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Sample records for high al stress

  1. Corrosion resistance of Fe-Al alloy-coated steel under bending stress in high temperature lead-bismuth eutectic

    International Nuclear Information System (INIS)

    Yamaki, Eriko; Takahashi, Minoru

    2009-01-01

    Formation of thin Fe-Al alloy layers on the surface of cladding and structural materials is effective to protect a base material from corrosion in high temperature LBE. However, it is concerned that these protective layers may be damaged under various stress conditions. This study on Fe-Al alloy coatings deposited by unbalanced magnetron sputtering (UBMS) is focused to evaluate corrosion resistance and integrity of the Fe-Al coating layers with thickness of 0.5 mm under bending stress in high temperature LBE. High chromium steel specimens (HCM12A, Recloy10) with Fe-Al alloy coating were exposed to LBE pool with low oxygen concentration (up to 5.2x10 -8 wt%) at 550 and 650degC under 45kg-loading for 240 and 500 h. No LBE corrosion was observed in the base metal and coating layer after the tests at 550degC for 550 h. The coating layers could be barrier for corrosion resistance from LBE at 550degC, although the coating scales are cracked by the load. At 650degC, because the base metal was contoccured directly with LBE through cracks across the coating layer. Penetration of LBE to base metal and dissolution of beset metal into LBE occurred. Fe-Al coating layer was not corroded by LBE. (author)

  2. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

    2009-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

    Directory of Open Access Journals (Sweden)

    W. A. Sasangka

    2016-09-01

    Full Text Available Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs. We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2 at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2. Dislocation movement correlates well with high tensile stress (∼1.6 GPa at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 00 } and 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 01 } slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

  4. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    International Nuclear Information System (INIS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-01-01

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

  5. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    International Nuclear Information System (INIS)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-01-01

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing

  6. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Science.gov (United States)

    Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

    2015-02-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  7. Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Ling, Yang; Gui-Zhou, Hu; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Li-Yuan, Yang; Shou-Gao, Jiang

    2010-01-01

    This paper investigates the impact of electrical degradation and current collapse on different thickness SiN x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN x passivation located in the gate-drain region. As the thickness of SiN x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Energy Technology Data Exchange (ETDEWEB)

    Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X. [School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C. [Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553 (Singapore)

    2015-02-23

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  9. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    International Nuclear Information System (INIS)

    Anand, M. J.; Ng, G. I.; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

    2015-01-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON] ) and threshold-voltage shift (ΔV th ) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I DS -V DS ) and drain current (I D ) transients. Different EF was realized with devices of different gate-drain spacing (L gd ) under the same OFF-state stress. Under high-EF (L gd  = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔV th (∼120 mV). However, at low-EF (L gd  = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔV th (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV th . A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I D -transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations

  10. Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

    International Nuclear Information System (INIS)

    Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

    2015-01-01

    Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites

  11. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang, E-mail: yiqiang-chen@hotmail.com; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei [Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The 5th Electronics Research Institute of the Ministry of Industry and Information Technology, 510610 Guangzhou (China)

    2015-09-28

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  12. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  13. Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

    Directory of Open Access Journals (Sweden)

    Jung Jin Park

    2016-05-01

    Full Text Available Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011 grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat =  λ∥ − λ⊥ of ∼280 ppm and ∼130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA. Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ∼60% to within ∼80% of λsat. The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ∼46% to ∼56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing

  14. Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

    Science.gov (United States)

    Park, Jung Jin; Na, Suok-Min; Raghunath, Ganesh; Flatau, Alison B.

    2016-05-01

    Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011) grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat = λ∥ - λ⊥) of ˜280 ppm and ˜130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA). Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ˜60% to within ˜80% of λsat). The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ˜46% to ˜56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing/energy harvesting

  15. On the effect of deep-rolling and laser-peening on the stress-controlled low- and high-cycle fatigue behavior of Ti-6Al-4V at elevated temperatures up to 550?C

    Energy Technology Data Exchange (ETDEWEB)

    Ritchie, IAltenberger, RKNalla, YSano LWagner, RO

    2012-04-01

    The effect of surface treatment on the stress/life fatigue behavior of a titanium Ti-6Al-4V turbine fan blade alloy is investigated in the regime of 102 to 106 cycles to failure under fully reversed stress-controlled isothermal push-pull loading between 25? and 550?C at a frequency of 5 Hz. Specifically, the fatigue behavior was examined in specimens in the deep-rolled and laser-shock peened surface conditions, and compared to results on samples in the untreated (machined and stress annealed) condition. Although the fatigue resistance of the Ti-6Al-4V alloy declined with increasing test temperature regardless of surface condition, deep-rolling and laser-shock peening surface treatments were found to extend the fatigue lives by factors of more than 30 and 5-10, respectively, in the high-cycle and low-cycle fatigue regimes at temperatures as high as 550?C. At these temperatures, compressive residual stresses are essentially relaxed; however, it is the presence of near-surface work hardened layers, with a nanocystalline structure in the case of deep-rolling and dense dislocation tangles in the case of laser-shock peening, which remain fairly stable even after cycling at 450?-550?C, that provide the basis for the beneficial role of mechanical surface treatments on the fatigue strength of Ti-6Al-4V at elevated temperatures.

  16. Residual Stress Measurement of SiC tile/Al7075 Hybrid Composites by Neutron Diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong Bok; Lee, Jun Ho; Hong, Soon Hyung; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of); Lee, Sang Bok; Lee, Sang Kwan [Korea Institute of Materials Science, Changwon (Korea, Republic of); Muslihd, M. Rifai [Center for Advanced Materials Science and Technology, Tangerang (India)

    2016-05-15

    In this research, SiC which has low density, high compressive strength, and high elastic modulus was used to fabricate the armor plate. In addition, Al which has low density and high toughness was used for a metal matrix of the composites. If two materials are combined, the composite can be effective materials for light weight armor applications. However, the existence of a large difference in coefficients of thermal expansion (CTE) between SiC and Al matrix, SiC/Al composites can have residual stresses while cooled in the fabrication process. Previous research reported that residual stresses in the composites or microstructures have an effect on the fatigue life and their mechanical properties. Some researchers reported about the residual stresses in the SiCp/Al metal matrix composites by numerical simulation systems, X-ray diffraction, and destructive methods. In order to analyze the residual stress of SiC/Al composites, the neutron diffraction as the non-destructive method was performed in this research. The 50 vol.% SiC{sub p}/Al7075 composites and SiC tile inserted 50 vol.% SiC{sub p}/Al7075 hybrid composites were measured to analyze the residual stress of Al (111) and SiC (111). Both samples had the tensile residual stresses in the Al (111) and the compressive residual stresses in the SiC (111) due to the difference in CTE.

  17. Plastic deformation of Al13Fe4 particles in Al-Al13Fe4 by high-speed compression

    International Nuclear Information System (INIS)

    Yoneyama, N.; Mizoguchi, K.; Kumai, S.; Sato, A.; Kiritani, M.

    2003-01-01

    Spray-formed Al-Fe alloys having undergone high-speed deformation were examined under a high-voltage electron microscope. Two types of specimens were examined; one containing fine Al 13 Fe 4 particles, and the other containing large particles. In the former specimen, deformation is found to proceed in three patterns, depending on specimen thickness and strain rate: (1) without deformation of the Al 13 Fe 4 ; (2) breaking of the Al 13 Fe 4 ; or (3) melting of the Al 13 Fe 4 . Local melting is found to alter some of the Al 13 Fe 4 particles, to impart five-fold symmetry in diffraction or an amorphous structure. In the latter specimen, introduction of glide dislocations enabled us to determine a shear system in the mc102 monoclinic c2/m crystal of Al 13 Fe 4 . On the bases of these observations, the mechanism of high-speed deformation is discussed while taking into account the highly stressed and/or heated states of Al 13 Fe 4 embedded in Al matrix

  18. Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Ng, G. I.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.

    2015-01-01

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In 0.17 Al 0.83 N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W eff ) exhibited a very high I Dmax of 3940 mA/mm and a highest g m of 1417 mS/mm. This dramatic increase of I D and g m in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v e ) of 6.0 × 10 7  cm/s, which is ∼1.89× higher than that of the conventional In 0.17 Al 0.83 N/GaN HEMT (3.17 × 10 7  cm/s). The v e in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v e at 300 K in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v e  = 6 × 10 7  cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In 0.17 Al 0.83 N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications

  19. Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Arulkumaran, S., E-mail: SArulkumaran@pmail.ntu.edu.sg; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L. [Temasek Laboratories@NTU, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553 (Singapore); Ng, G. I., E-mail: eging@ntu.edu.sg [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Shoron, O. F.; Rajan, S. [Electrical and Computer Engineering Department, The Ohio State University, Columbus, Ohio 43210 (United States); Bin Dolmanan, S.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-02-02

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaN HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.

  20. Clinical Perspective of Oxidative Stress in Sporadic ALS

    Science.gov (United States)

    D’Amico, Emanuele; Factor-Litvak, Pam; Santella, Regina M.; Mitsumoto, Hiroshi

    2013-01-01

    Sporadic amyotrophic lateral sclerosis (sALS) is one of the most devastating neurological diseases; most patients die within 3 to 4 years after symptom onset. Oxidative stress is a disturbance in the pro-oxidative/anti-oxidative balance favoring the pro-oxidative state. Autopsy and laboratory studies in ALS indicate that oxidative stress plays a major role in motor neuron degeneration and astrocyte dysfunction. Oxidative stress biomarkers in cerebrospinal fluid, plasma, and urine, are elevated, suggesting that abnormal oxidative stress is generated outside of the central nervous system. Our review indicates that agricultural chemicals, heavy metals, military service, professional sports, excessive physical exertion, chronic head trauma, and certain foods might be modestly associated with ALS risk, with a stronger association between risk and smoking. At the cellular level, these factors are all involved in generating oxidative stress. Experimental studies indicate that a combination of insults that induce modest oxidative stress can exert additive deleterious effects on motor neurons, suggesting multiple exposures in real-world environments are important. As the disease progresses, nutritional deficiency, cachexia, psychological stress, and impending respiratory failure may further increase oxidative stress. Moreover, accumulating evidence suggests that ALS is possibly a systemic disease. Laboratory, pathologic, and epidemiologic evidence clearly support the hypothesis that oxidative stress is central in the pathogenic process, particularly in genetically susceptive individuals. If we are to improve ALS treatment, well-designed biochemical and genetic epidemiological studies, combined with a multidisciplinary research approach, are needed and will provide knowledge crucial to our understanding of ALS etiology, pathophysiology, and prognosis. PMID:23797033

  1. Residual stress in TI6AL4V objects produced by direct metal laser sintering

    Directory of Open Access Journals (Sweden)

    Van Zyl, Ian

    2016-12-01

    Full Text Available Direct Metal Laser Sintering produces 3D objects using a layer-by- layer method in which powder is deposited in thin layers. Laser beam scans over the powder fusing powder particles as well as the previous layer. High-concentration of laser energy input leads to high thermal gradients which induce residual stress within the as- built parts. Ti6Al4V (ELI samples have been manufactured by EOSINT M280 system at prescribed by EOS process-parameters. Residual stresses were measured by XRD method. Microstructure, values and directions of principal stresses inTi6Al4V DMLS samples were analysed.

  2. Stress granules at the intersection of autophagy and ALS.

    Science.gov (United States)

    Monahan, Zachary; Shewmaker, Frank; Pandey, Udai Bhan

    2016-10-15

    Amyotrophic lateral sclerosis (ALS) is a progressive, fatal disease caused by loss of upper and lower motor neurons. The majority of ALS cases are classified as sporadic (80-90%), with the remaining considered familial based on patient history. The last decade has seen a surge in the identification of ALS-causing genes - including TARDBP (TDP-43), FUS, MATR3 (Matrin-3), C9ORF72 and several others - providing important insights into the molecular pathways involved in pathogenesis. Most of the protein products of ALS-linked genes fall into two functional categories: RNA-binding/homeostasis and protein-quality control (i.e. autophagy and proteasome). The RNA-binding proteins tend to be aggregation-prone with low-complexity domains similar to the prion-forming domains of yeast. Many also incorporate into stress granules (SGs), which are cytoplasmic ribonucleoprotein complexes that form in response to cellular stress. Mutant forms of TDP-43 and FUS perturb SG dynamics, lengthening their cytoplasmic persistence. Recent evidence suggests that SGs are regulated by the autophagy pathway, suggesting a unifying connection between many of the ALS-linked genes. Persistent SGs may give rise to intractable aggregates that disrupt neuronal homeostasis, thus failure to clear SGs by autophagic processes may promote ALS pathogenesis. This article is part of a Special Issue entitled SI:Autophagy. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. RESIDUAL STRESS MEASUREMENTS AND STRUCTURAL INTEGRITY IMPLICATIONS FOR SELECTIVE LASER MELTED TI-6AL-4V

    Directory of Open Access Journals (Sweden)

    Knowles, C. R.

    2012-11-01

    Full Text Available Selective laser melting (SLM of Ti-6Al-4V has significant potential in the aerospace and biotechnology industries. SLM employs a focused laser beam to melt successive layers of metallic powder into complex components. This process can result in the generation of high thermally-induced residual stresses. These residual stresses, together with micro-flaws/ pores from the inherent fabrication process, may lead to premature fatigue crack initiation and propagation at relatively low cyclic stresses. The hole-drilling strain gauge method was used to evaluate residual stresses within SLM Ti-6Al-4V specimens, with the intention of understanding the associated mechanisms for the successful application of SLM Ti-6Al-4V in industry.

  4. Residual stress in sprayed Ni+5%Al coatings determined by neutron diffraction

    CERN Document Server

    Matejicek, J; Gnaeupel-Herold, T; Prask, H J

    2002-01-01

    Coatings of nickel-based alloys are used in numerous high-performance applications. Their properties and lifetimes are influenced by factors such as residual stress. Neutron diffraction is a powerful tool for nondestructive residual stress determination. In this study, through-thickness residual stress profiles in Ni+5%Al coatings on steel substrates were determined. Two examples of significantly different spraying techniques - plasma spraying and cold spraying - are highlighted. Different stress-generation mechanisms are discussed with respect to process parameters and material properties. (orig.)

  5. Sleep in High Stress Occupations

    Science.gov (United States)

    Flynn-Evans, Erin

    2014-01-01

    High stress occupations are associated with sleep restriction, circadian misalignment and demanding workload. This presentation will provide an overview of sleep duration, circadian misalignment and fatigue countermeasures and performance outcomes during spaceflight and commercial aviation.

  6. SEDflume - High Shear Stress Flume

    Data.gov (United States)

    Federal Laboratory Consortium — The U.S. Army Corps of Engineers High Shear Stress flume (SEDflume) is designed for estimating erosion rates of fine-grained and mixed fine/coarse grained sediments...

  7. Adaptation and survival of plants in high stress habitats via fungal endophyte conferred stress tolerance

    Science.gov (United States)

    Rodriguez, Rusty J.; Woodward, Claire; Redman, Regina S.

    2010-01-01

    From the Arctic to the Antarctic, plants thrive in diverse habitats that impose different levels of adaptive pressures depending on the type and degree of biotic and abiotic stresses inherent to each habitat (Stevens, 1989). At any particular location, the abundance and distribution of individual plant species vary tremendously and is theorized to be based on the ability to tolerate a wide range of edaphic conditions and habitat-specific stresses (Pianka, 1966). The ability of individual plant species to thrive in diverse habitats is commonly referred to as phenotypic plasticity and is thought to involve adaptations based on changes in the plant genome (Givnish, 2002; Pan et al., 2006; Robe and Griffiths, 2000; Schurr et al., 2006). Habitats that impose high levels of abiotic stress are typically colonized with fewer plant species compared to habitats imposing low levels of stress. Moreover, high stress habitats have decreased levels of plant abundance compared to low stress habitats even though these habitats may occur in close proximity to one another (Perelman et al., 2007). This is particularly interesting because all plants are known to perceive, transmit signals, and respond to abiotic stresses such as drought, heat, and salinity (Bartels and Sunkar, 2005; Bohnert et al., 1995). Although there has been extensive research performed to determine the genetic, molecular, and physiological bases of how plants respond to and tolerate stress, the nature of plant adaptation to high stress habitats remains unresolved (Leone et al., 2003; Maggio et al., 2003; Tuberosa et al., 2003). However, recent evidence indicates that a ubiquitous aspect of plant biology (fungal symbiosis) is involved in the adaptation and survival of at least some plants in high stress habitats (Rodriguez et al., 2008).

  8. Numerical simulation of stress distribution in Al2 O3-TiC/Q235 diffusion bonded joints

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The distributions of the axial stress and shear stress in Al2O3-TiC/Q235 diffusion bonded joints were studied using finite element method (FEM). The effect of interlayer thickness on the axial stress and shear stress was also investigated. The results indicate that the gradients of the axial stress and shear stress are great near the joint edge. The maximal shear stress produces at the interface of the Al2O3-TiC and Ti interlayer. With the increase of Cu interlayer thickness, the magnitudes of the axial stress and shear stress first decrease and then increase. The distribution of the axial stress changes greatly with a little change in the shear stress. The shear fracture initiates at the interface of the Al2O3-TiC/ Ti interlayer with high shear stress and then propagates to the Al2O3-TiC side, which is consistent with the stress FEM calculating results.

  9. Effect of stress evolution on microstructural behavior in U-Mo/Al dispersion fuel

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, G.Y. [Department of Nuclear Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Eonyang-eup, Ulju-gun, Ulsan 689-798 (Korea, Republic of); Kim, Yeon Soo; Jamison, L.M. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Robinson, A.B. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Lee, K.H. [Korea Atomic Energy Research Institute, 989-111 Daedeokdaero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Sohn, Dong-Seong, E-mail: dssohn@unist.ac.kr [Department of Nuclear Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Eonyang-eup, Ulju-gun, Ulsan 689-798 (Korea, Republic of)

    2017-04-15

    U-Mo/Al dispersion fuel irradiated to high burnup at high power (high fission rate) exhibited microstructural changes including deformation of the fuel particles, pore growth, and rupture of the Al matrix. The driving force for these microstructural changes was meat swelling resulting from a combination of fuel particle swelling and interaction layer (IL) growth. In some cases, pore growth in the interaction layers also contributed to meat swelling. The main objective of this work was to determine the stress distribution within the fuel meat that caused these phenomena. A mechanical equilibrium between the stress generated by fuel meat swelling and the stress relieved by fission-induced creep in the meat constituents (U-Mo particles, Al matrix, and IL) was considered. Test plates with well-recorded fabrication data and irradiation conditions were used, and their post-irradiation examination (PIE) data was obtained. ABAQUS finite element analysis (FEA) was utilized to simulate the microstructural evolution of the plates. The simulation results allowed for the determination of effective stress and hydrostatic stress exerted on the meat constituents. The effects of fabrication and irradiation parameters on the stress distribution that drives microstructural evolutions, such as pore growth in the IL and Al matrix rupture, were investigated. - Highlights: •Post-irradiation data for irradiated miniplates were analyzed by using their optical microscopy images. •ABAQUS finite element analysis (FEA) package was utilized to simulate the microstructural evolution of the selected plates. •Stresses were assessed to analyze their effects on microstructural changes during irradiation.

  10. Off-state stress and pulse response investigation of InAl/Ga HFET

    International Nuclear Information System (INIS)

    Florovic, M.; Hronec, P.; Kovac, J.; Skriniarova, J.; Donoval, D.; Kordos, P.

    2011-01-01

    In this study In 0.18 Al 0.82 N/GaN HFETs were off-state tested under high drain bias, I-V characteristics were measured using standard DC voltage source (drain-source, gate-source). Subsequently drain current responses on pulse gate-source voltage for various drain-source voltages were recorded and analysed. Static performance of InAlN/GaN HFETs with AlN buffer layer prepared at different conditions were analysed before, during and after the off-state stress. The static output I-V characteristics show the maximum drain current I d ≅ 0,44 A/mm for V gs = 6 V, the device has pinch-off at V gs - 4.4 V. The drain and gate currents of the InAlN/GaN HFET were measured continuously during the off-state stress (V ds = 30 V, V gs = -4.4 V), a partial increase of the drain/gate current was observed after this interruption, which indicates on some recovery effect. The devices were characterised in details after the total stress time of 60 min., as well as after 30 min without the stress, the output I-V characteristic show permanent off-state stress degradation. This effect will be studied in details in the next. (authors)

  11. Grain Flow at High Stresses

    Science.gov (United States)

    McSaveney, M. J.

    2015-12-01

    The transport mechanism of rapid long-runout rock avalanches was a hotly debated topic when I came on the scene in 1967. So how come it is still debated today? My explanation is that it is the expected outcome of peer review, poor comprehension, and technological advances outpacing intellectual advances. Why think about the problem when we can model it! So let us think about the problem. Shreve thought that rock avalanches fell upon and trapped a layer of air. What physics was he thinking about? It is how feathers and tissue papers fall. When my rock avalanches fly, they fly like unlubricated bricks using the physics of projectiles and ballistics. But the main transport mechanism is not flight. The dominant impression from watching a rock avalanche in motion is of fluid flow, as Heim described it in 1882. A rock avalanche is a very large grain flow. Bagnold studied dispersive grain flows, but why should one assume that rock avalanches are dispersive grain flows as many do. The more common grain flow type is a dense grain flow and rock avalanches are dense grain flows in which the weight can and does generate very high stresses at grain contacts. Brittle rock deforms elastically up to its compressive strength, whereupon it breaks, releasing elastic strain as transient elastic strain (seismic energy to a seismologist, acoustic energy to a physicist). Melosh and others have shown that acoustic energy can fluidize a grain mass. There is no exotic physics behind grain flow at high stress. When grains break, the released elastic strain has to go somewhere, and it goes somewhere principally by transmission though grain contacts. Depending on the state of stress at the grain contact, the contact will pass the stress or will slip at conventional values of Coulomb friction. Enough thinking! A physical model of the entire process is too big for any laboratory. So whose numerical model will do it?

  12. Stress overshoot in stress-strain curves of Zr65Al10Ni10Cu15 metallic glass

    International Nuclear Information System (INIS)

    Kawamura, Y.; Shibata, T.; Inoue, A.; Masumoto, T.

    1997-01-01

    The essential features of the stress overshoot in the stress-strain curves of Zr 65 Al 10 Ni 10 Cu 15 (at.%) metallic glass that has a wide supercooled liquid region were revealed. The stress overshoot was dependent on temperature, strain rate, and stress relaxation. During the stretch, a change in strain rate gave rise to stress overshoot or undershoot which was sensitive to the variable quantities in the strain rate. copyright 1997 American Institute of Physics

  13. Stress evolution during and after sputter deposition of thin Cu Al alloy films

    Science.gov (United States)

    Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

    2008-06-01

    The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

  14. High Caloric Diet for ALS Patients: High Fat, High Carbohydrate or High Protein

    Directory of Open Access Journals (Sweden)

    Sarvin Sanaie

    2015-01-01

    Full Text Available ALS is a fatal motor neurodegenerative disease characterized by muscle atrophy and weakness, dysarthria, and dysphagia. The mean survival of ALS patients is three to five years, with 50% of those diagnosed dying within three years of onset (1. A multidisciplinary approach is crucial to set an appropriate plan for metabolic and nutritional support in ALS. Nutritional management incorporates a continuous assessment and implementation of dietary modifications throughout the duration of the disease. The nutritional and metabolic approaches to ALS should start when the diagnosis of ALS is made and should become an integral part of the continuous care to the patient, including nutritional surveillance, dietary counseling, management of dysphagia, and enteral nutrition when needed. Malnutrition and lean body mass loss are frequent findings in ALS patients necessitating comprehensive energy requirement assessment for these patients. Malnutrition is an independent prognostic factor for survival in ALS with a 7.7 fold increase in risk of death. Malnutrition is estimated to develop in one quarter to half of people with ALS (2. Adequate calorie and protein provision would diminish muscle loss in this vulnerable group of patients. Although appropriate amount of energy to be administered is yet to be established, high calorie diet is expected to be effective for potential improvement of survival; ALS patients do not normally receive adequate  intake of energy. A growing number of clinicians suspect that a high calorie diet implemented early in their disease may help people with ALS meet their increased energy needs and extend their survival. Certain high calorie supplements appear to be safe and well tolerated by people with ALS according to studies led by Universitäts klinikum Ulm's and, appear to stabilize body weight within 3 months. In a recent study by Wills et al., intake of high-carbohydrate low-fat supplements has been recommended in ALS patients (3

  15. High Temperature AL-Nanocrystal Alloy Synthesis

    National Research Council Canada - National Science Library

    Perepezko, J

    2001-01-01

    Aluminum-rich metallic glasses containing transition metals and rare earth elements have been found to yield finely mixed microstructures of Al nanocrystals embedded in an amorphous matrix and exhibit...

  16. Friction & Wear Under Very High Electromagnetic Stress

    National Research Council Canada - National Science Library

    Cowan, Richard S; Danyluk, Steven; Moon, Francis; Ford, J. C; Brenner, Donald W

    2004-01-01

    This document summarizes initial progress toward advancing the fundamental understanding of the friction, wear and mechanics of interfaces subjected to extreme electromagnetic stress, high relative...

  17. Size-effect on stress behavior of the AlN/TiN film

    International Nuclear Information System (INIS)

    Chen, D.; Wang, Y.M.; Ma, X.L.

    2009-01-01

    The stress behavior of AlN/TiN superlattice film has been studied by means of a crystal-chemical atomic dynamics simulation based on first-principles calculations. The size-effects on stress behavior are demonstrated and discussed in detail. Stress behavior depends not only on AlN thickness but also on structural relaxation and strain distribution in the film. When the AlN thickness exceeds a critical one, the superlattice film is metastable. Stress behavior can be traced to the AlN/TiN interface structure and its variation with strain relaxation, which may reflect the main strain characteristics caused by AlN structural transformation in this film.

  18. An Assessment of Subsurface Residual Stress Analysis in SLM Ti-6Al-4V

    Directory of Open Access Journals (Sweden)

    Tatiana Mishurova

    2017-03-01

    Full Text Available Ti-6Al-4V bridges were additively fabricated by selective laser melting (SLM under different scanning speed conditions, to compare the effect of process energy density on the residual stress state. Subsurface lattice strain characterization was conducted by means of synchrotron diffraction in energy dispersive mode. High tensile strain gradients were found at the frontal surface for samples in an as-built condition. The geometry of the samples promotes increasing strains towards the pillar of the bridges. We observed that the higher the laser energy density during fabrication, the lower the lattice strains. A relief of lattice strains takes place after heat treatment.

  19. Piezoelectrically-induced stress-luminescence phenomenon in CaAl2O4:Eu2+

    International Nuclear Information System (INIS)

    Wei, Yongbin; Wu, Zheng; Jia, Yanmin; Liu, Yongsheng

    2015-01-01

    Piezoelectrically-induced stress-luminescence in the CaAl 2 O 4 :Eu 2+ was investigated. Blue light that was visible to the naked eye could be observed in the dark when a pulse force of ∼7.7 kN was applied to the sample. The intensity of the stress-luminescence strongly depended on the magnitude of the applied force during a pulse cycle. The intensity decreased with repetitive application of pulse stress and was completely recovered after irradiation with ultraviolet light. It is suggested that the stress-luminescence effect in CaAl 2 O 4 :Eu 2+ arises from the piezoelectrically-induced de-trapping of the charge carriers. A CaAl 2 O 4 :Eu 2+ ceramic that exhibits a stress-luminescence effect has potential applications in smart stress optically-sensing devices. - Highlights: • The strong induced stress-luminescence in CaAl 2 O 4 :Eu 2+ was observed. • The stress-luminescent intensity strongly depends on the magnitude of force. • The stress-luminescence could be completely recovered after the UV irradiation. • The strong stress-luminescent effect is potential in stress-light sensors

  20. The Staphylococcus aureus α-Acetolactate Synthase ALS Confers Resistance to Nitrosative Stress

    Directory of Open Access Journals (Sweden)

    Sandra M. Carvalho

    2017-07-01

    Full Text Available Staphylococcus aureus is a worldwide pathogen that colonizes the human nasal cavity and is a major cause of respiratory and cutaneous infections. In the nasal cavity, S. aureus thrives with high concentrations of nitric oxide (NO produced by the innate immune effectors and has available for growth slow-metabolizing free hexoses, such as galactose. Here, we have used deep sequencing transcriptomic analysis (RNA-Seq and 1H-NMR to uncover how S. aureus grown on galactose, a major carbon source present in the nasopharynx, survives the deleterious action of NO. We observed that, like on glucose, S. aureus withstands high concentrations of NO when using galactose. Data indicate that this resistance is, most likely, achieved through a distinct metabolism that relies on the increased production of amino acids, such as glutamate, threonine, and branched-chain amino acids (BCAAs. Moreover, we found that under NO stress the S. aureus α-acetolactate synthase (ALS enzyme, which converts pyruvate into α-acetolactate, plays an important role. ALS is proposed to prevent intracellular acidification, to promote the production of BCAAs and the activation of the TCA cycle. Additionally, ALS is shown to contribute to the successful infection of murine macrophages. Furthermore, ALS contributes to the resistance of S. aureus to beta-lactam antibiotics such as methicillin and oxacillin.

  1. High-temperature deformation behavior and mechanical properties of rapidly solidified Al-Li-Co and Al-Li-Zr alloys

    International Nuclear Information System (INIS)

    Sastry, S.M.L.; Oneal, J.E.

    1984-01-01

    The deformation behavior at 25-300 C of rapidly solidified Al-3Li-0.6Co and Al-3Li-0.3Zr alloys was studied by tensile property measurements and transmission electron microscopic examination of dislocation substructures. In binary Al-3Li and Al-3Li-Co alloys, the modulus normalized yield stress increases with an increase in temperature up to 150 C and then decreases. The yield stress at 25 C of Al-3Li-0.3Zr alloys is 180-200 MPa higher than that of Al-3Li alloys. However, the yield stress of the Zr-containing alloy decreases drastically with increasing temperatures above 75 C. The short-term yield stresses at 100-200 C of the Al-3Li-based alloys are higher than that of the conventional high-temperature Al alloys. The temperature dependences of the flow stresses of the alloys were analyzed in terms of the magnitudes and temperature dependences of the various strengthening contributions in the two alloys. The dislocation substructures at 25-300 C were correlated with mechanical properties. 19 references

  2. Mining highly stressed areas, part 1.

    CSIR Research Space (South Africa)

    Johnson, R

    1995-12-01

    Full Text Available The aim of this long-term project has been to focus on the extreme high-stress end of the mining spectrum. Such high stress conditions will prevail in certain ultra-deep mining operation of the near future, and are already being experienced...

  3. Managing Stress to Control High Blood Pressure

    Science.gov (United States)

    ... Aortic Aneurysm More Managing Stress to Control High Blood Pressure Updated:Jan 29,2018 The importance of stress ... This content was last reviewed October 2016. High Blood Pressure • Home • Get the Facts About HBP • Know Your ...

  4. Role of microstructure in the mean stress dependence of fatigue strength in Ti-6Al-4V alloy

    Energy Technology Data Exchange (ETDEWEB)

    Ivanova, S.G.; Cohen, F.S.; Biederman, R.R.; Sisson, R.D. Jr.

    1999-07-01

    The high cycle fatigue properties of Ti-6Al-4V alloy with six different microstructure/texture combinations were investigated. Only materials with lamellar and fine bimodal microstructures exhibited linear Goodman relationship on the constant fatigue life diagram. Materials with coarse bimodal and equiaxed microstructures had anomalous mean stress dependency, with HCF strength at intermediate mean stresses being significantly lower than predicted by Goodman relationship, regardless of whether material was forged or cross-rolled. The role of microstructure in mean stress sensitivity behavior of Ti-6Al-4V is studied. Cyclic strain tests were conducted for all microstructures, and the results of strain-controlled and stress-controlled cyclic tests are compared and discussed.

  5. High temperature aqueous stress corrosion testing device

    International Nuclear Information System (INIS)

    Bornstein, A.N.; Indig, M.E.

    1975-01-01

    A description is given of a device for stressing tensile samples contained within a high temperature, high pressure aqueous environment, thereby permitting determination of stress corrosion susceptibility of materials in a simple way. The stressing device couples an external piston to an internal tensile sample via a pull rod, with stresses being applied to the sample by pressurizing the piston. The device contains a fitting/seal arrangement including Teflon and weld seals which allow sealing of the internal system pressure and the external piston pressure. The fitting/seal arrangement allows free movement of the pull rod and the piston

  6. Tensile behaviour at room and high temperatures of novel metal matrix composites based on hyper eutectic Al-Si alloys

    International Nuclear Information System (INIS)

    Valer, J.; Rodriguez, J.M.; Urcola, J.J.

    1997-01-01

    This work shows the improvement obtained on tensile stress at room and high temperatures of hyper eutectic Al-Si alloys. These alloys are produced by a combination of spray-forming, extrusion and thixoforming process, in comparison with conventional casting alloys.Al-25% Si-5%Cu. Al-25%Si-5%Cu-2%Mg and Al-30%Si-5%Cu alloys have been studied relating their microstructural parameters with tensile stress obtained and comparing them with conventional Al-20%Si. Al-36%Si and Al-50%Si alloys. Al-25%Si-5%Cu alloy-was tested before and after semi-solid forming, in order to distinguish the different behaviour of this alloy due to the different microstructure. The properties obtained with these alloys were also related to Al-SiC composites formed by similar processes. (Author) 20 refs

  7. The modified indeterminate couple stress model: Why Yang et al.'s arguments motivating a symmetric couple stress tensor contain a gap and why the couple stress tensor may be chosen symmetric nevertheless

    OpenAIRE

    Münch, Ingo; Neff, Patrizio; Madeo, Angela; Ghiba, Ionel-Dumitrel

    2015-01-01

    We show that the reasoning in favor of a symmetric couple stress tensor in Yang et al.'s introduction of the modified couple stress theory contains a gap, but we present a reasonable physical hypothesis, implying that the couple stress tensor is traceless and may be symmetric anyway. To this aim, the origin of couple stress is discussed on the basis of certain properties of the total stress itself. In contrast to classical continuum mechanics, the balance of linear momentum and the balance of...

  8. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    International Nuclear Information System (INIS)

    Flötotto, D.; Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-01-01

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al 2 O 3 films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively

  9. Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

    Science.gov (United States)

    Lin, Tse Yang; Chung, Yee Ling; Li, Lin; Yao, Shude; Lee, Y. C.; Feng, Zhe Chuan; Ferguson, Ian T.; Lu, Weijie

    2010-08-01

    AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

  10. Stress corrosion cracking and hydrogen embrittlement of an Al-Zn-Mg-Cu alloy

    International Nuclear Information System (INIS)

    Song, R.G.; Dietzel, W.; Zhang, B.J.; Liu, W.J.; Tseng, M.K.; Atrens, A.

    2004-01-01

    The age hardening, stress corrosion cracking (SCC) and hydrogen embrittlement (HE) of an Al-Zn-Mg-Cu 7175 alloy were investigated experimentally. There were two peak-aged states during ageing. For ageing at 413 K, the strength of the second peak-aged state was slightly higher than that of the first one, whereas the SCC susceptibility was lower, indicating that it is possible to heat treat 7175 to high strength and simultaneously to have high SCC resistance. The SCC susceptibility increased with increasing Mg segregation at the grain boundaries. Hydrogen embrittlement (HE) increased with increased hydrogen charging and decreased with increasing ageing time for the same hydrogen charging conditions. Computer simulations were carried out of (a) the Mg grain boundary segregation using the embedded atom method and (b) the effect of Mg and H segregation on the grain boundary strength using a quasi-chemical approach. The simulations showed that (a) Mg grain boundary segregation in Al-Zn-Mg-Cu alloys is spontaneous, (b) Mg segregation decreases the grain boundary strength, and (c) H embrittles the grain boundary more seriously than does Mg. Therefore, the SCC mechanism of Al-Zn-Mg-Cu alloys is attributed to the combination of HE and Mg segregation induced grain boundary embrittlement

  11. Bending fatigue tests on SiC-Al tapes under alternating stress at room temperature

    Science.gov (United States)

    Herzog, J. A.

    1981-01-01

    The development of a testing method for fatigue tests on SiC-Al tapes containing a small amount of SiC filaments under alternating stress is reported. The fatigue strength curves resulting for this composite are discussed. They permit an estimate of its behavior under continuous stress and in combination with various other matrices, especially metal matrices.

  12. Stress Wave attenuation in SiC3D/Al Composite

    International Nuclear Information System (INIS)

    Yuan Chunyuan; Wang Yangwei; Li Guoju; Zhang Xu; Gao Jubin

    2013-01-01

    SiC 3D /Al composite is a kind of special composite with interpenetrating network microstructure. The attenuation properties of stress wave propagation along the SiC 3D /Al composite are studied by a Split Hopkinson Pressure Bar system and FEM simulations, and the attenuation mechanism is discussed in this paper. Results show that the attenuation rate of the stress wave in the composite is up to 1.73MPa·mm −1 . The reduction of the amplitude of waves is caused by that plenty of interfaces between SiC and Al within the composite acting with stress waves. When the incident plane wave reaches the SiC 3D /Al interface, reflection wave and transmission wave propagates in different directions along the irregular interface between SiC phase and aluminium phase due to the impedance mismatch of them, which leads to the divergence of stress wave. At the same time, some stress micro-focuses occurs in the aluminium phase for the complex wave superimposition, and some plastic deformation may take place within such micro-regions, which results in the consumption of stress wave energy. In conclusion, the stress wave attenuation is derived from divergence and consumption of stress wave.

  13. Synthesis and characterization of high volume fraction Al-Al2O3 nanocomposite powders by high-energy milling

    International Nuclear Information System (INIS)

    Prabhu, B.; Suryanarayana, C.; An, L.; Vaidyanathan, R.

    2006-01-01

    Al-Al 2 O 3 metal matrix composite (MMC) powders with volume fractions of 20, 30, and 50% Al 2 O 3 were synthesized by high-energy milling of the blended component powders. The particle sizes of Al 2 O 3 studied were 50 nm, 150 nm, and 5 μm. A uniform distribution of the Al 2 O 3 reinforcement in the Al matrix was successfully obtained after milling the powders for a period of 20 h at a ball-to-powder ratio of 10:1 in a SPEX mill. The uniform distribution of Al 2 O 3 in the Al matrix was confirmed by characterizing these nanocomposite powders by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-ray mapping, and X-ray diffraction (XRD) techniques

  14. Compensation effect of bacterium containing biofertilizer on the growth of Cucumis sativus L. under Al-stress conditions.

    Science.gov (United States)

    Tóth, Brigitta; Lévai, L; Kovács, B; Varga, Mária Borbélyné; Veres, Szilvia

    2013-03-01

    Biofertilizers are used to improve soil fertility and plant production in sustainable agriculture. However, their applicability depends on several environmental parameters. The aim of our study was to evaluate the effect of free-living bacteria containing fertilizer on the growth of cucumber (Cucumis sativus L. cvs. Delicates) under aluminium (Al) stress. Different responses to Al stress of cucumber growth parameters were examined in terms of root elongation and physiological traits, such as Spad index (relative chlorophyll value), biomass accumulation of root and shoot, Al uptake and selected element contents (Fe, Mn, Zn, Mg) of leaves and root. The applied bacteria containing biofertilizer contains Azotobacter chroococcum and Bacillus megaterium. The dry weights of cucumber shoots and roots decreased in line with the increasing Al concentration. Due to different Al treatments (10-3 M, 10-4 M) higher Al concentration was observed in the leaves, while the amounts of other elements (Fe, Mn, Zn, Mg) decreased. This high Al content of the leaves decreased below the control value when biofertilizer was applied. In the case of the roots the additional biofertilizer treatments compensated the effect of Al. The relative chlorophyll content was reduced during Al-stress in older plants and the biofertilizer moderated this effect. The root/shoot ratio was decreased in all the Al-treatments in comparison to the control. The living bacteria containing fertilizer also had a modifying effect. The root/shoot ratio increased at the 10-4 M Al2(SO4)2 + biofertilizer and 10-4 M Al(NO3)3 + biofertilizer treatments compared to the control and Al-treatments. According to our results the biofertilizer is an alternative nutrient supply for replacing chemical fertilizers because it enhances dry matter production. Biofertilizer usage is also offered under Al polluted environmental conditions. Although, the nutrient solution is a clean system where we can examine the main processes without

  15. Communication: a relationship between hardness and flow stress of ordered Zr3Al polycrystals

    International Nuclear Information System (INIS)

    Schulson, E.M.; Roy, J.A.

    1977-01-01

    The purpose of this note is to describe a relationship between hardness and flow stress for the ordered L1$sub 2$ phase Zr$sub 3$Al, a possible structural material for use in nuclear power reactors. Experimental data obtained with the Zr-8.9% Al alloy lead to the conclusion that the hardness of polycrystalline Zr$sub 3$Al obeys an expression of the Hall-Petch form. When combined with a similar expression for flow stress, established previously, a simple relationship is obtained for flow stress in terms of hardness of well annealed material. Hardness measurements thus provide a rapid and inexpensive assessment of the strength of Zr$sub 3$Al. 8 refs

  16. Comparative Investigations on the Stress Corrosion Behavior of α -Al Bronze and α Brass in Sodium Nitrite

    International Nuclear Information System (INIS)

    Ashour, E.A.

    1995-01-01

    The stress corrosion behavior of α- Aluminum bronze (copper [Cu] -7% Al) (UNS C 61400) has been investigated as compared to α- brass under slow strain in sodium nitrite solutions under open - circuit and different anodic potentials. While α- brass was quite susceptible to SCC, α- Al bronze was found to be resistant to SCC. The ratios of time to failure in solution to that in air and of maximum stress in solution to that in air decreased sharply with increase of anodic potential for α-brass but remained virtually constant for α- Al bronze. The mode of failure was predominantly ductile for α- Al bronze under various conditions. The stress corrosion cracking of α - brass has been shown to be promoted by relatively concentrated Na N O 2 and high anodic potentials. Previous explanations for the change of the mode of failure from intergranular at open circuit potential (OCP) to transgranular cracking under anodic potential were confirmed. The bronzes resistance to SCC was attributed to the presence of Al 2 O 3 on the alloy surface. 10 Figs

  17. Temporal dynamics of the response to Al stress in Eucalyptus grandis × Eucalyptus camaldulensis

    Directory of Open Access Journals (Sweden)

    Berenice K. de Alcântara

    2015-06-01

    Full Text Available Lipid peroxidation and root elongation of Eucalyptus grandis × Eucalyptus camaldulensis were studied under stress conditions in response to aluminum (Al, a metal known to limit agricultural productivity in acidic soils primarily due to reduced root elongation. In Brazil, the Grancam 1277 hybrid (E. grandis × E. camaldulensis has been planted in the "Cerrado", a region of the country with a wide occurrence of acidic soils. The present study demonstrated that the hybrid exhibited root growth reduction and increased levels of lipid peroxidation after 24h of treatment with 100 µM of Al, which was followed by a reduction in lipid peroxidation levels and the recovery of root elongation after 48h of Al exposure, suggesting a rapid response to the early stressful conditions induced by Al. The understanding of the temporal dynamics of Al tolerance may be useful for selecting more tolerant genotypes and for identifying genes of interest for applications in bioengineering.

  18. Correlation between the local stress and the grain misorientation in the polycrystalline Al2O3 measured by near-field luminescence spectroscopy

    Science.gov (United States)

    Tomimatsu, Toru; Takigawa, Ryo

    2018-06-01

    Owing to its high spatial resolution, near-field spectroscopy is a useful method for sensing the stress in a narrow region of submicron order. Here, on the basis of the highly resolved images obtained by near-field luminescence spectroscopy, we propose a statistical method of analyzing grain anisotropy-induced stress in polycrystalline Al2O3. We focus on two characteristics of a spectra: the intensity ratio and peak shift of luminescence of two lines (R1 and R2) from Al2O3 to discuss crystal orientation and stress, respectively. By incorporating the concept of the crystal misorientation parameter using intensity ratio, an apparent correlation between the magnitude of stress and the misorientation is found. This correlation analysis provides an important insight for the investigation of local thermal stress in Al2O3.

  19. Investigation of Performance and Residual Stress Generation of AlSi10Mg Processed by Selective Laser Melting

    Directory of Open Access Journals (Sweden)

    Lianfeng Wang

    2018-01-01

    Full Text Available During the selective laser melting (SLM process, the scanned layers are subjected to rapid thermal cycles. By working on the mechanical properties, residual stress, and microstructure, the high-temperature gradients can have significant effect on the proper functioning and the structural integrity of built parts. This work presents a comprehensive study on the scanning path type and preheating temperature for AlSi10Mg alloy during SLM. According to the results, SLM AlSi10Mg parts fabricated in chessboard scanning strategy have higher mechanical properties or at least comparable to the parts fabricated in uniformity scanning strategy. In the SLM processing, the residual stress in different parts of the specimen varies with temperature gradient, and the residual stress at the edge of the specimen is obviously larger than that at the center. Under the chessboard scanning and preheating temperature 160°C, the residual stress in each direction of the specimens reaches the minimum. Under different forming processes, the morphology of the microstructure is obviously different. With the increase of preheating temperature, the molten pool in the side surface is obviously elongated and highly unevenly distributed. From the coupling relationship between the residual stress and microstructure, it can be found that the microstructure of top surface is affected by residual stresses σx and σy. But the side surface is mainly governed by residual stress σy; moreover, the greater the residual stress, the more obvious the grain tilt. In the XY and XZ surfaces, the scanning strategy has little influence on the tilt angle of the grain. But, the tilt angle and morphology of the microstructure are obviously affected by the preheating temperature. The results show that the residual stresses can effectively change the properties of the materials under the combined influence of scanning strategy and preheating temperature.

  20. The microstructure, mechanical stress, texture, and electromigration behavior of Al-Pd alloys

    Science.gov (United States)

    Rodbell, K. P.; Knorr, D. B.; Mis, J. D.

    1993-06-01

    As the minimum feature size of interconnect lines decreases below 0.5 urn, the need to control the line microstructure becomes increasingly important. The alloy content, deposition process, fabrication method, and thermal history all determine the microstructure of an interconnect, which, in turn, affects its performance and reliability. The motivation for this work was to characterize the microstructure of various sputtered Al-Pd alloys (Al-0.3wt.%Pd, Al-2Cu-0.3Pd, and Al-0.3Nb-0.3Pd) vs sputtered Al-Cu control samples (Al-0.5Cu and Al-2Cu) and to assess the role of grain size, mechanical stress, and crystallographic texture on the electromigration behavior of submicrometer wide lines. The grain size, mechanical stress, and texture of blanket films were measured as a function of annealing. The as-deposited film stress was tensile and followed a similar stress history on heating for all of the films; on cooling, however, significant differences were observed between the Al-Pd and Al-Cu films in the shape of their stress-temperature-curves. A strong (111) crystallographic texture was typically found for Al-Cu films deposited on SiO2. A stronger (111) texture resulted when Al-Cu was deposited on 25 nm titanium. Al-0.3Pd films, however, exhibited either a weak (111) or (220) texture when deposited on SiO2, which reverted to a strong (111) texture when deposited on 25 nm titanium. The electromigration lifetimes of passivated, ≈0.7 μm wide lines at 250°C and 2.5 × 106 A/cm2 for both single and multi-level samples (separated with W studs) are reported. The electromigration behavior of Al-0.3Pd was found to be less dependent on film microstructure than on the annealing atmosphere used, i.e. forming gas (90% N2-10%H2) annealed Al-0.3Pd films were superior to all of the alloys investigated, while annealing in only N2 resulted in poor lifetimes.

  1. Influence of secondary ageing temperature on hardening and residual elastic stresses in AlMgSi and AlMgSiCu alloys

    International Nuclear Information System (INIS)

    Milosavlevich, A.Ya.; Shiyachki-Zheravchich; Rogulin, M.Ya.; Milenkovich, V.M.; Prokich-Tsvetkovich, R.M.

    1993-01-01

    The investigations were conducted on samples of AlMgSi and AlMgSiCu alloys quenched, aged and cold worked with 20, 40, 60 and 85 % reduction in area. Secondary ageing was carried out at 200 and 250 deg C. Residual stresses wee determined by X-ray diffraction method. It was shown that cold deformation effect on hardness and residual stresses is dependent on alloy composition. The hardening due to secondary ageing is more pronounced for AlMgSi alloy at 200 deg C and for AlMgSiCu alloy at 250 deg C. Positive residual stresses increase with secondary ageing temperature

  2. Stress concentration effects in high pressure components

    International Nuclear Information System (INIS)

    Aller, J.E.

    1990-01-01

    This paper examines the stress concentration effects of sideholes in thick walled, high pressure cylinders. It has been shown that the theoretical stress concentration factor at the intersection of a small crossbore in a closed end, thick walled cylinder varies between 3.0 and 4.0. Tests have shown that this effect can be greatly reduced in practice by carefully radiusing the bore intersection and autofrettaging the cylinder. It has also been shown that the minimum stress concentration factor occurs when the main bore and sidehole or crossbore have the same diameter, and the radius of the intersection is approximately equal to the sidehole radius. When the bore and sidehole intersection angle decreases from 90 degrees, the stress concentration factor increases significantly. Knowledge of these fundamental relationships can be used in maintaining, as well ad designing, high pressure equipment

  3. High-temperature deformation of B2 NiAl-base alloys

    International Nuclear Information System (INIS)

    Lee, I.G.; Ghosh, A.K.

    1994-01-01

    The high-temperature deformation behavior of three rapidly solidified and processed NiAl-base alloys--NiAl, NiAl containing 2 pct TiB 2 , and NiAl containing 4 pct HfC--have been studied and their microstructural and textural changes during deformation characterized. Compressions tests were conducted at 1,300 and 1,447 K at strain rates ranging from 10 -6 to 10 -2 s -1 . HfC-containing material showed dispersion strengthening as well as some degree of grain refinement over NiAl, while TiB 2 dispersoid-containing material showed grain refinement as well as secondary recrystallization and did not improve high-temperature strength. Hot-pack rolling was also performed to develop thin sheet materials (1.27-mm thick) and from these alloys. Without dispersoids, NiAl rolled easily at 1,223 K and showed low flow stress and good ductility during the hot-rolling operation. Rolling of dispersoid-containing alloys was difficult due to strain localization and edge-cracking effects, resulting partly from the high flow stress at the higher strain rate during the rolling operation. Sheet rolling initially produced a {111} texture, which eventually broke into multiple-texture components with severe deformation

  4. Modelling Of Residual Stresses Induced By High Speed Milling Process

    International Nuclear Information System (INIS)

    Desmaison, Olivier; Mocellin, Katia; Jardin, Nicolas

    2011-01-01

    Maintenance processes used in heavy industries often include high speed milling operations. The reliability of the post-process material state has to be studied. Numerical simulation appears to be a very interesting way to supply an efficient residual stresses (RS) distribution prediction.Because the adiabatic shear band and the serrated chip shaping are features of the austenitic stainless steel high speed machining, a 2D high speed orthogonal cutting model is briefly presented. This finite element model, developed on Forge registered software, is based on data taken from Outeiro and al.'s paper [1]. A new behaviour law fully coupling Johnson-Cook's constitutive law and Latham and Cockcroft's damage model is detailed in this paper. It ensures results that fit those found in literature.Then, the numerical tools used on the 2D model are integrated to a 3D high speed milling model. Residual stresses distribution is analysed, on the surface and into the depth of the material. Various revolutions and passes of the two teeth hemispheric mill on the workpiece are simulated. Thus the sensitivity of the residual stresses generation to the cutting conditions can be discussed. In order to validate the 3D model, a comparison of the cutting forces measured by EDF R and D to those given by numerical simulations is achieved.

  5. Stress-assisted discontinuous precipitation during creep of Ti3Al-Nb alloys

    International Nuclear Information System (INIS)

    Rowe, R.G.; Hall, E.L.

    1991-01-01

    Stress-assisted discontinuous precipitation was observed during creep of Ti-25Al-12.5Nb at. pct and associated with microstructures in which large primary creep strains were observed earlier. It was found that a large shift between the equilibrium beta(0) (B2) phase composition at the heat treatment temperature and disordered beta (bcc) phase at the creep temperature provided a driving force for discontinuous precipitation of disordered beta phase. Applied stress accelerated the growth of discontinuous beta phase at grain boundaries perpendicular to the principal stress axis, but did not produce a significant shift in composition. The difference between beta and ordered beta phase boundaries in the Ti-Al-Nb system at 650 C and 1040 C suggests that discontinuous precipitation or related dissolution should occur in all Ti3Al-Nb alloys. 11 refs

  6. Dynamic Failure Processes Under Confining Stress in AlON, a Transparent Polycrystalline Ceramic

    Science.gov (United States)

    2009-09-01

    homogeneous compressive stress state in the specimen, a 500 µm thick, soft-annealed AISI 4140 steel ‘cushion’ is sandwiched between the specimen and the...1. The AlON prismatic specimen (shown in green in the figure) is placed between two very hard steel “T-blocks” made from ~ HRC 55 hardened AISI ... 4140 steel alloy. The blocks were polished to obtain precise dimensions and a mirror surface finish. Compressive stress was generated by tightening

  7. Correlation between stresses and adhesion of oxide scales on Si and Ti containing NiCrAlY alloys

    International Nuclear Information System (INIS)

    Vosberg, V.; Quadakkers, W.J.; Schubert, F.; Nickel, H.

    1998-09-01

    The relation between mechanical stresses and the adhesion of alumina scales on Si- and Ti-containing NiCrAlY alloys has been investigated. Therefore the Si and Ti contents in model alloys with the base composition Ni-20Cr-10Al-Y, which were cast to achieve high purity, were varied from 0 to 2 m/0 . These solid samples were subjected to cyclic oxidation in the temperature range from 950 to 1100 C. Growth and spallation of the oxide scale were observed by gravimetry. The stresses, present at ambient temperature, were periodically determined by X-ray stress evaluation. Using these results a reasoning of the mechanisms for stress relief and damage of the scale was carried out. The addition of Silicon as well as of titanium has an evident influence on phase composition of Ni-20Cr-10Al-Y type alloys. Due to the variation of phase stability regions the thermal expansion is affected by these additions in the range from 950 to 1100 C. The expansion is enlarged by the addition of Si and lowered with increasing Ti content. (orig.)

  8. Diffusion-induced quadrupole relaxation of 27Al nuclei in dilute Al-Ti, Al-Cr, Al-Mn, and Al-Cu alloys at high temperatures

    International Nuclear Information System (INIS)

    Bottyan, L.; Beke, D.L.; Tompa, K.

    1983-01-01

    The temperature dependence of the laboratory frame spin-lattice relaxation time of 27 Al nuclei is measured in 5N Al and in dilute Al-Ti, Al-Cr, Al-Mn, and Al-Cu alloys at 5.7 and 9.7 MHz resonance frequencies. The relaxation in pure aluminium is found to be purely due to the conduction electrons. An excess T 1 -relaxation contribution is detected in all Al-3d alloys investigated above 670 K. The excess relaxation rate is proportional to the impurity content and the temperature dependence of the excess contribution is of Arrhenius-type with an activation energy of (1.3 +- 0.3) eV for all of the investigated alloys. The relaxation contribution is found to be quadrupolar in origin and is caused by the relative diffusional jumps of solute atoms and Al atoms relatively far from the impurity. (author)

  9. High temperature oxidation behavior of TiAl-based intermetallics

    International Nuclear Information System (INIS)

    Stroosnijder, M.F.; Sunderkoetter, J.D.; Haanappel, V.A.C.

    1996-01-01

    TiAl-based intermetallic compounds have attracted considerable interest as structural materials for high-temperature applications due to their low density and substantial mechanical strength at high temperatures. However, one major drawback hindering industrial application arises from the insufficient oxidation resistance at temperatures beyond 700 C. In the present contribution some general aspects of high temperature oxidation of TiAl-based intermetallics will be presented. This will be followed by a discussion of the influence of alloying elements, in particular niobium, and of the effect of nitrogen in the oxidizing environment on the high temperature oxidation behavior of such materials

  10. The response of high and low polyamine producing cell lines to aluminum and calcium stress

    Science.gov (United States)

    Sridev Mohapatra; Smita Cherry; Rakesh Minocha; Rajtilak Majumdar; Palaniswamy Thangavel; Stephanie Long; Subhash C. Minocha

    2010-01-01

    The diamine putrescine (Put) has been shown to accumulate in tree leaves in response to high Al and low Ca in the soil, leading to the suggestion that this response may provide a physiological advantage to leaf cells under conditions of Al stress. The increase in Put is reversed by Ca supplementation in the soil. Using two cell lines of poplar (Populus nigra...

  11. Minimization of Residual Stress in an Al-Cu Alloy Forged Plate by Different Heat Treatments

    Science.gov (United States)

    Dong, Ya-Bo; Shao, Wen-Zhu; Jiang, Jian-Tang; Zhang, Bao-You; Zhen, Liang

    2015-06-01

    In order to improve the balance of mechanical properties and residual stress, various quenching and aging treatments were applied to Al-Cu alloy forged plate. Residual stresses determined by the x-ray diffraction method and slitting method were compared. The surface residual stress measured by x-ray diffraction method was consistent with that measured by slitting method. The residual stress distribution of samples quenched in water with different temperatures (20, 60, 80, and 100 °C) was measured, and the results showed that the boiling water quenching results in a 91.4% reduction in residual stress magnitudes compared with cold water quenching (20 °C), but the tensile properties of samples quenched in boiling water were unacceptably low. Quenching in 80 °C water results in 75% reduction of residual stress, and the reduction of yield strength is 12.7%. The residual stress and yield strength level are considerable for the dimensional stability of aluminum alloy. Quenching samples into 30% polyalkylene glycol quenchants produced 52.2% reduction in the maximum compressive residual stress, and the reduction in yield strength is 19.7%. Moreover, the effects of uphill quenching and thermal-cold cycling on the residual stress were also investigated. Uphill quenching and thermal-cold cycling produced approximately 25-40% reduction in residual stress, while the effect on tensile properties is quite slight.

  12. Stress and High Blood Pressure: What's the Connection?

    Science.gov (United States)

    Stress and high blood pressure: What's the connection? Stress and long-term high blood pressure may not be linked, but taking steps to reduce your stress can improve your general health, including your blood ...

  13. ALS mutant SOD1 interacts with G3BP1 and affects stress granule dynamics.

    Science.gov (United States)

    Gal, Jozsef; Kuang, Lisha; Barnett, Kelly R; Zhu, Brian Z; Shissler, Susannah C; Korotkov, Konstantin V; Hayward, Lawrence J; Kasarskis, Edward J; Zhu, Haining

    2016-10-01

    Amyotrophic lateral sclerosis (ALS) is a fatal neurodegenerative disease. Mutations in Cu/Zn superoxide dismutase (SOD1) are responsible for approximately 20 % of the familial ALS cases. ALS-causing SOD1 mutants display a gain-of-toxicity phenotype, but the nature of this toxicity is still not fully understood. The Ras GTPase-activating protein-binding protein G3BP1 plays a critical role in stress granule dynamics. Alterations in the dynamics of stress granules have been reported in several other forms of ALS unrelated to SOD1. To our surprise, the mutant G93A SOD1 transgenic mice exhibited pathological cytoplasmic inclusions that co-localized with G3BP1-positive granules in spinal cord motor neurons. The co-localization was also observed in fibroblast cells derived from familial ALS patient carrying SOD1 mutation L144F. Mutant SOD1, unlike wild-type SOD1, interacted with G3BP1 in an RNA-independent manner. Moreover, the interaction is specific for G3BP1 since mutant SOD1 showed little interaction with four other RNA-binding proteins implicated in ALS. The RNA-binding RRM domain of G3BP1 and two particular phenylalanine residues (F380 and F382) are critical for this interaction. Mutant SOD1 delayed the formation of G3BP1- and TIA1-positive stress granules in response to hyperosmolar shock and arsenite treatment in N2A cells. In summary, the aberrant mutant SOD1-G3BP1 interaction affects stress granule dynamics, suggesting a potential link between pathogenic SOD1 mutations and RNA metabolism alterations in ALS.

  14. Effect of Trailing Intensive Cooling on Residual Stress and Welding Distortion of Friction Stir Welded 2060 Al-Li Alloy

    Science.gov (United States)

    Ji, Shude; Yang, Zhanpeng; Wen, Quan; Yue, Yumei; Zhang, Liguo

    2018-04-01

    Trailing intensive cooling with liquid nitrogen has successfully applied to friction stir welding of 2 mm thick 2060 Al-Li alloy. Welding temperature, plastic strain, residual stress and distortion of 2060 Al-Li alloy butt-joint are compared and discussed between conventional cooling and trailing intensive cooling using experimental and numerical simulation methods. The results reveal that trailing intensive cooling is beneficial to shrink high temperature area, reduce peak temperature and decrease plastic strain during friction stir welding process. In addition, the reduction degree of plastic strain outside weld is smaller than that inside weld. Welding distortion presents an anti-saddle shape. Compared with conventional cooling, the reductions of welding distortion and longitudinal residual stresses of welding joint under intense cooling reach 47.7 % and 23.8 %, respectively.

  15. Quantitative optical fluorescence microprobe measurements of stresses around indentations in Al2O3 and Al2O3/SiC nanocomposites: The influence of depth resolution and specimen translucency

    International Nuclear Information System (INIS)

    Guo Sheng; Todd, R.I.

    2011-01-01

    Residual stresses around 1 kg Vickers indentations in Al 2 O 3 and Al 2 O 3 /SiC nanocomposites were measured using high-resolution Cr 3+ fluorescence microscopy. Experiments and modelling showed that the use of non-confocal microscopes can lead to significant underestimation of the surface stress in Al 2 O 3 because of the sampling of subsurface regions where the stresses are lower. The nanocomposites were less sensitive to the depth resolution of the microscope because their strong absorption limited the depth from which fluorescent radiation was collected. The use of confocal microscope settings allowed accurate measurements to be made and the indentation stresses were found to be very similar in Al 2 O 3 and the Al 2 O 3 /SiC nanocomposites. The stresses measured were significantly different from the predictions of the Yoffe model for indentation stresses. This was because of indentation cracking, which is not accounted for in the model. Cracking was also considered to be important in determining the plastic zone size in ceramics, which is much smaller relative to the indentation size than in metals.

  16. Microstructure and texture development during high-strain torsion of NiAl

    Energy Technology Data Exchange (ETDEWEB)

    Kloeden, B.

    2006-07-01

    In this study polycrystalline NiAl has been subjected to torsion deformation. The deformation, microstructure and texture development subject to the shear strain are studied by different techniques (Electron Back-Scatter and High Energy Synchrotron Radiation). Beside the development of microstructure and texture with shear strain, the effect of an initial texture as well as the deformation temperature on the development of texture and microstructure constitute an important part of this study. Therefore, samples with three different initial textures were deformed in the temperature range T=700 K-1300 K. The shear stress-shear strain curves are characterized by a peak at low strains, which is followed by softening and a steady state at high strains. Grain refinement takes place for all samples and the average grain size decreases with temperature. For temperatures T>1000 K, discontinuous dynamic recrystallization occurs, by which new grains form by nucleation and subsequent growth. The texture is characterized by two components, {l_brace}100{r_brace}<100> (cube,C) and {l_brace}110{r_brace}<100> (Goss,G). Torsional creep of NiAl is characterized by a stress exponent, which depends on temperature and an activation energy, which is stress dependent. The Swift effect, due to which samples change their axial dimension during torsion without applied axial stress, is observed for NiAl. (orig.)

  17. Mining highly stressed areas, part 2.

    CSIR Research Space (South Africa)

    Johnson, R

    1995-12-01

    Full Text Available A questionnaire related to mining at great depth and in very high stress conditions has been completed with the assistance of mine rock mechanics personnel on over twenty mines in all mining districts, and covering all deep level mines...

  18. Prediction of residual stresses in electron beam welded Ti-6Al-4V plates

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Lianyong; Ge, Keke; Jing, Hongyang; Zhao, Lei; Lv, Xiaoqing [Tianjin Univ. (China); Han, Yongdian [Tianjin Univ. (China). Key Lab. of Advanced Joining Technology

    2017-05-01

    A thermo-metallurgical procedure based on the SYSWELD code was developed to predict welding temperature field, microstructure and residual stress in butt-welded Ti-6Al-4V plate taking into account phase transformation. The formation of martensite was confirmed by the CCT diagram and microstructure in the weld joint, which significantly affects the magnitude of residual stress. The hole drilling procedure was utilized to measure the values of residual stress at the top surface of the specimen, which are in well agreement with the numerical results. Both simulated and test results show that the magnitude and distribution of residual stress on the surface of the plate present a large gradient feature from the weld joint to the base metal. Moreover, the distribution law of residual stresses in the plate thickness was further analyzed for better understanding of its generation and evolution.

  19. τ-MnAl with high coercivity and saturation magnetization

    Directory of Open Access Journals (Sweden)

    J. Z. Wei

    2014-12-01

    Full Text Available In this paper, high purity τ-Mn54Al46 and Mn54−xAl46Cxalloys were successfully prepared using conventional arc-melting, melt-spinning, and heat treatment process. The magnetic and the structural properties were examined using x-ray diffraction (XRD, powder neutron diffraction and magnetic measurements. A room temperature saturation magnetization of 650.5 kAm-1, coercivity of 0.5 T, and a maximum energy product of (BHmax = 24.7 kJm-3 were achieved for the pure Mn54Al46 powders without carbon doping. The carbon substituted Mn54−xAl46Cx, however, reveals a lower Curie temperature but similar saturation magnetization as compared to the carbon-free sample. The electronic structure of MnAl shows that the Mn atom possesses a magnetic moment of 2.454 μB which results from strong hybridization between Mn-Al and Mn-Mn. We also investigated the volume and c/a ratio dependence of the magnetic moments of Mn and Al. The results indicate that an increase in the intra-atomic exchange splitting due to the cell volume expansion, leads to a large magnetic moment for the Mn atom. The Mn magnetic moment can reach a value of 2.9 μB at a volume expansion rate of ΔV/V ≈ 20%.

  20. Correlation between hardness and stress in Al-(Nb, Mo, Ta) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T., E-mail: car@irb.h [Rudjer Boskovic Institute, Division of Materials Science, Bijenicka cesta 54, 10000 Zagreb, P.O.B. 1016 (Croatia); Radic, N. [Rudjer Boskovic Institute, Division of Materials Science, Bijenicka cesta 54, 10000 Zagreb, P.O.B. 1016 (Croatia); Panjan, P.; Cekada, M. [Jozef Stefan Institute, Ljubljana (Slovenia); Tonejc, A. [Department of Physics, Bijenicka cesta 32, 10000 Zagreb, P.O.B. 331 (Croatia)

    2009-06-30

    The thin films of Al{sub x}Nb{sub 1-x} (95 {>=} x {>=} 20), Al{sub x}Mo{sub x} (90 {>=} x {>=} 20) and Al{sub x}Ta{sub 1-x} (95 {>=} x {>=} 20) were prepared by magnetron codeposition at room temperature. The average film thickness was from 325 to 400 nm, depending on the film composition. The structure of the as-deposited films was examined by the X-ray diffraction. The stress of the films was determined from the substrate deformation by the profilometer, and the microhardness (load 2 mN) was examined by the micro- and nano-hardness device. For the purpose of the examination of the hardness, the samples were deposited onto the sapphire wafers, while the examination of the film stress, was performed by using thin glass substrates. For all the Al-(Nb, Mo, Ta) alloy compositions, the microhardness is predominantly under the influence of the harder element, and monotonically decreases with the increase of the aluminum content. However, the microhardness of the amorphous AlTa films was higher than the bulk value of a harder element (Ta) in the alloy. A simple empirical linear relationship between the Vickers hardness, the bulk value hardness of the transition metal (harder element) and the elastic energy fraction of the identation deformation, was established. The elastic energy fraction in the microhardness is also linearly correlated with the stress in films.

  1. Investigations on thermal properties, stress and deformation of Al/SiC metal matrix composite based on finite element method

    Directory of Open Access Journals (Sweden)

    K. A. Ramesh Kumar

    2014-09-01

    Full Text Available AlSiC is a metal matrix composite which comprises of aluminium matrix with silicon carbide particles. It is characterized by high thermal conductivity (180-200 W/m K, and its thermal expansion are attuned to match other important materials that finds enormous demand in industrial sectors. Although its application is very common, the physics behind the Al-SiC formation, functionality and behaviors are intricate owing to the temperature gradient of hundreds of degrees, over the volume, occurring on a time scale of a few seconds, involving multiple phases. In this study, various physical, metallurgical and numerical aspects such as equation of continuum for thermal, stress and deformation using finite element (FE matrix formulation, temperature dependent material properties, are analyzed. Modelling and simulation studies of Al/SiC composites are a preliminary attempt to view this research work from computational point of view.

  2. Microstructural stability of heat-resistant high-pressure die-cast Mg-4Al-4Ce alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Zhang, Jinghuai; Li, Guoqiang; Feng, Yan; Su, Minliang; Wu, Ruizhi; Zhang, Zhongwu [Harbin Engineering Univ. (China). Key Laboratory of Superlight Material and Surface Technology; Jiao, Yufeng [Jiamusi Univ. (China). College of Materials Science and Engineering

    2017-05-15

    The thermal stability of Al-RE (rare earth) intermetallic phases with individual RE for heat-resistant high-pressure die-casting Mg-Al-RE alloys is investigated. The results of this study show that the main strengthening phase of Mg-4Al-4Ce alloy is Al{sub 11}Ce{sub 3}, whose content is about 5 wt.% according to quantitative X-ray diffraction phase analysis. The Al{sub 11}Ce{sub 3} phase appears to have high thermal stability at 200 C and 300 C, while phase morphology change with no phase structure transition could occur for Al{sub 11}Ce{sub 3} when the temperature reaches 400 C. Furthermore, besides the kinds of rare earths and temperature, stress is also an influencing factor in the microstructural stability of Mg-4Al-4Ce alloy.

  3. Design of high-temperature high-strength Al-Ti-V-Zr alloys

    International Nuclear Information System (INIS)

    Lee, H.M.

    1990-01-01

    This paper reports that it seems plausible to develop high-strength Al-base alloys useful up to 698K in view of the behavior of nickel base superalloys which resist degradation of mechanical properties to 75 pct of their absolute melting temperature. For high temperature Al alloys, the dispersed hardening phase must not undergo phase transformation to an undesirable phase during long time exposure at the temperature of interest. An additional factor to be considered is the stability of the hardening phase with respect to Ostwald ripening. This coarsening resistance is necessary so that the required strength level can be maintained after the long-time service at high temperatures. The equilibrium crystal structures of Al 3 Ti, Al 3 V and Al 3 Zr are tetragonal D0 22 , D0 22 and D0 23 , respectively. At the temperatures of interest, around 698K, vanadium and titanium are mutually substitutable in the form of Al 3 (Ti, V). Much of titanium and vanadium can be substituted for zirconium in the D0 23 - type Al 3 Zr compound, creating Al 3 (Ti, Zr) and Al 3 (V, Zr), respectively. In particular, it has been reported that fcc L1 2 -structured Al 3 M dispersoids form in the rapidly solidified Al-V-Zr and Al-Ti-Zr systems and both L1 2 and D0 23 -structured Al 3 M phases showed slow coarsening kinetics

  4. Neutron-diffraction measurement of residual stresses in Al-Cu cold-cut welding

    CERN Document Server

    Fiori, F

    2002-01-01

    Usually, when it is necessary to join different materials with a large difference in their melting points, welding should be avoided. To overcome this problem we designed and built a device to obtain cold-cut welding, which is able to strongly decrease oxidation problems of the surfaces to be welded. Thanks to this device it is possible to achieve good joining between different pairs of materials (Al-Ti, Cu-Al, Cu-Al alloys) without reaching the material melting point. The mechanical and microstructural characterisation of the joining and the validation of its quality were obtained using several experimental methods. In particular, in this work neutron-diffraction experiments for the evaluation of residual stresses in Cu-Al junctions are described, carried out at the G5.2 diffractometer of LLB, Saclay. Neutron-diffraction results are presented and related to other experimental tests such as microstructural characterisation (through optical and scanning electron microscopy) and mechanical characterisation (ten...

  5. The high-pressure phase of CePtAl

    International Nuclear Information System (INIS)

    Heymann, Gunter; Heying, Birgit; Rodewald, Ute C.; Janka, Oliver; Univ. Oldenburg

    2017-01-01

    The intermetallic aluminum compound HP-CePtAl was synthesized by arc melting of the elements with subsequent high-pressure/high-temperature treatment at 1620 K and 10.5 GPa in a multianvil press. The compound crystallizes in the hexagonal MgZn_2-type structure (P6_3/mmc) with lattice parameters of a=552.7(1) and c=898.8(2) pm refined from powder X-ray diffraction data. With the help of single crystal investigations (wR=0.0527, 187 F"2 values, 13 variables), the proposed structure type was confirmed and the mixed Pt/Al site occupations could be refined. Magnetic susceptibility measurements showed a disappearance of the complex magnetic ordering phenomena, which are observed in NP-CePtAl.

  6. The high-pressure phase of CePtAl

    Energy Technology Data Exchange (ETDEWEB)

    Heymann, Gunter [Univ. Innsbruck (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie; Heying, Birgit; Rodewald, Ute C. [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie; Janka, Oliver [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie; Univ. Oldenburg (Germany). Inst. fuer Chemie

    2017-03-01

    The intermetallic aluminum compound HP-CePtAl was synthesized by arc melting of the elements with subsequent high-pressure/high-temperature treatment at 1620 K and 10.5 GPa in a multianvil press. The compound crystallizes in the hexagonal MgZn{sub 2}-type structure (P6{sub 3}/mmc) with lattice parameters of a=552.7(1) and c=898.8(2) pm refined from powder X-ray diffraction data. With the help of single crystal investigations (wR=0.0527, 187 F{sup 2} values, 13 variables), the proposed structure type was confirmed and the mixed Pt/Al site occupations could be refined. Magnetic susceptibility measurements showed a disappearance of the complex magnetic ordering phenomena, which are observed in NP-CePtAl.

  7. Cutting Performance of Low Stress Thick TiAlN PVD Coatings during Machining of Compacted Graphite Cast Iron (CGI

    Directory of Open Access Journals (Sweden)

    Kenji Yamamoto

    2018-01-01

    Full Text Available A new family of physical vapor deposited (PVD coatings is presented in this paper. These coatings are deposited by a superfine cathode (SFC using the arc method. They combine a smooth surface, high hardness, and low residual stresses. This allows the production of PVD coatings as thick as 15 µm. In some applications, in particular for machining of such hard to cut material as compacted graphite iron (CGI, such coatings have shown better tool life compared to the conventional PVD coatings that have a lower thickness in the range of up to 5 μm. Finite element modeling of the temperature/stress profiles was done for the SFC coatings to present the temperature/stress profiles during cutting. Comprehensive characterization of the coatings was performed using XRD, TEM, SEM/EDS studies, nano-hardness, nano-impact measurements, and residual stress measurements. Application of the coating with this set of characteristics reduces the intensity of buildup edge formation during turning of CGI, leading to longer tool life. Optimization of the TiAlN-based coatings composition (Ti/Al ratio, architecture (mono vs. multilayer, and thickness were performed. Application of the optimized coating resulted in a 40–60% improvement in the cutting tool life under finishing turning of CGI.

  8. Oxidative stress and the high altitude environment

    Directory of Open Access Journals (Sweden)

    Jakub Krzeszowiak

    2013-03-01

    Full Text Available In the recent years there has been considerable interest in mountain sports, including mountaineering, owing to the general availability of climbing clothing and equipment as well trainings and professional literature. This raised a new question for the environmental and mountain medicine: Is mountaineering harmful to health? Potential hazards include the conditions existing in the alpine environment, i.e. lower atmospheric pressure leading to the development of hypobaric hypoxia, extreme physical effort, increased UV radiation, lack of access to fresh food, and mental stress. A reasonable measure of harmfulness of these factors is to determine the increase in the level of oxidative stress. Alpine environment can stimulate the antioxidant enzyme system but under specific circumstances it may exceed its capabilities with simultaneous consumption of low-molecular antioxidants resulting in increased generation of reactive oxygen species (ROS. This situation is referred to as oxidative stress. Rapid and uncontrolled proliferation of reactive oxygen species leads to a number of adverse changes, resulting in the above-average damage to the lipid structures of cell membranes (peroxidation, proteins (denaturation, and nucleic acids. Such situation within the human body cannot take place without resultant systemic consequences. This explains the malaise of people returning from high altitude and a marked decrease in their physical fitness. In addition, a theory is put forward that the increase in the level of oxidative stress is one of the factors responsible for the onset of acute mountain sickness (AMS. However, such statement requires further investigation because the currently available literature is inconclusive. This article presents the causes and effects of development of oxidative stress in the high mountains.

  9. Magnetism in UPtAl under high pressure

    Czech Academy of Sciences Publication Activity Database

    Honda, F.; Eto, T.; Oomi, G.; Sechovský, V.; Andreev, Alexander V.; Takeshita, N.; Môri, N.

    2002-01-01

    Roč. 52, č. 2 (2002), s. 263-266 ISSN 0011-4626. [Czech and Slovak Conference on Magnetism /11./. Košice, 20.08.2001-23.08.2001] Institutional research plan: CEZ:AV0Z1010914 Keywords : UPtAl * high pressure * electrical resistivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.311, year: 2002

  10. Microstructure degradation in high temperature fatigue of TiAl

    Czech Academy of Sciences Publication Activity Database

    Kruml, Tomáš; Obrtlík, Karel

    2014-01-01

    Roč. 65, AUG (2014), s. 28-32 ISSN 0142-1123 R&D Projects: GA ČR(CZ) GAP107/11/0704 Institutional support: RVO:68081723 Keywords : Low cycle fatigue * lamellar TiAl alloy * high temperature fatigue * dislocations Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.275, year: 2014

  11. Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

    NARCIS (Netherlands)

    Li, Lin; Liao, Zhaoliang; Gauquelin, Nicolas; Nguyen, Minh Duc; Hueting, Raymond J.E.; Gravesteijn, Dirk J.; Lobato, Ivan; Houwman, Evert P.; Lazar, Sorin; Verbeeck, Johan; Koster, Gertjan; Rijnders, Guus

    2018-01-01

    Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based

  12. Separation of stress-free AlN/SiC thin films from Si substrate

    International Nuclear Information System (INIS)

    Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

    2016-01-01

    We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

  13. High Caloric Diet for ALS Patients: High Fat, High Carbohydrate or High Protein

    OpenAIRE

    Sarvin Sanaie; Ata Mahmoodpoor

    2015-01-01

    ALS is a fatal motor neurodegenerative disease characterized by muscle atrophy and weakness, dysarthria, and dysphagia. The mean survival of ALS patients is three to five years, with 50% of those diagnosed dying within three years of onset (1). A multidisciplinary approach is crucial to set an appropriate plan for metabolic and nutritional support in ALS. Nutritional management incorporates a continuous assessment and implementation of dietary modifications throughout the duration of the dise...

  14. Excessively High Vapor Pressure of Al-based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Jae Im Jeong

    2015-10-01

    Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

  15. Average thermal stress in the Al+SiC composite due to its manufacturing process

    International Nuclear Information System (INIS)

    Miranda, Carlos A.J.; Libardi, Rosani M.P.; Marcelino, Sergio; Boari, Zoroastro M.

    2013-01-01

    The numerical analyses framework to obtain the average thermal stress in the Al+SiC Composite due to its manufacturing process is presented along with the obtained results. The mixing of Aluminum and SiC powders is done at elevated temperature and the usage is at room temperature. A thermal stress state arises in the composite due to the different thermal expansion coefficients of the materials. Due to the particles size and randomness in the SiC distribution, some sets of models were analyzed and a statistical procedure used to evaluate the average stress state in the composite. In each model the particles position, form and size are randomly generated considering a volumetric ratio (VR) between 20% and 25%, close to an actual composite. The obtained stress field is represented by a certain number of iso stress curves, each one weighted by the area it represents. Systematically it was investigated the influence of: (a) the material behavior: linear x non-linear; (b) the carbide particles form: circular x quadrilateral; (c) the number of iso stress curves considered in each analysis; and (e) the model size (the number of particles). Each of above analyzed condition produced conclusions to guide the next step. Considering a confidence level of 95%, the average thermal stress value in the studied composite (20% ≤ VR ≤ 25%) is 175 MPa with a standard deviation of 10 MPa. Depending on its usage, this value should be taken into account when evaluating the material strength. (author)

  16. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

    Science.gov (United States)

    Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

    2014-08-01

    Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

  17. Creep behavior and threshold stress of an extruded Al-6Mg-2Sc-1Zr alloy

    International Nuclear Information System (INIS)

    Deshmukh, S.P.; Mishra, R.S.; Kendig, K.L.

    2004-01-01

    Creep experiments were performed on extruded Al-6Mg-2Sc-1Zr (wt.%) alloy in a temperature range of 423-533 K. A threshold type creep behavior was measured and explained by observed dislocation-particle interactions. The experimental threshold stress values at various temperatures were compared with existing theoretical models. None of the available models could account for the decrease in threshold creep strength with increasing temperature

  18. Intermetallic Compound Growth and Stress Development in Al-Cu Diffusion Couple

    Science.gov (United States)

    Mishler, M.; Ouvarov-Bancalero, V.; Chae, Seung H.; Nguyen, Luu; Kim, Choong-Un

    2018-01-01

    This paper reports experimental observations evidencing that the intermetallic compound phase interfaced with Cu in the Al-Cu diffusion couple is most likely α2-Cu3Al phase, not γ-Cu9Al4 phase as previously assumed, and that its growth to a critical thickness may result in interface failure by stress-driven fracture. These conclusions are made based on an interdiffusion study of a diffusion couple made of a thick Cu plate coated with ˜ 2- μm-thick Al thin film. The interface microstructure and lattice parameter were characterized using scanning electron microscopy and x-ray diffraction analysis. Specimens aged at temperature between 623 K (350°C) and 723 K (450°C) for various hours produced consistent results supporting the main conclusions. It is found that disordered α2-Cu3Al phase grows in a similar manner to solid-state epitaxy, probably owing to its structural similarity to the Cu lattice. The increase in the interface strain that accompanies the α2-Cu3Al phase growth ultimately leads to interface fracture proceeding from crack initiation and growth along the interface. This mechanism provides the most consistent explanation for interface failures observed in other studies.

  19. Al based ultra-fine eutectic with high room temperature plasticity and elevated temperature strength

    Energy Technology Data Exchange (ETDEWEB)

    Tiwary, C.S., E-mail: cst311@gmail.com [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka (India); Kashyap, S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka (India); Kim, D.H. [Center for Non-Crystalline Materials, Department of Metallurgical Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Chattopadhyay, K. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka (India)

    2015-07-15

    Developments of aluminum alloys that can retain strength at and above 250 °C present a significant challenge. In this paper we report an ultrafine scale Al–Fe–Ni eutectic alloy with less than 3.5 at% transition metals that exhibits room temperature ultimate tensile strength of ~400 MPa with a tensile ductility of 6–8%. The yield stress under compression at 300 °C was found to be 150 MPa. We attribute it to the refinement of the microstructure that is achieved by suction casting in copper mold. The characterization using scanning and transmission electron microscopy (SEM and TEM) reveals an unique composite structure that contains the Al–Al{sub 3}Ni rod eutectic with spacing of ~90 nm enveloped by a lamellar eutectic of Al–Al{sub 9}FeNi (~140 nm). Observation of subsurface deformation under Vickers indentation using bonded interface technique reveals the presence of extensive shear banding during deformation that is responsible for the origin of ductility. The dislocation configuration in Al–Al{sub 3}Ni eutectic colony indicates accommodation of plasticity in α-Al with dislocation accumulation at the α-Al/Al{sub 3}Ni interface boundaries. In contrast the dislocation activities in the intermetallic lamellae are limited and contain set of planner dislocations across the plates. We present a detailed analysis of the fracture surface to rationalize the origin of the high strength and ductility in this class of potentially promising cast alloy.

  20. Foam behavior of solid glass spheres – Zn22Al2Cu composites under compression stresses

    International Nuclear Information System (INIS)

    Aragon-Lezama, J.A.; Garcia-Borquez, A.; Torres-Villaseñor, G.

    2015-01-01

    Solid glass spheres – Zn22Al2Cu composites, having different densities and microstructures, were elaborated and studied under compression. Their elaboration process involves alloy melting, spheres submersion into the liquid alloy and finally air cooling. The achieved composites with densities 2.6884, 2.7936 and 3.1219 g/cm 3 were studied in casting and thermally induced, fine-grain matrix microstructures. Test samples of the composites were compressed at a 10 −3 s −1 strain rate, and their microstructure characterized before and after compression by using optical and scanning electron microscopes. Although they exhibit different compression behavior depending on their density and microstructure, all of them show an elastic region at low strains, reach their maximum stress (σ max ) at hundreds of MPa before the stress fall or collapse up to a lowest yield point (LYP), followed by an important plastic deformation at nearly constant stress (σ p ): beyond this plateau, an extra deformation can be limitedly reached only by a significant stress increase. This behavior under compression stresses is similar to that reported for metal foams, being the composites with fine microstructure which nearest behave to metal foams under this pattern. Nevertheless, the relative values of the elastic modulus, and maximum and plateau stresses do not follow the Ashby equations by changing the relative density. Generally, the studied composites behave as foams under compression, except for their peculiar parameters values (σ max , LYP, and σ p )

  1. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    International Nuclear Information System (INIS)

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  2. Stress relaxation in dilute Al-0.02 at.% Mn alloy under electron irradiation

    International Nuclear Information System (INIS)

    Bystrov, L.N.; Ivanov, L.I.; Pletnev, M.N.; Reznitsky, M.E.

    1984-01-01

    Stress relaxation in cold-worked and annealed (573 K for 2 hours) specimens of the dilute alloy Al-0.02 at.% Mn has been studied experimentally over a range of initial stresses 5 to 80 MPa, both with and without irradiation by 2.1 MeV electrons. Thermoactivation analysis has revealed that relaxation proceeds in two stages with different activation parameters. The deformation rate in the first stage is controlled by diffusion of the impurity (Mn), and in the second stage by the self-diffusion of aluminum. A new method has been proposed for evaluating the internal stresses from experimental data. The effect of radiation-induced diffusion on the kinetics of relaxation is discussed. (author)

  3. High-pressure coolant effect on the surface integrity of machining titanium alloy Ti-6Al-4V: a review

    Science.gov (United States)

    Liu, Wentao; Liu, Zhanqiang

    2018-03-01

    Machinability improvement of titanium alloy Ti-6Al-4V is a challenging work in academic and industrial applications owing to its low thermal conductivity, low elasticity modulus and high chemical affinity at high temperatures. Surface integrity of titanium alloys Ti-6Al-4V is prominent in estimating the quality of machined components. The surface topography (surface defects and surface roughness) and the residual stress induced by machining Ti-6Al-4V occupy pivotal roles for the sustainability of Ti-6Al-4V components. High-pressure coolant (HPC) is a potential choice in meeting the requirements for the manufacture and application of Ti-6Al-4V. This paper reviews the progress towards the improvements of Ti-6Al4V surface integrity under HPC. Various researches of surface integrity characteristics have been reported. In particularly, surface roughness, surface defects, residual stress as well as work hardening are investigated in order to evaluate the machined surface qualities. Several coolant parameters (including coolant type, coolant pressure and the injection position) deserve investigating to provide the guidance for a satisfied machined surface. The review also provides a clear roadmap for applications of HPC in machining Ti-6Al4V. Experimental studies and analysis are reviewed to better understand the surface integrity under HPC machining process. A distinct discussion has been presented regarding the limitations and highlights of the prospective for machining Ti-6Al4V under HPC.

  4. Application of the Raman technique to measure stress states in individual Si particles in a cast Al-Si alloy

    International Nuclear Information System (INIS)

    Harris, Stephen J.; O'Neill, Ann; Boileau, James; Donlon, William; Su, Xuming; Majumdar, B.S.

    2007-01-01

    While Raman spectroscopy is often used to measure stresses, the analyses are almost always limited to cases with simple stress states (uniaxial, equibiaxial). Recently we provided an experimental methodology to determine the full state of stress in Si wafers. Here we extend that methodology to interrogate stress states in Si particles embedded in an Al-Si alloy. Such determinations will ultimately be valuable for predicting ductility of cast Al, since a primary source of damage is cracking of eutectic Si particles. We combine electron back-scattered diffraction with the frequency shift, polarization and intensity of the Raman light to determine stress states. Stress states are measured both in the as-received residually stressed state and under in situ uniaxial loading. Comparison with finite element calculations shows good agreement. As an application of the technique, we show the determination of strength of an individual Si particle and compare the stress evolution with various models

  5. Residual stress prediction in a powder bed fusion manufactured Ti6Al4V hip stem

    Science.gov (United States)

    Barrett, Richard A.; Etienne, Titouan; Duddy, Cormac; Harrison, Noel M.

    2017-10-01

    Powder bed fusion (PBF) is a category of additive manufacturing (AM) that is particularly suitable for the production of 3D metallic components. In PBF, only material in the current build layer is at the required melt temperature, with the previously melted and solidified layers reducing in temperature, thus generating a significant thermal gradient within the metallic component, particularly for laser based PBF components. The internal thermal stresses are subsequently relieved in a post-processing heat-treatment step. Failure to adequately remove these stresses can result in cracking and component failure. A prototype hip stem was manufactured from Ti6Al4V via laser PBF but was found to have fractured during over-seas shipping. This study examines the evolution of thermal stresses during the laser PBF manufacturing and heat treatment processes of the hip stem in a 2D finite element analysis (FEA) and compares it to an electron beam PBF process. A custom written script for the automatic conversion of a gross geometry finite element model into a thin layer- by-layer finite element model was developed. The build process, heat treatment (for laser PBF) and the subsequent cooling were simulated at the component level. The results demonstrate the effectiveness of the heat treatment in reducing PBF induced thermal stresses, and the concentration of stresses in the region that fractured.

  6. Investigations of linear contraction and shrinkage stresses development in hypereutectic al-si binary alloys

    Directory of Open Access Journals (Sweden)

    J. Mutwil

    2009-07-01

    Full Text Available Shrinkage phenomena during solidification and cooling of hypereutectic aluminium-silicon alloys (AlSi18, AlSi21 have been examined. A vertical shrinkage rod casting with circular cross-section (constant or fixed: tapered has been used as a test sample. Two type of experiments have been conducted: 1 on development of the test sample linear dimension changes (linear expansion/contraction, 2 on development of shrinkage stresses in the test sample. By the linear contraction experiments the linear dimension changes of the test sample and the metal test mould as well a temperature in six points of the test sample have been registered. By shrinkage stresses examination a shrinkage tension force and linear dimension changes of the test sample as well a temperature in three points of the test sample have been registered. Registered time dependences of the test bar and the test mould linear dimension changes have shown, that so-called pre-shrinkage extension has been mainly by mould thermal extension caused. The investigation results have shown that both: the linear contraction as well as the shrinkage stresses development are evident dependent on metal temperature in a warmest region the sample (thermal centre.

  7. Marinesco-Sjögren syndrome protein SIL1 regulates motor neuron subtype-selective ER stress in ALS

    NARCIS (Netherlands)

    Filézac de L'Etang, Audrey; Maharjan, Niran; Cordeiro Braña, Marisa; Ruegsegger, Céline; Rehmann, Ruth; Goswami, Anand; Roos, Andreas; Troost, Dirk; Schneider, Bernard L.; Weis, Joachim; Saxena, Smita

    2015-01-01

    Mechanisms underlying motor neuron subtype-selective endoplasmic reticulum (ER) stress and associated axonal pathology in amyotrophic lateral sclerosis (ALS) remain unclear. Here we show that the molecular environment of the ER between motor neuron subtypes is distinct, with characteristic

  8. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  9. Influence of microstructure and mean stress on the fatique behaviour of Ti-6Al-4V

    International Nuclear Information System (INIS)

    Steele, R.K.; McEvily, A.J.

    1977-01-01

    In previous fatigue studies of Ti-6Al-4V bar stock and forgings a number of findings of interest were encountered. These findings include the sub-surface initiation of fatigue cracks, a strong Bauschinger effect, cyclic softening, an influence of microstructural size on resistance to fatigue (particularly at R=0), and a dependency of cyclic-stress strain behavior on loading path. The present paper extends the work of the earlier investigations to cover a wider range of microstructures as well as cyclic loading conditions. The basic materials are forging and bar stock of the Ti-6Al-4V alloy with microstructural variations being achieved by different heat treating procedures. (Auth.)

  10. Neutron-diffraction measurement of residual stresses in Al-Cu cold-cut welding

    Science.gov (United States)

    Fiori, F.; Marcantoni, M.

    Usually, when it is necessary to join different materials with a large difference in their melting points, welding should be avoided. To overcome this problem we designed and built a device to obtain cold-cut welding, which is able to strongly decrease oxidation problems of the surfaces to be welded. Thanks to this device it is possible to achieve good joining between different pairs of materials (Al-Ti, Cu-Al, Cu-Al alloys) without reaching the material melting point. The mechanical and microstructural characterisation of the joining and the validation of its quality were obtained using several experimental methods. In particular, in this work neutron-diffraction experiments for the evaluation of residual stresses in Cu-Al junctions are described, carried out at the G5.2 diffractometer of LLB, Saclay. Neutron-diffraction results are presented and related to other experimental tests such as microstructural characterisation (through optical and scanning electron microscopy) and mechanical characterisation (tensile-strength tests) of the welded interface.

  11. Foam behavior of solid glass spheres – Zn22Al2Cu composites under compression stresses

    Energy Technology Data Exchange (ETDEWEB)

    Aragon-Lezama, J.A., E-mail: alja@correo.azc.uam.mx [Departamento de Materiales, Universidad Autónoma Metropolitana-A, Avenida San Pablo 180, Colonia Reynosa Tamaulipas, 02200 México, D.F., México (Mexico); Garcia-Borquez, A., E-mail: a.garciaborquez@yahoo.com.mx [Ciencia de Materiales, ESFM – Instituto Politécnico Nacional, Edif. 9, Unid. Prof. A. Lopez Mateos, Colonia Lindavista, 07738 México, D.F., México (Mexico); Torres-Villaseñor, G., E-mail: gtorres@unam.mx [Departamento de Metálicos y Cerámicos, Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apdo., P 70-360, México, D.F., México (Mexico)

    2015-06-25

    Solid glass spheres – Zn22Al2Cu composites, having different densities and microstructures, were elaborated and studied under compression. Their elaboration process involves alloy melting, spheres submersion into the liquid alloy and finally air cooling. The achieved composites with densities 2.6884, 2.7936 and 3.1219 g/cm{sup 3} were studied in casting and thermally induced, fine-grain matrix microstructures. Test samples of the composites were compressed at a 10{sup −3} s{sup −1} strain rate, and their microstructure characterized before and after compression by using optical and scanning electron microscopes. Although they exhibit different compression behavior depending on their density and microstructure, all of them show an elastic region at low strains, reach their maximum stress (σ{sub max}) at hundreds of MPa before the stress fall or collapse up to a lowest yield point (LYP), followed by an important plastic deformation at nearly constant stress (σ{sub p}): beyond this plateau, an extra deformation can be limitedly reached only by a significant stress increase. This behavior under compression stresses is similar to that reported for metal foams, being the composites with fine microstructure which nearest behave to metal foams under this pattern. Nevertheless, the relative values of the elastic modulus, and maximum and plateau stresses do not follow the Ashby equations by changing the relative density. Generally, the studied composites behave as foams under compression, except for their peculiar parameters values (σ{sub max}, LYP, and σ{sub p})

  12. ALS Patient Stem Cells for Unveiling Disease Signatures of Motoneuron Susceptibility: Perspectives on the Deadly Mitochondria, ER Stress and Calcium Triad

    Science.gov (United States)

    Kaus, Anjoscha; Sareen, Dhruv

    2015-01-01

    Amyotrophic lateral sclerosis (ALS) is a largely sporadic progressive neurodegenerative disease affecting upper and lower motoneurons (MNs) whose specific etiology is incompletely understood. Mutations in superoxide dismutase-1 (SOD1), TAR DNA-binding protein 43 (TARDBP/TDP-43) and C9orf72, have been identified in subsets of familial and sporadic patients. Key associated molecular and neuropathological features include ubiquitinated TDP-43 inclusions, stress granules, aggregated dipeptide proteins from mutant C9orf72 transcripts, altered mitochondrial ultrastructure, dysregulated calcium homeostasis, oxidative and endoplasmic reticulum (ER) stress, and an unfolded protein response (UPR). Such impairments have been documented in ALS animal models; however, whether these mechanisms are initiating factors or later consequential events leading to MN vulnerability in ALS patients is debatable. Human induced pluripotent stem cells (iPSCs) are a valuable tool that could resolve this “chicken or egg” causality dilemma. Relevant systems for probing pathophysiologically affected cells from large numbers of ALS patients and discovering phenotypic disease signatures of early MN susceptibility are described. Performing unbiased ‘OMICS and high-throughput screening in relevant neural cells from a cohort of ALS patient iPSCs, and rescuing mitochondrial and ER stress impairments, can identify targeted therapeutics for increasing MN longevity in ALS. PMID:26635528

  13. Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    M. Agrawal

    2017-01-01

    Full Text Available The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V∼1and GaN is grown under N-rich growth regime (III/V<1. The III/V ratio determines the growth mode of the layers that influences the lattice mismatch at the GaN/AlN interface. The lattice mismatch induced interfacial stress at the GaN/AlN interface relaxes by the formation of buried cracks in the structure. Additionally, the stress also relaxes by misorienting the AlN resulting in two misorientations with different tilts. Crack-free layers were obtained when AlN and GaN were grown in the N-rich growth regime (III/V<1 and metal rich growth regime (III/V≥1, respectively. AlGaN/GaN high electron mobility transistor (HEMT heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm−2.

  14. Shot-Peening Effect on High Cycling Fatigue of Al-Cu Alloy

    Science.gov (United States)

    Fouad, Yasser; Metwally, Mostafa El

    2013-12-01

    The present work was aimed at evaluating the effects of shot-peening on the high cycle fatigue performance of the age-hardening aircraft alloy Al 2024 at different almen intensities. Shot-peening to full coverage (100 pct) was performed using spherically conditioned cut wire (SCCW 14) with an average shot size of 0.36 mm and at almen intensities of 0.1, 0.2, and 0.3 mmA. After applying the various mechanical surface treatments, the changes in the surface and near-surface layer properties such as microhardness, residual stress-depth profiles, and surface roughness were determined. The microhardness, surface roughness, and the residual stresses increased proportionally with the almen intensity. Electropolitically polished conditions were used as reference in the mechanically surface treated specimens. A significant improvement was seen in the fatigue performance of the 0.1 mmA.

  15. Ultrasonic test of highly stressed gear shafts

    Energy Technology Data Exchange (ETDEWEB)

    Schreiner, T. [Siemens AG, Power Generation, KWU, Muelheim (Germany); Heinrich, W. [Siemens AG, Power Generation, KWU, Berlin (Germany); Achtzehn, J. [Siemens AG, Power Generation, ICVW, Erlangen (Germany); Hensley, H. [Siemens Power Generation (Germany)

    1998-12-31

    In the power plant industry, gears are used for increasingly higher turbine capacities. Efficiency enhancements, particularly for the combined gas and steam turbine process, lead to an increase in stresses, even for high-performance gears. Consequently, the requirements for non-destructive material testing are on the increase as well. At Siemens KWU, high-performance gears are used so far only for gas turbines with lower rating (65 MW) to adapt the gas turbine speed (5413 rpm) to the generator speed (3000 rpm/ 50 Hz or 3600 rpm/60 Hz). The gear train consists of a forged and case-hardened wheel shaft and pinion shaft made of material 17 CrNiMo 6, where the wheel shaft can be either a solid or a hollow shaft. Dimensions are typically 2.3 m length and 1 m diameter. As a rule, pinion shafts are solid. The gear design, calling for an additional torsion shaft turning inside the hollow wheel shaft, can absorb more torsional load surges and is more tolerant of deviations during gear train alignment. This design requires two additional forgings (torsion shaft and hub) and an additional bearing 2 refs.

  16. Ultrasonic test of highly stressed gear shafts

    Energy Technology Data Exchange (ETDEWEB)

    Schreiner, T [Siemens AG, Power Generation, KWU, Muelheim (Germany); Heinrich, W [Siemens AG, Power Generation, KWU, Berlin (Germany); Achtzehn, J [Siemens AG, Power Generation, ICVW, Erlangen (Germany); Hensley, H [Siemens Power Generation (Germany)

    1999-12-31

    In the power plant industry, gears are used for increasingly higher turbine capacities. Efficiency enhancements, particularly for the combined gas and steam turbine process, lead to an increase in stresses, even for high-performance gears. Consequently, the requirements for non-destructive material testing are on the increase as well. At Siemens KWU, high-performance gears are used so far only for gas turbines with lower rating (65 MW) to adapt the gas turbine speed (5413 rpm) to the generator speed (3000 rpm/ 50 Hz or 3600 rpm/60 Hz). The gear train consists of a forged and case-hardened wheel shaft and pinion shaft made of material 17 CrNiMo 6, where the wheel shaft can be either a solid or a hollow shaft. Dimensions are typically 2.3 m length and 1 m diameter. As a rule, pinion shafts are solid. The gear design, calling for an additional torsion shaft turning inside the hollow wheel shaft, can absorb more torsional load surges and is more tolerant of deviations during gear train alignment. This design requires two additional forgings (torsion shaft and hub) and an additional bearing 2 refs.

  17. Evaluation of Residual Stress Distribution and Relaxation on In Situ TiB2/7050 Al Composites

    Directory of Open Access Journals (Sweden)

    Kunyang Lin

    2018-04-01

    Full Text Available Interior residual stresses induced by quenching may cause distortion during subsequent machining processes. Hence, various strategies have been employed to relieve the interior residual stress, such as stretching, post treatment, and other techniques. In this study, the stress distribution inside TiB2/7050 Al composite extrusions was investigated and the effects of different methods on relieving the quenching-induced stress were compared. Firstly, three TiB2/7050 Al composite extrusions were treated by stretching, stretching and heat treatment, and stretching and cold treatment processes, respectively. Then, the multiple-cut contour method was employed to assess the residual stresses in the three workpieces. Experimental results indicate that the interior stress of TiB2/7050 Al composite extrusions after stretching ranges from −89 MPa to +55 MPa, which is larger than that in 7050 aluminum alloy, which ranges from −25 Pa to +25 MPa. The heat treatment performs better than the cold treatment to reduce the post-stretching residual stress, with a reduction of 23.2–46.4% compared to 11.3–40.8%, respectively. From the stress map, it is found that the stress distribution after the heat treatment is more uniform compared with that after the cold treatment.

  18. Influence of Temperature on Mechanical Behavior During Static Restore Processes of Al-Zn-Mg-Cu High Strength Aluminum Alloy

    Directory of Open Access Journals (Sweden)

    ZHANG Kun

    2017-06-01

    Full Text Available Flow stress behaviors of as-cast Al-Zn-Mg-Cu high strength aluminum alloy during static restore processes were investigated by: Isothermal double-pass compression tests at temperatures of 300-400℃, strain rates of 0.01-1 s-1, strains of 33% +20% with the holding times of 0~900 s after the first pass compression. The results indicate that the deformation temperature has a dramatical effect on mechanical behaviors during static restore processes of the alloy. (1 At 300 ℃ and 330 ℃ lower temperatures, the recovery during the deformation is slow, and deformation energy stored in matrix is higher, flow stresses at the second pass deformation decreased during the recovery and recrystallization, and the stress softening phenomena is observed. Stress softening is increased with the increasing holding time; Precipitation during the holding time inhibites the stress softening. (2 At 360 ℃ and 400 ℃ higher temperatures, the recovery during deformation is rapid, and deformation energy stored in matrix is lower. Solid solubility is higher after holding, so that flow stress at the second pass deformation is increased, stress hardening phenomena is observed. Stress hardening decreased with the increasing holding time duo to the recovery and recrystallization during holding period at 360 ℃; Precipitation during holding also inhibited the stress softening. However, Stress hardening remains constant with the increasing holding time duo to the reasanenal there are no recovery and recrystallization during holding period at 400 ℃.

  19. Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

    2017-06-15

    Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

  20. Measurement of residual stress in textured Al alloy by neutron diffraction method

    International Nuclear Information System (INIS)

    Okido, S.; Hayashi, M.; Tanaka, K.; Akiniwa, Y.; Minakawa, N.; Morii, Y.

    1999-01-01

    Residual stress generated in a shrunken aluminum alloy specimen, which was prepared for the round robin test conducted by VAMAS (Versailles Project on Advanced Materials and Standards) TWA-20 organized for the purpose of standardizing residual stress measurement methods, was evaluated by a neutron diffraction method. The main purpose of the round robin test was to assess the reproducibility of data obtained with the measurement facilities of the participants. The general standard of the Residual Stress Analyzer (RESA) constructed in the Japan Atomic Energy Research Institute was verified from the measured residual strains, which were equivalent to the values calculated by FEM and values measured by the research facilities in North America. Residual stress was calculated from residual strain in three perpendicular directions. The diffraction intensities were dependent on measurement directions since the prepared specimen possessed texture. Diffraction profiles in directions having a weak diffraction intensity caused an inaccurate evaluation of the residual stress. To solve this problem, a new method for evaluating residual stress with respect to diffraction plane dependency of the elastic constant was applied. The diffraction plane giving the highest intensity among 110, 200, and 220 diffraction was used to evaluate the residual strain in each of three directions. The residual strain obtained on the used diffraction plane was converted to the equivalent strain for the defined diffraction plane using the ratio of elastic constants of these two planes. The developed evaluation method achieved highly accurate measurement and remarkable efficiency in the measurement process. (author)

  1. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    International Nuclear Information System (INIS)

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Multilinear stress-strain and failure calibrations for Ti-6Al-4V.

    Energy Technology Data Exchange (ETDEWEB)

    Corona, Edmundo [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-01

    This memo concerns calibration of an elastic-plastic J2 material model for Ti-6Al-4V (grade 5) alloy based on tensile uniaxial stress-strain data obtained in the laboratory. In addition, tension tests on notched specimens provided data to calibrate two ductile failure models: Johnson-Cook and Wellman's tearing parameter. The tests were conducted by Kim Haulen- beek and Dave Johnson (1528) in the Structural Mechanics Laboratory (SML) during late March and early April, 2017. The SML EWP number was 4162. The stock material was a TIMETALR® 6-4 Titanium billet with 9 in. by 9 in. square section and length of 137 in. The product description indicates that it was a forging delivered in annealed condition (2 hours @ 1300oF, AC at the mill). The tensile mechanical properties reported in the material certi cation are given in Table 1, where σo represents the 0.2% strain offset yield stress, σu the ultimate stress, εf the elongation at failure and R.A. the reduction in area.

  3. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

    International Nuclear Information System (INIS)

    Sun Wei-Wei; Zheng Xue-Feng; Fan Shuang; Wang Chong; Du Ming; Zhang Kai; Mao Wei; Zhang Jin-Cheng; Hao Yue; Chen Wei-Wei; Cao Yan-Rong; Ma Xiao-Hua

    2015-01-01

    The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons. (paper)

  4. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Lin Zhao-Jun; Zhang Yu; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Chen Hong; Wang Zhan-Guo

    2011-01-01

    Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N 2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Effects of fretting fatigue on the residual stress of shot peened Ti-6Al-4V samples

    International Nuclear Information System (INIS)

    Martinez, S.A.; Sathish, S.; Blodgett, M.P.; Mall, S.; Namjoshi, S.

    2005-01-01

    X-ray diffraction residual stress measurement has been utilized as nondestructive tool for the characterization of fretting fatigue damage in shot peened samples of Ti-6Al-4V. Prior to fretting fatigue damage, compressive residual stresses were found to be uniform over the entire face of the sample and independent of the measurement direction. After fretting fatigue, inside and in the vicinity of the fretting damage zone large relaxation of compressive residual stress was observed. An anisotropic residual stress distribution has been observed in the fretting fatigue damaged region. Residual stress measurements in interrupted fretting fatigue experiments showed that the relaxation of residual stress increases as the number of fretting fatigue cycles increase. The results are discussed in the light of their importance in establishing X-ray diffraction residual stress measurement technique as a nondestructive tool to characterize fretting fatigue damage

  6. Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

    2017-12-01

    Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

  7. High temperature properties of the Cr-Nb-Al-N coatings with increasing Al contents

    OpenAIRE

    Li, W. Z.; Polcar, T.; Evaristo, M.; Cavaleiro, A.

    2013-01-01

    Cr-Nb-Al-N coatings with Al content from 0 to 12 at.% were deposited by d.c. reactive magnetron sputtering. The coatings were annealed in protective atmosphere at 800 and 900 °C for 1 h and exposed to air at 800, 900 and 1200 °C for different times. The chemical composition, structure, microstructure, hardness and adhesive/cohesive strength of the coatings, in as-deposited and annealed conditions, were investigated and the oxidation resistance was evaluated. As expected, the Al content increa...

  8. High strain rate tensile behavior of Al-4.8Cu-1.2Mg alloy

    International Nuclear Information System (INIS)

    Bobbili, Ravindranadh; Paman, Ashish; Madhu, V.

    2016-01-01

    The purpose of the current study is to perform quasi static and high strain rate tensile tests on Al-4.8Cu-1.2Mg alloy under different strain rates ranging from 0.01–3500/s and also at temperatures of 25,100, 200 and 300 °C. The combined effect of strain rate, temperature and stress triaxiality on the material behavior is studied by testing both smooth and notched specimens. Johnson–Cook (J–C) constitutive and fracture models are established based on high strain rate tensile data obtained from Split hopkinson tension bar (SHTB) and quasi-static tests. By modifying the strain hardening and strain rate hardening terms in the Johnson–Cook (J–C) constitutive model, a new J–C constitutive model of Al-4.8Cu-1.2Mg alloy was obtained. The improved Johnson–Cook constitutive model matched the experiment results very well. With the Johnson–Cook constitutive and fracture models, numerical simulations of tensile tests at different conditions for Al-4.8Cu-1.2Mg alloy were conducted. Numerical simulations are performed using a non-linear explicit finite element code autodyn. Good agreement is obtained between the numerical simulation results and the experiment results. The fracture surfaces of specimens tested under various strain rates and temperatures were studied under scanning electron microscopy (SEM).

  9. Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Yang Ling; Zhou Xiao-Wei; Ma Xiao-Hua; Lv Ling; Zhang Jin-Cheng; Hao Yue; Cao Yan-Rong

    2017-01-01

    The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. (paper)

  10. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Science.gov (United States)

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  11. Mechanical twinning and texture evolution in severely deformed Ti-6Al-4V at high temperatures

    International Nuclear Information System (INIS)

    Yapici, Guney Guven; Karaman, Ibrahim; Luo Zhiping

    2006-01-01

    We have investigated the deformation behavior and texture evolution of two-phase Ti-6Al-4V subjected to severe plastic deformation using equal channel angular extrusion (ECAE) at a high temperature (∼0.55T m ). Significant deformation twinning activity was observed after one and two ECAE passes in a 90 deg, die at 800 deg. C. Twinning activity at such a high temperature is a first-time observation in this material and is attributed to the high strain and stress levels imposed during ECAE. High stress levels and the stress state can affect the separation of twinning partials considerably. Resolved shear stress magnitudes on twin partials were found to be high during the ECAE process that helps the nucleation of mechanical twinning. The twinning mode was identified as the {101-bar 1} type using electron diffraction patterns which is one of the twinning modes observed in Ti at temperatures above 350 deg. C. Although only one twinning variant was mainly evident after one pass, multiple twin variants of the same mode were observed after the second pass with a significant increase in twin volume fraction. ECAE processing aligned the basal planes of the hexagonal close-packed α phase, initially having a random texture, with the ECAE shear plane. Texture evolution during ECAE was successfully predicted using a viscoplastic self-consistent crystal plasticity framework capturing the effect of the observed twinning mode on texture. Mechanical twins formed during ECAE and grain refinement led to a noteworthy improvement in flow stresses under tension and compression at room temperature. A strong directional anisotropy in yield strengths was also evident which cannot be explained only by crystallographic texture. It was speculated that the asymmetry of critical resolved shear stresses of deformation modes and the processing-induced deformation structure should play a role. With the supporting evidence from our previous works on the severe plastic deformation of other

  12. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    Science.gov (United States)

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  13. In situ and postradiation analysis of mechanical stress in Al2O3:Cr induced by swift heavy-ion irradiation

    International Nuclear Information System (INIS)

    Skuratov, V.A.; Bujnarowski, G.; Kovalev, Yu.S.; O'Connell, J.; Havanscak, K.

    2010-01-01

    Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al 2 O 3 and Al 2 O 3 :Cr single crystals induced by (1-3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated with beginning of individual ion track regions overlapping. The residual stress profiles through the ion irradiated layers were deduced from depth-resolved photostimulated spectra using laser confocal scanning microscopy set-up. It was determined that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

  14. In situ and postradiation analysis of mechanical stress in Al{sub 2}O{sub 3}:Cr induced by swift heavy-ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.r [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); Bujnarowski, G. [Institute of Physics, Opole University, 45-052 Opole (Poland); Kovalev, Yu.S. [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); O' Connell, J. [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Havanscak, K. [Eoetvoes University, Pazmany P. setany 1/A, H-1117 Budapest (Hungary)

    2010-10-01

    Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}:Cr single crystals induced by (1-3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated with beginning of individual ion track regions overlapping. The residual stress profiles through the ion irradiated layers were deduced from depth-resolved photostimulated spectra using laser confocal scanning microscopy set-up. It was determined that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

  15. High Glucose Inhibits Neural Stem Cell Differentiation Through Oxidative Stress and Endoplasmic Reticulum Stress.

    Science.gov (United States)

    Chen, Xi; Shen, Wei-Bin; Yang, Penghua; Dong, Daoyin; Sun, Winny; Yang, Peixin

    2018-06-01

    Maternal diabetes induces neural tube defects by suppressing neurogenesis in the developing neuroepithelium. Our recent study further revealed that high glucose inhibited embryonic stem cell differentiation into neural lineage cells. However, the mechanism whereby high glucose suppresses neural differentiation is unclear. To investigate whether high glucose-induced oxidative stress and endoplasmic reticulum (ER) stress lead to the inhibition of neural differentiation, the effect of high glucose on neural stem cell (the C17.2 cell line) differentiation was examined. Neural stem cells were cultured in normal glucose (5 mM) or high glucose (25 mM) differentiation medium for 3, 5, and 7 days. High glucose suppressed neural stem cell differentiation by significantly decreasing the expression of the neuron marker Tuj1 and the glial cell marker GFAP and the numbers of Tuj1 + and GFAP + cells. The antioxidant enzyme superoxide dismutase mimetic Tempol reversed high glucose-decreased Tuj1 and GFAP expression and restored the numbers of neurons and glial cells differentiated from neural stem cells. Hydrogen peroxide treatment imitated the inhibitory effect of high glucose on neural stem cell differentiation. Both high glucose and hydrogen peroxide triggered ER stress, whereas Tempol blocked high glucose-induced ER stress. The ER stress inhibitor, 4-phenylbutyrate, abolished the inhibition of high glucose or hydrogen peroxide on neural stem cell differentiation. Thus, oxidative stress and its resultant ER stress mediate the inhibitory effect of high glucose on neural stem cell differentiation.

  16. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  17. Elevated level of serum triglyceride among high risk stress bank ...

    African Journals Online (AJOL)

    The objective of this study was to estimate lipid profile among high risk stress bank employees' correlated with heart disorders in Riyadh, Saudi Arabia. A total of 129 patients with high risk stress employees were involved in this study, which were divided into 69 males and 60 females between the age of 25 to 55 years.

  18. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  19. High productivity mould robotic milling in Al-5083

    Science.gov (United States)

    Urresti, Iker; Arrazola, Pedro Jose; Ørskov, Klaus Bonde; Pelegay, Jose Angel

    2018-05-01

    Industrial serial robots were usually limited to welding, handling or spray painting operations until very recent years. However, some industries have already realized about their important capabilities in terms of flexibility, working space, adaptability and cost. Hence, currently they are seriously being considered to carry out certain metal machining tasks. Therefore, robot based machining is presented as a cost-saving and flexible manufacturing alternative compared to conventional CNC machines especially for roughing or even pre-roughing of large parts. Nevertheless, there are still some drawbacks usually referred as low rigidity, accuracy and repeatability. Thus, the process productivity is usually sacrificed getting low Material Removal Rates (MRR), and consequently not being competitive. Nevertheless, in this paper different techniques to obtain increased productivity are presented, though an appropriate selection of cutting strategies and parameters that are essential for it. During this research some rough milling tests in Al-5083 are presented where High Feed Milling (HFM) is implemented as productive cutting strategy and the experimental modal analysis named Tap-testing is used for the suitable choice of cutting conditions. Competitive productivity rates are experienced while process stability is checked through the cutting forces measurements in order to prove the effectiveness of the experimental modal analysis for robotic machining.

  20. Simulation of distortion and residual stress in high pressure die casting – modelling and experiments

    International Nuclear Information System (INIS)

    Hofer, P; Kaschnitz, E; Schumacher, P

    2012-01-01

    Two individual high-pressure die-casting geometries were developed in order to study the influence of process parameters and different alloys on the distortion behaviour of castings. These geometries were a stress lattice and a V-shaped sample tending to form residual stress due to different wall thickness respectively by a deliberate massive gating system. In the experimental castings the influence of the most important process parameters such as die temperature and die opening time and the cooling regime was examined. The time evolution of process temperatures was measured using thermal imaging. The heat transfer coefficients were adapted to the observed temperature distributions. Castings were produced from the two alloys AlSi12 and AlSi10MnMg. The distortion of the castings was measured by means of a tactile measuring device. For the alloy AlSi10MnMg thermo-physical and thermo-mechanical data were obtained using differential scanning calorimetry, laser flash technique, dilatometry and tensile testing at elevated temperatures. These data were used for modelling the material behaviour of the AlSi10MnMg alloy in the numerical model while for the alloy AlSi12(Fe) literature data were used. Process and stress simulation were conducted using the commercial FEM software ANSYS Workbench. A survey on the results of the comparison between simulation and experiment is given for both alloys.

  1. High Temperature Mechanical Constitutive Modeling of a High-Nb TiAl Alloy

    Directory of Open Access Journals (Sweden)

    DONG Chengli

    2018-02-01

    Full Text Available Uniaxial tensile, low cycle fatigue, fatigue-creep interaction and creep experiments of a novel high-Nb TiAl alloy (i.e. Ti-45Al-8Nb-0.2W-0.2B-0.02Y (atom fraction/% were conducted at 750℃ to obtain its tested data and curves. Based on Chaboche visco-plasticity unified constitutive model, Ohno-Wang modified non-linear kinematic hardening was introduced in Chaboche constitutive model to describe the cyclic hardening/softening, and Kachanov damage was coupled in Chaboche constitutive model to characterize the accelerated creep stage. The differential equations of the constitutive model discretized by explicit Euler method were compiled in to ABAQUS/UMAT to simulate the mechanical behavior of high-Nb TiAl alloy at different test conditions. The results show that Chaboche visco-plasticity unified constitutive model considering both Ohno-Wang modified non-linear kinematic hardening and Kachanov damage is able to simulate the uniaxial tensile, low cycle fatigue, fatigue-creep interaction and creep behavior of high-Nb TiAl alloy and has high accuracy.

  2. High pressure studies of A2Mo3O12 negative thermal expansion materials (A2=Al2, Fe2, FeAl, AlGa)

    International Nuclear Information System (INIS)

    Young, Lindsay; Gadient, Jennifer; Gao, Xiaodong; Lind, Cora

    2016-01-01

    High pressure powder X-ray diffraction studies of several A 2 Mo 3 O 12 materials (A 2 =Al 2 , Fe 2 , FeAl, and AlGa) were conducted up to 6–7 GPa. All materials adopted a monoclinic structure under ambient conditions, and displayed similar phase transition behavior upon compression. The initial isotropic compressibility first became anisotropic, followed by a small but distinct drop in cell volume. These patterns could be described by a distorted variant of the ambient pressure polymorph. At higher pressures, a distinct high pressure phase formed. Indexing results confirmed that all materials adopted the same high pressure phase. All changes were reversible on decompression, although some hysteresis was observed. The similarity of the high pressure cells to previously reported Ga 2 Mo 3 O 12 suggested that this material undergoes the same sequence of transitions as all materials investigated in this paper. It was found that the transition pressures for all phase changes increased with decreasing radius of the A-site cations. - Graphical abstract: Overlay of variable pressure X-ray diffraction data of Al 2 Mo 3 O 12 collected in a diamond anvil cell. Both subtle and discontinuous phase transitions are clearly observed. - Highlights: • The high pressure behavior of A 2 Mo 3 O 12 (A=Al, Fe, (AlGa), (AlFe)) was studied. • All compounds undergo the same sequence of pressure-induced phase transitions. • The phase transition pressures correlate with the average size of the A-site cation. • All transitions were reversible with hysteresis. • Previously studied Ga 2 Mo 3 O 12 undergoes the same sequence of transitions.

  3. Fabrication of Al2O3–20 vol.% Al nanocomposite powders using high energy milling and their sinterability

    International Nuclear Information System (INIS)

    Zawrah, M.F.; Abdel-kader, H.; Elbaly, N.E.

    2012-01-01

    Highlights: ► Al 2 O 3 /Al nanocomposite powders were prepared via high energy ball milling. After 20 h milling, the size of Al 2 O 3 –20 vol.% Al nanocomposite particles was in the range of 23–29 nm. A uniform distribution of nanosized Al reinforcement throughout the Al 2 O 3 matrix, coating the particles was successfully obtained. ► There was no any sign of phase changes during the milling. A competition between the cold welding mechanism and the fracturing mechanism were found during milling and finally the above two mechanisms reached an equilibrium. ► The highest value of relative density was obtained for the sintered bodies at 1500 °C. ► The harness of the sintered composite was decreased while the fracture toughness was improved after addition Al into alumina. -- Abstract: In this study, alumina-based matrix nanocomposite powders reinforced with Al particles were fabricated and investigated. The sinterability of the prepared nanocomposite powder at different firing temperature was also conducted. Their mechanical properties in terms of hardness and toughness were tested. Alumina and aluminum powder mixtures were milled in a planetary ball mill for various times up to 30 h in order to produce Al 2 O 3 –20% Al nanocomposite. The phase composition, morphological and microstructural changes during mechanical milling of the nanocomposite particles were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM) techniques, respectively. The crystallite size and internal strain were evaluated by XRD patterns using Scherrer methods. A uniform distribution of the Al reinforcement in the Al 2 O 3 matrix was successfully obtained after milling the powders. The results revealed that there was no any sign of phase changes during the milling. The crystal size decreased with the prolongation of milling times, while the internal strain increased. A simple model is presented to illustrate the mechanical

  4. Residual stress relaxation due to fretting fatigue in shot peened surfaces of Ti-6Al-4V

    International Nuclear Information System (INIS)

    Martinez, S.A.; Blodgett, M.P.; Mall, S.; Sathish, S.; Namjoshi, S.

    2003-01-01

    Fretting fatigue occurs at locations where the materials are sliding against each other under load. In order to enhance the fatigue life under fretting conditions the surface of the component is shot peened. In general, the shot peening process produces a compressive stress on the surface of the material, thereby increasing the resistance of the material to crack initiation. This paper presents the relaxation of residual stress caused during fretting fatigue. X-ray diffraction has been utilized as the method to measure residual stress in fretting fatigued samples of Ti-6Al-4V

  5. Compressive pre-stress effects on magnetostrictive behaviors of highly textured Galfenol and Alfenol thin sheets

    Directory of Open Access Journals (Sweden)

    Julia R. Downing

    2017-05-01

    Full Text Available Fe-Ga (Galfenol and Fe-Al (Alfenol are rare-earth-free magnetostrictive alloys with mechanical robustness and strong magnetoelastic coupling. Since highly textured Galfenol and Alfenol thin sheets along orientations have been developed with magnetostrictive performances of ∼270 ppm and ∼160 ppm, respectively, they have been of great interest in sensor and energy harvesting applications. In this work, we investigate stress-dependent magnetostrictive behaviors in highly textured rolled sheets of NbC-added Fe80Al20 and Fe81Ga19 alloys with a single (011 grain coverage of ∼90%. A compact fixture was designed and used to introduce a uniform compressive pre-stress to those thin sheet samples along a [100] direction. As compressive pre-stress was increased to above 100 MPa, the maximum observed magnetostriction increased 42% in parallel magnetostriction along the stress direction, λ//, in highly textured (011 Fe81Ga19 thin sheets for a compressive pre-stress of 60 MPa. The same phenomena were observed for (011 Fe80Al20 (maximum increase of 88% with a 49 MPa compressive stress. This trend is shown to be consistent with published results on the effect of pre-stress on magnetostriction in rods of single crystal and textured polycrystalline Fe-Ga alloy of similar compositions, and single crystal data gathered using our experimental set up. Interestingly, the saturating field (Hs does not vary with pre-stresses, while the saturating field in rod-shaped samples of Fe-Ga increases with an increase of pre-stress. This suggests that for a range of compressive pre-stresses, thin sheet samples have larger values of d33 transduction coefficients and susceptibility than rod-shaped samples of similar alloy compositions, and hence they should provide performance benefits when used in sensor and actuator device applications. Thus, we discuss potential reasons for the unexpected trends in Hs with pre-stress, and present preliminary results from tests conducted

  6. Time Management and Its Relation To Students’ Stress, Gender and Academic Achievement Among Sample of Students at Al Ain University of Science and Technology, UAE

    Directory of Open Access Journals (Sweden)

    Ahmad Saleh Al Khatib

    2014-05-01

    Full Text Available The objective of the present study was to investigate the relationship between time management, perceived stress, gender and academic achievement among United Arab Emirates college students. The respondents were 352 college students from Al Ain University of Science and Technology. The sample was stratified by sex. Among the respondents, 52.5% were female students and 47.5% were male students. The mean age of the sample was 23.4 years ranging from 18 to 39. Time management was measured by Time Management Questionnaire” developed by Britton and Tesser (1991, while perceived stress was measured by The Perceived Stress Scale developed by Cohen (1985. The findings of the study showed that there was statistically significant negative relationship between time management and perceived stress. Females reported higher time management compared to their males counter mates. Higher time management and lower perceived stress were associated with high levels of academic achievement. However, time management was the most significant predictor of academic achievement accounting for 26 % of the variance while perceived stress accounted for an additional 11.2% of the variance in academic achievement. All three predictors explained 29.4% (R = .543 of total variance. The implications and limitations are reviewed as are the suggestions for future research.   Keywords: Time management, perceived stress, academic achievement, college students.

  7. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  8. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  9. Achieving high aspect ratio wrinkles by modifying material network stress.

    Science.gov (United States)

    Chen, Yu-Cheng; Wang, Yan; McCarthy, Thomas J; Crosby, Alfred J

    2017-06-07

    Wrinkle aspect ratio, or the amplitude divided by the wavelength, is hindered by strain localization transitions when an increasing global compressive stress is applied to synthetic material systems. However, many examples from living organisms show extremely high aspect ratios, such as gut villi and flower petals. We use three experimental approaches to demonstrate that these high aspect ratio structures can be achieved by modifying the network stress in the wrinkle substrate. We modify the wrinkle stress and effectively delay the strain localization transition, such as folding, to larger aspect ratios by using a zero-stress initial wavy substrate, creating a secondary network with post-curing, or using chemical stress relaxation materials. A wrinkle aspect ratio as high as 0.85, almost three times higher than common values of synthetic wrinkles, is achieved, and a quantitative framework is presented to provide understanding the different strategies and predictions for future investigations.

  10. Stress analysis and microstructure of PVD monolayer TiN and multilayer TiN/(Ti,Al)N coatings

    NARCIS (Netherlands)

    Carvalho, NJM; Zoestbergen, E; Kooi, BJ; De Hosson, JTM

    2003-01-01

    Two PVD titanium nitride based coatings; monolayer TiN and multilayer resulting from the stacking of TiN and (Ti,Al)N layers were evaluated with respect to their stress state and microstructure. The TiN was deposited by triode evaporation ion plating, whereas the TiN/(Ti,AI)N was deposited using a

  11. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  12. Quantitative prediction of twinning stress in fcc alloys: Application to Cu-Al

    Science.gov (United States)

    Kibey, Sandeep A.; Wang, L. L.; Liu, J. B.; Johnson, H. T.; Sehitoglu, H.; Johnson, D. D.

    2009-06-01

    Twinning is one of most prevalent deformation mechanisms in materials. Having established a quantitative theory to predict onset twinning stress τcrit in fcc elemental metals from their generalized planar-fault-energy (GPFE) surface, we exemplify its use in alloys where the Suzuki effect (i.e., solute energetically favors residing at and near planar faults) is operative; specifically, we apply it in Cu-xAl ( x is 0, 5, and 8.3at.% ) in comparison with experimental data. We compute the GPFE via density-functional theory, and we predict the solute dependence of the GPFE and τcrit , in agreement with measured values. We show that τcrit correlates monotonically with the unstable twin fault energies (the barriers to twin nucleation) rather than the stable intrinsic stacking-fault energies typically suggested. We correlate the twinning behavior and electronic structure with changes in solute content and proximity to the fault planes through charge-density redistribution at the fault and changes to the layer- and site-resolved density of states, where increased bonding charge correlates with decrease in fault energies and τcrit .

  13. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    OpenAIRE

    Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

  14. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  15. High power AlGaN ultraviolet light emitters

    International Nuclear Information System (INIS)

    Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis; Garrett, Gregory A; Rodak, Lee E; Wraback, Michael; Shur, Michael

    2014-01-01

    We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality. (invited article)

  16. High power AlGaN ultraviolet light emitters

    Science.gov (United States)

    Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Garrett, Gregory A.; Rodak, Lee E.; Wraback, Michael; Shur, Michael; Gaska, Remis

    2014-06-01

    We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.

  17. Quantitative analysis of stress-induced martensites by in situ transmission electron microscopy superelastic tests in Cu-Al-Ni shape memory alloys

    International Nuclear Information System (INIS)

    No, M.L.; Ibarra, A.; Caillard, D.; San Juan, J.

    2010-01-01

    Stress-induced martensite nucleation and further growing, in Cu-Al-Ni shape memory alloys, have been studied during in situ superelastic tests in the transmission electron microscope. Two kinds of martensite, β 3 ' and γ 3 ' , are induced and can coexist under stress, both exhibiting in a high density of stacking faults. The interface plane and the orientation relationships between the different variants of such martensites have been determined, and the atomic configurations of the lattices across the interface have been described. Finally, in light of the results, selection rules for the stress-induced promoted martensites at the nano-scale have been established, being determined by the shear direction and the basal plane of the martensite lattice.

  18. On the effect of stress on nucleation and growth of precipitates in an Al-Cu-Mg-Ag alloy

    Science.gov (United States)

    Skrotzki, B.; Shiflet, G. J.; Starke, E. A.

    1996-11-01

    A study has been made of the effect of an externally applied tensile stress on Ω and Θ' precipitate nucleation and growth in an Al-Cu-Mg-Ag alloy and a binary Al-Cu alloy which was used as a model system. Both solutionized and solutionized and aged conditions were studied. The mechanical properties have been measured and the microstructures have been characterized by transmission electron microscopy (TEM). The volume fraction and number density, as well as the precipitate size, have been experimentally determined. It was found that for as-solutionized samples aged under stress, precipitation occurs preferentially parallel to the stress axis. A threshold stress has to be exceeded before this effect can be observed. The critical stress for influencing the precipitate habit plane is between 120 and 140 MPa for Ω and between 16 and 19 MPa for Θ' for the aging temperature of 160 °C. The major effect of the applied stress is on the nucleation process. The results are discussed in terms of the role of the lattice misfit between the matrix and the precipitate nucleus.

  19. Comfort food is comforting to those most stressed: evidence of the chronic stress response network in high stress women.

    Science.gov (United States)

    Tomiyama, A Janet; Dallman, Mary F; Epel, Elissa S

    2011-11-01

    Chronically stressed rodents who are allowed to eat calorie-dense "comfort" food develop greater mesenteric fat, which in turn dampens hypothalamic-pituitary-adrenocortical (HPA) axis activity. We tested whether similar relations exist in humans, at least cross-sectionally. Fifty-nine healthy premenopausal women were exposed to a standard laboratory stressor to examine HPA response to acute stress and underwent diurnal saliva sampling for basal cortisol and response to dexamethasone administration. Based on perceived stress scores, women were divided into extreme quartiles of low versus high stress categories. We found as hypothesized that the high stress group had significantly greater BMI and sagittal diameter, and reported greater emotional eating. In response to acute lab stressor, the high stress group showed a blunted cortisol response, lower diurnal cortisol levels, and greater suppression in response to dexamethasone. These cross-sectional findings support the animal model, which suggests that long-term adaptation to chronic stress in the face of dense calories result in greater visceral fat accumulation (via ingestion of calorie-dense food), which in turn modulates HPA axis response, resulting in lower cortisol levels. Copyright © 2011 Elsevier Ltd. All rights reserved.

  20. CrN/AlN nanolaminate coatings deposited via high power pulsed and middle frequency pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Bagcivan, N.; Bobzin, K.; Ludwig, A.; Grochla, D.; Brugnara, R.H.

    2014-01-01

    stress was determined via Si microcantilever curvature measurements. The phase analysis revealed the formation of h-Cr 2 N, c-CrN and c-AlN mixed phases for the mfMS CrN/AlN coatings, whereas the HPPMS coatings exhibited only cubic phases (c-CrN, c-AlN). A hardness of 31.0 GPa was measured for the HPPMS coating with a bilayer period of 6.2 nm. The decrease of the HPPMS pulse length at constant mean power leads to a considerable increase of the cathode current on the Cr and Al target associated with an increased ion flux towards the substrate. Furthermore, it was observed that the deposition rate of HPPMS CrN/AlN decreases with shorter pulse lengths, so that a CrN/AlN coating with a bilayer period of 2.9 nm, a high hardness of 40.8 GPa and a high compressive stress (− 4.37 GPa) was achieved using a short pulse length of 40 μs. - Highlights: • HPPMS and mfMS CrN/AlN nanolaminate coatings were investigated. • HPPMS CrN/AlN coatings were deposited at various pulse lengths. • Decreasing of the HPPMS pulse length leads to a reduction of bilayer period. • HPPMS CrN/AlN coating deposited at short pulse showed a super hardness of 40.8 GPa. • Short HPPMS pulse and high peak current lead to high coating compressive stress

  1. High-Risk Stress Fractures: Diagnosis and Management.

    Science.gov (United States)

    McInnis, Kelly C; Ramey, Lindsay N

    2016-03-01

    Stress fractures are common overuse injuries in athletes. They occur during periods of increased training without adequate rest, disrupting normal bone reparative mechanisms. There are a host of intrinsic and extrinsic factors, including biochemical and biomechanical, that put athletes at risk. In most stress fractures, the diagnosis is primarily clinical, with imaging indicated at times, and management focused on symptom-free relative rest with advancement of activity as tolerated. Overall, stress fractures in athletes have an excellent prognosis for return to sport, with little risk of complication. There is a subset of injuries that have a greater risk of fracture progression, delayed healing, and nonunion and are generally more challenging to treat with nonoperative care. Specific locations of high-risk stress fracture include the femoral neck (tension side), patella, anterior tibia, medial malleolus, talus, tarsal navicular, proximal fifth metatarsal, and great toe sesamoids. These sites share a characteristic region of high tensile load and low blood flow. High-risk stress fractures require a more aggressive approach to evaluation, with imaging often necessary, to confirm early and accurate diagnosis and initiate immediate treatment. Treatment consists of nonweight-bearing immobilization, often with a prolonged period away from sport, and a more methodic and careful reintroduction to athletic activity. These stress fractures may require surgical intervention. A high index of suspicion is essential to avoid delayed diagnosis and optimize outcomes in this subset of stress fractures. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  2. Effect of iron content on the structure and mechanical properties of Al25Ti25Ni25Cu25 and (AlTi)60-xNi20Cu20Fex (x=15, 20) high-entropy alloys

    International Nuclear Information System (INIS)

    Fazakas, É.; Zadorozhnyy, V.; Louzguine-Luzgin, D.V.

    2015-01-01

    Highlights: • Three new refractory alloys namely: Al 25 Ti 25 Ni 25 Cu 25 , Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 , were produced by induction-melting and casting. • This kind of alloys exhibits high resistance to annealing softening. • Most the alloys in the annealed state possess even higher Vickers microhardness than the as-cast alloys. • The Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 alloys annealed at 973 K show the highest compressive stress and ductility values. - Abstract: In this work, we investigated the microstructure and mechanical properties of Al 25 Ti 25 Ni 25 C u25 Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 high entropy alloys, produced by arc melting and casting in an inert atmosphere. The structure of these alloys was studied by X-ray diffractometry and scanning electron microscopy. The as-cast alloys were heat treated at 773, 973 and 1173 K for 1800 s to investigate the effects of aging on the plasticity, hardness and elastic properties. Compared to the conventional high-entropy alloys the Al 25 Ti 25 Ni 25 Cu 25 , Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 alloys are relatively hard and ductile. Being heat treated at 973 K the Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 alloy shows considerably high strength and relatively homogeneous deformation under compression. The plasticity, hardness and elastic properties of the studied alloys depend on the fraction and intrinsic properties of the constituent phases. Significant hardening effect by the annealing is found.

  3. Thermal oxidation of medical Ti6Al4V blasted with ceramic particles: Effects on the microstructure, residual stresses and mechanical properties.

    Science.gov (United States)

    Lieblich, M; Barriuso, S; Multigner, M; González-Doncel, G; González-Carrasco, J L

    2016-02-01

    Roughening of Ti6Al4V by blasting with alumina or zirconia particles improves the mechanical fixation of implants by increasing the surface area available for bone/implant apposition. Additional thermal oxidation treatments of the blasted alloy have already shown to be a complementary low-cost solution to enhancing the in vitro biocompatibility and corrosion resistance of the alloy. In this work, the effects of oxidation treatment on a grit blasted Ti6Al4V biomedical alloy have been analysed in order to understand the net effect of the combined treatments on the alloy fatigue properties. Synchrotron radiation diffraction experiments have been performed to measure residual stresses before and after the treatments and microstructural and hardness changes have been determined. Although blasting of Ti6Al4V with small spherical zirconia particles increases the alloy fatigue resistance with respect to unblasted specimens, fatigue strength after oxidation decreases below the unblasted value, irrespective of the type of particle used for blasting. Moreover, at 700°C the as-blasted compressive residual stresses (700MPa) are not only fully relaxed but even moderate tensile residual stresses, of about 120MPa, are found beneath the blasted surfaces. Contrary to expectations, a moderate increase in hardness occurs towards the blasted surface after oxidation treatments. This can be attributed to the fact that grit blasting modifies the crystallographic texture of the Ti6Al4V shifting it to a random texture, which affects the hardness values as shown by additional experiments on cold rolled samples. The results indicate that the oxidation treatment performed to improve biocompatibility and corrosion resistance of grit blasted Ti6Al4V should be carried out with caution since the alloy fatigue strength can be critically diminished below the value required for high load-bearing components. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

    Science.gov (United States)

    Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

    2016-12-01

    Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

  5. The role of anodic dissolution in the stress corrosion cracking of Al-Li-Cu alloy 2090

    International Nuclear Information System (INIS)

    Buchheit, R.G. Jr.; Wall, F.D.; Stoner, G.E.; Moran, J.P.

    1991-01-01

    The short-transverse (S-T) stress corrosion cracking (SCC) behavior of Al-Li-CU alloy 2090 was studied using a static load SCC test technique. Time to failure was measured as a function of applied potential in several different environments. Rapid SCC failures ( br, T1 applied br, matrix where potentials refer to the breakaway potentials of the subgrain boundary T 1 (Al 2 CuLi) phase and the α-Al matrix phase. E br values were measured using potentiodynamic polarization of bulk materials intended to simulate the individual phases found in the subgrain boundary region. Results strongly suggest an anodic dissolution based SCC mechanism for this alloy where selective dissolution of T 1 on the subgrain boundary is a critical step. The unusual pre-exposure embrittlement phenomenon demonstrated by Al- Li alloys is also shown to be consistent with these simple SCC criteria. 21 refs., 9 figs., 6 tabs

  6. Mitigating Intergranular Stress Corrosion Cracking in Age-Hardenable Al-Zn-Mg-Cu Alloys

    Science.gov (United States)

    Ajay Krishnan, M.; Raja, V. S.; Shukla, Shweta; Vaidya, S. M.

    2018-06-01

    This article reports an attempt to develop high-strength aluminum alloys of 7xxx series resistant to intergranular stress corrosion cracking (SCC). A novel aging technique reported in this work exhibited improved strength levels (as high as 100 MPa to that of conventional overaged temper for AA 7050) with significant resistance to SCC measured even at a low strain rate (10-7 s-1) in 3.5 wt pct NaCl. The novel aging heat treatment produced a microstructure that is finer and dense enough in the matrix to impart strength, whereas it is enriched with Cu on the grain boundaries to impart SCC resistance. A detailed explanation for the enhanced strength and SCC resistance is discussed.

  7. Mitigating Intergranular Stress Corrosion Cracking in Age-Hardenable Al-Zn-Mg-Cu Alloys

    Science.gov (United States)

    Ajay Krishnan, M.; Raja, V. S.; Shukla, Shweta; Vaidya, S. M.

    2018-04-01

    This article reports an attempt to develop high-strength aluminum alloys of 7xxx series resistant to intergranular stress corrosion cracking (SCC). A novel aging technique reported in this work exhibited improved strength levels (as high as 100 MPa to that of conventional overaged temper for AA 7050) with significant resistance to SCC measured even at a low strain rate (10-7 s-1) in 3.5 wt pct NaCl. The novel aging heat treatment produced a microstructure that is finer and dense enough in the matrix to impart strength, whereas it is enriched with Cu on the grain boundaries to impart SCC resistance. A detailed explanation for the enhanced strength and SCC resistance is discussed.

  8. Influence of Carrier Gas Composition on the Stress of Al2O3 Coatings Prepared by the Aerosol Deposition Method

    Directory of Open Access Journals (Sweden)

    Michael Schubert

    2014-08-01

    Full Text Available Al2O3 films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.

  9. Numerical analysis of residual stress of Al-Mg-Mn-Sc-Zr alloy subjected to surface strengthening by shot peening

    Directory of Open Access Journals (Sweden)

    Mariusz Stegliński

    2015-03-01

    Full Text Available In this paper, we presented the results of the analysis of the stresses in the Al-Mg5%-Mn1,5%-Sc0,8%-Zr0,4% alloy after shot peening process using solver ANSYSANSYSANSYS LS-Dyna. The computational model illustrates the phenomena occurring as a result of plastic deformation caused by hitting a steel ball on the surface of the analyzed aluminium alloy. We analyzed two input variables: diameter and speed of a ball. The resulting normal stress distribution centred exposes the minimum compressive stress at a position located at a depth point of Belayev 0.125 mm with a value of σ = –345 MPa. Variable parameter shows the correlation of the boundary conditions of minimum stress increase with increasing ball’s diameter and its speed. Selected points of numerical analysis were verified with experimental results.[b]Keywords[/b]: materials science, numerical analysis, metal forming, shot peening, aluminium

  10. An analysis of the flow stress of a two-phase alloy system, Ti-6Al-4V

    International Nuclear Information System (INIS)

    Reed-Hill, R.E.; Iswaran, C.V.; Kaufman, M.J.

    1996-01-01

    An analysis of the tensile deformation behavior of a two-phase body-centered cubic (bcc)-hexagonal close-packed (hcp) alloy, Ti-6Al-4V, has been made. This has shown that the temperature dependence of the flow stress, the logarithm of the effective stress, and the strain-rate sensitivities can be described by simple analytical equations if the thermally activated strain-rate equation contains the Yokobori activation enthalpy H = H 0 ln (σ* 0 /σ*), where H 0 is a constant, σ* the effective stress, and σ* 0 its 0 K value. The flow stress-temperature plateau region (500 to 600 K) also can be rationalized analytically in terms of oxygen dynamic strain aging in the alpha phase

  11. Enhancement of Impact Toughness by Delamination Fracture in a Low-Alloy High-Strength Steel with Al Alloying

    Science.gov (United States)

    Sun, Junjie; Jiang, Tao; Liu, Hongji; Guo, Shengwu; Liu, Yongning

    2016-12-01

    The effect of delamination toughening of martensitic steel was investigated both at room and low temperatures [253 K and 233 K (-20 °C and -40 °C)]. Two low-alloy martensitic steels with and without Al alloying were both prepared. Layered structure with white band and black matrix was observed in Al alloyed steel, while a homogeneous microstructure was displayed in the steel without Al. Both steels achieved high strength (tensile strength over 1600 MPa) and good ductility (elongation over 11 pct), but they displayed stark contrasts on impact fracture mode and Charpy impact energy. Delamination fracture occurred in Al alloyed steel and the impact energies were significantly increased both at room temperature (from 75 to 138 J, i.e., nearly improved up to 2 times) and low temperatures [from 47.9 to 71.3 J at 233 K (-40 °C)] compared with the one without Al. Alloying with Al promotes the segregation of Cr, Mn, Si and C elements to form a network structure, which is martensite with higher carbon content and higher hardness than that of the matrix. And this network structure evolved into a band structure during the hot rolling process. The difference of yield stress between the band structure and the matrix gives rise to a delamination fracture during the impact test, which increases the toughness greatly.

  12. Radiation Tolerance of Controlled Fusion Welds in High Temperature Oxidation Resistant FeCrAl Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gussev, Maxim N. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Field, Kevin G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    High temperature oxidation resistant iron-chromium-aluminum (FeCrAl) alloys are candidate alloys for nuclear applications due to their exceptional performance during off-normal conditions such as a loss-of-coolant accident (LOCA) compared to currently deployed zirconium-based claddings [1]. A series of studies have been completed to determine the weldability of the FeCrAl alloy class and investigate the weldment performance in the as-received (non-irradiated) state [2,3]. These initial studies have shown the general effects of composition and microstructure on the weldability of FeCrAl alloys. Given this, limited details on the radiation tolerance of FeCrAl alloys and their weldments exist. Here, the highest priority candidate FeCrAl alloys and their weldments have been investigated after irradiation to enable a better understanding of FeCrAl alloy weldment performance within a high-intensity neutron field. The alloys examined include C35M (Fe-13%Cr-5% Al) and variants with aluminum (+2%) or titanium carbide (+1%) additions. Two different sub-sized tensile geometries, SS-J type and SS-2E (or SS-mini), were neutron irradiated in the High Flux Isotope Reactor to 1.8-1.9 displacements per atom (dpa) in the temperature range of 195°C to 559°C. Post irradiation examination of the candidate alloys was completed and included uniaxial tensile tests coupled with digital image correlation (DIC), scanning electron microscopy-electron back scattered diffraction analysis (SEM-EBSD), and SEM-based fractography. In addition to weldment testing, non-welded parent material was examined as a direct comparison between welded and non-welded specimen performance. Both welded and non-welded specimens showed a high degree of radiation-induced hardening near irradiation temperatures of 200°C, moderate radiation-induced hardening near temperatures of 360°C, and almost no radiation-induced hardening at elevated temperatures near 550°C. Additionally, low-temperature irradiations showed

  13. Crystal structure and elasticity of Al-bearing phase H under high pressure

    Directory of Open Access Journals (Sweden)

    Guiping Liu

    2018-05-01

    Full Text Available Al has significant effect on properties of minerals. We reported crystal structure and elasticity of phase H, an important potential water reservoir in the mantle, which contains different Al using first principles simulations for understanding the effect of Al on the phase H. The crystal and elastic properties of Al end-member phase H (Al2O4H2 are very different from Mg end-member (MgSiO4H2 phase H and two aluminous phase H (Mg0.875Si0.875Al0.25O4H2 (12.5at%Al and Mg0.75Si0.75Al0.5O4H2 (25at% Al. However differences between Mg end-member phase H and aluminous phase H are slight except for the O-H bond length and octahedron volume. Al located at different crystal positions (original Mg or Si position of aluminous phase H has different AlO6 octahedral volumes. For three Al-bearing phase H, bulk modulus (K, shear modulus (G, compressional wave velocity (Vp and shear wave velocity (Vs increase with increasing Al content. Under high pressure, density of phase H increases with increasing Al content. The Al content affects the symmetry of the phase H and then affects the density and elastic constants of phase H. The total ground energy of phase H also increases with increasing Al content. So an energy barrier for the formation of solid solution of phase H with δ-phase AlOOH is expected. However, if the phase H with δ-phase AlOOH solid solution does exit in the mantle, it may become an important component of the mantle or leads to a low velocity layer at the mantle.

  14. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    Directory of Open Access Journals (Sweden)

    Yanli Liu

    2015-01-01

    Full Text Available The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

  15. High occupational stress and low career satisfaction of Korean surgeons.

    Science.gov (United States)

    Kang, Sang Hee; Boo, Yoon Jung; Lee, Ji Sung; Han, Hyung Joon; Jung, Cheol Woong; Kim, Chong Suk

    2015-02-01

    Surgery is a demanding and stressful field in Korea. Occupational stress can adversely affect the quality of care, decrease job satisfaction, and potentially increase medical errors. The aim of this study was to investigate the occupational stress and career satisfaction of Korean surgeons. We have conducted an electronic survey of 621 Korean surgeons for the occupational stress. Sixty-five questions were used to assess practical and personal characteristics and occupational stress using the Korean occupational stress scale (KOSS). The mean KOSS score was 49.31, which was higher than the average of Korean occupational stress (45.86) or that of other specialized professions (46.03). Young age, female gender, long working hours, and frequent night duties were significantly related to the higher KOSS score. Having spouse, having hobby and regular exercise decreased the KOSS score. Multiple linear regression analysis showed that long working hours and regular exercise were the independent factors associated with the KOSS score. Less than 50% of surgeons answered that they would become a surgeon again. Most surgeons (82.5%) did not want to recommend their child follow their career. Korean Surgeons have high occupational stress and low level of career satisfaction.

  16. Investigation of nanostructured Al-10 wt.% Zr material prepared by ball milling for high temperature applications

    International Nuclear Information System (INIS)

    Prosviryakov, A.S.; Shcherbachev, K.D.; Tabachkova, N.Yu.

    2017-01-01

    Ground chips of as-cast Al-10 wt.% Zr alloy were subjected to mechanical alloying (MA) with 5 vol.% of nanodiamond addition in a high energy planetary ball-mill. The aim of this work was to investigate the microstructure, phase transformation and mechanical properties of the material both after MA and after subsequent annealing. Optical and transmission electron microscopes were used for morphological and microstructural analysis. The effect of milling time on powder microhardness, Al lattice parameter, lattice microstrain and crystallite size was determined. It was shown that mechanical alloying of as-cast Al-10wt.%Zr alloy during 20 h leads to a complete dissolution of the primary tetragonal Al 3 Zr crystals in aluminum. At the same time, the powder microhardness increases to 370 HV. Metastable cubic Al 3 Zr phase nanoparticles precipitate from the Al solution due to its decomposition after annealing, however, the Al solid solution remains supersaturated and nanocrystalline. Compression tests at room temperature and at 300 °C showed that the strength values of the hot-pressed samples reach 822 MPa and 344 MPa, respectively. - Highlights: •As-cast Al-10 wt.% Zr alloy was mechanically alloyed with 5 vol.% nanodiamond. •The primary tetragonal Al 3 Zr crystals were completely dissolved in Al after 20 h. •Cubic Al 3 Zr phase nanoparticles precipitated from Al solution after aging. •The aged bulk material showed a high strength at room and elevated temperatures.

  17. Halogen effect for improving high temperature oxidation resistance of Ti-50Al by anodization

    Science.gov (United States)

    Mo, Min-Hua; Wu, Lian-Kui; Cao, Hua-Zhen; Lin, Jun-Pin; Zheng, Guo-Qu

    2017-06-01

    The high temperature oxidation resistance of Ti-50Al was significantly improved via halogen effect which was achieved by anodizing in an ethylene glycol solution containing with fluorine ion. The anodized Ti-50Al with holes and micro-cracks could be self-repaired during oxidation at 1000 °C. The thickness of the oxide scale increases with the prolonging of oxidation time. On the basis of halogen effect for improving the high temperature oxidation resistance of Ti-50Al by anodization, only fluorine addition into the electrolyte can effectively improve the high temperature oxidation resistance of Ti-50Al.

  18. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  19. High temperature tribological performance of CrAlYN/CrN nanoscale multilayer coatings deposited on ?-TiAl

    OpenAIRE

    Walker, J.C.; Ross, I.M.; Reinhard, C.; Rainforth, W.M.; Hovsepian, P.Eh.

    2009-01-01

    This paper details the effect of temperature on the frictional behaviour of highly novel CrAlYN/CrN multilayer coatings, deposited by High Power Impulse Magnetron Sputtering (HIPIMS) on a Titanium Aluminide alloy used as fan blade material in the aerospace and a turbo-charger wheel in the automotive industries. The work was the first to discover the high temperature oxide 'glaze' layer formation which occurred on CrN multilayer-type coatings at higher temperatures and has received significant...

  20. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    OpenAIRE

    Yanli Liu; Xifeng Yang; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

    2015-01-01

    The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with th...

  1. High-strength and high-RRR Al-Ni alloy for aluminum-stabilized superconductor

    CERN Document Server

    Wada, K; Sakamoto, H; Yamamoto, A; Makida, Y

    2000-01-01

    The precipitation type aluminum alloys have excellent performance as the increasing rate in electric resistivity with additives in the precipitation state is considerably low, compared to that of the aluminum alloy with additives in the solid-solution state. It is possible to enhance the mechanical strength without remarkable degradation in residual resistivity ratio (RRR) by increasing content of selected additive elements. Nickel is the suitable additive element because it has very low solubility in aluminum and low increasing rate in electric resistivity, and furthermore, nickel and aluminum form intermetallic compounds which effectively resist the motion of dislocations. First, Al-0.1wt%Ni alloy was developed for the ATLAS thin superconducting solenoid. This alloy achieved high yield strength of 79 MPa (R.T.) and 117 MPa (4.2 K) with high RRR of 490 after cold working of 21% in area reduction. These highly balanced properties could not be achieved with previously developed solid-solution aluminum alloys. ...

  2. High precision stress measurements in semiconductor structures by Raman microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Uhlig, Benjamin

    2009-07-01

    Stress in silicon structures plays an essential role in modern semiconductor technology. This stress has to be measured and due to the ongoing miniaturization in today's semiconductor industry, the measuring method has to meet certain requirements. The present thesis deals with the question how Raman spectroscopy can be used to measure the state of stress in semiconductor structures. In the first chapter the relation between Raman peakshift and stress in the material is explained. It is shown that detailed stress maps with a spatial resolution close to the diffraction limit can be obtained in structured semiconductor samples. Furthermore a novel procedure, the so called Stokes-AntiStokes-Difference method is introduced. With this method, topography, tool or drift effects can be distinguished from stress related influences in the sample. In the next chapter Tip-enhanced Raman Scattering (TERS) and its application for an improvement in lateral resolution is discussed. For this, a study is presented, which shows the influence of metal particles on the intensity and localization of the Raman signal. A method to attach metal particles to scannable tips is successfully applied. First TERS scans are shown and their impact on and challenges for high resolution stress measurements on semiconductor structures is explained. (orig.)

  3. Transitions in Al Coordination during Gibbsite Crystallization Using High-Field 27 Al and 23 Na MAS NMR Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Jian Zhi [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Zhang, Xin [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Jaegers, Nicholas R. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Wan, Chuan [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Graham, Trent R. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Hu, Mary [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Pearce, Carolyn I. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Felmy, Andrew R. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Clark, Sue B. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Rosso, Kevin M. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States

    2017-11-30

    Mechanisms of nucleation and growth of Al hydroxides such as gibbsite from aqueous solution, particularly in highly alkaline conditions, remain poorly understood. In this work, quantitative 27Al and 22Na MAS NMR experiments were conducted on solid samples extracted from the crystallization of gibbsite from an amorphous aluminum hydroxide gel precursor. The use of high magnetic field and fast sample spinning allowed transitional tetrahedral (AlT) and pentahedral (AlP) aluminum species to be observed along with the octahedral aluminum (AlO) that dominates the gibbsite product. Low-coordinated Al species could be detected at concentrations as low as 0.1% of the total Al sites. It is established that (a) AlT and AlP coexist on the surface of growing gibbsites even with a combined percentage over the total Al sites of less than 1%; (b) Different synthesis methods generate gibbsite with varying amounts of low-coordinated Al; (c) the amorphous gel precursor contains a significant amount of low-coordinated Al sites with AO: AlP: AlT ratios of approximately 4:2:1; (d) upon hydration, the external, low-coordinated Al sites become six-fold coordinated by interacting with the oxygen in H2O and the 27Al MAS NMR peak position shifts to that for the AlO sites; (e) gibbsite with increased long range order is synthesized over longer times by gradually incorporating residual AlP and AlT sites into octahedrally-coordinated AlO sites; (f) trace Na is predominantly a surface species on gibbsite particles. These findings provide a basis for understanding the gibbsite crystallization mechanism, along with a general means of characterizing gibbsite surface properties that are of equal importance for understanding related processes such as dissolution behavior.

  4. Stress and sleep quality in high school brazilian adolescents

    Directory of Open Access Journals (Sweden)

    Gema Mesquita

    2010-06-01

    Full Text Available OBJECTIVE: The objective of the present study is to analyze the effect of stress on sleep quality in a group of adolescents. METHOD: Two high schools in Alfenas, southern Minas Gerais State, Brazil, were chosen to participate in the study. The sample consisted of both genders (n=160 with 65.63% females. The age range of participants was 15 to18 years. The Pittsburgh Sleep Quality Index (PSQI was applied for collection of data to quantify sleep quality. The Lipp Inventory of Stress Symptoms that objectively identifies symptoms of stress was applied. RESULTS: It was observed that 23.53% of stressed students and 45.33% of unstressed ones sleep well; 76.47% of stressed pupils and 54.67% of those unstressed do not sleep well. With regard to school performance, a mean of 0.65 was found for stressed students and 0.60 for those without stress, Mann-Whitney (p=0.0596. CONCLUSION: Stress contributed to raising the percentage of poor sleepers, as ell as increasing ean school performance.OBJETIVO: O objetivo do presente estudo foi analisar a influência do stress sobre a qualidade do sono em um grupo de adolescentes. MÉTODO: Foram escolhidas duas instituições educacionais do ensino médio, na cidade de Alfenas, sul de Minas Gerais, Brasil. A amostra foi composta por ambos os sexos (n=160, com 65,63% do sexo feminino. A faixa etária dos participantes foi de 15 a 18 anos. Para a coleta de dados aplicou-se: Índice de Qualidade de Sono de Pittsburgh (IQSP utilizado para quantificar a qualidade do sono; o Inventário de Sintomas de Stress para Adultos de Lipp (ISSL que identifica de modo objetivo a sintomatologia de stress foi aplicado. RESULTADOS: Observou-se que 23,53% dos estressados dormem bem e 45,33% dos não estressados dormem bem; 76,47% dos estressados não dormem bem e 54,67% dos não estressados não dormem bem. Quanto ao rendimento escolar têm-se as médias 0,65 para os alunos estressados e 0,60 para aqueles que não sofrem de stress, Mann

  5. Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

    International Nuclear Information System (INIS)

    Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

    2008-01-01

    Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

  6. Stress distribution in a transversely loaded cross-shaped single fiber SCS-6/Ti-6Al-4V composite

    International Nuclear Information System (INIS)

    Warrier, S.G.; Gundel, D.B.; Majumdar, B.S.; Miracle, D.B.

    1996-01-01

    In most structural applications utilizing fiber reinforced metal matrix composites (MMCs), the mechanical response normal to the fiber direction has to be considered. The transverse response is very sensitive to the interface bond strength, which has commonly been determined by testing straight-sided 90 degree specimens and interpreting debond initiation from the knee in the stress-strain curve as well as from a sudden drop in the Poisson's ratio. In an attempt to modify the debond initiation site to an internal location free of uncharacteristic states of stress, a cross-shaped specimen has been developed. Experiments conducted by Gundel et al. indicated that this geometry was successful in obtaining the appropriate crack initiation site. In the present study, finite element analysis (FEA) was done on the cross-shaped specimen to obtain the stress distribution in the composite under transverse loading, in an effort to corroborate the success of this geometry in determining the true transverse response of the composite

  7. High damping Al-Fe-Mo-Si/Zn-Al composites produced by rapidly solidified powder metallurgy process

    International Nuclear Information System (INIS)

    Li, P.Y.; Dai, S.L.; Chai, S.C.; Li, Y.R.

    2000-01-01

    The metallic materials commonly used in aircraft and aerospace fields, such as aluminum and titanium alloys, steels, etc., show extremely low damping capacity (usually of the order of or less than 10 -3 ). Thus, some problems related to vibration may emerge and influence the reliability, safety and life of airplanes, satellites, etc. It has been reported that almost two thirds of errors for rockets and satellites are related to vibration and noise. One effective way to solve these vibration-related problems is to adopt high damping metallic materials. Conventional high damping alloys exhibit damping capacity above 10 -2 , however, their densities are usually great than 5 x 10 3 kg m -3 , or their strengths are less than 200 MPa (for alloys based on dislocation damping), making them impossible to be applied to aircraft and aerospace areas. Recently, some low-density high-damping metal/metal composites based on aluminum and high damping alloys have been developed in Beijing Institute of Aeronautical Materials (BIAM) by the rapidly solidified power metallurgy process. This paper aims to report the properties of the composites based on a high temperature Al-Fe-Mo-Si alloy and a high damping Zn-Al alloy, and compare them with that of 2618-T61 alloy produced by the ingot metallurgy process

  8. Synthesis of high surface area spinel-type MgAl2O4 nanoparticles by

    Indian Academy of Sciences (India)

    68

    Spinel-type magnesium aluminate, MgAl2O4, is an effective refractory ceramic for ... such as good mechanical strength at high temperatures, high resistance to ... Materials. The starting chemicals with laboratory grade purity were provided ...

  9. Piezoelectrically-induced stress-luminescence phenomenon in CaAl{sub 2}O{sub 4}:Eu{sup 2+}

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Yongbin [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Wu, Zheng, E-mail: wuzheng@zjnu.cn [College of Geography and Environmental Sciences, Zhejiang Normal University, Jinhua 321004 (China); Jia, Yanmin, E-mail: ymjia@zjnu.edu.cn [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Liu, Yongsheng [Department of Physics, Shanghai University of Electric Power, Shanghai 200090 (China)

    2015-10-15

    Piezoelectrically-induced stress-luminescence in the CaAl{sub 2}O{sub 4}:Eu{sup 2+} was investigated. Blue light that was visible to the naked eye could be observed in the dark when a pulse force of ∼7.7 kN was applied to the sample. The intensity of the stress-luminescence strongly depended on the magnitude of the applied force during a pulse cycle. The intensity decreased with repetitive application of pulse stress and was completely recovered after irradiation with ultraviolet light. It is suggested that the stress-luminescence effect in CaAl{sub 2}O{sub 4}:Eu{sup 2+} arises from the piezoelectrically-induced de-trapping of the charge carriers. A CaAl{sub 2}O{sub 4}:Eu{sup 2+} ceramic that exhibits a stress-luminescence effect has potential applications in smart stress optically-sensing devices. - Highlights: • The strong induced stress-luminescence in CaAl{sub 2}O{sub 4}:Eu{sup 2+} was observed. • The stress-luminescent intensity strongly depends on the magnitude of force. • The stress-luminescence could be completely recovered after the UV irradiation. • The strong stress-luminescent effect is potential in stress-light sensors.

  10. Proteomic analysis of a high aluminum tolerant yeast Rhodotorula taiwanensis RS1 in response to aluminum stress.

    Science.gov (United States)

    Wang, Chao; Wang, Chang Yi; Zhao, Xue Qiang; Chen, Rong Fu; Lan, Ping; Shen, Ren Fang

    2013-10-01

    Rhodotorula taiwanensis RS1 is a high-aluminum (Al)-tolerant yeast that can survive in Al concentrations up to 200mM. The mechanisms for the high Al tolerance of R. taiwanensis RS1 are not well understood. To investigate the molecular mechanisms underlying Al tolerance and toxicity in R. taiwanensis RS1, Al toxicity-induced changes in the total soluble protein profile were analyzed using two-dimensional gel electrophoresis (2-DE) coupled with mass spectrometry. A total of 33 differentially expressed proteins responding to Al stress were identified from approximately 850 reproducibly detected proteins. Among them, the abundance of 29 proteins decreased and 4 increased. In the presence of 100mM Al, the abundance of proteins involved in DNA transcription, protein translation, DNA defense, Golgi functions and glucose metabolism was decreased. By contrast, Al treatment led to increased abundance of malate dehydrogenase, which correlated with increased malate dehydrogenase activity and the accumulation of intracellular citrate, suggesting that Al-induced intracellular citrate could play an important role in detoxification of Al in R. taiwanensis RS1. © 2013.

  11. Effects of high mean stress on the high-cycle fatigue behavior of PWA 1480

    International Nuclear Information System (INIS)

    Majumdar, S.; Antolovich, S.; Milligan, W.

    1985-03-01

    PWA 1480 is a potential candidate material for use in the high-pressure fuel turbine blade of the Space Shuttle Main Engine. As an engine material it will be subjected to high-cycle fatigue loading superimposed on a high mean stress due to combined centrifugal and thermal loadings. This paper describes results obtained in an ongoing program to determine the effects of a high mean stress on the high-cycle fatigue behavior of this material

  12. High temperature oxidation of thin FeCrAl strips

    International Nuclear Information System (INIS)

    Andrieu, E.; Germidis, A.; Molins, R.

    1997-01-01

    This study concerns the oxidation behaviour between 850 and 1100 C of FeCrAl thin strips. Oxidation kinetics have been continuously recorded on a thermobalance as well as discontinuously in an ''industrial'' furnace. Detailed observations of oxide layers have been performed in transmission electron microscopy on oxidized thin foil cross-sections. Oxide morphologies are correlated with kinetics: Slow kinetics and columnar α alumina grains above 950 C, fast kinetics and transition alumina platelets (γ-alumina) at 850 C and 900 C, followed by small α-alumina grains formation underneath. The weight gains in the industrial furnace displayed significant scatter and were generally greater than those measured in the thermobalance. The effect of extrinsic factors such as specimen size and shape, atmosphere, air flow conditions on the early formation of transition aluminas explains the observed differences. It appears then that in given cases parabolic constant identification from TGA recordings is difficult, or even impossible. This might contribute to explain the differences in the results presented in the literature. (orig.)

  13. Simulation investigation of thermal phase transformation and residual stress in single pulse EDM of Ti-6Al-4V

    Science.gov (United States)

    Tang, Jiajing; Yang, Xiaodong

    2018-04-01

    The thermal phase transformation and residual stress are ineluctable in the electrical discharge machining (EDM) process, and they will greatly affect the working performances of the machined surface. This paper presents a simulation study on the thermal phase transformation and residual stress in single-pulse EDM of Ti-6Al-4V, which is the most popular titanium alloy in fields such as aircraft engine and some other leading industries. A multi-physics model including thermal, hydraulic, metallography and structural mechanics was developed. Based on the proposed model, the thickness and metallographic structure of the recast layer and heat affected layer (HAZ) were investigated. The distribution and characteristics of residual stress around the discharge crater were obtained. The recast layer and HAZ at the center of crater are found to be the thinnest, and their thicknesses gradually increase approaching the periphery of the crater. The recast layer undergoes a complete α‧ (martensitic) transformation, while the HAZ is mainly composed by the α  +  β  +  α‧ three-phase microstructure. Along the depth direction of crater, the Von Mises stress increases first and then decreases, reaching its maximal value near the interface of recast layer and HAZ. In the recast layer, both compressive stress component and tensile stress component are observed. ANOVA results showed that the influence of discharge current on maximal tensile stress is more significant than that of pulse duration, while the pulse duration has more significant influence on average thickness of the recast layer and the depth location of the maximal tensile stress. The works conducted in this study will help to evaluate the quality and integrity of EDMed surface, especially when the non-destructive testing is difficult to achieve.

  14. Synthesis of high-surface-area spinel-type MgAl2O4 nanoparticles ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 40; Issue 1. Synthesis of high-surface-area spinel-type MgAl 2 O 4 nanoparticles by [Al(sal) 2 (H 2 O) 2 ] 2 [Mg(dipic) 2 ] and [Mg(H 2 O) 6 ][Al(ox) 2 (H 2 O) 2 ] 2 ·5H 2 O: influence of inorganic precursor type. Volume 40 Issue 1 February 2017 pp 45-53 ...

  15. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  16. Creep and rupture of an ODS alloy with high stress rupture ductility. [Oxide Dispersion Strengthened

    Science.gov (United States)

    Mcalarney, M. E.; Arsons, R. M.; Howson, T. E.; Tien, J. K.; Baranow, S.

    1982-01-01

    The creep and stress rupture properties of an oxide (Y2O3) dispersion strengthened nickel-base alloy, which also is strengthened by gamma-prime precipitates, was studied at 760 and 1093 C. At both temperatures, the alloy YDNiCrAl exhibits unusually high stress rupture ductility as measured by both elongation and reduction in area. Failure was transgranular, and different modes of failure were observed including crystallographic fracture at intermediate temperatures and tearing or necking almost to a chisel point at higher temperatures. While the rupture ductility was high, the creep strength of the alloy was low relative to conventional gamma prime strengthened superalloys in the intermediate temperature range and to ODS alloys in the higher temperature range. These findings are discussed with respect to the alloy composition; the strengthening oxide phases, which are inhomogeneously dispersed; the grain morphology, which is coarse and elongated and exhibits many included grains; and the second phase inclusion particles occurring at grain boundaries and in the matrix. The creep properties, in particular the high stress dependencies and high creep activation energies measured, are discussed with respect to the resisting stress model of creep in particle strengthened alloys.

  17. Comparison Between Nb3Al and Nb3Sn Strands and Cables for High Field Accelerator Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, R.; Kikuchi, A.; Barzi, E.; Chlachidze, G.; Rusy, A.; Takeuchi, T.; Tartaglia, M.; Turrioni, D.; Velev, V.; Wake, M.; Zlobin, A.V.; /Fermilab

    2010-01-01

    The Nb{sub 3}Al small racetrack magnet, SR07, has been successfully built and tested to its short sample limit beyond 10 Tesla without any training. Thus the practical application of Nb{sub 3}Al strands for high field accelerator magnets is established. The characteristics of the representative F4 strand and cable, are compared with the typical Nb{sub 3}Sn strand and cable. It is represented by the OST high current RRP Nb{sub 3}Sn strand with 108/127 configuration. The effects of Rutherford cabling to both type strands are explained and the inherent problem of the Nb{sub 3}Sn strand is discussed. Also the test results of two representative small racetrack magnets are compared from the stand point of Ic values, and training. The maximum current density of the Nb{sub 3}Al strands is still smaller than that of the Nb{sub 3}Sn strands, but if we take into account of the stress-strain characteristics, Nb{sub 3}Al strands become somewhat favorable in some applications.

  18. Internal Stresses in Wires for High Field Magnets

    International Nuclear Information System (INIS)

    Han, K.; Embury, J.D.; Lawson, A.C.; Von Dreele, R.B.; Wood, J.T.; Richardson, J.W. Jr.

    1998-01-01

    The codeformation of Cu-Ag or Cu-Nb composite wires used for high field magnets has a number of important microstructural consequences, including the production of very fine scale structures, the development of very high internal surface area to volume ratios during the drawing and the storage of defects at interphase interfaces. In addition, the fabrication and codeformation of phases which differ in crystal structure, thermal expansion, elastic modulus and lattice parameter lead to the development of short wavelength internal stresses. These internal stresses are measured by neutron diffraction and transmission electron microscopy as a function of the imposed drawing strain. The internal stresses lead to important changes in elastic plastic response which can be related to both magnet design and service life and these aspects will be described in detail

  19. Machine Learning for High-Throughput Stress Phenotyping in Plants.

    Science.gov (United States)

    Singh, Arti; Ganapathysubramanian, Baskar; Singh, Asheesh Kumar; Sarkar, Soumik

    2016-02-01

    Advances in automated and high-throughput imaging technologies have resulted in a deluge of high-resolution images and sensor data of plants. However, extracting patterns and features from this large corpus of data requires the use of machine learning (ML) tools to enable data assimilation and feature identification for stress phenotyping. Four stages of the decision cycle in plant stress phenotyping and plant breeding activities where different ML approaches can be deployed are (i) identification, (ii) classification, (iii) quantification, and (iv) prediction (ICQP). We provide here a comprehensive overview and user-friendly taxonomy of ML tools to enable the plant community to correctly and easily apply the appropriate ML tools and best-practice guidelines for various biotic and abiotic stress traits. Copyright © 2015 Elsevier Ltd. All rights reserved.

  20. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-01-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  1. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  2. Microstructure evolution of Mo–Si–Al system during self-propagation high-temperature synthesis

    International Nuclear Information System (INIS)

    Jia, Lei; Xie, Hui; Lu, Zhen-lin; Zhang, Chao

    2013-01-01

    Highlights: ► Phase transformation subsequence of the reaction system was given by a sketch. ► Transformation of MoSi 2 to Mo(Si, Al) 2 phase was observed by XRD analysis. ► Variation of diffraction peaks was discussed by lattice parameters calculation. -- Abstract: The microstructure and phase constitution of Mo(Si 1−x , Al x ) 2 alloys (x = 0.03, 0.1 and 0.4) prepared by self-propagation high-temperature synthesis is first investigated using SEM, EDS and XRD analysis. Then the lattice parameters and adiabatic temperature are calculated. Based on the above experimental and calculated results, the variation mechanism of diffraction peaks and phase transformation subsequence of the Mo–MoO 3 –Si–Al powders is discussed. Results show that, when the self-propagation reaction is over, there are a homogeneous Mo–Si–Al alloy melt and a fused Al 2 O 3 with lower density at top. Subsequently, MoSi 2 or Mo(Si, Al) 2 phase nucleates and grows as a primary phase in the Mo–Si–Al alloy melts, and then Al, Si substances are generated from the intergranular residual Al–Si liquid according to Al–Si binary phase diagram. The Al increase in the starting powder mixtures leads to the Al concentration increase in the Mo–Si–Al alloy melt. Consequently, MoSi 2 is transformed to Mo(Si, Al) 2 to phase in which Si is replaced by Al atoms and Al substance in the intergranular zones increased accordingly

  3. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

    Science.gov (United States)

    Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

    2016-11-21

    AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

  4. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Effects of high concentration of chromium stress on physiological ...

    African Journals Online (AJOL)

    We studied the effects of high concentration of chromium (Cr) stress on physiological and biochemical characters and accumulation of Cr in Pingyang Tezao tea [Camellia sinensis (L) O. Kutze 'Pingyangtezao'] through a pot experiment. The results show that the indicators of photosynthesis were all suppressed with ...

  6. Casting defects and mechanical properties of high pressure die cast Mg-Zn-Al-RE alloys

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Wenlong; Easton, Mark A.; Zhu, Suming; Nie, Jianfeng [CAST Cooperative Research Centre, Department of Materials Engineering Monash University, Melbourne, VIC (Australia); Dargusch, Matthew S. [School of Mechanical and Mining Engineering, University of Queensland, Brisbane, QLD (Australia); Gibson, Mark A. [CSIRO Process Science and Engineering, Melbourne, VIC (Australia); Jia, Shusheng [Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering Jilin University, Changchun (China)

    2012-02-15

    The die casting defects and tensile properties of high pressure die cast (HPDC) Mg-Zn-Al-RE alloys with various combinations of Zn and Al were studied. The results show that die casting defects in Mg-Zn-Al-RE alloys are affected by the percentage of Zn and Al contents. The hot tearing susceptibility (HTS) of Mg-Zn-Al-RE alloys tends to increase with increasing Zn content up to 6 wt%, while a further increase of Al and/or Zn content reduces the HTS. In tensile tests, the yield strength (YS) is generally improved by increasing Zn or Al content, whereas the tensile strength (TS) and ductility appear to depend largely on the presence of casting defects. Compared with Mg-Zn-Al alloys, the mechanical properties of the Mg-Zn-Al-RE alloy are significantly improved. The Mg-4Zn-4Al-4RE alloy is found to have few casting defects and the optimal tensile properties. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Effect of mean stress (stress ratio) and aging on fatigue-crack growth in a metastable beta titanium alloy, Ti-10V-2Fe-3Al

    International Nuclear Information System (INIS)

    Jha, S.K.; Ravichandran, K.S.

    2000-01-01

    The effect of mean stress, or the stress ratio (R), on the fatigue-crack growth (FCG) behavior of α-aged and ω-aged microstructures of the beta titanium alloy Ti-10V-2Fe-3Al was investigated. While the mean stress had a negligible effect on the FCG behavior of the α-aged microstructure, a strong effect was observed in the ω-aged microstructure. In particular, the values of the threshold stress-intensity range (ΔK th ) exhibited a strong dependence on R in the ω-aged microstructure, while this dependence was weak in the α-aged microstructure. These effects seem to arise primarily from fracture-surface roughness-induced crack closure. The crack closure levels for the α-aged microstructure were found to be very low compared to those for the ω-aged microstructure. Transmission electron microscopy and scanning electron microscopy studies of microstructures and fracture surfaces were performed to gain insight into the deformation characteristics and crack propagation mechanisms, respectively, in these microstructures. The microstructure-induced differences in FCG behavior are rationalized in terms of the effect of aging on slip and crack closure

  8. High salt intake enhances swim stress-induced PVN vasopressin cell activation and active stress coping.

    Science.gov (United States)

    Mitchell, N C; Gilman, T L; Daws, L C; Toney, G M

    2018-07-01

    Stress contributes to many psychiatric disorders; however, responsivity to stressors can vary depending on previous or current stress exposure. Relatively innocuous heterotypic (differing in type) stressors can summate to result in exaggerated neuronal and behavioral responses. Here we investigated the ability of prior high dietary sodium chloride (salt) intake, a dehydrating osmotic stressor, to enhance neuronal and behavioral responses of mice to an acute psychogenic swim stress (SS). Further, we evaluated the contribution of the osmo-regulatory stress-related neuropeptide arginine vasopressin (VP) in the hypothalamic paraventricular nucleus (PVN), one of only a few brain regions that synthesize VP. The purpose of this study was to determine the impact of high dietary salt intake on responsivity to heterotypic stress and the potential contribution of VPergic-mediated neuronal activity on high salt-induced stress modulation, thereby providing insight into how dietary (homeostatic) and environmental (psychogenic) stressors might interact to facilitate psychiatric disorder vulnerability. Salt loading (SL) with 4% saline for 7 days was used to dehydrate and osmotically stress mice prior to exposure to an acute SS. Fluid intake and hematological measurements were taken to quantify osmotic dehydration, and serum corticosterone levels were measured to index stress axis activation. Immunohistochemistry (IHC) was used to stain for the immediate early gene product c-Fos to quantify effects of SL on SS-induced activation of neurons in the PVN and extended amygdala - brain regions that are synaptically connected and implicated in responding to osmotic stress and in modulation of SS behavior, respectively. Lastly, the role of VPergic PVN neurons and VP type 1 receptor (V1R) activity in the amygdala in mediating effects of SL on SS behavior was evaluated by quantifying c-Fos activation of VPergic PVN neurons and, in functional experiments, by nano-injecting the V1R selective

  9. Investigation of nanostructured Al-10 wt.% Zr material prepared by ball milling for high temperature applications

    Energy Technology Data Exchange (ETDEWEB)

    Prosviryakov, A.S., E-mail: pro.alex@mail.ru; Shcherbachev, K.D.; Tabachkova, N.Yu.

    2017-01-15

    Ground chips of as-cast Al-10 wt.% Zr alloy were subjected to mechanical alloying (MA) with 5 vol.% of nanodiamond addition in a high energy planetary ball-mill. The aim of this work was to investigate the microstructure, phase transformation and mechanical properties of the material both after MA and after subsequent annealing. Optical and transmission electron microscopes were used for morphological and microstructural analysis. The effect of milling time on powder microhardness, Al lattice parameter, lattice microstrain and crystallite size was determined. It was shown that mechanical alloying of as-cast Al-10wt.%Zr alloy during 20 h leads to a complete dissolution of the primary tetragonal Al{sub 3}Zr crystals in aluminum. At the same time, the powder microhardness increases to 370 HV. Metastable cubic Al{sub 3}Zr phase nanoparticles precipitate from the Al solution due to its decomposition after annealing, however, the Al solid solution remains supersaturated and nanocrystalline. Compression tests at room temperature and at 300 °C showed that the strength values of the hot-pressed samples reach 822 MPa and 344 MPa, respectively. - Highlights: •As-cast Al-10 wt.% Zr alloy was mechanically alloyed with 5 vol.% nanodiamond. •The primary tetragonal Al{sub 3}Zr crystals were completely dissolved in Al after 20 h. •Cubic Al{sub 3}Zr phase nanoparticles precipitated from Al solution after aging. •The aged bulk material showed a high strength at room and elevated temperatures.

  10. Fatigue crack closure behavior at high stress ratios

    Science.gov (United States)

    Turner, C. Christopher; Carman, C. Davis; Hillberry, Ben M.

    1988-01-01

    Fatigue crack delay behavior at high stress ratio caused by single peak overloads was investigated in two thicknesses of 7475-T731 aluminum alloy. Closure measurements indicated no closure occurred before or throughout the overload plastic zones following the overload. This was further substantiated by comparing the specimen compliance following the overload with the compliance of a low R ratio test when the crack was fully open. Scanning electron microscope studies revealed that crack tunneling and possibly reinitiation of the crack occurred, most likely a result of crack-tip blunting. The number of delay cycles was greater for the thinner mixed mode stress state specimen than for the thicker plane strain stress state specimen, which is similar to low R ratio test results and may be due to a larger plastic zone for the mixed mode cased.

  11. Integrative Medicine Patients Have High Stress, Pain, and Psychological Symptoms.

    Science.gov (United States)

    Wolever, Ruth Q; Goel, Nikita S; Roberts, Rhonda S; Caldwell, Karen; Kligler, Benjamin; Dusek, Jeffery A; Perlman, Adam; Dolor, Rowena; Abrams, Donald I

    2015-01-01

    Integrative medicine (IM) is a rapidly growing field whose providers report clinical success in treating significant stress, chronic pain, and depressive and anxiety symptoms. While IM therapies have demonstrated efficacy for numerous medical conditions, IM for psychological symptoms has been slower to gain recognition in the medical community. This large, cross-sectional study is the first of its kind to document the psychosocial profiles of 4182 patients at 9 IM clinics that form the BraveNet Practice-Based Research Network (PBRN). IM patients reported higher levels of perceived stress, pain, and depressive symptoms, and lower levels of quality of life compared with national norms. Per provider reports, 60% of patients had at least one of the following: stress (9.3%), fatigue (10.2%), anxiety (7.7%), depression (7.2%), and/or sleep disorders (4.8%). Pain, having both physiological and psychological components, was also included and is the most common condition treated at IM clinics. Those with high stress, psychological conditions, and pain were most frequently treated with acupuncture, IM physician consultation, exercise, chiropractic services, diet/nutrition counseling, and massage. With baseline information on clinical presentation and service utilization, future PBRN studies can examine promising interventions delivered at the clinic to treat stress and psychological conditions. Copyright © 2015 Elsevier Inc. All rights reserved.

  12. Psychological stress in high level sailors during competition

    Directory of Open Access Journals (Sweden)

    Luciana Segato

    2010-09-01

    Full Text Available The purpose of this work was to investigate the psychological stress present in elite sailors in a competition. Based on a descriptive field research, 31 elite sailors volunteered to participate. They answered the Perceived Stress Scale (Cohen & Williamson, 1988 and also specific questions on self-control, sources and strategies of coping. Data were analyzed by using descriptive and inferential (Student t test and Pearson's correlation statistics. These athletes revealed low and moderate scores (M = 20.00, DP = 6.83 of stress originated from both intrinsic (ship troubles, team disorders and extrinsic (study, working and training, family and financial problems sources. The group reported good stress control during competition through the use of cognitive (avoidance and somatic (listening music, resting/sleeping, talk to friends strategies. It is important that sailors are able to control and cope with high levels of psychological stress and to understand how to proceed when under unstable and unexpected situations that arise during competition.

  13. Psychological stress in high level sailors during competition

    Directory of Open Access Journals (Sweden)

    L. Segato

    2010-01-01

    Full Text Available The purpose of this work was to investigate the psychological stress present in elite sailors in a competition. Based on a descriptive field research, 31 elite sailors volunteered to participate. They answered the Perceived Stress Scale (Cohen & Williamson, 1988 and also specific questions on self-control, sources and strategies of coping. Data were analyzed by using descriptive and inferential (Student t test and Pearson's correlation statistics. These athletes revealed low and moderate scores (M = 20.00, DP = 6.83 of stress originated from both intrinsic (ship troubles, team disorders and extrinsic (study, working and training, family and financial problems sources. The group reported good stress control during competition through the use of cognitive (avoidance and somatic (listening music, resting/sleeping, talk to friends strategies. It is important that sailors are able to control and cope with high levels of psychological stress and to understand how to proceed when under unstable and unexpected situations that arise during competition.

  14. High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

    International Nuclear Information System (INIS)

    Wu, B.-R.; Liao, C.; Cheng, K. Y.

    2008-01-01

    High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

  15. Reaction rim growth in the system MgO-Al2O3-SiO2 under uniaxial stress

    Science.gov (United States)

    Götze, Lutz Christoph; Abart, Rainer; Rybacki, Erik; Keller, Lukas M.; Petrishcheva, Elena; Dresen, Georg

    2010-07-01

    We synthesize reaction rims between thermodynamically incompatible phases in the system MgO-Al2O3-SiO2 applying uniaxial load using a creep apparatus. Synthesis experiments are done in the MgO-SiO2 and in the MgO-Al2O3 subsystems at temperatures ranging from 1150 to 1350 °C imposing vertical stresses of 1.2 to 29 MPa at ambient pressure and under a constant flow of dry argon. Single crystals of synthetic and natural quartz and forsterite, synthetic periclase and synthetic corundum polycrystals are used as starting materials. We produce enstatite rims at forsterite-quartz contacts, enstatite-forsterite double rims at periclase-quartz contacts and spinel rims at periclase-corundum contacts. We find that rim growth under the “dry” conditions of our experiments is sluggish compared to what has been found previously in nominally “dry” piston cylinder experiments. We further observe that the nature of starting material, synthetic or natural, has a major influence on rim growth rates, where natural samples are more reactive than synthetic ones. At a given temperature the effect of stress variation is larger than what is anticipated from the modification of the thermodynamic driving force for reaction due to the storage of elastic strain energy in the reactant phases. We speculate that this may be due to modification of the physical properties of the polycrystals that constitute the reaction rims or by deformation under the imposed load. In our experiments rim growth is very sluggish at forsterite-quartz interfaces. Rim growth is more rapid at periclase-quartz contacts. The spinel rims that are produced at periclase-corundum interfaces show parabolic growth indicating that reaction rim growth is essentially diffusion controlled. From the analysis of time series done in the MgO-Al2O3 subsystem we derive effective diffusivities for the Al2O3 and the MgO components in a spinel polycrystal as D_{MgO} = 1.4 ± 0.2 \\cdot 10^{-15} m2/s and D_{Al_2O_3} = 3.7 ± 0

  16. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  17. Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

    Directory of Open Access Journals (Sweden)

    Lin Shu

    2016-09-01

    Full Text Available High temperature characteristics of langasite surface acoustic wave (SAW devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2 of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices.

  18. Low IDL-B and high LDL-1 subfraction levels in serum of ALS patients.

    Science.gov (United States)

    Delaye, J B; Patin, F; Piver, E; Bruno, C; Vasse, M; Vourc'h, P; Andres, C R; Corcia, P; Blasco, H

    2017-09-15

    Converging evidence highlights that lipid metabolism plays a key role in ALS pathophysiology. Dyslipidemia has been described in ALS patients and may be protective but peripheral lipoprotein subclasses have never been studied. We collected sera from 30 ALS patients and 30 gender and age-matched controls. We analyzed 11 distinct lipoprotein subclasses by linear polyacrylamide gel electrophoresis (Lipoprint, Quantimetrix Corporation, USA). We also measured lipoprotein (a), apolipoprotein B, and apolipoprotein E levels. ALS patients had significant higher total cholesterol, HDL-cholesterol, and LDL-cholesterol levels than controls (pALS patients than controls. Our preliminary work confirmed the association between ALS and dyslipidemia. The low IDL-B levels may explain the hepatic steatosis frequently reported in ALS. The high levels of the cholesterol-rich LDL-1 subfraction is consistent with previously reported hypercholesterolemia. This study describes, for the first time, the distribution of serum lipoproteins in ALS patients, with low IDL-B and high LDL-1 subfraction level. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Preparation and spectroscopic properties of Yb-doped and Yb-Al-codoped high silica glasses

    International Nuclear Information System (INIS)

    Qiao Yanbo; Wen Lei; Wu Botao; Ren Jinjun; Chen Danping; Qiu Jianrong

    2008-01-01

    Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm 2 , respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers

  20. Effect of grain size on tensile stress and ductility in Al99.99

    International Nuclear Information System (INIS)

    Kovacs-Csetenyi, E.; Horvath, M.; Chinh, N.Q.; Kovacs, I.

    1998-01-01

    The effect of recrystallized grain size on the tensile stress and ductility of 99.99% purity aluminium was investigated at room temperature. It was proved that the grain size dependence of flow stress follows a modified Hall-Petch equation with coefficients depending linearly on ε 1/2 up to the stability limit. The uniform strain can also be described by a linear dependence on d -1/2 according to which the uniform elongation increases with increasing grain size. The post-uniform elongation changes inversely to that of the uniform one accompanied by the decrease of the strain rate sensitivity. (orig.)

  1. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wan Xiaojia; Wang Xiaoliang; Xiao Hongling; Feng Chun; Jiang Lijuan; Qu Shenqi; Wang Zhanguo; Hou Xun

    2013-01-01

    Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. (semiconductor devices)

  2. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  3. First-principle Calculations of Mechanical Properties of Al2Cu, Al2CuMg and MgZn2 Intermetallics in High Strength Aluminum Alloys

    Directory of Open Access Journals (Sweden)

    LIAO Fei

    2016-12-01

    Full Text Available Structural stabilities, mechanical properties and electronic structures of Al2Cu, Al2CuMg and MgZn2 intermetallics in Al-Zn-Mg-Cu aluminum alloys were determined from the first-principle calculations by VASP based on the density functional theory. The results show that the cohesive energy (Ecoh decreases in the order MgZn2 > Al2CuMg > Al2Cu, whereas the formation enthalpy (ΔH decreases in the order MgZn2 > Al2Cu > Al2CuMg. Al2Cu can act as a strengthening phase for its ductile and high Young's modulus. The Al2CuMg phase exhibits elastic anisotropy and may act as a crack initiation point. MgZn2 has good plasticity and low melting point, which is the main strengthening phase in the Al-Zn-Mg-Cu aluminum alloys. Metallic bonding mode coexists with a fractional ionic interaction in Al2Cu, Al2CuMg and MgZn2, and that improves the structural stability. In order to improve the alloys' performance further, the generation of MgZn2 phase should be promoted by increasing Zn content while Mg and Cu contents are decreased properly.

  4. Microstructure and High Temperature Plastic Deformation Behavior of Al-12Si Based Alloy Fabricated by an Electromagnetic Casting and Stirring Process

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Kyung-Soo; Roh, Heung-Ryeol; Kim, Mok-Soon [Inha University, Incheon (Korea, Republic of); Kim, Jong-Ho; Park, Joon-Pyo [Research Institute of Industrial Science and Technology, Pohang (Korea, Republic of)

    2017-06-15

    An as-received EMC/S (electromagnetic casting and stirring)-processed Al-12Si based alloy billet was homogenized to examine its microstructure and high temperature plastic deformation behavior, using compressive tests over the temperature range from 623 to 743 K and a strain rate range from 1.0×10{sup -3} to 1.0×10{sup 0}s{sup -1}. The results were compared with samples processed by the direct chill casting (DC) method. The fraction of equiaxed structure for the as-received EMC/S billet(41%) was much higher than that of the as-received DC billet(6 %). All true stress – true strain curves acquired from the compressive tests exhibited a peak stress at the initial stage of plastic deformation. Flow stress showed a steady state region after the appearance of peak stress with increasing strain. The peak stress decreased with increasing temperature at a given strain rate and a decreasing strain rate at a given temperature. A constitutive equation was made for each alloy, which could be used to predict the peak stress. A recrystallized grain structure was observed in all the deformed specimens, indicating that dynamic recrystallization is the predominant mechanism during high temperature plastic deformation of both the homogenized EMC/S and DC-processed Al-12Si based alloys.

  5. Derivation of Apollo 14 High-Al Basalts at Discrete Times: Rb-Sr Isotopic Constraints

    Science.gov (United States)

    Hui. Hejiu; Neal, Clive, R.; Shih, Chi-Yu; Nyquist, Laurence E.

    2012-01-01

    Pristine Apollo 14 (A-14) high-Al basalts represent the oldest volcanic deposits returned from the Moon [1,2] and are relatively enriched in Al2O3 (>11 wt%) compared to other mare basalts (7-11 wt%). Literature Rb-Sr isotopic data suggest there are at least three different eruption episodes for the A-14 high-Al basalts spanning the age range approx.4.3 Ga to approx.3.95 Ga [1,3]. Therefore, the high-Al basalts may record lunar mantle evolution between the formation of lunar crust (approx.4.4 Ga) and the main basin-filling mare volcanism (groups [5,6], and then regrouped into three with a possible fourth comprising 14072 based on the whole-rock incompatible trace element (ITE) ratios and Rb-Sr radiometric ages [7]. However, Rb-Sr ages of these basalts from different laboratories may not be consistent with each other because of the use of different 87Rb decay constants [8] and different isochron derivation methods over the last four decades. This study involved a literature search for Rb-Sr isotopic data previously reported for the high-Al basalts. With the re-calculated Rb-Sr radiometric ages, eruption episodes of A-14 high-Al basalts were determined, and their petrogenesis was investigated in light of the "new" Rb-Sr isotopic data and published trace element abundances of these basalts.

  6. Adolescents' sleep in low-stress and high-stress (exam) times: a prospective quasi-experiment

    NARCIS (Netherlands)

    Dewald, J.F.; Meijer, A.M.; Oort, F.J.; Kerkhof, G.A.; Bögels, S.M.

    2014-01-01

    This prospective quasi-experiment (N=175; mean age: 15.14 years) investigates changes in adolescents' sleep from low-stress (regular school week) to high-stress times (exam week) and examines the (moderating) role of chronic sleep reduction, baseline stress, and gender. Sleep was monitored over

  7. Adolescents' Sleep in Low-Stress and High-Stress (Exam) Times: A Prospective Quasi-Experiment

    NARCIS (Netherlands)

    Dewald, Julia F.; Meijer, Anne Marie; Oort, Frans J.; Kerkhof, Gerard A.; Bögels, Susan M.

    2014-01-01

    This prospective quasi-experiment (N = 175; mean age = 15.14 years) investigates changes in adolescents' sleep from low-stress (regular school week) to high-stress times (exam week), and examines the (moderating) role of chronic sleep reduction, baseline stress, and gender. Sleep was monitored over

  8. Cast Aluminum Alloys for High Temperature Applications Using Nanoparticles Al2O3 and Al3-X Compounds (X = Ti, V, Zr)

    Science.gov (United States)

    Lee, Jonathan A.

    2009-01-01

    In this paper, the effect of nanoparticles Al2O3 and Al3-X compounds (X = Ti, V, Zr) on the improvement of mechanical properties of aluminum alloys for elevated temperature applications is presented. These nanoparticles were selected based on their low cost, chemical stability and low diffusions rates in aluminum at high temperatures. The strengthening mechanism at high temperature for aluminum alloy is based on the mechanical blocking of dislocation movements by these nanoparticles. For Al2O3 nanoparticles, the test samples were prepared from special Al2O3 preforms, which were produced using ceramic injection molding process and then pressure infiltrated by molten aluminum. In another method, Al2O3 nanoparticles can also be homogeneously mixed with fine aluminum powder and consolidated into test samples through hot pressing and sintering. With the Al3-X nanoparticles, the test samples are produced as precipitates from in-situ reactions with molten aluminum using conventional permanent mold or die casting techniques. It is found that cast aluminum alloy using nanoparticles Al3-X is the most cost effective method to produce high strength aluminum alloys for high temperature applications in comparison to nanoparticles Al2O3. Furthermore, significant mechanical properties retention in high temperature environment could be achieved with Al3-X nanoparticles, resulting in tensile strength of nearly 3 times higher than most 300- series conventional cast aluminum alloys tested at 600 F.

  9. Evaluation of the interfacial shear strength and residual stress of TiAlN coating on ZIRLO™ fuel cladding using a modified shear-lag model approach

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Y., E-mail: troy.liu@manchester.ac.uk [Materials Performance Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Bhamji, I., E-mail: imran.bhamji@manchester.ac.uk [Materials Performance Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Withers, P.J., E-mail: p.j.withers@manchester.ac.uk [Materials Performance Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Wolfe, D.E., E-mail: dew125@arl.psu.edu [The Pennsylvania State University, University Park, State College, PA 16801 (United States); Motta, A.T., E-mail: atmnuc@engr.psu.edu [The Pennsylvania State University, University Park, State College, PA 16801 (United States); Preuss, M., E-mail: michael.preuss@manchester.ac.uk [Materials Performance Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom)

    2015-11-15

    This paper investigates the residual stresses and interfacial shear strength of a TiAlN coating on Zr–Nb–Sn–Fe alloy (ZIRLO™) substrate designed to improve corrosion resistance of fuel cladding used in water-cooled nuclear reactors, both during normal and exceptional conditions, e.g. a loss of coolant event (LOCA). The distribution and maximum value of the interfacial shear strength has been estimated using a modified shear-lag model. The parameters critical to this analysis were determined experimentally. From these input parameters the interfacial shear strength between the TiAlN coating and ZIRLO™ substrate was inferred to be around 120 MPa. It is worth noting that the apparent strength of the coating is high (∼3.4 GPa). However, this is predominantly due to the large compressive residuals stress (3 GPa in compression), which must be overcome for the coating to fail in tension, which happens at a load just 150 MPa in excess of this.

  10. Measurements of internal stresses in bond coating using high energy x-rays from synchrotron radiation source

    CERN Document Server

    Suzuki, K; Akiniwa, Y; Nishio, K; Kawamura, M; Okado, H

    2002-01-01

    Thermal barrier coating (TBC) techniques enable high temperature combustion of turbines made of Ni-base alloy. TBC is made of zirconia top coating on NiCoCrAlY bond coating. The internal stresses in the bond coating play essential role in the delamination or fracture of TBC in service. With the X-rays from laboratory equipments, it is impossible to measure nondestructively the internal stress in the bond coating under the top coating. synchrotron radiations with a high energy and high brightness have a large penetration depth as compared with laboratory X-rays. Using the high energy X-rays from the synchrotron radiation, it is possible to measure the internal stress in the bond coating through the top coating. In this study, the furnace, which can heat a specimen to 1473 K, was developed for the stress measurement of the thermal barrier coatings. The internal stresses in the bond coating were measured at the room temperature, 773 K, 1073 K and 1373 K by using the 311 diffraction from Ni sub 3 Al with about 73...

  11. Lattice stabilities, mechanical and thermodynamic properties of Al3Tm and Al3Lu intermetallics under high pressure from first-principles calculations

    Science.gov (United States)

    Xu-Dong, Zhang; Wei, Jiang

    2016-02-01

    The effects of high pressure on lattice stability, mechanical and thermodynamic properties of L12 structure Al3Tm and Al3Lu are studied by first-principles calculations within the VASP code. The phonon dispersion curves and density of phonon states are calculated by using the PHONONPY code. Our results agree well with the available experimental and theoretical values. The vibrational properties indicate that Al3Tm and Al3Lu keep their dynamical stabilities in L12 structure up to 100 GPa. The elastic properties and Debye temperatures for Al3Tm and Al3Lu increase with the increase of pressure. The mechanical anisotropic properties are discussed by using anisotropic indices AG, AU, AZ, and the three-dimensional (3D) curved surface of Young’s modulus. The calculated results show that Al3Tm and Al3Lu are both isotropic at 0 GPa and anisotropic under high pressure. In the present work, the sound velocities in different directions for Al3Tm and Al3Lu are also predicted under high pressure. We also calculate the thermodynamic properties and provide the relationships between thermal parameters and temperature/pressure. These results can provide theoretical support for further experimental work and industrial applications. Project supported by the Scientific Technology Plan of the Educational Department of Liaoning Province and Liaoning Innovative Research Team in University, China (Grant No. LT2014004) and the Program for the Young Teacher Cultivation Fund of Shenyang University of Technology, China (Grant No. 005612).

  12. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    Science.gov (United States)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  13. Highly Efficient Four-Wave Mixing in an AlGaAs-On-Insulator (AlGaAsOI) Nano-Waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Ottaviano, Luisa; Semenova, Elizaveta

    2015-01-01

    We propose an AlGaAs-on-insulator platform for nonlinear integrated photonics. We demonstrate highly efficient four-wave mixing in a 3-mm long AlGaAs-on-insulator nanowaveguide. A conversion efficiency of -21.1 dB is obtained with only a 45-mW pump......We propose an AlGaAs-on-insulator platform for nonlinear integrated photonics. We demonstrate highly efficient four-wave mixing in a 3-mm long AlGaAs-on-insulator nanowaveguide. A conversion efficiency of -21.1 dB is obtained with only a 45-mW pump...

  14. High temperature mechanical behaviour of glass-ceramics in the YSiAlON and ErSiAlON systems

    Energy Technology Data Exchange (ETDEWEB)

    Bondanini, A.; Massouras, G.; Besson, J.L. [ENSCI, Limoges (France). SPCTS

    2002-07-01

    The high temperature mechanical behaviour of oxynitride glass-ceramics in the YSiAlON and ErSiAlON systems was studied in the 950-1150 C temperature range under compressive stresses ranging from 20 to 100 MPa. The parent glass had a composition of 35 Y(or Er)-45 Si-20 Al-83 O-17 N in equivalent percent. Starting from these glasses, glass-ceramics were prepared using a two stage heat treatment: nucleation at the optimum nucleation temperature followed by crystal growth at 1050, 1150 or 1250 C. The two parent glasses had similar viscosities, with that of the Er-glass being slightly less than that of the Y-glass. After the devitrification treatment at 1050 C, B-phase (M{sub 2}SiAlO{sub 5}N) was the only crystalline phase formed in both systems. The creep behaviour was similar for the yttrium and the erbium materials. It was characterised by a long transient stage, due to the viscoelastic response of the residual glass, with recovered strain after unloading decreasing as loading time increased. The creep resistance was compared to that of the parent glasses in terms of apparent viscosity. The crystallisation of 75% of the glass resulted in an increase in viscosity such that a temperature some 100 C higher showed the same viscosity value. After heat treatment at 1150 C, the phase assemblage in the yttrium material changed with the formation of wollastonite and partial conversion of B-phase into Iw-phase. The apparent viscosity was 2 orders of magnitude higher than that of the samples heat treated at 1050 C and no strain recovery was observed upon unloading. In contrast, the erbium materials retained the same microstructure as after the heat treatment at 1050{sup b}C and there was no difference in the creep behaviour of the samples heat treated at 1050 or 1150 C. After a crystallisation treatment at 1250 C of the yttrium parent glass, the glass-ceramic consisted of yttrium aluminium garnet, N-apatite and {beta}-Y{sub 2}Si{sub 2}O{sub 7} and showed excellent creep

  15. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

    Science.gov (United States)

    Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2018-04-24

    The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

  16. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

    Directory of Open Access Journals (Sweden)

    Yan Dong

    2018-04-01

    Full Text Available The AlInN/GaN high-electron-mobility-transistor (HEMT indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al0.83In0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG density and a thinner barrier layer in Al0.83In0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

  17. High-pressure polymorphism as a step towards high density structures of LiAlH{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Xiaoli; Duan, Defang; Li, Xin; Li, Fangfei; Huang, Yanping; Wu, Gang; Liu, Yunxian; Zhou, Qiang; Liu, Bingbing; Cui, Tian, E-mail: cuitian@jlu.edu.cn [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China)

    2015-07-27

    Two high density structures β- and γ-LiAlH{sub 4} are detected in LiAlH{sub 4}, a promising hydrogen storage compound, upon compression in diamond anvil cells, investigated with synchrotron X-ray diffraction and first-principle calculations. The joint of the experimental and theoretical results has confirmed the sequence of the pressure-induced structural phase transitions from α-LiAlH{sub 4} (space group P2{sub 1}/c) to β-LiAlH{sub 4} (P2{sub 1}/c-6C symmetry), and then to γ-LiAlH{sub 4} (space group Pnc2), which are not reported in previous literatures. At the α to β transition point for LiAlH{sub 4}, the estimated difference in cell volume is about 20%, while the transformation from β to γ phase is with a volume drop smaller than 1%. The α to β phase transition is accompanied by the local structure change from a AlH{sub 4} tetrahedron into a AlH{sub 6} octahedron, which contributes to a large volume collapse.

  18. In-situ studies of the TGO growth stresses and the martensitic transformation in the B2 phase in commercial Pt-modified NiAl and NiCoCrAlY bond coat alloys

    Energy Technology Data Exchange (ETDEWEB)

    Hovis, D.; Hu, L.; Reddy, A.; Heuer, A.H. [Dept. of Materials Science and Engineering, Case Western Reserve Univ., Cleveland, OH (United States); Paulikas, A.P.; Veal, B.W. [Materials Science Div., Argonne National Lab., Argonne, IL (United States)

    2007-12-15

    Oxide growth stresses were measured in situ at 1100 C on commercial Pt-modified NiAl and NiCoCrAlY bond coat alloys using synchrotron X-rays. Measurements were taken on samples that had no preoxidation, as well as on samples that had experienced 24 one-hour thermal exposures at 1150 C, a condition known to induce rumpling in the Pt-modified NiAl alloy, but not in the NiCoCrAlY alloy. The NiCoCrAlY alloy showed continuous stress relaxation under all conditions, whereas the Pt-modified NiAl alloys would typically stabilize at a fixed (often non-zero) stress suggesting a higher creep strength in the 'Thermally Grown Oxide' on the latter alloy, though the precise behavior was dependent on initial surface preparation. The formation of martensite in the Pt-modified NiAl alloys was also observed upon cooling and occurred at temperatures below 200 C for all of the samples observed. Based on existing models, this M{sub s} temperature is too low to account for the rumpling observed in these alloys. (orig.)

  19. Effect of high power ultrasound on mechanical properties of Al-Si alloys

    Science.gov (United States)

    Srivastava, N.; Gupta, R.; Chaudhari, G. P.

    2018-03-01

    Effect of high power ultrasonic treatment on the solidification microstructures of Al-Si alloys containing varying content of solute Si (1, 2, 3 and 5 wt %) is investigated. Large variation in microstructures is seen and refinement of primary α-Al grains is observed. It is observed that increasing the weight percentage of solute along with ultrasonic treatment resulted in finer primary phase. By increasing the solute content from 1% to 5 wt.% in Al-Si alloys, hardness increased by about 38% without and 48% with ultrasonic treatment. Tensile strength of the alloys with ultrasonic treatment is higher as compared to those without ultrasonic treated.

  20. Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Jirásek, Vít; Vanko, G.; Dzuba, J.; Kromka, Alexander

    2016-01-01

    Roč. 106, Sep (2016), s. 305-312 ISSN 0264-1275 R&D Projects: GA ČR(CZ) GP14-16549P Grant - others:AV ČR(CZ) SAV-16-02 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : thermally induced stress * Raman spectroscopy * polycrystalline diamond film * GaN Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.364, year: 2016

  1. Metallographic assessment of Al-12Si high-pressure die casting escalator steps.

    Science.gov (United States)

    Vander Voort, George Frederic; Suárez-Peña, Beatriz; Asensio-Lozano, Juan

    2014-10-01

    A microstructural characterization study was performed on high-pressure die cast specimens extracted from escalator steps manufactured from an Al-12 wt.% Si alloy designed for structural applications. Black and white, color light optical imaging and scanning electron microscopy techniques were used to conduct the microstructural analysis. Most regions in the samples studied contained globular-rosette primary α-Al grains surrounded by an Al-Si eutectic aggregate, while primary dendritic α-Al grains were present in the surface layer. This dendritic microstructure was observed in the regions where the melt did not impinge directly on the die surface during cavity filling. Consequently, microstructures in the surface layer were nonuniform. Utilizing physical metallurgy principles, these results were analyzed in terms of the applied pressure and filling velocity during high-pressure die casting. The effects of these parameters on solidification at different locations of the casting are discussed.

  2. CNTs/Al5083 Composites of High-performance Uniform and Dispersion Fabricated by High-energy Ball-milling

    Directory of Open Access Journals (Sweden)

    GUO Li

    2017-11-01

    Full Text Available Carbon nanotubes (CNTs, mass fraction of 0%-2% reinforced Al5083 composites were fabricated by horizontal high-energy ball milling. The effects of ball milling time and CNTs contents on the properties of composite materials were studied. The micro morphology of CNTs/Al5083 composites was characterized by scanning electron microscopy(SEM and transmission electron microscopy(TEM, the tensile strength and microhardness of the composites were tested. The results indicate that after high-energy ball milling for 1.5h, the carbon nanotubes are dispersed homogeneously in the Al5083 matrix, and good interfacial bonding strength between CNTs and Al5083 is obtained at the addition of 1.5%CNTs. Under these conditions, the tensile strength and microhardness of CNTs/Al5083 composites are 188.8MPa and 136HV, respectively. Compared to Al5083 matrix without CNTs reinforcement, tensile strength and microhardness of CNTs/Al5083 composites are increased by 32.2% and 36%, respectively.

  3. Bremsstrahlung spectra for Al, Cs, and Au atoms in high-temperature, high-density plasmas

    International Nuclear Information System (INIS)

    Kim, L.; Pratt, R.H.; Tseng, H.K.

    1985-01-01

    Results are presented from a numerical calculation for the bremsstrahlung spectrum and Gaunt factors of Al, Cs, and Au atoms in high-temperature (-T), high-density (-rho) plasmas. Plasma temperatures kT = 0.1 and 1.0 keV and plasma densities rho = rho 0 (the normal solid density) and rho = 100rho 0 are considered. This allows us to determine the generality and identify the origins of features which we had previously identified in calculations for Cs. We also now present results for the total energy loss of an electron in such a plasma. We use a relativistic multipole code which treats the bremsstrahlung process as a single-electron transition in a static screened central potential. We take for the static potential corresponding to an atom in a hot dense plasma the finite-temperature, finite-density Thomas-Fermi model. This approach corresponds to an average atom in local thermodynamic equilibrium. In comparison to isolated-neutral-atom results we observe general suppression of cross sections and a particular suppression in the tip region of the spectrum. Within this model, both superscreening and shape resonances are found in the circumstances of extreme density. At more normal densities and except for the soft-photon end, the spectrum at these energies for an atom in a hot plasma (characterized by an average degree of ionization) can be well represented by the spectrum of the corresponding isolated ion, which has a similar potential shape at the distances which characterize the process

  4. Simulation of thermal stresses in SiC-Al2O3 composite tritium penetration barrier by finite-element analysis

    International Nuclear Information System (INIS)

    Liu, Hongbing; Tao, Jie; Gautreau, Yoann; Zhang, Pingze; Xu, Jiang

    2009-01-01

    Tritium penetration barrier (TPB) composed of Al 2 O 3 and SiC on 316L stainless steel was proposed to improve the tritium penetration resistance of the substrate in this work. At the same time, the concept of functionally graded materials (FGM) was applied to manage to decrease residual stresses between Al 2 O 3 and 316L stainless steel substrate due to the mismatch of their thermal expansion coefficients. The effects of system architecture on the residual stresses developed in the composite coatings were investigated numerically by means of finite-element analysis (FEA). Modeling results showed that the presence of the graded properties and the compositions within the coating did reduce the stress discontinuity at the interfaces between the coating and the substrate. Also, the magnitudes of the residual stresses on the coating surface and at the coating/substrate interface were dependent on the Al 2 O 3 and SiC coating thickness.

  5. Una aproximación psicosocial al estrés escolar A psychosocial approximaton to school stress

    Directory of Open Access Journals (Sweden)

    Esther Susana Martínez Díaz

    2007-12-01

    Full Text Available El presente artículo presenta el estrés como un fenómeno real en la vida escolar, a partir de un análisis reflexivo fruto de seis estudios llevados a cabo en la Facultad de Psicología de la Universidad de La Sabana, en los niveles de educación básica, media y superior. Los resultados de los estudios, como las casuísticas relacionadas con el estrés sufrido por estudiantes de todos los niveles de educación, evidencian que existen factores psicosociales generadores de estrés, los cuales están asociados a la pérdida de uno de los padres de familia, a la enfermedad de un hermano o un familiar, al exceso de tareas, al bajo rendimiento académico, a la presión perturbadora, a la presentación de exámenes, entre otros.This paper presents stress as a real phenomenon in school life and is the result of a reflective analysis based on six studies carried out at the levels of basic, middle and higher education carried out by the Faculty of Psychology at La Sabana University. The results of the studies, as well as the casuistics related to the stress suffered by students at all levels of education, provide evidence of the existence of stress generating factors which are related to loss of a parent, disease of a sibling or a relative, excess homework, low academic performance, disturbing pressure, sitting exams, among others.

  6. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    Energy Technology Data Exchange (ETDEWEB)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (λ = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  7. Stress- and Magnetic Field-Induced Martensitic Transformation at Cryogenic Temperatures in Fe-Mn-Al-Ni Shape Memory Alloys

    Science.gov (United States)

    Xia, Ji; Xu, Xiao; Miyake, Atsushi; Kimura, Yuta; Omori, Toshihiro; Tokunaga, Masashi; Kainuma, Ryosuke

    2017-12-01

    Stress-induced and magnetic-field-induced martensitic transformation behaviors at low temperatures were investigated for Fe-Mn-Al-Ni alloys. The magnetic-field-induced reverse martensitic transformation was directly observed by in situ optical microscopy. Magnetization measurements under pulsed magnetic fields up to 50 T were carried out at temperatures between 4.2 and 125 K on a single-crystal sample; full magnetic-field-induced reverse martensitic transformation was confirmed at all tested temperatures. Compression tests from 10 to 100 K were conducted on a single-crystal sample; full shape recovery was obtained at all tested temperatures. It was found that the temperature dependence of both the critical stress and critical magnetic field is small and that the transformation hysteresis is less sensitive to temperature even at cryogenic temperatures. The temperature dependence of entropy change during martensitic transformation up to 100 K was then derived using the Clausius-Clapeyron relation with critical stresses and magnetic fields.

  8. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  9. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  10. Developing prospects of NiAlMn high temperature shape memory alloy

    International Nuclear Information System (INIS)

    Zou Min

    1999-01-01

    The reason and information on high temperature shape memory alloy research are introduced briefly Also, referring to some experimental reports on NiAlMn high temperature shape memory alloy, it is pointed out that ductility and memory property of this alloy can be improved by adapting proper composition and procedure to control its microstructure. Meanwhile, the engineering details must be considered when NiAlMn high temperature shape memory alloy being developed so as to resolve the problems of its practical use

  11. High-resolution axial MR imaging of tibial stress injuries

    Directory of Open Access Journals (Sweden)

    Mammoto Takeo

    2012-05-01

    Full Text Available Abstract Purpose To evaluate the relative involvement of tibial stress injuries using high-resolution axial MR imaging and the correlation with MR and radiographic images. Methods A total of 33 patients with exercise-induced tibial pain were evaluated. All patients underwent radiograph and high-resolution axial MR imaging. Radiographs were taken at initial presentation and 4 weeks later. High-resolution MR axial images were obtained using a microscopy surface coil with 60 × 60 mm field of view on a 1.5T MR unit. All images were evaluated for abnormal signals of the periosteum, cortex and bone marrow. Results Nineteen patients showed no periosteal reaction at initial and follow-up radiographs. MR imaging showed abnormal signals in the periosteal tissue and partially abnormal signals in the bone marrow. In 7 patients, periosteal reaction was not seen at initial radiograph, but was detected at follow-up radiograph. MR imaging showed abnormal signals in the periosteal tissue and entire bone marrow. Abnormal signals in the cortex were found in 6 patients. The remaining 7 showed periosteal reactions at initial radiograph. MR imaging showed abnormal signals in the periosteal tissue in 6 patients. Abnormal signals were seen in the partial and entire bone marrow in 4 and 3 patients, respectively. Conclusions Bone marrow abnormalities in high-resolution axial MR imaging were related to periosteal reactions at follow-up radiograph. Bone marrow abnormalities might predict later periosteal reactions, suggesting shin splints or stress fractures. High-resolution axial MR imaging is useful in early discrimination of tibial stress injuries.

  12. High-resolution axial MR imaging of tibial stress injuries

    Science.gov (United States)

    2012-01-01

    Purpose To evaluate the relative involvement of tibial stress injuries using high-resolution axial MR imaging and the correlation with MR and radiographic images. Methods A total of 33 patients with exercise-induced tibial pain were evaluated. All patients underwent radiograph and high-resolution axial MR imaging. Radiographs were taken at initial presentation and 4 weeks later. High-resolution MR axial images were obtained using a microscopy surface coil with 60 × 60 mm field of view on a 1.5T MR unit. All images were evaluated for abnormal signals of the periosteum, cortex and bone marrow. Results Nineteen patients showed no periosteal reaction at initial and follow-up radiographs. MR imaging showed abnormal signals in the periosteal tissue and partially abnormal signals in the bone marrow. In 7 patients, periosteal reaction was not seen at initial radiograph, but was detected at follow-up radiograph. MR imaging showed abnormal signals in the periosteal tissue and entire bone marrow. Abnormal signals in the cortex were found in 6 patients. The remaining 7 showed periosteal reactions at initial radiograph. MR imaging showed abnormal signals in the periosteal tissue in 6 patients. Abnormal signals were seen in the partial and entire bone marrow in 4 and 3 patients, respectively. Conclusions Bone marrow abnormalities in high-resolution axial MR imaging were related to periosteal reactions at follow-up radiograph. Bone marrow abnormalities might predict later periosteal reactions, suggesting shin splints or stress fractures. High-resolution axial MR imaging is useful in early discrimination of tibial stress injuries. PMID:22574840

  13. Adolescents' sleep in low-stress and high-stress (exam) times: a prospective quasi-experiment.

    Science.gov (United States)

    Dewald, Julia F; Meijer, Anne Marie; Oort, Frans J; Kerkhof, Gerard A; Bögels, Susan M

    2014-01-01

    This prospective quasi-experiment (N = 175; mean age = 15.14 years) investigates changes in adolescents' sleep from low-stress (regular school week) to high-stress times (exam week), and examines the (moderating) role of chronic sleep reduction, baseline stress, and gender. Sleep was monitored over three consecutive weeks using actigraphy. Adolescents' sleep was more fragmented during the high-stress time than during the low-stress time, meaning that individuals slept more restless during stressful times. However, sleep efficiency, total sleep time, and sleep onset latency remained stable throughout the three consecutive weeks. High chronic sleep reduction was related to later bedtimes, later sleep start times, later sleep end times, later getting up times, and more time spent in bed. Furthermore, low chronic sleep reduction and high baseline stress levels were related to more fragmented sleep during stressful times. This study shows that stressful times can have negative effects on adolescents' sleep fragmentation, especially for adolescents with low chronic sleep reduction or high baseline stress levels.

  14. Bioerosion structures in high-salinity marine environments: Evidence from the Al-Khafji coastline, Saudi Arabia

    Science.gov (United States)

    El-Sorogy, Abdelbaset S.; Alharbi, Talal; Richiano, Sebastián

    2018-05-01

    Salinity is one the major stress factors that controls the biotic activities in marine environments. In general, the mixture with fresh-water has been mention as a great stress factor, but the opposite, i.e. high-salinity conditions, is less developed in the ichnological literature. Along the Al-Khafji coastline, Saudi Arabia, hard substrates (constituted by gastropods, bivalves and coral skeletons) contain diverse and abundant bioerosion traces and associated encrusters. Field and laboratory observations allowed the recognition of eight ichnospecies belong to the ichnogenera Gastrochaenolites, Entobia, Oichnus, Caulostrepsis and Trypanites, which can be attributed to various activities produced by bivalves, sponges, gastropods and annelids. The borings demonstrate two notable ichnological boring assemblages, namely, Entobia-dominated and Gastrochaenolites-dominated assemblages. The highly diversified bioerosion and encrustation in the studied hard organic substrate indicate a long exposition period of organic substrate with slow to moderate rate of deposition in a restricted (high-salinity) marine environment. This bioerosion study shows that high-salinity, at least for the study area, is not an important controlling factor for ichnology.

  15. Stress corrosion test of Al- Zn- Mg alloys with and without Nb

    International Nuclear Information System (INIS)

    Pereira, E.C.; Garlipp, W.

    1982-01-01

    Two aluminium alloys 1 and 2 with the respectives compositions 6,10 wt% Zn; 1,58 wt% Mg; 0,24 wt% Cu and 6,25 wt% Zn; 2,03 wt% Mg; 0,24 wt% Cu; 0,078 wt% Nb, was cast, annealed, extruded and cold rolled to 10% of the initial area. Samples was made for tensile testing and stress corrosion cracking in accord with the recommended standard test. After quench from 460 0 C they was preaged at 100 0 C, 6 hours and aged again at 160 0 C in different times. The tests revealed better properties for the alloys 2. (Author) [pt

  16. Study of Cu-Al-Ni-Ga as high-temperature shape memory alloys

    Science.gov (United States)

    Zhang, Xin; Wang, Qian; Zhao, Xu; Wang, Fang; Liu, Qingsuo

    2018-03-01

    The effect of Ga element on the microstructure, mechanical properties and shape memory effect of Cu-13.0Al-4.0Ni- xGa (wt%) high-temperature shape memory alloy was investigated by optical microscopy, SEM, XRD and compression test. The microstructure observation results showed that the Cu-13.0Al-4.0Ni- xGa ( x = 0.5 and 1.0) alloys displayed dual-phase morphology which consisted of 18R martensite and (Al, Ga)Cu phase, and their grain size was about several hundred microns, smaller than that of Cu-13.0Al-4.0Ni alloy. The compression test results proved that the mechanical properties of Cu-13.0Al-4.0Ni- xGa alloys were improved by addition of Ga element owing to the grain refinement and solid solution strengthening, and the compressive fracture strains were 11.5% for x = 0.5 and 14.9% for x = 1.0, respectively. When the pre-strain was 8%, the shape memory effect of 4.2 and 4.6% were obtained for Cu-13.0Al-4.0Ni-0.5 Ga and Cu-13.0Al-4.0Ni-1.0 Ga alloys after being heated to 400 °C for 1 min.

  17. Structure of high alumina content Al2O3-SiO2 composition glasses.

    Science.gov (United States)

    Weber, Richard; Sen, Sabyasachi; Youngman, Randall E; Hart, Robert T; Benmore, Chris J

    2008-12-25

    The structure of binary aluminosilicate glasses containing 60-67 mol % Al2O3 were investigated using high-resolution 27Al NMR and X-ray and neutron diffraction. The glasses were made by aerodynamic levitation of molten oxides. The 67% alumina composition required a cooling rate of approximately 1600 degrees C s(1-) to form glass from submillimeter sized samples. NMR results show that the glasses contain aluminum in 4-, 5-, and 6-fold coordination in the approximate ratio 4:5:1. The average Al coordination increases from 4.57 to 4.73 as the fraction of octahedral Al increases with alumina content. The diffraction results on the 67% composition are consistent with a disordered Al framework with Al ions in a range of coordination environments that are substantially different from those found in the equilibrium crystalline phases. Analysis of the neutron and X-ray structure factors yields an average bond angle of 125 +/- 4 degrees between an Al ion and the adjoining cation via a bridging oxygen. We propose that the structure of the glass is a "transition state" between the alumina-rich liquid and the equilibrium mullite phase that are dominated by 4- and 6-coordinated aluminum ions, respectively.

  18. High-pressure luminescence spectroscopy of EuAl2O4 phosphor

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Grinberg, M.; Turos-Matysiak, R.; Kuklinski, B.

    2007-01-01

    EuAl 2 O 4 powder phosphor was prepared by solid-state reaction of EuO and Al 2 O 3 oxides in vacuum. The influence of conditions of preparation on spectral lineshape of Eu 2+ emission was analyzed. It was found that the fluorescence spectra of vacuum-prepared EuAl 2 O 4 samples at 300 K present the superposition of three bands peaked at 430, 500 and 528 nm, corresponding to the 4f 6 5d 1 →4f 7 ( 8 S 7/2 ) transition of Eu 2+ ions in the different sites of EuAl 2 O 4 lattice. The luminescence of Eu 2+ centers in EuAl 2 O 4 host was also studied using the high-pressure spectroscopy up to 67 kbar. It was found that the bright green-yellow fluorescence of EuAl 2 O 4 at 300 K in the band peaked at 520-530nm range can be presented by superposition of two Gaussian sub-bands. The different pressure shifts -23 and -27cm -1 /kbar for two sub-bands were found. Such a structure of the emission spectrum was attributed to the existence of two different Eu 2+ centers in the Eu II 2+ sites of EuAl 2 O 4 lattice with higher coordination number

  19. Preparation of highly oriented Al:ZnO and Cu/Al:ZnO thin films by sol-gel method and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R. [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan); Ravi, G., E-mail: gravicrc@gmail.com [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India)

    2015-11-15

    Highly oriented thin films of Al doped ZnO (Al:ZnO) and Cu co-doped Al:ZnO (Cu/Al:ZnO) thin films were successfully deposited by sol–gel spin coating on glass substrates. The deposited films were characterized using X-ray diffraction analysis and found to exhibit hexagonal wurtzite structure with c-axis orientation. SEM images revealed that hexagonal rod shaped morphologies were grown perpendicular to the substrate surface due to repeated deposition process. High transmittance values were observed for pure ZnO compared to Al:ZnO and Cu/Al:ZnO thin films. The band gap widening is caused by the increase of carrier concentration, which is believed to be due to Burstein-Moss effect due to Al and Cu doping. PL spectra of Cu/Al:ZnO thin films indicate that the UV emission peaks slightly shifted towards lower energy side. XPS study was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O thin films to analyze the binding energy of Al, Cu, Zn and O. Magnetic measurement studies exhibited ferromagnetic behavior at room temperature, which may be due to the increase in copper concentration in the doped films. The ferromagnetic behavior can be understood from the exchange coupling between localized ‘d’ spin of Cu ion mediated by free delocalized carriers. - Highlights: • High quality of Al:ZnO and Cu co-doped Al:ZnO thin films were fabricated by sol–gel method. • The XRD analyses revealed that the deposited thin films have hexagonal wurtzite structure. • XPS was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O films to analyze the binding energy of Al, Cu, Zn and O. • SEM studies were made for Al:ZnO and Cu/Al:ZnO thin films. • RTFM was observed in Cu co-doped Al:ZnO thin films.

  20. High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

    International Nuclear Information System (INIS)

    Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan; Li, Cheng; Huang, Wei; Tang, Dingliang

    2015-01-01

    High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

  1. Stresses evolution at high temperature (200°C on the interface of thin films in magnetic components

    Directory of Open Access Journals (Sweden)

    Doumit Nicole

    2014-07-01

    Full Text Available In the field of electronics, the increase of operating temperatures is a major industrial and scientific challenge because it allows reducing mass and volume of components especially in the aeronautic domain. So minimizing our components reduce masses and the use of cooling systems. For that, the behaviours and interface stresses of our components (in particular magnetic inductors and transformers that are constituted of one magnetic layer (YIG or an alumina substrate (Al2O3 representing the substrate and a thin copper film are studied at high temperature (200°C. COMSOL Multiphysics is used to simulate our work and to validate our measurements results. In this paper, we will present stresses results according to the geometrical copper parameters necessary for the component fabrication. Results show that stresses increase with temperature and copper’s thickness while remaining always lower than 200MPa which is the rupture stress value.

  2. Influence of Al-W-B Recycled Composite Material on the Properties of High Performance Concrete

    Directory of Open Access Journals (Sweden)

    Baronins Janis

    2015-12-01

    Full Text Available The aim of this study is to obtain high performance boron containing material with sufficient carrying capacity with increased porosity and lower density at the same time. The influence of the different concentrations of Al-W-B powder on the properties of the fresh and hardened HPC was investigated. In the concrete mix design, the allite containing White Portland cement CEM I 52,5 R, granite stone, sand, microsilica, on polycarboxylates based super plasticizer and Al-W-B powder were used. As a source of boron composite material (CM, previously grinded powder containing boron-tungsten fiber and aluminium matrix (CM Al-W-B was used. Grinding was used for processing of CM Al-W-B powder.

  3. Net-shape forming and properties of high volume fraction SiCp/Al composites

    International Nuclear Information System (INIS)

    Ren Shubin; Qu Xuanhui; Guo Jia; He Xinbo; Qin Mingli; Shen Xiaoyu

    2009-01-01

    High performance SiCp/Al composites have been realized their net-shape forming by use of a novel process-ceramic injection molding (CIM) for the preparation of SiC preform and pressureless infiltration of aluminum alloys. The dimension precision of prepared SiCp/Al parts could reach about ±0.3%, and their properties could also better meet the requirement of electronic packaging on the materials. In this paper, the CIM process to fabricate SiC preform and the infiltration of SiC preform by Al alloys have been discussed in detail. Additionally, the properties of prepared SiCp/Al composites have also been given research and evaluation.

  4. High-pressure x-ray diffraction of icosahedral Zr-Al-Ni-Cu-Ag quasicrystals

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Saksl, Karel; Rasmussen, Helge Kildahl

    2001-01-01

    temperature using synchrotron radiation. The icosahedral quasicrystal structure is retained up to the highest hydrostatic pressure used (approximately 28 GPa) and is reversible after decompression. The bulk modulus at zero pressure and its pressure derivative of the icosahedral Zr-Al-Ni-Cu-Ag quasicrystal......The effect of pressure on the structural stability of icosahedral Zr-Al-Ni-Cu-Ag quasicrystals forming from a Zr65Al7.5Ni10Cu7.5Ag10 metallic glass with a supercooled liquid region of 44 K has been investigated by in situ high-pressure angle-dispersive x-ray powder diffraction at ambient......-Al-Ni-Cu-Ag quasicrystals induced by pressure....

  5. Processing simulated high-level liquid waste by heat treatment with addition of TiN and AlN or Al2O3

    International Nuclear Information System (INIS)

    Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

    1999-01-01

    The present study aims to decrease the melting temperature of the oxide phase by the addition of the mixture of TiN and AlN or Al 2 O 3 for reduction of the treatment temperature of super high temperature method. The addition of the mixture of TiN and AlN or Al 2 O 3 with the atomic ratio of Al to Ti of 1:9 caused the melting of both the alloy phase and oxide phase at 1673 K. The measured values of density and hardness for thus obtained oxide phase were same as those for the oxide phase obtained at 1873 K without Al. Thus, above mentioned method is achieved at 1673 K without degradation of the properties of the oxide phase as an waste. (author)

  6. Low-loss high-confinement waveguides and microring resonators in AlGaAs-on-insulator

    DEFF Research Database (Denmark)

    Ottaviano, Luisa; Pu, Minhao; Semenova, Elizaveta

    2016-01-01

    AlGaAs is a promising material for integrated nonlinearphotonics due to its intrinsic high nonlinearity. However,the challenging fabrication of deep etched AlGaAs devices makes it difficult to realize high-performance devices such as low-loss dispersion engineered waveguides and high quality...... microring resonators. Here, we report a process tomake high-quality AlGaAs-on-insulator (AlGaAsOI) waferswhere high confinement waveguides can be realized. Using optimized patterning processes, we fabricated AlGaAsOI waveguides with propagation losses as low as 1 dB/cmand microring resonators with quality...

  7. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  8. Nb-Based Nb-Al-Fe Alloys: Solidification Behavior and High-Temperature Phase Equilibria

    Science.gov (United States)

    Stein, Frank; Philips, Noah

    2018-03-01

    High-melting Nb-based alloys hold significant promise for the development of novel high-temperature materials for structural applications. In order to understand the effect of alloying elements Al and Fe, the Nb-rich part of the ternary Nb-Al-Fe system was investigated. A series of Nb-rich ternary alloys were synthesized from high-purity Nb, Al, and Fe metals by arc melting. Solidification paths were identified and the liquidus surface of the Nb corner of the ternary system was established by analysis of the as-melted microstructures and thermal analysis. Complementary analysis of heat-treated samples yielded isothermal sections at 1723 K and 1873 K (1450 °C and 1600 °C).

  9. Characterization of Al2O3-Co ceramic composite obtained by high energy mill

    International Nuclear Information System (INIS)

    Souza, J.L.; Assis, R.B. de; Carlos, E.M.; Oliveira, T.P.; Costa, F.A. da

    2014-01-01

    This work aims to characterize the ceramic composite Al 2 O3-Co obtained by high energy grinding. The composites were obtained by milling Al 2 O 3 and Co in a high energy mill at a speed of 400 rpm, in proportions of 5 to 20% Cobalt (Co). Ceramic composites with 5 and 20% cobalt were sintered at 1200 and 1300 ° C, with a 60-minute plateau and a heating rate of 10 ° C / min. The samples were characterized by X-ray diffraction (XRD), thermogravimetry and differential scanning calorimetry (TG / DSC) and scanning electron microscopy (SEM). The results show the significant effect of cobalt percentage and high energy grinding on the final properties of the Al 2 O 3 - Co ceramic composite, presenting satisfactory values for the composite with a 20% cobalt percentage, showing to be a promising material for application in cutting tools

  10. Omethoate treatment mitigates high salt stress inhibited maize seed germination.

    Science.gov (United States)

    Yang, Kejun; Zhang, Yifei; Zhu, Lianhua; Li, Zuotong; Deng, Benliang

    2018-01-01

    Omethoate (OM) is a highly toxic organophophate insecticide, which is resistant to biodegradation in the environment and is widely used for pest control in agriculture. The effect of OM on maize seed germination was evaluated under salt stress. Salt (800mM) greatly reduced germination of maize seed and this could be reversed by OM. Additionally, H 2 O 2 treatment further improved the effect of OM on seed germination. Higher H 2 O 2 content was measured in OM treated seed compared to those with salt stress alone. Dimethylthiourea (DTMU), a specific scavenger of reactive oxygen species (ROS), inhibited the effect of OM on seed germination, as did IMZ (imidazole), an inhibitor of NADPH oxidase. Abscisic acid (ABA) inhibited the effect of OM on seed germination, whereas fluridone, a specific inhibitor of ABA biosynthesis, enhanced the effect of OM. Taken together, these findings suggest a role of ROS and ABA in the promotion of maize seed germination by OM under salt stress. Copyright © 2017 Elsevier Inc. All rights reserved.

  11. Structure of spinel at high temperature using in-situ XANES study at the Al and Mg K-edge

    Energy Technology Data Exchange (ETDEWEB)

    Ligny, D de [Universite Claude Bernard Lyon 1, LPCML, 69622 Villeurbanne (France); Neuville, D R [Physique des Mineraux et Magmas, Geochimie-Cosmochimie, CNRS-IPGP, 4 place Jussieu, 75005 Paris (France); Flank, A-M; Lagarde, P, E-mail: deligny@pcml.univ-lyon1.f [Synchrotron SOLEIL, L' Orme des Merisiers, Saint Aubin, 91192 France (France)

    2009-11-15

    We present structural information obtained on spinel at high temperature (298-2400 K) using in situ XANES at the Mg and Al K-edge. Spinel, {sup [4]}(Al{sub x},Mg{sub 1-x}){sup [6]}(Al{sub 2-x},Mg{sub x})O{sub 4}, with increasing temperature, show a substitution of Mg by Al and Al by Mg in their respective sites. This substitution corresponds to an inversion of the Mg and Al sites. Furthermore, both experiments at the Al and Mg K-edges are in good agreement with XANES calculation made using FDMNES code.

  12. An Investigation of the Correlation among Sources of Stress, Perceived Stress, and Coping styles in High School Students

    Directory of Open Access Journals (Sweden)

    Farhadh Asghari

    2016-07-01

    Full Text Available Background and Objectives: Coping with stress is an important issue, especially in regard to source of stress and perceived stress in adolescence period. In this research, the correlation among stress sources, perceived stress, and coping styles was investigated in high school students. Methods: The present research was a descriptive correlational study. The research sample consisted of 575 high school students from the families of personnel of Bushehr University of Medical Sciences in education year 2014-15 who were selected by multistage cluster sampling method. Stress source scale, perceived stress scale and Tehran coping styles scale, were used for data collection. The data were analyzed using statistical methods, including Pearson correlation coefficient and multivariate regression analysis. Results: In this study, 50% of students had perceived stress higher than cut-off point. Stress sources of students were related to school and maturity. There was a positive correlation between problem-oriented coping style and perceived stress, and there was a negative and inverse correlation between problem-oriented coping style and stress related to school and maturity. There was a positive correlation between positive emotion-oriented coping style and perceived stress, but there was a negative and inverse correlation between problem-oriented coping style and stress related to school and maturity. There was no significant correlation between emotion-oriented coping style and stress related to school, maturity, family, and peers. There was a positive correlation between negative emotion-oriented coping style and stress related to school, maturity, and peers. Conclusion: According to the findings of this study, the level of correlation was not significant and no significant relationship could be found between the variables with this level of correlation. Therefore, it is suggested that more extensive researches be conducted on the relationship between

  13. Separating heat stress from moisture stress: analyzing yield response to high temperature in irrigated maize

    Science.gov (United States)

    Carter, Elizabeth K.; Melkonian, Jeff; Riha, Susan J.; Shaw, Stephen B.

    2016-09-01

    Several recent studies have indicated that high air temperatures are limiting maize (Zea mays L.) yields in the US Corn Belt and project significant yield losses with expected increases in growing season temperatures. Further work has suggested that high air temperatures are indicative of high evaporative demand, and that decreases in maize yields which correlate to high temperatures and vapor pressure deficits (VPD) likely reflect underlying soil moisture limitations. It remains unclear whether direct high temperature impacts on yields, independent of moisture stress, can be observed under current temperature regimes. Given that projected high temperature and moisture may not co-vary the same way as they have historically, quantitative analyzes of direct temperature impacts are critical for accurate yield projections and targeted mitigation strategies under shifting temperature regimes. To evaluate yield response to above optimum temperatures independent of soil moisture stress, we analyzed climate impacts on irrigated maize yields obtained from the National Corn Growers Association (NCGA) corn yield contests for Nebraska, Kansas and Missouri. In irrigated maize, we found no evidence of a direct negative impact on yield by daytime air temperature, calculated canopy temperature, or VPD when analyzed seasonally. Solar radiation was the primary yield-limiting climate variable. Our analyses suggested that elevated night temperature impacted yield by increasing rates of phenological development. High temperatures during grain-fill significantly interacted with yields, but this effect was often beneficial and included evidence of acquired thermo-tolerance. Furthermore, genetics and management—information uniquely available in the NCGA contest data—explained more yield variability than climate, and significantly modified crop response to climate. Thermo-acclimation, improved genetics and changes to management practices have the potential to partially or completely

  14. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  15. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

    Directory of Open Access Journals (Sweden)

    Xingpeng Liu

    2017-12-01

    Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

  16. High level compressive residual stresses produced in aluminum alloys by laser shock processing

    International Nuclear Information System (INIS)

    Gomez-Rosas, G.; Rubio-Gonzalez, C.; Ocana, J.L; Molpeceres, C.; Porro, J.A.; Chi-Moreno, W.; Morales, M.

    2005-01-01

    Laser shock processing (LSP) has been proposed as a competitive alternative technology to classical treatments for improving fatigue and wear resistance of metals. We present a configuration and results for metal surface treatments in underwater laser irradiation at 1064 nm. A convergent lens is used to deliver 1.2 J/cm 2 in a 8 ns laser FWHM pulse produced by 10 Hz Q-switched Nd:YAG, two laser spot diameters were used: 0.8 and 1.5 mm. Results using pulse densities of 2500 pulses/cm 2 in 6061-T6 aluminum samples and 5000 pulses/cm 2 in 2024 aluminum samples are presented. High level of compressive residual stresses are produced -1600 MPa for 6061-T6 Al alloy, and -1400 MPa for 2024 Al alloy. It has been shown that surface residual stress level is higher than that achieved by conventional shot peening and with greater depths. This method can be applied to surface treatment of final metal products

  17. Preparation and investigation of nano-AlN lubricant with high performance

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Yu; Tao, Yuxiao; Wang, Biaobing [School of Materials Science and Engineering, Changzhou University, Changzhou 201326 (China); Tai, Yanlong, E-mail: ytai@ucdavis.edu [Department of Biomedical Engineering, University of California Davis, Davis, CA 95616 (United States)

    2014-09-15

    A new kind of macromolecular coupling agent (LMW-a-PP-g-MAH) of maleic anhydride (MAH) onto low-molecular-weight atactic polypropylene (LMW-a-PP) was synthesized according to molecular design and was used as modifier for surface modification of nano-Aluminum nitride (AlN) by a high-pressure homogenization (HPH) process. IR was conducted to confirm the chemical structure of the step products of LMW-a-PP-g-MAH. The availability as a modifier for surface modification of nano-AlN was distinguished by Fourier transform infrared spectroscopy (FTIR), particle size analysis, transmission electron microscope (TEM), thermogravimetric analysis (TGA), contact angle experiments and the dispersion stability in dimethylbenzene and Greatwall lubrication oil. It can be inferred that the optimal loading is 10 wt. %–12 wt. % of LMW-a-PP-g-MAH to modify nano-AlN particles. Nano-AlN lubricating composite materials (LMW-a-PP-g-MAH-AlN) was used to improve the antifriction performance and the load capability of Greatwall lubrication oil, and maximum non-seizure load (P{sub B}) can increase highly from 1000 N to 1490 N when the loading is 0.3 wt. %. - Highlights: • Design and synthesis of macromolecular coupling agent (a-PP-g-MAH). • Surface modification and characterization of nano-AlN by HPH process. • Preparation and investigation of nano-AlN/lubricating oil with high performance.

  18. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Jing-Jing, Ma; Cheng, Zhu

    2010-01-01

    The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R Gate , channel resistance R channel , gate current I G,off at V GS = −5 and V DS = 0.1 V, and drain current I D,max at V GS = 2 and V DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. First principles study of LiAlO2: new dense monoclinic phase under high pressure

    Science.gov (United States)

    Liu, Guangtao; Liu, Hanyu

    2018-03-01

    In this work, we have systematically explored the crystal structures of LiAlO2 at high pressures using crystal structure prediction method in combination with the density functional theory calculations. Besides the reported α, β, γ, δ and ɛ-phases, here we propose a new monoclinic ζ-LiAlO2 (C2/m) structure, which becomes thermodynamically and dynamically stable above 27 GPa. It is found that the cation coordination number increases from 4 to 6 under compression. Consisting of the compact {LiO6} and {AlO6} octahedrons, the newly-discovered ζ-phase possesses a very high density. Further electronic calculations show that LiAlO2 is still an insulator up to 60 GPa, and its bandgap increases upon compression. The present study advances our understanding on the crystal structures and high-pressure phase transitions of LiAlO2 that may trigger applications in multiple areas of industry and provoke more related basic science research.

  20. Stress

    Science.gov (United States)

    ... can be life-saving. But chronic stress can cause both physical and mental harm. There are at least three different types of stress: Routine stress related to the pressures of work, family, and other daily responsibilities Stress brought about ...

  1. Noise performance in AlGaN/GaN HEMTs under high drain bias

    International Nuclear Information System (INIS)

    Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

    2009-01-01

    The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

  2. An inducer of VGF protects cells against ER stress-induced cell death and prolongs survival in the mutant SOD1 animal models of familial ALS.

    Directory of Open Access Journals (Sweden)

    Masamitsu Shimazawa

    2010-12-01

    Full Text Available Amyotrophic lateral sclerosis (ALS is the most frequent adult-onset motor neuron disease, and recent evidence has suggested that endoplasmic reticulum (ER stress signaling is involved in the pathogenesis of ALS. Here we identified a small molecule, SUN N8075, which has a marked protective effect on ER stress-induced cell death, in an in vitro cell-based screening, and its protective mechanism was mediated by an induction of VGF nerve growth factor inducible (VGF: VGF knockdown with siRNA completely abolished the protective effect of SUN N8075 against ER-induced cell death, and overexpression of VGF inhibited ER-stress-induced cell death. VGF level was lower in the spinal cords of sporadic ALS patients than in the control patients. Furthermore, SUN N8075 slowed disease progression and prolonged survival in mutant SOD1 transgenic mouse and rat models of ALS, preventing the decrease of VGF expression in the spinal cords of ALS mice. These data suggest that VGF plays a critical role in motor neuron survival and may be a potential new therapeutic target for ALS, and SUN N8075 may become a potential therapeutic candidate for treatment of ALS.

  3. High-temperature resistant MeCrAlY+Al coatings obtained by ARC-PVD method on Ni Base superalloys

    International Nuclear Information System (INIS)

    Swadzba, L.; Maciejny, A.; Mendala, B.; Supernak, W.

    1999-01-01

    Investigations of obtaining high temperature coatings on the Ni base superalloys by the ARC-PVD method, using exothermic reaction processes between Ni and Al with NiAl intermetallic formation are presented in the article. By the diffusion heating at 1050 o C NiAl high temperature diffusion coating containing 21% at. Al and 50 μm thick was obtained. In the next stage coatings with more complex chemical composition NiCoCrAlY were formed. The two targets were applied for formation of complex NiCoCrAlY coatings. The good consistence between the chemical composition of the targets and the coatings and an uniform distribution of elements in the coatings were shown. Then the surface was covered with aluminium also by the ARC-PVD method. In the vacuum chamber of the equipment a synthesis reaction between NiCoCrAlY and Al with the formation NiAl intermetallics of high Co, Cr, Y content was initiated by the changes in process parameters. The final heat treatment of coatings was conducted in the air and vacuum at 1050 o C. The strong segregation of yttrium in to the oxide scale in the specimens heated in the air was shown. It was possible to obtain NiAl intermetallic phase coatings modified by Co, Cr and Y by the ARC-PVD method. An example of the application of this method for the aircraft engine turbine blades was presented. Method of ARC-PVD gives the possibility chemical composition and high resistance to oxidizing and hot corrosion. (author)

  4. High-uranium-loaded U3O8--Al fuel element development program

    International Nuclear Information System (INIS)

    Martin, M.M.

    1978-01-01

    The High-Uranium-Loaded U 3 O 8 --Al Fuel Development Program supports Argonne National Laboratory efforts to develop high-uranium-density research and test reactor fuel to accommodate use of low-uranium enrichment. The goal is to fuel most research and test reactors with uranium of less than 20% enrichment for the purpose of lowering the potential for diversion of highly-enriched material for nonpeaceful usages

  5. High strength nanostructured Al-based alloys through optimized processing of rapidly quenched amorphous precursors.

    Science.gov (United States)

    Kim, Song-Yi; Lee, Gwang-Yeob; Park, Gyu-Hyeon; Kim, Hyeon-Ah; Lee, A-Young; Scudino, Sergio; Prashanth, Konda Gokuldoss; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2018-01-18

    We report the methods increasing both strength and ductility of aluminum alloys transformed from amorphous precursor. The mechanical properties of bulk samples produced by spark-plasma sintering (SPS) of amorphous Al-Ni-Co-Dy powders at temperatures above 673 K are significantly enhanced by in-situ crystallization of nano-scale intermetallic compounds during the SPS process. The spark plasma sintered Al 84 Ni 7 Co 3 Dy 6 bulk specimens exhibit 1433 MPa compressive yield strength and 1773 MPa maximum strength together with 5.6% plastic strain, respectively. The addition of Dy enhances the thermal stability of primary fcc Al in the amorphous Al-TM -RE alloy. The precipitation of intermetallic phases by crystallization of the remaining amorphous matrix plays important role to restrict the growth of the fcc Al phase and contributes to the improvement of the mechanical properties. Such fully crystalline nano- or ultrafine-scale Al-Ni-Co-Dy systems are considered promising for industrial application because their superior mechanical properties in terms of a combination of very high room temperature strength combined with good ductility.

  6. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    International Nuclear Information System (INIS)

    Kalay, Yunus Eren

    2008-01-01

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T 0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T 0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 (micro)m with a Peclet number of ∼0.2, JH and TMK deviate from each other. This

  7. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kalay, Yunus Eren [Iowa State Univ., Ames, IA (United States)

    2009-01-01

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of ~0.2, JH and TMK deviate from

  8. Advances in processing of NiAl intermetallic alloys and composites for high temperature aerospace applications

    Science.gov (United States)

    Bochenek, Kamil; Basista, Michal

    2015-11-01

    Over the last few decades intermetallic compounds such as NiAl have been considered as potential high temperature structural materials for aerospace industry. A large number of investigations have been reported describing complex fabrication routes, introducing various reinforcing/alloying elements along with theoretical analyses. These research works were mainly focused on the overcoming of main disadvantage of nickel aluminides that still restricts their application range, i.e. brittleness at room temperature. In this paper we present an overview of research on NiAl processing and indicate methods that are promising in solving the low fracture toughness issue at room temperature. Other material properties relevant for high temperature applications are also addressed. The analysis is primarily done from the perspective of NiAl application in aero engines in temperature regimes from room up to the operating temperature (over 1150 °C) of turbine blades.

  9. Oxidative stress at high altitude: genotype–phenotype correlations

    Directory of Open Access Journals (Sweden)

    Pandey P

    2014-05-01

    Full Text Available Priyanka Pandey,1,2 MA Qadar Pasha1,2 1CSIR-Institute of Genomics and Integrative Biology, Delhi, India; 2Department of Biotechnology, University of Pune, Ganeshkhind, Pune, India Abstract: It has been well-documented that the hypobaric hypoxic environment at high altitude (HA causes stress to both the permanent residents of HA and the sojourners. This oxidative stress primarily disturbs the oxygen-sensing and vascular homeostasis pathways, thereby upsetting normal human physiology, especially in sojourners. These environmental challenges have caused dynamic evolutionary changes within natives of HA, allowing them to develop adaptive plasticity. This review focuses on the genomic and biochemical features of the molecules involved in the oxygen-sensing and vascular homeostasis pathways with respect to HA pulmonary edema (HAPE and adaptation. We review the role of genetic markers such as HIF-prolyl hydroxylase 2, endothelial PAS domain-containing protein 1, endothelial nitric oxide synthase, endothelin 1, cytochrome b-245 alpha polypeptide, and glutathione S-transferase pi 1, as well as three circulatory biomarkers (nitric oxide, endothelin 1, and 8-iso-prostaglandin F2α, by highlighting approaches such as candidate gene and genome-wide, adopted in deciphering the pathways. A disagreement between the two approaches has also been highlighted. In addition, we discuss that an overrepresentation of wild-type alleles in HA natives and mutant alleles of same polymorphisms in HAPE patients implies that the allelic variants at the same locus are involved in adaptation and HAPE, respectively. Moreover, healthy sojourners present a number of genomic features similar to HA natives, further strengthening the concept of genetic predisposition. A trend in correlation between protective and risk alleles and altered levels of circulatory markers clearly documents the phenomenon of genotype–phenotype correlations. We conclude that the genetic and biochemical

  10. Microstructure Characterization and Stress Corrosion Evaluation of Autogenous and Hybrid Friction Stir Welded Al-Cu-Li 2195 Alloy

    Science.gov (United States)

    Li, Zhixian; Arbegast, William J.; Meletis, Efstathios I.

    1997-01-01

    Friction stir welding process is being evaluated for application on the Al-Cu-Li 2195 Super-Light Weight External Tank of the Space Transportation System. In the present investigation Al-Cu-Li 2195 plates were joined by autogenous friction stir welding (FSW) and hybrid FSW (friction stir welding over existing variable polarity plasma arc weld). Optical microscopy and transmission electron microscopy (TEM) were utilized to characterize microstructures of the weldments processed by both welding methods. TEM observations of autogenous FSW coupons in the center section of the dynamically-recrystallized zone showed an equiaxed recrystallized microstructure with an average grain size of approx. 3.8 microns. No T(sub 1), precipitates were present in the above-mentioned zone. Instead, T(sub B) and alpha precipitates were found in this zone with a lower population. Alternate immersion, anodic polarization, constant load, and slow strain tests were carried out to evaluate the general corrosion and stress-corrosion properties of autogenous and hybrid FSW prepared coupons. The experimental results will be discussed.

  11. Photodynamic diagnostics of stress-induced gastrointestinal neoplasia in laboratory animals using 5-aminolevulinic acid and Al-phthalocyanine

    Science.gov (United States)

    Borisova, Ekaterina; Semyachkina-Glushkovskaya, Oxana; Navolokin, Nikita; Mantareva, Vanya; Angelov, Ivan; Agranovich, Ilana; Khorovodov, Alexander; Shushunova, Natalia; Bodrova, Anastasiya; Fedosov, Ivan; Namykin, Anton; Abdurashitov, Arkady; Avramov, Latchezar

    2018-02-01

    The main research objective is the development of innovative optical technologies for sensitive diagnosis of early stages of development of stomach cancer and monitoring of stress-induced appearance and development of tumors of the gastrointestinal tract by applying endogenous and exogenous fluorescence spectroscopy modalities. Different mechanisms solely and in combination for evaluation of the joint impact of bioenvironmental factors (stress, Helicobacter pillory, exo-toxins in the food, water, soil and air) were applied to induce gastrointestinal tract (GIT) neoplasia in rats. The transformation of damaged areas of the stomach mucosa into malignancies in all parts of gastrointestinal tract were detected using exogenous fluorescence of photosensitizers - 5-aminolevulinic acid (5-ALA) and aluminum phthalocyanine (Al-Pc). Fluorescent mapping of different organs (liver, spleen, lungs, brain) also was developed - to evaluate the distribution of the photosensitizers in the whole body on the second hour after photosensitizer application by intravenous injection. Fiber-optic probe was used to measure the organs investigated. Fluorescence spectra were detected by microspectrometer USB4000 (OceanOptics Inc., USA), and FS405 LED source on 405 nm was used as excitation source for both types of photosensitizers applied. Diagnostically-important parameters of oximetry, optical coherence tomography and speckle-imaging of the microcirculation of the stomach were also evaluated, to evaluate changes in the blood flow and vascular architecture, during the formation of the initial phases of the neoplasm development.

  12. Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

    KAUST Repository

    Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah; Shakfa, M. Khaled; Ng, Tien Khee; Ooi, Boon S.

    2018-01-01

    P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

  13. Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

    KAUST Repository

    Zhao, Chao

    2018-05-29

    P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

  14. Stress corrosion cracking of highly irradiated 316 stainless steels

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, Morihito; Fukuya, Koji; Fujii, Katsuhiko; Nakajima, Nobuo; Furutani, Gen [Institute of Nuclear Safety System Inc., Mihama, Fukui (Japan)

    2001-09-01

    Mechanical property tests, grain boundary (GB) composition analysis and slow strain rate test (SSRT) in simulated PWR primary water changing dissolved hydrogen (DH) and dissolved oxygen (DO) content were carried out on cold-worked (CW) 316 stainless steels which were irradiated to 1-8x10{sup 26} n/m{sup 2} (E>0.1 MeV) in a Japanese PWR in order to evaluate irradiation-assisted stress corrosion cracking (IASCC) susceptibility. Highly irradiated stainless steels were susceptible to intergranular stress corrosion cracking (IGSCC) in both hydrogenated water and oxygenated water and to intergranular cracking in inert gas atmosphere. IASCC susceptibility increased with increasing DH content (0-45 ccH{sub 2}/kgH{sub 2}O). Hydrogen content of the section containing fracture surface was higher than that of the section far from fracture surface. These results suggest that hydrogen would have an important role for IASCC. While mechanical property was saturated, GB segregation and IASCC susceptibility increased with an increase in fluence, suggesting that GB segregation would have a dominant role for an increase in IASCC susceptibility at this high fluence region. (author)

  15. Investigation of creep threshold stresses using in situ TEM straining experiment in an Al-5Y2O3-10SiC composite

    International Nuclear Information System (INIS)

    Deshmukh, S.P.; Mishra, R.S.; Robertson, I.M.

    2010-01-01

    Creep behavior of metal matrix composites is similar to dispersion strengthen alloys and characterized by the presence of a threshold stress below which the creep rate is negligible. This threshold stress is attributed, at least in dispersion-strengthened alloys, to dislocation particle interactions in which the detachment of the dislocations from the particle is the rate-limiting step. Creep experiments were performed on an Al-5Y 2 O 3 -10SiC composite in the temperature range of 473 and 573 K and the nature of the dislocation-particle interaction was determined by performing in situ straining experiments at elevated temperature in a transmission electron microscope. The threshold stress and the detachment stress are temperature dependent and the detachment stress is less than the threshold stress emphasizing the contribution of load transfer from the matrix to the reinforcement phase.

  16. Development of a high temperature high strength Al alloy by addition of small amounts of Sc and Mg to 2219 alloy

    Energy Technology Data Exchange (ETDEWEB)

    Mondol, S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Alam, T.; Banerjee, R. [Advanced Materials and Manufacturing Processes Institute and Department of Materials Science and Engineering, University of North Texas, Denton, TX 76203-5017 (United States); Kumar, S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Chattopadhyay, K., E-mail: kamanio@materials.iisc.ernet.in [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2017-02-27

    The paper reports a significant improvement in tensile properties, in particular at 200 °C, of commercial 2219 Al alloy by addition of small amounts of Sc (0.8 wt%) and Mg (0.45 wt%), and employing copper mould suction casting followed by natural ageing and cold rolling. Microstructural examination and measurement of hardness were performed in order to explain the effects of Sc and Mg at each processing step. It is found that the remarkable improvement of room temperature strength occurs due to fine grain size, Al{sub 3}Sc and Al{sub 3}(Sc,Zr) dispersoids, GP zones on {100} and {111} planes, and work hardening. On exposure at 200 °C, the GP zones transform primarily to θ′ precipitates and a few Ω precipitates. Sc and Mg atoms segregate at the θ′/matrix interface, which suppress the coarsening of θ′ precipitates and make them stable at higher temperatures. Thus, the work reports extremely high 0.2% proof stress of 542 MPa at room temperature, 378 MPa at 200 °C and 495 MPa at room temperature after 200 h exposure at 200 °C accompanied by reasonable ductility. Theoretical yield strength is calculated on the basis of the observed microstructure and is found to be in good agreement with the experimentally obtained value.

  17. Development of a high temperature high strength Al alloy by addition of small amounts of Sc and Mg to 2219 alloy

    International Nuclear Information System (INIS)

    Mondol, S.; Alam, T.; Banerjee, R.; Kumar, S.; Chattopadhyay, K.

    2017-01-01

    The paper reports a significant improvement in tensile properties, in particular at 200 °C, of commercial 2219 Al alloy by addition of small amounts of Sc (0.8 wt%) and Mg (0.45 wt%), and employing copper mould suction casting followed by natural ageing and cold rolling. Microstructural examination and measurement of hardness were performed in order to explain the effects of Sc and Mg at each processing step. It is found that the remarkable improvement of room temperature strength occurs due to fine grain size, Al 3 Sc and Al 3 (Sc,Zr) dispersoids, GP zones on {100} and {111} planes, and work hardening. On exposure at 200 °C, the GP zones transform primarily to θ′ precipitates and a few Ω precipitates. Sc and Mg atoms segregate at the θ′/matrix interface, which suppress the coarsening of θ′ precipitates and make them stable at higher temperatures. Thus, the work reports extremely high 0.2% proof stress of 542 MPa at room temperature, 378 MPa at 200 °C and 495 MPa at room temperature after 200 h exposure at 200 °C accompanied by reasonable ductility. Theoretical yield strength is calculated on the basis of the observed microstructure and is found to be in good agreement with the experimentally obtained value.

  18. Hydrogen selective NH{sub 2}-MIL-53(Al) MOF membranes with high permeability

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Feng; Zou, Xiaoqin; Gao, Xue; Fan, Songjie; Sun, Fuxing; Ren, Hao; Zhu, Guangshan [State Key Laboratory of Inorganic, Synthesis and Preparative Chemistry, Jilin University, Changchun (China)

    2012-09-11

    Hydrogen-based energy is a promising renewable and clean resource. Thus, hydrogen selective microporous membranes with high performance and high stability are demanded. Novel NH{sub 2}-MIL-53(Al) membranes are evaluated for hydrogen separation for this goal. Continuous NH{sub 2}-MIL-53(Al) membranes have been prepared successfully on macroporous glass frit discs assisted with colloidal seeds. The gas sorption ability of NH{sub 2}-MIL-53(Al) materials is studied by gas adsorption measurement. The isosteric heats of adsorption in a sequence of CO{sub 2}> N{sub 2}> CH{sub 4}{approx} H{sub 2} indicates different interactions between NH{sub 2}-MIL-53(Al) framework and these gases. As-prepared membranes are measured by single and binary gas permeation at different temperatures. The results of singe gas permeation show a decreasing permeance in an order of H{sub 2}> CH{sub 4}> N{sub 2}> CO{sub 2}, suggesting that the diffusion and adsorption properties make significant contributions in the gas permeation through the membrane. In binary gas permeation, the NH{sub 2}-MIL-53(Al) membrane shows high selectivity for H{sub 2} with separation factors of 20.7, 23.9 and 30.9 at room temperature (288 K) for H{sub 2} over CH{sub 4}, N{sub 2} and CO{sub 2}, respectively. In comparison to single gas permeation, a slightly higher separation factor is obtained due to the competitive adsorption effect between the gases in the porous MOF membrane. Additionally, the NH{sub 2}-MIL-53(Al) membrane exhibits very high permeance for H{sub 2} in the mixtures separation (above 1.5 x 10{sup -6} mol m{sup -2} s{sup -1} Pa{sup -1}) due to its large cavity, resulting in a very high separation power. The details of the temperature effect on the permeances of H{sub 2} over other gases are investigated from 288 to 353 K. The supported NH{sub 2}-MIL-53(Al) membranes with high hydrogen separation power possess high stability, resistance to cracking, temperature cycling and show high reproducibility

  19. High lung volume increases stress failure in pulmonary capillaries

    Science.gov (United States)

    Fu, Z.; Costello, M. L.; Tsukimoto, K.; Prediletto, R.; Elliott, A. R.; Mathieu-Costello, O.; West, J. B.

    1992-01-01

    We previously showed that when pulmonary capillaries in anesthetized rabbits are exposed to a transmural pressure (Ptm) of approximately 40 mmHg, stress failure of the walls occurs with disruption of the capillary endothelium, alveolar epithelium, or sometimes all layers. The present study was designed to test whether stress failure occurred more frequently at high than at low lung volumes for the same Ptm. Lungs of anesthetized rabbits were inflated to a transpulmonary pressure of 20 cmH2O, perfused with autologous blood at 32.5 or 2.5 cmH2O Ptm, and fixed by intravascular perfusion. Samples were examined by both transmission and scanning electron microscopy. The results were compared with those of a previous study in which the lung was inflated to a transpulmonary pressure of 5 cmH2O. There was a large increase in the frequency of stress failure of the capillary walls at the higher lung volume. For example, at 32.5 cmH2O Ptm, the number of endothelial breaks per millimeter cell lining was 7.1 +/- 2.2 at the high lung volume compared with 0.7 +/- 0.4 at the low lung volume. The corresponding values for epithelium were 8.5 +/- 1.6 and 0.9 +/- 0.6. Both differences were significant (P less than 0.05). At 52.5 cmH2O Ptm, the results for endothelium were 20.7 +/- 7.6 (high volume) and 7.1 +/- 2.1 (low volume), and the corresponding results for epithelium were 32.8 +/- 11.9 and 11.4 +/- 3.7. At 32.5 cmH2O Ptm, the thickness of the blood-gas barrier was greater at the higher lung volume, consistent with the development of more interstitial edema. Ballooning of the epithelium caused by accumulation of edema fluid between the epithelial cell and its basement membrane was seen at 32.5 and 52.5 cmH2O Ptm. At high lung volume, the breaks tended to be narrower and fewer were oriented perpendicular to the axis of the pulmonary capillaries than at low lung volumes. Transmission and scanning electron microscopy measurements agreed well. Our findings provide a physiological

  20. A Combined Precipitation, Yield Stress, and Work Hardening Model for Al-Mg-Si Alloys Incorporating the Effects of Strain Rate and Temperature

    Science.gov (United States)

    Myhr, Ole Runar; Hopperstad, Odd Sture; Børvik, Tore

    2018-05-01

    In this study, a combined precipitation, yield strength, and work hardening model for Al-Mg-Si alloys known as NaMo has been further developed to include the effects of strain rate and temperature on the resulting stress-strain behavior. The extension of the model is based on a comprehensive experimental database, where thermomechanical data for three different Al-Mg-Si alloys are available. In the tests, the temperature was varied between 20 °C and 350 °C with strain rates ranging from 10-6 to 750 s-1 using ordinary tension tests for low strain rates and a split-Hopkinson tension bar system for high strain rates, respectively. This large span in temperatures and strain rates covers a broad range of industrial relevant problems from creep to impact loading. Based on the experimental data, a procedure for calibrating the different physical parameters of the model has been developed, starting with the simplest case of a stable precipitate structure and small plastic strains, from which basic kinetic data for obstacle limited dislocation glide were extracted. For larger strains, when work hardening becomes significant, the dynamic recovery was linked to the Zener-Hollomon parameter, again using a stable precipitate structure as a basis for calibration. Finally, the complex situation of concurrent work hardening and dynamic evolution of the precipitate structure was analyzed using a stepwise numerical solution algorithm where parameters representing the instantaneous state of the structure were used to calculate the corresponding instantaneous yield strength and work hardening rate. The model was demonstrated to exhibit a high degree of predictive power as documented by a good agreement between predictions and measurements, and it is deemed well suited for simulations of thermomechanical processing of Al-Mg-Si alloys where plastic deformation is carried out at various strain rates and temperatures.

  1. Modification of oxide inclusions in calcium-treated Al-killed high sulphur steels

    NARCIS (Netherlands)

    Gollapalli, Veerababu; Rao, M.B.Venkata; Karamched, P.S.; Borra, C.R.; Roy, G.G.; Srirangam, Prakash

    2018-01-01

    A study has been carried out to understand the modification of alumina inclusions in Al-killed high sulphur steel with calcium treatment. For calcium treatment to be effective, a general practice is to desulphurise the steel to prevent the formation of solid CaS inclusions that are harmful to

  2. Electrical resistance and magnetoresistance of UCoAl under high pressure

    Czech Academy of Sciences Publication Activity Database

    Honda, F.; Oomi, G.; Andreev, Alexander V.; Sechovský, V.; Shiokawa, Y.

    --, - (2002), s. 126-128 ISSN 0022-3131 R&D Projects: GA ČR GP202/01/D045 Institutional research plan: CEZ:AV0Z1010914 Keywords : UCoAl * non-Fermi liquid * itinerant metamagnetism * electrical resistance * high pressure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.572, year: 2002

  3. Recrystallization textures and microstructures of Al-0.3%Cu alloy after deformation to high strains

    DEFF Research Database (Denmark)

    Li, X.R.; Wakeel, A.; Huang, T.L.

    2015-01-01

    An Al-0.3%Cu alloy was deformed to high strains by cold rolling. The as-deformed samples were annealed at different temperatures until complete recrystallization. The cold rolling textures were determined by X-ray diffraction while the recrystallization textures and microstructures were...

  4. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  5. Derivation of Apollo 14 High-Al Basalts at Discrete Times: Rb-Sr Isotopic Constraints

    Science.gov (United States)

    Hui, H.; Neal, C. R.; Shih, C.-Y.; Nyquist, L. E.

    2012-03-01

    Four eruption episodes were identified for A-14 high-Al basalts. Rb-Sr isotopic data and ITE ratios show that their parental melt compositions of are correlated through mixing of evolved components with a relatively primitive magma ocean cumulate.

  6. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  7. The structural variation of rhombohedral LaAlO3 perovskite under non-hydrostatic stress fields in a diamond-anvil cell

    International Nuclear Information System (INIS)

    Zhao Jing; Angel, Ross J; Ross, Nancy L

    2011-01-01

    The structural variation of LaAlO 3 perovskite under non-hydrostatic stress developed in the pressure medium within a diamond-anvil cell was determined using single-crystal x-ray diffraction. The experimental results show that the lattice of LaAlO 3 becomes more distorted and deviates from the hydrostatic behavior as pressure is increased up to 7.5 GPa. The determination of the crystal structure further confirms that the octahedral AlO 6 groups become more distorted, but the octahedral rotation around the threefold axis decreases as under hydrostatic conditions. These experimental results can be reproduced from knowledge of the elastic tensor of the sample at ambient conditions and the stress state within the pressure medium. Further calculations for two other orientations also indicate that non-hydrostatic stress has only a small effect on the rotation of the AlO 6 octahedra towards zero, but non-hydrostatic stress inevitably leads to distortions in the crystal lattice and the AlO 6 octahedra. As a result, the crystal structure is eventually driven away from cubic symmetry under non-hydrostatic conditions, whereas it evolves towards cubic symmetry under hydrostatic pressure.

  8. Feasibility study of Nb3Al Rutherford cable for high field accelerator magnet application

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, R.; /Fermilab; Kikuchi, A.; /Tsukuba Magnet Lab.; Ambrosio, G.; Andreev, N.; Barzi, E.; Cooper, C.; Feher, S.; Kashikhin, V.V.; Lamm, M.; Novitski, I.; /Fermilab; Takeuchi, T.; /Tsukuba Magnet Lab.; Tartaglia, M.; Turrioni, D.; /Fermilab; Verweij, A.P.; /CERN; Wake, M.; Willering, G; /Tsukuba Magnet Lab.; Zlobin, A.V.; /Fermilab

    2006-08-01

    Feasibility study of Cu stabilized Nb{sub 3}Al strand and Rutherford cable for the application to high field accelerator magnets are being done at Fermilab in collaboration with NIMS. The Nb{sub 3}Al strand, which was developed and manufactured at NIMS in Japan, has a non-copper Jc of about 844 A/mm{sup 2} at 15 Tesla at 4.2 K, a copper content of 50%, and filament size of about 50 microns. Rutherford cables with 27 Nb{sub 3}Al strands of 1.03 mm diameter were fabricated and tested. Quench tests on a short cable were done to study its stability with only its self field, utilizing a high current transformer. A pair of 2 meter long Nb{sub 3}Al cables was tested extensively at CERN at 4.3 and 1.9 K up to 11 Tesla including its self field with a high transport current of 20.2 kA. In the low field test we observed instability near splices and in the central region. This is related to the flux-jump like behavior, because of excessive amount of Nb in the Nb{sub 3}Al strand. There is possibility that the Nb in Nb{sub 3}Al can cause instability below 2 Tesla field regions. We need further investigation on this problem. Above 8 Tesla, we observed quenches near the critical surface at fast ramp rate from 1000 to 3000 A/sec, with quench velocity over 100 m/sec. A small racetrack magnet was made using a 14 m of Rutherford cable and successfully tested up to 21.8 kA, corresponding to 8.7 T.

  9. Characterization of Al2O3NP–Al2024 and AgCNP–Al2024 composites prepared by mechanical processing in a high energy ball mill

    International Nuclear Information System (INIS)

    Carreño-Gallardo, C.; Estrada-Guel, I.; Romero-Romo, M.; Cruz-García, R.; López-Meléndez, C.; Martínez-Sánchez, R.

    2012-01-01

    Graphical abstract: Mechanical alloying was used to produce two kinds of metal matrix composites based on 2024 aluminum alloy, the nanocomposites were reinforced with different percentages of Al 2 O 3 and Ag C nanoparticles. The content of nanoparticles has a role important on the mechanical properties of the nanocomposite. 10 h of milling time are enough to former the Al 2024 nanocomposites. The results obtained by differential scanning calorimeter show the temperatures of intermetallic precipitation, which were identified by X-ray diffraction. The results revealed that mechanical alloying is an excellent route to incorporate and distribute NP into Al 2024 . Highlights: ► Aluminum-based nanocomposites were synthesized bay milling process. ► An homogeneous nanoparticles dispersion was reached and mechanical properties were enhanced. ► Phase transformation during heating was characterized by XRD. - Abstract: Mechanical alloying was used to produce two kinds of metal matrix composites based on 2024 aluminum alloy. The nanocomposites were reinforced with different percentages of Al 2 O 3 and Ag C nanoparticles. The content of nanoparticles has an important role on the mechanical properties of the nanocomposites. A milling time of 10 h is enough to form the Al 2024 nanocomposites. The thermograms obtained by differential scanning calorimeter show the temperatures of phase precipitation, which were identified by X-ray diffraction. The results revealed that mechanical alloying is an excellent route for the incorporation and distribution of nanoparticles into Al 2024 .

  10. Thermodynamic calculation on the stability of (Fe,Mn){sub 3}AlC carbide in high aluminum steels

    Energy Technology Data Exchange (ETDEWEB)

    Chin, Kwang-Geun [Automotive Steel Products Research Group, POSCO Technical Research Laboratories, POSCO, Jeonnam 545-090 (Korea, Republic of); School of Materials Science and Engineering, Pusan National University, Pusan, 609-735 (Korea, Republic of); Lee, Hyuk-Joong [Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of); Kwak, Jai-Hyun [Automotive Steel Products Research Group, POSCO Technical Research Laboratories, POSCO, Jeonnam 545-090 (Korea, Republic of); Kang, Jung-Yoon [School of Materials Science and Engineering, Pusan National University, Pusan, 609-735 (Korea, Republic of); Lee, Byeong-Joo, E-mail: calphad@postech.ac.k [Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

    2010-08-27

    A CALPHAD type thermodynamic description for the Fe-Mn-Al-C quaternary system has been constructed by combining a newly assessed Mn-Al-C ternary description and a partly modified Fe-Al-C description to an existing thermodynamic database for steels. A special attention was paid to reproduce experimentally reported phase stability of {kappa} carbide in high Al and high Mn steels. This paper demonstrates that the proposed thermodynamic description makes it possible to predict phase equilibria in corresponding alloys with a practically acceptable accuracy. The applicability of the thermodynamic calculation is also demonstrated for the interpretation of microstructural and constitutional evolution during industrial processes for high Al steels.

  11. Thermodynamic calculation on the stability of (Fe,Mn)3AlC carbide in high aluminum steels

    International Nuclear Information System (INIS)

    Chin, Kwang-Geun; Lee, Hyuk-Joong; Kwak, Jai-Hyun; Kang, Jung-Yoon; Lee, Byeong-Joo

    2010-01-01

    A CALPHAD type thermodynamic description for the Fe-Mn-Al-C quaternary system has been constructed by combining a newly assessed Mn-Al-C ternary description and a partly modified Fe-Al-C description to an existing thermodynamic database for steels. A special attention was paid to reproduce experimentally reported phase stability of κ carbide in high Al and high Mn steels. This paper demonstrates that the proposed thermodynamic description makes it possible to predict phase equilibria in corresponding alloys with a practically acceptable accuracy. The applicability of the thermodynamic calculation is also demonstrated for the interpretation of microstructural and constitutional evolution during industrial processes for high Al steels.

  12. Mikrostruktur dan Karakterisasi Sifat Mekanik Lapisan Cr3C2-NiAl-Al2O3 Hasil Deposisi Dengan Menggunakan High Velocity Oxygen Fuel Thermal Spray Coating

    Directory of Open Access Journals (Sweden)

    Edy Riyanto

    2012-03-01

    Full Text Available Surface coating processing of industrial component with thermal spray coatings have been applied in many industrial fields. Ceramic matrix composite coating which consists of Cr3C2-Al2O3-NiAl had been carried out to obtain layers of material that has superior mechanical properties to enhance component performance. Deposition of CMC with High Velocity Oxygen Fuel (HVOF thermal spray coating has been employed. This study aims to determine the effect of powder particle size on the microstructure, surface roughness and hardness of the layer, by varying the NiAl powder particle size. Test results show NiAl powder particle size has an influence on the mechanical properties of CMC coating. Hardness of coating increases and surface roughness values of coating decrease with smaller NiAl particle size.  

  13. First results from the high-brightness x-ray spectroscopy beamline at ALS

    Energy Technology Data Exchange (ETDEWEB)

    Perera, R.C.C.; Ng, W.; Jones, G. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Beamline 9.3.1 at the Advanced Light Source (ALS) is a windowless beamline, covering the 1-6 keV photon-energy range, designed to achieve the goal of high brightness at the sample for use in the X-ray Atomic and Molecular Spectroscopy (XAMS) science, surface and interface science, biology and x-ray optical development programs at ALS. X-ray absorption and time of flight photo emission measurements in 2 - 5 keV photon energy in argon along with the flux, resolution, spot size and stability of the beamline will be discussed. Prospects for future XAMS measurements will also be presented.

  14. Thermal stability of multilayered Pt-Al2O3 nanocoatings for high temperature CSP systems

    CSIR Research Space (South Africa)

    Nuru, ZY

    2015-10-01

    Full Text Available B), 115-120 Thermal stability of multilayered Pt-Al2O3 nanocoatings for high temperature CSP systems Z.Y. Nuru a, b, *, L. Kotsedi a, b, C.J. Arendse c, D. Motaung d, B. Mwakikunga d, K. Roro d, e, M. Maaza a, b a UNESCO-UNISA Africa Chair... Pretoria, South Africa e R&D Core-Energy, Council for Scientific and Industrial Research, P O Box 395, 0001 Pretoria, South Africa Abstract This contribution reports on the effect of thermal annealing on sputtered Pt–Al(sub2)O(sub3) multilayered...

  15. High strength and utilizable ductility of bulk ultrafine-grained Cu-Al alloys

    Science.gov (United States)

    An, X. H.; Han, W. Z.; Huang, C. X.; Zhang, P.; Yang, G.; Wu, S. D.; Zhang, Z. F.

    2008-05-01

    Lack of plasticity is the main drawback for nearly all ultrafine-grained (UFG) materials, which restricts their practical applications. Bulk UFG Cu-Al alloys have been fabricated by using equal channel angular pressing technique. Its ductility was improved to exceed the criteria for structural utility while maintaining a high strength by designing the microstructure via alloying. Factors resulting in the simultaneously enhanced strength and ductility of UFG Cu-Al alloys are the formation of deformation twins and their extensive intersections facilitating accumulation of dislocations.

  16. Microstructure/processing relationships in high-energy high-rate consolidated powder composites of Nb-stabilized Ti3Al+TiAl

    Energy Technology Data Exchange (ETDEWEB)

    Persad, C.; Lee, B.; Hou, C.; Eliezer, Z.; Marcus, H.L.

    1989-01-01

    A new approach to powder processing is employed in forming titanium aluminide composites. The processing consists of internal heating of a customized powder blend by a fast electrical discharge of a homopolar generator. The high-energy high-rate '1MJ in 1s' pulse permits rapid heating of an electrically conducting powder mixture in a cold wall die. This short time at temperature approach offers the opportunity to control phase transformations and the degree of microstructural coarsening not readily possible with standard powder-processing approaches. This paper describes the consolidation results of titanium aluminide-based powder-composite materials. The focus of this study was the definition of microstructure/processing relationships for each of the composite constituents, first as monoliths and then in composite forms. Non-equilibrium phases present in rapidly solidified TiAl powders are transformed to metastable intermediates en route to the equilibrium gamma phase.

  17. Growth of uniform lath-like α-(Fe,Al)OOH and disc-like α-(Fe,Al)2O3 nanoparticles in a highly alkaline medium

    International Nuclear Information System (INIS)

    Krehula, Stjepko; Music, Svetozar

    2010-01-01

    The effects of aluminium (Al 3+ )-dopant on the precipitation of uniform lath-like α-FeOOH particles, the obtention and growth of α-(Fe,Al)OOH and α-(Fe,Al) 2 O 3 solid solutions, particle size and shape were investigated using X-ray powder diffraction, Moessbauer and Fourier transform infrared spectroscopies, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Acicular α-FeOOH particles, precipitated in a highly alkaline medium with the addition of tetramethylammonium hydroxide (TMAH), were used as reference material. The influence of Al-dopant was investigated by adding varying amounts of Al 3+ ions to the initial FeCl 3 solution. In the presence of lower concentrations of aluminium ions (up to 11.11 mol%) α-(Fe,Al)OOH as a single phase was formed, whereas higher concentrations led to an additional obtention and growth of α-(Fe,Al) 2 O 3 . Al-for-Fe substitution in the α-FeOOH and α-Fe 2 O 3 structures was confirmed by a decrease in the unit-cell dimensions, a decrease in the hyperfine magnetic field and an increase in the wave number of the infrared absorption bands. The presence of lower concentrations of aluminium ions (up to 11.11 mol%) in the precipitation system did not affect the size and shape of the α-(Fe,Al)OOH particles, whereas higher concentrations influenced a decrease in the length and aspect ratio. In the presence of 42.86 mol% Al 3+ ions fairly uniform disc-shaped α-(Fe,Al) 2 O 3 were formed.

  18. Mechanical clinching process stress and strain in the clinching of EN-AW5754 (AlMg3, and EN AW-5019 (AlMg5 metal plates

    Directory of Open Access Journals (Sweden)

    J. Cumin

    2018-01-01

    Full Text Available This paper presents the results of Finite Element Method numerical simulation performed onEN-AW5754(AlMg3, EN AW-5019 (AlMg5 plates subjected to mechanical clinching. The goal was to observe differences between aluminum plates in the same tool; and to determine the possibility of using the constructed tool for the clinching of Al-Al material combinations. This tool construction is to be produced and tested in laboratory conditions, to elaborate prospective results, and reach additional conclusions.

  19. In-Situ Studies of Structure Transformation and Al Coordination of KAl(MoO42 during Heating by High Temperature Raman and 27Al NMR Spectroscopies

    Directory of Open Access Journals (Sweden)

    Min Wang

    2017-03-01

    Full Text Available Recent interest in optimizing composition and synthesis conditions of functional crystals, and the further exploration of new possible candidates for tunable solid-state lasers, has led to significant research on compounds in this family MIMIII(MVIO42 (MI = alkali metal, MIII = Al, In, Sc, Fe, Bi, lanthanide; MVI = Mo, W. The vibrational modes, structure transformation, and Al coordination of crystalline, glassy, and molten states of KAl(MoO42 have been investigated by in-situ high temperature Raman scattering and 27Al magic angle spinning nuclear magnetic resonance (MAS NMR spectroscopy, together with first principles density functional simulation of room temperature Raman spectrum. The results showed that, under the present fast quenching conditions, Al is present predominantly in [AlO6] octahedra in both KAl(MoO42 glass and melt, with the tetrahedrally coordinated Al being minor at approximately 2.7%. The effect of K+, from ordered arrangement in the crystal to random distribution in the melt, on the local chemical environment of Al, was also revealed. The distribution and quantitative analysis of different Al coordination subspecies are final discussed and found to be dependent on the thermal history of the glass samples.

  20. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  1. Some aspects of the metal purity in high strength Al-alloys

    International Nuclear Information System (INIS)

    Banizs, K.; Csernay-Balint, J.; Voeroes, G.

    1990-01-01

    The effect of Fe and Si on the properties of some high strength age-hardenable Al-alloys was investigated. It was found that a certain quantity (> 0.15 %) of Fe is advantageous to the formation of the cell-structure in the cast ingot both in the AlCuMg and AlZnMgCu alloys. An increased Fe-content causes a finer cell-structure. A higher Fe:Si ratio results in more homogeneous cell size distribution. Higher Si-content in the alloy decreases the favourable cast parameter range and increases the inclination to cracking of large diameter (> 270 mm) ingots. The reason of the correlation found between metal purity and mechanical properties is discussed

  2. A Study on Development of High Strength Al-Zn Based alloy for Die Casting Ⅲ

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Sang-Soo; Park, Ik-Min [Pusan National University, Busan (Korea, Republic of); Yeom, Gil-Young; Lim, Kyoung-Mook [Korea Institute of Industrial Technology, Incheon (Korea, Republic of); Son, Hyun-Jin [Oh-Sung Co. Ltd., Siheung (Korea, Republic of)

    2015-09-15

    In this study, the microstructural evolution and various characteristics of Al-20⁓45wt%Zn alloys were investigated. In terms of microstructure, as the amount of Zn addition to the alloys increased, the α-phase size decreased and the α+η non-equilibrium solidification phase fraction increased. Also, increasing Zn content improved the wear resistance of the alloys, but reduced the damping capacity and toughness of the alloys. Their physical properties of the Al-Zn alloy with high Zn content, specifically the wear resistance and toughness, were superior to those of commercial ALDC12 alloys for die-casting. Based on these results, we considered the possibility of application of the developed Al-Zn alloy as a structural material.

  3. A Study on Development of High Strength Al-Zn Based alloy for Die Casting Ⅲ

    International Nuclear Information System (INIS)

    Shin, Sang-Soo; Park, Ik-Min; Yeom, Gil-Young; Lim, Kyoung-Mook; Son, Hyun-Jin

    2015-01-01

    In this study, the microstructural evolution and various characteristics of Al-20⁓45wt%Zn alloys were investigated. In terms of microstructure, as the amount of Zn addition to the alloys increased, the α-phase size decreased and the α+η non-equilibrium solidification phase fraction increased. Also, increasing Zn content improved the wear resistance of the alloys, but reduced the damping capacity and toughness of the alloys. Their physical properties of the Al-Zn alloy with high Zn content, specifically the wear resistance and toughness, were superior to those of commercial ALDC12 alloys for die-casting. Based on these results, we considered the possibility of application of the developed Al-Zn alloy as a structural material.

  4. Nano features of Al/Au ultrasonic bond interface observed by high resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Ji Hongjun; Li Mingyu; Kim, Jong-Myung; Kim, Dae-Won; Wang Chunqing

    2008-01-01

    Nano-scale interfacial details of ultrasonic AlSi1 wire wedge bonding to a Au/Ni/Cu pad were investigated using high resolution transmission electron microscopy (HRTEM). The intermetallic phase Au 8 Al 3 formed locally due to diffusion and reaction activated by ultrasound at the Al/Au bond interface. Multilayer sub-interfaces roughly parallel to the wire/pad interface were observed among this phase, and interdiffusional features near the Au pad resembled interference patterns, alternately dark and bright bars. Solid-state diffusion theory cannot be used to explain why such a thick compound formed within milliseconds at room temperature. The major formation of metallurgical bonds was attributed to ultrasonic cyclic vibration

  5. Segregation Behaviour of Third Generation Advanced High-Strength Mn-Al Steels

    Directory of Open Access Journals (Sweden)

    A. Grajcar

    2012-04-01

    Full Text Available The paper addresses the macro- and microsegregation of alloying elements in the new-developed Mn-Al TRIP steels, which belong to the third generation of advanced high-strength steels (AHSS used in the automotive industry. The segregation behaviour both in the as-cast state and after hot forging was assessed in the macro scale by OES and by EDS measurements in different structural constituents. The structural investigations were carried out using light and scanning electron microscopy. A special attention was paid to the effect of Nb microaddition on the structure and the segregation of alloying elements. The tendency of Mn and Al to macrosegregation was found. It is difficult to remove in Nb-free steels. Microsegregation of Mn and Al between austenite and ferritic structural constituents can be removed.

  6. High Density Hydrogen Storage System Demonstration Using NaAlH4 Based Complex Compound Hydrides

    Energy Technology Data Exchange (ETDEWEB)

    Daniel A. Mosher; Xia Tang; Ronald J. Brown; Sarah Arsenault; Salvatore Saitta; Bruce L. Laube; Robert H. Dold; Donald L. Anton

    2007-07-27

    This final report describes the motivations, activities and results of the hydrogen storage independent project "High Density Hydrogen Storage System Demonstration Using NaAlH4 Based Complex Compound Hydrides" performed by the United Technologies Research Center under the Department of Energy Hydrogen Program, contract # DE-FC36-02AL67610. The objectives of the project were to identify and address the key systems technologies associated with applying complex hydride materials, particularly ones which differ from those for conventional metal hydride based storage. This involved the design, fabrication and testing of two prototype systems based on the hydrogen storage material NaAlH4. Safety testing, catalysis studies, heat exchanger optimization, reaction kinetics modeling, thermochemical finite element analysis, powder densification development and material neutralization were elements included in the effort.

  7. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    Science.gov (United States)

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-05

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  8. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  9. Effects of Electromagnetic Stirring on the Microstructure and High-Temperature Mechanical Properties of a Hyper-eutectic Al-Si-Cu-Ni Alloy

    Science.gov (United States)

    Jang, Youngsoo; Choi, Byounghee; Kang, Byungkeun; Hong, Chun Pyo

    2015-02-01

    A liquid treatment method by electromagnetic stirring was applied to a hyper-eutectic Al-15wt pctSi-4wt pctCu-3wt pctNi alloy for the piston manufacturing with diecasting process in order to improve high-temperature mechanical properties of the piston heads. The mechanical properties, such as hardness, high-temperature tensile stress, thermal expansion, and high-temperature relative wear resistance, were estimated using the specimens taken from the liquid-treated diecast products, and the results were compared with those of a conventional metal-mold-cast piston.

  10. Stress/strain/time properties of highly compacted bentonite

    International Nuclear Information System (INIS)

    Pusch, R.

    1983-05-01

    In this paper, a recently developed creep theory based on statistical mechanics has been used to analyze a number of experimental creep curves, the conclusion being that the creep behavior of dense MX-80 bentonite is in agreement with the physical model, and that the average bond strength is within the hydrogen bond region. The latter conclusion thus indicates that interparticle displacements leading to macroscopic creep takes place in interparticle and intraparticle water lattices. These findings were taken as a justification to apply the creep theory to a prediction of the settlement over a one million year period. It gave an estimated settlement of 1 cm at maximum, which is of no practical significance. The thixotropic and viscous properties of highly compacted bentonite present certain difficulties in the determination and evaluation of the stress/strain/time parameters that are required for ordinary elastic and elasto-plastic analyses. Still, these parameters could be sufficiently well identified to allow for a preliminary estimation of the stresses induced in the metal canisters by slight rock displacements. The analysis, suggests that a 1 cm rapid shear perpendicular to the axes of the canisters can take place without harming them. (author)

  11. Biochemical basis of the high resistance to oxidative stress in ...

    Indian Academy of Sciences (India)

    Unknown

    581. Keywords. Apoptosis; D. discoideum; oxidative stress; antioxidant enzymes; lipid peroxidation ..... multiple toxic effects of oxidative stress that is related to several pathological conditions ... culture. This work was supported by a grant to RB.

  12. Characterization of residual stresses in heat treated Ti-6Al-4V forgings by machining induced distortion

    Directory of Open Access Journals (Sweden)

    Werner E.

    2010-06-01

    Full Text Available To provide a solid base for improved material exploitation in dimensioning calculations it is necessary to determine the stress state in the part prior to service loading. In order to achieve higher material strength at elevated temperatures, the surface temperature gradient with respect to time has to be sufficiently high during heat treatment. This results in non-negligable residual stresses that can reduce the allowable load level upon which yielding occurs. For titanium alloys there are two common heat treatments, namely solution treatment and mill annealing. The latter one is the method of choice within the presented project. Mill annealing is utilized in order to significantly reduce the residual stresses in the parts without loosing much of the improved strength at elevated temperatures. Quantification of residual stresses is done by solving an inverse problem. From the measurement of distortion, induced by dividing the investigated part, the residual stress state can be calculated via analytical modeling or correlation with finite element models. To assure a minimum perturbation of the residual stress state during specimen production, dividing of the part is accomplished by electric discharge machining. The parts of interest are v-shaped prisms with a length of approximatly 450 mm and a thickness in the cross sectional area from about 20 mm to 45 mm. Figure 1(a shows the forged part and 1(b the dimensions of the cross section in millimeters as well as the material properties considered in the finite element model. The heat exchange between the part and the environment is modelled as heat transfer by convection superimposed with heat radiation. Since the parts are exposed to air during forging and heat treatment, the surface develops a strongly adhesive oxide layer, the so called alpha-case. After forging the parts are cooled in air and heat treated at a temperature of 720° C for a duration of 120 min. Subsequent air cooling and

  13. Oxidation Behavior of AlN/h-BN Nano Composites at High Temperature

    International Nuclear Information System (INIS)

    Jin Haiyun; Huang Yinmao; Feng Dawei; He Bo; Yang Jianfeng

    2011-01-01

    Both AlN/ nano h-BN composites and AlN/ micro h-BN composites were fabricated. The high temperature oxidation behaviors were investigated at 1000deg. C and 1300deg. C using a cycle-oxidation method. The results showed that there were little changes of both nano composites and monolithic AlN ceramic at temperature of 1000deg. C. And at 1300deg. C, the oxidation dynamics curve of composites could be divided into two courses: a slowly weight increase and a rapid weight decrease, but the oxidation behavior of nano composites was better than micro composites. It was due to that the uniform distribution of oxidation production (Al 18 B 4 O 33 ) surround the AlN grains in nano composites and the oxidation proceeding was retarded. The XRD analysis and SEM observations showed that there was no BN remained in the composites surface after 1300deg. C oxidation and the micropores remain due to the vaporizing of B 2 O 3 oxidized by BN.

  14. High-rate sputter deposition of NiAl on sapphire fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

    2002-07-01

    Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

  15. Highly selective rhodamine-based fluorescence turn-on chemosensor for Al3+ ion

    Science.gov (United States)

    Manjunath, Rangasamy; Kannan, Palaninathan

    2018-05-01

    A new rhodamine-based colorimetric and fluorescent turn-on chemosensor (L) has been designed and synthesized for selective and sensitive detection of Al3+ ion. The sensing behavior toward metal ion was investigated by UV/Vis and fluorescence spectroscopy. Upon addition of Al3+ ion to solution of L provided a visual color change as well as significantly fluorescent enhancement, while other metal ions including Na+, Mg2+, K+, Mn2+, Fe3+, Ni2+, Cu2+, Zn2+, Pb2+, Cd2+ and Hg2+ ions fails to generate a distinct color and spectral changes, the distinct color change and rapid switch-on fluorescence also provide naked eye detection for Al3+ ion. The mechanism involved equilibrium between non-fluorescent spirocyclic form and highly fluorescent ring open form process was utilized and 1:2 stoichiometry for L-Al3+ complex formed with an association constant of 1.42 × 103 M-1. Moreover, chemosensor L was applied for living cell imaging and confirmed that can be used as a fluorescent probe for monitoring Al3+ ion in living cells.

  16. High-brightness beamline for x-ray spectroscopy at the ALS

    Energy Technology Data Exchange (ETDEWEB)

    Perera, R.C.C.; Jones, G. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States); Lindle, D.W. [Univ. of Nevada, Las Vegas, NV (United States)

    1997-04-01

    Beamline 9.3.1 at the Advanced Light Source (ALS) is a windowless beamline, covering the 1-6 keV photon-energy range, designed to achieve the goals of high energy resolution, high flux, and high brightness at the sample. When completed later this year, it will be the first ALS monochromatic hard x-ray beamline, and its brightness will be an order of magnitude higher than presently available in this energy range. In addition, it will provide flux and resolution comparable to any other beamline now in operation. To achieve these goals, two technical improvements, relative to existing x-ray beamlines, were incorporated. First, a somewhat novel optical design for x-rays, in which matched toroidal mirrors are positioned before and after the double-crystal monochromator, was adopted. This configuration allows for high resolution by passing a collimated beam through the monochromator, and for high brightness by focusing the ALS source on the sample with unit magnification. Second, a new {open_quotes}Cowan type{close_quotes} double-crystal monochromator based on the design used at NSLS beamline X-24A was developed. The measured mechanical precision of this new monochromator shows significant improvement over existing designs, without using positional feedback available with piezoelectric devices. Such precision is essential because of the high brightness of the radiation and the long distance (12 m) from the source (sample) to the collimating (focusing) mirror. This combination of features will provide a bright, high resolution, and stable x-ray beam for use in the x-ray spectroscopy program at the ALS.

  17. Biochemical basis of the high resistance to oxidative stress

    Indian Academy of Sciences (India)

    Aerobic organisms experience oxidative stress due to generation of reactive oxygen species during normal aerobic metabolism. In addition, several chemicals also generate reactive oxygen species which induce oxidative stress. Thus oxidative stress constitutes a major threat to organisms living in aerobic environments.

  18. Guiding of low-energy electrons by highly ordered Al2 O3 nanocapillaries

    DEFF Research Database (Denmark)

    Milosavljević, A.R.; Víkor, G.; Pešić, Z.D.

    2007-01-01

    We report an experimental study of guided transmission of low-energy (200-350 eV) electrons through highly ordered Al2 O3 nanocapillaries with large aspect ratio (140 nm diameter and 15 μm length). The nanochannel array was prepared using self-ordering phenomena during a two-step anodization...... process of a high-purity aluminum foil. The experimental results clearly show the existence of the guiding effect, as found for highly charged ions. The guiding of the electron beam was observed for tilt angles up to 12°. As seen for highly charged ions, the guiding efficiency increases with decreasing...

  19. High performance W-AlN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qi-Chu [School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shen, Y.G. [Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong (Hong Kong)

    2004-01-25

    High solar performance W-AlN cermet solar coatings were designed using a numerical computer model and deposited experimentally. In the numerical calculations aluminium oxynitride (AlON) was used as ceramic component. The dielectric function and then complex refractive index of W-AlON cermet materials were calculated using the Sheng's approximation. The layer thickness and W metal volume fraction were optimised to achieve maximum photo-thermal conversion efficiency for W-AlON cermet solar coatings on an Al reflector with a surface AlON ceramic anti-reflection layer. Optimisation calculations show that the W-AlON cermet solar coatings with two and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimised calculated AlON/W-AlON/Al solar coating film with two cermet layers has a high solar absorptance of 0.953 and a low hemispherical emittance of 0.051 at 80C for a concentration factor of 2. The AlN/W-AlN/Al solar selective coatings with two cermet layers were deposited using two metal target direct current magnetron sputtering technology. During the deposition of W-AlN cermet layer, both Al and W targets were run simultaneously in a gas mixture of argon and nitrogen. By substrate rotation a multi-sub-layer system consisting of alternating AlN ceramic and W metallic sub-layers was deposited that can be considered as a macro-homogeneous W-AlN cermet layer. A solar absorptance of 0.955 and nearly normal emittance of 0.056 at 80C have been achieved for deposited W-AlN cermet solar coatings.

  20. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  1. Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

    Science.gov (United States)

    Lee, Jonathan A.

    2000-01-01

    A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

  2. Primitive Path Analysis and Stress Distribution in Highly Strained Macromolecules.

    Science.gov (United States)

    Hsu, Hsiao-Ping; Kremer, Kurt

    2018-01-16

    Polymer material properties are strongly affected by entanglement effects. For long polymer chains and composite materials, they are expected to be at the origin of many technically important phenomena, such as shear thinning or the Mullins effect, which microscopically can be related to topological constraints between chains. Starting from fully equilibrated highly entangled polymer melts, we investigate the effect of isochoric elongation on the entanglement structure and force distribution of such systems. Theoretically, the related viscoelastic response usually is discussed in terms of the tube model. We relate stress relaxation in the linear and nonlinear viscoelastic regimes to a primitive path analysis (PPA) and show that tension forces both along the original paths and along primitive paths, that is, the backbone of the tube, in the stretching direction correspond to each other. Unlike homogeneous relaxation along the chain contour, the PPA reveals a so far not observed long-lived clustering of topological constraints along the chains in the deformed state.

  3. Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

    2017-07-01

    In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

  4. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  5. The Al Effects of Co-Free and V-Containing High-Entropy Alloys

    Directory of Open Access Journals (Sweden)

    Songqin Xia

    2017-01-01

    Full Text Available In this study, five-component high-entropy alloys (HEAs AlxCrFeNiV (where x denotes the molar ratio, x = 0, 0.1, 0.3, 0.5, 0.75, 1, and 1.5 were prepared using an arc-melting furnace. The effects of the addition of the Al on the crystal structures were investigated using X-ray diffraction (XRD, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Also, two non-equiatomic ratio HEAs, AlxCrFeNiV (x = 0.3, and 0.5, were systematically studied through the use of various characterization methods in the as-cast state. The Al0.3CrFeNiV alloy displayed typical duplex body-centered cubic (BCC structures, including disordered BCC (A2, and NiAl-type ordered BCC (B2 phases. Meanwhile, in regard to the Al0.5CrFeNiV alloy, this alloy was found to contain an unknown phase which was enriched in Cr and V, as well as the coherent A2/B2 phases. Both of these alloys displayed very high yield and fracture strengths. However, their compression fracture strains were approximately 10%. Also, the fracture surfaces showed mainly cleavage fracture modes.

  6. Observations of hydrotectonic stress/strain events at a basement high at the Nicoya outer rise

    Science.gov (United States)

    Tryon, M. D.; Brown, K. M.

    2005-12-01

    There is substantial and growing evidence from heat flow and coring investigations that the oceanic plate off Costa Rica is highly hydrologically active and that this activity is responsible for one of the most anomalously cold thermal environments encountered in the oceanic environment. Recent work by Fisher, et al. has identified limited regions above certain topographic highs with extremely high heat flows. Pore water profiles from cores above these thinly sedimented basement highs suggest upward flow on the order of ~1 cm/yr. These highs may be the principal regions of out-flow from the basement in this region and, thus, can potentially be used to constrain the general level of hydrologic activity. The nine Chemical and Aqueous Transport (CAT) meters we deployed at one of the highest heatflow sites provide a temporal record of both in-flow and out-flow of aqueous fluids at rates as low as 0.1 mm/yr. Our objective was to provide a direct measurement of long term flow rates to address the following questions: (1) What are the characteristic fluid fluxes at basement highs of the low heat flow region of the northern Costa Rican incoming plate, and (2) is this flow temporally variable? The results of the instrument deployments agree quite closely in general with the coring results in that the background rates are on the order of 1 cm/yr or less. There is, however, considerable detail in the temporal records which suggest small scale tectonic stress transients causing temporary increases in flow rate. While this is certainly not an area of major tectonic activity, the site is located at the top of the outer rise where one would expect bending-related stress and fault reactivation to occur. The CAT meters are capable of detecting minute strain events in the underlying sediments and therefore may be detecting small localized strain events. Two periods of increased flow lasting a few weeks each occur during the 5 month deployment and are indicated on all of the

  7. Irradiation of Wrought FeCrAl Tubes in the High Flux Isotope Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Linton, Kory D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Field, Kevin G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Petrie, Christian M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-09-01

    The Advanced Fuels Campaign within the Nuclear Technology Research and Development program of the Department of Energy Office of Nuclear Energy is seeking to improve the accident tolerance of light water reactors. Alumina-forming ferritic alloys (e.g., FeCrAl) are one of the leading candidate materials for fuel cladding to replace traditional zirconium alloys because of the superior oxidation resistance of FeCrAl. However, there are still some unresolved questions regarding irradiation effects on the microstructure and mechanical properties of FeCrAl at end-of-life dose levels. In particular, there are concerns related to irradiation-induced embrittlement of FeCrAl alloys due to secondary phase formation. To address this issue, Oak Ridge National Laboratory has developed a new experimental design to irradiate shortened cladding tube specimens with representative 17×17 array pressurized water reactor diameter and thickness in the High Flux Isotope Reactor (HFIR) under relevant temperatures (300–350°C). Post-irradiation examination will include studies of dimensional change, microstructural changes, and mechanical performance. This report briefly summarizes the capsule design concept and the irradiation test matrix for six rabbit capsules. Each rabbit contains two FeCrAl alloy tube specimens. The specimens include Generation I and Generation II FeCrAl alloys with varying processing conditions, Cr concentrations, and minor alloying elements. The rabbits were successfully assembled, welded, evaluated, and delivered to the HFIR along with a complete quality assurance fabrication package. Pictures of the rabbit assembly process and detailed dimensional inspection of select specimens are included in this report. The rabbits were inserted into HFIR starting in cycle 472 (May 2017).

  8. Measurement of Young’s modulus and residual stress of atomic layer deposited Al2O3 and Pt thin films

    Science.gov (United States)

    Purkl, Fabian; Daus, Alwin; English, Timothy S.; Provine, J.; Feyh, Ando; Urban, Gerald; Kenny, Thomas W.

    2017-08-01

    The accurate measurement of mechanical properties of thin films is required for the design of reliable nano/micro-electromechanical devices but is increasingly challenging for thicknesses approaching a few nanometers. We apply a combination of resonant and static mechanical test structures to measure elastic constants and residual stresses of 8-27 nm thick Al2O3 and Pt layers which have been fabricated through atomic layer deposition. Young’s modulus of poly-crystalline Pt films was found to be reduced by less than 15% compared to the bulk value, whereas for amorphous Al2O3 it was reduced to about half of its bulk value. We observed no discernible dependence of the elastic constant on thickness or deposition method for Pt, but the use of plasma-enhanced atomic layer deposition was found to increase Young’s modulus of Al2O3 by 10% compared to a thermal atomic layer deposition. As deposited, the Al2O3 layers had an average tensile residual stress of 131 MPa. The stress was found to be higher for thinner layers and layers deposited without the help of a remote plasma. No residual stress values could be extracted for Pt due to insufficient adhesion of the film without an underlying layer to promote nucleation.

  9. The Role of Surface Protection for High-Temperature Performance of TiAl Alloys

    Science.gov (United States)

    Schütze, Michael

    2017-12-01

    In the temperature range where TiAl alloys are currently being used in jet engine and automotive industries, surface reaction with the operating environment is not yet a critical issue. Surface treatment may, however, be needed in order to provide improved abrasion resistance. Development routes currently aim at a further increase in operation temperatures in gas turbines up to 800°C and higher, and in automotive applications for turbocharger rotors, even up to 1050°C. In this case, oxidation rates may reach levels where significant metal consumption of the load-bearing cross-section can occur. Another possibly even more critical issue can be high-temperature-induced oxygen and nitrogen up-take into the metal subsurface zone with subsequent massive ambient temperature embrittlement. Solutions for these problems are based on a deliberate phase change of the metal subsurface zone by diffusion treatments and by using effects such as the halogen effect to change the oxidation mechanism at high temperatures. Other topics of relevance for the use of TiAl alloys in high-temperature applications can be high-temperature abrasion resistance, thermal barrier coatings on TiAl and surface quality in additive manufacturing, in all these cases-focusing on the role of the operation environment. This paper addresses the recent developments in these areas and the requirements for future work.

  10. Residual stress in a thick section high strength T-butt weld

    International Nuclear Information System (INIS)

    Pearce, S.V.; Linton, V.M.; Oliver, E.C.

    2008-01-01

    Residual stresses in a structure are generated as a result of the various fabrication and welding processes used to make the component. Being able to quantify these residual stresses is a key step in determining the continuing integrity of a structure in service. In this work, the residual stresses around a high strength, quenched and tempered steel T-butt web to curved plate weld have been measured using neutron strain scanning. The results show that the residual stresses near the weld were dominated by the welding residual stresses, while the stresses further from the weld were dominated by the bending residual stresses. The results suggest that the combination of welding-induced residual stress and significant pre-welding residual stress, as in the case of a thick bent section of plate can significantly alter the residual stress profile from that in a flat plate

  11. High resolution microstructure characterization of the interface between cold sprayed Al coating and Mg alloy substrate

    International Nuclear Information System (INIS)

    Wang, Qiang; Qiu, Dong; Xiong, Yuming; Birbilis, Nick; Zhang, Ming-Xing

    2014-01-01

    High-resolution transmission electron microscopy (HR-TEM) has validated the intimate metallurgical (atomic) bond formed along the interface of a cold-sprayed Al coating upon an Mg-alloy (AZ91) substrate. The compressive impact led to the formation of nanostructured layers of about 300–500 nm into the substrate. A highly distorted lattice structure with the inclusion of small amorphous zones was observed at the periphery of the particle/substrate interface, as a result of adiabatic shear plastic deformation at a high strain rate.

  12. Some observations on the high temperature oxidation behaviour of plasma sprayed Ni3Al coatings

    International Nuclear Information System (INIS)

    Singh, H.; Prakash, S.; Puri, D.

    2007-01-01

    High temperature oxidation resistance of the superalloys can be greatly enhanced by plasma sprayed coatings and this is a growing industry of considerable economic importance. The purpose of these coatings is to form long-lasting oxidation protective scales. In the current investigation, Ni 3 Al powder was prepared by mechanical mixing of pure nickel and aluminium powders in a ball mill. Subsequently Ni 3 Al powder was deposited on three Ni-base superalloys: Superni 600, Superni 601 and Superni 718 and, one Fe-base superalloy, Superfer 800H by shrouded plasma spray process. Oxidation studies were conducted on the coated superalloys in air at 900 deg. C under cyclic conditions for 50 cycles. Each cycle consisted of 1 h heating followed by 20 min of cooling in air. The thermogravimetric technique was used to approximate the kinetics of oxidation. All the coated superalloys nearly followed parabolic rate law of oxidation. X-ray diffraction, SEM/EDAX and EPMA techniques were used to analyse the oxidation products. The Ni 3 Al coating was found to be successful in maintaining its adherence to the superalloy substrates in all the cases. The oxide scales formed on the oxidised coated superalloys were found to be intact and spallation-free. XRD analysis revealed the presence of phases like NiO, Al 2 O 3 and NiAl 2 O 4 in the oxide scales, which are reported as protective oxides against high temperature oxidation. The XRD results were further supported by SEM/EDAX and EPMA

  13. Defect engineering for 650 nm high-power AlGaInP laser diodes

    International Nuclear Information System (INIS)

    Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

    2006-01-01

    To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

  14. High Porosity Alumina as Matrix Material for Composites of Al-Mg Alloys

    International Nuclear Information System (INIS)

    Gömze, L A; Egész, Á; Gömze, L N; Ojima, F

    2013-01-01

    The sophisticated industry and technologies require higher and higher assumptions against mechanical strength and surface hardness of ceramic reinforced metal alloys and metal matrix composites. Applying the well-known alumina powders by dry pressing technology and some special pore-forming additives and sintering technology the authors have successfully developed a new, high porosity alumina matrix material for composites of advenced Al-Mg alloys. The developed new matrix material have higher than 30% porosity, with homogenous porous structure and pore sizes from few nano up to 2–3 mm depending on the alloys containments. Thanks to the used materials and the sintering conditions the authors could decrease the wetting angles less than 90° between the high porosity alumina matrix and the Al-Mg alloys. Applied analytical methods in this research were laser granulometry, scanning electron microscopy, and X-ray diffraction. Digital image analysis was applied to microscopy results, to enhance the results of transformation

  15. Fe-Al2O3 nanocomposites prepared by high-energy ball milling

    DEFF Research Database (Denmark)

    Linderoth, Søren; Pedersen, M.S.

    1994-01-01

    Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x(upsilon) alm......Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x...

  16. Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

    Science.gov (United States)

    Cörekçi, S; Usanmaz, D; Tekeli, Z; Cakmak, M; Ozçelik, S; Ozbay, E

    2008-02-01

    We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

  17. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

    Science.gov (United States)

    Gozu, Shin-ichiro; Mozume, Teruo

    2018-05-01

    InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.

  18. High-temperature γ (FCC/γ′ (L12 Co-Al-W based superalloys

    Directory of Open Access Journals (Sweden)

    Knop Matthias

    2014-01-01

    Full Text Available Interim results from the development of a polycrystalline Co-Al-W based superalloy are presented. Cr has been added to provide oxidation resistance and Ni has then been added to widen and stabilise the γ′ phase field. The alloy presented has a solvus of 1010 °C and a density of 8.7 g cm−3. The room temperature flow stress is over 1000 MPa and this reduces dramatically above 800 °C. The flow stress anomaly is observed. A microstructure with both ∼ 50 nm γ′ produced on cooling and larger 100–200 nm γ′ can be obtained. Isothermal oxidation at 800 °C in air for 200 h gave a mass gain of 0.96 mg cm−2. After hot deformation in the 650–850 °C temperature range, both anti phase boundaries (APBs and stacking faults could be observed. An APB energy of 71 mJ m−2 was measured, which is comparable to that found in commercial nickel superalloys.

  19. High carotenoids content can enhance resistance of selected Pinctada fucata families to high temperature stress.

    Science.gov (United States)

    Meng, Zihao; Zhang, Bo; Liu, Baosuo; Li, Haimei; Fan, Sigang; Yu, Dahui

    2017-02-01

    Carotenoids are a class of natural antioxidants widely found in aquatic, and they have significant effects on the growth, survival, and immunity of these organisms. To investigate the mechanisms of carotenoids in high temperature resistance, we observed the immune response of selected pearl oyster Pinctada fucata (Akoya pearl oyster) families with different carotenoids contents to high temperature stress. The results indicated that the survival rate (SR) of P. fucata decreased significantly with increase in temperature from 26 °C to 34 °C and with the decrease of total carotenoids content (TCC); when the TCC was higher, the SR tended to be higher. TCC and total antioxidant capacity (TAC) decreased significantly at 30 °C with increasing stress time. Correlation analysis indicated that TAC was positively and linearly correlated with TCC, and SR was S-type correlated with TCC and TAC. Immune analysis indicated that levels of superoxide dismutase (SOD), catalase (CAT), and malondialdehyde (MDA) in selected families (with higher TCC) under temperature stress (at 30 °C) were generally significantly lower than in the control group (with lowest TCC) and from 0 to 96 h, the levels of each of these substances varied significantly. Levels of SOD, CAT, and MDA within each family first rose from 0 to 3 h, then decreased to their lowest point after 24 h, and then rose again to their highest levels at 96 h. When TCC was higher, the levels of SOD, CAT, and MDA tended to be lower. These findings indicated that carotenoids play an important role in improving survival rates of P. fucata under high temperature stress by enhancing animals' antioxidant system, and could serve as an index for breeding stress-resistant lines in selective breeding practices. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. The effect of microalloying B on the High temperature mechanical properties of Ti3Al

    International Nuclear Information System (INIS)

    Newkirk, J.W.; Feldewerth, G.B.

    1989-01-01

    This paper presents a study of the effect of adding boron to Ti 3 Al on the microstructure and high temperature tensile properties. Boron caused a large grain refinement that dominated the tensile properties at all temperatures. Particles of Ti 2 B were found in all of the boron containing alloys. TiB was found only at concentrations of 0.1% B or more

  1. Influence of refining process on the porosity of high pressure die casting alloy Al-Si

    Directory of Open Access Journals (Sweden)

    A.W. Orlowicz

    2009-04-01

    Full Text Available This study presents research results of the influence that refining and transfer of AlSi12S alloy on the porosity of high pressure diecastings.Tests were conducted under production conditions of Die-casting Foundry META-ZEL Sp z o.o. The operation of refining was conducted in a melting furnace, with the use of an FDU Mini Degasser. Decay of the refining effect was assessed by evaluating the porosity content and metallographic examination.

  2. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

    Energy Technology Data Exchange (ETDEWEB)

    Glaab, Johannes, E-mail: johannes.glaab@fbh-berlin.de; Ploch, Christian; Kelz, Rico; Stölmacker, Christoph; Lapeyrade, Mickael; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Mehnke, Frank; Kuhn, Christian; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany)

    2015-09-07

    The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm{sup 2}, 150 A/cm{sup 2}, and 225 A/cm{sup 2}. In addition, the heat sink temperature was varied between 15 °C and 80 °C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current.

  3. Pitting and Stress Corrosion Cracking Susceptibility of Nanostructured Al-Mg Alloys in Natural and Artificial Environments

    Science.gov (United States)

    Sharma, Mala M.; Ziemian, Constance W.

    2008-12-01

    The stress corrosion cracking (SCC) behavior of two developmental nanocrystalline 5083 alloys with varied composition and processing conditions was studied. The results were compared to a commercial aluminum AA 5083 (H111) alloy. The pitting densities, size and depths, and residual tensile strengths were measured after alternate immersion in artificial seawater and atmospheric exposure under different loading conditions. Optical and scanning electron microscopy (SEM) with EDX was used to analyze the fracture surfaces of failed specimen after removal at selected intervals and tensile testing. One of the nanostructured Al-Mg alloys exhibited significantly superior pitting resistance when compared to conventional microstructured AA 5083. Under conditions where pitting corrosion showed up as local tunnels toward phase inclusions, transgranular cracking was observed, whereas under conditions when pitting corrosion evolved along grain boundaries, intergranular cracking inside the pit was observed. Pit initiation resistance of the nano alloys appears to be better than that of the conventional alloys. However, long-term pit propagation is a concern and warrants further study. The objective of this investigation was to obtain information regarding the role that ultra-fine microstructures play in their degradation in marine environments and to provide insight into the corrosion mechanisms and damage processes of these alloys.

  4. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

    International Nuclear Information System (INIS)

    Glaab, Johannes; Ploch, Christian; Kelz, Rico; Stölmacker, Christoph; Lapeyrade, Mickael; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Einfeldt, Sven; Weyers, Markus; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Kneissl, Michael

    2015-01-01

    The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm 2 , 150 A/cm 2 , and 225 A/cm 2 . In addition, the heat sink temperature was varied between 15 °C and 80 °C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current

  5. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  6. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-01-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

  7. Preliminary study of the characteristics of a high Mg containing Al-Mg-Si alloy

    International Nuclear Information System (INIS)

    Yan, F; McKay, B J; Fan, Z; Chen, M F

    2012-01-01

    An Al-20Mg-4Si high Mg containing alloy has been produced and its characteristics investigated. The as-cast alloy revealed primary Mg 2 Si particles evenly distributed throughout an α-Al matrix with a β-Al 3 Mg 2 fully divorced eutectic phase observed in interdendritic regions. The Mg 2 Si particles displayed octahedral, truncated octahedral, and hopper morphologies. Additions of Sb, Ti and Zr had a refining influence reducing the size of the Mg 2 Si from 52 ± 4 μm to 25 ± 0.1 μm, 35 ± 1 μm and 34 ± 1 μm respectively. HPDC tensile test samples could be produced with a 0.6 wt.% Mn addition which prevented die soldering. Solution heating for 1 hr was found to dissolve the majority of the Al 3 Mg 2 eutectic phase with no evidence of any effect on the primary Mg 2 Si. Preliminary results indicate that the heat treatment has a beneficial effect on the elongation and the UTS.

  8. Static and kinetic friction of granite at high normal stress

    Science.gov (United States)

    Byerlee, J.D.

    1970-01-01

    Frictional sliding on ground surfaces of granite, angle of sliding planes 30?? and 45??, was investigated as a function of confining pressure. Over the normal stress range of 2-12 kb, the static frictional shear stress ??s follows the relationship ??s = 0??5 + 0?? ??n and the kinetic frictional shear stress ??k was calculated to be ??k = 0??25 + 0??47 ??n. ?? 1970.

  9. High glucose-mediated oxidative stress impairs cell migration.

    Directory of Open Access Journals (Sweden)

    Marcelo L Lamers

    Full Text Available Deficient wound healing in diabetic patients is very frequent, but the cellular and molecular causes are poorly defined. In this study, we evaluate the hypothesis that high glucose concentrations inhibit cell migration. Using CHO.K1 cells, NIH-3T3 fibroblasts, mouse embryonic fibroblasts and primary skin fibroblasts from control and diabetic rats cultured in 5 mM D-glucose (low glucose, LG, 25 mM D-glucose (high glucose, HG or 25 mM L-glucose medium (osmotic control--OC, we analyzed the migration speed, protrusion stability, cell polarity, adhesion maturation and the activity of the small Rho GTPase Rac1. We also analyzed the effects of reactive oxygen species by incubating cells with the antioxidant N-Acetyl-Cysteine (NAC. We observed that HG conditions inhibited cell migration when compared to LG or OC. This inhibition resulted from impaired cell polarity, protrusion destabilization and inhibition of adhesion maturation. Conversely, Rac1 activity, which promotes protrusion and blocks adhesion maturation, was increased in HG conditions, thus providing a mechanistic basis for the HG phenotype. Most of the HG effects were partially or completely rescued by treatment with NAC. These findings demonstrate that HG impairs cell migration due to an increase in oxidative stress that causes polarity loss, deficient adhesion and protrusion. These alterations arise, in large part, from increased Rac1 activity and may contribute to the poor wound healing observed in diabetic patients.

  10. High-resolution stress measurements for microsystem and semiconductor applications

    Science.gov (United States)

    Vogel, Dietmar; Keller, Juergen; Michel, Bernd

    2006-04-01

    Research results obtained for local stress determination on micro and nanotechnology components are summarized. It meets the concern of controlling stresses introduced to sensors, MEMS and electronics devices during different micromachining processes. The method bases on deformation measurement options made available inside focused ion beam equipment. Removing locally material by ion beam milling existing stresses / residual stresses lead to deformation fields around the milled feature. Digital image correlation techniques are used to extract deformation values from micrographs captured before and after milling. In the paper, two main milling features have been analyzed - through hole and through slit milling. Analytical solutions for stress release fields of in-plane stresses have been derived and compared to respective experimental findings. Their good agreement allows to settle a method for determination of residual stress values, which is demonstrated for thin membranes manufactured by silicon micro technology. Some emphasis is made on the elimination of main error sources for stress determination, like rigid body object displacements and rotations due to drifts of experimental conditions under FIB imaging. In order to illustrate potential application areas of the method residual stress suppression by ion implantation is evaluated by the method and reported here.

  11. X-ray residual stress measurement and its variation during plane bending fatigue and sliding wear processes in TiC, TiN, TiB2 and Al2O3 coated carbon steels

    International Nuclear Information System (INIS)

    Endoh, Takashi; Idemitsu, Kohji; Kawakami, Mamoru

    1993-01-01

    The development of ceramic coating to metals was stimulated by the need for high temperature, wear and corrosion resistant materials. Recently TiC, TiN, TiB 2 and Al 2 O 3 are used as ceramic coating materials. In the present study, the X-ray method was successfully applied to measure the residual stress distribution in their ceramics coated steels. The X-ray elastic constants were determined and compared with the mechanically measured values. And plane bending and sliding wear tests were carried out. The X-ray method was successfully applied to measure the residual stress changes during fatigue and wear processes. The relationship between the change of residual stress and damage accumulation was investigated. (author)

  12. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  13. High-Throughput Investigation of a Lead-Free AlN-Based Piezoelectric Material, (Mg,Hf)xAl1-xN.

    Science.gov (United States)

    Nguyen, Hung H; Oguchi, Hiroyuki; Van Minh, Le; Kuwano, Hiroki

    2017-06-12

    We conducted a high-throughput investigation of the fundamental properties of (Mg,Hf) x Al 1-x N thin films (0 piezoelectric materials. For the high-throughput investigation, we prepared composition-gradient (Mg,Hf) x Al 1-x N films grown on a Si(100) substrate at 600 °C by cosputtering AlN and MgHf targets. To measure the properties of the various compositions at different positions within a single sample, we used characterization techniques with spatial resolution. X-ray diffraction (XRD) with a beam spot diameter of 1.0 mm verified that Mg and Hf had substituted into the Al sites and caused an elongation of the c-axis of AlN from 5.00 Å for x = 0 to 5.11 Å for x = 0.24. In addition, the uniaxial crystal orientation and high crystallinity required for piezoelectric materials to be used as application devices were confirmed. The piezoelectric response microscope indicated that this c-axis elongation increased the piezoelectric coefficient almost linearly from 1.48 pm/V for x = 0 to 5.19 pm/V for x = 0.24. The dielectric constants of (Mg,Hf) x Al 1-x N were investigated using parallel plate capacitor structures with ∼0.07 mm 2 electrodes and showed a slight increase by substitution. These results verified that (Mg,Hf) x Al 1-x N is a promising material for piezoelectric-based application devices, especially for vibrational energy harvesters.

  14. High Temperature Sliding Wear of NiAl-based Coatings Reinforced by Borides

    Directory of Open Access Journals (Sweden)

    Oleksandr UMANSKYI

    2016-05-01

    Full Text Available The development of composite materials (CM in the systems “metal-refractory compound” is one of the up-to-date trends in design of novel materials aimed at operating under the conditions of significant loads at high temperature. To design such material, NiAl, which is widely used for deposition of protective coatings on parts of gas-turbine engines, was selected for a matrix. To strengthen a NiAl under the conditions of intense wear and a broad temperature range (up to 1000 °C, it is reasonable to add refractory inclusions. Introduction of refractory borides into matrix leads to a marked increase in metal wear resistance. In order to research the behavior of the designed composites at high temperatures and to study the influence of oxides on the friction processes, the authors carried out high temperature oxidation of CM of the above systems at 1000 °С for 90 min. It was determined that all of the composites were oxidized selectively and that the thickness of oxide layers formed on the boride inclusions is 3 – 7 times that on the oxides formed on the NiAl matrix. The mechanism of wear of gas-thermal coatings of the NiAl – МеB2 systems was studied for conditions of high temperature tribotests using the «pin-on-disc» technique. The obtained results indicate that introduction of TiB2, CrB2 and ZrB2 leads to their more intense oxidation during high temperature tribotests as compared to the matrix. The oxides formed on refractory borides act as solid lubricants, which promote a decrease in wear of the contact friction pairs. For more detailed investigation of the effect of tribo-oxidation products on the friction processes, tribotests were conducted for prior oxidized (at 900 °С coatings NiAl – 15 wt.% CrB2 (TiB2, ZrB2.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.8093

  15. What characterizes persons with high levels of perceived stress in Denmark? A national representative study.

    Science.gov (United States)

    Nielsen, Line; Curtis, Tine; Kristensen, Tage S; Rod Nielsen, Naja

    2008-06-01

    Stress is a growing public health problem, but there are only a few studies with national representative samples on the occurrence of stress. The aim of this study was to assess the level of stress, measured by the Perceived Stress Scale, in Denmark, and to identify and characterize the group with high levels of stress by factors measured at both the individual and neighbourhood levels in a national representative sample of the Danish population. The 10,022 participants in the National Health Interview Survey 2005 were asked about perceived stress and individual factors in a cross-sectional design. Information on neighbourhood factors was derived from a national registry. Data were analysed by means of logistic regression models. Low education, heavy smoking, physical inactivity, lack of social network and poor working conditions were associated with perceived stress. For women, living in a neighbourhood with low average education, and for men, living in a neighbourhood with a high rate of crime and a low degree of ethnic diversity, were associated with higher perceived stress. Perceived stress was also related to indicators of morbidity. The group with high perceived stress is characterized by individual and neighbourhood factors with negative impacts on quality of life and risk of illness. This knowledge can guide future stress prevention efforts. Additionally, the results suggest a negative social component where perceived stress, unhealthy lifestyle and low social status are accumulated, and perceived stress might be used as a measure to identify groups characterized by accumulation of risk factors.

  16. Pseudo-icosahedral Cr55Al232 -δ as a high-temperature protective material

    Science.gov (United States)

    Rosa, R.; Bhattacharya, S.; Pabla, J.; He, H.; Misuraca, J.; Nakajima, Y.; Bender, A. D.; Antonacci, A. K.; Adrip, W.; McNally, D. E.; Zebro, A.; Kamenov, P.; Geschwind, G.; Ghose, S.; Dooryhee, E.; Ibrahim, A.; Tritt, T. M.; Aronson, M. C.; Simonson, J. W.

    2018-03-01

    We report here a course of basic research into the potential suitability of a pseudo-icosahedral Cr aluminide as a material for high-temperature protective coatings. Cr55Al232 -δ [ δ =2.70 (6 ) ] exhibits high hardness at room temperature as well as low thermal conductivity and excellent oxidation resistance at 973 K, with an oxidation rate comparable to those of softer, denser benchmark materials. The origin of these promising properties can be traced to competing long-range and short-range symmetries within the pseudo-icosahedral crystal structure, suggesting new criteria for future materials research.

  17. Microstructural Evolution of Ti-6Al-4V during High Strain Rate Conditions of Metal Cutting

    Science.gov (United States)

    Dong, Lei; Schneider, Judy

    2009-01-01

    The microstructural evolution following metal cutting was investigated within the metal chips of Ti-6Al-4V. Metal cutting was used to impose a high strain rate on the order of approx.10(exp 5)/s within the primary shear zone as the metal was removed from the workpiece. The initial microstructure of the parent material (PM) was composed of a bi-modal microstructure with coarse prior grains and equiaxed primary located at the boundaries. After metal cutting, the microstructure of the metal chips showed coarsening of the equiaxed primary grains and lamellar. These metallographic findings suggest that the metal chips experienced high temperatures which remained below the transus temperature.

  18. Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

    International Nuclear Information System (INIS)

    Han Tie-Cheng; Zhao Hong-Dong; Yang Lei; Wang Yang

    2017-01-01

    In this work, we use a 3-nm-thick Al 0.64 In 0.36 N back-barrier layer in In 0.17 Al 0.83 N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al 0.64 In 0.36 N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al 0.64 In 0.36 N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency ( f T ) and power gain cut-off frequency ( f max ) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length. (paper)

  19. Scanning electron microscopy analysis of fuel/matrix interaction layers in highly-irradiated U-Mo dispersion fuel plates with Al and Al-Si alloy matrices

    Energy Technology Data Exchange (ETDEWEB)

    Keiser, Dennis D. Jr; Jue, Jan Fong; Miller, Brandon D.; Gan, Jian; Robinson, Adom B.; Medvedev, Pavel; Madden, James; Wachs, Dan; Meyer, Mitch [Nuclear Fuels and Materials Division, Idaho National Laboratory (United States)

    2014-04-15

    In order to investigate how the microstructure of fuel/matrix-interaction (FMI) layers change during irradiation, different U-7Mo dispersion fuel plates have been irradiated to high fission density and then characterized using scanning electron microscopy (SEM). Specifically, samples from irradiated U-7Mo dispersion fuel elements with pure Al, Al-2Si and AA4043 (-4.5 wt.%Si) matrices were SEM characterized using polished samples and samples that were prepared with a focused ion beam (FIB). Features not observable for the polished samples could be captured in SEM images taken of the FIB samples. For the Al matrix sample, a relatively large FMI layer develops, with enrichment of Xe at the FMI layer/Al matrix interface and evidence of debonding. Overall, a significant penetration of Si from the FMI layer into the U-7Mo fuel was observed for samples with Si in the Al matrix, which resulted in a change of the size (larger) and shape (round) of the fission gas bubbles. Additionally, solid fission product phases were observed to nucleate and grow within these bubbles. These changes in the localized regions of the microstructure of the U-7Mo may contribute to changes observed in the macroscopic swelling of fuel plates with Al-Si matrices.

  20. High-pressure modifications of CaZn2, SrZn2, SrAl2, and BaAl2: Implications for Laves phase structural trends

    International Nuclear Information System (INIS)

    Kal, Subhadeep; Stoyanov, Emil; Belieres, Jean-Philippe; Groy, Thomas L.; Norrestam, Rolf; Haeussermann, Ulrich

    2008-01-01

    High-pressure forms of intermetallic compounds with the composition CaZn 2 , SrZn 2 , SrAl 2 , and BaAl 2 were synthesized from CeCu 2 -type precursors (CaZn 2 , SrZn 2 , SrAl 2 ) and Ba 21 Al 40 by multi-anvil techniques and investigated by X-ray powder diffraction (SrAl 2 and BaAl 2 ), X-ray single-crystal diffraction (CaZn 2 ), and electron microscopy (SrZn 2 ). Their structures correspond to that of Laves phases. Whereas the dialuminides crystallize in the cubic MgCu 2 (C15) structure, the dizincides adopt the hexagonal MgZn 2 (C14) structure. This trend is in agreement with the structural relationship displayed by sp bonded Laves phase systems at ambient conditions. - Graphical abstract: CeCu 2 -type polar intermetallics can be transformed to Laves phases upon simultaneous application of pressure and temperature. The observed structures are controlled by the valence electron concentration

  1. Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

    2017-01-01

    The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/VHEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.

  2. Improved Stress Corrosion Cracking Resistance and Strength of a Two-Step Aged Al-Zn-Mg-Cu Alloy Using Taguchi Method

    Science.gov (United States)

    Lin, Lianghua; Liu, Zhiyi; Ying, Puyou; Liu, Meng

    2015-12-01

    Multi-step heat treatment effectively enhances the stress corrosion cracking (SCC) resistance but usually degrades the mechanical properties of Al-Zn-Mg-Cu alloys. With the aim to enhance SCC resistance as well as strength of Al-Zn-Mg-Cu alloys, we have optimized the process parameters during two-step aging of Al-6.1Zn-2.8Mg-1.9Cu alloy by Taguchi's L9 orthogonal array. In this work, analysis of variance (ANOVA) was performed to find out the significant heat treatment parameters. The slow strain rate testing combined with scanning electron microscope and transmission electron microscope was employed to study the SCC behaviors of Al-Zn-Mg-Cu alloy. Results showed that the contour map produced by ANOVA offered a reliable reference for selection of optimum heat treatment parameters. By using this method, a desired combination of mechanical performances and SCC resistance was obtained.

  3. Study and development of NiAl intermetallic coating on hypo-eutectoid steel using highly activated composite granules of the Ni-Al system

    Energy Technology Data Exchange (ETDEWEB)

    Shahzad, Aamir; Zadorozhnyy, Vladislav Yu.; Pavlov, Mikhail D.; Semenov, Dmitri V.; Kaloshkin, Sergey D. [National Univ. of Science and Technology (MISIS), Moscow (Russian Federation)

    2018-01-15

    NiAl intermetallic coating thickness of about 50 μm was fabricated on hypo-eutectoid steel by mechanical alloying using pre-activated Ni-Al composite granules as coating material. First, Ni and Al powders were mixed with the composition of Ni-50 at.% Al and mechanically activated in a planetary ball mill, until the composite granules of this powder mixture, having maximum activity (9 cm sec{sup -1}), were formed after 120 min of milling at 200 rpm. The composite granules were then taken out from the planetary ball mill just before the critical time, i. e. the time at which these granules synthesize and convert to an intermetallic NiAl compound. The highly activated composite granules of Ni-Al were then put into the vial of a vibratory ball mill with the substrate on top of the chamber. After mechanical alloying for 60 min in the vibratory ball mill, the composite granules were synthesized fully and heat was produced during the synthesis which helped producing a thick and strong adhesive coating of NiAl intermetallic on the steel substrate. The main advantage of this technique is that not only is time saved but also there is no need for any post mechanical alloying process such as annealing or laser treatment etc. to get homogeneous, strongly bonded intermetallic coatings. X-ray diffraction analysis clearly indicates the formation of NiAl phase. Micro-hardness of the coating and substrate was also measured. The cross-sectional microstructure of the composite granules and the final coating were studied by scanning electron microscopy.

  4. Improvement in ductility of high strength polycrystalline Ni-rich Ni{sub 3}Al alloy produced by EB-PVD

    Energy Technology Data Exchange (ETDEWEB)

    Sun, J.Y.; Pei, Y.L.; Li, S.S.; Zhang, H.; Gong, S.K., E-mail: gongsk@buaa.edu.cn

    2014-11-25

    Highlights: • High strength and high ductility of polycrystalline Ni-rich Ni{sub 3}Al alloy sheets were produced. • The elongation could be enhanced from ∼0.5% to ∼14.6% by microstructural control. • The fracture strength (∼820 MPa) was enhanced by the precipitation strengthening. • This work provides a general processing for repairing the worn single crystal blades. - Abstract: A 300 μm Ni-rich Ni{sub 3}Al sheet was produced by electron beam physical vapor deposition (EB-PVD) and followed by different heat treatments to obtain fine γ′/γ two-phase structures with large elongation. Tensile testing was performed at room-temperature, and the corresponding mechanisms were investigated in detail. Results indicated that the as-deposited Ni{sub 3}Al alloy exhibited non-equilibrium directional columnar crystal, and transited to equiaxed crystal with uniformly distributed tough γ phase after heat treatment. Meanwhile, the fracture mechanism transited from brittleness to a mixture of ductility and brittleness modes. With an appropriate heat treatment, high strength (ultimate tensile strength obtained 828 MPa) and high ductility (elongation obtained 14.6%) Ni{sub 3}Al alloy has been achieved, which was due to the mesh network microstructure. A series of transmission electron microscope (TEM) characterizations confirmed that the increasing flow stress of Ni{sub 3}Al alloy was attributed to the cubical secondary γ′ phase precipitates (25–50 nm) within the γ phase. This work provides a potential strategy for repairing the worn tip of single crystal engine blades using Ni-rich Ni{sub 3}Al alloy by EB-PVD.

  5. Repository emplacement costs for Al-clad high enriched uranium spent fuel

    International Nuclear Information System (INIS)

    McDonell, W.R.; Parks, P.B.

    1994-01-01

    A range of strategies for treatment and packaging of Al-clad high-enriched uranium (HEU) spent fuels to prevent or delay the onset of criticality in a geologic repository was evaluated in terms of the number of canisters produced and associated repository costs incurred. The results indicated that strategies in which neutron poisons were added to consolidated forms of the U-Al alloy fuel generally produced the lowest number of canisters and associated repository costs. Chemical processing whereby the HEU was removed from the waste form was also a low cost option. The repository costs generally increased for isotopic dilution strategies, because of the substantial depleted uranium added. Chemical dissolution strategies without HEU removal were also penalized because of the inert constituents in the final waste glass form. Avoiding repository criticality by limiting the fissile mass content of each canister incurred the highest repository costs

  6. Bioinspired, Graphene/Al2O3 Doubly Reinforced Aluminum Composites with High Strength and Toughness.

    Science.gov (United States)

    Zhang, Yunya; Li, Xiaodong

    2017-11-08

    Nacre, commonly referred to as nature's armor, has served as a blueprint for engineering stronger and tougher bioinspired materials. Nature organizes a brick-and-mortar-like architecture in nacre, with hard bricks of aragonite sandwiched with soft biopolymer layers. However, cloning nacre's entire reinforcing mechanisms in engineered materials remains a challenge. In this study, we employed hybrid graphene/Al 2 O 3 platelets with surface nanointerlocks as hard bricks for primary load bearer and mechanical interlocking, along with aluminum laminates as soft mortar for load distribution and energy dissipation, to replicate nacre's architecture and reinforcing effects in aluminum composites. Compared with aluminum, the bioinspired, graphene/Al 2 O 3 doubly reinforced aluminum composite demonstrated an exceptional, joint improvement in hardness (210%), strength (223%), stiffness (78%), and toughness (30%), which are even superior over nacre. This design strategy and model material system should guide the synthesis of bioinspired materials to achieve exceptionally high strength and toughness.

  7. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

    2013-01-01

    We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

  8. The possibility to use TiAl intermetallics for high temperature applications

    International Nuclear Information System (INIS)

    Molotkov, A.V.

    1993-01-01

    Titanium aluminide TiAl is the promising heat resisting structural material with operation temperature up to 850-900 deg C. This intermetallic compound is characterized by low density and high specific values of elasticity moduli and heat resistance properties in wide temperature range, as compared to known heat resisting titanium, iron and nickel base alloys. Test batch of pressed blades was manufactured of TiAl with the use of powder technology. Results of testing showed, that endurance strength of blades exceeded by 30% the strength, required for operation. The calculations showed, that the use of such blades in gas-turbine cagines could provide 30-40% decrease of mass of compressor blading

  9. Mixed-ligand Al complex—a new approach for more high efficient OLEDs

    International Nuclear Information System (INIS)

    Petrova, Petia K.; Tomova, Reni L.; Stoycheva-Topalova, Rumiana T.; Kaloyanova, Stefka S.; Deligeorgiev, Todor G.

    2012-01-01

    The mixed-ligand Aluminum bis(8-hydroxyquinoline) acetylacetonate (Alq 2 Acac) complex was presented and its performance as electroluminescent and electron transporting layer for OLED was studied. The photophysical properties of the novel complex were investigated and compared with the properties of the parent Alq 3 . Highly efficient OLED based on the mixed-ligand Al complex was developed with two times higher luminescence and efficiency compared to the identical OLED based on the conventional Alq 3 The better performance of the devices make the novel Al complex a very promising material for OLEDs. - Highlights: ► A novel electroluminescent Alq 2 Acac complex is presented as material for OLED. ► Electroluminescent emission of Alq 2 Acac is very similar to that of commercial Alq 3 . ► Devices with Alq 2 Acac show better characteristics compared to those with Alq 3 .

  10. Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well

    International Nuclear Information System (INIS)

    Morales, A.L.; Montes, A.; Lopez, S.Y.; Duque, C.A.

    2002-01-01

    Theoretical calculations on the influence of both an external electric field and hydrostatic stress on the binding energy and impurity polarizability of shallow-donor impurities in an isolated GaAs-(Ga, Al)As quantum well are presented. A variational procedure within the effective-mass approximation is considered. The pressure-related Γ-X crossover is taken into account. As a general feature, we observe that the binding energy increases as the length of the well decreases. For the low-pressure regime we observe a linearly binding energy behaviour. For the high-pressure regime the simultaneous effects of the barrier height and the applied electric field bend the binding energy curves towards smaller values. For low hydrostatic pressures the impurity polarization remains constant in all cases with an increasing value as the field increases. This constant behaviour shows that the small variations in well width, effective mass, and dielectric constant with pressure do not appreciably affect polarizability. For high hydrostatic pressure, we see a non-linear increase in polarizability, mainly due to the decrease of barrier height as a result of the external pressure, which allows further deformation of the impurity. (author)

  11. Investigation on powder metallurgy Cr-Si-Ta-Al alloy target for high-resistance thin film resistors with low temperature coefficient of resistance

    International Nuclear Information System (INIS)

    Wang, X.Y.; Zhang, Z.S.; Bai, T.

    2010-01-01

    The sputtering target for high-resistance thin film resistors plays a decisive role in temperature coefficient of resistance (TCR). Silicon-rich chromium (Cr)-silicon (Si) target was designed and smelted for high-resistance thin film resistors with low TCR. Valve metal tantalum (Ta) and aluminum (Al) were introduced to the Cr-Si target to improve the performance of the target prepared. The measures for grain refining in smelting Cr-Si-Ta-Al target were taken to improve the performance of the prepared target. The mechanism and role of grain refinement were discussed in the paper. The phase structure of the prepared target was detected by X-ray diffraction (XRD). Rate of temperature drop was studied to reduce the internal stress of alloy target and conquer the easy cracking disadvantage of silicon-rich target. The electrical properties of sputtered thin film resistors were tested to evaluate the performance of the prepared target indirectly.

  12. High-Uranium-Loaded U3O8-Al fuel element development program. Part 1

    International Nuclear Information System (INIS)

    Martin, M.M.

    1993-01-01

    The High-Uranium-Loaded U 3 O 8 -Al Fuel Element Development Program supports Argonne National Laboratory efforts to develop high-uranium-density research and test reactor fuel to accommodate use of low-uranium enrichment. The goal is to fuel most research and test reactors with uranium of less than 20% enrichment for the purpose of lowering the potential for diversion of highly-enriched material for nonpeaceful usages. The specific objective of the program is to develop the technological and engineering data base for U 3 O 8 -Al plate-type fuel elements of maximal uranium content to the point of vendor qualification for full scale fabrication on a production basis. A program and management plan that details the organization, supporting objectives, schedule, and budget is in place and preparation for fuel and irradiation studies is under way. The current programming envisions a program of about four years duration for an estimated cost of about two million dollars. During the decades of the fifties and sixties, developments at Oak Ridge National Laboratory led to the use of U 3 O 8 -Al plate-type fuel elements in the High Flux Isotope Reactor, Oak Ridge Research Reactor, Puerto Rico Nuclear Center Reactor, and the High Flux Beam Reactor. Most of the developmental information however applies only up to a uranium concentration of about 55 wt % (about 35 vol % U 3 O 8 ). The technical issues that must be addressed to further increase the uranium loading beyond 55 wt % U involve plate fabrication phenomena of voids and dogboning, fuel behavior under long irradiation, and potential for the thermite reaction between U 3 O 8 and aluminum

  13. Academic stress levels were positively associated with sweet food consumption among Korean high-school students.

    Science.gov (United States)

    Kim, Yeonsoo; Yang, Hye Young; Kim, Ae-Jung; Lim, Yunsook

    2013-01-01

    The objectives of the present study were to identify the association among levels of persistent academic stress, appetite, and dietary habits and to determine the specific types of sweet foods consumed by Korean high-school students according to their academic stress levels. The study participants included 333 high-school students in the 10th to 12th grades in Kyunggi Province, Korea. The level of academic stress was scored with a 75-item academic stress scale and was categorized as high, medium, or low. A food-frequency questionnaire was used to measure the sugar intake from sweet foods. Korean high-school students with a high academic stress level had larger meals than the other students. Compared with students with low academic stress, the students with high academic stress had a higher frequency of sugar intake from the following food types: confectionaries, candies and chocolates, breads, and flavored milk. Moreover, compared with students with low academic stress, the students with high academic stress had a higher total intake of sugar from the following food types: confectionaries, candies, chocolates, flavored milk, traditional Korean beverages, and spicy, sweet, and fried rice cakes. Unhealthy stress-related food choices may compromise high-school students' health and contribute to their morbidity. The findings of the present study could be used to help nutritionists develop effective strategies for nutritional education and counseling to improve adolescent health. Copyright © 2013 Elsevier Inc. All rights reserved.

  14. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  15. Effects of High Mean Stress on High-cycle Fatigue Behavior of PWA 1480

    Science.gov (United States)

    Majumdar, S.; Antolovich, S. D.; Milligan, W. W.

    1985-01-01

    PWA 1480 is a potential candidate material for use in the high-pressure fuel turbine blade of the space shuttle main engine. As an engine material it will be subjected to high-cycle fatigue loading superimposed on a high mean stress due to combined centrifugal and thermal loadings. The present paper describes the results obtained in an ongoing program at the Argonne National Laboratory, sponsored by NASA Lewis, to determine the effects of a high mean stress on the high-cycle fatigue behavior of this material. Straight-gauge high-cycle fatigue specimens, 0.2 inch in diameter and with the specimen axis in the 001 direction, were supplied by NASA Lewis. The nominal room temperature yield and ultimate strength of the material were 146 and 154 ksi, respectively. Each specimen was polished with 1-micron diamond paste prior to testing. However, the surface of each specimen contained many pores, some of which were as large as 50 micron. In the initial tests, specimens were subjected to axial-strain-controlled cycles. However, very little cyclic plasticity was observed.

  16. Adverse effect of high migration stress on mental health during pregnancy: a case report.

    Science.gov (United States)

    Lecompte, Vanessa; Richard-Fortier, Zoé; Rousseau, Cécile

    2017-02-01

    Despite empirical evidence on the numerous consequences associated with high migration stress and mental health problems during pregnancy, a psychosocial stress assessment is rarely done, leaving it largely unaddressed. This case illustration sheds light on the common multiple risk factors related to migration stress that have to be taken into consideration when addressing perinatal mental health, and highlights the importance of obstetric appointments as a unique opportunity to assess psychosocial stress and mobilize interdisciplinary interventions.

  17. Tri-Lateral Noor al Salaam High Concentration Solar Central Receiver Program

    Energy Technology Data Exchange (ETDEWEB)

    Blackmon, James B

    2008-03-31

    This report documents the efforts conducted primarily under the Noor al Salaam (“Light of Peace”) program under DOE GRANT NUMBER DE-FC36-02GO12030, together with relevant technical results from a closely related technology development effort, the U.S./Israel Science and Technology Foundation (USISTF) High Concentration Solar Central Receiver program. These efforts involved preliminary design, development, and test of selected prototype power production subsystems and documentation of an initial version of the system definition for a high concentration solar hybrid/gas electrical power plant to be built in Zaafarana, Egypt as a first step in planned commercialization. A major part of the planned work was halted in 2007 with an amendment in October 2007 requiring that we complete the technical effort by December 31, 2007 and provide a final report to DOE within the following 90 days. This document summarizes the work conducted. The USISTF program was a 50/50 cost-shared program supported by the Department of Commerce through the U.S./Israel Science and Technology Commission (USISTC). The USISTC was cooperatively developed by President Clinton and the late Prime Minister Rabin of Israel "to encourage technological collaboration" and "support peace in the Middle East through economic development". The program was conducted as a follow-on effort to Israel's Magnet/CONSOLAR Program, which was an advanced development effort to design, fabricate, and test a solar central receiver and secondary optics for a "beam down" central receiver concept. The status of these hardware development programs is reviewed, since they form the basis for the Noor al Salaam program. Descriptions are provided of the integrated system and the major subsystems, including the heliostat, the high temperature air receiver, the power conversion unit, tower and tower reflector, compound parabolic concentrator, and the master control system. One objective of the USISTF program was to conduct

  18. Martensitic transformations and the shape memory effect in Ti-Zr-Nb-Al high-temperature shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fei; Yu, Zhiguo; Xiong, Chengyang [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Qu, Wentao; Yuan, Bifei [School of Mechanical Engineering, Xi’an Shiyou University, Xi’an 710065 (China); Wang, Zhenguo [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Li, Yan, E-mail: liyan@buaa.edu.cn [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China)

    2017-01-02

    The microstructures, phase transformations, mechanical properties and shape memory effect of Ti-20Zr-10Nb-xAl (x=1, 2, 3, 4 at%) alloys were investigated. The X-ray diffraction results show that the alloys are composed of a single martensitic α″-phase and that the corresponding unit cell volume decreases with increasing Al content. The reverse martensitic transformation start temperature (A{sub s}) of the Ti-20Zr-10Nb-Al alloy is 534 K and decreases with increasing Al content. The addition of Al results in solid solution strengthening and grain refinement strengthening, thus improving the mechanical properties and the shape memory effect of the Ti-20Zr-10 Nb-xAl alloys. The Ti-20Zr-10Nb-3Al alloy shows the greatest shape memory strain (3.2%) and the largest tensile strain (17.6%) as well as a very high tensile strength (886 MPa).

  19. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  20. Orientation and temperature dependence of yield stress and slip geometry of Ti3Al and Ti3Al-V single crystals

    International Nuclear Information System (INIS)

    Umakoshi, Y.; Nakano, T.; Takenaka, T.; Sumimoto, K.; Yamane, T.

    1993-01-01

    Single crystals of binary Ti 3 Al and ternary Ti 3 Al-V alloys with the D0 19 structure were deformed in compression at 20-900 C. Slip systems of the (10 bar 10) -type and the (11 bar 21) -type were observed in these alloys throughout the entire temperature range depending on orientation, but the (11 bar 21) -slip was limited to orientations near [0001]. The basal (0001) -slip was also activated in quenched Ti 3 Al. The CRSS for the (10 bar 10) -slip in the binary and ternary alloys decreases monotonically with increasing temperature. In the ternary alloy the CRSS for the (10 bar 10) -slip shows a violation of Schmid's law, while the binary alloy obeys the CRSS law. When Ti 3 Al is deformed by (11 bar 21) -slip the CRSS for the slip exhibits an anomalous peak in the temperature-CRSS curve but the addition of vanadium suppresses the extent of the anomalous strengthening

  1. Promoting a-Al2O3 layer growth upon high temperature oxidation of NiCoCrAlY alloys

    NARCIS (Netherlands)

    Nijdam, T.J.

    2005-01-01

    The turbine blades in gas turbine engines need to be protected against high temperature oxidation and corrosion with a coating system. This coating system comprises of a Ni-based superalloy substrate, a NiCoCrAlY bond coating (BC) and an insulating ceramic thermal barrier coating (TBC). Good

  2. Stress

    Science.gov (United States)

    ... taking care of an aging parent. With mental stress, the body pumps out hormones to no avail. Neither fighting ... with type 1 diabetes. This difference makes sense. Stress blocks the body from releasing insulin in people with type 2 ...

  3. Stress and phase changes in a low-thermal-expansion Al-3at.%Ge alloy film on oxidized silicon wafers

    International Nuclear Information System (INIS)

    Tu, K.N.; Rodbell, K.P.; Herd, S.R.; Mikalsen, D.J.

    1993-01-01

    The alloy of Al-3at.%Ge has been found to have a low thermal expansion and contraction in the temperature range of room temperature to 400 C. The reason for the low thermal contraction (or expansion) is the precipitation (or dissolution) of Ge in the alloy. The Ge precipitates have a diamond structure in which each Ge atom occupies a much larger atomic volume than a Ge atom dissolved substitutionally in Al. The volume difference compensates for the effect of thermal expansion and contraction with changing temperature which in turn reduces the thermal stress due to thermal mismatch. The technique of wafer bending was used to determine the stress of the alloy film on oxidized silicon wafers upon thermal cycling; indeed, it is much lower than that of pure Al on identical wafers. The morphology of precipitation and dissolution of Ge in Al has been studied by transmission and scanning electron microscopy. It is found that the precipitation follows a discontinuous mode and occurs predominantly along grain boundaries. In dissolving the Ge precipitates into Al, voids are left behind because of the volume difference. It is proposed that this may explain the enhancement of nucleation of voids in the alloy film upon thermal cycling. (orig.)

  4. High mobility AlGaN/GaN devices for β{sup −}-dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

    2016-05-21

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  5. High mobility AlGaN/GaN devices for β"−-dosimetry

    International Nuclear Information System (INIS)

    Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

    2016-01-01

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β"−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β"−-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β"−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β"−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  6. Phenome data - High-sugar stress - DGBY | LSDB Archive [Life Science Database Archive metadata

    Lifescience Database Archive (English)

    Full Text Available switchLanguage; BLAST Search Image Search Home About Archive Update History Data ...s.zip File size: 90KB File name: Original file: High-sugar_stress.xls File URL: ftp://ftp.biosciencedbc.jp/archive/dgby/LATEST/Hi... Center for Protein Sequences) About This Database Database Description Download License Update History of Thi...s Database Site Policy | Contact Us Phenome data - High-sugar stress - DGBY | LSDB Archive ... ...List Contact us DGBY Phenome data - High-sugar stress Data detail Data name Phenome data - High-sugar stress

  7. Surrounding rock stress analysis of underground high level waste repository

    International Nuclear Information System (INIS)

    Liu Wengang; Wang Ju; Wang Guangdi

    2006-01-01

    During decay of nuclear waste, enormous energy was released, which results in temperature change of surrounding rock of depository. Thermal stress was produced because thermal expansion of rock was controlled. Internal structure of surrounding rock was damaged and strength of rock was weakened. So, variation of stress was a dynamic process with the variation of temperature. BeiShan region of Gansu province was determined to be the depository field in the future, it is essential to make research on granite in this region. In the process of experiment, basic physical parameters of granite were analyzed preliminary with MTS. Long range temperature and stress filed was simulated considering the damage effect of surrounding rock, and rules of temperature and stress was achieved. (authors)

  8. Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

    KAUST Repository

    Noriega, Rodrigo; Rivnay, Jonathan; Goris, Ludwig; Kälblein, Daniel; Klauk, Hagen; Kern, Klaus; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Jokisaari, Jacob R.; Kusinski, Greg; Salleo, Alberto

    2010-01-01

    The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

  9. Mechanical and Thermophysical Properties of Cubic Rock-Salt AlN Under High Pressure

    Science.gov (United States)

    Lebga, Noudjoud; Daoud, Salah; Sun, Xiao-Wei; Bioud, Nadhira; Latreche, Abdelhakim

    2018-03-01

    Density functional theory, density functional perturbation theory, and the Debye model have been used to investigate the structural, elastic, sound velocity, and thermodynamic properties of AlN with cubic rock-salt structure under high pressure, yielding the equilibrium structural parameters, equation of state, and elastic constants of this interesting material. The isotropic shear modulus, Pugh ratio, and Poisson's ratio were also investigated carefully. In addition, the longitudinal, transverse, and average elastic wave velocities, phonon contribution to the thermal conductivity, and interesting thermodynamic properties were predicted and analyzed in detail. The results demonstrate that the behavior of the elastic wave velocities under increasing hydrostatic pressure explains the hardening of the corresponding phonons. Based on the elastic stability criteria under pressure, it is found that AlN with cubic rock-salt structure is mechanically stable, even at pressures up to 100 GPa. Analysis of the Pugh ratio and Poisson's ratio revealed that AlN with cubic rock-salt structure behaves in brittle manner.

  10. The relationship between X-ray residual stress near the crack and crack opening/closing behavior controlling fatigue crack propagation in Ti-6Al-4V alloy

    International Nuclear Information System (INIS)

    Torii, Tashiyuki; Toi, Norihiko; Nakano, Kohji; Honda, Kazuo

    1998-01-01

    Using the X-ray method of stress measurement for Ti-6Al-4V alloys, the residual stress near the crack was measured for annealed (AN) and solution treated and aged (STA) titanium alloys, under the condition that the measured X-ray stress was in satisfactory agreement with the applied stress under tension. The residual stress measured in the wake of the propagating fatigue crack, σ r , was compressive, resulting in a smaller crack opening displacement, COD, than theorized. The measured σ r and COD-values let us understand the fatigue crack propagation rate da/dN in terms of the effective stress intensity factor K eff . As a result, the da/dN under the same K eff -value was smaller in the AN specimen with zigzag crack growth than in the STA specimen with straight crack growth, although the da/dN-K eff relationship under various stress amplitudes was represented by a straight line in a log-log scale separately for the AN and STA specimens. (author)

  11. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Science.gov (United States)

    Grady, R.; Bayram, C.

    2017-07-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

  12. An Electrochemical Framework to Explain Intergranular Stress Corrosion Cracking in an Al-5.4%Cu-0.5%Mg-0.5%Ag Alloy

    Science.gov (United States)

    Little, D. A.; Connolly, B. J.; Scully, J. R.

    2001-01-01

    A modified version of the Cu-depletion electrochemical framework was used to explain the metallurgical factor creating intergranular stress corrosion cracking susceptibility in an aged Al-Cu-Mg-Ag alloy, C416. This framework was also used to explain the increased resistance to intergranular stress corrosion cracking in the overaged temper. Susceptibility in the under aged and T8 condition is consistent with the grain boundary Cu-depletion mechanism. Improvements in resistance of the T8+ thermal exposure of 5000 h at 225 F (T8+) compared to the T8 condition can be explained by depletion of Cu from solid solution.

  13. Incorporating Small Fatigue Crack Growth in Probabilistic Life Prediction: Effect of Stress Ratio in Ti-6Al-2Sn-4Zr-6-Mo (Preprint)

    Science.gov (United States)

    2012-08-01

    contains color. 14. ABSTRACT The effect of stress ratio on the statistical aspects of small fatigue crack growth behavior was studied in a duplex ...on the statistical aspects of small fatigue crack growth behavior was studied in a duplex microstructure of Ti-6Al-2Sn-4Zr-6Mo (Ti-6-2-4-6) at 260°C...Similarly, an accurate representation of the R effect is required in problems where the crack grows through regions of varying stress state, such as a weld

  14. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    International Nuclear Information System (INIS)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-01-01

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  15. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  16. Failure mechanism of coated biomaterials under high impact-sliding contact stresses

    Science.gov (United States)

    Chen, Ying

    This study uses a newly developed testing method--- inclined cyclic impact-sliding test to investigate the failure behaviors of different types of biomaterials, (SS316L, Ti6Al4V and CoCr) coated by different coatings (TiN, DLC and PEO), under extremely high dynamic contact stress conditions. This test method can simulate the combined impact and sliding/rolling loading conditions, which is very practical in many aspects of commercial usages. During the tests, fatigue cracking, chipping, peeling and material transferring were observed in damaged area. This research is mainly focused on the failure behaviors of load-bearing materials which cyclic impacting and sliding are always involved. This purpose was accomplished in the three stages: First, impact-sliding test was carried out on TiN coated unhardened M2. It was found that soft substrate can cause early failure of coating due to the considerable plastic deformation in the substrate. In this case, stronger substrate is required to support coating better when tested under high contact stresses. Second, PEO coated Ti-6Al-4V was tested under pure sliding and impact-sliding wear conditions. PEO coating was found not strong enough to afford the high contact pressure under cyclic impact-sliding wear test due to its porous surface structure. However, the wear performance of PEO coating was enhanced due to the sub-stoichiometric oxide. To sum up, for load-bearing biomedical implants involved in high impacting movement, PEO coating may not be a promising surface protection. Third, the dense, smooth PVD/CVD bio-inert coatings were reconsidered. DLC and TiN coatings, combined by different substrates together with different interface materials were tested under the cyclic impact-sliding test using a set of proper loading. The results show that to choose a proper combination of coating, interface and substrate based on their mechanical properties is of great importance under the test condition. Hard substrates provide support

  17. Electroluminescence in quantum well heterostructures p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As under uniaxial stress

    Energy Technology Data Exchange (ETDEWEB)

    Berman, Irina V. [Physics Department, San Jose State University, CA (United States); Bogdanov, Evgeniy V.; Minina, Natalia Ya.; Shirokov, Stanislav S.; Yunovich, Alexander E. [Physics Department, Lomonosov Moscow State University (Russian Federation); Kissel, Heiko [R and D Department, DILAS Diodenlaser GmbH, (Germany)

    2009-03-15

    We present new results on the influence of uniaxial stress up to P=4 kbar on the electroluminescence spectra and current-voltage characteristics of p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As double heterostructures usually used in TM emitting 808 nm high-power diode lasers. With increasing stress, the emission spectra demonstrate a blue shift of up to 25 meV at a pressure of P=4 kbar, while the electroluminescence intensity increases under compression. The different behavior of the current-voltage characteristics under uniaxial stress along[110] and[1 anti 10] directions is mainly determined by the arising piezoelectric field. The results are also discussed in terms of changes in the band structure under uniaxial compression. The construction of the cryostat for optical measurements under uniaxial stress at liquid nitrogen temperature is described in the paper. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Growth Al{sub x}Ga{sub 1−x}N films on Si substrates by magnetron sputtering and high ammoniated two-step method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xuewen, E-mail: wangxuew@nwu.edu.cn [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Su, Xingxing; Hu, Feng; He, Lin; He, Lewan; Zhang, Zhiyong; Zhao, Wu [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Wang, Kai-Ge; Wang, Shuang [Institute of Photonics & Photo-Technology, International Joint Research Centre of Photoelectric Technology & Nano-functional Materials and Application, Northwest University, Xi' an 710069 (China)

    2016-05-15

    In this paper, Al{sub x}Ga{sub 1−x}N films on Si substrates were synthesized with adjusting process parameters by magnetron sputtering and high ammoniated two-step method innovatively, while gallium oxide was used as gallium target, and aluminum was used as aluminum target, ammonia gas and nitrogen were used as nitrogen source. The influence of process parameters on the quality of Al{sub x}Ga{sub 1−x}N films was researched with X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Diffraction Spectrum (EDS) for the prepared samples. The results showed that Al{sub x}Ga{sub 1−x}N film can be grown on the Si substrate by magnetron sputtering and high ammoniated two-step method, and substrate temperature, sputtering power, nitrogen concentration also have a great impact on the quality of Al{sub x}Ga{sub 1−x}N film. The sample was developed along (002) peak preferred with high orientation at 200 °C. High-quality film could be grown when the x is 0.32 in Al{sub x}Ga{sub 1−x}N films grown in 300 °C substrate temperature, 150 W sputtering power and 50% nitrogen concentration conditions, which is used for gas sensitive sensor. And compared stress by the measurement of Raman with an excitation wavelength λ = 532 nm. The samples were tested by photoluminescence (PL), which indicated two light-emitting peaks at 405 nm and 645 nm when the excitation wavelength is 325 nm. The measure in Hall Effect Measurement System showed that the carrier concentration and mobility were changed with different Al components. - Highlights: • Grow Al{sub 0.32}Ga{sub 0.68}N films on Si by RF sputtering and high ammoniated two-step method. • The sample was developed along (002) peak preferred with high orientation at 200 °C. • The growth technics of the film was employed for the preparation of gas sensors. • Carrier concentration and mobility were changed with different Al components.

  19. Development of a database for the prediction of phases in Pt-Al-Cr-Ru alloys for high-temperature and corrosive environments: Al-Cr-Ru

    International Nuclear Information System (INIS)

    Suess, R.; Watson, A.; Cornish, L.A.; Compton, D.N.

    2009-01-01

    Platinum-based alloys for high-temperature corrosive environments are being developed which have microstructures that are analogous to the γ/γ' microstructure of the nickel-based superalloys. The need for a predictive thermodynamic database for these alloys was identified. Because experimental studies suggested that such a database should be based on Pt-Al-Cr-Ru, the Al-Cr-Ru system is of importance in this research programme. Using the CALPHAD method and Thermo-Calc software, existing binary data were used to optimise a ternary database for Al-Cr-Ru against available experimental ternary data. The database gives good predictions with regards to phase equilibria in the system as well as the nature of the primary solidification phases.

  20. Engineering for high heat loads on ALS [Advanced Light Source] beamlines

    International Nuclear Information System (INIS)

    DiGennaro, R.; Swain, T.

    1989-08-01

    This paper discussed general thermal engineering problems and specific categories of thermal design issues for high photon flux beam lines at the LBL Advanced Light Source: thermal distortion of optical surfaces and elevated temperatures of thermal absorbers receiving synchrotron radiation. A generic design for water-cooled heat absorbers is described for use with ALS photon shutters, beam defining apertures, and heat absorbing masks. Also, results of in- situ measurements of thermal distortion of a water-cooled mirror in a synchrotron radiation beam line are compared with calculated performance estimates. 17 refs., 2 figs

  1. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    Energy Technology Data Exchange (ETDEWEB)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  2. Achieving high mobility ZnO : Al at very high growth rates by dc filtered cathodic arc deposition

    International Nuclear Information System (INIS)

    Mendelsberg, R J; Lim, S H N; Wallig, J; Anders, A; Zhu, Y K; Milliron, D J

    2011-01-01

    Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500-1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min -1 while maintaining resistivity below 5 x 10 -4 Ω cm with electron mobility as high as 60 cm 2 V -1 s -1 . (fast track communication)

  3. Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

    Science.gov (United States)

    Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

    2018-04-01

    A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

  4. High temperature oxidation-sulfidation behavior of Cr-Al2O3 and Nb-Al2O3 composites densified by spark plasma sintering

    International Nuclear Information System (INIS)

    Saucedo-Acuna, R.A.; Monreal-Romero, H.; Martinez-Villafane, A.; Chacon-Nava, J.G.; Arce-Colunga, U.; Gaona-Tiburcio, C.; De la Torre, S.D.

    2007-01-01

    The high temperature oxidation-sulfidation behavior of Cr-Al 2 O 3 and Nb-Al 2 O 3 composites prepared by mechanical alloying (MA) and spark plasma sintering (SPS) has been studied. These composite powders have a particular metal-ceramic interpenetrating network and excellent mechanical properties. Oxidation-sulfidation tests were carried out at 900 deg. C, in a 2.5%SO 2 + 3.6%O 2 + N 2 (balance) atmosphere for 48 h. The results revealed the influence of the sintering conditions on the specimens corrosion resistance, i.e. the Cr-Al 2 O 3 and Nb-Al 2 O 3 composite sintered at 1310 deg. C/4 min showed better corrosion resistance (lower weight gains) compared with those found for the 1440 deg. C/5 min conditions. For the former composite, a protective Cr 2 O 3 layer immediately forms upon heating, whereas for the later pest disintegration was noted. Thus, under the same sintering conditions the Nb-Al 2 O 3 composites showed the highest weight gains. The oxidation products were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy

  5. Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

    International Nuclear Information System (INIS)

    Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo

    2013-01-01

    The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al 2 O 3 /AlGaN/GaN double heterojunction HEMTs with thin Al 2 O 3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n s , shows that TF scattering acts as the main limitation when n s exceeds 2 × 10 12 cm −2 . The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. - Highlights: • The mobility limited by thickness fluctuation (TF) scattering is studied. • Results show that thickness fluctuation scattering is the main limitation. • Two-dimensional electron gas (2DEG) mobility is a function of 2DEG density. • TF scattering is the main limitation when 2DEG density exceeds 2 × 10 12 cm −2

  6. Instantaneous strain measurements during high-temperature stress cycling of a dispersion-strengthened niobium alloy

    International Nuclear Information System (INIS)

    Farkas, D.M.; Mishra, R.S.; Mukherjee, A.K.

    1995-01-01

    Experimental results obtained from stress cycling tests performed during high-temperature creep of a dispersion strengthened niobium alloy indicate that the instantaneous strain following the stress change decreases with accumulated strain. The true work-hardening rate was shown to be a small fraction of the elastic modulus which remained fairly constant throughout the strain history. The instantaneous strain change from a stress addition was typically greater than the strain from the corresponding stress reduction. This effect is quite pronounced for small stress changes and diminishes as the magnitude of the stress change increases. This implies that the mobility of dislocations is impeded in the reverse direction unless the magnitude of stress reduction exceeds the value of the internal stress

  7. Notch size effects on high cycle fatigue limit stress of Udimet 720

    International Nuclear Information System (INIS)

    Ren Weiju; Nicholas, Theodore

    2003-01-01

    Notch size effects on the high cycle fatigue (HCF) limit stress of Ni-base superalloy Udimet 720 were investigated on cylindrical specimens with three notch sizes of the same stress concentration factor K t =2.74. The HCF limit stress corresponding to a life of 10 6 cycles was experimentally determined at a stress ratio of 0.1 and a frequency of 25 Hz at room temperature. The stresses were calculated using finite element analysis (FEA) and the specimens analyzed using scanning electron microscopy (SEM). Test results show that at the same K t value, notch size can slightly affect the HCF limit stress of U720 when notch root plasticity occurs. FEA and SEM results reveal that the notch size effects are influenced by a complicated combination of the stress and plastic strain fields at the notch tip, the nominal stress, and the effects of prior plastic deformation on fatigue crack initiation

  8. The use of electromagnetic field in designing the high quality Al alloys for hot forging process

    Directory of Open Access Journals (Sweden)

    Zvonko Gulišija

    2014-12-01

    Full Text Available This work presents a way to obtain the better quality of EN AW 7075 aluminum high-strength alloy by application of electromagnetic field (EMF during the casting process. In this way, the uniform fine-grained microstructure, and hence the better mechanical properties of the alloy can be achieved. The microstructure and mechanical characterization for samples obtained with and without EMF were performed. The application of numerical simulation for hot forging process, using appropriate software, is efficient and highly useful tool for problem prediction in industrial production, reducing the time and costs in the process of development of new products. The input data of high strength Al-alloy EN AW-7075 is used for simulation because it enables the development of parts with complex dimensions and shape.

  9. High hardness and superlative oxidation resistance in a pseudo-icosahehdral Cr-Al binary

    Science.gov (United States)

    Simonson, J. W.; Rosa, R.; Antonacci, A. K.; He, H.; Bender, A. D.; Pabla, J.; Adrip, W.; McNally, D. E.; Zebro, A.; Kamenov, P.; Geschwind, G.; Ghose, S.; Dooryhee, E.; Ibrahim, A.; Aronson, M. C.

    Improving the efficiency of fossil fuel plants is a practical option for decreasing carbon dioxide emissions from electrical power generation. Present limits on the operating temperatures of exposed steel components, however, restrict steam temperatures and therefore energy efficiency. Even as a new generation of creep-resistant, high strength steels retain long term structural stability to temperatures as high as ~ 973 K, the low Cr-content of these alloys hinders their oxidation resistance, necessitating the development of new corrosion resistant coatings. We report here the nearly ideal properties of potential coating material Cr55Al229, which exhibits high hardness at room temperature as well as low thermal conductivity and superlative oxidation resistance at 973 K, with an oxidation rate at least three times smaller than those of benchmark materials. These properties originate from a pseudo-icosahedral crystal structure, suggesting new criteria for future research.

  10. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-01-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f_t/f_m_a_x of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f_t/f_m_a_x of 48/60 GHz.

  11. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Science.gov (United States)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-08-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

  12. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J. [Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)

    2016-08-08

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

  13. Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

    Science.gov (United States)

    Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.

    1991-01-01

    InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

  14. Stress of stoicism

    DEFF Research Database (Denmark)

    Doan, Stacey N.; Dich, Nadya; Evans, Gary W.

    2016-01-01

    The present longitudinal study examined the combined effects of task persistence and negative emotionality (NE) on allostatic load (AL), a physiological indicator of chronic stress. In line with John Henryism theory, we hypothesized that high persistence combined with low NE may be indicative...... persistence was associated with higher physiological stress. Our results have implications for both clinical and intervention contexts....

  15. High-Cycle, Push–Pull Fatigue Fracture Behavior of High-C, Si–Al-Rich Nanostructured Bainite Steel

    Science.gov (United States)

    Zhao, Jing; Ji, Honghong

    2017-01-01

    The high-cycle, push–pull fatigue fracture behavior of high-C, Si–Al-rich nanostructured bainitic steel was studied through the measurement of fatigue limits, a morphology examination and phase composition analysis of the fatigue fracture surface, as well as fractography of the fatigue crack propagation. The results demonstrated that the push–pull fatigue limits at 107 cycles were estimated as 710–889 MPa, for the samples isothermally transformed at the temperature range of 220–260 °C through data extrapolation, measured under the maximum cycle number of 105. Both the interior inclusion and the sample surface constituted the fatigue crack origins. During the fatigue crack propagation, a high amount of secondary cracks were formed in almost parallel arrangements. The apparent plastic deformation occurred in the fracture surface layer, which induced approximately all retained austenite to transform into martensite. PMID:29286325

  16. High-Cycle, Push–Pull Fatigue Fracture Behavior of High-C, Si–Al-Rich Nanostructured Bainite Steel

    Directory of Open Access Journals (Sweden)

    Jing Zhao

    2017-12-01

    Full Text Available The high-cycle, push–pull fatigue fracture behavior of high-C, Si–Al-rich nanostructured bainitic steel was studied through the measurement of fatigue limits, a morphology examination and phase composition analysis of the fatigue fracture surface, as well as fractography of the fatigue crack propagation. The results demonstrated that the push–pull fatigue limits at 107 cycles were estimated as 710–889 MPa, for the samples isothermally transformed at the temperature range of 220–260 °C through data extrapolation, measured under the maximum cycle number of 105. Both the interior inclusion and the sample surface constituted the fatigue crack origins. During the fatigue crack propagation, a high amount of secondary cracks were formed in almost parallel arrangements. The apparent plastic deformation occurred in the fracture surface layer, which induced approximately all retained austenite to transform into martensite.

  17. High-resolution endovaginal MR imaging in stress urinary incontinence

    Energy Technology Data Exchange (ETDEWEB)

    Stoker, Jaap; Lameris, Johan S. [Department of Radiology, Academic Medical Center, University of Amsterdam, P.O. Box 22700, 1100 DE, Amsterdam (Netherlands); Rociu, Elena [Department of Radiology, Academic Medical Center, University of Amsterdam, P.O. Box 22700, 1100 DE, Amsterdam (Netherlands); Department of Radiology, Erasmus Medical Center, 3015 GD, Rotterdam (Netherlands); Bosch, J.L.H. Ruud [Department of Urology, Erasmus Medical Center, 3015 GD, Rotterdam (Netherlands); Messelink, Embert J. [Department of Urology, Academic Medical Center, University of Amsterdam, P.O. Box 22700, 1100 DE, Amsterdam (Netherlands); Department of Urology, Onze Lieve Vrouwe Gasthuis, 1091 HA, Amsterdam (Netherlands); Hulst, Victor P.M. van der [Department of Radiology, Onze Lieve Vrouwe Gasthuis, 1091 HA, Amsterdam (Netherlands); Groenendijk, Annette G. [Department of Gynecology, Onze Lieve Vrouwe Gasthuis, 1091 HA, Amsterdam (Netherlands); Eijkemans, Marinus J.C. [Department of Public Health, Erasmus Medical Center, 3015 GD, Rotterdam (Netherlands)

    2003-08-01

    The causes of stress urinary incontinence are not completely known. Recent papers have stressed the importance of more anatomical information, which may help to elucidate the mechanism of stress urinary incontinence. The purpose of this study was to evaluate the prevalence of lesions of the urethral support mechanism and lesions (defects and scars, thinning) of levator ani muscle with endovaginal MRI in a case-control study. Forty women (median age 52 years, age range 40-65 years) - 20 patients with stress urinary incontinence (cases) and 20 age-matched healthy volunteers (controls) - underwent endovaginal MRI: axial, coronal, and sagittal T2-weighted turbo spin echo. The examinations were evaluated for the presence of lesions of urethral supporting structures and levator ani and scar tissue of the levator ani. The thickness of the levator ani muscle was measured. Lesions of the urethral support system and levator ani were significantly more prevalent in cases than in controls (p<0.01). Median levator ani thickness in patients was significantly lower than in healthy controls [2.5 mm (range 0.9-4.1 mm) vs 3.9 mm (range 1.4-7 mm)] (p<0.01). This study indicates a relationship between stress urine incontinence and the presence of lesions of the urethral support and levator ani and levator ani thinning. (orig.)

  18. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    International Nuclear Information System (INIS)

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  19. Stress-induced martensitic transformations in a Cu-Al-Ni shape memory alloy studied by in situ transmission electron microscopy

    Czech Academy of Sciences Publication Activity Database

    Zárubová, Niva; Gemperlová, Juliana; Gärtnerová, Viera; Gemperle, Antonín

    481-482, č. 5 (2008), s. 457-461 ISSN 0921-5093 R&D Projects: GA ČR GA202/04/2016; GA AV ČR(CZ) IAA200100627 Institutional research plan: CEZ:AV0Z10100520 Keywords : in situ TEM straining * CuAlNi shape memory alloy * stress -induced formation of martensite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.806, year: 2008

  20. Texture development in Al-Mg alloys during high temperature annealing

    International Nuclear Information System (INIS)

    Saitou, T.; Inagaki, H.

    2001-01-01

    To clarify the effect of Mg content on annealing textures developed in Al-Mg alloys during high temperature annealing, Al-Mg alloys containing up to 9 wt.% Mg in supersaturated solid solution were cold rolled 95% and isothermally annealed at 450 C. Their textures were investigated with the orientation distribution function analysis. It was found that, in the recrystallization textures observed at complete recrystallization, addition of more than 1 wt.% Mg was sufficient to suppress the development of {100} left angle 001 right angle. With increasing Mg content, {100} left angle 001 right angle decreased remarkably, whereas {100} left angle 013 right angle and {103} left angle 321 right angle increased. Thus, {100} left angle 013 right angle and {103} left angle 321 right angle were found to be the main orientations of the recrystallization textures of Al-Mg alloys annealed at high temperatures. {100} left angle 013 right angle developed most remarkably at 4 wt.% Mg, while {103} left angle 321 right angle showed the maximum development at 7 wt.% Mg. During subsequent grain growth at 450 C, remarkable texture changes were observed only in the alloys containing Mg in the range between 2 and 4 wt.%. In these alloys, {100} left angle 013 right angle developed at the expense of {100} left angle 001 right angle at earlier stages of grain growth, whereas {103} left angle 321 right angle increased independently of these two orientations at later stages of grain growth. Reflecting these texture changes, grain growth occurred in these alloys discontinuously. Such a discontinuous grain growth with large texture changes is expected, if strong textures are already present before grain growth, and if recrystallized grains having similar orientations are distributed by forming large clusters before grain growth. (orig.)

  1. The stress-strain relationship for multilayers of the high Tc superconducting oxides

    International Nuclear Information System (INIS)

    Hidaka, H.; Yamamura, H.

    1988-01-01

    This paper reports the calculation of the stress-strain relationship for multilayers of the high Tc superconducting oxides. The elucidation of this relationship is expected quite helpful for the preparation of high-quality multilayers of these materials. This calculation is possible to do in the same way of Timoshenko's bi-metal treatment. The authors did computation of the residual stress and strain, and the state of stress and strain for these multilayers has been acquired in detail by this calculation

  2. Parenting stress and parent support among mothers with high and low education

    OpenAIRE

    Parkes, Alison; Sweeting, Helen; Wight, Daniel

    2015-01-01

    Current theorizing and evidence suggest that parenting stress might be greater among parents from both low and high socioeconomic positions (SEP) compared with those from intermediate levels because of material hardship among parents of low SEP and employment demands among parents of high SEP. However, little is known about how this socioeconomic variation in stress relates to the support that parents receive. This study explored whether variation in maternal parenting stress in a population ...

  3. Stress corrosion cracking of several high strength ferrous and nickel alloys

    Science.gov (United States)

    Nelson, E. E.

    1971-01-01

    The stress corrosion cracking resistance of several high strength ferrous and nickel base alloys has been determined in a sodium chloride solution. Results indicate that under these test conditions Multiphase MP35N, Unitemp L605, Inconel 718, Carpenter 20Cb and 20Cb-3 are highly resistant to stress corrosion cracking. AISI 410 and 431 stainless steels, 18 Ni maraging steel (250 grade) and AISI 4130 steel are susceptible to stress corrosion cracking under some conditions.

  4. Fasciculations and their F-response revisited: High-density surface EMG in ALS and benign fasciculations

    NARCIS (Netherlands)

    Kleine, B.U.; Boekestein, W.A.; Arts, I.M.; Zwarts, M.J.; Schelhaas, H.J.; Stegeman, D.F.

    2012-01-01

    Objective: To compare the prevalence of fasciculation potentials (FPs) with F-responses between patients with amyotrophic lateral sclerosis (ALS) and patients with benign fasciculations. Methods: In seven patients with ALS and seven patients with benign fasciculations, high-density surface EMG was

  5. Role of uniform pore structure and high positive charges in the arsenate adsorption performance of Al13-modified montmorillonite

    International Nuclear Information System (INIS)

    Zhao, Shou; Feng, Chenghong; Huang, Xiangning; Li, Baohua; Niu, Junfeng; Shen, Zhenyao

    2012-01-01

    Highlights: ► Al 13 modification changes As(V) sorption mechanism of montmorillonites. ► Intercalated ion charges mainly affects As(V) adsorption kinetics. ► Uniform pore structure exhibit more excellent As(V) adsorption performance. - Abstract: Four modified montmorillonite adsorbents with varied Al 13 contents (i.e., Na-Mont, AC-Mont, PAC 20 -Mont, and Al 13 -Mont) were synthesized and characterized by N 2 adsorption/desorption, X-ray diffraction, and Fourier-transform infrared analyses. The arsenate adsorption performance of the four adsorbents were also investigated to determine the role of intercalated Al 13 , especially its high purity, high positive charge (+7), and special Keggin structure. With increased Al 13 content, the physicochemical properties (e.g., surface area, structural uniformity, basal spacing, and pore volume) and adsorption performance of the modified montmorillonites were significantly but disproportionately improved. The adsorption data well fitted the Freundlich and Redlich–Peterson isotherm model, whereas the kinetic data better correlated with the pseudo-second-order kinetic model. The arsenate sorption mechanism of the montmorillonites changed from physical to chemisorption after intercalation with Al 13 . Increasing charges of the intercalated ions enhanced the arsenate adsorption kinetics, but had minimal effect on the structural changes of the montmorillonites. The uniform pore structure formed by intercalation with high-purity Al 13 greatly enhanced the pore diffusion and adsorption rate of arsenate, resulting in the high adsorption performance of Al 13 -Mont.

  6. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

    Science.gov (United States)

    Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

    1997-10-01

    Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

  7. Microstructural Investigations of Al2O3 Scale Formed on FeCrAl Steel during High Temperature Oxidation in SO2

    International Nuclear Information System (INIS)

    Homa, M.; Zurek, Z.; Morgiel, B.; Zieba, P.; Wojewoda, J.

    2008-01-01

    The results of microstructure observations of the Al 2 O 3 scale formed on a Fe-Cr-Al steel during high temperature oxidation in the SO 2 atmosphere are presented. Morphology of the scale has been studied by SEM and TEM techniques. Phase and chemical compositions have been studied by EDX and XRD techniques. The alumina oxide is a primary component of the scale. TEM observations showed that the scale was multilayer. The entire surface of the scale is covered with 'whiskers, which look like very thin platelets and have random orientation. The cross section of a sample shows, that the 'whiskers' are approximately 2 μm high, however the compact scale layer on which they reside is 0.2 μm thick. The scale layer was composed mainly of small equiaxial grains and a residual amount of small columnar grains. EDX analysis of the scale surface showed that the any sulfides were found in the formed outer and thin inner scale layer. A phase analysis of the scale formed revealed that it is composed mainly of the θ-Al 2 O 3 phase and a residual amount of α-Al 2 O 3

  8. Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al_3Ni_2@Al nanoparticles as a high microwave absorption material

    International Nuclear Information System (INIS)

    Pang, Yu; Xie, Xiubo; Li, Da; Chou, Wusheng; Liu, Tong

    2017-01-01

    The Al_3Ni_2@Al nanoparticles (NPs) were prepared from Ni_4_5Al_5_5 master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m"2/g and big pore volume of 0.507 cc/g. The saturation magnetization (M_S) and coercivity (H_C) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of −86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤−10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance. - Graphical abstract: The microporous Ni/NiO nanoparticles prepared by chemically dealloying Al_3Ni_2@Al NPs exhibit high microwave absorption intensity (−86.9 dB) and wide absorption bandwidth (2.6 GHz for RC≤−10 dB). - Highlights: • Microporous Ni/NiO nanoparticals were prepared by chemically dealloying method. • They possessed micropores of 0.7–1.6 nm with a surface area of 69.5 m"2/g. • They showed high microwave absorption intensity and wide absorption bandwidth. • Microwave absorption mechanism was explained by micropore and core/shell structures.

  9. Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al{sub 3}Ni{sub 2}@Al nanoparticles as a high microwave absorption material

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Yu; Xie, Xiubo; Li, Da [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, No.37 Xueyuan Road, Beijing 100191 (China); Chou, Wusheng [School of Mechanical Engineering and Automation, Beihang University, Beijing 100191 (China); Liu, Tong, E-mail: tongliu@buaa.edu.cn [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, No.37 Xueyuan Road, Beijing 100191 (China)

    2017-03-15

    The Al{sub 3}Ni{sub 2}@Al nanoparticles (NPs) were prepared from Ni{sub 45}Al{sub 55} master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m{sup 2}/g and big pore volume of 0.507 cc/g. The saturation magnetization (M{sub S}) and coercivity (H{sub C}) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of −86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤−10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance. - Graphical abstract: The microporous Ni/NiO nanoparticles prepared by chemically dealloying Al{sub 3}Ni{sub 2}@Al NPs exhibit high microwave absorption intensity (−86.9 dB) and wide absorption bandwidth (2.6 GHz for RC≤−10 dB). - Highlights: • Microporous Ni/NiO nanoparticals were prepared by chemically dealloying method. • They possessed micropores of 0.7–1.6 nm with a surface area of 69.5 m{sup 2}/g. • They showed high microwave absorption intensity and wide absorption bandwidth. • Microwave absorption mechanism was explained by micropore and core/shell structures.

  10. Niobium Carbide-Reinforced Al Matrix Composites Produced by High-Energy Ball Milling

    Science.gov (United States)

    Travessa, Dilermando Nagle; Silva, Marina Judice; Cardoso, Kátia Regina

    2017-06-01

    Aluminum and its alloys are key materials for the transportation industry as they contribute to the development of lightweight structures. The dispersion of hard ceramic particles in the Al soft matrix can lead to a substantial strengthening effect, resulting in composite materials exhibiting interesting mechanical properties and inspiring their technological use in sectors like the automotive and aerospace industries. Powder metallurgy techniques are attractive to design metal matrix composites, achieving a homogeneous distribution of the reinforcement into the metal matrix. In this work, pure aluminum has been reinforced with particles of niobium carbide (NbC), an extremely hard and stable refractory ceramic. Its use as a reinforcing phase in metal matrix composites has not been deeply explored. Composite powders produced after different milling times, with 10 and 20 vol pct of NbC were produced by high-energy ball milling and characterized by scanning electron microscopy and by X-ray diffraction to establish a relationship between the milling time and size, morphology, and distribution of the particles in the composite powder. Subsequently, an Al/10 pct NbC composite powder was hot extruded into cylindrical bars. The strength of the obtained composite bars is comparable to the commercial high-strength, aeronautical-grade aluminum alloys.

  11. Tungsten particle reinforced Al 5083 composite with high strength and ductility

    Energy Technology Data Exchange (ETDEWEB)

    Bauri, Ranjit, E-mail: rbauri@iitm.acin; Yadav, Devinder; Shyam Kumar, C.N.; Balaji, B.

    2015-01-03

    Tungsten particles were incorporated into an Al 5083 matrix by friction stir processing (FSP). FSP resulted in uniform dispersion of the tungsten particles with excellent interfacial bonding and more importantly without the formation of any harmful intermetallics. For the first time, the particles penetrated to a depth equal to the full pin length of the tool. A novel aspect of the 5083 Al–W composite is that it showed an improvement of more than 100 MPa in the UTS and at the same time exhibited a high ductility (30%). The ductility was also evident from the well defined dimples in the fracture surface which also revealed the superior bonding between the particles and the matrix. FSP also resulted in substantial grain refinement of the Al matrix. Electron backscatter diffraction (EBSD) and transmission electron microscopy analysis revealed that the fine grains formed by dynamic recrystallization. A gradual transformation from sub-grain to high-angle grain boundaries was observed from EBSD analysis pointing towards the occurrence of a continuous type of dynamic recrystallization process.

  12. Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

    Science.gov (United States)

    Xu, Kai; Hrma, Pavel; Washton, Nancy; Schweiger, Michael J.; Kruger, Albert A.

    2017-01-01

    The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min-1 to 700 °C was investigated with transmission electron microscopy, 27Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m2 g-1). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification.

  13. Fatigue performance of laser additive manufactured Ti-6Al-4V in very high cycle fatigue (VHCF regime up to 109 cycles

    Directory of Open Access Journals (Sweden)

    Eric eWycisk

    2015-12-01

    Full Text Available Additive manufacturing technologies are in the process of establishing themselves as an alternative production technology to conventional manufacturing such as casting or milling. Especially laser additive manufacturing (LAM enables the production of metallic parts with mechanical properties comparable to conventionally manufactured components. Due to the high geometrical freedom in LAM the technology enables the production of ultra-light weight designs and therefore gains increasing importance in aircraft and space industry. The high quality standards of these industries demand predictability of material properties for static and dynamic load cases. However, fatigue properties especially in the very high cycle fatigue regime until 109 cycles have not been sufficiently determined yet. Therefore this paper presents an analysis of fatigue properties of laser additive manufactured Ti-6Al-4V under cyclic tension-tension until 107 cycles and tension-compression load until 109 cycles.For the analysis of laser additive manufactured titanium alloy Ti-6Al-4V Woehler fatigue tests under tension-tension and tension-compression were carried out in the high cycle and very high cycle fatigue regime. Specimens in stress-relieved as well as hot-isostatic-pressed conditions were analyzed regarding crack initiation site, mean stress sensitivity and overall fatigue performance. The determined fatigue properties show values in the range of conventionally manufactured Ti-6Al-4V with particularly good performance for hot-isostatic-pressed additive-manufactured material. For all conditions the results show no conventional fatigue limit but a constant increase in fatigue life with decreasing loads. No effects of test frequency on life span could be determined. However, independently of testing principle, a shift of crack initiation from surface to internal initiation could be observed with increasing cycles to failure.

  14. Stress corrosion in high-strength aluminum alloys

    Science.gov (United States)

    Dorward, R. C.; Hasse, K. R.

    1980-01-01

    Report describes results of stress-corrosion tests on aluminum alloys 7075, 7475, 7050, and 7049. Tests compare performance of original stress-corrosion-resistant (SCR) aluminum, 7075, with newer, higher-strength SCR alloys. Alloys 7050 and 7049 are found superior in short-transverse cross-corrosion resistance to older 7075 alloy; all alloys are subject to self-loading effect caused by wedging of corrosion products in cracks. Effect causes cracks to continue to grow, even at very-low externally applied loads.

  15. Characteristics of Cu–Al2O3 composites of various starting particle size obtained by high-energy milling

    Directory of Open Access Journals (Sweden)

    VIŠESLAVA RAJKOVIĆ

    2009-05-01

    Full Text Available The powder Cu– Al2O3 composites were produced by high-energy milling. Various combinations of particle size and mixtures and approximately constant amount of Al2O3 were used as the starting materials. These powders were separately milled in air for up to 20 h in a planetary ball mill. The copper matrix was reinforced by internal oxidation and mechanical alloying. During the milling, internal oxidation of pre-alloyed Cu-2 mass %-Al powder generated 3.7 mass % Al2O3 nano-sized particles finely dispersed in the copper matrix. The effect of different size of the starting copper and Al2O3 powder particles on the lattice parameter, lattice distortion and grain size, as well as on the size, morphology and microstructure of the Cu– Al2O3 composite powder particles was studied.

  16. Superior high creep resistance of in situ nano-sized TiCx/Al-Cu-Mg composite.

    Science.gov (United States)

    Wang, Lei; Qiu, Feng; Zhao, Qinglong; Zha, Min; Jiang, Qichuan

    2017-07-03

    The tensile creep behavior of Al-Cu-Mg alloy and its composite containing in situ nano-sized TiC x were explored at temperatures of 493 K, 533 K and 573 K with the applied stresses in the range of 40 to 100 MPa. The composite reinforced by nano-sized TiC x particles exhibited excellent creep resistance ability, which was about 4-15 times higher than those of the unreinforced matrix alloy. The stress exponent of 5 was noticed for both Al-Cu-Mg alloy and its composite, which suggested that their creep behavior was related to dislocation climb mechanism. During deformation at elevated temperatures, the enhanced creep resistance of the composite was mainly attributed to two aspects: (a) Orowan strengthening and grain boundary (GB) strengthening induced by nano-sized TiC x particles, (b) θ' and S' precipitates strengthening.

  17. Deformation Behavior of Al0.25CoCrFeNi High-Entropy Alloy after Recrystallization

    Directory of Open Access Journals (Sweden)

    Jinxiong Hou

    2017-03-01

    Full Text Available Cold rolling with subsequent annealing can be used to produce the recrystallized structure in high entropy alloys (HEAs. The Al0.25CoCrFeNi HEAs rolled to different final thickness (230, 400, 540, 800, 1000, 1500 μm are prepared to investigate their microstructure evolutions and mechanical behaviors after annealing. Only the single face-centered cubic phase was obtained after cold rolling and recrystallization annealing at 1100 °C for 10 h. The average recrystallized grain size in this alloy after annealing ranges from 92 μm to 136 μm. The annealed thin sheets show obviously size effects on the flow stress and formability. The yield strength and tensile strength decrease as t/d (thickness/average grain diameter ratio decreases until the t/d approaches 2.23. In addition, the stretchability (formability decreases with the decrease of the t/d ratio especially when the t/d ratio is lower than about 6. According to the present results, yield strength can be expressed as a function of the t/d ratio.

  18. Age-hardening of an Al-Li-Cu-Mg alloy (2091) processed by high-pressure torsion

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seungwon, E-mail: chominamlsw@gmail.com [Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, Fukuoka 819-0395 (Japan); WPI, International Institute for Carbon-Neutral Energy Research (I2CNER), Kyushu University, Fukuoka 819-0395 (Japan); Horita, Zenji [Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, Fukuoka 819-0395 (Japan); WPI, International Institute for Carbon-Neutral Energy Research (I2CNER), Kyushu University, Fukuoka 819-0395 (Japan); Hirosawa, Shoichi [Department of Mechanical Engineering and Materials Science, Yokohama National University, Yokohama 240-8501 (Japan); Matsuda, Kenji [Graduate School of Science and Engineering for Research, University of Toyama, Toyama 930-8555 (Japan)

    2012-06-01

    This research presents the successful strengthening of an Al-Li-Cu-Mg alloy (2091) through the simultaneous use of grain refinement and age hardening. Following solid-solution treatment, the alloy was processed by high-pressure torsion (HPT) at room temperature and the grain size was refined to {approx}140 nm. The Vickers microhardness increased with increasing strain, and saturated to a constant level of 225 Hv. A further increase in the hardness to {approx}275 Hv was achieved by aging the HPT-processed alloy at 100 Degree-Sign C and 150 Degree-Sign C. Bending tests for the samples treated using the peak aging conditions demonstrated that the stress was significantly increased while considerable ductility was retained. Transmission electron microscopy revealed that the small grains are well retained even after prolonged aging, and the precipitation of fine {delta} Prime particles occurred within the small grains, which confirms that simultaneous strengthening from grain refinement and age hardening is feasible in this alloy.

  19. Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

    International Nuclear Information System (INIS)

    Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon

    2004-01-01

    The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

    Directory of Open Access Journals (Sweden)

    P. Murugapandiyan

    2017-12-01

    Full Text Available A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The remarkable potential device features such as heavily doped source/drain region, Al2O3 passivated device surface helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns of 1.9 × 1013 cm−2, the drain current density (Ids of 2.1 A/mm, the transconductance (gm of 800 mS/mm, the breakdown voltage (VBR of 40 V, the current gain cut-off frequency (ft of 221 GHz and the power gain cut-off frequency (fmax of 290 GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high power millimeter wave applications.

  1. Job Satisfaction, Stress and Coping Strategies among Moroccan High School Teachers.

    Science.gov (United States)

    Benmansour, Naima

    1998-01-01

    Studied job stress, job satisfaction, and coping strategies through self-report measures from 153 Moroccan high school teachers. Results show that 45% of the teachers were satisfied with their jobs, but over half reported high levels of stress, negatively correlated with job satisfaction. Factor analysis of 16 coping strategies produced four…

  2. High performance ZnO:Al films deposited on PET substrates using facing target sputtering

    Science.gov (United States)

    Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

    2013-10-01

    ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

  3. High performance ZnO:Al films deposited on PET substrates using facing target sputtering

    International Nuclear Information System (INIS)

    Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

    2013-01-01

    ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10 −3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

  4. Dosimetry of Al2O3 optically stimulated luminescent dosimeter at high energy photons and electrons

    Science.gov (United States)

    Yusof, M. F. Mohd; Joohari, N. A.; Abdullah, R.; Shukor, N. S. Abd; Kadir, A. B. Abd; Isa, N. Mohd

    2018-01-01

    The linearity of Al2O3 OSL dosimeters (OSLD) were evaluated for dosimetry works in clinical photons and electrons. The measurements were made at a reference depth of Zref according to IAEA TRS 398:2000 codes of practice at 6 and 10 MV photons and 6 and 9 MeV electrons. The measured dose was compared to the thermoluminescence dosimeters (TLD) and ionization chamber commonly used for dosimetry works for higher energy photons and electrons. The results showed that the measured dose in OSL dosimeters were in good agreement with the reported by the ionization chamber in both high energy photons and electrons. A reproducibility test also reported excellent consistency of readings with the OSL at similar energy levels. The overall results confirmed the suitability of OSL dosimeters for dosimetry works involving high energy photons and electrons in radiotherapy.

  5. A new highAl2O3 based metal-insulator-metal antifuse

    Science.gov (United States)

    Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang

    2018-06-01

    In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.

  6. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  7. Wind-Induced Fatigue Analysis of High-Rise Steel Structures Using Equivalent Structural Stress Method

    Directory of Open Access Journals (Sweden)

    Zhao Fang

    2017-01-01

    Full Text Available Welded beam-to-column connections of high-rise steel structures are susceptive to fatigue damage under wind loading. However, most fatigue assessments in the field of civil engineering are mainly based on nominal stress or hot spot stress theories, which has the disadvantage of dependence on the meshing styles and massive curves selected. To address this problem, in this paper, the equivalent structural stress method with advantages of mesh-insensitive quality and capability of unifying different stress-life curves (S-N curves into one is introduced to the wind-induced fatigue assessment of a large-scale complicated high-rise steel structure. The multi-scale finite element model is established and the corresponding wind loading is simulated. Fatigue life assessments using equivalent structural stress method, hot spot stress method and nominal stress method are performed, and the results are verified and comparisons are made. The mesh-insensitive quality is also verified. The results show that the lateral weld toe of the butt weld connecting the beam flange plate and the column is the location where fatigue damage most likely happens. Nominal stress method considers fatigue assessment of welds in a more global way by averaging all the stress on the weld section while in equivalent structural stress method and hot spot method local stress concentration can be taken into account more precisely.

  8. High Temperature Creep of an Al-8,5Fe-1,3V-1,7Si Alloy

    Czech Academy of Sciences Publication Activity Database

    Kuchařová, Květa; Zhu, S. J.; Čadek, Josef

    2002-01-01

    Roč. 40, č. 2 (2002), s. 69-84 ISSN 0023-432X R&D Projects: GA AV ČR IBS2041001 Institutional research plan: CEZ:AV0Z2041904 Keywords : Al-8,5Fe 1,3V 1,7Si alloy * creep behavior , true threshold stress Subject RIV: JI - Composite Materials Impact factor: 0.493, year: 2002

  9. Valutare la percezione dei fattori di rischio da stress lavoro-correlato attraverso strumenti adattati al contesto

    DEFF Research Database (Denmark)

    Conway, Paul Maurice; Aquilina, Tatiana; Campanini, Paolo

    2011-01-01

    The Italian Advisory Committee on work-related stress has outlined a step-by-step approach which considerably limits workers' participation in the first phases of the assessment procedure. Albeit cost-effective, such approach neglects the relevance of employees' perception in correctly identifying...... likely risk factors for job stress. Results of the present study, considering call center workers, points to the need of adopting subjective instruments for job stress assessment that are context-specific, whereas using generic job stress models only (such as Job Demand-Control and Effort Reward....../Imbalance) may not permit the identfication of risk factors that are peculiar to the work settings under investigation....

  10. Social stress induces high intensity sleep in rats

    NARCIS (Netherlands)

    Meerlo, P; Pragt, Bertrand J.; Daan, S

    1997-01-01

    We studied the effect of social stress on sleep electroencephalogram (EEG) in rats. Animals were subjected to a single social defeat by introducing them in the cage of an aggressive male conspecific for 1 h. The animals responded to the social conflict by a sharp increase in EEG slow-wave activity

  11. Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-10-15

    Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

  12. Highly Al-doped TiO2 nanoparticles produced by Ball Mill Method: structural and electronic characterization

    International Nuclear Information System (INIS)

    Santos, Desireé M. de los; Navas, Javier; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-01-01

    Highlights: • Highly Al-doped TiO 2 nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO 2 nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti 4+ ions by Al 3+ in the TiO 2 lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature

  13. Formulation and catalytic performance of MOF-derived Fe@C/Al composites for high temperature Fischer–Tropsch synthesis

    KAUST Repository

    Oar-Arteta, Lide; Valero-Romero, Marí a José ; Wezendonk, Tim; Kapteijn, Freek; Gascon, Jorge

    2017-01-01

    High productivity towards C-2-C-4 olefins together with high catalyst stability are key for optimum operation in high temperature Fischer-Tropsch synthesis (HT-FTS). Here, we report the fabrication of Fe@C/Al composites that combine both the outstanding catalytic properties of the Fe-BTC MOF-derived Fe catalyst and the excellent mechanical resistance and textural properties provided by the inorganic AlOOH binder. The addition of AlOOH to Fe-BTC followed by pyrolysis in N-2 atmosphere at 500 degrees C results in composites with a large mesoporosity, a high Fe/Fe3O4 ratio, 10-35 nm average Fe crystallite size and coordinatively unsaturated Al3+ sites. In catalytic terms, the addition of AlOOH binder gives rise to enhanced C-2-C-4 selectivity and catalyst mechanical stability in HT-FTS, but at high Al contents the activity decreases. Altogether, the productivity of these Fe@C/Al composites is well above most known Fe catalysts for this process.

  14. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

    Science.gov (United States)

    Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

    2018-01-01

    We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

  15. Formulation and catalytic performance of MOF-derived Fe@C/Al composites for high temperature Fischer–Tropsch synthesis

    KAUST Repository

    Oar-Arteta, Lide

    2017-11-15

    High productivity towards C-2-C-4 olefins together with high catalyst stability are key for optimum operation in high temperature Fischer-Tropsch synthesis (HT-FTS). Here, we report the fabrication of Fe@C/Al composites that combine both the outstanding catalytic properties of the Fe-BTC MOF-derived Fe catalyst and the excellent mechanical resistance and textural properties provided by the inorganic AlOOH binder. The addition of AlOOH to Fe-BTC followed by pyrolysis in N-2 atmosphere at 500 degrees C results in composites with a large mesoporosity, a high Fe/Fe3O4 ratio, 10-35 nm average Fe crystallite size and coordinatively unsaturated Al3+ sites. In catalytic terms, the addition of AlOOH binder gives rise to enhanced C-2-C-4 selectivity and catalyst mechanical stability in HT-FTS, but at high Al contents the activity decreases. Altogether, the productivity of these Fe@C/Al composites is well above most known Fe catalysts for this process.

  16. Stress relaxation in 'aged high-purity aluminium at room temperature

    International Nuclear Information System (INIS)

    Butt, M.Z.; Haq, I.U.

    1993-01-01

    Stress relaxation in 99.996% Al polycrystals of average grain diameter 0.30, 0.42 and 0.51 mm, annealed at 500 deg. C and 'aged' for six months at room temperature, have been studied as a function of initial stress level from which relaxation at constant strain was allowed to start. The results obtained were compared with those for 'un-aged' Al specimens of the same purity and grain size. The intrinsic height of the thermally activable energy barrier (1.6 eV) evaluated for 'aged' Al is comparable with that (1.9 eV) for 'un-aged' Al, and is of the order of magnitude for recovery processes. In 'aged' specimens, the relaxation rate at a given stress level is larger and associated activation volume is smaller than that in 'un-aged' specimens. This is probably due to the diffusion of vacancies and/or residual impurity atoms to the cores to edge dislocations in 'aged' specimens; the length of dislocation segment involved in unit activation process therefore gets shortened compared with that in 'un-aged' specimens. (author)

  17. The Effect of Nb Addition on the Microstructure and the High-Temperature Strength of Fe3Al Aluminide

    Science.gov (United States)

    Kratochvíl, Petr; Švec, Martin; Král, Robert; Veselý, Jozef; Lukáč, Pavel; Vlasák, Tomáš

    2018-02-01

    The microstructural and high-temperature mechanical properties of Fe-26Al-xNb (x = 3 and 5 at. pct) are compared. The alloys were investigated "as cast" and after hot rolling at 1473 K (1200 °C). Scanning electron microscopes equipped with EDS and EBSD were used for the microstructure and phase identification. The addition of 3 at. pct of Nb into the Fe3Al matrix leads to the formation of C14 λ—Laves phase (Fe,Al)2Nb (LP) particles spread in the Fe3Al matrix, while an eutectic with thin lamellae of LP C14 λ—Laves phase (Fe,Al)2Nb and matrix is also formed in the iron aluminide with 5 at. pct of Nb. The presence of incoherent precipitates is connected with the enhancement of the high-temperature strength and creep resistance.

  18. Families OverComing under Stress (FOCUS) for Early Childhood: Building Resilience for Young Children in High Stress Families

    Science.gov (United States)

    Mogil, Catherine; Paley, Blair; Doud, Tricia; Havens, Linda; Moore-Tyson, Jessica; Beardslee, William R.; Lester, Patricia

    2010-01-01

    Parental distress and trauma affects the entire family, including the youngest children. Families OverComing Under Stress (FOCUS) is a targeted prevention program for high-risk families that aims to enhance family cohesion, support the parent-child relationship, and build emotional regulation, communication, and problem-solving skills across the…

  19. Soil mechanical stresses in high wheel load agricultural field traffic: a case study

    DEFF Research Database (Denmark)

    Lamandé, Mathieu; Schjønning, Per

    2017-01-01

    highly skewed. Across tyres, the maximum stress in the contact area correlated linearly with, but was much higher than, the mean ground pressure. For each of the three soil depths, the maximum stresses under the tyres were significantly correlated with the wheel load, but not with other loading......Subsoil compaction is a serious long-term threat to soil functions. Only a few studies have quantified the mechanical stresses reaching deep subsoil layers for modern high wheel load machinery. In the present study we measured the vertical stresses in the tyre–soil contact area and at 0.3, 0...

  20. Residual stress evaluation by Barkhausen signals with a magnetic field sensor for high efficiency electrical motors

    Science.gov (United States)

    Tsuchida, Yuji; Enokizono, Masato

    2018-04-01

    The iron loss of industrial motors increases by residual stress during manufacturing processes. It is very important to make clear the distribution of the residual stress in the motor cores to reduce the iron loss in the motors. Barkhausen signals which occur on electrical steel sheets can be used for the evaluation of the residual stress because they are very sensitive to the material properties. Generally, a B-sensor is used to measure Barkhausen signals, however, we developed a new H-sensor to measure them and applied it into the stress evaluation. It is supposed that the Barkhausen signals by using a H-sensor can be much effective to the residual stress on the electrical steel sheets by referring our results regarding to the stress evaluations. We evaluated the tensile stress of the electrical steel sheets by measuring Barkhausen signals by using our developed H-sensor for high efficiency electrical motors.

  1. Effect of oxygen incorporation on the structure and elasticity of Ti-Al-O-N coatings synthesized by cathodic arc and high power pulsed magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hans, M., E-mail: hans@mch.rwth-aachen.de; Baben, M. to; Music, D.; Ebenhöch, J.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Primetzhofer, D. [Department of Physics and Astronomy, Uppsala University, Lägerhyddsvägen 1, S-75120 Uppsala (Sweden); Kurapov, D.; Arndt, M.; Rudigier, H. [Oerlikon Balzers Coating AG, Iramali 18, LI-9496 Balzers, Principality of Liechtenstein (Liechtenstein)

    2014-09-07

    Ti-Al-O-N coatings were synthesized by cathodic arc and high power pulsed magnetron sputtering. The chemical composition of the coatings was determined by means of elastic recoil detection analysis and energy dispersive X-ray spectroscopy. The effect of oxygen incorporation on the stress-free lattice parameters and Young's moduli of Ti-Al-O-N coatings was investigated by X-ray diffraction and nanoindentation, respectively. As nitrogen is substituted by oxygen, implications for the charge balance may be expected. A reduction in equilibrium volume with increasing O concentration is identified by X-ray diffraction and density functional theory calculations of Ti-Al-O-N supercells reveal the concomitant formation of metal vacancies. Hence, the oxygen incorporation-induced formation of metal vacancies enables charge balancing. Furthermore, nanoindentation experiments reveal a decrease in elastic modulus with increasing O concentration. Based on ab initio data, two causes can be identified for this: First, the metal vacancy-induced reduction in elasticity; and second, the formation of, compared to the corresponding metal nitride bonds, relatively weak Ti-O and Al-O bonds.

  2. Effect of oxygen incorporation on the structure and elasticity of Ti-Al-O-N coatings synthesized by cathodic arc and high power pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Hans, M.; Baben, M. to; Music, D.; Ebenhöch, J.; Schneider, J. M.; Primetzhofer, D.; Kurapov, D.; Arndt, M.; Rudigier, H.

    2014-01-01

    Ti-Al-O-N coatings were synthesized by cathodic arc and high power pulsed magnetron sputtering. The chemical composition of the coatings was determined by means of elastic recoil detection analysis and energy dispersive X-ray spectroscopy. The effect of oxygen incorporation on the stress-free lattice parameters and Young's moduli of Ti-Al-O-N coatings was investigated by X-ray diffraction and nanoindentation, respectively. As nitrogen is substituted by oxygen, implications for the charge balance may be expected. A reduction in equilibrium volume with increasing O concentration is identified by X-ray diffraction and density functional theory calculations of Ti-Al-O-N supercells reveal the concomitant formation of metal vacancies. Hence, the oxygen incorporation-induced formation of metal vacancies enables charge balancing. Furthermore, nanoindentation experiments reveal a decrease in elastic modulus with increasing O concentration. Based on ab initio data, two causes can be identified for this: First, the metal vacancy-induced reduction in elasticity; and second, the formation of, compared to the corresponding metal nitride bonds, relatively weak Ti-O and Al-O bonds

  3. HIGH TEMPERATURE BRAZING ALLOY FOR JOINT Fe-Cr-Al MATERIALS AND AUSTENITIC AND FERRITIC STAINLESS STEELS

    Science.gov (United States)

    Cost, R.C.

    1958-07-15

    A new high temperature brazing alloy is described that is particularly suitable for brazing iron-chromiumaluminum alloys. It consists of approximately 20% Cr, 6% Al, 10% Si, and from 1.5 to 5% phosphorus, the balance being iron.

  4. Thermomechanical Treatments on High Strength Al-Zn-Mg(-Cu) Alloys

    National Research Council Canada - National Science Library

    Di Russo, E; Conserva, M; Gatto, F

    1974-01-01

    An investigation was carried out to determine the metallurgical properties of Al-Zn-Mg and Al-Zn-Mg-Cu alloy products processed according to newly developed Final Thermomechanical Treatments (FTMT) of T-AHA type...

  5. Synthesis and microstructure characterization of Ni-Cr-Co-Ti-V-Al high entropy alloy coating on Ti-6Al-4V substrate by laser surface alloying

    International Nuclear Information System (INIS)

    Cai, Zhaobing; Jin, Guo; Cui, Xiufang; Liu, Zhe; Zheng, Wei; Li, Yang; Wang, Liquan

    2016-01-01

    Ni-Cr-Co-Ti-V-Al high-entropy alloy coating on Ti-6Al-4V was synthesized by laser surface alloying. The coating is composed of a B2 matrix and (Co, Ni)Ti 2 compounds with few β-Ti phases. Focused ion beam technique was utilized to prepare TEM sample and TEM observations agree well with XRD and SEM results. The formation of HEA phases is due to high temperature and rapid cooling rate during laser surface alloying. The thermodynamic parameters, ΔH mix , ΔS mix and δ as well as Δχ, should be used to predict the formation of the BCC solid solution, but they are not the strict criteria. Especially when Δχ reaches a high value (≥ 10%), BCC HEA will be partially decomposed, leading to the formation of (Co, Ni)Ti 2 compound phases. - Highlights: •Preparing HEA coating on Ti-6Al-4V by laser surface alloying is successful. •The synthesized HEA coating mainly consists of BCC HEA and (Co, Ni)Ti 2 compounds. •FIB technology was used to prepare the sample for TEM analysis. • ΔH mix , ΔS mix and δ as well as Δχ, should be all used to predict the formation of solid solution.

  6. Irradiation tests of U3Si2-Al fuels up to very high fission densities

    International Nuclear Information System (INIS)

    Nuding, M.; Boening, K.

    2001-01-01

    The new research reactor of the Munich Technical University (TUM), the FRM-II, will have U 3 Si 2 -Al as the fuel. This fuel is considered qualified and optimally usable in the light of findings obtained in the RERTR program (Reduced Enrichment for Research and Test Reactors). The RERTR program was conducted to develop new fuel for the use of low enriched uranium (LEU) in research reactors. As the unique properties of the FRM-II in research and application are based also on achieving a very compact reactor core with highly enriched uranium (HEU), additional irradiation tests were performed on the basis of the RERTR program. They were run in close cooperation with the French Commissariat a l'Energie Atomique (CEA) in its SILOE and OSIRIS facilities, among others. After extensive evaluation, also of other studies, these tests confirm the RERTR findings about fuel swelling behavior and, consequently, the suitability of U 3 Si 2 -Al (HEU) for use in the compact core of the FRM-II. (orig.) [de

  7. Electron beam melting of high niobium containing TiAl alloy: feasibility investigation

    Energy Technology Data Exchange (ETDEWEB)

    Terner, Mathieu; Biamino, Sara; Epicoco, Paolo; Fino, Paolo; Pavese, Matteo; Badini, Claudio [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino (Italy); Penna, Andrea; Gennaro, Paolo [AvioProp, Novara (Italy); Hedin, Oscar; Ackelid, Ulf [Arcam AB, Molndal (Sweden); Sabbadini, Silvia; Pelissero, Federica [Avio SpA, Torino (Italy)

    2012-08-15

    Third generation {gamma}-TiAl alloys with a high niobium content, Ti-(47-48)Al-2Cr-8Nb, were processed by electron beam melting (EBM). This near-net-shape additive manufacturing process produces complex parts according to a CAD design. The starting powder is deposited layer by layer on the building table and selectively melted to progressively form the massive part. The EBM parameters such as layer thickness, melting temperature, scanning speed, or building strategy were set up to minimize porosity. The chemical composition of the built material is similar to the composition of the base powder despite a slight evaporation of aluminum and reveals a neglectable oxygen pick-up. The very fine equiaxed microstructure resulting after EBM can be then set up by heat treatment (HT). According to the HT temperature in particular, an equiaxed microstructure, a duplex microstructure with different lamellar ratio and a fully lamellar microstructure is obtained. Not only test bars have been produced but also complex parts such as demo low pressure turbine blades. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. High-temperature behavior of oxide dispersion strengthening CoNiCrAlY

    Energy Technology Data Exchange (ETDEWEB)

    Unocic, Kinga A. [ORNL; Bergholz, Jan [Forschungszentrum Jülich GmbH; Huang, T [Institute for Energy and Climate Research, IEK-2, Forschungszentrum Jülich GmbH; Naumenko, Dymtro [Forschungszentrum Julich GmbH (Julich Research Centre), Germany; Pint, Bruce A. [ORNL; Vaßen, Robert [Forschungszentrum Julich, Germany; Quadakkers, Willem Joseph [Forschungszentrum Julich, Germany

    2017-11-01

    To fabricate oxide dispersion strengthened bond coatings, commercial Co–30wt-%Ni–20Cr–8Al–0•4Y powder was milled with 2% additions of Al2O3, Y2O3 or Y2O3 + HfO2. Low-pressure plasma sprayed, free-standing specimens were oxidised in air + 10%H2O at 1100 °C both isothermally (100 h) and in 500, 1-h cycles. Dry air cyclic testing conducted at both ORNL and FZJ showed remarkably similar results. In general, the water vapour addition caused more scale spallation. Two LPPS specimens without oxide additions were tested for comparison. The specimens with 2%Al2O3 addition exhibited the best behaviour as the powder already contained 0•4%Y. Additions of 2%Y2O3 and especially 1%Y2O3 + 1%HfO2 resulted in over-doping as evidenced by high mass gains and the formation of Y- and Hf-rich pegs. Scanning transmission electron microscopy of the isothermal specimens showed no Hf and/or Y segregation to the alumina scale grain boundaries in the over-doped specimens.

  9. Phase separation in equiatomic AlCoCrFeNi high-entropy alloy

    Energy Technology Data Exchange (ETDEWEB)

    Manzoni, A., E-mail: anna.manzoni@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Institute of Applied Materials, D-14109 Berlin (Germany); Daoud, H.; Völkl, R.; Glatzel, U. [Metals and Alloys, University Bayreuth, Ludwig-Thoma-Strasse 36b, D-95447 Bayreuth (Germany); Wanderka, N. [Helmholtz-Zentrum Berlin, Institute of Applied Materials, D-14109 Berlin (Germany)

    2013-09-15

    The microstructure of the as-cast AlCoCrFeNi high entropy alloy has been investigated by transmission electron microscopy and atom probe tomography. The alloy shows a very pronounced microstructure with clearly distinguishable dendrites and interdendrites. In both regions a separation into an Al–Ni rich matrix and Cr–Fe-rich precipitates can be observed. Moreover, fluctuations of single elements within the Cr–Fe rich phase have been singled out by three dimensional atom probe measurements. The results of investigations are discussed in terms of spinodal decomposition of the alloying elements inside the Cr–Fe-rich precipitates. - Highlights: ► The Alloy separates into an Al–Ni rich matrix and Cr–Fe-rich precipitates. ► Concentration depth profiles in the Cr–Fe rich regions show opposite fluctuations. ► They have been attributed to the spinodal decomposition of Fe- and Cr-rich phases. ► The Al–Ni rich region corresponds well to the Al–Ni rich phases observed in the 6 component AlCoCrCuFeNi alloy.

  10. Mixed-ligand Al complex-a new approach for more high efficient OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Petrova, Petia K., E-mail: petia@clf.bas.bg [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G Bonchev st., bl. 109, 1113 Sofia (Bulgaria); Tomova, Reni L.; Stoycheva-Topalova, Rumiana T. [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G Bonchev st., bl. 109, 1113 Sofia (Bulgaria); Kaloyanova, Stefka S.; Deligeorgiev, Todor G. [Applied Organic Chemistry, Faculty of Chemistry, University of Sofia, Sofia 1164 (Bulgaria)

    2012-02-15

    The mixed-ligand Aluminum bis(8-hydroxyquinoline) acetylacetonate (Alq{sub 2}Acac) complex was presented and its performance as electroluminescent and electron transporting layer for OLED was studied. The photophysical properties of the novel complex were investigated and compared with the properties of the parent Alq{sub 3}. Highly efficient OLED based on the mixed-ligand Al complex was developed with two times higher luminescence and efficiency compared to the identical OLED based on the conventional Alq{sub 3} The better performance of the devices make the novel Al complex a very promising material for OLEDs. - Highlights: Black-Right-Pointing-Pointer A novel electroluminescent Alq{sub 2}Acac complex is presented as material for OLED. Black-Right-Pointing-Pointer Electroluminescent emission of Alq{sub 2}Acac is very similar to that of commercial Alq{sub 3}. Black-Right-Pointing-Pointer Devices with Alq{sub 2}Acac show better characteristics compared to those with Alq{sub 3}.

  11. Features of dynamic strain aging in high strength Al-Zn-Mg-Cu alloy

    Energy Technology Data Exchange (ETDEWEB)

    Peng Kaiping; Chen Wenzhe; Zhang Haoguo; Qian Kuangwu [Fuzhou Univ., Fujian (China)

    1997-08-30

    The present work investigates mainly the regulation and features of the occurrence of serrated yielding phenomenon of a high strength Al-Zn-Mg-Cu alloy LC4 under various heat treatments and loading conditions. The main results are: (1) In the serrated yielding temperature region a critical transition temperature T{sub t} exists. The critical plastic strain has a negative or positive temperature coefficient within the temperature region lower or higher than T{sub t}; (2) The reason for this phenomenon might be the existence of an absorbed resource which diminishes the pinning effect of solute atoms to mobile dislocations; (3) in the positive coefficient region two reverse thermal activation processes occur simultaneously. One is the solute atoms diffuse to the moving dislocations and pin the dislocations. The other one is the absorbed resource absorbs the solute and diminishes the pinning effect; (4) for LC4, the activation energy of the first process is equivalent to the diffusion activation energy of Mg in Al matrix and the second one is equivalent to that of the interface absorbed solute atoms. (orig.) 6 refs.

  12. Effect of low and high heating rates on reaction path of Ni(V)/Al multilayer

    Energy Technology Data Exchange (ETDEWEB)

    Maj, Łukasz, E-mail: l.maj@imim.pl [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Kraków (Poland); Morgiel, Jerzy; Szlezynger, Maciej [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Kraków (Poland); Bała, Piotr; Cios, Grzegorz [AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, 30 Kawiory St., 30-055 Kraków (Poland)

    2017-06-01

    The effect of heating rates of Ni(V)/Al NanoFoils{sup ®} was investigated with transmission electron microscopy (TEM). The Ni(V)/Al were subjected to heating by using differential scanning calorimetry (DSC), in-situ TEM or electric pulse. Local chemical analysis was carried out using energy dispersive X-ray spectroscopy (EDS). Phase analysis was done with X-ray diffractions (XRD) and selected area electron diffractions (SAED). The experiments showed that slow heating in DSC results in development of separate exothermic effects at ∼230 °C, ∼280 °C and ∼390 °C, corresponding to precipitation of Al{sub 3}Ni, Al{sub 3}Ni{sub 2} and NiAl phases, respectively, i.e. like in vanadium free Ni/Al multilayers. Further heating to 700 °C allowed to obtain a single phase NiAl foil. The average grain size (g.s.) of NiAl phase produced in the DSC heat treated foil was comparable with the Ni(V)/Al multilayer period (∼50 nm), whereas in the case of reaction initiated with electric pulse the g.s. was in the micrometer range. Upon slow heating vanadium tends to segregate to zones parallel to the original multilayer internal interfaces, while in SHS process vanadium-rich phases precipitates at grain boundaries of the NiAl phase. - Highlights: • Peaks in DSC heating of Ni(V)/Al were explained by in-situ TEM observations. • Nucleation of Al{sub 3}Ni, Al{sub 3}Ni{sub 2} and NiAl at slow heating of Ni(V)/Al was documented. • Near surface NiAl obtained from NanoFoil show Ag precipitates at grain boundaries.

  13. Effects of Cooling Rate on Precipitate Evolution and Residual Stresses in Al-Si-Mn-Mg Casting Alloy

    Science.gov (United States)

    Lee, Eunkyung; Walde, Caitlin; Mishra, Brajendra

    2018-03-01

    The residual stresses with different heat treatment conditions have been measured and correlated with the microstructural behavior of AA365. 30 and 100 K/min cooling of AA365 inhibited the transformation of precipitates under 773 K, respectively. The alloy cooled at 30 and 100 K/min exhibited tensile residual stresses of 6.2 and 5.4 MPa, respectively, while the alloy cooled at 1 and 10 K/min showed compressive stresses of - 12.8 and - 10.3 MPa, respectively. The formation β', β″, and other intermetallic compounds affected the compressive residual stresses, and that the fracture of the brittle intermetallic phases could reduce the extent of residual stresses in the lattice through plastic deformation.

  14. Highly Oriented Growth of Catalytically Active Zeolite ZSM‐5 Films with a Broad Range of Si/Al Ratios

    OpenAIRE

    Fu, Donglong; Schmidt, Joel E.; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M.

    2017-01-01

    Abstract Highly b‐oriented zeolite ZSM‐5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films. Herein, using structure‐directing agents with hydroxy groups, we demonstrate a new method to prepare highly b‐oriented zeolite ZSM‐5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞)...

  15. Modeling the Effects of Cu Content and Deformation Variables on the High-Temperature Flow Behavior of Dilute Al-Fe-Si Alloys Using an Artificial Neural Network.

    Science.gov (United States)

    Shakiba, Mohammad; Parson, Nick; Chen, X-Grant

    2016-06-30

    The hot deformation behavior of Al-0.12Fe-0.1Si alloys with varied amounts of Cu (0.002-0.31 wt %) was investigated by uniaxial compression tests conducted at different temperatures (400 °C-550 °C) and strain rates (0.01-10 s -1 ). The results demonstrated that flow stress decreased with increasing deformation temperature and decreasing strain rate, while flow stress increased with increasing Cu content for all deformation conditions studied due to the solute drag effect. Based on the experimental data, an artificial neural network (ANN) model was developed to study the relationship between chemical composition, deformation variables and high-temperature flow behavior. A three-layer feed-forward back-propagation artificial neural network with 20 neurons in a hidden layer was established in this study. The input parameters were Cu content, temperature, strain rate and strain, while the flow stress was the output. The performance of the proposed model was evaluated using the K-fold cross-validation method. The results showed excellent generalization capability of the developed model. Sensitivity analysis indicated that the strain rate is the most important parameter, while the Cu content exhibited a modest but significant influence on the flow stress.

  16. Understanding the role of carbon atoms on microstructure and phase transformation of high Nb containing TiAl alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zeen; Hu, Rui; Zhang, Tiebang, E-mail: tiebangzhang@nwpu.edu.cn; Zhang, Fan; Kou, Hongchao; Li, Jinshan

    2017-02-15

    The microstructure and solidification behavior of high Nb containing TiAl alloys with the composition of Ti-46Al-8Nb-xC (x = 0.1, 0.7, 1.4, 2.5 at.%) prepared by arc-melting method have been investigated in this work. The results give evidence that the addition of carbon changes the solidification behavior from solidification via the β phase to the peritectic solidification. And carbon in solid solution enriches in the α{sub 2} phase and increases the microhardness. As the carbon content increases to 1.4 at.%, plate-shape morphology carbides Ti{sub 2}AlC (H phase) precipitate from the TiAl matrix which leads to the refinement microstructure. By aging at 1173 K for 24 h after quenching treatment, fine needle-like and granular shape Ti{sub 3}AlC (P phase) carbides are observed in the matrix of Ti-46Al-8Nb-2.5C alloy, which distribute along the lamellar structure or around the plate-shape Ti{sub 2}AlC. Transmission electron microscope observation shows that the Ti{sub 3}AlC carbides precipitate at dislocations. The phase transformation in-situ observations indicate that the Ti{sub 2}AlC carbides partly precipitate during the solid state phase transformation process. - Highlights: •Carbon changes the solidification behavior from β phase to peritectic solidification. •Dislocations in solution treated γ phase act as nucleation sites of Ti{sub 3}AlC precipitations. •Ti{sub 3}AlC precipitates as fine needle-like or granular shape in the solution treated matrix. •Ti{sub 2}AlC carbides precipitate during the solid state phase transformation process.

  17. Study of stress corrosion cracking initiation of high alloy materials

    Energy Technology Data Exchange (ETDEWEB)

    Blahetova, Marie; Cihal, Vladimir; Lasek, Stanislav [Department of Materials Engineering, VSB - Technical University of Ostrava, tr. 17. listopadu 15, 708 33 Ostrava - Poruba (Czech Republic)

    2004-07-01

    The stainless steels and related alloys with sufficient resistance to a general corrosion can be susceptible to a localized corrosion (pitting, cracking, intergranular corrosion) in certain environment under specific conditions. The Drop Evaporation Test (DET) was developed for study of stainless materials resistance to stress corrosion cracking (SCC) at elevated temperatures 100 - 300 deg. C under constant external load using a chloride containing water solution. In the contribution the initiation and propagation of short cracks as well as pits were observed during the test. The crack initiation and/or propagation can be influenced by the cyclic thermal stresses, when the diluted water solution drops cool down the hot sample. The coordinates measurement of microscopic pits and sharp corrosion crack tips by the travelling microscope method allowed to derive the crack growth lengths and rates of short cracks. (authors)

  18. Study of stress corrosion cracking initiation of high alloy materials

    International Nuclear Information System (INIS)

    Blahetova, Marie; Cihal, Vladimir; Lasek, Stanislav

    2004-01-01

    The stainless steels and related alloys with sufficient resistance to a general corrosion can be susceptible to a localized corrosion (pitting, cracking, intergranular corrosion) in certain environment under specific conditions. The Drop Evaporation Test (DET) was developed for study of stainless materials resistance to stress corrosion cracking (SCC) at elevated temperatures 100 - 300 deg. C under constant external load using a chloride containing water solution. In the contribution the initiation and propagation of short cracks as well as pits were observed during the test. The crack initiation and/or propagation can be influenced by the cyclic thermal stresses, when the diluted water solution drops cool down the hot sample. The coordinates measurement of microscopic pits and sharp corrosion crack tips by the travelling microscope method allowed to derive the crack growth lengths and rates of short cracks. (authors)

  19. Fabrication of Al-20 wt%Si powder using scrap Si by ultra high-energy milling process

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Won-Kyung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Y Latin-Small-Letter-Dotless-I lmaz, Fikret [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tasliciftlik Campus, 60240 Tokat (Turkey); Kim, Hyo-Seob; Koo, Jar-Myung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer High energy ball milling process has been successfully employed to produce Al-20Si alloy using scrap Si powders. Black-Right-Pointing-Pointer Fully finer and homogenous structure could be achieved after 60 min of milling time. Black-Right-Pointing-Pointer Si particles were not dissolved but uniformly dispersed in the Al matrix in a milled state. Black-Right-Pointing-Pointer The hardness of as-milled Al-20Si powder increased steadily with the increase of milling time. Black-Right-Pointing-Pointer Grain size and dispersion strengthening are two mechanisms being responsible for hardness increment. - Abstract: In this study, microstructural evolution and mechanical properties of Al-20 wt%Si and pure Al powders fabricated by ultra high-energy ball milling technique were investigated as a function of milling time. The microstructure and mechanical properties of the as-milled powders were examined by scanning electron microscope (SEM), energy dispersive spectrometry (EDS), X-ray diffractometer (XRD) and Vickers hardness tester. SEM observation showed that the particle size increased at an early stage of milling, and then decreased drastically with further milling. XRD and cross-sectional EDS-mapping analyses revealed that Si particles were not dissolved but uniformly dispersed in the Al matrix in a milled state. Vickers hardness of both pure Al and Al-Si powder increases with milling time, which attributes to the grain size strengthening and dispersion strengthening.

  20. A highly sensitive, single selective, fluorescent sensor for Al3+ detection and its application in living cell imaging

    International Nuclear Information System (INIS)

    Ye, Xing-Pei; Sun, Shao-bo; Li, Ying-dong; Zhi, Li-hua; Wu, Wei-na; Wang, Yuan

    2014-01-01

    A new o-aminophenol-based fluorogenic chemosensor methyl 3,5-bis((E)-(2-hydroxyphenylimino)methyl)-4-hydroxybenzoate 1 have been synthesized by Schiff base condensation of methyl 3,5-diformyl-4-hydroxybenzoate with o-aminophenol, which exhibits high selectivity and sensitivity toward Al 3+ . Fluorescence titration studies of receptors 1 with different metal cations in CH 3 OH medium showed highly selective and sensitive towards Al 3+ ions even in the presence of other commonly coexisting metal ions. The detection limit of Al 3+ ions is at the parts per billion level. Interestingly, the Al(III) complex of 1 offered a large Stokes shift (>120 nm), which can miximize the selfquenching effect. In addition, possible utilization of this receptor as bio-imaging fluorescent probe to detect Al 3+ in human cervical HeLa cancer cell lines was also investigated by confocal fluorescence microscopy. - Highlights: • A new Schiff base chemosensor is reported. • The sensor for Al 3+ offers large Stokes shift. • The detection limit of Al 3+ in CH 3 OH solution is at the parts per billion level. • The utilization of sensor for the monitoring of Al 3+ levels in living cells was examined