WorldWideScience

Sample records for high dam gates

  1. Methodology for Risk Analysis of Dam Gates and Associated Operating Equipment Using Fault Tree Analysis

    National Research Council Canada - National Science Library

    Patev, Robert C; Putcha, Chandra; Foltz, Stuart D

    2005-01-01

    .... This report summarizes research on methodologies to assist in quantifying risks related to dam gates and associated operating equipment, and how those risks relate to overall spillway failure risk...

  2. Environmental management through sluice gated bed-dam: a revived strategy for the control of Anopheles fluviatilis breeding in streams

    Science.gov (United States)

    Sahu, S.S.; Gunasekaran, K.; Jambulingam, P.

    2014-01-01

    Background & objectives: Integrated vector management (IVM) emphasizes sustainable eco-friendly methods and minimal use of chemicals. In this context, the present study highlights the environmental control of breeding of Anopheles fluviatilis, the primary malaria vector, through water management in a natural stream in Koraput district, Odisha, India. Methods: The District Rural Development Agency (DRDA), Koraput, constructed two bed-dams across streams, one in Barigaon and the other in Pipalapodar village. The bed-dam in the former village was fitted with two sluice gates whereas the bed dam constructed in the latter village was without the sluice gate. The sluice gates were opened once in a week on a fixed day to flush out the water from the dam. Anopheles immatures were sampled systematically in the streams using a dipper for density measurement and species composition. Results: There was a reduction of 84.9 per cent in the proportion of positive dips for Anopheles larvae/pupae and a reduction of 98.4 per cent in immature density (number/dip) of An. fluviatilis in the experimental downstream compared to the control following opening of the sluice gates. Interpretation & conclusions: Our findins showed that opening of sluice gates of the bed-dam regularly once in a week resulted in the control of vector breeding in the downstream due to the flushing effect of the water released with a high flow from the bed-dam that stagnated water in the upstream. The outcome of the study encourages upscaling this measure to other areas, wherever feasible. PMID:25297364

  3. Research on Safety Factor of Dam Slope of High Embankment Dam under Seismic Condition

    Directory of Open Access Journals (Sweden)

    Li Bin

    2015-01-01

    Full Text Available With the constant development of construction technology of embankment dam, the constructed embankment dam becomes higher and higher, and the embankment dam with its height over 200m will always adopt the current design criteria of embankment dam only suitable for the construction of embankment dam lower than 200m in height. So the design criteria of high embankment dam shall be improved. We shall calculate the stability and safety factors of dam slope of high embankment dam under different dam height, slope ratio and different seismic intensity based on ratio of safety margin, and clarify the change rules of stability and safety factors of dam slope of high embankment dam with its height over 200m. We calculate the ratio of safety margin of traditional and reliable method by taking the stable, allowable and reliability index 4.2 of dam slope of high embankment dam with its height over 200m as the standard value, and conduct linear regression for both. As a result, the conditions, where 1.3 is considered as the stability and safety factors of dam slope of high embankment dam with its height over 200m under seismic condition and 4.2 as the allowable and reliability index, are under the same risk control level.

  4. Dams

    Data.gov (United States)

    Vermont Center for Geographic Information — This dataset �is generated from from the Vermont Dam Inventory (VDI). The VDI is managed by the VT DEC's Dam Safety and Hydrology Section and contains information...

  5. Earthquake Hazard for Aswan High Dam Area

    Science.gov (United States)

    Ismail, Awad

    2016-04-01

    Earthquake activity and seismic hazard analysis are important components of the seismic aspects for very essential structures such as major dams. The Aswan High Dam (AHD) created the second man-made reservoir in the world (Lake Nasser) and is constructed near urban areas pose a high-risk potential for downstream life and property. The Dam area is one of the seismically active regions in Egypt and is occupied with several cross faults, which are dominant in the east-west and north-south. Epicenters were found to cluster around active faults in the northern part of Lake and AHD location. The space-time distribution and the relation of the seismicity with the lake water level fluctuations were studied. The Aswan seismicity separates into shallow and deep seismic zones, between 0 and 14 and 14 and 30 km, respectively. These two seismic zones behave differently over time, as indicated by the seismicity rate, lateral extent, b-value, and spatial clustering. It is characterized by earthquake swarm sequences showing activation of the clustering-events over time and space. The effect of the North African drought (1982 to present) is clearly seen in the reservoir water level. As it decreased and left the most active fault segments uncovered, the shallow activity was found to be more sensitive to rapid discharging than to the filling. This study indicates that geology, topography, lineations in seismicity, offsets in the faults, changes in fault trends and focal mechanisms are closely related. No relation was found between earthquake activity and both-ground water table fluctuations and water temperatures measured in wells located around the Kalabsha area. The peak ground acceleration is estimated in the dam site based on strong ground motion simulation. This seismic hazard analyses have indicated that AHD is stable with the present seismicity. The earthquake epicenters have recently took place approximately 5 km west of the AHD structure. This suggests that AHD dam must be

  6. Dams designed to fail

    Energy Technology Data Exchange (ETDEWEB)

    Penman, A. [Geotechnical Engineering Consultants, Harpenden (United Kingdom)

    2004-09-01

    New developments in geotechnical engineering have led to methods for designing and constructing safe embankment dams. Failed dams can be categorized as those designed to fail, and those that have failed unexpectedly. This presentation outlined 3 dam failures: the 61 m high Malpasset Dam in France in 1959 which killed 421; the 71 m high Baldwin Hills Dam in the United States in 1963 which killed 5; and, the Vajont Dam in Italy in 1963 which killed 2,600 people. Following these incidents, the International Commission for Large Dams (ICOLD) reviewed regulations on reservoir safety. The 3 dams were found to have inadequate spillways and their failures were due to faults in their design. Fuse plug spillways, which address this problem, are designed to fail if an existing spillway proves inadequate. They allow additional discharge to prevent overtopping of the embankment dam. This solution can only be used if there is an adjacent valley to take the additional discharge. Examples of fuse gates were presented along with their effect on dam safety. A research program is currently underway in Norway in which high embankment dams are being studied for overtopping failure and failure due to internal erosion. Internal erosion has been the main reason why dams have failed unexpectedly. To prevent failures, designers suggested the use of a clay blanket placed under the upstream shoulder. However, for dams with soft clay cores, these underblankets could provide a route for a slip surface and that could lead to failure of the upstream shoulder. It was concluded that a safe arrangement for embankment dams includes the use of tipping gates or overturning gates which always fail at a required flood water level. Many have been installed in old and new dams around the world. 14 refs., 19 figs.

  7. High speed gated x-ray imagers

    International Nuclear Information System (INIS)

    Kilkenny, J.D.; Bell, P.; Hanks, R.; Power, G.; Turner, R.E.; Wiedwald, J.

    1988-01-01

    Single and multi-frame gated x-ray images with time-resolution as fast as 150 psec are described. These systems are based on the gating of microchannel plates in a stripline configuration. The gating voltage comes from the avalanche breakdown of reverse biased p-n junction producing high power voltage pulses as short as 70 psec. Results from single and four frame x-ray cameras used on Nova are described. 8 refs., 9 figs

  8. Dam! Dam! Dam!

    International Nuclear Information System (INIS)

    McCully, P.

    1997-01-01

    The author of ''Silenced Rivers'' a book questioning the desirability of dam building and hydroelectric power generation argues the main themes of his book in this paper. Despite being hailed by politicians as good solutions to power generation problems, and enthusiastically pursued in China, the U.S.A., the former Soviet Union, India and Japan, dams have far-reaching ecological and human consequences. The ecosystems lost to flooding, and the agricultural land use lost, the human cost in terms of homes and employment lost to reservoirs, disease from water-borne infections such as malaria, and the hazards of dams overflowing or breaking are all factors which are against the case for dam construction. The author argues the hydroelectric power may be renewable, but the social, agricultural and ecological costs are too high to justify it as a method of first choice. (UK)

  9. Engineers find climbing techniques work well for dam inspections

    Energy Technology Data Exchange (ETDEWEB)

    O`Shea, M.; Graves, A. [Bureau of Reclamation, Denver, CO (United States)

    1996-10-01

    Climbing techniques adopted by the Bureau of Reclamation to inspect previously inaccessible or difficult to reach features at dams are described. Following the failure of the steel radial-arm gate at Folsom Dam, engineers mounted an effort to reach and inspect the dam`s seven other spillway gates. This close-up examination was performed to: (1) determine the condition of these gates; and (2) gather clues about the failure of the one gate. The access techniques described involved mountaineering techniques, as opposed to high scaling techniques, performed with dynamic and static nylon kermantle ropes.

  10. Spruce Lake Dam reconstruction

    Energy Technology Data Exchange (ETDEWEB)

    Snyder, G. [SGE Acres Ltd., Fredericton, NB (Canada); Barnard, J. [SGE Acres Ltd., St. John' s, NF (Canada); Vriezen, C. [City of Saint John, NF (Canada); Stephenson, M. [Jacques Whitford Environment Ltd., Fredericton, NB (Canada)

    2004-09-01

    Spruce Lake Dam was constructed in 1898 as part of the water supply system for Saint John, New Brunswick. The original dam was a 6 meter high, 140 meter long concrete gravity dam with an intake structure at its mid point and an overflow spillway at the left abutment. A rehabilitation project was launched in 2001 to bring the deteriorated dam into conformance with the dam safety guidelines of the Canadian Dam Association. The project criteria included minimal disruption to normal operation of water supply facilities and no negative effect on water quality. The project involved installation of a new low level outlet, removal of a gate house and water intake pipes, replacement of an access road culvert in the spillway channel, and raising the earth dam section by 1.8 meters to allow for increased water storage. The new raised section has an impervious core. The project also involved site and geotechnical investigations as well as hydrotechnical and environmental studies. This presentation described the final design of the remedial work and the environmental permitting procedures. Raising the operating level of the system proved successful as demonstrated by the fewer number of pumping days required after dam rehabilitation. The dam safety assessment under the Canadian Environmental Assessment Act began in April 2001, and the rehabilitation was completed by the end of 2002. 1 tab., 8 figs.

  11. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    Science.gov (United States)

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  12. Study of discharge coefficients of the flapper gates in the Tiete River movable dam; Estudo dos coeficientes de vazao das comportas tipo basculante (CLAPET) da barragem movel do Rio Tiete

    Energy Technology Data Exchange (ETDEWEB)

    Lucca, Yvone de Faria Lemos de [Universidade de Sao Paulo (CTH/DAEE/USP), SP (Brazil). Departamento de Aguas e Energia Eletrica. Centro Tecnologico de Hidraulica e Recursos Hidricos; Souza, Podalyro Amaral de [Universidade de Sao Paulo (EP/USP), SP (Brazil). Escola Politecnica. Dept. de Aguas e Energia Eletrica], E-mail: podalyro@usp.br

    2011-04-15

    This article refers to the study of discharge coefficients of the flapper gates in the Tiete River Movable Dam. This dam is made of a reinforced concrete structure with nine flapper gates, which can be operated independently from each other, opening angle from zero to 70 degree. This type of dam structure produces complex flow conditions due to the several opening combinations which make this study very challenging. This paper presents the development of a mathematical model that can estimate the coefficient flow taking into account all major variables present in this dam structure, like the angle of operation of each gate, the approaching flow velocity, the concrete column between gates, the downed outflow effects and the presence of a completely closed gate between two in operation. (author)

  13. Uncertainty Instability Risk Analysis of High Concrete Arch Dam Abutments

    Directory of Open Access Journals (Sweden)

    Xin Cao

    2017-01-01

    Full Text Available The uncertainties associated with concrete arch dams rise with the increased height of dams. Given the uncertainties associated with influencing factors, the stability of high arch dam abutments as a fuzzy random event was studied. In addition, given the randomness and fuzziness of calculation parameters as well as the failure criterion, hazard point and hazard surface uncertainty instability risk ratio models were proposed for high arch dam abutments on the basis of credibility theory. The uncertainty instability failure criterion was derived through the analysis of the progressive instability failure process on the basis of Shannon’s entropy theory. The uncertainties associated with influencing factors were quantized by probability or possibility distribution assignments. Gaussian random theory was used to generate random realizations for influence factors with spatial variability. The uncertainty stability analysis method was proposed by combining the finite element analysis and the limit equilibrium method. The instability risk ratio was calculated using the Monte Carlo simulation method and fuzzy random postprocessing. Results corroborate that the modeling approach is sound and that the calculation method is feasible.

  14. High frequency MOSFET gate drivers technologies and applications

    CERN Document Server

    Zhang, Zhiliang

    2017-01-01

    This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.

  15. Massive accumulation of highly polluted sedimentary deposits by river damming

    Energy Technology Data Exchange (ETDEWEB)

    Palanques, Albert, E-mail: albertp@icm.csic.es [Institute of Marine Sciences (CSIC), Passeig Maritim de la Barceloneta, 37-49, Barcelona 08003 (Spain); Grimalt, Joan [Institute of Environmental Assessment and Water Research (CSIC), Jordi Girona, 18, Barcelona 08034 (Spain); Belzunces, Marc; Estrada, Ferran; Puig, Pere; Guillén, Jorge [Institute of Marine Sciences (CSIC), Passeig Maritim de la Barceloneta, 37-49, Barcelona 08003 (Spain)

    2014-11-01

    Uncontrolled dumping of anthropogenic waste in rivers regulated by dams has created contaminated deposits in reservoirs that have remained unidentified for decades. The Flix Reservoir is located in the Ebro River, the second largest river flowing into the NW Mediterranean, has been affected by residue dumping from a chlor-alkali electrochemical plant for decades. High-resolution seismic profiles, bathymetric data, surficial sediment samples and sediment cores were obtained in the Flix Reservoir to study the characteristics of the deposit accumulated by this dumping. These data were used to reconstruct the waste deposit history. Since the construction of the Flix Dam in 1948, more than 3.6 × 10{sup 5} t of industrial waste has accumulated in the reservoir generating a delta-like deposit formed by three sediment lobes of fine-grained material highly contaminated by Hg, Cd, Zn and Cr (max: 640, 26, 420 and 750 mg kg{sup −1}, respectively). This contamination was associated with the Hg that was used for the cathode in the electrochemical plant from 1949 and with the production of phosphorite derivatives from 1973. After the construction of two large dams only a few kilometres upstream during the 1960s, the solids discharged from the industrial complex became the main sediment source to the Flix Reservoir. The deposit has remained in the reservoir forming a delta that obstructs about 50% of the river water section. Its stability only depended on the flow retention by the Flix Dam. At present, this contaminated waste deposit is being removed from the water reservoir as it is a cause of concern for the environment and for human health downriver. - Highlights: • A delta-like anthropogenic deposit prograded into the reservoir behind the Flix dam. • More than 3.6 × 10{sup 5} t of anthropogenic waste was accumulated in less than 4 decades. • A waste deposit with extreme levels of Hg and Cd was trapped in the Flix Reservoir. • The main pollution was related to

  16. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa; Shamiryan, Denis G.; Paraschiv, Vasile; Sano, Kenichi; Reinhardt, Karen A.

    2010-01-01

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  17. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-12-20

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  18. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  19. Optimization design of foundation excavation for Xiluodu super-high arch dam in China

    Directory of Open Access Journals (Sweden)

    Qixiang Fan

    2015-04-01

    Full Text Available With better understanding of the quality and physico-mechanical properties of rocks of dam foundation, and the physico-mechanical properties and structure design of arch dam in association with the foundation excavation of Xiluodu arch dam, the excavation optimization design was proposed for the foundation surface on the basis of feasibility study. Common analysis and numerical analysis results demonstrated the feasibility of using the weakly weathered rocks III1 and III2 as the foundation surface of super-high arch dam. In view of changes in the geological conditions at the dam foundation along the riverbed direction, the design of extending foundation surface excavation area and using consolidating grouting and optimizing structure of dam bottom was introduced, allowing for harmonization of the arch dam and foundation. Three-dimensional (3D geomechanics model test and finite element analysis results indicated that the dam body and foundation have good overload stability and high bearing capacity. The monitoring data showed that the behaviors of dam and foundation correspond with the designed patterns in the construction period and the initial operation period.

  20. Gate Drive For High Speed, High Power IGBTs

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; /SLAC

    2007-06-18

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

  1. Gate Drive For High Speed, High Power IGBTs

    International Nuclear Information System (INIS)

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; SLAC

    2007-01-01

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3(micro)S with a rate of current rise of more than 10000A/(micro)S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt

  2. Study on real working performance and overload safety factor of high arch dam

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Considering the fact that high arch dams have problems such as complicated stress,high cost,and hazards after being damaged,this paper intends to study the effects of load,material strength,and safety analysis method on dam safety and working performance of arch dams.In this article,the effects of temperature,self weight exaction way and water loading on structure response are first discussed,and a more reasonable way of considering is then put forward.By taking into consideration the mechanical property of materials and comparing the effects of different yield criteria on overloading safety of high arch dams,this paper concludes that brittle characteristics of concrete should be fully considered when conducting safety assessment for high arch dams to avoid overestimating the bearing capacity of the dams.By comparing several typical projects,this paper works out a safety assessment system of multiple safety and relevant engineering analogical analysis methods,which is closer to the actual situation,and thus is able to assess the response of high arch dam structure in a more comprehensive way,elicit the safety coefficients in different situations,and provide a new way of considering the safety assessment of high arch dams.

  3. Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

    International Nuclear Information System (INIS)

    Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

    2013-01-01

    In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

  4. Remote Sensing of Deformation of a High Concrete-Faced Rockfill Dam Using InSAR: A Study of the Shuibuya Dam, China

    Directory of Open Access Journals (Sweden)

    Wei Zhou

    2016-03-01

    Full Text Available Settlement is one of the most important deformation characteristics of high concrete faced rockfill dams (CFRDs, >100 m. High CFRDs safety would pose a great threat to the security of people’s lives and property downstream if this kind of deformation were not to be measured correctly, as traditional monitoring approaches have limitations in terms of durability, coverage, and efficiency. It has become urgent to develop new monitoring techniques to complement or replace traditional monitoring approaches for monitoring the safety and operation status of high CFRDs. This study examines the Shuibuya Dam (up to 233.5 m in height in China, which is currently the highest CFRD in the world. We used space-borne Interferometric Synthetic Aperture Radar (InSAR time series to monitor the surface deformation of the Shuibuya Dam. Twenty-one ALOS PALSAR images that span the period from 28 February 2007 to 11 March 2011 were used to map the spatial and temporal deformation of the dam. A high correlation of 0.93 between the InSAR and the in-situ monitoring results confirmed the reliability of the InSAR method; the deformation history derived from InSAR is also consistent with the in-situ settlement monitoring system. In addition, the InSAR results allow continuous investigation of dam deformation over a wide area that includes the entire dam surface as well as the surrounding area, offering a clear picture continuously of the dam deformation.

  5. Walden North Dam overtopping : emergency response and rehabilitation

    Energy Technology Data Exchange (ETDEWEB)

    Dyer, S. [FortisBC Inc., South Slocan, BC (Canada); McCreanor, J. [Acres International Ltd., Calgary, AB (Canada); Cronin, D.L.R.; Daw, D. [Acres International Ltd., Vancouver, BC (Canada)

    2004-09-01

    This paper described the events that led to the overtopping of the Walden North Dam during a heavy rainfall in June 2002, resulting in a breach around an abutment wall. The dam is part of a run-of-river hydro development on Cayoosh Creek near Lillooet, British Columbia. The Walden North Dam was a low, 46 meter wide concrete dam with a single radial gate. The dam overtopping was attributed to failure of the radial gate hoist. Prior to this event, the dam had been classified by the British Columbia Dam Safety Authorities as a high and then a low consequence category of failure. As facility managers, Aquila Networks Canada Ltd. established an immediate action plan to stabilize the situation and resume normal power production by applying the following priorities: (1) ensure safety of workers and the public, (2) limit further damage to the dam and other facilities, (3) ensure environmental protection, and (4) continue to operate the generation units. Local authorities were informed to evacuate a downstream campsite and environmental agencies were contacted along with safety regulators. Repairs included demolition of the damaged portion of the structure and construction a new two-bay gate/stoplog spillway and bridge. Construction was completed by September 2003 according to the requirements of the Department of Fisheries and Oceans for minimum flow, accurate control of fish flows and environmental monitoring of the stream area. 10 figs.

  6. A high performance gate drive for large gate turn off thyristors

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, C.P.

    1993-01-01

    Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

  7. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  8. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

    2010-01-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  9. Inventory of gate-sensing equipment at 14 U.S. Army Corps of Engineers dams in Texas

    Science.gov (United States)

    Harwell, Glenn R.

    2005-01-01

    The U.S. Army Corps of Engineers (USACE) is a worldwide organization that provides engineering services, environmental restoration, and construction support for a wide variety of civil and military projects. The primary civil mission of the USACE is developing and managing the Nation's water resources. USACE develops projects to reduce flood damage, improve navigation channels and harbors, protect wetlands, and preserve, safeguard, and enhance the environment. Additional missions of the Corps include managing federal real estate, assisting communities with emergency operations and recovery, and providing recreation opportunities.Accurate and timely information on reservoir gate openings is critical for managing flood pools, reducing flood damage downstream from reservoirs, delivering drinking-water supplies, and meeting an assortment of competing downstream water-use needs. Documentation, operation, and maintenance of gate sensors are needed so that reliable, timely information is available to USACE to make reservoir operation decisions.USACE requested that the U.S. Geological Survey (USGS) prepare an inventory and documentation of existing gate-sensing equipment at 14 reservoirs that will serve as a user’s manual for operating the equipment. The 14 reservoirs include Aquilla Lake, Bardwell Lake, Benbrook Lake, Canyon Lake, Georgetown Lake, Granger Lake, Grapevine Lake, Jim Chapman Lake, Joe Pool Lake, Lake O’ the Pines, Ray Roberts Lake, Somerville Lake, Stillhouse Hollow Lake, and Wright Patman Lake.This report presents the inventory and documentation of the existing gate-sensing equipment at the 14. The report is organized by lake; information in each lake section includes location of lake and intake structure, directions to each lake (road log), access, equipment description, operation and maintenance information, job hazard analysis, wiring diagrams, photographs, and datalogger programs. The report also includes a list of contact information for the

  10. Hydrological impact of high-density small dams in a humid catchment, Southeast China

    Science.gov (United States)

    Lu, W.; Lei, H.; Yang, D.

    2017-12-01

    The Jiulong River basin is a humid catchment with a drainage area of 14,741 km2; however, it has over 1000 hydropower stations within it. Such catchment with high-density small dams is scarce in China. Yet few is known about the impact of high-density small dams on streamflow changes. To what extent the large number of dams alters the hydrologic patterns is a fundamental scientific issue for water resources management, flood control, and aquatic ecological environment protection. Firstly, trend and change point analyses are applied to determine the characteristics of inter-annual streamflow. Based on the detected change point, the study period is divided into two study periods, the ``natural'' and ``disturbed'' periods. Then, a geomorphology-based hydrological model (GBHM) and the fixing-changing method are adopted to evaluate the relative contributions of climate variations and damming to the changes in streamflow at each temporal scale (i.e., from daily, monthly to annual). Based on the simulated natural streamflow, the impact of dam construction on hydrologic alteration and aquatic ecological environment will be evaluated. The hydrologic signatures that will be investigated include flood peak, seasonality of streamflow, and the inter-annual variability of streamflow. In particular, the impacts of damming on aquatic ecological environment will be investigated using eco-flow metrics and indicators of hydrologic alteration (IHA) which contains 33 individual streamflow statistics that are closely related to aquatic ecosystem. The results of this study expect to provide a reference for reservoir operation considering both ecological and economic benefits of such operations in the catchment with high-density dams.

  11. Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETs

    International Nuclear Information System (INIS)

    Jang, Junyong; Lim, Towoo; Kim, Youngmin

    2009-01-01

    We explore a source/drain (S/D) design for a 16 nm MOSFET utilizing a replacement process for a high-k gate dielectric and metal gate electrode integration. Using TCAD simulation, a trade-off study between series resistance and overlap capacitance is carried out for a high-k dielectric surrounding gate structure, which results from the replacement process. An optimum S/D overlap to gate for the high-k surrounding gate structure is found to be different from the conventional gate structure, i.e. 0∼1 nm underlap is preferred for the surround high-k gate structure while 1∼2 nm overlap for the conventional gate one

  12. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2000-01-01

    Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

  13. Distribution of 137Cs and 226Ra in the sediments of Aswan High Dam lake

    International Nuclear Information System (INIS)

    Ismail, S.S.; Unfried, E.; Grass, F.

    1994-01-01

    Sediment samples of the High Dam lake were investigated for their 137 Cs, 226 Ra, 228 Th, and 40 K content, using low-level γ-spectroscopy. The results show that at the beginning of the lake (500 km from the High Dam), where sediments consist mostly of sand, the level of 137 Cs is very low (0.1 Bq*kg -1 ). The maximum value (22.3 Bq*kg -1 ) was found 40 km from the wall of the High Dam, where the composition of the sediments is nearly 50% clays. The distribution of the natural nuclides 226 Ra, 228 Th and 40 K shows a different trend. (author) 9 refs.; 9 figs.; 1 tab

  14. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    International Nuclear Information System (INIS)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

    2014-01-01

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process

  15. Implications of recent levelling observations for Tehri and other high dams in the Himalaya

    International Nuclear Information System (INIS)

    Chander, R.; Gahalaut, V.K.

    1995-01-01

    Seismic hazards around the Tehri and other existing and proposed high dams in the Himalaya are a matter of concern to many people. The magnitude and dimensions of the problem appear to increase with every new set of geophysical and geological data gathered from the Himalaya. But the flexibility and readiness of the people involved to improve their designs for the dams transparently in the light of the evolving perceptions about seismic hazards is not evident to us at least. In this article the evidence for an aspect of seismic hazards in the Himalaya is buttressed. (author). 44 refs., 3 figs

  16. Deformation Monitoring of Geomechanical Model Test and Its Application in Overall Stability Analysis of a High Arch Dam

    Directory of Open Access Journals (Sweden)

    Baoquan Yang

    2015-01-01

    Full Text Available Geomechanical model testing is an important method for studying the overall stability of high arch dams. The main task of a geomechanical model test is deformation monitoring. Currently, many types of deformation instruments are used for deformation monitoring of dam models, which provide valuable information on the deformation characteristics of the prototype dams. However, further investigation is required for assessing the overall stability of high arch dams through analyzing deformation monitoring data. First, a relationship for assessing the stability of dams is established based on the comprehensive model test method. Second, a stability evaluation system is presented based on the deformation monitoring data, together with the relationships between the deformation and overloading coefficient. Finally, the comprehensive model test method is applied to study the overall stability of the Jinping-I high arch dam. A three-dimensional destructive test of the geomechanical model dam is conducted under reinforced foundation conditions. The deformation characteristics and failure mechanisms of the dam abutments and foundation were investigated. The test results indicate that the stability safety factors of the dam abutments and foundation range from 5.2 to 6.0. These research results provide an important scientific insight into the design, construction, and operation stages of this project.

  17. High-fidelity gates in quantum dot spin qubits.

    Science.gov (United States)

    Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

    2013-12-03

    Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

  18. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

    International Nuclear Information System (INIS)

    Cui Lei; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Jiang Li-Juan; Feng Chun; Yin Hai-Bo; Gong Jia-Min; Li Bai-Quan; Wang Zhan-Guo

    2015-01-01

    A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (L_e_f_f) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate. (paper)

  19. Gate controlled high efficiency ballistic energy conversion system

    NARCIS (Netherlands)

    Xie, Yanbo; Bos, Diederik; de Boer, Hans L.; van den Berg, Albert; Eijkel, Jan C.T.; Zengerle, R.

    2013-01-01

    Last year we demonstrated the microjet ballistic energy conversion system[1]. Here we show that the efficiency of such a system can be further improved by gate control. With gate control the electrical current generation is enhanced a hundred times with respect to the current generated from the zeta

  20. Restless Tuneup of High-Fidelity Qubit Gates

    Science.gov (United States)

    Rol, M. A.; Bultink, C. C.; O'Brien, T. E.; de Jong, S. R.; Theis, L. S.; Fu, X.; Luthi, F.; Vermeulen, R. F. L.; de Sterke, J. C.; Bruno, A.; Deurloo, D.; Schouten, R. N.; Wilhelm, F. K.; DiCarlo, L.

    2017-04-01

    We present a tuneup protocol for qubit gates with tenfold speedup over traditional methods reliant on qubit initialization by energy relaxation. This speedup is achieved by constructing a cost function for Nelder-Mead optimization from real-time correlation of nondemolition measurements interleaving gate operations without pause. Applying the protocol on a transmon qubit achieves 0.999 average Clifford fidelity in one minute, as independently verified using randomized benchmarking and gate-set tomography. The adjustable sensitivity of the cost function allows the detection of fractional changes in the gate error with a nearly constant signal-to-noise ratio. The restless concept demonstrated can be readily extended to the tuneup of two-qubit gates and measurement operations.

  1. A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability.

    Science.gov (United States)

    Kim, Hyungjin; Kim, Sihyun; Kim, Hyun-Min; Lee, Kitae; Kim, Sangwan; Pak, Byung-Gook

    2018-09-01

    In this study, we investigate a one-transistor (1T) dynamic random access memory (DRAM) cell based on a gated-thyristor device utilizing voltage-driven bistability to enable high-speed operations. The structural feature of the surrounding gate using a sidewall provides high scalability with regard to constructing an array architecture of the proposed devices. In addition, the operation mechanism, I-V characteristics, DRAM operations, and bias dependence are analyzed using a commercial device simulator. Unlike conventional 1T DRAM cells utilizing the floating body effect, excess carriers which are required to be stored to make two different states are not generated but injected from the n+ cathode region, giving the device high-speed operation capabilities. The findings here indicate that the proposed DRAM cell offers distinct advantages in terms of scalability and high-speed operations.

  2. High-Sensitivity, Highly Transparent, Gel-Gated MoS2 Phototransistor on Biodegradable Nanopaper

    KAUST Repository

    Zhang, Qing

    2016-06-21

    Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as the gate dielectric and semiconductive channel for high-perfomance field effect transistors. Here we report on the first MoS2 phototransistor built on flexible, transparent and biodegradable substrate with electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited excellent photo responsivity of ~1.5 kA/W, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly, biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility.

  3. High-Sensitivity, Highly Transparent, Gel-Gated MoS2 Phototransistor on Biodegradable Nanopaper

    KAUST Repository

    Zhang, Qing; Bao, Wenzhong; Gong, Amy; Gong, Tao; Ma, Dakang; Wan, Jiayu; Dai, Jiaqi; Munday, J; He, Jr-Hau; Hu, Liangbing; Zhang, Daihua

    2016-01-01

    Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as the gate dielectric and semiconductive channel for high-perfomance field effect transistors. Here we report on the first MoS2 phototransistor built on flexible, transparent and biodegradable substrate with electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited excellent photo responsivity of ~1.5 kA/W, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly, biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility.

  4. Gated viewing and high-accuracy three-dimensional laser radar

    DEFF Research Database (Denmark)

    Busck, Jens; Heiselberg, Henning

    2004-01-01

    , a high PRF of 32 kHz, and a high-speed camera with gate times down to 200 ps and delay steps down to 100 ps. The electronics and the software also allow for gated viewing with automatic gain control versus range, whereby foreground backscatter can be suppressed. We describe our technique for the rapid...

  5. High peak power tubes and gate effect Klystrons

    International Nuclear Information System (INIS)

    Gerbelot, N.; Bres, M.; Faillon, G.; Buzzi, J.M.

    1993-01-01

    The conventional microwave tubes such as TWTs, Magnetrons, Klystrons... deliver the very high peak powers which are required by radar transmitters but more especially by many particle accelerators. In the range of a few hundred MHz to about 10 GHz, some dozen of MWs per unit are currently obtained and commercially available, according to the frequency and the pulse lengths. But peak power requirements are ever increasing, especially for the expected new linear particle acceleratores, where several hundred MWs per tube would be necessary. Also some special military transmitters begin to request GW pulses, with short pulse lengths - of course - but at nonnegligible repetition rates. Therefore several laboratories and microwave vacuum tube manufacturers have engaged - for several years - studies and development in the field of very high peak microwave power (HPM) toward two main directions: extended operation and extrapolation of the conventional tubes and devices; development of new concepts, among which the most promising are likely the high-current relativistic klystrons - that are also referred to as gate effect klystrons

  6. Examining global electricity supply vulnerability to climate change using a high-fidelity hydropower dam model.

    Science.gov (United States)

    Turner, Sean W D; Ng, Jia Yi; Galelli, Stefano

    2017-07-15

    An important and plausible impact of a changing global climate is altered power generation from hydroelectric dams. Here we project 21st century global hydropower production by forcing a coupled, global hydrological and dam model with three General Circulation Model (GCM) projections run under two emissions scenarios. Dams are simulated using a detailed model that accounts for plant specifications, storage dynamics, reservoir bathymetry and realistic, optimized operations. We show that the inclusion of these features can have a non-trivial effect on the simulated response of hydropower production to changes in climate. Simulation results highlight substantial uncertainty in the direction of change in globally aggregated hydropower production (~-5 to +5% change in mean global production by the 2080s under a high emissions scenario, depending on GCM). Several clearly impacted hotspots are identified, the most prominent of which encompasses the Mediterranean countries in southern Europe, northern Africa and the Middle East. In this region, hydropower production is projected to be reduced by approximately 40% on average by the end of the century under a high emissions scenario. After accounting for each country's dependence on hydropower for meeting its current electricity demands, the Balkans countries emerge as the most vulnerable (~5-20% loss in total national electricity generation depending on country). On the flipside, a handful of countries in Scandinavia and central Asia are projected to reap a significant increase in total electrical production (~5-15%) without investing in new power generation facilities. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

    Science.gov (United States)

    Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

    2018-06-01

    The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

  8. Design of High Quality Chemical XOR Gates with Noise Reduction.

    Science.gov (United States)

    Wood, Mackenna L; Domanskyi, Sergii; Privman, Vladimir

    2017-07-05

    We describe a chemical XOR gate design that realizes gate-response function with filtering properties. Such gate-response function is flat (has small gradients) at and in the vicinity of all the four binary-input logic points, resulting in analog noise suppression. The gate functioning involves cross-reaction of the inputs represented by pairs of chemicals to produce a practically zero output when both are present and nearly equal. This cross-reaction processing step is also designed to result in filtering at low output intensities by canceling out the inputs if one of the latter has low intensity compared with the other. The remaining inputs, which were not reacted away, are processed to produce the output XOR signal by chemical steps that result in filtering at large output signal intensities. We analyze the tradeoff resulting from filtering, which involves loss of signal intensity. We also discuss practical aspects of realizations of such XOR gates. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. A simplified physically-based breach model for a high concrete-faced rockfill dam: A case study

    OpenAIRE

    Qi-ming Zhong; Sheng-shui Chen; Zhao Deng

    2018-01-01

    A simplified physically-based model was developed to simulate the breaching process of the Gouhou concrete-faced rockfill dam (CFRD), which is the only breach case of a high CFRD in the world. Considering the dam height, a hydraulic method was chosen to simulate the initial scour position on the downstream slope, with the steepening of the downstream slope taken into account; a headcut erosion formula was adopted to simulate the backward erosion as well. The moment equilibrium method was util...

  10. High risk behaviour near OPG dams and power stations : results from two surveys

    Energy Technology Data Exchange (ETDEWEB)

    Giesbrecht, N.; Schmidt, R.; Ialomiteanu, A. [Centre for Addiction and Mental Health, Toronto, ON (Canada)

    2009-07-01

    High risk behaviour near dams is not uncommon. This presentation discussed the results from 2 surveys on high risk behaviour near dams and power stations operated by Ontario Power Generation (OPG). The main components of the project were presented, with particular reference to analyses of recent literature on high-risk behaviour; interviews with OPG managers and staff in 4 regions; main survey of respondents from 4 regions; follow-up interviews with high-risk respondents; interviews with community members and contacts from recreational associations; and recommendations. Specific questions and results were provided from each survey. From the first survey, the characteristics of respondents that used OPG sites for recreation were identified. One hundred high risk respondents completed a follow-up interview. The survey showed that although high-risk behaviour is not uncommon, the main reason people use the facilities are for recreation and relaxation, and not for thrill seeking purposes. Recommendations stemming from the surveys included the need for definition of boundaries and delivery of messages via children, recreational associations, and law enforcement personnel. tabs., figs.

  11. Fast and high-fidelity entangling gate through parametrically modulated longitudinal coupling

    Directory of Open Access Journals (Sweden)

    Baptiste Royer

    2017-05-01

    Full Text Available We investigate an approach to universal quantum computation based on the modulation of longitudinal qubit-oscillator coupling. We show how to realize a controlled-phase gate by simultaneously modulating the longitudinal coupling of two qubits to a common oscillator mode. In contrast to the more familiar transversal qubit-oscillator coupling, the magnitude of the effective qubit-qubit interaction does not rely on a small perturbative parameter. As a result, this effective interaction strength can be made large, leading to short gate times and high gate fidelities. We moreover show how the gate infidelity can be exponentially suppressed with squeezing and how the entangling gate can be generalized to qubits coupled to separate oscillators. Our proposal can be realized in multiple physical platforms for quantum computing, including superconducting and spin qubits.

  12. Trace elements in sediment samples of the Aswan High Dam Lake

    International Nuclear Information System (INIS)

    Sherief, M.K.; Awadallah, R.M.; Grass, F.

    1981-01-01

    Main and trace elements in Nile sediments of the Aswan High Dam Lake were investigated by means of Instrumental Activation Analysis. It was shown that the composition of the Nile sediments changes in accordance with the large gradients in flow rate and with elution and absorption processes. Particles containing Ca, Ba, Hf, Ti, V, and Na are sedimented preferentially near the headwater of Lake Nubia, whereas some elements are rather uniformly distributed, e.g. Fe, Co, Sm, and Eu, and some, such as Al, Sc, Cs, Th, La, and Ce, show a distinct increase downstream. Some elements do not fit into any of these three groups. (author)

  13. Restless Tuneup of High-Fidelity Qubit Gates

    NARCIS (Netherlands)

    Rol, M.A.; Bultink, C.C.; O'Brien, T.E.; Jong, S.R. de; Theis, L.S.; Fu, X.; Luthi, F.; Vermeulen, R.F.L.; Sterke, J.C. de; Bruno, A.; Deurloo, D.; Schouten, R.N.; Wilhelm, F.K.; Dicarlo, L.

    2017-01-01

    We present a tuneup protocol for qubit gates with tenfold speedup over traditional methods reliant on qubit initialization by energy relaxation. This speedup is achieved by constructing a cost function for Nelder-Mead optimization from real-time correlation of nondemolition measurements interleaving

  14. Restless Tuneup of High-Fidelity Qubit Gates

    NARCIS (Netherlands)

    Rol, M.A.; Bultink, C.C.; O'Brien, T.E.; De Jong, S. R.; Theis, L. S.; Fu, X.; Lüthi, F.; Vermeulen, R.F.L.; de Sterke, J.C.; Bruno, A.; Deurloo, D.; Schouten, R.N.; Wilhelm, FK; Di Carlo, L.

    2017-01-01

    We present a tuneup protocol for qubit gates with tenfold speedup over traditional methods reliant on qubit initialization by energy relaxation. This speedup is achieved by constructing a cost function for Nelder-Mead optimization from real-time correlation of nondemolition measurements

  15. Compensated readout for high-density MOS-gated memristor crossbar array

    KAUST Repository

    Zidan, Mohammed A.

    2015-01-01

    Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

  16. High volume fly ash RCC for dams - I : mixture optimization and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jacobsen, S. [PEAB Construction Co., Oslo (Norway); Lahus, O. [Norwegian Building Research Inst., Oslo (Norway)

    2001-07-01

    Roller compacted concretes (RCC) were developed for the Norwegian Skjerka hydropower project. RCCs were developed to have a high-volume fly ash content to address environmental issues, including the reduction of carbon dioxide emissions associated with dam construction. They also makes good use of waste product and conserve natural resources. This study examined a series of mixtures to determine the appropriateness of using RCC as a competing alternative to the traditional rock fill dam proposed for the Skjerka hydropower project. The main advantage of RCC is speed, allowing a relatively large dam to be constructed in just one summer season, saving financial costs and providing early return on the investment. In addition, fly ash can be used in the structure, using clean and renewable energy. Several procedures to proportion RCC mixtures were proposed, including the optimal paste volume method which is based on the assumption that an optimal RCC should have just enough paste to fill the space between particles when the granular skeleton has reached its maximum density under compaction. With this assumption, RCC tests began in 1998 in the laboratories of the Norwegian Building Research Institute. An ordinary portland cement was used and combined with ordinary low lime fly ash. Both coarse and fine aggregate were used. The tests determined the optimum paste-mortar ratio, the content of coarse aggregates and the production of specimens for test on hardened and fresh concrete. The study showed that the compressive strength of RCC increased with increasing cement/(cement + fly ash) ratio. The permeability coefficient decreased with increasing cement-content and increasing cement/(cement + fly ash) ratio due to the slow pozzolanic reaction of fly ash making a more open pore structure. It was concluded that an optimized mixture can result in a high performance RCC in terms of fresh and hardened concrete properties. 15 refs., 5 tabs., 11 figs.

  17. Fish Passage Through Dams on the Upper Mississippi River

    National Research Council Canada - National Science Library

    Wilcox, Daniel

    1999-01-01

    .... I identified UMR migratory fish species, estimated current velocities through gate openings on UMR dams, compiled information on migration behavior, and estimated the swimming for north performance...

  18. High image quality sub 100 picosecond gated framing camera development

    International Nuclear Information System (INIS)

    Price, R.H.; Wiedwald, J.D.

    1983-01-01

    A major challenge for laser fusion is the study of the symmetry and hydrodynamic stability of imploding fuel capsules. Framed x-radiographs of 10-100 ps duration, excellent image quality, minimum geometrical distortion (< 1%), dynamic range greater than 1000, and more than 200 x 200 pixels are required for this application. Recent progress on a gated proximity focused intensifier which meets these requirements is presented

  19. Sub-50 nm gate length SOI transistor development for high performance microprocessors

    International Nuclear Information System (INIS)

    Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

    2004-01-01

    Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

  20. Finite Element Analysis of Dam-Reservoir Interaction Using High-Order Doubly Asymptotic Open Boundary

    Directory of Open Access Journals (Sweden)

    Yichao Gao

    2011-01-01

    Full Text Available The dam-reservoir system is divided into the near field modeled by the finite element method, and the far field modeled by the excellent high-order doubly asymptotic open boundary (DAOB. Direct and partitioned coupled methods are developed for the analysis of dam-reservoir system. In the direct coupled method, a symmetric monolithic governing equation is formulated by incorporating the DAOB with the finite element equation and solved using the standard time-integration methods. In contrast, the near-field finite element equation and the far-field DAOB condition are separately solved in the partitioned coupled methodm, and coupling is achieved by applying the interaction force on the truncated boundary. To improve its numerical stability and accuracy, an iteration strategy is employed to obtain the solution of each step. Both coupled methods are implemented on the open-source finite element code OpenSees. Numerical examples are employed to demonstrate the performance of these two proposed methods.

  1. Ririe Dam Release Test Assessment

    Science.gov (United States)

    2013-06-01

    Notes HEC - RAS Location Station (ft) Observation Notes 1420 Ririe Dam Ririe Dam 119,880 Gates opened and initial release started. 1455 115th St...16°F air temperature. Table A2. Observations made on 11 February 2013. Time Location Notes HEC - RAS Location Station (ft) Observation Notes...ERDC/CRREL TR-13-10 52 Time Location Notes HEC - RAS Location Station (ft) Observation Notes Travel Time* (sec) Vel.** (fps) 1224 5th

  2. GIS inundation mapping and dam breach analysis of Woolwich Dam using HEC-geoRAS

    Energy Technology Data Exchange (ETDEWEB)

    Mocan, N. [Crozier and Associates Inc., Collingwood, ON (Canada); Joy, D.M. [Guelph Univ., ON (Canada); Rungis, G. [Grand River Conservation Authority, Cambridge, ON (Canada)

    2006-07-01

    A study was conducted to determine the extent of flood inundation given a hypothetical dam breach scenario of the Woolwich Dam located in the Grand River Watershed, 2.5 km north of the Town of Elmira, Ontario. The dam is operated by the Grand River Conservation Authority and was constructed to provide low-flow augmentation to Canagagigue Creek. Advances in the computational capabilities of numerical models along with the availability of fine resolution geospatial data has lead to significant advances in the evaluation of catastrophic consequences due to the ensuing flood waters when dams fail. The hydraulic models HEC-RAS and HEC-GeoRAS were used in this study along with GIS to produce high resolution spatial and temporal flood inundation mapping. Given the proximity to the Town of Elmira, the dam is classified as having a high hazard potential. The large size and high hazard potential of the dam suggests that the Inflow Design Flood (IDF) is the Probable Maximum Flood (PMF) event. The outlet structure of the spillway consists of 4 ogee-type concrete spillways equipped with radial gates. A low-level concrete pipe located within the spillway structure provides spillage for maintenance purposes. The full flow capacity of the spillway structure is 297 cubic metres per second at the full supply level of 364.8 metres. In addition to GIS flood inundation maps, this paper included the results of flood hydrographs, water surface profiles and peak flow data. It was concluded that techniques used in this analysis should be considered for use in the development of emergency management planning and dam safety assessments across Canada. 6 refs., 3 tabs., 4 figs.

  3. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  4. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    International Nuclear Information System (INIS)

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  5. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  6. High-order noise filtering in nontrivial quantum logic gates.

    Science.gov (United States)

    Green, Todd; Uys, Hermann; Biercuk, Michael J

    2012-07-13

    Treating the effects of a time-dependent classical dephasing environment during quantum logic operations poses a theoretical challenge, as the application of noncommuting control operations gives rise to both dephasing and depolarization errors that must be accounted for in order to understand total average error rates. We develop a treatment based on effective Hamiltonian theory that allows us to efficiently model the effect of classical noise on nontrivial single-bit quantum logic operations composed of arbitrary control sequences. We present a general method to calculate the ensemble-averaged entanglement fidelity to arbitrary order in terms of noise filter functions, and provide explicit expressions to fourth order in the noise strength. In the weak noise limit we derive explicit filter functions for a broad class of piecewise-constant control sequences, and use them to study the performance of dynamically corrected gates, yielding good agreement with brute-force numerics.

  7. Small dams need better management

    Science.gov (United States)

    Balcerak, Ernie

    2012-03-01

    Many small dams around the world are poorly maintained and represent a safety hazard, according to Pisaniello et al. Better oversight of small dams is needed, the authors argue. The researchers reviewed literature, conducted case studies in four states in Australia, and developed policy benchmarks and best practices for small-dam management. Small dams, often just several meters high and typically privately owned by individual farmers, have historically caused major damage when they fail. For instance, in China in 1975, 230,000 people died when two large dams failed because of the cumulative failure of 60 smaller upstream dams. In the United States, in 1977 the 8-meter-high Kelly Barnes Lake dam failed, killing 39 people. Many other small-dam failures around the world have resulted in casualties and severe ecological and economic damage.

  8. Cleveland Dam East Abutment : seepage control project

    Energy Technology Data Exchange (ETDEWEB)

    Huber, F.; Siu, D. [Greater Vancouver Regional District, Burnaby, BC (Canada); Ahlfield, S.; Singh, N. [Klohn Crippen Consultants Ltd., Vancouver, BC (Canada)

    2004-09-01

    North Vancouver's 91 meter high Cleveland Dam was built in the 1950s in a deep bedrock canyon to provide a reservoir for potable water to 18 municipalities. Flow in the concrete gravity dam is controlled by a gated spillway, 2 mid-level outlets and intakes and 2 low-level outlets. This paper describes the seepage control measures that were taken at the time of construction as well as the additional measures that were taken post construction to control piezometric levels, seepage and piping and slope instability in the East Abutment. At the time of construction, a till blanket was used to cover the upstream reservoir slope for 200 meters upstream of the dam. A single line grout curtain was used through the overburden from ground surface to bedrock for a distance of 166 meters from the dam to the East Abutment. Since construction, the safety of the dam has been compromised through changes in piezometric pressure, seepage and soil loss. Klohn Crippen Consultants designed a unique seepage control measure to address the instability risk. The project involved excavating 300,000 cubic meters of soil to form a stable slope and construction bench. A vertical wall was constructed to block seepage. The existing seepage control blanket was also extended by 260 meters. The social, environmental and technical issues that were encountered during the rehabilitation project are also discussed. The blanket extension construction has met design requirements and the abutment materials that are most susceptible to internal erosion have been covered by non-erodible blanket materials such as plastic and roller-compacted concrete (RCC). The project was completed on schedule and within budget and has greatly improved the long-term stability of the dam and public safety. 2 refs., 8 figs.

  9. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  10. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  11. Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

    2013-01-01

    V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Highgate dielectrics: Current status and materials properties considerations

    Science.gov (United States)

    Wilk, G. D.; Wallace, R. M.; Anthony, J. M.

    2001-05-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  13. Efficient experimental design of high-fidelity three-qubit quantum gates via genetic programming

    Science.gov (United States)

    Devra, Amit; Prabhu, Prithviraj; Singh, Harpreet; Arvind; Dorai, Kavita

    2018-03-01

    We have designed efficient quantum circuits for the three-qubit Toffoli (controlled-controlled-NOT) and the Fredkin (controlled-SWAP) gate, optimized via genetic programming methods. The gates thus obtained were experimentally implemented on a three-qubit NMR quantum information processor, with a high fidelity. Toffoli and Fredkin gates in conjunction with the single-qubit Hadamard gates form a universal gate set for quantum computing and are an essential component of several quantum algorithms. Genetic algorithms are stochastic search algorithms based on the logic of natural selection and biological genetics and have been widely used for quantum information processing applications. We devised a new selection mechanism within the genetic algorithm framework to select individuals from a population. We call this mechanism the "Luck-Choose" mechanism and were able to achieve faster convergence to a solution using this mechanism, as compared to existing selection mechanisms. The optimization was performed under the constraint that the experimentally implemented pulses are of short duration and can be implemented with high fidelity. We demonstrate the advantage of our pulse sequences by comparing our results with existing experimental schemes and other numerical optimization methods.

  14. High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

    Science.gov (United States)

    Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

    2017-11-03

    Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

  15. Rendering high charge density of states in ionic liquid-gated MoS 2 transistors

    NARCIS (Netherlands)

    Lee, Y.; Lee, J.; Kim, S.; Park, H.S.

    2014-01-01

    We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high

  16. Generation of high-fidelity controlled-NOT logic gates by coupled superconducting qubits

    International Nuclear Information System (INIS)

    Galiautdinov, Andrei

    2007-01-01

    Building on the previous results of the Weyl chamber steering method, we demonstrate how to generate high-fidelity controlled-NOT (CNOT) gates by direct application of certain physically relevant Hamiltonians with fixed coupling constants containing Rabi terms. Such Hamiltonians are often used to describe two superconducting qubits driven by local rf pulses. It is found that in order to achieve 100% fidelity in a system with capacitive coupling of strength g, one Rabi term suffices. We give the exact values of the physical parameters needed to implement such CNOT gates. The gate time and all possible Rabi frequencies are found to be t=π/(2g) and Ω 1 /g=√(64n 2 -1),n=1,2,3,.... Generation of a perfect CNOT gate in a system with inductive coupling, characterized by additional constant k, requires the presence of both Rabi terms. The gate time is again t=π/(2g), but now there is an infinite number of solutions, each of which is valid in a certain range of k and is characterized by a pair of integers (n,m), (Ω 1,2 /g)=√(16n 2 -((k-1/2)) 2 )±√(16m 2 -((k+1/2)) 2 ). We distinguish two cases, depending on the sign of the coupling constant: (i) the antiferromagnetic case (k≥0) with n≥m=0,1,2,... and (ii) the ferromagnetic case (k≤0) with n>m=0,1,2,.... We conclude with consideration of fidelity degradation by switching to resonance. Simulation of time evolution based on the fourth-order Magnus expansion reveals characteristics of the gate similar to those found in the exact case, with slightly shorter gate time and shifted values of the Rabi frequencies

  17. Characterization of transient groundwater flow through a high arch dam foundation during reservoir impounding

    Directory of Open Access Journals (Sweden)

    Yifeng Chen

    2016-08-01

    Full Text Available Even though a large number of large-scale arch dams with height larger than 200 m have been built in the world, the transient groundwater flow behaviors and the seepage control effects in the dam foundations under difficult geological conditions are rarely reported. This paper presents a case study on the transient groundwater flow behaviors in the rock foundation of Jinping I double-curvature arch dam, the world's highest dam of this type to date that has been completed. Taking into account the geological settings at the site, an inverse modeling technique utilizing the time series measurements of both hydraulic head and discharge was adopted to back-calculate the permeability of the foundation rocks, which effectively improves the uniqueness and reliability of the inverse modeling results. The transient seepage flow in the dam foundation during the reservoir impounding was then modeled with a parabolic variational inequality (PVI method. The distribution of pore water pressure, the amount of leakage, and the performance of the seepage control system in the dam foundation during the entire impounding process were finally illustrated with the numerical results.

  18. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  19. Very fast, high peak-power, planar triode amplifiers for driving optical gates

    International Nuclear Information System (INIS)

    Howland, M.M.; Davis, S.J.; Gagnon, W.L.

    1979-01-01

    Recent extensions of the peak power capabilities of planar triodes have made possible the latter's use as very fast pulse amplifiers, to drive optical gates within high-power Nd:glass laser chains. These pulse amplifiers switch voltages in the 20 kV range with rise times of a few nanoseconds, into crystal optical gates that are essentially capacitive loads. This paper describes a simplified procedure for designing these pulse amplifiers. It further outlines the use of bridged-T constant resistance networks to transform load capacitance into pure resistance, independent of frequency

  20. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  1. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2015-09-01

    Full Text Available This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.

  2. Air demand estimation in bottom outlets with the particle finite element method. Susqueda Dam case study

    Science.gov (United States)

    Salazar, Fernando; San-Mauro, Javier; Celigueta, Miguel Ángel; Oñate, Eugenio

    2017-07-01

    Dam bottom outlets play a vital role in dam operation and safety, as they allow controlling the water surface elevation below the spillway level. For partial openings, water flows under the gate lip at high velocity and drags the air downstream of the gate, which may cause damages due to cavitation and vibration. The convenience of installing air vents in dam bottom outlets is well known by practitioners. The design of this element depends basically on the maximum air flow through the air vent, which in turn is a function of the specific geometry and the boundary conditions. The intrinsic features of this phenomenon makes it hard to analyse either on site or in full scaled experimental facilities. As a consequence, empirical formulas are frequently employed, which offer a conservative estimate of the maximum air flow. In this work, the particle finite element method was used to model the air-water interaction in Susqueda Dam bottom outlet, with different gate openings. Specific enhancements of the formulation were developed to consider air-water interaction. The results were analysed as compared to the conventional design criteria and to information gathered on site during the gate operation tests. This analysis suggests that numerical modelling with the PFEM can be helpful for the design of this kind of hydraulic works.

  3. Effects of disturbed liver growth and oxidative stress of high-fat diet-fed dams on cholesterol metabolism in offspring mice.

    Science.gov (United States)

    Kim, Juyoung; Kim, Juhae; Kwon, Young Hye

    2016-08-01

    Changes in nutritional status during gestation and lactation have detrimental effects on offspring metabolism. Several animal studies have shown that maternal high-fat diet (HFD) can predispose the offspring to development of obesity and metabolic diseases, however the mechanisms underlying these transgenerational effects are poorly understood. Therefore, we examined the effect of maternal HFD consumption on metabolic phenotype and hepatic expression of involved genes in dams to determine whether any of these parameters were associated with the metabolic outcomes in the offspring. Female C57BL/6 mice were fed a low-fat diet (LFD: 10% calories from fat) or a high-fat diet (HFD: 45% calories from fat) for three weeks before mating, and during pregnancy and lactation. Dams and their male offspring were studied at weaning. Dams fed an HFD had significantly higher body and adipose tissue weights and higher serum triglyceride and cholesterol levels than dams fed an LFD. Hepatic lipid levels and mRNA levels of genes involved in lipid metabolism, including LXRα, SREBP-2, FXR, LDLR, and ABCG8 were significantly changed by maternal HFD intake. Significantly lower total liver DNA and protein contents were observed in dams fed an HFD, implicating the disturbed liver adaptation in the pregnancy-related metabolic demand. HFD feeding also induced significant oxidative stress in serum and liver of dams. Offspring of dams fed an HFD had significantly higher serum cholesterol levels, which were negatively correlated with liver weights of dams and positively correlated with hepatic lipid peroxide levels in dams. Maternal HFD consumption induced metabolic dysfunction, including altered liver growth and oxidative stress in dams, which may contribute to the disturbed cholesterol homeostasis in the early life of male mice offspring.

  4. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  5. 2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

    Science.gov (United States)

    Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

    2018-02-01

    This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

  6. Study of high-k gate dielectrics by means of positron annihilation

    International Nuclear Information System (INIS)

    Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

    2007-01-01

    High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Small High Schools at Work: A Case Study of Six Gates-Funded Schools in New York City. A Report to the Bill & Melinda Gates Foundation

    Science.gov (United States)

    Fancsali, Cheri; Jaffe-Walter, Reva; Mitchell-McKnight, Vernay; Nevarez, Nancy; Orellana, Eliana, Williams Rose, Lea

    2010-01-01

    The Academy for Educational Development (AED) conducted a case study of six public high schools in New York City as part of a multifaceted evaluation of a small schools initiative funded by the Bill & Melinda Gates Foundation. Through surveys, interviews, and focus groups, the authors gathered information and opinions from the schools'…

  8. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

  9. A single high dose of escitalopram disrupts sensory gating and habituation, but not sensorimotor gating in healthy volunteers

    DEFF Research Database (Denmark)

    Oranje, Bob; Wienberg, Malene; Glenthøj, Birte Yding

    2011-01-01

    Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers. In the ......Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers....... In the current study a higher dose of 15mg was used. The hypothesis was that this higher dose of escitalopram would not only disrupt habituation, but also sensory and sensorimotor gating. Twenty healthy male volunteers received either placebo or 15mg escitalopram, after which they were tested in a P50...... suppression, and a habituation and prepulse inhibition (PPI) of the startle reflex paradigm. Escitalopram significantly decreased P50 suppression and habituation, but had no effect on PPI. The results indicate that habituation and sensory gating are disrupted by increased serotonergic activity, while...

  10. Perspectives on dam safety in Canada

    International Nuclear Information System (INIS)

    Halliday, R.

    2004-01-01

    Canadian dam safety issues were reviewed from the perspective of a water resources engineer who is not a dam safety practitioner. Several external factors affecting dam safety were identified along with perceived problems in dam safety administration. The author claims that the main weakness in safety practices can be attributed to provincial oversights and lack of federal engagement. Some additions to the Canadian Dam Safety Guidelines were proposed to address these weaknesses. Canada has hundreds of large dams and high hazard dams whose failure would result in severe downstream consequences. The safety of dams built on boundary waters shared with the United States have gained particular attention from the International Joint Commission. This paper also examined safety criteria for concerns such as aging dams, sabotage and global climate change that may compromise the safety of a dam. 26 refs

  11. High-frequency self-aligned graphene transistors with transferred gate stacks

    Science.gov (United States)

    Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

  12. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  13. Application of ultra-fast high-resolution gated-image intensifiers to laser fusion studies

    International Nuclear Information System (INIS)

    Lieber, A.J.; Benjamin, R.F.; Sutphin, H.D.; McCall, G.H.

    1975-01-01

    Gated-image intensifiers for fast framing have found high utility in laser-target interaction studies. X-ray pinhole camera photographs which can record asymmetries of laser-target interactions have been instrumental in further system design. High-resolution high-speed x-ray images of laser irradiated targets are formed using pinhole optics and electronically amplified by proximity focused channelplate intensifiers before being recorded on film. Spectral resolution is obtained by filtering. In these applications shutter duration is determined by source duration. Electronic gating serves to reduce background thereby enhancing signal-to-noise ratio. Cameras are used to view the self light of the interaction but may also be used for shadowgraphs. Sources for shadowgraphs may be sequenced to obtain a series of pictures with effective rates of 10 10 frame/s. Multiple aperatures have been used to obtain stereo x-ray views, yielding three dimensional information about the interactions. (author)

  14. Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

    Directory of Open Access Journals (Sweden)

    Jiabao Sun

    2015-01-01

    Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.

  15. High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

    Science.gov (United States)

    Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

    2018-04-01

    We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

  16. Improvement of high-fold gamma-ray data processing: the spherical gate method

    CERN Document Server

    Theisen, C; Stezowski, O; Vivien, J P

    1999-01-01

    A new method for optimizing the processing of events from a highly efficient large array gamma-ray detector is described in this article. The spherical gates technique, developed to project high-fold events, consists of optimizing n-dimensional gate shape as a function of peak width and shape of each detector. Formulas in closed form are proposed for determining the projected statistics from coincidence fold and peak shape and for estimating the increased quality of projected spectra. This procedure has been tested on high-fold, high statistics data sets including superdeformed cascades. Compared to the classical 'square-gate' technique, better peak-to-background ratios as well as a reduction in fluctuations are observed. A quality parameter is defined to characterize the optimal parameter set. This method leads roughly to a gain in spectral quality equivalent of one fold. It is also shown that the efficiency of the method increases with coincidence fold. This should be particularly suited for future higher-f...

  17. Integration issues of high-k and metal gate into conventional CMOS technology

    International Nuclear Information System (INIS)

    Song, S.C.; Zhang, Z.; Huffman, C.; Bae, S.H.; Sim, J.H.; Kirsch, P.; Majhi, P.; Moumen, N.; Lee, B.H.

    2006-01-01

    Issues surrounding the integration of Hf-based high-k dielectrics with metal gates in a conventional CMOS flow are discussed. The careful choice of a gate stack process as well as optimization of other CMOS process steps enables robust CMOSFETs with a wide process latitude. HfO 2 of a 2 nm physical thickness shows complete suppression of transient charge trapping resulting from a significant reduction in film volume as well as kinetically suppressed crystallization. Metal thickness is also critical when optimizing physical stress effects and minimizing dopant diffusion. A high temperature anneal after source and drain implantation in a conventional CMOSFET process reduces the interface state density and improves electron mobility

  18. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Masamichi Suzuki

    2012-03-01

    Full Text Available A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3 high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process.

  19. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different highgate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with highgate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different highgate dielectric materials and explained the interface effect by charge band diagram.

  20. High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

    Science.gov (United States)

    Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

    2015-05-22

    A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

  1. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  2. High-speed two-frame gated camera for parameters measurement of Dragon-Ⅰ LIA

    International Nuclear Information System (INIS)

    Jiang Xiaoguo; Wang Yuan; Zhang Kaizhi; Shi Jinshui; Deng Jianjun; Li Jin

    2012-01-01

    The time-resolved measurement system which can work at very high speed is necessary in electron beam parameter diagnosis for Dragon-Ⅰ linear induction accelerator (LIA). A two-frame gated camera system has been developed and put into operation. The camera system adopts the optical principle of splitting the imaging light beam into two parts in the imaging space of a lens with long focus length. It includes lens coupled gated image intensifier, CCD camera, high speed shutter trigger device based on large scale field programmable gate array. The minimum exposure time for each image is about 3 ns, and the interval time between two images can be adjusted with a step of about 0.5 ns. The exposure time and the interval time can be independently adjusted and can reach about 1 s. The camera system features good linearity, good response uniformity, equivalent background illumination (EBI) as low as about 5 electrons per pixel per second, large adjustment range of sensitivity, and excel- lent flexibility and adaptability in applications. The camera system can capture two frame images at one time with the image size of 1024 x 1024. It meets the requirements of measurement for Dragon-Ⅰ LIA. (authors)

  3. Highly flexible SRAM cells based on novel tri-independent-gate FinFET

    Science.gov (United States)

    Liu, Chengsheng; Zheng, Fanglin; Sun, Yabin; Li, Xiaojin; Shi, Yanling

    2017-10-01

    In this paper, a novel tri-independent-gate (TIG) FinFET is proposed for highly flexible SRAM cells design. To mitigate the read-write conflict, two kinds of SRAM cells based on TIG FinFETs are designed, and high tradeoff are obtained between read stability and speed. Both cells can offer multi read operations for frequency requirement with single voltage supply. In the first TIG FinFET SRAM cell, the strength of single-fin access transistor (TIG FinFET) can be flexibly adjusted by selecting five different modes to meet the needs of dynamic frequency design. Compared to the previous double-independent-gate (DIG) FinFET SRAM cell, 12.16% shorter read delay can be achieved with only 1.62% read stability decrement. As for the second TIG FinFET SRAM cell, pass-gate feedback technology is applied and double-fin TIG FinFETs are used as access transistors to solve the severe write-ability degradation. Three modes exist to flexibly adjust read speed and stability, and 68.2% larger write margin and 51.7% shorter write delay are achieved at only the expense of 26.2% increase in leakage power, with the same layout area as conventional FinFET SRAM cell.

  4. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  5. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  6. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  7. Dam Safety Concepts

    NARCIS (Netherlands)

    Duricic, J.

    2014-01-01

    The majority of dams constructed in the world are dams that can be categorized as embankment dams. Throughout history we can point to many failures of dams, and embankment dams in particular. Nowadays it is clear that the goal to construct stable dams has not been achieved, even with advanced

  8. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Influence of Respiratory Gating, Image Filtering, and Animal Positioning on High-Resolution Electrocardiography-Gated Murine Cardiac Single-Photon Emission Computed Tomography

    Directory of Open Access Journals (Sweden)

    Chao Wu

    2015-01-01

    Full Text Available Cardiac parameters obtained from single-photon emission computed tomographic (SPECT images can be affected by respiratory motion, image filtering, and animal positioning. We investigated the influence of these factors on ultra-high-resolution murine myocardial perfusion SPECT. Five mice were injected with 99m technetium (99mTc-tetrofosmin, and each was scanned in supine and prone positions in a U-SPECT-II scanner with respiratory and electrocardiographic (ECG gating. ECG-gated SPECT images were created without applying respiratory motion correction or with two different respiratory motion correction strategies. The images were filtered with a range of three-dimensional gaussian kernels, after which end-diastolic volumes (EDVs, end-systolic volumes (ESVs, and left ventricular ejection fractions were calculated. No significant differences in the measured cardiac parameters were detected when any strategy to reduce or correct for respiratory motion was applied, whereas big differences (> 5% in EDV and ESV were found with regard to different positioning of animals. A linear relationship (p < .001 was found between the EDV or ESV and the kernel size of the gaussian filter. In short, respiratory gating did not significantly affect the cardiac parameters of mice obtained with ultra-high-resolution SPECT, whereas the position of the animals and the image filters should be the same in a comparative study with multiple scans to avoid systematic differences in measured cardiac parameters.

  10. End-expiration respiratory gating for a high-resolution stationary cardiac SPECT system

    International Nuclear Information System (INIS)

    Chan, Chung; Sinusas, Albert J; Liu, Chi; Harris, Mark; Le, Max; Biondi, James; Grobshtein, Yariv; Liu, Yi-Hwa

    2014-01-01

    Respiratory and cardiac motions can degrade myocardial perfusion SPECT (MPS) image quality and reduce defect detection and quantitative accuracy. In this study, we developed a dual respiratory and cardiac gating system for a high-resolution fully stationary cardiac SPECT scanner in order to improve the image quality and defect detection. Respiratory motion was monitored using a compressive sensor pillow connected to a dual respiratory–cardiac gating box, which sends cardiac triggers only during end-expiration phases to the single cardiac trigger input on the SPECT scanners. The listmode data were rebinned retrospectively into end-expiration frames for respiratory motion reduction or eight cardiac gates only during end-expiration phases to compensate for both respiratory and cardiac motions. The proposed method was first validated on a motion phantom in the presence and absence of multiple perfusion defects, and then applied on 11 patient studies with and without perfusion defects. In the normal phantom studies, the end-expiration gated SPECT (EXG-SPECT) reduced respiratory motion blur and increased myocardium to blood pool contrast by 51.2% as compared to the ungated images. The proposed method also yielded an average of 11.2% increase in myocardium to defect contrast as compared to the ungated images in the phantom studies with perfusion defects. In the patient studies, EXG-SPECT significantly improved the myocardium to blood pool contrast (p < 0.005) by 24% on average as compared to the ungated images, and led to improved perfusion uniformity across segments on polar maps for normal patients. For a patient with defect, EXG-SPECT improved the defect contrast and definition. The dual respiratory–cardiac gating further reduced the blurring effect, increased the myocardium to blood pool contrast significantly by 36% (p < 0.05) compared to EXG-SPECT, and further improved defect characteristics and visualization of fine structures at the expense of increased

  11. The mathematics of dam safety

    Energy Technology Data Exchange (ETDEWEB)

    Widmann, R. [Osterreichische Gesellschaft fuer Geomechanik, Salzburg (Austria)

    1997-05-01

    The safety of a dam is determined by its design, construction and supervision during operation. High arch dam failures have dropped dramatically since the early part of this century. An essential part of the success story relates to improved measurement techniques that can detect earlier unexpected behaviour that may lead to failure. (UK)

  12. High-throughput gated photon counter with two detection windows programmable down to 70 ps width

    Energy Technology Data Exchange (ETDEWEB)

    Boso, Gianluca; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Zappa, Franco [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Mora, Alberto Dalla [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy)

    2014-01-15

    We present the design and characterization of a high-throughput gated photon counter able to count electrical pulses occurring within two well-defined and programmable detection windows. We extensively characterized and validated this instrument up to 100 Mcounts/s and with detection window width down to 70 ps. This instrument is suitable for many applications and proves to be a cost-effective and compact alternative to time-correlated single-photon counting equipment, thanks to its easy configurability, user-friendly interface, and fully adjustable settings via a Universal Serial Bus (USB) link to a remote computer.

  13. High-throughput gated photon counter with two detection windows programmable down to 70 ps width

    International Nuclear Information System (INIS)

    Boso, Gianluca; Tosi, Alberto; Zappa, Franco; Mora, Alberto Dalla

    2014-01-01

    We present the design and characterization of a high-throughput gated photon counter able to count electrical pulses occurring within two well-defined and programmable detection windows. We extensively characterized and validated this instrument up to 100 Mcounts/s and with detection window width down to 70 ps. This instrument is suitable for many applications and proves to be a cost-effective and compact alternative to time-correlated single-photon counting equipment, thanks to its easy configurability, user-friendly interface, and fully adjustable settings via a Universal Serial Bus (USB) link to a remote computer

  14. Influence of Aripiprazole, Risperidone, and Amisulpride on Sensory and Sensorimotor Gating in Healthy ‘Low and High Gating' Humans and Relation to Psychometry

    Science.gov (United States)

    Csomor, Philipp A; Preller, Katrin H; Geyer, Mark A; Studerus, Erich; Huber, Theodor; Vollenweider, Franz X

    2014-01-01

    Despite advances in the treatment of schizophrenia spectrum disorders with atypical antipsychotics (AAPs), there is still need for compounds with improved efficacy/side-effect ratios. Evidence from challenge studies suggests that the assessment of gating functions in humans and rodents with naturally low-gating levels might be a useful model to screen for novel compounds with antipsychotic properties. To further evaluate and extend this translational approach, three AAPs were examined. Compounds without antipsychotic properties served as negative control treatments. In a placebo-controlled, within-subject design, healthy males received either single doses of aripiprazole and risperidone (n=28), amisulpride and lorazepam (n=30), or modafinil and valproate (n=30), and placebo. Prepulse inhibiton (PPI) and P50 suppression were assessed. Clinically associated symptoms were evaluated using the SCL-90-R. Aripiprazole, risperidone, and amisulpride increased P50 suppression in low P50 gaters. Lorazepam, modafinil, and valproate did not influence P50 suppression in low gaters. Furthermore, low P50 gaters scored significantly higher on the SCL-90-R than high P50 gaters. Aripiprazole increased PPI in low PPI gaters, whereas modafinil and lorazepam attenuated PPI in both groups. Risperidone, amisulpride, and valproate did not influence PPI. P50 suppression in low gaters appears to be an antipsychotic-sensitive neurophysiologic marker. This conclusion is supported by the association of low P50 suppression and higher clinically associated scores. Furthermore, PPI might be sensitive for atypical mechanisms of antipsychotic medication. The translational model investigating differential effects of AAPs on gating in healthy subjects with naturally low gating can be beneficial for phase II/III development plans by providing additional information for critical decision making. PMID:24801767

  15. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  16. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  17. High performance tunnel field-effect transistor by gate and source engineering

    International Nuclear Information System (INIS)

    Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

    2014-01-01

    As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I ON /I OFF ratio (∼10 7 ) at V DS  = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I ON /I OFF ratio of ∼10 8 and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec −1 was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching. (paper)

  18. High performance tunnel field-effect transistor by gate and source engineering.

    Science.gov (United States)

    Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

    2014-12-19

    As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I(ON)/I(OFF) ratio (∼ 10(7)) at V(DS) = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high ION/IOFF ratio of ∼ 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.

  19. Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor.

    Science.gov (United States)

    Eliza, Sazia A; Lee, Ida; Tulip, Fahmida S; Mostafa, Salwa; Greenbaum, Elias; Ericson, M Nance; Islam, Syed K

    2011-09-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (~6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs. © 2011 IEEE

  20. Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Tulip, Fahmida S [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Greenbaum, Elias [ORNL; Ericson, Milton Nance [ORNL

    2011-01-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale nm reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

  1. Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins

    International Nuclear Information System (INIS)

    Zeimpekis, I; Sun, K; Hu, C; Ditshego, N M J; De Planque, M R R; Chong, H M H; Morgan, H; Ashburn, P; Thomas, O

    2016-01-01

    We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH"−"1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH"−"1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%. (paper)

  2. To what extent do long-duration high-volume dam releases influence river–aquifer interactions? A case study in New South Wales, Australia

    KAUST Repository

    Graham, Peter W.

    2014-11-20

    Long-duration high-volume dam releases are unique anthropogenic events with no naturally occurring equivalents. The impact from such dam releases on a downstream Quaternary alluvial aquifer in New South Wales, Australia, is assessed. It is observed that long-duration (>26 days), high-volume dam releases (>8,000 ML/day average) result in significant variations in river–aquifer interactions. These variations include a flux from the river to the aquifer up to 6.3 m3/day per metre of bank (at distances of up to 330 m from the river bank), increased extent and volume of recharge/bank storage, and a long-term (>100 days) reversal of river–aquifer fluxes. In contrast, during lower-volume events (<2,000 ML/day average) the flux was directed from the aquifer to the river at rates of up to 1.6 m3/day per metre of bank. A groundwater-head prediction model was constructed and river–aquifer fluxes were calculated; however, predicted fluxes from this method showed poor correlation to fluxes calculated using actual groundwater heads. Long-duration high-volume dam releases have the potential to skew estimates of long-term aquifer resources and detrimentally alter the chemical and physical properties of phreatic aquifers flanking the river. The findings have ramifications for improved integrated management of dam systems and downstream aquifers.

  3. To what extent do long-duration high-volume dam releases influence river-aquifer interactions? A case study in New South Wales, Australia

    Science.gov (United States)

    Graham, P. W.; Andersen, M. S.; McCabe, M. F.; Ajami, H.; Baker, A.; Acworth, I.

    2015-03-01

    Long-duration high-volume dam releases are unique anthropogenic events with no naturally occurring equivalents. The impact from such dam releases on a downstream Quaternary alluvial aquifer in New South Wales, Australia, is assessed. It is observed that long-duration (>26 days), high-volume dam releases (>8,000 ML/day average) result in significant variations in river-aquifer interactions. These variations include a flux from the river to the aquifer up to 6.3 m3/day per metre of bank (at distances of up to 330 m from the river bank), increased extent and volume of recharge/bank storage, and a long-term (>100 days) reversal of river-aquifer fluxes. In contrast, during lower-volume events (bank. A groundwater-head prediction model was constructed and river-aquifer fluxes were calculated; however, predicted fluxes from this method showed poor correlation to fluxes calculated using actual groundwater heads. Long-duration high-volume dam releases have the potential to skew estimates of long-term aquifer resources and detrimentally alter the chemical and physical properties of phreatic aquifers flanking the river. The findings have ramifications for improved integrated management of dam systems and downstream aquifers.

  4. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    Science.gov (United States)

    Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

    2015-07-28

    Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

  5. High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric

    Science.gov (United States)

    Ma, Y. X.; Han, C. Y.; Tang, W. M.; Lai, P. T.

    2017-07-01

    Pentacene organic thin-film transistors (OTFT) using high-k LaTiON gate dielectric with different Ti contents are investigated. The LaxTi(1-x)ON films (with x = 1, 0.87, 0.76, and 0.67) are deposited by reactive sputtering followed by an annealing in N2 at 200 °C. The OTFT with La0.87Ti0.13ON can achieve a high carrier mobility of 2.6 cm2/V.s, a small threshold voltage of -1.5 V, a small sub-threshold swing of 0.07 V/dec, and a small hysteresis of 0.17 V. AFM and X-ray photoelectron spectroscopy reveal that Ti can suppress the hygroscopicity of La oxide to achieve a smoother dielectric surface, which can result in larger pentacene grains and thus higher carrier mobility. All the devices show a clockwise hysteresis because both the LaOH formation and Ti incorporation can generate acceptor-like traps in the gate dielectric.

  6. Design, construction and performance of the Oldman River Dam grout curtain

    Energy Technology Data Exchange (ETDEWEB)

    Hartmaier, H.; Davachi, M. [Acres International Ltd., Calgary, AB (Canada); Dharmawardene, W. [Alberta Environment, Edmonton, AB (Canada); Sinclair, B. [Acres International Ltd., Niagara Falls, ON (Canada)

    2002-07-01

    The 76 m high Oldman River Dam was constructed between 1986 and 1991 near Pincher Creek, Alberta to provide flow regulation and on-stream storage of water for multi-purpose use and irrigation services as well as hydroelectric development. The dam's main structure includes an earth- and rockfill dam, a low earthfill dyke 1500 m long, twin diversion/low level outlet tunnels, a gated spillways structure, and 2 drainage tunnels. A 1.3 km long, three-line grout curtain up to 100 m deep extends below the foundation of the dam and spillway. The grout curtain was built in undeformed Paleocene sedimentary rocks affected by stress relief due to river valley erosion. 80 per cent of the grout consumption was from bedrock structural features. Piezometers, slope indicators and flow measurement weirs were installed in the dam and abutment areas both during and after construction to monitor the performance of the grout curtain. Instrument readings indicate that the grout curtain is successfully preventing the transmission of reservoir pressures to the foundation beneath the downstream shell of the dam. The piezometric pressures downstream of the grout curtain are the same as they were in the foundation before impounding. A small amount of seepage has appeared at the end of the grout curtain at the eastern end of the abutment of the spillway but it is not considered to be significant. 3 refs., 4 figs.

  7. Multi-channel logical circuit module used for high-speed, low amplitude signals processing and QDC gate signals generation

    International Nuclear Information System (INIS)

    Su Hong; Li Xiaogang; Zhu Haidong; Ma Xiaoli; Yin Weiwei; Li Zhuyu; Jin Genming; Wu Heyu

    2001-01-01

    A new kind of logical circuit will be introduced in brief. There are 16 independent channels in the module. The module receives low amplitude signals(≥40 mV), and processes them to amplify, shape, delay, sum and etc. After the processing each channel produces 2 pairs of ECL logical signal to feed the gate of QDC as the gate signal of QDC. The module consists of high-speed preamplifier unit, high-speed discriminate unit, delaying and shaping unit, summing unit and trigger display unit. The module is developed for 64 CH. 12 BIT Multi-event QDC. The impedance of QDC is 110 Ω. Each gate signal of QDC requires a pair of differential ECL level, Min. Gate width 30 ns and Max. Gate width 1 μs. It has showed that the outputs of logical circuit module satisfy the QDC requirements in experiment. The module can be used on data acquisition system to acquire thousands of data at high-speed ,high-density and multi-parameter, in heavy particle nuclear physics experiment. It also can be used to discriminate multi-coincidence events

  8. Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

    Science.gov (United States)

    Li, Min

    High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a

  9. Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.

    Science.gov (United States)

    Khan, Mansoor Ali; Heo, Jun-Woo; Kim, Hyun-Seok; Park, Hyun-Chang

    2014-11-01

    In this work, different gate-head structures have been compared in the context of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). Field-plate (FP) technology self-aligned to the gate electrode leads to various gate-head structures, most likely gamma (γF)-gate, camel (see symbol)-gate, and mushroom-shaped (T)-gate. In-depth comparison of recessed gate-head structures demonstrated that key performance metrics such as transconductance, output current, and breakdown voltage are better with the T-gate head structure. The recessed T-gate with its one arm toward the source side not only reduces the source-access resistance (R(g) +R(gs)), but also minimizes the source-side dispersion and current leakage, resulting in high transconductance (G(m)) and output current (I(DS)). At the same time, the other arm toward the drain-side reduces the drain-side dispersion and tends to distribute electric field peaks uniformly, resulting in high breakdown voltage (V(BR)). DC and RF analysis showed that the recessed T-gate FP-HEMT is a suitable candidate not only for high-frequency operation, but also for high-power applications.

  10. Performance Analysis of Modified Drain Gating Techniques for Low Power and High Speed Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Shikha Panwar

    2014-01-01

    Full Text Available This paper presents several high performance and low power techniques for CMOS circuits. In these design methodologies, drain gating technique and its variations are modified by adding an additional NMOS sleep transistor at the output node which helps in faster discharge and thereby providing higher speed. In order to achieve high performance, the proposed design techniques trade power for performance in the delay critical sections of the circuit. Intensive simulations are performed using Cadence Virtuoso in a 45 nm standard CMOS technology at room temperature with supply voltage of 1.2 V. Comparative analysis of the present circuits with standard CMOS circuits shows smaller propagation delay and lesser power consumption.

  11. High Grade Glioma Mimicking Voltage Gated Potassium Channel Complex Associated Antibody Limbic Encephalitis

    Directory of Open Access Journals (Sweden)

    Dilan Athauda

    2014-01-01

    Full Text Available Though raised titres of voltage gated potassium channel (VGKC complex antibodies have been occasionally associated with extracranial tumours, mainly presenting as Morvan's Syndrome or neuromyotonia, they have not yet been reported to be associated with an intracranial malignancy. This is especially important as misdiagnosis of these conditions and delay of the appropriate treatment can have important prognostic implications. We describe a patient with a high grade glioma presenting with clinical, radiological, and serological features consistent with the diagnosis of VGKC antibody associated limbic encephalitis (LE. This is the first association between a primary brain tumour and high titre of VGKC complex antibodies. Clinicoradiological progression despite effective immunosuppressive treatment should prompt clinicians to look for alternative diagnoses. Further studies to elucidate a possible association between VGKC complex and other surface antigen antibodies with primary brain tumours should be carried out.

  12. High grade glioma mimicking voltage gated potassium channel complex associated antibody limbic encephalitis.

    Science.gov (United States)

    Athauda, Dilan; Delamont, R S; Pablo-Fernandez, E De

    2014-01-01

    Though raised titres of voltage gated potassium channel (VGKC) complex antibodies have been occasionally associated with extracranial tumours, mainly presenting as Morvan's Syndrome or neuromyotonia, they have not yet been reported to be associated with an intracranial malignancy. This is especially important as misdiagnosis of these conditions and delay of the appropriate treatment can have important prognostic implications. We describe a patient with a high grade glioma presenting with clinical, radiological, and serological features consistent with the diagnosis of VGKC antibody associated limbic encephalitis (LE). This is the first association between a primary brain tumour and high titre of VGKC complex antibodies. Clinicoradiological progression despite effective immunosuppressive treatment should prompt clinicians to look for alternative diagnoses. Further studies to elucidate a possible association between VGKC complex and other surface antigen antibodies with primary brain tumours should be carried out.

  13. Methyl donor supplementation alters cognitive performance and motivation in female offspring from high-fat diet-fed dams.

    Science.gov (United States)

    McKee, Sarah E; Grissom, Nicola M; Herdt, Christopher T; Reyes, Teresa M

    2017-06-01

    During gestation, fetal nutrition is entirely dependent on maternal diet. Maternal consumption of excess fat during pregnancy has been linked to an increased risk of neurologic disorders in offspring, including attention deficit/hyperactivity disorder, autism, and schizophrenia. In a mouse model, high-fat diet (HFD)-fed offspring have cognitive and executive function deficits as well as whole-genome DNA and promoter-specific hypomethylation in multiple brain regions. Dietary methyl donor supplementation during pregnancy or adulthood has been used to alter DNA methylation and behavior. Given that extensive brain development occurs during early postnatal life-particularly within the prefrontal cortex (PFC), a brain region critical for executive function-we examined whether early life methyl donor supplementation ( e.g., during adolescence) could ameliorate executive function deficits observed in offspring that were exposed to maternal HFD. By using operant testing, progressive ratio, and the PFC-dependent 5-choice serial reaction timed task (5-CSRTT), we determined that F1 female offspring (B6D2F1/J) from HFD-fed dams have decreased motivation (decreased progressive ratio breakpoint) and require a longer stimulus length to complete the 5-CSRTT task successfully, whereas early life methyl donor supplementation increased motivation and shortened the minimum stimulus length required for a correct response in the 5-CSRTT. Of interest, we found that expression of 2 chemokines, CCL2 and CXCL10, correlated with the median stimulus length in the 5-CSRTT. Furthermore, we found that acute adult supplementation of methyl donors increased motivation in HFD-fed offspring and those who previously received supplementation with methyl donors. These data point to early life as a sensitive time during which dietary methyl donor supplementation can alter PFC-dependent cognitive behaviors.-McKee, S. E., Grissom, N. M., Herdt, C. T., Reyes, T. M. Methyl donor supplementation alters

  14. Methyl donor supplementation alters cognitive performance and motivation in female offspring from high-fat diet–fed dams

    Science.gov (United States)

    McKee, Sarah E.; Grissom, Nicola M.; Herdt, Christopher T.; Reyes, Teresa M.

    2017-01-01

    During gestation, fetal nutrition is entirely dependent on maternal diet. Maternal consumption of excess fat during pregnancy has been linked to an increased risk of neurologic disorders in offspring, including attention deficit/hyperactivity disorder, autism, and schizophrenia. In a mouse model, high-fat diet (HFD)–fed offspring have cognitive and executive function deficits as well as whole-genome DNA and promoter-specific hypomethylation in multiple brain regions. Dietary methyl donor supplementation during pregnancy or adulthood has been used to alter DNA methylation and behavior. Given that extensive brain development occurs during early postnatal life—particularly within the prefrontal cortex (PFC), a brain region critical for executive function—we examined whether early life methyl donor supplementation (e.g., during adolescence) could ameliorate executive function deficits observed in offspring that were exposed to maternal HFD. By using operant testing, progressive ratio, and the PFC-dependent 5-choice serial reaction timed task (5-CSRTT), we determined that F1 female offspring (B6D2F1/J) from HFD-fed dams have decreased motivation (decreased progressive ratio breakpoint) and require a longer stimulus length to complete the 5-CSRTT task successfully, whereas early life methyl donor supplementation increased motivation and shortened the minimum stimulus length required for a correct response in the 5-CSRTT. Of interest, we found that expression of 2 chemokines, CCL2 and CXCL10, correlated with the median stimulus length in the 5-CSRTT. Furthermore, we found that acute adult supplementation of methyl donors increased motivation in HFD-fed offspring and those who previously received supplementation with methyl donors. These data point to early life as a sensitive time during which dietary methyl donor supplementation can alter PFC-dependent cognitive behaviors.—McKee, S. E., Grissom, N. M., Herdt, C. T., Reyes, T. M. Methyl donor supplementation

  15. Selection and evaluation of an ultra high vacuum gate valve for Isabelle beam line vacuum system

    International Nuclear Information System (INIS)

    Foerster, C.L.; McCafferty, D.

    1980-01-01

    A minimum of eighty-four (84) Ultra High Vacuum Gate Valves will be utilized in ISABELLE to protect proton beam lines from catastrophic vacuum failure and to provide sector isolation for maintenance requirements. The valve to be selected must function at less than 1 x 10 -11 Torr pressure and be bakeable to 300 0 C in its open or closed position. In the open position, the valve must have an RF shield to make the beam line walls appear continuous. Several proposed designs were built and evaluated. The evaluation consisted mainly of leak testing, life tests, thermal cycling, mass spectrometer analysis, and 10 -12 Torr operation. Problems with initial design and fabrication were resolved. Special requirements for design and construction were developed. This paper describes the tests on two final prototypes which appear to be the best candidates for ISABELLE operation

  16. Braids and phase gates through high-frequency virtual tunneling of Majorana zero modes

    Science.gov (United States)

    Gorantla, Pranay; Sensarma, Rajdeep

    2018-05-01

    Braiding of non-Abelian Majorana anyons is a first step towards using them in quantum computing. We propose a protocol for braiding Majorana zero modes formed at the edges of nanowires with strong spin-orbit coupling and proximity-induced superconductivity. Our protocol uses high-frequency virtual tunneling between the ends of the nanowires in a trijunction, which leads to an effective low-frequency coarse-grained dynamics for the system, to perform the braid. The braiding operation is immune to amplitude noise in the drives and depends only on relative phase between the drives, which can be controlled by the usual phase-locking techniques. We also show how a phase gate, which is necessary for universal quantum computation, can be implemented with our protocol.

  17. High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

    Science.gov (United States)

    Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

    2010-10-29

    Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

  18. NRC inventory of dams

    International Nuclear Information System (INIS)

    Lear, G.E.; Thompson, O.O.

    1983-01-01

    The NRC Inventory of Dams has been prepared as required by the charter of the NRC Dam Safety Officer. The inventory lists 51 dams associated with nuclear power plant sites and 14 uranium mill tailings dams (licensed by NRC) in the US as of February 1, 1982. Of the 85 listed nuclear power plants (148 units), 26 plants obtain cooling water from impoundments formed by dams. The 51 dams associated with the plants are: located on a plant site (29 dams at 15 plant sites); located off site but provide plant cooling water (18 dams at 11 additional plant sites); and located upstream from a plant (4 dams) - they have been identified as dams whose failure, and ensuing plant flooding, could result in a radiological risk to the public health and safety. The dams that might be considered NRC's responsibility in terms of the federal dam safety program are identified. This group of dams (20 on nuclear power plant sites and 14 uranium mill tailings dams) was obtained by eliminating dams that do not pose a flooding hazard (e.g., submerged dams) and dams that are regulated by another federal agency. The report includes the principal design features of all dams and related useful information

  19. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  20. High-fidelity Rydberg quantum gate via a two-atom dark state

    DEFF Research Database (Denmark)

    Petrosyan, David; Motzoi, Felix; Saffman, Mark

    2017-01-01

    We propose a two-qubit gate for neutral atoms in which one of the logical state components adiabatically follows a two-atom dark state formed by the laser coupling to a Rydberg state and a strong, resonant dipole-dipole exchange interaction between two Rydberg excited atoms. Our gate exhibits...

  1. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  2. Back Analysis of the Permeability Coefficient of a High Core Rockfill Dam Based on a RBF Neural Network Optimized Using the PSO Algorithm

    Directory of Open Access Journals (Sweden)

    Shichun Chi

    2015-01-01

    Full Text Available It is important to determine the seepage field parameters of a high core rockfill dam using the seepage data obtained during operation. For the Nuozhadu high core rockfill dam, a back analysis model is proposed using the radial basis function neural network optimized using a particle swarm optimization algorithm (PSO-RBFNN and the technology of finite element analysis for solving the saturated-unsaturated seepage field. The recorded osmotic pressure curves of osmometers, which are distributed in the maximum cross section, are applied to this back analysis. The permeability coefficients of the dam materials are retrieved using the measured seepage pressure values while the steady state seepage condition exists; that is, the water lever remains unchanged. Meanwhile, the parameters are tested using the unstable saturated-unsaturated seepage field while the water level rises. The results show that the permeability coefficients are reasonable and can be used to study the real behavior of a seepage field of a high core rockfill dam during its operation period.

  3. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  4. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  5. Fast, high-fidelity, all-optical and dynamically-controlled polarization gate using room-temperature atomic vapor

    Energy Technology Data Exchange (ETDEWEB)

    Li, Runbing [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071 (China); Center for Cold Atom Physics, Chinese Academy of Sciences, Wuhan 430071 (China); Zhu, Chengjie [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Deng, L.; Hagley, E. W. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

    2014-10-20

    We demonstrate a fast, all-optical polarization gate in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, we selectively write a π phase shift to one circularly-polarized component of a linearly-polarized input signal field. The output signal field maintains its original strength but acquires a 90° linear polarization rotation, demonstrating fast, high-fidelity, dynamically-controlled polarization gate operation. The intensity of the polarization-switching field used in this PKSPK-based polarization gate operation is only 2 mW/cm{sup 2}, which would be equivalent to 0.5 nW of light power (λ = 800 nm) confined in a typical commercial photonic hollow-core fiber. This development opens a realm of possibilities for potential future extremely low light level telecommunication and information processing systems.

  6. High-performance colorimeter with an electronic bubble gate for use in miniaturized continuous-flow analyzers.

    Science.gov (United States)

    Neeley, W E; Wardlaw, S C; Yates, T; Hollingsworth, W G; Swinnen, M E

    1976-02-01

    We describe a high-performance colorimeter with an electronic bubble gate for use with miniaturized continuous-flow analyzers. The colorimeter has a flow-through cuvette with optically flat quartz windows that allows a bubbled stream to pass freely without any breakup or retention of bubbles. The fluid volume in the light path is only 1.8 mul. The electronic bubble gate selectively removes that portion of the photodector signal produced by the air bubbles passing through the flow cell and allows that portion of the signal attributable to the fluid segment to pass to the recorder. The colorimeter is easy to use, rugged, inexpensive, and requires minimal adjustments.

  7. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  8. Using a High-Resolution Ensemble Modeling Method to Inform Risk-Based Decision-Making at Taylor Park Dam, Colorado

    Science.gov (United States)

    Mueller, M.; Mahoney, K. M.; Holman, K. D.

    2015-12-01

    The Bureau of Reclamation (Reclamation) is responsible for the safety of Taylor Park Dam, located in central Colorado at an elevation of 9300 feet. A key aspect of dam safety is anticipating extreme precipitation, runoff and the associated inflow of water to the reservoir within a probabilistic framework for risk analyses. The Cooperative Institute for Research in Environmental Sciences (CIRES) has partnered with Reclamation to improve understanding and estimation of precipitation in the western United States, including the Taylor Park watershed. A significant challenge is that Taylor Park Dam is located in a relatively data-sparse region, surrounded by mountains exceeding 12,000 feet. To better estimate heavy precipitation events in this basin, a high-resolution modeling approach is used. The Weather Research and Forecasting (WRF) model is employed to simulate events that have produced observed peaks in streamflow at the location of interest. Importantly, an ensemble of model simulations are run on each event so that uncertainty bounds (i.e., forecast error) may be provided such that the model outputs may be more effectively used in Reclamation's risk assessment framework. Model estimates of precipitation (and the uncertainty thereof) are then used in rainfall runoff models to determine the probability of inflows to the reservoir for use in Reclamation's dam safety risk analyses.

  9. Comparative Study on Interface Elements, Thin-Layer Elements, and Contact Analysis Methods in the Analysis of High Concrete-Faced Rockfill Dams

    Directory of Open Access Journals (Sweden)

    Xiao-xiang Qian

    2013-01-01

    Full Text Available This paper presents a study on the numerical performance of three contact simulation methods, namely, the interface element, thin-layer element, and contact analysis methods, through the analysis of the contact behavior between the concrete face slab and the dam body of a high concrete-faced rockfill dam named Tianshengqiao-I in China. To investigate the accuracy and limitations of each method, the simulation results are compared in terms of the dam deformation, contact stress along the interface, stresses in the concrete face slab, and separation of the concrete face slab from the cushion layer. In particular, the predicted dam deformation and slab separation are compared with the in-situ observation data to classify these methods according to their agreement with the in-situ observations. It is revealed that the interface element and thin-layer element methods have their limitations in predicting contact stress, slab separation, and stresses in the concrete face slab if a large slip occurs. The contact analysis method seems to be the best choice whether the separation is finite or not.

  10. On the response of large dams to incoherent seismic excitation

    International Nuclear Information System (INIS)

    Ramadan, O.; Novak, M.

    1993-01-01

    An intensive parametric study was conducted to investigate the response of concrete gravity dams to horizontal, spatially variable seismic ground motions. Both segmented dams consisting of separate blocks, or monoliths, and continuous monolithic dams are considered. The study includes the effects of various parameters on system natural frequencies, vibration modes, modal displacement ratios, as well as dam displacements and internal stresses due to spatially variable ground motions. The dam analytical model, and dam response to incoherent ground motions are described. The results show that the dam vibrates almost as a rigid body under the fully correlated waves, but bends and twists significantly under the spatially correlated motions. Dam-foundation interaction magnifies the low frequency components of the dam response, more so for a full reservoir, but decreases the high frequency components. For long dams, the effects of spatially incoherent ground motions are qualitatively different and can be much greater than those due to surface travelling waves. 3 refs., 3 figs

  11. Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

    Science.gov (United States)

    Madan, Jaya; Chaujar, Rishu

    2016-12-01

    The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

  12. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  13. Ultimate Scaling of HighGate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    Directory of Open Access Journals (Sweden)

    Takashi Ando

    2012-03-01

    Full Text Available Current status and challenges of aggressive equivalent-oxide-thickness (EOT scaling of highgate dielectrics via higher-κ ( > 20 materials and interfacial layer (IL scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm, but with effective workfunction (EWF values suitable only for n-type field-effect-transistor (FET. Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.

  14. Renal Development and Blood Pressure in Offspring from Dams Submitted to High-Sodium Intake during Pregnancy and Lactation

    Directory of Open Access Journals (Sweden)

    Terezila M. Coimbra

    2012-01-01

    Full Text Available Exposure to an adverse environment in utero appears to programme physiology and metabolism permanently, with long-term consequences for health of the fetus or offspring. It was observed that the offspring from dams submitted to high-sodium intake during pregnancy present disturbances in renal development and in blood pressure. These alterations were associated with lower plasma levels of angiotensin II (AII and changes in renal AII receptor I (AT1 and mitogen-activated protein kinase (MAPK expressions during post natal kidney development. Clinical and experimental evidence show that the renin-angiotensin system (RAS participates in renal development. Many effects of AII are mediated through MAPK pathways. Extracellular signal-regulated protein kinases (ERKs play a pivotal role in cellular proliferation and differentiation. In conclusion, high-sodium intake during pregnancy and lactation can provoke disturbances in renal development in offspring leading to functional and structural alterations that persist in adult life. These changes can be related at least in part with the decrease in RAS activity considering that this system has an important role in renal development.

  15. High performance ZIF-8/6FDA-DAM mixed matrix membrane for propylene/propane separations

    KAUST Repository

    Zhang, Chen

    2012-02-01

    We report significantly enhanced propylene/propane (C 3H 6/C 3H 8) selectivity in mixed matrix membranes fabricated using 6FDA-DAM polyimide and a zeolitic imidazolate framework (ZIF-8). Equilibrium isotherms and sorption kinetics of C 3H 6 and C 3H 8 at 35°C were studied on a 200nm commercially available ZIF-8 sample produced by BASF. Mixed matrix dense films were formed with 6FDA-DAM and 200nm BASF ZIF-8 particles. SEM imaging showed generally good adhesion between the ZIF-8 and 6FDA-DAM without the need for surface-treating ZIF-8. Pure gas permeation showed significantly enhanced mixed matrix ZIF-8/6FDA-DAM membrane C 3H 6/C 3H 8 separation performance over the pure 6FDA-DAM membrane performance. A C 3H 6 permeability of 56.2Barrer and C 3H 6/C 3H 8 ideal selectivity of 31.0 was found in ZIF-8/6FDA-DAM mixed matrix membrane with 48.0wt% ZIF-8 loading, which are 258% and 150% higher than the pure 6FDA-DAM membrane, respectively for permeability and selectivity. Permeation properties of C 3H 6 and C 3H 8 in ZIF-8 were back-calculated by the Maxwell model for composite permeability using pure gas permeation data, leading to a C 3H 6 permeability of 277Barrer and C 3H 6/C 3H 8 selectivity of 122. Mixed gas permeation also verified that selectivity enhancements were achievable in mixed gas environment by ZIF-8. © 2011 Elsevier B.V.

  16. High performance ZIF-8/6FDA-DAM mixed matrix membrane for propylene/propane separations

    KAUST Repository

    Zhang, Chen; Dai, Ying; Johnson, Justin R.; Karvan, Oguz; Koros, William J.

    2012-01-01

    We report significantly enhanced propylene/propane (C 3H 6/C 3H 8) selectivity in mixed matrix membranes fabricated using 6FDA-DAM polyimide and a zeolitic imidazolate framework (ZIF-8). Equilibrium isotherms and sorption kinetics of C 3H 6 and C 3H 8 at 35°C were studied on a 200nm commercially available ZIF-8 sample produced by BASF. Mixed matrix dense films were formed with 6FDA-DAM and 200nm BASF ZIF-8 particles. SEM imaging showed generally good adhesion between the ZIF-8 and 6FDA-DAM without the need for surface-treating ZIF-8. Pure gas permeation showed significantly enhanced mixed matrix ZIF-8/6FDA-DAM membrane C 3H 6/C 3H 8 separation performance over the pure 6FDA-DAM membrane performance. A C 3H 6 permeability of 56.2Barrer and C 3H 6/C 3H 8 ideal selectivity of 31.0 was found in ZIF-8/6FDA-DAM mixed matrix membrane with 48.0wt% ZIF-8 loading, which are 258% and 150% higher than the pure 6FDA-DAM membrane, respectively for permeability and selectivity. Permeation properties of C 3H 6 and C 3H 8 in ZIF-8 were back-calculated by the Maxwell model for composite permeability using pure gas permeation data, leading to a C 3H 6 permeability of 277Barrer and C 3H 6/C 3H 8 selectivity of 122. Mixed gas permeation also verified that selectivity enhancements were achievable in mixed gas environment by ZIF-8. © 2011 Elsevier B.V.

  17. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  18. Dams and Levees: Safety Risks

    Science.gov (United States)

    Carter, N. T.

    2017-12-01

    The nation's flood risk is increasing. The condition of U.S. dams and levees contributes to that risk. Dams and levee owners are responsible for the safety, maintenance, and rehabilitation of their facilities. Dams-Of the more than 90,000 dams in the United States, about 4% are federally owned and operated; 96% are owned by state and local governments, public utilities, or private companies. States regulate dams that are not federally owned. The number of high-hazard dams (i.e., dams whose failure would likely result in the loss of human life) has increased in the past decade. Roughly 1,780 state-regulated, high-hazard facilities with structural ratings of poor or unsatisfactory need rehabilitation. Levees-There are approximately 100,000 miles of levees in the nation; most levees are owned and maintained by municipalities and agricultural districts. Few states have levee safety programs. The U.S. Army Corps of Engineers (Corps) inspects 15,000 miles of levees, including levees that it owns and local levees participating in a federal program to assist with certain post-flood repairs. Information is limited on how regularly other levees are inspected. The consequence of a breach or failure is another aspect of risk. State and local governments have significant authority over land use and development, which can shape the social and economic impacts of a breach or failure; they also lead on emergency planning and related outreach. To date, federal dam and levee safety efforts have consisted primarily of (1) support for state dam safety standards and programs, (2) investments at federally owned dams and levees, and (3) since 2007, creation of a national levee database and enhanced efforts and procedures for Corps levee inspections and assessments. In Public Law 113-121, enacted in 2014, Congress (1) directed the Corps to develop voluntary guidelines for levee safety and an associated hazard potential classification system for levees, and (2) authorized support for the

  19. The Effects of Dams on Downstream Channel Characteristics in Pennsylvania and Maryland: Assessing the Potential Consequences of Dam Removal

    Science.gov (United States)

    Skalak, K. J.; Pizzuto, J. E.; Jenkins, P.

    2003-12-01

    The potential downstream effects of dam removal were assessed on fifteen sites of varying dam size and characteristics in Pennsylvania and Maryland. The dams ranged in size from a 30 cm high fish weir to a water supply dam 57 m high. Stream order ranged from 1 to 4. The dams are located in watersheds with varying degrees of human disturbance and urbanization. The dams are also operated differently, with significant consequences for hydraulic residence time and downstream flow variability. Most streams were alluvial, but 6 of the reaches were clearly bedrock channels. We hypothesize that the channel upstream, which is unaffected by the dam, will provide an accurate model for the channel downstream of the dam long after dam removal. Therefore, reaches upstream and downstream of the dam were compared to determine the effects of the dam as well as the condition of the stream that will ultimately develop decades after dam removal. Surprisingly, the dams had no consistent influence on channel morphology. However, the percentage of sand is significantly lower downstream than upstream: the mean % sand downstream is 11.47%, while the mean % sand upstream is 21.39%. The coarser fractions of the bed, as represented by the 84th percentile grain diameter, are unaffected by the presence of the dam. These results imply that decades after dam removal, the percentage of sand on the bed will increase, but the coarse fraction of the bed will remain relatively unchanged.

  20. Facile fabrication of highly controllable gating systems based on the combination of inverse opal structure and dynamic covalent chemistry.

    Science.gov (United States)

    Wang, Chen; Yang, Haowei; Tian, Li; Wang, Shiqiang; Gao, Ning; Zhang, Wanlin; Wang, Peng; Yin, Xianpeng; Li, Guangtao

    2017-06-01

    A three-dimensional (3D) inverse opal with periodic and porous structures has shown great potential for applications not only in optics and optoelectronics, but also in functional membranes. In this work, the benzaldehyde group was initially introduced into a 3D nanoporous inverse opal, serving as a platform for fabricating functional membranes. By employing the dynamic covalent approach, a highly controllable gating system was facilely fabricated to achieve modulable and reversible transport features. It was found that the physical/chemical properties and pore size of the gating system could easily be regulated through post-modification with amines. As a demonstration, the gated nanopores were modified with three kinds of amines to control the wettability, surface charge and nanopore size which in turn was exploited to achieve selective mass transport, including hydrophobic molecules, cations and anions, and the transport with respect to the physical steric hindrance. In particular, the gating system showed extraordinary reversibility and could recover to its pristine state by simply changing pH values. Due to the unlimited variety provided by the Schiff base reaction, the inverse opal described here exhibits a significant extendibility and could be easily post-modified with stimuli-responsive molecules for special purposes. Furthermore, this work can be extended to employ other dynamic covalent routes, for example Diels-Alder, ester exchange and disulfide exchange-based routes.

  1. HiGate (High Grade Anti-Tamper Equipment Prototype and Application to e-Discovery

    Directory of Open Access Journals (Sweden)

    Yui Sakurai

    2010-06-01

    Full Text Available These days, most data is digitized and processed in various ways by computers. In the past, computer owners were free to process data as desired and to observe the inputted data as well as the interim results. However, the unrestricted processing of data and accessing of interim results even by computer users is associated with an increasing number of adverse events. These adverse events often occur when sensitive data such as personal or confidential business information must be handled by two or more parties, such as in the case of e-Discovery, used in legal proceedings, or epidemiologic studies. To solve this problem, providers encrypt data, and the owner of the computer performs decoding in the memory for encrypted data. The computer owner can be limited to performing only certain processing of data and to observing only the final results. As an implementation that uses existing technology to realize this solution, the processing of data contained in a smart card was considered, but such an implementation would not be practical due to issues related to computer capacity and processing speed. Accordingly, the authors present the concept of PC-based High Grade Anti-Tamper Equipment (HiGATE, which allows data to be handled without revealing the data content to administrators or users. To verify this concept, an e-Discovery application on a prototype was executed and the results are reported here.

  2. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    Science.gov (United States)

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  3. Robustness of high-fidelity Rydberg gates with single-site addressability

    Science.gov (United States)

    Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

    2014-09-01

    Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

  4. High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

    Science.gov (United States)

    Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

    2016-08-05

    We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

  5. Gated field-emitter cathodes for high-power microwave applications

    International Nuclear Information System (INIS)

    Barasch, E.F.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1992-01-01

    Gated field-emitter cathodes have been fabricated on silicon wafers. Two fabrication approaches have been employed: a knife-edge array and a porous silicon structure. The knife-edge array consists of a pattern of knife-edges, sharpened to ∼200 A radius, configured with an insulated metal gate structure at a gap of ∼500 A. The porous silicon cathode consists of an insulating porous layer, containing pores of ∼50 A diameter, densely spaced in the native silicon, biased for field emission by a thin gate metallization on the surface. Emission current density of 20 A/cm 2 has been obtained with only 10 V bias. Fabrication processes and test results are presented. (Author) 4 figs., tab., 12 refs

  6. Three Sisters Dam modifications and performance

    Energy Technology Data Exchange (ETDEWEB)

    Courage, L.J.R. [Monenco AGRA Inc., Calgary, AB (Canada)

    1995-12-31

    Recent modifications and maintenance carried out at the Three Sisters Dam, in the Alberta Rockies south of the town of Canmore, were described. A detailed account was given of the dam`s geological setting, its abnormally high leakage through the foundation and its sinkhole activity. Results of studies aimed at finding the cause of leakage and sinkhole occurrences were reviewed. Modifications made to the dam since 1951 were detailed, as were modifications to handle probable maximum flood levels. Three approaches for estimating failure probabilities after identification of failure modes were described. The overall conclusion was that based on constant leakage, no settlement in the dam, penstocks, or the powerhouse since construction, the Three Sisters Dam was stable. 1 ref.

  7. Alpine dams

    Directory of Open Access Journals (Sweden)

    Alain Marnezy

    2009-03-01

    Full Text Available Les barrages-réservoirs de montagne ont été réalisés initialement dans les Alpes pour répondre à la demande d’énergie en période hivernale. Une certaine diversification des usages de l’eau s’est ensuite progressivement développée, en relation avec le développement touristique des collectivités locales. Aujourd’hui, la participation des ouvrages d’Électricité De France à la production de neige de culture représente une nouvelle étape. Dans les régions où les aménagements hydroélectriques sont nombreux, les besoins en eau pour la production de neige peuvent être résolus par prélèvements à partir des adductions EDF. Les gestionnaires de stations échappent ainsi aux inconvénients liés à la construction et à la gestion des « retenues collinaires ». Cette évolution, qui concerne déjà quelques régions alpines comme la haute Maurienne ou le Beaufortin, apparaît comme une forme renouvelée d’intégration territoriale de la ressource en eau.Mountain reservoirs were initially built in the Alps to meet energy needs in the winter. A certain diversification in the uses of water then gradually developed, related to tourism development in the local communities. Today, the use of facilities belonging to EDF (French Electricity Authority to provide water for winter resorts to make artificial snow represents a new phase. By taking water from EDF resources to supply snow-making equipment, resort managers are thus able to avoid the problems related to the construction and management of small headwater dams. This new orientation in the use of mountain water resources already affects a number of alpine regions such as the Upper Maurienne valley and Beaufortain massif and represents a renewed form of the territorial integration of water resources.

  8. Effects of Si3N4 passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures

    International Nuclear Information System (INIS)

    Oh, J H; Han, M; Baek, Y H; Moon, S W; Rhee, J K; Kim, S D

    2009-01-01

    Effects of the Si 3 N 4 passivation on the dc and RF characteristics of a 0.1 µm metamorphic high-electron-mobility transistor (HEMT) are investigated for narrow and wide gate-recess structures. Maximum drain-source saturation current (I dss,max ) and maximum extrinsic transconductance (g m,max ) are reduced by ∼14.8 and ∼11.6%, respectively, in the wide gate-recess structure after the passivation; on the other hand, only ∼5.7 and ∼4.9% reductions are measured from I dss,max and g m,max , respectively, in the narrow gate-recess structure. We examine the passivation-induced degradation by using a modified charge control model assuming the charged surface states on the Si 3 N 4 interface and a comparative study of the hydrodynamic device simulation with the experimental measurement. From the analysis, it is proposed that the difference of degradation in two different gate structures is due to an approximately three times higher charged surface state density of ∼4.5 × 10 11 cm −2 in the wide gate-recess structure than ∼1.6 × 10 11 cm −2 in the narrow gate-recess structure. The cut-off frequency (f T ) of the wide gate-recess structure also exhibits a greater reduction of ∼14.5%, while the f T of the narrow gate-recess structure is reduced by only ∼6.6% after the passivation. This is mainly due to the passivation-induced surface states of a higher density in the wide gate-recess structure. A great increase of the gate-to-drain parasitic capacitance in the wide gate-recess structure makes a major contribution to ∼13.5% degradation of the maximum frequency of oscillation

  9. [Limnetic zooplankton run-off a high-head dam and their fate in a river with high current velocity (case of the Krasnoiarsk hydroelectric power station on the Yenisei river].

    Science.gov (United States)

    Dubovskaia, O P; Gladyshev, M I; Makhutova, O N

    2004-01-01

    The vertical distribution of net zooplankton in head-water of Krasnoyarsk hydroelectric power station and its horizontal distribution in the tail-water were studied during two years in winter and summer seasons. In order to distinguish living and dead individuals the special staining was used. It was revealed that on average 77% of living plankton pass through high-head dam with deep water scoop to the tailwater. While passing through dam aggregates some individuals of the reservoir plankton are traumatized and die, that results in some increase of portion of dead individuals in the tail water near dam (from 3 to 6%). Alive zooplankton passed through the dam aggregates is eliminated under the Upper Yenisei highly turbulent conditions. There is approximately 10% of it in 32 km from the dam if compare with biomass in 20-40 m layer of reservoir, the portion of dead increases to 11%. The biomass of zooplankton suspended in the water column of the tail-water sometimes increases (till > 1 g/m3) due to large Copepoda Heteroscope borealis, which inhabits near-bottom and near-shore river zones and can be found in the central part of the river during reproductive period. Limnetic zooplankton from the reservoir cannot be considered as important food for planktivores in the tail-water.

  10. Sensitivity Analysis of Temperature Control Parameters and Study of the Simultaneous Cooling Zone during Dam Construction in High-Altitude Regions

    Directory of Open Access Journals (Sweden)

    Zhenhong Wang

    2015-01-01

    Full Text Available There are unprecedented difficulties in building concrete gravity dams in the high altitude province Tibet with problems induced by lack of experience and technologies and unique weather conditions, as well as the adoption of construction materials that are disadvantageous to temperature control and crack prevention. Based on the understandings of the mentioned problems and leveraging the need of building gravity dam in Tibet, 3D finite element method is used to study the temperature control and crack prevention of the dam during construction. The calculation under recommend temperature control measures and standards shows that the height and number of simultaneous cooling zone have the more obvious influencers on concrete stress; therefore, it is suggested to increase the height of simultaneous cooling zone to decrease the stress caused by temperature gradient of adjoin layers so as to raise the safety level of the whole project. The research methods and ideas used on this project have significant values and can be taken as references in similar projects in high altitude regions.

  11. Construction of anhydrite dams

    Energy Technology Data Exchange (ETDEWEB)

    Bortoluzzi, L; Francois, G

    1977-05-01

    To construct a ventilation dam, the road is closed with a fibreglass sheet onto which 3 or 4 cm of anhydrite paste is sprayed. The equipment necessary is described, and the cost is compared with that of an aggregate dam.

  12. Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

    2012-07-01

    We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

  13. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

    2016-01-01

    shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

  14. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

    Science.gov (United States)

    Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

    2015-06-01

    High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

  15. The Total Risk Analysis of Large Dams under Flood Hazards

    Directory of Open Access Journals (Sweden)

    Yu Chen

    2018-02-01

    Full Text Available Dams and reservoirs are useful systems in water conservancy projects; however, they also pose a high-risk potential for large downstream areas. Flood, as the driving force of dam overtopping, is the main cause of dam failure. Dam floods and their risks are of interest to researchers and managers. In hydraulic engineering, there is a growing tendency to evaluate dam flood risk based on statistical and probabilistic methods that are unsuitable for the situations with rare historical data or low flood probability, so a more reasonable dam flood risk analysis method with fewer application restrictions is needed. Therefore, different from previous studies, this study develops a flood risk analysis method for large dams based on the concept of total risk factor (TRF used initially in dam seismic risk analysis. The proposed method is not affected by the adequacy of historical data or the low probability of flood and is capable of analyzing the dam structure influence, the flood vulnerability of the dam site, and downstream risk as well as estimating the TRF of each dam and assigning corresponding risk classes to each dam. Application to large dams in the Dadu River Basin, Southwestern China, demonstrates that the proposed method provides quick risk estimation and comparison, which can help local management officials perform more detailed dam safety evaluations for useful risk management information.

  16. Dam removal: Listening in

    Science.gov (United States)

    Foley, M. M.; Bellmore, J. R.; O'Connor, J. E.; Duda, J. J.; East, A. E.; Grant, G. E.; Anderson, C. W.; Bountry, J. A.; Collins, M. J.; Connolly, P. J.; Craig, L. S.; Evans, J. E.; Greene, S. L.; Magilligan, F. J.; Magirl, C. S.; Major, J. J.; Pess, G. R.; Randle, T. J.; Shafroth, P. B.; Torgersen, C. E.; Tullos, D.; Wilcox, A. C.

    2017-07-01

    Dam removal is widely used as an approach for river restoration in the United States. The increase in dam removals—particularly large dams—and associated dam-removal studies over the last few decades motivated a working group at the USGS John Wesley Powell Center for Analysis and Synthesis to review and synthesize available studies of dam removals and their findings. Based on dam removals thus far, some general conclusions have emerged: (1) physical responses are typically fast, with the rate of sediment erosion largely dependent on sediment characteristics and dam-removal strategy; (2) ecological responses to dam removal differ among the affected upstream, downstream, and reservoir reaches; (3) dam removal tends to quickly reestablish connectivity, restoring the movement of material and organisms between upstream and downstream river reaches; (4) geographic context, river history, and land use significantly influence river restoration trajectories and recovery potential because they control broader physical and ecological processes and conditions; and (5) quantitative modeling capability is improving, particularly for physical and broad-scale ecological effects, and gives managers information needed to understand and predict long-term effects of dam removal on riverine ecosystems. Although these studies collectively enhance our understanding of how riverine ecosystems respond to dam removal, knowledge gaps remain because most studies have been short (< 5 years) and do not adequately represent the diversity of dam types, watershed conditions, and dam-removal methods in the U.S.

  17. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  18. Temperature-sensitive gating of hCx26: high-resolution Raman spectroscopy sheds light on conformational changes.

    Science.gov (United States)

    Kniggendorf, Ann-Kathrin; Meinhardt-Wollweber, Merve; Yuan, Xiaogang; Roth, Bernhard; Seifert, Astrid; Fertig, Niels; Zeilinger, Carsten

    2014-07-01

    The temperature-sensitive gating of human Connexin 26 (hCx26) was analyzed with confocal Raman microscopy. High-resolution Raman spectra covering the spectral range between 400 and 1500 rel. cm(-1) with a spectral resolution of 1 cm(-1) were fully annotated, revealing notable differences between the spectrum recorded from solubilized hCx26 in Ca(2+)-buffered POPC at 10°C and any other set of protein conditions (temperature, Ca(2+) presence, POPC presence). Spectral components originating from specific amino acids show that the TM1/EL1 parahelix and probably the TM4 trans-membrane helix and the plug domain are involved in the gating process responsible for fully closing the hemichannel.

  19. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  20. Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

    Science.gov (United States)

    Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

    2018-03-01

    The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

  1. Modeling the capacity of riverscapes to support beaver dams

    Science.gov (United States)

    Macfarlane, William W.; Wheaton, Joseph M.; Bouwes, Nicolaas; Jensen, Martha L.; Gilbert, Jordan T.; Hough-Snee, Nate; Shivik, John A.

    2017-01-01

    The construction of beaver dams facilitates a suite of hydrologic, hydraulic, geomorphic, and ecological feedbacks that increase stream complexity and channel-floodplain connectivity that benefit aquatic and terrestrial biota. Depending on where beaver build dams within a drainage network, they impact lateral and longitudinal connectivity by introducing roughness elements that fundamentally change the timing, delivery, and storage of water, sediment, nutrients, and organic matter. While the local effects of beaver dams on streams are well understood, broader coverage network models that predict where beaver dams can be built and highlight their impacts on connectivity across diverse drainage networks are lacking. Here we present a capacity model to assess the limits of riverscapes to support dam-building activities by beaver across physiographically diverse landscapes. We estimated dam capacity with freely and nationally-available inputs to evaluate seven lines of evidence: (1) reliable water source, (2) riparian vegetation conducive to foraging and dam building, (3) vegetation within 100 m of edge of stream to support expansion of dam complexes and maintain large colonies, (4) likelihood that channel-spanning dams could be built during low flows, (5) the likelihood that a beaver dam is likely to withstand typical floods, (6) a suitable stream gradient that is neither too low to limit dam density nor too high to preclude the building or persistence of dams, and (7) a suitable river that is not too large to restrict dam building or persistence. Fuzzy inference systems were used to combine these controlling factors in a framework that explicitly also accounts for model uncertainty. The model was run for 40,561 km of streams in Utah, USA, and portions of surrounding states, predicting an overall network capacity of 356,294 dams at an average capacity of 8.8 dams/km. We validated model performance using 2852 observed dams across 1947 km of streams. The model showed

  2. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    Science.gov (United States)

    Nagaiah, Padmaja

    As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

  3. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  4. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  5. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Li, Jia-dong; Cheng, Jun-jie; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Zhang, Jin-cheng; Zhang, Zhi-qiang; Wu, Dong-min

    2014-07-01

    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening.

  6. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Li, Jia-dong; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Wu, Dong-min; Cheng, Jun-jie; Zhang, Jin-cheng; Zhang, Zhi-qiang

    2014-01-01

    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening. (paper)

  7. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  8. Optimization of a retrospective technique for respiratory-gated high speed micro-CT of free-breathing rodents

    International Nuclear Information System (INIS)

    Ford, Nancy L; Wheatley, Andrew R; Holdsworth, David W; Drangova, Maria

    2007-01-01

    The objective of this study was to develop a technique for dynamic respiratory imaging using retrospectively gated high-speed micro-CT imaging of free-breathing mice. Free-breathing C57Bl6 mice were scanned using a dynamic micro-CT scanner, comprising a flat-panel detector mounted on a slip-ring gantry. Projection images were acquired over ten complete gantry rotations in 50 s, while monitoring the respiratory motion in synchrony with projection-image acquisition. Projection images belonging to a selected respiratory phase were retrospectively identified and used for 3D reconstruction. The effect of using fewer gantry rotations-which influences both image quality and the ability to quantify respiratory function-was evaluated. Images reconstructed using unique projections from six or more gantry rotations produced acceptable images for quantitative analysis of lung volume, CT density, functional residual capacity and tidal volume. The functional residual capacity (0.15 ± 0.03 mL) and tidal volumes (0.08 ± 0.03 mL) measured in this study agree with previously reported measurements made using prospectively gated micro-CT and at higher resolution (150 μm versus 90 μm voxel spacing). Retrospectively gated micro-CT imaging of free-breathing mice enables quantitative dynamic measurement of morphological and functional parameters in the mouse models of respiratory disease, with scan times as short as 30 s, based on the acquisition of projection images over six gantry rotations

  9. Optimization of a retrospective technique for respiratory-gated high speed micro-CT of free-breathing rodents

    Energy Technology Data Exchange (ETDEWEB)

    Ford, Nancy L [Department of Physics, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3 (Canada); Wheatley, Andrew R [Imaging Research Laboratories, Robarts Research Institute, 100 Perth Drive, PO Box 5015, London, Ontario N6A 5K8 (Canada); Holdsworth, David W [Imaging Research Laboratories, Robarts Research Institute, 100 Perth Drive, PO Box 5015, London, Ontario N6A 5K8 (Canada); Drangova, Maria [Imaging Research Laboratories, Robarts Research Institute, 100 Perth Drive, PO Box 5015, London, Ontario N6A 5K8 (Canada)

    2007-09-21

    The objective of this study was to develop a technique for dynamic respiratory imaging using retrospectively gated high-speed micro-CT imaging of free-breathing mice. Free-breathing C57Bl6 mice were scanned using a dynamic micro-CT scanner, comprising a flat-panel detector mounted on a slip-ring gantry. Projection images were acquired over ten complete gantry rotations in 50 s, while monitoring the respiratory motion in synchrony with projection-image acquisition. Projection images belonging to a selected respiratory phase were retrospectively identified and used for 3D reconstruction. The effect of using fewer gantry rotations-which influences both image quality and the ability to quantify respiratory function-was evaluated. Images reconstructed using unique projections from six or more gantry rotations produced acceptable images for quantitative analysis of lung volume, CT density, functional residual capacity and tidal volume. The functional residual capacity (0.15 {+-} 0.03 mL) and tidal volumes (0.08 {+-} 0.03 mL) measured in this study agree with previously reported measurements made using prospectively gated micro-CT and at higher resolution (150 {mu}m versus 90 {mu}m voxel spacing). Retrospectively gated micro-CT imaging of free-breathing mice enables quantitative dynamic measurement of morphological and functional parameters in the mouse models of respiratory disease, with scan times as short as 30 s, based on the acquisition of projection images over six gantry rotations.

  10. Mechanics of slide dams

    International Nuclear Information System (INIS)

    Young, G.A.

    1970-01-01

    Studies which promote the use of nuclear energy for peaceful projects in engineering are sponsored by the Atomic Energy Commission under the Plowshare program. Specific projects being considered include the construction of harbors, canals, and dams. Of these projects, perhaps the most difficult to accomplish will be the latter. This paper which is in two parts considers the problems which are associated with the construction of slide dams with nuclear explosives. It examines first the characteristics of conventional earth and rock-fill dams which are based upon proven techniques developed after many years of experience. The characteristics of natural landslide dams are also briefly considered to identify potential problems that must be overcome by slide dam construction techniques. Second, the mechanics of slide dams as determined from small-scale laboratory studies are presented. It is concluded that slide dams can be constructed and that small-scale field tests and additional laboratory studies are justified. (author)

  11. Mechanics of slide dams

    Energy Technology Data Exchange (ETDEWEB)

    Young, G A [Engineering, Agbabian-Jacobsen Associates, Los Angeles (United States)

    1970-05-15

    Studies which promote the use of nuclear energy for peaceful projects in engineering are sponsored by the Atomic Energy Commission under the Plowshare program. Specific projects being considered include the construction of harbors, canals, and dams. Of these projects, perhaps the most difficult to accomplish will be the latter. This paper which is in two parts considers the problems which are associated with the construction of slide dams with nuclear explosives. It examines first the characteristics of conventional earth and rock-fill dams which are based upon proven techniques developed after many years of experience. The characteristics of natural landslide dams are also briefly considered to identify potential problems that must be overcome by slide dam construction techniques. Second, the mechanics of slide dams as determined from small-scale laboratory studies are presented. It is concluded that slide dams can be constructed and that small-scale field tests and additional laboratory studies are justified. (author)

  12. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  13. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  14. Hydroacoustic Evaluation of Juvenile Salmonid Passage at The Dalles Dam Sluiceway, 2005

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Gary E.; Khan, Fenton; Hedgepeth, J; Mueller, Robert P.; Rakowski, Cynthia L.; Richmond, Marshall C.; Serkowski, John A.; Skalski, John R.

    2006-06-01

    The U.S. Army Corps of Engineers Portland District engaged the Pacific Northwest National Laboratory to evaluate fish passage at The Dalles Dam powerhouse in 2005. The goal of the study was to provide information on smolt passage that will inform decisions on long-term measures and operations to enhance sluiceway passage and reduce turbine passage to improve smolt survival at the dam. The study addressed one of the main programs dedicated to improving juvenile salmonid survival at The Dalles Dam: Surface Flow Bypass. The study objectives (see below) were met using a combination of hydroacoustic and hydraulic data. The study incorporated fixed-location hydroacoustic methods across the entire powerhouse, with especially intense sampling using multiple split-beam transducers at all sluiceway portals. We did not sample fish passage at the spillway in 2005. In the sluiceway nearfield, we used an acoustic camera to track fish movements. The fish data were interpreted with hydraulic data from a computational fluid dynamics (CFD) model. Fish passage data were collected in the framework of an “experiment” using a randomized block design (3-day treatments; two treatments) to compare two sluiceway operational configurations: Sluice 2+5 and Sluice 2+19 (six gates open for each configuration). Total project outflow was 76% of the 10-year average for spring and 71% of the 10-year average for summer. Based on these findings, we make the following recommendations: 1) The sluice should be operated 24 h/d from April until November. 2) Open six rather than three sluice gates to take advantage of the maximum hydraulic capacity of the sluiceway. 3) Open the three gates above the western-most operating main turbine unit and the three gates at MU 8 where turbine passage rates are relatively high. 4) Operate the turbine units below open sluice gates as a standard fish operations procedure. 5) Develop hydraulic and entrance enhancements to the sluiceway to tap the potential of The

  15. Tailings dams from the perspective of conventional dam engineering

    International Nuclear Information System (INIS)

    Szymanski, M.B.

    1999-01-01

    A guideline intended for conventional dams such as hydroelectric, water supply, flood control, or irrigation is used sometimes for evaluating the safety of a tailings dam. Differences between tailings dams and conventional dams are often substantial and, as such, should not be overlooked when applying the techniques or safety requirements of conventional dam engineering to tailings dams. Having a dam safety evaluation program developed specifically for tailings dams is essential, if only to reduce the chance of potential errors or omissions that might occur when relying on conventional dam engineering practice. This is not to deny the merits of using the Canadian Dam Safety Association Guidelines (CDSA) and similar conventional dam guidelines for evaluating the safety of tailings dams. Rather it is intended as a warning, and as a rationale underlying basic requirement of tailings dam emgineering: specific experience in tailings dams is essential when applying conventional dam engineering practice. A discussion is included that focuses on the more remarkable tailings dam safety practics. It is not addressed to a technical publications intended for such dams, or significantly different so that the use of conventional dam engineering practice would not be appropriate. The CDSA Guidelines were recently revised to include tailings dams. But incorporating tailings dams into the 1999 revision of the CDSA Guidelines is a first step only - further revision is necessary with respect to tailings dams. 11 refs., 2 tabs

  16. Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

    Science.gov (United States)

    Zamani, Davoud

    ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources

  17. The Grand Ethiopian Renaissance Dam and Ethiopia's Succession ...

    African Journals Online (AJOL)

    Tadesse Kassa Woldetsadik

    2013-06-01

    Jun 1, 2013 ... Dam concessions engendered detrimental impacts on Ethiopia's riparian rights ... control works on the Aswan High and the Roseires dams. Disturbed by the ... hegemonic control that would inevitably ensue from construction of the Dam ...... Projects Implementation Division AAAID, Sudan, p.1. 39 Ibid.

  18. National dam inventory provides data for analysis

    International Nuclear Information System (INIS)

    Spragens, L.

    1992-01-01

    The Association of State Dam Safety Officials completed a dam inventory this fall. Information on approximately 90,000 state-regulated dams in the US collected during the four-year inventory is being used to build a database managed by the Federal Emergency Management Agency. In addition to ASDSO's work, the federal government conducted an inventory of federal dams. This data will be added to the state information to form one national database. The database will feature 35 data fields for each entry, including the name of the dam, its size, the name of the nearest downstream community, maximum discharge and storage volume, the date of the last inspection, and details about the emergency action plan. The program is an update of the nation's first dam inventory, required by the Dam Safety Act of 1972. The US Army Corps of Engineers completed the original inventory in 1981. The Water Resources Development Act of 1986 authorized appropriations of $2.5 million for the Corps to update the inventory. FEMA and the Corps entered into an agreement for FEMA to undertake the task for the Corps and to coordinate work on both the federal and state inventories. ASDSO compiles existing information on state-regulated dams into a common format for the database, added missing information, and established a process for continually updating data. ASDSO plans to analyze the information collected for the database. It will look at statistics for the number of dams regulated, communities that could be affected, and the number of high-hazard dams. FEMA is preparing reports for Congress on the project. The reports, which are expected to be ready by May 1993, will include information on the methodology used and facts about regulated dams under state jurisdiction

  19. Public safety around dams

    Energy Technology Data Exchange (ETDEWEB)

    Bourassa, H [Centre d' expertise hydrique du Quebec, Quebec, PQ (Canada)

    2009-07-01

    Fourty public dams are managed on a real-time basis by the Centre d'expertise hydrique du Quebec (CEHQ). This presentation described the public dams owned by the CEHQ and discussed the public safety measures at the dams. The dams serve various purposes, including protection against floods; industrial or drinking water supply; resort or recreational activities; hydroelectric development; and wildlife conservation. Trigger events were also discussed, such as the complaint at Rapides-des-Cedres dam and deaths that occurred in 2004 when water from a dam was released without warning. Several photographs were presented to illustrate that people were unaware of the danger. Initiatives aimed at raising awareness and studying public safety issues were discussed. A pilot project was launched and a permanent committee was created to evaluate all aspects of public safety at the dams owned by CEHQ. The first tasks of the committee were to establish requirements for waterway safety barriers, both upstream and downstream, for all public dams; to establish requirements for safety signage for all public dams; and to develop criteria to decide on safety signage at each dam. figs.

  20. Public safety around dams

    Energy Technology Data Exchange (ETDEWEB)

    Bourassa, H. [Centre d' expertise hydrique du Quebec, Quebec, PQ (Canada)

    2009-07-01

    Fourty public dams are managed on a real-time basis by the Centre d'expertise hydrique du Quebec (CEHQ). This presentation described the public dams owned by the CEHQ and discussed the public safety measures at the dams. The dams serve various purposes, including protection against floods; industrial or drinking water supply; resort or recreational activities; hydroelectric development; and wildlife conservation. Trigger events were also discussed, such as the complaint at Rapides-des-Cedres dam and deaths that occurred in 2004 when water from a dam was released without warning. Several photographs were presented to illustrate that people were unaware of the danger. Initiatives aimed at raising awareness and studying public safety issues were discussed. A pilot project was launched and a permanent committee was created to evaluate all aspects of public safety at the dams owned by CEHQ. The first tasks of the committee were to establish requirements for waterway safety barriers, both upstream and downstream, for all public dams; to establish requirements for safety signage for all public dams; and to develop criteria to decide on safety signage at each dam. figs.

  1. Prospectively Electrocardiogram-Gated High-Pitch Spiral Acquisition Mode Dual-Source CT Coronary Angiography in Patients with High Heart Rates: Comparison with Retrospective Electrocardiogram-Gated Spiral Acquisition Mode

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Kai; Ma, Rui; Wang, Li Jun [Dept. of Radiology, Baotou Central Hospital, Baotou (China); Li, Li Gang; Chen, Jiu Hong [CT BM Clinic Marketing, Siemens Healthcare, Beijing (China)

    2012-11-15

    To assess the image quality and effective radiation dose of prospectively electrocardiogram (ECG)-gated high-pitch spiral acquisition mode (flash mode) of dual-source CT (DSCT) coronary angiography (CTCA) in patients with high heart rates (HRs) as compared with retrospectively ECG-gated spiral acquisition mode. Two hundred and sixty-eight consecutive patients (132 female, mean age: 55 {+-} 11 years) with mean HR > 65 beats per minute (bpm) were prospectively included in this study. The patients were divided into two groups. Collection was performed in group A CTCA using flash mode setting at 20-30% of the R-R interval, and retrospectively ECG-gated spiral acquisition mode in group B. The image noise, contrast-to-noise ratio (CNR), image quality scores, effective radiation dose and influencing factors on image quality between the two groups were assessed. There were no significant differences in image quality scores and proportions of non-diagnostic coronary artery segments between two groups (image quality scores: 1.064 {+-} 0.306 [group A] vs. 1.084 {+-} 0.327 [group B], p = 0.063; proportion of non-diagnostic coronary artery segments: segment-based analysis 1.52% (group A) vs. 1.74% (group B), p = 0.345; patient-based analysis 7.5% (group A) vs. 6.7% (group B), p = 0.812). The estimated radiation dose was 1.0 {+-} 0.16 mSv in group A and 7.1 {+-} 1.05 mSv in group B (p = 0.001). In conclusion, in patients with HRs > 65 bpm without cardiac arrhythmia, the prospectively high-pitch spiral-acquisition mode with image-acquired timing set at 20-30% of the R-R interval provides a similar image quality and low rate of non-diagnostic coronary segments to the retrospectively ECG-gated low-pitch spiral acquisition mode, with significant reduction of radiation exposure.

  2. Prospectively Electrocardiogram-Gated High-Pitch Spiral Acquisition Mode Dual-Source CT Coronary Angiography in Patients with High Heart Rates: Comparison with Retrospective Electrocardiogram-Gated Spiral Acquisition Mode

    International Nuclear Information System (INIS)

    Sun, Kai; Ma, Rui; Wang, Li Jun; Li, Li Gang; Chen, Jiu Hong

    2012-01-01

    To assess the image quality and effective radiation dose of prospectively electrocardiogram (ECG)-gated high-pitch spiral acquisition mode (flash mode) of dual-source CT (DSCT) coronary angiography (CTCA) in patients with high heart rates (HRs) as compared with retrospectively ECG-gated spiral acquisition mode. Two hundred and sixty-eight consecutive patients (132 female, mean age: 55 ± 11 years) with mean HR > 65 beats per minute (bpm) were prospectively included in this study. The patients were divided into two groups. Collection was performed in group A CTCA using flash mode setting at 20-30% of the R-R interval, and retrospectively ECG-gated spiral acquisition mode in group B. The image noise, contrast-to-noise ratio (CNR), image quality scores, effective radiation dose and influencing factors on image quality between the two groups were assessed. There were no significant differences in image quality scores and proportions of non-diagnostic coronary artery segments between two groups (image quality scores: 1.064 ± 0.306 [group A] vs. 1.084 ± 0.327 [group B], p = 0.063; proportion of non-diagnostic coronary artery segments: segment-based analysis 1.52% (group A) vs. 1.74% (group B), p = 0.345; patient-based analysis 7.5% (group A) vs. 6.7% (group B), p = 0.812). The estimated radiation dose was 1.0 ± 0.16 mSv in group A and 7.1 ± 1.05 mSv in group B (p = 0.001). In conclusion, in patients with HRs > 65 bpm without cardiac arrhythmia, the prospectively high-pitch spiral-acquisition mode with image-acquired timing set at 20-30% of the R-R interval provides a similar image quality and low rate of non-diagnostic coronary segments to the retrospectively ECG-gated low-pitch spiral acquisition mode, with significant reduction of radiation exposure.

  3. Time gating for energy selection and scatter rejection: High-energy pulsed neutron imaging at LANSCE

    Science.gov (United States)

    Swift, Alicia; Schirato, Richard; McKigney, Edward; Hunter, James; Temple, Brian

    2015-09-01

    The Los Alamos Neutron Science Center (LANSCE) is a linear accelerator in Los Alamos, New Mexico that accelerates a proton beam to 800 MeV, which then produces spallation neutron beams. Flight path FP15R uses a tungsten target to generate neutrons of energy ranging from several hundred keV to ~600 MeV. The beam structure has micropulses of sub-ns width and period of 1.784 ns, and macropulses of 625 μs width and frequency of either 50 Hz or 100 Hz. This corresponds to 347 micropulses per macropulse, or 1.74 x 104 micropulses per second when operating at 50 Hz. Using a very fast, cooled ICCD camera (Princeton Instruments PI-Max 4), gated images of various objects were obtained on FP15R in January 2015. Objects imaged included blocks of lead and borated polyethylene; a tungsten sphere; and a tungsten, polyethylene, and steel cylinder. Images were obtained in 36 min or less, with some in as little as 6 min. This is novel because the gate widths (some as narrow as 10 ns) were selected to reject scatter and other signal not of interest (e.g. the gamma flash that precedes the neutron pulse), which has not been demonstrated at energies above 14 MeV. This proof-of-principle experiment shows that time gating is possible above 14MeV and is useful for selecting neutron energy and reducing scatter, thus forming clearer images. Future work (simulation and experimental) is being undertaken to improve camera shielding and system design and to precisely determine optical properties of the imaging system.

  4. Spectroscopic and TDDFT investigation on highly selective fluorogenic chemosensor and construction of molecular logic gates

    Energy Technology Data Exchange (ETDEWEB)

    Basheer, Sabeel M [Department of Chemistry, National Institute of Technology, Tiruchirappalli 620 015 (India); Kumar, Saravana Loganathan Ashok [Department of Chemistry, GRT Institute of Engineering Technology, Tiruttani (India); Kumar, Moorthy Saravana [Research and PG Department of Chemistry, Saraswathi Narayanan College, Madurai 625022 (India); Sreekanth, Anandaram, E-mail: sreekanth@nitt.edu [Department of Chemistry, National Institute of Technology, Tiruchirappalli 620 015 (India)

    2017-03-01

    1,5-Bis(2-fluorene)thiocarbohydrazone (FBTC) was designed and synthesized for selective sensing of fluoride and copper ions. The binding constants of FBTC towards fluoride and copper ions have been calculated using the Benesi-Hildebrand equation, and FBTC has more binding affinity towards copper ion than fluoride ion. The {sup 1}H NMR and {sup 13}C NMR titration studies strongly support the deprotonation was taken from the N–H protons followed by the formation of hydrogen bond via N–H{sup …}F. To understand the fluoride ion sensing mechanism, theoretical investigation had been carried out using the density functional theory and time-dependent density functional theory. The theoretical data well reproduced the experimental results. The deprotonation process has a moderate transition barrier (481.55 kcal/mol). The calculated ΔE and ΔG values (− 253.92 and − 192.41 kcal/mol respectively) suggest the feasibility of sensing process. The potential energy curves give the optimized structures of FBTC-F complex in the ground state and excited state, which states the proton transition occurs at the excited state. The excited state proton transition mechanism was further confirmed with natural bond orbital analysis. The reversibility of the sensor was monitored by the alternate addition of F{sup −} and Cu{sup 2+} ions, which was explained with “Read-Erase-Write-Read” behaviour. The multi-ion detection of sensor used to construct the molecular logic gate, such as AND, OR, NOR and INHIBITION logic gates. - Highlight: • Synthesis and characterised the thiosemicarbohydrazone derivative • Experimental evolution of selective fluoride and copper sensing via both colorimetric and spectroscopic studies • The proposed sensing mechanism of fluoride and copper ion were further confirmed with DFT and TD-DFT investigation • Receptor was turned as molecular switches and molecular logic gates.

  5. A cohesion/tension mechanism explains the gating of water channels (aquaporins) in Chara internodes by high concentration.

    Science.gov (United States)

    Ye, Qing; Wiera, Boguslaw; Steudle, Ernst

    2004-02-01

    Isolated internodes of Chara corallina have been used to study the gating of aquaporins (water channels) in the presence of high concentrations of osmotic solutes of different size (molecular weight). Osmolytes were acetone and three glycol ethers: ethylene glycol monomethyl ether (EGMME), diethylene glycol monomethyl ether (DEGMME), and triethylene glycol monoethyl ether (TEGMEE). The 'osmotic efficiency' of osmolytes was quite different. Their reflection coefficients ranged between 0.15 (acetone), 0.59 (EGMME), 0.78 (DEGMME), and 0.80 (TEGMEE). Bulk water permeability (Lp) and diffusive permeabilities (Ps) of heavy water (HDO), hydrogen peroxide (H2O2), acetone, and glycol ethers (EGMME, DEGMME, and TEGMEE) were measured using a cell pressure probe. Cells were treated with different concentrations of osmotic solutes of up to 800 mM ( approximately 2.0 MPa of osmotic pressure). Inhibition of aquaporin activity increased with both increasing concentration and size of solutes (reflection coefficients). As cell Lp decreased, Ps increased, indicating that water and solutes used different passages across the plasma membrane. Similar to earlier findings of an osmotic gating of ion channels, a cohesion/tension model of the gating of water channels in Chara internodes by high concentration is proposed. According to the model, tensions (negative pressures) within water channels affected the open/closed state by changing the free energy between states and favoured a distorted/collapsed rather than the open state. They should have differed depending on the concentration and size of solutes that are more or less excluded from aquaporins. The bigger the solute, the lower was the concentration required to induce a reversible closure of aquaporins, as predicted by the model.

  6. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    International Nuclear Information System (INIS)

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

  7. High volume tidal or current flow harnessing system

    Energy Technology Data Exchange (ETDEWEB)

    Gorlov, A.M.

    1984-08-07

    Apparatus permitting the utilization of large volumes of water in the harnessing and extracting of a portion of the power generated by the rise and fall of ocean tides, ocean currents, or flowing rivers includes the provision of a dam, and a specialized single cavity chamber of limited size as compared with the water head enclosed by the dam, and an extremely high volume gating system in which all or nearly all of the water between the high and low levels on either side of the dam is cyclically gated through the single chamber from one side of the dam to the other so as to alternately provide positive air pressure and a partial vacuum within the single chamber. In one embodiment, the specialized chamber has a barrier at the bottom which divides the bottom of the chamber in half, large ports at the bottom of the chamber to permit inflow and outflow of high volumes of water, and ganged structures having a higher total area than that of corresponding ports, in which the structures form sluice gates to selectively seal off and open different sets of ports. In another embodiment, a single chamber is used without a barrier. In this embodiment, vertical sluice gates are used which may be activated automatically by pressures acting on the sluice gates as a result of ingested and expelled water.

  8. High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

    Science.gov (United States)

    Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida

    2017-01-01

    High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

  9. Hydroacoustic Evaluation of Juvenile Salmonid Passage at The Dalles Dam in 2004

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Gary E.; Hanks, Michael E.; Khan, Fenton; Cook, Chris B.; Hedgepeth, J; Mueller, Robert P.; Rakowski, Cynthia L.; Richmond, Marshall C.; Sargeant, Susan L.; Serkowski, John A.; Skalski, John R.

    2005-06-01

    The U.S. Army Corps of Engineers Portland District engaged the Pacific Northwest National Laboratory to evaluate juvenile salmon passage at The Dalles Dam in 2004 to inform decisions about long-term measures and operations to enhance sluiceway and spill passage and reduce turbine passage to improve smolt survival at the dam. PNNL used fixed-location hydroacoustic sampling across the entire project, especially at the sluiceway and spillway, using multiple split-beam transducers at selected locations. At the sluiceway nearfield, we used an acoustic camera to track fish. The fish data were interpreted and integrated with hydraulic data from a CFD model and in-field ADCP measurements. Two sluiceway operations were compared: West only (SL 1) vs. West+East (SL 1 + SL 18). Based on our findings, we concluded that The Dalles Dam sluiceway has the potential to be highly efficient and effective at passing juvenile salmonids. This potential could be tapped with hydraulic and entrance enhancements to the sluiceway. We recommended the following: (1) six rather than three sluice gates should be opened to take advantage of the maximum hydraulic capacity of the sluiceway. (2) The turbine units below open sluice gates should be operated as a standard fish operations procedure. (3) In 2005, the Corps and fisheries agencies should consider operating sluice gates in one or more of the following combinations of six gates: (a) SL 1-1, 1-2, 1-3 and SL 18-1, 18-2, 18-3 (repeat 2004 operation), (b) SL 1-1, 1-2, 1-3 and SL 11-1, 11-2, 11-3, or (c) SL 1-1, 1-2, 1-3 and SL 2-1, 2-2, 2-3. The following elements for surface flow bypasses which should be considered during design of any sluiceway enhancements at The Dalles Dam: (1) form an extensive surface flow bypass flow net (surface bypass discharge greater than {approx}7% of total project discharge), (2) create a gradual increase in water velocity approaching the surface flow bypass (ideally, acceleration < 1 m/s/m), (3) make water

  10. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  11. Improving a high-efficiency, gated spectrometer for x-ray Thomson scattering experiments at the National Ignition Facility

    Energy Technology Data Exchange (ETDEWEB)

    Döppner, T., E-mail: doeppner1@llnl.gov; Bachmann, B.; Emig, J.; Hardy, M.; Kalantar, D. H.; Kritcher, A. L.; Landen, O. L.; Ma, T.; Wood, R. D. [Lawrence Livermore National Laboratory, Livermore, California 94720 (United States); Kraus, D.; Saunders, A. M. [University of California, Berkeley, California 94720 (United States); Neumayer, P. [Gesellschaft für Schwerionenphysik, Darmstadt (Germany); Falcone, R. W. [University of California, Berkeley, California 94720 (United States); Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Fletcher, L. B. [SLAC National Accelerator Laboratory, Menlo Park, California 94720 (United States)

    2016-11-15

    We are developing x-ray Thomson scattering for applications in implosion experiments at the National Ignition Facility. In particular we have designed and fielded MACS, a high-efficiency, gated x-ray spectrometer at 7.5–10 keV [T. Döppner et al., Rev. Sci. Instrum. 85, 11D617 (2014)]. Here we report on two new Bragg crystals based on Highly Oriented Pyrolytic Graphite (HOPG), a flat crystal and a dual-section cylindrically curved crystal. We have performed in situ calibration measurements using a brass foil target, and we used the flat HOPG crystal to measure Mo K-shell emission at 18 keV in 2nd order diffraction. Such high photon energy line emission will be required to penetrate and probe ultra-high-density plasmas or plasmas of mid-Z elements.

  12. Dam break analysis and flood inundation map of Krisak dam for emergency action plan

    Science.gov (United States)

    Juliastuti, Setyandito, Oki

    2017-11-01

    The Indonesian Regulation which refers to the ICOLD Regulation (International Committee on Large Dam required have the Emergency Action Plan (EAP) guidelines because of the dams have potential failure. In EAP guidelines there is a management of evacuation where the determination of the inundation map based on flood modeling. The purpose of the EAP is to minimize the risk of loss of life and property in downstream which caused by dam failure. This paper will describe about develop flood modeling and inundation map in Krisak dam using numerical methods through dam break analysis (DBA) using hydraulic model Zhong Xing HY-21. The approaches of dam failure simulation are overtopping and piping. Overtopping simulation based on quadrangular, triangular and trapezium fracture. Piping simulation based on cracks of orifice. Using results of DBA, hazard classification of Krisak dam is very high. The nearest village affected dam failure is Singodutan village (distance is 1.45 kilometer from dam) with inundation depth is 1.85 meter. This result can be used by stakeholders such as emergency responders and the community at risk in formulating evacuation procedure.

  13. Deformation mechanism of the dam heel of Dagangshan high arch dam based on microseismic monitoring during initial impoundment%基于微震监测的大岗山高拱坝坝踵蓄水初期变形机制研究

    Institute of Scientific and Technical Information of China (English)

    马克; 金峰; 唐春安; 吕鹏飞; 庄端阳

    2017-01-01

    混凝土高拱坝坝踵是蓄水初期阶段拱坝安全的重点关注部位.通过构建国内首套高拱坝坝踵微震监测系统,实现对蓄水初期阶段大岗山拱坝坝踵区微破裂的实时监测,探究坝踵蓄水初期变形机制及其与微震活动性的关系.采用人工敲击试验确定坝踵等效P波波速为4 300 rn/s,系统定位误差小于8m.对系统获取的事件波形进行噪声滤除,并在自动定位基础上进行人工二次校核,提高定位精度,验证了微震监测技术应用于大体积混凝土工程的可行性.分析认为:蓄水初期阶段,大岗山高拱坝坝踵区微震活动性与库水位密切相关,微震事件聚集区实现从坝踵向坝趾的转移,坝踵压缩变形减小,而坝趾区变形量增加.此外,通过拱坝坝踵区微震变形演化过程,揭示了导流洞下闸蓄水前940 m高程基础廊道拱顶裂缝产生的根本诱因.研究成果可为混凝土高拱坝微震监测和真实工作性态研究提供参考.%The safety of the heel of the concrete high arch dam is highly concemed during the initial impoundment.The microseismic monitoring system was installed for the first time in China at the high arch dam heel.The real-time monitoring of the micro-cracks was achieved in the heel zone of the Dagangshan arch dam during the initial impoundment.The deformation mechanism of the arch dam heel and its relationship with the microseismic activities were investigated.The P wave velocity was determined using the manual tapping test and was 4 300 m/s with the error of system positioning less than 8 m.The event waveforms were denoised.The automatic positioning results were manually verified for better accuracy.The results proved the feasibility of applying the microseismic monitoring technology in the large-scale concrete structures.During the initial impoundment period,the microseismic activities of the high arch dam heel were closely related to the water level of reservoir.The accumulation

  14. Hydroacoustic Evaluation of Juvenile Salmonid Passage at The Dalles Dam in 2004

    International Nuclear Information System (INIS)

    Johnson, Gary E.; Hanks, Michael E.; Khan, Fenton; Cook, Chris B.; Hedgepeth, J.; Mueller, Robert P.; Rakowski, Cynthia L.; Richmond, Marshall C.; Sargeant, Susan L.; Serkowski, John A.; Skalski, John R.

    2005-01-01

    The U.S. Army Corps of Engineers Portland District engaged the Pacific Northwest National Laboratory to evaluate juvenile salmon passage at The Dalles Dam in 2004 to inform decisions about long-term measures and operations to enhance sluiceway and spill passage and reduce turbine passage to improve smolt survival at the dam. PNNL used fixed-location hydroacoustic sampling across the entire project, especially at the sluiceway and spillway, using multiple split-beam transducers at selected locations. At the sluiceway nearfield, we used an acoustic camera to track fish. The fish data were interpreted and integrated with hydraulic data from a CFD model and in-field ADCP measurements. Two sluiceway operations were compared: West only (SL 1) vs. West+East (SL 1 + SL 18). Based on our findings, we concluded that The Dalles Dam sluiceway has the potential to be highly efficient and effective at passing juvenile salmonids. This potential could be tapped with hydraulic and entrance enhancements to the sluiceway. We recommended the following: (1) six rather than three sluice gates should be opened to take advantage of the maximum hydraulic capacity of the sluiceway. (2) The turbine units below open sluice gates should be operated as a standard fish operations procedure. (3) In 2005, the Corps and fisheries agencies should consider operating sluice gates in one or more of the following combinations of six gates: (a) SL 1-1, 1-2, 1-3 and SL 18-1, 18-2, 18-3 (repeat 2004 operation), (b) SL 1-1, 1-2, 1-3 and SL 11-1, 11-2, 11-3, or (c) SL 1-1, 1-2, 1-3 and SL 2-1, 2-2, 2-3. The following elements for surface flow bypasses which should be considered during design of any sluiceway enhancements at The Dalles Dam: (1) form an extensive surface flow bypass flow net (surface bypass discharge greater than ∼7% of total project discharge), (2) create a gradual increase in water velocity approaching the surface flow bypass (ideally, acceleration 3 m/s) to entrain the subject juvenile

  15. High post-partum levels of corticosterone given to dams influence postnatal hippocampal cell proliferation and behavior of offspring: A model of post-partum stress and possible depression.

    Science.gov (United States)

    Brummelte, Susanne; Pawluski, Jodi L; Galea, Liisa A M

    2006-09-01

    Post-partum stress and depression (PPD) have a significant effect on child development and behavior. Depression is associated with hypercortisolism in humans, and the fluctuating levels of hormones, including corticosterone, during pregnancy and the post-partum, may contribute to PPD. The present study was developed to investigate the effects of high-level corticosterone (CORT) post-partum in the mother on postnatal neurogenesis and behavior in the offspring. Sprague-Dawley dams were treated with either CORT (40 mg/kg) or sesame oil injections daily for 26 days beginning the day after giving birth. Dams were tested in the forced swim test (FST) and in the open field test (OFT) on days 24-26 post-partum. Results showed that the dams exposed to CORT expressed "depressive-like" behavior compared to controls, with decreased struggling behavior and increased immobility in the FST. To investigate the effects of treatment on hippocampal postnatal cell proliferation and survival in the offspring, males and females from treated dams were injected with BrdU (50 mg/kg) on postnatal day 21 and perfused either 24 h (cell proliferation) or 21 days (cell survival) later. Furthermore, male and female offspring from each litter were tested in adulthood on various behavioral tests, including the forced swim test, open field test, resistance to capture test and elevated plus maze. Intriguingly, male, but not female, offspring of CORT-treated dams exhibited decreased postnatal cell proliferation in the dentate gyrus. Both male and female offspring of CORT-treated dams showed higher resistance to capture and greater locomotor activity as assessed in the open field test. As high levels of CORT may be a characteristic of stress and/or depression, these findings support a model of 'CORT-induced' post-partum stress and possibly depression and demonstrate that the offspring of affected dams can exhibit changes in postnatal neurogenesis and behavior in adulthood.

  16. Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

    Science.gov (United States)

    Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

    2018-02-19

    The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

  17. Comparison between Duncan and Chang’s EB Model and the Generalized Plasticity Model in the Analysis of a High Earth-Rockfill Dam

    Directory of Open Access Journals (Sweden)

    Weixin Dong

    2013-01-01

    Full Text Available Nonlinear elastic model and elastoplastic model are two main kinds of constitutive models of soil, which are widely used in the numerical analyses of soil structure. In this study, Duncan and Chang's EB model and the generalized plasticity model proposed by Pastor, Zienkiewicz, and Chan was discussed and applied to describe the stress-strain relationship of rockfill materials. The two models were validated using the results of triaxial shear tests under different confining pressures. The comparisons between the fittings of models and test data showed that the modified generalized plasticity model is capable of simulating the mechanical behaviours of rockfill materials. The modified generalized plasticity model was implemented into a finite element code to carry out static analyses of a high earth-rockfill dam in China. Nonlinear elastic analyses were also performed with Duncan and Chang's EB model in the same program framework. The comparisons of FEM results and in situ monitoring data showed that the modified PZ-III model can give a better description of deformation of the earth-rockfill dam than Duncan and Chang’s EB model.

  18. Expert Oracle GoldenGate

    CERN Document Server

    Prusinski, Ben; Chung, Richard

    2011-01-01

    Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

  19. Large dams and risk management

    International Nuclear Information System (INIS)

    Cazelais, N.

    2003-01-01

    In July 1996, Quebec's Saguenay region was subjected to intensive rainfall which caused severe floods and uncontrolled release of several reservoirs, resulting in extensive damage to dam structures and reservoirs. The probability of occurrence for that disaster was 1:10,000. Following the disaster, the Quebec government established a dam management body entitled the Commission scientifique et technique sur la gestion des barrages, which pointed out several safety shortcomings of existing dams. Many were either very old or had undergone significant function change without being subsequently re-evaluated. A report by the Commission stated that damage following the floods could have been limited if the design and operating standards of the dams had been more stringent. A Dam Safety Act was adopted by the Quebec National Assembly on May 30, 2000 following recommendations to retain safer structures. The Act demands regular reporting of operating procedures. Seismic activity was noted as being a topic that requires in-depth examination since Quebec's St. Lawrence Valley, particularly the Charlevoix region, is one of Canada's largest seismic zones. The other is on the west coast in British Columbia. Earthquakes in Quebec are less intense than the ones in British Columbia, but they have higher frequency content which exerts a quasi-resonance wave effect which impacts roads, bridges, buildings and hydroelectric generating facilities. Hydro-Quebec is a public utility which owns 563 retaining structures, of which 228 are ranked as large dams that measure more than 15 metres high, 400 metres long and with a reservoir capacity of more than 1 million cubic metres of water. Hydro-Quebec addresses hydrological, seismic, technological and human risks through a dam safety procedure that includes structured plans for choosing best alternatives through staged exercises. Hazard levels are minimized through the adoption of emergency, prevention and alleviation measures. The utility

  20. Qualification of a high-efficiency, gated spectrometer for x-ray Thomson scattering on the National Ignition Facility

    Energy Technology Data Exchange (ETDEWEB)

    Döppner, T.; Kritcher, A. L.; Bachmann, B.; Burns, S.; Hawreliak, J.; House, A.; Landen, O. L.; LePape, S.; Ma, T.; Pak, A.; Swift, D. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Neumayer, P. [Gesellschaft für Schwerionenphysik, 64291 Darmstadt (Germany); Kraus, D. [University of California, Berkeley, California 94720 (United States); Falcone, R. W. [University of California, Berkeley, California 94720 (United States); Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Glenzer, S. H. [SLAC National Accelerator Laboratory, Menlo Park, California 94309 (United States)

    2014-11-15

    We have designed, built, and successfully fielded a highly efficient and gated Bragg crystal spectrometer for x-ray Thomson scattering measurements on the National Ignition Facility (NIF). It utilizes a cylindrically curved Highly Oriented Pyrolytic Graphite crystal. Its spectral range of 7.4–10 keV is optimized for scattering experiments using a Zn He-α x-ray probe at 9.0 keV or Mo K-shell line emission around 18 keV in second diffraction order. The spectrometer has been designed as a diagnostic instrument manipulator-based instrument for the NIF target chamber at the Lawrence Livermore National Laboratory, USA. Here, we report on details of the spectrometer snout, its novel debris shield configuration and an in situ spectral calibration experiment with a Brass foil target, which demonstrated a spectral resolution of E/ΔE = 220 at 9.8 keV.

  1. A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen

    Science.gov (United States)

    Lee, I.-K.; Jeun, M.; Jang, H.-J.; Cho, W.-J.; Lee, K. H.

    2015-10-01

    Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor based on a self-amplified transistor under dual gate operation (immuno-DG ISFET) for the detection of hepatitis B surface antigen. To address the challenges in current ISFET-based immunosensors, we have enhanced the sensitivity of an immunosensor by precisely tailoring the nanostructure of the transistor. In the pH sensing test, the immuno-DG ISFET showed superior sensitivity (2085.53 mV per pH) to both standard ISFET under single gate operation (58.88 mV per pH) and DG ISFET with a non-tailored transistor (381.14 mV per pH). Moreover, concerning the detection of hepatitis B surface antigens (HBsAg) using the immuno-DG ISFET, we have successfully detected trace amounts of HBsAg (22.5 fg mL-1) in a non-diluted 1× PBS medium with a high sensitivity of 690 mV. Our results demonstrate that the proposed immuno-DG ISFET can be a biosensor platform for practical use in the diagnosis of various diseases.Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor

  2. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  3. TYPOLOGY OF LARGE DAMS. A REVIEW

    Directory of Open Access Journals (Sweden)

    Gheorghe ROMANESCU

    2015-06-01

    Full Text Available The dams represent hydrotechnical constructions meant to ensure a judicious use of water resources. The international literature is extremely rich in data regarding the large dams on Earth. In this context, a hierarchy of the main dams is attempted and the role they play in the economic development of the regions they were built in is underlined. The largest dams are built on the big rivers in Asia, North America, South America and Africa. The reservoirs have multiple roles: electricity production, drinking or industrial water supply, irrigations, recreation, etc. High costs and land fragility do not allow the construction of dams in the places most affected by drought or flood. This is why they are usually built in mountainous areas, at great distance from the populated centres. On the Romanian territory, there are 246 large dams, built in the hydrographical basins of Siret, Olt, Arges, Somes, etc. The largest rivers on Earth, by discharge, (Amazon and Zair do not also include the largest dams because the landform and the type of flow have not allowed such constructions.

  4. Effect of a dam on epilithic algal communities of a mountain stream: before-after dam construction comparison

    Directory of Open Access Journals (Sweden)

    Luciana Cibils Martina

    2013-02-01

    Full Text Available In this study we evaluated the effect of a dam on epilithic algal communities by analyzing community response after dam construction and by comparing community composition, structure and biomass upstream and downstream of the dam. Samples of epilithic algae and environmental data were collected at each site during high and low water periods before and after dam construction in Achiras Stream (Córdoba, Argentina. Ordinations showed modifications in algal assemblages after dam construction and downstream of the dam. Ordinations also suggested a loss of seasonality at the downstream site since the assemblages were similar between hydrological periods after dam construction. Indicator species, obtained by the Indicator Value method, showed that, after dam construction, there could have been an increase in nutrient concentration and a release of plankton from the impoundment. Abundance, richness and diversity were altered after dam construction as assessed by ANOVAs derived from a modified BACI Design. Proportion of early-successional species was higher at the upstream site while late-successional species were dominant at the downstream site, as predicted. Lower fluctuations in discharge downstream of the dam may have helped succession advance, whereas at the upstream site, mainly during the high water period, floods could have caused sloughing of life forms from the outer layers of the biofilm, resetting the algal community to early successional stages. It may be concluded that the dam affected algal community and favored succession advance mainly by reducing current velocity and flow fluctuations.

  5. Dam safety operating guidelines

    International Nuclear Information System (INIS)

    Elsayed, E.; Leung, T.; Kirkham, A.; Lum, D.

    1990-01-01

    As part of Ontario Hydro's dam structure assessment program, the hydraulic design review of several river systems has revealed that many existing dam sites, under current operating procedures, would not have sufficient discharge capacity to pass the Inflow Design Flood (IDF) without compromising the integrity of the associated structures. Typical mitigative measures usually considered in dealing with these dam sites include structural alterations, emergency action plans and/or special operating procedures designed for extreme floods. A pilot study was carried out for the Madawaska River system in eastern Ontario, which has seven Ontario Hydro dam sites in series, to develop and evaluate the effectiveness of the Dam Safety Operating Guidelines (DSOG). The DSOG consist of two components: the flood routing schedules and the minimum discharge schedules, the former of which would apply in the case of severe spring flood conditions when the maximum observed snowpack water content and the forecast rainfall depth exceed threshold values. The flood routing schedules would identify to the operator the optimal timing and/or extent of utilizing the discharge facilities at each dam site to minimize the potential for dam failures cased by overtopping anywhere in the system. It was found that the DSOG reduced the number of structures overtopped during probable maximum flood from thirteen to four, while the number of structures that could fail would be reduced from seven to two. 8 refs., 4 figs., 3 tabs

  6. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    Science.gov (United States)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  7. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    International Nuclear Information System (INIS)

    Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

    2016-01-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

  8. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  9. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2011-01-01

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  10. Dam-breach analysis and flood-inundation mapping for selected dams in Oklahoma City, Oklahoma, and near Atoka, Oklahoma

    Science.gov (United States)

    Shivers, Molly J.; Smith, S. Jerrod; Grout, Trevor S.; Lewis, Jason M.

    2015-01-01

    Dams provide beneficial functions such as flood control, recreation, and storage of water supplies, but they also entail risk; dam breaches and resultant floods can cause substantial property damage and loss of life. The State of Oklahoma requires each owner of a high-hazard dam, which the Federal Emergency Management Agency defines as dams for which failure or improper operation probably will cause loss of human life, to develop an emergency action plan specific to that dam. Components of an emergency action plan are to simulate a flood resulting from a possible dam breach and map the resulting downstream flood-inundation areas. The resulting flood-inundation maps can provide valuable information to city officials, emergency managers, and local residents for planning an emergency response if a dam breach occurs.

  11. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    Science.gov (United States)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  12. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    International Nuclear Information System (INIS)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-01-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO x layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 μm/50 μm) fabricated on glass exhibited a high field-effect mobility of 35.8 cm 2 /V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I on/off ratio of 4.9x10 6 , which is acceptable for use as the switching transistor of an active-matrix TFT backplane

  13. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

    Science.gov (United States)

    Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

    2016-06-07

    In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  14. Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

    International Nuclear Information System (INIS)

    Vasallo, B G; González, T; Mateos, J; Rodilla, H; Moschetti, G; Grahn, J

    2012-01-01

    The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics. (paper)

  15. Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

    Science.gov (United States)

    Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

    2017-11-01

    In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

  16. High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Naif H. Al-Hardan

    2016-06-01

    Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  17. Study of environmental isotope distribution in the Aswan High Dam Lake (Egypt) for estimation of evaporation of lake water and its recharge to adjacent groundwater

    International Nuclear Information System (INIS)

    Aly, A.I.M.; Nada, A.; Awad, M.; Hamza, M.; Salem, W.M.

    1993-01-01

    Oxygen-18 ( 18 O) and deuterium isotopes were used to estimate the evaporation from the Aswan High Dam Lake and to investigate the inter-relation between the lake water and adjacent groundwater. According to stable isotopic analysis of samples taken in 1988 and 1989, the lake can be divided into two sections. In the first section extending between Abu Simbel and a point between El-Alaki and Krosko, a remarkable vertical gradient of 18 O and deuterium isotopic composition was observed. The second northern sector extending to the High Dam is characterised by a lower vertical isotopic gradient. In this sector in general, higher values of 18 O and deuterium contents were found at the top and lower values at the bottom. Also a strong horizontal increase of the heavy isotope content was observed. Thus, in the northern section evaporation is of dominating influence on the isotopic composition of the lake water. With the help of an evaporation pan experiment it was possible to calibrate the evaporative isotope enrichment in the lake and to facilitate a preliminary estimate of evaporative losses of lake water. The evaporation from the lake was estimated to be about 19% of the input water flow rate. The groundwater around the lake was investigated and samples from production wells and piezometers were subjected to isotopic analysis. The results indicate that recent recharge to the groundwater aquifer is limited to wells near to the lake and up to a maximum distance of about 10 km. The contribution of recent Nile water to the groundwater in these wells was estimated to range between 23 and 70%. Beyond this distance, palaeowater was observed with highly depleted deuterium and 18 O contents, which was also confirmed by 14c dating. The age of palaeo groundwater in this area can reach values of more than 26,000 years. Recommendations are given for efficient water management of the lake water. (Author)

  18. Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

    International Nuclear Information System (INIS)

    Usuda, R.; Uchida, K.; Nozaki, S.

    2015-01-01

    Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiO x film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 × 10 11  cm −2 eV −1 by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 °C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H 2 O molecules and facilitate dissociation of the molecules into H and OH − . The OH − ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H 2 O molecules. The ionization results in the electron stimulated dissociation of H 2 O molecules and the decreased interface trap density

  19. Low-temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

    Energy Technology Data Exchange (ETDEWEB)

    Usuda, R.; Uchida, K.; Nozaki, S., E-mail: nozaki@ee.uec.ac.jp [Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-1515 (Japan)

    2015-11-02

    Although a UV cure was found to effectively convert a perhydropolysilazane (PHPS) spin-on-glass film into a dense SiO{sub x} film at low temperature, the electrical characteristics were never reported in order to recommend the use of PHPS as a gate-oxide material that can be formed at low temperature. We have formed a high-quality gate oxide by UV irradiation on the PHPS film, and obtained an interface midgap trap density of 3.4 × 10{sup 11 }cm{sup −2} eV{sup −1} by the UV wet oxidation and UV post-metallization annealing (PMA), at a temperature as low as 160 °C. In contrast to the UV irradiation using short-wavelength UV light, which is well known to enhance oxidation by the production of the excited states of oxygen, the UV irradiation was carried out using longer-wavelength UV light from a metal halide lamp. The UV irradiation during the wet oxidation of the PHPS film generates electron-hole pairs. The electrons ionize the H{sub 2}O molecules and facilitate dissociation of the molecules into H and OH{sup −}. The OH{sup −} ions are highly reactive with Si and improve the stoichiometry of the oxide. The UV irradiation during the PMA excites the electrons from the accumulation layer, and the built-in electric field makes the electron injection into the oxide much easier. The electrons injected into the oxide recombine with the trapped holes, which have caused a large negative flat band voltage shift after the UV wet oxidation, and also ionize the H{sub 2}O molecules. The ionization results in the electron stimulated dissociation of H{sub 2}O molecules and the decreased interface trap density.

  20. Sustainability of dams-an evaluation approach

    Science.gov (United States)

    Petersson, E.

    2003-04-01

    Situated in the stream bed of a river, dams and reservoirs interrupt the natural hydrological cycle. They are very sensitive to all kinds of changes in the catchment, among others global impacts on land use, climate, settlement structures or living standards. Vice versa dams strongly affect the spatially distributed, complex system of ecology, economy and society in the catchment both up- and downstream of the reservoir. The occurrence of negative impacts due to large dams led to serious conflicts about future dams. Nevertheless, water shortages due to climatic conditions and their changes, that are faced by enormous water and energy demands due to rising living standards of a growing world population, seem to require further dam construction, even if both supply and demand management are optimised. Although environmental impact assessments are compulsory for dams financed by any of the international funding agencies, it has to be assumed that the projects lack sustainability. Starting from an inventory of today's environmental impact assessments as an integral part of a feasibility study the presentation will identify their inadequacies with regard to the sustainability of dams. To improve the sustainability of future dams and avoid the mistakes of the past, the planning procedures for dams have to be adapted. The highly complex and dynamical system of interrelated physical and non-physical processes, that involves many different groups of stakeholders, constitutes the need for a model-oriented decision support system. In line with the report of the World Commission of Dams an integrated analysis and structure of the complex interrelations between dams, ecology, economy and society will be presented. Thus the system, that a respective tool will be based on, is analysed. Furthermore an outlook will be given on the needs of the potential users of a DSS and how it has to be embedded in the overall planning process. The limits of computer-based decision-support in the

  1. Construction of high-dimensional universal quantum logic gates using a Λ system coupled with a whispering-gallery-mode microresonator.

    Science.gov (United States)

    He, Ling Yan; Wang, Tie-Jun; Wang, Chuan

    2016-07-11

    High-dimensional quantum system provides a higher capacity of quantum channel, which exhibits potential applications in quantum information processing. However, high-dimensional universal quantum logic gates is difficult to achieve directly with only high-dimensional interaction between two quantum systems and requires a large number of two-dimensional gates to build even a small high-dimensional quantum circuits. In this paper, we propose a scheme to implement a general controlled-flip (CF) gate where the high-dimensional single photon serve as the target qudit and stationary qubits work as the control logic qudit, by employing a three-level Λ-type system coupled with a whispering-gallery-mode microresonator. In our scheme, the required number of interaction times between the photon and solid state system reduce greatly compared with the traditional method which decomposes the high-dimensional Hilbert space into 2-dimensional quantum space, and it is on a shorter temporal scale for the experimental realization. Moreover, we discuss the performance and feasibility of our hybrid CF gate, concluding that it can be easily extended to a 2n-dimensional case and it is feasible with current technology.

  2. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

    Science.gov (United States)

    Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

    2018-05-01

    The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

  3. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

    Science.gov (United States)

    Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

    2018-02-01

    The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

  4. Allegheny County Dam Locations

    Data.gov (United States)

    Allegheny County / City of Pittsburgh / Western PA Regional Data Center — This dataset shows the point locations of dams in Allegheny County. If viewing this description on the Western Pennsylvania Regional Data Center’s open data portal...

  5. Seismic risks at Elsie Lake Main Dam

    International Nuclear Information System (INIS)

    McCammon, N.R.; Momenzadeh, M.; Hawson, H.H.; Nielsen, N.M.

    1991-01-01

    The Elsie Lake dams are located on Vancouver Island in an area of high seismic risk. A safety review in 1986 indicated potential deficiencies in the earthfill main dam with respect to modern earthquake design standards. A detailed field investigation program comprising drilling and penetration tests was carried out and the results used in an assessment of seismic stability. A 0.8 m thick less dense layer in the granular shell of the dam, possibly caused by wet construction conditions, would likely liquefy in a major earthquake but sufficient residual strength would likely remain to prevent catastrophic failure. The dam shell might undergo some distortion, and an assessment was initiated to determine the requirements for reservoir drawdown following an extreme earthquake to ensure the timely lowering of the reservoir for inspection and repair. It was suggested that an adequate evacuation capability would be 25% and 50% drawdown in not more than 30 and 50 days, respectively. 9 refs., 11 figs., 1 tab

  6. Teton Dam failure

    Energy Technology Data Exchange (ETDEWEB)

    Snorteland, N. [United States Dept. of the Interior, Washington, DC (United States). Bureau of Reclamation

    2009-07-01

    This case summary discussed an internal erosion failure that occurred at the embankment foundation of Teton Dam. The project was designed as a run-of-the-river power generation facility and to provide irrigation, flood protection, and power generation to the lower Teton region of southern Idaho. The dam site was located next to the eastern Snake River plain, a volcanic filled depression. The foundation's cutoff trench was excavated into the bedrock along the length of the dam. The dam was designed as a zoned earthfill with a height of 305 feet. A trench made of low plasticity windblown silt was designed to connect the embankment core to the rock foundation. Seeps were noted in 1976, and a leak was observed near the toe of the dam. A wet spot appeared on the downstream face of the dam at elevation 5200. A sinkhole then developed. The embankment crest collapsed, and the dam breached. Peak outflow was estimated at 1,000,000 cfs. The failure was attributed to a lack of communication between designers, a failure to understand geologic information about the region, and an insufficient review of designs and specifications by designers and field personnel. No monitoring instrumentation was installed in the embankment. Approximately 300 square miles were inundated, and 25,000 people were displaced. Eleven people were killed. A review group noted that the rock surface was not adequately sealed, and that the dam failed as a result of inadequate protection of the impervious core material from internal erosion. 42 figs.

  7. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    International Nuclear Information System (INIS)

    Katsuno, Takashi; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-01-01

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  8. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  10. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks

  11. Characterization, integration and reliability of HfO{sub 2} and LaLuO{sub 3} high-κ/metal gate stacks for CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Nichau, Alexander

    2013-07-15

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO{sub 3} and HfO{sub 2} are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO{sub 3} and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO{sub 3} is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO{sub 3} on germanium, germanate formation is shown. LaLuO{sub 3} is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO{sub 3} in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO{sub 3} and HfO{sub 2}. Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO{sub 2} gate stacks is scalable below 1 nm by the use of thinned interfacial SiO{sub 2}. The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the

  12. Crotch Lake dam rehabilitation project

    International Nuclear Information System (INIS)

    Brunet, G.; Dobrowolski, E.

    1999-01-01

    Replacement of the existing wood crib dam structure on Crotch Lake on the Mississippi River in eastern Ontario that provided water storage for the power production at High Falls Generating Station, became necessary when it was determined that the dam did not meet Ontario-Hydro's safety standards. This paper describes the project of replacing the existing structure with a PVC coated gabion wall with waterproofing. The entire structure was covered with three layers of wire mesh, laced together, and criss-crossed for superior strength and rigidity. The work was completed in 28 days with no environmental impact . Life expectancy of the new structure is in excess of 40 years. With periodic maintenance of the gabion mat cover, life span could be extended an additional 20 to 40 years. 5 figs

  13. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  14. Approaches of Bill & Melinda Gates Foundation-Funded Intermediary Organizations to Structuring and Supporting Small High Schools in New York City. Executive Summary

    Science.gov (United States)

    Foley, Eileen

    2010-01-01

    In 2003, a few years after the Bill & Melinda Gates Foundation began implementing its small schools reform agenda, the Chancellor of the New York City Department of Education (DOE) announced a plan to replace large failing high schools in New York City with 200 small schools. In short order, the foundation and the Chancellor became partners with…

  15. Theory and implementation of a very high throughput true random number generator in field programmable gate array

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yonggang, E-mail: wangyg@ustc.edu.cn; Hui, Cong; Liu, Chong; Xu, Chao [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China)

    2016-04-15

    The contribution of this paper is proposing a new entropy extraction mechanism based on sampling phase jitter in ring oscillators to make a high throughput true random number generator in a field programmable gate array (FPGA) practical. Starting from experimental observation and analysis of the entropy source in FPGA, a multi-phase sampling method is exploited to harvest the clock jitter with a maximum entropy and fast sampling speed. This parametrized design is implemented in a Xilinx Artix-7 FPGA, where the carry chains in the FPGA are explored to realize the precise phase shifting. The generator circuit is simple and resource-saving, so that multiple generation channels can run in parallel to scale the output throughput for specific applications. The prototype integrates 64 circuit units in the FPGA to provide a total output throughput of 7.68 Gbps, which meets the requirement of current high-speed quantum key distribution systems. The randomness evaluation, as well as its robustness to ambient temperature, confirms that the new method in a purely digital fashion can provide high-speed high-quality random bit sequences for a variety of embedded applications.

  16. Gate replacement at the Upper Lake Falls development

    International Nuclear Information System (INIS)

    Chen, C.T.; Locke, A.E.; Brown, E.R.

    1998-01-01

    Nova Scotia Power's integrated approach to dam safety was discussed. One of the two intake gates at Unit 1 of the Upper Falls Power Plant on the Mersey River was replaced in 1997 as part of the Utility's upgrading program. In the event of governor failure or turbine runaway, the new roller gate will allow operators to close the original sliding gate first under a more-or-less balanced head condition, and then to close the new roller gate under a full-flow condition. The planning, design and construction of the new roller gate is described. One of the two head gates of Unit 2 at the same station will be replaced in a similar fashion in the fall of 1998. 4 refs., 7 figs

  17. Geodetic deformation monitoring at Pendidikan Diponegoro Dam

    Science.gov (United States)

    Yuwono, Bambang Darmo; Awaluddin, Moehammad; Yusuf, M. A.; Fadillah, Rizki

    2017-07-01

    Deformation monitoring is one indicator to assess the feasibility of Dam. In order to get the correct result of the deformation, it is necessary to determine appropriate deformation monitoring network and the observation data should be analyse and evaluated carefully. Measurement and analysis of deformation requires relatively accurate data and the precision is high enough, one of the observation method that used is GPS (Global Positioning System). The research was conducted at Pendidikan Undip Dams is Dam which is located in Tembang. Diponegoro Dam was built in 2013 and a volume of 50.86 m3 of water, inundation normal width of up to 13,500 m2. The main purpose of these building is not only for drainage but also for education and micro hydro power plant etc. The main goal of this reasearch was to monitor and analyze the deformation at Pendidikan Undip Dam and to determaine whether GPS measurement could meet accuracy requirement for dam deformation measurements. Measurements were made 2 times over 2 years, 2015 and 2016 using dual frequency GPS receivers with static methods and processed by Scientific Software GAMIT 10.6

  18. Langbjorn dam : adaptation for safe discharge of extreme floods

    Energy Technology Data Exchange (ETDEWEB)

    Yang, J. [Vattenfall Research and Development, Alvkarleby (Sweden); Ericsson, H.; Gustafsson, A. [SWECO, Stockholm (Sweden); Stenmark, M. [Vattenfall Power Consultant, Ludvika (Sweden); Mikaelsson, J. [Vattenfall Nordic Generation, Bispgarden (Sweden)

    2007-07-01

    The Langbjorn hydropower scheme, composed of an embankment dam with an impervious core of compacted moraine, a spillway section and a powerhouse, is located on the Angermanalven River in north Sweden. The scheme was commissioned in 1959 and is owned by Vattenfall. As part of its dam safety program, Vattenfall plans to adapt and refurbish many of its dams to the updated design-flood and dam-safety guidelines. Langbjorn is classified as a high hazard dam, as its updated design flood is 30 per cent higher than the existing spillway capacity. Safety evaluations were conducted for the Langbjorn dam, and, as required by the higher safety standard, there was a need to rebuild the dam, so that the design flood could be safely released without causing failure of the dam. This paper provided information on the Langbjorn hydropower scheme and discussed the planned rebuilding measures. For example, the design flood was accommodated by allowing a temporary raise of the water level by 1.3 metres above the legal retention reservoir level, which required heightening and reinforcement of the dam. Specifically, the paper discussed measures to increase the discharge capacity; handling and control of floating debris; improvement and heightening of impervious core in left and right connecting dam and abutment; measures to increase the stability of the left steep riverbank; and measures to increase stability of the spillway monoliths and the left guide wall. In addition, the paper discussed measures to ensure stability of the downstream stretch of the river bank and increase instrumentation. The paper also presented the results of hydraulic investigations to investigate the risk of erosion downstream of the dam. It was concluded that the dam could discharge the design flood and that the stability of the dam was improved and judged to be satisfactory during all foreseeable conditions. 2 refs., 8 figs.

  19. A novel optical gating method for laser gated imaging

    Science.gov (United States)

    Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

    2013-06-01

    For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

  20. Highly-accelerated self-gated free-breathing 3D cardiac cine MRI: validation in assessment of left ventricular function.

    Science.gov (United States)

    Liu, Jing; Feng, Li; Shen, Hsin-Wei; Zhu, Chengcheng; Wang, Yan; Mukai, Kanae; Brooks, Gabriel C; Ordovas, Karen; Saloner, David

    2017-08-01

    This work presents a highly-accelerated, self-gated, free-breathing 3D cardiac cine MRI method for cardiac function assessment. A golden-ratio profile based variable-density, pseudo-random, Cartesian undersampling scheme was implemented for continuous 3D data acquisition. Respiratory self-gating was achieved by deriving motion signal from the acquired MRI data. A multi-coil compressed sensing technique was employed to reconstruct 4D images (3D+time). 3D cardiac cine imaging with self-gating was compared to bellows gating and the clinical standard breath-held 2D cine imaging for evaluation of self-gating accuracy, image quality, and cardiac function in eight volunteers. Reproducibility of 3D imaging was assessed. Self-gated 3D imaging provided an image quality score of 3.4 ± 0.7 vs 4.0 ± 0 with the 2D method (p = 0.06). It determined left ventricular end-systolic volume as 42.4 ± 11.5 mL, end-diastolic volume as 111.1 ± 24.7 mL, and ejection fraction as 62.0 ± 3.1%, which were comparable to the 2D method, with bias ± 1.96 × SD of -0.8 ± 7.5 mL (p = 0.90), 2.6 ± 3.3 mL (p = 0.84) and 1.4 ± 6.4% (p = 0.45), respectively. The proposed 3D cardiac cine imaging method enables reliable respiratory self-gating performance with good reproducibility, and provides comparable image quality and functional measurements to 2D imaging, suggesting that self-gated, free-breathing 3D cardiac cine MRI framework is promising for improved patient comfort and cardiac MRI scan efficiency.

  1. Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

    International Nuclear Information System (INIS)

    Qi Lu-Wei; Yang Hong; Ren Shang-Qing; Xu Ye-Feng; Luo Wei-Chun; Xu Hao; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125 °C, 160 °C) are studied and activation energy (E a ) values (0.13 eV and 0.15 eV) are extracted. Although the equivalent oxide thickness (EOT) values of two TiN thickness values are almost similar (0.85 nm and 0.87 nm), the 2.4-nm TiN one (thicker TiN capping layer) shows better PBTI reliability (13.41% at 0.9 V, 90 °C, 1000 s). This is due to the better interfacial layer/high-k (IL/HK) interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer. (paper)

  2. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-01-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f_t/f_m_a_x of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f_t/f_m_a_x of 48/60 GHz.

  3. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Science.gov (United States)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-08-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

  4. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J. [Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)

    2016-08-08

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

  5. Dams and Intergovernmental Transfers

    Science.gov (United States)

    Bao, X.

    2012-12-01

    Gainers and Losers are always associated with large scale hydrological infrastructure construction, such as dams, canals and water treatment facilities. Since most of these projects are public services and public goods, Some of these uneven impacts cannot fully be solved by markets. This paper tried to explore whether the governments are paying any effort to balance the uneven distributional impacts caused by dam construction or not. It showed that dam construction brought an average 2% decrease in per capita tax revenue in the upstream counties, a 30% increase in the dam-location counties and an insignificant increase in downstream counties. Similar distributional impacts were observed for other outcome variables. like rural income and agricultural crop yields, though the impacts differ across different crops. The paper also found some balancing efforts from inter-governmental transfers to reduce the unevenly distributed impacts caused by dam construction. However, overall the inter-governmental fiscal transfer efforts were not large enough to fully correct those uneven distributions, reflected from a 2% decrease of per capita GDP in upstream counties and increase of per capita GDP in local and downstream counties. This paper may shed some lights on the governmental considerations in the decision making process for large hydrological infrastructures.

  6. Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

    Science.gov (United States)

    Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

    2015-07-28

    High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

  7. High-Threshold Low-Overhead Fault-Tolerant Classical Computation and the Replacement of Measurements with Unitary Quantum Gates.

    Science.gov (United States)

    Cruikshank, Benjamin; Jacobs, Kurt

    2017-07-21

    von Neumann's classic "multiplexing" method is unique in achieving high-threshold fault-tolerant classical computation (FTCC), but has several significant barriers to implementation: (i) the extremely complex circuits required by randomized connections, (ii) the difficulty of calculating its performance in practical regimes of both code size and logical error rate, and (iii) the (perceived) need for large code sizes. Here we present numerical results indicating that the third assertion is false, and introduce a novel scheme that eliminates the two remaining problems while retaining a threshold very close to von Neumann's ideal of 1/6. We present a simple, highly ordered wiring structure that vastly reduces the circuit complexity, demonstrates that randomization is unnecessary, and provides a feasible method to calculate the performance. This in turn allows us to show that the scheme requires only moderate code sizes, vastly outperforms concatenation schemes, and under a standard error model a unitary implementation realizes universal FTCC with an accuracy threshold of p<5.5%, in which p is the error probability for 3-qubit gates. FTCC is a key component in realizing measurement-free protocols for quantum information processing. In view of this, we use our scheme to show that all-unitary quantum circuits can reproduce any measurement-based feedback process in which the asymptotic error probabilities for the measurement and feedback are (32/63)p≈0.51p and 1.51p, respectively.

  8. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2013-01-01

    (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

  9. Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

    Science.gov (United States)

    Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

    2018-06-01

    In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

  10. Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Pang Liang; Kim, Kyekyoon

    2012-01-01

    A bimodal deposition scheme combining radiofrequency magnetron sputtering and plasma enhanced chemical vapour deposition (PECVD) is proposed as a means for improving the performance of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). High-density sputtered-SiO 2 is utilized to reduce the gate leakage current and enhance the breakdown voltage while low-density PECVD-SiO 2 is employed to buffer the sputtering damage and further increase the drain current by engineering the stress-induced-polarization. Thus-fabricated MOSHEMT exhibited a low leakage current of 4.21 × 10 -9 A mm -1 and high breakdown voltage of 634 V for a gate-drain distance of 6 µm, demonstrating the promise of bimodal-SiO 2 deposition scheme for the development of GaN-based MOSHEMTs for high-power application. (paper)

  11. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    International Nuclear Information System (INIS)

    Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

  12. pH sensor using AlGaN/GaN high electron mobility transistors with Sc2O3 in the gate region

    International Nuclear Information System (INIS)

    Kang, B. S.; Wang, H. T.; Ren, F.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-01-01

    Ungated AlGaN/GaN high electron mobility transistors (HEMTs) exhibit large changes in current upon exposing the gate region to polar liquids. The polar nature of the electrolyte introduced leds to a change of surface charges, producing a change in surface potential at the semiconductor/liquid interface. The use of Sc 2 O 3 gate dielectric produced superior results to either a native oxide or UV ozone-induced oxide in the gate region. The ungated HEMTs with Sc 2 O 3 in the gate region exhibited a linear change in current between pH 3 and 10 of 37 μA/pH. The HEMT pH sensors show stable operation with a resolution of <0.1 pH over the entire pH range. The results indicate that the HEMTs may have application in monitoring pH solution changes between 7 and 8, the range of interest for testing human blood

  13. High-sensitivity assay for Hg (II) and Ag (I) ion detection: A new class of droplet digital PCR logic gates for an intelligent DNA calculator.

    Science.gov (United States)

    Cheng, Nan; Zhu, Pengyu; Xu, Yuancong; Huang, Kunlun; Luo, Yunbo; Yang, Zhansen; Xu, Wentao

    2016-10-15

    The first example of droplet digital PCR logic gates ("YES", "OR" and "AND") for Hg (II) and Ag (I) ion detection has been constructed based on two amplification events triggered by a metal-ion-mediated base mispairing (T-Hg(II)-T and C-Ag(I)-C). In this work, Hg(II) and Ag(I) were used as the input, and the "true" hierarchical colors or "false" green were the output. Through accurate molecular recognition and high sensitivity amplification, positive droplets were generated by droplet digital PCR and viewed as the basis of hierarchical digital signals. Based on this principle, YES gate for Hg(II) (or Ag(I)) detection, OR gate for Hg(II) or Ag(I) detection and AND gate for Hg(II) and Ag(I) detection were developed, and their sensitively and selectivity were reported. The results indicate that the ddPCR logic system developed based on the different indicators for Hg(II) and Ag(I) ions provides a useful strategy for developing advanced detection methods, which are promising for multiplex metal ion analysis and intelligent DNA calculator design applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. 5. decennial inspection of Tignes dam. Draining of the higher french dam; 5. inspection decennale du barrage de Tignes. Vidange du plus haut barrage de France

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    This document deals with the 5. decennial inspection of the Tignes dam. The Tignes dam has been drained to allow EDF and the public authorities to verify the dam wall, of 180 m high, in order to validate the next decade. The four steps of the drainage are described as the maintenance policy of such building. (A.L.B.)

  15. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  16. Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

    Directory of Open Access Journals (Sweden)

    A. Stockklauser

    2017-03-01

    Full Text Available The strong coupling limit of cavity quantum electrodynamics (QED implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π=238  MHz at a resonator linewidth κ/2π=12  MHz and a DQD charge qubit decoherence rate of γ_{2}/2π=40  MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.

  17. Generation of high-intensity sub-30 as pulses by inhomogeneous polarization gating technology in bowtie-shaped nanostructure

    Science.gov (United States)

    Feng, Liqiang; Feng, A. Yuanzi

    2018-04-01

    The generation of high-order harmonics and single attosecond pulses (SAPs) from He atom driven by the inhomogeneous polarization gating technology in a bowtie-shaped nanostructure is theoretically investigated. The results show that by the proper addition of bowtie-shaped nanostructure along the driven laser polarization direction, the harmonic emission becomes sensitive to the position of the laser field, and the harmonics emitted at the maximum orders that generate SAPs occur only at one side of the region inside the nanostructure. As a result, not only the harmonic cutoff can be extended, but also the modulations of the harmonics can be decreased, showing a carrier envelope phase independent harmonic cutoff with a bandwidth of 310 eV. Further, with the proper introduction of an ultraviolet pulse, the harmonic yield can be enhanced by 2 orders of magnitude. Finally, by the Fourier transformation of the selected harmonics, some SAPs with a full width at half maximum of sub-30 as can be obtained.

  18. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  19. Gating circuit for single photon-counting fluorescence lifetime instruments using high repetition pulsed light sources

    International Nuclear Information System (INIS)

    Laws, W.R.; Potter, D.W.; Sutherland, J.C.

    1984-01-01

    We have constructed a circuit that permits conventional timing electronics to be used in single photon-counting fluorimeters with high repetition rate excitation sources (synchrotrons and mode-locked lasers). Most commercial time-to-amplitude and time-to-digital converters introduce errors when processing very short time intervals and when subjected to high-frequency signals. This circuit reduces the frequency of signals representing the pulsed light source (stops) to the rate of detected fluorescence events (starts). Precise timing between the start/stop pair is accomplished by using the second stop pulse after a start pulse. Important features of our design are that the circuit is insensitive to the simultaneous occurrence of start and stop signals and that the reduction in the stop frequency allows the start/stop time interval to be placed in linear regions of the response functions of commercial timing electronics

  20. Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

    Science.gov (United States)

    Matsuura, Hideharu

    2015-04-01

    High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

  1. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

    Science.gov (United States)

    Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

    2014-08-01

    Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

  2. Fluorescence-based high-throughput functional profiling of ligand-gated ion channels at the level of single cells.

    Directory of Open Access Journals (Sweden)

    Sahil Talwar

    Full Text Available Ion channels are involved in many physiological processes and are attractive targets for therapeutic intervention. Their functional properties vary according to their subunit composition, which in turn varies in a developmental and tissue-specific manner and as a consequence of pathophysiological events. Understanding this diversity requires functional analysis of ion channel properties in large numbers of individual cells. Functional characterisation of ligand-gated channels involves quantitating agonist and drug dose-response relationships using electrophysiological or fluorescence-based techniques. Electrophysiology is limited by low throughput and high-throughput fluorescence-based functional evaluation generally does not enable the characterization of the functional properties of each individual cell. Here we describe a fluorescence-based assay that characterizes functional channel properties at single cell resolution in high throughput mode. It is based on progressive receptor activation and iterative fluorescence imaging and delivers >100 dose-responses in a single well of a 384-well plate, using α1-3 homomeric and αβ heteromeric glycine receptor (GlyR chloride channels as a model system. We applied this assay with transiently transfected HEK293 cells co-expressing halide-sensitive yellow fluorescent protein and different GlyR subunit combinations. Glycine EC50 values of different GlyR isoforms were highly correlated with published electrophysiological data and confirm previously reported pharmacological profiles for the GlyR inhibitors, picrotoxin, strychnine and lindane. We show that inter and intra well variability is low and that clustering of functional phenotypes permits identification of drugs with subunit-specific pharmacological profiles. As this method dramatically improves the efficiency with which ion channel populations can be characterized in the context of cellular heterogeneity, it should facilitate systems

  3. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

    International Nuclear Information System (INIS)

    Bhattacharjee, A.; Lenka, T. R.

    2014-01-01

    We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

  4. Dam Design can Impede Adaptive Management of Environmental Flows: A Case Study from the Opuha Dam, New Zealand

    Science.gov (United States)

    Lessard, JoAnna; Murray Hicks, D.; Snelder, Ton H.; Arscott, David B.; Larned, Scott T.; Booker, Doug; Suren, Alastair M.

    2013-02-01

    The Opuha Dam was designed for water storage, hydropower, and to augment summer low flows. Following its commissioning in 1999, algal blooms (dominated first by Phormidium and later Didymosphenia geminata) downstream of the dam were attributed to the reduced frequency and magnitude of high-flow events. In this study, we used a 20-year monitoring dataset to quantify changes associated with the dam. We also studied the effectiveness of flushing flows to remove periphyton from the river bed. Following the completion of the dam, daily maximum flows downstream have exceeded 100 m3 s-1 only three times; two of these floods exceeded the pre-dam mean annual flood of 203 m3 s-1 (compared to 19 times >100 m3 s-1 and 6 times >203 m3 s-1 in the 8 years of record before the dam). Other changes downstream included increases in water temperature, bed armoring, frequency of algal blooms, and changes to the aquatic invertebrate community. Seven experimental flushing flows resulted in limited periphyton reductions. Flood wave attenuation, bed armoring, and a shortage of surface sand and gravel, likely limited the effectiveness of these moderate floods. Floods similar to pre-dam levels may be effective for control of periphyton downstream; however, flushing flows of that magnitude are not possible with the existing dam infrastructure. These results highlight the need for dams to be planned and built with the capacity to provide the natural range of flows for adaptive management, particularly high flows.

  5. High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

    Science.gov (United States)

    Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

    2010-03-29

    A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

  6. Double optical gating

    Science.gov (United States)

    Gilbertson, Steve

    The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

  7. On the gate of Arctic footsteps: Doors open to foreign high schools

    Science.gov (United States)

    Manno, C.; Pecchiar, I.

    2012-12-01

    With the increased attention on the changing Arctic Region effective science education, outreach and communication need to be higher priorities within the scientific communities. In order to encourage the dissemination of polar research at educational levels foreign high school students and teachers were visiting Tromso University for a week. The project highlights the role of the universities as link between research and outreach. The first aim of this project was to increase awareness of foreign schools on major topics concerning the Arctic issues (from the economic/social to the environmental/climatic point of view). Forty three Italian high school students were involved in the laboratory activities running at the UiT and participated in seminars. Topics of focus were Ocean Acidification, Global Warming and the combined effects with other anthropogenic stressors. During their stay, students interviewed several scientists in order to allow them to edit a "visiting report" and to elaborate all the material collected. Back in Italy they performed an itinerant exhibition (presentation of a short movie, posters, and pictures) in various Italian schools in order to pass on their Arctic education experience. The project highlights the role of University as communicator of "climate related issues" in the international frame of the "new generation" of students.

  8. Grouting of karstic arch dam foundation

    Energy Technology Data Exchange (ETDEWEB)

    Young, J.; Rigbey, S. [Acres International, Niagara Falls, ON (Canada)

    2002-07-01

    A 200 m high arch dam and a 2000 MW underground power house complex is under development in the Middle East. The project is located in a highly seismic area in rugged, mountainous terrain. The arch dam is constructed on good quality limestone and dolomitic limestone rock mass, but it contains several zones of disturbed or sheared rock. The basement rock is slightly karstic with hydraulic conductivities in the order of 100 Lugeons. In order to get a satisfactory foundation surface for the dam, it will be necessary to excavate extensively and backfill with concrete. Because of the presence of many clay infilled cavities and fractures, geotechnicians are considering the installation of a multiple row grout curtain to a depth of 150 m below the dam foundation to ensure adequate seepage and uplift parameters when the reservoir is impounded. Initial grouting water pressure test results suggested that the grouting and drainage curtain should be extended to the left abutment beyond the current design. However, when horizontal slide models of the dam abutment were developed using the finite element program SEEPW, it was shown that there is no benefit to extending the length of grout curtains unless they are tied to an area of much lower hydraulic conductivity much deeper in the abutment. 1 tab., 5 figs.

  9. Wynoochee Dam Foundation Report

    Science.gov (United States)

    1988-01-01

    schists and in propylitized andesite volcanic rocks. Tests on chlorite-bearing graywackes (Lumni Island and Robe Quarry, Seattle District) and... propylitized chlorite-bearing andesites (Blue River and Lookout Point Dams, Portland District) have shown these rocks to be durable materials with only minor

  10. High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

    Science.gov (United States)

    Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

  11. Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2012-10-30

    We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

  12. A gate drive circuit for gate-turn-off (GTO) devices in series stack

    International Nuclear Information System (INIS)

    Despe, O.

    1999-01-01

    A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

  13. High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

    International Nuclear Information System (INIS)

    Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

    1993-01-01

    The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

  14. The fabrication of a back-gated high electron mobility transistor - a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

    International Nuclear Information System (INIS)

    Linfield, E.H.; Jones, G.A.C.; Ritchie, D.A.; Thompson, J.H.

    1993-01-01

    A new technique for the fabrication of GaAs/AlGaAs back-gated high electron mobility transistors (HEMTs) is described in this paper. First we demonstrate that a dose of > 2 x 10 13 cm -2 Ga ions at an energy of 10 keV can be used to damage a 67 nm n + GaAs layer, rendering the implanted regions non-conducting. After implantation the epilayer has a 4 K sheet resistivity which is increased by a factor of ∼ 10 7 when compared with the original unimplanted value. This isolation procedure is then used to form a patterned back-gated HEMT by MBE regrowth on top of an in situ ion-implanted n + GaAs layer. The resulting structure is designed so that the back gate is rendered highly resistive under the regions where the ohmic contacts to the two-dimensional electron gas (2DEG) are formed, thus making shallow ohmic contacts unnecessary. The results obtained characteristic of a high-quality 2DEG with mobility limited by remote ionized impurity scattering. This technique can therefore be used as a means of controlling the 2DEG carrier concentration, whilst leaving the surface of the HEMT structure free for conventional lithographic processing. (Author)

  15. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

    2014-08-15

    A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  16. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Directory of Open Access Journals (Sweden)

    Qi Liu

    2014-08-01

    Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  17. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang, E-mail: yiqiang-chen@hotmail.com; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei [Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The 5th Electronics Research Institute of the Ministry of Industry and Information Technology, 510610 Guangzhou (China)

    2015-09-28

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  18. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  19. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

    2017-03-01

    In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

  20. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

    2017-12-01

    In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N + pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g  = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

  1. Dam risk reduction study for a number of large tailings dams in Ontario

    Energy Technology Data Exchange (ETDEWEB)

    Verma, N. [AMEC Earth and Environmental Ltd., Mississauga, ON (Canada); Small, A. [AMEC Earth and Environmental Ltd., Fredericton, NB (Canada); Martin, T. [AMEC Earth and Environmental, Burnaby, BC (Canada); Cacciotti, D. [AMEC Earth and Environmental Ltd., Sudbury, ON (Canada); Ross, T. [Vale Inco Ltd., Sudbury, ON (Canada)

    2009-07-01

    This paper discussed a risk reduction study conducted for 10 large tailings dams located at a central tailings facility in Ontario. Located near large industrial and urban developments, the tailings dams were built using an upstream method of construction that did not involve beach compaction or the provision of under-drainage. The study provided a historical background for the dam and presented results from investigations and instrumentation data. The methods used to develop the dam configurations were discussed, and remedial measures and risk assessment measures used on the dams were reviewed. The aim of the study was to address key sources of risk, which include the presence of high pore pressures and hydraulic gradients; the potential for liquefaction; slope instability; and the potential for overtopping. A borehole investigation was conducted and piezocone probes were used to obtain continuous data and determine soil and groundwater conditions. The study identified that the lower portion of the dam slopes were of concern. Erosion gullies could lead to larger scale failures, and elevated pore pressures could lead to the risk of seepage breakouts. It was concluded that remedial measures are now being conducted to ensure slope stability. 6 refs., 1 tab., 6 figs.

  2. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    Science.gov (United States)

    Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

    2007-09-01

    Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

  3. High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

    International Nuclear Information System (INIS)

    Xia, D X; Xu, J B

    2010-01-01

    Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

  4. Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

    Science.gov (United States)

    Lee, Ching-Ting; Wang, Chun-Chi

    2018-04-01

    To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

  5. Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.

    Science.gov (United States)

    Tulip, Fahmida S; Eteshola, Edward; Desai, Suchita; Mostafa, Salwa; Roopa, Subramanian; Evans, Boyd; Islam, Syed Kamrul

    2014-06-01

    Monokine induced by interferon gamma (MIG/CXCL9) is used as an immune biomarker for early monitoring of transplant or allograft rejection. This paper demonstrates a direct electrical, label-free detection method of recombinant human MIG with anti-MIG IgG molecules in physiologically relevant buffer environment. The sensor platform used is a biologically modified GaN-based high electron mobility transistor (HEMT) device. Biomolecular recognition capability was provided by using high affinity anti-MIG monoclonal antibody to form molecular affinity interface receptors on short N-hydroxysuccinimide-ester functionalized disulphide (DSP) self-assembled monolayers (SAMs) on the gold sensing gate of the HEMT device. A floating gate configuration has been adopted to eliminate the influences of external gate voltage. Preliminary test results with the proposed chemically treated GaN HEMT biosensor show that MIG can be detected for a wide range of concentration varying from 5 ng/mL to 500 ng/mL.

  6. Simulating potential structural and operational changes for Detroit Dam on the North Santiam River, Oregon, for downstream temperature management

    Science.gov (United States)

    Buccola, Norman L.; Rounds, Stewart A.; Sullivan, Annett B.; Risley, John C.

    2012-01-01

    Detroit Dam was constructed in 1953 on the North Santiam River in western Oregon and resulted in the formation of Detroit Lake. With a full-pool storage volume of 455,100 acre-feet and a dam height of 463 feet, Detroit Lake is one of the largest and most important reservoirs in the Willamette River basin in terms of power generation, recreation, and water storage and releases. The U.S. Army Corps of Engineers operates Detroit Dam as part of a system of 13 reservoirs in the Willamette Project to meet multiple goals, which include flood-damage protection, power generation, downstream navigation, recreation, and irrigation. A distinct cycle in water temperature occurs in Detroit Lake as spring and summer heating through solar radiation creates a warm layer of water near the surface and isolates cold water below. Controlling the temperature of releases from Detroit Dam, therefore, is highly dependent on the location, characteristics, and usage of the dam's outlet structures. Prior to operational changes in 2007, Detroit Dam had a well-documented effect on downstream water temperature that was problematic for endangered salmonid fish species, releasing water that was too cold in midsummer and too warm in autumn. This unnatural seasonal temperature pattern caused problems in the timing of fish migration, spawning, and emergence. In this study, an existing calibrated 2-dimensional hydrodynamic water-quality model [CE-QUAL-W2] of Detroit Lake was used to determine how changes in dam operation or changes to the structural release points of Detroit Dam might affect downstream water temperatures under a range of historical hydrologic and meteorological conditions. The results from a subset of the Detroit Lake model scenarios then were used as forcing conditions for downstream CE-QUAL-W2 models of Big Cliff Reservoir (the small reregulating reservoir just downstream of Detroit Dam) and the North Santiam and Santiam Rivers. Many combinations of environmental, operational, and

  7. INDIRECT UPSTREAM EFFECTS OF DAMS: CONSEQUENCES OF MIGRATORY CONSUMER EXTIRPATION IN PUERTO RICO

    Science.gov (United States)

    EFFIE A. GREATHOUSE; CATHERINE M. PRINGLE; WILLIAM H. MCDOWELL; JEFF G. HOLMQUIST

    2006-01-01

    Large dams degrade the integrity of a wide variety of ecosystems, yet direct downstream effects of dams have received the most attention from ecosystem managers and researchers. We investigated indirect upstream effects of dams resulting from decimation of migratory freshwater shrimp and fish populations in Puerto Rico, USA, in both high- and low-gradient streams. In...

  8. Expansion at Olympic Dam

    International Nuclear Information System (INIS)

    Lewis, C.

    1997-01-01

    The Olympic Dam orebody is the 6th largest copper and the single largest uranium orebody in the world. Mine production commenced in June 1988, at an annual production rate of around 45,000 tonnes of copper and 1,000 tonnes of uranium. Western Mining Corporation announced in 1996 a proposed $1.25 billion expansion of the Olympic Dam operation to raise the annual production capacity of the mine to 200,000 tonnes of copper, approximately 3,700 tonnes of uranium, 75,000 ounces of gold and 950,000 ounces of silver by 2001. Further optimisation work has identified a faster track expansion route, with an increase in the capital cost to $1.487 billion but improved investment outcome, a new target completion date of end 1999, and a new uranium output of 4,600 tonnes per annum from that date

  9. Thermal monitoring of leakage through Karkheh embankment dam, Iran

    Energy Technology Data Exchange (ETDEWEB)

    Mirghasemi, A.A.; Bagheri, S.M. [Tehran Univ., Tehran (Iran, Islamic Republic of). Dept. of Civil Engineering; Heidarzadeh, M. [Tehran Univ., Tehran (Iran, Islamic Republic of). Dept. of Civil Engineering]|[Mahab Ghodss Consulting Engineers, Tehran (Iran, Islamic Republic of)

    2007-07-01

    A newly developed and simple method for monitoring seepage in embankment dams was presented. The method of temperature measurement is based on the fact that a change in permeability results in a change in seepage flow, thereby causing a temperature change that can be readily measured in the dam body and foundation. In this study, water leaking through the Karkheh embankment dam was thermally analyzed to determine a pattern and amount of water seepage. With nearly 33 million cubic metres of fill, the Karkheh earth and rock-fill dam is the largest dam in Iran. Construction was completed in 2000. The thermal processes in the embankment were studied due to the dam's complex thermo-hydraulic behaviour. Thermal data was collected and analyzed during construction and operation of the dam. This paper presented the temperature variations for the different dam zones, including core, upstream shell, downstream shell, upstream filter, downstream filter and the plastic concrete cut-off wall. It was determined that the clay core works very well as an impermeable curtain. It was also shown that temperature variations of the Karkheh reservoir water is seasonal, and decrease as water depth increases. The reservoir water temperature remains constant beyond depths of 60 metres. The thermal behaviour of the core is not similar to that of the reservoir, indicating a very low value of seepage through the core. The pattern of temperature variations in the upstream shell in the left abutment is harmonic, while in the right abutment it is not harmonic. A harmonic pattern of temperature variation exists in some aquifers of the dam foundation, indicating high seepage through these aquifers. The Karkheh dam cut-off wall performs satisfactorily. It was determined that one dimensional equations for estimating seepage cannot be applied for the Karkheh dam. 17 refs., 11 figs.

  10. Dam spills and fishes

    International Nuclear Information System (INIS)

    1996-01-01

    This short paper reports the main topics discussed during the two days of the annual colloquium of the Hydro-ecology Committee of EdF. The first day was devoted to the presentation of the joint works carried out by EdF, the Paul-Sabatier University (Toulouse), the Provence St-Charles University (Marseille), the ENSAT (Toulouse) and the CEMAGREF (Lyon and Aix-en-Provence) about the environmental impact of dam spills on the aquatic flora and fauna downstream. A synthesis and recommendations were presented for the selection and characterization of future sites. The second day was devoted to the hydro-ecology study of the dam reservoir of Petit-Saut (French Guyana): water reoxygenation, quality evolution, organic matter, plankton, invertebrates and fishes. The 134 French dams concerned by water spills have been classified according to the frequency of spills, the variations of flow rates created, and their impacts on fishing, walking, irrigation, industry, drinking water, navigation, bathing. Particular studies on different sites have demonstrated the complexity of the phenomena involved concerning the impact on the ecosystems and the water quality. (J.S.)

  11. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  12. Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

    International Nuclear Information System (INIS)

    Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

    2015-01-01

    This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high–κ YbTi x O y gate dielectrics for indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTi x O y IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm 2 V −1 s −1 , a high I on /I off ratio of 2.8 × 10 7 , and a low subthreshold swing of 176 mV dec. −1 , relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTi x O y dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTi x O y IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions. (paper)

  13. Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2007-02-01

    In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

  14. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  15. Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

    Science.gov (United States)

    Wang, Kai; Ou, Hai; Chen, Jun

    2015-06-01

    Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

  16. Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

    International Nuclear Information System (INIS)

    Wang, Kai; Ou, Hai; Chen, Jun

    2015-01-01

    Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The 'smart' pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients. (paper)

  17. Thermal effects of dams in the Willamette River basin, Oregon

    Science.gov (United States)

    Rounds, Stewart A.

    2010-01-01

    where the annual maximum temperature typically occurred in September or October. Without-dam temperatures also tended to have more daily variation than with-dam temperatures. Examination of the without-dam temperature estimates indicated that dam sites could be grouped according to the amount of streamflow derived from high-elevation, spring-fed, and snowmelt-driven areas high in the Cascade Mountains (Cougar, Big Cliff/Detroit, River Mill, and Hills Creek Dams: Group A), as opposed to flow primarily derived from lower-elevation rainfall-driven drainages (Group B). Annual maximum temperatures for Group A ranged from 15 to 20 degree(s)C, expressed as the 7-day average of the daily maximum (7dADM), whereas annual maximum 7dADM temperatures for Group B ranged from 21 to 25 degrees C. Because summertime stream temperature is at least somewhat dependent on the upstream water source, it was important when estimating without-dam temperatures to use correlations to sites with similar upstream characteristics. For that reason, it also is important to maintain long-term, year-round temperature measurement stations at representative sites in each of the Willamette River basin's physiographic regions. Streamflow and temperature estimates downstream of the major dam sites and throughout the Willamette River were generated using existing CE-QUAL-W2 flow and temperature models. These models, originally developed for the Willamette River water-temperature Total Maximum Daily Load process, required only a few modifications to allow them to run under the greatly reduced without-dam flow conditions. Model scenarios both with and without upstream dams were run. Results showed that Willamette River streamflow without upstream dams was reduced to levels much closer to historical pre-dam conditions, with annual minimum streamflows approximately one-half or less of dam-augmented levels. Thermal effects of the dams varied according to the time of year, from cooling in mid-summer to warm

  18. Sinkhole investigated at B.C. Hydro's Bennett Dam

    International Nuclear Information System (INIS)

    Anon.

    1996-01-01

    The cause of a sinkhole which appeared in a roadway crossing an earth filled dam in B. C., was discussed. The hole measured 6 ft. across and 20 ft. deep, and occurred in B.C. Hydro's W.A.C. Bennett Dam which measures 600 ft. high, 2,600 ft. wide at the base and 35 ft. wide at the crest. The cause of the sinkhole is not known, but it is believed that a weakness in the dam may have found its way to the surface via a pipe connected to a bedrock settlement gauge buried within the dam. Sonar and ground penetrating radar were used to examine the area. The hole has been filled with gravel and monitoring continues. Experts do not anticipate immediate risk of dam failure. 1 fig

  19. Seepage problem in Papan dam and the treatment

    Energy Technology Data Exchange (ETDEWEB)

    Sharghi, A. [JTMA Co., Tehran (Iran, Islamic Republic of); Palassi, M. [Tehran Univ. (Iran, Islamic Republic of). Dept. of Civil Engineering

    2003-07-01

    The Papan dam in the Krygyz Republic is 97 metres high. It is located in the Osh Oblast, within a narrow and steep sided gorge on the Ak-Bura River, approximately 20 kilometres south of the City of Osh. The impoundment of the dam revealed large inflows of water to the downstream dam through the upper half of the dam and through the joints in the right abutment. A number of options were considered before a treatment method was selected. The causes of the leakage were poor grouting, and joints and fissures in the abutment. The remedial process involved the use of a plastic concrete cutoff wall extended from the crest of the dam to a depth of approximately 70 metres, in addition to the use of a grouting curtain in the right abutment. 2 figs.

  20. Determining The Water Quality of Maruf Dam (Boyabat–Sinop

    Directory of Open Access Journals (Sweden)

    Ekrem MUTLU

    2017-06-01

    Full Text Available In this study, the preliminary findings obtained from 3 sampling points, which represent the whole, on Maruf Irrigation Dam, which is located in Boyabat district of Sinop province, for 12 months between September 2015 and August 2016 were examined. The parameters monitored are temperature, dissolved oxygen, pH, electrical conductivity, total hardness, total alkalinity, chemical oxygen demand, biological oxygen demand, and dissolved anions and cations (sodium, potassium, calcium, magnesium, ammonium, nitrate, phosphate, chloride, sulfate, and sulfite. Because of its low dissolved ionic matter content, Maruf Dam was characterized as an alkali dam with mid-hard water and low electrical conductivity. In terms of parameters A and B of Surface Water Quality Management Regulation, the dam is considered “high-quality” and “unpolluted”. Besides the irrigation purposes, for which the barrage was constructed, the dam can also be used for aquaculture, animal breeding, and farming needs.

  1. Some aspects in the legal regulation of the dams

    International Nuclear Information System (INIS)

    Tancev, Ljubomir

    1996-01-01

    In order to ensure high quality and low cost design and building of dams and appurtenant structures, as well as safe exploitation, it is obvious to have appropriate legislation. Keeping in mind that the dams are unique structures, for the design stage the legislation should be less strong. For the next phases - building, maintenance and exploitation - detail and rigorous legislation is recommended. It is emphasised that the engineers should have more freedom designing the dams, but they should be obvious to apply the most recent achievement in the field of the dam design and construction. For illustration, some aspects of three important questions are discussed - 1) the choice of maximum flood discharge, 2) the application of new materials and construction methods and 3) the application of modern methods for static and dynamic analysis of dams. (Author)

  2. 78 FR 34258 - Safety Zone; Salvage Operations at Marseilles Dam; Illinois River

    Science.gov (United States)

    2013-06-07

    ... Temporary Final Rule RNA Regulated Navigation Area A. Regulatory History and Information On April 18, 2013... 3, 2013 the Coast Guard established an RNA on the Illinois River from the gates of the Dresden Lock and Dam at Mile Marker 271.4 to Mile Marker 240.0 (USCG-2013-0344). This RNA was established to ensure...

  3. Comparison of prospective electrocardiography-gating high-pitch mode and without electrocardiography-synchronization high-pitch mode acquisition for the image quality and radiation doses of the aortic using dual-source CT

    International Nuclear Information System (INIS)

    Li Jian; Huan Yi; Zhao Hongliang; Wang Ying; Liu Ying; Wei Mengqi; Shi Mingguo; Zheng Minwen

    2013-01-01

    Objective: To evaluate the application of prospective ECG-gating Flash spiral scan mode dual-source CT in aortography, and compare it's image quality and radiation dose with without ECG-synchronization high-pitch spiral scanning mode. Methods: Fifty consecutive patients (Group A) with suspected aortic dissection or after operations for the aortic dissection were scanned with prospective ECG-gated high-pitch scan and another 50 consecutive patients (Group B) were analyzed by non-ECG-gated high-pitch scan. Image quality of the aortic was assessed by two independent readers. Image noise was measured, radiation dose estimates were calculated. The imaging quality of the aortic and the radiation dose were compared with Mann-whitney U and t test. Results: The average image quality score [(1.18 ± 0.40) in group A and (1.23 ± 0.31) in group B] showed no significant difference between group A and group B (U = 1.20, P = 0.23). The mean radiation dose of group A was lower than that of group B [(1.49 ± 0.38) mSv in group A, (2.79 ± 0.54) mSv in group B, t = 13.677, P < 0.05]. Conclusion: Prospective ECG-gated dual source CT Flash spiral scanning with low radiation dose and good image quality in the aortic dissection with high value of clinical application. (authors)

  4. Abstracts and electronic proceedings of the Canadian Dam Association's 2009 annual conference : protecting people, property and the environment; Resumes et actes electroniques du congres annuel 2009 de l'Association canadienne des barrages : proteger les personnes, les biens et l'environnement

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2009-07-01

    The Canadian Dam Association (CDA) is the Canadian leader in advancing knowledge and practices related to dams. This annual conference provided a professional development opportunity on a broad range of dam-related topics. The technical sessions addressed issues such as adaptation to climate change; the application of safety design for discharge facilities; risks associated with rockfill dams; underlying problems of design floods and dam safety; guidelines for public safety around dams and psychology of safety; the dam safety review process; and run-of-river hydro dams. During the related sessions, Canadian members of the International Committee on Large Dams (ICOLD) commented on international practice and developments. The workshops focused on incident investigations; reliability-centered maintenance; flow discharge gate reliability; piping damage to till core dams; and mining dams. The sessions of the conference were entitled: design floods and dam safety; dam breach flood modelling; dam safety management; public safety; mining dams; flood handling and modelling; case studies; ice loads on structures; seepage control; dam safety reviews and remediation; remote sensing for dams; protecting the environment; seismic hazard and response modelling; and the performance of dams in 2008 earthquake in Sichuan, China. The conference featured 61 presentations, of which 59 have been catalogued separately for inclusion in this database. refs., tabs., figs.

  5. The Political Ecology of Chinese Large Dams in Cambodia: Implications, Challenges and Lessons Learnt from the Kamchay Dam

    Directory of Open Access Journals (Sweden)

    Giuseppina Siciliano

    2016-09-01

    Full Text Available Given the opportunities offered by foreign investment in energy infrastructure mostly by Chinese firms, the Government of Cambodia is giving high priority to developing hydropower resources for reducing energy poverty and powering economic growth. Using a “Political ecology of the Asian drivers” framework, this paper assesses China’s involvement in the development of large dams’ in Cambodia and its impacts on the access of natural resources such as water and energy by dam builders, local communities and the government. This analysis is based on 61 interviews and 10 focus group discussions with affected communities, institutional actors, Chinese dam builders and financiers in relation to the first large Chinese dam built in Cambodia: the Kamchay dam. Based on the results of the analysis this paper makes recommendations on how to improve the planning, implementation and governance of future large dams in Cambodia.

  6. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  7. Noise Gating Solar Images

    Science.gov (United States)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  8. Odelouca Dam Construction: Numerical Analysis

    OpenAIRE

    Brito, A.; Maranha, J. R.; Caldeira, L.

    2012-01-01

    Odelouca dam is an embankment dam, with 76 m height, recently constructed in the south of Portugal. It is zoned with a core consisting of colluvial and residual schist soil and with soil-rockfill mixtures making up the shells (weathered schist with a significant fraction of coarse sized particles). This paper presents a numerical analysis of Odelouca Dam`s construction. The material con-stants of the soil model used are determined from a comprehensive testing programme carried out in the C...

  9. Health impacts of large dams

    International Nuclear Information System (INIS)

    Lerer, L.B.

    1999-01-01

    Large dams have been criticized because of their negative environmental and social impacts. Public health interest largely has focused on vector-borne diseases, such as schistosomiasis, associated with reservoirs and irrigation projects. Large dams also influence health through changes in water and food security, increases in communicable diseases, and the social disruption caused by construction and involuntary resettlement. Communities living in close proximity to large dams often do not benefit from water transfer and electricity generation revenues. A comprehensive health component is required in environmental and social impact assessments for large dam projects

  10. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Science.gov (United States)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  11. Dam Break Analysis of Embankment Dams Considering Breach Characteristics

    Directory of Open Access Journals (Sweden)

    Abolfazl Shamsaei

    2004-05-01

    Full Text Available The study of dam's break, needs the definition of various parameters such as the break cause, its type, its dimension and the duration of breach development. The precise forecast for different aspects of the breach is one of the most important factors for analyzing it in embankment dam. The characteristics of the breach and determination of their vulnerability has the most effect on the waves resulting from dam break. Investigating, about the parameters of the breach in "Silveh" earth dam have been determined using the suitable model. In Silve dam a trapezoid breach with side slope z=0.01m and the average base line b=80m was computed. The duration of the breaches development is 1.9 hour. Regarding the above results and the application of DAM Break software the consequences of the probable break of the dam was determined. The analysis of the results of water covering of the city of Piranshahr located 12km from silve dam confirms that in 3 hours the water will reach the height (level of 1425 meters.

  12. Alteration of stream temperature by natural and artificial beaver dams.

    Science.gov (United States)

    Weber, Nicholas; Bouwes, Nicolaas; Pollock, Michael M; Volk, Carol; Wheaton, Joseph M; Wathen, Gus; Wirtz, Jacob; Jordan, Chris E

    2017-01-01

    Beaver are an integral component of hydrologic, geomorphic, and biotic processes within North American stream systems, and their propensity to build dams alters stream and riparian structure and function to the benefit of many aquatic and terrestrial species. Recognizing this, beaver relocation efforts and/or application of structures designed to mimic the function of beaver dams are increasingly being utilized as effective and cost-efficient stream and riparian restoration approaches. Despite these verities, the notion that beaver dams negatively impact stream habitat remains common, specifically the assumption that beaver dams increase stream temperatures during summer to the detriment of sensitive biota such as salmonids. In this study, we tracked beaver dam distributions and monitored water temperature throughout 34 km of stream for an eight-year period between 2007 and 2014. During this time the number of natural beaver dams within the study area increased by an order of magnitude, and an additional 4 km of stream were subject to a restoration manipulation that included installing a high-density of Beaver Dam Analog (BDA) structures designed to mimic the function of natural beaver dams. Our observations reveal several mechanisms by which beaver dam development may influence stream temperature regimes; including longitudinal buffering of diel summer temperature extrema at the reach scale due to increased surface water storage, and creation of cool-water channel scale temperature refugia through enhanced groundwater-surface water connectivity. Our results suggest that creation of natural and/or artificial beaver dams could be used to mitigate the impact of human induced thermal degradation that may threaten sensitive species.

  13. Stability of earth dam with a vertical core

    Directory of Open Access Journals (Sweden)

    Orekhov Vyacheslav Valentinovich

    2016-01-01

    Full Text Available Earth dam with impervious element in the form of asphaltic concrete core is currently the most promising type of earth dams (due to simple construction technology and universal service properties of asphaltic concrete and is widely used in the world. However, experience in the construction and operation of high dams (above 160 m is not available, and their work is scarcely explored. In this regard, the paper discusses the results of computational prediction of the stress-strain state and stability of a high earth dam (256 m high with the core. The authors considered asphaltic concrete containing 7 % of bitumen as the material of the core. Gravel was considered as the material of resistant prisms. Design characteristics of the rolled asphaltic concrete and gravel were obtained from the processing of the results of triaxial tests. The calculations were performed using finite element method in elastoplastic formulation and basing on the phased construction of the dam and reservoir filling. The research shows, that the work of embankment dam with vertical core during filling of the reservoir is characterized by horizontal displacement of the lower resistant prism in the tailrace and the formation of a hard wedge prism descending along the core in the upper resistant prism. The key issue of the safety assessment is to determine the safety factor of the overall stability of the dam, for calculation of which the destruction of the earth dam is necessary, which can be done by reducing the strength properties of the dam materials. As a results of the calculations, the destruction of the dam occurs with a decrease in the strength characteristics of the materials of the dam by 2.5 times. The dam stability depends on the stability of the lower resistant prism. The destruction of its slope occurs on the classical circular-cylindrical surface. The presence of a potential collapse surface in the upper resistant prism (on the edges of the descending wedge does

  14. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  15. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  16. A highly sensitive protocol for the determination of Hg(2+) in environmental water using time-gated mode.

    Science.gov (United States)

    Huang, Dawei; Niu, Chenggang; Zeng, Guangming; Wang, Xiaoyu; Lv, Xiaoxiao

    2015-01-01

    In this paper, a sensitive time-gated fluorescent sensing strategy for mercury ions (Hg(2+)) monitoring is developed based on Hg(2+)-mediated thymine (T)-Hg(2+)-T structure and the mechanism of fluorescence resonance energy transfer from Mn-doped CdS/ZnS quantum dots to graphene oxide. The authors employ two T-rich single-stranded DNA (ssDNA) as the capture probes for Hg(2+), and one of them is modified with Mn-doped CdS/ZnS quantum dots. The addition of Hg(2+) makes the two T-rich ssDNA hybrids with each other to form stable T-Hg(2+)-T coordination chemistry, which makes Mn-doped CdS/ZnS quantum dots far away from the surface of graphene oxide. As a result, the fluorescence signal is increased obviously compared with that without Hg(2+). The time-gated fluorescence intensities are linear with the concentrations of Hg(2+) in the range from 0.20 to 10 nM with a limit of detection of 0.11 nM. The detection limit is much lower than the U.S. Environmental Protection Agency limit of the concentration of Hg(2+) for drinking water. The time-gated fluorescent sensing strategy is specific for Hg(2+) even with interference by other metal ions based on the results of selectivity experiments. Importantly, the proposed sensing strategy is applied successfully to the determination of Hg(2+) in environmental water samples. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  18. An automated wide-field time-gated optically sectioning fluorescence lifetime imaging multiwell plate reader for high-content analysis of protein-protein interactions

    Science.gov (United States)

    Alibhai, Dominic; Kumar, Sunil; Kelly, Douglas; Warren, Sean; Alexandrov, Yuriy; Munro, Ian; McGinty, James; Talbot, Clifford; Murray, Edward J.; Stuhmeier, Frank; Neil, Mark A. A.; Dunsby, Chris; French, Paul M. W.

    2011-03-01

    We describe an optically-sectioned FLIM multiwell plate reader that combines Nipkow microscopy with wide-field time-gated FLIM, and its application to high content analysis of FRET. The system acquires sectioned FLIM images in fluorescent protein. It has been applied to study the formation of immature HIV virus like particles (VLPs) in live cells by monitoring Gag-Gag protein interactions using FLIM FRET of HIV-1 Gag transfected with CFP or YFP. VLP formation results in FRET between closely packed Gag proteins, as confirmed by our FLIM analysis that includes automatic image segmentation.

  19. Electro-Thermo-Mechanical Analysis of High-Power Press-Pack Insulated Gate Bipolar Transistors under Various Mechanical Clamping Conditions

    DEFF Research Database (Denmark)

    Hasmasan, Adrian Augustin; Busca, Cristian; Teodorescu, Remus

    2014-01-01

    With the continuously increasing demand for energy and the limited supply of fossil fuels, renewable power sources are becoming ever more important. Knowing that future energy demand will grow, manufacturers are increasing the size of new wind turbines (WTs) in order to reduce the cost of energy...... production. The reliability of the components has a large impact on the overall cost of a WT, and press-pack (PP) insulated gate bipolar transistors (IGBTs) could be a good solution for future multi-megawatt WTs because of advantages like high power density and reliability. When used in power converters, PP...

  20. A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs

    International Nuclear Information System (INIS)

    Wang Wei; Li Na; Ren Yuzhou; Li Hao; Zheng Lifen; Li Jin; Jiang Junjie; Chen Xiaoping; Wang Kai; Xia Chunping

    2013-01-01

    The effects of linear doping profile near the source and drain contacts on the switching and high-frequency characteristics for conventional single-material-gate CNTFET (C-CNTFET) and hetero-material-gate CNTFET (HMG-CNTFET) have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations. The simulation results show that at a CNT channel length of 20 nm with chirality (7, 0), the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects (SCEs) in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications. (semiconductor devices)

  1. Excavation of the Surikamigawa dam diversion tunnel. Surikamigawa dam karihaisui tunnel kantsu

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, T.; Konno, T. (Ministry of Construction, Tokyo (Japan))

    1994-04-01

    A bypass tunnel construction has been completed at the Surikamigawa dam (Japan). This paper describes the summary of the construction. The full-swing dam construction work is scheduled to begin in 1995. The soils distributed near the dam site consist of lapillus tuff containing andesite-based light stones and tuff-based conglomerates containing large gravels. Excavation of the dam diversion tunnel has used a blasting method, and the tunnel construction has adopted an automatic tunnel cross section marking system and a non-electric explosion method. This marking system is a system to irradiate a laser beam onto the facing to depict excavation lines that realizes labor saving and high-accuracy excavation. The error at the tunnel completion was found 20 mm. The non-electric explosion method ignites a coated explosive layer with an impact wave, which is electrostatically safe, and reduces blasting vibration. Electric detonators have also been used because of using ANFO explosives. The result obtained from measurements of inner space displacement necessary for the blasting process has indicated that the area near the dam site consists of stable mountains. 6 figs., 4 tabs.

  2. Evaluatie Dam tot Damloop 2014

    NARCIS (Netherlands)

    Deutekom-Baart de la Faille, Marije

    In het weekend van 20 en 21 september 2014 vond de 30ste editie van de Dam tot Damloop plaats. Onderzoekers van de Hogeschool van Amsterdam en Hogeschool Inholland hebben bij de Dam tot Damloop een evaluatieonderzoek uitgevoerd met als doel het vinden van aanknopingspunten voor het structureel

  3. War damages and reconstruction of Peruca dam

    International Nuclear Information System (INIS)

    Nonveiller, E.; Sever, Z.

    1999-01-01

    The paper describes the heavy damages caused by blasting in the Peruca rockfill dam in Croatia in January 1993. Complete collapse of the dam by overtopping was prevented through quick action of the dam owner by dumping clayey gravel on the lowest sections of the dam crest and opening the bottom outlet of the reservoir, thus efficiently lowering the water level. After the damages were sufficiently established and alternatives for restoration of the dam were evaluated, it was decided to construct a diaphragm wall through the damaged core in the central dam part as the impermeable dam element and to rebuild the central clay core at the dam abutments. Reconstruction works are described

  4. High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Krost, Alois; Hauser, Marcus J B

    2014-01-01

    The dynamics of cells of the slime mould Physarum polycephalum are investigated with a planar AlGaN/GaN high electron mobility transistor (HEMT) without any gate metallization. The source–drain contacts are used in a two-electrode arrangement whereas the free gate surface area is occupied by the Physarum cell. In order to understand the measured signals, basic properties of the interface between the cell and the HEMT surface were analysed by impedance spectroscopy. At high frequencies the interface impedance is governed by the conductance of the cell due to a direct current through the HEMT/cell interface. The locomotive dynamics of Physarum were recorded by the source–drain impedance at 10 kHz in combination with simultaneous video imaging that monitored the degree of occupancy of the HEMT surface by the cell. A precise correlation was found between the impedance and the coverage of the HEMT surface by the cell. It is observed that the entire region between the contacts is sensitive to the cell activity. Well-resolved cellular oscillations were observed for all measured parameters. Their periods corresponded to the typical periods of the intracellular shuttle streaming of protoplasma in Physarum. This demonstrates that high-frequency impedance measurements with AlGaN/GaN HEMT structures are well suited for the analysis of both the static parts of single Physarum cells as well as of their dynamic behaviour, such as their expansion and motility. (paper)

  5. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  6. Damming evidence : Canada and the World Commission on Dams

    Energy Technology Data Exchange (ETDEWEB)

    Vert, P.; Parkinson, B.

    2003-06-01

    Large hydroelectric projects have been met with strong resistance from affected communities, particularly indigenous groups who have been displaced from their flooded communities following the damming of a river. The World Commission on Dams (WCD) was formed in 1998 to review the effectiveness of large dams and develop internationally acceptable guidelines and standards for large dams or hydro energy projects. The Canadian government, through the Canadian International Development Agency, was one of many governments to fund the WCD. However, the authors argue that despite the financial support, the Canadian government was absent from any effort to follow-up on the recommendations of the WCD. The seven strategic priorities in the decision making process include: (1) gaining public acceptance, (2) comprehensive option assessment of water, energy, food and development needs, (3) addressing existing dams to improve the benefits that can be derived from them, (4) sustaining livelihoods, (5) recognizing the entitlements and sharing benefits, (6) ensuring compliance, and (7) sharing rivers for peace, development and security. This report offers a means to assess planned or existing dams and presents a set of guidelines for good practices linked to the seven strategic priorities. Ten case studies from around the world were presented, including the Three Gorges Dam in China. 154 refs., 3 figs., 3 appendices.

  7. Estimates o the risks associated with dam failure

    Energy Technology Data Exchange (ETDEWEB)

    Ayyaswamy, P.; Hauss, B.; Hseih, T.; Moscati, A.; Hicks, T.E.; Okrent, D.

    1974-03-01

    The probabilities and potential consequences of dam failure in California, primarily due to large earthquakes, was estimated, taking as examples eleven dams having a relatively large population downstream. Mortalities in the event of dam failure range from 11,000 to 260,000, while damage to property may be as high as $720 million. It was assumed that an intensity IX or X earthquake (on the Modified Mercalli Scale) would be sufficient to completely fail earthen dams. Predictions of dam failure were based on the recurrence times of such earthquakes. For the dams studied, the recurrence intervals for an intensity IX earthquake varied between 20 and 800 years; for an intensity X between 50 and 30,000 years. For the Lake Chabot and San Pablo dams (respectively 20, 30 years recurrent earthquake times for a intensity X) the associated consequences are: 34,000 (Lake Chabot) and 30,000 (San Pablo) people killed; damage $140 million and $77 million. Evaculation was found to ameliorate the consequences slightly in most cases because of the short time available. Calculations are based on demography, and assume 10 foot floodwaters will drown all in their path and destroy all one-unit homes in the flood area. Damage estimates reflect losses incurred by structural damage to buildings and do not include loss of income. Hence the economic impact is probably understated.

  8. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    Directory of Open Access Journals (Sweden)

    H. Hussin

    2014-01-01

    Full Text Available We present a simulation study on negative bias temperature instability (NBTI induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2 and hafnium oxide (HfO2 layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated.

  9. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

    Science.gov (United States)

    Yang, Jiancheng; Carey, Patrick; Ren, Fan; Wang, Yu-Lin; Good, Michael L.; Jang, Soohwan; Mastro, Michael A.; Pearton, S. J.

    2017-11-01

    We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/ml. The glass slide approach is attractive for inexpensive cartridge-type sensors.

  10. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  11. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.

    2017-08-01

    The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

  12. Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

    Directory of Open Access Journals (Sweden)

    J. B. Kim

    2012-03-01

    Full Text Available We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs.

  13. Flash flood prediction in large dams using neural networks

    Science.gov (United States)

    Múnera Estrada, J. C.; García Bartual, R.

    2009-04-01

    A flow forecasting methodology is presented as a support tool for flood management in large dams. The practical and efficient use of hydrological real-time measurements is necessary to operate early warning systems for flood disasters prevention, either in natural catchments or in those regulated with reservoirs. In this latter case, the optimal dam operation during flood scenarios should reduce the downstream risks, and at the same time achieve a compromise between different goals: structural security, minimize predictions uncertainty and water resources system management objectives. Downstream constraints depend basically on the geomorphology of the valley, the critical flow thresholds for flooding, the land use and vulnerability associated with human settlements and their economic activities. A dam operation during a flood event thus requires appropriate strategies depending on the flood magnitude and the initial freeboard at the reservoir. The most important difficulty arises from the inherently stochastic character of peak rainfall intensities, their strong spatial and temporal variability, and the highly nonlinear response of semiarid catchments resulting from initial soil moisture condition and the dominant flow mechanisms. The practical integration of a flow prediction model in a real-time system should include combined techniques of pre-processing, data verification and completion, assimilation of information and implementation of real time filters depending on the system characteristics. This work explores the behaviour of real-time flood forecast algorithms based on artificial neural networks (ANN) techniques, in the River Meca catchment (Huelva, Spain), regulated by El Sancho dam. The dam is equipped with three Taintor gates of 12x6 meters. The hydrological data network includes five high-resolution automatic pluviometers (dt=10 min) and three high precision water level sensors in the reservoir. A cross correlation analysis between precipitation data

  14. Olympic Dam Operations

    International Nuclear Information System (INIS)

    Crew, R.J.

    1992-01-01

    The Olympic Dam copper-uranium-gold-silver deposit in South Australia was discovered in 1975. The Mine is located 520 kilometres NNW of Adelaide, in South Australia. Following a six year period of intensive investigation and assessment of all the aspects required for the development of the deposit, the Joint Venturers decided in December, 1985, to proceed with the project. Milling of ore commenced in June 1988 and final products are cathode copper, uranium ore concentrate (yellow cake), and refined gold and silver. Anticipated production, from treating approximately 1.5 million tonnes of ore, in normal production years, is expected to be 45,000 tonnes of copper, 1,600 tonnes of yellow cake (1350 tonnes of Uranium), 25,000 ounces of gold and 500,000 ounces of silver. (orig./HP) [de

  15. Rehabilitation at Olympic Dam

    International Nuclear Information System (INIS)

    Chandler, W.P.; Middleton, B.A.

    1986-01-01

    Rehabilitation work on areas denuded of vegetation during the exploration phase of the Olympic Dam project was used to test various methods for regeneration of vegetation cover in the arid zone. The test work carried out on drill pads and access tracks has indicated that, with adequate site preparation, natural regeneration is the most economical and effective method to ensure post-operational stability of the affected land-forms. An on-going monitoring regime, utilising a computer data base, has been set up to allow year-to-year comparison of rehabilitation effectiveness. The database also provides a catalogue of initial colonising plants and a measure of variations in species diversity with time

  16. Deformation performance of Waba Dam

    Energy Technology Data Exchange (ETDEWEB)

    Salloum, T.; Bhardwaj, V.; Hassan, P. [Ontario Power Generation, Niagara-on-the-Lake, ON (Canada); Cragg, C. [Cragg Consulting Services, Toronto, ON (Canada)

    2009-07-01

    This paper described the performance of the Waba Dam which is being monitored as part of Ontario Power Generation's Dam Safety Program. It described the deformations that have been observed in this 3600 ft long earthfill dam which lies on marine clay in eastern Ontario. An extensive instrumentation program, including foundation settlement gauges, surface monuments, slope inclinometers, load cells and piezometers has been in effect since the construction of the dam in 1975. Significant settlement has occurred at Waba Dam since its construction. Wide berms were provided upstream and downstream beyond the slopes of the main fill to ensure stability of the dyke on the soft clay foundation and the crest elevations were designed to allow for the expected settlement in the foundation which would be overstressed by the dam loading. Based on current settlements, future settlements are predicted based on Asaoka's method. Inclinometer measurements have shown a foundation lateral spreading of 12 in. The lateral versus vertical deformations were found to be comparable to well behaving embankments reported in the literature. These analyses indicate that Waba Dam is performing well and should continue to perform well into the future. 8 refs., 1 tab., 14 figs.

  17. Public safety around dams guidelines

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, T [Canadian Dam Association, Edmonton, AB (Canada)

    2010-07-01

    This presentation discussed Canadian and international initiatives for improving dam safety and described some of the drivers for the development of new Canadian Dam Association (CDA) public safety guidelines for dams. The CDA guidelines were divided into the following 3 principal sections: (1) managed system elements, (2) risk assessment and management, and (3) technical bulletins. Public and media responses to the drownings have called for improved safety guidelines. While the public remains unaware of the hazards of dams, public interaction with dams is increasing as a result of interest in extreme sports and perceived rights of access. Guidelines are needed for dam owners in order to provide due diligence. Various organizations in Canada are preparing technical and public safety dam guidelines. CDA guidelines have also been prepared for signage, booms and buoys, and audible and visual alerts bulletins. Working groups are also discussing recommended practices for spill procedures, spillways and the role of professional engineers in ensuring public safety. Methods of assessing risk were also reviewed. Managed system elements for risk assessment and public interactions were also discussed, and stepped control measures were presented. tabs., figs.

  18. Precise linear gating circuit on integrated microcircuits

    Energy Technology Data Exchange (ETDEWEB)

    Butskii, V.V.; Vetokhin, S.S.; Reznikov, I.V.

    Precise linear gating circuit on four microcircuits is described. A basic flowsheet of the gating circuit is given. The gating circuit consists of two input differential cascades total load of which is two current followers possessing low input and high output resistances. Follower outlets are connected to high ohmic dynamic load formed with a current source which permits to get high amplification (>1000) at one cascade. Nonlinearity amounts to <0.1% in the range of input signal amplitudes of -10-+10 V. Front duration for an output signal with 10 V amplitude amounts to 100 ns. Attenuation of input signal with a closed gating circuit is 60 db. The gating circuits described is used in the device intended for processing of scintillation sensor signals.

  19. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  20. Riparian Vegetation Response to the March 2008 Short-Duration, High-Flow Experiment-Implications of Timing and Frequency of Flood Disturbance on Nonnative Plant Establishment Along the Colorado River Below Glen Canyon Dam

    Science.gov (United States)

    Ralston, Barbara E.

    2010-01-01

    Riparian plant communities exhibit various levels of diversity and richness. These communities are affected by flooding and are vulnerable to colonization by nonnative species. Since 1996, a series of three high-flow experiments (HFE), or water releases designed to mimic natural seasonal flooding, have been conducted at Glen Canyon Dam, Ariz., primarily to determine the effectiveness of using high flows to conserve sediment, a limited resource. These experiments also provide opportunities to examine the susceptibility of riparian plant communities to nonnative species invasions. The third and most recent HFE was conducted from March 5 to 9, 2008, and scientists with the U.S. Geological Survey's Grand Canyon Monitoring and Research Center examined the effects of high flows on riparian vegetation as part of the overall experiment. Total plant species richness, nonnative species richness, percent plant cover, percent organic matter, and total carbon measured from sediment samples were compared for Grand Canyon riparian vegetation zones immediately following the HFE and 6 months later. These comparisons were used to determine if susceptibility to nonnative species establishment varied among riparian vegetation zones and if the timing of the HFE affected nonnative plant establishment success. The 2008 HFE primarily buried vegetation rather than scouring it. Percent nonnative cover did not differ among riparian vegetation zones; however, in the river corridor affected by Glen Canyon Dam operations, nonnative species richness showed significant variation. For example, species richness was significantly greater immediately after and 6 months following the HFE in the hydrologic zone farthest away from the shoreline, the area that represents the oldest riparian zone within the post-dam riparian area. In areas closer to the river channel, tamarisk (Tamarix ramosissima X chinensis) seedling establishment occurred (tamarisk seed production, or in 1986, a year following several

  1. Ni/Au-gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia

    2006-01-01

    A δ-doped In 0.45 Al 0.55 As/In 0.53 Ga 0.47 As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2 % are obtained for a 0.65 x 200 μm 2 gate at 300 K. In addition, the measured f T and f max are 49.1 and 61.7 GHz, respectively.

  2. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey

    2013-07-23

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) highgate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  3. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey; Qaisi, Ramy M.; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

    2013-01-01

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) highgate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  4. Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

    Science.gov (United States)

    Boomer, Kristen; Hammoud, Ahmad

    2015-01-01

    Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

  5. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

    Science.gov (United States)

    Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

    2014-12-24

    We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

  6. National Dam Safety Program. Lakeview Estates Dam (MO 11004), Mississippi - Kaskaskia - St. Louis Basin, Warren County, Missouri. Phase I Inspection Report.

    Science.gov (United States)

    1979-09-01

    ificatiozh Distributon/ Availabilit oe LAKEVIEW ESTATES DAM WARREN COUNTY, MISSOURI MISSOURI INVENTORY NO. 11004 PHASE I INSPECTION REPORT NATIONAL DAM SAFETY...and *impounds less than 1,000 acre-feet of water . Our inspection and evaluation indicates that the spill- way of Lakeview Estates Dam does not meet...not be measured because of high reservoir level, scalloping near the crest and a berm just under the water surface. Limestone riprap in sizes from sand

  7. Proceedings of the Canadian Dam Association's 2006 annual conference: dams: past, present and future

    International Nuclear Information System (INIS)

    2006-01-01

    This conference addressed particular technical challenges regarding the operation of dams with particular focus on best practices for improving dam management and safety. It featured 4 workshops and a technical program led by experts on dams and tailings facilities that addressed topics such as dam construction, design and rehabilitation; dam management in a hydrological uncertainty context; monitoring, instrumentation and maintenance; dam behaviour; dam safety, dam failure and practical approaches to emergency preparedness planning for dam owners; historical aspects and environmental issues and conflicting water use. Recent developments in dam construction were reviewed along with discharge and debris management, tailings dam issues, asset management, seismic issues, public safety, seepage monitoring, flow control, dam rehabilitation, concrete testing, hydrotechnical issues, risk assessment methodology, and dam safety guidelines for extreme flood analyses and their applications. All 80 presentations from this conference have been catalogued separately for inclusion in this database. refs., tabs., figs

  8. High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2017-04-01

    In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

  9. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  10. 7 CFR 1724.55 - Dam safety.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 11 2010-01-01 2010-01-01 false Dam safety. 1724.55 Section 1724.55 Agriculture... § 1724.55 Dam safety. (a) The provisions of this section apply only to RUS financed electric system... for Dam Safety,”(Guidelines), as applicable. A dam, as more fully defined in the Guidelines, is...

  11. Risk Perception Analysis Related To Existing Dams In Italy

    Science.gov (United States)

    Solimene, Pellegrino

    2013-04-01

    In the first part of this work, the progress of Italian National Rules about dams design, construction and operation are presented to highlight the strong connection existing between the promulgation of new decrees, as a consequence of a dam accidents, and the necessity to prevent further loss of lives and goods downstream. Following the Gleno Dam failure (1923), a special Ministerial Committee wrote out the first Regulations and made the proposal to establish, within the High Council of Public Works, a special department that become soon the "Dam Service", with the tasks of control and supervision about construction and operation phases of the dams and their reservoirs. A different definition of tasks and the structure of Dam Service were provided in accordance with law n° 183/1989, which transferred all the technical services to the Office of the Prime Minister; the aim was to join the Dam Office with the Department for National Technical Services, with the objective of increasing the knowledge of the territory and promoting the study on flood propagation downstream in case of operations on bottom outlet or hypothetical dam-break. In fact, population living downstream is not ready to accept any amount of risk because has not a good knowledge of the efforts of experts involved in dam safety, both from the operators and from the safety Authority. So it's important to optimize all the activities usually performed in a dam safety program and improve the emergency planning as a response to people's primary needs and feeling about safety from Civil Protection Authority. In the second part of the work, a definition of risk is provided as the relationship existing between probability of occurrence and loss, setting out the range within to plan for prevention (risk mitigation), thanks to the qualitative assessment of the minimum safety level that is suited to assign funds to plan for Civil Protection (loss mitigation). The basic meaning of the reliability of a zoned

  12. Seepage safety monitoring model for an earth rock dam under influence of high-impact typhoons based on particle swarm optimization algorithm

    Directory of Open Access Journals (Sweden)

    Yan Xiang

    2017-01-01

    Full Text Available Extreme hydrological events induced by typhoons in reservoir areas have presented severe challenges to the safe operation of hydraulic structures. Based on analysis of the seepage characteristics of an earth rock dam, a novel seepage safety monitoring model was constructed in this study. The nonlinear influence processes of the antecedent reservoir water level and rainfall were assumed to follow normal distributions. The particle swarm optimization (PSO algorithm was used to optimize the model parameters so as to raise the fitting accuracy. In addition, a mutation factor was introduced to simulate the sudden increase in the piezometric level induced by short-duration heavy rainfall and the possible historical extreme reservoir water level during a typhoon. In order to verify the efficacy of this model, the earth rock dam of the Siminghu Reservoir was used as an example. The piezometric level at the SW1-2 measuring point during Typhoon Fitow in 2013 was fitted with the present model, and a corresponding theoretical expression was established. Comparison of fitting results of the piezometric level obtained from the present statistical model and traditional statistical model with monitored values during the typhoon shows that the present model has a higher fitting accuracy and can simulate the uprush feature of the seepage pressure during the typhoon perfectly.

  13. Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance

    Science.gov (United States)

    Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.

    2016-08-01

    In this paper, a proposed structure based on asymmetrical double pockets SB-TFET with gate-drain underlap is presented. 2D extensive modeling and simulation, using Silvaco TCAD, were carried out to study the effect of both underlap length and pockets' doping on the transistor performance. It was found that the underlap from the drain side suppresses the ambipolar conduction and doesn't enhance the high-frequency characteristics. The enhancement of the high-frequency characteristics could be realized by increasing the doping of the drain pocket over the doping of the source pocket. An optimum choice was found which gives the conditions of minimum ambipolar conduction, maximum ON current and maximum cut-off frequency. These enhancements render the device more competitive as a nanometer transistor.

  14. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  15. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  16. Dynamic analyzing procedures adopted for concrete-faced rockfill dams in Turkey

    Energy Technology Data Exchange (ETDEWEB)

    Tosun, H. [Dam Safety Association, Ankara (Turkey); Tosun, K. [TVT Hydrotech Bureau, Ankara (Turkey)

    2008-07-01

    A concrete faced rockfill dam (CFRD) has some advantages compared to other embankment types. The advantages include minimal settlement problems through the use of compacted rockfill; increased overall stability of the dam since the water pressure acts on the upstream face; and pore water pressure does not develop in the rockfill zone if it is well designed and constructed. It is thought that well-compacted CFRD has a high resistance to earthquake loading, as based on several factors including acceptable past performance of similar dams. While numerical solutions performed for this type of dams indicate that it is as safe as other embankment dams, their behavior is still questionable when they are subjected to severe seismic loading. This paper outlined the key principals of the dynamic analyzing method adopted for CFRDs in Turkey and summarized the practice of CFRDs with heights ranging from 54 to 135 metres throughout the country. Two-dimensional finite element models were executed to estimate displacements on the crest under the different loadings of earthquake. Dams that were discussed included the Kurtun Dam, the Torul Dam, the Atasu Dam, the Dim Dam, the Gordes Dam, and the Marmaris Dam. The paper also discussed the limitation about permanent settlement provided in the national dam specification and introduced the results obtained from a case study of the Pamukluk Dam located in southern Turkey. Geology and geotechnics as well as the embankment details and materials were discussed. The case study also summarized the selection of seismic parameters and dynamic analyses. 35 refs., 1 tab., 8 figs.

  17. Dworshak Dam impacts assessment and fisheries investigation -- Kokanee depth distribution in Dworshak Reservoir and implications toward minimizing entrainment. Annual progress report, January--December 1994

    International Nuclear Information System (INIS)

    Maiolie, M.A.; Elam, S.

    1996-10-01

    The authors measured the day and night depth distribution of kokanee Oncorhynchus nerka kennerlyi directly upstream of Dworshak Dam from October 1993 to December 1994 using split-beam hydroacoustics. At night most kokanee (70%) were distributed in a diffuse layer about 10 m thick. The depth of the layer varied with the season and ranged from 30 to 40 m deep during winter and from 15 to 25 m deep during summer. Nighttime depth of the kokanee layer during summer roughly corresponded to a zone where water temperatures ranged from 7 C to 12 C. Daytime kokanee distribution was much different with kokanee located in dense schools. Most kokanee (70%) were found in a 5--15 m thick layer during summer. Daytime depth distribution was also shallowest during fall and deepest during winter. Dworshak Dam has structures which can be used for selective water withdrawal and can function in depth ranges that will avoid the kokanee layer. Temperature constraints limit the use of selective withdrawal during the spring, summer, and fall, but in the winter, water is nearly isothermal and the full range of selector gate depths may be utilized. From October 1993 to February 1994, selector gates were positioned to withdraw water from above the kokanee layer. The discharge pattern also changed with more water being released during May and July, and less water being released during fall and winter. A combination of these two changes is thought to have increased kokanee densities to a record high of 69 adults/ha

  18. 2008 High-Flow Experiment at Glen Canyon Dam-Morphologic Response of Eddy-Deposited Sandbars and Associated Aquatic Backwater Habitats along the Colorado River in Grand Canyon National Park

    Science.gov (United States)

    Grams, Paul E.; Schmidt, John C.; Andersen, Matthew E.

    2010-01-01

    The March 2008 high-flow experiment (HFE) at Glen Canyon Dam resulted in sandbar deposition and sandbar reshaping such that the area and volume of associated backwater aquatic habitat in Grand Canyon National Park was greater following the HFE. Analysis of backwater habitat area and volume for 116 locations at 86 study sites, comparing one month before and one month after the HFE, shows that total habitat area increased by 30 percent to as much as a factor of 3 and that volume increased by 80 percent to as much as a factor of 15. These changes resulted from an increase in the area and elevation of sandbars, which isolate backwaters from the main channel, and the scour of eddy return-current channels along the bank where the habitat occurs. Because of this greater relief on the sandbars, backwaters were present across a broader range of flows following the HFE than before the experiment. Reworking of sandbars during diurnal fluctuating flow operations in the first 6 months following the HFE caused sandbar erosion and a reduction of backwater size and abundance to conditions that were 5 to 14 percent greater than existed before the HFE. In the months following the HFE, erosion of sandbars and deposition in eddy return-current channels caused reductions of backwater area and volume. However, sandbar relief was still greater in October 2008 such that backwaters were present across a broader range of discharges than in February 2008. Topographic analyses of the sandbar and backwater morphologic data collected in this study demonstrate that steady flows are associated with a greater amount of continuously available backwater habitat than fluctuating flows, which result in a greater amount of intermittently available habitat. With the exception of the period immediately following the HFE, backwater habitat in 2008 was greater for steady flows associated with dam operations of relatively lower monthly volume (about 227 m3/s) than steady flows associated with dam operations

  19. Grouting Applications in Cindere Dam

    Directory of Open Access Journals (Sweden)

    Devrim ALKAYA

    2011-01-01

    Full Text Available Grouting is one of the most popular method to control the water leakage in fill dam constructions. With this regard this method is widely used in all the world. Geological and geotechnical properties of rock are important parameters affect the design of grouting. In this study, geotechnical properties of Cindere Dam's base rock and the grouting prosedure have been investigated with grouting pressure.

  20. Evaluation of juvenile salmonid behavior near a prototype weir box at Cowlitz Falls Dam, Washington, 2013

    Science.gov (United States)

    Kock, Tobias J.; Liedtke, Theresa L.; Ekstrom, Brian K.; Tomka, Ryan G.; Rondorf, Dennis W.

    2014-01-01

    Collection of juvenile salmonids at Cowlitz Falls Dam is a critical part of the effort to restore salmon in the upper Cowlitz River because the majority of fish that are not collected at the dam pass downstream and enter a large reservoir where they become landlocked and lost to the anadromous fish population. However, the juvenile fish collection system at Cowlitz Falls Dam has failed to achieve annual collection goals since it first began operating in 1996. Since that time, numerous modifications to the fish collection system have been made and several prototype collection structures have been developed and tested, but these efforts have not substantially increased juvenile fish collection. Studies have shown that juvenile steelhead (Oncorhynchus mykiss), coho salmon (Oncorhynchus kisutch), and Chinook salmon (Oncorhynchus tshawytscha) tend to locate the collection entrances effectively, but many of these fish are not collected and eventually pass the dam through turbines or spillways. Tacoma Power developed a prototype weir box in 2009 to increase capture rates of juvenile salmonids at the collection entrances, and this device proved to be successful at retaining those fish that entered the weir. However, because of safety concerns at the dam, the weir box could not be deployed near a spillway gate where the prototype was tested, so the device was altered and re-deployed at a different location, where it was evaluated during 2013. The U.S. Geological Survey conducted an evaluation using radiotelemetry to monitor fish behavior near the weir box and collection flumes. The evaluation was conducted during April–June 2013. Juvenile steelhead and coho salmon (45 per species) were tagged with a radio transmitter and passive integrated transponder (PIT) tag, and released upstream of the dam. All tagged fish moved downstream and entered the forebay of Cowlitz Falls Dam. Median travel times from the release site to the forebay were 0.8 d for steelhead and 1.2 d for coho

  1. Climate change and the causes of dam failures in Australia

    International Nuclear Information System (INIS)

    Lewis, B.

    2007-01-01

    As a result of poor dam construction methods in Australia and significant droughts occurring over the past 60 years, there is a danger that mistakes made during previous droughts will be repeated. Dams were often built in soils of very low moisture content to ensure a properly compacted bank. As a result of these poor construction methods, the drought years have produced an unusually high number of dam failures. This paper discussed the causes of dam failures such as dispersive clays and defects in associated structures. The discussion on dispersive clays included cracking, piping, tunneling, and slides. Dispersive clays occur in soils whose clay minerals separate into single grains when placed in contact with water and are associated with high soil erodability and their distribution often coincides with the occurrence of erosion gullying, rilling and piping. Dispersive clays in a dam embankment can result in the leaching out of material from the embankment with consequent erosion and failure. Defects in associated structures that were discussed included spillway blockage and outlet pipe blockage. It was concluded that dam failures are seldom due to one particular cause but rather due to one weakness triggering another. It was concluded that failures are difficult and expensive to remedy. 9 refs., 4 figs

  2. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  3. Quantum gate decomposition algorithms.

    Energy Technology Data Exchange (ETDEWEB)

    Slepoy, Alexander

    2006-07-01

    Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

  4. Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

    International Nuclear Information System (INIS)

    Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan; Howgate, John; Sharp, Ian D.; Stutzmann, Martin

    2010-01-01

    We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the μGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

  5. Hypothalamic endoplasmic reticulum stress and insulin resistance in offspring of mice dams fed high-fat diet during pregnancy and lactation.

    Science.gov (United States)

    Melo, Arine M; Benatti, Rafaela O; Ignacio-Souza, Leticia M; Okino, Caroline; Torsoni, Adriana S; Milanski, Marciane; Velloso, Licio A; Torsoni, Marcio Alberto

    2014-05-01

    The goal of this study was to determine the presence early of markers of endoplasmic reticulum stress (ERS) and insulin resistance in the offspring from dams fed HFD (HFD-O) or standard chow diet (SC-O) during pregnancy and lactation. To address this question, we evaluated the hypothalamic and hepatic tissues in recently weaned mice (d28) and the hypothalamus of newborn mice (d0) from dams fed HFD or SC during pregnancy and lactation. Body weight, adipose tissue mass, and food intake were more accentuated in HFD-O mice than in SC-O mice. In addition, intolerance to glucose and insulin was higher in HFD-O mice than in SC-O mice. Compared with SC-O mice, levels of hypothalamic IL1-β mRNA, NFκB protein, and p-JNK were increased in HFD-O mice. Furthermore, compared with SC-O mice, hypothalamic AKT phosphorylation after insulin challenge was reduced, while markers of ERS (p-PERK, p-eIF2α, XBP1s, GRP78, and GRP94) and p-AMPK were increased in the hypothalamic tissue of HFD-O at d28 but not at d0. These damages to hypothalamic signaling were accompanied by increased triglyceride deposits, activation of NFκB, p-JNK, p-PERK and p-eIF2α. These point out lactation period as maternal trigger for metabolic changes in the offspring. These changes may occur early and quietly contribute to obesity and associated pathologies in adulthood. Although in rodents the establishment of ARC neuronal projections occurs during the lactation period, in humans it occurs during the third trimester. Gestational diabetes and obesity in this period may contribute to impairment of energy homeostasis. Copyright © 2014 Elsevier Inc. All rights reserved.

  6. Qu'Appelle River Dam, dam break analysis using advanced GIS tools for rapid modelling and inundation mapping

    Energy Technology Data Exchange (ETDEWEB)

    Bonin, D. [Hatch Energy, Winnipeg, MB (Canada); Campbell, C. [Saskatchewan Watershed Authority, Moose Jaw, SK (Canada); Groeneveld, J. [Hatch Energy, Calgary, AB (Canada)

    2008-07-01

    The South Saskatchewan River Project (SSRP) comprises a multi-purpose reservoir that provides water for conservation and irrigation, flood control, power generation, recreation, and municipal and industrial water supply. In addition to the 64 m high Gardiner Dam, the 27 m high Qu'Appelle River Dam and the 22 km long Lake Diefenbaker Reservoir, the SSRP also includes ancillary works. The Qu'Appelle River valley extends for 458 km before connecting to the Assiniboine River. The valley is incised up to 90 m in depth and is a popular cottaging and recreational area with several major communities located in the flood plain. In the event of a breach of the Qu'Appelle Dam, the discharge will increase from a normal maximum discharge of under 60 m{sup 3} per second to over 50,000 m{sup 3} per second. The Saskatchewan Watershed Authority (SWA) is responsible for ensuring safe development of the Province's water resources, without affecting reservoir or lake operations, and preventing damage from flooding, erosion or land slides. It is in the process of developing Hazard Assessments and emergency preparedness plans for each of their dams in accordance with the Canadian Dam Safety Guidelines. Studies using GIS technology and the hydrodynamic routing model HEC-RAS have been completed to evaluate the potential inundation that may result in the event of failure of the Qu'Appelle River Dam. These studies involved the development of a breach parameter model using a breach data set revised to better reflect the Qu'Appelle River Dam; the development of a dam break model for the Qu'Appelle River Dam and downstream river and flood plain; and, the use of this model to simulate two potential dam failure scenarios for the Qu'Appelle River Dam, notably failure during passage of the PMF and failure during fair weather conditions. Inundation maps have been prepared for the downstream Qu'Appelle River valley for each of the above events. 3 refs., 4

  7. Feasibility of groundwater recharge dam projects in arid environments

    Science.gov (United States)

    Jaafar, H. H.

    2014-05-01

    A new method for determining feasibility and prioritizing investments for agricultural and domestic recharge dams in arid regions is developed and presented. The method is based on identifying the factors affecting the decision making process and evaluating these factors, followed by determining the indices in a GIS-aided environment. Evaluated parameters include results from field surveys and site visits, land cover and soils data, precipitation data, runoff data and modeling, number of beneficiaries, domestic irrigation demand, reservoir objectives, demography, reservoirs yield and reliability, dam structures, construction costs, and operation and maintenance costs. Results of a case study on more than eighty proposed dams indicate that assessment of reliability, annualized cost/demand satisfied and yield is crucial prior to investment decision making in arid areas. Irrigation demand is the major influencing parameter on yield and reliability of recharge dams, even when only 3 months of the demand were included. Reliability of the proposed reservoirs as related to their standardized size and net inflow was found to increase with increasing yield. High priority dams were less than 4% of the total, and less priority dams amounted to 23%, with the remaining found to be not feasible. The results of this methodology and its application has proved effective in guiding stakeholders for defining most favorable sites for preliminary and detailed design studies and commissioning.

  8. Small farm dams: impact on river flows and sustainability in a context of climate change

    Science.gov (United States)

    Habets, F.; Philippe, E.; Martin, E.; David, C. H.; Leseur, F.

    2014-10-01

    The repetition of droughts in France has led to a growing demand for irrigation water and consequently to an increase in requests for the construction of small farm dams. Although such dams are small, their accumulation in a basin affects river flows, because the water collected in these small farm dams is used for irrigation and thus does not contribute to river flow. In order to gain more insight into their impact on the annual and monthly discharges, especially during dry years, a small farm dam model was built and connected to a hydrometeorological model. Several scenarios with different volume capacities, filling catchment sizes and filling periods were tested for such dams. The results were analysed in a small basin in western France, where the pressure for building such dams is high, and then extended to the entire country. It was found that, due to the hydrometeorological conditions (mainly low precipitation compared to other regions in France), the development of small farm dams in north-western France would result in greater decreases in river flows and less efficient filling of small farm dams than in other regions. Therefore, such dams might not be as efficient as expected in supplying water to farmers when needed. Moreover, the ability to fill small farm dams is projected to decrease in a context of climate change, despite the uncertainty on the evolution of precipitation, thus worsening the situation.

  9. Special design issues related to the G. Ross Lord Dam constructed in Metropolitan Toronto

    Energy Technology Data Exchange (ETDEWEB)

    Sowa, V.A. [Jacques Whitford and Associates Ltd., Vancouver, BC (Canada); Tawil, A.H. [Acres International Ltd., Niagara Falls, ON (Canada); Haley, D.R. [Toronto Region and Conservation Authority, Downsview, ON (Canada)

    2002-07-01

    This paper describes the special considerations required to build a flood control dam in a metropolitan area that holds major city infrastructures such as power transmission towers, pipelines, sanitary sewers and graveyards. The paper refers to the G. Ross Lord Dam, a 20 m high earth fill flood control dam which was constructed in 1973 on the West Branch of the Don River in Toronto. It was built following recommendations after Hurricane Hazel caused widespread flooding and the death of 81 people in 1954. The dam includes a concrete chute spillway and stilling basin. The geotechnical design of the dam was described along with the dam structures and the methods used to flood proof the infrastructure. The dam has a sloping impervious core and an upstream blanket to reduce seepage. Seepage control is provided by a drainage blanket and a chimney drain. A main overflow spillway was constructed on the south abutment, and a low level outlet was constructed at the base of the dam to accommodate normal river flows through the dam. Most of the water level control during a flood event is provided by the main overflow spillway. Spillway slab anchor keys prevent down slope creep of the slabs. The dam, the spillway and the reservoir structure have performed well since construction. 6 refs., 10 figs.

  10. The Politics, Development and Problems of Small Irrigation Dams in Malawi: Experiences from Mzuzu ADD

    Directory of Open Access Journals (Sweden)

    Bryson Gwiyani Nkhoma

    2011-10-01

    Full Text Available The paper examines the progress made regarding the development of small irrigation dams in Malawi with the view of establishing their significance in improving rural livelihoods in the country. The paper adopts a political economy theory and a qualitative research approach. Evidence from Mzuzu Agricultural Development Division (ADD, where small reservoirs acquire specific relevance, shows that despite the efforts made, the development of small dams is making little progress. The paper highlights that problems of top-down planning, high investment costs, negligence of national and local interests, over-dependency on donors, and conflicts over the use of dams – which made large-scale dams unpopular in the 1990s – continue to affect the development of small irrigation dams in Malawi. The paper argues that small irrigation dams should not be simplistically seen as a panacea to the problems of large-scale irrigation dams. Like any other projects, small dams are historically and socially constructed through interests of different actors in the local settings, and can only succeed if actors, especially those from formal institutions, develop adaptive learning towards apparent conflicting relations that develop among them in the process of implementation. In the case of Mzuzu ADD, it was the failure of the government to develop this adaptive learning to the contestations and conflicts among these actors that undermined successful implementation of small irrigation dams. The paper recommends the need to consider local circumstances, politics, interests, rights and institutions when investing in small irrigation dams.

  11. Double-disc gate valve

    International Nuclear Information System (INIS)

    Wheatley, S.J.

    1979-01-01

    The invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewith, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separation of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve

  12. Skyscraper dams in Yunnan : China's new electricity generator should step in

    Energy Technology Data Exchange (ETDEWEB)

    Ryder, G.

    2006-05-12

    The construction of a series of high-head hydroelectric power dams in China's earthquake-prone Yunnan province has raised concerns in China's scientific and environmental communities. The series of skyscraper-high dams are being built to meet Beijing's power production targets without the benefit of market discipline or effective regulatory oversight. Dam building is central to Beijing's plan for tripling the country's hydropower production by 2020. To meet that target, the State Council granted exclusive development rights to Hydrolancang, the Yunnan Huadian Nu River Hydropower Development Company and the Three Gorges Corporation. The Hydrolancang company is building 2 of the world's tallest and most controversial hydro dams on the Lancang River. When completed in 2012, Xiaowan will be the world's tallest arch dam at 292 metres high. Another dam, the 254 metre high Nuozhadu dam is expected to start generating power in 2017. In addition, there are plans for 13 other high dams along the Nu River, one of only 2 major rivers in China that remains free-flowing. This document expressed that China's new electricity regulator should initiate a full-cost review of state dam-building in the earthquake-prone province. It was argued that as state-owned power companies, the dam builders are not market-driven and are shielded from many of the financial risks and environmental liabilities associated with large dams. The author argued that China's electricity regulator should examine the dam builders' projects costs and profits and review the economic implications of the hydro policy for China's power consumers. It was also suggested that the country's modernization goals for the power industry should be reviewed. The immediate concerns are ecological damage and the frequency with which Yunnan province is hit by earthquakes, rock falls and landslides. Experts caution that the extra weight of the high dams and reservoirs

  13. Signatures of Mechanosensitive Gating.

    Science.gov (United States)

    Morris, Richard G

    2017-01-10

    The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  14. Analysis of the Effect of Channel Leakage on Design, Characterization and Modelling of a High Voltage Pseudo-Floating Gate Sensor-Front-End

    Directory of Open Access Journals (Sweden)

    Luca Marchetti

    2017-10-01

    Full Text Available In this paper, we analyze the effects of channel leakage on the design, modelling and characterization of a high voltage pseudo-floating gate amplifier (PFGA used as sensor front-end. Leakages are known as a major challenge in new modern CMOS technologies, which are used to bias the PFGA, and consequently affect the behavior of the amplifier. As high voltages are desired for actuation of many types of resonating sensors, especially in ultrasound applications, PFGA implemented in high voltage and low leakage technologies, such as older CMOS fabrication processes or power MOSFET can be the only option. The challenge with these technologies used to implement the PFGA is that the leakages are very low, which affect the biasing of the floating gate. However, the numerous advantages of this type of amplifier, implemented with modern fabrication processes, such as high flexibility, compactness, low power consumption , etc. encouraged the authors to research about this topic. This work provides analysis of the working principle and the design rules for this amplifier, emphasizing the major differences between PFGA implemented in low leakage and high leakage technologies. Static and dynamic analysis, input offset and non-linearity of the PFGA are the main topics of this article. Three different design approaches are presented in this paper, in order to provide a more general design procedure and offset compensation for any low leakage PFGA. The amplifier has been simulated in AMS- 0 . 35 μ m CMOS models for supply voltages of 5 V and 10 V. Two prototypes have been realized to verify the validity of the modelling and the simulation results. Both devices have been realized by using discrete components and mounted on a printed circuit board. In this work, MOSFETs are realized by using commercial IC CD4007UB and 2N7000. Measurement results of the first prototype proved that the implementation of a low leakage PFGA is possible after that the input offset of

  15. Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Li, Wei-Chen; Matsuda, Yasuhiro H.; Pan, Tung-Ming

    2013-01-01

    In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTi x O y gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTi x O y IGZO TFT device annealed at 400 °C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm 2 /V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high I on/off ratio(3.73 × 10 6 ). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTi x O y film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C. - Highlights: • ErTi x O y InGaZnO thin-film transistors (TFT). • Structural and electrical properties of the TFT were investigated. • TFT device annealed at 400 °C exhibited better electrical characteristics. • Reliability of TFT device can be improved by annealing at 400 °C

  16. Getting started with FortiGate

    CERN Document Server

    Fabbri, Rosato

    2013-01-01

    This book is a step-by-step tutorial that will teach you everything you need to know about the deployment and management of FortiGate, including high availability, complex routing, various kinds of VPN working, user authentication, security rules and controls on applications, and mail and Internet access.This book is intended for network administrators, security managers, and IT pros. It is a great starting point if you have to administer or configure a FortiGate unit, especially if you have no previous experience. For people that have never managed a FortiGate unit, the book helpfully walks t

  17. Calibration of submerged multi-sluice gates

    Directory of Open Access Journals (Sweden)

    Mohamed F. Sauida

    2014-09-01

    The main objective of this work is to study experimentally and verify empirically the different parameters affecting the discharge through submerged multiple sluice gates (i.e., the expansion ratios, gates operational management, etc.. Using multiple regression analysis of the experimental results, a general equation for discharge coefficient is developed. The results show, that the increase in the expansion ratio and the asymmetric operation of gates, give higher values for the discharge coefficient. The obtained predictions of the discharge coefficient using the developed equations are compared to the experimental data. The present developed equations showed good consistency and high accuracy.

  18. Use of isotopes techniques during the life cycle of dams and reservoirs: cases in Latin American

    International Nuclear Information System (INIS)

    Leon, S.H.

    2006-01-01

    In fact, the combined use of isotope and conventional techniques is considered a reliable tool for studying problems related to dam safety and has become a new culture for civil / dam engineers, hydro geologists and researchers who involve in water resource management fields. The use of natural (environmental) and artificial isotopes as tracers together with systematic analyses of the hydrochemistry, electrical conductivity and temperature profiles data during the investigation and monitoring of leakage and seepage in dams and reservoirs are now becoming popular among the dam owners in seeking the best solution for dam related problems. Many studies and experiences worldwide on effective dam management programmes have indicated that any investigation about leakages and seepages are not possible to be accomplished successfully without synergic application of the conventional technologies and isotopic techniques. The major advancement in this area is the measurements study for establishment of baseline hydrogeology at each hydraulic work project like dams and reservoirs. The parameters include hydro chemicals, isotopic and geologic in each basin, river, reservoir, dams, tunnels and groundwater which provide high value information for decision making during all the stages in the life cycle of the dams. Many hydroelectric and water supply projects in latin america apply these investigation strategies. The main target is to investigate and understand the water movement around the dam and its vicinity. Then the specialised work teams will decide for the effective and economic monitoring activities and the implementation of the recommended remedial measures to ensure high standards of safety and security of the large dams and reservoirs. A typical example of specific leakage investigation of la Honda dam is briefly discussed. (Author)

  19. Dams and Obstructions along Iowa's Canoe Routes

    Data.gov (United States)

    Iowa State University GIS Support and Research Facility — This dataset represents obstruction to canoe and boat users of the canoe routes of Iowa. This may represent actual dams, rock dams (natural or man made), large...

  20. Douglas County Dam Breach Inundation Areas

    Data.gov (United States)

    Kansas Data Access and Support Center — Dam breach analysis provides a prediction of the extent and timing of flooding from a catastrophic breach of the dams. These results are sufficient for developing...

  1. Simulation of Breach Outflow for Earthfill Dam

    International Nuclear Information System (INIS)

    Razad, Azwin Zailti Abdul; Muda, Rahsidi Sabri; Sidek, Lariyah Mohd; Azia, Intan Shafilah Abdul; Mansor, Faezah Hanum; Yalit, Ruzaimei

    2013-01-01

    Dams have been built for many reasons such as irrigation, hydropower, flood mitigation, and water supply to support development for the benefit of human. However, the huge amount of water stored behind the dam can seriously pose adverse impacts to the downstream community should it be released due to unwanted dam break event. To minimise the potential loss of lives and property damages, a workable Emergency Response Plan is required to be developed. As part of a responsible dam owner and operator, TNB initiated a study on dam breach modelling for Cameron Highlands Hydroelectric Scheme to simulate the potential dam breach for Jor Dam. Prediction of dam breach parameters using the empirical equations of Froehlich and Macdonal-Langridge-Monopolis formed the basis of the modelling, coupled with MIKE 11 software to obtain the breach outflow due to Probable Maximum Flood (PMF). This paper will therefore discuss the model setup, simulation procedure and comparison of the prediction with existing equations.

  2. Technical bulletin : structural considerations for dam safety

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2007-07-01

    This technical bulletin discussed issues related to the safety assessment of concrete water-retaining structures and timber dams. Structures reviewed in the paper included gravity dams; buttress dams; arch dams; spillway structures; intake structures; power plants; roller compacted concrete dams; and timber dams. A variety of issues related to the loss of cohesive bond and discontinuities in bedrock foundations were reviewed with reference to issues related to compressive strength, tensile strength, and shear strength. Static failure modes and failure mechanisms related to dam failures were also described. Visual indicators for potential failures include abutment and foundation movement, seepage, and structure movements. Loading combinations were discussed, and performance indicators for gravity dams were provided. Methods of analysis for considering load characteristics, structure types and geological conditions were also discussed. Modelling techniques for finite element analysis were also included. 16 refs., 3 tabs., 5 figs.

  3. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance

    Science.gov (United States)

    2012-10-01

    right by a pitch (P) and subsequently summed to provide a multi-gate superimposed temperature distribution ( TMG (x)). An example is shown in figure...temperature rise over the coolant, or the difference between the centerline multi gate junction temperature on the upper surface ( TMG ,GaN(0)) of the GaN...TC coolant temperature (°C) TCP(x) cold plate temperature distribution (°C) TGaN(x,y) temperature distribution within GaN (°C) TMG (x) multiple gate

  4. Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Carr, Adra; Rozen, John; Frank, Martin M.; Ando, Takashi; Cartier, Eduard A.; Kerber, Pranita; Narayanan, Vijay; Haight, Richard [IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

    2015-07-06

    The net charge state was probed of metal-oxide-semiconductor gate stacks consisting of In{sub 0.53}Ga{sub 0.47}As /high-κ dielectric/5 nm TiN, for both Al{sub 2}O{sub 3} and HfO{sub 2} dielectrics, via investigation of band bending at the InGaAs/high-κ interface. Using pump-probe photoelectron spectroscopy, changes to band bending were studied for each sequential layer deposited onto the InGaAs substrate and subsequent annealing up to 600 °C. Two behavioral regions were observed in annealing studies: (1) a lower temperature (<350 °C) region, attributed to changes at the high-κ/TiN interface, and (2) a higher temperature region (> 350 °C), associated with a net positive charge increase within the oxide. These band bending measurements delineate the impact of processing steps inherently inaccessible via capacitance-voltage electrical characterization.

  5. 78 FR 53494 - Dam Safety Modifications at Cherokee, Fort Loudoun, Tellico, and Watts Bar Dams

    Science.gov (United States)

    2013-08-29

    ... Bar Dams AGENCY: Tennessee Valley Authority. ACTION: Issuance of Record of Decision. SUMMARY: This... the dam safety modifications at Cherokee, Fort Loudoun, Tellico, and Watts Bar Dams. The notice of... Loudoun, Tellico, and Watts Bar Dams was published in the Federal Register on May 31, 2013. This...

  6. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  7. WinDAM C earthen embankment internal erosion analysis software

    Science.gov (United States)

    Two primary causes of dam failure are overtopping and internal erosion. For the purpose of evaluating dam safety for existing earthen embankment dams and proposed earthen embankment dams, Windows Dam Analysis Modules C (WinDAM C) software will simulate either internal erosion or erosion resulting f...

  8. EVALUASI KEAMANAN DAM JATILUHUR BERBASIS INDEKS RESIKO

    Directory of Open Access Journals (Sweden)

    Avazbek Ishbaev

    2014-12-01

    Full Text Available The dams have very important roles to agricultural activities. Especially, West Java with 240,000 hectares of agricultural land, needs a good dam structure that can be used sustainably. Jatiluhur dam in Purwakarta, West Java is one of big dams in Indonesia which has important rules not only for Purwakarta but also for Jakarta, Karawang and Bekasi residents. A study and observation about safety and dam stability is needed to prevent any damage. The purpose of this research were to identify parameters that influenced dam safety and to evaluate dam reliability based on index tools. Analysis was done using risk index tools. The result showed that the condition of the dam of Jatiluhur is still satisfied with indicators, "Idam"-750. The total index risk was 127.22 and the safety factor was 83.04 out of 100. Therefore, Jatiluhur dam could be classified as safe and no need for particular treatments. Jatiluhur dam can be operated in normal condition or abnormal condition with periodic monitoring. Keywords: dam safety, evaluation, Jatiluhur Dam, risk index tools

  9. Dams life; La vie des barrages

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-12-31

    The paper reports on the conclusions of decennial and annual inspections of French dams. Dams surveillance is performed by the operators and consists in visual examinations and measurements. Concrete dams, in particular, always have more or less developed fissures with water sweating threw the concrete mass or the foundations. Old concrete often show low swelling phenomena which are measured too. (J.S.)

  10. 78 FR 62627 - Sam Rayburn Dam Rate

    Science.gov (United States)

    2013-10-22

    ..., Wholesale Rates for Hydro Power and Energy Sold to Sam Rayburn Dam Electric Cooperative, Inc. (Contract No... Schedule SRD-08, Wholesale Rates for Hydro Power and Energy Sold to Sam Rayburn Dam Electric Cooperative... ADMINISTRATION RATE SCHEDULE SRD-13 \\1\\ WHOLESALE RATES FOR HYDRO POWER AND ENERGY SOLD TO SAM RAYBURN DAM...

  11. Highly scalable 3-D NAND-NOR hybrid-type dual bit per cell flash memory devices with an additional cut-off gate

    International Nuclear Information System (INIS)

    Cho, Seongjae; Shim, Wonbo; Park, Ilhan; Kim, Yoon; Park, Byunggook

    2010-01-01

    In this work, a nonvolatile memory (NVM) device of novel structure in 3 dimensions is introduced, and its operation physics is validated. It is based on a pillar structure in which two identical storage nodes are located for dual-bit operation. The two storage nodes on neighboring pillars are controlled by using one common control gate so that the space between silicon pillars can be further reduced. For compatibility with conventional memory operations, an additional cut-off gate is constructed under the common control gate. This is considered as the ultimate form for a 3-D nonvolatile memory device based on a double-gate structure. The underlying physics is explained, and the operational schemes are validated in various aspects by using a numerical device simulation. Also, critical issues in device design for higher reliability are discussed.

  12. Implementation of 40-ps high-speed gated-microchannel-plate based x-ray framing cameras on reentrant SIM's for Nova

    International Nuclear Information System (INIS)

    Bell, P.M.; Kilkenny, J.D.; Landen, O.; Bradley, D.K.

    1994-01-01

    Gated framing cameras used in diagnosing laser produced plasmas have been used on the Nova laser system since 1987. There have been many variations of these systems implemented. All of these cameras have been ultimately limited in response time for two reasons. One being the electrical gating amplitude verses the gate width, this has always limited the detectable gain in the system. The second being the length to diameter (l/d) ratio of standard off the shelf microchannel plates (MCP). This sets the minimum electrical gate pulse that will give detectable gain from a given microchannel plate. The authors have implemented two different types of 40 ps framing camera configurations on the Nova laser system. They will describe the configurations of both systems as well as discuss the advantages of each

  13. Ballistic transport of graphene pnp junctions with embedded local gates

    International Nuclear Information System (INIS)

    Nam, Seung-Geol; Ki, Dong-Keun; Kim, Youngwook; Kim, Jun Sung; Lee, Hu-Jong; Park, Jong Wan

    2011-01-01

    We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

  14. Optical XOR gate

    Science.gov (United States)

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  15. Dam's design continues throughout construction

    Energy Technology Data Exchange (ETDEWEB)

    Lara E, R; Wulff, J G

    1979-11-01

    In spite of adverse site conditions, Arenal dam in Costa Rica was completed a year ahead of schedule. Historical data on local earthquake activity which was available in unusual detail reduced some uncertainties in design information. Other uncertainties regarding the complex foundation conditions were resolved as excavation and construction progressed.

  16. Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

    International Nuclear Information System (INIS)

    Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.

    2005-01-01

    A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented

  17. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  18. Monte Carlo Simulations of High-speed, Time-gated MCP-based X-ray Detectors: Saturation Effects in DC and Pulsed Modes and Detector Dynamic Range

    International Nuclear Information System (INIS)

    Kruschwitz, Craig; Ming Wu; Moy, Ken; Rochau, Greg

    2008-01-01

    We present here results of continued efforts to understand the performance of microchannel plate (MCP)-based, high-speed, gated, x-ray detectors. This work involves the continued improvement of a Monte Carlo simulation code to describe MCP performance coupled with experimental efforts to better characterize such detectors. Our goal is a quantitative description of MCP saturation behavior in both static and pulsed modes. We have developed a new model of charge buildup on the walls of the MCP channels and measured its effect on MCP gain. The results are compared to experimental data obtained with a short-pulse, high-intensity ultraviolet laser; these results clearly demonstrate MCP saturation behavior in both DC and pulsed modes. The simulations compare favorably to the experimental results. The dynamic range of the detectors in pulsed operation is of particular interest when fielding an MCP-based camera. By adjusting the laser flux we study the linear range of the camera. These results, too, are compared to our simulations

  19. Geochemical discrimination of five pleistocene Lava-Dam outburst-flood deposits, western Grand Canyon, Arizona

    Science.gov (United States)

    Fenton, C.R.; Poreda, R.J.; Nash, B.P.; Webb, R.H.; Cerling, T.E.

    2004-01-01

    Pleistocene basaltic lava dams and outburst-flood deposits in the western Grand Canyon, Arizona, have been correlated by means of cosmogenic 3He (3Hec) ages and concentrations of SiO2, Na2O, K2O, and rare earth elements. These data indicate that basalt clasts and vitroclasts in a given outburst-flood deposit came from a common source, a lava dam. With these data, it is possible to distinguish individual dam-flood events and improve our understanding of the interrelations of volcanism and river processes. At least five lava dams on the Colorado River failed catastrophically between 100 and 525 ka; subsequent outburst floods emplaced basalt-rich deposits preserved on benches as high as 200 m above the current river and up to 53 km downstream of dam sites. Chemical data also distinguishes individual lava flows that were collectively mapped in the past as large long-lasting dam complexes. These chemical data, in combination with age constraints, increase our ability to correlate lava dams and outburst-flood deposits and increase our understanding of the longevity of lava dams. Bases of correlated lava dams and flood deposits approximate the elevation of the ancestral river during each flood event. Water surface profiles are reconstructed and can be used in future hydraulic models to estimate the magnitude of these large-scale floods.

  20. The environment of the Olympic Dam project

    International Nuclear Information System (INIS)

    Anon.

    1989-01-01

    The Olympic Dam uranium/copper/gold project at Roxby Downs, South Australia, has a harsh environment with high summer temperatures, low rainfall and poor quality soils. There are no natural water courses. The vegetation is dominated by annual grasses in summer and wildflowers in winter. Red kangaroos are the most commonly sighted native mammals. The Fat-tailed Dunnart a nocturnal carniverous marsupial, is found. Eighty three bird species have been recorded. Reptiles are numerous and one amphibian occurs. A vermin eradication program aimed at rabbit control is conducted. ills

  1. Valorization of mud from Fergoug dam in manufacturing mortars

    Directory of Open Access Journals (Sweden)

    L. Laoufi

    2016-12-01

    Full Text Available The production of calcined mud, with pozzolanic properties, from the large quantities of sediments dredged from Algerian dams, could be a good opportunity for the formulation of high performance mortars and pozzolanic concretes, with lower costs and less greenhouse gas (CO2 emissions. The optimal temperatures selected for calcination were 750, 850 and 950 °C. The burning operation was continuous over a period of 3 h. Therefore, a series of physical, chemical, mechanical and microstructural analyses were conducted on sediment samples, collected from the waters of Fergoug dam. The results obtained from the analyses of the calcined mud, from the dam, allowed saying that mortars with different percentages of that mud represent a potential source of high reactivity pozzolanic materials.

  2. Assessing Risks of Mine Tailing Dam Failures

    Science.gov (United States)

    Concha Larrauri, P.; Lall, U.

    2017-12-01

    The consequences of tailings dam failures can be catastrophic for communities and ecosystems in the vicinity of the dams. The failure of the Fundão tailings dam at the Samarco mine in 2015 killed 19 people with severe consequences for the environment. The financial and legal consequences of a tailings dam failure can also be significant for the mining companies. For the Fundão tailings dam, the company had to pay 6 billion dollars in fines and twenty-one executives were charged with qualified murder. There are tenths of thousands of active, inactive, and abandoned tailings dams in the world and there is a need to better understand the hazards posed by these structures to downstream populations and ecosystems. A challenge to assess the risks of tailings dams in a large scale is that many of them are not registered in publicly available databases and there is little information about their current physical state. Additionally, hazard classifications of tailings dams - common in many countries- tend to be subjective, include vague parameter definitions, and are not always updated over time. Here we present a simple methodology to assess and rank the exposure to tailings dams using ArcGIS that removes subjective interpretations. The method uses basic information such as current dam height, storage volume, topography, population, land use, and hydrological data. A hazard rating risk was developed to compare the potential extent of the damage across dams. This assessment provides a general overview of what in the vicinity of the tailings dams could be affected in case of a failure and a way to rank tailings dams that is directly linked to the exposure at any given time. One hundred tailings dams in Minas Gerais, Brazil were used for the test case. This ranking approach could inform the risk management strategy of the tailings dams within a company, and when disclosed, it could enable shareholders and the communities to make decisions on the risks they are taking.

  3. Putting Roman Dams in Context: a Virtual Approach

    Science.gov (United States)

    Decker, M. J.; Du Vernay, J. P.; Mcleod, J. B.

    2017-08-01

    Water resources and management have become a critical global issue. During the half-millennium of its existence, the Roman Empire developed numerous strategies to cope with water management, from large-scale urban aqueduct systems, to industrial-scale water mills designed to cope with feeding growing city populations. Roman engineers encountered, adopted, and adapted indigenous hydraulic systems, and left lasting imprints on the landscape of the Mediterranean and temperate Western Europe by employing a range of water technologies. A recent academic study has enabled the identification of remains of and references to seventy-two dams from the Roman era, constructed in Spain between the 1st and 4th century AD. Such unique heritage, without comparisons in the Mediterranean makes Spain an emblematic case study for the analysis of Roman hydraulic engineering and water management policies. Fifty dams have been located and detailed. The twenty-two outstanding, although identified on the ground, have not been able to be acceptably characterized, due in some cases to their being ruins in a highly degraded state, others due to their being masked by repairs and reconstructions subsequent to the Roman era. A good example of such neglected dams is the buttress dam of Consuegra , in Toledo province (Castilla-La Mancha). Dating to the 3rd - 4th century AD, the Dam of Consuegra, on the basin of the Guadiana, with its over 600 metres length and 4,80 metres height, is a remarkable case of Roman engineering mastery. It had a retaining wall upstream, numerous buttresses and perhaps an embankment downstream, of which no remains are left. The application of 3D digital imaging technique to create a high quality virtual model of such monuments has proved to be successful especially for the study of the technological aspects related its construction. The case study of the Roman dam of Muel (Zaragoza) has shown, in fact, as best practices in digital archaeology can provide an original and

  4. Specific expression of the human voltage-gated proton channel Hv1 in highly metastatic breast cancer cells, promotes tumor progression and metastasis

    International Nuclear Information System (INIS)

    Wang, Yifan; Li, Shu Jie; Pan, Juncheng; Che, Yongzhe; Yin, Jian; Zhao, Qing

    2011-01-01

    Highlights: → Hv1 is specifically expressed in highly metastatic human breast tumor tissues. → Hv1 regulates breast cancer cytosolic pH. → Hv1 acidifies extracellular milieu. → Hv1 exacerbates the migratory ability of metastatic cells. -- Abstract: The newly discovered human voltage-gated proton channel Hv1 is essential for proton transfer, which contains a voltage sensor domain (VSD) without a pore domain. We report here for the first time that Hv1 is specifically expressed in the highly metastatic human breast tumor tissues, but not in poorly metastatic breast cancer tissues, detected by immunohistochemistry. Meanwhile, real-time RT-PCR and immunocytochemistry showed that the expression levels of Hv1 have significant differences among breast cancer cell lines, MCF-7, MDA-MB-231, MDA-MB-468, MDA-MB-453, T-47D and SK-BR-3, in which Hv1 is expressed at a high level in highly metastatic human breast cancer cell line MDA-MB-231, but at a very low level in poorly metastatic human breast cancer cell line MCF-7. Inhibition of Hv1 expression in the highly metastatic MDA-MB-231 cells by small interfering RNA (siRNA) significantly decreases the invasion and migration of the cells. The intracellular pH of MDA-MB-231 cells down-regulated Hv1 expression by siRNA is obviously decreased compared with MDA-MB-231 with the scrambled siRNA. The expression of matrix metalloproteinase-2 and gelatinase activity in MDA-MB-231 cells suppressed Hv1 by siRNA were reduced. Our results strongly suggest that Hv1 regulates breast cancer intracellular pH and exacerbates the migratory ability of metastatic cells.

  5. Trading river services: optimizing dam decisions at the basin scale to improve socio-ecological resilience

    Science.gov (United States)

    Roy, S. G.; Gold, A.; Uchida, E.; McGreavy, B.; Smith, S. M.; Wilson, K.; Blachly, B.; Newcomb, A.; Hart, D.; Gardner, K.

    2017-12-01

    Dam removal has become a cornerstone of environmental restoration practice in the United States. One outcome of dam removal that has received positive attention is restored access to historic habitat for sea-run fisheries, providing a crucial gain in ecosystem resilience. But dams also provide stakeholders with valuable services, and uncertain socio-ecological outcomes can arise if there is not careful consideration of the basin scale trade offs caused by dam removal. In addition to fisheries, dam removals can significantly affect landscape nutrient flux, municipal water storage, recreational use of lakes and rivers, property values, hydroelectricity generation, the cultural meaning of dams, and many other river-based ecosystem services. We use a production possibility frontiers approach to explore dam decision scenarios and opportunities for trading between ecosystem services that are positively or negatively affected by dam removal in New England. Scenarios that provide efficient trade off potentials are identified using a multiobjective genetic algorithm. Our results suggest that for many river systems, there is a significant potential to increase the value of fisheries and other ecosystem services with minimal dam removals, and further increases are possible by including decisions related to dam operations and physical modifications. Run-of-river dams located near the head of tide are often found to be optimal for removal due to low hydroelectric capacity and high impact on fisheries. Conversely, dams with large impoundments near a river's headwaters can be less optimal for dam removal because their value as nitrogen sinks often outweighs the potential value for fisheries. Hydropower capacity is negatively impacted by dam removal but there are opportunities to meet or exceed lost capacity by upgrading preserved hydropower dams. Improving fish passage facilities for dams that are critical for safety or water storage can also reduce impacts on fisheries. Our

  6. Dam safety investigations of the concrete structures of Hugh Keenleyside dam

    International Nuclear Information System (INIS)

    Hanna, A.W.; Nunn, J.O.H.; Cornish, L.; Northcott, P.

    1993-01-01

    The Hugh Keenleyside dam is located on the Columbia River in southeastern British Columbia, and impounds Arrow Lakes Reservoir which has a live storage of 8.8 km 3 and drains an area of 36,000 km 2 . It consists of a number of concrete structures, with a total length of 360 m and a maximum height of 58 m, and an earthfill embankment which spans across the original river channel. The 450 m long zoned earthfill dam is founded on pervious alluvium over 150 m deep. It has a sloping impervious core constructed from glacial till which extends 670 m upstream of the dam. This impervious blanket extends over the full width of the reservoir and is connected to the upstream face of the concrete structures. The results of a dam safety study, which was carried out due to the presence of high uplift pressures at some parts of the foundation, and stability concerns, are presented. The investigation concluded that the high uplift pressures were due to a localized defect in the upstream blanket and did not indicate any general deterioration of the blanket. Techniques that were found to be of particular use in the study for defining the source and nature of the foundation defects were: temperature surveys of flows from piezometers, cells and drains; air injection tests; and pressure response testing of cells, piezometers and drains to establish foundation interconnections. The concrete structures met the stability criteria for all load cases considered except for the navigation lock and the low level outlets. 3 refs., 6 figs

  7. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  8. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  9. Riparian soil development linked to forest succession above and below dams along the Elwha River, Washington, USA

    Science.gov (United States)

    Perry, Laura G; Shafroth, Patrick B.; Perakis, Steven

    2017-01-01

    Riparian forest soils can be highly dynamic, due to frequent fluvial disturbance, erosion, and sediment deposition, but effects of dams on riparian soils are poorly understood. We examined soils along toposequences within three river segments located upstream, between, and downstream of two dams on the Elwha River to evaluate relationships between riparian soil development and forest age, succession, and channel proximity, explore dam effects on riparian soils, and provide a baseline for the largest dam removal in history. We found that older, later-successional forests and geomorphic surfaces contained soils with finer texture and greater depth to cobble, supporting greater forest floor mass, mineral soil nutrient levels, and cation exchange. Forest stand age was a better predictor than channel proximity for many soil characteristics, though elevation and distance from the channel were often also important, highlighting how complex interactions between fluvial disturbance, sediment deposition, and biotic retention regulate soil development in this ecosystem. Soils between the dams, and to a lesser extent below the lower dam, had finer textures and higher mineral soil carbon, nitrogen, and cation exchange than above the dams. These results suggested that decreased fluvial disturbance below the dams, due to reduced sediment supply and channel stabilization, accelerated soil development. In addition, reduced sediment supply below the dams may have decreased soil phosphorus. Soil δ15N suggested that salmon exclusion by the dams had no discernable effect on nitrogen inputs to upstream soils. Recent dam removal may alter riparian soils further, with ongoing implications for riparian ecosystems.

  10. A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

    Science.gov (United States)

    Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

    2018-04-01

    We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

  11. Large Dam Effects on Flow Regime and Hydraulic Parameters of river (Case study: Karkheh River, Downstream of Reservoir Dam

    Directory of Open Access Journals (Sweden)

    Farhang Azarang

    2017-06-01

    HEC-RAS model were obtained for the conditions before and after the construction of the Karkheh Reservoir Dam and then it was reviewed and analyzed. Results and Discussion: By exploiting the Karkheh Reservoir Dam, the river flow was changed from the natural condition to the regulatory situation. The results indicate that the river flow was considerably declined because the regulatory effect of the reservoir dam which has contributed to the great alternations at hydraulic parameters of the river. For example, the mean annual discharge of the Karkheh River shows 44pecent reduction during the time period of simulating (after the dam construction in comparison with the natural river flow before construction of reservoir dam in PayePol hydrometric station. Flow velocity of Karkheh River is influenced by discharge, slope of the river channel and geometry of cross section. By increasing the river flow, the flow velocity has increased and there is a significant difference between pre and post-dam condition at the mean velocity of river flow in different sections. The flow area is directly influenced by river discharge and there is a significant difference in the maximum defined discharge before and after dam construction. The width of water surface is a parameter of the geometric situation of the river cross section that also shows the maximum width of the cross sections, passing discharge through the desired cross section. Since Karkheh River has a relatively large water surface width, it has a high wetted perimeter. For this reason, the Karkheh river hydraulic radius is usually low. The significant reduction of all these quantities is for reduction of flow rate by construction of Karkheh Reservoir Dam. Studying the water surface profiles represents reduction of water level in the longitudinal profile of Karkheh River and water level of hydrometric stations by construction of the Karkheh Reservoir Dam. Also, due to the reduction of the discharge in the downstream of Karkheh

  12. Synthesizing biomolecule-based Boolean logic gates.

    Science.gov (United States)

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2013-02-15

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

  13. Synthesizing Biomolecule-based Boolean Logic Gates

    Science.gov (United States)

    Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

    2012-01-01

    One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

  14. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  15. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  16. WAC Bennett Dam - the characterization of a crest sinkhole

    Energy Technology Data Exchange (ETDEWEB)

    Stewart, R.A.; Gaffran, P.C. [British Columbia Hydro, Burnaby, BC (Canada); Watts, B.D. [Klohn-Crippen Consultants Ltd., Richmond, BC (Canada); Sobkowicz, J.C. [Thurber Engineering Ltd., Vancouver, BC (Canada); Kupper, A.G. [AGRA Earth and Environmental, Edmonton, AB (Canada)

    1998-11-01

    In June, 1996, a small hole was discovered in the asphaltic concrete road on the crest of the 183 m high WAC Bennett Dam on the Peace River in northeastern British Columbia. Examination of the hole resulted in a sinkhole on the dam crest. The sinkhole was 2.5 m in diameter and 7 m deep. Speculation was that the cavity was likely associated in some way with a buried survey benchmark tube. An investigation was immediately planned and executed to characterize the sinkhole, to determine the extent of damage and the safety status of this very large dam. British Columbia`s Dam Safety Regulator made the decision to lower the reservoir level. During the reservoir drawdown, various surface geophysical techniques were used to investigate the condition of the dam beyond the sinkholes. Intrusive investigations of the sinkhole were also planned. This involved trial drilling and downhole geophysical surveys in intact portions of the core at locations far from the sinkhole. The objectives and criteria developed for the investigation program are summarized. Scope of key activities at the sinkhole and important lessons learned during the investigation are also described. 9 refs., 15 figs.

  17. Estimated strength of shear keys in concrete dams

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, D.D. [Hatch Energy, Niagara Falls, ON (Canada); Lum, K.K.Y. [BC Hydro, Burnaby, BC (Canada)

    2008-07-01

    BC Hydro requested that Hatch Energy review the seismic stability of Ruskin Dam which was constructed in 1930 at Hayward Lake in British Columbia. The concrete gravity dam is founded nearly entirely on rock in a narrow valley. The vertical joints between blocks are keyed and grouted. The strength of the shear keys was assessed when a non-linear finite element model found that significant forces were being transferred laterally to the abutments during an earthquake. The lateral transfer of loads to the abutment relies on the strength of the shear keys. The dynamic finite element analysis was used to determine the stability of the dam. A review of the shear strength measurements reported in literature showed that the measurements compared well to those obtained by BC Hydro from cores taken from Ruskin Dam. The cohesive strength obtained using the Griffith failure criteria was also in good agreement with both sets of measurements. A simple ultimate shear strength equation was developed using the Mohr-Coulomb failure criteria to determine combined cohesive and frictional strength of shear keys. Safety factors of 2.0 for static loads and 1.5 for seismic loads were proposed to reduce the ultimate strength to allowable values. It was concluded that given the relatively high shear strength established for the shear keys, the abutment rock or dam/abutment contact will control the amount of load which can arch to the abutments. 8 refs., 4 tabs., 5 figs.

  18. Effects of Experimental High Flow Releases and Increased Fluctuations in Flow from Glen Canyon Dam on Abundance, Growth, and Survival Rates of Early Life Stages of Rainbow Trout in the Lee's Ferry Reach of the Colorado River

    Science.gov (United States)

    Korman, Josh

    2010-05-01

    The abundance of adult fish populations is controlled by the growth and survival rates of early life stages. Evaluating the effects of flow regimes on early life stages is therefore critical to determine how these regimes affect the abundance of adult populations. Experimental high flow releases from Glen Canyon Dam, primarily intended to conserve fine sediment and improve habitat conditions for native fish in the Colorado River in Grand Canyon, AZ, have been conducted in 1996, 2004, and 2008. These flows potentially affect the Lee's Ferry reach rainbow trout population, located immediately downstream of the dam, which supports a highly valued fishery and likely influences the abundance of rainbow trout in Grand Canyon. Due to concerns about negative effects of high trout abundance on endangered native fish, hourly variation in flow from Glen Canyon Dam was experimentally increased between 2003 and 2005 to reduce trout abundance. This study reports on the effects of experimental high flow releases and fluctuating flows on early life stages of rainbow trout in the Lee's Ferry reach based on monthly sampling of redds (egg nests) and the abundance and growth of age-0 trout between 2003 and 2009. Data on spawn timing, spawning elevations, and intergravel temperatures were integrated in a model to estimate the magnitude and seasonal trend in incubation mortality resulting from redd dewatering due to fluctuations in flow. Experimental fluctuations from January through March promoted spawning at higher elevations where the duration of dewatering was longer and intergravel temperatures exceeded lethal thresholds. Flow-dependent incubation mortality rates were 24% (2003) and 50% (2004) in years with higher flow fluctuations, compared to 5-11% under normal operations (2006-2009). Spatial and temporal predictions of mortality were consistent with direct observations of egg mortality determined from the excavation of 125 redds. The amount of variation in backcalculated hatch

  19. New guidelines for dam safety classification

    International Nuclear Information System (INIS)

    Dascal, O.

    1999-01-01

    Elements are outlined of recommended new guidelines for safety classification of dams. Arguments are provided for the view that dam classification systems should require more than one system as follows: (a) classification for selection of design criteria, operation procedures and emergency measures plans, based on potential consequences of a dam failure - the hazard classification of water retaining structures; (b) classification for establishment of surveillance activities and for safety evaluation of dams, based on the probability and consequences of failure - the risk classification of water retaining structures; and (c) classification for establishment of water management plans, for safety evaluation of the entire project, for preparation of emergency measures plans, for definition of the frequency and extent of maintenance operations, and for evaluation of changes and modifications required - the hazard classification of the project. The hazard classification of the dam considers, as consequence, mainly the loss of lives or persons in jeopardy and the property damages to third parties. Difficulties in determining the risk classification of the dam lie in the fact that no tool exists to evaluate the probability of the dam's failure. To overcome this, the probability of failure can be substituted for by a set of dam characteristics that express the failure potential of the dam and its foundation. The hazard classification of the entire project is based on the probable consequences of dam failure influencing: loss of life, persons in jeopardy, property and environmental damage. The classification scheme is illustrated for dam threatening events such as earthquakes and floods. 17 refs., 5 tabs

  20. Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

    Science.gov (United States)

    Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis

    2011-05-01

    A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green's Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V G, i.e. an improved slope characteristic, and hence an improved Ion/ Ioff ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant Ion/ Ioff ratio improvement, even with threshold voltage below 0.2 V and supply voltage V dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.

  1. Research on shape optimization of CSG dams

    Directory of Open Access Journals (Sweden)

    Xin Cai

    2011-12-01

    Full Text Available The multi-objective optimization method was used for shape optimization of cement sand and gravel (CSG dams in this study. The economic efficiency, the sensitivities of maximum horizontal displacement and maximum settlement of the dam to water level changes, the overall stability, and the overall strength security were taken into account during the optimization process. Three weight coefficient selection schemes were adopted to conduct shape optimization of a dam, and the case studies lead to the conclusion that both the upstream and downstream dam slope ratios for the optimal cross-section equal 1:0.7, which is consistent with the empirically observed range of 1:0.6 to 1:0.8 for the upstream and downstream dam slope ratios of CSG dams. Therefore, the present study is of certain reference value for designing CSG dams.

  2. Dynamic tests at the Outardes 3 dam

    International Nuclear Information System (INIS)

    Proulx, J.; Paultre, P.; Duron, Z.; Tai Mai Phat; Im, O.

    1992-01-01

    At the Outardes 3 gravity dam, part of the Manicouagan-Outardes hydroelectric complex in northeastern Quebec, forced vibration tests were carried out using an eccentric mass shaker attached to the dam crest at three different locations. Accelerations were measured along the crest and in the inspection galleries, and hydrodynamic pressures were measured along the upstream dam face and at various locations in the reservoir. The tests were designed to analyze the effects of gravity dam-reservoir interactions and to generate a data base for calibrating finite element models used in studying the dynamic behavior of gravity dams. Experimental results are presented in order to demonstrate the quality of the data obtained and the effectiveness of the experimental procedures. Modes of vibration were observed which corresponded to those obtained by finite element analysis. It is shown that techniques recently developed for dynamic tests on large dams can be successfully used on gravity dams. 3 refs., 6 figs

  3. The effect of frizzle gene and dwarf gene on reproductive performance of broiler breeder dams under high and normal ambient temperatures.

    Science.gov (United States)

    Sharifi, A R; Horst, P; Simianer, H

    2010-11-01

    In 3 experimental runs, the influence of genotype × temperature interactions on the reproductive traits (sexual maturity, egg production, fertility, hatchability, and chick production) of hens of a broiler breeder dam line carrying major genes for dwarfism (dw-) and frizzle (F) was investigated. In experiments 1 and 2, the hens were caged individually under hot (30°C) and temperate (19°C) temperatures, from wk 18 to 72 of age, whereas in experiment 3, hens were kept under moderate temperature (24°C). Hens in experiment 1 were heterozygous for the frizzle gene, and those in experiments 2 and 3 were homozygous, both with and without the dwarf gene. Hens without the above-mentioned major genes (ffDw-) served as control lines. In experiment 1, the frizzle gene (Ff) had no significant effect on sexual maturity, egg production, fertility, hatchability, and chick number under the 2 environmental conditions. In experiment 2, there was a significant interaction between feathering genotype (FF) and environmental temperature for all traits except sexual maturity. Under heat stress, there was a distinct reduction in all reproductive traits except sexual maturity for normally feathered hens compared with frizzle-feathered hens, whereas under temperate conditions, egg production and number of chicks of the FF genotype were reduced and sexual maturity was delayed. In experiments 1 and 2, the dw- gene showed a depressive effect on the growth of hens. In experiment 1, the interaction between dwarf genotype and environmental temperature for egg production was significant. Under temperate conditions, the egg production of dwarf hens was inferior to that of normally sized birds, whereas under hot temperatures, the egg production of the 2 body sizes did not differ. In experiment 2, for sexual maturity, egg production and fertility locus × locus interactions could be determined. The genotype combining the 2 major genes (FFdw-) proved to be inferior to the normally feathered dwarf

  4. Proceedings of the 2010 Canadian Dam Association's public safety around dams workshop

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2010-07-01

    Nearly 30 people have drowned in dam-related incidents over the last 10 years in Canada. The Canadian public is now calling for improved safety guidelines. Public interaction with dams is increasing as a result of interest in extreme sports and perceived rights of access. However, many members of the public are not aware of the dangers posed by dams. This workshop provided a forum to discuss proposals for a draft publication of the Canadian Dam Association (CDA) guidelines for public safety and security around dams. Issues related to current legislation and liability were discussed. Methods of increasing public awareness of the hazards posed by dams included increased signage in dam locations, the use of audible and visual alert systems, and the use of booms and buoys. The responsibilities of dam owners in ensuring the safety of dams were also discussed. The conference featured 5 presentations, of which 2 have been catalogued separately for inclusion in this database. tabs., figs.

  5. Study of Dam-break Due to Overtopping of Four Small Dams in the Czech Republic

    Directory of Open Access Journals (Sweden)

    Zakaraya Alhasan

    2015-01-01

    Full Text Available Dam-break due to overtopping is one of the most common types of embankment dam failures. During the floods in August 2002 in the Czech Republic, several small dams collapsed due to overtopping. In this paper, an analysis of the dam break process at the Luh, Velký Bělčický, Melín, and Metelský dams breached during the 2002 flood is presented. Comprehensive identification and analysis of the dam shape, properties of dam material and failure scenarios were carried out after the flood event to assemble data for the calibration of a numerical dam break model. A simple one-dimensional mathematical model was proposed for use in dam breach simulation, and a computer code was compiled. The model was calibrated using the field data mentioned above. Comparison of the erodibility parameters gained from the model showed reasonable agreement with the results of other authors.

  6. Management of dams for the next Millennium: proceedings of the 1999 Canadian Dam Association

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-07-01

    The meeting featured seven sessions with 18 papers abstracted/indexed therein as follows: keynote address: tailings dams safety - implications for the dam safety community; 1 - design and performance: performance monitoring of dams: are we doing what we should be doing?; tailings dams from the perspective of conventional dam engineering; and design overview of Syncrude's Mildred Lake east toe berm; 2 - design and modelling: use of a 2D model for a dam break study on the ALCAN hydroelectric complex in Quebec; and spillway design implications resulting from changes in rainfall extremes; 3 - risk and dam safety I: closing the gaps in the dam safety guidelines; the reality of life safety consequence classification; and surveillance practices for the next millenium; 4 - risk and dam safety II: quantitative risk-assessment using the capacity-demand analysis; and new guidelines for dam safety classification; 5 - millenium issues: expectations of immortality, dam safety management into the next millenium; 6 - rehabilitation techniques: the unconventional application of conventional materials; nondestructive testing technology to characterize concrete dam/bedrock interface; method and instrument for detecting crack in concrete; and grouting of the cracks in the Arch 5-6 - Daniel Johnson Dam; and 7 - case studies: rehabilitation of an 80 year old Ambursen type dam; and debris booms for the protection of spillways.

  7. Evaluating temporal changes in hydraulic conductivities near karst-terrain dams: Dokan Dam (Kurdistan-Iraq)

    Science.gov (United States)

    Dafny, Elad; Tawfeeq, Kochar Jamal; Ghabraie, Kazem

    2015-10-01

    Dam sites provide an outstanding opportunity to explore dynamic changes in the groundwater flow regime because of the high hydraulic gradient rapidly induced in their surroundings. This paper investigates the temporal changes of the hydraulic conductivities of the rocks and engineered structures via a thorough analysis of hydrological data collected at the Dokam Dam, Iraq, and a numerical model that simulates the Darcian component of the seepage. Analysis of the data indicates increased seepage with time and suggests that the hydraulic conductivity of the rocks increased as the conductivity of the grout curtain decreased. Conductivity changes on the order of 10-8 m/s, in a 20-yr period were quantified using the numerical analysis. It is postulated that the changes in hydraulic properties in the vicinity of Dokan Dam are due to suspension of fine materials, interbedded in small fissures in the rocks, and re-settlement of these materials along the curtain. Consequently, the importance of the grout curtain to minimize the downstream seepage, not only as a result of the conductivity contrast with the rocks, but also as a barrier to suspended clay sediments, is demonstrated. The numerical analysis also helped us to estimate the proportion of the disconnected karstic conduit flow to the overall flow.

  8. Social Discounting of Large Dams with Climate Change Uncertainty

    Directory of Open Access Journals (Sweden)

    Marc Jeuland

    2010-06-01

    This paper reviews the recent discounting controversy and examines its implications for the appraisal of an illustrative hydropower project in Ethiopia. The analysis uses an integrated hydro-economic model that accounts for how the dam’s transboundary impacts vary with climate change. The real value of the dam is found to be highly sensitive to assumptions about future economic growth. The argument for investment is weakest under conditions of robust global economic growth, particularly if these coincide with unfavourable hydrological or development factors related to the project. If however long-term growth is reduced, the value of the dam tends to increase. There may also be distributional or local arguments favouring investment, if growth in the investment region lags behind that of the rest of the globe. In such circumstances, a large dam can be seen as a form of insurance that protects future vulnerable generations against the possibility of macroeconomic instability or climate shocks.

  9. Sediment trapping by dams creates methane emission hot spots

    DEFF Research Database (Denmark)

    Maeck, A.; Delsontro, T.; McGinnis, Daniel F.

    2013-01-01

    Inland waters transport and transform substantial amounts of carbon and account for similar to 18% of global methane emissions. Large reservoirs with higher areal methane release rates than natural waters contribute significantly to freshwater emissions. However, there are millions of small dams...... worldwide that receive and trap high loads of organic carbon and can therefore potentially emit significant amounts of methane to the atmosphere. We evaluated the effect of damming on methane emissions in a central European impounded river. Direct comparison of riverine and reservoir reaches, where...... sedimentation in the latter is increased due to trapping by dams, revealed that the reservoir reaches are the major source of methane emissions (similar to 0.23 mmol CH4 m(-2) d(-1) vs similar to 19.7 mmol CH4 m(-2) d(-1), respectively) and that areal emission rates far exceed previous estimates for temperate...

  10. Impact of dam-building on marine life

    Science.gov (United States)

    Pandian, T. J.

    1980-03-01

    Dam-building across naturally flowing rivers tends to decrease discharge of surplus water into the sea, reduce nutrient concentration in estuaries and coastal waters, and diminish plankton blooms as well as fish landings. Depletion of nutrients and organic matter along with reduced mud and silt deposition affect benthic life on the continental shelf. Reduced mud and silt deposition leads to coastal retreat. Dams, especially those constructed for hydro-electric purposes, hinder migration of fishes and decapods. Discharge from dams can create barriers at high or low flows, cause delays, disrupt normal behavioural routine and change the travel speed of migratory animals. Where all spawners of a given population are frequently kept away from the breeding site, the population faces extinction.

  11. Probing Dense Sprays with Gated, Picosecond, Digital Particle Field Holography

    Directory of Open Access Journals (Sweden)

    James Trolinger

    2011-12-01

    Full Text Available This paper describes work that demonstrated the feasibility of producing a gated digital holography system that is capable of producing high-resolution images of three-dimensional particle and structure details deep within dense particle fields of a spray. We developed a gated picosecond digital holocamera, using optical Kerr cell gating, to demonstrate features of gated digital holography that make it an exceptional candidate for this application. The Kerr cell gate shuttered the camera after the initial burst of ballistic and snake photons had been recorded, suppressing longer path, multiple scattered illumination. By starting with a CW laser without gating and then incorporating a picosecond laser and an optical Kerr gate, we were able to assess the imaging quality of the gated holograms, and determine improvement gained by gating. We produced high quality images of 50–200 μm diameter particles, hairs and USAF resolution charts from digital holograms recorded through turbid media where more than 98% of the light was scattered from the field. The system can gate pulses as short as 3 mm in pathlength (10 ps, enabling image-improving features of the system. The experiments lead us to the conclusion that this method has an excellent capability as a diagnostics tool in dense spray combustion research.

  12. Evaluation of three-dimensional navigator-gated whole heart MR coronary angiography: The importance of systolic imaging in subjects with high heart rates

    International Nuclear Information System (INIS)

    Wu Yenwen; Tadamura, Eiji; Yamamuro, Masaki; Kanao, Shotaro; Nakayama, Kazuki; Togashi, Kaori

    2007-01-01

    Purpose: To evaluate the influence of heart rate (HR) on magnetic resonance coronary angiography (MRCA) image quality in diastolic and systolic phases. Materials and methods: Twenty-seven healthy volunteers (9 men; 33 ± 9 years, HR 53-110 bpm), were evaluated with the electrocardiography and three-dimensional navigator-gating MRCA in a 1.5-T MR scanner (Avanto, Siemens) in diastolic and systolic phases (steady-state free precession; TR/TE/flip angle = 3.2 ms/1.6 ms/90 o ). The timing of scanning was individually adapted to the cardiac rest periods obtained in the prescanning, by visually identifying when the movement of right coronary artery was minimized during diastole and systole. Images of two phases were side-by-side compared on a four-point scale (from 1 = poor to 4 = excellent visibility; score of 3 or 4 as diagnostic). Results: Of 13 subjects with HR ≤65 bpm (low HR group, mean 59.8 ± 4.9 bpm, range 53-65), the image quality scores were significantly better than that with higher heart rates (73.9 ± 9.0 bpm, range 68-110) in diastolic MRCA. The image quality was significantly improved during systole in high HR group. Overall, 91.3% of low HR group had MRCA image of diagnostic quality acquired at diastole, while 88.3% of high HR group had diagnostic images at systole by segmental analysis (p = NS). Conclusions: MRCA at systole offered superior quality in patients with high heart rates

  13. A primary scintillation gated high pressure position sensitive gas scintillation proportional counter (HPGSPC) for applications to x-ray astronomy

    International Nuclear Information System (INIS)

    Giarrusso, S.; Manzo, G.; Re, S.

    1985-01-01

    The authors describe a new instrument for x-ray astronomy. The instrument, based on a high pressure (5 atm.), xenon filled, position sensitive Gas Scintillation Proportional counter (HPGSPC) is expected to feature an energy resolution better than 4% at 60 keV, an angular resolution of approximately 20 arc-minutes over the full energy range (4 to 100 keV) and a field of view (FOV) of up to 30x30 degrees. A prototype flight unit of the gas cell on which the instrument is based is presently under technological development in the framework of the SAX project

  14. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  15. Study of flow rate across alluvial deposits in rockfill dams

    International Nuclear Information System (INIS)

    Massiera, M.; Comeau, S.; Cyr, R.

    1996-01-01

    The hydraulic behaviour of the till core of the LG-4 main dam at the James Bay hydroelectric development in northern Quebec, was simulated in order to explain the abnormally high pore pressures that have been observed in the downstream portion of cores in a number of earth and rockfill dams. Procedures followed and the hydraulic conductivities adopted in this study were outlined. Results of a comparison of the equipotential lines at the calculated piezometric heads with in-situ measurements were also provided. 6 refs., 7 figs

  16. BWR reactor water cleanup system flexible wedge gate isolation valve qualification and high energy flow interruption test

    International Nuclear Information System (INIS)

    DeWall, K.G.; Steele, R. Jr.

    1989-10-01

    This report presents the results of research performed to develop technical insights for the NRC effort regarding Generic Issue 87, ''Failure of HPCI Steam Line Without Isolation.'' Volume III of this report contains the data and findings from the original research performed to assess the qualification of the valves and reported in EGG-SSRE-7387, ''Qualification of Valve Assemblies in High Energy BWR Systems Penetrating Containment.'' We present the original work here to complete the documentation trail. The recommendations contained in Volume III of this report resulted in the test program described in Volume I and II. The research began with a survey to characterize the population of normally open containment isolation valves in those process lines that connect to the primary system and penetrate containment. The qualification methodology used by the various manufacturers identified in the survey is reviewed and deficiencies in that methodology are identified. Recommendations for expanding the qualification of valve assemblies for high energy pipe break conditions are presented. 11 refs., 1 fig., 2 tabs

  17. Coupled models in dam engineering

    OpenAIRE

    González Gutiérrez, María De Los Ángeles

    2016-01-01

    Rock ll dams are certainly one of the most important engineering structures due to their economic advantages and exible design. Unfortunately their vulnerability to overtopping still remains their weakest point. For that reason, several research groups are interested in both the numerical and experimental analysis of this phenomenon. In this work we focused on the numerical analysis. The previous work developed in CIMNE on a coupled PFEM-Eulerian free surface Compu- tational...

  18. Environmental monitoring at Olympic Dam

    International Nuclear Information System (INIS)

    Anon.

    1989-01-01

    The environmental management and protection program at the Olympic Dam uranium/copper/gold project, Roxby Downs, South Australia, monitors eight major environmental parameters - meteorology, vegetation, mine site rehabilitation, fauna, terrain, soil salinity, hydrogeology and well fields. It came into effect with the approval of the South Australian Government in March 1987. The Great Artesian Basin, one of the world's greatest artesian basins, is the source of the water supply for the project

  19. Mitigating Dam Impacts Using Environmental Flow Releases

    Science.gov (United States)

    Richter, B. D.

    2017-12-01

    One of the most ecologically disruptive impacts of dams is their alteration of natural river flow variability. Opportunities exist for modifying the operations of existing dams to recover many of the environmental and social benefits of healthy ecosystems that have been compromised by present modes of dam operation. The potential benefits of dam "re-operation" include recovery of fish, shellfish, and other wildlife populations valued both commercially and recreationally, including estuarine species; reactivation of the flood storage and water purification benefits that occur when floods are allowed to flow into floodplain forests and wetlands; regaining some semblance of the naturally dynamic balance between river erosion and sedimentation that shapes physical habitat complexity, and arresting problems associated with geomorphic imbalances; cultural and spiritual uses of rivers; and many other socially valued products and services. Assessing the potential benefits of dam re-operation begins by characterizing the dam's effects on the river flow regime, and formulating hypotheses about the ecological and social benefits that might be restored by releasing water from the dam in a manner that more closely resembles natural flow patterns. These hypotheses can be tested by implementing a re-operation plan, tracking the response of the ecosystem, and continually refining dam operations through adaptive management. This presentation will highlight a number of land and water management strategies useful in implementing a dam re-operation plan, with reference to a variety of management contexts ranging from individual dams to cascades of dams along a river to regional energy grids. Because many of the suggested strategies for dam re-operation are predicated on changes in the end-use of the water, such as reductions in urban or agricultural water use during droughts, a systemic perspective of entire water management systems will be required to attain the fullest possible

  20. Passage and survival probabilities of juvenile Chinook salmon at Cougar Dam, Oregon, 2012

    Science.gov (United States)

    Beeman, John W.; Evans, Scott D.; Haner, Philip V.; Hansel, Hal C.; Hansen, Amy C.; Smith, Collin D.; Sprando, Jamie M.

    2014-01-01

    This report describes studies of juvenile-salmon dam passage and apparent survival at Cougar Dam, Oregon, during two operating conditions in 2012. Cougar Dam is a 158-meter tall rock-fill dam used primarily for flood control, and passes water through a temperature control tower to either a powerhouse penstock or to a regulating outlet (RO). The temperature control tower has moveable weir gates to enable water of different elevations and temperatures to be drawn through the dam to control water temperatures downstream. A series of studies of downstream dam passage of juvenile salmonids were begun after the National Oceanic and Atmospheric Administration determined that Cougar Dam was impacting the viability of anadromous fish stocks. The primary objectives of the studies described in this report were to estimate the route-specific fish passage probabilities at the dam and to estimate the survival probabilities of fish passing through the RO. The first set of dam operating conditions, studied in November, consisted of (1) a mean reservoir elevation of 1,589 feet, (2) water entering the temperature control tower through the weir gates, (3) most water routed through the turbines during the day and through the RO during the night, and (4) mean RO gate openings of 1.2 feet during the day and 3.2 feet during the night. The second set of dam operating conditions, studied in December, consisted of (1) a mean reservoir elevation of 1,507 ft, (2) water entering the temperature control tower through the RO bypass, (3) all water passing through the RO, and (4) mean RO gate openings of 7.3 feet during the day and 7.5 feet during the night. The studies were based on juvenile Chinook salmon (Oncorhynchus tshawytscha) surgically implanted with radio transmitters and passive integrated transponder (PIT) tags. Inferences about general dam passage percentage and timing of volitional migrants were based on surface-acclimated fish released in the reservoir. Dam passage and apparent

  1. levels of heavy metals in gubi dam water bauchi, nigeria

    African Journals Online (AJOL)

    Ada

    copper and lead were always highest in the suspended materials which indicate the dominant role played by ... essential. However, at high concentrations, these trace metals become toxic (Nurnberg, 1982). Heavy metals in .... mobilization of cobalt minerals into the dam. .... Interaction between sediments and fresh water ...

  2. Effects of High-Flow Experiments from Glen Canyon Dam on Abundance, Growth, and Survival Rates of Early Life Stages of Rainbow Trout in the Lees Ferry Reach of the Colorado River

    Science.gov (United States)

    Korman, Josh; Kaplinski, Matthew; Melis, Theodore S.

    2010-01-01

    High-flow experiments (HFEs) from Glen Canyon Dam are primarily intended to conserve fine sediment and improve habitat conditions for native fish in the Colorado River as it flows through Grand Canyon National Park, Arizona. These experimental flows also have the potential to affect the rainbow trout (Oncorhynchus mykiss) population in the Lees Ferry tailwater reach immediately below the dam, which supports a highly valued recreational fishery and likely influences the abundance of rainbow trout in Grand Canyon. Understanding how flow regimes affect the survival and growth of juvenile rainbow trout is critical to interpreting trends in adult abundance. This study reports on the effects of HFEs in 2004 and 2008 on early life stages of rainbow trout in the Lees Ferry reach on the basis of monthly sampling of redds (egg nests) and the abundance of the age-0 trout (fertilization to about 1 to 2 months from emergence) and their growth during a 7-year period between 2003 and 2009. Multiple lines of evidence indicate that the March 2008 HFE resulted in a large increase in early survival rates of age-0 trout because of an improvement in habitat conditions. A stock-recruitment analysis demonstrated that age-0 abundance in July 2008 was more than fourfold higher than expected, given the number of viable eggs that produced these fish. A hatch-date analysis showed that early survival rates were much higher for cohorts that hatched about 1 month after the 2008 HFE (about April 15, 2008) relative to those fish that hatched before this date. These cohorts, fertilized after the 2008 HFE, would have emerged into a benthic invertebrate community that had recovered, and was possibly enhanced by, the HFE. Interannual differences in growth of age-0 trout, determined on the basis of otolith microstructure, support this hypothesis. Growth rates in the summer and fall of 2008 (0.44 mm/day) were virtually the same as in 2006 (0.46 mm/day), the highest recorded during 6 years, even though

  3. Geomorphic and habitat response to a large-dam removal in a Mediterranean river

    Science.gov (United States)

    Harrison, L.; East, A. E.; Smith, D. P.; Bond, R.; Logan, J. B.; Nicol, C.; Williams, T.; Boughton, D. A.; Chow, K.

    2017-12-01

    The presence of large dams has fundamentally altered physical and biological processes in riverine ecosystems, and dam removal is becoming more common as a river restoration strategy. We used a before-after-control-impact study design to investigate the geomorphic and habitat response to removal of 32-m-high San Clemente Dam on the Carmel River, CA. The project represents the first major dam removal in a Mediterranean river and is also unique among large dam removals in that most reservoir sediment was sequestered in place. We found that in the first year post-removal, a sediment pulse migrated 3.5 km downstream, filling pools and the interstitial pore spaces of gravels with sand. These sedimentary and topographic changes initially reduced the overall quality of steelhead (O. mykiss) spawning and rearing habitat in impacted reaches. Over the second winter after dam removal, a sequence of high flows flushed large volumes of sand from pools and mobilized the river bed throughout much of the active channel. The floods substantially altered fluvial evolution in the upper part of the reservoir, promoting new avulsion and the subsequent delivery of gravel and large wood to below dam reaches. These geomorphic processes increased the availability of spawning-sized gravel and enhanced channel complexity in reaches within several km of the former dam, which should improve habitat for multiple life stages of steelhead. Results indicate that when most reservoir sediment remains impounded, high flows become more important drivers of geomorphic and habitat change than dam removal alone. In such cases, the rates at which biophysical processes are reestablished will depend largely on post-dam removal flow sequencing and the upstream supply of sediment and large wood.

  4. Sinkhole investigated at B.C. Hydro`s Bennett Dam

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1996-07-01

    The cause of a sinkhole which appeared in a roadway crossing an earth filled dam in B. C., was discussed. The hole measured 6 ft. across and 20 ft. deep, and occurred in B.C. Hydro`s W.A.C. Bennett Dam which measures 600 ft. high, 2,600 ft. wide at the base and 35 ft. wide at the crest. The cause of the sinkhole is not known, but it is believed that a weakness in the dam may have found its way to the surface via a pipe connected to a bedrock settlement gauge buried within the dam. Sonar and ground penetrating radar were used to examine the area. The hole has been filled with gravel and monitoring continues. Experts do not anticipate immediate risk of dam failure. 1 fig.

  5. Using causal maps to support ex-post assessment of social impacts of dams

    International Nuclear Information System (INIS)

    Aledo, Antonio; García-Andreu, Hugo; Pinese, José

    2015-01-01

    - Highlights: • We defend the usefulness of causal maps (CM) for ex-post impact assessment of dams. • Political decisions are presented as unavoidable technical measures. • CM enable the identification of multiple causes involved in the dam impacts. • An alternative management of the dams is shown from the precise tracking of the causes. • Participatory CM better the quality of information and the governance of the research. This paper presents the results of an ex-post assessment of two important dams in Brazil. The study follows the principles of Social Impact Management, which offer a suitable framework for analyzing the complex social transformations triggered by hydroelectric dams. In the implementation of this approach, participative causal maps were used to identify the ex-post social impacts of the Porto Primavera and Rosana dams on the community of Porto Rico, located along the High Paraná River. We found that in the operation of dams there are intermediate causes of a political nature, stemming from decisions based on values and interests not determined by neutral, exclusively technical reasons; and this insight opens up an area of action for managing the negative impacts of dams

  6. Numerical modeling and experimental validation of seismic uplift pressure variations in cracked concrete dams

    Energy Technology Data Exchange (ETDEWEB)

    Javanmardi, F.; Leger, P. [Ecole Polytechnique, Montreal, PQ (Canada). Dept. of Civil, Mining and Geological Engineering; Tinawi, R. [Quebec Univ., Montreal, PQ (Canada)

    2004-07-01

    Concrete dams could sustain cracking and damage during maximum design earthquakes (MDE). Dam safety guidelines are established so that dams maintain a stable condition following MDE oscillatory motions. In this study, a theoretical model was developed to calculate the uplift pressure variations along concrete cracks with moving walls. The proposed model was verified using experimental crack test data. The model was applied in a finite element computer program for dynamic analysis of gravity dams considering hydro-mechanical water-crack coupling. An analysis of a typical 90 metre dam subjected to low and high frequency sinusoidal accelerations demonstrated that water can penetrate into part of a seismically initiated crack. Pressure tends to develop in a region close to the crack mouth, therefore detrimental effects for the global dam stability are unlikely to occur. The study showed that the seismic uplift force during the heel crack opening mode is small compared to the dam weight. This preliminary study suggests that the critical sliding safety factors (SSF) of the dam against downstream sliding could be computed by considering zero uplift pressure in the crack region subjected to tensile opening. 14 refs., 1 tab., 7 figs.

  7. Using causal maps to support ex-post assessment of social impacts of dams

    Energy Technology Data Exchange (ETDEWEB)

    Aledo, Antonio, E-mail: Antonio.Aledo@ua.es [Departamento de Sociología 1, Universidad de Alicante, Alicante 03080 (Spain); García-Andreu, Hugo, E-mail: Hugo.Andreu@ua.es [Departamento de Sociología 1, Universidad de Alicante, Alicante 03080 (Spain); Pinese, José, E-mail: pinese@uel.br [Centro de Ciências Exatas, UEL, Rodovia Celso Cid, Km 380, Campus Universitário, Londrina, PR 86057-970 (Brazil)

    2015-11-15

    - Highlights: • We defend the usefulness of causal maps (CM) for ex-post impact assessment of dams. • Political decisions are presented as unavoidable technical measures. • CM enable the identification of multiple causes involved in the dam impacts. • An alternative management of the dams is shown from the precise tracking of the causes. • Participatory CM better the quality of information and the governance of the research. This paper presents the results of an ex-post assessment of two important dams in Brazil. The study follows the principles of Social Impact Management, which offer a suitable framework for analyzing the complex social transformations triggered by hydroelectric dams. In the implementation of this approach, participative causal maps were used to identify the ex-post social impacts of the Porto Primavera and Rosana dams on the community of Porto Rico, located along the High Paraná River. We found that in the operation of dams there are intermediate causes of a political nature, stemming from decisions based on values and interests not determined by neutral, exclusively technical reasons; and this insight opens up an area of action for managing the negative impacts of dams.

  8. Aylmer Dam : past, present and future; Barrage Aylmer : passe, present et futur

    Energy Technology Data Exchange (ETDEWEB)

    Giguere, H; Lehoux, B; Toma, G [Quebec Ministere du Developpement durable, de l' Environnement et des Parcs, Quebec, PQ (Canada). Centre d' Expertise Hydrique

    2006-07-01

    The Aylmer gravity dam was built in 1953 in Weedon in Quebec's Eastern Townships. The water reservoir retained by the Aylmer Dam has a capacity of 201,928,700 cubic metres and many houses and cottages now line its shores. As such, the water level must be kept high during the summer holiday season. The initial purpose of the dam was for log transportation, the regulation of the Saint-Francois River and the production of electricity. The retention structure belongs to the Quebec government and is managed by the Centre d'Expertise Hydrique du Quebec (CEHQ). Underwater inspection of the dam in 1998 showed signs of erosion damage that required repair. Five of the dam's seven sluices were equipped with stop logs while the others had metallic floodgates. The damage was caused by the preferential use of the 2 floodgates over the years. This paper described the 3 phases for modernizing the evacuation devices of this dam. The first phase began in 2003 with the repair of the dam. The second phase involved the construction of a more modern building in 2004, and the third phase involved the replacement of wooden girders with heated metallic sluices in 2005. The modernization of this dam has reduced the time for required for water evacuation operations during all seasons and has eliminated the danger linked to de-icing techniques. 1 ref., 8 figs.

  9. Rock Mass Behavior Under Hydropower Embankment Dams: A Two-Dimensional Numerical Study

    Science.gov (United States)

    Bondarchuk, A.; Ask, M. V. S.; Dahlström, L.-O.; Nordlund, E.

    2012-09-01

    Sweden has more than 190 large hydropower dams, of which about 50 are pure embankment dams and over 100 are concrete/embankment dams. This paper presents results from conceptual analyses of the response of typical Swedish rock mass to the construction of a hydropower embankment dam and its first stages of operation. The aim is to identify locations and magnitudes of displacements that are occurring in the rock foundation and grout curtain after construction of the dam, the first filling of its water reservoir, and after one seasonal variation of the water table. Coupled hydro-mechanical analysis was conducted using the two-dimensional distinct element program UDEC. Series of the simulations have been performed and the results show that the first filling of the reservoir and variation of water table induce largest magnitudes of displacement, with the greatest values obtained from the two models with high differential horizontal stresses and smallest spacing of sub-vertical fractures. These results may help identifying the condition of the dam foundation and contribute to the development of proper maintenance measures, which guarantee the safety and functionality of the dam. Additionally, newly developed dams may use these results for the estimation of the possible response of the rock foundation to the construction.

  10. Amplifying genetic logic gates.

    Science.gov (United States)

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  11. Cardiac gated ventilation

    International Nuclear Information System (INIS)

    Hanson, C.W. III; Hoffman, E.A.

    1995-01-01

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart

  12. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

    Science.gov (United States)

    Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

    2013-01-08

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

  13. Monitoring evaluation of a spillway pilaster for Premiere Chute Dam

    Energy Technology Data Exchange (ETDEWEB)

    Crepeau, Louis; Kassem, Chakib [OSMOS Canada Inc., Montreal, (Canada)

    2010-07-01

    The Premiere-Chute hydroelectric power station, commissioned in 1968, has four hydraulic turbines for a total of 130 MW. One of the pilasters of the dam weir, built with pre-stressed concrete, showed a crack at the level of the post-tension cable. This paper presented an evaluation of the behaviour of the pilaster in question, No. 9. The main goal was to prevent any disruption to the gate opening through adequate monitoring for a long term data follow-up. Six long-base OSMOS type optical sensors were installed on each face of the spillway pilaster. The behaviour of the No. 9 pilaster was then compared with that of other pilasters with respect to the effects of temperature and water level fluctuation in the dam. After the pilasters had been monitored for six months, it was found that No. 9 pilaster showed the least deformation of all. It was therefore concluded that the behaviour of this pilaster was normal.

  14. The changing hydrology of a dammed Amazon

    Science.gov (United States)

    Timpe, Kelsie; Kaplan, David

    2017-01-01

    Developing countries around the world are expanding hydropower to meet growing energy demand. In the Brazilian Amazon, >200 dams are planned over the next 30 years, and questions about the impacts of current and future hydropower in this globally important watershed remain unanswered. In this context, we applied a hydrologic indicator method to quantify how existing Amazon dams have altered the natural flow regime and to identify predictors of alteration. The type and magnitude of hydrologic alteration varied widely by dam, but the largest changes were to critical characteristics of the flood pulse. Impacts were largest for low-elevation, large-reservoir dams; however, small dams had enormous impacts relative to electricity production. Finally, the “cumulative” effect of multiple dams was significant but only for some aspects of the flow regime. This analysis is a first step toward the development of environmental flows plans and policies relevant to the Amazon and other megadiverse river basins. PMID:29109972

  15. Exporting dams: China's hydropower industry goes global.

    Science.gov (United States)

    McDonald, Kristen; Bosshard, Peter; Brewer, Nicole

    2009-07-01

    In line with China's "going out" strategy, China's dam industry has in recent years significantly expanded its involvement in overseas markets. The Chinese Export-Import Bank and other Chinese financial institutions, state-owned enterprises, and private firms are now involved in at least 93 major dam projects overseas. The Chinese government sees the new global role played by China's dam industry as a "win-win" situation for China and host countries involved. But evidence from project sites such as the Merowe Dam in Sudan demonstrates that these dams have unrecognized social and environmental costs for host communities. Chinese dam builders have yet to adopt internationally accepted social and environmental standards for large infrastructure development that can assure these costs are adequately taken into account. But the Chinese government is becoming increasingly aware of the challenge and the necessity of promoting environmentally and socially sound investments overseas.

  16. Measurement of Dam Deformations: Case Study of Obruk Dam (Turkey)

    Science.gov (United States)

    Gulal, V. Engin; Alkan, R. Metin; Alkan, M. Nurullah; İlci, Veli; Ozulu, I. Murat; Tombus, F. Engin; Kose, Zafer; Aladogan, Kayhan; Sahin, Murat; Yavasoglu, Hakan; Oku, Guldane

    2016-04-01

    In the literature, there is information regarding the first deformation and displacement measurements in dams that were conducted in 1920s Switzerland. Todays, deformation measurements in the dams have gained very different functions with improvements in both measurement equipment and evaluation of measurements. Deformation measurements and analysis are among the main topics studied by scientists who take interest in the engineering measurement sciences. The Working group of Deformation Measurements and Analysis, which was established under the International Federation of Surveyors (FIG), carries out its studies and activities with regard to this subject. At the end of the 1970s, the subject of the determination of fixed points in the deformation monitoring network was one of the main subjects extensively studied. Many theories arose from this inquiry, as different institutes came to differing conclusions. In 1978, a special commission with representatives of universities has been established within the FIG 6.1 working group; this commission worked on the issue of determining a general approach to geometric deformation analysis. The results gleaned from the commission were discussed at symposiums organized by the FIG. In accordance with these studies, scientists interested in the subject have begun to work on models that investigate cause and effect relations between the effects that cause deformation and deformation. As of the scientist who interest with the issue focused on different deformation methods, another special commission was established within the FIG engineering measurements commission in order to classify deformation models and study terminology. After studying this material for a long time, the official commission report was published in 2001. In this prepared report, studies have been carried out by considering the FIG Engineering Surveying Commission's report entitled, 'MODELS AND TERMINOLOGY FOR THE ANALYSIS OF GEODETIC MONITORING OBSERVATIONS

  17. Beaver dams and channel sediment dynamics on Odell Creek, Centennial Valley, Montana, USA

    Science.gov (United States)

    Levine, Rebekah; Meyer, Grant A.

    2014-01-01

    Beaver dams in streams are generally considered to increase bed elevation through in-channel sediment storage, thus, reintroductions of beaver are increasingly employed as a restoration tool to repair incised stream channels. Here we consider hydrologic and geomorphic characteristics of the study stream in relation to in-channel sediment storage promoted by beaver dams. We also document the persistence of sediment in the channel following breaching of dams. Nine reaches, containing 46 cross-sections, were investigated on Odell Creek at Red Rock Lakes National Wildlife Refuge, Centennial Valley, Montana. Odell Creek has a snowmelt-dominated hydrograph and peak flows between 2 and 10 m3 s- 1. Odell Creek flows down a fluvial fan with a decreasing gradient (0.018-0.004), but is confined between terraces along most of its length, and displays a mostly single-thread, variably sinuous channel. The study reaches represent the overall downstream decrease in gradient and sediment size, and include three stages of beaver damming: (1) active; (2) built and breached in the last decade; and (3) undammed. In-channel sediment characteristics and storage were investigated using pebble counts, fine-sediment depth measurements, sediment mapping and surveys of dam breaches. Upstream of dams, deposition of fine (≤ 2 mm) sediment is promoted by reduced water surface slope, shear stress and velocity, with volumes ranging from 48 to 182 m3. High flows, however, can readily transport suspended sediment over active dams. Variations in bed-sediment texture and channel morphology associated with active dams create substantial discontinuities in downstream trends and add to overall channel heterogeneity. Observations of abandoned dam sites and dam breaches revealed that most sediment stored above beaver dams is quickly evacuated following a breach. Nonetheless, dam remnants trap some sediment, promote meandering and facilitate floodplain development. Persistence of beaver dam sediment

  18. Using high-resolution suspended-sediment measurements to infer changes in the topographic distribution and grain size of bed sediment in the Colorado River downstream from Glen Canyon Dam

    Science.gov (United States)

    Topping, D. J.; Rubin, D. M.; Melis, T. S.; Wright, S. A.

    2004-12-01

    Eddy sandbars and other sandy deposits in and along the Colorado River in Grand Canyon National Park (GCNP) were an integral part of the pre-dam riverscape, and are still important for habitat, protection of archeological sites, and recreation. Recent work has shown that eddy bars are dynamic landforms and represent the bulk of the ecosystem's sand reserves. These deposits began eroding following the 1963 closure of Glen Canyon Dam that reduced the supply of sand at the upstream boundary of GCNP by about 94% and are still eroding today. Sand transport in the post-dam river is limited by episodic resupply from tributaries, and is equally regulated by the discharge of water and short-term changes in the grain size of sand available for transport (Rubin and Topping, WRR, 2001). During tributary floods, sand on the bed of the Colorado River fines; this causes the suspended sand to fine and the suspended-sand concentration to increase even when the discharge of water remains constant. Subsequently, the bed is winnowed of finer sand, the suspended sand coarsens, and the suspended-sand concentration decreases independently of discharge. This prohibits the computation of sand-transport rates in the Colorado River using stable relations between water discharge and sand transport (i.e., sediment rating curves) and requires a more continuous method for measuring sand transport. To monitor suspended sediment at higher (i.e., 15-minute) resolutions, we began testing a laser-acoustic system at four locations along the Colorado River in Grand Canyon in August 2002. Because they are much easier to acquire, the high-resolution suspended-sediment datasets collected using the laser-acoustic systems greatly outnumber (by >5 orders of magnitude) direct grain-size measurements of the upstream bed sediment. Furthermore, suspension processes effectively provide an average "sample" of the bed sediment on the perimeter of the upstream channel and the underwater portions of the banks and

  19. Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

    DEFF Research Database (Denmark)

    Dalal, Dipen Narendrabhai; Christensen, Nicklas; Jørgensen, Asger Bjørn

    2017-01-01

    Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification...

  20. Cleaning up the big muddy: A meta-synthesis of the research on the social impact of dams

    Energy Technology Data Exchange (ETDEWEB)

    Kirchherr, Julian, E-mail: julian.kirchherr@sant.ox.ac.uk; Pohlner, Huw, E-mail: huw.pohlner@oxfordalumni.org; Charles, Katrina J., E-mail: katrina.charles@ouce.ox.ac.uk

    2016-09-15

    Scholars have been exploring the social impacts of dams for over 50 years, but a lack of systematic approaches has resulted in many research gaps remaining. This paper presents the first systematic review of the literature on the social impacts of dams. For this purpose, we built a sample of 217 articles published in the past 25 years via key word searches, expert consultations and bibliography reviews. All articles were assessed against an aggregate matrix framework on the social impact of dams, which combines 27 existing frameworks. We find that existing literature is highly biased with regard to: perspective (45% negative versus 5% positive); dam size (large dams are overrepresented); spatial focus (on the resettlement area); and temporal focus (5–10 years ex-post resettlement). Additionally, there is bias in terms of whose views are included, with those of dam developers rarely examined by scholars. These gaps need to be addressed in future research to advance our knowledge on the social impact of dams to support more transparency in the trade-offs being made in dam development decisions. - Highlights: • Very first systematic review of the research on dams' social impact • Biases in the literature identified, e. g. large dams over-studied, too much focus solely on resettlement area impacts • Implications of these biases for understanding of the topic are discussed.

  1. Cleaning up the big muddy: A meta-synthesis of the research on the social impact of dams

    International Nuclear Information System (INIS)

    Kirchherr, Julian; Pohlner, Huw; Charles, Katrina J.

    2016-01-01

    Scholars have been exploring the social impacts of dams for over 50 years, but a lack of systematic approaches has resulted in many research gaps remaining. This paper presents the first systematic review of the literature on the social impacts of dams. For this purpose, we built a sample of 217 articles published in the past 25 years via key word searches, expert consultations and bibliography reviews. All articles were assessed against an aggregate matrix framework on the social impact of dams, which combines 27 existing frameworks. We find that existing literature is highly biased with regard to: perspective (45% negative versus 5% positive); dam size (large dams are overrepresented); spatial focus (on the resettlement area); and temporal focus (5–10 years ex-post resettlement). Additionally, there is bias in terms of whose views are included, with those of dam developers rarely examined by scholars. These gaps need to be addressed in future research to advance our knowledge on the social impact of dams to support more transparency in the trade-offs being made in dam development decisions. - Highlights: • Very first systematic review of the research on dams' social impact • Biases in the literature identified, e. g. large dams over-studied, too much focus solely on resettlement area impacts • Implications of these biases for understanding of the topic are discussed

  2. Dam safety management in Victoria (Australia)

    International Nuclear Information System (INIS)

    Adem, J.

    1996-01-01

    The Victoria state government's decision to make dam owners accountable for safety and upkeep of their dams was reported. To give effect to this decision a series of guidelines have been developed which outline the required activities and skills to ensure that dams are properly managed within a framework of 'light-handed' regulation. The guidelines are also intended to ensure that dam management becomes an integral part of the business decision making process, not just a set of prescribed technical procedures. Details of the direction being taken and the proposed controls to ensure compliance with national and international standards were described. 4 refs., 2 figs

  3. Numerical modelling for stability of tailings dams

    OpenAIRE

    Auchar, Muhammad; Mattsson, Hans; Knutsson, Sven

    2013-01-01

    A tailings dam is a large embankment structure that is constructed to store the waste from the mining industry. Stability problems may occur in a tailings dam due to factors such as quick rate of raising, internal erosion and liquefaction. The failure of a tailings dam may cause loss of human life and environmental degradation. Tailings Dams must not only be stable during the time the tailings storage facility is in operation, but also long time after the mine is closed. In Sweden, the licens...

  4. Brazil's Amazonian dams: Ecological and socioeconomic impacts

    Science.gov (United States)

    Fearnside, P. M.

    2016-12-01

    Brazil's 2015-2024 Energy Expansion Plan calls for 11 hydroelectric dams with installed capacity ≥ 30 MW in the country's Amazon region. Dozens of other large dams are planned beyond this time horizon, and dams with environmental and socioeconomic impacts. Loss of forest to flooding is one, the Balbina and Tucuruí Dams being examples (each 3000 km2). If the Babaquara/Altamira Dam is built it will flood as much forest as both of these combined. Some planned dams imply loss of forest in protected areas, for example on the Tapajós River. Aquatic and riparian ecosystems are lost, including unique biodiversity. Endemic fish species in rapids on the Xingu and Tapajós Rivers are examples. Fish migrations are blocked, such as the commercially important "giant catfish" of the Madeira River. Dams emit greenhouse gases, including CO2 from the trees killed and CH4 from decay under anoxic conditions at the bottom of reservoirs. Emissions can exceed those from fossil-fuel generation, particularly over the 20-year period during which global emissions must be greatly reduced to meet 1.5-2°C limit agreed in Paris. Carbon credit for dams under the Climate Convention causes further net emission because the dams are not truly "additional." Anoxic environments in stratified reservoirs cause methylation of mercury present in Amazonian soils, which concentrates in fish, posing a health risk to human consumers. Population displacement is a major impact; for example, the Marabá Dam would displace 40,000 people, mostly traditional riverside dwellers (ribeirinhos). Various dams impact indigenous peoples, such as the Xingu River dams (beginning with Belo Monte) and the São Luiz do Tapajós and Chacorão Dams on the Tapajós River. Brazil has many energy options other than dams. Much energy use has little benefit for the country, such as exporting aluminum. Electric showerheads use 5% of the country's power. Losses in transmission lines (20%) are far above global averages and can be

  5. Japan`s largest composition dam, aiming for harmony with nature. Chubetsu dam; Shizen tono chowa wo mezasu, Nippon ichi no fukugo dam. Chubetsu dam

    Energy Technology Data Exchange (ETDEWEB)

    Mizushima, T. [Hokkaido Development Bureau, Hokkaido Development Agency, Sapporo (Japan)

    1994-08-15

    This paper introduces Chubetsu Dam planned with a large-scale embankment having a river bed width of 600 m. Chubetsu Dam is being constructed with such objectives as flood control of Ishikari River, river flow rate maintenance, drinking water supply, irrigation water supply and power generation. The dam site is a gravel bed having a river bed width of 600 m and a maximum foundation rock thickness of 40 m, requiring evaluations as a dam foundation and discussions of water shielding methods. As a result of discussions at the Chubetsu Dam technical discussion committee, the dam type is decided to be a composition dam consisting of a gravity type concrete dam on the left river side and a central core type fill dam using a part of the gravel bed as the foundation on the right river side. A continuous underground wall system is planned to be used for shielding water in the gravel foundation. In discussing the anti-seismic properties, analyses for bank construction and water filling to derive stress and deformation conditions prior to an earthquake and a time-history response analysis to derive conditional changes during the earthquake are performed. According to the results thereof, evaluations are given on the safety by compounding the stress and the acceleration. In plans to improve the surrounding areas, an area will be provided upstream the reservoir where the water level is kept constant to serve as a bird sanctuary. 7 figs.

  6. National Program for Inspection of Non-Federal Dams. Woods Pond (Valley Mill) Dam (MA 00731), Housatonic River Basin, Lee-Lenox, Massachusetts. Phase I Inspection Report.

    Science.gov (United States)

    1979-07-01

    the gates as he feels is required. 1.3 Pertinent Data -.. - All elevation reported herein are approximate and based on the assumption that the top of... assumptions , the outflow due to dam failure was .. calculated to be approximately 9,940 cfs. The flow v-.-_ just prior to failure would be approximately...v w 0 w w w w l -9- .5 -%ml N.- - w - -’V ... vr . 1-. 7 7 CApme a "Wan CjgMT A.,j ..4 h ~ omAij8LJ-1 COMPUTED Pi IMAubgmMOM& Iumlmum PAOJEC DATE

  7. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  8. Assessment and statistics of Brazilian hydroelectric power plants: Dam areas versus installed and firm power

    International Nuclear Information System (INIS)

    Caetano de Souza, Antonio Carlos

    2008-01-01

    The Brazilian relief, predominantly composed by small mountains and plateaus, contributed to formation of rivers with high amount of falls. With exception to North-eastern Brazil, the climate of this country are rainy, which contributes to maintain water flows high. These elements are essential to a high hydroelectric potential, contributing to the choice of hydroelectric power plants as the main technology of electricity generation in Brazil. Though this is a renewable source, whose utilized resource is free, dams must to be established which generates a high environmental and social impact. The objective of this study is to evaluate the impact caused by these dams through the use of environmental indexes. These indexes are ratio formed by installed power with dam area of a hydro power plant, and ratio formed by firm power with this dam area. In this study, the greatest media values were found in South, Southeast, and Northeast regions respectively, and the smallest media values were found in North and Mid-West regions, respectively. The greatest encountered media indexes were also found in dams established in the 1950s. In the last six decades, the smallest indexes were registered by dams established in the 1980s. These indexes could be utilized as important instruments for environmental impact assessments, and could enable a dam to be established that depletes an ecosystem as less as possible. (author)

  9. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  10. Why dentists don't use rubber dam during endodontics and how to promote its usage?

    Science.gov (United States)

    Madarati, Ahmad A

    2016-02-25

    patterns of using rubber dam during undergraduate study were the most influencing factors. Better undergraduate education was the most important proposed measure to increase its usage. The combination of cotton rolls and saliva high-volume ejector or gauze was the most common alternative to rubber dam isolation.

  11. Accuracy Analysis of a Dam Model from Drone Surveys

    Science.gov (United States)

    Buffi, Giulia; Venturi, Sara

    2017-01-01

    This paper investigates the accuracy of models obtained by drone surveys. To this end, this work analyzes how the placement of ground control points (GCPs) used to georeference the dense point cloud of a dam affects the resulting three-dimensional (3D) model. Images of a double arch masonry dam upstream face are acquired from drone survey and used to build the 3D model of the dam for vulnerability analysis purposes. However, there still remained the issue of understanding the real impact of a correct GCPs location choice to properly georeference the images and thus, the model. To this end, a high number of GCPs configurations were investigated, building a series of dense point clouds. The accuracy of these resulting dense clouds was estimated comparing the coordinates of check points extracted from the model and their true coordinates measured via traditional topography. The paper aims at providing information about the optimal choice of GCPs placement not only for dams but also for all surveys of high-rise structures. The knowledge a priori of the effect of the GCPs number and location on the model accuracy can increase survey reliability and accuracy and speed up the survey set-up operations. PMID:28771185

  12. Accuracy Analysis of a Dam Model from Drone Surveys

    Directory of Open Access Journals (Sweden)

    Elena Ridolfi

    2017-08-01

    Full Text Available This paper investigates the accuracy of models obtained by drone surveys. To this end, this work analyzes how the placement of ground control points (GCPs used to georeference the dense point cloud of a dam affects the resulting three-dimensional (3D model. Images of a double arch masonry dam upstream face are acquired from drone survey and used to build the 3D model of the dam for vulnerability analysis purposes. However, there still remained the issue of understanding the real impact of a correct GCPs location choice to properly georeference the images and thus, the model. To this end, a high number of GCPs configurations were investigated, building a series of dense point clouds. The accuracy of these resulting dense clouds was estimated comparing the coordinates of check points extracted from the model and their true coordinates measured via traditional topography. The paper aims at providing information about the optimal choice of GCPs placement not only for dams but also for all surveys of high-rise structures. The knowledge a priori of the effect of the GCPs number and location on the model accuracy can increase survey reliability and accuracy and speed up the survey set-up operations.

  13. Accuracy Analysis of a Dam Model from Drone Surveys.

    Science.gov (United States)

    Ridolfi, Elena; Buffi, Giulia; Venturi, Sara; Manciola, Piergiorgio

    2017-08-03

    This paper investigates the accuracy of models obtained by drone surveys. To this end, this work analyzes how the placement of ground control points (GCPs) used to georeference the dense point cloud of a dam affects the resulting three-dimensional (3D) model. Images of a double arch masonry dam upstream face are acquired from drone survey and used to build the 3D model of the dam for vulnerability analysis purposes. However, there still remained the issue of understanding the real impact of a correct GCPs location choice to properly georeference the images and thus, the model. To this end, a high number of GCPs configurations were investigated, building a series of dense point clouds. The accuracy of these resulting dense clouds was estimated comparing the coordinates of check points extracted from the model and their true coordinates measured via traditional topography. The paper aims at providing information about the optimal choice of GCPs placement not only for dams but also for all surveys of high-rise structures. The knowledge a priori of the effect of the GCPs number and location on the model accuracy can increase survey reliability and accuracy and speed up the survey set-up operations.

  14. Olympic Dam - the first decade

    International Nuclear Information System (INIS)

    Newton, A.W.; Wilson, M.A.; Harris, J.

    1988-01-01

    Most aspects of the pre-production phase of the Olympic Dam Project, from commencement of exploration in May 1975 through to commitment to development in December 1985 are documented here. The discovery by Western Mining Corporation Ltd of copper mineralisation on Roxby Downs Station in July 1975 has led to one of the more intensive base-metal exploration programmes undertaken in Australia. Comprehensive exploration, evaluation and feasibility studies between 1975 and 1985 have delineated a probable 450 million tonnes of higher grade ore containing 2.5% copper, 0.8 kg/t uranium oxide, 0.6 g/t gold and 6.0 g/t silver. The total resource is estimated at 2 billion tonnes containing 1.6% copper, 0.6 kg/t uranium oxide, 0.6 g/t gold and 3.5 g/t silver. At 31 December 1985, over 540 km of surface and underground drilling had been completed, comprising over 700 surface drillholes totalling 234 km of core and 218 km of open-hole drilling, and about 900 underground diamond-drillholes totalling 90 km. The Whenan Shaft had been sunk to 500 m and driving on three levels totalled almost 10 km. More than one million tonnes of ore and mullock were raised during development. A pilot treatment plant commissioned on site produced concentrates, matte and blister copper, and ammonium diuranate. Following a technical study of the Olympic Dam Project, completed in March 1985, and a subsequent economic feasibility study, it was announced on 11 June 1985 that the initial project was considered to be commercially viable. On 8 December 1985, the joint venturers, Western Mining Corporation Holdings Ltd (51%) and the BP Group (49%), announced their commitment to the Project. An appendix lists the important events that occurred between January 1986 and December 1987 in bringing Olympic Dam to the production state. 26 refs., 17 figs., 5 tabs., ills

  15. Gate valve performance prediction

    International Nuclear Information System (INIS)

    Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

    1994-01-01

    The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

  16. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  17. National Dam Safety Program. Grindstone-Lost-Muddy Creek Dam F-20 (MO 11220), Grand - Chariton Basin, Daviess County, Missouri. Phase I Inspection Report.

    Science.gov (United States)

    1980-06-01

    for a small dam having a high hazard potential. Considering the small volume of water im- pounded and the downstream channel from the dam, one-half of...flood at damsite - Mr. Wesley Lee reported that the highest water he had seen was approximately 4 inches over the riser. (3) The principal spillway...operation. It was reported by Mr. Wesley Lee that the emergency spillway has never operated. 2.4 EVALUATION a. Availabilit X . The data in Appendix C

  18. Climate change impact on operation of dams and hydroelectricity generation in the Northeastern United States

    Science.gov (United States)

    Ehsani, N.; Vorosmarty, C. J.; Fekete, B. M.

    2016-12-01

    We are using a large-scale, high-resolution, fully integrated hydrological/reservoir/hydroelectricity model to investigate the impact of climate change on the operation of 11037 dams and generation of electricity from 375 hydroelectric power plants in the Northeastern United States. Moreover, we estimate the hydropower potential of the region by energizing the existing non-powered dams and then studying the impact of climate change on the hydropower potential. We show that climate change increases the impact of dams on the hydrology of the region. Warmer temperatures produce shorter frozen periods, earlier snowmelt and elevated evapotranspiration rates, which when combined with changes in precipitation, are projected to increase water availability in winter but reduce it during summer. As a result, the water that is stored by dams will be more than ever a necessary part of the routine water systems operations to compensate for these seasonal imbalances. The function of dams as emergency water storage for creating drought resiliency will mostly diminish in the future. Building more dams to cope with the local impacts of climate change on water resources and to offset the increased drought vulnerability may thus be inevitable. Annual hydroelectricity generation in the region is 41 Twh. Our estimate of the annual hydropower potential of non-powered dams adds up to 350 Twh. Climate change may reduce hydropower potential from non-powered dams by up to 13% and reduce current hydroelectricity generation by up to 8% annually. Hydroelectricity generation and hydropower potential may increase in winter months and decline in months of summer and fall. These changes call for recalibration of dam operations and may raise conflict of interests in multipurpose dams.

  19. An application of extreme value theory to the management of a hydroelectric dam.

    Science.gov (United States)

    Minkah, Richard

    2016-01-01

    Assessing the probability of very low or high water levels is an important issue in the management of hydroelectric dams. In the case of the Akosombo dam, very low and high water levels result in load shedding of electrical power and flooding in communities downstream respectively. In this paper, we use extreme value theory to estimate the probability and return period of very low water levels that can result in load shedding or a complete shutdown of the dam's operations. In addition, we assess the probability and return period of high water levels near the height of the dam and beyond. This provides a framework for a possible extension of the dam to sustain the generation of electrical power and reduce the frequency of spillage that causes flooding in communities downstream. The results show that an extension of the dam can reduce the probability and prolong the return period of a flood. In addition, we found a negligible probability of a complete shutdown of the dam due to inadequate water level.

  20. Fragility Analysis of Concrete Gravity Dams

    Science.gov (United States)

    Tekie, Paulos B.; Ellingwood, Bruce R.

    2002-09-01

    Concrete gravity dams are an important part ofthe nation's infrastructure. Many dams have been in service for over 50