Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

Science.gov (United States)

Kurt, Huseyin

2005-08-01

most technical applications of CIMS require low switching currents, some, like read-heads, require high switching currents. We show that use of a synthetic antiferromagnet can increase the switching current. Manschot et al. recently predicted that the positive critical current for switching from P to AP could be reduced by up to a factor of five by using asymmetric current leads. In magnetically uncoupled samples, we find that highly asymmetric current leads do not significantly reduce the switching current. A CIMS equation given by Katine et al. predicts that lowering the demagnetization field should reduce the switching current. To test this prediction, we compare switching currents for Co/Au/Co(t)/Au nanopillars with t = 1 to 4 nm (where the easy axis should be normal to the layer planes at least for t = 1 and 2 nm) with those for Co/Cu/Co(t)/Au nanopillars (where the easy axis should be in the layer planes). We do not find significant differences in switching currents for the two systems.

Switching phenomena in high-voltage circuit breakers

International Nuclear Information System (INIS)

Nakanishi, K.

1991-01-01

The topics covered in this book include: general problems concerning current interruption, the physical arc model, and miscellaneous types of modern switching apparatus, such as gas circuit breakers, gas-insulated switch-gear, vacuum circuit breakers and high-voltage direct-current circuit breakers

A high-current rail-type gas switch with preionization by an additional corona discharge

Energy Technology Data Exchange (ETDEWEB)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

2016-12-15

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

A high-current rail-type gas switch with preionization by an additional corona discharge

International Nuclear Information System (INIS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-01-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

High voltage superconducting switch for power application

International Nuclear Information System (INIS)

Mawardi, O.; Ferendeci, A.; Gattozzi, A.

1983-01-01

This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

Fast and efficient STT switching in MTJ using additional transient pulse current

Science.gov (United States)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Functional model of a high-current high-voltage superconducting switches

International Nuclear Information System (INIS)

Menke, Kh.; Shishov, Yu.A.

1977-01-01

Considered are problems of superconducting switches (SS) for energy extraction from magnets at a current of several kiloamperes and a voltage of several kilovolts with a time for transition to the normal state of <0.5 ms. SS is made of a wire of 0.5 mm diameter containing 19 strands of Nb-Ti alloy of 65 μm diameter. The wire matrix was etched out, 19 wires of 4.5 m length were braided together. On each of three groups of wires a heater wire of constantan of 0.12 mm diameter and 6 m length was wound. A second heater intended for slow heating during current feeding into the magnet, is wound over the braid. The wires and heaters are parallel connected and impregnated by an epoxy compound. The following main parameters were obtained in SS testing: critical current of 920 A, resistance in the normal state of 2.5 Ohm, and minimum delay time of 0.2 ms at a nominal current of 0.8 of the critical one

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

Science.gov (United States)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

2016-12-13

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

Verification of the short-circuit current making capability of high-voltage switching devices

NARCIS (Netherlands)

Smeets, R.P.P.; Linden, van der W.A.

2001-01-01

Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

The Implementation Of Solid State Switches In A Parallel Configuration To Gain Output Current Capacity In A High Current Capacitive Discharge Unit (CDU).

Energy Technology Data Exchange (ETDEWEB)

Chaves, Mario Paul [Univ. of New Mexico, Albuquerque, NM (United States)

2017-07-01

For my project I have selected to research and design a high current pulse system, which will be externally triggered from a 5V pulse. The research will be conducted in the region of paralleling the solid state switches for a higher current output, as well as to see if there will be any other advantages in doing so. The end use of the paralleled solid state switches will be used on a Capacitive Discharge Unit (CDU). For the first part of my project, I have set my focus on the design of the circuit, selection of components, and simulation of the circuit.

Nonlinear Deadbeat Current Control of a Switched Reluctance Motor

OpenAIRE

Rudolph, Benjamin

2009-01-01

High performance current control is critical to the success of the switched reluctance motor (SRM). Yet high motor phase nonlinearities in the SRM place extra burden on the current controller, rendering it the weakest link in SRM control. In contrast to linear motor control techniques that respond to current error, the deadbeat controller calculates the control voltage by the current command, phase current, rotor position and applied phase voltage. The deadbeat controller has demonstrated sup...

Emerging memories: resistive switching mechanisms and current status

International Nuclear Information System (INIS)

Jeong, Doo Seok; Thomas, Reji; Katiyar, R S; Scott, J F; Kohlstedt, H; Petraru, A; Hwang, Cheol Seong

2012-01-01

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO 2 , Cr 2 O 3 , FeO x and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO 3 , Pb(Zr x Ti 1−x )O 3 , BiFeO 3 and Pr x Ca 1−x MnO 3 ; (iii) large band gap high-k dielectrics, e.g. Al 2 O 3 and Gd 2 O 3 ; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In 2 Se 3 and In 2 Te 3 . Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors. (review article)

Emerging memories: resistive switching mechanisms and current status

Science.gov (United States)

Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

2012-07-01

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Current distribution in a plasma erosion opening switch

International Nuclear Information System (INIS)

Weber, B.V.; Commisso, R.J.; Meger, R.A.; Neri, J.M.; Oliphant, W.F.; Ottinger, P.F.

1984-01-01

The current distribution in a plasma erosion opening switch is determined from magnetic field probe data. During the closed state of the switch the current channel broadens rapidly. The width of the current channel is consistent with a bipolar current density limit imposed by the ion flux to the cathode. The effective resistivity of the current channel is anomalously large. Current is diverted to the load when a gap opens near the cathode side of the switch. The observed gap opening can be explained by erosion of the plasma. Magnetic pressure is insufficient to open the gap

Current distribution in a plasma erosion opening switch

International Nuclear Information System (INIS)

Weber, B.V.; Commisso, R.J.; Meger, R.A.; Neri, J.M.; Oliphant, W.F.; Ottinger, P.F.

1985-01-01

The current distribution in a plasma erosion opening switch is determined from magnetic field probe data. During the closed state of the switch the current channel broadens rapidly. The width of the current channel is consistent with a bipolar current density limit imposed by the ion flux to the cathode. The effective resistivity of the current channel is anomalously large. Current is diverted to the load when a gap opens near the cathode side of the switch. The observed gap opening can be explained by erosion of the plasma. Magnetic pressure is insufficient to open the gap

High current, high bandwidth laser diode current driver

Science.gov (United States)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

Stabilization of a Nb3Sn persistent current switch

International Nuclear Information System (INIS)

Urata, M.; Maeda, H.; Nakayama, S.; Yoneda, E.; Oda, Y.; Kumano, T.; Aoki, N.; Tomisaki, T.; Kabashima, S.

1993-01-01

A 2000 A class Nb 3 Sn persistent current switch has been successfully fabricated in the Toshiba R and D Center. The Nb tube processed conductor with Cu-10 wt.% Ni matrix has been developed for the switch in the Showa Electric Wire and Cable Co. Ltd. The magnetic instability which was observed in the previous 35 Ω Nb 3 Sn persistent current switch was improved in the present switch. The problem of quench current degradation and flux jump on magnetization, emerged in the previous switch, were confirmed to be solved. In the fast ramp, however, the switch degrades from the calculated results assuming the self field ac loss. In the Nb 3 Sn reaction process, Sn in the bronze diffuses into the Nb tube, which decreases the switch resistance. It was observed by a computer aided micro analysis (CMA) that Ni in the CuNi matrix precipitated on the Nb tube, which slightly reduced the switch resistance. (orig.)

Ultra-Low Voltage Class AB Switched Current Memory Cell

DEFF Research Database (Denmark)

Igor, Mucha

1996-01-01

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

Pseudospark switches

International Nuclear Information System (INIS)

Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

1987-01-01

The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

Science.gov (United States)

Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

2013-02-11

We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

Low Voltage Current Mode Switched-Current-Mirror Mixer

Directory of Open Access Journals (Sweden)

Chunhua Wang

2009-09-01

Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

High current and high power superconducting rectifiers

International Nuclear Information System (INIS)

Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

1981-01-01

Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

Subnanosecond, high voltage photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

1990-01-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

Subnanosecond, high-voltage photoconductive switching in GaAs

Science.gov (United States)

Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

1991-03-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

Low-profile high-voltage compact gas switch

International Nuclear Information System (INIS)

Goerz, D.A.; Wilson, M.J.; Speer, R.D.

1997-01-01

This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

Directory of Open Access Journals (Sweden)

H. B. Huang

2016-01-01

Full Text Available We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.

A graphite based STT-RAM cell with reduction in switching current

International Nuclear Information System (INIS)

Varghani, Ali; Peiravi, Ali

2015-01-01

Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for “universal memory” because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 µA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF). - Highlights: • A new STT-RAM cell structure which uses perfect graphite based MTJ is proposed. • The amplitude of the switching current or its pulsewidth can be reduced without any sacrifice of data retention time. • The proposed design is down-scalable from 90 nm to 22 nm. • Micromagnetic simulations are done with OOMMF

Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

DEFF Research Database (Denmark)

Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

2015-01-01

This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated...

A Digital Hysteresis Current Control for Half-Bridge Inverters with Constrained Switching Frequency

Directory of Open Access Journals (Sweden)

Triet Nguyen-Van

2017-10-01

Full Text Available This paper proposes a new robustly adaptive hysteresis current digital control algorithm for half-bridge inverters, which plays an important role in electric power, and in various applications in electronic systems. The proposed control algorithm is assumed to be implemented on a high-speed Field Programmable Gate Array (FPGA circuit, using measured data with high sampling frequency. The hysteresis current band is computed in each switching modulation period based on both the current error and the negative half switching period during the previous modulation period, in addition to the conventionally used voltages measured at computation instants. The proposed control algorithm is derived by solving the optimization problem—where the switching frequency is always constrained at below the desired constant frequency—which is not guaranteed by the conventional method. The optimization problem also keeps the output current stable around the reference, and minimizes power loss. Simulation results show good performances of the proposed algorithm compared with the conventional one.

Streamer model for high voltage water switches

International Nuclear Information System (INIS)

Sazama, F.J.; Kenyon, V.L. III

1979-01-01

An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

DEFF Research Database (Denmark)

Mucha, Igor

1999-01-01

current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

Study of electron and ion fluxes in a microsecond plasma switch during current switch phase at power level of 0,2TW

International Nuclear Information System (INIS)

Anan'in, P.S.; Bystritskij, V.M.; Karpov, V.B.; Krasik, Ya.E.; Lisitsin, I.V.; Sinebryukhov, A.A.

1991-01-01

Results of experimental study of dynamics of electron and ion losses in a microsecond plasma switch (PS), carring the short-circuited inductance load and operating with open potential electrode, are presented. Investigations were carried out at 'DUBL' microsecond generator with stored energy of 56 kJ and 300 kA current amplitude in inductive storage. The investigations showed that primary channel of energy losses, limiting microsecond plasma switch impedance, are energy losses: they constitute 70% of all losses under inductive load and 30% during operation with an open cathode. It was shown that ion current in PS attains its peak value by the end of conductivity phase and it does not increase in switch phase. With an open cathode, PS impedance is defined by an electron beam, forming during current switch phase and propagating towards external electrode end. In this high-current electron beam H + ions, accelerated up to 3.5-4.2 MeV energy, and outcoming from PS plasma boundary, were detected

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

Science.gov (United States)

Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

2018-03-01

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

A graphite based STT-RAM cell with reduction in switching current

Science.gov (United States)

Varghani, Ali; Peiravi, Ali

2015-10-01

Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for "universal memory" because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 μA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF).

A Novel Application of Zero-Current-Switching Quasiresonant Buck Converter for Battery Chargers

Directory of Open Access Journals (Sweden)

Kuo-Kuang Chen

2011-01-01

Full Text Available The main purpose of this paper is to develop a novel application of a resonant switch converter for battery chargers. A zero-current-switching (ZCS converter with a quasiresonant converter (QRC was used as the main structure. The proposed ZCS dc–dc battery charger has a straightforward structure, low cost, easy control, and high efficiency. The operating principles and design procedure of the proposed charger are thoroughly analyzed. The optimal values of the resonant components are computed by applying the characteristic curve and electric functions derived from the circuit configuration. Experiments were conducted using lead-acid batteries. The optimal parameters of the resonance components were determined using the load characteristic curve diagrams. These values enable the battery charger to turn on and off at zero current, resulting in a reduction of switching losses. The results of the experiments show that when compared with the traditional pulse-width-modulation (PWM converter for a battery charger, the buck converter with a zero- current-switching quasiresonant converter can lower the temperature of the activepower switch.

A Switched-Capacitor Based High Conversion Ratio Converter for Renewable Energy Applications

DEFF Research Database (Denmark)

Li, Kerui; Yin, Zhijian; Yang, Yongheng

2017-01-01

A high step-up switched-capacitor based converter is proposed in this paper. The proposed converter features high conversion ratio, low voltage stress and continuous input current, which makes it very suitable for renewable energy applications like photovoltaic systems. More importantly...... voltage gain, low voltage stress on the switches, continuous input current, and relatively high efficiency....

Iaverage current mode (ACM) control for switching power converters

OpenAIRE

2014-01-01

Providing a fast current sensor direct feedback path to a modulator for controlling switching of a switched power converter in addition to an integrating feedback path which monitors average current for control of a modulator provides fast dynamic response consistent with system stability and average current mode control. Feedback of output voltage for voltage regulation can be combined with current information in the integrating feedback path to limit bandwidth of the voltage feedback signal.

High voltage disconnect switch position monitoring

Energy Technology Data Exchange (ETDEWEB)

Crampton, S W

1983-08-01

Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

DEFF Research Database (Denmark)

Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.

2015-01-01

In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case...... of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the proposed topology and its control strategy. Results indicate that the leakage current suppression can...

Advances in high voltage power switching with GTOs

International Nuclear Information System (INIS)

Podlesak, T.F.

1990-01-01

The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

Dynamic behavior of HTSC opening switch models controlled by short over-critical current pulses

International Nuclear Information System (INIS)

Agafonov, A.V.; Krastelev, E.G.; Voronin, V.S.

1999-01-01

We present results of experimental research of dynamical properties of thin films of YBa 2 Cu 3 O 7 HTSC-switch models under action of short overcritical current pulses to test this method of control of fast high-power opening switches for accelerator applications

Micromagnetic analysis of geometrically controlled current-driven magnetization switching

Directory of Open Access Journals (Sweden)

O. Alejos

2017-05-01

Full Text Available The magnetization dynamics induced by current pulses in a pair of two “S-shaped” ferromagnetic elements, each one consisting on two oppositely tilted tapered spikes at the ends of a straight section, is theoretically studied by means of micromagnetic simulations. Our results indicate that the magnetization reversal is triggered by thermal activation, which assists the current-induced domain nucleation and the propagation of domain walls. The detailed analysis of the magnetization dynamics reveals that the magnetization switching is only achieved when a single domain wall is nucleated in the correct corner of the element. In agreement with recent experimental studies, the switching is purely dictated by the shape, being independent of the current polarity. The statistical study points out that successful switching is only achieved within a narrow range of the current pulse amplitudes.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

CERN Document Server

Kaltenbacher, T; Doser, M; Kellerbauer, A; Pribyl, W

2013-01-01

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2K and in a high magnetic field of at least 0.5T. This piezoelectric switch shows very low insertion loss of less than -0.1dB within a bandwidth of 100MHz when operated at 4.2K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Kaltenbacher, Thomas, E-mail: thomas.kaltenbacher@cern.ch [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria); Caspers, Fritz; Doser, Michael [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Kellerbauer, Alban [Max Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany); Pribyl, Wolfgang [Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria)

2013-11-21

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than −0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

A Switched Capacitor Based AC/DC Resonant Converter for High Frequency AC Power Generation

Directory of Open Access Journals (Sweden)

Cuidong Xu

2015-09-01

Full Text Available A switched capacitor based AC-DC resonant power converter is proposed for high frequency power generation output conversion. This converter is suitable for small scale, high frequency wind power generation. It has a high conversion ratio to provide a step down from high voltage to low voltage for easy use. The voltage conversion ratio of conventional switched capacitor power converters is fixed to n, 1/n or −1/n (n is the switched capacitor cell. In this paper, A circuit which can provide n, 1/n and 2n/m of the voltage conversion ratio is presented (n is stepping up the switched capacitor cell, m is stepping down the switching capacitor cell. The conversion ratio can be changed greatly by using only two switches. A resonant tank is used to assist in zero current switching, and hence the current spike, which usually exists in a classical switching switched capacitor converter, can be eliminated. Both easy operation and efficiency are possible. Principles of operation, computer simulations and experimental results of the proposed circuit are presented. General analysis and design methods are given. The experimental result verifies the theoretical analysis of high frequency AC power generation.

Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

OpenAIRE

Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.; Savaghebi, Mehdi

2015-01-01

In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the propos...

Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

DEFF Research Database (Denmark)

Wang, Weiqi; Gao, Feng; Yang, Yongheng

2018-01-01

This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

Modelling switching-time effects in high-frequency power conditioning networks

Science.gov (United States)

Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

1979-01-01

Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

GaN transistors on Si for switching and high-frequency applications

Science.gov (United States)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

CMOS switched current phase-locked loop

NARCIS (Netherlands)

Leenaerts, D.M.W.; Persoon, G.G.; Putter, B.M.

1997-01-01

The authors present an integrated circuit realisation of a switched current phase-locked loop (PLL) in standard 2.4 µm CMOS technology. The centre frequency is tunable to 1 MHz at a clock frequency of 5.46 MHz. The PLL has a measured maximum phase error of 21 degrees. The chip consumes

Very high plasma switches. Basic plasma physics and switch technology

International Nuclear Information System (INIS)

Doucet, H.J.; Roche, M.; Buzzi, J.M.

1988-01-01

A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters

High-frequency, three-phase current controller implementation in an FPGA

Energy Technology Data Exchange (ETDEWEB)

Hartmann, M.; Round, S. D.; Kolar, J. W.

2008-07-01

Three phase rectifiers with switching frequencies of 500 kHz or more require high speed current controllers. At such high switching frequencies analog controllers as well as high speed digital signal processing (DSP) systems have limited performance. In this paper, two high speed current controller implementations using two different field-programmable gate arrays (FPGA) - one for switching frequencies up to 1 MHz and one for switching frequencies beyond 1 MHz - are presented to overcome this performance limitation. Starting with the digital system design all the blocks of the signal chain, containing analog-to-digital (A/D) interface, digital controller implementation using HW-multipliers and implementation of a novel high speed, high resolution pulse width modulation (PWM) are discussed and compared. Final measurements verify the performance of the controllers. (author)

A Novel Application of Zero-Current-Switching Quasiresonant Buck Converter for Battery Chargers

OpenAIRE

Kuo-Kuang Chen

2011-01-01

The main purpose of this paper is to develop a novel application of a resonant switch converter for battery chargers. A zero-current-switching (ZCS) converter with a quasiresonant converter (QRC) was used as the main structure. The proposed ZCS dc–dc battery charger has a straightforward structure, low cost, easy control, and high efficiency. The operating principles and design procedure of the proposed charger are thoroughly analyzed. The optimal values of the resonant components are compute...

Method and system for a gas tube-based current source high voltage direct current transmission system

Science.gov (United States)

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

International Nuclear Information System (INIS)

Aurelio, D.; Torres, L.; Finocchio, G.

2009-01-01

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

Current switching ratio optimization using dual pocket doping engineering

Science.gov (United States)

Dash, Sidhartha; Sahoo, Girija Shankar; Mishra, Guru Prasad

2018-01-01

This paper presents a smart idea to maximize current switching ratio of cylindrical gate tunnel FET (CGT) by growing pocket layers in both source and channel region. The pocket layers positioned in the source and channel of the device provides significant improvement in ON-state and OFF-state current respectively. The dual pocket doped cylindrical gate TFET (DP-CGT) exhibits much superior performance in term of drain current, transconductance and current ratio as compared to conventional CGT, channel pocket doped CGT (CP-CGT) and source pocket doped CGT (SP-CGT). Further, the current ratio has been optimized w.r.t. width and instantaneous position both the pocket layers. The much improved current ratio and low power consumption makes the proposed device suitable for low-power and high speed application. The simulation work of DP-CGT is done using 3D Sentaurus TCAD device simulator from Synopsys.

Current-Driven Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

2012-01-01

The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

Gas tube-switched high voltage DC power converter

Science.gov (United States)

She, Xu; Bray, James William; Sommerer, Timothy John; Chokhawala, Rahul

2018-05-15

A direct current (DC)-DC converter includes a transformer and a gas tube-switched inverter circuit. The transformer includes a primary winding and a secondary winding. The gas tube-switched inverter circuit includes first and second inverter load terminals and first and second inverter input terminals. The first and second inverter load terminals are coupled to the primary winding. The first and second inverter input terminals are couplable to a DC node. The gas tube-switched inverter circuit further includes a plurality of gas tube switches respectively coupled between the first and second inverter load terminals and the first and second inverter input terminals. The plurality of gas tube switches is configured to operate to generate an alternating current (AC) voltage at the primary winding.

Very High Frequency Switch-Mode Power Supplies

DEFF Research Database (Denmark)

Madsen, Mickey Pierre

The importance of technology and electronics in our daily life is constantly increasing. At the same time portability and energy efficiency are currently some of the hottest topics. This creates a huge need for power converters in a compact form factor and with high efficiency, which can supply...... these electronic devices. This calls for new technologies in order to miniaturize the power electronics of today. One way to do this is by increasing the switching frequency dramatically and develop very high frequency switch mode power supplies. If these converters can be designed to operate efficiently, a huge...... size, weight and cost reduction can be achieved due to the smaller energy storing elements needed at these frequencies. The research presented in this thesis focuses on exactly this. First various technologies for miniaturization of power supplies are studied, e.g. piezo electric transformers, wide...

Power quality improvement in highly varying loads using thyristor-switched capacitor

Energy Technology Data Exchange (ETDEWEB)

Poshtan, M. [Petroleum Inst., Abu Dhabi (United Arab Emirates). Dept. of Electrical Engineering; Mokhtari, H.; Esmaeili, A. [Sharif Univ. of Technology, Tehran (Iran, Islamic Republic of). Dept. of Electrical Engineering

2007-07-01

Ordinary contactor-based-capacitor (CBC) banks may not be able to response quickly enough in highly varying electrical loads such as welding machines or arc furnace loads. Thyristor-switched capacitor (TSC) banks are therefore used to compensate for reactive power of highly varying loads. In this paper, the performance of a TSC was compared to CBC banks. The 2 systems, were also compared in terms of energy saving in transmission systems. Simulations carried out using PSCAD/EMTDC software showed that there was a considerable difference in the performance of the 2 systems. The shortcomings of existing CBC systems include slow response of mechanical switching systems; problem of switching more than one bank into the system; and, voltage/current transients during on-off switching. 3 refs., 6 tabs., 14 figs.

Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

Directory of Open Access Journals (Sweden)

Martin Janecek

2012-12-01

Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

Digital control of high-frequency switched-mode power converters

CERN Document Server

Corradini, Luca; Mattavelli, Paolo; Zane, Regan

This book is focused on the fundamental aspects of analysis, modeling and design of digital control loops around high-frequency switched-mode power converters in a systematic and rigorous manner Comprehensive treatment of digital control theory for power converters Verilog and VHDL sample codes are provided Enables readers to successfully analyze, model, design, and implement voltage, current, or multi-loop digital feedback loops around switched-mode power converters Practical examples are used throughout the book to illustrate applications of the techniques developed Matlab examples are also

High explosive driven plasma opening switches

International Nuclear Information System (INIS)

Greene, A.E.; Bowers, R.L.; Brownell, J.H.; Goforth, J.H.; Oliphant, T.A.; Weiss, D.L.

1983-01-01

A joint theoretical and experimental effort is underway to understand and improve upon the performance of high explosive driven plasma opening switches such as those first described by Pavlovskii et al. We have modeled these switches in both planar and cylindrical geometry using a one dimensional Lagrangian MHD code. This one-dimensional analysis is now essentially complete. It has shown that simple, one-dimensional, compression of the current-carrying channel can explain the observed resistance increases during the time of flight of the HE detonation products. Our calculations imply that ionization plays an important role as an energy sink and the performance of these switches might be improved by a judicious choice of gases. We also predict improved performance by lowering the pressure in the plasma channel. The bulk of our experimental effort to date has been with planar switches. We have worked with current densities of 0.25 to 0.4 MA/cm and have observed resistance increases of 40 to 60 mΩ. Significant resistance increases are observed later than the time of flight of the HE detonation products. We suggest that these resistance increases are due to mixing between the hot plasma and the relatively cooler detonation products. Such mixing is not included in the 1-D, Lagrangian code. We are presently beginning a computational effort with a 2-D Eulerian code. The status of this effort is discussed. Experimentally we have designed an apparatus that will permit us to test the role of different gases and pressures. This system is also in a planar geometry, but the plasma channel is doughnut shaped, permitting us to avoid edge effects associated with the planar rectangular geometry. The first experiments with this design are quite encouraging and the status of this effort is also discussed

Investigation of electrically exploded large area foil for current switching

International Nuclear Information System (INIS)

Chernyshev, V.K.; Boyko, A.M.; Kostyukov, V.N.; Kuzyaev, A.I.; Kulagin, A.A.; Mamyshev, V.I.; Mezhevov, A.B.; Nechaev, A.I.; Petrukhin, A.A.; Protasov, M.S.; Shevtsov, V.I.; Yakubov, V.B.

1990-01-01

The possibility of microsecond ∼40 MA current switching from EMG into a quasiconstant inductive load by an electrically exploded foil is investigated. The copper foil of large area, S ∼ 10 4 cm 2 , was placed between thin-walled insulators into a coaxial transmission line (TL). This paper shows a conceptual device scheme. To feed a foil opening switch (FOS), a disc explosive magnetic generator (DEMG) with 20 μs current rise time was employed. An inductive coaxial load was connected to a FOS at a moment, that was close to the foil vaporization start by means of an axisymmetric explosive current commutator (ECC)

Current-induced switching of magnetic molecules on topological insulator surfaces

Science.gov (United States)

Locane, Elina; Brouwer, Piet W.

2017-03-01

Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion

International Nuclear Information System (INIS)

Murray, C.S.; El-Genk, M.S.

1994-02-01

A low voltage/high current switch refer-red as ''Cs-Ba tacitron'' is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM 2 , switch power density of 1 kW/cm 2 , and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V

Modeling of plasma flow switches at low, intermediate and high energies

International Nuclear Information System (INIS)

Bowers, R.L.; Brownell, J.H.; Greene, A.E.; Peterson, D.L.; Roderick, N.; Turchi, P.

1992-01-01

Inductively stored pulsed power technology has been used over the past thirty years to produce multi-megaamp currents to implode low inductance loads and produce x-radiation. Because of the large difference in timescales for the delivery of magnetic energy to the load and the desire for high power x-radiation output (short timescale for the implosion), most inductively stored systems require at least one opening switch. The design and understanding of fast, efficient opening switches for multi-megaamp systems represents a long standing problem in pulsed power research. The Los Alamos Foil Implosion Project uses inductively stored magnetic energy to implode thin metallic liners. A plasma flow switch (PFS) has been investigated as the final pulse shaping step for this systems. The PFS consists of a wire array and a barrier foil located upstream from the load region. Several stages can be identified in the performance of the plasma flow switch. These are: (1) the vaporization of the wire array; (2) the assembly of the initiated plasma on tie barrier foil to form the switch plasma; (3) the motion of the switch plasma down the coaxial barrel; and (4) current switching to the load (the actual switching stage). The fourth stage affects the switch's efficiency, as well as the quality of the load implosion. Instabilities may develop during any of these four stages, and their presence may seriously degrade the structure of the switch plasma. Two primary criteria may be used to characterize good switching. The first is switching efficiency. A second criterion is transferred to the load during or after switching. This paper summarizes the computational design of the PFS experiments carried out on Pegasus 1. We conclude by considering the implications of these results for the design of a PFS for the higher energy regime (Procyon) regime

Soft controller switching technique to minimize the torque and current pulsations of a SCIM during its reswitching

International Nuclear Information System (INIS)

Larik, A.S.

2010-01-01

The direct-on-line starting of induction motor draws heavy current and to limit this Inrush current to a safe level normally a star-delta switch is used. However, the switching over from star to delta causes over current transients and this leads to torque pulsations. Therefore, in this paper the current and torque pulsations developed during the switching process are focused and a soft-switched controller is devised to minimize the re-closure transient currents and torque pulsations during star-delta switching of induction motor. The designed system can readily handles the sensing of favorable conditions of re closure of a switched-off running induction motor and it minimizes the inrush current and hence the pulsations of torque of all types of induction motors, whether, single-phase or three phase. An investigation is made into the transient currents and pulsation torques generated due to opening the circuit of a running induction motor and the switching pattern of star-delta switching. The re-switching control scheme for the induction motor is practically tested in the laboratory with and without soft controller. (author)

High-current railgap studies

Science.gov (United States)

Druce, R.; Gordon, L.; Hofer, W.; Wilson, M.

1983-06-01

Characteristics of a 40-kV, 750-kA, multichannel rail gap are presented. The gap is a three electrode, field distortion triggered design, with a total switch inductance of less than 10 nH. At maximum ratings, the gap typically switches 10 C per shot, at 700 kA, with a jitter of less than 2 ns. Channel evolution and current division were studied on image converter streak photographs. Transient gas pressure measurements were made to investigate the arc generated shocks and to detect single channel failure. Channel current sharing and simultaneity are described and their effects on the switch inductance in the channel current sharing and erosion measurements are discussed.

Phase shift PWM with double two-switch bridge for high power capacitor charging

International Nuclear Information System (INIS)

Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

2013-01-01

Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

International Nuclear Information System (INIS)

Aravinthan, D.; Daniel, M.; Sabareesan, P.

2015-01-01

The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device from 67 ps to 48 ps for an applied current density of 4 × 10 12 Am −2 . Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10 12 Am −2 to 1.39 × 10 12 Am −2

High-current railgap studies

Energy Technology Data Exchange (ETDEWEB)

Druce, R.; Gordon, L.; Hofer, W.; Wilson, M.

1983-06-03

Characteristics of a 40-kV, 750-kA, multichannel rail gap are presented. The gap is a three electrode, field-distortion-triggered design, with a total switch inductance of less than 10 nH. At maximum ratings, the gap typically switches 10 C per shot, at 700 kA, with a jitter of less than 2 ns. Image-converter streak photographs were used to study channel evolution and current division. Transient gas-pressure measurements were made to investigate the arc generated shocks and to detect single channel failure. Channel current sharing and simultaneity are described and their effects on the switch inductance and lifetime are discussed. Lifetime tests of the rail gap were performed. Degradation in the channel current-sharing and erosion measurements are discussed.

Hybrid switch for resonant power converters

Science.gov (United States)

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Adaptation of superconducting fault current limiter to high-speed reclosing

International Nuclear Information System (INIS)

Koyama, T.; Yanabu, S.

2009-01-01

Using a high temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor might break in some cases because of its excessive generation of heat. Therefore, it is desirable to interrupt early the current that flows to superconductor. So, we proposed the SFCL using an electromagnetic repulsion switch which is composed of a superconductor, a vacuum interrupter and a by-pass coil, and its structure is simple. Duration that the current flow in the superconductor can be easily minimized to the level of less than 0.5 cycle using this equipment. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. There is duty of high-speed reclosing after interrupting fault current in the electric power system. After the fault current is interrupted, the back-up breaker is re-closed within 350 ms. So, the electromagnetic repulsion switch should return to former state and the superconductor should be recovered to superconducting state before high-speed reclosing. Then, we proposed the SFCL using an electromagnetic repulsion switch which employs our new reclosing function. We also studied recovery time of the superconductor, because superconductor should be recovered to superconducting state within 350 ms. In this paper, the recovery time characteristics of the superconducting wire were investigated. Also, we combined the superconductor with the electromagnetic repulsion switch, and we did performance test. As a result, a high-speed reclosing within 350 ms was proven to be possible.

Digital switched hydraulics

Science.gov (United States)

Pan, Min; Plummer, Andrew

2018-06-01

This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

Energy Technology Data Exchange (ETDEWEB)

Aravinthan, D.; Daniel, M. [Centre for Nonlinear Dynamics, School of Physics, Bharathidasan University, Tiruchirappalli - 620 024 (India); Sabareesan, P. [Centre for Nonlinear Science and Engineering, School of Electrical and Electronics Engineering, SASTRA University, Thanjavur - 613 401 (India)

2015-07-15

The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device from 67 ps to 48 ps for an applied current density of 4 × 10{sup 12}Am{sup −2}. Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10{sup 12}Am{sup −2} to 1.39 × 10{sup 12}Am{sup −2}.

Noise Analysis of Switched-Current Circuits

DEFF Research Database (Denmark)

Jørgensen, Ivan Harald Holger; Bogason, Gudmundur

1998-01-01

The understanding of noise in analog sampled data systems is vital for the design of high resolution circuitry. In this paper a general description of sampled and held noise is presented. The noise calculations are verified by measurements on an analog delay line implemented using switched...

Current-induced switching in a magnetic insulator

Science.gov (United States)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Transient voltage sharing in series-coupled high voltage switches

Directory of Open Access Journals (Sweden)

Editorial Office

1992-07-01

Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

High-efficiency thermal switch based on topological Josephson junctions

Science.gov (United States)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

OpenAIRE

You, Chun-Yeol

2012-01-01

We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

Science.gov (United States)

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

CERN Document Server

Bertolucci, Ennio; Mettivier, G; Russo, P; Bisogni, M G; Bottigli, U; Fantacci, M E; Stefanini, A; Cola, A; Quaranta, F; Vasanelli, L; Stefanini, G

1999-01-01

Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6*10/sup 15/ p/cm/sup 2/) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1*10/sup 14/ p/cm/sup 2/) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of ...

Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

Science.gov (United States)

Tian, Liqiang; Shi, Wei; Feng, Qingqing

2011-11-01

A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

A high-switching-frequency flyback converter in resonant mode

NARCIS (Netherlands)

Li, Jianting; van Horck, Frank B.M.; Daniel, Bobby J.; Bergveld, Henk Jan

2017-01-01

The demand of miniaturization of power systems has accelerated the research on high-switching-frequency power converters. A flyback converter in resonant mode that features low switching losses, less transformer losses, and low switching noise at high switching frequency is investigated in this

Current-induced magnetic switching of a single molecule magnet on a spin valve

International Nuclear Information System (INIS)

Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang

2015-01-01

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs

Current-induced magnetic switching of a single molecule magnet on a spin valve

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)

2015-04-17

The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.

Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

KAUST Repository

Ohto, Tatsuhiko

2013-05-28

Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green\\'s function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

KAUST Repository

Ohto, Tatsuhiko; Rungger, Ivan; Yamashita, Koichi; Nakamura, Hisao; Sanvito, Stefano

2013-01-01

Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green's function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

High current transistor pulse generator

International Nuclear Information System (INIS)

Nesterov, V.; Cassel, R.

1991-05-01

A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs

DEFF Research Database (Denmark)

Beczkowski, Szymon; Jørgensen, Asger Bjørn; Li, Helong

2017-01-01

Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries....... Especially important are the couplings between gate and power loops of individual transistors. Fast changing source currents cause gate voltage imbalances yielding uneven switching currents. Equalizing gate voltages seen by paralleled transistors, done by adjusting source bond wires, is proposed...... in this paper. Analysis is performed on an industry standard DBC layout using numerically extracted module parasitics. The method of tuning individual source inductances shows clear improvement in dynamic current balancing and prevents excessive current overshoot during transistors turn-on....

Quasi-Resonant Full-Wave Zero-Current Switching Buck Converter Design, Simulation and Application

OpenAIRE

Yanik, G.; Isen, E.

2015-01-01

—This paper presents a full wave quasi-resonant zerocurrent switching buck converter design, simulation and application. The converter control uses with zero-current switching (ZCS) technique to decrease the switching losses. Comparing to conventional buck converter, resonant buck converter includes a resonant tank equipped with resonant inductor and capacitor. The converter is analyzed in mathematical for each subintervals. Depending on the desired input and output electrical quantities, con...

Design and testing of a surface switch for the dynamic load current multiplier on the SPHINX microsecond LTD

International Nuclear Information System (INIS)

Maysonnave, T.; Bayol, F.; Demol, G.; Almeida, T. d'; Morell, A.; Lassalle, F.; Grunenwald, J.; Chuvatin, A.S.; Pecastaing, L.; De Ferron, A.S.

2013-01-01

SPHINX is a microsecond linear transformer driver located at Atomic Energy Commission (CEA) Gramat (France), which can deliver a current pulse of 6 MA within 800 ns in a Z-pinch load. Using the concept of the dynamic load current multiplier (DLCM), which was proposed by Chuvatin, we expect to increase the load current above 6 MA, while decreasing its rise time to ∼300 ns. The DLCM developed by the CEA Gramat and International Technologies for High Pulsed Power (ITHPP) is a compact system made up of concentric electrodes (auto-transformer), a dynamic flux extruder (cylindrical wire array), a vacuum convolute (eight post-hole rods), and a closing switch (compact vacuum surface switch). The latter is a key component of the system, which is used to prevent the current from flowing into the load until the inductance builds up due to the implosion of the wire array. This paper presents the design and testing of the DLCM surface switch, resulting from both electrostatic simulations and experiments on the SPHINX generator. These studies, carried out either with or without load (open circuit), were valuable for a first experimental evaluation of the DLCM scheme in a microsecond regime and provided detailed information on the surface switch behavior. (authors)

Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

Science.gov (United States)

Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

2014-12-01

Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

Controlled parity switch of persistent currents in quantum ladders

Science.gov (United States)

Filippone, Michele; Bardyn, Charles-Edouard; Giamarchi, Thierry

2018-05-01

We investigate the behavior of persistent currents for a fixed number of noninteracting fermions in a periodic quantum ladder threaded by Aharonov-Bohm and transverse magnetic fluxes Φ and χ . We show that the coupling between ladder legs provides a way to effectively change the ground-state fermion-number parity, by varying χ . Specifically, we demonstrate that varying χ by 2 π (one flux quantum) leads to an apparent fermion-number parity switch. We find that persistent currents exhibit a robust 4 π periodicity as a function of χ , despite the fact that χ →χ +2 π leads to modifications of order 1 /N of the energy spectrum, where N is the number of sites in each ladder leg. We show that these parity-switch and 4 π periodicity effects are robust with respect to temperature and disorder, and outline potential physical realizations using cold atomic gases and photonic lattices, for bosonic analogs of the effects.

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

Science.gov (United States)

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

High frequency Soft Switching Half Bridge Series-Resonant DC-DC Converter Utilizing Gallium Nitride FETs

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold; Petersen, Lars Press

2017-01-01

The need for efficient, smaller, lighter and cheaper power supply units drive the investigation of using high switching frequency soft switching resonant converters. This work presents an 88% efficient 48V nominal input converter switching at 6 MHz and output power of 21 Watts achieving power...... density of 7 W/cm3 for Power-over-Ethernet LED lighting applications. The switching frequency is used to control the output current delivered to the load resistance. The converter was tested using a constant resistance load. The performance and thermal behavior were investigated and reported in this work....

A new soft-switched high step-up DC-DC converter with dual coupled inductors

DEFF Research Database (Denmark)

Forouzesh, Mojtaba; Shen, Yanfeng; Yari, Keyvan

2017-01-01

This paper introduces a new efficient high step-up dc-dc converter with a shared input path and dual series coupled inductors at the output. This converter is suitable for high power applications due to its shared input current that puts low current stresses on the low voltage side switches...

Low prepulse, high power density water dielectric switching

International Nuclear Information System (INIS)

Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

1979-01-01

Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

International Nuclear Information System (INIS)

Ma, W. J.; Zhang, X. Y.; Wang, Ying; Zheng, Yue; Lin, S. P.; Luo, J. M.; Wang, B.; Li, Z. X.

2013-01-01

Nanoscale multilayer structure TiO 2 /BaTiO 3 /TiO 2 has been fabricated on Pt/Ti/SiO 2 /Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO 2 /BaTiO 3 /TiO 2 /Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO 2 play a crucial role in the resistive switching phenomenon and the introduced TiO 2 /BaTiO 3 interfaces result in the high uniformity of bipolar resistive switching characteristics

Periodically Swapping Modulation (PSM) Strategy for Three-Level (TL) DC/DC Converter with Balanced Switch Currents

DEFF Research Database (Denmark)

Liu, Dong; Deng, Fujin; Zhang, Qi

2018-01-01

The asymmetrical modulation strategy is widely used in various types of three-level (TL) DC/DC converters, while the current imbalance among the power switches is one of the important issues. In this paper, a novel periodically swapping modulation (PSM) strategy is proposed for balancing the power...... switches’ currents in various types of TL DC/DC converters. In the proposed PSM strategy, the driving signals of the switch pairs are swapped periodically, which guarantees that the currents through the power switches are kept balanced in every two switching periods. Therefore, the proposed PSM...... strategy can effectively improve the reliability of the converter by balancing the power losses and thermal stresses among the power switches. The operation principle and performances of the proposed PSM strategy are analyzed in detail. Finally, the simulation and experimental results are presented...

Pulsed laser triggered high speed microfluidic switch

Science.gov (United States)

Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

2008-10-01

We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

Magnetic switching of a single molecular magnet due to spin-polarized current

Science.gov (United States)

Misiorny, Maciej; Barnaś, Józef

2007-04-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

Science.gov (United States)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Model predictive control of a high speed switched reluctance generator system

NARCIS (Netherlands)

Marinkov, Sava; De Jager, Bram; Steinbuch, Maarten

2013-01-01

This paper presents a novel voltage control strategy for the high-speed operation of a Switched Reluctance Generator. It uses a linear Model Predictive Control law based on the average system model. The controller computes the DC-link current needed to achieve the tracking of a desired voltage

Analysis and design of a charge pump circuit for high output current applications

NARCIS (Netherlands)

van Steenwijk, Gijs; van Steenwijk, Gijs; Hoen, Klaas; Hoen, Klaas; Wallinga, Hans

1993-01-01

A charge pump circuit has been developed that can deliver high currents even for a system supply voltage of 3 V. The circuit consists of capacitances, connected by MOS switches. The influence of the on-resistance of the switches on the circuit's output resistance has been analysed. The switches are

A new soft switched push pull current fed converter for fuel cell applications

International Nuclear Information System (INIS)

Delshad, Majid; Farzanehfard, Hosein

2011-01-01

In this paper a new zero voltage switching current fed push pull dc-dc converter is proposed for fuel cell generation system. The auxiliary circuit in this converter, not only absorbs the voltage surge across the switches at turn off instance, but also provides zero voltage switching condition for all converter switches. Therefore, the converter efficiency is increased and size and weight of the converter can be decreased. Also implementation of control circuit is very simple since the converter is PWM controlled. In this paper, the proposed dc-dc converter operating modes are analyzed and to verify the converter operation a laboratory prototype is implemented and the experimental results are presented.

High frequency switched-mode stimulation can evoke postsynaptic responses in cerebellar principal neurons

Directory of Open Access Journals (Sweden)

Marijn Van Dongen

2015-03-01

Full Text Available This paper investigates the efficacy of high frequency switched-mode neural stimulation. Instead of using a constant stimulation amplitude, the stimulus is switched on and off repeatedly with a high frequency (up to 100kHz duty cycled signal. By means of tissue modeling that includes the dynamic properties of both the tissue material as well as the axon membrane, it is first shown that switched-mode stimulation depolarizes the cell membrane in a similar way as classical constant amplitude stimulation.These findings are subsequently verified using in vitro experiments in which the response of a Purkinje cell is measured due to a stimulation signal in the molecular layer of the cerebellum of a mouse. For this purpose a stimulator circuit is developed that is able to produce a monophasic high frequency switched-mode stimulation signal. The results confirm the modeling by showing that switched-mode stimulation is able to induce similar responses in the Purkinje cell as classical stimulation using a constant current source. This conclusion opens up possibilities for novel stimulation designs that can improve the performance of the stimulator circuitry. Care has to be taken to avoid losses in the system due to the higher operating frequency.

Improved Turn-on Characteristics of Fast High Current Thyristors

CERN Document Server

Ducimetière, L; Vossenberg, Eugène B

1999-01-01

The beam dumping system of CERN's Large Hadron Collider (LHC) is equipped with fast solid state closing switches, designed for a hold-off voltage of 30 kV and a quasi half sine wave current of 20 kA, with 3 ms rise time, a maximum di/dt of 12 kA/ms and 2 ms fall time. The design repetition rate is 20 s. The switch is composed of ten Fast High Current Thyristors (FHCT’s), which are modified symmetric 4.5 kV GTO thyristors of WESTCODE. Recent studies aiming at improving the turn-on delay, switching speed and at decreasing the switch losses, have led to test an asymmetric not fully optimised GTO thyristor of WESTCODE and an optimised device of GEC PLESSEY Semiconductor (GPS), GB. The GPS FHCT, which gave the best results, is a non irradiated device of 64 mm diameter with a hold-off voltage of 4.5 kV like the symmetric FHCT. Tests results of the GPS FHCT show a reduction in turn-on delay of 40 % and in switching losses of almost 50 % with respect to the symmetric FHCT of WESTCODE. The GPS device can sustain an i...

A magnetically switched kicker for proton extraction

International Nuclear Information System (INIS)

Dinkel, J.; Biggs, J.

1989-03-01

The application of magnetic current amplification and switching techniques to the generation of precise high current pulses for switching magnets is described. The square loop characteristic of Metglas tape wound cores at high excitation levels provides excellent switching characteristics for microsecond pulses. The rugged and passive nature of this type pulser makes it possible to locate the final stages of amplification at the load for maximum efficiency. 12 refs., 8 figs

Structural health monitoring of high voltage electrical switch ceramic insulators in seismic areas

OpenAIRE

REBILLAT, Marc; BARTHES, Clément; MECHBAL, Nazih; MOSALAM, Khalid M.

2014-01-01

International audience; High voltage electrical switches are crucial components to restart rapidly the electrical network right after an earthquake. But there currently exists no automatic procedure to check if these ceramic insulators have suffered after an earthquake, and there exists no method to recertify a given switch. To deploy a vibration-based structural health monitoring method on ceramic insulators a large shake table able to generate accelerations up to 3 g was used. The idea unde...

Repetitive plasma opening switch for powerful high-voltage pulse generators

International Nuclear Information System (INIS)

Dolgachev, G.I.; Zakatov, L.P.; Nitishinskii, M.S.; Ushakov, A.G.

1998-01-01

Results are presented of experimental studies of plasma opening switches that serve to sharpen the pulses of inductive microsecond high-voltage pulse generators. It is demonstrated that repetitive plasma opening switches can be used to create super-powerful generators operating in a quasi-continuous regime. An erosion switching mechanism and the problem of magnetic insulation in repetitive switches are considered. Achieving super-high peak power in plasma switches makes it possible to develop new types of high-power generators of electron beams and X radiation. Possible implementations and the efficiency of these generators are discussed

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

International Nuclear Information System (INIS)

ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

2000-01-01

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

Energy Technology Data Exchange (ETDEWEB)

Lai, Jason [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Yu, Wensong [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Sun, Pengwei [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Leslie, Scott [Powerex, Inc., Harrison, OH (United States); Prusia, Duane [Powerex, Inc., Harrison, OH (United States); Arnet, Beat [Azure Dynamics, Oak Park, MI (United States); Smith, Chris [Azure Dynamics, Oak Park, MI (United States); Cogan, Art [Azure Dynamics, Oak Park, MI (United States)

2012-03-31

The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105°C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

Science.gov (United States)

Suckow, Will; Roberts, Tony; Switzer, Gregg; Terwilliger, Chelle

2011-01-01

Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

Switched Current Micropower 4th Order Lowpass / Highpass Filter

DEFF Research Database (Denmark)

Bogason, Gudmundur

1993-01-01

This paper describes a 4th order lowpass / highpass Butterworth filter implemented in switched current technique. The filter has been designed for low power operation. A prototype implementation has been made and it operates with supply voltages down to 2V and with a total supply current of 211Â......¿A at a sampling rate of 50kHz. The chip includes a clock-generator, three current-followers, sample-and-hold and two 4th order filters. The sampling frequency is restricted to approximately 50kHz and the ratio between sampling frequency and cutoff frequency is 12.5. The dynamic-range was found to be 49d...

Control of a high-speed switched reluctance machine using only the DC-link measurements

NARCIS (Netherlands)

Marinkov, Sava; De Jager, Bram

2015-01-01

In this paper we present a novel speed control strategy for a high-speed Switched Reluctance Machine that uses only the DC-link voltage and current measurements. This eliminates a number of hardware components such as position, speed, phase current and phase voltage sensors. It further lowers the

A High-Precision Control for a ZVT PWM Soft-Switching Inverter to Eliminate the Dead-Time Effect

Directory of Open Access Journals (Sweden)

Baoquan Kou

2016-07-01

Full Text Available Attributing to the advantages of high efficiency, low electromagnetic interference (EMI noise and closest to the pulse-width-modulation (PWM converter counterpart, zero-voltage-transition (ZVT PWM soft-switching inverters are very suitable for high-performance applications. However, the conventional control algorithms intended for high efficiency generally results in voltage distortion. Thus, this paper, for the first time, proposes a high-precision control method to eliminate the dead-time effect through controlling the auxiliary current in the auxiliary resonant snubber inverter (ARSI, which is a typical ZVT PWM inverter. The dead-time effect of ARSI is analyzed, which is distinguished from hard-switching inverters. The proposed high-precision control is introduced based on the investigation of dead-time effect. A prototype was developed to verify the effectiveness of the proposed control. The experimental results shows that the total harmonic distortion (THD of the output current of the ARSI can be reduced compared with that of the hard-switching inverter, because the blanking delay error is eliminated. The quality of the output current and voltage can be further improved by utilizing the proposed control method.

Solid state bistable power switch

Science.gov (United States)

Bartko, J.; Shulman, H.

1970-01-01

Tin and copper provide high current and switching time capabilities for high-current resettable fuses. They show the best performance for trip current and degree of reliability, and have low coefficients of thermal expansion.

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

International Nuclear Information System (INIS)

Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wong, Kin L.; Wang, Kang L.; Wu, Hao; Han, Xiufeng; Zhang, Zongzhi; Khalili Amiri, Pedram

2016-01-01

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co_4_0Fe_4_0B_2_0 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

Fast-opening vacuum switches for high-power inductive energy storage

International Nuclear Information System (INIS)

Cooperstein, G.

1988-01-01

The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

Previous research on switched-capacitor DC-DC converters has focused on low-voltage and/or high-power ranges where the efficiencies are dominated by conduction loss. Switched-capacitor DC-DC converters at high-voltage (> 100 V) low-power (high efficiency and high power density...... are anticipated to emerge. This paper presents a switched-capacitor converter with an input voltage up to 380 V (compatible with rectified European mains) and a maximum output power of 10 W. GaN switches and SiC diodes are analytically compared and actively combined to properly address the challenges at high......-voltage low-current levels, where switching loss becomes significant. Further trade-off between conduction loss and switching loss is experimentally optimized with switching frequencies. Three variant designs of the proposed converter are implemented, and the trade-off between the efficiency and the power...

An integrated circuit switch

Science.gov (United States)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

Science.gov (United States)

Gummin, Mark A.

2011-01-01

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Soft switching buck-boost converter for photovoltaic power generation; Taiyoko hatsuden no tame no soft switching shokoatsu converter

Energy Technology Data Exchange (ETDEWEB)

Lee, H. [Kyungnam University (Korea, Republic of)

1996-10-27

A soft switching method with small switching loss was proposed for the purpose of increasing the efficiency of a DC-DC boost converter which converted a DC current generated by solar cells to a variable DC current. Existing current converters are supplemented by using a snubber circuit around the switch so as to protect the switch by a hard switching action. However, with an increase of the output current, snubber loss is increased, reducing the efficiency. In order to solve this problem, the partial resonant switch method was applied to the converter; with this method of partially forming a resonant circuit only at the time of turning on/off of the switch, the switching loss was reduced through the soft switching, thereby making the proposed converter operate with high efficiency. Moreover, the resonant element of the partial resonant circuit using a snubber condenser, the energy accumulated in the condenser was regenerated on the power supply side without loss of snubber. With the regenerated energy, the proposed converter was provided with a smaller ratio of switching to use than the conventional converter. 4 refs., 7 figs., 1 tab.

Ultra High-Speed Radio Frequency Switch Based on Photonics.

Science.gov (United States)

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Science.gov (United States)

Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

2018-02-14

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

circuit efficiency of >80% were achieved for an operation at 0.45 GHz when adjusting the transistor size for lower operation frequencies. A further decisive improvement of speed and circuit complexity was found by the implementation of enhancement-mode GaN transistors based on a high-transconductance gate-recess technology. Transistors with a threshold voltage of +1 V were demonstrated with a high current drive capability and a maximum transconductance of up to 600 mS/mm. Their reduced input voltage swing tremendously increases the compatibility of digital power amplifier circuits based on GaN and external digital driver and modulator circuits based on silicon technology. Moreover, an innovative development, the series-diode GaN transistor, replaces an off-chip hybrid diode in the class-S amplifier with an integrated solution. It reduces parasitic switching losses and improves the total amplifier properties in terms of operation frequency, efficiency, and circuit complexity. A differential switch-mode core chip featuring series-diode transistors and additional onchip filter elements enabled our partner EADS to realize the first class-S amplifier at 2 GHz worldwide in a module.

New Pulsed Power Technology for High Current Accelerators

International Nuclear Information System (INIS)

Caporaso, G J

2002-01-01

Recent advances in solid-state modulators now permit the design of a new class of high current accelerators. These new accelerators will be able to operate in burst mode at frequencies of several MHz with unprecedented flexibility and precision in pulse format. These new modulators can drive accelerators to high average powers that far exceed those of any other technology and can be used to enable precision beam manipulations. New insulator technology combined with novel pulse forming lines and switching may enable the construction of a new type of high gradient, high current accelerator. Recent developments in these areas will be reviewed

Open-loop correction for an eddy current dominated beam-switching magnet.

Science.gov (United States)

Koseki, K; Nakayama, H; Tawada, M

2014-04-01

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10(-4) to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10(-3). By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10(-4), which is an acceptable value, was achieved.

High voltage switches having one or more floating conductor layers

Science.gov (United States)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

2015-11-24

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

Resistive switching near electrode interfaces: Estimations by a current model

Science.gov (United States)

Schroeder, Herbert; Zurhelle, Alexander; Stemmer, Stefanie; Marchewka, Astrid; Waser, Rainer

2013-02-01

The growing resistive switching database is accompanied by many detailed mechanisms which often are pure hypotheses. Some of these suggested models can be verified by checking their predictions with the benchmarks of future memory cells. The valence change memory model assumes that the different resistances in ON and OFF states are made by changing the defect density profiles in a sheet near one working electrode during switching. The resulting different READ current densities in ON and OFF states were calculated by using an appropriate simulation model with variation of several important defect and material parameters of the metal/insulator (oxide)/metal thin film stack such as defect density and its profile change in density and thickness, height of the interface barrier, dielectric permittivity, applied voltage. The results were compared to the benchmarks and some memory windows of the varied parameters can be defined: The required ON state READ current density of 105 A/cm2 can only be achieved for barriers smaller than 0.7 eV and defect densities larger than 3 × 1020 cm-3. The required current ratio between ON and OFF states of at least 10 requests defect density reduction of approximately an order of magnitude in a sheet of several nanometers near the working electrode.

Development of a switched integrator amplifier for high-accuracy optical measurements

International Nuclear Information System (INIS)

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-01-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed

Development of a switched integrator amplifier for high-accuracy optical measurements.

Science.gov (United States)

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-11-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed.

Experimental investigation of the ion current distribution in microsecond plasma opening switch

Energy Technology Data Exchange (ETDEWEB)

Bystritskij, V; Grigor` ev, S; Kharlov, A; Sinebryukhov, A [Russian Academy of Sciences, Tomsk (Russian Federation). Institute of Electrophysics

1997-12-31

This paper is devoted to the investigations of properties of the microsecond plasma opening switch (MPOS) as an ion beam source for surface modification. Two plasma sources were investigated: flash-board and cable guns. The detailed measurements of axial and azimuthal distributions of ion current density in the switch were performed. It was found that the azimuthal inhomogeneity of the ion beam increases from the beginning to the end of MPOS. The advantages and problems of this approach are discussed. (author). 5 figs., 2 refs.

A β-Ta system for current induced magnetic switching in the absence of external magnetic field

Science.gov (United States)

Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

2018-05-01

Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

Investigation of switch designs for the dynamic load current multiplier scheme on the SPHYNX microsecond linear transformer driver

International Nuclear Information System (INIS)

Maysonnave, T.; Bayol, F.; Demol, G.; Almeida, T. d'; Lassalle, F.; Morell, A.; Grunenwald, J.; Chuvatin, A.S.; Pecastaing, L.; De Ferron, A.S.

2014-01-01

SPHINX is a microsecond linear transformer driver LTD, used essentially for implosion of Z-pinch loads in direct drive mode. It can deliver a 6-MA current pulse within 800 ns into a Z-pinch load. The dynamic load current multiplier concept enables the current pulse to be modified by increasing its amplitude while reducing its rise time before being delivered to the load. This compact system is made up of concentric electrodes (auto transformer), a dynamic flux extruder (cylindrical wire array), a vacuum convolute (eight post-holes), and a vacuum closing switch, which is the key component of the system. Several different schemes are investigated for designing a vacuum switch suitable for operating the dynamic load current multiplier on the SPHINX generator for various applications, including isentropic compression experiments and Z-pinch radiation effects studies. In particular, the design of a compact vacuum surface switch and a multichannel vacuum switch, located upstream of the load are studied. Electrostatic simulations supporting the switch designs are presented along with test bed experiments. Initial results from shots on the SPHINX driver are also presented. (authors)

IGBT Dynamic Loss Reduction through Device Level Soft Switching

Directory of Open Access Journals (Sweden)

Lan Ma

2018-05-01

Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

2017-07-15

In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

Energy losses in switches

International Nuclear Information System (INIS)

Martin, T.H.; Seamen, J.F.; Jobe, D.O.

1993-01-01

The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

Science.gov (United States)

Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

2015-07-08

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

High Performance Gigabit Ethernet Switches for DAQ Systems

CERN Document Server

Barczyk, Artur

2005-01-01

Commercially available high performance Gigabit Ethernet (GbE) switches are optimized mostly for Internet and standard LAN application traffic. DAQ systems on the other hand usually make use of very specific traffic patterns, with e.g. deterministic arrival times. Industry's accepted loss-less limit of 99.999% may be still unacceptably high for DAQ purposes, as e.g. in the case of the LHCb readout system. In addition, even switches passing this criteria under random traffic can show significantly higher loss rates if subject to our traffic pattern, mainly due to buffer memory limitations. We have evaluated the performance of several switches, ranging from "pizza-box" devices with 24 or 48 ports up to chassis based core switches in a test-bed capable to emulate realistic traffic patterns as expected in the readout system of our experiment. The results obtained in our tests have been used to refine and parametrize our packet level simulation of the complete LHCb readout network. In this paper we report on the...

Energy storage, compression, and switching. Vol. 2

International Nuclear Information System (INIS)

Nardi, V.; Bostick, W.H.; Sahlin, H.

1983-01-01

This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

Wavelet Entropy-Based Traction Inverter Open Switch Fault Diagnosis in High-Speed Railways

Directory of Open Access Journals (Sweden)

Keting Hu

2016-03-01

Full Text Available In this paper, a diagnosis plan is proposed to settle the detection and isolation problem of open switch faults in high-speed railway traction system traction inverters. Five entropy forms are discussed and compared with the traditional fault detection methods, namely, discrete wavelet transform and discrete wavelet packet transform. The traditional fault detection methods cannot efficiently detect the open switch faults in traction inverters because of the low resolution or the sudden change of the current. The performances of Wavelet Packet Energy Shannon Entropy (WPESE, Wavelet Packet Energy Tsallis Entropy (WPETE with different non-extensive parameters, Wavelet Packet Energy Shannon Entropy with a specific sub-band (WPESE3,6, Empirical Mode Decomposition Shannon Entropy (EMDESE, and Empirical Mode Decomposition Tsallis Entropy (EMDETE with non-extensive parameters in detecting the open switch fault are evaluated by the evaluation parameter. Comparison experiments are carried out to select the best entropy form for the traction inverter open switch fault detection. In addition, the DC component is adopted to isolate the failure Isolated Gate Bipolar Transistor (IGBT. The simulation experiments show that the proposed plan can diagnose single and simultaneous open switch faults correctly and timely.

Conceptual design of a high-speed electromagnetic switch for a modified flux-coupling-type SFCL and its application in renewable energy system.

Science.gov (United States)

Chen, Lei; Chen, Hongkun; Yang, Jun; Shu, Zhengyu; He, Huiwen; Shu, Xin

2016-01-01

The modified flux-coupling-type superconducting fault current (SFCL) is a high-efficient electrical auxiliary device, whose basic function is to suppress the short-circuit current by controlling the magnetic path through a high-speed switch. In this paper, the high-speed switch is based on electromagnetic repulsion mechanism, and its conceptual design is carried out to promote the application of the modified SFCL. Regarding that the switch which is consisting of a mobile copper disc, two fixed opening and closing coils, the computational method for the electromagnetic force is discussed, and also the dynamic mathematical model including circuit equation, magnetic field equation as well as mechanical motion equation is theoretically deduced. According to the mathematical modeling and calculation of characteristic parameters, a feasible design scheme is presented, and the high-speed switch's response time can be less than 0.5 ms. For that the modified SFCL is equipped with this high-speed switch, the SFCL's application in a 10 kV micro-grid system with multiple renewable energy sources are assessed in the MATLAB software. The simulations are well able to affirm the SFCL's performance behaviors.

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

Directory of Open Access Journals (Sweden)

Saeid Marjani

2016-09-01

Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

High power switches for ion induction linacs

International Nuclear Information System (INIS)

Humphries, S. Jr.; Savage, M.; Saylor, W.B.

1985-01-01

The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

High power switches for ion induction linacs

International Nuclear Information System (INIS)

Humphries, S.; Savage, M.; Saylor, W.B.

1985-01-01

The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

International Nuclear Information System (INIS)

Patton, Steven T; Hu Jianjun; Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A

2008-01-01

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core (∼10 nm diameter gold nanoparticle) with smaller metallic nanoparticles (∼2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 μA) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10 6 hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts

High voltage, high power operation of the plasma erosion opening switch

International Nuclear Information System (INIS)

Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

1987-01-01

A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

A HIGH CURRENT, HIGH VOLTAGE SOLID-STATE PULSE GENERATOR FOR THE NIF PLASMA ELECTRODE POCKELS CELL

International Nuclear Information System (INIS)

Arnold, P A; Barbosa, F; Cook, E G; Hickman, B C; Akana, G L; Brooksby, C A

2007-01-01

A high current, high voltage, all solid-state pulse modulator has been developed for use in the Plasma Electrode Pockels Cell (PEPC) subsystem in the National Ignition Facility. The MOSFET-switched pulse generator, designed to be a more capable plug-in replacement for the thyratron-switched units currently deployed in NIF, offers unprecedented capabilities including burst-mode operation, pulse width agility and a steady-state pulse repetition frequency exceeding 1 Hz. Capable of delivering requisite fast risetime, 17 kV flattop pulses into a 6 (Omega) load, the pulser employs a modular architecture characteristic of the inductive adder technology, pioneered at LLNL for use in acceleration applications, which keeps primary voltages low (and well within the capabilities of existing FET technology), reduces fabrication costs and is amenable to rapid assembly and quick field repairs

Operation of a semiconductor opening switch at ultrahigh current densities

International Nuclear Information System (INIS)

Lyubutin, S. K.; Rukin, S. N.; Slovikovsky, B. G.; Tsyranov, S. N.

2012-01-01

The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + -p-n-n + structure and a p-n junction depth from 145 to 180 μm are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (∼45 μm) layer of the structure’s heavily doped p-region, in which the acceptor concentration exceeds 10 16 cm −3 , and the current cutoff process depends weakly on the p-n junction depth.

On a mechanism of switching off low-hybrid run away currents in tokamak devices

International Nuclear Information System (INIS)

Budnikov, V.N.; Esipov, L.A.; Irzak, M.A.

1990-01-01

The problem of the generation of low-hybrid run-away currents (LR) in tokamak devices is described. The mechanism of switching off LRCs is considered. Qualitative representation of the density limit, the transitions of which stops the generation of currents, is given

Study on pulsed-discharge devices with high current rising rate for point spot short-wavelength source in dense plasma observations

International Nuclear Information System (INIS)

Tachinami, Fumitaka; Anzai, Nobuyuki; Sasaki, Toru; Kikuchi, Takashi; Harada, Nob.

2014-01-01

A pulsed-power generator with high current rise based on a pulse-forming-network was studied toward generating intense point-spot X-ray source. To obtain the high rate of current rise, we have designed the compact discharge device with low circuit inductance. The results indicate that the inductance of the compact discharge device was dominated by a gap switch inductance. To reduce the gap switch inductance and operation voltage, the feasible gap switch inductance in the vacuum chamber has been estimated by the circuit simulation. The gap switch inductance can be reduced by the lower pressure operation. It means that the designed discharge device achieves the rate of current rise of 10 12 A/s

Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

Directory of Open Access Journals (Sweden)

Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

2010-01-01

Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

An Original Transformer and Switched-Capacitor (T & SC-Based Extension for DC-DC Boost Converter for High-Voltage/Low-Current Renewable Energy Applications: Hardware Implementation of a New T & SC Boost Converter

Directory of Open Access Journals (Sweden)

Sanjeevikumar Padmanaban

2018-03-01

Full Text Available In this article a new Transformer and Switched Capacitor-based Boost Converter (T & SC-BC is proposed for high-voltage/low-current renewable energy applications. The proposed T & SC-BC is an original extension for DC-DC boost converter which is designed by utilizing a transformer and switched capacitor (T & SC. Photovoltaic (PV energy is a fast emergent segment among the renewable energy systems. The proposed T & SC-BC combines the features of the conventional boost converter and T & SC to achieve a high voltage conversion ratio. A Maximum Power Point Tracking (MPPT controller is compulsory and necessary in a PV system to extract maximum power. Thus, a photovoltaic MPPT control mechanism also articulated for the proposed T & SC-BC. The voltage conversion ratio (Vo/Vin of proposed converter is (1 + k/(1 − D where, k is the turns ratio of the transformer and D is the duty cycle (thus, the converter provides 9.26, 13.88, 50/3 voltage conversion ratios at 78.4 duty cycle with k = 1, 2, 2.6, respectively. The conspicuous features of proposed T & SC-BC are: (i a high voltage conversion ratio (Vo/Vin; (ii continuous input current (Iin; (iii single switch topology; (iv single input source; (v low drain to source voltage (VDS rating of control switch; (vi a single inductor and a single untapped transformer are used. Moreover, the proposed T & SC-BC topology was compared with recently addressed DC-DC converters in terms of number of components, cost, voltage conversion ratio, ripples, efficiency and power range. Simulation and experimental results are provided which validate the functionality, design and concept of the proposed approach.

The Effects of 10 Hz Transcranial Alternating Current Stimulation on Audiovisual Task Switching

Directory of Open Access Journals (Sweden)

Michael S. Clayton

2018-02-01

Full Text Available Neural oscillations in the alpha band (7–13 Hz are commonly associated with disengagement of visual attention. However, recent studies have also associated alpha with processes of attentional control and stability. We addressed this issue in previous experiments by delivering transcranial alternating current stimulation at 10 Hz over posterior cortex during visual tasks (alpha tACS. As this stimulation can induce reliable increases in EEG alpha power, and given that performance on each of our visual tasks was negatively associated with alpha power, we assumed that alpha tACS would reliably impair visual performance. However, alpha tACS was instead found to prevent both deteriorations and improvements in visual performance that otherwise occurred during sham & 50 Hz tACS. Alpha tACS therefore appeared to exert a stabilizing effect on visual attention. This hypothesis was tested in the current, pre-registered experiment by delivering alpha tACS during a task that required rapid switching of attention between motion, color, and auditory subtasks. We assumed that, if alpha tACS stabilizes visual attention, this stimulation should make it harder for people to switch between visual tasks, but should have little influence on transitions between auditory and visual subtasks. However, in contrast to this prediction, we observed no evidence of impairments in visuovisual vs. audiovisual switching during alpha vs. control tACS. Instead, we observed a trend-level reduction in visuoauditory switching accuracy during alpha tACS. Post-hoc analyses showed no effects of alpha tACS in response time variability, diffusion model parameters, or on performance of repeat trials. EEG analyses also showed no effects of alpha tACS on endogenous or stimulus-evoked alpha power. We discuss possible explanations for these results, as well as their broader implications for current efforts to study the roles of neural oscillations in cognition using tACS.

High Efficiency Boost Converter with Three State Switching Cell

DEFF Research Database (Denmark)

Klimczak, Pawel; Munk-Nielsen, Stig

2009-01-01

is on performance improvement of this type of the converter. Use of foil windings helps to reduce conduction losses in magnetic components and to reduce size of these components. Also it has been demonstrated that the regulation range of this type of converter can be increased by operation with duty cycle lower......The boost converter with the three-state switching cell seems to be a good candidate for a dc-dc stage for non-isolated generators based on alternative energy sources. It provides a high voltage gain, a reduced voltage stress on transistors and limited input current ripples. In this paper the focus...

Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

Energy Technology Data Exchange (ETDEWEB)

Patton, Steven T; Hu Jianjun [University of Dayton Research Institute, Dayton, OH 45469-0168 (United States); Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433-7750 (United States)], E-mail: steve.patton@wpafb.af.mil, E-mail: rajesh.naik@wpafb.af.mil

2008-10-08

Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core ({approx}10 nm diameter gold nanoparticle) with smaller metallic nanoparticles ({approx}2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 {mu}A) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10{sup 6} hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts.

A novel solid-state control system for the minimization of re-switching transient currents of induction motor

International Nuclear Information System (INIS)

Abro, M.R.; Larik, A.S.; Mahar, M.A.

2005-01-01

This work is an investigation into the minimizing re-closure transient currents of induction motors by activating NOVEL solid state control system switching at a matched condition. This emphasis is placed upon-circuit transition starting of cage motors, particularly star-delta switching. The initial study is carried out on single-phase induction motion. This system is capable of effective sensing re-closure of a switched off running single-phase induction motor. Further this scheme could be developed to give sequential delta closure of a switched off running three-phase induction motor during 1st cycles following the opening of the star mode. Consideration is also given to the possibility of using sensed re-closure to minimize transient whenever the supply to a running induction motor is briefly interrupted, irrespective of whether the interruption is by accident design. A brief study is made into the type of transient currents generated by opening the circuit of a running induction motor. The importance of the switching pattern for star-delta starting is explained and emphasized. (author)

Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure

International Nuclear Information System (INIS)

Volkov, N V; Eremin, E V; Tsikalov, V S; Patrin, G S; Kim, P D; Seong-Cho, Yu; Kim, Dong-Hyun; Chau, Nguyen

2009-01-01

The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

OpenAIRE

Misiorny, Maciej; Barnaś, Józef

2013-01-01

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonan...

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

Science.gov (United States)

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

Science.gov (United States)

Misiorny, Maciej; Barnaś, Józef

2013-07-01

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom’s or SMM’s spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonant peaks in the average values of the molecule’s spin and in the charge current. These features appear at some resonant fields and are observable when at least one of the electrodes is ferromagnetic.

External field induced switching of tunneling current in the coupled quantum dots

OpenAIRE

Mantsevich, V. N.; Maslova, N. S.; Arseyev, P. I.

2014-01-01

We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling curre...

Switching Schools: Reconsidering the Relationship Between School Mobility and High School Dropout

Science.gov (United States)

Gasper, Joseph; DeLuca, Stefanie; Estacion, Angela

2014-01-01

Youth who switch schools are more likely to demonstrate a wide array of negative behavioral and educational outcomes, including dropping out of high school. However, whether switching schools actually puts youth at risk for dropout is uncertain, since youth who switch schools are similar to dropouts in their levels of prior school achievement and engagement, which suggests that switching schools may be part of the same long-term developmental process of disengagement that leads to dropping out. Using data from the National Longitudinal Survey of Youth 1997, this study uses propensity score matching to pair youth who switched high schools with similar youth who stayed in the same school. We find that while over half the association between switching schools and dropout is explained by observed characteristics prior to 9th grade, switching schools is still associated with dropout. Moreover, the relationship between switching schools and dropout varies depending on a youth's propensity for switching schools. PMID:25554706

High voltage switch triggered by a laser-photocathode subsystem

Science.gov (United States)

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

High-speed packet switching network to link computers

CERN Document Server

Gerard, F M

1980-01-01

Virtually all of the experiments conducted at CERN use minicomputers today; some simply acquire data and store results on magnetic tape while others actually control experiments and help to process the resulting data. Currently there are more than two hundred minicomputers being used in the laboratory. In order to provide the minicomputer users with access to facilities available on mainframes and also to provide intercommunication between various experimental minicomputers, CERN opted for a packet switching network back in 1975. It was decided to use Modcomp II computers as switching nodes. The only software to be taken was a communications-oriented operating system called Maxcom. Today eight Modcomp II 16-bit computers plus six newer Classic minicomputers from Modular Computer Services have been purchased for the CERNET data communications networks. The current configuration comprises 11 nodes connecting more than 40 user machines to one another and to the laboratory's central computing facility. (0 refs).

A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

Science.gov (United States)

Gollan, Tamar H.; Goldrick, Matthew

2018-01-01

The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

Modeling and Mitigation for High Frequency Switching Transients Due to Energization in Offshore Wind Farms

Directory of Open Access Journals (Sweden)

Yanli Xin

2016-12-01

Full Text Available This paper presents a comprehensive investigation on high frequency (HF switching transients due to energization of vacuum circuit breakers (VCBs in offshore wind farms (OWFs. This research not only concerns the modeling of main components in collector grids of an OWF for transient analysis (including VCBs, wind turbine transformers (WTTs, submarine cables, but also compares the effectiveness between several mainstream switching overvoltage (SOV protection methods and a new mitigation method called smart choke. In order to accurately reproduce such HF switching transients considering the current chopping, dielectric strength (DS recovery capability and HF quenching capability of VCBs, three models are developed, i.e., a user–defined VCB model, a HF transformer terminal model and a three-core (TC frequency dependent model of submarine cables, which are validated through simulations and compared with measurements. Based on the above models and a real OWF configuration, a simulation model is built and several typical switching transient cases are investigated to analyze the switching transient process and phenomena. Subsequently, according to the characteristics of overvoltages, appropriate parameters of SOV mitigation methods are determined to improve their effectiveness. Simulation results indicate that the user–defined VCB model can satisfactorily simulate prestrikes and the proposed component models display HF characteristics, which are consistent with onsite measurement behaviors. Moreover, the employed protection methods can suppress induced SOVs, which have a steep front, a high oscillation frequency and a high amplitude, among which the smart choke presents a preferable HF damping effect.

An In-Rush Current Suppression Technique for the Solid-State Transfer Switch System

Science.gov (United States)

Cheng, Po-Tai; Chen, Yu-Hsing

More and more utility companies provide dual power feeders as a premier service of high power quality and reliability. To take advantage of this, the solid-state transfer switch (STS) is adopted to protect the sensitive load against the voltage sag. However, the fast transfer process may cause in-rush current on the load-side transformer due to the resulting DC-offset in its magnetic flux as the load-transfer is completed. The in-rush current can reach 2∼6 p.u. and it may trigger the over-current protections on the power feeder. This paper develops a flux estimation scheme and a thyristor gating scheme based on the impulse commutation bridge STS (ICBSTS) to minimize the DC-offset on the magnetic flux. By sensing the line voltages of both feeders, the flux estimator can predict the peak transient flux linkage at the moment of load-transfer and evaluate a suitable moment for the transfer to minimize the in-rush current. Laboratory test results are presented to validate the performance of the proposed system.

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Energy Technology Data Exchange (ETDEWEB)

Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn [Institute of Microelectronics, Peking University, 100871 Beijing (China); IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Celano, U.; Xu, Z.; Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Goux, L.; Fantini, A.; Degraeve, R.; Youssef, A.; Jurczak, M. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Liu, L., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; Cheng, Y.; Kang, J. [Institute of Microelectronics, Peking University, 100871 Beijing (China)

2016-03-21

In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50 × 50 nm{sup 2} device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

Science.gov (United States)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

The Atlas load protection switch

CERN Document Server

Davis, H A; Dorr, G; Martínez, M; Gribble, R F; Nielsen, K E; Pierce, D; Parsons, W M

1999-01-01

Atlas is a high-energy pulsed-power facility under development to study materials properties and hydrodynamics experiments under extreme conditions. Atlas will implode heavy liner loads (m~45 gm) with a peak current of 27-32 MA delivered in 4 mu s, and is energized by 96, 240 kV Marx generators storing a total of 23 MJ. A key design requirement for Atlas is obtaining useful data for 95601130f all loads installed on the machine. Materials response calculations show current from a prefire can damage the load requiring expensive and time consuming replacement. Therefore, we have incorporated a set of fast-acting mechanical switches in the Atlas design to reduce the probability of a prefire damaging the load. These switches, referred to as the load protection switches, short the load through a very low inductance path during system charge. Once the capacitors have reached full charge, the switches open on a time scale short compared to the bank charge time, allowing current to flow to the load when the trigger pu...

Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

OpenAIRE

Misiorny, Maciej; Barnas, Józef

2006-01-01

Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

High efficiency three-phase power factor correction rectifier using SiC switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Nymand, Morten

2017-01-01

This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based threephase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the siz...

Very High Frequency Switch-Mode Power Supplies.:Miniaturization of Power Electronics.

OpenAIRE

Madsen, Mickey Pierre; Andersen, Michael A. E.; Knott, Arnold

2015-01-01

The importance of technology and electronics in our daily life is constantly increasing. At the same time portability and energy efficiency are currently some of the hottest topics. This creates a huge need for power converters in a compact form factor and with high efficiency, which can supply these electronic devices. This calls for new technologies in order to miniaturize the power electronics of today. One way to do this is by increasing the switching frequency dramatically and develop ve...

Comparison of Ion Beam opening switch and plasma opening switch performance

International Nuclear Information System (INIS)

Greenly, J.R.; Rondeau, G.D.; Sheldon, H.T.; Dreike, P.L.

1986-01-01

The Ion Beam opening switch (IBOS) experiment has shown that an intense charge-neutralized ion beam can carry current across a vacuum magnetically-insulated transmission line and then transfer that current to a downstream load quickly. In the IBOS experiment, a 10 cm wide parallel plate transmission line was fed up to 100 kA peak current by a 4Ω, 100 ns pulser. An ion beam of up to 100 A/cm/sup 2/, 100-300 keV protons or carbon was injected through the anode of the line in a 10 cm x 10 cm region. The line terminated in either a 15 nH short circuit or an electron diode with variable gap. The ion beam switch was able to carry up to 70 kA of line current before load current began to flow. This model is also quantitatively consistent with the observation that switch conduction current is not linear with either injected ion beam current or switch area

High current high accuracy IGBT pulse generator

International Nuclear Information System (INIS)

Nesterov, V.V.; Donaldson, A.R.

1995-05-01

A solid state pulse generator capable of delivering high current triangular or trapezoidal pulses into an inductive load has been developed at SLAC. Energy stored in a capacitor bank of the pulse generator is switched to the load through a pair of insulated gate bipolar transistors (IGBT). The circuit can then recover the remaining energy and transfer it back to the capacitor bank without reversing the capacitor voltage. A third IGBT device is employed to control the initial charge to the capacitor bank, a command charging technique, and to compensate for pulse to pulse power losses. The rack mounted pulse generator contains a 525 μF capacitor bank. It can deliver 500 A at 900V into inductive loads up to 3 mH. The current amplitude and discharge time are controlled to 0.02% accuracy by a precision controller through the SLAC central computer system. This pulse generator drives a series pair of extraction dipoles

E-beam high voltage switching power supply

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

International Nuclear Information System (INIS)

Shimer, D.W.; Lange, A.C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360 degree/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs

Heavy-duty explosively operated pulsed opening and closing switches

International Nuclear Information System (INIS)

Peterson, D.R.; Price, J.H.; Upshaw, J.L.; Weldon, W.F.; Zowarka, R.C.; Gully, J.H.; Spann, M.L.

1991-01-01

This paper discusses improvements to heavy duty, explosively operated, opening and closing switches to reduce component cost, installation cost, and turnaround time without sacrificing reliability. Heavy duty opening and closing switches operated by small explosive charges (50 g or less) are essential to operation of the 60 MJ Balcones power supply. The six independent modules - a 10 MJ homopolar generator (HPG) and a 6 μH storage inductor - can be discharged sequentially, a valuable feature for shaping the current pulse delivered to loads such as high-energy railguns. Each delayed inductor must be isolated from the railgun circuit with a heavy duty closing switch capable of carrying megampere currents to millisecond duration. Similar closing switches are used to crowbar the railgun as the projectile approaches the muzzle: noise reduction, reduction of muzzle arc damage, and reduction of post-launch perturbation of projectile flight. The switches - both opening and closing - are characterized by microhm resistance in the closed state. Current is carried in metallic conductors. Metal-to-metal seams which carry current are maintained in uniform high pressure contact. Efficient switching is crucial to efficient conversion: rotor kinetic energy to stored inductive energy with ∼50% efficiency, stored inductive energy to projectile kinetic energy with ∼30% efficiency. The switches must operate with a precision and repeatability of 10 -5 s, readily achievable with explosives. The opening switches must be structurally and thermally capable of carrying megampere currents for more than 100 ms (∼10 5 C) and develop 10 kV upon opening, stay open for 10 - 2 s, and safely and reliably dissipate megajoules of inductive energy in the event of a fault, a failure of the switch to operate or an attempt to commutate into an open circuit

Attention switching after dietary brain 5-HT challenge in high impulsive subjects.

Science.gov (United States)

Markus, C Rob; Jonkman, Lisa M

2007-09-01

High levels of impulsivity have adverse effects on performance in cognitive tasks, particularLy in those tasks that require high attention investment. Furthermore, both animal and human research has indicated that reduced brain serotonin (5-HT) function is associated with increases in impulsive behaviour or decreased inhibition ability, but the effects of 5-HT challenge have not yet been investigated in subjects vulnerable to impulsivity. The present study aimed to investigate whether subjects with high trait impulsivity perform worse than low impulsive subjects in a task switching paradigm in which they have to rapidly shift their attention between two response rules, and to investigate the influence of a 5-HT enhancing diet. Healthy subjects with high ( n = 19) and low (n = 18) trait impulsivity scores participated in a double-blind placebo-controlled study. All subjects performed the attention switch task in the morning following breakfast containing either tryptophan-rich alpha-lactalbumin (4.8 g/100 g TRP) or placebo protein (1.4 g/100 g TRP). Whereas there were no baseline differences between high and low impulsive subjects in task switching abilities, high impulsive subjects made significantly more switch errors and responded slower after dietary 5-HT stimulation, whereas no dietary effects were found on task switching performance in low-impulsive subjects. The deterioration in task switching performance induced by the 5-HT enhancing diet in high impulsive subjects was suggested to be established by general arousal/attention-reducing effects of 5-HT, which might have a larger impact in high impulsive subjects due to either different brain circuitry involved in task switching in this group or lower baseline arousal levels.

A plasma switch synchronous closing operations in high-voltage networks

International Nuclear Information System (INIS)

Mourente, P.

1984-01-01

Overvoltages and overcurrent arising in energizing or in fast reclosing operations are a concerning problem in high-voltage networks. Reduction of overvoltages and overcurrents is possible using the synchronous closing technique. Some attempts have been done to perform the synchronous closing with conventional circuit-breakers. But since the requirements to synchronous closing and to current interruption are very contradictory this technique is not yet a common practice. Three simple cases may be used as examples to show the benefits of synchronous closing; energizaton of grounded star capacitor bank; back-to-back switching of large capacitor banks; and fast reclosing on transmission lines

High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

International Nuclear Information System (INIS)

Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

1999-01-01

The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 micros (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract

High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

Energy Technology Data Exchange (ETDEWEB)

Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

1999-04-10

The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 {micro}s (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract.

Ferroelectric switch for a high-power Ka-band active pulse compressor

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

2013-12-18

Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

High power semiconductor switching in the nanosecond regime

International Nuclear Information System (INIS)

Zucker, O.S.; Long, J.R.; Smith, V.L.; Page, D.J.; Roberts, J.S.

1975-12-01

Light activated multilayered silicon semiconductor devices have been used to switch at megawatt power levels with nanosecond turnon time. Current rate of rise of 700 kA/μs at 10 kA, with 1 kV across the load have been achieved. Recovery time of 1 millisec has been obtained. Applicability to fusion research needs is discussed

Soft switching PWM isolated boost converter for fuel cell application

Energy Technology Data Exchange (ETDEWEB)

Rezaei, M.; Adib, E. [Isfahan Univ. of Technology, Isfahan (Iran, Islamic Republic of)

2009-07-01

This presentation introduced a newly developed soft switching, isolated boost type converter for fuel cell applications. With a simple PWM control circuit, the converter achieves zero voltage switching the main switch. Since the auxiliary circuit is soft switched, the converter can operate at high powers which make it suitable for fuel cell applications. In particular, the converter is suitable for the interface of fuel cell and inverters because of its high voltage gain and isolation between input and output sources. In addition, the input current of the converter (current drained from the fuel cell) is almost constant since it is a boost type converter. The converter was analyzed and the simulation results validate the theoretical analysis.

Magnetization switching and microwave oscillations in nanomagnets driven by spin-polarized currents

International Nuclear Information System (INIS)

Bertotti, G.; Magni, A.; Serpico, C.; d'Aquino, M.; Mayergoyz, I. D.; Bonin, R.

2005-01-01

Full text: Considerable interest has been generated in recent years by the discovery that a current of spin-polarized electrons can apply appreciable torques to a nanoscale ferromagnet. This mechanism was theoretically predicted and subsequently confirmed by a number of experiments which have shown that spin transfer can indeed induce switching or microwave oscillations of the magnetization. Significant efforts have been devoted to the explanation of these results, in view of the new physics involved and of the possible applications to new types of current-controlled memory cells or microwave sources and resonators . However, the precise nature of magnetization dynamics when spin-polarized currents and external magnetic fields are simultaneously present has not yet been fully understood. The spin-transfer-driven nanomagnet is a nonlinear open system that is forced far from equilibrium by the injection of the current. Thus, the appropriate framework for the study of the problem is nonlinear dynamical system theory and bifurcation theory. In this talk, it is shown that within this framework the complexity and subtlety of spin-torque effects are fully revealed and quantified, once it is recognized that both intrinsic damping and spin transfer can be treated as perturbations of the free precessional dynamics typical of ferromagnetic resonance. Complete stability diagrams are derived for the case where spin torques and external magnetic fields are simultaneously present. Quantitative predictions are made for the critical currents and fields inducing magnetization switching; for the amplitude and frequency of magnetization self-oscillations; for the conditions leading to hysteretic transitions between self-oscillations and stationary states

A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

Science.gov (United States)

Chien, Wei-Chih; Chen, Yi-Chou; Lee, Feng-Ming; Lin, Yu-Yu; Lai, Erh-Kun; Yao, Yeong-Der; Gong, Jeng; Horng, Sheng-Fu; Yeh, Chiao-Wen; Tsai, Shih-Chang; Lee, Ching-Hsiung; Huang, Yu-Kai; Chen, Chun-Fu; Kao, Hsiao-Feng; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Lu, Chih-Yuan

2011-04-01

The behavior of WOX resistive random access memory (ReRAM) is a strong function of the top electrode material, which controls the conduction mechanism and the forming process. When using a top electrode with low work function, the current conduction is limited by space charges. On the other hand, the mechanism becomes thermionic emission for devices with a high work function top electrode. These (thermionic) devices are also found to have higher initial resistance, reduced forming current, and larger resistance window. Based on these insights and considering the compatibility to complementary metal-oxide-semiconductor (CMOS) process, we proposed to use Ni as the top electrode for high performance WOX ReRAM devices. The new Ni/WOX/W device can be switched at a low current density less than 8×105 A/cm2, with RESET/SET resistance ratio greater than 100, and extremely good data retention of more than 300 years at 85 °C.

Frequency-Controlled Current-Fed Resonant Converter with No Input Ripple Current

Directory of Open Access Journals (Sweden)

Bor-Ren Lin

2018-02-01

Full Text Available This paper studies a frequency-controlled current-fed resonant circuit. The adopted direct current (DC-to-DC converter contains two boost circuits and a resonant circuit on the primary side. First, two boost circuits are connected in parallel to achieve voltage step-up and reduce input ripple current by using interleaved pulse-width modulation. Therefore, the size and current rating of boost inductors are decreased in the proposed converter. Second, the boost voltage is connected to the resonant circuit to realize the mechanism of the zero-voltage switching of all active switches and zero-current switching of all diodes. Two boost circuits and a resonant circuit use the same power devices in order to lessen the switch counts. The voltage doubler topology is adopted on the secondary side (high-voltage side. Therefore, the voltage rating of diodes on the high-voltage side is clamped at output voltage. The feasibility of the studied circuit is confirmed by the experimental tests with a 1 kW prototype circuit.

Development of Digital Hysteresis Current Control with PLL Loop Gain Compensation Strategy for PWM Inverters with Constant Switching Frequency

Directory of Open Access Journals (Sweden)

N. Belhaouchet

2008-03-01

Full Text Available Hysteresis current control is one of the simplest techniques used to control the magnitude and phase angle of motor current for motor drives systems. However, this technique presents several disadvantages such as operation at variable switching frequency which can reveal problems of filtering, interference between the phases in the case of the three-phase systems with insulated neutral connection or delta connection, and irregularity of the modulation pulses which especially causes an acoustic noise on the level of the machine for the high power drive. In this paper, a new technique is proposed for a variable-hysteresis-band controller based on dead beat control applied to three phase voltage source PWM inverters feeding AC motors. Its main aim is firstly ensure a constant switching frequency and secondly the synchronization of modulation pulses using the phase-locked-loop with loop gain compensation in order to ensure a better stability. The behavior of the proposed technique is verified by simulation.

High Current, Low Voltage Power Converter [20kA, 6V] LHC Converter Prototype

CERN Document Server

Jørgensen, H E; Dupaquier, A; Fernqvist, G

1998-01-01

The superconducting LHC accelerator requires high currents (~12.5kA) and relatively low voltages (~10 V) for its magnets. The need to install the power converters underground is the driving force for reduced volume and high efficiency. Moreover, the LHC machine will require a very high level of performance from the power converters, particularly in terms of DC stability, dynamic response and also in matters of EMC. To meet these requirements soft-switching techniques will be used. This paper describes the development of a [20kA,6V] power converter intended as a stable high-current source for D CCT calibration and an evaluation prototype for the future LHC converters. The converter is made with a modular concept with five current sources [4kA,6V] in parallel. The 4kA sources are built as plu g-in modules: a diode rectifier on the AC mains with a damped L-C passive filter, a Zero Voltage Switching inverter working at 20 kHz and an output stage (high frequency transformers, Schottky rectifi ers and output filter...

Rotor position sensor switches currents in brushless dc motors

Science.gov (United States)

1965-01-01

Reluctance switch incorporated in an induction motor is used for sensing rotor position and switching armature circuits in a brushless dc motor. This device drives the solar array system of an unmanned space satellite.

State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

Science.gov (United States)

Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

2018-03-01

The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

Design and development of bipolar 4-quadrant switch-mode power converter for superconducting magnets

International Nuclear Information System (INIS)

Yashwant Kumar; Thakur, S.K.; Ghosh, M.K.; Tiwari, T.P.; De, Anirban; Kumari, S.; Saha, S.

2011-01-01

A uniform zero crossing magnetic field in a magnet can be achieved by using bipolar power converter with four quadrant operation. A high current bipolar switch-mode power converter (rated ±27 V max , ±7V flat top, ±300A, 100 ppm) has been designed and developed indigenously at VECC Kolkata. Four quadrants operation is accomplished by using power IGBTs in an H-bridge configuration with switching frequency around 20 kHz. The switch-mode power converter is used because of high dynamic response, low output ripple, high efficiency and low input current harmonics. In this paper, circuit topology, function of system components and key system specifications of high current bipolar switch mode power converter is discussed. (author)

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

Science.gov (United States)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

New solid state opening switches for repetitive pulsed power technology

Energy Technology Data Exchange (ETDEWEB)

Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics

1997-12-31

In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.

Pulsed power opening switch research at the University of New Mexico

International Nuclear Information System (INIS)

Humphries, S. Jr.

1987-01-01

Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (--10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible

Plasma flow switch characterization for the Los Alamos Foil Implosion Project

International Nuclear Information System (INIS)

Bowers, R.L.; Brownell, J.H.; Greene, A.E.; Peterson, D.L.

1990-01-01

The next system design under consideration for the Los Alamos Foil Implosion Project is projected to deliver tens of mega-amperes of electrical current produced by high-explosive driven flux compression generators on a time scale of about one microsecond to a load foil. The use of such generators, with time scales of order several tenths of a millisecond, leads to considerable pulse shaping problems. Previously it was noted that a commutating switch might serve as an efficient alternative to a closing switch in transferring current from a coaxial transmission line to a cylindrically imploding load. Research at the Air Force Weapons Laboratory (AFWL) has met with considerable success in efficiently transferring currents of order 10 MA to an imploding liner using the plasma flow switch concept (PFS). Besides efficiently transferring current, the plasma flow switch protects the load region from high voltages generated by an opening switch until the current is present to provide magnetic insulation. For these reasons, a PFS is being investigated as the final pulse shaping step in the design. A series of capacitor bank experiments is also being fielded to help investigate physics issues and to benchmark the codes

Theoretical investigation of a photoconductively switched high-voltage spark gap

NARCIS (Netherlands)

Broks, B.H.P.; Hendriks, J.; Brok, W.J.M.; Brussaard, G.J.H.; Mullen, van der J.J.A.M.

2006-01-01

In this contribution, a photoconductively switched high-voltage spark gap with an emphasis on theswitching behavior is modeled. It is known experimentally that not all of the voltage that is present at the input of the spark gap is switched, but rather a fraction of it drops across the spark gap.

Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

International Nuclear Information System (INIS)

Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

2011-01-01

The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

MHz repetition rate solid-state driver for high current induction accelerators

International Nuclear Information System (INIS)

Brooksby, C; Caporaso, G; Goerz, D; Hanks, R; Hickman, B; Kirbie, H; Lee, B; Saethre, R.

1999-01-01

A research team from the Lawrence Livermore National Laboratory and Bechtel Nevada Corporation is developing an all solid-state power source for high current induction accelerators. The original power system design, developed for heavy-ion fusion accelerators, is based on the simple idea of using an array of field effect transistors to switch energy from a pre-charged capacitor bank to an induction accelerator cell. Recently, that idea has been expanded to accommodate the greater power needs of a new class of high-current electron accelerators for advanced radiography. For this purpose, we developed a 3-stage induction adder that uses over 4,000 field effect transistors to switch peak voltages of 45 kV at currents up to 4.8 kA with pulse repetition rates of up to 2 MHz. This radically advanced power system can generate a burst of five or more pulses that vary from 200 ns to 2 ampersand micro;s at a duty cycle of up to 25%. Our new source is precise, robust, flexible, and exceeds all previous drivers for induction machines by a factor of 400 in repetition rate and a factor of 1000 in duty cycle

Intrinsic nanofilamentation in resistive switching

KAUST Repository

Wu, Xing

2013-03-15

Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

Science.gov (United States)

Weinelt, Martin; von Oppen, Felix

2012-10-01

In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on

Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit

International Nuclear Information System (INIS)

Rumyantsev, S L; Levinshtein, M E; Saxena, T; Shur, M S; Cheng, L; Palmour, J W; Agarwal, A

2014-01-01

Optical switch-on of a very high voltage (18 kV class) 4H-SiC thyristor with an amplification step (pilot thyristor) to the current I max  = 1225 A is demonstrated using a purely inductive load and a calibrated air transformer. Increasing the inductance of the transformer primary winding slows down the turn on process. However, the inductance has little effect during the initial stage of the switch-on process when the voltage drop on the thyristor and its internal resistance is high. The results show that a further switch-on current increase can be only achieved by introducing additional amplification steps in the pilot thyristor. (paper)

High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

Directory of Open Access Journals (Sweden)

M. Drinovsky

2015-12-01

Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

Science.gov (United States)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Performance of highly connected photonic switching lossless metro-access optical networks

Science.gov (United States)

Martins, Indayara Bertoldi; Martins, Yara; Barbosa, Felipe Rudge

2018-03-01

The present work analyzes the performance of photonic switching networks, optical packet switching (OPS) and optical burst switching (OBS), in mesh topology of different sizes and configurations. The "lossless" photonic switching node is based on a semiconductor optical amplifier, demonstrated and validated with experimental results on optical power gain, noise figure, and spectral range. The network performance was evaluated through computer simulations based on parameters such as average number of hops, optical packet loss fraction, and optical transport delay (Am). The combination of these elements leads to a consistent account of performance, in terms of network traffic and packet delivery for OPS and OBS metropolitan networks. Results show that a combination of highly connected mesh topologies having an ingress e-buffer present high efficiency and throughput, with very low packet loss and low latency, ensuring fast data delivery to the final receiver.

Switching dynamics of TaOx-based threshold switching devices

Science.gov (United States)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

Energy Technology Data Exchange (ETDEWEB)

Guo, Jiquan [Stanford Univ., CA (United States)

2008-12-01

In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2005-01-01

This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

Science.gov (United States)

Gu, Lei; Fu, Hua-Hua

2015-12-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

International Nuclear Information System (INIS)

Gu, Lei; Fu, Hua-Hua

2015-01-01

Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

Polyaniline-based memristive microdevice with high switching rate and endurance

Science.gov (United States)

Lapkin, D. A.; Emelyanov, A. V.; Demin, V. A.; Erokhin, V. V.; Feigin, L. A.; Kashkarov, P. K.; Kovalchuk, M. V.

2018-01-01

Polyaniline (PANI) based memristive devices have emerged as promising candidates for hardware implementation of artificial synapses (the key components of neuromorphic systems) due to their high flexibility, low cost, solution processability, three-dimensional stacking capability, and biocompatibility. Here, we report on a way of the significant improvement of the switching rate and endurance of PANI-based memristive devices. The reduction of the PANI active channel dimension leads to the increase in the resistive switching rate by hundreds of times in comparison with the conventional one. The miniaturized memristive device was shown to be stable within at least 104 cyclic switching events between high- and low-conductive states with a retention time of at least 103 s. The obtained results make PANI-based memristive devices potentially widely applicable in neuromorphic systems.

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver

International Nuclear Information System (INIS)

Xu Jian; Zhou Zheng; Wu Yiqiang; Wang Zhigong; Chen Jianping

2015-01-01

A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB receiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter (FBMOCCII), which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be removed, which simplifies the design considerably. The design is verified with a SMIC 0.18 μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 V. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers. (paper)

Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

Science.gov (United States)

Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

2014-08-01

Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

Photoconductive switch enhancements for use in Blumlein pulse generators

International Nuclear Information System (INIS)

Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

1999-01-01

Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed

Light-driven molecular current switch

Czech Academy of Sciences Publication Activity Database

Nešpůrek, Stanislav; Toman, Petr; Sworakowski, J.; Lipinski, J.

2002-01-01

Roč. 2, č. 4 (2002), s. 299-304 ISSN 1567-1739. [Multilateral Symposium between the Korean Academy of Science and Technology and the Foreign Academies. Seoul, 08.05.2002-10.05.2002] R&D Projects: GA AV ČR IAA1050901 Grant - others:GA-(PL) 4T09A 13222 Institutional research plan: CEZ:AV0Z4050913 Keywords : molecular switch * molecular electronics * charge transport Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.117, year: 2002

Progress in switching technology for METS systems

International Nuclear Information System (INIS)

Honig, E.M.; Swannack, C.E.; Warren, R.W.; Whitaker, D.H.

1977-01-01

Three distinct sets of switching requirements have emerged from design optimization studies of large superconducting magnetic energy storage systems, such as the METS system to power the adiabatic plasma compression field in the proposed theta-pinch SFTR. Extremely low joule loss cryogenic disconnects are required between storage coils in the liquid helium environment to allow charging the coils in series over a prolonged time, then to isolate the coils for parallel fast discharging into the load. Another switch must break the current in the series charging loop and absorb the energy from the stray inductance. This action will allow the subsequent opening of the cryogenic disconnects under near zero current condition. The current now has been transferred to the many paralleled circuits, each containing a high current, high voltage interrupter. The opening and arc commutation of the interrupter starts the energy transfer into the load. The primary activities associated with cryogenic disconnect have been testing and development of contact materials, configurations, and closing forces for carrying 26 kA with a resistance less than 40 nΩ, and development of an actuating system that is both reliable and fast acting in a liquid helium environment. The charging loop switch will include a continuous duty switch and a vacuum interrupter. The continuous duty switch resistance can be an order of magnitude larger than that of the cryogenic disconnect because it does not present a refrigeration load. The HVDC interrupter must break 26 kA and withstand 60 kV during the energy transfer time of 700 μs. Testing in progress already has shown successful interruption using single vacuum interrupters up to 31 kA and 66 kV

Resistive switching behavior of SiOx layers with Si nanoparticles

International Nuclear Information System (INIS)

Nesheva, D; Pantchev, B; Manolov, E; Dzhurkov, V; Nedev, N; Valdez, B; Nedev, R

2017-01-01

First results on resistive switching in SiO x film containing crystalline silicon nanoparticles are reported. SiO x layers ( x = 1.15) with thickness of 50 nm were deposited on n-Si crystalline substrates and annealed for 60 min at 1000 o C to grow crystalline nanoparticles. Part of the samples were annealed in an inert atmosphere, while the rest were subjected to a two-step (O 2 +N 2 /N 2 ) annealing process. Current-voltage (I-V) characteristics were by applying positive or negative voltage to the top contact. For both types of samples the I-V characteristics were asymmetric with lower currents measured at negative voltage, especially in the case of two-step annealed samples. In most of the N 2 annealed structures switching behavior high-low/low-high resistance state was observed in both polarities at voltages with amplitudes in the range (2 - 4) V. Uncontrolled switching low/high resistance was also seen, more frequently at positive voltages. In contrast, the two-step annealed samples showed stable behavior. The transition high-low resistance state was achieved by negative voltages in the (-2, -5) V range leading to an increase of the current by more than three orders of magnitude. The structures were reset to the high resistive state, by positive voltage in the range (3 - 4) V. Uncontrolled switching was not observed in the two-step annealed samples for both polarities and they showed higher reliability regarding the number of switching cycles. (paper)

Switched-capacitor isolated LED driver

Science.gov (United States)

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

International Nuclear Information System (INIS)

Kyuregyan, A. S.

2015-01-01

A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

Plasma-ring, fast-opening switch

International Nuclear Information System (INIS)

Hartman, C.W.; Eddleman, J.; Hammer, J.H.

1986-01-01

The authors discuss a fast-opening switch concept based on magnetically confined plasma rings, PROS (for Plasma Ring Opening Switch). In PROS, the plasma ring, confined by Bθ /sub and B/poloidal /sub fields of a compact torus, provide a low mass, localized conduction path between coaxial electrodes. To operate the switch, driver current is passed across the electrodes through the ring, storing inductive energy in external inductance and between the electrodes on the driver side of the ring. The ring is accelerated away from the driver by the field of the driver current and passes over a load gap transferring the current to the load. The authors distinguish two configurations in PROS, straight PROS where the electrodes are coaxial cylinders, and cone PROS with conical electrodes. In straight PROS ring acceleration takes place during the inductive store period as in foil switches, but with the localized ring providing the current path. Increased performance is predicted for the cone PROS (see figure) which employs compression of the ring in the cone during the inductive store period. Here, the B/θ /sub field of the driver forces the ring towards the apex of the cone but the force is in near balance with the opposing component of the radial equilibrium force of the ring along the cone. As a result, the ring undergoes a slow, quasistatic compression limited only by resistive decay of the ring field. Slow compression allows inductive storage with low-power drivers (homopoloar, magneto cumulative generators, high C-low V capacitor banks, etc.). Near the apex of the cone, near peak compression, the ring is allowed to enter a straight coaxial section where, because of low-mass, it rapidly accelerates to high velocity and crosses the load gap

Active high-power RF pulse compression using optically switched resonant delay lines

International Nuclear Information System (INIS)

Tantawi, S.G.; Ruth, R.D.; Vlieks, A.E.

1996-11-01

The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE 01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability

Switch evaluation test system for the National Ignition Facility

International Nuclear Information System (INIS)

Savage, M.E.; Simpson, W.W.; Reynolds, F.D.

1997-01-01

Flashlamp pumped lasers use pulsed power switches to commute energy stored in capacitor banks to the flashlamps. The particular application in which the authors are interested is the National Ignition Facility (NIF), being designed by Lawrence Livermore National Laboratory, Los Alamos National Laboratory, and Sandia National Laboratories (SNL). To lower the total cost of these switches, SNL has a research program to evaluate large closing switches. The target value of the energy switched by a single device is 1.6 MJ, from a 6 mF, 24kV capacitor bank. The peak current is 500 kA. The lifetime of the NIF facility is 24,000 shots. There is no switch today proven at these parameters. Several short-lived switches (100's of shots) exist that can handle the voltage and current, but would require maintenance during the facility life. Other type devices, notably ignitrons, have published lifetimes in excess of 20,000 shots, but at lower currents and shorter pulse widths. The goal of the experiments at SNL is to test switches with the full NIF wave shape, and at the correct voltage. The SNL facility can provide over 500 kA at 24 kV charge voltage. the facility has 6.4 mF total capacitance, arranged in 25 sub-modules. the modular design makes the facility more flexible (for possible testing at lower current) and safer. For pulse shaping (the NIF wave shape is critically damped) there is an inductor and resistor for each of the 25 modules. Rather than one large inductor and resistor, this lowers the current in the pulse shaping components, and raises their value to those more easily attained with lumped inductors and resistors. The authors show the design of the facility, and show results from testing conducted thus far. They also show details of the testing plan for high current switches

Methods of high current magnetic field generator for transcranial magnetic stimulation application

Science.gov (United States)

Bouda, N. R.; Pritchard, J.; Weber, R. J.; Mina, M.

2015-05-01

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/-20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG1) and MOSFET circuits (HCMFG2) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Coulomb Blockade Plasmonic Switch.

Science.gov (United States)

Xiang, Dao; Wu, Jian; Gordon, Reuven

2017-04-12

Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

A novel high voltage start up circuit for an integrated switched mode power supply

Energy Technology Data Exchange (ETDEWEB)

Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

Science.gov (United States)

Kayiranga, Thierry

Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system

High frequency modulation circuits based on photoconductive wide bandgap switches

Science.gov (United States)

Sampayan, Stephen

2018-02-13

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

Uv laser triggering of high-voltage gas switches

International Nuclear Information System (INIS)

Woodworth, J.R.; Frost, C.A.; Green, T.A.

1982-01-01

Two different techniques are discussed for uv laser triggering of high-voltage gas switches using a KrF laser (248 nm) to create an ionized channel through the dielectric gas in a spark gap. One technique uses an uv laser to induce breakdown in SF 6 . For this technique, we present data that demonstrate a 1-sigma jitter of +- 150 ps for a 0.5-MV switch at 80% of its self-breakdown voltage using a low-divergence KrF laser. The other scheme uses additives to the normal dielectric gas, such as tripropylamine, which are selected to undergo resonant two-step ionization in the uv laser field

RF-MEMS capacitive switches with high reliability

Science.gov (United States)

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

Science.gov (United States)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

International Nuclear Information System (INIS)

Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

2016-01-01

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

Science.gov (United States)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

High current, 0.5-MA, fast, 100-ns, linear transformer driver experiments

Directory of Open Access Journals (Sweden)

Michael G. Mazarakis

2009-05-01

Full Text Available The linear transformer driver (LTD is a new method for constructing high current, high-voltage pulsed accelerators. The salient feature of the approach is switching and inductively adding the pulses at low voltage straight out of the capacitors through low inductance transfer and soft iron core isolation. Sandia National Laboratories are actively pursuing the development of a new class of accelerator based on the LTD technology. Presently, the high current LTD experimental research is concentrated on two aspects: first, to study the repetition rate capabilities, reliability, reproducibility of the output pulses, switch prefires, jitter, electrical power and energy efficiency, and lifetime measurements of the cavity active components; second, to study how a multicavity linear array performs in a voltage adder configuration relative to current transmission, energy and power addition, and wall plug to output pulse electrical efficiency. Here we report the repetition rate and lifetime studies performed in the Sandia High Current LTD Laboratory. We first utilized the prototype ∼0.4-MA, LTD I cavity which could be reliably operated up to ±90-kV capacitor charging. Later we obtained an improved 0.5-MA, LTD II version that can be operated at ±100  kV maximum charging voltage. The experimental results presented here were obtained with both cavities and pertain to evaluating the maximum achievable repetition rate and LTD cavity performance. The voltage adder experiments with a series of double sized cavities (1 MA, ±100  kV will be reported in future publications.

Switching power converters medium and high power

CERN Document Server

Neacsu, Dorin O

2013-01-01

An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

The influence of the inverter switching frequency on rotor losses in high-speed permanent magnet machines : an experimental study

NARCIS (Netherlands)

Merdzan, M.; Paulides, J. J H; Borisavljevic, A.; Lomonova, E. A.

2016-01-01

Harmonic content of the output voltage of pulse width modulated voltage source inverters (PWM VSI) is determined by the switching frequency. On the other hand, rotor losses in high-speed permanent magnet (PM) machines are caused, among other factors, by harmonics in stator currents. These harmonics

Methods of high current magnetic field generator for transcranial magnetic stimulation application

International Nuclear Information System (INIS)

Bouda, N. R.; Pritchard, J.; Weber, R. J.; Mina, M.

2015-01-01

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/−20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG 1 ) and MOSFET circuits (HCMFG 2 ) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed

Methods of high current magnetic field generator for transcranial magnetic stimulation application

Energy Technology Data Exchange (ETDEWEB)

Bouda, N. R., E-mail: nybouda@iastate.edu; Pritchard, J.; Weber, R. J.; Mina, M. [Department of Electrical and Computer engineering, Iowa State University, Ames, Iowa 50011 (United States)

2015-05-07

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/−20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG{sub 1}) and MOSFET circuits (HCMFG{sub 2}) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Protection and switching system for the RFX power supply

International Nuclear Information System (INIS)

Browning, J.L.; Gray, J.W.; Mace, T.A.; Varley, G.L.

1986-01-01

The RFX toroidal field power supply comprises a large 4.8MJ (max) modular capacitor bank and four 14MW AC/DC converter flat-top power supply modules. The high fault level associated with the capacitor banks presents a problem in the design of the switching system, since mistiming could produce large currents in the flat-top supplies. The poloidal circuit consists of four groups of magnetising windings connected in series, each with its own flat-top convertor supply and opening switch transfer system. The flat-top converter supplies are needed when the transfer voltage has fallen from approximately 40kV to 1kV. Solutions to the problem of designing a fault-tolerant system which presents no danger to the flat-top converters are described in the paper. The adopted methods make use of hybrid ignitron/mechanical switches to give the required combination of switching speed and current carrying capacity, together with careful attention to the circuit layout of different switching elements. (author)

Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

International Nuclear Information System (INIS)

Pan, R.K.; Zhang, T.J.; Wang, J.Y.; Wang, J.Z.; Wang, D.F.; Duan, M.G.

2012-01-01

The 80-nm-thickness BaTiO 3 (BT) thin film was prepared on the Pt/Ti/SiO 2 /Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO 2 /Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current–voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current–voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole–Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. - Highlights: ►Pt/BaTiO 3 /Pt cell shows the bipolar resistive switching behavior. ►The current–voltage curves were well fitted for different conduction mechanisms. ►The electroforming and switching processes were explained.

Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

Directory of Open Access Journals (Sweden)

G. A. Nemnes

2012-01-01

Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

Science.gov (United States)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Fundamental studies on the switching in liquid nitrogen environment using vacuum switches for application in future high-temperature superconducting medium-voltage power grids

International Nuclear Information System (INIS)

Golde, Karsten

2016-01-01

By means of superconducting equipment it is possible to reduce the transmission losses in distribution networks while increasing the transmission capacity. As a result even saving a superimposed voltage level would be possible, which can put higher investment costs compared to conventional equipment into perspective. For operation of superconducting systems it is necessary to integrate all equipment in the cooling circuit. This also includes switchgears. Due to cooling with liquid nitrogen, however, only vacuum switching technology comes into question. Thus, the suitability of vacuum switches is investigated in this work. For this purpose the mechanics of the interrupters is considered first. Material investigations and switching experiments at ambient temperature and in liquid nitrogen supply information on potential issues. For this purpose, a special pneumatic construction is designed, which allows tens of thousands of switching cycles. Furthermore, the electrical resistance of the interrupters is considered. Since the contact system consists almost exclusively of copper, a remaining residual resistance and appropriate thermal losses must be considered. Since they have to be cooled back, an appropriate evaluation is given taking environmental parameters into account. The dielectric strength of vacuum interrupters is considered both at ambient temperature as well as directly in liquid nitrogen. For this purpose different contact distances are set at different interrupter types. A distinction is made between internal and external dielectric strength. Conditioning and deconditioning effects are minimized by an appropriate choice of the test circuit. The current chopping and resulting overvoltages are considered to be one of the few drawbacks of vacuum switching technology. Using a practical test circuit the height of chopping current is determined and compared for different temperatures. Due to strong scattering the evaluation is done using statistical methods. At

Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

Science.gov (United States)

Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

2013-02-01

For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

High Current Planar Transformer for Very High Efficiency Isolated Boost DC-DC Converters

DEFF Research Database (Denmark)

Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac-resistance a......This paper presents a design and optimization of a high current planar transformer for very high efficiency dc-dc isolated boost converters. The analysis considers different winding arrangements, including very high copper thickness windings. The analysis is focused on the winding ac......-resistance and transformer leakage inductance. Design and optimization procedures are validated based on an experimental prototype of a 6 kW dcdc isolated full bridge boost converter developed on fully planar magnetics. The prototype is rated at 30-80 V 0-80 A on the low voltage side and 700-800 V on the high voltage side...... with a peak efficiency of 97.8% at 80 V 3.5 kW. Results highlights that thick copper windings can provide good performance at low switching frequencies due to the high transformer filling factor. PCB windings can also provide very high efficiency if stacked in parallel utilizing the transformer winding window...

High repetition rate, high energy, actively Q-switched all-in-fiber laser

Science.gov (United States)

Lecourt, J. B.; Bertrand, A.; Guillemet, S.; Hernandez, Y.; Giannone, D.

2010-05-01

We report an actively Q-switched Ytterbium-doped all-in-fibre laser delivering 10ns pulses with high repetition rate (from 100kHz to 1MHz). The laser operation has been validated at three different wavelengths (1040, 1050 and 1064nm). The laser can deliver up to 20Watts average power with an high beam quality (M2 = 1).

High-power electro-optic switch technology based on novel transparent ceramic

International Nuclear Information System (INIS)

Zhang Xue-Jiao; Ye Qing; Qu Rong-Hui; Cai Hai-wen

2016-01-01

A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. (paper)

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Science.gov (United States)

Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

2017-07-01

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

Science.gov (United States)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Reluctance motor employing superconducting magnetic flux switches

International Nuclear Information System (INIS)

Spyker, R.L.; Ruckstadter, E.J.

1992-01-01

This paper reports that superconducting flux switches controlling the magnetic flux in the poles of a motor will enable the implementation of a reluctance motor using one central single phase winding. A superconducting flux switch consists of a ring of superconducting material surrounding a ferromagnetic pole of the motor. When in the superconducting state the switch will block all magnetic flux attempting to flow in the ferromagnetic core. When switched to the normal state the superconducting switch will allow the magnetic flux to flow freely in that pole. By using one high turns-count coil as a flux generator, and selectively channeling flux among the various poles using the superconducting flux switch, 3-phase operation can be emulated with a single-hase central AC source. The motor will also operate when the flux generating coil is driven by a DC current, provided the magnetic flux switches see a continuously varying magnetic flux. Rotor rotation provides this varying flux due to the change in stator pole inductance it produces

Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

Energy Technology Data Exchange (ETDEWEB)

Kyuregyan, A. S., E-mail: ask@vei.ru [Lenin All-Russia Electrical Engineering Institute (Russian Federation)

2015-07-15

A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

Modeling, Simulation, and Experiment of Switched Reluctance Ocean Current Generator System

Directory of Open Access Journals (Sweden)

Hao Chen

2013-01-01

Full Text Available This paper presents nonlinear simulation model of switched reluctance (SR ocean current generator system on MATLAB/SIMULINK with describing the structure of generator system. The developed model is made up of main model, rotor position calculation module, controller module, gate module, power converter module, phase windings module, flux-linkage module, torque module, and power calculation module. The magnetization curves obtained by two-dimensional finite-element electromagnetic field calculation and the conjugated magnetic energy graphics obtained from the three-dimensional graphics of flux linkage are stored in the “Lookup Table” modules on MATLAB/SIMULINK. The hardware of the developed three-phase 12/8 structure SR ocean current generator system prototype with the experimental platform is presented. The simulation of the prototype is performed by the developed models, and the experiments have been carried out under the same condition with different output power, turn-off angle, and rotor speed. The simulated phase current waveforms agree well with the tested phase current waveforms experimentally. The simulated output voltage curves agree well with the tested output voltage curves experimentally. It is shown that the developed nonlinear simulation model of the three-phase 12/8 structure SR ocean current generator system is valid.

A solid-state dielectric elastomer switch for soft logic

Energy Technology Data Exchange (ETDEWEB)

Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

2016-03-07

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

A solid-state dielectric elastomer switch for soft logic

International Nuclear Information System (INIS)

Chau, Nixon; Slipher, Geoffrey A.; Mrozek, Randy A.; O'Brien, Benjamin M.; Anderson, Iain A.

2016-01-01

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

Low-leakage, high-current power crowbar transformer

International Nuclear Information System (INIS)

Buck, R.T.; Galbraith, J.D.; Nunnally, W.C.

1979-01-01

The design, fabrication, and testing of two sizes of power crowbar transformers for the ZT-40 Toroidal Z-Pinch experiment at the Los Alamos Scientific Laboratory are described. Low-leakage transformers in series with the poloidal and the toroidal field coils are used to sustain magnetic field currents initially produced by 50-kV capacitor banks. The transformer primaries are driven by cost-effective, ignitron-switched, 10-kV high-density capacitor banks. The transformer secondaries, in series with the field coils, provide from 1,000 to 1,500 V to cancel the resistive voltage drop in the coil circuits. Prototype transformers, with a total leakage inductance measured in the secondary of 5 nH, have been tested with peak secondary currents in excess of 600 kA resulting from a 10-kV primary charge voltage. The test procedures and results and the mechanical construction details are presented

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Energy Technology Data Exchange (ETDEWEB)

Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2016-06-28

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

Science.gov (United States)

Kasparek, W.; Petelin, M. I.; Shchegolkov, D. Yu; Erckmann, V.; Plaum, B.; Bruschi, A.; ECRH Groups at IPP Greifswald; Karlsruhe, FZK; Stuttgart, IPF

2008-05-01

A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented.

A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

International Nuclear Information System (INIS)

Kasparek, W.; Plaum, B.; Petelin, M.I.; Shchegolkov, D.Yu; Erckmann, V.; Bruschi, A.

2008-01-01

A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Science.gov (United States)

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

The Transistor as Low Level Switch

Energy Technology Data Exchange (ETDEWEB)

Lyden, Anders

1963-10-15

The common collector transistor switch has in the on state with open emitter a certain offset voltage U{sub EK} {approx_equal} -kT/qB{sub N}. This expression is derived in a new, more physical way. It is further shown at which emitter current the current amplification factor B{sub N} should be measured to get a correct value for the above expression. The collector current I at zero collector voltage I{sub K} = I{sub 0}(exp(qU{sub E}/kT) - 1) extremely well. Substitution of I{sub EBO} and I{sub KBO} by I{sub 0} in Eber's and Moll's relations consequently improves these equations and the characteristics of the transistor switch can be better determined. At switching on and off transients appear across the switch. The influence of the 'spike' at switching off can be described by an current I{sub SPIKE} which is easy to calculate. I{sub SPIKE} is approximately dependent only on the base - emitter depletion layer capacitance and the chopper frequency f{sub 0}. Some compensated switches have lower drift than the drift in U{sub EK}. They may, for example, have a temperature drift < 0.2 {mu}V/deg C and a long time drift < 2 {mu}V/week. Some compensated switches also have I{sub SPIKE} < 10{sup -12} f{sub 0}A. The static offset current in the off state can easily be made < 10{sup -12} A.

A CW Gunn diode bistable switching element.

Science.gov (United States)

Hurtado, M.; Rosenbaum, F. J.

1972-01-01

Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

The Application of High Temperature Superconducting Materials to Power Switches

CERN Document Server

March, S A; Ballarino, A

2009-01-01

Superconducting switches may find application in superconducting magnet systems that require energy extraction. Such superconducting switches could be bypass-switches that are operated in conjunction with a parallel resistor or dump-switches where all of the energy is dissipated in the switch itself. Bypass-switches are more suited to higher energy circuits as a portion of the energy can be dissipated in the external dump resistor. Dump- switches require less material and triggering energy as a lower switch resistance is needed to achieve the required total dump resistance. Both superconducting bypass-switches and superconducting dump-switches can be ther- mally activated. Switching times that are comparable to those obtained with mechanical bypass-switch systems can be achieved using a co-wound heater that is powered by a ca- pacitor discharge. Switches that have fast thermal diffusion times through the insulation can be modelled as a lumped system whereas those with slow thermal diffusion times were modelle...

Measurement of resistance switching dynamics in copper sulfide memristor structures

Science.gov (United States)

McCreery, Kaitlin; Olson, Matthew; Teitsworth, Stephen

Resistance switching materials are the subject of current research in large part for their potential to enable novel computing devices and architectures such as resistance random access memories and neuromorphic chips. A common feature of memristive structures is the hysteretic switching between high and low resistance states which is induced by the application of a sufficiently large electric field. Here, we describe a relatively simple wet chemistry process to fabricate Cu2 S / Cu memristive structures with Cu2 S film thickness ranging up to 150 micron. In this case, resistance switching is believed to be mediated by electromigration of Cu ions from the Cu substrate into the Cu2 S film. Hysteretic current-voltage curves are measured and reveal switching voltages of about 0.8 Volts with a relatively large variance and independent of film thickness. In order to gain insight into the dynamics and variability of the switching process, we have measured the time-dependent current response to voltage pulses of varying height and duration with a time resolution of 1 ns. The transient response consists of a deterministic RC component as well as stochastically varying abrupt current steps that occur within a few microseconds of the pulse application.

Preliminary experiment research of explosively driven opening switch

International Nuclear Information System (INIS)

Li Xiaolin; Chen Dongqun; Li Da; Cao Shengguang; Chen Yingcong

2010-01-01

In pulse power technology field, many loads require high current pulse with fast risetime, but sometimes, the common high current pulse powers don't satisfy request, thus there need pulse erection switches of sorts to shorten pulse risetime. Explosively driven opening switch (EDOS) is a good choice, it has simple structure and excellent performance, the primary parameters of EDOS are opening time, opening resistance, opening current and dissipation energy, which determine its performance and range for applications. For this, two kinds of EDOS are designed and manufactured, in the later experiments, the power supply is a 200 μF capacitor and the conductor is 0.03 mm copper foil, the results indicate that the two kinds of EDOS have good performance, the opening time is about 1-3 μs, the opening resistance is about 1-2 Ω, the opening current is about 24-31 kA and the average dissipation energy is about 0.125-0.34 kJ per groove, the capability of conduction current is adjusted by the thickness of conductor along with different opening current. (authors)

Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

KAUST Repository

Mayet, Abdulilah M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2015-01-01

© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

KAUST Repository

Mayet, Abdulilah M.

2015-12-04

© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Compact, Energy-Efficient High-Frequency Switched Capacitor Neural Stimulator With Active Charge Balancing.

Science.gov (United States)

Hsu, Wen-Yang; Schmid, Alexandre

2017-08-01

Safety and energy efficiency are two major concerns for implantable neural stimulators. This paper presents a novel high-frequency, switched capacitor (HFSC) stimulation and active charge balancing scheme, which achieves high energy efficiency and well-controlled stimulation charge in the presence of large electrode impedance variations. Furthermore, the HFSC can be implemented in a compact size without any external component to simultaneously enable multichannel stimulation by deploying multiple stimulators. The theoretical analysis shows significant benefits over the constant-current and voltage-mode stimulation methods. The proposed solution was fabricated using a 0.18 μm high-voltage technology, and occupies only 0.035 mm 2 for a single stimulator. The measurement result shows 50% peak energy efficiency and confirms the effectiveness of active charge balancing to prevent the electrode dissolution.

High-power electro-optic switch technology based on novel transparent ceramic

Science.gov (United States)

Xue-Jiao, Zhang; Qing, Ye; Rong-Hui, Qu; Hai-wen, Cai

2016-03-01

A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. Project supported by the National Natural Science Foundation of China (Grant Nos. 61137004, 61405218, and 61535014).

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

Science.gov (United States)

Cooper, James A.

1986-01-01

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

High resolution switching mode inductance-to-frequency converter with temperature compensation.

Science.gov (United States)

Matko, Vojko; Milanović, Miro

2014-10-16

This article proposes a novel method for the temperature-compensated inductance-to-frequency converter with a single quartz crystal oscillating in the switching oscillating circuit to achieve better temperature stability of the converter. The novelty of this method lies in the switching-mode converter, the use of additionally connected impedances in parallel to the shunt capacitances of the quartz crystal, and two inductances in series to the quartz crystal. This brings a considerable reduction of the temperature influence of AT-cut crystal frequency change in the temperature range between 10 and 40 °C. The oscillator switching method and the switching impedances connected to the quartz crystal do not only compensate for the crystal's natural temperature characteristics but also any other influences on the crystal such as ageing as well as from other oscillating circuit elements. In addition, the method also improves frequency sensitivity in inductance measurements. The experimental results show that through high temperature compensation improvement of the quartz crystal characteristics, this switching method theoretically enables a 2 pH resolution. It converts inductance to frequency in the range of 85-100 µH to 2-560 kHz.

High Resolution Switching Mode Inductance-to-Frequency Converter with Temperature Compensation

Directory of Open Access Journals (Sweden)

Vojko Matko

2014-10-01

Full Text Available This article proposes a novel method for the temperature-compensated inductance-to-frequency converter with a single quartz crystal oscillating in the switching oscillating circuit to achieve better temperature stability of the converter. The novelty of this method lies in the switching-mode converter, the use of additionally connected impedances in parallel to the shunt capacitances of the quartz crystal, and two inductances in series to the quartz crystal. This brings a considerable reduction of the temperature influence of AT-cut crystal frequency change in the temperature range between 10 and 40 °C. The oscillator switching method and the switching impedances connected to the quartz crystal do not only compensate for the crystal’s natural temperature characteristics but also any other influences on the crystal such as ageing as well as from other oscillating circuit elements. In addition, the method also improves frequency sensitivity in inductance measurements. The experimental results show that through high temperature compensation improvement of the quartz crystal characteristics, this switching method theoretically enables a 2 pH resolution. It converts inductance to frequency in the range of 85–100 µH to 2–560 kHz.

A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs

International Nuclear Information System (INIS)

Wang Wei; Li Na; Ren Yuzhou; Li Hao; Zheng Lifen; Li Jin; Jiang Junjie; Chen Xiaoping; Wang Kai; Xia Chunping

2013-01-01

The effects of linear doping profile near the source and drain contacts on the switching and high-frequency characteristics for conventional single-material-gate CNTFET (C-CNTFET) and hetero-material-gate CNTFET (HMG-CNTFET) have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations. The simulation results show that at a CNT channel length of 20 nm with chirality (7, 0), the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects (SCEs) in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications. (semiconductor devices)

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

International Nuclear Information System (INIS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge 2 Sb 2 Te 5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters

Proceedings of the switched power workshop

International Nuclear Information System (INIS)

Fernow, R.C.

1988-01-01

These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

Science.gov (United States)

Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

2016-01-21

We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

High voltage fast switches for nuclear applications

International Nuclear Information System (INIS)

Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

1999-01-01

SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

Optimization and Design of a Low Power Switched Current A/D Sigma-Delta-Modulator for Voice Band Applications

DEFF Research Database (Denmark)

Jørgensen, Ivan Harald Holger; Bogason, Gudmundur

1998-01-01

This paper presents a third order switched current sigma delta-modulator. The modulator is optimized at the system level for minimum power consumption by careful design of the noise transfer function. A thorough noise analysis of the cascode type current copiers used to implement the modulator......, together with a new methodology for evaluating the nonlinear settling behavior is presented. This leads to a new optimization methodology that minimize the power consumption in switched current circuits for given design parameters. The optimization methodology takes process variations into account....... The modulator is implemented in a standard 2.4 mu m CMOS process only using MOS capacitors. For a power supply of 3.3 V the power consumption is approximately 2.5 mW when operating at a sampling rate of 600 kHz. Under these condition the peak SNR it measured to 74.5 dB with a signal band width of 5.5 kHz. Due...

What happens in Josephson junctions at high critical current densities

Science.gov (United States)

Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

2017-07-01

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

High-voltage switching for in-flight capture of keV antiprotons in a Penning trap

International Nuclear Information System (INIS)

Fei, X.; Davisson, R.; Gabrielse, G.

1987-01-01

The recently observed in-flight capture of keV antiprotons and protons in a Penning trap requires that the -3-kV potentials on electrodes of a Penning trap near 4.2 K be switched on and off with switching times less than 20 ns. These rapidly switched potentials are applied via transmission lines which are not terminated at the trap, thereby avoiding unacceptable heat load on the helium Dewar. Simple high-voltage switching circuits are constructed using krytrons and reed relays. A krytron provides the rapid switching and stays on just long enough for a reed relay to kick in and maintain the switched state indefinitely

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Directory of Open Access Journals (Sweden)

Tejinder Singh

2014-01-01

Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

Exciter switch

Science.gov (United States)

Mcpeak, W. L.

1975-01-01

A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

Harmonic Analysis and Mitigation of Low- Frequency Switching Voltage Source Inverter with Auxiliary VSI

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

The output currents of high-power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the background harmonics in the grid voltage. This paper presents an active harmonic filtering scheme for high-power, low-frequency switching VSIs with an additional auxiliary VSI. In th...

Launched electrons in plasma opening switches

International Nuclear Information System (INIS)

Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

1989-01-01

Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

Directory of Open Access Journals (Sweden)

K Higa

2016-10-01

Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

Current-Induced Switching of a Single-Molecule Magnet with Arbitrary Oriented Easy Axis

OpenAIRE

Misiorny, Maciej; Barnas, Józef

2007-01-01

The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current flowing through the system. To do this we consider a model system that consists of a SMM embedded in the nonmagnetic barrier of a magnetic tunnel junction. The anisotropy axis of the SMM forms an arbitrary angle with magnetic moments of the leads (the latt...

DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

Directory of Open Access Journals (Sweden)

Dimas Bagus Saputra

2017-01-01

Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

Stability analysis of direct current control in current source rectifier

DEFF Research Database (Denmark)

Lu, Dapeng; Wang, Xiongfei; Blaabjerg, Frede

2017-01-01

Current source rectifier with high switching frequency has a great potential for improving the power efficiency and power density in ac-dc power conversion. This paper analyzes the stability of direct current control based on the time delay effect. Small signal model including dynamic behaviors...

Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

Directory of Open Access Journals (Sweden)

Yanbin Hou

2016-01-01

Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

International Nuclear Information System (INIS)

Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

1994-01-01

Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

Micro optical fiber display switch based on the magnetohydrodynamic (MHD) principle

Science.gov (United States)

Lian, Kun; Heng, Khee-Hang

2001-09-01

This paper reports on a research effort to design, microfabricate and test an optical fiber display switch based on magneto hydrodynamic (MHD) principal. The switch is driven by the Lorentz force and can be used to turn on/off the light. The SU-8 photoresist and UV light source were used for prototype fabrication in order to lower the cost. With a magnetic field supplied by an external permanent magnet, and a plus electrical current supplied across the two inert sidewall electrodes, the distributed body force generated will produce a pressure difference on the fluid mercury in the switch chamber. By change the direction of current flow, the mercury can turn on or cut off the light pass in less than 10 ms. The major advantages of a MHD-based micro-switch are that it does not contain any solid moving parts and power consumption is much smaller comparing to the relay type switches. This switch can be manufactured by molding gin batch production and may have potential applications in extremely bright traffic control,, high intensity advertising display, and communication.

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament.

Science.gov (United States)

Ueno, A; Oguri, H; Ikegami, K; Namekawa, Y; Ohkoshi, K; Tokuchi, A

2010-02-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB(6)) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 microH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 A x 140 V) and a duty factor of more than 1.5% (600 micros x 25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H(-) ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 micros and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament

International Nuclear Information System (INIS)

Ueno, A.; Oguri, H.; Ikegami, K.; Namekawa, Y.; Ohkoshi, K.; Tokuchi, A.

2010-01-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB 6 ) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 μH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 Ax140 V) and a duty factor of more than 1.5%(600 μsx25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H - ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 μs and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

Designing high-order power-source synchronous current converters for islanded and grid-connected microgrids

DEFF Research Database (Denmark)

Ashabani, Mahdi; Gooi, Hoay Beng; Guerrero, Josep M.

2018-01-01

This paper deals with development of a versatile and compact control strategy for voltage source converters in grid-connected and islanded microgrids using synchronous current converters technology. The key feature is its new integrated high-order controller/synchronizer with applicability to both...... and automated current-based grid synchronization. Moreover, the controller realizes a power-source current-controlled microgrid with minimum control loops, as compared to widely adopted voltage controlled microgrids in the literature, with advantages such as fault-ride-through and inherent droop-less power...... sharing capabilities. Adaptive current-based synchronization and smooth switching to islanding mode provides high flexibility, reliability and only-plug operation capability. Extensive simulation and experimental results are presented to demonstrate performance of the proposed control and management...

Interface-Enhanced Spin-Orbit Torques and Current-Induced Magnetization Switching of Pd /Co /AlOx Layers

Science.gov (United States)

Ghosh, Abhijit; Garello, Kevin; Avci, Can Onur; Gabureac, Mihai; Gambardella, Pietro

2017-01-01

Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to developing electrically controlled memory and logic devices. Here, we report on vector measurements of the current-induced spin-orbit torques and magnetization switching in perpendicularly magnetized Pd /Co /AlOx layers as a function of Pd thickness. We find sizable dampinglike (DL) and fieldlike (FL) torques, on the order of 1 mT per 107 A /cm2 , which have different thicknesses and magnetization angle dependencies. The analysis of the DL torque efficiency per unit current density and the electric field using drift-diffusion theory leads to an effective spin Hall angle and spin-diffusion length of Pd larger than 0.03 and 7 nm, respectively. The FL spin-orbit torque includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and, furthermore, is strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd /Co /AlOx layers with a similar current density to that used for Pt /Co layers with a comparable perpendicular magnetic anisotropy.

Q-Switched High Power Single Frequency 2 Micron Fiber Laser, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Accurate measurement of atmospheric parameters with high resolution needs advanced lasers. In this SBIR program we propose to develop innovative Q-switched high...

High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

International Nuclear Information System (INIS)

Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

2009-01-01

A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

Nanosecond high-power dense microplasma switch for visible light

Energy Technology Data Exchange (ETDEWEB)

Bataller, A., E-mail: bataller@physics.ucla.edu; Koulakis, J.; Pree, S.; Putterman, S. [Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, California 90095 (United States)

2014-12-01

Spark discharges in high-pressure gas are known to emit a broadband spectrum during the first 10 s of nanoseconds. We present calibrated spectra of high-pressure discharges in xenon and show that the resulting plasma is optically thick. Laser transmission data show that such a body is opaque to visible light, as expected from Kirchoff's law of thermal radiation. Nanosecond framing images of the spark absorbing high-power laser light are presented. The sparks are ideal candidates for nanosecond, high-power laser switches.

AIR ATMOSPHERIC-PRESSURE DISCHARGERS FOR OPERATION IN HIGH-FREQUENCY SWITCHING MODE.

Directory of Open Access Journals (Sweden)

L.S. Yevdoshenko

2013-10-01

Full Text Available Operation of two designs of compact multigap dischargers has been investigated in a high-frequency switching mode. It is experimentally revealed that the rational length of single discharge gaps in the designs is 0.3 mm, and the maximum switching frequency is 27000 discharges per second under long-term stable operation of the dischargers. It is shown that in pulsed corona discharge reactors, the pulse front sharpening results in increasing the operating electric field strength by 1.3 – 1.8 times.

PV source based high voltage gain current fed converter

Science.gov (United States)

Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

2017-11-01

This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

Application of plasma erosion opening switches to high power accelerators for pulse compression and power multiplication

International Nuclear Information System (INIS)

Meyer, R.A.; Boller, J.R.; Commisso, R.J.

1983-01-01

A new vacuum opening switch called a plasma erosion opening switch is described. A model of its operation is presented and the energy efficiency of such a switch is discussed. Recent high power experiments on the Gamble II accelerator are described and compared to previous experiments

DC switching regulated power supply for driving an inductive load

Science.gov (United States)

Dyer, George R.

1986-01-01

A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

Fast commutation of high current in double wire array Z-pinch loads

International Nuclear Information System (INIS)

Davis, J.; Gondarenko, N.A.; Velikovich, A.L.

1997-01-01

A dynamic model of multi-MA current commutation in a double wire array Z-pinch load is proposed and studied theoretically. Initially, the load is configured as nested concentric wire arrays, with the current driven through the outer array and imploding it. Once the outer array or the annular plasma shell formed from it approaches the inner array, the imploded plasma might penetrate through the gaps between the wires, but the azimuthal magnetic field is trapped due to both the high conductivity of the inner wires and the inductive coupling between the two parts of the array, causing a rapid switching of the total current to the inner part of the array. copyright 1997 American Institute of Physics

Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

NARCIS (Netherlands)

Gomes, H.L.; Rocha, P.R.F.; Kiazadeh, A.; Leeuw, de D.M.; Meskers, S.C.J.

2011-01-01

Metal-oxide polymer diodes exhibit non-volatile resistive switching. The current–voltage characteristics have been studied as a function of temperature. The low-conductance state follows a thermally activated behaviour. The high-conductance state shows a multistep-like behaviour and below 300 K an

Scalable Active Optical Access Network Using Variable High-Speed PLZT Optical Switch/Splitter

Science.gov (United States)

Ashizawa, Kunitaka; Sato, Takehiro; Tokuhashi, Kazumasa; Ishii, Daisuke; Okamoto, Satoru; Yamanaka, Naoaki; Oki, Eiji

This paper proposes a scalable active optical access network using high-speed Plumbum Lanthanum Zirconate Titanate (PLZT) optical switch/splitter. The Active Optical Network, called ActiON, using PLZT switching technology has been presented to increase the number of subscribers and the maximum transmission distance, compared to the Passive Optical Network (PON). ActiON supports the multicast slot allocation realized by running the PLZT switch elements in the splitter mode, which forces the switch to behave as an optical splitter. However, the previous ActiON creates a tradeoff between the network scalability and the power loss experienced by the optical signal to each user. It does not use the optical power efficiently because the optical power is simply divided into 0.5 to 0.5 without considering transmission distance from OLT to each ONU. The proposed network adopts PLZT switch elements in the variable splitter mode, which controls the split ratio of the optical power considering the transmission distance from OLT to each ONU, in addition to PLZT switch elements in existing two modes, the switching mode and the splitter mode. The proposed network introduces the flexible multicast slot allocation according to the transmission distance from OLT to each user and the number of required users using three modes, while keeping the advantages of ActiON, which are to support scalable and secure access services. Numerical results show that the proposed network dramatically reduces the required number of slots and supports high bandwidth efficiency services and extends the coverage of access network, compared to the previous ActiON, and the required computation time for selecting multicast users is less than 30msec, which is acceptable for on-demand broadcast services.

Switched-capacitor techniques for high-accuracy filter and ADC design

NARCIS (Netherlands)

Quinn, P.J.; Roermund, van A.H.M.

2007-01-01

Switched capacitor (SC) techniques are well proven to be excellent candidates for implementing critical analogue functions with high accuracy, surpassing other analogue techniques when embedded in mixed-signal CMOS VLSI. Conventional SC circuits are primarily limited in accuracy by a) capacitor

Switched-mode converters (one quadrant)

CERN Document Server

Barrade, P

2006-01-01

Switched-mode converters are DC/DC converters that supply DC loads with a regulated output voltage, and protection against overcurrents and short circuits. These converters are generally fed from an AC network via a transformer and a conventional diode rectifier. Switched-mode converters (one quadrant) are non-reversible converters that allow the feeding of a DC load with unipolar voltage and current. The switched-mode converters presented in this contribution are classified into two families. The first is dedicated to the basic topologies of DC/DC converters, generally used for low- to mid-power applications. As such structures enable only hard commutation processes, the main drawback of such topologies is high commutation losses. A typical multichannel evolution is presented that allows an interesting decrease in these losses. Deduced from this direct DC/DC converter, an evolution is also presented that allows the integration of a transformer into the buck and the buck–boost structure. This enables an int...

Optical switching systems using nanostructures

DEFF Research Database (Denmark)

Stubkjær, Kristian

2004-01-01

High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

Module Integrated GaN Power Stage for High Switching Frequency Operation

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold

2017-01-01

is integrated on a high glass transition temperature 0.4 mmthick FR4 substrate configured as a 70 pin ball grid arraypackage. The power stage is tested up to switching frequency of12 MHz. The power stage achieved 88.5 % peak efficiency whenconfigured as a soft switching buck converter operating at 7MHz......An increased attention has been detected todevelop smaller and lighter high voltage power converters in therange of 50 V to 400 V domains. The applications for theseconverters are mainly focused for Power over Ethernet (PoE),LED lighting and ac adapters. Design for high power density isone...... of the targets for next generation power converters. Thispaper presents an 80 V input capable multi-chip moduleintegration of enhancement mode gallium nitride (GaN) fieldeffect transistors (FETs) based power stage. The module design ispresented and validated through experimental results. The powerstage...

Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

Directory of Open Access Journals (Sweden)

Aiswariya Sekar

2015-11-01

Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

A prototype switched Ethernet data acquisition system

International Nuclear Information System (INIS)

Ye Gaoying; Deng Huichen; Chen Liaoyuan; Liu Li; Wang Xinhui

1999-01-01

A prototype switched Ethernet data acquisition system has been built up and successfully operated in HL-1M tokamak experiments. The system is based on a switched high bandwidth Ethernet network with which the CAMAC crates are directly interfaced. It takes the advanced features of LAN switch and Ethernet CAMAC controller (ECC 1365 MK III, HYTEC product) to avoid the rewriting of CAMAC driver for an individual computer system and to ensure high data transmission rate between CAMAC system and host computers on the network. It is a new approach to DAS system architecture and provides a solution for a well-known bottleneck problem in traditional distributed DAS system for fusion research. An average throughput of the test system reaches over 100 Mbps. The system features also an easy and low cost migration from traditional distributed DAS system. In the paper, the hardware configuration, software structure, performance of the system and the method of migrating from current DAS system are discussed in detail. (orig.)

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

Science.gov (United States)

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

Science.gov (United States)

Asari, Tsukasa; Shibata, Ryosuke; Awano, Hiroyuki

2017-05-01

Nanoimprint lithography (NIL) is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS) in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL). We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc) for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

Plasma opening switch experiments on the Particle Beam Accelerator II

International Nuclear Information System (INIS)

Sweeney, M.A.; McDaniel, D.H.; Mendel, C.W.; Rochau, G.E.; Moore, W.B.S.; Mowrer, G.R.; Simpson, W.W.; Zagar, D.M.; Grasser, T.; McDougal, C.D.

1989-01-01

Plasma opening switch (POS) experiments have been done since 1986 on the PBFA-II ion beam accelerator to develop a rugged POS that will open rapidly ( 80%) into a high impedance (> 10 ohm) load. In a recent series of experiments on PBFA II, the authors have developed and tested three different switch designs that use magnetic fields to control and confine the injected plasma. All three configurations couple current efficiently to a 5-ohm electron beam diode. In this experimental series, the PBFA-II Delta Series, more extensive diagnostics were used than in previous switch experiments on PBFA II or on the Blackjack 5 accelerator at Maxwell Laboratories. Data from the experiments with these three switch designs is presented

Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

2016-12-15

Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

Influence of irradiation on the switching behavior in PZT thin films

International Nuclear Information System (INIS)

Baturin, I.; Menou, N.; Shur, V.; Muller, C.; Kuznetsov, D.; Hodeau, J.-L.; Sternberg, A.

2005-01-01

Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O 3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1 1 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics

Performance evaluation of a high-speed switched network for PACS

Science.gov (United States)

Zhang, Randy H.; Tao, Wenchao; Huang, Lu J.; Valentino, Daniel J.

1998-07-01

We have replaced our shared-media Ethernet and FDDI network with a multi-tiered, switched network using OC-12 (622 Mbps) ATM for the network backbone, OC3 (155 Mbps) connections to high-end servers and display workstations, and switched 100/10 Mbps Ethernet for workstations and desktop computers. The purpose of this research was to help PACS designers and implementers understand key performance factors in a high- speed switched network by characterizing and evaluating its image delivery performance, specifically, the performance of socket-based TCP (Transmission Control Protocol) and DICOM 3.0 communications. A test network within the UCLA Clinical RIS/PACS was constructed using Sun UltraSPARC-II machines with ATM, Fast Ethernet, and Ethernet network interfaces. To identify performance bottlenecks, we evaluated network throughput for memory to memory, memory to disk, disk to memory, and disk to disk transfers. To evaluate the effect of file size, tests involving disks were further divided using sizes of small (514 KB), medium (8 MB), and large (16 MB) files. The observed maximum throughput for various network configurations using the TCP protocol was 117 Mbps for memory to memory and 88 MBPS for memory to disk. For disk to memory, the peak throughput was 98 Mbps using small files, 114 Mbps using medium files, and 116 Mbps using large files. The peak throughput for disk to disk became 64 Mbps using small files and 96 Mbps using medium and large files. The peak throughput using the DICOM 3.0 protocol was substantially lower in all categories. The measured throughput varied significantly among the tests when TCP socket buffer was raised above the default value. The optimal buffer size was approximately 16 KB or the TCP protocol and around 256 KB for the DICOM protocol. The application message size also displayed distinctive effects on network throughput when the TCP socket buffer size was varied. The throughput results for Fast Ethernet and Ethernet were expectedly

Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

International Nuclear Information System (INIS)

Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

2015-01-01

We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

Application of parallel connected power-MOSFET elements to high current d.c. power supply

International Nuclear Information System (INIS)

Matsukawa, Tatsuya; Shioyama, Masanori; Shimada, Katsuhiro; Takaku, Taku; Neumeyer, Charles; Tsuji-Iio, Shunji; Shimada, Ryuichi

2001-01-01

The low aspect ratio spherical torus (ST), which has single turn toroidal field coil, requires the extremely high d.c. current like as 20 MA to energize the coil. Considering the ratings of such extremely high current and low voltage, power-MOSFET element is employed as the switching device for the a.c./d.c. converter of power supply. One of the advantages of power-MOSFET element is low on-state resistance, which is to meet the high current and low voltage operation. Recently, the capacity of power-MOSFET element has been increased and its on-state resistance has been decreased, so that the possibility of construction of high current and low voltage a.c./d.c. converter with parallel connected power-MOSFET elements has been growing. With the aim of developing the high current d.c. power supply using power-MOSFET, the basic characteristics of parallel operation with power-MOSFET elements are experimentally investigated. And, the synchronous rectifier type and the bi-directional self commutated type a.c./d.c. converters using parallel connected power-MOSFET elements are proposed

Investigation of DC hybrid circuit breaker based on high-speed switch and arc generator

Science.gov (United States)

Wu, Yifei; Rong, Mingzhe; Wu, Yi; Yang, Fei; Li, Mei; Zhong, Jianying; Han, Guohui; Niu, Chunping; Hu, Yang

2015-02-01

A new design of DC hybrid circuit breaker based on high-speed switch (HSS) and arc generator (AG), which can drastically profit from low heat loss in normal state and fast current breaking under fault state, is presented and analyzed in this paper. AG is designed according to the magnetic pinch effect of liquid metal. By utilizing the arc voltage generated across AG, the fault current is rapidly commutated from HSS into parallel connected branch. As a consequence, the arcless open of HSS is achieved. The post-arc conducting resume time (Δ tc) of AG and the commutation original voltage (Uc), two key factors in the commutation process, are investigated experimentally. Particularly, influences of the liquid metal channel diameter (Φ) of AG, fault current rate of rise (di/dt) and Uc on Δ tc are focused on. Furthermore, a suitable Uc is determined during the current commutation process, aiming at the reliable arcless open of HSS and short breaking time. Finally, the fault current breaking test is carried out for the current peak value of 11.8 kA, and the validity of the design is confirmed by the experimental results.

Investigation of DC hybrid circuit breaker based on high-speed switch and arc generator.

Science.gov (United States)

Wu, Yifei; Rong, Mingzhe; Wu, Yi; Yang, Fei; Li, Mei; Zhong, Jianying; Han, Guohui; Niu, Chunping; Hu, Yang

2015-02-01

A new design of DC hybrid circuit breaker based on high-speed switch (HSS) and arc generator (AG), which can drastically profit from low heat loss in normal state and fast current breaking under fault state, is presented and analyzed in this paper. AG is designed according to the magnetic pinch effect of liquid metal. By utilizing the arc voltage generated across AG, the fault current is rapidly commutated from HSS into parallel connected branch. As a consequence, the arcless open of HSS is achieved. The post-arc conducting resume time (Δ tc) of AG and the commutation original voltage (Uc), two key factors in the commutation process, are investigated experimentally. Particularly, influences of the liquid metal channel diameter (Φ) of AG, fault current rate of rise (di/dt) and Uc on Δ tc are focused on. Furthermore, a suitable Uc is determined during the current commutation process, aiming at the reliable arcless open of HSS and short breaking time. Finally, the fault current breaking test is carried out for the current peak value of 11.8 kA, and the validity of the design is confirmed by the experimental results.

High-speed photography of a 'switch-on' collisionless shock

International Nuclear Information System (INIS)

El-Khalafawy, T.A.; El-Nicklawy, M.M.; Bashara, A.B.; El-Masry, M.A.; Rudnev, N.J.

1975-01-01

The paper presents the results of the investigation of a 'switch-on' shock profile and the measurement of the wave velocity in the collisionless regime employing high-speed photography. Data for the electron temperature (Tsub(e)) ahead of and behind the wave front are presented here, and a Table with estimated and measured characteristic physical quantities. (author)

Electrode erosion properties of gas spark switches for fast linear transformer drivers

Science.gov (United States)

Li, Xiaoang; Pei, Zhehao; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

2017-12-01

Fast linear transformer drivers (FLTDs) are a popular and potential route for high-power devices employing multiple "bricks" in series and parallel, but they put extremely stringent demands on gas switches. Electrode erosion of FLTD gas switches is a restrictive and unavoidable factor that degrades performance and limits stability. In this paper, we systematically investigated the electrode erosion characteristics of a three-electrode field distortion gas switch under the typical working conditions of FLTD switches, and the discharge current was 7-46 kA with 46-300 ns rise time. A high speed frame camera and a spectrograph were used to capture the expansion process and the spectral emission of the spark channel was used to estimate the current density and the spark temperature, and then the energy fluxes and the external forces on the electrode surface were calculated. A tens of kilo-ampere nanosecond pulse could generate a 1011 W/m2 energy flux injection and 1.3-3.5 MPa external pressure on the electrode surface, resulting in a millimeter-sized erosion crater with the maximum peak height Rz reaching 100 μm magnitude. According to the morphological images by a laser scanning confocal microscope, the erosion crater of a FLTD switch contained three kinds of local morphologies, namely a center boiling region, an overflow region and a sputtering region. In addition, the crater size, the surface roughness, and the mass loss were highly dependent on the current amplitude and the transferred charge. We also observed Morphology Type I and Type II, respectively, with different pulse parameters, which had an obvious influence on surface roughness and mass loss. Finally, the quantitative relationship between the electrode mass loss and the pulse parameter was clarified. The transferred charge and the current amplitude were proved to be the main factors determining the electrode mass loss of a FLTD switch, and a least squares fitting expression for mass loss was also obtained.

A high voltage DC switching power supply of corona discharge for ozone tube

International Nuclear Information System (INIS)

Ketkaew, Siseerot

2007-08-01

Full text: This paper presents a study of design and construction of a high voltage DC switching power supply for corona generating of ozone gas generating. This supply uses fly back converter at 3 k Vdc 30 khz and controls its operation using PWM techniques. I C TL494 is controlled of the switching. The testing of supply by putting high voltage to ozone gas tube at one-hour, the oxygen quantity 21 % of air, which ozone tube model enables ozone gas generating capacity of 95.2 mgO3/hr

Inherent stochasticity of superconductor-resistor switching behavior in nanowires.

Science.gov (United States)

Shah, Nayana; Pekker, David; Goldbart, Paul M

2008-11-14

We study the stochastic dynamics of superconductive-resistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations. We evaluate the mean switching time using the master-equation formalism, and hence obtain the distribution of switching currents. We find that as the temperature is reduced this distribution initially broadens; only at lower temperatures does it show the narrowing with cooling naively expected for phase slips that are thermally activated. We also find that although several phase-slip events are generally necessary to induce switching, there is an experimentally accessible regime of temperatures and currents for which just one single phase-slip event is sufficient to induce switching, via the local heating it causes.

Current pulse shaping of the load current on PTS

Directory of Open Access Journals (Sweden)

Minghe Xia

2016-02-01

Full Text Available The typical rise time of PTS machine is ∼110 ns with about 10 MA peak current under short pulse mode when all 24 modules discharge simultaneously. By distributing the trigger times of 12 laser beams logically and adjusting the statues of the pulse output switches, longer rise-time pulse can be obtained on the PTS facility. Based on the required pulse shape, whole circuit simulations will be used to calculate the trigger times of each laser triggering gas switch and the status of the pulse output switches. The rise time of the current is determined by the time difference between the first and last trigged laser triggering gas switches. In order to trigger the laser triggering gas switch, sufficient laser power is needed to be sent into the gap of the gas switches. The gas pressure and voltage difference on the two electrodes of the gas switches also affect the triggering of the gas switches, and the voltage added on the gas switch is determined by its transition time. Traditionally the trigger time difference should be less than the transition time of the two neighboring modules. A new simulation model of PTS shows one can break this transition time limits. Series of current pulse shaping experiments have been investigated on the PTS (Primary Test Stand. As results, more than 5 MA peak current were successfully achieved on the load with a rise time of 600 ns. This study and experiments of the pulse shaping on PTS demonstrate the adaptable ability of the PTS for offering different waveform of mega ampere current pulse for different research purpose.

Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

DEFF Research Database (Denmark)

Liu, Dong; Deng, Fujin; Zhang, Qi

2018-01-01

The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...

Radio frequency-assisted fast superconducting switch

Science.gov (United States)

Solovyov, Vyacheslav; Li, Qiang

2017-12-05

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.

2015-12-09

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

2015-01-01

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

The gradual nature of threshold switching

International Nuclear Information System (INIS)

Wimmer, M; Salinga, M

2014-01-01

The recent commercialization of electronic memories based on phase change materials proved the usability of this peculiar family of materials for application purposes. More advanced data storage and computing concepts, however, demand a deeper understanding especially of the electrical properties of the amorphous phase and the switching behaviour. In this work, we investigate the temporal evolution of the current through the amorphous state of the prototypical phase change material, Ge 2 Sb 2 Te 5 , under constant voltage. A custom-made electrical tester allows the measurement of delay times over five orders of magnitude, as well as the transient states of electrical excitation prior to the actual threshold switching. We recognize a continuous current increase over time prior to the actual threshold-switching event to be a good measure for the electrical excitation. A clear correlation between a significant rise in pre-switching-current and the later occurrence of threshold switching can be observed. This way, we found experimental evidence for the existence of an absolute minimum for the threshold voltage (or electric field respectively) holding also for time scales far beyond the measurement range. (paper)

Method and apparatus for current-output peak detection

Science.gov (United States)

De Geronimo, Gianluigi

2017-01-24

A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

Energy Technology Data Exchange (ETDEWEB)

Fan, Yang-Shun [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Hsu, Ching-Hui [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China)

2013-12-31

Recently, non-volatile memory (NVM) has been widely used in electronic devices. Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the conventional Flash memory will approach its scaling limit within about a decade. The resistive random access memory (RRAM) is emerging as one of the potential candidates for future memory replacement because of its high storage density, low power consumption as well as simple structure. The purpose of this work is to develop a reliable a-InGaZnO based resistive switching memory. We investigate the resistive switching characteristics of TiN/Ti/IGZO/Pt structure and TiN/IGZO/Pt structure. The device with TiN/Ti/IGZO/Pt structure exhibits stable bipolar resistive switching. The impact of inserting a Ti interlayer is studied by material analyses. The device shows excellent resistive switching properties. For example, the DC sweep endurance can achieve over 1000 times; and the pulse induced switching cycles can reach at least 10,000 times. Furthermore, the impact of different sputtering ambience, the variable temperature measurement, and the conduction mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices.

Pricing Exotic Options under a High-Order Markovian Regime Switching Model

Directory of Open Access Journals (Sweden)

Wai-Ki Ching

2007-10-01

Full Text Available We consider the pricing of exotic options when the price dynamics of the underlying risky asset are governed by a discrete-time Markovian regime-switching process driven by an observable, high-order Markov model (HOMM. We assume that the market interest rate, the drift, and the volatility of the underlying risky asset's return switch over time according to the states of the HOMM, which are interpreted as the states of an economy. We will then employ the well-known tool in actuarial science, namely, the Esscher transform to determine an equivalent martingale measure for option valuation. Moreover, we will also investigate the impact of the high-order effect of the states of the economy on the prices of some path-dependent exotic options, such as Asian options, lookback options, and barrier options.

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

Science.gov (United States)

Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

2013-01-30

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

Directory of Open Access Journals (Sweden)

Tsukasa Asari

2017-05-01

Full Text Available Nanoimprint lithography (NIL is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL. We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

A new amplifier for improving piezoelectric actuator linearity based on current switching in precision positioning

International Nuclear Information System (INIS)

Ru, Changhai; Chen, Liguo; Shao, Bing; Rong, Weibin; Sun, Lining

2008-01-01

Piezoelectric actuators have traditionally been driven by voltage amplifiers. When driven at large voltages these actuators exhibit a significant amount of distortion, known as hysteresis, which may reduce the stability robustness of the system in feedback control applications. Piezoelectric transducers are known to exhibit less hysteresis when driven with current or charge rather than voltage. Despite this advantage, such methods have found little practical application due to the poor low frequency response of present current and charge driver designs. In this paper, a new piezoelectric amplifier based on current switching is presented which can reduce hysteresis. Special circuits and a hybrid control algorithm realize quick and precise positioning. Experimental results demonstrate that the amplifier can be used for dynamic and static applications and low frequency bandwidths can also be achieved

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This NASA SBIR Phase II effort will develop a 1 x 10 prototype non-mechanical fiber optic switch for use with high power lasers. The proposed optical device is a...

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1990-01-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

Subnanosecond photoconductive switching in GaAs

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

Analysis of current-bidirectional buck-boost based switch-mode audio amplifier

DEFF Research Database (Denmark)

Bolten Maizonave, Gert; Andersen, Michael A. E.; Kjærgaard, Claus

2011-01-01

The following studdy was carried out in order to assses quantitatively the performannce of the buck--boost converter whhen used as swiitch-mode audio amplifier. It comprises of, to beggin with, the de limitation of design criteria bassed on the state of-the-art solution, which is based...... in a differential mode buckbased amplifier with a boost converter as power supply. The averaged switch modelling of the differential mode current bidirectional topology is also used, in order to analyze the steady state and frequency-wise behaviour of this converter and parameterize it to meet the design criteria....... Next, several piecewise-linear siimulation resultss are shown with detail enough to emphasize the features of the converter. A simple prototype is implemented to verify the main predicted features. Presently no previous publicat ion could be found containing a thorough analysis of this topology...

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Science.gov (United States)

Fukami, Shunsuke; Ohno, Hideo

2017-08-01

Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

A differential low-voltage high gain current-mode integrated RF receiver front-end

Energy Technology Data Exchange (ETDEWEB)

Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

2011-02-15

A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

Integrated Very High Frequency Switch Mode Power Supplies: Design Considerations

DEFF Research Database (Denmark)

Hertel, Jens Christian; Nour, Yasser; Knott, Arnold

2017-01-01

simulations. The required spiral inductors was modeled, and simulations show Q values of as high as 14 at a switching frequency of 250 MHz. Simulations of the converter show an efficiency of 55 % with a self oscillating gate drive. However the modeled inductor was not adequate for operating with the self...

Load Torque Compensator for Model Predictive Direct Current Control in High Power PMSM Drive Systems

DEFF Research Database (Denmark)

Preindl, Matthias; Schaltz, Erik

2010-01-01

In drive systems the most used control structure is the cascade control with an inner torque, i.e. current and an outer speed control loop. The fairly small converter switching frequency in high power applications, e.g. wind turbines lead to modest speed control performance. An improvement bring...... the use of a current controller which takes into account the discrete states of the inverter, e.g. DTC or a more modern approach: Model Predictive Direct Current Control (MPDCC). Moreover overshoots and oscillations in the speed are not desired in many applications, since they lead to mechanical stress...

Investigation of current redistribution in superstabilized superconducting winding when switching to the normal resistive state

International Nuclear Information System (INIS)

Devred, A.

1989-01-01

We have investigated the electromagnetic behavior of a layer of superstabilized superconductive composite conductors when switching instantaneously and uniformly to the normal resistive state. The Laplace transform was used to solve the current diffusion equation in the superstabilizing material. The value of power dissipated per unit volume, averaged over the layer thickness, was then computed using the ''pseudo''-convolution theorem in the complex plane. Last, we present a simple interpretation of the phenomenon with the help of two time constants

Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

Science.gov (United States)

Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

2009-04-14

DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Pu, Minhao

2015-01-01

We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

Experimental research on the overvoltage protection of high-power thyristor switch

International Nuclear Information System (INIS)

Chang Lei; Yang Jianhua; Liu Lie

2010-01-01

The influence of resistance-capacitance absorption circuit and static equalizing resistance to thyristor switching performance is investigated, regarding both one single thyristor and two serial thyristors. A conclusion that the higher charging voltage the higher peak value of forward current, reverse current and rising rate has been achieved. To one single thyristor, the resistance-capacitance absorption circuit makes the peak value and rising rate of forward and reverse currents much higher, but lower pulse width; different resistance values (2,10) of resistance-capacitance absorption circuit make no sense to the amplitude and rising rate of forward current, and the pulse width of reverse current. However, the higher the resistance value the lower the amplitude of reverse current, which leads to a lower current rising rate. To the two serial thyristors, the current amplitudes are not precisely half that of one single thyristor, and the forward current is a little higher while the reverse one is obviously lower; the rising time of forward and reverse currents is shortened, especially for the reverse current which is only 1/5 of one single thyristor. Notably, the capacitance impact of thyristor should not be ignored. (authors)

High-Current Cold Cathode Employing Diamond and Related Materials

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

2014-10-22

The essence of this project was for diamond films to be deposited on cold cathodes to improve their emission properties. Films with varying morphology, composition, and size of the crystals were deposited and the emission properties of the cathodes that utilize such films were studied. The prototype cathodes fabricated by the methods developed during Phase I were tested and evaluated in an actual high-power RF device during Phase II. These high-power tests used the novel active RF pulse compression system and the X-band magnicon test facility at US Naval Research Laboratory. In earlier tests, plasma switches were employed, while tests under this project utilized electron-beam switching. The intense electron beams required in the switches were supplied from cold cathodes embodying diamond films with varying morphology, including uncoated molybdenum cathodes in the preliminary tests. Tests with uncoated molybdenum cathodes produced compressed X-band RF pulses with a peak power of 91 MW, and a maximum power gain of 16.5:1. Tests were also carried out with switches employing diamond coated cathodes. The pulse compressor was based on use of switches employing electron beam triggering to effect mode conversion. In experimental tests, the compressor produced 165 MW in a ~ 20 ns pulse at ~18× power gain and ~ 140 MW at ~ 16× power gain in a 16 ns pulse with a ~ 7 ns flat-top. In these tests, molybdenum blade cathodes with thin diamond coatings demonstrated good reproducible emission uniformity with a 100 kV, 100 ns high voltage pulse. The new compressor does not have the limitations of earlier types of active pulse compressors and can operate at significantly higher electric fields without breakdown.

Pseudospark switches (PSS) for pulsed power applications

Energy Technology Data Exchange (ETDEWEB)

Heine, F; Prucker, U; Frank, K; Goertler, A; Schwandner, A; Tkotz, R; Hoffmann, D H.H.; Christiansen, J [Univ. of Erlangen (Germany). Physics Dept. I

1997-12-31

Based on the pseudospark discharge, a low pressure gas discharge in a special geometry, fast closing switches for different pulsed power applications have been designed. Medium power PSS ({<=} 30 kA peak current) were used in laser circuits whereas high current PSS are tested successfully in high current pulsed power applications ({<=} 200 kA). For currents of a few kA the discharge is supported by cathode spots on the cold cathode surface. For higher currents, anode activity is observed too. Inserting semiconductor material seems not only to suppress high erosive spot formation but to support diffuse large-area electrode emission. A different approach to solving the problem of lowering the erosion rate is the multichannel PSS (MUPS). In order to distribute the discharge current to more than one single channel, three or more discharge channels are radial or coaxial arranged. With regard to high voltage applications the maximum hold-off voltage was increased by adding an intermediate electrode. (author). 1 figs., 12 refs.

EMC considerations for protection of cables against switching effects at secondary side of substations

Energy Technology Data Exchange (ETDEWEB)

Heydari, H.; Faghihi, F.; Abbasi, V. [Iran Univ. of Science and Technology, Narmak, Tehran (Iran, Islamic Republic of). Center of Excellence for Power System Automation and Operation

2007-07-01

High performance and correct functionality of equipment that operate in high voltage substations during transient states need careful engineering design. To achieve electromagnetic compatibility (EMC) in a system, it is necessary to correct design problems and to use special methods like shielding, grounding and filtering which cause an increase in overall cost. This paper discussed a study of a medium voltage substation whose switching process caused electromagnetic interference to low voltage cables. Three methods of decreasing overvoltage and overcurrent were discussed and compared. Recognition of magnetic fields was accomplished by ANSYS (base on finite element method). In addition, overvoltages during the switching process were calculated by common mode and differential mode equivalent circuit. The purpose of the study was to assist designers and engineers in selecting a suitable method to achieve electromagnetic compatibility in a substation. The paper discussed the amplitude of switching currents; common mode current; and methods of reducing overvoltages and overcurrents. These methods included differential mode current and shielding. It was concluded that several methods exist to protect a substations against electromagnetic interference effects. An important problem is the structure of switching in a substation that determines the strength of electromagnetic interference. A substation designer can chose the best way to achieve EMC by considering a switching structure that depends on system topology and cost function of the selected method. 7 refs., 17 figs.

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

Science.gov (United States)

Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

2018-01-01

We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

Science.gov (United States)

Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

2016-12-01

Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

Science.gov (United States)

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-03-23

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

Repetitive switching for an electromagnetic rail gun

Science.gov (United States)

Gruden, J. M.

1983-12-01

Previous testing on a repetitive opening switch for inductive energy storage has proved the feasibility of the rotary switch concept. The concept consists of a rotating copper disk (rotor) with a pie-shaped insulator section and brushes which slide along each of the rotor surfaces. While on top of the copper surface, the brushes and rotor conduct current allowing the energy storage inductor to charge. When the brushes slide onto the insulator section, the current cannot pass through the rotor and is diverted into the load. This study investigates two new brush designs and a rotor modification designed to improve the current commutating capabilities of the switch. One brush design (fringe fiber) employs carbon fibers on the leading and trailing edge of the brush to increase the resistive commutating action as the switch opens and closes. The other brush design uses fingers to conduct current to the rotor surface, effectively increasing the number of brush contact points. The rotor modification was the placement of tungsten inserts at the copper-insulator interfaces.

Switching Phenomena in a System with No Switches

Science.gov (United States)

Preis, Tobias; Stanley, H. Eugene

2010-02-01

It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

Temperature induced complementary switching in titanium oxide resistive random access memory

Energy Technology Data Exchange (ETDEWEB)

Panda, D., E-mail: dpanda@nist.edu [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Simanjuntak, F. M.; Tseng, T.-Y. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-07-15

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

High-Temperature Switched-Reluctance Electric Motor

Science.gov (United States)

Montague, Gerald; Brown, Gerald; Morrison, Carlos; Provenza, Andy; Kascak, Albert; Palazzolo, Alan

2003-01-01

An eight-pole radial magnetic bearing has been modified into a switched-reluctance electric motor capable of operating at a speed as high as 8,000 rpm at a temperature as high as 1,000 F (=540 C). The motor (see figure) is an experimental prototype of starter-motor/generator units that have been proposed to be incorporated into advanced gas turbine engines and that could operate without need for lubrication or active cooling. The unique features of this motor are its electromagnet coils and, to some extent, its control software. Heretofore, there has been no commercial-off-the-shelf wire capable of satisfying all of the requirements for fabrication of electromagnet coils capable of operation at temperatures up to 1,000 F (=540 C). The issues addressed in the development of these electromagnet coils included thermal expansion, oxidation, pliability to small bend radii, micro-fretting, dielectric breakdown, tensile strength, potting compound, thermal conduction, and packing factor. For a test, the motor was supported, along with a rotor of 18 lb (.8-kg) mass, 3-in. (.7.6-cm) diameter, 21-in. (.53-cm) length, on bearings packed with high-temperature grease. The motor was located at the mid span of the rotor and wrapped with heaters. The motor stator was instrumented with thermocouples. At the time of reporting the information for this article, the motor had undergone 14 thermal cycles between room temperature and 1,000 F (.540 C) and had accumulated operating time >27.5 hours at 1,000 F (=540 C). The motor-controller hardware includes a personal computer equipped with analog-to-digital input and digital-to-analog output cards. The controller software is a C-language code that implements a switched-reluctance motor-control principle: that is, it causes the coils to be energized in a sequence timed to generate a rotating magnetic flux that creates a torque on a scalloped rotor. The controller can operate in an open- or closed-loop mode. In addition, the software has

Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

Science.gov (United States)

Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2018-02-01

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

Low-Voltage Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Bidari, E.; Keskin, M.; Maloberti, F.

1999-01-01

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

A New Asymmetrical Current-fed Converter with Voltage Lifting

Directory of Open Access Journals (Sweden)

DELSHAD, M.

2011-05-01