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Sample records for high charge carrier

  1. Hall mobility of free charge carriers in highly compensated p-Germanium

    International Nuclear Information System (INIS)

    Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

    2000-01-01

    Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

  2. Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

    International Nuclear Information System (INIS)

    Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

    1984-01-01

    The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

  3. Towards high charge carrier mobilities by rational design of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  4. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.; McGehee, Michael D.

    2013-01-01

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation

    Science.gov (United States)

    Hamm, Daniel S.; Rust, Mikah; Herrera, Elan H.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Stowe, Ashley; Preston, Jeff; Lukosi, Eric D.

    2018-06-01

    This paper reports on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14-15 fC) than that of alpha particles (3-5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.

  7. Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

    International Nuclear Information System (INIS)

    Aleksandrov, A.L.; Vedeneev, A.S.; Gulyaev, I.B.; Zhdan, A.G.

    1982-01-01

    A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm 2 /Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

  8. High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

    Science.gov (United States)

    Button, Steven W.; Mativetsky, Jeffrey M.

    2017-08-01

    Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

  9. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  10. Magnetic dipole self-organization of charge carriers in high-temperature superconductors and kinetics of phase transformation

    CERN Document Server

    Voronov, A V; Shuvalov, V V

    2001-01-01

    The phenomenological model, describing the magnetic dipole self-organization of charge carriers (formation of so-called stripe-structures and energy gap in the states spectrum), is designed for interpreting the data on the nonstationary nonlinear spectroscopy of the high-temperature superconductors. It is shown that after fast heating of the superconducting sample the kinetics of the subsequent phase transition depends on the initial temperature T. The destruction of the stripe-structures at low overheating T* < T < T sub m approx = (1.4-1.5)T*, whereby T sub c and T* approx = T sub c are the temperatures of transition into the superconducting state and formation of the stripe-structures occurs slowly (the times above 10 sup - sup 9 s) in spite of practically instantaneous disappearance of the superconductivity

  11. Picosecond charge transport in rutile at high carrier densities studiedby transient terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Zajac, Vít; Němec, Hynek; Kužel, Petr

    2016-01-01

    Roč. 94, č. 11 (2016), 1-9, č. článku 115206. ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Institutional support: RVO:68378271 Keywords : terahertz spectroscopy * charge transport * TiO 2 * rutile * ultrafast spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  12. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    International Nuclear Information System (INIS)

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei

    2014-01-01

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T −γ ) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced

  13. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2014-12-07

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T{sup −γ}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

  14. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  15. High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

    2015-10-01

    We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

  16. Solid state cloaking for electrical charge carrier mobility control

    Science.gov (United States)

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  17. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  18. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  19. Hot Charge Carrier Transmission from Plasmonic Nanostructures

    Science.gov (United States)

    Christopher, Phillip; Moskovits, Martin

    2017-05-01

    Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes—processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal-semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases.

  20. Charge-carrier mobilities in disordered semiconducting polymers: effects of carrier density and electric field [refereed

    NARCIS (Netherlands)

    Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, de D.M.; Michels, M.A.J.

    2006-01-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solns. of the Master equation, we study the dependence of the charge-carrier mobility

  1. Charge-carrier mobilities in disordered semiconducting polymers : effects of carrier density and electric field

    NARCIS (Netherlands)

    Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, D.M. de; Michels, M.A.J.

    2006-01-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier

  2. Importance of polaron effects for charge carrier mobility above and ...

    Indian Academy of Sciences (India)

    It is shown that the scattering of polaronic charge carriers and bosonic Cooper pairs at acoustic and optical phonons are responsible for the charge carrier mobility above and below the PG temperature. We show that the energy scales of the binding energies of large polarons and polaronic Cooper pairs can be identified by ...

  3. Enhancement of charge carrier recombination efficiency by utilizing a hole-blocking interlayer in white OLEDs

    International Nuclear Information System (INIS)

    Wang Qi; Yu Junsheng; Zhao Juan; Li Ming; Lu Zhiyun

    2013-01-01

    Charge carrier balance and recombination are essential factors relating to the performance of white organic light-emitting devices (WOLEDs). In this study, we discussed the contribution of charge carrier balance in the interlayer-based WOLEDs. By varying the interlayer thickness, the mechanisms of electroluminescent spectral alteration, energy transfer, and especially, charge carrier transport and balance in the devices were investigated and revealed in detail. With a 5 nm thick interlayer tailoring charge carrier transport and recombination, WOLEDs yielded a high power efficiency, current efficiency and external quantum efficiency of 36.1 lm W −1 , 47.1 cd A −1 and 18.3%, respectively. Additionally, single-carrier devices and quantitative analysis were subsequently carried out, demonstrating that the enhancement of carrier recombination efficiency corresponds to the optimization of device performance. (paper)

  4. Charge Carrier Transport Properties of Vacuum Evaporated Anthrylvinylbenzene Thin Films

    Directory of Open Access Journals (Sweden)

    Haikel HRICHI

    2014-05-01

    Full Text Available The charge carrier conduction processes and dielectric properties of two new materials based on anthracene core structure, 1-(9 anthrylvinyl-4-benzyloxybenzene (AVB and 1,4- bis(9-anthrylvinylbenzene (AV2B diodes have been investigated using dc current density–voltage (J–V and AC impedance spectroscopy (100 Hz–10 MHz. The DC electrical properties of ITO/anthracene derivative /Al device showing an ohmic behavior at low voltages and switches to space charge limited current (SCLC conduction with exponential trap distribution at higher voltages. The best performance device was achieved from ITO/AVB/Al structure showing the high charge carrier mobility which has also been evaluated from SCLC as 6.55´10-6 cm/Vs. According to the impedance spectroscopy results the structures were modeled by equivalent circuit designed as a parallel resistor Rp and capacitor Cp network in series with resistor Rs. The evolution of the electrical parameters with frequency and bias voltage of these anthracene-based systems has been discussed. The conductivity s(w evolution with frequency and bias voltage was studied for ITO/anthracene derivatives/Al devices. The dc conductivity sdc for these devices has been determined. The ac conductivity sac showed a variation in angular frequency as A.ws with a critical exponent s< 1 suggesting a hopping conduction mechanism at high frequency.

  5. Charge-carrier dynamics and Coulomb effects in semiconductor tetrapods

    International Nuclear Information System (INIS)

    Mauser, Christian

    2011-01-01

    charge carriers were additionally studied at high excitation energies. An efficient multi-exciton emission of the CdSe/CdS tetrapods could be observed, which is to be lead back to the exciton phase-space filling and a reduced Auger effect. The larger volume of the longer tetrapods allows a dual emission from the CdSe and the CdS with comparable intensities. The occuring Coulomb effects between a spatially separated electron-hole pair were studied in CdSe/CdTe tetrapods, which exhibit a type-II transition. A correlation between the tetrapod leg length and the binding energy of the charge-transfer exciton could be established, which is also reproduced in the theoretical simulations.

  6. Magnetic Generation due to Mass Difference between Charge Carriers

    OpenAIRE

    Chen, Shi; Dan, JiaKun; Chen, ZiYu; Li, JianFeng

    2013-01-01

    The possibility of spontaneous magnetization due to the "asymmetry in mass" of charge carriers in a system is investigated. Analysis shows that when the masses of positive and negative charge carriers are identical, no magnetization is predicted. However, if the masses of two species are different, spontaneous magnetic field would appear, either due to the equipartition of magnetic energy or due to fluctuations together with a feedback mechanism. The conditions for magnetization to occur are ...

  7. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  8. Mobility of charge carriers in porous silicon layers

    International Nuclear Information System (INIS)

    Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2008-01-01

    The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption

  9. One-carrier free space charge motion under applied voltage

    Energy Technology Data Exchange (ETDEWEB)

    de ALMEIDA, L E.C.; FERREIRA, G F.L. [SAO PAULO UNIV., SAO CARLOS (BRAZIL). INSTITUTO DE FISICA E QUIMICA

    1975-12-01

    It is shown how to transform the system of partial differential equations, describing the free one-carrier space charge motion in solid dielectrics under a given applied voltage and while the charge distribution touches only one of the electrodes, into a first order ordinary differential equation from whose solution all the interesting quantities may be easily derived. It was found that some charge distributions can display current reversal.

  10. Charge carrier transport mechanisms in nanocrystalline indium oxide

    International Nuclear Information System (INIS)

    Forsh, E.A.; Marikutsa, A.V.; Martyshov, M.N.; Forsh, P.A.; Rumyantseva, M.N.; Gaskov, A.M.; Kashkarov, P.K.

    2014-01-01

    The charge transport properties of nanocrystalline indium oxide (In 2 O 3 ) are studied. A number of nanostructured In 2 O 3 samples with various nanocrystal sizes are prepared by sol–gel method and characterized using various techniques. The mean nanocrystals size varies from 7–8 nm to 18–20 nm depending on the conditions of their preparation. Structural characterizations of the In 2 O 3 samples are performed by means of transmission electron microscopy and X-ray diffraction. The analysis of dc and ac conductivity in a wide temperature range (T = 50–300 K) shows that at high temperatures charge carrier transport takes place over conduction band and at low temperatures a variable range hopping transport mechanism can be observed. We find out that the temperature of transition from one mechanism to another depends on nanocrystal size: the transition temperature rises when nanocrystals are bigger in size. The average hopping distance between two sites and the activation energy are calculated basing on the analysis of dc conductivity at low temperature. Using random barrier model we show a uniform hopping mechanism taking place in our samples and conclude that nanocrystalline In 2 O 3 can be regarded as a disordered system. - Highlights: • In 2 O 3 samples with various nanocrystal sizes are prepared by sol–gel method. • The mean nanocrystal size varies from 7–8 nm to 18–20 nm. • At high temperatures charge carrier transport takes place over conduction band. • At low temperatures a variable range hopping transport mechanism can be observed. • We show a uniform hopping mechanism taking place in our samples

  11. Study of Charge Carrier Transport in GaN Sensors

    Science.gov (United States)

    Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas

    2016-01-01

    Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects. PMID:28773418

  12. Charge carrier coherence and Hall effect in organic semiconductors

    Science.gov (United States)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  13. Charge carrier coherence and Hall effect in organic semiconductors.

    Science.gov (United States)

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  14. Charge carrier relaxation model in disordered organic semiconductors

    International Nuclear Information System (INIS)

    Lu, Nianduan; Li, Ling; Sun, Pengxiao; Liu, Ming

    2013-01-01

    The relaxation phenomena of charge carrier in disordered organic semiconductors have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the pure hopping transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results reveal that the increase of electric field and temperature can promote the relaxation effect in disordered organic semiconductors, while the increase of material disorder will weaken the relaxation. The proposed model can explain well the stretched-exponential law by adopting the appropriate parameters. The calculation shows a good agreement with the experimental data for organic semiconductors

  15. Charge Carrier Dynamics at Silver Nanocluster-Molecular Acceptor Interfaces

    KAUST Repository

    Almansaf, Abdulkhaleq

    2017-07-01

    A fundamental understanding of interfacial charge transfer at donor-acceptor interfaces is very crucial as it is considered among the most important dynamical processes for optimizing performance in many light harvesting systems, including photovoltaics and photo-catalysis. In general, the photo-generated singlet excitons in photoactive materials exhibit very short lifetimes because of their dipole-allowed spin radiative decay and short diffusion lengths. In contrast, the radiative decay of triplet excitons is dipole forbidden; therefore, their lifetimes are considerably longer. The discussion in this thesis primarily focuses on the relevant parameters that are involved in charge separation (CS), charge transfer (CT), intersystem crossing (ISC) rate, triplet state lifetime, and carrier recombination (CR) at silver nanocluster (NCs) molecular-acceptors interfaces. A combination of steady-state and femto- and nanosecond broadband transient absorption spectroscopies were used to investigate the charge carrier dynamics in various donor-acceptor systems. Additionally, this thesis was prolonged to investigate some important factors that influence the charge carrier dynamics in Ag29 silver NCs donor-acceptor systems, such as the metal doping and chemical structure of the nanocluster and molecular acceptors. Interestingly, clear correlations between the steady-state measurements and timeresolved spectroscopy results are found. In the first study, we have investigated the interfacial charge transfer dynamics in positively charged meso units of 5, 10, 15, 20-tetra (1- methyl-4-pyridino)-porphyrin tetra (p-toluene sulfonate) (TMPyP) and neutral charged 5, 10, 15, 20-tetra (4-pyridyl)-porphyrin (TPyP), with negatively charged undoped and gold (Au)- doped silver Ag29 NCs. Moreover, this study showed the impact of Au doping on the charge carrier dynamics of the system. In the second study, we have investigated the interfacial charge transfer dynamics in [Pt2 Ag23 Cl7 (PPh3

  16. Photoinduced reversible switching of charge carrier mobility in conjugated polymers

    Czech Academy of Sciences Publication Activity Database

    Weiter, M.; Navrátil, J.; Vala, M.; Toman, Petr

    2009-01-01

    Roč. 48, č. 1 (2009), 10401_1-10401_6 ISSN 1286-0042 R&D Projects: GA ČR GA203/06/0285; GA AV ČR KAN401770651 Institutional research plan: CEZ:AV0Z40500505 Keywords : polymers * switch * charge carrier mobility Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.756, year: 2009

  17. One-carrier free space charge motion under applied voltage

    International Nuclear Information System (INIS)

    Camargo, P.C.; Ferreira, G.F.L.

    1976-01-01

    The system of partial differential equations describing the one-carrier free space-charge motion under a given applied voltage is transformed into a system of two ordinary differential equations. The method is applied to find the external current injection [pt

  18. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    Science.gov (United States)

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells.

  19. Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

    Science.gov (United States)

    Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

    2017-01-01

    Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

  20. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  1. Charge carrier recombination dynamics in perovskite and polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paulke, Andreas; Kniepert, Juliane; Kurpiers, Jona; Wolff, Christian M.; Schön, Natalie; Brenner, Thomas J. K.; Neher, Dieter [Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24–25, 14476, Potsdam (Germany); Stranks, Samuel D. [Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Snaith, Henry J. [Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)

    2016-03-14

    Time-delayed collection field experiments are applied to planar organometal halide perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) based solar cells to investigate charge carrier recombination in a fully working solar cell at the nanosecond to microsecond time scale. Recombination of mobile (extractable) charges is shown to follow second-order recombination dynamics for all fluences and time scales tested. Most importantly, the bimolecular recombination coefficient is found to be time-dependent, with an initial value of ca. 10{sup −9} cm{sup 3}/s and a progressive reduction within the first tens of nanoseconds. Comparison to the prototypical organic bulk heterojunction device PTB7:PC{sub 71}BM yields important differences with regard to the mechanism and time scale of free carrier recombination.

  2. Influence of packing motives on charge Carrier mobility in perylene tetracarboxdiimide derivatives

    Energy Technology Data Exchange (ETDEWEB)

    May, Falk; Andrienko, Denis [Max-Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Center of Smart Interfaces, Darmstadt (Germany)

    2010-07-01

    Discotic mesophases are known for their ability to self-assemble into columnar structures and can serve as semiconducting molecular wires. Charge carrier mobility along these wires strongly depends on molecular packing which is controlled by intermolecular interactions. In this work we compare the influence of side chains on the packing motives of perylene tetracarboxdiimide (PDI) derivatives. Two different (alkyl and glycol) side chains are considered. We first establish how the packing of side chains affects the molecular orientation within the columns using molecular dynamics. Then, using the high temperature non-adiabatic limit of Marcus theory for hopping rates and solving the rate equation for charge transport, we analyze the link between the secondary structure and charge carrier mobility. This analysis eventually provides a pathway to rational design of columnar assemblies of PDI derivatives with high charge mobilities.

  3. Ab initio theory of charge-carrier conduction in ultrapure organic crystals

    NARCIS (Netherlands)

    Hannewald, K.; Bobbert, P.A.

    2004-01-01

    We present an ab initio description of charge-carrier mobilities in organic molecular crystals of high purity. Our approach is based on Holstein's original concept of small-polaron bands but generalized with respect to the inclusion of nonlocal electron-phonon coupling. By means of an explicit

  4. Charge-carrier transport in large-area epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kisslinger, Ferdinand; Popp, Matthias; Weber, Heiko B. [Lehrstuhl fuer Angewandte Physik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Jobst, Johannes [Huygens-Kamerlingh Onnes Laboratorium, Leiden Institute of Physics, Leiden University (Netherlands); Shallcross, Sam [Lehrstuhl fuer theoretische Festkoerperphysik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany)

    2017-11-15

    We present an overview of recent charge carrier transport experiments in both monolayer and bilayer graphene, with emphasis on the phenomena that appear in large-area samples. While many aspects of transport are based on quantum mechanical concepts, in the large-area limit classical corrections dominate and shape the magnetoresistance and the tunneling conductance. The discussed phenomena are very general and can, with little modification, be expected in any atomically thin 2D conductor. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Electronic structure of charge carriers in a polysilane quantum wire

    International Nuclear Information System (INIS)

    Kumagai, J.; Yoshida, H.; Ichikawa, T.

    1997-01-01

    The ESR, ESEEM and spectrophotometric studies on polysilane radical ions revealed that charge carriers, hole and conducting electrons, are not delocalized all over the Si-Si main chain but confined to a part of the chain composed of only six Si atoms, probably near the branch on the main chain. Comparison of the ESR spectra of the radical cations and anions revealed that the hole can migrate from the main chain to an adjacent polymer chain via the side chains, whereas the conducting electron can not migrate since the side chains act as good intermolecular insulators for the electron. (author)

  6. Pressure dependence of excited-state charge-carrier dynamics in organolead tribromide perovskites

    Science.gov (United States)

    Liu, X. C.; Han, J. H.; Zhao, H. F.; Yan, H. C.; Shi, Y.; Jin, M. X.; Liu, C. L.; Ding, D. J.

    2018-05-01

    Excited-state charge-carrier dynamics governs the performance of organometal trihalide perovskites (OTPs) and is strongly influenced by the crystal structure. Characterizing the excited-state charge-carrier dynamics in OTPs under high pressure is imperative for providing crucial insights into structure-property relations. Here, we conduct in situ high-pressure femtosecond transient absorption spectroscopy experiments to study the excited-state carrier dynamics of CH3NH3PbBr3 (MAPbBr3) under hydrostatic pressure. The results indicate that compression is an effective approach to modulate the carrier dynamics of MAPbBr3. Across each pressure-induced phase, carrier relaxation, phonon scattering, and Auger recombination present different pressure-dependent properties under compression. Responsiveness is attributed to the pressure-induced variation in the lattice structure, which also changes the electronic band structure. Specifically, simultaneous prolongation of carrier relaxation and Auger recombination is achieved in the ambient phase, which is very valuable for excess energy harvesting. Our discussion provides clues for optimizing the photovoltaic performance of OTPs.

  7. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy

    Science.gov (United States)

    Ponseca, C. S., Jr.; Sundström, V.

    2016-03-01

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  8. Control of charge carrier dynamics in disordered conjugated polymers

    Energy Technology Data Exchange (ETDEWEB)

    Hertel, Dirk [Physical Chemistry, University of Cologne, Luxemburgerstr. 116, 50939 Cologne, Germany, (Germany)

    2011-07-01

    We developed a new method to probe charge carrier mobility on ultrafast time scale. It is based on electric field induced second harmonic generation. The method is applied to prototypical amorphous conjugated polymers of the polyphenylene- and polyfluorene-type. Typically the carrier mobility in these organic polymers decreases with time in a power law fashion from about 1 cm{sup 2}Vs{sup -1} at 1 ps to its stationary value of about 10{sup -6} cm{sup 2}Vs{sup -1} in hundreds of ns. The dynamics of the mobility is discussed. It is shown, that in nanoscale devices the macroscopic mobility is not adequate to describe charge transport. We study the influence of disorder, morphology and temperature on ultrafast transport. At early times the transport is dominated by tunneling and disorder plays already an essential role. Comparison of transient photocurrents with Monte-Carlo simulation reveals that on-chain transport has to be invoked to rationalize our results. The hopping rates for intrachain transport are much larger compared with interchain transport. The results give access to essential transport properties for the development of advanced theoretical models and may help to design improved solar cells.

  9. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    values extracted from OPTP measurements and their dependence on perovskite composition and morphology. The significance of the reviewed charge-carrier recombination and mobility parameters is subsequently evaluated in terms of the charge-carrier diffusion lengths and radiative efficiencies that may be obtained for such hybrid perovskites. We particularly focus on calculating such quantities in the limit of ultra-low trap-related recombination, which has not yet been demonstrated but could be reached through further advances in material processing. We find that for thin films of hybrid lead iodide perovskites with typical charge-carrier mobilities of ∼30cm(2)/(V s), charge-carrier diffusion lengths at solar (AM1.5) irradiation are unlikely to exceed ∼10 μm even if all trap-related recombination is eliminated. We further examine the radiative efficiency for hybrid lead halide perovskite films and show that if high efficiencies are to be obtained for intermediate charge-carrier densities (n ≈ 10(14) cm(-3)) trap-related recombination lifetimes will have to be enhanced well into the microsecond range.

  10. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  11. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  12. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fengjiao [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Dai, Xiaojuan [Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China; Zhu, Weikun [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Chung, Hyunjoong [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Diao, Ying [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA

    2017-05-10

    Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

  13. A Low-Energy-Gap Thienochrysenocarbazole Dye for Highly Efficient Mesoscopic Titania Solar Cells: Understanding the Excited State and Charge Carrier Dynamics.

    Science.gov (United States)

    Wang, Junting; Xie, Xinrui; Weng, Guorong; Yuan, Yi; Zhang, Jing; Wang, Peng

    2018-05-09

    Maintaining both a high external quantum efficiency and a large open-circuit photovoltage of dye-sensitized solar cells (DSSCs) is a crucial challenge in the process of developing narrow-energy-gap dyes for the capture of infrared solar photons. Herein, we report two donor-acceptor organic dyes, C294 and C295, with a polycyclic heteroaromatic unit, 6,11-dihydrothieno[3',2':8,9]chryseno[10,11,12,1-bcdefg]carbazole (TCC), as the central module of the electron donor, and ethylbenzothiadiazole-benzioc acid as the electron acceptor. The interfacial charge recombination was successfully mitigated by introducing an additional branched aliphatic chain in C295. Furthermore, the O⋅⋅⋅S nonbonding interaction between the oxygen atom of the alkoxy group and the sulfur atom of the thiophene in C295 controlled the conformation of C295, resulting in a narrow energy-gap. Time-resolved spectroscopic measurements on C294 and the model dye C272 indicated that the elevation of the HOMO energy level decreased the kinetics and yield of hole injection owing to a reduction in the driving force and that the shortened excited-state lifetime caused by the narrowing of the energy gap was unfavorable for electron injection. By fine tuning the composition of the electrolyte, C294 and C295 eventually achieved high power conversion efficiencies of 11.5 % and 12.4 %, respectively, under full sunlight of air mass 1.5 global conditions. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  15. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    Science.gov (United States)

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

  16. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

    2015-01-01

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  17. Drift of charge carriers in crystalline organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Jingjuan; Si, Wei [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Wu, Chang-Qin, E-mail: cqw@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China)

    2016-04-14

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10{sup 5} V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

  18. New Copolymers Containing Charge Carriers for Organic Devices with ITO Films Treated by UV-Ozone Using High Intensity Discharge Lamp

    Directory of Open Access Journals (Sweden)

    Emerson Roberto SANTOS

    2009-02-01

    Full Text Available For electroluminescent devices new copolymers were synthesized using a Suzuki cross-coupling reaction based on monomers (fluorine-alt-phenylene in conjugation with quinoline-alt-phenylene units. They were characterized by 1H NMR, 13C NMR and FTIR. TGA measurements indicated that the copolymers have good thermal properties and no weight loss was observed up to 250 °C. The UV-Vis spectra were characterized by absorptions from the fluorene-alt-phenylene and quinoline-alt-phenylene segments in the backbone, while their photoluminescence (PL spectra dominated by emissions from the fluorene excimer. For devices assembly ITO films were treated using a High Intensity Discharge Lamp (HPMVL without outer bulb presenting high ozone concentration than that conventional germicidal lamp. The device with ITO treated revealed significant decrease of threshold voltage (or turn-on voltage compared by untreated with I-V curves. This decrease can be related by water and carbon dioxide extracted on surface after UV-Ozone treatment revealed by DRIFT measurements.

  19. Origin of long lifetime of band-edge charge carriers in organic-inorganic lead iodide perovskites.

    Science.gov (United States)

    Chen, Tianran; Chen, Wei-Liang; Foley, Benjamin J; Lee, Jooseop; Ruff, Jacob P C; Ko, J Y Peter; Brown, Craig M; Harriger, Leland W; Zhang, Depei; Park, Changwon; Yoon, Mina; Chang, Yu-Ming; Choi, Joshua J; Lee, Seung-Hun

    2017-07-18

    Long carrier lifetime is what makes hybrid organic-inorganic perovskites high-performance photovoltaic materials. Several microscopic mechanisms behind the unusually long carrier lifetime have been proposed, such as formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling. Here, we show that the screening of band-edge charge carriers by rotation of organic cation molecules can be a major contribution to the prolonged carrier lifetime. Our results reveal that the band-edge carrier lifetime increases when the system enters from a phase with lower rotational entropy to another phase with higher entropy. These results imply that the recombination of the photoexcited electrons and holes is suppressed by the screening, leading to the formation of polarons and thereby extending the lifetime. Thus, searching for organic-inorganic perovskites with high rotational entropy over a wide range of temperature may be a key to achieve superior solar cell performance.

  20. Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

    Directory of Open Access Journals (Sweden)

    Y.O. Uhryn

    2017-12-01

    Full Text Available Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equations usage the conductor, semiconductor and superconductor have been introduced. From the obtained temperature dependences of the aforementioned values in superconductor, a supposition of a deciding role of minority charge carriers in the emergence of superconductivity state has been made.

  1. Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation

    Science.gov (United States)

    Rustagi, Avinash; Stanton, C. J.

    2016-11-01

    We study the generation of terahertz (THz) radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a dc electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation (BTE) within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the optical Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the kx-ky plane. The collision integral in the Boltzmann equation includes a term that leads to the thermalization of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a cooling term, which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the direction of velocity of the photoexcited carriers in the external electric field as well as cooling of the photoexcited carriers on a subpicosecond time scale.

  2. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    Science.gov (United States)

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

  3. Recombination of charge carriers in the GaAs-based p-i-n diode

    International Nuclear Information System (INIS)

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-01-01

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  4. Electrical control of charged carriers and excitons in atomically thin materials

    Science.gov (United States)

    Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

    2018-02-01

    Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

  5. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

    2017-03-31

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

  6. Mobility of delocalized charge carriers in an ideal homopolar glass as a function of temperature

    International Nuclear Information System (INIS)

    Iskra, V.D.

    1986-01-01

    The relationship between temperature and the mobility of delocalized charge carriers for an intrinsic random field of a homopolar glass is investigated through application of a method of scattering amplitude calculation based on employing short-lived potential factorization

  7. Importance of polaron effects for charge carrier mobility above and ...

    Indian Academy of Sciences (India)

    Orifjon Ganiev

    2017-05-30

    May 30, 2017 ... sizes and effective masses are large polarons. According ... nating metallic and insulating domains with mobile ... The mobile polaronic carriers are con- ..... [51] T Kondo, Y Hamaya, A D Palczewski, T Takeuchi, J S Wen,.

  8. Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

    Science.gov (United States)

    Mäckel, Helmut; MacKenzie, Roderick C. I.

    2018-03-01

    Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

  9. Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

    Science.gov (United States)

    Heiber, Michael C.; Kister, Klaus; Baumann, Andreas; Dyakonov, Vladimir; Deibel, Carsten; Nguyen, Thuc-Quyen

    2017-11-01

    The impact of the tortuosity of the charge-transport pathways through a bulk heterojunction film on the charge-carrier mobility is theoretically investigated using model morphologies and kinetic Monte Carlo simulations. The tortuosity descriptor provides a quantitative metric to characterize the quality of the charge-transport pathways, and model morphologies with controlled domain size and tortuosity are created using an anisotropic domain growth procedure. The tortuosity is found to be dependent on the anisotropy of the domain structure and is highly tunable. Time-of-flight charge-transport simulations on morphologies with a range of tortuosity values reveal that tortuosity can significantly reduce the magnitude of the mobility and the electric-field dependence relative to a neat material. These reductions are found to be further controlled by the energetic disorder and temperature. Most significantly, the sensitivity of the electric-field dependence to the tortuosity can explain the different experimental relationships previously reported, and exploiting this sensitivity could lead to simpler methods for characterizing and optimizing charge transport in organic solar cells.

  10. Recombination in liquid filled ionisation chambers with multiple charge carrier species: Theoretical and numerical results

    International Nuclear Information System (INIS)

    Aguiar, P.; González-Castaño, D.M.; Gómez, F.; Pardo-Montero, J.

    2014-01-01

    Liquid-filled ionisation chambers (LICs) are used in radiotherapy for dosimetry and quality assurance. Volume recombination can be quite important in LICs for moderate dose rates, causing non-linearities in the dose rate response of these detectors, and needs to be corrected for. This effect is usually described with Greening and Boag models for continuous and pulsed radiation respectively. Such models assume that the charge is carried by two different species, positive and negative ions, each of those species with a given mobility. However, LICs operating in non-ultrapure mode can contain different types of electronegative impurities with different mobilities, thus increasing the number of different charge carriers. If this is the case, Greening and Boag models can be no longer valid and need to be reformulated. In this work we present a theoretical and numerical study of volume recombination in parallel-plate LICs with multiple charge carrier species, extending Boag and Greening models. Results from a recent publication that reported three different mobilities in an isooctane-filled LIC have been used to study the effect of extra carrier species on recombination. We have found that in pulsed beams the inclusion of extra mobilities does not affect volume recombination much, a behaviour that was expected because Boag formula for charge collection efficiency does not depend on the mobilities of the charge carriers if the Debye relationship between mobilities and recombination constant holds. This is not the case in continuous radiation, where the presence of extra charge carrier species significantly affects the amount of volume recombination. - Highlights: • Analytical extension of Greening and Boag theories to multiple charge carriers. • Detailed numerical study of process of volume recombination in LICs. • Recombination in pulsed beams is independent of number and mobilities of carriers. • Multiple charge carriers have a significant effect in continuous

  11. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    Science.gov (United States)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  12. Sensitized charge carrier injection into organic crystals studied by isotope effects in weak magnetic fields

    International Nuclear Information System (INIS)

    Bube, W.; Michel-Beyerle, M.E.; Haberkorn, R.; Steffens, E.

    1977-01-01

    The magnetic field (H approximately 50 Oe) dependence of the rhodamine sensitized triplet exciton density in anthracene crystals is influenced by isotopic substitution. This confirms the hyperfine interaction as mechanism explaining the change of the spin multiplicity in the initially formed singlet state of the radical pair. The isotope effect occurs in the sensitizing dye ( 14 N/ 15 N) rather than at the molecular site of the injected charge within the crystal. This can be understood in terms of the high hopping frequency of the charge carriers as compared to the time constant of the hyperfine induced singlet-triplet transition. Since the dye molecules adsorb in an oriented fashion, the angular dependence of the magnetic field modulation of the triplet exciton density can be interpreted without assuming any additional interactions. (Auth.)

  13. Investigating Recombination and Charge Carrier Dynamics in a One-Dimensional Nanopillared Perovskite Absorber.

    Science.gov (United States)

    Kwon, Hyeok-Chan; Yang, Wooseok; Lee, Daehee; Ahn, Jihoon; Lee, Eunsong; Ma, Sunihl; Kim, Kyungmi; Yun, Seong-Cheol; Moon, Jooho

    2018-05-22

    Organometal halide perovskite materials have become an exciting research topic as manifested by intense development of thin film solar cells. Although high-performance solar-cell-based planar and mesoscopic configurations have been reported, one-dimensional (1-D) nanostructured perovskite solar cells are rarely investigated despite their expected promising optoelectrical properties, such as enhanced charge transport/extraction. Herein, we have analyzed the 1-D nanostructure effects of organometal halide perovskite (CH 3 NH 3 PbI 3- x Cl x ) on recombination and charge carrier dynamics by utilizing a nanoporous anodized alumina oxide scaffold to fabricate a vertically aligned 1-D nanopillared array with controllable diameters. It was observed that the 1-D perovskite exhibits faster charge transport/extraction characteristics, lower defect density, and lower bulk resistance than the planar counterpart. As the aspect ratio increases in the 1-D structures, in addition, the charge transport/extraction rate is enhanced and the resistance further decreases. However, when the aspect ratio reaches 6.67 (diameter ∼30 nm), the recombination rate is aggravated due to high interface-to-volume ratio-induced defect generation. To obtain the full benefits of 1-D perovskite nanostructuring, our study provides a design rule to choose the appropriate aspect ratio of 1-D perovskite structures for improved photovoltaic and other optoelectrical applications.

  14. Charge transport in disordered organic host-guest systems: effects of carrier density and electric field

    NARCIS (Netherlands)

    Yimer, Y.Y.; Bobbert, P.A.; Coehoorn, R.

    2008-01-01

    We investigate charge transport in disordered organic host–guest systems with a bimodal Gaussian density of states (DOS). The energy difference between the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice with site

  15. Charge transport in disordered organic host-guest systems: effects of carrier density and electric field

    NARCIS (Netherlands)

    Yimer, Y.Y.; Bobbert, P.A.; Coehoorn, R.

    2009-01-01

    We investigate charge transport in disordered organic host–guest systems with a bimodal Gaussian density of states. The energy difference between the peaks of the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice we

  16. Study of charge-carrier relaxation in a disordered organic semiconductor by simulating impedance spectroscopy

    NARCIS (Netherlands)

    Mesta, M.; Cottaar, J.; Coehoorn, R.; Bobbert, P.A.

    2014-01-01

    Impedance spectroscopy is a very sensitive probe of nonstationary charge transport governed by charge-carrier relaxation in devices of disordered organic semiconductors. We simulate impedance spectroscopy measurements of hole-only devices of a polyfluorene-based disordered organic semiconductor by

  17. The state of itinerant charge carriers and thermoelectric effects in correlated oxide metals

    International Nuclear Information System (INIS)

    Kuzemsky, A.L.; Abdus Salam International Centre for Theoretical Physics, Trieste

    2000-10-01

    We analyzed the physics of transport processes and, in particular, the thermoelectric power in the mercurocuprates and other cuprates to get a better insight into the state of the carriers in these compounds. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed. The experimental studies of thermoelectric power showed that the state of carriers in cuprates can be influenced by many complicated scattering processes, however the underlying mechanism for the linear decreasing of the TEP with increasing the temperature for most hole-doped HTSC cuprates is still not yet known. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed for a few models of charge transport. A comparison between the analytical and experimental results is also made. It is concluded that the crucial factor for the understanding of the transport properties of correlated oxide metals is the nature of itinerant charge carriers, i.e. renormalized quasiparticles. (author)

  18. Drift of nonequilibrium charge carriers in GaAs-crystals with traps in ultrasonic fields

    International Nuclear Information System (INIS)

    Zaveryukhina, N.N.; Zaveryukhin, B.N.; Zaveryukhina, E.B.

    2007-01-01

    Full text: The drift of nonequilibrium charge carriers in a semiconductor is one of the basic processes determining the efficiency of semiconductor photodetectors. Gallium arsenide possesses certain advantages to other semiconductors in this respect, which allow GaAs-photodetectors to be obtained which possess the maximum efficiency in comparison with all other systems. The purpose of this study was to deepen and expand our knowledge about the acoustic-drift processes in GaAs- crystals. As is known, the drift of nonequilibrium charge carriers in a semiconductor is determined either by external electric fields and/or by internal (built-in) electrostatic fields related to an impurity concentration gradient in the semiconductor. Gallium arsenide is a piezoelectric semiconductor with a structure possessing no center of symmetry. An electric field applied to such a crystal produces deformation of the crystal, and vice versa, any deformation of the crystal leads to the appearance of an induced electric field. Therefore, investigation of the effect of deformation on the drift of nonequilibrium charge carriers is a very important task. One of the possible straining factors is ultrasonic wave. Interaction of the charge carriers with ultrasonic waves in piezo-semiconductors is mediated by piezo exertion. Straining a semiconductor by an ultrasonic wave field gives rise to a force acting upon the charge carriers, which is proportional to the wave vector and the piezoelectric constant of the crystal. The physics of interaction between an ultrasonic wave and nonequilibrium charge carriers in GaAs, as well as in non-polar semiconductors (Si, Ge), consists in the energy and momentum exchange between the wave and the carriers. Besides the ultrasonic waves interact with the traps of carriers and devastate them. These both acoustic effects lead to rise of amplitude of signal of GaAs-photodetectors. (authors)

  19. Charge-reversal nanoparticles: novel targeted drug delivery carriers.

    Science.gov (United States)

    Chen, Xinli; Liu, Lisha; Jiang, Chen

    2016-07-01

    Spurred by significant progress in materials chemistry and drug delivery, charge-reversal nanocarriers are being developed to deliver anticancer formulations in spatial-, temporal- and dosage-controlled approaches. Charge-reversal nanoparticles can release their drug payload in response to specific stimuli that alter the charge on their surface. They can elude clearance from the circulation and be activated by protonation, enzymatic cleavage, or a molecular conformational change. In this review, we discuss the physiological basis for, and recent advances in the design of charge-reversal nanoparticles that are able to control drug biodistribution in response to specific stimuli, endogenous factors (changes in pH, redox gradients, or enzyme concentration) or exogenous factors (light or thermos-stimulation).

  20. Poly(silylene)s: Charge carrier photogeneration and transport

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Eckhardt, A.

    2001-01-01

    Roč. 12, č. 7 (2001), s. 427-440 ISSN 1042-7147 R&D Projects: GA AV ČR IAA4050603; GA AV ČR IAA1050901; GA AV ČR KSK4050111 Institutional research plan: CEZ:AV0Z4050913 Keywords : charge photogeneration * charge-transfer * ion-pair Subject RIV: CC - Organic Chemistry Impact factor: 0.701, year: 2001

  1. Supermolecular structure and charge carriers mobilities of perylene diimides

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, Valentina; Pisula, Wojtek; Andrienko, Denis [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany); Kirkpatrick, James [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany); Department of Physics, Imperial College London, London (United Kingdom)

    2008-07-01

    Perylene diimides form columnar phases, where the molecules stack on top of each other and the columns arrange in a regular lattice. The self-organization into well-ordered columns results in the one-dimensional charge transport along the stack of the aromatic cores of the molecules. Most of the discotic molecules which organize in columns are p-type semiconductors, while the class of rylene diimide molecules, to which perylene belongs, forms n-type organic semiconductors. Using atomistic molecular dynamics (MD) simulations we study the columnar phases of perylene diimides and establish correlations between the molecular structure, packing, and dynamical properties of these materials. By using a scheme which combines electronic structure calculations, MD and kinetic Monte Carlo simulations, a correlation is then established between the molecular structure and charge mobility of perylenes columnar mesophases.

  2. Limitations of high dose carrier based formulations.

    Science.gov (United States)

    Yeung, Stewart; Traini, Daniela; Tweedie, Alan; Lewis, David; Church, Tanya; Young, Paul M

    2018-06-10

    This study was performed to investigate how increasing the active pharmaceutical ingredient (API) content within a formulation affects the dispersion of particles and the aerosol performance efficiency of a carrier based dry powder inhalable (DPI) formulation, using a custom dry powder inhaler (DPI) development rig. Five formulations with varying concentrations of API beclomethasone dipropionate (BDP) between 1% and 30% (w/w) were formulated as a multi-component carrier system containing coarse lactose and fine lactose with magnesium stearate. The morphology of the formulation and each component were investigated using scanning electron micrographs while the particle size was measured by laser diffraction. The aerosol performance, in terms of aerodynamic diameter, was assessed using the British pharmacopeia Apparatus E cascade impactor (Next generation impactor). Chemical analysis of the API was observed by high performance liquid chromatography (HPLC). Increasing the concentration of BDP in the blend resulted in increasing numbers and size of individual agglomerates and densely packed BDP multi-layers on the surface of the lactose carrier. BDP present within the multi-layer did not disperse as individual primary particles but as dense agglomerates, which led to a decrease in aerosol performance and increased percentage of BDP deposition within the Apparatus E induction port and pre-separator. As the BDP concentration in the blends increases, aerosol performance of the formulation decreases, in an inversely proportional manner. Concurrently, the percentage of API deposition in the induction port and pre-separator could also be linked to the amount of micronized particles (BDP and Micronized composite carrier) present in the formulation. The effect of such dose increase on the behaviour of aerosol dispersion was investigated to gain greater insight in the development and optimisation of higher dosed carrier-based formulations. Copyright © 2018 Elsevier B.V. All

  3. Temperature Dependence of Charge Localization in High-Mobility, Solution-Crystallized Small Molecule Semiconductors Studied by Charge Modulation Spectroscopy

    DEFF Research Database (Denmark)

    Meneau, Aurélie Y. B.; Olivier, Yoann; Backlund, Tomas

    2016-01-01

    In solution-processable small molecule semiconductors, the extent of charge carrier wavefunction localization induced by dynamic disorder can be probed spectroscopically as a function of temperature using charge modulation spectroscopy (CMS). Here, it is shown based on combined fi eld-effect tran......In solution-processable small molecule semiconductors, the extent of charge carrier wavefunction localization induced by dynamic disorder can be probed spectroscopically as a function of temperature using charge modulation spectroscopy (CMS). Here, it is shown based on combined fi eld......-effect transistor and CMS measurements as a function of temperature that in certain molecular semiconductors, such as solution-processible pentacene, charge carriers become trapped at low temperatures in environments in which the charges become highly localized on individual molecules, while in some other molecules...

  4. Magnetic susceptibility of free charge carriers in bismuth tellurides (Bi2Te3)

    International Nuclear Information System (INIS)

    Guha Thakurta, S.R.; Dutta, A.K.

    1977-01-01

    Principal magnetic susceptibilities of both p- and n-type Bi 2 Te 3 crystals have been measured over the range of temperature 90 deg K to 650 deg K. The observed susceptibilities are diamagnetic and temperature dependent. This temperature dependence has been attributed to the contribution of the free charge carriers to the susceptibilities. From the observed susceptibilities the carrier-susceptibilities have been separately obtained which are found to be paramagnetic. From the total carrier-susceptibilities, the susceptibilities of the carriers which are thermally liberated in the intrinsic region have been separated. From an analysis of the carrier-susceptibilities the band gap and its temperature coefficient have been found out and these compare favourably with those obtained from electrical measurements. (author)

  5. Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

    International Nuclear Information System (INIS)

    Vasiliev, Roman B; Dirin, Dmitry N; Gaskov, Alexander M

    2011-01-01

    The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron–hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

  6. Hopping mobility of charge carriers in polymers in the earliest stages after their generation

    International Nuclear Information System (INIS)

    Tyutnev, A.P.; Subbotin, A.V.; Chekunaev, N.I.

    1989-01-01

    It has been found that both the photo- and the radiation conductivity of a number of polymers (primarily polyvinylcarbazole, polystyrene, and polyethylene terephthalate) are of a molecular nature, and movement of the generated charge carriers is by a hopping and not by a band mechanism. Analytical expressions for the instantaneous effective mobility and effective displacement of charge carriers in a unitary electric field were obtained in the approximation of isolated pairs of nearest neighbors for four species (monoenergetic, exponential, Gaussian, and bilevel) of energy application of hopping sites randomly distributed in space. Problems of the application of these expressions to real polymers are discussed on the example of polyvinylcarbazole

  7. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    International Nuclear Information System (INIS)

    Murthy, D H K; Houtepen, A J; Savenije, T J; Siebbeles, L D A; Xu, T; Nys, J P; Krzeminski, C; Grandidier, B; Stievenard, D; Chen, W H; Pareige, P; Jomard, F; Patriarche, G; Lebedev, O I

    2011-01-01

    by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

  8. Photogeneration of free charge carriers in .pi.-conjugated polymers with bulky side groups

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Jex, M.; Pfleger, Jiří; Jung, J.

    2012-01-01

    Roč. 404, 24 August (2012), s. 48-55 ISSN 0301-0104 R&D Projects: GA ČR(CZ) GAP205/10/2280; GA MŠk(CZ) OC10007 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : photogeneration of free charge carriers * charge transfer states * localized excitation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.957, year: 2012

  9. Modelling of the charge carrier mobility in disordered linear polymer materials

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr; Menšík, Miroslav; Bartkowiak, W.; Pfleger, Jiří

    2017-01-01

    Roč. 19, č. 11 (2017), s. 7760-7771 ISSN 1463-9076 R&D Projects: GA ČR(CZ) GA15-05095S Grant - others:AV ČR(CZ) M200501204 Program:M Institutional support: RVO:61389013 Keywords : charge carrier mobility * conjugated polymer * charge transport modelling Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.123, year: 2016

  10. The Welsh Single-Use Carrier Bag Charge and behavioural spillover

    OpenAIRE

    Thomas, Gregory O.; Poortinga, Wouter; Sautkina, Elena

    2016-01-01

    A Single-Use Carrier Bag Charge (SUCBC) requires bags to be sold for a small fee, instead of free of charge. SUCBCs may produce ‘spillover’ effects, where other pro-environmental attitudes and behaviours could increase or decrease. We investigate the 2011 Welsh SUCBC, and whether spillover occurs in other behaviours and attitudes. Using the Understanding Society Survey (n = 17,636), results show that use of own shopping bags increased in Wales, compared to England and Scotland. Increased use ...

  11. Electronic properties of the charge carriers on oligofluorene backbone

    International Nuclear Information System (INIS)

    Koizumi, Yoshiko; Seki, Shu; Saeki, Akinori; Tagawa, Seiichi

    2007-01-01

    The transient absorption of radical anions and cations of 9,9'-di-n-hexyl-oligofluorene was measured using pulse radiolysis and low-temperature γ-radiolysis techniques. The infrared absorption maxima of both radical anions and cations exhibit red-shift continuously upon elongation of the chain length. The absorption bands are blue-shifted by 0.04-0.07 eV with increasing the temperature from 80 to 106 K. The extinction coefficients were determined by scavenging technique, demonstrating an increase with the elongation of the chain length. The optimized geometry of fluorene trimers, calculated using density functional theory, shows that the oligofluorene molecules are more planar in its charged state than in its neutral state

  12. Mechanism of the free charge carrier generation in the dielectric breakdown

    Science.gov (United States)

    Rahim, N. A. A.; Ranom, R.; Zainuddin, H.

    2017-12-01

    Many studies have been conducted to investigate the effect of environmental, mechanical and electrical stresses on insulator. However, studies on physical process of discharge phenomenon, leading to the breakdown of the insulator surface are lacking and difficult to comprehend. Therefore, this paper analysed charge carrier generation mechanism that can cause free charge carrier generation, leading toward surface discharge development. Besides, this paper developed a model of surface discharge based on the charge generation mechanism on the outdoor insulator. Nernst’s Planck theory was used in order to model the behaviour of the charge carriers while Poisson’s equation was used to determine the distribution of electric field on insulator surface. In the modelling of surface discharge on the outdoor insulator, electric field dependent molecular ionization was used as the charge generation mechanism. A mathematical model of the surface discharge was solved using method of line technique (MOL). The result from the mathematical model showed that the behaviour of net space charge density was correlated with the electric field distribution.

  13. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components

    International Nuclear Information System (INIS)

    Grosse, Veit

    2011-01-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively σ(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10 7 ..10 8 V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  14. Theoretical modeling of influence of the structural disorder on the charge carrier mobility in triphenylene stacks

    Czech Academy of Sciences Publication Activity Database

    Mikolajczyk, M.; Toman, Petr; Bartkowiak, W.

    2010-01-01

    Roč. 485, 1-3 (2010), s. 253-257 ISSN 0009-2614 R&D Projects: GA MŠk MEB050815; GA AV ČR IAA401770601 Institutional research plan: CEZ:AV0Z40500505 Keywords : triphenylene * charge carrier mobility * tight-binding approximation Subject RIV: CD - Macromolecular Chemistry Impact factor: 2.282, year: 2010

  15. The generation of charge carriers in semi conductors – A theoretical study

    CSIR Research Space (South Africa)

    Kiarii, EM

    2017-04-01

    Full Text Available , vol. 678: 167-176 The generation of charge carriers in semi conductors – A theoretical study Kiarii EM Govender, Krishna K Ndungu PG Govender PG ABSTRACT: A systematic study of electronic and optical properties of titanium dioxide under...

  16. Free-carrier-compensated charged domain walls produced with super-bandgap illumination in insulating ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Bednyakov, Petr; Sluka, T.; Tagantsev, A.; Damjanovic, D.; Setter, N.

    2016-01-01

    Roč. 28, č. 43 (2016), s. 9498-9503 ISSN 0935-9648 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : super-bandgap illumination * charged domain walls * ferroelectric BaTiO 3 * free-carrier generation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 19.791, year: 2016

  17. Influence of injected charge carriers on photocurrents in polymer solar cells

    NARCIS (Netherlands)

    Wehenkel, D.J.; Koster, L.J.A.; Wienk, M.M.; Janssen, R.A.J.

    2012-01-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for

  18. Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

    NARCIS (Netherlands)

    Luo, H.; Bos, A.J.J.; Dorenbos, P.

    2017-01-01

    Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the

  19. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...

  20. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya

    2015-08-10

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  1. Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs

    Science.gov (United States)

    Yang, S. Y.; Liu, D.; Jiang, Y.; Teng, F.; Xu, Z.; Hou, Y.; Xu, X. R.

    2006-08-01

    Charge carriers bulk recombination instead of forming electroplex after their tunneling through a hole-blocking layer, i.e. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), in organic electroluminescence (EL) device ITO/poly-(N-vinyl-carbazole)(PVK)/BCP/tris(8-hydroxyquinoline) aluminum (Alq3)/Al is reported. By changing the thickness of BCP layer, one can find that high electric fields enhance the tunneling process of holes accumulated at the PVK/BCP interface into BCP layer instead of forming “electroplex emission” as reported earlier in literatures. Our experimental data show that charge carriers bulk recombination takes place in both PVK layer and BCP layer, and even in Alq3 layer when BCP layer is thin enough. Further, it is suggested that PVK is the origin of the emission shoulder at 595 nm in the EL spectra of trilayer device ITO/PVK/BCP/Alq3/Al.

  2. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya; Vezie, Michelle S; Gasparini, Nicola; Deledalle, Florent; Yao, Jizhong; Schroeder, Bob C.; Bronstein, Hugo; Ameri, Tayebeh; Kirchartz, Thomas; McCulloch, Iain; Nelson, Jenny; Brabec, Christoph J

    2015-01-01

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  3. Charge separation and carrier dynamics in donor-acceptor heterojunction photovoltaic systems.

    Science.gov (United States)

    Teuscher, Joël; Brauer, Jan C; Stepanov, Andrey; Solano, Alicia; Boziki, Ariadni; Chergui, Majed; Wolf, Jean-Pierre; Rothlisberger, Ursula; Banerji, Natalie; Moser, Jacques-E

    2017-11-01

    Electron transfer and subsequent charge separation across donor-acceptor heterojunctions remain the most important areas of study in the field of third-generation photovoltaics. In this context, it is particularly important to unravel the dynamics of individual ultrafast processes (such as photoinduced electron transfer, carrier trapping and association, and energy transfer and relaxation), which prevail in materials and at their interfaces. In the frame of the National Center of Competence in Research "Molecular Ultrafast Science and Technology," a research instrument of the Swiss National Science Foundation, several groups active in the field of ultrafast science in Switzerland have applied a number of complementary experimental techniques and computational simulation tools to scrutinize these critical photophysical phenomena. Structural, electronic, and transport properties of the materials and the detailed mechanisms of photoinduced charge separation in dye-sensitized solar cells, conjugated polymer- and small molecule-based organic photovoltaics, and high-efficiency lead halide perovskite solar energy converters have been scrutinized. Results yielded more than thirty research articles, an overview of which is provided here.

  4. Charge separation and carrier dynamics in donor-acceptor heterojunction photovoltaic systems

    Directory of Open Access Journals (Sweden)

    Joël Teuscher

    2017-11-01

    Full Text Available Electron transfer and subsequent charge separation across donor-acceptor heterojunctions remain the most important areas of study in the field of third-generation photovoltaics. In this context, it is particularly important to unravel the dynamics of individual ultrafast processes (such as photoinduced electron transfer, carrier trapping and association, and energy transfer and relaxation, which prevail in materials and at their interfaces. In the frame of the National Center of Competence in Research “Molecular Ultrafast Science and Technology,” a research instrument of the Swiss National Science Foundation, several groups active in the field of ultrafast science in Switzerland have applied a number of complementary experimental techniques and computational simulation tools to scrutinize these critical photophysical phenomena. Structural, electronic, and transport properties of the materials and the detailed mechanisms of photoinduced charge separation in dye-sensitized solar cells, conjugated polymer- and small molecule-based organic photovoltaics, and high-efficiency lead halide perovskite solar energy converters have been scrutinized. Results yielded more than thirty research articles, an overview of which is provided here.

  5. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong

    2016-04-15

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.

  6. Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field

    Energy Technology Data Exchange (ETDEWEB)

    Sinyavskii, E. P., E-mail: sinyavskii@gmail.com [Academy of Sciences of Moldova, Institute of Applied Physics (Moldova, Republic of); Karapetyan, S. A., E-mail: karapetyan.sa@gmail.com [Shevchenko Pridnestrovskii State University (Moldova, Republic of)

    2011-08-15

    The mobility of charge carriers {mu} in a parabolic quantum well in an electric field E directed along the size-confinement axis is calculated. With consideration for scattering of charge carriers at a rough surface, the mobility {mu} is shown to decrease with increasing E. A physical interpretation of this effect is proposed.

  7. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Cheng, Gary J., E-mail: gjcheng@purdue.edu [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Zhang, Martin Y. [School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Wang, Yuefeng [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Das, Suprem R.; Bhat, Venkataprasad S. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); Huang, Fuqiang [Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050 (China)

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  8. Charge and excitation dynamics in semiconducting polymer layers doped with emitters and charge carrier traps; Ladungstraeger- und Anregungsdynamik in halbleitenden Polymerschichten mit eingemischten Emittern und Ladungstraegerfallen

    Energy Technology Data Exchange (ETDEWEB)

    Jaiser, F

    2006-06-15

    Light-emitting diodes generate light from the recombination of injected charge carriers. This can be obtained in inorganic materials. Here, it is necessary to produce highly ordered crystalline structures that determine the properties of the device. Another possibility is the utilization of organic molecules and polymers. Based on the versatile organic chemistry, it is possible to tune the properties of the semiconducting polymers already during synthesis. In addition, semiconducting polymers are mechanically flexible. Thus, it is possible to construct flexible, large-area light sources and displays. The first light-emitting diode using a polymer emitter was presented in 1990. Since then, this field of research has grown rapidly up to the point where first products are commercially available. It has become clear that the properties of polymer light-emitting diodes such as color and efficiency can be improved by incorporating multiple components inside the active layer. At the same time, this gives rise to new interactions between these components. While components are often added either to improve the charge transport or to change the emission, it has to made sure that other processes are not influenced in a negative manner. This work investigates some of these interactions and describes them with simple physical models. First, blue light-emitting diodes based on polyfluorene are analyzed. This polymer is an efficient emitter, but it is susceptible to the formation of chemical defects that can not be suppressed completely. These defects form electron traps, but their effect can be compensated by the addition of hole traps. The underlying process, namely the changed charge carrier balance, is explained. In the following, blend systems with dendronized emitters that form electron traps are investigated. The different influence of the insulating shell on the charge and energy transfer between polymer host and the emissive core of the dendrimers is examined. In the

  9. Thermal generation and mobility of charge carriers in collective proton transport in hydrogen-bonded chains

    International Nuclear Information System (INIS)

    Peyrard, M.; Boesch, R.; Kourakis, I.

    1991-01-01

    The transport of protons in hydrogen-bonded systems is a long standing problem which has not yet obtained a satisfactorily theoretical description. Although this problem was examined first for ice, it is relevant in many systems and in particular in biology for the transport along proteins or for proton conductance across membranes, an essential process in cell life. The broad relevance makes the study of proton conduction very appealing. Since the original work of Bernal and Fowler on ice, the idea that the transport occurs through chains of hydrogen bonds has been well accepted. Such ''proton wires'' were invoked by Nagle and Morowitz for proton transport across membranes proteins and more recently across lipid bilayers. In this report, we assume the existence of such an hydrogen-bonded chain and discuss its consequences on the dynamics of the charge carriers. We show that this assumption leads naturally to the idea of soliton transport and we put a special emphasis on the role of the coupling between the protons and heavy ions motions. The model is presented. We show how the coupling affects strongly the dynamics of the charge carriers and we discuss the role it plays in the thermal generation of carriers. The work presented has been performed in 1986 and 87 with St. Pnevmatikos and N. Flyzanis and was then completed in collaboration with D. Hochstrasser and H. Buettner. Therefore the results presented in this part are not new but we think that they are appropriate in the context of this multidisciplinary workshop because they provide a rather complete example of the soliton picture for proton conduction. This paper discusses the thermal generation of the charge carriers when the coupling between the protons and heavy ions dynamics is taken into account. The results presented in this part are very recent and will deserve further analysis but they already show that the coupling can assist for the formation of the charge carriers

  10. Quantitative description of charge-carrier transport in a white organic light-emitting diode

    Science.gov (United States)

    Schober, M.; Anderson, M.; Thomschke, M.; Widmer, J.; Furno, M.; Scholz, R.; Lüssem, B.; Leo, K.

    2011-10-01

    We present a simulation model for the analysis of charge-carrier transport in organic thin-film devices, and apply it to a three-color white hybrid organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emission. We simulate a series of single-carrier devices, which reconstruct the OLED layer sequence step by step. Thereby, we determine the energy profiles for hole and electron transport, show how to discern bulk from interface limitation, and identify trap states.

  11. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  12. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  13. Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

    KAUST Repository

    Jang, Ji-Wook; Friedrich, Dennis; Mü ller, Sö nke; Lamers, Marlene; Hempel, Hannes; Lardhi, Sheikha F.; Cao, Zhen; Harb, Moussab; Cavallo, Luigi; Heller, René ; Eichberger, Rainer; van de Krol, Roel; Abdi, Fatwa F.

    2017-01-01

    and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one

  14. Surface charge compensation for a highly charged ion emission microscope

    International Nuclear Information System (INIS)

    McDonald, J.W.; Hamza, A.V.; Newman, M.W.; Holder, J.P.; Schneider, D.H.G.; Schenkel, T.

    2003-01-01

    A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the Time-Of-Flight (TOF) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun enhanced HCI microscope are discussed

  15. The thermoballistic transport model a novel approach to charge carrier transport in semiconductors

    CERN Document Server

    Lipperheide, Reinhard

    2014-01-01

    The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detai...

  16. Charge carrier transport and photogeneration in P3HT:PCBM photovoltaic blends.

    Science.gov (United States)

    Laquai, Frédéric; Andrienko, Denis; Mauer, Ralf; Blom, Paul W M

    2015-06-01

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano-fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10(-4) cm(2) V(-1) s(-1) after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea-sured in P3HT:PCBM photovoltaic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Charge Carrier Transport and Photogeneration in P3HT:PCBM Photovoltaic Blends

    KAUST Repository

    Laquai, Frederic

    2015-05-03

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano­fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10−4 cm2 V−1 s−1 after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea­sured in P3HT:PCBM photovoltaic devices.

  18. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  19. Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

    CERN Document Server

    Kazakevich, L A

    2003-01-01

    It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

  20. Transient Zitterbewegung of charge carriers in mono- and bilayer graphene, and carbon nanotubes

    International Nuclear Information System (INIS)

    Rusin, Tomasz M.; Zawadzki, Wlodek

    2007-01-01

    Observable effects due to trembling motion [Zitterbewegung (ZB)] of charge carriers in bilayer graphene, monolayer graphene, and carbon nanotubes are calculated. It is shown that, when the charge carriers are prepared in the form of Gaussian wave packets, the ZB has a transient character with the decay time of femtoseconds in graphene and picoseconds in nanotubes. Analytical results for bilayer graphene allow us to investigate phenomena which accompany the trembling motion. In particular, it is shown that the transient character of ZB in graphene is due to the fact that wave subpackets related to positive and negative electron energies move in opposite directions, so their overlap diminishes with time. This behavior is analogous to that of the wave packets representing relativistic electrons in a vacuum

  1. Time-dependent mobility and recombination of the photoinduced charge carriers in conjugated polymer/fullerene bulk heterojunction solar cells

    Science.gov (United States)

    Mozer, A. J.; Dennler, G.; Sariciftci, N. S.; Westerling, M.; Pivrikas, A.; Österbacka, R.; Juška, G.

    2005-07-01

    Time-dependent mobility and recombination in the blend of poly[2-methoxy-5-(3,7-dimethyloctyloxy)-phenylene vinylene] (MDMO-PPV) and 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)- C61 (PCBM) is studied simultaneously using the photoinduced charge carrier extraction by linearly increasing voltage technique. The charge carriers are photogenerated by a strongly absorbed, 3 ns laser flash, and extracted by the application of a reverse bias voltage pulse after an adjustable delay time (tdel) . It is found that the mobility of the extracted charge carriers decreases with increasing delay time, especially shortly after photoexcitation. The time-dependent mobility μ(t) is attributed to the energy relaxation of the charge carriers towards the tail states of the density of states distribution. A model based on a dispersive bimolecular recombination is formulated, which properly describes the concentration decay of the extracted charge carriers at all measured temperatures and concentrations. The calculated bimolecular recombination coefficient β(t) is also found to be time-dependent exhibiting a power law dependence as β(t)=β0t-(1-γ) with increasing slope (1-γ) with decreasing temperatures. The temperature dependence study reveals that both the mobility and recombination of the photogenerated charge carriers are thermally activated processes with activation energy in the range of 0.1 eV. Finally, the direct comparison of μ(t) and β(t) shows that the recombination of the long-lived charge carriers is controlled by diffusion.

  2. Carrier mobility in mesoscale heterogeneous organic materials: Effects of crystallinity and anisotropy on efficient charge transport

    Science.gov (United States)

    Kobayashi, Hajime; Shirasawa, Raku; Nakamoto, Mitsunori; Hattori, Shinnosuke; Tomiya, Shigetaka

    2017-07-01

    Charge transport in the mesoscale bulk heterojunctions (BHJs) of organic photovoltaic devices (OPVs) is studied using multiscale simulations in combination with molecular dynamics, the density functional theory, the molecular-level kinetic Monte Carlo (kMC) method, and the coarse-grained kMC method, which was developed to estimate mesoscale carrier mobility. The effects of the degree of crystallinity and the anisotropy of the conductivity of donors on hole mobility are studied for BHJ structures that consist of crystalline and amorphous pentacene grains that act as donors and amorphous C60 grains that act as acceptors. We find that the hole mobility varies dramatically with the degree of crystallinity of pentacene because it is largely restricted by a low-mobility amorphous region that occurs in the hole transport network. It was also found that the percolation threshold of crystalline pentacene is relatively high at approximately 0.6. This high percolation threshold is attributed to the 2D-like conductivity of crystalline pentacene, and the threshold is greatly improved to a value of approximately 0.3 using 3D-like conductive donors. We propose essential guidelines to show that it is critical to increase the degree of crystallinity and develop 3D conductive donors for efficient hole transport through percolative networks in the BHJs of OPVs.

  3. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao

    2009-01-01

    OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  4. Grain Boundaries Act as Solid Walls for Charge Carrier Diffusion in Large Crystal MAPI Thin Films.

    Science.gov (United States)

    Ciesielski, Richard; Schäfer, Frank; Hartmann, Nicolai F; Giesbrecht, Nadja; Bein, Thomas; Docampo, Pablo; Hartschuh, Achim

    2018-03-07

    Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices.

  5. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

  6. Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

    Science.gov (United States)

    Edley, Michael

    . With these techniques, the extension of the depletion layer from CdSe into ZnO was determined to be vital to suppression of interfacial recombination. However, depletion of the ZnO also restricted the effective diffusion core for electrons and slowed their transport. Thus, materials and geometries should be chosen to allow for a depletion layer that suppresses interfacial recombination without impeding electron transport to the point that it is detrimental to cell performance. Thin film solar cells are another promising technology that can reduce costs by relaxing material processing requirements. CuInxGa (1-x)Se (CIGS) is a well studied thin film solar cell material that has achieved good efficiencies of 22.6%. However, use of rare elements raise concerns over the use of CIGS for global power production. CuSbS2 shares chemistry with CuInSe2 and also presents desirable properties for thin film absorbers such as optimal band gap (1.5 eV), high absorption coefficient, and Earth-abundant and non-toxic elements. Despite the promise of CuSbS2, direct characterization of the material for solar cell application is scarce in the literature. CuSbS2 nanoplates were synthesized by a colloidal hot-injection method at 220 °C in oleylamine. The CuSbS2 platelets synthesized for 30 minutes had dimensions of 300 nm by 400 nm with a thickness of 50 nm and were capped with the insulating oleylamine synthesis ligand. The oleylamine synthesis ligand provides control over nanocrystal growth but is detrimental to intercrystal charge transport that is necessary for optoelectronic device applications. Solid-state and solution phase ligand exchange of oleylamine with S2- were used to fabricate mesoporous films of CuSbS2 nanoplates for application in solar cells. Exchange of the synthesis ligand with S2- resulted in a two order of magnitude increase in 4-point probe conductivity. Photoexcited carrier lifetimes of 1.4 ns were measured by time-resolved terahertz spectroscopy, indicating potential

  7. Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

    International Nuclear Information System (INIS)

    Baek, H I; Lee, C H

    2008-01-01

    We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy) 3 ) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp 2 Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{4-(N,N-diphenylamino) phenyl}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A -1 (an external quantum efficiency of 8.5%) at 100 cd m -2 and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested

  8. Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

    Energy Technology Data Exchange (ETDEWEB)

    Baek, H I; Lee, C H [School of Electrical Engineering and Computer Science and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)], E-mail: hibaek75@snu.ac.kr

    2008-05-21

    We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy){sub 3}) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp{sub 2}Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{l_brace}4-(N,N-diphenylamino) phenyl{r_brace}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A{sup -1} (an external quantum efficiency of 8.5%) at 100 cd m{sup -2} and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested.

  9. Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

    KAUST Repository

    Jang, Ji-Wook

    2017-08-25

    Widespread application of solar water splitting for energy conversion is largely dependent on the progress in developing not only efficient but also cheap and scalable photoelectrodes. Metal oxides, which can be deposited with scalable techniques and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one of the most promising metal oxide photoelectrodes, as a method to overcome the carrier transport limitations. Time-resolved microwave and terahertz conductivity measurements reveal more than twofold enhancement of the carrier lifetime for the hydrogen-treated BiVO4, without significantly affecting the carrier mobility. This is in contrast to the case of tungsten-doped BiVO4, although hydrogen is also a donor type dopant in BiVO4. The enhancement in carrier lifetime is found to be caused by significant reduction of trap-assisted recombination, either via passivation or reduction of deep trap states related to vanadium antisite on bismuth or vanadium interstitials according to density functional theory calculations. Overall, these findings provide further insights on the interplay between defect modulation and carrier transport in metal oxides, which benefit the development of low-cost, highly-efficient solar energy conversion devices.

  10. Excited state and charge-carrier dynamics in perovskite solar cell materials

    Science.gov (United States)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  11. Excited state and charge-carrier dynamics in perovskite solar cell materials

    International Nuclear Information System (INIS)

    Ponseca, Carlito S Jr; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

    2016-01-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research. (topical review)

  12. Study of the Bulk Charge Carrier Dynamics in Anatase and Rutile TiO2 Single Crystals by Femtosecond Time Resolved Spectroscopy

    KAUST Repository

    Maity, Partha

    2018-04-02

    Understanding of the fundamentals behind charge carriers of photo-catalytic materials are still illusive hindering progress in our quest for renewable energy. TiO2 anatase and rutile are the most understood phases in photo-catalysis and serve as the best model for fundamental studies. Their ultrafast charge carrier dynamics especially on TiO2 anatase single crystal (the most active phase) are unresolved. Here femtosecond time resolved spectroscopy (TRS) was carried out to explore the dynamics of photo-excited charge carriers’ recombination in anatase single crystal, for the first time using pump fluence effects, and compares it to that of the rutile single crystal. A significant difference in charge carrier recombination rates between both crystals is observed. We found that the time constants for carrier recombination are two orders of magnitude slower for anatase (101) when compared to those of rutile (110). Moreover, bulk defects introduced by reduction of the samples via annealing in ultra-high vacuum resulted in faster recombination rates for both polymorphs. Both states (fresh and reduced) probed by pump fluence dependence measurements revealed that the major recombination channel in fresh and reduced anatase and reduced rutile is the first-order Shockley–Reed mediated. However, for fresh rutile, third-body Auger recombination was observed, attributed to the presence of higher density of intrinsic charge carriers. At all excitation wavelengths and fluence investigated, anatase (101) single crystal show longer charge carrier lifetime when compared to rutile (110) single. This may explain the superiority of the anatase phase for the electron transfer H+ reduction to molecular hydrogen.

  13. Kinetics of photo-activated charge carriers in Sn:CdS

    Energy Technology Data Exchange (ETDEWEB)

    Patidar, Manju Mishra, E-mail: manjumishra.iuc@gmail.com; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V. [UGC-DAE CSR, University Campus, Khandwa Road, Indore (M.P.)-452001 (India); Panda, Richa [S.S. Jain Subodh Girls College, Airport Road Sanganer, Jaipur - 302029 (India)

    2016-05-23

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd{sub 1-x}Sn{sub x}S (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ{sub 1}, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  14. Phase separation in strongly correlated electron systems with two types of charge carriers

    International Nuclear Information System (INIS)

    Kugel, K.I.; Rakhmanov, A.L.; Sboychakov, A.O.

    2007-01-01

    Full text: A competition between the localization of the charge carriers due to Jahn-Teller distortions and the energy gain due to their delocalization in doped manganite and related magnetic oxides is analyzed based on a Kondo-lattice type model. The resulting effective Hamiltonian is, in fact, a generalization of the Falicov-Kimball model. We find that the number of itinerant charge carriers can be significantly lower than that implied by the doping level x. The phase diagram of the model in the T plane is constructed. The system exhibits magnetic ordered (antiferromagnetic, ferromagnetic, or canted) states as well the paramagnetic states with zero and nonzero density of the itinerant electrons. It is shown that a phase-separation is favorable in energy for a wide doping range. The characteristic size of inhomogeneities in a phase-separated state is of the order of several lattice constants. We also analyzed the two-band Hubbard model in the limit of strong on-site Coulomb repulsion. It was shown that such a system has a tendency to phase separation into the regions with different charge densities even in the absence of magnetic or any other ordering, if the ratio of the bandwidths is large enough. The work was supported by the European project CoMePhS and by the Russian Foundation for Basic Research, project no. 05-02-17600. (authors)

  15. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    Science.gov (United States)

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  16. Observation of disorder effects on charged carrier mobility in triphenylene-based discotic materials

    International Nuclear Information System (INIS)

    Zhang Chunxiu; He, Zhiqun; Mao Huaxiang; Wang Junjie; Wang Dongdong; Wang Yongsheng; Li Zhongxiao; Pu Jialing

    2007-01-01

    A discotic 2,6,10-trihydroxy-3,7,11-tripentyloxytriphenylene material and a triphenylene-based hyperbranched macromolecule were synthesized, in which the latter was prepared from AB m molecules in a one-pot reaction. Adipic chloride and butyryl chloride were chosen as terminal groups to the 2,6,10-trihydroxy-3,7,11-tripentyloxytriphenylene. Mesophase and their structural orders were determined using a polarized optical microscope and a differential scanning calorimeter. Carrier mobilities of the pure and composite materials were measured via a time-of-flight method. A change in carrier mobility on the morphology of the materials was further discussed. It was found that degree of crystallization was the key for a discotic triphenylene material to possess charge-transporting properties, no matter it is ordered or disordered

  17. Positively Charged Nanostructured Lipid Carriers and Their Effect on the Dissolution of Poorly Soluble Drugs

    Directory of Open Access Journals (Sweden)

    Kyeong-Ok Choi

    2016-05-01

    Full Text Available The objective of this study is to develop suitable formulations to improve the dissolution rate of poorly water soluble drugs. We selected lipid-based formulation as a drug carrier and modified the surface using positively charged chitosan derivative (HTCC to increase its water solubility and bioavailability. Chitosan and HTCC-coated lipid particles had higher zeta-potential values than uncoated one over the whole pH ranges and improved encapsulation efficiency. In vitro drug release showed that all NLC formulations showed higher in vitro release efficiency than drug particle at pH 7.4. Furthermore, NLC formulation prepared with chitosan or HTCC represented good sustained release property. The results indicate that chitosan and HTCC can be excellent formulating excipients of lipid-based delivery carrier for improving poorly water soluble drug delivery.

  18. Positively Charged Nanostructured Lipid Carriers and Their Effect on the Dissolution of Poorly Soluble Drugs.

    Science.gov (United States)

    Choi, Kyeong-Ok; Choe, Jaehyeog; Suh, Seokjin; Ko, Sanghoon

    2016-05-20

    The objective of this study is to develop suitable formulations to improve the dissolution rate of poorly water soluble drugs. We selected lipid-based formulation as a drug carrier and modified the surface using positively charged chitosan derivative (HTCC) to increase its water solubility and bioavailability. Chitosan and HTCC-coated lipid particles had higher zeta-potential values than uncoated one over the whole pH ranges and improved encapsulation efficiency. In vitro drug release showed that all NLC formulations showed higher in vitro release efficiency than drug particle at pH 7.4. Furthermore, NLC formulation prepared with chitosan or HTCC represented good sustained release property. The results indicate that chitosan and HTCC can be excellent formulating excipients of lipid-based delivery carrier for improving poorly water soluble drug delivery.

  19. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  20. Generation of reactive oxygen species and charge carriers in plasmonic photocatalytic Au@TiO2 nanostructures with enhanced activity.

    Science.gov (United States)

    He, Weiwei; Cai, Junhui; Jiang, Xiumei; Yin, Jun-Jie; Meng, Qingbo

    2018-06-13

    The combination of semiconductor and plasmonic nanostructures, endowed with high efficiency light harvesting and surface plasmon confinement, has been a promising way for efficient utilization of solar energy. Although the surface plasmon resonance (SPR) assisted photocatalysis has been extensively studied, the photochemical mechanism, e.g. the effect of SPR on the generation of reactive oxygen species and charge carriers, is not well understood. In this study, we take Au@TiO2 nanostructures as a plasmonic photocatalyst to address this critical issue. The Au@TiO2 core/shell nanostructures with tunable SPR property were synthesized by the templating method with post annealing thermal treatment. It was found that Au@TiO2 nanostructures exhibit enhanced photocatalytic activity in either sunlight or visible light (λ > 420 nm). Electron spin resonance spectroscopy with spin trapping and spin labeling was used to investigate the enhancing effect of Au@TiO2 on the photo-induced reactive oxygen species and charge carriers. The formation of Au@TiO2 core/shell nanostructures resulted in a dramatic increase in light-induced generation of hydroxyl radicals, singlet oxygen, holes and electrons, as compared with TiO2 alone. This enhancement under visible light (λ > 420 nm) irradiation may be dominated by SPR induced local electrical field enhancement, while the enhancement under sunlight irradiation is dominated by the higher electron transfer from TiO2 to Au. These results unveiled that the superior photocatalytic activity of Au@TiO2 nanostructures correlates with enhanced generation of reactive oxygen species and charge carriers.

  1. Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films

    Science.gov (United States)

    Röhr, Jason A.; Moia, Davide; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

    2018-03-01

    Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

  2. Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films.

    Science.gov (United States)

    Röhr, Jason A; Moia, Davide; Haque, Saif A; Kirchartz, Thomas; Nelson, Jenny

    2018-03-14

    Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

  3. Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films

    International Nuclear Information System (INIS)

    Zhou Yan-Wen; Wu Fa-Yu; Zheng Chun-Yan

    2011-01-01

    We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO 2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Modelling of charge carrier transport in conjugated polymers doped by polar additives

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr; Nešpůrek, Stanislav; Bartkowiak, W.

    2009-01-01

    Roč. 27, č. 3 (2009), s. 797-812 ISSN 0137-1339. [International Conference on Electrical and Related Properties of Organic Solids /11./. Piechowice, 13.07.2008-17.07.2008] R&D Projects: GA ČR GA203/06/0285; GA AV ČR KAN400720701; GA MŠk MEB050815 Institutional research plan: CEZ:AV0Z40500505 Keywords : conjugated polymers * charge carrier transport * molecular electronics Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.384, year: 2009

  5. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    Science.gov (United States)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  6. Ballistic charge carrier transmission through graphene multi-barrier structures in uniform magnetic field

    International Nuclear Information System (INIS)

    Zubarev, A; Dragoman, D

    2014-01-01

    We investigate charge carrier transport in graphene multi-barrier structures placed in a uniform magnetic field. The transmission coefficient is found analytically by generalizing the transfer matrix method for the case of graphene regions subjected to a uniform magnetic field. The transmission coefficient through the structure can be modulated by varying the gate voltages, the magnetic field and/or the width of the gated regions. Such a configuration could be used in multiple-valued logic circuits, since it has several output states with discrete and easily selectable transmission/current values. (paper)

  7. Designing thiophene-based azomethine oligomers with tailored properties: Self-assembly and charge carrier mobility

    DEFF Research Database (Denmark)

    Kiriy, N.; Bocharova, V.; Kiriy, A.

    2004-01-01

    This paper describes synthesis and characterization of two thiophene-based azomethines designed to optimize solubility, self-assembly, and charge carrier mobility. We found that incorporation of azomethine and amide moieties in the alpha,omega-position, and hexyl chains in the beta-position of th...... with the mobilities of the best organic semiconductors. All these significant differences in properties of related compounds can be attributed to the hydrogen bonding between QT-amide molecules responsible for the observed self-assembly....

  8. Modelling of charge carrier mobility for transport between elastic polyacetylene-like polymer nanorods

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Sun, S. J.; Toman, Petr; Král, Karel

    2017-01-01

    Roč. 61, č. 2 (2017), s. 127-135 ISSN 0862-5468 R&D Projects: GA MŠk(CZ) LD14011; GA ČR(CZ) GA15-05095S Grant - others:European Commission(XE) COST Action MP1202 HINT; AV ČR(CZ) KONNECT-007 Program:Bilaterální spolupráce Institutional support: RVO:61389013 ; RVO:68378271 Keywords : charge carrier mobility * polymers * electron-phonon coupling Subject RIV: CF - Physical ; Theoretical Chemistry; CF - Physical ; Theoretical Chemistry (FZU-D) OBOR OECD: Physical chemistry; Physical chemistry (FZU-D) Impact factor: 0.439, year: 2016

  9. Charge carrier dynamics in PMMA-LiClO4 based polymer electrolytes plasticized with different plasticizers

    Science.gov (United States)

    Pal, P.; Ghosh, A.

    2017-07-01

    We have studied the charge carrier dynamics in poly(methylmethacrylate)-LiClO4 polymer electrolytes plasticized with different plasticizers such as ethylene carbonate (EC), propylene carbonate (PC), polyethylene glycol (PEG), and dimethyl carbonate (DMC). We have measured the broadband complex conductivity spectra of these electrolytes in the frequency range of 0.01 Hz-3 GHz and in the temperature range of 203 K-363 K and analyzed the conductivity spectra in the framework of the random barrier model by taking into account the contribution of the electrode polarization observed at low frequencies and/or at high temperatures. It is observed that the temperature dependences of the ionic conductivity and relaxation time follow the Vogel-Tammann-Fulcher relation for all plasticized electrolytes. We have also performed the scaling of the conductivity spectra, which indicates that the charge carrier dynamics is almost independent of temperature and plasticizers in a limited frequency range. The existence of nearly constant loss in these electrolytes has been observed at low temperatures and/or high frequencies. We have studied the dielectric relaxation in these electrolytes using electric modulus formalism and obtained the stretched exponent and the decay function. We have observed less cooperative ion dynamics in electrolytes plasticized with DMC compared to electrolytes plasticized with EC, PC, and PEG.

  10. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    Science.gov (United States)

    Pal, P.; Ghosh, A.

    2016-07-01

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  11. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    Energy Technology Data Exchange (ETDEWEB)

    Pal, P.; Ghosh, A., E-mail: sspag@iacs.res.in [Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2016-07-28

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  12. Experimental evidence for importance of Hund's exchange interaction for incoherence of charge carriers in iron-based superconductors

    Science.gov (United States)

    Fink, J.; Rienks, E. D. L.; Thirupathaiah, S.; Nayak, J.; van Roekeghem, A.; Biermann, S.; Wolf, T.; Adelmann, P.; Jeevan, H. S.; Gegenwart, P.; Wurmehl, S.; Felser, C.; Büchner, B.

    2017-04-01

    Angle-resolved photoemission spectroscopy is used to study the scattering rates of charge carriers from the hole pockets near Γ in the iron-based high-Tc hole-doped superconductors KxBa1 -xFe2As2 , x =0.4 , and KxEu1 -xFe2As2 , x =0.55 , and the electron-doped compound Ba (Fe1-xCox) 2As2 , x =0.075 . The scattering rate for any given band is found to depend linearly on the energy, indicating a non-Fermi-liquid regime. The scattering rates in the hole-doped compound are considerably higher than those in the electron-doped compounds. In the hole-doped systems the scattering rate of the charge carriers of the inner hole pocket is about three times higher than the binding energy, indicating that the spectral weight is heavily incoherent. The strength of the scattering rates and the difference between electron- and hole-doped compounds signals the importance of Hund's exchange coupling for correlation effects in these iron-based high-Tc superconductors. The experimental results are in qualitative agreement with theoretical calculations in the framework of combined density functional dynamical mean-field theory.

  13. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    Science.gov (United States)

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials.

  14. Dynamics of charge carrier trapping in NO 2 sensors based on ZnO field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.-M.; Vlietstra, N.; Smits, E.C.P.; Spijkman, M.-J.; Gomes, H.L.; Klootwijk, J.H.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a

  15. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-05-22

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  16. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.; Howard, Ian A.; Laquai, Fré dé ric

    2015-01-01

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  17. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    International Nuclear Information System (INIS)

    Song, Linze; Shi, Qiang

    2015-01-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated

  18. Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies

    DEFF Research Database (Denmark)

    Leißner, Till; Jensen, Per Baunegaard With; Liu, Yiming

    2017-01-01

    The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic...... interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical...... and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier...

  19. Triphenylene columnar liquid crystals: spectroscopic study of triplets states and charge carriers

    International Nuclear Information System (INIS)

    Bondkowski, Jens

    2000-01-01

    This research thesis reports the study of three oxygenated derivatives of triphenylene (two monomers, a symmetric one and an asymmetric one, and a tetramer) by using different experimental techniques: absorption spectroscopy and fluorescence spectroscopy in stationary regime, and time-resolved fluorescence spectroscopy (also said single photon counting). Moreover, the author adapted an existing experiment of transient absorption spectroscopy time-resolved at the microsecond level to obtain spectra of thin layers under electric field. A cyclic voltammetry experiment and a spectro-electrochemistry experiment have also been performed. The report first presents the studied materials, the characterisation of singlet states, and the study of the effect molecular symmetry decreasing have on molecular transitions. Then, the author reports the study of cationic species of the triphenylene derivatives. The next chapters address the characterisation of derivative triplet states, and the study of energy transfer within the meso phase of one of these derivatives. The last chapters address charge carriers of columnar liquid crystals, and the molecular nature of these charge carriers

  20. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.; Reid, Obadiah G.; Barnes, George; Heeney, Martin; Stingelin, Natalie; Rumbles, Garry

    2014-01-01

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  1. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.

    2014-03-22

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  2. Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field

    NARCIS (Netherlands)

    Katsouras, I.; Najafi, A.; Asadi, K.; Kronemeijer, A. J.; Oostra, A. J.; Koster, L. J. A.; de Leeuw, D. M.; Blom, P. W. M.

    Charge transport in poly(2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV)-based hole-only diodes is investigated at high electric fields and low temperatures using a novel diode architecture. Charge carrier densities that are in the range of those in a field-effect transistor are

  3. High-frequency acoustic charge transport in GaAs nanowires

    NARCIS (Netherlands)

    Büyükköse, S.; Hernandez-Minguez, A.; Vratzov, B.; Somaschini, C.; Geelhaar, L.; Riechert, H.; van der Wiel, Wilfred Gerard; Santos, P.V.

    2014-01-01

    The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short

  4. Nonlinear transport in semiconducting polymers at high carrier densities.

    Science.gov (United States)

    Yuen, Jonathan D; Menon, Reghu; Coates, Nelson E; Namdas, Ebinazar B; Cho, Shinuk; Hannahs, Scott T; Moses, Daniel; Heeger, Alan J

    2009-07-01

    Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning with mobilities around 10(-4) cm(2) V(-1) s(-1) to a recent report of 1 cm(2) V(-1) s(-1) for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional 'metal'.

  5. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl

    2013-01-31

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  6. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl; Cho, Eunkyung; Malafeev, Alexander; Ivanov, Viktor; Kremer, Kurt; Risko, Chad; Bré das, Jean-Luc; Andrienko, Denis

    2013-01-01

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  7. Charged current weak interactions at high energy

    International Nuclear Information System (INIS)

    Cline, D.

    1977-01-01

    We review high energy neutrino and antineutrino charged current interactions. An overview of the experimental data is given, including a discussion of the experimental status of the y anomaly. Locality tests, μ-e universality and charge symmetry invariance tests are discussed. Charm production is discussed. The experimental status of trimuon events and possible phenomenological models for these events are presented. (orig.) [de

  8. ECRIS sources for highly charged ions

    International Nuclear Information System (INIS)

    Geller, R.

    1991-01-01

    The so-called Philips ionization gauge ion sources (PIGIS) were used until quite recently in heavy ion accelerators so multiply charged ions could only be obtained by incorporating a stripper to remove electrons. Electron cyclotron resonance ion sources (ECRIS) now dominate as they produce more highly charged ions. (orig.)

  9. Effect of trap states and microstructure on charge carrier conduction mechanism through semicrystalline poly(vinyl alcohol) granular film

    Science.gov (United States)

    Das, A. K.; Bhowmik, R. N.; Meikap, A. K.

    2018-05-01

    We report a comprehensive study on hysteresis behaviour of current-voltage characteristic and impedance spectroscopy of granular semicrystalline poly(vinyl alcohol) (PVA) film. The charge carrier conduction mechanism and charge traps of granular PVA film by measuring and analyzing the temperature dependent current-voltage characteristic indicate a bi-stable electronic state in the film. A sharp transformation of charge carrier conduction mechanism from Poole-Frenkel emission to space charge limited current mechanism has been observed. An anomalous oscillatory behaviour of current has been observed due to electric pulse effect on the molecular chain of the polymer. Effect of microstructure on charge transport mechanism has been investigated from impedance spectroscopy analysis. An equivalent circuit model has been proposed to explain the result.

  10. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Winata, Toto

    2016-01-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  11. Charge carriers at organic heterojunction interface: Exciplex emission or electroplex emission?

    Science.gov (United States)

    Yang, Shengyi; Zhang, Xiulong; Hou, Yanbing; Deng, Zhenbo; Xu, Xurong

    2007-05-01

    We report the electroluminescence (EL) of organic heterojunction devices based on N ,N'-diphenyl-N ,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4',-diamine (TPD) and 2-(4'-biphenyl)-5-(4″-tert-butylphenyl)-1,3,4-oxadiazole (PBD). Besides monomolecular emissions from TPD, there are two additional EL peaks at around 460 and 480nm from the bilayer device indium tin oxide (ITO)/TPD(100nm )/PBD(45nm)/Al. Our experimental data confirmed that the EL emission maximized at around 460nm is from electroplex as the result of charge carriers cross recombination at the TPD/PBD interface and the EL emission maximized at around 480nm originates from (TPD*PBD)-type exciplex.

  12. MODELLING OF CHARGE CARRIER MOBILITY FOR TRANSPORT BETWEEN ELASTIC POLYACETYLENE-LIKE POLYMER NANORODS

    Directory of Open Access Journals (Sweden)

    M. Mensik

    2017-03-01

    Full Text Available A quantum model solving the charge carrier mobility between polyacetylene-like polymer nanorods is presented. The model assumes: a Quantum mechanical calculation of hole on-chain delocalization involving electron-phonon coupling leading to the Peierls instability, b Hybridization coupling between the polymer backbone and side-groups (or environmental states, which act as hole traps, and c Semiclassical description of the inter-chain hole transfer in an applied voltage based on Marcus theory. We have found that mobility resonantly depends on the hybridization coupling between polymer and linked groups. We observed also non-trivial mobility dependences on the difference of energies of the highest occupied molecular orbitals localized on the polymer backbone and side-groups, respectively, and hole concentration. Those findings are important for optimization of hybrid opto-electronic devices.

  13. i-CELIV technique for investigation of charge carriers transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Važgėla, J., E-mail: julius.vazgela@ff.vu.lt; Genevičius, K.; Juška, G.

    2016-10-20

    The extraction of the injected charge carriers by linearly increasing voltage (i-CELIV) is a promising method for separate analysis of the holes and electrons transport properties in the bulk heterojunction layers. We are demonstrating how to establish the mobility dependence on the electric field and obtain more precise results by performing corrections in transit time by this technique. [6,6]-Phenyl C61 butyric acid methyl ester (PCBM) and poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT) bulk heterojunctions with different blend ratios were experimentally tested with i-CELIV method. The hole and electron mobilities were found to be heavily imbalanced in the optimised 3:1 PCBM:PCPDTBT bulk heterojunction.

  14. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    International Nuclear Information System (INIS)

    Rana, Aniket; Lochan, Abhiram; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.; Gupta, Neeraj; Sharma, G. D.

    2016-01-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  15. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    Science.gov (United States)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  16. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  17. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S. [Department of Material Science and Engineering, Rensselaer Polytechnic Institute, 110 8th street, Troy, New York 12180 (United States)

    2016-08-07

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  18. Photogeneration and decay of charge carriers in hybrid bulk heterojunctions of ZnO nanoparticles and conjugated polymers

    NARCIS (Netherlands)

    Quist, P.A.C.; Beek, W.J.E.; Wienk, M.M.; Janssen, R.A.J.; Savenije, T.J.; Siebbeles, L.D.A.

    2006-01-01

    The photogeneration and decay of charge carriers in blend films of ZnO nanoparticles (diam. 5 nm) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) or poly(3-hexylthiophene) (P3HT) were studied by means of microwave-photoconductance measurements. Excitation of the

  19. Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols

    NARCIS (Netherlands)

    Asadi, Kamal; Gholamrezaie, Fatemeh; Smits, Edsger C. P.; Blom, Paul W. M.; de Boer, Bert

    2007-01-01

    Charge carrier injection into two semiconducting polymers is investigated in field-effect transistors using gold source and drain electrodes that are modified by self-assembled monolayers of alkanethiols and perfluorinated alkanethiols. The presence of an interfacial dipole associated with the

  20. Highly charged ion trapping and cooling

    International Nuclear Information System (INIS)

    Beck, B. R.; Church, D. A.; Gruber, L.; Holder, J. P.; Schneider, D.; Steiger, J.

    1998-01-01

    In the past few years a cryogenic Penning trap (RETRAP) has been operational at the Electron Beam Ion Trap (EBIT) facility at Lawrence Livermore National Laboratory. The combination of RETRAP and EBIT provides a unique possibility of producing and re-trapping highly charged ions and cooling them to very low temperatures. Due to the high Coulomb potentials in such an ensemble of cold highly charged ions the Coulomb coupling parameter (the ratio of Coulomb potential to the thermal energy) can easily reach values of 172 and more. To study such systems is not only of interest in astrophysics to simulate White Dwarf star interiors but opens up new possibilities in a variety of areas (e.g. laser spectroscopy), cold highly charged ion beams

  1. Charged vortices in high-Tc superconductors

    International Nuclear Information System (INIS)

    Matsuda, Y.; Kumagai, K.

    2002-01-01

    It is well known that a vortex in type II superconductors traps a magnetic flux. Recently the possibility that a vortex can accumulate a finite electric charge as well has come to be realized. The sign and magnitude of the vortex charge not only is closely related to the microscopic electronic structure of the vortex, but also strongly affects the dynamical properties of the vortex. In this chapter we demonstrate that a vortex in high-T c superconductors (HTSC) indeed traps a finite electronic charge, using the high resolution measurements of the nuclear quadrupole frequencies. We then discuss the vortex Hall anomaly whose relation with the vortex charging effect has recently received considerable attention. We show that the sign of the trapped charge is opposite to the sign predicted by the conventional BCS theory and deviation of the magnitude of the charge from the theory is also significant. We also show that the electronic structure of underlying system is responsible for the Hall sign in the vortex state and again the Hall sign is opposite to the sign predicted by the BCS theory. It appears that these unexpected features observed in both electrostatics and dynamics of the vortex may be attributed to the novel electronic structure of the vortex in HTSC. (orig.)

  2. High Charge-Carrier Mobility of 2.5 cm(2) V(-1) s(-1) from a Water-Borne Colloid of a Polymeric Semiconductor via Smart Surfactant Engineering.

    Science.gov (United States)

    Cho, Jangwhan; Cheon, Kwang Hee; Ahn, Hyungju; Park, Kwang Hun; Kwon, Soon-Ki; Kim, Yun-Hi; Chung, Dae Sung

    2015-10-07

    Semiconducting polymer nanoparticles dispersed in water are synthesized by a novel method utilizing non-ionic surfactants. By developing a smart surfactant engineering technique involving a selective post-removal process of surfactants, an unprecedentedly high mobility of 2.51 cm(2) V(-1) s(-1) from a water-borne colloid is demonstrated for the first time. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Beta decay of highly charged ions

    International Nuclear Information System (INIS)

    Litvinov, Yuri A; Bosch, Fritz

    2011-01-01

    Beta decay of highly charged ions has attracted much attention in recent years. An obvious motivation for this research is that stellar nucleosynthesis proceeds at high temperatures where the involved atoms are highly ionized. Another important reason is addressing decays of well-defined quantum-mechanical systems, such as one-electron ions where all interactions with other electrons are excluded. The largest modifications of nuclear half-lives with respect to neutral atoms have been observed in beta decay of highly charged ions. These studies can be performed solely at ion storage rings and ion traps, because there high atomic charge states can be preserved for extended periods of time (up to several hours). Currently, all experimental results available in this field originate from experiments at the heavy-ion complex GSI in Darmstadt. There, the fragment separator facility FRS allows the production and separation of exotic, highly charged nuclides, which can then be stored and investigated in the storage ring facility ESR. In this review, we present and discuss in particular two-body beta decays, namely bound-state beta decay and orbital electron capture. Although we focus on experiments conducted at GSI, we will also attempt to provide general requirements common to any other experiment in this context. Finally, we address challenging but not yet performed experiments and we give prospects for the new radioactive beam facilities, such as FAIR in Darmstadt, IMP in Lanzhou and RIKEN in Wako.

  4. The effects of free volumes on charge carrier transport in polysilanes probed by positron annihilation

    International Nuclear Information System (INIS)

    Seki, Shu; Terashima, Y.; Kunimi, Y.; Kawamori, T.; Tashiro, M.; Honda, Y.; Tagawa, S.

    2003-01-01

    Free volume characteristics were investigated by positron annihilation technique in poly(n-alkylphenylsilane)s with a variety length of n-alkyl chains from methyl (C1) to n-dodecyl (C12). The average radius of free volume: R changes in two steps. An increase in R is observed with an elongation of n-alkyl side-groups from C1 to n-pentyl (C5), followed by an abrupt decrease in R between C5 and n-hexyl (C6), and a gradual increase by further elongation from C6 to C12. The sudden decrease in R at C5 and C6 gives a good interpretation to the reduction of inter-site hopping distances and their fluctuation for the charge carrier (hole) transport estimated by time-of-flight measurements. The values of free volume fraction in the polymers mainly reflect the density of the polymers; however, differences in the microscopic inter-molecular structure are also observed for poly(n-hexylphenylsilane) in the present study

  5. Field effect measurements on charge carrier mobilities in various polymer-fullerene blend compositions

    International Nuclear Information System (INIS)

    Hauff, Elizabeth von; Parisi, Juergen; Dyakonov, Vladimir

    2006-01-01

    In this study we investigated materials typically used in polymer photovoltaics. Field effect measurements were performed in order to determine the hole mobilities in the conjugated polymer poly(3-hexylthiophene) (P3HT) and the electron mobilities in the methanofullerene[6,6]-phenyl C 61 -butyric acid methyl ester (PCBM), and, particularly, in the polymer-fullerene composite blends. Regarding the pure films, electron mobilities in PCBM were found to be in the 10 -2 cm 2 /Vs range, and hole mobilities in P3HT were found to be in the 10 -3 cm2/Vs range. In the PCBM:P3HT blends, it was found that varying the PCBM content in PCBM:P3HT blends led to a steep increase in electron mobility with increasing PCBM content, while the hole mobility was found to slightly decrease with the increasing PCBM concentration. In 2:1 PCBM:P3HT tempered blends, the charge carrier mobilities were found to be roughly balanced, at 10 -3 cm 2 /Vs. For improved electron transport in the blends, tempering was found to be crucial

  6. Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors

    KAUST Repository

    Choi, Hyun Ho; Rodionov, Yaroslav I.; Paterson, Alexandra F.; Panidi, Julianna; Saranin, Danila; Kharlamov, Nikolai; Didenko, Sergei I.; Anthopoulos, Thomas D.; Cho, Kilwon; Podzorov, Vitaly

    2018-01-01

    Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

  7. Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

    Science.gov (United States)

    Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

    2017-07-01

    Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

  8. Charge-carrier transport and recombination in heteroepitaxial CdTe

    International Nuclear Information System (INIS)

    Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-01-01

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  9. Corneal permeation properties of a charged lipid nanoparticle carrier containing dexamethasone

    Science.gov (United States)

    Ban, Junfeng; Zhang, Yan; Huang, Xin; Deng, Guanghan; Hou, Dongzhi; Chen, Yanzhong; Lu, Zhufen

    2017-01-01

    Drug delivery carriers can maintain effective therapeutic concentrations in the eye. To this end, we developed lipid nanoparticles (L/NPs) in which the surface was modified with positively charged chitosan, which engaged in hydrogen bonding with the phospholipid membrane. We evaluated in vitro corneal permeability and release characteristics, ocular irritation, and drug dynamics of modified and unmodified L/NPs in aqueous humor. The size of L/NPs was uniform and showed a narrow distribution. Corneal permeation was altered by the presence of chitosan and was dependent on particle size; the apparent permeability coefficient of dexamethasone increased by 2.7 and 1.8 times for chitosan-modified and unmodified L/NPs, respectively. In conclusion, a chitosan-modified system could be a promising method for increasing the ocular bioavailability of unmodified L/NPs by enhancing their retention time and permeation into the cornea. These findings provide a theoretical basis for the development of effective drug delivery systems in the treatment of ocular disease. PMID:28243093

  10. InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

    Science.gov (United States)

    Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

    2018-03-01

    We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

  11. Storage of charge carriers on emitter molecules in organic light-emitting diodes

    Science.gov (United States)

    Weichsel, Caroline; Burtone, Lorenzo; Reineke, Sebastian; Hintschich, Susanne I.; Gather, Malte C.; Leo, Karl; Lüssem, Björn

    2012-08-01

    Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)2(acac)] are studied by time-resolved electroluminescence measurements. A transient overshoot after voltage turn-off is found, which is attributed to electron accumulation on Ir(MDQ)2(acac) molecules. The mechanism is verified via impedance spectroscopy and by application of positive and negative off-voltages. We calculate the density of accumulated electrons and find that it scales linearly with the doping concentration of the emitter. Using thin quenching layers, we locate the position of the emission zone during normal OLED operation and after voltage turn-off. In addition, the transient overshoot is also observed in three-color white-emitting OLEDs. By time- and spectrally resolved measurements using a streak camera, we directly attribute the overshoot to electron accumulation on Ir(MDQ)2(acac). We propose that similar processes are present in many state-of-the-art OLEDs and believe that the quantification of charge carrier storage will help to improve the efficiency of OLEDs.

  12. Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors

    KAUST Repository

    Choi, Hyun Ho

    2018-04-30

    Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

  13. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya

    2015-02-12

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

  14. High power terahertz induced carrier multiplication in Silicon

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof

    2015-01-01

    The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

  15. Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

    KAUST Repository

    Mondal, Rajib

    2011-01-01

    A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.

  16. High Charge Carrier Mobility Polymers for Organic Transistors

    OpenAIRE

    Erdmann, Tim

    2017-01-01

    I) Introduction p-Conjugated polymers inherently combine electronic properties of inorganic semiconductor crystals and material characteristics of organic plastics due to their special molecular design. This unique combination has led to developing new unconventional optoelectronic technologies and, further, resulted in the evolution of semiconducting polymers (SCPs) as fundamental components for novel electronic devices, such as organic field-effect transistors (OFETs), organic light-emit...

  17. Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

    Science.gov (United States)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

    1976-01-01

    The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

  18. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Science.gov (United States)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  19. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J.; Gajdos, F.; Blumberger, J., E-mail: j.blumberger@ucl.ac.uk [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

    2016-08-14

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  20. On the definition of dielectric permittivity for media with temporal dispersion in the presence of free charge carriers

    International Nuclear Information System (INIS)

    Bordag, M; Geyer, B; Klimchitskaya, G L; Mostepanenko, V M

    2010-01-01

    We show that in the presence of free charge carriers the definition of the frequency-dependent dielectric permittivity requires additional regularization. As an example, the dielectric permittivity of the Drude model is considered and its time-dependent counterpart is derived and analyzed. The respective electric displacement cannot be represented in terms of the standard Fourier integral. The regularization procedure allowing the circumvention of these difficulties is suggested. For the purpose of comparison it is shown that the frequency-dependent dielectric permittivity of insulators satisfies all rigorous mathematical criteria. This permits us to conclude that in the presence of free charge carriers the concept of dielectric permittivity is not as well defined as for insulators and we make a link to widely discussed puzzles in the theory of thermal Casimir force which might be caused by the use of this kind of permittivities.

  1. On the definition of dielectric permittivity for media with temporal dispersion in the presence of free charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Bordag, M; Geyer, B; Klimchitskaya, G L; Mostepanenko, V M [Institute for Theoretical Physics, Leipzig University, Postfach 100920, D-04009, Leipzig (Germany)

    2010-01-08

    We show that in the presence of free charge carriers the definition of the frequency-dependent dielectric permittivity requires additional regularization. As an example, the dielectric permittivity of the Drude model is considered and its time-dependent counterpart is derived and analyzed. The respective electric displacement cannot be represented in terms of the standard Fourier integral. The regularization procedure allowing the circumvention of these difficulties is suggested. For the purpose of comparison it is shown that the frequency-dependent dielectric permittivity of insulators satisfies all rigorous mathematical criteria. This permits us to conclude that in the presence of free charge carriers the concept of dielectric permittivity is not as well defined as for insulators and we make a link to widely discussed puzzles in the theory of thermal Casimir force which might be caused by the use of this kind of permittivities.

  2. Precision laser spectroscopy of highly charged ions

    International Nuclear Information System (INIS)

    Kuehl, T.; Borneis, S.; Becker, S.; Dax, A.; Engel, T.; Grieser, R.; Huber, G.; Klaft, I.; Klepper, O.; Kohl, A.; Marx, D.; Meier, K.; Neumann, R.; Schmitt, F.; Seelig, P.; Voelker, L.

    1996-01-01

    Recently, intense beams of highly charged ions have become available at heavy ion cooler rings. The obstacle for producing these highly interesting candidates is the large binding energy of K-shell electrons in heavy systems in excess of 100 keV. One way to remove these electrons is to strip them off by passing the ion through material. In the cooler ring, the ions are cooled to a well defined velocity. At the SIS/ESR complex it is possible to produce, store, and cool highly charged ions up to bare uranium with intensities exceeding 10 8 atoms in the ring. This opens the door for precision laser spectroscopy of hydrogenlike-heavy ions, e.g. 209 Bi 82+ , and allows to examine the interaction of the single electron with the large fields of the heavy nucleus, exceeding any artificially produced electric and magnetic fields by orders of magnitude. In the electron cooler the interaction of electrons and highly charged ions otherwise only present in the hottest plasmas can be studied. (orig.)

  3. High-LET charged particle radiotherapy

    International Nuclear Information System (INIS)

    Castro, J.R.; California Univ., San Francisco, CA

    1991-07-01

    The Department of Radiation Oncology at UCSF Medical Center and the Radiation Oncology Department at UC Lawrence Berkeley Laboratory have been evaluating the use of high LET charged particle radiotherapy in a Phase 1--2 research trial ongoing since 1979. In this clinical trail, 239 patients have received at least 10 Gy (physical) minimum tumor dose with neon ions, meaning that at least one-half of their total treatment was given with high-LET charged particle therapy. Ninety-one patients received all of their therapy with neon ions. Of the 239 patients irradiated, target sites included lesions in the skin, subcutaneous tissues, head and neck such as paranasal sinuses, nasopharynx and salivary glands (major and minor), skull base and juxtaspinal area, GI tract including esophagus, pancreas and biliary tract, prostate, lung, soft tissue and bone. Analysis of these patients has been carried out with a minimum followup period of 2 years

  4. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    Science.gov (United States)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  5. Mechanisms for production of highly charged ions

    International Nuclear Information System (INIS)

    McGuire, J.H.

    1987-01-01

    Various experimental data at high collision velocity are interpreted in terms of direct (D) and rearrangement (R) mechanisms for production of multiply charged ions. We consider double ionization in helium by protons, electrons, heavy ions, antiprotons, positrons and photons. Qualitative differences are discussed in the context of the R and D mechanisms. Multiple ionization in many electron atoms is considered as is simultaneous capture and ionization and fragmentation of methane molecules. Some other theoretical methods are briefly discussed. (orig.)

  6. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-04-07

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  7. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.; Howard, Ian A.; Sweetnam, Sean; Burke, Timothy M.; McGehee, Michael D.; Laquai, Fré dé ric

    2015-01-01

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  8. Facile synthesis of bismuth oxyhalide nanosheet films with distinct conduction type and photo-induced charge carrier behavior

    Science.gov (United States)

    Jia, Huimin; He, Weiwei; Zhang, Beibei; Yao, Lei; Yang, Xiaokai; Zheng, Zhi

    2018-05-01

    A modified successive ionic layer adsorption and reaction (SILAR) method was developed to fabricate 2D ordered BiOX (X = CI, Br, I) nanosheet array films on FTO substrates at room temperature. The formation of BiOX films were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-vis absorption spectroscopy, and X-ray photoelectron spectroscopy (XPS). The semiconductor surface states determine the type of semiconductor. Although BiOCI, BiOBr and BiOI belong to the bismuth oxyhalide semiconductor family and possess similar crystal and electronic structures, they show different conductivity types due to their respective surface states. Mott-Schottky curve results demonstrate that the BiOCl and BiOI nanosheet arrays display n-type semiconductor properties, while the BiOBr films exhibit p-type semiconductor properties. Assisted by surface photovoltage (SPV) and transient photovoltage (TPV) techniques, the photoinduced charge transfer dynamics on the surface/interface of the BiOX/FTO nanosheet films were systematically and comparatively investigated. As revealed by the results, both the separation and transfer dynamics of the photo-induced carrier are influenced by film thickness.

  9. Spectroscopy with trapped highly charged ions

    International Nuclear Information System (INIS)

    Beiersdorfer, Peter

    2009-01-01

    We give an overview of atomic spectroscopy performed on electron beam ion traps at various locations throughout the world. Spectroscopy at these facilities contributes to various areas of science and engineering, including but not limited to basic atomic physics, astrophysics, extreme ultraviolet lithography, and the development of density and temperature diagnostics of fusion plasmas. These contributions are accomplished by generating, for example, spectral surveys, making precise radiative lifetime measurements, accounting for radiative power emitted in a given wavelength band, illucidating isotopic effects, and testing collisional-radiative models. While spectroscopy with electron beam ion traps had originally focused on the x-ray emission from highly charged ions interacting with the electron beam, the operating modes of such devices have expanded to study radiation in almost all wavelength bands from the visible to the hard x-ray region; and at several facilities the ions can be studied even in the absence of an electron beam. Photon emission after charge exchange or laser excitation has been observed; and the work is no longer restricted to highly charged ions. Much of the experimental capabilities are unique to electron beam ion traps, and the work performed with these devices cannot be undertaken elsewhere. However, in other areas the work on electron beam ion traps rivals the spectroscopy performed with conventional ion traps or heavy-ion storage rings. The examples we present highlight many of the capabilities of the existing electron beam ion traps and their contributions to physics.

  10. High gradient lens for charged particle beam

    Science.gov (United States)

    Chen, Yu-Jiuan

    2014-04-29

    Methods and devices enable shaping of a charged particle beam. A dynamically adjustable electric lens includes a series of alternating a series of alternating layers of insulators and conductors with a hollow center. The series of alternating layers when stacked together form a high gradient insulator (HGI) tube to allow propagation of the charged particle beam through the hollow center of the HGI tube. A plurality of transmission lines are connected to a plurality of sections of the HGI tube, and one or more voltage sources are provided to supply an adjustable voltage value to each transmission line of the plurality of transmission lines. By changing the voltage values supplied to each section of the HGI tube, any desired electric field can be established across the HGI tube. This way various functionalities including focusing, defocusing, acceleration, deceleration, intensity modulation and others can be effectuated on a time varying basis.

  11. High Dynamic Optimized Carrier Loop Improvement for Tracking Doppler Rates

    Directory of Open Access Journals (Sweden)

    Amirhossein Fereidountabar

    2015-01-01

    Full Text Available Mathematical analysis and optimization of a carrier tracking loop are presented. Due to fast changing of the carrier frequency in some satellite systems, such as Low Earth Orbit (LEO or Global Positioning System (GPS, or some planes like Unmanned Aerial Vehicles (UAVs, high dynamic tracking loops play a very important role. In this paper an optimized tracking loop consisting of a third-order Phase Locked Loop (PLL assisted by a second-order Frequency Locked Loop (FLL for UAVs is proposed and discussed. Based on this structure an optimal loop has been designed. The main advantages of this approach are the reduction of the computation complexity and smaller phase error. The paper shows the simulation results, comparing them with a previous work.

  12. Unraveling Unprecedented Charge Carrier Mobility through Structure Property Relationship of Four Isomers of Didodecyl[1]benzothieno[3,2-b][1]benzothiophene.

    Science.gov (United States)

    Tsutsui, Yusuke; Schweicher, Guillaume; Chattopadhyay, Basab; Sakurai, Tsuneaki; Arlin, Jean-Baptiste; Ruzié, Christian; Aliev, Almaz; Ciesielski, Artur; Colella, Silvia; Kennedy, Alan R; Lemaur, Vincent; Olivier, Yoann; Hadji, Rachid; Sanguinet, Lionel; Castet, Frédéric; Osella, Silvio; Dudenko, Dmytro; Beljonne, David; Cornil, Jérôme; Samorì, Paolo; Seki, Shu; Geerts, Yves H

    2016-09-01

    The structural and electronic properties of four isomers of didodecyl[1]-benzothieno[3,2-b][1]benzothiophene (C12-BTBT) have been investigated. Results show the strong impact of the molecular packing on charge carrier transport and electronic polarization properties. Field-induced time-resolved microwave conductivity measurements unravel an unprecedented high average interfacial mobility of 170 cm(2) V(-1) s(-1) for the 2,7-isomer, holding great promise for the field of organic electronics. © 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Study of the Bulk Charge Carrier Dynamics in Anatase and Rutile TiO2 Single Crystals by Femtosecond Time Resolved Spectroscopy

    KAUST Repository

    Maity, Partha; Mohammed, Omar F.; Katsiev, Khabiboulakh; Idriss, Hicham

    2018-01-01

    as the best model for fundamental studies. Their ultrafast charge carrier dynamics especially on TiO2 anatase single crystal (the most active phase) are unresolved. Here femtosecond time resolved spectroscopy (TRS) was carried out to explore the dynamics

  14. Multi-THz spectroscopy of mobile charge carriers in P3HT:PCBM on a sub-100 fs time scale

    DEFF Research Database (Denmark)

    Cooke, David G.; Krebs, Frederik C; Jepsen, Peter Uhd

    2013-01-01

    The dynamics of mobile charge carrier generation in polymer bulk heterojunction films is of vital importance to the development of more efficient organic photovoltaics. As with conventional semiconductors, the optical signatures of mobile carriers lie in the far-infrared (1-30 THz) although...

  15. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    International Nuclear Information System (INIS)

    Auden, E.C.; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-01-01

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0_._3Ga_0_._7As/GaAs/Al_0_._2_5Ga_0_._7_5As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  16. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    Energy Technology Data Exchange (ETDEWEB)

    Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-05-15

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  17. Dependence of the carrier mobility and trapped charge limited conduction on silver nanoparticles embedment in doped polypyrrole nanostructures

    Science.gov (United States)

    Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

    2013-10-01

    The present article demonstrates an intensive study upon the temperature dependent current density (J)-voltage (V) characteristics of moderately doped polypyrrole nanostructure and its silver nanoparticles incorporated nanocomposites. Analysis of the measured J-V characteristics of different synthesized nano-structured samples within a wide temperature range revealed that the electrical conduction behavior followed a trapped charge-limited conduction and a transition of charge transport mechanism from deep exponential trap limited conduction to shallow traps limited conduction had been occurred due to the incorporation of silver nanoparticles within the polypyrrole matrix. A direct evaluation of carrier mobility as a function of electric field and temperature from the measured J-V characteristics illustrates that the incorporation of silver nanoparticles within the polypyrrole matrix enhances the carrier mobility at a large extent by reducing the concentration of traps within the polypyrrole matrix. The calculated mobility is consistent with the Poole-Frenkel form for the electrical field up to a certain temperature range. The nonlinear low temperature dependency of mobility of all the nanostructured samples was explained by Mott variable range hopping conduction mechanisms. Quantitative information regarding the charge transport parameters obtained from the above study would help to extend optimization strategies for the fabrication of new organic semiconducting nano-structured devices.

  18. Tungsten-based nanomaterials (WO{sub 3} & Bi{sub 2}WO{sub 6}): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Girish Kumar, S., E-mail: girichem@yahoo.co.in; Koteswara Rao, K.S.R., E-mail: raoksrk@gmail.com

    2015-11-15

    Graphical abstract: - Highlights: • Photocatalytic applications of WO{sub 3} and Bi{sub 2}WO{sub 6} based nanomaterial are reviewed. • Modifications to improve their performance are highlighted. • Charge carrier generation–separation–recombination is discussed. • Challenges and future prospects in this area are addressed. - Abstract: Heterogeneous photocatalysis is an ideal green energy technology for the purification of wastewater. Although titania dominates as the reference photocatalyst, its wide band gap is a bottleneck for extended utility. Thus, search for non-TiO{sub 2} based nanomaterials has become an active area of research in recent years. In this regard, visible light absorbing polycrystalline WO{sub 3} (2.4–2.8 eV) and Bi{sub 2}WO{sub 6} (2.8 eV) with versatile structure-electronic properties has gained considerable interest to promote the photocatalytic reactions. These materials are also explored in selective functional group transformation in organic reactions, because of low reduction and oxidation potential of WO{sub 3} CB and Bi{sub 2}WO{sub 6} VB, respectively. In this focused review, various strategies such as foreign ion doping, noble metal deposition and heterostructuring with other semiconductors designed for efficient photocatalysis is discussed. These modifications not only extend the optical response to longer wavelengths, but also prolong the life-time of the charge carriers and strengthen the photocatalyst stability. The changes in the surface-bulk properties and the charge carrier transfer dynamics associated with each modification correlating to the high activity are emphasized. The presence of oxidizing agents, surface modification with Cu{sup 2+} ions and synthesis of exposed facets to promote the degradation rate is highlighted. In depth study on these nanomaterials is likely to sustain interest in wastewater remediation and envisaged to signify in various green energy applications.

  19. Effects of carrier concentrations on the charge transport properties in monolayer silicene

    International Nuclear Information System (INIS)

    Abidin, B I; Yeoh, K H; Yong, T K; Ong, D S

    2017-01-01

    Using analytical band Monte Carlo approach, we have carried out a systematic study on the effects of carrier concentrations on the steady-state and transient electron transports that occur within a monolayer silicene. In particular, we have observed the following: First at steady-state, the electron mobility reduces with higher carrier concentrations. Secondly, in the transient regime we found that the drift velocity overshoot can be controlled by varying the carrier concentrations. We uncover that at carrier concentration of 1  ×  10 13 cm −2 , the drift velocity overshoot can reach up to 3.8  ×  10 7 cm s −1 which is close to the steady-state drift velocity saturation of graphene. Thirdly, the distance of the velocity over shoot can be further extended with higher carrier concentrations. Our findings could be useful and can be used as benchmark for future development of nanoscale silicene based devices. (paper)

  20. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  1. The quantic distribution of mobile carriers in a surface charge coupled device

    International Nuclear Information System (INIS)

    Ionescu, M.

    1977-01-01

    The quantic distribution of the electrons in a surface charge coupled device (CCD), for a MIS structure with a real insulator (finite difference energy between the conduction bands of the insulator and of the semiconductor) is presented. A fundamental limitation of the charge transfer in a surface CCD is obtained. (author)

  2. Charge carrier mobility in poly[methyl(phenyl)silylene] studied by time-resolved terahertz spectroscopy and molecular modeling

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Kratochvílová, Irena; Kužel, Petr; Šebera, Jakub; Kochalska, Anna; Nožár, Juraj; Nešpůrek, Stanislav

    2011-01-01

    Roč. 13, č. 7 (2011), s. 2850-2856 ISSN 1463-9076 R&D Projects: GA ČR(CZ) GP202/09/P099; GA ČR GA203/08/1594; GA AV ČR KAN401770651; GA MŠk LC512; GA ČR(CZ) GAP304/10/1951 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40500505 Keywords : molecular electronics * THz spectroscopy * charge carrier mobility Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.573, year: 2011

  3. Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

    Science.gov (United States)

    Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

    2014-12-21

    We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

  4. Charge carrier motion in disordered conjugated polymers: a multiscale ab-initio study

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    We developed an ab-initio multiscale method for simulation of carrier transport in large disordered systems, based on direct calculation of electronic states and electron-phonon coupling constants. It enabled us to obtain the never seen before rich microscopic details of carrier motion in conjugated polymers, which led us to question several assumptions of phenomenological models, widely used in such systems. The macroscopic mobility of disordered poly(3- hexylthiophene) (P3HT) polymer, extracted from our simulation, is in agreement with experimental results from the literature.

  5. Chemical vapour deposition diamond. Charge carrier movement at low temperatures and use in time-critical applications

    International Nuclear Information System (INIS)

    Jansen, Hendrik

    2013-09-01

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, over laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  6. Nanocrystals in the glass and centers of localization of free charge carriers in the thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2012-01-01

    Conduction mechanism of doped silicate glass (DSG) based on existence of nanocrystals in the glass is proposed. These nanocrystals act as localization centers of free charge carriers. Random distribution of the nanocrystal's sizes and distances between them leads to charge transport by variable length hopping. It is shown that dopant atoms generate the narrow impurity subband of 0.03 eV in width. This subband joins close to the glass valence band top or slightly (less than 0.01 eV) separated from the last. What is why the hopping mechanism coexists with thermal activation one and at low temperatures (T -n ), 0.25 800 K) structure transitions of nanocrystals take place and conductivity of DSG decreases sharply. Beyond of the minimum of conductivity (above 1000 K) energy gap is formed between the impurity subband and the valence band top of glass, so DSG behaves like a typical semiconductor. (author)

  7. Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

    CERN Document Server

    Jansen, Hendrik; Pernegger, Heinz

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  8. Theoretical models of the spin-dependent charge-carrier dynamics in metals and semiconductors

    International Nuclear Information System (INIS)

    Krauss, Michael

    2010-01-01

    This thesis is concerned with spin-dependent carrier dynamics in semiconductors and metals. We are especially interested in the dynamics on ultrashort timescales, which can be driven by ultrashort optical excitation, and use of a theoretical description in terms of the dynamical spin-density matrix. The first part of this thesis is concerned with spin-dependent carrier dynamics in bulk GaAs. For conduction electrons in GaAs, the most important mechanisms, by which an electron spin polarization can be destroyed, are the Dyakonov-Perel and Bir-Aronov-Pikus mechanisms. For the Dyakonov-Perel effect, our treatment is the first calculation of the dynamics of the spindensity matrix for bulk GaAs. From our microsopic calculation, we extract spin-dephasing times. In particular, we can describe the dependence of the spin-dephasing time for a wide range of n-doping concentrations and explain the spin-dephasing dynamics in and out of the motional-narrowing regime. For the Bir-Aronov-Pikus mechanism, i.e., the exchange interaction of electronics with holes, approximate relaxation times for limiting cases were derived about 30 years ago. We show that these approaches provide an incomplete picture of spin relaxation, and are only valid for high or low densities, whereas the microscopic calculation is capable of explaining the electronic dynamics also for intermediate doping densities, which are most interesting for typical experiments. The spin-dependent hole dynamics in GaAs is much faster than that of electrons, because the p-like hole bands experience the spin-orbit interaction directly, rather than through the interaction with other bands. The resulting spin relaxation is sometimes referred to as an Elliott-Yafet mechanism. For the first time, we present results for the microscopic dynamics of this mechanism for holes in bulk GaAs, and we discuss the different results that may be obtained with different measurement techniques. We also analyze the importance of ''spin hot

  9. Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

    2015-10-15

    The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

  10. Charge transport in organic transistors accounting for a wide distribution of carrier energies, Part I : Theory

    NARCIS (Netherlands)

    Torricelli, F.

    2012-01-01

    An extended theory of carrier hopping transport in organic transistors is proposed. According to many experimental studies, the density of localized states in organic thin-film transistors can be described by a double-exponential function. In this work, using a percolation model of hopping, the

  11. Optimization of the charge-carrier injection in organic light-emitting diodes; Optimierung der Ladungstraegerinjektion in organische Leuchtdioden

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Ralf

    2009-07-01

    Nowadays based on resource shortage and climate warming there is a big interest in the use of power-saving lighting sources. Therefore the research on white organic light emitting devices (OLEDs) has gained importance during the last years. To obtain high power efficiencies in OLEDs it is necessary to provide low driving voltages. That can be realised by the use of doped transport layers, in which donors and acceptors are coevaporated with organic transport materials. In this thesis I discuss novel p-type and n-type doping materials for small organic molecules which decrease the ohmic loss in organic transport layers used in OLEDs. This reduction of the resistance is caused by an increase of the intrinsic charge carrier density and therefore an increase of the conductivity. First single layer devices are used to analyse the properties of potential doping materials by varying the doping concentration. The tested p-doping materials are commercially available metal oxides (MoO{sub 3} and Re{sub 2}O{sub 7}) and metal-organic complexes. Both metal oxides show a strong conductivity improvement of up to 7 orders of magnitude. The investigated n-doping materials are alkali salts, metal-organic and organic complexes. Among the alkali salts Cs{sub 2}CO{sub 3} is the best material in test with a conductivity enhancement of up to 7 orders of magnitude. For this material class I focused on the question whether the metal cation or the organic anion causes the doping effect. Using similar Caesium salts differently strong doping effects were obtained. Therefore I came to the conclusion that beside the metal cation also the anion plays a role for the doping effect. Secondly I performed a series of multilayer devices for two doping materials (Re{sub 2}O{sub 7} as acceptor and Cs{sub 2}CO{sub 3} as donor) to separate the transport and injection enhancement. The results show that a doped transport layer improves the hole or electron injection into an undoped material by several orders

  12. High speed auto-charging system for condenser bank

    International Nuclear Information System (INIS)

    Mizuno, Yasunori; Bito, Fumio; Fujita, Kazuhiko; Sometani, Taro

    1987-01-01

    A current-control type high-speed charging system, which is intended for auto-charging of the condenser bank, is developed. Moreover, the system can also serve to compensate the current leakage from the condenser bank so that the charged voltage can be kept constant. The system consists of a sequence circuit, a charging current control circuit (or auto-charging circuit) and a charging circuit. The auto-charging circuit is characterized by the use of a triac to control the current. The current, controlled by the circuit, is supplied to the condenser bank through a step-up transformer and voltage doubler rectifier circuit. It is demonstrated that the use of the high-speed auto-charging circuit can largely decrease the required charging time, compared to constant voltage charging. In addition, the compensation function is shown to serve effectively for maintaining a constant voltage after the completion of charging. The required charging time is decreases as the charging current increases. The maximum charging current is decided by the rating of the traic and the current rating of the rectifier diode in the secondary circuit. Major components of these circuits have decreased impedances to minimize the effect of noise, so that the possibility of an accident can be eliminated. Other various improvements are made in the grounding circuit and the charging protection circuit in order to ensure safety. (Nogami, K.)

  13. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, Felix J.; Vogelsang, Jan, E-mail: jan.vogelsang@physik.uni-regensburg.de; Lupton, John M. [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätsstrasse 31, 93053 Regensburg (Germany)

    2016-06-27

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the opposite: the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The results are of interest to developing a microscopic understanding of the intrinsic charge-exciton quenching interaction in devices.

  14. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    International Nuclear Information System (INIS)

    Hwang, Hyun-Sik; Khang, Dahl-Young

    2015-01-01

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s

  15. Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-07-15

    To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Determination of energy band diagram and charge carrier mobility of white emitting polymer from optical, electrical and impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Mohd Sarjidan, M.A., E-mail: mohd.arif@um.edu.my; Mohd Mokhtar, H.A.; Abd Majid, W.H., E-mail: q3haliza@um.edu.my

    2015-03-15

    A single-layer white polymer light-emitting device (WPLED) has been fabricated using spin coating technique. The device was constructed as ITO/PEDOT:PSS(50 nm)/SPW-111(50 nm)/LiF(1 nm)/Al(100 nm). Indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) are used as the transparent anode. SPW-111 is fabricated as a white emissive layer and lithium fluoride (LiF) and aluminum (Al) are used as reflecting cathode. Energy band diagram of the device was estimated from a combination of ultraviolet–visible (UV–vis) and current–voltage (J–V) analyses. Charge carrier mobility (μ) of PLED was evaluated using negative differential susceptance (−ΔB) method from impedance spectroscopy (IS) analysis. The calculated μ of the SPW-111 device is in the magnitude of 10{sup −6} cm{sup 2}/V/s. - Highlights: • Single layer PLED has been fabricated with spin-coating technique and device performance has been evaluated. • Energy band diagram of the SPW-111 is estimated from optical and electrical analyses. • Charge carrier mobility of the SPW-111 materials is obtained by impedance spectroscopy.

  17. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    International Nuclear Information System (INIS)

    Teyssedre, G.; Laurent, C.; Vu, T. T. N.

    2015-01-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10 −14 –10 −13  m 2  V −1  s −1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets

  18. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Science.gov (United States)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  19. Production of High-Intensity, Highly Charged Ions

    CERN Document Server

    Gammino, S.

    2013-12-16

    In the past three decades, the development of nuclear physics facilities for fundamental and applied science purposes has required an increasing current of multicharged ion beams. Multiple ionization implies the formation of dense and energetic plasmas, which, in turn, requires specific plasma trapping configurations. Two types of ion source have been able to produce very high charge states in a reliable and reproducible way: electron beam ion sources (EBIS) and electron cyclotron resonance ion sources (ECRIS). Multiple ionization is also obtained in laser-generated plasmas (laser ion sources (LIS)), where the high-energy electrons and the extremely high electron density allow step-by-step ionization, but the reproducibility is poor. This chapter discusses the atomic physics background at the basis of the production of highly charged ions and describes the scientific and technological features of the most advanced ion sources. Particular attention is paid to ECRIS and the latest developments, since they now r...

  20. Renewable carbohydrates are a potential high-density hydrogen carrier

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y.-H. Percival [Biological Systems Engineering Department, 210-A Seitz Hall, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Institute for Critical Technology and Applied Sciences (ICTAS), Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); DOE BioEnergy Science Center (BESC), Oak Ridge, TN 37831 (United States)

    2010-10-15

    The possibility of using renewable biomass carbohydrates as a potential high-density hydrogen carrier is discussed here. Gravimetric density of polysaccharides is 14.8 H{sub 2} mass% where water can be recycled from PEM fuel cells or 8.33% H{sub 2} mass% without water recycling; volumetric densities of polysaccharides are >100 kg of H{sup 2}/m{sup 3}. Renewable carbohydrates (e.g., cellulosic materials and starch) are less expensive based on GJ than are other hydrogen carriers, such as hydrocarbons, biodiesel, methanol, ethanol, and ammonia. Biotransformation of carbohydrates to hydrogen by cell-free synthetic (enzymatic) pathway biotransformation (SyPaB) has numerous advantages, such as high product yield (12 H{sub 2}/glucose unit), 100% selectivity, high energy conversion efficiency (122%, based on combustion energy), high-purity hydrogen generated, mild reaction conditions, low-cost of bioreactor, few safety concerns, and nearly no toxicity hazards. Although SyPaB may suffer from current low reaction rates, numerous approaches for accelerating hydrogen production rates are proposed and discussed. Potential applications of carbohydrate-based hydrogen/electricity generation would include hydrogen bioreactors, home-size electricity generators, sugar batteries for portable electronics, sugar-powered passenger vehicles, and so on. Developments in thermostable enzymes as standardized building blocks for cell-free SyPaB projects, use of stable and low-cost biomimetic NAD cofactors, and accelerating reaction rates are among the top research and development priorities. International collaborations are urgently needed to solve the above obstacles within a short time. (author)

  1. Revealing charge carrier dynamics in squaraine:[6, 6]-phenyl-C 71-butyric acid methyl ester based organic solar cells

    Science.gov (United States)

    Rana, Aniket; Sharma, Chhavi; Prabhu, Deepak D.; Kumar, Mahesh; Karuvath, Yoosaf; Das, Suresh; Chand, Suresh; Singh, Rajiv K.

    2018-04-01

    Ultrafast charge carrier dynamics as well as the generation of polaron pair in squaraine (SQ) and squaraine:[6,6]-phenyl-C 71-butyric acid methyl ester (SQ:PCBM71) have been studied using ultrafast transient absorption spectroscopy (UTAS). The current study reveals that the pure SQ exhibits the creation of singlet and triplet states; however, incorporation of PCBM71 in SQ results in the formation of polaron pairs with ˜550ps lifetime, which in turn leads to the creation of free electrons in the device. We show that the considerable increment in monomolecular and bimolecular recombination in SQ:PCBM71 compared to pure SQ which describes the interfacial compatibility of SQ and PCBMC71 molecules. The present work not only provides the information about the carrier generation in SQ and SQ:PCBM71 but also gives the facts relating to the effect of PCBM71 mixing into the SQ which is very significant because the SQ has donor-acceptor-donor (D-A-D) structure and mixing one more acceptor can introduce more complex recombinations in the blend. These findings have been complimented by the charge transport study in the device using impedance spectroscopy. The various important transport parameters are transit time (τt), diffusion constant (Dn), global mobility (μ) and carrier lifetime (τr). The values of these parameters are 26.38 μs, 4.64x10-6 cm2s-1, 6.12x10-6 cm2V-1s-1 and 399 μs, respectively. To the best of our knowledge such study related to SQ is not present in the literature comprehensively.

  2. Production, transport and charge capture measurements of highly charged recoil ions

    International Nuclear Information System (INIS)

    Trebus, U.E.

    1989-01-01

    An experiment is described to study highly charged recoil ions on-line to the heavy accelerator UNILAC at GSI. The highly charged recoil ions are produced by heavy-ion bombardment of a gas target. Subsequently the slow highly charged recoil ions are extracted from the ionization volume, and guided through a beam transport line to a Wien filter for charge state selection and to a collision region to study charge transfer processes. Several experiments were carried out to show the efficient charge state separation. Charge states up to q = 15 were observed. When using a retarding field analyzer cross sections for single electron capture were determined for different charge states of Xe q+ for q = 4 to 11 and He gas. The experiments demonstrated increasing charge transfer cross sections with increasing charge state q and indicated the effect of near resonant charge capture for q = 6. The flexible data acquisition system used, is described and other future experiments, such as for instance in flight ion-trapping are indicated in the appendix

  3. Production, transport and charge capture measurements of highly charged recoil ions

    International Nuclear Information System (INIS)

    Trebus, U.E.

    1989-05-01

    An experiment is described to study highly charged recoil ions on-line to the heavy ion accelerator UNILAC at GSI. The highly charged recoil ions are produced by heavy ion bombardment of a gas target. Subsequently the slow highly charged recoil ions are extracted from the ionization volume, and guided through a beam transport line to a Wien filter for charge state selection and to a collision region to study charge transfer processes. Several experiments were carried out to show the efficient charge state separation. Charge states up to q=15 were observed. When using a retarding field analyzer cross sections for single electron capture were determined for different charge states of Xe q+ for q=4 to 11 and He gas. The experiments demonstrated increasing charge transfer cross sections with increasing charge state q and indicated the effect of near resonant charge capture for q=6. The flexible data acquisition system used, is described and other future experiments, such as for instance in flight ion-trapping are indicated in the appendix. (orig.)

  4. Charge carrier transport mechanisms in perovskite CdTiO3 fibers

    Directory of Open Access Journals (Sweden)

    Z. Imran

    2014-06-01

    Full Text Available Electrical transport properties of electrospun cadmium titanate (CdTiO3 fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC with traps at higher voltages at all temperatures (200 K – 420 K. Trap density in our fibers system is Nt = 6.27 × 1017 /cm3. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH from 200 K – 300 K. The localized density of states were found to be N(EF = 5.51 × 1021 eV−1 cm−3 at 2 V. Other VRH parameters such as hopping distance (Rhop and hopping energy (Whop were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO3 fibers efficient material for capacitive energy storage devices.

  5. Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

    Science.gov (United States)

    Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

    2018-05-01

    A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

  6. High charge state heavy ion production from a PIG source

    International Nuclear Information System (INIS)

    Bex, L.; Clark, D.J.; Ellsworth, C.E.; Flood, W.S.; Gough, R.A.; Holley, W.R.; Meriwether, J.R.; Morris, D.

    1975-03-01

    The comparison of pulsed vs. dc arc operation for nitrogen and argon shows a shift in charge distribution toward the higher charge states for the pulsed case. Tests with various magnetic field shapes along the arc column show a significant increase in high charge state output for a uniform field compared to the case with a field low at the cathodes. (U.S.)

  7. Charge Carrier Dynamics and pH Effect on Optical Properties of Anionic and Cationic Porphyrin-Graphene Oxide Composites

    Science.gov (United States)

    Bajjou, O.; Bakour, A.; Khenfouch, M.; Baitoul, M.; Mothudi, B.; Maaza, M.; Faulques, E.

    2018-02-01

    Composites of graphene oxide (GO) functionalized with Sn(V) tetrakis (4-pyridyl)porphyrin (SnTPyP2+) and meso-tetrakis(4-phenylsulfonic acid)porphyrin (H4TPPS4 2- ) were prepared at different pH values.Successful synthesis of water-soluble stable suspension of GO-SnTPyP2+ and GO-H4TPPS4 2-was confirmed using various spectroscopic techniques, including scanning electronic microscopy (SEM), Raman spectroscopy, and ultraviolet-visible (UV-Vis) absorption. Variation of the pH was found to strongly influence the optical properties of the GO-SnTPyP2+ and GO-H4TPPS4 2-composites, as demonstrated by the UV-Vis absorption results. Steady-state photoluminescence (PL) and time-resolved PL (TRPL) results for both composites showed PL quenching and decrease in the exciton mean lifetime, suggesting strong excited-state interactions between the different components. Moreover, charge carrier dynamics study revealed that insertion of GO into both porphyrin derivatives led to faster mean lifetime for excitons with a slight advantage in the case of the cationic porphyrin-GO composite, making it a better choice for charge separation applications thanks to the higher efficiency of charge/energy transfer interactions.

  8. Highly-correlated charges in polyelectrolyte gels

    Science.gov (United States)

    Sing, Charles; Zwanikken, Johannes; Olvera de La Cruz, Monica

    2013-03-01

    Polyelectrolyte gels are ubiquitous in polymer physics due to their attractive combination of structural and chemical features that permit the realization of ``environmentally responsive'' systems. The conventional conceptual picture of the volume response of these systems is based on a competition between osmotic and elastic effects. We elaborate on this fundamental understanding by including ion correlations through the use of liquid-state integral equation theory. This allows for a statistical mechanical representation of the state of the system that not only surpasses traditional Poisson-Boltzmann theories but also renders structural features in a highly accurate fashion. In particular, the local ion structure is elucidated, allowing for detailed articulation of charge inversion and condensation effects in the context of gel swelling. The inclusion of correlations has a number of ramifications that become apparent, with enhanced gel collapse and excluded volume competitions that give rise to novel and ion-dependent reentrant swelling effects. We expect this rigorous theory to prove instructive in understanding any number of gelated structures, such as chromosomes or designed synthetic materials for drug delivery.

  9. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers.

    Science.gov (United States)

    Sun, Baichuan; Barnard, Amanda S

    2016-08-07

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.

  10. High-throughput bioscreening system utilizing high-performance affinity magnetic carriers exhibiting minimal non-specific protein binding

    International Nuclear Information System (INIS)

    Hanyu, Naohiro; Nishio, Kosuke; Hatakeyama, Mamoru; Yasuno, Hiroshi; Tanaka, Toshiyuki; Tada, Masaru; Nakagawa, Takashi; Sandhu, Adarsh; Abe, Masanori; Handa, Hiroshi

    2009-01-01

    For affinity purification of drug target protein we have developed magnetic carriers, narrow in size distribution (184±9 nm), which exhibit minimal non-specific binding of unwanted proteins. The carriers were highly dispersed in aqueous solutions and highly resistant to organic solvents, which enabled immobilization of various hydrophobic chemicals as probes on the carrier surfaces. Utilizing the carriers we have automated the process of separation and purification of the target proteins that had been done by manual operation previously.

  11. Feature of polaronic charge carriers in polysilanes: Experimental and theoretical approach

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Kochalska, Anna; Nožár, Juraj; Kadashchuk, A.; Fishchuk, I. I.; Sworakowski, J.; Kajzar, F.

    2010-01-01

    Roč. 521, - (2010), s. 72-83 ISSN 1542-1406. [International Conference on Frontiers of Polymers and Advanced Materials /10./. Santiago, 27.09.2009-02.10.2009] R&D Projects: GA AV ČR IAA100100622; GA AV ČR KAN400720701 Institutional research plan: CEZ:AV0Z40500505 Keywords : binding energy * charge mobility * hopping transport Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.543, year: 2010

  12. Charge Carrier Dynamics of Methylammonium Lead-Iodide Perovskite Solar Cells

    OpenAIRE

    Neukom, Martin Thomas

    2016-01-01

    Transient opto-electrical measurements of methylammonium lead iodide (MALI) perovskite solar cells (PSCs) are performed and analyzed in order to elucidate the operating mechanisms. The current response to a light pulse or voltage pulse shows an extraordinarily broad dynamic range covering 9 orders of magnitude in time - from microseconds to minutes - until steady-state is reached. Evidence of a slowly changing charge density at the perovskite layer boundaries is found, which is most probably ...

  13. In-situ analysis of microwave conductivity and impedance spectroscopy for evaluation of charge carrier dynamics at interfaces

    Science.gov (United States)

    Choi, Wookjin; Inoue, Junichi; Tsutsui, Yusuke; Sakurai, Tsuneaki; Seki, Shu

    2017-11-01

    A unique concerted analysis comprising non-contact microwave conductivity measurements and impedance spectroscopy was developed to simultaneously assess the charge carrier mobility and injection barriers. The frequency dependence of the microwave conductivity as well as the electrical current was analyzed by applying sinusoidal voltage to determine the equivalent circuit parameters. Based on the temperature dependence of the circuit parameters, the energy of the injection barrier was estimated to be 0.4 eV with the Richardson-Schottky model, and the band-like transport was confirmed with the negative temperature coefficient with the β value of 1.4 in the intra-layer conduction of C8-BTBT. In contrast, the increase in the resistance of the C8-BTBT layer with decreasing temperature implied the occurrence of hopping-like transport in the inter-layer conduction of C8-BTBT.

  14. Infrared spectroscopic studies on the cluster size dependence of charge carrier structure in nitrous oxide cluster anions

    International Nuclear Information System (INIS)

    Thompson, Michael C.; Weber, J. Mathias

    2016-01-01

    We report infrared photodissociation spectra of nitrous oxide cluster anions of the form (N 2 O) n O − (n = 1–12) and (N 2 O) n − (n = 7–15) in the region 800–1600 cm −1 . The charge carriers in these ions are NNO 2 − and O − for (N 2 O) n O − clusters with a solvation induced core ion switch, and N 2 O − for (N 2 O) n − clusters. The N–N and N–O stretching vibrations of N 2 O − (solvated by N 2 O) are reported for the first time, and they are found at (1595 ± 3) cm −1 and (894 ± 5) cm −1 , respectively. We interpret our infrared spectra by comparison with the existing photoelectron spectroscopy data and with computational data in the framework of density functional theory.

  15. Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jiangshan; Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Changchun 130022 (China)

    2006-05-21

    The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6- (1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq{sub 3}) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient ({gamma}) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

  16. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Energy Technology Data Exchange (ETDEWEB)

    Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, LAPLACE, F-31062 Toulouse (France); Vu, T. T. N. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); Electric Power University, 235 Hoang Quoc Viet, 10000 Hanoi (Viet Nam)

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  17. Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes

    International Nuclear Information System (INIS)

    Barea, Eva M.; Garcia-Belmonte, Germa; Sommer, Michael; Huettner, Sven; Bolink, Henk J.; Thelakkat, Mukundan

    2010-01-01

    Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between ∼ 10 -8 and 10 -6 cm 2 V -1 s -1 are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given.

  18. High Intensity High Charge State ECR Ion Sources

    CERN Document Server

    Leitner, Daniela

    2005-01-01

    The next-generation heavy ion beam accelerators such as the proposed Rare Isotope Accelerator (RIA), the Radioactive Ion Beam Factory at RIKEN, the GSI upgrade project, the LHC-upgrade, and IMP in Lanzhou require a great variety of high charge state ion beams with a magnitude higher beam intensity than currently achievable. High performance Electron Cyclotron Resonance (ECR) ion sources can provide the flexibility since they can routinely produce beams from hydrogen to uranium. Over the last three decades, ECR ion sources have continued improving the available ion beam intensities by increasing the magnetic fields and ECR heating frequencies to enhance the confinement and the plasma density. With advances in superconducting magnet technology, a new generation of high field superconducting sources is now emerging, designed to meet the requirements of these next generation accelerator projects. The talk will briefly review the field of high performance ECR ion sources and the latest developments for high intens...

  19. Charge carrier dynamics investigation of CuInS{sub 2} quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Ke; Sui, Ning; Zhang, Liquan; Wang, Yinghui, E-mail: yinghui-wang@outlook.com; Liu, Qinghui, E-mail: liuqinghui@jlu.edu.cn; Tan, Mingrui [Jilin University, Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics (China); Zhou, Qiang [Jilin University, Key Laboratory of Superhard Materials, College of Physics (China); Zhang, Hanzhuang, E-mail: zhanghz@jlu.edu.cn [Jilin University, Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics (China)

    2016-12-15

    The role of ZnS shell on the photo-physical properties within CuInS{sub 2}/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS{sub 2} and CuInS{sub 2}/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

  20. Energy spectrum of charge carriers in TlIn{sub 1–x}Yb{sub x}Te{sub 2} solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, F. F., E-mail: farzali@physics.ab.az [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Agaeva, U. M.; Zarbaliev, M. M., E-mail: zarbalievmm51@mail.ru [Sumqayit State University (Azerbaijan)

    2016-10-15

    The temperature dependences of the electrical conductivity σ(T), the Hall coefficient R(T), and the thermoelectric coefficient α(T) are investigated in TlIn{sub 1–x}Yb{sub x}Te{sub 2} (0 < x < 0.10) solid solutions at 80–1000K. From the kinetic parameters, the effective masses of electrons and holes are determined. The obtained experimental data on σ(T) and α(T) are interpreted within the context of a model with one and two types of charge carriers. It is established that, since x = 0.05, the TlIn{sub 1–x}Yb{sub x}Te{sub 2} solid solutions belong to the class of narrow-gap semiconductors that have high matrix elements of interaction.

  1. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  2. Plan charge exchange scattering at high energies

    International Nuclear Information System (INIS)

    Saleem, M.; Bhatti, S.; Fazal-e-Aleem; Rafique, M.

    1980-01-01

    By a phenomenological choice of the residue functions, a very good fit with experiment for the pion-nucleon charge exchange reaction at Fermilab energies is obtained on a simple Regge-pole model using a quadratic rho trajectory and energy-independent parameters

  3. Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

    Science.gov (United States)

    Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

    2016-02-01

    Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD.

  4. Interplay Between Side Chain Pattern, Polymer Aggregation, and Charge Carrier Dynamics in PBDTTPD:PCBM Bulk-Heterojunction Solar Cells

    KAUST Repository

    Dyer-Smith, Clare

    2015-05-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene–alt–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors with linear side-chains yield bulk-heterojunction (BHJ) solar cell power conversion efficiencies (PCEs) of about 4% with phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, while a PBDTTPD polymer with a combination of branched and linear substituents yields a doubling of the PCE to 8%. Using transient optical spectroscopy it is shown that while the exciton dissociation and ultrafast charge generation steps are not strongly affected by the side chain modifications, the polymer with branched side chains exhibits a decreased rate of nongeminate recombination and a lower fraction of sub-nanosecond geminate recombination. In turn the yield of long-lived charge carriers increases, resulting in a 33% increase in short circuit current (J sc). In parallel, the two polymers show distinct grazing incidence X-ray scattering spectra indicative of the presence of stacks with different orientation patterns in optimized thin-film BHJ devices. Independent of the packing pattern the spectroscopic data also reveals the existence of polymer aggregates in the pristine polymer films as well as in both blends which trap excitons and hinder their dissociation.

  5. Kinetic Monte Carlo Modeling of Charge Carriers in Organic Electronic Devices: Suppression of the Self-Interaction Error

    KAUST Repository

    Li, Haoyuan

    2017-05-18

    Kinetic Monte Carlo (KMC) simulations have emerged as an important tool to help improve the efficiency of organic electronic devices by providing a better understanding of their device physics. In the KMC simulation of an organic device, the reliability of the results depends critically on the accuracy of the chosen charge-transfer rates, which are themselves strongly influenced by the site-energy differences. These site-energy differences include components coming from the electrostatic forces present in the system, which are often evaluated through electric potentials described by the Poisson equation. Here we show that the charge-carrier self-interaction errors that appear when evaluating the site-energy differences can lead to unreliable simulation results. To eliminate these errors, we propose two approaches that are also found to reduce the impact of finite-size effects. As a consequence, reliable results can be obtained at reduced computational costs. The proposed methodologies can be extended to other device simulation techniques as well.

  6. Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes

    Energy Technology Data Exchange (ETDEWEB)

    Barea, Eva M. [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, 12071 Castello (Spain); Garcia-Belmonte, Germa, E-mail: garciag@uji.e [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, 12071 Castello (Spain); Sommer, Michael; Huettner, Sven [Applied Functional Polymers, Universitaet Bayreuth, 95440 Bayreuth (Germany); Bolink, Henk J. [Molecular Science Institute-Universitat de Valencia, Poligon La Coma s/n, 46980 Paterna, Valencia (Spain); Thelakkat, Mukundan, E-mail: mukundan.thelakkat@uni-bayreuth.d [Applied Functional Polymers, Universitaet Bayreuth, 95440 Bayreuth (Germany)

    2010-04-02

    Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between {approx} 10{sup -8} and 10{sup -6} cm{sup 2} V{sup -1} s{sup -1} are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given.

  7. Effect of trapping of charge carriers on the resolution of Ge(Li) detectors

    International Nuclear Information System (INIS)

    Venturini, Luzia

    1979-01-01

    In this work a measurement is described of the variation of the resolution of a Ge(Li) detector as a function of the position of irradiation of a collimated gamma-ray beam. Also the variation of the resolution has been measured as a function of the applied detector voltage, using a collimated and a non-collimated gamma-ray beam. The measurement indicate that in the process of charge collection loss of holes predominates and the best resolution is obtained in the middle of the compensated region. It has been verified that, in the case of a collimated gamma beam the detector resolution improves with increasing detector bias up to at least 5100 Volts. For a non-collimated gamma beam, however, the resolution reaches a constant value at about 4400 Volts. The dependence of resolution on the position of irradiation can be accounted for by introducing a local ionization factor different from the usual position independent Fano factor. (author)

  8. Shape-Tunable Charge Carrier Dynamics at the Interfaces between Perovskite Nanocrystals and Molecular Acceptors

    KAUST Repository

    Ahmed, Ghada H.

    2016-09-19

    Hybrid organic/inorganic perovskites have recently emerged as an important class of materials and have exhibited remarkable performance in photovoltaics. To further improve their device efficiency, an insightful understanding of the interfacial charge transfer (CT) process is required. Here, we report the first direct experimental observation of the tremendous effect that the shape of perovskite nanocrystals (NCs) has on interfacial CT in the presence of a molecular acceptor. A dramatic change in CT dynamics at the interfaces of three different NC shapes, spheres, platelets, and cubes, is recorded. Our results clearly demonstrate that the mechanism of CT is significantly affected by the NC shape. More importantly, the results demonstrate that complexation on the NC surface acts as an additional driving force not only to tune the CT dynamics but also to control the reaction mechanism at the interface. This observation opens a new venue for further developing perovskite NCs-based applications.

  9. Shape-Tunable Charge Carrier Dynamics at the Interfaces between Perovskite Nanocrystals and Molecular Acceptors

    KAUST Repository

    Ahmed, Ghada H.; Liu, Jiakai; Parida, Manas R.; Banavoth, Murali; Bose, Riya; AlYami, Noktan; Hedhili, Mohamed N.; Peng, Wei; Pan, Jun; Besong, Tabot M.D.; Bakr, Osman; Mohammed, Omar F.

    2016-01-01

    Hybrid organic/inorganic perovskites have recently emerged as an important class of materials and have exhibited remarkable performance in photovoltaics. To further improve their device efficiency, an insightful understanding of the interfacial charge transfer (CT) process is required. Here, we report the first direct experimental observation of the tremendous effect that the shape of perovskite nanocrystals (NCs) has on interfacial CT in the presence of a molecular acceptor. A dramatic change in CT dynamics at the interfaces of three different NC shapes, spheres, platelets, and cubes, is recorded. Our results clearly demonstrate that the mechanism of CT is significantly affected by the NC shape. More importantly, the results demonstrate that complexation on the NC surface acts as an additional driving force not only to tune the CT dynamics but also to control the reaction mechanism at the interface. This observation opens a new venue for further developing perovskite NCs-based applications.

  10. Space-charge compensation of highly charged ion beam from laser ion source

    International Nuclear Information System (INIS)

    Kondrashev, S.A.; Collier, J.; Sherwood, T.R.

    1996-01-01

    The problem of matching an ion beam delivered by a high-intensity ion source with an accelerator is considered. The experimental results of highly charged ion beam transport with space-charge compensation by electrons are presented. A tungsten thermionic cathode is used as a source of electrons for beam compensation. An increase of ion beam current density by a factor of 25 is obtained as a result of space-charge compensation at a distance of 3 m from the extraction system. The process of ion beam space-charge compensation, requirements for a source of electrons, and the influence of recombination losses in a space-charge-compensated ion beam are discussed. (author)

  11. High school Tay-Sachs disease carrier screening: 5 to 11-year follow-up.

    Science.gov (United States)

    Curd, Helen; Lewis, Sharon; Macciocca, Ivan; Sahhar, Margaret; Petrou, Vicki; Bankier, Agnes; Lieberman, Sari; Levy-Lahad, Ephrat; Delatycki, Martin B

    2014-04-01

    The Melbourne high school Tay-Sachs disease (TSD) carrier screening program began in 1997. The aim of this study was to assess the outcomes of this screening program among those who had testing more than 5 years ago, to evaluate the long-term impact of screening. A questionnaire was used for data collection and consisted of validated scales and purposively designed questions. Questionnaires were sent to all carriers and two non-carriers for each carrier who were screened in the program between 1999 and 2005. Twenty-four out of 69 (34.8 %) carriers and 30/138 (21.7 %) non-carriers completed the questionnaire. Most participants (82 %) retained good knowledge of TSD and there was no evidence of a difference in knowledge between carriers and non-carriers. Most participants (83 %) were happy with the timing and setting of screening and thought that education and screening for TSD should be offered during high school. There was no difference between carriers and non-carriers in mean scores for the State Trait Anxiety Inventory and Decision Regret Scale. This evaluation indicated that 5-11 years post high school screening, those who were screened are supportive of the program and that negative consequences are rare.

  12. Terahertz Conductivity within Colloidal CsPbBr3 Perovskite Nanocrystals: Remarkably High Carrier Mobilities and Large Diffusion Lengths.

    Science.gov (United States)

    Yettapu, Gurivi Reddy; Talukdar, Debnath; Sarkar, Sohini; Swarnkar, Abhishek; Nag, Angshuman; Ghosh, Prasenjit; Mandal, Pankaj

    2016-08-10

    Colloidal CsPbBr3 perovskite nanocrystals (NCs) have emerged as an excellent light emitting material in last one year. Using time domain and time-resolved THz spectroscopy and density functional theory based calculations, we establish 3-fold free carrier recombination mechanism, namely, nonradiative Auger, bimolecular electron-hole recombination, and inefficient trap-assisted recombination in 11 nm sized colloidal CsPbBr3 NCs. Our results confirm a negligible influence of surface defects in trapping charge carriers, which in turn results into desirable intrinsic transport properties, from the perspective of device applications, such as remarkably high carrier mobility (∼4500 cm(2) V(-1) s(-1)), large diffusion length (>9.2 μm), and high luminescence quantum yield (80%). Despite being solution processed and possessing a large surface to volume ratio, this combination of high carrier mobility and diffusion length, along with nearly ideal photoluminescence quantum yield, is unique compared to any other colloidal quantum dot system.

  13. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components; Ladungstraegertransport in epitaktischen Strontiumtitanat-Schichten fuer den Einsatz in supraleitenden Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Veit

    2011-02-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively {sigma}(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10{sup 7}..10{sup 8} V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  14. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan; Bertoluzzi, Luca; Gonzalez-Pedro, Victoria; Gimenez, Sixto; Fabregat-Santiago, Francisco; Kemp, Kyle W.; Sargent, Edward H.; Bisquert, Juan

    2013-01-01

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  15. Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory

    International Nuclear Information System (INIS)

    Zhao Junhui; Thomson, Douglas J; Freund, Michael S; Pilapil, Matt; Pillai, Rajesh G; Aminur Rahman, G M

    2010-01-01

    Dynamic resistive memory devices based on a conjugated polymer composite (PPy 0 DBS - Li + (PPy: polypyrrole; DBS - : dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

  16. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan

    2013-08-12

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  17. Improved film morphology reduces charge carrier recombination into the triplet excited state in a small bandgap polymer-fullerene photovoltaic cell

    NARCIS (Netherlands)

    Di Nuzzo, D.; Aguirre de Miguel, A.; Shahid, M.; Gevaerts, Veronique; Meskers, S.C.J.; Janssen, R.A.J.

    2010-01-01

    The use of diiodooctane as processing additive for construction of PCPDTBT:PCBM solar cells results in a profound change in photophysical behavior of this blend. In the improved morphology obtained with the additive, recombination of charge carriers to the lowest triplet excited state is suppressed.

  18. Insights into the charge carrier terahertz mobility in polyfluorenes from large-scale atomistic simulations and time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Vukmirović, N.; Ponseca, C.S.; Němec, Hynek; Yartsev, A.; Sundström, V.

    2012-01-01

    Roč. 116, č. 37 (2012), s. 19665-1972 ISSN 1932-7447 Institutional research plan: CEZ:AV0Z10100520 Keywords : charge carrier mobility * time-resolved terahertz spectroscopy * multiscale atomistic calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.814, year: 2012

  19. Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

    Directory of Open Access Journals (Sweden)

    I. Khanonkin

    2017-03-01

    Full Text Available The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the continuous wave probe shows interesting dynamical processes during the initial 2-3 ps after the pump pulse, when carriers originating from two photon absorption contribute the least to the recovery. The effects of optical excitations and electrical bias levels on the recovery dynamics of the gain in energetically different QDs are quantified and discussed. The experimental observations are validated qualitatively using a comprehensive finite-difference time-domain model by recording the time evolution of the charge carriers in the QDs ensemble following the pulse.

  20. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires

    Science.gov (United States)

    Kaveh Baghbadorani, Masoud

    In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in 150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and time resolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium-silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs core shell NWs of 130 nm diameter. Plasmonic NWs with Au

  1. Concept for high-charge-state ion induction accelerators

    International Nuclear Information System (INIS)

    Logan, B.G.; Perry, M.D.; Caporaso, G.J.

    1996-01-01

    This work describes a particular concept for ion induction linac accelerators using high-charge-state ions produced by an intense, short pulse laser, and compares the costs of a modular driver system producing 6.5 MJ for a variety of ion masses and charge states using a simple but consistent cost model

  2. The effect of charge carrier and doping site on thermoelectric properties of Mg2Sn0.75Ge0.25

    International Nuclear Information System (INIS)

    Saparamadu, Udara; Mao, Jun; Dahal, Keshab; Zhang, Hao; Tian, Fei; Song, Shaowei; Liu, Weishu; Ren, Zhifeng

    2017-01-01

    Mg 2 Sn 0.75 Ge 0.25 has been recently demonstrated to be a promising thermoelectric material for power generation in the temperature range from room temperature to 723 K because of the high power factor of ∼54 μW cm −1  K −2 upon Sb doping to the Sn site. The enhanced density of states effective mass and weak electron scattering from the alloying effect are believed to be the main reasons for the high power factor (PF) and hence high figure of merit (ZT). In this study, it is shown that the right choice of carrier donor also plays an important role in obtaining high power factor. The effect of carrier donors Y and La at Mg-site and Bi and P at Sn-site in Mg 2 Sn 0.75 Ge 0.25 is systematically investigated. It is found that charge donors at the Sn-site are much more effective than at the Mg-site in enhancing PF and ZT. Bi doped Mg 2 Sn 0.73 Bi 0.02 Ge 0.25 shows a peak ZT of ∼1.4 at 673 K, a peak PF of ∼54 μW cm −1  K −2 at 577 K, which resulted in an engineering figure of merit (ZT) eng of ∼0.76 and (PF) eng of ∼2.05 W m −1  K −1 for cold side fixed at 323 K and hot side at 723 K.

  3. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Science.gov (United States)

    Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2014-08-01

    The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  4. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  5. Charged dust in planetary magnetospheres: Hamiltonian dynamics and numerical simulations for highly charged grains

    Science.gov (United States)

    Schaffer, L.; Burns, J. A.

    1994-01-01

    We use a combination of analytical and numerical methods to investigate the dynamics of charged dust grains in planetary magnetospheres. Our emphasis is on obtaining results valid for particles that are not necessarily dominated either by gravitational or electromagnetic forces. A Hamiltonian formulation of the problem yields exact results, for all values of charge-to-mass ratio, when we introduce two constraints: particles remain in the equatorial plane and the magnetic field is taken as axially symmetric. In particular, we obtain locations of equilibrium points, the frequencies of stable periodic orbits, the topology of separatrices in phase space, and the rate of longitudinal drift. These results are significant for specific applications: motion in the nearly aligned dipolar field of Saturn, and the trajectories of arbitrarily charged particles in complex magnetic fields for limited periods of time after ejection from parent bodies. Since the model is restrictive, we also use numerical integrations of the full three-dimensional equations of motion and illustrate under what conditions the constrained problem yields reasonable results. We show that a large fraction of the intermediately charged and highly charged (gyrating) particles will always be lost to a planet's atmosphere within a few hundred hours, for motion through tilted-dipole magnetic fields. We find that grains must have a very high charge-to-mass ratio in order to be mirrored back to the ring plane. Thus, except perhaps at Saturn where the dipole tilt is very small, the likely inhabitants of the dusty ring systems are those particles that are either nearly Keplerian (weakly charged) grains or grains whose charges place them in the lower end of the intermediate charge zone. Fianlly, we demonstrate the effect of plasma drag on the orbits of gyrating particles to be a rapid decrease in gyroradius followed by a slow radial evolution of the guiding center.

  6. Highly efficient tandem organic light-emitting devices employing an easily fabricated charge generation unit

    Science.gov (United States)

    Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa

    2018-02-01

    We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.

  7. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.; Novikov, A. V.; Yurasov, D. V.; Shaleev, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-12-15

    For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15} layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.

  8. On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.

  9. A high charge state heavy ion beam source for HIF

    International Nuclear Information System (INIS)

    Eylon, S.; Henestroza, E.

    1995-04-01

    A high current low emittance high charge state heavy ion beam source is being developed. This is designed to deliver HIF (heavy ion fusion) driver accelerator scale beam. Using high-charge-state beam in a driver accelerator for HIF may increase the acceleration efficiency, leading to a reduction in the driver accelerator size and cost. The proposed source system which consists of the gas beam electron stripper followed by a high charge state beam separator, can be added to existing single charge state, low emittance, high brightness ion sources and injectors. We shall report on the source physics design using 2D beam envelope simulations and experimental feasibility studies' results using a neutral gas stripper and a beam separator at the exit of the LBL 2 MV injector

  10. Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

    International Nuclear Information System (INIS)

    Zaitsev, S. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

    2008-01-01

    In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity

  11. Effects of High Temperature and Thermal Cycling on the Performance of Perovskite Solar Cells: Acceleration of Charge Recombination and Deterioration of Charge Extraction

    KAUST Repository

    Sheikh, Arif D.

    2017-09-18

    In this work, we investigated the effects of high operating temperature and thermal cycling on the photovoltaic performance of perovskite solar cells (PSCs) with a typical mesostructured (m)-TiO2-CH3NH3PbI3-xClx-spiro-OMeTAD architecture. After carrying out temperature-dependent grazing incidence wide-angle X-ray scattering (GIWAXS), in-situ X-ray diffraction (XRD) and optical absorption experiments, thermal durability of PSCs was tested by subjecting the devices to repetitive heating to 70 °C and cooling to room temperature (20 °C). An unexpected regenerative effect was observed after the first thermal cycle; the average power conversion efficiency (PCE) increased by approximately 10 % in reference to the as-prepared device. This increase of PCE was attributed to the heating-induced improvement of crystallinity and p-doping in the hole-transporter, Spiro-OMeTAD, which promotes the efficient extraction of photo-generated carriers. However, further thermal cycles produced a detrimental effect on the photovoltaic performance of PSCs with short-circuit current and fill factor degrading faster than the open-circuit voltage. Similarly, the photovoltaic performance of PSCs degraded at high operation temperatures; both short-circuit current and open-circuit voltage decreased with increasing temperature, but the temperature-dependent trend of fill factor was opposite. Our impedance spectroscopy analysis revealed a monotonous increase of charge transfer resistance and a concurrent decrease of charge recombination resistance with increasing temperature, indicating high recombination of charge carriers. Our results revealed that both thermal cycling and high temperatures produce irreversible detrimental effects on the PSC performance due to the deteriorated interfacial photo-carrier extraction. The present findings suggest that development of robust charge transporters and proper interface engineering are critical for the deployment of perovskite photovoltaics in harsh

  12. Charge ordering phenomena in high temperature superconductors

    International Nuclear Information System (INIS)

    Tassini, Leonardo; Prestel, Wolfgang; Hackl, Rudi; Erb, Andreas; Lambacher, Michael

    2007-01-01

    The electronic Raman effect has been studied in single crystals of Y 1-x Ca x Ba 2 Cu 3 O 6 (Y-123) and La 2-x Sr x CuO 4 (LSCO) at different doping. The experimental results provide evidences of an anomalous contribution to the response at low energies and temperatures. In LSCO the additional excitation is in B 2g symmetry for x = 0.02 and in B 1g symmetry for x = 0.10. In Y-123, we observed the additional feature in B 2g symmetry at 1.5% doping. Mainly on the basis of the selection rules we conclude that the additional peaks are the response of a dynamical charge modulation (stripes) in the two-dimensional CuO 2 planes. The selection rules allow us to determine the orientation of the stripes to be along the diagonal of the CuO 2 planes in Y-123 and LSCO at x = 0.02, and along the principal axes in LSCO at x = 0.10

  13. Efficient charge-carrier extraction from Ag₂S quantum dots prepared by the SILAR method for utilization of multiple exciton generation.

    Science.gov (United States)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J

    2015-01-28

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.

  14. Novel charge sensitive preamplifier without high-value feedback resistor

    International Nuclear Information System (INIS)

    Xi Deming

    1992-01-01

    A novel charge sensitive preamplifier is introduced. The method of removing the high value feedback resistor, the circuit design and analysis are described. A practical circuit and its measured performances are provided

  15. Improvement of highly charged ion output from an ECR source

    International Nuclear Information System (INIS)

    Shirkov, G.D.

    1995-01-01

    The physical limitations of the highly charged ion production in the ECR source is analyzed in this report. General methods to increase the output ion current and the attainable charged states of heavy ions are discussed. Some new ways to improve the output of highly charged ions from the ECR source for heavy ions are proposed. A new library of computer codes for the mathematical simulation of heavy ion production in the ECR ion source is used for numerical experiments to test these ways for improving the operation of the ECR source. (orig.)

  16. Intrinsic Local Distortions and charge carrier behavior in CMR manganites and cobaltites

    Science.gov (United States)

    Bridges, Frank

    2010-03-01

    We compare and contrast the local structure and electronic configurations in two oxide systems La1-xSrxCoO3 (LSCO) and La1-yCayMnO3 (LCMO). Although these oxides may appear quite similar they have rather different properties. At x=0, LaCoO3 (LCO) has unusual magnetic properties - diamagnetic at low T but developing a moment near 100K. The Sr doped LSCO materials show ferromagnetism for x > 0.2. For LCO, one of the possible spin state configurations called the intermediate spin (IS) state (S=1), should be Jahn-Teller (JT) active, while the low spin (S=0) and high spin (S=2) states have no JT distortion. Early local structure measurements suggested a JT distortion was present in LCO and therefore supported an IS spin model. However we find no evidence for any significant JT distortion (and hence no support for the IS model) for a range of bulk and nanoparticle cobaltites La1-xSrxCoO3, x = 0 - 0.35. In contrast there are large JT distortions in the manganites LCMO, 0.2 K-edge XANES data that shown no significant shift of the edge for the cobaltites as the Sr concentration increases from x =0 to 0.35 indicating essentially no change in the electronic configuration about Co; consequently, the holes introduced via Sr doping appear to go primarily into the O bands. In contrast there is a large shift of the Mn K-edge with Ca doping indicating a change in the average Mn valence, and a corresponding change in the Mn electronic configuration. We briefly discuss some possible models.

  17. Charge dynamics in graphene and graphene superlattices under a high-frequency electric field: a semiclassical approach

    International Nuclear Information System (INIS)

    Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V

    2013-01-01

    The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)

  18. Localized vs. delocalized character of charge carriers in LaAlO3/SrTiO3 heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Kejin; Schlappa, Justine; Strocov, Vladimir; Frison, Ruggero; Patthey, Luc; Schmitt, Thorsten [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Radovic, Milan [Laboratory for Synchrotron and Neutron Spectroscopy, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Mesot, Joel [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Laboratory for Synchrotron and Neutron Spectroscopy, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland)

    2011-07-01

    Oxide heterostructures have been attracting great attention due to extraordinary phenomena occurring at the interface and their potential application for device design. A particularly fascinating system is the two-dimensional conductive interface between the band insulators LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO), which can be even driven to magnetic and superconducting phases at low temperatures. Resonant inelastic X-ray scattering at Ti L-edges is particularly suitable to address the electronic structure of its interface since the Ti{sup 3+} states clearly display strong dd excitations while Ti{sup 4+} states exhibit only elastic emission in the low energy loss regime. Our studies on LAO/STO superlattices prepared by pulsed laser deposition unambiguously reveal the presence of both localized and delocalized Ti 3d carriers generated during the building of the LAO/STO interfaces. Systematic studies on samples before and after annealing under O{sub 2} atmosphere and high temperature show that the dual character carriers can be either induced by electron transfer due to the polar-discontinuity or by oxygen vacancies defects. Oxygen vacancies and electronic reconstruction are equivalent in balancing the built-up electric potential.

  19. Probing the vacuum with highly charged ions

    International Nuclear Information System (INIS)

    Bottcher, C.; Strayer, M.R.

    1987-01-01

    The physics of the Fermion vacuum is briefly described, and applied to pair production in heavy ion collisions. We consider in turn low energies (<50 MeV/nucleon), intermediate energies (<5 GeV/nucleon), and ultrahigh energies such as would be produced in a ring collider. At high energies, interesting questions of Lorentz and gauge invariance arise. Finally, some applications to the structure of high Z atoms are examined. 14 refs., 11 figs

  20. Process techniques of charge transfer time reduction for high speed CMOS image sensors

    International Nuclear Information System (INIS)

    Cao Zhongxiang; Li Quanliang; Han Ye; Qin Qi; Feng Peng; Liu Liyuan; Wu Nanjian

    2014-01-01

    This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode (PPD) and the voltage difference between the PPD and the floating diffusion (FD) node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 × 64 pixels was designed and implemented in the 0.18 μm CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques. (semiconductor devices)

  1. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  2. Atomic physics with highly charged ions

    International Nuclear Information System (INIS)

    Richard, P.

    1991-08-01

    This report discusses: One electron outer shell processes in fast ion-atom collisions; role of electron-electron interaction in two-electron processes; multi-electron processes at low energy; multi-electron processes at high energy; inner shell processes; molecular fragmentation studies; theory; and, JRM laboratory operations

  3. A possibility for generation of two species of charge carriers along main-chain and side-chains for a π-conjugated polymer

    International Nuclear Information System (INIS)

    Kudo, Yuki; Kawabata, Kohsuke; Goto, Hiromasa

    2013-01-01

    Iodide doping produces charge carriers in π-conjugated polymers. Solitons can be generated in the case of polyacetylene, and polarons in the case of aromatic-type conjugated polymers. We synthesized a conjugated main-chain/side-chain polymer, which consists of polyene in the main-chain and aromatic-type conjugated units in the side-chains. Based on the SSH (Su, Schrieffer, Heeger) theoretical model of solitons in one-dimensional conjugated polymers, we experimentally carried out chemical doping to the main-chain/side-chains conjugated polymer. Generation of the charge carriers was examined by electron spin resonance spectroscopy. This study may lead to realization of a dual doping system of solitons and polarons in π-conjugation expanded to two-dimensional directions in polymers.

  4. Atomic structure of highly-charged ions. Final report

    International Nuclear Information System (INIS)

    Livingston, A. Eugene

    2002-01-01

    Atomic properties of multiply charged ions have been investigated using excitation of energetic heavy ion beams. Spectroscopy of excited atomic transitions has been applied from the visible to the extreme ultraviolet wavelength regions to provide accurate atomic structure and transition rate data in selected highly ionized atoms. High-resolution position-sensitive photon detection has been introduced for measurements in the ultraviolet region. The detailed structures of Rydberg states in highly charged beryllium-like ions have been measured as a test of long-range electron-ion interactions. The measurements are supported by multiconfiguration Dirac-Fock calculations and by many-body perturbation theory. The high-angular-momentum Rydberg transitions may be used to establish reference wavelengths and improve the accuracy of ionization energies in highly charged systems. Precision wavelength measurements in highly charged few-electron ions have been performed to test the most accurate relativistic atomic structure calculations for prominent low-lying excited states. Lifetime measurements for allowed and forbidden transitions in highly charged few-electron ions have been made to test theoretical transition matrix elements for simple atomic systems. Precision lifetime measurements in laser-excited alkali atoms have been initiated to establish the accuracy of relativistic atomic many-body theory in many-electron systems

  5. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    Science.gov (United States)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  6. Charge collection and charge pulse formation in highly irradiated silicon planar detectors

    International Nuclear Information System (INIS)

    Dezillie, B.; Li, Z.; Eremin, V.

    1998-06-01

    The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V fd ), the kinetics of the charge collection (Q) contains a fast and a slow component. At V = V fd *, which is the full depletion voltage traditionally determined by the extrapolation of the fast component amplitude of q versus bias to the maximum value or from the standard C-V measurements, the pulse has a slow component with significant amplitude. This slow component can only be eliminated by applying additional bias that amounts to the real full depletion voltage (V fd ) or more. The above mentioned regularities are explained in this paper in terms of a model of an irradiated detector with multiple regions. This model allows one to use C-V, in a modified way, as well as TChT (transient charge technique) measurements to determine the V fd for highly irradiated detectors

  7. Ionization of water clusters by fast Highly Charged Ions: Stability, fragmentation, energetics and charge mobility

    International Nuclear Information System (INIS)

    Legendre, S; Maisonny, R; Capron, M; Bernigaud, V; Cassimi, A; Gervais, B; Grandin, J-P; Huber, B A; Manil, B; Rousseau, P; Tarisien, M; Adoui, L; Lopez-Tarifa, P; AlcamI, M; MartIn, F; Politis, M-F; Penhoat, M A Herve du; Vuilleumier, R; Gaigeot, M-P; Tavernelli, I

    2009-01-01

    We study dissociative ionization of water clusters by impact of fast Ni ions. Cold Target Recoil Ion Momentum Spectroscopy (COLTRIMS) is used to obtain information about stability, energetics and charge mobility of the ionized clusters. An unusual stability of the (H 2 O) 4 H ''+ ion is observed, which could be the signature of the so called ''Eigen'' structure in gas phase water clusters. High charge mobility, responsible for the formation of protonated water clusters that dominate the mass spectrum, is evidenced. These results are supported by CPMD and TDDFT simulations, which also reveal the mechanisms of such mobility.

  8. Strong charge state dependence of H+ and H2+ sputtering induced by slow highly charged ions

    International Nuclear Information System (INIS)

    Kakutani, N.; Azuma, T.; Yamazaki, Y.; Komaki, K.; Kuroki, K.

    1995-01-01

    Secondary ion emission has been studied for very slow ( similar 0.01ν B ) highly charged Ar and N ions bombarding C 60 containing hydrogen as an impurity. It is found that the fragmentations of C 60 are very rare even for Ar 16+ bombardments. On the other hand, the sputtering of H + and H 2 + has been observed to increase drastically as a function of incident charge q like q γ (e.g., γ similar 4.6 for H + sputtering by 500 eV Ar q+ ). (orig.)

  9. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Yokoyama, Masaaki [Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  10. Efficient charge carriers induced by extra outer-shell electrons in iron-pnictides: a comparison between Ni- and Co-doped CaFeAsF

    International Nuclear Information System (INIS)

    Zhang Min; Yu Yi; Tan Shun; Zhang Yuheng; Zhang Changjin; Zhang Lei; Qu Zhe; Ling Langsheng; Xi, Chuanying

    2010-01-01

    A comprehensive study of the difference between CaFe 1-x Ni x AsF and CaFe 1-x Co x AsF systems has been carried out by measuring the efficient charge carrier concentration, the valence states and the superconducting phase diagram. It is found that at the same doping level, Ni doping introduces nearly twice the number of charge carriers as Co doping. However, x-ray absorption near-edge spectroscopy measurements reveal that the valence state of Fe in both systems is close to 2, indicating that there is no valence mismatch. We suggest that the charge carriers in CaFe 1-x M x AsF (M=transition metal elements) are not induced by valence mismatch but come from the difference in the number of outer-shell electrons. We also suggest that with Ni and Co doping, the systems change from a multi-band material in the underdoped regions to a single-band state in the overdoped regions.

  11. Resonance charge exchange mechanism at high and moderate energies

    International Nuclear Information System (INIS)

    Bogdanov, A.V.; Gevorkyan, A.S.

    1984-01-01

    Charge exchange mechanisms at high and medium energies are investigated, ta king the resonance charge exchange of a proton by an hydrogen atom as an example . It is established that there are two classical charge exchange mechanisms rel ated to direct proton knockout from the bound state and one quantum-mechanical mechanism corresponding to the electron tunnelling from one bound state to anoth er. The classical cross-section diverges for two of these mechanisms, and the quasiclassical scattering amplitude must be calculated on the base of a complex classical trajectory. Physical grounds for the choice of such trajectories are discussed and calculations of the Van Vleck determinant for these mechanisms a re presented. Contributions from different mechanisms to the total charge excha nge cross-section are analyzed. A comparison with experimental data and results of other authors is made

  12. Charged particle beam scanning using deformed high gradient insulator

    Science.gov (United States)

    Chen, Yu -Jiuan

    2015-10-06

    Devices and methods are provided to allow rapid deflection of a charged particle beam. The disclosed devices can, for example, be used as part of a hadron therapy system to allow scanning of a target area within a patient's body. The disclosed charged particle beam deflectors include a dielectric wall accelerator (DWA) with a hollow center and a dielectric wall that is substantially parallel to a z-axis that runs through the hollow center. The dielectric wall includes one or more deformed high gradient insulators (HGIs) that are configured to produce an electric field with an component in a direction perpendicular to the z-axis. A control component is also provided to establish the electric field component in the direction perpendicular to the z-axis and to control deflection of a charged particle beam in the direction perpendicular to the z-axis as the charged particle beam travels through the hollow center of the DWA.

  13. Multistage charged particle accelerator, with high-vacuum insulation

    International Nuclear Information System (INIS)

    Holl, P.

    1976-01-01

    A multistage charged-particle accelerator for operating with accelerating voltages higher than 150 kV is described. The device consists essentially of a high-voltage insulator, a source for producing charged particles, a Wehnelt cylinder, an anode, and a post-accelerating tube containing stack-wise positioned post-accelerating electrodes. A high vacuum is used for insulating the parts carrying the high voltages, and at least one cylindrical screen surrounding these parts is interposed between them and the vacuum vessel, which can itself also function as a cylindrical screen

  14. Charge fluctuations in high-electron-mobility transistors: a review

    International Nuclear Information System (INIS)

    Green, F.

    1993-01-01

    The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

  15. The impact of Au doping on the charge carrier dynamics at the interfaces between cationic porphyrin and silver nanoclusters

    KAUST Repository

    Almansaf, Abdulkhaleq A.

    2017-02-04

    We explore the impact of Au doping on the charge transfer dynamics between the positively charged porphyrin (TMPyP) and negatively charged silver nanoclusters (Ag29 NCs). Our transient absorption (TA) spectroscopic results demonstrate that the interfacial charge transfer, the intersystem crossing and the triplet state lifetime of porphyrin can be tuned by the doping of Au atoms in Ag29 NCs. Additionally, we found that the electrostatic interaction between the negative charge of the cluster and the positive charge on the TMPyP is the driving force that brings them close to each other for complex formation and subsequently facilitates the transfer process.

  16. The impact of Au doping on the charge carrier dynamics at the interfaces between cationic porphyrin and silver nanoclusters

    KAUST Repository

    Almansaf, Abdulkhaleq A.; Parida, Manas R.; Besong, Tabot M.D.; Maity, Partha; Bootharaju, Megalamane Siddaramappa; Bakr, Osman; Mohammed, Omar F.

    2017-01-01

    We explore the impact of Au doping on the charge transfer dynamics between the positively charged porphyrin (TMPyP) and negatively charged silver nanoclusters (Ag29 NCs). Our transient absorption (TA) spectroscopic results demonstrate that the interfacial charge transfer, the intersystem crossing and the triplet state lifetime of porphyrin can be tuned by the doping of Au atoms in Ag29 NCs. Additionally, we found that the electrostatic interaction between the negative charge of the cluster and the positive charge on the TMPyP is the driving force that brings them close to each other for complex formation and subsequently facilitates the transfer process.

  17. Structure, High Affinity, and Negative Cooperativity of the Escherichia coli Holo-(Acyl Carrier Protein):Holo-(Acyl Carrier Protein) Synthase Complex

    Energy Technology Data Exchange (ETDEWEB)

    Marcella, Aaron M.; Culbertson, Sannie J.; Shogren-Knaak, Michael A.; Barb, Adam W.

    2017-11-01

    The Escherichia coli holo-(acyl carrier protein) synthase (ACPS) catalyzes the coenzyme A-dependent activation of apo-ACPP to generate holo-(acyl carrier protein) (holo-ACPP) in an early step of fatty acid biosynthesis. E. coli ACPS is sufficiently different from the human fatty acid synthase to justify the development of novel ACPS-targeting antibiotics. Models of E. coli ACPS in unliganded and holo-ACPP-bound forms solved by X-ray crystallography to 2.05 and 4.10 Å, respectively, revealed that ACPS bound three product holo-ACPP molecules to form a 3:3 hexamer. Solution NMR spectroscopy experiments validated the ACPS binding interface on holo-ACPP using chemical shift perturbations and by determining the relative orientation of holo-ACPP to ACPS by fitting residual dipolar couplings. The binding interface is organized to arrange contacts between positively charged ACPS residues and the holo-ACPP phosphopantetheine moiety, indicating product contains more stabilizing interactions than expected in the enzyme:substrate complex. Indeed, holo-ACPP bound the enzyme with greater affinity than the substrate, apo-ACPP, and with negative cooperativity. The first equivalent of holo-ACPP bound with a KD = 62 ± 13 nM, followed by the binding of two more equivalents of holo-ACPP with KD = 1.2 ± 0.2 μM. Cooperativity was not observed for apo-ACPP which bound with KD = 2.4 ± 0.1 μM. Strong product binding and high levels of holo-ACPP in the cell identify a potential regulatory role of ACPS in fatty acid biosynthesis.

  18. Structure, High Affinity, and Negative Cooperativity of the Escherichia coli Holo-(Acyl Carrier Protein):Holo-(Acyl Carrier Protein) Synthase Complex.

    Science.gov (United States)

    Marcella, Aaron M; Culbertson, Sannie J; Shogren-Knaak, Michael A; Barb, Adam W

    2017-11-24

    The Escherichia coli holo-(acyl carrier protein) synthase (ACPS) catalyzes the coenzyme A-dependent activation of apo-ACPP to generate holo-(acyl carrier protein) (holo-ACPP) in an early step of fatty acid biosynthesis. E. coli ACPS is sufficiently different from the human fatty acid synthase to justify the development of novel ACPS-targeting antibiotics. Models of E. coli ACPS in unliganded and holo-ACPP-bound forms solved by X-ray crystallography to 2.05and 4.10Å, respectively, revealed that ACPS bound three product holo-ACPP molecules to form a 3:3 hexamer. Solution NMR spectroscopy experiments validated the ACPS binding interface on holo-ACPP using chemical shift perturbations and by determining the relative orientation of holo-ACPP to ACPS by fitting residual dipolar couplings. The binding interface is organized to arrange contacts between positively charged ACPS residues and the holo-ACPP phosphopantetheine moiety, indicating product contains more stabilizing interactions than expected in the enzyme:substrate complex. Indeed, holo-ACPP bound the enzyme with greater affinity than the substrate, apo-ACPP, and with negative cooperativity. The first equivalent of holo-ACPP bound with a K D =62±13nM, followed by the binding of two more equivalents of holo-ACPP with K D =1.2±0.2μM. Cooperativity was not observed for apo-ACPP which bound with K D =2.4±0.1μM. Strong product binding and high levels of holo-ACPP in the cell identify a potential regulatory role of ACPS in fatty acid biosynthesis. Copyright © 2017 Elsevier Ltd. All rights reserved.

  19. Highly charged atomic physics at HIRFL-CSR

    International Nuclear Information System (INIS)

    Ma Xinwen; Wang Youde; Hou Mingdong; Jin Gengmin

    1996-01-01

    HIRFL-CSR is a proposed electron cooling storage ring optimized to accelerate and store beams of highly charged heavy ions. Several possibilities for advanced atomic physics studies are discussed, such as studies of electron-ion, ion-atoms, photon-ion-electron interactions and high resolution spectroscopy

  20. Design of suitable carrier buffer for free-flow zone electrophoresis by charge-to-mass ratio and band broadening analysis.

    Science.gov (United States)

    Kong, Fan-Zhi; Yang, Ying; He, Yu-Chen; Zhang, Qiang; Li, Guo-Qing; Fan, Liu-Yin; Xiao, Hua; Li, Shan; Cao, Cheng-Xi

    2016-09-01

    In this work, charge-to-mass ratio (C/M) and band broadening analyses were combined to provide better guidance for the design of free-flow zone electrophoresis carrier buffer (CB). First, the C/M analyses of hemoglobin and C-phycocyanin (C-PC) under different pH were performed by CLC Protein Workbench software. Second, band dispersion due to the initial bandwidth, diffusion, and hydrodynamic broadening were discussed, respectively. Based on the analyses of the C/M and band broadening, a better guidance for preparation of free-flow zone electrophoresis CB was obtained. Series of experiments were performed to validate the proposed method. The experimental data showed high accordance with our prediction allowing the CB to be prepared easily with our proposed method. To further evaluate this method, C-PC was purified from crude extracts of Spirulina platensis with the selected separation condition. Results showed that C-PC was well separated from other phycobiliproteins that have similar physicochemical properties, and analytical grade product with purity up to 4.5 (A620/A280) was obtained. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Highly charged ions: a miniature laboratory for new fundamental science

    International Nuclear Information System (INIS)

    Gillaspy, J.D.

    2002-01-01

    Full text: Highly charged ions are 10-100 times smaller than ordinary atoms, yet they present within themselves a remarkably rich arena for testing fundamental aspects of physics. These tests are based on a precise analysis of the energy distribution of the photons that are emitted as electrons hop between energy levels within the highly charged ions. With sufficiently precise analysis, it may be possible to obtain new information about the structure of the vacuum, the effect of special relativity on many-body correlation, physics beyond the Standard Model, and the fundamental nature of quantum measurements. This talk will review the current state-of-the-art in the spectroscopy of highly charged ions, and give a look towards the future

  2. Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States)

    2015-05-14

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  3. High Charge Mobility of a Perylene Bisimide Dye with Hydrogen-bond Formation Group

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    A perylene bisimide dye covalently bonded with a hydrogen-bond formation group of 1,3, 5-triazine-2, 4-diamine has been synthesized. Its casting films show a charge carrier mobility over 10-3 cm2/Vs, which is in the range of the highest values found for other promising charge transport materials suitable for solution processable technique.

  4. Mobility of charge carriers in electron-irradiated crystals of n-type Hg0.8Cd0.2Te

    International Nuclear Information System (INIS)

    Voitsekhovskii, A.V.; Kiryushkin, E.M.; Kokhanenko, A.P.; Kurbanov, K.R.; Lilenko, Yu.V.

    1988-01-01

    We present the results of an investigation of the behavior of the mobility of the charge carriers in Hg 1-x Cd x Te crystals with n-type conduction as a function of the dose of irradiation by electrons with an energy of 3.0 MeV at 300 K and the initial content of defects in the material. The complex character of the variation of the mobility of the electrons as a function of the dose observed when crystals of n-Hg 1-x Cd x Te (x ∼ 0.20) with different initial concentrations of defects are irradiated by fast electrons has been attributed to the influence of the factors of the shielding of the ionized scattering centers by electrons and the additional scattering of the charge carriers on the radiation defects. Good agreement between the experimental and calculated plots of the dependence of the mobility of electrons on the irradiation dose has been obtained with consideration of a model of the simultaneous introduction of donor (single charged) and acceptor (doubly charged) defects into a narrow-band semiconductor characterized by a degenerate and nonparabolic conduction band

  5. Charged-particle mutagenesis 2. Mutagenic effects of high energy charged particles in normal human fibroblasts

    Science.gov (United States)

    Chen, D. J.; Tsuboi, K.; Nguyen, T.; Yang, T. C.

    1994-01-01

    The biological effects of high Linear Energy Transfer (LET) charged particles are a subject of great concern with regard to the prediction of radiation risk in space. In this report, mutagenic effects of high LET charged particles are quantitatively measured using primary cultures of human skin fibroblasts, and the spectrum of induced mutations are analyzed. The LET of the charged particles ranged from 25 KeV/micrometer to 975 KeV/micrometer with particle energy (on the cells) between 94-603 MeV/u. The X-chromosome linked hypoxanthine guanine phosphoribosyl transferase (hprt) locus was used as the target gene. Exposure to these high LET charged particles resulted in exponential survival curves; whereas, mutation induction was fitted by a linear model. The Relative Biological Effect (RBE) for cell-killing ranged from 3.73 to 1.25, while that for mutant induction ranged from 5.74 to 0.48. Maximum RBE values were obtained at the LET of 150 keV/micrometer. The inactivation cross-section (alpha i) and the action cross-section for mutant induction (alpha m) ranged from 2.2 to 92.0 sq micrometer and 0.09 to 5.56 x 10(exp -3) sq micrometer respectively. The maximum values were obtained by Fe-56 with an LET of 200 keV/micrometer. The mutagenicity (alpha m/alpha i) ranged from 2.05 to 7.99 x 10(exp -5) with the maximum value at 150 keV/micrometer. Furthermore, molecular analysis of mutants induced by charged particles indicates that higher LET beams are more likely to cause larger deletions in the hprt locus.

  6. Charged-particle mutagenesis II. Mutagenic effects of high energy charged particles in normal human fibroblasts

    Science.gov (United States)

    Chen, D. J.; Tsuboi, K.; Nguyen, T.; Yang, T. C.

    1994-01-01

    The biological effects of high LET charged particles are a subject of great concern with regard to the prediction of radiation risk in space. In this report, mutagenic effects of high LET charged particles are quantitatively measured using primary cultures of human skin fibroblasts, and the spectrum of induced mutations are analyzed. The LET of the charged particles ranged from 25 KeV/micrometer to 975 KeV/micrometer with particle energy (on the cells) between 94-603 MeV/u. The X-chromosome linked hypoxanthine guanine phosphoribosyl transferase (hprt) locus was used as the target gene. Exposure to these high LET charged particles resulted in exponential survival curves; whereas, mutation induction was fitted by a linear model. The Relative Biological Effect (RBE) for cell-killing ranged from 3.73 to 1.25, while that for mutant induction ranged from 5.74 to 0.48. Maximum RBE values were obtained at the LET of 150 keV/micrometer. The inactivation cross-section (alpha i) and the action cross-section for mutant induction (alpha m) ranged from 2.2 to 92.0 micrometer2 and 0.09 to 5.56 x 10(-3) micrometer2, respectively. The maximum values were obtained by 56Fe with an LET of 200 keV/micrometer. The mutagenicity (alpha m/alpha i) ranged from 2.05 to 7.99 x 10(-5) with the maximum value at 150 keV/micrometer. Furthermore, molecular analysis of mutants induced by charged particles indicates that higher LET beams are more likely to cause larger deletions in the hprt locus.

  7. Photoproduction of charged particle with high transverse momentum

    International Nuclear Information System (INIS)

    Campos Costa Ramos, S.E. de.

    1986-09-01

    Inclusive cross sections of high transverse moment charged pions induced by a high energy photon beam have been measured. These results do not account, neither in slope nor in normalisation, for the VDM component of the photon, evaluated with pion induced data taken in the same experimental conditions after VDM subtraction, excellent agreement is found with QCD calculations up to second order in α s , in an extended cinematic region, different choices of the gluon fragmentation function do not alter this conclusion. Our measures of the inclusive final state charge asymmetries also confirm QCD expectations. 42 refs [fr

  8. Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Science.gov (United States)

    Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

    2011-08-01

    Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

  9. HITRAP: A Facility for Experiments with Trapped Highly Charged Ions

    International Nuclear Information System (INIS)

    Quint, W.; Dilling, J.; Djekic, S.; Haeffner, H.; Hermanspahn, N.; Kluge, H.-J.; Marx, G.; Moore, R.; Rodriguez, D.; Schoenfelder, J.; Sikler, G.; Valenzuela, T.; Verdu, J.; Weber, C.; Werth, G.

    2001-01-01

    HITRAP is a planned ion trap facility for capturing and cooling of highly charged ions produced at GSI in the heavy-ion complex of the UNILAC-SIS accelerators and the ESR storage ring. In this facility heavy highly charged ions up to uranium will be available as bare nuclei, hydrogen-like ions or few-electron systems at low temperatures. The trap for receiving and studying these ions is designed for operation at extremely high vacuum by cooling to cryogenic temperatures. The stored highly charged ions can be investigated in the trap itself or can be extracted from the trap at energies up to about 10 keV/q. The proposed physics experiments are collision studies with highly charged ions at well-defined low energies (eV/u), high-accuracy measurements to determine the g-factor of the electron bound in a hydrogen-like heavy ion and the atomic binding energies of few-electron systems, laser spectroscopy of HFS transitions and X-ray spectroscopy

  10. High density thermite mixture for shaped charge ordnance disposal

    Directory of Open Access Journals (Sweden)

    Tamer Elshenawy

    2017-10-01

    Full Text Available The effect of thermite mixture based on aluminum and ferric oxides for ammunition neutralization has been studied and tested. Thermochemical calculations have been carried out for different percentage of Al using Chemical Equilibrium Code to expect the highest performance thermite mixture used for shaped charge ordnance disposal. Densities and enthalpy of different formulations have been calculated and demonstrated. The optimized thermite formulation has been prepared experimentally using cold iso-static pressing technique, which exhibited relatively high density and high burning rate thermite mixture. The produced green product compacted powder mixture was tested against small caliber shaped charge bomblet for neutralization. Theoretical and experimental results showed that the prepared thermite mixture containing 33% of aluminum as a fuel with ferric oxide can be successfully used for shaped charge ordnance disposal.

  11. Polyoxovanadate-alkoxide clusters as multi-electron charge carriers for symmetric non-aqueous redox flow batteries.

    Science.gov (United States)

    VanGelder, L E; Kosswattaarachchi, A M; Forrestel, P L; Cook, T R; Matson, E M

    2018-02-14

    Non-aqueous redox flow batteries have emerged as promising systems for large-capacity, reversible energy storage, capable of meeting the variable demands of the electrical grid. Here, we investigate the potential for a series of Lindqvist polyoxovanadate-alkoxide (POV-alkoxide) clusters, [V 6 O 7 (OR) 12 ] (R = CH 3 , C 2 H 5 ), to serve as the electroactive species for a symmetric, non-aqueous redox flow battery. We demonstrate that the physical and electrochemical properties of these POV-alkoxides make them suitable for applications in redox flow batteries, as well as the ability for ligand modification at the bridging alkoxide moieties to yield significant improvements in cluster stability during charge-discharge cycling. Indeed, the metal-oxide core remains intact upon deep charge-discharge cycling, enabling extremely high coulombic efficiencies (∼97%) with minimal overpotential losses (∼0.3 V). Furthermore, the bulky POV-alkoxide demonstrates significant resistance to deleterious crossover, which will lead to improved lifetime and efficiency in a redox flow battery.

  12. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  13. Production of highly charged ion beams from ECR ion sources

    International Nuclear Information System (INIS)

    Xie, Z.Q.

    1997-09-01

    Electron Cyclotron Resonance (ECR) ion source development has progressed with multiple-frequency plasma heating, higher mirror magnetic fields and better technique to provide extra cold electrons. Such techniques greatly enhance the production of highly charged ions from ECR ion sources. So far at cw mode operation, up to 300 eμA of O 7+ and 1.15 emA of O 6+ , more than 100 eμA of intermediate heavy ions for charge states up to Ar 13+ , Ca 13+ , Fe 13+ , Co 14+ and Kr 18+ , and tens of eμA of heavy ions with charge states to Kr 26+ , Xe 28+ , Au 35+ , Bi 34+ and U 34+ have been produced from ECR ion sources. At an intensity of at least 1 eμA, the maximum charge state available for the heavy ions are Xe 36+ , Au 46+ , Bi 47+ and U 48+ . An order of magnitude enhancement for fully stripped argon ions (I ≥ 60 enA) also has been achieved. This article will review the ECR ion source progress and discuss key requirement for ECR ion sources to produce the highly charged ion beams

  14. Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

    Science.gov (United States)

    Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

    2018-04-01

    Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

  15. Electron capture by highly charged ions from surfaces and gases

    Energy Technology Data Exchange (ETDEWEB)

    Allen, F.

    2008-01-11

    In this study highly charged ions produced in Electron Beam Ion Traps are used to investigate electron capture from surfaces and gases. The experiments with gas targets focus on spectroscopic measurements of the K-shell x-rays emitted at the end of radiative cascades following electron capture into Rydberg states of Ar{sup 17+} and Ar{sup 18+} ions as a function of collision energy. The ions are extracted from an Electron Beam Ion Trap at an energy of 2 keVu{sup -1}, charge-selected and then decelerated down to 5 eVu{sup -1} for interaction with an argon gas target. For decreasing collision energies a shift to electron capture into low orbital angular momentum capture states is observed. Comparative measurements of the K-shell x-ray emission following electron capture by Ar{sup 17+} and Ar{sup 18+} ions from background gas in the trap are made and a discrepancy in the results compared with those from the extraction experiments is found. Possible explanations are discussed. For the investigation of electron capture from surfaces, highly charged ions are extracted from an Electron Beam Ion Trap at energies of 2 to 3 keVu{sup -1}, charge-selected and directed onto targets comprising arrays of nanoscale apertures in silicon nitride membranes. The highly charged ions implemented are Ar{sup 16+} and Xe{sup 44+} and the aperture targets are formed by focused ion beam drilling in combination with ion beam assisted thin film deposition, achieving hole diameters of 50 to 300 nm and aspect ratios of 1:5 to 3:2. After transport through the nanoscale apertures the ions pass through an electrostatic charge state analyzer and are detected. The percentage of electron capture from the aperture walls is found to be much lower than model predictions and the results are discussed in terms of a capillary guiding mechanism. (orig.)

  16. Electron capture by highly charged ions from surfaces and gases

    International Nuclear Information System (INIS)

    Allen, F.

    2008-01-01

    In this study highly charged ions produced in Electron Beam Ion Traps are used to investigate electron capture from surfaces and gases. The experiments with gas targets focus on spectroscopic measurements of the K-shell x-rays emitted at the end of radiative cascades following electron capture into Rydberg states of Ar 17+ and Ar 18+ ions as a function of collision energy. The ions are extracted from an Electron Beam Ion Trap at an energy of 2 keVu -1 , charge-selected and then decelerated down to 5 eVu -1 for interaction with an argon gas target. For decreasing collision energies a shift to electron capture into low orbital angular momentum capture states is observed. Comparative measurements of the K-shell x-ray emission following electron capture by Ar 17+ and Ar 18+ ions from background gas in the trap are made and a discrepancy in the results compared with those from the extraction experiments is found. Possible explanations are discussed. For the investigation of electron capture from surfaces, highly charged ions are extracted from an Electron Beam Ion Trap at energies of 2 to 3 keVu -1 , charge-selected and directed onto targets comprising arrays of nanoscale apertures in silicon nitride membranes. The highly charged ions implemented are Ar 16+ and Xe 44+ and the aperture targets are formed by focused ion beam drilling in combination with ion beam assisted thin film deposition, achieving hole diameters of 50 to 300 nm and aspect ratios of 1:5 to 3:2. After transport through the nanoscale apertures the ions pass through an electrostatic charge state analyzer and are detected. The percentage of electron capture from the aperture walls is found to be much lower than model predictions and the results are discussed in terms of a capillary guiding mechanism. (orig.)

  17. Mean charged hadron multiplicities in high-energy collisions

    Energy Technology Data Exchange (ETDEWEB)

    Albini, E [Istituto di Matematica dell' Universita Cattolica di Brescia (Italy); Capiluppi, P; Giacomelli, G; Rossi, A M [Bologna Univ. (Italy). Istituto di Fisica

    1976-03-01

    A collection of mean charged hadron multiplicities per inelastic collision in various high-energy processes is presented. An extensive list of fits of as a function of energy is presented and discussed. As the energy increases the multiplicities for different collisions tend to a unique curve, independent of the type of colliding particles.

  18. Thermal spike analysis of highly charged ion tracks

    International Nuclear Information System (INIS)

    Karlušić, M.; Jakšić, M.

    2012-01-01

    The irradiation of material using swift heavy ion or highly charged ion causes excitation of the electron subsystem at nanometer scale along the ion trajectory. According to the thermal spike model, energy deposited into the electron subsystem leads to temperature increase due to electron–phonon coupling. If ion-induced excitation is sufficiently intensive, then melting of the material can occur, and permanent damage (i.e., ion track) can be formed upon rapid cooling. We present an extension of the analytical thermal spike model of Szenes for the analysis of surface ion track produced after the impact of highly charged ion. By applying the model to existing experimental data, more than 60% of the potential energy of the highly charged ion was shown to be retained in the material during the impact and transformed into the energy of the thermal spike. This value is much higher than 20–40% of the transferred energy into the thermal spike by swift heavy ion. Thresholds for formation of highly charged ion track in different materials show uniform behavior depending only on few material parameters.

  19. Production of highly charged ion beams with SECRAL

    International Nuclear Information System (INIS)

    Sun, L. T.; Zhao, H. W.; Zhang, X. Z.; Feng, Y. C.; Li, J. Y.; Guo, X. H.; Ma, H. Y.; Zhao, H. Y.; Ma, B. H.; Wang, H.; Li, X. X.; Jin, T.; Xie, D. Z.; Lu, W.; Cao, Y.; Shang, Y.

    2010-01-01

    Superconducting electron cyclotron resonance ion source with advanced design in Lanzhou (SECRAL) is an all-superconducting-magnet electron cyclotron resonance ion source (ECRIS) for the production of intense highly charged ion beams to meet the requirements of the Heavy Ion Research Facility in Lanzhou (HIRFL). To further enhance the performance of SECRAL, an aluminum chamber has been installed inside a 1.5 mm thick Ta liner used for the reduction of x-ray irradiation at the high voltage insulator. With double-frequency (18+14.5 GHz) heating and at maximum total microwave power of 2.0 kW, SECRAL has successfully produced quite a few very highly charged Xe ion beams, such as 10 e μA of Xe 37+ , 1 e μA of Xe 43+ , and 0.16 e μA of Ne-like Xe 44+ . To further explore the capability of the SECRAL in the production of highly charged heavy metal ion beams, a first test run on bismuth has been carried out recently. The main goal is to produce an intense Bi 31+ beam for HIRFL accelerator and to have a feel how well the SECRAL can do in the production of very highly charged Bi beams. During the test, though at microwave power less than 3 kW, more than 150 e μA of Bi 31+ , 22 e μA of Bi 41+ , and 1.5 e μA of Bi 50+ have been produced. All of these results have again demonstrated the great capability of the SECRAL source. This article will present the detailed results and brief discussions to the production of highly charged ion beams with SECRAL.

  20. Photoinduced High-Frequency Charge Oscillations in Dimerized Systems

    Science.gov (United States)

    Yonemitsu, Kenji

    2018-04-01

    Photoinduced charge dynamics in dimerized systems is studied on the basis of the exact diagonalization method and the time-dependent Schrödinger equation for a one-dimensional spinless-fermion model at half filling and a two-dimensional model for κ-(bis[ethylenedithio]tetrathiafulvalene)2X [κ-(BEDT-TTF)2X] at three-quarter filling. After the application of a one-cycle pulse of a specifically polarized electric field, the charge densities at half of the sites of the system oscillate in the same phase and those at the other half oscillate in the opposite phase. For weak fields, the Fourier transform of the time profile of the charge density at any site after photoexcitation has peaks for finite-sized systems that correspond to those of the steady-state optical conductivity spectrum. For strong fields, these peaks are suppressed and a new peak appears on the high-energy side, that is, the charge densities mainly oscillate with a single frequency, although the oscillation is eventually damped. In the two-dimensional case without intersite repulsion and in the one-dimensional case, this frequency corresponds to charge-transfer processes by which all the bonds connecting the two classes of sites are exploited. Thus, this oscillation behaves as an electronic breathing mode. The relevance of the new peak to a recently found reflectivity peak in κ-(BEDT-TTF)2X after photoexcitation is discussed.

  1. ERC sources for the production of highly charged ions (invited)

    International Nuclear Information System (INIS)

    Lyneis, C.M.; Antaya, T.A.

    1990-01-01

    Electron cyclotron resonance ion sources (ECRIS) using rf between 5 and 16 GHz have been developed into stable, reliable sources of highly charged ions produced from a wide range of elements. These devices are currently used as ion sources for cyclotrons, synchrotrons, and heavy-ion linacs for nuclear and relativistic heavy-ion physics. They also serve the atomic physics community as a source of low energy multiply charged ions. In order to improve their performance both with respect to maximum charge state and beam intensity, ECRIS builders are now designing and constructing sources which will operate at frequencies up to 30 GHz. In this article we review the present status of operating ECRIS, review recent experimental measurements on plasma parameters, and look at the technology and potential of sources operating at frequencies up to 30 GHz

  2. Vacuum improvements for ultra high charge state ion acceleration

    International Nuclear Information System (INIS)

    Xie, Z.Q.; Lyneis, C.M.; Clark, D.J.; Guy, A.; Lundgren, S.A

    1998-06-01

    The installation of a second cryo panel has significantly improved the vacuum in the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. The neutral pressure in the extraction region decreased from 1.2 x 10 -6 down to about 7 x 10 -7 Torr. The vacuum improvement reduces beam loss from charge changing collisions and enhances the cyclotron beam transmission, especially for the high charge state heavy ions. Tests with improved vacuum show the cyclotron transmission increased more than 50% (from 5.7% to 9.0%) for a Xe 27+ at 603 MeV, more than doubled for a Bi 41+ beam (from 1.9% to 4.6%) at 904 MeV and tripled for a U 47+ beam (from 1.2% to 3.6%) at 1,115 MeV. At about 5 NeV/nucleon 92 enA (2.2 pnA) for Bi 41+ and 14 enA (0.3 pnA) for U 47+ were extracted ut of the 88-Inch Cyclotron Ion beams with charge states as high as U 64+ have been produced by the LBNL AECR-U ion source and accelerated through the cyclotron for the first time. The beam losses for a variety of ultra high charge state ions were measured as a function of cyclotron pressure and compared with the calculations from the existing models

  3. Vacuum improvements for ultra high charge state ion acceleration

    International Nuclear Information System (INIS)

    Xie, Z.Q.; Lyneis, C.M.; Clark, D.J.; Guy, A.; Lundgren, S.A.

    1999-01-01

    The installation of a second cryo panel has significantly improved the vacuum in the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. The neutral pressure in the extraction region decreased from 1.2 x 10 -6 down to about 7 x 10 -7 Torr. The vacuum improvement reduces beam loss from charge changing collisions and enhances the cyclotron beam transmission, especially for the high charge state heavy ions. Tests with improved vacuum show the cyclotron transmission increased more than 50% (from 5.7% to 9.0%) for a Xe 27+ at 603 MeV, more than doubled for a Bi 41+ beam (from 1.9% % to 4.6%) at 904 MeV and tripled for a U 47+ beam (from 1.2% to 3.6%) at 1115 MeV. At about 5 MeV/nucleon 92 enA (2.2 pnA) for Bi 41+ and 14 enA (0.3 pnA) for U 47+ were extracted out of the 88-Inch Cyclotron Ion beams with charge states as high as U 64+ have been produced by the LBNL AECR-U ion source and accelerated through the cyclotron for the first time. The beam losses for a variety of ultra high charge state ions were measured as a function of cyclotron pressure and compared with the calculations from the existing models. (authors)

  4. On measurement of charge behavior with super high velocity formed in semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Hirao, Toshio; Sakai, Takuro; Hamano, Tsuyoshi; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Nemoto, Norio; Matsuda, Sumio

    1996-12-01

    The basic process of single event phenomenon of the semiconductor element consists of formation of electron and positive hole pair due to penetration of incident particle and collection of small number of carrier into pn-junction added with inverse bias. This collecting process has a rapid process of about 200 ps and a late process reaching to some nanoseconds. And, it is an important problem to develop radiation resistant element of superconducting element usable for the space environment to acquire single event parameter by directly observing charge collection using pn-junction diode constructing basic structure of the semiconductor element. At present, an experiment on the single event phenomenon in actual device is executed by using cyclotron of TIARA irradiation facility in Takasaki Radiation Chemistry Research Establishment, JAERI. On the other hand, the experiments on mechanism elucidation of the single event phenomenon and so on are conducting by using heavy ion microbeam installed at tandem accelerator. As an experiment result measured high speed charge collection on irradiating the heavy ion microbeam into the semiconductor element, following items were found: (1) The single event transient current waveform becomes high in its peak and many in collected charge with magnitude of LET, (2) rise of the transient current waveform formed in each ion specie shows a shift to long time side with increase of LET, and so forth. (G.K.)

  5. Laser focusing of high-energy charged-particle beams

    International Nuclear Information System (INIS)

    Channell, P.J.

    1986-01-01

    It is shown that laser focusing of high-energy charged-particle beams using the inverse Cherenkov effect is well suited for applications with large linear colliders. Very high gradient (>0.5 MG/cm) lenses result that can be added sequentially without AG cancellation. These lenses are swell understood, have small geometric aberrations, and offer the possibility of correlating phase and energy aberrations to produce an achromatic final focus

  6. Electron impact ionization of highly charged lithiumlike ions

    International Nuclear Information System (INIS)

    Wong, K.L.

    1992-10-01

    Electron impact ionization cross sections can provide valuable information about the charge-state and power balance of highly charged ions in laboratory and astrophysical plasmas. In the present work, a novel technique based on x-ray measurements has been used to infer the ionization cross section of highly charged lithiumlike ions on the Livermore electron beam ion trap. In particular, a correspondence is established between an observed x ray and an ionization event. The measurements are made at one energy corresponding to approximately 2.3 times the threshold energy for ionization of lithiumlike ions. The technique is applied to the transition metals between Z=22 (titanium, Ti 19+ ) and Z=26 (iron, Fe 23+ ) and to Z=56 (barium, Ba 53+ ). The results for the transition metals, which have an estimated 17-33% uncertainty, are in good overall agreement with a relativistic distorted-wave calculation. However, less good agreement is found for barium, which has a larger uncertainty. Methods for properly accounting for the polarization in the x-ray intensities and for inferring the charge-state abundances from x-ray observations, which were developed for the ionization measurements, as well as an x-ray model that assists in the proper interpretation of the data are also presented

  7. Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation

    CERN Document Server

    Garibov, A A; Agaev, T N

    1999-01-01

    The effect of the degree of order of SiO sub 2 on the localization process of non-equilibrium charge carriers (NCC) when exposed to gamma-quanta at 77 K has been investigated. It has been found that with decreasing SiO sub 2 structure degree of order, a localization probability of NCC increases. A contribution of surface defect states in SiO sub 2 to localization, migration and recombination annihilation processes of NCC induced by ionizing radiation has been determined.

  8. Charge transport in highly efficient iridium cored electrophosphorescent dendrimers

    Science.gov (United States)

    Markham, Jonathan P. J.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.; Weiter, Martin; Bässler, Heinz

    2004-01-01

    Electrophosphorescent dendrimers are promising materials for highly efficient light-emitting diodes. They consist of a phosphorescent core onto which dendritic groups are attached. Here, we present an investigation into the optical and electronic properties of highly efficient phosphorescent dendrimers. The effect of dendrimer structure on charge transport and optical properties is studied using temperature-dependent charge-generation-layer time-of-flight measurements and current voltage (I-V) analysis. A model is used to explain trends seen in the I-V characteristics. We demonstrate that fine tuning the mobility by chemical structure is possible in these dendrimers and show that this can lead to highly efficient bilayer dendrimer light-emitting diodes with neat emissive layers. Power efficiencies of 20 lm/W were measured for devices containing a second-generation (G2) Ir(ppy)3 dendrimer with a 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene electron transport layer.

  9. Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

    OpenAIRE

    Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

    2014-01-01

    Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

  10. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    Science.gov (United States)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  11. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil

    2016-01-01

    absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

  12. Interaction of low-energy highly charged ions with matter

    International Nuclear Information System (INIS)

    Ginzel, Rainer

    2010-01-01

    The thesis presented herein deals with experimental studies of the interaction between highly charged ions and neutral matter at low collision energies. The energy range investigated is of great interest for the understanding of both charge exchange reactions between ions comprising the solar wind and various astrophysical gases, as well as the creation of near-surface nanostructures. Over the course of this thesis an experimental setup was constructed, capable of reducing the kinetic energy of incoming ions by two orders of magnitude and finally focussing the decelerated ion beam onto a solid or gaseous target. A coincidence method was employed for the simultaneous detection of photons emitted during the charge exchange process together with the corresponding projectile ions. In this manner, it was possible to separate reaction channels, whose superposition presumably propagated large uncertainties and systematic errors in previous measurements. This work has unveiled unexpectedly strong contributions of slow radiative decay channels and clear evidence of previously only postulated decay processes in charge exchange-induced X-ray spectra. (orig.)

  13. Organic-inorganic hybrid perovskite quantum dots with high PLQY and enhanced carrier mobility through crystallinity control by solvent engineering and solid-state ligand exchange.

    Science.gov (United States)

    Woo Choi, Jin; Woo, Hee Chul; Huang, Xiaoguang; Jung, Wan-Gil; Kim, Bong-Joong; Jeon, Sie-Wook; Yim, Sang-Youp; Lee, Jae-Suk; Lee, Chang-Lyoul

    2018-05-22

    The photoluminescence quantum yield (PLQY) and charge carrier mobility of organic-inorganic perovskite QDs were enhanced by the optimization of crystallinity and surface passivation as well as solid-state ligand exchange. The crystallinity of perovskite QDs was determined by the Effective solvent field (Esol) of various solvents for precipitation. The solvent with high Esol could more quickly countervail the localized field generated by the polar solvent, and it causes fast crystallization of the dissolved precursor, which results in poor crystallinity. The post-ligand adding process (PLAP) and post-ligand exchange process (PLEP) increase the PLQY of perovskite QDs by reducing non-radiative recombination and the density of surface defect states through surface passivation. Particularly, the post ligand exchange process (PLEP) in the solid-state improved the charge carrier mobility of perovskite QDs in addition to the PLQY enhancement. The ligand exchange with short alkyl chain length ligands could improve the packing density of perovskite QDs in films by reducing the inter-particle distance between perovskite QDs. The maximum hole mobility of 6.2 × 10-3 cm2 V-1 s-1, one order higher than that of pristine QDs without the PLEP, is obtained at perovskite QDs with hexyl ligands. By using PLEP treatment, compared to the pristine device, a 2.5 times higher current efficiency in perovskite QD-LEDs was achieved due to the improved charge carrier mobility and PLQY.

  14. Design of a charge sensitive preamplifier on high resistivity silicon

    International Nuclear Information System (INIS)

    Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

    1987-01-01

    A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

  15. Quantum electrodynamical effects in heavy highly-charged ions

    International Nuclear Information System (INIS)

    Yerokhin, V.A.; Artemyev, A.N.; Indelicato, P.; Shabaev, V.M.

    2003-01-01

    The present status of theoretical calculations of QED effects in highly charged ions is reviewed for several important cases: the Lamb shift in heavy H-like ions, the 2p 1/2 -2s transition energy in heavy Li-like ions, and the bound-electron g factor in H-like ions. Theoretical predictions are compared with experimental results. Special attention is paid to the discussion of uncertainties of theoretical predictions

  16. Progress in quantum electrodynamics theory of highly charged ions

    OpenAIRE

    Volotka, A. V.; Glazov, D. A.; Plunien, G.; Shabaev, V. M.

    2013-01-01

    Recent progress in quantum electrodynamics (QED) calculations of highly charged ions is reviewed. The theoretical predictions for the binding energies, the hyperfine splittings, and the g factors are presented and compared with available experimental data. Special attention is paid to tests of bound-state QED at strong field regime. Future prospects for tests of QED at the strongest electric and magnetic fields as well as for determination of the fine structure constant and the nuclear magnet...

  17. Gradient Self-Doped CuBi2O4 with Highly Improved Charge Separation Efficiency.

    Science.gov (United States)

    Wang, Fuxian; Septina, Wilman; Chemseddine, Abdelkrim; Abdi, Fatwa F; Friedrich, Dennis; Bogdanoff, Peter; van de Krol, Roel; Tilley, S David; Berglund, Sean P

    2017-10-25

    A new strategy of using forward gradient self-doping to improve the charge separation efficiency in metal oxide photoelectrodes is proposed. Gradient self-doped CuBi 2 O 4 photocathodes are prepared with forward and reverse gradients in copper vacancies using a two-step, diffusion-assisted spray pyrolysis process. Decreasing the Cu/Bi ratio of the CuBi 2 O 4 photocathodes introduces Cu vacancies that increase the carrier (hole) concentration and lowers the Fermi level, as evidenced by a shift in the flat band toward more positive potentials. Thus, a gradient in Cu vacancies leads to an internal electric field within CuBi 2 O 4 , which can facilitate charge separation. Compared to homogeneous CuBi 2 O 4 photocathodes, CuBi 2 O 4 photocathodes with a forward gradient show highly improved charge separation efficiency and enhanced photoelectrochemical performance for reduction reactions, while CuBi 2 O 4 photocathodes with a reverse gradient show significantly reduced charge separation efficiency and photoelectrochemical performance. The CuBi 2 O 4 photocathodes with a forward gradient produce record AM 1.5 photocurrent densities for CuBi 2 O 4 up to -2.5 mA/cm 2 at 0.6 V vs RHE with H 2 O 2 as an electron scavenger, and they show a charge separation efficiency of 34% for 550 nm light. The gradient self-doping accomplishes this without the introduction of external dopants, and therefore the tetragonal crystal structure and carrier mobility of CuBi 2 O 4 are maintained. Lastly, forward gradient self-doped CuBi 2 O 4 photocathodes are protected with a CdS/TiO 2 heterojunction and coated with Pt as an electrocatalyst. These photocathodes demonstrate photocurrent densities on the order of -1.0 mA/cm 2 at 0.0 V vs RHE and evolve hydrogen with a faradaic efficiency of ∼91%.

  18. Electron capture by highly charged low-velocity ions

    International Nuclear Information System (INIS)

    Cocke, C.L.; Dubois, R.; Justiniano, E.; Gray, T.J.; Can, C.

    1982-01-01

    This paper describes the use of a fast heavy ion beam to produce, by bombardment of gaseous targets, highly-charged low-velocity recoil ions, and the use of these secondary ions in turn as projectiles in studies of electron capture and ionization in low-energy collision systems. The interest in collisions involving low-energy highly-charged projectiles comes both from the somewhat simplifying aspects of the physics which attend the long-range capture and from applications to fusion plasmas, astrophysics and more speculative technology such as the production of X-ray lasers. The ions of interest in such applications should have both electronic excitation and center-of-mass energies in the keV range and cannot be produced by simply stripping fast heavy ion beams. Several novel types of ion source have been developed to produce low-energy highly-charged ions, of which the secondary ion recoil source discussed in this paper is one. (Auth.)

  19. Light absorption in thin quantizing semiconductor wires with non-parabolic law of dispersion of charge carriers

    International Nuclear Information System (INIS)

    Djotian, A.P.; Kazarian, E.M.; Karakashinian, Y.V.

    1993-01-01

    Interband absorption of light in a quantizing wire with non-parabolic dispersion law of charge carries, as well as energy spectrum and state densities are studied. The effect of Coulomb interaction between particles on the spectral curve of interband absorption is considered. Non-parabolic dispersion law of charge carries leads to an essential displacement of absorption line to ground state of one-dimensional exciton. 7 refs

  20. Status of Charge Exchange Cross Section Measurements for Highly Charged Ions on Atomic Hydrogen

    Science.gov (United States)

    Draganic, I. N.; Havener, C. C.; Schultz, D. R.; Seely, D. G.; Schultz, P. C.

    2011-05-01

    Total cross sections of charge exchange (CX) for C5+, N6+, and O7+ ions on ground state atomic hydrogen are measured in an extended collision energy range of 1 - 20,000 eV/u. Absolute CX measurements are performed using an improved merged-beams technique with intense highly charged ion beams extracted from a 14.5 GHz ECR ion source mounted on a high voltage platform. In order to improve the problematic H+ signal collection for these exoergic CX collisions at low relative energies, a new double focusing electrostatic analyzer was installed. Experimental CX data are in good agreement with all previous H-oven relative measurements at higher collision energies. We compare our results with the most recent molecular orbital close-coupling (MOCC) and atomic orbital close-coupling (AOCC) theoretical calculations. Work supported by the NASA Solar & Heliospheric Physics Program NNH07ZDA001N, the Office of Fusion Energy Sciences and the Division of Chemical Sciences, Geosciences, and Biosciences, and the Office of Basic Energy Sciences of the U.S. DoE.

  1. Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

    Science.gov (United States)

    Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

    2013-10-14

    The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

  2. High accuracy positioning using carrier-phases with the opensource GPSTK software

    OpenAIRE

    Salazar Hernández, Dagoberto José; Hernández Pajares, Manuel; Juan Zornoza, José Miguel; Sanz Subirana, Jaume

    2008-01-01

    The objective of this work is to show how using a proper GNSS data management strategy, combined with the flexibility provided by the open source "GPS Toolkit" (GPSTk), it is possible to easily develop both simple code-based processing strategies as well as basic high accuracy carrier-phase positioning techniques like Precise Point Positioning (PPP

  3. Boosting the Visible-Light Photoactivity of BiOCl/BiVO4/N-GQD Ternary Heterojunctions Based on Internal Z-Scheme Charge Transfer of N-GQDs: Simultaneous Band Gap Narrowing and Carrier Lifetime Prolonging.

    Science.gov (United States)

    Zhu, Mingyue; Liu, Qian; Chen, Wei; Yin, Yuanyuan; Ge, Lan; Li, Henan; Wang, Kun

    2017-11-08

    The efficient separation of photogenerated electron-hole pairs in photoactive materials is highly desired, allowing their transfer to specific sites for undergoing redox reaction in various applications. The construction of ternary heterojunctions is a practical strategy to enhance the migration of photogenerated electron that realizes the synergistic effect of multicomponents rather than the simple overlay of single component. Here, we demonstrate an available way to fabricate new BiOCl/BiVO 4 /nitrogen-doped graphene quantum dot (N-GQD) ternary heterojunctions that exhibit higher efficiency in charge separation than any binary heterojunction or pure material under visible-light irradiation. UV-vis diffuse reflectance spectroscopy demonstrated that the proposed BiOCl/BiVO 4 /N-GQD ternary heterojunctions possess the narrower band gap energy. More importantly, the ternary heterojunctions reveal the prolonged lifetime of photogenerated charges and enhanced the separation efficiency of photogenerated electron-hole pairs, which may be ascribed to sensitization based on an internal Z-scheme charge transfer at the interface of N-GQDs with oxygen functional groups. Furthermore, we examine the photoactive performance of proposed ternary heterojunctions in aqueous solution by using the photodegradation of bisphenol A as a model system and BiOCl/BiVO 4 /N-GQD ternary heterojunctions also display a dramatically enhanced photodegradation rate. The proposed charge separation and transfer process of BiOCl/BiVO 4 /N-GQD ternary heterojunctions for the enhanced photoactivity were deduced by electrochemical measurements, photoluminescence, and electron spin resonance. The results demonstrate that a Z-scheme charge process was formed between BiOCl/BiVO 4 binary heterojunctions and N-GQDs, leading to an efficient charge carrier separation and strong photocatalytic ability. Notably, this work may assist in a better understanding of the role of N-GQDs in kinds of heterojunctions

  4. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  5. Highly charged ion impact induced nanodefects in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Makgato, T.N., E-mail: thuto.makgato@wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Microscopy and Microanalysis Unit, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Centre of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Schenkel, T. [E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ritter, R.; Kowarik, G.; Aumayr, F. [Institute of Applied Physics, TU Wien-Vienna University of Technology, 1040 Vienna (Austria); Crespo Lopez-Urrutia, J.; Bernitt, S.; Beilmann, C.; Ginzel, R. [Max-Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany)

    2013-11-01

    We investigate the interaction of slow highly charged ion (SHCI) beams with insulating type Ib diamond (1 1 1) surfaces. Bismuth and Xenon SHCI beams produced using an Electron Beam Ion Trap (EBIT) and an Electron Cyclotron Resonance source (ECR) respectively, are accelerated onto type Ib diamond (1 1 1) surfaces with impact velocities up to ≈0.4 υ{sub Bohr}. SHCIs with charge states corresponding to potential energies between 4.5 keV and 110 keV are produced for this purpose. Atomic Force Microscopy analysis (AFM) of the diamond surfaces following SHCI impact reveals surface morphological modifications characterized as nanoscale craters (nano-craters). To interpret the results from Tapping Mode AFM analysis of the irradiated diamond surfaces we discuss the interplay between kinetic and potential energy in nano-crater formation using empirical data together with Stopping and Range of Ions in Matter (SRIM) Monte Carlo Simulations.

  6. SLC injector simulation and tuning for high charge transport

    International Nuclear Information System (INIS)

    Yeremian, A.D.; Miller, R.H.; Clendenin, J.E.; Early, R.A.; Ross, M.C.; Turner, J.L.; Wang, J.W.

    1992-08-01

    We have simulated the SLC injector from the thermionic gun through the first accelerating section and used the resulting parameters to tune the injector for optimum performance and high charge transport. Simulations are conducted using PARMELA, a three-dimensional ray-trace code with a two-dimensional space-charge model. The magnetic field profile due to the existing magnetic optics is calculated using POISSON, while SUPERFISH is used to calculate the space harmonics of the various bunchers and the accelerator cavities. The initial beam conditions in the PARMELA code are derived from the EGUN model of the gun. The resulting injector parameters from the PARMELA simulation are used to prescribe experimental settings of the injector components. The experimental results are in agreement with the results of the integrated injector model

  7. SLC injector simulation and tuning for high charge transport

    International Nuclear Information System (INIS)

    Yeremian, A.D.; Miller, R.H.; Clendenin, J.E.; Early, R.A.; Ross, M.C.; Turner, J.L.; Wang, J.W.

    1992-01-01

    We have simulated the SLC injector from the thermionic gun through the first accelerating section and used the resulting parameters to tune the injector for optimum performance and high charge transport. Simulations are conducted using PARMELA, a three-dimensional space-charge model. The magnetic field profile due to the existing magnetic optics is calculated using POISSON, while SUPERFISH is used to calculate the space harmonics of the various bunchers and the accelerator cavities. The initial beam conditions in the PARMELA code are derived from the EGUN model of the gun. The resulting injector parameters from the PARMELA simulation are used to prescribe experimental settings of the injector components. The experimental results are in agreement with the results of the integrated injector model. (Author) 5 figs., 7 refs

  8. Charge redistribution and properties of high-temperature superconductors

    International Nuclear Information System (INIS)

    Khomskii, D.I.; Kusmartsev, F.V.

    1992-01-01

    We show that in high-T c superconductors (HTSC) with two groups of electrons (e.g., holes in CuO 2 planes and in a ''reservoir'') there should exist a charge redistribution with the temperature: the hole concentration N h in ''active'' superconducting CuO 2 planes increases below T c . This effect may explain structural changes such as the shift of the apical oxygen atom, anomalous thermal expansion, the shift of nuclear quadrupole resonance lines, the change of the positron lifetime, and the modification of the ion channeling below T c . Some other possible consequences of the charge redistribution (the modification of the temperature dependence of a gap Δ and of the ratio 2Δ 0 /T c , the phenomena at a contact of HTSC with normal metals and semiconductors) are discussed

  9. Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Grunwald, Torben

    2009-12-17

    This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

  10. Search for highly interacting fractionally charged particles at PEP

    International Nuclear Information System (INIS)

    Wlodzimierz, G.

    1982-01-01

    Fractionally charged, highly interacting particles produced in e + e - annihilation at 20 GeV c.m. energy have been search for. The experiment was performed at the positron electron storage ring (PEP) at the Stanford Linear Accelerator Center (SLAC). The search used in the innermost part of the two-arm Free Quark Search (FQS) detector. This part was called the Thin Front End (TFE) and it covered 1/3 of the full solid angle. Each of its arms consisted of five multiwire proportional chambers (MWPC's), used for tracking and dE/dx measurement, and three hodoscopes of 0.16 cm thick Pilot F scintillator. The total thickness of the five MWPC's and the beam pipe was 0.007 hadronic collision lengths (lambda/sub c/). No candidates for fractionally charged particles were found. Upper limits on R/sub q anti q/ = sigma(e + e - →q anti q)/sigma(e + e - →μμ) are between: (1) 0.7% to 7% for quark interaction lengths (lambda/sub q/) equal to lambda/sub c/ and between 3% and 33% for lambda/sub q/ = 100lambda/sub c/ for Q = 1/3e quark charge and for quark masses up to 13 GeV/c 2 ; (2) 2% to 38% for lambda/sub q/ - lambda/sub c/ and from 7% to 160% for lambda/sub q/ = 100lambda/sub c/ for Q = 2/3e quark charge and for masses up to 8 GeV/c 2 . In the inclusive production channel the upper limits on R/sub q/ = sigma(e + e - →qqX)/sigma(e + e - →μμ) are for charge 1/3e only. R/sub q/ varies from 2% to 11% for lambda/sub q/ = lambda/sub c/ and from 3% to 16% for lambda/sub q/ = 100lambda/sub c/ and for quark masses up to 6.5 GeV/c 2 . These are the first limits on the production of fractionally charged particles with lambda/sub q/ = 100lambda/sub c/

  11. Anisotropy in highly charged ion induced molecule fragmentation

    International Nuclear Information System (INIS)

    Juhasz, Z.; Sulik, B.; Fremont, F.; Chesnel, J.Y.; Hajaji, A.

    2006-01-01

    Complete text of publication follows. Studying fragmentation processes of biologically relevant molecules due to highly charged ion impact is important to understand radiation damage in biological tissues. Energy spectra of the charged molecule fragments may reveal the different fragmentation patterns meanwhile the angular distributions of the fragments characterize the dependence of fragmentation probability on the initial orientation of the molecule. The research to explore the angular distribution of the molecule fragments has only recently been started[1]. In 2006 we performed measurements at ARIBE facility at GANIL, Caen (France), in order to investigate orientation effects in molecule fragmentation. Fragmentation of H 2 O, C 6 H 6 and CH 4 , which represent different level of symmetry, have been studied by 60 keV N 6+ ion impact. Energy spectra of the charged fragments at different observation angles have been taken. As our example spectra show the different protonic peaks can be attributed to different fragmentation processes. Significant anisotropy can be seen in the different processes. The strongest evidence for the anisotropy can be seen in the spectra of C 6 H 6 , where the spectra appear isotropic in almost the whole observed energy range except one peak, which has a strong angular dependence and is maximal around 90 deg. (author)

  12. Highly charged cyanine fluorophores for trafficking scaffold degradation

    International Nuclear Information System (INIS)

    Owens, Eric A; Alyabyev, Sergey; Henary, Maged; Hyun, Hoon; Kim, Soon Hee; Lee, Jeong Heon; Park, GwangLi; Ashitate, Yoshitomo; Choi, Jungmun; Hong, Gloria H; Choi, Hak Soo; Lee, Sang Jin; Khang, Gilson

    2013-01-01

    Biodegradable scaffolds have been extensively used in the field of tissue engineering and regenerative medicine. However, noninvasive monitoring of in vivo scaffold degradation is still lacking. In order to develop a real-time trafficking technique, a series of meso-brominated near-infrared (NIR) fluorophores were synthesized and conjugated to biodegradable gelatin scaffolds. Since the pentamethine cyanine core is highly lipophilic, the side chain of each fluorophore was modified with either quaternary ammonium salts or sulfonate groups. The physicochemical properties such as lipophilicity and net charge of fluorophores played a key role in the fate of NIR-conjugated scaffolds in vivo after biodegradation. The positively charged fluorophore-conjugated scaffold fragments were found in salivary glands, lymph nodes, and most of the hepatobiliary excretion route. However, halogenated fluorophores intensively accumulated into lymph nodes and the liver. Interestingly, balanced-charged gelatin scaffolds were degraded into urine in a short period of time. These results demonstrate that the noninvasive optical imaging using NIR fluorophores can be useful for the translation of biodegradable scaffolds into the clinic. (paper)

  13. Small electrostatic storage rings; also for highly charged ions?

    International Nuclear Information System (INIS)

    Moeller, S.P.; Pedersen, U.V.

    2001-01-01

    Two years ago, a small electrostatic storage ring ELISA (electrostatic ion storage ring, Aarhus) was put into operation. The design of this small 7 m circumference ring was based on electrostatic deflection plates and quadrupoles. This is in contrast to the larger ion storage rings, which are based on magnetic focusing and deflection. The result is a small, relatively inexpensive, storage ring being able to store ions of any mass and any charge at low energy ( -11 mbar resulting in storage times of several tens of seconds for singly charged ions. The maximum number of singly charged ions that can be stored is a few 10 7 . Several experiments have already been performed in ELISA. These include lifetime studies of metastable ions and studies of fullerenes and metal-cluster ions. Lasers are also used for excitation of the circulating ions. Heating/cooling of the ring is possible. Cooling of the ring leads to significantly lower pressures, and correspondingly longer lifetimes. A change of the temperature of the vacuum chambers surrounding the ion beam also leads to a change of the spectrum of the black-body radiation, which has a significant influence on weakly bound negative ions. At the time of writing, at least two other electrostatic storage rings are being built, and more are planned. In the following, the electrostatic storage ring ELISA will be described, and results from some of the initial experiments demonstrating the performance will be shown. The relative merits of such a ring, as opposed to the larger magnetic rings and the smaller ion traps will be discussed. The potential for highly charged ions will be briefly mentioned. (orig.)

  14. Evolution of electronic structure in highly charge doped MoS2 compounds

    Science.gov (United States)

    Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

    Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

  15. Model of Organic Solar Cell Photocurrent Including the Effect of Charge Accumulation at Interfaces and Non-Uniform Carrier Generation

    DEFF Research Database (Denmark)

    Torto, Lorenzo; Cester, Andrea; Rizzo, Antonio

    2017-01-01

    We developed an improved model to fit the photocurrent density versus voltage in organic solar cells. The model has been validated by fitting data from P3HT:PCBM solar cells. Our model quantitatively accounts for the band bending near the electrodes caused by charge accumulation in the active layer...

  16. Structural Arrangement of Water Molecules around Highly Charged Nanoparticles: Molecular Dynamics Simulation

    International Nuclear Information System (INIS)

    Kim, Eunae; Yeom, Min Sun

    2014-01-01

    Molecular dynamics simulations were performed to understand the structural arrangement of water molecules around highly charged nanoparticles under aqueous conditions. The effect of two highly charged nanoparticles on the solvation charge asymmetry has been examined. We calculated the radial distribution functions of the components of water molecules around nanoparticles which have four charge types at two different salt concentrations. Even though the distributions of water molecules surrounding a sodium ion and a chloride ion are hardly affected by the charges of nanoparticles and the salt concentrations, those around highly charged nanoparticles are strongly influenced by the charges of nanoparticles, but hardly by the charges of nanoparticles and salt concentrations. We find that the distributions of hydrogen atoms in water molecules around one highly charged nanoparticle are dependent on the magnitude of the nanoparticle charge

  17. Highly charged ions generated with intense laser beams

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Jungwirth, Karel; Králiková, Božena; Láska, Leoš; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Hnatowicz, Vladimír; Peřina, Vratislav; Badziak, J.; Parys, P.; Wolowski, J.; Woryna, E.; Szydlowski, A.

    2003-01-01

    Roč. 205, - (2003), s. 355-359 ISSN 0168-583X. [International Symposium on Swift Heavy Ions in Matter /5./. Taormina-Giardini Naxos, 22.05.2002-25.05.2002] R&D Projects: GA MŠk LN00A100 Grant - others:HPRI(XE) CT-1999-00053; IAEA(XE) 11535/RO Institutional research plan: CEZ:AV0Z2043910; CEZ:AV0Z1010921 Keywords : laser-produced plasma * highly charged ions * ion implantation * windowless electron multiplier Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.041, year: 2003

  18. Strong-field relativistic processes in highly charged ions

    Energy Technology Data Exchange (ETDEWEB)

    Postavaru, Octavian

    2010-12-08

    In this thesis we investigate strong-field relativistic processes in highly charged ions. In the first part, we study resonance fluorescence of laser-driven highly charged ions in the relativistic regime by solving the time-dependent master equation in a multi-level model. Our ab initio approach based on the Dirac equation allows for investigating highly relativistic ions, and, consequently, provides a sensitive means to test correlated relativistic dynamics, bound-state quantum electrodynamic phenomena and nuclear effects by applying coherent light with x-ray frequencies. Atomic dipole or multipole moments may be determined to unprecedented accuracy by measuring the interference-narrowed fluorescence spectrum. Furthermore, we investigate the level structure of heavy hydrogenlike ions in laser beams. Interaction with the light field leads to dynamic shifts of the electronic energy levels, which is relevant for spectroscopic experiments. We apply a fully relativistic description of the electronic states by means of the Dirac equation. Our formalism goes beyond the dipole approximation and takes into account non-dipole effects of retardation and interaction with the magnetic field components of the laser beam. We predicted cross sections for the inter-shell trielectronic recombination (TR) and quadruelectronic recombination processes which have been experimentally confirmed in electron beam ion trap measurements, mainly for C-like ions, of Ar, Fe and Kr. For Kr{sup 30}+, inter-shell TR contributions of nearly 6% to the total resonant photorecombination rate were found. (orig.)

  19. Irradiation of graphene field effect transistors with highly charged ions

    Energy Technology Data Exchange (ETDEWEB)

    Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

    2016-09-01

    In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

  20. Atomic physics with highly charged ions. Progress report

    Energy Technology Data Exchange (ETDEWEB)

    Richard, P.

    1994-08-01

    The study of inelastic collision phenomena with highly charged projectile ions and the interpretation of spectral features resulting from these collisions remain as the major focal points in the atomic physics research at the J.R. Macdonald Laboratory, Kansas State University, Manhattan, Kansas. The title of the research project, ``Atomic Physics with Highly Charged Ions,`` speaks to these points. The experimental work in the past few years has divided into collisions at high velocity using the primary beams from the tandem and LINAC accelerators and collisions at low velocity using the CRYEBIS facility. Theoretical calculations have been performed to accurately describe inelastic scattering processes of the one-electron and many-electron type, and to accurately predict atomic transition energies and intensities for x rays and Auger electrons. Brief research summaries are given for the following: (1) electron production in ion-atom collisions; (2) role of electron-electron interactions in two-electron processes; (3) multi-electron processes; (4) collisions with excited, aligned, Rydberg targets; (5) ion-ion collisions; (6) ion-molecule collisions; (7) ion-atom collision theory; and (8) ion-surface interactions.

  1. High-order space charge effects using automatic differentiation

    International Nuclear Information System (INIS)

    Reusch, Michael F.; Bruhwiler, David L.

    1997-01-01

    The Northrop Grumman Topkark code has been upgraded to Fortran 90, making use of operator overloading, so the same code can be used to either track an array of particles or construct a Taylor map representation of the accelerator lattice. We review beam optics and beam dynamics simulations conducted with TOPKARK in the past and we present a new method for modeling space charge forces to high-order with automatic differentiation. This method generates an accurate, high-order, 6-D Taylor map of the phase space variable trajectories for a bunched, high-current beam. The spatial distribution is modeled as the product of a Taylor Series times a Gaussian. The variables in the argument of the Gaussian are normalized to the respective second moments of the distribution. This form allows for accurate representation of a wide range of realistic distributions, including any asymmetries, and allows for rapid calculation of the space charge fields with free space boundary conditions. An example problem is presented to illustrate our approach

  2. High-order space charge effects using automatic differentiation

    International Nuclear Information System (INIS)

    Reusch, M.F.; Bruhwiler, D.L.; Computer Accelerator Physics Conference Williamsburg, Virginia 1996)

    1997-01-01

    The Northrop Grumman Topkark code has been upgraded to Fortran 90, making use of operator overloading, so the same code can be used to either track an array of particles or construct a Taylor map representation of the accelerator lattice. We review beam optics and beam dynamics simulations conducted with TOPKARK in the past and we present a new method for modeling space charge forces to high-order with automatic differentiation. This method generates an accurate, high-order, 6-D Taylor map of the phase space variable trajectories for a bunched, high-current beam. The spatial distribution is modeled as the product of a Taylor Series times a Gaussian. The variables in the argument of the Gaussian are normalized to the respective second moments of the distribution. This form allows for accurate representation of a wide range of realistic distributions, including any asymmetries, and allows for rapid calculation of the space charge fields with free space boundary conditions. An example problem is presented to illustrate our approach. copyright 1997 American Institute of Physics

  3. Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

    Science.gov (United States)

    Schoeche, Stefan

    The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

  4. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  5. Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

    KAUST Repository

    Li, Yuan

    2014-12-03

    We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

  6. Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

    KAUST Repository

    Li, Yuan; Yi, Yuanping; Coropceanu, Veaceslav; Bredas, Jean-Luc

    2014-01-01

    We present a multiscale modeling of the infrared optical properties of the rubrene crystal. The results are in very good agreement with the experimental data that point to nonmonotonic features in the optical conductivity spectrum and small optical effective masses. We find that, in the static-disorder approximation, the nonlocal electron-phonon interactions stemming from low-frequency lattice vibrations can decrease the optical effective masses and lead to lighter quasiparticles. On the other hand, the charge-transport and infrared optical properties of the rubrene crystal at room temperature are demonstrated to be governed by localized carriers driven by inherent thermal disorders. Our findings underline that the presence of apparently light carriers in high-mobility organic semiconductors does not necessarily imply bandlike transport.

  7. Electromagnetic Charge Radius of the Pion at High Precision

    Science.gov (United States)

    Ananthanarayan, B.; Caprini, Irinel; Das, Diganta

    2017-09-01

    We present a determination of the pion charge radius from high precision data on the pion vector form factor from both timelike and spacelike regions, using a novel formalism based on analyticity and unitarity. At low energies, instead of the poorly known modulus of the form factor, we use its phase, known with high accuracy from Roy equations for π π elastic scattering via the Fermi-Watson theorem. We use also the values of the modulus at several higher timelike energies, where the data from e+e- annihilation and τ decay are mutually consistent, as well as the most recent measurements at spacelike momenta. The experimental uncertainties are implemented by Monte Carlo simulations. The results, which do not rely on a specific parametrization, are optimal for the given input information and do not depend on the unknown phase of the form factor above the first inelastic threshold. Our prediction for the charge radius of the pion is rπ=(0.657 ±0.003 ) fm , which amounts to an increase in precision by a factor of about 2.7 compared to the Particle Data Group average.

  8. Performance of the PHIN High Charge Photo Injector

    CERN Document Server

    Petrarca, M; Doebert, S; Dabrowski, A; Divall, M; Fedoseev, V; Lebas, N; Lefevre, T; Losito, R; Egger, D; Mete, O

    2010-01-01

    The high charge PHIN photo injector is studied at CERN as an electron source for the CLIC Test Facility (CTF3) drive beam as an alternative to the present thermionic gun. The objective of PHIN is to demonstrate the feasibility of a laser-based electron source for CLIC. The photo injector operates with a 2.5 cell, 3 GHz RF gun using a Cs2Te photocathode illuminated by UV laser pulses generated by amplifying and frequency quadrupling the signal from a Nd:YLF oscillator running at 1.5GHz. The challenge is to generate a beam structure of 1908 micro bunches with 2.33nC per micro bunch at 1.5GHz leading to a high integrated train charge of 4446nC and nominal beam energy of 5.5MeV with current stability below 1%. In this paper we report and discuss the time resolved transverse and longitudinal beam parameters measurements. The performance of the photo cathodes made at CERN with a peak quantum efficiency of 18 % is shown as well. Laser pointing and amplitude stability results are discussed taking into account correla...

  9. A charge transfer complex nematic liquid crystalline gel with high electrical conductivity

    International Nuclear Information System (INIS)

    Bhargavi, R.; Nair, Geetha G.; Krishna Prasad, S.; Majumdar, R.; Bag, Braja G.

    2014-01-01

    We describe the rheological, dielectric and elastic properties of a nematic liquid crystal gel created using an anthrylidene derivative of arjunolic acid, a chiral triterpenoid, obtained from the extracts of the wood of Terminalia arjuna. In this novel gel, having the electron-donor and acceptor components as minority constituents, the gelation and strengthening of charge-transfer complex (CTC) formation are seen to be occurring concomitantly. In addition to being mechanically strong with a large storage modulus, the gel with the maximized CTC exhibits Frank bend elastic constant values that approach nanonewton levels. The highlight of the study is the observation of 4–5 orders of magnitude increase in electrical conductivity for this gel, a value that is higher than even in the CT complexes of 2-d ordered columnar structures. A further important advantage of the present system over the columnar complex is that the high conductivity is seen for ac probing also, and owing to the nematic nature can be switched between its anisotropic limits. Some of these features are ascribed to a specific molecular packing architecture, which reduces the trapping of the charge carriers.

  10. A charge transfer complex nematic liquid crystalline gel with high electrical conductivity

    Science.gov (United States)

    Bhargavi, R.; Nair, Geetha G.; Krishna Prasad, S.; Majumdar, R.; Bag, Braja G.

    2014-10-01

    We describe the rheological, dielectric and elastic properties of a nematic liquid crystal gel created using an anthrylidene derivative of arjunolic acid, a chiral triterpenoid, obtained from the extracts of the wood of Terminalia arjuna. In this novel gel, having the electron-donor and acceptor components as minority constituents, the gelation and strengthening of charge-transfer complex (CTC) formation are seen to be occurring concomitantly. In addition to being mechanically strong with a large storage modulus, the gel with the maximized CTC exhibits Frank bend elastic constant values that approach nanonewton levels. The highlight of the study is the observation of 4-5 orders of magnitude increase in electrical conductivity for this gel, a value that is higher than even in the CT complexes of 2-d ordered columnar structures. A further important advantage of the present system over the columnar complex is that the high conductivity is seen for ac probing also, and owing to the nematic nature can be switched between its anisotropic limits. Some of these features are ascribed to a specific molecular packing architecture, which reduces the trapping of the charge carriers.

  11. Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

    Science.gov (United States)

    Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

    2017-08-01

    The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

  12. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    Science.gov (United States)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  13. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  14. Modulated phase matching and high-order harmonic enhancement mediated by the carrier-envelope phase

    International Nuclear Information System (INIS)

    Faccio, Daniele; Serrat, Carles; Cela, Jose M.; Farres, Albert; Di Trapani, Paolo; Biegert, Jens

    2010-01-01

    The process of high-order harmonic generation in gases is numerically investigated in the presence of a few-cycle pulsed-Bessel-beam pump, featuring a periodic modulation in the peak intensity due to large carrier-envelope-phase mismatch. A two-decade enhancement in the conversion efficiency is observed and interpreted as the consequence of a mechanism known as a nonlinearly induced modulation in the phase mismatch.

  15. The mitochondrial pyruvate carrier mediates high fat diet-induced increases in hepatic TCA cycle capacity

    OpenAIRE

    Rauckhorst, Adam J.; Gray, Lawrence R.; Sheldon, Ryan D.; Fu, Xiaorong; Pewa, Alvin D.; Feddersen, Charlotte R.; Dupuy, Adam J.; Gibson-Corley, Katherine N.; Cox, James E.; Burgess, Shawn C.; Taylor, Eric B.

    2017-01-01

    Objective: Excessive hepatic gluconeogenesis is a defining feature of type 2 diabetes (T2D). Most gluconeogenic flux is routed through mitochondria. The mitochondrial pyruvate carrier (MPC) transports pyruvate from the cytosol into the mitochondrial matrix, thereby gating pyruvate-driven gluconeogenesis. Disruption of the hepatocyte MPC attenuates hyperglycemia in mice during high fat diet (HFD)-induced obesity but exerts minimal effects on glycemia in normal chow diet (NCD)-fed conditions. T...

  16. Damage induced by high energy multiply charged oxygen ions in oxide coated silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kulkarni, V.R. [Department of Physics, University of Pune, Pune 411 007 (India); Bogle, K.A. [Department of Physics, University of Pune, Pune 411 007 (India); Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India)

    2006-03-15

    P-type oxide coated silicon samples of resistivity 120 {omega} cm were irradiated with 60 MeV oxygen ions of fixed charge states 4{sup +}, 5{sup +}, 6{sup +} and 7{sup +} at an equal fluence of, {phi}, {approx}10{sup 13} ions/cm{sup 2}. The induced damage was estimated by Hall voltage, Hall coefficient, carrier concentration and lifetime of minority carriers. The results indicate that Hall voltage (V {sub H}) and Hall coefficient (R {sub H}) increases, while carrier concentration (n) decreases with the charge state of impinging oxygen ions. The V {sub H} increases from 22 mV to 76.5 mV at typical current of 0.5 mA, R {sub H} from 0.42 x 10{sup 5} cm{sup 3}/C to 2.16 x 10{sup 5} cm{sup 3}/C and n decreases from 9 x 10{sup 13} cm{sup -3} to 2.88 x 10{sup 13} cm{sup -3} for the different charge states. This fact is an evidence that the oxygen ions with an individual fixed charge state passing through very thin 40 A layer of silicon dioxide, induces significant damage at the SiO{sub 2}-Si interface through the mechanism of electronic stopping power. The lifetime of minority charge carriers, {tau} (bulk property), remains constant at around 6 {mu}s for all the charge states of the 60 MeV energy oxygen ion irradiated samples at a constant fluence of, {phi}, 10{sup 13} ions/cm{sup 2}.

  17. Low-voltage and high-efficiency white organic light emitting devices with carrier balance

    International Nuclear Information System (INIS)

    Wei Fuxiang; Huang, Y.; Fang, L.

    2010-01-01

    White organic light emitting devices with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al have been demonstrated in this paper. High-mobility m-MTDATA:4F-TCNQ is added into the region between ITO and NBP to increase hole injection and transport. The high-mobility Bphen:Liq layer is added into the region between cathode and emission layers to lower cathode barrier and facilitate carrier injection. In the meanwhile, an effective carrier balance (number of holes is equal to number of electrons) between holes and electrons is considered to be one of the most important factors for improving OLEDs. During the experiment, by modulating the doping concentration of 4F-TCNQ, we can control hole injection and transport to make the carriers reach a high-level balance. The maximum current efficiency and power efficiency of devices were 9.3 cd/A and 4.6 lm/A, respectively.

  18. Space-charge effects in high-energy photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Verna, Adriano, E-mail: adriano.verna@uniroma3.it [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); CNISM Unità di Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Greco, Giorgia [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Scuola Dottorale in Matematica e Fisica, Università Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Offi, Francesco; Stefani, Giovanni [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); CNISM Unità di Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy)

    2016-05-15

    Highlights: • N-body simulations of interacting photoelectrons in hard X-ray experiments. • Secondary electrons have a pivotal role in determining the energy broadening. • Space charge has negligible effects on the photoelectron momentum distribution. • A simple model provides the characteristic time for energy-broadening mechanism. • The feasibility of time-resolved high-energy experiments with FELs is discussed. - Abstract: Pump-and-probe photoelectron spectroscopy (PES) with femtosecond pulsed sources opens new perspectives in the investigation of the ultrafast dynamics of physical and chemical processes at the surfaces and interfaces of solids. Nevertheless, for very intense photon pulses a large number of photoelectrons are simultaneously emitted and their mutual Coulomb repulsion is sufficiently strong to significantly modify their trajectory and kinetic energy. This phenomenon, referred as space-charge effect, determines a broadening and shift in energy for the typical PES structures and a dramatic loss of energy resolution. In this article we examine the effects of space charge in PES with a particular focus on time-resolved hard X-ray (∼10 keV) experiments. The trajectory of the electrons photoemitted from pure Cu in a hard X-ray PES experiment has been reproduced through N-body simulations and the broadening of the photoemission core-level peaks has been monitored as a function of various parameters (photons per pulse, linear dimension of the photon spot, photon energy). The energy broadening results directly proportional to the number N of electrons emitted per pulse (mainly represented by secondary electrons) and inversely proportional to the linear dimension a of the photon spot on the sample surface, in agreement with the literature data about ultraviolet and soft X-ray experiments. The evolution in time of the energy broadening during the flight of the photoelectrons is also studied. Despite its detrimental consequences on the energy

  19. A modified space charge routine for high intensity bunched beams

    International Nuclear Information System (INIS)

    Lapostolle, P.; Garnett, R.W.; Wangler, T.P.

    1996-01-01

    In 1991 a space charge calculation for bunched beam with a three-dimensional ellipsoid was proposed, replacing the usual SCHEFF routines. It removes the cylindrical symmetry required in SCHEFF and avoids the point to point interaction computation, whose number of simulation points is limited. This routine has now been improved with the introduction of two or three ellipsoids giving a good representation of the complex non-symmetrical form of the bunch (unlike the 3-d ellipsoidal assumption). The ellipsoidal density distributions are computed with a new method, avoiding the difficulty encountered near the centre (the axis in 2-d problems) by the previous method. It also provides a check of the ellipsoidal symmetry for each part of the distribution. Finally, the Fourier analysis reported in 1991 has been replaced by a very convenient Hermite expansion, which gives a simple but accurate representation of practical distributions. Comparisons with other space charge routines have been made, particularly with the ones applying other techniques such as SCHEFF. Introduced in the versatile beam dynamics code DYNAC, it should provide a good tool for the study of the various parameters responsible for the halo formation in high intensity linacs. (orig.)

  20. Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

    Science.gov (United States)

    Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

    2018-04-01

    It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

  1. Experimental investigation on the use of highly charged nanoparticles to improve the stability of weakly charged colloidal system.

    Science.gov (United States)

    Zubir, Mohd Nashrul Mohd; Badarudin, A; Kazi, S N; Misran, Misni; Amiri, Ahmad; Sadri, Rad; Khalid, Solangi

    2015-09-15

    The present work highlighted on the implementation of a unique concept for stabilizing colloids at their incipiently low charge potential. A highly charged nanoparticle was introduced within a coagulated prone colloidal system, serving as stabilizer to resist otherwise rapid flocculation and sedimentation process. A low size asymmetry of nanoparticle/colloid serves as the new topic of investigation in addition to the well-established large size ratio nanoparticle/microparticle study. Highly charged Al2O3 nanoparticles were used within the present research context to stabilize TiO2 and Fe3O4 based colloids via the formation of composite structures. It was believed, based on the experimental evidence, that Al2O3 nanoparticle interact with the weakly charged TiO2 and Fe3O4 colloids within the binary system via absorption and/or haloing modes to increase the overall charge potential of the respective colloids, thus preventing further surface contact via van der Waal's attraction. Series of experimental results strongly suggest the presence of weakly charged colloids in the studied bimodal system where, in the absence of highly charged nanoparticle, experience rapid instability. Absorbance measurement indicated that the colloidal stability drops in accordance to the highly charged nanoparticle sedimentation rate, suggesting the dominant influence of nanoparticles to attain a well-dispersed binary system. Further, it was found that the level of colloidal stability was enhanced with increasing nanoparticle fraction within the mixture. Rheological observation revealed that each hybrid complexes demonstrated behavior reminiscence to water with negligible increase in viscosity which serves as highly favorable condition particularly in thermal transport applications. Copyright © 2015 Elsevier Inc. All rights reserved.

  2. Femtosecond pump-probe studies of phonons and carriers in bismuth under high pressure

    International Nuclear Information System (INIS)

    Kasami, M.; Ogino, T.; Mishina, T.; Yamamoto, S.; Nakahara, J.

    2006-01-01

    We investigate the high-pressure phase of Bi under hydrostatic pressure using pump-probe spectroscopy at pressures up to 3.0 GPa, and we observe coherent phonons signal and relaxation signal of photo-excited carriers at Bi(II) and Bi(III) phases. The pressure dependence of the coherent phonons shows that the amplitude of coherent phonons is extremely small and the frequency of coherent phonons changes at high-pressure phases. As results from our experiment, we obtain its frequencies are 2.5 and 2.2 THz at Bi(II) and Bi(III), respectively. Furthermore, photo-excited carrier relaxation indicates drastic changes near 2.5 GPa. Bismuth transforms from semimetal to semiconductor near 2.5 GPa, and band-overlapping between at L-point and at T-point disappears. We consider that the drastic changes of the photo-excited carrier relaxation are strongly correlated with the band-overlapping disappearing

  3. Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

    International Nuclear Information System (INIS)

    Cho, H Y; Kwon, Y K; Lee, C S; Lee, J H; Moon, J Y

    2011-01-01

    In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /Vc s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) x 10 -3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) x 10 -4 cm 2 /V.

  4. Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base

    International Nuclear Information System (INIS)

    Huang, Jinying; Ma, Dongge; Hümmelgen, Ivo A

    2013-01-01

    We report hybrid vertical architecture p-type transistors with poly(N-vinylcarbazole) as the emitter, p-type silicon as the collector and Al:Ca alloy layer as the base. The investigation of the common-base and common-emitter characteristics clearly demonstrates that the devices operate as permeable-base transistors (PBTs). The PBTs show common-base current gain α of 0.98 at −V BC = 1.5 V and common-emitter gain β of over 100. Atomic force microscope images of the base layer show an uneven surface, showing that the annealing does not dissolve the charge trap states but offers ‘pinholes’ for the oxidation in-depth even through the whole base layer. In this case, the charge carriers must tunnel the thin oxidized layer, and then are collected. It is clearly seen that there exists a barrier against holes injection from the base to the collector semiconductor at the interface, and the further oxidation caused by exposing the devices in air changes the operational mode of the resulting devices from the PBT to the metal-base transistor. (paper)

  5. Highly charged ion based time-of-flight emission microscope

    International Nuclear Information System (INIS)

    Hamza, Alex V.; Barnes, Alan V.; Magee, Ed; Newman, Mike; Schenkel, Thomas; McDonald, Joseph W.; Schneider, Dieter H.

    2000-01-01

    An emission microscope using highly charged ions as the excitation source has been designed, constructed, and operated. A novel ''acorn'' objective lens has been used to simultaneously image electron and secondary ion emission. A resistive anode-position sensitive detector is used to determine the x-y position and time of arrival of the secondary events at the microscope image plane. Contrast in the image can be based on the intensity of the electron emission and/or the presence of particular secondary ions. Spatial resolution of better than 1 μm and mass resolution m/Δm of better than 400 were demonstrated. Background rejection from uncorrelated events of greater than an order of magnitude is also achieved. (c) 2000 American Institute of Physics

  6. Nonlinear energy loss of highly charged heavy ions

    International Nuclear Information System (INIS)

    Zwicknagel, G.Guenter.

    2000-01-01

    For slow, highly charged heavy ions strong coupling effects in the energy transfer from the projectile-ion to an electron target plasma become important. A theoretical description of this nonlinear ion stopping has to go beyond the standard approaches like the dielectric linear response or the binary collision model which are strictly valid only at weak ion-target coupling. Here we outline an improved treatment which is based on a suitable combination of binary collision and linear response contributions. As has been verified for isotropic, nonmagnetized electron plasmas by comparison with simulations, this approach well reproduces the essential features of nonlinear stopping up to moderate coupling strength. Its extension to anisotropic, magnetized electron plasmas basically involves the fully numerical determination of the momentum and energy transfer in binary ion-electron collisions in the presence of a magnetic field. First results of such calculations are presented and discussed

  7. Highly charged ions at rest: The HITRAP project at GSI

    International Nuclear Information System (INIS)

    Herfurth, F.; Beier, T.; Dahl, L.; Eliseev, S.; Heinz, S.; Kester, O.; Kluge, H.-J.; Kozhuharov, C.; Maero, G.; Quint, W.

    2005-01-01

    A decelerator will be installed at GSI in order to provide and study bare heavy nuclei or heavy nuclei with only few electrons at very low energies or even at rest. Highly-charged ions will be produced by stripping at relativistic energies. After electron cooling and deceleration in the Experimental Storage Ring the ions are ejected out of the storage ring at 4 MeV/u and further decelerated in a combination of an IH and RFQ structure. Finally, they are injected into a Penning trap where the ions are cooled to 4 K. From here, the ions can be transferred in a quasi dc or in a pulsed mode to different experimental setups. This article describes the technical concepts of this project as well as planned key experiments

  8. High cumulants of conserved charges and their statistical uncertainties

    Science.gov (United States)

    Li-Zhu, Chen; Ye-Yin, Zhao; Xue, Pan; Zhi-Ming, Li; Yuan-Fang, Wu

    2017-10-01

    We study the influence of measured high cumulants of conserved charges on their associated statistical uncertainties in relativistic heavy-ion collisions. With a given number of events, the measured cumulants randomly fluctuate with an approximately normal distribution, while the estimated statistical uncertainties are found to be correlated with corresponding values of the obtained cumulants. Generally, with a given number of events, the larger the cumulants we measure, the larger the statistical uncertainties that are estimated. The error-weighted averaged cumulants are dependent on statistics. Despite this effect, however, it is found that the three sigma rule of thumb is still applicable when the statistics are above one million. Supported by NSFC (11405088, 11521064, 11647093), Major State Basic Research Development Program of China (2014CB845402) and Ministry of Science and Technology (MoST) (2016YFE0104800)

  9. X-ray radiography with highly charged ions

    Science.gov (United States)

    Marrs, Roscoe E.

    2000-01-01

    An extremely small (1-250 micron FWHM) beam of slow highly charged ions deexciting on an x-ray production target generates x-ray monochromatic radiation that is passed through a specimen and detected for imaging. The resolution of the x-ray radiograms is improved and such detection is achieved with relatively low dosages of radiation passing through the specimen. An apparatus containing an electron beam ion trap (and modifications thereof) equipped with a focusing column serves as a source of ions that generate radiation projected onto an image detector. Electronic and other detectors are able to detect an increased amount of radiation per pixel than achieved by previous methods and apparati.

  10. Charge Exchange of Highly Charged Ne and Mg Ions with H and He

    Science.gov (United States)

    Lyons, D.; Cumbee, R. S.; Stancil, P. C.

    2017-10-01

    Cross sections for single electron capture (SEC), or charge exchange (CX), in collisions of Ne(8-10)+ and Mg(8-12)+ with H and He, are computed using an approximate multichannel Landau-Zener (MCLZ) formalism. Final-state-resolved cross sections for the principal (n), orbital angular momentum (ℓ), and where appropriate, total spin angular momentum (S) quantum numbers are explicitly computed, except for the incident bare ions Ne10+ and Mg12+. In the latter two cases, n{\\ell }-resolution is obtained from analytical ℓ-distribution functions applied to n-resolved MCLZ cross sections. In all cases, the cross sections are computed over the collision energy range 1 meV/u to 50 keV/u with LZ parameters estimated from atomic energies obtained from experiment, theory, or, in the case of high-lying Rydberg levels, estimated with a quantum defect approach. Errors in the energy differences in the adiabatic potentials at the avoided crossing distances give the largest contribution to the uncertainties in the cross sections, which are expected to increase with decreasing cross section magnitude. The energy differences are deduced here with the Olson-Salop-Tauljberg radial coupling model. Proper selection of an ℓ-distribution function for bare ion collisions introduces another level of uncertainty into the results. Comparison is made to existing experimental or theoretical results when available, but such data are absent for most considered collision systems. The n{\\ell }S-resolved SEC cross sections are used in an optically thin cascade simulation to predict X-ray spectra and line ratios that will aid in modeling the X-ray emission in environments where CX is an important mechanism. Details on a MCLZ computational package, Stueckelberg, are also provided.

  11. On adiabatic pair potentials of highly charged colloid particles

    Science.gov (United States)

    Sogami, Ikuo S.

    2018-03-01

    Generalizing the Debye-Hückel formalism, we develop a new mean field theory for adiabatic pair potentials of highly charged particles in colloid dispersions. The unoccupied volume and the osmotic pressure are the key concepts to describe the chemical and thermodynamical equilibrium of the gas of small ions in the outside region of all of the colloid particles. To define the proper thermodynamic quantities, it is postulated to take an ensemble averaging with respect to the particle configurations in the integrals for their densities consisting of the electric potential satisfying a set of equations that are derived by linearizing the Poisson-Boltzmann equation. With the Fourier integral representation of the electric potential, we calculate first the internal electric energy of the system from which the Helmholtz free energy is obtained through the Legendre transformation. Then, the Gibbs free energy is calculated using both ways of the Legendre transformation with respect to the unoccupied volume and the summation of chemical potentials. The thermodynamic functions provide three types of pair potentials, all of which are inversely proportional to the fraction of the unoccupied volume. At the limit when the fraction factor reduces to unity, the Helmholtz pair potential turns exactly into the well known Derjaguin-Landau-Verwey-Overbeek repulsive potential. The Gibbs pair potential possessing a medium-range strong repulsive part and a long-range weak attractive tail can explain the Schulze-Hardy rule for coagulation in combination with the van der Waals-London potential and describes a rich variety of phenomena of phase transitions observed in the dilute dispersions of highly charged particles.

  12. High ion charge states in a high-current, short-pulse, vacuum ARC ion sources

    International Nuclear Information System (INIS)

    Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

    1996-01-01

    Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1-4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several μs) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution

  13. High ion charge states in a high-current, short-pulse, vacuum arc ion source

    International Nuclear Information System (INIS)

    Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

    1995-09-01

    Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1--4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several micros) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution

  14. Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

    Science.gov (United States)

    Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

    2018-05-01

    One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

  15. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  16. A simple approach for producing highly efficient DNA carriers with reduced toxicity based on modified polyallylamine

    Energy Technology Data Exchange (ETDEWEB)

    Oskuee, Reza Kazemi [Neurogenic Inflammation Research Center, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Department of Medical Biotechnology, School of Medicine, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Dosti, Fatemeh [School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Gholami, Leila [Targeted Drug Delivery Research Center, School of Medicine, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Malaekeh-Nikouei, Bizhan, E-mail: malaekehb@mums.ac.ir [Nanotechnology Research Center, School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of)

    2015-04-01

    Nowadays gene delivery is a topic in many research studies. Non-viral vectors have many advantages over viral vectors in terms of safety, immunogenicity and gene carrying capacity but they suffer from low transfection efficiency and high toxicity. In this study, polyallylamine (PAA), the cationic polymer, has been modified with hydrophobic branches to increase the transfection efficiency of the polymer. Polyallylamine with molecular weights of 15 and 65 kDa was selected and grafted with butyl, hexyl and decyl acrylate at percentages of 10, 30 and 50. The ability of the modified polymer to condense DNA was examined by ethidium bromide test. The complex of modified polymer and DNA (polyplex) was characterized for size, zeta potential, transfection efficiency and cytotoxicity in Neuro2A cell lines. The results of ethidium bromide test showed that grafting of PAA decreased its ability for DNA condensation but vectors could still condense DNA at moderate and high carrier to DNA ratios. Most of polyplexes had particle size between 150 and 250 nm. The prepared vectors mainly showed positive zeta potential but carriers composed of PAA with high percentage of grafting had negative zeta potential. The best transfection activity was observed in vectors with hexyl acrylate chain. Grafting of polymer reduced its cytotoxicity especially at percentages of 30 and 50. The vectors based of PAA 15 kDa had better transfection efficiency than the vectors made of PAA 65 kDa. In conclusion, results of the present study indicated that grafting PAA 15 kDa with high percentages of hexyl acrylate can help to prepare vectors with better transfection efficiency and less cytotoxicity. - Highlights: • The modified polyallylamine was synthesized as a gene carrier. • Modification of polyallylamine (15 kDa) with high percentages of hexyl acrylate improved transfection activity remarkably. • Grafting of polymer with acrylate derivatives reduced polymer cytotoxicity especially at percentages of

  17. High-resolution x-ray scattering studies of charge ordering in highly correlated electron systems

    International Nuclear Information System (INIS)

    Ghazi, M.E.

    2002-01-01

    Many important properties of transition metal oxides such as, copper oxide high-temperature superconductivity and colossal magnetoresistance (CMR) in manganites are due to strong electron-electron interactions, and hence these systems are called highly correlated systems. These materials are characterised by the coexistence of different kinds of order, including charge, orbital, and magnetic moment. This thesis contains high-resolution X-ray scattering studies of charge ordering in such systems namely the high-T C copper oxides isostructural system, La 2-x Sr x NiO 4 with various Sr concentrations (x = 0.33 - 0.2), and the CMR manganite system, Nd 1/2 Sr 1/2 MnO 3 . It also includes a review of charge ordering in a large variety of transition metal oxides, such as ferrates, vanadates, cobaltates, nickelates, manganites, and cuprates systems, which have been reported to date in the scientific literature. Using high-resolution synchrotron X-ray scattering, it has been demonstrated that the charge stripes exist in a series of single crystals of La 2-x Sr x NiO 4 with Sr concentrations (x = 0.33 - 0.2) at low temperatures. Satellite reflections due to the charge ordering were found with the wavevector (2ε, 0, 1) below the charge ordering transition temperature, T CO , where 2ε is the amount of separation from the corresponding Bragg peak. The charge stripes are shown to be two-dimensional in nature both by measurements of their correlation lengths and by measurement of the critical exponents of the charge stripe melting transition with an anomaly at x = 0.25. The results show by decreasing the hole concentration from the x = 0.33 to 0.2, the well-correlated charge stripes change to a glassy state at x = 0.25. The electronic transition into the charge stripe phase is second-order without any corresponding structural transition. Above the second-order transition critical scattering was observed due to fluctuations into the charge stripe phase. In a single-crystal of Nd

  18. Charge state distributions from highly charged ions channeled at a metal surface

    International Nuclear Information System (INIS)

    Folkerts, L.; Meyer, F.W.; Schippers, S.

    1994-01-01

    The vast majority of the experimental work in the field of multicharged ion-surface interactions, to date, has focused on x-ray and particularly on electron emission. These experiments include measurements of the total electron yield, the emission statistics of the electrons, and, most of all, the electron energy distributions. So far, little attention has been paid to the fate of the multicharged projectile ions after the scattering. To our knowledge, the only measurement of the charge state distribution of the scattered ions is the pioneering experiment of de Zwart et al., who measured the total yield of scattered 1+, 2+, and 3+ ions as a function of the primary charge state q (q = 1--11) for 20 key Ne, Ar, and Kr ions after reflection from a polycrystalline tungsten target. Their main finding is the sudden onset of scattered 3+ ions when inner-shell vacancies are present in the primary particles. This suggests that a certain fraction of the inner-shell vacancies survives the entire collision event, and decays via autoionization on the outgoing path. Since the projectiles scattered in the neutral charge state could not be detected in the experiment of de Zwart et al., they were not able to provide absolute charge state fractions. In our present experiment, we focus on the scattered projectiles, measuring both the final charge state and the total scattering angle with a single 2D position sensitive detector (PSD). This method gives us the number of positive, as well as neutral and negative, scattered ions, thus allowing us to extract absolute charge state fractions. Using a well-prepared single Au(110) crystal and a grazing incidence geometry, we were able to observe surface channeling along the [001] channels

  19. A novel research approach on the dynamic properties of photogenerated charge carriers at Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films by a frequency-modulated surface photovoltage technology

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Zhang, Wei [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China); Xie, Tengfeng; Wang, Dejun [College of Chemistry, Jilin University, Changchun 130012 (China); Song, Xi-Ming, E-mail: songlab@lnu.edu.cn [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China)

    2013-09-01

    Graphical abstract: The changed SPV with chopping frequencies indicate the separation speeds of photogenerated charge carriers in different films. - Highlights: • Ag{sub 2}S-sensitized TiO{sub 2} films show good photoelectric responses in visible-light region. • Frequency-modulated SPV give dynamic information and evidence of Ag{sub 2}S QDSSCs’ performance. • Frequency-modulated SPV can supply complementary information in the study of Ag{sub 2}S ODSSCs. - Abstract: Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films with different amount of Ag{sub 2}S were fabricated by a successive ionic layer adsorption and reaction (SILAR) method. The separation and transport of photogenerated charge carriers at different spectral regions were studied by the frequency-modulated surface photovoltage technology. Some novel dynamic information of photogenerated charge carriers in a wide spectral range is found. The results indicate that the rate and direction of separation (diffusion) for photogenerated charge carriers are closely related to the performance of quantum-dots-sensitized solar cells (QDSSCs) based on the Ag{sub 2}S/TiO{sub 2} nano-structure.

  20. On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Emelianov, A. V., E-mail: emmsowton@gmail.com; Romashkin, A. V.; Tsarik, K. A. [National Research University of Electronic Technology (MIET) (Russian Federation); Nasibulin, A. G. [Skolkovo Institute of Science and Technology (Russian Federation); Nevolin, V. K.; Bobrinetskiy, I. I. [National Research University of Electronic Technology (MIET) (Russian Federation)

    2017-04-15

    This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga{sup +} ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm{sup 2}/(V s) at an on/off current ratio of 5 × 10{sup 2}.

  1. STM and transport measurements of highly charged ion modified materials

    International Nuclear Information System (INIS)

    Pomeroy, J.M.; Grube, H.; Perrella, A.C.; Gillaspy, J.D.

    2007-01-01

    Careful measurements of highly charged ions (HCIs) colliding with gases and surfaces have provided glimpses of intense electronic interactions, but a comprehensive model for the interaction mechanisms, time scales, and resultant nano-features that bridges materials systems is yet to be realized. At the National Institute of Standards and Technology (NIST) electron beam ion trap (EBIT) facility, new apparatus is now connected to the HCI beamline to allow preparation of clean, atomically flat surfaces of single crystals, e.g. gold, tungsten and silicon, and deposition and patterning of thin films, e.g. high resistivity oxides, ferromagnetic metals, normal metals and superconductors. Experiments reported here focus on the electronic and morphological structure of HCI induced nano-features. Current activities are focused on using in situ scanning tunneling microscope (STM) on Au(1 1 1) and (separately) ex situ transport measurements to study electronic properties within HCI modified magnetic multilayer systems. Specifically, we are fabricating magnetic multilayers similar to magnetic tunnel junctions (MTJs) (important in advanced magnetic field sensors and superconducting Josephson junction devices) and using HCIs to adjust critical electronic properties. The electrical response of the tunnel junction to HCIs provides a novel approach to performing HCI-induced nanostructure ensemble measurements

  2. Cold highly charged ions in a cryogenic Paul trap

    Energy Technology Data Exchange (ETDEWEB)

    Versolato, O. O., E-mail: oscar.versolato@mpi-hd.mpg.de; Schwarz, M.; Windberger, A.; Ullrich, J. [Max-Planck-Institut fuer Kernphysik (Germany); Schmidt, P. O. [Physikalisch-Technische Bundesanstalt (Germany); Drewsen, M. [University of Aarhus, Department of Physics and Astronomy (Denmark); Crespo Lopez-Urrutia, J. R. [Max-Planck-Institut fuer Kernphysik (Germany)

    2013-03-15

    Narrow optical transitions in highly charged ions (HCIs) are of particular interest for metrology and fundamental physics, exploiting the high sensitivity of HCIs to new physics. The highest sensitivity for a changing fine structure constant ever predicted for a stable atomic system is found in Ir{sup 17 + }. However, laser spectroscopy of HCIs is hindered by the large ({approx} 10{sup 6} K) temperatures at which they are produced and trapped. An unprecedented improvement in such laser spectroscopy can be obtained when HCIs are cooled down to the mK range in a linear Paul trap. We have developed a cryogenic linear Paul trap in which HCIs will be sympathetically cooled by {sup 9}Be{sup + } ions. Optimized optical access for laser light is provided while maintaining excellent UHV conditions. The Paul trap will be connected to an electron beam ion trap (EBIT) which is able to produce a wide range of HCIs. This EBIT will also provide the first experimental input needed for the determination of the transition energies in Ir{sup 17 + }, enabling further laser-spectroscopic investigations of this promising HCI.

  3. Excitation and ionization of highly charged ions by electron impact

    International Nuclear Information System (INIS)

    Sampson, D.H.

    1989-01-01

    Two approaches for very rapid calculation of atomic data for high temperature plasma modeling have been developed. The first uses hydrogenic basis states and has been developed and applied in many papers discussed in previous progress reports. Hence, it is only briefly discussed here. The second is a very rapid, yet accurate, fully relativistic approach that has been developed over the past two or three years. It is described in more detail. Recently it has been applied to large scale production of atomic data. Specifically, it has been used to calculate relativistic distorted wave collision strengths and oscillator strengths for the following: all transitions from the ground level to the n=3 and 4 excited levels in the 71 Neon-like ions with nuclear charge number Z in the range 22 ≤ Z ≤ 92; all transitions among the 2s 1/2 , 2p 1/2 and 2p 3/2 levels and from them to all nlj levels with n=3,4 and 5 in the 85 Li-like ions with 8 ≤ Z ≤ 92; all transitions among the 3s 1/2 , 3p 3/2 , 3d 3/2 and 3d 5/2 levels and from them to all nlj levels with n=4 and 5 in the 71 Na-like ions with 22 ≤ Z ≤ 92; and all transitions among 4s 1/2 , 4p 1/2 , 4p 3/2 , 4d 3/2 , 4d 5/2 , 4f 5/2 and 4f 7/2 levels and from them to all nlj levels with n=5 in the 33 Cu-like ions with 60 ≤ Z ≤ 92. Also the program has been extended to give cross-sections for excitation to specific magnetic sublevels of the target ion by an electron beam and very recently it has been extended to give relativistic distorted wave cross sections for ionization of highly charged ions by electron impact

  4. Nodal quasi-particles of the high-Tc superconductors as carriers of heat

    Directory of Open Access Journals (Sweden)

    K. Behnia

    2006-09-01

    Full Text Available   In the quest for understanding correlated electrons, high-temperature superconductivity remains a formidable challenge and a source of insight. This paper briefly recalls the central achievement by the study of heat transport at low temperatures. At very low temperatures, nodal quasi-particles of the d-wave superconducting gap become the main carriers of heat. Their thermal conductivity is unaffected by disorder and reflects the fine structure of the superconducting gap. This finding had led to new openings in the exploration of other unconventional superconductors

  5. Development and comparison of new high-efficiency dry powder inhalers for carrier-free formulations.

    Science.gov (United States)

    Behara, Srinivas R B; Longest, P Worth; Farkas, Dale R; Hindle, Michael

    2014-02-01

    High-efficiency dry powder inhalers (DPIs) were developed and tested for use with carrier-free formulations across a range of different inhalation flow rates. Performance of a previously reported DPI was compared with two new designs in terms of emitted dose (ED) and aerosolization characteristics using in vitro experiments. The two new designs oriented the capsule chamber (CC) at different angles to the main flow passage, which contained a three-dimensional (3D) rod array for aerosol deaggregation. Computational fluid dynamics simulations of a previously developed deaggregation parameter, the nondimensional specific dissipation (NDSD), were used to explain device performance. Orienting the CC at 90° to the mouthpiece, the CC90 -3D inhaler provided the best performance with an ED = 73.4%, fine particle fractions (FPFs) less than 5 and 1 μm of 95.1% and 31.4%, respectively, and a mass median aerodynamic diameter (MMAD) = 1.5 μm. For the carrier-free formulation, deaggregation was primarily influenced by capsule aperture position and the NDSD parameter. The new CC-3D inhalers reduced the percent difference in FPF and MMAD between low and high flows by 1-2 orders of magnitude compared with current commercial devices. In conclusion, the new CC-3D inhalers produced extremely high-quality aerosols with little sensitivity to flow rate and are expected to deliver approximately 95% of the ED to the lungs. © 2013 Wiley Periodicals, Inc. and the American Pharmacists Association.

  6. Equilibrium charge state distributions of high energy heavy ions

    International Nuclear Information System (INIS)

    Clark, R.B.; Grant, I.S.; King, R.; Eastham, D.A.; Joy, T.

    1976-01-01

    Equilibrium charge state fractions have been measured for N, O, Ne, S, Ar and Kr ions at 1.04 MeV/nucleon after passing through various stripping materials. Further data were obtained at higher energy for S ions (4.12 MeV/nucleon) and Ar ions (4.12 and 9.6 MeV/nucleon). The mean charge fractions can be fitted to universal curves for both solid and gaseous strippers. Measurements of the equilibrium fraction of krypton ions at 1.04 MeV/nucleon passing through heavy vapours have shown that a higher average charge state is obtained than for lighter gaseous strippers. (Auth.)

  7. Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

    Science.gov (United States)

    Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

    2015-06-03

    Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Nanoliposomal carriers for improvement the bioavailability of high - valued phenolic compounds of pistachio green hull extract.

    Science.gov (United States)

    Rafiee, Zahra; Barzegar, Mohsen; Sahari, Mohammad Ali; Maherani, Behnoush

    2017-04-01

    In present study, nanoliposomes were prepared by thin hydration method with different concentrations of phenolic compounds (500, 750 and 1000ppm) of pure extract and lecithin (1, 2 and 3%w/w) and characterized by considering the particle size, polydispersity index (PDI), zeta potential, encapsulation efficiency (EE) and morphology. The results showed that nanoliposome (90.39-103.78nm) had negative surface charge varied from -51.5±0.9 to -40.2±0.2mV with a narrow size distribution (PDI≈0.069-0.123). Nanoliposomes composed of 1% lecithin with 1000ppm of phenolic compounds had the highest EE (52.93%). The FTIR analysis indicated the formation of hydrogen bonds between the polar zone of phospholipid and the OH groups of phenolic compounds. Phenolic compounds also increased phase transition temperature (Tc) of nanoliposomes (2.01-7.24°C). Moreover, nanoliposomes had considerable stability during storage. Consequently, liposome is an efficient carrier for protection and improving PGHE biofunctional actives in foodstuffs. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. First principles analysis of the CDW instability of single-layer 1T-TiSe2 and its evolution with charge carrier density

    Science.gov (United States)

    Guster, Bogdan; Canadell, Enric; Pruneda, Miguel; Ordejón, Pablo

    2018-04-01

    We present a density functional theory study of the electronic structure of single-layer TiSe2, and focus on the charge density wave (CDW) instability present on this 2D material. We explain the 2× 2 periodicity of the CDW from the phonon band structure of the undistorted crystal, which is unstable under one of the phonon modes at the M point. This can be understood in terms of a partial band gap opening at the Fermi level, which we describe on the basis of the symmetry of the involved crystal orbitals, leading to an energy gain upon the displacement of the atoms following the phonon mode in a 2  ×  1 structure. Furthermore, the combination of the corresponding phonons for the three inequivalent M points of the Brillouin zone leads to the 2  ×  2 distortion characteristic of the CDW state. This leads to a further opening of a full gap, which reduces the energy of the 2  ×  2 structure compared to the 2  ×  1 one of a single M point phonon, and makes the CDW structure the most stable one. We also analyze the effect of charge injection into the layer on the structural instability. We predict that the 2  ×  2 structure only survives for a certain range of doping levels, both for electrons and for holes, as doping reduces the energy gain due to the gap opening. We predict the transition from the commensurate 2  ×  2 distortion to an incommensurate one with increasing wavelength upon increasing the doping level, followed by the appearance of the undistorted 1  ×  1 structure for larger carrier concentrations.

  10. Two-photon processes in highly charged ions

    International Nuclear Information System (INIS)

    Jahrsetz, Thorsten

    2015-01-01

    Two-photon processes are atomic processes in which an atom interacts simultaneously with two photons. Such processes describe a wide range of phenomena, such as two-photon decay and elastic or inelastic scattering of photons. In recent years two-photon processes involving highly charged heavy ions have become an active area of research. Such studies do not only consider the total transition or scattering rates but also their angular and polarization dependence. To support such examinations in this thesis I present a theoretical framework to describe these properties in all two-photon processes with bound initial and final states and involving heavy H-like or He-like ions. I demonstrate how this framework can be used in some detailed studies of different two-photon processes. Specifically a detailed analysis of two-photon decay of H-like and He-like ions in strong external electromagnetic fields shows the importance of considering the effect of such fields for the physics of such systems. Furthermore I studied the elastic Rayleigh as well as inelastic Raman scattering by heavy H-like ions. I found a number of previously unobserved phenomena in the angular and polarization dependence of the scattering cross-sections that do not only allow to study interesting details of the electronic structure of the ion but might also be useful for the measurement of weak physical effects in such systems.

  11. Quantum interference in laser spectroscopy of highly charged lithiumlike ions

    Science.gov (United States)

    Amaro, Pedro; Loureiro, Ulisses; Safari, Laleh; Fratini, Filippo; Indelicato, Paul; Stöhlker, Thomas; Santos, José Paulo

    2018-02-01

    We investigate the quantum interference induced shifts between energetically close states in highly charged ions, with the energy structure being observed by laser spectroscopy. In this work, we focus on hyperfine states of lithiumlike heavy-Z isotopes and quantify how much quantum interference changes the observed transition frequencies. The process of photon excitation and subsequent photon decay for the transition 2 s →2 p →2 s is implemented with fully relativistic and full-multipole frameworks, which are relevant for such relativistic atomic systems. We consider the isotopes 79+207Pb and 80+209Bi due to experimental interest, as well as other examples of isotopes with lower Z , namely 56+141Pr and 64+165Ho. We conclude that quantum interference can induce shifts up to 11% of the linewidth in the measurable resonances of the considered isotopes, if interference between resonances is neglected. The inclusion of relativity decreases the cross section by 35%, mainly due to the complete retardation form of the electric dipole multipole. However, the contribution of the next higher multipoles (e.g., magnetic quadrupole) to the cross section is negligible. This makes the contribution of relativity and higher-order multipoles to the quantum interference induced shifts a minor effect, even for heavy-Z elements.

  12. Two-photon processes in highly charged ions

    Energy Technology Data Exchange (ETDEWEB)

    Jahrsetz, Thorsten

    2015-03-05

    Two-photon processes are atomic processes in which an atom interacts simultaneously with two photons. Such processes describe a wide range of phenomena, such as two-photon decay and elastic or inelastic scattering of photons. In recent years two-photon processes involving highly charged heavy ions have become an active area of research. Such studies do not only consider the total transition or scattering rates but also their angular and polarization dependence. To support such examinations in this thesis I present a theoretical framework to describe these properties in all two-photon processes with bound initial and final states and involving heavy H-like or He-like ions. I demonstrate how this framework can be used in some detailed studies of different two-photon processes. Specifically a detailed analysis of two-photon decay of H-like and He-like ions in strong external electromagnetic fields shows the importance of considering the effect of such fields for the physics of such systems. Furthermore I studied the elastic Rayleigh as well as inelastic Raman scattering by heavy H-like ions. I found a number of previously unobserved phenomena in the angular and polarization dependence of the scattering cross-sections that do not only allow to study interesting details of the electronic structure of the ion but might also be useful for the measurement of weak physical effects in such systems.

  13. High energy particle detectors utilizing cryogenic charge storage

    Energy Technology Data Exchange (ETDEWEB)

    Coon, D; Engels, E Jr; Plants, D; Shepard, P F; Yang, Y [Pittsburgh Univ., PA (USA); Sopira, M; Papania, R [Westinghouse Research and Development Labs., Monroeville, PA (USA)

    1984-09-15

    The mechanism of cryogenic charge storage as a method of particle detection is reviewed. A description of a simple multielement strip detector operated in this mode is given, and partial results on its operating characteristics presented.

  14. Highly immunogenic and fully synthetic peptide-carrier constructs targetting GnRH

    DEFF Research Database (Denmark)

    Beekman, N.J.C.M.; Schaaper, W.M.M.; Turkstra, J.A.

    1999-01-01

    To use peptides as synthetic vaccines, they have to be coupled to a carrier protein to make them more immunogenic. Coupling efficiency between a carrier protein and a peptide, however, is difficult to control with respect to loading density of the peptide, This makes these carrier proteins poorly...... for the induction of antibodies against GnRH and immunocastration of pigs....

  15. The interactions of high-energy, highly charged Xe ions with buckyballs

    International Nuclear Information System (INIS)

    Ali, R.; Berry, H.G.; Cheng, S.

    1994-01-01

    Ionization and fragmentation have been measured for C 60 molecules bombarded by highly charged (up to 35+) xenon ions with energies ranging up to 625 MeV. The observed mass distribution of positively charged fragments is explained in terms of a theoretical model indicating that the total interaction cross section contains roughly equal contributions from (a) excitation of the giant plasmon resonance, and (b) large-energy-transfer processes that lead to multiple fragmentation of the molecule. Preliminary results of measurements on VUV photons emitted in these interactions are also presented

  16. The study towards high intensity high charge state laser ion sources.

    Science.gov (United States)

    Zhao, H Y; Jin, Q Y; Sha, S; Zhang, J J; Li, Z M; Liu, W; Sun, L T; Zhang, X Z; Zhao, H W

    2014-02-01

    As one of the candidate ion sources for a planned project, the High Intensity heavy-ion Accelerator Facility, a laser ion source has been being intensively studied at the Institute of Modern Physics in the past two years. The charge state distributions of ions produced by irradiating a pulsed 3 J/8 ns Nd:YAG laser on solid targets of a wide range of elements (C, Al, Ti, Ni, Ag, Ta, and Pb) were measured with an electrostatic ion analyzer spectrometer, which indicates that highly charged ions could be generated from low-to-medium mass elements with the present laser system, while the charge state distributions for high mass elements were relatively low. The shot-to-shot stability of ion pulses was monitored with a Faraday cup for carbon target. The fluctuations within ±2.5% for the peak current and total charge and ±6% for pulse duration were demonstrated with the present setup of the laser ion source, the suppression of which is still possible.

  17. Unravelling charge carrier dynamics in protonated g-C3N4 interfaced with carbon nanodots as co-catalysts toward enhanced photocatalytic CO2 reduction: A combined experimental and first-principles DFT study

    Institute of Scientific and Technical Information of China (English)

    Wee-Jun Ong; Lutfi Kurnianditia Putri; Yoong-Chuen Tan; Lling-Lling Tan; Neng Li; Yun Hau Ng; Xiaoming Wen; Siang-Piao Chai

    2017-01-01

    In this work,we demonstrated the successful construction of metal-free zerodimensional/two-dimensional carbon nanodot (CND)-hybridized protonated g-C3N4 (pCN) (CND/pCN) heterojunction photocatalysts by means of electrostatic attraction.We experimentally found that CNDs with an average diameter of 4.4 nm were uniformly distributed on the surface of pCN using electron microscopy analysis.The CND/pCN-3 sample with a CND content of 3 wt.% showed the highest catalytic activity in the CO2 photoreduction process under visible and simulated solar light.Thisprocess results in the evolution of CH4 and CO.The total amounts of CH4 and CO generated by the CND/pCN-3 photocatalyst after 10 h of visible-light activity were found to be 29.23 and 58.82 μmol·gcatalyst-1,respectively.These values were 3.6 and 2.28 times higher,respectively,than the amounts generated when using pCN alone.The corresponding apparent quantum efficiency (AQE) was calculated to be 0.076%.Furthermore,the CND/pCN-3 sample demonstrated high stability and durability after four consecutive photoreaction cycles,with no significant decrease in the catalytic activity.The significant improvement in the photoactivity using CND/pCN-3 was attributed to the synergistic interaction between pCN and CNDs.This synergy allows the effective migration of photoexcited electrons from pCN to CNDs via wellcontacted heterojunction interfaces,which retards the charge recombination.This was confirmed by photoelectrochemical measurements,and steady-state and time-resolved photoluminescence analyses.The first-principles density functional theory (DFT) calculations were consistent with our experimental results,and showed that the work function of CNDs (5.56 eV) was larger than that of pCN (4.66 eV).This suggests that the efficient shuttling of electrons from the conduction band of pCN to CNDs hampers the recombination of electron-hole pairs.This significantly increased the probability of free charge carriers reducing CO2 to CH4

  18. Effects of Confinement on Microstructure and Charge Transport in High Performance Semicrystalline Polymer Semiconductors

    KAUST Repository

    Himmelberger, Scott; Dacuñ a, Javier; Rivnay, Jonathan; Jimison, Leslie H.; McCarthy-Ward, Thomas; Heeney, Martin; McCulloch, Iain; Toney, Michael F.; Salleo, Alberto

    2012-01-01

    The film thickness of one of the most crystalline and highest performing polymer semiconductors, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) (PBTTT), is varied in order to determine the effects of interfaces and confinement on the microstructure and performance in organic field effect transistors (OFETs). Crystalline texture and overall film crystallinity are found to depend strongly on film thickness and thermal processing. The angular distribution of crystallites narrows upon both a decrease in film thickness and thermal annealing. These changes in the film microstructure are paired with thin-film transistor characterization and shown to be directly correlated with variations in charge carrier mobility. Charge transport is shown to be governed by film crystallinity in films below 20 nm and by crystalline orientation for thicker films. An optimal thickness is found for PBTTT at which the mobility is maximized in unannealed films and where mobility reaches a plateau at its highest value for annealed films. The effects of confinement on the morphology and charge transport properties of poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene) (PBTTT) are studied using quantitative X-ray diffraction and field-effect transistor measurements. Polymer crystallinity is found to limit charge transport in the thinnest films while crystalline texture and intergrain connectivity modulate carrier mobility in thicker films. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Effects of Confinement on Microstructure and Charge Transport in High Performance Semicrystalline Polymer Semiconductors

    KAUST Repository

    Himmelberger, Scott

    2012-11-23

    The film thickness of one of the most crystalline and highest performing polymer semiconductors, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) (PBTTT), is varied in order to determine the effects of interfaces and confinement on the microstructure and performance in organic field effect transistors (OFETs). Crystalline texture and overall film crystallinity are found to depend strongly on film thickness and thermal processing. The angular distribution of crystallites narrows upon both a decrease in film thickness and thermal annealing. These changes in the film microstructure are paired with thin-film transistor characterization and shown to be directly correlated with variations in charge carrier mobility. Charge transport is shown to be governed by film crystallinity in films below 20 nm and by crystalline orientation for thicker films. An optimal thickness is found for PBTTT at which the mobility is maximized in unannealed films and where mobility reaches a plateau at its highest value for annealed films. The effects of confinement on the morphology and charge transport properties of poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene) (PBTTT) are studied using quantitative X-ray diffraction and field-effect transistor measurements. Polymer crystallinity is found to limit charge transport in the thinnest films while crystalline texture and intergrain connectivity modulate carrier mobility in thicker films. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters.

    Science.gov (United States)

    Ni, Chengsheng; Hedley, Gordon; Payne, Julia; Svrcek, Vladimir; McDonald, Calum; Jagadamma, Lethy Krishnan; Edwards, Paul; Martin, Robert; Jain, Gunisha; Carolan, Darragh; Mariotti, Davide; Maguire, Paul; Samuel, Ifor; Irvine, John

    2017-08-01

    A metal-organic hybrid perovskite (CH 3 NH 3 PbI 3 ) with three-dimensional framework of metal-halide octahedra has been reported as a low-cost, solution-processable absorber for a thin-film solar cell with a power-conversion efficiency over 20%. Low-dimensional layered perovskites with metal halide slabs separated by the insulating organic layers are reported to show higher stability, but the efficiencies of the solar cells are limited by the confinement of excitons. In order to explore the confinement and transport of excitons in zero-dimensional metal-organic hybrid materials, a highly orientated film of (CH 3 NH 3 ) 3 Bi 2 I 9 with nanometre-sized core clusters of Bi 2 I 9 3- surrounded by insulating CH 3 NH 3 + was prepared via solution processing. The (CH 3 NH 3 ) 3 Bi 2 I 9 film shows highly anisotropic photoluminescence emission and excitation due to the large proportion of localised excitons coupled with delocalised excitons from intercluster energy transfer. The abrupt increase in photoluminescence quantum yield at excitation energy above twice band gap could indicate a quantum cutting due to the low dimensionality.Understanding the confinement and transport of excitons in low dimensional systems will aid the development of next generation photovoltaics. Via photophysical studies Ni et al. observe 'quantum cutting' in 0D metal-organic hybrid materials based on methylammonium bismuth halide (CH 3 NH 3 )3Bi 2 I 9 .

  1. Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

    Science.gov (United States)

    Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-06-02

    The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells.

  2. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

    Science.gov (United States)

    Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

    2016-02-01

    A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

  3. The character of resonant charge exchange involving highly excited atoms

    International Nuclear Information System (INIS)

    Kosarim, A. V.; Smirnov, B. M.; Capitelli, M.; Laricchiuta, A.

    2012-01-01

    We study the process of resonant charge exchange involving excited helium atoms with the principal quantum number n = 5 colliding with the helium ion in the ground state in the collision energy range from thermal up to 10 eV. This information may be important for the analysis of planet atmospheres containing helium, in particular, for Jupiter’s atmosphere, but our basic interest is the transition from the quantum to classical description of this process, where, due to large cross sections, evaluations of the cross sections are possible. For the chosen process, quantum theory allows determining the cross section as a result of a tunnel electron transition, while classical theory accounts for over-barrier electron transitions. The classical theory additionally requires effective transitions between states with close energies. The analysis of these transitions for helium with n = 5 shows that electron momenta and their projections are mixed for a part of the states, while for other states, the mixing is absent. A simple criterion to separate such states is given. In addition, the main contribution to the cross section of resonant charge exchange follows from tunnel electron transitions. As a result, the quantum theory is better for calculating the cross sections of resonant charge exchange than the classical one and also allows finding the partial cross sections of resonant charge exchange, while the classical approach gives the cross section of resonant charge exchange in a simple manner with the accuracy of 20%.

  4. Highly efficient low color temperature organic LED using blend carrier modulation layer

    Science.gov (United States)

    Hsieh, Yao-Ching; Chen, Szu-Hao; Shen, Shih-Ming; Wang, Ching-Chiun; Chen, Chien-Chih; Jou, Jwo-Huei

    2012-10-01

    Color temperature (CT) of light has great effect on human physiology and psychology, and low CT light, minimizing melatonin suppression and decreasing the risk of breast, colorectal, and prostate cancer. We demonstrates the incorporation of a blend carrier modulation interlayer (CML) between emissive layers to improve the device performance of low CT organic light emitting diodes, which exhibits an external quantum efficiency of 22.7% and 36 lm W-1 (54 cd A-1) with 1880 K at 100 cd m-2, or 20.8% and 29 lm W-1 (50 cd A-1) with 1940 K at 1000 cd m-2. The result shows a CT much lower than that of incandescent bulbs, which is 2500 K with 15 lmW-1 efficiency, and even as low as that of candles, which is 2000 K with 0.1 lmW-1. The high efficiency of the proposed device may be attributed to its CML, which helps effectively distribute the entering carriers into the available recombination zones.

  5. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  6. Carrier dynamics in graphene. Ultrafast many-particle phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Malic, E.; Brem, S.; Jago, R. [Department of Physics, Chalmers University of Technology, Goeteborg (Sweden); Winzer, T.; Wendler, F.; Knorr, A. [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany); Mittendorff, M.; Koenig-Otto, J.C.; Schneider, H.; Helm, M.; Winnerl, S. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Ploetzing, T.; Neumaier, D. [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany)

    2017-11-15

    Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Ultrafast carrier thermalization in lead iodide perovskite probed with two-dimensional electronic spectroscopy.

    Science.gov (United States)

    Richter, Johannes M; Branchi, Federico; Valduga de Almeida Camargo, Franco; Zhao, Baodan; Friend, Richard H; Cerullo, Giulio; Deschler, Felix

    2017-08-29

    In band-like semiconductors, charge carriers form a thermal energy distribution rapidly after optical excitation. In hybrid perovskites, the cooling of such thermal carrier distributions occurs on timescales of about 300 fs via carrier-phonon scattering. However, the initial build-up of the thermal distribution proved difficult to resolve with pump-probe techniques due to the requirement of high resolution, both in time and pump energy. Here, we use two-dimensional electronic spectroscopy with sub-10 fs resolution to directly observe the carrier interactions that lead to a thermal carrier distribution. We find that thermalization occurs dominantly via carrier-carrier scattering under the investigated fluences and report the dependence of carrier scattering rates on excess energy and carrier density. We extract characteristic carrier thermalization times from below 10 to 85 fs. These values allow for mobilities of 500 cm 2  V -1  s -1 at carrier densities lower than 2 × 10 19  cm -3 and limit the time for carrier extraction in hot carrier solar cells.Carrier-carrier scattering rates determine the fundamental limits of carrier transport and electronic coherence. Using two-dimensional electronic spectroscopy with sub-10 fs resolution, Richter and Branchi et al. extract carrier thermalization times of 10 to 85 fs in hybrid perovskites.

  8. A modified space charge routine for high intensity bunched beams

    International Nuclear Information System (INIS)

    Lapostolle, P.; Lombardi, A.M.; Tanke, E.; Valero, S.; Garnett, R.W.; Wangler, T.P.

    1996-01-01

    A new routine and a computer code (DYNAC) for the calculation of space charge densities in a new generation of linear accelerators for various industrial applications is presented. The new beam dynamics method used in this code, employs a set of quasi-Liouvillian equations, allowing beam dynamics computations in long and complex structures for electrons, as well as protons and ions. With this new beam dynamics method, the coordinates of particles are known at any position in the accelerating elements, allowing multistep space charge calculations. (K.A.)

  9. Beamline for low-energy transport of highly charged ions at HITRAP

    International Nuclear Information System (INIS)

    Andelkovic, Z.; Herfurth, F.; Kotovskiy, N.; König, K.; Maaß, B.; Murböck, T.; Neidherr, D.; Schmidt, S.; Steinmann, J.; Vogel, M.; Vorobjev, G.

    2015-01-01

    A beamline for transport of highly charged ions with energies as low as a few keV/charge has been constructed and commissioned at GSI. Complementary to the existing infrastructure of the HITRAP facility for deceleration of highly charged ions from the GSI accelerator, the new beamline connects the HITRAP ion decelerator and an EBIT with the associated experimental setups. Therefore, the facility can now transport the decelerated heavy highly charged ions to the experiments or supply them offline with medium-heavy highly charged ions from the EBIT, both at energies as low as a few keV/charge. Here we present the design of the 20 m long beamline with the corresponding beam instrumentation, as well as its performance in terms of energy and transport efficiency

  10. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    International Nuclear Information System (INIS)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  11. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Energy Technology Data Exchange (ETDEWEB)

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  12. Charging of Dust Grains in a Nuclear-Induced Plasma at High Pressures

    International Nuclear Information System (INIS)

    Pal’, A. F.; Starostin, A. N.; Filippov, A. V.

    2001-01-01

    The process of dust-grain charging in plasmas produced by radioactive decay products or spontaneous fission fragments in air and xenon at high pressures is studied numerically in the hydrodynamic approximation. It is shown that, at sufficiently high rates of gas ionization, the dust grains in air are charged by electrons rather than ions, so that the grain charge in air is comparable to that in electropositive gases. The results of numerical calculations based on a complete model agree well with the experimental data. The time evolution of the grain charge is investigated, and the characteristic time scales on which the grains acquire an electric charge are established. The validity of approximate theories of dust-grain charging in electropositive and electronegative gases at high pressures is examined

  13. The interactions of high-energy, highly-charged ions with fullerenes

    International Nuclear Information System (INIS)

    Ali, R.; Berry, H.G.; Cheng, S.

    1996-01-01

    In 1985, Robert Curl and Richard Smalley discovered a new form of carbon, the fullerene, C 60 , which consists of 60 carbon atoms in a closed cage resembling a soccer ball. In 1990, Kritschmer et al. were able to make macroscopic quantities of fullerenes. This has generated intense activity to study the properties of fullerenes. One area of research involves collisions between fullerenes and atoms, ions or electrons. In this paper we describe experiments involving interactions between fullerenes and highly charged ions in which the center-of-mass energies exceed those used in other work by several orders of magnitude. The high values of projectile velocity and charge state result in excitation and decay processes differing significantly from those seen in studies 3 at lower energies. Our results are discussed in terms of theoretical models analogous to those used in nuclear physics and this provides an interesting demonstration of the unity of physics

  14. Measurements of the Properties of Highly-charged high-Z ions

    International Nuclear Information System (INIS)

    Augustine J. Smith, Ph.D.

    2007-01-01

    We had proposed carrying out a systematic experimental investigation of the atomic physics of highly charged, high-Z ions, produced in the Lawrence Livermore National Laboratory LLNL electron beam ion trap (EBIT-I) in its high energy mode, superEBIT. In particular we were going to accurately measure line positions for Δn=0 transitions in few electron high-Z ions; this was meant to enable us to investigate relativistic and quantum electrodynamics QED contributions to the energy levels as well as the nuclear properties of heavy ions. We were also going to measure cross sections for various electron-ion interactions, the degree of polarization of emitted x-rays, and radiation cooling rates of various ionization stages of highly charged, high-Z ions. This would enable us to study fundamental atomic physics of high-Z ions at relativistic electron impact energies and in the intense nuclear fields of highly ionized, high-Z ions. This would extend previous measurements we have carried out to a regime where there is a paucity of good data. These measurements were expected to generate increased theoretical interest and activity in this area. The project will extend a very successful collaboration between Morehouse College (MC) and a national laboratory LLNL, Minority student training and development are major components of the proposal

  15. QED in highly-charged high Z ions - experiments at the storage ring ESR

    International Nuclear Information System (INIS)

    Mokler, P.H.

    1996-01-01

    A survey on the fundamental structure aspects of very heavy few -electron ions, in particular H-like systems, is presented. Special emphasis is given to contribution from quantum-electro-dynamics at strong central potentials. The technical possibilities to produce highly-charged heavy ions are reviewed and the ground-state Lamb-shift experiments performed at the heavy ion storage ring ESR are summarized. A short outlook on further developments in this field is added. (author). 23 refs, 9 figs

  16. Charge mobility modification of semiconducting carbon nanotubes by intrinsic defects

    International Nuclear Information System (INIS)

    Bai, Hongcun; Ma, Yujia; Ma, Jinsuo; Mei, Jingnan; Tong, Yan; Ji, Yongqiang

    2017-01-01

    Charge carrier mobility is a central transport property in nanoscale electronics. Carbon nanotubes (CNTs) are supposed to have high carrier mobility. The preparation methods of CNTs have been greatly improved, but the defects always exist. This work presented first-principle investigations on the charge carrier mobility of carbon nanotubes containing several intrinsic defects. The charge carrier mobilities of zigzag (10, 0) tubes with Stone–Wales, mono vacant and 5/8/5 defects were studied as an example to explore the role of defects. Most carrier mobilities were decreased, but several values of mobility are unexpectedly increased upon the appearance of the defects. This interesting result is discussed based on the changes of the stretching modulus, the effective mass of the carrier and deformation potential constant induced by the defects. (paper)

  17. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  18. Fabrication of a Co(OH)2/ZnCr LDH "p-n" Heterojunction Photocatalyst with Enhanced Separation of Charge Carriers for Efficient Visible-Light-Driven H2 and O2 Evolution.

    Science.gov (United States)

    Sahoo, Dipti Prava; Nayak, Susanginee; Reddy, K Hemalata; Martha, Satyabadi; Parida, Kulamani

    2018-04-02

    Photocatalytic generation of H 2 and O 2 by water splitting remains a great challenge for clean and sustainable energy. Taking into the consideration promising heterojunction photocatalysts, analogous energy issues have been mitigated to a meaningful extent. Herein, we have architectured a highly efficient bifunctional heterojunction material, i.e., p-type Co(OH) 2 platelets with an n-type ZnCr layered double hydroxide (LDH) by an ultrasonication method. Primarily, the Mott-Schottky measurements confirmed the n- and p-type semiconductive properties of LDH and CH material, respectively, with the construction of a p-n heterojunction. The high resolution transmission electron microscopy results suggest that surface modification of ZnCr LDH by Co(OH) 2 hexagonal platelets could form a fabulous p-n interfacial region that significantly decreases the energy barrier for O 2 and H 2 production by effectively separating and transporting photoinduced charge carriers, leading to enhanced photoreactivity. A deep investigation into the mechanism shows that a 30 wt % Co(OH) 2 -modified ZnCr LDH sample liberates maximum H 2 and O 2 production in 2 h, i.e., 1115 and 560 μmol, with apparent conversion efficiencies of H 2 and O 2 evolution of 13.12% and 6.25%, respectively. Remarkable photocatalytic activity with energetic charge pair transfer capability was illustrated by electrochemical impedance spectroscopy, linear sweep voltammetry, and photoluminescence spectra. The present study clearly suggests that low-cost Co(OH) 2 platelets are the most crucial semiconductors to provide a new p-n heterojunction photocatalyst for photocatalytic H 2 and O 2 production on the platform of ZnCr LDH.

  19. Rendering high charge density of states in ionic liquid-gated MoS 2 transistors

    NARCIS (Netherlands)

    Lee, Y.; Lee, J.; Kim, S.; Park, H.S.

    2014-01-01

    We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high

  20. Ionization of highly charged iodine ions near the Bohr velocity

    International Nuclear Information System (INIS)

    Zhou, Xianming; Cheng, Rui; Lei, Yu; Sun, Yuanbo; Ren, Jieru; Liu, Shidong; Deng, Jiachuan; Zhao, Yongtao; Xiao, Guoqing

    2015-01-01

    We have measured the L-shell X-rays of iodine from the collisions of 3 MeV I q+(q=15,20,22,25,26) ions with an iron target. It is found that the X-ray yield decreases with the increasing initial charge state. The energy of the subshell X-ray has a blue shift, which is independent of the projectile charge state. In addition, the relative intensity ratios of Lβ 1,3,4 and Lβ 2,15 to Lα 1,2 X-ray are obtained and compared with the theoretical calculations. That they are larger than for a singly ionized atom can be understood by the multiple ionization effect of the outer-shell electrons

  1. Peltier effect in multilayered nanopillars under high density charge current

    International Nuclear Information System (INIS)

    Gravier, L; Fukushima, A; Kubota, H; Yamamoto, A; Yuasa, S

    2006-01-01

    From the basic equations of thermoelectricity, we model the thermal regimes that develop in multilayered nanopillar elements experiencing continuous charge currents. The energy conservation principle was applied to all layer-layer and layer-electrode junctions. The obtained set of equations was solved to derive the temperature of each junction. The contribution of the Peltier effect is included in an effective resistance. This model gives satisfactory fits to experimental data obtained on a series of reference nanopillar elements

  2. Superconductivity and charge transfer excitations in high Tc superconductors

    International Nuclear Information System (INIS)

    Balseiro, C.A.; Alascio, B.; Gagliano, E.; Rojo, A.

    1988-01-01

    We present some numerical results to show that in a simple model which includes Cu 3d and O 2p orbitals together with inter and intra atomic correlations pairing between holes can occur due to charge transfer excitations. We present also a simple approximation to derive an effective Hamiltonian containing an interaction between particles which is attractive for some values of the different microscopic parameters

  3. High density thermite mixture for shaped charge ordnance disposal

    OpenAIRE

    Tamer Elshenawy; Salah Soliman; Ahmed Hawass

    2017-01-01

    The effect of thermite mixture based on aluminum and ferric oxides for ammunition neutralization has been studied and tested. Thermochemical calculations have been carried out for different percentage of Al using Chemical Equilibrium Code to expect the highest performance thermite mixture used for shaped charge ordnance disposal. Densities and enthalpy of different formulations have been calculated and demonstrated. The optimized thermite formulation has been prepared experimentally using col...

  4. Charge identification of highly ionizing particles in desensitized nuclear emulsion using high speed read-out system

    International Nuclear Information System (INIS)

    Toshito, T.; Kodama, K.; Yusa, K.; Ozaki, M.; Amako, K.; Kameoka, S.; Murakami, K.; Sasaki, T.; Aoki, S.; Ban, T.; Fukuda, T.; Naganawa, N.; Nakamura, T.; Natsume, M.; Niwa, K.; Takahashi, S.; Kanazawa, M.; Kanematsu, N.; Komori, M.; Sato, S.; Asai, M.; Koi, T.; Fukushima, C.; Ogawa, S.; Shibasaki, M.; Shibuya, H.

    2006-01-01

    We performed an experimental study of charge identification of heavy ions from helium to carbon having energy of about 290MeV/u using an emulsion chamber. Emulsion was desensitized by means of forced fading (refreshing) to expand a dynamic range of response to highly charged particles. For the track reconstruction and charge identification, the fully automated high speed emulsion read-out system, which was originally developed for identifying minimum ionizing particles, was used without any modification. Clear track by track charge identification up to Z=6 was demonstrated. The refreshing technique has proved to be a powerful technique to expand response of emulsion film to highly ionizing particles

  5. High prevalence of asymptomatic carriers of Tropheryma whipplei in different populations from the North of Spain.

    Science.gov (United States)

    García-Álvarez, Lara; Pérez-Matute, Patricia; Blanco, José Ramón; Ibarra, Valvanera; Oteo, José Antonio

    2016-01-01

    Tropheryma whipplei is the causative agent of Whipple disease. T. whipplei has also been detected in asymptomatic carriers with a very different prevalence. To date, in Spain, there are no data regarding the prevalence of T. whipplei in a healthy population or in HIV-positive patients, or in chronic fatigue syndrome (CFS). Therefore, the aim of this work was to assess the prevalence of T. whipplei in stools in those populations. Stools from 21 HIV-negative subjects, 65 HIV-infected, and 12 CFS patients were analysed using real time-PCR. HIV-negative and positive subjects were divided into two groups, depending on the presence/absence of metabolic syndrome (MS). Positive samples were sequenced. The prevalence of T. whipplei was 25.51% in 98 stool samples analysed. Prevalence in HIV-positive patients was significantly higher than in HIV-negative (33.8% vs. 9.09%, p=0.008). Prevalence in the control group with no associated diseases was 20%, whereas no positive samples were observed in HIV-negative patients with MS, or in those diagnosed with CFS. The prevalence observed in HIV-positive patients without MS was 30.35%, and with MS it was 55.5%. The number of positive samples varies depending on the primers used, although no statistically significant differences were observed. There is a high prevalence of asymptomatic carriers of T. whipplei among healthy and in HIV-infected people from Spain. The role of T. whipplei in HIV patients with MS is unclear, but the prevalence is higher than in other populations. Copyright © 2015 Elsevier España, S.L.U. and Sociedad Española de Enfermedades Infecciosas y Microbiología Clínica. All rights reserved.

  6. Highly stable microwave carrier generation using a dual-frequency distributed feedback laser

    NARCIS (Netherlands)

    Khan, M.R.H.; Bernhardi, Edward; Marpaung, D.A.I.; Burla, M.; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus; Roeloffzen, C.G.H.

    2012-01-01

    Photonic generation of microwave carriers by using a dual-frequency distributed feedback waveguide laser in ytterbium-doped aluminum oxide is demonstrated. A highperformance optical frequency locked loop is implemented to stabilize the microwave carrier. This approach results in a microwave

  7. The Effects of L2C Signal Tracking on High-Precision Carrier Phase GPS Positioning

    Science.gov (United States)

    Berglund, H.; Blume, F.; Estey, L. H.; Borsa, A. A.

    2010-12-01

    In 2005, the L2C signal was introduced to improve the accuracy, tracking and redundancy of the GPS system for civilian users. The L2C signal also provides improved SNR data when compared with the L2P(Y) legacy signal, comparable to that of the L1 C/A-code, which allows for better tracking at lower elevations. With the recent launch of the first block II-F satellite (SVN62/PRN25), there are 8 healthy satellites broadcasting L2C signals, or 25% of the constellation. However, GNSS network operators such as the UNAVCO Plate Boundary Observatory (PBO) have been hesitant to use the new signal as it is not well determined how tracking and logging L2C could affect the positions derived from L2 carrier phase measurements for a given receiver. The L2C carrier phase is in quadrature (90° out of phase) with the L2P(Y) phase that has been used by high-precision positioning software since the beginning of GPS. To complicate matters further, some receiver manufacturers (e.g. Trimble) correct for this when logging L2C phase while others (e.g. Topcon) do not. The L2C capability of receivers currently in widespread use in permanent networks can depend on firmware as well as hardware; in some cases receivers can simultaneously track L2C and L2P(Y) phases and some can track only one or the other, and the resulting observation files can depend on how individual operators configure the devices. In cases where both L2C and L2P(Y) are logged simultaneously, translation software (such as UNAVCO’s teqc) must be used carefully in order to select which L2 observation is written to RINEX (2.11) and used in positioning. Modifications were recently made to teqc to eliminate potential confusion in that part of the process; if L2C code observations appear in a RINEX (2.11) file produced by teqc, the L2 phase and S2 SNR observations were from the L2C carrier for those satellites. To date L2C analyses have been restricted to special applications such as snow depth and soil moisture using SNR data

  8. Generation of initial kinetic distributions for simulation of long-pulse charged particle beams with high space-charge intensity

    Directory of Open Access Journals (Sweden)

    Steven M. Lund

    2009-11-01

    Full Text Available Self-consistent Vlasov-Poisson simulations of beams with high space-charge intensity often require specification of initial phase-space distributions that reflect properties of a beam that is well adapted to the transport channel—both in terms of low-order rms (envelope properties as well as the higher-order phase-space structure. Here, we first review broad classes of kinetic distributions commonly in use as initial Vlasov distributions in simulations of unbunched or weakly bunched beams with intense space-charge fields including the following: the Kapchinskij-Vladimirskij (KV equilibrium, continuous-focusing equilibria with specific detailed examples, and various nonequilibrium distributions, such as the semi-Gaussian distribution and distributions formed from specified functions of linear-field Courant-Snyder invariants. Important practical details necessary to specify these distributions in terms of standard accelerator inputs are presented in a unified format. Building on this presentation, a new class of approximate initial kinetic distributions are constructed using transformations that preserve linear focusing, single-particle Courant-Snyder invariants to map initial continuous-focusing equilibrium distributions to a form more appropriate for noncontinuous focusing channels. Self-consistent particle-in-cell simulations are employed to show that the approximate initial distributions generated in this manner are better adapted to the focusing channels for beams with high space-charge intensity. This improved capability enables simulations that more precisely probe intrinsic stability properties and machine performance.

  9. Pricing Strategy in Online Retailing Marketplaces of Homogeneous Goods: Should High Reputation Seller Charge More?

    Science.gov (United States)

    Liu, Yuewen; Wei, Kwok Kee; Chen, Huaping

    There are two conflicting streams of research findings on pricing strategy: one is high reputation sellers should charge price premium, while the other is high reputation sellers should charge relatively low price. Motivated by this confliction, this study examines pricing strategy in online retailing marketplace of homogeneous goods. We conduct an empirical study using data collected from a dominant online retailing marketplace in China. Our research results indicate that, in online retailing marketplace of homogeneous goods, high reputation sellers should charge relatively low price, because the consumers of high reputation sellers are more price sensitive than the consumers of low reputation sellers.

  10. High Charge State Ions Extracted from Metal Plasmas in the Transition Regime from Vacuum Spark to High Current Vacuum Arc

    International Nuclear Information System (INIS)

    Yushkov, Georgy Yu.; Anders, A.

    2008-01-01

    Metal ions were extracted from pulsed discharge plasmas operating in the transition region between vacuum spark (transient high voltage of kV) and vacuum arc (arc voltage ∼ 20 V). At a peak current of about 4 kA, and with a pulse duration of 8 (micro)s, we observed mean ion charges states of about 6 for several cathode materials. In the case of platinum, the highest average charge state was 6.74 with ions of charge states as high as 10 present. For gold we found traces of charge state 11, with the highest average charge state of 7.25. At currents higher than 5 kA, non-metallic contaminations started to dominate the ion beam, preventing further enhancement of the metal charge states

  11. Development of Charge Sensitive Preamplifier and Readout Integrate Circuit Board for High Resolution Detector using ASIC Process

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, J. Y.; Kim, J. H.; Park, J. M.; Yang, J. Y.; Kim, K. Y.; Kim, Y. S. [RadTek Co., Daejeon (Korea, Republic of)

    2010-06-15

    - Design of discrete type charge sensitive amplifier for high resolution semi-conductor sensor - Design and develop the test board for the performance of charge sensitive amplifier with sensor - Performance of electrical test for the sensor and charge sensitive amplifier - Development of prototype 8 x 8 array type detector module - Noise equivalent charge test for the charge sensitive amplifier - Design and development of Micro SMD discrete type amplifier applying ASIC procedure - Development of Hybrid type charge sensitive amplifier including shape

  12. Production of Highly Charged Pharmaceutical Aerosols Using a New Aerosol Induction Charger.

    Science.gov (United States)

    Golshahi, Laleh; Longest, P Worth; Holbrook, Landon; Snead, Jessica; Hindle, Michael

    2015-09-01

    Properly charged particles can be used for effective lung targeting of pharmaceutical aerosols. The objective of this study was to characterize the performance of a new induction charger that operates with a mesh nebulizer for the production of highly charged submicrometer aerosols to bypass the mouth-throat and deliver clinically relevant doses of medications to the lungs. Variables of interest included combinations of model drug (albuterol sulfate) and charging excipient (NaCl) as well as strength of the charging field (1-5 kV/cm). Aerosol charge and size were measured using a modified electrical low pressure impactor system combined with high performance liquid chromatography. At the approximate mass median aerodynamic diameter (MMAD) of the aerosol (~0.4 μm), the induction charge on the particles was an order of magnitude above the field and diffusion charge limit. The nebulization rate was 439.3 ± 42.9 μl/min, which with a 0.1% w/v solution delivered 419.5 ± 34.2 μg of medication per minute. A new correlation was developed to predict particle charge produced by the induction charger. The combination of the aerosol induction charger and predictive correlations will allow for the practical generation and control of charged submicrometer aerosols for targeting deposition within the lungs.

  13. The mitochondrial pyruvate carrier mediates high fat diet-induced increases in hepatic TCA cycle capacity.

    Science.gov (United States)

    Rauckhorst, Adam J; Gray, Lawrence R; Sheldon, Ryan D; Fu, Xiaorong; Pewa, Alvin D; Feddersen, Charlotte R; Dupuy, Adam J; Gibson-Corley, Katherine N; Cox, James E; Burgess, Shawn C; Taylor, Eric B

    2017-11-01

    Excessive hepatic gluconeogenesis is a defining feature of type 2 diabetes (T2D). Most gluconeogenic flux is routed through mitochondria. The mitochondrial pyruvate carrier (MPC) transports pyruvate from the cytosol into the mitochondrial matrix, thereby gating pyruvate-driven gluconeogenesis. Disruption of the hepatocyte MPC attenuates hyperglycemia in mice during high fat diet (HFD)-induced obesity but exerts minimal effects on glycemia in normal chow diet (NCD)-fed conditions. The goal of this investigation was to test whether hepatocyte MPC disruption provides sustained protection from hyperglycemia during long-term HFD and the differential effects of hepatocyte MPC disruption on TCA cycle metabolism in NCD versus HFD conditions. We utilized long-term high fat feeding, serial measurements of postabsorptive blood glucose and metabolomic profiling and 13 C-lactate/ 13 C-pyruvate tracing to investigate the contribution of the MPC to hyperglycemia and altered hepatic TCA cycle metabolism during HFD-induced obesity. Hepatocyte MPC disruption resulted in long-term attenuation of hyperglycemia induced by HFD. HFD increased hepatic mitochondrial pyruvate utilization and TCA cycle capacity in an MPC-dependent manner. Furthermore, MPC disruption decreased progression of fibrosis and levels of transcript markers of inflammation. By contributing to chronic hyperglycemia, fibrosis, and TCA cycle expansion, the hepatocyte MPC is a key mediator of the pathophysiology induced in the HFD model of T2D. Copyright © 2017 The Authors. Published by Elsevier GmbH.. All rights reserved.

  14. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  15. High-temperature adsorption layers based on fluoridated polyimide and diatomite carrier

    Science.gov (United States)

    Yakovleva, E. Yu.; Shundrina, I. K.; Gerasimov, E. Yu.

    2017-09-01

    A way of preparing separation layers by the pyrolysis of fluorinated polyimide obtained from 2,4,6-trimethyl- m-phenylenediamine (2,4,6-TM mPDA) and 2,2-bis(3',4'-dicarboxyphenyl)hexafluoropropane (6FDA) applied onto a diatomite carrier is described. Thermogravimetry, elemental analysis, low-temperature nitrogen adsorption, high-resolution electron microscopy, and gas chromatography are used to study changes in the texture and chromatographic characteristics of these layers. It is found that changes in the structure and the effectivity of separation characteristic of the layers depend on the temperature of pyrolysis, which ranges from 250 to 1100°C. It is established that a layer of separation is formed at 250-350°C, and the order of elution of hydrocarbons is similar to their chromatographic behavior on such stationary phases as OV-101. Layers of amorphous carbon formed on the surfaces of individual particles on a diatomite surface at 500-700°C. These layers ensure highly stable and selective separation of permanent gases and hydrocarbons when they are present together.

  16. Ion sources development at GANIL for radioactive beams and high charge state ions

    International Nuclear Information System (INIS)

    Leroy, R.; Barue, C.; Canet, C.; Dupuis, M.; Flambard, J.L.; Gaubert, G.; Gibouin, S.; Huguet, Y.; Jardin, P.; Lecesne, N.; Leherissier, P.; Lemagnen, F.; Pacquet, J.Y.; Pellemoine-Landre, F.; Rataud, J.P.; Saint-Laurent, M.G.; Villari, A.C.C.; Maunoury, L.

    2001-01-01

    The GANIL laboratory has in charge the production of ion beams for nuclear and non nuclear physics. This article reviews the last developments that are underway in the fields of radioactive ion beam production, increase of the metallic ion intensities and production of highly charges ion beams. (authors)

  17. Solar photovoltaic charging of high voltage nickel metal hydride batteries using DC power conversion

    Science.gov (United States)

    Kelly, Nelson A.; Gibson, Thomas L.

    There are an increasing number of vehicle choices available that utilize batteries and electric motors to reduce tailpipe emissions and increase fuel economy. The eventual production of electricity and hydrogen in a renewable fashion, such as using solar energy, can achieve the long-term vision of having no tailpipe environmental impact, as well as eliminating the dependence of the transportation sector on dwindling supplies of petroleum for its energy. In this report we will demonstrate the solar-powered charging of the high-voltage nickel-metal hydride (NiMH) battery used in the GM 2-mode hybrid system. In previous studies we have used low-voltage solar modules to produce hydrogen via the electrolysis of water and to directly charge lithium-ion battery modules. Our strategy in the present work was to boost low-voltage PV voltage to over 300 V using DC-DC converters in order to charge the high-voltage NiMH battery, and to regulate the battery charging using software to program the electronic control unit supplied with the battery pack. A protocol for high-voltage battery charging was developed, and the solar to battery charging efficiency was measured under a variety of conditions. We believe this is the first time such high-voltage batteries have been charged using solar energy in order to prove the concept of efficient, solar-powered charging for battery-electric vehicles.

  18. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  19. Highly confined ions store charge more efficiently in supercapacitors

    Science.gov (United States)

    Merlet, C.; Péan, C.; Rotenberg, B.; Madden, P. A.; Daffos, B.; Taberna, P.-L.; Simon, P.; Salanne, M.

    2013-10-01

    Liquids exhibit specific properties when they are adsorbed in nanoporous structures. This is particularly true in the context of supercapacitors, for which an anomalous increase in performance has been observed for nanoporous electrodes. This enhancement has been traditionally attributed in experimental studies to the effect of confinement of the ions from the electrolyte inside sub-nanometre pores, which is accompanied by their partial desolvation. Here we perform molecular dynamics simulations of realistic supercapacitors and show that this picture is correct at the microscopic scale. We provide a detailed analysis of the various environments experienced by the ions. We pick out four different adsorption types, and we, respectively, label them as edge, planar, hollow and pocket sites upon increase of the coordination of the molecular species by carbon atoms from the electrode. We show that both the desolvation and the local charge stored on the electrode increase with the degree of confinement.

  20. Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

    Science.gov (United States)

    Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

    2012-03-14

    Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

  1. Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

    Science.gov (United States)

    Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

    2014-03-11

    Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

  2. Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2011-01-01

    THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

  3. Experimental characterization of the Hitrap Cooler trap with highly charged ions.

    OpenAIRE

    Fedotova, Svetlana

    2013-01-01

    The HITRAP (Highly charged Ions TRAP)facility is being set up and commissioned at GSI, Darmstadt. It will provide heavy, highly charged ions at low velocities to high-precision atomic physics experiments. Within this work the Cooler trap- the key element of the HITRAP facility was tested. The Cooler trap was assembled, aligned, and commissioned in trapping experiments with ions from off-line sources.The work performed within the scope of this thesis provided the baseline for further operation...

  4. A high resolution EELS study of free-carrier variations in H2+/H+ bombarded (100)GaAs

    International Nuclear Information System (INIS)

    Dubois, L.H.; Schwartz, G.P.

    1984-01-01

    High resolution electron energy loss spectroscopy (EELS) has been used to examine whether thermal recovery of the near-surface free-carrier concentration in Te-doped (100) GaAs is accomplished following low energy (250--1500 eV) hydrogen ion bombardment. For hydrogen ion impact energies below 500 eV, the nominal bulk free-carrier density is recovered by annealing at 725 K for 2 h. For comparable ion doses, the net free-carrier concentration decreases monotonically at higher impact energies under similar annealing conditions. The threshold for damage retention occurs close to the value of transmitted energy which is necessary to create either a Ga or an As interstitial point defect

  5. High-resolution X-ray spectra from low-temperature, highly charged ions

    International Nuclear Information System (INIS)

    Beiersdorfer, P.

    1996-09-01

    The electron beam ion traps (EBIT) at Livermore were designed for studying the x-ray emission of highly charged ions produced and excited by a monoenergetic electron beam. The precision with which the x-ray emission can be analyzed has recently been increased markedly when it became possible to decouple the temperature of the ions from the energy of the electron beam by several orders of magnitude. By adjusting the trap parameters, ion temperatures as low as 15.8±4.4 eV for Ti 20+ and 59.4±9.9 eV for Cs 45+ were achieved. These temperatures were more than two orders of magnitude lower than the energy of the multi-keV electron beam used for the production and excitation of the ions. A discussion of the techniques used to produce and study low-temperature highly charged ions is presented in this progress report. The low ion temperatures enabled measurements heretofore impossible. As an example, a direct observation of the natural line width of fast electric dipole allowed x-ray transitions is described. From the observed natural line width and b making use of the time-energy relations of the uncertainty principle we were able to determine a radiative transition rate of 1.65 fs for the 2p-3d resonance transition in neonlike Cs 45+ . A brief discussion of other high-precision measurements enabled by our new technique is also given

  6. Understanding charge transport and recombination losses in high performance polymer solar cells with non-fullerene acceptors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xuning [HEEGER Beijing Research & Development Center; School of Chemistry; Beihang University; Beijing 100191; China; Zuo, Xiaobing [X-ray Science Division; Argonne National Laboratory; Argonne; USA; Xie, Shenkun [HEEGER Beijing Research & Development Center; School of Chemistry; Beihang University; Beijing 100191; China; Yuan, Jianyu [Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices; Institute of Functional Nano & Soft Materials (FUNSOM); Soochow University; Suzhou; P. R. China; Zhou, Huiqiong [CAS Key Laboratory of Nanosystem and Hierarchical Fabrication; CAS Center for Excellence in Nanoscience; National Center for Nanoscience and Technology; Beijing 100190; China; Zhang, Yuan [HEEGER Beijing Research & Development Center; School of Chemistry; Beihang University; Beijing 100191; China

    2017-01-01

    Photovoltaic characteristics, recombination and charge transport properties are investigated. The determined recombination reduction factor can reconcile the supreme device performance in organic solar cells using non-fullerene ITIC acceptor and severe carrier losses in all-polymer devices with P(NDI2OD-T2).

  7. Investigation of carriers of lustrous carbon at high temperatures by infrared spectroscopy (FTIR

    Directory of Open Access Journals (Sweden)

    S. Eichholz

    2010-10-01

    Full Text Available Lustrous carbon is very important in processes of iron casting in green sand. Lustrous carbon (pirografit is a microcrystalline carbon form, which evolves from a gaseous phase. In the case of applying additions, generating lustrous carbon, for sands with bentonite, there is always a danger of emitting – due to a high temperature of liquid cast iron and a humidity - compounds hazardous for a human health. There can be: CO, SO2, benzene, toluene, ethylbenzene, xylene (the so-called: BTEX as well as polycyclic aromatic hydrocarbons(PAHs. In order to asses the selected mixtures: bentonite – carrier of lustrous carbon, in which a coal dust fraction was limited, thethermogravimetric analysis and the analysis of evolving gases were performed. Examinations were carried out in the ApplictaionsLaboratory NITZSCH-Gerätebau GmbH ,Selb/Bavaria, Germany. The NETZSCH TG 209 F1 Iris® thermal analyzer coupled to the BRUKER Optics FTIR TENSOR(TM was used to measure.

  8. A high charge state heavy ion beam source for heavy ion fusion

    International Nuclear Information System (INIS)

    Eylon, S.; Henestroza, E.

    1996-01-01

    A high current, low emittance, high charge state heavy ion beam source is being developed. This is designed to deliver a heavy ion fusion (HIF) driver accelerator scale beam. Using a high charge state beam in a driver accelerator for HIF may increase the acceleration efficiency, leading to a reduction in the driver accelerator size and cost. The proposed source system, which consists of a gas beam electron stripper followed by a high charge state beam separator, can be added to existing single charge state, low emittance, high brightness ion sources and injectors. We shall report on the source physics design using 3D beam simulations and experimental feasibility study results using a neutral gas stripper and a beam separator at the exit of the LBL 2 MV injector. (orig.)

  9. A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

    Science.gov (United States)

    Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

    2017-12-01

    In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

  10. HIAF: New opportunities for atomic physics with highly charged heavy ions

    Science.gov (United States)

    Ma, X.; Wen, W. Q.; Zhang, S. F.; Yu, D. Y.; Cheng, R.; Yang, J.; Huang, Z. K.; Wang, H. B.; Zhu, X. L.; Cai, X.; Zhao, Y. T.; Mao, L. J.; Yang, J. C.; Zhou, X. H.; Xu, H. S.; Yuan, Y. J.; Xia, J. W.; Zhao, H. W.; Xiao, G. Q.; Zhan, W. L.

    2017-10-01

    A new project, High Intensity heavy ion Accelerator Facility (HIAF), is currently being under design and construction in China. HIAF will provide beams of stable and unstable heavy ions with high energies, high intensities and high quality. An overview of new opportunities for atomic physics using highly charged ions and radioactive heavy ions at HIAF is given.

  11. High Temperature Thermosetting Polyimide Nanocomposites Prepared with Reduced Charge Organoclay

    Science.gov (United States)

    Campbell, Sandi; Liang, Margaret I.

    2005-01-01

    The naturally occurring sodium and calcium cations found in bentonite clay galleries were exchanged with lithium cations. Following the cation exchange, a series of reduced charge clays were prepared by heat treatment of the lithium bentonite at 130 C, 150 C, or 170 C. Inductively coupled plasma (ICP) analysis showed that heating the lithium clay at elevated temperatures reduced its cation exchange capacity. Ion exchange of heat-treated clays with either a protonated alkyl amine or a protonated aromatic diamine resulted in decreasing amounts of the organic modifier incorporated into the lithium clay. The level of silicate dispersion in a thermosetting polyimide matrix was dependent upon the temperature of Li-clay heat treatment as well as the organic modification. In general, clays treated at 150 C or 170 C, and exchanged with protonated octadcylamine or protonated 2,2'-dimethlybenzidine (DMBZ) showed a higher degree of dispersion than clays treated at 130 C, or exchanged with protonated dodecylamine. Dynamic mechanical analysis showed little change in the storage modulus or T(sub g) of the nanocomposites compared to the base resin. However, long term isothermal aging of the samples showed a significant decrease in the resin oxidative weight loss. Nanocomposite samples aged in air for 1000 hours at 288 C showed of to a decrease in weight loss compared to that of the base resin. This again was dependent on the temperature at which the Li-clay was heated and the choice of organic modification.

  12. Characterization and control of wafer charging effects during high-current ion implantation

    International Nuclear Information System (INIS)

    Current, M.I.; Lukaszek, W.; Dixon, W.; Vella, M.C.; Messick, C.; Shideler, J.; Reno, S.

    1994-02-01

    EEPROM-based sense and memory devices provide direct measures of the charge flow and potentials occurring on the surface of wafers during ion beam processing. Sensor design and applications for high current ion implantation are discussed

  13. A new method of removing the high value feedback resistor in the charge sensitive preamplifier

    International Nuclear Information System (INIS)

    Xi Deming

    1993-01-01

    A new method of removing the high value feedback resistor in the charge sensitive preamplifier is introduced. The circuit analysis of this novel design is described and the measured performances of a practical circuit are provided

  14. Calcium isotopic composition of high-latitude proxy carrier Neogloboquadrina pachyderma (sin.

    Directory of Open Access Journals (Sweden)

    A. Eisenhauer

    2009-01-01

    Full Text Available The accurate reconstruction of sea surface temperature (SST history in climate-sensitive regions (e.g. tropical and polar oceans became a challenging task in palaeoceanographic research. Biogenic shell carbonate SST proxies successfully developed for tropical regions often fail in cool water environments. Their major regional shortcomings and the cryptic diversity now found within the major high latitude proxy carrier Neogloboquadrina pachyderma (sin. highlight an urgent need to explore complementary SST proxies for these cool-water regions. Here we incorporate the genetic component into a calibration study of a new SST proxy for the high latitudes. We found that the calcium isotopic composition (δ44/40Ca of calcite from genotyped net catches and core-top samples of the planktonic foraminifera Neogloboquadrina pachyderma (sin. is related to temperature and unaffected by genetic variations. The temperature sensitivity has been found to be 0.17 (±0.02‰ per 1°C, highlighting its potential for downcore applications in open marine cool-water environments. Our results further indicate that in extreme polar environments, below a critical threshold temperature of 2.0 (±0.5°C associated with salinities below 33.0 (±0.5‰, a prominent shift in biomineralization affects the δ44/40Ca of genotyped and core-top N. pachyderma (sin., becoming insensitive to temperature. These findings highlight the need of more systematic calibration studies on single planktonic foraminiferal species in order to unravel species-specific factors influencing the temperature sensitivity of Ca isotope fractionation and to validate the proxies' applicability.

  15. Atomic physics of highly charged ions in an electron beam ion trap

    International Nuclear Information System (INIS)

    Marrs, R.E.

    1990-07-01

    Two electron beam ion traps are in use at LLNL for the purpose of studying the properties of very highly charged ions and their interactions with electrons. This paper reviews the operation of the traps and discusses recent experiments in three areas: precision transition energy measurements in the limit of very high ion charge, dielectronic recombination measurements for the He-like isoelectronic sequence, and measurements of x-ray polarization. 22 refs., 11 figs., 1 tab

  16. Acceleration of high charge density electron beams in the SLAC linac

    International Nuclear Information System (INIS)

    Sheppard, J.C.; Clendenin, J.E.; Jobe, R.K.; Lueth, V.G.; Millich, A.; Ross, M.C.; Seeman, J.T.; Stiening, R.F.

    1984-01-01

    The SLAC Linear Collider (SLC) will require both electron and positron beams of very high charge density and low emittance to be accelerated to about 50 GeV in the SLAC 3-km linac. The linac is in the process of being improved to meet this requirement. The program to accelerate an electron beam of high charge density through the first third of the SLC linac is described and the experimental results are discussed. 7 references, 5 figures

  17. The effect of temperature on guiding of slow highly charged ions through a mesoscopic glass capillary

    International Nuclear Information System (INIS)

    Bereczky, R J; Tökési, K; Kowarik, G; Ladinig, F; Schrempf, D; Aumayr, F

    2012-01-01

    We present first temperature dependent transmission measurements of slow highly charged ions through a single, straight Duran glass capillary with a high aspect ratio. By changing the temperature of the glass capillary the electrical conductivity of the Duran can be varied by several orders of magnitude. This held the promise to investigate the effect of conductivity on particle transport (build-up and removal of charge patches) through capillaries in more details.

  18. TEMPO-Oxidized Nanofibrillated Cellulose as a High Density Carrier for Bioactive Molecules.

    Science.gov (United States)

    Weishaupt, Ramon; Siqueira, Gilberto; Schubert, Mark; Tingaut, Philippe; Maniura-Weber, Katharina; Zimmermann, Tanja; Thöny-Meyer, Linda; Faccio, Greta; Ihssen, Julian

    2015-11-09

    Controlled and efficient immobilization of specific biomolecules is a key technology to introduce new, favorable functions to materials suitable for biomedical applications. Here, we describe an innovative and efficient, two-step methodology for the stable immobilization of various biomolecules, including small peptides and enzymes onto TEMPO oxidized nanofibrillated cellulose (TO-NFC). The introduction of carboxylate groups to NFC by TEMPO oxidation provided a high surface density of negative charges able to drive the adsorption of biomolecules and take part in covalent cross-linking reactions with 1-ethyl-3-[3-(dimethylamino)propyl]carbodiimide (EDAC) and glutaraldehyde (Ga) chemistry. Up to 0.27 μmol of different biomolecules per mg of TO-NFC could be reversibly immobilized by electrostatic interaction. An additional chemical cross-linking step prevented desorption of more than 80% of these molecules. Using the cysteine-protease papain as model, a highly active papain-TO-NFC conjugate was achieved. Once papain was immobilized, 40% of the initial enzymatic activity was retained, with an increase in kcat from 213 to >700 s(-1) for the covalently immobilized enzymes. The methodology presented in this work expands the range of application for TO-NFC in the biomedical field by enabling well-defined hybrid biomaterials with a high density of functionalization.

  19. Charged particle tracking in high multiplicity events at RHIC

    International Nuclear Information System (INIS)

    Foley, K.J.; Love, W.A.

    1985-01-01

    It is generally accepted that the ability to track some fraction of the charged particles produced in heavy ion collisions is very desirable. At a very minimum, one must detect the occurance of multiple interactions in a single crossing. The very tight beam structure at RHIC does not favor time separation, so the location of separate vertices seems the best solution. The limits of tracking large numbers of tracks in a solid angle approaching 4π have been explored. A model detector considered is a 2.5 m radius TPC, a true 3D tracking device. In order to estimate the particle density of a function of production angle, five Hijet Au-Au central events were used to deduce the particle density distribution as a function of polar angle. An important feature of a tracking detector is the effective ''pixel'' size - the area within which two tracks cannot be resolved. In a TPC with multistep avalanche chamber readout this is approximately 3 mm x 3 mm or approx.0.1 cm 2 . Using this pixel size we have calculated the radius at which the number of particles/pixel is 0.01 and 0.1. With the exception of the region very near the beam expect these distributions aren't expected to change very much with the application of a low (approx. 0.5 tesla) magnetic field. While the actual reconstruction efficiency will depend on the fine details of the apparatus and reconstruction program, the 1% fill fraction is safe for efficiencies in the 80 to 90% region. Tracking is found to be feasible at pseudorapidities up to 3

  20. Formulation of stable Bacillus subtilis AH18 against temperature fluctuation with highly heat-resistant endospores and micropore inorganic carriers.

    Science.gov (United States)

    Chung, Soohee; Lim, Hyung Mi; Kim, Sang-Dal

    2007-08-01

    To survive the commercial market and to achieve the desired effect of beneficial organisms, the strains in microbial products must be cost-effectively formulated to remain dormant and hence survive through high and low temperatures of the environment during transportation and storage. Dormancy and stability of Bacillus subtilis AH18 was achieved by producing endospores with enhanced heat resistance and using inorganic carriers. Heat stability assays, at 90 degrees C for 1 h, showed that spores produced under a sublethal temperature of 57 degrees C was 100 times more heat-resistant than the ones produced by food depletion at the growing temperature of 37 degrees C. When these highly heat-resistant endospores were formulated with inorganic carriers of natural and synthetic zeolite or kaolin clay minerals having substantial amount of micropores, the dormancy of the endospores was maintained for 6 months at 15-25 degrees C. Meanwhile, macroporous perlite carriers with average pore diameter larger than 3.7 microm stimulated the germination of the spores and rapid proliferation of the bacteria. These results indicated that a B. subtilis AH18 product that can remain dormant and survive through environmental temperature fluctuation can be formulated by producing heat-stressed endospores and incorporating inorganic carriers with micropores in the formulation step.