Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier

International Nuclear Information System (INIS)

Henderson, Lucas B.; Ekerdt, John G.

2009-01-01

Evaluation of chemical vapor deposited amorphous ruthenium-phosphorous alloy as a copper interconnect diffusion barrier is reported. Approximately 5 nm-thick Ru(P) and TaN films in Cu/Ru(P)/SiO 2 /p-Si and Cu/TaN/SiO 2 /p-Si stacks are subjected to bias-temperature stress at electric fields from 2.0 MV/cm to 4.0 MV/cm and temperatures from 200 deg. C to 300 deg. C . Time-to-failure measurements suggest that chemical vapor deposited Ru(P) is comparable to physical vapor deposited TaN in preventing Cu diffusion. The activation energy of failure for stacks using Ru(P) as a liner is determined to be 1.83 eV in the absence of an electric field. Multiple models of dielectric failure, including the E and Schottky-type √E models indicate that Ru(P) is acceptable for use as a diffusion barrier at conditions likely in future technology generations

Structure, thermodynamics, and crystallization of amorphous hafnia

International Nuclear Information System (INIS)

Luo, Xuhui; Demkov, Alexander A.

2015-01-01

We investigate theoretically amorphous hafnia using the first principles melt and quench method. We identify two types of amorphous structures of hafnia. Type I and type II are related to tetragonal and monoclinic hafnia, respectively. We find type II structure to show stronger disorder than type I. Using the phonon density of states, we calculate the specific heat capacity for type II amorphous hafnia. Using the nudged elastic band method, we show that the averaged transition barrier between the type II amorphous hafnia and monoclinic phase is approximately 0.09 eV/HfO 2 . The crystallization temperature is estimated to be 421 K. The calculations suggest an explanation for the low thermal stability of amorphous hafnia

High-density amorphous ice: nucleation of nanosized low-density amorphous ice

Science.gov (United States)

Tonauer, Christina M.; Seidl-Nigsch, Markus; Loerting, Thomas

2018-01-01

The pressure dependence of the crystallization temperature of different forms of expanded high-density amorphous ice (eHDA) was scrutinized. Crystallization at pressures 0.05-0.30 GPa was followed using volumetry and powder x-ray diffraction. eHDA samples were prepared via isothermal decompression of very high-density amorphous ice at 140 K to different end pressures between 0.07-0.30 GPa (eHDA0.07-0.3). At 0.05-0.17 GPa the crystallization line T x (p) of all eHDA variants is the same. At pressures  >0.17 GPa, all eHDA samples decompressed to pressures  <0.20 GPa exhibit significantly lower T x values than eHDA0.2 and eHDA0.3. We rationalize our findings with the presence of nanoscaled low-density amorphous ice (LDA) seeds that nucleate in eHDA when it is decompressed to pressures  <0.20 GPa at 140 K. Below ~0.17 GPa, these nanosized LDA domains are latent within the HDA matrix, exhibiting no effect on T x of eHDA<0.2. Upon heating at pressures  ⩾0.17 GPa, these nanosized LDA nuclei transform to ice IX nuclei. They are favored sites for crystallization and, hence, lower T x . By comparing crystallization experiments of bulk LDA with the ones involving nanosized LDA we are able to estimate the Laplace pressure and radius of ~0.3-0.8 nm for the nanodomains of LDA. The nucleation of LDA in eHDA revealed here is evidence for the first-order-like nature of the HDA  →  LDA transition, supporting water’s liquid-liquid transition scenarios.

Co-sputtered amorphous Nb–Ta, Nb–Zr and Ta–Zr coatings for corrosion protection of cyclotron targets for [{sup 18}F] production

Energy Technology Data Exchange (ETDEWEB)

Skliarova, Hanna, E-mail: Hanna.Skliarova@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Ferrara, Ferrara (Italy); Azzolini, Oscar, E-mail: Oscar.Azzolini@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); Johnson, Richard R., E-mail: richard.johnson@teambest.com [BEST Cyclotron Systems Inc., 8765 Ash Street Unit 7, Vancouver, BC V6P 6T3 (Canada); Palmieri, Vincenzo, E-mail: Vincenzo.Palmieri@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Padua, Padua (Italy)

2015-08-05

Highlights: • Nb–Ta, Nb–Zr and Ta–Zr alloy films were deposited by co-sputtering. • Co-sputtered Nb–Zr and Nb–Ta alloy coatings had crystalline microstructures. • Diffusion barrier efficiency of Nb–Zr and Nb–Ta decreased with the increase of Nb %. • Co-sputtered Ta–Zr films with 30–73 at.% Ta were amorphous. • Sputtered amorphous Ta–Zr films showed superior diffusion barrier efficiency. - Abstract: Protective corrosion resistant coatings serve for decreasing the amount of ionic contaminants from Havar® entrance foils of the targets for [{sup 18}F] production. The corrosion damage of coated entrance foils is caused mainly by the diffusion of highly reactive products of water radiolysis through the protective film toward Havar® substrate. Since amorphous metal alloys (metallic glasses) are well-known to perform a high corrosion resistance, the glass forming ability, microstructure and diffusion barrier efficiency of binary alloys containing chemically inert Nb, Ta, Zr were investigated. Nb–Ta, Nb–Zr and Ta–Zr films of different alloy composition and ∼1.5 μm thickness were co-deposited by magnetron sputtering. Diffusion barrier efficiency tests used reactive aluminum underlayer and protons of acid solution and gallium atoms at elevated temperature as diffusing particles. Though co-sputtered Nb–Ta and Nb–Zr alloy films of different contents were crystalline, Ta–Zr alloy was found to form dense amorphous microstructures in a range of composition with 30–73% atomic Ta. The diffusion barrier efficiency of Nb–Zr and Nb–Ta alloy coatings decreased with increase of Nb content. The diffusion barrier efficiency of sputtered Ta–Zr alloy coatings increased with the transition from nanocrystalline columnar microstructure to amorphous for coatings with 30–73 at.% Ta.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

Science.gov (United States)

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

High-Gain Avalanche Rushing amorphous Photoconductor (HARP) detector

Energy Technology Data Exchange (ETDEWEB)

Tanioka, K. [NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)], E-mail: tanioka.k-jg@nhk.or.jp

2009-09-01

We have been studying a very sensitive image sensor since the early 1980s. In 1985, the author found for the first time that an experimental pickup tube with an amorphous selenium photoconductive target exhibits high sensitivity with excellent picture quality because of a continuous and stable avalanche multiplication phenomenon. We named the pickup tube with an amorphous photoconductive layer operating in the avalanche-mode 'HARP': High-gain Avalanche Rushing amorphous Photoconductor. A color camera equipped with the HARP pickup tubes has a maximum sensitivity of 11 lx at F8. This means that the HARP camera is about 100 times as sensitive as that of CCD camera for broadcasting. This ultrahigh-sensitivity HARP pickup tube is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications, including medical diagnoses, biotech research, and nighttime surveillance. In addition, since the HARP target can convert X-rays into electrons directly, it should be possible to exploit this capability to produce X-ray imaging devices with unparalleled levels of resolution and sensitivity.

Relaxation Time of High-Density Amorphous Ice

Science.gov (United States)

Handle, Philip H.; Seidl, Markus; Loerting, Thomas

2012-06-01

Amorphous water plays a fundamental role in astrophysics, cryoelectron microscopy, hydration of matter, and our understanding of anomalous liquid water properties. Yet, the characteristics of the relaxation processes taking place in high-density amorphous ice (HDA) are unknown. We here reveal that the relaxation processes in HDA at 110-135 K at 0.1-0.2 GPa are of collective and global nature, resembling the alpha relaxation in glassy material. Measured relaxation times suggest liquid-like relaxation characteristics in the vicinity of the crystallization temperature at 145 K. By carefully relaxing pressurized HDA for several hours at 135 K, we produce a state that is closer to the ideal glass state than all HDA states discussed so far in literature.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Large-deformation and high-strength amorphous porous carbon nanospheres

Science.gov (United States)

Yang, Weizhu; Mao, Shimin; Yang, Jia; Shang, Tao; Song, Hongguang; Mabon, James; Swiech, Wacek; Vance, John R.; Yue, Zhufeng; Dillon, Shen J.; Xu, Hangxun; Xu, Baoxing

2016-04-01

Carbon is one of the most important materials extensively used in industry and our daily life. Crystalline carbon materials such as carbon nanotubes and graphene possess ultrahigh strength and toughness. In contrast, amorphous carbon is known to be very brittle and can sustain little compressive deformation. Inspired by biological shells and honeycomb-like cellular structures in nature, we introduce a class of hybrid structural designs and demonstrate that amorphous porous carbon nanospheres with a thin outer shell can simultaneously achieve high strength and sustain large deformation. The amorphous carbon nanospheres were synthesized via a low-cost, scalable and structure-controllable ultrasonic spray pyrolysis approach using energetic carbon precursors. In situ compression experiments on individual nanospheres show that the amorphous carbon nanospheres with an optimized structure can sustain beyond 50% compressive strain. Both experiments and finite element analyses reveal that the buckling deformation of the outer spherical shell dominates the improvement of strength while the collapse of inner nanoscale pores driven by twisting, rotation, buckling and bending of pore walls contributes to the large deformation.

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

Science.gov (United States)

Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

2012-01-11

Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1976-10-01

Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

Applications in the Nuclear Industry for Corrosion-Resistant Amorphous-Metal Thermal-Spray Coatings

International Nuclear Information System (INIS)

Farmer, J; Choi, J

2007-01-01

Amorphous metal and ceramic thermal spray coatings have been developed that can be used to enhance the corrosion resistance of containers for the transportation, aging and disposal of spent nuclear fuel and high-level radioactive wastes. Fe-based amorphous metal formulations with chromium, molybdenum and tungsten have shown the corrosion resistance believed to be necessary for such applications. Rare earth additions enable very low critical cooling rates to be achieved. The boron content of these materials, and their stability at high neutron doses, enable them to serve as high efficiency neutron absorbers for criticality control. Ceramic coatings may provide even greater corrosion resistance for container applications, though the boron-containing amorphous metals are still favored for criticality control applications. These amorphous metal and ceramic materials have been produced as gas atomized powders and applied as near full density, non-porous coatings with the high-velocity oxy-fuel process. This paper summarizes the performance of these coatings as corrosion-resistant barriers, and as neutron absorbers. Relevant corrosion models are also discussed, as well as a cost model to quantify the economic benefits possible with these new materials

Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

International Nuclear Information System (INIS)

Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

2012-01-01

Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

Annealing behavior of high permeability amorphous alloys

International Nuclear Information System (INIS)

Rabenberg, L.

1980-06-01

Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

Study on applicability of highly corrosion-resistant amorphous coating techniques to components of reprocessing plant

International Nuclear Information System (INIS)

Ebata, Makoto; Okuyama, Gen; Chiba, Shigeru; Matsunaga, Tsunebumi

1991-01-01

In view of the growing need for prolongation of lives of reprocessing plant installations, we recently investigated the applicability of highly corrosion-resistant amorphous coating techniques to such plant components as to be subjected to a badly corrosive environment created by high temperatures, boiling nitric acid (HNO 3 ), etc. As the result, giving a preference to the Ta-based amorphous alloys exhibiting high corrosion-resistance in HNO 3 solutions, we made specimens of stainless steel plates coated with the above amorphous alloys through the sputtering process thereof. To our satisfaction, these specimens successfully passed various HNO 3 corrosion tests as described later on. Ta-based amorphous films give cathodic protection to 310 Nb stainless steel plates, and that with extremely low corrosion rates of themselves as protecting agents. For these reasons, we are confident that there will be no practical problems at all, in case we adopt stainless steel plates partially coated with such amorphous alloys for use in a nitric-acid environment. In this paper, we explain the comparative tests for various amorphous alloys with different compositions, referring also to the thus-selected Ta-based amorphous alloy along with several kinds of corrosion tests specially arranged for the same alloy. (author)

The glass transition in high-density amorphous ice.

Science.gov (United States)

Loerting, Thomas; Fuentes-Landete, Violeta; Handle, Philip H; Seidl, Markus; Amann-Winkel, Katrin; Gainaru, Catalin; Böhmer, Roland

2015-01-01

There has been a long controversy regarding the glass transition in low-density amorphous ice (LDA). The central question is whether or not it transforms to an ultraviscous liquid state above 136 K at ambient pressure prior to crystallization. Currently, the most widespread interpretation of the experimental findings is in terms of a transformation to a superstrong liquid above 136 K. In the last decade some work has also been devoted to the study of the glass transition in high-density amorphous ice (HDA) which is in the focus of the present review. At ambient pressure HDA is metastable against both ice I and LDA, whereas at > 0.2 GPa HDA is no longer metastable against LDA, but merely against high-pressure forms of crystalline ice. The first experimental observation interpreted as the glass transition of HDA was made using in situ methods by Mishima, who reported a glass transition temperature T g of 160 K at 0.40 GPa. Soon thereafter Andersson and Inaba reported a much lower glass transition temperature of 122 K at 1.0 GPa. Based on the pressure dependence of HDA's T g measured in Innsbruck, we suggest that they were in fact probing the distinct glass transition of very high-density amorphous ice (VHDA). Very recently the glass transition in HDA was also observed at ambient pressure at 116 K. That is, LDA and HDA show two distinct glass transitions, clearly separated by about 20 K at ambient pressure. In summary, this suggests that three glass transition lines can be defined in the p-T plane for LDA, HDA, and VHDA.

Structural-morphological variations in pseudo-barrier films of anode aluminium oxide under irradiation with high-energy particles

International Nuclear Information System (INIS)

Chernykh, M.A.; Belov, V.T.

1988-01-01

Comparative study of structural-morphological variations under electron beam effect in pseudo-barrier films of anode aluminium oxide, obtained in seven different solutions and proton or X-rays pre-irradiated to determine structure peculiarities of anode aluminium oxides, is presented. Such study is a matter of interest from the solid-phase transformation theory point of view and for anode aluminium films application under radiation. Stability increase of pseudo-barrier films of anode aluminium oxide to the effect of UEhMV-100 K microscope electron beam at standard modes of operation (75 kV) due to proton or X-rays irradiation is found. Difference in structural-monorphological variations obtained in different solutions of anode aluminium films under high-energy particles irradiation is determined. Strucural-phase microinhomogeneity of amorphous pseudo-barrier films of anode aluminium oxide and its influence on solid-phase transformations character under electron bean of maximal intensity are detected

A heating and diffusion barrier based on TaSiN x for miniaturized IC devices

International Nuclear Information System (INIS)

Cheng, H.-Y.; Chen, Y.-C.; Lee, C.-M.; Wang, S.-H.; Chin, T.-S.

2006-01-01

Highly resistive TaSiN x films investigated as candidates for heating and diffusion-barrier layers for miniaturized IC devices such as a sensor or a phases-change random access memory (PCRAM). The obtained resistivity, between 0.069-1.21 Ω cm, increases with increasing nitrogen content up to 52.83%, and fulfills the requirements as a suitable heating layer. All the as-deposited films were amorphous, and the films with substantial nitrogen content showed excellent thermal stability The amorphous structure had a very smooth surface which was stable at temperatures up to 800 deg. C. In addition to its heating capability, the amorphous structure with no grain boundaries was found to also act as a good diffusion barrier effect in contact with a tungsten electrode as determined by AES an TEM analysis. The barrier effect was evaluated by an annealing at 500 and 600 deg. C in Ar atmosphere for 30 min, respectively. The highly resistive TaSiN x heating layer successfully obstructed the diffusion of tungsten atoms from the W electrodes even when the layer was only 10 nm thick. With increasing N content, the heating and diffusion-barrier layer for PCRAM was proposed as a typical example of many potential applications

In situ neutron diffraction studies of high density amorphous ice under pressure

International Nuclear Information System (INIS)

Klotz, Stefan; Straessle, Th; Saitta, A M; Rousse, G; Hamel, G; Nelmes, R J; Loveday, J S; Guthrie, M

2005-01-01

We review recent in situ neutron diffraction studies on the structural pressure dependence and the recrystallization of dense amorphous ices up to 2 GPa. Progress in high pressure techniques and data analysis methods allows the reliable determination of all three partial structure factors of amorphous ice under pressure. The strong pressure dependence of the g OO (r) correlation function shows that the isothermal compression of high density amorphous ice (HDA) at 100 K is achieved by a contraction (∼ 20%) of the second-neighbour coordination shell leading to a strong increase in coordination. The g DD (r) and g OD (r) structure factors are, in contrast, only weakly sensitive to pressure. These data allow a comparison with structural features of the recently reported 'very high density amorphous ice' (VHDA) which indicates that VHDA at ambient pressure is very similar to compressed HDA, at least up to the second-neighbour shell. The recrystallization of HDA has been investigated in the range 0.3-2 GPa. It is shown that hydrogen-disordered phases are produced which normally grow only from the liquid, such as ice XII, and in particular ice IV. These findings are in good agreement with results on quench-recovered samples

Applications in the Nuclear Industry for Thermal Spray Amorphous Metal and Ceramic Coatings

Science.gov (United States)

Blink, J.; Farmer, J.; Choi, J.; Saw, C.

2009-06-01

Amorphous metal and ceramic thermal spray coatings have been developed with excellent corrosion resistance and neutron absorption. These coatings, with further development, could be cost-effective options to enhance the corrosion resistance of drip shields and waste packages, and limit nuclear criticality in canisters for the transportation, aging, and disposal of spent nuclear fuel. Iron-based amorphous metal formulations with chromium, molybdenum, and tungsten have shown the corrosion resistance believed to be necessary for such applications. Rare earth additions enable very low critical cooling rates to be achieved. The boron content of these materials and their stability at high neutron doses enable them to serve as high efficiency neutron absorbers for criticality control. Ceramic coatings may provide even greater corrosion resistance for waste package and drip shield applications, although the boron-containing amorphous metals are still favored for criticality control applications. These amorphous metal and ceramic materials have been produced as gas-atomized powders and applied as near full density, nonporous coatings with the high-velocity oxy-fuel process. This article summarizes the performance of these coatings as corrosion-resistant barriers and as neutron absorbers. This article also presents a simple cost model to quantify the economic benefits possible with these new materials.

Improving co-amorphous drug formulations by the addition of the highly water soluble amino acid proline

DEFF Research Database (Denmark)

Jensen, Katrine Birgitte Tarp; Löbmann, Korbinian; Rades, Thomas

2014-01-01

Co-amorphous drug amino acid mixtures were previously shown to be a promising approach to create physically stable amorphous systems with the improved dissolution properties of poorly water-soluble drugs. The aim of this work was to expand the co-amorphous drug amino acid mixture approach...... by combining the model drug, naproxen (NAP), with an amino acid to physically stabilize the co-amorphous system (tryptophan, TRP, or arginine, ARG) and a second highly soluble amino acid (proline, PRO) for an additional improvement of the dissolution rate. Co-amorphous drug-amino acid blends were prepared...... the molecular interactions in the form of hydrogen bonds between all three components in the mixture. A salt formation between the acidic drug, NAP, and the basic amino acid, ARG, was found in co-amorphous NAP–ARG. In comparison to crystalline NAP, binary NAP–TRP and NAP–ARG, it could be shown that the highly...

Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

2007-01-01

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

High Dehumidification Performance of Amorphous Cellulose Composite Membranes prepared from Trimethylsilyl Cellulose

KAUST Repository

Puspasari, Tiara

2018-04-11

Cellulose is widely regarded as an environmentally friendly, natural and low cost material which can significantly contribute the sustainable economic growth. In this study, cellulose composite membranes were prepared via regeneration of trimethylsilyl cellulose (TMSC), an easily synthesized cellulose derivative. The amorphous hydrophilic feature of the regenerated cellulose enabled fast permeation of water vapour. The pore-free cellulose layer thickness was adjustable by the initial TMSC concentration and acted as an efficient gas barrier. As a result, a 5,000 GPU water vapour transmission rate (WVTR) at the highest ideal selectivity of 1.1 x 106 was achieved by the membranes spin coated from a 7% (w/w) TMSC solution. The membranes maintained a 4,000 GPU WVTR with selectivity of 1.1 x 104 in the mixed-gas experiments, surpassing the performances of the previously reported composite membranes. This study provides a simple way to not only produce high performance membranes but also to advance cellulose as a low-cost and sustainable membrane material for dehumidification applications.

Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

Science.gov (United States)

Li, Yanhui; Wang, Zhenmin; Zhang, Wei

2018-05-01

The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.

High-density amorphous ice: A path-integral simulation

Science.gov (United States)

Herrero, Carlos P.; Ramírez, Rafael

2012-09-01

Structural and thermodynamic properties of high-density amorphous (HDA) ice have been studied by path-integral molecular dynamics simulations in the isothermal-isobaric ensemble. Interatomic interactions were modeled by using the effective q-TIP4P/F potential for flexible water. Quantum nuclear motion is found to affect several observable properties of the amorphous solid. At low temperature (T = 50 K) the molar volume of HDA ice is found to increase by 6%, and the intramolecular O-H distance rises by 1.4% due to quantum motion. Peaks in the radial distribution function of HDA ice are broadened with respect to their classical expectancy. The bulk modulus, B, is found to rise linearly with the pressure, with a slope ∂B/∂P = 7.1. Our results are compared with those derived earlier from classical and path-integral simulations of HDA ice. We discuss similarities and discrepancies with those earlier simulations.

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

NARCIS (Netherlands)

Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

2014-01-01

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

KAUST Repository

Cui, Li-Feng

2009-01-14

Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

Amorphous Cu-Ag films with high stability

International Nuclear Information System (INIS)

Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

1982-06-01

Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

ACBC to Balcite: Bioinspired Synthesis of a Highly Substituted High-Temperature Phase from an Amorphous Precursor

Energy Technology Data Exchange (ETDEWEB)

Whittaker, Michael L.; Joester, Derk (NWU)

2017-04-28

Energy-efficient synthesis of materials locked in compositional and structural states far from equilibrium remains a challenging goal, yet biomineralizing organisms routinely assemble such materials with sophisticated designs and advanced functional properties, often using amorphous precursors. However, incorporation of organics limits the useful temperature range of these materials. Herein, the bioinspired synthesis of a highly supersaturated calcite (Ca0.5Ba0.5CO3) called balcite is reported, at mild conditions and using an amorphous calcium–barium carbonate (ACBC) (Ca1- x Ba x CO3·1.2H2O) precursor. Balcite not only contains 50 times more barium than the solubility limit in calcite but also displays the rotational disorder on carbonate sites that is typical for high-temperature calcite. It is significantly harder (30%) and less stiff than calcite, and retains these properties after heating to elevated temperatures. Analysis of balcite local order suggests that it may require the formation of the ACBC precursor and could therefore be an example of nonclassical nucleation. These findings demonstrate that amorphous precursor pathways are powerfully enabling and provide unprecedented access to materials far from equilibrium, including high-temperature modifications by room-temperature synthesis.

Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

International Nuclear Information System (INIS)

Bursilll, L.A.; Peng, Julin; Gurarie, V.N.; Orlov, A.V.; Prawer, S.

1995-01-01

High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp 2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp 3 bonds is significant. 15 refs., 5 figs

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

Science.gov (United States)

Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

2018-01-31

A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

Effect of γ-(Fe,Ni) crystal-size stabilization in Fe-Ni-B amorphous ribbon

Science.gov (United States)

Gorshenkov, M. V.; Glezer, A. M.; Korchuganova, O. A.; Aleev, A. A.; Shurygina, N. A.

2017-02-01

The effect of stabilizing crystal size in a melt-quenched amorphous Fe50Ni33B17 ribbon is described upon crystallization in a temperature range of 360-400°C. The shape, size, volume fraction, and volume density have been investigated by transmission electron microscopy and X-ray diffraction methods. The formation of an amorphous layer of the Fe50Ni29B21 compound was found by means of atomic-probe tomography at the boundary of the crystallite-amorphous phase. The stabilization of crystal sizes during annealing is due to the formation of a barrier amorphous layer that has a crystallization temperature that exceeds the crystallization temperature of the matrix amorphous alloy.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Science.gov (United States)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Dynamics anomaly in high-density amorphous ice between 0.7 and 1.1 GPa

Science.gov (United States)

Handle, Philip H.; Loerting, Thomas

2016-02-01

We studied high-density amorphous ices between 0.004 and 1.6 GPa by isobaric in situ volumetry and by subsequent ex situ x-ray diffraction and differential scanning calorimetry at 1 bar. Our observations indicate two processes, namely, relaxation in the amorphous matrix and crystallization, taking place at well-separated time scales. For this reason, we are able to report rate constants of crystallization kX and glass-transition temperatures Tg in an unprecedented pressure range. Tg's agree within ±3 K with earlier work in the small pressure range where there is overlap. Both Tg and kX show a pressure anomaly between 0.7 and 1.1 GPa, namely, a kX minimum and a Tg maximum. This anomalous pressure dependence suggests a continuous phase transition from high- (HDA) to very-high-density amorphous ice (VHDA) and faster hydrogen bond dynamics in VHDA. We speculate this phenomenology can be rationalized by invoking the crossing of a Widom line between 0.7 and 1.1 GPa emanating from a low-lying HDA-VHDA critical point. Furthermore, we interpret the volumetric relaxation of the amorphous matrix to be accompanied by viscosity change to explain the findings such that the liquid state can be accessed prior to the crystallization temperature TX at 0.8 GPa.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

Development of an amorphous surge blocker for a high voltage acceleration power supply of the neutral beam injectors

International Nuclear Information System (INIS)

Mizuno, Makoto; Ohara, Yoshihiro; Watanabe, Kazuhiro; Ozaki, Akira.

1993-10-01

An amorphous surge blocker for a high voltage acceleration power supply for the neutral beam injectors has been developed. Since the saturation magnetic flux density of the amorphous core is higher than that of the ferrite core, the surge blocker made of amorphous cores can be reduced in size appreciably compared to the conventional ferrite surge blocker. A 350 kV, 0.05 volt-second amorphous surge blocker was designed, fabricated and tested. The amorphous core was made by winding an amorphous tape with a film for the layer insulation and was heat-treated to recover the magnetic characteristics. The core is molded by epoxy resin and installed in a FRP insulator tube filled with SF 6 gas for the insulation. The volt-second measured was higher than the designed value and the electrical breakdown along the cores and between layers was not observed. This test result shows that the amorphous surge blocker is applicable for a dc acceleration power supply for high energy neutral beam injectors. (author)

Interdispersed amorphous MnO{sub x}-carbon nanocomposites with superior electrochemical performance as lithium-storage material

Energy Technology Data Exchange (ETDEWEB)

Guo, Juchen; Wang, Chunsheng [Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD (United States); Liu, Qing; Zachariah, Michael R. [Department of Chemistry and Biochemistry, University of Maryland, College Park, MD (United States)

2012-02-22

The realization of manganese oxide anode materials for lithium-ion batteries is hindered by inferior cycle stability, rate capability, and high overpotential induced by the agglomeration of manganese metal grains, low conductivity of manganese oxide, and the high stress/strain in the crystalline manganese oxide structure during the repeated lithiation/delithiation process. To overcome these challenges, unique amorphous MnO{sub x}-C nanocomposite particles with interdispersed carbon are synthesized using aerosol spray pyrolysis. The carbon filled in the pores of amorphous MnO{sub x} blocks the penetration of liquid electrolyte to the inside of MnO{sub x}, thus reducing the formation of a solid electrolyte interphase and lowering the irreversible capacity. The high electronic and lithium-ion conductivity of carbon also enhances the rate capability. Moreover, the interdispersed carbon functions as a barrier structure to prevent manganese grain agglomeration. The amorphous structure of MnO{sub x} brings additional benefits by reducing the stress/strain of the conversion reaction, thus lowering lithiation/delithiation overpotential. As the result, the amorphous MnO{sub x}-C particles demonstrated the best performance as an anode material for lithium-ion batteries to date. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Research Progress on Fe-based Amorphous Coatings

Directory of Open Access Journals (Sweden)

LIANG Xiu-bing

2017-09-01

Full Text Available The latest research progresses on Fe-based amorphous coatings were reviewed. The typical alloy system and the classification of Fe-based amorphous coatings were clarified. The status, progress and development of the Fe-based amorphous coatings prepared by thermal spray processing and laser cladding process were discussed. The main mechanical properties and potential applications of the Fe-based amorphous coatings were also described. Furthermore, based on the main problems mentioned above, the future development of the Fe-based amorphous coatings was discussed, including the exploitation preparation technologies of high amorphous content of the Fe-based coatings, the development of the low cost and high performance Fe-based coating alloys system, the broadening application of Fe-based amorphous coatings, and so on.

Stabilized amorphous glibenclamide nanoparticles by high-gravity technique

International Nuclear Information System (INIS)

Yu Lei; Li Caixia; Le Yuan; Chen Jianfeng; Zou Haikui

2011-01-01

Highlights: · Amorphous glibenclamide nanoparticles of 220 nm are obtained using the high-gravity technique. · The dissolution rate of these nanoparticles achieves 85% in 5 min, while those of the raw glibenclamide and the commercial glibenclamide tablet only reach 35% and 55% respectively during the same period. · The morphology, particle size, crystalline form and dissolution rate of these nanoparticles almost remain constant after keeping more than 70 days. - Abstract: The stable amorphous glibenclamide nanoparticles was obtained via anti-solvent precipitation using the high-gravity technique in this study. The effects of operating variables on the particle size were investigated. The properties of glibenclamide nanoparticles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, differential scanning calorimetry (DSC) and dissolution test. The prepared glibenclamide nanoparticles had a mean size of 220 nm within a narrow distribution. The dissolution rate of glibenclamide nanoparticles was obviously faster than that of the raw glibenclamide or the commercial glibenclamide tablet. It achieved 85% in 5 min, while those of the raw glibenclamide and the commercial glibenclamide tablet achieved 35% and 55% respectively during the same period. The physical stability of the nanoparticles was tested after storing for more than 70 days at room conditions. Their morphology, particle size, crystalline form and dissolution rate almost remained constant during storage.

Formation of soft magnetic high entropy amorphous alloys composites containing in situ solid solution phase

Science.gov (United States)

Wei, Ran; Sun, Huan; Chen, Chen; Tao, Juan; Li, Fushan

2018-03-01

Fe-Co-Ni-Si-B high entropy amorphous alloys composites (HEAACs), which containing high entropy solid solution phase in amorphous matrix, show good soft magnetic properties and bending ductility even in optimal annealed state, were successfully developed by melt spinning method. The crystallization phase of the HEAACs is solid solution phase with body centered cubic (BCC) structure instead of brittle intermetallic phase. In addition, the BCC phase can transformed into face centered cubic (FCC) phase with temperature rise. Accordingly, Fe-Co-Ni-Si-B high entropy alloys (HEAs) with FCC structure and a small amount of BCC phase was prepared by copper mold casting method. The HEAs exhibit high yield strength (about 1200 MPa) and good plastic strain (about 18%). Meanwhile, soft magnetic characteristics of the HEAs are largely reserved from HEAACs. This work provides a new strategy to overcome the annealing induced brittleness of amorphous alloys and design new advanced materials with excellent comprehensive properties.

Crystalline to amorphous transformation in silicon

International Nuclear Information System (INIS)

Cheruvu, S.M.

1982-09-01

In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

Energy Technology Data Exchange (ETDEWEB)

Xu, Kai, E-mail: kaixu@whut.edu.cn [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Hrma, Pavel, E-mail: pavel.hrma@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Washton, Nancy; Schweiger, Michael J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Kruger, Albert A. [U.S. Department of Energy, Office of River Protection, Richland, WA 99352 (United States)

2017-01-15

The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min{sup −1} to 700 °C was investigated with transmission electron microscopy, {sup 27}Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m{sup 2} g{sup −1}). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification. - Highlights: • Porous amorphous alumina formed in a simulated high-Al HLW melter feed during heating. • The feed had a high specific surface area at 300 °C ≤ T ≤ 500 °C. • Porous amorphous alumina induced increased specific surface area.

Ion implantation and amorphous metals

International Nuclear Information System (INIS)

Hohmuth, K.; Rauschenbach, B.

1981-01-01

This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

Subsurface injection of dissolved ferric chloride to form a chemical barrier: Laboratory investigations

International Nuclear Information System (INIS)

Morrison, S.J.; Spangler, R.R.; Morris, S.A.

1996-01-01

A chemical barrier is a permeable zone of reactive materials emplaced in the subsurface to remove ground-water contaminants while allowing clean ground water to pass through. Because dissolved ferric chloride hydrolyzes to amorphous ferric oxyhydroxide when it contacts calcite (CaCO 3 ), it may be viable to emplace a zone of amorphous ferric oxyhydroxide (an absorbent for U, Mo, and other inorganic contaminants) into calcite-bearing geologic units by injecting ferric chloride through wells. For a chemical barrier to be successful, it must remain permeable and must be immobile. This investigation monitored chemical compositions, hydraulic conductivity, and iron mobility in laboratory columns and in a two-dimensional tank to determine the viability of injecting ferric chloride to form an amorphous ferric oxyhydroxide chemical barrier. The authors introduced a ferric chloride solution (1,345 mg/1[0.024 m] Fe) to calcite-bearing alluvial gravel to form a chemical barrier of amorphous ferric oxyhydroxide, followed by solutions contaminated with U and Mo. The simulated chemical barriers decreased U and Mo concentrations to less than 0.05 mg/l (2.1 x 10 -7 m) and 0.01 (1.0 x 10 -7 m), respectively; however, the breakthrough front is spread out with concentrations increasing to more than regulatory guideline values sooner than predicted. The hydraulic conductivity of calcite-bearing alluvial gravel decreased substantially during ferric chloride introduction because of the formation of carbon dioxide but increased to within factors of 1 to 5 of the original value as synthetic ground water flowed through the system. Amorphous ferric oxyhydroxide that formed in these experiments remained immobile at flow rates exceeding those typical of ground water. These laboratory results, in conjunction with site-specific characterization data, can be used to design chemical barriers emplaced by injection of ferric chloride

High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals

International Nuclear Information System (INIS)

Inui, H.; Mori, H.; Sakata, T.

1992-01-01

An electron-irradiation-induced crystalline-to-amorphous (CA) transition in α-SiC has been studied by high-resolution electron microscopy (HREM). The irradiation-produced damage structure was examined as a function of dose of electrons by taking high-resolution maps extending from the unirradiated crystalline region to the completely amorphized region. In the intermediate region between those two regions, that is in the CA transition region, the damage structure was essentially a mixture of crystalline and amorphous phases. The volume fraction of the amorphous phase was found to increase with increasing dose of electrons and no discrete crystalline-amorphous interface was observed in the CA transition region. These facts indicate the heterogeneous and gradual nature of the CA transition. In the transition region close to the unirradiated crystalline region, a sort of fragmentation of the crystal lattice was observed to occur, crystallites with slightly different orientations with respect to the parent crystal were formed owing to the strain around the dispersed local amorphous regions. In the transition region close to the amorphized region, these crystallites were reduced in size and were embedded in an amorphous matrix. This damage structure is the result of the increased volume fraction of the amorphous phase. In the completely amorphized region, no lattice fringes were recognized in the HREM images. The atomistic process of the CA transition is discussed on the basis of the present results and those from previous studies. (Author)

Electra-Slate proposal to develop an amorphous PV roofslate

International Nuclear Information System (INIS)

Bouverat, P.R.

2000-01-01

The objective of this project has been to create a photovoltaic roofing product, the Electra-Slate, that appears physically and dimensionally to conform with a standard pattern, but is designed in a way that any roofer could install the device with total safety on an existing truss, rafter, felt and batten construction roof without additional training and supervision. This has been achieved by developing new concepts in high voltage Amorphous Silicon plate, with in built series connections, and by making an inboard parallel bus connection system, which is self connecting during normal roofing placement. The remaining barriers to be overcome are further reductions in cost and increased output. These two effects combine to form the barrier of installed cost/kilowatt. However it is clear that cost/m 2 is already more competitive for this type of product than for a 'PV' module type of product. (author)

Oxygen–induced barrier height changes in aluminium – amorphous ...

African Journals Online (AJOL)

The results show that the application of voltage causes charge exchange between the surface states and the semiconductor leading to a change in the height of the potential barrier for electrons passing from aluminium into the a-Se films. The empirically determined values of barrier height of Al/a-Se diodes with thin and ...

Fluxing purification and its effect on magnetic properties of high-B{sub s} FeBPSiC amorphous alloy

Energy Technology Data Exchange (ETDEWEB)

Pang, Jing [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Wang, Anding, E-mail: anding@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Yue, Shiqiang [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Kong, Fengyu [School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo 315016 (China); Qiu, Keqiang, E-mail: kqqiu@163.com [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Chang, Chuntao; Wang, Xinmin [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Liu, Chain-Tsuan, E-mail: chainliu@cityu.edu.hk [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

2017-07-01

Highlights: • Surface crystallization in Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was inhibited by flux purification. • Amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was made with industrial process and materials. • The ribbons exhibit high B{sub s} of 1.65 T, low H{sub c} of 2 A/m, and high μ{sub e} of 9.7 × 10{sup 3}. • High melting point inclusions trigger the surface crystallization as nuclei. - Abstract: A high-B{sub s} amorphous alloy with the base composition Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} was used to study the effects of fluxing purification on amorphous forming ability and magnetic properties of the alloy prepared with raw materials in industrialization. By using fluxing purification, the surface crystallization was suppressed and fully amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbons with a maximum thickness of 48 μm were successfully achieved by using an industrial process and materials. The amorphous ribbons made with industrial-purified alloys exhibit excellent magnetic properties, containing high-B{sub s} of 1.65 T, low H{sub c} of 2.0 A/m, and high μ{sub e} of 9.7 × 10{sup 3} at 1 kHz. Impurities in the melting alloys exist in three forms and have different effluences on magnetic properties. The surface crystallization was triggered by the impurities which exist as high melting point inclusions serving as nuclei. Thus, fluxing purification is a feasible way for industrialization of high-B{sub s} FeBPSiC amorphous alloys.

High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

He, Z.; Liu, X. R.; Hong, S. M., E-mail: hpswjtu@gmail.com, E-mail: smhong@home.swjtu.edu.cn [Laboratory of High Pressure Physics, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031 (China); Wang, Z. G. [National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900 (China); Zhu, H. Y. [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Peng, J. P. [School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-07-07

The high-pressure behavior of melt-quenched amorphous selenium (a-Se) has been investigated via ultrasonic measurements and Raman scattering at room temperature. The ultrasonic measurements were conducted on a-Se in a multi-anvil apparatus with two different sample assemblies at pressures of up to 4.5 and 4.8 GPa. We discovered that similar kinks occur in the slopes of the pressure dependence characteristics of the travel time and the sound velocity in both shear and longitudinal waves in the 2.0–2.5 GPa range. These kinks are independent of the sample assemblies, indicating an intrinsic transformation of the a-Se. Additionally, we deduced the pressure-volume relationship of a-Se from the sound velocity characteristics using the Birch–Murnaghan equation of state, and the results agreed well with those of previous reports. In situ high-pressure Raman scattering measurements of a-Se were conducted in a diamond anvil cell with an 830 nm excitation line up to a pressure of 4.3 GPa. We found that the characteristic band of a-Se at ∼250 cm{sup −1} experienced a smooth shift to a lower frequency with pressure, but a sharp slope change in the band intensity versus pressure occurred near 2.5 GPa. The results of X-ray diffraction and differential scanning calorimetry measurements indicate that the samples remain in their amorphous states after decompression. Thus, we proposed that the abnormal compression behavior of a-Se in the 2.0–2.5 GPa range can be attributed to pressure-induced local atomic reconfiguration, implying an amorphous-amorphous transition of the elementary selenium.

Amorphous intergranular films in silicon nitride ceramics quenched from high temperatures

International Nuclear Information System (INIS)

Cinibulk, M.K.; Kleebe, H.; Schneider, G.A.; Ruehle, M.

1993-01-01

High-temperature microstructure of an MgO-hot-pressed Si 3 N 4 and a Yb 2 O 3 + Al 2 O 3 -sintered/annealed Si 3 N 4 were obtained by quenching thin specimens from temperatures between 1,350 and 1,550 C. Quenching materials from 1,350 C produced no observable exchanges in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼1,450 C also showed no significant changes in the general microstructure or morphology of the Si 3 N 4 grains, the amorphous intergranular film thickness increased substantially from an initial ∼1 nm in the slowly cooled material to 1.5--9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1,550 C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching

Structure of high-density amorphous ice under pressure

International Nuclear Information System (INIS)

Klotz, S.; Hamel, G.; Loveday, J.S.; Nelmes, R.J.; Guthrie, M.; Soper, A.K.

2002-01-01

We report in situ neutron diffraction studies of high-density amorphous ice (HDA) at 100 K at pressures up to 2.2 GPa. We find that the compression is achieved by a strong contraction (∼20%) of the second neighbor coordination shell, so that at 2.2 GPa it closely approaches the first coordination shell, which itself remains intact in both structure and size. The hydrogen bond orientations suggest an absence of hydrogen bonding between first and second shells and that HDA has increasingly interpenetrating hydrogen bond networks under pressure

Thermal relaxation of magnetic clusters in amorphous Hf57Fe43 alloy

International Nuclear Information System (INIS)

Pajic, Damir; Zadro, Kreso; Ristic, Ramir; Zivkovic, Ivica; Skoko, Zeljko; Babic, Emil

2007-01-01

The magnetization processes in binary magnetic/non-magnetic amorphous alloy Hf 57 Fe 43 are investigated by the detailed measurement of magnetic hysteresis loops, temperature dependence of magnetization, relaxation of magnetization and magnetic ac susceptibility, including a nonlinear term. Blocking of magnetic moments at lower temperatures is accompanied by the slow relaxation of magnetization and magnetic hysteresis loops. All of the observed properties are explained by the superparamagnetic behaviour of the single domain magnetic clusters inside the non-magnetic host, their blocking by the anisotropy barriers and thermal fluctuation over the barriers accompanied by relaxation of magnetization. From magnetic viscosity analysis based on thermal relaxation over the anisotropy barriers it is found that magnetic clusters occupy the characteristic volume from 25 up to 200 nm 3 . The validity of the superparamagnetic model of Hf 57 Fe 43 is based on the concentration of iron in the Hf 100-x Fe x system that is just below the threshold for long range magnetic ordering. This work also throws more light on the magnetic behaviour of other amorphous alloys

High strength nanostructured Al-based alloys through optimized processing of rapidly quenched amorphous precursors.

Science.gov (United States)

Kim, Song-Yi; Lee, Gwang-Yeob; Park, Gyu-Hyeon; Kim, Hyeon-Ah; Lee, A-Young; Scudino, Sergio; Prashanth, Konda Gokuldoss; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

2018-01-18

We report the methods increasing both strength and ductility of aluminum alloys transformed from amorphous precursor. The mechanical properties of bulk samples produced by spark-plasma sintering (SPS) of amorphous Al-Ni-Co-Dy powders at temperatures above 673 K are significantly enhanced by in-situ crystallization of nano-scale intermetallic compounds during the SPS process. The spark plasma sintered Al 84 Ni 7 Co 3 Dy 6 bulk specimens exhibit 1433 MPa compressive yield strength and 1773 MPa maximum strength together with 5.6% plastic strain, respectively. The addition of Dy enhances the thermal stability of primary fcc Al in the amorphous Al-TM -RE alloy. The precipitation of intermetallic phases by crystallization of the remaining amorphous matrix plays important role to restrict the growth of the fcc Al phase and contributes to the improvement of the mechanical properties. Such fully crystalline nano- or ultrafine-scale Al-Ni-Co-Dy systems are considered promising for industrial application because their superior mechanical properties in terms of a combination of very high room temperature strength combined with good ductility.

Structural amorphous steels

International Nuclear Information System (INIS)

Lu, Z.P.; Liu, C.T.; Porter, W.D.; Thompson, J.R.

2004-01-01

Recent advancement in bulk metallic glasses, whose properties are usually superior to their crystalline counterparts, has stimulated great interest in fabricating bulk amorphous steels. While a great deal of effort has been devoted to this field, the fabrication of structural amorphous steels with large cross sections has remained an alchemist's dream because of the limited glass-forming ability (GFA) of these materials. Here we report the discovery of structural amorphous steels that can be cast into glasses with large cross-section sizes using conventional drop-casting methods. These new steels showed interesting physical, magnetic, and mechanical properties, along with high thermal stability. The underlying mechanisms for the superior GFA of these materials are discussed

Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

Energy Technology Data Exchange (ETDEWEB)

Wang, Jilin [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Gu, Yunle [School of Material Science and Engineering, Wuhan Institute of Technology, Wuhan 430073 (China); Li, Zili [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Wang, Weimin, E-mail: wangwm@hotmail.com [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Fu, Zhengyi [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2013-06-01

Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH{sub 4} played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B{sub 2}O{sub 3} and KBH{sub 4} as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH{sub 4} played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed.

Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

International Nuclear Information System (INIS)

Wang, Jilin; Gu, Yunle; Li, Zili; Wang, Weimin; Fu, Zhengyi

2013-01-01

Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH 4 played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B 2 O 3 and KBH 4 as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH 4 played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed

Neutron irradiation induced amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Hay, J.C.

1998-01-01

This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

Intrinsic charge trapping in amorphous oxide films: status and challenges

Science.gov (United States)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

Potential Energy Landscape of the Liquid-Liquid Phase Transition in Water and the transformation between Low-Density and High-Density Amorphous Ice

Science.gov (United States)

Giovambattista, N.; Sciortino, F.; Starr, F. W.; Poole, P. H.

The potential energy landscape (PEL) formalism is a valuable approach within statistical mechanics for describing supercooled liquids and glasses. We use the PEL formalism and computer simulations to study the transformation between low-density (LDL) and high-density liquid (HDL) water, and between low-density (LDA) and high-density amorphous ice (HDA). We employ the ST2 water model that exhibits a LDL-HDL first-order phase transition and a sharp LDA-HDA transformation, as observed in experiments. Our results are consistent with the view that LDA and HDA configurations are associated with two distinct regions (megabasins) of the PEL that are separated by a potential energy barrier. At higher temperature, we find that LDL configurations are located in the same megabasin as LDA, and that HDL configurations are located in the same megabasin as HDA. We show that the pressure-induced LDL-HDL and LDA-HDA transformations occur along paths that interconnect these two megabasins, but that the path followed by the liquid and the amorphous ice differ. We also study the liquid-to-ice-VII first-order phase transition. The PEL properties across this transition are qualitatively similar to the changes found during the LDA-HDA transformation, supporting the interpretation that the LDA-HDA transformation is a first-order-like phase transition between out-of-equilibrium states.

Amorphous drugs and dosage forms

DEFF Research Database (Denmark)

Grohganz, Holger; Löbmann, K.; Priemel, P.

2013-01-01

The transformation to an amorphous form is one of the most promising approaches to address the low solubility of drug compounds, the latter being an increasing challenge in the development of new drug candidates. However, amorphous forms are high energy solids and tend to recry stallize. New...... formulation principles are needed to ensure the stability of amorphous drug forms. The formation of solid dispersions is still the most investigated approach, but additional approaches are desirable to overcome the shortcomings of solid dispersions. Spatial separation by either coating or the use of micro-containers...... before single molecules are available for the formation of crystal nuclei, thus stabilizing the amorphous form....

Amorphous nickel/cobalt tungsten sulfide electrocatalysts for high-efficiency hydrogen evolution reaction

Energy Technology Data Exchange (ETDEWEB)

Yang, Lun [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Xinglong, E-mail: hkxlwu@nju.edu.cn [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Department of Physics, NingBo University, NingBo 315001 (China); Zhu, Xiaoshu [Center for Analysis and Testing, Nanjing Normal University, Nanjing 210093 (China); He, Chengyu; Meng, Ming; Gan, Zhixing [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

2015-06-30

Graphical abstract: - Highlights: • Amorphous nickel/cobalt tungsten sulfides were synthesized by a thermolytic process. • Amorphous NiWS and CoWS could realize hydrogen evolution efficiently. • Ni/Co promotion and annealing alter the porous structure and chemical bonding states. • Active sites on the surface of amorphous WS{sub x} are increased with Ni or Co doping. • Amorphous NiWS and CoWS have immense potentials in water splitting devices. - Abstract: The hydrogen evolution reaction (HER), an appealing solution for future energy supply, requires efficient and inexpensive electrocatalysts with abundant active surface sites. Although crystalline MoS{sub 2} and WS{sub 2} are promising candidates, their activity is dominated by edge sites. Amorphous tungsten sulfide prepared so far lacks the required active sites and its application has thus been hampered. In this work, nickel and cobalt incorporated amorphous tungsten sulfide synthesized by a thermolytic process is demonstrated to enhance the HER efficiency dramatically. The amorphous nickel tungsten sulfide (amorphous NiWS) annealed at 210 °C delivers the best HER performance in this system boasting a Tafel slope of 55 mV per decade and current density of 8.6 mA cm{sup −2} at 250 mV overpotential in a sustained test for 24 h. The introduction of Ni or Co into the catalyst and subsequent thermal treatment alters the porous structure and chemical bonding states thereby increasing the density of active sites on the surface.

High transmittance contrast in amorphous to hexagonal phase of Ge2Sb2Te5: Reversible NIR-window

Science.gov (United States)

Singh, Palwinder; Singh, A. P.; Kanda, Neetu; Mishra, Monu; Gupta, Govind; Thakur, Anup

2017-12-01

Ge2Sb2Te5 (GST) is one of the best phase change materials because of its splendid set of properties, viz., high thermal stability, fast crystallization speed, good endurance, scalability, and reliability. Phase transition [amorphous → face centered cubic (fcc) → hexagonal close packed (hcp)] of GST thin films with annealing was studied using X-ray diffraction. Thin films in amorphous, fcc, and hcp phases are highly, medium, and negligible transparent in the near infra-red region, respectively. The optical transmission in amorphous, fcc, and hcp phases is ˜92%, ˜46%, and ˜2%, respectively, at the wavelength of 2740 nm. At 2740 nm, a high transmission contrast (˜90%) is observed with phase transition from the amorphous to hcp phase. By utilizing large transmission contrast, it is demonstrated that GST can be availed as a potential candidate for reversible near infra-red-window. The sharp change in optical transmission with phase transition can be understood from the change in density of states in the valence band.

Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

Energy Technology Data Exchange (ETDEWEB)

Jiao, Guohua [Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen (China); The Chinese University of Hong Kong, Shatin, Hong Kong (China); Liu, Bo [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Chengdu (China); Li, Qiran [CNRS-Universite Paris Sud UMR 8622, Institut d' Electronique Fondamentale, Orsay (France)

2015-08-15

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization. (orig.)

PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

Energy Technology Data Exchange (ETDEWEB)

Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

1993-11-01

The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)

Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples

International Nuclear Information System (INIS)

Pan, Hung-Chun; Hsieh, Tsung-Eong

2012-01-01

Highlights: ► Diffusion barrier features, activation energies of IMC growth and mechanical behaviors of electroless Co(W,P)/PbSn joints. ► Amorphous Co(W,P) is a sacrificial- plus stuffed-type barrier while polycrystalline Co(W,P) is a sacrificial-type barrier. ► Ductile mode dominates the failure of Co(W,P)/PbSn joints. ► Phosphorus content of Co(W,P) is crucial to the barrier capability and microstructure evolution at Co(W,P)/PbSn interface. ► Diffusion barrier capability is governed by the nature of chemical bonds, rather than the crystallinity of materials. - Abstract: Diffusion barrier characteristics, activation energy (E a ) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as α-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/α-Co(W,P) samples subjected to liquid-state aging at 250 °C. In contrast, IMCs resided on the P-rich layer in PbSn/α-Co(W,P) samples subjected to solid-state aging at 150 °C. Thick IMCs neighboring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. α-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E a 's for PbSn/α-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both α- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength.

Amorphous silicon ionizing particle detectors

Science.gov (United States)

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

Directory of Open Access Journals (Sweden)

Cesar Calleja

2016-01-01

Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

The Stabilization of Amorphous Zopiclone in an Amorphous Solid Dispersion.

Science.gov (United States)

Milne, Marnus; Liebenberg, Wilna; Aucamp, Marique

2015-10-01

Zopiclone is a poorly soluble psychotherapeutic agent. The aim of this study was to prepare and characterize an amorphous form of zopiclone as well as the characterization and performance of a stable amorphous solid dispersion. The amorphous form was prepared by the well-known method of quench-cooling of the melt. The solid dispersion was prepared by a solvent evaporation method of zopiclone, polyvinylpyrrolidone-25 (PVP-25), and methanol, followed by freeze-drying. The physico-chemical properties and stability of amorphous zopiclone and the solid dispersion was studied using differential scanning calorimetry (DSC), infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), hot-stage microscopy (HSM), X-ray diffractometry (XRD), solubility, and dissolution studies. The zopiclone amorphous solid-state form was determined to be a fragile glass; it was concluded that the stability of the amorphous form is influenced by both temperature and water. Exposure of amorphous zopiclone to moisture results in rapid transformation of the amorphous form to the crystalline dihydrated form. In comparison, the amorphous solid dispersion proved to be more stable with increased aqueous solubility.

Diffusion of Lithium Ions in Amorphous and Crystalline Poly(ethylene oxide)_3:LiCF_3SO_3 Polymer Electrolytes

International Nuclear Information System (INIS)

Xue, Sha; Liu, Yingdi; Li, Yaping; Teeters, Dale; Crunkleton, Daniel W.; Wang, Sanwu

2017-01-01

The PEO_3:LiCF_3SO_3 polymer electrolyte has attracted significant research due to high conductivity and enhanced stability in lithium polymer batteries. Most experimental studies have shown that amorphous PEO lithium salt electrolytes have higher conductivity than the crystalline ones. Other studies, however, have shown that crystalline PEO salt complexes can conduct ions. As a result, further theoretical investigations are warranted to help clarify the issue. In this work, we use density functional theory with the climbing image nudged elastic band method to investigate the atomic-scale mechanism of lithium ion transport in the polymer electrolytes. We also use density functional theory and ab initio molecular dynamics simulations to obtain the amorphous structure of PEO_3:LiCF_3SO_3. The diffusion pathways and activation energies of lithium ions in both crystalline and amorphous PEO_3:LiCF_3SO_3 are determined. In crystalline PEO_3:LiCF_3SO_3, the activation energy for the low-barrier diffusion pathway is approximately 1.0 eV. In the amorphous phase, the value is 0.6 eV. This result would support the experimental observation that amorphous PEO_3:LiCF_3SO_3 has higher ionic conductivity than the crystalline phase.

Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials

NARCIS (Netherlands)

Kroezen, H. J.; Eising, G.; ten Brink, Gert; Palasantzas, G.; Kooi, B. J.; Pauza, A.

2012-01-01

The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface

Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

Science.gov (United States)

Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

2018-02-28

In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

International Nuclear Information System (INIS)

Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

1996-10-01

Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

International Nuclear Information System (INIS)

Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

1996-01-01

Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

Amorphous metal composites

International Nuclear Information System (INIS)

Byrne, M.A.; Lupinski, J.H.

1984-01-01

This patent discloses an improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

International Nuclear Information System (INIS)

Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

2016-01-01

We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

One-Pot Synthesis of Tunable Crystalline Ni3 S4 @Amorphous MoS2 Core/Shell Nanospheres for High-Performance Supercapacitors.

Science.gov (United States)

Zhang, Yu; Sun, Wenping; Rui, Xianhong; Li, Bing; Tan, Hui Teng; Guo, Guilue; Madhavi, Srinivasan; Zong, Yun; Yan, Qingyu

2015-08-12

Transition metal sulfides gain much attention as electrode materials for supercapacitors due to their rich redox chemistry and high electrical conductivity. Designing hierarchical nanostructures is an efficient approach to fully utilize merits of each component. In this work, amorphous MoS(2) is firstly demonstrated to show specific capacitance 1.6 times as that of the crystalline counterpart. Then, crystalline core@amorphous shell (Ni(3)S(4)@MoS(2)) is prepared by a facile one-pot process. The diameter of the core and the thickness of the shell can be independently tuned. Taking advantages of flexible protection of amorphous shell and high capacitance of the conductive core, Ni(3)S(4) @amorphous MoS(2) nanospheres are tested as supercapacitor electrodes, which exhibit high specific capacitance of 1440.9 F g(-1) at 2 A g(-1) and a good capacitance retention of 90.7% after 3000 cycles at 10 A g(-1). This design of crystalline core@amorphous shell architecture may open up new strategies for synthesizing promising electrode materials for supercapacitors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroless Ni-Mo-P diffusion barriers with Pd-activated self-assembled monolayer on SiO2

International Nuclear Information System (INIS)

Liu Dianlong; Yang Zhigang; Zhang Chi

2010-01-01

Ternary Ni-based amorphous films can serve as a diffusion barrier layer for Cu interconnects in ultralarge-scale integration (ULSI) applications. In this paper, electroless Ni-Mo-P films deposited on SiO 2 layer without sputtered seed layer were prepared by using Pd-activated self-assembled monolayer (SAM). The solutions and operating conditions for pretreatment and deposition were presented, and the formation of Pd-activated SAM was demonstrated by XPS (X-ray photoelectron spectroscopy) analysis and BSE (back-scattered electron) observation. The effects of the concentration of Na 2 MoO 4 added in electrolytes, pH value, and bath temperature on the surface morphology and compositions of Ni-Mo-P films were investigated. The microstructures, diffusion barrier property, electrical resistivity, and adhesion were also examined. Based on the experimental results, the Ni-Mo-P alloys produced by using Pd-activated SAM had an amorphous or amorphous-like structure, and possessed good performance as diffusion barrier layer.

Radiation tolerance of amorphous semiconductors

International Nuclear Information System (INIS)

Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

1976-01-01

In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

Science.gov (United States)

Xu, Kai; Hrma, Pavel; Washton, Nancy; Schweiger, Michael J.; Kruger, Albert A.

2017-01-01

The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min-1 to 700 °C was investigated with transmission electron microscopy, 27Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m2 g-1). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification.

Role of thermodynamic, kinetic and structural factors in the recrystallization behavior of amorphous erythromycin salts

Energy Technology Data Exchange (ETDEWEB)

Nanakwani, Kapil; Modi, Sameer R.; Kumar, Lokesh; Bansal, Arvind K., E-mail: akbansal@niper.ac.in

2014-04-01

Graphical abstract: - Highlights: • Crystallization kinetics of amorphous erythromycin salts was assessed. • Contribution of thermodynamic, kinetic and structural factors was evaluated. • Role of counterions on physical stability of amorphous salts was investigated. • Implications of the study: In rationalizing stabilization approach for amorphous form. - Abstract: Amorphous form has become an important drug delivery strategy for poorly water soluble drugs. However, amorphous form has inherent physical instability due to its tendency to recrystallize to stable crystalline form. In the present study, amorphous forms of erythromycin free base (ED) and its salts namely, stearate (ES), phosphate (EP) and thiocyanate (ET) were generated by in situ melt quenching and evaluated for their crystallization tendency. Salts were characterized for kinetic, thermodynamic and structural factors to understand crystallization behavior. Kinetics of crystallization followed the order as ES > EP > ET > ED. Fragility and molecular mobility does not completely explain these findings. However, configurational entropy (S{sub conf}), indicative of entropic barrier to crystallization, followed the order as ET > EP > ES > ED. Lower crystallization tendency of ED can be explained by its lower thermodynamic driving force for crystallization (H{sub conf}). This correlated well with different structural parameters for the counter ions.

A mechanistic model for radiation-induced crystallization and amorphization in U3Si

International Nuclear Information System (INIS)

Rest, J.

1994-06-01

Radiation-induced amorphization is assessed. A rate-theory model is formulated wherein amorphous clusters are formed by the damage event These clusters are considered centers of expansion (CE), or excess-free-volume zones. Simultaneously, centers of compression (CC) are created in the material. The CCs are local regions of increased density that travel through the material as an elastic (e.g., acoustic) shock wave. The CEs can be annihilated upon contact with CCs (annihilation probability depends on height of the energy barrier), forming either a crystallized region indistinguishable from the host material, or a region with a slight disorientation (recrystallized grain). Recrystallized grains grow by the accumulation of additional CCs. Full amorphization is calculated on the basis of achieving a fuel volume fraction consistent with the close packing of spherical entities. Amorphization of a recrystallized grain is hindered by the grain boundary. Preirradiation of U 3 Si above the critical temperature for amorphization results in of nanometer-size grains. Subsequent reirradiation below the critical temperature shows that the material has developed a resistance to radiation-induced amorphization higher dose needed to amorphize the preirradiated samples than now preirradiated samples. In the model, it is assumed that grain boundaries act as effective defect sinks, and that enhanced defect annihilation is responsible for retarding amorphization at low temperature. The calculations have been validated against data from ion-irradiation experiments with U 3 Si. To obtain additional validation, the model has also been applied to the ion-induced motion of the interface between crystalline and amorphous phases of U 3 Si. Results of this analysis are compared to data and results of calculations for ion bombardment of Si

Transformation processes during annealing of Al-amorphous alloys

International Nuclear Information System (INIS)

Petrescu, N.; Petrescu, M.; Calin, M.; Jianu, A.D.; Fecioru, M.

1993-01-01

As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.)

Transformation processes during annealing of Al-amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Petrescu, N. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Petrescu, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Calin, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Jianu, A.D. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) IFTM-Bucharest (Romania)); Fecioru, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) DACIA Enterprise-Bucharest (Romania))

1993-11-01

As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.).

Pressure-induced transformations in amorphous silicon: A computational study

Energy Technology Data Exchange (ETDEWEB)

Garcez, K. M. S., E-mail: kmgarcez@ufma.br [Universidade Federal do Maranhão, 65700-000 Bacabal, Maranhão (Brazil); Antonelli, A., E-mail: aantone@ifi.unicamp.br [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, UNICAMP, 13083-859 Campinas, São Paulo (Brazil)

2014-02-14

We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

Pressure-induced transformations in amorphous silicon: A computational study

Science.gov (United States)

Garcez, K. M. S.; Antonelli, A.

2014-02-01

We study the transformations between amorphous phases of Si through molecular simulations using the environment dependent interatomic potential (EDIP) for Si. Our results show that upon pressure, the material undergoes a transformation from the low density amorphous (LDA) Si to the high density amorphous (HDA) Si. This transformation can be reversed by decompressing the material. This process, however, exhibits clear hysteresis, suggesting that the transformation LDA ↔ HDA is first-order like. The HDA phase is predominantly five-fold coordinated, whereas the LDA phase is the normal tetrahedrally bonded amorphous Si. The HDA phase at 400 K and 20 GPa was submitted to an isobaric annealing up to 800 K, resulting in a denser amorphous phase, which is structurally distinct from the HDA phase. Our results also show that the atomic volume and structure of this new amorphous phase are identical to those of the glass obtained by an isobaric quenching of the liquid in equilibrium at 2000 K and 20 GPa down to 400 K. The similarities between our results and those for amorphous ices suggest that this new phase is the very high density amorphous Si.

Effect of Co content on structure and magnetic behaviors of high induction Fe-based amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Roy, Rajat K., E-mail: rajat@nmlindia.org; Panda, Ashis K.; Mitra, Amitava

2016-11-15

The replacement of Fe with Co is investigated in the (Fe{sub 1−x}Co{sub x}){sub 79}Si{sub 8.5}B{sub 8.5}Nb{sub 3}Cu{sub 1} (x=0, 0.05, 0.2, 0.35, 0.5) amorphous alloys. The alloys are synthesized in the forms of ribbons by single roller melt spinning technique, and the structural and magnetic properties of annealed ribbons are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM), B–H curve tracer, respectively. All as-cast alloys are structurally amorphous, however, their magnetic properties are varying with Co addition. The Co addition within 5–20 at% results in moderate thermal stability, saturation induction, Curie temperature and lowest coercivity, while 35 at% Co causes highest saturation induction, coercivity, Curie temperature and lowest thermal stability. On devitrification, the magnetic properties change with the generation of α-FeCo nanocrystallites and (FeCo){sub 23}B{sub 6}, Fe{sub 2}B phases during primary and secondary crystallization stages, respectively. A small amount Co is advantageous for maintaining finer nanocrystallites in amorphous matrix even after annealing at 600 °C, leading to high saturation magnetization (>1.5 T) and low coercivity (~35 A/m). The improved magnetic properties at elevated temperatures indicate these alloys have a potential for high frequency transformer core applications. - Highlights: • The structural and magnetic behaviors of Fe based amorphous alloys have been investigated with the effect of Co content. • The Co has no adverse effect on amorphization of alloys. • A small amount Co causes the superior improvement of magnetic properties at elevated temperatures. • Therefore, it is important not only for academic research but also for industrial applied research.

Fabrication of amorphous curcumin nanosuspensions using β-lactoglobulin to enhance solubility, stability, and bioavailability.

Science.gov (United States)

Aditya, N P; Yang, Hanjoo; Kim, Saehoon; Ko, Sanghoon

2015-03-01

Curcumin has low aqueous stability and solubility in its native form. It also has a low bioavailability which presents a major barrier to its use in fortifying food products. The aim of this work was to reduce the size of curcumin crystals to the nanoscale and subsequently stabilize them in an amorphous form. To this end, amorphous curcumin nanosuspensions were fabricated using the antisolvent precipitation method with β-lactoglobulin (β-lg) as a stabilizer. The resulting amorphous curcumin nanosuspensions were in the size range of 150-175 nm with unimodal size distribution. The curcumin particles were amorphous and were molecularly dispersed within the β-lg as confirmed by differential scanning calorimetry (DSC) and X-ray diffraction (XRD) studies. The solubility of the amorphous curcumin nanosuspension was enhanced ∼35-fold due to the reduced size and lower crystallinity. Among the formulations, the amorphous curcumin nanosuspensions stabilized with β-lg and prepared at pH 3.4 (β-lg-cur 3.4), showed maximum aqueous stability which was >90% after 30 days. An in vitro study using Caco-2 cell lines showed a significant increase in curcumin bioavailability after stabilization with β-lg. Copyright © 2015 Elsevier B.V. All rights reserved.

Diffusive dynamics during the high-to-low density transition in amorphous ice

Science.gov (United States)

Perakis, Fivos; Amann-Winkel, Katrin; Lehmkühler, Felix; Sprung, Michael; Mariedahl, Daniel; Sellberg, Jonas A.; Pathak, Harshad; Späh, Alexander; Cavalca, Filippo; Schlesinger, Daniel; Ricci, Alessandro; Jain, Avni; Massani, Bernhard; Aubree, Flora; Benmore, Chris J.; Loerting, Thomas; Grübel, Gerhard; Pettersson, Lars G. M.; Nilsson, Anders

2017-08-01

Water exists in high- and low-density amorphous ice forms (HDA and LDA), which could correspond to the glassy states of high- (HDL) and low-density liquid (LDL) in the metastable part of the phase diagram. However, the nature of both the glass transition and the high-to-low-density transition are debated and new experimental evidence is needed. Here we combine wide-angle X-ray scattering (WAXS) with X-ray photon-correlation spectroscopy (XPCS) in the small-angle X-ray scattering (SAXS) geometry to probe both the structural and dynamical properties during the high-to-low-density transition in amorphous ice at 1 bar. By analyzing the structure factor and the radial distribution function, the coexistence of two structurally distinct domains is observed at T = 125 K. XPCS probes the dynamics in momentum space, which in the SAXS geometry reflects structural relaxation on the nanometer length scale. The dynamics of HDA are characterized by a slow component with a large time constant, arising from viscoelastic relaxation and stress release from nanometer-sized heterogeneities. Above 110 K a faster, strongly temperature-dependent component appears, with momentum transfer dependence pointing toward nanoscale diffusion. This dynamical component slows down after transition into the low-density form at 130 K, but remains diffusive. The diffusive character of both the high- and low-density forms is discussed among different interpretations and the results are most consistent with the hypothesis of a liquid-liquid transition in the ultraviscous regime.

High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

International Nuclear Information System (INIS)

Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

1988-01-01

The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

Science.gov (United States)

Morishita, Tetsuya

2009-05-21

We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors

Science.gov (United States)

Lu, Huiling; Zhou, Xiaoliang; Liang, Ting; Zhang, Letao; Zhang, Shengdong

2018-01-01

The photocurrent (IPH) of amorphous InZnO thin film transistors in the off-state is investigated as a function of incident optical power (P). The results show that IPH exhibits a nonlinear dependence on P. Additionally, the dependence of IPH on P exhibits a strong photon energy (hυ)-dependent feature. When P is relatively low, IPH is shown to be proportional to Pγ, where γ is greater than 1. The γ > 1 behavior may be ascribed to the source-barrier-lowering effect due to the accumulation of photo-induced positive charges at the source side. When P is relatively high, while IPH remains proportional to Pγ under the incident light with hυ larger than the optical bandgap (Eg) of a-IZO, it turns to increase at an exponential rate with P if hυ of the incident light is smaller than the Eg. The exponential increase in IPH is attributed to the source-barrier-thinning effect, which leads to a significantly enhanced tunneling current.

High-efficiency amorphous silicon solar cell on a periodic nanocone back reflector

Energy Technology Data Exchange (ETDEWEB)

Hsu, Ching-Mei; Cui, Yi [Department of Materials Science and Engineering, Durand Building, 496 Lomita Mall, Stanford University, Stanford, CA 94305-4034 (United States); Battaglia, Corsin; Pahud, Celine; Haug, Franz-Josef; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue Breguet 2, 2000 Neuchatel (Switzerland); Ruan, Zhichao; Fan, Shanhui [Department of Electrical Engineering, Stanford University (United States)

2012-06-15

An amorphous silicon solar cell on a periodic nanocone back reflector with a high 9.7% initial conversion efficiency is presented. The optimized back-reflector morphology provides powerful light trapping and enables excellent electrical cell performance. Up-scaling to industrial production of large-area modules should be possible using nanoimprint lithography. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Peculiarities of Vibration Characteristics of Amorphous Ices

Science.gov (United States)

Gets, Kirill V.; Subbotin, Oleg S.; Belosludov, Vladimir R.

2012-03-01

Dynamic properties of low (LDA), high (HDA) and very high (VHDA) density amorphous ices were investigated within the approach based on Lattice Dynamics simulations. In this approach, we assume that the short-range molecular order mainly determines the dynamic and thermodynamic properties of amorphous ices. Simulation cell of 512 water molecules with periodical boundary conditions and disordering allows us to study dynamical properties and dispersion curves in the Brillouin zone of pseudo-crystal. Existence of collective phenomena in amorphous ices which is usual for crystals but anomalous for disordered phase was confirmed in our simulations. Molecule amplitudes of delocalized (collective) as well as localized vibrations have been considered.

Inverted amorphous silicon solar cell utilizing cermet layers

Science.gov (United States)

Hanak, Joseph J.

1979-01-01

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Radiation amorphization of materials

International Nuclear Information System (INIS)

Neklyudov, I.M.; Chernyaeva, T.P.

1993-01-01

The results of experimental and theoretical research on radiation amorphization are presented in this analytical review. Mechanism and driving forces of radiation amorphization are described, kinetic and thermodynamic conditions of amorphization are formulated. Compositional criteria of radiation amorphization are presented, that allow to predict irradiation behaviour of materials, their tendency to radiation amorphization. Mechanism of transition from crystalline state to amorphous state are considered depending on dose, temperature, structure of primary radiation damage and flux level. (author). 134 refs., 4 tab., 25 fig

Model for amorphous aggregation processes

Science.gov (United States)

Stranks, Samuel D.; Ecroyd, Heath; van Sluyter, Steven; Waters, Elizabeth J.; Carver, John A.; von Smekal, Lorenz

2009-11-01

The amorphous aggregation of proteins is associated with many phenomena, ranging from the formation of protein wine haze to the development of cataract in the eye lens and the precipitation of recombinant proteins during their expression and purification. While much literature exists describing models for linear protein aggregation, such as amyloid fibril formation, there are few reports of models which address amorphous aggregation. Here, we propose a model to describe the amorphous aggregation of proteins which is also more widely applicable to other situations where a similar process occurs, such as in the formation of colloids and nanoclusters. As first applications of the model, we have tested it against experimental turbidimetry data of three proteins relevant to the wine industry and biochemistry, namely, thaumatin, a thaumatinlike protein, and α -lactalbumin. The model is very robust and describes amorphous experimental data to a high degree of accuracy. Details about the aggregation process, such as shape parameters of the aggregates and rate constants, can also be extracted.

Methods of amorphization and investigation of the amorphous state

OpenAIRE

EINFALT, TOMAŽ; PLANINŠEK, ODON; HROVAT, KLEMEN

2013-01-01

The amorphous form of pharmaceutical materials represents the most energetic solid state of a material. It provides advantages in terms of dissolution rate and bioavailability. This review presents the methods of solid-state amorphization described in literature (supercooling of liquids, milling, lyophilization, spray drying, dehydration of crystalline hydrates), with the emphasis on milling. Furthermore, we describe how amorphous state of pharmaceuticals differ depending on method of prepara...

Effect of radiation-induced amorphization on smectite dissolution.

Science.gov (United States)

Fourdrin, C; Allard, T; Monnet, I; Menguy, N; Benedetti, M; Calas, G

2010-04-01

Effects of radiation-induced amorphization of smectite were investigated using artificial irradiation. Beams of 925 MeV Xenon ions with radiation dose reaching 73 MGy were used to simulate the effects generated by alpha recoil nuclei or fission products in the context of high level nuclear waste repository. Amorphization was controlled by X-ray diffraction, transmission electron microscopy, and Fourier transform infrared spectroscopy. An important coalescence of the smectite sheets was observed which lead to a loss of interparticle porosity. The amorphization is revealed by a loss of long-range structure and accompanied by dehydroxylation. The dissolution rate far-from-equilibrium shows that the amount of silica in solution is two times larger in the amorphous sample than in the reference clay, a value which may be enhanced by orders of magnitude when considering the relative surface area of the samples. Irradiation-induced amorphization thus facilitates dissolution of the clay-derived material. This has to be taken into account for the safety assessment of high level nuclear waste repository, particularly in a scenario of leakage of the waste package which would deliver alpha emitters able to amorphize smectite after a limited period of time.

High-resolution transmission electron microscopy of grain-refining particles in amorphous aluminum alloys

International Nuclear Information System (INIS)

Schumacher, P.; Greer, A.L.

1996-01-01

The nucleation mechanism of Al-Ti-B grain refiners is studied in an Al-based amorphous alloy. The ability to limit growth of α-Al in the amorphous alloy permits the microscopical observation of nucleation events on boride particles. Earlier studies of this kind are extended by using high-resolution electron microscopy. This shows that the efficient nucleation α-Al depends on the TiB 2 particles being coated with a thin layer of Al 3 Ti, which can form only when there is some excess titanium in the melt. The aluminide layer, stabilized by adsorption effects, can be as little as a few monolayers thick, and is coherent with the boride. The nature of this layer, and its importance for the nucleation mechanism are discussed. The fading of the grain refinement action is also considered

Emerging trends in the stabilization of amorphous drugs.

Science.gov (United States)

Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J; Grohganz, Holger; Rades, Thomas

2013-08-30

The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative methods to amorphous polymer dispersions for stabilizing the amorphous form of drugs. First, an overview of the properties and stabilization mechanisms of amorphous forms is provided. Subsequently, formulation approaches such as the preparation of co-amorphous small-molecule mixtures and the use of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals. Copyright © 2012 Elsevier B.V. All rights reserved.

Application of diffusion barriers to high modulus fibers

Science.gov (United States)

Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

1977-01-01

Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

Pseudocapacitance of amorphous TiO2@nitrogen doped graphene composite for high rate lithium storage

International Nuclear Information System (INIS)

Li, Sheng; Xue, Pan; Lai, Chao; Qiu, Jingxia; Ling, Min; Zhang, Shanqing

2015-01-01

The high rate applications such as electric vehicles of the traditional lithium ion batteries (LIBs) are commonly limited by their insufficient electron conductivity and slow mass transport of lithium ions in bulk electrode materials. In order to address these issues, in this work, a simple and up-scalable wet-mechanochemical (wet-ball milling) route has been developed for fabrication of amorphous porous TiO 2 @nitrogen doped graphene (TiO 2 @N-G) nanocomposites. The amorphous phase, unique porous structure of TiO 2 and the surface defects from nitrogen doping to graphene planes have incurred surface controlled reactions, contributing pseudocapacitance to the total capacity of the battery. It plays a dominant role in producing outstanding high rate electrochemical performance, e.g., 182.7 mAh/g (at 3.36 A/g) after 100 cycles. The design and synthesis of electrode materials with enhanced conductivity and surface pseudocapacitance can be a promising way for high rate LIBs.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

International Nuclear Information System (INIS)

Shpotyuk, O.

1997-01-01

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

The Structure of Liquid and Amorphous Hafnia

Directory of Open Access Journals (Sweden)

Leighanne C. Gallington

2017-11-01

Full Text Available Understanding the atomic structure of amorphous solids is important in predicting and tuning their macroscopic behavior. Here, we use a combination of high-energy X-ray diffraction, neutron diffraction, and molecular dynamics simulations to benchmark the atomic interactions in the high temperature stable liquid and low-density amorphous solid states of hafnia. The diffraction results reveal an average Hf–O coordination number of ~7 exists in both the liquid and amorphous nanoparticle forms studied. The measured pair distribution functions are compared to those generated from several simulation models in the literature. We have also performed ab initio and classical molecular dynamics simulations that show density has a strong effect on the polyhedral connectivity. The liquid shows a broad distribution of Hf–Hf interactions, while the formation of low-density amorphous nanoclusters can reproduce the sharp split peak in the Hf–Hf partial pair distribution function observed in experiment. The agglomeration of amorphous nanoparticles condensed from the gas phase is associated with the formation of both edge-sharing and corner-sharing HfO6,7 polyhedra resembling that observed in the monoclinic phase.

Salt Fog Testing Iron-Based Amorphous Alloys

International Nuclear Information System (INIS)

Rebak, Raul B.; Aprigliano, Louis F.; Day, S. Daniel; Farmer, Joseph C.

2007-01-01

Iron-based amorphous alloys are hard and highly corrosion resistant, which make them desirable for salt water and other applications. These alloys can be produced as powder and can be deposited as coatings on any surface that needs to be protected from the environment. It was of interest to examine the behavior of these amorphous alloys in the standard salt-fog testing ASTM B 117. Three different amorphous coating compositions were deposited on 316L SS coupons and exposed for many cycles of the salt fog test. Other common engineering alloys such as 1018 carbon steel, 316L SS and Hastelloy C-22 were also tested together with the amorphous coatings. Results show that amorphous coatings are resistant to rusting in salt fog. Partial devitrification may be responsible for isolated rust spots in one of the coatings. (authors)

Calculation of core loss and copper loss in amorphous/nanocrystalline core-based high-frequency transformer

Directory of Open Access Journals (Sweden)

Xiaojing Liu

2016-05-01

Full Text Available Amorphous and nanocrystalline alloys are now widely used for the cores of high-frequency transformers, and Litz-wire is commonly used as the windings, while it is difficult to calculate the resistance accurately. In order to design a high-frequency transformer, it is important to accurately calculate the core loss and copper loss. To calculate the core loss accurately, the additional core loss by the effect of end stripe should be considered. It is difficult to simulate the whole stripes in the core due to the limit of computation, so a scale down model with 5 stripes of amorphous alloy is simulated by the 2D finite element method (FEM. An analytical model is presented to calculate the copper loss in the Litz-wire, and the results are compared with the calculations by FEM.

High throughput deposition of hydrogenated amorphous carbon coatings on rubber with expanding thermal plasma

NARCIS (Netherlands)

Pei, Y.T.; Eivani, A.R.; Zaharia, T.; Kazantis, A.V.; Sanden, van de M.C.M.; De Hosson, J.T.M.

2014-01-01

Flexible hydrogenated amorphous carbon (a-C:H) thin film coated on rubbers has shown outstanding protection of rubber seals from friction and wear. This work concentrates on the potential advances of expanding thermal plasma (ETP) process for a high throughput deposition of a-C:H thin films in

Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

Science.gov (United States)

Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

2017-02-10

We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Science.gov (United States)

Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

2018-04-01

Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

Theory of amorphous ices.

Science.gov (United States)

Limmer, David T; Chandler, David

2014-07-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

1997-12-31

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

Synthesis and high temperature stability of amorphous Si(B)CN-MWCNT composite nanowires

Science.gov (United States)

Bhandavat, Romil; Singh, Gurpreet

2012-02-01

We demonstrate synthesis of a hybrid nanowire structure consisting of an amorphous polymer-derived silicon boron-carbonitride (Si-B-C-N) shell with a multiwalled carbon nanotube core. This was achieved through a novel process involving preparation of a boron-modified liquid polymeric precursor through a reaction of trimethyl borate and polyureasilazane under atmospheric conditions; followed by conversion of polymer to glass-ceramic on carbon nanotube surfaces through controlled heating. Chemical structure of the polymer was studied by liquid-NMR while evolution of various ceramic phases was studied by Raman spectroscopy, solid-NMR, Fourier transform infrared and X-ray photoelectron spectroscopy. Electron microscopy and X-ray diffraction confirms presence of amorphous Si(B)CN coating on individual nanotubes for all specimen processed below 1400 degree C. Thermogravimetric analysis, followed by TEM revealed high temperature stability of the carbon nanotube core in flowing air up to 1300 degree C.

Laser spot welding of cobalt-based amorphous metal foils

International Nuclear Information System (INIS)

Runchev, Dobre; Dorn, Lutc; Jaferi, Seifolah; Purbst, Detler

1997-01-01

The results concerning weldability of amorphous alloy (VAC 6025F) in shape of foils and the quality of laser-spot welded joints are presented in this paper. The aim of the research was the production of a high quality welding joint, by preserving the amorphous structure. The quality of the joint was tested by shear strength analysis and microhardness measuring. The metallographic studies were made by using optical microscope and SEM. The results show that (1) overlapped Co based amorphous metals foils can be welded with high-quality by a pulsed Nd: YAG-Laser, but only within a very narrow laser parameter window; (2) the laser welded spots show comparably high strength as the basic material; (3) the structure of the welded spot remains amorphous, so that the same characteristics as the base material can be achieved. (author)

Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

Directory of Open Access Journals (Sweden)

Jiyoon Nam

2016-01-01

Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

Poole-Frenkel behavior in amorphous oxide thin-film transistors prepared on SiOC

International Nuclear Information System (INIS)

Oh, Teresa

2014-01-01

The electron behavior in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) depends on the polar characteristics of SiOC, which is used as a gate dielectric. The properties of the interface between the semiconductor and SiOC were defined by using a Schottky contact with a low potential barrier and Poole-Frenkel contacts with a high potential barrier. The leakage current of SiOC, which was used as a gate insulator, decreased at the Poole-Frenkel contacts because of the high potential barrier. The ambipolar properties in the field effect transistor were observed to depend on the various characteristics of SiOC, which ranged from its behaving as an ideal insulator or as a material with a high dielectric constant. The resistance of the a-IGZO channel changed from positive to negative at SiOC, which had the lowest polarity. As to the conduction due to the diffusion current, the mobility increased with increasing carrier concentrations. However, the drift carrier conduction was related to the reduced mobility at higher carrier concentrations. The performance of the transistors was enhanced by the tunneling and the diffusion currents Rather than by the drift current caused by trapping. The Schottky contact and the Poole-Frenkel (PF) contacts at an interface between the IGZO channel and the SiOC were defined according to the heights of potential barriers caused by the depletion layer. The leakage current was very low about 10 -12 A at SiOC with PF contacts because of the height of potential barrier was double that with a Schottky contact because the tunneling conductance due to the diffusion current originated from the PF contacts of non-polar SiOC.

Poole-Frenkel behavior in amorphous oxide thin-film transistors prepared on SiOC

Energy Technology Data Exchange (ETDEWEB)

Oh, Teresa [Cheongju University, Cheongju (Korea, Republic of)

2014-05-15

The electron behavior in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) depends on the polar characteristics of SiOC, which is used as a gate dielectric. The properties of the interface between the semiconductor and SiOC were defined by using a Schottky contact with a low potential barrier and Poole-Frenkel contacts with a high potential barrier. The leakage current of SiOC, which was used as a gate insulator, decreased at the Poole-Frenkel contacts because of the high potential barrier. The ambipolar properties in the field effect transistor were observed to depend on the various characteristics of SiOC, which ranged from its behaving as an ideal insulator or as a material with a high dielectric constant. The resistance of the a-IGZO channel changed from positive to negative at SiOC, which had the lowest polarity. As to the conduction due to the diffusion current, the mobility increased with increasing carrier concentrations. However, the drift carrier conduction was related to the reduced mobility at higher carrier concentrations. The performance of the transistors was enhanced by the tunneling and the diffusion currents Rather than by the drift current caused by trapping. The Schottky contact and the Poole-Frenkel (PF) contacts at an interface between the IGZO channel and the SiOC were defined according to the heights of potential barriers caused by the depletion layer. The leakage current was very low about 10{sup -12} A at SiOC with PF contacts because of the height of potential barrier was double that with a Schottky contact because the tunneling conductance due to the diffusion current originated from the PF contacts of non-polar SiOC.

Fe-based bulk amorphous alloys with iron contents as high as 82 at%

Energy Technology Data Exchange (ETDEWEB)

Li, Jin-Feng; Liu, Xue; Zhao, Shao-Fan; Ding, Hong-Yu [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Yao, Ke-Fu, E-mail: kfyao@tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2015-07-15

Fe-based bulk amorphous alloys (BAAs) with high Fe contents are advantageous due to their high saturation magnetization and low cost. However, preparing Fe-based BAAs with Fe contents higher than 80 at% is difficult due to their poor glass forming abilities (GFA). In this study, an Fe{sub 81}P{sub 8.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA with a diameter of 1 mm and a saturation magnetization of 1.56 T was successfully prepared using the fluxing and copper mold casting methods. In addition, by introducing a small amount of elemental Mo to the alloy, an Fe{sub 82}Mo{sub 1}P{sub 6.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA rod with a diameter of 1 mm, a high saturation magnetization of 1.59 T, a high yield stress of 3265 MPa, and a clear plasticity of 1.3% was prepared in the same way. The cost effectiveness and good magnetic properties of these newly-developed Fe-based BAAs with Fe contents as high as 82 at% would be advantageous and promising for industrial applications. - Highlights: • Novel Fe-based BAA with no other metallic element except 81 at% Fe was prepared. • Fe-based bulk amorphous alloy (BAA) with the highest Fe content (82%) was prepared. • Very high saturation magnetization of 1.59 T has been achieved. • A new thought for designing Fe-based BAA with high Fe content was provided.

Electronic sputtering by swift highly charged ions of nitrogen on amorphous carbon

International Nuclear Information System (INIS)

Caron, M.; Haranger, F.; Rothard, H.; Ban d'Etat, B.; Boduch, P.; Clouvas, A.; Potiriadis, C.; Neugebauer, R.; Jalowy, T.

2001-01-01

Electronic sputtering with heavy ions as a function of both electronic energy loss dE/dx and projectile charge state q was studied at the French heavy ion accelerator GANIL. Amorphous carbon (untreated, and sputter-cleaned and subsequently exposed to nitrogen) was irradiated with swift highly charged ions (Z=6-73, q=6-54, energy 6-13 MeV/u) in an ultrahigh vacuum scattering chamber. The fluence dependence of ion-induced electron yields allows to deduce a desorption cross-section σ which varies approximately as σ∼(dE/dx) 1.65 or σ∼q 3.3 for sputter-cleaned amorphous carbon exposed to nitrogen. This q dependence is close to the cubic charge dependence observed for the emission of H + secondary ions which are believed to be emitted from the very surface. However, the power law σ∼(dE/dx) 1.65 , related to the electronic energy loss gives the best empirical description. The dependence on dE/dx is close to a quadratic one thus rather pointing towards a thermal evaporation-like effect

Stabilization of iron and molybdenum amorphous state with interstitials under high rates of cooling

International Nuclear Information System (INIS)

Barmin, Yu.V.; Vavilova, V.V.; Verevkin, A.G.; Gertsen, A.T.; Kovneristyj, Yu.K.; Kotyurgin, E.A.; Mirkin, B.V.; Palij, N.A.

1993-01-01

Amorphous solidification of iron and molybdenum is investigated in thin films and on surface laser irradiated on air at 10 12 and 10 8 /Ks cooling rates correspondingly. Amorphous solidification occurs during ion plasma spraying in thin films of 50 nm at saturation of carbon and oxygen atoms in the ratio of C:0=2.3, but amorphous state is absent at room temperature. Metastable fcc phase, among bcc, is formed by crystallization

Mechanical response of melt-spun amorphous filaments

International Nuclear Information System (INIS)

Leal, A A; Reifler, F A; Hufenus, R; Mohanty, G; Michler, J

2014-01-01

High-speed melt spinning of a cyclo-olefin polymer (COP) and a copolyamide (CoPA) have been performed. Differential scanning calorimetry curves of the resulting monofilaments show that they remain in an amorphous state even after hot drawing. Wide angle x-ray diffraction patterns of undrawn and drawn COP filaments show that although the material remains in an amorphous state, a degree of orientation is induced in the polymer after drawing. The amorphous filaments show an enhanced bending recovery with respect to different semi-crystalline monofilaments commercially available. However, single fiber axial compressive testing indicates that the amorphous filaments exhibit a compressive modulus value which is 50% lower than what is observed for a reference semi-crystalline PET filament. Analysis of the compressive strains applied by the bending recovery test indicates that while the maximum applied strains remain well within the region of elastic deformation of the amorphous materials, the threshold between elastic and plastic deformation is reached for the semi-crystalline materials. (paper)

Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

Science.gov (United States)

Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

2016-05-03

A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

Highly conductive p-type amorphous oxides from low-temperature solution processing

International Nuclear Information System (INIS)

Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

2012-01-01

We report solution-processed, highly conductive (resistivity 1.3-3.8 mΩ cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 °C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E VBM = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

Amorphous-like interfacial layer between a high-Tc superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

International Nuclear Information System (INIS)

Kim, Bongjun; Kim, Hyuntak; Nagai, Takuro; Matsui, Yoshio; Horiuchi, Shigeo; Jeong, Daeyeong; Deinhofer, Christian; Gritzner, Gerhard; Kim, Youngmin; Kim, Younjoong

2006-01-01

The thin amorphous-like layer, formed at the interface between a high-T c superconducting (Tl 0.5 , Pb 0.5 )(Sr 0.8 , Ba 0.2 )Ca 2 Cu 3 O y (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO 2 + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

Amorphization kinetics of Zr3Fe under electron irradiation

International Nuclear Information System (INIS)

Motta, A.T.; Howe, L.M.; Okamoto, P.R.

1992-10-01

0.9 MeV electron irradiations were performed at 28--220 K in a high-voltage electron microscope (HVEM). By measuring onset, spread and final size of the amorphous region, factoring in the Guassian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼220 K, compared to 570--625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the does-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a region dose, the final size decreasing with increasing temperature, and it was argued that this is related to the existence of a critical dose rate, which increased with temperature, below which no amorphization occurred. The above observations can be understood in the framework of the kinetics of damage accumulation under irradiation

Oxygen Barrier Properties and Melt Crystallization Behavior of Poly(ethylene terephthalate)/Graphene Oxide Nanocomposites

OpenAIRE

Szymczyk, Anna; Paszkiewicz, Sandra; Pawelec, Iwona; Lisiecki, Slawomir; Jotko, Marek; Spitalsky, Zdenko; Mosnácek, Jaroslav; Roslaniec, Zbigniew

2015-01-01

Poly(ethylene terephthalate) nanocomposites with low loading (0.1–0.5 wt%) of graphene oxide (GO) have been prepared by using in situ polymerization method. TEM study of nanocomposites morphology has shown uniform distribution of highly exfoliated graphene oxide nanoplatelets in PET matrix. Investigations of oxygen permeability of amorphous films of nanocomposites showed that the nanocomposites had better oxygen barrier properties than the neat PET. The improvement of oxygen permeability for ...

Using containerless methods to develop amorphous pharmaceuticals.

Science.gov (United States)

Weber, J K R; Benmore, C J; Suthar, K J; Tamalonis, A J; Alderman, O L G; Sendelbach, S; Kondev, V; Yarger, J; Rey, C A; Byrn, S R

2017-01-01

Many pipeline drugs have low solubility in their crystalline state and require compounding in special dosage forms to increase bioavailability for oral administration. The use of amorphous formulations increases solubility and uptake of active pharmaceutical ingredients. These forms are rapidly gaining commercial importance for both pre-clinical and clinical use. Synthesis of amorphous drugs was performed using an acoustic levitation containerless processing method and spray drying. The structure of the products was investigated using in-situ high energy X-ray diffraction. Selected solvents for processing drugs were investigated using acoustic levitation. The stability of amorphous samples was measured using X-ray diffraction. Samples processed using both spray drying and containerless synthesis were compared. We review methods for making amorphous pharmaceuticals and present data on materials made by containerless processing and spray drying. It was shown that containerless processing using acoustic levitation can be used to make phase-pure forms of drugs that are known to be difficult to amorphize. The stability and structure of the materials was investigated in the context of developing and making clinically useful formulations. Amorphous compounds are emerging as an important component of drug development and for the oral delivery of drugs with low solubility. Containerless techniques can be used to efficiently synthesize small quantities of pure amorphous forms that are potentially useful in pre-clinical trials and for use in the optimization of clinical products. Developing new pharmaceutical products is an essential enterprise to improve patient outcomes. The development and application of amorphous pharmaceuticals to increase absorption is rapidly gaining importance and it provides opportunities for breakthrough research on new drugs. There is an urgent need to solve problems associated with making formulations that are both stable and that provide high

Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

International Nuclear Information System (INIS)

Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

2001-01-01

Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

Amorphous nanophotonics

CERN Document Server

Scharf, Toralf

2013-01-01

This book represents the first comprehensive overview over amorphous nano-optical and nano-photonic systems. Nanophotonics is a burgeoning branch of optics that enables many applications by steering the mould of light on length scales smaller than the wavelength with devoted nanostructures. Amorphous nanophotonics exploits self-organization mechanisms based on bottom-up approaches to fabricate nanooptical systems. The resulting structures presented in the book are characterized by a deterministic unit cell with tailored geometries; but their spatial arrangement is not controlled. Instead of periodic, the structures appear either amorphous or random. The aim of this book is to discuss all aspects related to observable effects in amorphous nanophotonic material and aspects related to their design, fabrication, characterization and integration into applications. The book has an interdisciplinary nature with contributions from scientists in physics, chemistry and materials sciences and sheds light on the topic fr...

Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

International Nuclear Information System (INIS)

Kalay, Yunus Eren

2008-01-01

Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T 0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T 0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 (micro)m with a Peclet number of ∼0.2, JH and TMK deviate from each other. This

Unipolar time-differential charge sensing in non-dispersive amorphous solids

International Nuclear Information System (INIS)

Goldan, A. H.; Rowlands, J. A.; Tousignant, O.; Karim, K. S.

2013-01-01

The use of high resistivity amorphous solids as photodetectors, especially amorphous selenium, is currently of great interest because they are readily produced over large area at substantially lower cost compared to grown crystalline solids. However, amorphous solids have been ruled out as viable radiation detection media for high frame-rate applications, such as single-photon-counting imaging, because of low carrier mobilities, transit-time-limited photoresponse, and consequently, poor time resolution. To circumvent the problem of poor charge transport in amorphous solids, we propose unipolar time-differential charge sensing by establishing a strong near-field effect using an electrostatic shield within the material. For the first time, we have fabricated a true Frisch grid inside a solid-state detector by evaporating amorphous selenium over photolithographically prepared multi-well substrates. The fabricated devices are characterized with optical, x-ray, and gamma-ray impulse-like excitations. Results prove the proposed unipolar time-differential property and show that time resolution in non-dispersive amorphous solids can be improved substantially to reach the theoretical limit set by spatial spreading of the collected Gaussian carrier cloud.

Amorphization kinetics of Zr3Fe under electron irradiation

International Nuclear Information System (INIS)

Motta, A.T.; Howe, L.M.; Okamoto, P.R.

1994-11-01

Previous investigations using 40 Ar ion bombardments have revealed that Zr 3 Fe, which has an orthorhombic crystal structure, undergoes an irradiation-induced transformation from the crystalline to the amorphous state. In the present investigation, 0.9 MeV electron irradiations were performed at 28 - 220 K in a high-voltage electron microscope (HVEM). By measuring the onset, spread and final size of the amorphous region, factoring in the Gaussian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼ 220 K, compared with 570 - 625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the dose-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a given dose, the final size decreasing with increasing temperature, and it is argued that this is related to the existence of a critical dose rate, which increases with temperature, and below which no amorphization occurs. (author). 26 refs., 6 figs

Amorphization of metals by ion implantation and ion beam mixing

International Nuclear Information System (INIS)

Rauschenbach, B.; Heera, V.

1988-01-01

Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

Neutron irradiation and high temperature effects on amorphous Fe-based nano-coatings on steel - A macroscopic assessment

Science.gov (United States)

Simos, N.; Zhong, Z.; Dooryhee, E.; Ghose, S.; Gill, S.; Camino, F.; Şavklıyıldız, İ.; Akdoğan, E. K.

2017-06-01

The study revealed that loss of ductility in an amorphous Fe-alloy coating on a steel substrate composite structure was essentially prevented from occurring, following radiation with modest neutron doses of ∼2 × 1018 n/cm2. At the higher neutron dose of ∼2 × 1019, macroscopic stress-strain analysis showed that the amorphous Fe-alloy nanostructured coating, while still amorphous, experienced radiation-induced embrittlement, no longer offering protection against ductility loss in the coating-substrate composite structure. Neutron irradiation in a corrosive environment revealed exemplary oxidation/corrosion resistance of the amorphous Fe-alloy coating, which is attributed to the formation of the Fe2B phase in the coating. To establish the impact of elevated temperatures on the amorphous-to-crystalline transition in the amorphous Fe-alloy, electron microscopy was carried out which confirmed the radiation-induced suppression of crystallization in the amorphous Fe-alloy nanostructured coating.

Facile synthesis of highly efficient amorphous Mn-MIL-100 catalysts: The formation mechanism and the structure changes during the application for CO oxidation.

Science.gov (United States)

Zhang, Xiaodong; Li, Hongxin; Lv, Xutian; Xu, Jingcheng; Wang, Yuxin; He, Chi; Liu, Ning; Yang, Yiqiong; Wang, Yin

2018-04-13

A comprehensive study was carried out on amorphous metal-organic frameworks Mn-MIL-100 as efficient catalysts towards CO oxidation. This study focuses on explaining the crystalline-amorphous-crystalline transformations during thermolysis process of Mn-MIL-100 and studying the structure changes during the reaction process for CO oxidation. A possible formation mechanism of amorphous Mn-MIL-100 was proposed. Amorphous Mn-MIL-100 obtained by calcination at 250°C (a-Mn-250) showed a smaller specific surface area (4 m2/g), but displayed a high catalytic activity. Furthermore, the structure of amorphous Mn-MIL-100 was labile during the reaction process. When used a-Mn-250 were treated with reaction atmosphere at high temperature (named used a-Mn-250-S), the amorphous catalysts transformed to Mn2O3. Meanwhile, BET surface area (164 m2/g) and the catalytic performance both sharply increased. In addition, used a-Mn-250-S catalyst transformed from Mn2O3 to Mn3O4, resulting in the slightly decrease of catalytic activity under the presence of 1 vol% water vapor in the stream. A schematic of the structure changes during the reaction process was proposed. The achievement of our synthesis relies on the increase of BET surface area using CO as retreatment atmosphere, and the enhanced catalytic activity was attributed to the unique structure, a high quantity of surface active oxygen species, oxygen vacancies and good low temperature reduction behavior. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wear Resistant Amorphous and Nanocomposite Coatings

Energy Technology Data Exchange (ETDEWEB)

Racek, O

2008-03-26

Glass forming materials (critical cooling rate <10{sup 4}K.s{sup -1}) are promising for their high corrosion and wear resistance. During rapid cooling, the materials form an amorphous structure that transforms to nanocrystalline during a process of devitrification. High hardness (HV 1690) can be achieved through a controlled crystallization. Thermal spray process has been used to apply coatings, which preserves the amorphous/nanocomposite structure due to a high cooling rate of the feedstock particles during the impact on a substrate. Wear properties have been studied with respect to process conditions and feedstock material properties. Application specific properties such as sliding wear resistance have been correlated with laboratory tests based on instrumented indentation and scratch tests.

Atomistic modeling of ion beam induced amorphization in silicon

International Nuclear Information System (INIS)

Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

2005-01-01

Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

NARCIS (Netherlands)

Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

2006-01-01

We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

Amorphous and Nanocomposite Materials for Energy-Efficient Electric Motors

Science.gov (United States)

Silveyra, Josefina M.; Xu, Patricia; Keylin, Vladimir; DeGeorge, Vincent; Leary, Alex; McHenry, Michael E.

2016-01-01

We explore amorphous soft-magnetic alloys as candidates for electric motor applications. The Co-rich system combines the benefits of low hysteretic and eddy-current losses while exhibiting negligible magnetostriction and robust mechanical properties. The amorphous precursors can be devitrified to form nanocomposite magnets. The superior characteristics of these materials offer the advantages of ease of handling in the manufacturing processing and low iron losses during motor operation. Co-rich amorphous ribbons were laser-cut to build a stator for a small demonstrator permanent-magnet machine. The motor was tested up to ~30,000 rpm. Finite-element analyses proved that the iron losses of the Co-rich amorphous stator were ~80% smaller than for a Si steel stator in the same motor, at 18,000 rpm (equivalent to an electric frequency of 2.1 kHz). These low-loss soft magnets have great potential for application in highly efficient high-speed electric machines, leading to size reduction as well as reduction or replacement of rare earths in permanent-magnet motors. More studies evaluating further processing techniques for amorphous and nanocomposite materials are needed.

Amorphizing of Cu Nanoparticles toward Highly Efficient and Robust Electrocatalyst for CO2 Reduction to Liquid Fuels with High Faradaic Efficiencies.

Science.gov (United States)

Duan, Yan-Xin; Meng, Fan-Lu; Liu, Kai-Hua; Yi, Sha-Sha; Li, Si-Jia; Yan, Jun-Min; Jiang, Qing

2018-04-01

Conversion of carbon dioxide (CO 2 ) into valuable chemicals, especially liquid fuels, through electrochemical reduction driven by sustainable energy sources, is a promising way to get rid of dependence on fossil fuels, wherein developing of highly efficient catalyst is still of paramount importance. In this study, as a proof-of-concept experiment, first a facile while very effective protocol is proposed to synthesize amorphous Cu NPs. Unexpectedly, superior electrochemical performances, including high catalytic activity and selectivity of CO 2 reduction to liquid fuels are achieved, that is, a total Faradaic efficiency of liquid fuels can sum up to the maximum value of 59% at -1.4 V, with formic acid (HCOOH) and ethanol (C 2 H 6 O) account for 37% and 22%, respectively, as well as a desirable long-term stability even up to 12 h. More importantly, this work opens a new avenue for improved electroreduction of CO 2 based on amorphous metal catalysts. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphization Mechanism of Icosahedral Platinum Clusters

International Nuclear Information System (INIS)

Apra, Edoardo; Baletto, Francesca; Ferrando, Riccardo; Fortunelli, Alessandro

2004-01-01

The amorphization mechanism of high-symmetry pt nanoclusters is investigated by a combination of Molecular Dynamics simulations and Density Functional calculations. A general mechanism for amorphization, involving rosette-like structural transformations at fivefold vertices, is proposed. IN the tosette, a fivefold vertex is transformed into a hexagonal ring. We show that for icosahedral Pt nanoclusters, this transformation is associated with an energy gain, so that their most favorable structures have a low symmetry even at icosahedral magic numbers

Solubility of crystalline organic compounds in high and low molecular weight amorphous matrices above and below the glass transition by zero enthalpy extrapolation.

Science.gov (United States)

Amharar, Youness; Curtin, Vincent; Gallagher, Kieran H; Healy, Anne Marie

2014-09-10

Pharmaceutical applications which require knowledge of the solubility of a crystalline compound in an amorphous matrix are abundant in the literature. Several methods that allow the determination of such data have been reported, but so far have only been applicable to amorphous polymers above the glass transition of the resulting composites. The current work presents, for the first time, a reliable method for the determination of the solubility of crystalline pharmaceutical compounds in high and low molecular weight amorphous matrices at the glass transition and at room temperature (i.e. below the glass transition temperature), respectively. The solubilities of mannitol and indomethacin in polyvinyl pyrrolidone (PVP) K15 and PVP K25, respectively were measured at different temperatures. Mixtures of undissolved crystalline solute and saturated amorphous phase were obtained by annealing at a given temperature. The solubility at this temperature was then obtained by measuring the melting enthalpy of the crystalline phase, plotting it as a function of composition and extrapolating to zero enthalpy. This new method yielded results in accordance with the predictions reported in the literature. The method was also adapted for the measurement of the solubility of crystalline low molecular weight excipients in amorphous active pharmaceutical ingredients (APIs). The solubility of mannitol, glutaric acid and adipic acid in both indomethacin and sulfadimidine was experimentally determined and successfully compared with the difference between their respective calculated Hildebrand solubility parameters. As expected from the calculations, the dicarboxylic acids exhibited a high solubility in both amorphous indomethacin and sulfadimidine, whereas mannitol was almost insoluble in the same amorphous phases at room temperature. This work constitutes the first report of the methodology for determining an experimentally measured solubility for a low molecular weight crystalline solute

Amorphization of C-implanted Fe(Cr) alloys

International Nuclear Information System (INIS)

Knapp, J.A.; Follstaedt, D.M.; Sorensen, N.R.; Pope, L.E.

1991-01-01

The amorphous phase formed by implanting C into Fe alloyed with Cr, which is a prototype for the amorphous phase formed by implanting C into stainless steels, is compared to that formed by implanting C and Ti into Fe and steels. The composition range of the phase has been examined; higher Cr and C concentrations are required than needed with Ti and C. The friction and wear benefits obtained by implanting stainless steels with C only do not persist for the long durations and high wear loads found with Ti and C. However, the amorphous Fe-Cr-C alloys exhibit good aqueous corrosion resistance. (orig.)

Structure of a new dense amorphous ice

International Nuclear Information System (INIS)

Finney, J.L.; Bowron, D.T.; Soper, A.K.; Loerting, T.; Mayer, E.; Hallbrucker, A.

2002-01-01

The detailed structure of a new dense amorphous ice, VHDA, is determined by isotope substitution neutron diffraction. Its structure is characterized by a doubled occupancy of the stabilizing interstitial location that was found in high density amorphous ice, HDA. As would be expected for a thermally activated unlocking of the stabilizing 'interstitial', the transition from VHDA to LDA (low-density amorphous ice) is very sharp. Although its higher density makes VHDA a better candidate than HDA for a physical manifestation of the second putative liquid phase of water, as for the HDA case, the VHDA to LDA transition also appears to be kinetically controlled

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

Science.gov (United States)

Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

2017-12-01

Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hollow Amorphous MnSnO3 Nanohybrid with Nitrogen-Doped Graphene for High-Performance Lithium Storage

International Nuclear Information System (INIS)

Liu, Peng; Hao, Qingli; Xia, Xifeng; Lei, Wu; Xia, Hui; Chen, Ziyang; Wang, Xin

2016-01-01

Graphical abstract: A novel hybrid of hollow amorphous MnSnO 3 nanoparticles and nitrogen-doped reduced graphene oxide was fabricated. The unique structure and well-combination of both components account for the ultra long-term cyclic life with high reversible capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . - Highlights: • Novel hybrid of MnSnO 3 and nitrogen-doped reduced graphene oxide was fabricated. • The MnSnO 3 nanoparticles possess amorphous and hollow structure in the composite. • The excellent electrochemical performance benefits from unique nanostructure. • The reversible capacity of as-prepared hybrid is 610 mAh g −1 after 1000 cycles. • A long-term life with 97.3% capacity retention over 1000 cycles was obtained. - Abstract: Tin-based metal oxides usually suffer from severe capacity fading resulting from aggregation and considerable volume variation during the charge/discharge process in lithium ion batteries. In this work, a novel nanocomposite (MTO/N-RGO) of hollow amorphous MnSnO 3 (MTO) nanoparticles and nitrogen-doped reduced graphene oxide (N-RGO) has been designed and synthesized by a two-step method. Firstly, the nitrogen-doped graphene nanocomposite (MTO/N-RGO-P) with MnSn(OH) 6 crystal nanoparticles was synthesized by a facile solvothermal method. Subsequently, the MTO/N-RGO nanocomposite was obtained through the post heat treatment of MTO/N-RGO-P. The designed heterostructure and well-combination of the hollow amorphous MTO and N-RGO matrix can accelerate the ionic and electronic transport, and simultaneously accommodate the aggregation and volume variation of MTO nanoparticles during the lithiation–delithiation cycles. The as-prepared hybrid of MTO and N-RGO (MTO/N-RGO) exhibits a high reversible capacity of 707 mAh g −1 after 110 cycles at 200 mA g −1 , superior rate capability, and long-term cyclic life with high capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . Superior capacity retention of

Amorphous Alloy: Promising Precursor to Form Nanoflowerpot

Directory of Open Access Journals (Sweden)

Guo Lan

2014-01-01

Full Text Available Nanoporous copper is fabricated by dealloying the amorphous Ti2Cu alloy in 0.03 M HF electrolyte. The pore and ligament sizes of the nanoporous copper can be readily tailored by controlling the dealloying time. The as-prepared nanoporous copper provides fine and uniform nanoflowerpots to grow highly dispersed Au nanoflowers. The blooming Au nanoflowers in the nanoporous copper flowerpots exhibit both high catalytic activity and stability towards the oxidation of glucose, indicating that the amorphous alloys are ideal precursors to form nanoflowerpot which can grow functional nanoflowers.

Threshold irradiation dose for amorphization of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

1997-04-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

Threshold irradiation dose for amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1997-01-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

Threshold irradiation dose for amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1997-01-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

Production and properties of light-metal base amorphous alloys

International Nuclear Information System (INIS)

Inoue, Akihisa; Masumoto, Tsuyoshi

1993-01-01

Light-metal base alloys with high specific strength and good corrosion resistance were produced through amorphization of Al and Mg-based alloys. The amorphous phase is formed in rapidly solidified Al-TM-Ln and Mg-TM-Ln (TM=transition metal, Ln=lanthanide metal) alloys. The highest tensile strength (σ f ) reaches 1,330 MPa for the Al base and 830 MPa for the Mg base. Furthermore, the Mg-based alloys have a large glass-forming capacity which enables to produce an amorphous phase by a metallic mold casting method. The extrusion of the Al-based amorphous powders at temperatures above crystallization temperature caused the formation of high strength materials with finely mixed structure consisting of dispersed intermetallic compounds in an Al matrix. The highest values of σ f and fatigue limit are as high as 940 and 313 MPa, respectively, at room temperature and 520 and 165 MPa at 473 K. The extruded Al-Ni-Mm alloy has already been used as machine parts and subsequent further development as practical materials is expected by taking these advantages

The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

Science.gov (United States)

Nguyen, Duc; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Girolami, Gregory S.; Lyding, Joseph; Gruebele, Martin

2014-11-01

Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB2 glass surface, two-state hopping of 1-2 nm diameter cooperatively rearranging regions or "clusters" occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how "mixed" features can show up in surface dynamics of glasses.

On the nature of amorphous polymorphism of water

OpenAIRE

Koza, Michael Marek; Geil, Burkhard; Winkel, Katrin; Koehler, Christian; Czeschka, Franz; Scheuermann, Marco; Schober, Helmut; Hansen, Thomas

2005-01-01

We report elastic and inelastic neutron scattering experiments on different amorphous ice modifications. It is shown that an amorphous structure (HDA') indiscernible from the high-density phase (HDA), obtained by compression of crystalline ice, can be formed from the very high-density phase (vHDA) as an intermediate stage of the transition of vHDA into its low-density modification (LDA'). Both, HDA and HDA' exhibit comparable small angle scattering signals characterizing them as structures he...

Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

Energy Technology Data Exchange (ETDEWEB)

Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

2006-09-15

We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

International Nuclear Information System (INIS)

Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

2006-01-01

We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

Amorphous-like interfacial layer between a high-T{sub c} superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Kim, Bongjun; Kim, Hyuntak [Electronics and Tele-Communications Research Institute, Daejeon (Korea, Republic of); Nagai, Takuro; Matsui, Yoshio [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Horiuchi, Shigeo; Jeong, Daeyeong [Electrotechnology Research Institute, Changwon (Korea, Republic of); Deinhofer, Christian; Gritzner, Gerhard [Johannes Kepler University, Linz (Austria); Kim, Youngmin; Kim, Younjoong [Electron Microscopy Team, Korea Basic Science Institute, Daejeon (Korea, Republic of)

2006-05-15

The thin amorphous-like layer, formed at the interface between a high-T{sub c} superconducting (Tl{sub 0.5}, Pb{sub 0.5})(Sr{sub 0.8}, Ba{sub 0.2})Ca{sub 2}Cu{sub 3}O{sub y} (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO{sub 2} + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

Effect of amorphous lamella on the crack propagation behavior of crystalline Mg/amorphous Mg-Al nanocomposites

Science.gov (United States)

Hai-Yang, Song; Yu-Long, Li

2016-02-01

The effects of amorphous lamella on the crack propagation behavior in crystalline/amorphous (C/A) Mg/Mg-Al nanocomposites under tensile loading are investigated using the molecular dynamics simulation method. The sample with an initial crack of orientation [0001] is considered here. For the nano-monocrystal Mg, the crack growth exhibits brittle cleavage. However, for the C/A Mg/Mg-Al nanocomposites, the ‘double hump’ behavior can be observed in all the stress-strain curves regardless of the amorphous lamella thickness. The results indicate that the amorphous lamella plays a critical role in the crack deformation, and it can effectively resist the crack propagation. The above mentioned crack deformation behaviors are also disclosed and analyzed in the present work. The results here provide a strategy for designing the high-performance hexagonal-close-packed metal and alloy materials. Project supported by the National Natural Science Foundation of China (Grant Nos. 11372256 and 11572259), the 111 Project (Grant No. B07050), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-12-1046), and the Program for New Scientific and Technological Star of Shaanxi Province, China (Grant No. 2012KJXX-39).

Radiation damage in amorphous solids - a computer simulation

International Nuclear Information System (INIS)

Chaki, T.K.; Li, J.C.M.

1984-01-01

It is known for crystalline materials that injection of high energy atoms introduces point defects. The nature of defects is not known for amorphous solids. So a molecular dynamic simulation of radiation damage in an amorphous metal was carried out. An amorphous structure of 685 atoms with periodic boundary conditions in all 3 dimensions was equilibrated first. Then one atom on the surface was given a high initial velocity so it was injected inward. Radial temperature distribution around the line of injection was calculated as a function of time. Void distribution and its evolution with time in the direction of injection was calculated by counting the atomic centers in thin slabs perpendicular to the line of injection. The swelling of the whole solid was calculated also. Some results are compared with experiments

Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Theoretical research on amorphous silicon electronic states by computer-aided simulation); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Keisanki simulation ni yoru amorphous silicon no denshi jotai no rironteki kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1985-04-01

Research on the basic physical properties of amorphous silicon materials and for the development of materials for thermally stable amorphous silicon is conducted through theoretical reasoning and computer-aided simulation. In the effort at achieving a high conversion efficiency using an amorphous silicon alloy, a process of realizing desired photoabsorption becomes possible when the correlation between the atomic structure and the photoabsorption coefficient is clearly established and the atomic structure is manipulated. In this connection, analytical studies are conducted to determine how microscopic structures are reflected on macroscopic absorption coefficients. In the computer-aided simulation, various liquid structures and amorphous structures are worked out, which is for the atom-level characterization of structures with topological disturbances, such as amorphous structures. Glass transition is simulated using a molecular kinetic method, in particular, and the melting of crystals, crystallization of liquids, and vitrification (conversion into the amorphous state) are successfully realized, though in a computer-aided simulation, for the first time in the world. (NEDO)

Structures of high and low density amorphous ice by neutron diffraction

International Nuclear Information System (INIS)

Finney, J.L.; Hallbrucker, A.; Kohl, I.; Soper, A.K.; Bowron, D.T.

2002-01-01

Neutron diffraction with isotope substitution is used to determine the structures of high (HDA) and low (LDA) density amorphous ice. Both 'phases' are fully hydrogen bonded, tetrahedral networks, with local order similarities between LDA and ice Ih, and HDA and liquid water. Moving from HDA, through liquid water and LDA to ice Ih, the second shell radial order increases at the expense of spatial order. This is linked to a fifth first neighbor 'interstitial' that restricts the orientations of first shell waters. This 'lynch pin' molecule which keeps the HDA structure intact has implications for the nature of the HDA-LDA transition that bear on the current metastable water debate

The nature of the photoluminescence in amorphized PZT

International Nuclear Information System (INIS)

Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

2005-01-01

The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

Neutron irradiation and high temperature effects on amorphous Fe-based nano-coatings on steel – A macroscopic assessment

International Nuclear Information System (INIS)

Simos, N.; Zhong, Z.; Dooryhee, E.; Ghose, S.; Gill, S.

2017-01-01

Here, this study revealed that loss of ductility in an amorphous Fe-alloy coating on a steel substrate composite structure was essentially prevented from occurring, following radiation with modest neutron doses of ~2 x 10 18 n/cm 2 . At the higher neutron dose of ~2 x 10 19 , macroscopic stress-strain analysis showed that the amorphous Fe-alloy nanostructured coating, while still amorphous, experienced radiation-induced embrittlement, no longer offering protection against ductility loss in the coating-substrate composite structure. Neutron irradiation in a corrosive environment revealed exemplary oxidation/corrosion resistance of the amorphous Fe-alloy coating, which is attributed to the formation of the Fe 2 B phase in the coating. To establish the impact of elevated temperatures on the amorphous-to-crystalline transition in the amorphous Fe-alloy, electron microscopy was carried out which confirmed the radiation-induced suppression of crystallization in the amorphous Fe-alloy nanostructured coating.

Formation of quasicrystals and amorphous-to-quasicrystalline phase transformation kinetics in Zr65Al7.5Ni10Cu7.5Ag10 metallic glass under pressure

DEFF Research Database (Denmark)

Jiang, Jianzhong; Zhuang, Yanxin; Rasmussen, Helge Kildahl

2001-01-01

The effect of pressure on the formation of quasicrystals and the amorphous-to-quasicrystalline phase transformation kinetics in the supercooled liquid region for a Zr65Al7.5Ni10Cu7.5Ag10 metallic glass have been investigated by in situ high-pressure and high-temperature nonisothermal and isothermal...... of quasicrystals decrease, Atomic mobility is important for the formation of quasicrystals from the metallic glass whereas the relationship of the crystallization temperature vs pressure for the transition from the quasicrystalline state to intermetallic compounds may mainly depend on the thermodynamic potential...... energy barrier. To study the amorphous-to-quasicrystalline phase transformation kinetics in the metallic glass, relative volume fractions of the transferred quasicrystalline phase as a function of annealing time, obtained at 663, 673, 683, and 693 K, have been analyzed in details using 14 nucleation...

Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

International Nuclear Information System (INIS)

Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan; Aboy, Maria; Barbolla, Juan

2004-01-01

Solid phase epitaxial regrowth of pre-amorphizing implants has received significant attention as a method to achieve high dopant activation with minimal diffusion at low implant temperatures and suppress channelling. Therefore, a good understanding of the amorphization and regrowth mechanisms is required in process simulators. We present an atomistic amorphization and recrystallization model that uses the interstitial-vacancy (I-V) pair as a building block to describe the amorphous phase. I-V pairs are locally characterized by the number of neighbouring I-V pairs. This feature captures the damage generation and the dynamical annealing during ion implantation, and also explains the annealing behaviour of amorphous layers and amorphous pockets

Amorphous silica studied by high energy x-ray diffraction

DEFF Research Database (Denmark)

Poulsen, H.F.; Neuefeind, J.; Neumann, H.B.

1995-01-01

-ray and neutron data. A feasibility study of amorphous silica has been performed at 95 keV, using a wiggler synchrotron beam-line at HASYLAB and a cylindrical sample, 3 mm in diameter. The range of Q between 0.8 and 32 Angstrom(-1) was covered. A thorough discussion of the experimental challenges is given...

Study of structural relaxation in amorphous alloys prepared by sputtering

International Nuclear Information System (INIS)

Habibi, S.; Banaee, N.; Majidy, S.

2004-01-01

Full text: We have prepared amorphous alloy of Al x Cu 1-x (with X= 93, 90, 80, 70, 30) using sputtering system. The rate of growth was 0.7 nm/sec. X-ray diffractometer was used to conform the amorphous nature of the prepared specimens. High temperature annealing can change amorphous to crystalline structure, while low temperature annealing may transform amorphous state to a more stable amorphous state via structural relaxation of the specimen and enhancing the properties of the alloys, such as mechanical ductility etc. Here we have annealed the alloys at temperatures 100, 150, 200, 250, 300 and 350 C for 1 hour. We observed that microhardness of the specimen increases with annealing and gets maximum value at 300 C. Our XRD experiments and also earlier Moessbauer studies show that while the average interatomic distances reduces due to annealing, structure remains amorphous

Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Kalay, Yunus Eren [Iowa State Univ., Ames, IA (United States)

2009-01-01

Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T₀ curves, which makes Al-Si a good candidate for solubility extension while the plunging T₀ line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of ~0.2, JH and TMK deviate from

Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

International Nuclear Information System (INIS)

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seungho; Balaji, Nagarajan; Ahn, Shihyun; Hussain, Shahzada Qamar; Han, Sangmyeong; Jung, Junhee; Jang, Juyeon; Lee, Yunjung; Yi, Junsin

2013-01-01

Highlights: ► We have employed a LiF dielectric layer as a new back-contact electrode. ► Increasing LiF thickness will decrease barrier for electrons transport, thus yield J sc . ► Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield V oc . ► Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%. -- Abstract: To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V oc ), short-circuit current density (J sc ), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm 2 heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V oc of 690 mV, J sc of 33.62 mA/cm 2 , and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells

Polarized Raman spectroscopic study of relaxed high density amorphous ices under pressure.

Science.gov (United States)

Suzuki, Yoshiharu; Tominaga, Yasunori

2010-10-28

We have made high density amorphous ice (HDA) by the pressure-induced amorphization of hexagonal ice at 77 K and measured the volume change on isobaric heating in a pressure range between 0.1 and 1.5 GPa. The volume of HDA on heating below ∼0.35 GPa increases, while the volume of HDA on heating above ∼0.35 GPa decreases. The polarized OH-stretching Raman spectra of the relaxed HDAs are compared with that of the unannealed HDA. The relaxed HDAs are prepared at 0.2 GPa at 130 K and 1.5 GPa at 160 K. It is found that the relatively strong totally symmetric OH-stretching vibration mode around 3100 cm(-1) exists in the depolarized reduced Raman spectrum χ(VH)(") of the unannealed HDA and that its intensity rapidly decreases by relaxation. The χ(VH)(") profiles of the relaxed HDA are similar to those of liquid water. These results indicate that the HDA reaches a nearly equilibrium state by annealing and the intrinsic state of HDA relates to a liquid state. The pressure-volume curve of the relaxed HDA at 140 K seems to be smooth in the pressure range below 1.5 GPa.

Thermal conductivity of sputtered amorphous Ge films

International Nuclear Information System (INIS)

Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

2014-01-01

We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

Polyamorphism in Water: Amorphous Ices and their Glassy States

Science.gov (United States)

Amann-Winkel, K.; Boehmer, R.; Fujara, F.; Gainaru, C.; Geil, B.; Loerting, T.

2015-12-01

Water is ubiquitous and of general importance for our environment. But it is also known as the most anomalous liquid. The fundamental origin of the numerous anomalies of water is still under debate. An understanding of these anomalous properties of water is closely linked to an understanding of the phase diagram of the metastable non-crystalline states of ice. The process of pressure induced amorphization of ice was first observed by Mishima et al. [1]. The authors pressurized hexagonal ice at 77 K up to a pressure of 1.6 GPa to form high density amorphous ice (HDA). So far three distinct structural states of amorphous water are known [2], they are called low- (LDA), high- (HDA) and very high density amorphous ice (VHDA). Since the discovery of multiple distinct amorphous states it is controversy discussed whether this phenomenon of polyamorphism at high pressures is connected to the occurrence of more than one supercooled liquid phase [3]. Alternatively, amorphous ices have been suggested to be of nanocrystalline nature, unrelated to liquids. Indeed inelastic X-ray scattering measurements indicate sharp crystal-like phonons in the amorphous ices [4]. In case of LDA the connection to the low-density liquid (LDL) was inferred from several experiments including the observation of a calorimetric glass-to-liquid transition at 136 K and ambient pressure [5]. Recently also the glass transition in HDA was observed at 116 K at ambient pressure [6] and at 140 K at elevated pressure of 1 GPa [7], using calorimetric measurements as well as dielectric spectroscopy. We discuss here the general importance of amorphous ices and their liquid counterparts and present calorimetric and dielectric measurements on LDA and HDA. The good agreement between dielectric and calorimetric results convey for a clearer picture of water's vitrification phenomenon. [1] O. Mishima, L. D. Calvert, and E. Whalley, Nature 314, 76, 1985 [2] D.T. Bowron, J. L. Finney, A. Hallbrucker, et al., J. Chem

Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

Energy Technology Data Exchange (ETDEWEB)

Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

2005-10-01

We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

Amorphous surface layers in Ti-implanted Fe

International Nuclear Information System (INIS)

Knapp, J.A.; Follstaedt, D.M.; Picraux, S.T.

1979-01-01

Implanting Ti into high-purity Fe results in an amorphous surface layer which is composed of not only Fe and Ti, but also C. Implantations were carried out at room temperature over the energy range 90 to 190 keV and fluence range 1 to 2 x 10 16 at/cm 2 . The Ti-implanted Fe system has been characterized using transmission electron microscopy (TEM), ion backscattering and channeling analysis, and (d,p) nuclear reaction analysis. The amorphous layer was observed to form at the surface and grow inward with increasing Ti fluence. For an implant of 1 x 10 17 Ti/cm 2 at 180 keV the layer thickness was 150 A, while the measured range of the implanted Ti was approx. 550 A. This difference is due to the incorporation of C into the amorphous alloy by C being deposited on the surface during implantation and subsequently diffusing into the solid. Our results indicate that C is an essential constituent of the amorphous phase for Ti concentrations less than or equal to 10 at. %. For the 1 x 10 17 Ti/cm 2 implant, the concentration of C in the amorphous phase was approx. 25 at. %, while that of Ti was only approx. 3 at. %. A higher fluence implant of 2 x 10 17 Ti/cm 2 produced an amorphous layer with a lower C concentration of approx. 10 at. % and a Ti concentration of approx. 20 at. %

High-Performance Corrosion-Resistant Materials: Iron-Based Amorphous-Metal Thermal-Spray Coatings

International Nuclear Information System (INIS)

Farmer, J C; Haslam, J J; Wong, F; Ji, X; Day, S D; Branagan, D J; Marshall, M C; Meacham, B E; Buffa, E J; Blue, C A; Rivard, J K; Beardsley, M B; Weaver, D T; Aprigliano, L F; Kohler, L; Bayles, R; Lemieux, E J; Wolejsza, T M; Martin, F J; Yang, N; Lucadamo, G; Perepezko, J H; Hildal, K; Kaufman, L; Heuer, A H; Ernst, F; Michal, G M; Kahn, H; Lavernia, E J

2004-01-01

The multi-institutional High Performance Corrosion Resistant Materials (HPCRM) Team is cosponsored by the Defense Advanced Projects Agency (DARPA) Defense Science Office (DSO) and the Department of Energy (DOE) Office of Civilian Radioactive Waste Management (OCRWM), and has developed new corrosion-resistant, iron-based amorphous metals that can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Corrosion costs the Department of Defense billions of dollars every year, with an immense quantity of material in various structures undergoing corrosion. For example, in addition to fluid and seawater piping, ballast tanks, and propulsions systems, approximately 345 million square feet of structure aboard naval ships and crafts require costly corrosion control measures. The use of advanced corrosion-resistant materials to prevent the continuous degradation of this massive surface area would be extremely beneficial. The Fe-based corrosion-resistant, amorphous-metal coatings under development may prove of importance for applications on ships. Such coatings could be used as an ''integral drip shield'' on spent fuel containers, as well as protective coatings that could be applied over welds, thereby preventing exposure to environments that might cause stress corrosion cracking. In the future, such new high-performance iron-based materials could be substituted for more-expensive nickel-based alloys, thereby enabling a reduction in the $58-billion life cycle cost for the long-term storage of the Nation's spent nuclear fuel by tens of percent

Fabrication and application of amorphous semiconductor devices

International Nuclear Information System (INIS)

Kumurdjian, Pierre.

1976-01-01

This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

Stress dependence of the domain wall potential in amorphous CoFeSiB glass-coated microwires

International Nuclear Information System (INIS)

Varga, R.; Zhukov, A.; Blanco, J.M.; Gonzalez, J.; Zhukova, V.; Vojtanik, P.

2006-01-01

We present a method to study the domain wall potential through the thermal activation of the domain wall across the energy barrier. Two contributions to the domain wall potential in amorphous microwires are recognized: magnetoelastic and relaxation. The role of each contribution is studied by measuring the switching field distribution at different frequencies and under applied stress

Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.

1991-01-01

Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

Crystallization-induced plasticity of Cu-Zr containing bulk amorphous alloys

International Nuclear Information System (INIS)

Lee, Seok-Woo; Huh, Moo-Young; Fleury, Eric; Lee, Jae-Chul

2006-01-01

This study examined the parameter governing the plasticity observed in various Cu-Zr containing monolithic amorphous alloys. All the alloys were fully amorphous in their as-cast condition but exhibited different plastic strains. Microscopic observations of the quasi-statically compressed alloys showed abundant nanocrystallites in the amorphous matrices in the alloys that exhibited pronounced plasticity. On the other hand, insignificant changes in the microstructure were observed in the alloy that did not show plasticity. The mechanism for the formation of these deformation-induced nanocrystallites was examined from the viewpoints of thermodynamics and kinetics. The role of the deformation-induced nanocrystallites on the plasticity of the amorphous alloy was examined using high-resolution transmission electron microscopy. The results demonstrate that compressive loading facilitates nanocrystallization in monolithic Cu-Zr containing amorphous alloys, resulting in plasticity. The parameter governing the plasticity in these monolithic Cu-Zr containing amorphous alloys lies in the activation energy for the overall crystallization process

In situ observation of shear-driven amorphization in silicon crystals

Energy Technology Data Exchange (ETDEWEB)

He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

2016-09-19

Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

Technique for determination of elastic limit of micron band-thick amorphous

International Nuclear Information System (INIS)

Zakharov, E.K.; Pol'dyaeva, G.P.; Tret'yakov, B.N.

1984-01-01

A method is suggested to determine the elastic limit of micron-thick amorphous band under bending. The elastic limit is determined by bending an amorphous band sample around a series of cylindrical mandrels of gradually decreasing radius. Experimental data on measuring the elastic limit of some amorphous iron base alloys according to the suggested technique are presented. The elastic limit of amorphous alloys is shown to lie in the 3140-4110 MPa range depending on chemical composition, which is about 2-2.5 times higher as compared to high-strength crystal alloys

Solid-state amorphization of SmFe3 by hydrogenation

International Nuclear Information System (INIS)

Mueller, K.H.; Kubis, M.; Handstein, A.; Gutfleisch, O.

2000-01-01

Hydrogen-induced amorphization (HIA) has received much attention as a method for the preparation of amorphous compounds since its discovery by Yeh et al. Meanwhile it has been observed for a large number of intermetallic compounds with C15, C23, B8 2 , DO 19 and L1 2 structures. E.G. the C15 Laves-type compounds (MgCu 2 -type structure) of rare earth (R) - transition metal (T) compounds RT 2 show HIA for R = Y, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho and Er. Aoki et al. postulated that new amorphizing compounds can be expected at high hydrogen pressures. In this work, the structural changes of SmFe 3 (PuNi 3 -type structure) during heating in high hydrogen pressures are reported

Emerging trends in the stabilization of amorphous drugs

DEFF Research Database (Denmark)

Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J.

2013-01-01

The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly...... water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative...... of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals....

Josephson phase qubit circuit for the evaluation of advanced tunnel barrier materials

Energy Technology Data Exchange (ETDEWEB)

Kline, Jeffrey S; Oh, Seongshik; Pappas, David P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Wang Haohua; Martinis, John M [Department of Physics, University of California, Santa Barbara, CA 93106 (United States)], E-mail: klinej@nist.gov

2009-01-15

We have found that crystalline Josephson junctions have problems with the control of critical current density that decrease the circuit yield. We present a superconducting quantum bit circuit designed to accommodate a factor of five variation in critical current density from one fabrication run to the next. The new design enables the evaluation of advanced tunnel barrier materials for superconducting quantum bits. Using this circuit design, we compare the performance of Josephson phase qubits fabricated with MgO and Al{sub 2}O{sub 3} advanced crystalline tunnel barriers to AlO{sub x} amorphous tunnel barrier qubits.

The Barriers to High-Quality Inpatient Pain Management: A Qualitative Study.

Science.gov (United States)

Lin, Richard J; Reid, M Carrington; Liu, Lydia L; Chused, Amy E; Evans, Arthur T

2015-09-01

The current literature suggests deficiencies in the quality of acute pain management among general medical inpatients. The aim of this qualitative study is to identify potential barriers to high-quality acute pain management among general medical inpatients at an urban academic medical center during a 2-year period. Data are collected using retrospective chart reviews, survey questionnaires, and semistructured, open-ended interviews of 40 general medical inpatients who have experienced pain during their hospitalization. Our results confirm high prevalence and disabling impacts of pain and significant patient- and provider-related barriers to high-quality acute pain management. We also identify unique system-related barriers such as time delay and pain management culture. Efforts to improve the pain management experience of general medical inpatients will need to address all these barriers. © The Author(s) 2014.

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

Nanoplasmonically Engineered Interfaces on Amorphous TiO2 for Highly Efficient Photocatalysis in Hydrogen Evolution.

Science.gov (United States)

Liang, Huijun; Meng, Qiuxia; Wang, Xiaobing; Zhang, Hucheng; Wang, Jianji

2018-04-25

The nanoplasmonic metal-driven photocatalytic activity depends heavily on the spacing between metal nanoparticles (NPs) and semiconductors, and this work shows that ethylene glycol (EG) is an ideal candidate for interface spacer. Controlling the synthetic systems at pH 3, the composite of Ag NPs with EG-stabilized amorphous TiO 2 (Ag/TiO 2 -3) was synthesized by the facile light-induced reduction. It is verified that EG spacers can set up suitable geometric arrangement in the composite: the twin hydroxyls act as stabilizers to bind Ag NPs and TiO 2 together and the nonconductive alkyl chains consisting only of two CH 2 are able to separate the two building blocks completely and also provide the shortest channels for an efficient transfer of radiation energies to reach TiO 2 . Employed as photocatalysts in hydrogen evolution under visible light, amorphous TiO 2 hardly exhibits the catalytic activity due to high defect density, whereas Ag/TiO 2 -3 represents a remarkably high catalytic efficiency. The enhancement mechanism of the reaction rate is proposed by the analysis of the compositional, structural, and optical properties from a series of Ag/TiO 2 composites.

High-field magnetization behavior in random anisotropy amorphous Co-Er alloys

Science.gov (United States)

Lassri, H.; Driouch, L.; Krishnan, R.

1994-05-01

Amorphous Co1-xErx ribbons with x=55 and 65 were prepared by the melt-spinning technique. Magnetization measurements were carried out in the temperature range 4-100 K under high magnetic fields up to 20 T. Even at 20 T the saturation is not fully attained. Assuming that Co has no moment in the alloy with x=65 the Er moment is found to be 7.0μB which indicates a speromagnetic spin structure. The Co moment in the alloy with x=55 is then found to be 0.1μB, which is negligibly small. By analyzing the approach to saturation using Chudnovsky's theory we have extracted some fundamental parameters.

Application of High-Velocity Oxygen-Fuel (HVOF Spraying to the Fabrication of Yb-Silicate Environmental Barrier Coatings

Directory of Open Access Journals (Sweden)

Emine Bakan

2017-04-01

Full Text Available From the literature, it is known that due to their glass formation tendency, it is not possible to deposit fully-crystalline silicate coatings when the conventional atmospheric plasma spraying (APS process is employed. In APS, rapid quenching of the sprayed material on the substrate facilitates the amorphous deposit formation, which shrinks when exposed to heat and forms pores and/or cracks. This paper explores the feasibility of using a high-velocity oxygen-fuel (HVOF process for the cost-effective fabrication of dense, stoichiometric, and crystalline Yb2Si2O7 environmental barrier coatings. We report our findings on the HVOF process optimization and its resultant influence on the microstructure development and crystallinity of the Yb2Si2O7 coatings. The results reveal that partially crystalline, dense, and vertical crack-free EBCs can be produced by the HVOF technique. However, the furnace thermal cycling results revealed that the bonding of the Yb2Si2O7 layer to the Silicon bond coat needs to be improved.

Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

Science.gov (United States)

Farmer, Joseph C [Tracy, CA; Wong, Frank M. G. [Livermore, CA; Haslam, Jeffery J [Livermore, CA; Yang, Nancy [Lafayette, CA; Lavernia, Enrique J [Davis, CA; Blue, Craig A [Knoxville, TN; Graeve, Olivia A [Reno, NV; Bayles, Robert [Annandale, VA; Perepezko, John H [Madison, WI; Kaufman, Larry [Brookline, MA; Schoenung, Julie [Davis, CA; Ajdelsztajn, Leo [Walnut Creek, CA

2009-11-17

A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

Positrons in amorphous alloys

International Nuclear Information System (INIS)

Moser, Pierre.

1981-07-01

Positron annihilation techniques give interesting informations about ''empty spaces'' in amorphous alloys. The results of an extensive research work on the properties of either pre-existing or irradiation induced ''empty spaces'' in four amorphous alloys are presented. The pre-existing empty spaces appear to be small vacancy-like defects. The irradiation induced defects are ''close pairs'' with widely distributed configurations. There is a strong interaction between vacancy like and interstitial like components. A model is proposed, which explains the radiation resistance mechanism of the amorphous alloys. An extensive joint research work to study four amorphous alloys, Fe 80 B 20 ,Fe 40 Ni 40 P 14 B 6 , Cu 50 Ti 50 , Pd 80 Si 20 , is summarized

Development of a beam current monitor by using an amorphous magnetic core

International Nuclear Information System (INIS)

Kobayashi, T.; Ueda, T.; Yoshida, Y.; Miya, K.; Tagawa, S.; Kobayashi, H.

1993-01-01

The high performance amorphous magnetic core monitor (ACM) for the measurement of electron beam currents has been developed. This monitor is composed of an amorphous magnetic core, radiation shields, a winding, magnetic absorbers, a ceramic vacuum duct and a SMA connecter. The ACM showed the very fast rise and fall times (< 1 ns), the high sensitivity (5 V/A at 50 Ω load), the good linearity, and good S/N ratio due to the high permeability of the amorphous magnetic core. The monitor works as a primary transformer. The time-response was simulated by an electric circuit analysis code. (orig.)

Clozapine-carboxylic acid plasticized co-amorphous dispersions: Preparation, characterization and solution stability evaluation

Directory of Open Access Journals (Sweden)

Ali Ahmed Mahmoud Abdelhaleem

2015-06-01

Full Text Available This study addressed the possibility of forming of co-amorphous systems between clozapine (CZ and various carboxylic acid plasticizers (CAPs. The aim was to improve the solubility and oral bioavailability of clozapine. Co-amorphous dispersions were prepared using modified solvent evaporation methodology at drug/plasticizer stoichiometric ratios of 1:1, 1:1.5 and 1:2. Solid state characterization was performed using differential scanning calorimetry, X-ray diffraction and infra red spectroscopy. Highly soluble homogeneous co-amorphous dispersions were formed between clozapine and CAPs via hydrogen bonding. The co-amorphous dispersions formed with tartaric acid (1:2 showed the highest dissolution percentage (> 95 % in 20 minutes compared to pure crystalline CZ (56 %. Highly stable solutions were obtained from co-amorphous CZ-citric and CZ-tartaric acid at 1:1.5 molar ratio. The prepared dispersions suggest the possibility of peroral or sublingual administration of highly soluble clozapine at a reduced dose with the great chance to bypass the first pass metabolism.

A High-Performance Corrosion-Resistant Iron-Based Amorphous Metal - The Effects of Composition, Structure and Environment on Corrosion Resistance

International Nuclear Information System (INIS)

Farmer, J.; Haslam, J.; Day, D.; Lian, T.; Saw, C.; Hailey, P.; Choi, J.S.; Rebak, R.; Yang, N.; Bayles, R.; Aprigliano, L.; Payer, J.; Perepezko, J.; Hildal, K.; Lavernia, E.; Ajdelsztajn, L.; Branagan, D.; Beardsley, B.

2007-01-01

The passive film stability of several Fe-based amorphous metal formulations have been found to be comparable to that of high-performance Ni-based alloys, and superior to that of stainless steels, based on electrochemical measurements of the passive film breakdown potential and general corrosion rates. Chromium (Cr), molybdenum (Mo) and tungsten (W) provide corrosion resistance; boron (B) enables glass formation; and rare earths such as yttrium (Y) lower critical cooling rate (CCR). The high boron content of this particular amorphous metal also makes it an effective neutron absorber, and suitable for criticality control applications, as discussed in companion publications. Corrosion data for SAM2X5 (Fe 49.7 Cr 17.7 Mn 1.9 Mo 7.4 W 1.6 B 15.2 C 3.8 Si 2.4 ) is discussed here. (authors)

Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

International Nuclear Information System (INIS)

Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

1976-02-01

Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

Corrosion behavior of amorphous and crystalline Cu50Ti50 and Cu50Zr50 alloys

International Nuclear Information System (INIS)

Naka, M.; Hoshimoto, K.; Masumoto, T.

1978-01-01

Corrosion rates and anodic polarization curves of amorphous and crystalline Cu 50 Ti 50 and Cu 50 Zr 50 alloys have been examined in various acidic, neutral and alkaline solutions. The amorphous alloys are very stable in acidic and alkaline solutions, but unstable in agressive chloride solutions. The corrosion resistance of these amorphous alloys is higher than that of the crystallized alloys. The high corrosion resistance of amorphous alloys is attributable to the high chemical homogeneity of amorphous alloys without localized crystalline defects such as precipitates, segregates, grain boundaries, etc. Metalloid elements play an important role in the corrosion behavior of amorphous alloys; the addition of phosphorus to amorphous Cu-Ti alloy greatly increases the corrosion resistance, even in 1N HCl. (Auth.)

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Science.gov (United States)

Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

2017-08-01

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

Irradiation-induced amorphization process in graphite

Energy Technology Data Exchange (ETDEWEB)

Abe, Hiroaki [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1996-04-01

Effects of the element process of irradiation damage on irradiation-induced amorphization processes of graphite was studied. High orientation thermal decomposed graphite was cut about 100 nm width and used as samples. The irradiation experiments are carried out under the conditions of electronic energy of 100-400 KeV, ion energy of 200-600 KeV, ionic species Xe, Ar, Ne, C and He and the irradiation temperature at from room temperature to 900 K. The critical dose ({phi}a) increases exponentially with increasing irradiation temperature. The displacement threshold energy of graphite on c-axis direction was 27 eV and {phi}a{sup e} = 0.5 dpa. dpa is the average number of displacement to atom. The critical dose of ion irradiation ({phi}a{sup i}) was 0.2 dpa at room temperature, and amorphous graphite was produced by less than half of dose of electronic irradiation. Amorphization of graphite depending upon temperature is discussed. (S.Y.)

Inelastic neutron scattering of amorphous ice

International Nuclear Information System (INIS)

Fukazawa, Hiroshi; Ikeda, Susumu; Suzuki, Yoshiharu

2001-01-01

We measured the inelastic neutron scattering from high-density amorphous (HDA) and low-density amorphous (LDA) ice produced by pressurizing and releasing the pressure. We found a clear difference between the intermolecular vibrations in HDA and those in LDA ice: LDA ice has peaks at 22 and 33 meV, which are also seen in the spectrum of lattice vibrations in ice crystal, but the spectrum of HDA ice does not have these peaks. The excitation energy of librational vibrations in HDA ice is 10 meV lower than that in LDA ice. These results imply that HDA ice includes 2- and 5-coordinated hydrogen bonds that are created by breakage of hydrogen bonds and migration of water molecules into the interstitial site, while LDA ice contains mainly 4-coordinated hydrogen bonds and large cavities. Furthermore, we report the dynamical structure factor in the amorphous ice and show that LDA ice is more closely related to the ice crystal structure than to HDA ice. (author)

Amorphous silica from rice husk at various temperatures

International Nuclear Information System (INIS)

Javed, S.J.; Feroze, N.; Tajwar, S.

2008-01-01

Rice husk is being used as a source of energy in many heat generating system because of its high calorific value and its availability in many rice producing areas. Rice husk contains approximately 20% silica which is presented in hydrated form. This hydrated silica can be retrieved as amorphous silica under controlled thermal conditions. Uncontrolled burning of rice husk produces crystalline silica which is not reactive silica but can be used as filler in many applications. Amorphous silica is reactive silica which has better market value due to its reactive nature in process industry. The present study deals with the production of amorphous silica at various temperatures from rice husk. Various ashes were prepared in tube furnace by changing the burning temperatures for fixed time intervals and analyzed by XRD. It has been observed that for two hours calculation's of rice husk renders mostly amorphous silica at 650 degree C where as at higher temperatures crystalline silica was obtained. (author)

Crystallization of biogenic hydrous amorphous silica

Science.gov (United States)

Kyono, A.; Yokooji, M.; Chiba, T.; Tamura, T.; Tuji, A.

2017-12-01

Diatom, Nitzschia cf. frustulum, collected from Lake Yogo, Siga prefecture, Japan was cultured in laboratory. Organic components of the diatom cell were removed by washing with acetone and sodium hypochlorite. The remaining frustules were studied by SEM-EDX, FTIR spectroscopy, and synchrotron X-ray diffraction. The results showed that the spindle-shaped morphology of diatom frustule was composed of hydrous amorphous silica. Pressure induced phase transformation of the diatom frustule was investigated by in situ Raman spectroscopic analysis. With exposure to 0.3 GPa at 100 oC, Raman band corresponding to quartz occurred at ν = 465 cm-1. In addition, Raman bands known as a characteristic Raman pattern of moganite was also observed at 501 cm-1. From the integral ratio of Raman bands, the moganite content in the probed area was estimated to be approximately 50 wt%. With the pressure and temperature effect, the initial morphology of diatom frustule was completely lost and totally changed to a characteristic spherical particle with a diameter of about 2 mm. With keeping the compression of 5.7 GPa at 100 oC, a Raman band assignable to coesite appeared at 538 cm-1. That is, with the compression and heating, the hydrous amorphous silica can be readily crystallized into quartz, moganite, and coesite. The first-principles calculations revealed that a disiloxane molecule stabilized in a trans configuration is twisted 60o and changed into the cis configuration with a close approach of water molecule. It is therefore a reasonable assumption that during crystallization of hydrous amorphous silica, the Si-O-Si bridging unit with the cis configuration would survive as a structural defect and then crystallized into moganite by keeping the geometry. This hypothesis is adaptable to the phase transformation from hydrous amorphous silica to coesite as well, because coesite has the four-membered rings and easily formed from the hydrous amorphous silica under high pressure and high

Superconducting properties of amorphous Zr-Ge binary alloys

International Nuclear Information System (INIS)

Inoue, A.; Takahashi, Y.; Toyota, N.; Fukase, T.; Masumoto, T.

1982-01-01

A new type of refractory metal-metalloid amorphous alloys exhibiting superconductivity has been found in a binary Zr-Ge system by a modified melt-spinning technique. Specimens are in the form of continuous ribbons 1 to 2 mm wide and 0.02 to 0.03 mm thick. The germanium content in the amorphous alloys is limited to the range of 13 to 21 at%. These amorphous alloys are so ductile that no cracks are observed even after closely contacted bending test. Data are reported for various alloy compositions for the Vickers hardness and crystallization temperature, the tensile fracture strength, superconducting transition temperature Tsub(c), upper critical magnetic field, critical current density in the absence of an applied field, upper critical field gradient at Tsub(c) and the electrical resistivity at 4.2 K. The Ginzburg-Landau (GL) parameter and the GL coherence length were estimated to be 72 to 111 and about 7.9 nm, respectively, from these experimental values by using the Ginzburg-Landau-Abrikosov-Gorkov theory and hence it is concluded that the Zr-Ge amorphous alloys are extremely 'soft' type-II superconductor with high degree of dirtiness which possesses the Tsub(c) values higher than zirconium metal, in addition to high strength combined with good ductility. (author)

Recent Progress in Some Amorphous Materials for Supercapacitors.

Science.gov (United States)

Li, Qing; Xu, Yuxia; Zheng, Shasha; Guo, Xiaotian; Xue, Huaiguo; Pang, Huan

2018-05-14

A breakthrough in technologies having "green" and sustainable energy storage conversion is urgent, and supercapacitors play a crucial role in this area of research. Owing to their unique porous structure, amorphous materials are considered one of the best active materials for high-performance supercapacitors due to their high specific capacity, excellent cycling stability, and fast charging rate. This Review summarizes the synthesis of amorphous materials (transition metal oxides, carbon-based materials, transition metal sulfides, phosphates, hydroxides, and their complexes) to highlight their electrochemical performance in supercapacitors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seungho [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Balaji, Nagarajan [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Ahn, Shihyun [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Hussain, Shahzada Qamar [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Han, Sangmyeong [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Jang, Juyeon; Lee, Yunjung [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

2013-05-15

Highlights: ► We have employed a LiF dielectric layer as a new back-contact electrode. ► Increasing LiF thickness will decrease barrier for electrons transport, thus yield J{sub sc}. ► Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield V{sub oc}. ► Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%. -- Abstract: To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V{sub oc}), short-circuit current density (J{sub sc}), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm{sup 2} heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V{sub oc} of 690 mV, J{sub sc} of 33.62 mA/cm{sup 2}, and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells.

Two-level tunneling systems in amorphous alumina

Science.gov (United States)

Lebedeva, Irina V.; Paz, Alejandro P.; Tokatly, Ilya V.; Rubio, Angel

2014-03-01

The decades of research on thermal properties of amorphous solids at temperatures below 1 K suggest that their anomalous behaviour can be related to quantum mechanical tunneling of atoms between two nearly equivalent states that can be described as a two-level system (TLS). This theory is also supported by recent studies on microwave spectroscopy of superconducting qubits. However, the microscopic nature of the TLS remains unknown. To identify structural motifs for TLSs in amorphous alumina we have performed extensive classical molecular dynamics simulations. Several bistable motifs with only one or two atoms jumping by considerable distance ~ 0.5 Å were found at T=25 K. Accounting for the surrounding environment relaxation was shown to be important up to distances ~ 7 Å. The energy asymmetry and barrier for the detected motifs lied in the ranges 0.5 - 2 meV and 4 - 15 meV, respectively, while their density was about 1 motif per 10 000 atoms. Tuning of motif asymmetry by strain was demonstrated with the coupling coefficient below 1 eV. The tunnel splitting for the symmetrized motifs was estimated on the order of 0.1 meV. The discovered motifs are in good agreement with the available experimental data. The financial support from the Marie Curie Fellowship PIIF-GA-2012-326435 (RespSpatDisp) is gratefully acknowledged.

PDF analysis on re-crystallized structure from amorphous BiT

Energy Technology Data Exchange (ETDEWEB)

Yoneda, Yasuhiro [Japan Atomic Energy Research Institute, Synchrotron Radiation Research Center, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5148 (Japan)]. E-mail: yoneda@spring8.or.jp; Kohara, Shinji [Synchrotron Radiation Research Laboratory, Japan Synchrotron Radiation, Research Institute, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5198 (Japan); Hamazaki, Shin' ichi [Department of Electronics, Iwaki Meisei University, Iino 5-5-1, Chuohdai, Fukushima 970-8551 (Japan); Takashige, Masaaki [Department of Electronics, Iwaki Meisei University, Iino 5-5-1, Chuohdai, Fukushima 970-8551 (Japan); Mizuki, Jun' ichiro [Japan Atomic Energy Research Institute, Synchrotron Radiation Research Center, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5148 (Japan)

2005-08-15

A glass sample of composition Bi{sub 4}Ti{sub 3}O{sub 12} was prepared by rapid quenching. The as-quenched sample was confirmed to be amorphous by synchrotron X-ray measurements. The crystallization process of the amorphous sample was also investigated by high-energy X-ray diffraction and by atomic pair distribution function analysis. The perovskite layer in the crystal Bi{sub 4}Ti{sub 3}O{sub 12} is transformed to a pyrochlore structure in the amorphous sample. The amorphous sample first crystallized to a metastable phase by acquiring long-range ordering of the pyrochlore structure at T {sub cryst1}, and then secondary crystallized into a reverted Bi{sub 4}Ti{sub 3}O{sub 12} structure at T {sub cryst2}.

Amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

Amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.

2013-04-01

Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

Characterization of Amorphous and Co-Amorphous Simvastatin Formulations Prepared by Spray Drying

Directory of Open Access Journals (Sweden)

Goedele Craye

2015-12-01

Full Text Available In this study, spray drying from aqueous solutions, using the surface-active agent sodium lauryl sulfate (SLS as a solubilizer, was explored as a production method for co-amorphous simvastatin–lysine (SVS-LYS at 1:1 molar mixtures, which previously have been observed to form a co-amorphous mixture upon ball milling. In addition, a spray-dried formulation of SVS without LYS was prepared. Energy-dispersive X-ray spectroscopy (EDS revealed that SLS coated the SVS and SVS-LYS particles upon spray drying. X-ray powder diffraction (XRPD and differential scanning calorimetry (DSC showed that in the spray-dried formulations the remaining crystallinity originated from SLS only. The best dissolution properties and a “spring and parachute” effect were found for SVS spray-dried from a 5% SLS solution without LYS. Despite the presence of at least partially crystalline SLS in the mixtures, all the studied formulations were able to significantly extend the stability of amorphous SVS compared to previous co-amorphous formulations of SVS. The best stability (at least 12 months in dry conditions was observed when SLS was spray-dried with SVS (and LYS. In conclusion, spray drying of SVS and LYS from aqueous surfactant solutions was able to produce formulations with improved physical stability for amorphous SVS.

Characterization of Amorphous and Co-Amorphous Simvastatin Formulations Prepared by Spray Drying.

Science.gov (United States)

Craye, Goedele; Löbmann, Korbinian; Grohganz, Holger; Rades, Thomas; Laitinen, Riikka

2015-12-03

In this study, spray drying from aqueous solutions, using the surface-active agent sodium lauryl sulfate (SLS) as a solubilizer, was explored as a production method for co-amorphous simvastatin-lysine (SVS-LYS) at 1:1 molar mixtures, which previously have been observed to form a co-amorphous mixture upon ball milling. In addition, a spray-dried formulation of SVS without LYS was prepared. Energy-dispersive X-ray spectroscopy (EDS) revealed that SLS coated the SVS and SVS-LYS particles upon spray drying. X-ray powder diffraction (XRPD) and differential scanning calorimetry (DSC) showed that in the spray-dried formulations the remaining crystallinity originated from SLS only. The best dissolution properties and a "spring and parachute" effect were found for SVS spray-dried from a 5% SLS solution without LYS. Despite the presence of at least partially crystalline SLS in the mixtures, all the studied formulations were able to significantly extend the stability of amorphous SVS compared to previous co-amorphous formulations of SVS. The best stability (at least 12 months in dry conditions) was observed when SLS was spray-dried with SVS (and LYS). In conclusion, spray drying of SVS and LYS from aqueous surfactant solutions was able to produce formulations with improved physical stability for amorphous SVS.

Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

Science.gov (United States)

Oh, Teresa; Kim, Chy Hyung

2016-02-01

To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB.

Large-Scale Structure and Hyperuniformity of Amorphous Ices

Science.gov (United States)

Martelli, Fausto; Torquato, Salvatore; Giovambattista, Nicolas; Car, Roberto

2017-09-01

We investigate the large-scale structure of amorphous ices and transitions between their different forms by quantifying their large-scale density fluctuations. Specifically, we simulate the isothermal compression of low-density amorphous ice (LDA) and hexagonal ice to produce high-density amorphous ice (HDA). Both HDA and LDA are nearly hyperuniform; i.e., they are characterized by an anomalous suppression of large-scale density fluctuations. By contrast, in correspondence with the nonequilibrium phase transitions to HDA, the presence of structural heterogeneities strongly suppresses the hyperuniformity and the system becomes hyposurficial (devoid of "surface-area fluctuations"). Our investigation challenges the largely accepted "frozen-liquid" picture, which views glasses as structurally arrested liquids. Beyond implications for water, our findings enrich our understanding of pressure-induced structural transformations in glasses.

Pressure effects on Al89La6Ni5 amorphous alloy crystallization

DEFF Research Database (Denmark)

Zhuang, Yanxin; Jiang, Jianzhong; Zhou, T. J.

2000-01-01

The pressure effect on the crystallization of the Al89La6Ni5 amorphous alloy has been investigated by in situ high-pressure and high-temperature x-ray powder diffraction using synchrotron radiation. The amorphous alloy crystallizes in two steps in the pressure range studied (0-4 GPa). The first p...

Hydrogen in disordered and amorphous solids

International Nuclear Information System (INIS)

Bambakidis, G; Bowman, R.C.

1986-01-01

This book presents information on the following topoics: elements of the theory of amorphous semiconductors; electronic structure of alpha-SiH; fluctuation induced gap states in amorphous hydrogenated silicon; hydrogen on semiconductor surfaces; the influence of hydrogen on the defects and instabilities in hydrogenated amorphous silicon; deuteron magnetic resonance in some amorphous semiconductors; formation of amorphous metals by solid state reactions of hydrogen with an intermetallic compound; NMR studies of the hydrides of disordered and amorphous alloys; neutron vibrational spectroscopy of disordered metal-hydrogen system; dynamical disorder of hydrogen in LaNi /SUB 5-y/ M /SUB y/ hydrides studied by quasi-elastic neutron scattering; recent studies of intermetallic hydrides; tritium in Pd and Pd /SUB 0.80/ Sg /SUB 0.20/ ; and determination of hydrogen concentration in thin films of absorbing materials

Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

International Nuclear Information System (INIS)

Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.

2006-01-01

Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide

Influence of sample preparation on the transformation of low-density to high-density amorphous ice: An explanation based on the potential energy landscape

Science.gov (United States)

Giovambattista, Nicolas; Starr, Francis W.; Poole, Peter H.

2017-07-01

Experiments and computer simulations of the transformations of amorphous ices display different behaviors depending on sample preparation methods and on the rates of change of temperature and pressure to which samples are subjected. In addition to these factors, simulation results also depend strongly on the chosen water model. Using computer simulations of the ST2 water model, we study how the sharpness of the compression-induced transition from low-density amorphous ice (LDA) to high-density amorphous ice (HDA) is influenced by the preparation of LDA. By studying LDA samples prepared using widely different procedures, we find that the sharpness of the LDA-to-HDA transformation is correlated with the depth of the initial LDA sample in the potential energy landscape (PEL), as characterized by the inherent structure energy. Our results show that the complex phenomenology of the amorphous ices reported in experiments and computer simulations can be understood and predicted in a unified way from knowledge of the PEL of the system.

Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

CERN Document Server

Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

2000-01-01

We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

Fundamentals of amorphous solids structure and properties

CERN Document Server

Stachurski, Zbigniew H

2014-01-01

Long awaited, this textbook fills the gap for convincing concepts to describe amorphous solids. Adopting a unique approach, the author develops a framework that lays the foundations for a theory of amorphousness. He unravels the scientific mysteries surrounding the topic, replacing rather vague notions of amorphous materials as disordered crystalline solids with the well-founded concept of ideal amorphous solids. A classification of amorphous materials into inorganic glasses, organic glasses, glassy metallic alloys, and thin films sets the scene for the development of the model of ideal amorph

Physics of amorphous metals

CERN Document Server

Kovalenko, Nikolai P; Krey, Uwe

2008-01-01

The discovery of bulk metallic glasses has led to a large increase in the industrial importance of amorphous metals, and this is expected to continue. This book is the first to describe the theoretical physics of amorphous metals, including the important theoretical development of the last 20 years.The renowned authors stress the universal aspects in their description of the phonon or magnon low-energy excitations in the amorphous metals, e.g. concerning the remarkable consequences of the properties of these excitations for the thermodynamics at low and intermediate temperatures. Tunneling

Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

Science.gov (United States)

Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

2017-09-01

The presence of an amorphous surface layer that coats a crystalline core has been proposed for many biominerals, including bone mineral. In parallel, transient amorphous precursor phases have been proposed in various biomineralization processes, including bone biomineralization. Here we propose a methodology to investigate the origin of these amorphous environments taking the bone tissue as a key example. This study relies on the investigation of a bone tissue sample and its comparison with synthetic calcium phosphate samples, including a stoichiometric apatite, an amorphous calcium phosphate sample, and two different biomimetic apatites. To reveal if the amorphous environments in bone originate from an amorphous surface layer or a transient amorphous precursor phase, a combined solid-state nuclear magnetic resonance (NMR) experiment has been used. The latter consists of a double cross polarization 1 H→ 31 P→ 1 H pulse sequence followed by a 1 H magnetization exchange pulse sequence. The presence of an amorphous surface layer has been investigated through the study of the biomimetic apatites; while the presence of a transient amorphous precursor phase in the form of amorphous calcium phosphate particles has been mimicked with the help of a physical mixture of stoichiometric apatite and amorphous calcium phosphate. The NMR results show that the amorphous and the crystalline environments detected in our bone tissue sample belong to the same particle. The presence of an amorphous surface layer that coats the apatitic core of bone apatite particles has been unambiguously confirmed, and it is certain that this amorphous surface layer has strong implication on bone tissue biogenesis and regeneration. Questions still persist on the structural organization of bone and biomimetic apatites. The existing model proposes a core/shell structure, with an amorphous surface layer coating a crystalline bulk. The accuracy of this model is still debated because amorphous calcium

Amorphization of thiamine chloride hydrochloride: A study of the crystallization inhibitor properties of different polymers in thiamine chloride hydrochloride amorphous solid dispersions.

Science.gov (United States)

Arioglu-Tuncil, Seda; Bhardwaj, Vivekanand; Taylor, Lynne S; Mauer, Lisa J

2017-09-01

Amorphous solid dispersions of thiamine chloride hydrochloride (THCl) were created using a variety of polymers with different physicochemical properties in order to investigate how effective the various polymers were as THCl crystallization inhibitors. THCl:polymer dispersions were prepared by lyophilizing solutions of THCl and amorphous polymers (guar gum, pectin, κ-carrageenan, gelatin, and polyvinylpyrrolidone (PVP)). These dispersions were stored at select temperature (25 and 40°C) and relative humidity (0, 23, 32, 54, 75, and 85% RH) conditions and monitored at different time points using powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FTIR), and differential scanning calorimetry (DSC). Moisture sorption isotherms of all samples were also obtained. Initially amorphous THCl was produced in the presence of ≥40% w/w pectin, κ-carrageenan, gelatin, and guar gum or ≥60% w/w PVP. Trends in polymer THCl crystallization inhibition (pectin≥κ-carrageenan>gelatin>guar gum≫PVP) were primarily based on the ability of the polymer to interact with THCl via hydrogen bonding and/or ionic interactions. The onset of THCl crystallization from the amorphous dispersions was also related to storage conditions. THCl remained amorphous at low RH conditions (0 and 23% RH) in all 1:1 dispersions except THCl:PVP. THCl crystallized in some dispersions below the glass transition temperature (T g ) but remained amorphous in others at T~T g . At high RHs (75 and 85% RH), THCl crystallized within one day in all samples. Given the ease of THCl amorphization in the presence of a variety of polymers, even at higher vitamin concentrations than would be found in foods, it is likely that THCl is amorphous in many low moisture foods. Copyright © 2017 Elsevier Ltd. All rights reserved.

Structure and low temperature thermal relaxation of amorphized germanium

International Nuclear Information System (INIS)

Glover, C.J.; Ridgway, M.C.; Byrne, A.P.; Clerc, C.; Hansen, J.L.; Larsen, A.N.

1999-01-01

The structure of implantation-induced damage in amorphized Ge has been investigated using high resolution extended x-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method, allowing a full reconstruction of the interatomic distance distribution (RDF). For the case of MeV implantation at -196 deg C, for an ion-dose range extending two orders of magnitude beyond that required for amorphization, a dose-dependent asymmetric RDF was determined for the amorphous phase including an increase in bond-length as a function of ion dose. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid, asymmetry and width of the RDF. Such an effect was attributed to the formation (and subsequent annihilation) of three- and five-fold Co-ordinated atoms, comparing favourably to theoretical simulations of the structure of a-Ge

Amorphous nanoparticles — Experiments and computer simulations

International Nuclear Information System (INIS)

Hoang, Vo Van; Ganguli, Dibyendu

2012-01-01

The data obtained by both experiments and computer simulations concerning the amorphous nanoparticles for decades including methods of synthesis, characterization, structural properties, atomic mechanism of a glass formation in nanoparticles, crystallization of the amorphous nanoparticles, physico-chemical properties (i.e. catalytic, optical, thermodynamic, magnetic, bioactivity and other properties) and various applications in science and technology have been reviewed. Amorphous nanoparticles coated with different surfactants are also reviewed as an extension in this direction. Much attention is paid to the pressure-induced polyamorphism of the amorphous nanoparticles or amorphization of the nanocrystalline counterparts. We also introduce here nanocomposites and nanofluids containing amorphous nanoparticles. Overall, amorphous nanoparticles exhibit a disordered structure different from that of corresponding bulks or from that of the nanocrystalline counterparts. Therefore, amorphous nanoparticles can have unique physico-chemical properties differed from those of the crystalline counterparts leading to their potential applications in science and technology.

High speed PVD thermal barrier coatings

Energy Technology Data Exchange (ETDEWEB)

Beele, W. [Sulzer Metco Coatings BV (Netherlands); Eschendorff, G. [Sulzer Metco Coatings BV (Netherlands); Eldim BV (Netherlands)

2006-07-15

The high speed PVD process (HS-PVD) combines gas phase coating synthesis with high deposition rates. The process has been demonstrated for high purity YSZ deposited as a chemically bonded top thermal barrier with columnar structure of EB-PVD features. The process can manufacture EB-PVD like coatings that match in regards to their TGO-formation and columnar structure. Coatings with a columnar structure formed by individual columns of 1/4 of the diameter of a classical EB-PVD type TBC have been deposited. These coatings have the potential to prove a significant reduction in thermal conductivity and in erosion performance. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

High speed PVD thermal barrier coatings

International Nuclear Information System (INIS)

Beele, W.; Eschendorff, G.

2006-01-01

The high speed PVD process (HS-PVD) combines gas phase coating synthesis with high deposition rates. The process has been demonstrated for high purity YSZ deposited as a chemically bonded top thermal barrier with columnar structure of EB-PVD features. The process can manufacture EB-PVD like coatings that match in regards to their TGO-formation and columnar structure. Coatings with a columnar structure formed by individual columns of 1/4 of the diameter of a classical EB-PVD type TBC have been deposited. These coatings have the potential to prove a significant reduction in thermal conductivity and in erosion performance. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

A fax-machine amorphous silicon sensor for X-ray detection

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

1996-10-01

Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

Science.gov (United States)

Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2015-02-18

Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

Solid-state amorphization of SmFe{sub 3} by hydrogenation

Energy Technology Data Exchange (ETDEWEB)

Mueller, K.H.; Kubis, M.; Handstein, A.; Gutfleisch, O.

2000-05-10

Hydrogen-induced amorphization (HIA) has received much attention as a method for the preparation of amorphous compounds since its discovery by Yeh et al. Meanwhile it has been observed for a large number of intermetallic compounds with C15, C23, B8{sub 2}, DO{sub 19} and L1{sub 2} structures. E.G. the C15 Laves-type compounds (MgCu{sub 2}-type structure) of rare earth (R) - transition metal (T) compounds RT{sub 2} show HIA for R = Y, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho and Er. Aoki et al. postulated that new amorphizing compounds can be expected at high hydrogen pressures. In this work, the structural changes of SmFe{sub 3} (PuNi{sub 3}-type structure) during heating in high hydrogen pressures are reported.

High speed cinematography of cracks spreading under failure of amorphous metallic alloys

International Nuclear Information System (INIS)

Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V.; Shibkov, A.A.

1997-01-01

The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.)

Performance of WCN diffusion barrier for Cu multilevel interconnects

Science.gov (United States)

Lee, Seung Yeon; Ju, Byeong-Kwon; Kim, Yong Tae

2018-04-01

The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100 µΩ cm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.

High-Sulfur-Vacancy Amorphous Molybdenum Sulfide as a High Current Electrocatalyst in Hydrogen Evolution

KAUST Repository

Lu, Ang-Yu

2016-08-31

The remote hydrogen plasma is able to create abundant S-vacancies on amorphous molybdenum sulfide (a-MoSx) as active sites for hydrogen evolution. The results demonstrate that the plasma-treated a-MoSx exhibits superior performance and higher stability than Pt in a proton exchange membrane based electrolyzers measurement as a proof-of-concept of industrial application.

Amorphous iron (II) carbonate

DEFF Research Database (Denmark)

Sel, Ozlem; Radha, A.V.; Dideriksen, Knud

2012-01-01

Abstract The synthesis, characterization and crystallization energetics of amorphous iron (II) carbonate (AFC) are reported. AFC may form as a precursor for siderite (FeCO3). The enthalpy of crystallization (DHcrys) of AFC is similar to that of amorphous magnesium carbonate (AMC) and more...

Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films

International Nuclear Information System (INIS)

Lipeles, R.A.; Leung, M.S.; Thiede, D.A.

1990-01-01

This paper reports on barium silicate and barium aluminate films that were studied for use as chemical reaction and diffusion barrier layers for Y 1 Ba 2 Cu 3 O 7-x (YBC) deposited on sapphire and fused silica substrates by the sol-gel technique. Depth profiling by secondary ion mass spectrometry (SIMS) was used to characterize the abruptness of the interfaces between the barrier layer and the YBC film as well as the barrier layer and the substrate. The authors found that barium aluminate films reacted with fused silica substrates forming a coarse-grained barium silicate phase. Barium silicate, BaSiO 3 , also reacted with silica substrates forming a broad, amorphous reaction zone containing some BaSi 2 O 5 . Although barium silicate and barium aluminate deposited on sapphire formed a BaAl 12 O 19 phase, they provided a barrier to barium diffusion from sol-gel deposited YBC. Crystalline barium aluminate grown on c-cut sapphire was the most effective barrier layer for the growth of YBC films; compositionally uniform YBC films were made similar to that grown on strontium titanate substrates. These data show that chemically stable, crystalline films are more effective barrier layers than amorphous films

Amorphization of ceramics by ion beams

International Nuclear Information System (INIS)

McHargue, C.J.; Farlow, G.C.; White, C.W.; Williams, J.M.; Appleton, B.R.; Naramoto, H.

1984-01-01

The influence of the implantation parameters fluence, substrate temperature, and chemical species on the formation of amorphous phases in Al 2 O 3 and α-SiC was studied. At 300 0 K, fluences in excess of 10 17 ions.cm -2 were generally required to amorphize Al 2 O 3 ; however, implantation of zirconium formed the amorphous phase at a fluence of 4 x 10 16 Zr.cm -2 . At 77 0 K, the threshold fluence was lowered to about 2 x 10 15 Cr.cm -2 . Single crystals of α-SiC were amorphized at 300 0 K by a fluence of 2 x 10 14 Cr.cm -2 or 1 x 10 15 N.cm -2 . Implantation at 1023 0 K did not produce the amorphous phase in SiC. The micro-indentation hardness of the amorphous material was about 60% of that of the crystalline counterpart

Amorphization within the tablet

DEFF Research Database (Denmark)

Doreth, Maria; Hussein, Murtadha Abdul; Priemel, Petra A.

2017-01-01

, the feasibility of microwave irradiation to prepare amorphous solid dispersions (glass solutions) in situ was investigated. Indomethacin (IND) and polyvinylpyrrolidone K12 (PVP) were tableted at a 1:2 (w/w) ratio. In order to study the influence of moisture content and energy input on the degree of amorphization......, tablet formulations were stored at different relative humidity (32, 43 and 54% RH) and subsequently microwaved using nine different power-time combinations up to a maximum energy input of 90 kJ. XRPD results showed that up to 80% (w/w) of IND could be amorphized within the tablet. mDSC measurements...

Synthesis and densification of Cu-coated Ni-based amorphous composite powders

International Nuclear Information System (INIS)

Kim, Yong-Jin; Kim, Byoung-Kee; Kim, Jin-Chun

2007-01-01

Spherical Ni 57 Zr 20 Ti 16 Si 2 Sn 3 (numbers indicate at.%) amorphous powders were produced by the gas atomization process, and ductile Cu phase was coated on the Ni-based amorphous powders by the spray drying process in order to increase the ductility of the consolidated amorphous alloy. The characteristics of the as-prepared powders and the consolidation behaviors of Cu-coated Ni-based amorphous composite powders were investigated. The atomization was conducted at 1450 deg. C under the vacuum of 10 -2 mbar. The Ni-based amorphous powders and Cu nitrate solution were mixed and sprayed at temperature of 130 deg. C. After spray drying and reduction treatment, the sub-micron size Cu powders were coated successfully on the surface of the atomized Ni amorphous powders. The spark plasma sintering process was applied to study the densification behavior of the Cu-coated composite powders. Thickness of the Cu layer was less than 1 μm. The compacts obtained by SPS showed high relative density of over 98% and its hardness was over 800 Hv

Crystallization kinetics and magnetic properties of FeSiCr amorphous alloy powder cores

Energy Technology Data Exchange (ETDEWEB)

Xu, Hu-ping [School of Logistics Engineering, Wuhan University of Technology, Wuhan 430063 (China); Wang, Ru-wu, E-mail: ruwuwang@hotmail.com [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China); College of Materials Science and Metallurgical Engineering, Wuhan University of Science and Technology, Wuhan 430081 (China); Wei, Ding [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Zeng, Chun [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China)

2015-07-01

The crystallization kinetics of FeSiCr amorphous alloy, characterized by the crystallization activation energy, Avrami exponent and frequency factor, was studied by non-isothermal differential scanning calorimetric (DSC) measurements. The crystallization activation energy and frequency factor of amorphous alloy calculated from Augis–Bennett model were 476 kJ/mol and 5.5×10{sup 18} s{sup −1}, respectively. The Avrami exponent n was calculated to be 2.2 from the Johnson–Mehl–Avrami (JMA) equation. Toroid-shaped Fe-base amorphous powder cores were prepared from the commercial FeSiCr amorphous alloy powder and subsequent cold pressing using binder and insulation. The characteristics of FeSiCr amorphous alloy powder and the effects of compaction pressure and insulation content on the magnetic properties, i.e., effective permeability μ{sub e}, quality factor Q and DC-bias properties of FeSiCr amorphous alloy powder cores, were investigated. The FeSiCr amorphous alloy powder cores exhibit a high value of quality factor and a stable permeability in the frequency range up to 1 MHz, showing superior DC-bias properties with a “percent permeability” of more than 82% at H=100 Oe. - Highlights: • The crystallization kinetics of FeSiCr amorphous alloy was investigated. • The FeSiCr powder cores exhibit a high value of Q and a stable permeability. • The FeSiCr powder cores exhibit superior DC-bias properties.

High-resolution observation of phase contrast at 1MeV. Amorphous or crystalline objects

International Nuclear Information System (INIS)

Bourret, A.; Desseaux, J.

1975-01-01

Many authors have stressed the possibilities of high voltage to improve resolution, but owing to numerous experimental difficulties the resolution limit at 1MeV, which lies around 1A for conventional lenses, has so far been unattainable. Thus the phase contrast at 1MeV has not been studied on evaporated objects. On the other hand the fringes of crystal planes have been observed at 1MeV. the CEN-G microscope having been considerably modified it has been possible to observe the phase contrast of amorphous or crystalline objects [fr

Characterization of the hidden glass transition of amorphous cyclomaltoheptaose.

Science.gov (United States)

Tabary, Nicolas; Mahieu, Aurélien; Willart, Jean-François; Dudognon, Emeline; Danède, Florence; Descamps, Marc; Bacquet, Maryse; Martel, Bernard

2011-10-18

An amorphous solid of cyclomaltoheptaose (β-cyclodextrin, β-CD) was formed by milling its crystalline form using a high-energy planetary mill at room temperature. The glass transition of this amorphous solid was found to occur above the thermal degradation point of the material preventing its direct observation and thus its full characterization. The corresponding glass transition temperature (T(g)) and the ΔC(p) at T(g) have, however, been estimated by extrapolation of T(g) and ΔC(p) of closely related amorphous compounds. These compounds include methylated β-CD with different degrees of substitution and molecular alloys obtained by co-milling β-CD and methylated β-CD (DS 1.8) at different ratios. The physical characterization of the amorphous states have been performed by powder X-ray diffraction and differential scanning calorimetry, while the chemical integrity of β-CD upon milling was checked by NMR spectroscopy and mass spectrometry. Copyright © 2011 Elsevier Ltd. All rights reserved.

Health hazards due to the inhalation of amorphous silica

Energy Technology Data Exchange (ETDEWEB)

Merget, R.; Bruening, T. [Research Institute for Occupational Medicine (BGFA), Bochum (Germany); Bauer, T. [Bergmannsheil, University Hospital, Department of Internal Medicine, Division of Pneumonology, Allergology and Sleep Medicine, Bochum (Germany); Kuepper, H.U.; Breitstadt, R. [Degussa-Huels Corp., Wesseling (Germany); Philippou, S. [Department of Pathology, Augusta Krankenanstalten, Bochum (Germany); Bauer, H.D. [Research Institute for Hazardous Substances (IGF), Bochum (Germany)

2002-01-01

Occupational exposure to crystalline silica dust is associated with an increased risk for pulmonary diseases such as silicosis, tuberculosis, chronic bronchitis, chronic obstructive pulmonary disease (COPD) and lung cancer. This review summarizes the current knowledge about the health effects of amorphous (non-crystalline) forms of silica. The major problem in the assessment of health effects of amorphous silica is its contamination with crystalline silica. This applies particularly to well-documented pneumoconiosis among diatomaceous earth workers. Intentionally manufactured synthetic amorphous silicas are without contamination of crystalline silica. These synthetic forms may be classified as (1) wet process silica, (2) pyrogenic (''thermal'' or ''fumed'') silica, and (3) chemically or physically modified silica. According to the different physico-chemical properties, the major classes of synthetic amorphous silica are used in a variety of products, e.g. as fillers in the rubber industry, in tyre compounds, as free-flow and anti-caking agents in powder materials, and as liquid carriers, particularly in the manufacture of animal feed and agrochemicals; other uses are found in toothpaste additives, paints, silicon rubber, insulation material, liquid systems in coatings, adhesives, printing inks, plastisol car undercoats, and cosmetics. Animal inhalation studies with intentionally manufactured synthetic amorphous silica showed at least partially reversible inflammation, granuloma formation and emphysema, but no progressive fibrosis of the lungs. Epidemiological studies do not support the hypothesis that amorphous silicas have any relevant potential to induce fibrosis in workers with high occupational exposure to these substances, although one study disclosed four cases with silicosis among subjects exposed to apparently non-contaminated amorphous silica. Since the data have been limited, a risk of chronic bronchitis, COPD or

Health hazards due to the inhalation of amorphous silica

International Nuclear Information System (INIS)

Merget, R.; Bruening, T.; Bauer, T.; Kuepper, H.U.; Breitstadt, R.; Philippou, S.; Bauer, H.D.

2002-01-01

Occupational exposure to crystalline silica dust is associated with an increased risk for pulmonary diseases such as silicosis, tuberculosis, chronic bronchitis, chronic obstructive pulmonary disease (COPD) and lung cancer. This review summarizes the current knowledge about the health effects of amorphous (non-crystalline) forms of silica. The major problem in the assessment of health effects of amorphous silica is its contamination with crystalline silica. This applies particularly to well-documented pneumoconiosis among diatomaceous earth workers. Intentionally manufactured synthetic amorphous silicas are without contamination of crystalline silica. These synthetic forms may be classified as (1) wet process silica, (2) pyrogenic (''thermal'' or ''fumed'') silica, and (3) chemically or physically modified silica. According to the different physico-chemical properties, the major classes of synthetic amorphous silica are used in a variety of products, e.g. as fillers in the rubber industry, in tyre compounds, as free-flow and anti-caking agents in powder materials, and as liquid carriers, particularly in the manufacture of animal feed and agrochemicals; other uses are found in toothpaste additives, paints, silicon rubber, insulation material, liquid systems in coatings, adhesives, printing inks, plastisol car undercoats, and cosmetics. Animal inhalation studies with intentionally manufactured synthetic amorphous silica showed at least partially reversible inflammation, granuloma formation and emphysema, but no progressive fibrosis of the lungs. Epidemiological studies do not support the hypothesis that amorphous silicas have any relevant potential to induce fibrosis in workers with high occupational exposure to these substances, although one study disclosed four cases with silicosis among subjects exposed to apparently non-contaminated amorphous silica. Since the data have been limited, a risk of chronic bronchitis, COPD or emphysema cannot be excluded. There is no

Amorphous titanium-oxide supercapacitors

Science.gov (United States)

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-10-01

The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

High speed cinematography of cracks spreading under failure of amorphous metallic alloys

Energy Technology Data Exchange (ETDEWEB)

Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V. [AN Ukrainskoj SSR, Kharkov (Ukraine). Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur; Shibkov, A.A.

1997-08-01

The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.). 4 refs.

Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Morales-Masis, M.; de Nicolas, S.M.; Holovský, Jakub; De Wolf, S.; Ballif, C.

2015-01-01

Roč. 5, č. 5 (2015), s. 1340-1347 ISSN 2156-3381 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : solar cells * amorphous * ITO * TCO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2015

Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

Energy Technology Data Exchange (ETDEWEB)

Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

1985-04-01

The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

Characterization of amorphous and nanocrystalline carbon films

International Nuclear Information System (INIS)

Chu, Paul K.; Li Liuhe

2006-01-01

Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

Nature of amorphous polymorphism of water

International Nuclear Information System (INIS)

Koza, M.M.; Schober, H.; Hansen, T.; Geil, B.; Winkel, K.; Koehler, C.; Scheuermann, M.; Czeschka, F.

2005-01-01

We report elastic and inelastic neutron scattering experiments on different amorphous ice modifications. It is shown that an amorphous structure (HDA ' ) indiscernible from the high-density phase (HDA), obtained by compression of crystalline ice, can be formed from the very high-density phase (vHDA) as an intermediate stage of the transition of vHDA into its low-density modification (LDA ' ). Both HDA and HDA ' exhibit comparable small-angle scattering signals characterizing them as structures heterogeneous on a length scale of a few nanometers. The homogeneous structures are the initial and final transition stages vHDA and LDA ' , respectively. Despite their apparent structural identity on a local scale, HDA and HDA ' differ in their transition kinetics explored by in situ experiments. The activation energy of the vHDA-to-LDA ' transition is at least 20 kJ/mol higher than the activation energy of the HDA-to-LDA transition

Improving Reversible Capacities of High-Surface Lithium Insertion Materials – The Case of Amorphous TiO2

International Nuclear Information System (INIS)

Ganapathy, Swapna; Basak, Shibabrata; Lefering, Anton; Rogers, Edith; Zandbergen, Henny W.; Wagemaker, Marnix

2014-01-01

Chemisorbed water and solvent molecules and their reactivity with components from the electrolyte in high-surface nano-structured electrodes remains a contributing factor toward capacity diminishment on cycling in lithium ion batteries due to the limit in maximum annealing temperature. Here, we report a marked improvement in the capacity retention of amorphous TiO 2 by the choice of preparation solvent, control of annealing temperature, and the presence of surface functional groups. Careful heating of the amorphous TiO 2 sample prepared in acetone under vacuum lead to complete removal of all molecular solvent and an improved capacity retention of 220 mAh/g over 50 cycles at a C/10 rate. Amorphous TiO 2 when prepared in ethanol and heated under vacuum showed an even better capacity retention of 240 mAh/g. From Fourier transform infra-red spectroscopy and electron energy loss spectroscopy measurements, the improved capacity is attributed to the complete removal of ethanol and the presence of very small fractions of residual functional groups coordinated to oxygen-deficient surface titanium sites. These displace the more reactive chemisorbed hydroxyl groups, limiting reaction with components from the electrolyte and possibly enhancing the integrity of the solid electrolyte interface. The present research provides a facile strategy to improve the capacity retention of nano-structured electrode materials.

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges

Science.gov (United States)

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Amorphous MoS{sub x} on CdS nanorods for highly efficient photocatalytic hydrogen evolution

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaofang; Tang, Chaowan; Zheng, Qun; Shao, Yu; Li, Danzhen, E-mail: dzli@fzu.edu.cn

2017-02-15

Loading cocatalyst on semiconductors was crucially necessary for improving the photocatalytic hydrogen evolution. Amorphous MoS{sub x} as a novel and noble metal-free cocatalyst was loaded on CdS nanorods by a simple photodeposition method. Efficient hydrogen evolution with amount of 15 mmol h{sup −1} g{sup −1} was observed over the MoS{sub x} modified CdS nanorods, which was about 6 times higher than that by using Pt as cocatalyst. Meanwhile, with MoS{sub x} cocatalyst, the efficiency of CdS nanorods was superior to that of CdS nanoparticles and bulk CdS. No deactivation could be observed in the efficiency of MoS{sub x} modified CdS nanorods under irradiation for successive 10 h. Further experimental results indicated that the efficient electrons transfer, low overpotential of hydrogen evolution and active S atoms over the MoS{sub x} modified CdS nanorods were responsible for the higher efficiency. Our results provided guidance for synthesizing noble metal-free materials as cocatalyst for photocatalytic hydrogen evolution. - Graphical abstract: Photodeposition of amorphous MoS{sub x} on CdS nanorods for highly efficient photocatalytic hydrogen evolution. - Highlights: • Amorphous MoSx cocatalyst was loaded on CdS NRs by a simple photodeposition. • MoS{sub x}/CdS NRs exhibited 6 times higher hydrogen evolution efficiency than Pt/CdS NRs. • The hydrogen evolution of MoS{sub x}/CdS NRs linearly increased with prolonging time. • Lower overpotential and efficient electron transfer were observed over MoS{sub x}/CdS NRs.

High density amorphous ice and its phase transition to ice XII

International Nuclear Information System (INIS)

Kohl, I.

2001-07-01

1998 Lobban et al. reported the neutron diffraction data of a new phase of ice, called ice XII, which formed at 260 K on compression of water within the domain of ice V at a pressure of 0.5 GPa. Surprisingly ice XII forms as an incidental product in the preparation of high-density amorphous ice (HDA) on compression of hexagonale ice (ice Ih) at 77 K up to pressures = 1.3 GPa. A decisive experimental detail is the use of an indium container: when compressing ice Ih in a pressure vessel with indium linings, then reproducibly HDA (high density amorphous ice) forms, but without indium randomly scattered relative amounts of ice XII and HDA form. Ice XII forms on compression of ice Ih at 77 K only via HDA, and not directly from ice Ih. Its formation requires a sudden pronounced apparent pressure drop of ca 0.18 GPa at pressures ca 1.1 GPa. These apparent pressure drops can be caused by buildup friction between the piston and the pressure vessel and its sudden release on further compression. I propose that shock-waves generated by apparent pressure drops cause transient local heating and that this induces nucleation and crystal growth. A specific reproducible method to prepare ice XII is heating HDA in a pressure vessel with indium linings at constant pressures (or constant volume). The ice XII (meta-)stability domain extends between ca 158 and 212 K from ca 0.7 to ca 1.5 GPa. DSC (differential scanning calorimetry) and x-ray powder diffraction revealed, that on heating at atmospheric pressure ice XII transforms directly into cubic ice (ice Ic) at 154 K (heating rate 10 K min - 1) and not into an amorphous form before transition to ice Ic. The enthalpy of the ice XII - ice Ic transition is -1.21 ± 0.07 kJ mol -1 . An estimation of the Gibbs free energy at atmospheric pressure and about 140 K results that ice XII is thermodynamically more stable than ice VI. In the heating curve of ice XII a reversible endothermic step can be found at the onset temperature (heating rate

Elastic characteristics and microplastic deformation of amorphous alloys on iron base

International Nuclear Information System (INIS)

Pol'dyaeva, G.P.; Zakharov, E.K.; Ovcharov, V.P.; Tret'yakov, B.N.

1983-01-01

Investigation results of elasticity and microplasticity properties (modulus of normal elasticity E, elasticity limit σsub(0.01) and yield limit σsub(0.2)) of three amorphous alloys on iron base Fe 80 B 20 , Fe 70 Cr 10 B 20 and Fe 70 Cr 5 Ni 5 B 20 are given. Amorphous band of the alloys is obtained using the method of melt hardening. It is shown that amorphous alloys on iron base possess high elasticity and yield limits and hardness and are very perspective for the use as spring materials

Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

Science.gov (United States)

Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

2014-01-01

Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase.

A Molecular-Level View of the Physical Stability of Amorphous Solid Dispersions

Science.gov (United States)

Yuan, Xiaoda

Many pharmaceutical compounds being developed in recent years are poorly soluble in water. This has led to insufficient oral bioavailability of many compounds in vitro. The amorphous formulation is one of the promising techniques to increase the oral bioavailability of these poorly water-soluble compounds. However, an amorphous drug substance is inherently unstable because it is a high energy form. In order to increase the physical stability, the amorphous drug is often formulated with a suitable polymer to form an amorphous solid dispersion. Previous research has suggested that the formation of an intimately mixed drug-polymer mixture contributes to the stabilization of the amorphous drug compound. The goal of this research is to better understand the role of miscibility, molecular interactions and mobility on the physical stability of amorphous solid dispersions. Methods were developed to detect different degrees of miscibility on nanometer scale and to quantify the extent of hydrogen-bonding interactions between the drug and the polymer. Miscibility, hydrogen-bonding interactions and molecular mobility were correlated with physical stability during a six-month period using three model systems. Overall, this research provides molecular-level insights into many factors that govern the physical stability of amorphous solid dispersions which can lead to a more effective design of stable amorphous formulations.

A new method for studying the structure relaxation of amorphous matters

International Nuclear Information System (INIS)

Cao Xiaowen

1989-11-01

A new method for studying the structure relaxation of amorphous matters by Hall effect is proposed. The structure relaxation of the metal-type amorphous InSb has been experimentally studied. The experimental results show that this method is highly sensitive to the structure relaxation, and the mechanism of structure relaxation can be observed

Origins of amorphous interstellar grains

International Nuclear Information System (INIS)

Hasegawa, H.

1984-01-01

The existence of amorphous interstellar grains has been suggested from infrared observations. Some carbon stars show the far infrared emission with a lambda -1 wavelength dependence. Far infrared emission supposed to be due to silicate grains often show the lambda -1 wavelength dependence. Mid infrared spectra around 10 μm have broad structure. These may be due to the amorphous silicate grains. The condition that the condensed grains from the cosmic gas are amorphous is discussed. (author)

Role of structural barriers for carotenoid bioaccessibility upon high pressure homogenization.

Science.gov (United States)

Palmero, Paola; Panozzo, Agnese; Colle, Ines; Chigwedere, Claire; Hendrickx, Marc; Van Loey, Ann

2016-05-15

A specific approach to investigate the effect of high pressure homogenization on the carotenoid bioaccessibility in tomato-based products was developed. Six different tomato-based model systems were reconstituted in order to target the specific role of the natural structural barriers (chromoplast substructure/cell wall) and of the phases (soluble/insoluble) in determining the carotenoid bioaccessibility and viscosity changes upon high pressure homogenization. Results indicated that in the absence of natural structural barriers (carotenoid enriched oil), the soluble and insoluble phases determined the carotenoid bioaccessibility upon processing whereas, in their presence, these barriers governed the bioaccessibility. Furthermore, it was shown that the increment of the viscosity upon high pressure homogenization is determined by the presence of insoluble phase, however, this result was related to the initial ratio of the soluble:insoluble phases in the system. In addition, no relationship between the changes in viscosity and carotenoid bioaccessibility upon high pressure homogenization was found. Copyright © 2015 Elsevier Ltd. All rights reserved.

Recent advances in co-amorphous drug formulations

DEFF Research Database (Denmark)

Dengale, Swapnil Jayant; Grohganz, Holger; Rades, Thomas

2016-01-01

with other amorphous stabilization techniques. Because of this, several research groups started to investigate the co-amorphous formulation approach, resulting in an increasing amount of scientific publications over the last few years. This study provides an overview of the co-amorphous field and its recent......Co-amorphous drug delivery systems have recently gained considerable interest in the pharmaceutical field because of their potential to improve oral bioavailability of poorly water-soluble drugs through drug dissolution enhancement as a result of the amorphous nature of the material. A co...... findings. In particular, we investigate co-amorphous formulations from the viewpoint of solid dispersions, describe their formation and mechanism of stabilization, study their impact on dissolution and in vivo performance and briefly outline the future potentials....

Communication: Disorder-suppressed vibrational relaxation in vapor-deposited high-density amorphous ice

Science.gov (United States)

Shalit, Andrey; Perakis, Fivos; Hamm, Peter

2014-04-01

We apply two-dimensional infrared spectroscopy to differentiate between the two polyamorphous forms of glassy water, low-density (LDA) and high-density (HDA) amorphous ices, that were obtained by slow vapor deposition at 80 and 11 K, respectively. Both the vibrational lifetime and the bandwidth of the 1-2 transition of the isolated OD stretch vibration of HDO in H2O exhibit characteristic differences when comparing hexagonal (Ih), LDA, and HDA ices, which we attribute to the different local structures - in particular the presence of interstitial waters in HDA ice - that cause different delocalization lengths of intermolecular phonon degrees of freedom. Moreover, temperature dependent measurements show that the vibrational lifetime closely follows the structural transition between HDA and LDA phases.

Nature of phase transitions in crystalline and amorphous GeTe-Sb2Te3 phase change materials.

Science.gov (United States)

Kalkan, B; Sen, S; Clark, S M

2011-09-28

The thermodynamic nature of phase stabilities and transformations are investigated in crystalline and amorphous Ge(1)Sb(2)Te(4) (GST124) phase change materials as a function of pressure and temperature using high-resolution synchrotron x-ray diffraction in a diamond anvil cell. The phase transformation sequences upon compression, for cubic and hexagonal GST124 phases are found to be: cubic → amorphous → orthorhombic → bcc and hexagonal → orthorhombic → bcc. The Clapeyron slopes for melting of the hexagonal and bcc phases are negative and positive, respectively, resulting in a pressure dependent minimum in the liquidus. When taken together, the phase equilibria relations are consistent with the presence of polyamorphism in this system with the as-deposited amorphous GST phase being the low entropy low-density amorphous phase and the laser melt-quenched and high-pressure amorphized GST being the high entropy high-density amorphous phase. The metastable phase boundary between these two polyamorphic phases is expected to have a negative Clapeyron slope. © 2011 American Institute of Physics

Short, intermediate and long range order in amorphous ices

Science.gov (United States)

Martelli, Fausto; Torquato, Salvatore; Giovanbattista, Nicolas; Car, Roberto

Water exhibits polyamorphism, i.e., it exists in more than one amorphous state. The most common forms of glassy water are the low-density amorphous (LDA) and the high-density amorphous (HDA) ices. LDA, the most abundant form of ice in the Universe, transforms into HDA upon isothermal compression. We model the transformation of LDA into HDA under isothermal compression with classical molecular dynamics simulations. We analyze the molecular structures with a recently introduced scalar order metric to measure short and intermediate range order. In addition, we rank the structures by their degree of hyperuniformity, i.e.,the extent to which long range density fluctuations are suppressed. F.M. and R.C. acknowledge support from the Department of Energy (DOE) under Grant No. DE-SC0008626.

Amorphous gallium oxide grown by low-temperature PECVD

KAUST Repository

Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aï cha; Dö beli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe

2018-01-01

demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband

Elimination of two level fluctuators in superconducting quantum bits by an epitaxial tunnel barrier

International Nuclear Information System (INIS)

Oh, Seongshik; Cicak, Katarina; Kline, Jeffrey S.; Sillanpaeae, Mika A.; Osborn, Kevin D.; Whittaker, Jed D.; Simmonds, Raymond W.; Pappas, David P.

2006-01-01

Quantum computing based on Josephson junction technology is considered promising due to its scalable architecture. However, decoherence is a major obstacle. Here, we report evidence for improved Josephson quantum bits (qubits) using a single-crystal Al 2 O 3 tunnel barrier. We have found an ∼80% reduction in the density of the spectral splittings that indicate the existence of two-level fluctators (TLFs) in amorphous tunnel barriers. The residual ∼20% TLFs can be attributed to interfacial effects that may be further reduced by different electrode materials. These results show that decoherence sources in the tunnel barrier of Josephson qubits can be identified and eliminated

Colors and the evolution of amorphous galaxies

International Nuclear Information System (INIS)

Gallagher, J.S. III; Hunter, D.A.

1987-01-01

UBVRI and H-alpha photometric observations are presented for 16 amorphous galaxies and a comparison sample of Magellanic irregular (Im) and Sc spiral galaxies. These data are analyzed in terms of star-formation rates and histories in amorphous galaxies. Amorphous galaxies have mean global colors and star-formation rates per unit area that are similar to those in giant Im systems, despite differences in spatial distributions of star-forming centers in these two galactic structural classes. Amorphous galaxies differ from giant Im systems in having somewhat wider scatter in relationships between B - V and U - B colors, and between U - B and L(H-alpha)/L(B). This scatter is interpreted as resulting from rapid variations in star-formation rates during the recent past, which could be a natural consequence of the concentration of star-forming activity into centrally located, supergiant young stellar complexes in many amorphous galaxies. While the unusual spatial distribution and intensity of star formation in some amorphous galaxies is due to interactions with other galaxies, several amorphous galaxies are relatively isolated and thus the processes must be internal. The ultimate evolutionary fate of rapidly evolving amorphous galaxies remains unknown. 77 references

Identifying low and high density amorphous phases during zeolite amorphisation using small and wide angle X-ray scattering

International Nuclear Information System (INIS)

Meneau, F.; Greaves, G.N.

2005-01-01

In situ experiments following the thermal amorphisation of zeolites reveal massive increases in small angle X-ray scattering (SAXS), persisting well beyond the stage where wide angle X-ray scattering (WAXS) can detect that any crystalline phase is present. This heterogeneity in the amorphised phase is attributed to the transition from a low density amorphous phase (LDA) to a high density amorphous phase (HDA) at the glass transition. The fractions of zeolite, LDA and HDA phases obtained from SAXS analysis are discussed in the context of non-linear changes detected in 29 Si solid state NMR during zeolite amorphisation. Whilst the HDA phase is chemically disordered, the LDA phase exhibits much of the Al-Si ordering present in the starting zeolite. These findings are considered in the context of perfect glasses predicted to occur when super strong liquids are supercooled

Study of Li atom diffusion in amorphous Li3PO4 with neural network potential

Science.gov (United States)

Li, Wenwen; Ando, Yasunobu; Minamitani, Emi; Watanabe, Satoshi

2017-12-01

To clarify atomic diffusion in amorphous materials, which is important in novel information and energy devices, theoretical methods having both reliability and computational speed are eagerly anticipated. In the present study, we applied neural network (NN) potentials, a recently developed machine learning technique, to the study of atom diffusion in amorphous materials, using Li3PO4 as a benchmark material. The NN potential was used together with the nudged elastic band, kinetic Monte Carlo, and molecular dynamics methods to characterize Li vacancy diffusion behavior in the amorphous Li3PO4 model. By comparing these results with corresponding DFT calculations, we found that the average error of the NN potential is 0.048 eV in calculating energy barriers of diffusion paths, and 0.041 eV in diffusion activation energy. Moreover, the diffusion coefficients obtained from molecular dynamics are always consistent with those from ab initio molecular dynamics simulation, while the computation speed of the NN potential is 3-4 orders of magnitude faster than DFT. Lastly, the structure of amorphous Li3PO4 and the ion transport properties in it were studied with the NN potential using a large supercell model containing more than 1000 atoms. The formation of P2O7 units was observed, which is consistent with the experimental characterization. The Li diffusion activation energy was estimated to be 0.55 eV, which agrees well with the experimental measurements.

Amorphous Mn oxide-ordered mesoporous carbon hybrids as a high performance electrode material for supercapacitors.

Science.gov (United States)

Nam, Inho; Kim, Nam Dong; Kim, Gil-Pyo; Park, Junsu; Yi, Jongheop

2012-07-01

A supercapacitor has the advantages of both the conventional capacitors and the rechargeable batteries. Mn oxide is generally recognized one of the potential materials that can be used for a supercapacitor, but its low conductivity is a limiting factor for electrode materials. In this study, a hybrid of amorphous Mn oxide (AMO) and ordered mesoporous carbon (OMC) was prepared and characterized using X-ray diffraction, transmission electron microscopy, N2/77 K sorption techniques, and electrochemical analyses. The findings indicate that the electrochemical activities of Mn oxide were facilitated when it was in the hybrid state because OMC acted as a pathway for both the electrolyte ions and the electrons due to the characteristics of the ordered mesoporous structure. The ordered mesoporous structure of OMC was well maintained even after hybridization with amorphous Mn oxide. The electrochemical-activity tests revealed that the AMO/OMC hybrid had a higher specific capacitance and conductivity than pure Mn oxide. In the case where the Mn/C weight ratio was 0.75, the composite showed a high capacitance of 153 F/g, which was much higher than that for pure Mn oxide, due to the structural effects of OMC.

ANALYSIS OF BARRIERS IN LISTENING COMPREHENSION AMONG JUNIOR HIGH SCHOOL STUDENTS

Directory of Open Access Journals (Sweden)

Setia Muljanto

2012-12-01

Full Text Available This research paper identifies barriers and difficulties in listening comprehension faced by junior high school students. The research questions were what barriers did students encounter and how did they used strategies to overcome those barriers. This study used a qualitative method and was a case study involving 40 students and one English teacher. The data were obtained by ways of conducting a test of listening taken from TOEIC test. The tests indicated that the results scores were not quite satisfactory. This is primarily caused by speech delivery of the native speaker which was too fast. This means that students faced listening barriers especially in processing information. The data also indicated that students were also nervous when doing the test as habitual barrier. Strategies used to overcome these barriers are by making students get used to listen and use English and making them familiar with certain contexts in real life.

Vibrational spectra and boson-like excitations in different amorphous forms of ice

International Nuclear Information System (INIS)

Kolesnikov, A.I.; Li, J.C.; Uffindell, C.H.

1999-01-01

Complete text of publication follows. Glasses are very interesting objects in the physics of condensed matter, with many universal properties, such as low-energy excitations (LEE) coexisting with the sound waves and giving an excess of vibrational modes with respect to the crystalline spectrum (the so called 'boson' peak) in Raman and inelastic neutron scattering (INS). Recently it was discovered that films of hydrogenated amorphous silicon do not show such LEE, whereas films of amorphous silicon do [1]. Also, the resonant absorption by two-level systems was observed for the high-density amorphous (hda) ice but not for the low-density amorphous (lda) ice in the far infrared spectra [2]. Thus, the nature of these near universal LEE becomes rather puzzling. This report presents the results of INS studies for hda and lda ice produced by high-pressure treatment and for vapor-deposited lda ice. Clear LEE were observed in the spectra for hda and deposited lda ice unlike their crystalline analogues. (author)

Electron-irradiation-induced crystallization of amorphous orthophosphates

International Nuclear Information System (INIS)

Meldrum, A.; Ewing, R.C.; Boatner, L.A.

1996-12-01

Amorphous LaPO 4 , EuPO 4 , GdPO 4 , ScPO 4 , and fluorapatite [Ca 5 (PO 4 ) 3 F] were irradiated by electron beam in a TEM. Irradiations were done at -150 to 300 C, 80 to 200 keV, and current densities from 0.3 to 16 A/cm 2 . In all cases, the materials crystallized to form a randomly oriented polycrystalline assemblage. Crystallization is driven dominantly by inelastic processes, although ballistic collisions with target nuclei can be important above 175 keV, particularly in apatite. Using a high current density, crystallization is so fast that continuous lines of crystallites can be ''drawn'' on the amorphous matrix

Paramagnetic defects in hydrogenated amorphous carbon powders

International Nuclear Information System (INIS)

Keeble, D J; Robb, K M; Smith, G M; Mkami, H El; Rodil, S E; Robertson, J

2003-01-01

Hydrogenated amorphous carbon materials typically contain high concentrations of paramagnetic defects, the density of which can be quantified by electron paramagnetic resonance (EPR). In this work EPR measurements near 9.5, 94, and 189 GHz have been performed on polymeric and diamond-like hydrogenated amorphous carbon (a-C:H) powder samples. A similar single resonance line was observed at all frequencies for the two forms of a-C:H studied. No contributions to the spectrum from centres with resolved anisotropic g-values as reported earlier were detected. An increase in linewidth with microwave frequency was observed. Possible contributions to this frequency dependence are discussed

Porosity and mechanical properties of amorphous alloys

International Nuclear Information System (INIS)

Betekhtin, V.I.; Kadomtsev, A.G.; Amosova, O.V.

2003-01-01

The obtained experimental data on the effect of the inherent submicroporosity and its change under impact of high hydrostatic pressure or annealing on the strength, microdestruction, embrittlement temperature, the first crystallization stage and peculiarities of the surface crystallization of the amorphous alloys are analyzed. The conclusion is made on the basis of the studies on the peculiarities of the voluminous and surface crystallization of the Fe 56 Co 24 Si 5 B 15 , Fe 78 Ni 2 Si 8 B 12 , Fe 85 B 15 , Fe 58 Ni 20 Si 9 B 13 amorphous alloys that the increase in the inherent submicroporosity is one of the essential factors facilitating crystallization [ru

Pressure-induced preferential growth of nanocrystals in amorphous Nd9Fe85B6

International Nuclear Information System (INIS)

Wu Wei; Li Wei; Sun Hongyu; Li Hui; Zhang Xiangyi; Li Xiaohong; Liu Baoting

2008-01-01

Control over the growth and crystallographic orientation of nanocrystals in amorphous alloys is of particular importance for the development of advanced nanocrystalline materials. In the present study, Nd 2 Fe 14 B nanocrystals with a strong crystallographic texture along the [410] direction have been produced in Nd-lean amorphous Nd 9 Fe 85 B 6 under a high pressure of 6 GPa at 923 K. This is attributed to the high pressure inducing the preferential growth of Nd 2 Fe 14 B nanocrystals in the alloy. The present study demonstrates the potential application of high-pressure technology in controlling nanocrystalline orientation in amorphous alloys

Elastic characteristics and microplastic deformation of amorphous alloys on iron base

Energy Technology Data Exchange (ETDEWEB)

Pol' dyaeva, G.P.; Zakharov, E.K.; Ovcharov, V.P.; Tret' yakov, B.N. (Tsentral' nyj Nauchno-Issledovatel' skij Inst. Chernoj Metallurgii, Moscow (USSR))

1983-01-01

Investigation results of elasticity and microplasticity properties (modulus of normal elasticity E, elasticity limit sigmasub(0.01) and yield limit sigmasub(0.2)) of three amorphous alloys on iron base Fe/sub 80/B/sub 20/, Fe/sub 70/Cr/sub 10/B/sub 20/ and Fe/sub 70/Cr/sub 5/Ni/sub 5/B/sub 20/ are given. Amorphous band of the alloys is obtained using the method of melt hardening. It is shown that amorphous alloys on iron base possess high elasticity and yield limits and hardness and are very perspective for the use as spring materials.

Amorphous Terfenol-D films using nanosecond pulsed laser deposition

International Nuclear Information System (INIS)

Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

2009-01-01

Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Structural morphology of amorphous conducting carbon film

Indian Academy of Sciences (India)

Unknown

moves from low preparation temperature to high preparation temperature. The amorphous .... nm and the interac- tion between the pi-electron clouds of the two layers re- .... sp2 configuration forms to minimize stress and making. C900 films ...

Corrosion resistance of amorphous NiCrZr and NiCrMoZr alloys

International Nuclear Information System (INIS)

Naka, M.; Miyake, M.; Okamoto, I.

1987-01-01

One of the authors has reported that the corrosion resistance of chromium containing amorphous alloys is extremely improved by alloying phosphorus among metalloids. Two factors operate for the improvement of corrosion resistance of the amorphous alloys. First, phosphorus serves for the rapid formation of protective passive film. Second, the compositional and structural homogeneity in amorphous state also account for the formation of protective film. The latter factor has been clearly seen in the high corrosion resistance of CoCrMoZr and CoCrWZr alloys without metalloids. In order to clarify the separately two factors in the corrosion resistance of amorphous alloys, the corrosion resistance of amorphous alloys without metalloids has to be further investigated. This paper also deals with the corrosion resistance and electrochemical behavior of NiCrZr and NiCrMoZr alloys in 1N HCl, and compare them with the corrosion behavior of the crystalline alloys containing the same composition as that of the amorphous alloys

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Directory of Open Access Journals (Sweden)

Manjari Garg

2016-01-01

Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

Science.gov (United States)

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

The amorphous phase transition in irradiated NiTi alloy

International Nuclear Information System (INIS)

Brimhall, J.L.; Kissinger, H.E.; Pelton, A.R.

1985-01-01

Observed supralinear dose dependence for the amorphous transformation during irradiation of NiTi is compatible with a cascade overlap model for heavy ion (2.5 MeV Ni + , 6 MeV Ta +++ ) irradiations. A model based on total defect build-up, however, is necessary to explain the amorphous transition induced by electron irradiation and can also be applied to heavy ion irradiation. The cascade effects in this latter model are manifested by non-uniform defect distribution in the lattice. The defect build-up model requires a high activation energy for interstitial migration which is not incompatible with recent findings. The form of the temperature dependence can also be rationalized using a defect build-up model (amorphous phase transition, heavy-ion irradiation, electron irradiation, NiTi, defect build-up, cascade overlap). (author)

Physical activity barriers and motivators among high-risk employees.

Science.gov (United States)

Paguntalan, John C; Gregoski, Mathew

2016-11-22

Worksite wellness programs offer an ideal setting to target high-risk sedentary workers to improve health status. Lack of physical activity is associated with increased risk for coronary heart disease and mortality. Despite the risks, the number of sedentary workers is increasing. This study examined the perceived barriers and motivators for physical activity among employees at high-risk for coronary heart disease. A purposive sample of 24 high-risk workers participating in a wellness program in rural South Carolina were enrolled in the study. Qualitative data was obtained through semi-structured face-to-face interviews. Grounded theory was used to analyze qualitative data, and identify overarching themes. Physical limitations due to pain and weakness, lack of motivation, and lack of time emerged as the main barriers to physical activity. Family relationships were reported as the strongest motivator along with social support and potential health benefits. Findings highlight the unique experience of high-risk workers with physical activity. The findingsunderscore the need to design and implement effective interventions specifically designed to meet the needs of high-risk employees.

High-field magnetization curve of random-anisotropy amorphous magnet: Observation of a crossover and link to structural short-range order

Science.gov (United States)

Filippi, J.; Amaral, V. S.; Barbara, B.

1991-08-01

High-field magnetization curves of the series of amorphous alloys DyxGd1-xNi have been measured up to 15 tesla and interpreted in the framework of the theory of Chudnovsky et al. The results show several features (high-field crossovers, correlation volume of local-anisotropy directions, ferromagnetic correlation length) all consistent with each other and in agreement with theoretical predictions.

High-field magnetization curve of random-anisotropy amorphous magnet: Observation of a crossover and link to structural short-range order

International Nuclear Information System (INIS)

Filippi, J.; Amaral, V.S.; Barbara, B.

1991-01-01

High-field magnetization curves of the series of amorphous alloys Dy x Gd 1-x Ni have been measured up to 15 tesla and interpreted in the framework of the theory of Chudnovsky et al. The results show several features (high-field crossovers, correlation volume of local-anisotropy directions, ferromagnetic correlation length) all consistent with each other and in agreement with theoretical predictions

High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

2014-10-15

We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes

Science.gov (United States)

Pyo, Ju-Young; Cho, Won-Ju

2017-09-01

In this paper, we propose an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with off-planed source/drain electrodes. We applied different metals for the source/drain electrodes with Ni and Ti to control the work function as high and low. When we measured the configuration of Ni to drain and source to Ti, the a-IGZO TFT showed increased driving current, decreased leakage current, a high on/off current ratio, low subthreshold swing, and high mobility. In addition, we conducted a reliability test with a gate bias stress test at various temperatures. The results of the reliability test showed the Ni drain and Ti drain had an equivalent effective energy barrier height. Thus, we confirmed that the proposed off-planed structure improved the electrical characteristics of the fabricated devices without any degradation of characteristics. Through the a-IGZO TFT with different source/drain electrode metal engineering, we realized high-performance TFTs for next-generation display devices.

High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

Science.gov (United States)

Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

2015-11-01

High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving Reversible Capacities of High-Surface Lithium Insertion Materials – The Case of Amorphous TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ganapathy, Swapna [Fundamental Aspects of Materials and Energy, Department of Radiation, Radionucleides and Reactors, Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands); Basak, Shibabrata [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Lefering, Anton; Rogers, Edith [Fundamental Aspects of Materials and Energy, Department of Radiation, Radionucleides and Reactors, Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands); Zandbergen, Henny W. [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Wagemaker, Marnix, E-mail: m.wagemaker@tudelft.nl [Fundamental Aspects of Materials and Energy, Department of Radiation, Radionucleides and Reactors, Faculty of Applied Sciences, Delft University of Technology, Delft (Netherlands)

2014-11-28

Chemisorbed water and solvent molecules and their reactivity with components from the electrolyte in high-surface nano-structured electrodes remains a contributing factor toward capacity diminishment on cycling in lithium ion batteries due to the limit in maximum annealing temperature. Here, we report a marked improvement in the capacity retention of amorphous TiO{sub 2} by the choice of preparation solvent, control of annealing temperature, and the presence of surface functional groups. Careful heating of the amorphous TiO{sub 2} sample prepared in acetone under vacuum lead to complete removal of all molecular solvent and an improved capacity retention of 220 mAh/g over 50 cycles at a C/10 rate. Amorphous TiO{sub 2} when prepared in ethanol and heated under vacuum showed an even better capacity retention of 240 mAh/g. From Fourier transform infra-red spectroscopy and electron energy loss spectroscopy measurements, the improved capacity is attributed to the complete removal of ethanol and the presence of very small fractions of residual functional groups coordinated to oxygen-deficient surface titanium sites. These displace the more reactive chemisorbed hydroxyl groups, limiting reaction with components from the electrolyte and possibly enhancing the integrity of the solid electrolyte interface. The present research provides a facile strategy to improve the capacity retention of nano-structured electrode materials.

X-Ray Amorphous Phases in Antarctica Dry Valley Soils: Insight into Aqueous Alteration Processes on Mars?

Science.gov (United States)

Ming, D. W.; Morris, R. V.; Rampe, E. B.; Golden, D. C.; Quinn, J. E.

2015-01-01

The Chemistry and Mineralogy (CheMin) instrument onboard the Mars Curiosity rover has detected abundant amounts (approx. 25-30 weight percentage) of X-ray amorphous materials in a windblown deposit (Rocknest) and in a sedimentary mudstone (Cumberland and John Klein) in Gale crater, Mars. On Earth, X-ray amorphous components are common in soils and sediments, but usually not as abundant as detected in Gale crater. One hypothesis for the abundant X-ray amorphous materials on Mars is limited interaction of liquid water with surface materials, kinetically inhibiting maturation to more crystalline phases. The objective of this study was to characterize the chemistry and mineralogy of soils formed in the Antarctica Dry Valleys, one of the driest locations on Earth. Two soils were characterized from different elevations, including a low elevation, coastal, subxerous soil in Taylor Valley and a high elevation, ultraxerous soil in University Valley. A variety of techniques were used to characterize materials from each soil horizon, including Rietveld analysis of X-ray diffraction data. For Taylor Valley soil, the X-ray amorphous component ranged from about 4 weight percentage in the upper horizon to as high as 15 weight percentage in the lowest horizon just above the permafrost layer. Transmission electron microscopy indicated that the presence of short-range ordered (SRO) smectite was the most likely candidate for the X-ray amorphous materials in the Taylor Valley soils. The SRO smectite is likely an aqueous alteration product of mica inherited from granitic materials during glaciation of Taylor Valley. The drier University Valley soils had lower X-ray amorphous contents of about 5 weight percentage in the lowest horizon. The X-ray amorphous materials in University Valley are attributed to nanoparticles of TiO2 and possibly amorphous SiO2. The high abundance of X-ray amorphous materials in Taylor Valley is surprising for one of the driest places on Earth. These materials

Studies of pulsed laser melting and rapid solidification using amorphous silicon

International Nuclear Information System (INIS)

Lowndes, D.H.; Wood, R.F.

1984-06-01

Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

Amorphization of Laves-Phase Precipitates in Zircaloy-4 by Neutron Irradiation

Energy Technology Data Exchange (ETDEWEB)

Peters, H.R.; Taylor, D.F.; Yang, Walter J.S.

1999-04-23

Examination of corrosion coupons by transmission electron microscopy after their exposure in the Idaho Advanced Test Reactor (ATR) has broadened the Zircaloy-4 precipitate-amorphization database and validated a new kinetic model for previously unavailable values of temperature and fast-neutron flux. The model describes the amorphization of Zr(Fe,Cr){sub 2} intermetallic precipitates in zirconium alloys as a dynamic competition between radiation damage and thermal annealing that leaves some iron atoms available for flux-assisted diffusion to the zirconium matrix. It predicts the width of the amorphous zone as a function of neutron flux (E>1 MeV), temperature, and time. In its simplest form, the model treats the crystalline/amorphous and precipitate/matrix interfaces as parallel planes, and its accuracy decreases for small precipitates and high fluence as the amorphous-zone width approaches precipitate dimensions. The simplest form of the model also considers diffusion to be rate-determining. This is an accurate approximation for steady-state conditions or slow changes in flux and temperature, but inappropriate for the analysis of faster transients. The paper addresses several difficulties inherent in measuring amorphous-zone width, and utilizes the expanded database to evaluate the improvements in predictive accuracy available through both conversion of the model to spherical coordinates and extension of its time dependency.

Mg amorphous alloys for biodegradable implants

International Nuclear Information System (INIS)

Danez, G.P.; Koga, G.Y.; Tonucci, S.; Bolfarini, C.; Kiminami, C.S.; Botta Filho, W.J.

2010-01-01

The use of implants made from amorphous alloys magnesium-based with additions of zinc and calcium are promising. Properties such as biocompatibility, low density, high mechanical strength, low modulus (as compared to alloys such as stainless steel and titanium), corrosion resistance and wear resistance make it attractive for use in implants. Moreover, the by-products of corrosion and wear are not toxic and may contribute to fixation. Aiming to understand the tendency of this amorphous ternary (Mg-Zn-Ca) and expand the information about this system, this work involved the use of the topological criterion of instability (λ) and the criterion of electronegativity (Δe) to the choice of compositions. The alloys were processed into wedge-shaped and analyzed structurally and in X-ray diffraction and scanning electron microscopy. (author)

Amorphous-crystalline transition in thermoelectric NbO2

International Nuclear Information System (INIS)

Music, Denis; Chen, Yen-Ting; Bliem, Pascal; Geyer, Richard W

2015-01-01

Density functional theory was employed to design enhanced amorphous NbO 2 thermoelectrics. The covalent-ionic nature of Nb–O bonding is identical in amorphous NbO 2 and its crystalline counterpart. However, the Anderson localisation occurs in amorphous NbO 2 , which may affect the transport properties. We calculate a multifold increase in the absolute Seebeck coefficient for the amorphous state. These predictions were critically appraised by measuring the Seebeck coefficient of sputtered amorphous and crystalline NbO 2 thin films with the identical short-range order. The first-order phase transition occurs at approximately 550 °C, but amorphous NbO 2 possesses enhanced transport properties at all temperatures. Amorphous NbO 2 , reaching  −173 μV K −1 , exhibits up to a 29% larger absolute Seebeck coefficient value, thereby validating the predictions. (paper)

Elastic properties of amorphous thin films studied by Rayleigh waves

International Nuclear Information System (INIS)

Schwarz, R.B.; Rubin, J.B.

1993-01-01

Physical vapor deposition in ultra-high vacuum was used to co-deposit nickel and zirconium onto quartz single crystals and grow amorphous Ni 1-x Zr x (0.1 < x < 0.87) thin film. A high-resolution surface acoustic wave technique was developed for in situ measurement of film shear moduli. The modulus has narrow maxima at x = 0. 17, 0.22, 0.43, 0.5, 0.63, and 0.72, reflecting short-range ordering and formation of aggregates in amorphous phase. It is proposed that the aggregates correspond to polytetrahedral atom arrangements limited in size by geometrical frustration

Converting sunlight into red light in fluorosilicate glass for amorphous silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Ming, Chengguo, E-mail: mingchengguo1978@163.com [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Song, Feng [Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); Ren, Xiaobin [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Yuan, Fengying; Qin, Yueting [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); An, Liqun; Cai, Yuanxue [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China)

2017-03-15

Fluorosilicate glass was prepared by high-temperature melting method to explore highly efficient luminescence materials for amorphous silicon solar cells. Absorption, excitation and emission spectra of the glass were measured. The optical characters of the glass were discussed in details. The glass can efficiently convert sunlight into red light. Our glass can be applied to amorphous silicon solar cells as a converter of solar spectrum.

Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

International Nuclear Information System (INIS)

Takagi, Akihiro; Nomura, Kenji; Ohta, Hiromichi; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2005-01-01

Carrier transport properties in amorphous oxide semiconductor InGaZnO 4 (a-IGZO) thin films were investigated in detail using temperature dependence of Hall measurements. It was found that Hall mobility increased distinctly as carrier concentration increased. Unlikely conventional amorphous semiconductors such as a-Si/H, definite normal Hall voltage signals were observed on the films with carrier concentrations (N e )>10 16 cm -3 , and Hall mobilities as large as 15 cm 2 (Vs) -1 were attained in the films with N e >10 20 cm -3 . When N e was less than 10 19 cm -3 , the temperature dependence of Hall mobility showed thermally-activated behavior in spite that carrier concentration was independent of temperature. While, it changed to almost degenerate conduction at N e >10 18 cm -3 . These behaviors are similar to those observed in single-crystalline IGZO, and are explained by percolation conduction through distributed potential barriers which are formed in the vicinity of the conduction band bottom due to the randomness of the amorphous structure. The effective mass of a-IGZO was estimated to be ∼0.34 m e (m e is the mass of free electron) from optical data, which is almost the same as that of crystalline IGZO (∼0.32 m e )

Viability for controlling long-term leaching of radionuclides from HLW glass by amorphous silica additives

International Nuclear Information System (INIS)

Inagaki, Y.; Uehara, S.

2004-01-01

Dissolution and deterioration experiments in coexistence system of amorphous silica and vitrified wastes have been executed in order to evaluating the effects of amorphous silica addition to high level radioactive vitrified waste (HLW glass) on suppression of nuclide leaching. Geo-chemical reaction mechanism among the vitrified waste, the amorphous silica and water was also evaluated. Dissolution of the silica network was suppressed by addition of the amorphous silica. However, the leaching of soluble nuclides like B proceeded depending on the hydration deterioration reaction. (A. Hishinuma)

Atomic mobility in the overheated amorphous GeTe compound for phase change memories

International Nuclear Information System (INIS)

Sosso, G.C.; Behler, J.; Bernasconi, M.

2016-01-01

Abstractauthoren Phase change memories rest on the ability of some chalcogenide alloys to undergo a fast and reversible transition between the crystalline and amorphous phases upon Joule heating. The fast crystallization is due to a high nucleation rate and a large crystal growth velocity which are actually possible thanks to the fragility of the supercooled liquid that allows for the persistence of a high atomic mobility at high supercooling where the thermodynamical driving force for crystallization is also high. Since crystallization in the devices occurs by rapidly heating the amorphous phase, hysteretic effects might arise with a different diffusion coefficient and viscosity on heating than on cooling. In this work, we have quantified these hysteretic effects in the phase change compound GeTe by means of molecular dynamics simulations. The atomic mobility in the overheated amorphous phase is lower than in supercooled liquid at the same temperature and the viscosity is consequently higher. Still, the simulations of the overheated amorphous phase reveal a breakdown of the Stokes-Einstein relation between the diffusion coefficient and the viscosity, similarly to what we found previously in the supercooled liquid. Evidences are provided that the breakdown is due to the emergence of dynamical heterogeneities at high supercooling. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Magnetic and thermal properties of amorphous TbFeCo alloy films

Energy Technology Data Exchange (ETDEWEB)

Wang, Ke, E-mail: K.Wang@hqu.edu.cn; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

2017-07-15

Highlights: • Significant increase in magnetization is observed in TbFeCo upon crystallization. • The crystallization temperature is determined in the range between 400 and 450 °C. • The activation barriers for structural changes are obtained successfully. • Better thermal stability against crystallization and oxidation is demonstrated in FeCo-rich sample than Tb-rich type. - Abstract: Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

Air-stable π-conjugated amorphous copolymer field-effect transistors with high mobility of 0.3 cm²/Vs

DEFF Research Database (Denmark)

Georgakopoulos, S.; Gu, Y.; Nielsen, Martin Meedom

2012-01-01

We have fabricated organic bottom-contact top-gate field-effect transistors with an indenofluorene-phenanthrene co-polymer semiconductor, exhibiting ON/OFF ratio of 10(7) and uncommonly high mobility for an amorphous conjugated polymer of up to 0.3 cm(2)/Vs. Lack of crystallinity in this material...

Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

Energy Technology Data Exchange (ETDEWEB)

Kim, Young-Soon, E-mail: kyscjb@i-sunam.com; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

2015-01-15

Highlights: • Economical method for crack-free amorphous yttria layer deposition by dip coating. • Simpler process for planar yttria film as a diffusion barrier and nucleation layer. • Easy control over the film properties with better characteristics. • Easy control over the thickness of the deposited films. • A feasible process that can be easily adopted by HTSCC industries. - Abstract: Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y{sub 2}O{sub 3} dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm{sup 2} area. After Y{sub 2}O{sub 3} deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO{sub 3} (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y{sub 2}O{sub 3} and GdBCO/LMO/MgO/Y{sub 2}O{sub 3} stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y{sub 2}O{sub 3} multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

Radiation-induced formation of cavities in amorphous germanium

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.

1989-01-01

Prethinned polycrystalline Ge TEM samples were irradiated with 1.5 MeV Kr + ions at room temperature while structural and morphological changes were observed in situ in the Argonne High Voltage Electron Microscope-Tandem Facility. After a Kr + dose of 1.2x10 14 ions/cm 2 , the irradiated Ge was completely amorphized. A high density of small void-like cavities was observed after a Kr + dose of 7x10 14 ions/cm 2 . With increasing Kr + ion dose, these cavities grew into large holes transforming the irradiated Ge into a sponge-like porous material after 8.5x10 15 ions/cm 2 . The radiation-induced nucleation of void-like cavities in amorphous material is astonishing, and the final structure of the irradiated Ge with enormous surface area may have potential applications

Magnetic and thermal properties of amorphous TbFeCo alloy films

Science.gov (United States)

Wang, Ke; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

2017-07-01

Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

Ion-induced damage and amorphization in Si

International Nuclear Information System (INIS)

Holland, O.W.; White, C.W.

1990-01-01

Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

Control of amorphous films properties in the case of combined sputtering of targets

International Nuclear Information System (INIS)

Okunev, V.D.; Yurov, A.G.

1979-01-01

A possibility of controlling amorphous film properties produced by combined sputtering of two targets: was investigated one of the targets was made of a basis material-polycrystalline CdGeAs 2 , the other one was made of a material of additives. As the additives the Ni,Co elements with low chemical activity and the Cu,Te additives with high chemical activity were used. Besides, to study the effect of deviation from amorphous CdGeAs 2 stoichiometry on film properties, the Gd,Ge,As additives were investigated. The various additives influence on electric conductivity of amorphous films has been studied. It is shown that approximately 1 at% Ni or Co contents results in reducing film specific resistance by 6 orders. Cu and Te introduction results in the change of the structure and type of amorphous layer conductivity. The conclusion has been drawn, that introduction of the elements with high chemical activity can be used as the method of producing films with new physicochemical properties

Amorphous silica in ultra-high performance concrete: First hour of hydration

Energy Technology Data Exchange (ETDEWEB)

Oertel, Tina, E-mail: tina.oertel@isc.fraunhofer.de [Fraunhofer-Institute for Silicate Research ISC, Neunerplatz 2, 97082 Würzburg (Germany); Chair for Inorganic Chemistry I, Universität Bayreuth, Universitätsstr. 30, 95440 Bayreuth (Germany); Hutter, Frank [Fraunhofer-Institute for Silicate Research ISC, Neunerplatz 2, 97082 Würzburg (Germany); Helbig, Uta, E-mail: uta.helbig@th-nuernberg.de [Chair for Crystallography and X-ray Methods, Technische Hochschule Nürnberg Georg Simon Ohm, Wassertorstraße 10, 90489 Nürnberg (Germany); Sextl, Gerhard [Fraunhofer-Institute for Silicate Research ISC, Neunerplatz 2, 97082 Würzburg (Germany); Chair for Chemical Technology of Advanced Materials, Julius Maximilian Universität, Röntgenring 11, 97070 Würzburg (Germany)

2014-04-01

Amorphous silica in the sub-micrometer size range is widely used to accelerate cement hydration. Investigations including properties of silica which differ from the specific surface area are rare. In this study, the reactivity of varying types of silica was evaluated based on their specific surface area, surface silanol group density, content of silanol groups and solubility in an alkaline suspension. Pyrogenic silica, silica fume and silica synthesized by hydrolysis and condensation of alkoxy silanes, so-called Stoeber particles, were employed. Influences of the silica within the first hour were further examined in pastes with water/cement ratios of 0.23 using in-situ X-ray diffraction, cryo scanning electron microscopy and pore solution analysis. It was shown that Stoeber particles change the composition of the pore solution. Na{sup +}, K{sup +}, Ca{sup 2+} and silicate ions seem to react to oligomers. The extent of this reaction might be highest for Stoeber particles due to their high reactivity.

Superplasticity of amorphous alloy

International Nuclear Information System (INIS)

Levin, Yu.B.; Likhachev, V.L.; Sen'kov, O.N.

1988-01-01

Results of mechanical tests of Co 57 Ni 10 Fe 5 Si 11 B 17 amorphous alloy are presented and the effect of crystallization, occurring during deformation process, on plastic low characteristics is investiagted. Superplasticity of amorphous tape is investigated. It is shown, that this effect occurs only when during deformation the crystallization takes place. Process model, based on the usage disclination concepts about glass nature, is suggested

FY05 HPCRM Annual Report: High-Performance Corrosion-Resistant Iron-Based Amorphous Metal Coatings

Energy Technology Data Exchange (ETDEWEB)

Farmer, J; Choi, J; Haslam, J; Day, S; Yang, N; Headley, T; Lucadamo, G; Yio, J; Chames, J; Gardea, A; Clift, M; Blue, G; Peters, W; Rivard, J; Harper, D; Swank, D; Bayles, R; Lemieux, E; Brown, R; Wolejsza, T; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Lavernia, E; Schoenung, J; Ajdelsztajn, L; Dannenberg, J; Graeve, O; Lewandowski, J; Perepezko, J; Hildal, K; Kaufman, L; Boudreau, J

2007-09-20

New corrosion-resistant, iron-based amorphous metals have been identified from published data or developed through combinatorial synthesis, and tested to determine their relative corrosion resistance. Many of these materials can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in some very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Two Fe-based amorphous metal formulations have been found that appear to have corrosion resistance comparable to, or better than that of Ni-based Alloy C-22, based on breakdown potential and corrosion rate. Both Cr and Mo provide corrosion resistance, B enables glass formation, and Y lowers critical cooling rate (CCR). SAM1651 has yttrium added, and has a nominal critical cooling rate of only 80 Kelvin per second, while SAM2X7 (similar to SAM2X5) has no yttrium, and a relatively high critical cooling rate of 610 Kelvin per second. Both amorphous metal formulations have strengths and weaknesses. SAM1651 (yttrium added) has a low critical cooling rate (CCR), which enables it to be rendered as a completely amorphous thermal spray coating. Unfortunately, it is relatively difficult to atomize, with powders being irregular in shape. This causes the powder to be difficult to pneumatically convey during thermal spray deposition. Gas atomized SAM1651 powder has required cryogenic milling to eliminate irregularities that make flow difficult. SAM2X5 (no yttrium) has a high critical cooling rate, which has caused problems associated with devitrification. SAM2X5 can be gas atomized to produce spherical powders of SAM2X5, which enable more facile thermal spray deposition. The reference material, nickel-based Alloy C-22, is an outstanding corrosion-resistant engineering material. Even so, crevice corrosion has been observed with C-22 in hot sodium chloride environments without buffer

FY05 HPCRM Annual Report: High-Performance Corrosion-Resistant Iron-Based Amorphous Metal Coatings

International Nuclear Information System (INIS)

Farmer, J; Choi, J; Haslam, J; Day, S; Yang, N; Headley, T; Lucadamo, G; Yio, J; Chames, J; Gardea, A; Clift, M; Blue, G; Peters, W; Rivard, J; Harper, D; Swank, D; Bayles, R; Lemieux, E; Brown, R; Wolejsza, T; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Aprigliano, L; Branagan, D; Marshall, M; Meacham, B; Lavernia, E; Schoenung, J; Ajdelsztajn, L; Dannenberg, J; Graeve, O; Lewandowski, J; Perepezko, J; Hildal, K; Kaufman, L; Boudreau, J

2007-01-01

New corrosion-resistant, iron-based amorphous metals have been identified from published data or developed through combinatorial synthesis, and tested to determine their relative corrosion resistance. Many of these materials can be applied as coatings with advanced thermal spray technology. Two compositions have corrosion resistance superior to wrought nickel-based Alloy C-22 (UNS No. N06022) in some very aggressive environments, including concentrated calcium-chloride brines at elevated temperature. Two Fe-based amorphous metal formulations have been found that appear to have corrosion resistance comparable to, or better than that of Ni-based Alloy C-22, based on breakdown potential and corrosion rate. Both Cr and Mo provide corrosion resistance, B enables glass formation, and Y lowers critical cooling rate (CCR). SAM1651 has yttrium added, and has a nominal critical cooling rate of only 80 Kelvin per second, while SAM2X7 (similar to SAM2X5) has no yttrium, and a relatively high critical cooling rate of 610 Kelvin per second. Both amorphous metal formulations have strengths and weaknesses. SAM1651 (yttrium added) has a low critical cooling rate (CCR), which enables it to be rendered as a completely amorphous thermal spray coating. Unfortunately, it is relatively difficult to atomize, with powders being irregular in shape. This causes the powder to be difficult to pneumatically convey during thermal spray deposition. Gas atomized SAM1651 powder has required cryogenic milling to eliminate irregularities that make flow difficult. SAM2X5 (no yttrium) has a high critical cooling rate, which has caused problems associated with devitrification. SAM2X5 can be gas atomized to produce spherical powders of SAM2X5, which enable more facile thermal spray deposition. The reference material, nickel-based Alloy C-22, is an outstanding corrosion-resistant engineering material. Even so, crevice corrosion has been observed with C-22 in hot sodium chloride environments without buffer

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Directory of Open Access Journals (Sweden)

Imas Noviyana

2017-06-01

Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

Crystallization inhibitors for amorphous oxides

International Nuclear Information System (INIS)

Reznitskij, L.A.; Filippova, S.E.

1993-01-01

Data for the last 10 years, in which experimental results of studying the temperature stabilization of x-ray amorphous oxides (including R 3 Fe 5 O 12 R-rare earths, ZrO 2 , In 2 O 3 , Sc 2 O 3 ) and their solid solution are presented, are generalized. Processes of amorphous oxide crystallization with the production of simple oxides, solid solutions and chemical compounds with different polyhedral structure, are investigated. Energy and crystallochemical criteria for selecting the doping inhibitor-components stabilizing the amorphous state are ascertained, temperatures and enthalpies of amorpous oxide crystallization are determined, examination of certain provisions of iso,orphous miscibility theory is conducted

High field magnetisation studies in some rare earth based amorphous ribbons

Science.gov (United States)

Krishnan, R.; Lassri, H.; Driouch, L.

1995-02-01

We have carried out magnetisation studies at fields up to 20 T of melt spun amorphous Fe 72- xY xHo 8B 20 alloys. The approach to saturation for H ≤ 11 T has been analysed on the basis of Chudnovsky's model, and the exchange constant, random anisotropy etc. have been calculated. We have also extracted the local anisotropy from the coercivity.

Non-localized deformation in Cu−Zr multi-layer amorphous films under tension

Energy Technology Data Exchange (ETDEWEB)

Zhong, C. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, H. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 1H9 (Canada); Cao, Q.P.; Wang, X.D. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, D.X. [State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China); Hu, J.W. [Hangzhou Workers Amateur University, Hangzhou 310027 (China); Liaw, P.K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Jiang, J.Z., E-mail: jiangjz@zju.edu.cn [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2016-09-05

In metallic glasses (MGs), plastic deformation at room temperature is dominated by highly localized shear bands. Here we report the non-localized deformation under tension in Cu−Zr multi-layer MGs with a pure amorphous structure using large-scale atomistic simulations. It is demonstrated that amorphous samples with high layer numbers, composed of Cu{sub 64}Zr{sub 36} and Cu{sub 40}Zr{sub 60}, or Cu{sub 64}Zr{sub 36} and Cu{sub 50}Zr{sub 50}, present obviously non-localized deformation behavior. We reveal that the deformation behavior of the multi-layer-structured MG films is related but not determined by the deformation behavior of the composed individual layers. The criterion for the deformation mode change for MGs with a pure amorphous structure, in generally, was suggested, i.e., the competition between the elastic-energy density stored and the energy density needed for forming one mature shear band in MGs. Our results provide a promising strategy for designing tensile ductile MGs with a pure amorphous structure at room temperature. - Highlights: • Tensile deformation behaviors in multi-layer MG films. • Films with high layer numbers confirmed with a non-localized deformation behavior. • The deformation mode is reasonably controlled by whether U{sub p} larger than U{sub SB.}.

Coastal barrier stratigraphy for Holocene high-resolution sea-level reconstruction.

Science.gov (United States)

Costas, Susana; Ferreira, Óscar; Plomaritis, Theocharis A; Leorri, Eduardo

2016-12-08

The uncertainties surrounding present and future sea-level rise have revived the debate around sea-level changes through the deglaciation and mid- to late Holocene, from which arises a need for high-quality reconstructions of regional sea level. Here, we explore the stratigraphy of a sandy barrier to identify the best sea-level indicators and provide a new sea-level reconstruction for the central Portuguese coast over the past 6.5 ka. The selected indicators represent morphological features extracted from coastal barrier stratigraphy, beach berm and dune-beach contact. These features were mapped from high-resolution ground penetrating radar images of the subsurface and transformed into sea-level indicators through comparison with modern analogs and a chronology based on optically stimulated luminescence ages. Our reconstructions document a continuous but slow sea-level rise after 6.5 ka with an accumulated change in elevation of about 2 m. In the context of SW Europe, our results show good agreement with previous studies, including the Tagus isostatic model, with minor discrepancies that demand further improvement of regional models. This work reinforces the potential of barrier indicators to accurately reconstruct high-resolution mid- to late Holocene sea-level changes through simple approaches.

Amorphization of Ge and InP studied using nuclear hyperfine methods

International Nuclear Information System (INIS)

Byrne, A.P.; Bezakova, E.; Glover, C.J.; Ridgway, M.C.

1999-01-01

The ion beam amorphization of InP and Ge has been studied using the Perturbed Angular Correlation (PAC) technique. Semiconductor samples were preimplanted with the radioisotope 111 In using a direct production-recoil implantation method and beams from the ANU Heavy-ion Facility. Following annealing samples were amorphized using Ge beams with doses between 2 x 10 12 ion/cm 2 and 5000 x 10 12 ion/cm 2 . For InP the PAC spectra identified three distinct regimes, crystalline, disordered and amorphous environments, with a smooth transition observed as a function of dose. The dose dependence of the relative fractions of the individual probe environments has been determined. A direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. The PAC method compares favorably with other methods used in its ability to differentiate changes at high dose. The results for InP will be compared with those in Ge. The implantation method will be discussed, as will developments in the establishment of a dedicated facility for the implantation of radioisotopes

Amorphous graphene: a realization of Zachariasen’s glass

International Nuclear Information System (INIS)

Kumar, Avishek; Thorpe, M F; Wilson, Mark

2012-01-01

Amorphous graphene is a realization of a two-dimensional Zachariasen glass as first proposed 80 years ago. Planar continuous random networks of this archetypal two-dimensional network are generated by two complementary simulation methods. In the first, a Monte Carlo bond switching algorithm is employed to systematically amorphize a crystalline graphene sheet. In the second, molecular dynamics simulations are utilized to quench from the high temperature liquid state. The two approaches lead to similar results as detailed here, through the pair distribution function and the associated diffraction pattern. Details of the structure, including ring statistics and angular distortions, are shown to be sensitive to preparation conditions, and await experimental confirmation.

Ab initio simulation of amorphous silicon

International Nuclear Information System (INIS)

Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

1999-01-01

Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

International Nuclear Information System (INIS)

Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

2014-01-01

Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

International Nuclear Information System (INIS)

Pershyn, Y.P.; Zubarev, E.N.; Kondratenko, V.V.; Sevryukova, V.A.; Kurbatova, S.V.

2011-01-01

Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∝27 nm and barrier layers of CrB 2 0.3- and 0.7-nm thick within the temperature range of 420-780 K were studied by methods of small-angle X-ray reflectivity (λ=0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed. (orig.)

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Science.gov (United States)

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

2018-03-07

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

Optical waveguiding in amorphous tellurium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Nayak, Ranu; Gupta, Vinay; Dawar, A.L.; Sreenivas, K

2003-11-24

Optical waveguiding characteristics of amorphous TeO{sub 2-x} films deposited by reactive sputtering under different O{sub 2}:Ar gas mixtures are investigated on fused quartz and Corning glass substrates. Infra-red absorption band in the range 641-658 cm{sup -1} confirmed the formation of a Te-O bond, and a 20:80 O{sub 2}:Ar gas mixture ratio is found to be optimum for achieving highly uniform and transparent films at a high deposition rate. As grown amorphous films exhibited a large band gap (3.76 eV); a high refractive index value (2.042-2.052) with low dispersion over a wide wavelength range of 500-2000 nm. Optical waveguiding with low propagation loss of 0.26 dB/cm at 633 nm is observed on films subjected to a post-deposition annealing treatment at 200 deg. C. Packing density and etch rates have been determined and correlated with the lowering of optical propagation loss in the annealed films.

Three-dimensional structure of Au nanoparticles supported on amorphous silica and carbon substrates

International Nuclear Information System (INIS)

Bruma, A; Li, Z Y

2012-01-01

Scanning Transmission Electron Microscope (STEM) has been employed to study the three-dimensional structure of gold (Au) nanoparticles deposited by means of thermal evaporation in high vacuum on amorphous silica (a-SiO 2 ) and amorphous carbon (a-C) supports. By performing quantitative analysis on the evolution of the high angle annular dark field (HAADF) images, we studied the influence of the nature and the temperature of support on the growth mode of gold nanoparticles.

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2016-11-30

Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

Dynamics and Structural Details of Amorphous Phases of Ice Determined by Incoherent Inelastic Neutron Scattering

International Nuclear Information System (INIS)

Klug, D.D.; Tulk, C.A.; Svensson, E.C.; Loong, C.

1999-01-01

Incoherent-inelastic neutron scattering data are obtained over the energy range of lattice and internal vibrations of water molecules in phases of ice prepared by pressure-induced amorphization (high-density amorphous ice, hda), by thermal annealing of hda (low-density amorphous ice, lda), and by rapidly cooling water, as well as in ice Ih and Ic . Hydrogen bonding interactions in lda differ significantly from those in the glass obtained by rapid quenching, which has hydrogen-bond interactions characteristic of highly supercooled water. Hydrogen-bond interactions in hda are weaker than in the low-density phases. copyright 1999 The American Physical Society

Amorphous Ultrathin SnO2 Films by Atomic Layer Deposition on Graphene Network as Highly Stable Anodes for Lithium-Ion Batteries.

Science.gov (United States)

Xie, Ming; Sun, Xiang; George, Steven M; Zhou, Changgong; Lian, Jie; Zhou, Yun

2015-12-23

Amorphous SnO2 (a-SnO2) thin films were conformally coated onto the surface of reduced graphene oxide (G) using atomic layer deposition (ALD). The electrochemical characteristics of the a-SnO2/G nanocomposites were then determined using cyclic voltammetry and galvanostatic charge/discharge curves. Because the SnO2 ALD films were ultrathin and amorphous, the impact of the large volume expansion of SnO2 upon cycling was greatly reduced. With as few as five formation cycles best reported in the literature, a-SnO2/G nanocomposites reached stable capacities of 800 mAh g(-1) at 100 mA g(-1) and 450 mAh g(-1) at 1000 mA g(-1). The capacity from a-SnO2 is higher than the bulk theoretical values. The extra capacity is attributed to additional interfacial charge storage resulting from the high surface area of the a-SnO2/G nanocomposites. These results demonstrate that metal oxide ALD on high surface area conducting carbon substrates can be used to fabricate high power and high capacity electrode materials for lithium-ion batteries.

Effects of the amorphization on hysteresis loops of the amorphous spin-1/2 Ising system

International Nuclear Information System (INIS)

Essaoudi, I.; Ainane, A.; Saber, M.; Miguel, J.J. de

2009-01-01

We examine the effects of the amorphization on the hysteresis loops of the amorphous spin-1/2 Ising system using the effective field theory within a probability distribution technique that accounts for the self-spin correlation functions. The magnetization, the transverse and longitudinal susceptibilities, and pyromagnetic coefficient are also studied in detail

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

Energy Technology Data Exchange (ETDEWEB)

Kalkan, B. [Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, California 20015 (United States); Edwards, T. G.; Sen, S. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Raoux, S. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2013-08-28

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

Science.gov (United States)

Kalkan, B.; Edwards, T. G.; Raoux, S.; Sen, S.

2013-08-01

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ˜5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous → β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ˜2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

International Nuclear Information System (INIS)

Kalkan, B.; Edwards, T. G.; Sen, S.; Raoux, S.

2013-01-01

The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Heya, Akira, E-mail: heya@eng.u-hyogo.ac.jp [Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671–2280 (Japan); Kanda, Kazuhiro [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Toko, Kaoru; Sadoh, Taizoh [Department of Electronics, Kyushu University, 744 Nishi-ku, Motooka, Fukuoka 819–0395 (Japan); Amano, Sho [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Matsuo, Naoto [Department of Materials Science and Chemistry, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671–2280 (Japan); Miyamoto, Shuji [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan); Miyao, Masanobu [Department of Electronics, Kyushu University, 744 Nishi-ku, Motooka, Fukuoka 819–0395 (Japan); Mochizuki, Takayasu [Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, 3-2-1 Koto, Kamigori, Hyogo 678–1205 (Japan)

2013-05-01

The low-temperature-crystallization effects of soft X-ray irradiation on the structural properties of amorphous Si and amorphous Ge films were investigated. From the differences in crystallization between Si and Ge, it was found that the effects of soft X-ray irradiation on the crystallization strongly depended on the energy band gap and energy level. The crystallization temperatures of the amorphous Si and amorphous Ge films decreased from 953 K to 853 K and 773 K to 663 K, respectively. The decrease in crystallization temperature was also related to atoms transitioning into a quasi-nucleic phase in the films. The ratio of electron excitation and migration effects to thermal effects was controlled using the storage-ring current (photon flux density). Therefore, we believe that low-temperature crystallization can be realized by controlling atomic migration through electron excitation. - Highlights: • This work investigates the crystallization mechanism for soft X-ray irradiation. • The soft X-ray crystallization depended on the energy band gap and energy level. • The decrease in the crystallization temperature for Si and Ge films was 100 K. • This decrement was related to atoms transitioning into a quasi-nucleic phase.

Influence of the pressure of Fe fundamental amorphous metallic fusions to magnet description

International Nuclear Information System (INIS)

Panakhov, T.M; Ahmadov, V.I; Musayev, Z.S

2011-01-01

Full tex: Obtaining, exploration and application of amorphous fusions on the basis of iron group magnet metals including amorphous phase non-magnetic additions as silisium and boric playing the role of stabilizer of the amorphous phase is widely used last years. Scientific and technical interest to these objects is connected with their physical property - high mechanical, electric, uncial agreement of corrosion and magnet characteristics. Amorphous alloy Fe58Ni20Si9B13 was selected as the object of research. To set the built-in hysteresis characteristics of magnetic fusion mesh, then the maximum magnetic induction (saturation induction) was appointed to the BS and the residual induction Br. The average distance between the borders as a result of pressure and magnetic characteristics of nano parosities in comparison of the relative change that is to say they are close to each other, with the magnetic characteristics of amorphous fusions nano parosity characteristics indicate that the corellation is between magnetic characteristics and nano parosity characteristics.

Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

International Nuclear Information System (INIS)

Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

2008-01-01

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

Quantifying atom addition reactions on amorphous solid water: a review of recent laboratory advances

Science.gov (United States)

He, Jiao; Vidali, Gianfranco

2018-06-01

Complex organic molecules found in space are mostly formed on and in the ice mantle covering interstellar dust grains. In clouds where ionizing irradiation is insignificant, chemical reactions on the ice mantle are dominated by thermal processes. Modeling of grain surface chemistry requires detailed information from the laboratory, including sticking coefficients, binding energies, diffusion energy barriers, mechanism of reaction, and chemical desorption rates. In this talk, recent laboratory advances in obtaining these information would be reviewed. Specifically, this talk will focus on the efforts in our group in: 1) Determining the mechanism of atomic hydrogen addition reactions on amorphous solid water (ASW); 2) Measuring the chemical desorption coefficient of H+O3-->O2+OH using the time-resolved scattering technique; and 3) Measuring the diffusion energy barrier of volatile molecules on ASW. Further laboratory studies will be suggested.This research was supported by NSF Astronomy & Astrophysics Research Grant #1615897.

Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

Directory of Open Access Journals (Sweden)

J. B. Kim

2012-03-01

Full Text Available We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs.

Magnetomechanical coupling in thermal amorphous solids

Science.gov (United States)

Hentschel, H. George E.; Ilyin, Valery; Mondal, Chandana; Procaccia, Itamar

2018-05-01

Standard approaches to magnetomechanical interactions in thermal magnetic crystalline solids involve Landau functionals in which the lattice anisotropy and the resulting magnetization easy axes are taken explicitly into account. In glassy systems one needs to develop a theory in which the amorphous structure precludes the existence of an easy axis, and in which the constituent particles are free to respond to their local amorphous surroundings and the resulting forces. We present a theory of all the mixed responses of an amorphous solid to mechanical strains and magnetic fields. Atomistic models are proposed in which we test the predictions of magnetostriction for both bulk and nanofilm amorphous samples in the paramagnetic phase. The application to nanofilms with emergent self-affine free interfaces requires a careful definition of the film "width" and its change due to the magnetostriction effect.

Fast diffusion and nucleation of the amorphous phase in Ni--Zr films

International Nuclear Information System (INIS)

Ehrhart, P.; Averback, R.S.; Hahn, H.; Yadavalli, S.; Flynn, C.P.

1988-01-01

The nucleation of the amorphous phase by solid-state reactions has been investigated on single-crystal Zr films grown by molecular beam epitaxy and covered in situ with either polycrystalline Ni, amorphous (a-) NiZr, or single-crystalline Zr 99 N 01 films. Interfacial reactions were investigated by backscattering analysis or secondary ion mass spectroscopy. The amorphizing reaction occurred only in the specimen with the a-NiZr overlayer, although fast Ni diffusion through the single-crystalline Zr layer was observed in all three specimens. The nucleation behavior of a-NiZr is attributed to the combination of high-Ni and low-Zr mobility in crystalline Zr

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

KAUST Repository

Nayak, Pradipta K.

2012-05-16

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

Pressure-jump induced rapid solidification of melt: a method of preparing amorphous materials

Science.gov (United States)

Liu, Xiuru; Jia, Ru; Zhang, Doudou; Yuan, Chaosheng; Shao, Chunguang; Hong, Shiming

2018-04-01

By using a self-designed pressure-jump apparatus, we investigated the melt solidification behavior in rapid compression process for several kinds of materials, such as elementary sulfur, polymer polyether-ether-ketone (PEEK) and poly-ethylene-terephthalate, alloy La68Al10Cu20Co2 and Nd60Cu20Ni10Al10. Experimental results clearly show that their melts could be solidified to be amorphous states through the rapid compression process. Bulk amorphous PEEK with 24 mm in diameter and 12 mm in height was prepared, which exceeds the size obtained by melt quenching method. The bulk amorphous sulfur thus obtained exhibited extraordinarily high thermal stability, and an abnormal exothermic transition to liquid sulfur was observed at around 396 K for the first time. Furthermore, it is suggested that the glass transition pressure and critical compression rate exist to form the amorphous phase. This approach of rapid compression is very attractive not only because it is a new technique of make bulk amorphous materials, but also because novel properties are expected in the amorphous materials solidified by the pressure-jump within milliseconds or microseconds.

Growth Mechanism and Origin of High s p3 Content in Tetrahedral Amorphous Carbon

Science.gov (United States)

Caro, Miguel A.; Deringer, Volker L.; Koskinen, Jari; Laurila, Tomi; Csányi, Gábor

2018-04-01

We study the deposition of tetrahedral amorphous carbon (ta-C) films from molecular dynamics simulations based on a machine-learned interatomic potential trained from density-functional theory data. For the first time, the high s p3 fractions in excess of 85% observed experimentally are reproduced by means of computational simulation, and the deposition energy dependence of the film's characteristics is also accurately described. High confidence in the potential and direct access to the atomic interactions allow us to infer the microscopic growth mechanism in this material. While the widespread view is that ta-C grows by "subplantation," we show that the so-called "peening" model is actually the dominant mechanism responsible for the high s p3 content. We show that pressure waves lead to bond rearrangement away from the impact site of the incident ion, and high s p3 fractions arise from a delicate balance of transitions between three- and fourfold coordinated carbon atoms. These results open the door for a microscopic understanding of carbon nanostructure formation with an unprecedented level of predictive power.

Determination of boron in amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

1985-10-01

In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

Miscibility of amorphous ZrO2-Al2O3 binary alloy

Science.gov (United States)

Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

2002-04-01

Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

Sputtered carbon as a corrosion barrier for x-ray detector windows

Energy Technology Data Exchange (ETDEWEB)

Rowley, Joseph; Pei, Lei; Davis, Robert C., E-mail: davis@byu.edu; Vanfleet, Richard R. [Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602 (United States); Liddiard, Steven; Harker, Mallorie; Abbott, Jonathan [Moxtek, Inc., 452 W 1260 N, Orem, Utah 84057 (United States)

2016-09-15

Sputtered amorphous carbon thin films were explored as corrosion resistant coatings on aluminum thin films to be incorporated into x-ray detector windows. The requirements for this application include high corrosion resistance, low intrinsic stress, high strains at failure, and high x-ray transmission. Low temperature sputtering was used because of its compatibility with the rest of the window fabrication process. Corrosion resistance was tested by exposure of carbon coated and uncoated Al thin films to humidity. Substrate curvature and bulge testing measurements were used to determine intrinsic stress and ultimate strain at failure. The composition and bonding of the carbon films were further characterized by electron energy loss spectroscopy, Raman spectroscopy, and carbon, hydrogen, and nitrogen elemental analyses. Samples had low compressive stress (down to.08 GPa), a high strain at failure (3%), and a low fraction of sp{sup 3} carbon–carbon bonds (less than 5%). The high breaking strain and excellent x-ray transmission of these sputtered carbon films indicate that they will work well as corrosion barriers in this application.

Amorphous salts formed from rapid dehydration of multicomponent chloride and ferric sulfate brines: Implications for Mars

Science.gov (United States)

Sklute, Elizabeth C.; Rogers, A. Deanne; Gregerson, Jason C.; Jensen, Heidi B.; Reeder, Richard J.; Dyar, M. Darby

2018-03-01

Salts with high hydration states have the potential to maintain high levels of relative humidity (RH) in the near subsurface of Mars, even at moderate temperatures. These conditions could promote deliquescence of lower hydrates of ferric sulfate, chlorides, and other salts. Previous work on deliquesced ferric sulfates has shown that when these materials undergo rapid dehydration, such as that which would occur upon exposure to present day Martian surface conditions, an amorphous phase forms. However, the fate of deliquesced halides or mixed ferric sulfate-bearing brines are presently unknown. Here we present results of rapid dehydration experiments on Ca-, Na-, Mg- and Fe-chloride brines and multicomponent (Fe2(SO4)3 ± Ca, Na, Mg, Fe, Cl, HCO3) brines at ∼21 °C, and characterize the dehydration products using visible/near-infrared (VNIR) reflectance spectroscopy, mid-infrared attenuated total reflectance spectroscopy, and X-ray diffraction (XRD) analysis. We find that rapid dehydration of many multicomponent brines can form amorphous solids or solids with an amorphous component, and that the presence of other elements affects the persistence of the amorphous phase under RH fluctuations. Of the pure chloride brines, only Fe-chloride formed an amorphous solid. XRD patterns of the multicomponent amorphous salts show changes in position, shape, and magnitude of the characteristic diffuse scattering observed in all amorphous materials that could be used to help constrain the composition of the amorphous salt. Amorphous salts deliquesce at lower RH values compared to their crystalline counterparts, opening up the possibility of their role in potential deliquescence-related geologic phenomena such as recurring slope lineae (RSLs) or soil induration. This work suggests that a wide range of aqueous mixed salt solutions can lead to the formation of amorphous salts and are possible for Mars; detailed studies of the formation mechanisms, stability and transformation

Amorphous salts formed from rapid dehydration of multicomponent chloride and ferric sulfate brines: Implications for Mars

Science.gov (United States)

Sklute, Elizabeth C.; Rogers, A. Deanne; Gregerson, Jason C.; Jensen, Heidi B.; Reeder, Richard J.; Dyar, M. Darby

2018-01-01

Salts with high hydration states have the potential to maintain high levels of relative humidity (RH) in the near subsurface of Mars, even at moderate temperatures. These conditions could promote deliquescence of lower hydrates of ferric sulfate, chlorides, and other salts. Previous work on deliquesced ferric sulfates has shown that when these materials undergo rapid dehydration, such as that which would occur upon exposure to present day Martian surface conditions, an amorphous phase forms. However, the fate of deliquesced halides or mixed ferric sulfate-bearing brines are presently unknown. Here we present results of rapid dehydration experiments on Ca–, Na–, Mg– and Fe–chloride brines and multi-component (Fe2 (SO4)3 ± Ca, Na, Mg, Fe, Cl, HCO3) brines at ∼21°C, and characterize the dehydration products using visible/near-infrared (VNIR) reflectance spectroscopy, mid-infrared attenuated total reflectance spectroscopy, and X-ray diffraction (XRD) analysis. We find that rapid dehydration of many multicomponent brines can form amorphous solids or solids with an amorphous component, and that the presence of other elements affects the persistence of the amorphous phase under RH fluctuations. Of the pure chloride brines, only Fe–chloride formed an amorphous solid. XRD patterns of the multicomponent amorphous salts show changes in position, shape, and magnitude of the characteristic diffuse scattering observed in all amorphous materials that could be used to help constrain the composition of the amorphous salt. Amorphous salts deliquesce at lower RH values compared to their crystalline counterparts, opening up the possibility of their role in potential deliquescence-related geologic phenomena such as recurring slope lineae (RSLs) or soil induration. This work suggests that a wide range of aqueous mixed salt solutions can lead to the formation of amorphous salts and are possible for Mars; detailed studies of the formation mechanisms, stability and

Amorphous salts formed from rapid dehydration of multicomponent chloride and ferric sulfate brines: Implications for Mars.

Science.gov (United States)

Sklute, Elizabeth C; Rogers, A Deanne; Gregerson, Jason C; Jensen, Heidi B; Reeder, Richard J; Dyar, M Darby

2018-03-01

Salts with high hydration states have the potential to maintain high levels of relative humidity (RH) in the near subsurface of Mars, even at moderate temperatures. These conditions could promote deliquescence of lower hydrates of ferric sulfate, chlorides, and other salts. Previous work on deliquesced ferric sulfates has shown that when these materials undergo rapid dehydration, such as that which would occur upon exposure to present day Martian surface conditions, an amorphous phase forms. However, the fate of deliquesced halides or mixed ferric sulfate-bearing brines are presently unknown. Here we present results of rapid dehydration experiments on Ca-, Na-, Mg- and Fe-chloride brines and multi-component (Fe 2 (SO 4 ) 3 ± Ca, Na, Mg, Fe, Cl, HCO 3 ) brines at ∼21°C, and characterize the dehydration products using visible/near-infrared (VNIR) reflectance spectroscopy, mid-infrared attenuated total reflectance spectroscopy, and X-ray diffraction (XRD) analysis. We find that rapid dehydration of many multicomponent brines can form amorphous solids or solids with an amorphous component, and that the presence of other elements affects the persistence of the amorphous phase under RH fluctuations. Of the pure chloride brines, only Fe-chloride formed an amorphous solid. XRD patterns of the multicomponent amorphous salts show changes in position, shape, and magnitude of the characteristic diffuse scattering observed in all amorphous materials that could be used to help constrain the composition of the amorphous salt. Amorphous salts deliquesce at lower RH values compared to their crystalline counterparts, opening up the possibility of their role in potential deliquescence-related geologic phenomena such as recurring slope lineae (RSLs) or soil induration. This work suggests that a wide range of aqueous mixed salt solutions can lead to the formation of amorphous salts and are possible for Mars; detailed studies of the formation mechanisms, stability and transformation

Three integrated photovoltaic/sound barrier power plants. Construction and operational experience

International Nuclear Information System (INIS)

Nordmann, T.; Froelich, A.; Clavadetscher, L.

2002-01-01

After an international ideas competition by TNC Switzerland and Germany in 1996, six companies where given the opportunity to construct a prototype of their newly developed integrated PV-sound barrier concepts. The main goal was to develop highly integrated concepts, allowing the reduction of PV sound barrier systems costs, as well as the demonstration of specific concepts for different noise situations. This project is strongly correlated with a German project. Three of the concepts of the competition are demonstrated along a highway near Munich, constructed in 1997. The three Swiss installations had to be constructed at different locations, reflecting three typical situations for sound barriers. The first Swiss installation was the world first Bi-facial PV-sound barrier. It was built on a highway bridge at Wallisellen-Aubrugg in 1997. The operational experience of the installation is positive. But due to the different efficiencies of the two cell sides, its specific yield lies somewhat behind a conventional PV installation. The second Swiss plant was finished in autumn 1998. The 'zig-zag' construction is situated along the railway line at Wallisellen in a densely inhabited area with some local shadowing. Its performance and its specific yield is comparatively low due to a combination of several reasons (geometry of the concept, inverter, high module temperature, local shadows). The third installation was constructed along the motor way A1 at Bruettisellen in 1999. Its vertical panels are equipped with amorphous modules. The report show, that the performance of the system is reasonable, but the mechanical construction has to be improved. A small trial field with cells directly laminated onto the steel panel, also installed at Bruettisellen, could be the key development for this concept. This final report includes the evaluation and comparison of the monitored data in the past 24 months of operation. (author)

High-Risk Smoking Behaviors and Barriers to Smoking Cessation Among Homeless Individuals.

Science.gov (United States)

Chen, Joseph S; Nguyen, Austin Huy; Malesker, Mark A; Morrow, Lee E

2016-05-01

Although tobacco practices and the effects of tobacco use among the general American population are well described, minimal data exist regarding tobacco use and barriers to smoking cessation among homeless individuals. Anonymous, voluntary surveys based on a previously implemented instrument were completed by 100 smoking individuals residing at a homeless shelter. These surveys assessed high-risk smoking behaviors and respondents' perceived barriers to long-term smoking cessation. Ninety percent of study participants reported engaging in at least one of the high-risk tobacco practices. Nicotine replacement therapy was perceived by respondents to be the most desired form of smoking cessation aid. Excessive stress with use of tobacco smoking to alleviate stress and anxiety was the most significant self-perceived barrier to smoking cessation. High-risk tobacco practices are remarkably common among smoking homeless individuals. Despite literature consistently showing that non-nicotine tobacco cessation pharmacotherapies (varenicline, buproprion) have higher smoking cessation rates, nicotine replacement monotherapy was perceived as more valuable by survey respondents. Although lack of financial resources was expected to be the biggest barrier to successful cessation, social stressors and the use of smoking to cope with homelessness were perceived as a greater obstacle in this cohort. Given the paucity of data on the long-term effects of the high-risk tobacco behaviors reported by these homeless smokers, this study highlights the need for further investigations regarding tobacco use and tobacco cessation in this vulnerable population. Copyright © 2016 by Daedalus Enterprises.

Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of amorphous silicon solar cells (Research on amorphous silicon interface); 1991 nendo amorphous silicon taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1992-03-01

The amorphous solar cell interface has been under study for the enhancement of efficiency and reliability in amorphous solar cells, and this is the compilation of the results achieved in fiscal 1991. In the effort to enhance delta-doped amorphous silicon solar cell efficiency, an amorphous Si solar cell is built using a ZnO film as the transparent conductive film. As the result, an a-Si solar cell with a conversion efficiency of 11.5% is obtained. In the research on the suppression of photodegradation in a-Si, from the viewpoint that a reduction in the amount of hydrogen contained excessively in the film will be effective in decelerating photodegradation, a photoexcited hydrogen radical treatment method is newly proposed, and basic studies are conducted on it. As the result, it is found that an a-Si film processed by a 20-second hydrogen treatment at a substrate temperature of 460 degrees C exhibits a lower photodegradation rate than an ordinary a-Si film. In the research on the deposition of amorphous Si film, a VHF frequency is used instead of 13.56MHz for plasma, and an amorphous Si film is deposited efficiently at a lower voltage at which ions cause less damage. (NEDO)

Mesoporous Amorphous Silicon: A Simple Synthesis of a High-Rate and Long-Life Anode Material for Lithium-Ion Batteries.

Science.gov (United States)

Lin, Liangdong; Xu, Xuena; Chu, Chenxiao; Majeed, Muhammad K; Yang, Jian

2016-11-02

Amorphous Si (a-Si) shows potential advantages over crystalline Si (c-Si) in lithium-ion batteries, owing to its high lithiation potential and good tolerance to intrinsic strain/stress. Herein, porous a-Si has been synthesized by a simple process, without the uses of dangerous or expensive reagents, sophisticated equipment, and strong acids that potential cause environment risks. These porous a-Si particles exhibit excellent electrochemical performances, owing to their porous structure, amorphous nature, and surface modification. They deliver a capacity of 1025 mAh g -1 at 3 A g -1 after 700 cycles. Moreover, the reversible capacity after electrochemical activation, is quite stable throughout the cycling, resulting in a capacity retention about around 88 %. The direct comparison between a-Si and c-Si anodes clearly supports the advantages of a-Si in lithium-ion batteries. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphous titanium-oxide supercapacitors

OpenAIRE

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-01-01

The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7?mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large r...

Feasibility study of hydrogenated amorphous alloys as high-damping materials

International Nuclear Information System (INIS)

Mizubayashi, H.; Ishikawa, Y.; Tanimoto, H.

2004-01-01

The hydrogen internal friction peak (HIFP) and the tensile strength, σ f , in amorphous (denoted by 'a') Zr 60-y Cu 30 Al 10 Si y (y=0, 1) and a-Zr 40 Cu 50-x Al 10 Si x (x=0, 1) alloys are investigated as a function of the hydrogen concentration, C H . The drastic increase in the peak temperature, T p , of the HIFP due to the Si addition by 1 at.% is found for the a-Zr 40 Cu 49 Al 10 Si 1 , where the decrease in 1/τ 0 (τ 0 denotes the pre-exponential factor of the relaxation time for the HIFP) from 1.5x10 12 s -1 to 3.0x10 10 s -1 is observed. On the other hand, the increase in T p due to the Si addition by 1 at.% is much smaller for a-Zr 59 Cu 30 Al 10 Si 1 , where 1/τ 0 for the HIFP in a-Zr 60 Cu 30 Al 10 is already as low as that for a- Zr 40 Cu 49 Al 10 Si 1 . For the HIFP with the peak height, Q p -1 , beyond 1x10 -2 , Q p -1 in the as-charged state decreases after heating to about 380 K because of the hydrogen induced structural relaxation (HISR). The HIFP with Q p -1 below 1x10 -2 is rather stable against the HISR. It is suggested that the highly anisotropic local strain around a hydrogen atom is responsible for the very high Q p -1 and the HISR. For the high-strength and high-damping performance, σ f is higher than 1.5 GPa and Q p -1 after the HISR is slightly lower than 1x10 -2 for the present Zr-Cu-Al-(Si) a-alloys

Experimental study of the polyamorphism of water. I. The isobaric transitions from amorphous ices to LDA at 4 MPa

Science.gov (United States)

Handle, Philip H.; Loerting, Thomas

2018-03-01

The existence of more than one solid amorphous state of water is an extraordinary feature. Since polyamorphism might be connected to the liquid-liquid critical point hypothesis, it is particularly important to study the relations amongst the different amorphous ices. Here we study the polyamorphic transformations of several high pressure amorphous ices to low-density amorphous ice (LDA) at 4 MPa by isobaric heating utilising in situ volumetry and ex situ X-ray diffraction. We find that very-high density amorphous ice (VHDA) and unannealed high density amorphous ice (HDA) show significant relaxation before transforming to LDA, whereby VHDA is seen to relax toward HDA. By contrast, expanded HDA shows almost no relaxation prior to the transformation. The transition to LDA itself obeys criteria for a first-order-like transition in all cases. In the case of VHDA, even macroscopic phase separation is observed. These findings suggest that HDA and LDA are two clearly distinct polyamorphs. We further present evidence that HDA reaches the metastable equilibrium at 140 K and 0.1 GPa but only comes close to that at 140 K and 0.2 GPa. The most important is the path independence of the amorphous phase reached at 140 K and 0.1 GPa.

Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

Energy Technology Data Exchange (ETDEWEB)

Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

2006-09-04

We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

International Nuclear Information System (INIS)

Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

2006-01-01

We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

Amorphization of Molecular Liquids of Pharmaceutical Drugs by Acoustic Levitation

Directory of Open Access Journals (Sweden)

C. J. Benmore

2011-08-01

Full Text Available It is demonstrated that acoustic levitation is able to produce amorphous forms from a variety of organic molecular compounds with different glass forming abilities. This can lead to enhanced solubility for pharmaceutical applications. High-energy x-ray experiments show that several viscous gels form from saturated pharmaceutical drug solutions after 10–20 min of levitation at room temperature, most of which can be frozen in solid form. Laser heating of ultrasonically levitated drugs can also result in the vitrification of molecular liquids, which is not attainable using conventional amorphization methods.

Photonic crystals, amorphous materials, and quasicrystals.

Science.gov (United States)

Edagawa, Keiichi

2014-06-01

Photonic crystals consist of artificial periodic structures of dielectrics, which have attracted much attention because of their wide range of potential applications in the field of optics. We may also fabricate artificial amorphous or quasicrystalline structures of dielectrics, i.e. photonic amorphous materials or photonic quasicrystals. So far, both theoretical and experimental studies have been conducted to reveal the characteristic features of their optical properties, as compared with those of conventional photonic crystals. In this article, we review these studies and discuss various aspects of photonic amorphous materials and photonic quasicrystals, including photonic band gap formation, light propagation properties, and characteristic photonic states.

Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaoqiang, E-mail: lxq_suse@sina.com [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China); Hao, Junying, E-mail: jyhao@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Xie, Yuntao [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China)

2016-08-30

Highlights: • Evolution of nanostructure and properties of the polymeric amorphous carbon films were firstly studied. • Si doping enhanced polymerization of the hydrocarbon chains and Al doping resulted in increase in the ordered carbon clusters of polymeric amorphous carbon films. • Soft polymeric amorphous carbon films exhibited an unconventional frictional behaviors with a superior wear resistance. • The mechanical and vacuum tribological properties of the polymeric amorphous carbon films were significantly improved by Si and Al co-doping. - Abstract: Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

ATLAS - analysis of time-of-flight diffraction data from liquid and amorphous samples

International Nuclear Information System (INIS)

Soper, A.K.; Howells, W.S.; Hannon, A.C.

1989-05-01

The purpose of this manual is to describe a package of data analysis routines which have been developed at the Rutherford Appleton Laboratory for the analysis of time-of-flight diffraction data from liquids, gases, and amorphous materials. There is no fundamental barrier to diffraction data being accurately analysed to structure factor or even pair correlation function within a very short time of the completion of the experiment. Section 1 describes the time-of-flight neutron diffraction experiment and looks at diffraction theory. Section 2 indicates the steps in data analysis of time-of-flight diffraction data and Section 3 gives details of how to run the procedures. (author)

Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air

International Nuclear Information System (INIS)

Narayan, Jagdish; Bhaumik, Anagh

2015-01-01

We report on fundamental discovery of conversion of amorphous carbon into diamond by irradiating amorphous carbon films with nanosecond lasers at room-temperature in air at atmospheric pressure. We can create diamond in the form of nanodiamond (size range <100 nm) and microdiamond (>100 nm). Nanosecond laser pulses are used to melt amorphous diamondlike carbon and create a highly undercooled state, from which various forms of diamond can be formed upon cooling. The quenching from the super undercooled state results in nucleation of nanodiamond. It is found that microdiamonds grow out of highly undercooled state of carbon, with nanodiamond acting as seed crystals

Corrosion resistance of Fe-based amorphous alloys

International Nuclear Information System (INIS)

Botta, W.J.; Berger, J.E.; Kiminami, C.S.; Roche, V.; Nogueira, R.P.; Bolfarini, C.

2014-01-01

Highlights: ► We report corrosion properties of Fe-based amorphous alloys in different media. ► The Cr-containing alloys had corrosion resistance close to that of Pt in all media. ► The wide range of electrochemical stability is relevant in many industrial domains. -- Abstract: Fe-based amorphous alloys can be designed to present an attractive combination of properties with high corrosion resistance and high mechanical strength. Such properties are clearly adequate for their technological use as coatings, for example, in steel pipes. In this work, we studied the corrosion properties of amorphous ribbons of the following Fe-based compositions: Fe 66 B 30 Nb 4 , [(Fe 0.6 Co 0.4 ) 0.75 B 0.2 Si 0.05 ] 96 Nb 4 , [(Fe 0.7 Co 0.3 ) 0.75 B 0.2 Si 0.05 ] 96 Nb 4 , Fe 56 Cr 23 Ni 5.7 B 16 , Fe 53 Cr 22 Ni 5.6 B 19 and Fe 50 Cr 22 Ni 5.4 B 23 . The ribbons were obtained by rapid solidification using the melt-spinning process, and were characterized by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and optical (OM) and scanning electron microscopy (SEM). The corrosion properties were evaluated by corrosion potential survey and potentiodynamic polarization. The Cr containing alloys, that is the FeCrNiB type of alloys, showed the best corrosion resistance properties with the formation of a stable passive film that ensured a very large passivation plateau

Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

Science.gov (United States)

Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

2018-02-01

This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

Enhanced photoconductivity by melt quenching method for amorphous organic photorefractive materials

Science.gov (United States)

Tsujimura, S.; Fujihara, T.; Sassa, T.; Kinashi, K.; Sakai, W.; Ishibashi, K.; Tsutsumi, N.

2014-10-01

For many optical semiconductor fields of study, the high photoconductivity of amorphous organic semiconductors has strongly been desired, because they make the manufacture of high-performance devices easy when controlling charge carrier transport and trapping is otherwise difficult. This study focuses on the correlation between photoconductivity and bulk state in amorphous organic photorefractive materials to probe the nature of the performance of photoconductivity and to enhance the response time and diffraction efficiency of photorefractivity. The general cooling processes of the quenching method achieved enhanced photoconductivity and a decreased filling rate for shallow traps. Therefore, sample processing, which was quenching in the present case, for photorefractive composites significantly relates to enhanced photorefractivity.

Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

Directory of Open Access Journals (Sweden)

J. Rogge

2015-07-01

Full Text Available We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs. By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR ratio of -10% is found for Co2FeAl (24 nm / BaO (5 nm / Fe (7 nm MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM, it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized.

Silicon/Wolfram Carbide@Graphene composite: enhancing conductivity and structure stability in amorphous-silicon for high lithium storage performance

International Nuclear Information System (INIS)

Sun, Wei; Hu, Renzong; Liu, Hui; Zhang, Hanying; Liu, Jiangwen; Yang, Lichun; Wang, Haihui; Zhu, Min

2016-01-01

Highlights: • Two-step ball milling was used to produce an amorphous-Si/WC@Graphene(SW@G) composite. • Concrete-like core-shell structure with high stability was designed. • Multiscale WC particle strengthen the inside structure. • Graphene coating outside much enhanced the cycling stability and conductivity. • The SW@G anode exhibited long cycle life and superior volumetric capacity. - Abstract: Improving the electron conductivity and lithiated structure stability for Si anodes can result in high stable capacity in cells. A Silicon/Wolfram Carbide@Graphene (SW@G) composite anode is designed and produced by a simple two-step ball milling the mixture of coarse-grained Si with good conductive wolfram carbide (WC) and graphite. The SW@G composite consists of multiple-scale WC particles, which are uniformly distributed in amorphous Si matrices, and wrapped by graphene nanosheets (GNs) on the outside. Owing to the unique concrete-like core-shell structure, the wrapping of GNs on the Si improves the conductivity and structural stability of the composite. The inner WC particles which tightly connect the Si and graphene act as the cornerstone to resist large volumetric expansion of Si during charge/discharge, and in particular serve as the high-speed channels of electrons as well as provide more interface paths for Li + to accelerate their transfer inside the Si. These contribute to the excellent electrochemical properties of SW@G composite anode, including high volumetric capacity (three times higher than that of graphite), superior rate capability, and long-life stable cycleability. The synthetic method developed in this work paves the way for large-scale manufacturing of high performance Li storage anodes using commercially available materials and technologies.

Linear variable differential transformer sensor using glass-covered amorphous wires as active core

International Nuclear Information System (INIS)

Chiriac, H.; Hristoforou, E.; Neagu, Maria; Pieptanariu, M.

2000-01-01

Results concerning linear variable differential transformer (LVDT) displacement sensor using as movable core glass-covered amorphous wires are presented. The LVDT response is linear for a displacement of the movable core up to about 14 mm, with an accuracy of 1 μm. LVDT using glass-covered amorphous wire as an active core presents a high sensitivity and good mechanical and corrosion resistance

Anodic electrochemical treatment of amorphous alloys

International Nuclear Information System (INIS)

Isaev, N.I.; Yakovlev, V.B.; Osipov, Eh.K.; Isaev, A.V.; Trofimova, E.A.; Vasil'ev, V.Yu.

1983-01-01

The aim of the investigation is to reveal peculiarities of the process of anodic oxidation and properties of anode oxide films, formed on the surface of amorphous alloys. Amorphous alloys on the base of rectifying metals of Zr-Ni, Zr-Cu-Ni, Zr-Al-Ni, Zr-Cu-Sn, Zr-Al, Zr-Mo systems are studied. Electrolytes which do not dissolve or weakly dissolve oxide film, such as boric acid electrolyte (40-45 g/l H 3 BO 3 and 18 cm 3 /l of the 25% aqueous NH 4 OH solution) and 20% H 2 SO 4 solution, are used for oxidation. Results of investigations, carried out on amorphous alloys, contaning noticeable quantities of non-rectifying components - Cu, Ni, Sn, Fe, Mo etc - have shown that non-rectifying components harden a process of anodic oxidation and decrease the current efficiency. Amorphous alloys, containing only rectifying components are oxidated in anodic way, the regularities of film growth being similar to those obtained for crystalline materials

Development of Amorphous Filler Alloys for the Joining of Nuclear Materials

Energy Technology Data Exchange (ETDEWEB)

Lee, Jai Young; Kim, Dong Myong; Kang, Yoon Sun; Jung, Jae Han; Yu, Ji Sang; Kim, Hae Yeol; Lee, Ho [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

1997-08-01

In the case of advanced CANDU fuel being useful in future, the fabrication processes for soundness insurance of a improved nuclear fuel bundle must be developed at the same time because it have three times combustibility as existing fuel. In particular, as the improved nuclear fuel bundle in which a coated layer thickness is thinner than existing that, firmity of a joint part is very important. Therefore, we need to develop a joint technique using new solder which can settle a potential problem in current joining method. As the Zr-Be alloy system is composed with the elements having high neutron permeability, they are suitable for joint of nuclear fuel pack. The various compositions Zr-Be binary metallic glass alloys were applicable to the joining the nuclear fuel bundles. The thickness of joint layer using the Zr{sub 1}-{sub x}Be{sub x} amorphous ribbon as a solder is thinner than that using physical vapor deposited Be. Among the Zr{sub 1}-{sub x}Be{sub x} amorphous binary alloys, Zr{sub 0}.7Be-0.3 binary alloy is the most appropriate for joint of nuclear fuel bundle because its joint layer is smooth and thin due to low degree of Be diffusion. In the case of the Zr{sub (}0.7-y)Ti{sub y}Be{sub 0}.3 and Zr{sub (}0.7-y)Nb{sub y}Be{sub 0}3 ternary amorphous alloys, the crystallization temperature(T{sub x}) and activation energy(E{sub x}) increase as the contents of Nb and Ti increase respectively. In the aspect of thermal stability, the ternary amorphous alloys are superior than Zr-Be binary amorphous alloys and Zr-Ti-Be amorphous alloy is superior than Zr-Nb-Be amorphous alloy. 12 refs., 5 tabs., 25 figs. (author)

Silicon Monoxide at 1 atm and Elevated Pressures: Crystalline or Amorphous?

KAUST Repository

AlKaabi, Khalid

2014-03-05

The absence of a crystalline SiO phase under ordinary conditions is an anomaly in the sequence of group 14 monoxides. We explore theoretically ordered ground-state and amorphous structures for SiO at P = 1 atm, and crystalline phases also at pressures up to 200 GPa. Several competitive ground-state P = 1 atm structures are found, perforce with Si-Si bonds, and possessing Si-O-Si bridges similar to those in silica (SiO2) polymorphs. The most stable of these static structures is enthalpically just a little more stable than a calculated random bond model of amorphous SiO. In that model we find no segregation into regions of amorphous Si and amorphous SiO2. The P = 1 atm structures are all semiconducting. As the pressure is increased, intriguing new crystalline structures evolve, incorporating Si triangular nets or strips and stishovite-like regions. A heat of formation of crystalline SiO is computed; it is found to be the most negative of all the group 14 monoxides. Yet, given the stability of SiO2, the disproportionation 2SiO (s) → Si(s)+SiO2(s) is exothermic, falling right into the series of group 14 monoxides, and ranging from a highly negative ΔH of disproportionation for CO to highly positive for PbO. There is no major change in the heat of disproportionation with pressure, i.e., no range of stability of SiO with respect to SiO2. The high-pressure SiO phases are metallic. © 2014 American Chemical Society.

Highly textured Nd-Fe-B films grown on amorphous substrates

International Nuclear Information System (INIS)

Hannemann, Ullrich; Melcher, Steffen; Faehler, Sebastian

2004-01-01

Thin films with an almost perfect alignment of Nd 2 Fe 14 B grains with the c-axis (easy magnetisation direction) perpendicular to the film plane were achieved on amorphous SiN substrates using pulsed laser deposition. The texture arises due to epitaxial growth on a Ta(1 1 0) buffer deposited prior to the Nd-Fe-B film. Out-of-plane coercivity of 1.3 T and remanence to saturation magnetisation ratio around 0.95 are obtained for Nd-rich films. An analysis of the coercivity mechanism shows that the switching mechanism is nucleation dominated, independent of the Nd content

Highly textured Nd-Fe-B films grown on amorphous substrates

Energy Technology Data Exchange (ETDEWEB)

Hannemann, Ullrich E-mail: u.hannemann@ifw-dresden.de; Melcher, Steffen; Faehler, Sebastian

2004-05-01

Thin films with an almost perfect alignment of Nd{sub 2}Fe{sub 14}B grains with the c-axis (easy magnetisation direction) perpendicular to the film plane were achieved on amorphous SiN substrates using pulsed laser deposition. The texture arises due to epitaxial growth on a Ta(1 1 0) buffer deposited prior to the Nd-Fe-B film. Out-of-plane coercivity of 1.3 T and remanence to saturation magnetisation ratio around 0.95 are obtained for Nd-rich films. An analysis of the coercivity mechanism shows that the switching mechanism is nucleation dominated, independent of the Nd content.

Pressure-induced preferential growth of nanocrystals in amorphous Nd{sub 9}Fe{sub 85}B{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Wu Wei; Li Wei; Sun Hongyu; Li Hui; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Li Xiaohong; Liu Baoting [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

2008-07-16

Control over the growth and crystallographic orientation of nanocrystals in amorphous alloys is of particular importance for the development of advanced nanocrystalline materials. In the present study, Nd{sub 2}Fe{sub 14}B nanocrystals with a strong crystallographic texture along the [410] direction have been produced in Nd-lean amorphous Nd{sub 9}Fe{sub 85}B{sub 6} under a high pressure of 6 GPa at 923 K. This is attributed to the high pressure inducing the preferential growth of Nd{sub 2}Fe{sub 14}B nanocrystals in the alloy. The present study demonstrates the potential application of high-pressure technology in controlling nanocrystalline orientation in amorphous alloys.

Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration

Directory of Open Access Journals (Sweden)

Yuta Fujimoto

2015-09-01

Full Text Available We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor (PF at 300 K had a maximum value of 82 × 10−6 W/mK2, where the carrier density was 7.7 × 1019 cm−3. Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal. The thermoelectric properties were controlled by the relationship between the position of Fermi level and the height of potential energy barriers.

High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

Energy Technology Data Exchange (ETDEWEB)

Guha, S.; Yang, J.

2005-10-01

The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

Melting and Pressure-Induced Amorphization of Quartz

OpenAIRE

Badro, James; Gillet, Philippe; Barrat, Jean-Louis

1997-01-01

It has recently been shown that amorphization and melting of ice were intimately linked. In this letter, we infer from molecular dynamics simulations on the SiO2 system that the extension of the quartz melting line in the metastable pressure-temperature domain is the pressure-induced amorphization line. It seems therefore likely that melting is the physical phenomenon responsible for pressure induced amorphization. Moreover, we show that the structure of a "pressure glass" is similar to that ...

Corrosion-resistant amorphous alloy ribbons for electromagnetic filtration of iron rusts from water

International Nuclear Information System (INIS)

Kawashima, Asahi; Asami, Katsuhiko; Sato, Takeaki; Hashimoto, Koji

1985-01-01

An attempt was made to use corrosion-resistant amorphous Fe-9Cr-13P-7C alloy ribbons as an electromagnetic filter material for trapping various iron rusts suspended in water at 40 0 C. The ferrimagnetic Fe 3 O 4 rust was trapped with the 100 % efficiency and paramagnetic rusts such as α-Fe 2 O 3 , α-FeOOH and amorphous ferric oxyhydroxide were trapped with certain efficiencies at the magnetic field strength of 0.5-10 kOe. The regeneration of the filter by back-washing was easy. The trapping capacity of electromagnetic filter was proportional to the edge length of the filter material where the high magnetic field strength existed. Therefore, melt-spun thin and narrow amorphous alloy ribbons having the high corrosion resistance have the potential utility as electromagnetic filter material. (author)

Effects of annealing on the microstructure and magnetic property of the mechanically alloyed FeSiBAlNiM (M=Co, Cu, Ag) amorphous high entropy alloys

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaoxia; Zhou, Xuan; Yu, Shuaishuai; Wei, Congcong; Xu, Jing; Wang, Yan, E-mail: mse_wangy@ujn.edu.cn

2017-05-15

The effects of annealing treatment on the microstructure, thermal stability, and magnetic properties of the mechanical alloyed FeSiBAlNiM (M=Co, Cu, Ag) amorphous high entropy alloys (HEAs) have been investigated in this project. The simple crystallization products in FeSiBAlNi amorphous HEAs with Co and Ag addition reveal the high phase stability during heating process. At high annealing treatment, the crystallized HEAs possess the good semi-hard magnetic property. It can conclude that crystallization products containing proper FeSi-rich and FeB-rich phases are beneficial to improve the magnetic property. Annealing near the exothermic peak temperature presents the best enhancing effect on the semi-hard magnetic property of FeSiBAlNiCo. It performs both large saturated magnetization and remanence ratio of 13.0 emu/g and near 45%, which exhibit 465% and 105% enhancement compared with as-milled state, respectively. - Highlights: • Co, Cu, Ag additions affect crystallization behavior of FeSiBAlNi amorphous HEAs. • Crystallization products in FeSiBAlNi Co/Ag reveal high phase stability. • Proper FeSi-rich and FeB-rich phases are beneficial to improve magnetic property. • Annealing treatment improves semi-hard magnetic property compared to as-milled state. • Annealing near exothermic peak temperature shows best enhancing effect on magnetism.

Resilient Amorphous Networks Prepared by Photo-Crosslinking High-Molecular-Weight D,L-Lactide and Trimethylene Carbonate Macromers: Mechanical Properties and Shape-Memory Behavior

NARCIS (Netherlands)

Sharifi, Shahriar; Grijpma, Dirk W.

2012-01-01

Tough networks are prepared by photo-crosslinking high-molecular-weight DLLA and TMC macromers. These amorphous networks exhibit tunable thermal and mechanical properties and have excellent shape-memory features. Variation of the monomer ratio allows adjustment of Tg between approximately −13 and

Anomalous magnetoresistance in amorphous metals

International Nuclear Information System (INIS)

Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

1984-01-01

The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy

International Nuclear Information System (INIS)

Grandjean, A.

1996-01-01

The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom 3 . Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author)

Oxidation influence on crystallisation in iron-based amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Gloriant, T.; Surinach, S.; Munoz, J.S.; Baro, M.D. [Universitat Autonoma de Barcelona (Spain). Dept. de Fisica; Inoue, A. [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

2001-07-01

The partially crystalline iron-based nanophase composites elaborated by rapid solidification techniques are very attractive for their excellent soft magnetic properties and their potential for industrial applications. In these nanocomposite materials a control of both the structure (size, shape and distribution of the nanoparticles in the amorphous matrix) and the kinetic behaviour (nucleation and growth mechanism) is essential in order to obtain the best properties and to be able to produce them at the industrial scale. Our group has been working in this research area for a long time and the investigation presented here is the result of an international collaboration. This study deals with the effect of cobalt addition in Fe-Nb-B melt-spun amorphous alloys on the devitrification/crystallisation processes induced by thermal treatments and characterised by X-ray diffraction analysis (XRD), thermomagnetic analysis (TMG) and transmission electron microscopy observations (TEM). The transformation sequences, from the initial amorphous phase to the fully crystallised final state, were carried out using different annealing experiments (under vacuum and in air) and have revealed a strong influence of the environmental atmosphere during devitrification. It is shown that oxidation can greatly affect the crystallisation behaviour as a result of the high metastable state of the initial amorphous phase. The results and observations of this phenomenon will be presented. (orig.)

Elemental process of amorphization induced by electron irradiation in Si

International Nuclear Information System (INIS)

Yamasaki, Jun; Takeda, Seiji; Tsuda, Kenji

2002-01-01

We recently found that amorphization is induced in Si by electron irradiation. Examining the amorphization systematically, we have established the diagram of steady states under electron irradiation, either amorphous Si (a-Si) or crystalline Si (c-Si) as a function of incident electron energy, electron dose, and irradiation temperature. Utilizing transmission electron microscopy, electron energy filtered diffraction and electron energy-loss spectroscopy, we have characterized the atomic structure, the electronic structure, and the thermal stability of a-Si induced by electron irradiation. Based on the experimental data, we have also concluded that the amorphization is caused by the accumulation of not point defects but small cascade damages. Analyzing the change in the intensity of halo diffraction rings during amorphization, we have clarified that the smallest cascade damage that contributes to amorphization includes only about four Si atoms. This presumably supports the amorphization mechanism that four self-interstitial atoms form the quasistable structure I4 in c-Si and it becomes an amorphous embryo

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

DEFF Research Database (Denmark)

Singh, Shailendra Vikram; Zaharia, T.; Creatore, M.

2010-01-01

Hydrogenated amorphous carbon (a-C:H) deposited from an Ar-C 2H2 expanding thermal plasma chemical vapor deposition (ETP-CVD) is reported. The downstream plasma region of an ETP is characterized by a low electron temperature (∼0.3 eV), which leads to an ion driven chemistry and negligible physical...

Project Guarantee 1985. Final repository for high-level radioactive wastes: The system of safety barriers

International Nuclear Information System (INIS)

Anon.

1985-01-01

Final disposal of radioactive waste involves preventing the waste from returning from the repository location into the biosphere by means of successively arranged containment measures known as safety barriers. In the present volume NGB 85-04 of the series of reports for Project 'Guarantee' 1985, the safety barrier system for the type C repository for high-level waste is described. The barrier parameters which are relevant for safety analysis are quantified and associated error limits and data scatter are given. The aim of the report is to give a summary documentation of the safety analysis input data and their scientific background. For secure containment of radioactive waste safety barriers are used which effectively limit the release of radioactive material from the repository (release barriers) and effectively retard the entry of the original radioactive material into the biosphere (time barriers). Safety barriers take the form of both technically constructed containment measures and the siting of the repository in suitable geological formations. The technical safety barrier system in the case of high-level waste comprises: the waste solidification matrix (borosilicate glass), massive steel canisters, encasement of the waste canisters, encasement of the waste canisters in highly compacted bentonite, sealing of vacant storage space and access routes on repository closure. The natural geological safety barriers - the host rock and overlying formations provide sufficiently long deep groundwater flow times from the repository location to the earth's surface and for additional lengthening of radionuclide migration times by means of various chemical and physical retardation mechanisms. The stability of the geological formations is so great that hydrogeological system is protected for a sufficient length of time from deterioration caused, in particular, by erosion. Observations in the final section of the report indicate that input data for the type C repository safety

Photoexcitation-induced processes in amorphous semiconductors

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [School of Engineering and Logistics, Charles Darwin University, Darwin, NT 0909 (Australia)]. E-mail: jai.singh@cdu.edu.au

2005-07-30

Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.

Photoconductivity of amorphous silicon-rigorous modelling

International Nuclear Information System (INIS)

Brada, P.; Schauer, F.

1991-01-01

It is our great pleasure to express our gratitude to Prof. Grigorovici, the pioneer of the exciting field of amorphous state by our modest contribution to this area. In this paper are presented the outline of the rigorous modelling program of the steady-state photoconductivity in amorphous silicon and related materials. (Author)

Photoexcitation-induced processes in amorphous semiconductors

International Nuclear Information System (INIS)

Singh, Jai

2005-01-01

Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories

High density high performance plasma with internal diffusion barrier in Large Helical Device

International Nuclear Information System (INIS)

Sakamoto, R.; Kobayashi, M.; Miyazawa, J.

2008-10-01

A attractive high density plasma operational regime, namely an internal diffusion barrier (IDB), has been discovered in the intrinsic helical divertor configuration on the Large Helical Device (LHD). The IDB which enables core plasma to access a high density/high pressure regime has been developed. It is revealed that the IDB is reproducibly formed by pellet fueling in the magnetic configurations shifted outward in major radius. Attainable central plasma density exceeds 1x10 21 m -3 . Central pressure reaches 1.5 times atmospheric pressure and the central β value becomes fairly high even at high magnetic field, i.e. β(0)=5.5% at B t =2.57 T. (author)

Production of amorphous nanoparticles by supersonic spray-drying with a microfluidic nebulator

Science.gov (United States)

Amstad, Esther; Gopinadhan, Manesh; Holtze, Christian; Osuji, Chinedum O.; Brenner, Michael P.; Spaepen, Frans; Weitz, David A.

2015-08-01

Amorphous nanoparticles (a-NPs) have physicochemical properties distinctly different from those of the corresponding bulk crystals; for example, their solubility is much higher. However, many materials have a high propensity to crystallize and are difficult to formulate in an amorphous structure without stabilizers. We fabricated a microfluidic nebulator that can produce amorphous NPs from a wide range of materials, even including pure table salt (NaCl). By using supersonic air flow, the nebulator produces drops that are so small that they dry before crystal nuclei can form. The small size of the resulting spray-dried a-NPs limits the probability of crystal nucleation in any given particle during storage. The kinetic stability of the a-NPs—on the order of months—is advantageous for hydrophobic drug molecules.

Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of {alpha} phase brass

Energy Technology Data Exchange (ETDEWEB)

Bond, John W., E-mail: jwb13@le.ac.u [Forensic Research Centre, University of Leicester, Leicester LE1 7 EA (United Kingdom)

2011-04-01

By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of {alpha} phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.

The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

International Nuclear Information System (INIS)

Nguyen, Duc; Girolami, Gregory S.; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Lyding, Joseph; Gruebele, Martin

2014-01-01

Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB 2 glass surface, two-state hopping of 1–2 nm diameter cooperatively rearranging regions or “clusters” occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (<0.5 nm) imaging, scanning tunneling spectroscopy and voltage modulation, ruling out individual atoms, diffusing adsorbates, or pinned charges as the origin of the observed two-state hopping. Smaller clusters are more likely to hop, larger ones are more likely to be immobile. HfB 2 has a very high bulk glass transition temperature T g , and we observe no three-state hopping or sequential two-state hopping previously seen on lower T g glass surfaces. The electronic density of states of clusters does not change when they hop up or down, allowing us to calibrate an accurate relative z-axis scale. By directly measuring and histogramming single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how “mixed” features can show up in surface dynamics of glasses

Analysis of an ideal amorphous solid

International Nuclear Information System (INIS)

To, L.T.; Stachurski, Z.H.

2004-01-01

Full text: In geometrical terms, amorphous solids are fundamentally different from crystalline solids in that they can not be constructed by the crystallographic method of translation of the basis along a lattice. Therefore, to study amorphous structures we must invoke concepts and use measures different to those used for ordered structures. Nevertheless, an ideal amorphous solid must share together with the ideal crystalline solid in the same definition of the term 'ideal'. In both cases it must be a perfect body, in which perfection is carried through in every detail to an unlimited (infinite) size without fault or defect. The latest results on this research will be presented. To qualify for a solid, rigid body, close packing of the spheres is required. For an ideal amorphous solids composed of hard spheres of identical size, we impose a stricter condition for the packing, namely, to be such that all spheres are in fixed positions (no loose spheres). To define the ideal solid, we must define what we mean by a perfect amorphous structure. Here, perfection is defined by, first the definition of imperfections, and next by the requirement of absence of imperfections of any kind. We envisage two types of defects: (i) geometrical, and (ii) statistical. Geometrical defects are: a sphere of different size, a loose sphere, and a vacancy. A statistical defect is defined with respect to two statistical functions: Ψ(N C ), and Φ(S β ). The former describes the probability of a given sphere having nc number of touching contacts, and the latter describes the disposition of the contacts on the surface of the sphere. Defects relating to the two functions will be described. The results for the functions, Ψ(N C ), and Φ(S β ), for the corresponding radial distribution function, and so called blocking number will be presented from simulations of an ideal amorphous solid

Structure and Barrier Properties of Multinanolayered Biodegradable PLA/PBSA Films: Confinement Effect via Forced Assembly Coextrusion.

Science.gov (United States)

Messin, Tiphaine; Follain, Nadège; Guinault, Alain; Sollogoub, Cyrille; Gaucher, Valérie; Delpouve, Nicolas; Marais, Stéphane

2017-08-30

Multilayer coextrusion processing was applied to produce 2049-layer film of poly(butylene succinate-co-butylene adipate) (PBSA) confined against poly(lactic acid) (PLA) using forced assembly, where the PBSA layer thickness was about 60 nm. This unique technology allowed to process semicrystalline PBSA as confined polymer and amorphous PLA as confining polymer in a continuous manner. The continuity of PBSA layers within the 80/20 wt % PLA/PBSA layered films was clearly evidenced by atomic force microscopy (AFM). Similar thermal events to the reference films were revealed by thermal studies; indicating no diffusion of polymers during the melt-processing. Mechanical properties were measured for the multilayer film and the obtained results were those expected considering the fraction of each polymer, revealing the absence of delamination in the PLA/PBSA multinanolayer film. The confinement effect induced by PLA led to a slight orientation of the crystals, an increase of the rigid amorphous fraction (RAF) in PBSA with a densification of this fraction without changing film crystallinity. These structural changes allowed to strongly improve the water vapor and gas barrier properties of the PBSA layer into the multilayer film up to two decades in the case of CO 2 gas. By confining the PBSA structure in very thin and continuous layers, it was then possible to improve the barrier performances of a biodegradable system and the resulting barrier properties were successfully correlated to the effect of confinement on the microstructure and the chain segment mobility of the amorphous phase. Such investigation on these multinanolayers of PLA/PBSA with the aim of evidencing relationships between microstructure implying RAF and barrier performances has never been performed yet. Besides, gas and water permeation results have shown that the barrier improvement obtained from the multilayer was mainly due to the reduction of solubility linked to the reduction of the free volume while

Atomistic study of two-level systems in amorphous silica

Science.gov (United States)

Damart, T.; Rodney, D.

2018-01-01

Internal friction is analyzed in an atomic-scale model of amorphous silica. The potential energy landscape of more than 100 glasses is explored to identify a sample of about 700 two-level systems (TLSs). We discuss the properties of TLSs, particularly their energy asymmetry and barrier as well as their deformation potential, computed as longitudinal and transverse averages of the full deformation potential tensors. The discrete sampling is used to predict dissipation in the classical regime. Comparison with experimental data shows a better agreement with poorly relaxed thin films than well relaxed vitreous silica, as expected from the large quench rates used to produce numerical glasses. The TLSs are categorized in three types that are shown to affect dissipation in different temperature ranges. The sampling is also used to discuss critically the usual approximations employed in the literature to represent the statistical properties of TLSs.

Production of amorphous alloys by ion implantation

International Nuclear Information System (INIS)

Grant, W.A.; Chadderton, L.T.; Johnson, E.

1978-01-01

Recent data are reported on the use of ion implantation to produce amorphous metallic alloys. In particular data on the dose dependence of the crystalline to amorphous transition induced by P + implantation of nickel is presented. (Auth.)

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

Science.gov (United States)

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

High-resolution reconstruction of a coastal barrier system

DEFF Research Database (Denmark)

Fruergaard, Mikkel; Andersen, Thorbjørn Joest; Nielsen, Lars Henrik

2015-01-01

This study presents a detailed reconstruction of the sedimentary effects of Holocene sea-level rise on a modern coastal barrier system (CBS). Increasing concern over the evolution of CBSs due to future accelerated rates of sea-level rise calls for a better understanding of coastal barriers response...... from retreat of the barrier island and probably also due to formation of a tidal inlet close to the study area. Continued transgression and shoreface retreat created a distinct hiatus and wave ravinement surface in the seaward part of the CBS before the barrier shoreline stabilised between 5.0 and 4...

Enhanced proton conductivity of niobium phosphates by interfacing crystal grains with an amorphous functional phase

DEFF Research Database (Denmark)

Huang, Yunjie; Yu, Lele; Li, Haiyan

2016-01-01

Niobium phosphate is an interesting proton conductor operational in the intermediate temperature range. In the present work two forms of phosphates were prepared: an amorphous one with high specific area and a crystalline one with low specific surface area. Both phosphates exhibited very low prot...... the high surface area amorphous phosphate was used as the precursor. At 250 °C thus obtained niobium phosphate showed a high and stable conductivity of 0.03 S cm−1 under dry atmosphere and of 0.06 S cm−1 at a water partial pressure of 0.12 atm....... conductivities. An activation process was developed to convert the phosphates into crystal grains with a phosphorus rich amorphous phase along the grain boundaries. As a result, the obtained niobium phosphates showed considerably enhanced and stable proton conductivities. The activation effect was prominent when...

Amorphization reaction in thin films of elemental Cu and Y

Science.gov (United States)

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

1989-10-01

Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

Heavy ions amorphous semiconductors irradiation study

International Nuclear Information System (INIS)

Benmalek, M.

1978-01-01

The behavior of amorphous semiconductors (germanium and germanium and arsenic tellurides) under ion bombardment at energies up to 2 MeV was studied. The irradiation induced modifications were followed using electrical parameter changes (resistivity and activation energy) and by means of the transmission electron microscopy observations. The electrical conductivity enhancement of the irradiated samples was interpreted using the late conduction theories in amorphous compounds. In amorphous germanium, Electron Microscopy showed the formations of 'globules', these defects are similar to voids observed in irradiated metals. The displacement cascade theory was used for the interpretation of the irradiation induced defects formation and a coalescence mechanism of growth was pointed out for the vacancy agglomeration [fr

One Component Encapsulating Material Matrix as High Barrier Coating, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — To address the NASA need for new flexible food packaging materials with effective high barrier against oxygen and moisture to protect food, minimize weight and...

Generalized melting criterion for beam-induced amorphization

International Nuclear Information System (INIS)

Lam, N. Q.; Okamoto, Paul R.

1993-09-01

Recent studies have shown that the mean-square static atomic displacements provide a generic measure of the enthalpy stored in the lattice in the form of chemical and topological disorder, and that the effect of the displacements on the softening of shear elastic constants is identical to that of heating. This finding lends support to a generalized form of the Lindemann phenomenological melting criterion and leads to a natural interpretion of crystalline-to-amorphous transformations as defect-induced melting of metastable crystals driven beyond a critical state of disorder where the melting temperature falls below the glass-transition temperature. Application of the generalized Lindemann criterion to both the crystalline and amorphous phases indicates that the enthalpies of the two phases become identical when their shear moduli become equal. This thermo-elastic rule provides a basis for predicting the relative susceptibility of compounds to amorphization in terms of their elastic properties as measured by Debye temperatures. The present approach can explain many of the basic findings on beam-induced amorphization of intermetallic compounds as well as amorphous phase formation associated with ion implantation, ion-beam mixing and other solid-state processes

Terahertz-induced Kerr effect in amorphous chalcogenide glasses

DEFF Research Database (Denmark)

Zalkovskij, Maksim; Strikwerda, Andrew; Iwaszczuk, Krzysztof

2013-01-01

We have investigated the terahertz-induced third-order (Kerr) nonlinear optical properties of the amorphous chalcogenide glasses As2S3 and As2Se3. Chalcogenide glasses are known for their high optical Kerr nonlinearities which can be several hundred times greater than those of fused silica. We use...

Synthesis of amorphous acid iron phosphate nanoparticles

International Nuclear Information System (INIS)

Palacios, E.; Leret, P.; Fernández, J. F.; Aza, A. H. De; Rodríguez, M. A.

2012-01-01

A simple method to precipitate nanoparticles of iron phosphate with acid character has been developed in which the control of pH allows to obtain amorphous nanoparticles. The acid aging of the precipitated amorphous nanoparticles favored the P–O bond strength that contributes to the surface reordering, the surface roughness and the increase of the phosphate acid character. The thermal behavior of the acid iron phosphate nanoparticles has been also studied and the phosphate polymerization at 400 °C produces strong compacts of amorphous nanoparticles with interconnected porosity.

Production of amorphous starch powders by solution spray drying

NARCIS (Netherlands)

Niazi, Muhammad B. K.; Broekhuis, Antonius A.

2012-01-01

The spray drying of starch/maltodextrin formulations was evaluated as a potential technology for the manufacturing of amorphous thermoplastic starches. Mixtures of starches with high to low amylose (Am)amylopectin (Ap) ratios were spray-dried from water-based solutions and granular dispersions. The

Analysis of administrative barriers in the industry of the high-rise construction in Russian Federation

Science.gov (United States)

Zaychenko, Irina; Borremans, Alexandra; Gutman, Svetlana

2018-03-01

The article describes the concept and types of administrative barriers encountered in various areas of the enterprise. The particularities of the Russian high-rise construction industry are described and a comparative analysis of administrative barriers in this sector is performed. The main stages and administrative procedures when the developers implement investment and construction projects in the field of high-rise construction are determined. The regulatory and legal framework for the implementation of investment and project activities in the high-rise construction industry has been studied and conclusions have been drawn on its low level of precision in the issue of the formation of competitive and efficient high-rise construction markets. The average number of administrative procedures for the implementation of the investment and construction project in the field of high-rise construction is determined. The factors preventing the reduction of administrative barriers in the high-rise construction industry are revealed.

Amorphous superconductors

International Nuclear Information System (INIS)

Missell, F.P.

1985-01-01

We describe briefly the strong coupling superconductivity observed in amorphous alloys based upon simple metals. For transition metal alloys we discuss the behavior of the superconducting transition temperature T c , the upper critical field H (sub)c2 and the critical current J c . A survey of current problems is presented. (author) [pt

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2015-01-01

Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

International Nuclear Information System (INIS)

Lin, Y. H.; Chou, J. C.

2015-01-01

We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

Facile fabrication of CNTs@C@MoSe2@Se hybrids with amorphous structure for high performance anode in lithium-ion batteries.

Science.gov (United States)

Jin, Rencheng; Cui, Yuming; Wang, Qingyao; Li, Guihua

2017-12-15

Amorphous MoSe 2 and Se anchored on amorphous carbon coated multiwalled carbon nanotubes (CNTs@C@MoSe 2 @Se) have been synthesized by a facile solvothermal strategy. The one dimensional CNTs@C@MoSe 2 @Se can effectively buffer the volume variation, prohibit the aggregation and facilitate electron and ion transport throughout the electrode. Furthermore, the combination of MoSe 2 and Se also provides buffer spaces for the volumetric change during cycling. Thus, the obtained CNTs@C@MoSe 2 @Se hybrids display the enhanced cycle stability and excellent high rate capacity. The reversible capacity of 1010mAhg -1 can be achieved after 100 cycles at the current density of 0.1Ag -1 . Even after 500 cycles, a reversible capacity of 508mAhg -1 is still retained at 5Ag -1 . Copyright © 2017 Elsevier Inc. All rights reserved.

Fabrication and characterization of nano/amorphous dual-phase FINEMET microwires

Energy Technology Data Exchange (ETDEWEB)

Wang, H. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Advanced Composites Centre for Innovation and Science (ACCIS), Department of Aerospace Engineering, University of Bristol, Bristol BS8 1TR (United Kingdom); Qin, F.X. [Advanced Composites Centre for Innovation and Science (ACCIS), Department of Aerospace Engineering, University of Bristol, Bristol BS8 1TR (United Kingdom); Xing, D.W.; Cao, F.Y. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Peng, H.X. [Advanced Composites Centre for Innovation and Science (ACCIS), Department of Aerospace Engineering, University of Bristol, Bristol BS8 1TR (United Kingdom); Bristol Centre for NanoScience and Quantum Information (NSQI), University of Bristol, Bristol BS8 1FD (United Kingdom); Sun, J.F., E-mail: jfsun@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2013-12-01

Highlights: • Nano/amorphous dual-phase FINEMET microwire was fabricated and characterized. • The unique dual-phase structure is correlated to its different cooling experience. • The extracted microwires possess high tensile strength over 1800 MPa. • Excellent EMI property was elucidated by the multiple magnetic loss mechanisms. -- Abstract: A nano/amorphous dual-phase FINEMET microwire was fabricated directly from molten alloy without any interstage annealing by a home-built melt extraction technique (MET). The microstructure, mechanical and pronounced electromagnetic interference shielding (EMI) effectiveness of this dual-phase microwire has been systematically evaluated. The structural analysis reveals that the as-cast FINEMET microwire consists of two distinct structures, i.e., amorphous and nanocrystalline phase due to their different cooling characteristics. Compared with other reported FINEMET alloys, the extracted microwire exhibits a superior high tensile strength of 1800 MPa. These nanocrystals enabled dual-phase microwires also exhibit large EMI SE values in the frequency range of 8–12 GHz (X-band) due to the multiple magnetic loss mechanisms associated with their intrinsic structural characteristics. The combination of excellent mechanical properties and electromagnetic properties make this kind of melt-extracted dual-phase FINEMET microwire promising for a range of structure and multifunctional applications.

Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-05-01

Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a -IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal—metal or oxygen—oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a -IGZO, the most important point defects are metal—metal bonds (or small metal clusters) and peroxides (O - O single bonds). Electrons are captured by metal—metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a -IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides.

Post-treatment of Plasma-Sprayed Amorphous Ceramic Coatings by Spark Plasma Sintering

Science.gov (United States)

Chraska, T.; Pala, Z.; Mušálek, R.; Medřický, J.; Vilémová, M.

2015-04-01

Alumina-zirconia ceramic material has been plasma sprayed using a water-stabilized plasma torch to produce free standing coatings. The as-sprayed coatings have very low porosity and are mostly amorphous. The amorphous material crystallizes at temperatures above 900 °C. A spark plasma sintering apparatus has been used to heat the as-sprayed samples to temperatures above 900 °C to induce crystallization, while at the same time, a uniaxial pressure of 80 MPa has been applied to their surface. After such post-treatment, the ceramic samples are crystalline and have very low open porosity. The post-treated material exhibits high hardness and significantly increased flexural strength. The post-treated samples have a microstructure that is best described as nanocomposite with the very small crystallites embedded in an amorphous matrix.

Formation and Schottky barrier height of Au contacts to CuInSe2

International Nuclear Information System (INIS)

Nelson, A.J.; Gebhard, S.; Kazmerski, L.L.; Colavita, E.; Engelhardt, M.; Hoechst, H.

1991-01-01

Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the Au/CuInSe 2 interface. Au overlayers were deposited in steps on single-crystal p and n-type CuInSe 2 at ambient temperature. Reflection high-energy electron diffraction analysis before and during growth of the Au overlayers indicated that the Au overlayer was amorphous. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the Au/CuInSe 2 Schottky barrier height

Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects

Science.gov (United States)

Hsu, Kuo-Chung; Perng, Dung-Ching; Yeh, Jia-Bin; Wang, Yi-Chun

2012-07-01

A 5 nm thick Cr added Ru film has been extensively investigated as a seedless Cu diffusion barrier. High-resolution transmission electron microscopy micrograph, X-ray diffraction (XRD) pattern and Fourier transform-electron diffraction pattern reveal that a Cr contained Ru (RuCr) film has a glassy microstructure and is an amorphous-like film. XRD patterns and sheet resistance data show that the RuCr film is stable up to 650 °C, which is approximately a 200 °C improvement in thermal stability as compared to that of the pure Ru film. X-ray photoelectron spectroscopy depth profiles show that the RuCr film can successfully block Cu diffusion, even after a 30-min 650 °C annealing. The leakage current of the Cu/5 nm RuCr/porous SiOCH/Si stacked structure is about two orders of magnitude lower than that of a pristine Ru sample for electric field below 1 MV/cm. The RuCr film can be a promising Cu diffusion barrier for advanced Cu metallization.

Application of amorphous filler metals in production of fusion reactor high heat flux components

Energy Technology Data Exchange (ETDEWEB)

Kalin, B A [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Fedotov, V T [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Grigoriev, A E [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Sevriukov, O N [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Pliushev, A N [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Skuratov, L A [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Polsky, V I [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Yakushin, V L [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation); Virgiliev, Yu S [State Research Institute of Graphite, Electrodnaya St. 2, 115524 Moscow (Russian Federation); Vasiliev, V L [TRINITI, Troitsk, 142092 Moscow District (Russian Federation); Tserevitinov, S S [TRINITI, Troitsk, 142092 Moscow District (Russian Federation)

1995-03-01

Amorphous ribbon-type filler metals represent a promising facility for fastening heterogeneous materials together. The advantage results from the homogeneity of element and phase compositions and the strictly specified geometrical dimensions of such fillers. Amorphous fillers Zr-Ti-Fe-Be, Zr-Ti-Ni-Cu and Ti-Zr-Ni-Cu and microcrystalline fillers Al-Si and Cu-Sn-Mn-In-Ni were produced by quenching at a rate of about 10{sup 6}Ks{sup -1}. Brazing of graphite with metals (Cu+MPG-6, Cu+RGT, Mo+MIG-1, V+MIG-1, V+RGT) was accomplished using ribbon-type fillers. Two types of metal-based samples were produced in the form of plates and rakes. The rakes were made by brazing three small graphite bars to the metal, the 2mm space between the bars being 0.25 of the bar height. The results of metallographic studies of the brazing zone and of tests on brazed structures treated by pulsed energy fluxes are discussed. (orig.).

Structure and giant magnetoresistance of carbon-based amorphous films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ma, L.; He, M.F.; Liu, Z.W.; Zeng, D.C.; Gu, Z.F.; Cheng, G.

2014-01-01

Pure amorphous carbon (a-C) and Co-doped Co x C 1−x films were prepared on n-Si(100) substrates by dc magnetron sputtering. In Co–C films, the nano-sized amorphous Co particles were homogeneously dispersed in the amorphous cross-linked carbon matrix. The structures of a-C and Co x C 1−x films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The results showed that the a-C films were diamond-like carbon (DLC) films. After doping cobalt into DLC film, the sp 3 -hybridized carbon content in DLC composite films almost had no change. The as-deposited Co x C 1−x granular films had larger value of magnetoresistance (MR) than the amorphous carbon film. A very high positive MR, up to 15.5% at magnetic field B = 0.8 T and x = 2.5 at.% was observed in a Co x C 1−x granular film with thickness of 80 nm at room temperature when the external magnetic field was perpendicular to the electric current and the film surface. With increase of the film thickness and Co-doped content, the MR decreased gradually. It remains a challenge to well explain the observed MR effect in the Co x C 1−x granular films. - Highlights: • The amorphous carbon films were diamond-like carbon films. • No carbide appearing, the Co–C composite films form a good metal/insulator system. • A high positive magnetoresistance, up to 15.5% at B = 0.8 T was observed in Co–C films

Influence of PVP molecular weight on the microwave assisted in situ amorphization of indomethacin

DEFF Research Database (Denmark)

Doreth, Maria; Löbmann, Korbinian; Priemel, Petra

2018-01-01

. After plasticization by moisture, PVP K12 reached a Tg below ambient temperature (16 ± 2 °C) indicating that the Tg of the plasticized polymer is a key factor for the success of in situ amorphization. DSC analysis showed that the amorphized drug was part of a ternary glass solution consisting of IND......, PVP K12 and water. In dissolution tests, IND:PVP K12 compacts showed a delayed initial drug release due to a lack of compact disintegration, but reached a higher total drug release eventually. In summary, this study showed that the microwave assisted in situ amorphization was highly dependent...... on the Tg of the plasticized polymer....

Performance comparison between crystalline and co-amorphous salts of indomethacin-lysine

DEFF Research Database (Denmark)

Kasten, Georgia; Nouri, Khatera; Grohganz, Holger

2017-01-01

The introduction of a highly water soluble amino acid as co-amorphous co-former has previously been shown to significantly improve the dissolution rate of poorly water soluble drugs. In this work, dry ball milling (DBM) and liquid assisted grinding (LAG) were used to prepare different physical...... forms of salts of indomethacin (IND) with the amino acid lysine (LYS), allowing the direct comparison of their solid-state properties to their in vitro performance. X-ray powder diffraction and Fourier-transformed infrared spectroscopy showed that DBM experiments led to the formation of a fully co......-amorphous salt, while LAG resulted in a crystalline salt. Differential scanning calorimetry showed that the samples prepared by DBM had a single glass transition temperature (Tg) of approx. 100°C for the co-amorphous salt, while a new melting point (223°C) was obtained for the crystalline salt prepared by LAG...

Kinetics and formation mechanism of amorphous Fe52Nb48 alloy powder fabricated by mechanical alloying

International Nuclear Information System (INIS)

El-Eskandarany, S.

1999-01-01

A single phase amorphous Fe 52 Nb 48 alloy has been synthesized through a solid state interdiffusion of pure polycrystalline Fe and Nb powders at room temperature, using a high-energy ball-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders have been investigated by means of X-ray diffraction, Moessbauer spectroscopy, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling time (0-56 ks), are intermixed to form amorphous phase(s) upon heating to about 625 K by so-called thermally assisted solid state amorphization, TASSA. The amorphization heat of formation for binary system via the TASSA, ΔH a , was measured directly as a function of the milling time. Comparable with the TASSA, homogeneous amorphous alloys were fabricated directly without heating the composite multilayered particles upon milling these particles for longer milling time (86 ks-144 ks). The amorphization reaction here is attributed to the mechanical driven solid state amorphization. This single amorphous phase transforms into an order phase (μ phase) upon heating at 1088 K (crystallization temperature, T x ) with enthalpy change of crystallization, ΔH x , of -8.3 kJmol -1 . (orig.)

Solid state characterization of commercial crystalline and amorphous atorvastatin calcium samples.

Science.gov (United States)

Shete, Ganesh; Puri, Vibha; Kumar, Lokesh; Bansal, Arvind K

2010-06-01

Atorvastatin calcium (ATC), an anti-lipid BCS class II drug, is marketed in crystalline and amorphous solid forms. The objective of this study was to perform solid state characterization of commercial crystalline and amorphous ATC drug samples available in the Indian market. Six samples each of crystalline and amorphous ATC were characterized using X-ray powder diffractometry (XRPD), differential scanning calorimetry (DSC), thermogravimetric analysis, Karl Fisher titrimetry, microscopy (hot stage microscopy, scanning electron microscopy), contact angle, and intrinsic dissolution rate (IDR). All crystalline ATC samples were found to be stable form I, however one sample possessed polymorphic impurity, evidenced in XRPD and DSC analysis. Amongst the amorphous ATC samples, XRPD demonstrated five samples to be amorphous 'form 27', while, one matched amorphous 'form 23'. Thermal behavior of amorphous ATC samples was compared to amorphous ATC generated by melt quenching in DSC. ATC was found to be an excellent glass former with T(g)/T(m) of 0.95. Residual crystallinity was detected in two of the amorphous samples by complementary use of conventional and modulated DSC techniques. The wettability and IDR of all amorphous samples was found to be higher than the crystalline samples. In conclusion, commercial ATC samples exhibited diverse solid state behavior that can impact the performance and stability of the dosage forms.

Evidence for nano-Si clusters in amorphous SiO anode materials for rechargeable Li-ion batteries

International Nuclear Information System (INIS)

Sepehri-Amin, H.; Ohkubo, T.; Kodzuka, M.; Yamamura, H.; Saito, T.; Iba, H.; Hono, K.

2013-01-01

Atom probe tomography and high resolution transmission electron microscopy have shown the presence of nano-sized amorphous Si clusters in non-disproportionated amorphous SiO powders are under consideration for anode materials in Li-ion batteries. After Li insertion/extraction, no change was found in the chemistry and structure of the Si clusters. However, Li atoms were found to be trapped at the amorphous SiO phase after Li insertion/extraction, which may be attributed to the large capacity fade after the first charge/discharge cycle