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Sample records for high barrier amorphous

  1. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  2. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  3. Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

    International Nuclear Information System (INIS)

    Morel, D.L.; Moustakas, T.D.

    1981-01-01

    The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x/ /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence-band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band-gap regime

  4. Oxygen–induced barrier height changes in aluminium – amorphous ...

    African Journals Online (AJOL)

    The results show that the application of voltage causes charge exchange between the surface states and the semiconductor leading to a change in the height of the potential barrier for electrons passing from aluminium into the a-Se films. The empirically determined values of barrier height of Al/a-Se diodes with thin and ...

  5. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  6. Excessively High Vapor Pressure of Al-based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Jae Im Jeong

    2015-10-01

    Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

  7. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    International Nuclear Information System (INIS)

    Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

    2015-01-01

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

  8. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  9. Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

    Science.gov (United States)

    Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

    2012-01-11

    Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

  10. High pressure synthesis of amorphous TiO2 nanotubes

    Directory of Open Access Journals (Sweden)

    Quanjun Li

    2015-09-01

    Full Text Available Amorphous TiO2 nanotubes with diameters of 8-10 nm and length of several nanometers were synthesized by high pressure treatment of anatase TiO2 nanotubes. The structural phase transitions of anatase TiO2 nanotubes were investigated by using in-situ high-pressure synchrotron X-ray diffraction (XRD method. The starting anatase structure is stable up to ∼20GPa, and transforms into a high-density amorphous (HDA form at higher pressure. Pressure-modified high- to low-density transition was observed in the amorphous form upon decompression. The pressure-induced amorphization and polyamorphism are in good agreement with the previous results in ultrafine TiO2 nanoparticles and nanoribbons. The relationship between the LDA form and α-PbO2 phase was revealed by high-resolution transmission electron microscopy (HRTEM study. In addition, the bulk modulus (B0 = 158 GPa of the anatase TiO2 nanotubes is smaller than those of the corresponding bulks and nanoparticles (180-240 GPa. We suggest that the unique open-ended nanotube morphology and nanosize play important roles in the high pressure phase transition of TiO2 nanotubes.

  11. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  12. Kinetics of the high- to low-density amorphous water transition

    International Nuclear Information System (INIS)

    Koza, M M; Schober, H; Fischer, H E; Hansen, T; Fujara, F

    2003-01-01

    In situ neutron diffraction experiments have been carried out to study the kinetics of the transformation of high-density amorphous (HDA) water into its low-density amorphous state at temperatures 87 K ≤ T ≤ 110 K. It is found that three different stages are comprised in this transformation, namely an annealing process of the high-density matrix followed by a first-order-like transition into a low-density state, which can be further annealed at higher temperatures T ≤ 127 K. The annealing kinetics of the HDA state follows the logarithm of time as found in other systems showing polyamorphism. According to the theory of transformation by nucleation and growth the apparent first-order transition follows an Avrami-Kolmogorov behaviour. An energy barrier ΔE ∼ 33 k Jmol -1 is estimated from the temperature dependence of this transition

  13. High-density amorphous ice: nucleation of nanosized low-density amorphous ice

    Science.gov (United States)

    Tonauer, Christina M.; Seidl-Nigsch, Markus; Loerting, Thomas

    2018-01-01

    The pressure dependence of the crystallization temperature of different forms of expanded high-density amorphous ice (eHDA) was scrutinized. Crystallization at pressures 0.05-0.30 GPa was followed using volumetry and powder x-ray diffraction. eHDA samples were prepared via isothermal decompression of very high-density amorphous ice at 140 K to different end pressures between 0.07-0.30 GPa (eHDA0.07-0.3). At 0.05-0.17 GPa the crystallization line T x (p) of all eHDA variants is the same. At pressures  >0.17 GPa, all eHDA samples decompressed to pressures  <0.20 GPa exhibit significantly lower T x values than eHDA0.2 and eHDA0.3. We rationalize our findings with the presence of nanoscaled low-density amorphous ice (LDA) seeds that nucleate in eHDA when it is decompressed to pressures  <0.20 GPa at 140 K. Below ~0.17 GPa, these nanosized LDA domains are latent within the HDA matrix, exhibiting no effect on T x of eHDA<0.2. Upon heating at pressures  ⩾0.17 GPa, these nanosized LDA nuclei transform to ice IX nuclei. They are favored sites for crystallization and, hence, lower T x . By comparing crystallization experiments of bulk LDA with the ones involving nanosized LDA we are able to estimate the Laplace pressure and radius of ~0.3-0.8 nm for the nanodomains of LDA. The nucleation of LDA in eHDA revealed here is evidence for the first-order-like nature of the HDA  →  LDA transition, supporting water’s liquid-liquid transition scenarios.

  14. Relaxation Time of High-Density Amorphous Ice

    Science.gov (United States)

    Handle, Philip H.; Seidl, Markus; Loerting, Thomas

    2012-06-01

    Amorphous water plays a fundamental role in astrophysics, cryoelectron microscopy, hydration of matter, and our understanding of anomalous liquid water properties. Yet, the characteristics of the relaxation processes taking place in high-density amorphous ice (HDA) are unknown. We here reveal that the relaxation processes in HDA at 110-135 K at 0.1-0.2 GPa are of collective and global nature, resembling the alpha relaxation in glassy material. Measured relaxation times suggest liquid-like relaxation characteristics in the vicinity of the crystallization temperature at 145 K. By carefully relaxing pressurized HDA for several hours at 135 K, we produce a state that is closer to the ideal glass state than all HDA states discussed so far in literature.

  15. High-density amorphous ice: A path-integral simulation

    Science.gov (United States)

    Herrero, Carlos P.; Ramírez, Rafael

    2012-09-01

    Structural and thermodynamic properties of high-density amorphous (HDA) ice have been studied by path-integral molecular dynamics simulations in the isothermal-isobaric ensemble. Interatomic interactions were modeled by using the effective q-TIP4P/F potential for flexible water. Quantum nuclear motion is found to affect several observable properties of the amorphous solid. At low temperature (T = 50 K) the molar volume of HDA ice is found to increase by 6%, and the intramolecular O-H distance rises by 1.4% due to quantum motion. Peaks in the radial distribution function of HDA ice are broadened with respect to their classical expectancy. The bulk modulus, B, is found to rise linearly with the pressure, with a slope ∂B/∂P = 7.1. Our results are compared with those derived earlier from classical and path-integral simulations of HDA ice. We discuss similarities and discrepancies with those earlier simulations.

  16. High-Gain Avalanche Rushing amorphous Photoconductor (HARP) detector

    Energy Technology Data Exchange (ETDEWEB)

    Tanioka, K. [NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)], E-mail: tanioka.k-jg@nhk.or.jp

    2009-09-01

    We have been studying a very sensitive image sensor since the early 1980s. In 1985, the author found for the first time that an experimental pickup tube with an amorphous selenium photoconductive target exhibits high sensitivity with excellent picture quality because of a continuous and stable avalanche multiplication phenomenon. We named the pickup tube with an amorphous photoconductive layer operating in the avalanche-mode 'HARP': High-gain Avalanche Rushing amorphous Photoconductor. A color camera equipped with the HARP pickup tubes has a maximum sensitivity of 11 lx at F8. This means that the HARP camera is about 100 times as sensitive as that of CCD camera for broadcasting. This ultrahigh-sensitivity HARP pickup tube is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications, including medical diagnoses, biotech research, and nighttime surveillance. In addition, since the HARP target can convert X-rays into electrons directly, it should be possible to exploit this capability to produce X-ray imaging devices with unparalleled levels of resolution and sensitivity.

  17. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  18. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  19. Exact theory of dense amorphous hard spheres in high dimension. II. The high density regime and the Gardner transition.

    Science.gov (United States)

    Kurchan, Jorge; Parisi, Giorgio; Urbani, Pierfrancesco; Zamponi, Francesco

    2013-10-24

    We consider the theory of the glass phase and jamming of hard spheres in the large space dimension limit. Building upon the exact expression for the free-energy functional obtained previously, we find that the random first order transition (RFOT) scenario is realized here with two thermodynamic transitions: the usual Kauzmann point associated with entropy crisis and a further transition at higher pressures in which a glassy structure of microstates is developed within each amorphous state. This kind of glass-glass transition into a phase dominating the higher densities was described years ago by Elisabeth Gardner, and may well be a generic feature of RFOT. Microstates that are small excitations of an amorphous matrix-separated by low entropic or energetic barriers-thus emerge naturally, and modify the high pressure (or low temperature) limit of the thermodynamic functions.

  20. The glass transition in high-density amorphous ice.

    Science.gov (United States)

    Loerting, Thomas; Fuentes-Landete, Violeta; Handle, Philip H; Seidl, Markus; Amann-Winkel, Katrin; Gainaru, Catalin; Böhmer, Roland

    2015-01-01

    There has been a long controversy regarding the glass transition in low-density amorphous ice (LDA). The central question is whether or not it transforms to an ultraviscous liquid state above 136 K at ambient pressure prior to crystallization. Currently, the most widespread interpretation of the experimental findings is in terms of a transformation to a superstrong liquid above 136 K. In the last decade some work has also been devoted to the study of the glass transition in high-density amorphous ice (HDA) which is in the focus of the present review. At ambient pressure HDA is metastable against both ice I and LDA, whereas at > 0.2 GPa HDA is no longer metastable against LDA, but merely against high-pressure forms of crystalline ice. The first experimental observation interpreted as the glass transition of HDA was made using in situ methods by Mishima, who reported a glass transition temperature T g of 160 K at 0.40 GPa. Soon thereafter Andersson and Inaba reported a much lower glass transition temperature of 122 K at 1.0 GPa. Based on the pressure dependence of HDA's T g measured in Innsbruck, we suggest that they were in fact probing the distinct glass transition of very high-density amorphous ice (VHDA). Very recently the glass transition in HDA was also observed at ambient pressure at 116 K. That is, LDA and HDA show two distinct glass transitions, clearly separated by about 20 K at ambient pressure. In summary, this suggests that three glass transition lines can be defined in the p-T plane for LDA, HDA, and VHDA.

  1. Structure of high-density amorphous ice under pressure

    International Nuclear Information System (INIS)

    Klotz, S.; Hamel, G.; Loveday, J.S.; Nelmes, R.J.; Guthrie, M.; Soper, A.K.

    2002-01-01

    We report in situ neutron diffraction studies of high-density amorphous ice (HDA) at 100 K at pressures up to 2.2 GPa. We find that the compression is achieved by a strong contraction (∼20%) of the second neighbor coordination shell, so that at 2.2 GPa it closely approaches the first coordination shell, which itself remains intact in both structure and size. The hydrogen bond orientations suggest an absence of hydrogen bonding between first and second shells and that HDA has increasingly interpenetrating hydrogen bond networks under pressure

  2. Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

    International Nuclear Information System (INIS)

    Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

    2007-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

  3. Stabilized amorphous glibenclamide nanoparticles by high-gravity technique

    International Nuclear Information System (INIS)

    Yu Lei; Li Caixia; Le Yuan; Chen Jianfeng; Zou Haikui

    2011-01-01

    Highlights: · Amorphous glibenclamide nanoparticles of 220 nm are obtained using the high-gravity technique. · The dissolution rate of these nanoparticles achieves 85% in 5 min, while those of the raw glibenclamide and the commercial glibenclamide tablet only reach 35% and 55% respectively during the same period. · The morphology, particle size, crystalline form and dissolution rate of these nanoparticles almost remain constant after keeping more than 70 days. - Abstract: The stable amorphous glibenclamide nanoparticles was obtained via anti-solvent precipitation using the high-gravity technique in this study. The effects of operating variables on the particle size were investigated. The properties of glibenclamide nanoparticles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, differential scanning calorimetry (DSC) and dissolution test. The prepared glibenclamide nanoparticles had a mean size of 220 nm within a narrow distribution. The dissolution rate of glibenclamide nanoparticles was obviously faster than that of the raw glibenclamide or the commercial glibenclamide tablet. It achieved 85% in 5 min, while those of the raw glibenclamide and the commercial glibenclamide tablet achieved 35% and 55% respectively during the same period. The physical stability of the nanoparticles was tested after storing for more than 70 days at room conditions. Their morphology, particle size, crystalline form and dissolution rate almost remained constant during storage.

  4. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

    International Nuclear Information System (INIS)

    Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

    2008-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Amorphous carbon nanofibres inducing high specific capacitance of deposited hydrous ruthenium oxide

    International Nuclear Information System (INIS)

    Barranco, V.; Pico, F.; Ibanez, J.; Lillo-Rodenas, M.A.; Linares-Solano, A.; Kimura, M.; Oya, A.; Rojas, R.M.; Amarilla, J.M.; Rojo, J.M.

    2009-01-01

    Composites consisting of ruthenium oxide particles deposited on amorphous carbon nanofibres are prepared by a repetitive impregnation procedure. The choice of amorphous carbon nanofibres as support of amorphous ruthenium oxide leads to composites in which the deposited oxide consists of aggregates of extremely small primary particles (1-1.5 nm-size) and showing high porosity (specific surface area of 450 m 2 g -1 ). This special deposition of the oxide seems to favour: (i) high oxide capacitance (1000 Fg -1 ) at high oxide loadings (up to 20 wt%) and (ii) high capacitance retention (ca. 80% from the initial oxide capacitance) at high current densities (200 mA cm -2 ). Amorphous carbon nanofibres are suitable supports for amorphous ruthenium oxide and perhaps for other amorphous oxides acting as active electrode materials.

  6. Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

    International Nuclear Information System (INIS)

    Hansen, W.L.; Haller, E.E.

    1976-10-01

    Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

  7. Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials

    NARCIS (Netherlands)

    Kroezen, H. J.; Eising, G.; ten Brink, Gert; Palasantzas, G.; Kooi, B. J.; Pauza, A.

    2012-01-01

    The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface

  8. Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

    International Nuclear Information System (INIS)

    Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

    2012-01-01

    Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

  9. Amorphous Cu-Ag films with high stability

    International Nuclear Information System (INIS)

    Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

    1982-06-01

    Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

  10. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  11. Amorphous silica studied by high energy x-ray diffraction

    DEFF Research Database (Denmark)

    Poulsen, H.F.; Neuefeind, J.; Neumann, H.B.

    1995-01-01

    -ray and neutron data. A feasibility study of amorphous silica has been performed at 95 keV, using a wiggler synchrotron beam-line at HASYLAB and a cylindrical sample, 3 mm in diameter. The range of Q between 0.8 and 32 Angstrom(-1) was covered. A thorough discussion of the experimental challenges is given...

  12. Study on applicability of highly corrosion-resistant amorphous coating techniques to components of reprocessing plant

    International Nuclear Information System (INIS)

    Ebata, Makoto; Okuyama, Gen; Chiba, Shigeru; Matsunaga, Tsunebumi

    1991-01-01

    In view of the growing need for prolongation of lives of reprocessing plant installations, we recently investigated the applicability of highly corrosion-resistant amorphous coating techniques to such plant components as to be subjected to a badly corrosive environment created by high temperatures, boiling nitric acid (HNO 3 ), etc. As the result, giving a preference to the Ta-based amorphous alloys exhibiting high corrosion-resistance in HNO 3 solutions, we made specimens of stainless steel plates coated with the above amorphous alloys through the sputtering process thereof. To our satisfaction, these specimens successfully passed various HNO 3 corrosion tests as described later on. Ta-based amorphous films give cathodic protection to 310 Nb stainless steel plates, and that with extremely low corrosion rates of themselves as protecting agents. For these reasons, we are confident that there will be no practical problems at all, in case we adopt stainless steel plates partially coated with such amorphous alloys for use in a nitric-acid environment. In this paper, we explain the comparative tests for various amorphous alloys with different compositions, referring also to the thus-selected Ta-based amorphous alloy along with several kinds of corrosion tests specially arranged for the same alloy. (author)

  13. Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier

    International Nuclear Information System (INIS)

    Henderson, Lucas B.; Ekerdt, John G.

    2009-01-01

    Evaluation of chemical vapor deposited amorphous ruthenium-phosphorous alloy as a copper interconnect diffusion barrier is reported. Approximately 5 nm-thick Ru(P) and TaN films in Cu/Ru(P)/SiO 2 /p-Si and Cu/TaN/SiO 2 /p-Si stacks are subjected to bias-temperature stress at electric fields from 2.0 MV/cm to 4.0 MV/cm and temperatures from 200 deg. C to 300 deg. C . Time-to-failure measurements suggest that chemical vapor deposited Ru(P) is comparable to physical vapor deposited TaN in preventing Cu diffusion. The activation energy of failure for stacks using Ru(P) as a liner is determined to be 1.83 eV in the absence of an electric field. Multiple models of dielectric failure, including the E and Schottky-type √E models indicate that Ru(P) is acceptable for use as a diffusion barrier at conditions likely in future technology generations

  14. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  15. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  16. Gas barrier properties of hydrogenated amorphous carbon films coated on polyethylene terephthalate by plasma polymerization in argon/n-hexane gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Polonskyi, Oleksandr; Kylián, Ondřej, E-mail: ondrej.kylian@gmail.com; Petr, Martin; Choukourov, Andrei; Hanuš, Jan; Biederman, Hynek

    2013-07-01

    Hydrogenated amorphous carbon thin films were deposited by RF plasma polymerization in argon/n-hexane gas mixture on polyethylene terephthalate (PET) foils. It was found that such deposited films may significantly improve the barrier properties of PET. It was demonstrated that the principal parameter that influences barrier properties of such deposited films towards oxygen and water vapor is the density of the coatings. Moreover, it was shown that for achieving good barrier properties it is advantageous to deposit coatings with very low thickness. According to the presented results, optimal thickness of the coating should not be higher than several tens of nm. - Highlights: • a-C:H films were prepared by plasma polymerization in Ar/n-hexane atmosphere. • Barrier properties of coatings are dependent on their density and thickness. • Highest barrier properties were observed for films with thickness 15 nm.

  17. High Dehumidification Performance of Amorphous Cellulose Composite Membranes prepared from Trimethylsilyl Cellulose

    KAUST Repository

    Puspasari, Tiara

    2018-04-11

    Cellulose is widely regarded as an environmentally friendly, natural and low cost material which can significantly contribute the sustainable economic growth. In this study, cellulose composite membranes were prepared via regeneration of trimethylsilyl cellulose (TMSC), an easily synthesized cellulose derivative. The amorphous hydrophilic feature of the regenerated cellulose enabled fast permeation of water vapour. The pore-free cellulose layer thickness was adjustable by the initial TMSC concentration and acted as an efficient gas barrier. As a result, a 5,000 GPU water vapour transmission rate (WVTR) at the highest ideal selectivity of 1.1 x 106 was achieved by the membranes spin coated from a 7% (w/w) TMSC solution. The membranes maintained a 4,000 GPU WVTR with selectivity of 1.1 x 104 in the mixed-gas experiments, surpassing the performances of the previously reported composite membranes. This study provides a simple way to not only produce high performance membranes but also to advance cellulose as a low-cost and sustainable membrane material for dehumidification applications.

  18. Formation of soft magnetic high entropy amorphous alloys composites containing in situ solid solution phase

    Science.gov (United States)

    Wei, Ran; Sun, Huan; Chen, Chen; Tao, Juan; Li, Fushan

    2018-03-01

    Fe-Co-Ni-Si-B high entropy amorphous alloys composites (HEAACs), which containing high entropy solid solution phase in amorphous matrix, show good soft magnetic properties and bending ductility even in optimal annealed state, were successfully developed by melt spinning method. The crystallization phase of the HEAACs is solid solution phase with body centered cubic (BCC) structure instead of brittle intermetallic phase. In addition, the BCC phase can transformed into face centered cubic (FCC) phase with temperature rise. Accordingly, Fe-Co-Ni-Si-B high entropy alloys (HEAs) with FCC structure and a small amount of BCC phase was prepared by copper mold casting method. The HEAs exhibit high yield strength (about 1200 MPa) and good plastic strain (about 18%). Meanwhile, soft magnetic characteristics of the HEAs are largely reserved from HEAACs. This work provides a new strategy to overcome the annealing induced brittleness of amorphous alloys and design new advanced materials with excellent comprehensive properties.

  19. Kinetically Controlled Two-Step Amorphization and Amorphous-Amorphous Transition in Ice

    Science.gov (United States)

    Lin, Chuanlong; Yong, Xue; Tse, John S.; Smith, Jesse S.; Sinogeikin, Stanislav V.; Kenney-Benson, Curtis; Shen, Guoyin

    2017-09-01

    We report the results of in situ structural characterization of the amorphization of crystalline ice Ih under compression and the relaxation of high-density amorphous (HDA) ice under decompression at temperatures between 96 and 160 K by synchrotron x-ray diffraction. The results show that ice Ih transforms to an intermediate crystalline phase at 100 K prior to complete amorphization, which is supported by molecular dynamics calculations. The phase transition pathways show clear temperature dependence: direct amorphization without an intermediate phase is observed at 133 K, while at 145 K a direct Ih-to-IX transformation is observed; decompression of HDA shows a transition to low-density amorphous ice at 96 K and ˜1 Pa , to ice Ic at 135 K and to ice IX at 145 K. These observations show that the amorphization of compressed ice Ih and the recrystallization of decompressed HDA are strongly dependent on temperature and controlled by kinetic barriers. Pressure-induced amorphous ice is an intermediate state in the phase transition from the connected H-bond water network in low pressure ices to the independent and interpenetrating H-bond network of high-pressure ices.

  20. High speed PVD thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Beele, W. [Sulzer Metco Coatings BV (Netherlands); Eschendorff, G. [Sulzer Metco Coatings BV (Netherlands); Eldim BV (Netherlands)

    2006-07-15

    The high speed PVD process (HS-PVD) combines gas phase coating synthesis with high deposition rates. The process has been demonstrated for high purity YSZ deposited as a chemically bonded top thermal barrier with columnar structure of EB-PVD features. The process can manufacture EB-PVD like coatings that match in regards to their TGO-formation and columnar structure. Coatings with a columnar structure formed by individual columns of 1/4 of the diameter of a classical EB-PVD type TBC have been deposited. These coatings have the potential to prove a significant reduction in thermal conductivity and in erosion performance. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  1. High speed PVD thermal barrier coatings

    International Nuclear Information System (INIS)

    Beele, W.; Eschendorff, G.

    2006-01-01

    The high speed PVD process (HS-PVD) combines gas phase coating synthesis with high deposition rates. The process has been demonstrated for high purity YSZ deposited as a chemically bonded top thermal barrier with columnar structure of EB-PVD features. The process can manufacture EB-PVD like coatings that match in regards to their TGO-formation and columnar structure. Coatings with a columnar structure formed by individual columns of 1/4 of the diameter of a classical EB-PVD type TBC have been deposited. These coatings have the potential to prove a significant reduction in thermal conductivity and in erosion performance. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  2. Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

    International Nuclear Information System (INIS)

    Bursilll, L.A.; Peng, Julin; Gurarie, V.N.; Orlov, A.V.; Prawer, S.

    1995-01-01

    High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp 2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp 3 bonds is significant. 15 refs., 5 figs

  3. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  4. High pressure synthesis of amorphous TiO{sub 2} nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Li, Quanjun; Liu, Ran; Wang, Tianyi; Xu, Ke; Dong, Qing; Liu, Bo; Liu, Bingbing, E-mail: liubb@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Liu, Jing [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2015-09-15

    Amorphous TiO{sub 2} nanotubes with diameters of 8-10 nm and length of several nanometers were synthesized by high pressure treatment of anatase TiO{sub 2} nanotubes. The structural phase transitions of anatase TiO{sub 2} nanotubes were investigated by using in-situ high-pressure synchrotron X-ray diffraction (XRD) method. The starting anatase structure is stable up to ∼20GPa, and transforms into a high-density amorphous (HDA) form at higher pressure. Pressure-modified high- to low-density transition was observed in the amorphous form upon decompression. The pressure-induced amorphization and polyamorphism are in good agreement with the previous results in ultrafine TiO{sub 2} nanoparticles and nanoribbons. The relationship between the LDA form and α-PbO{sub 2} phase was revealed by high-resolution transmission electron microscopy (HRTEM) study. In addition, the bulk modulus (B{sub 0} = 158 GPa) of the anatase TiO{sub 2} nanotubes is smaller than those of the corresponding bulks and nanoparticles (180-240 GPa). We suggest that the unique open-ended nanotube morphology and nanosize play important roles in the high pressure phase transition of TiO{sub 2} nanotubes.

  5. Improving co-amorphous drug formulations by the addition of the highly water soluble amino acid proline

    DEFF Research Database (Denmark)

    Jensen, Katrine Birgitte Tarp; Löbmann, Korbinian; Rades, Thomas

    2014-01-01

    Co-amorphous drug amino acid mixtures were previously shown to be a promising approach to create physically stable amorphous systems with the improved dissolution properties of poorly water-soluble drugs. The aim of this work was to expand the co-amorphous drug amino acid mixture approach...... by combining the model drug, naproxen (NAP), with an amino acid to physically stabilize the co-amorphous system (tryptophan, TRP, or arginine, ARG) and a second highly soluble amino acid (proline, PRO) for an additional improvement of the dissolution rate. Co-amorphous drug-amino acid blends were prepared...... the molecular interactions in the form of hydrogen bonds between all three components in the mixture. A salt formation between the acidic drug, NAP, and the basic amino acid, ARG, was found in co-amorphous NAP–ARG. In comparison to crystalline NAP, binary NAP–TRP and NAP–ARG, it could be shown that the highly...

  6. High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

    International Nuclear Information System (INIS)

    Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

    1988-01-01

    The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

  7. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    International Nuclear Information System (INIS)

    Shpotyuk, O.

    1997-01-01

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

  8. High throughput deposition of hydrogenated amorphous carbon coatings on rubber with expanding thermal plasma

    NARCIS (Netherlands)

    Pei, Y.T.; Eivani, A.R.; Zaharia, T.; Kazantis, A.V.; Sanden, van de M.C.M.; De Hosson, J.T.M.

    2014-01-01

    Flexible hydrogenated amorphous carbon (a-C:H) thin film coated on rubbers has shown outstanding protection of rubber seals from friction and wear. This work concentrates on the potential advances of expanding thermal plasma (ETP) process for a high throughput deposition of a-C:H thin films in

  9. Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

    2018-01-31

    A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

  10. In situ neutron diffraction studies of high density amorphous ice under pressure

    International Nuclear Information System (INIS)

    Klotz, Stefan; Straessle, Th; Saitta, A M; Rousse, G; Hamel, G; Nelmes, R J; Loveday, J S; Guthrie, M

    2005-01-01

    We review recent in situ neutron diffraction studies on the structural pressure dependence and the recrystallization of dense amorphous ices up to 2 GPa. Progress in high pressure techniques and data analysis methods allows the reliable determination of all three partial structure factors of amorphous ice under pressure. The strong pressure dependence of the g OO (r) correlation function shows that the isothermal compression of high density amorphous ice (HDA) at 100 K is achieved by a contraction (∼ 20%) of the second-neighbour coordination shell leading to a strong increase in coordination. The g DD (r) and g OD (r) structure factors are, in contrast, only weakly sensitive to pressure. These data allow a comparison with structural features of the recently reported 'very high density amorphous ice' (VHDA) which indicates that VHDA at ambient pressure is very similar to compressed HDA, at least up to the second-neighbour shell. The recrystallization of HDA has been investigated in the range 0.3-2 GPa. It is shown that hydrogen-disordered phases are produced which normally grow only from the liquid, such as ice XII, and in particular ice IV. These findings are in good agreement with results on quench-recovered samples

  11. High tension generator for corona barrier discharge

    International Nuclear Information System (INIS)

    Baltag, O.; Costandache, D.; Gheorghiu, M.; Paraschivescu, A.; Popa, G.

    2001-01-01

    Different types of high-voltage generators are in use for the study of low pressure (or atmospheric) discharges. Mostly used are the Tesla coils generators or the power generators working in linear or switching regime. The Tesla coils generators have the advantage of a simple bloc diagram. In exchange, they have a number of short-comings, such as: the difficulty in modifying the frequency of the high voltage pulses, generation of a high voltage and frequency pulse train, the amplitude is not constant.This paper presents a high-voltage generator meant to be used in the study of the dielectric barrier discharges (DBD). The bloc diagram is presented. Performances obtained are as follows: - Generated frequency: 10 Hz - 100 Hz, 100 Hz - 1 KHz, 1 KHz - 10 KHz; - High voltage pulses control: a single pulse from an internal or external generator; - Synchronization with the oscilloscope, variable delay: 5 μs - 0.1 s; - Output voltage: variable both smoothly and in steps: 1 kV -15 kV; - High voltage polarity: mono and bipolar; - Output power during the continuous duty: 300 VA (maximum 600 VA for a short time); - Pulse energy: 0.23 J; - Pulse duration: 4 μs - 50 μs

  12. Large-deformation and high-strength amorphous porous carbon nanospheres

    Science.gov (United States)

    Yang, Weizhu; Mao, Shimin; Yang, Jia; Shang, Tao; Song, Hongguang; Mabon, James; Swiech, Wacek; Vance, John R.; Yue, Zhufeng; Dillon, Shen J.; Xu, Hangxun; Xu, Baoxing

    2016-04-01

    Carbon is one of the most important materials extensively used in industry and our daily life. Crystalline carbon materials such as carbon nanotubes and graphene possess ultrahigh strength and toughness. In contrast, amorphous carbon is known to be very brittle and can sustain little compressive deformation. Inspired by biological shells and honeycomb-like cellular structures in nature, we introduce a class of hybrid structural designs and demonstrate that amorphous porous carbon nanospheres with a thin outer shell can simultaneously achieve high strength and sustain large deformation. The amorphous carbon nanospheres were synthesized via a low-cost, scalable and structure-controllable ultrasonic spray pyrolysis approach using energetic carbon precursors. In situ compression experiments on individual nanospheres show that the amorphous carbon nanospheres with an optimized structure can sustain beyond 50% compressive strain. Both experiments and finite element analyses reveal that the buckling deformation of the outer spherical shell dominates the improvement of strength while the collapse of inner nanoscale pores driven by twisting, rotation, buckling and bending of pore walls contributes to the large deformation.

  13. High strength nanostructured Al-based alloys through optimized processing of rapidly quenched amorphous precursors.

    Science.gov (United States)

    Kim, Song-Yi; Lee, Gwang-Yeob; Park, Gyu-Hyeon; Kim, Hyeon-Ah; Lee, A-Young; Scudino, Sergio; Prashanth, Konda Gokuldoss; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2018-01-18

    We report the methods increasing both strength and ductility of aluminum alloys transformed from amorphous precursor. The mechanical properties of bulk samples produced by spark-plasma sintering (SPS) of amorphous Al-Ni-Co-Dy powders at temperatures above 673 K are significantly enhanced by in-situ crystallization of nano-scale intermetallic compounds during the SPS process. The spark plasma sintered Al 84 Ni 7 Co 3 Dy 6 bulk specimens exhibit 1433 MPa compressive yield strength and 1773 MPa maximum strength together with 5.6% plastic strain, respectively. The addition of Dy enhances the thermal stability of primary fcc Al in the amorphous Al-TM -RE alloy. The precipitation of intermetallic phases by crystallization of the remaining amorphous matrix plays important role to restrict the growth of the fcc Al phase and contributes to the improvement of the mechanical properties. Such fully crystalline nano- or ultrafine-scale Al-Ni-Co-Dy systems are considered promising for industrial application because their superior mechanical properties in terms of a combination of very high room temperature strength combined with good ductility.

  14. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  15. High Performance Multi Barrier Thermionic Devices

    National Research Council Canada - National Science Library

    Vashaee, Daryoosh; Shakouri, Ali

    2003-01-01

    Thermoelectric transport perpendicular to layers in multiple barrier superlattice structures is investigated theoretically in two limiting cases of no lateral momentum scattering and strong scattering...

  16. High-frequency behavior of amorphous microwires and its applications

    International Nuclear Information System (INIS)

    Marin, P.; Cortina, D.; Hernando, A.

    2005-01-01

    A magnetic microwire is a continuous filament of total diameter less than 100 μm consisting of an inner metallic magnetic nuclei covered by a glassy outer shell, usually obtained by Taylor's technique, with interesting magnetic properties connected with its high axial magnetic anisotropy. Magnetic sensors based on microwires used, as operating principle, the strong connection between the composition and the uniaxial anisotropy through a magnetostriction constant such as the large Barkhausen effect, Mateucci effect and giant magneto-impedance effect. The study of the microwave properties is also very promising technologically. In the microwave region (approaching GHz range), the ferromagnetic resonance (FMR) occurs and it is connected with the spin precession of the magnetisation vector due to the effect of the high-frequency electromagnetic field applied such that the magnetic component is perpendicular to the magnetisation vector. The natural ferromagnetic resonance (NFMR) has been also observed. The frequency depends upon the value of magnetic anisotropy and it is characterised by the single well-distinguished line in the 2-10 GHz range. Tags detector based on the microwires FMR and a new kind of electromagnetic radiation absorbers based on the microwires NFMR have been developed

  17. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  18. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  19. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2015-02-18

    Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

  20. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

    1997-12-31

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

  1. High-efficiency amorphous silicon solar cell on a periodic nanocone back reflector

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Ching-Mei; Cui, Yi [Department of Materials Science and Engineering, Durand Building, 496 Lomita Mall, Stanford University, Stanford, CA 94305-4034 (United States); Battaglia, Corsin; Pahud, Celine; Haug, Franz-Josef; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue Breguet 2, 2000 Neuchatel (Switzerland); Ruan, Zhichao; Fan, Shanhui [Department of Electrical Engineering, Stanford University (United States)

    2012-06-15

    An amorphous silicon solar cell on a periodic nanocone back reflector with a high 9.7% initial conversion efficiency is presented. The optimized back-reflector morphology provides powerful light trapping and enables excellent electrical cell performance. Up-scaling to industrial production of large-area modules should be possible using nanoimprint lithography. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  3. Synthesis and high temperature stability of amorphous Si(B)CN-MWCNT composite nanowires

    Science.gov (United States)

    Bhandavat, Romil; Singh, Gurpreet

    2012-02-01

    We demonstrate synthesis of a hybrid nanowire structure consisting of an amorphous polymer-derived silicon boron-carbonitride (Si-B-C-N) shell with a multiwalled carbon nanotube core. This was achieved through a novel process involving preparation of a boron-modified liquid polymeric precursor through a reaction of trimethyl borate and polyureasilazane under atmospheric conditions; followed by conversion of polymer to glass-ceramic on carbon nanotube surfaces through controlled heating. Chemical structure of the polymer was studied by liquid-NMR while evolution of various ceramic phases was studied by Raman spectroscopy, solid-NMR, Fourier transform infrared and X-ray photoelectron spectroscopy. Electron microscopy and X-ray diffraction confirms presence of amorphous Si(B)CN coating on individual nanotubes for all specimen processed below 1400 degree C. Thermogravimetric analysis, followed by TEM revealed high temperature stability of the carbon nanotube core in flowing air up to 1300 degree C.

  4. PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

    Energy Technology Data Exchange (ETDEWEB)

    Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-11-01

    The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)

  5. High-resolution transmission electron microscopy of grain-refining particles in amorphous aluminum alloys

    International Nuclear Information System (INIS)

    Schumacher, P.; Greer, A.L.

    1996-01-01

    The nucleation mechanism of Al-Ti-B grain refiners is studied in an Al-based amorphous alloy. The ability to limit growth of α-Al in the amorphous alloy permits the microscopical observation of nucleation events on boride particles. Earlier studies of this kind are extended by using high-resolution electron microscopy. This shows that the efficient nucleation α-Al depends on the TiB 2 particles being coated with a thin layer of Al 3 Ti, which can form only when there is some excess titanium in the melt. The aluminide layer, stabilized by adsorption effects, can be as little as a few monolayers thick, and is coherent with the boride. The nature of this layer, and its importance for the nucleation mechanism are discussed. The fading of the grain refinement action is also considered

  6. Low-impact, high toughness transportation barriers.

    Science.gov (United States)

    2012-10-01

    Alternatives to existing transportation truck escape ramps and crash barriers are examined using arrays of : wood, bamboo, and fiberglass structural elements that act as energy absorbers as they deform. The : behaviors of each material type are analy...

  7. High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    He, Z.; Liu, X. R.; Hong, S. M., E-mail: hpswjtu@gmail.com, E-mail: smhong@home.swjtu.edu.cn [Laboratory of High Pressure Physics, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031 (China); Wang, Z. G. [National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900 (China); Zhu, H. Y. [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Peng, J. P. [School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-07-07

    The high-pressure behavior of melt-quenched amorphous selenium (a-Se) has been investigated via ultrasonic measurements and Raman scattering at room temperature. The ultrasonic measurements were conducted on a-Se in a multi-anvil apparatus with two different sample assemblies at pressures of up to 4.5 and 4.8 GPa. We discovered that similar kinks occur in the slopes of the pressure dependence characteristics of the travel time and the sound velocity in both shear and longitudinal waves in the 2.0–2.5 GPa range. These kinks are independent of the sample assemblies, indicating an intrinsic transformation of the a-Se. Additionally, we deduced the pressure-volume relationship of a-Se from the sound velocity characteristics using the Birch–Murnaghan equation of state, and the results agreed well with those of previous reports. In situ high-pressure Raman scattering measurements of a-Se were conducted in a diamond anvil cell with an 830 nm excitation line up to a pressure of 4.3 GPa. We found that the characteristic band of a-Se at ∼250 cm{sup −1} experienced a smooth shift to a lower frequency with pressure, but a sharp slope change in the band intensity versus pressure occurred near 2.5 GPa. The results of X-ray diffraction and differential scanning calorimetry measurements indicate that the samples remain in their amorphous states after decompression. Thus, we proposed that the abnormal compression behavior of a-Se in the 2.0–2.5 GPa range can be attributed to pressure-induced local atomic reconfiguration, implying an amorphous-amorphous transition of the elementary selenium.

  8. Defect kinetics and resistance to amorphization in zirconium carbide

    International Nuclear Information System (INIS)

    Zheng, Ming-Jie; Szlufarska, Izabela; Morgan, Dane

    2015-01-01

    To better understand the radiation response of zirconium carbide (ZrC), and in particular its excellent resistance to amorphization, we have used density functional theory methods to study the kinetics of point defects in ZrC. The migration barriers and recombination barriers of the simple point defects are calculated using the ab initio molecular dynamics simulation and the nudged elastic band method. These barriers are used to estimate C and Zr interstitial and vacancy diffusion and Frenkel pair recombination rates. A significant barrier for C Frenkel pair recombination is found but it is shown that a large concentration of C vacancies reduces this barrier dramatically, allowing facile healing of radiation damage. The mechanisms underlying high resistance to amorphization of ZrC were analyzed from the perspectives of structural, thermodynamic, chemical and kinetic properties. This study provides insights into the amorphization resistance of ZrC as well as a foundation for understanding general radiation damage in this material

  9. Development of an amorphous surge blocker for a high voltage acceleration power supply of the neutral beam injectors

    International Nuclear Information System (INIS)

    Mizuno, Makoto; Ohara, Yoshihiro; Watanabe, Kazuhiro; Ozaki, Akira.

    1993-10-01

    An amorphous surge blocker for a high voltage acceleration power supply for the neutral beam injectors has been developed. Since the saturation magnetic flux density of the amorphous core is higher than that of the ferrite core, the surge blocker made of amorphous cores can be reduced in size appreciably compared to the conventional ferrite surge blocker. A 350 kV, 0.05 volt-second amorphous surge blocker was designed, fabricated and tested. The amorphous core was made by winding an amorphous tape with a film for the layer insulation and was heat-treated to recover the magnetic characteristics. The core is molded by epoxy resin and installed in a FRP insulator tube filled with SF 6 gas for the insulation. The volt-second measured was higher than the designed value and the electrical breakdown along the cores and between layers was not observed. This test result shows that the amorphous surge blocker is applicable for a dc acceleration power supply for high energy neutral beam injectors. (author)

  10. High-Sulfur-Vacancy Amorphous Molybdenum Sulfide as a High Current Electrocatalyst in Hydrogen Evolution

    KAUST Repository

    Lu, Ang-Yu

    2016-08-31

    The remote hydrogen plasma is able to create abundant S-vacancies on amorphous molybdenum sulfide (a-MoSx) as active sites for hydrogen evolution. The results demonstrate that the plasma-treated a-MoSx exhibits superior performance and higher stability than Pt in a proton exchange membrane based electrolyzers measurement as a proof-of-concept of industrial application.

  11. Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

    Science.gov (United States)

    Li, Yanhui; Wang, Zhenmin; Zhang, Wei

    2018-05-01

    The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.

  12. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  13. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  14. High-resolution observation of phase contrast at 1MeV. Amorphous or crystalline objects

    International Nuclear Information System (INIS)

    Bourret, A.; Desseaux, J.

    1975-01-01

    Many authors have stressed the possibilities of high voltage to improve resolution, but owing to numerous experimental difficulties the resolution limit at 1MeV, which lies around 1A for conventional lenses, has so far been unattainable. Thus the phase contrast at 1MeV has not been studied on evaporated objects. On the other hand the fringes of crystal planes have been observed at 1MeV. the CEN-G microscope having been considerably modified it has been possible to observe the phase contrast of amorphous or crystalline objects [fr

  15. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  16. Structures of high and low density amorphous ice by neutron diffraction

    International Nuclear Information System (INIS)

    Finney, J.L.; Hallbrucker, A.; Kohl, I.; Soper, A.K.; Bowron, D.T.

    2002-01-01

    Neutron diffraction with isotope substitution is used to determine the structures of high (HDA) and low (LDA) density amorphous ice. Both 'phases' are fully hydrogen bonded, tetrahedral networks, with local order similarities between LDA and ice Ih, and HDA and liquid water. Moving from HDA, through liquid water and LDA to ice Ih, the second shell radial order increases at the expense of spatial order. This is linked to a fifth first neighbor 'interstitial' that restricts the orientations of first shell waters. This 'lynch pin' molecule which keeps the HDA structure intact has implications for the nature of the HDA-LDA transition that bear on the current metastable water debate

  17. Amorphous intergranular films in silicon nitride ceramics quenched from high temperatures

    International Nuclear Information System (INIS)

    Cinibulk, M.K.; Kleebe, H.; Schneider, G.A.; Ruehle, M.

    1993-01-01

    High-temperature microstructure of an MgO-hot-pressed Si 3 N 4 and a Yb 2 O 3 + Al 2 O 3 -sintered/annealed Si 3 N 4 were obtained by quenching thin specimens from temperatures between 1,350 and 1,550 C. Quenching materials from 1,350 C produced no observable exchanges in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼1,450 C also showed no significant changes in the general microstructure or morphology of the Si 3 N 4 grains, the amorphous intergranular film thickness increased substantially from an initial ∼1 nm in the slowly cooled material to 1.5--9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1,550 C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching

  18. ACBC to Balcite: Bioinspired Synthesis of a Highly Substituted High-Temperature Phase from an Amorphous Precursor

    Energy Technology Data Exchange (ETDEWEB)

    Whittaker, Michael L.; Joester, Derk (NWU)

    2017-04-28

    Energy-efficient synthesis of materials locked in compositional and structural states far from equilibrium remains a challenging goal, yet biomineralizing organisms routinely assemble such materials with sophisticated designs and advanced functional properties, often using amorphous precursors. However, incorporation of organics limits the useful temperature range of these materials. Herein, the bioinspired synthesis of a highly supersaturated calcite (Ca0.5Ba0.5CO3) called balcite is reported, at mild conditions and using an amorphous calcium–barium carbonate (ACBC) (Ca1- x Ba x CO3·1.2H2O) precursor. Balcite not only contains 50 times more barium than the solubility limit in calcite but also displays the rotational disorder on carbonate sites that is typical for high-temperature calcite. It is significantly harder (30%) and less stiff than calcite, and retains these properties after heating to elevated temperatures. Analysis of balcite local order suggests that it may require the formation of the ACBC precursor and could therefore be an example of nonclassical nucleation. These findings demonstrate that amorphous precursor pathways are powerfully enabling and provide unprecedented access to materials far from equilibrium, including high-temperature modifications by room-temperature synthesis.

  19. Pseudocapacitance of amorphous TiO2@nitrogen doped graphene composite for high rate lithium storage

    International Nuclear Information System (INIS)

    Li, Sheng; Xue, Pan; Lai, Chao; Qiu, Jingxia; Ling, Min; Zhang, Shanqing

    2015-01-01

    The high rate applications such as electric vehicles of the traditional lithium ion batteries (LIBs) are commonly limited by their insufficient electron conductivity and slow mass transport of lithium ions in bulk electrode materials. In order to address these issues, in this work, a simple and up-scalable wet-mechanochemical (wet-ball milling) route has been developed for fabrication of amorphous porous TiO 2 @nitrogen doped graphene (TiO 2 @N-G) nanocomposites. The amorphous phase, unique porous structure of TiO 2 and the surface defects from nitrogen doping to graphene planes have incurred surface controlled reactions, contributing pseudocapacitance to the total capacity of the battery. It plays a dominant role in producing outstanding high rate electrochemical performance, e.g., 182.7 mAh/g (at 3.36 A/g) after 100 cycles. The design and synthesis of electrode materials with enhanced conductivity and surface pseudocapacitance can be a promising way for high rate LIBs.

  20. Low Li+ Insertion Barrier Carbon for High Energy Efficient Lithium-Ion Capacitor.

    Science.gov (United States)

    Lee, Wee Siang Vincent; Huang, Xiaolei; Tan, Teck Leong; Xue, Jun Min

    2018-01-17

    Lithium-ion capacitor (LIC) is an attractive energy-storage device (ESD) that promises high energy density at moderate power density. However, the key challenge in its design is the low energy efficient negative electrode, which barred the realization of such research system in fulfilling the current ESD technological inadequacy due to its poor overall energy efficiency. Large voltage hysteresis is the main issue behind high energy density alloying/conversion-type materials, which reduces the electrode energy efficiency. Insertion-type material though averted in most research due to the low capacity remains to be highly favorable in commercial application due to its lower voltage hysteresis. To further reduce voltage hysteresis and increase capacity, amorphous carbon with wider interlayer spacing has been demonstrated in the simulation result to significantly reduce Li + insertion barrier. Hence, by employing such amorphous carbon, together with disordered carbon positive electrode, a high energy efficient LIC with round-trip energy efficiency of 84.3% with a maximum energy density of 133 Wh kg -1 at low power density of 210 W kg -1 can be achieved.

  1. Nanoplasmonically Engineered Interfaces on Amorphous TiO2 for Highly Efficient Photocatalysis in Hydrogen Evolution.

    Science.gov (United States)

    Liang, Huijun; Meng, Qiuxia; Wang, Xiaobing; Zhang, Hucheng; Wang, Jianji

    2018-04-25

    The nanoplasmonic metal-driven photocatalytic activity depends heavily on the spacing between metal nanoparticles (NPs) and semiconductors, and this work shows that ethylene glycol (EG) is an ideal candidate for interface spacer. Controlling the synthetic systems at pH 3, the composite of Ag NPs with EG-stabilized amorphous TiO 2 (Ag/TiO 2 -3) was synthesized by the facile light-induced reduction. It is verified that EG spacers can set up suitable geometric arrangement in the composite: the twin hydroxyls act as stabilizers to bind Ag NPs and TiO 2 together and the nonconductive alkyl chains consisting only of two CH 2 are able to separate the two building blocks completely and also provide the shortest channels for an efficient transfer of radiation energies to reach TiO 2 . Employed as photocatalysts in hydrogen evolution under visible light, amorphous TiO 2 hardly exhibits the catalytic activity due to high defect density, whereas Ag/TiO 2 -3 represents a remarkably high catalytic efficiency. The enhancement mechanism of the reaction rate is proposed by the analysis of the compositional, structural, and optical properties from a series of Ag/TiO 2 composites.

  2. Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

    Science.gov (United States)

    Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

    2018-07-01

    Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

  3. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  4. Fe-based bulk amorphous alloys with iron contents as high as 82 at%

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jin-Feng; Liu, Xue; Zhao, Shao-Fan; Ding, Hong-Yu [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Yao, Ke-Fu, E-mail: kfyao@tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2015-07-15

    Fe-based bulk amorphous alloys (BAAs) with high Fe contents are advantageous due to their high saturation magnetization and low cost. However, preparing Fe-based BAAs with Fe contents higher than 80 at% is difficult due to their poor glass forming abilities (GFA). In this study, an Fe{sub 81}P{sub 8.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA with a diameter of 1 mm and a saturation magnetization of 1.56 T was successfully prepared using the fluxing and copper mold casting methods. In addition, by introducing a small amount of elemental Mo to the alloy, an Fe{sub 82}Mo{sub 1}P{sub 6.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA rod with a diameter of 1 mm, a high saturation magnetization of 1.59 T, a high yield stress of 3265 MPa, and a clear plasticity of 1.3% was prepared in the same way. The cost effectiveness and good magnetic properties of these newly-developed Fe-based BAAs with Fe contents as high as 82 at% would be advantageous and promising for industrial applications. - Highlights: • Novel Fe-based BAA with no other metallic element except 81 at% Fe was prepared. • Fe-based bulk amorphous alloy (BAA) with the highest Fe content (82%) was prepared. • Very high saturation magnetization of 1.59 T has been achieved. • A new thought for designing Fe-based BAA with high Fe content was provided.

  5. Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Guohua [Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen (China); The Chinese University of Hong Kong, Shatin, Hong Kong (China); Liu, Bo [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Chengdu (China); Li, Qiran [CNRS-Universite Paris Sud UMR 8622, Institut d' Electronique Fondamentale, Orsay (France)

    2015-08-15

    Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization. (orig.)

  6. Amorphous Mn oxide-ordered mesoporous carbon hybrids as a high performance electrode material for supercapacitors.

    Science.gov (United States)

    Nam, Inho; Kim, Nam Dong; Kim, Gil-Pyo; Park, Junsu; Yi, Jongheop

    2012-07-01

    A supercapacitor has the advantages of both the conventional capacitors and the rechargeable batteries. Mn oxide is generally recognized one of the potential materials that can be used for a supercapacitor, but its low conductivity is a limiting factor for electrode materials. In this study, a hybrid of amorphous Mn oxide (AMO) and ordered mesoporous carbon (OMC) was prepared and characterized using X-ray diffraction, transmission electron microscopy, N2/77 K sorption techniques, and electrochemical analyses. The findings indicate that the electrochemical activities of Mn oxide were facilitated when it was in the hybrid state because OMC acted as a pathway for both the electrolyte ions and the electrons due to the characteristics of the ordered mesoporous structure. The ordered mesoporous structure of OMC was well maintained even after hybridization with amorphous Mn oxide. The electrochemical-activity tests revealed that the AMO/OMC hybrid had a higher specific capacitance and conductivity than pure Mn oxide. In the case where the Mn/C weight ratio was 0.75, the composite showed a high capacitance of 153 F/g, which was much higher than that for pure Mn oxide, due to the structural effects of OMC.

  7. Electronic sputtering by swift highly charged ions of nitrogen on amorphous carbon

    International Nuclear Information System (INIS)

    Caron, M.; Haranger, F.; Rothard, H.; Ban d'Etat, B.; Boduch, P.; Clouvas, A.; Potiriadis, C.; Neugebauer, R.; Jalowy, T.

    2001-01-01

    Electronic sputtering with heavy ions as a function of both electronic energy loss dE/dx and projectile charge state q was studied at the French heavy ion accelerator GANIL. Amorphous carbon (untreated, and sputter-cleaned and subsequently exposed to nitrogen) was irradiated with swift highly charged ions (Z=6-73, q=6-54, energy 6-13 MeV/u) in an ultrahigh vacuum scattering chamber. The fluence dependence of ion-induced electron yields allows to deduce a desorption cross-section σ which varies approximately as σ∼(dE/dx) 1.65 or σ∼q 3.3 for sputter-cleaned amorphous carbon exposed to nitrogen. This q dependence is close to the cubic charge dependence observed for the emission of H + secondary ions which are believed to be emitted from the very surface. However, the power law σ∼(dE/dx) 1.65 , related to the electronic energy loss gives the best empirical description. The dependence on dE/dx is close to a quadratic one thus rather pointing towards a thermal evaporation-like effect

  8. Polarized Raman spectroscopic study of relaxed high density amorphous ices under pressure.

    Science.gov (United States)

    Suzuki, Yoshiharu; Tominaga, Yasunori

    2010-10-28

    We have made high density amorphous ice (HDA) by the pressure-induced amorphization of hexagonal ice at 77 K and measured the volume change on isobaric heating in a pressure range between 0.1 and 1.5 GPa. The volume of HDA on heating below ∼0.35 GPa increases, while the volume of HDA on heating above ∼0.35 GPa decreases. The polarized OH-stretching Raman spectra of the relaxed HDAs are compared with that of the unannealed HDA. The relaxed HDAs are prepared at 0.2 GPa at 130 K and 1.5 GPa at 160 K. It is found that the relatively strong totally symmetric OH-stretching vibration mode around 3100 cm(-1) exists in the depolarized reduced Raman spectrum χ(VH)(") of the unannealed HDA and that its intensity rapidly decreases by relaxation. The χ(VH)(") profiles of the relaxed HDA are similar to those of liquid water. These results indicate that the HDA reaches a nearly equilibrium state by annealing and the intrinsic state of HDA relates to a liquid state. The pressure-volume curve of the relaxed HDA at 140 K seems to be smooth in the pressure range below 1.5 GPa.

  9. Fluxing purification and its effect on magnetic properties of high-B{sub s} FeBPSiC amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Jing [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Wang, Anding, E-mail: anding@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Yue, Shiqiang [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Kong, Fengyu [School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo 315016 (China); Qiu, Keqiang, E-mail: kqqiu@163.com [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Chang, Chuntao; Wang, Xinmin [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Liu, Chain-Tsuan, E-mail: chainliu@cityu.edu.hk [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

    2017-07-01

    Highlights: • Surface crystallization in Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was inhibited by flux purification. • Amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was made with industrial process and materials. • The ribbons exhibit high B{sub s} of 1.65 T, low H{sub c} of 2 A/m, and high μ{sub e} of 9.7 × 10{sup 3}. • High melting point inclusions trigger the surface crystallization as nuclei. - Abstract: A high-B{sub s} amorphous alloy with the base composition Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} was used to study the effects of fluxing purification on amorphous forming ability and magnetic properties of the alloy prepared with raw materials in industrialization. By using fluxing purification, the surface crystallization was suppressed and fully amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbons with a maximum thickness of 48 μm were successfully achieved by using an industrial process and materials. The amorphous ribbons made with industrial-purified alloys exhibit excellent magnetic properties, containing high-B{sub s} of 1.65 T, low H{sub c} of 2.0 A/m, and high μ{sub e} of 9.7 × 10{sup 3} at 1 kHz. Impurities in the melting alloys exist in three forms and have different effluences on magnetic properties. The surface crystallization was triggered by the impurities which exist as high melting point inclusions serving as nuclei. Thus, fluxing purification is a feasible way for industrialization of high-B{sub s} FeBPSiC amorphous alloys.

  10. Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

    Science.gov (United States)

    Xu, Kai; Hrma, Pavel; Washton, Nancy; Schweiger, Michael J.; Kruger, Albert A.

    2017-01-01

    The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min-1 to 700 °C was investigated with transmission electron microscopy, 27Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m2 g-1). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification.

  11. Diffusive dynamics during the high-to-low density transition in amorphous ice

    Science.gov (United States)

    Perakis, Fivos; Amann-Winkel, Katrin; Lehmkühler, Felix; Sprung, Michael; Mariedahl, Daniel; Sellberg, Jonas A.; Pathak, Harshad; Späh, Alexander; Cavalca, Filippo; Schlesinger, Daniel; Ricci, Alessandro; Jain, Avni; Massani, Bernhard; Aubree, Flora; Benmore, Chris J.; Loerting, Thomas; Grübel, Gerhard; Pettersson, Lars G. M.; Nilsson, Anders

    2017-08-01

    Water exists in high- and low-density amorphous ice forms (HDA and LDA), which could correspond to the glassy states of high- (HDL) and low-density liquid (LDL) in the metastable part of the phase diagram. However, the nature of both the glass transition and the high-to-low-density transition are debated and new experimental evidence is needed. Here we combine wide-angle X-ray scattering (WAXS) with X-ray photon-correlation spectroscopy (XPCS) in the small-angle X-ray scattering (SAXS) geometry to probe both the structural and dynamical properties during the high-to-low-density transition in amorphous ice at 1 bar. By analyzing the structure factor and the radial distribution function, the coexistence of two structurally distinct domains is observed at T = 125 K. XPCS probes the dynamics in momentum space, which in the SAXS geometry reflects structural relaxation on the nanometer length scale. The dynamics of HDA are characterized by a slow component with a large time constant, arising from viscoelastic relaxation and stress release from nanometer-sized heterogeneities. Above 110 K a faster, strongly temperature-dependent component appears, with momentum transfer dependence pointing toward nanoscale diffusion. This dynamical component slows down after transition into the low-density form at 130 K, but remains diffusive. The diffusive character of both the high- and low-density forms is discussed among different interpretations and the results are most consistent with the hypothesis of a liquid-liquid transition in the ultraviscous regime.

  12. Highly conductive p-type amorphous oxides from low-temperature solution processing

    International Nuclear Information System (INIS)

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-01-01

    We report solution-processed, highly conductive (resistivity 1.3-3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E VBM = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  13. Stabilization of iron and molybdenum amorphous state with interstitials under high rates of cooling

    International Nuclear Information System (INIS)

    Barmin, Yu.V.; Vavilova, V.V.; Verevkin, A.G.; Gertsen, A.T.; Kovneristyj, Yu.K.; Kotyurgin, E.A.; Mirkin, B.V.; Palij, N.A.

    1993-01-01

    Amorphous solidification of iron and molybdenum is investigated in thin films and on surface laser irradiated on air at 10 12 and 10 8 /Ks cooling rates correspondingly. Amorphous solidification occurs during ion plasma spraying in thin films of 50 nm at saturation of carbon and oxygen atoms in the ratio of C:0=2.3, but amorphous state is absent at room temperature. Metastable fcc phase, among bcc, is formed by crystallization

  14. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    International Nuclear Information System (INIS)

    Kalay, Yunus Eren

    2008-01-01

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T 0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T 0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 (micro)m with a Peclet number of ∼0.2, JH and TMK deviate from each other. This

  15. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kalay, Yunus Eren [Iowa State Univ., Ames, IA (United States)

    2009-01-01

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of ~0.2, JH and TMK deviate from

  16. High-field magnetization behavior in random anisotropy amorphous Co-Er alloys

    Science.gov (United States)

    Lassri, H.; Driouch, L.; Krishnan, R.

    1994-05-01

    Amorphous Co1-xErx ribbons with x=55 and 65 were prepared by the melt-spinning technique. Magnetization measurements were carried out in the temperature range 4-100 K under high magnetic fields up to 20 T. Even at 20 T the saturation is not fully attained. Assuming that Co has no moment in the alloy with x=65 the Er moment is found to be 7.0μB which indicates a speromagnetic spin structure. The Co moment in the alloy with x=55 is then found to be 0.1μB, which is negligibly small. By analyzing the approach to saturation using Chudnovsky's theory we have extracted some fundamental parameters.

  17. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Directory of Open Access Journals (Sweden)

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  18. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  19. Communication: Disorder-suppressed vibrational relaxation in vapor-deposited high-density amorphous ice

    Science.gov (United States)

    Shalit, Andrey; Perakis, Fivos; Hamm, Peter

    2014-04-01

    We apply two-dimensional infrared spectroscopy to differentiate between the two polyamorphous forms of glassy water, low-density (LDA) and high-density (HDA) amorphous ices, that were obtained by slow vapor deposition at 80 and 11 K, respectively. Both the vibrational lifetime and the bandwidth of the 1-2 transition of the isolated OD stretch vibration of HDO in H2O exhibit characteristic differences when comparing hexagonal (Ih), LDA, and HDA ices, which we attribute to the different local structures - in particular the presence of interstitial waters in HDA ice - that cause different delocalization lengths of intermolecular phonon degrees of freedom. Moreover, temperature dependent measurements show that the vibrational lifetime closely follows the structural transition between HDA and LDA phases.

  20. High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals

    International Nuclear Information System (INIS)

    Inui, H.; Mori, H.; Sakata, T.

    1992-01-01

    An electron-irradiation-induced crystalline-to-amorphous (CA) transition in α-SiC has been studied by high-resolution electron microscopy (HREM). The irradiation-produced damage structure was examined as a function of dose of electrons by taking high-resolution maps extending from the unirradiated crystalline region to the completely amorphized region. In the intermediate region between those two regions, that is in the CA transition region, the damage structure was essentially a mixture of crystalline and amorphous phases. The volume fraction of the amorphous phase was found to increase with increasing dose of electrons and no discrete crystalline-amorphous interface was observed in the CA transition region. These facts indicate the heterogeneous and gradual nature of the CA transition. In the transition region close to the unirradiated crystalline region, a sort of fragmentation of the crystal lattice was observed to occur, crystallites with slightly different orientations with respect to the parent crystal were formed owing to the strain around the dispersed local amorphous regions. In the transition region close to the amorphized region, these crystallites were reduced in size and were embedded in an amorphous matrix. This damage structure is the result of the increased volume fraction of the amorphous phase. In the completely amorphized region, no lattice fringes were recognized in the HREM images. The atomistic process of the CA transition is discussed on the basis of the present results and those from previous studies. (Author)

  1. Potential Energy Landscape of the Liquid-Liquid Phase Transition in Water and the transformation between Low-Density and High-Density Amorphous Ice

    Science.gov (United States)

    Giovambattista, N.; Sciortino, F.; Starr, F. W.; Poole, P. H.

    The potential energy landscape (PEL) formalism is a valuable approach within statistical mechanics for describing supercooled liquids and glasses. We use the PEL formalism and computer simulations to study the transformation between low-density (LDL) and high-density liquid (HDL) water, and between low-density (LDA) and high-density amorphous ice (HDA). We employ the ST2 water model that exhibits a LDL-HDL first-order phase transition and a sharp LDA-HDA transformation, as observed in experiments. Our results are consistent with the view that LDA and HDA configurations are associated with two distinct regions (megabasins) of the PEL that are separated by a potential energy barrier. At higher temperature, we find that LDL configurations are located in the same megabasin as LDA, and that HDL configurations are located in the same megabasin as HDA. We show that the pressure-induced LDL-HDL and LDA-HDA transformations occur along paths that interconnect these two megabasins, but that the path followed by the liquid and the amorphous ice differ. We also study the liquid-to-ice-VII first-order phase transition. The PEL properties across this transition are qualitatively similar to the changes found during the LDA-HDA transformation, supporting the interpretation that the LDA-HDA transformation is a first-order-like phase transition between out-of-equilibrium states.

  2. Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Kai, E-mail: kaixu@whut.edu.cn [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Hrma, Pavel, E-mail: pavel.hrma@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Washton, Nancy; Schweiger, Michael J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Kruger, Albert A. [U.S. Department of Energy, Office of River Protection, Richland, WA 99352 (United States)

    2017-01-15

    The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min{sup −1} to 700 °C was investigated with transmission electron microscopy, {sup 27}Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m{sup 2} g{sup −1}). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification. - Highlights: • Porous amorphous alumina formed in a simulated high-Al HLW melter feed during heating. • The feed had a high specific surface area at 300 °C ≤ T ≤ 500 °C. • Porous amorphous alumina induced increased specific surface area.

  3. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  4. Growth Mechanism and Origin of High s p3 Content in Tetrahedral Amorphous Carbon

    Science.gov (United States)

    Caro, Miguel A.; Deringer, Volker L.; Koskinen, Jari; Laurila, Tomi; Csányi, Gábor

    2018-04-01

    We study the deposition of tetrahedral amorphous carbon (ta-C) films from molecular dynamics simulations based on a machine-learned interatomic potential trained from density-functional theory data. For the first time, the high s p3 fractions in excess of 85% observed experimentally are reproduced by means of computational simulation, and the deposition energy dependence of the film's characteristics is also accurately described. High confidence in the potential and direct access to the atomic interactions allow us to infer the microscopic growth mechanism in this material. While the widespread view is that ta-C grows by "subplantation," we show that the so-called "peening" model is actually the dominant mechanism responsible for the high s p3 content. We show that pressure waves lead to bond rearrangement away from the impact site of the incident ion, and high s p3 fractions arise from a delicate balance of transitions between three- and fourfold coordinated carbon atoms. These results open the door for a microscopic understanding of carbon nanostructure formation with an unprecedented level of predictive power.

  5. Relaxation processes during amorphous metal alloys heating

    International Nuclear Information System (INIS)

    Malinochka, E.Ya.; Durachenko, A.M.; Borisov, V.T.

    1982-01-01

    Behaviour of Te+15 at.%Ge and Fe+13 at.%P+7 at.%C amorphous metal alloys during heating has been studied using the method of differential scanning calorimetry (DSC) as the most convenient one for determination of the value of heat effects, activation energies, temperature ranges of relaxation processes. Thermal effects corresponding to high-temperature relaxation processes taking place during amorphous metal alloys (AMA) heating are detected. The change of ratio of relaxation peaks values on DSC curves as a result of AMA heat treatment can be explained by the presence of a number of levels of inner energy in amorphous system, separated with potential barriers, the heights of which correspond to certain activation energies of relaxation processes

  6. High transmittance contrast in amorphous to hexagonal phase of Ge2Sb2Te5: Reversible NIR-window

    Science.gov (United States)

    Singh, Palwinder; Singh, A. P.; Kanda, Neetu; Mishra, Monu; Gupta, Govind; Thakur, Anup

    2017-12-01

    Ge2Sb2Te5 (GST) is one of the best phase change materials because of its splendid set of properties, viz., high thermal stability, fast crystallization speed, good endurance, scalability, and reliability. Phase transition [amorphous → face centered cubic (fcc) → hexagonal close packed (hcp)] of GST thin films with annealing was studied using X-ray diffraction. Thin films in amorphous, fcc, and hcp phases are highly, medium, and negligible transparent in the near infra-red region, respectively. The optical transmission in amorphous, fcc, and hcp phases is ˜92%, ˜46%, and ˜2%, respectively, at the wavelength of 2740 nm. At 2740 nm, a high transmission contrast (˜90%) is observed with phase transition from the amorphous to hcp phase. By utilizing large transmission contrast, it is demonstrated that GST can be availed as a potential candidate for reversible near infra-red-window. The sharp change in optical transmission with phase transition can be understood from the change in density of states in the valence band.

  7. Dynamics anomaly in high-density amorphous ice between 0.7 and 1.1 GPa

    Science.gov (United States)

    Handle, Philip H.; Loerting, Thomas

    2016-02-01

    We studied high-density amorphous ices between 0.004 and 1.6 GPa by isobaric in situ volumetry and by subsequent ex situ x-ray diffraction and differential scanning calorimetry at 1 bar. Our observations indicate two processes, namely, relaxation in the amorphous matrix and crystallization, taking place at well-separated time scales. For this reason, we are able to report rate constants of crystallization kX and glass-transition temperatures Tg in an unprecedented pressure range. Tg's agree within ±3 K with earlier work in the small pressure range where there is overlap. Both Tg and kX show a pressure anomaly between 0.7 and 1.1 GPa, namely, a kX minimum and a Tg maximum. This anomalous pressure dependence suggests a continuous phase transition from high- (HDA) to very-high-density amorphous ice (VHDA) and faster hydrogen bond dynamics in VHDA. We speculate this phenomenology can be rationalized by invoking the crossing of a Widom line between 0.7 and 1.1 GPa emanating from a low-lying HDA-VHDA critical point. Furthermore, we interpret the volumetric relaxation of the amorphous matrix to be accompanied by viscosity change to explain the findings such that the liquid state can be accessed prior to the crystallization temperature TX at 0.8 GPa.

  8. High speed cinematography of cracks spreading under failure of amorphous metallic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V. [AN Ukrainskoj SSR, Kharkov (Ukraine). Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur; Shibkov, A.A.

    1997-08-01

    The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.). 4 refs.

  9. High speed cinematography of cracks spreading under failure of amorphous metallic alloys

    International Nuclear Information System (INIS)

    Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V.; Shibkov, A.A.

    1997-01-01

    The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.)

  10. Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jilin [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Gu, Yunle [School of Material Science and Engineering, Wuhan Institute of Technology, Wuhan 430073 (China); Li, Zili [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Wang, Weimin, E-mail: wangwm@hotmail.com [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Fu, Zhengyi [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

    2013-06-01

    Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH{sub 4} played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B{sub 2}O{sub 3} and KBH{sub 4} as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH{sub 4} played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed.

  11. Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

    International Nuclear Information System (INIS)

    Wang, Jilin; Gu, Yunle; Li, Zili; Wang, Weimin; Fu, Zhengyi

    2013-01-01

    Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH 4 played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B 2 O 3 and KBH 4 as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH 4 played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed

  12. Amorphous nickel/cobalt tungsten sulfide electrocatalysts for high-efficiency hydrogen evolution reaction

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lun [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Xinglong, E-mail: hkxlwu@nju.edu.cn [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Department of Physics, NingBo University, NingBo 315001 (China); Zhu, Xiaoshu [Center for Analysis and Testing, Nanjing Normal University, Nanjing 210093 (China); He, Chengyu; Meng, Ming; Gan, Zhixing [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

    2015-06-30

    Graphical abstract: - Highlights: • Amorphous nickel/cobalt tungsten sulfides were synthesized by a thermolytic process. • Amorphous NiWS and CoWS could realize hydrogen evolution efficiently. • Ni/Co promotion and annealing alter the porous structure and chemical bonding states. • Active sites on the surface of amorphous WS{sub x} are increased with Ni or Co doping. • Amorphous NiWS and CoWS have immense potentials in water splitting devices. - Abstract: The hydrogen evolution reaction (HER), an appealing solution for future energy supply, requires efficient and inexpensive electrocatalysts with abundant active surface sites. Although crystalline MoS{sub 2} and WS{sub 2} are promising candidates, their activity is dominated by edge sites. Amorphous tungsten sulfide prepared so far lacks the required active sites and its application has thus been hampered. In this work, nickel and cobalt incorporated amorphous tungsten sulfide synthesized by a thermolytic process is demonstrated to enhance the HER efficiency dramatically. The amorphous nickel tungsten sulfide (amorphous NiWS) annealed at 210 °C delivers the best HER performance in this system boasting a Tafel slope of 55 mV per decade and current density of 8.6 mA cm{sup −2} at 250 mV overpotential in a sustained test for 24 h. The introduction of Ni or Co into the catalyst and subsequent thermal treatment alters the porous structure and chemical bonding states thereby increasing the density of active sites on the surface.

  13. High density amorphous ice and its phase transition to ice XII

    International Nuclear Information System (INIS)

    Kohl, I.

    2001-07-01

    1998 Lobban et al. reported the neutron diffraction data of a new phase of ice, called ice XII, which formed at 260 K on compression of water within the domain of ice V at a pressure of 0.5 GPa. Surprisingly ice XII forms as an incidental product in the preparation of high-density amorphous ice (HDA) on compression of hexagonale ice (ice Ih) at 77 K up to pressures = 1.3 GPa. A decisive experimental detail is the use of an indium container: when compressing ice Ih in a pressure vessel with indium linings, then reproducibly HDA (high density amorphous ice) forms, but without indium randomly scattered relative amounts of ice XII and HDA form. Ice XII forms on compression of ice Ih at 77 K only via HDA, and not directly from ice Ih. Its formation requires a sudden pronounced apparent pressure drop of ca 0.18 GPa at pressures ca 1.1 GPa. These apparent pressure drops can be caused by buildup friction between the piston and the pressure vessel and its sudden release on further compression. I propose that shock-waves generated by apparent pressure drops cause transient local heating and that this induces nucleation and crystal growth. A specific reproducible method to prepare ice XII is heating HDA in a pressure vessel with indium linings at constant pressures (or constant volume). The ice XII (meta-)stability domain extends between ca 158 and 212 K from ca 0.7 to ca 1.5 GPa. DSC (differential scanning calorimetry) and x-ray powder diffraction revealed, that on heating at atmospheric pressure ice XII transforms directly into cubic ice (ice Ic) at 154 K (heating rate 10 K min - 1) and not into an amorphous form before transition to ice Ic. The enthalpy of the ice XII - ice Ic transition is -1.21 ± 0.07 kJ mol -1 . An estimation of the Gibbs free energy at atmospheric pressure and about 140 K results that ice XII is thermodynamically more stable than ice VI. In the heating curve of ice XII a reversible endothermic step can be found at the onset temperature (heating rate

  14. Structure and gas-barrier properties of amorphous hydrogenated carbon films deposited on inner walls of cylindrical polyethylene terephthalate by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Tian Xiubo; Yang Shiqin; Fu, Ricky K.Y.; Chu, Paul K.

    2009-01-01

    The influence of radio-frequency (RF) power on the structure and gas permeation through amorphous hydrogenated carbon films deposited on cylindrical polyethylene terephthalate (PET) samples is investigated. The results show that a higher radio-frequency power leads to a smaller sp 3 /sp 2 value but produces fewer defects with smaller size. The permeability of PET samples decreases significantly after a-C:H deposition and the RF only exerts a small influence. However, the coating uniformity, color, and wettability of the surface are affected by the RF power. A higher RF power results in to better uniformity and it may be attributed to the combination of the high-density plasma and sample heating.

  15. Effect of Co content on structure and magnetic behaviors of high induction Fe-based amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Rajat K., E-mail: rajat@nmlindia.org; Panda, Ashis K.; Mitra, Amitava

    2016-11-15

    The replacement of Fe with Co is investigated in the (Fe{sub 1−x}Co{sub x}){sub 79}Si{sub 8.5}B{sub 8.5}Nb{sub 3}Cu{sub 1} (x=0, 0.05, 0.2, 0.35, 0.5) amorphous alloys. The alloys are synthesized in the forms of ribbons by single roller melt spinning technique, and the structural and magnetic properties of annealed ribbons are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM), B–H curve tracer, respectively. All as-cast alloys are structurally amorphous, however, their magnetic properties are varying with Co addition. The Co addition within 5–20 at% results in moderate thermal stability, saturation induction, Curie temperature and lowest coercivity, while 35 at% Co causes highest saturation induction, coercivity, Curie temperature and lowest thermal stability. On devitrification, the magnetic properties change with the generation of α-FeCo nanocrystallites and (FeCo){sub 23}B{sub 6}, Fe{sub 2}B phases during primary and secondary crystallization stages, respectively. A small amount Co is advantageous for maintaining finer nanocrystallites in amorphous matrix even after annealing at 600 °C, leading to high saturation magnetization (>1.5 T) and low coercivity (~35 A/m). The improved magnetic properties at elevated temperatures indicate these alloys have a potential for high frequency transformer core applications. - Highlights: • The structural and magnetic behaviors of Fe based amorphous alloys have been investigated with the effect of Co content. • The Co has no adverse effect on amorphization of alloys. • A small amount Co causes the superior improvement of magnetic properties at elevated temperatures. • Therefore, it is important not only for academic research but also for industrial applied research.

  16. Amorphous silica in ultra-high performance concrete: First hour of hydration

    Energy Technology Data Exchange (ETDEWEB)

    Oertel, Tina, E-mail: tina.oertel@isc.fraunhofer.de [Fraunhofer-Institute for Silicate Research ISC, Neunerplatz 2, 97082 Würzburg (Germany); Chair for Inorganic Chemistry I, Universität Bayreuth, Universitätsstr. 30, 95440 Bayreuth (Germany); Hutter, Frank [Fraunhofer-Institute for Silicate Research ISC, Neunerplatz 2, 97082 Würzburg (Germany); Helbig, Uta, E-mail: uta.helbig@th-nuernberg.de [Chair for Crystallography and X-ray Methods, Technische Hochschule Nürnberg Georg Simon Ohm, Wassertorstraße 10, 90489 Nürnberg (Germany); Sextl, Gerhard [Fraunhofer-Institute for Silicate Research ISC, Neunerplatz 2, 97082 Würzburg (Germany); Chair for Chemical Technology of Advanced Materials, Julius Maximilian Universität, Röntgenring 11, 97070 Würzburg (Germany)

    2014-04-01

    Amorphous silica in the sub-micrometer size range is widely used to accelerate cement hydration. Investigations including properties of silica which differ from the specific surface area are rare. In this study, the reactivity of varying types of silica was evaluated based on their specific surface area, surface silanol group density, content of silanol groups and solubility in an alkaline suspension. Pyrogenic silica, silica fume and silica synthesized by hydrolysis and condensation of alkoxy silanes, so-called Stoeber particles, were employed. Influences of the silica within the first hour were further examined in pastes with water/cement ratios of 0.23 using in-situ X-ray diffraction, cryo scanning electron microscopy and pore solution analysis. It was shown that Stoeber particles change the composition of the pore solution. Na{sup +}, K{sup +}, Ca{sup 2+} and silicate ions seem to react to oligomers. The extent of this reaction might be highest for Stoeber particles due to their high reactivity.

  17. Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

    International Nuclear Information System (INIS)

    He Ming; Ishihara, Ryoichi; Metselaar, Wim; Beenakker, Kees

    2007-01-01

    In this paper, agglomeration phenomena of amorphous Si (α-Si) films due to high energy density excimer laser irradiation are systematically investigated. The agglomeration, which creates holes or breaks the continuous Si film up into spherical beads, is a type of serious damage. Therefore, it determines an upper energy limit for excimer laser crystallization. It is speculated that the agglomeration is caused by the boiling of molten Si. During this process, outbursts of heterogeneously nucleated vapor bubbles are promoted by the poor wetting property of molten silicon on the SiO 2 layer underneath. The onset of the agglomeration is defined by extrapolating the hole density as a function of the energy density of the laser pulse. A SiO 2 capping layer (CL) is introduced on top of the α-Si film to investigate its influence on the agglomeration. It is found that effects of the CL depend on its thickness. The CL with a thickness less than 300 nm can be used to suppress the agglomeration. A thin CL acts as a confining layer and puts a constraint on bubble burst, and hence suppresses the agglomeration

  18. Application of diffusion barriers to high modulus fibers

    Science.gov (United States)

    Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

    1977-01-01

    Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

  19. Feasibility study of hydrogenated amorphous alloys as high-damping materials

    International Nuclear Information System (INIS)

    Mizubayashi, H.; Ishikawa, Y.; Tanimoto, H.

    2004-01-01

    The hydrogen internal friction peak (HIFP) and the tensile strength, σ f , in amorphous (denoted by 'a') Zr 60-y Cu 30 Al 10 Si y (y=0, 1) and a-Zr 40 Cu 50-x Al 10 Si x (x=0, 1) alloys are investigated as a function of the hydrogen concentration, C H . The drastic increase in the peak temperature, T p , of the HIFP due to the Si addition by 1 at.% is found for the a-Zr 40 Cu 49 Al 10 Si 1 , where the decrease in 1/τ 0 (τ 0 denotes the pre-exponential factor of the relaxation time for the HIFP) from 1.5x10 12 s -1 to 3.0x10 10 s -1 is observed. On the other hand, the increase in T p due to the Si addition by 1 at.% is much smaller for a-Zr 59 Cu 30 Al 10 Si 1 , where 1/τ 0 for the HIFP in a-Zr 60 Cu 30 Al 10 is already as low as that for a- Zr 40 Cu 49 Al 10 Si 1 . For the HIFP with the peak height, Q p -1 , beyond 1x10 -2 , Q p -1 in the as-charged state decreases after heating to about 380 K because of the hydrogen induced structural relaxation (HISR). The HIFP with Q p -1 below 1x10 -2 is rather stable against the HISR. It is suggested that the highly anisotropic local strain around a hydrogen atom is responsible for the very high Q p -1 and the HISR. For the high-strength and high-damping performance, σ f is higher than 1.5 GPa and Q p -1 after the HISR is slightly lower than 1x10 -2 for the present Zr-Cu-Al-(Si) a-alloys

  20. Permeability change with dissolution and precipitation reaction induced by highly alkaline plume in packed bed with amorphous silica particles

    International Nuclear Information System (INIS)

    Komatsu, Kyo; Kadowaki, Junichi; Niibori, Yuichi; Mimura, Hitoshi; Usui, Hideo

    2008-01-01

    A large amount of cement is used to construct of the geological disposal system. Such a material alters the pH of groundwater to highly alkaline region. The highly alkaline plume contains rich Ca ion compared to the surrounding environment, and the Ca ion reacts with soluble silicic acid. Its product would deposit on the surface of flow-paths in the natural barrier and decrease the permeability. In this study, the influence of Ca ions in highly alkaline plume on flow-paths has been examined by using packed bed column. The column was packed with the amorphous silica particles of 75-150 μm in diameter. The Ca(OH) 2 solution (0.78 mM, 2.58 mM, 4.37 mM, and 8.48 mM, pH: 12.2-12.4) was continuously injected into the column at a constant flow rate (5 ml/min, and 2 ml/min), and the change of permeability was monitored. At the same time, the concentrations of [Ca] total and [Si] in the eluted solution were measured by the inductively coupled plasma atomic emission spectrometry (ICP-AES). The Ca(OH) 2 solutions were prepared with CO 2 -free pure water, and filtrated through 0.45 μm filter. The permeability was normalized by the initial permeability value. In the experiment results, the permeability dramatically changed with increasing Ca concentration, because Ca ions and H 4 SiO 4 (due to the dissolution of SiO 2 ) produce C-S-H gel between the packed particles in the column. The SEM images and XRD analyses showed that the surface of SiO 2 particles was covered with the C-S-H gel precipitation. On the other hand, when the Ca concentration was relatively low, the permeability did not show remarkable change. For the cross section of SiO 2 particles, EPMA analysis suggested the consumption of Ca in the inner pore of the SiO 2 particles. However, the time-change in the concentrations of Si and Ca was not always simple. Such time-change strongly depended not only on pH or Ca concentration, but also on the flow rates. This suggested that mass transport controls the chemical

  1. Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

    International Nuclear Information System (INIS)

    Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

    2001-01-01

    Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

  2. Calculation of core loss and copper loss in amorphous/nanocrystalline core-based high-frequency transformer

    Directory of Open Access Journals (Sweden)

    Xiaojing Liu

    2016-05-01

    Full Text Available Amorphous and nanocrystalline alloys are now widely used for the cores of high-frequency transformers, and Litz-wire is commonly used as the windings, while it is difficult to calculate the resistance accurately. In order to design a high-frequency transformer, it is important to accurately calculate the core loss and copper loss. To calculate the core loss accurately, the additional core loss by the effect of end stripe should be considered. It is difficult to simulate the whole stripes in the core due to the limit of computation, so a scale down model with 5 stripes of amorphous alloy is simulated by the 2D finite element method (FEM. An analytical model is presented to calculate the copper loss in the Litz-wire, and the results are compared with the calculations by FEM.

  3. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  4. Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

    Science.gov (United States)

    Morishita, Tetsuya

    2009-05-21

    We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

  5. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    Energy Technology Data Exchange (ETDEWEB)

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  6. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    Science.gov (United States)

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Jing, T.; Lawrence Berkeley Lab., CA

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  8. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  9. High-speed magnetization reversal near the compensation temperature of amorphous GdTbFe

    International Nuclear Information System (INIS)

    Aeschlimann, M.; Vaterlaus, A.; Lutz, M.; Stampanoni, M.; Meier, F.; Siegmann, H.C.; Klahn, S.; Hansen, P.

    1991-01-01

    Using spin-polarized photoemission with a pulsed laser as light source, it is shown that the time for a thermally induced magnetization reversal depends critically on the temperature of the sample. For amorphous GdTbFe the time is shorter (longer) than the duration of the 16 ns laser pulses if the initial temperature is below (above) the compensation temperature

  10. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Morales-Masis, M.; de Nicolas, S.M.; Holovský, Jakub; De Wolf, S.; Ballif, C.

    2015-01-01

    Roč. 5, č. 5 (2015), s. 1340-1347 ISSN 2156-3381 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : solar cells * amorphous * ITO * TCO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2015

  11. Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

    DEFF Research Database (Denmark)

    Singh, Shailendra Vikram; Zaharia, T.; Creatore, M.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) deposited from an Ar-C 2H2 expanding thermal plasma chemical vapor deposition (ETP-CVD) is reported. The downstream plasma region of an ETP is characterized by a low electron temperature (∼0.3 eV), which leads to an ion driven chemistry and negligible physical...

  12. Identifying low and high density amorphous phases during zeolite amorphisation using small and wide angle X-ray scattering

    International Nuclear Information System (INIS)

    Meneau, F.; Greaves, G.N.

    2005-01-01

    In situ experiments following the thermal amorphisation of zeolites reveal massive increases in small angle X-ray scattering (SAXS), persisting well beyond the stage where wide angle X-ray scattering (WAXS) can detect that any crystalline phase is present. This heterogeneity in the amorphised phase is attributed to the transition from a low density amorphous phase (LDA) to a high density amorphous phase (HDA) at the glass transition. The fractions of zeolite, LDA and HDA phases obtained from SAXS analysis are discussed in the context of non-linear changes detected in 29 Si solid state NMR during zeolite amorphisation. Whilst the HDA phase is chemically disordered, the LDA phase exhibits much of the Al-Si ordering present in the starting zeolite. These findings are considered in the context of perfect glasses predicted to occur when super strong liquids are supercooled

  13. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  14. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  15. Improving Reversible Capacities of High-Surface Lithium Insertion Materials – The Case of Amorphous TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ganapathy, Swapna [Fundamental Aspects of Materials and Energy, Department of Radiation, Radionucleides and Reactors, Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands); Basak, Shibabrata [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Lefering, Anton; Rogers, Edith [Fundamental Aspects of Materials and Energy, Department of Radiation, Radionucleides and Reactors, Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands); Zandbergen, Henny W. [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Wagemaker, Marnix, E-mail: m.wagemaker@tudelft.nl [Fundamental Aspects of Materials and Energy, Department of Radiation, Radionucleides and Reactors, Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands)

    2014-11-28

    Chemisorbed water and solvent molecules and their reactivity with components from the electrolyte in high-surface nano-structured electrodes remains a contributing factor toward capacity diminishment on cycling in lithium ion batteries due to the limit in maximum annealing temperature. Here, we report a marked improvement in the capacity retention of amorphous TiO{sub 2} by the choice of preparation solvent, control of annealing temperature, and the presence of surface functional groups. Careful heating of the amorphous TiO{sub 2} sample prepared in acetone under vacuum lead to complete removal of all molecular solvent and an improved capacity retention of 220 mAh/g over 50 cycles at a C/10 rate. Amorphous TiO{sub 2} when prepared in ethanol and heated under vacuum showed an even better capacity retention of 240 mAh/g. From Fourier transform infra-red spectroscopy and electron energy loss spectroscopy measurements, the improved capacity is attributed to the complete removal of ethanol and the presence of very small fractions of residual functional groups coordinated to oxygen-deficient surface titanium sites. These displace the more reactive chemisorbed hydroxyl groups, limiting reaction with components from the electrolyte and possibly enhancing the integrity of the solid electrolyte interface. The present research provides a facile strategy to improve the capacity retention of nano-structured electrode materials.

  16. Improving Reversible Capacities of High-Surface Lithium Insertion Materials – The Case of Amorphous TiO2

    International Nuclear Information System (INIS)

    Ganapathy, Swapna; Basak, Shibabrata; Lefering, Anton; Rogers, Edith; Zandbergen, Henny W.; Wagemaker, Marnix

    2014-01-01

    Chemisorbed water and solvent molecules and their reactivity with components from the electrolyte in high-surface nano-structured electrodes remains a contributing factor toward capacity diminishment on cycling in lithium ion batteries due to the limit in maximum annealing temperature. Here, we report a marked improvement in the capacity retention of amorphous TiO 2 by the choice of preparation solvent, control of annealing temperature, and the presence of surface functional groups. Careful heating of the amorphous TiO 2 sample prepared in acetone under vacuum lead to complete removal of all molecular solvent and an improved capacity retention of 220 mAh/g over 50 cycles at a C/10 rate. Amorphous TiO 2 when prepared in ethanol and heated under vacuum showed an even better capacity retention of 240 mAh/g. From Fourier transform infra-red spectroscopy and electron energy loss spectroscopy measurements, the improved capacity is attributed to the complete removal of ethanol and the presence of very small fractions of residual functional groups coordinated to oxygen-deficient surface titanium sites. These displace the more reactive chemisorbed hydroxyl groups, limiting reaction with components from the electrolyte and possibly enhancing the integrity of the solid electrolyte interface. The present research provides a facile strategy to improve the capacity retention of nano-structured electrode materials.

  17. High field magnetisation studies in some rare earth based amorphous ribbons

    Science.gov (United States)

    Krishnan, R.; Lassri, H.; Driouch, L.

    1995-02-01

    We have carried out magnetisation studies at fields up to 20 T of melt spun amorphous Fe 72- xY xHo 8B 20 alloys. The approach to saturation for H ≤ 11 T has been analysed on the basis of Chudnovsky's model, and the exchange constant, random anisotropy etc. have been calculated. We have also extracted the local anisotropy from the coercivity.

  18. Physical activity barriers and motivators among high-risk employees.

    Science.gov (United States)

    Paguntalan, John C; Gregoski, Mathew

    2016-11-22

    Worksite wellness programs offer an ideal setting to target high-risk sedentary workers to improve health status. Lack of physical activity is associated with increased risk for coronary heart disease and mortality. Despite the risks, the number of sedentary workers is increasing. This study examined the perceived barriers and motivators for physical activity among employees at high-risk for coronary heart disease. A purposive sample of 24 high-risk workers participating in a wellness program in rural South Carolina were enrolled in the study. Qualitative data was obtained through semi-structured face-to-face interviews. Grounded theory was used to analyze qualitative data, and identify overarching themes. Physical limitations due to pain and weakness, lack of motivation, and lack of time emerged as the main barriers to physical activity. Family relationships were reported as the strongest motivator along with social support and potential health benefits. Findings highlight the unique experience of high-risk workers with physical activity. The findingsunderscore the need to design and implement effective interventions specifically designed to meet the needs of high-risk employees.

  19. Amorphous nanophotonics

    CERN Document Server

    Scharf, Toralf

    2013-01-01

    This book represents the first comprehensive overview over amorphous nano-optical and nano-photonic systems. Nanophotonics is a burgeoning branch of optics that enables many applications by steering the mould of light on length scales smaller than the wavelength with devoted nanostructures. Amorphous nanophotonics exploits self-organization mechanisms based on bottom-up approaches to fabricate nanooptical systems. The resulting structures presented in the book are characterized by a deterministic unit cell with tailored geometries; but their spatial arrangement is not controlled. Instead of periodic, the structures appear either amorphous or random. The aim of this book is to discuss all aspects related to observable effects in amorphous nanophotonic material and aspects related to their design, fabrication, characterization and integration into applications. The book has an interdisciplinary nature with contributions from scientists in physics, chemistry and materials sciences and sheds light on the topic fr...

  20. Hollow Amorphous MnSnO3 Nanohybrid with Nitrogen-Doped Graphene for High-Performance Lithium Storage

    International Nuclear Information System (INIS)

    Liu, Peng; Hao, Qingli; Xia, Xifeng; Lei, Wu; Xia, Hui; Chen, Ziyang; Wang, Xin

    2016-01-01

    Graphical abstract: A novel hybrid of hollow amorphous MnSnO 3 nanoparticles and nitrogen-doped reduced graphene oxide was fabricated. The unique structure and well-combination of both components account for the ultra long-term cyclic life with high reversible capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . - Highlights: • Novel hybrid of MnSnO 3 and nitrogen-doped reduced graphene oxide was fabricated. • The MnSnO 3 nanoparticles possess amorphous and hollow structure in the composite. • The excellent electrochemical performance benefits from unique nanostructure. • The reversible capacity of as-prepared hybrid is 610 mAh g −1 after 1000 cycles. • A long-term life with 97.3% capacity retention over 1000 cycles was obtained. - Abstract: Tin-based metal oxides usually suffer from severe capacity fading resulting from aggregation and considerable volume variation during the charge/discharge process in lithium ion batteries. In this work, a novel nanocomposite (MTO/N-RGO) of hollow amorphous MnSnO 3 (MTO) nanoparticles and nitrogen-doped reduced graphene oxide (N-RGO) has been designed and synthesized by a two-step method. Firstly, the nitrogen-doped graphene nanocomposite (MTO/N-RGO-P) with MnSn(OH) 6 crystal nanoparticles was synthesized by a facile solvothermal method. Subsequently, the MTO/N-RGO nanocomposite was obtained through the post heat treatment of MTO/N-RGO-P. The designed heterostructure and well-combination of the hollow amorphous MTO and N-RGO matrix can accelerate the ionic and electronic transport, and simultaneously accommodate the aggregation and volume variation of MTO nanoparticles during the lithiation–delithiation cycles. The as-prepared hybrid of MTO and N-RGO (MTO/N-RGO) exhibits a high reversible capacity of 707 mAh g −1 after 110 cycles at 200 mA g −1 , superior rate capability, and long-term cyclic life with high capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . Superior capacity retention of

  1. Highly textured Nd-Fe-B films grown on amorphous substrates

    International Nuclear Information System (INIS)

    Hannemann, Ullrich; Melcher, Steffen; Faehler, Sebastian

    2004-01-01

    Thin films with an almost perfect alignment of Nd 2 Fe 14 B grains with the c-axis (easy magnetisation direction) perpendicular to the film plane were achieved on amorphous SiN substrates using pulsed laser deposition. The texture arises due to epitaxial growth on a Ta(1 1 0) buffer deposited prior to the Nd-Fe-B film. Out-of-plane coercivity of 1.3 T and remanence to saturation magnetisation ratio around 0.95 are obtained for Nd-rich films. An analysis of the coercivity mechanism shows that the switching mechanism is nucleation dominated, independent of the Nd content

  2. Highly textured Nd-Fe-B films grown on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hannemann, Ullrich E-mail: u.hannemann@ifw-dresden.de; Melcher, Steffen; Faehler, Sebastian

    2004-05-01

    Thin films with an almost perfect alignment of Nd{sub 2}Fe{sub 14}B grains with the c-axis (easy magnetisation direction) perpendicular to the film plane were achieved on amorphous SiN substrates using pulsed laser deposition. The texture arises due to epitaxial growth on a Ta(1 1 0) buffer deposited prior to the Nd-Fe-B film. Out-of-plane coercivity of 1.3 T and remanence to saturation magnetisation ratio around 0.95 are obtained for Nd-rich films. An analysis of the coercivity mechanism shows that the switching mechanism is nucleation dominated, independent of the Nd content.

  3. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  4. Structural-morphological variations in pseudo-barrier films of anode aluminium oxide under irradiation with high-energy particles

    International Nuclear Information System (INIS)

    Chernykh, M.A.; Belov, V.T.

    1988-01-01

    Comparative study of structural-morphological variations under electron beam effect in pseudo-barrier films of anode aluminium oxide, obtained in seven different solutions and proton or X-rays pre-irradiated to determine structure peculiarities of anode aluminium oxides, is presented. Such study is a matter of interest from the solid-phase transformation theory point of view and for anode aluminium films application under radiation. Stability increase of pseudo-barrier films of anode aluminium oxide to the effect of UEhMV-100 K microscope electron beam at standard modes of operation (75 kV) due to proton or X-rays irradiation is found. Difference in structural-monorphological variations obtained in different solutions of anode aluminium films under high-energy particles irradiation is determined. Strucural-phase microinhomogeneity of amorphous pseudo-barrier films of anode aluminium oxide and its influence on solid-phase transformations character under electron bean of maximal intensity are detected

  5. Solubility of crystalline organic compounds in high and low molecular weight amorphous matrices above and below the glass transition by zero enthalpy extrapolation.

    Science.gov (United States)

    Amharar, Youness; Curtin, Vincent; Gallagher, Kieran H; Healy, Anne Marie

    2014-09-10

    Pharmaceutical applications which require knowledge of the solubility of a crystalline compound in an amorphous matrix are abundant in the literature. Several methods that allow the determination of such data have been reported, but so far have only been applicable to amorphous polymers above the glass transition of the resulting composites. The current work presents, for the first time, a reliable method for the determination of the solubility of crystalline pharmaceutical compounds in high and low molecular weight amorphous matrices at the glass transition and at room temperature (i.e. below the glass transition temperature), respectively. The solubilities of mannitol and indomethacin in polyvinyl pyrrolidone (PVP) K15 and PVP K25, respectively were measured at different temperatures. Mixtures of undissolved crystalline solute and saturated amorphous phase were obtained by annealing at a given temperature. The solubility at this temperature was then obtained by measuring the melting enthalpy of the crystalline phase, plotting it as a function of composition and extrapolating to zero enthalpy. This new method yielded results in accordance with the predictions reported in the literature. The method was also adapted for the measurement of the solubility of crystalline low molecular weight excipients in amorphous active pharmaceutical ingredients (APIs). The solubility of mannitol, glutaric acid and adipic acid in both indomethacin and sulfadimidine was experimentally determined and successfully compared with the difference between their respective calculated Hildebrand solubility parameters. As expected from the calculations, the dicarboxylic acids exhibited a high solubility in both amorphous indomethacin and sulfadimidine, whereas mannitol was almost insoluble in the same amorphous phases at room temperature. This work constitutes the first report of the methodology for determining an experimentally measured solubility for a low molecular weight crystalline solute

  6. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  7. Application of amorphous filler metals in production of fusion reactor high heat flux components

    Energy Technology Data Exchange (ETDEWEB)

    Kalin, B A [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Fedotov, V T [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Grigoriev, A E [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Sevriukov, O N [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Pliushev, A N [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Skuratov, L A [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Polsky, V I [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Yakushin, V L [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Virgiliev, Yu S [State Research Institute of Graphite, Electrodnaya St. 2, 115524 Moscow (Russian Federation); Vasiliev, V L [TRINITI, Troitsk, 142092 Moscow District (Russian Federation); Tserevitinov, S S [TRINITI, Troitsk, 142092 Moscow District (Russian Federation)

    1995-03-01

    Amorphous ribbon-type filler metals represent a promising facility for fastening heterogeneous materials together. The advantage results from the homogeneity of element and phase compositions and the strictly specified geometrical dimensions of such fillers. Amorphous fillers Zr-Ti-Fe-Be, Zr-Ti-Ni-Cu and Ti-Zr-Ni-Cu and microcrystalline fillers Al-Si and Cu-Sn-Mn-In-Ni were produced by quenching at a rate of about 10{sup 6}Ks{sup -1}. Brazing of graphite with metals (Cu+MPG-6, Cu+RGT, Mo+MIG-1, V+MIG-1, V+RGT) was accomplished using ribbon-type fillers. Two types of metal-based samples were produced in the form of plates and rakes. The rakes were made by brazing three small graphite bars to the metal, the 2mm space between the bars being 0.25 of the bar height. The results of metallographic studies of the brazing zone and of tests on brazed structures treated by pulsed energy fluxes are discussed. (orig.).

  8. Barriers to Effective Learning of High School Students in Turkey

    Directory of Open Access Journals (Sweden)

    Eda Gürlen

    2016-06-01

    Full Text Available This study aims to present the development and validation process of a scale to explore the learning barriers of high school students in Turkey. For this purpose, a scale was developed and administered to 316 high school students studying in the different counties of Ankara in the spring term of 2014-2015 academic year. Gathering the data, an exploratory factor analysis was run through SPSS Package program to see the structure of the interrelationships among the variables under six tests. Furthermore, a reliability analysis was conducted to the items under each test in the scale. As a result, one factor appeared under each test when the eigenvalues and variance percentages were examined, making six factors in total. The Cronbach’s Alpha Reliability Coefficient was calculated as to be significant for each test, which showed that the tests were reliable. Finally, some items were excluded from the scale.

  9. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  10. Neutron irradiation and high temperature effects on amorphous Fe-based nano-coatings on steel - A macroscopic assessment

    Science.gov (United States)

    Simos, N.; Zhong, Z.; Dooryhee, E.; Ghose, S.; Gill, S.; Camino, F.; Şavklıyıldız, İ.; Akdoğan, E. K.

    2017-06-01

    The study revealed that loss of ductility in an amorphous Fe-alloy coating on a steel substrate composite structure was essentially prevented from occurring, following radiation with modest neutron doses of ∼2 × 1018 n/cm2. At the higher neutron dose of ∼2 × 1019, macroscopic stress-strain analysis showed that the amorphous Fe-alloy nanostructured coating, while still amorphous, experienced radiation-induced embrittlement, no longer offering protection against ductility loss in the coating-substrate composite structure. Neutron irradiation in a corrosive environment revealed exemplary oxidation/corrosion resistance of the amorphous Fe-alloy coating, which is attributed to the formation of the Fe2B phase in the coating. To establish the impact of elevated temperatures on the amorphous-to-crystalline transition in the amorphous Fe-alloy, electron microscopy was carried out which confirmed the radiation-induced suppression of crystallization in the amorphous Fe-alloy nanostructured coating.

  11. Neutron irradiation and high temperature effects on amorphous Fe-based nano-coatings on steel – A macroscopic assessment

    International Nuclear Information System (INIS)

    Simos, N.; Zhong, Z.; Dooryhee, E.; Ghose, S.; Gill, S.

    2017-01-01

    Here, this study revealed that loss of ductility in an amorphous Fe-alloy coating on a steel substrate composite structure was essentially prevented from occurring, following radiation with modest neutron doses of ~2 x 10 18 n/cm 2 . At the higher neutron dose of ~2 x 10 19 , macroscopic stress-strain analysis showed that the amorphous Fe-alloy nanostructured coating, while still amorphous, experienced radiation-induced embrittlement, no longer offering protection against ductility loss in the coating-substrate composite structure. Neutron irradiation in a corrosive environment revealed exemplary oxidation/corrosion resistance of the amorphous Fe-alloy coating, which is attributed to the formation of the Fe 2 B phase in the coating. To establish the impact of elevated temperatures on the amorphous-to-crystalline transition in the amorphous Fe-alloy, electron microscopy was carried out which confirmed the radiation-induced suppression of crystallization in the amorphous Fe-alloy nanostructured coating.

  12. Amorphous MoS{sub x} on CdS nanorods for highly efficient photocatalytic hydrogen evolution

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaofang; Tang, Chaowan; Zheng, Qun; Shao, Yu; Li, Danzhen, E-mail: dzli@fzu.edu.cn

    2017-02-15

    Loading cocatalyst on semiconductors was crucially necessary for improving the photocatalytic hydrogen evolution. Amorphous MoS{sub x} as a novel and noble metal-free cocatalyst was loaded on CdS nanorods by a simple photodeposition method. Efficient hydrogen evolution with amount of 15 mmol h{sup −1} g{sup −1} was observed over the MoS{sub x} modified CdS nanorods, which was about 6 times higher than that by using Pt as cocatalyst. Meanwhile, with MoS{sub x} cocatalyst, the efficiency of CdS nanorods was superior to that of CdS nanoparticles and bulk CdS. No deactivation could be observed in the efficiency of MoS{sub x} modified CdS nanorods under irradiation for successive 10 h. Further experimental results indicated that the efficient electrons transfer, low overpotential of hydrogen evolution and active S atoms over the MoS{sub x} modified CdS nanorods were responsible for the higher efficiency. Our results provided guidance for synthesizing noble metal-free materials as cocatalyst for photocatalytic hydrogen evolution. - Graphical abstract: Photodeposition of amorphous MoS{sub x} on CdS nanorods for highly efficient photocatalytic hydrogen evolution. - Highlights: • Amorphous MoSx cocatalyst was loaded on CdS NRs by a simple photodeposition. • MoS{sub x}/CdS NRs exhibited 6 times higher hydrogen evolution efficiency than Pt/CdS NRs. • The hydrogen evolution of MoS{sub x}/CdS NRs linearly increased with prolonging time. • Lower overpotential and efficient electron transfer were observed over MoS{sub x}/CdS NRs.

  13. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  14. High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

    Science.gov (United States)

    Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2018-06-12

    Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

  15. Ion implantation and amorphous metals

    International Nuclear Information System (INIS)

    Hohmuth, K.; Rauschenbach, B.

    1981-01-01

    This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

  16. Amorphous drugs and dosage forms

    DEFF Research Database (Denmark)

    Grohganz, Holger; Löbmann, K.; Priemel, P.

    2013-01-01

    The transformation to an amorphous form is one of the most promising approaches to address the low solubility of drug compounds, the latter being an increasing challenge in the development of new drug candidates. However, amorphous forms are high energy solids and tend to recry stallize. New...... formulation principles are needed to ensure the stability of amorphous drug forms. The formation of solid dispersions is still the most investigated approach, but additional approaches are desirable to overcome the shortcomings of solid dispersions. Spatial separation by either coating or the use of micro-containers...... before single molecules are available for the formation of crystal nuclei, thus stabilizing the amorphous form....

  17. Amorphous superconductors

    International Nuclear Information System (INIS)

    Missell, F.P.

    1985-01-01

    We describe briefly the strong coupling superconductivity observed in amorphous alloys based upon simple metals. For transition metal alloys we discuss the behavior of the superconducting transition temperature T c , the upper critical field H (sub)c2 and the critical current J c . A survey of current problems is presented. (author) [pt

  18. A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy

    International Nuclear Information System (INIS)

    Grandjean, A.

    1996-01-01

    The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom 3 . Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author)

  19. High-resolution reconstruction of a coastal barrier system

    DEFF Research Database (Denmark)

    Fruergaard, Mikkel; Andersen, Thorbjørn Joest; Nielsen, Lars Henrik

    2015-01-01

    This study presents a detailed reconstruction of the sedimentary effects of Holocene sea-level rise on a modern coastal barrier system (CBS). Increasing concern over the evolution of CBSs due to future accelerated rates of sea-level rise calls for a better understanding of coastal barriers response...... from retreat of the barrier island and probably also due to formation of a tidal inlet close to the study area. Continued transgression and shoreface retreat created a distinct hiatus and wave ravinement surface in the seaward part of the CBS before the barrier shoreline stabilised between 5.0 and 4...

  20. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

    Science.gov (United States)

    Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

    2017-02-10

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

  1. One-Pot Synthesis of Tunable Crystalline Ni3 S4 @Amorphous MoS2 Core/Shell Nanospheres for High-Performance Supercapacitors.

    Science.gov (United States)

    Zhang, Yu; Sun, Wenping; Rui, Xianhong; Li, Bing; Tan, Hui Teng; Guo, Guilue; Madhavi, Srinivasan; Zong, Yun; Yan, Qingyu

    2015-08-12

    Transition metal sulfides gain much attention as electrode materials for supercapacitors due to their rich redox chemistry and high electrical conductivity. Designing hierarchical nanostructures is an efficient approach to fully utilize merits of each component. In this work, amorphous MoS(2) is firstly demonstrated to show specific capacitance 1.6 times as that of the crystalline counterpart. Then, crystalline core@amorphous shell (Ni(3)S(4)@MoS(2)) is prepared by a facile one-pot process. The diameter of the core and the thickness of the shell can be independently tuned. Taking advantages of flexible protection of amorphous shell and high capacitance of the conductive core, Ni(3)S(4) @amorphous MoS(2) nanospheres are tested as supercapacitor electrodes, which exhibit high specific capacitance of 1440.9 F g(-1) at 2 A g(-1) and a good capacitance retention of 90.7% after 3000 cycles at 10 A g(-1). This design of crystalline core@amorphous shell architecture may open up new strategies for synthesizing promising electrode materials for supercapacitors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

    Science.gov (United States)

    Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

    2018-02-28

    In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

  3. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  4. Thermal barrier coatings (TBC's) for high heat flux thrust chambers

    Science.gov (United States)

    Bradley, Christopher M.

    -section components has become critical, but at the same time the service conditions have put our best alloy systems to their limits. As a result, implementation of cooling holes and thermal barrier coatings are new advances in hot-section technologies now looked at for modifications to reach higher temperature applications. Current thermal barrier coatings used in today's turbine applications is known as 8%yttria-stabilized zirconia (YSZ) and there are no coatings for current thrust chambers. Current research is looking at the applicability of 8%yttria-stabilized hafnia (YSH) for turbine applications and the implementation of 8%YSZ onto thrust chambers. This study intends to determine if the use of thermal barrier coatings are applicable for high heat flux thrust chambers using industrial YSZ will be advantageous for improvements in efficiency, thrust and longer service life by allowing the thrust chambers to be used more than once.

  5. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  6. Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses

    KAUST Repository

    Ryu, Sang-Gil

    2012-09-01

    This paper presents a pulsed laser crystallization technique, enabling large area crystallization of amorphous Si to produce grains having well-defined size and orientation. The method is developed by first determining the parameters influencing crystallization induced by single laser pulses of circular cross-sectional profile. In a second step, crystallization by overlapping round spots is examined. The experiments reveal three zones characterized by distinctly different crystallized morphologies following the laser irradiation. One of these zones corresponds to the regime of lateral crystal growth, wherein grains are driven towards the center of the spot by the radial temperature gradient. These findings are then applied to processing via line beam profiles that facilitate large area crystallization upon rapid translation of the specimen. Crystallization of extended areas hinges on the determination of the crystal growth length for a single spot. The pitch between successive pulses is then set on the basis of this information. It is shown that the pulse energy has only a weak effect on the crystal growth length. © 2012 Elsevier B.V.

  7. Cost-effective alternative to nano-encapsulation: Amorphous curcumin-chitosan nanoparticle complex exhibiting high payload and supersaturation generation.

    Science.gov (United States)

    Nguyen, Minh Hiep; Yu, Hong; Kiew, Tie Yi; Hadinoto, Kunn

    2015-10-01

    While the wide-ranging therapeutic activities of curcumin have been well established, its successful delivery to realize its true therapeutic potentials faces a major challenge due to its low oral bioavailability. Even though nano-encapsulation has been widely demonstrated to be effective in enhancing the bioavailability of curcumin, it is not without drawbacks (i.e. low payload and costly preparation). Herein we present a cost-effective bioavailability enhancement strategy of curcumin in the form of amorphous curcumin-chitosan nanoparticle complex (or curcumin nanoplex in short) exhibiting a high payload (>80%). The curcumin nanoplex was prepared by a simple yet highly efficient drug-polysaccharide complexation method that required only mixing of the curcumin and chitosan solutions under ambient condition. The effects of (1) pH and (2) charge ratio of chitosan to curcumin on the (i) physical characteristics of the nanoplex (i.e. size, colloidal stability and payload), (ii) complexation efficiency, and (iii) production yield were investigated from which the optimal preparation condition was determined. The nanoplex formation was found to favor low acidic pH and charge ratio below unity. At the optimal condition (i.e. pH 4.4. and charge ratio=0.8), stable curcumin nanoplex (≈260nm) was prepared at >90% complexation efficiency and ≈50% production yield. The amorphous state stability, colloidal stability, and in vitro non-cytotoxicity of the nanoplex were successfully established. The curcumin nanoplex produced prolonged supersaturation (3h) in the presence of hydroxypropyl methylcellulose (HPMC) at five times of the saturation solubility of curcumin. In addition, curcumin released from the nanoplex exhibited improved chemical stability owed to the presence of chitosan. Both results (i.e. high supersaturation and improved chemical stability) bode well for the ability of the curcumin nanoplex to enhance the bioavailability of curcumin clinically. Copyright © 2015

  8. Structural amorphous steels

    International Nuclear Information System (INIS)

    Lu, Z.P.; Liu, C.T.; Porter, W.D.; Thompson, J.R.

    2004-01-01

    Recent advancement in bulk metallic glasses, whose properties are usually superior to their crystalline counterparts, has stimulated great interest in fabricating bulk amorphous steels. While a great deal of effort has been devoted to this field, the fabrication of structural amorphous steels with large cross sections has remained an alchemist's dream because of the limited glass-forming ability (GFA) of these materials. Here we report the discovery of structural amorphous steels that can be cast into glasses with large cross-section sizes using conventional drop-casting methods. These new steels showed interesting physical, magnetic, and mechanical properties, along with high thermal stability. The underlying mechanisms for the superior GFA of these materials are discussed

  9. Hysteresis properties of the amorphous high permeability Co66Fe3Cr3Si15B13 alloy

    Directory of Open Access Journals (Sweden)

    V. S. Tsepelev

    2018-04-01

    Full Text Available The scaling law of minor loops was studied on an amorphous alloy Co66Fe3Cr3Si15B13 with a very high initial permeability (more than 150000 and low coercivity (about 0.1 A/m. An analytical expression for the coercive force in the Rayleigh region was derived. The coercive force is connected with the maximal magnetic field Hmax via the reversibility coefficient μi/ηHmax. Reversibility coefficient shows the relationship between reversible and irreversible magnetization processes. A universal dependence of magnetic losses for hysteresis Wh on the remanence Br with a power factor of 1.35 is confirmed for a wide range of magnetic fields strengths.

  10. High-Performance Corrosion-Resistant Materials: Iron-Based Amorphous-Metal Thermal-Spray Coatings

    International Nuclear Information System (INIS)

    Farmer, J C; Haslam, J J; Wong, F; Ji, X; Day, S D; Branagan, D J; Marshall, M C; Meacham, B E; Buffa, E J; Blue, C A; Rivard, J K; Beardsley, M B; Weaver, D T; Aprigliano, L F; Kohler, L; Bayles, R; Lemieux, E J; Wolejsza, T M; Martin, F J; Yang, N; Lucadamo, G; Perepezko, J H; Hildal, K; Kaufman, L; Heuer, A H; Ernst, F; Michal, G M; Kahn, H; Lavernia, E J

    2004-01-01

    The multi-institutional High Performance Corrosion Resistant Materials (HPCRM) Team is cosponsored by the Defense Advanced Projects Agency (DARPA) Defense Science Office (DSO) and the Department of Energy (DOE) Office of Civilian Radioactive Waste Management (OCRWM), and has developed new corrosion-resistant, iron-based amorphous metals that can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Corrosion costs the Department of Defense billions of dollars every year, with an immense quantity of material in various structures undergoing corrosion. For example, in addition to fluid and seawater piping, ballast tanks, and propulsions systems, approximately 345 million square feet of structure aboard naval ships and crafts require costly corrosion control measures. The use of advanced corrosion-resistant materials to prevent the continuous degradation of this massive surface area would be extremely beneficial. The Fe-based corrosion-resistant, amorphous-metal coatings under development may prove of importance for applications on ships. Such coatings could be used as an ''integral drip shield'' on spent fuel containers, as well as protective coatings that could be applied over welds, thereby preventing exposure to environments that might cause stress corrosion cracking. In the future, such new high-performance iron-based materials could be substituted for more-expensive nickel-based alloys, thereby enabling a reduction in the $58-billion life cycle cost for the long-term storage of the Nation's spent nuclear fuel by tens of percent

  11. High-energy ion treatments of amorphous As40Se60 thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Rashmi Chauhan

    2014-06-01

    Full Text Available The treatment of 100 MeV Ag swift-heavy ion (SHI irradiation with five different fluences (3×1010, 1×1011, 3×1011, 1×1012, and 3×1012 ions/cm2 was used to design optical and structural properties of amorphous (a- As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation. Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3×1012 ions/cm2 was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31×10−10 [esu] to 1.74×10−10 [esu]. Linear refractive index initially increases from 2.80 to 3.52 (for fluence 3×1010 ions/cm2 and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.

  12. Facile synthesis of highly efficient amorphous Mn-MIL-100 catalysts: The formation mechanism and the structure changes during the application for CO oxidation.

    Science.gov (United States)

    Zhang, Xiaodong; Li, Hongxin; Lv, Xutian; Xu, Jingcheng; Wang, Yuxin; He, Chi; Liu, Ning; Yang, Yiqiong; Wang, Yin

    2018-04-13

    A comprehensive study was carried out on amorphous metal-organic frameworks Mn-MIL-100 as efficient catalysts towards CO oxidation. This study focuses on explaining the crystalline-amorphous-crystalline transformations during thermolysis process of Mn-MIL-100 and studying the structure changes during the reaction process for CO oxidation. A possible formation mechanism of amorphous Mn-MIL-100 was proposed. Amorphous Mn-MIL-100 obtained by calcination at 250°C (a-Mn-250) showed a smaller specific surface area (4 m2/g), but displayed a high catalytic activity. Furthermore, the structure of amorphous Mn-MIL-100 was labile during the reaction process. When used a-Mn-250 were treated with reaction atmosphere at high temperature (named used a-Mn-250-S), the amorphous catalysts transformed to Mn2O3. Meanwhile, BET surface area (164 m2/g) and the catalytic performance both sharply increased. In addition, used a-Mn-250-S catalyst transformed from Mn2O3 to Mn3O4, resulting in the slightly decrease of catalytic activity under the presence of 1 vol% water vapor in the stream. A schematic of the structure changes during the reaction process was proposed. The achievement of our synthesis relies on the increase of BET surface area using CO as retreatment atmosphere, and the enhanced catalytic activity was attributed to the unique structure, a high quantity of surface active oxygen species, oxygen vacancies and good low temperature reduction behavior. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  14. Resilient Amorphous Networks Prepared by Photo-Crosslinking High-Molecular-Weight D,L-Lactide and Trimethylene Carbonate Macromers: Mechanical Properties and Shape-Memory Behavior

    NARCIS (Netherlands)

    Sharifi, Shahriar; Grijpma, Dirk W.

    2012-01-01

    Tough networks are prepared by photo-crosslinking high-molecular-weight DLLA and TMC macromers. These amorphous networks exhibit tunable thermal and mechanical properties and have excellent shape-memory features. Variation of the monomer ratio allows adjustment of Tg between approximately −13 and

  15. Air-stable π-conjugated amorphous copolymer field-effect transistors with high mobility of 0.3 cm2/Vs

    DEFF Research Database (Denmark)

    Georgakopoulos, S.; Gu, Y.; Nielsen, Martin Meedom

    2012-01-01

    We have fabricated organic bottom-contact top-gate field-effect transistors with an indenofluorene-phenanthrene co-polymer semiconductor, exhibiting ON/OFF ratio of 10(7) and uncommonly high mobility for an amorphous conjugated polymer of up to 0.3 cm(2)/Vs. Lack of crystallinity in this material...

  16. High density internal transport barriers for burning plasma operation

    Energy Technology Data Exchange (ETDEWEB)

    Ridolfini, V Pericoli [Associazione EURATOM-ENEA sulla Fusione, CR Frascati, Rome (Italy); Barbato, E [Associazione EURATOM-ENEA sulla Fusione, CR Frascati, Rome (Italy); Buratti, P [Associazione EURATOM-ENEA sulla Fusione, CR Frascati, Rome (Italy)] (and others)

    2005-12-15

    A tokamak plasma with internal transport barriers (ITBs) is the best candidate for a steady ITER operation, since the high energy confinement allows working at plasma currents (I{sub p}) lower than the reference scenario. To build and sustain an ITB at the ITER high density ({>=}10{sup 20} m{sup -3}) and largely dominant electron (e{sup -}) heating is not trivial in most existing tokamaks. FTU can instead meet both requests, thanks to its radiofrequency heating systems, lower hybrid (LH, up to 1.9 MW) and electron cyclotron (EC up to 1.2 MW). By the combined use of them, ITBs are obtained up to peak densities n{sub e0} > 1.3 x 10{sup 20} m{sup -3}, with central e{sup -} temperatures T{sub e0} {approx} 5.5 keV, and are sustained for as long as the heating pulse is applied (>35 confinement times, {tau}{sub E}). At n{sub e0} {approx} 0.8 x 10{sup 20} m{sup -3} T{sub e0} can be larger than 11 keV. Almost full current drive (CD) and an overall good steadiness is attained within about one {tau}{sub E}, 20 times faster than the ohmic current relaxation time. The ITB extends over a central region with an almost flat or slightly reversed q profile and q{sub min} {approx} 1.3 that is fully sustained by off-axis lower hybrid current drive. Consequent to this is the beneficial good alignment of the bootstrap current, generated by the ITB large pressure gradients, with the LH driven current. Reflectometry shows a clear change in the turbulence close to the ITB radius, consistent with the reduced e{sup -} transport. Ions (i{sup +}) are significantly heated via collisions, but thermal equilibrium with electrons cannot be attained since the e{sup -}-i{sup +} equipartition time is always 4-5 times longer than {tau}{sub E}. No degradation of the overall ion transport, rather a reduction of the i{sup +} heat diffusivity, is observed inside the ITB. The global confinement has been improved up to 1.6 times over the scaling predictions. The ITB radius can be controlled by adjusting the

  17. Radiation amorphization of materials

    International Nuclear Information System (INIS)

    Neklyudov, I.M.; Chernyaeva, T.P.

    1993-01-01

    The results of experimental and theoretical research on radiation amorphization are presented in this analytical review. Mechanism and driving forces of radiation amorphization are described, kinetic and thermodynamic conditions of amorphization are formulated. Compositional criteria of radiation amorphization are presented, that allow to predict irradiation behaviour of materials, their tendency to radiation amorphization. Mechanism of transition from crystalline state to amorphous state are considered depending on dose, temperature, structure of primary radiation damage and flux level. (author). 134 refs., 4 tab., 25 fig

  18. Amorphizing of Cu Nanoparticles toward Highly Efficient and Robust Electrocatalyst for CO2 Reduction to Liquid Fuels with High Faradaic Efficiencies.

    Science.gov (United States)

    Duan, Yan-Xin; Meng, Fan-Lu; Liu, Kai-Hua; Yi, Sha-Sha; Li, Si-Jia; Yan, Jun-Min; Jiang, Qing

    2018-04-01

    Conversion of carbon dioxide (CO 2 ) into valuable chemicals, especially liquid fuels, through electrochemical reduction driven by sustainable energy sources, is a promising way to get rid of dependence on fossil fuels, wherein developing of highly efficient catalyst is still of paramount importance. In this study, as a proof-of-concept experiment, first a facile while very effective protocol is proposed to synthesize amorphous Cu NPs. Unexpectedly, superior electrochemical performances, including high catalytic activity and selectivity of CO 2 reduction to liquid fuels are achieved, that is, a total Faradaic efficiency of liquid fuels can sum up to the maximum value of 59% at -1.4 V, with formic acid (HCOOH) and ethanol (C 2 H 6 O) account for 37% and 22%, respectively, as well as a desirable long-term stability even up to 12 h. More importantly, this work opens a new avenue for improved electroreduction of CO 2 based on amorphous metal catalysts. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. High density internal transport barriers for burning plasma operation

    International Nuclear Information System (INIS)

    Pericoli Ridolfini, V.

    2005-01-01

    One of the proposed ITER scenarios foresees the creation and sustainment of an internal transport barrier (ITB) in order to improve the confinement properties of the hot core plasma. The more stringent requests are: the ITB must be sustained with electron heating only with no or very small external momentum source, the strong collisional coupling at the envisaged density (line average >1.0 1020 m-3) must not prevent the barrier existence, the bootstrap current created by the large induced gradients must have a radial profile consistent with that requested by the barrier creation and sustainment. To all these items the studies carried out in FTU in the same density range (ne0 ?1.5 1020 m-3) provide encouraging prospects. With pure electron heating and current drive (LH+ECH) steady electron barrier are generated and maintained with central e- temperature >5.0 keV. Almost full CD conditions are established with a bootstrap current close to 25% of the total and well aligned with that driven by the LH waves and responsible for the barrier building. The clear change in the density fluctuations close to the ITB radius, observed by reflectometry, indicates stabilization of turbulence that is consistent with the drop of the thermal electron diffusivity inside the ITB to very low values, ?e<0.5 m2/s estimated by the transport analysis. The 10 fold neutron rate increase testifies a significant collisional ion heating, even though usually ?Ti0/Ti0 does not exceed 40%, because the e--i + equipartition time, always 4-5 times longer than the energy confinement time, does not allow thermal equilibrium with electrons to be attained. The ion thermal diffusivity inside the barrier must be lowered to the neoclassical level to account for the observed Ti(r) profiles, clearly indicating at least a non-degraded ion transport. The global confinement in turn improves by 1.6 times above the FTU L-scaling. The ITB radius can be controlled by varying the LH power deposition profile that is

  20. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  1. Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

    Science.gov (United States)

    Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

    2015-01-14

    In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

  2. Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

    International Nuclear Information System (INIS)

    Sielski, Jan; Jeszka, Jeremiasz K.

    2012-01-01

    The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

    International Nuclear Information System (INIS)

    Shulga, V.I.

    2014-01-01

    The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

  4. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  5. Graphene Oxide Bionanocomposite Coatings with High Oxygen Barrier Properties

    Directory of Open Access Journals (Sweden)

    Ilke Uysal Unalan

    2016-12-01

    Full Text Available In this work, we present the development of bionanocomposite coatings on poly(ethylene terephthalate (PET with outstanding oxygen barrier properties. Pullulan and graphene oxide (GO were used as main polymer phase and nanobuilding block (NBB, respectively. The oxygen barrier performance was investigated at different filler volume fractions (ϕ and as a function of different relative humidity (RH values. Noticeably, the impermeable nature of GO was reflected under dry conditions, in which an oxygen transmission rate (OTR, mL·m−2·24 h−1 value below the detection limit of the instrument (0.01 mL·m−2·24 h−1 was recorded, even for ϕ as low as 0.0004. A dramatic increase of the OTR values occurred in humid conditions, such that the barrier performance was totally lost at 90% RH (the OTR of coated PET films was equal to the OTR of bare PET films. Modelling of the experimental OTR data by Cussler’s model suggested that the spatial ordering of GO sheets within the main pullulan phase was perturbed because of RH fluctuations. In spite of the presence of the filler, all the formulations allowed the obtainment of final materials with haze values below 3%, the only exception being the formulation with the highest loading of GO (ϕ ≈ 0.03. The mechanisms underlying the experimental observations are discussed.

  6. ANALYSIS OF BARRIERS IN LISTENING COMPREHENSION AMONG JUNIOR HIGH SCHOOL STUDENTS

    Directory of Open Access Journals (Sweden)

    Setia Muljanto

    2012-12-01

    Full Text Available This research paper identifies barriers and difficulties in listening comprehension faced by junior high school students. The research questions were what barriers did students encounter and how did they used strategies to overcome those barriers. This study used a qualitative method and was a case study involving 40 students and one English teacher. The data were obtained by ways of conducting a test of listening taken from TOEIC test. The tests indicated that the results scores were not quite satisfactory. This is primarily caused by speech delivery of the native speaker which was too fast. This means that students faced listening barriers especially in processing information. The data also indicated that students were also nervous when doing the test as habitual barrier. Strategies used to overcome these barriers are by making students get used to listen and use English and making them familiar with certain contexts in real life.

  7. Influence of sample preparation on the transformation of low-density to high-density amorphous ice: An explanation based on the potential energy landscape

    Science.gov (United States)

    Giovambattista, Nicolas; Starr, Francis W.; Poole, Peter H.

    2017-07-01

    Experiments and computer simulations of the transformations of amorphous ices display different behaviors depending on sample preparation methods and on the rates of change of temperature and pressure to which samples are subjected. In addition to these factors, simulation results also depend strongly on the chosen water model. Using computer simulations of the ST2 water model, we study how the sharpness of the compression-induced transition from low-density amorphous ice (LDA) to high-density amorphous ice (HDA) is influenced by the preparation of LDA. By studying LDA samples prepared using widely different procedures, we find that the sharpness of the LDA-to-HDA transformation is correlated with the depth of the initial LDA sample in the potential energy landscape (PEL), as characterized by the inherent structure energy. Our results show that the complex phenomenology of the amorphous ices reported in experiments and computer simulations can be understood and predicted in a unified way from knowledge of the PEL of the system.

  8. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  9. Structure, thermodynamics, and crystallization of amorphous hafnia

    International Nuclear Information System (INIS)

    Luo, Xuhui; Demkov, Alexander A.

    2015-01-01

    We investigate theoretically amorphous hafnia using the first principles melt and quench method. We identify two types of amorphous structures of hafnia. Type I and type II are related to tetragonal and monoclinic hafnia, respectively. We find type II structure to show stronger disorder than type I. Using the phonon density of states, we calculate the specific heat capacity for type II amorphous hafnia. Using the nudged elastic band method, we show that the averaged transition barrier between the type II amorphous hafnia and monoclinic phase is approximately 0.09 eV/HfO 2 . The crystallization temperature is estimated to be 421 K. The calculations suggest an explanation for the low thermal stability of amorphous hafnia

  10. FY05 HPCRM Annual Report: High-Performance Corrosion-Resistant Iron-Based Amorphous Metal Coatings

    International Nuclear Information System (INIS)

    Farmer, J; Choi, J; Haslam, J; Day, S; Yang, N; Headley, T; Lucadamo, G; Yio, J; Chames, J; Gardea, A; Clift, M; Blue, G; Peters, W; Rivard, J; Harper, D; Swank, D; Bayles, R; Lemieux, E; Brown, R; Wolejsza, T; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Lavernia, E; Schoenung, J; Ajdelsztajn, L; Dannenberg, J; Graeve, O; Lewandowski, J; Perepezko, J; Hildal, K; Kaufman, L; Boudreau, J

    2007-01-01

    New corrosion-resistant, iron-based amorphous metals have been identified from published data or developed through combinatorial synthesis, and tested to determine their relative corrosion resistance. Many of these materials can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in some very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Two Fe-based amorphous metal formulations have been found that appear to have corrosion resistance comparable to, or better than that of Ni-based Alloy C-22, based on breakdown potential and corrosion rate. Both Cr and Mo provide corrosion resistance, B enables glass formation, and Y lowers critical cooling rate (CCR). SAM1651 has yttrium added, and has a nominal critical cooling rate of only 80 Kelvin per second, while SAM2X7 (similar to SAM2X5) has no yttrium, and a relatively high critical cooling rate of 610 Kelvin per second. Both amorphous metal formulations have strengths and weaknesses. SAM1651 (yttrium added) has a low critical cooling rate (CCR), which enables it to be rendered as a completely amorphous thermal spray coating. Unfortunately, it is relatively difficult to atomize, with powders being irregular in shape. This causes the powder to be difficult to pneumatically convey during thermal spray deposition. Gas atomized SAM1651 powder has required cryogenic milling to eliminate irregularities that make flow difficult. SAM2X5 (no yttrium) has a high critical cooling rate, which has caused problems associated with devitrification. SAM2X5 can be gas atomized to produce spherical powders of SAM2X5, which enable more facile thermal spray deposition. The reference material, nickel-based Alloy C-22, is an outstanding corrosion-resistant engineering material. Even so, crevice corrosion has been observed with C-22 in hot sodium chloride environments without buffer

  11. FY05 HPCRM Annual Report: High-Performance Corrosion-Resistant Iron-Based Amorphous Metal Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Farmer, J; Choi, J; Haslam, J; Day, S; Yang, N; Headley, T; Lucadamo, G; Yio, J; Chames, J; Gardea, A; Clift, M; Blue, G; Peters, W; Rivard, J; Harper, D; Swank, D; Bayles, R; Lemieux, E; Brown, R; Wolejsza, T; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Lavernia, E; Schoenung, J; Ajdelsztajn, L; Dannenberg, J; Graeve, O; Lewandowski, J; Perepezko, J; Hildal, K; Kaufman, L; Boudreau, J

    2007-09-20

    New corrosion-resistant, iron-based amorphous metals have been identified from published data or developed through combinatorial synthesis, and tested to determine their relative corrosion resistance. Many of these materials can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in some very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Two Fe-based amorphous metal formulations have been found that appear to have corrosion resistance comparable to, or better than that of Ni-based Alloy C-22, based on breakdown potential and corrosion rate. Both Cr and Mo provide corrosion resistance, B enables glass formation, and Y lowers critical cooling rate (CCR). SAM1651 has yttrium added, and has a nominal critical cooling rate of only 80 Kelvin per second, while SAM2X7 (similar to SAM2X5) has no yttrium, and a relatively high critical cooling rate of 610 Kelvin per second. Both amorphous metal formulations have strengths and weaknesses. SAM1651 (yttrium added) has a low critical cooling rate (CCR), which enables it to be rendered as a completely amorphous thermal spray coating. Unfortunately, it is relatively difficult to atomize, with powders being irregular in shape. This causes the powder to be difficult to pneumatically convey during thermal spray deposition. Gas atomized SAM1651 powder has required cryogenic milling to eliminate irregularities that make flow difficult. SAM2X5 (no yttrium) has a high critical cooling rate, which has caused problems associated with devitrification. SAM2X5 can be gas atomized to produce spherical powders of SAM2X5, which enable more facile thermal spray deposition. The reference material, nickel-based Alloy C-22, is an outstanding corrosion-resistant engineering material. Even so, crevice corrosion has been observed with C-22 in hot sodium chloride environments without buffer

  12. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Directory of Open Access Journals (Sweden)

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  13. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Science.gov (United States)

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  14. Nanocomposites of high-density polyethylene with amorphous calcium phosphate: in vitro biomineralization and cytocompatibility of human mesenchymal stem cells

    International Nuclear Information System (INIS)

    Hild, Nora; Fuhrer, Roland; Mohn, Dirk; Bubenhofer, Stephanie B; Grass, Robert N; Luechinger, Norman A; Stark, Wendelin J; Feldman, Kirill; Dora, Claudio

    2012-01-01

    Polyethylene is widely used as a component of implants in medicine. Composites made of high-density polyethylene (HDPE) containing different amounts of amorphous calcium phosphate nanoparticles were investigated concerning their in vitro biomedical performance. The nanoparticles were produced by flame spray synthesis and extruded with HDPE, the latter complying with Food and Drug Administration regulations. Mechanical properties such as Young's modulus and contact angle as well as in vitro biomineralization of the nanocomposites hot-pressed into thin films were evaluated. The deposition of a hydroxyapatite layer occurred upon immersion in simulated body fluid. Additionally, a cell culture study with human mesenchymal stem cells for six weeks allowed a primary assessment of the cytocompatibility. Viability assays (alamarBlue and lactate dehydrogenase detection) proved the absence of cytotoxic effects of the scaffolds. Microscopic images after hematoxylin and eosin staining confirmed typical growth and morphology. A preliminary experiment analyzed the alkaline phosphatase activity after two weeks. These findings motivate further investigations on bioactive HDPE in bone tissue engineering. (paper)

  15. High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO{sub 2} with transition metal additions

    Energy Technology Data Exchange (ETDEWEB)

    Music, Denis, E-mail: music@mch.rwth-aachen.de; Geyer, Richard W.; Hans, Marcus [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, 52074 Aachen (Germany)

    2016-07-28

    To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO{sub 2} with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m{sup −1} K{sup −2} for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO{sub 2} and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

  16. High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO_2 with transition metal additions

    International Nuclear Information System (INIS)

    Music, Denis; Geyer, Richard W.; Hans, Marcus

    2016-01-01

    To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO_2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m"−"1 K"−"2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO_2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

  17. Nanocomposites of high-density polyethylene with amorphous calcium phosphate: in vitro biomineralization and cytocompatibility of human mesenchymal stem cells.

    Science.gov (United States)

    Hild, Nora; Fuhrer, Roland; Mohn, Dirk; Bubenhofer, Stephanie B; Grass, Robert N; Luechinger, Norman A; Feldman, Kirill; Dora, Claudio; Stark, Wendelin J

    2012-10-01

    Polyethylene is widely used as a component of implants in medicine. Composites made of high-density polyethylene (HDPE) containing different amounts of amorphous calcium phosphate nanoparticles were investigated concerning their in vitro biomedical performance. The nanoparticles were produced by flame spray synthesis and extruded with HDPE, the latter complying with Food and Drug Administration regulations. Mechanical properties such as Young's modulus and contact angle as well as in vitro biomineralization of the nanocomposites hot-pressed into thin films were evaluated. The deposition of a hydroxyapatite layer occurred upon immersion in simulated body fluid. Additionally, a cell culture study with human mesenchymal stem cells for six weeks allowed a primary assessment of the cytocompatibility. Viability assays (alamarBlue and lactate dehydrogenase detection) proved the absence of cytotoxic effects of the scaffolds. Microscopic images after hematoxylin and eosin staining confirmed typical growth and morphology. A preliminary experiment analyzed the alkaline phosphatase activity after two weeks. These findings motivate further investigations on bioactive HDPE in bone tissue engineering.

  18. High-field magnetization curve of random-anisotropy amorphous magnet: Observation of a crossover and link to structural short-range order

    Science.gov (United States)

    Filippi, J.; Amaral, V. S.; Barbara, B.

    1991-08-01

    High-field magnetization curves of the series of amorphous alloys DyxGd1-xNi have been measured up to 15 tesla and interpreted in the framework of the theory of Chudnovsky et al. The results show several features (high-field crossovers, correlation volume of local-anisotropy directions, ferromagnetic correlation length) all consistent with each other and in agreement with theoretical predictions.

  19. High-field magnetization curve of random-anisotropy amorphous magnet: Observation of a crossover and link to structural short-range order

    International Nuclear Information System (INIS)

    Filippi, J.; Amaral, V.S.; Barbara, B.

    1991-01-01

    High-field magnetization curves of the series of amorphous alloys Dy x Gd 1-x Ni have been measured up to 15 tesla and interpreted in the framework of the theory of Chudnovsky et al. The results show several features (high-field crossovers, correlation volume of local-anisotropy directions, ferromagnetic correlation length) all consistent with each other and in agreement with theoretical predictions

  20. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  1. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    NARCIS (Netherlands)

    Liu, Y.|info:eu-repo/dai/nl/304831743

    2010-01-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary

  2. High density high performance plasma with internal diffusion barrier in Large Helical Device

    International Nuclear Information System (INIS)

    Sakamoto, R.; Kobayashi, M.; Miyazawa, J.

    2008-10-01

    A attractive high density plasma operational regime, namely an internal diffusion barrier (IDB), has been discovered in the intrinsic helical divertor configuration on the Large Helical Device (LHD). The IDB which enables core plasma to access a high density/high pressure regime has been developed. It is revealed that the IDB is reproducibly formed by pellet fueling in the magnetic configurations shifted outward in major radius. Attainable central plasma density exceeds 1x10 21 m -3 . Central pressure reaches 1.5 times atmospheric pressure and the central β value becomes fairly high even at high magnetic field, i.e. β(0)=5.5% at B t =2.57 T. (author)

  3. Crystalline and amorphous phases in carbon nitride films produced by intense high-pressure plasma

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Orlov, A.V.; Bursill, L.A.; JuLin, P.; Nugent, K.W.; Chon, J.W.; Prawer, S.

    1997-01-01

    Carbon-nitride films are prepared using a high-intensity pulsed plasma deposition technique. A wide range of nitrogen pressure and discharge intensity are used to investigate their effect on the morphology, nitrogen content, structure, bonding, phase composition and mechanical characteristics of the CN films deposited. Increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to maximum of 45 at %. Under the high-energy density deposition conditions which involve ablation of the quartz substrate the CN films are found to incorporate in excess of 60 at %N. Raman spectra of these films contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films deposited below 1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry. (authors)

  4. Development of highly repetitive pulse power system using amorphous metallic cores

    Energy Technology Data Exchange (ETDEWEB)

    Masugata, K; Yatsui, K [Nagaoka Univ. of Technology (Japan). Dept. of Electrical Engineering

    1997-12-31

    A new type of pulse power system has been developed to obtain an efficient highly repetitive pulse-power generation. The system is constructed of a double pulse circuit (1st stage), step-up transformer and Blumlein pulse forming line (BL) and can generate high power pulse of 600 kV, 24 kA, 60 ns. In the system, discharge gap switches are replaced by magnetic switches. In addition, instead of Marx generator, a step-up transformer is utilized to generate high voltage pulse. The system is tested under the double pulse mode where two 1st stage capacitors are connected in parallel and switched with a interval of T{sub d}. The minimum value of T{sub d} is limited by the recovery of 1st stage gap switches and at T{sub d} {>=} 500 {mu}s (equivalent rep-rate of 2 kHz), the system is operated with good reproducibility. To enhance the recovery, magnetic switch is utilized, which enables operation at T{sub d} {>=} 30 {mu}s (equivalent rep-rate of 33 kHz). (author). 7 figs., 7 refs.

  5. High efficiency combined heat and power facilities - benefits and barriers

    International Nuclear Information System (INIS)

    Klein, M.

    2001-01-01

    There are important linkages between the economy, energy production, the environment and our health. Where thermal energy is needed, distributed Combined Heat and Power facilities, using gas turbines, reciprocating engines and future fuel cells can provide significant improvements to our long term mix of energy production. Local generation can also have benefits in security of energy supply and economic savings. This paper is intended to discuss the relevant air pollution and greenhouse gas emissions from modem CHP plants, the emission prevention and reduction methods available, and their operating experience and cost-effectiveness. Mention is made of recently constructed industrial and commercial plants, and institutional barriers to further development. Solutions described for these barriers include the need for more awareness of opportunities, improved access to the electricity grid, the proper design balance between thermal and electric for CHP systems rather than large combined cycles, improved corporate taxation incentives, and the assessment of all environmental and economic benefits when considering such cleaner sources in a restructured energy market. (author)

  6. Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

    International Nuclear Information System (INIS)

    Savchenko, N.D.

    1999-01-01

    The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

  7. Study of thermoelectric power of Co-B liquid quenched amorphous alloys at relatively high temperature

    International Nuclear Information System (INIS)

    Naqvi, S.M.N.R.; Rizvi, S.D.H.; Raza, S.M.; Rizvi, S.; Hussain, A.; Rehman, F.

    1999-01-01

    Measurements of thermoelectric power TEP were carried out for the samples of Co-1 alloy with appropriate compositions of constitutions in the temperature range, 350K< T<760K. The analysis of data shows an inverse Gaussian profile. Ziman theoretical model was used to fit the resistivity data which shows an agreement. Dynamic recovery processes as well as formation of vacancies, interstials, intersection of basal dislocations and indeed pyramidal interlocking of dislocations for seeding scattering centers are responsible for residual TEP at relatively high temperatures Co-B LQA alloys also undergo into other structural changes at such temperatures. (author)

  8. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

    Science.gov (United States)

    Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

    2018-02-01

    This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

  9. Stable amorphous georgeite as a precursor to a high-activity catalyst

    Science.gov (United States)

    Kondrat, Simon A.; Smith, Paul J.; Wells, Peter P.; Chater, Philip A.; Carter, James H.; Morgan, David J.; Fiordaliso, Elisabetta M.; Wagner, Jakob B.; Davies, Thomas E.; Lu, Li; Bartley, Jonathan K.; Taylor, Stuart H.; Spencer, Michael S.; Kiely, Christopher J.; Kelly, Gordon J.; Park, Colin W.; Rosseinsky, Matthew J.; Hutchings, Graham J.

    2016-03-01

    Copper and zinc form an important group of hydroxycarbonate minerals that include zincian malachite, aurichalcite, rosasite and the exceptionally rare and unstable—and hence little known and largely ignored—georgeite. The first three of these minerals are widely used as catalyst precursors for the industrially important methanol-synthesis and low-temperature water-gas shift (LTS) reactions, with the choice of precursor phase strongly influencing the activity of the final catalyst. The preferred phase is usually zincian malachite. This is prepared by a co-precipitation method that involves the transient formation of georgeite; with few exceptions it uses sodium carbonate as the carbonate source, but this also introduces sodium ions—a potential catalyst poison. Here we show that supercritical antisolvent (SAS) precipitation using carbon dioxide (refs 13, 14), a process that exploits the high diffusion rates and solvation power of supercritical carbon dioxide to rapidly expand and supersaturate solutions, can be used to prepare copper/zinc hydroxycarbonate precursors with low sodium content. These include stable georgeite, which we find to be a precursor to highly active methanol-synthesis and superior LTS catalysts. Our findings highlight the value of advanced synthesis methods in accessing unusual mineral phases, and show that there is room for exploring improvements to established industrial catalysts.

  10. Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Panwar, O.S.; Khan, Mohd. Alim; Kumar, Mahesh; Shivaprasad, S.M.; Satyanarayana, B.S.; Dixit, P.N.; Bhattacharyya, R.; Khan, M.Y.

    2008-01-01

    The application of a sufficiently high negative substrate bias, during the growth of tetrahedral amorphous carbon (ta-C), is usually associated with low sp 3 bonding configuration and stressed films. However, in an effort to understand and utilize the higher pseudo thermo dynamical conditions during the film growth, at high negative substrate bias (- 300 V), reported here is a study on ta-C films grown under different hydrogen and nitrogen concentration. As grown ta-C films were studied under different negative substrate bias conditions. The variation of the sp 3 content and sp 3 /sp 2 ratio in the ta-C films exhibits a trend similar to those reported in literature, with a subtle variation in this report being the substrate bias voltage, which was observed to be around - 200 V, for obtaining the highest sp 3 (80%) bonding and sp 3 /sp 2 (3.95) ratio. The hydrogen and nitrogen incorporated ta-C films studied, at a bias of - 300 V, show an increase in sp 3 (87-91%) bonding and sp 3 /sp 2 (7-10) ratio in the range of studies reported. The inference is drawn on the basis of the set of data obtained from measurements carried out using X-ray photoelectron spectroscopy, X-ray induced Auger electron spectroscopy and Raman spectroscopy of as grown and hydrogen and nitrogen incorporated ta-C films deposited using an S bend filtered cathodic vacuum arc system. The study indicates the possibility of further tailoring ta-C film properties and also extending capabilities of the cathodic arc system for developing carbon based films for electronics and tribological applications

  11. Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India)], E-mail: ospanwar@mail.nplindia.ernet.in; Khan, Mohd. Alim [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Kumar, Mahesh; Shivaprasad, S.M. [Surface Physics and Nanostructures Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Satyanarayana, B.S. [MIT Innovation Centre and Electronics and Communication Department, Manipal Institute of Technology, Manipal-579104 (India); Dixit, P.N. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Bhattacharyya, R. [Emeritus Scientist, National Physical Laboratory, New Delhi-110012 (India); Khan, M.Y. [Department of Physics, Jamia Millia Islamia, Central University, New Delhi-110025 (India)

    2008-02-29

    The application of a sufficiently high negative substrate bias, during the growth of tetrahedral amorphous carbon (ta-C), is usually associated with low sp{sup 3} bonding configuration and stressed films. However, in an effort to understand and utilize the higher pseudo thermo dynamical conditions during the film growth, at high negative substrate bias (- 300 V), reported here is a study on ta-C films grown under different hydrogen and nitrogen concentration. As grown ta-C films were studied under different negative substrate bias conditions. The variation of the sp{sup 3} content and sp{sup 3}/sp{sup 2} ratio in the ta-C films exhibits a trend similar to those reported in literature, with a subtle variation in this report being the substrate bias voltage, which was observed to be around - 200 V, for obtaining the highest sp{sup 3} (80%) bonding and sp{sup 3}/sp{sup 2} (3.95) ratio. The hydrogen and nitrogen incorporated ta-C films studied, at a bias of - 300 V, show an increase in sp{sup 3} (87-91%) bonding and sp{sup 3}/sp{sup 2} (7-10) ratio in the range of studies reported. The inference is drawn on the basis of the set of data obtained from measurements carried out using X-ray photoelectron spectroscopy, X-ray induced Auger electron spectroscopy and Raman spectroscopy of as grown and hydrogen and nitrogen incorporated ta-C films deposited using an S bend filtered cathodic vacuum arc system. The study indicates the possibility of further tailoring ta-C film properties and also extending capabilities of the cathodic arc system for developing carbon based films for electronics and tribological applications.

  12. A High-Performance Corrosion-Resistant Iron-Based Amorphous Metal - The Effects of Composition, Structure and Environment on Corrosion Resistance

    International Nuclear Information System (INIS)

    Farmer, J.; Haslam, J.; Day, D.; Lian, T.; Saw, C.; Hailey, P.; Choi, J.S.; Rebak, R.; Yang, N.; Bayles, R.; Aprigliano, L.; Payer, J.; Perepezko, J.; Hildal, K.; Lavernia, E.; Ajdelsztajn, L.; Branagan, D.; Beardsley, B.

    2007-01-01

    The passive film stability of several Fe-based amorphous metal formulations have been found to be comparable to that of high-performance Ni-based alloys, and superior to that of stainless steels, based on electrochemical measurements of the passive film breakdown potential and general corrosion rates. Chromium (Cr), molybdenum (Mo) and tungsten (W) provide corrosion resistance; boron (B) enables glass formation; and rare earths such as yttrium (Y) lower critical cooling rate (CCR). The high boron content of this particular amorphous metal also makes it an effective neutron absorber, and suitable for criticality control applications, as discussed in companion publications. Corrosion data for SAM2X5 (Fe 49.7 Cr 17.7 Mn 1.9 Mo 7.4 W 1.6 B 15.2 C 3.8 Si 2.4 ) is discussed here. (authors)

  13. Amorphous metal composites

    International Nuclear Information System (INIS)

    Byrne, M.A.; Lupinski, J.H.

    1984-01-01

    This patent discloses an improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite

  14. Effects of annealing on the microstructure and magnetic property of the mechanically alloyed FeSiBAlNiM (M=Co, Cu, Ag) amorphous high entropy alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoxia; Zhou, Xuan; Yu, Shuaishuai; Wei, Congcong; Xu, Jing; Wang, Yan, E-mail: mse_wangy@ujn.edu.cn

    2017-05-15

    The effects of annealing treatment on the microstructure, thermal stability, and magnetic properties of the mechanical alloyed FeSiBAlNiM (M=Co, Cu, Ag) amorphous high entropy alloys (HEAs) have been investigated in this project. The simple crystallization products in FeSiBAlNi amorphous HEAs with Co and Ag addition reveal the high phase stability during heating process. At high annealing treatment, the crystallized HEAs possess the good semi-hard magnetic property. It can conclude that crystallization products containing proper FeSi-rich and FeB-rich phases are beneficial to improve the magnetic property. Annealing near the exothermic peak temperature presents the best enhancing effect on the semi-hard magnetic property of FeSiBAlNiCo. It performs both large saturated magnetization and remanence ratio of 13.0 emu/g and near 45%, which exhibit 465% and 105% enhancement compared with as-milled state, respectively. - Highlights: • Co, Cu, Ag additions affect crystallization behavior of FeSiBAlNi amorphous HEAs. • Crystallization products in FeSiBAlNi Co/Ag reveal high phase stability. • Proper FeSi-rich and FeB-rich phases are beneficial to improve magnetic property. • Annealing treatment improves semi-hard magnetic property compared to as-milled state. • Annealing near exothermic peak temperature shows best enhancing effect on magnetism.

  15. Effective and highly recyclable ceramic membrane based on amorphous nanosilica for dye removal from t

    Directory of Open Access Journals (Sweden)

    Gehan M.K. Tolba

    2016-03-01

    Full Text Available In this study, an adsorptive ceramic membrane was prepared by a simple dry pressing of a mixture of nanosilica produced from low cost rice husk by hydrothermal technique at sub-critical water conditions, calcium phosphate, and ammonium acetate together and then calcined at 600 °C in air. Optimization of the raw materials ratio was found to be necessary to avoid crack formation during sintering process. The membrane microstructure, dye removal efficiency and the permeation flux of the membranes were investigated. The membrane was tested to remove the methylene blue from aqueous solution. Results show that the removal of the dye increases as the silica content increases in the all given membranes and it decreases with an increase in the ammonium acetate. Moreover, the water flux decreases with an increase in the silica content. The methylene blue adsorbed onto the silica membrane can be removed by calcination and the membrane could be recycled several times without any obvious loss in the adsorption performance. In conclusion, this study demonstrates a convenient strategy to prepare an effective adsorptive membrane, which can be applied as a highly recyclable membrane for the adsorption of organic maters.

  16. Application of High-Velocity Oxygen-Fuel (HVOF Spraying to the Fabrication of Yb-Silicate Environmental Barrier Coatings

    Directory of Open Access Journals (Sweden)

    Emine Bakan

    2017-04-01

    Full Text Available From the literature, it is known that due to their glass formation tendency, it is not possible to deposit fully-crystalline silicate coatings when the conventional atmospheric plasma spraying (APS process is employed. In APS, rapid quenching of the sprayed material on the substrate facilitates the amorphous deposit formation, which shrinks when exposed to heat and forms pores and/or cracks. This paper explores the feasibility of using a high-velocity oxygen-fuel (HVOF process for the cost-effective fabrication of dense, stoichiometric, and crystalline Yb2Si2O7 environmental barrier coatings. We report our findings on the HVOF process optimization and its resultant influence on the microstructure development and crystallinity of the Yb2Si2O7 coatings. The results reveal that partially crystalline, dense, and vertical crack-free EBCs can be produced by the HVOF technique. However, the furnace thermal cycling results revealed that the bonding of the Yb2Si2O7 layer to the Silicon bond coat needs to be improved.

  17. Efficient free energy calculations for compounds with multiple stable conformations separated by high energy barriers

    NARCIS (Netherlands)

    Hritz, J.; Oostenbrink, C.

    2009-01-01

    Compounds with high intramolecular energy barriers represent challenging targets for free energy calculations because of the difficulty to obtain sufficient conformational sampling. Existing approaches are therefore computationally very demanding, thus preventing practical applications for such

  18. One Component Encapsulating Material Matrix as High Barrier Coating, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — To address the NASA need for new flexible food packaging materials with effective high barrier against oxygen and moisture to protect food, minimize weight and...

  19. The Barriers to High-Quality Inpatient Pain Management: A Qualitative Study.

    Science.gov (United States)

    Lin, Richard J; Reid, M Carrington; Liu, Lydia L; Chused, Amy E; Evans, Arthur T

    2015-09-01

    The current literature suggests deficiencies in the quality of acute pain management among general medical inpatients. The aim of this qualitative study is to identify potential barriers to high-quality acute pain management among general medical inpatients at an urban academic medical center during a 2-year period. Data are collected using retrospective chart reviews, survey questionnaires, and semistructured, open-ended interviews of 40 general medical inpatients who have experienced pain during their hospitalization. Our results confirm high prevalence and disabling impacts of pain and significant patient- and provider-related barriers to high-quality acute pain management. We also identify unique system-related barriers such as time delay and pain management culture. Efforts to improve the pain management experience of general medical inpatients will need to address all these barriers. © The Author(s) 2014.

  20. Facile fabrication of CNTs@C@MoSe2@Se hybrids with amorphous structure for high performance anode in lithium-ion batteries.

    Science.gov (United States)

    Jin, Rencheng; Cui, Yuming; Wang, Qingyao; Li, Guihua

    2017-12-15

    Amorphous MoSe 2 and Se anchored on amorphous carbon coated multiwalled carbon nanotubes (CNTs@C@MoSe 2 @Se) have been synthesized by a facile solvothermal strategy. The one dimensional CNTs@C@MoSe 2 @Se can effectively buffer the volume variation, prohibit the aggregation and facilitate electron and ion transport throughout the electrode. Furthermore, the combination of MoSe 2 and Se also provides buffer spaces for the volumetric change during cycling. Thus, the obtained CNTs@C@MoSe 2 @Se hybrids display the enhanced cycle stability and excellent high rate capacity. The reversible capacity of 1010mAhg -1 can be achieved after 100 cycles at the current density of 0.1Ag -1 . Even after 500 cycles, a reversible capacity of 508mAhg -1 is still retained at 5Ag -1 . Copyright © 2017 Elsevier Inc. All rights reserved.

  1. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  2. Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

    Science.gov (United States)

    Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

    2017-12-01

    Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Project Guarantee 1985. Final repository for high-level radioactive wastes: The system of safety barriers

    International Nuclear Information System (INIS)

    Anon.

    1985-01-01

    Final disposal of radioactive waste involves preventing the waste from returning from the repository location into the biosphere by means of successively arranged containment measures known as safety barriers. In the present volume NGB 85-04 of the series of reports for Project 'Guarantee' 1985, the safety barrier system for the type C repository for high-level waste is described. The barrier parameters which are relevant for safety analysis are quantified and associated error limits and data scatter are given. The aim of the report is to give a summary documentation of the safety analysis input data and their scientific background. For secure containment of radioactive waste safety barriers are used which effectively limit the release of radioactive material from the repository (release barriers) and effectively retard the entry of the original radioactive material into the biosphere (time barriers). Safety barriers take the form of both technically constructed containment measures and the siting of the repository in suitable geological formations. The technical safety barrier system in the case of high-level waste comprises: the waste solidification matrix (borosilicate glass), massive steel canisters, encasement of the waste canisters, encasement of the waste canisters in highly compacted bentonite, sealing of vacant storage space and access routes on repository closure. The natural geological safety barriers - the host rock and overlying formations provide sufficiently long deep groundwater flow times from the repository location to the earth's surface and for additional lengthening of radionuclide migration times by means of various chemical and physical retardation mechanisms. The stability of the geological formations is so great that hydrogeological system is protected for a sufficient length of time from deterioration caused, in particular, by erosion. Observations in the final section of the report indicate that input data for the type C repository safety

  4. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  5. Analysis of administrative barriers in the industry of the high-rise construction in Russian Federation

    Science.gov (United States)

    Zaychenko, Irina; Borremans, Alexandra; Gutman, Svetlana

    2018-03-01

    The article describes the concept and types of administrative barriers encountered in various areas of the enterprise. The particularities of the Russian high-rise construction industry are described and a comparative analysis of administrative barriers in this sector is performed. The main stages and administrative procedures when the developers implement investment and construction projects in the field of high-rise construction are determined. The regulatory and legal framework for the implementation of investment and project activities in the high-rise construction industry has been studied and conclusions have been drawn on its low level of precision in the issue of the formation of competitive and efficient high-rise construction markets. The average number of administrative procedures for the implementation of the investment and construction project in the field of high-rise construction is determined. The factors preventing the reduction of administrative barriers in the high-rise construction industry are revealed.

  6. A high rotational barrier for physisorbed hydrogen in an fcu-metal-organic framework

    KAUST Repository

    Pham, Tony T.; Forrest, Katherine A.; Georgiev, Peter A L; Lohstroh, Wiebke; Xue, Dongxu; Hogan, Adam; Eddaoudi, Mohamed; Space, Brian; Eckert, Juergen

    2014-01-01

    A combined inelastic neutron scattering (INS) and theoretical study of H2 sorption in Y-FTZB, a recently reported metal-organic framework (MOF) with fcu topology, reveals that the strongest binding site in the MOF causes a high barrier to rotation on the sorbed H2. This rotational barrier for H2 is the highest yet of reported MOF materials based on physisorption. This journal is

  7. High rates of hybridisation reveal fragile reproductive barriers between endangered Australian sea snakes

    DEFF Research Database (Denmark)

    Sanders, Kate L; Redsted Rasmussen, Arne; Guinea, Michael L.

    2014-01-01

    designations, but revealed high frequencies of hybrids on all four reefs and individuals of pure A. fuscus ancestry only at Scott and (historically) Ashmore. Most unexpectedly, 95% of snakes sampled at Hibernia were hybrids that resembled A. laevis in phenotype, revealing a collapse of reproductive barriers...... (‘reverse speciation’) at this reef. These results have dire implications for the conservation status of A. fuscus, and highlight the fragility of reproductive barriers in a recent marine radiation....

  8. Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

    Science.gov (United States)

    Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

    2017-11-01

    The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

  9. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

    Science.gov (United States)

    Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

    2016-12-21

    Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

  10. Influence of torsion and tensile stress on magnetoimpedance effect in Fe-rich amorphous microwires at high frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, C. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20018 San Sebastian (Spain)]. E-mail: wubgagac@sc.ehu.es; Chizhik, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20018 San Sebastian (Spain); Zhukov, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20018 San Sebastian (Spain); Zhukova, V. [TAMAG Iberica S. L. Parque Tecnologico de Miramon, Paseo Mikeletegi 56, 1a Planta, 20009 San Sebastian (Spain); Gonzalez, J. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20018 San Sebastian (Spain); Blanco, J.M. [Dpto. Fisica Aplicada I. EUPDS, UPV/EHU, Plaza Europa 1, 20018 San Sebastian (Spain); Panina, L.V. [University of Plymouth, Drakes Circus, Plymouth (United Kingdom)

    2007-09-15

    In this work, we study the magnetoimpedance response under tensile and torsional stress of Fe{sub 76}B{sub 13}Si{sub 11} glass-coated amorphous microwires (with the metallic nucleus diameter of 17 {mu}m) prepared by Taylor-Ulitovski method. The impedance was evaluated using a Network Analyser in the frequency range of 10-500 MHz. In order to induce a helical magnetic anisotropy that modifies the magnetic domain structure and the magnetic response of the sample, the torsion stresses have been applied. The effect of such torsion on giant magnetoimpedance (GMI) has been studied in a Fe-rich amorphous microwire as a function of the driving current frequency. Unusual behaviour of the GMI with torsion has been observed up to 500 MHz: at this frequency, the change from double-peak to single-peak behaviour has been observed. It could be ascribed to changes on domain structures and surface anisotropy induced by applied torsion. For this frequency range, an abrupt decrease of the impedance with torsion has been observed. We have also studied the tensile-induced changes of GMI effect in a Fe-rich amorphous microwire. The GMI effect increases with applied tensile stress and with the frequency of AC current. Observed dependences could be attributed to the change of the overall magnetic anisotropy under applied torsion.

  11. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    International Nuclear Information System (INIS)

    Huang, Y.J.; Shen, J.; Sun, J.F.; Yu, X.B.

    2007-01-01

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti 41.5 Zr 2.5 Hf 5 Cu 42.5-x Ni 7.5 Si 1 Sn x (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy. The activation energies for glass transition and crystallization for Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy also possesses superior mechanical properties

  12. Investigation of the intermediate- and high-density forms of amorphous ice by molecular dynamics calculations and diffraction experiments

    International Nuclear Information System (INIS)

    Tse, John S.; Klug, Dennis D.; Guthrie, Malcolm; Benmore, Chris J.; Urquidi, Jacob; Tulk, Chris A.

    2005-01-01

    The lack of an 'isosbestic' point in the oxygen-oxygen atom radial distribution functions (RDFs) for the HDA→LDA ice transformation at ambient pressure derived from molecular dynamics (MD) calculations show unequivocally that intermediate phases are not equilibrium mixtures of these two amorphous forms. This is supported by x-ray structure factor data, where it is found that linear combinations of the starting and end amorphous forms do not describe intermediate forms of amorphous ice formed during the transformation. This reflects the fact that the x-ray data are heavily weighted to O-O correlations and therefore sensitive to the basic structural changes that occur during the relaxation process. The ice Ih→HDA transformation is also reexamined using MD to identify its thermodynamic nature. This apparently first-order transition induced by a mechanical instability is investigated by compression followed by decompression to negative pressures. In this study we demonstrated that the full van der Waals loop for this transition can be identified

  13. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Science.gov (United States)

    Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

    2014-01-01

    In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

  14. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  15. Barriers to health education in adolescents: health care providers' perspectives compared to high school adolescents.

    Science.gov (United States)

    Abedian, Kobra; Shahhosseini, Zohreh

    2015-11-01

    Although adolescence is marked by profound and dynamic changes, it is virtually neglected by health care providers, by society, and even by most parents, teachers, and health professionals. The aim of this study was to investigate barriers to health education in adolescents from health care providers' views compared to teens. The study population consisted of 72 health care providers and 402 high school female students in Northern Iran in 2012. They completed a self-administered questionnaire about their views on barriers to adolescents' health education. It is revealed that the major barrier to adolescents' health education from a health care providers' perspective is "Lack of private room for adolescents' health education", while "Lack of adolescents' interest to content of educational programs" is a significantly greater barrier to health education among adolescents. The results suggest that for adolescent health education, specific strategies should be used in adolescent health promotion programs.

  16. Pressure Amplification Off High Impedance Barriers in DDT

    Energy Technology Data Exchange (ETDEWEB)

    Heatwole, Eric Mann [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Broilo, Robert M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Kistle, Trevin Joseph [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Parker, Gary Robert Jr. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2018-04-23

    The Deflagration-to-Detonation Transition (DDT) in one-dimensional porous explosive, where combustion in an explosive transitions to detonation, can be described by the following model. This simplified model proceeds in five steps, as follows: 1) Ignition of the explosive, surface burning. 2) Convective burning, with the flame front penetrating through the porous network of the explosive. This proceeds until the pressure grows high enough to result in choked flow in the pores restricting the convective burn. 3) The choked flow results in the formation of a high-density compact of explosive. This compact is driven into undisturbed material by the pressure of the burning explosive. See Figure1. 4) The compression of the undisturbed porous explosive by the compact leads to the ignition of a compressive burn. This builds in pressure until a supported shock forms. 5) The shock builds in pressure until detonation occurs. See Figure 2 for an overview streak of the proceeding steps.

  17. Saudi high school students' attitudes and barriers toward the use of computer technologies in learning English.

    Science.gov (United States)

    Sabti, Ahmed Abdulateef; Chaichan, Rasha Sami

    2014-01-01

    This study examines the attitudes of Saudi Arabian high school students toward the use of computer technologies in learning English. The study also discusses the possible barriers that affect and limit the actual usage of computers. Quantitative approach is applied in this research, which involved 30 Saudi Arabia students of a high school in Kuala Lumpur, Malaysia. The respondents comprised 15 males and 15 females with ages between 16 years and 18 years. Two instruments, namely, Scale of Attitude toward Computer Technologies (SACT) and Barriers affecting Students' Attitudes and Use (BSAU) were used to collect data. The Technology Acceptance Model (TAM) of Davis (1989) was utilized. The analysis of the study revealed gender differences in attitudes toward the use of computer technologies in learning English. Female students showed high and positive attitudes towards the use of computer technologies in learning English than males. Both male and female participants demonstrated high and positive perception of Usefulness and perceived Ease of Use of computer technologies in learning English. Three barriers that affected and limited the use of computer technologies in learning English were identified by the participants. These barriers are skill, equipment, and motivation. Among these barriers, skill had the highest effect, whereas motivation showed the least effect.

  18. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  19. Thermal Conductivity and Wear Behavior of HVOF-Sprayed Fe-Based Amorphous Coatings

    Directory of Open Access Journals (Sweden)

    Haihua Yao

    2017-10-01

    Full Text Available To protect aluminum parts in vehicle engines, metal-based thermal barrier coatings in the form of Fe59Cr12Nb5B20Si4 amorphous coatings were prepared by high velocity oxygen fuel (HVOF spraying under two different conditions. The microstructure, thermal transport behavior, and wear behavior of the coatings were characterized simultaneously. As a result, this alloy shows high process robustness during spraying. Both Fe-based coatings present dense, layered structure with porosities below 0.9%. Due to higher amorphous phase content, the coating H-1 exhibits a relatively low thermal conductivity, reaching 2.66 W/(m·K, two times lower than the reference stainless steel coating (5.85 W/(m·K, indicating a good thermal barrier property. Meanwhile, the thermal diffusivity of amorphous coatings display a limited increase with temperature up to 500 °C, which guarantees a steady and wide usage on aluminum alloy. Furthermore, the amorphous coating shows better wear resistance compared to high carbon martensitic GCr15 steel at different temperatures. The increased temperature accelerating the tribological reaction, leads to the friction coefficient and wear rate of coating increasing at 200 °C and decreasing at 400 °C.

  20. Quantitative performance allocation of multi-barrier system for high-level radioactive waste disposal

    International Nuclear Information System (INIS)

    Ahn, Joon-Hong; Ikeda, Takao; Ohe, Toshiaki

    1995-01-01

    Performance assessment of each barrier consisting of geologic disposal system for high-level radioactive wastes is carried out quantitatively, and key radionuclides and parameters are pointed out. Chemical compositions and solubilities of radionuclides under repository conditions are determined by PHREEQE code staring from compositions of granitic groundwater observed in Japan. Glass dissolution analysis based on mass transfer theory and precipitation analysis have been done in order to determine the inner boundary condition for radionuclide diffusion through a bentonite-filled buffer region, where multi-member decay chain and isotopic sharing of solubility at the inner boundary are considered. Natural barrier is treated as homogeneous porous rock, or porous rock with infinite planar fractures. Performance of each barrier is evaluated in terms of non-dimensionalized hazard defined as the ratio of annual radioactivity release from each barrier to the annual limit on intake. At the outer edge of the engineered barriers, 239 Pu is the key unclide to the performance, whereas at the exit of the natural barrier, weakly-sorbing fission product nuclides such as 135 Cs, 129 I and 99 Tc dominate the hazard. (author) 50 refs

  1. Photocatalytic performance of highly amorphous titania–silica aerogels with mesopores: The adverse effect of the in situ adsorption of some organic substrates during photodegradation

    Energy Technology Data Exchange (ETDEWEB)

    Lázár, István [Department of Inorganic and Analytical Chemistry, University of Debrecen, Egyetem tér 1 H-4032 (Hungary); Kalmár, József, E-mail: kalmar.jozsef@science.unideb.hu [MTA-DE Homogeneous Catalysis and Reaction Mechanisms Research Group, Egyetem tér 1 H-4032 (Hungary); Peter, Anca [Department of Chemistry and Biology, Technical University of Cluj Napoca, North University Center of Baia Mare, Baia Mare, Victoriei 76, 430122 (Romania); Szilágyi, Anett; Győri, Enikő; Ditrói, Tamás; Fábián, István [Department of Inorganic and Analytical Chemistry, University of Debrecen, Egyetem tér 1 H-4032 (Hungary)

    2015-11-30

    Graphical abstract: - Highlights: • Details on the preparation of titania–silica aerogels with no crystalline anatase phase. • Investigation of the structure and the photocatalytic activity of highly amorphous titania–silica aerogels with mesopores. • The fast adsorption of methylene blue and salicylic acid reduces the rates of their photocatalytic degradations. • An elaborate kinetic model which incorporates both adsorption and photocatalysis. - Abstract: Titania–silica composite aerogels with 16–29% Ti-content by the mass were synthesized by the sol–gel method from different Ti-precursors, and calcined at 500 °C. These aerogels are highly amorphous as no crystalline TiO{sub 2} phase can be detected in them by X-ray diffraction methods, and show the dominating presence of either mesopores or macropores. The incorporation of Ti into the silica structure is shown by the appearance of characteristic IR transitions of Si−O−Ti vibrations. The characteristic band-gap energies of the different aerogels are estimated to be between 3.6 and 3.9 eV from UV reflection spectra. Band-gap energy decreases with decreasing pore-size. When suspended in solution, even these highly amorphous aerogels accelerate the photodegradation of salicylic acid and methylene blue compared to simple photolysis. Kinetic experiments were conducted under illumination, and also in the dark to study the adsorption of the substrates onto the suspended aerogels. We assume that the fast in situ adsorption of the organic substrates mask the suspended aerogel particles from UV photons, which reduces the rate of photocatalysis. We managed to mathematically separate the parallel processes of photocatalysis and adsorption, and develop a simple kinetic model to describe the reaction system.

  2. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  3. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Y.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shen, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: junshen@hit.edu.cn; Sun, J.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yu, X.B. [Lab of Energy Science and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: yuxuebin@hotmail.com

    2007-01-16

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 42.5-x}Ni{sub 7.5}Si{sub 1}Sn {sub x} (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy. The activation energies for glass transition and crystallization for Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy also possesses superior mechanical properties.

  4. Theory of amorphous ices.

    Science.gov (United States)

    Limmer, David T; Chandler, David

    2014-07-01

    We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens.

  5. A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy; Contribution a l`etude des mecanismes de transport dans les materiaux metalliques amorphes: diffusion et diffusion sous pression dans NiZr amorphe

    Energy Technology Data Exchange (ETDEWEB)

    Grandjean, A.

    1996-03-01

    The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom{sup 3}. Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author).

  6. Neutron irradiation induced amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Hay, J.C.

    1998-01-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

  7. Amorphous Ultrathin SnO2 Films by Atomic Layer Deposition on Graphene Network as Highly Stable Anodes for Lithium-Ion Batteries.

    Science.gov (United States)

    Xie, Ming; Sun, Xiang; George, Steven M; Zhou, Changgong; Lian, Jie; Zhou, Yun

    2015-12-23

    Amorphous SnO2 (a-SnO2) thin films were conformally coated onto the surface of reduced graphene oxide (G) using atomic layer deposition (ALD). The electrochemical characteristics of the a-SnO2/G nanocomposites were then determined using cyclic voltammetry and galvanostatic charge/discharge curves. Because the SnO2 ALD films were ultrathin and amorphous, the impact of the large volume expansion of SnO2 upon cycling was greatly reduced. With as few as five formation cycles best reported in the literature, a-SnO2/G nanocomposites reached stable capacities of 800 mAh g(-1) at 100 mA g(-1) and 450 mAh g(-1) at 1000 mA g(-1). The capacity from a-SnO2 is higher than the bulk theoretical values. The extra capacity is attributed to additional interfacial charge storage resulting from the high surface area of the a-SnO2/G nanocomposites. These results demonstrate that metal oxide ALD on high surface area conducting carbon substrates can be used to fabricate high power and high capacity electrode materials for lithium-ion batteries.

  8. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  9. Amorphous and liquid samples structure and density measurements at high pressure - high temperature using diffraction and imaging techniques

    Science.gov (United States)

    Guignot, N.; King, A.; Clark, A. N.; Perrillat, J. P.; Boulard, E.; Morard, G.; Deslandes, J. P.; Itié, J. P.; Ritter, X.; Sanchez-Valle, C.

    2016-12-01

    Determination of the density and structure of liquids such as iron alloys, silicates and carbonates is a key to understand deep Earth structure and dynamics. X-ray diffraction provided by large synchrotron facilities gives excellent results as long as the signal scattered from the sample can be isolated from its environment. Different techniques already exist; we present here the implementation and the first results given by the combined angle- and energy-dispersive structural analysis and refinement (CAESAR) technique introduced by Wang et al. in 2004, that has never been used in this context. It has several advantages in the study of liquids: 1/ the standard energy-dispersive technique (EDX), fast and compatible with large multi-anvil presses frames, is used for fast analysis free of signal pollution from the sample environment 2/ some limitations of the EDX technique (homogeneity of the sample, low resolution) are irrelevant in the case of liquid signals, others (wrong intensities, escape peaks artifacts, background subtraction) are solved by the CAESAR technique 3/ high Q data (up to 15 A-1 and more) can be obtained in a few hours (usually less than 2). We present here the facilities available on the PSICHE beamline (SOLEIL synchrotron, France) and a few results obtained using a Paris-Edinburgh (PE) press and a 1200 tons load capacity multi-anvil press with a (100) DIA compression module. X-ray microtomography, used in conjunction with a PE press featuring rotating anvils (RotoPEc, Philippe et al., 2013) is also very effective, by simply measuring the 3D volume of glass or liquid spheres at HPHT, thus providing density. This can be done in conjunction with the CAESAR technique and we illustrate this point. Finally, absorption profiles can be obtained via imaging techniques, providing another independent way to measure the density of these materials. References Y. Wang et al., A new technique for angle-dispersive powder diffraction using an energy

  10. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    Science.gov (United States)

    Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  11. High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

    International Nuclear Information System (INIS)

    Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

    2014-01-01

    Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

  12. Application of CFRP with High Hydrogen Gas Barrier Characteristics to Fuel Tanks of Space Transportation System

    Science.gov (United States)

    Yonemoto, Koichi; Yamamoto, Yuta; Okuyama, Keiichi; Ebina, Takeo

    In the future, carbon fiber reinforced plastics (CFRPs) with high hydrogen gas barrier performance will find wide applications in all industrial hydrogen tanks that aim at weight reduction; the use of such materials will be preferred to the use of conventional metallic materials such as stainless steel or aluminum. The hydrogen gas barrier performance of CFRP will become an important issue with the introduction of hydrogen-fuel aircraft. It will also play an important role in realizing fully reusable space transportation system that will have high specific tensile CFRP structures. Such materials are also required for the manufacture of high-pressure hydrogen gas vessels for use in the fuel cell systems of automobiles. This paper introduces a new composite concept that can be used to realize CFRPs with high hydrogen gas barrier performance for applications in the cryogenic tanks of fully reusable space transportation system by the incorporation of a nonmetallic crystal layer, which is actually a dense and highly oriented clay crystal laminate. The preliminary test results show that the hydrogen gas barrier characteristics of this material after cryogenic heat shocks and cyclic loads are still better than those of other polymer materials by approximately two orders of magnitude.

  13. Development of high performance Schottky barrier diode and its application to plasma diagnostics

    International Nuclear Information System (INIS)

    Fujita, Junji; Kawahata, Kazuo; Okajima, Shigeki

    1993-10-01

    At the conclusion of the Supporting Collaboration Research on 'Development of High Performance Detectors in the Far Infrared Range' carried out from FY1990 to FY1992, the results of developing Schottky barrier diode and its application to plasma diagnostics are summarized. Some remarks as well as technical know-how for the correct use of diodes are also described. (author)

  14. Ugandan Immigrant Students' Perceptions of Barriers to Academic Achievement in American High Schools

    Science.gov (United States)

    Ssekannyo, Denis

    2010-01-01

    In a world that is now a global village, enterprising individuals, especially from Third World countries, who make it to greener pastures do not leave their children behind. But with a long list of barriers to academic achievement associated with immigrant and minority students in American high schools, an understanding of the experiences and…

  15. High-Risk Smoking Behaviors and Barriers to Smoking Cessation Among Homeless Individuals.

    Science.gov (United States)

    Chen, Joseph S; Nguyen, Austin Huy; Malesker, Mark A; Morrow, Lee E

    2016-05-01

    Although tobacco practices and the effects of tobacco use among the general American population are well described, minimal data exist regarding tobacco use and barriers to smoking cessation among homeless individuals. Anonymous, voluntary surveys based on a previously implemented instrument were completed by 100 smoking individuals residing at a homeless shelter. These surveys assessed high-risk smoking behaviors and respondents' perceived barriers to long-term smoking cessation. Ninety percent of study participants reported engaging in at least one of the high-risk tobacco practices. Nicotine replacement therapy was perceived by respondents to be the most desired form of smoking cessation aid. Excessive stress with use of tobacco smoking to alleviate stress and anxiety was the most significant self-perceived barrier to smoking cessation. High-risk tobacco practices are remarkably common among smoking homeless individuals. Despite literature consistently showing that non-nicotine tobacco cessation pharmacotherapies (varenicline, buproprion) have higher smoking cessation rates, nicotine replacement monotherapy was perceived as more valuable by survey respondents. Although lack of financial resources was expected to be the biggest barrier to successful cessation, social stressors and the use of smoking to cope with homelessness were perceived as a greater obstacle in this cohort. Given the paucity of data on the long-term effects of the high-risk tobacco behaviors reported by these homeless smokers, this study highlights the need for further investigations regarding tobacco use and tobacco cessation in this vulnerable population. Copyright © 2016 by Daedalus Enterprises.

  16. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO_2 using the induced and secondary current measurements

    International Nuclear Information System (INIS)

    Said, K.; Moya, G.; Si Ahmed, A.; Damamme, G.; Kallel, A.

    2016-01-01

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO_2 achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO_2 is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10"1"0 s"−"1) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  17. Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

    Directory of Open Access Journals (Sweden)

    J. B. Kim

    2012-03-01

    Full Text Available We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs.

  18. Amorphization of metals by ion implantation and ion beam mixing

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Heera, V.

    1988-01-01

    Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

  19. Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Prager, L., E-mail: lutz.prager@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Helmstedt, U. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Herrnberger, H. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Kahle, O. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany); Kita, F. [AZ Electronic Materials Germany GmbH, Rheingaustraße 190-196, 65203 Wiesbaden (Germany); Münch, M. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Pender, A.; Prager, A.; Gerlach, J.W. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Stasiak, M. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany)

    2014-11-03

    Based on results of preceding research and development, thin gas barriers were made by wet application of perhydropolysilazane solution onto polymer films and its subsequent photo-initiated conversion to dense silica layers applying vacuum ultraviolet irradiation. Compared to the state of the art, these layers were sufficiently improved and characterized by spectroscopic methods, by scanning electron microscopy and by gas permeation measurements. Water vapor transmission rates (WVTR) below 10{sup −2} g m{sup −2} d{sup −1} were achieved. In this way, single barrier films were developed and produced on a pilot plant from roll to roll, 250 mm wide, at speeds up to 10 m min{sup −1}. Two films were laminated using adhesives curable with ultraviolet (UV) light and evaluated by peel tests, gas permeation measurement and climate testing. It could be shown that the described high-barrier laminates which exhibit WVTR ≈ 5 × 10{sup −4} g m{sup −2} d{sup −1}, determined by the calcium mirror method, are suitable for encapsulation of flexible thin-film photovoltaic modules. Durability of the encapsulated modules could be verified in several climate tests including damp-heat, thermo-cycle (heating, freezing, wetting) and UV exposures which are equivalent to more than 20 years of endurance at outdoor conditions in temperate climate. In the frame of further research and technical development it seems to be possible to design a cost efficient industrial scale process for the production of encapsulation films for photovoltaic applications. - Highlights: • Dense silica barrier layers were developed by a photochemical approach. • Polymer based barrier films were laminated yielding flexible high-barrier films. • Using these laminates photovoltaic test modules were encapsulated and tested. • A durability of more than 20 years at outdoor conditions could be proved.

  20. A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Isherwood, Patrick J. M., E-mail: P.J.M.Isherwood@lboro.ac.uk; Walls, John M. [CREST, School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Butler, Keith T.; Walsh, Aron [Centre for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

    2015-09-14

    The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO{sub 2}. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a “compositional mobility edge.” Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.

  1. Probing Amorphous Components in High Temperature TE Materials by in situ Total Scattering and the Pair Distribution Function (PDF) Method

    DEFF Research Database (Denmark)

    Reardon, Hazel; Iversen, Bo Brummerstedt; Blichfeld, Anders Bank

    -I clathrate Ba8Ga16Ge30. This suggests that local structure reorientations in the cage are likely to be the root cause of the degradation of the structure. This deepens our understanding of disordered clathrates, and provides evidence that the PDF technique is an effective method for probing local structure.......e., by measuring both the Bragg and diffuse scattering from a sample. This method has rarely been exploited by the non-oxide thermoelectrics community. , , Treating total scattering data by the Pair Distribution Function method is a logical approach to understanding defects, disorder and amorphous components...... to heating cycles, then we are closer to distinguishing how we may generate materials that do not undergo specific structure reorientation processes, and/or how we may mitigate them before they occur. Here, we will present a total scattering and PDF study that probes the local structure of the Type...

  2. Amorphous-like interfacial layer between a high-Tc superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Kim, Bongjun; Kim, Hyuntak; Nagai, Takuro; Matsui, Yoshio; Horiuchi, Shigeo; Jeong, Daeyeong; Deinhofer, Christian; Gritzner, Gerhard; Kim, Youngmin; Kim, Younjoong

    2006-01-01

    The thin amorphous-like layer, formed at the interface between a high-T c superconducting (Tl 0.5 , Pb 0.5 )(Sr 0.8 , Ba 0.2 )Ca 2 Cu 3 O y (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO 2 + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

  3. Amorphous-like interfacial layer between a high-T{sub c} superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Kim, Hyuntak [Electronics and Tele-Communications Research Institute, Daejeon (Korea, Republic of); Nagai, Takuro; Matsui, Yoshio [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Horiuchi, Shigeo; Jeong, Daeyeong [Electrotechnology Research Institute, Changwon (Korea, Republic of); Deinhofer, Christian; Gritzner, Gerhard [Johannes Kepler University, Linz (Austria); Kim, Youngmin; Kim, Younjoong [Electron Microscopy Team, Korea Basic Science Institute, Daejeon (Korea, Republic of)

    2006-05-15

    The thin amorphous-like layer, formed at the interface between a high-T{sub c} superconducting (Tl{sub 0.5}, Pb{sub 0.5})(Sr{sub 0.8}, Ba{sub 0.2})Ca{sub 2}Cu{sub 3}O{sub y} (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO{sub 2} + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

  4. Ultra-soft magnetic Co-Fe-B-Si-Nb amorphous alloys for high frequency power applications

    Science.gov (United States)

    Ackland, Karl; Masood, Ansar; Kulkarni, Santosh; Stamenov, Plamen

    2018-05-01

    With the continuous shrinkage of the footprint of inductors and transformers in modern power supplies, higher flux, while still low-loss metallic replacements of traditional ferrite materials are becoming an intriguing alternative. One candidate replacement strategy is based on amorphous CoFeBSi soft-magnetic alloys, in their metallic glass form. Here the structural and magnetic properties of two different families of CoFeBSi-based soft magnetic alloys, prepared by arc-melting and subsequent melt spinning (rapid quenching) are presented, targeting potential applications at effective frequencies of 100 kHz and beyond. The nominal alloy compositions are Co67Fe4B11Si16Mo2 representing commercial Vitrovac and Co72-xFexB28-y (where B includes non-magnetic elements such as Boron, Silicon etc. x varies between 4 and 5 % and y is varied from 0 to 2 %) denoted Alloy #1 and prepared as a possible higher performance alternative, i.e. lower power loss and lower coercivity, to commercial Vitrovac. Room temperature magnetization measurements of the arc-melted alloys reveal that compared to Vitrovac, Alloy #1 already presents a ten-fold decrease in coercivity, with Hc ˜ 1.4 Am-1 and highest figure of merit of (Ms/Hc > 96). Upon melt-spinning the alloys into thin (< 30 μm) ribbons, the alloys are essentially amorphous when analyzed by XRD. Magnetization measurements of the melt-spun ribbons demonstrate that Alloy #1 possesses a coercivity of just 2 Am-1, which represents a significant improvement compared to melt-spun ribbons of Vitrovac (17 Am-1). A set of prototype transformers of approximately 10 turns of Alloy #1 ribbon exhibits systematically Hc < 10 Am-1 at 100 kHz, without a noticeable decrease in coupled flux and saturation.

  5. Electra-Slate proposal to develop an amorphous PV roofslate

    International Nuclear Information System (INIS)

    Bouverat, P.R.

    2000-01-01

    The objective of this project has been to create a photovoltaic roofing product, the Electra-Slate, that appears physically and dimensionally to conform with a standard pattern, but is designed in a way that any roofer could install the device with total safety on an existing truss, rafter, felt and batten construction roof without additional training and supervision. This has been achieved by developing new concepts in high voltage Amorphous Silicon plate, with in built series connections, and by making an inboard parallel bus connection system, which is self connecting during normal roofing placement. The remaining barriers to be overcome are further reductions in cost and increased output. These two effects combine to form the barrier of installed cost/kilowatt. However it is clear that cost/m 2 is already more competitive for this type of product than for a 'PV' module type of product. (author)

  6. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

    Science.gov (United States)

    Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

    2014-12-24

    We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

  7. Stability of Hydrogen-Bonded Supramolecular Architecture under High Pressure Conditions: Pressure-Induced Amorphization in Melamine-Boric Acid Adduct

    International Nuclear Information System (INIS)

    Wang, K.; Duan, D.; Wang, R.; Lin, A.; Cui, Q.; Liu, B.; Cui, T.; Zou, B.; Zhang, X.

    2009-01-01

    The effects of high pressure on the structural stability of the melamine-boric acid adduct (C3N6H6 2H3BO3, M 2B), a three-dimensional hydrogen-bonded supramolecular architecture, were studied by in situ synchrotron X-ray diffraction (XRD) and Raman spectroscopy. M 2B exhibited a high compressibility and a strong anisotropic compression, which can be explained by the layerlike crystal packing. Furthermore, evolution of XRD patterns and Raman spectra indicated that the M 2B crystal undergoes a reversible pressure-induced amorphization (PIA) at 18 GPa. The mechanism for the PIA was attributed to the competition between close packing and long-range order. Ab initio calculations were also performed to account for the behavior of hydrogen bonding under high pressure.

  8. Imbalance of gut microbiome and intestinal epithelial barrier dysfunction in patients with high blood pressure.

    Science.gov (United States)

    Kim, Seungbum; Goel, Ruby; Kumar, Ashok; Qi, Yanfei; Lobaton, Gil; Hosaka, Koji; Mohammed, Mohammed; Handberg, Eileen M; Richards, Elaine M; Pepine, Carl J; Raizada, Mohan K

    2018-03-30

    Recent evidence indicates a link between gut pathology and microbiome with hypertension (HTN) in animal models. However, whether this association exists in humans is unknown. Thus, our objectives in the present study were to test the hypotheses that high blood pressure (BP) patients have distinct gut microbiomes and that gut-epithelial barrier function markers and microbiome composition could predict systolic BP (SBP). Fecal samples, analyzed by shotgun metagenomics, displayed taxonomic and functional changes, including altered butyrate production between patients with high BP and reference subjects. Significant increases in plasma of intestinal fatty acid binding protein (I-FABP), lipopolysaccharide (LPS), and augmented gut-targetting proinflammatory T helper 17 (Th17) cells in high BP patients demonstrated increased intestinal inflammation and permeability. Zonulin, a gut epithelial tight junction protein regulator, was markedly elevated, further supporting gut barrier dysfunction in high BP. Zonulin strongly correlated with SBP (R 2 = 0.5301, P <0.0001). Two models predicting SBP were built using stepwise linear regression analysis of microbiome data and circulating markers of gut health, and validated in a separate cohort by prediction of SBP from zonulin in plasma (R 2 = 0.4608, P <0.0001). The mouse model of HTN, chronic angiotensin II (Ang II) infusion, was used to confirm the effects of butyrate and gut barrier function on the cardiovascular system and BP. These results support our conclusion that intestinal barrier dysfunction and microbiome function are linked to HTN in humans. They suggest that manipulation of gut microbiome and its barrier functions could be the new therapeutic and diagnostic avenues for HTN. © 2018 The Author(s). Published by Portland Press Limited on behalf of the Biochemical Society.

  9. Mesoporous Amorphous Silicon: A Simple Synthesis of a High-Rate and Long-Life Anode Material for Lithium-Ion Batteries.

    Science.gov (United States)

    Lin, Liangdong; Xu, Xuena; Chu, Chenxiao; Majeed, Muhammad K; Yang, Jian

    2016-11-02

    Amorphous Si (a-Si) shows potential advantages over crystalline Si (c-Si) in lithium-ion batteries, owing to its high lithiation potential and good tolerance to intrinsic strain/stress. Herein, porous a-Si has been synthesized by a simple process, without the uses of dangerous or expensive reagents, sophisticated equipment, and strong acids that potential cause environment risks. These porous a-Si particles exhibit excellent electrochemical performances, owing to their porous structure, amorphous nature, and surface modification. They deliver a capacity of 1025 mAh g -1 at 3 A g -1 after 700 cycles. Moreover, the reversible capacity after electrochemical activation, is quite stable throughout the cycling, resulting in a capacity retention about around 88 %. The direct comparison between a-Si and c-Si anodes clearly supports the advantages of a-Si in lithium-ion batteries. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Parametric Study of Amorphous High-Entropy Alloys formation from two New Perspectives: Atomic Radius Modification and Crystalline Structure of Alloying Elements

    Science.gov (United States)

    Hu, Q.; Guo, S.; Wang, J. M.; Yan, Y. H.; Chen, S. S.; Lu, D. P.; Liu, K. M.; Zou, J. Z.; Zeng, X. R.

    2017-01-01

    Chemical and topological parameters have been widely used for predicting the phase selection in high-entropy alloys (HEAs). Nevertheless, previous studies could be faulted due to the small number of available data points, the negligence of kinetic effects, and the insensitivity to small compositional changes. Here in this work, 92 TiZrHfM, TiZrHfMM, TiZrHfMMM (M = Fe, Cr, V, Nb, Al, Ag, Cu, Ni) HEAs were prepared by melt spinning, to build a reliable and sufficiently large material database to inspect the robustness of previously established parameters. Modification of atomic radii by considering the change of local electronic environment in alloys, was critically found out to be superior in distinguishing the formation of amorphous and crystalline alloys, when compared to using atomic radii of pure elements in topological parameters. Moreover, crystal structures of alloying element were found to play an important role in the amorphous phase formation, which was then attributed to how alloying hexagonal-close-packed elements and face-centered-cubic or body-centered-cubic elements can affect the mixing enthalpy. Findings from this work not only provide parametric studies for HEAs with new and important perspectives, but also reveal possibly a hidden connection among some important concepts in various fields.

  11. Radiation tolerance of amorphous semiconductors

    International Nuclear Information System (INIS)

    Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

    1976-01-01

    In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

  12. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    International Nuclear Information System (INIS)

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  13. Silicon/Wolfram Carbide@Graphene composite: enhancing conductivity and structure stability in amorphous-silicon for high lithium storage performance

    International Nuclear Information System (INIS)

    Sun, Wei; Hu, Renzong; Liu, Hui; Zhang, Hanying; Liu, Jiangwen; Yang, Lichun; Wang, Haihui; Zhu, Min

    2016-01-01

    Highlights: • Two-step ball milling was used to produce an amorphous-Si/WC@Graphene(SW@G) composite. • Concrete-like core-shell structure with high stability was designed. • Multiscale WC particle strengthen the inside structure. • Graphene coating outside much enhanced the cycling stability and conductivity. • The SW@G anode exhibited long cycle life and superior volumetric capacity. - Abstract: Improving the electron conductivity and lithiated structure stability for Si anodes can result in high stable capacity in cells. A Silicon/Wolfram Carbide@Graphene (SW@G) composite anode is designed and produced by a simple two-step ball milling the mixture of coarse-grained Si with good conductive wolfram carbide (WC) and graphite. The SW@G composite consists of multiple-scale WC particles, which are uniformly distributed in amorphous Si matrices, and wrapped by graphene nanosheets (GNs) on the outside. Owing to the unique concrete-like core-shell structure, the wrapping of GNs on the Si improves the conductivity and structural stability of the composite. The inner WC particles which tightly connect the Si and graphene act as the cornerstone to resist large volumetric expansion of Si during charge/discharge, and in particular serve as the high-speed channels of electrons as well as provide more interface paths for Li + to accelerate their transfer inside the Si. These contribute to the excellent electrochemical properties of SW@G composite anode, including high volumetric capacity (three times higher than that of graphite), superior rate capability, and long-life stable cycleability. The synthetic method developed in this work paves the way for large-scale manufacturing of high performance Li storage anodes using commercially available materials and technologies.

  14. Corrosion behavior in high-temperature pressurized water of Zircaloy-4 joints brazed with Zr-Cu-based amorphous filler alloys

    Science.gov (United States)

    Lee, Jung Gu; Lee, Gyoung-Ja; Park, Jin-Ju; Lee, Min-Ku

    2017-05-01

    The compositional effects of ternary Zr-Cu-X (X: Al, Fe) amorphous filler alloys on galvanic corrosion susceptibility in high-temperature pressurized water were investigated for Zircaloy-4 brazed joints. Through an Al-induced microgalvanic reaction that deteriorated the overall nobility of the joint, application of the Zr-Cu-Al filler alloy caused galvanic coupling to develop readily between the Al-bearing joint and the Al-free base metal, finally leading to massive localized corrosion of the joint. Contrastingly, joints prepared with a Zr-Cu-Fe filler alloy showed excellent corrosion resistance comparable to that of the Zircaloy-4 base metal, since the Cu and Fe elements forming fine intermetallic particles with Zr did not influence the electrochemical stability of the resultant joints. The present results demonstrate that Fe is a more suitable alloying element than Al for brazing filler alloys subjected to high-temperature corrosive environments.

  15. Peculiarities of Vibration Characteristics of Amorphous Ices

    Science.gov (United States)

    Gets, Kirill V.; Subbotin, Oleg S.; Belosludov, Vladimir R.

    2012-03-01

    Dynamic properties of low (LDA), high (HDA) and very high (VHDA) density amorphous ices were investigated within the approach based on Lattice Dynamics simulations. In this approach, we assume that the short-range molecular order mainly determines the dynamic and thermodynamic properties of amorphous ices. Simulation cell of 512 water molecules with periodical boundary conditions and disordering allows us to study dynamical properties and dispersion curves in the Brillouin zone of pseudo-crystal. Existence of collective phenomena in amorphous ices which is usual for crystals but anomalous for disordered phase was confirmed in our simulations. Molecule amplitudes of delocalized (collective) as well as localized vibrations have been considered.

  16. Crystalline to amorphous transformation in silicon

    International Nuclear Information System (INIS)

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

  17. Co-sputtered amorphous Nb–Ta, Nb–Zr and Ta–Zr coatings for corrosion protection of cyclotron targets for [{sup 18}F] production

    Energy Technology Data Exchange (ETDEWEB)

    Skliarova, Hanna, E-mail: Hanna.Skliarova@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Ferrara, Ferrara (Italy); Azzolini, Oscar, E-mail: Oscar.Azzolini@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); Johnson, Richard R., E-mail: richard.johnson@teambest.com [BEST Cyclotron Systems Inc., 8765 Ash Street Unit 7, Vancouver, BC V6P 6T3 (Canada); Palmieri, Vincenzo, E-mail: Vincenzo.Palmieri@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Padua, Padua (Italy)

    2015-08-05

    Highlights: • Nb–Ta, Nb–Zr and Ta–Zr alloy films were deposited by co-sputtering. • Co-sputtered Nb–Zr and Nb–Ta alloy coatings had crystalline microstructures. • Diffusion barrier efficiency of Nb–Zr and Nb–Ta decreased with the increase of Nb %. • Co-sputtered Ta–Zr films with 30–73 at.% Ta were amorphous. • Sputtered amorphous Ta–Zr films showed superior diffusion barrier efficiency. - Abstract: Protective corrosion resistant coatings serve for decreasing the amount of ionic contaminants from Havar® entrance foils of the targets for [{sup 18}F] production. The corrosion damage of coated entrance foils is caused mainly by the diffusion of highly reactive products of water radiolysis through the protective film toward Havar® substrate. Since amorphous metal alloys (metallic glasses) are well-known to perform a high corrosion resistance, the glass forming ability, microstructure and diffusion barrier efficiency of binary alloys containing chemically inert Nb, Ta, Zr were investigated. Nb–Ta, Nb–Zr and Ta–Zr films of different alloy composition and ∼1.5 μm thickness were co-deposited by magnetron sputtering. Diffusion barrier efficiency tests used reactive aluminum underlayer and protons of acid solution and gallium atoms at elevated temperature as diffusing particles. Though co-sputtered Nb–Ta and Nb–Zr alloy films of different contents were crystalline, Ta–Zr alloy was found to form dense amorphous microstructures in a range of composition with 30–73% atomic Ta. The diffusion barrier efficiency of Nb–Zr and Nb–Ta alloy coatings decreased with increase of Nb content. The diffusion barrier efficiency of sputtered Ta–Zr alloy coatings increased with the transition from nanocrystalline columnar microstructure to amorphous for coatings with 30–73 at.% Ta.

  18. Provider perceptions of barriers and facilitators of HPV vaccination in a high-risk community.

    Science.gov (United States)

    Javanbakht, Marjan; Stahlman, Shauna; Walker, Susan; Gottlieb, Sami; Markowitz, Lauri; Liddon, Nicole; Plant, Aaron; Guerry, Sarah

    2012-06-22

    Maximizing HPV vaccine uptake among those at highest risk for cervical cancer is critical. We explored healthcare provider perspectives on factors influencing HPV vaccination among adolescent girls in a community with high cervical cancer rates. From March to May 2009, we conducted in-depth interviews with 21 medical staff providing care to adolescent girls at two clinics in Los Angeles, CA, serving a predominantly Hispanic population with high cervical cancer rates. Interviews were recorded and transcribed data were reviewed for coding and thematic content related to potential barriers and facilitators of HPV vaccination. Providers and medical staff overwhelmingly focused on parental beliefs as barriers to HPV vaccination. Perceived parental misconceptions acting as barriers included the belief that adolescents do not need vaccinations and that no-cost vaccine programs like Vaccines for Children are only available for younger children. Perceived parental concerns that the vaccine will promote sexual activity were prevalent, which prompted providers to frame HPV vaccine as a "routine" vaccine. However, the medical staff felt mothers with a friend or relative supportive of HPV vaccination were more likely to request the vaccine. The staff also noted that for Hispanic parents the "preferred" source of information is peers; if the "right people" in the community were supportive of HPV vaccine, parents were more willing to vaccinate. Other barriers included lack of immunization records among immigrant parents and a difficult-to-reach, mobile clientele. Providers noted a number of barriers to HPV vaccination, including some perceived parental misconceptions that could be addressed with education about the need for adolescent vaccines and available free vaccine programs. Because community support appears particularly important to Hispanic parents, the use of promotoras - peer liaisons between health organizations and the community - may increase HPV vaccine uptake in

  19. Amorphous iron (II) carbonate

    DEFF Research Database (Denmark)

    Sel, Ozlem; Radha, A.V.; Dideriksen, Knud

    2012-01-01

    Abstract The synthesis, characterization and crystallization energetics of amorphous iron (II) carbonate (AFC) are reported. AFC may form as a precursor for siderite (FeCO3). The enthalpy of crystallization (DHcrys) of AFC is similar to that of amorphous magnesium carbonate (AMC) and more...

  20. Model for amorphous aggregation processes

    Science.gov (United States)

    Stranks, Samuel D.; Ecroyd, Heath; van Sluyter, Steven; Waters, Elizabeth J.; Carver, John A.; von Smekal, Lorenz

    2009-11-01

    The amorphous aggregation of proteins is associated with many phenomena, ranging from the formation of protein wine haze to the development of cataract in the eye lens and the precipitation of recombinant proteins during their expression and purification. While much literature exists describing models for linear protein aggregation, such as amyloid fibril formation, there are few reports of models which address amorphous aggregation. Here, we propose a model to describe the amorphous aggregation of proteins which is also more widely applicable to other situations where a similar process occurs, such as in the formation of colloids and nanoclusters. As first applications of the model, we have tested it against experimental turbidimetry data of three proteins relevant to the wine industry and biochemistry, namely, thaumatin, a thaumatinlike protein, and α -lactalbumin. The model is very robust and describes amorphous experimental data to a high degree of accuracy. Details about the aggregation process, such as shape parameters of the aggregates and rate constants, can also be extracted.

  1. Measurement of leakage and design for the protective barrier of the high energy radiation therapy room

    International Nuclear Information System (INIS)

    Chu, S.S.; Park, C.Y.

    1981-01-01

    The logical development of an optimum structural shielding design and the computation of protective barriers for high energy radiation therapy room, Toshiba 13 MeV are presented. We obtained following results by comparison in between the precalculating values and actual survey after complete installation of radiogenerating units. 1) The calculating formula for the protective barrier written in NCRP report no. 34(1970) was the most ideal and economic calculating methods for the construction of barrier and to determine thickness for the meeting requirements of the number of patients of 80-100 in daily treatment. 2) The precalculating values of protective barrier are 5 times more protective than that of actual measurement. It is depending on radiation workload and utilization the data most securely. 3) The dose rate during exposure are 2-10 mR/hr at out of the door and the control room. 4) The foul smelling and ozone gas production from long exposure of cancer patients cannot be estimated when the room is ill ventilated. (author)

  2. Deep disposal of high activity radioactive wastes: the study of engineered and geological barriers behaviour

    International Nuclear Information System (INIS)

    Yu Jun; Cui; Delage, P.; Laure, E. de; Behrouz, Gatmiri; Sulem, J.; Anh Minh, Tang

    2008-09-01

    One option for the isolation of high activity and long lived radioactive wastes is the disposal of the vitrified waste containers in galleries dug inside impermeable rocks of the deep underground (granite, argillite, salt). The multi-barrier isolation concept is based on the use of successive barriers to avoid the migration of radionuclides towards the biosphere (container envelope, engineered barrier made of compacted swelling clay, and host rock). In parallel to the works carried out in underground laboratories, experiments and simulation works are performed in order to understand the behaviour of storage facilities and barriers under the effects of constraints, water fluxes and temperature changes. In this context, the UR Navier geotechnical team (CERMES), a joint research unit of Ecole des Ponts ParisTech and LCPC, has been working for more than 15 years on this topic for various contractors. These works are based on original experimental devices allowing to identify the thermo-hydro-mechanical phenomena and thereafter to model them. This dossier presents a summary of these works. (J.S.)

  3. Role of structural barriers for carotenoid bioaccessibility upon high pressure homogenization.

    Science.gov (United States)

    Palmero, Paola; Panozzo, Agnese; Colle, Ines; Chigwedere, Claire; Hendrickx, Marc; Van Loey, Ann

    2016-05-15

    A specific approach to investigate the effect of high pressure homogenization on the carotenoid bioaccessibility in tomato-based products was developed. Six different tomato-based model systems were reconstituted in order to target the specific role of the natural structural barriers (chromoplast substructure/cell wall) and of the phases (soluble/insoluble) in determining the carotenoid bioaccessibility and viscosity changes upon high pressure homogenization. Results indicated that in the absence of natural structural barriers (carotenoid enriched oil), the soluble and insoluble phases determined the carotenoid bioaccessibility upon processing whereas, in their presence, these barriers governed the bioaccessibility. Furthermore, it was shown that the increment of the viscosity upon high pressure homogenization is determined by the presence of insoluble phase, however, this result was related to the initial ratio of the soluble:insoluble phases in the system. In addition, no relationship between the changes in viscosity and carotenoid bioaccessibility upon high pressure homogenization was found. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Inductively and capacitively coupled plasmas at interface: A comparative study towards highly efficient amorphous-crystalline Si solar cells

    Science.gov (United States)

    Guo, Yingnan; Ong, Thiam Min Brian; Levchenko, I.; Xu, Shuyan

    2018-01-01

    A comparative study on the application of two quite different plasma-based techniques to the preparation of amorphous/crystalline silicon (a-Si:H/c-Si) interfaces for solar cells is presented. The interfaces were fabricated and processed by hydrogen plasma treatment using the conventional plasma-enhanced chemical vacuum deposition (PECVD) and inductively coupled plasma chemical vapour deposition (ICP-CVD) methods The influence of processing temperature, radio-frequency power, treatment duration and other parameters on interface properties and degree of surface passivation were studied. It was found that passivation could be improved by post-deposition treatment using both ICP-CVD and PECVD, but PECVD treatment is more efficient for the improvement on passivation quality, whereas the minority carrier lifetime increased from 1.65 × 10-4 to 2.25 × 10-4 and 3.35 × 10-4 s after the hydrogen plasma treatment by ICP-CVD and PECVD, respectively. In addition to the improvement of carrier lifetimes at low temperatures, low RF powers and short processing times, both techniques are efficient in band gap adjustment at sophisticated interfaces.

  5. Overcoming barriers to high performance seismic design using lessons learned from the green building industry

    Science.gov (United States)

    Glezil, Dorothy

    NEHRP's Provisions today currently governing conventional seismic resistant design. These provisions, though they ensure the life-safety of building occupants, extensive damage and economic losses may still occur in the structures. This minimum performance can be enhanced using the Performance-Based Earthquake Engineering methodology and passive control systems like base isolation and energy dissipation systems. Even though these technologies and the PBEE methodology are effective reducing economic losses and fatalities during earthquakes, getting them implemented into seismic resistant design has been challenging. One of the many barriers to their implementation has been their upfront costs. The green building community has faced some of the same challenges that the high performance seismic design community currently faces. The goal of this thesis is to draw on the success of the green building industry to provide recommendations that may be used overcome the barriers that high performance seismic design (HPSD) is currently facing.

  6. Applications in the Nuclear Industry for Corrosion-Resistant Amorphous-Metal Thermal-Spray Coatings

    International Nuclear Information System (INIS)

    Farmer, J; Choi, J

    2007-01-01

    Amorphous metal and ceramic thermal spray coatings have been developed that can be used to enhance the corrosion resistance of containers for the transportation, aging and disposal of spent nuclear fuel and high-level radioactive wastes. Fe-based amorphous metal formulations with chromium, molybdenum and tungsten have shown the corrosion resistance believed to be necessary for such applications. Rare earth additions enable very low critical cooling rates to be achieved. The boron content of these materials, and their stability at high neutron doses, enable them to serve as high efficiency neutron absorbers for criticality control. Ceramic coatings may provide even greater corrosion resistance for container applications, though the boron-containing amorphous metals are still favored for criticality control applications. These amorphous metal and ceramic materials have been produced as gas atomized powders and applied as near full density, non-porous coatings with the high-velocity oxy-fuel process. This paper summarizes the performance of these coatings as corrosion-resistant barriers, and as neutron absorbers. Relevant corrosion models are also discussed, as well as a cost model to quantify the economic benefits possible with these new materials

  7. Optimization of High Porosity Thermal Barrier Coatings Generated with a Porosity Former

    Czech Academy of Sciences Publication Activity Database

    Medřický, J.; Curry, N.; Pala, Zdeněk; Vilémová, Monika; Chráska, Tomáš; Johansson, J.; Markocsan, N.

    2015-01-01

    Roč. 24, č. 4 (2015), s. 622-628 ISSN 1059-9630 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61389021 Keywords : gas turbine s * high temperature application * porosity of coatings * stabilized zirconia * thermal barrier coatings (TBCs) Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 1.568, year: 2015

  8. Investigation of Ozone Yield of Air Fed Ozonizer by High Pressure Homogeneous Dielectric Barrier Discharge

    Science.gov (United States)

    2013-07-01

    around 2 ms and 12 ms in this figure, and during the discharge period, the current was continuous without any pulse . Once a discharge generated in...electron avalanches [10]. Fig. 1. High pressure ozone generator. (a) Top view (b) Side view Fig. 2. Barrier discharge device. Table 1... discharge N. Osawa P1 P, UY. Yoshioka UP2 P, R. Hanaoka P1 P 1 Center for Electric, Optic and Energy applications, Department of Electric and

  9. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

    Science.gov (United States)

    Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

    2013-01-30

    Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

  10. Barriers to Pelvic Floor Physical Therapy Regarding Treatment of High-Tone Pelvic Floor Dysfunction.

    Science.gov (United States)

    Zoorob, Dani; Higgins, Margaret; Swan, Kimberly; Cummings, Jennifer; Dominguez, Sarah; Carey, Erin

    Chronic pelvic pain is a prevalent and debilitating condition with a wide range of etiologies. An estimated 30% to 70% of chronic pelvic cases involve musculoskeletal component pain including high-tone pelvic floor dysfunction (HTPFD). Pelvic floor physical therapy has been shown to be a beneficial treatment for HTPFD, yet many patients do not have access to this treatment. The objective of this study was to identify the barriers preventing patients from following through with the first-line management, physical therapy. Participants with a diagnosis of HTPFD (n = 154) were identified from the list of referrals sent from the obstetrics and gynecology department to an affiliated PFPT center. Participants were contacted and asked to complete a phone survey addressing demographics and perceived barriers to care. Responses were collected in REDCap. Univariate and bivariate analyses were performed using a statistical analysis software. Seventy surveys were completed. The top barriers identified by participants were financial constraints (51.4%), perceived lack of utility (37.1%), time constraints (30.0%), and travel issues (18.6%); 84.4% of participants had 1 or more comorbid pain condition. Whereas 51.4% expressed some level of anxiety regarding the PFPT option, only 9.6% of participants did not start treatment because of fear of treatment. The majority of treatment barriers identified were concrete restraints, with insurance noncoverage and time constraints being the top issues. A fair number of participants expressed anxiety about the treatment or felt they received unclear explanations of the treatment. These are areas in which providers can potentially alleviate some barriers to care.

  11. Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface

    Science.gov (United States)

    Guo, Jiajun; Ren, Shuxia; Wu, Liqian; Kang, Xin; Chen, Wei; Zhao, Xu

    2018-03-01

    Saving energy and reducing operation parameter fluctuations remain crucial for enabling resistive random access memory (RRAM) to emerge as a universal memory. In this work, we report a resistive memory device based on an amorphous MgO (a-MgO) film that not only exhibits ultralow programming voltage (just 0.22 V) and low power consumption (less than 176.7 μW) but also shows excellent operative uniformity (the coefficient of variation is only 1.7% and 2.2% for SET and RESET voltage, respectively). Moreover, it also shows a forming-free characteristic. Further analysis indicates that these distinctive properties can be attributed to the unstable local structures and the rough surface of the Mg-deficient a-MgO film. These findings show the potential of using a-MgO in high-performance nonvolatile memory applications.

  12. Powerful highly efficient KrF lamps excited by surface and barrier discharges

    International Nuclear Information System (INIS)

    Borisov, V M; Vodchits, V A; El'tsov, A V; Khristoforov, O B

    1998-01-01

    An investigation was made of the characteristics of KrF lamps with different types of excitation by surface and barrier discharges in which the dielectric material was sapphire. The conditions were determined for the attainment of an extremely high yield of the KrF* fluorescence with the internal efficiency η in ∼30 % and 22% for pulsed surface and barrier discharges, respectively. A homogeneous surface discharge was maintained without gas circulation when the pulse repetition rate was 5 x 10 4 Hz. Quasicontinuous excitation of a surface discharge at near-atmospheric pressure made it possible to reach a KrF* fluorescence power density of about 80 W cm -3 , which was close to the limit set by the kinetics of the gaseous medium. Under prolonged excitation conditions the intensity of the UV output radiation was limited by the permissible heating of the gas to a temperature above which the operating life of the gaseous mixture containing fluorine fell steeply. This was the reason for the advantage of surface over barrier discharges: the former were characterised by a high thermal conductivity of a thin (∼0.2 mm) plasma layer on the surface of the cooled dielectric, which made it possible to construct powerful highly efficient KrF and ArF lamps emitting UV radiation of up to 1 W cm -2 intensity. (laser system components)

  13. Coastal barrier stratigraphy for Holocene high-resolution sea-level reconstruction.

    Science.gov (United States)

    Costas, Susana; Ferreira, Óscar; Plomaritis, Theocharis A; Leorri, Eduardo

    2016-12-08

    The uncertainties surrounding present and future sea-level rise have revived the debate around sea-level changes through the deglaciation and mid- to late Holocene, from which arises a need for high-quality reconstructions of regional sea level. Here, we explore the stratigraphy of a sandy barrier to identify the best sea-level indicators and provide a new sea-level reconstruction for the central Portuguese coast over the past 6.5 ka. The selected indicators represent morphological features extracted from coastal barrier stratigraphy, beach berm and dune-beach contact. These features were mapped from high-resolution ground penetrating radar images of the subsurface and transformed into sea-level indicators through comparison with modern analogs and a chronology based on optically stimulated luminescence ages. Our reconstructions document a continuous but slow sea-level rise after 6.5 ka with an accumulated change in elevation of about 2 m. In the context of SW Europe, our results show good agreement with previous studies, including the Tagus isostatic model, with minor discrepancies that demand further improvement of regional models. This work reinforces the potential of barrier indicators to accurately reconstruct high-resolution mid- to late Holocene sea-level changes through simple approaches.

  14. Research Progress on Fe-based Amorphous Coatings

    Directory of Open Access Journals (Sweden)

    LIANG Xiu-bing

    2017-09-01

    Full Text Available The latest research progresses on Fe-based amorphous coatings were reviewed. The typical alloy system and the classification of Fe-based amorphous coatings were clarified. The status, progress and development of the Fe-based amorphous coatings prepared by thermal spray processing and laser cladding process were discussed. The main mechanical properties and potential applications of the Fe-based amorphous coatings were also described. Furthermore, based on the main problems mentioned above, the future development of the Fe-based amorphous coatings was discussed, including the exploitation preparation technologies of high amorphous content of the Fe-based coatings, the development of the low cost and high performance Fe-based coating alloys system, the broadening application of Fe-based amorphous coatings, and so on.

  15. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO{sub 2} using the induced and secondary current measurements

    Energy Technology Data Exchange (ETDEWEB)

    Said, K., E-mail: kamel.said@fss.rnu.tn [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia); Moya, G.; Si Ahmed, A. [Im2np, UMR 7334 CNRS, Aix-Marseille Université, 13397 Marseille Cedex 20 (France); Damamme, G. [CEA, DAM, GRAMAT, 46500 Gramat (France); Kallel, A. [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia)

    2016-01-15

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO{sub 2} achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO{sub 2} is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10{sup 10} s{sup −1}) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  16. Structure of a new dense amorphous ice

    International Nuclear Information System (INIS)

    Finney, J.L.; Bowron, D.T.; Soper, A.K.; Loerting, T.; Mayer, E.; Hallbrucker, A.

    2002-01-01

    The detailed structure of a new dense amorphous ice, VHDA, is determined by isotope substitution neutron diffraction. Its structure is characterized by a doubled occupancy of the stabilizing interstitial location that was found in high density amorphous ice, HDA. As would be expected for a thermally activated unlocking of the stabilizing 'interstitial', the transition from VHDA to LDA (low-density amorphous ice) is very sharp. Although its higher density makes VHDA a better candidate than HDA for a physical manifestation of the second putative liquid phase of water, as for the HDA case, the VHDA to LDA transition also appears to be kinetically controlled

  17. Applications in the Nuclear Industry for Thermal Spray Amorphous Metal and Ceramic Coatings

    Science.gov (United States)

    Blink, J.; Farmer, J.; Choi, J.; Saw, C.

    2009-06-01

    Amorphous metal and ceramic thermal spray coatings have been developed with excellent corrosion resistance and neutron absorption. These coatings, with further development, could be cost-effective options to enhance the corrosion resistance of drip shields and waste packages, and limit nuclear criticality in canisters for the transportation, aging, and disposal of spent nuclear fuel. Iron-based amorphous metal formulations with chromium, molybdenum, and tungsten have shown the corrosion resistance believed to be necessary for such applications. Rare earth additions enable very low critical cooling rates to be achieved. The boron content of these materials and their stability at high neutron doses enable them to serve as high efficiency neutron absorbers for criticality control. Ceramic coatings may provide even greater corrosion resistance for waste package and drip shield applications, although the boron-containing amorphous metals are still favored for criticality control applications. These amorphous metal and ceramic materials have been produced as gas-atomized powders and applied as near full density, nonporous coatings with the high-velocity oxy-fuel process. This article summarizes the performance of these coatings as corrosion-resistant barriers and as neutron absorbers. This article also presents a simple cost model to quantify the economic benefits possible with these new materials.

  18. Nonmetallic engineered barriers, their properties and role in a geologic repository for high level radioactive waste

    International Nuclear Information System (INIS)

    Lisy, F.

    1994-01-01

    The efficiency of engineered barrier systems depends to a great extent on the properties of the materials used. Backfill and sealing materials must fulfill certain requirements and criteria. They must feature low hydraulic conductivity, high retardation capacity, extremely good sorption properties for a wide range of radionuclides potentially leachable from the deposited waste, low permeability, good compatibility with engineered and natural barriers, good workability, and availability in the necessary quantity and at a reasonable price. Some basic properties are presented of materials which fulfill, to a considerable degree, these requirements and which are thus suggested as suitable backfills, sealings of buffers, namely clay- and cement-based materials (concretes, mortars, etc.). A brief information is also given on some other materials like bitumen, asphalt, etc. (Z.S.) 4 refs

  19. Amorphous Ti-Zr

    International Nuclear Information System (INIS)

    Rabinkin, A.; Liebermann, H.; Pounds, S.; Taylor, T.

    1991-01-01

    This paper is the first report on processing, properties and potential application of amorphous titanium/zirconium-base alloys produced in the form of a good quality continuous and ductile ribbon having up to 12.5 mm width. To date, the majority of titanium brazing is accomplished using cooper and aluminum-base brazing filler metals. The brazements produced with these filler metals have rather low (∼300 degrees C) service temperature, thus impeding progress in aircraft and other technologies and industries. The attempt to develop a generation of high temperature brazing filler metals was made in the late sixties-early seventies studies in detail were a large number of Ti-, Zr-Ti-Zr, Ti-V and Zr-V-Ti based alloys. The majority of these alloys has copper and nickel as melting temperature depressants. The presence of nickel and copper converts them into eutectic alloys having [Ti(Zr)] [Cu(Ni)], intermetallic phases as major structural constituents. This, in turn, results in high alloy brittleness and poor, if any, processability by means of conventional, i.e. melting-ingot casting-deformation technology. In spite of good wettability and high joint strength achieved in dozens of promising alloys, only Ti-15Cu-15Ni is now widely used as a brazing filler metal for high service temperature. Up until now this material could not be produced as a homogeneous foil and is instead applied as a clad strip consisting of three separate metallic layers

  20. Amorphization within the tablet

    DEFF Research Database (Denmark)

    Doreth, Maria; Hussein, Murtadha Abdul; Priemel, Petra A.

    2017-01-01

    , the feasibility of microwave irradiation to prepare amorphous solid dispersions (glass solutions) in situ was investigated. Indomethacin (IND) and polyvinylpyrrolidone K12 (PVP) were tableted at a 1:2 (w/w) ratio. In order to study the influence of moisture content and energy input on the degree of amorphization......, tablet formulations were stored at different relative humidity (32, 43 and 54% RH) and subsequently microwaved using nine different power-time combinations up to a maximum energy input of 90 kJ. XRPD results showed that up to 80% (w/w) of IND could be amorphized within the tablet. mDSC measurements...

  1. Physics of amorphous metals

    CERN Document Server

    Kovalenko, Nikolai P; Krey, Uwe

    2008-01-01

    The discovery of bulk metallic glasses has led to a large increase in the industrial importance of amorphous metals, and this is expected to continue. This book is the first to describe the theoretical physics of amorphous metals, including the important theoretical development of the last 20 years.The renowned authors stress the universal aspects in their description of the phonon or magnon low-energy excitations in the amorphous metals, e.g. concerning the remarkable consequences of the properties of these excitations for the thermodynamics at low and intermediate temperatures. Tunneling

  2. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  3. Performance of high level waste forms and engineered barriers under repository conditions

    International Nuclear Information System (INIS)

    1991-02-01

    The IAEA initiated in 1977 a co-ordinated research programme on the ''Evaluation of Solidified High-Level Waste Forms'' which was terminated in 1983. As there was a continuing need for international collaboration in research on solidified high-level waste form and spent fuel, the IAEA initiated a new programme in 1984. The new programme, besides including spent fuel and SYNROC, also placed greater emphasis on the effect of the engineered barriers of future repositories on the properties of the waste form. These engineered barriers included containers, overpacks, buffer and backfill materials etc. as components of the ''near-field'' of the repository. The Co-ordinated Research Programme on the Performance of High-Level Waste Forms and Engineered Barriers Under Repository Conditions had the objectives of promoting the exchange of information on the experience gained by different Member States in experimental performance data and technical model evaluation of solidified high level waste forms, components of the waste package and the complete waste management system under conditions relevant to final repository disposal. The programme includes studies on both irradiated spent fuel and glass and ceramic forms as the final solidified waste forms. The following topics were discussed: Leaching of vitrified high-level wastes, modelling of glass behaviour in clay, salt and granite repositories, environmental impacts of radionuclide release, synroc use for high--level waste solidification, leachate-rock interactions, spent fuel disposal in deep geologic repositories and radionuclide release mechanisms from various fuel types, radiolysis and selective leaching correlated with matrix alteration. Refs, figs and tabs

  4. Electrical and optical characteristics of dielectric-barrier discharge driven by high voltage nanosecond generator

    International Nuclear Information System (INIS)

    Ahmadeev, V.V.; Kost'yuchenko, S.V.; Kudryavtsev, N.N.; Kurkin, G.A.; Vasilyak, L.M.

    1998-01-01

    Electrical and optical characteristics of the dielectric-barrier discharge in the pressure range of 10-400 Torr were investigated experimentally, particular attention being paid to the discharge homogeneity and to the energy dissipation in the discharge volume. The discharge was driven by a high-voltage pulse generator producing nanosecond high-voltage pulses with an amplitude of 20-30 kV. Air, nitrogen, and helium were used as working gases. The discharge was found to be homogeneous within a wide range of gas pressure. A power density of up to 250 mW/cm 3 has been achieved. (J.U.)

  5. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

    Science.gov (United States)

    Lee, Sungsik; Nathan, Arokia

    2016-10-01

    The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

  6. Reducing Barriers To The Use of High-Efficiency Lighting Systems

    Energy Technology Data Exchange (ETDEWEB)

    Peter Morante

    2005-12-31

    With funding from the U.S. Department of Energy (DOE), the Lighting Research Center (LRC) at Rensselaer Polytechnic Institute completed the four-year research project, Reducing Barriers to the Use of High-Efficiency Lighting Systems. The initial objectives were: (1) identifying barriers to widespread penetration of lighting controls in commercial/industrial (C/I) applications that employ fluorescent lamp technologies, and (2) making recommendations to overcome these barriers. The addition of a fourth year expanded the original project objectives to include an examination of the impact on fluorescent lamps from dimming utilizing different lamp electrode heating and dimming ratios. The scope of the project was narrowed to identify barriers to the penetration of lighting controls into commercial-industrial (C/I) applications that employ fluorescent lamp technologies, and to recommend means for overcoming these barriers. Working with lighting manufacturers, specifiers, and installers, the project identified technological and marketing barriers to the widespread use of lighting controls, specifically automatic-off controls, occupancy sensors, photosensors, dimming systems, communication protocols and load-shedding ballasts. The primary barriers identified include cost effectiveness of lighting controls to the building owner, lack of standard communication protocols to allow different part of the control system to communicate effectively, and installation and commissioning issues. Overcoming the identified barriers requires lighting control products on the market to achieve three main goals: (1) Achieve sufficient functionality to meet the key requirements of their main market. (2) Allow significant cost reduction compared to current market standard systems. Cost should consider: hardware capital cost including wiring, design time required by the specifier and the control system manufacturer, installation time required by the electrician, and commissioning time and

  7. Emerging trends in the stabilization of amorphous drugs.

    Science.gov (United States)

    Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J; Grohganz, Holger; Rades, Thomas

    2013-08-30

    The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative methods to amorphous polymer dispersions for stabilizing the amorphous form of drugs. First, an overview of the properties and stabilization mechanisms of amorphous forms is provided. Subsequently, formulation approaches such as the preparation of co-amorphous small-molecule mixtures and the use of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals. Copyright © 2012 Elsevier B.V. All rights reserved.

  8. Amorphization Mechanism of Icosahedral Platinum Clusters

    International Nuclear Information System (INIS)

    Apra, Edoardo; Baletto, Francesca; Ferrando, Riccardo; Fortunelli, Alessandro

    2004-01-01

    The amorphization mechanism of high-symmetry pt nanoclusters is investigated by a combination of Molecular Dynamics simulations and Density Functional calculations. A general mechanism for amorphization, involving rosette-like structural transformations at fivefold vertices, is proposed. IN the tosette, a fivefold vertex is transformed into a hexagonal ring. We show that for icosahedral Pt nanoclusters, this transformation is associated with an energy gain, so that their most favorable structures have a low symmetry even at icosahedral magic numbers

  9. Positrons in amorphous alloys

    International Nuclear Information System (INIS)

    Moser, Pierre.

    1981-07-01

    Positron annihilation techniques give interesting informations about ''empty spaces'' in amorphous alloys. The results of an extensive research work on the properties of either pre-existing or irradiation induced ''empty spaces'' in four amorphous alloys are presented. The pre-existing empty spaces appear to be small vacancy-like defects. The irradiation induced defects are ''close pairs'' with widely distributed configurations. There is a strong interaction between vacancy like and interstitial like components. A model is proposed, which explains the radiation resistance mechanism of the amorphous alloys. An extensive joint research work to study four amorphous alloys, Fe 80 B 20 ,Fe 40 Ni 40 P 14 B 6 , Cu 50 Ti 50 , Pd 80 Si 20 , is summarized

  10. Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates

    NARCIS (Netherlands)

    Nguyen, Minh D.; Houwman, Evert P.; Rijnders, Guus

    2017-01-01

    Thin films of PbZr0.52Ti0.48O3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca2Nb3O10 nanosheets as growth template and using LaNiO3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain

  11. Minimized thermal conductivity in highly stable thermal barrier W/ZrO{sub 2} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Doering, Florian; Major, Anna; Eberl, Christian; Krebs, Hans-Ulrich [University of Goettingen, Institut fuer Materialphysik, Goettingen (Germany)

    2016-10-15

    Nanoscale thin-film multilayer materials are of great research interest since their large number of interfaces can strongly hinder phonon propagation and lead to a minimized thermal conductivity. When such materials provide a sufficiently small thermal conductivity and feature in addition also a high thermal stability, they would be possible candidates for high-temperature applications such as thermal barrier coatings. For this article, we have used pulsed laser deposition in order to fabricate thin multilayers out of the thermal barrier material ZrO{sub 2} in combination with W, which has both a high melting point and high density. Layer thicknesses were designed such that bulk thermal conductivity is governed by the low value of ZrO{sub 2}, while ultrathin W blocking layers provide a high number of interfaces. By this phonon scattering, reflection and shortening of mean free path lead to a significant reduction in overall thermal conductivity even below the already low value of ZrO{sub 2}. In addition to this, X-ray reflectivity measurements were taken showing strong Bragg peaks even after annealing such multilayers at 1300 K. Those results identify W/ZrO{sub 2} multilayers as desired thermally stable, low-conductivity materials. (orig.)

  12. Superplasticity of amorphous alloy

    International Nuclear Information System (INIS)

    Levin, Yu.B.; Likhachev, V.L.; Sen'kov, O.N.

    1988-01-01

    Results of mechanical tests of Co 57 Ni 10 Fe 5 Si 11 B 17 amorphous alloy are presented and the effect of crystallization, occurring during deformation process, on plastic low characteristics is investiagted. Superplasticity of amorphous tape is investigated. It is shown, that this effect occurs only when during deformation the crystallization takes place. Process model, based on the usage disclination concepts about glass nature, is suggested

  13. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  14. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  15. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  16. Corrosion behavior in high-temperature pressurized water of Zircaloy-4 joints brazed with Zr-Cu-based amorphous filler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jung Gu, E-mail: jglee88@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 44610 (Korea, Republic of); Lee, Gyoung-Ja; Park, Jin-Ju [Nuclear Materials Development Division, Korea Atomic Energy Research Institute (KAERI), Yuseong, Daejeon 34057 (Korea, Republic of); Lee, Min-Ku, E-mail: leeminku@kaeri.re.kr [Nuclear Materials Development Division, Korea Atomic Energy Research Institute (KAERI), Yuseong, Daejeon 34057 (Korea, Republic of)

    2017-05-15

    The compositional effects of ternary Zr-Cu-X (X: Al, Fe) amorphous filler alloys on galvanic corrosion susceptibility in high-temperature pressurized water were investigated for Zircaloy-4 brazed joints. Through an Al-induced microgalvanic reaction that deteriorated the overall nobility of the joint, application of the Zr-Cu-Al filler alloy caused galvanic coupling to develop readily between the Al-bearing joint and the Al-free base metal, finally leading to massive localized corrosion of the joint. Contrastingly, joints prepared with a Zr-Cu-Fe filler alloy showed excellent corrosion resistance comparable to that of the Zircaloy-4 base metal, since the Cu and Fe elements forming fine intermetallic particles with Zr did not influence the electrochemical stability of the resultant joints. The present results demonstrate that Fe is a more suitable alloying element than Al for brazing filler alloys subjected to high-temperature corrosive environments. - Highlights: •Corrosion of Zircaloy-4 joints brazed with Zr-Cu-X filler alloys was investigated. •Alloyed Al deteriorated the overall nobility of joints by microgalvanic reaction. •Compositional gradient of Al in joints was the driving force for galvanic corrosion. •Cu and Fe did not influence the electrochemical stability of joints. •Zr-Cu-Fe filler alloy yielded excellent high-temperature corrosion resistance.

  17. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

    Science.gov (United States)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-14

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  18. From spent graphite to amorphous sp2+sp3 carbon-coated sp2 graphite for high-performance lithium ion batteries

    Science.gov (United States)

    Ma, Zhen; Zhuang, Yuchan; Deng, Yaoming; Song, Xiaona; Zuo, Xiaoxi; Xiao, Xin; Nan, Junmin

    2018-02-01

    Today, with the massive application of lithium ion batteries (LIBs) in the portable devices and electric vehicles, to supply the active materials with high-performances and then to recycle their wastes are two core issues for the development of LIBs. In this paper, the spent graphite (SG) in LIBs is used as raw materials to fabricate two comparative high-capacity graphite anode materials. Based on a microsurgery-like physical reconstruction, the reconstructed graphite (RG) with a sp2+sp3 carbon surface is prepared through a microwave exfoliation and subsequent spray drying process. In contrast, the neural-network-like amorphous sp2+sp3 carbon-coated graphite (AC@G) is synthesized using a self-reconfigurable chemical reaction strategy. Compared with SG and commercial graphite (CG), both RG and AC@G have enhanced specific capacities, from 311.2 mAh g-1 and 360.7 mAh g-1 to 409.7 mAh g-1 and 420.0 mAh g-1, at 0.1C after 100 cycles. In addition, they exhibit comparable cycling stability, rate capability, and voltage plateau with CG. Because the synthesis of RG and AC@G represents two typical physical and chemical methods for the recycling of SG, these results on the sp2+sp3 carbon layer coating bulk graphite also reveal an approach for the preparation of high-performance graphite anode materials derived from SG.

  19. Corrosion behavior in high-temperature pressurized water of Zircaloy-4 joints brazed with Zr-Cu-based amorphous filler alloys

    International Nuclear Information System (INIS)

    Lee, Jung Gu; Lee, Gyoung-Ja; Park, Jin-Ju; Lee, Min-Ku

    2017-01-01

    The compositional effects of ternary Zr-Cu-X (X: Al, Fe) amorphous filler alloys on galvanic corrosion susceptibility in high-temperature pressurized water were investigated for Zircaloy-4 brazed joints. Through an Al-induced microgalvanic reaction that deteriorated the overall nobility of the joint, application of the Zr-Cu-Al filler alloy caused galvanic coupling to develop readily between the Al-bearing joint and the Al-free base metal, finally leading to massive localized corrosion of the joint. Contrastingly, joints prepared with a Zr-Cu-Fe filler alloy showed excellent corrosion resistance comparable to that of the Zircaloy-4 base metal, since the Cu and Fe elements forming fine intermetallic particles with Zr did not influence the electrochemical stability of the resultant joints. The present results demonstrate that Fe is a more suitable alloying element than Al for brazing filler alloys subjected to high-temperature corrosive environments. - Highlights: •Corrosion of Zircaloy-4 joints brazed with Zr-Cu-X filler alloys was investigated. •Alloyed Al deteriorated the overall nobility of joints by microgalvanic reaction. •Compositional gradient of Al in joints was the driving force for galvanic corrosion. •Cu and Fe did not influence the electrochemical stability of joints. •Zr-Cu-Fe filler alloy yielded excellent high-temperature corrosion resistance.

  20. Enhancing Light-Trapping Properties of Amorphous Si Thin-Film Solar Cells Containing High-Reflective Silver Conductors Fabricated Using a Nonvacuum Process

    Directory of Open Access Journals (Sweden)

    Jun-Chin Liu

    2014-01-01

    Full Text Available We proposed a low-cost and highly reflective liquid organic sheet silver conductor using back contact reflectors in amorphous silicon (a-Si single junction superstrate configuration thin-film solar cells produced using a nonvacuum screen printing process. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (Jsc of sheet silver conductor cells was higher than 1.25 mA/cm2. Using external quantum efficiency measurements, the sheet silver conductor using back contact reflectors in cells was observed to effectively enhance the light-trapping ability in a long wavelength region (between 600 nm and 800 nm. Consequently, we achieved an optimal initial active area efficiency and module conversion efficiency of 9.02% and 6.55%, respectively, for the a-Si solar cells. The results indicated that the highly reflective sheet silver conductor back contact reflector layer prepared using a nonvacuum process is a suitable candidate for high-performance a-Si thin-film solar cells.

  1. Using containerless methods to develop amorphous pharmaceuticals.

    Science.gov (United States)

    Weber, J K R; Benmore, C J; Suthar, K J; Tamalonis, A J; Alderman, O L G; Sendelbach, S; Kondev, V; Yarger, J; Rey, C A; Byrn, S R

    2017-01-01

    Many pipeline drugs have low solubility in their crystalline state and require compounding in special dosage forms to increase bioavailability for oral administration. The use of amorphous formulations increases solubility and uptake of active pharmaceutical ingredients. These forms are rapidly gaining commercial importance for both pre-clinical and clinical use. Synthesis of amorphous drugs was performed using an acoustic levitation containerless processing method and spray drying. The structure of the products was investigated using in-situ high energy X-ray diffraction. Selected solvents for processing drugs were investigated using acoustic levitation. The stability of amorphous samples was measured using X-ray diffraction. Samples processed using both spray drying and containerless synthesis were compared. We review methods for making amorphous pharmaceuticals and present data on materials made by containerless processing and spray drying. It was shown that containerless processing using acoustic levitation can be used to make phase-pure forms of drugs that are known to be difficult to amorphize. The stability and structure of the materials was investigated in the context of developing and making clinically useful formulations. Amorphous compounds are emerging as an important component of drug development and for the oral delivery of drugs with low solubility. Containerless techniques can be used to efficiently synthesize small quantities of pure amorphous forms that are potentially useful in pre-clinical trials and for use in the optimization of clinical products. Developing new pharmaceutical products is an essential enterprise to improve patient outcomes. The development and application of amorphous pharmaceuticals to increase absorption is rapidly gaining importance and it provides opportunities for breakthrough research on new drugs. There is an urgent need to solve problems associated with making formulations that are both stable and that provide high

  2. Diffusion barrier coatings for high temperature corrosion resistance of advanced carbon/carbon composites

    International Nuclear Information System (INIS)

    Singh Raman, K.S.

    2000-01-01

    Carbon possesses an excellent combination of mechanical and thermal properties, viz., excellent creep resistance at temperatures up to 2400 deg C in non-oxidizing environment and a low thermal expansion coefficient. These properties make carbon a potential material for very high temperature applications. However, the use of carbon materials at high temperatures is considerably restricted due to their extremely poor oxidation resistance at temperatures above 400 deg C. The obvious choice for improving high temperature oxidation resistance of such materials is a suitable diffusion barrier coating. This paper presents an overview of recent developments in advanced diffusion- and thermal-barrier coatings for ceramic composites, with particular reference to C/C composites. The paper discusses the development of multiphase and multi-component ceramic coatings, and recent investigations on the oxidation resistance of the coated C/C composites. The paper also discusses the cases of innovative engineering solutions for traditional problems with the ceramic coatings, and the scope of intelligent processing in developing coatings for the C/C composites. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  3. Structural investigation of the amorphous/crystalline interface by means of quantitative high-resolution transmission electron microscopy on the systems a-Si/c-Si and a-Ge/c-Si; Strukturelle Untersuchung der amorph/kristallinen Grenzflaeche mittels quantitativer hochaufloesender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, K.

    2006-11-02

    In this Thesis the interfaces between covalently bonded crystalline and amorphous materials were studied with regard to the induced ordering in the amorphous material in the interfacial region by means of high-resolution transmission electron microscopy (HREM). The interface between amorphous germanium and crystalline silicon and the interface between amorphous and crystalline silicon served as material system. In order to quantify the influence of the crystalline order on the amorphous material, the HREM images were periodically averaged along the interface. The intensity components, which are correlated with the period of the lattice image, could thus be separated from the statistical intensity fluctuations, which are characteristic for images of amorphous materials. Since amorphous materials can only be described meaningful by statistical distribution functions, for the induced order a three-dimensional distribution function {rho}{sub 3D}(r) was taken as a basis, which describes the probability to find an atom in the amorphous material, if r=0 is the position of an atom in the crystal. Its two-dimensional projection, {rho}, can be determined using iterative image matching techniques on averaged experimental and simulated interface images. For the analyzed material systems {rho} exhibits lateral ordering as well as a pronounced layering in the vicinity of the interface. In the case of the a-Si/c-Si sample the mean orientation of bonds was 70.5 , as is in the case of the undistorted diamond lattice, while for the a-Ge/c-Si sample 65 resulted. The standard deviation for the distribution of the deviations from the mean bond angle yields for the a-Ge/c-Si sample in the first atomic layer a value of 11.3 and for the a-Si/c-Si sample 1.9 . These results suggest the conclusion, that the differences in these values are to be interpreted as the reaction of the amorphous material to the volume misfit. Although for both material systems 1.4 nm was calculated for the width

  4. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    Science.gov (United States)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  5. Stability of trans-fermium elements at high spin: Measuring the fission barrier of 254No

    International Nuclear Information System (INIS)

    Henning, Greg

    2012-01-01

    Super heavy nuclei provide opportunities to study nuclear structure near three simultaneous limits: in charge Z, spin I and excitation energy E*. These nuclei exist only because of a fission barrier, created by shell effects. It is therefore important to determine the fission barrier and its spin dependence B f (I), which gives information on the shell energy E(shell)(I). Theoretical calculations predict different fission barrier heights from B f (I = 0) = 6.8 MeV for a macro-microscopic model to 8.7 MeV for Density Functional Theory calculations using the Gogny or Skyrme interactions. Hence, a measurement of B f provides a test for theories.To investigate the fission barrier, an established method is to measure the rise of fission with excitation energy, characterized by the ratio of decay widths Γ(fission)/Γ(total), using transfer reactions. However, for heavy elements such as 254 No, there is no suitable target for a transfer reaction. We therefore rely on the complementary decay widths ratio Γ γ /Γ(fission) and its spin dependence, deduced from the entry distribution (I, E*).Measurements of the gamma-ray multiplicity and total energy for 254 No have been performed with beam energies of 219 and 223 MeV in the reaction 208 Pb( 48 Ca,2n) at ATLAS (Argonne Tandem Linac Accelerator System). The 254 No gamma rays were detected using the Gammasphere array as a calorimeter - as well as the usual high resolution γ-ray detector. Coincidences with evaporation residues at the Fragment Mass Analyzer focal plane separated 254 No gamma rays from those from fission fragments, which are ≥ 10 6 more intense. From this measurement, the entry distribution - i.e. the initial distribution of I and E* - is constructed. Each point (I,E*) of the entry distribution is a point where gamma decay wins over fission and, therefore, gives information on the fission barrier. The measured entry distributions show an increase in the maximum spin and excitation energy from 219 to 223 Me

  6. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

    Science.gov (United States)

    Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

    2014-04-09

    We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

  7. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  8. Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

    Science.gov (United States)

    Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

    2013-01-01

    P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

  9. Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO{sub 2} layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States)

    2016-03-07

    We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge{sub 1−x}Sn{sub x} thin films (0.074 < x < 0.085) crystallized on amorphous SiO{sub 2} towards 3D photonic integration. Due to a much smaller Poisson's ratio for (111) vs. (100) orientation, 0.44% thermally induced biaxial tensile strain reduces the direct-gap by 0.125 eV towards enhanced direct-gap semiconductor properties, twice as effective as the tensile strain in Ge(100) films. Correspondingly, the optical response is extended to λ = 2.8 μm. A dilatational deformation potential of a = −12.8 ± 0.8 eV is derived. These GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.

  10. Pressure tuning of anisotropy barrier in Fe8 SMMs probed using high frequency EPR

    Science.gov (United States)

    Thirunavukkuarasu, Komalavalli; Beedle, Christopher; Tozer, Stanley; Hill, Stephen

    2014-03-01

    Single-molecule magnets (SMMs) are spin systems with large spin ground state where quantum phenomena such as tunneling of magnetization via a considerable anisotropy barrier manifest. One such SMM that has been extensively studied is [Fe8O2(OH)12(tacn)6]Br8.9H2O, also known as Fe8, with a giant spin ground state of S=10. The eight Fe atoms bridged by the ligands form a butterfly structure where six Fe atoms have spins up and two spins down in the simplest model. This structure in fact gives rise to geometrical spin frustration effects within the cluster. By varying the interaction between the spins, manipulation of quantum tunneling in SMMs may be achieved. Typically, the manipulation of spin interactions is realized using chemical methods. As an alternative approach, we employ high pressure to induce changes in the ligand-field environment of the Fe atoms. In this presentation, the pressure-dependent changes in the anisotropy barrier in single crystal Fe8 SMMs investigated by high frequency electron paramagnetic resonance measurements will be discussed.

  11. Simultaneous realization of high density edge transport barrier and improved L-mode on CHS

    International Nuclear Information System (INIS)

    Minami, Takashi; Okamura, Shoichi; Suzuki, Chihiro

    2008-10-01

    An edge transport barrier (ETB) formation and an improved L-mode (IL mode) have been simultaneously realized in high density region (n-bar e - 1.2x10 20 m -3 ) on Compact Helical System (CHS). When the ETB is formed during the IL mode, the density reduction in the edge region is suppressed by the barrier formation. As a result of the continuous increasing of the temperature by the IL mode, the stored energy during the combined mode increased up to the maximum stored energy (W p - 9.4 kJ) recorded in CHS experiments. The plasma pressure in the peripheral region increases up to three times larger than that of the L-mode, and the large edge plasma pressure gradient is formed accompanying the pedestal structure. That is caused by the anomalous transport reduction that is confirmed from the sharp drop of the density fluctuation in the edge region. The neutral particle reduction in the peripheral region and the metallic impurity accumulation in the core plasma are simultaneously observed during the high density ETB formation. (author)

  12. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  13. Research on stable, high-efficiency, amorphous silicon multijunction modules. Annual subcontract report, 1 May 1991--30 April 1992

    Energy Technology Data Exchange (ETDEWEB)

    Catalano, A.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

    1992-08-01

    This report describes work to demonstrate a multijunction module with a ``stabilized`` efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

  14. High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Chen-Yang; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Greene, Raymond G. [Corning Incorporated, Corning, New York 14831 (United States)

    2015-03-23

    Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

  15. Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film.

    Science.gov (United States)

    Wu, Chiu-Hsien; Jiang, Guo-Jhen; Chang, Kai-Wei; Deng, Zu-Yin; Li, Yu-Ning; Chen, Kuen-Lin; Jeng, Chien-Chung

    2018-01-09

    In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60-70 ppb also showed a good response. The resistance change (Δ R ) and sensitivity ( S ) were linearly dependent on the ozone concentration. The response time ( T 90-res ), recovery time ( T 90-rec ), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance-time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications.

  16. Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

    Directory of Open Access Journals (Sweden)

    Chiu-Hsien Wu

    2018-01-01

    Full Text Available In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60–70 ppb also showed a good response. The resistance change (ΔR and sensitivity (S were linearly dependent on the ozone concentration. The response time (T90-res, recovery time (T90-rec, and time constant (τ showed first-order exponential decay with increasing ozone concentration. The resistance–time curve shows that the maximum resistance change rate (dRg/dt is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ, and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications.

  17. Feasibility of using a high-level waste canister as an engineered barrier in disposal

    International Nuclear Information System (INIS)

    Slate, S.C.; Pitman, S.G.; Nesbitt, J.F.; Partain, W.L.

    1982-08-01

    The objective of this report is to evaluate the feasibility of designing a process canister that could also serve as a barrier canister. To do this a general set of performance criteria is assumed and several metal alloys having a high probability of demonstrating high corrosion resistance under repository conditions are evaluated in a qualitative design assessment. This assessment encompasses canister manufacture, the glass-filling process, interim storage, transportation, and to a limited extent, disposal in a repository. A series of scoping tests were carried out on two titanium alloys and Inconel 625 to determine if the high temperature inherent in the glass-fill processing would seriously affect either the strength or corrosion resistance of these metals. This is a process-related concern unique to the barrier canister concept. The material properties were affected by the heat treatments which simulated both the joule-heated glass melter process (titanium alloys and Inconel 625) and the in-can melter (ICM) process (Inconel 625). However, changes in the material properties were generally within 20% of the original specimens. Accelerated corrosion testing of the heat treated coupons in a highly oxygenated brine showed basic corrosion resistance of titanium grade 12 and Inconel 625 to compare favorably with that of the untreated coupons. The titanium grade 2 coupons experienced severe corrosion pitting. These corrosion tests were of a scoping nature and suitable primarily for the detection of gross sensitivity to the heat treatment inherent in the glass-fill process. They are only suggstive of repository performance since the tests do not adequately model the wide range of repository conditions that could conceivably occur

  18. Effectiveness of cuticular transpiration barriers in a desert plant at controlling water loss at high temperatures.

    Science.gov (United States)

    Schuster, Ann-Christin; Burghardt, Markus; Alfarhan, Ahmed; Bueno, Amauri; Hedrich, Rainer; Leide, Jana; Thomas, Jacob; Riederer, Markus

    2016-01-01

    Maintaining the integrity of the cuticular transpiration barrier even at elevated temperatures is of vital importance especially for hot-desert plants. Currently, the temperature dependence of the leaf cuticular water permeability and its relationship with the chemistry of the cuticles are not known for a single desert plant. This study investigates whether (i) the cuticular permeability of a desert plant is lower than that of species from non-desert habitats, (ii) the temperature-dependent increase of permeability is less pronounced than in those species and (iii) whether the susceptibility of the cuticular permeability barrier to high temperatures is related to the amounts or properties of the cutin or the cuticular waxes. We test these questions with Rhazya stricta using the minimum leaf water vapour conductance (gmin) as a proxy for cuticular water permeability. gmin of R. stricta (5.41 × 10(-5) m s(-1) at 25 °C) is in the upper range of all existing data for woody species from various non-desert habitats. At the same time, in R. stricta, the effect of temperature (15-50 °C) on gmin (2.4-fold) is lower than in all other species (up to 12-fold). Rhazya stricta is also special since the temperature dependence of gmin does not become steeper above a certain transition temperature. For identifying the chemical and physical foundation of this phenomenon, the amounts and the compositions of cuticular waxes and cutin were determined. The leaf cuticular wax (251.4 μg cm(-2)) is mainly composed of pentacyclic triterpenoids (85.2% of total wax) while long-chain aliphatics contribute only 3.4%. In comparison with many other species, the triterpenoid-to-cutin ratio of R. stricta (0.63) is high. We propose that the triterpenoids deposited within the cutin matrix restrict the thermal expansion of the polymer and, thus, prevent thermal damage to the highly ordered aliphatic wax barrier even at high temperatures. Published by Oxford University Press on behalf of the

  19. Execution techniques for high level radioactive waste disposal. 4. Design and manufacturing procedure of engineered barriers

    International Nuclear Information System (INIS)

    Ogata, Nobuhide; Kosaki, Akio; Ueda, Hiroyoshi; Asano, Hidekazu; Takao, Hajime

    1999-01-01

    Ensuring the physical integrity of engineered barriers for an extremely long time period is necessary for geological disposal of high-level radioactive wastes. This report describes the design process and the designed configurations of both overpack and buffer as engineered barriers. Manufacturing procedure, quality control and inspection methods are also summarized. Carbon steel was selected as a structural material of the overpack and the specification of the overpack was determined assuming disposal in the depths of 1000 m below surface of crystalline rock site. The mixture of bentonite and sand (80% sodium bentonite and 20% silica sand by mass) was selected as material for a buffer from mainly its permeability and characteristics of self-sealing of a gap occurred in construction work. Welding method of a lid onto the main body of the overpack, uniting method of a corrosion-resistance layer and the structural component in the case of a composite overpack and manufacturing procedures of both blocks-type and monolithic-type buffers are also investigated. (author)

  20. Anticipated Degradation Modes of Metallic Engineered Barriers for High-Level Nuclear Waste Repositories

    Science.gov (United States)

    Rodríguez, Martín A.

    2014-03-01

    Metallic engineered barriers must provide a period of absolute containment to high-level radioactive waste in geological repositories. Candidate materials include copper alloys, carbon steels, stainless steels, nickel alloys, and titanium alloys. The national programs of nuclear waste management have to identify and assess the anticipated degradation modes of the selected materials in the corresponding repository environment, which evolves in time. Commonly assessed degradation modes include general corrosion, localized corrosion, stress-corrosion cracking, hydrogen-assisted cracking, and microbiologically influenced corrosion. Laboratory testing and modeling in metallurgical and environmental conditions of similar and higher aggressiveness than those expected in service conditions are used to evaluate the corrosion resistance of the materials. This review focuses on the anticipated degradation modes of the selected or reference materials as corrosion-resistant barriers in nuclear repositories. These degradation modes depend not only on the selected alloy but also on the near-field environment. The evolution of the near-field environment varies for saturated and unsaturated repositories considering backfilled and unbackfilled conditions. In saturated repositories, localized corrosion and stress-corrosion cracking may occur in the initial aerobic stage, while general corrosion and hydrogen-assisted cracking are the main degradation modes in the anaerobic stage. Unsaturated repositories would provide an oxidizing environment during the entire repository lifetime. Microbiologically influenced corrosion may be avoided or minimized by selecting an appropriate backfill material. Radiation effects are negligible provided that a thick-walled container or an inner shielding container is used.

  1. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  2. Dynamic simulation of collisions of heavy high-speed trucks with concrete barriers

    International Nuclear Information System (INIS)

    Itoh, Yoshito; Liu, Chunlu; Kusama, Ryuichi

    2007-01-01

    Real vehicle collision experiments on full-scale road safety barriers are important to determine the outcome of a vehicle versus barrier impact accident. However, such experiments require large investment of time and money. Numerical simulation has therefore been imperative as an alternative method for testing concrete barriers. In this research, spring subgrade models were first developed to simulate the ground boundary of concrete barriers. Both heavy trucks and concrete barriers were modeled using finite element methods (FEM) to simulate dynamic collision performances. Comparison of the results generated from computer simulations and on-site full-scale experiments demonstrated that the developed models could be applied to simulate the collision of heavy trucks with concrete barriers to provide the data to design new road safety barriers and analyze existing ones

  3. Improving reversible capacities of high-surface lithium insertion materials – the case of amorphous TiO2

    NARCIS (Netherlands)

    Ganapathy, S.; Basak, S.; Lefering, A.; Rogers, E.; Zandbergen, H.W.; Wagemaker, M.

    2014-01-01

    Chemisorbed water and solvent molecules and their reactivity with components from the electrolyte in high-surface nano-structured electrodes remains a contributing factor toward capacity diminishment on cycling in lithium ion batteries due to the limit in maximum annealing temperature. Here, we

  4. Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

    Science.gov (United States)

    Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

    2018-02-14

    We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

  5. Study of structural relaxation in amorphous alloys prepared by sputtering

    International Nuclear Information System (INIS)

    Habibi, S.; Banaee, N.; Majidy, S.

    2004-01-01

    Full text: We have prepared amorphous alloy of Al x Cu 1-x (with X= 93, 90, 80, 70, 30) using sputtering system. The rate of growth was 0.7 nm/sec. X-ray diffractometer was used to conform the amorphous nature of the prepared specimens. High temperature annealing can change amorphous to crystalline structure, while low temperature annealing may transform amorphous state to a more stable amorphous state via structural relaxation of the specimen and enhancing the properties of the alloys, such as mechanical ductility etc. Here we have annealed the alloys at temperatures 100, 150, 200, 250, 300 and 350 C for 1 hour. We observed that microhardness of the specimen increases with annealing and gets maximum value at 300 C. Our XRD experiments and also earlier Moessbauer studies show that while the average interatomic distances reduces due to annealing, structure remains amorphous

  6. Atomistic modeling of ion beam induced amorphization in silicon

    International Nuclear Information System (INIS)

    Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

    2005-01-01

    Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

  7. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  8. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  9. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

    International Nuclear Information System (INIS)

    Pochet, T.; Ilie, A.; Foulon, F.

    1993-01-01

    This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH 4 in helium. Rates of up to ten times (5.5 micrometer/h) that of the standard technique are obtained, allowing for the feasible fabrication of detectors having thickness up to 100 micrometers. The electrical characteristics (depletion voltage, residual space charge density) of the helium diluted material, have been investigated and compared to that of the standard material. The response of detectors, made from both materials, to 5.5 MeV alpha particles are compared. 6 figs., 5 tabs., 13 refs

  10. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    Science.gov (United States)

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

    Science.gov (United States)

    Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

  12. Highly ordered self-assembling polymer/clay nanocomposite barrier film.

    Science.gov (United States)

    Cook, Ray; Chen, Yihong; Beall, Gary W

    2015-05-27

    Efforts to mimic complex-structured biologically based materials such as abalone shell have occupied substantial research time and effort in science and engineering. The majority of the efforts involve tedious and expensive techniques and processes. Layer-by-layer (LBL) is one such technique that can produce materials with quite unique physical properties, approaching, and in some cases surpassing, those seen in nature. The LBL technique, however, is quite tedious and difficult to implement commercially. We report here the discovery of an organic/inorganic spontaneous self-assembling system that forms a highly structured nanocomposite. The driving force behind this self-assembly appears to be entropy. This discovery should open up completely new avenues to designing hierarchical composites and structures. The films have been studied by X-ray diffraction and the barrier properties for oxygen diffusion measured.

  13. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  14. High-efficiency dielectric barrier Xe discharge lamp: theoretical and experimental investigations

    International Nuclear Information System (INIS)

    Beleznai, Sz; Mihajlik, G; Agod, A; Maros, I; Juhasz, R; Nemeth, Zs; Jakab, L; Richter, P

    2006-01-01

    A dielectric barrier Xe discharge lamp producing vacuum-ultraviolet radiation with high efficiency was investigated theoretically and experimentally. The cylindrical glass body of the lamp is equipped with thin strips of metal electrodes applied to diametrically opposite sides of the outer surface. We performed a simulation of discharge plasma properties based on one-dimensional fluid dynamics and also assessed the lamp characteristics experimentally. Simulation and experimental results are analysed and compared in terms of voltage and current characteristics, power input and discharge efficiency. Using the proposed lamp geometry and fast rise-time short square pulses of the driving voltage, an intrinsic discharge efficiency around 56% was predicted by simulation, and more than 60 lm W -1 lamp efficacy (for radiation converted into visible green light by phosphor coating) was demonstrated experimentally

  15. Designing a highly sensitive Eddy current sensor for evaluating damage on thermal barrier coating

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong Min; Kim, Hak Joon; Song, Sung Jin; Seok, Chang Seong; Lee, Yeong Ze [Dept. of Mechanical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Lee, Seul Gi [LG Electronics, Seoul (Korea, Republic of)

    2016-06-15

    A thermal barrier coating (TBC) has been widely applied to machine components working under high temperature as a thermal insulator owing to its critical financial and safety benefits to the industry. However, the nondestructive evaluation of TBC damage is not easy since sensing of the microscopic change that occurs on the TBC is required during an evaluation. We designed an eddy current probe for evaluating damage on a TBC based on the finite element method (FEM) and validated its performance through an experiment. An FEM analysis predicted the sensitivity of the probe, showing that impedance change increases as the TBC thermally degrades. In addition, the effect of the magnetic shield concentrating magnetic flux density was also observed. Finally, experimental validation showed good agreement with the simulation result.

  16. Structure of amorphous sulfur

    CSIR Research Space (South Africa)

    Eichinger, BE

    2001-06-01

    Full Text Available The lambda-transition of elemental sulfur occurring at about 159°C has long been associated with the conversion of cyclic S8 rings (c-S8) to amorphous polymer (a-S) via a ring opening polymerization. It is demonstrated, with the use of both density...

  17. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  18. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  19. High temperature corrosion of thermally sprayed NiCr- and amorphous Fe-based coatings covered with a KCl-K{sub 2}SO{sub 4} salt

    Energy Technology Data Exchange (ETDEWEB)

    Varis, T.; Suhonen, T.; Tuurna, S.; Ruusuvuori, K.; Holmstroem, S.; Salonen, J. [VTT, Espoo (Finland); Bankiewicz, D.; Yrjas, P. [Aabo Akademi Univ., Turku (Finland)

    2010-07-01

    New process conditions due to the requirement of higher efficiency together with the use of high-chlorine and alkali containing fuels such as biomass and waste fuels for heat and electricity production will challenge the resistance and life of tube materials. In conventional materials the addition of alloying elements to increase the corrosion resistance in aggressive combustion conditions increases costs relatively rapidly. Thermally sprayed coating offer promising, effective, flexible and cost efficient solutions to fulfill the material needs for the future. Some heat exchanger design alteractions before global commercialization have to be overcome, though. High temperature corrosion in combustion plants can occur by a variety of mechanisms including passive scale degradation with subsequent rapid scaling, loss of adhesion and scale detachment, attack by melted or partly melted deposits via fluxing reactions and intergranular-/interlamellar corrosion. A generally accepted model of the ''active oxidation'' attributes the responsibility for inducing corrosion to chlorine. The active oxidation mechanism plays a key role in the thermally sprayed coatings due to their unique lamellar structure. In this study, the corrosion behaviour of NiCr (HVOF and Wire Arc), amorphous Fe-based, and Fe13Cr (Wire Arc) thermally sprayed coatings, were tested in the laboratory under simplified biomass combustion conditions. The tests were carried out by using a KCl-K{sub 2}SO{sub 4} salt mixture as a synthetic biomass ash, which was placed on the materials and then heat treated for one week (168h) at two different temperatures (550{sup 0}C and 600 C) and in two different gas atmospheres (air and air+30%H{sub 2}O). After the exposures, the metallographic cross sections of the coatings were studied with SEM/EDX analyzer. The results showed that the coatings behaved relatively well at the lower test temperature while critical corrosion through the lamella boundaries

  20. ¿Y ahora qué? Anticipated immigration status barriers and Latina/o high school students' future expectations.

    Science.gov (United States)

    McWhirter, Ellen Hawley; Ramos, Karina; Medina, Cynthia

    2013-07-01

    Latina/o high school students without documentation face a challenging situation when they graduate from high school, with pathways to work and postsecondary education stymied by their immigration status. We examined the effects of anticipated barriers associated with immigration status, age, and sex on the dependent variables of vocational outcome expectations, anticipated external and internal barriers, and postsecondary schooling plans in a sample of 475 Latina/o high school students. Findings include that students anticipating immigration status problems had lower vocational outcome expectations and anticipated more external barriers to pursuing their postsecondary plans. Latina girls and older high school students anticipating immigration status problems were more likely to plan to attend 2-year rather than 4-year colleges, and less likely to plan on postsecondary education, respectively. Implications for practice, policy, and research are discussed. PsycINFO Database Record (c) 2013 APA, all rights reserved.

  1. Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane

    International Nuclear Information System (INIS)

    Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyoung-Koo; Kaplan, S.N.; Perez-Mendez, V.; Mireshghi, Ali; Kitsuno, Yu

    1994-11-01

    Electrical transport properties of the authors PECVD a-Si:H material has been improved by using hydrogen and/or helium dilution of silane and lower substrate temperature for deposition. For hydrogen-diluted material they have measured electron and hole mobilities ∼ 4 times larger, and μτ values 2-3 times higher than for their standard a-Si:H. The density of ionized dangling bonds (N D *) also showed a factor of 5-10 improvement. Due to its higher conductivity, the improved a- Si:H material is more suitable than conventional a-Si:H for TFT applications. However, it is difficult to make thick layers by H-dilution because of high internal stress. On the other hand, thick detectors can be made at a faster rate and lower stress by low temperature deposition with He-dilution and subsequent annealing. The internal stress, which causes substrate bending and delamination, was reduced by a factor of 4 to ∼90 MPa, while the electronic quality was kept as good as that of the standard material. By this technique 35 μm-thick n-i-p diodes were made without significant substrate bending, and the electronic properties, such as electron mobility and ionized dangling bond density, were suitable for detecting minimum ionizing particles

  2. Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane

    International Nuclear Information System (INIS)

    Hong, W.S.; Drewery, J.S.; Jing, T.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.; Kitsuno, Y.

    1995-01-01

    Electrical transport properties of the PECVD a-Si:H material has been improved by using hydrogen and/or helium dilution of silane and lower substrate temperature for deposition. For hydrogen-diluted material the authors measured electron and hole mobilities ∼4 times larger, and microτ values 2--3 times higher than for the standard a-Si:H. The density of ionized dangling bonds (N D *) also showed a factor of 5--10 improvement. Due to its higher conductivity, the improved a-Si:H material is more suitable than conventional a-Si:H for TFT applications. However, it is difficult to make thick layers by H-dilution because of high internal stress. On the other hand, thick detectors can be made at a faster rate and lower stress by low temperature deposition with He-dilution and subsequent annealing. The internal stress, which causes substrate bending and delamination, was reduced by a factor of 4 to ∼90 MPa, while the electronic quality was kept as good as that of the standard material. By this technique 35 microm-thick n-i-p diodes were made without significant substrate bending, and the electronic properties, such as electron mobility and ionized dangling bond density, were suitable for detecting minimum ionizing particles

  3. Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

    Science.gov (United States)

    Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

    2017-09-01

    This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

  4. The Structure of Liquid and Amorphous Hafnia

    Directory of Open Access Journals (Sweden)

    Leighanne C. Gallington

    2017-11-01

    Full Text Available Understanding the atomic structure of amorphous solids is important in predicting and tuning their macroscopic behavior. Here, we use a combination of high-energy X-ray diffraction, neutron diffraction, and molecular dynamics simulations to benchmark the atomic interactions in the high temperature stable liquid and low-density amorphous solid states of hafnia. The diffraction results reveal an average Hf–O coordination number of ~7 exists in both the liquid and amorphous nanoparticle forms studied. The measured pair distribution functions are compared to those generated from several simulation models in the literature. We have also performed ab initio and classical molecular dynamics simulations that show density has a strong effect on the polyhedral connectivity. The liquid shows a broad distribution of Hf–Hf interactions, while the formation of low-density amorphous nanoclusters can reproduce the sharp split peak in the Hf–Hf partial pair distribution function observed in experiment. The agglomeration of amorphous nanoparticles condensed from the gas phase is associated with the formation of both edge-sharing and corner-sharing HfO6,7 polyhedra resembling that observed in the monoclinic phase.

  5. Development of internal transport barrier scenarios at ITER-relevant high triangularity in JET

    International Nuclear Information System (INIS)

    Rimini, F.G.; Becoulet, M.; Giovannozzi, E.; Lomas, P.J.; Tudisco, O.; Alper, B.; Crisanti, F.; Baar, M. de; Luna, E. de La; Vries, P. de; Ekedahl, A.; Hawkes, N.; Huysmans, G.; Litaudon, X.; Parail, V.; Saibene, G.; Tuccillo, A.A.; Zastrow, K.D.

    2005-01-01

    The development of scenarios characterized by H-mode confinement and internal transport barriers (ITBs) in high triangularity, δ ∼ 0.4-0.5, discharges is of particular interest for ITER advanced tokamak operation. Previous JET experiments have shown that high triangularity favours H-modes which are ELM-free or develop type I edge localized mode (ELM) activity, which inhibits long lasting ITBs. The recent experiments reported here concentrate on integrated optimization of edge and core conditions. The stability of the edge pedestal was controlled using gas injection, deuterium or light impurities, and plasma current ramps. Both methods yield more ITB-friendly edge pedestal conditions, varying from small type I to type III ELMs and, in extreme cases, resulting in L-mode. In parallel, the conditions for triggering and sustaining ITBs encompassing a large proportion of the plasma volume (outer ITBs) were optimized, as opposed to less performing ITBs located closer to the plasma centre (inner ITB). These plasmas have deeply reversed target current profiles with q min ∼ 3 and a narrow inner ITB, located typically at a small normalized radius ρ E , at q 95 = 7.5, H 89 β N ∼ 3.5-4 and ∼60% of the Greenwald density limit. In summary, a high triangularity scenario has been developed, which combines the desirable characteristics of controlled edge, long lasting wide ITBs and high performance at density higher than the low triangularity JET scenarios

  6. Barriers and opportunities for labels for highly energy-efficient houses

    International Nuclear Information System (INIS)

    Mlecnik, Erwin; Visscher, Henk; Van Hal, Anke

    2010-01-01

    Promoting energy efficiency in the building sector is essential if the agreements of the Kyoto Protocol are to be honoured. Different initiatives for energy labelling of highly energy-efficient residential buildings have emerged throughout Europe as an essential method to stimulate market demand, to control grants or to ensure the quality of demonstration projects with excellent energy performance. The paper identifies the barriers and opportunities for the further diffusion of labels for highly energy-efficient houses. A model based on the theory of the diffusion of innovation is developed to analyse perceived attributes of existing European labels. The paper investigates the innovation characteristics of existing labels in Europe, with a focus on advanced countries. The question of compatibility with the development of the European Energy Performance of Buildings Directive (EPBD) is examined in detail. We found that the diffusion of emerging and already existing voluntary European labels for highly energy-efficient houses is needed. Their complexity can be lowered and relative advantage, trialability, observability, and compatibility can be increased. EPBD calculation procedures should be able to receive highly energy-efficient houses. In the framework of the recast of the EPBD, official recognition of existing voluntary labels is recommended. (author)

  7. Amorphous Alloy: Promising Precursor to Form Nanoflowerpot

    Directory of Open Access Journals (Sweden)

    Guo Lan

    2014-01-01

    Full Text Available Nanoporous copper is fabricated by dealloying the amorphous Ti2Cu alloy in 0.03 M HF electrolyte. The pore and ligament sizes of the nanoporous copper can be readily tailored by controlling the dealloying time. The as-prepared nanoporous copper provides fine and uniform nanoflowerpots to grow highly dispersed Au nanoflowers. The blooming Au nanoflowers in the nanoporous copper flowerpots exhibit both high catalytic activity and stability towards the oxidation of glucose, indicating that the amorphous alloys are ideal precursors to form nanoflowerpot which can grow functional nanoflowers.

  8. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  9. Comparison of high temperature, high frequency core loss and dynamic B-H loops of two 50 Ni-Fe crystalline alloys and an iron-based amorphous alloy

    International Nuclear Information System (INIS)

    Wieserman, W.R.; Schwarze, G.E.; Niedra, J.M.

    1994-01-01

    The availability of experimental data that characterizes the performance of soft magnetic materials for the combined conditions of high temperature and high frequency is almost non-existent. An experimental investigation was conducted over the temperature range of 23 to 300 C and frequency range of 1 to 50 kHz to determine the effects of temperature and frequency on the core loss and dynamic B-H loops of three different soft magnetic materials; an oriented-grain 50Ni-50Fe alloy, a nonoriented-grain 50Ni-50Fe alloy, and an iron-based amorphous material (Metglas 2605SC). A comparison of these materials show that the nonoriented-grain 50Ni-50Fe alloy tends to have either the lowest or next lowest core loss for all temperatures and frequencies investigated

  10. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  11. Interdispersed amorphous MnO{sub x}-carbon nanocomposites with superior electrochemical performance as lithium-storage material

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Juchen; Wang, Chunsheng [Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD (United States); Liu, Qing; Zachariah, Michael R. [Department of Chemistry and Biochemistry, University of Maryland, College Park, MD (United States)

    2012-02-22

    The realization of manganese oxide anode materials for lithium-ion batteries is hindered by inferior cycle stability, rate capability, and high overpotential induced by the agglomeration of manganese metal grains, low conductivity of manganese oxide, and the high stress/strain in the crystalline manganese oxide structure during the repeated lithiation/delithiation process. To overcome these challenges, unique amorphous MnO{sub x}-C nanocomposite particles with interdispersed carbon are synthesized using aerosol spray pyrolysis. The carbon filled in the pores of amorphous MnO{sub x} blocks the penetration of liquid electrolyte to the inside of MnO{sub x}, thus reducing the formation of a solid electrolyte interphase and lowering the irreversible capacity. The high electronic and lithium-ion conductivity of carbon also enhances the rate capability. Moreover, the interdispersed carbon functions as a barrier structure to prevent manganese grain agglomeration. The amorphous structure of MnO{sub x} brings additional benefits by reducing the stress/strain of the conversion reaction, thus lowering lithiation/delithiation overpotential. As the result, the amorphous MnO{sub x}-C particles demonstrated the best performance as an anode material for lithium-ion batteries to date. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. New WC-Cu thermal barriers for fusion applications: High temperature mechanical behaviour

    Science.gov (United States)

    Tejado, E.; Dias, M.; Correia, J. B.; Palacios, T.; Carvalho, P. A.; Alves, E.; Pastor, J. Y.

    2018-01-01

    The combination of tungsten carbide and copper as a thermal barrier could effectively reduce the thermal mismatch between tungsten and copper alloy, which are proposed as base armour and heat sink, respectively, in the divertor of future fusion reactors. Furthermore, since the optimum operating temperature windows for these divertor materials do not overlap, a compatible thermal barrier interlayer between them is required to guarantee a smooth thermal transition, which in addition may mitigate radiation damage. The aim of this work is to study the thermo-mechanical properties of WC-Cu cermets fabricated by hot pressing. Focus is placed on the temperature effect and composition dependence, as the volume fraction of copper varies from 25 to 50 and 75 vol%. To explore this behaviour, fracture experiments are performed within a temperature range from room temperature to 800 °C under vacuum. In addition, elastic modulus and thermal expansion coefficient are estimated from these tests. Results reveal a strong dependence of the performance on temperature and on the volume fraction of copper and, surprisingly, a slight percent of Cu (25 vol%) can effectively reduce the large difference in thermal expansion between tungsten and copper alloy, which is a critical point for in service applications. The thermal performance of these materials, together with their mechanical properties could indeed reduce the heat transfer from the PFM to the underlying element while supporting the high thermal stresses of the joint. Thus, the presence of these cermets could allow the reactor to operate above the ductile to brittle transition temperature of tungsten, without compromising the underlying materials.

  13. Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

    NARCIS (Netherlands)

    Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

    2017-01-01

    A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750?cm-1 to unravel the

  14. On barrier performance of high compaction bentonite in facilities of disposing high level radioactive wastes in formation

    International Nuclear Information System (INIS)

    Ikeda, Hidefumi; Komada, Hiroya

    1989-01-01

    As for the method of disposing high level radioactive wastes generated in the reprocessing of spent fuel, at present formation disposal is regarded as most promising. The most important point in this formation disposal is to prevent the leak of radioactive nuclides within the disposal facilities into bedrocks and their move to the zone of human life. As the method of formation disposal, the canisters containing high level radioactive wastes are placed in the horizontal or vertical holes for disposal dug from horizontal tunnels which are several hundreds m underground, and the tunnels and disposal holes are filled again. For this filling material, the barrier performance to prevent and retard the leak of radioactive nuclides out of the disposal facilities is expected, and the characteristics of low water permeability, the adsorption of nuclides and long term stability are required. However, due to the decay heat of wastes just after the disposal, high temperature and drying condition arises, and this must be taken in consideration. The characteristics required for filling materials and the selection of the materials, the features and classification of bentonite, the properties of high compaction bentonite, and the move of water, heat and nuclides in high compaction bentonite are reported.(Kako, I.)

  15. Quantitative comparison using Generalized Relative Object Detectability (G-ROD) metrics of an amorphous selenium detector with high resolution Microangiographic Fluoroscopes (MAF) and standard flat panel detectors (FPD).

    Science.gov (United States)

    Russ, M; Shankar, A; Jain, A; Setlur Nagesh, S V; Ionita, C N; Scott, C; Karim, K S; Bednarek, D R; Rudin, S

    2016-02-27

    A novel amorphous selenium (a-Se) direct detector with CMOS readout has been designed, and relative detector performance investigated. The detector features include a 25 μ m pixel pitch, and 1000 μ m thick a-Se layer operating at 10V/ μ m bias field. A simulated detector DQE was determined, and used in comparative calculations of the Relative Object Detectability (ROD) family of prewhitening matched-filter (PWMF) observer and non-prewhitening matched filter (NPWMF) observer model metrics to gauge a-Se detector performance against existing high resolution micro-angiographic fluoroscopic (MAF) detectors and a standard flat panel detector (FPD). The PWMF-ROD or ROD metric compares two x-ray imaging detectors in their relative abilities in imaging a given object by taking the integral over spatial frequencies of the Fourier transform of the detector DQE weighted by an object function, divided by the comparable integral for a different detector. The generalized-ROD (G-ROD) metric incorporates clinically relevant parameters (focal-spot size, magnification, and scatter) to show the degradation in imaging performance for detectors that are part of an imaging chain. Preliminary ROD calculations using simulated spheres as the object predicted superior imaging performance by the a-Se detector as compared to existing detectors. New PWMF-G-ROD and NPWMF-G-ROD results still indicate better performance by the a-Se detector in an imaging chain over all sphere sizes for various focal spot sizes and magnifications, although a-Se performance advantages were degraded by focal spot blurring. Nevertheless, the a-Se technology has great potential to provide breakthrough abilities such as visualization of fine details including of neuro-vascular perforator vessels and of small vascular devices.

  16. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1994-11-01

    Previous investigations using 40 Ar ion bombardments have revealed that Zr 3 Fe, which has an orthorhombic crystal structure, undergoes an irradiation-induced transformation from the crystalline to the amorphous state. In the present investigation, 0.9 MeV electron irradiations were performed at 28 - 220 K in a high-voltage electron microscope (HVEM). By measuring the onset, spread and final size of the amorphous region, factoring in the Gaussian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼ 220 K, compared with 570 - 625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the dose-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a given dose, the final size decreasing with increasing temperature, and it is argued that this is related to the existence of a critical dose rate, which increases with temperature, and below which no amorphization occurs. (author). 26 refs., 6 figs

  17. EB-PVD process management for highly productive zirconia thermal barrier coating of turbine blades

    International Nuclear Information System (INIS)

    Reinhold, E.; Botzler, P.; Deus, C.

    1999-01-01

    Zirconia thermal barrier coatings are well used in the turbine manufacturing industry because they ensure extended lifetimes of turbine blades. Compared with other techniques, EB-PVD processes are best suited for the deposition on turbine blades with regard to the layer properties. Therefore EB-PVD coaters for turbine blades are becoming increasingly interesting. The coating costs per component are mainly dependent on a highly productive solution for the deposition task. Thus the EB-PVD process management has to be optimized in order to meet the productivity requirements of the manufacturers. This includes the requirement of high deposition rates, large deposition areas, long time stable production cycles as well as a matched duration of preheating, deposition and cooling down per charge. Modern EB-PVD solutions to be introduced allow deposition rates on blades up to 7 μm/min. The consequences for the technological process management and plant design concerning long time stable coating cycles with high productivity will be discussed. (orig.)

  18. Stakeholder Perceptions of Barriers and Solutions to Significant Expansion of Postsecondary Enrollment Options for High School Students

    Directory of Open Access Journals (Sweden)

    Carl Wozniak

    2013-02-01

    Full Text Available Post-secondary experiences for students still in high school have been promoted as a means to increase academic rigor and create a better-trained workforce. Yet little is known regarding supports needed to significantly increase such options. This study obtained input from 411 stakeholders in one Midwestern state, including 201 district superintendents, 181 high school principals, and 23 college dual enrollment officers regarding their use of these options, their perceptions of barriers to program expansion, and their ranking of possible solutions to overcome the barriers. Findings demonstrate that all parties find postsecondary options of value, with traditional dual enrollment the most used option. Although all groups identified funding as a primary barrier, other systemic barriers were of great concern. Participants suggest that expansion of Advanced Placement and early and middle college programs, financial assistance for dually enrolled students, and increased program availability for career and technical options would be beneficial.Wozniak, Carl, (2012. Stakeholder Perceptions of Barriers and Solutions to Significant Expansion of Postsecondary Enrollment Options for High School Students. 8(2. Retrieved from www.ijepl.org .

  19. Development of internal transport barrier scenarios at ITER-relevant high triangularity in Jet

    Energy Technology Data Exchange (ETDEWEB)

    Rimini, F.G.; Becoulet, M.; Ekedahl, A.; Huysmans, G.; Joffrin, E.; Litaudon, X. [Association Euratom-CEA, Centre d' Etudes de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Giovannozzi, E.; Tudisco, O.; Crisanti, F. [Association Euratol/ENEA/CNR sulla Fusione, Frascali, Rome (Italy); Lomas, P.J.; Alper, B.; Hawkes, N.; Parail, V.; Zastrow, K.D. [Euratom/UKAEA Fusion Association, Culham Science Centre, Abingdon (United Kingdom); Baar, M. de; Vries, P. de [Association Euratom-Fom, TEC Cluster, Nieuwegein (Netherlands); La Luna, E. de [Association Euratom-Ciemat, Madrid (Spain); Saibene, G. [EFDA CSU, Garching (Germany)

    2004-07-01

    The development of ITB s(Internal Transport Barrier) scenarios in high triangularity discharges is of particular interest for ITER advanced tokamak operation. Previous JET experiments have shown that high triangularity favours ELM (Edge Localized Mode)-Free or type I ELMs, which inhibit long lasting ITBs. The recent experiments reported here concentrate on integrated optimisation of edge and core conditions. Edge pedestal was controlled using gas injection, Deuterium or light impurities, and plasma current ramps. Both methods yield more ITB-friendly edge pedestal conditions, varying from small type I to type III ELMs and, in extreme cases, to L-mode edge. In parallel, the conditions for triggering and sustaining a wide ITB were optimised. This plasmas have deeply reversed target current profiles with g{sub min} 3. A narrow inner ITB, located in the reversed shear region, is routinely observed. Large radius ITBs are only triggered when the input power exceeds 20-22 MW, but they do not usually survive the transition into H-mode. The best results, in terms of sustained high performance, have been obtained with Neon injection: a wide ITB is triggered during the phase with L-mode edge and survives into H-mode for about 2 s at H{sub 89}{beta}{sub N} {approx} 3.5 and {approx} 60% of the Greenwald density limit. In summary, a high triangularity scenario has been developed, which combines the desirable I characteristics of controlled edge, long lasting wide ITBs and high performance at density higher than the low triangularity JET scenarios. (authors)

  20. Optimization of High Porosity Thermal Barrier Coatings Generated with a Porosity Former

    Science.gov (United States)

    Medřický, Jan; Curry, Nicholas; Pala, Zdenek; Vilemova, Monika; Chraska, Tomas; Johansson, Jimmy; Markocsan, Nicolaie

    2015-04-01

    Yttria-stabilized zirconia thermal barrier coatings are extensively used in turbine industry; however, increasing performance requirements have begun to make conventional air plasma sprayed coatings insufficient for future needs. Since the thermal conductivity of bulk material cannot be lowered easily; the design of highly porous coatings may be the most efficient way to achieve coatings with low thermal conductivity. Thus the approach of fabrication of coatings with a high porosity level based on plasma spraying of ceramic particles of dysprosia-stabilized zirconia mixed with polymer particles, has been tested. Both polymer and ceramic particles melt in plasma and after impact onto a substrate they form a coating. When the coating is subjected to heat treatment, polymer burns out and a complex structure of pores and cracks is formed. In order to obtain desired porosity level and microstructural features in coatings; a design of experiments, based on changes in spray distance, powder feeding rate, and plasma-forming atmosphere, was performed. Acquired coatings were evaluated for thermal conductivity and thermo-cyclic fatigue, and their morphology was assessed using scanning electron microscopy. It was shown that porosity level can be controlled by appropriate changes in spraying parameters.

  1. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Science.gov (United States)

    Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

    2006-10-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  2. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, James M [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Trump, Darryl D [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Bletzinger, Peter [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Ganguly, Biswa N [Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7919 (United States)

    2006-10-21

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s{sup -1}. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of {approx}3 x 10{sup 15} cm{sup -3} at 25 W. The maximum ozone production achieved by short-pulse excitation was {approx}8.5 x 10{sup 15} cm{sup -3} at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  3. Facile synthesis of high strength hot-water wood extract films with oxygen-barrier performance

    Science.gov (United States)

    Chen, Ge-Gu; Fu, Gen-Que; Wang, Xiao-Jun; Gong, Xiao-Dong; Niu, Ya-Shuai; Peng, Feng; Yao, Chun-Li; Sun, Run-Cang

    2017-01-01

    Biobased nanocomposite films for food packaging with high mechanical strength and good oxygen-barrier performance were developed using a hot-water wood extract (HWE). In this work, a facile approach to produce HWE/montmorillonite (MMT) based nanocomposite films with excellent physical properties is described. The focus of this study was to determine the effects of the MMT content on the structure and mechanical properties of nanocomposites and the effects of carboxymethyl cellulose (CMC) on the physical properties of the HWE-MMT films. The experimental results suggested that the intercalation of HWE and CMC in montmorillonite could produce compact, robust films with a nacre-like structure and multifunctional characteristics. This results of this study showed that the mechanical properties of the film designated FCMC0.05 (91.5 MPa) were dramatically enhanced because the proportion of HWE, MMT and CMC was 1:1.5:0.05. In addition, the optimized films exhibited an oxygen permeability below 2.0 cm3 μm/day·m2·kPa, as well as good thermal stability due to the small amount of CMC. These results provide a comprehensive understanding for further development of high-performance nanocomposites which are based on natural polymers (HWE) and assembled layered clays (MMT). These films offer great potential in the field of sustainable packaging.

  4. High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

    Science.gov (United States)

    Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

    2014-01-01

    Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

  5. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    International Nuclear Information System (INIS)

    Williamson, James M; Trump, Darryl D; Bletzinger, Peter; Ganguly, Biswa N

    2006-01-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s -1 . The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ∼3 x 10 15 cm -3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ∼8.5 x 10 15 cm -3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level

  6. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  7. Paramagnetic defects in hydrogenated amorphous carbon powders

    International Nuclear Information System (INIS)

    Keeble, D J; Robb, K M; Smith, G M; Mkami, H El; Rodil, S E; Robertson, J

    2003-01-01

    Hydrogenated amorphous carbon materials typically contain high concentrations of paramagnetic defects, the density of which can be quantified by electron paramagnetic resonance (EPR). In this work EPR measurements near 9.5, 94, and 189 GHz have been performed on polymeric and diamond-like hydrogenated amorphous carbon (a-C:H) powder samples. A similar single resonance line was observed at all frequencies for the two forms of a-C:H studied. No contributions to the spectrum from centres with resolved anisotropic g-values as reported earlier were detected. An increase in linewidth with microwave frequency was observed. Possible contributions to this frequency dependence are discussed

  8. Porosity and mechanical properties of amorphous alloys

    International Nuclear Information System (INIS)

    Betekhtin, V.I.; Kadomtsev, A.G.; Amosova, O.V.

    2003-01-01

    The obtained experimental data on the effect of the inherent submicroporosity and its change under impact of high hydrostatic pressure or annealing on the strength, microdestruction, embrittlement temperature, the first crystallization stage and peculiarities of the surface crystallization of the amorphous alloys are analyzed. The conclusion is made on the basis of the studies on the peculiarities of the voluminous and surface crystallization of the Fe 56 Co 24 Si 5 B 15 , Fe 78 Ni 2 Si 8 B 12 , Fe 85 B 15 , Fe 58 Ni 20 Si 9 B 13 amorphous alloys that the increase in the inherent submicroporosity is one of the essential factors facilitating crystallization [ru

  9. A heating and diffusion barrier based on TaSiN x for miniaturized IC devices

    International Nuclear Information System (INIS)

    Cheng, H.-Y.; Chen, Y.-C.; Lee, C.-M.; Wang, S.-H.; Chin, T.-S.

    2006-01-01

    Highly resistive TaSiN x films investigated as candidates for heating and diffusion-barrier layers for miniaturized IC devices such as a sensor or a phases-change random access memory (PCRAM). The obtained resistivity, between 0.069-1.21 Ω cm, increases with increasing nitrogen content up to 52.83%, and fulfills the requirements as a suitable heating layer. All the as-deposited films were amorphous, and the films with substantial nitrogen content showed excellent thermal stability The amorphous structure had a very smooth surface which was stable at temperatures up to 800 deg. C. In addition to its heating capability, the amorphous structure with no grain boundaries was found to also act as a good diffusion barrier effect in contact with a tungsten electrode as determined by AES an TEM analysis. The barrier effect was evaluated by an annealing at 500 and 600 deg. C in Ar atmosphere for 30 min, respectively. The highly resistive TaSiN x heating layer successfully obstructed the diffusion of tungsten atoms from the W electrodes even when the layer was only 10 nm thick. With increasing N content, the heating and diffusion-barrier layer for PCRAM was proposed as a typical example of many potential applications

  10. Effect of process control agent on the structural and magnetic properties of nano/amorphous Fe0.7Nb0.1Zr0.1Ti0.1 powders prepared by high energy ball milling

    Science.gov (United States)

    Khazaei Feizabad, Mohammad Hossein; Sharafi, Shahriar; Khayati, Gholam Reza; Ranjbar, Mohammad

    2018-03-01

    In this study, amorphous Fe0.7Nb0.1Zr0.1Ti0.1 alloy without metalloids was produced by mechanical alloying of pure mixture elements. Miedema's semi-empirical model was employed to predict the possibility of amorphous phase formation in proposed alloying system. The effect of Hexane as process control agent (PCA) on the structural, magnetic, morphological and thermal properties of the products was investigated. The results showed that the presence of PCA was necessary for the formation of amorphous phase as well as improved its soft magnetic properties. The PCA addition causes an increase of the saturation magnetization (about 43%) and decrease of the coercivity (about 50%). Moreover, the sample milled without PCA, showed a wide particle size distribution as well as relatively spherical geometry. While, in the presence of PCA the powders were aspherical and Polygon. In addition, the crystallization and Curie temperatures were found to be around 800 °C and 650 °C, respectively which are relatively high values for these kinds of alloys.

  11. Methods of amorphization and investigation of the amorphous state

    OpenAIRE

    EINFALT, TOMAŽ; PLANINŠEK, ODON; HROVAT, KLEMEN

    2013-01-01

    The amorphous form of pharmaceutical materials represents the most energetic solid state of a material. It provides advantages in terms of dissolution rate and bioavailability. This review presents the methods of solid-state amorphization described in literature (supercooling of liquids, milling, lyophilization, spray drying, dehydration of crystalline hydrates), with the emphasis on milling. Furthermore, we describe how amorphous state of pharmaceuticals differ depending on method of prepara...

  12. Intrinsic charge trapping in amorphous oxide films: status and challenges

    Science.gov (United States)

    Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

    2018-06-01

    We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

  13. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    moves from low preparation temperature to high preparation temperature. The amorphous .... nm and the interac- tion between the pi-electron clouds of the two layers re- .... sp2 configuration forms to minimize stress and making. C900 films ...

  14. Pressure-induced transformations in amorphous silicon: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Garcez, K. M. S., E-mail: kmgarcez@ufma.br [Universidade Federal do Maranhão, 65700-000 Bacabal, Maranhão (Brazil); Antonelli, A., E-mail: aantone@ifi.unicamp.br [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, UNICAMP, 13083-859 Campinas, São Paulo (Brazil)

    2014-02-14

    We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

  15. Pressure-induced transformations in amorphous silicon: A computational study

    Science.gov (United States)

    Garcez, K. M. S.; Antonelli, A.

    2014-02-01

    We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

  16. Tensile toughness test and high temperature fracture analysis of thermal barrier coatings

    International Nuclear Information System (INIS)

    Qian, G.; Nakamura, T.; Berndt, C.C.; Leigh, S.H.

    1997-01-01

    In this paper, an effective fracture toughness test which uses interface fracture mechanics theory is introduced. This method is ideally suited for determining fracture resistance of multilayered thermal barrier coatings (TBCs) consisting of ceramic and bond layers and, unlike other fracture experiments, requires minimal set-up over a simple tensile adhesion test. Furthermore, while other test methods usually use edge cracked specimens, the present test models a crack embedded within the coatings, which is more consistent with actual TBCs where failure initiates from internal voids or defects. The results of combined computational and experimental analysis show that any defects located within the ceramic coating can significantly weaken a TBC, whereas the debonding resistances of the bond coating and its interfaces are found to be much higher. In a separate analysis, the authors have studied fracture behavior of TBCs subjected to thermal loading in a high temperature environment. The computed fracture parameters reveal that when the embedded crack size is on order of the coating thickness, the fracture driving force is comparable to the fracture resistance of the coating found in the toughness test. In addition, the major driving force for fracture derives from the thermal insulating effect across the crack faces rather than the mismatch in the coefficients of thermal expansion. The authors have also investigated the effects of functionally graded material (FGM) within TBCs and found its influences on the fracture parameters to be small. This result implies that the FGM may not contribute toward enhancing the fracture toughness of the TBCs considered here

  17. Accelerated high fidelity prion amplification within and across prion species barriers.

    Directory of Open Access Journals (Sweden)

    Kristi M Green

    2008-08-01

    Full Text Available Experimental obstacles have impeded our ability to study prion transmission within and, more particularly, between species. Here, we used cervid prion protein expressed in brain extracts of transgenic mice, referred to as Tg(CerPrP, as a substrate for in vitro generation of chronic wasting disease (CWD prions by protein misfolding cyclic amplification (PMCA. Characterization of this infectivity in Tg(CerPrP mice demonstrated that serial PMCA resulted in the high fidelity amplification of CWD prions with apparently unaltered properties. Using similar methods to amplify mouse RML prions and characterize the resulting novel cervid prions, we show that serial PMCA abrogated a transmission barrier that required several hundred days of adaptation and subsequent stabilization in Tg(CerPrP mice. While both approaches produced cervid prions with characteristics distinct from CWD, the subtly different properties of the resulting individual prion isolates indicated that adaptation of mouse RML prions generated multiple strains following inter-species transmission. Our studies demonstrate that combined transgenic mouse and PMCA approaches not only expedite intra- and inter-species prion transmission, but also provide a facile means of generating and characterizing novel prion strains.

  18. Role of high-temperature creep stress in thermally grown oxide growth of thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Ogawa, K.; Nakao, Y.; Seo, D.; Miura, H.; Shoji, T. [Tohoku Univ., Sendai (Japan)

    2008-07-01

    Thermally grown oxide (TGO) grows at the top / bond coating interface of the thermal barrier coating (TBC) in service. It is supposed that the failures of the TBC occur due to thermal stress and the decrease of adhesive strength caused by the TGO growth. Recently, large local stress has been found to change both the diffusion constant of oxygen through an existing oxide and the rate of chemical reaction at the oxide / oxidized material interface. Since high thermal stress occurs in the TBC, the volume expansion of the newly grown oxide, and centrifugal force, the growth rate of the TGO may change depending on not only temperature but also the stress. The aim of this study is to make clear the influence of stress on the growth rate of the TGO quantitatively. As a result, the thickness of the TGO clearly increases with increase of the amplitude of the applied stress and temperature. The increase rate of the TGO thickness is approximately 23% when the applied stress is increased from 0 to 205 MPa at 900 C, and approximately 29% when the stress is increased from 0 to 150 MPa at 950 C. (orig.)

  19. Pulse-height response of silicon surface-barrier detectors to high-energy heavy ions

    International Nuclear Information System (INIS)

    Smith, G.D.

    1973-01-01

    The pulse-height defect (PHD) of high-energy heavy ions in silicon surface-barrier detectors can be divided into three components: (1) energy loss in the gold-surface layer, (2) a nuclear-stopping defect, and (3) a defect due to recombination of electron-hole pairs in the plasma created by the heavy ion. The plasma recombination portion of the PHD was the subject of this study using the variation of the PHD with (1) the angle of incidence of incoming heavy ions, and (2) changes in the detector bias. The Tandem Van de Graaff accelerator at Argonne National Laboratory was used to produce scattered beam ions ( 32 S, 35 Cl) and heavy target recoils (Ni, Cu, 98 Mo, Ag, Au) at sufficient energies to produce a significant recombination defect. The results confirm the existence of a recombination zone at the front surface of these detectors and the significance of plasma recombination as a portion of the pulse-height defect. (Diss. Abstr. Int., B)

  20. Containment barrier metals for high-level waste packages in a Tuff repository

    Energy Technology Data Exchange (ETDEWEB)

    Russell, E.W.; McCright, R.D.; O`Neal, W.C.

    1983-10-12

    The Nevada Nuclear Waste Storage Investigations (NNWSI) Waste Package project is part of the US Department of Energy`s Civilian Radioactive Waste Management (CRWM) Program. The NNWSI project is working towards the development of multibarriered packages for the disposal of spent fuel and high-level waste in tuff in the unsaturated zone at Yucca Mountain at the Nevada Test Site (NTS). The final engineered barrier system design may be composed of a waste form, canister, overpack, borehole liner, packing, and the near field host rock, or some combination thereof. Lawrence Livermore National Laboratory`s (LLNL) role is to design, model, and test the waste package subsystem for the tuff repository. At the present stage of development of the nuclear waste management program at LLNL, the detailed requirements for the waste package design are not yet firmly established. In spite of these uncertainties as to the detailed package requirements, we have begun the conceptual design stage. By conceptual design, we mean design based on our best assessment of present and future regulatory requirements. We anticipate that changes will occur as the detailed requirements for waste package design are finalized. 17 references, 4 figures, 10 tables.

  1. Containment barrier metals for high-level waste packages in a Tuff repository

    International Nuclear Information System (INIS)

    Russell, E.W.; McCright, R.D.; O'Neal, W.C.

    1983-01-01

    The Nevada Nuclear Waste Storage Investigations (NNWSI) Waste Package project is part of the US Department of Energy's Civilian Radioactive Waste Management (CRWM) Program. The NNWSI project is working towards the development of multibarriered packages for the disposal of spent fuel and high-level waste in tuff in the unsaturated zone at Yucca Mountain at the Nevada Test Site (NTS). The final engineered barrier system design may be composed of a waste form, canister, overpack, borehole liner, packing, and the near field host rock, or some combination thereof. Lawrence Livermore National Laboratory's (LLNL) role is to design, model, and test the waste package subsystem for the tuff repository. At the present stage of development of the nuclear waste management program at LLNL, the detailed requirements for the waste package design are not yet firmly established. In spite of these uncertainties as to the detailed package requirements, we have begun the conceptual design stage. By conceptual design, we mean design based on our best assessment of present and future regulatory requirements. We anticipate that changes will occur as the detailed requirements for waste package design are finalized. 17 references, 4 figures, 10 tables

  2. Development of spraying methods for high density bentonite barriers. Part 3. Field investigation of spraying methods

    International Nuclear Information System (INIS)

    Tanaka, Toshiyuki; Nakajima, Makoto; Kobayashi, Ichizo; Toida, Masaru; Fukuda, Katsumi; Sato, Tatsuro; Nonaka, Katsumi; Gozu, Keisuke

    2007-01-01

    The authors have developed a new method of constructing high density bentonite barriers by means of a wet spraying method. Using this method, backfill material can be placed in narrow upper and side parts in a low-level radioactive waste disposal facility. Using a new supplying machine for bentonite, spraying tests were conducted to investigate the conditions during construction. On the basis of the test results, the various parameters for the spraying method were investigated. The test results are summarized as follows: 1. The new machine supplied about twice the weight of material supplied by a screw conveyor. A dry density of spraying bentonite 0.05 Mg/m 3 higher than that of a screw conveyor with the same water content could be achieved. 2. The dry density of sprayed bentonite at a boundary with concrete was the same as that at the center of the cross section. 3. The variation in densities of bentonite sprayed in the vertical downward and horizontal directions was small. Also, density reduction due to rebound during spraying was not seen. 4. Bentonite controlled by water content could be sprayed smoothly in the horizontal direction by a small machine. Also rebound could be collected by a machine conveying air. (author)

  3. The Stabilization of Amorphous Zopiclone in an Amorphous Solid Dispersion.

    Science.gov (United States)

    Milne, Marnus; Liebenberg, Wilna; Aucamp, Marique

    2015-10-01

    Zopiclone is a poorly soluble psychotherapeutic agent. The aim of this study was to prepare and characterize an amorphous form of zopiclone as well as the characterization and performance of a stable amorphous solid dispersion. The amorphous form was prepared by the well-known method of quench-cooling of the melt. The solid dispersion was prepared by a solvent evaporation method of zopiclone, polyvinylpyrrolidone-25 (PVP-25), and methanol, followed by freeze-drying. The physico-chemical properties and stability of amorphous zopiclone and the solid dispersion was studied using differential scanning calorimetry (DSC), infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), hot-stage microscopy (HSM), X-ray diffractometry (XRD), solubility, and dissolution studies. The zopiclone amorphous solid-state form was determined to be a fragile glass; it was concluded that the stability of the amorphous form is influenced by both temperature and water. Exposure of amorphous zopiclone to moisture results in rapid transformation of the amorphous form to the crystalline dihydrated form. In comparison, the amorphous solid dispersion proved to be more stable with increased aqueous solubility.

  4. High-temperature stability of yttria-stabilized zirconia thermal barrier ...

    Indian Academy of Sciences (India)

    temperature drop was found to increase with the coating thickness of YSZ. The coatings ... thermal barrier coating system on niobium alloys for supersonic vehicles. .... Voltage (V). 75 ..... However, distribution of the other elements; such as Ni,.

  5. Self-Efficacy, Perceptions of Barriers, Vocational Identity, and the Career Exploration Behavior of Latino/a High School Students

    Science.gov (United States)

    Gushue, George V.; Clarke, Christine P.; Pantzer, Karen M.; Scanlan, Kolone R. L.

    2006-01-01

    This study explored the potential relationship between the social cognitive variables of career decision making self-efficacy and perceptions of barriers and the outcome variables of vocational identity and career exploration behaviors in a sample of 128 urban Latino/a high school students. The results indicated that higher levels of career…

  6. Motivators of and Barriers to Health-Promoting Behaviors among Culturally Diverse Middle and High School Students

    Science.gov (United States)

    Wippold, Guillermo M.; Tucker, Carolyn M; Smith, Tasia M.; Rodriguez, Victoria A.; Hayes, Lynda F.; Folger, Austin C.

    2018-01-01

    Background: Youth obesity in the United States is a major health concern. Obesity can be reduced by increasing health-promoting behaviors. Purpose: The goals of the present study were to (1) identify the strongest motivators of and barriers to health-promoting behaviors among a culturally diverse group of middle and high school students and (2)…

  7. High School Teachers' Perspectives on Supporting Students with Visual Impairments toward Higher Education: Access, Barriers, and Success

    Science.gov (United States)

    Reed, Maureen; Curtis, Kathryn

    2011-01-01

    The objective of the study presented here was to understand the experiences of teachers in assisting students with visual impairments in making the transition to higher education. The teachers reported barriers in high school that affect students' access to and success in higher education. Furthermore, institutions of higher education provided…

  8. Do Barriers to Crime Prevention Moderate the Effects of Situational Crime Prevention Policies on Violent Crime in High Schools?

    Science.gov (United States)

    Sevigny, Eric L.; Zhang, Gary

    2018-01-01

    This study investigates how barriers to school-based crime prevention programming moderate the effects of situational crime prevention (SCP) policies on levels of violent crime in U.S. public high schools. Using data from the 2008 School Survey on Crime and Safety, we estimate a series of negative binomial regression models with interactions to…

  9. Barriers to Condom Use among High Risk Men Who Have Sex with Men in Uganda: A Qualitative Study.

    Directory of Open Access Journals (Sweden)

    Geofrey Musinguzi

    Full Text Available Unprotected sexual intercourse is a major risk factor for HIV transmission. Men who have sex with men (MSM face challenges in accessing HIV prevention services, including condoms. However, there is limited in-depth assessment and documentation of the barriers to condom use among MSM in sub-Saharan Africa. In this paper, we examine the barriers to condom use among MSM in Uganda.The data for this study were extracted from a larger qualitative study conducted among 85 self-identified adult (>18 years MSM in 11 districts in Uganda between July and December 2013. Data on sexual behaviours and access and barriers to condom use were collected using semi-structured interviews. All interviews were audio-recorded and transcribed verbatim. This paper presents an analysis of data for 33 MSM who did not use condoms at last sex, with a focus on barriers to condom use. Analysis was conducted using the content analysis approach.Six major barriers to condom use were identified: Difficulties with using condoms, access challenges, lack of knowledge and misinformation about condom use, partner and relationship related issues, financial incentives and socio-economic vulnerability, and alcohol consumption.The findings suggest that several reasons account for lack of condom use among high-risk MSM. The findings are valuable to inform interventions needed to increase condom use among MSM.

  10. Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

    International Nuclear Information System (INIS)

    Huang, Lingqin; Wang, Dejun

    2015-01-01

    The barrier characteristics of Pt contacts to relatively highly doped (∼1 × 10 18  cm −3 ) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160–573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160–323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from the thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures

  11. Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics

    International Nuclear Information System (INIS)

    Kim, Namsu; Graham, Samuel

    2013-01-01

    A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate. The film's effective water vapor transmission rate was 2.4 ± 1.5 × 10 −5 g/m 2 /day at 20 °C and 50% relative humidity. Flexural tests revealed that for films deposited on the polyethylene terephthalate substrate, the barrier layer failed due to cracking at a curvature radius of 6.4 mm, corresponding to a strain of 0.8%. Adding an epoxy top coat of suitable thickness shifted the neutral axis toward the encapsulation layer, reducing the induced strain. Barrier performance was maintained under the 6.4 mm radius of curvature in this encapsulation structure. Thus, shifting the neutral axis via device structural design is an effective method of extending the flexibility of thin-film encapsulation structure without compromising the performance loss as a barrier layer. - Highlights: • High performance barrier is fabricated on flexible substrate. • The water vapor transmission rate is 2.4 ± 1.5 × 10 −5 g/m 2 /day. • The structure maintains its performance under a small radius of bending curvature

  12. {sup 2}H-NMR study of amorphous and crystalline high pressure ice phases; {sup 2}H-NMR-Untersuchungen an amorphen und kristallinen Hochdruckeisphasen

    Energy Technology Data Exchange (ETDEWEB)

    Scheuermann, Marco

    2008-10-27

    The objective of this work was to produce different high pressure ice phases and measure them at ambient pressure. Temperature dependent relaxation measurements were performed for the first time. All three amorphous ices differ significantly in their temperature dependent T1-values. Applying a heating rate of 1 K/h the transformation of HDA into LDA takes place at a temperature of 105 K. By contrast, warming up VHDA to temperatures above 105 K leads to a relaxed form with relaxation times that resemble the values of HDA. This modification eventually transforms into LDA at 115 K. Our data analysis indicates that this intermediate state is not an inhomogeneous mixture of VHDA and LDA, suggesting that the VHDA/LDA transition is not of a simple first order type. In ice II relaxation measurements and stimulated echo experiments were performed for the first time. The observed temperature of the transition from ice II to cubic ice, 145 K, is consistent with literature data, considering our heating rate of about 1 K/day. The relaxation curves show a bimodal evolution. This is not due to structural heterogeneities, because additional X-ray diffraction measurements exclude a contamination of our samples with other ice phases. The slow relaxing component displays no temperature dependence. The time constant of the fast component reveals Arrhenius-like behaviour, although the activation energy is only 2 kJ/mol. Such a small value can not be attributed to reorientation dynamics as the origin of relaxation in ice II. The decay of the stimulated echo is only about one order of magnitude faster than the decay due to spin-lattice relaxation. The resulting correlation time is temperature independent. Hence, the loss of correlation can not be due to molecular dynamics. But it could stem from spin diffusion, which is known to induce frequency shifts of individual spins in deuteron systems. This interpretation is supported by the analysis of the geometry of the underlying process. The

  13. Barriers and enablers to the use of high-fidelity patient simulation manikins in nurse education: an integrative review.

    Science.gov (United States)

    Al-Ghareeb, Amal Z; Cooper, Simon J

    2016-01-01

    This integrative review identified, critically appraised and synthesised the existing evidence on the barriers and enablers to using high-fidelity human patient simulator manikins (HPSMs) in undergraduate nursing education. In nursing education, specifically at the undergraduate level, a range of low to high-fidelity simulations have been used as teaching aids. However, nursing educators encounter challenges when introducing new teaching methods or technology, despite the prevalence of high-fidelity HPSMs in nursing education. An integrative review adapted a systematic approach. Medline, CINAHL plus, ERIC, PsychINFO, EMBASE, SCOPUS, Science Direct, Cochrane database, Joanna Brigge Institute, ProQuest, California Simulation Alliance, Simulation Innovative Recourses Center and the search engine Google Scholar were searched. Keywords were selected and specific inclusion/exclusion criteria were applied. The review included all research designs for papers published between 2000 and 2015 that identified the barriers and enablers to using high-fidelity HPSMs in undergraduate nursing education. Studies were appraised using the Critical Appraisal Skills Programme criteria. Thematic analysis was undertaken and emergent themes were extracted. Twenty-one studies were included in the review. These studies adopted quasi-experimental, prospective non-experimental and descriptive designs. Ten barriers were identified, including "lack of time," "fear of technology" and "workload issues." Seven enablers were identified, including "faculty training," "administrative support" and a "dedicated simulation coordinator." Barriers to simulation relate specifically to the complex technologies inherent in high-fidelity HPSMs approaches. Strategic approaches that support up-skilling and provide dedicated technological support may overcome these barriers. Copyright © 2015 Elsevier Ltd. All rights reserved.

  14. Microstructural characterization of thermal barrier coating on Inconel 617 after high temperature oxidation

    Directory of Open Access Journals (Sweden)

    Mohammadreza Daroonparvar

    2013-06-01

    Full Text Available A turbine blade was protected against high temperature corrosion and oxidation by thermal barrier coatings (TBCsusing atmospheric plasma spraying technique (APS on a Ni-based superalloy (Inconel 617. The coatings (NiCr6AlY/ YSZ and NiCr10AlY/YSZ consist of laminar structure with substantial interconnected porosity transferred oxygen from Yittria stabilized Zirconia (YSZ layer toward the bond coat (NiCrAlY. Hence, a thermally grown oxide layer (TGO was formed on the metallic bond coat and internal oxidation of the bond coat occurred during oxidation. The TBC systems were oxidized in a normal electrically heated furnace at 1150 °C for 18, 22, 26, 32 and 40h.Microstructural characterization of coatings demonstrated that the growth of the TGO layer on the nickel alloy with 6wt. % Al is more rapid than TGO with 10wt. % Al. In addition, many micro-cracks were observed at the interface of NiCr6AlY/YSZ. X-ray diffraction analysis (XRD showed the existence of detrimental oxides such as NiCr2O4, NiCrO3 and NiCrO4 in the bond coat containing 6wt. % Al, accompanied by rapid volume expansion causing the destruction of TBC. In contrast, in the bond coat with 10wt. % Al, NiO, Al2O3and Cr2O3 oxides were formed while very low volume expansion occurred. The oxygen could not penetrate into the TGO layer of bond coat with 10 wt. % Al during high temperature oxidation and the detrimental oxides were not extensively formed within the bond coat as more oxygen was needed. The YSZ with higher Al content showed higher oxidation resistance.

  15. Barrier effects of remote high mountain on atmospheric metal transport in the eastern Tibetan Plateau.

    Science.gov (United States)

    Bing, Haijian; Zhou, Jun; Wu, Yanhong; Luo, Xiaosan; Xiang, Zhongxiang; Sun, Hongyang; Wang, Jipeng; Zhu, He

    2018-07-01

    Anthropogenic metals adsorbed on suspended fine particles can be deposited on remote and inaccessible high mountains by long-range atmospheric transport. In this study, we investigated the cadmium (Cd) and lead (Pb) in the soils, mosses and rainfall of three transects on the Gongga Mountain, eastern Tibetan Plateau, to understand the mountain interception effects on their atmospheric transport. The concentrations of Cd and Pb in the soils and mosses displayed a pattern of eastern transect>northern transect>western transect. The distribution of Cd and Pb on the eastern transect increased from 2000 to 2900m a.s.l. (above sea level), decreased toward the timberline, and increased again with altitude; on the northern transect, it generally decreased with altitude whereas a distribution trend was not clearly observed on the western transect. The Cd and Pb concentrations in the rainfall of the eastern transect generally decreased with altitude, and they were higher inside forests than outside forests and temporally higher in the winter than the summer. The Pb isotopic ratios coupled with moss bio-monitoring distinguished anthropogenic sources of Cd and Pb on the eastern and northern transects, whereas bedrock weathering was the main source of Cd and Pb on the western transect. We proposed a conceptual model to delineate the effects of terrain, local climate and vegetation on the transport of atmospheric metals. Our results highlighted the high mountains in the eastern Tibetan Plateau as an effective natural barrier limiting atmospheric metal transport. Copyright © 2018 Elsevier B.V. All rights reserved.

  16. Origins of amorphous interstellar grains

    International Nuclear Information System (INIS)

    Hasegawa, H.

    1984-01-01

    The existence of amorphous interstellar grains has been suggested from infrared observations. Some carbon stars show the far infrared emission with a lambda -1 wavelength dependence. Far infrared emission supposed to be due to silicate grains often show the lambda -1 wavelength dependence. Mid infrared spectra around 10 μm have broad structure. These may be due to the amorphous silicate grains. The condition that the condensed grains from the cosmic gas are amorphous is discussed. (author)

  17. Diffusion of Lithium Ions in Amorphous and Crystalline Poly(ethylene oxide)_3:LiCF_3SO_3 Polymer Electrolytes

    International Nuclear Information System (INIS)

    Xue, Sha; Liu, Yingdi; Li, Yaping; Teeters, Dale; Crunkleton, Daniel W.; Wang, Sanwu

    2017-01-01

    The PEO_3:LiCF_3SO_3 polymer electrolyte has attracted significant research due to high conductivity and enhanced stability in lithium polymer batteries. Most experimental studies have shown that amorphous PEO lithium salt electrolytes have higher conductivity than the crystalline ones. Other studies, however, have shown that crystalline PEO salt complexes can conduct ions. As a result, further theoretical investigations are warranted to help clarify the issue. In this work, we use density functional theory with the climbing image nudged elastic band method to investigate the atomic-scale mechanism of lithium ion transport in the polymer electrolytes. We also use density functional theory and ab initio molecular dynamics simulations to obtain the amorphous structure of PEO_3:LiCF_3SO_3. The diffusion pathways and activation energies of lithium ions in both crystalline and amorphous PEO_3:LiCF_3SO_3 are determined. In crystalline PEO_3:LiCF_3SO_3, the activation energy for the low-barrier diffusion pathway is approximately 1.0 eV. In the amorphous phase, the value is 0.6 eV. This result would support the experimental observation that amorphous PEO_3:LiCF_3SO_3 has higher ionic conductivity than the crystalline phase.

  18. A Comparison of Perceptions of Barriers to Academic Success among High-Ability Students from High- and Low-Income Groups: Exposing Poverty of a Different Kind

    Science.gov (United States)

    Cross, Jennifer Riedl; Frazier, Andrea Dawn; Kim, Mihyeon; Cross, Tracy L.

    2018-01-01

    In 14 focus group interviews, sixth- to eighth-grade high-ability students from high- (n = 36) and low-income (n = 45) families were asked to describe the barriers they perceived to their academic success. Three themes were identified through the qualitative analysis: "Constraining Environments, Integration versus Isolation," and…

  19. Salt Fog Testing Iron-Based Amorphous Alloys

    International Nuclear Information System (INIS)

    Rebak, Raul B.; Aprigliano, Louis F.; Day, S. Daniel; Farmer, Joseph C.

    2007-01-01

    Iron-based amorphous alloys are hard and highly corrosion resistant, which make them desirable for salt water and other applications. These alloys can be produced as powder and can be deposited as coatings on any surface that needs to be protected from the environment. It was of interest to examine the behavior of these amorphous alloys in the standard salt-fog testing ASTM B 117. Three different amorphous coating compositions were deposited on 316L SS coupons and exposed for many cycles of the salt fog test. Other common engineering alloys such as 1018 carbon steel, 316L SS and Hastelloy C-22 were also tested together with the amorphous coatings. Results show that amorphous coatings are resistant to rusting in salt fog. Partial devitrification may be responsible for isolated rust spots in one of the coatings. (authors)

  20. Advanced thermal barrier coatings for operation in high hydrogen content fueled gas turbines.

    Energy Technology Data Exchange (ETDEWEB)

    Sampath, Sanjay [Stony Brook Univ., NY (United States)

    2015-04-02

    The Center for Thermal Spray Research (CTSR) at Stony Brook University in partnership with its industrial Consortium for Thermal Spray Technology is investigating science and technology related to advanced metallic alloy bond coats and ceramic thermal barrier coatings for applications in the hot section of gasified coal-based high hydrogen turbine power systems. In conjunction with our OEM partners (GE and Siemens) and through strategic partnership with Oak Ridge National Laboratory (ORNL) (materials degradation group and high temperature materials laboratory), a systems approach, considering all components of the TBC (multilayer ceramic top coat, metallic bond coat & superalloy substrate) is being taken during multi-layered coating design, process development and subsequent environmental testing. Recent advances in process science and advanced in situ thermal spray coating property measurement enabled within CTSR has been incorporated for full-field enhancement of coating and process reliability. The development of bond coat processing during this program explored various aspects of processing and microstructure and linked them to performance. The determination of the bond coat material was carried out during the initial stages of the program. Based on tests conducted both at Stony Brook University as well as those carried out at ORNL it was determined that the NiCoCrAlYHfSi (Amdry) bond coats had considerable benefits over NiCoCrAlY bond coats. Since the studies were also conducted at different cycling frequencies, thereby addressing an associated need for performance under different loading conditions, the Amdry bond coat was selected as the material of choice going forward in the program. With initial investigations focused on the fabrication of HVOF bond coats and the performance of TBC under furnace cycle tests , several processing strategies were developed. Two-layered HVOF bond coats were developed to render optimal balance of density and surface roughness

  1. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1992-10-01

    0.9 MeV electron irradiations were performed at 28--220 K in a high-voltage electron microscope (HVEM). By measuring onset, spread and final size of the amorphous region, factoring in the Guassian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼220 K, compared to 570--625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the does-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a region dose, the final size decreasing with increasing temperature, and it was argued that this is related to the existence of a critical dose rate, which increased with temperature, below which no amorphization occurred. The above observations can be understood in the framework of the kinetics of damage accumulation under irradiation

  2. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

  3. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

  4. Design and Characterization of High-strength Bond Coats for Improved Thermal Barrier Coating Durability

    Science.gov (United States)

    Jorgensen, David John

    High pressure turbine blades in gas turbine engines rely on thermal barrier coating (TBC) systems for protection from the harsh combustion environment. These coating systems consist of a ceramic topcoat for thermal protection, a thermally grown oxide (TGO) for oxidation passivation, and an intermetallic bond coat to provide compatibility between the substrate and ceramic over-layers while supplying aluminum to sustain Al2O 3 scale growth. As turbine engines are pushed to higher operating temperatures in pursuit of better thermal efficiency, the strength of industry-standard bond coats limits the lifetime of these coating systems. Bond coat creep deformation during thermal cycling leads to a failure mechanism termed rumpling. The interlayer thermal expansion differences, combined with TGO-imposed growth stresses, lead to the development of periodic undulations in the bond coat. The ceramic topcoat has low out-of-plane compliance and thus detaches and spalls from the substrate, resulting in a loss of thermal protection and subsequent degradation of mechanical properties. New creep resistant Ni3Al bond coats were designed with improved high-temperature strength to inhibit this type of premature failure at elevated temperatures. These coatings resist rumpling deformation while maintaining compatibility with the other layers in the system. Characterization methods are developed to quantify rumpling and assess the TGO-bond coat interface toughness of experimental systems. Cyclic oxidation experiments at 1163 °C show that the Ni3Al bond coats do not experience rumpling but have faster oxide growth rates and are quicker to spall TGO than the (Pt,Ni)Al benchmark. However, the Ni 3Al coatings outperformed the benchmark by over threefold in TBC system life due to a higher resistance to rumpling (mechanical degradation) while maintaining adequate oxidation passivation. The Ni3Al coatings eventually grow spinel NiAl2O4 on top of the protective Al2O3 layer, which leads to the

  5. Determinants of High Blood Pressure and Barriers to Diagnosis and Treatment in Dar es Salaam, Tanzania

    Science.gov (United States)

    ZACK, Rachel M.; IREMA, Kahema; KAZONDA, Patrick; LEYNA, Germana H.; LIU, Enju; SPIEGELMAN, Donna; FAWZI, Wafaie; NJELEKELA, Marina; KILLEWO, Japhet; DANAEI, Goodarz

    2017-01-01

    Objectives We assessed prevalence and determinants of high blood pressure, and barriers to diagnosis and treatment, in Dar es Salaam, Tanzania. Methods We surveyed and screened 2,174 community-dwelling adults aged ≥40 years in 2014 and conducted a follow-up after one year. Results Median blood pressure was 131/81 mmHg and hypertension prevalence was 37%. Mean adjusted difference in SBP was 4.0 mmHg for overweight, 6.3 mmHg for obese class I, and 10.5 mmHg for obese class II/III compared with normal weight participants. Those who were physically inactive had 4.8 mmHg higher SBP compared to those with more than 24 hours of moderate or vigorous activity per week. Drinkers of at least 10 grams of alcohol per day had 4.5 mmHg higher SBP than did non-drinkers. Among hypertensives, 48% were diagnosed, 22% were treated, and 10% were controlled. Hypertensives without health insurance were 12% less likely to be diagnosed than insured hypertensives. Of referred participants, 68% sought care, but only 27% were on treatment and 8% had controlled blood pressure at follow-up. Reasons for not seeking care included lack of symptoms, cost of visit, and lack of time. Reasons for not being on treatment included lack of symptoms, not being prescribed treatment, and having finished one course of treatment. Conclusions Major risk factors for hypertension in Dar es Salaam are overweight, obesity, inadequate physical activity, and limited access to quality medical care. Increased insurance coverage and community-based screening, along with quality medical care and patient education, may help control this burgeoning epidemic. PMID:27648720

  6. Corrosion of high purity copper as engineering barrier in deep geological repositories

    International Nuclear Information System (INIS)

    Ochoa, Maité; Rodríguez Martín, A.; Farina Silvia, B.

    2013-01-01

    Pure copper with oxygen content below 5 ppm (to minimize segregation at grain boundaries) and doped with phosphorus (to increase creep resistance) is the chosen material for the corrosion-resistant barrier of the High Level Radioactive 2 Wastecontainers in the Swedish and Finnish repository models. These models include the construction of the repository below the water table, which is a reducing environment in which copper has excellent resistance to general and localized corrosion in aqueous electrolytes. The aim of this work is contribute to determine the durability of the material, given that deep geological repositories of HLW are designed to ensure the protection of the environment for periods of hundreds of thousands years. As a first step in a more general analysis the effects of chloride, one of the main aggressive species of corrosion, are evaluated. To this purpose corrosion potential was determined and anodic polarization curves were performed in deaerated solutions varying the chloride concentration between 0.01 and 1M and the temperature between 30 and 90°C. Several electrochemical techniques were used: the evolution of corrosion potential was measured, anodic polarization curves were obtained and electrochemical impedance tests were performed. The analysis was complemented with microscopic observations of the type of corrosive attack, as well as determinations of the eventual corrosion products formed using Energy-Dispersive X-ray Analysis (EDS). Results show that the corrosion potential decreases with the increase of temperature and with the increase of chloride concentration. A correlation of the corrosion potential as a function of temperature and chloride concentration was obtained, with the purpose of making predictions in variable conditions.The current density increases both with temperature and with chloride concentration. A pitting potential is observed in certain conditions. (author)

  7. Oxygen Barrier Properties and Melt Crystallization Behavior of Poly(ethylene terephthalate)/Graphene Oxide Nanocomposites

    OpenAIRE

    Szymczyk, Anna; Paszkiewicz, Sandra; Pawelec, Iwona; Lisiecki, Slawomir; Jotko, Marek; Spitalsky, Zdenko; Mosnácek, Jaroslav; Roslaniec, Zbigniew

    2015-01-01

    Poly(ethylene terephthalate) nanocomposites with low loading (0.1–0.5 wt%) of graphene oxide (GO) have been prepared by using in situ polymerization method. TEM study of nanocomposites morphology has shown uniform distribution of highly exfoliated graphene oxide nanoplatelets in PET matrix. Investigations of oxygen permeability of amorphous films of nanocomposites showed that the nanocomposites had better oxygen barrier properties than the neat PET. The improvement of oxygen permeability for ...

  8. Transformation processes during annealing of Al-amorphous alloys

    International Nuclear Information System (INIS)

    Petrescu, N.; Petrescu, M.; Calin, M.; Jianu, A.D.; Fecioru, M.

    1993-01-01

    As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.)

  9. Transformation processes during annealing of Al-amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Petrescu, N. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Petrescu, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Calin, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Jianu, A.D. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) IFTM-Bucharest (Romania)); Fecioru, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) DACIA Enterprise-Bucharest (Romania))

    1993-11-01

    As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.).

  10. Low Thermal Conductivity, High Durability Thermal Barrier Coatings for IGCC Environments

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Eric [Univ. of Connecticut, Storrs, CT (United States); Gell, Maurice [Univ. of Connecticut, Storrs, CT (United States)

    2015-01-15

    Advanced thermal barrier coatings (TBC) are crucial to improved energy efficiency in next generation gas turbine engines. The use of traditional topcoat materials, e.g. yttria-stabilized zirconia (YSZ), is limited at elevated temperatures due to (1) the accelerated undesirable phase transformations and (2) corrosive attacks by calcium-magnesium-aluminum-silicate (CMAS) deposits and moisture. The first goal of this project is to use the Solution Precursor Plasma Spray (SPPS) process to further reduce the thermal conductivity of YSZ TBCs by introducing a unique microstructural feature of layered porosity, called inter-pass boundaries (IPBs). Extensive process optimization accompanied with hundreds of spray trials as well as associated SEM cross-section and laser-flash measurements, yielded a thermal conductivity as low as 0.62 Wm⁻¹K⁻¹ in SPPS YSZ TBCs, approximately 50% reduction of APS TBCs; while other engine critical properties, such as cyclic durability, erosion resistance and sintering resistance, were characterized to be equivalent or better than APS baselines. In addition, modifications were introduced to SPPS TBCs so as to enhance their resistance to CMAS under harsh IGCC environments. Several mitigation approaches were explored, including doping the coatings with Al₂O₃ and TiO₂, applying a CMAS infiltration-inhibiting surface layer, and filling topcoat cracks with blocking substances. The efficacy of all these modifications was assessed with a set of novel CMAS-TBC interaction tests, and the moisture resistance was tested in a custom-built high-temperature moisture rig. In the end, the optimal low thermal conductivity TBC system was selected based on all evaluation tests and its processing conditions were documented. The optimal coating consisted on a thick inner layer of YSZ coating made by the SPPS process having a thermal conductivity 50% lower than standard YSZ coatings topped with a high temperature tolerant CMAS resistant gadolinium

  11. Crystallization of an amorphous B-C-N precursor with a Li-B-N catalyst at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Li Dongxu; Yu Dongli; Wang Peng; Li Yingmei; He Julong; Xu Bo; Liu Zhongyuan [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei Province (China); Tian Yongjun, E-mail: fhcl@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei Province (China)

    2009-11-15

    An orthorhombic B-C-N compound was synthesized using an amorphous B-C-N precursor and a Li-B-N catalyst at 6 GPa and 1773 K. The results of energy dispersive spectrometry and electronic energy loss spectrometry suggest a stoichiometry of B:C:N = 1:3.3:1. In addition, the Li-B-N catalyst improves the crystallizations of the B-C-N compound, graphite and BN and therefore might be a profitable catalyst in ultrahigh pressure experiments.

  12. Crystallization of an amorphous B-C-N precursor with a Li-B-N catalyst at high pressures and temperatures

    International Nuclear Information System (INIS)

    Li Dongxu; Yu Dongli; Wang Peng; Li Yingmei; He Julong; Xu Bo; Liu Zhongyuan; Tian Yongjun

    2009-01-01

    An orthorhombic B-C-N compound was synthesized using an amorphous B-C-N precursor and a Li-B-N catalyst at 6 GPa and 1773 K. The results of energy dispersive spectrometry and electronic energy loss spectrometry suggest a stoichiometry of B:C:N = 1:3.3:1. In addition, the Li-B-N catalyst improves the crystallizations of the B-C-N compound, graphite and BN and therefore might be a profitable catalyst in ultrahigh pressure experiments.

  13. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    OpenAIRE

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-01-01

    In this paper, a simple and controllable ?wet pulse annealing? technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150??C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1?s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics rev...

  14. Characterization of amorphous and nanocrystalline carbon films

    International Nuclear Information System (INIS)

    Chu, Paul K.; Li Liuhe

    2006-01-01

    Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

  15. Study on characteristics of high frequency dielectric barrier discharge for the removal of organic pollutant adsorbed on activated carbon

    Energy Technology Data Exchange (ETDEWEB)

    Qu, G.Z.; Li, G.F. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Li, J.; Lu, N.; Wu, Y.; Li, D. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Key Lab of Industrial Ecology and Environmental Engineering, Ministry of Education, Dalian (China)

    2010-07-01

    Advanced oxidation technologies such as photocatalysis, electrochemical degradation, Fenton oxidation, hydrogen peroxide oxidation, and plasma oxidation are increasingly being used to degrade refractory biodegradable organic contaminants. The plasma oxidation method has the advantage of direct in situ production of multiple types of high-reactive chemical species, including molecules and radicals that facilitate the degradation reaction. In addition, plasma oxidation does not produce any secondary pollution. Compared to other plasma technologies, the dielectric barrier discharge (DBD) plasma has been considered as a promising technology for removing toxic compounds because of its stability and its treatability property of biologically recalcitrant compounds in wastewater. However, the energy efficiency of DBD requires improvement for economic reasons. This paper reported on an experimental study that investigated the electrical characteristics of a parallel plate DBD reactor using a high frequency power supply for the removal of pentachlorophenol (PCP) adsorbed on activated carbon (AC). This study examined the effects of AC with different mass on discharge characteristics and compared the voltage and current waveforms, and discharge images of DBD reactors with different dielectric configurations. When the DBD reactor filled with AC, the applied voltage of discharge decreased regardless of the DBD reactor configuration in terms of having a single barrier or two barriers. The discharge characteristics had no significant change with AC mass increasing. The discharge images and current waveforms showed that DBD reactor configuration consisting of two dielectrics is more homogeneous and stable than the one consisting of a single dielectric. Under the same electric field condition, the degradation efficiency of PCP in two barriers reactor is higher than that in single barrier reactor. It was concluded that the findings from this study may be instrumental in treating

  16. Crystallization of biogenic hydrous amorphous silica

    Science.gov (United States)

    Kyono, A.; Yokooji, M.; Chiba, T.; Tamura, T.; Tuji, A.

    2017-12-01

    Diatom, Nitzschia cf. frustulum, collected from Lake Yogo, Siga prefecture, Japan was cultured in laboratory. Organic components of the diatom cell were removed by washing with acetone and sodium hypochlorite. The remaining frustules were studied by SEM-EDX, FTIR spectroscopy, and synchrotron X-ray diffraction. The results showed that the spindle-shaped morphology of diatom frustule was composed of hydrous amorphous silica. Pressure induced phase transformation of the diatom frustule was investigated by in situ Raman spectroscopic analysis. With exposure to 0.3 GPa at 100 oC, Raman band corresponding to quartz occurred at ν = 465 cm-1. In addition, Raman bands known as a characteristic Raman pattern of moganite was also observed at 501 cm-1. From the integral ratio of Raman bands, the moganite content in the probed area was estimated to be approximately 50 wt%. With the pressure and temperature effect, the initial morphology of diatom frustule was completely lost and totally changed to a characteristic spherical particle with a diameter of about 2 mm. With keeping the compression of 5.7 GPa at 100 oC, a Raman band assignable to coesite appeared at 538 cm-1. That is, with the compression and heating, the hydrous amorphous silica can be readily crystallized into quartz, moganite, and coesite. The first-principles calculations revealed that a disiloxane molecule stabilized in a trans configuration is twisted 60o and changed into the cis configuration with a close approach of water molecule. It is therefore a reasonable assumption that during crystallization of hydrous amorphous silica, the Si-O-Si bridging unit with the cis configuration would survive as a structural defect and then crystallized into moganite by keeping the geometry. This hypothesis is adaptable to the phase transformation from hydrous amorphous silica to coesite as well, because coesite has the four-membered rings and easily formed from the hydrous amorphous silica under high pressure and high

  17. Identification of multi-drug resistant Pseudomonas aeruginosa clinical isolates that are highly disruptive to the intestinal epithelial barrier

    Directory of Open Access Journals (Sweden)

    Shevchenko Olga

    2006-06-01

    Full Text Available Abstract Background Multi-drug resistant Pseudomonas aeruginosa nosocomial infections are increasingly recognized worldwide. In this study, we focused on the virulence of multi-drug resistant clinical strains P. aeruginosa against the intestinal epithelial barrier, since P. aeruginosa can cause lethal sepsis from within the intestinal tract of critically ill and immuno-compromised patients via mechanisms involving disruption of epithelial barrier function. Methods We screened consecutively isolated multi-drug resistant P. aeruginosa clinical strains for their ability to disrupt the integrity of human cultured intestinal epithelial cells (Caco-2 and correlated these finding to related virulence phenotypes such as adhesiveness, motility, biofilm formation, and cytotoxicity. Results Results demonstrated that the majority of the multi-drug resistant P. aeruginosa clinical strains were attenuated in their ability to disrupt the barrier function of cultured intestinal epithelial cells. Three distinct genotypes were found that displayed an extreme epithelial barrier-disrupting phenotype. These strains were characterized and found to harbor the exoU gene and to display high swimming motility and adhesiveness. Conclusion These data suggest that detailed phenotypic analysis of the behavior of multi-drug resistant P. aeruginosa against the intestinal epithelium has the potential to identify strains most likely to place patients at risk for lethal gut-derived sepsis. Surveillance of colonizing strains of P. aeruginosa in critically ill patients beyond antibiotic sensitivity is warranted.

  18. Determination of properties of high temperature superconductors and amorphous metallic alloys using positron annihilation techniques. Final report for the period 15 January 1992 - 15 July 1995

    International Nuclear Information System (INIS)

    Kristiak, J.

    1995-11-01

    The positron lifetime results obtained on amorphous thermally treated Ni 25 Zr 55 Al 20 alloy indicate that positrons annihilate at places with different properties. The observed shifts of positron lifetime distribution were analyzed in the terms of a relaxation of free-volume, i.e. chemical (CSRO) and topological (TSRO) short range ordering. The upper limit of the activation energy of CSRO and TSRO relaxation was determined to be 2.2eV and 2.6eV, respectively. Positron lifetime τ and Doppler broadening of the annihilation line measurements on very pure C 60 sample as a function of temperature between 120 and 300 K have been reported. A rapid change of τ was observed between 240 and 250 K. This results indicate that the lattice from C 60 molecules is undergoing a phase transition and the phases coexist over an ∼ 10K range. The annihilation of positrons in amorphous tetramethylpoly-carbonate has been investigated in the temperature range from 30 to 300 K. The observed dependences of the mean lifetime of oPs and its relative intensity 1 on temperature were interpreted within the framework of the microstructural free-volume concept. The man radius of free space (hole) was deduced to be around 3,1.10 -10 m. Refs, figs, tabs

  19. Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

    Science.gov (United States)

    Purwins, H.-G.; Stollenwerk, L.

    2014-12-01

    The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

  20. Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

    International Nuclear Information System (INIS)

    Purwins, H-G; Stollenwerk, L

    2014-01-01

    The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

  1. On the nature of amorphous polymorphism of water

    OpenAIRE

    Koza, Michael Marek; Geil, Burkhard; Winkel, Katrin; Koehler, Christian; Czeschka, Franz; Scheuermann, Marco; Schober, Helmut; Hansen, Thomas

    2005-01-01

    We report elastic and inelastic neutron scattering experiments on different amorphous ice modifications. It is shown that an amorphous structure (HDA') indiscernible from the high-density phase (HDA), obtained by compression of crystalline ice, can be formed from the very high-density phase (vHDA) as an intermediate stage of the transition of vHDA into its low-density modification (LDA'). Both, HDA and HDA' exhibit comparable small angle scattering signals characterizing them as structures he...

  2. Barriers impeding serologic screening for celiac disease in clinically high-prevalence populations

    Science.gov (United States)

    2014-01-01

    Background Celiac disease is present in ~1% of the general population in the United States and Europe. Despite the availability of inexpensive serologic screening tests, ~85% of individuals with celiac disease remain undiagnosed and there is an average delay in diagnosis of symptomatic individuals with celiac disease that ranges from ~5.8-11 years. This delay is often attributed to the use of a case-based approach for detection rather than general population screening for celiac disease, and deficiencies at the level of health care professionals. This study aimed to assess if patient-centered barriers have a role in impeding serologic screening for celiac disease in individuals from populations that are clinically at an increased risk for celiac disease. Methods 119 adults meeting study inclusion criteria for being at a higher risk for celiac disease were recruited from the general population. Participants completed a survey/questionnaire at the William K. Warren Medical Research Center for Celiac Disease that addressed demographic information, celiac disease related symptoms (gastrointestinal and extraintestinal), family history, co-morbid diseases and conditions associated with celiac disease, and patient-centered barriers to screening for celiac disease. All participants underwent serologic screening for celiac disease using the IgA tissue transglutaminase antibody (IgA tTG) and, if positive, testing for IgA anti-endomysial antibody (IgA EMA) as a confirmatory test. Results Two barriers to serologic testing were significant across the participant pool. These were participants not knowing they were at risk for celiac disease before learning of the study, and participants not knowing where to get tested for celiac disease. Among participants with incomes less than $25,000/year and those less than the median age, not having a doctor to order the test was a significant barrier, and this strongly correlated with not having health insurance. Symptoms and co

  3. Barriers to adherence to highly active antiretroviral therapy as expressed by people living with HIV/AIDS.

    Science.gov (United States)

    Proctor, V E; Tesfa, A; Tompkins, D C

    1999-09-01

    The primary objective of this study was to gain a clearer understanding of the barriers to adherence to highly active antiretroviral therapy (HAART) faced by people living with HIV/AIDS (PLWHIV/AIDS) on Long Island, New York. Focus group, a qualitative research method, was used to study these barriers. The study was conducted in 1998 on Long Island, NY, at five institutions that provide services to 1700 PLWHIV/AIDS. Five focus groups were conducted with 6 to 13 PLWHIV/AIDS in each group, a total of 39 subjects. PLWHIV/AIDS identified eight common barriers to adherence to HAART. In descending order, the barriers include: (1) frequency and severity of side effects, (2) conflicts with daily routines, (3) dietary requirements, (4) frequency of taking medications, (5) number and dosage of medications, (6) psychosocial factors (i.e., stress, feeling good, and bad news), (7) pharmacy refills, and (8) physiological needs (i.e., sleep, hunger, or thirst). Many factors play a role in the success or failure of HAART, including preexisting drug resistance, drug-drug interactions, and the ability of PLWHIV/AIDS to adhere to a rigid and frequently changing medication regimen. The information gleaned from focus groups is limited in that it may not be generalized to a larger population with any known reliability. However, clinicians sensitive to barriers to adherence to HAART, including those identified by PLWHIV/AIDS in this study, may play a more proactive role in supporting adherence to the medication regimen, increasing the durability of effective viral suppression, decreasing morbidity and mortality, and decreasing the selection and transmission of resistant strains of HIV.

  4. Wear Resistant Amorphous and Nanocomposite Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Racek, O

    2008-03-26

    Glass forming materials (critical cooling rate <10{sup 4}K.s{sup -1}) are promising for their high corrosion and wear resistance. During rapid cooling, the materials form an amorphous structure that transforms to nanocrystalline during a process of devitrification. High hardness (HV 1690) can be achieved through a controlled crystallization. Thermal spray process has been used to apply coatings, which preserves the amorphous/nanocomposite structure due to a high cooling rate of the feedstock particles during the impact on a substrate. Wear properties have been studied with respect to process conditions and feedstock material properties. Application specific properties such as sliding wear resistance have been correlated with laboratory tests based on instrumented indentation and scratch tests.

  5. Corrosion behavior of amorphous and crystalline Cu50Ti50 and Cu50Zr50 alloys

    International Nuclear Information System (INIS)

    Naka, M.; Hoshimoto, K.; Masumoto, T.

    1978-01-01

    Corrosion rates and anodic polarization curves of amorphous and crystalline Cu 50 Ti 50 and Cu 50 Zr 50 alloys have been examined in various acidic, neutral and alkaline solutions. The amorphous alloys are very stable in acidic and alkaline solutions, but unstable in agressive chloride solutions. The corrosion resistance of these amorphous alloys is higher than that of the crystallized alloys. The high corrosion resistance of amorphous alloys is attributable to the high chemical homogeneity of amorphous alloys without localized crystalline defects such as precipitates, segregates, grain boundaries, etc. Metalloid elements play an important role in the corrosion behavior of amorphous alloys; the addition of phosphorus to amorphous Cu-Ti alloy greatly increases the corrosion resistance, even in 1N HCl. (Auth.)

  6. Laser spot welding of cobalt-based amorphous metal foils

    International Nuclear Information System (INIS)

    Runchev, Dobre; Dorn, Lutc; Jaferi, Seifolah; Purbst, Detler

    1997-01-01

    The results concerning weldability of amorphous alloy (VAC 6025F) in shape of foils and the quality of laser-spot welded joints are presented in this paper. The aim of the research was the production of a high quality welding joint, by preserving the amorphous structure. The quality of the joint was tested by shear strength analysis and microhardness measuring. The metallographic studies were made by using optical microscope and SEM. The results show that (1) overlapped Co based amorphous metals foils can be welded with high-quality by a pulsed Nd: YAG-Laser, but only within a very narrow laser parameter window; (2) the laser welded spots show comparably high strength as the basic material; (3) the structure of the welded spot remains amorphous, so that the same characteristics as the base material can be achieved. (author)

  7. Emerging trends in the stabilization of amorphous drugs

    DEFF Research Database (Denmark)

    Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J.

    2013-01-01

    The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly...... water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative...... of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals....

  8. The nature of the photoluminescence in amorphized PZT

    International Nuclear Information System (INIS)

    Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

    2005-01-01

    The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

  9. Amorphization of C-implanted Fe(Cr) alloys

    International Nuclear Information System (INIS)

    Knapp, J.A.; Follstaedt, D.M.; Sorensen, N.R.; Pope, L.E.

    1991-01-01

    The amorphous phase formed by implanting C into Fe alloyed with Cr, which is a prototype for the amorphous phase formed by implanting C into stainless steels, is compared to that formed by implanting C and Ti into Fe and steels. The composition range of the phase has been examined; higher Cr and C concentrations are required than needed with Ti and C. The friction and wear benefits obtained by implanting stainless steels with C only do not persist for the long durations and high wear loads found with Ti and C. However, the amorphous Fe-Cr-C alloys exhibit good aqueous corrosion resistance. (orig.)

  10. A high performance ceria based interdiffusion barrier layer prepared by spin-coating

    DEFF Research Database (Denmark)

    Plonczak, Pawel; Joost, Mario; Hjelm, Johan

    2011-01-01

    A multiple spin-coating deposition procedure of Ce0.9Gd0.1O1.95 (CGO) for application in solid oxide fuel cells (SOFCs) was developed. The thin and dense CGO layer can be employed as a barrier layer between yttria stabilised zirconia (YSZ) electrolyte and a (La, Sr)(Co, Fe)O3 based cathode....... The decomposition of the polymer precursor used in the spin-coating process was studied. The depositions were performed on anode supported half cells. By controlling the sintering temperature between each spin-coating process, dense and crack-free CGO films with a thickness of approximately 1 μm were obtained....... The successive steps of dense layer production was investigated by scanning electron microscopy. X-ray diffraction was employed to monitor the crystal structure of the CGO layer sintered at different temperatures. The described spin coated barrier layer was evaluated using an anode supported cell...

  11. A Model of High-Frequency Self-Mixing in Double-Barrier Rectifier

    Science.gov (United States)

    Palma, Fabrizio; Rao, R.

    2018-03-01

    In this paper, a new model of the frequency dependence of the double-barrier THz rectifier is presented. The new structure is of interest because it can be realized by CMOS image sensor technology. Its application in a complex field such as that of THz receivers requires the availability of an analytical model, which is reliable and able to highlight the dependence on the parameters of the physical structure. The model is based on the hydrodynamic semiconductor equations, solved in the small signal approximation. The model depicts the mechanisms of the THz modulation of the charge in the depleted regions of the double-barrier device and explains the self-mixing process, the frequency dependence, and the detection capability of the structure. The model thus substantially improves the analytical models of the THz rectification available in literature, mainly based on lamped equivalent circuits.

  12. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

    Science.gov (United States)

    Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

    2017-03-01

    We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

  13. Simulation of crash tests for high impact levels of a new bridge safety barrier

    Science.gov (United States)

    Drozda, Jiří; Rotter, Tomáš

    2017-09-01

    The purpose is to show the opportunity of a non-linear dynamic impact simulation and to explain the possibility of using finite element method (FEM) for developing new designs of safety barriers. The main challenge is to determine the means to create and validate the finite element (FE) model. The results of accurate impact simulations can help to reduce necessary costs for developing of a new safety barrier. The introductory part deals with the creation of the FE model, which includes the newly-designed safety barrier and focuses on the application of an experimental modal analysis (EMA). The FE model has been created in ANSYS Workbench and is formed from shell and solid elements. The experimental modal analysis, which was performed on a real pattern, was employed for measuring the modal frequencies and shapes. After performing the EMA, the FE mesh was calibrated after comparing the measured modal frequencies with the calculated ones. The last part describes the process of the numerical non-linear dynamic impact simulation in LS-DYNA. This simulation was validated after comparing the measured ASI index with the calculated ones. The aim of the study is to improve professional public knowledge about dynamic non-linear impact simulations. This should ideally lead to safer, more accurate and profitable designs.

  14. Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Yang-Shun [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Hsu, Ching-Hui [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China)

    2013-12-31

    Recently, non-volatile memory (NVM) has been widely used in electronic devices. Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the conventional Flash memory will approach its scaling limit within about a decade. The resistive random access memory (RRAM) is emerging as one of the potential candidates for future memory replacement because of its high storage density, low power consumption as well as simple structure. The purpose of this work is to develop a reliable a-InGaZnO based resistive switching memory. We investigate the resistive switching characteristics of TiN/Ti/IGZO/Pt structure and TiN/IGZO/Pt structure. The device with TiN/Ti/IGZO/Pt structure exhibits stable bipolar resistive switching. The impact of inserting a Ti interlayer is studied by material analyses. The device shows excellent resistive switching properties. For example, the DC sweep endurance can achieve over 1000 times; and the pulse induced switching cycles can reach at least 10,000 times. Furthermore, the impact of different sputtering ambience, the variable temperature measurement, and the conduction mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices.

  15. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  16. As-grown vertically aligned amorphous TiO2 nanotube arrays as high-rate Li-based micro-battery anodes with improved long-term performance

    International Nuclear Information System (INIS)

    Lamberti, Andrea; Garino, Nadia; Sacco, Adriano; Bianco, Stefano; Chiodoni, Angelica; Gerbaldi, Claudio

    2015-01-01

    Highlights: • Amorphous TiO 2 nanotube (NT) arrays are fabricated by fast and facile anodic oxidation. • Near-theoretical initial specific capacity and remarkable rate capability. • Very long-term cycling stability (>2000 cycles) at a very high C-rate. • High surface area and improved interfacial characteristics for fast diffusion kinetics. • NTs show promising prospects in storage devices conceived for high power applications. - Abstract: Vertically oriented arrays of high surface area TiO 2 nanotubes (NTs) are fabricated by the fast and facile anodic oxidation of a titanium foil. The formation of well-defined one-dimensional nanotubular carpets is assessed by means of morphological Field Emission Scanning Electron Microscopy characterisation, while X-ray diffraction analysis and Transmission Electron Microscopy imaging confirm the amorphous nature of the samples. The electrochemical response evaluated in lab-scale lithium cells is highly satisfying with near-theoretical initial specific capacity and remarkable rate capability, noteworthy in the absence of binders and conductive agents, which would affect the overall energy density. A specific capacity exceeding 200 mAh g −1 is observed at very high 24 C and approx. 80 mAh g −1 are retained even at very high 96 C rate, thus accounting for the promising prospects in storage devices conceived for high power applications. Moreover, the NTs can perform with good cycling stability and capacity retention approaching 50% of the initial value after very long-term operation along with improved durability (> 2000 cycles)

  17. Crystallization inhibitors for amorphous oxides

    International Nuclear Information System (INIS)

    Reznitskij, L.A.; Filippova, S.E.

    1993-01-01

    Data for the last 10 years, in which experimental results of studying the temperature stabilization of x-ray amorphous oxides (including R 3 Fe 5 O 12 R-rare earths, ZrO 2 , In 2 O 3 , Sc 2 O 3 ) and their solid solution are presented, are generalized. Processes of amorphous oxide crystallization with the production of simple oxides, solid solutions and chemical compounds with different polyhedral structure, are investigated. Energy and crystallochemical criteria for selecting the doping inhibitor-components stabilizing the amorphous state are ascertained, temperatures and enthalpies of amorpous oxide crystallization are determined, examination of certain provisions of iso,orphous miscibility theory is conducted

  18. AN ANALYSIS OF THE THERMAL AND MECHANICAL BEHAVIOR OF ENGINEERED BARRIERS IN A HIGH-LEVEL RADIOACTIVE WASTE REPOSITORY

    Directory of Open Access Journals (Sweden)

    S. KWON

    2013-02-01

    Full Text Available Adequate design of engineered barriers, including canister, buffer and backfill, is important for the safe disposal of high-level radioactive waste. Three-dimensional computer simulations were carried out under different condition to examine the thermal and mechanical behavior of engineered barriers and rock mass. The research looked at five areas of importance, the effect of the swelling pressure, water content of buffer, density of compacted bentonite, emplacement type and the selection of failure criteria. The results highlighted the need to consider tensile stress in the outer shell of a canister due to thermal expansion of the canister and the swelling pressure from the buffer for a more reliable design of an underground repository system. In addition, an adequate failure criterion should be used for the buffer and backfill.

  19. Fish movement ecology in high gradient headwater streams: Its relevance to fish passage restoration through stream culvert barriers

    Science.gov (United States)

    Hoffman, Robert L.; Dunham, Jason B.

    2007-01-01

    Restoration of fish passage through culvert barriers has emerged as a major issue in the Pacific Northwest and nationwide, in part, because of their potential influence on fish movement. Movement is an essential mechanism by which mobile animals acquire the resources necessary for the successful completion of their life-cycles. In this report, we provide a brief review of some essential characteristics of animal movement and examples from a focal group of fishes in Washington State: salmon, trout, and char. We begin by outlining some basic characteristics of animal movement and then apply that foundation to the case of salmonid fishes. Next we consider the consequences of disrupting fish movement with human-constructed barriers, such as culverts. Finally, this body of evidence is summarized, and we propose a short list of what we view as high priority information needs to support more effective restoration of fish passage through culverts.

  20. An analysis of the thermal and mechanical behavior of engineered barriers in a high-level radioactive waste repository

    International Nuclear Information System (INIS)

    Kwon, S.; Cho, W. J.; Lee, J. O.

    2013-01-01

    Adequate design of engineered barriers, including canister, buffer and backfill, is important for the safe disposal of high level radioactive waste. Three-dimensional computer simulations were carried out under different condition to examine the thermal and mechanical behavior of engineered barriers and rock mass. The research looked at five areas of importance, the effect of the swelling pressure, water content of buffer, density of compacted bentonite, emplacement type and the selection of failure criteria. The results highlighted the need to consider tensile stress in the outer shell of a canister due to thermal expansion of the canister and the swelling pressure from the buffer for a more reliable design of an underground repository system. In addition, an adequate failure criterion should be used for the buffer and backfill.

  1. Nature of amorphous polymorphism of water

    International Nuclear Information System (INIS)

    Koza, M.M.; Schober, H.; Hansen, T.; Geil, B.; Winkel, K.; Koehler, C.; Scheuermann, M.; Czeschka, F.

    2005-01-01

    We report elastic and inelastic neutron scattering experiments on different amorphous ice modifications. It is shown that an amorphous structure (HDA ' ) indiscernible from the high-density phase (HDA), obtained by compression of crystalline ice, can be formed from the very high-density phase (vHDA) as an intermediate stage of the transition of vHDA into its low-density modification (LDA ' ). Both HDA and HDA ' exhibit comparable small-angle scattering signals characterizing them as structures heterogeneous on a length scale of a few nanometers. The homogeneous structures are the initial and final transition stages vHDA and LDA ' , respectively. Despite their apparent structural identity on a local scale, HDA and HDA ' differ in their transition kinetics explored by in situ experiments. The activation energy of the vHDA-to-LDA ' transition is at least 20 kJ/mol higher than the activation energy of the HDA-to-LDA transition

  2. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture high-quality amorphous materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    These technological developments are intended to develop technologies to manufacture with improved quality the silicon-based thin film solar cells. In order to analyze manufacturing conditions for micro crystal silicon thin films as the narrow-gap amorphous silicon-based films, films were manufactured in the vicinity of borders of amorphous/micro crystal silicon film manufacturing conditions. The present film manufacturing did not present effects of suppressing deterioration of hydrogen diluted light. In order to elucidate the light deterioration mechanism in hydrogenated amorphous silicon films and study the suppression thereof, discussions were given on impurities in the film, including oxygen. By using an ultra high vacuum plasma CVD having a thoroughgoing baking system, an oil-free exhaust mechanism, and a raw material gas refining mechanism, impurities were added to and removed from a reaction vessel, and an ultra-high purity Si:H film was manufactured, which has been removed of impurities from the raw material gas, resulting in reduction of O, C and N standing no comparison. According to the result of a light irradiation experiment on an ultra-high purity film obtained under an accelerated deteriorating condition by using a pulse laser, the model assuming the light induced defect and the pair of impure atoms has been denied. (NEDO)

  3. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  4. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

    Science.gov (United States)

    Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

    2017-07-01

    In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

  5. Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

    International Nuclear Information System (INIS)

    Lopes, J.M.J.; Littmark, U.; Roeckerath, M.; Durgun Oezben, E.; Lenk, S.; Schubert, J.; Mantl, S.; Breuer, U.; Besmehn, A.; Staerk, A.; Grande, P.L.; Sortica, M.A.; Radtke, C.

    2009-01-01

    The influence of post-deposition oxygen anneals on the properties of amorphous LaScO 3 films on Si(100) is reported. The use of an isotopically ( 18 O 2 ) enriched atmosphere allowed to investigate the 16 O- 18 O exchange and the oxygen diffusion across the dielectric layer. Such effects are connected to the formation of an interfacial layer. Oxygen annealing leads to nearly ideal capacitance-voltage curves, lower leakage currents and interface trap densities, as well as to κ-values up to 33 for the LaScO 3 films. These results are attributed to the suppression of oxygen-related trap centers and the achievement of a stoichiometric oxygen content. (orig.)

  6. Sialic acid (SA)-modified selenium nanoparticles coated with a high blood-brain barrier permeability peptide-B6 peptide for potential use in Alzheimer's disease.

    Science.gov (United States)

    Yin, Tiantian; Yang, Licong; Liu, Yanan; Zhou, Xianbo; Sun, Jing; Liu, Jie

    2015-10-01

    The blood-brain barrier (BBB) is a formidable gatekeeper toward exogenous substances, playing an important role in brain homeostasis and maintaining a healthy microenvironment for complex neuronal activities. However, it also greatly hinders drug permeability into the brain and limits the management of brain diseases. The development of new drugs that show improved transport across the BBB represents a promising strategy for Alzheimer's disease (AD) intervention. Whereas, previous study of receptor-mediated endogenous BBB transport systems has focused on a strategy of using transferrin to facilitate brain drug delivery system, a system that still suffers from limitations including synthesis procedure, stability and immunological response. In the present study, we synthetised sialic acid (SA)-modified selenium (Se) nanoparticles conjugated with an alternative peptide-B6 peptide (B6-SA-SeNPs, a synthetic selenoprotein analogue), which shows high permeability across the BBB and has the potential to serve as a novel nanomedicine for disease modification in AD. Laser-scanning confocal microscopy, flow cytometry analysis and inductively coupled plasma-atomic emission spectroscopy ICP-AES revealed high cellular uptake of B6-SA-SeNPs by cerebral endothelial cells (bEnd.3). The transport efficiency of B6-SA-SeNPs was evaluated in a Transwell experiment based on in vitro BBB model. It provided direct evidence for B6-SA-SeNPs crossing the BBB and being absorbed by PC12 cells. Moreover, inhibitory effects of B6-SA-SeNPs on amyloid-β peptide (Aβ) fibrillation could be demonstrated in PC12 cells and bEnd3 cells. B6-SA-SeNPs could not only effectively inhibit Aβ aggregation but could disaggregate preformed Aβ fibrils into non-toxic amorphous oligomers. These results suggested that B6-SA-SeNPs may provide a promising platform, particularly for the application of nanoparticles in the treatment of brain diseases. Alzheimer's disease (AD) is the world's most common form of

  7. Health hazards due to the inhalation of amorphous silica

    International Nuclear Information System (INIS)

    Merget, R.; Bruening, T.; Bauer, T.; Kuepper, H.U.; Breitstadt, R.; Philippou, S.; Bauer, H.D.

    2002-01-01

    Occupational exposure to crystalline silica dust is associated with an increased risk for pulmonary diseases such as silicosis, tuberculosis, chronic bronchitis, chronic obstructive pulmonary disease (COPD) and lung cancer. This review summarizes the current knowledge about the health effects of amorphous (non-crystalline) forms of silica. The major problem in the assessment of health effects of amorphous silica is its contamination with crystalline silica. This applies particularly to well-documented pneumoconiosis among diatomaceous earth workers. Intentionally manufactured synthetic amorphous silicas are without contamination of crystalline silica. These synthetic forms may be classified as (1) wet process silica, (2) pyrogenic (''thermal'' or ''fumed'') silica, and (3) chemically or physically modified silica. According to the different physico-chemical properties, the major classes of synthetic amorphous silica are used in a variety of products, e.g. as fillers in the rubber industry, in tyre compounds, as free-flow and anti-caking agents in powder materials, and as liquid carriers, particularly in the manufacture of animal feed and agrochemicals; other uses are found in toothpaste additives, paints, silicon rubber, insulation material, liquid systems in coatings, adhesives, printing inks, plastisol car undercoats, and cosmetics. Animal inhalation studies with intentionally manufactured synthetic amorphous silica showed at least partially reversible inflammation, granuloma formation and emphysema, but no progressive fibrosis of the lungs. Epidemiological studies do not support the hypothesis that amorphous silicas have any relevant potential to induce fibrosis in workers with high occupational exposure to these substances, although one study disclosed four cases with silicosis among subjects exposed to apparently non-contaminated amorphous silica. Since the data have been limited, a risk of chronic bronchitis, COPD or emphysema cannot be excluded. There is no

  8. Rehabilitation of a house with high radon level, using a ground ventilation system with double barrier

    International Nuclear Information System (INIS)

    Bonnefous, Y.C.; Richon, P.; Arnautou, J.C.; Sabroux, J.C.

    1995-01-01

    A ground ventilation system has been designed and implemented in a town hall in Brittany. Radon concentration in the heating unit room of this building has been reduced from 10000 Bq/m 3 to less than 200 Bq/m 3 by the means of a depressurization system using a 32 W fan, which blows air into a permeable gravel layer intercalated between two radon barrier mylar films. Results show that passive systems should be applicable; for new buildings, very low energy consumption systems with 10 W fans, are easily implemented if designed before construction

  9. Preparation of hydrogenated amorphous carbon films using a microsecond-pulsed DC capacitive-coupled plasma chemical vapor deposition system operated at high frequency up to 400 kHz

    Science.gov (United States)

    Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

    2018-06-01

    Hydrogenated amorphous carbon (a-C:H) films are deposited on silicon (Si) substrates using a high-repetition microsecond-pulsed DC plasma chemical vapor deposition (CVD) system from acetylene (C2H2) at a gas pressure of 15 Pa inside a custom-made vacuum chamber. The plasma discharge characteristics, hydrocarbon species, and the microstructure of the resulting films are examined at various pulse repetition rates from 50 to 400 kHz and a fixed duty cycle of 50%. The optical emission spectra confirmed the increase in electron excitation energy from 1.09 to 1.82 eV and the decrease in the intensity ratio of CH/C2 from 1.04 to 0.75 with increasing pulse frequency, indicating the enhanced electron impact dissociation of C2H2 gas. With increasing pulse frequency, the deposition rate gradually increased, reaching a maximum rate of 60 nm/min at 200 kHz, after which a progressive decrease was noted, whereas the deposition area was almost uniform for all the prepared films. Clear trends of increasing sp3 content (amorphization) and decreasing hydrogen (H) content in the films were observed as the pulse repetition rate increased, while most of the hydrogen atoms bonded to carbon atoms by sp3 hybridization rather than by sp2 hybridization.

  10. Anomalous magnetoresistance in amorphous metals

    International Nuclear Information System (INIS)

    Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

    1984-01-01

    The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

  11. Thermal Cycling and High-Temperature Corrosion Tests of Rare Earth Silicate Environmental Barrier Coatings

    Science.gov (United States)

    Darthout, Émilien; Gitzhofer, François

    2017-12-01

    Lutetium and yttrium silicates, enriched with an additional secondary zirconia phase, environmental barrier coatings were synthesized by the solution precursor plasma spraying process on silicon carbide substrates. A custom-made oven was designed for thermal cycling and water vapor corrosion testing. The oven can test four specimens simultaneously and allows to evaluate environmental barrier performances under similar corrosion kinetics compared to turbine engines. Coatings structural evolution has been observed by SEM on the polished cross sections, and phase composition has been analyzed by XRD. All coatings have been thermally cycled between 1300 °C and the ambient temperature, without spallation, due to their porosity and the presence of additional secondary phase which increases the thermal cycling resistance. During water vapor exposure at 1200 °C, rare earth disilicates showed a good stability, which is contradictory with the literature, due to impurities—such as Si- and Al-hydroxides—in the water vapor jets. The presence of vertical cracks allowed the water vapor to reach the substrate and then to corrode it. It has been observed that thin vertical cracks induced some spallation after 24 h of corrosion.

  12. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  13. Mg amorphous alloys for biodegradable implants

    International Nuclear Information System (INIS)

    Danez, G.P.; Koga, G.Y.; Tonucci, S.; Bolfarini, C.; Kiminami, C.S.; Botta Filho, W.J.

    2010-01-01

    The use of implants made from amorphous alloys magnesium-based with additions of zinc and calcium are promising. Properties such as biocompatibility, low density, high mechanical strength, low modulus (as compared to alloys such as stainless steel and titanium), corrosion resistance and wear resistance make it attractive for use in implants. Moreover, the by-products of corrosion and wear are not toxic and may contribute to fixation. Aiming to understand the tendency of this amorphous ternary (Mg-Zn-Ca) and expand the information about this system, this work involved the use of the topological criterion of instability (λ) and the criterion of electronegativity (Δe) to the choice of compositions. The alloys were processed into wedge-shaped and analyzed structurally and in X-ray diffraction and scanning electron microscopy. (author)

  14. Amorphous silica from rice husk at various temperatures

    International Nuclear Information System (INIS)

    Javed, S.J.; Feroze, N.; Tajwar, S.

    2008-01-01

    Rice husk is being used as a source of energy in many heat generating system because of its high calorific value and its availability in many rice producing areas. Rice husk contains approximately 20% silica which is presented in hydrated form. This hydrated silica can be retrieved as amorphous silica under controlled thermal conditions. Uncontrolled burning of rice husk produces crystalline silica which is not reactive silica but can be used as filler in many applications. Amorphous silica is reactive silica which has better market value due to its reactive nature in process industry. The present study deals with the production of amorphous silica at various temperatures from rice husk. Various ashes were prepared in tube furnace by changing the burning temperatures for fixed time intervals and analyzed by XRD. It has been observed that for two hours calculation's of rice husk renders mostly amorphous silica at 650 degree C where as at higher temperatures crystalline silica was obtained. (author)

  15. Structure and low temperature thermal relaxation of amorphized germanium

    International Nuclear Information System (INIS)

    Glover, C.J.; Ridgway, M.C.; Byrne, A.P.; Clerc, C.; Hansen, J.L.; Larsen, A.N.

    1999-01-01

    The structure of implantation-induced damage in amorphized Ge has been investigated using high resolution extended x-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method, allowing a full reconstruction of the interatomic distance distribution (RDF). For the case of MeV implantation at -196 deg C, for an ion-dose range extending two orders of magnitude beyond that required for amorphization, a dose-dependent asymmetric RDF was determined for the amorphous phase including an increase in bond-length as a function of ion dose. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid, asymmetry and width of the RDF. Such an effect was attributed to the formation (and subsequent annihilation) of three- and five-fold Co-ordinated atoms, comparing favourably to theoretical simulations of the structure of a-Ge

  16. Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

    Science.gov (United States)

    Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

    2018-06-01

    The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

  17. Effect of radiation-induced amorphization on smectite dissolution.

    Science.gov (United States)

    Fourdrin, C; Allard, T; Monnet, I; Menguy, N; Benedetti, M; Calas, G

    2010-04-01

    Effects of radiation-induced amorphization of smectite were investigated using artificial irradiation. Beams of 925 MeV Xenon ions with radiation dose reaching 73 MGy were used to simulate the effects generated by alpha recoil nuclei or fission products in the context of high level nuclear waste repository. Amorphization was controlled by X-ray diffraction, transmission electron microscopy, and Fourier transform infrared spectroscopy. An important coalescence of the smectite sheets was observed which lead to a loss of interparticle porosity. The amorphization is revealed by a loss of long-range structure and accompanied by dehydroxylation. The dissolution rate far-from-equilibrium shows that the amount of silica in solution is two times larger in the amorphous sample than in the reference clay, a value which may be enhanced by orders of magnitude when considering the relative surface area of the samples. Irradiation-induced amorphization thus facilitates dissolution of the clay-derived material. This has to be taken into account for the safety assessment of high level nuclear waste repository, particularly in a scenario of leakage of the waste package which would deliver alpha emitters able to amorphize smectite after a limited period of time.

  18. Poole-Frenkel behavior in amorphous oxide thin-film transistors prepared on SiOC

    International Nuclear Information System (INIS)

    Oh, Teresa

    2014-01-01

    The electron behavior in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) depends on the polar characteristics of SiOC, which is used as a gate dielectric. The properties of the interface between the semiconductor and SiOC were defined by using a Schottky contact with a low potential barrier and Poole-Frenkel contacts with a high potential barrier. The leakage current of SiOC, which was used as a gate insulator, decreased at the Poole-Frenkel contacts because of the high potential barrier. The ambipolar properties in the field effect transistor were observed to depend on the various characteristics of SiOC, which ranged from its behaving as an ideal insulator or as a material with a high dielectric constant. The resistance of the a-IGZO channel changed from positive to negative at SiOC, which had the lowest polarity. As to the conduction due to the diffusion current, the mobility increased with increasing carrier concentrations. However, the drift carrier conduction was related to the reduced mobility at higher carrier concentrations. The performance of the transistors was enhanced by the tunneling and the diffusion currents Rather than by the drift current caused by trapping. The Schottky contact and the Poole-Frenkel (PF) contacts at an interface between the IGZO channel and the SiOC were defined according to the heights of potential barriers caused by the depletion layer. The leakage current was very low about 10 -12 A at SiOC with PF contacts because of the height of potential barrier was double that with a Schottky contact because the tunneling conductance due to the diffusion current originated from the PF contacts of non-polar SiOC.

  19. Poole-Frenkel behavior in amorphous oxide thin-film transistors prepared on SiOC

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Teresa [Cheongju University, Cheongju (Korea, Republic of)

    2014-05-15

    The electron behavior in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) depends on the polar characteristics of SiOC, which is used as a gate dielectric. The properties of the interface between the semiconductor and SiOC were defined by using a Schottky contact with a low potential barrier and Poole-Frenkel contacts with a high potential barrier. The leakage current of SiOC, which was used as a gate insulator, decreased at the Poole-Frenkel contacts because of the high potential barrier. The ambipolar properties in the field effect transistor were observed to depend on the various characteristics of SiOC, which ranged from its behaving as an ideal insulator or as a material with a high dielectric constant. The resistance of the a-IGZO channel changed from positive to negative at SiOC, which had the lowest polarity. As to the conduction due to the diffusion current, the mobility increased with increasing carrier concentrations. However, the drift carrier conduction was related to the reduced mobility at higher carrier concentrations. The performance of the transistors was enhanced by the tunneling and the diffusion currents Rather than by the drift current caused by trapping. The Schottky contact and the Poole-Frenkel (PF) contacts at an interface between the IGZO channel and the SiOC were defined according to the heights of potential barriers caused by the depletion layer. The leakage current was very low about 10{sup -12} A at SiOC with PF contacts because of the height of potential barrier was double that with a Schottky contact because the tunneling conductance due to the diffusion current originated from the PF contacts of non-polar SiOC.

  20. Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting.

    Science.gov (United States)

    Kao, Ming-Hsuan; Shen, Chang-Hong; Yu, Pei-Chen; Huang, Wen-Hsien; Chueh, Yu-Lun; Shieh, Jia-Min

    2017-10-05

    A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V OC , J SC and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of ~9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 μW/cm 2 . Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).

  1. Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

    Science.gov (United States)

    Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-04-01

    Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

  2. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.

    Science.gov (United States)

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-05-20

    In this paper, a simple and controllable "wet pulse annealing" technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm(2) V(-1) s(-1); Ion/Ioff ratio ≈ 10(8); reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.

  3. Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2013-09-01

    We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

  4. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    Science.gov (United States)

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-01-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V−1 s−1; Ion/Ioff ratio ≈ 108; reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances. PMID:27198067

  5. Barriers to fusion

    International Nuclear Information System (INIS)

    Berriman, A.C.; Butt, R.D.; Dasgupta, M.; Hinde, D.J.; Morton, C.R.; Newton, J.O.

    1999-01-01

    The fusion barrier is formed by the combination of the repulsive Coulomb and attractive nuclear forces. Recent research at the Australian National University has shown that when heavy nuclei collide, instead of a single fusion barrier, there is a set of fusion barriers. These arise due to intrinsic properties of the interacting nuclei such deformation, rotations and vibrations. Thus the range of barrier energies depends on the properties of both nuclei. The transfer of matter between nuclei, forming a neck, can also affect the fusion process. High precision data have been used to determine fusion barrier distributions for many nuclear reactions, leading to new insights into the fusion process

  6. Irradiation-induced amorphization process in graphite

    Energy Technology Data Exchange (ETDEWEB)

    Abe, Hiroaki [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1996-04-01

    Effects of the element process of irradiation damage on irradiation-induced amorphization processes of graphite was studied. High orientation thermal decomposed graphite was cut about 100 nm width and used as samples. The irradiation experiments are carried out under the conditions of electronic energy of 100-400 KeV, ion energy of 200-600 KeV, ionic species Xe, Ar, Ne, C and He and the irradiation temperature at from room temperature to 900 K. The critical dose ({phi}a) increases exponentially with increasing irradiation temperature. The displacement threshold energy of graphite on c-axis direction was 27 eV and {phi}a{sup e} = 0.5 dpa. dpa is the average number of displacement to atom. The critical dose of ion irradiation ({phi}a{sup i}) was 0.2 dpa at room temperature, and amorphous graphite was produced by less than half of dose of electronic irradiation. Amorphization of graphite depending upon temperature is discussed. (S.Y.)

  7. Inelastic neutron scattering of amorphous ice

    International Nuclear Information System (INIS)

    Fukazawa, Hiroshi; Ikeda, Susumu; Suzuki, Yoshiharu

    2001-01-01

    We measured the inelastic neutron scattering from high-density amorphous (HDA) and low-density amorphous (LDA) ice produced by pressurizing and releasing the pressure. We found a clear difference between the intermolecular vibrations in HDA and those in LDA ice: LDA ice has peaks at 22 and 33 meV, which are also seen in the spectrum of lattice vibrations in ice crystal, but the spectrum of HDA ice does not have these peaks. The excitation energy of librational vibrations in HDA ice is 10 meV lower than that in LDA ice. These results imply that HDA ice includes 2- and 5-coordinated hydrogen bonds that are created by breakage of hydrogen bonds and migration of water molecules into the interstitial site, while LDA ice contains mainly 4-coordinated hydrogen bonds and large cavities. Furthermore, we report the dynamical structure factor in the amorphous ice and show that LDA ice is more closely related to the ice crystal structure than to HDA ice. (author)

  8. Threshold irradiation dose for amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  9. Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

    International Nuclear Information System (INIS)

    Wang, L.M.; Birtcher, R.C.

    1991-01-01

    Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

  10. Amorphous surface layers in Ti-implanted Fe

    International Nuclear Information System (INIS)

    Knapp, J.A.; Follstaedt, D.M.; Picraux, S.T.

    1979-01-01

    Implanting Ti into high-purity Fe results in an amorphous surface layer which is composed of not only Fe and Ti, but also C. Implantations were carried out at room temperature over the energy range 90 to 190 keV and fluence range 1 to 2 x 10 16 at/cm 2 . The Ti-implanted Fe system has been characterized using transmission electron microscopy (TEM), ion backscattering and channeling analysis, and (d,p) nuclear reaction analysis. The amorphous layer was observed to form at the surface and grow inward with increasing Ti fluence. For an implant of 1 x 10 17 Ti/cm 2 at 180 keV the layer thickness was 150 A, while the measured range of the implanted Ti was approx. 550 A. This difference is due to the incorporation of C into the amorphous alloy by C being deposited on the surface during implantation and subsequently diffusing into the solid. Our results indicate that C is an essential constituent of the amorphous phase for Ti concentrations less than or equal to 10 at. %. For the 1 x 10 17 Ti/cm 2 implant, the concentration of C in the amorphous phase was approx. 25 at. %, while that of Ti was only approx. 3 at. %. A higher fluence implant of 2 x 10 17 Ti/cm 2 produced an amorphous layer with a lower C concentration of approx. 10 at. % and a Ti concentration of approx. 20 at. %

  11. Information barriers

    International Nuclear Information System (INIS)

    Fuller, J.L.; Wolford, J.

    2001-01-01

    measurement equipment, that the system is functioning properly and does not incorporate any hidden features (or 'switches') that allows the host to pass out-of-spec items. Authentication of information barrier systems is an extremely important concept to consider in designing and assembling these types of inspection systems. There are a limited set of straightforward approaches to authenticate such systems, when applied in conjunction with open and cooperative system design and fabrication, that will provide a high degree of confidence to both host and inspector that the system will prevent the release of classified information and yet still inspect items in a manner consistent with the objectives of an inspection agreement. These principles have been outlined in this paper, along with areas where additional studies would be helpful. (author)

  12. RNA Virus Evolution via a Quasispecies-Based Model Reveals a Drug Target with a High Barrier to Resistance

    Directory of Open Access Journals (Sweden)

    Richard J. Bingham

    2017-11-01

    Full Text Available The rapid occurrence of therapy-resistant mutant strains provides a challenge for anti-viral therapy. An ideal drug target would be a highly conserved molecular feature in the viral life cycle, such as the packaging signals in the genomes of RNA viruses that encode an instruction manual for their efficient assembly. The ubiquity of this assembly code in RNA viruses, including major human pathogens, suggests that it confers selective advantages. However, their impact on viral evolution cannot be assessed in current models of viral infection that lack molecular details of virus assembly. We introduce here a quasispecies-based model of a viral infection that incorporates structural and mechanistic knowledge of packaging signal function in assembly to construct a phenotype-fitness map, capturing the impact of this RNA code on assembly yield and efficiency. Details of viral replication and assembly inside an infected host cell are coupled with a population model of a viral infection, allowing the occurrence of therapy resistance to be assessed in response to drugs inhibiting packaging signal recognition. Stochastic simulations of viral quasispecies evolution in chronic HCV infection under drug action and/or immune clearance reveal that drugs targeting all RNA signals in the assembly code collectively have a high barrier to drug resistance, even though each packaging signal in isolation has a lower barrier than conventional drugs. This suggests that drugs targeting the RNA signals in the assembly code could be promising routes for exploitation in anti-viral drug design.

  13. RNA Virus Evolution via a Quasispecies-Based Model Reveals a Drug Target with a High Barrier to Resistance.

    Science.gov (United States)

    Bingham, Richard J; Dykeman, Eric C; Twarock, Reidun

    2017-11-17

    The rapid occurrence of therapy-resistant mutant strains provides a challenge for anti-viral therapy. An ideal drug target would be a highly conserved molecular feature in the viral life cycle, such as the packaging signals in the genomes of RNA viruses that encode an instruction manual for their efficient assembly. The ubiquity of this assembly code in RNA viruses, including major human pathogens, suggests that it confers selective advantages. However, their impact on viral evolution cannot be assessed in current models of viral infection that lack molecular details of virus assembly. We introduce here a quasispecies-based model of a viral infection that incorporates structural and mechanistic knowledge of packaging signal function in assembly to construct a phenotype-fitness map, capturing the impact of this RNA code on assembly yield and efficiency. Details of viral replication and assembly inside an infected host cell are coupled with a population model of a viral infection, allowing the occurrence of therapy resistance to be assessed in response to drugs inhibiting packaging signal recognition. Stochastic simulations of viral quasispecies evolution in chronic HCV infection under drug action and/or immune clearance reveal that drugs targeting all RNA signals in the assembly code collectively have a high barrier to drug resistance, even though each packaging signal in isolation has a lower barrier than conventional drugs. This suggests that drugs targeting the RNA signals in the assembly code could be promising routes for exploitation in anti-viral drug design.

  14. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

    International Nuclear Information System (INIS)

    Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

    2013-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. High-Performance Corrosion-Resistant Materials: Iron-Based Amorphous-Metal Thermal-Spray Coatings: SAM HPCRM Program ? FY04 Annual Report ? Rev. 0 - DARPA DSO and DOE OCRWM Co-Sponsored Advanced Materials Program

    International Nuclear Information System (INIS)

    Farmer, J; Haslam, J; Wong, F; Ji, S; Day, S; Branagan, D; Marshall, M; Meacham, B; Buffa, E; Blue, C; Rivard, J; Beardsley, M; Buffa, E; Blue, C; Rivard, J; Beardsley, M; Weaver, D; Aprigliano, L; Kohler, L; Bayles, R; Lemieux, E; Wolejsza, T; Martin, F; Yang, N; Lucadamo, G; Perepezko, J; Hildal, K; Kaufman, L; Heuer, A; Ernst, F; Michal, G; Kahn, H; Lavernia, E

    2007-01-01

    The multi-institutional High Performance Corrosion Resistant Materials (HPCRM) Team is cosponsored by the Defense Advanced Projects Agency (DARPA) Defense Science Office (DSO) and the Department of Energy (DOE) Office of Civilian Radioactive Waste Management (OCRWM), and has developed new corrosion-resistant, iron-based amorphous metals that can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Corrosion costs the Department of Defense billions of dollars every year, with an immense quantity of material in various structures undergoing corrosion. For example, in addition to fluid and seawater piping, ballast tanks, and propulsions systems, approximately 345 million square feet of structure aboard naval ships and crafts require costly corrosion control measures. The use of advanced corrosion-resistant materials to prevent the continuous degradation of this massive surface area would be extremely beneficial. The Fe-based corrosion-resistant, amorphous-metal coatings under development may prove of importance for applications on ships. Such coatings could be used as an 'integral drip shield' on spent fuel containers, as well as protective coatings that could be applied over welds, thereby preventing exposure to environments that might cause stress corrosion cracking. In the future, such new high-performance iron-based materials could be substituted for more-expensive nickel-based alloys, thereby enabling a reduction in the $58-billion life cycle cost for the long-term storage of the Nation's spent nuclear fuel by tens of percent

  16. High-Performance Corrosion-Resistant Materials: Iron-Based Amorphous-Metal Thermal-Spray Coatings: SAM HPCRM Program ? FY04 Annual Report ? Rev. 0 - DARPA DSO & DOE OCRWM Co-Sponsored Advanced Materials Program

    Energy Technology Data Exchange (ETDEWEB)

    Farmer, J; Haslam, J; Wong, F; Ji, S; Day, S; Branagan, D; Marshall, M; Meacham, B; Buffa, E; Blue, C; Rivard, J; Beardsley, M; Buffa, E; Blue, C; Rivard, J; Beardsley, M; Weaver, D; Aprigliano, L; Kohler, L; Bayles, R; Lemieux, E; Wolejsza, T; Martin, F; Yang, N; Lucadamo, G; Perepezko, J; Hildal, K; Kaufman, L; Heuer, A; Ernst, F; Michal, G; Kahn, H; Lavernia, E

    2007-09-19

    The multi-institutional High Performance Corrosion Resistant Materials (HPCRM) Team is cosponsored by the Defense Advanced Projects Agency (DARPA) Defense Science Office (DSO) and the Department of Energy (DOE) Office of Civilian Radioactive Waste Management (OCRWM), and has developed new corrosion-resistant, iron-based amorphous metals that can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Corrosion costs the Department of Defense billions of dollars every year, with an immense quantity of material in various structures undergoing corrosion. For example, in addition to fluid and seawater piping, ballast tanks, and propulsions systems, approximately 345 million square feet of structure aboard naval ships and crafts require costly corrosion control measures. The use of advanced corrosion-resistant materials to prevent the continuous degradation of this massive surface area would be extremely beneficial. The Fe-based corrosion-resistant, amorphous-metal coatings under development may prove of importance for applications on ships. Such coatings could be used as an 'integral drip shield' on spent fuel containers, as well as protective coatings that could be applied over welds, thereby preventing exposure to environments that might cause stress corrosion cracking. In the future, such new high-performance iron-based materials could be substituted for more-expensive nickel-based alloys, thereby enabling a reduction in the $58-billion life cycle cost for the long-term storage of the Nation's spent nuclear fuel by tens of percent.

  17. A low-frequency high-voltage rf-barrier-bunching system for high-intensity neutron source compressor rings

    International Nuclear Information System (INIS)

    Hardek, T.W.; Ziomek, C.; Rees, D.

    1995-01-01

    A Los Alamos design for a 1-MW pulsed neutron source incorporates a ring utilizing an rf-barrier bunching system. This bunching concept allows uniform longitudinal beam distributions with low momentum spread. Bunching cavities are operated at the revolution frequency (1.5 MHz in this case) and each of the 2nd, 3rd, 4th, and 5th revolution frequency harmonics. Their effects combine to maintain a beam free gap in the longitudinal distribution of the accumulated beam. The cavities are driven by low-plate-resistance common-cathode configured retrode amplifiers incorporating local rf feedback. Additional adaptive feed-forward hardware is included to reduce the beam-induced bunching-gap voltages well below that achievable solely with rf feedback. Details of this system are presented along with a discussion of the various feed-back and feed-forward techniques incorporated

  18. Testing and analyses of a high temperature thermal barrier for gas-cooled reactors

    International Nuclear Information System (INIS)

    Black, W.E.; Betts, W.S.; Felten, P.

    1979-01-01

    A full size, multi-panel section of a thermal barrier system was fabricated from a nickel-base superalloy and a combination of fibrous blanket insulation materials for specific application in a steam cycle gas-cooled nuclear reactor. The 2.4 m square array was representative of the sidewall of the lower core outlet plenum and included coverplates, attachments, seals, and a simulated water-cooled liner. Testing was conducted in a reactor grade, helium-filled chamber at 816 0 C for 100 hours, which established a normal (baseline) condition; 982 0 C for 10 hours, which satisfied an emergency condition; 1093 0 C for 1 hour, which simulated a faulted condition; and 1260 0 C, which was a non-design condition test to demonstrate the temperature overshoot capability of the system. Post-test examination indicated: (1) an acceptable performance by the anti-friction chromium carbide (Cr 3 C 2 ) coating; (2) no significant galling between non-coated surfaces; (3) no distortion of attachment fixtures; (4) predictable coverplate deflection during the design conditions testing (normal, emergency, and faulted); and (5) considerable plastic deformation resulting from the near-incipient melting temperature. (orig.)

  19. Fundamentals of amorphous solids structure and properties

    CERN Document Server

    Stachurski, Zbigniew H

    2014-01-01

    Long awaited, this textbook fills the gap for convincing concepts to describe amorphous solids. Adopting a unique approach, the author develops a framework that lays the foundations for a theory of amorphousness. He unravels the scientific mysteries surrounding the topic, replacing rather vague notions of amorphous materials as disordered crystalline solids with the well-founded concept of ideal amorphous solids. A classification of amorphous materials into inorganic glasses, organic glasses, glassy metallic alloys, and thin films sets the scene for the development of the model of ideal amorph

  20. Oxygen–induced barrier height changes in aluminium – amorphous ...

    African Journals Online (AJOL)

    Se) films by exposing the samples to oxygen before the aluminium contacts were deposited. Current – voltage (I-V) measurements were carried out on the samples. The results show that the application of voltage causes charge exchange ...