WorldWideScience

Sample records for high bias voltages

  1. Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

    Science.gov (United States)

    Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

    2017-08-01

    In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

  2. SPEAR-1: An experiment to measure current collection in the ionosphere by high voltage biased conductors

    Science.gov (United States)

    Raitt, W. John; Myers, Neil B.; Roberts, Jon A.; Thompson, D. C.

    1990-01-01

    An experiment is described in which a high electrical potential difference, up to 45 kV, was applied between deployed conducting spheres and a sounding rocket in the ionosphere. Measurements were made of the applied voltage and the resulting currents for each of 24 applications of different high potentials. In addition, diagnostic measurements of optical emissions in the vicinity of the spheres, energetic particle flow to the sounding rocket, dc electric field and wave data were made. The ambient plasma and neutral environments were measured by a Langmuir probe and a cold cathode neutral ionization gauge, respectively. The payload is described and examples of the measured current and voltage characteristics are presented. The characteristics of the measured currents are discussed in terms of the diagnostic measurements and the in-situ measurements of the vehicle environment. In general, it was found that the currents observed were at a level typical of magnetically limited currents from the ionospheric plasma for potentials less than 12 kV, and slightly higher for larger potentials. However, due to the failure to expose the plasma contactor, the vehicle sheath modified the sphere sheaths and made comparisons with the analytic models of Langmuir-Blodgett and Parker-Murphy less meaningful. Examples of localized enhancements of ambient gas density resulting from the operation of the attitude control system thrusters (cold nitrogen) were obtained. Current measurements and optical data indicated localized discharges due to enhanced gas density that reduced the vehicle-ionosphere impedance.

  3. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon.

    Science.gov (United States)

    Rodrigues, G; Lakshmy, P S; Baskaran, R; Kanjilal, D; Roy, A

    2010-02-01

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  4. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    Science.gov (United States)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  5. 1/f noise in forward biased high voltage 4H-SiC Schottky diodes

    Science.gov (United States)

    Shabunina, Eugenia I.; Levinshtein, Michael E.; Shmidt, Natalia M.; Ivanov, Pavel A.; Palmour, John W.

    2014-06-01

    The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier.

  6. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  7. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  8. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  9. 负偏压法测试大电压LED器件热阻%Measuring thermal resistance for high voltage LED device and module by applying negative bias voltage

    Institute of Scientific and Technical Information of China (English)

    陈国龙; 雷瑞瑞; 陈焕庭; 陈莹亮; 吕毅军; 高玉琳; 朱丽虹; 陈忠

    2012-01-01

    热阻是衡量LED器件散热性能的重要热学参数.采用外接负偏压恒压源方法,分别使用T3Ster/Teraled热光参数测试仪和NC2991热阻仪对正向电压超过仪器量程的同一型号功率型LED的热阻进行测试,并对两种测试结果的误差进行比较分析讨论.该方法拓展了热阻仪测量范围,使正向电压大于5V的LED器件/模块的热阻测试成为可能.%Thermal resistance is a key parameter on rating the heat dissipating capability of LEDs, so its measurement becomes particularly essential. A thermal resistance measurement method for high voltage LED device and module is provided here, which can measure LED sample with forward voltage larger than 5V by applying negative bias voltage to the T3Ster/Teraled and the NC2991 thermal resistance testers respectively. The results are further compared and discussed and prove to effectively expand the testing range of thermal resistance tester.

  10. Voltage biased Varistor-Transistor Hybrid Devices: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Raghvendra K Pandey

    2015-08-01

    Full Text Available The paper describes the properties and potential applications of a novel hybrid varistor device originating from biased voltage induced modified nonlinear current-voltage (I-V characteristics. Single crystal of an oxide semiconductor in the family of iron-titanates with the chemical formula of Fe2TiO5 (pseudobrookite has been used as substrate for the varistor. The modifications of the varistor characteristics are achieved by superimposition of a bias voltage in the current path of the varistor. These altered I-V characteristics, when analyzed, reveal the existence of embedded transistors coexisting with the varistor. These transistors exhibit mutual conductance, signal amplification and electronic switching which are the defining signatures of a typical transistor. The tuned varistors also acquire the properties of signal amplification and mutual conductance which expand the range of applications for a varistor beyond its traditional use as circuit protector. Both tuned varistors and the embedded transistors have attributes which make them suitable for many applications in electronics including at high temperatures and for radiation dominated environments such as space.

  11. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  12. Break Cohesion of Metal Contacts due to Voltage Bias

    Institute of Scientific and Technical Information of China (English)

    LI Yu-Xian

    2006-01-01

    @@ The instability of metal point contacts under voltage bias is calculated based on scattering theory. When the bias is applied, the transport channels will be closed and the chemical bonds will be broken, which modify the cohesive force of the point contact.

  13. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  14. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  15. Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage

    Institute of Scientific and Technical Information of China (English)

    MA Ying; WANG Lin-jun; LIU Jian-min; SU Qing-feng; XU Run; PENG Hong-yan; SHI Wei-min; XIA Yi-ben

    2006-01-01

    The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology,X-ray diffraction (XRD),RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth,making the growth of the high quality diamond film easier and cheaper than using other methods.

  16. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  17. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  18. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  19. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  20. ZnO films deposited by optimized PLD technique with bias voltages

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Hiroyuki; Shitara, Tamae; Komiyama, Takao; Chonan, Yasunori; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Tsuchiya Ebinokuchi, 015-0055 Yuri-Honjo (Japan)

    2010-02-15

    The pulsed laser deposition (PLD) technique with bias voltage application for formation of high quality ZnO films was investigated. Oxygen ambient in the PLD chamber significantly decreased the photoluminescence (PL) intensity of near band edge (NBE) emission. Then, instead of using oxygen ambient, the PLD technique with bias voltage application was optimized to attain the stoichiometric composition of the ZnO films. As the deposition temperature was increased, the X-ray spectrum width diffracted from the (0002) planes was decreased and it showed a minimum value at 700 C. The PL intensity of the NBE emission also had its maximum value for the film deposited at 700 C. For the ZnO films deposited at 700 C, the X-ray spectrum width showed the minimum value under a bias voltage of -50 V. The PL intensity of the NBE emission also had a maximum value under the same bias voltage. Thus, ZnO films deposited under a bias voltage of -50 V at 700 C had strong NBE emission intensities. These results could be explained not only by attaining the stoichiometric composition of the ZnO film but also by decreasing the number of high energy O{sup 2-} ions which caused non-radiative recombination centers in the film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  2. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

    Institute of Scientific and Technical Information of China (English)

    Wang Yiyuan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Gao Bo

    2011-01-01

    A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect.The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases.Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias conditions.This confirms that the ELDRS is related to the low electric field in a bipolar structure.The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator.This may be helpful for designing radiation hardened devices.

  3. Photoresponse of resonant tunneling diode photodetectors as a function of bias voltage

    Science.gov (United States)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the photocurrent-voltage relation of resonant tunneling diode (RTD) photodetectors by means of electrooptical transport measurements. The investigated RTDs are based on an Al0.6Ga0.4As/GaAs double barrier resonant tunneling structure (RTS) with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ= 1.3 μm. Under illumination, photogenerated holes can be captured for accumulation in vicinity to the RTS and modulate the resonant tunneling current that is highly sensitive to changes in the local electrostatic potential. The resulting photocurrent-voltage relation is found to be a nonlinear function of the applied bias voltage, and governed by the interplay of the electronic transport properties of the RTS and the dynamics of photogenerated holes. Time-resolved photocurrent measurements were employed to analyze the dynamics of photogenerated holes. From the photocurrent-time traces the quantum-efficiency and mean lifetime of photogenerated holes can be separately determined. We found that the photoresponse is suppressed by a low quantum efficiency for bias voltages below V 1 V, the built-in field is compensated by the external bias, and η(V) takes on a constant value. In this regime, the RTD photoresponse is mainly determined by the lifetime of holes accumulated at the RTS. The lifetime is limited by thermionic carrier escape and was found to decrease exponentially with the applied bias voltage.

  4. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  5. Energy-aware Supply Voltage and Body Biasing Voltage Scheduling Algorithm for Real-time Distributed Systems

    Institute of Scientific and Technical Information of China (English)

    SUYajuan; WEIShaojun

    2005-01-01

    Technique of energy minimization by combining Dynamic voltage scheduling (DVS) and Adaptive body biasing voltage (ABB) method for distributed realtime system at design level is proposed. First, a simplified energy optimizing model is illustrated where the supply voltage or body biasing voltage is kept as constant according to each separated frequency region, thus calculation of exceeding equation is avoided. Divergence of simplified and analytic model within 5% indicates the accuracy of this model. Based on it, the proposed approach named LEVVS (Low energy supply voltage and body biasing voltage scheduling algorithm) explores space of minimizing energy consumption by finding optimal trade-off between dynamic and static energy. The corresponding optimal supply voltage and body biasing voltage are determined by an iterative method in which the supply voltage and body biasing voltage of tasks are adjusted according to the value of energy latency differential coefficient of each task and slack time distribution of the system. Experiments show that using LEVVS approach, 51% more average energy reduction can be obtained than employing DVS method alone. Furthermore the effects of switch capacitance and global slack on the energy saving efficiency of LEVVS are investigated. The smaller the global slack or average switch capacitance is, the more the energy saving of LEVVS compared with DVS is.

  6. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  7. Interface circuit with adjustable bias voltage enabling maximum power point tracking of capacitive energy harvesting devices

    Science.gov (United States)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2016-12-01

    The operation analysis of a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage is carried out in this paper. Two configurations determined by the open or closed states of an electronic switch are examined. The increase of the voltage across a biasing capacitor, occurring when the switch is open, is proved theoretically and experimentally. With the decrease of this biasing voltage which occurs naturally when the switch is closed due to imperfections of the circuit, the bias voltage can be maintained close to a target value by appropriate ON and OFF control of the switch. As the energy converted by the variable capacitor on each cycle depends on the bias voltage, this energy can be therefore accurately controlled. This feature opens up promising perspectives for optimization the power harvested by electrostatic devices. Simulation results with and without electromechanical coupling effect are presented. In experimental tests, a simple switch control enabling to stabilize the bias voltage is described.

  8. Plasma response to transient high voltage pulses

    Indian Academy of Sciences (India)

    S Kar; S Mukherjee

    2013-07-01

    This review reports on plasma response to transient high voltage pulses in a low pressure unmagnetized plasma. Mainly, the experiments are reviewed, when a disc electrode (metallic and dielectric) is biased pulsed negative or positive. The main aim is to review the electron loss in plasmas and particle balance during the negative pulse electrode biasing, when the applied pulse width is less than the ion plasma period. Though the applied pulse width is less than the ion plasma period, ion rarefaction waves are excited. The solitary electron holes are reviewed for positive pulsed bias to the electrode. Also the excitation of waves (solitary electron and ion holes) is reviewed for a metallic electrode covered by a dielectric material. The wave excitation during and after the pulse withdrawal, excitation and propagation characteristics of various electrostatic plasma waves are reviewed here.

  9. Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage

    Institute of Scientific and Technical Information of China (English)

    Qin Zhi-Hui; Shi Dong-Xia; Gao Hong-Jun

    2008-01-01

    Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between (2×1) and c(4×2) structures on Ge(001) surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ge islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the vacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.

  10. Removal of shells of multi-wall carbon nanotubes by repeatedly scanning bias voltage

    Institute of Scientific and Technical Information of China (English)

    LI Qiuhong; WANG Taihong

    2004-01-01

    Carbon nanotubes can either be metallic or semiconducting, depending on their chirality. IBM converted multi-wall nanotubes into either a metallic or a semicon- ducting conductor by selectively removing the shells of the MWNTs. This was realized by applying a constant voltage to the tubes in air. Here we report a new method to remove the shells of a single MWNT just by repeatedly scanning the bias voltage in vacuum. Both the direct contact of the outmost shell with the electrodes and the high anisotropy of thermal conductivity help to remove the shells one by one.

  11. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  12. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  13. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Paul M., E-mail: paul.jordan@namlab.com; Simon, Daniel K.; Dirnstorfer, Ingo [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Technische Universität Dresden, Institut für Halbleiter- und Mikrosystemtechnik, 01062 Dresden (Germany)

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  14. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    Science.gov (United States)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+-434.81 nm and Ar+-442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m-3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  15. Portable High Voltage Impulse Generator

    Directory of Open Access Journals (Sweden)

    S. Gómez

    2011-07-01

    Full Text Available This paper presents a portable high voltage impulse generator which was designed and built with insulation up to 20 kV. This design was based on previous work in which simulation software for standard waves was developed. Commercial components and low-cost components were used in this work; however, these particular elements are not generally used for high voltage applications. The impulse generators used in industry and laboratories are usually expensive; they are built to withstand extra high voltage and they are big, making them impossible to transport. The proposed generator is portable, thereby allowing tests to be made on devices that cannot be moved from their location. The results obtained with the proposed impulse generator were satisfactory in terms of time and waveforms compared to other commercial impulse generators and the standard impulse wave simulator.

  16. Influence of bias voltage on the stability of CsI photocathodes exposed to air

    CERN Document Server

    Nitti, M A; Nappi, E; Singh, B K; Valentini, A

    2002-01-01

    We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

  17. Ultra-Low-Voltage Self-Body Biasing Scheme and Its Application to Basic Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Ramiro Taco

    2015-01-01

    Full Text Available The gate level body biasing (GLBB is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.

  18. Graphene nanoribbon devices at high bias

    Science.gov (United States)

    Han, Melinda Y.; Kim, Philip

    2014-02-01

    We present the electron transport in graphene nanoribbons (GNRs) at high electric bias conduction. When graphene is patterned into a few tens of nanometer width of a ribbon shape, the carriers are confined to a quasi-one-dimensional (1D) system. Combining with the disorders in the system, this quantum confinement can lead into a transport gap in the energy spectrum of the GNRs. Similar to CNTs, this gap depends on the width of the GNR. In this review, we examine the electronic properties of lithographically fabricated GNRs, focusing on the high bias transport characteristics of GNRs as a function of density tuned by a gate voltage. We investigate the transport behavior of devices biased up to a few volts, a regime more relevant for electronics applications. We find that the high bias transport behavior in this limit can be described by hot electron scattered by the surface phonon emission, leading to a carrier velocity saturation. We also showed an enhanced current saturation effect in the GNRs with an efficient gate coupling. This effect results from the introduction of the charge neutrality point into the channel, and is similar to pinch-off in MOSFET devices. We also observe that heating effects in graphene at high bias are significant.

  19. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  20. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  1. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  2. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  3. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  4. Voltage Controlled Exchange Bias in a Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3, which has a voltage controlled net magnetization at the (0001) surface. Voltage control of magnetism in a Cr2O3 thin film system has presented significant challenges. In this study we explore the electric control of exchange bias in an all-thin-film system of decreasing chromia film thickness with significant implications for scalability of ultra-low power memory and logical devices. Cross-sectional HRTEM indicates that grain boundaries in the metallic bottom electrode propagate into the Cr2O3 thin film with detrimental effects on leakage currents. We address this issue via a three-step growth method for the deposition of epitaxial Pd on sapphire. The resulting microstructure of the films is analyzed by reflection high-energy electron diffraction, tunneling electron microscopy and x-ray diffraction. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  5. Bistability in voltage-biased normal-metal/insulator/superconductor/insulator/normal-metal structures

    NARCIS (Netherlands)

    Snyman, I.; Nazarov, Y.V.

    2009-01-01

    As a generic example of a voltage-driven superconducting structure, we study a short superconductor connected to normal leads by means of low transparency tunnel junctions with a voltage bias V between the leads. The superconducting order parameter Δ is to be determined self-consistently. We study t

  6. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  7. Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

    Science.gov (United States)

    Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

    2017-04-01

    Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

  8. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    Science.gov (United States)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  9. Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Bandler, Simon

    2011-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

  10. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

    Science.gov (United States)

    Green, Ron; Lelis, Aivars; Habersat, Daniel

    2016-04-01

    This work reports on three important aspects of threshold-voltage instability in SiC power MOSFETs: (1) the threshold-voltage bias-temperature instability observed in commercial devices from two leading manufacturers, (2) a summary of the basic mechanisms driving this instability, and (3) the need for an improved test method for evaluating these devices. Even under significant overstress conditions, no negative threshold-voltage shift was observed in the most-recent-vintage commercial devices from one of the manufacturers during a -15 V, 175 °C negative-bias temperature stress lasting 120 h.

  11. Current-Voltage Characteristics of Molecular Devices at Low Bias

    Institute of Scientific and Technical Information of China (English)

    LIAO Yun-Xing; CHEN Hao; R.Note; H.Mizuseki; Y.Kawazoe

    2004-01-01

    We use density functional theory and the Green function formalism with charge energy effect included in the self-consistent calculation of the Ⅰ- Ⅴ characteristics of a single benzene ring with an appendage of cf3, and identify some interesting properties of the Ⅰ-Ⅴ characteristics at low bias. The molecule picks up a fractional charge at zero bias, then the additional fractional charge produces a barrier on the junction of the molecule and contacts to perturb current flow on the molecule. This phenomenon may be useful for the design of future molecular devices.

  12. Effects of DC bias voltages on the RF-excited plasma-tissue interaction

    Science.gov (United States)

    Yang, Aijun; Liu, Dingxin; Wang, Xiaohua; Li, Jiafeng; Chen, Chen; Rong, Mingzhe; Kong, Michael G.

    2016-10-01

    We present in this study how DC bias voltage impacts on the fluxes of reactive species on the skin tissue by means of a plasma-tissue interaction model. The DC bias voltage inputs less than 2% of the total discharge power, and hence it has little influence on the whole plasma characteritics including the volume-averaged densities of reactive species and the heating effect. However, it pushes the plasma bulk towards the skin surface, which significantly changes the local plasma characteristics in the vicinity of the skin surface, and in consequence remarkably enhances the flux densities of reactive species on the skin tissue. With the consideration of plasma dosage and heat damage on the skin tissue, DC bias voltage is a better approach compared with the common approach of increasing the plasma power. Since the DC voltage is easy to apply on the human body, it is a promising approach for use in clincial applications.

  13. Output pressure and harmonic characteristics of a CMUT as function of bias and excitation voltage

    DEFF Research Database (Denmark)

    Lei, Anders; Diederichsen, Søren Elmin; Hansen, Sebastian Molbech

    2015-01-01

    The large bandwidth makes CMUT based transducers interesting for both conventional and harmonic imaging. The inherent nonlinear behavior of the CMUT, however, poses an issue for harmonic imaging as it is difficult to dissociate the harmonics generated in the tissue from the harmonic content...... of the transmitted signal. The generation of intrinsic harmonics by the CMUT can be minimized by decreasing the excitation signal. This, however, leads to lower fundamental pressure which limits the desired generation of harmonics in the medium. This work examines the output pressure and harmonic characteristics...... of a CMUT as function of bias and excitation voltage. The harmonic to fundamental ratio of the surface pressures declines for decreasing excitation voltage and increasing bias voltage. The ratio, however, becomes unchanged for bias levels close to the pull-in voltage. The harmonic limitations of the CMUT...

  14. High voltage load resistor array

    Energy Technology Data Exchange (ETDEWEB)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  15. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  16. TiAlN coatings deposited by triode magnetron sputtering varying the bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Devia, D.M. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Tschiptschin, A.P. [Escola Politecnica da Universidade de Sao Paulo, Depto. de Engenharia Metalurgica e de Materiais, Sao Paulo, SP (Brazil); Velez, J.M. [Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia)

    2011-05-01

    TiAlN films were deposited on AISI O1 tool steel using a triode magnetron sputtering system. The bias voltage effect on the composition, thickness, crystallography, microstructure, hardness and adhesion strength was investigated. The coatings thickness and elemental composition analyses were carried out using scanning electron microscopy (SEM) together with energy dispersive X-ray (EDS). The re-sputtering effect due to the high-energy ions bombardment on the film surface influenced the coatings thickness. The films crystallography was investigated using X-ray diffraction characterization. The X-ray diffraction (XRD) data show that TiAlN coatings were crystallized in the cubic NaCl B1 structure, with orientations in the {l_brace}1 1 1{r_brace}, {l_brace}2 0 0{r_brace} {l_brace}2 2 0{r_brace} and {l_brace}3 1 1{r_brace} crystallographic planes. The surface morphology (roughness and grain size) of TiAlN coatings was investigated by atomic force microscopy (AFM). By increasing the substrate bias voltage from -40 to -150 V, hardness decreased from 32 GPa to 19 GPa. Scratch tester was used for measuring the critical loads and for measuring the adhesion.

  17. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  18. Analysis of bias voltage scan data recorded with hybrid Timepix1 silicon pixel assemblies at the DESY testbeam

    CERN Document Server

    Maimon, Shir

    2014-01-01

    This report will present results from the analysis of bias voltage scans in Timepix1 testbeam data. Three assemblies of varying sensor thickness were used to collect data. The effect of the bias voltage on charge sharing, in particular cluster size, was investigated and found to have a significant impact. The effect of the bias voltage on energy collection was also studied, leading to estimates for the depletion voltage, donor concentration, mobility and resistivity of each assembly. Finally, the effect of the bias voltage on the two-hit cluster resolution and detection efficiency was investigated. This report contains extracts from a longer document (LCD-OPEN-2014-001).

  19. High-frequency graphene voltage amplifier.

    Science.gov (United States)

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  20. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; Kelley, R.; Kilbourne, C.; Porter, F.; Sadlier, J.; Smith, S.

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  1. Eliminating leakage current in voltage-controlled exchange-bias devices

    Science.gov (United States)

    Mahmood, Ather; Echtenkamp, Will; Street, Michael; Binek, Christian; Magnetic Heterostructures Team

    Manipulation of magnetism by electric field has drawn much attention due to the technological importance for low-power devices, and for understanding fundamental magnetoelectric phenomena. A manifestation of electrically controlled magnetism is voltage control of exchange bias (EB). Robust isothermal voltage control of EB was demonstrated near room temperature using a heterostructure of Co/Pd thin film and an exchange coupled single crystal of the antiferromagnetic Cr2O3 (Chromia). A major obstacle for EB in lithographically patterned Chromia based thin-film devices is to minimize the leakage currents at high electric fields (>10 kV/mm). By combining electrical measurements on patterned devices and conductive Atomic Force Microscopy of Chromia thin-films, we investigate the defects which form conducting paths impeding the application of sufficient voltage for demonstrating the isothermal EB switching in thin film heterostructures. Technological challenges in the device fabrication will be discussed. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC Abstract DMR-0820521.

  2. Voltage biasing, cyclic voltammetry, & electrical impedance spectroscopy for neural interfaces.

    Science.gov (United States)

    Wilks, Seth J; Richner, Tom J; Brodnick, Sarah K; Kipke, Daryl R; Williams, Justin C; Otto, Kevin J

    2012-02-24

    Electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measure properties of the electrode-tissue interface without additional invasive procedures, and can be used to monitor electrode performance over the long term. EIS measures electrical impedance at multiple frequencies, and increases in impedance indicate increased glial scar formation around the device, while cyclic voltammetry measures the charge carrying capacity of the electrode, and indicates how charge is transferred at different voltage levels. As implanted electrodes age, EIS and CV data change, and electrode sites that previously recorded spiking neurons often exhibit significantly lower efficacy for neural recording. The application of a brief voltage pulse to implanted electrode arrays, known as rejuvenation, can bring back spiking activity on otherwise silent electrode sites for a period of time. Rejuvenation alters EIS and CV, and can be monitored by these complementary methods. Typically, EIS is measured daily as an indication of the tissue response at the electrode site. If spikes are absent in a channel that previously had spikes, then CV is used to determine the charge carrying capacity of the electrode site, and rejuvenation can be applied to improve the interface efficacy. CV and EIS are then repeated to check the changes at the electrode-tissue interface, and neural recordings are collected. The overall goal of rejuvenation is to extend the functional lifetime of implanted arrays.

  3. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-01-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction. PMID:27759080

  4. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-10-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction.

  5. Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

    Directory of Open Access Journals (Sweden)

    Hyun-Jin Kim

    2015-12-01

    Full Text Available In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

  6. High-voltage engineering and testing

    CERN Document Server

    Ryan, Hugh M

    2013-01-01

    This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

  7. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    Science.gov (United States)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  8. Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

    Directory of Open Access Journals (Sweden)

    Chip-Hong Chang

    2016-08-01

    Full Text Available Static Random Access Memory (SRAM has recently been developed into a physical unclonable function (PUF for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF is that while maximizing the mismatches between the transistors in the cross-coupled inverters improves the quality of the SPUF, this ironically also gives rise to increased memory read/write failures. For this reason, the memory cells of existing SPUFs cannot be reused as storage elements, which increases the overheads of cryptographic system where long signatures and high-density storage are both required. This paper presents a novel design methodology for dual-mode SRAM cell optimization. The design conflicts are resolved by using word-line voltage modulation, dynamic voltage scaling, negative bit-line and adaptive body bias techniques to compensate for reliability degradation due to transistor downsizing. The augmented circuit-level techniques expand the design space to achieve a good solution to fulfill several otherwise contradicting key design qualities for both modes of operation, as evinced by our statistical analysis and simulation results based on complementary metal–oxide–semiconductor (CMOS 45 nm bulk Predictive Technology Model.

  9. Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

    2016-11-21

    We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

  10. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  11. Compact, Lightweight, High Voltage Propellant Isolators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  12. Compact, Lightweight, High Voltage Propellant Isolators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  13. High voltage electricity installations a planning perspective

    CERN Document Server

    Jay, Stephen Andrew

    2006-01-01

    The presence of high voltage power lines has provoked widespread concern for many years. High Voltage Electricity Installations presents an in-depth study of policy surrounding the planning of high voltage installations, discussing the manner in which they are percieved by the public, and the associated environmental issues. An analysis of these concerns, along with the geographical, environmental and political influences that shape their expression, is presented. Investigates local planning policy in an area of the energy sector that is of highly topical environmental and public concern Cover

  14. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  15. Radiatively heated high voltage pyroelectric crystal pulser

    Energy Technology Data Exchange (ETDEWEB)

    Antolak, A.J., E-mail: antolak@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States); Chen, A.X. [Sandia National Laboratories, Livermore, CA 94550 (United States); Leung, K.-N. [Sandia National Laboratories, Livermore, CA 94550 (United States); Nuclear Engineering Department, University of California, Berkeley (United States); Morse, D.H.; Raber, T.N. [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2014-01-21

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  16. Effect of bias voltage on TiAlSiN nanocomposite coatings deposited by HiPIMS

    Science.gov (United States)

    Ma, Quansheng; Li, Liuhe; Xu, Ye; Gu, Jiabin; Wang, Lei; Xu, Yi

    2017-01-01

    TiAlSiN nanocomposite coatings were deposited onto cemented carbide (WC-10 wt.%, Co) substrates by high power impulse magnetron sputtering (HiPIMS). The effect of substrate bias voltage on plasma discharge characterization of HiPIMS, element concentration, deposition rate, microstructure, surface/cross-sectional morphology, hardness and adhesion strength of coatings were studied. Compared with those deposited with direct current magnetic sputtering (DCMS), HiPIMS-deposited TiAlSiN coatings show improvements in some properties, including the surface roughness, the grain size, the hardness and adhesion strength, but a decrease in the deposition rate. When the bias voltage increases, the discharge current rose up from 118A to 165A. HiPIMS-deposited TiAlSiN coatings show a shift of the preferred crystallographic orientation from (220) to (200) and decreases in surface roughness from 14.1 nm down to 7.4 nm and grain size from 10.5 nm to 7.4 nm. Meanwhile, a change in crystal morphology from columnar to equiaxial and a grain refinement, as well as an increase of hardness from 30 GPa up to 42 GPa of those TiAlSiN coatings were observed with the increasing bias voltage and a decrease in adhesion strength from HF2 to HF5 of those coatings were revealed by indentation adhesion test.

  17. Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques

    OpenAIRE

    Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2009-01-01

    A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body-biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells. a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing...

  18. High voltage and electrical insulation engineering

    CERN Document Server

    Arora, Ravindra

    2011-01-01

    "The book is written for students as well as for teachers and researchers in the field of High Voltage and Insulation Engineering. It is based on the advance level courses conducted at TU Dresden, Germany and Indian Institute of Technology Kanpur, India. The book has a novel approach describing the fundamental concept of field dependent behavior of dielectrics subjected to high voltage. There is no other book in the field of high voltage engineering following this new approach in describing the behavior of dielectrics. The contents begin with the description of fundamental terminology in the subject of high voltage engineering. It is followed by the classification of electric fields and the techniques of field estimation. Performance of gaseous, liquid and solid dielectrics under different field conditions is described in the subsequent chapters. Separate chapters on vacuum as insulation and the lightning phenomenon are included"--

  19. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... and tip Fermi levels. STM here involves coherent two-step interfacial electron transfer between the redox level and the enclosing substrate and tip. We have also extended previous experimental in situ STM studies of the blue copper protein Pseudomonas aeruginosa azurin, adsorbed on Au(111), to cover...

  20. SEMICONDUCTOR DEVICES Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    Science.gov (United States)

    Yan, Pu; Liang, Wang; Tingting, Yuan; Sihua, Ouyang; Lei, Pang; Guoguo, Liu; Weijun, Luo; Xinyu, Liu

    2010-10-01

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate—source and gate—drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate—source and gate—drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

  1. Design of a Low Voltage CMOS LNA at 2 GHz with Substrate-Bias

    Science.gov (United States)

    Wan Muhamad Hatta, S. F.; Soin, N.

    2008-11-01

    A low-voltage (1.5V), 2 GHz cascode CMOS low noise amplifier (LNA) has been designed and simulated using Silvaco's SMARTSPICE RF. The proposed design employs substrate bias of 0.5V and utilizes inductive source degeneration. This paper further presents an analysis on the effect of substrate bias on the MOSFET's threshold voltage as well as the transconductance. The simulated power gain (S21) is of 5.2 dB and a noise figure (NF) of 2.2975 dB is achieved at the operating frequency of 2 GHz. The Input Referred 1dB Compression Point (P1dB) and the third-order intercept point (IP3) are -12.891 dB and -1.6844 dB respectively.

  2. Influence of bias voltage on structural and optical properties of TiNx thin films

    Science.gov (United States)

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-01

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H2 and N2 gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  3. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...... promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed....

  4. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...... promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed....

  5. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  6. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

    Institute of Scientific and Technical Information of China (English)

    GUO Yang-Ming; MO Dang; LI Zhe-Yi; LIU Yi; HE Zhen-Hui; CHEN Di-Hu

    2004-01-01

    @@ Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(100) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of spa-bond to sp2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9-5.4eV were measured. The refractive index n and the relative sp3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi-Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp3-bond to sp2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp3 C fraction can be prepared by changing the substrate bias voltage.

  7. Relationship between bias voltage and microstructure as well as properties of CrAlYN films

    Institute of Scientific and Technical Information of China (English)

    付英英; 李红轩; 吉利; 刘晓红; 刘流; 周惠娣; 陈建敏

    2015-01-01

    In this work, a series of CrAlYN films doped with 1 at.%yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 ◦C, and good friction and wear properties at 600 and 800 ◦C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400◦C) due to the serious abrasive wear.

  8. Programmable high voltage power supply with regulation confined to the high voltage section

    Science.gov (United States)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  9. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Marzocchi, Badder

    2017-01-01

    The CMS Electromagnetic Calorimeter is made of scintillating lead tungstate crystals, using avalanche photodiodes (APD) as photo-detectors in the barrel part. The high voltage system, consisting of 1224 channels, biases groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  10. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  11. The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

    Directory of Open Access Journals (Sweden)

    Liam Ward

    2014-04-01

    Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

  12. High voltage testing for the MAJORANA DEMONSTRATOR

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arnquist, I.J. [Pacific Northwest National Laboratory, Richland, WA (United States); Avignone, F.T. [Department of Physics and Astronomy, University of South Carolina, Columbia, SC (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Barabash, A.S. [National Research Center “Kurchatov Institute” Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bertrand, F.E. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Bradley, A.W. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Brudanin, V. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Busch, M. [Department of Physics, Duke University, Durham, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Buuck, M. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Byram, D. [Department of Physics, University of South Dakota, Vermillion, SD (United States); Caldwell, A.S. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chan, Y-D. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Christofferson, C.D. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chu, P.-H. [Los Alamos National Laboratory, Los Alamos, NM (United States); Cuesta, C., E-mail: ccuesta@uw.edu [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Detwiler, J.A.; Doe, P.J. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); and others

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in {sup 76}Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  13. High voltage testing for the MAJORANA DEMONSTRATOR

    Science.gov (United States)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  14. High voltage testing for the Majorana Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.; Barabash, A.; Bertrand, F.; Bradley, A. W.; Brudanin, V.; Busch, Matthew; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Yuen-Dat; Christofferson, C. D.; Chu, Pamela M.; Cuesta, C.; Detwiler, Jason A.; Doe, P. J.; Dunagan, C.; Efremenko, Yuri; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I.; Guiseppe, V. E.; Henning, R.; Hoppe, Eric W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K.; Kidd, M. F.; Konovalov, S.; Kouzes, Richard T.; Laferriere, Brian D.; Leon, Jonathan D.; Li, Alexander D.; MacMullin, J.; Martin, R. D.; Massarcyk, R.; Meijer, S. J.; Mertens, S.; Orrell, John L.; O' Shaughnessy, C.; Poon, Alan W.; Radford, D. C.; Rager, J.; Rielage, Keith; Robertson, R. G. H.; Romero Romo, M.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, Anne-Marie E.; Tedeschi, D.; Thompson, Andrew; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, Sergey; Vetter, Kai; Vorren, Kris R.; White, Brandon R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, Chang-Hong; Yumatov, V.

    2016-07-01

    The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  15. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.;

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our...... analysis is based on a single scaling factor, extracted from the experimental I(V) characteristics. For both polarities, this scaling factor transforms the change of bias voltage into a change of electron energy. The latter is determined with respect to the top of the potential barrier of the contact....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  16. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Science.gov (United States)

    2011-11-15

    ... Energy Regulatory Commission Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011 from 9 a.m. to 4:30 p.m. This staff-led workshop will be...

  17. Development of high-voltage pulse generator with variable amplitude and duration

    Science.gov (United States)

    Upadhyay, J.; Sharma, M. L.; Ahuja, Aakash B.; Navathe, C. P.

    2014-06-01

    A high voltage pulse generator with variable amplitude (100-3000 V) and duration (100-2000 μs) has been designed and developed. The variable duration pulse has been generated by adopting a simple and novel technique of varying the turn off delay time of a high voltage Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based switch by varying external gate resistance. The pulse amplitude is made variable by adjusting biasing supply of the high voltage switch. The high voltage switch has been developed using a MOSFET based stack of 3 kV rating with switching time of 7 ns.

  18. Modeling of long High Voltage AC Underground

    DEFF Research Database (Denmark)

    Gudmundsdottir, Unnur Stella; Bak, Claus Leth; Wiechowski, W. T.

    2010-01-01

    This paper presents the work and findings of a PhD project focused on accurate high frequency modelling of long High Voltage AC Underground cables. The project is cooperation between Aalborg University and Energinet.dk. The objective of the project is to investigate the accuracy of most up to date...

  19. High-voltage test and measuring techniques

    CERN Document Server

    Hauschild, Wolfgang

    2014-01-01

    It is the intent of this book to combine high-voltage (HV) engineering with HV testing technique and HV measuring technique. Based on long-term experience gained by the authors as lecturer and researcher as well as member in international organizations, such as IEC and CIGRE, the book will reflect the state of the art as well as the future trends in testing and diagnostics of HV equipment to ensure a reliable generation, transmission and distribution of electrical energy. The book is intended not only for experts but also for students in electrical engineering and high-voltage engineering.

  20. High voltage testing for the MAJORANA Demonstrator

    CERN Document Server

    Abgrall, N; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Byram, D; Caldwell, A S; Chan, Y-D; Christofferson, C D; Chu, P -H; Cuesta, C; Detwiler, J A; Doe, P J; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Fu, Z; Galindo-Uribarri, A; Giovanetti, G K; Goett, J; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howard, S; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Li, A; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Snyder, N; Suriano, A M; Tedeschi, D; Thompson, A; Ton, K T; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C -H; Yumatov, V

    2016-01-01

    The MAJORANA Collaboration is constructing the MAJORANA Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in Ge-76. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA Demonstrator. This eff?ect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including diff?erent improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA Demonstrator was characterized and the micro-discharge eff?ects during the MAJORANA Demonstrator commissioning phase were studied. A stable c...

  1. Modular high voltage power supply for chemical analysis

    Science.gov (United States)

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  2. Planar multijunction high voltage solar cells

    Science.gov (United States)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

    1980-01-01

    Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

  3. Negative Bias Temperature Instability "Recovery" under Negative Stress Voltage with Different Oxide Thicknesses

    Institute of Scientific and Technical Information of China (English)

    CAO Yan-Rong; MA Xiao-Hua; HAO Yue; ZHU Min-Bo; TIAN Wen-Chao; ZHANG Yue

    2011-01-01

    Different phenomena are observed under negative gate voltage stress which is smaller than the previous degradation stress in PMOSFETs with different oxide thicknesses. We adopt the real time method to make a point of the drain current to study the degradation and recovery of negative bias temperature instability (NBTI). For the device with thin oxide, recovery phenomenon appears when smaller negative voltage stress was applied, due to the more influencing oxide charges detrapping effects than the interface states. For the device with thick oxide, not recovery but degradation phenomenon comes forth. As many charges are trapped in the deeper position and higher energy level in the oxide, these charges can not be detrapped. Therefore, the effect of the charge detrapping is smaller than that of the interface states in the thick oxide. The degradation presents itself during the 'recovery' time.

  4. The VELO High Voltage System Control Software

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L; De Capua, S

    2010-01-01

    This note describes the VELO high voltage control software. The implementation of its structure as a PVSS Finite State Machine is emphasized. The main error conditions that may occur during operation is also discussed. The VELO HV software conforms to the specification of the VELO.

  5. An Inexpensive Source of High Voltage

    Science.gov (United States)

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  6. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    Science.gov (United States)

    Vizkelethy, G.; King, M. P.; Aktas, O.; Kizilyalli, I. C.; Kaplar, R. J.

    2017-08-01

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories' nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. The displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  7. Improved Lifetime High Voltage Switch Electrode.

    Science.gov (United States)

    2014-09-26

    capabilities of spark switches (e.g., saturable magnetic reactors, ignitions, and high power vacuum tubes), none has the combined high voltage, high...series impedance of the switch . Additionally, the eroded material may be deposited on internal insulators , thereby inducing pretriggering and erratic...of dry air, a typical spark switch insulating gas. -7- ENERGETIC IONS FROM ION IMPLANTER 0 0 0 0 -0 0 00000 0 0 oSUBSTRATE 0 - 0 o 0 SAMPLE= ’ 0• 0 U 0

  8. 30 CFR 75.804 - Underground high-voltage cables.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance...

  9. 30 CFR 77.810 - High-voltage equipment; grounding.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall...

  10. Low frequency voltage noise in current biased HTCS thin films. [BiSrCaCuO

    Energy Technology Data Exchange (ETDEWEB)

    Gierlowski, P. (Inst. Fizyki PAN, Warszawa (Poland)); Jung, G. (Inst. Fizyki PAN, Warszawa (Poland) Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy)); Kula, W. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Lewandowski, S.J. (Inst. Fizyki PAN, Warszawa (Poland)); Savo, B. (Dipt. di Fisica, Univ. di Salerno (Italy)); Sobolewski, R. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Tebano, A. (Dipt. di Ingegneria Meccanica, Univ. di Roma Tor-Vergata (Italy)); Vecchione, A. (Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy))

    1994-02-01

    Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-T[sub c] superconducting thin films. Generally, the spectra scale as 1/f[sup [alpha

  11. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  12. High voltage pulse generator. [Patent application

    Science.gov (United States)

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  13. High Voltage Design Guide. Volume V. Spacecraft

    Science.gov (United States)

    1983-01-01

    connector are soldered, with the possible exception of very high voltage points. Even then rudimentary connectors such as that shown In figura 13 ar used...addition, large stresses will be imposed on the struc- tural (high resistance) member. This conductor movement will flex and stretch the conductors, placing...materials used for airplane systems provided they meet the electrical, chemical, and mechanical characteristic requirements imposed by the design

  14. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    , and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often......The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...... determined by the performance at the system worst case operating point which is usually at minimum input voltage and maximum power. Except for the non-regulating V6 converters, all published solutions exhibit a very significant drop in conversion efficiency at minimum input voltage and maximum output power...

  15. High voltage source control on FODS

    Science.gov (United States)

    Patalakha, D. I.; Kalinin, A. Yu; Kulagin, N. V.

    2017-01-01

    The implementation of the high voltage power supply control system (HVPSCS) for experimental setup FODS (FOcusing Doublearmed Spectrometer) at accelerator U-70 of the Federal State Budgetary Institution State Research Center Of Russia Institute for High Energy Physics of the National Research Centre “Kurchatov Institute” (hereinafter referred to as IHEP) or for the test bench of the detector components is considered. The required set of hardware is defined and the appropriate software to operate HVPSCS is written in C/C++ codes. The date acquisition (DAQ) system [1] makes automatic control on HVPSCS for data taking run. It allows to get the dependence of appropriate detector parameters on the high voltage supply values and choose its optimal values for FODS detectors. The test run results of HVPSCS are presented.

  16. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  17. Effect of bias voltage on microstructure and mechanical properties of arc evaporated (Ti, Al)N hard coatings

    Indian Academy of Sciences (India)

    F Aliaj; N Syla; S Avdiaj; T Dilo

    2013-06-01

    In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti0.5Al0.5 powder metallurgical target in a reactive nitrogen atmosphere at three different bias voltages: UB = −25, −50 and −100 V. The coatings were characterized in terms of compositional, microstructural and mechanical properties. Microstructure of the coatings was investigated with the aid of X-ray diffraction in glancing angle mode, which revealed information on phase composition, crystallite size, stress-free lattice parameter and residual stress. Mechanical properties were deduced from nano-indentation measurements. The residual stress in all the coatings was compressive and increased with increasing bias voltage in a manner similar to that reported in literature for Ti–Al–N coatings deposited with CAE. The bias voltage was also found to significantly influence the phase composition and crystallite size. At −25 V bias voltage the coating was found in single phase fcc-(Ti, Al)N and with relatively large crystallites of ∼9 nm. At higher bias voltages (−50 and −100 V), the coatings were found in dual phase fcc-(Ti, Al)N and fcc-AlN and the size of crystallites reduced to approximately 5 nm. The reduction of crystallite size and the increase of compressive residual stress with increasing bias voltage both contributed to an increase in hardness of the coatings.

  18. High-voltage test and measuring techniques

    Energy Technology Data Exchange (ETDEWEB)

    Hauschild, Wolfgang; Lemke, Eberhard

    2014-04-01

    Reflects the unit of both HV testing and measuring technique. Intended as an ''application guide'' for the relevant IEC standards. Refers also to future trends in HV testing and measuring technique. With numerous illustrations. It is the intent of this book to combine high-voltage (HV) engineering with HV testing technique and HV measuring technique. Based on long-term experience gained by the authors as lecturer and researcher as well as member in international organizations, such as IEC and CIGRE, the book will reflect the state of the art as well as the future trends in testing and diagnostics of HV equipment to ensure a reliable generation, transmission and distribution of electrical energy. The book is intended not only for experts but also for students in electrical engineering and high-voltage engineering.

  19. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Lytvynenko, Ia.M. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Hauet, T., E-mail: thomas.hauet@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Montaigne, F. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Bibyk, V.V. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Andrieu, S. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France)

    2015-12-15

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height.

  20. A high voltage programmable ramp generator

    Science.gov (United States)

    Upadhyay, J.; Joshi, M. J.; Deshpande, P. P.; Sharma, M. L.; Navathe, C. P.

    2008-05-01

    In this paper, a ramp generator with programmable slope is presented. It consists of a high voltage step generator, followed by integrator. The capacitor and inductor in the integrator are designed such that they can be varied by a microcontroller. This circuit generates two bipolar ramps with fastest speed <1ns and provides continuous speed variation from 6to30ns for a ramp of 500V. This is being developed as a part of automated streak camera for deflection of electron beam.

  1. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  2. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  3. Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir-Mn Exchange Biased Single and Double Tunnel Junctions

    Science.gov (United States)

    Saito, Yoshiaki; Amano, Minoru; Nakajima, Kentaro; Takahashi, Shigeki; Sagoi, Masayuki; Inomata, Koichiro

    2000-10-01

    Dual spin-valve-type double tunnel junctions (DTJs) of Ir-Mn/CoFe/AlOx/Co90Fe10/AlOx/CoFe/Ir-Mn and spin-valve-type single tunnel junctions (STJs) of Ir-Mn/CoFe/AlOx/CoFe/Ni-Fe were fabricated using an ultrahigh vacuum sputtering system, conventional photolithography and ion-beam milling. The STJs could be fabricated with various barrier heights by changing the oxidization conditions during deposition and changing the annealing temperature after deposition, while the AlOx layer thickness remained unchanged. There was a correlation between barrier width, height estimated using Simmons’ expressions, and dc bias voltage dependence on the MR ratio. The VB dependence on the tunneling magnetoresistance (TMR) ratio was mainly related to the barrier width, and the decrease in the TMR ratio with increasing bias voltage is well explained, taking into account the spin-independent two-step tunneling via defect states in the barrier, as a main mechanism, at room temperature. Under optimized oxidization and annealing conditions, the maximum TMR ratio at a low bias voltage, and the dc bias voltage value at which the TMR ratio decreases in value by half (V1/2) were 42.4% and 952 mV in DTJs, and 49.0% and 425 mV in STJs, respectively.

  4. Isolated Fast High-Voltage Switching Circuit

    Science.gov (United States)

    Rizzi, Anthony

    1992-01-01

    Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.

  5. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Fasanella, Giuseppe

    2016-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillating lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  6. High precision, low disturbance calibration system for the CMS Barrel Electromagnetic Calorimeter High Voltage apparatus

    Science.gov (United States)

    Fasanella, G.

    2017-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillation lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3%/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  7. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Science.gov (United States)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  8. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  9. High Voltage in Noble Liquids for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Rebel, B. [Fermilab; Bernard, E. [Yale U.; Faham, C. H. [LBL, Berkeley; Ito, T. M. [Los Alamos; Lundberg, B. [Maryland U.; Messina, M. [Columbia U.; Monrabal, F. [Valencia U., IFIC; Pereverzev, S. P. [LLNL, Livermore; Resnati, F. [Zurich, ETH; Rowson, P. C. [SLAC; Soderberg, M. [Fermilab; Strauss, T. [Bern U.; Tomas, A. [Imperial Coll., London; Va' vra, J. [SLAC; Wang, H. [UCLA

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  10. Maintenance Optimization of High Voltage Substation Model

    Directory of Open Access Journals (Sweden)

    Jan Gala

    2008-01-01

    Full Text Available The real system from practice is selected for optimization purpose in this paper. We describe the real scheme of a high voltage (HV substation in different work states. Model scheme of the HV substation 22 kV is demonstrated within the paper. The scheme serves as input model scheme for the maintenance optimization. The input reliability and cost parameters of all components are given: the preventive and corrective maintenance costs, the actual maintenance period (being optimized, the failure rate and mean time to repair - MTTR.

  11. History of high-voltage ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Singer, E.

    In principle, the feldspar porcelain used for making tableware way back in the 18th century already would have been good enough for electrical purposes, especially for making high-voltage insulators. Thus, further advances in that sector were made for reasons of economy and better process engineering. This would include things like improving the material's green workability. Then, in 1918, Gilchrist and Klinefelter called attention to property changes in the raw materials triangle kaolinquartz-feldspar. Additional glass matrix increases the finished material's dielectric strength, while a larger share of kaolin improves its heat resistance, and a mixture of quartz and feldspar adds more strength.

  12. Tuning the Effective Anisotropy in a Voltage-Susceptible Exchange-Bias Heterosystem

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    2017-03-01

    Voltage- and temperature-tuned ferromagnetic hysteresis is investigated by a superconducting quantum-interference device and Kerr magnetometry in a thin-film heterostructure of a perpendicular anisotropic Co/Pd ferromagnet exchange coupled to the magnetoelectric antiferromagnet Cr2O3 . An abrupt disappearance of exchange bias with a simultaneous more than twofold increase in coercivity is observed and interpreted as a competition between the effective anisotropy of Cr2O3 and the exchange-coupling energy between boundary magnetization and the adjacent ferromagnet. The effective anisotropy energy is given by the intrinsic anisotropy energy density multiplied by the effective volume separated from the bulk through a horizontal antiferromagnetic domain boundary. Kerr measurements show that the anisotropy of the interfacial Cr2O3 can be tuned isothermally and in the absence of an external magnetic field by application of an electric field. A generalized Meiklejohn-Bean model accounts for the change in exchange bias and coercivity as well as the asymmetric evolution of the hysteresis loop. In support of this model, the reversal of the boundary magnetization is experimentally confirmed as a contribution to the magnetic hysteresis loop.

  13. Single-artificial-atom lasing using a voltage-biased superconducting charge qubit

    Energy Technology Data Exchange (ETDEWEB)

    Ashhab, S; Johansson, J R; Zagoskin, A M; Nori, Franco [Frontier Research System, Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-0198 (Japan)], E-mail: ashhab@riken.jp

    2009-02-15

    We consider a system composed of a single artificial atom coupled to a cavity mode. The artificial atom is biased such that the most dominant relaxation process in the system takes the atom from its ground state to its excited state, thus ensuring population inversion. A recent experimental manifestation of this situation was achieved using a voltage-biased superconducting charge qubit. Even under the condition of 'inverted relaxation', lasing action can be suppressed if the 'relaxation' rate is larger than a certain threshold value. Using simple transition-rate arguments and a semiclassical calculation, we derive analytic expressions for the lasing suppression condition and the state of the cavity in both the lasing and suppressed-lasing regimes. The results of numerical calculations agree very well with the analytically derived results. We start by analyzing a simplified two-level-atom model, and we then analyze a three-level-atom model that should describe accurately the recently realized superconducting artificial-atom laser.

  14. Unlikely Combination of Experiments With a Novel High-Voltage CIGS Photovoltaic Array: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  15. Safe epoxy encapsulant for high voltage magnetics

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  16. Advanced High Voltage Power Device Concepts

    CERN Document Server

    Baliga, B Jayant

    2012-01-01

    Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device ...

  17. High-Voltage, Asymmetric-Waveform Generator

    Science.gov (United States)

    Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

    2008-01-01

    The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise

  18. High perfomance selectable value transportable high dc Voltage standard

    CERN Document Server

    Galliana, Flavio; Tet, Luca Roncaglione

    2016-01-01

    At National Institute of Metrological Research (INRIM), a selectable-value Transportable High dcVoltage Standard (THVS) operating in the range from 10 V to 100 V in steps of 10 V, was developed. This Standard was built to cover the lack of high level dc Voltage Standards at voltages higher than 10 V to employ as laboratory (local) or travelling Standards for Inter-Laboratory Comparisons (ILCs). A ground-mobile electronic technique was used to enhance the accuracy of the THVS at the higher values. The THVS shows better noise, better short-mid-term stability than top level dc Voltage and multifunction calibrators (MFCs) and better suitability and insensibility to be transported than these instruments. The project is extensible to 1000 V.

  19. Optimal planning of high voltage distribution substations

    Institute of Scientific and Technical Information of China (English)

    YU Yixin; YAN Xuefei; ZHANG Yongwu

    2007-01-01

    Aimed at solving the problem of optimal planning for high voltage distribution substations,an efficient method is put forward.The method divides the problem into two sub-problems:source locating and combinational optimization.The algorithm of allocating and locating alternatively (ALA) is widely used to deal with the source locating problem,but it is dependent on the initial location to a large degree.Thus,some modifications were made to the ALA algorithm,which could greatly improve the quality of solutions.In addition,considering the non-convex and nonconcave nature of the sub-problem of combinational optimization,the branch-and-bound technique was adopted to obtain or approximate a global optimal solution.To improve the efficiency of the branch-and-bound technique,some heuristic principles were proposed to cut those branches that may generate a global optimization solution with low probability.Examples show that the proposed algorithm meets the requirement of engineering and it is an effective approach to rapidly solve the problem of optimal planning for high voltage distribution substations.

  20. Influence of deposition temperature and bias voltage on the crystalline phase of Er{sub 2}O{sub 3} thin films deposited by filtered cathodic arc

    Energy Technology Data Exchange (ETDEWEB)

    Adelhelm, Christoph, E-mail: christoph.adelhelm@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Pickert, Thomas [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Koch, Freimut, E-mail: freimut.koch@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Balden, Martin; Jahn, Stephan [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Rinke, Monika [Forschungszentrum Karlsruhe, Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Maier, Hans [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany)

    2011-10-01

    Er{sub 2}O{sub 3} thin films on Eurofer steel substrates were produced by a filtered cathodic arc device, varying the substrate temperature (RT - 700 deg. C) and sample bias (0 to -450 V). The crystallographic phase was analyzed by X-ray diffraction and Raman spectroscopy. Deposition at {>=}600 deg. C without bias lead to solely formation of the cubic Er{sub 2}O{sub 3} phase. Thin films of the uncommon, monoclinic B-phase were prepared with a negative bias voltage of {>=}100 V at RT, and at temperatures {<=}500 deg. C for -250 V bias. The B-phase films exhibit a strongly textured film structure. Residual stress measurements show high compressive stress for B-phase films deposited at RT.

  1. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Obaidulla, SK. Md., E-mail: obaidulla20@gmail.com; Goswami, D. K., E-mail: xdipak@gmail.com, E-mail: dipak@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Giri, P. K., E-mail: giri@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India)

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  2. Influence of bias voltage on the optical and structural properties of nc-Si:H films grown by layer-by-layer (LBL) deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Tong, Goh Boon, E-mail: boontong77@yahoo.co [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Gani, Siti Meriam Ab.; Muhamad, Muhamad Rasat; Rahman, Saadah Abdul [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2009-07-01

    The effects of applying a positive bias of 25 to 100 V on the optical, structural and photoluminescence (PL) properties of hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL) deposition technique has been studied. Optical characterization of the films has been obtained from UV-VIS-NIR spectroscopy measurements. Structural characterization has been performed using X-ray diffraction, micro-Raman spectroscopy and field emission scanning electron microscope (FESEM). PL spectroscopy technique has been used to investigate the PL properties of the films. In general, the films formed shows a mixed phase of silicon (Si) nanocrystallites embedded within an amorphous phase of the Si matrix. The crystalline volume fraction and grain size of the Si nanocrystallites have been shown to be strongly dependent on the applied bias voltage. High applied bias voltage enhances the growth rate of the films but reduces the refractive index and the optical energy gap of the films. Higher crystalline volume fraction of the films prepared at low bias voltages exhibits room temperature PL at around 1.8 eV (700 nm).

  3. Program-Controlled High Voltage Module in Active Voltage Dividers(AVD) for MPGD

    CERN Document Server

    Ginting, Muhammad Fadhil

    2016-01-01

    Micro Pattern Gas Detectors (MPGD) applications are rapidly developing and became an important part of upgrades for the LHC detectors. RD51/CERN have worked on Active Voltage Divider (AVD) technology for multistage MPGDs, One of the next developments for the AVD is to design and integrate high voltage module in a single box. The Program-Controlled High Voltage Module, part of one AIDA2020 project, has been successfully designed and developed, and can be integrated in AVD design.

  4. High Voltage Power Transmission for Wind Energy

    Science.gov (United States)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  5. Transformerless DC-DC Converter Using Cockcroft-Walton Voltage Multiplier to Obtain High DC Voltage

    Directory of Open Access Journals (Sweden)

    Meghana G Naik,

    2014-11-01

    Full Text Available In the present scenario the use of transformer for high voltages in converter circuit reduces the overall operating efficiency due to leakage inductance and use of transformer also increases the operational cost. . Therefore the proposed system is implemented with transformer less DC-DC converter so as to obtain high DC voltage with the use of nine stage Cockcroft-Walton (CW voltage multiplier. The proposed converter operates in CCM (continuous conduction mode, so that the converter switch stress, the switching losses are reduced. The DC voltage at the input of the proposed model is low and is boosted up by boost inductor (Ls in DC-DC converter stage and performs inverter operation. The number of stages in CW-voltage multiplier circuit is applied with low input pulsating DC (AC Voltage voltage where it is getting converted to high DC output voltage. The proposed converter switches operates at two independent frequencies, modulating (fsm andalternating (fsc frequency. The fsm operates at higher frequency of the output while the fsc operates at lower frequency of the desired output voltage ripple and the output ripples can be adjusted by the switch Sc1 and Sc2. The regulation of the output voltage is achieved by controlling the Duty ratio.The simulation is carried over by the MATLABSIMULINK.

  6. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne Johan; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1) con

  7. Influence of Negative Bias Voltage on the Mechanical and Tribological Properties of MoS2/Zr Composite Films

    Institute of Scientific and Technical Information of China (English)

    SONG Wenlong; DENG Jianxin; YAN Pei; WU Ze; ZHANG Hui; ZHAO dun; AI Xing

    2011-01-01

    MoS2/Zr composite films were deposited on the cemented carbide YT 14 (WC+14%TiC+6%Co)by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques. The influence of negative bias voltage on the composite film properties, including adhesion strength, micro-hardness, thickness and tribological properties were investigated. The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films. The effects of negative bias voltage on film properties were also put forward. The optimal negative bias voltage was -200 V under this experiment conditions. The obtained composite films were dense, the adhesion strength was about 60 N, the thickness was about 2.4 μm, and the micro-hardness was about 9.0 GPa. The friction coefficient and wear rate was 0.12 and 2. 1 x 10-7 cm/3N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev · min 1.

  8. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  9. HIGH VOLTAGE SAFETY MANAGEMENT SYSTEM OF ELECTRIC VEHICLE

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In order to improve the drivability and energy efficiency of electric vehicle (EV), more and more batteries are connected in series with high voltage which makes it necessary to monitor the electric parameters of high voltage system (HVS) to ensure the high voltage safety. A high voltage safety management system is developed to solve this critical issue. Several key electric parameters including pre-charge, contact resistance, insulation resistance and remaining capacity are monitored and analyzed based on the presented equivalent models. An electronic unit called high voltage safety controller is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated and the on-line electric parameters monitor strategy is discussed. The real vehicle experiment results indicate that the high voltage safety management system designed is suitable for EV application.

  10. Plasma Interaction with International Space Station High Voltage Solar Arrays

    Science.gov (United States)

    Heard, John W.

    2002-01-01

    The International Space Station (ISS) is presently being assembled in low-earth orbit (LEO) operating high voltage solar arrays (-160 V max, -140 V typical with respect to the ambient atmosphere). At the station's present altitude, there exists substantial ambient plasma that can interact with the solar arrays. The biasing of an object to an electric potential immersed in plasma creates a plasma "sheath" or non-equilibrium plasma around the object to mask out the electric fields. A positively biased object can collect electrons from the plasma sheath and the sheath will draw a current from the surrounding plasma. This parasitic current can enter the solar cells and effectively "short out" the potential across the cells, reducing the power that can be generated by the panels. Predictions of collected current based on previous high voltage experiments (SAMPIE (Solar Array Module Plasma Interactions Experiment), PASP+ (Photovoltaic Array Space Power) were on the order of amperes of current. However, present measurements of parasitic current are on the order of several milliamperes, and the current collection mainly occurs during an "eclipse exit" event, i.e., when the space station comes out of darkness. This collection also has a time scale, t approx. 1000 s, that is much slower than any known plasma interaction time scales. The reason for the discrepancy between predictions and present electron collection is not understood and is under investigation by the PCU (Plasma Contactor Unit) "Tiger" team. This paper will examine the potential structure within and around the solar arrays, and the possible causes and reasons for the electron collection of the array.

  11. RICH High Voltages & PDF Analysis @ LHCb

    CERN Multimedia

    Fanchini, E

    2009-01-01

    In the LHCb experiment an important issue is the identification of the hadrons of the final states of the B mesons decays. Two RICH subdetectors are devoted to this task, and the Hybrid Photon Detectors (HPDs) are the photodetectors used to detect Cherenkov light. In this poster there is a description of how the very high voltage (-18 KV) supply stability used to power the HPDs is monitored. It is also presented the basics of a study which can be done with the first collision data: the analysis of the dimuons from the Drell-Yan process. This process is well known and the acceptance of the LHCb detector in terms of pseudorapidity will be very useful to improve the knowledge of the proton structure functions or, alternatively, try to estimate the luminosity from it.

  12. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    , and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. In chapter 2, a review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning...

  13. Energy Storage Options for Voltage Support in Low-Voltage Grids with High Penetration of Photovoltaic

    DEFF Research Database (Denmark)

    Marra, Francesco; Tarek Fawzy, Y.; Bülo, Thorsten

    2012-01-01

    The generation of power by photovoltaic (PV) systems is constantly increasing in low-voltage (LV) distribution grids, in line with the European environmental targets. To cope with the effects on grid voltage profiles during high generation and low demand periods, new solutions need to be establis...

  14. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    Science.gov (United States)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  15. Advances in high voltage power switching with GTOs

    Energy Technology Data Exchange (ETDEWEB)

    Podlesak, T.F. (US Army Electronic Technology and Devices Lab., Fort Monmouth, NJ (US)); McMurray, J.A. (Vitronics, Eatontown, NJ (US)); Carter, J.L.

    1990-12-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. A high voltage opening switch has been successfully demonstrated in our laboratory. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This paper reports on this demonstration system that is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly.

  16. LED-Based High-Voltage Lines Warning System

    Directory of Open Access Journals (Sweden)

    Eldar MUSA

    2013-04-01

    Full Text Available LED-based system, running with the current of high-voltage lines and converting the current flowing through the line into the light by using a toroid transformer, has been developed. The transformer’s primary winding is constituted by the high voltage power line. Toroidal core consists of two equal parts and the secondary windings are evenly placed on these two parts. The system is mounted on the high-voltage lines as a clamp. The secondary winding ends are connected in series by the connector on the clamp. LEDs are supplied by the voltage at the ends of secondary. Current flowing through highvoltage transmission lines is converted to voltage by the toroidal transformer and the light emitting LEDs are supplied with this voltage. The theory of the conversion of the current flowing through the line into the light is given. The system, running with the current of the line and converting the current into the light, has been developed. System has many application areas such as warning high voltage lines (warning winches to not hinder the high-voltage lines when working under the lines, warning planes to not touch the high-voltage lines, remote measurement of high-voltage line currents, and local illumination of the line area

  17. High Voltage Applications of Explosively Formed Fuses

    Science.gov (United States)

    Tasker, D. G.; Goforth, J. H.; Fowler, C. M.; Herrera, D. H.; King, J. C.; Lopez, E. A.; Martinez, E. C.; Oona, H.; Marsh, S. P.; Reinovsky, R. E.; Stokes, J.; Tabaka, L. J.; Torres, D. T.; Sena, F. C.; Kiuttu, G.; Degnan, J.

    2004-11-01

    At Los Alamos, we have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19-25 MA, thus diverting the current to low inductance loads. The transferred current magnitude is determined by the ratio of storage inductance to load inductance and, with dynamic loads, the current has ranged from 12-20 MA. In a system with 18 MJ stored energy, the switch operates at a power of up to 6 TW. We are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems we are exploring circuits with EFF lengths from 43-100 cm, which have storage inductances large enough to apply 300-500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing ~200 kV. This indicates the switch had an effective resistance of ~100 mΩ where 150-200 mΩ was expected. To understand the lower performance, several parameters were studied including electrical conduction through the explosive products; current density; explosive initiation; insulator type and conductor thickness. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 1-10 μs time scale with resistances starting at 50 μΩ and increasing to perhaps 1 Ω now seem possible to construct using explosive charges as small as a few pounds.

  18. Computer Controlled High Precise,High Voltage Pules Generator

    Institute of Scientific and Technical Information of China (English)

    但果; 邹积岩; 丛吉远; 董恩源

    2003-01-01

    High precise, high voltage pulse generator made up of high-power IGBT and pulse transformers controlled by a computer are described. A simple main circuit topology employed in this pulse generator can reduce the cost meanwhile it still meets special requirements for pulsed electric fields (PEFs) in food process. The pulse generator utilizes a complex programmable logic device (CPLD) to generate trigger signals. Pulse-frequency, pulse-width and pulse-number are controlled via RS232 bus by a computer. The high voltage pulse generator well suits to the application for fluid food non-thermal effect in pulsed electric fields, for it can increase and decrease by the step length 1.

  19. Substrate bias voltage and deposition temperature dependence on properties of rf-magnetron sputtered titanium films on silicon (100)

    Indian Academy of Sciences (India)

    B Geetha Priyadarshini; Shampa Aich; Madhusudan Chakraborty

    2014-12-01

    Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of process variables on their structural and functional properties. One such study based on the influence of substrate conditions viz. substrate-bias voltage and substrate temperature on the structural and morphological properties, could be of great interest as far as Ti thin films are concerned. From X-ray texture pole figure and electron microscopy analysis, it was found that substrate bias voltage strongly influence preferential orientation and morphology of Ti films grown on Si (100) substrate. Deposition at higher substrate temperature causes the film to react with Si forming silicides at the film/Si substrate interface. Ti film undergoes a microstructural transition from hexagonal plate-like to round-shaped grains as the substrate temperature was raised from 300 to 50 °C during film deposition.

  20. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  1. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    Energy Technology Data Exchange (ETDEWEB)

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  2. An Optoelectronic High-voltage Probe for Measuring Impulse Voltage Distribution of HVDC Converter Valve

    Institute of Scientific and Technical Information of China (English)

    方志; 邱毓昌

    2007-01-01

    A high-voltage optoelectronic probe is developed for measuring impulse voltage distribution along thyristor units in the HVDC converter valve. The dimension of the resistive voltage divider is optimized by means of numerical compttation of electric field. A pulse frequency modulation (PFM) mode is adopted for the data transmission link because of its immunity to high-intensity electromagnetic interference. Experimental results indicate that the linearity deviation for the whole measuring system is within ± 0.15 %, and therefore it can meet requirements specified by IEC60700-1.

  3. Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

    Directory of Open Access Journals (Sweden)

    Shojiro Miyake

    2014-01-01

    Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

  4. Challenges for High Voltage Testing of UHV Equipment

    Institute of Scientific and Technical Information of China (English)

    Ernst Gockenbach

    2011-01-01

    The increase of voltage level for AC and DC transmission systems requires some changes in the high voltage testing for Ultra High Voltage (UHV) equipment. After a short description of the coordination work in the standard- ization bodies the requirements for UHV equipment are mentioned. The main points concerning high voltage testing of UHV equipment are the impulse shape of standard lightning impulse voltage, the evaluation of the test voltage for impulses with oscillations or overshoot near the peak and the time parameter of switching impulses. The linearity check of the measuring devices, the proximity effect, the wet tests and the atmospheric correction factors are further points to be discussed concerning testing of UHV equipment.

  5. The effect of gas mixing and biased disc voltage on the preglow transient of electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Tarvainen, O.; Toivanen, V.; Komppula, J.; Kalvas, T.; Koivisto, H. [Department of Physics, University of Jyvaeskylae, Jyvaeskylae 40500 (Finland)

    2012-02-15

    The effect of gas mixing and biased disc voltage on the preglow of electron cyclotron resonance ion source plasma has been studied with the AECR-U type 14 GHz ion source. It was found that gas mixing has a significant effect on the preglow. The extracted transient beam currents and efficiency of the heavier species increase, while the currents and efficiency of the lighter species decrease when gas mixing is applied. The effect of the biased disc was found to be pronounced in continuous operation mode in comparison to preglow. The data provide information on the time scales of the plasma processes explaining the effects of gas mixing and biased disc. The results also have implications on production of radioactive ion beams in preglow mode for the proposed Beta Beam neutrino factory.

  6. High voltage switches having one or more floating conductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  7. Study of High Voltage AC Underground Cable Systems

    DEFF Research Database (Denmark)

    da Silva, Filipe Miguel Faria; Bak, Claus Leth; Wiechowski, Wojciech T.

    2010-01-01

    High-Voltage cables are starting to be more often used to transmit electric energy at high-voltage levels, introducing in the electric grid phenomena that are uncommon when using Overhead Lines. Under the phenomena worthy of special attention are those related with the cable energisation and deen...

  8. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  9. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  10. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  11. Electrical system architecture having high voltage bus

    Science.gov (United States)

    Hoff, Brian Douglas [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  12. Living and Working Safely Around High-Voltage Power Lines.

    Energy Technology Data Exchange (ETDEWEB)

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  13. Planar LTCC transformers for high voltage flyback converters.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  14. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  15. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  16. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  17. COTS Li-Ion Cells in High Voltage Batteries

    Science.gov (United States)

    Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

    2003-01-01

    Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

  18. Dependence of the electrical and optical properties on the bias voltage for ZnO:Al films deposited by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hyeong [School of Electronics and Information Engineering, Kunsan National University, Kunsan (Korea, Republic of)], E-mail: jhyi@kunsan.ac.kr; Song, Jun-Tae [School of Information and Communication Engineering, Sungkyunkwan University, Suwon (Korea, Republic of)

    2008-02-15

    Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited on glass, polycarbonate (PC), and polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The substrate dc bias voltage varied from 0 V to 50 V. Structural, electrical and optical properties of the films were investigated. The deposition rate of ZnO:Al films on glass substrate initially increased with the bias voltage, and then decreased with further increasing bias voltage. It was found that the best films on glass substrate with a low as 6.2 x 10{sup -4} {omega} cm and an average transmittance over 80% at the wavelength range of 500-900 nm can be obtained by applying the bias voltage of 30 V. The properties of the films deposited on polymer substrate, such as PC and PET, have a similar tendency, with slightly inferior values to those on glass substrate.

  19. Switchgear installations for extremely high voltages

    Energy Technology Data Exchange (ETDEWEB)

    Muller, M.; Stepinski, B.

    1964-01-01

    The methods by which 750-kV installations can be economically constructed are described. Besides the choice of phase distances and conductors, the possible layouts and circuitry are dealt with and illustrated by results obtained from the basic studies of 750-kV equipment. In conclusion, a comparison of costs is made, both for the individual components and for the overall financial outlay for the arrangements considered; the total and itemized costs of compounds for voltages of 245 to 750 kV according to the present state of the art are also discussed.

  20. High-voltage air-core pulse transformers

    Energy Technology Data Exchange (ETDEWEB)

    Rohwein, G. J.

    1981-01-01

    General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

  1. High voltage high repetition rate pulse using Marx topology

    Science.gov (United States)

    Hakki, A.; Kashapov, N.

    2015-06-01

    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  2. Highly-Efficient and Modular Medium-Voltage Converters

    Science.gov (United States)

    2015-09-28

    4. TITLE AND SUBTITLE Highly-Efficient and Modula Medium -Voltage Converters 6. AUTHOR(S) Maryam Saeedifard 7. PERFORMING ORGANIZATIC i NAME(S...realization of highly efficient, modular medium - voltage dc-ac and dc-dc energy conversion systems by development of new control strategies that improve the...Z39.18 a 01^ 100(0^5 Final Report for Grant N00014-14-1-0615 Highly-Efficient and Modular Medium -Voltage Converters Lead Organization: Georgia Tech

  3. System for instrumenting and manipulating apparatuses in high voltage

    Science.gov (United States)

    Jordan, Kevin

    2016-06-07

    A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

  4. Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Jinlong Jiang

    2014-01-01

    Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

  5. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe (001 ) junctions: Comparative study with Fe/MgO/Fe(001) junctions

    Science.gov (United States)

    Masuda, Keisuke; Miura, Yoshio

    2017-08-01

    We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl 2O 4 /Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's function method and the density functional theory, we calculate bias voltage dependencies of magnetoresistance (MR) ratios in both the MTJs. We find that in both the MTJs, the MR ratio decreases as the bias voltage increases and finally vanishes at a critical bias voltage Vc. We also find that the critical bias voltage Vc of the MgAl 2O 4 -based MTJ is clearly larger than that of the MgO-based MTJ. Since the in-plane lattice constant of the Fe/MgAl 2O 4 /Fe(001) supercell is twice that of the Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl 2O 4 -based MTJs have an identical band structure to that obtained by folding the Fe band structure of the MgO-based MTJs in the Brillouin zone of the in-plane wave vector. We show that such a difference in the Fe band structure is the origin of the difference in the critical bias voltage Vc between the MgAl 2O 4 - and MgO-based MTJs.

  6. Recursive bias estimation for high dimensional smoothers

    Energy Technology Data Exchange (ETDEWEB)

    Hengartner, Nicolas W [Los Alamos National Laboratory; Matzner-lober, Eric [UHB, FRANCE; Cornillon, Pierre - Andre [INRA

    2008-01-01

    In multivariate nonparametric analysis, sparseness of the covariates also called curse of dimensionality, forces one to use large smoothing parameters. This leads to biased smoothers. Instead of focusing on optimally selecting the smoothing parameter, we fix it to some reasonably large value to ensure an over-smoothing of the data. The resulting smoother has a small variance but a substantial bias. In this paper, we propose to iteratively correct the bias initial estimator by an estimate of the latter obtained by smoothing the residuals. We examine in detail the convergence of the iterated procedure for classical smoothers and relate our procedure to L{sub 2}-Boosting. We apply our method to simulated and real data and show that our method compares favorably with existing procedures.

  7. Effect of bias voltage on tunneling mechanism in Co{sub 40}Fe{sub 40}B{sub 20}/MgO/Co{sub 40}Fe{sub 40}B{sub 20} pseudo-spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Yıldırım, Mustafa; Öksüzoğlu, Ramis Mustafa, E-mail: rmoksuzoglu@anadolu.edu.tr

    2015-04-01

    Bias voltage dependence of tunneling mechanism has been systematically investigated in Co{sub 40}Fe{sub 40}B{sub 20} (2.1 nm)/MgO (2 nm)/Co{sub 40}Fe{sub 40}B{sub 20} (1.7 nm) pseudo-spin valve magnetic tunnel junction deposited using the combination of the pulsed DC unbalanced magnetron and RF magnetron sputtering techniques. Structural investigations revealed polycrystalline and partially (001) oriented growth of CoFeB/MgO(001) MTJ with similar low interface roughness on both side of the MgO barrier. The junction with a 25×25 µm{sup 2} area indicates a giant tunnel magnetoresistance in the order of 505% at room temperature. The magnetoresistance ratio decreases with increasing applied bias voltage ranging from 0.5 to 1.8 V. Reasonable values for barrier thickness and heights were obtained using the combination of Brinkman and Gundlach models, including average barrier height and symmetry. Both barrier parameters and the tunneling mechanism vary in dependence of applied bias voltage. The tunneling mechanism indicates a change from direct to the FN tunneling, especially when reaching high bias voltages. Effect of the tunneling mechanism on the bias dependence of the magnetoresistance was also discussed. - Highlights: • Polycrystalline and partially (001) oriented CoFeB/MgO MTJ with similar interface roughness was produced. • TMR ratio of 505% was obtained at room temperature, decreasing with increasing bias. • Similar interface roughness with low barrier asymmetry results in high TMR ratio. • Tunneling mechanism changes from direct to Fowler–Nordheim for applied biases >0.8 V. • Bias dependence of TMR is correlated with change of the tunneling mechanism.

  8. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analyse

  9. Enhanced Model of Nonlinear Spiral High Voltage Divider

    Directory of Open Access Journals (Sweden)

    V. Panko

    2015-04-01

    Full Text Available This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

  10. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  11. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    This paper presents a high voltage DC-DC converter topology for bi-directional energy transfer between a low voltage DC source and a high voltage capacitive load. The topology is a bi-directional flyback converter with variable switching frequency control during the charge mode, and constant...... switching frequency control during the discharge mode. The converter is capable of charging the capacitive load from 24 V DC source to 2.5 kV, and discharges it to 0 V. The flyback converter has been analyzed in detail during both charge and discharge modes, by considering all the parasitic elements...... in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...

  12. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  13. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  14. High performance dc-dc conversion with voltage multipliers

    Science.gov (United States)

    Harrigill, W. T.; Myers, I. T.

    1974-01-01

    The voltage multipliers using capacitors and diodes first developed by Cockcroft and Walton in 1932 were reexamined in terms of state of the art fast switching transistors and diodes, and high energy density capacitors. Because of component improvements, the voltage multiplier, used without a transformer, now appears superior in weight to systems now in use for dc-dc conversion. An experimental 100-watt 1000-volt dc-dc converter operating at 100 kHz was built, with a component weight of about 1 kg/kW. Calculated and measured values of output voltage and efficiency agreed within experimental error.

  15. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    Science.gov (United States)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  16. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature.

    Science.gov (United States)

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-01

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.

  17. High-frequency high-voltage high-power DC-to-DC converters

    Science.gov (United States)

    Wilson, T. G.; Owen, H. A.; Wilson, P. M.

    1982-01-01

    A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

  18. Planar LTCC transformers for high voltage flyback converters: Part II.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENTechnology, Inc., Watertown, SD); Schare, Joshua M., Ph.D.; Slama, George (NASCENTechnology, Inc., Watertown, SD); Abel, David (NASCENTechnology, Inc., Watertown, SD)

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  19. On-chip High-Voltage Generator Design

    CERN Document Server

    Tanzawa, Toru

    2013-01-01

    This book describes high-voltage generator design with switched-capacitor multiplier techniques.  The author provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.   ·         Shows readers how to design charge pump circuits with lower voltage operation, higher power efficiency, and smaller circuit area; ·         Describes comprehensive circuits and systems design of on-chip high-voltage generators; ·         Covers all the component circuit blocks, including charge pumps, pump regulators, level shifters, oscillators, and references.

  20. Reliability and Characterization of High Voltage Power Capacitors

    Science.gov (United States)

    2014-03-01

    ix LIST OF FIGURES Figure 1.   System level overview of IPC EVCS (from [3]). ..............................................2   Figure 2...permittivity EVCS electric vehicle charging system GPIB general-purpose interface bus GW giga-watt HVST high voltage stress test IV current voltage...Power Converter (IPC). This converter is being used for the Electric Vehicle Charging Station ( EVCS ), currently being investigated and installed in

  1. A New Phase-Shifted Cascade High Voltage Inverter

    Institute of Scientific and Technical Information of China (English)

    Lau Eng Tin

    2005-01-01

    This paper presents a unique novel design of the phase-shifted cascade high voltage inverter. Thehigh voltage inverter utilizes fewer power switches and supplies a balance load. The usage of phase shifttransformer and phase shifting SPWM ensures that input and output harmonic wave content is low and outputvoltage change (du/dt) has a low rate, meeting all the requirements of the power authorities. The most out-standing feature is the energy saving with very fast cost recovery.

  2. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor

    Institute of Scientific and Technical Information of China (English)

    HE JinLiang; HU Jun; MENG BoWen; ZHANG Bo; ZHU Bin; CHEN ShuiMing; ZENG Rong

    2009-01-01

    The surge arrestor with excellent protection characteristics would decrease the overvoltage level ap-plied on the power apparatus to reduce their insulation levels and manufacturing bottleneck. The ar-restor for the 1000-kV ultra-high voltage ac power transmission system is designed as tank-type structure. The field-circuit combination numerical method combining the three-dimensional finite ele-ment method with circuit is proposed to analyze the potential distribution of GIS arrester. By comparing several design schemes, the most effective method to improve the potential distribution along the varistor column is to increase the voltage gradient of the ZnO varistor. Synthesizing several influential factors, the suitable voltage gradient of ZnO varistor should be controlled to 435 V/mm, and the re-sulted nonuniform degree of the potential distribution along the varistor column inside the GIS arrestor would be controlled smaller than 10%. The result in this paper provides the fundamental technical in-dex for the study of the high voltage gradient ZnO varistors.

  3. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The surge arrester with excellent protection characteristics would decrease the overvoltage level ap- plied on the power apparatus to reduce their insulation levels and manufacturing bottleneck. The arrester for the 1000-kV ultra-high voltage ac power transmission system is designed as tank-type structure. The field-circuit combination numerical method combining the three-dimensional finite element method with circuit is proposed to analyze the potential distribution of GIS arrester. By comparing several design schemes, the most effective method to improve the potential distribution along the varistor column is to increase the voltage gradient of the ZnO varistor. Synthesizing several influential factors, the suitable voltage gradient of ZnO varistor should be controlled to 435 V/mm, and the resulted nonuniform degree of the potential distribution along the varistor column inside the GIS arrester would be controlled smaller than 10%. The result in this paper provides the fundamental technical index for the study of the high voltage gradient ZnO varistors.

  4. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    Energy Technology Data Exchange (ETDEWEB)

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  5. Dynamical Localization in a Two-Electron Quantum Dot Molecule Biased by a dc Voltage

    Institute of Scientific and Technical Information of China (English)

    王立民; 段素青; 赵宪庚; 刘承师; 马本堃

    2003-01-01

    We study the dynamics of two interacting electrons in a coupled-quantum-dot system with a time-dependent external electric field. The numerical results of the two-particle states reveal that the dynamical localization still exists under appropriate dc and ac voltage amplitudes. Such localization is different from the stationary localization phenomenon. Our conclusion is instructive for the field of quantum function devices.

  6. Probing the bias of radio sources at high redshift

    CSIR Research Space (South Africa)

    Passmoor, S

    2012-11-01

    Full Text Available The relationship between the clustering of dark matter and that of luminous matter is often described using the bias parameter. Here, we provide a new method to probe the bias of intermediate-to-high-redshift radio continuum sources for which...

  7. Effects of DC bias on magnetic performance of high grades grain-oriented silicon steels

    Science.gov (United States)

    Ma, Guang; Cheng, Ling; Lu, Licheng; Yang, Fuyao; Chen, Xin; Zhu, Chengzhi

    2017-03-01

    When high voltage direct current (HVDC) transmission adopting mono-polar ground return operation mode or unbalanced bipolar operation mode, the invasion of DC current into neutral point of alternating current (AC) transformer will cause core saturation, temperature increasing, and vibration acceleration. Based on the MPG-200D soft magnetic measurement system, the influence of DC bias on magnetic performance of 0.23 mm and 0.27 mm series (P1.7=0.70-1.05 W/kg, B8>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically realized in this paper. For the high magnetic induction GO steels (core losses are the same), greater thickness can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed. Finally, the magnetostriction and A-weighted magnetostriction velocity level of GO steel under DC biased magnetization were researched.

  8. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Science.gov (United States)

    2010-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad tracks...

  9. Temperature Stabilized Characterization of High Voltage Power Supplies

    CERN Document Server

    Krarup, Ole

    2017-01-01

    High precision measurements of the masses of nuclear ions in the ISOLTRAP experiment relies on an MR-ToF. A major source of noise and drift is the instability of the high voltage power supplies employed. Electrical noise and temperature changes can broaden peaks in time-of-flight spectra and shift the position of peaks between runs. In this report we investigate how the noise and drift of high-voltage power supplies can be characterized. Results indicate that analog power supplies generally have better relative stability than digitally controlled ones, and that the high temperature coefficients of all power supplies merit efforts to stabilize them.

  10. High voltage switch triggered by a laser-photocathode subsystem

    Science.gov (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  11. Voltage source inverters for high power, variable-voltage DC power sources

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z. [Department of Engineering and Technology, De Montfort University, Queens Building, The Gateway, Leicester, LE1 9BH, (United Kingdom); Spooner, E. [School of Engineering, University of Durham, Science Laboratories, South Rd, Durham, DRI 3LE, (United Kingdom)

    2001-09-01

    The paper discusses the applications of voltage source inverter (VSI) based power electronic systems for interfacing variable-voltage DC sources to the grid. A variable-speed wind power conversion system is used for illustration, where the VSI-based interface needs to convert a variable DC voltage to a nearly constant AC voltage with high-quality power. The power control principles of VSI are described. Various system configurations and switching strategies are examined by analysis, simulation and experimental methods. It is shown that better utilisation of semiconductors and more flexible control may be achieved by using a separately controlled DC link, rather than a directly connected VSI that has to operate at a lower modulation ratio at higher power. In some cases, multipulse inverter structures may be preferred, despite higher component count, because of reduced switching losses, fault tolerance and the absence of filters. The solutions developed in the study could be applied at a different scale to other renewable energy sources, such as wave or solar photovoltaic devices. (Author)

  12. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  13. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    Science.gov (United States)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  14. Bias voltage dependence of molecular orientation of dialkyl ketone and fatty acid alkyl ester at the liquid–graphite interface

    Energy Technology Data Exchange (ETDEWEB)

    Hibino, Masahiro, E-mail: hibino@mmm.muroran-it.ac.jp [Department of Applied Sciences, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Tsuchiya, Hiroshi [Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

    2014-10-30

    Graphical abstract: - Highlights: • Self-assembled monolayers (SAMs) of 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) were formed on a graphite surface at the liquid–solid interface. • Orientations of the molecules in SAMs on the substrate were studied by scanning tunneling microscopy. • A perpendicular carbon skeleton-plane orientation with the CO pointing up on the surface is favorable for a substrate with negative charge and vice versa. - Abstract: Molecular orientations of self-assembled 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) monolayers adsorbed on a graphite surface were studied by scanning tunneling microscopy (STM) at the liquid–solid interface. At a positive sample bias, the central areas of the dialkyl ketone and fatty acid alkyl ester molecules in the STM images appeared as two bright regions on both sides of a dim spot and a bright region on one side of a dim spot, whereas at a negative sample bias, the areas appeared dim. This contrast variation indicates that a perpendicular carbon skeleton-plane orientation with the CO pointing down on the surface is favorable for a substrate with positive charge and vice versa because of the greater electronegativity of the oxygen atom. Upon the bias voltage reversal, the delay time for the STM image contrast change in the region was observed on a time scale of minutes. The difference between the delay time lengths for the direction of bias polarity change indicates that the perpendicular configuration with CO pointing up is more stable than that with CO pointing down. These results indicate that the use of an electric field along a direction vertical to the monolayer on the substrate provides control over the orientations of the molecules between two stable states at the liquid–solid interface.

  15. An optical remote controlled high voltage dome for electron microscopes

    Energy Technology Data Exchange (ETDEWEB)

    Ruan, S. [The Enrico Fermi Institute, The University of Chicago, Chicago, Illinois 60637 (United States); Kapp, O.H. [The Department of Radiology and the Enrico Fermi Institute, The University of Chicago, Chicago, Illinois 60637 (United States)

    1995-08-01

    A low cost high voltage dome has been completed for an electron microscope with a thermal emission tip as electron source. Two fibers are used to provide communication across the high electrical field zone between the computer and the dome. This system provides a reliable method to operate the dome circuitry (floating at high voltage) and ensures the safety of both the computer system and the operator. Because of the application of ``dummy`` serial data transfer, the least number of fibers and associated components are used, providing a relatively low-cost solution to this problem. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  16. A design of High-precision High-Voltage Fiber-Optic Analog Signal Isolation Converter

    Institute of Scientific and Technical Information of China (English)

    李建伟; 许留伟; 刘小宁; 杨雷

    2002-01-01

    This paper introduces a design of high-prectison high-voltage fiber-optic analog sig-nal isoaltion converter based on the technology of Voltage-to-Fequency (V/F)and Frequency -to Voltage(F/V) conversion It describes the principle ,system configuration and hardware design

  17. High-voltage pulsed generator for dynamic fragmentation of rocks.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  18. OFDM-based Low-voltage Powerline High Rate Communication

    Institute of Scientific and Technical Information of China (English)

    ZHANG You-bing(张有兵); CHENG Shi-jie(程时杰); Joseph Nguimbis; XIONG Lan(熊兰)

    2004-01-01

    Based on the experimental results, a simplified model for low-voltage powerline used as a high frequency communication channel is presented. With this model, the Orthogonal Frequency Division Multiplexing (OFDM) based high rate digital communication over low-voltage powerline is analyzed and simulated. The capability of thc signal transmission system in overcoming multi-path interference and selection of the system parameters are discussed. And time-domain simulation is carried out to investigate the transmission capability of the OFDM cammunication system for different mapping schemes and transmission power levels. Simulation results show that it is possible to realize high rate digital communication over iow-voltage powerliue using OFDM when the transmitted power is large enough.

  19. High-voltage live cleaning robot design based on security

    Institute of Scientific and Technical Information of China (English)

    XIE Xiao-peng; XIA Hong-wei; YANG Ru-qing

    2005-01-01

    High-Voltage Live Cleaning Robot works in a hot-line environment (220 kV/330 kV), and so the safety of its application and equipment is most important. In terms of safety, the designs of robot mechanism and control system have been discussed, and the test data are given regarding the control system of a model machine. The model machine of a high-voltage live cleaning robot can satisfy the needs of basic cleaning in common conditions. From manual operation to automation, the cleaning efficiency is improved. The robot can decrease the amount of work, and guarantee security. Among high-voltage live cleaning equipment in China, the cleaning robot is advanced in automation and intelligence.

  20. Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Kugler, Zoe, E-mail: zkugler@physik.uni-bielefeld.d [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany); Drewello, Volker; Schaefers, Markus; Schmalhorst, Jan; Reiss, Guenter; Thomas, Andy [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany)

    2011-01-15

    Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

  1. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  2. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  3. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger;

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  4. Electric Insulation Detection Method for High-voltage Insulators

    Directory of Open Access Journals (Sweden)

    Wang Jiajun

    2013-07-01

    Full Text Available The principle of partial discharge detection is that through partial bridged discharge under high voltage electric field, it detects the inner air-filled cavity of high-voltage insulators. And it is a nondestructive detection method based on discharge magnitude to judge the insulation quality. The detecting system that adopts the partial discharge detection is more rigorous than testing system for electricity products, which must have small discharge capacity and higher sensitivity. This paper describes the principles of partial discharge detection and analysis insulation detection.

  5. High voltage pulsed cable design: a practical example

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Boicourt, G.P.

    1979-01-01

    The design of optimum high voltage pulse cable is difficult because very little emperical data are available on performance in pulsed applications. This paper follows the design and testing of one high voltage pulse cable, 40/100 trigger cable. The design was based on an unproven theory and the impressive outcome lends support to the theory. The theory is outlined and it is shown that there exists an inductance which gives a cable of minimum size for a given maximum stress. Test results on cable manufactured according to the design are presented and compared with the test results on the cable that 40/100 replaces.

  6. High-voltage, high-current, solid-state closing switch

    Energy Technology Data Exchange (ETDEWEB)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  7. Digitally Programmable High-Q Voltage Mode Universal Filter

    Directory of Open Access Journals (Sweden)

    D. Singh

    2013-12-01

    Full Text Available A new low-voltage low-power CMOS current feedback amplifier (CFA is presented in this paper. This is used to realize a novel digitally programmable CFA (DPCFA using transistor arrays and MOS switches. The proposed realizations nearly allow rail-to-rail swing capability at all the ports. Class-AB output stage ensures low power dissipation and high current drive capability. The proposed CFA/ DPCFA operates at supply voltage of ±0.75 V and exhibits bandwidth better than 95 MHz. An application of the DPCFA to realize a novel voltage mode high-Q digitally programmable universal filter (UF is given. Performances of all the proposed circuits are verified by PSPICE simulation using TSMC 0.25μm technology parameters.

  8. Cardiac stimulation with high voltage discharge from stun guns.

    Science.gov (United States)

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-05-20

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart.

  9. High Voltage Operation of Helical Pulseline Structures for Ion Acceleration

    CERN Document Server

    Waldron, William; Reginato, Lou

    2005-01-01

    The basic concept for the acceleration of heavy ions using a helical pulseline requires the launching of a high voltage traveling wave with a waveform determined by the beam transport physics in order to maintain stability and acceleration.* This waveform is applied to the front of the helix, creating over the region of the ion bunch a constant axial acceleration electric field that travels down the line in synchronism with the ions. Several methods of driving the helix have been considered. Presently, the best method of generating the waveform and also maintaining the high voltage integrity appears to be a transformer primary loosely coupled to the front of the helix, generating the desired waveform and achieving a voltage step-up from primary to secondary (the helix). This can reduce the drive voltage that must be brought into the helix enclosure through the feedthroughs by factors of 5 or more. The accelerating gradient is limited by the voltage holding of the vacuum insulator, and the material and helix g...

  10. High Input Impedance Voltage-Mode Biquad Filter Using VD-DIBAs

    Directory of Open Access Journals (Sweden)

    W. Jaikla

    2014-09-01

    Full Text Available This paper deals with a single-input multiple-output biquadratic filter providing three functions (low-pass, high-pass and band-pass based on voltage differencing differential input buffered amplifier (VD-DIBA. The quality factor and pole frequency can be electronically tuned via the bias current. The proposed circuit uses two VD-DIBAs and two grounded capacitors without any external resistors, which is suitable to further develop into an integrated circuit. Moreover, the circuit possesses high input impedance, providing easy voltage-mode cascading. It is shown that the filter structure can be easily extended to multi-input filter without any additional components, providing also all-pass and band-reject properties. The PSPICE simulation and experimental results are included, verifying the key characteristics of the proposed filter. The given results agree well with the theoretical presumptions.

  11. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  12. Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns

    Science.gov (United States)

    BastaniNejad, M.; Mohamed, Abdullah; Elmustafa, A. A.; Adderley, P.; Clark, J.; Covert, S.; Hansknecht, J.; Hernandez-Garcia, C.; Poelker, M.; Mammei, R.; hide

    2012-01-01

    The field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirror-like finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain, and two fine-grain) that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and field strength. In all cases, field emission from electrodes (stainless steel and/or niobium) could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a field strength of 18:7 MV/m.

  13. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage longwall cables. 75... MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high...

  14. Ultra-compact Marx-type high-voltage generator

    Science.gov (United States)

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  15. Digital measurement system for the LHC klystron high voltage modulator.

    CERN Document Server

    Mikkelsen, Anders

    Accelerating voltage in the Large Hadron Collider (LHC) is created by a means of 16 superconducting standing wave RF cavities, each fed by a 400MHz/300kW continuous wave klystron amplifier. Part of the upgrade program for the LHC long shutdown one is to replace the obsolete analogue current and voltage measurement circuitry located in the high voltage bunkers by a new, digital system, using ADCs and optical fibres. A digital measurement card is implemented and integrated into the current HV modulator oil tank (floating at -58kV) and interfaced to the existing digital VME boards collecting the data for several klystrons at the ground potential. Measured signals are stored for the logging, diagnostics and post-mortem analysis purposes.

  16. Self-biased circulators for high power applications

    Science.gov (United States)

    Sokolov, Alexander S.

    Self-biased circulators exploit the properties of high anisotropy magnetic field in hexagonal ferrites, thus allowing operation without biasing magnets and a significant size and weight reduction. Although first self-biased circulators were demonstrated more than 20 years ago, all the prototypes constructed so far are unsuitable for practical applications. An attempt to design a self-biased circulator from scratch was made. Novel exceptionally low dielectric loss and high heat conductivity ceramic materials were developed and innovative substrate synthesis techniques were employed. Low temperature cofiring of green body ferrite compacts and dielectric ceramic slurries were mastered, resulting in solid composite substrates. Original device design was developed. Key features (including wide coupling angles, wide microstriplines, thick substrate, and absence of impedance transformers) enable low insertion loss, broadband operation, high power handling, and compact size. Fabrication and testing of Ka band Y-junction self-biased circulator are reported herein. Furthermore, design approach and fabrication techniques developed here can be readily applied for the construction of X-band self-biased circulators, provided that suitable ferrite materials are available. Low temperature cofiring of ferrite and dielectric materials is especially beneficial for various RF and high-frequency applications. Multiple devices can be readily fabricated on a single wafer using conventional lithographic techniques, resulting in true microwave monolithic integrated circuit.

  17. [Fatal electric arc accidents due to high voltage].

    Science.gov (United States)

    Strauch, Hansjürg; Wirth, Ingo

    2004-01-01

    The frequency of electric arc accidents has been successfully reduced owing to preventive measures taken by the professional association. However, the risk of accidents has continued to exist in private setting. Three fatal electric arc accidents caused by high voltage are reported with reference to the autopsy findings.

  18. Optical Spectra of the High Voltage Erosive Water Discharge

    CERN Document Server

    Pirozerski, A L

    2008-01-01

    In the present paper kinetics of emission spectra of the high voltage erosive water discharge at near ultraviolet and visible spectral ranges has been investigated. Obtained results show a similarity of physical properties of this discharge (and of corresponding plasmoids) to that of some other types of erosional discharges which also result in the formation of dust-gas fireballs.

  19. Intense neutron source: high-voltage power supply specifications

    Energy Technology Data Exchange (ETDEWEB)

    Riedel, A.A.

    1980-08-01

    This report explains the need for and sets forth the electrical, mechanical and safety specifications for a high-voltage power supply to be used with the intense neutron source. It contains sufficient information for a supplier to bid on such a power supply.

  20. Measurements for validation of high voltage underground cable modelling

    DEFF Research Database (Denmark)

    Bak, Claus Leth; Gudmundsdottir, Unnur Stella; Wiechowski, Wojciech Tomasz

    2009-01-01

    This paper discusses studies concerning cable modelling for long high voltage AC cable lines. In investigating the possibilities of using long cables instead of overhead lines, the simulation results must be trustworthy. Therefore a model validation is of great importance. This paper describes...

  1. Space charge accumulation in polymeric high voltage DC cable systems

    NARCIS (Netherlands)

    Bodega, R.

    2006-01-01

    One of the intrinsic properties of the polymeric high voltage (HV) direct current (DC) cable insulation is the accumulation of electrostatic charges. Accumulated charges distort the initial Laplacian distribution of the electric field, leading to a local field enhancement that may cause insulation d

  2. 30 CFR 18.53 - High-voltage longwall mining systems.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwall mining systems. 18.53... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor-starter enclosure, with the exception of a controller on a high-voltage shearer, the disconnect...

  3. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices. High-voltage...

  4. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as...

  5. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage power centers and transformers... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination... record shall be kept in a book approved by the Secretary. High-Voltage Longwalls Source: 67 FR 11001,...

  6. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall...

  7. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  8. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  9. Monolithic blue LED series arrays for high-voltage AC operation

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping [Satellite Venture Business Laboratory, University of Tokushima, Tokushima 770-8506 (Japan); Sato, Hisao; Mizobuchi, Takashi; Morioka, Kenji; Kawano, Shunsuke; Muramoto, Yoshihiko; Sato, Daisuke; Sakai, Shiro [Nitride Semiconductor Co. Ltd., Naruto, Tokushima 771-0360 (Japan); Lee, Young-Bae; Ohno, Yasuo [Department of Electrical and Electronic Engineering, University of Tokushima, Tokushima 770-8506 (Japan)

    2002-12-16

    Design and fabrication of monolithic blue LED series arrays that can be operated under high ac voltage are described. Several LEDs, such as 3, 7, and 20, are connected in series and in parallel to meet ac operation. The chip size of a single device is 150 {mu}m x 120 {mu}m and the total size is 1.1 mm x 1 mm for a 40(20+20) LED array. Deep dry etching was performed as device isolation. Two-layer interconnection and air bridge are utilized to connect the devices in an array. The monolithic series array exhibit the expected operation function under dc and ac bias. The output power and forward voltage are almost proportional to LED numbers connected in series. On-wafer measurement shows that the output power is 40 mW for 40(20+20) LED array under ac 72 V. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  10. An atmospheric pressure plasma source driven by a train of monopolar high voltage pulses superimposed to a dc voltage

    OpenAIRE

    Stoican, O.S.

    2011-01-01

    Abstract An atmospheric pressure plasma source supplied by an electrical circuit consisting of two voltage sources in parallel connection is reported. One of them is a low-power self-oscillating flyback converter which produces negative voltage pulses with an amplitude of several kilovolts. The high voltage pulses are necessary to ignite an electrical discharge between the electrodes at atmospheric pressure. An additional dc source delivering several hundreds of volts at a few hund...

  11. Next generation KATRIN high precision voltage divider for voltages up to 65kV

    CERN Document Server

    Bauer, S; Hochschulz, F; Ortjohann, H -W; Rosendahl, S; Thümmler, T; Schmidt, M; Weinheimer, C

    2013-01-01

    The KATRIN (KArlsruhe TRItium Neutrino) experiment aims to determine the mass of the electron antineutrino with a sensitivity of 200meV by precisely measuring the electron spectrum of the tritium beta decay. This will be done by the use of a retarding spectrometer of the MAC-E-Filter type. To achieve the desired sensitivity the stability of the retarding potential of -18.6kV has to be monitored with a precision of 3ppm over at least two months. Since this is not feasible with commercial devices, two ppm-class high voltage dividers were developed, following the concept of the standard divider for DC voltages of up to 100kV of the Physikalisch-Technische Bundesanstalt (PTB). In order to reach such high accuracies different effects have to be considered. The two most important ones are the temperature dependence of resistance and leakage currents, caused by insulators or corona discharges. For the second divider improvements were made concerning the high-precision resistors and the thermal design of the divider....

  12. THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP)

    Institute of Scientific and Technical Information of China (English)

    M.S. Li; S.L. Zhu; Fuhui Wang; C. Sun; L.S. Wen

    2001-01-01

    Owing to the characteristics of arc ion plating(AIP) technique, the structure and com-position of TiAlN films can be tailored by controlling of various parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel for compressor blade of areo-engine under different d.c pulse bias voltage and ni-trogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressureon the deposition rate, droplet formation, microstruture and elemental component ofthe films were investigated.

  13. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  14. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  15. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3)...

  16. 30 CFR 77.704-2 - Repairs to energized high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized high-voltage lines. 77.704... UNDERGROUND COAL MINES Grounding § 77.704-2 Repairs to energized high-voltage lines. An energized high-voltage... repairs will be performed on power circuits with a phase-to-phase nominal voltage no greater than...

  17. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  18. TiN coated aluminum electrodes for DC high voltage electron guns

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A., E-mail: aelmusta@odu.edu [Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529 and The Applied Research Center, Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States); Taus, Rhys [Department of Physics, Loyola Marymount University, Los Angeles, California 90045 (United States); Forman, Eric; Poelker, Matthew [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-05-15

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  19. Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Hansen, Jørn Bindslev

    1999-01-01

    We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero...

  20. A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model

    Institute of Scientific and Technical Information of China (English)

    Li Qi; Zhu Jinluan; Wang Weidong; Yue Hongwei; Jin Liangnian

    2011-01-01

    A novel high-voltage device structure with a floating heavily doped N+ ring embedded in the substrate is reported,which is called FR LDMOS.When the N+ ring is introduced in the device substrate,the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N+ ring junction,and the vertical breakdown characteristic is improved significantly.Based on the Poisson equation of cylindrical coordinates,a breakdown voltage model is developed.The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.

  1. An ultra-low noise, high-voltage piezo driver

    CERN Document Server

    Pisenti, N C; Reschovsky, B J; Barker, D S; Campbell, G K

    2016-01-01

    We present an ultra-low noise, high-voltage driver suited for use with piezoelectric actuators and other low-current applications. The architecture uses a flyback switching regulator to generate up to 250V in our current design, with an output of 1 kV or more possible with small modifications. A high slew-rate op-amp suppresses the residual switching noise, yielding a total RMS noise of $\\approx 100\\mu$V (1 Hz--100 kHz). A low-voltage ($\\pm 10$V), high bandwidth signal can be summed with unity gain directly onto the output, making the driver well-suited for closed-loop feedback applications. Digital control enables both repeatable setpoints and sophisticated control logic, and the circuit consumes less than 150mA at $\\pm 15$V.

  2. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  3. High Output Voltage Based Multiphase Step-Up DC-DC Converter Topology with Voltage Doubler Rectifiers

    Directory of Open Access Journals (Sweden)

    Liao Xiaozhong

    2013-02-01

    Full Text Available High Output Voltage Based Multiphase Step-Up DC-DC Converter topology with voltage doubler rectifiers is presented in this paper. High output voltage is obtained due to the series combination of voltage doubler rectifiers on the secondary side of high frequency transformers. This topology is useful in the application where the output voltage is greater than the input. The two loop control strategy has been developed in order to analyze the stable and effective working of the converter topology. Therefore the working mode analysis of the converter topology has been described in detail. The multiphase step-up DC-DC converter topology is first simulated on MATLAB and then a prototype has been designed in order to verify the simulation and experimental results. Finally the simulation and experimental results are found to be satisfactory.

  4. [Design of a high-voltage insulation testing system of X-ray high frequency generators].

    Science.gov (United States)

    Huang, Yong; Mo, Guo-Ming; Wang, Yan; Wang, Hong-Zhi; Yu, Jie-Ying; Dai, Shu-Guang

    2007-09-01

    In this paper, we analyze the transformer of X-ray high-voltage high-frequency generators and, have designed and implemented a high-voltage insulation testing system for its oil tank using full-bridge series resonant soft switching PFM DC-DC converter.

  5. A High-Voltage-Tolerant and Precise Charge-Balanced Neuro-Stimulator in Low Voltage CMOS Process.

    Science.gov (United States)

    Luo, Zhicong; Ker, Ming-Dou

    2016-12-01

    This paper presents a 4 × VDD neuro-stimulator in a 0.18- μm 1.8 V/3.3 V CMOS process. The self-adaption bias technique and stacked MOS configuration are used to prevent transistors from the electrical overstress and gate-oxide reliability issue. A high-voltage-tolerant level shifter with power-on protection is used to drive the neuro-stimulator The reliability measurement of up to 100 million periodic cycles with 3000- μA biphasic stimulations in 12-V power supply has verified that the proposed neuro-stimulator is robust. Precise charge balance is achieved by using a novel current memory cell with the dual calibration loops and leakage current compensation. The charge mismatch is down to 0.25% over all the stimulus current ranges (200-300 μA) The residual average dc current is less than 6.6 nA after shorting operation.

  6. Bottlenecks reduction using superconductors in high voltage transmission lines

    Directory of Open Access Journals (Sweden)

    Daloub Labib

    2016-01-01

    Full Text Available Energy flow bottlenecks in high voltage transmission lines known as congestions are one of the challenges facing power utilities in fast developing countries. Bottlenecks occur in selected power lines when transmission systems are operated at or beyond their transfer limits. In these cases, congestions result in preventing new power supply contracts, infeasibility in existing contracts, price spike and market power abuse. The “Superconductor Technology” in electric power transmission cables has been used as a solution to solve the problem of bottlenecks in energy transmission at high voltage underground cables and overhead lines. The increase in demand on power generation and transmission happening due to fast development and linked to the intensive usage of transmission network in certain points, which in turn, lead to often frequent congestion in getting the required power across to where it is needed. In this paper, a bottleneck in high voltage double overhead transmission line with Aluminum Conductor Steel Reinforced was modeled using conductor parameters and replaced by Gap-Type Superconductor to assess the benefit of upgrading to higher temperature superconductor and obtain higher current carrying capacity. This proved to reduce the high loading of traditional aluminum conductors and allow more power transfer over the line using superconductor within the same existing right-of-way, steel towers, insulators and fittings, thus reducing the upgrade cost of building new lines.

  7. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail, ......, including linear as well as switched mode amplifiers. In the past much attention has been paid on the driver for piezoelectric actuator. As DEAP is a type of new material, there is not much literature reference for it.......This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  8. Stability of fluxon motion in long Josephson junctions at high bias

    DEFF Research Database (Denmark)

    Pagano, S.; Sørensen, Mads Peter; Christiansen, Peter Leth

    1988-01-01

    In long Josephson junctions the motion of fluxons is revealed by the existence of current steps, zero-field steps, in the current-voltage characteristics. In this paper we investigate the stability of the fluxon motion when high values of the current bias are involved. The investigation is carried...... dissipations and of the junction length on the switching-current value is investigated. A simple boundary model is able to describe, for junctions of overlap geometry, the qualitative dependence of the switching current on the system parameters....

  9. THE EFFECT OF LIGHTNING ON HIGH VOLTAGE ELECTRICAL SUBSTATIONS’ LOW VOLTAGE SYSTEMS

    Directory of Open Access Journals (Sweden)

    M. I. Fursanov

    2016-01-01

    Full Text Available The article presents the results of studies of the effects of lightning on low voltage systems of high voltage electrical substations with outdoor switchgears of 110 kV. The topicality of research is associated with a wide spreading of such substations as well as with a high reliability requirements of their work and, also, with their widespread distribution and high probability of lightning strikes to the substation or around it. The highest probable and the most dangerous effects of lightning on low voltage systems of a substation are determined on the basis of critical review and special literature analysis and, also, of systematization of practical information that had been collected during the survey of operating substations. Adequate physical models were developed for the list of hazardous effects based on physical processes of lightning. A model of each effect was studied on the basis of the sensitivity theory. The accuracy and adequacy of the models were verified by means of comparison of calculation results for the models under investigation with the results of calculations fulfilled in accordance with specialized programs, as well as from practical or theoretical data obtained by other authors. The factors that had been included in the models were studied and were defined in accordance with their nature (natural or artificial, the range of possible values in a substation was determined; the coefficients of elasticity were calculated. The obtained results enable to ascertain the contribution of the factor in the effect of lightning and the ability to control the factor. The relationship between the factors and the effects of lightning are shown as graphs. For practical application the information, obtained as the result of the research, was organized in the form of checklists that can be applied when collecting baseline information to develop the lightning protection of the substation, to examine the existing lightning protection, to

  10. High voltage generator circuit with low power and high efficiency applied in EEPROM

    Institute of Scientific and Technical Information of China (English)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage (Vth) MOSFET and the charge transfer switch (CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

  11. Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

    Science.gov (United States)

    Stevons, C. E.; Jenke, P.; Briggs, M. S.

    2016-12-01

    Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

  12. High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

    Science.gov (United States)

    Nussberger, A. A.; Woodcock, G. R.

    1980-01-01

    SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

  13. Health problems from radiation of high-voltage facilities

    Directory of Open Access Journals (Sweden)

    Hossein Ali Yousefi Rizi

    2013-01-01

    Full Text Available Aims: The aim of this study was to survey the health problems caused by exposure to high-voltage facility radiation. Materials and Methods: Sampling included workers exposed to electromagnetic fields at high-voltage facilities. The strength of the electric and magnetic fields was determined by a field meter. A questionnaire was used to evaluate the prevalence of subjective and psychological symptoms. Statistical descriptive used and data analyzed by a Student′s t-tests. Results: This study indicates that increased symptoms among the exposed workers including depression, anxiety, hostility, paranoia, inter-sensitivity, and obsession-compulsion. Some of the self-reported symptoms were, headache (53.5%, fatigue (35.6%, difficulties in concentration (32.5%, vertigo/dizziness (30.4%, attention disorders (28.8%, nervousness (28.1%, and palpitations (14.7%. A significant relationship was observed between the exposure to the electromagnetic field and psychological symptoms (P < 0.05. Conclusion: Radiation of high-voltage facilities probably increased the risk of mental disorders and intensified them in susceptible workers, especially depression. This finding confirmed the results obtained in provocative studies that indicated an increase in the risk of psychological symptoms, which was put forth by several investigators Observation of occupational health and other control measures play an important role in decreasing the symptoms.

  14. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2013-01-01

    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  15. High Voltage Tests in the LUX-ZEPLIN System Test

    Science.gov (United States)

    Whitis, Thomas; Lux-Zeplin Collaboration

    2016-03-01

    The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

  16. High voltage magnetic pulse generation using capacitor discharge technique

    Directory of Open Access Journals (Sweden)

    M. Rezal

    2014-12-01

    Full Text Available A high voltage magnetic pulse is designed by applying an electrical pulse to the coil. Capacitor banks are developed to generate the pulse current. Switching circuit consisting of Double Pole Double Throw (DPDT switches, thyristor, and triggering circuit is developed and tested. The coil current is measured using a Hall-effect current sensor. The magnetic pulse generated is measured and tabulated in a graph. Simulation using Finite Element Method Magnetics (FEMM is done to compare the results obtained between experiment and simulation. Results show that increasing the capacitance of the capacitor bank will increase the output voltage. This technology can be applied to areas such as medical equipment, measurement instrument, and military equipment.

  17. High Voltage Coaxial Vacuum Gap Breakdown for Pulsed Power Liners

    Science.gov (United States)

    Cordaro, Samuel; Bott-Suzuki, Simon; Caballero Bendixsen, Luis Sebastian

    2015-11-01

    The dynamics of Magnetized Liner Inertial Fusion (MagLIF)1, are presently under detailed study at Sandia National Laboratories. Alongside this, a comprehensive analysis of the influence of the specific liner design geometry in the MagLIF system on liner initiation is underway in the academic community. Recent work at UC San Diego utilizes a high voltage pulsed system (25kV, 150ns) to analyze the vacuum breakdown stage of liner implosion. Such experimental analyses are geared towards determining how the azimuthal symmetry of coaxial gap breakdown affect plasma initiation within the liner. The final aim of the experimental analysis is to assess to what scale symmetry remains important at high (MV) voltages. An analysis of the above will utilize plasma self-emission via optical MCP, current measurements, voltage measurements near the gap, exact location of breakdown via 2D b-dot probe triangulation, as well as measuring the evolution of the B-field along the length of the liner via b-dot array. Results will be discussed along with analytical calculations of breakdown mechanisms

  18. Modeling of High-voltage Breakdown in Helium

    Science.gov (United States)

    Xu, Liang; Khrabrov, Alexander; Kaganovich, Igor; Sommerer, Timothy

    2016-09-01

    We investigate the breakdown in extremely high reduced electric fields (E/N) between parallel-plate electrodes in helium. The left branch of the Paschen curve in the voltage range of 20-350kV and inter-electrode gap range of 0.5-3.5cm is studied analytically and with Monte-Carlo/PIC simulations. The model incorporates electron, ion, and fast neutral species whose energy-dependent anisotropic scattering, as well as backscattering at the electrodes, is carefully taken into account. Our model demonstrates that (1) anisotropic scattering is indispensable for producing reliable results at such high voltage and (2) due to the heavy species backscattered at cathode, breakdown can occur even without electron- and ion-induced ionization of the background gas. Fast atoms dominate in the breakdown process more and more as the applied voltage is increased, due to their increasing ionization cross-section and to the copious flux of energetic fast atoms generated in charge-exchange collisions.

  19. Experimental validation of a high voltage pulse measurement method.

    Energy Technology Data Exchange (ETDEWEB)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  20. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  1. Electronically Tunable High Input Impedance Voltage-Mode Multifunction Filter

    Science.gov (United States)

    Chen, Hua-Pin; Yang, Wan-Shing

    A novel electronically tunable high input impedance voltage-mode multifunction filter with single inputs and three outputs employing two single-output-operational transconductance amplifiers, one differential difference current conveyor and two capacitors is proposed. The presented filter can be realized the highpass, bandpass and lowpass functions, simultaneously. The input of the filter exhibits high input impedance so that the synthesized filter can be cascaded without additional buffers. The circuit needs no any external resistors and employs two grounded capacitors, which is suitable for integrated circuit implementation.

  2. A magnesium–sodium hybrid battery with high operating voltage

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng-Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-06-10

    We report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mAh g-1. We also demonstrate the cell with an energy density of 135 Wh kg-1 and a high power density of up to 1.67 kW kg-1.

  3. Impact of Solar Array Designs on High Voltage Operations

    Science.gov (United States)

    Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

    2006-01-01

    As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone

  4. New perspectives in vacuum high voltage insulation. II. Gas desorption

    CERN Document Server

    Diamond, W T

    1998-01-01

    An examination has been made of gas desorption from unbaked electrodes of copper, niobium, aluminum, and titanium subjected to high voltage in vacuum. It has been shown that the gas is composed of water vapor, carbon monoxide, and carbon dioxide, the usual components of vacuum outgassing, plus an increased yield of hydrogen and light hydrocarbons. The gas desorption was driven by anode conditioning as the voltage was increased between the electrodes. The gas is often desorbed as microdischarges-pulses of a few to hundreds of microseconds-and less frequently in a more continuous manner without the obvious pulsed structure characteristic of microdischarge activity. The quantity of gas released was equivalent to many monolayers and consisted mostly of neutral molecules with an ionic component of a few percent. A very significant observation was that the gas desorption was more dependent on the total voltage between the electrodes than on the electric field. It was not triggered by field-emitted electrons but oft...

  5. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage

    Science.gov (United States)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage.

  6. Dynamic SVL and body bias for low leakage power and high performance in CMOS digital circuits

    Science.gov (United States)

    Deshmukh, Jyoti; Khare, Kavita

    2012-12-01

    In this article, a new complementary metal oxide semiconductor design scheme called dynamic self-controllable voltage level (DSVL) is proposed. In the proposed scheme, leakage power is controlled by dynamically disconnecting supply to inactive blocks and adjusting body bias to further limit leakage and to maintain performance. Leakage power measurements at 1.8 V, 75°C demonstrate power reduction by 59.4% in case of 1 bit full adder and by 43.0% in case of a chain of four inverters using SVL circuit as a power switch. Furthermore, we achieve leakage power reduction by 94.7% in case of 1 bit full adder and by 91.8% in case of a chain of four inverters using dynamic body bias. The forward body bias of 0.45 V applied in active mode improves the maximum operating frequency by 16% in case of 1 bit full adder and 5.55% in case of a chain of inverters. Analysis shows that additional benefits of using the DSVL and body bias include high performance, low leakage power consumption in sleep mode, single threshold implementation and state retention even in standby mode.

  7. Design of Plasma Generator Driven by High-frequency High-voltage Power Supply

    Directory of Open Access Journals (Sweden)

    C. Yong-Nong

    2013-03-01

    Full Text Available In this research, a high-frequency high-voltage power supply designed for plasma generator is presented. The powersupply mainly consists of a series resonant converter with a high-frequency high-voltage boost transformer. Due to theindispensable high-voltage inheritance in the operation of plasma generator, the analysis of transformer needconsidering not only winding resistance, leakage inductance, magnetizing inductance, and core-loss resistance, butalso parasitic capacitance resulted from the insulation wrappings on the high-voltage side. This research exhibits asimple approach to measuring equivalent circuit parameters of the high-frequency, high-voltage transformer with straycapacitance being introduced into the conventional modeling. The proposed modeling scheme provides not only aprecise measurement procedure but also effective design information for series-load resonant converter. The plasmadischarging plate is designed as part of the electric circuit in the series load-resonant converter and the circuit modelof the plasma discharging plate is also conducted as well. Thus, the overall model of the high-voltage plasmagenerator is built and the designing procedures for appropriate selections of the corresponding resonant-circuitparameters can be established. Finally, a high-voltage plasma generator with 220V, 60Hz, and 1kW input, along witha 22 kHz and over 8kV output, is realized and implemented.

  8. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  9. Pickup impact on high-voltage multifinger LDMOS-SCR with low trigger voltage and high failure current

    Science.gov (United States)

    Yang, Liu; Jin, Xiangliang; Wang, Yang; Zhou, Acheng

    2015-12-01

    The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal-oxide-semiconductor-silicon-controlled rectifier (LDMOS-SCR) has been studied in this article. Four-finger LDMOS-SCR structures with finger length of 50 μm using 0.5 μm 18 V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and tested. Theoretical analysis is carried out to make detailed comparisons between LDMOS-SCR with and without P+ pickup. It verifies that the multi-finger LDMOS-SCR with P+ pickup has greater electrostatic discharge (ESD) robustness and effectiveness. Furthermore, transmission line pulse (TLP) test has been done and the results show that the trigger voltage (Vt1) of the LDMOS-SCR with P+ pickup remarkably decreases from 46.19 to 35.39 V and the second breakdown current (It2) effectively increases from 8.13 to 10.08 A.

  10. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    Energy Technology Data Exchange (ETDEWEB)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  11. Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study

    DEFF Research Database (Denmark)

    Saha, Kamal K.; Blom, Anders; Thygesen, Kristian S.

    2012-01-01

    Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Grn/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted...... differential resistance as the bias voltage is increased from Vb=0 V to Vb≃0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers....

  12. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  13. High-forward-bias transport mechanism in a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, T.F.; Korte, L.; Conrad, E.; Schmidt, M.; Rech, B. [Department of Silicon Photovoltaics, Helmholtz-Zentrum Berlin fuer Materialien und Energie, Kekulestrasse 5, 12489 Berlin (Germany)

    2010-03-15

    In order to elucidate the transport mechanism in a-Si:H/c-Si heterojunction solar cells under high forward bias (U > 0.5 V), we conducted temperature-dependent measurements of current-voltage (I-V) curves in the dark and under illumination. ZnO:Al/(p)a-Si:H/(n)c-Si/(n{sup +})a-Si:H cells are compared with inversely doped structures and the impact of thin undoped a-Si:H buffer layers on charge carrier transport is explored. The solar cell I-V curves are analyzed employing a generalized two-diode model which allows fitting I-V data for a broad range of samples. The fitting results are complemented with numerical simulations using AFORS-HET under consideration of microscopic a-Si:H parameters as determined by constant-final-state-yield photoelectron spectroscopy (CFSYS) to identify possible origins for a systematic increase of the high-forward-bias ideality factor along with the open-circuit voltage (V{sub oc}). It is further shown that also for a-Si:H/c-Si heterojunctions, dark I-V curve fit parameters can unequivocally be linked to V{sub oc} under illumination, which may prove helpful for device assessment. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. High voltage, low inductance hydrogen thyratron study program

    Science.gov (United States)

    Caristi, R. F.; Turnquist, D.

    1981-01-01

    The second phase of a multi-phase program of research and development to gain the information necessary to fabricate a high voltage, low inductance hydrogen thyratron switch has now been completed. The thyratron is to be capable of switching tens of kiloamperes within tens of nanoseconds at voltage levels as high as 250 kV. To achieve low inductance, the thyratron is operated within a close-fitting coaxial current return. Both the tube and the return are made physically short, and the tube is designed such that the discharge is constrained to flow principally at the outer reaches of the device. A technique has been developed for modelling various types of box grids and then using computer-generated field plots to aid in the specifics of grid design. This model has been used to generate a comprehensive set of theoretical relations that are useful to determine the anode dissipation to be expected. Experimental results are described and discussed. Included are the ceramic test results, holdoff vs. time on charge and gas pressure, stage voltage addition, operation at high pulse repetition rates, current rise time as a function of gas pressure, and the triggering characteristics of multi-stage, box-grid tubes. Finally, the design of an intermediate experimental tube is discussed at length. This tube is expected to have an inductance less than 50 nH and to operate at 150 kV. Its design is based on both the theoretical and experimental results obtained during this phase of the research program. The overall conclusion is that a hydrogen thyratron capable of achieving the program's objectives is a feasible proposition.

  15. Properties of Polymer Composites Used in High-Voltage Applications

    Directory of Open Access Journals (Sweden)

    Ilona Pleşa

    2016-04-01

    Full Text Available The present review article represents a comprehensive study on polymer micro/nanocomposites that are used in high-voltage applications. Particular focus is on the structure-property relationship of composite materials used in power engineering, by exploiting fundamental theory as well as numerical/analytical models and the influence of material design on electrical, mechanical and thermal properties. In addition to describing the scientific development of micro/nanocomposites electrical features desired in power engineering, the study is mainly focused on the electrical properties of insulating materials, particularly cross-linked polyethylene (XLPE and epoxy resins, unfilled and filled with different types of filler. Polymer micro/nanocomposites based on XLPE and epoxy resins are usually used as insulating systems for high-voltage applications, such as: cables, generators, motors, cast resin dry-type transformers, etc. Furthermore, this paper includes ample discussions regarding the advantages and disadvantages resulting in the electrical, mechanical and thermal properties by the addition of micro- and nanofillers into the base polymer. The study goals are to determine the impact of filler size, type and distribution of the particles into the polymer matrix on the electrical, mechanical and thermal properties of the polymer micro/nanocomposites compared to the neat polymer and traditionally materials used as insulation systems in high-voltage engineering. Properties such as electrical conductivity, relative permittivity, dielectric losses, partial discharges, erosion resistance, space charge behavior, electric breakdown, tracking and electrical tree resistance, thermal conductivity, tensile strength and modulus, elongation at break of micro- and nanocomposites based on epoxy resin and XLPE are analyzed. Finally, it was concluded that the use of polymer micro/nanocomposites in electrical engineering is very promising and further research work

  16. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    Science.gov (United States)

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  17. Hazard classification assessment for the High Voltage Initiator

    Energy Technology Data Exchange (ETDEWEB)

    Cogan, J.D.

    1994-04-19

    An investigation was conducted to determine whether the High Voltage Initiator (Sandia p number 395710; Navy NAVSEA No. 6237177) could be assigned a Department of Transportation (DOT) hazard classification of ``IGNITERS, 1.4G, UN0325`` under Code of Federal Regulations, 49 CFR 173.101, when packaged per Mound drawing NXB911442. A hazard classification test was performed, and the test data led to a recommended hazard classification of ``IGNITERS, 1.4G, UN0325,`` based on guidance outlined in DOE Order 1540.2 and 49 CFR 173.56.

  18. A High-Voltage Bipolar Transconductance Amplifier for Electrotactile Stimulation

    Science.gov (United States)

    Schaning, Matthew A.; Kaczmarek, Kurt A.

    2008-01-01

    This article describes a high-performance transconductance amplifier specifically designed for electrotactile (electrocutaneous) stimulation. It enables voltages up to ±600 V to be produced at the output which will allow the psychophysiological performance associated with stimulation of the fingertip using various stimulation waveforms to be studied more thoroughly. The design has a transconductance of up to 20 mA/V, an 8.8-MΩ output resistance, and can provide output currents up to ±20 mA. A complete schematic diagram is presented along with a discussion of theory of operation and safety issues as well as performance and derating plots from the implemented design. PMID:18838369

  19. High Luminosity LHC matching section layout vs crab cavity voltage

    CERN Document Server

    Dalena, B; Chance, A; De Maria, R; Fartoukh, S

    2013-01-01

    In the framework of the HiLumi-LHC project we present a new possible variant for the layout of the LHC matching section located in the high luminosity insertions. This layout is optimized to reduce the demand on the voltage of the crab cavities, while substantially improving the optics squeeze-ability, both in ATS [1] and non-ATS mode. This new layout will be described in details together with its performance figures in terms of mechanical acceptance, chromatic properties and optics flexibility.

  20. Simulation Research of Transient Over-voltage on High-voltage Shunt Capacitor Banks

    Institute of Scientific and Technical Information of China (English)

    HU Quan-wei; ZHOU Xing-xing; SI Wen-rong; ZHANG Yang; LI Jur-hao; LI Yan-ming

    2011-01-01

    With the development of power systems,a large number of shunt capacitors are used to improve power quality in the distribution network.The shunt capacitor banks are operated much frequently,as a result,the capacitor banks will bear large numbers of over-voltage inevitably.If the over-voltage exceeds certain amplitude,the capacitor will be damaged.This paper aims at the capacitor banks in the 35 kV side of Shanghai Xu-xing 500 kV substation,and applies ATP-EMTP to simulate the over-voltages generated by operating the switches under different angles of the source.Finally,according to the results of simulation and theoretical analysis,a best choice (i.e.angles of the source) to switch on capacitor banks is proposed.In this case the over-voltage on the capacitor will be limited to lowest.

  1. EEG biofeedback improves attentional bias in high trait anxiety individuals.

    Science.gov (United States)

    Wang, Sheng; Zhao, Yan; Chen, Sijuan; Lin, Guiping; Sun, Peng; Wang, Tinghuai

    2013-10-07

    Emotion-related attentional bias is implicated in the aetiology and maintenance of anxiety disorders. Electroencephalogram (EEG) biofeedback can obviously improve the anxiety disorders and reduce stress level, and can also enhance attention performance in healthy subjects. The present study examined the effects and mechanisms of EEG biofeedback training on the attentional bias of high trait anxiety (HTA) individuals toward negative stimuli. Event-related potentials were recorded while HTA (n=24) and nonanxious (n=21) individuals performed the color-word emotional Stroop task. During the emotional Stroop task, HTA participants showed longer reaction times and P300 latencies induced by negative words, compared to nonanxious participants.The EEG biofeedback significantly decreased the trait anxiety inventory score and reaction time in naming the color of negative words in the HTA group. P300 latencies evoked by negative stimuli in the EEG biofeedback group were significantly reduced after the alpha training, while no significant changes were observed in the sham biofeedback group after the intervention. The prolonged P300 latency is associated with attentional bias to negative stimuli in the HTA group. EEG biofeedback training demonstrated a significant improvement of negative emotional attentional bias in HTA individuals, which may be due to the normalization of P300 latency.

  2. High Voltage Breakdown Levels in Various EPC Potting Materials

    Science.gov (United States)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  3. Survey of high voltage electron microscopy worldwide in 1998.

    Energy Technology Data Exchange (ETDEWEB)

    Allen, C. W.

    1998-03-05

    High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hitachi instruments at the Universities of Nagoya and Tokyo. Since that time 53 commercial instruments, having maximum accelerating potentials of 0.5-3.5 MV, will have been delivered by the end of 1998. Table 1 summarizes the sites and some information regarding those HVEMS which are available in 1998. This corrects, updates and expands an earlier report of this sort [2]. There have been three commercial HVEM manufacturers: AEI (UK), Hitachi and JEOL (Japan). The proportion of the total number of HVEMS produced by each manufacturer is similar to that reflected in Table 1: AEI and Kratos/AEI (12), Hitachi (20) and JEOL (21). The term Kratos/AEI refers to instruments delivered after the takeover of AEI by Grates in the late 1970's. In Table 1 only maximum accelerating potentials are listed, which is generally also the design value for which the resolution for imaging was optimized. It is important to realize that in many applications, especially those studying irradiation effects, much lower voltages may be employed somewhat routinely to minimize atom displacements by the incident electron beam during analysis. These minimum values range from 100 kV for the AEI and Kratos/AEI instruments to typically 400 kV for the current generation of atomic resolution instruments, the latter being well above the thresholds for displacement in light elements such as Al and Si and for displacement of anions in many ceramic materials such as the high Tc superconductors, for example. An additional potential problem is electron-induced sputtering and differential sputtering (unequal sputtering rates in multicomponent materials), especially when accurate elemental microanalysis is being attempted. These same issues may arise for intermediate voltage TEMs as well, of course.

  4. 30 CFR 77.704-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 77.704-1 Section 77... MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as... provided in § 77.103) that such high-voltage line has been deenergized and grounded. Such qualified...

  5. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2016-10-01

    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  6. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  7. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  8. 30 CFR 75.705-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground;...

  9. 30 CFR 77.807-3 - Movement of equipment; minimum distance from high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... high-voltage lines. 77.807-3 Section 77.807-3 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-3 Movement of equipment; minimum distance from high-voltage lines. When any part of any equipment operated on the surface of...

  10. 30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any...

  11. 21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended...

  12. 30 CFR 75.811 - High-voltage underground equipment; grounding.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage underground equipment; grounding... COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.811 High-voltage underground equipment; grounding. Frames, supporting structures...

  13. 30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface... AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line...

  14. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting...

  15. Pollution Maintenance Techniques in Coastal High Voltage Installations

    Directory of Open Access Journals (Sweden)

    E. Pyrgioti

    2011-02-01

    Full Text Available Pollution of outdoor high voltage insulators is a common problem for utilities, with a considerable impact to power system reliability. In an effort to prevent possible flashovers due to pollution, many methods have been applied, aiming to improve the insulation performance, either by suppressing the formation of surface conductivity or by increasing the possible insulation level. In the case of substations, the selection of the appropriate technique is complex due to certain issues correlated to the nature of the installation. In this paper, several techniques usually implemented by utilities, are investigated based on the experienced gained in the case of Crete, a Greek island in southern Europe, where due to the coastal development of the power system, the majority of high voltage installations are exposed to intense marine pollution. The technique of coating insulators with Room Temperature Vulcanized Silicone Rubber (RTV SIR has proved rather efficient and therefore is presented extendedly. Correlation of the material behaviour with environmental conditions is discussed and results from long term monitoring, including environmental parameters and leakage current measurements, in a 150 kV Substation are presented. It is shown that RTV SIR coatings have remarkably suppressed surface activity and that porcelain insulators exhibit different activity period when coated.

  16. A high-voltage rechargeable magnesium-sodium hybrid battery

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yifei; An, Qinyou; Cheng, Yingwen; Liang, Yanliang; Ren, Yang; Sun, Cheng-Jun; Dong, Hui; Tang, Zhongjia; Li, Guosheng; Yao, Yan

    2017-04-01

    Growing global demand of safe and low-cost energy storage technology triggers strong interests in novel battery concepts beyond state-of-art Li-ion batteries. Here we report a high-voltage rechargeable Mg–Na hybrid battery featuring dendrite-free deposition of Mg anode and Na-intercalation cathode as a low-cost and safe alternative to Li-ion batteries for large-scale energy storage. A prototype device using a Na3V2(PO4)3 cathode, a Mg anode, and a Mg–Na dual salt electrolyte exhibits the highest voltage (2.60 V vs. Mg) and best rate performance (86% capacity retention at 10C rate) among reported hybrid batteries. Synchrotron radiation-based X-ray absorption near edge structure (XANES), atomic-pair distribution function (PDF), and high-resolution X-ray diffraction (HRXRD) studies reveal the chemical environment and structural change of Na3V2(PO4)3 cathode during the Na ion insertion/deinsertion process. XANES study shows a clear reversible shift of vanadium K-edge and HRXRD and PDF studies reveal a reversible two-phase transformation and V–O bond length change during cycling. The energy density of the hybrid cell could be further improved by developing electrolytes with a higher salt concentration and wider electrochemical window. This work represents a significant step forward for practical safe and low-cost hybrid batteries.

  17. Evolution of recrystallization textures in high voltage aluminum capacitor foils

    Institute of Scientific and Technical Information of China (English)

    刘楚明; 张新明; 周鸿章; 陈志永; 邓运来; 周卓平

    2001-01-01

    The evolution of recrystallization textures in high voltage aluminum capacitor foils which are produced with a high level of cold reduction was tracked by analysis of microstructure and crystallographic texture. The results show that the deformation textures are mainly composed of S-orientation, Cu-orientation and a little Bs-orientation. During the low temperature stages of final annealing, the iron precipitates first along the sub-grain boundaries, and the Fe concentration in the matrix becomes low. Then, the cube grains nucleate preferably into the sub-grains. At high temperature stages, the cube nuclei can grow preferably because of their 40°〈111〉 orientation relationship to the S orientation, the main component of the rolling texture. Finally, the cube texture is sharply strong and the R orientation is very weak in the foils.

  18. Class D audio amplifiers for high voltage capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis

    voltage capacitive transducers can be constructed with THD+N below 0.1 % and peak efficiency above 80 %. However the complexity of the amplifier combined with the current high cost of components, makes the technology of DEAP based loudspeaker unfeasible. Suggestions to future work in the pursuit...... of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice....... Due to the similarities between the electrostatic loudspeaker and the DEAP transducer, the state-of-the-art has a special focus on amplifiers for electrostatic loudspeakers. Amplifiers for other type of capacitive transducers like piezoelectric ones are also considered. Finally the current state...

  19. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

    Science.gov (United States)

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  20. Methodology for 1/f noise parameter extraction for high-voltage MOSFETs

    Science.gov (United States)

    Mavredakis, Nikolaos; Pflanzl, Walter; Seebacher, Ehrenfried; Bucher, Matthias

    2015-01-01

    This paper proposes a detailed low frequency noise (LFN) parameter extraction method for high-voltage (HV) MOSFETs at low (50 mV) and medium (3 V) drain biases. In Vd = 3 V region, noise coming from the channel is dominant while in linear region there is an extra contribution of noise from the drift region part especially for long-channel devices in strong inversion region. Flicker noise of 50 V and 20 V N- and P-channel HV-MOSFETs was measured over a large current range from weak to strong inversion, making possible the extraction of the noise parameters related to the different noise contributions, such as mobility fluctuations in low current regime, carrier number fluctuations and Coulomb scattering in medium and high current regime. In some cases, series resistance noise contribution especially at high current is apparent as well. The parameter extraction procedure is devised for a recently established charge-based flicker noise model for HV-MOSFETs. Noise parameters related to the carrier number fluctuation effect in the gate oxide extension in drift region are also extracted in high current regime of long-channel devices under low drain bias condition. The frequency exponent AF related to the slope of the measured noise spectra is also extracted. Measurements and analysis include both long as well as short N- and P-channel HV-MOSFETs.

  1. High Efficiency Interleaved Active Clamped Dc-Dc Converter with Fuel Cell for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Sona P

    2014-02-01

    Full Text Available A high efficiency interleaved ZVS active clamped current fed dc-dc converter is proposed in this paper specially used for fuel cell applications. As the fuel cell output is very low we are in need of a step up dc-dc converter. Here a current fed dc-dc converter is used. Two current fed dc-dc converters are interleaved by connecting their inputs in parallel and outputs in series. With this proposed methodology input current ripples in the fuel cell stacks can be reduced and a regulated output voltage ripples can be obtained. The active clamping circuit used in this model absorbs the turn off voltage spikes hence low voltage devices with low on state resistance can be used.Voltage doubler circuits will give double the output voltage than normal with smaller transformer turns ratio and flexibility. The proposed method is simulated in MATLAB for verifying the accuracy of the proposed design.

  2. Propylene based systems for high voltage cable insulation applications

    Energy Technology Data Exchange (ETDEWEB)

    Hosier, I L; Vaughan, A S; Swingler, S G [ECS, University of Southampton, Highfield, Southampton, SO17 1BJ (United Kingdom); Cozzarini, L, E-mail: ILH@ecs.soton.ac.u [DMRN, University of Trieste, Via Valerio 6A, 34127 Trieste (Italy)

    2009-08-01

    Crosslinked polyethylene (XLPE) remains the material of choice for extruded high voltage cables, possessing excellent thermo-mechanical and electrical properties. However, it is not easily recyclable posing questions as to its long term sustainability. Whilst both polyethylene and polypropylene are widely recycled and provide excellent dielectric properties, polypropylene has significantly better mechanical integrity at high temperatures than polyethylene. However, while isotactic polypropylene is too stiff at room temperature for incorporation into a cable system, previous studies by the authors have indicated that this limitation can be overcome by using a propylene-ethylene copolymer. Whilst these previous studies considered unrelated systems, the current study aims to quantify the usefulness of a series of related random propylene-ethylene co-polymers and assesses their potential for replacing XLPE.

  3. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  4. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  5. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  6. Automatic Functional Step-up System in High-Voltage Installation

    Institute of Scientific and Technical Information of China (English)

    陈方泉; 严一白; 宋进; 林财兴

    2004-01-01

    This article describes automatic functional step-up systems in high-voltage installation, with emphases on functional process of step-up and step-down, two-circuit control and elimination of tip burr voltage.

  7. Unique Power Dense, Configurable, Robust, High-Voltage Power Supplies Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Princeton Power will develop and deliver three small, lightweight 50 W high-voltage power supplies that have a configurable output voltage range from 500 to 50 kVDC....

  8. Battery powered high output voltage bidirectional flyback converter for cylindrical DEAP actuator

    DEFF Research Database (Denmark)

    Huang, Lina; Thummala, Prasanth; Zhang, Zhe;

    2012-01-01

    DEAP (Dielectric Electro Active Polymer) actuator is essentially a capacitive load and can be applied in various actuation occasions. However, high voltage is needed to actuate it. In this paper, a high voltage bidirectional flyback converter with low input voltage is presented. The fundamental....... The design parameters for flyback transformer and snubber circuits are illustrated. Moreover, the experimental waveforms are provided....

  9. 30 CFR 57.12071 - Movement or operation of equipment near high-voltage powerlines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Movement or operation of equipment near high-voltage powerlines. 57.12071 Section 57.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...-voltage powerlines. When equipment must be moved or operated near energized high-voltage powerlines...

  10. 30 CFR 56.12071 - Movement or operation of equipment near high-voltage power lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage power lines. 56.12071 Section 56.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... NONMETAL MINES Electricity § 56.12071 Movement or operation of equipment near high-voltage power lines. When equipment must be moved or operated near energized high-voltage powerlines (other than...

  11. 30 CFR 77.807-2 - Booms and masts; minimum distance from high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage lines. 77.807-2 Section 77.807-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-2 Booms and masts; minimum distance from high-voltage lines. The booms and masts of equipment operated on the surface of...

  12. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    Energy Technology Data Exchange (ETDEWEB)

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions

  13. Simulation Model solves exact the Enigma named Generating high Voltages and high Frequencies by Tesla Coil

    Directory of Open Access Journals (Sweden)

    Simo Janjanin

    2016-11-01

    Full Text Available Simulation model of Tesla coil has been successfully completed, and has been verified the procedure and functioning. The literature and documentation for the model were taken from the rich sources, especially the copies of Tesla patents. The oscillating system‟s electrical scheme consists of the voltage supply 220/50 Hz, Fe transformer, capacitor and belonging chosen electrical components, the air gap in the primary Tesla coil (air transformer and spark gap in the exit of the coil. The investigation of the oscillating process Tesla coil‟s system using the simulation model in MATLAB & SIMULINK have given the exact solution the enigma named the generating high voltage and high frequency the Tesla‟s coil. The inductance voltage from the spark current in the primary (coil with its high voltage impulse excites the oscillating series circuit Ce-L3-R3 on the secondary of the air transformer to its own damped oscillations

  14. Hybrid-PIC Modeling of a High-Voltage, High-Specific-Impulse Hall Thruster

    Science.gov (United States)

    Smith, Brandon D.; Boyd, Iain D.; Kamhawi, Hani; Huang, Wensheng

    2013-01-01

    The primary life-limiting mechanism of Hall thrusters is the sputter erosion of the discharge channel walls by high-energy propellant ions. Because of the difficulty involved in characterizing this erosion experimentally, many past efforts have focused on numerical modeling to predict erosion rates and thruster lifespan, but those analyses were limited to Hall thrusters operating in the 200-400V discharge voltage range. Thrusters operating at higher discharge voltages (V(sub d) >= 500 V) present an erosion environment that may differ greatly from that of the lower-voltage thrusters modeled in the past. In this work, HPHall, a well-established hybrid-PIC code, is used to simulate NASA's High-Voltage Hall Accelerator (HiVHAc) at discharge voltages of 300, 400, and 500V as a first step towards modeling the discharge channel erosion. It is found that the model accurately predicts the thruster performance at all operating conditions to within 6%. The model predicts a normalized plasma potential profile that is consistent between all three operating points, with the acceleration zone appearing in the same approximate location. The expected trend of increasing electron temperature with increasing discharge voltage is observed. An analysis of the discharge current oscillations shows that the model predicts oscillations that are much greater in amplitude than those measured experimentally at all operating points, suggesting that the differences in oscillation amplitude are not strongly associated with discharge voltage.

  15. Empathy costs: Negative emotional bias in high empathisers.

    Science.gov (United States)

    Chikovani, George; Babuadze, Lasha; Iashvili, Nino; Gvalia, Tamar; Surguladze, Simon

    2015-09-30

    Excessive empathy has been associated with compassion fatigue in health professionals and caregivers. We investigated an effect of empathy on emotion processing in 137 healthy individuals of both sexes. We tested a hypothesis that high empathy may underlie increased sensitivity to negative emotion recognition which may interact with gender. Facial emotion stimuli comprised happy, angry, fearful, and sad faces presented at different intensities (mild and prototypical) and different durations (500ms and 2000ms). The parameters of emotion processing were represented by discrimination accuracy, response bias and reaction time. We found that higher empathy was associated with better recognition of all emotions. We also demonstrated that higher empathy was associated with response bias towards sad and fearful faces. The reaction time analysis revealed that higher empathy in females was associated with faster (compared with males) recognition of mildly sad faces of brief duration. We conclude that although empathic abilities were providing for advantages in recognition of all facial emotional expressions, the bias towards emotional negativity may potentially carry a risk for empathic distress. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

  16. High Voltage Installation of PS Linac 1 Preinjector

    CERN Multimedia

    CERN PhotoLab

    1974-01-01

    The high-voltage installation of the linac 1 preinjector in its house-sized Faraday cage. Originally driven by a 520 kV Cockcroft-Walton generator, at the time of this picture the HV came from a 520 kV SAMES generator. The column in the front carries a capacitor. The cubicle in the right background is the electronics platform (see 7403120). The round structure at left houses the ion source, from where the protons (and sometimes other ions), electrostatically accelerated to 520 keV, enter the Alvarez structure of linac 1, to be accelerated to 50 MeV. Jean-Luc Vallet is busy with servicing the installation. See also 7403064X, 7403066X.

  17. Control Strategy for Cascaded Medium - High Voltage STATCOM

    Directory of Open Access Journals (Sweden)

    Libing Chen

    2013-12-01

    Full Text Available Control strategy is researched for cascaded medium high static synchronous compensator to provide synthetic compensation ability of reactive power, harmonics and asymmetric currents. Basing on selective harmonic compensation strategy, a reference current detection method utilizing the combination of synchronous reference frame transformation and discrete Fourier transformation is proposed. The tracking control of instruction current is implemented by multi-carrier pulse width modulation (PWM. In allusion to the multi-carrier PWM, the capacitor voltage balancing control at the dc side is realized by a type of software based on the energy balance principle of the inverter bridge. The proposed control strategy is convenient for engineering implementation given its low calculation burden and simplicity. The effectiveness of the proposed control strategy is proven by both simulation and experimental results.

  18. High voltage direct current modelling in optimal power flows

    Energy Technology Data Exchange (ETDEWEB)

    Ambriz-Perez, H. [Comision Federal de Electricidad, Mexico, Unidad de Ingenieria Especializada, Rio Rodano No. 14 - Piso 10, Sala 1002, Col. Cuauhtemoc, C.P. 06598, Mexico, D.F. (Mexico); Acha, E. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G128LT, Scotland (United Kingdom); Fuerte-Esquivel, C.R. [Faculty of Electrical Engineering, Universidad Michoacana de San Nicolas de Hidalgo, Morelia 58030, Michoacan (Mexico)

    2008-03-15

    Two-terminal high voltage direct current (HVDC) transmission links are in operation throughout the world. They are key elements in electrical power networks; their representation is oversimplified or ignored in most power system studies. This is particularly the case in Optima Power Flow (OPF) studies. Hence, an OPF program has been extended to incorporate HVDC links, taking due account of overlapping and power transfer control characteristics. This is a new development in Newton Optimal Power Flows, where the converter equations are included directly in the matrix W. The method is indeed a unified one since the solution vector is extended to accommodate the DC variables. The HVDC link model correctly takes into account the relevant DC limit variables. The impact of HVDC links on OPF studies is illustrated by numeric examples, which includes a 5-node system, the AEP 14-node and a 166-node system. (author)

  19. High-voltage, low-inductance gas switch

    Science.gov (United States)

    Gruner, Frederick R.; Stygar, William A.

    2016-03-22

    A low-inductance, air-insulated gas switch uses a de-enhanced annular trigger ring disposed between two opposing high voltage electrodes. The switch is DC chargeable to 200 kilovolts or more, triggerable, has low jitter (5 ns or less), has pre-fire and no-fire rates of no more than one in 10,000 shots, and has a lifetime of greater than 100,000 shots. Importantly, the switch also has a low inductance (less than 60 nH) and the ability to conduct currents with less than 100 ns rise times. The switch can be used with linear transformer drives or other pulsed-power systems.

  20. Architecture for a High-to-Medium-Voltage Power Converter

    Science.gov (United States)

    Vorpenian, Vatche

    2008-01-01

    A power converter now undergoing development is required to operate at a DC input potential ranging between 5.5 and 10 kV and a DC output potential of 400 V at a current up to 25 A. This power converter is also required to be sufficiently compact and reliable to fit and operate within the confines of a high-pressure case to be lowered to several miles (approx.5 km) below the surface of the ocean. The architecture chosen to satisfy these requirements calls for a series/ parallel arrangement of 48 high-frequency, pulse-width-modulation (PWM), transformer-isolation DC-to-DC power converter blocks. The input sides of the converter blocks would be connected in series so that the input potential would be divided among them, each of them being exposed to an input potential of no more than 10 kV/48 . 210 V. The series connection of inputs would also enforce a requirement that all the converter blocks operate at the same input current. The outputs of the converter blocks would be connected in a matrix comprising 6 parallel legs, each leg being a cascade of eight outputs wired in series (see figure). All the converter blocks would be identical within the tolerances of the values of their components. A single voltage feedback loop would regulate the output potential. All the converter blocks would be driven by the same PWM waveform generated by this feedback loop. The power transformer of each converter block would have a unity turns ratio and would be capable of withstanding as much as 10 kVDC between its primary and secondary windings. (Although, in general, the turns ratio could be different from unity, the simplest construction for minimizing leakage and maximizing breakdown voltage is attained at a turns ratio of unity.)

  1. Self-Biasing High Precision CMOS Current Subtractor for Current-Mode Circuits

    Directory of Open Access Journals (Sweden)

    ARSLAN, E.

    2013-11-01

    Full Text Available In this study, a novel, differential pair based, high performance and high bandwidth current subtractor is proposed. Very low equivalent impedances are obtained at input ports n and p by using source follower transistors. Furthermore, the proposed circuit is self-biasing which makes it resistant to process, supply voltage and temperature variations. The proposed current subtractor can be used as an input stage for current-mode active circuits like current differencing buffered amplifier (CDBA, operational transresistance amplifier (OTRA and current differencing transconductance amplifier (CDTA which employ current subtractors. A numeric figure-of-merit is defined and it is used to demonstrate the superior performance of the proposed circuit.

  2. High voltage and high specific capacity dual intercalating electrode Li-ion batteries

    Science.gov (United States)

    West, William C. (Inventor); Blanco, Mario (Inventor)

    2010-01-01

    The present invention provides high capacity and high voltage Li-ion batteries that have a carbonaceous cathode and a nonaqueous electrolyte solution comprising LiF salt and an anion receptor that binds the fluoride ion. The batteries can comprise dual intercalating electrode Li ion batteries. Methods of the present invention use a cathode and electrode pair, wherein each of the electrodes reversibly intercalate ions provided by a LiF salt to make a high voltage and high specific capacity dual intercalating electrode Li-ion battery. The present methods and systems provide high-capacity batteries particularly useful in powering devices where minimizing battery mass is important.

  3. First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

    Energy Technology Data Exchange (ETDEWEB)

    König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

  4. Evaluation of high temperature dielectric films for high voltage power electronic applications

    Science.gov (United States)

    Suthar, J. L.; Laghari, J. R.

    1992-01-01

    Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

  5. Low-profile high-voltage compact gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-06-30

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  6. High-Voltage-Input Level Translator Using Standard CMOS

    Science.gov (United States)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  7. Review of Adult Electrical Burn Injury Outcomes Worldwide: An Analysis of Low-Voltage vs High-Voltage Electrical Injury.

    Science.gov (United States)

    Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

    The aims of this article are to review low-voltage vs high-voltage electrical burn complications in adults and to identify novel areas that are not recognized to improve outcomes. An extensive literature search on electrical burn injuries was performed using OVID MEDLINE, PubMed, and EMBASE databases from 1946 to 2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. Fourty-four percent of these patients were low-voltage injuries (LVIs), 38.3% high-voltage injuries (HVIs), and 43.7% with voltage not otherwise specified. Forty-four percentage of studies did not characterize outcomes according to LHIs vs HVIs. Reported outcomes include surgical, medical, posttraumatic, and others (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI than in LVI. Only two studies report on psychological outcomes such as posttraumatic stress disorder. Mortality rates from electrical injuries are 2.6% in LVI, 5.2% in HVI, and 3.7% in not otherwise specified. Coroner's reports revealed a ratio of 2.4:1 for deaths caused by LVI compared with HVI. HVIs lead to greater morbidity and mortality than LVIs. However, the results of the coroner's reports suggest that immediate mortality from LVI may be underestimated. Furthermore, on the basis of this analysis, we conclude that the majority of studies report electrical injury outcomes; however, the majority of them do not analyze complications by low vs high voltage and often lack long-term psychological and rehabilitation outcomes after electrical injury indicating that a variety of central aspects are not being evaluated or assessed.

  8. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  9. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    Science.gov (United States)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  10. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Energy Technology Data Exchange (ETDEWEB)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  11. High-Voltage LED Light Engine with Integrated Driver

    Energy Technology Data Exchange (ETDEWEB)

    Soer, Wouter [Lumileds LLC, San Jose, CA (United States)

    2016-02-29

    LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm2 and 4 mm2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux

  12. High-Voltage LED Light Engine with Integrated Driver

    Energy Technology Data Exchange (ETDEWEB)

    Soer, Wouter [Lumileds LLC, San Jose, CA (United States)

    2016-02-29

    LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm2 and 4 mm2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux greater than 4100 lm, a correlated

  13. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  14. Improvement of high-voltage staircase drive circuit waveform for high-intensity therapeutic ultrasound

    Science.gov (United States)

    Tamano, Satoshi; Jimbo, Hayato; Azuma, Takashi; Yoshizawa, Shin; Fujiwara, Keisuke; Itani, Kazunori; Umemura, Shin-Ichiro

    2016-07-01

    Recently, in the treatment of diseases such as cancer, noninvasive or low-invasive modality, such as high-intensity focused ultrasound (HIFU), has been put into practice as an alternative to open surgery. HIFU induces thermal ablation of the target tissue to be treated. To improve the efficiency of HIFU, we have proposed a “triggered-HIFU” technique, which uses the combination of a short-duration, high-voltage transmission and a long-duration, medium-voltage transmission. In this method, the transmission device must endure high peak voltage for the former and the high time-average power for the latter. The triggered-HIFU sequence requires electronic scanning of the HIFU focus to maximize its thermal efficiency. Therefore, the transmission device must drive an array transducer with the number of elements on the order of a hundred or more, which requires that each part of the device that drives each element must be compact. The purpose of this work is to propose and construct such a transmission device by improving the staircase drive circuit, which we previously proposed. The main point of improvement is that both N and P MOSFETs are provided for each staircase voltage level instead of only one of them. Compared with the previous ultrasonic transmission circuit, high-voltage spikes were significantly reduced, the power consumption was decreased by 26.7%, and the transmission circuit temperature rise was decreased by 14.5 °C in the triggered-HIFU heating mode.

  15. Design of a high frequency low voltage CMOS operational amplifier

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2011-03-01

    Full Text Available A method is presented in this paper for the design of a high frequency CMOS operational amplifier (Op-Amp which operates at 3V power supply using tsmc 0.18 micron CMOS technology. The OPAMPdesigned is a two-stage CMOS OPAMP followed by an output buffer. This Operational Transconductance Amplifier (OTA employs a Miller capacitor and is compensated with a current buffer compensation technique. The unique behaviour of the MOS transistors in saturation region not only allows a designer to work at a low voltage, but also at a high frequency. Designing of two-stage op-ampsis a multi-dimensional-optimization problem where optimization of one or more parameters may easily result into degradation of others. The OPAMP is designed to exhibit a unity gain frequency of 2.02GHzand exhibits a gain of 49.02dB with a 60.50 phase margin. As compared to the conventional approach, the proposed compensation method results in a higher unity gain frequency under the same load condition.Design has been carried out in Tanner tools. Simulation results are verified using S-edit and W-edit.

  16. Design of a high frequency low voltage CMOS operational amplifier

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2011-03-01

    Full Text Available A method is presented in this paper for the design of a high frequency CMOS operational amplifier (Op-Amp which operates at 3V power supply using tsmc 0.18 micron CMOS technology. The OPAMPdesigned is a two-stage CMOS OPAMP followed by an output buffer. This OperationalTransconductance Amplifier (OTA employs a Miller capacitor and is compensated with a current buffercompensation technique. The unique behaviour of the MOS transistors in saturation region not onlyallows a designer to work at a low voltage, but also at a high frequency. Designing of two-stage op-ampsis a multi-dimensional-optimization problem where optimization of one or more parameters may easilyresult into degradation of others. The OPAMP is designed to exhibit a unity gain frequency of 2.02GHzand exhibits a gain of 49.02dB with a 60.50 phase margin. As compared to the conventional approach, theproposed compensation method results in a higher unity gain frequency under the same load condition.Design has been carried out in Tanner tools. Simulation results are verified using S-edit and W-edit.

  17. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  18. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    Science.gov (United States)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  19. A Four-Phase High Voltage Conversion Ratio Bidirectional DC-DC Converter for Battery Applications

    Directory of Open Access Journals (Sweden)

    Li-Kun Xue

    2015-06-01

    Full Text Available This study presents a four-phase interleaved high voltage conversion ratio bidirectional DC-DC converter circuit based on coupled inductors and switched capacitors, which can eliminate the defects of conventional high voltage conversion ratio bidirectional DC-DC converters in terms of high-voltage/current stress, less efficiency and low-power limitation. Parallel channels are used to reduce current stress at the low-voltage side and series connected switched capacitors are used to enlarge voltage conversion ratio, reduce voltage stress and achieve auto current sharing. This paper proposes the operation principle, feature analysis and optimization design considerations. On this basis the objectives of high voltage conversion ratio, low voltage/current stress, high power density, high efficiency and high-power applications can be achieved. Some experimental results based on a 500 W prototype converter (24 V to 48 V at low-voltage side, 400 V at high-voltage side are given to verify the theoretical analysis and the effectiveness of the proposed converter.

  20. A 600kV 15mA Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage

    Energy Technology Data Exchange (ETDEWEB)

    Su Tongling [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Zhang Yimin [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China)]. E-mail: zhangyim03@st.lzu.edu.cn; Chen Shangwen [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Liu Yantong [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Lv Huiyi [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Liu Jiangtao [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China)

    2006-05-10

    A Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage has been developed. This power supply has been operated in a ns pulse neutron generator. The maximum non-load voltage is 600kV while the working voltage and load current are 550kV and 15mA, respectively. The tested results indicate that when the power supply is operated at 300kV, 6.7mA and the input voltage varies +/-10%, the long-term stability of the output voltage is S=(0.300-1.006)x10{sup -3}. The ripple voltage is {delta}U{sub P-P}=6.2V at 300kV, 6.8-8.3mA and the ratio of {delta}U{sub P-P} to the output voltage V{sub H} is {delta}U{sub P-P}/V{sub H}=2.1x10{sup -5}.

  1. BEHAVIOUR OF BACKFILL MATERIALS FOR ELECTRICAL GROUNDING SYSTEMS UNDER HIGH VOLTAGE CONDITIONS

    Directory of Open Access Journals (Sweden)

    S. C. LIM

    2015-06-01

    Full Text Available Backfill materials like Bentonite and cement are effective in lowering grounding resistance of electrodes for a considerable period. During lightning, switching impulses and earth fault occurrences in medium and high voltage networks, the grounding system needs to handle extremely high currents either for a short duration or prolonged period respectively. This paper investigates the behaviour of bentonite, cement and sand under impulse and alternating high voltage (50Hz conditions. Fulguritic-formation was observed in all materials under alternating high voltage. The findings reveal that performance of grounding systems under high voltage conditions may significantly change from the outcomes anticipated at design stage.

  2. SOFT-SWITCHED HIGH STEP-UP DC-DC CONVERTER WITH HIGH VOLTAGE GAIN

    Directory of Open Access Journals (Sweden)

    J.C. PAUL IMMANUEL

    2013-04-01

    Full Text Available This paper presents a new design of soft switched high step-up dc-dc converter with high voltage gain which is suitable for high power applications such as Uninterruptible Power System (UPS, Photo Voltaic system and hybrid electric vehicles. The emergence of this front-end converter is to improve the shape of active input current given to the system. This converter proposes Soft-Switching technique to achieve ZVS turn on of active switches and ZCS turn off of diodes using Lr - Cr resonance in the auxiliary circuit. Therefore reduces the switching losses. Comparatively the voltage conversion ratio of this converter is higher when compared with the ordinary boost converter. Hence the voltage gain of this converter is also higher. A simulation platform is created using MATLAB which illustrates the ZVS and ZCS operation of the switches and diodes. Open loop and closed loop controlled converter systems are modelled and simulated.

  3. An Underappreciated Radiation Hazard from High Voltage Electrodes in Vacuum

    CERN Document Server

    West, Adam; DeMille, David; West, Elizabeth; Panda, Cristian; Doyle, John; Gabrielse, Gerald; Kryskow, Adam; Mitchell, Corinne

    2016-01-01

    The use of high voltage (HV) electrodes in vacuum is commonplace in physics laboratories. In such systems, it has long been known that electron emission from an HV cathode can lead to bremsstrahlung X-rays; indeed, this is the basic principle behind the operation of standard X-ray sources. However, in laboratory setups where X-ray production is not the goal and no electron source is deliberately introduced, field-emitted electrons accelerated by HV can produce X-rays as an unintended hazardous byproduct. Both the level of hazard and the safe operating regimes for HV vacuum electrode systems are not widely appreciated, at least in university laboratories. A reinforced awareness of the radiation hazards associated with vacuum HV setups would be beneficial. We present a case study of a HV vacuum electrode device operated in a university atomic physics laboratory. We describe the characterisation of the observed X-ray radiation, its relation to the observed leakage current in the device, the steps taken to contai...

  4. An Underappreciated Radiation Hazard from High Voltage Electrodes in Vacuum.

    Science.gov (United States)

    West, Adam D; Lasner, Zack; DeMille, David; West, Elizabeth P; Panda, Cristian D; Doyle, John M; Gabrielse, Gerald; Kryskow, Adam; Mitchell, Corinne

    2017-01-01

    The use of high voltage (HV) electrodes in vacuum is commonplace in physics laboratories. In such systems, it has long been known that electron emission from an HV cathode can lead to bremsstrahlung x rays; indeed, this is the basic principle behind the operation of standard x-ray sources. However, in laboratory setups where x-ray production is not the goal and no electron source is deliberately introduced, field-emitted electrons accelerated by HV can produce x rays as an unintended hazardous byproduct. Both the level of hazard and the safe operating regimes for HV vacuum electrode systems are not widely appreciated, at least in university laboratories. A reinforced awareness of the radiation hazards associated with vacuum HV setups would be beneficial. The authors present a case study of a HV vacuum electrode device operated in a university atomic physics laboratory. They describe the characterization of the observed x-ray radiation, its relation to the observed leakage current in the device, the steps taken to contain and mitigate the radiation hazard, and suggested safety guidelines.

  5. A new aluminium-ion battery with high voltage, high safety and low cost.

    Science.gov (United States)

    Sun, Haobo; Wang, Wei; Yu, Zhijing; Yuan, Yan; Wang, Shuai; Jiao, Shuqiang

    2015-07-28

    A new kind of Al-ion battery with carbon paper as the cathode, high-purity Al foil as the anode and ionic liquid as the electrolyte is proposed in this work. The significance of the presented battery is going to be an extremely high average voltage plateau of ca. 1.8 V vs. Al(3+)/Al.

  6. High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

    DEFF Research Database (Denmark)

    Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2014-01-01

    High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time.......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... to be injected before the position may be estimated. In this paper, a single pulse zero voltage injection method is proposed. The rotor position is directly estimated from the current ripple at half of the switching frequency. No machine parameters are needed and using of filters is avoided. This results...

  7. [Transient high frequency nodal rhythm after a high voltage electric shock. Report of one case].

    Science.gov (United States)

    Supervía, August; Del Baño, Francisco; Aguirre, Alfons; Membrilla, Estela

    2013-09-01

    Electrical shock can cause a direct myocardial damage and different types of arrhythmias, which are uncommon and occur more often when there is a high voltage exposure. We report a 19-year-old male that received a high voltage shock, falling thereafter from an altitude of four meters. On admission to the emergency room, he had second and third degree burns in the right hand and the left thigh. The electrocardiogram showed a nodal rhythm of 72 beats per minute. After four hours of monitoring, sinus rhythm returned spontaneously.

  8. Method and apparatus for connecting high voltage leads to a high temperature super-conducting transformer

    Science.gov (United States)

    Golner, Thomas M.; Mehta, Shirish P.

    2005-07-26

    A method and apparatus for connecting high voltage leads to a super-conducting transformer is provided that includes a first super-conducting coil set, a second super-conducting coil set, and a third super-conducting coil set. The first, second and third super-conducting coil sets are connected via an insulated interconnect system that includes insulated conductors and insulated connectors that are utilized to connect the first, second, and third super-conducting coil sets to the high voltage leads.

  9. Design of a high voltage stimulator chip for a stroke rehabilitation system.

    Science.gov (United States)

    Zeng, Lei; Yi, Xin; Lu, Sheng; Lou, Yuan; Jiang, Jianfei; Qu, Hongen; Lan, Ning; Wang, Guoxing

    2013-01-01

    This paper describes the design of an 8-channel high voltage stimulator chip for rehabilitation of stroke patients through surface stimulation, which requires high stimulation currents and high compliance voltage. The chip gets stimulation control data through its Serial Peripheral Interface (SPI), and can accordingly generate biphasic stimulation currents with different amplitudes, duration, frequencies and polarities independently for each channel. The current driver is implemented with thick oxide devices with a supply voltage up to 90V. The chip is designed in a 0.35εm X-FAB high voltage process.

  10. Installation and cosmic ray test of the high voltage system of the BESⅢdrift chamber

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    After examination of the designed high voltage power supply system of the BESⅢ drift chamber in the beam test of the full length prototype of drift chamber,a full system covering all the channels of high voltage was installed.The system's training and the high voltage value adjustment were carried out in the cosmic ray test of the BESⅢ drift chamber.The cosmic ray test for the full system and its final installation on the BESⅢ drift chamber were reported.The full system of high voltage power supply works stably and reliably.

  11. Enhanced thermal stability and mechanical properties of nitrogen deficient titanium aluminum nitride (Ti0.54Al0.46Ny) thin films by tuning the applied negative bias voltage

    Science.gov (United States)

    Calamba, K. M.; Schramm, I. C.; Johansson Jõesaar, M. P.; Ghanbaja, J.; Pierson, J. F.; Mücklich, F.; Odén, M.

    2017-08-01

    Aspects on the phase stability and mechanical properties of nitrogen deficient (Ti0.54Al0.46)Ny alloys were investigated. Solid solution alloys of (Ti,Al)N were grown by cathodic arc deposition. The kinetic energy of the impinging ions was altered by varying the substrate bias voltage from -30 V to -80 V. Films deposited with a high bias value of -80 V showed larger lattice parameter, finer columnar structure, and higher compressive residual stress resulting in higher hardness than films biased at -30 V when comparing their as-deposited states. At elevated temperatures, the presence of nitrogen vacancies and point defects (anti-sites and self-interstitials generated by the ion-bombardment during coating deposition) in (Ti0.54Al0.46)N0.87 influence the driving force for phase separation. Highly biased nitrogen deficient films have point defects with higher stability during annealing, which cause a delay of the release of the stored lattice strain energy and then accelerates the decomposition tendencies to thermodynamically stable c-TiN and w-AlN. Low biased nitrogen deficient films have retarded phase transformation to w-AlN, which results in the prolongment of age hardening effect up to 1100 °C, i.e., the highest reported temperature for Ti-Al-N material system. Our study points out the role of vacancies and point defects in engineering thin films with enhanced thermal stability and mechanical properties for high temperature hard coating applications.

  12. Rectifying structure with high voltage operation based on CuBO{sub 2} as an UV photocatalyst

    Energy Technology Data Exchange (ETDEWEB)

    Soylu, M., E-mail: soylum74@yahoo.com [Department of Physics, Faculty of Sciences and Arts, Bingol University, Bingol (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Omran, Saad Bin [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig 23169 (Turkey)

    2014-12-25

    Highlight: • We have fabricated nanostructured CuBO{sub 2} by spin coating on the p-Si. • CuBO{sub 2}/p-Si diode is a new rectifying structure with photosensing. • The photocurrent in the reverse bias voltage is increased by increasing photo-illumination intensity. • CuBO{sub 2}/p-Si/Al diode is a candidate for producing high tension protection circuit. - Abstract: CuBO{sub 2}/p-Si diode is a new rectifying structure with photosensing, which is a candidate for producing high voltage protection circuit in electronic application. It has been seen that the photocurrent in the reverse bias I–V characteristic is strongly increased by photo-illumination. It is believed that the combination of thin CuBO{sub 2} layer and p-Si will provide high voltage protection level, which does not exist for conventional Si diodes. The capacitance and conductance–voltage characteristics were measured at various frequencies. The results indicate that the electrical parameters of CuBO{sub 2}/p-Si diode are affected by the series resistance and interface states. The optical properties of the CuBO{sub 2} thin film were analyzed by UV–vis–NIR spectrophotometry and FTIR studies. The optical band gap of the CuBO{sub 2} is located in the ultraviolet (UV) range. In this spectral range, the B-O-B bonds and relationship between Cu{sup 2+}–O are confirmed.

  13. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    Science.gov (United States)

    El Fatimy, A.; Dyakonova, N.; Meziani, Y.; Otsuji, T.; Knap, W.; Vandenbrouk, S.; Madjour, K.; Théron, D.; Gaquiere, C.; Poisson, M. A.; Delage, S.; Prystawko, P.; Skierbiszewski, C.

    2010-01-01

    We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov-Shur plasma wave instability in the gated two-dimensional electron gas.

  14. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung

    2009-10-25

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  15. A High Voltage High Frequency Resonant Inverter for Supplying DBD Devices with Short Discharge Current Pulses

    OpenAIRE

    Bonnin, Xavier; Brandelero, Julio; Videau, Nicolas; Piquet, Hubert; Meynard, Thierry

    2014-01-01

    International audience; In this paper, the merits of a high-frequency resonant converter for supplying dielectric barrier discharges (DBD) devices are established. It is shown that, thanks to its high-frequency operating condition, such a converter allows to supply DBD devices with short discharge current pulses, a high repetition rate, and to control the injected power. In addition, such a topology eliminates the matter of connecting a high-voltage transformer directly across the DBD device ...

  16. High-Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS

    CERN Document Server

    Mak, Pui-In

    2012-01-01

    This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes.  Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques.    Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.  

  17. Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Plasma immersion ion implantation (PIII) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the processand cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.

  18. The thermal regime around buried submarine high-voltage cables

    Science.gov (United States)

    Emeana, C. J.; Hughes, T. J.; Dix, J. K.; Gernon, T. M.; Henstock, T. J.; Thompson, C. E. L.; Pilgrim, J. A.

    2016-08-01

    The expansion of offshore renewable energy infrastructure and the need for trans-continental shelf power transmission require the use of submarine high-voltage (HV) cables. These cables have maximum operating surface temperatures of up to 70 °C and are typically buried 1-2 m beneath the seabed, within the wide range of substrates found on the continental shelf. However, the heat flow pattern and potential effects on the sedimentary environments around such anomalously high heat sources in the near-surface sediments are poorly understood. We present temperature measurements from a 2-D laboratory experiment representing a buried submarine HV cable, and identify the thermal regimes generated within typical unconsolidated shelf sediments—coarse silt, fine sand and very coarse sand. We used a large (2 × 2.5 m2) tank filled with water-saturated spherical glass beads (ballotini) and instrumented with a buried heat source and 120 thermocouples to measure the time-dependent 2-D temperature distributions. The observed and corresponding Finite Element Method simulations of the steady state heat flow regimes and normalized radial temperature distributions were assessed. Our results show that the heat transfer and thus temperature fields generated from submarine HV cables buried within a range of sediments are highly variable. Coarse silts are shown to be purely conductive, producing temperature increases of >10 °C up to 40 cm from the source of 60 °C above ambient; fine sands demonstrate a transition from conductive to convective heat transfer between cf. 20 and 36 °C above ambient, with >10 °C heat increases occurring over a metre from the source of 55 °C above ambient; and very coarse sands exhibit dominantly convective heat transfer even at very low (cf. 7 °C) operating temperatures and reaching temperatures of up to 18 °C above ambient at a metre from the source at surface temperatures of only 18 °C. These findings are important for the surrounding near

  19. High-voltage breakdown studies on Si microstrip detectors

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Calefato, G; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Muhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Zie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).

  20. High-PSRR High-Order Curvature-Compensated CMOS Bandgap Voltage Reference

    Institute of Scientific and Technical Information of China (English)

    Qianneng Zhou; Yunsong Li; Jinzhao Lin; Hongjuan Li; Yu Pang; Wei Luo

    2015-01-01

    A high⁃PSRR high⁃order curvature⁃compensated CMOS bandgap voltage reference (BGR), which has the performances of high power supply rejection ratio ( PSRR) and low temperature coefficient, is designed in SMIC 0�18 μm CMOS process. Compared to the conventional curvature⁃compensated BGR which adopted a piecewise⁃linear current, the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise⁃linear current and a current proportional 1�5 party to the absolute temperature T. By adopting a low dropout ( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD , the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2�1 × 10-6/℃ with a 1�8 V power supply voltage and a line regulation of 4�9 μV/V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz have the PSRR of -106�388, -106�388, -106�38, -105�93 and-88�67 dB respectively.

  1. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  2. Simple Floquet-Wannier-Stark-Andreev viewpoint and emergence of low-energy scales in a voltage-biased three-terminal Josephson junction

    Science.gov (United States)

    Mélin, Régis; Caputo, Jean-Guy; Yang, Kang; Douçot, Benoît

    2017-02-01

    A three-terminal Josephson junction consists of three superconductors coupled coherently to a small nonsuperconducting island, such as a diffusive metal, a single or double quantum dot. A specific resonant single quantum dot three-terminal Josephson junction (Sa,Sb,Sc) biased with voltages (V ,-V ,0 ) is considered, but the conclusions hold more generally for resonant semiconducting quantum wire setups. A simple physical picture of the steady state is developed, using Floquet theory. It is shown that the equilibrium Andreev bound states (for V =0 ) evolve into nonequilibrium Floquet-Wannier-Stark-Andreev (FWS-Andreev) ladders of resonances (for V ≠0 ). These resonances acquire a finite width due to multiple Andreev reflection (MAR) processes. We also consider the effect of an extrinsic linewidth broadening on the quantum dot, introduced through a Dynes phenomenological parameter. The dc-quartet current manifests a crossover between the extrinsic relaxation dominated regime at low voltage to an intrinsic relaxation due to MAR processes at higher voltage. Finally, we study the coupling between the two FWS-Andreev ladders due to Landau-Zener-Stückelberg transitions, and its effect on the crossover in the relaxation mechanism. Three important low-energy scales are identified, and a perspective is to relate those low-energy scales to a recent noise cross-correlation experiment (Y. Cohen et al., arXiv:1606.08436).

  3. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study...

  4. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study of us...

  5. Effects of positive interpretive bias modification in highly anxious individuals

    NARCIS (Netherlands)

    Salemink, E.; van den Hout, M.; Kindt, M.

    2009-01-01

    Over the past 20 years evidence has accumulated that individuals suffering from anxiety tend to interpret ambiguous information as threatening. Considering the causal role of this interpretive bias in anxiety, it was recently established that modifying interpretive biases influences anxiety. This

  6. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  7. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  8. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Science.gov (United States)

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    1982-01-01

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  9. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Science.gov (United States)

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  10. Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage

    Science.gov (United States)

    Iida, Kenji; Noda, Masashi; Nobusada, Katsuyuki

    2017-02-01

    We have developed a theoretical approach for describing the electronic properties of hetero-interface systems under an applied electrode bias. The finite-temperature density functional theory is employed for controlling the chemical potential in their interfacial region, and thereby the electronic charge of the system is obtained. The electric field generated by the electronic charging is described as a saw-tooth-like electrostatic potential. Because of the continuum approximation of dielectrics sandwiched between electrodes, we treat dielectrics with thicknesses in a wide range from a few nanometers to more than several meters. Furthermore, the approach is implemented in our original computational program named grid-based coupled electron and electromagnetic field dynamics (GCEED), facilitating its application to nanostructures. Thus, the approach is capable of comprehensively revealing electronic structure changes in hetero-interface systems with an applied bias that are practically useful for experimental studies. We calculate the electronic structure of a SiO2-graphene-boron nitride (BN) system in which an electrode bias is applied between the graphene layer and an electrode attached on the SiO2 film. The electronic energy barrier between graphene and BN is varied with an applied bias, and the energy variation depends on the thickness of the BN film. This is because the density of states of graphene is so low that the graphene layer cannot fully screen the electric field generated by the electrodes. We have demonstrated that the electronic properties of hetero-interface systems are well controlled by the combination of the electronic charging and the generated electric field.

  11. High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

    Science.gov (United States)

    de Tournadre, Grégoire; Reisdorffer, Frédéric; Rödel, Reinhold; Simonetti, Olivier; Klauk, Hagen; Giraudet, Louis

    2016-03-01

    A scanning surface potential measurement technique suited for thin-film devices operating under high voltages is reported. A commercial atomic force microscope has been customized to enable a feedback-controlled and secure surface potential measurement based on phase-shift detection under ambient conditions. Measurements of the local potential profile along the channel of bottom-gate organic thin-film transistors (TFTs) are shown to be useful to disentangle the contributions from the channel and contacts to the device performance. Intrinsic contact current-voltage characteristics have been measured on bottom-gate, top-contact (staggered) TFTs based on the small-molecule semiconductor dinaphtho[2,3-b:2',3-f]thieno[3,2-b]thiophene (DNTT) and on bottom-gate, bottom-contact (coplanar) TFTs based on the semiconducting polymer polytriarylamine (PTAA). Injection has been found to be linear in the staggered DNTT TFTs and nonlinear in the coplanar PTAA TFTs. In both types of TFT, the injection efficiency has been found to improve with increasing gate bias in the accumulation regime. Contact resistances as low as 130 Ω cm have been measured in the DNTT TFTs. A method that eliminates the influence of bias-stress-induced threshold-voltage shifts when measuring the local charge-carrier mobility in the channel is also introduced, and intrinsic channel mobilities of 1.5 cm2 V-1 s-1 and 1.1 × 10-3 cm2 V-1 s-1 have been determined for DNTT and PTAA. In both semiconductors, the mobility has been found to be constant with respect to the gate bias. Despite its simplicity, the Kelvin probe force microscopy method reported here provides robust and accurate surface potential measurements on thin-film devices under operation and thus paves the way towards more extensive studies of particular interest in emerging fields of solid-state electronics.

  12. A new low-voltage and high-speed sense amplifier for flash memory

    Institute of Scientific and Technical Information of China (English)

    Guo Jiarong; Ran Feng

    2011-01-01

    A new low-voltage and high-speed sense amplifier is presented,based on a very simple direct currentmode comparison.It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage,low power and high precision.The proposed amplifier can sense a 0.5 μA current gap and work with a lowest voltage of 1 V.In addition,the current power of a single amplifier is optimized by 15%.

  13. High Energy Density Battery Lithium Thionyl Chloride Improved Reverse Voltage Design.

    Science.gov (United States)

    1981-12-01

    BATTERY LITHIUM THIONYL CHLORIDE IMPROVED R-ETC(U) DEC 81 A E ZOLLA N660011-C-0310...HIGH ENERGY DENSITY BATTERY LITHIUM THIONYL CHLORIDE IMPROVED REVERSE VOLTAGE DESIGN Dr. A. E. Zolla Altus Corporation C:1 1610 Crane Court San Jose...reverse aide If necesary and identify by block number) Lithium Battery Lithium Thionyl Chloride High Energy Density Battery Voltage Reversal Battery

  14. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Science.gov (United States)

    2010-07-01

    ... underground. 75.802 Section 75.802 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as...

  15. Debugging on High-voltage Power Supply,Focusing Power Supply and Magnetic Field Power Supply

    Institute of Scientific and Technical Information of China (English)

    TU; Rui

    2015-01-01

    High-voltage power supply,focusing power supply and magnetic field power supply are the main parts of the power supply system of the EMIS(Electro-Magnetic Isotope Separator)supplying the ion source.In 2015,a high-voltage power supply,power supply for focusing and

  16. High-voltage, short-risetime pulse generator based on a ferrite pulse sharpener

    Energy Technology Data Exchange (ETDEWEB)

    Seddon, N.; Thornton, E.

    1988-11-01

    A high-voltage, short-risetime pulse generator is described. The generator consists of a Marx bank, which produces an initial high-voltage pulse, and a ferrite pulse sharpener that reduces the risetime of the pulse. The generator delivers 70-kV, 350-ps risetime pulses into a 50-..cap omega.. load.

  17. MATHEMATICAL MODEL OF HYBRID ELECTRIC VEHICLE HIGH-VOLTAGE BATTERY IDENTIFICATION

    Directory of Open Access Journals (Sweden)

    S. Serikov

    2010-01-01

    Full Text Available The mathematical model of hybrid electric vehicle NiMH high-voltage battery is obtained. This model allows to explore the interaction of vehicle tractive electric drive and high-voltage battery at the electric motive power motion and in the process of recuperation of braking kinetic energy.

  18. A Novel Series Connected Batteries State of High Voltage Safety Monitor System for Electric Vehicle Application

    Directory of Open Access Journals (Sweden)

    Qiang Jiaxi

    2013-01-01

    Full Text Available Batteries, as the main or assistant power source of EV (Electric Vehicle, are usually connected in series with high voltage to improve the drivability and energy efficiency. Today, more and more batteries are connected in series with high voltage, if there is any fault in high voltage system (HVS, the consequence is serious and dangerous. Therefore, it is necessary to monitor the electric parameters of HVS to ensure the high voltage safety and protect personal safety. In this study, a high voltage safety monitor system is developed to solve this critical issue. Four key electric parameters including precharge, contact resistance, insulation resistance, and remaining capacity are monitored and analyzed based on the equivalent models presented in this study. The high voltage safety controller which integrates the equivalent models and control strategy is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated, and the online electric parameters monitor strategy is analyzed and discussed. The test results indicate that the high voltage safety monitor system designed in this paper is suitable for EV application.

  19. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    Science.gov (United States)

    Murty, Balarama Vempaty

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  20. Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

    Directory of Open Access Journals (Sweden)

    Yu-En Wu

    2016-09-01

    Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.

  1. Model biases in high-burnup fast reactor simulations

    Energy Technology Data Exchange (ETDEWEB)

    Touran, N.; Cheatham, J.; Petroski, R. [TerraPower LLC, 11235 S.E. 6th St, Bellevue, WA 98004 (United States)

    2012-07-01

    A new code system called the Advanced Reactor Modeling Interface (ARMI) has been developed that loosely couples multiscale, multiphysics nuclear reactor simulations to provide rapid, user-friendly, high-fidelity full systems analysis. Incorporating neutronic, thermal-hydraulic, safety/transient, fuel performance, core mechanical, and economic analyses, ARMI provides 'one-click' assessments of many multi-disciplined performance metrics and constraints that historically require iterations between many diverse experts. The capabilities of ARMI are implemented in this study to quantify neutronic biases of various modeling approximations typically made in fast reactor analysis at an equilibrium condition, after many repetitive shuffles. Sensitivities at equilibrium that result in very high discharge burnup are considered ( and >20% FIMA), as motivated by the development of the Traveling Wave Reactor. Model approximations discussed include homogenization, neutronic and depletion mesh resolution, thermal-hydraulic coupling, explicit control rod insertion, burnup-dependent cross sections, fission product model, burn chain truncation, and dynamic fuel performance. The sensitivities of these approximations on equilibrium discharge burnup, k{sub eff}, power density, delayed neutron fraction, and coolant temperature coefficient are discussed. (authors)

  2. HIGH VOLTAGE SMALL – SIZED ALTERNATIVE CURRENT RESISTIVE DIVIDERS FROM MICROWIRE

    Directory of Open Access Journals (Sweden)

    Berzan V.P.

    2011-04-01

    Full Text Available The paper discusses the design parameters and characteristics of the new product, the resistive voltage divider produced from microwire for measuring high-voltage alternating current. Resistive dividers are designed for use in AC circuits and power-frequency electric traction network traffic. Dividers have smaller mass-dimensional size compared with the measuring voltage transformers and higher accuracy class 0.2 at a fixed frequency.

  3. Unveiling self-assembled monolayers' potential for molecular spintronics: spin transport at high voltage.

    Science.gov (United States)

    Galbiati, Marta; Barraud, Clément; Tatay, Sergio; Bouzehouane, Karim; Deranlot, Cyrile; Jacquet, Eric; Fert, Albert; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2012-12-18

    Molecular magnetic tunnel junctions using self-assembled monolayers (SAMs) as tunnel barriers show stable and efficient spin transport properties. Large tunnel magnetoresistance with a flat bias voltage dependence of the magnetoresistance is observed in La(2/3) Sr(1/3) MnO(3) /dodecylphosphonic acid SAM/Co nanocontacts. This opens the door to spintronic tailoring though SAM engineering and could also lead to new venues for spin injection in organic devices.

  4. Analysis of cutting-edge techniques in the high voltage and high power adjustable speed drive systems

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The high voltage and high power adjustable speed drive (ASD) system is one of the most attractive fields in power electronics, and it is also a very crucial technique for energy saving and emission reduction. This paper discussed and analyzed the main cutting-edge knowledge and issues in the process of exploiting the high voltage and high power ASD system.

  5. Loading Analysis of Modular Multi-level Converter for Offshore High-voltage DC Application under Various Grid Faults

    DEFF Research Database (Denmark)

    Liu, Hui; Ma, Ke; Loh, Poh Chiang;

    2016-01-01

    The modular multi-level converter has become an interesting candidate in high-voltage DC systems due to its higher voltage levels and modular construction. Low-voltage ride-through is an important grid requirement for modular multi-level converter–high-voltage DC since not only causes control cha...... be of importance for the design of the cooling system....

  6. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  7. Simultaneous Kerr and Faraday investigations of boundary magnetization and order parameter switching in voltage-controllable exchange bias films

    Science.gov (United States)

    Wang, Junlei; Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Magnetoelectric oxides are of great interest for ultra-low power spintronics with memory and logic function. A key property for the realization of electrically switchable state variables is the voltage-controlled boundary magnetization in magnetoelectric antiferromagnets. It allows electric switching of an adjacent exchange coupled ferromagnetic layer in the absence of dissipative currents. Previous surface sensitive measurements of boundary magnetization in thin films of the archetypical magnetoelectric antiferromagnet chromia lacked explicit demonstration of the predicted rigid coupling between the bulk antiferromagnetic order parameter and the boundary magnetization. We designed a magneto-optical setup allowing simultaneous measurement of Kerr and Faraday rotation. Our experiments correlate electric field induced bulk magneto-optical effects (non-reciprocal rotation), including the response on switching of the antiferromagnetic order parameter, with the boundary magnetization. Our results suggest that switching of a ferromagnetic film strongly exchange coupled to a magnetoelectric antiferromagnetic ultra-thin film allows switching of the antiferromagnetic order parameter. We investigate the possibility that this switching phenomenon might induce a voltage pulse via a generalized variation of the inverse linear magnetoelectric effect. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC.

  8. Fast Coordinated Control of DFIG Wind Turbine Generators for Low and High Voltage Ride-Through

    Directory of Open Access Journals (Sweden)

    Yun Wang

    2014-06-01

    Full Text Available This paper presents a fast coordinated control scheme of the rotor side converter (RSC, the Direct Current (DC chopper and the grid side converter (GSC of doubly fed induction generator (DFIG wind turbine generators (WTGs to improve the low voltage ride through (LVRT and high voltage ride through (HVRT capability of the DFIG WTGs. The characteristics of DFIG WTGs under voltage sags and swells were studied focusing on the DFIG WTG stator flux and rotor voltages during the transient periods of grid voltage changes. The protection schemes of the rotor crowbar circuit and the DC chopper circuit were proposed considering the characteristics of the DFIG WTGs during voltage changes. The fast coordinated control of RSC and GSC were developed based on the characteristic analysis in order to realize efficient LVRT and HVRT of the DFIG WTGs. The proposed fast coordinated control schemes were verified by time domain simulations using Matlab-Simulink.

  9. Summary of transient high-voltage calculations for the FRX-C experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Rej, D.J.

    1982-06-01

    Calculations of the electrical circuit equations are performed over a wide range of parameters corresponding to the FRX-C field-reversed THETA-pinch experiment at Los Alamos. Without any plasma or external damping, serious voltage doubling and quadrupling of the main capacitor bank charge voltage are observed. These oscillating high voltages are found to be adequately suppressed by the strategic placement of external snubber circuitry. On the other hand, no doubling of the THETA-pinch preionization bank charge voltage is found. Calculations of the equations for the z-pinch preionization circuit are also performed.

  10. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  11. DEVELOPMENT OF HIGH-VOLTAGE HIGH-FREQUENCY POWER SUPPLY FOR OZONE GENERATION

    Directory of Open Access Journals (Sweden)

    NACERA HAMMADI

    2016-05-01

    Full Text Available A high-voltage high-frequency power supply for ozone generation is presented in this paper. Ozone generation is intended to be used in air and in water disinfection. A power stage consisting of a single-phase full bridge inverter for regulating the output power, a current push-pull inverter (driver and a control circuit are described and analyzed. This laboratory build power supply using a high voltage ferrite transformer and a PIC microcontroller was employed to energize a dielectric barrier discharge (DBD ozone generator. The inverter working on the basis of control strategy is of simple structure and has a variation range of the working frequency in order to obtain the optimal frequency value. The experimental results concerning electrical characterization and water treatment using a cylindrical DBD ozone generator supplied by this power supply are given in the end.

  12. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  13. Spatial and temporal instabilities in high voltage power devices

    Energy Technology Data Exchange (ETDEWEB)

    Milady, Saeed

    2010-01-29

    Dynamic avalanche can occur during the turn-off process of high voltage bipolar devices, e.g. IGBTs and p{sup +}n{sup -}n{sup +} power diodes, that may result in spatial instabilities of the homogeneous current density distribution across the device and the formation of current filaments. Filaments may cause the destruction of the device, mainly because of the high local temperatures. The first part of this work is dedicated to the current filament behavior. The positive feedback mechanisms caused by the transient current flow through the gate capacitance of an IGBT operating under short circuit conditions may result in oscillations and temporal instabilities of the IGBT current. The oscillations may cause electromagnetic interference (EMI). Furthermore, the positive feedback mechanism may accelerate the over-heating of the device and result in a thermal run-away. This is the subject of the second part of this work. In the first part of this work using the device simulation results of power diodes the underlying physical mechanisms of the filament dynamic is investigated. Simulation results of diode structures with evenly distributed doping inhomogeneities show that, the filament motion gets smoother as the distance between the inhomogeneities decreases. Hopping to faraway inhomogeneities turns into the hopping to neighboring ones and finally a smooth motion. In homogeneous structures the slow inhibitory effect of the electron-hole plasma extraction and the fast activation, due to hole current flowing along the filament, result in a smooth filament motion. An analytical model for the filament velocity under isothermal conditions is presented that can reproduce the simulation data satisfactorily. The influence of the boundary conditions on the filament behavior is discussed. The positive beveled edge termination prohibits a long stay of the filament at the edge reducing the risk of filament pinning. Self-heating effects may turn the initially electrically triggered

  14. An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

    Directory of Open Access Journals (Sweden)

    Vijith Vijayakumaran Nair

    2015-06-01

    Full Text Available In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-μm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-μm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01–100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

  15. Response of low voltage networks with high penetration of photovoltaic systems to transmission network faults

    NARCIS (Netherlands)

    Skaloumpakas, K.; Boemer, J.C.; Van Ruitenbeek, E.; Gibescu, M.

    2014-01-01

    The installed capacity of photovoltaic (PV) systems connected to low voltage (LV) networks in Germany has increased to more than 25 GW. Current grid codes still mandate these PV systems to disconnect in case of voltage dips below 0.8 p.u. The resulting response of LV distribution systems with high p

  16. Fast Coordinated Control of DFIG Wind Turbine Generators for Low and High Voltage Ride-Through

    DEFF Research Database (Denmark)

    Wang, Yun; Wu, Qiuwei; Xu, Honghua

    2014-01-01

    This paper presents a fast coordinated control scheme of the rotor side converter (RSC), the DC chopper and the grid side converter (GSC) of doubly fed induction generator (DFIG) wind turbine generators (WTGs) which is to improve the low voltage ride through (LVRT) and high voltage ride through (...... verified by time domain simulations using MATLAB-Simulink....

  17. Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

    DEFF Research Database (Denmark)

    Zhang, Zhe; Andersen, Michael A. E.

    2015-01-01

    ), but the voltage balancing across the series - connected high voltage IGBTs is a critical issue and accordi ngly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi - level Buck converter based Class - D amplifier...

  18. Development of Fiber Optically Driven Instrument for High-voltage Line Current

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The measurement theorem of fiber optically driven instrument for high-voltage line current is presented. The PLL voltage-frequency-narrow pulse principle and its micro-consumption mechanism are proposed, followed by analysis on the two main factors affecting PLL measurement precision. A software design scheme using 80C196KB micro-controller is introduced. The experiment result is satisfactory.

  19. The Dynamic Fracture Process in Rocks Under High-Voltage Pulse Fragmentation

    Science.gov (United States)

    Cho, Sang Ho; Cheong, Sang Sun; Yokota, Mitsuhiro; Kaneko, Katsuhiko

    2016-10-01

    High-voltage pulse technology has been applied to rock excavation, liberation of microfossils, drilling of rocks, oil and water stimulation, cleaning castings, and recycling products like concrete and electrical appliances. In the field of rock mechanics, research interest has focused on the use of high-voltage pulse technology for drilling and cutting rocks over the past several decades. In the use of high-voltage pulse technology for drilling and cutting rocks, it is important to understand the fragmentation mechanism in rocks subjected to high-voltage discharge pulses to improve the effectiveness of drilling and cutting technologies. The process of drilling rocks using high-voltage discharge is employed because it generates electrical breakdown inside the rocks between the anode and cathode. In this study, seven rock types and a cement paste were electrically fractured using high-voltage pulse discharge to investigate their dielectric breakdown properties. The dielectric breakdown strengths of the samples were compared with their physical and mechanical properties. The samples with dielectric fractured were scanned using a high-resolution X-ray computed tomography system to observe the fracture formation associated with mineral constituents. The fracture patterns of the rock samples were analyzed using numerical simulation for high-voltage pulse-induced fragmentation that adopts the surface traction and internal body force conditions.

  20. Analysis of Schottky barrier heights of metal/SiC contacts and its possible application to high-voltage rectifying devices

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, A. [Tokyo Inst. of Technol. (Japan). Dept. of Phys. Electron.; Matsunami, H. [Dept. of Electronic Science and Engineering, Kyoto Univ. (Japan)

    1997-07-16

    Schottky contacts of metal/3C-, 6H-, and 4H-SiC systems are investigated in this review. Most Schottky contacts having large barrier heights show good characteristics with low ideality factors. The barrier height depends on the metal work function without strong Fermi-level pinning for all polytypes, and linear relationships with slopes of about 0.2 to 0.7 are observed between the barrier height and the metal work function. Based on the analysis of metal/SiC systems, the fabrication of high-voltage rectifiers has been reported, and high voltages from 400 to 1100 V have been achieved using Pt/, Ti/, and Au/6H-SiC structures. In addition, high-temperature operation at 400 C is performed for an Au/6H-SiC structure while supporting a high reverse bias (460 V). Using Ti/4H-SiC structures, high-voltage ({approx}1000 V) and low-power loss characteristics are realized, which is superior to Ti/6H-SiC Schottky rectifiers. To improve the reverse bias characteristics, an edge termination technique is employed for Ti/4H-SiC Schottky rectifiers, and the devices show excellent characteristics with a higher blocking voltage up to 1750 V compared with unterminated devices. (orig.) 78 refs.

  1. Role of Stress Voltage on Structural Degradation of GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    2010-01-01

    GaN high-electron-mobility transistors ( HEMTs ) under high- voltage electrical stress degradation in the drain and gate current is electric field... GaN HEMTs after long-term DC and RF life tests at high voltage [12–16]. Crystallographic defects such as pits and cracks have been observed at the...created by high-voltage stress in GaN HEMTs . A complementary study of the evolution of these de- fects in the cross section as a function of stress

  2. Note: Wide-range and high-resolution on-chip delay measurement circuit with low supply-voltage sensitivity for SoC applications

    Science.gov (United States)

    Sheng, Duo; Hung, Yu-Chan

    2016-11-01

    This paper presents an on-chip delay measurement (OCDM) circuit with a wide delay-measurement range, a high delay-measurement resolution and low supply-voltage sensitivity for efficient detection, and diagnosis in the high-performance system-on-chip (SoC). The proposed cascade-stage measurement structure can simultaneously achieve a delay-measurement range of several nanoseconds and a quantization resolution of several picoseconds. The proposed delay-measurement circuit has a high immunity to supply voltage variations without any additional calibration or self-biasing circuit. The delay-measurement range is 5.25 ns with 6 ps resolution; and the average delay resolution variation is 0.41% with ±10% supply voltage variations.

  3. The high voltage system of the RICH and the multiplicity study with LHCb data

    CERN Document Server

    Fanchini, E; Pessina, G; Gys, T

    2011-01-01

    This thesis is about the work done during my PhD at the Univerità degli studi di Milano–Bicocca. During these three years I was involved in the RICH group of the LHCb experiment. LHCb is one of the four main experiments at CERN. It uses proton–proton collisions to study CP violation and to search for new physics beyond the Standard Model in the $b$ decays. One of the main feature of the experiment is the particle identification, performed with the Ring Imaging Cherenkov (RICH) technology. The RICH detects Cherenkov rings via photons emitted by charged particles traversing radiator materials. The photon detection system used consists of pixel Hybrid Photon Detectors (HPDs). They convert photons into photoelectrons which are then accelerated by means of a field generated by three electrodes, biased with high voltages (-18 kV, -17.7 kV and -14.8 kV), onto the silicon pixel anode. The energy released in the pixel is converted into a binary output. My work can be divided in two main parts: the hardware and th...

  4. Experimental study on high-voltage solar array sustained arc discharge induced by high charging

    Institute of Scientific and Technical Information of China (English)

    LI Kai; XIE ErQing; WANG Li; LIU YanXia; YANG Yang; SUN YanZheng; CUI XinYu; MAI ShengLi

    2007-01-01

    It has been reported that sustained arc discharge induced by electrostatic discharge (ESD) could cause permanent damage to high-power and high-voltage solar array of spacecrafts. The paper focuses on ESD simulating experiments on Si and GaAs samples, and induces sustained arc discharge. The physical mechanism of sustained arc discharge is discussed by comparing the charging/discharging phenomena between Si and GaAs samples. The experiments show that sustained arc discharge can produce a permanent short-circuit channel between solar cell strings through which the solar array's photovoltaic power may flow out sustainedly. The analyses show that sustained arc discharge strongly depends on solar array structure, solar array operating voltage, ESD characteristics and cell materials.

  5. Experimental study on high-voltage solar array sustained arc discharge induced by high charging

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    It has been reported that sustained arc discharge induced by electrostatic discharge (ESD) could cause permanent damage to high-power and high-voltage solar array of spacecrafts. The paper focuses on ESD simulating experiments on Si and GaAs samples, and induces sustained arc discharge. The physical mechanism of sustained arc discharge is discussed by comparing the charging/discharging phenomena between Si and GaAs samples. The experiments show that sustained arc discharge can produce a permanent short-circuit channel between solar cell strings through which the solar array’s photovoltaic power may flow out sustainedly. The analyses show that sustained arc discharge strongly depends on solar array structure, solar array operating voltage, ESD characteristics and cell materials.

  6. Efficient Parametric Identification Method for High Voltage Pulse Transformers

    CERN Document Server

    Aguglia, D; Viarouge, P; Cros, J

    2014-01-01

    This paper presents a new identification method for a pulse transformer equivalent circuit. It is based on an analytical approximation of the frequency-domain impedance data derived from a no-load test with open-circuited secondary winding and only requires measurements of primary current and voltage without phase data. Compared with time consuming and complex methods based on off-line non-linear identification procedures, this simple method also gives an estimation of the error on the identified parameters. The method is validated on an existing pulse transformer.

  7. High Voltage Power Converter for Large Wind Turbine

    DEFF Research Database (Denmark)

    Sztykiel, Michal

    performance has been achieved by the transformer-less turbine with a back-to-back modular multilevel converter (MMC) topology, which is single grounded only through its DC link common-mode point. It has also occurred that the results derived from losses and short circuit analyses have become advantageous over...... system operates at 20 kV level - identical as for the collector distribution network. Medium voltage operation allows the converter unit along with the filter to be installed on the base platform inside the tower. In this manner, more space in the nacelle can be flexibly accommodated by the mechanical...

  8. A New High Frequency Injection Method Based on Duty Cycle Shifting without Maximum Voltage Magnitude Loss

    DEFF Research Database (Denmark)

    Wang, Dong; Lu, Kaiyuan; Rasmussen, Peter Omand

    2015-01-01

    The conventional high frequency signal injection method is to superimpose a high frequency voltage signal to the commanded stator voltage before space vector modulation. Therefore, the magnitude of the voltage used for machine torque production is limited. In this paper, a new high frequency...... injection method, in which high frequency signal is generated by shifting the duty cycle between two neighboring switching periods, is proposed. This method allows injecting a high frequency signal at half of the switching frequency without the necessity to sacrifice the machine fundamental voltage...... amplitude. This may be utilized to develop new position estimation algorithm without involving the inductance in the medium to high speed range. As an application example, a developed inductance independent position estimation algorithm using the proposed high frequency injection method is applied to drive...

  9. Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application

    Institute of Scientific and Technical Information of China (English)

    马金荣; 乔明; 张波

    2015-01-01

    A novel substrate trigger semiconductor control rectifier-laterally diffused metal–oxide semiconductor (STSCR-LDMOS) stacked structure is proposed and simulated using the transimission line pulser (TLP) multiple-pulse simulation method in a 0.35-µm, 60-V biploar-CMOS-DMOS (BCD) process without additional masks. On account of a very low holding voltage, it is susceptible to latch-up-like danger for the semiconductor control rectifier-laterally diffused metal–oxide semiconductor (SCR-LDMOS) in high-voltage electro-static discharge (ESD) protection applications. Although the conventional stacking structure has achieved strong latch-up immunity by increasing holding voltage, excessive high trigger voltage does not meet requirements for an ESD protection device. The holding voltage of the proposed stacked structure is proportional to the stacking number, whereas the trigger voltage remains nearly the same. A high holding voltage of 30.6 V and trigger voltage of 75.4 V are achieved.

  10. Nickel-gallium arsenide high-voltage power Schottky diodes

    Science.gov (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  11. High and far: biases in the location of protected areas.

    Directory of Open Access Journals (Sweden)

    Lucas N Joppa

    Full Text Available BACKGROUND: About an eighth of the earth's land surface is in protected areas (hereafter "PAs", most created during the 20(th century. Natural landscapes are critical for species persistence and PAs can play a major role in conservation and in climate policy. Such contributions may be harder than expected to implement if new PAs are constrained to the same kinds of locations that PAs currently occupy. METHODOLOGY/PRINCIPAL FINDINGS: Quantitatively extending the perception that PAs occupy "rock and ice", we show that across 147 nations PA networks are biased towards places that are unlikely to face land conversion pressures even in the absence of protection. We test each country's PA network for bias in elevation, slope, distances to roads and cities, and suitability for agriculture. Further, within each country's set of PAs, we also ask if the level of protection is biased in these ways. We find that the significant majority of national PA networks are biased to higher elevations, steeper slopes and greater distances to roads and cities. Also, within a country, PAs with higher protection status are more biased than are the PAs with lower protection statuses. CONCLUSIONS/SIGNIFICANCE: In sum, PAs are biased towards where they can least prevent land conversion (even if they offer perfect protection. These globally comprehensive results extend findings from nation-level analyses. They imply that siting rules such as the Convention on Biological Diversity's 2010 Target [to protect 10% of all ecoregions] might raise PA impacts if applied at the country level. In light of the potential for global carbon-based payments for avoided deforestation or REDD, these results suggest that attention to threat could improve outcomes from the creation and management of PAs.

  12. On-chip high-voltage generator design design methodology for charge pumps

    CERN Document Server

    Tanzawa, Toru

    2016-01-01

    This book provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.  This new edition includes a variety of useful updates, including coverage of power efficiency and comprehensive optimization methodologies for DC-DC voltage multipliers, modeling of extremely low voltage Dickson charge pumps, and modeling and optimum design of AC-DC switched-capacitor multipliers for energy harvesting and power transfer for RFID.

  13. Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Jing; Qian Qinsong; Sun Weifeng; Liu Siyang, E-mail: zhj_seu@126.co [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China)

    2010-01-15

    The physical mechanisms triggering electrostatic discharge (ESD) in high voltage LDMOS power transistors (> 160 V) under transmission line pulsing (TLP) and very fast transmission line pulsing (VFTLP) stress are investigated by TCAD simulations using a set of macroscopic physical models related to previous studies implemented in Sentaurus Device. Under VFTLP stress, it is observed that the triggering voltage of the high voltage LDMOS obviously increases, which is a unique phenomenon compared with the low voltage ESD protection devices like NMOS and SCR. The relationship between the triggering voltage increase and the parasitic capacitances is also analyzed in detail. A compact equivalent circuit schematic is presented according to the investigated phenomena. An improved structure to alleviate this effect is also proposed and confirmed by the experiments. (semiconductor devices)

  14. High-speed pulse train amplification in semiconductor optical amplifiers with optimized bias current.

    Science.gov (United States)

    Xia, Mingjun; Ghafouri-Shiraz, H; Hou, Lianping; Kelly, Anthony E

    2017-02-01

    In this paper, we have experimentally investigated the optimized bias current of semiconductor optical amplifiers (SOAs) to achieve high-speed input pulse train amplification with high gain and low distortion. Variations of the amplified output pulse duration with the amplifier bias currents have been analyzed and, compared to the input pulse duration, the amplified output pulse duration is broadened. As the SOA bias current decreases from the high level (larger than the saturated bias current) to the low level, the broadened pulse duration of the amplified output pulse initially decreases slowly and then rapidly. Based on the analysis, an optimized bias current of SOA for high-speed pulse train amplification is introduced. The relation between the SOA optimized bias current and the parameters of the input pulse train (pulse duration, power, and repetition rate) are experimentally studied. It is found that the larger the input pulse duration, the lower the input pulse power or a higher repetition rate can lead to a larger SOA optimized bias current, which corresponds to a larger optimized SOA gain. The effects of assist light injection and different amplifier temperatures on the SOA optimized bias current are studied and it is found that assist light injection can effectively increase the SOA optimized bias current while SOA has a lower optimized bias current at the temperature 20°C than that at other temperatures.

  15. Process engineering of high voltage alginate encapsulation of mesenchymal stem cells

    Energy Technology Data Exchange (ETDEWEB)

    Gryshkov, Oleksandr, E-mail: gryshkov@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Pogozhykh, Denys, E-mail: pogozhykh@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Zernetsch, Holger, E-mail: zernetsch@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Hofmann, Nicola, E-mail: hofmann@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Mueller, Thomas, E-mail: mueller.thomas@mh-hannover.de [Institute for Transfusion Medicine, Medical School Hannover, D-30625 Hannover (Germany); Glasmacher, Birgit, E-mail: glasmacher@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany)

    2014-03-01

    Encapsulation of stem cells in alginate beads is promising as a sophisticated drug delivery system in treatment of a wide range of acute and chronic diseases. However, common use of air flow encapsulation of cells in alginate beads fails to produce beads with narrow size distribution, intact spherical structure and controllable sizes that can be scaled up. Here we show that high voltage encapsulation (≥ 15 kV) can be used to reproducibly generate spherical alginate beads (200–400 μm) with narrow size distribution (± 5–7%) in a controlled manner under optimized process parameters. Flow rate of alginate solution ranged from 0.5 to 10 ml/h allowed producing alginate beads with a size of 320 and 350 μm respectively, suggesting that this approach can be scaled up. Moreover, we found that applied voltages (15–25 kV) did not alter the viability and proliferation of encapsulated mesenchymal stem cells post-encapsulation and cryopreservation as compared to air flow. We are the first who employed a comparative analysis of electro-spraying and air flow encapsulation to study the effect of high voltage on alginate encapsulated cells. This report provides background in application of high voltage to encapsulate living cells for further medical purposes. Long-term comparison and work on alginate–cell interaction within these structures will be forthcoming. - Highlights: • High voltage alginate encapsulation of mesenchymal stem cells (MSCs) was designed. • Reproducible and spherical alginate beads were generated via high voltage. • Air flow encapsulation was utilized as a comparative approach to high voltage. • High voltage did not alter the viability and proliferation of encapsulated MSCs. • High voltage encapsulation can be scaled up and applied in cell-based therapy.

  16. Realization of a high voltage generator by series connection of floating modules.

    Science.gov (United States)

    Antonini, P; Benato, A; Borsato, E; Carugno, G; Gobbo, R; Montecassiano, F; Pegoraro, M; Pesavento, G; Zago, M; Zotto, P

    2017-02-01

    A high voltage generator built by a series connection of 100 kV modules was produced. The series connection feasibility is ensured by the inherent floating character of each module which is wireless powered by high efficiency photovoltaic cells illuminated by a laser system. Each module is equipped with a control and monitoring board allowing excellent stabilization of the high voltage output. The performance of the system in terms of reliability, stability, and efficiency was evaluated. In particular using a three module setup, we achieved a maximum voltage of 234 kV with stability better than 0.1%.

  17. Preparation methodology and possible treatments for improved ceramics for high voltage vacuum applications

    CERN Document Server

    Tan, J

    1998-01-01

    The flashover characteristics of an insulator bridged high voltage vacuum gap can play an important role in the overall performance of a high voltage device, for example in the extreme environments of high energy particle accelerators. The detailed preparation of the insulators is, at present, governed by the commercial production methods and by standard bulk cleaning processes, which for a particular application may be far from optimum. The influence of the mechanical preparation, thermal history and particular cleaning technique have been investigated for commercially available alumina samples, with measurement of surface characteristics by scanning electron microscopy and laser diffraction, measurement of the secondary electron emission curve and analysis of the high voltage performance with the possibility of applied fields up to 200kV/cm. The results of the different measurements are discussed in the overall context of the problems encountered in the full sized high voltage devices, and suggestions are m...

  18. A New High Precision Power Detector of Complex Voltage Signals

    Directory of Open Access Journals (Sweden)

    Petrović Predrag B.

    2015-08-01

    Full Text Available A current-mode bipolar power detector based on a novel synthesis of translinear loop squarer/divider is presented. The circuits consist of a single multiple-output current controlled current differencing transconductance amplifier (MO-CCCDTA, two current controlled conveyors (CCCII, and one resistor and one capacitor that are both grounded. The errors related to the signal processing and errors bound were investigated and presented in the paper. The PSpice simulation and experimental results are depicted, and agree well with the theoretical anticipation. The measurement results show that the scheme improves the accuracy of the detector to better than 0.04 % and wide operating frequency range from 50 Hz to 10 MHz. The maximum power consumption of the detector is approximately 5.80 mW, at ±1.2 V supply voltages.

  19. High voltage conditioning of the electrostatic deflector of MARA

    Science.gov (United States)

    Partanen, J.; Johansen, U.; Sarén, J.; Tuunanen, J.; Uusitalo, J.

    2016-06-01

    MARA is a new recoil mass separator in the Accelerator Laboratory of University of Jyväskylä (JYFL-ACCLAB) with a mass resolving power of 250 and an ion-optical configuration of QQQDEDM . In this paper the construction, control and conditioning of its electrostatic deflector are described. The deflector was designed for voltages up to 500 kV accross the gap, corresponding to a 3.6 MV/m field, to accomodate fusion reactions with inverse kinematics. Titanium electrodes with a beam dump opening in the anode are used. The conditioning procedure, which has been used repeatedly to take the deflector to 450 kV, is described, along with the safety systems and precautions that are in place.

  20. Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

    1989-01-01

    . The measuring methods can be used both for development and supervision of electrical insulating systems. For DC measurements a system wherein the voltage is applied (across the Pockels cell) not directly but via an electrooptic circuit was developed. This circuit periodically inverts the polarity of the voltage...... fibre to an electrooptic converter. Second, by use of an electronic circuit the measured signal can be converted into a modulated frequency form for transmission along an optical fibre. These systems are described, measurement results are presented and improvements to be made in the future are outlined...... across the cell, effectively applying a square wave voltage with amplitude equal to the DC voltage to be measured. The switching circuit is based around two high voltage transistors TA, TB, with the Pockels cell electrodes being each connected to one of the transistor collectors. The transistor...

  1. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    Energy Technology Data Exchange (ETDEWEB)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  2. Insulation co-ordination in high-voltage electric power systems

    CERN Document Server

    Diesendorf, W

    2015-01-01

    Insulation Co-ordination in High-Voltage Electric Power Systems deals with the methods of insulation needed in different circumstances. The book covers topics such as overvoltages and lightning surges; disruptive discharge and withstand voltages; self-restoring and non-self-restoring insulation; lightning overvoltages on transmission lines; and the attenuation and distortion of lightning surges. Also covered in the book are topics such as the switching surge designs of transmission lines, as well as the insulation coordination of high-voltage stations. The text is recommended for electrical en

  3. A high-speed CMOS current op amp for very low supply voltage operation

    DEFF Research Database (Denmark)

    Bruun, Erik

    1994-01-01

    A CMOS implementation of a high-gain current mode operational amplifier (op amp) with a single-ended input and a differential output is described. This configuration is the current mode counterpart of the traditional voltage mode op amp. In order to exploit the inherent potential for high speed......, low voltage operation normally associated with current mode analog signal processing, the op amp has been designed to operate off a supply voltage of 1.5 V, and the signal path has been confined to N-channel transistors. With this design, a gain of 94 dB and a gain-bandwidth product of 65 MHz has been...

  4. Development of high voltage dc transmission at Siemens Schuckertwerke up to 1945

    Energy Technology Data Exchange (ETDEWEB)

    Bosch, M.; Schiele, O.

    1966-09-01

    High voltage dc affords advantages over three phase ac in the transmission of power over long distances and over cables, and in the coupling of three phase systems. Mercury arc rectifiers and equipment for dc voltages from 100 to 200 kV were developed and put into service in the period between 1937 and 1945. A few years ago a high voltage dc transmission group was formed by AEG, BBC and Siemens to continue the work interrupted at the end of the war.

  5. High Voltage Bidirectional Flyback Converter Driving DEAP Actuator for Automotive Applications

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.;

    2013-01-01

    DEAP (Dielectric Electro Active Polymer) is a new type of smart material. The actuator based on DEAP material tends to be applied in a variety of occasions. It will have prosperous future when employed in automotive field. This paper is focused on the design and implementation of a low input volt...... voltage and high output voltage bidirectional converter for driving the DEAP actuator. The detailed design and implemented parameters have been summarized, especially for the high voltage transformer. The experiments have been performed to validate the design and implementation....

  6. Study of Energy Losses in High-Voltage Induction Motor Electric Drive

    Directory of Open Access Journals (Sweden)

    Svilen Rachev

    2016-10-01

    Full Text Available The dynamic behavior during operation of the high-voltage induction motor electric drive has been studied by means of mathematical model developed. The purpose is to draw out more clearly picture of operation of high-voltage induction motor drives. The system of differential equations has been transformed and solved using suitable software. As a result the values of the energy losses components in the induction motor have been obtained according to different values of supply voltage and factor of inertia. Some of the study results have been presented graphically. An analysis has been made and conclusions from the results obtained have been done.

  7. Project resumes: biological effects from electric fields associated with high-voltage transmission lines

    Energy Technology Data Exchange (ETDEWEB)

    None

    1980-01-01

    Abstracts of research projects are presented in the following areas: measurements and special facilities; cellular and subcellular studies; physiology; behavior; environmental effects; modeling, scaling and dosimetry; and high voltage direct current. (ACR)

  8. A prototype of a high-voltage platform for the KRION ion source

    Science.gov (United States)

    Alexandrov, V. S.; Donets, E. E.; Konnov, G. I.; Kosukhin, V. V.; Sidorova, V. O.; Sidorov, A. I.; Shvetsov, V. S.; Trubnikov, G. V.

    2014-09-01

    A high-voltage platform that has been developed for the KRION ion source is described. The platform design concept is explained. The calculations that have been performed of the influence of the design and materials on the source magnetic field make it possible to define a range of materials suitable for manufacturing the platform. The major components of the high-voltage platform, such as a high-voltage power supplier, and decoupling insulators of the high-voltage power source, and the main and supplementary platforms, are chosen and described. It is determined that, to exclude electric breakdowns and corona discharges, one should use an electrically shielded channel with a cryocooler and power supplies for the KRION-source coupling cables.

  9. HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.ELECTRON BEAM TECHNOLOGY - INNOVATIVE TECHNOLOGY EVALUATION REPORT

    Science.gov (United States)

    This report evaluates a high-voltage electron beam (E-beam) technology's ability to destroy volatile organic compounds (VOCs) and other contaminants present in liquid wastes. Specifically, this report discusses performance and economic data from a Superfund Innovative Technology...

  10. Circuits protection against interferences in high voltage substations; Protecao de circuitos contra interferencias em subestacoes

    Energy Technology Data Exchange (ETDEWEB)

    Hamada, Massayuki [Consultas e Aplicacoes de Engenharia Eletrica Ltda. (CAEEL) (Brazil)

    1989-12-01

    This paper makes a brief analysis of the different phenomena which may cause electromagnetic interference in high voltage substations and suggests adequate solutions to the problem according to the different events that may occur. 5 refs., 1 fig.

  11. Lithium-Ion Electrolytes with Improved Safety Tolerance to High Voltage Systems

    Science.gov (United States)

    Smart, Marshall C. (Inventor); Bugga, Ratnakumar V. (Inventor); Prakash, Surya G. (Inventor); Krause, Frederick C. (Inventor)

    2015-01-01

    The invention discloses various embodiments of electrolytes for use in lithium-ion batteries, the electrolytes having improved safety and the ability to operate with high capacity anodes and high voltage cathodes. In one embodiment there is provided an electrolyte for use in a lithium-ion battery comprising an anode and a high voltage cathode. The electrolyte has a mixture of a cyclic carbonate of ethylene carbonate (EC) or mono-fluoroethylene carbonate (FEC) co-solvent, ethyl methyl carbonate (EMC), a flame retardant additive, a lithium salt, and an electrolyte additive that improves compatibility and performance of the lithium-ion battery with a high voltage cathode. The lithium-ion battery is charged to a voltage in a range of from about 2.0 V (Volts) to about 5.0 V (Volts).

  12. FEA identification of high order generalized equivalent circuits for MF high voltage transformers

    CERN Document Server

    Candolfi, Sylvain; Cros, Jérôme; Aguglia, Davide

    2015-01-01

    This paper presents a specific methodology to derive high order generalized equivalent circuits from electromagnetic finite element analysis for high voltage medium frequency and pulse transformers by splitting the main windings in an arbitrary number of elementary windings. With this modeling approach, the dynamic model of the transformer over a large bandwidth is improved and the order of the generalized equivalent circuit can be adapted to a specified bandwidth. This efficient tool can be used by the designer to quantify the influence of the local structure of transformers on their dynamic behavior. The influence of different topologies and winding configurations is investigated. Several application examples and an experimental validation are also presented.

  13. Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India)], E-mail: ospanwar@mail.nplindia.ernet.in; Khan, Mohd. Alim [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Kumar, Mahesh; Shivaprasad, S.M. [Surface Physics and Nanostructures Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Satyanarayana, B.S. [MIT Innovation Centre and Electronics and Communication Department, Manipal Institute of Technology, Manipal-579104 (India); Dixit, P.N. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Bhattacharyya, R. [Emeritus Scientist, National Physical Laboratory, New Delhi-110012 (India); Khan, M.Y. [Department of Physics, Jamia Millia Islamia, Central University, New Delhi-110025 (India)

    2008-02-29

    The application of a sufficiently high negative substrate bias, during the growth of tetrahedral amorphous carbon (ta-C), is usually associated with low sp{sup 3} bonding configuration and stressed films. However, in an effort to understand and utilize the higher pseudo thermo dynamical conditions during the film growth, at high negative substrate bias (- 300 V), reported here is a study on ta-C films grown under different hydrogen and nitrogen concentration. As grown ta-C films were studied under different negative substrate bias conditions. The variation of the sp{sup 3} content and sp{sup 3}/sp{sup 2} ratio in the ta-C films exhibits a trend similar to those reported in literature, with a subtle variation in this report being the substrate bias voltage, which was observed to be around - 200 V, for obtaining the highest sp{sup 3} (80%) bonding and sp{sup 3}/sp{sup 2} (3.95) ratio. The hydrogen and nitrogen incorporated ta-C films studied, at a bias of - 300 V, show an increase in sp{sup 3} (87-91%) bonding and sp{sup 3}/sp{sup 2} (7-10) ratio in the range of studies reported. The inference is drawn on the basis of the set of data obtained from measurements carried out using X-ray photoelectron spectroscopy, X-ray induced Auger electron spectroscopy and Raman spectroscopy of as grown and hydrogen and nitrogen incorporated ta-C films deposited using an S bend filtered cathodic vacuum arc system. The study indicates the possibility of further tailoring ta-C film properties and also extending capabilities of the cathodic arc system for developing carbon based films for electronics and tribological applications.

  14. Very Low Power, Low Voltage, High Accuracy, and High Performance Current Mirror

    Institute of Scientific and Technical Information of China (English)

    Hassan Faraji Baghtash; Khalil Monfaredi; Ahmad Ayatollahi

    2011-01-01

    A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed.In this circuit,the gain boosting regulated cascode scheme is used to improve the output resistance,while using inverter as an amplifier.The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given,which verify the high performance of the proposed structure.Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ.The current copy error is favorable as low as 0.002% together with an input (the minimum input voltage of vin,min~ 0.24 V) and an output (the minimum output voltage of vout,min~ 0.16 V) compliances while working with the 1 V power supply and the 50 μA input current.The current copy error is near zero at the input current of 27 μA.It consumes only 76 μW and introduces a very low output offset current of 50 pA.

  15. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  16. Analysis of predictor factors of limb amputation in patients with high-voltage electrical burns

    OpenAIRE

    2015-01-01

    Background: Limb amputation is considered one of the most devastating consequences of electrical injury. Any factors that correlate with the degree of muscle damage can be used to predict the necessity of limb amputation. The aim of this study was to determine the factors that can be used to predict limb amputation in high-voltage electrically injured patients. Methods: Eighty-two high-voltage electrically injured patients were admitted to the Department of Plastic and Reconstructive Surg...

  17. Review of the Dynamics of Coalescence and Demulsification by High-Voltage Pulsed Electric Fields

    OpenAIRE

    Ye Peng; Tao Liu; Haifeng Gong; Xianming Zhang

    2016-01-01

    The coalescence of droplets in oil can be implemented rapidly by high-voltage pulse electric field, which is an effective demulsification dehydration technological method. At present, it is widely believed that the main reason of pulse electric field promoting droplets coalescence is the dipole coalescence and oscillation coalescence in pulse electric field, and the optimal coalescence pulse electric field parameters exist. Around the above content, the dynamics of high-voltage pulse electric...

  18. Study of the interaction between space plasma and high voltage solar array

    OpenAIRE

    Iwasa, Minoru; TANAKA, KOJI; Sasaki, Susumu; ODAWARA, OSAMU; 岩佐 稔; 田中 孝治; 佐々木 進; 小田原 修

    2006-01-01

    We are studying the problems associated with high voltage power systems in space. Especially we are interested in the potential distribution of the solar array that is resistant to the electrical discharge. We have carried out experiment on the interaction between the space plasma and the high voltage solar array. An array of electrodes distributed on a dielectric material was used to simulate the inter-connectors of the solar array panel in space environment. One of major concerns in the usa...

  19. Study of the plasma interference with high voltage electrode array for space power application

    OpenAIRE

    Iwasa, Minoru; TANAKA, KOJI; Sasaki, Susumu; ODAWARA, OSAMU; 岩佐 稔; 田中 孝治; 佐々木 進; 小田原 修

    2005-01-01

    We are studying the problems associated with high voltage power systems in space. Especially we are interested in the potential distribution of the solar array that is resistant to the electrical discharge. We have carried out experiments on the interaction between the high voltage solar array and the ambient plasma. In the experiment, an array of electrodes distributed on the insulation panel was used to simulate the inter-connectors of the solar array. An electrode array without the insulat...

  20. Finite Element Based Optimal Design Approach for High Voltage Pulse Transformers

    CERN Document Server

    Aguglia, D; Viarouge, P; Cros, J

    2014-01-01

    This paper presents an optimal design methodology of monolithic high voltage pulse transformers based on the direct 2D FEA identification of the electrical equivalent circuit parameters. This method is applied to the preliminary optimal design of the monolithic high voltage pulse transformer for the future CLIC modulators under study at CERN. The feasibility of such a transformer with tight specifications is demonstrated. The predicted performances obtained with the direct 2D FEA optimization process is validated by 3D FEA simulation.

  1. Static Electricity as Part of Electromagnetic Environment on High-Voltage Electrical Substation

    Directory of Open Access Journals (Sweden)

    M. Fursanov

    2012-01-01

    Full Text Available Causes of occurrences electrostatic discharges (ESD on high-voltage electric substation were investigated and dependences values ESD’s on parameters interaction structures, humidity of air were found. Experimental research values ESD’s on high-voltage electric substation and in man-made conditions was fulfilled. Uncertainty measurement’s was taken into consideration by research results analyze. Matching with research of other authors was made. Danger ESD’s for electric devises was established.

  2. Recursive bias estimation for high dimensional regression smoothers

    Energy Technology Data Exchange (ETDEWEB)

    Hengartner, Nicolas W [Los Alamos National Laboratory; Cornillon, Pierre - Andre [AGROSUP, FRANCE; Matzner - Lober, Eric [UNIV OF RENNES, FRANCE

    2009-01-01

    In multivariate nonparametric analysis, sparseness of the covariates also called curse of dimensionality, forces one to use large smoothing parameters. This leads to biased smoother. Instead of focusing on optimally selecting the smoothing parameter, we fix it to some reasonably large value to ensure an over-smoothing of the data. The resulting smoother has a small variance but a substantial bias. In this paper, we propose to iteratively correct of the bias initial estimator by an estimate of the latter obtained by smoothing the residuals. We examine in details the convergence of the iterated procedure for classical smoothers and relate our procedure to L{sub 2}-Boosting, For multivariate thin plate spline smoother, we proved that our procedure adapts to the correct and unknown order of smoothness for estimating an unknown function m belonging to H({nu}) (Sobolev space where m should be bigger than d/2). We apply our method to simulated and real data and show that our method compares favorably with existing procedures.

  3. Evaluation of Epoxy Nanocomposites for High Voltage Insulation

    Science.gov (United States)

    Iyer, Ganpathy

    Polymeric materials containing nanometer (nm) size particles are being introduced to provide compact shapes for low and medium voltage insulation equipment. The nanocomposites may provide superior electrical performance when compared with those available currently, such as lower dielectric losses and increased dielectric strength, tracking and erosion resistance, and surface hydrophobicity. All of the above mentioned benefits can be achieved at a lower filler concentration (resistance tests were conducted over 500 hours to monitor degradation in the samples due to corona. These tests revealed improvements in partial discharge endurance of nanocomposite samples. These improvements could not be adequately explained using a macroscopic quantity such as thermal conductivity. Thermo gravimetric analysis (TGA) showed higher weight loss initiation temperatures for nanofilled samples which is in agreement with the corona resistance experimental results. Theoretical models have also been developed in this work to complement the results of the corona resistance experiment and the TGA analysis. Degradation model was developed to map the erosion path using Dijkstra's shortest path algorithm. A thermal model was developed to calculate the localized temperature distribution in the micro and nano-filled samples using the PDE toolbox in MATLAB. Both the models highlight the fact that improvement in nanocomposites is not limited to the filler concentrations that were tested experimentally.

  4. Self-Healable Electrical Insulation for High Voltage Applications

    Science.gov (United States)

    Williams, Tiffany S.

    2017-01-01

    Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

  5. 30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage resistance grounded systems. 75.803 Section 75.803 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance...

  6. Environmental and biotechnological applications of high-voltage pulsed discharges in water

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Masayuki [Department of Chemical and Environmental Engineering, Gunma University 1-5-1 Tenjin, Kiryu, Gunma 376-8515 (Japan)], E-mail: mxsato@cee.gunma-u.ac.jp

    2008-05-01

    A high-voltage pulse has wide application in fields such as chemistry, physics and biology and their combinations. The high-voltage pulse forms two kinds of physical processes in water, namely (a) a pulsed electric field (PEF) in the parallel electrode configuration and (b) plasma generation by a pulsed discharge in the water phase with a concentrated electric field. The PEF can be used for inactivation of bacteria in liquid foods as a non-thermal process, and the underwater plasma is applicable not only for the decomposition of organic materials in water but also for biological treatment of wastewater. These discharge states are controlled mainly by the applied pulse voltage and the electrode shape. Some examples of environmental and biotechnological applications of a high-voltage pulse are reviewed.

  7. High voltage transmission lines studies with the use of artificial intelligence

    Energy Technology Data Exchange (ETDEWEB)

    Ekonomou, L. [A.S.PE.T.E. - School of Pedagogical and Technological Education, Department of Electrical Engineering Educators, N. Heraklion, 141 21 Athens (Greece)

    2009-12-15

    The paper presents an alternative approach for the studies of high voltage transmission lines based on artificial intelligence and more specifically artificial neural networks (ANNs). In contrast to the existing conventional-analytical techniques and simulations which are using in the calculations empirical and/or approximating equations, this approach is based only on actual field data and actual measurements. The proposed approach is applied on high voltage transmission lines in order to calculate the lightning outages, on grounding systems in order to assess the grounding resistance and on high voltage transmission lines' polluted insulators in order to estimate the critical flashover voltage. The obtained results are very close to the actual ones for all three case studies, something which clearly implies that the ANN approach is well working and has an acceptable accuracy, constituting an additional tool of electric engineers. (author)

  8. The Thawing Characteristic of Frozen Tofu under High-Voltage Alternating Electric Field

    Directory of Open Access Journals (Sweden)

    Shilong Deng

    2017-01-01

    Full Text Available To systematically and comprehensively investigate the high voltage alternating electric field (HVAEF thawing processing, we investigated the high-voltage electric field thawing characteristic of the frozen tofu at different voltages for alternating current (AC. The thawing time, thawing loss of frozen tofu, and specific energy consumption (SEC of HVEF system were measured. Seven different mathematical models were then compared to simulate thawing time curves based on root mean square error, reduced mean square of deviation, and modeling efficiency. The results showed that the thawing rate of frozen tofu was notably greater in the high-voltage electric field system when compared to control. Both Linear and Quadratic models were the best mathematical models. Therefore, this work presents a facile and effective strategy for experimentally and theoretically determining the HVAEF thawing properties of frozen tofu.

  9. Design and Development of Autonomous High Voltage Driving System for DEAP Actuator in Radiator Thermostat

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    make a high voltage capacitive load driving system to be necessary. The only energy source battery determines it needs to be an autonomous system. The detailed system specifications have been introduced and the corresponding system level design has been proposed. In addition, the detailed design......In radiator thermostat applications, DEAP (Dielectric Electro Active Polymer) actuator tends to be a good candidate to replace the conventional self-actuating or step motor based actuator due to its intrinsic advantages. The capacitive property and high voltage (HV) driving demand of DEAP actuator...... and implementation information has been provided as well, including the power and control stage inside the high voltage converter, the output voltage measurement circuit, the feedback control, etc. Finally, the experimental results have been provided to validate the capability and performance of the driving system....

  10. The Series Connected Buck Boost Regulator Concept for High Efficiency Light Weight DC Voltage Regulation

    Science.gov (United States)

    Birchenough, Arthur G.

    2003-01-01

    Improvements in the efficiency and size of DC-DC converters have resulted from advances in components, primarily semiconductors, and improved topologies. One topology, which has shown very high potential in limited applications, is the Series Connected Boost Unit (SCBU), wherein a small DC-DC converter output is connected in series with the input bus to provide an output voltage equal to or greater than the input voltage. Since the DC-DC converter switches only a fraction of the power throughput, the overall system efficiency is very high. But this technique is limited to applications where the output is always greater than the input. The Series Connected Buck Boost Regulator (SCBBR) concept extends partial power processing technique used in the SCBU to operation when the desired output voltage is higher or lower than the input voltage, and the implementation described can even operate as a conventional buck converter to operate at very low output to input voltage ratios. This paper describes the operation and performance of an SCBBR configured as a bus voltage regulator providing 50 percent voltage regulation range, bus switching, and overload limiting, operating above 98 percent efficiency. The technique does not provide input-output isolation.

  11. Analysis of cutting-edge techniques in the high voltage and high power adjustable speed drive systems

    Institute of Scientific and Technical Information of China (English)

    ZHAO ZhengMing; BAI Hua; YUAN LiQiang

    2009-01-01

    The high voltage and high power adjustable speed drive (ASD) system is one of the most attractive fields in power electronics, and it is also a very crucial technique for energy saving and emission re-duction. This paper discussed and analyzed the main cutting-edge knowledge and issues in the proc-ess of exploiting the high voltage and high power ASD system.

  12. High-voltage thin-absorber photovoltaic device structures for efficient energy harvesting

    Science.gov (United States)

    Welser, Roger E.; Pethuraja, Gopal G.; Zeller, John W.; Sood, Ashok K.; Sablon, Kimberly A.; Dhar, Nibir K.

    2014-06-01

    Efficient photovoltaic energy harvesting requires device structures capable of absorbing a wide spectrum of incident radiation and extracting the photogenerated carriers at high voltages. In this paper, we review the impact of active layer thickness on the voltage performance of GaAs-based photovoltaic device structures. We observe that thin absorber structures can be leveraged to increase the operating voltage of energy harvesting devices. Thin absorbers in combination with advanced light trapping structures provide an exciting pathway for enhancing the performance of flexible, lightweight photovoltaic modules suitable for mobile and portable power applications.

  13. High-voltage boost quasi-Z-source isolated DC/DC converter

    DEFF Research Database (Denmark)

    Siwakoti, Yam P.; Blaabjerg, Frede; Loh, Poh Chiang

    2014-01-01

    A high-voltage gain two-switch quasi-Z-source isolated DC/DC converter has been presented in this study. It consists of a quasi-Z-source network at its input, a push-pull square-wave inverter at its middle, and a voltage-doubler rectifier at its output. When coordinated appropriately, the new...... converter uses less switches, a smaller common duty cycle and less turns for the transformer when compared with existing topologies. Its size and weight are therefore smaller, whereas its efficiency is higher. It is therefore well-suited for applications, where a wide range of voltage gain is required like...

  14. Modulation Voltage of High T c DC Superconducting Quantum Interference Device with Damping Resistance

    Science.gov (United States)

    Enpuku, Keiji; Doi, Hideki; Tokita, Go; Maruo, Taku

    1994-05-01

    The effect of damping resistance on the voltage versus flux (V -Φ) relation of the high T c dc superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge junction and damping resistance in parallel with SQUID inductance is fabricated. Measured values of modulation voltage in the V -Φ relation are compared with those of the conventional SQUID without damping resistance. It is shown that modulation voltage is much improved by using damping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.

  15. Voltage magnitude and margin controller for remote industrial microgrid with high wind penetration

    DEFF Research Database (Denmark)

    Cai, Yu; Lin, Jin; Song, Yonghua

    2013-01-01

    It is well known that the remote industrial microgrid is located at the periphery of the grid, which is weakly connected to the main grid. In order to enhance the voltage stability and ensure a good power quality for industries, a voltage magnitude and margin controller based on wind turbines...... is proposed in this paper. This controller includes two parts to improve voltage stability in different time scales by using local measurements. Case studies conducted for a remote microgrid with high wind penetration have proved the effectiveness of the proposed control scheme....

  16. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  17. Analysis of a modular generator for high-voltage, high-frequency pulsed applications, using low voltage semiconductors (series connected step-up (1:10) transformers

    Science.gov (United States)

    Redondo, L. M.; Fernando Silva, J.; Margato, E.

    2007-03-01

    This article discusses the operation of a modular generator topology, which has been developed for high-frequency (kHz), high-voltage (kV) pulsed applications. The proposed generator uses individual modules, each one consisting of a pulse circuit based on a modified forward converter, which takes advantage of the required low duty cycle to operate with a low voltage clamp reset circuit for the step-up transformer. This reduces the maximum voltage on the semiconductor devices of both primary and secondary transformer sides. The secondary winding of each step-up transformer is series connected, delivering a fraction of the total voltage. Each individual pulsed module is supplied via an isolation transformer. The assembled modular laboratorial prototype, with three 5kV modules, 800V semiconductor switches, and 1:10 step-up transformers, has 80% efficiency, and is capable of delivering, into resistive loads, -15kV/1A pulses with 5μs width, 10kHz repetition rate, with less than 1μs pulse rise time. Experimental results for resistive loads are presented and discussed.

  18. Analysis of a modular generator for high-voltage, high-frequency pulsed applications, using low voltage semiconductors (series connected step-up (1:10) transformers.

    Science.gov (United States)

    Redondo, L M; Fernando Silva, J; Margato, E

    2007-03-01

    This article discusses the operation of a modular generator topology, which has been developed for high-frequency (kHz), high-voltage (kV) pulsed applications. The proposed generator uses individual modules, each one consisting of a pulse circuit based on a modified forward converter, which takes advantage of the required low duty cycle to operate with a low voltage clamp reset circuit for the step-up transformer. This reduces the maximum voltage on the semiconductor devices of both primary and secondary transformer sides. The secondary winding of each step-up transformer is series connected, delivering a fraction of the total voltage. Each individual pulsed module is supplied via an isolation transformer. The assembled modular laboratorial prototype, with three 5 kV modules, 800 V semiconductor switches, and 1:10 step-up transformers, has 80% efficiency, and is capable of delivering, into resistive loads, -15 kV1 A pulses with 5 micros width, 10 kHz repetition rate, with less than 1 micros pulse rise time. Experimental results for resistive loads are presented and discussed.

  19. High-voltage integrated transmitting circuit with differential driving for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz

    2016-01-01

    In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... pulses at differential voltage levels of 60, 80 and 100 V, a frequency up to 5 MHz and a measured driving strength of 2.03 V/ns with the CMUT electrical model connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption at the ultrasound scanner operation...

  20. Extra-High-Voltage DC-DC Boost Converters Topology with Simple Control Strategy

    Directory of Open Access Journals (Sweden)

    K. Rajambal

    2009-01-01

    Full Text Available This paper presents the topology of operating DC-DC buck converter in boost mode for extra-high-voltage applications. Traditional DC-DC boost converters are used in high-voltage applications, but they are not economical due to the limited output voltage, efficiency and they require two sensors with complex control algorithm. Moreover, due to the effect of parasitic elements the output voltage and power transfer efficiency of DC-DC converters are limited. These limitations are overcome by using the voltage lift technique, opens a good way to improve the performance characteristics of DC-DC converter. The technique is applied to DC-DC converter and a simplified control algorithm in this paper. The performance of the controller is studied for both line and load disturbances. These converters perform positive DC-DC voltage increasing conversion with high power density, high efficiency, low cost in simple structure, small ripples, and wide range of control. Simulation results along theoretical analysis are provided to verify its performance.

  1. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    Science.gov (United States)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  2. Dynamics of conductive and nonconductive particles under high-voltage electrostatic coupling fields

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    With the high-voltage electrostatic theory and numerical analysis, the dynamics of conductive and nonconductive particles under high-voltage electrostatic coupling fields was studied. The oscillation behavior of the conductive particle between the corona electrode and ground electrode was analyzed and its oscillation amplitude was Sm=(ta+ts)·νm/2. It was found that there was the "lift-off voltage (Ulo)" for the conductive particle between the electrostatic electrode and ground electrode. The concepts of "critical charged rotational speed (n?)", "detaching critical rotational speed of nonconductive particle (n′)" and "ratio of voltage and distance between surface of electrodes (U/D)" were presented and their criteria were established. The trajectories of the conductive particles under the coupling fields of the corona electrode, electrostatic electrode and ground electrode were simulated by the computer. The simulative results were in good agreement with the experimental ones. This research enriches the high-voltage electrostatic theory and provides a theoretic basis for optimization of operating parameters and structure design of high-voltage electrostatic separator.

  3. Effects of vinylene carbonate on high temperature storage of high voltage Li-ion batteries

    Science.gov (United States)

    Eom, Ji-Yong; Jung, In-Ho; Lee, Jong-Hoon

    The effects of vinylene carbonate (VC) on high temperature storage of high voltage Li-ion batteries are investigated. 1.3 M of LiPF 6 dissolved in ethylene carbonate (EC), ethylmethyl carbonate (EMC) and dimethyl carbonate (DMC) of 3:3:4 volume ratio is used as original electrolyte for 18650 cylindrical cells with LiCoO 2 cathode and graphite anode. VC is then added to electrolyte. At the initial stage of the high temperature storage, higher open-circuit voltage (OCV) is maintained when increasing the VC concentration. As the storage time increases, OCV of higher VC concentration drops gradually, and then the gas evolution takes place abruptly. Gas analysis shows methane (CH 4) decreases with increase of the VC concentration due to formation of stable solid electrolyte interface (SEI) layer on the graphite. Since the residual VC after formation of the SEI layer decomposes on the cathode surface, carbon dioxide (CO 2) dramatically increases on the cathode with the VC concentration, leaving poly(VC) film at the anode surface, as suggested by XPS test results.

  4. Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

    Science.gov (United States)

    Palmour, J. W.; Levinshtein, M. E.; Ivanov, P. A.; Zhang, Q. J.

    2015-06-01

    Isothermal forward current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j  ≈  4200 A cm-2 in the temperature range 297-460 K. Quasi-isothermal current-voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j  ≈  7200 A cm-2 and ambient temperatures of 297 and 460 K. The isothermal forward current-voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.

  5. A new ROIC with high-voltage protection circuit of HgCdTe e-APD FPA for passive and active imaging

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2012-12-01

    HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode can be used for high speed applications such as active imaging. A readout integrated circuit of e-APD FPA is designed for dual mode passive/active imaging system. Unit cell circuit architecture of ROIC includes a high voltage protection module, a Sample-Hold circuit module, a comparator, output driver stage and a integrator module which includes a amplifier and three capacitors. Generally, APD FPA works at reversed bias such as 5V-15V in active imaging mode, and pixels' dark currents increase exponentially as the reverse-bias voltage is increased. Some cells of ROIC may be short to high voltage because of avalanche breakdown of diodes. If there is no protection circuit, the whole ROIC would be burnt out. Thus a protection circuit module introduced in every ROIC cell circuit is necessary to make sure the rest units of ROIC can still work. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area other than LDMOS in high voltage BCD process in the limited 100μm×100μm pitch area. In integrator module, three integration capacitors are included in the ROIC to provide switchable well capacity. One of them can be shared in two modes in order to save area. Constraints such as pixel area and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier which can avoid potential instability caused by inaccuracy of MOSFET Model at 77K.

  6. High Voltage Surface Degradation on Carbon Blacks in Lithium Ion Batteries

    DEFF Research Database (Denmark)

    Younesi, Reza

    including carbon black (CB) additives have a potential risk of degradation. Though the weight percentage of CB in commercial batteries is generally very small, the volumetric amount and thus the surface area of CB compose a rather large part of a cathode due to its small particle size (≈ 50 nm) and high......In order to increase the power density of Li-ion batteries, much research is focused on developing cathode materials that can operate at high voltages above 4.5 V with a high capacity, high cycling stability, and rate capability. However, at high voltages all the components of positive electrodes...

  7. High Voltage Surface Degradation on Carbon Blacks in Lithium Ion Batteries

    DEFF Research Database (Denmark)

    Younesi, Reza

    In order to increase the power density of Li-ion batteries, much research is focused on developing cathode materials that can operate at high voltages above 4.5 V with a high capacity, high cycling stability, and rate capability. However, at high voltages all the components of positive electrodes...... including carbon black (CB) additives have a potential risk of degradation. Though the weight percentage of CB in commercial batteries is generally very small, the volumetric amount and thus the surface area of CB compose a rather large part of a cathode due to its small particle size (≈ 50 nm) and high...

  8. Fast response double series resonant high-voltage DC-DC converter

    Science.gov (United States)

    Lee, S. S.; Iqbal, S.; Kamarol, M.

    2012-10-01

    In this paper, a novel double series resonant high-voltage dc-dc converter with dual-mode pulse frequency modulation (PFM) control scheme is proposed. The proposed topology consists of two series resonant tanks and hence two resonant currents flow in each switching period. Moreover, it consists of two high-voltage transformer with the leakage inductances are absorbed as resonant inductor in the series resonant tanks. The secondary output of both transformers are rectified and mixed before supplying to load. In the resonant mode operation, the series resonant tanks are energized alternately by controlling two Insulated Gate Bipolar Transistor (IGBT) switches with pulse frequency modulation (PFM). This topology operates in discontinuous conduction mode (DCM) with all IGBT switches operating in zero current switching (ZCS) condition and hence no switching loss occurs. To achieve fast rise in output voltage, a dual-mode PFM control during start-up of the converter is proposed. In this operation, the inverter is started at a high switching frequency and as the output voltage reaches 90% of the target value, the switching frequency is reduced to a value which corresponds to the target output voltage. This can effectively reduce the rise time of the output voltage and prevent overshoot. Experimental results collected from a 100-W laboratory prototype are presented to verify the effectiveness of the proposed system.

  9. High Voltage Testing of a 5-meter Prototype Triaxial HTS Cable

    Energy Technology Data Exchange (ETDEWEB)

    Sauers, Isidor [ORNL; James, David Randy [ORNL; Ellis, Alvin R [ORNL; Tuncer, Enis [ORNL; Pace, Marshall O [ORNL; Gouge, Michael J [ORNL; Demko, Jonathan A [ORNL; Lindsay, David T [ORNL

    2007-01-01

    High voltage tests were performed on a 5-m long prototype triaxial HTS cable (supplied by Ultera) at ORNL in preparation for installation of a 200-m HTS cable of the same design at the AEP utility substation in Columbus, Ohio. The triaxial design comprises three concentric phases and shield around a common former with the phase to phase dielectric at cryogenic temperature. Advantages of this design include increased current density, a reduced amount of HTS tape needed, and reduced heat load. The phase to phase voltage will be 13.2 kVrms (7.6 kVrms to ground). Preliminary testing was done on half-scale and full-scale terminations which successfully passed AC withstand, partial discharge, and impulse tests. High voltage tests conducted on the 5-m cable with the cable straight and after bending 90 degrees were ac withstand to 39 kVrms, partial discharge inception, and a minimum of 10 positive and 10 negative lightning waveform impulses at 110 kV. Phase to phase insulation was tested by applying high voltage to each phase one at a time with all the other phases grounded. Partial discharge data will be presented. The 5-m prototype triaxial HTS cable passed all the HV tests performed, with a PD inception voltage significantly above the required voltage.

  10. Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

    Institute of Scientific and Technical Information of China (English)

    Pu Yan; Pang Lei; Chen Xiao-Juan; Yuan Ting-Ting; Luo Wei-Jun; Liu Xin-Yu

    2011-01-01

    The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN highelectron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects,which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects,and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements,the trapping effects and self-heating effects can be separated.The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement,the steady state of the bias points must be considered carefully to avoid the dispersion effects.

  11. High-speed, high-voltage pulse generation using avalanche transistor

    Science.gov (United States)

    Yong-sheng, Gou; Bai-yu, Liu; Yong-lin, Bai; Jun-jun, Qin; Xiao-hong, Bai; Bo, Wang; Bing-li, Zhu; Chuan-dong, Sun

    2016-05-01

    In this work, the conduction mechanism of avalanche transistors was demonstrated and the operation condition for generating high-speed pulse using avalanche transistors was illustrated. Based on the above analysis, a high-speed and high-voltage pulse (HHP) generating circuit using avalanche transistors was designed, and its working principle and process were studied. To improve the speed of the output pulse, an approach of reducing the rise time of the leading edge is proposed. Methods for selecting avalanche transistor and reducing the parasitic inductance and capacitance of printed circuit board (PCB) were demonstrated. With these instructions, a PCB with a tapered transmission line was carefully designed and manufactured. Output pulse with amplitude of 2 kV and rise time of about 200 ps was realized with this PCB mounted with avalanche transistors FMMT417, indicating the effectiveness of the HHP generating circuit design.

  12. Characterization of high voltage components using partial discharges; Caracterisation de composants haute tension par decharges partielles

    Energy Technology Data Exchange (ETDEWEB)

    Boucheteau, R.; Biero, H.; Prisset, C. [CEA Le Ripault, 37 - Tours (France)

    1996-12-31

    Because of the increasing size reduction of high voltage components, the classical dielectric control means do not allow to predict neither the in-service breakdown probability, nor the service life of the components even when submitted to a voltage greater to the nominal value of use. Therefore a new approach is developed which is based on the measurement of partial discharges (PD) occurring with respect to the voltage applied. PDs are due to impurities inside the materials. Pertinent parameters, such as the PDs occurrence voltage, the mean discharge current and the maximum charge of PDs are defined in order to determine a correlation between the PDs measurement and the state of the insulating material. The influence of aging is not well known. Thus the materials are submitted to more or less severe environments in order to determine the significant evolutions of PDs. (J.S.) 2 refs.

  13. Low-voltage high-speed coupling modulation in silicon racetrack ring resonators.

    Science.gov (United States)

    Yang, Rui; Zhou, Linjie; Zhu, Haike; Chen, Jianping

    2015-11-02

    We demonstrate a low-voltage high-speed modulator based on a silicon racetrack resonator with a tunable Mach-Zehnder interferometer coupler. Both static measurement and dynamic modulation experiment are carried out. The 3-dB electro-optic bandwidth is measured to be >30 GHz beyond the limit by the cavity photon lifetime. A 32 Gb/s on-off keying (OOK) modulation is realized under a peak-to-peak drive voltage as low as 0.4 V, and a 28 Gb/s binary phase-shift-keying (BPSK) modulation is realized with a drive voltage of 3 V. The low drive voltages results in low energy consumptions of ~13.3 fJ/bit and ~1.2 pJ/bit for OOK and BPSK modulations, respectively.

  14. High-voltage pulse generator with inductive energy storage and thyratron

    CERN Document Server

    Vereshchagin, N M

    2002-01-01

    The high-voltage pulse generator with the energy storage on the basis of the single layer solenoid with inductivity of 10-35 mu H is described. The TGI2-500/20 thyratron able of breaking reliably the current with the amplitude of 800-850 A was used as the current breaker. The voltage on the load is formed in two stages. The first stage is characterized by the voltage of 20-25 kV and the growth time of 150-200 m. At the second stage there takes place fast (approx 60 ns) formation of the voltage up 90 kV. The scheme of the charge quenching decreases the instability of the current breaker time

  15. The world's first high voltage GaN-on-Diamond power semiconductor devices

    Science.gov (United States)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  16. High impulse voltage and current measurement techniques fundamentals, measuring instruments, measuring methods

    CERN Document Server

    Schon, Klaus

    2013-01-01

    Equipment to be installed in electric power-transmission and distribution systems must pass acceptance tests with standardized high-voltage or high-current test impulses which simulate the stress on the insulation caused by external lightning discharges and switching operations in the grid. High impulse voltages and currents are also used in many other fields of science and engineering for various applications. Therefore, precise impulse-measurement techniques are necessary, either to prevent an over- or understressing of the insulation or to guarantee the effectiveness and quality of the application. The book deals with: principal generator circuits for generating high-voltage and high-current impulses measuring systems and their calibration according to IEC 60060 and IEC 62475 methods of estimating uncertainties of measurement mathematical and experimental basis for characterizing the transfer behavior of spatially extended systems used for measuring fast transients. This book is intended for engineers and ...

  17. Design and power management of an offshore medium voltage DC microgrid realized through high voltage power electronics technologies and control

    Science.gov (United States)

    Grainger, Brandon Michael

    The growth in the electric power industry's portfolio of Direct Current (DC) based generation and loads have captured the attention of many leading research institutions. Opportunities for using DC based systems have been explored in electric ship design and have been a proven, reliable solution for transmitting bulk power onshore and offshore. To integrate many of the renewable resources into our existing AC grid, a number of power conversions through power electronics are required to condition the equipment for direct connection. Within the power conversion stages, there is always a requirement to convert to or from DC. The AC microgrid is a conceptual solution proposed for integrating various types of renewable generation resources. The fundamental microgrid requirements include the capability of operating in islanding mode and/or grid connected modes. The technical challenges associated with microgrids include (1) operation modes and transitions that comply with IEEE1547 without extensive custom engineering and (2) control architecture and communication. The Medium Voltage DC (MVDC) architecture, explored by the University of Pittsburgh, can be visualized as a special type of DC microgrid. This dissertation is multi-faceted, focused on many design aspects of an offshore DC microgrid. The focal points of the discussion are focused on optimized high power, high frequency magnetic material performance in electric machines, transformers, and DC/DC power converters---all components found within offshore, power system architectures. A new controller design based upon model reference control is proposed and shown to stabilize the electric motor drives (modeled as constant power loads), which serve as the largest power consuming entities in the microgrid. The design and simulation of a state-of-the-art multilevel converter for High Voltage DC (HVDC) is discussed and a component sensitivity analysis on fault current peaks is explored. A power management routine is

  18. High Input Voltage Hall Thruster Discharge Converter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The overall scope of this Phase I/II effort is the development of a high efficiency 15kW (nominal) Hall thruster discharge converter. In Phase I, Busek Co. Inc. will...

  19. Anomalous open-circuit voltage from a high-Tc superconducting dynamo

    Science.gov (United States)

    Bumby, C. W.; Jiang, Zhenan; Storey, J. G.; Pantoja, A. E.; Badcock, R. A.

    2016-03-01

    We report on the behavior of a high-Tc superconducting (HTS) homopolar dynamo which outputs a DC open-circuit voltage when the stator is in the superconducting state, but behaves as a conventional AC alternator when the stator is in the normal state. We observe that this time-averaged DC voltage arises from a change in the shape of the AC voltage waveform that is obtained from a normal conducting stator. The measured DC voltage is proportional to frequency, and decreases with increasing flux gap between the rotor magnet and the HTS stator wire. We observe that the DC output voltage decreases to zero at large flux gaps, although small differences between the normal-conducting and superconducting waveforms are still observed, which we attribute to screening currents in the HTS stator wire. Importantly, the normalised pulse shape is found to be a function of the rotor position angle only. Based on these observations, we suggest that the origin of this unexpected DC effect can be explained by a model first proposed by Giaever, which considers the impact of time-varying circulating eddy currents within the HTS stator wire. Such circulating currents form a superconducting shunt path which "short-circuits" the high field region directly beneath the rotor magnet, at those points in the cycle when the rotor magnet partially overlaps the superconducting stator wire. This reduces the output voltage from the device during these periods of the rotor cycle, leading to partial rectification of the output voltage waveform and hence the emergence of a time-averaged DC voltage.

  20. Speed optimized linear-mode high-voltage CMOS avalanche photodiodes with high responsivity.

    Science.gov (United States)

    Enne, R; Steindl, B; Zimmermann, H

    2015-10-01

    Two different speed optimized avalanche photodiodes (APDs) fabricated in a 0.35 μm standard high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) process with a high unamplified responsivity (avalanche gain M=1) of 0.41 A/W at 670 nm are presented. These APDs differ regarding the effective doping of the deep p well (90% and 75%), using lateral well modulation doping. Compared to the -3  dB bandwidth of the unmodulated APD with 100% doping (850 MHz), this optimization leads to an improved bandwidth of 1.02 and 1.25 GHz for the 75% APD and 90% APD, respectively, both at a gain of M=50.