment procedures at high temperature

International Nuclear Information System (INIS)

Ainsworth, R.A.

1991-01-01

A comprehensive assessment procedure for the high-temperature response of structures is being produced. The procedure is referred to as R5 and is written as a series of step-by-step instructions in a number of volumes. This paper considers in detail those parts of R5 which address the behaviour of defects. The defect assessment procedures may be applied to defects found in service, postulated defects, or defects formed during operation as a result of creep-fatigue loading. In the last case, a method is described for deducing from endurance data the number of cycles to initiate a crack of a specified size. Under steady loading, the creep crack tip parameter C * is used to assess crack growth. Under cyclic loading, the creep crack growth during dwell periods is stiell governed by C * but crack growth due to cyclic excursions must also be included. This cyclic crack growth is described by an effective stress intensity factor range. A feature of the R5 defect assessment procedures in that they are based on simplified methods and approximate reference stress methods are described which enable C * in a component to be evaluated. It is shown by comparison with theoretical calculations and experimental data that reliable estimates of C * and the associated crack growth are obtained provided realistic creep strain rate date are used in the reference stress approximation. (orig./HP)

Scaling defect decay and the reionization history of the Universe

International Nuclear Information System (INIS)

Avelino, P.P.; Barbosa, D.

2004-01-01

We consider a model for the reionization history of the Universe in which a significant fraction of the observed optical depth is a result of direct reionization by the decay products of a scaling cosmic defect network. We show that such network can make a significant contribution to the reionization history of the Universe even if its energy density is very small (the defect energy density has to be greater than about 10 -11 of the background density). We compute the Cosmic Microwave Background temperature, polarization and temperature-polarization cross power spectrum and show that a contribution to the observed optical depth due to the decay products of a scaling defect network may help to reconcile a high optical depth with a low redshift of complete reionization suggested by quasar data. However, if the energy density of defects is approximately a constant fraction of the background density then these models do not explain the large scale bump in the temperature-polarization cross power spectrum observed by Wilkinson Microwave Anisotropy Probe

Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Powders

Science.gov (United States)

Everitt, Henry

2013-03-01

Bulk Zinc Oxide (ZnO) is a wide band gap semiconductor with an ultraviolet direct band gap energy of 3.4 eV and a broad, defect-related visible wavelength emission band centered near 2 eV. We have shown that the external quantum efficiency can exceed 50% for this nearly white emission band that closely matches the human dark-adapted visual response. To explore the potential of ZnO as a rare earth-free white light phosphor, we investigated the mechanism of efficient defect emission in three types of ZnO powders: unannealed, annealed, and sulfur-doped. Annealing and sulfur-doping of ZnO greatly increase the strength of defect emission while suppressing the UV band edge emission. Continuous wave and ultrafast one- and two-photon excitation spectroscopy are used to examine the defect emission mechanism. Low temperature photoluminescence (PL) and PL excitation (PLE) spectra were measured for all three compounds, and it was found that bound excitons mediate the defect emission. Temperature-dependent PLE spectra for the defect and band edge emission were measured to estimate trapping and activation energies of the bound excitons and clarify the role they play in the defect emission. Time-resolved techniques were used to ascertain the role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and non-radiative traps. In unannealed ZnO we find that defect emission is suppressed and UV band edge emission is inefficient (reduced, and a high density of defects responsible for the broad visible emission are created near the surface. Interestingly, nearly identical PLE spectra are found for both the band edge and the defect emission, one of many indications that the defect emission is deeply connected to bound excitons. Quantum efficiency, also measured as a function of excitation wavelength, closely mirrors the PLE spectra for both emission bands. Sulfur-doped ZnO exhibits additional PLE and X-ray features indicative of a ZnS-rich surface

Exploring atomic defects in molybdenum disulphide monolayers

KAUST Repository

Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

2015-01-01

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

Exploring atomic defects in molybdenum disulphide monolayers

KAUST Repository

Hong, Jinhua

2015-02-19

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

In-situ determination of electronic surface and volume defect density of amorphous silicon (a-Si:H) and silicon alloys

International Nuclear Information System (INIS)

Siebke, F.

1992-07-01

The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogenated silicon (a-Si:H) was measured for non oxidized undoped, B-doped and P-doped samples as well as for films with low carbon (C) and germanium (Ge) content. Also the influence of light soaking on the bulk and surface density of states was investigated. The samples were prepared by rf glow discharge in an UHV-system at substrate temperatures between 100degC and 400degC and transferred to the analysis chamber by a vacuum lock. We combined the constant photocurrent method (CPM) and the total-yield photoelectron spectroscopy (TY) to obtain in-situ information about the defect densities. While the first method yields information about the density of states in the bulk, the other method obtains the density of occupied states in the near-surface region. The mean information depth of the TY-measurements is limited by the escape lenght of photoelectrons and can be estimated to 5 nm. In addition to the defect density the position of the Fermi energy was determined for the bulk by dark conductivity measurements and at the surface using a calibrated Kelvin probe. (orig.)

Positron studies of defected metals, metallic surfaces

International Nuclear Information System (INIS)

Bansil, A.

1991-01-01

Specific problems proposed under this project included the treatment of electronic structure and momentum density in various disordered and defected systems. Since 1987, when the new high-temperature superconductors were discovered, the project focused extensively on questions concerning the electronic structure and Fermiology of high-T c superconductors, in particular, (i) momentum density and positron experiments, (ii) angle-resolved photoemission intensities, (iii) effects of disorder and substitutions in the high-T c 's

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Science.gov (United States)

Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

2010-04-01

Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

Science.gov (United States)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques

Energy Technology Data Exchange (ETDEWEB)

Koida, T. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Uedono, A. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Sota, T. [Department of Electrical, Engineering and Bioscience, Waseda University, Shinjuku 169-8555 (Japan); Kawasaki, M. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044 (Japan); Chichibu, S.F. [NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Photodynamics Research Center, RIKEN, Sendai 980-0868 (Japan)

2004-09-01

The roles of point defects and defect complexes governing nonradiative processes in ZnO epilayers were studied using time-resolved photoluminescence (PL) and slow positron annihilation measurements. The density or size of Zn vacancies (V{sub Zn}) decreased and the nonradiative PL lifetime ({tau}{sub nr}) increased with higher growth temperature for epilayers grown on a ScAlMgO{sub 4} substrate. Accordingly, the steady-state free excitonic PL intensity increased with increase in {tau}{sub nr} at room temperature. The use of a homoepitaxial substrate further decreased the V{sub Zn} concentration. However, no perfect relation between {tau}{sub nr} and the density or size of V{sub Zn} or other positron scattering centers was found. The results indicated that nonradiative recombination processes are governed not solely by single point defects, but by certain defect species introduced by the presence of V{sub Zn} such as vacancy complexes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron transport in ethanol & methanol absorbed defected graphene

Science.gov (United States)

Dandeliya, Sushmita; Srivastava, Anurag

2018-05-01

In the present paper, the sensitivity of ethanol and methanol molecules on surface of single vacancy defected graphene has been investigated using density functional theory (DFT). The changes in structural and electronic properties before and after adsorption of ethanol and methanol were analyzed and the obtained results show high adsorption energy and charge transfer. High adsorption happens at the active site with monovacancy defect on graphene surface. Present work confirms that the defected graphene increases the surface reactivity towards ethanol and methanol molecules. The presence of molecules near the active site affects the electronic and transport properties of defected graphene which makes it a promising choice for designing methanol and ethanol sensor.

Studies of defects and defect agglomerates by positron annihilation spectroscopy

DEFF Research Database (Denmark)

Eldrup, Morten Mostgaard; Singh, B.N.

1997-01-01

A brief introduction to positron annihilation spectroscopy (PAS), and in particular lo its use for defect studies in metals is given. Positrons injected into a metal may become trapped in defects such as vacancies, vacancy clusters, voids, bubbles and dislocations and subsequently annihilate from...... the trapped state iri the defect. The annihilation characteristics (e.g., the lifetime of the positron) can be measured and provide information about the nature of the defect (e.g., size, density, morphology). The technique is sensitive to both defect size (in the range from monovacancies up to cavities...

Liver mitochondrial dysfunction and electron transport chain defect induced by high dietary copper in broilers.

Science.gov (United States)

Yang, Fan; Cao, Huabin; Su, Rongsheng; Guo, Jianying; Li, Chengmei; Pan, Jiaqiang; Tang, Zhaoxin

2017-09-01

Copper is an important trace mineral in the diet of poultry due to its biological activity. However, limited information is available concerning the effects of high copper on mitochondrial dysfunction. In this study, 72 broilers were used to investigate the effects of high dietary copper on liver mitochondrial dysfunction and electron transport chain defect. Birds were fed with different concentrations [11, 110, 220, and 330 mg of copper/kg dry matter (DM)] of copper from tribasic copper chloride (TBCC). The experiment lasted for 60 d. Liver tissues on d 60 were subjected to histopathological observation. Additionally, liver mitochondrial function was recorded on d 12, 36, and 60. Moreover, a site-specific defect in the electron transport chain in liver mitochondria was also identified by using various chemical inhibitors of mitochondrial respiration. The results showed different degrees of degeneration, mitochondrial swelling, and high-density electrons in hepatocytes. In addition, the respiratory control ratio (RCR) and oxidative phosphorylation rate (OPR) in liver mitochondria increased at first and then decreased in high-dose groups. Moreover, hydrogen peroxide (H2O2) generation velocity in treated groups was higher than that in control group, which were magnified by inhibiting electron transport at Complex IV. The results indicated that high dietary copper could decline liver mitochondrial function in broilers. The presence of a site-specific defect at Complex IV in liver mitochondria may be responsible for liver mitochondrial dysfunction caused by high dietary copper. © 2017 Poultry Science Association Inc.

High-Power-Density, High-Energy-Density Fluorinated Graphene for Primary Lithium Batteries

Directory of Open Access Journals (Sweden)

Guiming Zhong

2018-03-01

Full Text Available Li/CFx is one of the highest-energy-density primary batteries; however, poor rate capability hinders its practical applications in high-power devices. Here we report a preparation of fluorinated graphene (GFx with superior performance through a direct gas fluorination method. We find that the so-called “semi-ionic” C-F bond content in all C-F bonds presents a more critical impact on rate performance of the GFx in comparison with sp2 C content in the GFx, morphology, structure, and specific surface area of the materials. The rate capability remains excellent before the semi-ionic C-F bond proportion in the GFx decreases. Thus, by optimizing semi-ionic C-F content in our GFx, we obtain the optimal x of 0.8, with which the GF0.8 exhibits a very high energy density of 1,073 Wh kg−1 and an excellent power density of 21,460 W kg−1 at a high current density of 10 A g−1. More importantly, our approach opens a new avenue to obtain fluorinated carbon with high energy densities without compromising high power densities.

Driving down defect density in composite EUV patterning film stacks

Science.gov (United States)

Meli, Luciana; Petrillo, Karen; De Silva, Anuja; Arnold, John; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex; Durrant, Danielle; Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Kawakami, Shinichiro; Matsunaga, Koichi

2017-03-01

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL. In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

High Defect Tolerance in Lead Halide Perovskite CsPbBr3.

Science.gov (United States)

Kang, Jun; Wang, Lin-Wang

2017-01-19

The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr 3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr 3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr 3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

Quantification of Valleys of Randomly Textured Substrates as a Function of Opening Angle: Correlation to the Defect Density in Intrinsic nc-Si:H.

Science.gov (United States)

Kim, Do Yun; Hänni, Simon; Schüttauf, Jan-Willem; van Swaaij, René A C M M; Zeman, Miro

2016-08-17

Optical and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells are strongly influenced by the morphology of underlying substrates. By texturing the substrates, the photogenerated current of nc-Si:H solar cells can increase due to enhanced light scattering. These textured substrates are, however, often incompatible with defect-less nc-Si:H growth resulting in lower Voc and FF. In this study we investigate the correlation between the substrate morphology, the nc-Si:H solar-cell performance, and the defect density in the intrinsic layer of the solar cells (i-nc-Si:H). Statistical surface parameters representing the substrate morphology do not show a strong correlation with the solar-cell parameters. Thus, we first quantify the line density of potentially defective valleys of randomly textured ZnO substrates where the opening angle is smaller than 130° (ρdrops. It is also observed that ρdefect increases following a power law dependence of ρ<130. This result is attributed to more frequently formed defective regions for substrates having higher ρ<130.

Topological defects control collective dynamics in neural progenitor cell cultures

Science.gov (United States)

Kawaguchi, Kyogo; Kageyama, Ryoichiro; Sano, Masaki

2017-04-01

Cultured stem cells have become a standard platform not only for regenerative medicine and developmental biology but also for biophysical studies. Yet, the characterization of cultured stem cells at the level of morphology and of the macroscopic patterns resulting from cell-to-cell interactions remains largely qualitative. Here we report on the collective dynamics of cultured murine neural progenitor cells (NPCs), which are multipotent stem cells that give rise to cells in the central nervous system. At low densities, NPCs moved randomly in an amoeba-like fashion. However, NPCs at high density elongated and aligned their shapes with one another, gliding at relatively high velocities. Although the direction of motion of individual cells reversed stochastically along the axes of alignment, the cells were capable of forming an aligned pattern up to length scales similar to that of the migratory stream observed in the adult brain. The two-dimensional order of alignment within the culture showed a liquid-crystalline pattern containing interspersed topological defects with winding numbers of +1/2 and -1/2 (half-integer due to the nematic feature that arises from the head-tail symmetry of cell-to-cell interaction). We identified rapid cell accumulation at +1/2 defects and the formation of three-dimensional mounds. Imaging at the single-cell level around the defects allowed us to quantify the velocity field and the evolving cell density; cells not only concentrate at +1/2 defects, but also escape from -1/2 defects. We propose a generic mechanism for the instability in cell density around the defects that arises from the interplay between the anisotropic friction and the active force field.

Defect structures in MgB2 wires introduced by hot isostatic pressing

International Nuclear Information System (INIS)

Liao, X Z; Serquis, A; Zhu, Y T; Civale, L; Hammon, D L; Peterson, D E; Mueller, F M; Nesterenko, V F; Gu, Y

2003-01-01

The microstructures of MgB 2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. A large amount of crystalline defects including small-angle twisting, tilting and bending boundaries, in which high densities of dislocations reside, was found forming sub-grains within MgB 2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centres that contribute to the high critical current densities of the wires at high temperatures and at high fields

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Non destructive defect detection by spectral density analysis.

Science.gov (United States)

Krejcar, Ondrej; Frischer, Robert

2011-01-01

The potential nondestructive diagnostics of solid objects is discussed in this article. The whole process is accomplished by consecutive steps involving software analysis of the vibration power spectrum (eventually acoustic emissions) created during the normal operation of the diagnosed device or under unexpected situations. Another option is to create an artificial pulse, which can help us to determine the actual state of the diagnosed device. The main idea of this method is based on the analysis of the current power spectrum density of the received signal and its postprocessing in the Matlab environment with a following sample comparison in the Statistica software environment. The last step, which is comparison of samples, is the most important, because it is possible to determine the status of the examined object at a given time. Nowadays samples are compared only visually, but this method can't produce good results. Further the presented filter can choose relevant data from a huge group of data, which originate from applying FFT (Fast Fourier Transform). On the other hand, using this approach they can be subjected to analysis with the assistance of a neural network. If correct and high-quality starting data are provided to the initial network, we are able to analyze other samples and state in which condition a certain object is. The success rate of this approximation, based on our testing of the solution, is now 85.7%. With further improvement of the filter, it could be even greater. Finally it is possible to detect defective conditions or upcoming limiting states of examined objects/materials by using only one device which contains HW and SW parts. This kind of detection can provide significant financial savings in certain cases (such as continuous casting of iron where it could save hundreds of thousands of USD).

Influence of relaxation processes on the evaluation of the metastable defect density in Cu(In,Ga)Se{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Maciaszek, M.; Zabierowski, P. [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, Warszawa 00 662 (Poland)

2016-06-07

In this contribution, we investigated by means of numerical simulations the influence of relaxation processes related to metastable defects on electrical characteristics of Cu(In,Ga)Se{sub 2}. In particular, we analyzed the relaxation of a metastable state induced by illumination at a fixed temperature as well as the dependence of the hole concentration on the temperature during cooling. The knowledge of these two relaxation processes is crucial in the evaluation of the hole concentration in the relaxed state and after light soaking. We have shown that the distribution of the metastable defects can be considered frozen below 200 K. The hole capture cross section was estimated as ∼3 × 10{sup −15} cm{sup 2}. It was shown that the usually used cooling rates may lead to relevant changes of the hole concentration. We calculated the lower limit of the hole concentration after cooling, and we presented how it depends on densities of shallow acceptors and metastable defects. Moreover, we proposed a method which allows for the evaluation of shallow acceptor and metastable defect densities from two capacitance-voltage profiles measured in the relaxed and light soaking states. Finally, we indicated experimental conditions in which the influence of relaxation processes on the accuracy of this method is the smallest.

Modeling defect production in high energy collision cascades

International Nuclear Information System (INIS)

Heinisch, H.L.; Singh, B.N.

1993-01-01

A multi-model approach roach (MMA) to simulating defect production processes at the atomic scale is described that incorporates molecular dynamics (MD), binary collision approximation (BCA) calculations and stochastic annealing simulations. The central hypothesis of the MMA is that the simple, fast computer codes capable of simulating large numbers of high energy cascades (e.g., BCA codes) can be made to yield the correct defect configurations when their parameters are calibrated using the results of the more physically realistic MD simulations. The calibration procedure is investigated using results of MD simulations of 25 keV cascades in copper. The configurations of point defects are extracted from the MD cascade simulations at the end of the collisional phase, similar to the information obtained with a binary collision model. The MD collisional phase defect configurations are used as input to the ALSOME annealing simulation code, and values of the ALSOME quenching parameters are determined that yield the best fit to the post-quenching defect configurations of the MD simulations

Selected topics in high temperature chemistry defect chemistry of solids

CERN Document Server

Johannesen, Ø

2013-01-01

The properties of materials at high temperature play a vital role in their processing and practical use. The real properties of materials at elevated temperatures are very often governed by defects in their structure. Lattice defects may consist of point defects like vacancies, interstitial atoms or substituted atoms. These classes are discussed in general and specifically for oxides, nitrides, carbides and sulfides. Defect aggregates, shear structures and adaptive structures are also described. Special attention is paid to hydrogen defects which seem to play an important role in several mater

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

In situ probing of the evolution of irradiation-induced defects in copper

International Nuclear Information System (INIS)

Li, N.; Hattar, K.; Misra, A.

2013-01-01

Through in situ Cu 3+ ion irradiation at room temperature in a transmission electron microscope (TEM), we have investigated the evolution of defect clusters as a function of the radiation dose at different distances from the 3 {1 1 2} incoherent twin boundary (ITB) in Cu. Post in situ ion irradiation, high resolution TEM was used to explore the types of defects, which are composed of a high-density of vacancy stacking fault tetrahedra (SFT) and sparsely distributed interstitial Frank loops. During irradiation, defect clusters evolve through four stages: (i) incubation, (ii) non-interaction, (iii) interaction and (iv) saturation; and the corresponding density was observed to initially increase with irradiation dose and then approach saturation. No obvious denuded zone is observed along the 3 {1 1 2} ITB and the configuration of defects at the boundary displays as truncated SFTs. Several defect evolution models have been proposed to explain the observed phenomena

Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Yagyuda, H.; Tamegai, T.; Okayasu, S.; Sasase, M.; Kitamura, H.; Murakami, T.

2010-01-01

We report the formation of columnar defects in Co-doped BaFe 2 As 2 single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe 2 As 2 and cuprate superconductors.

Surface Oxidation of the High-Strength Steels Electrodeposited with Cu or Fe and the Resultant Defect Formation in Their Coating during the Following Galvanizing and Galvannealing Processes

Science.gov (United States)

Choi, Yun-Il; Beom, Won-Jin; Park, Chan-Jin; Paik, Doojin; Hong, Moon-Hi

2010-12-01

This study examined the surface oxidation of high-strength steels electrodeposited with Cu or Fe and the resultant defect formation in their coating during the following galvanizing and galvannealing processes. The high-strength steels were coated with an Cu or Fe layer by the electroplating method. Then, the coated steels were annealed in a reducing atmosphere, dipped in a molten zinc, and finally transformed into galvannealed steels through the galvannealing process. The formation of Si and Mn oxides on the surface of the high-strength steel was effectively suppressed, and the density of surface defects on the galvanized steel was significantly reduced by the pre-electrodeposition of Cu and Fe. This effect was more prominent for the steels electrodeposited at higher cathodic current densities. The finer electrodeposit layer formed at higher cathodic current density on the steels enabled the suppression of partial surface oxidation by Mn or Si and better wetting of Zn on the surface of the steels in the following galvanizing process. Furthermore, the pre-electrodeposited steels exhibited a smoother surface without surface cracks after the galvannealing process compared with the untreated steel. The diffusion of Fe and Zn in the Zn coating layer in the pre-electrodeposited steels appears to occur more uniformly during the galvannealing process due to the low density of surface defects induced by oxides.

Adsorption of gas molecules on armchair AlN nanoribbons with a dangling bond defect by using density functional theory

International Nuclear Information System (INIS)

Sun, Guodong; Zhao, Peng; Zhang, Wenxue; Li, Hui; He, Cheng

2017-01-01

In this paper, the adsorption of gas molecules (CO, NO, O_2, CO_2, and NO_2) on armchair aluminum nitride nanoribbons (AAlNNRs) with a dangling bond defect has been investigated by density functional theory. For all the studied systems, the adsorption geometries, adsorption energies, charge transfer, and electronic structures are discussed. The adsorption energies of O_2, NO_2, and CO_2 are -1.53, -2.24, and -2.88 eV, respectively, corresponding to strong chemisorption. While for CO and NO, the adsorptions are between weak chemisorption and strong physisorption. Moreover, the magnetic property of defective AAlNNR are sensitive to the adsorption of NO_2. Therefore, based on the obtained results, AAlNNRs with a dangling bond defect is promising for using in gas sensor devices to detect NO_2. - Highlights: • The adsorption properties of gas molecules on defective AAlNNRs are performed by DFT. • The adsorption of O_2, NO_2, and CO_2 on defective AAlNNRs are strong chemisorption. • The magnetic property of defective AAlNNRs are sensitive to the adsorption of NO_2. • The defective AAlNNRs is promising in gas sensor devices to detect and capture NO_2.

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Iandolo, Donata; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Linköping University, SE-601 74 Norrköping (Sweden); Pozina, Galia; Khranovskyy, Volodymyr; Liu, Xianjie [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

2016-04-28

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (∼575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.

Thermodynamic and kinetic properties of hydrogen defect pairs in SrTiO3 from density functional theory

DEFF Research Database (Denmark)

Bork, Nicolai Christian; Bonanos, Nikolaos; Rossmeisl, Jan

2011-01-01

A density functional theory investigation of the thermodynamic and kinetic properties of hydrogen–hydrogen defect interactions in the cubic SrTiO3 perovskite is presented. We find a net attraction between two hydrogen atoms with an optimal separation of ∼2.3 Å. The energy gain is ca. 0.33 eV comp...

Ab initio study of point defects in magnesium oxide

International Nuclear Information System (INIS)

Gilbert, C. A.; Kenny, S. D.; Smith, R.; Sanville, E.

2007-01-01

Energetics of a variety of point defects in MgO have been considered from an ab initio perspective using density functional theory. The considered defects are isolated Schottky and Frenkel defects and interstitial pairs, along with a number of Schottky defects and di-interstitials. Comparisons were made between the density functional theory results and results obtained from empirical potential simulations and these generally showed good agreement. Both methodologies predicted the first nearest neighbor Schottky defects to be the most energetically favorable of the considered Schottky defects and that the first, second, and fifth nearest neighbor di-interstitials were of similar energy and were favored over the other di-interstitial configurations. Relaxed structures of the defects were analyzed, which showed that empirical potential simulations were accurately predicting the displacements of atoms surrounding di-interstitials, but were overestimating O atom displacement for Schottky defects. Transition barriers were computed for the defects using the nudged elastic band method. Vacancies and Schottky defects were found to have relatively high energy barriers, the majority of which were over 2 eV, in agreement with conclusions reached using empirical potentials. The lowest barriers for di-interstitial transitions were found to be for migration into a first nearest neighbor configuration. Charges were calculated using a Bader analysis and this found negligible charge transfer during the defect transitions and only small changes in the charges on atoms surrounding defects, indicating why fixed charge models work as well as they do

Defect testing of large aperture optics based on high resolution CCD camera

International Nuclear Information System (INIS)

Cheng Xiaofeng; Xu Xu; Zhang Lin; He Qun; Yuan Xiaodong; Jiang Xiaodong; Zheng Wanguo

2009-01-01

A fast testing method on inspecting defects of large aperture optics was introduced. With uniform illumination by LED source at grazing incidence, the image of defects on the surface of and inside the large aperture optics could be enlarged due to scattering. The images of defects were got by high resolution CCD camera and microscope, and the approximate mathematical relation between viewing dimension and real dimension of defects was simulated. Thus the approximate real dimension and location of all defects could be calculated through the high resolution pictures. (authors)

Formation of topological defects

International Nuclear Information System (INIS)

Vachaspati, T.

1991-01-01

We consider the formation of point and line topological defects (monopoles and strings) from a general point of view by allowing the probability of formation of a defect to vary. To investigate the statistical properties of the defects at formation we give qualitative arguments that are independent of any particular model in which such defects occur. These arguments are substantiated by numerical results in the case of strings and for monopoles in two dimensions. We find that the network of strings at formation undergoes a transition at a certain critical density below which there are no infinite strings and the closed-string (loop) distribution is exponentially suppressed at large lengths. The results are contrasted with the results of statistical arguments applied to a box of strings in dynamical equilibrium. We argue that if point defects were to form with smaller probability, the distance between monopoles and antimonopoles would decrease while the monopole-to-monopole distance would increase. We find that monopoles are always paired with antimonopoles but the pairing becomes clean only when the number density of defects is small. A similar reasoning would also apply to other defects

Biomass-derived nitrogen-doped porous carbons with tailored hierarchical porosity and high specific surface area for high energy and power density supercapacitors

Science.gov (United States)

Sun, Junting; Niu, Jin; Liu, Mengyue; Ji, Jing; Dou, Meiling; Wang, Feng

2018-01-01

Porous carbon materials with hierarchical structures attract intense interest for the development of high-performance supercapacitors. Herein, we demonstrate a facile and efficient strategy to synthesize nitrogen-doped hierarchically porous carbons with tailored porous structure combined with high specific surface area (SSA), which involves a pre-carbonization and a subsequent carbonization combined with KOH activation of silkworm cocoon precursors. Through adjusting the mass ratio of the activator (KOH) to pre-carbonized precursor in the activation process, the hierarchically porous carbon prepared at the mass ratio of 2 (referred to as NHPC-2) possesses a high defect density and a high SSA of 3386 m2 g-1 as well as the relatively high volumetric proportion of mesopores and macropores (45.5%). As a result, the energy density and power density of the symmetric supercapacitor based on NHPC-2 electrode are as high as 34.41 Wh kg-1 and 31.25 kW kg-1 in organic-solvent electrolyte, and are further improved to 112.1 Wh kg-1 and 23.91 kW kg-1 in ionic-liquid electrolyte.

Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

Energy Technology Data Exchange (ETDEWEB)

Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

2011-10-15

Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

Fracture mechanical evaluation of high temperature structure and creep-fatigue defect assessment

Energy Technology Data Exchange (ETDEWEB)

Park, Chang Gyu; Kim, Jong Bum; Lee, Jae Han

2004-02-01

This study proposed the evaluation procedure of high temperature structures from the viewpoint of fracture mechanics on the cylindrical structure applicable to the KALIMER, which is developed by KAERI. For the evaluation of structural integrity, linear and non-linear fracture mechanics parameters were analyzed. Parameters used in creep defect growth applicable to high temperature structure of liquid metal reactor and the evaluation codes with these parameters were analyzed. The evaluation methods of defect initiation and defect growth which were established in R5/R6 code(UK), JNC method (Japan) and RCC-MR A16(France) code were analyzed respectively. The evaluation procedure of leak before break applicable to KALIMER was preliminarily developed and proposed. As an application example of defect growth, the creep-fatigue defect growth on circumferential throughwall defect in high temperature cylindrical structure was evaluated by RCC-MR A16 and this application technology was established.

Hardening in AlN induced by point defects

International Nuclear Information System (INIS)

Suematsu, H.; Mitchell, T.E.; Iseki, T.; Yano, T.

1991-01-01

Pressureless-sintered AIN was neutron irradiated and the hardness change was examined by Vickers indentation. The hardness was increased by irradiation. When the samples were annealed at high temperature, the hardness gradually decreased. Length was also found to increase and to change in the same way as the hardness. A considerable density of dislocation loops still remained, even after the hardness completely recovered to the value of the unirradiated sample. Thus, it is concluded that the hardening in AIN is caused by isolated point defects and small clusters of point defects, rather than by dislocation loops. Hardness was found to increase in proportion to the length change. If the length change is assumed to be proportional to the point defect density, then the curve could be fitted qualitatively to that predicted by models of solution hardening in metals. Furthermore, the curves for three samples irradiated at different temperatures and fluences are identical. There should be different kinds of defect clusters in samples irradiated at different conditions, e.g., the fraction of single point defects is the highest in the sample irradiated at the lowest temperature. Thus, hardening is insensitive to the kind of defects remaining in the sample and is influenced only by those which contribute to length change

Time-dependent broken-symmetry density functional theory simulation of the optical response of entangled paramagnetic defects: Color centers in lithium fluoride

Science.gov (United States)

Janesko, Benjamin G.

2018-02-01

Parameter-free atomistic simulations of entangled solid-state paramagnetic defects may aid in the rational design of devices for quantum information science. This work applies time-dependent density functional theory (TDDFT) embedded-cluster simulations to a prototype entangled-defect system, namely two adjacent singlet-coupled F color centers in lithium fluoride. TDDFT calculations accurately reproduce the experimental visible absorption of both isolated and coupled F centers. The most accurate results are obtained by combining spin symmetry breaking to simulate strong correlation, a large fraction of exact (Hartree-Fock-like) exchange to minimize the defect electrons' self-interaction error, and a standard semilocal approximation for dynamical correlations between the defect electrons and the surrounding ionic lattice. These results motivate application of two-reference correlated ab initio approximations to the M-center, and application of TDDFT in parameter-free simulations of more complex entangled paramagnetic defect architectures.

Defect engineering of the electrochemical characteristics of carbon nanotube varieties

International Nuclear Information System (INIS)

Hoefer, Mark A.; Bandaru, Prabhakar R.

2010-01-01

The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multiwalled CNT morphologies. The controlled addition of argon ions was used for varying the charge and type of extrinsic defects. It was indicated from Raman spectroscopy and voltammetry that the electrocatalytic response of hollow type CNTs could be tailored more significantly, compared to bamboo type CNTs which have innately high reactive site densities and are less amenable to modification. An in-plane correlation length parameter was used to understand the variation of the defect density as a function of argon ion irradiation. The work has implications in the design of nanotube based chemical sensors, facilitated through the introduction of suitable reactive sites.

Defect engineering of the electrochemical characteristics of carbon nanotube varieties

Science.gov (United States)

Hoefer, Mark A.; Bandaru, Prabhakar R.

2010-08-01

The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multiwalled CNT morphologies. The controlled addition of argon ions was used for varying the charge and type of extrinsic defects. It was indicated from Raman spectroscopy and voltammetry that the electrocatalytic response of hollow type CNTs could be tailored more significantly, compared to bamboo type CNTs which have innately high reactive site densities and are less amenable to modification. An in-plane correlation length parameter was used to understand the variation of the defect density as a function of argon ion irradiation. The work has implications in the design of nanotube based chemical sensors, facilitated through the introduction of suitable reactive sites.

Correlating defect density with growth time in continuous graphene films.

Science.gov (United States)

Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

2014-12-01

We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

Change in physical properties of high density isotropic graphites irradiated in the ?JOYO? fast reactor

Science.gov (United States)

Maruyama, T.; Kaito, T.; Onose, S.; Shibahara, I.

1995-08-01

Thirteen kinds of isotropic graphites with different density and maximum grain size were irradiated in the experimental fast reactor "JOYO" to fluences from 2.11 to 2.86 × 10 26 n/m 2 ( E > 0.1 MeV) at temperatures from 549 to 597°C. Postirradiation examination was carried out on the dimensional changes, elastic modulus, and thermal conductivity of these materials. Dimensional change results indicate that the graphites irradiated at lower fluences showed shrinkage upon neutron irradiation followed by increase with increasing neutron fluences, irrespective of differences in material parameters. The Young's modulus and Poisson's ratio increased by two to three times the unirradiated values. The large scatter found in Poisson's ratio of unirradiated materials became very small and a linear dependence on density was obtained after irradiation. The thermal conductivity decreased to one-fifth to one-tenth of unirradiated values, with a negligible change in specific heat. The results of postirradiation examination indicated that the changes in physical properties of high density, isotropic graphites were mainly dominated by the irradiation condition rather than their material parameters. Namely, the effects of irradiation induced defects on physical properties of heavily neutron-irradiated graphites are much larger than that of defects associated with as-fabricated specimens.

Change in physical properties of high density isotropic graphites irradiated in the ''JOYO'' fast reactor

International Nuclear Information System (INIS)

Maruyama, T.; Kaito, T.; Onose, S.; Shibahara, I.

1995-01-01

Thirteen kinds of isotropic graphites with different density and maximum grain size were irradiated in the experimental fast reactor ''JOYO'' to fluences from 2.11 to 2.86x10 26 n/m 2 (E>0.1 MeV) at temperatures from 549 to 597 C. Postirradiation examination was carried out on the dimensional changes, elastic modulus, and thermal conductivity of these materials. Dimensional change results indicate that the graphites irradiated at lower fluences showed shrinkage upon neutron irradiation followed by increase with increasing neutron fluences, irrespective of differences in material parameters. The Young's modulus and Poisson's ratio increased by two to three times the unirradiated values. The large scatter found in Poisson's ratio of unirradiated materials became very small and a linear dependence on density was obtained after irradiation. The thermal conductivity decreased to one-fifth to one-tenth of unirradiated values, with a negligible change in specific heat. The results of postirradiation examination indicated that the changes in physical properties of high density, isotropic graphites were mainly dominated by the irradiation condition rather than their material parameters. Namely, the effects of irradiation induced defects on physical properties of heavily neutron-irradiated graphites are much larger than that of defects associated with as-fabricated specimens. (orig.)

Defect cascades produced by neutron irradiation in YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Frischherz, M.C.; Kirk, M.A.; Farmer, J.; Greenwood, L.R.; Weber, H.W.

1992-12-01

The defect cascades produced by fast neutron irradiation of YBa 2 Cu 3 O 7-δ single crystals were studied by transmission electron microscopy. The visible defects were found to have sizes between 1 and 5 nm. Defect densities were obtained as a function of neutron fluence between 2 and 8 x 10 21 m -2 (E>0.1 MeV) and compared to damage calculations. The measured defect density was found to scale linearly with fluence and to be 1 x 10 22 m -3 at 2 x 10 21 m -2 . The defect stability was studied at room temperature and through annealing to 400 degrees C. The high fluence regime (∼10 22 m -2 ) was investigated as well

The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

International Nuclear Information System (INIS)

Chen, Pei-Yun; Chen, C.C.; Harmon, Julie P.; Lee, Sanboh

2014-01-01

This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime

The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Chen, Pei-Yun [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chen, C.C. [Institute of Nuclear Energy Research, Longtan, Taoyuan 325, Taiwan (China); Harmon, Julie P. [Department of Chemistry, University of South Florida, Tampa, FL 33620 (United States); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

2014-08-01

This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime.

Dependence of the electrical properties of defective single-walled carbon nanotubes on the vacancy density

International Nuclear Information System (INIS)

Luo Yu-Pin; Tien Li-Gan; Tsai Chuen-Horng; Lee Ming-Hsien; Li Feng-Yin

2011-01-01

The relationship between the electric properties and the vacancy density in single-walled carbon nanotubes has been investigated from first principles as well as the dependence of the influencing range of a vacancy in the nanotube on the nanotube chirality. Compared with the long-range interaction of the vacancies in a single-walled carbon nanotube with non-zero chiral angle, a much shorter interaction was found between vacancies in a zigzag single-walled carbon nanotube. In this study, we investigated the bandstructure fluctuations caused by the nanotube strain, which depends on both the vacancy density and the tube chirality. These theoretical results provide new insight to understand the relationship between the local deformation of a defective single-walled carbon nanotube and its measurable electronic properties. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Oxygen defects in Fe-substituted Tl-system superconductors

Institute of Scientific and Technical Information of China (English)

李阳; 曹国辉; 王耘波; 马庆珠; 熊小涛; 陈宁; 马如璋; 郭应焕; 许祝安; 王劲松; 张小俊; 焦正宽; 彭获田; 周思海

1996-01-01

For Fe-doped T1-1223 phase,the excess oxygen defects induced by Fe dopants are studied by means of Hall coefficient,thermogravimetric measurements,Mossbauer spectroscopy,and the model calculation of the effective bond valence.The extra oxygen defects have effects on carrier density and microstructure of the superconductors.In the light doping level of Fe (x=0-0.05),the superconducting transition and carrier density have significant corresponding relation--the zero resistance temperature Tco and carrier densities decrease linearly with Fe dopants increasing.The thermogravimetric measurements show that the Fe3+ ions’ substituting for Cu2+ ions can bring the extra oxygen into the lattice to form extra oxygen defects.The calculation of the effective bond valence shows that the decrease of carrier density originates the strongly localized binding of the extra oxygen defects.The distortion of Cu-O layer induced by the extra oxygen defects decreases the superconductive transition temperature.The microstructure

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Science.gov (United States)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

Energy Technology Data Exchange (ETDEWEB)

Jaleh, B. [Physics Department, Bu- Alisina University, Hamadan (Iran, Islamic Republic of); Parvin, P. [Physics Department, Amirkabir University, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of) and Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of) ]. E-mail: parvin@aut.ac.ir; Katoozi, M. [National Radiation Protection Department, AEOI, Tehran (Iran, Islamic Republic of); Zamani, Z. [Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of); Zare, A. [Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of)

2005-11-15

The ArF or KrF excimer laser exposure on the polycarbonate (PC) with corresponding doses higher than {phi}{sub th}5.2J/cm{sup 2}, at 32mJ/cm{sup 2} fluence per pulse and 5Hz pulse repetition rate (PRR), induces regular defects leading to self assembled defect structure following electrochemical etching (ECE). We have observed the conical-like structure for {phi}>{phi}{sub th}, whereas the polymer experiences hardening effect due to crosslinking when {phi}<{phi}{sub th}. Subsequently, conical-like, structure turns into track-like pits developing under ECE multiple treeing. Self assembled defect structure may be seen by naked eye as white spots, despite SEM illustrates a type of periodic pit formation-morphology. The exact explanation of the effect is not well understood yet. It looks like alpha tracks in the polymer surface, however the PC pieces were simply treated by excimer lasers at high doses, and they have not been exposed to the nuclear particles afterwards. We could not observe those effects at 308nm (XeCl laser) or longer wavelengths at 351nm (XeF laser) where UV photoablation does not occur. It indicates that UV ablation establishes surface degradation at shorter wavelengths, leading to laser micro etching. The mean track (defect) density is about one order of magnitude greater than the normal alpha tracks. Increasing UV doses, polymer undergoes a plateau, corresponding to etched defect saturation on PC.

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

International Nuclear Information System (INIS)

Jaleh, B.; Parvin, P.; Katoozi, M.; Zamani, Z.; Zare, A.

2005-01-01

The ArF or KrF excimer laser exposure on the polycarbonate (PC) with corresponding doses higher than φ th 5.2J/cm 2 , at 32mJ/cm 2 fluence per pulse and 5Hz pulse repetition rate (PRR), induces regular defects leading to self assembled defect structure following electrochemical etching (ECE). We have observed the conical-like structure for φ>φ th , whereas the polymer experiences hardening effect due to crosslinking when φ th . Subsequently, conical-like, structure turns into track-like pits developing under ECE multiple treeing. Self assembled defect structure may be seen by naked eye as white spots, despite SEM illustrates a type of periodic pit formation-morphology. The exact explanation of the effect is not well understood yet. It looks like alpha tracks in the polymer surface, however the PC pieces were simply treated by excimer lasers at high doses, and they have not been exposed to the nuclear particles afterwards. We could not observe those effects at 308nm (XeCl laser) or longer wavelengths at 351nm (XeF laser) where UV photoablation does not occur. It indicates that UV ablation establishes surface degradation at shorter wavelengths, leading to laser micro etching. The mean track (defect) density is about one order of magnitude greater than the normal alpha tracks. Increasing UV doses, polymer undergoes a plateau, corresponding to etched defect saturation on PC

Study on on-machine defects measuring system on high power laser optical elements

Science.gov (United States)

Luo, Chi; Shi, Feng; Lin, Zhifan; Zhang, Tong; Wang, Guilin

2017-10-01

The influence of surface defects on high power laser optical elements will cause some harm to the performances of imaging system, including the energy consumption and the damage of film layer. To further increase surface defects on high power laser optical element, on-machine defects measuring system was investigated. Firstly, the selection and design are completed by the working condition analysis of the on-machine defects detection system. By designing on processing algorithms to realize the classification recognition and evaluation of surface defects. The calibration experiment of the scratch was done by using the self-made standard alignment plate. Finally, the detection and evaluation of surface defects of large diameter semi-cylindrical silicon mirror are realized. The calibration results show that the size deviation is less than 4% that meet the precision requirement of the detection of the defects. Through the detection of images the on-machine defects detection system can realize the accurate identification of surface defects.

Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

International Nuclear Information System (INIS)

Tibermacine, T.; Ledra, M.; Ouhabab, N.; Merazga, A.

2015-01-01

The constant photocurrent method in the ac-mode (ac-CPM) is used to determine the defect density of states (DOS) in hydrogenated microcrystalline silicon (μc-Si:H) prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD). The absorption coefficient spectrum (ac-α(hv)), is measured under ac-CPM conditions at 60 Hz. The measured ac-α(hv) is converted by the CPM spectroscopy into a DOS distribution covering a portion in the lower energy range of occupied states. We have found that the density of valence band-tail states falls exponentially towards the gap with a typical band-tail width of 63 meV. Independently, computer simulations of the ac-CPM are developed using a DOS model that is consistent with the measured ac-α(hv) in the present work and a previously measured transient photocurrent (TPC) for the same material. The DOS distribution model suggested by the measurements in the lower and in the upper part of the energy-gap, as well as by the numerical modelling in the middle part of the energy-gap, coincide reasonably well with the real DOS distribution in hydrogenated microcrystalline silicon because the computed ac-α(hv) is found to agree satisfactorily with the measured ac-α(hv). (paper)

Density functional theory study of atomic and electronic properties of defects in reduced anatase TiO2 nanocrystals

Science.gov (United States)

Morita, Kazuki; Yasuoka, Kenji

2018-03-01

Anatase TiO2 nanocrystals have received considerable attention owing to their promising applications in photocatalysis, photovoltaics, and fuel cells. Although experimental evidence has shown that the performance of nanocrystals can be significantly improved through reduction, the mechanistic basis of this enhancement remains unclear. To shed a light on the chemistry of reduced anatase TiO2 nanocrystals, density functional theory were used to investigate the properties of defects and excess electrons. We demonstrated that oxygen vacancies are stable both on the surface and at the sub-surface of the nanocrystal, while titanium interstitials prefer sub-surface sites. Different defect locations possessed different excess electron structures, which contributed to deep and shallow states in the band gap of the nanocrystals. Furthermore, valence band tailing was observed, resulting in band gap narrowing. The theoretical results presented here deepen our understanding, and show the potential of defects to considerably change the macroscopic properties of anatase TiO2 nanocrystals.

Density functional theory study of atomic and electronic properties of defects in reduced anatase TiO2 nanocrystals

Directory of Open Access Journals (Sweden)

Kazuki Morita

2018-03-01

Full Text Available Anatase TiO2 nanocrystals have received considerable attention owing to their promising applications in photocatalysis, photovoltaics, and fuel cells. Although experimental evidence has shown that the performance of nanocrystals can be significantly improved through reduction, the mechanistic basis of this enhancement remains unclear. To shed a light on the chemistry of reduced anatase TiO2 nanocrystals, density functional theory were used to investigate the properties of defects and excess electrons. We demonstrated that oxygen vacancies are stable both on the surface and at the sub-surface of the nanocrystal, while titanium interstitials prefer sub-surface sites. Different defect locations possessed different excess electron structures, which contributed to deep and shallow states in the band gap of the nanocrystals. Furthermore, valence band tailing was observed, resulting in band gap narrowing. The theoretical results presented here deepen our understanding, and show the potential of defects to considerably change the macroscopic properties of anatase TiO2 nanocrystals.

Application of High-Density Electropulsing to Improve the Performance of Metallic Materials: Mechanisms, Microstructure and Properties

Science.gov (United States)

Sheng, Yinying; Hua, Youlu; Zhao, Xueyang; Chen, Lianxi; Zhou, Hanyu; Wang, James; Berndt, Christopher C.; Li, Wei

2018-01-01

The technology of high-density electropulsing has been applied to increase the performance of metallic materials since the 1990s and has shown significant advantages over traditional heat treatment in many aspects. However, the microstructure changes in electropulsing treatment (EPT) metals and alloys have not been fully explored, and the effects vary significantly on different material. When high-density electrical pulses are applied to metals and alloys, the input of electric energy and thermal energy generally leads to structural rearrangements, such as dynamic recrystallization, dislocation movements and grain refinement. The enhanced mechanical properties of the metals and alloys after high-density electropulsing treatment are reflected by the significant improvement of elongation. As a result, this technology holds great promise in improving the deformation limit and repairing cracks and defects in the plastic processing of metals. This review summarizes the effect of high-density electropulsing treatment on microstructural properties and, thus, the enhancement in mechanical strength, hardness and corrosion performance of metallic materials. It is noteworthy that the change of some properties can be related to the structure state before EPT (quenched, annealed, deformed or others). The mechanisms for the microstructural evolution, grain refinement and formation of oriented microstructures of different metals and alloys are presented. Future research trends of high-density electrical pulse technology for specific metals and alloys are highlighted. PMID:29364844

Application of High-Density Electropulsing to Improve the Performance of Metallic Materials: Mechanisms, Microstructure and Properties

Directory of Open Access Journals (Sweden)

Yinying Sheng

2018-01-01

Full Text Available The technology of high-density electropulsing has been applied to increase the performance of metallic materials since the 1990s and has shown significant advantages over traditional heat treatment in many aspects. However, the microstructure changes in electropulsing treatment (EPT metals and alloys have not been fully explored, and the effects vary significantly on different material. When high-density electrical pulses are applied to metals and alloys, the input of electric energy and thermal energy generally leads to structural rearrangements, such as dynamic recrystallization, dislocation movements and grain refinement. The enhanced mechanical properties of the metals and alloys after high-density electropulsing treatment are reflected by the significant improvement of elongation. As a result, this technology holds great promise in improving the deformation limit and repairing cracks and defects in the plastic processing of metals. This review summarizes the effect of high-density electropulsing treatment on microstructural properties and, thus, the enhancement in mechanical strength, hardness and corrosion performance of metallic materials. It is noteworthy that the change of some properties can be related to the structure state before EPT (quenched, annealed, deformed or others. The mechanisms for the microstructural evolution, grain refinement and formation of oriented microstructures of different metals and alloys are presented. Future research trends of high-density electrical pulse technology for specific metals and alloys are highlighted.

Application of High-Density Electropulsing to Improve the Performance of Metallic Materials: Mechanisms, Microstructure and Properties.

Science.gov (United States)

Sheng, Yinying; Hua, Youlu; Wang, Xiaojian; Zhao, Xueyang; Chen, Lianxi; Zhou, Hanyu; Wang, James; Berndt, Christopher C; Li, Wei

2018-01-24

The technology of high-density electropulsing has been applied to increase the performance of metallic materials since the 1990s and has shown significant advantages over traditional heat treatment in many aspects. However, the microstructure changes in electropulsing treatment (EPT) metals and alloys have not been fully explored, and the effects vary significantly on different material. When high-density electrical pulses are applied to metals and alloys, the input of electric energy and thermal energy generally leads to structural rearrangements, such as dynamic recrystallization, dislocation movements and grain refinement. The enhanced mechanical properties of the metals and alloys after high-density electropulsing treatment are reflected by the significant improvement of elongation. As a result, this technology holds great promise in improving the deformation limit and repairing cracks and defects in the plastic processing of metals. This review summarizes the effect of high-density electropulsing treatment on microstructural properties and, thus, the enhancement in mechanical strength, hardness and corrosion performance of metallic materials. It is noteworthy that the change of some properties can be related to the structure state before EPT (quenched, annealed, deformed or others). The mechanisms for the microstructural evolution, grain refinement and formation of oriented microstructures of different metals and alloys are presented. Future research trends of high-density electrical pulse technology for specific metals and alloys are highlighted.

Revealing origin of quasi-one dimensional current transport in defect rich two dimensional materials

DEFF Research Database (Denmark)

Lotz, Mikkel Rønne; Boll, Mads; Hansen, Ole

2014-01-01

to a non-uniform current flow characteristic of lower dimensionality. In this work, simulations based on a finite element method together with a Monte Carlo approach are used to establish the transition from 2D to quasi-1D current transport, when applying a micro four-point probe to measure on 2D...... conductors with an increasing amount of line-shaped defects. Clear 2D and 1D signatures are observed at low and high defect densities, respectively, and current density plots reveal the presence of current channels or branches in defect configurations yielding 1D current transport. A strong correlation...

Intracellular transport of low density lipoprotein-derived cholesterol is defective in Niemann-Pick type C fibroblasts

International Nuclear Information System (INIS)

Liscum, L.; Ruggiero, R.M.; Faust, J.R.

1989-01-01

Niemann-Pick disease type C (NPC) is characterized by substantial intracellular accumulation of unesterified cholesterol. The accumulation of unesterified cholesterol in NPC fibroblasts cultured with low density lipoprotein (LDL) appears to result from the inability of LDL to stimulate cholesterol esterification in addition to impaired LDL-mediated downregulation of LDL receptor activity and cellular cholesterol synthesis. Although a defect in cholesterol transport in NPC cells has been inferred from previous studies, no experiments have been reported that measure the intracellular movement of LDL-cholesterol specifically. We have used four approaches to assess intracellular cholesterol transport in normal and NPC cells and have determined the following: (a) mevinolin-inhibited NPC cells are defective in using LDL-cholesterol for growth. However, exogenously added mevalonate restores cell growth equally in normal and NPC cells; (b) the transport of LDL-derived [3H]cholesterol to the plasma membrane is slower in NPC cells, while the rate of appearance of [3H]acetate-derived, endogenously synthesized [3H]cholesterol at the plasma membrane is the same for normal and NPC cells; (c) in NPC cells, LDL-derived [3H]cholesterol accumulates in lysosomes to higher levels than normal, resulting in defective movement to other cell membranes; and (d) incubation of cells with LDL causes an increase in cholesterol content of NPC lysosomes that is threefold greater than that observed in normal lysosomes. Our results indicate that a cholesterol transport defect exists in NPC that is specific for LDL-derived cholesterol

Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

OpenAIRE

Park, H. R.; Liu, J. Z.; Roca i Cabarrocas, P.; Maruyama, A.; Isomura, M.; Wagner, S.; Abelson, J. R.; Finger, F.

2008-01-01

We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlat...

Precipitation of ferromagnetic phase induced by defect energies during creep deformation in Type 304 austenitic steel

Energy Technology Data Exchange (ETDEWEB)

Tsukada, Yuhki, E-mail: tsukada@silky.numse.nagoya-u.ac.j [Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Shiraki, Atsuhiro; Murata, Yoshinori [Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takaya, Shigeru [Japan Atomic Energy Agency, 4002 Narita-cho, O-arai-machi, Higashi-ibaraki-gun, Ibaraki 311-1393 (Japan); Koyama, Toshiyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Morinaga, Masahiko [Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2010-06-15

The correlation of defect energies with precipitation of the ferromagnetic phase near M{sub 23}C{sub 6} carbide during creep tests at high temperature in Type 304 austenitic steel was examined by estimating the defect energies near the carbide, based on micromechanics. As one of the defect energies, the precipitation energy was calculated by assuming M{sub 23}C{sub 6} carbide to be a spherical inclusion. The other defect energy, creep dislocation energy, was calculated based on dislocation density data obtained from transmission electron microscopy observations of the creep samples. The dislocation energy density was much higher than the precipitation energy density in the initial stage of the creep process, when the ferromagnetic phase started to increase. Creep dislocation energy could be the main driving force for precipitation of the ferromagnetic phase.

Precipitation of ferromagnetic phase induced by defect energies during creep deformation in Type 304 austenitic steel

International Nuclear Information System (INIS)

Tsukada, Yuhki; Shiraki, Atsuhiro; Murata, Yoshinori; Takaya, Shigeru; Koyama, Toshiyuki; Morinaga, Masahiko

2010-01-01

The correlation of defect energies with precipitation of the ferromagnetic phase near M 23 C 6 carbide during creep tests at high temperature in Type 304 austenitic steel was examined by estimating the defect energies near the carbide, based on micromechanics. As one of the defect energies, the precipitation energy was calculated by assuming M 23 C 6 carbide to be a spherical inclusion. The other defect energy, creep dislocation energy, was calculated based on dislocation density data obtained from transmission electron microscopy observations of the creep samples. The dislocation energy density was much higher than the precipitation energy density in the initial stage of the creep process, when the ferromagnetic phase started to increase. Creep dislocation energy could be the main driving force for precipitation of the ferromagnetic phase.

Si clusters/defective graphene composites as Li-ion batteries anode materials: A density functional study

International Nuclear Information System (INIS)

Li, Meng; Liu, Yue-Jie; Zhao, Jing-xiang; Wang, Xiao-guang

2015-01-01

Highlights: • We study the interaction between Si clusters with pristine and defective graphene. • We find that the binding strength of Si clusters on graphene can be enhanced to different degrees after introducing various defects. • It is found that both graphene and Si cluster in the Si/graphene composites can preserve their Li uptake ability. - Abstract: Recently, the Si/graphene hybrid composites have attracted considerable attention due to their potential application for Li-ion batteries. How to effectively anchor Si clusters to graphene substrates to ensure their stability is an important factor to determine their performance for Li-ion batteries. In the present work, we have performed comprehensive density functional theory (DFT) calculations to investigate the geometric structures, stability, and electronic properties of the deposited Si clusters on defective graphenes as well as their potential applications for Li-ion batteries. The results indicate that the interfacial bonding between these Si clusters with the pristine graphene is quietly weak with a small adsorption energy (<−0.21 eV). Due to the presence of vacancy site, the binding strength of Si clusters on defective graphene is much stronger than that of pristine one, accompanying with a certain amount of charge transfer from Si clusters to graphene substrates. Moreover, the ability of Si/graphene hybrids for Li uptake is studied by calculating the adsorption of Li atoms. We find that both graphenes and Si clusters in the Si/graphene composites preserve their Li uptake ability, indicating that graphenes not only server as buffer materials for accommodating the expansion of Si cluster, but also provide additional intercalation sites for Li

The pinning property of Bi-2212 single crystals with columnar defects

International Nuclear Information System (INIS)

Okamura, Kazunori; Kiuchi, Masaru; Otabe, Edmund Soji; Yasuda, Takashi; Matsushita, Teruo; Okayasu, Satoru

2004-01-01

It is qualitatively understood that the condensation energy density in oxide superconductors, which is one of the essential parameters for determining their pinning strength, becomes large with increasing dimensionality of the superconductor. However, the condensation energy density has not yet been evaluated quantitatively. Its value can be estimated from the elementary pinning force of a known defect. Columnar defects created by heavy ion irradiation are candidates for being such defects. That is, the size and number density of columnar defects can be given. In addition, it is known that two-dimensional vortices like those in Bi-2212 are forced into three-dimensional states by these defects in a magnetic field parallel to the defects. Thus, the condensation energy density can be estimated from the pinning property of the columnar defects even for two-dimensional superconductors. A similar analysis was performed also for three-dimensional Y-123. A discussion is given of the relationship between the condensation energy density and the anisotropy parameter estimated from measurements of anisotropic resistivity and peak field

Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

Science.gov (United States)

Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

1986-01-01

A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

Implementation of density functional embedding theory within the projector-augmented-wave method and applications to semiconductor defect states

International Nuclear Information System (INIS)

Yu, Kuang; Libisch, Florian; Carter, Emily A.

2015-01-01

We report a new implementation of the density functional embedding theory (DFET) in the VASP code, using the projector-augmented-wave (PAW) formalism. Newly developed algorithms allow us to efficiently perform optimized effective potential optimizations within PAW. The new algorithm generates robust and physically correct embedding potentials, as we verified using several test systems including a covalently bound molecule, a metal surface, and bulk semiconductors. We show that with the resulting embedding potential, embedded cluster models can reproduce the electronic structure of point defects in bulk semiconductors, thereby demonstrating the validity of DFET in semiconductors for the first time. Compared to our previous version, the new implementation of DFET within VASP affords use of all features of VASP (e.g., a systematic PAW library, a wide selection of functionals, a more flexible choice of U correction formalisms, and faster computational speed) with DFET. Furthermore, our results are fairly robust with respect to both plane-wave and Gaussian type orbital basis sets in the embedded cluster calculations. This suggests that the density functional embedding method is potentially an accurate and efficient way to study properties of isolated defects in semiconductors

Defect-engineered graphene chemical sensors with ultrahigh sensitivity.

Science.gov (United States)

Lee, Geonyeop; Yang, Gwangseok; Cho, Ara; Han, Jeong Woo; Kim, Jihyun

2016-05-25

We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.

Evaluation procedure of creep-fatigue defect growth in high temperature condition and application

International Nuclear Information System (INIS)

Park, Chang Gyu; Kim, Jong Bum; Lee, Jae Han

2003-12-01

This study proposed the evaluation procedure of creep-fatigue defect growth on the high-temperature cylindrical structure applicable to the KALIMER, which is developed by KAERI. Parameters used in creep defect growth and the evaluation codes with these parameters were analyzed. In UK, the evaluation procedure of defect initiation and growth were proposed with R5/R6 code. In Japan, simple evauation method was proposed by JNC. In France, RCC-MR A16 code which was evaluation procedure of the creep-fatigue defect initiation and growth related to leak before break was developed, and equations related to load conditions were modified lately. As an application example, the creep-fatigue defect growth on circumferential semi-elliptical surface defect in high temperature cylindrical structure was evaluated by RCC-MR A16

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

Influence of surface defects on the tensile strength of carbon fibers

Science.gov (United States)

Vautard, F.; Dentzer, J.; Nardin, M.; Schultz, J.; Defoort, B.

2014-12-01

The mechanical properties of carbon fibers, especially their tensile properties, are affected by internal and surface defects. In order to asses in what extent the generation of surface defects can result in a loss of the mechanical properties, non-surface treated carbon fibers were oxidized with three different surface treatment processes: electro-chemical oxidation, oxidation in nitric acid, and oxidation in oxygen plasma. Different surface topographies and surface chemistries were obtained, as well as different types and densities of surface defects. The density of surface defects was measured with both a physical approach (Raman spectroscopy) and a chemical approach (Active Surface Area). The tensile properties were evaluated by determining the Weibull modulus and the scale parameter of each reference, after measuring the tensile strength for four different gauge lengths. A relationship between the tensile properties and the nature and density of surface defects was noticed, as large defects largely control the value of the tensile strength. When optimized, some oxidation surface treatment processes can generate surface functional groups as well as an increase of the mechanical properties of the fibers, because of the removal of the contamination layer of pyrolytic carbon generated during the carbonization of the polyacrylonitrile precursor. Oxidation in oxygen plasma revealed to be a promising technology for alternative surface treatment processes, as high levels of functionalization were achieved and a slight improvement of the mechanical properties was obtained too.

Defect properties of CuCrO2: A density functional theory calculation

International Nuclear Information System (INIS)

Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

2012-01-01

Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Importing low-density ideas to high-density revitalisation

DEFF Research Database (Denmark)

Arnholtz, Jens; Ibsen, Christian Lyhne; Ibsen, Flemming

2016-01-01

Why did union officials from a high-union-density country like Denmark choose to import an organising strategy from low-density countries such as the US and the UK? Drawing on in-depth interviews with key union officials and internal documents, the authors of this article argue two key points. Fi...

Mechanical properties of highly defective graphene: from brittle rupture to ductile fracture.

Science.gov (United States)

Xu, Lanqing; Wei, Ning; Zheng, Yongping

2013-12-20

Defects are generally believed to deteriorate the superlative performance of graphene-based devices but may also be useful when carefully engineered to tailor the local properties and achieve new functionalities. Central to most defect-associated applications is the defect coverage and arrangement. In this work, we investigate, by molecular dynamics simulations, the mechanical properties and fracture dynamics of graphene sheets with randomly distributed vacancies or Stone-Wales defects under tensile deformations over a wide defect coverage range. With defects presented, an sp-sp(2) bonding network and an sp-sp(2)-sp(3) bonding network are observed in vacancy-defected and Stone-Wales-defected graphene, respectively. The ultimate strength degrades gradually with increasing defect coverage and saturates in the high-ratio regime, whereas the fracture strain presents an unusual descending-saturating-improving trend. In the dense vacancy defect situation, the fracture becomes more plastic and super-ductility is observed. Further fracture dynamics analysis reveals that the crack trapping by sp-sp(2) and sp-sp(2)-sp(3) rings and the crack-tip blunting account for the ductile fracture, whereas geometric rearrangement on the entire sheet for vacancy defects and geometric rearrangement on the specific defect sites for Stone-Wales defects account for their distinctive rules of the evolution of the fracture strain.

Design of robust hollow fiber membranes with high power density for osmotic energy production

KAUST Repository

Zhang, Sui

2014-04-01

This study highlights the design strategy of highly asymmetric hollow fiber membranes that possess both characteristics of high flux and high mechanical strength to effectively reap the osmotic energy from seawater brine with an ultrahigh power density. An advanced co-extrusion technology was employed to fabricate the polyethersulfone (PES) hollow fiber supports with diversified structures from macrovoid to sponge-like. The microstructure of the supports is found critical for the stability and water permeability of the thin film composite (TFC) membranes. A high porosity in the porous layer is needed to reduce internal concentration polarization, while a thick and relatively dense skin layer underneath the TFC layer is required to maintain good mechanical stability and stress dissipation. The pore size of the supporting layer underneath the TFC layer must be small with a narrow pore size distribution to ensure the formation of a less-defective, highly permeable and mechanically stable TFC layer. The newly developed hollow fiber comprising high asymmetry, high porosity, and a thick skin layer with a small and narrow pore size distribution underneath the TFC layer produces a maximum power density of 24.3W/m2 at 20.0bar by using 1M NaCl as the concentrated brine and deionized (DI) water as the feed. The proposed design strategy for ultrahigh power density membranes clearly advances the osmotic energy production close to commercialization with a quite cost-effective and practicable approach. © 2013 Elsevier B.V.

Design of robust hollow fiber membranes with high power density for osmotic energy production

KAUST Repository

Zhang, Sui; Sukitpaneenit, Panu; Chung, Neal Tai-Shung

2014-01-01

This study highlights the design strategy of highly asymmetric hollow fiber membranes that possess both characteristics of high flux and high mechanical strength to effectively reap the osmotic energy from seawater brine with an ultrahigh power density. An advanced co-extrusion technology was employed to fabricate the polyethersulfone (PES) hollow fiber supports with diversified structures from macrovoid to sponge-like. The microstructure of the supports is found critical for the stability and water permeability of the thin film composite (TFC) membranes. A high porosity in the porous layer is needed to reduce internal concentration polarization, while a thick and relatively dense skin layer underneath the TFC layer is required to maintain good mechanical stability and stress dissipation. The pore size of the supporting layer underneath the TFC layer must be small with a narrow pore size distribution to ensure the formation of a less-defective, highly permeable and mechanically stable TFC layer. The newly developed hollow fiber comprising high asymmetry, high porosity, and a thick skin layer with a small and narrow pore size distribution underneath the TFC layer produces a maximum power density of 24.3W/m2 at 20.0bar by using 1M NaCl as the concentrated brine and deionized (DI) water as the feed. The proposed design strategy for ultrahigh power density membranes clearly advances the osmotic energy production close to commercialization with a quite cost-effective and practicable approach. © 2013 Elsevier B.V.

High Energy Density Laboratory Astrophysics

CERN Document Server

Lebedev, Sergey V

2007-01-01

During the past decade, research teams around the world have developed astrophysics-relevant research utilizing high energy-density facilities such as intense lasers and z-pinches. Every two years, at the International conference on High Energy Density Laboratory Astrophysics, scientists interested in this emerging field discuss the progress in topics covering: - Stellar evolution, stellar envelopes, opacities, radiation transport - Planetary Interiors, high-pressure EOS, dense plasma atomic physics - Supernovae, gamma-ray bursts, exploding systems, strong shocks, turbulent mixing - Supernova remnants, shock processing, radiative shocks - Astrophysical jets, high-Mach-number flows, magnetized radiative jets, magnetic reconnection - Compact object accretion disks, x-ray photoionized plasmas - Ultrastrong fields, particle acceleration, collisionless shocks. These proceedings cover many of the invited and contributed papers presented at the 6th International Conference on High Energy Density Laboratory Astrophys...

Chemical stability and defect formation in CaHfO3

KAUST Repository

Alay-E-Abbas, Syed Muhammad

2014-04-01

Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.

Chemical stability and defect formation in CaHfO3

KAUST Repository

Alay-E-Abbas, Syed Muhammad; Nazir, Safdar; Mun Wong, Kin; Shaukat, Ali; Schwingenschlö gl, Udo

2014-01-01

Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.

Proteomic Markers of Functional Sperm Population in Bovines: Comparison of Low- and High-Density Spermatozoa Following Cryopreservation.

Science.gov (United States)

D'Amours, Olivier; Frenette, Gilles; Bourassa, Sylvie; Calvo, Ézéchiel; Blondin, Patrick; Sullivan, Robert

2018-01-05

Mammalian semen contains a heterogeneous population of sperm cells. This heterogeneity results from variability in the complex processes of cell differentiation in the testis, biochemical modifications undergone by spermatozoa during transit along the male reproductive tract, interactions with secretions from accessory sex glands at ejaculation, and, in the context of reproductive technologies, in the ability of ejaculated spermatozoa to resist damage associated with freeze-thaw procedures. When submitted to density gradient centrifugation, ejaculated spermatozoa distribute themselves into two distinct populations: a low-density population characterized by low motility parameters, and a high-density population with high motility characteristics. To understand the origin of ejaculated spermatozoa heterogeneity, cryopreserved semen samples from bulls used by the artificial insemination (A.I.) industry were submitted to Percoll gradient centrifugation. Proteins from low and high density spermatozoa were then extracted with sodium deoxycholate and submitted to proteomic analysis using iTRAQ (isobaric tag for relative and absolute quantitation) methodologies. Quantification of selected sperm proteins was confirmed by multiple reaction monitoring (MRM). Overall, 31 different proteins were more abundant in low-density spermatozoa, while 80 different proteins were more abundant in the high-density subpopulation. Proteins enriched in high-density spermatozoa were markers of sperm functionality such as the glycolytic process, binding to the egg zona pellucida, and motility. Low-density spermatozoa were not solely characterized by loss of proteins and their associated functions. Chaperonin-containing TCP1s and chaperones are hallmarks of the low-density subpopulation. iTRAQ analysis revealed that other proteins such as binder of sperm proteins, histone, GPX5, ELSPBP1, and clusterin are overexpressed in low-density spermatozoa suggesting that these proteins represent defects

Mechanical properties of highly defective graphene: from brittle rupture to ductile fracture

International Nuclear Information System (INIS)

Xu, Lanqing; Wei, Ning; Zheng, Yongping

2013-01-01

Defects are generally believed to deteriorate the superlative performance of graphene-based devices but may also be useful when carefully engineered to tailor the local properties and achieve new functionalities. Central to most defect-associated applications is the defect coverage and arrangement. In this work, we investigate, by molecular dynamics simulations, the mechanical properties and fracture dynamics of graphene sheets with randomly distributed vacancies or Stone–Wales defects under tensile deformations over a wide defect coverage range. With defects presented, an sp–sp 2 bonding network and an sp–sp 2 –sp 3 bonding network are observed in vacancy-defected and Stone–Wales-defected graphene, respectively. The ultimate strength degrades gradually with increasing defect coverage and saturates in the high-ratio regime, whereas the fracture strain presents an unusual descending–saturating–improving trend. In the dense vacancy defect situation, the fracture becomes more plastic and super-ductility is observed. Further fracture dynamics analysis reveals that the crack trapping by sp–sp 2 and sp–sp 2 –sp 3 rings and the crack-tip blunting account for the ductile fracture, whereas geometric rearrangement on the entire sheet for vacancy defects and geometric rearrangement on the specific defect sites for Stone–Wales defects account for their distinctive rules of the evolution of the fracture strain. (paper)

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

Energy Technology Data Exchange (ETDEWEB)

Leontis, I.; Nassiopoulou, A. G., E-mail: A.Nassiopoulou@inn.demokritos.gr [INN, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos, Aghia Paraskevi, 153 10 Athens (Greece); Botzakaki, M. A.; Georga, S. N. [Department of Physics, University of Patras, 26 504 Rion (Greece)

2016-06-28

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

International Nuclear Information System (INIS)

Leontis, I.; Nassiopoulou, A. G.; Botzakaki, M. A.; Georga, S. N.

2016-01-01

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al_2O_3/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm"2. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

High-density multicore fibers

DEFF Research Database (Denmark)

Takenaga, K.; Matsuo, S.; Saitoh, K.

2016-01-01

High-density single-mode multicore fibers were designed and fabricated. A heterogeneous 30-core fiber realized a low crosstalk of −55 dB. A quasi-single-mode homogeneous 31-core fiber attained the highest core count as a single-mode multicore fiber.......High-density single-mode multicore fibers were designed and fabricated. A heterogeneous 30-core fiber realized a low crosstalk of −55 dB. A quasi-single-mode homogeneous 31-core fiber attained the highest core count as a single-mode multicore fiber....

High-field, high-density tokamak power reactor

International Nuclear Information System (INIS)

Cohn, D.R.; Cook, D.L.; Hay, R.D.; Kaplan, D.; Kreischer, K.; Lidskii, L.M.; Stephany, W.; Williams, J.E.C.; Jassby, D.L.; Okabayashi, M.

1977-11-01

A conceptual design of a compact (R 0 = 6.0 m) high power density (average P/sub f/ = 7.7 MW/m 3 ) tokamak demonstration power reactor has been developed. High magnetic field (B/sub t/ = 7.4 T) and moderate elongation (b/a = 1.6) permit operation at the high density (n(0) approximately 5 x 10 14 cm -3 ) needed for ignition in a relatively small plasma, with a spatially-averaged toroidal beta of only 4%. A unique design for the Nb 3 Sn toroidal-field magnet system reduces the stress in the high-field trunk region, and allows modularization for simpler disassembly. The modest value of toroidal beta permits a simple, modularized plasma-shaping coil system, located inside the TF coil trunk. Heating of the dense central plasma is attained by the use of ripple-assisted injection of 120-keV D 0 beams. The ripple-coil system also affords dynamic control of the plasma temperature during the burn period. A FLIBE-lithium blanket is designed especially for high-power-density operation in a high-field environment, and gives an overall tritium breeding ratio of 1.05 in the slowly pumped lithium

High temperature defect equilibrium in ZnS:Cu single crystals

Energy Technology Data Exchange (ETDEWEB)

Lott, K.; Shinkarenko, S.; Tuern, L.; Nirk, T.; Oepik, A. [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia); Kallavus, U. [Centre for Materials Research, Tallinn University of Technology, Tallinn (Estonia); Gorokhova, E. [Scientific Research and Technological Institute of Optical Material Science, S. I. Vavilov State Optical Institute, All-Russia Science Center, St. Petersburg (Russian Federation); Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Moscow (Russian Federation)

2010-07-15

High temperature investigations in ZnS:Cu crystals were performed under defined conditions. High temperature electrical conductivity and copper solubility data were obtained under different component vapour pressures and under different sample temperatures. The experimental data at sulphur vapour pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder. Compensating association of copper with this antistructure defect may occur. Antistructure disorder disappears with increasing of zinc vapour pressure and with increasing role of holes in bipolar conductivity. The method for solving the system of quasichemical reactions without approximation was used to model high temperature defect equilibrium. This model contains antistructure disorder and copper solubility limitation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

Energy Technology Data Exchange (ETDEWEB)

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

2010-09-01

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

High density harp for SSCL linac

International Nuclear Information System (INIS)

Fritsche, C.T.; Krogh, M.L.; Crist, C.E.

1993-01-01

AlliedSignal Inc., Kansas City Division, and the Superconducting Super Collider Laboratory (SSCL) are collaboratively developing a high density harp for the SSCL linac. This harp is designed using hybrid microcircuit (HMC) technology to obtain a higher wire density than previously available. The developed harp contains one hundred twenty-eight 33-micron-diameter carbon wires on 0.38-mm centers. The harp features an onboard broken wire detection circuit. Carbon wire preparation and attachment processes were developed. High density surface mount connectors were located. The status of high density harp development will be presented along with planned future activities

High density harp for SSCL linac

International Nuclear Information System (INIS)

Fritsche, C.T.; Krogh, M.L.

1993-05-01

AlliedSignal Inc., Kansas City Division, and the Superconducting Super Collider Laboratory (SSCL) are collaboratively developing a high density harp for the SSCL linac. This harp is designed using hybrid microcircuit (HMC) technology to obtain a higher wire density than previously available. The developed harp contains one hundred twenty-eight 33-micron-diameter carbon wires on 0.38-mm centers. The harp features an onboard broken wire detection circuit. Carbon wire preparation and attachment processes were developed. High density surface mount connectors were located. The status of high density harp development will be presented along with planned future activities

Extrinsic- and intrinsic-defect creation in amorphous SiO2

International Nuclear Information System (INIS)

Devine, R.A.B.; Francou, J.

1990-01-01

We have studied the creation efficiency of various intrinsic and extrinsic defects in high-[OH] amorphous silica subjected to the ultraviolet emission from an O 2 plasma or 60 Co γ-ray radiation. Both oxygen-vacancy- and nitrogen-related defects are observed following γ-ray irradiation or ultraviolet exposure. The wavelength range responsible for defect creation is estimated to be 200 approx-lt λ approx-lt 300 nm (4 approx-lt E photon approx-lt 5.9 eV). The ultraviolet power output of the plasma estimated by comparing defect yields with those from a Hg lamp (λ=185 and 254 nm) suggests 200 approx-lt P approx-lt 900 mW cm -2 for a plasma power density ∼300 mW cm -3 . Nonbridging oxygen-hole centers and hydrogen-related defect centers as well as methyl radical (CH 3 . ) defects are observed after γ-ray irradiation but not after ultraviolet exposure. The efficiency of creation of the various defects is material dependent

High density dispersion fuel

International Nuclear Information System (INIS)

Hofman, G.L.

1996-01-01

A fuel development campaign that results in an aluminum plate-type fuel of unlimited LEU burnup capability with an uranium loading of 9 grams per cm 3 of meat should be considered an unqualified success. The current worldwide approved and accepted highest loading is 4.8 g cm -3 with U 3 Si 2 as fuel. High-density uranium compounds offer no real density advantage over U 3 Si 2 and have less desirable fabrication and performance characteristics as well. Of the higher-density compounds, U 3 Si has approximately a 30% higher uranium density but the density of the U 6 X compounds would yield the factor 1.5 needed to achieve 9 g cm -3 uranium loading. Unfortunately, irradiation tests proved these peritectic compounds have poor swelling behavior. It is for this reason that the authors are turning to uranium alloys. The reason pure uranium was not seriously considered as a dispersion fuel is mainly due to its high rate of growth and swelling at low temperatures. This problem was solved at least for relatively low burnup application in non-dispersion fuel elements with small additions of Si, Fe, and Al. This so called adjusted uranium has nearly the same density as pure α-uranium and it seems prudent to reconsider this alloy as a dispersant. Further modifications of uranium metal to achieve higher burnup swelling stability involve stabilization of the cubic γ phase at low temperatures where normally α phase exists. Several low neutron capture cross section elements such as Zr, Nb, Ti and Mo accomplish this in various degrees. The challenge is to produce a suitable form of fuel powder and develop a plate fabrication procedure, as well as obtain high burnup capability through irradiation testing

Real-time defect detection on highly reflective curved surfaces

Science.gov (United States)

Rosati, G.; Boschetti, G.; Biondi, A.; Rossi, A.

2009-03-01

This paper presents an automated defect detection system for coated plastic components for the automotive industry. This research activity came up as an evolution of a previous study which employed a non-flat mirror to illuminate and inspect high reflective curved surfaces. According to this method, the rays emitted from a light source are conveyed on the surface under investigation by means of a suitably curved mirror. After the reflection on the surface, the light rays are collected by a CCD camera, in which the coating defects appear as shadows of various shapes and dimensions. In this paper we present an evolution of the above-mentioned method, introducing a simplified mirror set-up in order to reduce the costs and the complexity of the defect detection system. In fact, a set of plane mirrors is employed instead of the curved one. Moreover, the inspection of multiple bend radius parts is investigated. A prototype of the machine vision system has been developed in order to test this simplified method. This device is made up of a light projector, a set of plane mirrors for light rays reflection, a conveyor belt for handling components, a CCD camera and a desktop PC which performs image acquisition and processing. Like in the previous system, the defects are identified as shadows inside a high brightness image. At the end of the paper, first experimental results are presented.

High regression rate, high density hybrid fuels, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR program will investigate high energy density novel nanofuels combined with high density binders for use with an N2O oxidizer. Terves has developed...

Research on Defects Inspection of Solder Balls Based on Eddy Current Pulsed Thermography

Directory of Open Access Journals (Sweden)

Xiuyun Zhou

2015-10-01

Full Text Available In order to solve tiny defect detection for solder balls in high-density flip-chip, this paper proposed feasibility study on the effect of detectability as well as classification based on eddy current pulsed thermography (ECPT. Specifically, numerical analysis of 3D finite element inductive heat model is generated to investigate disturbance on the temperature field for different kind of defects such as cracks, voids, etc. The temperature variation between defective and non-defective solder balls is monitored for defects identification and classification. Finally, experimental study is carried on the diameter 1mm tiny solder balls by using ECPT and verify the efficacy of the technique.

Trade-off between quantum capacitance and thermodynamic stability of defected graphene: an implication for supercapacitor electrodes

Science.gov (United States)

Srivastava, Anurag; SanthiBhushan, Boddepalli

2018-03-01

Defects are inevitable most of the times either at the synthesis, handling or processing stage of graphene, causes significant deviation of properties. The present work discusses the influence of vacancy defects on the quantum capacitance as well as thermodynamic stability of graphene, and the nitrogen doping pattern needs to be followed to attain a trade-off between these two. Density Functional Theory (DFT) calculations have been performed to analyze various vacancy defects and different possible nitrogen doping patterns at the vacancy site of graphene, with an implication for supercapacitor electrodes. The results signify that vacancy defect improves the quantum capacitance of graphene at the cost of thermodynamic stability, while the nitrogen functionalization at the vacancy improves thermodynamic stability and quantum capacitance both. It has been observed that functionalizing all the dangling carbons at the defect site with nitrogen is the key to attain high thermodynamic stability as well as quantum capacitance. Furthermore, the results signify the suitability of these functionalized graphenes for anode electrode of high energy density asymmetric supercapacitors.

Point defects in platinum

International Nuclear Information System (INIS)

Piercy, G.R.

1960-01-01

An investigation was made of the mobility and types of point defect introduced in platinum by deformation in liquid nitrogen, quenching into water from 1600 o C, or reactor irradiation at 50 o C. In all cases the activation energy for motion of the defect was determined from measurements of electrical resistivity. Measurements of density, hardness, and x-ray line broadening were also made there applicable. These experiments indicated that the principal defects remaining in platinum after irradiation were single vacant lattice sites and after quenching were pairs of vacant lattice sites. Those present after deformation In liquid nitrogen were single vacant lattice sites and another type of defect, perhaps interstitial atoms. (author)

Topological defects in extended inflation

International Nuclear Information System (INIS)

Copeland, E.J.; Kolb, E.W.; Chicago Univ., IL; Liddle, A.R.

1990-04-01

We consider the production of topological defects, especially cosmic strings, in extended inflation models. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of bubbles when they collide. This mechanism allows a natural combination of inflation and large-scale structure via cosmic strings. 18 refs

Topological defects in extended inflation

International Nuclear Information System (INIS)

Copeland, E.J.; Kolb, E.W.; Liddle, A.R.

1990-01-01

We consider the production of topological defects, especially cosmic strings, in extended-inflation models. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of the bubbles when they collide. This mechanism allows a natural combination of inflation and large-scale structure via cosmic strings

Quantitative assessment of slit Mura defect in a thin film transistor-liquid crystal display based on chromaticity and optical density

International Nuclear Information System (INIS)

Tzu, Fu-Ming; Chou, Jung-Hua

2010-01-01

An innovative non-contact optical inspection method is developed to quantify slit Mura defects for thin film transistor–liquid crystal displays (TFT-LCDs). From the measurements of both chromaticity and optical densities across the slit Mura, the results indicate that the optical density profile is a concave shape and the chromaticity distribution is a convex shape. A linear relation with a negative slope exists between the chromaticity and optical density. A larger colour difference has a steeper slope, and vice versa. All of the measurements with uncertainties of a 99.7% confidence interval satisfy the requirements of the flat panel display industry. The proposed method can accurately quantify the pattern of blue slit Mura of TFT-LCDs; even the perceptibility is below the just noticeable difference

Insulating Behavior in Graphene with Irradiation-induced Lattice Defects

Science.gov (United States)

Chen, Jian-Hao; Williams, Ellen; Fuhrer, Michael

2010-03-01

We irradiated cleaned graphene on silicon dioxide in ultra-high vacuum with low energy inert gas ions to produce lattice defects [1], and investigated in detail the transition from metallic to insulating temperature dependence of the conductivity as a function of defect density. We measured the low field magnetoresistance and temperature-dependent resistivity in situ and find that weak localization can only account for a small correction of the resistivity increase with decreasing temperature. We will discuss possible origins of the insulating temperature dependent resistivity in defected graphene in light of our recent experiments. [4pt] [1] Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, PRL 102, 236805 (2009)

Defect pair formation in fluorine and nitrogen codoped TiO2

Science.gov (United States)

Kordatos, A.; Kelaidis, N.; Chroneos, A.

2018-04-01

Titanium oxide is extensively investigated because of its high chemical stability and its photocatalytic properties; nevertheless, the large band gap limits its activity to a small portion of the solar spectrum. Nitrogen and fluorine codoping is an efficient defect engineering strategy to increase the photocatalytic activity of titanium oxide. In the present study, we apply density functional theory to investigate the interaction of nitrogen with fluorine and the formation of defect pairs. We show that in fluorine and nitrogen codoped titanium oxide, the FiNi, FONi, and FiNTi defects can form. Their impact on the electronic structure of titanium oxide is discussed.

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

Defect-Mediated Lithium Adsorption and Diffusion on Monolayer Molybdenum Disulfide

OpenAIRE

Sun, Xiaoli; Wang, Zhiguo; Fu, Yong Qing

2015-01-01

Monolayer Molybdenum Disulfide (MoS2) is a promising anode material for lithium ion batteries because of its high capacities. In this work, first principle calculations based on spin density functional theory were performed to investigate adsorption and diffusion of lithium on monolayer MoS2 with defects, such as single- and few-atom vacancies, antisite, and grain boundary. The values of adsorption energies on the monolayer MoS2 with the defects were increased compared to those on the pristin...

Magnetization of High Density Hadronic Fluid

DEFF Research Database (Denmark)

Bohr, Henrik; Providencia, Constanca; da Providencia, João

2012-01-01

In the present paper the magnetization of a high density relativistic fluid of elementary particles is studied. At very high densities, such as may be found in the interior of a neutron star, when the external magnetic field is gradually increased, the energy of the normal phase of the fluid...... in the particle fluid. For nuclear densities above 2 to 3 rho(0), where rho(0) is the equilibrium nuclear density, the resulting magnetic field turns out to be rather huge, of the order of 10(17) Gauss....

Adsorption modes of molecular iodine on defected boron nitrides: A DFT study

Science.gov (United States)

Arabieh, Masoud; Azar, Yavar Taghipour

2018-03-01

The interaction of molecular iodine with pristine and monovacant boron-nitride quantum dots (QDs) have been investigated using density functional theory. It was found that removing one B or N single atom significantly decreased the calculated Eg values at various exchange functional. In B-defected BN system, the localized spin densities canceled each other and overall polarization of system was found to be equal to unity. For N-defected system there was smaller spin densities localized on each closest B atoms. Both B- and N-vacancies caused appearance of new states in gap region. Our calculation revealed that spin density and polarization of defected system are localized on vacancy region and other atoms did not take part in this polarization. The results of electron localization function for N-DBN showed there was high density region at the position of removed nitrogen atom. The calculated adsorption energies implied that there was no significant chemical interaction between iodine molecule and pristine BN sheet. We suggested that when a deficiency was imposed to the BN sheet, the reactivity of the modified system toward iodine molecule significantly could increase. We found strong interaction between iodine and nitrogen atoms of B-DBN system. In the case of I2/N-DBN system the neighbor atoms had no contribution in spin polarization of the system and it seemed that all spin density of system transferred to the iodine molecule after adsorption. Strong correlation between molecular iodine orientation and BN-QDs via their interactions type has been clarified in this work. These findings may provide a deeper insight into halogen molecules interactions with low dimensional defected boron nitrides.

Density of states measurements in a p-i-n solar cell

Energy Technology Data Exchange (ETDEWEB)

Crandall, R.S.; Wang, Q. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

The authors describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds.

Enhanced defects recombination in ion irradiated SiC

International Nuclear Information System (INIS)

Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

2010-01-01

Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

Structural and electronic properties of the adsorbed and defected Cu nanowires: A density-functional theory study

Energy Technology Data Exchange (ETDEWEB)

Duan, Ying-Ni [College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi (China); Department of Medical Engineering and Technology, Xinjiang Medical University, Urumqi 830011, Xinjiang (China); Zhang, Jian-Min, E-mail: jianm_zhang@yahoo.com [College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi (China); Fan, Xiao-Xi [Department of Medical Engineering and Technology, Xinjiang Medical University, Urumqi 830011, Xinjiang (China); Xu, Ke-Wei [College of Physics and Mechanical and Electronic Engineering, Xian University of Arts and Science, Xian 710065, Shaanxi (China)

2014-12-01

Using first-principles calculations based on density-functional theory, we systematically investigate the influence of adsorbates (CO molecule and O atom) and defects (adsorb one extra Cu atom and monovacancy) on the structural and electronic properties of Cu{sub 5-1}NW and Cu{sub 6-1}NW. For both nanowires, CO molecule prefers to adsorb on the top site, while O atom prefers to adsorb on the center site. The hybridization between the CO and Cu states is dominated by the donation–backdonation process, which leads to the formation of bonding/antibonding pairs, 5σ{sub b}/5σ{sub a} and 2π{sub b}{sup ⁎}/2π{sub a}{sup ⁎}. The larger adsorption energies, larger charge transfers to O adatom and larger decrease in quantum conductance 3G{sub 0} for an O atom adsorbed on the Cu{sub 5-1}NW and Cu{sub 6-1}NW show both Cu{sub 5-1}NW and Cu{sub 6-1}NW can be used as an O sensor. Furthermore, the decrease in quantum conductance 1G{sub 0} for a CO molecule adsorbed on the Cu{sub 6-1}NW also shows the Cu{sub 6-1}NW can be used to detect CO molecule. So we expect these results may have implications for CuNW based chemical sensing. High adsorption energy of one extra Cu atom and relatively low formation energy of a monovacancy suggest that these two types of defects are likely to occur in the fabrication of CuNWs. One extra Cu atom does not decrease the quantum conductance, while a Cu monovacancy leads to a drop of the quantum conductance.

Non-perturbative embedding of local defects in crystalline materials

International Nuclear Information System (INIS)

Cances, Eric; Deleurence, Amelie; Lewin, Mathieu

2008-01-01

We present a new variational model for computing the electronic first-order density matrix of a crystalline material in the presence of a local defect. A natural way to obtain variational discretizations of this model is to expand the difference Q between the density matrix of the defective crystal and the density matrix of the perfect crystal, in a basis of precomputed maximally localized Wannier functions of the reference perfect crystal. This approach can be used within any semi-empirical or density functional theory framework

Electrochemical Implications of Defects in Carbon Nanotubes

Science.gov (United States)

Hall, Jonathan Peter

The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multi-walled CNT morphologies. The controlled addition of argon, hydrogen, and chlorine ions in addition to atomic hydrogen and magnesium vapor was used for varying the charge and type of extrinsic defects. To quantify changes in the CNTs upon treatment, Raman spectroscopy and electrochemical techniques were employed. It was indicated from Raman spectroscopy, cyclic voltammetry, electrochemical impedance spectroscopy, and chronopotentiometric experiments that the electrochemical response of hollow type CNTs could be tailored more significantly compared to bamboo type CNTs, which have innately high reactive site densities and are less amenable to modification. Total defect density and edge-plane-like defect concentrations monitored through Raman spectroscopy were used to correlate changes in the electrochemical response of the CNT electrodes as a function of treatment. The implementation of CNT electrodes in a prototypical electrolytic capacitor device was then explored and characterized. Dependencies on source current and redox couple concentration were evaluated, as well as changes in the total capacitance as a function of treatment. Cyclability studies were also performed as a function of source current magnitude to evaluate the longevity of the faradaic currents which typically decrease over time in other similar capacitors. This thesis then concludes with an overall summary of the themes and findings of the research presented in this work.

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Electronic structure properties of deep defects in hBN

Science.gov (United States)

Dev, Pratibha; Prdm Collaboration

In recent years, the search for room-temperature solid-state qubit (quantum bit) candidates has revived interest in the study of deep-defect centers in semiconductors. The charged NV-center in diamond is the best known amongst these defects. However, as a host material, diamond poses several challenges and so, increasingly, there is an interest in exploring deep defects in alternative semiconductors such as hBN. The layered structure of hBN makes it a scalable platform for quantum applications, as there is a greater potential for controlling the location of the deep defect in the 2D-matrix through careful experiments. Using density functional theory-based methods, we have studied the electronic and structural properties of several deep defects in hBN. Native defects within hBN layers are shown to have high spin ground states that should survive even at room temperature, making them interesting solid-state qubit candidates in a 2D matrix. Partnership for Reduced Dimensional Material (PRDM) is part of the NSF sponsored Partnerships for Research and Education in Materials (PREM).

Effects of nano-void density, size and spatial population on thermal conductivity: a case study of GaN crystal

International Nuclear Information System (INIS)

Zhou, X W; Jones, R E

2012-01-01

The thermal conductivity of a crystal is sensitive to the presence of surfaces and nanoscale defects. While this opens tremendous opportunities to tailor thermal conductivity, true ‘phonon engineering’ of nanocrystals for a specific electronic or thermoelectric application can only be achieved when the dependence of thermal conductivity on the defect density, size and spatial population is understood and quantified. Unfortunately, experimental studies of the effects of nanoscale defects are quite challenging. While molecular dynamics simulations are effective in calculating thermal conductivity, the defect density range that can be explored with feasible computing resources is unrealistically high. As a result, previous work has not generated a fully detailed understanding of the dependence of thermal conductivity on nanoscale defects. Using GaN as an example, we have combined a physically motivated analytical model and highly converged large-scale molecular dynamics simulations to study the effects of defects on thermal conductivity. An analytical expression for thermal conductivity as a function of void density, size, and population has been derived and corroborated with the model, simulations, and experiments. (paper)

Competition between microstructure and defect in multiaxial high cycle fatigue

Directory of Open Access Journals (Sweden)

F. Morel

2015-07-01

Full Text Available This study aims at providing a better understanding of the effects of both microstructure and defect on the high cycle fatigue behavior of metallic alloys using finite element simulations of polycrystalline aggregates. It is well known that the microstructure strongly affects the average fatigue strength and when the cyclic stress level is close to the fatigue limit, it is often seen as the main source of the huge scatter generally observed in this fatigue regime. The presence of geometrical defects in a material can also strongly alter the fatigue behavior. Nonetheless, when the defect size is small enough, i.e. under a critical value, the fatigue strength is no more affected by the defect. The so-called Kitagawa effect can be interpreted as a competition between the crack initiation mechanisms governed either by the microstructure or by the defect. Surprisingly, only few studies have been done to date to explain the Kitagawa effect from the point of view of this competition, even though this effect has been extensively investigated in the literature. The primary focus of this paper is hence on the use of both FE simulations and explicit descriptions of the microstructure to get insight into how the competition between defect and microstructure operates in HCF. In order to account for the variability of the microstructure in the predictions of the macroscopic fatigue limits, several configurations of crystalline orientations, crystal aggregates and defects are studied. The results of each individual FE simulation are used to assess the response at the macroscopic scale thanks to a probabilistic fatigue criterion proposed by the authors in previous works. The ability of this criterion to predict the influence of defects on the average and the scatter of macroscopic fatigue limits is evaluated. In this paper, particular emphasis is also placed on the effect of different loading modes (pure tension, pure torsion and combined tension and torsion on

Critical current density and wire fabrication of high-TC superconductors

International Nuclear Information System (INIS)

Schlabach, T.D.; Jin, S.; Sherwood, R.C.; Tiefel, T.H.

1989-01-01

In this paper, some of the recent investigations of wire fabrication techniques and critical current behavior in high T c superconductors will be reviewed. In spite of the tremendous interest and research effort, the progress toward major applications of the bulk high-temperature superconductors has been impeded by, among other thins, the low critical currents and their severe deterioration in weak magnetic fields. Significant advances, however, have been made in understanding the causes of the problem as well as in improving the current-carrying capacity through proper microstructural control such as the melt-textured-growth in Y-Ba-Cu-O. The low density of effective flux-pinning sites in bulk Y-Ba-Cu-O limits J c at 77K in high magnetic fields to about 10 4 A/cm 2 even in the absence of weak links. Magnetization measurements on Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O at 77K by various researchers indicate even weaker flux pinning capabilities in these materials than in Y-Ba-Cu-O. The challenge in the future is to obtain suitable flux-pinning defects by choosing the right processing and chemistry changes

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

Science.gov (United States)

Cagomoc, Charisse Marie D.; De Leon, Mark Jeffry D.; Ebuen, Anna Sophia M.; Gilos, Marlo Nicole R.; Vasquez, Magdaleno R., Jr.

2018-01-01

Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm2 and a working pressure of 110 Pa for up to 6 min of treatment. Optical microscopy studies revealed the removal of up to 74% of the polymer contamination upon plasma exposure. Surface free energy (SFE) increased owing to the removal of contaminants as well as the formation of polar groups on the Si surface after plasma treatment. Atomic force microscopy scans showed a decrease in surface roughness from 12.25 nm for contaminated samples to 0.77 nm after plasma cleaning. The smoothening effect can be attributed to the removal of HDPE particles from the surface. In addition, scanning electron microscope images showed that there was a decrease in the amount of HDPE contaminants adhering onto the surface after plasma exposure.

Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

Energy Technology Data Exchange (ETDEWEB)

Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

2017-05-15

The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Graphene defects induced by ion beam

Science.gov (United States)

Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

2017-10-01

The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

Effects of Nb and Si on densities of valence electrons in bulk and defects of Fe3Al alloys

Institute of Scientific and Technical Information of China (English)

邓文; 钟夏平; 黄宇阳; 熊良钺; 王淑荷; 郭建亭; 龙期威

1999-01-01

Positron lifetime measurements have been performed in binary Fe3Al and Fe3Al doping with Nb or Si alloys. The densities of valence electrons of the bulk and microdefects in all tested samples have been calculated by using the positron lifetime parameters. Density of valence electron is low in the bulk of Fe3Al alloy. It indicates that, the 3d electrons in a Fe atom have strong-localized properties and tend to form covalent bonds with Al atoms, and the bonding nature in Fe3Al is a mixture of metallic and covalent bonds. The density of valence electron is very low in the defects of Fe3Al grain boundary, which makes the bonding cohesion in grain boundary quite weak. The addition of Si to Fe3Al gives rise to the decrease of the densities of valence electrons in the bulk and the grain boundary thus the metallic bonding cohesion. This makes the alloy more brittle. The addition of Nb to Fe3Al results in the decrease of the ordering energy of the alloy and increases the density of valence electron and th

Positron studies of defected metals, metallic surfaces. Final report, July 1, 1985--December 1, 1991

Energy Technology Data Exchange (ETDEWEB)

Bansil, A.

1991-12-31

Specific problems proposed under this project included the treatment of electronic structure and momentum density in various disordered and defected systems. Since 1987, when the new high-temperature superconductors were discovered, the project focused extensively on questions concerning the electronic structure and Fermiology of high-{Tc} superconductors, in particular, (i) momentum density and positron experiments, (ii) angle-resolved photoemission intensities, (iii) effects of disorder and substitutions in the high-{Tc}`s.

Revealing origin of quasi-one dimensional current transport in defect rich two dimensional materials

International Nuclear Information System (INIS)

Lotz, Mikkel R.; Boll, Mads; Bøggild, Peter; Petersen, Dirch H.; Hansen, Ole; Kjær, Daniel

2014-01-01

The presence of defects in graphene have for a long time been recognized as a bottleneck for its utilization in electronic and mechanical devices. We recently showed that micro four-point probes may be used to evaluate if a graphene film is truly 2D or if defects in proximity of the probe will lead to a non-uniform current flow characteristic of lower dimensionality. In this work, simulations based on a finite element method together with a Monte Carlo approach are used to establish the transition from 2D to quasi-1D current transport, when applying a micro four-point probe to measure on 2D conductors with an increasing amount of line-shaped defects. Clear 2D and 1D signatures are observed at low and high defect densities, respectively, and current density plots reveal the presence of current channels or branches in defect configurations yielding 1D current transport. A strong correlation is found between the density filling factor and the simulation yield, the fraction of cases with 1D transport and the mean sheet conductance. The upper transition limit is shown to agree with the percolation threshold for sticks. Finally, the conductance of a square sample evaluated with macroscopic edge contacts is compared to the micro four-point probe conductance measurements and we find that the micro four-point probe tends to measure a slightly higher conductance in samples containing defects

Interactions of structural defects with metallic impurities in multicrystalline silicon

International Nuclear Information System (INIS)

McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

1997-01-01

Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

Effect of defect length on rolling contact fatigue crack propagation in high strength steel

Directory of Open Access Journals (Sweden)

T. Makino

2015-10-01

Full Text Available The objective of the present paper is to clarify the effect of defect length in depth direction on rolling contact fatigue (RCF crack propagation in high strength steel. RCF test and synchrotron radiation micro computed tomography (SR micro CT imaging were conducted. In the case of the defect with the 15 m diameter, flaking life decreased with increasing defect length. In a comparison of the CT image and the SEM view, the shapes of defects and the locations of the horizontal cracks were almost the same respectively. The mechanism of RCF crack propagation was discussed by finite element (FE analysis. Defects led to higher tensile residual stress than that without defects in the region where the defect exists. The shear stress range at 0.1 mm in depth on the middle line of the defect and the range of mode II stress intensity factor at the bottom of a vertical crack increased with increasing defect length.

Defect engineering of mesoporous nickel ferrite and its application for highly enhanced water oxidation catalysis

Energy Technology Data Exchange (ETDEWEB)

Yue, Qiudi; Liu, Cunming; Wan, Yangyang; Wu, Xiaojun; Zhang, Xiaoyi; Du, Pingwu

2018-02-01

Spinel nickel ferrite (NiFe2O4) emerges as a promising low-cost catalyst for water splitting but it usually shows low catalytic activity because of its limited number of active sites and poor conductivity. For the first time, herein we have successfully overcome its weaknesses using defect engineering approach by creating oxygen vacancies in NiFe2O4. The existence of oxygen vacancy not only shifts up the d-band center, strengthens the adsorption of H2O, and thus provides more active catalytic sites, but also tunes the electron configuration and creates massive number of defective donor states in the band gap to facilitate charge transfer processes. The optimal defective catalyst showed significantly enhanced catalytic OER performance with an OER overpotential as low as 0.35 V at 10 mA cm-2 and a Tafel slope of only ~40 mV dec-1. Moreover, the impressive specific mass and area current density of 17.5 A g-1 and 0.106 A m-2 at 1.58 V vs. RHE have been achieved, which are ~23 and ~36 times higher than that of defect-free counterpart, respectively.

Defect Proliferation in Active Nematic Suspensions

Science.gov (United States)

Mishra, Prashant; Bowick, Mark J.; Giomi, Luca; Marchetti, M. Cristina

2014-03-01

The rich structure of equilibrium nematic suspensions, with their characteristic disclination defects, is modified when active forces come into play. The uniform nematic state is known to be unstable to splay (extensile) or bend (contractile) deformations above a critical activity. At even higher activity the flow becomes oscillatory and eventually turbulent. Using hydrodynamics, we classify the active flow regimes as functions of activity and order parameter friction for both contractile and extensile systems. The turbulent regime is marked by a non-zero steady state density of mobile defect pairs. The defect density itself scales with an ``active Ericksen number,'' defined as the ratio of the rate at which activity is injected into the system to the relaxation rate of orientational deformations. The work at Syracuse University was supported by the NSF on grant DMR-1004789 and by the Syracuse Soft Matter Program.

Density measurements of small amounts of high-density solids by a floatation method

International Nuclear Information System (INIS)

Akabori, Mitsuo; Shiba, Koreyuki

1984-09-01

A floatation method for determining the density of small amounts of high-density solids is described. The use of a float combined with an appropriate floatation liquid allows us to measure the density of high-density substances in small amounts. Using the sample of 0.1 g in weight, the floatation liquid of 3.0 g cm -3 in density and the float of 1.5 g cm -3 in apparent density, the sample densities of 5, 10 and 20 g cm -3 are determined to an accuracy better than +-0.002, +-0.01 and +-0.05 g cm -3 , respectively that correspond to about +-1 x 10 -5 cm 3 in volume. By means of appropriate degassing treatments, the densities of (Th,U)O 2 pellets of --0.1 g in weight and --9.55 g cm -3 in density were determined with an accuracy better than +-0.05 %. (author)

The inelastic contribution to high resolution images of defects

International Nuclear Information System (INIS)

Krivanek, O.L.; Ahn, C.C.; Wood, G.J.

1990-01-01

The importance of the contribution due to inelastically scattered electrons to unfiltered HREM images is examined, with emphasis on imaging of defects in semiconductors. Whenever the low energy loss spectrum contains sharp peaks, the contribution is not featureless. At specimen thickness of a few tens of nm, it may change the image appearance in a major way. The strongest effect occurs in high resolution, medium voltage (200 to 500 kV) electron microscope images of defects at focus values minimizing the contrast of the elastic image in low Z materials such as Al and Si. In higher Z materials or those with no sharp 'plasmons', the contribution is small. 23 refs., 8 figs

Research on high energy density plasmas and applications

International Nuclear Information System (INIS)

1999-01-01

Recently, technologies on lasers, accelerators, and pulse power machines have been significantly advanced and input power density covers the intensity range from 10 10 W/cm 2 to higher than 10 20 W/cm 2 . As the results, high pressure gas and solid targets can be heated up to very high temperature to create hot dense plasmas which have never appeared on the earth. The high energy density plasmas opened up new research fields such as inertial confinement fusion, high brightness X-ray radiation sources, interiors of galactic nucleus,supernova, stars and planets, ultra high pressure condensed matter physics, plasma particle accelerator, X-ray laser, and so on. Furthermore, since these fields are intimately connected with various industrial sciences and technologies, the high energy density plasma is now studied in industries, government institutions, and so on. This special issue of the Journal of Plasma Physics and Nuclear Fusion Research reviews the high energy density plasma science for the comprehensive understanding of such new fields. In May, 1998, the review committee for investigating the present status and the future prospects of high energy density plasma science was established in the Japan Society of Plasma Science and Nuclear Fusion Research. We held three committee meetings to discuss present status and critical issues of research items related to high energy density plasmas. This special issue summarizes the understandings of the committee. This special issue consists of four chapters: They are Chapter 1: Physics important in the high energy density plasmas, Chapter 2: Technologies related to the plasma generation; drivers such as lasers, pulse power machines, particle beams and fabrication of various targets, Chapter 3: Plasma diagnostics important in high energy density plasma experiments, Chapter 4: A variety of applications of high energy density plasmas; X-ray radiation, particle acceleration, inertial confinement fusion, laboratory astrophysics

Dark matter from decaying topological defects

International Nuclear Information System (INIS)

Hindmarsh, Mark; Kirk, Russell; West, Stephen M.

2014-01-01

We study dark matter production by decaying topological defects, in particular cosmic strings. In topological defect or ''top-down'' (TD) scenarios, the dark matter injection rate varies as a power law with time with exponent p−4. We find a formula in closed form for the yield for all p < 3/2, which accurately reproduces the solution of the Boltzmann equation. We investigate two scenarios (p = 1, p = 7/6) motivated by cosmic strings which decay into TeV-scale states with a high branching fraction into dark matter particles. For dark matter models annihilating either by s-wave or p-wave, we find the regions of parameter space where the TD model can account for the dark matter relic density as measured by Planck. We find that topological defects can be the principal source of dark matter, even when the standard freeze-out calculation under-predicts the relic density and hence can lead to potentially large ''boost factor'' enhancements in the dark matter annihilation rate. We examine dark matter model-independent limits on this scenario arising from unitarity and discuss example model-dependent limits coming from indirect dark matter search experiments. In the four cases studied, the upper bound on Gμ for strings with an appreciable channel into TeV-scale states is significantly more stringent than the current Cosmic Microwave Background limits

High Density Nano-Electrode Array for Radiation Detection

International Nuclear Information System (INIS)

Misra, Mano

2010-01-01

Bulk single crystals of Cd 1-x Zn x Te (x=0.04 to x=0.2) compound semiconductor is used for room temperature radiation detection. The production of large volume of Cd 1-x Zn x Te with low defect density is expensive. As a result there is a growing research interest in the production of nanostructured compound semiconductors such as Cd 1-x Zn x Te in an electrochemical route. In this investigation, Cd 1-x Zn x Te ternary compound semiconductor, referred as CZT, was electrodeposited in the form of nanowires onto a TiO 2 nanotubular template from propylene carbonate as the non-aqueous electrolyte, using a pulse-reverse electrodeposition process at 130 C. The template acted as a support in growing ordered nanowire of CZT which acts as a one dimensional conductor. Cyclic Voltammogram (CV) studies were conducted in determining the potentials for the growth of nanowires of uniform stoichiometry. The morphologies and composition of CZT were characterized by using SEM, TEM and XRD. The STEM mapping carried out on the nanowires showed the uniform distribution of Cd, Zn and Te elements. TEM image showed that the nanowires were polycrystalline in nature. The Mott-Schottky analysis carried on the nanowires showed that the nanowires were a p-type semiconductor. The carrier density, band gap and resistivity of the Cd 0.9 Zn 0.1 Te nanowires were 4.29 x 10 13 cm -3 , 1.56 eV and 2.76 x 10 11 (Omega)-cm respectively. The high resistivity was attributed to the presence of deep defect states such as cadmium vacancies or Te antisites which were created by the anodic cycle of the pulse-reverse electrodeposition process. Stacks of series connected CZT nanowire arrays were tested with different bias potentials. The background current was in the order of tens of picoamperes. When exposed to radiation source Amerecium-241 (60 KeV, 4 (micro)Ci), the stacked CZT nanowires arrays showed sensing behavior. The sensitivity of the nanowire arrays increased as the number of stacks increased. The

High Density Nano-Electrode Array for Radiation Detection

Energy Technology Data Exchange (ETDEWEB)

Mano Misra

2010-05-07

Bulk single crystals of Cd1-xZnxTe (x=0.04 to x=0.2) compound semiconductor is used for room temperature radiation detection. The production of large volume of Cd1-xZnxTe with low defect density is expensive. As a result there is a growing research interest in the production of nanostructured compound semiconductors such as Cd1-xZnxTe in an electrochemical route. In this investigation, Cd1-xZnxTe ternary compound semiconductor, referred as CZT, was electrodeposited in the form of nanowires onto a TiO2 nanotubular template from propylene carbonate as the non-aqueous electrolyte, using a pulse-reverse electrodeposition process at 130 ºC. The template acted as a support in growing ordered nanowire of CZT which acts as a one dimensional conductor. Cyclic Voltammogram (CV) studies were conducted in determining the potentials for the growth of nanowires of uniform stoichiometry. The morphologies and composition of CZT were characterized by using SEM, TEM and XRD. The STEM mapping carried out on the nanowires showed the uniform distribution of Cd, Zn and Te elements. TEM image showed that the nanowires were polycrystalline in nature. The Mott-Schottky analysis carried on the nanowires showed that the nanowires were a p-type semiconductor. The carrier density, band gap and resistivity of the Cd0.9Zn0.1Te nanowires were 4.29x1013 cm-3, 1.56 eV and 2.76x1011Ω-cm respectively. The high resistivity was attributed to the presence of deep defect states such as cadmium vacancies or Te antisites which were created by the anodic cycle of the pulse-reverse electrodeposition process. Stacks of series connected CZT nanowire arrays were tested with different bias potentials. The background current was in the order of tens of picoamperes. When exposed to radiation source Amerecium-241 (60 KeV, 4 μCi), the stacked CZT nanowires arrays showed sensing behavior. The sensitivity of the nanowire arrays increased as the number of stacks increased. The preliminary results indicate that the

Study of EUV induced defects on few-layer graphene

NARCIS (Netherlands)

Gao, An; Rizo, P.J.; Zoethout, E.; Scaccabarozzi, L.; Lee, Christopher James; Banine, V.; Bijkerk, Frederik

2012-01-01

Defects in graphene greatly affect its properties1-3. Radiation induced-defects may reduce the long-term survivability of graphene-based nano-devices. Here, we expose few-layer graphene to extreme ultraviolet (EUV, 13.5nm) radiation and show there is a power-dependent increase in defect density. We

Effect of thermal treatment on the density of radiation-induced defects in dielectrics and on the semiconductor surface of silicon MDS structures

International Nuclear Information System (INIS)

Daliev, Kh.S.; Lebedev, A.A.; Ehkke, V.; 3425000DD)

1987-01-01

Isochronous annealing of radiation defects formed under MIS structure irradiation by γ-quanta at the presence of shift stress on a metal electrode is studied. Complex measurements of non-stationary capacitance spectroscopy and volt-farad characteristics (VFC) have shown that a built-in charge and volumetric states (VS) of the dielectric are annealed at 250 deg C, fast surface states (SS) - at 350 deg C, and the characteristic radiation defect in the Si-SiO 2 transition layer is completely annealed only at 400 deg C. Additional VS and SS occurring in the structures at positive shift on the metal electrode under radiation are annealed at 120 deg C, the kinetics of defect annealing at higher temperatures is independent from shift polarity. SS density calculated by VFC is determined in reality by recharging not only SS but some VS of the dielectric in the range of width of the order of 3.5 nm from the surface of the semiconductor

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

KAUST Repository

Wu, Xing

2018-04-14

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

KAUST Repository

Wu, Xing; Yu, Kaihao; Cha, Dong Kyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong

2018-01-01

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

Toward Low-Cost, High-Energy Density, and High-Power Density Lithium-Ion Batteries

Science.gov (United States)

Li, Jianlin; Du, Zhijia; Ruther, Rose E.; AN, Seong Jin; David, Lamuel Abraham; Hays, Kevin; Wood, Marissa; Phillip, Nathan D.; Sheng, Yangping; Mao, Chengyu; Kalnaus, Sergiy; Daniel, Claus; Wood, David L.

2017-09-01

Reducing cost and increasing energy density are two barriers for widespread application of lithium-ion batteries in electric vehicles. Although the cost of electric vehicle batteries has been reduced by 70% from 2008 to 2015, the current battery pack cost (268/kWh in 2015) is still >2 times what the USABC targets (125/kWh). Even though many advancements in cell chemistry have been realized since the lithium-ion battery was first commercialized in 1991, few major breakthroughs have occurred in the past decade. Therefore, future cost reduction will rely on cell manufacturing and broader market acceptance. This article discusses three major aspects for cost reduction: (1) quality control to minimize scrap rate in cell manufacturing; (2) novel electrode processing and engineering to reduce processing cost and increase energy density and throughputs; and (3) material development and optimization for lithium-ion batteries with high-energy density. Insights on increasing energy and power densities of lithium-ion batteries are also addressed.

Sensitive technique for detecting outer defect on tube with remote field eddy current testing

International Nuclear Information System (INIS)

Kobayashi, Noriyasu; Nagai, Satoshi; Ochiai, Makoto; Jimbo, Noboru; Komai, Masafumi

2008-01-01

In the remote field eddy current testing, we proposed the method of enhancing the magnetic flux density in the vicinity of an exciter coil by controlling the magnetic flux direction for increasing the sensitivity of detecting outer defects on a tube and used the flux guide made of a magnetic material for the method. The optimum structural shape of the flux guide was designed by the magnetic field analysis. On the experiment with the application of the flux guide, the magnetic flux density increased by 59% and the artificial defect detection signal became clear. We confirmed the proposed method was effective in a high sensitivity. (author)

Interacting two-level defects as sources of fluctuating high-frequency noise in superconducting circuits

Energy Technology Data Exchange (ETDEWEB)

Mueller, Clemens [ARC Centre of Excellence for Engineered Quantum Systems, The University of Queensland, Brisbane (Australia); Lisenfeld, Juergen [Physikalisches Institut, Karlsruhe Institute of Technology, Karlsruhe (Germany); Shnirman, Alexander [Institut fuer Theory der Kondensierten Materie, Karlsruhe Institute of Technology, Karlsruhe (Germany); LD Landau Institute for Theoretical Physics, Moscow (Russian Federation); Poletto, Stefano [IBM TJ Watson Research Centre, Yorktown Heights (United States)

2016-07-01

Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation time of superconducting qubits fluctuates as a function of time. We present measurements of such fluctuations in a 3D-transmon circuit and develop a qualitative model based on interactions within a bath of background two-level systems (TLS) which emerge from defects in the device material. In our model, the time-dependent noise density acting on the qubit emerges from its near-resonant coupling to high-frequency TLS which experience energy fluctuations due to their interaction with thermally fluctuating TLS at low frequencies. We support the model by providing experimental evidence of such energy fluctuations observed in a single TLS in a phase qubit circuit.

Properties of matter at ultra-high densities

International Nuclear Information System (INIS)

Banerjee, B.; Chitre, S.M.

1975-01-01

The recent discovery of pulsars and their subsequent identification with neutron stars has given a great impetus to the study of the behaviour of matter at ultra high densities. The object of these studies is to calculate the equation of state as a function of density. In this paper, the properties of electrically neutral, cold (T=0) matter at unusually high densities has been reviewed. The physics of the equation of state of such matter divides quite naturally in four density ranges. (i) At the very lowest densities the state of minimum energy is a lattice of 56 Fe atoms. This state persists upto 10 7 g/cm 3 . (ii) In the next density region the nuclei at the lattice sites become neutron rich because the high electron Fermi energy makes inverse beta decay possible. (iii) At a density 4.3 x 10 11 the nuclei become so neutron rich that the neutrons start 'dripping' out of the nuclei and form a gas. This density range is characterised by large, neutron-rich nuclei immersed in a neutron gas. (iv) At a density 2.4 x 10 14 g/cm 3 , the nuclei disappear and a fluid of uniform neutron matter with a small percentage of protons and electrons results. The above four density ranges have been discussed in detail as the equation of state is now well established upto the nuclear density 3 x 10 14 g/cm 3 . The problems of extending the equation of state beyond this density are also touched upon. (author)

Defect-Mediated Lithium Adsorption and Diffusion on Monolayer Molybdenum Disulfide.

Science.gov (United States)

Sun, Xiaoli; Wang, Zhiguo; Fu, Y Q

2015-12-22

Monolayer Molybdenum Disulfide (MoS2) is a promising anode material for lithium ion batteries because of its high capacities. In this work, first principle calculations based on spin density functional theory were performed to investigate adsorption and diffusion of lithium on monolayer MoS2 with defects, such as single- and few-atom vacancies, antisite, and grain boundary. The values of adsorption energies on the monolayer MoS2 with the defects were increased compared to those on the pristine MoS2. The presence of defects causes that the Li is strongly bound to the monolayer MoS2 with adsorption energies in the range between 2.81 and 3.80 eV. The donation of Li 2s electron to the defects causes an enhancement of adsorption of Li on the monolayer MoS2. At the same time, the presence of defects does not apparently affect the diffusion of Li, and the energy barriers are in the range of 0.25-0.42 eV. The presence of the defects can enhance the energy storage capacity, suggesting that the monolayer MoS2 with defects is a suitable anode material for the Li-ion batteries.

High resolution deep level transient spectroscopy and process-induced defects in silicon

International Nuclear Information System (INIS)

Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

2004-01-01

High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

Neutron scattering from a substitutional mass defect

International Nuclear Information System (INIS)

Williams, R.D.; Lovesey, S.W.

1985-06-01

The dynamic structure factor is calculated for a low concentration of light mass scatterers substituted in a cubic crystal matrix. A new numerical method for the exact calculation is demonstrated. A local density of states for the low momentum transfer limit, and the shifts and widths of the oscillator peaks in the high momentum transfer limit are derived. The limitations of an approximation which decouples the defect from the lattice is discussed. (author)

A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)

International Nuclear Information System (INIS)

Albao, Marvin A; Chuang, F-C; Evans, J W

2009-01-01

Deposition on a Si(100) surface and subsequent self-assembly of In atoms into one-dimensional (1D) atomic chains at room temperature is investigated via kinetic Monte Carlo simulation of a suitable atomistic model. Model development is guided by recent experimental observations in which 1D In chains nucleate effectively exclusively at C-type defects, although In atoms can detach from chains. We find that a monotonically decreasing form of the scaled island size distribution (ISD) is consistent with a high defect density which facilitates persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation may be attributed to several factors including low surface diffusion barriers, a high defect density, and relatively weak In-In binding.

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

International Nuclear Information System (INIS)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S.

2015-01-01

A recent low gas-fill density (0.6 mg/cc 4 He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc 4 He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

Science.gov (United States)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S.

2015-04-01

A recent low gas-fill density (0.6 mg/cc 4He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc 4He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth.

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

Energy Technology Data Exchange (ETDEWEB)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)

2015-04-15

A recent low gas-fill density (0.6 mg/cc {sup 4}He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc {sup 4}He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth.

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications

Energy Technology Data Exchange (ETDEWEB)

Anzalone, R., E-mail: ruggero.anzalone@imm.cnr.it; Privitera, S.; Camarda, M.; Alberti, A.; Mannino, G.; Fiorenza, P.; Di Franco, S.; La Via, F.

2015-08-15

Graphical abstract: Figure shows the normalized capacitance (C/C{sub OX}) versus voltage (V) for the MOS capacitors on 3 μm, 7 μm thick 3C–SiC films and silicon (as reference), respectively. The shift of the curve respect to the reference is due to the presence of fixed and/or trapped charge in the oxide and interface trapped charge, due to the presence of interface states of density D{sub it}, located at the semiconductor/oxide interface. - Highlights: • We analyzed the flat-band voltage shift for different semiconductor epi-thickness. • The interface state density as a function of epi-defects was evaluated. • We observed the relationship between XRD and C–V results. • Epitaxial thickness influence on interface state density was evaluated. - Abstract: The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10{sup 11} cm{sup −2} eV{sup −1} was observed with improving the crystalline quality.

Electron irradiation effects and recovery of defect clusters in TiC through high voltage electron microscope

International Nuclear Information System (INIS)

Iseki, Michio; Kirihara, Tomoo; Ushijima, Susumu; Ohashi, Hideki.

1984-01-01

Titanium carbide(TiCsub(0.8)) prepared by plasma-jet melting was irradiated to an electron dose less than 6x10 26 e/m 2 from room temperature to 800 0 C. The number density and average size of the defect clusters formed at irradiation temperatures below 400 0 C were less than those formed above 600 0 C. Since TiCsub(0.8) has an order structure of carbon below around 600 0 C, the ordered phase is more resistant to radiation than the disordered one in higher temperatures. The clusters decrease in number density and develop to dislocation loops during post irradiation annealing above 1,000 0 C. The burgers vector of the loops was determined as a/2 . There were two temperature region for the recovery of the defect clusters. It is conceivable that the first one appeared in the temperature region around 600 0 C caused by migration of carbon vacancies, and the second one appeared above 1,000 0 C by migration of titanium vacancies. (author)

Photoionization and High Density Gas

Science.gov (United States)

Kallman, T.; Bautista, M.; White, Nicholas E. (Technical Monitor)

2002-01-01

We present results of calculations using the XSTAR version 2 computer code. This code is loosely based on the XSTAR v.1 code which has been available for public use for some time. However it represents an improvement and update in several major respects, including atomic data, code structure, user interface, and improved physical description of ionization/excitation. In particular, it now is applicable to high density situations in which significant excited atomic level populations are likely to occur. We describe the computational techniques and assumptions, and present sample runs with particular emphasis on high density situations.

Investigation of radiation defects in InSb formed by charged high energy nuclear particles

International Nuclear Information System (INIS)

Vikhlij, G.A.; Karpenko, A.Ya.; Litovchenko, P.G.; Tarabrova, L.I.; Groza, A.A.

1990-01-01

A possibility of creation of high concentrations of radiation defects in the bulk of InSb samples by 47 MeV protons and 80 MeV alpha particles is considered. Dose dependences of electroconductivity, optical absorption spectra as well as temperature and field relations of galvanomagnetic properties of samples with defects are investigated. Annealing stages and electrical properties of defects annealed at these stages are determined. 17 refs.; 7 figs

Defect Engineering and Interface Phenomena in Tin Oxide

KAUST Repository

Albar, Arwa

2017-04-05

The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

Electronic DC transformer with high power density

NARCIS (Netherlands)

Pavlovský, M.

2006-01-01

This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

Microstructural defects in EUROFER 97 after different neutron irradiation conditions

Directory of Open Access Journals (Sweden)

Christian Dethloff

2016-12-01

Full Text Available Characterization of irradiation induced microstructural evolution is essential for assessing the applicability of structural steels like the Reduced Activation Ferritic/Martensitic steel EUROFER 97 in upcoming fusion reactors. In this work Transmission Electron Microscopy (TEM is used to determine the defect microstructure after different neutron irradiation conditions. In particular dislocation loops, voids and precipitates are analyzed concerning defect nature, density and size distribution after irradiation to 15 dpa at 300 °C in the mixed spectrum High Flux Reactor (HFR. New results are combined with previously obtained data from irradiation in the fast spectrum BOR-60 reactor (15 and 32 dpa, 330 °C, which allows for assessment of dose and dose rate effects on the aforementioned irradiation induced defects and microstructural characteristics.

Condensation energy density in Bi-2212 superconductors

International Nuclear Information System (INIS)

Matsushita, Teruo; Kiuchi, Masaru; Haraguchi, Teruhisa; Imada, Takeki; Okamura, Kazunori; Okayasu, Satoru; Uchida, Satoshi; Shimoyama, Jun-ichi; Kishio, Kohji

2006-01-01

The relationship between the condensation energy density and the anisotropy parameter, γ a , has been derived for Bi-2212 superconductors in various anisotropic states by analysing the critical current density due to columnar defects introduced by heavy ion irradiation. The critical current density depended on the size of the defects, determined by the kind and irradiation energy of the ions. A significantly large critical current density of 17.0 MA cm -2 was obtained at 5 K and 0.1 T even for the defect density of a matching field of 1 T in a specimen irradiated with iodine ions. The dependence of the critical current density on the size of the defects agreed well with the prediction from the summation theory of pinning forces, and the condensation energy density could be obtained consistently from specimens irradiated with different ions. The condensation energy density obtained increased with decreasing γ a over the entire range of measurement temperature, and reached about 60% of the value for the most three-dimensional Y-123 observed by Civale et al at 5 K. This gives the reason for the very strong pinning in Bi-2212 superconductors at low temperatures. The thermodynamic critical field obtained decreased linearly with increasing temperature and extrapolated to zero at a certain characteristic temperature, T * , lower than the critical temperature, T c . T * , which seems to be associated with the superconductivity in the block layers, was highest for the optimally doped specimen. This shows that the superconductivity becomes more inhomogeneous as the doped state of a superconductor deviates from the optimum condition

Spontaneous magnetization in high-density quark matter

DEFF Research Database (Denmark)

Tsue, Yasuhiko; da Providência, João; Providência, Constanca

2015-01-01

It is shown that spontaneous magnetization occurs due to the anomalous magnetic moments of quarks in high-density quark matter under the tensor-type four-point interaction. The spin polarized condensate for each flavor of quark appears at high baryon density, which leads to the spontaneous magnet...

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

High Energy Density Sciences with High Power Lasers at SACLA

Science.gov (United States)

Kodama, Ryosuke

2013-10-01

One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

Electronic properties of graphene with single vacancy and Stone-Wales defects

International Nuclear Information System (INIS)

Zaminpayma, Esmaeil; Razavi, Mohsen Emami; Nayebi, Payman

2017-01-01

Highlights: • The electronic properties of graphene device with single vacancy (SV) and Stone-Wales (SW) defect have been studied. • The first principles calculations have been performed based on self-consistent charge density functional tight-binding. • The density of state, current voltage curves of pure graphene and graphene with SV and SW defects have been investigated. • Transmission spectrum of pristine graphene device and graphene with SV and SW defects has been examined. - Abstract: The first principles calculations have been performed based on self-consistent charge density functional tight-binding in order to examine the electronic properties of graphene with single vacancy (SV) and Stone-Wales (SW) defects. We have optimized structures of pristine graphene and graphene with SV and SW defects. The bond lengths, current-voltage curve and transmission probability have been calculated. We found that the bond length for relaxed graphene is 1.43 Å while for graphene with SV and SW defects the bond lengths are 1.41 Å and 1.33 Å, respectively. For the SV defect, the arrangement of atoms with three nearest neighbors indicates sp_2 bonding. While for SW defect, the arrangement of atoms suggests nearly sp bonding. From the current-voltage curve for graphene with defects we have determined that the behavior of the I–V curves is nonlinear. It is also found that the SV and SW defects cause to decrease the current compared to the pristine graphene case. Furthermore, the single vacancy defect reduces the current more than the Stone-Wales defect. Moreover, we observed that by increasing the voltage from zero to 1 V new peaks near Fermi level in the transmission probability curves have been created.

Electronic properties of graphene with single vacancy and Stone-Wales defects

Energy Technology Data Exchange (ETDEWEB)

Zaminpayma, Esmaeil [Physics Group, Qazvin Branch, Islamic Azad University, Qazvin (Iran, Islamic Republic of); Razavi, Mohsen Emami, E-mail: razavi246@gmail.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, P.O. Box 14665-678, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of)

2017-08-31

Highlights: • The electronic properties of graphene device with single vacancy (SV) and Stone-Wales (SW) defect have been studied. • The first principles calculations have been performed based on self-consistent charge density functional tight-binding. • The density of state, current voltage curves of pure graphene and graphene with SV and SW defects have been investigated. • Transmission spectrum of pristine graphene device and graphene with SV and SW defects has been examined. - Abstract: The first principles calculations have been performed based on self-consistent charge density functional tight-binding in order to examine the electronic properties of graphene with single vacancy (SV) and Stone-Wales (SW) defects. We have optimized structures of pristine graphene and graphene with SV and SW defects. The bond lengths, current-voltage curve and transmission probability have been calculated. We found that the bond length for relaxed graphene is 1.43 Å while for graphene with SV and SW defects the bond lengths are 1.41 Å and 1.33 Å, respectively. For the SV defect, the arrangement of atoms with three nearest neighbors indicates sp{sub 2} bonding. While for SW defect, the arrangement of atoms suggests nearly sp bonding. From the current-voltage curve for graphene with defects we have determined that the behavior of the I–V curves is nonlinear. It is also found that the SV and SW defects cause to decrease the current compared to the pristine graphene case. Furthermore, the single vacancy defect reduces the current more than the Stone-Wales defect. Moreover, we observed that by increasing the voltage from zero to 1 V new peaks near Fermi level in the transmission probability curves have been created.

The high density and high βpol disruption mechanism on TFTR

International Nuclear Information System (INIS)

Fredrickson, E.D.; Manickam, J.; McGuire, K.M.; Monticello, D.; Nagayama, Y.; Park, W.; Taylor, G.

1992-01-01

Studies of disruptions on TFTR have been extended to include high density disruptions as well as the high β pol disruptions. The data strongly suggests that the (m,n)=(1,1) mode plays an important role in both types of disruptions. Further, for the first time, it is unambiguously shown, using a fast electron cyclotron emission (ECE) instrument for the electron temperature profile measurements, that the (m,n)=(1,1) precursor to the high density disruptions has a 'cold bubble' structure. The precursor to the major disruption at high density resembles the 'vacuum bubble' model of disruptions first proposed by Kadomtsev and Pogutse. (author) 2 refs., 2 figs

Calibrating a multi-model approach to defect production in high energy collision cascades

International Nuclear Information System (INIS)

Heinisch, H.L.; Singh, B.N.; Diaz de la Rubia, T.

1994-01-01

A multi-model approach to simulating defect production processes at the atomic scale is described that incorporates molecular dynamics (MD), binary collision approximation (BCA) calculations and stochastic annealing simulations. The central hypothesis is that the simple, fast computer codes capable of simulating large numbers of high energy cascades (e.g., BCA codes) can be made to yield the correct defect configurations when their parameters are calibrated using the results of the more physically realistic MD simulations. The calibration procedure is investigated using results of MD simulations of 25 keV cascades in copper. The configurations of point defects are extracted from the MD cascade simulations at the end of the collisional phase, thus providing information similar to that obtained with a binary collision model. The MD collisional phase defect configurations are used as input to the ALSOME annealing simulation code, and values of the ALSOME quenching parameters are determined that yield the best fit to the post-quenching defect configurations of the MD simulations. ((orig.))

Effect of interaction between irradiation-induced defects and intrinsic defects in the pinning improvement of neutron irradiated YBaCuO sample

International Nuclear Information System (INIS)

Topal, Ugur; Sozeri, Huseyin; Yavuz, Hasbi

2004-01-01

Interaction between the intrinsic (native) defects and the irradiation-induced defects created by neutron irradiation was examined for the YBCO sample. For this purpose, non-superconducting Y-211 phase was included to the Y-123 samples at different contents as a source of large pinning center. The critical current density enhancement with the irradiation for these samples were analysed and then the role of defects on pinning improvement was discussed

Effect of interaction between irradiation-induced defects and intrinsic defects in the pinning improvement of neutron irradiated YBaCuO sample

Energy Technology Data Exchange (ETDEWEB)

Topal, Ugur; Sozeri, Huseyin; Yavuz, Hasbi

2004-08-01

Interaction between the intrinsic (native) defects and the irradiation-induced defects created by neutron irradiation was examined for the YBCO sample. For this purpose, non-superconducting Y-211 phase was included to the Y-123 samples at different contents as a source of large pinning center. The critical current density enhancement with the irradiation for these samples were analysed and then the role of defects on pinning improvement was discussed.

Issues in first-principles calculations for defects in semiconductors and oxides

International Nuclear Information System (INIS)

Nieminen, Risto M

2009-01-01

Recent advances in density-functional theory (DFT) calculations of defect electronic properties in semiconductors and insulators are discussed. In particular, two issues are addressed: the band-gap underestimation of standard density-functional methods with its harmful consequences for the positioning of defect-related levels in the band-gap region, and the slow convergence of calculated defect properties when the periodic supercell approach is used. Systematic remedies for both of these deficiencies are now available, and are being implemented in the context of popular DFT codes. This should help in improving the parameter-free accuracy and thus the predictive power of the methods to enable unambiguous explanation of defect-related experimental observations. These include not only the various fingerprint spectroscopies for defects but also their thermochemistry and dynamics, i.e. the temperature-dependent concentration and diffusivities of defects under various doping conditions and in different stoichiometries

Electrode/Dielectric Strip For High-Energy-Density Capacitor

Science.gov (United States)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Defect spectroscopy of single ZnO microwires

Science.gov (United States)

Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

2014-04-01

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

Topological defect densities in type-I superconducting phase transitions

International Nuclear Information System (INIS)

Paramos, J.; Bertolami, O.; Girard, T.A.; Valko, P.

2003-01-01

We examine the consequences of a cubic term added to the mean-field potential of Ginzburg-Landau theory to describe first-order superconducting phase transitions. Constraints on its existence are obtained from experiment, which are used to assess its impact on topological defect creation. We find no fundamental changes in either the Kibble-Zurek or Hindmarsh-Rajantie predictions

Creation of excitations and defects in insulating materials by high-current-density electron beams of nanosecond pulse duration

International Nuclear Information System (INIS)

Vaisburd, D.I.; Evdokimov, K.E.

2005-01-01

The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The ''instantaneous'' distribution of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10 -14 /10 -12 s: high-energy conductivity, intraband luminescence, etc. A technique was developed for calculation of the ''instantaneous'' distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband luminescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and dislocations. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nucleation of voids and other irradiation-produced defect aggregates

International Nuclear Information System (INIS)

Wiedersich, H.; Katz, J.L.

1976-01-01

The nucleation of defect clusters in crystalline solids from radiation-produced defects is different from the usual nucleation processes in one important aspect: the condensing defects, interstitial atoms and vacancies, can mutually annihilate and are thus similar to matter and antimatter. The nucleation process is described as the simultaneous reaction of vacancies and interstitials (and gas atoms if present) with embryos of all sizes. The reaction rates for acquisition of point defects (and gas atoms) are calculated from their respective jump frequencies and concentrations in the supersaturated system. The reaction rates for emission of point defects are derived from the free energies of the defect clusters in the thermodynamic equilibrium system, i.e., the system without excess point defects. This procedure differs from that used in conventional nucleation theory and permits the inclusion of the ''antimatter'' defect into the set of reaction-rate equations in a straightforward manner. The method is applied to steady-state nucleation, during irradiation, of both dislocation loops and voids in the absence and in the presence of immobile and mobile gas. The predictions of the nucleation theory are shown to be in qualitative agreement with experimental observations, e.g., void densities increase with increasing displacement rates; gases such as helium enhance void nucleation; at low displacement rates and at high temperatures the presence of gas is essential to void formation. For quantitative predictions, the theory must be extended to include the termination of nucleation

Laser fusion and high energy density science

International Nuclear Information System (INIS)

Kodama, Ryosuke

2005-01-01

High-power laser technology is now opening a variety of new fields of science and technology using laser-produced plasmas. The laser plasma is now recognized as one of the important tools for the investigation and application of matter under extreme conditions, which is called high energy density science. This chapter shows a variety of applications of laser-produced plasmas as high energy density science. One of the more attractive industrial and science applications is the generation of intense pulse-radiation sources, such as the generation of electro-magnetic waves in the ranges of EUV (Extreme Ultra Violet) to gamma rays and laser acceleration of charged particles. The laser plasma is used as an energy converter in this regime. The fundamental science applications of high energy density physics are shown by introducing laboratory astrophysics, the equation of state of high pressure matter, including warm dense matter and nuclear science. Other applications are also presented, such as femto-second laser propulsion and light guiding. Finally, a new systematization is proposed to explore the possibility of the high energy density plasma application, which is called high energy plasma photonics''. This is also exploration of the boundary regions between laser technology and beam optics based on plasma physics. (author)

High defect stage, contralateral defects, and poor flexibility are negative predictive factors of bone union in pediatric and adolescent athletes with spondylolysis.

Science.gov (United States)

Yamazaki, Kazufumi; Kota, Shintaro; Oikawa, Daisuke; Suzuki, Yoshiji

2018-01-01

To identify predisposition to spondylolysis and physical characteristics associated with "bone union" following conservative spondylolysis treatment among pediatric and adolescent athletes. We retrospectively analyzed pediatric and adolescent athletes with spondylolysis who underwent conservative treatment and rehabilitation for three or more consecutive months following sports activity cessation. Patients with terminal spondylolysis or who did not discontinue sports activities were excluded. We compared physical fitness factors in the union and nonunion groups and examined the association between bone union and spondylolysis severity by logistic regression analysis. Of 183 patients with spondylolysis who underwent rehabilitation over a four-year period, 127 patients with 227 defects were included in the final analysis. Bone union was achieved in 66.5% (151/227) of the pars interarticularis defects and 70.1% (89/127) of the patients. On multivariate analysis, stage of pars interarticularis defect (odds ratio [OR], 0.26;p = 0.0027), stage of contralateral pars interarticularis defect (OR, 0.51;p = 0.00026), and straight leg-raising test (OR, 1.06;p = 0.028) were significantly associated with bone union. High defect stage, stage of the contralateral pars interarticularis defect, and poor flexibility were negative prognostic factors of bone healing in athletes with spondylolysis. J. Med. Invest. 65:126-130, February, 2018.

Operation and control of high density tokamak reactors

International Nuclear Information System (INIS)

Attenberger, S.E.; McAlees, D.G.

1976-01-01

The incentive for high density operation of a tokamak reactor was discussed. It is found that high density permits ignition in a relatively small, moderately elongated plasma with a moderate magnetic field strength. Under these conditions, neutron wall loadings approximately 4 MW/m 2 must be tolerated. The sensitivity analysis with respect to impurity effects shows that impurity control will most likely be necessary to achieve the desired plasma conditions. The charge exchange sputtered impurities are found to have an important effect so that maintaining a low neutral density in the plasma is critical. If it is assumed that neutral beams will be used to heat the plasma to ignition, high energy injection is required (approximately 250 keV) when heating is accompished at full density. A scenario is outlined where the ignition temperature is established at low density and then the fueling rate is increased to attain ignition. This approach may permit beams with energies being developed for use in TFTR to be successfully used to heat a high density device of the type described here to ignition

High-contrast coronagraph performance in the presence of focal plane mask defects

Science.gov (United States)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatham; Cady, Eric

2014-08-01

We have carried out a study of the performance of high-contrast coronagraphs in the presence of mask defects. We have considered the effects of opaque and dielectric particles of various dimensions, as well as systematic mask fabrication errors and the limitations of material properties in creating dark holes. We employ sequential deformable mirrors to compensate for phase and amplitude errors, and show the limitations of this approach in the presence of coronagraph image-mask defects.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

High density high-TC ceramic superconductors by hot pressing

International Nuclear Information System (INIS)

Mak, S.; Chaklader, A.C.D.

1989-01-01

High density and high T C superconductor specimens, YBa 2 Cu 3 O x , have been produced by hot-pressing. The factors studied are the effect of hot pressing on the density, the oxygen stoichiometry, the crystal structure, and the critical temperature. Hot pressing followed by heat treatment increased the density of the specimen to 93%. The hot pressing itself did not significantly affect the oxygen content in the specimen, and although the crystal structure appeared to be orthorhombic, the specimens were not superconducting above liquid nitrogen temperature. The superconductivity was restored after head treatment in oxygen. The highest critical temperature (T C ) of the hot pressed pellets was 82K, which was slightly lower than the T C that could be obtained with the cold pressed/sintered pellets. (6 refs., 5 figs., tab.)

Optical transmission properties of an anisotropic defect cavity in one-dimensional photonic crystal

Science.gov (United States)

Ouchani, Noama; El Moussaouy, Abdelaziz; Aynaou, Hassan; El Hassouani, Youssef; El Boudouti, El Houssaine; Djafari-Rouhani, Bahram

2018-01-01

We investigate theoretically the possibility to control the optical transmission in the visible and infrared regions by a defective one dimensional photonic crystal formed by a combination of a finite isotropic superlattice and an anisotropic defect layer. The Green's function approach has been used to derive the reflection and the transmission coefficients, as well as the densities of states of the optical modes. We evaluate the delay times of the localized modes and we compare their behavior with the total densities of states. We show that the birefringence of an anisotropic defect layer has a significant impact on the behavior of the optical modes in the electromagnetic forbidden bands of the structure. The amplitudes of the defect modes in the transmission and the delay time spectrum, depend strongly on the position of the cavity layer within the photonic crystal. The anisotropic defect layer induces transmission zeros in one of the two components of the transmission as a consequence of a destructive interference of the two polarized waves within this layer, giving rise to negative delay times for some wavelengths in the visible and infrared light ranges. This property is a typical characteristic of the anisotropic photonic layer and is without analogue in their counterpart isotropic defect layers. This structure offers several possibilities for controlling the frequencies, transmitted intensities and the delay times of the optical modes in the visible and infrared regions. It can be a good candidate for realizing high-precision optical filters.

Feedback controlled, reactor relevant, high-density, high-confinement scenarios at ASDEX Upgrade

Science.gov (United States)

Lang, P. T.; Blanken, T. C.; Dunne, M.; McDermott, R. M.; Wolfrum, E.; Bobkov, V.; Felici, F.; Fischer, R.; Janky, F.; Kallenbach, A.; Kardaun, O.; Kudlacek, O.; Mertens, V.; Mlynek, A.; Ploeckl, B.; Stober, J. K.; Treutterer, W.; Zohm, H.; ASDEX Upgrade Team

2018-03-01

One main programme topic at the ASDEX Upgrade all-metal-wall tokamak is development of a high-density regime with central densities at reactor grade level while retaining high-confinement properties. This required development of appropriate control techniques capable of coping with the pellet tool, a powerful means of fuelling but one which presented challenges to the control system for handling of related perturbations. Real-time density profile control was demonstrated, raising the core density well above the Greenwald density while retaining the edge density in order to avoid confinement losses. Recently, a new model-based approach was implemented that allows direct control of the central density. Investigations focussed first on the N-seeding scenario owing to its proven potential to yield confinement enhancements. Combining pellets and N seeding was found to improve the divertor buffering further and enhance the operational range accessible. For core densities up to about the Greenwald density, a clear improvement with respect to the non-seeding reference was achieved; however, at higher densities this benefit is reduced. This behaviour is attributed to recurrence of an outward shift of the edge density profile, resulting in a reduced peeling-ballooning stability. This is similar to the shift seen during strong gas puffing, which is required to prevent impurity influx in ASDEX Upgrade. First tests indicate that highly-shaped plasma configurations like the ITER base-line scenario, respond very well to pellet injection, showing efficient fuelling with no measurable impact on the edge density profile.

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Energy Technology Data Exchange (ETDEWEB)

Massabuau, F. C.-P., E-mail: fm350@cam.ac.uk; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Materials Science and Metallurgy, University of Cambridge, 22 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Davies, M. J.; Dawson, P. [Photon Science Institute, School of Physics and Astronomy, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kovács, A.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Leo-Brandt- Straße, D-52425 Jülich (Germany); Williams, T.; Etheridge, J. [Monash Centre for Electron Microscopy, Monash University, Clayton Campus, VIC 3800 (Australia); Hopkins, M. A.; Allsopp, D. W. E. [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)

2014-09-15

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

International Nuclear Information System (INIS)

Massabuau, F. C.-P.; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.; Davies, M. J.; Dawson, P.; Kovács, A.; Dunin-Borkowski, R. E.; Williams, T.; Etheridge, J.; Hopkins, M. A.; Allsopp, D. W. E.

2014-01-01

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

Electron paramagnetic resonance of intrinsic point defects in GaAs following plastic deformation

International Nuclear Information System (INIS)

Benakki-Stiet, S.

1988-01-01

Defects generated in GaAs by a plastic deformation were studied to see if these defects, particularly anionic antisites associated with the deep donor EL2, were the same as those presented in the raw growth material, or the same as those which can be created in a high concentration by electron or neutron irradiation. Results show that there are different types of anionic antisites, so the subset associated with EL2 was identified. The apparent correlation between EL2 and dislocation density is discussed [fr

High Density Digital Data Storage System

Science.gov (United States)

Wright, Kenneth D., II; Gray, David L.; Rowland, Wayne D.

1991-01-01

The High Density Digital Data Storage System was designed to provide a cost effective means for storing real-time data from the field-deployable digital acoustic measurement system. However, the high density data storage system is a standalone system that could provide a storage solution for many other real time data acquisition applications. The storage system has inputs for up to 20 channels of 16-bit digital data. The high density tape recorders presently being used in the storage system are capable of storing over 5 gigabytes of data at overall transfer rates of 500 kilobytes per second. However, through the use of data compression techniques the system storage capacity and transfer rate can be doubled. Two tape recorders have been incorporated into the storage system to produce a backup tape of data in real-time. An analog output is provided for each data channel as a means of monitoring the data as it is being recorded.

High-density-plasma diagnostics in magnetic-confinement fusion

International Nuclear Information System (INIS)

Jahoda, F.C.

1982-01-01

The lectures will begin by defining high density in the context of magnetic confinement fusion research and listing some alternative reactor concepts, ranging from n/sub e/ approx. 2 x 10 14 cm -3 to several orders of magnitude greater, that offer potential advantages over the main-line, n/sub e/ approx. 1 x 10 14 cm -3 , Tokamak reactor designs. The high density scalings of several major diagnostic techniques, some favorable and some disadvantageous, will be discussed. Special emphasis will be given to interferometric methods, both electronic and photographic, for which integral n/sub e/dl measurements and associated techniques are accessible with low wavelength lasers. Reactor relevant experience from higher density, smaller dimension devices exists. High density implies high β, which implies economies of scale. The specialized features of high β diagnostics will be discussed

Performance potential of low-defect density silicon thin-film solar cells obtained by electron beam evaporation and laser crystallisation

Directory of Open Access Journals (Sweden)

Kim K. H.

2013-01-01

Full Text Available A few microns thick silicon films on glass coated with a dielectric intermediate layer can be crystallised by a single pass of a line-focused diode laser beam. Under favorable process conditions relatively large linear grains with low defect density are formed. Most grain boundaries are defect-free low-energy twin-boundaries. Boron-doped laser crystallised films are processed into solar cells by diffusing an emitter from a phosphorous spin-on-dopant source, measuring up to 539 mV open-circuit voltage prior to metallisation. After applying a point-contact metallisation the best cell achieves 7.8% energy conversion efficiency, open-circuit voltage of 526 mV and short-circuit current of 26 mA/cm2. The efficiency is significantly limited by a low fill-factor of 56% due to the simplified metallisation approach. The internal quantum efficiency of laser crystallised cells is consistent with low front surface recombination. By improving cell metallisation and enhancing light-trapping the efficiencies of above 13% can be achieved.

A first principles study of native defects in alpha-quartz

CERN Document Server

Roma, G

2003-01-01

We present a study of several neutral and charged oxygen and silicon defects in alpha-quartz. We performed plane waves pseudopotential calculations in the framework of density functional theory in the local density approximation. We will show the structures that we obtained for vacancies and interstitials in several charge states and the corresponding formation energies. We discuss the reciprocal dependence of formation energies of charged defects (and thus concentrations) and the electron chemical potential on each other and we determine the latter by iterative self-consistent solution of the equation imposing charge neutrality. Results on defect concentrations, their dependence on oxygen partial pressure, and self-doping effects are presented.

Computed tomography on a defective CANDU fuel pencil end cap

International Nuclear Information System (INIS)

Lupton, L.R.

1985-09-01

Five tomographic slices through a defective end cap from a CANDU fuel pencil have been generated using a Co-60 source and a first generation translate-rotate tomography scanner. An anomaly in the density distribution that is believed to have resulted from the defect has been observed. However, with the 0.30 mm spatial resolution used, it has not been possible to state unequivocally whether the change in density is caused by a defect in the weld or a statistical anomaly in the data. It is concluded that a microtomography system, with a spatial resolution in the range of 0.1 mm, could detect the flaw

Transmission electron microscopy of defects and internal fields in GaN structures

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, H

2001-07-01

The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10{sup 9}/cm{sup 2}. The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In{sub 0.1}Ga{sub 0.9}N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

Transmission electron microscopy of defects and internal fields in GaN structures

International Nuclear Information System (INIS)

Mokhtari, H.

2001-07-01

The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10 9 /cm 2 . The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In 0.1 Ga 0.9 N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

Lattice defect investigation of nanostructured ECAP-Cu by means of x-ray line profile analysis, calorimetry and electrical resistometry

International Nuclear Information System (INIS)

Schafler, E.; Steiner, G.; KEXrber, M.; Zehetbauer, M.J.; Korznikova, E.

2005-01-01

Full text: Cu rods have been deformed by Equal Channel Angular Pressing (ECAP) up to shear strains γ ∼ 5 while applying various deformation paths A, B c and C. ECAP processed materials show a microstructure with grain sizes in the nanometer range and a high density of lattice defects. X-ray Bragg Profile Analyses (XPA), Differential Scanning Calorimetry (DSC) as well as Residual Electrical Resistivity (RER) measurements have been performed, in order to detect the densities of various deformation induced lattice defects and/or their arrangements. The results have been analyzed in terms of annealing of deformation induced dislocations and vacancies (vacancy agglomerates). Compared to conventional cold work procedures, deformation by ECAP achieves a strongly enhanced concentration of vacancy type defects. (author)

Probing topological relations between high-density and low-density regions of 2MASS with hexagon cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Yongfeng [American Physical Society, San Diego, CA (United States); Xiao, Weike, E-mail: yongfeng.wu@maine.edu [Department of Astronautics Engineering, Harbin Institute of Technology, P.O. Box 345, Heilongjiang Province 150001 (China)

2014-02-01

We introduced a new two-dimensional (2D) hexagon technique for probing the topological structure of the universe in which we mapped regions of the sky with high and low galaxy densities onto a 2D lattice of hexagonal unit cells. We defined filled cells as corresponding to high-density regions and empty cells as corresponding to low-density regions. The numbers of filled cells and empty cells were kept the same by controlling the size of the cells. By analyzing the six sides of each hexagon, we could obtain and compare the statistical topological properties of high-density and low-density regions of the universe in order to have a better understanding of the evolution of the universe. We applied this hexagonal method to Two Micron All Sky Survey data and discovered significant topological differences between the high-density and low-density regions. Both regions had significant (>5σ) topological shifts from both the binomial distribution and the random distribution.

Topological defects from the multiverse

Science.gov (United States)

Zhang, Jun; Blanco-Pillado, Jose J.; Garriga, Jaume; Vilenkin, Alexander

2015-05-01

Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

Topological defects from the multiverse

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jun [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States); Blanco-Pillado, Jose J. [Department of Theoretical Physics, University of the Basque Country UPV/EHU, 48080 Bilbao (Spain); IKERBASQUE, Basque Foundation for Science, 48013, Bilbao (Spain); Garriga, Jaume [Departament de Fisica Fonamental i Institut de Ciencies del Cosmos, Universitat de Barcelona, Marti i Franques, 1, 08028, Barcelona (Spain); Vilenkin, Alexander [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States)

2015-05-28

Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

Topological defects from the multiverse

International Nuclear Information System (INIS)

Zhang, Jun; Vilenkin, Alexander; Blanco-Pillado, Jose J.; Garriga, Jaume

2015-01-01

Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble

Differentiation between grade 3 and grade 4 articular cartilage defects of the knee: Fat-suppressed proton density-weighted versus fat-suppressed three-dimensional gradient-echo MRI

Energy Technology Data Exchange (ETDEWEB)

Lee, So Yeon; Jee, Won-Hee; Kim, Sun Ki (Dept. of Radiology, Seoul St Mary' s Hospital, Catholic Univ. of Korea, Seoul (Korea)), e-mail: whjee@catholic.ac.kr; Koh, In-Jun (Dept. of Joint Reconstruction Center, Seoul National Univ. Bundang Hospital, Seoul (Korea)); Kim, Jung-Man (Dept. of Orthopedic Surgery, Seoul St Mary' s Hospital, Catholic Univ. of Korea, Seoul (Korea))

2010-05-15

Background: Fat-suppressed (FS) proton density (PD)-weighted magnetic resonance imaging (MRI) and FS three-dimensional (3D) gradient-echo imaging such as spoiled gradient-recalled (SPGR) sequence have been established as accurate methods for detecting articular cartilage defects. Purpose: To retrospectively compare the diagnostic efficacy between FS PD-weighted and FS 3D gradient-echo MRI for differentiating between grade 3 and grade 4 cartilage defects of the knee with arthroscopy as the standard of reference. Material and Methods: Twenty-one patients who had grade 3 or 4 cartilage defects in medial femoral condyle at arthroscopy and knee MRI were included in this study: grade 3, >50% cartilage defects; grade 4, full thickness cartilage defects exposed to the bone. Sagittal FS PD-weighted MR images and FS 3D gradient-echo images with 1.5 T MR images were independently graded for the cartilage abnormalities of medial femoral condyle by two musculoskeletal radiologists. Statistical analysis was performed by Fisher's exact test. Inter-observer agreement in grading of cartilage was assessed using ? coefficients. Results: Arthroscopy revealed grade 3 defects in 17 patients and grade 4 defects in 4 patients in medial femoral condyles. For FS 3D gradient-echo images grade 3 defects were graded as grade 3 (n=15) and grade 4 (n=2), and all grade 4 defects (n=4) were correctly graded. However, for FS PD-weighted MR images all grade 3 defects were misinterpreted as grade 1 (n=1) and grade 4 (n=16), whereas all grade 4 defects (n=4) were correctly graded. FS 3D gradient-echo MRI could differentiate grade 3 from grade 4 defects (P=0.003), whereas FS PD-weighted imaging could not (P=1.0). Inter-observer agreement was substantial (?=0.70) for grading of cartilage using FS PD-weighted imaging, whereas it was moderate (?=0.46) using FS 3D gradient-echo imaging. Conclusion: FS 3D gradient-echo MRI is more helpful for differentiating between grade 3 and grade 4 cartilage

First-principles study on oxidation effects in uranium oxides and high-pressure high-temperature behavior of point defects in uranium dioxide

Science.gov (United States)

Geng, Hua Y.; Song, Hong X.; Jin, K.; Xiang, S. K.; Wu, Q.

2011-11-01

Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy becomes predominant in overstoichiometric UO2 with the aid of the contribution from lattice vibrations, while compression favors oxygen defects and suppresses uranium vacancy greatly. At ambient pressure, however, the experimental observation of predominant oxygen defects in this regime can be reproduced only in a form of cuboctahedral clusters, underlining the importance of defect clustering in UO2+x. Making use of the point defect model, an equation of state for nonstoichiometric oxides is established, which is then applied to describe the shock Hugoniot of UO2+x. Furthermore, the oxidization and compression behavior of uranium monoxide, triuranium octoxide, uranium trioxide, and a series of defective UO2 at 0 K are investigated. The evolution of mechanical properties and electronic structures with an increase of the oxidation degree are analyzed, revealing the transition of the ground state of uranium oxides from metallic to Mott insulator and then to charge-transfer insulator due to the interplay of strongly correlated effects of 5f orbitals and the shift of electrons from uranium to oxygen atoms.

Towards high-density matter with relativistic heavy-ion collisions

International Nuclear Information System (INIS)

Nagamiya, Shoji.

1990-04-01

Recent progress in nucleus-nucleus collisions at BNL and CERN suggests a hint that the formation of high-density nuclear matter could be possible with relativistic heavy-ion beams. What is the maximum density that can be achieved by heavy-ion collisions? Are there data which show evidence or hints on the formation of high density matter? Why is the research of high-density interesting? How about the future possibilities on this subject? These points are discussed. (author)

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm−2

International Nuclear Information System (INIS)

Tian, Pengfei; Liu, Ran; Althumali, Ahmad; Gu, Erdan; Watson, Ian M; Dawson, Martin D

2016-01-01

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm −2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC. (paper)

Defect microstructure in copper alloys irradiated with 750 MeV protons

DEFF Research Database (Denmark)

Zinkle, S.J.; Horsewell, A.; Singh, B.N.

1994-01-01

Transmission electron microscopy (TEM) disks of pure copper and solid solution copper alloys containing 5 at% of Al, Mn, or Ni were irradiated with 750 MeV protons to damage levels between 0.4 and 2 displacements per atom (dpa) at irradiation temperatures between 60 and 200 degrees C. The defect...... significant effect on the total density of small defect clusters, but they did cause a significant decrease in the fraction of defect clusters resolvable as SFT to similar to 20 to 25%. In addition, the dislocation loop density (> 5 nm diameter) was more than an order of magnitude higher in the alloys...

New aspects of high energy density plasma

International Nuclear Information System (INIS)

Hotta, Eiki

2005-10-01

The papers presented at the symposium on 'New aspects of high energy density plasma' held at National Institute for Fusion Science are collected in this proceedings. The papers reflect the present status and recent progress in the experiments and theoretical works on high energy density plasma produced by pulsed power technology. The 13 of the presented papers are indexed individually. (J.P.N.)

Bremsstrahlung-induced highly penetrating probes for nondestructive assay and defect analysis

CERN Document Server

Selim, F A; Harmon, J F; Kwofie, J; Spaulding, R; Erickson, G; Roney, T

2002-01-01

Nondestructive assay and defect analysis probes based on bremsstrahlung-induced processes have been developed to identify elements and probe defects in large volume samples. Bremsstrahlung beams from (electron accelerators) with end-point energies both above and below neutron emission threshold have been used. Below neutron emission threshold these beams (from 6 MeV small pulsed linacs), which exhibit high penetration, create positrons via pair production inside the material and produce X-ray fluorescence (XRF) radiation. Chemical assays of heavy elements in thick samples up to 10 g/cm sup 2 thick are provided by energy dispersive XRF measurements. The pair-produced positrons annihilate within the material, thereby emitting 511 keV gamma radiation. Doppler broadening spectroscopy of the 511 keV radiation can be performed to characterize the material and measure defects in samples of any desired thickness. This technique has successfully measured induced strain due to tensile stress in steel samples of 0.64 cm...

Simulation of electron energy loss spectra of nanomaterials with linear-scaling density functional theory

International Nuclear Information System (INIS)

Tait, E W; Payne, M C; Ratcliff, L E; Haynes, P D; Hine, N D M

2016-01-01

Experimental techniques for electron energy loss spectroscopy (EELS) combine high energy resolution with high spatial resolution. They are therefore powerful tools for investigating the local electronic structure of complex systems such as nanostructures, interfaces and even individual defects. Interpretation of experimental electron energy loss spectra is often challenging and can require theoretical modelling of candidate structures, which themselves may be large and complex, beyond the capabilities of traditional cubic-scaling density functional theory. In this work, we present functionality to compute electron energy loss spectra within the onetep linear-scaling density functional theory code. We first demonstrate that simulated spectra agree with those computed using conventional plane wave pseudopotential methods to a high degree of precision. The ability of onetep to tackle large problems is then exploited to investigate convergence of spectra with respect to supercell size. Finally, we apply the novel functionality to a study of the electron energy loss spectra of defects on the (1 0 1) surface of an anatase slab and determine concentrations of defects which might be experimentally detectable. (paper)

High current density ion source

International Nuclear Information System (INIS)

King, H.J.

1977-01-01

A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Predicting of bead undercut defects in high-speed gas metal arc welding (GMAW)

Institute of Scientific and Technical Information of China (English)

Wen-jing XU; Chuan-song WU; De-gang ZOU

2008-01-01

In the gas metal arc welding (GMAW) process, when the welding speed reaches a certain threshold, there will be an onset of weld bead undercut defects which limit the further increase of the welding speed. Establishing a mathematical model for high-speed GMAW to predict the tendency of bead undercuts is of great significance to pre-vent such defects. Under the action of various forces, the transferred metal from filler wire to the weld pool, and the geometry and dimension of the pool itself decide if the bead undercut occurs or not. The previous model simpli-fied the pool shape too much. In this paper, based on the actual weld pool geometry and dimension calculated from a numerical model, a hydrostatic model for liquid metal surface is used to study the onset of bead undercut defects in the high-speed welding process and the effects of dif-ferent welding parameters on the bead undercut tendency.

Optimizing the hydrogen storage in boron nitride nanotubes by defect engineering

Energy Technology Data Exchange (ETDEWEB)

Oezdogan, Kemal; Berber, Savas [Physics Department, Gebze Institute of Technology, Cayirova Kampusu, Gebze, 41400 Kocaeli (Turkey)

2009-06-15

We use ab initio density functional theory calculations to study the interaction of hydrogen with vacancies in boron nitride nanotubes to optimize the hydrogen storage capacity through defect engineering. The vacancies reconstruct by forming B-B and N-N bonds across the defect site, which are not as favorable as heteronuclear B-N bonds. Our total energy and structure optimization results indicate that the hydrogen cleaves these reconstructing bonds to form more stable atomic structures. The hydrogenated defects offer smaller charge densities that allow hydrogen molecule to pass through the nanotube wall for storing hydrogen inside the nanotubes. Our optimum reaction pathway search revealed that hydrogen molecules could indeed go through a hydrogenated defect site with relatively small energy barriers compared to the pristine nanotube wall. The calculated activation energies for different diameters suggest a preferential diameter range for optimum hydrogen storage in defective boron nitride nanotubes. (author)

Models for Experimental High Density Housing

Science.gov (United States)

Bradecki, Tomasz; Swoboda, Julia; Nowak, Katarzyna; Dziechciarz, Klaudia

2017-10-01

The article presents the effects of research on models of high density housing. The authors present urban projects for experimental high density housing estates. The design was based on research performed on 38 examples of similar housing in Poland that have been built after 2003. Some of the case studies show extreme density and that inspired the researchers to test individual virtual solutions that would answer the question: How far can we push the limits? The experimental housing projects show strengths and weaknesses of design driven only by such indexes as FAR (floor attenuation ratio - housing density) and DPH (dwellings per hectare). Although such projects are implemented, the authors believe that there are reasons for limits since high index values may be in contradiction to the optimum character of housing environment. Virtual models on virtual plots presented by the authors were oriented toward maximising the DPH index and DAI (dwellings area index) which is very often the main driver for developers. The authors also raise the question of sustainability of such solutions. The research was carried out in the URBAN model research group (Gliwice, Poland) that consists of academic researchers and architecture students. The models reflect architectural and urban regulations that are valid in Poland. Conclusions might be helpful for urban planners, urban designers, developers, architects and architecture students.

Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research on amorphous silicon defect density); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (Amorphous silicon no kekkan mitsudo no kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-01

So as to determine the energy distribution of defect level density in a-Si, which is indispensable for an optimum solar cell design, the hitherto unclear theoretical relationship between the field effect method and MOS (metal oxide semiconductor) capacity method is made clear, and a unified theory is newly established. A high-speed totally automatic evaluation system is developed, capable of high-accuracy determination of defect levels. For the realization of an a-Si MOS structure required for fulfilling the above purpose, a-Si is grown and then diborane and ammonia are subjected to a glow discharge decomposition process for the formation of a new insulation film. It is found that the material may be utilized for MOS structure construction for defect density evaluation. Studies are conducted on plasma emission spectroscopy and infrared absorption analysis for the elucidation of growth mechanism for the growth of high-quality a-Si. Key radicals in plasma that govern film growth are investigated. It is disclosed that excited hydrogen in plasma plays an important part in microcrystalline phase deposition. It is also disclosed that hydrogenation greatly improves on CVD (chemical vapor deposition) a-Si doping efficiency. (NEDO)

High density operation in pulsator

International Nuclear Information System (INIS)

Klueber, O.; Cannici, B.; Engelhardt, W.; Gernhardt, J.; Glock, E.; Karger, F.; Lisitano, G.; Mayer, H.M.; Meisel, D.; Morandi, P.

1976-03-01

This report summarizes the results of experiments at high electron densities (>10 14 cm -3 ) which have been achieved by pulsed gas inflow during the discharge. At these densities a regime is established which is characterized by βsub(p) > 1, nsub(i) approximately nsub(e), Tsub(i) approximately Tsub(e) and tausub(E) proportional to nsub(e). Thus the toroidal magnetic field contributes considerably to the plasma confinement and the ions constitute almost half of the plasma pressure. Furthermore, the confinement is appreciably improved and the plasma becomes impermeable to hot neutrals. (orig.) [de

Tailored lithium storage performance of graphene aerogel anodes with controlled surface defects for lithium-ion batteries

International Nuclear Information System (INIS)

Shan, Hui; Xiong, Dongbin; Li, Xifei; Sun, Yipeng; Yan, Bo; Li, Dejun; Lawes, Stephen; Cui, Yanhua; Sun, Xueliang

2016-01-01

Graphical abstract: - Highlights: • The graphene aerogel (GA) with controllable surface defects was synthesized. • The graphene aerogel anodes showed high specific capacity and excellent cyclability. • Surface defects on the GA significantly function for lithium storage. • This study can extend the application of the graphene anodes for LIBs. - Abstract: Three dimensional self-assembled graphene aerogel (GA) anode materials with some surface defects have been successfully generated through a facile hydrothermal procedure using graphene oxide as precursor. The morphologies and textural properties of as-obtained GA were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman and other spectroscopy techniques. The surface defects and electrical conductivities of GA can be controlled by adjusting the hydrothermal reaction time. The results indicate that GA with a reaction time of 6 h exhibits extremely high reversible capacity (1430 mAh g"−"1 at the current density of 100 mA g"−"1) and superior rate capability (587 mAh g"−"1 at 800 mA g"−"1) with excellent cycling stability (maintaining a reversible capacity of 960 mAh g"−"1 at 100 mA g"−"1 after 100 cycles). It is demonstrated that the 3D porous network with increased defect density, as well as the considerable electrical conductivity, results in the excellent electrochemical performance of the as-made GA anodes in lithium-ion batteries.

Flexible asymmetric supercapacitors with high energy and high power density in aqueous electrolytes

Science.gov (United States)

Cheng, Yingwen; Zhang, Hongbo; Lu, Songtao; Varanasi, Chakrapani V.; Liu, Jie

2013-01-01

Supercapacitors with both high energy and high power densities are critical for many practical applications. In this paper, we discuss the design and demonstrate the fabrication of flexible asymmetric supercapacitors based on nanocomposite electrodes of MnO2, activated carbon, carbon nanotubes and graphene. The combined unique properties of each of these components enable highly flexible and mechanically strong films that can serve as electrodes directly without using any current collectors or binders. Using these flexible electrodes and a roll-up approach, asymmetric supercapacitors with 2 V working voltage were successfully fabricated. The fabricated device showed excellent rate capability, with 78% of the original capacitance retained when the scan rate was increased from 2 mV s-1 to 500 mV s-1. Owing to the unique composite structure, these supercapacitors were able to deliver high energy density (24 W h kg-1) under high power density (7.8 kW kg-1) conditions. These features could enable supercapacitor based energy storage systems to be very attractive for a variety of critical applications, such as the power sources in hybrid electric vehicles and the back-up powers for wind and solar energy, where both high energy density and high power density are required.Supercapacitors with both high energy and high power densities are critical for many practical applications. In this paper, we discuss the design and demonstrate the fabrication of flexible asymmetric supercapacitors based on nanocomposite electrodes of MnO2, activated carbon, carbon nanotubes and graphene. The combined unique properties of each of these components enable highly flexible and mechanically strong films that can serve as electrodes directly without using any current collectors or binders. Using these flexible electrodes and a roll-up approach, asymmetric supercapacitors with 2 V working voltage were successfully fabricated. The fabricated device showed excellent rate capability, with 78% of

Some recent efforts toward high density implosions

International Nuclear Information System (INIS)

McClellan, G.E.

1980-01-01

Some recent Livermore efforts towards achieving high-density implosions are presented. The implosion dynamics necessary to compress DT fuel to 10 to 100 times liquid density are discussed. Methods of diagnosing the maximum DT density for a specific design are presented along with results to date. The dynamics of the double-shelled target with an exploding outer shell are described, and some preliminary experimental results are presented

Improved GAMMA 10 tandem mirror confinement in high density plasma

International Nuclear Information System (INIS)

Yatsu, K.; Cho, T.; Higaki, H.; Hirata, M.; Hojo, H.; Ichimura, M.; Ishii, K.; Ishimoto, Y.; Itakura, A.; Katanuma, I.; Kohagura, J.; Minami, R.; Nakashima, Y.; Numakura, T.; Saito, T.; Saosaki, S.; Takemura, Y.; Tatematsu, Y.; Yoshida, M.; Yoshikawa, M.

2003-01-01

GAMMA 10 experiments have advanced in high density experiments after the last IAEA fusion energy conference in 2000 where we reported the production of the high density plasma through use of ion cyclotron range of frequency heating at a high harmonic frequency and neutral beam injection in the anchor cells. However, the diamagnetic signal of the plasma decreased when electron cyclotron resonance heating was applied for the potential formation. Recently a high density plasma has been obtained without degradation of the diamagnetic signal and with much improved reproducibility than before. The high density plasma was attained through adjustment of the spacing of the conducting plates installed in the anchor transition regions. The potential confinement of the plasma has been extensively studied. Dependences of the ion confinement time, ion-energy confinement time and plasma confining potential on plasma density were obtained for the first time in the high density region up to a density of 4x10 18 m -3 . (author)

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

Science.gov (United States)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

Insight into point defects and impurities in titanium from first principles

Science.gov (United States)

Nayak, Sanjeev K.; Hung, Cain J.; Sharma, Vinit; Alpay, S. Pamir; Dongare, Avinash M.; Brindley, William J.; Hebert, Rainer J.

2018-03-01

Titanium alloys find extensive use in the aerospace and biomedical industries due to a unique combination of strength, density, and corrosion resistance. Decades of mostly experimental research has led to a large body of knowledge of the processing-microstructure-properties linkages. But much of the existing understanding of point defects that play a significant role in the mechanical properties of titanium is based on semi-empirical rules. In this work, we present the results of a detailed self-consistent first-principles study that was developed to determine formation energies of intrinsic point defects including vacancies, self-interstitials, and extrinsic point defects, such as, interstitial and substitutional impurities/dopants. We find that most elements, regardless of size, prefer substitutional positions, but highly electronegative elements, such as C, N, O, F, S, and Cl, some of which are common impurities in Ti, occupy interstitial positions.

Position Dependent Spontaneous Emission Spectra of a Λ-Type Atomic System Embedded in a Defective Photonic Crystal

International Nuclear Information System (INIS)

Entezar, S. Roshan

2012-01-01

We investigate the position dependent spontaneous emission spectra of a Λ-type three-level atom with one transition coupled to the free vacuum reservoir and the other one coupled to a double-band photonic band gap reservoir with a defect mode in the band gap. It is shown that, for the atom at the defect location, we have a two-peak spectrum with a wide dark line due to the strong coupling between the atom and the defect mode. While, when the atom is far from the defect location (or in the absence of the defect mode), the spectrum has three peaks with two dark lines due to the coupling between the atom and the photonic band gap reservoir with the largest density of states near the band edges. On the other hand, we have a four-peak spectrum for the atom at the space in between. Moreover, the average spontaneous emission spectra of the atoms uniformly embedded in high dielectric or low dielectric regions are described. It is shown that the atoms embedded in high (low) dielectric regions far from the defect location, effectively couple to the modes of the lower (upper) photonic band. However, the atoms embedded in high dielectric or low dielectric regions at the defect location, are coupled mainly to the defect modes. While, the atoms uniformly embedded in high (low) dielectric regions with a normal distance from the defect location, are coupled to both of defect and lower (upper) photonic band modes. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Transient fatty cortical defects following fractures in children

International Nuclear Information System (INIS)

Malghem, J.; Maldague, B.

1986-01-01

Self-regressing subperiosteal defects appearing during consolidation of fractures were observed in two children aged 6 and 10 years, in the tibia and the radious respectively. These transient defects appeared several weeks after fracture, at a distance from the fracture site. They involved the newly formed subperiosteal bone, did not enlarge, and were replaced progressively by normal-appearing bone. A computed tomography (CT) study performed on one of these defects demonstrated a density consistent with a fatty content. It is suggested that these transient post-traumatic defect could result from the inclusion of medulary fat drops within the subperiosteal heamtoma near the fracture site. (orig.)

Intrinsic Defects and H Doping in WO3

KAUST Repository

Zhu, Jiajie

2017-01-18

WO3 is widely used as industrial catalyst. Intrinsic and/or extrinsic defects can tune the electronic properties and extend applications to gas sensors and optoelectonics. However, H doping is a challenge to WO3, the relevant mechanisms being hardly understood. In this context, we investigate intrinsic defects and H doping by density functional theory and experiments. Formation energies are calculated to determine the lowest energy defect states. O vacancies turn out to be stable in O-poor environment, in agreement with X-ray photoelectron spectroscopy, and O-H bond formation of H interstitial defects is predicted and confirmed by Fourier transform infrared spectroscopy.

High-voltage electron-microscope investigation of point-defect agglomerates in irradiated copper during in-situ annealing

International Nuclear Information System (INIS)

Jaeger, W.; Urban, K.; Frank, W.

1980-01-01

Thin copper foils were irradiated with 650 keV electrons at 10 K in a high-voltage electron microscope (HVEM) to doses phi in the range 2 x 10 23 electrons/m 2 approximately 25 electrons /m 2 and then annealed in situ up to room temperature and outside the HVEM between room temperature and 470 K. During irradiation visible defect clusters were formed only at phi >= 2.5 x 10 24 electrons/m 2 . At smaller doses defect clusters became visible after annealing at 50 K. Between 50 K and 120 K further clusters, mainly dislocation loops on brace111 planes, appeared. Above 120 K, particularly between 160 K and 300 K, some of the dislocation loops became glissile. They glided out of the specimens or agglomerated to larger clusters of frequently complex shapes. As a consequence between 160 K and 300 K the cluster density decreased strongly, whereas the mean cluster size increased monotonously through the entire range of annealing temperatures covered. Contrast analyses between 180 K and 400 K revealed that the great majority of the dislocation loops were of interstitial type. At 470 K a new type of small clusters emerged, presumably of vacancy type. These observations are compared with other studies on electron-irradiated copper and with the current models of radiation damage in metals. (author)

High-density limit of quantum chromodynamics

International Nuclear Information System (INIS)

Alvarez, E.

1983-01-01

By means of a formal expansion of the partition function presumably valid at large baryon densities, the propagator of the quarks is expressed in terms of the gluon propagator. This result is interpreted as implying that correlations between quarks and gluons are unimportant at high enough density, so that a kind of mean-field approximation gives a very accurate description of the physical system

Characterization of point defects in monolayer arsenene

Science.gov (United States)

Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

2018-06-01

Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

Fueling with edge recycling to high-density in DIII-D

Energy Technology Data Exchange (ETDEWEB)

Leonard, A.W., E-mail: leonard@fusion.gat.com [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States); Elder, J.D. [University of Toronto Institute of Aerospace Studies, Toronto, Canada M3H 5T6 (Canada); Canik, J.M. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Groebner, R.J.; Osborne, T.H. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States)

2013-07-15

Pedestal fueling through edge recycling is examined with the interpretive OEDGE code for high-density discharges in DIII-D. A high current, high-density discharge is found to have a similar radial ion flux profile through the pedestal to a lower current, lower density discharge. The higher density discharge, however, has a greater density gradient indicating a pedestal particle diffusion coefficient that scales near linear with 1/I{sub p}. The time dependence of density profile is taken into account in the analysis of a discharge with low frequency ELMs. The time-dependent analysis indicates that the inferred neutral ionization source is inadequate to account for the increase in the density profile between ELMs, implying an inward density convection, or density pinch, near the top of the pedestal.

Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

Science.gov (United States)

Singh, Abhishek; Pandey, Tribhuwan

2014-03-01

The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

Defect cascades produced by neutron irradiation in YBa2Cu3O7-δ superconductors

International Nuclear Information System (INIS)

Frischherz, M.C.; Kirk, M.A.; Farmer, J.

1994-02-01

The defect cascades produced by fast neutron irradiation of YBa 2 Cu 3 O 7-δ single crystals were studied by transmission electron microscopy. The visible defects were found to have sizes between 1 and 5 rim. Defect densities were obtained as a function of neutron fluence between 2 and 8x 10 21 m -2 (E>0.1 MeV). The measured defect density scales linearly with fluence and amounts to 1x10 22 m -3 at a neutron fluence of 2x10 2l m -2 . The defect stability was studied at room temperature and through annealing to 400 degrees C

Low density, variation in sintered density and high nitrogen in uranium dioxide

International Nuclear Information System (INIS)

Balakrishna, Palanki; Murty, B.N.; Anuradha, M.; Nageshwara Rao, P.; Jayaraj, R.N.; Ganguly, C.

2000-01-01

Low sintered density and density variation in sintered UO 2 were found to have been caused by non uniformity in the granule feed characteristics to the compacting press. The nitrogen impurity content of sintered UO 2 was found to be sintering furnace related and associated with low sintered density pellets. The problems of low density, variation in sintered density and high nitrogen could be solved by the replacement of the prevailing four punch precompaction by a single punch process; by the introduction of a vibro-sieve for the separation of fine particles from the press feed granules; by innovation in the powder feed shoe design for simultaneous and uniform dispensing of powder in all the die holes; by increasing the final compaction pressure and by modifying the gas flows and preheat temperature in the sintering furnace. (author)

Energetics of intrinsic point defects in uranium dioxide from electronic-structure calculations

International Nuclear Information System (INIS)

Nerikar, Pankaj; Watanabe, Taku; Tulenko, James S.; Phillpot, Simon R.; Sinnott, Susan B.

2009-01-01

The stability range of intrinsic point defects in uranium dioxide is determined as a function of temperature, oxygen partial pressure, and non-stoichiometry. The computational approach integrates high accuracy ab initio electronic-structure calculations and thermodynamic analysis supported by experimental data. In particular, the density functional theory calculations are performed at the level of the spin polarized, generalized gradient approximation and includes the Hubbard U term; as a result they predict the correct anti-ferromagnetic insulating ground state of uranium oxide. The thermodynamic calculations enable the effects of system temperature and partial pressure of oxygen on defect formation energy to be determined. The predicted equilibrium properties and defect formation energies for neutral defect complexes match trends in the experimental literature quite well. In contrast, the predicted values for charged complexes are lower than the measured values. The calculations predict that the formation of oxygen interstitials becomes increasingly difficult as higher temperatures and reducing conditions are approached

High throughput nonparametric probability density estimation.

Science.gov (United States)

Farmer, Jenny; Jacobs, Donald

2018-01-01

In high throughput applications, such as those found in bioinformatics and finance, it is important to determine accurate probability distribution functions despite only minimal information about data characteristics, and without using human subjectivity. Such an automated process for univariate data is implemented to achieve this goal by merging the maximum entropy method with single order statistics and maximum likelihood. The only required properties of the random variables are that they are continuous and that they are, or can be approximated as, independent and identically distributed. A quasi-log-likelihood function based on single order statistics for sampled uniform random data is used to empirically construct a sample size invariant universal scoring function. Then a probability density estimate is determined by iteratively improving trial cumulative distribution functions, where better estimates are quantified by the scoring function that identifies atypical fluctuations. This criterion resists under and over fitting data as an alternative to employing the Bayesian or Akaike information criterion. Multiple estimates for the probability density reflect uncertainties due to statistical fluctuations in random samples. Scaled quantile residual plots are also introduced as an effective diagnostic to visualize the quality of the estimated probability densities. Benchmark tests show that estimates for the probability density function (PDF) converge to the true PDF as sample size increases on particularly difficult test probability densities that include cases with discontinuities, multi-resolution scales, heavy tails, and singularities. These results indicate the method has general applicability for high throughput statistical inference.

Disorder and defects are not intrinsic to boron carbide

Science.gov (United States)

Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

2016-01-01

A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

Highly efficient red electrophosphorescent devices at high current densities

International Nuclear Information System (INIS)

Wu Youzhi; Zhu Wenqing; Zheng Xinyou; Sun, Runguang; Jiang Xueyin; Zhang Zhilin; Xu Shaohong

2007-01-01

Efficiency decrease at high current densities in red electrophosphorescent devices is drastically restrained compared with that from conventional electrophosphorescent devices by using bis(2-methyl-8-quinolinato)4-phenylphenolate aluminum (BAlq) as a hole and exciton blocker. Ir complex, bis(2-(2'-benzo[4,5-α]thienyl) pyridinato-N,C 3' ) iridium (acetyl-acetonate) is used as an emitter, maximum external quantum efficiency (QE) of 7.0% and luminance of 10000cd/m 2 are obtained. The QE is still as high as 4.1% at higher current density J=100mA/cm 2 . CIE-1931 co-ordinates are 0.672, 0.321. A carrier trapping mechanism is revealed to dominate in the process of electroluminescence

A computational framework for automation of point defect calculations

International Nuclear Information System (INIS)

Goyal, Anuj; Gorai, Prashun; Peng, Haowei

2017-01-01

We have developed a complete and rigorously validated open-source Python framework to automate point defect calculations using density functional theory. Furthermore, the framework provides an effective and efficient method for defect structure generation, and creation of simple yet customizable workflows to analyze defect calculations. This package provides the capability to compute widely-accepted correction schemes to overcome finite-size effects, including (1) potential alignment, (2) image-charge correction, and (3) band filling correction to shallow defects. Using Si, ZnO and In2O3 as test examples, we demonstrate the package capabilities and validate the methodology.

Fundamental properties of high-quality carbon nanofoam: from low to high density

Directory of Open Access Journals (Sweden)

Natalie Frese

2016-12-01

Full Text Available Highly uniform samples of carbon nanofoam from hydrothermal sucrose carbonization were studied by helium ion microscopy (HIM, X-ray photoelectron spectroscopy (XPS, and Raman spectroscopy. Foams with different densities were produced by changing the process temperature in the autoclave reactor. This work illustrates how the geometrical structure, electron core levels, and the vibrational signatures change when the density of the foams is varied. We find that the low-density foams have very uniform structure consisting of micropearls with ≈2–3 μm average diameter. Higher density foams contain larger-sized micropearls (≈6–9 μm diameter which often coalesced to form nonspherical μm-sized units. Both, low- and high-density foams are comprised of predominantly sp2-type carbon. The higher density foams, however, show an advanced graphitization degree and a stronger sp3-type electronic contribution, related to the inclusion of sp3 connections in their surface network.

Sputtered thin films for high density tape recording

NARCIS (Netherlands)

Nguyen, L.T.

This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

High-density housing that works for all

Energy Technology Data Exchange (ETDEWEB)

Hasan, Arif

2010-03-15

In an urbanising world, the way people fit into cities is vastly important - socially, economically, environmentally, even psychologically. So density, or the number of people living in a given area, is central to urban design and planning. Both governments and markets tend to get density wrong, leading to overcrowding, urban sprawl or often both. A case in point are the high-rise buildings springing up throughtout urban Asia - perceived as key features of that widely touted concept, the 'world-class city'. While some may offer a viable solution to land pressures and density requirements, many built to house evicted or resettled 'slum' dwellers are a social and economic nightmare - inconveniently sited, overcrowded and costly. New evidence from Karachi, Pakistan, reveals a real alternative. Poor people can create liveable high-density settlements as long as community control, the right technical assistance and flexible designs are in place. A city is surely 'world-class' only when it is cosmopolitan – built to serve all, including the poorest.

High density high performance plasma with internal diffusion barrier in Large Helical Device

International Nuclear Information System (INIS)

Sakamoto, R.; Kobayashi, M.; Miyazawa, J.

2008-10-01

A attractive high density plasma operational regime, namely an internal diffusion barrier (IDB), has been discovered in the intrinsic helical divertor configuration on the Large Helical Device (LHD). The IDB which enables core plasma to access a high density/high pressure regime has been developed. It is revealed that the IDB is reproducibly formed by pellet fueling in the magnetic configurations shifted outward in major radius. Attainable central plasma density exceeds 1x10 21 m -3 . Central pressure reaches 1.5 times atmospheric pressure and the central β value becomes fairly high even at high magnetic field, i.e. β(0)=5.5% at B t =2.57 T. (author)

High density data recording for SSCL linac

International Nuclear Information System (INIS)

VanDeusen, A.L.; Crist, C.

1993-01-01

The Superconducting Super Collider Laboratory and AlliedSignal Aerospace have collaboratively developed a high density data monitoring system for beam diagnostic activities. The 128 channel data system is based on a custom multi-channel high speed digitizer card for the VXI bus. The card is referred to as a Modular Input VXI (MIX) digitizer. Multiple MIX cards are used in the complete system to achieve the necessary high channel density requirements. Each MIX digitizer card also contains programmable signal conditioning, and enough local memory to complete an entire beam scan without assistance from the host processor

Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

2013-01-01

The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

International Nuclear Information System (INIS)

Altamore, C; Tringali, C; Sparta', N; Marco, S Di; Grasso, A; Ravesi, S

2010-01-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10 5 ) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10 1 Hz to 10 6 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl 2 /Ar chemistry. The relationship between the etch rate and the Cl 2 /Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl 2 /Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

Energy Technology Data Exchange (ETDEWEB)

Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

2010-02-15

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Compensated readout for high-density MOS-gated memristor crossbar array

KAUST Repository

Zidan, Mohammed A.

2015-01-01

Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

Science.gov (United States)

Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

2018-02-01

The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

Point defect balance in epitaxial GaSb

International Nuclear Information System (INIS)

Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

2014-01-01

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Statistical relation between particle contaminations in ultra pure water and defects generated by process tools

NARCIS (Netherlands)

Wali, F.; Knotter, D. Martin; Wortelboer, Ronald; Mud, Auke

2007-01-01

Ultra pure water supplied inside the Fab is used in different tools at different stages of processing. Data of the particles measured in ultra pure water was compared with the defect density on wafers processed on these tools and a statistical relation is found Keywords— Yield, defect density,

Numerical analysis of energy density and particle density in high energy heavy-ion collisions

International Nuclear Information System (INIS)

Fu Yuanyong; Lu Zhongdao

2004-01-01

Energy density and particle density in high energy heavy-ion collisions are calculated with infinite series expansion method and Gauss-Laguerre formulas in numerical integration separately, and the results of these two methods are compared, the higher terms and linear terms in series expansion are also compared. The results show that Gauss-Laguerre formulas is a good method in calculations of high energy heavy-ion collisions. (author)

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

Science.gov (United States)

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

The behavior of lattice defects produced in Al2O3 irradiated by neutrons at high temperatures

International Nuclear Information System (INIS)

Atobe, K.; Koizumi, T.; Okada, M.

2003-01-01

Single crystals of α-Al 2 O 3 were irradiated by the two reactors, KUR and JMTR, at three different temperatures. Lattice defects produced by irradiation were studied by esr (electron spin resonance). Three kinds of esr spectram, which are denoted as A, B and C spectram, are observed. The spectram A was observed at three different irradiation temperatures and was ascribed to oxygen vacancies. The spectram B showed no angular dependence for the rotation of external magnetic field to the crystal axis, and the defect density of this spectram decreased with an increase of annealing temperature. When the specimen was annealed at 400 degC after irradiation at 200 degC, the spectram C was observed and was presumed to be due to Al-colloids. (Y. Kazumata)

The relationship between collisional phase defect distribution and cascade collapse efficiency

International Nuclear Information System (INIS)

Morishita, K.; Heinisch, H.L.; Ishino, S.; Sekimura, N.

1994-01-01

Defect distributions after the collisional phase of cascade damage processes were calculated using the computer simulation code MARLOWE, which is based on the binary collision approximation. The densities of vacant sites were evaluated in defect-dense regions at the end of the collisional phase in simulated ion irradiations of several pure metals (Au, Ag, Cu, Ni, Fe, Mo and W). The vacancy density distributions were compared to the measured cascade collapse efficiencies obtained from low-dose ion irradiations of thin foils reported in the literature to identify the minimum or ''critical'' values of the vacancy densities during the collisional phase corresponding to cascade collapse. The critical densities are generally independent of the cascade energy in the same metal. The relationships between physical properties of the target elements and the critical densities are discussed within the framework of the cascade thermal spike model. ((orig.))

High density regimes and beta limits in JET

International Nuclear Information System (INIS)

Smeulders, P.

1990-01-01

Results are first presented on the density limit in JET discharges with graphite (C), Be gettered graphite and Be limiters. There is a clear improvement in the case of Be limiters. The Be gettered phase showed no increase in the gas fueled density limit, except with Ion Cyclotron Resonance Heating (ICRH), but, the limit changed character. During MARFE-formation, any further increase in density was prevented, leading to a soft density limit. The soft density limit was a function of input power and impurity content with a week dependence on q. Helium and pellet fuelled discharges exceeded the gas-fuelled global density limits, but essentially had the same edge limit. In the second part, results are presented of high β operation in low-B Double-Null (DN) X-point configurations with Be-gettered carbon target plates. The Troyon limit was reached during H-mode discharges and toroidal β values of 5.5% were obtained. At high beta, the sawteeth were modified and characterised by very rapid heat-waves and fishbone-like pre- and post-cursors with strongly ballooning character. 17 refs., 5 figs

The use of low density high accuracy (LDHA) data for correction of high density low accuracy (HDLA) point cloud

Science.gov (United States)

Rak, Michal Bartosz; Wozniak, Adam; Mayer, J. R. R.

2016-06-01

Coordinate measuring techniques rely on computer processing of coordinate values of points gathered from physical surfaces using contact or non-contact methods. Contact measurements are characterized by low density and high accuracy. On the other hand optical methods gather high density data of the whole object in a short time but with accuracy at least one order of magnitude lower than for contact measurements. Thus the drawback of contact methods is low density of data, while for non-contact methods it is low accuracy. In this paper a method for fusion of data from two measurements of fundamentally different nature: high density low accuracy (HDLA) and low density high accuracy (LDHA) is presented to overcome the limitations of both measuring methods. In the proposed method the concept of virtual markers is used to find a representation of pairs of corresponding characteristic points in both sets of data. In each pair the coordinates of the point from contact measurements is treated as a reference for the corresponding point from non-contact measurement. Transformation enabling displacement of characteristic points from optical measurement to their match from contact measurements is determined and applied to the whole point cloud. The efficiency of the proposed algorithm was evaluated by comparison with data from a coordinate measuring machine (CMM). Three surfaces were used for this evaluation: plane, turbine blade and engine cover. For the planar surface the achieved improvement was of around 200 μm. Similar results were obtained for the turbine blade but for the engine cover the improvement was smaller. For both freeform surfaces the improvement was higher for raw data than for data after creation of mesh of triangles.

HIGH DENSITY QCD WITH HEAVY-IONS

CERN Multimedia

The Addendum 1 to Volume 2 of the CMS Physics TDR has been published The Heavy-Ion analysis group completed the writing of a TDR summarizing the CMS plans in using heavy ion collisions to study high density QCD. The document was submitted to the LHCC in March and presented in the Open Session of the LHCC on May 9th. The study of heavy-ion physics at the LHC is promising to be very exciting. LHC will open a new energy frontier in ultra-relativistic heavy-ion physics. The collision energy of heavy nuclei at sNN = 5.5 TeV will be thirty times larger than what is presently available at RHIC. We will certainly probe quark and gluon matter at unprecedented values of energy density. The prime goal of this research programme is to study the fundamental theory of the strong interaction - Quantum Chromodynamics (QCD) - in extreme conditions of temperature, density and parton momentum fraction (low-x). Such studies, with impressive experimental and theoretical advances in recent years thanks to the wealth of high-qua...

Self-annihilation of inversion domains by high energy defects in III-Nitrides

International Nuclear Information System (INIS)

Koukoula, T.; Kioseoglou, J.; Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

2014-01-01

Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001 ¯ ) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN

An x-ray backlit Talbot-Lau deflectometer for high-energy-density electron density diagnostics

Science.gov (United States)

Valdivia, M. P.; Stutman, D.; Stoeckl, C.; Theobald, W.; Mileham, C.; Begishev, I. A.; Bromage, J.; Regan, S. P.

2016-02-01

X-ray phase-contrast techniques can measure electron density gradients in high-energy-density plasmas through refraction induced phase shifts. An 8 keV Talbot-Lau interferometer consisting of free standing ultrathin gratings was deployed at an ultra-short, high-intensity laser system using K-shell emission from a 1-30 J, 8 ps laser pulse focused on thin Cu foil targets. Grating survival was demonstrated for 30 J, 8 ps laser pulses. The first x-ray deflectometry images obtained under laser backlighting showed up to 25% image contrast and thus enabled detection of electron areal density gradients with a maximum value of 8.1 ± 0.5 × 1023 cm-3 in a low-Z millimeter sized sample. An electron density profile was obtained from refraction measurements with an error of x-ray source-size, similar to conventional radiography.

Defects and diffusion in semiconductors XIV

CERN Document Server

Fisher, David J

2012-01-01

This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and

Initial stability of a highly porous titanium cup in an acetabular bone defect model.

Science.gov (United States)

Yoshimoto, Kensei; Nakashima, Yasuharu; Wakiyama, Miyo; Hara, Daisuke; Nakamura, Akihiro; Iwamoto, Mikio

2018-04-12

The purpose of this study was to quantify the initial stability of a highly porous titanium cup using an acetabular bone defect model. The maximum torque of a highly porous titanium cup, with a pore size of 640 μm and porosity of 60%, was measured using rotational and lever-out torque testing and compared to that of a titanium-sprayed cup. The bone models were prepared using a polyurethane foam block and had three levels of bone coverage: 100, 70, and 50%. The highly porous titanium cup demonstrated significantly higher maximum torque than the titanium-sprayed cups in the three levels of bone defects. On rotational torque testing, it was found to be 1.5, 1.3, and 1.3 times stronger than the titanium-sprayed cups with 100, 70 and 50% bone coverage, respectively. Furthermore, it was found to be 2.2, 2.3, and 1.5 times stronger on lever-out testing than the titanium-sprayed cup. No breakage in the porous layers was noted during the testing. This study provides additional evidence of the initial stability of highly porous titanium cup, even in the presence of acetabular bone defects. Copyright © 2018. Published by Elsevier B.V.

Assessment of local variability by high-throughput e-beam metrology for prediction of patterning defect probabilities

Science.gov (United States)

Wang, Fuming; Hunsche, Stefan; Anunciado, Roy; Corradi, Antonio; Tien, Hung Yu; Tang, Peng; Wei, Junwei; Wang, Yongjun; Fang, Wei; Wong, Patrick; van Oosten, Anton; van Ingen Schenau, Koen; Slachter, Bram

2018-03-01

We present an experimental study of pattern variability and defectivity, based on a large data set with more than 112 million SEM measurements from an HMI high-throughput e-beam tool. The test case is a 10nm node SRAM via array patterned with a DUV immersion LELE process, where we see a variation in mean size and litho sensitivities between different unique via patterns that leads to a seemingly qualitative differences in defectivity. The large available data volume enables further analysis to reliably distinguish global and local CDU variations, including a breakdown into local systematics and stochastics. A closer inspection of the tail end of the distributions and estimation of defect probabilities concludes that there is a common defect mechanism and defect threshold despite the observed differences of specific pattern characteristics. We expect that the analysis methodology can be applied for defect probability modeling as well as general process qualification in the future.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

Science.gov (United States)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Defects of diamond single crystal grown under high temperature and high pressure

Energy Technology Data Exchange (ETDEWEB)

Su, Qingcai, E-mail: suqc@sdu.edu.cn [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China); Zhang, Jianhua [School of Mechanical Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Li, Musen [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China)

2013-11-01

The diamond single crystal, synthesized with Fe–Ni–C–B system of catalyst under high temperature and high pressure, had been observed by field emission scanning electron microscope and transmission electron microscope. The presence of a cellular structure suggested that the diamond grew from melted catalyst solution and there existed a zone of component supercooling zone in front of the solid–liquid interface. The main impurities in the diamond crystal was (FeNi){sub 23}C{sub 6}. The triangle screw pit revealed on the (111) plane was generated by the screw dislocation meeting the diamond (111) plane at the points of emergence of dislocations. A narrow twin plane was formed between the two (111) plane. - Highlights: • High pressure, high temperature synthesis of diamond single crystal. • Fe–Ni–C–B used as catalyst, graphite as carbon source. • The main impurity in the diamond crystal was (FeNi){sub 23}C{sub 6}. • Surface defects arose from screw dislocations and stacking faults.

A graphical automated detection system to locate hardwood log surface defects using high-resolution three-dimensional laser scan data

Science.gov (United States)

Liya Thomas; R. Edward. Thomas

2011-01-01

We have developed an automated defect detection system and a state-of-the-art Graphic User Interface (GUI) for hardwood logs. The algorithm identifies defects at least 0.5 inch high and at least 3 inches in diameter on barked hardwood log and stem surfaces. To summarize defect features and to build a knowledge base, hundreds of defects were measured, photographed, and...

Chapter 7: High-Density H-Mode Operation in ASDEX Upgrade

International Nuclear Information System (INIS)

Stober, Joerg Karl; Lang, Peter Thomas; Mertens, Vitus

2003-01-01

Recent results are reported on the maximum achievable H-mode density and the behavior of pedestal density and central density peaking as this limit is approached. The maximum achievable H-mode density roughly scales as the Greenwald density, though a dependence on B t is clearly observed. In contrast to the stiff temperature profiles, the density profiles seem to allow more shape variation and especially with high-field-side pellet-injection, strongly peaked profiles with good confinement have been achieved. Also, spontaneous density peaking at high densities is observed in ASDEX Upgrade, which is related to the generally observed large time constants for the density profile equilibration. The equilibrated density profile shapes depend strongly on the heat-flux profile in the sense that central heating leads to significantly flatter profiles

Experimental study of high density foods for the Space Operations Center

Science.gov (United States)

Ahmed, S. M.

1981-01-01

The experimental study of high density foods for the Space Operations Center is described. A sensory evaluation of the high density foods was conducted first to test the acceptability of the products. A shelf-life study of the high density foods was also conducted for three different time lengths at three different temperatures. The nutritional analysis of the high density foods is at present incomplete.

Fluorescent Fe K Emission from High Density Accretion Disks

Science.gov (United States)

Bautista, Manuel; Mendoza, Claudio; Garcia, Javier; Kallman, Timothy R.; Palmeri, Patrick; Deprince, Jerome; Quinet, Pascal

2018-06-01

Iron K-shell lines emitted by gas closely orbiting black holes are observed to be grossly broadened and skewed by Doppler effects and gravitational redshift. Accordingly, models for line profiles are widely used to measure the spin (i.e., the angular momentum) of astrophysical black holes. The accuracy of these spin estimates is called into question because fitting the data requires very high iron abundances, several times the solar value. Meanwhile, no plausible physical explanation has been proffered for why these black hole systems should be so iron rich. The most likely explanation for the super-solar iron abundances is a deficiency in the models, and the leading candidate cause is that current models are inapplicable at densities above 1018 cm-3. We study the effects of high densities on the atomic parameters and on the spectral models for iron ions. At high densities, Debye plasma can affect the effective atomic potential of the ions, leading to observable changes in energy levels and atomic rates with respect to the low density case. High densities also have the effec of lowering energy the atomic continuum and reducing the recombination rate coefficients. On the spectral modeling side, high densities drive level populations toward a Boltzman distribution and very large numbers of excited atomic levels, typically accounted for in theoretical spectral models, may contribute to the K-shell spectrum.

Phenomenology of high density disruptions in the TFTR tokamak

International Nuclear Information System (INIS)

Fredrickson, E.D.; McGuire, K.M.; Bell, M.G.

1993-01-01

Studies of high density disruptions on TFTR, including a comparison of minor and major disruptions at high density, provide important new information regarding the nature of the disruption mechanism. Further, for the first time, an (m,n)=(1,1) 'cold bubble' precursor to high density disruptions has been experimentally observed in the electron temperature profile. The precursor to major disruptions resembles the 'vacuum bubble' model of disruptions first proposed by B.B. Kadomtsev and O.P. Pogutse (Sov. Phys. - JETP 38 (1974) 283). (author). Letter-to-the-editor. 25 refs, 3 figs

High Energy Density Polymer Film Capacitors

National Research Council Canada - National Science Library

Boufelfel, Ali

2006-01-01

High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

Point defects in ZnO crystals grown by various techniques

International Nuclear Information System (INIS)

Čížek, J; Vlček, M; Hruška, P; Lukáč, F; Melikhova, O; Anwand, W; Selim, F; Hugenschmidt, Ch; Egger, W

2017-01-01

In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of ≈181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of ≈165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport. (paper)

Effects of structure and defect on fatigue limit in high strength ductile irons

International Nuclear Information System (INIS)

Kim, Jin Hak; Kim, Min Gun

2000-01-01

In this paper, the influence of several factors such as hardness, internal defect and non-propagating crack on fatigue limits was investigated with three kinds of ductile iron specimens. From the experimental results the fatigue limits were examined in relation with hardness and tensile strength in case of high strength specimens under austempering treatment; in consequence the marked improvement of fatigue limits were not showed. The maximum defect size was an important factor to predict and to evaluate the fatigue limits of ductile irons. And, the quantitative relationship between the fatigue limits(σ ω ) and the maximum defect size(√area max ) was expressed as σ ω n · √area max =C 2 . Also, it was possible to explain the difference for the fatigue limits in three ductile irons by introduction of the non-propagating crack rates

Defect-rich Ni-Ti layered double hydroxide as a highly efficient support for Au nanoparticles in base-free and solvent-free selective oxidation of benzyl alcohol.

Science.gov (United States)

Liu, Mengran; Fan, Guoli; Yu, Jiaying; Yang, Lan; Li, Feng

2018-04-17

Tuning the surface properties of supported metal catalysts is of vital importance for governing their catalytic performances in nanocatalysis. Here, we report highly dispersed nanometric gold nanoparticles (NPs) supported on Ni-Ti layered double hydroxides (NiTi-LDHs), which were employed in solvent-free and base-free selective oxidation of benzyl alcohol. A series of characterization techniques demonstrated that defect-rich NiTi-LDHs could efficiently stabilize Au NPs and decrease surface electron density of Au NPs. The as-formed Au/NiTi-LDH catalyst with a Ni/Ti molar ratio of 3 : 1 and an Au loading of 0.71 wt% yielded the highest turnover frequency value of ∼4981 h-1 at 120 °C among tested Au/NiTi-LDH catalysts with different Ni/Ti molar ratios, along with a high benzaldehyde selectivity of 98%. High catalytic efficiency of the catalyst was mainly correlated with surface cooperation between unique defects (i.e. defective Ti3+ species and oxygen vacancies) and abundant hydroxyl groups on the brucite-like layers of the NiTi-LDH support, which could lead to the preferential adsorption and activation of an alcohol hydroxyl moiety in benzyl alcohol and oxygen molecule, as well as the formation of more electron-deficient Ni3+ and Au0 species on the catalyst surface. Furthermore, the present Au/NiTi-LDH catalyst tolerated the oxidation of a wide variety of substrate structures into the corresponding aldehydes, acids or ketones. Our primary results illustrate that defect-rich NiTi-LDHs are promising supports which can efficiently modify surface structure and electronic properties of supported metal catalysts and consequently improve their catalytic performances.

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Optoelectronics and defect levels in hydroxyapatite by first-principles

Science.gov (United States)

Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

2018-04-01

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Molecular dynamics simulations of high energy cascade in ordered alloys: Defect production and subcascade division

Energy Technology Data Exchange (ETDEWEB)

Crocombette, Jean-Paul, E-mail: jpcrocombette@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, UPSay, F-91191 Gif-sur-Yvette (France); Van Brutzel, Laurent [CEA, DEN, Service de Corrosion et du Comportement des Matériaux dans leur Environnement, UPSay, F-91191 Gif-sur-Yvette (France); Simeone, David [CEA, DEN, Service de Recherches de Métallurgie Appliqué, Matériaux Fonctionnels pour l' Energie, CNRS-CEA-ECP, UPSay, F-91191 Gif-sur-Yvette (France); Luneville, Laurence [CEA, DEN, Service d' Etudes des Réacteurs et de Mathématiques Appliquées, Matériaux Fonctionnels pour l' Energie, CNRS-CEA-ECP, UPSay, F-91191 Gif-sur-Yvette (France)

2016-06-15

Displacement cascades have been calculated in two ordered alloys (Ni{sub 3}Al and UO{sub 2}) in the molecular dynamics framework using the CMDC (Cell Molecular Dynamics for Cascade) code (J.-P. Crocombette and T. Jourdan, Nucl. Instrum. Meth. B 352, 9 (2015)) for energies ranking between 0.1 and 580 keV. The defect production has been compared to the prediction of the NRT (Norgett, Robinson and Torrens) standard. One observes a decrease with energy of the number of defects compared to the NRT prediction at intermediate energies but, unlike what is commonly observed in elemental solids, the number of produced defects does not always turn to a linear variation with ballistic energy at high energies. The fragmentation of the cascade into subcascades has been studied through the analysis of surviving defect pockets. It appears that the common knowledge equivalence of linearity of defect production and subcascades division does not hold in general for alloys. We calculate the average number of subcascades and average number of defects per subcascades as a function of ballistic energy. We find an unexpected variety of behaviors for these two average quantities above the threshold for subcascade formation.

Molecular dynamics simulations of high energy cascade in ordered alloys: Defect production and subcascade division

International Nuclear Information System (INIS)

Crocombette, Jean-Paul; Van Brutzel, Laurent; Simeone, David; Luneville, Laurence

2016-01-01

Displacement cascades have been calculated in two ordered alloys (Ni_3Al and UO_2) in the molecular dynamics framework using the CMDC (Cell Molecular Dynamics for Cascade) code (J.-P. Crocombette and T. Jourdan, Nucl. Instrum. Meth. B 352, 9 (2015)) for energies ranking between 0.1 and 580 keV. The defect production has been compared to the prediction of the NRT (Norgett, Robinson and Torrens) standard. One observes a decrease with energy of the number of defects compared to the NRT prediction at intermediate energies but, unlike what is commonly observed in elemental solids, the number of produced defects does not always turn to a linear variation with ballistic energy at high energies. The fragmentation of the cascade into subcascades has been studied through the analysis of surviving defect pockets. It appears that the common knowledge equivalence of linearity of defect production and subcascades division does not hold in general for alloys. We calculate the average number of subcascades and average number of defects per subcascades as a function of ballistic energy. We find an unexpected variety of behaviors for these two average quantities above the threshold for subcascade formation.

Resonance scattering of Rayleigh waves by a mass defect

International Nuclear Information System (INIS)

Croitoru, M.; Grecu, D.

1978-06-01

The resonance scattering of an incident Rayleigh wave by a mass defect extending over a small cylindrical region situated in the surface of a semi-infinite isotropic, elastic medium is investigated by means of the Green's function method. The form of the differential cross-section for the scattering into different channels exhibits a strong resonance phenomenon at two frequencies. The expression of the resonance frequencies as well as of the corresponding widths depends on the relative change in mass density. The main assumption that the wavelengths of incoming and scattered wave are large compared to the defect dimension implies a large relative mass-density change. (author)

High density matter at RHIC

Indian Academy of Sciences (India)

QCD predicts a phase transition between hadronic matter and a quark-gluon plasma at high energy density. The relativistic heavy ion collider (RHIC) at Brookhaven National Laboratory is a new facility dedicated to the experimental study of matter under extreme conditions. Already the first round of experimental results at ...

Edge operational space for high density/high confinement ELMY H-modes in JET

International Nuclear Information System (INIS)

Sartori, R.; Saibene, G.; Loarte, A.

2002-01-01

This paper discusses how the proximity to the L-H threshold affects the confinement of ELMy H-modes at high density. The largest reduction in confinement at high density is observed at the transition from the Type I to the Type III ELMy regime. At medium plasma triangularity, δ≅0.3 (where δ is the average triangularity at the separatrix), JET experiments show that by increasing the margin above the L-H threshold power and maintaining the edge temperature above the critical temperature for the transition to Type III ELMs, it is possible to avoid the degradation of the pedestal pressure with density, normally observed at lower power. As a result, the range of achievable densities (both in the core and in the pedestal) is increased. At high power above the L-H threshold power the core density was equal to the Greenwald limit with H97≅0.9. There is evidence that a mixed regime of Type I and Type II ELMs has been obtained at this intermediate triangularity, possibly as a result of this increase in density. At higher triangularity, δ≅0.5, the power required to achieve similar results is lower. (author)

TEM assessment of defects in (CdHg)Te heterostructures

International Nuclear Information System (INIS)

Lawson-Jack, S.G.; Jones, I.P.; Williams, D.J.; Astles, M.G.

1991-01-01

This paper reports on transmission electron microscopy used to assess the defect contents of the various layers and interfaces in (CdHg)Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3 μm thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2 left-angle 110 right-angle and either lie approximately parallel or inclined at an angle of ∼ 60 degrees to the interfactial plane

The study of defects in metallic alloys by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Romero, R.; Salgueiro, W.; Somoza, A.

1990-01-01

Positron annihilation spectroscopy (PAS) has become in a very useful non destructive testing to the study of condensed matter. Specially, in the last two decades, with the advent of solid state detectors and high-resolution time spectrometers. The basic information obtained with PAS in solid-state physics is on electronic structure in free defect materials. However, positron annihilation techniques (lifetime, angular correlation and Doppler broadening) have been succesfully applied to study crystal lattice defects with lower-than-average electron density, such as vacancies, small vacancy clusters, etc.. In this sense, information about: vacancy formation and migration energies, dislocations, grain boundaries, solid-solid phase transformation and radiation damage was obtained. In this work the application of the positron lifetime technique to study the thermal effects on a fine-grained superplastic Al-Ca-Zn alloy and the quenched-in defects in monocrystals of β Cu-Zn-Al alloy for several quenching temperatures is shown. (Author) [es

Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

KAUST Repository

Foronda, Humberto M.

2017-11-23

In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.

Defect enhanced diffusion process and hydrogen delayed fracture in high strength steels

International Nuclear Information System (INIS)

Lung, C.W.; Mu Zaiqin.

1985-10-01

A defect enhanced diffusion model for hydrogen delayed fracture in high strength steels is suggested. It is shown that the rate of crack growth is dependent on the square or higher power of the stress intensity factor which is consistent with recent experiments. (author)

Point defect engineering strategies to retard phosphorous diffusion in germanium

KAUST Repository

Tahini, H. A.; Chroneos, Alexander I.; Grimes, Robin W.; Schwingenschlö gl, Udo; Bracht, Hartmut A.

2013-01-01

The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

Purity and Defect Characterization of Single-Wall Carbon Nanotubes Using Raman Spectroscopy

Directory of Open Access Journals (Sweden)

Yasumitsu Miyata

2011-01-01

Full Text Available We investigated the purity and defects of single-wall carbon nanotubes (SWCNTs produced by various synthetic methods including chemical vapor deposition, arc discharge, and laser ablation. The SWCNT samples were characterized using scanning electron microscopy (SEM, thermogravimetric analysis (TGA, and Raman spectroscopy. Quantitative analysis of SEM images suggested that the G-band Raman intensity serves as an index for the purity. By contrast, the intensity ratio of G-band to D-band (G/D ratio reflects both the purity and the defect density of SWCNTs. The combination of G-band intensity and G/D ratio is useful for a quick, nondestructive evaluation of the purity and defect density of a SWCNT sample.

Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

Energy Technology Data Exchange (ETDEWEB)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

2016-05-15

low defect growth rate of 0.032/cm{sup 2}/h (t > τ) have been measured. At the end of the storage test (2003 h), the defect density remains very low, i.e., only 50/cm{sup 2}. On the other hand, the device with the single PVD-deposited SiO barrier layer shows no significant lag time (τ ∼ 0), and the number of defects grows linearly from initial time with a high occurrence rate of 0.517/cm{sup 2}/h. This is coherent with the pinhole-full nature of fresh, PVD-deposited, SiO films. At intermediate times, a second regime shows a lower defect occurrence rate of 0.062/cm{sup 2}/h. At a longer time span (t > 1200 h), the SiO barrier begins to degrade, and a localized crystallization onto the oxide surface, giving rise to new defects (occurrence rate 0.461/cm{sup 2}/h), could be observed. At the end of the test (2003 h), single SiO films show a very high defect density of 600/cm{sup 2}. Interestingly, the SiO surface in the Al{sub 2}O{sub 3}/SiO device does not appeared crystallized at a high time span, suggesting that the crystallization observed on the SiO surface in the AlQ{sub 3}/SiO device rather originates into the AlQ{sub 3} layer, due to high humidity ingress on the organic layer through SiO pinholes. This has been confirmed by atomic force microscopy surface imaging of the AlQ{sub 3}/SiO surface showing a central hole in the crystallization zone with a 60 nm depth, deeper than SiO thickness (25 nm). Using the organic AlQ{sub 3} sensor, the different observations made in this work give a quantitative comparison of defects' occurrence and growth in ALD-deposited versus PVD-deposited oxide films, as well as in their combination PVD/ALD and ALD/PVD.

Growth limitation of Lemna minor due to high plant density

NARCIS (Netherlands)

Driever, S.M.; Nes, van E.H.; Roijackers, R.M.M.

2005-01-01

The effect of high population densities on the growth rate of Lemna minor (L.) was studied under laboratory conditions at 23°C in a medium with sufficient nutrients. At high population densities, we found a non-linear decreasing growth rate with increasing L. minor density. Above a L. minor biomass

Density-dependent phonoriton states in highly excited semiconductors

International Nuclear Information System (INIS)

Nguyen Hong Quang; Nguyen Minh Khue; Nguyen Que Huong

1995-09-01

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors. (author). 18 refs, 3 figs

Design and implementation of a S-parameter wafer defect scanner

International Nuclear Information System (INIS)

Naik, P.S.; Beling, C.D.; Fung, S.

2004-01-01

We describe the design and implementation of a real-time automated scanning system that gives an S-parameter image of a semiconductor wafer, thus allowing the density of vacancy type defects to be shown as a function of position on the wafer. A conventional 22 Na positron source of 0.5 mm diameter rasters across 5 x 5 cm 2 region of two times per hour in rectilinear motion. Gamma ray energies E γ are processed using a standard HP Ge spectroscopy system and a 14 bit nuclear ADC. Over a period of 1-2 days a high resolution 128 x 128 pixel image with 256 colours (scaled to the S-parameter range) can be formed as a wafer defect map. The system is reliable, interactive and user-friendly (patent pending 2003). (orig.)

F + centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

Science.gov (United States)

Annenkov, Y. M.; Surzhikov, A. P.; Surzhikov, V. P.; Pogrebnjak, A. D.

1981-07-01

Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.

Characterization of point defects in CdTe by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

2016-06-13

Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

Multiplexed, high density electrophysiology with nanofabricated neural probes.

Directory of Open Access Journals (Sweden)

Jiangang Du

Full Text Available Extracellular electrode arrays can reveal the neuronal network correlates of behavior with single-cell, single-spike, and sub-millisecond resolution. However, implantable electrodes are inherently invasive, and efforts to scale up the number and density of recording sites must compromise on device size in order to connect the electrodes. Here, we report on silicon-based neural probes employing nanofabricated, high-density electrical leads. Furthermore, we address the challenge of reading out multichannel data with an application-specific integrated circuit (ASIC performing signal amplification, band-pass filtering, and multiplexing functions. We demonstrate high spatial resolution extracellular measurements with a fully integrated, low noise 64-channel system weighing just 330 mg. The on-chip multiplexers make possible recordings with substantially fewer external wires than the number of input channels. By combining nanofabricated probes with ASICs we have implemented a system for performing large-scale, high-density electrophysiology in small, freely behaving animals that is both minimally invasive and highly scalable.

Double trouble at high density:

DEFF Research Database (Denmark)

Gergs, André; Palmqvist, Annemette; Preuss, Thomas G

2014-01-01

Population size is often regulated by negative feedback between population density and individual fitness. At high population densities, animals run into double trouble: they might concurrently suffer from overexploitation of resources and also from negative interference among individuals...... regardless of resource availability, referred to as crowding. Animals are able to adapt to resource shortages by exhibiting a repertoire of life history and physiological plasticities. In addition to resource-related plasticity, crowding might lead to reduced fitness, with consequences for individual life...... history. We explored how different mechanisms behind resource-related plasticity and crowding-related fitness act independently or together, using the water flea Daphnia magna as a case study. For testing hypotheses related to mechanisms of plasticity and crowding stress across different biological levels...

Mechanical coupling limits the density and quality of self-organized carbon nanotube growth

Science.gov (United States)

Bedewy, Mostafa; Hart, A. John

2013-03-01

Aligned carbon nanotube (CNT) structures are promising for many applications; however, as-grown CNT "forests" synthesized by chemical vapor deposition (CVD) are typically low-density and mostly comprise tortuous defective CNTs. Here, we present evidence that the density and alignment of self-organized CNT growth is limited by mechanical coupling among CNTs in contact, in combination with their diameter-dependent growth rates. This study is enabled by comprehensive X-ray characterization of the spatially and temporally-varying internal morphology of CNT forests. Based on this data, we model the time evolution and diameter-dependent scaling of the ensuing mechanical forces on catalyst nanoparticles during CNT growth, which arise from the mismatch between the collective lengthening rate of the forest and the diameter-dependent growth rates of individual CNTs. In addition to enabling self-organization of CNTs into forests, time-varying forces between CNTs in contact dictate the hierarchical tortuous morphology of CNT forests, and may be sufficient to influence the structural quality of CNTs. These forces reach a maximum that is coincident with the maximum density observed in our growth process, and are proportional to CNT diameter. Therefore, we propose that improved manufacturing strategies for self-organized CNTs should consider both chemical and mechanical effects. This may be especially necessary to achieve high density CNT forests with low defect density, such as for improved thermal interfaces and high-permeability membranes.Aligned carbon nanotube (CNT) structures are promising for many applications; however, as-grown CNT "forests" synthesized by chemical vapor deposition (CVD) are typically low-density and mostly comprise tortuous defective CNTs. Here, we present evidence that the density and alignment of self-organized CNT growth is limited by mechanical coupling among CNTs in contact, in combination with their diameter-dependent growth rates. This study is

Defect production due to quenching through a multicritical point

International Nuclear Information System (INIS)

Divakaran, Uma; Mukherjee, Victor; Dutta, Amit; Sen, Diptiman

2009-01-01

We study the generation of defects when a quantum spin system is quenched through a multicritical point by changing a parameter of the Hamiltonian as t/τ, where τ is the characteristic timescale of quenching. We argue that when a quantum system is quenched across a multicritical point, the density of defects (n) in the final state is not necessarily given by the Kibble–Zurek scaling form n∼1/τ dν/(zν+1) , where d is the spatial dimension, and ν and z are respectively the correlation length and dynamical exponent associated with the quantum critical point. We propose a generalized scaling form of the defect density given by n∼1/τ d/(2z 2 ) , where the exponent z 2 determines the behavior of the off-diagonal term of the 2 × 2 Landau–Zener matrix at the multicritical point. This scaling is valid not only at a multicritical point but also at an ordinary critical point

A study of point defects in quenched stainless steels

International Nuclear Information System (INIS)

Kheloufi, Khelifa.

1977-07-01

Thin foils of stainless steels (18%Cr, 14%Ni) containing boron (50x10 -6 ) and stabilised with titanium have been quenched at different rates in order to observe secondary defects by transmission electron microscopy. A rapid quenching in gallium has not given any secondary defects either before or after annealing. But samples quenched from temperatures greater than 800 0 C-900 0 C exhibit a dislocation density approximately 10 9 cm/cm 3 . A vacancy concentration less than 10 -6 has been observed by positron annihilation technique. After a moderate quenching, any secondary defects has been observed. It is thus clear that boron does not favour the secondary defects formation as does phosphorus [fr

Description of radiation damage in diamond sensors using an effective defect model

International Nuclear Information System (INIS)

Kassel, Florian; Guthoff, Moritz; Dabrowski, Anne; Boer, Wim de

2017-01-01

The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

Description of radiation damage in diamond sensors using an effective defect model

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany); CERN, Meyrin (Switzerland); Guthoff, Moritz; Dabrowski, Anne [CERN, Meyrin (Switzerland); Boer, Wim de [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany)

2017-11-15

The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

Quasi-one-dimensional metals on semiconductor surfaces with defects

International Nuclear Information System (INIS)

Hasegawa, Shuji

2010-01-01

Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

High density data storage principle, technology, and materials

CERN Document Server

Zhu, Daoben

2009-01-01

The explosive increase in information and the miniaturization of electronic devices demand new recording technologies and materials that combine high density, fast response, long retention time and rewriting capability. As predicted, the current silicon-based computer circuits are reaching their physical limits. Further miniaturization of the electronic components and increase in data storage density are vital for the next generation of IT equipment such as ultra high-speed mobile computing, communication devices and sophisticated sensors. This original book presents a comprehensive introduction to the significant research achievements on high-density data storage from the aspects of recording mechanisms, materials and fabrication technologies, which are promising for overcoming the physical limits of current data storage systems. The book serves as an useful guide for the development of optimized materials, technologies and device structures for future information storage, and will lead readers to the fascin...

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

Science.gov (United States)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

KAUST Repository

Wang, H.

2014-05-13

Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.

Linear-scaling density-functional simulations of charged point defects in Al2O3 using hierarchical sparse matrix algebra.

Science.gov (United States)

Hine, N D M; Haynes, P D; Mostofi, A A; Payne, M C

2010-09-21

We present calculations of formation energies of defects in an ionic solid (Al(2)O(3)) extrapolated to the dilute limit, corresponding to a simulation cell of infinite size. The large-scale calculations required for this extrapolation are enabled by developments in the approach to parallel sparse matrix algebra operations, which are central to linear-scaling density-functional theory calculations. The computational cost of manipulating sparse matrices, whose sizes are determined by the large number of basis functions present, is greatly improved with this new approach. We present details of the sparse algebra scheme implemented in the ONETEP code using hierarchical sparsity patterns, and demonstrate its use in calculations on a wide range of systems, involving thousands of atoms on hundreds to thousands of parallel processes.

Fifth International Conference on High Energy Density Physics

Energy Technology Data Exchange (ETDEWEB)

Beg, Farhat

2017-07-05

The Fifth International Conference on High Energy Density Physics (ICHED 2015) was held in the Catamaran Hotel in San Diego from August 23-27, 2015. This meeting was the fifth in a series which began in 2008 in conjunction with the April meeting of the American Physical Society (APS). The main goal of this conference has been to bring together researchers from all fields of High Energy Density Science (HEDS) into one, unified meeting.

Irradiation defect structures in YBa2Cu3O7-x and their correlation with superconducting properties

International Nuclear Information System (INIS)

Kirk, M.A.

1990-11-01

We review our work on irradiation effects in single crystal YBa 2 CU 3 O 7-x . Transmission electron microscopy has been employed to study the defect microstructures produced by irradiations with fast neutrons, MeV ions (Kr, Ne and p), and electrons. The atomic structure within defect cascades was investigated using 50 keV Kr and Xe ion irradiations to low doses. Evidence is shown for an amorphous structure with some incoherent recrystallization within individual cascades. Correlation with enhancements in critical current density produced by neutron irradiations suggest that this cascade structure effectively pins magnetic flux lines. At sufficiently high fluences of fast neutrons or MeV Kr and Ne ions, a cellular microstructure is found. This structure consists of cells or microcrystallites of good cystalline and superconducting material (in the case of neutron irradiation), with cell walls of amorphous material. Full amorphization proceeds with the growth of cell wall volume. The formation of this microstructure coincides with a decrease in critical transport current, but is not observed by magnetization measurements. Increases in critical current density under proton irradiation, comparable to those produced by neutron irradiation, have been reported. The defect structure produced by proton irradiations is examined here and found to differ from that of neutron irradiations. Our most recent measurements of changes in critical temperature and current density, and defect microstructure following electron irradiations will be described. 20 refs., 6 figs

High performance H-mode plasmas at densities above the Greenwald limit

International Nuclear Information System (INIS)

Mahdavi, M.A.; Osborne, T.H.; Leonard, A.W.

2001-01-01

Densities up to 40 percent above the Greenwald limit are reproducibly achieved in high confinement (H ITER89p =2) ELMing H-mode discharges. Simultaneous gas fueling and divertor pumping were used to obtain these results. Confinement of these discharges, similar to moderate density H-mode, is characterized by a stiff temperature profile, and therefore sensitive to the density profile. A particle transport model is presented that explains the roles of divertor pumping and geometry for access to high densities. Energy loss per ELM at high density is a factor of five lower than predictions of an earlier scaling, based on data from lower density discharges. (author)

Novel nanostructured materials for high energy density supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Yuan, C.Z.; Zhang, X.G. [Nanjing Univ. of Aeronautics and Astronautics (China). College of Material Science and Engineering

2010-07-01

Researchers are currently examining methods of improving energy density while not sacrificing the high power density of supercapacitors. In this study, nanostructured materials assembled from nanometer-sized building blocks with mesoporosity were synthesized in order investigate diffusion time, kinetics, and capacitances. Petal-like cobalt hydroxide Co(OH){sub 2} mesocrystals, urchin-like Co(OH){sub 2} and dicobalt tetroxide (Co{sub 2}O{sub 4}) ordered arrays as well as N{sub i}O microspheres were assembled from 0-D nanoparticles, 1-D mesoporous nanowires and nanobelts, and 2-D mesoporous nanopetals. The study showed that all the synthesized nanostructured materials delivered larger energy densities while showing electrochemical stability at high rates.

ON THE ORIGIN OF THE HIGH COLUMN DENSITY TURNOVER IN THE H I COLUMN DENSITY DISTRIBUTION

International Nuclear Information System (INIS)

Erkal, Denis; Gnedin, Nickolay Y.; Kravtsov, Andrey V.

2012-01-01

We study the high column density regime of the H I column density distribution function and argue that there are two distinct features: a turnover at N H I ≈ 10 21 cm –2 , which is present at both z = 0 and z ≈ 3, and a lack of systems above N H I ≈ 10 22 cm –2 at z = 0. Using observations of the column density distribution, we argue that the H I-H 2 transition does not cause the turnover at N H I ≈ 10 21 cm –2 but can plausibly explain the turnover at N H I ∼> 10 22 cm –2 . We compute the H I column density distribution of individual galaxies in the THINGS sample and show that the turnover column density depends only weakly on metallicity. Furthermore, we show that the column density distribution of galaxies, corrected for inclination, is insensitive to the resolution of the H I map or to averaging in radial shells. Our results indicate that the similarity of H I column density distributions at z = 3 and 0 is due to the similarity of the maximum H I surface densities of high-z and low-z disks, set presumably by universal processes that shape properties of the gaseous disks of galaxies. Using fully cosmological simulations, we explore other candidate physical mechanisms that could produce a turnover in the column density distribution. We show that while turbulence within giant molecular clouds cannot affect the damped Lyα column density distribution, stellar feedback can affect it significantly if the feedback is sufficiently effective in removing gas from the central 2-3 kpc of high-redshift galaxies. Finally, we argue that it is meaningful to compare column densities averaged over ∼ kpc scales with those estimated from quasar spectra that probe sub-pc scales due to the steep power spectrum of H I column density fluctuations observed in nearby galaxies.

Research Trends on Defect and Life Assessment of High Temperature Structure

International Nuclear Information System (INIS)

Lee, Hyeong Yeon; Lee Jae Han

2008-01-01

This report presents the analysis on the state-of-the-art research trends on defect assessment and life evaluation of high temperature structure based on the papers presented in the two international conferences of ASME PVP 2007 / CREEP 8 which was held in 2007 and ICFDSM VI(International Conference on Fatigue Damage of Structural Materials VI) which was held in 2006

Blockage of ultrafast and directional diffusion of Li atoms on phosphorene with intrinsic defects.

Science.gov (United States)

Zhang, Ruiqi; Wu, Xiaojun; Yang, Jinlong

2016-02-21

The diffusion of Li in electrode materials is a key factor for the charging/discharging rate capacity of a Li-ion battery (LIB). Recently, two-dimensional phosphorene has been proposed as a very promising electrode material due to its ultrafast and directional lithium diffusion, as well as large energy capacity. Herein, on the basis of density functional theory, we report that intrinsic point defects, including vacancy and stone-wales defects, will block the directional ultrafast diffusion of lithium in phosphorene. On the defect-free phosphorene, diffusion of Li along the zig-zag lattice direction is 1.6 billion times faster than along the armchair lattice direction, and 260 times faster than that in graphite. After introducing intrinsic vacancy and stone-wales defect, the diffusion energy barrier of Li along the zig-zag lattice direction increases sharply to the range of 0.17-0.49 eV, which blocks the ultrafast migration of lithium along the zig-zag lattice direction. Moreover, the open circuit voltage increases with the emergence of defects, which is not suitable for anode materials. In addition, the formation energies of the defects in phosphorene are considerably lower than those in graphene and silicene sheet; therefore, it is highly important to generate defect-free phosphorene for LIB applications.

Visualization and automatic detection of defect distribution in GaN atomic structure from sampling Moiré phase.

Science.gov (United States)

Wang, Qinghua; Ri, Shien; Tsuda, Hiroshi; Kodera, Masako; Suguro, Kyoichi; Miyashita, Naoto

2017-09-19

Quantitative detection of defects in atomic structures is of great significance to evaluating product quality and exploring quality improvement process. In this study, a Fourier transform filtered sampling Moire technique was proposed to visualize and detect defects in atomic arrays in a large field of view. Defect distributions, defect numbers and defect densities could be visually and quantitatively determined from a single atomic structure image at low cost. The effectiveness of the proposed technique was verified from numerical simulations. As an application, the dislocation distributions in a GaN/AlGaN atomic structure in two directions were magnified and displayed in Moire phase maps, and defect locations and densities were detected automatically. The proposed technique is able to provide valuable references to material scientists and engineers by checking the effect of various treatments for defect reduction. © 2017 IOP Publishing Ltd.

Visual Field Defects and Retinal Ganglion Cell Losses in Human Glaucoma Patients

Science.gov (United States)

Harwerth, Ronald S.; Quigley, Harry A.

2007-01-01

Objective The depth of visual field defects are correlated with retinal ganglion cell densities in experimental glaucoma. This study was to determine whether a similar structure-function relationship holds for human glaucoma. Methods The study was based on retinal ganglion cell densities and visual thresholds of patients with documented glaucoma (Kerrigan-Baumrind, et al.) The data were analyzed by a model that predicted ganglion cell densities from standard clinical perimetry, which were then compared to histologic cell counts. Results The model, without free parameters, produced accurate and relatively precise quantification of ganglion cell densities associated with visual field defects. For 437 sets of data, the unity correlation for predicted vs. measured cell densities had a coefficient of determination of 0.39. The mean absolute deviation of the predicted vs. measured values was 2.59 dB, the mean and SD of the distribution of residual errors of prediction was -0.26 ± 3.22 dB. Conclusions Visual field defects by standard clinical perimetry are proportional to neural losses caused by glaucoma. Clinical Relevance The evidence for quantitative structure-function relationships provides a scientific basis of interpreting glaucomatous neuropathy from visual thresholds and supports the application of standard perimetry to establish the stage of the disease. PMID:16769839

Effect of mix proportion of high density concrete on compressive strength, density and radiation absorption

International Nuclear Information System (INIS)

Noor Azreen Masenwat; Mohamad Pauzi Ismail; Suhairy Sani; Ismail Mustapha; Nasharuddin Isa; Mohamad Haniza Mahmud; Mohammad Shahrizan Samsu

2014-01-01

To prevent radiation leaks at nuclear reactors, high-density concrete is used as an absorbent material for radiation from spreading into the environment. High-density concrete is a mixture of cement, sand, aggregate (usually high-density minerals) and water. In this research, hematite stone is used because of its mineral density higher than the granite used in conventional concrete mixing. Mix concrete in this study were divided into part 1 and part 2. In part 1, the concrete mixture is designed with the same ratio of 1: 2: 4 but differentiated in terms of water-cement ratio (0.60, 0.65, 0.70, 0.75, 0.80 ). Whereas, in part 2, the concrete mixture is designed to vary the ratio of 1: 1: 2, 1: 1.5: 3, 1: 2: 3, 1: 3: 6, 1: 2: 6 with water-cement ratio (0.7, 0.8, 0.85, 0.9). In each section, the division has also performed in a mixture of sand and fine sand hematite. Then, the physical characteristics of the density and the compressive strength of the mixture of part 1 and part 2 is measured. Comparisons were also made in terms of absorption of radiation by Cs-137 and Co-60 source for each mix. This paper describes and discusses the relationship between the concrete mixture ratio, the relationship with the water-cement ratio, compressive strength, density, different mixture of sand and fine sand hematite. (author)

Association between a specific apolipoprotein B mutation and familial defective apolipoprotein B-100

International Nuclear Information System (INIS)

Soria, L.F.; Ludwig, E.H.; Clarke, H.R.G.; McCarthy, B.J.; Vega, G.L.; Grundy, S.M.

1989-01-01

Familial defective apolipoprotein (apo) B-100 is a genetic disease that leads to hypercholesterolemia and to an increased serum concentration of low density lipoproteins that bind defectively to the apoB,E(LDL) receptor. The disorder appears to result from a mutation in the gene for apoB-100. Extensive sequence analysis of the two alleles of one subject heterozygous for the disorder has revealed a previously unreported mutation in the codon for amino acid 3500 that results in the substitution of glutamine for arginine. This same mutant allele occurs in six other, unrelated subjects and in eight affected relatives in two of these families. A partial haplotype of this mutant apoB-100 allele was constructed by sequence analysis and restriction enzyme digestion at positions where variations in the apoB-100 are known to occur. This haplotype is the same in three probands and four affected members of one family and lacks a polymorphic Xba I site whose presence has been correlated with high cholesterol levels. Thus, it appears that the mutation in the codon for amino acid 3500 (CGG → CAG), a CG mutational hot spot, defines a minor apoB-100 allele associated with defective low density lipoproteins and hypercholesterolemia

Intrinsic defect processes and O migration in PrBa(Co/Fe)2O5.5

KAUST Repository

Salawu, Omotayo Akande

2016-02-10

© 2016 The Royal Society of Chemistry. New mixed ion-electron conductors are desired to lower the operating temperature of solid oxide fuel cells. The O Frenkel energy and migration of O ions in PrBa(Co/Fe)2O5.5 are studied for this purpose by density functional theory. The electronic structure and charge redistribution during defect formation are analyzed. We demonstrate that Co → Fe substitution strongly affects the formation of defects and consequently the O migration. The low O Frenkel energy points to a high concentration of O vacancies. The migration of the O ions shows a distinct anisotropy.

Xenon Defects in Uranium Dioxide From First Principles and Interatomic Potentials

Science.gov (United States)

Thompson, Alexander

In this thesis, we examine the defect energetics and migration energies of xenon atoms in uranium dioxide (UO2) from first principles and interatomic potentials. We also parameterize new, accurate interatomic potentials for xenon and uranium dioxide. To achieve accurate energetics and provide a foundation for subsequent calculations, we address difficulties in finding consistent energetics within Hubbard U corrected density functional theory (DFT+U). We propose a method of slowly ramping the U parameter in order to guide the calculation into low energy orbital occupations. We find that this method is successful for a variety of materials. We then examine the defect energetics of several noble gas atoms in UO2 for several different defect sites. We show that the energy to incorporate large noble gas atoms into interstitial sites is so large that it is energetically favorable for a Schottky defect cluster to be created to relieve the strain. We find that, thermodynamically, xenon will rarely ever be in the interstitial site of UO2. To study larger defects associated with the migration of xenon in UO 2, we turn to interatomic potentials. We benchmark several previously published potentials against DFT+U defect energetics and migration barriers. Using a combination of molecular dynamics and nudged elastic band calculations, we find a new, low energy migration pathway for xenon in UO2. We create a new potential for xenon that yields accurate defect energetics. We fit this new potential with a method we call Iterative Potential Refinement that parameterizes potentials to first principles data via a genetic algorithm. The potential finds accurate energetics for defects with relatively low amounts of strain (xenon in defect clusters). It is important to find accurate energetics for these sorts of low-strain defects because they essentially represent small xenon bubbles. Finally, we parameterize a new UO2 potential that simultaneously yields accurate vibrational properties

Impurity-defect complexes in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Yang, L.H.; Fong, C.Y.; Nichols, C.S.

1991-01-01

The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

Defective pyrite (100) surface: An ab initio study

International Nuclear Information System (INIS)

Stirling, Andras; Bernasconi, Marco; Parrinello, Michele

2007-01-01

The structural and electronic properties of sulfur monomeric defects at the FeS 2 (100) surface have been studied by periodic density-functional calculations. We have shown that for a monomeric sulfur bound to an originally fivefold coordinated surface Fe site, the defect core features a triplet electronic ground state with unpaired spins localized on the exposed Fe-S unit. At this site, the iron and sulfur ions have oxidation states +4 and -2, respectively. This defect can be seen as produced via heterolytic bond breaking of the S-S sulfur dimer followed by a Fe-S redox reaction. The calculated sulfur 2p core-level shifts of the monomeric defects are in good agreement with experimental photoemission spectra, which allow a compelling assignment of the different spectroscopic features. The effect of water on the stability of the defective surface has also been studied, and it has been shown that the triplet state is stable against the wetting of the surface. The most important implications of the presence of the monomeric sulfur defect on the reactivity are also discussed

Polydispersity-driven topological defects as order-restoring excitations.

Science.gov (United States)

Yao, Zhenwei; Olvera de la Cruz, Monica

2014-04-08

The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

High density fuel storage rack

International Nuclear Information System (INIS)

Zezza, L.J.

1980-01-01

High storage density for spent nuclear fuel assemblies in a pool achieved by positioning fuel storage cells of high thermal neutron absorption materials in an upright configuration in a rack. The rack holds the cells at required pitch. Each cell carries an internal fuel assembly support, and most cells are vertically movable in the rack so that they rest on the pool bottom. Pool water circulation through the cells and around the fuel assemblies is permitted by circulation openings at the top and bottom of the cells above and below the fuel assemblies

A density functional study of NO{sub 2} adsorption on perfect and defective MgO (1 0 0) and Li/MgO (1 0 0) surfaces

Energy Technology Data Exchange (ETDEWEB)

Eid, Kh.M., E-mail: Khaled_eid@edu.asu.edu.eg [Physics Department, Faculty of Education, Ain Shams University, P.O. Box 11757, Cairo (Egypt); Ammar, H.Y. [Physics Department, Faculty of Education, Ain Shams University, P.O. Box 11757, Cairo (Egypt); Department of Physics, Faculty of Science, Najran University, Najran (Saudi Arabia)

2012-07-15

The density functional theory (DFT) in combination with embedded cluster model have been used to study the adsorption of nitrogen dioxide molecule (NO{sub 2}) on Li atom deposited on the surfaces of metal oxide MgO (1 0 0) on both anionic (O{sup 2-}) and defect (F{sub s} and F{sub s}{sup +}-centers) sites. The adsorption energy (E{sub ads}) of NO{sub 2} molecule (N-down as well as O-down) in different positions on O{sup -2}, F{sub s} and F{sub s}{sup +}-sites is considered. The geometrical optimizations have been done for the additive materials and MgO substrate surfaces. The formation energies have been evaluated for F{sub s} and F{sub s}{sup +} of MgO substrate surfaces. The ionization potential (IP) and electron affinity (eA) for defect free and defect containing surfaces have been calculated. The adsorption properties of NO{sub 2} are analyzed in terms of the adsorption energy, the electron donation (basicity), the elongation of N-O bond length and the atomic charges on adsorbed materials. The densities of states (DOS) have been calculated and used for examining the adsorption properties. The NO{sub 2} molecule is dissociated due to the interaction with the defective substrate surface (F{sub s}-site) producing an oxygen atom strongly chemisorbed to the vacancy of the substrate and gaseous NO far away from the surface. The presence of the Li atom increases the surface chemistry of the anionic O{sup 2-}-site of MgO substrate surfaces (converted from physisorption to chemisorption). On the other hand, the presence of the Li atom decreases the surface chemistry of the F{sub s} and F{sub s}{sup +}-sites of MgO substrate surfaces. Generally, the NO{sub 2} molecule is strongly adsorbed (chemisorption) on the MgO substrate surfaces containing F{sub s} and F{sub s}{sup +}-centers.

PyCDT: A Python toolkit for modeling point defects in semiconductors and insulators

Science.gov (United States)

Broberg, Danny; Medasani, Bharat; Zimmermann, Nils E. R.; Yu, Guodong; Canning, Andrew; Haranczyk, Maciej; Asta, Mark; Hautier, Geoffroy

2018-05-01

Point defects have a strong impact on the performance of semiconductor and insulator materials used in technological applications, spanning microelectronics to energy conversion and storage. The nature of the dominant defect types, how they vary with processing conditions, and their impact on materials properties are central aspects that determine the performance of a material in a certain application. This information is, however, difficult to access directly from experimental measurements. Consequently, computational methods, based on electronic density functional theory (DFT), have found widespread use in the calculation of point-defect properties. Here we have developed the Python Charged Defect Toolkit (PyCDT) to expedite the setup and post-processing of defect calculations with widely used DFT software. PyCDT has a user-friendly command-line interface and provides a direct interface with the Materials Project database. This allows for setting up many charged defect calculations for any material of interest, as well as post-processing and applying state-of-the-art electrostatic correction terms. Our paper serves as a documentation for PyCDT, and demonstrates its use in an application to the well-studied GaAs compound semiconductor. We anticipate that the PyCDT code will be useful as a framework for undertaking readily reproducible calculations of charged point-defect properties, and that it will provide a foundation for automated, high-throughput calculations.

Disclinations, dislocations, and continuous defects: A reappraisal

Science.gov (United States)

Kleman, M.; Friedel, J.

2008-01-01

Disclinations were first observed in mesomorphic phases. They were later found relevant to a number of ill-ordered condensed-matter media involving continuous symmetries or frustrated order. Disclinations also appear in polycrystals at the edges of grain boundaries; but they are of limited interest in solid single crystals, where they can move only by diffusion climb and, owing to their large elastic stresses, mostly appear in close pairs of opposite signs. The relaxation mechanisms associated with a disclination in its creation, motion, and change of shape involve an interplay with continuous or quantized dislocations and/or continuous disclinations. These are attached to the disclinations or are akin to Nye’s dislocation densities, which are particularly well suited for consideration here. The notion of an extended Volterra process is introduced, which takes these relaxation processes into account and covers different situations where this interplay takes place. These concepts are illustrated by a variety of applications in amorphous solids, mesomorphic phases, and frustrated media in their curved habit space. These often involve disclination networks with specific node conditions. The powerful topological theory of line defects considers only defects stable against any change of boundary conditions or relaxation processes compatible with the structure considered. It can be seen as a simplified case of the approach considered here, particularly suited for media of high plasticity or/and complex structures. It cannot analyze the dynamical properties of defects nor the elastic constants involved in their static properties; topological stability cannot guarantee energetic stability, and sometimes cannot distinguish finer details of the structure of defects.

Paramagnetic defects in hydrogenated amorphous carbon powders

International Nuclear Information System (INIS)

Keeble, D J; Robb, K M; Smith, G M; Mkami, H El; Rodil, S E; Robertson, J

2003-01-01

Hydrogenated amorphous carbon materials typically contain high concentrations of paramagnetic defects, the density of which can be quantified by electron paramagnetic resonance (EPR). In this work EPR measurements near 9.5, 94, and 189 GHz have been performed on polymeric and diamond-like hydrogenated amorphous carbon (a-C:H) powder samples. A similar single resonance line was observed at all frequencies for the two forms of a-C:H studied. No contributions to the spectrum from centres with resolved anisotropic g-values as reported earlier were detected. An increase in linewidth with microwave frequency was observed. Possible contributions to this frequency dependence are discussed

High Density GEOSAT/GM Altimeter Data

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The high density Geosat/GM altimeter data south of 30 S have finally arrived. In addition, ERS-1 has completed more than 6 cycles of its 35-day repeat track. These...

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

Energy Technology Data Exchange (ETDEWEB)

Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

2017-02-15

Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic defects and doping of monolayer NbSe2

OpenAIRE

Nguyen, Lan; Komsa, Hannu-Pekka; Khestanova, Ekaterina; Kashtiban, Reza J; Peters, Jonathan J.P.; Lawlor, Sean; Sanchez, Ana M.; Sloan, Jeremy; Gorbachev, Roman; Grigorieva, Irina; Krasheninnikov, Arkady V.; Haigh, Sarah

2017-01-01

We have investigated the structure of atomic defects within monolayer NbSe2 encapsulated in graphene by combining atomic resolution transmission electron microscope imaging, density functional theory (DFT) calculations, and strain mapping using geometric phase analysis. We demonstrate the presence of stable Nb and Se monovacancies in monolayer material and reveal that Se monovacancies are the most frequently observed defects, consistent with DFT calculations of their formation energy. We reve...

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Romano-Rodriguez, A.

1994-01-01

A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

The creation of high energy densities with antimatter beams

International Nuclear Information System (INIS)

Gibbs, W.R.; Kruk, J.W.; Rice Univ., Houston, TX

1989-01-01

The use of antiprotons (and antideuterons) for the study of the behavior of nuclear matter at high energy density is considered. It is shown that high temperatures and high energy densities can be achieved for small volumes. Also investigated is the strangeness production in antimatter annihilation. It is found that the high rate of Lambda production seen in a recent experiment is easily understood. The Lambda and K-short rapidity distributions are also reproduced by the model considered. 11 refs., 6 figs

Synergistic Interlayer and Defect Engineering in VS2 Nanosheets toward Efficient Electrocatalytic Hydrogen Evolution Reaction

KAUST Repository

Zhang, Junjun

2017-12-27

A simple one-pot solvothermal method is reported to synthesize VS2 nanosheets featuring rich defects and an expanded (001) interlayer spacing as large as 1.00 nm, which is a ≈74% expansion as relative to that (0.575 nm) of the pristine counterpart. The interlayer-expanded VS2 nanosheets show extraordinary kinetic metrics for electrocatalytic hydrogen evolution reaction (HER), exhibiting a low overpotential of 43 mV at a geometric current density of 10 mA cm-2 , a small Tafel slope of 36 mV dec-1 , and long-term stability of 60 h without any current fading. The performance is much better than that of the pristine VS2 with a normal interlayer spacing, and even comparable to that of the commercial Pt/C electrocatalyst. The outstanding electrocatalytic activity is attributed to the expanded interlayer distance and the generated rich defects. Increased numbers of exposed active sites and modified electronic structures are achieved, resulting in an optimal free energy of hydrogen adsorption (∆GH ) from density functional theory calculations. This work opens up a new door for developing transition-metal dichalcogenide nanosheets as high active HER electrocatalysts by interlayer and defect engineering.

Synergistic Interlayer and Defect Engineering in VS2 Nanosheets toward Efficient Electrocatalytic Hydrogen Evolution Reaction

KAUST Repository

Zhang, Junjun; Zhang, Chenhui; Wang, Zhenyu; Zhu, Jian; Wen, Zhiwei; Zhao, Xingzhong; Zhang, Xixiang; Xu, Jun; Lu, Zhouguang

2017-01-01

A simple one-pot solvothermal method is reported to synthesize VS2 nanosheets featuring rich defects and an expanded (001) interlayer spacing as large as 1.00 nm, which is a ≈74% expansion as relative to that (0.575 nm) of the pristine counterpart. The interlayer-expanded VS2 nanosheets show extraordinary kinetic metrics for electrocatalytic hydrogen evolution reaction (HER), exhibiting a low overpotential of 43 mV at a geometric current density of 10 mA cm-2 , a small Tafel slope of 36 mV dec-1 , and long-term stability of 60 h without any current fading. The performance is much better than that of the pristine VS2 with a normal interlayer spacing, and even comparable to that of the commercial Pt/C electrocatalyst. The outstanding electrocatalytic activity is attributed to the expanded interlayer distance and the generated rich defects. Increased numbers of exposed active sites and modified electronic structures are achieved, resulting in an optimal free energy of hydrogen adsorption (∆GH ) from density functional theory calculations. This work opens up a new door for developing transition-metal dichalcogenide nanosheets as high active HER electrocatalysts by interlayer and defect engineering.

High baryon density from relativistic heavy ion collisions

Energy Technology Data Exchange (ETDEWEB)

Pang, Y.; Kahana, S.H. [Brookhaven National Lab., Upton, NY (United States); Schlagel, T.J. [Brookhaven National Lab., Upton, NY (United States)]|[State Univ. of New York, Stony Brook, NY (United States)

1993-10-01

A quantitative model, based on hadronic physics, is developed and applied to heavy ion collisions at BNL-AGS energies. This model is in excellent agreement with observed particle spectra in heavy ion collisions using Si beams, where baryon densities of three and four times the normal nuclear matter density ({rho}{sub 0}) are reached. For Au on Au collisions, the authors predict the formation of matter at very high densities (up to 10 {rho}{sub 0}).

Serum osteoprotegerin levels and mammographic density among high-risk women.

Science.gov (United States)

Moran, Olivia; Zaman, Tasnim; Eisen, Andrea; Demsky, Rochelle; Blackmore, Kristina; Knight, Julia A; Elser, Christine; Ginsburg, Ophira; Zbuk, Kevin; Yaffe, Martin; Narod, Steven A; Salmena, Leonardo; Kotsopoulos, Joanne

2018-06-01

Mammographic density is a risk factor for breast cancer but the mechanism behind this association is unclear. The receptor activator of nuclear factor κB (RANK)/RANK ligand (RANKL) pathway has been implicated in the development of breast cancer. Given the role of RANK signaling in mammary epithelial cell proliferation, we hypothesized this pathway may also be associated with mammographic density. Osteoprotegerin (OPG), a decoy receptor for RANKL, is known to inhibit RANK signaling. Thus, it is of interest to evaluate whether OPG levels modify breast cancer risk through mammographic density. We quantified serum OPG levels in 57 premenopausal and 43 postmenopausal women using an enzyme-linked immunosorbent assay (ELISA). Cumulus was used to measure percent density, dense area, and non-dense area for each mammographic image. Subjects were classified into high versus low OPG levels based on the median serum OPG level in the entire cohort (115.1 pg/mL). Multivariate models were used to assess the relationship between serum OPG levels and the measures of mammographic density. Serum OPG levels were not associated with mammographic density among premenopausal women (P ≥ 0.42). Among postmenopausal women, those with low serum OPG levels had higher mean percent mammographic density (20.9% vs. 13.7%; P = 0.04) and mean dense area (23.4 cm 2 vs. 15.2 cm 2 ; P = 0.02) compared to those with high serum OPG levels after covariate adjustment. These findings suggest that low OPG levels may be associated with high mammographic density, particularly in postmenopausal women. Targeting RANK signaling may represent a plausible, non-surgical prevention option for high-risk women with high mammographic density, especially those with low circulating OPG levels.

Density Functional Methods for Shock Physics and High Energy Density Science

Science.gov (United States)

Desjarlais, Michael

2017-06-01

Molecular dynamics with density functional theory has emerged over the last two decades as a powerful and accurate framework for calculating thermodynamic and transport properties with broad application to dynamic compression, high energy density science, and warm dense matter. These calculations have been extensively validated against shock and ramp wave experiments, are a principal component of high-fidelity equation of state generation, and are having wide-ranging impacts on inertial confinement fusion, planetary science, and shock physics research. In addition to thermodynamic properties, phase boundaries, and the equation of state, one also has access to electrical conductivity, thermal conductivity, and lower energy optical properties. Importantly, all these properties are obtained within the same theoretical framework and are manifestly consistent. In this talk I will give a brief history and overview of molecular dynamics with density functional theory and its use in calculating a wide variety of thermodynamic and transport properties for materials ranging from ambient to extreme conditions and with comparisons to experimental data. I will also discuss some of the limitations and difficulties, as well as active research areas. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Defect complexes in carbon and boron nitride nanotubes

CSIR Research Space (South Africa)

Mashapa, MG

2012-05-01

Full Text Available The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented...

Regional absolute conductivity reconstruction using projected current density in MREIT

International Nuclear Information System (INIS)

Sajib, Saurav Z K; Kim, Hyung Joong; Woo, Eung Je; Kwon, Oh In

2012-01-01

Magnetic resonance electrical impedance tomography (MREIT) is a non-invasive technique for imaging the internal conductivity distribution in tissue within an MRI scanner, utilizing the magnetic flux density, which is introduced when a current is injected into the tissue from external electrodes. This magnetic flux alters the MRI signal, so that appropriate reconstruction can provide a map of the additional z-component of the magnetic field (B z ) as well as the internal current density distribution that created it. To extract the internal electrical properties of the subject, including the conductivity and/or the current density distribution, MREIT techniques use the relationship between the external injection current and the z-component of the magnetic flux density B = (B x , B y , B z ). The tissue studied typically contains defective regions, regions with a low MRI signal and/or low MRI signal-to-noise-ratio, due to the low density of nuclear magnetic resonance spins, short T 2 or T* 2 relaxation times, as well as regions with very low electrical conductivity, through which very little current traverses. These defective regions provide noisy B z data, which can severely degrade the overall reconstructed conductivity distribution. Injecting two independent currents through surface electrodes, this paper proposes a new direct method to reconstruct a regional absolute isotropic conductivity distribution in a region of interest (ROI) while avoiding the defective regions. First, the proposed method reconstructs the contrast of conductivity using the transversal J-substitution algorithm, which blocks the propagation of severe accumulated noise from the defective region to the ROI. Second, the proposed method reconstructs the regional projected current density using the relationships between the internal current density, which stems from a current injection on the surface, and the measured B z data. Combining the contrast conductivity distribution in the entire imaging

Morphodynamics of supercritical high-density turbidity currents

NARCIS (Netherlands)

Cartigny, M.

2012-01-01

Seafloor and outcrop observations combined with numerical and physical experiments show that turbidity currents are likely 1) to be in a supercritical flow state and 2) to carry high sediment concentrations (being of high-density). The thesis starts with an experimental study of bedforms

High-dose irradiation induces cell cycle arrest, apoptosis, and developmental defects during Drosophila oogenesis.

Directory of Open Access Journals (Sweden)

Hee Jin Shim

Full Text Available Ionizing radiation (IR treatment induces a DNA damage response, including cell cycle arrest, DNA repair, and apoptosis in metazoan somatic cells. Because little has been reported in germline cells, we performed a temporal analysis of the DNA damage response utilizing Drosophila oogenesis as a model system. Oogenesis in the adult Drosophila female begins with the generation of 16-cell cyst by four mitotic divisions of a cystoblast derived from the germline stem cells. We found that high-dose irradiation induced S and G2 arrests in these mitotically dividing germline cells in a grp/Chk1- and mnk/Chk2-dependent manner. However, the upstream kinase mei-41, Drosophila ATR ortholog, was required for the S-phase checkpoint but not for the G2 arrest. As in somatic cells, mnk/Chk2 and dp53 were required for the major cell death observed in early oogenesis when oocyte selection and meiotic recombination occurs. Similar to the unscheduled DNA double-strand breaks (DSBs generated from defective repair during meiotic recombination, IR-induced DSBs produced developmental defects affecting the spherical morphology of meiotic chromosomes and dorsal-ventral patterning. Moreover, various morphological abnormalities in the ovary were detected after irradiation. Most of the IR-induced defects observed in oogenesis were reversible and were restored between 24 and 96 h after irradiation. These defects in oogenesis severely reduced daily egg production and the hatch rate of the embryos of irradiated female. In summary, irradiated germline cells induced DSBs, cell cycle arrest, apoptosis, and developmental defects resulting in reduction of egg production and defective embryogenesis.

Foldable, High Energy Density Lithium Ion Batteries

Science.gov (United States)

Suresh, Shravan

Lithium Ion Batteries (LIBs) have become ubiquitous owing to its low cost, high energy density and, power density. Due to these advantages, LIBs have garnered a lot of attention as the primary energy storage devices in consumer electronics and electric vehicles. Recent advances in the consumer electronics research and, the drive to reduce greenhouse gases have created a demand for a shape conformable, high energy density batteries. This thesis focuses on the aforementioned two aspects of LIBs: (a) shape conformability (b) energy density and provides potential solutions to enhance them. This thesis is divided into two parts viz. (i) achieving foldability in batteries and, (ii) improving its energy density. Conventional LIBs are not shape conformable due to two limitations viz. inelasticity of metallic foils, and delamination of the active materials while bending. In the first part of the thesis (in Chapter 3), this problem is solved by replacing metallic current collector with Carbon Nanotube Macrofilms (CNMs). CNMs are superelastic films comprising of porous interconnected nanotube network. Using Molecular Dynamics (MD) simulation, we found that in the presence of an interconnected nanotube network CNMs can be fully folded. This is because the resultant stress due to bending and, the effective bending angle at the interface is reduced due to the network of nanotubes. Hence, unlike an isolated nanotube (which ruptures beyond 120 degrees of bending), a network of nanotubes can be completely folded. Thus, by replacing metallic current collector foils with CNMs, the flexibility limitation of a conventional LIB can be transcended. The second part of this thesis focusses on enhancing the energy density of LIBs. Two strategies adopted to achieve this goal are (a) removing the dead weight of the batteries, and (b) incorporating high energy density electrode materials. By incorporating CNMs, the weight of the batteries was reduced by 5-10 times due to low mass loading of

Surface-defect induced modifications in the optical properties of α-MnO_2 nanorods

International Nuclear Information System (INIS)

John, Reenu Elizabeth; Chandran, Anoop; Thomas, Marykutty; Jose, Joshy; George, K.C.

2016-01-01

Graphical abstract: - Highlights: • Alpha-MnO_2 nanorods are prepared by chemical method. • Difference in surface defect density is achieved. • Characterized using XRD, Rietveld, XPS, EDS, HR-TEM, BET, UV–vis absorption spectroscopy and PL spectroscopy. • Explains the bandstructure modification due to Jahn–Teller distortions using crystal field theory. • Modification in the intensity of optical emissions related to defect levels validates the concept of surface defect induced tuning of optical properties. - Abstract: The science of defect engineering via surface tuning opens a new route to modify the inherent properties of nanomaterials for advanced functional and practical applications. In this work, two independent synthesis methods (hydrothermal and co-precipitation) are adopted to fabricate α-MnO_2 nanorods with different defect structures so as to understand the effect of surface modifications on their optical properties. The crystal structure and morphology of samples are investigated with the aid of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Atomic composition calculated from energy dispersive spectroscopy (EDS) confirms non-stoichiometry of the samples. The surface properties and chemical environment are thoroughly studied using X-ray photoelectron spectroscopy (XPS) and Brunauer–Emmett–Teller (BET) analysis. Bond angle variance and bond valence sum are determined to validate distortions in the basic MnO_6 octahedron. The surface studies indicate that the concentration of Jahn–Teller manganese (III) (Mn"3"+) ion in the samples differ from each other which results in their distinct properties. Band structure modifications due to Jahn–Teller distortion are examined with the aid of ultraviolet–visible (UV) reflectance and photoluminescence (PL) studies. The dual peaks obtained in derivative spectrum conflict the current concept on the bandgap energy of MnO_2. These studies suggest that

Defect-induced Au precipitation in Fe–Au and Fe–Au–B–N alloys studied by in situ small-angle neutron scattering

International Nuclear Information System (INIS)

Zhang, S.; Kohlbrecher, J.; Tichelaar, F.D.; Langelaan, G.; Brück, E.; Zwaag, S. van der; Dijk, N.H. van

2013-01-01

Nanoscale Au precipitation in high-purity Fe–Au and Fe–Au–B–N alloys has been studied by in situ small-angle neutron scattering during isothermal aging at 550 °C and complementary ex situ transmission electron microscopy. The high temperature precipitation behavior in samples having received different degrees of cold deformation has been studied to explore the potential self-healing of deformation-induced defects by Au precipitation. It is found that dislocations induced by prior plastic deformation strongly facilitate the formation of Au precipitates, as no significant precipitation is observed for undeformed samples. Defect-induced Au precipitates are formed both at dislocations and along grain boundaries where the defect density is high. The fact that the Au atoms only precipitate on deformation-induced defects demonstrates that solute gold atoms act as efficient self-healing agents in the ferrous matrix. The addition of B and N is found to retard the Au precipitation

Biopolymer-nanocarbon composite electrodes for use as high-energy high-power density electrodes

Science.gov (United States)

Karakaya, Mehmet; Roberts, Mark; Arcilla-Velez, Margarita; Zhu, Jingyi; Podila, Ramakrishna; Rao, Apparao

2014-03-01

Supercapacitors (SCs) address our current energy storage and delivery needs by combining the high power, rapid switching, and exceptional cycle life of a capacitor with the high energy density of a battery. Although activated carbon is extensively used as a supercapacitor electrode due to its inexpensive nature, its low specific capacitance (100-120 F/g) fundamentally limits the energy density of SCs. We demonstrate that a nano-carbon based mechanically robust, electrically conducting, free-standing buckypaper electrode modified with an inexpensive biorenewable polymer, viz., lignin increases the electrode's specific capacitance (~ 600-700 F/g) while maintaining rapid discharge rates. In these systems, the carbon nanomaterials provide the high surface area, electrical conductivity and porosity, while the redox polymers provide a mechanism for charge storage through Faradaic charge transfer. The design of redox polymers and their incorporation into nanomaterial electrodes will be discussed with a focus on enabling high power and high energy density electrodes. Research supported by US NSF CMMI Grant 1246800.

Breast density estimation from high spectral and spatial resolution MRI

Science.gov (United States)

Li, Hui; Weiss, William A.; Medved, Milica; Abe, Hiroyuki; Newstead, Gillian M.; Karczmar, Gregory S.; Giger, Maryellen L.

2016-01-01

Abstract. A three-dimensional breast density estimation method is presented for high spectral and spatial resolution (HiSS) MR imaging. Twenty-two patients were recruited (under an Institutional Review Board--approved Health Insurance Portability and Accountability Act-compliant protocol) for high-risk breast cancer screening. Each patient received standard-of-care clinical digital x-ray mammograms and MR scans, as well as HiSS scans. The algorithm for breast density estimation includes breast mask generating, breast skin removal, and breast percentage density calculation. The inter- and intra-user variabilities of the HiSS-based density estimation were determined using correlation analysis and limits of agreement. Correlation analysis was also performed between the HiSS-based density estimation and radiologists’ breast imaging-reporting and data system (BI-RADS) density ratings. A correlation coefficient of 0.91 (pdensity estimations. An interclass correlation coefficient of 0.99 (pdensity estimations. A moderate correlation coefficient of 0.55 (p=0.0076) was observed between HiSS-based breast density estimations and radiologists’ BI-RADS. In summary, an objective density estimation method using HiSS spectral data from breast MRI was developed. The high reproducibility with low inter- and low intra-user variabilities shown in this preliminary study suggest that such a HiSS-based density metric may be potentially beneficial in programs requiring breast density such as in breast cancer risk assessment and monitoring effects of therapy. PMID:28042590

Probing graphene defects and estimating graphene quality with optical microscopy

International Nuclear Information System (INIS)

Lai, Shen; Kyu Jang, Sung; Jae Song, Young; Lee, Sungjoo

2014-01-01

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality

Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

Science.gov (United States)

Davtyan, Arman; Biermanns, Andreas; Loffeld, Otmar; Pietsch, Ullrich

2016-06-01

Coherent x-ray diffraction imaging is used to measure diffraction patterns from individual highly defective nanowires, showing a complex speckle pattern instead of well-defined Bragg peaks. The approach is tested for nanowires of 500 nm diameter and 500 nm height predominately composed by zinc-blende (ZB) and twinned zinc-blende (TZB) phase domains. Phase retrieval is used to reconstruct the measured 2-dimensional intensity patterns recorded from single nanowires with 3.48 nm and 0.98 nm spatial resolution. Whereas the speckle amplitudes and distribution are perfectly reconstructed, no unique solution could be obtained for the phase structure. The number of phase switches is found to be proportional to the number of measured speckles and follows a narrow number distribution. Using data with 0.98 nm spatial resolution the mean number of phase switches is in reasonable agreement with estimates taken from TEM. However, since the resolved phase domain still is 3-4 times larger than a single GaAs bilayer we explain the non-ambiguous phase reconstruction by the fact that depending on starting phase and sequence of subroutines used during the phase retrieval the retrieved phase domain host a different sequence of randomly stacked bilayers. Modelling possible arrangements of bilayer sequences within a phase domain demonstrate that the complex speckle patterns measured can indeed be explained by the random arrangement of the ZB and TZB phase domains.

Point defect weakened thermal contraction in monolayer graphene.

Science.gov (United States)

Zha, Xian-Hu; Zhang, Rui-Qin; Lin, Zijing

2014-08-14

We investigate the thermal expansion behaviors of monolayer graphene and three configurations of graphene with point defects, namely the replacement of one carbon atom with a boron or nitrogen atom, or of two neighboring carbon atoms by boron-nitrogen atoms, based on calculations using first-principles density functional theory. It is found that the thermal contraction of monolayer graphene is significantly decreased by point defects. Moreover, the corresponding temperature for negative linear thermal expansion coefficient with the maximum absolute value is reduced. The cause is determined to be point defects that enhance the mechanical strength of graphene and then reduce the amplitude and phonon frequency of the out-of-plane acoustic vibration mode. Such defect weakening of graphene thermal contraction will be useful in nanotechnology to diminish the mismatching or strain between the graphene and its substrate.

High dislocation density of tin induced by electric current

International Nuclear Information System (INIS)

Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

2015-01-01

A dislocation density of as high as 10 17 /m 2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10 3 A/ cm 2 . The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining

Preparation and characterization of high-Tc superconducting thin films with high critical current densities

International Nuclear Information System (INIS)

Vase, P.

1991-08-01

The project was carried out in relation to possible cable and electronics applications of high-T c materials. Laser ablation was used as the deposition technique because of its stoichiometry conservation. Films were made in the YBa 2 Cu 3 O 7 compound due to its relatively simple stoichiometry compared to other High-T c compounds. Much attention was paid to the critical current density. A very high critical current density was reached. By using texture analysis by X-ray diffraction, it was found that films with high critical current densities were epitaxial, while films with low critical current densities contained several crystalline orientations. Four techniques for patterning the films were used - photo lithography and wet etch, laser ablation lithography, laser writing and electron beam lithography and ion milling. Sub-micron patterning has been demonstrated without degradation of the superconducting properties. The achieved patterning resolution is sufficient for preparation of many superconducting components. (AB)

High-Density Quantum Sensing with Dissipative First Order Transitions

Science.gov (United States)

Raghunandan, Meghana; Wrachtrup, Jörg; Weimer, Hendrik

2018-04-01

The sensing of external fields using quantum systems is a prime example of an emergent quantum technology. Generically, the sensitivity of a quantum sensor consisting of N independent particles is proportional to √{N }. However, interactions invariably occurring at high densities lead to a breakdown of the assumption of independence between the particles, posing a severe challenge for quantum sensors operating at the nanoscale. Here, we show that interactions in quantum sensors can be transformed from a nuisance into an advantage when strong interactions trigger a dissipative phase transition in an open quantum system. We demonstrate this behavior by analyzing dissipative quantum sensors based upon nitrogen-vacancy defect centers in diamond. Using both a variational method and a numerical simulation of the master equation describing the open quantum many-body system, we establish the existence of a dissipative first order transition that can be used for quantum sensing. We investigate the properties of this phase transition for two- and three-dimensional setups, demonstrating that the transition can be observed using current experimental technology. Finally, we show that quantum sensors based on dissipative phase transitions are particularly robust against imperfections such as disorder or decoherence, with the sensitivity of the sensor not being limited by the T2 coherence time of the device. Our results can readily be applied to other applications in quantum sensing and quantum metrology where interactions are currently a limiting factor.

High-Density Quantum Sensing with Dissipative First Order Transitions.

Science.gov (United States)

Raghunandan, Meghana; Wrachtrup, Jörg; Weimer, Hendrik

2018-04-13

The sensing of external fields using quantum systems is a prime example of an emergent quantum technology. Generically, the sensitivity of a quantum sensor consisting of N independent particles is proportional to sqrt[N]. However, interactions invariably occurring at high densities lead to a breakdown of the assumption of independence between the particles, posing a severe challenge for quantum sensors operating at the nanoscale. Here, we show that interactions in quantum sensors can be transformed from a nuisance into an advantage when strong interactions trigger a dissipative phase transition in an open quantum system. We demonstrate this behavior by analyzing dissipative quantum sensors based upon nitrogen-vacancy defect centers in diamond. Using both a variational method and a numerical simulation of the master equation describing the open quantum many-body system, we establish the existence of a dissipative first order transition that can be used for quantum sensing. We investigate the properties of this phase transition for two- and three-dimensional setups, demonstrating that the transition can be observed using current experimental technology. Finally, we show that quantum sensors based on dissipative phase transitions are particularly robust against imperfections such as disorder or decoherence, with the sensitivity of the sensor not being limited by the T_{2} coherence time of the device. Our results can readily be applied to other applications in quantum sensing and quantum metrology where interactions are currently a limiting factor.

Changing perceptions of hunger on a high nutrient density diet

Directory of Open Access Journals (Sweden)

Glaser Dale

2010-11-01

Full Text Available Abstract Background People overeat because their hunger directs them to consume more calories than they require. The purpose of this study was to analyze the changes in experience and perception of hunger before and after participants shifted from their previous usual diet to a high nutrient density diet. Methods This was a descriptive study conducted with 768 participants primarily living in the United States who had changed their dietary habits from a low micronutrient to a high micronutrient diet. Participants completed a survey rating various dimensions of hunger (physical symptoms, emotional symptoms, and location when on their previous usual diet versus the high micronutrient density diet. Statistical analysis was conducted using non-parametric tests. Results Highly significant differences were found between the two diets in relation to all physical and emotional symptoms as well as the location of hunger. Hunger was not an unpleasant experience while on the high nutrient density diet, was well tolerated and occurred with less frequency even when meals were skipped. Nearly 80% of respondents reported that their experience of hunger had changed since starting the high nutrient density diet, with 51% reporting a dramatic or complete change in their experience of hunger. Conclusions A high micronutrient density diet mitigates the unpleasant aspects of the experience of hunger even though it is lower in calories. Hunger is one of the major impediments to successful weight loss. Our findings suggest that it is not simply the caloric content, but more importantly, the micronutrient density of a diet that influences the experience of hunger. It appears that a high nutrient density diet, after an initial phase of adjustment during which a person experiences "toxic hunger" due to withdrawal from pro-inflammatory foods, can result in a sustainable eating pattern that leads to weight loss and improved health. A high nutrient density diet provides

COMPARISON BETWEEN WOOD DRYING DEFECT SCORES: SPECIMEN TESTING X ANALYSIS OF KILN-DRIED BOARDS

Directory of Open Access Journals (Sweden)

Djeison Cesar Batista

2015-04-01

Full Text Available It is important to develop drying technologies for Eucalyptus grandis lumber, which is one of the most planted species of this genus in Brazil and plays an important role as raw material for the wood industry. The general aim of this work was to assess the conventional kiln drying of juvenile wood of three clones of Eucalyptus grandis. The specific aims were to compare the behavior between: i drying defects indicated by tests with wood specimens and conventional kiln-dried boards; and ii physical properties and the drying quality. Five 11-year-old trees of each clone were felled, and only flatsawn boards of the first log were used. Basic density and total shrinkage were determined, and the drying test with wood specimens at 100 °C was carried out. Kiln drying of boards was performed, and initial and final moisture content, moisture gradient in thickness, drying stresses and drying defects were assessed. The defect scoring method was used to verify the behavior between the defects detected by specimen testing and the defects detected in kiln-dried boards. As main results, the drying schedule was too severe for the wood, resulting in a high level of boards with defects. The behavior between the defects in the drying test with specimens and the defects of kiln-dried boards was different, there was no correspondence, according to the defect scoring method.

Automatically high accurate and efficient photomask defects management solution for advanced lithography manufacture

Science.gov (United States)

Zhu, Jun; Chen, Lijun; Ma, Lantao; Li, Dejian; Jiang, Wei; Pan, Lihong; Shen, Huiting; Jia, Hongmin; Hsiang, Chingyun; Cheng, Guojie; Ling, Li; Chen, Shijie; Wang, Jun; Liao, Wenkui; Zhang, Gary

2014-04-01

Defect review is a time consuming job. Human error makes result inconsistent. The defects located on don't care area would not hurt the yield and no need to review them such as defects on dark area. However, critical area defects can impact yield dramatically and need more attention to review them such as defects on clear area. With decrease in integrated circuit dimensions, mask defects are always thousands detected during inspection even more. Traditional manual or simple classification approaches are unable to meet efficient and accuracy requirement. This paper focuses on automatic defect management and classification solution using image output of Lasertec inspection equipment and Anchor pattern centric image process technology. The number of mask defect found during an inspection is always in the range of thousands or even more. This system can handle large number defects with quick and accurate defect classification result. Our experiment includes Die to Die and Single Die modes. The classification accuracy can reach 87.4% and 93.3%. No critical or printable defects are missing in our test cases. The missing classification defects are 0.25% and 0.24% in Die to Die mode and Single Die mode. This kind of missing rate is encouraging and acceptable to apply on production line. The result can be output and reloaded back to inspection machine to have further review. This step helps users to validate some unsure defects with clear and magnification images when captured images can't provide enough information to make judgment. This system effectively reduces expensive inline defect review time. As a fully inline automated defect management solution, the system could be compatible with current inspection approach and integrated with optical simulation even scoring function and guide wafer level defect inspection.