Amphibole Fractional Crystallization and Delamination in Arc Roots: Implications for the `Missing' Nb Reservoir in the Earth

Science.gov (United States)

Galster, F.; Chatterjee, R. N.; Stockli, D. F.

2017-12-01

Most geologic processes should not fractionate Nb from Ta but Earth's major silicate reservoirs have subchondritic Nb/Ta values. Nb/Ta of >10000 basalts and basaltic andesites from different tectonic settings (GEOROC) cluster around 16, indistinguishable from upper mantle values. In contrast, Nb/Ta in more evolved arc volcanics have progressively lower values, reaching continental crust estimates, and correlate negatively with SiO2 (see figure) and positively with TiO2 and MgO. This global trend suggests that differentiation processes in magmatic arcs could explain bulk crustal Nb/Ta estimates. Understanding processes that govern fractionation of Nb from Ta in arcs can provide key insights on continental crust formation and help identify Earth's `missing' Nb reservoir. Ti-rich phases (rutile, titanite and ilmenite) have DNb/DTa values in the evolved liquid. Lack of correlation between Nb/Ta and K2O in global volcanic rocks implies that biotite plays a minor role in fractionating Nb from Ta during differentiation. Experimental petrology and evidence from exposed arc sections indicate that amphibole fractionation and delamination of island arc roots can explain the andesitic composition of bulk continental crust. Experimental studies have shown that amphibole Mg# correlate with DNb/DTa and amphibole could effectively fractionate Nb from Ta. Preliminary data from lower to middle crustal amphiboles from preserved arcs show sub- to super-chondritic Nb/Ta up to >60. This suggests that delamination of amphibole-rich cumulates can be a viable mechanism for the preferential removal of Nb from the continental crust. Future examination of Nb/Ta ratios in lower crustal amphiboles from various preserved arcs will provide improved constraints on the Nb-Ta paradox of the silicate Earth.

Elasticity of Pargasite Amphibole: A Hydrous Phase at Mid Lithospheric Discontinuity

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Peng, Y.; Mookherjee, M.

2017-12-01

Mid Lithospheric Discontinuity (MLD) is characterized by a low shear wave velocity ( 3 to 10 %). In cratons, the depth of MLD varies between 80 and 100 km. The reduction of the shear wave velocity at MLD is similar to what is observed in the lithosphere-asthenosphere boundary (LAB). Such low velocity at MLD could be caused by partial melting, temperature induced grain boundary sliding, changes in the elastic anisotropy, and/or metasomatism which may lead to the formation of hydrous phases including mica and amphibole. Thus, it is clear that in order to assess the role of metasomatism at MLD, we need better constraints on the elasticity of hydrous phases. However, such elasticity data are scarce. In this study, we explore elasticity of pargasite amphibole [NaCa2(Mg4Al)(Si6Al2)O22(OH)2] using density functional theory (DFT) with local density approximation (LDA) and generalized gradient approximation (GGA). We find that the pressure-volume results can be adequately described by a finite strain equation with the bulk modulus, K0 being 102 and 85 GPa for LDA and GGA respectively. We also determined the full elastic constant tensor (Cij) using the finite difference method. The bulk modulus, K0 determined from the full elastic constant tensor is 104 GPa for LDA and 87 GPa for GGA. The shear modulus, G0 determined from the full elastic constant tensor is 64 GPa for LDA and 58 GPa for GGA. The bulk and shear moduli predicted with LDA are 5 and 1 % stiffer than the recent results [1]. In contrast, the bulk and shear moduli predicted with GGA are 12 and 10 % softer compared to the recent results [1]. The full elastic constant tensor for pargasite shows significant anisotropy. For instance, LDA predicts compressional (AVP) and shear (AVS) wave anisotropy of 22 and 20 % respectively. At higher pressure, elastic moduli stiffen. However, temperature is likely to have an opposite effect on the elasticity and this remains largely unknown for pargasite. Compared to the major mantle

Mantle amphibole control on arc and within-plate chemical signatures: Quaternary lavas from Kurdistan Province, Iran

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Kheirkhah, M.; Allen, M. B.; Neill, I.; Emami, M. H.; McLeod, C.

2012-04-01

New analyses of Quaternary lavas from Kurdistan Province in west Iran shed light on the nature of collision zone magmatism. The rocks are from the Turkish-Iranian plateau within the Arabia-Eurasia collision. Compositions are typically basanite, hawaiite and alkali basalt. Sr-Nd isotope values are close to BSE, which is similar to Quaternary alkali basalts of NW Iran, but distinct from a depleted source melting under Mount Ararat. The chemical signatures suggests variable melting of two distinct sources. One inferred source produced melts with La/Nb from~3.5 to~1.2, which we model as the result of depletion of amphibole during ≤1% melting in the garnet stability field. We infer phlogopite in the source of potassic lavas from Takab. Lithosphere delamination or slab break-off mechanisms for triggering melting are problematic, as the lithosphere is~150-200km thick. It is possible that the negative dT/dP section of the amphibole peridotite solidus was crossed as a result of lithospheric thickening in the collision zone. This explanation is conditional upon the mantle source being weakly hydrated and so only containing a small proportion of amphibole, which can be exhausted during small degrees of partial melting. Our model maybe viable for other magmatic areas within orogenic plateaux, e.g. northern Tibet. Depletion of mantle amphibole may also help explain larger scale transitions from arc to within-plate chemistry in orogens, such as the Palaeogene Arabia-Eurasia system.

Different slip systems controlling crystallographic preferred orientation and intracrystalline deformation of amphibole in mylonites from the Neyriz mantle diapir, Iran

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Elyaszadeh, Ramin; Prior, David J.; Sarkarinejad, Khalil; Mansouri, Hadiseh

2018-02-01

A deformed layered gabbro and a mylonitic gabbro sample from the marginal shear zone of the Neyriz mantle diapir in Iran were analyzed using electron backscatter diffraction (EBSD). Both samples have the common amphibole crystallographic preferred orientation (CPO) in which (100) lies perpendicular to foliation and parallel to lineation. Amphibole grains in the layered gabbro sample have little internal deformation, whereas in the mylonitic gabbro sample the amphibole grains are strongly distorted and contain low angle grain boundaries. There is a subtle change in CPO as a function of grain size in the mylonitic gabbro. Coarse grains (porphyroclasts) have a (100) CPO oriented with the main foliation reference frame whilst fine grains have a (100) CPO oriented with the C‧ shear bands. Detailed analysis of porphyroclast distortions and subgrain boundary trace analysis suggests that hard slip systems, most particularly (110) control intracrystalline deformation. Schmid factor analysis suggest that these slip systems are not involved in foliation formation but are linked kinematically to C‧ shear bands. It is unlikely that the slip systems that control intracrystalline deformation are important in CPO formation. We interpret that subgrain rotation recrystallization lead to grain size reduction and the elongate recrystallized grains were rotated towards the C‧ shear bands by grain boundary sliding. This rigid body rotation, possibly in combination with easy slip on (100) are considered the main cause of CPO formation. Amphibole zonation patterns in the layered gabbro sample suggest that oriented growth of amphibole may have contributed to CPO.

Early Onset of Atypical Proliferative Lesions in the Lungs of a Libby Amphibole (LA) Exposed Rat Model of Cardiovascular Disease-Associated Iron Overlo

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Rationale: Miners and residents of Libby, Montana have increased incidences of asbestos-related diseases associated with exposure to amphibole contaminated vermiculite. Amphiboles have been shown to bind endogenous iron and modulate fiber induced inflammatory response. We hypoth...

Effects of Libby amphibole asbestos exposure on two rat models of rheumatoid arthritis

Science.gov (United States)

Epidemiological data suggests that occupational exposure to the amphibole-containing vermiculite in Libby, MT was associated with increased risk for developing autoimmune diseases and had an odds ratio of 3.23 for developing rheumatoid arthritis (RA). Our goal was to determine wh...

Origin of amphibole-rich beach sands from Tila-Mati, Karwar, central-west coast of India

Digital Repository Service at National Institute of Oceanography (India)

Mislankar, P.G.; Iyer, S.D.

The pocket beach at Tila-Mati, Karwar, central west coast of India, is characterised by the occurrence of amphibole-rich (chiefly tremolite-actinolite) coarse sand in the zone of minimal impact of waves and currents. In the total sediment, grain...

Origin of peraluminous minerals (corundum, spinel, and sapphirine) in a highly calcic anorthosite from the Sittampundi Layered Complex, Tamil Nadu, India

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Karmakar, Shreya; Mukherjee, Subham; Sanyal, Sanjoy; Sengupta, Pulak

2017-08-01

The highly calcic anorthosite (An>95) from the Sittampundi Layered Complex (SLC) develops corundum, spinel and sapphirine that are hitherto not reported from any anorthositic rocks in the world. Petrological observations indicate the following sequence of mineral growth: plagioclasematrix → corundum; clinopyroxene → amphibole; corundum + amphibole → plagioclasecorona + spinel; and spinel + corundum → coronitic sapphirine. Phase relations in the CaO-Na2O-Al2O3-SiO2-H2O (CNASH) system suggest that corundum was presumably developed through vapour present incongruent melting of the highly calcic plagioclase during ultra-high temperature (UHT) metamorphism ( T ≥ 1000 °C, P ≥ 9 kbar). Topological constraints in parts of the Na2O-CaO-MgO-Al2O3-SiO2-H2O (NCMASH) system suggest that subsequent to the UHT metamorphism, aqueous fluid(s) permeated the rock and the assemblage corundum + amphibole + anorthite + clinozoisite was stabilized during high-pressure (HP) metamorphism (11 ± 2 kbar, 750 ± 50 °C). Constraints of the NCMASH topology and thermodynamic and textural modeling study suggest that coronitic plagioclase and spinel formed at the expense of corundum + amphibole during a steeply decompressive retrograde P- T path (7-8 kbar and 700-800 °C) in an open system. Textural modeling studies combined with chemical potential diagrams (μSiO2-μMgO) in the MASH system support the view that sapphirine also formed from due to silica and Mg metasomatism of the precursor spinel ± corundum, on the steeply decompressive retrograde P- T path, prior to onset of significant cooling of the SLC. Extremely channelized fluid flow and large positive solid volume change of the stoichiometrically balanced sapphirine forming reaction explains the localized growth of sapphirine.

The LaPaz Icefield 04840 meteorite: Mineralogy, metamorphism, and origin of an amphibole- and biotite-bearing R chondrite

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McCanta, M. C.; Treiman, A. H.; Dyar, M. D.; Alexander, C. M. O.'D.; Rumble, D., III; Essene, E. J.

2008-12-01

The R chondrite meteorite LaPaz Icefield (LAP) 04840 is unique among metamorphosed, non-carbonaceous chondrites in containing abundant OH-bearing silicate minerals: ˜13% ferri-magnesiohornblende and ˜0.4% phlogopite by volume. Other minerals include olivine (Fo 62), orthopyroxene (En 69Fs 30Wo 1), albite (An 8Ab 90Or 2), magnetite, pyrrhotite, pentlandite, and apatite. Ferromagnesian minerals are rich in Fe 3+, as determined by Mössbauer spectrometry and electron microprobe chemical analyses. Fe 3+/Fe tot values are olivine ⩽5%, amphibole 80%, phlogopite 65%, and magnetite 42%. Mineral compositions are nearly constant across grains and the section, except for a small variability in amphibole compositions reflecting the edenite exchange couple ( ANa + IVAl ↔ A□ + Si). These mineral compositions, the absence of Fe-Ni metal, and the oxygen isotope data support its classification as an R (Rumuruti) chondrite. LAP 04840 is classified as petrologic grade 5, based on the chemical homogeneity of its minerals, and the presence of distinctly marked chondrules and chondrule fragments in a fine-grained crystalline matrix. The mineral assemblage of LAP 04840 allows calculation of physical and chemical conditions at the peak of its metamorphism: T = 670 ± 60 °C from a amphibole-plagioclase thermometer; PO between 250 and 500 bars as constrained by the assemblage phlogopite + orthopyroxene + olivine + feldspar and the absence of diopside; P unconstrained; f at QFM + 0.5 log units; log(f/fO)≈-5.8;log(f/fO)≈-3.3;andlog(f/f)≈-2.6. The hydrogen in LAP 04840 is very heavy, an average δD value of +3660 ± 75‰ in the magnesiohornblende. Only a few known sources of hydrogen have such high δD and are suitable sources for LAP 04840: ordinary chondrite phyllosilicates (as in the Semarkona chondrite), and insoluble organic matter (IOM) in ordinary chondrites and CR chondrites. Hydrogen from the IOM could have been released by oxidation, and then reacted with an anhydrous

Role of Cardiovascular Disease-associated iron overload in Libby amphibole-induced acute pulmonary injury and inflammation

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Pulmonary toxicity induced by asbestos is thought to be mediated through redox-cycling of fiber-bound and bioavailable iron (Fe). We hypothesized that Libby amphibole (LA)-induced cute lung injury will be exacerbated in rat models of cardiovascular disease (CVD)-associated Fe-ove...

Crystallography of hornblende amphibole in LAP04840 R chondrite and implication for its metamorphic history

International Nuclear Information System (INIS)

Ota, Kouhei; Mikouchi, Takashi; Sugiyama, Kazumasa

2009-01-01

LAP04840 is an unusual R chondrite that includes abundant hornblende amphibole. LAP04840 shows a texture of equilibrated chondrite composed of 59.3% olivine, 13.5% orthopyroxene, 13.3% hornblende, 6.2% plagio-clase, 6.0% Fe-Ni sulfide, and 1.7% accessory minerals. Hornblende replaces olivine and pyroxene in both chondrules and matrices, suggesting its secondary origin. All major phases in LAP04840 are homogeneous: olivine (Fa 37 ), orthopyroxene (En 70 Wo 1 ), and plagioclase (An 8 Or 2 ). Hornblende is also nearly homogeneous, but the total sum by electron microprobe analysis is 96-98 wt%, suggesting the presence of Fe 3+ and a hydroxyl group. Synchrotron Fe-XANES analysis gives a Fe 3+ /ΣFe ratio of ∼0.6 and micro-FT-IR analysis confirms the presence of a hydroxyl group. Thus, the structural formula is (Na 0.40 K 0 . 04 ) (Ca 1.46 Mn 0.02 Fe 0.06 2+ Na 0.46 ) (Al 0.08 Fe 0.43 2+ Fe 0.75 3+ Cr 0.08 Mg 3.60 ) (Si 7.02 Al 0.98 )O 22 (OH) 2 . Single crystal X-ray diffraction of LAP04840 hornblende gives the following lattice constants: a=9.7957(9) A, b=18.0788(12) A, c=5.2949(5) A, β=104.747(3)deg. The relatively short distances of [M(1)-O=2.069 A], [M(2)-O=2.081 A], and [M(3)-O=2.058 A] suggest the feasible preference of small Fe 3+ at these sites. The mineralogy and petrology of LAP04840 are consistent with its classification as an R6 chondrite. However, the presence of hornblende and biotite is quite unique among not only R chondrites but also asteroidal meteorites in general. The presence of these hydrous minerals suggests metamorphism under high pressure and an aqueous environment probably at depth in the parent body. A thermometer using hornblende and plagioclase equilibria gives T=670-690degC. Further, a barometer using Al content in hornblende gives P=∼0.1 GPa. Although these estimates bear some uncertainties, it is likely that the size of the R chondrite parent body was large enough to induce such metamorphism. (author)

New Insights into Trace Element Partitioning in Amphibole from Multiple Regression Analysis, with Application to the Magma Plumbing System of Mt. Lamington (Papua New Guinea)

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Zhang, J.; Humphreys, M.; Cooper, G.; Davidson, J.; Macpherson, C.

2015-12-01

We present a new multiple regression (MR) analysis of published amphibole-melt trace element partitioning data, with the aim of retrieving robust relationships between amphibole crystal-chemical compositions and trace element partition coefficients (D). We examined experimental data for calcic amphiboles of kaersutite, pargasite, tschermakite (Tsch), magnesiohornblende (MgHbl) and magnesiohastingsite (MgHst) compositions crystallized from basanitic-rhyolitic melts (n = 150). The MR analysis demonstrates the varying significance of amphibole major element components assigned to different crystallographic sites (T, M1-3, M4, A) as independent variables in controlling D, and it allows us to retrieve statistically significant relationships for REE, Y, Rb, Sr, Pb, Ti, Zr, Nb (n > 25, R2 > 0.6, p-value Ridolfi & Renzulli 2012) with lower Rb and Sr and higher Pb, relative to a hot, andesitic-dacitic melt (950-1,000±50 ºC; 60-70±5 wt % SiO2) where MgHst are crystallized. REE and Nb contents are similar in both types of melts despite higher REE and Nb in MgHbl-Tsch. Therefore, the REE compositional disparity between MgHst and MgHbl-Tsch is driven by the difference in the DREE, rather than the melt REE concentrations.

Amphiboles as indicators of mantle source contamination: Combined evaluation of stable H and O isotope compositions and trace element ratios

NARCIS (Netherlands)

Demény, A.; Harangi, S.; Vennemann, T.W.; Casillas, R.; Horváth, P.; Milton, A.J.; Mason, P.R.D.; Ulianov, A.

2012-01-01

Stable isotope and trace element compositions of igneous amphiboles from different tectonic settings (ocean island basalts, intraplate alkaline basalts, subduction-related andesitic complexes) were compiled to help understand the role of fluids and melts in subduction-related mantle metasomatism

Mineralogy and Morphology of Amphiboles Observed in Soils and Rocks in El Dorado Hills, California

Science.gov (United States)

Meeker, G.P.; Lowers, H.A.; Swayze, G.A.; Van Gosen, B. S.; Sutley, S.J.; Brownfield, I.K.

2006-01-01

From the Executive Summary: At the request of the U.S. Environmental Protection Agency (USEPA), the U.S. Geological Survey (USGS) has conducted an independent study of amphiboles in rocks and soils in the El Dorado Hills, California, area. The purpose of this study is to investigate specific issues regarding the presence of 'naturally occurring asbestos' raised by an USEPA activity-based sampling study and subsequent criticisms of that study outlined in a review prepared by The R.J. Lee Group (RJLG).

High Caloric Diet for ALS Patients: High Fat, High Carbohydrate or High Protein

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Sarvin Sanaie

2015-01-01

Full Text Available ALS is a fatal motor neurodegenerative disease characterized by muscle atrophy and weakness, dysarthria, and dysphagia. The mean survival of ALS patients is three to five years, with 50% of those diagnosed dying within three years of onset (1. A multidisciplinary approach is crucial to set an appropriate plan for metabolic and nutritional support in ALS. Nutritional management incorporates a continuous assessment and implementation of dietary modifications throughout the duration of the disease. The nutritional and metabolic approaches to ALS should start when the diagnosis of ALS is made and should become an integral part of the continuous care to the patient, including nutritional surveillance, dietary counseling, management of dysphagia, and enteral nutrition when needed. Malnutrition and lean body mass loss are frequent findings in ALS patients necessitating comprehensive energy requirement assessment for these patients. Malnutrition is an independent prognostic factor for survival in ALS with a 7.7 fold increase in risk of death. Malnutrition is estimated to develop in one quarter to half of people with ALS (2. Adequate calorie and protein provision would diminish muscle loss in this vulnerable group of patients. Although appropriate amount of energy to be administered is yet to be established, high calorie diet is expected to be effective for potential improvement of survival; ALS patients do not normally receive adequate  intake of energy. A growing number of clinicians suspect that a high calorie diet implemented early in their disease may help people with ALS meet their increased energy needs and extend their survival. Certain high calorie supplements appear to be safe and well tolerated by people with ALS according to studies led by Universitäts klinikum Ulm's and, appear to stabilize body weight within 3 months. In a recent study by Wills et al., intake of high-carbohydrate low-fat supplements has been recommended in ALS patients (3

Plastic deformation of Al13Fe4 particles in Al-Al13Fe4 by high-speed compression

International Nuclear Information System (INIS)

Yoneyama, N.; Mizoguchi, K.; Kumai, S.; Sato, A.; Kiritani, M.

2003-01-01

Spray-formed Al-Fe alloys having undergone high-speed deformation were examined under a high-voltage electron microscope. Two types of specimens were examined; one containing fine Al 13 Fe 4 particles, and the other containing large particles. In the former specimen, deformation is found to proceed in three patterns, depending on specimen thickness and strain rate: (1) without deformation of the Al 13 Fe 4 ; (2) breaking of the Al 13 Fe 4 ; or (3) melting of the Al 13 Fe 4 . Local melting is found to alter some of the Al 13 Fe 4 particles, to impart five-fold symmetry in diffraction or an amorphous structure. In the latter specimen, introduction of glide dislocations enabled us to determine a shear system in the mc102 monoclinic c2/m crystal of Al 13 Fe 4 . On the bases of these observations, the mechanism of high-speed deformation is discussed while taking into account the highly stressed and/or heated states of Al 13 Fe 4 embedded in Al matrix

Exposure to Sumas Mountain chrysotile induces similar gene expression changes as Libby Amphibole but has greater effect on long-term pathology and lung function

Science.gov (United States)

This study was designed to provide understanding of the toxicity of naturally occurring asbestos (NOA) including Libby amphibole (LA), Sumas Mountain chrysotile (SM), El Dorado Hills tremolite (ED) and Ontario ferroactinolite cleavage fragments (ON). Rat-respirable fractions (aer...

Characterization of Libby, MT amphibole (LA) elongated particles for toxicology studies: Field Collection, sample preparation, dose characterization, and particle counting methods using SEM/EDS

Science.gov (United States)

Since 1999, the US EPA and USGS have been studying the chemistry, mineralogy, and morphology of the amphiboles from the Rainy Creek Complex of Libby, MT (LA), following an increased incidence of lung and pleural diseases. LA material collected in 2000 (LA2000) was described in M...

Design of high-temperature high-strength Al-Ti-V-Zr alloys

International Nuclear Information System (INIS)

Lee, H.M.

1990-01-01

This paper reports that it seems plausible to develop high-strength Al-base alloys useful up to 698K in view of the behavior of nickel base superalloys which resist degradation of mechanical properties to 75 pct of their absolute melting temperature. For high temperature Al alloys, the dispersed hardening phase must not undergo phase transformation to an undesirable phase during long time exposure at the temperature of interest. An additional factor to be considered is the stability of the hardening phase with respect to Ostwald ripening. This coarsening resistance is necessary so that the required strength level can be maintained after the long-time service at high temperatures. The equilibrium crystal structures of Al 3 Ti, Al 3 V and Al 3 Zr are tetragonal D0 22 , D0 22 and D0 23 , respectively. At the temperatures of interest, around 698K, vanadium and titanium are mutually substitutable in the form of Al 3 (Ti, V). Much of titanium and vanadium can be substituted for zirconium in the D0 23 - type Al 3 Zr compound, creating Al 3 (Ti, Zr) and Al 3 (V, Zr), respectively. In particular, it has been reported that fcc L1 2 -structured Al 3 M dispersoids form in the rapidly solidified Al-V-Zr and Al-Ti-Zr systems and both L1 2 and D0 23 -structured Al 3 M phases showed slow coarsening kinetics

Synthesis and characterization of high volume fraction Al-Al2O3 nanocomposite powders by high-energy milling

International Nuclear Information System (INIS)

Prabhu, B.; Suryanarayana, C.; An, L.; Vaidyanathan, R.

2006-01-01

Al-Al 2 O 3 metal matrix composite (MMC) powders with volume fractions of 20, 30, and 50% Al 2 O 3 were synthesized by high-energy milling of the blended component powders. The particle sizes of Al 2 O 3 studied were 50 nm, 150 nm, and 5 μm. A uniform distribution of the Al 2 O 3 reinforcement in the Al matrix was successfully obtained after milling the powders for a period of 20 h at a ball-to-powder ratio of 10:1 in a SPEX mill. The uniform distribution of Al 2 O 3 in the Al matrix was confirmed by characterizing these nanocomposite powders by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-ray mapping, and X-ray diffraction (XRD) techniques

Constraints on the Chemistry and Abundance of Hydrous Phases in Sub Continental Lithospheric Mantle: Implications for Mid-Lithospheric Discontinuities

Science.gov (United States)

Saha, S.; Dasgupta, R.; Fischer, K. M.; Mookherjee, M.

2017-12-01

The origins of a 2-10% reduction in seismic shear wave velocity (Vs) at depths of 60-160 km in sub continental lithospheric mantle (SCLM) regions, identified as the Mid Lithospheric Discontinuity (MLD) [e.g., 1] are highly debated [e.g., 2, 3]. One of the proposed explanations for MLDs is the presence of hydrous minerals such as amphibole and phlogopite at these depths [e.g., 2, 4, 5]. Although the stability and compositions of these phases in peridotite + H2O ± CO2 have been widely explored [e.g., 6], their composition and abundance as a function of permissible SCLM chemistry remain poorly understood. We have compiled phase equilibria experiments conducted over a range of pressure (0.5-8 GPa), temperature (680-1300 °C), major element peridotite compositions, and volatiles (H2O: 0.05-13.79 wt.% and CO2: 0.25-5.3 wt.%). The goal was to constrain how compositional parameters such as CaO and alkali/H2O affect the chemistry and abundance of amphibole and phlogopite. We observe that the abundance of amphibole increases with CaO content and decreasing alkali/H2O. The abundance of phlogopite varies directly with K2O content. Unlike phlogopite compositions that remain consistent, amphibole compositions show variability (pargastitic to K-richterite) depending on bulk CaO and Na2O. Mineral modes, obtained by mass balance on a melt/fluid free basis, were used to calculate aggregate shear wave velocity, Vs for the respective assemblages [e.g., 7] and compared with absolute values observed at MLD depths [e.g., 8]. Vs shows a strong inverse correlation with phlogopite and amphibole modes (particularly where phlogopite is absent). For the Mg# range of cratonic xenoliths, 5-10% phlogopite at MLD depths can match the observed Vs values, while CaO contents in cratonic xenoliths limit the amphibole abundance to 10%, which is lower than previous estimates based on heat flow calculations [e.g., 4]. The modes of hydrous and other phases and corresponding Vs values could be used to

Dynamics of metamorphism processes by the fractal textures analysis of garnets, amphiboles and pyroxenes of Lapland Granulite Belt, Kola Peninsula

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Miłosz A. Huber

2012-01-01

Full Text Available About thousand analyzes of garnet, amphibole and pyroxene crystals from selected samples of amphibolite and granulite rocks from Lapland Granulite Belt in Kandalaksha region (Kola Peninsula has been made. Indicated fractal-box dimension of studied minerals has a good correlation with tectonic zones, lead to a new insight in the dynamics of processes, which has modified the examined region. Fractal-box dimension makes the textural analysis more precise, because it consents for the mathematic and repeated review of crystals topology depending directly on processes which had created them.

Prevention of disease caused by fluoro-edenite fibrous amphibole: the way forward

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Caterina Bruno

2015-06-01

Full Text Available Few months after the publication of the monographic section of Annali dell'Istituto Superiore di Sanità second issue of 2014 "Health impact of fibres with fluoro-edenitic composition", the carcinogenicity of fluoro-edenite was assessed by the International Agency for Research on Cancer (IARC in the frame of Monograph 111. The IARC Working Group concluded that there is sufficient evidence in humans that exposure to fluoroedenite fibrous amphibole causes mesothelioma, and sufficient evidence of carcinogenicity in experimental animals. Fluoro-edenite was allocated to Group 1 (the agent is carcinogenic to humans. Now, in view of the recent IARC evaluation, preventive action in Biancavilla requires an upgrade. First of all, environmental monitoring has to be further implemented. All operations of house cleaning should be performed employing wet tools, in order to avoid dust-raising. It is very important that environmental and biological monitoring be related to epidemiological surveillance. The recently approved act of the Sicilian Government concerning a plan of health interventions in Biancavilla will favour cooperation between national, regional and local health institutions with the common goal of improving the quality and appropriateness of diagnostic and therapeutics procedures offered by the health services.

Particle Size Characterization of Water-Elutriated Libby Amphibole 2000 and RTI International Amosite

Science.gov (United States)

Lowers, Heather; Bern, Amy M.

2009-01-01

This report presents data on particle characterization analyzed by scanning electron microscopy on Libby amphibole collected by the U.S. Geological Survey in 2000 (LA2000) and amosite material collected by RTI International (RTI amosite). The particle characterization data were generated to support a portion of the Libby Action Plan. Prior to analysis, the raw LA2000 and RTI amosite materials were subjected to a preparation step. Each sample was water-elutriated by U.S. Environmental Protection Agency (USEPA) Office of Research and Development, Research Triangle Park using the methods generally described in another published report and then delivered to the U.S. Geological Survey, Denver Microbeam Laboratory for analysis. Data presented here represent analyses performed by the U.S. Geological Survey, Denver Microbeam Laboratory and USEPA National Enforcement Investigations Center. This report consists of two Excel spreadsheet files developed by USEPA, Region 8 Superfund Technical Assistance Unit and describe the particle size characterization of the LA2000 and RTI amosite, respectively. Multiple tabs and data entry cells exist in each spreadsheet and are defined herein.

High Temperature Mechanical Constitutive Modeling of a High-Nb TiAl Alloy

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DONG Chengli

2018-02-01

Full Text Available Uniaxial tensile, low cycle fatigue, fatigue-creep interaction and creep experiments of a novel high-Nb TiAl alloy (i.e. Ti-45Al-8Nb-0.2W-0.2B-0.02Y (atom fraction/% were conducted at 750℃ to obtain its tested data and curves. Based on Chaboche visco-plasticity unified constitutive model, Ohno-Wang modified non-linear kinematic hardening was introduced in Chaboche constitutive model to describe the cyclic hardening/softening, and Kachanov damage was coupled in Chaboche constitutive model to characterize the accelerated creep stage. The differential equations of the constitutive model discretized by explicit Euler method were compiled in to ABAQUS/UMAT to simulate the mechanical behavior of high-Nb TiAl alloy at different test conditions. The results show that Chaboche visco-plasticity unified constitutive model considering both Ohno-Wang modified non-linear kinematic hardening and Kachanov damage is able to simulate the uniaxial tensile, low cycle fatigue, fatigue-creep interaction and creep behavior of high-Nb TiAl alloy and has high accuracy.

Tracing high-pressure metamorphism in marbles: Phase relations in high-grade aluminous calcite-dolomite marbles from the Greek Rhodope massif in the system CaO-MgO-Al 2O 3-SiO 2-CO 2 and indications of prior aragonite

Science.gov (United States)

Proyer, A.; Mposkos, E.; Baziotis, I.; Hoinkes, G.

2008-08-01

Four different types of parageneses of the minerals calcite, dolomite, diopside, forsterite, spinel, amphibole (pargasite), (Ti-)clinohumite and phlogopite were observed in calcite-dolomite marbles collected in the Kimi-Complex of the Rhodope Metamorphic Province (RMP). The presence of former aragonite can be inferred from carbonate inclusions, which, in combination with an analysis of phase relations in the simplified system CaO-MgO-Al 2O 3-SiO 2-CO 2 (CMAS-CO 2) show that the mineral assemblages preserved in these marbles most likely equilibrated at the aragonite-calcite transition, slightly below the coesite stability field, at ca. 720 °C, 25 kbar and aCO 2 ~ 0.01. The thermodynamic model predicts that no matter what activity of CO 2, garnet has to be present in aluminous calcite-dolomite-marble at UHP conditions.

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

Science.gov (United States)

Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

2014-08-01

Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

Science.gov (United States)

Lin, Tse Yang; Chung, Yee Ling; Li, Lin; Yao, Shude; Lee, Y. C.; Feng, Zhe Chuan; Ferguson, Ian T.; Lu, Weijie

2010-08-01

AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Science.gov (United States)

Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

2017-03-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

OpenAIRE

Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

2017-01-01

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

International Nuclear Information System (INIS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

2014-01-01

Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

International Nuclear Information System (INIS)

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

2010-01-01

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

International Nuclear Information System (INIS)

Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

2010-01-01

A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

High-temperature resistant MeCrAlY+Al coatings obtained by ARC-PVD method on Ni Base superalloys

International Nuclear Information System (INIS)

Swadzba, L.; Maciejny, A.; Mendala, B.; Supernak, W.

1999-01-01

Investigations of obtaining high temperature coatings on the Ni base superalloys by the ARC-PVD method, using exothermic reaction processes between Ni and Al with NiAl intermetallic formation are presented in the article. By the diffusion heating at 1050 o C NiAl high temperature diffusion coating containing 21% at. Al and 50 μm thick was obtained. In the next stage coatings with more complex chemical composition NiCoCrAlY were formed. The two targets were applied for formation of complex NiCoCrAlY coatings. The good consistence between the chemical composition of the targets and the coatings and an uniform distribution of elements in the coatings were shown. Then the surface was covered with aluminium also by the ARC-PVD method. In the vacuum chamber of the equipment a synthesis reaction between NiCoCrAlY and Al with the formation NiAl intermetallics of high Co, Cr, Y content was initiated by the changes in process parameters. The final heat treatment of coatings was conducted in the air and vacuum at 1050 o C. The strong segregation of yttrium in to the oxide scale in the specimens heated in the air was shown. It was possible to obtain NiAl intermetallic phase coatings modified by Co, Cr and Y by the ARC-PVD method. An example of the application of this method for the aircraft engine turbine blades was presented. Method of ARC-PVD gives the possibility chemical composition and high resistance to oxidizing and hot corrosion. (author)

The high-pressure phase of CePtAl

International Nuclear Information System (INIS)

Heymann, Gunter; Heying, Birgit; Rodewald, Ute C.; Janka, Oliver; Univ. Oldenburg

2017-01-01

The intermetallic aluminum compound HP-CePtAl was synthesized by arc melting of the elements with subsequent high-pressure/high-temperature treatment at 1620 K and 10.5 GPa in a multianvil press. The compound crystallizes in the hexagonal MgZn_2-type structure (P6_3/mmc) with lattice parameters of a=552.7(1) and c=898.8(2) pm refined from powder X-ray diffraction data. With the help of single crystal investigations (wR=0.0527, 187 F"2 values, 13 variables), the proposed structure type was confirmed and the mixed Pt/Al site occupations could be refined. Magnetic susceptibility measurements showed a disappearance of the complex magnetic ordering phenomena, which are observed in NP-CePtAl.

The high-pressure phase of CePtAl

Energy Technology Data Exchange (ETDEWEB)

Heymann, Gunter [Univ. Innsbruck (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie; Heying, Birgit; Rodewald, Ute C. [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie; Janka, Oliver [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie; Univ. Oldenburg (Germany). Inst. fuer Chemie

2017-03-01

The intermetallic aluminum compound HP-CePtAl was synthesized by arc melting of the elements with subsequent high-pressure/high-temperature treatment at 1620 K and 10.5 GPa in a multianvil press. The compound crystallizes in the hexagonal MgZn{sub 2}-type structure (P6{sub 3}/mmc) with lattice parameters of a=552.7(1) and c=898.8(2) pm refined from powder X-ray diffraction data. With the help of single crystal investigations (wR=0.0527, 187 F{sup 2} values, 13 variables), the proposed structure type was confirmed and the mixed Pt/Al site occupations could be refined. Magnetic susceptibility measurements showed a disappearance of the complex magnetic ordering phenomena, which are observed in NP-CePtAl.

High-temperature deformation of B2 NiAl-base alloys

International Nuclear Information System (INIS)

Lee, I.G.; Ghosh, A.K.

1994-01-01

The high-temperature deformation behavior of three rapidly solidified and processed NiAl-base alloys--NiAl, NiAl containing 2 pct TiB 2 , and NiAl containing 4 pct HfC--have been studied and their microstructural and textural changes during deformation characterized. Compressions tests were conducted at 1,300 and 1,447 K at strain rates ranging from 10 -6 to 10 -2 s -1 . HfC-containing material showed dispersion strengthening as well as some degree of grain refinement over NiAl, while TiB 2 dispersoid-containing material showed grain refinement as well as secondary recrystallization and did not improve high-temperature strength. Hot-pack rolling was also performed to develop thin sheet materials (1.27-mm thick) and from these alloys. Without dispersoids, NiAl rolled easily at 1,223 K and showed low flow stress and good ductility during the hot-rolling operation. Rolling of dispersoid-containing alloys was difficult due to strain localization and edge-cracking effects, resulting partly from the high flow stress at the higher strain rate during the rolling operation. Sheet rolling initially produced a {111} texture, which eventually broke into multiple-texture components with severe deformation

Blueschist metamorphism and its tectonic implication of Late Paleozoic-Early Mesozoic metabasites in the mélange zones, central Inner Mongolia, China

Science.gov (United States)

Zhang, Jinrui; Wei, Chunjing; Chu, Hang

2015-01-01

Blueschists in central Inner Mongolia are distributed as layers and blocks in mélanges including the southern zone in Ondor Sum area and the northern zone in Manghete and Naomuhunni areas. They have been attributed to the subduction of Early Paleozoic oceanic crust. Blueschists from Ondor Sum and Naomuhunni are characterized by occurrence of sodic amphibole coexisting with epidote, albite, chlorite, calcic amphibole (in Ondor Sum) and muscovite (in Naomuhunni). Blueschists in Manghete contain porphyroblastic albite with inclusions of garnet and epidote in a matrix dominated by calcic-sodic amphibole, epidote, chlorite, albite and muscovite. Phase equilibria modeling for three blueschist samples using pseudosection suggest that the AlM2 contents in sodic amphibole can be used as a good barometer in the limited assemblage involving sodic amphibole + actinolite + epidote + chlorite + albite + quartz under pressures 7-10 kbar. In the sodic amphibole-bearing assemblages, the NaM4 contents in sodic amphibole mainly decrease as temperature rises, being a potential thermometry. The calculated pseudosections constrain the P-T conditions of blueschists to be 3.2-4.2 kbar/355-415 °C in Ondor Sum, 8.2-9.0 kbar/455 °C-495 °C in Manghete and 6.6-8.1 kbar/420-470 °C in Naomuhunni. These P-T estimates indicate a rather high geothermal gradient of 18-25 °C/km for the blueschist metamorphism, being of intermediate P/T facies series. Available zircon U-Pb age data suggests that the protoliths of blueschists were formed later than Late Paleozoic-Early Mesozoic and metamorphosed soon afterwards. An alternative interpretation for the tectonic implication of blueschists in central Inner Mongolia is that they may be a new type attributed to closure of limited ocean basins and do not represent a tectonic regime occurred in conventional subduction setting.

Highly Efficient Four-Wave Mixing in an AlGaAs-On-Insulator (AlGaAsOI) Nano-Waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Ottaviano, Luisa; Semenova, Elizaveta

2015-01-01

We propose an AlGaAs-on-insulator platform for nonlinear integrated photonics. We demonstrate highly efficient four-wave mixing in a 3-mm long AlGaAs-on-insulator nanowaveguide. A conversion efficiency of -21.1 dB is obtained with only a 45-mW pump......We propose an AlGaAs-on-insulator platform for nonlinear integrated photonics. We demonstrate highly efficient four-wave mixing in a 3-mm long AlGaAs-on-insulator nanowaveguide. A conversion efficiency of -21.1 dB is obtained with only a 45-mW pump...

High pressure studies of A2Mo3O12 negative thermal expansion materials (A2=Al2, Fe2, FeAl, AlGa)

International Nuclear Information System (INIS)

Young, Lindsay; Gadient, Jennifer; Gao, Xiaodong; Lind, Cora

2016-01-01

High pressure powder X-ray diffraction studies of several A 2 Mo 3 O 12 materials (A 2 =Al 2 , Fe 2 , FeAl, and AlGa) were conducted up to 6–7 GPa. All materials adopted a monoclinic structure under ambient conditions, and displayed similar phase transition behavior upon compression. The initial isotropic compressibility first became anisotropic, followed by a small but distinct drop in cell volume. These patterns could be described by a distorted variant of the ambient pressure polymorph. At higher pressures, a distinct high pressure phase formed. Indexing results confirmed that all materials adopted the same high pressure phase. All changes were reversible on decompression, although some hysteresis was observed. The similarity of the high pressure cells to previously reported Ga 2 Mo 3 O 12 suggested that this material undergoes the same sequence of transitions as all materials investigated in this paper. It was found that the transition pressures for all phase changes increased with decreasing radius of the A-site cations. - Graphical abstract: Overlay of variable pressure X-ray diffraction data of Al 2 Mo 3 O 12 collected in a diamond anvil cell. Both subtle and discontinuous phase transitions are clearly observed. - Highlights: • The high pressure behavior of A 2 Mo 3 O 12 (A=Al, Fe, (AlGa), (AlFe)) was studied. • All compounds undergo the same sequence of pressure-induced phase transitions. • The phase transition pressures correlate with the average size of the A-site cation. • All transitions were reversible with hysteresis. • Previously studied Ga 2 Mo 3 O 12 undergoes the same sequence of transitions.

High temperature oxidation behavior of TiAl-based intermetallics

International Nuclear Information System (INIS)

Stroosnijder, M.F.; Sunderkoetter, J.D.; Haanappel, V.A.C.

1996-01-01

TiAl-based intermetallic compounds have attracted considerable interest as structural materials for high-temperature applications due to their low density and substantial mechanical strength at high temperatures. However, one major drawback hindering industrial application arises from the insufficient oxidation resistance at temperatures beyond 700 C. In the present contribution some general aspects of high temperature oxidation of TiAl-based intermetallics will be presented. This will be followed by a discussion of the influence of alloying elements, in particular niobium, and of the effect of nitrogen in the oxidizing environment on the high temperature oxidation behavior of such materials

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

Directory of Open Access Journals (Sweden)

Xingpeng Liu

2017-12-01

Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

CNTs/Al5083 Composites of High-performance Uniform and Dispersion Fabricated by High-energy Ball-milling

Directory of Open Access Journals (Sweden)

GUO Li

2017-11-01

Full Text Available Carbon nanotubes (CNTs, mass fraction of 0%-2% reinforced Al5083 composites were fabricated by horizontal high-energy ball milling. The effects of ball milling time and CNTs contents on the properties of composite materials were studied. The micro morphology of CNTs/Al5083 composites was characterized by scanning electron microscopy(SEM and transmission electron microscopy(TEM, the tensile strength and microhardness of the composites were tested. The results indicate that after high-energy ball milling for 1.5h, the carbon nanotubes are dispersed homogeneously in the Al5083 matrix, and good interfacial bonding strength between CNTs and Al5083 is obtained at the addition of 1.5%CNTs. Under these conditions, the tensile strength and microhardness of CNTs/Al5083 composites are 188.8MPa and 136HV, respectively. Compared to Al5083 matrix without CNTs reinforcement, tensile strength and microhardness of CNTs/Al5083 composites are increased by 32.2% and 36%, respectively.

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Science.gov (United States)

Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

2017-04-01

In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

Science.gov (United States)

Cörekçi, S; Usanmaz, D; Tekeli, Z; Cakmak, M; Ozçelik, S; Ozbay, E

2008-02-01

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

Low-loss high-confinement waveguides and microring resonators in AlGaAs-on-insulator

DEFF Research Database (Denmark)

Ottaviano, Luisa; Pu, Minhao; Semenova, Elizaveta

2016-01-01

AlGaAs is a promising material for integrated nonlinearphotonics due to its intrinsic high nonlinearity. However,the challenging fabrication of deep etched AlGaAs devices makes it difficult to realize high-performance devices such as low-loss dispersion engineered waveguides and high quality...... microring resonators. Here, we report a process tomake high-quality AlGaAs-on-insulator (AlGaAsOI) waferswhere high confinement waveguides can be realized. Using optimized patterning processes, we fabricated AlGaAsOI waveguides with propagation losses as low as 1 dB/cmand microring resonators with quality...

crustal shear zone

Indian Academy of Sciences (India)

Textural modeling integrating the textural features and balanced chemical reaction of the calc-silicate ... The style and geometry of the .... analyses return the following amphibole forming reaction: ... based on total Al (AlT) content in hornblende.

Cast Aluminum Alloys for High Temperature Applications Using Nanoparticles Al2O3 and Al3-X Compounds (X = Ti, V, Zr)

Science.gov (United States)

Lee, Jonathan A.

2009-01-01

In this paper, the effect of nanoparticles Al2O3 and Al3-X compounds (X = Ti, V, Zr) on the improvement of mechanical properties of aluminum alloys for elevated temperature applications is presented. These nanoparticles were selected based on their low cost, chemical stability and low diffusions rates in aluminum at high temperatures. The strengthening mechanism at high temperature for aluminum alloy is based on the mechanical blocking of dislocation movements by these nanoparticles. For Al2O3 nanoparticles, the test samples were prepared from special Al2O3 preforms, which were produced using ceramic injection molding process and then pressure infiltrated by molten aluminum. In another method, Al2O3 nanoparticles can also be homogeneously mixed with fine aluminum powder and consolidated into test samples through hot pressing and sintering. With the Al3-X nanoparticles, the test samples are produced as precipitates from in-situ reactions with molten aluminum using conventional permanent mold or die casting techniques. It is found that cast aluminum alloy using nanoparticles Al3-X is the most cost effective method to produce high strength aluminum alloys for high temperature applications in comparison to nanoparticles Al2O3. Furthermore, significant mechanical properties retention in high temperature environment could be achieved with Al3-X nanoparticles, resulting in tensile strength of nearly 3 times higher than most 300- series conventional cast aluminum alloys tested at 600 F.

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

2012-01-01

Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

High-brightness beamline for x-ray spectroscopy at the ALS

Energy Technology Data Exchange (ETDEWEB)

Perera, R.C.C.; Jones, G. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States); Lindle, D.W. [Univ. of Nevada, Las Vegas, NV (United States)

1997-04-01

Beamline 9.3.1 at the Advanced Light Source (ALS) is a windowless beamline, covering the 1-6 keV photon-energy range, designed to achieve the goals of high energy resolution, high flux, and high brightness at the sample. When completed later this year, it will be the first ALS monochromatic hard x-ray beamline, and its brightness will be an order of magnitude higher than presently available in this energy range. In addition, it will provide flux and resolution comparable to any other beamline now in operation. To achieve these goals, two technical improvements, relative to existing x-ray beamlines, were incorporated. First, a somewhat novel optical design for x-rays, in which matched toroidal mirrors are positioned before and after the double-crystal monochromator, was adopted. This configuration allows for high resolution by passing a collimated beam through the monochromator, and for high brightness by focusing the ALS source on the sample with unit magnification. Second, a new {open_quotes}Cowan type{close_quotes} double-crystal monochromator based on the design used at NSLS beamline X-24A was developed. The measured mechanical precision of this new monochromator shows significant improvement over existing designs, without using positional feedback available with piezoelectric devices. Such precision is essential because of the high brightness of the radiation and the long distance (12 m) from the source (sample) to the collimating (focusing) mirror. This combination of features will provide a bright, high resolution, and stable x-ray beam for use in the x-ray spectroscopy program at the ALS.

High-Throughput Investigation of a Lead-Free AlN-Based Piezoelectric Material, (Mg,Hf)xAl1-xN.

Science.gov (United States)

Nguyen, Hung H; Oguchi, Hiroyuki; Van Minh, Le; Kuwano, Hiroki

2017-06-12

We conducted a high-throughput investigation of the fundamental properties of (Mg,Hf) x Al 1-x N thin films (0 piezoelectric materials. For the high-throughput investigation, we prepared composition-gradient (Mg,Hf) x Al 1-x N films grown on a Si(100) substrate at 600 °C by cosputtering AlN and MgHf targets. To measure the properties of the various compositions at different positions within a single sample, we used characterization techniques with spatial resolution. X-ray diffraction (XRD) with a beam spot diameter of 1.0 mm verified that Mg and Hf had substituted into the Al sites and caused an elongation of the c-axis of AlN from 5.00 Å for x = 0 to 5.11 Å for x = 0.24. In addition, the uniaxial crystal orientation and high crystallinity required for piezoelectric materials to be used as application devices were confirmed. The piezoelectric response microscope indicated that this c-axis elongation increased the piezoelectric coefficient almost linearly from 1.48 pm/V for x = 0 to 5.19 pm/V for x = 0.24. The dielectric constants of (Mg,Hf) x Al 1-x N were investigated using parallel plate capacitor structures with ∼0.07 mm 2 electrodes and showed a slight increase by substitution. These results verified that (Mg,Hf) x Al 1-x N is a promising material for piezoelectric-based application devices, especially for vibrational energy harvesters.

Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

International Nuclear Information System (INIS)

Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

2016-01-01

The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

Preparation of highly oriented Al:ZnO and Cu/Al:ZnO thin films by sol-gel method and their characterization

Energy Technology Data Exchange (ETDEWEB)

Vijayaprasath, G.; Murugan, R. [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan); Ravi, G., E-mail: gravicrc@gmail.com [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India)

2015-11-15

Highly oriented thin films of Al doped ZnO (Al:ZnO) and Cu co-doped Al:ZnO (Cu/Al:ZnO) thin films were successfully deposited by sol–gel spin coating on glass substrates. The deposited films were characterized using X-ray diffraction analysis and found to exhibit hexagonal wurtzite structure with c-axis orientation. SEM images revealed that hexagonal rod shaped morphologies were grown perpendicular to the substrate surface due to repeated deposition process. High transmittance values were observed for pure ZnO compared to Al:ZnO and Cu/Al:ZnO thin films. The band gap widening is caused by the increase of carrier concentration, which is believed to be due to Burstein-Moss effect due to Al and Cu doping. PL spectra of Cu/Al:ZnO thin films indicate that the UV emission peaks slightly shifted towards lower energy side. XPS study was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O thin films to analyze the binding energy of Al, Cu, Zn and O. Magnetic measurement studies exhibited ferromagnetic behavior at room temperature, which may be due to the increase in copper concentration in the doped films. The ferromagnetic behavior can be understood from the exchange coupling between localized ‘d’ spin of Cu ion mediated by free delocalized carriers. - Highlights: • High quality of Al:ZnO and Cu co-doped Al:ZnO thin films were fabricated by sol–gel method. • The XRD analyses revealed that the deposited thin films have hexagonal wurtzite structure. • XPS was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O films to analyze the binding energy of Al, Cu, Zn and O. • SEM studies were made for Al:ZnO and Cu/Al:ZnO thin films. • RTFM was observed in Cu co-doped Al:ZnO thin films.

Preparation and investigation of nano-AlN lubricant with high performance

Energy Technology Data Exchange (ETDEWEB)

Tao, Yu; Tao, Yuxiao; Wang, Biaobing [School of Materials Science and Engineering, Changzhou University, Changzhou 201326 (China); Tai, Yanlong, E-mail: ytai@ucdavis.edu [Department of Biomedical Engineering, University of California Davis, Davis, CA 95616 (United States)

2014-09-15

A new kind of macromolecular coupling agent (LMW-a-PP-g-MAH) of maleic anhydride (MAH) onto low-molecular-weight atactic polypropylene (LMW-a-PP) was synthesized according to molecular design and was used as modifier for surface modification of nano-Aluminum nitride (AlN) by a high-pressure homogenization (HPH) process. IR was conducted to confirm the chemical structure of the step products of LMW-a-PP-g-MAH. The availability as a modifier for surface modification of nano-AlN was distinguished by Fourier transform infrared spectroscopy (FTIR), particle size analysis, transmission electron microscope (TEM), thermogravimetric analysis (TGA), contact angle experiments and the dispersion stability in dimethylbenzene and Greatwall lubrication oil. It can be inferred that the optimal loading is 10 wt. %–12 wt. % of LMW-a-PP-g-MAH to modify nano-AlN particles. Nano-AlN lubricating composite materials (LMW-a-PP-g-MAH-AlN) was used to improve the antifriction performance and the load capability of Greatwall lubrication oil, and maximum non-seizure load (P{sub B}) can increase highly from 1000 N to 1490 N when the loading is 0.3 wt. %. - Highlights: • Design and synthesis of macromolecular coupling agent (a-PP-g-MAH). • Surface modification and characterization of nano-AlN by HPH process. • Preparation and investigation of nano-AlN/lubricating oil with high performance.

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

International Nuclear Information System (INIS)

Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

2010-01-01

The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

International Nuclear Information System (INIS)

Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

2015-01-01

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

The evaluation of physico-chemical parameters of the Nasrand Plutonic complex by using mineral composition

Directory of Open Access Journals (Sweden)

Fatemeh Sarjoughian

2017-02-01

Full Text Available Introduction Mineral composition is sensitive to variations in the composition of the magma and can be used to characterize the physical conditions of crystallization such as temperature, pressure, oxygen fugacity and water content. The studies have demonstrated that geobarometery by amphibole provides a tool for determining the depth of crystallization and knowledge of the depth of crystallization of hornblende through to solidification of calc-alkaline plutons (Anderson and Smith, 1995. The composition of pyroxene can be used as crystallization pressure and temperature indicators of pyroxene too. Anlytical methods The mineral compositions of the Nasrand intrusion were determined by electron microprobe, with special emphasis on the amphibole, feldspar, and pyroxene at the Naruto University, Japan, the EPMA (Jeol- JXA-8800R was used at operating conditions of 15 kV, 20 nA acceleration voltage and 20s counting time. Results The Nasrand intrusion (33°13'–33°15' N, 52°33'–52°34'E with an outcrop area of about 40 km2 is situated in the Urumieh–Dokhtar magmatic belt, SE of Ardestan. It is composed of granite and granodiorite and various dikes of diorite and gabbro which are intruded in it. It is intruded into Eocene volcanic rocks, including andesite, rhyolite, and dacite. The petrographical studies indicate that the granitic and granodioritic rocks contain major minerals such as quartz, K-feldspar, plagioclase, and amphibole, which are in an approximate equilibrium state. The gabbroic-dioritic dikes usually show microgranular porphyric texture. They mainly consist of plagioclase, amphibole, and pyroxene. The plagioclase shows variable composition from albite to oligoclase in the granitoid rocks and from oligoclase to bytownite in dioritic and gabbroic dikes (Deer et al., 1991. The amphiboles are calcic and their composition varies from hornblende to actinolite, whereas the composition of the basic dikes is inclined to hastingsite (Leake et

Aleutian tholeiitic and calc-alkaline magma series I: The mafic phenocrysts

Science.gov (United States)

Kay, S. Mahlburg; Kay, Robert W.

1985-07-01

Diagnostic mafic silicate assemblages in a continuous spectrum of Aleutian volcanic rocks provide evidence for contrasts in magmatic processes in the Aleutian arc crust. Tectonic segmentation of the arc exerts a primary control on the variable mixing, fractional crystallization and possible assimilation undergone by the magmas. End members of the continuum are termed calc-alkaline (CA) and tholeiitic (TH). CA volcanic rocks (e.g., Buldir and Moffett volcanoes) have low FeO/MgO ratios and contain compositionally diverse phenocryst populations, indicating magma mixing. Their Ni and Cr-rich magnesian olivine and clinopyroxene come from mantle-derived mafic olivine basalts that have mixed with more fractionated magmas at mid-to lower-crustal levels immediately preceding eruption. High-Al amphibole is associated with the mafic end member. In contrast, TH lavas (e.g., Okmok and Westdahl volcanoes) have high FeO/MgO ratios and contain little evidence for mixing. Evolved lavas represent advanced stages of low pressure crystallization from a basaltic magma. These lavas contain groundmass olivine (FO 40 50) and lack Ca-poor pyroxene. Aleutian volcanic rocks with intermediate FeO/MgO ratios are termed transitional tholeiitic (TTH) and calc-alkaline (TCA). TCA magmas are common (e.g., Moffett, Adagdak, Great Sitkin, and Kasatochi volcanoes) and have resulted from mixing of high-Al basalt with more evolved magmas. They contain amphibole (high and low-Al) or orthopyroxene or both and are similar to the Japanese hypersthene-series. TTH magmas (e.g., Okmok and Westdahl) contain orthopyroxene or pigeonite or both, and show some indication of upper crustal mixing. They are mineralogically similar to the Japanese pigeonite-series. High-Al basalt lacks Mg-rich mafic phases and is a derivative magma produced by high pressure fractionation of an olivine tholeiite. The low pressure mineral assemblage of high-Al basalt results from crystallization at higher crustal levels.

High-quality AlN films grown on chemical vapor-deposited graphene films

Directory of Open Access Journals (Sweden)

Chen Bin-Hao

2016-01-01

Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

High-temperature deformation behavior and mechanical properties of rapidly solidified Al-Li-Co and Al-Li-Zr alloys

International Nuclear Information System (INIS)

Sastry, S.M.L.; Oneal, J.E.

1984-01-01

The deformation behavior at 25-300 C of rapidly solidified Al-3Li-0.6Co and Al-3Li-0.3Zr alloys was studied by tensile property measurements and transmission electron microscopic examination of dislocation substructures. In binary Al-3Li and Al-3Li-Co alloys, the modulus normalized yield stress increases with an increase in temperature up to 150 C and then decreases. The yield stress at 25 C of Al-3Li-0.3Zr alloys is 180-200 MPa higher than that of Al-3Li alloys. However, the yield stress of the Zr-containing alloy decreases drastically with increasing temperatures above 75 C. The short-term yield stresses at 100-200 C of the Al-3Li-based alloys are higher than that of the conventional high-temperature Al alloys. The temperature dependences of the flow stresses of the alloys were analyzed in terms of the magnitudes and temperature dependences of the various strengthening contributions in the two alloys. The dislocation substructures at 25-300 C were correlated with mechanical properties. 19 references

Developing prospects of NiAlMn high temperature shape memory alloy

International Nuclear Information System (INIS)

Zou Min

1999-01-01

The reason and information on high temperature shape memory alloy research are introduced briefly Also, referring to some experimental reports on NiAlMn high temperature shape memory alloy, it is pointed out that ductility and memory property of this alloy can be improved by adapting proper composition and procedure to control its microstructure. Meanwhile, the engineering details must be considered when NiAlMn high temperature shape memory alloy being developed so as to resolve the problems of its practical use

Mineral chemical and petrographic occurrences os iron of the south east of Uruguay (Nico Pere z terrane)

International Nuclear Information System (INIS)

Oyhantcabal, P.; Sanchez Bettucci, L.; Siegesmund, S.; Pineyro, D.

2007-01-01

Two iron-formation deposits from S E Uruguay were petrographic ally and mineralogically investigated (including microprobe mineral chemistry). The deposit from Piedra de Gigante (ANCAP) quarry is related to tectonic slivers of a platform succession in ortho gneiss of ca. 1750 Ma. Data of detrital zircon in this platform succession point to Meso- to Neo proterozoic age.The iron deposit of Piedra del Gigante (ANCAP) quarry belongs to a succession of mica schists, quartz-muscovite schists, marbles and basic rocks. Magnetite rich layers alternate with banded rocks rich in hematite, carbonate and amphibole. Carbonate is dolomite (Mg0.7Ca1.08Mn0.05Fe0.11(CO3)2) and the amphibole is a pale green tremolite (Na0,18Ca1,68Mn0,07Mg4,16Fe+++0,2Fe++0,55Al0,03(Si7,86Al0,13)O22(OH)2). This iron deposit shows strong deformation associated with martitization of magnetite and formation of specularite rich layers where relicts of magnetite (partly martitized) are occasionally observed. Available data are not conclusive about the genesis. The low iron-content of the amphibole together with dolomite in the mineral association cast doubts on a BIF-type origin, but low contents of Al2O3, V2O3, MnO and ZnO in magnetite do not indicate an igneous origin. High oxygen fugacity during martitization in medium-T metamorphic conditions could have determined that iron rich amphiboles were not formed as is normally expected in iron-formations. In the outcrop of Cerro la Higuerita (Grupo Arroyo del Soldado; Ediacaran) a succession of metapelites (bottom), iron rich pelites and iron formations (top) is observed. The metapelites contain evidences of volcanic contribution (phenochrysts of quartz and alkali feldspar as well as shards in the matrix) suggesting a volcanic source for the iron. This iron-formation contains magnetite pheno blasts (partly martitized) and fine disseminated laths of hematite in the matrix, together with grunerite (Na0,04Ca0,17 Mn0,02Mg1,36Fe5,35Al0,07(Si7,97Al0,03)O22(OH)2

Magnetism in UPtAl under high pressure

Czech Academy of Sciences Publication Activity Database

Honda, F.; Eto, T.; Oomi, G.; Sechovský, V.; Andreev, Alexander V.; Takeshita, N.; Môri, N.

2002-01-01

Roč. 52, č. 2 (2002), s. 263-266 ISSN 0011-4626. [Czech and Slovak Conference on Magnetism /11./. Košice, 20.08.2001-23.08.2001] Institutional research plan: CEZ:AV0Z1010914 Keywords : UPtAl * high pressure * electrical resistivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.311, year: 2002

τ-MnAl with high coercivity and saturation magnetization

Directory of Open Access Journals (Sweden)

J. Z. Wei

2014-12-01

Full Text Available In this paper, high purity τ-Mn54Al46 and Mn54−xAl46Cxalloys were successfully prepared using conventional arc-melting, melt-spinning, and heat treatment process. The magnetic and the structural properties were examined using x-ray diffraction (XRD, powder neutron diffraction and magnetic measurements. A room temperature saturation magnetization of 650.5 kAm-1, coercivity of 0.5 T, and a maximum energy product of (BHmax = 24.7 kJm-3 were achieved for the pure Mn54Al46 powders without carbon doping. The carbon substituted Mn54−xAl46Cx, however, reveals a lower Curie temperature but similar saturation magnetization as compared to the carbon-free sample. The electronic structure of MnAl shows that the Mn atom possesses a magnetic moment of 2.454 μB which results from strong hybridization between Mn-Al and Mn-Mn. We also investigated the volume and c/a ratio dependence of the magnetic moments of Mn and Al. The results indicate that an increase in the intra-atomic exchange splitting due to the cell volume expansion, leads to a large magnetic moment for the Mn atom. The Mn magnetic moment can reach a value of 2.9 μB at a volume expansion rate of ΔV/V ≈ 20%.

Diffusion-induced quadrupole relaxation of 27Al nuclei in dilute Al-Ti, Al-Cr, Al-Mn, and Al-Cu alloys at high temperatures

International Nuclear Information System (INIS)

Bottyan, L.; Beke, D.L.; Tompa, K.

1983-01-01

The temperature dependence of the laboratory frame spin-lattice relaxation time of 27 Al nuclei is measured in 5N Al and in dilute Al-Ti, Al-Cr, Al-Mn, and Al-Cu alloys at 5.7 and 9.7 MHz resonance frequencies. The relaxation in pure aluminium is found to be purely due to the conduction electrons. An excess T 1 -relaxation contribution is detected in all Al-3d alloys investigated above 670 K. The excess relaxation rate is proportional to the impurity content and the temperature dependence of the excess contribution is of Arrhenius-type with an activation energy of (1.3 +- 0.3) eV for all of the investigated alloys. The relaxation contribution is found to be quadrupolar in origin and is caused by the relative diffusional jumps of solute atoms and Al atoms relatively far from the impurity. (author)

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

2014-12-15

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

Directory of Open Access Journals (Sweden)

G. Naresh-Kumar

2014-12-01

Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

Lattice stabilities, mechanical and thermodynamic properties of Al3Tm and Al3Lu intermetallics under high pressure from first-principles calculations

Science.gov (United States)

Xu-Dong, Zhang; Wei, Jiang

2016-02-01

The effects of high pressure on lattice stability, mechanical and thermodynamic properties of L12 structure Al3Tm and Al3Lu are studied by first-principles calculations within the VASP code. The phonon dispersion curves and density of phonon states are calculated by using the PHONONPY code. Our results agree well with the available experimental and theoretical values. The vibrational properties indicate that Al3Tm and Al3Lu keep their dynamical stabilities in L12 structure up to 100 GPa. The elastic properties and Debye temperatures for Al3Tm and Al3Lu increase with the increase of pressure. The mechanical anisotropic properties are discussed by using anisotropic indices AG, AU, AZ, and the three-dimensional (3D) curved surface of Young’s modulus. The calculated results show that Al3Tm and Al3Lu are both isotropic at 0 GPa and anisotropic under high pressure. In the present work, the sound velocities in different directions for Al3Tm and Al3Lu are also predicted under high pressure. We also calculate the thermodynamic properties and provide the relationships between thermal parameters and temperature/pressure. These results can provide theoretical support for further experimental work and industrial applications. Project supported by the Scientific Technology Plan of the Educational Department of Liaoning Province and Liaoning Innovative Research Team in University, China (Grant No. LT2014004) and the Program for the Young Teacher Cultivation Fund of Shenyang University of Technology, China (Grant No. 005612).

Transitions in Al Coordination during Gibbsite Crystallization Using High-Field ²⁷ Al and ²³ Na MAS NMR Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Hu, Jian Zhi [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Zhang, Xin [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Jaegers, Nicholas R. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Wan, Chuan [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Graham, Trent R. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Hu, Mary [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Pearce, Carolyn I. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Felmy, Andrew R. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Clark, Sue B. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Washington State University, Pullman, Washington 99164, United States; Rosso, Kevin M. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States

2017-11-30

Mechanisms of nucleation and growth of Al hydroxides such as gibbsite from aqueous solution, particularly in highly alkaline conditions, remain poorly understood. In this work, quantitative 27Al and 22Na MAS NMR experiments were conducted on solid samples extracted from the crystallization of gibbsite from an amorphous aluminum hydroxide gel precursor. The use of high magnetic field and fast sample spinning allowed transitional tetrahedral (AlT) and pentahedral (AlP) aluminum species to be observed along with the octahedral aluminum (AlO) that dominates the gibbsite product. Low-coordinated Al species could be detected at concentrations as low as 0.1% of the total Al sites. It is established that (a) AlT and AlP coexist on the surface of growing gibbsites even with a combined percentage over the total Al sites of less than 1%; (b) Different synthesis methods generate gibbsite with varying amounts of low-coordinated Al; (c) the amorphous gel precursor contains a significant amount of low-coordinated Al sites with AO: AlP: AlT ratios of approximately 4:2:1; (d) upon hydration, the external, low-coordinated Al sites become six-fold coordinated by interacting with the oxygen in H2O and the 27Al MAS NMR peak position shifts to that for the AlO sites; (e) gibbsite with increased long range order is synthesized over longer times by gradually incorporating residual AlP and AlT sites into octahedrally-coordinated AlO sites; (f) trace Na is predominantly a surface species on gibbsite particles. These findings provide a basis for understanding the gibbsite crystallization mechanism, along with a general means of characterizing gibbsite surface properties that are of equal importance for understanding related processes such as dissolution behavior.

Reply to `Comment on "The beginnings of hydrous mantle wedge melting" by Till et al.' by Green, Rosenthal and Kovacs

Science.gov (United States)

Till, Christy B.; Grove, Timothy L.; Withers, Anthony C.

2012-12-01

The comment of Green et al. debates the interpretation of the temperature of the H2O-saturated peridotite solidus and presence of silicate melt in the experiments of Till et al. (Contrib Mineral Petrol 163:669-688, 2012) at <1,000 °C. The criticisms presented in their comment do not invalidate any of the most compelling observations of Till et al. (Contrib Mineral Petrol 163:669-688, 2012) as discussed in the following response, including the changing minor element and Mg# composition of the solid phases with increasing temperature in our experiments with 14.5 wt% H2O at 3.2 GPa, as well as the results of our chlorite peridotite melting experiments with 0.7 wt% H2O. The point remains that Till et al. (Contrib Mineral Petrol 163:669-688, 2012) present data that call into question the H2O-saturated peridotite solidus temperature preferred by Green (Tectonophysics 13(1-4):47-71, 1972; Earth Planet Sci Lett 19(1):37-53, 1973; Can Miner 14:255-268, 1976); Millhollen et al. (J Geol 82(5):575-587, 1974); Mengel and Green (Stability of amphibole and phlogopite in metasomatized peridotite under water-saturated and water-undersaturated conditions, Geological Society of Australia Special Publication, Blackwell, pp 571-581, 1989); Wallace and Green (Mineral Petrol 44:1-19, 1991) and Green et al. (Nature 467(7314):448-451, 2010).

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

International Nuclear Information System (INIS)

Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan; Li, Cheng; Huang, Wei; Tang, Dingliang

2015-01-01

High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

Halogen effect for improving high temperature oxidation resistance of Ti-50Al by anodization

Science.gov (United States)

Mo, Min-Hua; Wu, Lian-Kui; Cao, Hua-Zhen; Lin, Jun-Pin; Zheng, Guo-Qu

2017-06-01

The high temperature oxidation resistance of Ti-50Al was significantly improved via halogen effect which was achieved by anodizing in an ethylene glycol solution containing with fluorine ion. The anodized Ti-50Al with holes and micro-cracks could be self-repaired during oxidation at 1000 °C. The thickness of the oxide scale increases with the prolonging of oxidation time. On the basis of halogen effect for improving the high temperature oxidation resistance of Ti-50Al by anodization, only fluorine addition into the electrolyte can effectively improve the high temperature oxidation resistance of Ti-50Al.

High-pressure polymorphism as a step towards high density structures of LiAlH{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Huang, Xiaoli; Duan, Defang; Li, Xin; Li, Fangfei; Huang, Yanping; Wu, Gang; Liu, Yunxian; Zhou, Qiang; Liu, Bingbing; Cui, Tian, E-mail: cuitian@jlu.edu.cn [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China)

2015-07-27

Two high density structures β- and γ-LiAlH{sub 4} are detected in LiAlH{sub 4}, a promising hydrogen storage compound, upon compression in diamond anvil cells, investigated with synchrotron X-ray diffraction and first-principle calculations. The joint of the experimental and theoretical results has confirmed the sequence of the pressure-induced structural phase transitions from α-LiAlH{sub 4} (space group P2{sub 1}/c) to β-LiAlH{sub 4} (P2{sub 1}/c-6C symmetry), and then to γ-LiAlH{sub 4} (space group Pnc2), which are not reported in previous literatures. At the α to β transition point for LiAlH{sub 4}, the estimated difference in cell volume is about 20%, while the transformation from β to γ phase is with a volume drop smaller than 1%. The α to β phase transition is accompanied by the local structure change from a AlH{sub 4} tetrahedron into a AlH{sub 6} octahedron, which contributes to a large volume collapse.

Petrographic and petrogenetic studies of adakitic magmatism of Gavdel (Shivar Dagh in Garehdagh-South Arminian Zone (Northwest of Iran (Irankuh Pb-Zn deposit, Southwest of Isfahan

Directory of Open Access Journals (Sweden)

Ahmad Jahangiri

2017-03-01

Full Text Available Gavdel intrusive body, situated in NW Iran and NE of Uromieh-Dokhtar zone, is a part of Garehdagh, South-Arminian Zone (Arasbaran. The major outcrops of intrusive include of granodiorite, monzonite accompanied with granodioritic dyke. The studied samples display granular texture with essential minerals of, plagioclase, K-feldspar, amphibole ± quartz ± clinopyroxene. Geochemically, the studied rocks characterized by SiO2 in the range of (59.1-67.8%, Al2O3 (14.09-18.3%, high Sr (507.18-1150 ppm content , high ratios of Sr/Y (32.93-83.54, La/Yb and low Y (12.05-16.13 contents, which can indicate the adakitic characters of studied rocks. These features of Gavdel intrusive display geochemical similarity with high SiO2 adakites (HAS that comprise enriched LREE, LILE and depleted HFS elements such as Ta, Nb, and Ti. The fractionated REE pattern and low HREE and Y amount can be related to the occurrence of garnet or amphibole in residual source of adakitic magmas. High content of Sr and depletion of Ta, Nb and Ti can be ascribed either to the absence of plagioclase and the presence of Fe-Ti oxides in melt residue or fractionation of titanomagnetite and amphibole minerals with respect to petrograhic indications. Subducted slab breaking off followed by its partial melting and the overlying sediments accompanied by crustal assimilation through magma rising generated the magma in the studied area and the NW of Iran.

Preparation of a high strength Al-Cu-Mg alloy by mechanical alloying and press-forming

Energy Technology Data Exchange (ETDEWEB)

Tang Huaguo [State Key Laboratory of Rare Earth Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Cheng Zhiqiang [College of Resources and Environment, Jilin Agricultural University, Changchun 130118 (China); Liu Jianwei [State Key Laboratory of Rare Earth Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Ma Xianfeng, E-mail: xfma@ciac.jl.cn [State Key Laboratory of Rare Earth Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2012-07-30

Highlights: Black-Right-Pointing-Pointer A high strength aluminum alloy of Al-2 wt.%Mg-2 wt.%Cu has been prepared by mechanical alloying and press-forming. Black-Right-Pointing-Pointer The alloy only consists of solid solution {alpha}-Al. Black-Right-Pointing-Pointer The grains size of {alpha}-Al was about 300 nm-5 {mu}m. Black-Right-Pointing-Pointer The solid solution strengthening and the grain refinement strengthening are the main reasons for such a high strength. - Abstract: A high strength aluminum alloy, with the ratio of 96 wt.%Al-2 wt.%Mg-2 wt.%Cu, has been prepared by mechanical alloying and press-forming. The alloy exhibited a high tensile strength of 780 MPa and a high microhardness of 180 HV. X-ray diffraction characterizations confirmed that the alloy only consists of a solid solution {alpha}-Al. Microstructure characterizations revealed that the grain size of {alpha}-Al was about 300 nm-5 {mu}m. The solid solution strengthening and the grain refinement strengthening were considered to be the reason for such a high strength.

Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

International Nuclear Information System (INIS)

Kalay, Yunus Eren

2008-01-01

Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T 0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T 0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 (micro)m with a Peclet number of ∼0.2, JH and TMK deviate from each other. This

Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-01-04

In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

High damping Al-Fe-Mo-Si/Zn-Al composites produced by rapidly solidified powder metallurgy process

International Nuclear Information System (INIS)

Li, P.Y.; Dai, S.L.; Chai, S.C.; Li, Y.R.

2000-01-01

The metallic materials commonly used in aircraft and aerospace fields, such as aluminum and titanium alloys, steels, etc., show extremely low damping capacity (usually of the order of or less than 10 -3 ). Thus, some problems related to vibration may emerge and influence the reliability, safety and life of airplanes, satellites, etc. It has been reported that almost two thirds of errors for rockets and satellites are related to vibration and noise. One effective way to solve these vibration-related problems is to adopt high damping metallic materials. Conventional high damping alloys exhibit damping capacity above 10 -2 , however, their densities are usually great than 5 x 10 3 kg m -3 , or their strengths are less than 200 MPa (for alloys based on dislocation damping), making them impossible to be applied to aircraft and aerospace areas. Recently, some low-density high-damping metal/metal composites based on aluminum and high damping alloys have been developed in Beijing Institute of Aeronautical Materials (BIAM) by the rapidly solidified power metallurgy process. This paper aims to report the properties of the composites based on a high temperature Al-Fe-Mo-Si alloy and a high damping Zn-Al alloy, and compare them with that of 2618-T61 alloy produced by the ingot metallurgy process

Hydration of an active shear zone: Interactions between deformation, metasomatism and magmatism - the spinel-lherzolites from the Montferrier (southern France) Oligocene basalts

International Nuclear Information System (INIS)

Cabanes, N.; Briqueu, L.

1987-01-01

Geochemical and textural investigations have been simultaneously performed on spinel-lherzolite xenoliths from the Oligo-Miocene alkali basalts of Montferrier (southern France). All the investigated samples have undergone a deformation very particular by intense shearing under high stresses (up to 1.75 kbar), low temperatures (≤900 0 C) and strain rates of about 10 -18 to 10 -15 s -1 . Mineral chemistry reveals that the Montferrier lherzolites are fragments of an undepleted relatively shallow upper mantle level located at a depth of 50 km (15 kbar). Moreover, Na and Ti enrichment in diopside would reflect a metasomatic event, also emphasized by the common occurrence of pargasite in 50-70% of the investigated samples. Crystallization of this amphibole is attributed to a hydrous infiltration which is related in time and space to the deformation. Indeed, amphibole is preferentially concentrated in strongly deformed zones and in kink-band boundaries of orthopyroxene porphyroclasts. Moreover, the grain boundaries were used by the pervasive agent to percolate into the lherzolite: significant chemical variations (increase in MgO: 15% and decrease in Al 2 O 3 : 55%) are observed within the range of 7-5 μm adjacent to the grain boundary. Finally, Sr isotopic data ( 87 Sr/ 86 Sr) demonstrate that the amphibole, i.e. the metasomatic agent, is genetically related to the host lava of the xenoliths. Thus, the hydrous silicate liquid from which the amphibole has crystallized may be an early percolation of the ascending alkali magma. (orig.)

Preparation and spectroscopic properties of Yb-doped and Yb-Al-codoped high silica glasses

International Nuclear Information System (INIS)

Qiao Yanbo; Wen Lei; Wu Botao; Ren Jinjun; Chen Danping; Qiu Jianrong

2008-01-01

Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm 2 , respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

2014-01-01

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

A Late Mesozoic short-lived shift from fluid-dominated to sediment-dominated mantle metasomatism in the northeast South China Block and its tectonic implications

Science.gov (United States)

Pan, Fa-Bin; Jin, Chong; Jia, Bao-Jian; Liu, Rong; He, Xiaobo; Gao, Zhong; Tao, Lu; Zhou, Xiao-Chun; Zhang, Li-Qi

2018-06-01

Early Cretaceous northwest (NW)-trending dolerite and amphibole lamprophyre dykes exposed in NW Zhejiang Province provide a number of new insights into the nature of the subcontinental mantle on the northeast (NE) South China Block (SCB). These dykes have a high Al2O3 (14.04-17.89 wt%) and K2O (0.66-2.69 wt%) contents but relatively low Na2O (2.48-4.61 wt%) and TiO2 (1.33-2.79 wt%) makeup alongside moderate K2O/Na2O ratios between 0.26 and 1.04. These amphibole lamprophyre dykes also have higher MgO, Cr, and Ni contents than those of comparable dolerites that have SiO2 content ranging from 46.32 to 49.87 wt%. The most striking feature of these intrusions is that they contain higher contents of Rb, Th, U, Nb, Ta, and LREE compared to their dolerite counterparts, although both amphibole lamprophyres and dolerites do exhibit similar geochemical patterns that are indicative of subduction-related origins. These features imply that an ambient peridotitic mantle that acted as the source for the amphibole lamprophyre magma source may have reacted with silicate-rich melts leading to olivine consumption while maintaining orthopyroxene. The geochemical composition of these dolerites are likely influenced to a variable extent by the fractionation of olivine, orthopyroxene, clinopyroxene, Fe-Ti oxides, and apatite, while their amphibole lamprophyre counterparts have been modified to a minor degree by amphibole fractionation. Measured Sr-Nd isotopic compositions suggest relatively constant Nd isotopic compositions (-0.36 to +1.52) with more variable Sr isotopic compositions (0.7071 to 0.7306). We hence propose that both the dolerite and amphibole lamprophyre dykes in this region are the products of mantle source metasomatism by the subducted Paleo-Pacific slab. The dolerite dykes are mainly associated with slab-derived fluids, while the lamprophyre dykes are related to both slab-derived fluids and sediment melts. Evidence in support of metasomatism comprising distinct two

Low IDL-B and high LDL-1 subfraction levels in serum of ALS patients.

Science.gov (United States)

Delaye, J B; Patin, F; Piver, E; Bruno, C; Vasse, M; Vourc'h, P; Andres, C R; Corcia, P; Blasco, H

2017-09-15

Converging evidence highlights that lipid metabolism plays a key role in ALS pathophysiology. Dyslipidemia has been described in ALS patients and may be protective but peripheral lipoprotein subclasses have never been studied. We collected sera from 30 ALS patients and 30 gender and age-matched controls. We analyzed 11 distinct lipoprotein subclasses by linear polyacrylamide gel electrophoresis (Lipoprint, Quantimetrix Corporation, USA). We also measured lipoprotein (a), apolipoprotein B, and apolipoprotein E levels. ALS patients had significant higher total cholesterol, HDL-cholesterol, and LDL-cholesterol levels than controls (pALS patients than controls. Our preliminary work confirmed the association between ALS and dyslipidemia. The low IDL-B levels may explain the hepatic steatosis frequently reported in ALS. The high levels of the cholesterol-rich LDL-1 subfraction is consistent with previously reported hypercholesterolemia. This study describes, for the first time, the distribution of serum lipoproteins in ALS patients, with low IDL-B and high LDL-1 subfraction level. Copyright © 2017 Elsevier B.V. All rights reserved.

Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

Science.gov (United States)

Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

2017-10-01

To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

Spinel and orthopyroxene exsolved from clinopyroxene in the Haladala pluton in the middle Tianshan (Xinjiang, China)

Science.gov (United States)

Zhu, Yongfeng; Chen, Jing; Xue, Yunxin; Feng, Wanyi; Jiang, Jiuyang

2017-12-01

The Haladala pluton, consisting of troctolite, olivine gabbro and gabbro with zircon SHRIMP U-Pb age of 309 ± 2 Ma (MSWD = 0.72), intruded the Devonian-Carboniferous arc segments in the middle Tianshan. Amphibole, coexisting with magnetite, amphibole, and phlogopite, crystallized in a magma chamber at depth of 20 km (6.9-7.4 kbar, 934-943 °C) based on various thermobaramoters. Two kinds of exsolution textures (spinel rods in clinopyroxene, orthopyroxene lamellae in clinopyroxene) occur in troctolite and olivine gabbro. We describe oriented spinel rods and orthopyroxene lamellae exsolved from the host clinopyroxene based on optical and high-resolution transmission electron microscope (HRTEM) observations. The spinel rods (100) are parallel to their host clinopyroxene (010). Orthopyroxene lamellae (010) are coherent and strictly parallel to their host clinopyroxene (010). Exsolution of spinel rods from the host clinopyroxene is controlled by the reaction of (Ca0.5M2+ 0.5)Fe3+[AlSiO6]in clinopyroxene → (Ca0.86-0.17M2+ 0.14-0.17)(M2 + 1.00-0.96Al0-0.04)[Al0.17-0.10Si1.83-1.90O6] + Fe3O4 + O2.

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

International Nuclear Information System (INIS)

Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

2013-01-01

AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

International Nuclear Information System (INIS)

Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

2008-01-01

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

Hydrogen selective NH{sub 2}-MIL-53(Al) MOF membranes with high permeability

Energy Technology Data Exchange (ETDEWEB)

Zhang, Feng; Zou, Xiaoqin; Gao, Xue; Fan, Songjie; Sun, Fuxing; Ren, Hao; Zhu, Guangshan [State Key Laboratory of Inorganic, Synthesis and Preparative Chemistry, Jilin University, Changchun (China)

2012-09-11

Hydrogen-based energy is a promising renewable and clean resource. Thus, hydrogen selective microporous membranes with high performance and high stability are demanded. Novel NH{sub 2}-MIL-53(Al) membranes are evaluated for hydrogen separation for this goal. Continuous NH{sub 2}-MIL-53(Al) membranes have been prepared successfully on macroporous glass frit discs assisted with colloidal seeds. The gas sorption ability of NH{sub 2}-MIL-53(Al) materials is studied by gas adsorption measurement. The isosteric heats of adsorption in a sequence of CO{sub 2}> N{sub 2}> CH{sub 4}{approx} H{sub 2} indicates different interactions between NH{sub 2}-MIL-53(Al) framework and these gases. As-prepared membranes are measured by single and binary gas permeation at different temperatures. The results of singe gas permeation show a decreasing permeance in an order of H{sub 2}> CH{sub 4}> N{sub 2}> CO{sub 2}, suggesting that the diffusion and adsorption properties make significant contributions in the gas permeation through the membrane. In binary gas permeation, the NH{sub 2}-MIL-53(Al) membrane shows high selectivity for H{sub 2} with separation factors of 20.7, 23.9 and 30.9 at room temperature (288 K) for H{sub 2} over CH{sub 4}, N{sub 2} and CO{sub 2}, respectively. In comparison to single gas permeation, a slightly higher separation factor is obtained due to the competitive adsorption effect between the gases in the porous MOF membrane. Additionally, the NH{sub 2}-MIL-53(Al) membrane exhibits very high permeance for H{sub 2} in the mixtures separation (above 1.5 x 10{sup -6} mol m{sup -2} s{sup -1} Pa{sup -1}) due to its large cavity, resulting in a very high separation power. The details of the temperature effect on the permeances of H{sub 2} over other gases are investigated from 288 to 353 K. The supported NH{sub 2}-MIL-53(Al) membranes with high hydrogen separation power possess high stability, resistance to cracking, temperature cycling and show high reproducibility

Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

Directory of Open Access Journals (Sweden)

Min-Kyeong Song

2015-01-01

Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

International Nuclear Information System (INIS)

Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Jing-Jing, Ma; Cheng, Zhu

2010-01-01

The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R Gate , channel resistance R channel , gate current I G,off at V GS = −5 and V DS = 0.1 V, and drain current I D,max at V GS = 2 and V DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Metallographic assessment of Al-12Si high-pressure die casting escalator steps.

Science.gov (United States)

Vander Voort, George Frederic; Suárez-Peña, Beatriz; Asensio-Lozano, Juan

2014-10-01

A microstructural characterization study was performed on high-pressure die cast specimens extracted from escalator steps manufactured from an Al-12 wt.% Si alloy designed for structural applications. Black and white, color light optical imaging and scanning electron microscopy techniques were used to conduct the microstructural analysis. Most regions in the samples studied contained globular-rosette primary α-Al grains surrounded by an Al-Si eutectic aggregate, while primary dendritic α-Al grains were present in the surface layer. This dendritic microstructure was observed in the regions where the melt did not impinge directly on the die surface during cavity filling. Consequently, microstructures in the surface layer were nonuniform. Utilizing physical metallurgy principles, these results were analyzed in terms of the applied pressure and filling velocity during high-pressure die casting. The effects of these parameters on solidification at different locations of the casting are discussed.

Derivation of Apollo 14 High-Al Basalts at Discrete Times: Rb-Sr Isotopic Constraints

Science.gov (United States)

Hui. Hejiu; Neal, Clive, R.; Shih, Chi-Yu; Nyquist, Laurence E.

2012-01-01

Pristine Apollo 14 (A-14) high-Al basalts represent the oldest volcanic deposits returned from the Moon [1,2] and are relatively enriched in Al2O3 (>11 wt%) compared to other mare basalts (7-11 wt%). Literature Rb-Sr isotopic data suggest there are at least three different eruption episodes for the A-14 high-Al basalts spanning the age range approx.4.3 Ga to approx.3.95 Ga [1,3]. Therefore, the high-Al basalts may record lunar mantle evolution between the formation of lunar crust (approx.4.4 Ga) and the main basin-filling mare volcanism (groups [5,6], and then regrouped into three with a possible fourth comprising 14072 based on the whole-rock incompatible trace element (ITE) ratios and Rb-Sr radiometric ages [7]. However, Rb-Sr ages of these basalts from different laboratories may not be consistent with each other because of the use of different 87Rb decay constants [8] and different isochron derivation methods over the last four decades. This study involved a literature search for Rb-Sr isotopic data previously reported for the high-Al basalts. With the re-calculated Rb-Sr radiometric ages, eruption episodes of A-14 high-Al basalts were determined, and their petrogenesis was investigated in light of the "new" Rb-Sr isotopic data and published trace element abundances of these basalts.

High Caloric Diet for ALS Patients: High Fat, High Carbohydrate or High Protein

OpenAIRE

Sarvin Sanaie; Ata Mahmoodpoor

2015-01-01

ALS is a fatal motor neurodegenerative disease characterized by muscle atrophy and weakness, dysarthria, and dysphagia. The mean survival of ALS patients is three to five years, with 50% of those diagnosed dying within three years of onset (1). A multidisciplinary approach is crucial to set an appropriate plan for metabolic and nutritional support in ALS. Nutritional management incorporates a continuous assessment and implementation of dietary modifications throughout the duration of the dise...

Low-energy mechanically milled τ-phase MnAl alloys with high coercivity and magnetization

International Nuclear Information System (INIS)

Lu, Wei; Niu, Junchao; Wang, Taolei; Xia, Kada; Xiang, Zhen; Song, Yiming; Zhang, Hong; Yoshimura, Satoru; Saito, Hitoshi

2016-01-01

The high cost of rare earth elements makes the use of high-performance permanent magnets commercially very expensive. MnAl magnetic material is one of the most promising Rare-Earth-free permanent magnets due to its obvious characteristics. However, the coercivity of MnAl alloys produced by melt spinning followed by appropriate treatment is relatively low. In this investigation, a high coercivity up to 5.3 kOe and saturation magnetization of ∼62 emu/g (with an applied magnetic field of 19.5 kOe) were obtained in the mechanically milled τ-phase Mn_5_7Al_4_3 alloy. As milling time goes on, the coercivity firstly increases and then decreases, leading to the formation of knee-point coercivity, while the saturation magnetization decreases simultaneously. The structural imperfections such as disordering and defects play the most important role in the changes of magnetic properties of τ-phase MnAl alloys processed by low-energy mechanical milling. The present results will be helpful for the development of processing protocols for the optimization of τ-phase MnAl alloys as high performance Rare-Earth-free permanent magnets. - Highlights: • Successful fabrication of pure τ-phase Mn_5_7Al_4_3 alloy by melt spinning and low-energy ball milling processes. • High coercivity (~5.3 kOe) and magnetization (~62 emu/g) were obtained in τ-phase Mn_5_7Al_4_3 alloy. • Disordering and defects play the most important role in the changes of magnetic properties.

Low-energy mechanically milled τ-phase MnAl alloys with high coercivity and magnetization

Energy Technology Data Exchange (ETDEWEB)

Lu, Wei, E-mail: weilu@tongji.edu.cn [School of Materials Science and Engineering, Shanghai Key Lab. of D& A for Metal-Functional Materials, Tongji University, Shanghai 200092 (China); Research Center for Engineering Science, Akita University, Akita 010-8502 Japan (Japan); Niu, Junchao; Wang, Taolei; Xia, Kada; Xiang, Zhen; Song, Yiming [School of Materials Science and Engineering, Shanghai Key Lab. of D& A for Metal-Functional Materials, Tongji University, Shanghai 200092 (China); Zhang, Hong; Yoshimura, Satoru; Saito, Hitoshi [Research Center for Engineering Science, Akita University, Akita 010-8502 Japan (Japan)

2016-08-05

The high cost of rare earth elements makes the use of high-performance permanent magnets commercially very expensive. MnAl magnetic material is one of the most promising Rare-Earth-free permanent magnets due to its obvious characteristics. However, the coercivity of MnAl alloys produced by melt spinning followed by appropriate treatment is relatively low. In this investigation, a high coercivity up to 5.3 kOe and saturation magnetization of ∼62 emu/g (with an applied magnetic field of 19.5 kOe) were obtained in the mechanically milled τ-phase Mn{sub 57}Al{sub 43} alloy. As milling time goes on, the coercivity firstly increases and then decreases, leading to the formation of knee-point coercivity, while the saturation magnetization decreases simultaneously. The structural imperfections such as disordering and defects play the most important role in the changes of magnetic properties of τ-phase MnAl alloys processed by low-energy mechanical milling. The present results will be helpful for the development of processing protocols for the optimization of τ-phase MnAl alloys as high performance Rare-Earth-free permanent magnets. - Highlights: • Successful fabrication of pure τ-phase Mn{sub 57}Al{sub 43} alloy by melt spinning and low-energy ball milling processes. • High coercivity (~5.3 kOe) and magnetization (~62 emu/g) were obtained in τ-phase Mn{sub 57}Al{sub 43} alloy. • Disordering and defects play the most important role in the changes of magnetic properties.

Nb-Based Nb-Al-Fe Alloys: Solidification Behavior and High-Temperature Phase Equilibria

Science.gov (United States)

Stein, Frank; Philips, Noah

2018-03-01

High-melting Nb-based alloys hold significant promise for the development of novel high-temperature materials for structural applications. In order to understand the effect of alloying elements Al and Fe, the Nb-rich part of the ternary Nb-Al-Fe system was investigated. A series of Nb-rich ternary alloys were synthesized from high-purity Nb, Al, and Fe metals by arc melting. Solidification paths were identified and the liquidus surface of the Nb corner of the ternary system was established by analysis of the as-melted microstructures and thermal analysis. Complementary analysis of heat-treated samples yielded isothermal sections at 1723 K and 1873 K (1450 °C and 1600 °C).

Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Kalay, Yunus Eren [Iowa State Univ., Ames, IA (United States)

2009-01-01

Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T₀ curves, which makes Al-Si a good candidate for solubility extension while the plunging T₀ line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of ~0.2, JH and TMK deviate from

Lithium-bearing fluor-arfvedsonite from Hurricane Mountain, New Hampshire: A crystal-chemical study

Science.gov (United States)

Hawthorne, F.C.; Oberti, R.; Ottolini, L.; Foord, E.E.

1996-01-01

The structures of two crystals of Li-bearing fluor-arfvedsonite (1) (K0.32Na0.68)Na2(Li0.48Fe 2+2.83Mn2+0.10Zn 0.06Fe3+1.46Ti0.07) (Si7.88Al0.12)O22[Fu1.15(OH) 0.85] and (2) (K0.25Na0.75)Na2(Li0.48Fe 2+2.84Mn2+0.11Zn 0.05Fe3+1.45Ti0.07)(Si 7.89Al0.11)O22[F1.35(OH) 0.65] from a granitic pegmatite, Hurricane Mountain, New Hampshire, have been refined to R indices of 1.5(1.6)% based on 1380(1387) reflections measured with MoK?? X-radiation. The unit cell parameters are (1) a 9.838(4), b 17.991(6), c 5.315(2) A??, 103.78(3)??, V 913.7 A??3 and (2) a 9.832(3), b 17.990(7), c 5.316(3) A??, ?? 103.79(3)??, V 913.2 A??3. Site-scattering refinement shows Li to be completely ordered at the M(3) site in these crystals. The amphibole composition is intermediate between fluor-arfvedsonite and fluor-ferro-leakeite with a small component (???10%) of fluor-ferro-ferri-nybo??ite. These amphibole crystals project into miarolitic cavities in a pegmatitic phase of a riebeckite granite. The early-crystallizing amphibole is close to fluor-ferro-leakeite in composition, but becomes progressively depleted in Li and F as crystals project out into miarolitic cavities; the final amphibole to crystallize is a fibrous Li-poor riebeckite. Li plays a significant role in late-stage fractionation involving the crystallization of alkali amphibole in peralkaline granitic environments.

High-rate sputter deposition of NiAl on sapphire fibers

Energy Technology Data Exchange (ETDEWEB)

Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

2002-07-01

Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

Corrosion behavior of Al-Fe-sputtering-coated steel, high chromium steels, refractory metals and ceramics in high temperature Pb-Bi

International Nuclear Information System (INIS)

Abu Khalid, Rivai; Minoru, Takahashi

2007-01-01

Corrosion tests of Al-Fe-coated steel, high chromium steels, refractory metals and ceramics were carried out in high temperature Pb-Bi at 700 C degrees. Oxygen concentrations in this experiment were 6.8*10 -7 wt.% for Al-Fe-coated steels and 5*10 -6 wt.% for high chromium steels, refractory metals and ceramics. All specimens were immersed in molten Pb-Bi in a corrosion test pot for 1.000 hours. Coating was done with using the unbalanced magnetron sputtering (UBMS) technique to protect the steel from corrosion. Sputtering targets were Al and SUS-304. Al-Fe alloy was coated on STBA26 samples. The Al-Fe alloy-coated layer could be a good protection layer on the surface of steel. The whole of the Al-Fe-coated layer still remained on the base surface of specimen. No penetration of Pb-Bi into this layer and the matrix of the specimen. For high chromium steels i.e. SUS430 and Recloy10, the oxide layer formed in the early time could not prevent the penetration of Pb-Bi into the base of the steels. Refractory metals of tungsten (W) and molybdenum (Mo) had high corrosion resistance with no penetration of Pb-Bi into their matrix. Penetration of Pb-Bi into the matrix of niobium (Nb) was observed. Ceramic materials were SiC and Ti 3 SiC 2 . The ceramic materials of SiC and Ti 3 SiC 2 had high corrosion resistance with no penetration of Pb-Bi into their matrix. (authors)

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

International Nuclear Information System (INIS)

Han Tie-Cheng; Zhao Hong-Dong; Yang Lei; Wang Yang

2017-01-01

In this work, we use a 3-nm-thick Al 0.64 In 0.36 N back-barrier layer in In 0.17 Al 0.83 N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al 0.64 In 0.36 N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al 0.64 In 0.36 N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency ( f T ) and power gain cut-off frequency ( f max ) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length. (paper)

Excessively High Vapor Pressure of Al-based Amorphous Alloys

Directory of Open Access Journals (Sweden)

Jae Im Jeong

2015-10-01

Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

Microstructural stability of heat-resistant high-pressure die-cast Mg-4Al-4Ce alloy

Energy Technology Data Exchange (ETDEWEB)

Wang, Wei; Zhang, Jinghuai; Li, Guoqiang; Feng, Yan; Su, Minliang; Wu, Ruizhi; Zhang, Zhongwu [Harbin Engineering Univ. (China). Key Laboratory of Superlight Material and Surface Technology; Jiao, Yufeng [Jiamusi Univ. (China). College of Materials Science and Engineering

2017-05-15

The thermal stability of Al-RE (rare earth) intermetallic phases with individual RE for heat-resistant high-pressure die-casting Mg-Al-RE alloys is investigated. The results of this study show that the main strengthening phase of Mg-4Al-4Ce alloy is Al{sub 11}Ce{sub 3}, whose content is about 5 wt.% according to quantitative X-ray diffraction phase analysis. The Al{sub 11}Ce{sub 3} phase appears to have high thermal stability at 200 C and 300 C, while phase morphology change with no phase structure transition could occur for Al{sub 11}Ce{sub 3} when the temperature reaches 400 C. Furthermore, besides the kinds of rare earths and temperature, stress is also an influencing factor in the microstructural stability of Mg-4Al-4Ce alloy.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Directory of Open Access Journals (Sweden)

Yan Dong

2018-04-01

Full Text Available The AlInN/GaN high-electron-mobility-transistor (HEMT indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al0.83In0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG density and a thinner barrier layer in Al0.83In0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Science.gov (United States)

Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

2018-04-24

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

Thermodynamic calculation on the stability of (Fe,Mn)3AlC carbide in high aluminum steels

International Nuclear Information System (INIS)

Chin, Kwang-Geun; Lee, Hyuk-Joong; Kwak, Jai-Hyun; Kang, Jung-Yoon; Lee, Byeong-Joo

2010-01-01

A CALPHAD type thermodynamic description for the Fe-Mn-Al-C quaternary system has been constructed by combining a newly assessed Mn-Al-C ternary description and a partly modified Fe-Al-C description to an existing thermodynamic database for steels. A special attention was paid to reproduce experimentally reported phase stability of κ carbide in high Al and high Mn steels. This paper demonstrates that the proposed thermodynamic description makes it possible to predict phase equilibria in corresponding alloys with a practically acceptable accuracy. The applicability of the thermodynamic calculation is also demonstrated for the interpretation of microstructural and constitutional evolution during industrial processes for high Al steels.

Formulation and catalytic performance of MOF-derived Fe@C/Al composites for high temperature Fischer–Tropsch synthesis

KAUST Repository

Oar-Arteta, Lide; Valero-Romero, Marí a José ; Wezendonk, Tim; Kapteijn, Freek; Gascon, Jorge

2017-01-01

High productivity towards C-2-C-4 olefins together with high catalyst stability are key for optimum operation in high temperature Fischer-Tropsch synthesis (HT-FTS). Here, we report the fabrication of Fe@C/Al composites that combine both the outstanding catalytic properties of the Fe-BTC MOF-derived Fe catalyst and the excellent mechanical resistance and textural properties provided by the inorganic AlOOH binder. The addition of AlOOH to Fe-BTC followed by pyrolysis in N-2 atmosphere at 500 degrees C results in composites with a large mesoporosity, a high Fe/Fe3O4 ratio, 10-35 nm average Fe crystallite size and coordinatively unsaturated Al3+ sites. In catalytic terms, the addition of AlOOH binder gives rise to enhanced C-2-C-4 selectivity and catalyst mechanical stability in HT-FTS, but at high Al contents the activity decreases. Altogether, the productivity of these Fe@C/Al composites is well above most known Fe catalysts for this process.

Formulation and catalytic performance of MOF-derived Fe@C/Al composites for high temperature Fischer–Tropsch synthesis

KAUST Repository

Oar-Arteta, Lide

2017-11-15

High productivity towards C-2-C-4 olefins together with high catalyst stability are key for optimum operation in high temperature Fischer-Tropsch synthesis (HT-FTS). Here, we report the fabrication of Fe@C/Al composites that combine both the outstanding catalytic properties of the Fe-BTC MOF-derived Fe catalyst and the excellent mechanical resistance and textural properties provided by the inorganic AlOOH binder. The addition of AlOOH to Fe-BTC followed by pyrolysis in N-2 atmosphere at 500 degrees C results in composites with a large mesoporosity, a high Fe/Fe3O4 ratio, 10-35 nm average Fe crystallite size and coordinatively unsaturated Al3+ sites. In catalytic terms, the addition of AlOOH binder gives rise to enhanced C-2-C-4 selectivity and catalyst mechanical stability in HT-FTS, but at high Al contents the activity decreases. Altogether, the productivity of these Fe@C/Al composites is well above most known Fe catalysts for this process.

Crystal structure and elasticity of Al-bearing phase H under high pressure

Directory of Open Access Journals (Sweden)

Guiping Liu

2018-05-01

Full Text Available Al has significant effect on properties of minerals. We reported crystal structure and elasticity of phase H, an important potential water reservoir in the mantle, which contains different Al using first principles simulations for understanding the effect of Al on the phase H. The crystal and elastic properties of Al end-member phase H (Al2O4H2 are very different from Mg end-member (MgSiO4H2 phase H and two aluminous phase H (Mg0.875Si0.875Al0.25O4H2 (12.5at%Al and Mg0.75Si0.75Al0.5O4H2 (25at% Al. However differences between Mg end-member phase H and aluminous phase H are slight except for the O-H bond length and octahedron volume. Al located at different crystal positions (original Mg or Si position of aluminous phase H has different AlO6 octahedral volumes. For three Al-bearing phase H, bulk modulus (K, shear modulus (G, compressional wave velocity (Vp and shear wave velocity (Vs increase with increasing Al content. Under high pressure, density of phase H increases with increasing Al content. The Al content affects the symmetry of the phase H and then affects the density and elastic constants of phase H. The total ground energy of phase H also increases with increasing Al content. So an energy barrier for the formation of solid solution of phase H with δ-phase AlOOH is expected. However, if the phase H with δ-phase AlOOH solid solution does exit in the mantle, it may become an important component of the mantle or leads to a low velocity layer at the mantle.

Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

Directory of Open Access Journals (Sweden)

Lin Shu

2016-09-01

Full Text Available High temperature characteristics of langasite surface acoustic wave (SAW devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2 of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices.

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

2009-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Microstructure and high-temperature oxidation resistance of TiN/Ti3Al intermetallic matrix composite coatings on Ti6Al4V alloy surface by laser cladding

Science.gov (United States)

Zhang, Xiaowei; Liu, Hongxi; Wang, Chuanqi; Zeng, Weihua; Jiang, Yehua

2010-11-01

A high-temperature oxidation resistant TiN embedded in Ti3Al intermetallic matrix composite coating was fabricated on titanium alloy Ti6Al4V surface by 6kW transverse-flow CO2 laser apparatus. The composition, morphology and microstructure of the laser clad TiN/Ti3Al intermetallic matrix composite coating were characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). In order to evaluate the high-temperature oxidation resistance of the composite coatings and the titanium alloy substrate, isothermal oxidation test was performed in a conventional high-temperature resistance furnace at 600°C and 800°C respectively. The result shows that the laser clad intermetallic composite coating has a rapidly solidified fine microstructure consisting of TiN primary phase (granular-like, flake-like, and dendrites), and uniformly distributed in the Ti3Al matrix. It indicates that a physical and chemical reaction between the Ti powder and AlN powder occurred completely under the laser irradiation. In addition, the microhardness of the TiN/Ti3Al intermetallic matrix composite coating is 844HV0.2, 3.4 times higher than that of the titanium alloy substrate. The high-temperature oxidation resistance test reveals that TiN/Ti3Al intermetallic matrix composite coating results in the better modification of high-temperature oxidation behavior than the titanium substrate. The excellent high-temperature oxidation resistance of the laser cladding layer is attributed to the formation of the reinforced phase TiN and Al2O3, TiO2 hybrid oxide. Therefore, the laser cladding TiN/Ti3Al intermetallic matrix composite coating is anticipated to be a promising oxidation resistance surface modification technique for Ti6Al4V alloy.

Microstructure degradation in high temperature fatigue of TiAl

Czech Academy of Sciences Publication Activity Database

Kruml, Tomáš; Obrtlík, Karel

2014-01-01

Roč. 65, AUG (2014), s. 28-32 ISSN 0142-1123 R&D Projects: GA ČR(CZ) GAP107/11/0704 Institutional support: RVO:68081723 Keywords : Low cycle fatigue * lamellar TiAl alloy * high temperature fatigue * dislocations Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.275, year: 2014

Microstructure and high temperature oxidation resistance of in-situ synthesized TiN/Ti_3Al intermetallic composite coatings on Ti6Al4V alloy by laser cladding process

International Nuclear Information System (INIS)

Liu, Hongxi; Zhang, Xiaowei; Jiang, Yehua; Zhou, Rong

2016-01-01

High temperature anti-oxidation TiN/Ti_3Al intermetallic composite coatings were fabricated with the powder and AlN powder on Ti6Al4V titanium alloy surface by 6 kW transverse-flow CO_2 laser apparatus. The chemical composition, morphology and microstructure of the TiN/Ti_3Al composite coatings were characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). In order to evaluate the high temperature oxidation resistance of TiN/Ti_3Al coating, the isothermal oxidation test was performed in a high temperature resistance furnace at 600 °C and 800 °C, respectively. The result shows that the composite coating has a rapidly solidified fine microstructure consisting of TiN primary phase (granular-like, flake-like or dendrites), with an even distribution in Ti_3Al matrix. It indicates that a physical and chemical reaction between Ti powder and AlN powder has completely occurred under the laser irradiation condition. In addition, the microhardness of the TiN/Ti3Al intermetallic composite coating is 3.4 times higher than that of the Ti6Al4V alloy substrate and reaches 844 HV_0_._2. The high temperature oxidation behavior test reveals that the high temperature oxidation resistance of TiN/Ti_3Al composite coating is much better than that of titanium alloy substrate. The excellent high temperature oxidation resistance of TiN/Ti_3Al intermetallic composite coating is attributed to the formation of reinforced phases TiN, Al_2O_3 and TiO_2. The laser cladding TiN/Ti_3Al intermetallic composite coating is anticipated to be a promising high temperature oxidation resistance coating for Ti6Al4V alloy. - Highlights: • In-situ TiN/Ti_3Al composite coating was synthesized on Ti6Al4V alloy by laser cladding. • The influence of Ti and AlN molar ratio on the microstructure of the coating was studied. • The TiN/Ti_3Al intermetallic coating is mainly composed of α-Ti, TiN and Ti_3Al phases. • The

Processing simulated high-level liquid waste by heat treatment with addition of TiN and AlN or Al2O3

International Nuclear Information System (INIS)

Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

1999-01-01

The present study aims to decrease the melting temperature of the oxide phase by the addition of the mixture of TiN and AlN or Al 2 O 3 for reduction of the treatment temperature of super high temperature method. The addition of the mixture of TiN and AlN or Al 2 O 3 with the atomic ratio of Al to Ti of 1:9 caused the melting of both the alloy phase and oxide phase at 1673 K. The measured values of density and hardness for thus obtained oxide phase were same as those for the oxide phase obtained at 1873 K without Al. Thus, above mentioned method is achieved at 1673 K without degradation of the properties of the oxide phase as an waste. (author)

Synthesis of high-surface-area spinel-type MgAl2O4 nanoparticles ...

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 40; Issue 1. Synthesis of high-surface-area spinel-type MgAl 2 O 4 nanoparticles by [Al(sal) 2 (H 2 O) 2 ] 2 [Mg(dipic) 2 ] and [Mg(H 2 O) 6 ][Al(ox) 2 (H 2 O) 2 ] 2 ·5H 2 O: influence of inorganic precursor type. Volume 40 Issue 1 February 2017 pp 45-53 ...

Modified high-dose melphalan and autologous SCT for AL amyloidosis or high-risk myeloma: analysis of SWOG trial S0115.

Science.gov (United States)

Sanchorawala, V; Hoering, A; Seldin, D C; Finn, K T; Fennessey, S A; Sexton, R; Mattar, B; Safah, H F; Holmberg, L A; Dean, R M; Orlowski, R Z; Barlogie, B

2013-11-01

We designed a trial using two sequential cycles of modified high-dose melphalan at 100 mg/m(2) and autologous SCT (mHDM/SCT) in AL amyloidosis (light-chain amyloidosis, AL), AL with myeloma (ALM) and host-based high-risk myeloma (hM) patients through SWOG-0115. The primary objective was to evaluate OS. From 2004 to 2010, 93 eligible patients were enrolled at 17 centers in the United States (59 with AL, 9 with ALM and 25 with hM). The median OS for patients with AL and ALM was 68 months and 47 months, respectively, and has not been reached for patients with hM. The median PFS for patients with AL and ALM was 38 months and 16 months, respectively, and has not been reached for patients with hM. The treatment-related mortality (TRM) was 12% (11/93) and was observed only in patients with AL after SCT. Grade 3 and higher non-hematologic adverse events were experienced by 81%, 67% and 57% of patients with AL, ALM and hM, respectively, during the first and second HDM/SCT. This experience demonstrates that with careful selection of patients and use of mHDM for SCT in patients with AL, ALM and hM, even in the setting of a multicenter study, OS can be improved with acceptable TRM and morbidity.

High-pressure luminescence spectroscopy of EuAl2O4 phosphor

International Nuclear Information System (INIS)

Zorenko, Yu.; Gorbenko, V.; Grinberg, M.; Turos-Matysiak, R.; Kuklinski, B.

2007-01-01

EuAl 2 O 4 powder phosphor was prepared by solid-state reaction of EuO and Al 2 O 3 oxides in vacuum. The influence of conditions of preparation on spectral lineshape of Eu 2+ emission was analyzed. It was found that the fluorescence spectra of vacuum-prepared EuAl 2 O 4 samples at 300 K present the superposition of three bands peaked at 430, 500 and 528 nm, corresponding to the 4f 6 5d 1 →4f 7 ( 8 S 7/2 ) transition of Eu 2+ ions in the different sites of EuAl 2 O 4 lattice. The luminescence of Eu 2+ centers in EuAl 2 O 4 host was also studied using the high-pressure spectroscopy up to 67 kbar. It was found that the bright green-yellow fluorescence of EuAl 2 O 4 at 300 K in the band peaked at 520-530nm range can be presented by superposition of two Gaussian sub-bands. The different pressure shifts -23 and -27cm -1 /kbar for two sub-bands were found. Such a structure of the emission spectrum was attributed to the existence of two different Eu 2+ centers in the Eu II 2+ sites of EuAl 2 O 4 lattice with higher coordination number

High temperature tribological performance of CrAlYN/CrN nanoscale multilayer coatings deposited on ?-TiAl

OpenAIRE

Walker, J.C.; Ross, I.M.; Reinhard, C.; Rainforth, W.M.; Hovsepian, P.Eh.

2009-01-01

This paper details the effect of temperature on the frictional behaviour of highly novel CrAlYN/CrN multilayer coatings, deposited by High Power Impulse Magnetron Sputtering (HIPIMS) on a Titanium Aluminide alloy used as fan blade material in the aerospace and a turbo-charger wheel in the automotive industries. The work was the first to discover the high temperature oxide 'glaze' layer formation which occurred on CrN multilayer-type coatings at higher temperatures and has received significant...

High Temperature Sliding Wear of NiAl-based Coatings Reinforced by Borides

Directory of Open Access Journals (Sweden)

Oleksandr UMANSKYI

2016-05-01

Full Text Available The development of composite materials (CM in the systems “metal-refractory compound” is one of the up-to-date trends in design of novel materials aimed at operating under the conditions of significant loads at high temperature. To design such material, NiAl, which is widely used for deposition of protective coatings on parts of gas-turbine engines, was selected for a matrix. To strengthen a NiAl under the conditions of intense wear and a broad temperature range (up to 1000 °C, it is reasonable to add refractory inclusions. Introduction of refractory borides into matrix leads to a marked increase in metal wear resistance. In order to research the behavior of the designed composites at high temperatures and to study the influence of oxides on the friction processes, the authors carried out high temperature oxidation of CM of the above systems at 1000 °С for 90 min. It was determined that all of the composites were oxidized selectively and that the thickness of oxide layers formed on the boride inclusions is 3 – 7 times that on the oxides formed on the NiAl matrix. The mechanism of wear of gas-thermal coatings of the NiAl – МеB2 systems was studied for conditions of high temperature tribotests using the «pin-on-disc» technique. The obtained results indicate that introduction of TiB2, CrB2 and ZrB2 leads to their more intense oxidation during high temperature tribotests as compared to the matrix. The oxides formed on refractory borides act as solid lubricants, which promote a decrease in wear of the contact friction pairs. For more detailed investigation of the effect of tribo-oxidation products on the friction processes, tribotests were conducted for prior oxidized (at 900 °С coatings NiAl – 15 wt.% CrB2 (TiB2, ZrB2.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.8093

Some aspects of the metal purity in high strength Al-alloys

International Nuclear Information System (INIS)

Banizs, K.; Csernay-Balint, J.; Voeroes, G.

1990-01-01

The effect of Fe and Si on the properties of some high strength age-hardenable Al-alloys was investigated. It was found that a certain quantity (> 0.15 %) of Fe is advantageous to the formation of the cell-structure in the cast ingot both in the AlCuMg and AlZnMgCu alloys. An increased Fe-content causes a finer cell-structure. A higher Fe:Si ratio results in more homogeneous cell size distribution. Higher Si-content in the alloy decreases the favourable cast parameter range and increases the inclination to cracking of large diameter (> 270 mm) ingots. The reason of the correlation found between metal purity and mechanical properties is discussed

Cumulative Retrospective Exposure Assessment (REA) as a predictor of amphibole asbestos lung burden: validation procedures and results for industrial hygiene and pathology estimates.

Science.gov (United States)

Rasmuson, James O; Roggli, Victor L; Boelter, Fred W; Rasmuson, Eric J; Redinger, Charles F

2014-01-01

A detailed evaluation of the correlation and linearity of industrial hygiene retrospective exposure assessment (REA) for cumulative asbestos exposure with asbestos lung burden analysis (LBA) has not been previously performed, but both methods are utilized for case-control and cohort studies and other applications such as setting occupational exposure limits. (a) To correlate REA with asbestos LBA for a large number of cases from varied industries and exposure scenarios; (b) to evaluate the linearity, precision, and applicability of both industrial hygiene exposure reconstruction and LBA; and (c) to demonstrate validation methods for REA. A panel of four experienced industrial hygiene raters independently estimated the cumulative asbestos exposure for 363 cases with limited exposure details in which asbestos LBA had been independently determined. LBA for asbestos bodies was performed by a pathologist by both light microscopy and scanning electron microscopy (SEM) and free asbestos fibers by SEM. Precision, reliability, correlation and linearity were evaluated via intraclass correlation, regression analysis and analysis of covariance. Plaintiff's answers to interrogatories, work history sheets, work summaries or plaintiff's discovery depositions that were obtained in court cases involving asbestos were utilized by the pathologist to provide a summarized brief asbestos exposure and work history for each of the 363 cases. Linear relationships between REA and LBA were found when adjustment was made for asbestos fiber-type exposure differences. Significant correlation between REA and LBA was found with amphibole asbestos lung burden and mixed fiber-types, but not with chrysotile. The intraclass correlation coefficients (ICC) for the precision of the industrial hygiene rater cumulative asbestos exposure estimates and the precision of repeated laboratory analysis were found to be in the excellent range. The ICC estimates were performed independent of specific asbestos

First principles study of LiAlO2: new dense monoclinic phase under high pressure

Science.gov (United States)

Liu, Guangtao; Liu, Hanyu

2018-03-01

In this work, we have systematically explored the crystal structures of LiAlO2 at high pressures using crystal structure prediction method in combination with the density functional theory calculations. Besides the reported α, β, γ, δ and ɛ-phases, here we propose a new monoclinic ζ-LiAlO2 (C2/m) structure, which becomes thermodynamically and dynamically stable above 27 GPa. It is found that the cation coordination number increases from 4 to 6 under compression. Consisting of the compact {LiO6} and {AlO6} octahedrons, the newly-discovered ζ-phase possesses a very high density. Further electronic calculations show that LiAlO2 is still an insulator up to 60 GPa, and its bandgap increases upon compression. The present study advances our understanding on the crystal structures and high-pressure phase transitions of LiAlO2 that may trigger applications in multiple areas of industry and provoke more related basic science research.

Highly Al-doped TiO2 nanoparticles produced by Ball Mill Method: structural and electronic characterization

International Nuclear Information System (INIS)

Santos, Desireé M. de los; Navas, Javier; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

2015-01-01

Highlights: • Highly Al-doped TiO 2 nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO 2 nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti 4+ ions by Al 3+ in the TiO 2 lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

Science.gov (United States)

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

KAUST Repository

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah; Shakfa, M. Khaled; Ng, Tien Khee; Ooi, Boon S.

2018-01-01

P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

KAUST Repository

Zhao, Chao

2018-05-29

P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

Science.gov (United States)

Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

2018-01-01

We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

Energy Technology Data Exchange (ETDEWEB)

Shimizu, Tetsuhide, E-mail: simizu-tetuhide@tmu.ac.jp [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan); Teranishi, Yoshikazu; Morikawa, Kazuo; Komiya, Hidetoshi; Watanabe, Tomotaro; Nagasaka, Hiroshi [Surface Finishing Technology Group, Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10, Aomi, Kohtoh-ku, 135-0064 Tokyo (Japan); Yang, Ming [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan)

2015-04-30

(Ti,Al)N films were deposited from a Ti{sub 0.33}Al{sub 0.67} alloy target with a high Al content at a substrate temperature of less than 150 °C using high power impulse magnetron sputtering (HIPIMS) plasma. The pulse duration was varied from 60 to 300 μs with a low frequency of 333 Hz to investigate the effects on the dynamic variation of the substrate temperature, microstructural grain growth and the resulting mechanical properties. The chemical composition, surface morphology and phase composition of the films were analyzed by energy dispersive spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. Mechanical properties were additionally measured by using a nanoindentation tester. A shorter pulse duration resulted in a lower rate of increase in the substrate temperature with an exponentially higher peak target current. The obtained films had a high Al content of 70–73 at.% with a mixed highly (0002) textured wurtzite phase and a secondary phase of cubic (220) grains. Even with the wurtzite phase and the relatively high Al contents of more than 70 at.%, the films exhibited a high hardness of more than 30 GPa with a relatively smooth surface of less than 2 nm root-mean-square roughness. The hardest and smoothest surfaces were obtained for pulses with an intermediate duration of 150 μs. The differences between the obtained film properties under different pulse durations are discussed on the basis of the grain growth process observed by transmission electron microscopy. The feasibility of the low-temperature synthesis of AlN rich wurtzite phase (Ti,Al)N films with superior hardness by HIPIMS plasma duration was demonstrated. - Highlights: • Low temperature synthesis of AlN rich wurtzite phase (Ti,Al)N film was demonstrated. • 1 μm-thick TiAlN film was deposited under the temperature less than 150 °C by HIPIMS. • High Al content with highly (0002) textured wurtzite phase structure was obtained. • High hardness of 35 GPa were

Thermodynamic calculation on the stability of (Fe,Mn){sub 3}AlC carbide in high aluminum steels

Energy Technology Data Exchange (ETDEWEB)

Chin, Kwang-Geun [Automotive Steel Products Research Group, POSCO Technical Research Laboratories, POSCO, Jeonnam 545-090 (Korea, Republic of); School of Materials Science and Engineering, Pusan National University, Pusan, 609-735 (Korea, Republic of); Lee, Hyuk-Joong [Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of); Kwak, Jai-Hyun [Automotive Steel Products Research Group, POSCO Technical Research Laboratories, POSCO, Jeonnam 545-090 (Korea, Republic of); Kang, Jung-Yoon [School of Materials Science and Engineering, Pusan National University, Pusan, 609-735 (Korea, Republic of); Lee, Byeong-Joo, E-mail: calphad@postech.ac.k [Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

2010-08-27

A CALPHAD type thermodynamic description for the Fe-Mn-Al-C quaternary system has been constructed by combining a newly assessed Mn-Al-C ternary description and a partly modified Fe-Al-C description to an existing thermodynamic database for steels. A special attention was paid to reproduce experimentally reported phase stability of {kappa} carbide in high Al and high Mn steels. This paper demonstrates that the proposed thermodynamic description makes it possible to predict phase equilibria in corresponding alloys with a practically acceptable accuracy. The applicability of the thermodynamic calculation is also demonstrated for the interpretation of microstructural and constitutional evolution during industrial processes for high Al steels.

Magma storage conditions of historic Plinian eruptions of Volcán de Colima, México

Science.gov (United States)

Macias, J.; Arce, J.; Sosa, G.; Gardner, J. E.; Saucedo, R.

2013-12-01

Volcán de Colima has a historical record with major explosive eruptions occurring every ~100 years (1606, 1690, 1818, and 1913) followed by intra-Plinian effusive activity. The 1818 and 1913 Plinian eruptions erupted andesitic magmas (Pl > Opx > Cpx >> Hbl + Fe-Ti oxides + Ap and rare resorbed Ol) with homogeneous bulk compositions (1913; 58.3 × 0.5 wt.% SiO2, 1818; 58.9 × 0.2 wt.% SiO2; Saucedo et al., 2010). Instead, intra-Plinian magmas are devoid of hornblende and have compositions of 59-61 wt. % in silica (Savov et al., 2008). Pre-eruptive temperatures of oxide Fe-Ti pairs in 1818 and 1913 products yielded temperatures of 830×20°C colder than intra-Plinian magmas usually >970°C (Luhr et al., 2002) depending on the mineral phase analyzed. Amphibole in 1818 and 1913 products consists of two populations: a) large xenocrysts, with plag-px-Fe-Ti oxide rims with equilibrium pressures and temperatures of 380 MPa and 950 °C (Ridolfi et al., 2010), and b) microphenocryst with equilibrium pressures and temperatures of 190-280 MPa and 870-910 °C, respectively. Some phenocrysts in the 1818 magma have a high pressure core overgrowth by a low pressure rim. In order to understand the storage conditions of Colima explosive magmas we carried out a set of hydrothermal experiments with a 1818 pumice sample. Experiments were water oversaturated and close to the oxygen fugacity of the NNO buffer. Experiments show that amphibole is stable at pressures greater than 75 MPa at 850°C, and greater than 100 MPa at 925°C. For the same range of temperature, plagioclase is stable at pressures below ~210 MPa and 100 MPa, respectively. Experimental plagioclase and experimental glass were analyzed and compared to those from the natural sample, yielding an approximate storage pressure of 210 MPa. This pressure is confirmed by the chemical equilibrium of microphenocrystic amphibole of the natural sample. Given the nearly equivalent composition of the most recent Plinain magmas is

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

International Nuclear Information System (INIS)

Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

2008-01-01

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al_3Ni_2@Al nanoparticles as a high microwave absorption material

International Nuclear Information System (INIS)

Pang, Yu; Xie, Xiubo; Li, Da; Chou, Wusheng; Liu, Tong

2017-01-01

The Al_3Ni_2@Al nanoparticles (NPs) were prepared from Ni_4_5Al_5_5 master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m"2/g and big pore volume of 0.507 cc/g. The saturation magnetization (M_S) and coercivity (H_C) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of −86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤−10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance. - Graphical abstract: The microporous Ni/NiO nanoparticles prepared by chemically dealloying Al_3Ni_2@Al NPs exhibit high microwave absorption intensity (−86.9 dB) and wide absorption bandwidth (2.6 GHz for RC≤−10 dB). - Highlights: • Microporous Ni/NiO nanoparticals were prepared by chemically dealloying method. • They possessed micropores of 0.7–1.6 nm with a surface area of 69.5 m"2/g. • They showed high microwave absorption intensity and wide absorption bandwidth. • Microwave absorption mechanism was explained by micropore and core/shell structures.

Oxidation Behavior of AlN/h-BN Nano Composites at High Temperature

International Nuclear Information System (INIS)

Jin Haiyun; Huang Yinmao; Feng Dawei; He Bo; Yang Jianfeng

2011-01-01

Both AlN/ nano h-BN composites and AlN/ micro h-BN composites were fabricated. The high temperature oxidation behaviors were investigated at 1000deg. C and 1300deg. C using a cycle-oxidation method. The results showed that there were little changes of both nano composites and monolithic AlN ceramic at temperature of 1000deg. C. And at 1300deg. C, the oxidation dynamics curve of composites could be divided into two courses: a slowly weight increase and a rapid weight decrease, but the oxidation behavior of nano composites was better than micro composites. It was due to that the uniform distribution of oxidation production (Al 18 B 4 O 33 ) surround the AlN grains in nano composites and the oxidation proceeding was retarded. The XRD analysis and SEM observations showed that there was no BN remained in the composites surface after 1300deg. C oxidation and the micropores remain due to the vaporizing of B 2 O 3 oxidized by BN.

Microstructural Investigations of Al2O3 Scale Formed on FeCrAl Steel during High Temperature Oxidation in SO2

International Nuclear Information System (INIS)

Homa, M.; Zurek, Z.; Morgiel, B.; Zieba, P.; Wojewoda, J.

2008-01-01

The results of microstructure observations of the Al 2 O 3 scale formed on a Fe-Cr-Al steel during high temperature oxidation in the SO 2 atmosphere are presented. Morphology of the scale has been studied by SEM and TEM techniques. Phase and chemical compositions have been studied by EDX and XRD techniques. The alumina oxide is a primary component of the scale. TEM observations showed that the scale was multilayer. The entire surface of the scale is covered with 'whiskers, which look like very thin platelets and have random orientation. The cross section of a sample shows, that the 'whiskers' are approximately 2 μm high, however the compact scale layer on which they reside is 0.2 μm thick. The scale layer was composed mainly of small equiaxial grains and a residual amount of small columnar grains. EDX analysis of the scale surface showed that the any sulfides were found in the formed outer and thin inner scale layer. A phase analysis of the scale formed revealed that it is composed mainly of the θ-Al 2 O 3 phase and a residual amount of α-Al 2 O 3

Net-shape forming and properties of high volume fraction SiCp/Al composites

International Nuclear Information System (INIS)

Ren Shubin; Qu Xuanhui; Guo Jia; He Xinbo; Qin Mingli; Shen Xiaoyu

2009-01-01

High performance SiCp/Al composites have been realized their net-shape forming by use of a novel process-ceramic injection molding (CIM) for the preparation of SiC preform and pressureless infiltration of aluminum alloys. The dimension precision of prepared SiCp/Al parts could reach about ±0.3%, and their properties could also better meet the requirement of electronic packaging on the materials. In this paper, the CIM process to fabricate SiC preform and the infiltration of SiC preform by Al alloys have been discussed in detail. Additionally, the properties of prepared SiCp/Al composites have also been given research and evaluation.

High-pressure x-ray diffraction of icosahedral Zr-Al-Ni-Cu-Ag quasicrystals

DEFF Research Database (Denmark)

Jiang, Jianzhong; Saksl, Karel; Rasmussen, Helge Kildahl

2001-01-01

temperature using synchrotron radiation. The icosahedral quasicrystal structure is retained up to the highest hydrostatic pressure used (approximately 28 GPa) and is reversible after decompression. The bulk modulus at zero pressure and its pressure derivative of the icosahedral Zr-Al-Ni-Cu-Ag quasicrystal......The effect of pressure on the structural stability of icosahedral Zr-Al-Ni-Cu-Ag quasicrystals forming from a Zr65Al7.5Ni10Cu7.5Ag10 metallic glass with a supercooled liquid region of 44 K has been investigated by in situ high-pressure angle-dispersive x-ray powder diffraction at ambient......-Al-Ni-Cu-Ag quasicrystals induced by pressure....

Synthesis and Characterization of High-Entropy Alloy AlFeCoNiCuCr by Laser Cladding

Directory of Open Access Journals (Sweden)

Xiaoyang Ye

2011-01-01

Full Text Available High-entropy alloys have been recently found to have novel microstructures and unique properties. In this study, a novel AlFeCoNiCuCr high-entropy alloy was prepared by laser cladding. The microstructure, chemical composition, and constituent phases of the synthesized alloy were characterized by SEM, EDS, XRD, and TEM, respectively. High-temperature hardness was also evaluated. Experimental results demonstrate that the AlFeCoNiCuCr clad layer is composed of only BCC and FCC phases. The clad layers exhibit higher hardness at higher Al atomic content. The AlFeCoNiCuCr clad layer exhibits increased hardness at temperature between 400–700°C.

Fabrication of Al2O3–20 vol.% Al nanocomposite powders using high energy milling and their sinterability

International Nuclear Information System (INIS)

Zawrah, M.F.; Abdel-kader, H.; Elbaly, N.E.

2012-01-01

Highlights: ► Al 2 O 3 /Al nanocomposite powders were prepared via high energy ball milling. After 20 h milling, the size of Al 2 O 3 –20 vol.% Al nanocomposite particles was in the range of 23–29 nm. A uniform distribution of nanosized Al reinforcement throughout the Al 2 O 3 matrix, coating the particles was successfully obtained. ► There was no any sign of phase changes during the milling. A competition between the cold welding mechanism and the fracturing mechanism were found during milling and finally the above two mechanisms reached an equilibrium. ► The highest value of relative density was obtained for the sintered bodies at 1500 °C. ► The harness of the sintered composite was decreased while the fracture toughness was improved after addition Al into alumina. -- Abstract: In this study, alumina-based matrix nanocomposite powders reinforced with Al particles were fabricated and investigated. The sinterability of the prepared nanocomposite powder at different firing temperature was also conducted. Their mechanical properties in terms of hardness and toughness were tested. Alumina and aluminum powder mixtures were milled in a planetary ball mill for various times up to 30 h in order to produce Al 2 O 3 –20% Al nanocomposite. The phase composition, morphological and microstructural changes during mechanical milling of the nanocomposite particles were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM) techniques, respectively. The crystallite size and internal strain were evaluated by XRD patterns using Scherrer methods. A uniform distribution of the Al reinforcement in the Al 2 O 3 matrix was successfully obtained after milling the powders. The results revealed that there was no any sign of phase changes during the milling. The crystal size decreased with the prolongation of milling times, while the internal strain increased. A simple model is presented to illustrate the mechanical

Microstructure evolution of Mo–Si–Al system during self-propagation high-temperature synthesis

International Nuclear Information System (INIS)

Jia, Lei; Xie, Hui; Lu, Zhen-lin; Zhang, Chao

2013-01-01

Highlights: ► Phase transformation subsequence of the reaction system was given by a sketch. ► Transformation of MoSi 2 to Mo(Si, Al) 2 phase was observed by XRD analysis. ► Variation of diffraction peaks was discussed by lattice parameters calculation. -- Abstract: The microstructure and phase constitution of Mo(Si 1−x , Al x ) 2 alloys (x = 0.03, 0.1 and 0.4) prepared by self-propagation high-temperature synthesis is first investigated using SEM, EDS and XRD analysis. Then the lattice parameters and adiabatic temperature are calculated. Based on the above experimental and calculated results, the variation mechanism of diffraction peaks and phase transformation subsequence of the Mo–MoO 3 –Si–Al powders is discussed. Results show that, when the self-propagation reaction is over, there are a homogeneous Mo–Si–Al alloy melt and a fused Al 2 O 3 with lower density at top. Subsequently, MoSi 2 or Mo(Si, Al) 2 phase nucleates and grows as a primary phase in the Mo–Si–Al alloy melts, and then Al, Si substances are generated from the intergranular residual Al–Si liquid according to Al–Si binary phase diagram. The Al increase in the starting powder mixtures leads to the Al concentration increase in the Mo–Si–Al alloy melt. Consequently, MoSi 2 is transformed to Mo(Si, Al) 2 to phase in which Si is replaced by Al atoms and Al substance in the intergranular zones increased accordingly

Microstructure and high temperature oxidation resistance of in-situ synthesized TiN/Ti{sub 3}Al intermetallic composite coatings on Ti6Al4V alloy by laser cladding process

Energy Technology Data Exchange (ETDEWEB)

Liu, Hongxi, E-mail: piiiliuhx@sina.com; Zhang, Xiaowei; Jiang, Yehua; Zhou, Rong

2016-06-15

High temperature anti-oxidation TiN/Ti{sub 3}Al intermetallic composite coatings were fabricated with the powder and AlN powder on Ti6Al4V titanium alloy surface by 6 kW transverse-flow CO{sub 2} laser apparatus. The chemical composition, morphology and microstructure of the TiN/Ti{sub 3}Al composite coatings were characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). In order to evaluate the high temperature oxidation resistance of TiN/Ti{sub 3}Al coating, the isothermal oxidation test was performed in a high temperature resistance furnace at 600 °C and 800 °C, respectively. The result shows that the composite coating has a rapidly solidified fine microstructure consisting of TiN primary phase (granular-like, flake-like or dendrites), with an even distribution in Ti{sub 3}Al matrix. It indicates that a physical and chemical reaction between Ti powder and AlN powder has completely occurred under the laser irradiation condition. In addition, the microhardness of the TiN/Ti3Al intermetallic composite coating is 3.4 times higher than that of the Ti6Al4V alloy substrate and reaches 844 HV{sub 0.2}. The high temperature oxidation behavior test reveals that the high temperature oxidation resistance of TiN/Ti{sub 3}Al composite coating is much better than that of titanium alloy substrate. The excellent high temperature oxidation resistance of TiN/Ti{sub 3}Al intermetallic composite coating is attributed to the formation of reinforced phases TiN, Al{sub 2}O{sub 3} and TiO{sub 2}. The laser cladding TiN/Ti{sub 3}Al intermetallic composite coating is anticipated to be a promising high temperature oxidation resistance coating for Ti6Al4V alloy. - Highlights: • In-situ TiN/Ti{sub 3}Al composite coating was synthesized on Ti6Al4V alloy by laser cladding. • The influence of Ti and AlN molar ratio on the microstructure of the coating was studied. • The TiN/Ti{sub 3}Al intermetallic

Study of Cu-Al-Ni-Ga as high-temperature shape memory alloys

Science.gov (United States)

Zhang, Xin; Wang, Qian; Zhao, Xu; Wang, Fang; Liu, Qingsuo

2018-03-01

The effect of Ga element on the microstructure, mechanical properties and shape memory effect of Cu-13.0Al-4.0Ni- xGa (wt%) high-temperature shape memory alloy was investigated by optical microscopy, SEM, XRD and compression test. The microstructure observation results showed that the Cu-13.0Al-4.0Ni- xGa ( x = 0.5 and 1.0) alloys displayed dual-phase morphology which consisted of 18R martensite and (Al, Ga)Cu phase, and their grain size was about several hundred microns, smaller than that of Cu-13.0Al-4.0Ni alloy. The compression test results proved that the mechanical properties of Cu-13.0Al-4.0Ni- xGa alloys were improved by addition of Ga element owing to the grain refinement and solid solution strengthening, and the compressive fracture strains were 11.5% for x = 0.5 and 14.9% for x = 1.0, respectively. When the pre-strain was 8%, the shape memory effect of 4.2 and 4.6% were obtained for Cu-13.0Al-4.0Ni-0.5 Ga and Cu-13.0Al-4.0Ni-1.0 Ga alloys after being heated to 400 °C for 1 min.

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

Segregation Behaviour of Third Generation Advanced High-Strength Mn-Al Steels

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A. Grajcar

2012-04-01

Full Text Available The paper addresses the macro- and microsegregation of alloying elements in the new-developed Mn-Al TRIP steels, which belong to the third generation of advanced high-strength steels (AHSS used in the automotive industry. The segregation behaviour both in the as-cast state and after hot forging was assessed in the macro scale by OES and by EDS measurements in different structural constituents. The structural investigations were carried out using light and scanning electron microscopy. A special attention was paid to the effect of Nb microaddition on the structure and the segregation of alloying elements. The tendency of Mn and Al to macrosegregation was found. It is difficult to remove in Nb-free steels. Microsegregation of Mn and Al between austenite and ferritic structural constituents can be removed.

Effect of high power ultrasound on mechanical properties of Al-Si alloys

Science.gov (United States)

Srivastava, N.; Gupta, R.; Chaudhari, G. P.

2018-03-01

Effect of high power ultrasonic treatment on the solidification microstructures of Al-Si alloys containing varying content of solute Si (1, 2, 3 and 5 wt %) is investigated. Large variation in microstructures is seen and refinement of primary α-Al grains is observed. It is observed that increasing the weight percentage of solute along with ultrasonic treatment resulted in finer primary phase. By increasing the solute content from 1% to 5 wt.% in Al-Si alloys, hardness increased by about 38% without and 48% with ultrasonic treatment. Tensile strength of the alloys with ultrasonic treatment is higher as compared to those without ultrasonic treated.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Science.gov (United States)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Fe-Al2O3 nanocomposites prepared by high-energy ball milling

DEFF Research Database (Denmark)

Linderoth, Søren; Pedersen, M.S.

1994-01-01

Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x(upsilon) alm......Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x...

Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Directory of Open Access Journals (Sweden)

P. Murugapandiyan

2017-12-01

Full Text Available A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The remarkable potential device features such as heavily doped source/drain region, Al2O3 passivated device surface helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns of 1.9 × 1013 cm−2, the drain current density (Ids of 2.1 A/mm, the transconductance (gm of 800 mS/mm, the breakdown voltage (VBR of 40 V, the current gain cut-off frequency (ft of 221 GHz and the power gain cut-off frequency (fmax of 290 GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high power millimeter wave applications.

The Al Effects of Co-Free and V-Containing High-Entropy Alloys

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Songqin Xia

2017-01-01

Full Text Available In this study, five-component high-entropy alloys (HEAs AlxCrFeNiV (where x denotes the molar ratio, x = 0, 0.1, 0.3, 0.5, 0.75, 1, and 1.5 were prepared using an arc-melting furnace. The effects of the addition of the Al on the crystal structures were investigated using X-ray diffraction (XRD, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Also, two non-equiatomic ratio HEAs, AlxCrFeNiV (x = 0.3, and 0.5, were systematically studied through the use of various characterization methods in the as-cast state. The Al0.3CrFeNiV alloy displayed typical duplex body-centered cubic (BCC structures, including disordered BCC (A2, and NiAl-type ordered BCC (B2 phases. Meanwhile, in regard to the Al0.5CrFeNiV alloy, this alloy was found to contain an unknown phase which was enriched in Cr and V, as well as the coherent A2/B2 phases. Both of these alloys displayed very high yield and fracture strengths. However, their compression fracture strains were approximately 10%. Also, the fracture surfaces showed mainly cleavage fracture modes.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

Science.gov (United States)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

Energy Technology Data Exchange (ETDEWEB)

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (λ = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

High-resolution Al L2,3-edge x-ray absorption near edge structure spectra of Al-containing crystals and glasses: coordination number and bonding information from edge components

International Nuclear Information System (INIS)

Weigel, C; Calas, G; Cormier, L; Galoisy, L; Henderson, G S

2008-01-01

High-resolution Al L 2,3 -edge x-ray absorption near edge structure (XANES) spectra have been measured in selected materials containing aluminium in 4-, 5- and 6-coordination. A shift of 1.5 eV is observed between the onset of [4] Al and [6] Al L 2,3 -edge XANES, in agreement with the magnitude of the shift observed at the Al K-edge. The differences in the position and shape of low-energy components of Al L 2,3 -edge XANES spectra provide a unique fingerprint of the geometry of the Al site and of the nature of Al-O chemical bond. The high resolution allows the calculation of electronic parameters such as the spin-orbit coupling and exchange energy using intermediate coupling theory. The electron-hole exchange energy decreases in tetrahedral as compared to octahedral symmetry, in relation with the increased screening of the core hole in the former. Al L 2,3 -edge XANES spectra confirm a major structural difference between glassy and crystalline NaAlSi 2 O 6 , with Al in 4- and 6-coordination, respectively, Al coordination remaining unchanged in NaAl 1-x Fe x Si 2 O 6 glasses, as Fe is substituted for Al

MARID-type Glimmerites from Kimberley, South Africa: Metasomes or high-pressure cumulates?

Science.gov (United States)

Förster, Michael W.; Prelevic, Dejan; Buhre, Stephan; Jacob, Dorrit E.

2015-04-01

Mica- amphibole- rutile- ilmenite- diopside (MARID) xenoliths are alkali-rich, coarse-grained ultramafic rocks, typical for heavily metasomatized subcontinental lithospheric mantle (Dawson & Smith, 1977). They are produced either by interaction of mantle wall rock with lamproitic melts that percolate through the mantle (Dawson and Smith 1977; Sweeney 1993), or as direct crystallization products of those melts (Waters 1987). Two rock samples of mica-rich (>90% phlogopite) xenoliths from the Boshof Road Dump of the Bultfontein kimberlite diamond mine in Kimberley, South Africa were analyzed for major and trace elements of minerals. Millimeter sized phlogopite is the dominant mineral, making up more than 90% of the rock. Other phases are in descending order: diopside, K-richterite, rutile and ilmenite. Phlogopite is homogenous in composition and appears without zonation. They are perpotassic with K/Al between 1.1 and 1.2 at an Mg#-value of 84.5-86.5. Clinopyroxene is low in Al2O3 with values 90% phlogopite. Perpotassic phlogopites with K/Al >1 values are typical for MARID-type xenoliths by comprising low Mg# of 82-88 (Dawson 1987). We performed thermobarometric calculations on the clinopyroxenes, by using the equations of Putirka (2008). With a proposed lamproitic melt, like Waters (1987) suggested for a MARID parental magma, a pressure of 13 kbar (39 km) and a temperature of 1300 C was calculated. This depth coincides with the crustal thickness of the Kaapvaal craton (Nguuri et al. 2001). However, the pressure calculations depend on the fractionation of Al between melt and mineral and are not realistic for low-Al diopsides. Calculations by Konzett et al. (2014) yielded 4.2 GPa (155 km) by using a Ca-in-opx thermometer and a cratonic geotherm of 40 mW/m² and seem to be more realistic. By applying a sandwich experimental approach, mixing glimmerite samples with harzburgitic peridotites, we hope to achieve deeper insights into the origin of MARID-type glimmerites

Highly selective rhodamine-based fluorescence turn-on chemosensor for Al3+ ion

Science.gov (United States)

Manjunath, Rangasamy; Kannan, Palaninathan

2018-05-01

A new rhodamine-based colorimetric and fluorescent turn-on chemosensor (L) has been designed and synthesized for selective and sensitive detection of Al3+ ion. The sensing behavior toward metal ion was investigated by UV/Vis and fluorescence spectroscopy. Upon addition of Al3+ ion to solution of L provided a visual color change as well as significantly fluorescent enhancement, while other metal ions including Na+, Mg2+, K+, Mn2+, Fe3+, Ni2+, Cu2+, Zn2+, Pb2+, Cd2+ and Hg2+ ions fails to generate a distinct color and spectral changes, the distinct color change and rapid switch-on fluorescence also provide naked eye detection for Al3+ ion. The mechanism involved equilibrium between non-fluorescent spirocyclic form and highly fluorescent ring open form process was utilized and 1:2 stoichiometry for L-Al3+ complex formed with an association constant of 1.42 × 103 M-1. Moreover, chemosensor L was applied for living cell imaging and confirmed that can be used as a fluorescent probe for monitoring Al3+ ion in living cells.

Electrical resistance and magnetoresistance of UCoAl under high pressure

Czech Academy of Sciences Publication Activity Database

Honda, F.; Oomi, G.; Andreev, Alexander V.; Sechovský, V.; Shiokawa, Y.

--, - (2002), s. 126-128 ISSN 0022-3131 R&D Projects: GA ČR GP202/01/D045 Institutional research plan: CEZ:AV0Z1010914 Keywords : UCoAl * non-Fermi liquid * itinerant metamagnetism * electrical resistance * high pressure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.572, year: 2002

Microstructure/processing relationships in high-energy high-rate consolidated powder composites of Nb-stabilized Ti3Al+TiAl

Energy Technology Data Exchange (ETDEWEB)

Persad, C.; Lee, B.; Hou, C.; Eliezer, Z.; Marcus, H.L.

1989-01-01

A new approach to powder processing is employed in forming titanium aluminide composites. The processing consists of internal heating of a customized powder blend by a fast electrical discharge of a homopolar generator. The high-energy high-rate '1MJ in 1s' pulse permits rapid heating of an electrically conducting powder mixture in a cold wall die. This short time at temperature approach offers the opportunity to control phase transformations and the degree of microstructural coarsening not readily possible with standard powder-processing approaches. This paper describes the consolidation results of titanium aluminide-based powder-composite materials. The focus of this study was the definition of microstructure/processing relationships for each of the composite constituents, first as monoliths and then in composite forms. Non-equilibrium phases present in rapidly solidified TiAl powders are transformed to metastable intermediates en route to the equilibrium gamma phase.

First-principle Calculations of Mechanical Properties of Al2Cu, Al2CuMg and MgZn2 Intermetallics in High Strength Aluminum Alloys

Directory of Open Access Journals (Sweden)

LIAO Fei

2016-12-01

Full Text Available Structural stabilities, mechanical properties and electronic structures of Al2Cu, Al2CuMg and MgZn2 intermetallics in Al-Zn-Mg-Cu aluminum alloys were determined from the first-principle calculations by VASP based on the density functional theory. The results show that the cohesive energy (Ecoh decreases in the order MgZn2 > Al2CuMg > Al2Cu, whereas the formation enthalpy (ΔH decreases in the order MgZn2 > Al2Cu > Al2CuMg. Al2Cu can act as a strengthening phase for its ductile and high Young's modulus. The Al2CuMg phase exhibits elastic anisotropy and may act as a crack initiation point. MgZn2 has good plasticity and low melting point, which is the main strengthening phase in the Al-Zn-Mg-Cu aluminum alloys. Metallic bonding mode coexists with a fractional ionic interaction in Al2Cu, Al2CuMg and MgZn2, and that improves the structural stability. In order to improve the alloys' performance further, the generation of MgZn2 phase should be promoted by increasing Zn content while Mg and Cu contents are decreased properly.

Noise performance in AlGaN/GaN HEMTs under high drain bias

International Nuclear Information System (INIS)

Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

2009-01-01

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

Radiation detection with Nb/Al-AlOx/Al/Nb superconducting tunnel junctions

International Nuclear Information System (INIS)

Matsumura, Atsuki; Takahashi, Toru; Kurakado, Masahiko

1992-01-01

Superconductor radiation detectors have the possibility of 20-30 times better energy resolution than that of a high resolution Si detector. We fabricated Nb/Al-AlOx/Al/Nb superconducting tunnel junctions with low leakage current. X rays were detected with large area junctions of 178x178 μm 2 . High energy resolution of 160 eV for 5.9 keV was obtained. We also fabricated series connected junctions which covers a rather large area of 4x4 mm 2 . α particles injected into the rear substrate were detected using nonthermal phonons induced by the radiations in the substrate. (author)

Characterization of Al2O3-Co ceramic composite obtained by high energy mill

International Nuclear Information System (INIS)

Souza, J.L.; Assis, R.B. de; Carlos, E.M.; Oliveira, T.P.; Costa, F.A. da

2014-01-01

This work aims to characterize the ceramic composite Al 2 O3-Co obtained by high energy grinding. The composites were obtained by milling Al 2 O 3 and Co in a high energy mill at a speed of 400 rpm, in proportions of 5 to 20% Cobalt (Co). Ceramic composites with 5 and 20% cobalt were sintered at 1200 and 1300 ° C, with a 60-minute plateau and a heating rate of 10 ° C / min. The samples were characterized by X-ray diffraction (XRD), thermogravimetry and differential scanning calorimetry (TG / DSC) and scanning electron microscopy (SEM). The results show the significant effect of cobalt percentage and high energy grinding on the final properties of the Al 2 O 3 - Co ceramic composite, presenting satisfactory values for the composite with a 20% cobalt percentage, showing to be a promising material for application in cutting tools

Investigation of nanostructured Al-10 wt.% Zr material prepared by ball milling for high temperature applications

International Nuclear Information System (INIS)

Prosviryakov, A.S.; Shcherbachev, K.D.; Tabachkova, N.Yu.

2017-01-01

Ground chips of as-cast Al-10 wt.% Zr alloy were subjected to mechanical alloying (MA) with 5 vol.% of nanodiamond addition in a high energy planetary ball-mill. The aim of this work was to investigate the microstructure, phase transformation and mechanical properties of the material both after MA and after subsequent annealing. Optical and transmission electron microscopes were used for morphological and microstructural analysis. The effect of milling time on powder microhardness, Al lattice parameter, lattice microstrain and crystallite size was determined. It was shown that mechanical alloying of as-cast Al-10wt.%Zr alloy during 20 h leads to a complete dissolution of the primary tetragonal Al 3 Zr crystals in aluminum. At the same time, the powder microhardness increases to 370 HV. Metastable cubic Al 3 Zr phase nanoparticles precipitate from the Al solution due to its decomposition after annealing, however, the Al solid solution remains supersaturated and nanocrystalline. Compression tests at room temperature and at 300 °C showed that the strength values of the hot-pressed samples reach 822 MPa and 344 MPa, respectively. - Highlights: •As-cast Al-10 wt.% Zr alloy was mechanically alloyed with 5 vol.% nanodiamond. •The primary tetragonal Al 3 Zr crystals were completely dissolved in Al after 20 h. •Cubic Al 3 Zr phase nanoparticles precipitated from Al solution after aging. •The aged bulk material showed a high strength at room and elevated temperatures.

Investigation of nanostructured Al-10 wt.% Zr material prepared by ball milling for high temperature applications

Energy Technology Data Exchange (ETDEWEB)

Prosviryakov, A.S., E-mail: pro.alex@mail.ru; Shcherbachev, K.D.; Tabachkova, N.Yu.

2017-01-15

Ground chips of as-cast Al-10 wt.% Zr alloy were subjected to mechanical alloying (MA) with 5 vol.% of nanodiamond addition in a high energy planetary ball-mill. The aim of this work was to investigate the microstructure, phase transformation and mechanical properties of the material both after MA and after subsequent annealing. Optical and transmission electron microscopes were used for morphological and microstructural analysis. The effect of milling time on powder microhardness, Al lattice parameter, lattice microstrain and crystallite size was determined. It was shown that mechanical alloying of as-cast Al-10wt.%Zr alloy during 20 h leads to a complete dissolution of the primary tetragonal Al{sub 3}Zr crystals in aluminum. At the same time, the powder microhardness increases to 370 HV. Metastable cubic Al{sub 3}Zr phase nanoparticles precipitate from the Al solution due to its decomposition after annealing, however, the Al solid solution remains supersaturated and nanocrystalline. Compression tests at room temperature and at 300 °C showed that the strength values of the hot-pressed samples reach 822 MPa and 344 MPa, respectively. - Highlights: •As-cast Al-10 wt.% Zr alloy was mechanically alloyed with 5 vol.% nanodiamond. •The primary tetragonal Al{sub 3}Zr crystals were completely dissolved in Al after 20 h. •Cubic Al{sub 3}Zr phase nanoparticles precipitated from Al solution after aging. •The aged bulk material showed a high strength at room and elevated temperatures.

High-pressure modifications of CaZn2, SrZn2, SrAl2, and BaAl2: Implications for Laves phase structural trends

International Nuclear Information System (INIS)

Kal, Subhadeep; Stoyanov, Emil; Belieres, Jean-Philippe; Groy, Thomas L.; Norrestam, Rolf; Haeussermann, Ulrich

2008-01-01

High-pressure forms of intermetallic compounds with the composition CaZn 2 , SrZn 2 , SrAl 2 , and BaAl 2 were synthesized from CeCu 2 -type precursors (CaZn 2 , SrZn 2 , SrAl 2 ) and Ba 21 Al 40 by multi-anvil techniques and investigated by X-ray powder diffraction (SrAl 2 and BaAl 2 ), X-ray single-crystal diffraction (CaZn 2 ), and electron microscopy (SrZn 2 ). Their structures correspond to that of Laves phases. Whereas the dialuminides crystallize in the cubic MgCu 2 (C15) structure, the dizincides adopt the hexagonal MgZn 2 (C14) structure. This trend is in agreement with the structural relationship displayed by sp bonded Laves phase systems at ambient conditions. - Graphical abstract: CeCu 2 -type polar intermetallics can be transformed to Laves phases upon simultaneous application of pressure and temperature. The observed structures are controlled by the valence electron concentration

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

Science.gov (United States)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

Energy Technology Data Exchange (ETDEWEB)

Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

2015-10-15

Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

Feasibility study of Nb3Al Rutherford cable for high field accelerator magnet application

Energy Technology Data Exchange (ETDEWEB)

Yamada, R.; /Fermilab; Kikuchi, A.; /Tsukuba Magnet Lab.; Ambrosio, G.; Andreev, N.; Barzi, E.; Cooper, C.; Feher, S.; Kashikhin, V.V.; Lamm, M.; Novitski, I.; /Fermilab; Takeuchi, T.; /Tsukuba Magnet Lab.; Tartaglia, M.; Turrioni, D.; /Fermilab; Verweij, A.P.; /CERN; Wake, M.; Willering, G; /Tsukuba Magnet Lab.; Zlobin, A.V.; /Fermilab

2006-08-01

Feasibility study of Cu stabilized Nb{sub 3}Al strand and Rutherford cable for the application to high field accelerator magnets are being done at Fermilab in collaboration with NIMS. The Nb{sub 3}Al strand, which was developed and manufactured at NIMS in Japan, has a non-copper Jc of about 844 A/mm{sup 2} at 15 Tesla at 4.2 K, a copper content of 50%, and filament size of about 50 microns. Rutherford cables with 27 Nb{sub 3}Al strands of 1.03 mm diameter were fabricated and tested. Quench tests on a short cable were done to study its stability with only its self field, utilizing a high current transformer. A pair of 2 meter long Nb{sub 3}Al cables was tested extensively at CERN at 4.3 and 1.9 K up to 11 Tesla including its self field with a high transport current of 20.2 kA. In the low field test we observed instability near splices and in the central region. This is related to the flux-jump like behavior, because of excessive amount of Nb in the Nb{sub 3}Al strand. There is possibility that the Nb in Nb{sub 3}Al can cause instability below 2 Tesla field regions. We need further investigation on this problem. Above 8 Tesla, we observed quenches near the critical surface at fast ramp rate from 1000 to 3000 A/sec, with quench velocity over 100 m/sec. A small racetrack magnet was made using a 14 m of Rutherford cable and successfully tested up to 21.8 kA, corresponding to 8.7 T.

Crystal reaming during the assembly, maturation, and waning of an eleven-million-year crustal magma cycle: thermobarometry of the Aucanquilcha Volcanic Cluster

Science.gov (United States)

Walker, Barry A.; Klemetti, Erik W.; Grunder, Anita L.; Dilles, John H.; Tepley, Frank J.; Giles, Denise

2013-04-01

Phenocryst assemblages of lavas from the long-lived Aucanquilcha Volcanic Cluster (AVC) have been probed to assess pressure and temperature conditions of pre-eruptive arc magmas. Andesite to dacite lavas of the AVC erupted throughout an 11-million-year, arc magmatic cycle in the central Andes in northern Chile. Phases targeted for thermobarometry include amphibole, plagioclase, pyroxenes, and Fe-Ti oxides. Overall, crystallization is documented over 1-7.5 kbar (~25 km) of pressure and ~680-1,110 °C of temperature. Pressure estimates range from ~1 to 5 kbar for amphiboles and from ~3 to 7.5 kbar for pyroxenes. Pyroxene temperatures are tightly clustered from ~1,000-1,100 °C, Fe-Ti oxide temperatures range from ~750-1,000 °C, and amphibole temperatures range from ~780-1,050 °C. Although slightly higher, these temperatures correspond well with previously published zircon temperatures ranging from ~670-900 °C. Two different Fe-Ti oxide thermometers (Andersen and Lindsley 1985; Ghiorso and Evans 2008) are compared and agree well. We also compare amphibole and amphibole-plagioclase thermobarometers (Ridolfi et al. 2010; Holland and Blundy 1994; Anderson and Smith 1995), the solutions from which do not agree well. In samples where we employ multiple thermometers, pyroxene temperature estimates are always highest, zircon temperature estimates are lowest, and Fe-Ti oxide and amphibole temperature estimates fall in between. Maximum Fe-Ti oxide and zircon temperatures are observed during the middle stage of AVC activity (~5-3 Ma), a time associated with increased eruption rates. Amphibole temperatures during this time are relatively restricted (~850-1,000 °C). The crystal record presented here offers a time-transgressive view of an evolving, multi-tiered subvolcanic reservoir. Some crystals in AVC lavas are likely to be true phenocrysts, but the diversity of crystallization temperatures and pressures recorded by phases in individual AVC lavas suggests erupting magma

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Science.gov (United States)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

High-strength and high-RRR Al-Ni alloy for aluminum-stabilized superconductor

CERN Document Server

Wada, K; Sakamoto, H; Yamamoto, A; Makida, Y

2000-01-01

The precipitation type aluminum alloys have excellent performance as the increasing rate in electric resistivity with additives in the precipitation state is considerably low, compared to that of the aluminum alloy with additives in the solid-solution state. It is possible to enhance the mechanical strength without remarkable degradation in residual resistivity ratio (RRR) by increasing content of selected additive elements. Nickel is the suitable additive element because it has very low solubility in aluminum and low increasing rate in electric resistivity, and furthermore, nickel and aluminum form intermetallic compounds which effectively resist the motion of dislocations. First, Al-0.1wt%Ni alloy was developed for the ATLAS thin superconducting solenoid. This alloy achieved high yield strength of 79 MPa (R.T.) and 117 MPa (4.2 K) with high RRR of 490 after cold working of 21% in area reduction. These highly balanced properties could not be achieved with previously developed solid-solution aluminum alloys. ...

Casting defects and mechanical properties of high pressure die cast Mg-Zn-Al-RE alloys

Energy Technology Data Exchange (ETDEWEB)

Xiao, Wenlong; Easton, Mark A.; Zhu, Suming; Nie, Jianfeng [CAST Cooperative Research Centre, Department of Materials Engineering Monash University, Melbourne, VIC (Australia); Dargusch, Matthew S. [School of Mechanical and Mining Engineering, University of Queensland, Brisbane, QLD (Australia); Gibson, Mark A. [CSIRO Process Science and Engineering, Melbourne, VIC (Australia); Jia, Shusheng [Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering Jilin University, Changchun (China)

2012-02-15

The die casting defects and tensile properties of high pressure die cast (HPDC) Mg-Zn-Al-RE alloys with various combinations of Zn and Al were studied. The results show that die casting defects in Mg-Zn-Al-RE alloys are affected by the percentage of Zn and Al contents. The hot tearing susceptibility (HTS) of Mg-Zn-Al-RE alloys tends to increase with increasing Zn content up to 6 wt%, while a further increase of Al and/or Zn content reduces the HTS. In tensile tests, the yield strength (YS) is generally improved by increasing Zn or Al content, whereas the tensile strength (TS) and ductility appear to depend largely on the presence of casting defects. Compared with Mg-Zn-Al alloys, the mechanical properties of the Mg-Zn-Al-RE alloy are significantly improved. The Mg-4Zn-4Al-4RE alloy is found to have few casting defects and the optimal tensile properties. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High strength and utilizable ductility of bulk ultrafine-grained Cu-Al alloys

Science.gov (United States)

An, X. H.; Han, W. Z.; Huang, C. X.; Zhang, P.; Yang, G.; Wu, S. D.; Zhang, Z. F.

2008-05-01

Lack of plasticity is the main drawback for nearly all ultrafine-grained (UFG) materials, which restricts their practical applications. Bulk UFG Cu-Al alloys have been fabricated by using equal channel angular pressing technique. Its ductility was improved to exceed the criteria for structural utility while maintaining a high strength by designing the microstructure via alloying. Factors resulting in the simultaneously enhanced strength and ductility of UFG Cu-Al alloys are the formation of deformation twins and their extensive intersections facilitating accumulation of dislocations.

High-uranium-loaded U3O8--Al fuel element development program

International Nuclear Information System (INIS)

Martin, M.M.

1978-01-01

The High-Uranium-Loaded U 3 O 8 --Al Fuel Development Program supports Argonne National Laboratory efforts to develop high-uranium-density research and test reactor fuel to accommodate use of low-uranium enrichment. The goal is to fuel most research and test reactors with uranium of less than 20% enrichment for the purpose of lowering the potential for diversion of highly-enriched material for nonpeaceful usages

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

Science.gov (United States)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

The possibility to use TiAl intermetallics for high temperature applications

International Nuclear Information System (INIS)

Molotkov, A.V.

1993-01-01

Titanium aluminide TiAl is the promising heat resisting structural material with operation temperature up to 850-900 deg C. This intermetallic compound is characterized by low density and high specific values of elasticity moduli and heat resistance properties in wide temperature range, as compared to known heat resisting titanium, iron and nickel base alloys. Test batch of pressed blades was manufactured of TiAl with the use of powder technology. Results of testing showed, that endurance strength of blades exceeded by 30% the strength, required for operation. The calculations showed, that the use of such blades in gas-turbine cagines could provide 30-40% decrease of mass of compressor blading

Fasciculations and their F-response revisited: High-density surface EMG in ALS and benign fasciculations

NARCIS (Netherlands)

Kleine, B.U.; Boekestein, W.A.; Arts, I.M.; Zwarts, M.J.; Schelhaas, H.J.; Stegeman, D.F.

2012-01-01

Objective: To compare the prevalence of fasciculation potentials (FPs) with F-responses between patients with amyotrophic lateral sclerosis (ALS) and patients with benign fasciculations. Methods: In seven patients with ALS and seven patients with benign fasciculations, high-density surface EMG was

Interfacial phenomena in the reactions of Al-B, Al-Ti-B, and Al-Zr-B alloys with KF-AlF3 and NaF-AlF3 melts

International Nuclear Information System (INIS)

Lee, M.S.; Terry, B.S.; Grieveson, P.

1993-01-01

The interfacial phenomena occurring during the contacting of liquid Al-B, Al-Ti-B, and Al-Zr-B melts with KF-AlF 3 liquid fluxes have been investigated by optical examination of quenched metal drops previously immersed in the liquid fluxes. Reactions in the Al-B/KF-AlF 3 system involve the formation of metastable AlB 12 at the metal/flux interface. At high KBF 4 levels in the flux, the AlB 12 is dispersed in the flux and also at low KBF 4 levels in the metal. Reactions in the Al-Ti-B/KF-AlF 3 system involve the formation of TiB 2 , which may be dispersed in either the metal or the flux depending upon the composition of the flux. The results obtained for the Al-Ti-B/NaF-AlF 3 and Al-Zr-B/KF-AlF 3 systems were similar to those observed for the Al-Ti-B/KF-AlF 3 system

Effect of Al content on structure and mechanical properties of the Al{sub x}CrNbTiVZr (x = 0; 0.25; 0.5; 1) high-entropy alloys

Energy Technology Data Exchange (ETDEWEB)

Yurchenko, N.Yu. [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation); Stepanov, N.D., E-mail: stepanov@bsu.edu.ru [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation); Shaysultanov, D.G. [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation); Tikhonovsky, M.A. [National Science Center “Kharkov Institute of Physics and Technology”, NAS of Ukraine, Kharkov, 61108 (Ukraine); Salishchev, G.A. [Laboratory of Bulk Nanostructured Materials, Belgorod State University, Belgorod 308015 (Russian Federation)

2016-11-15

In present study, structure and mechanical properties of the Al{sub x}CrNbTiVZr (x = 0; 0.25; 0.5; 1) high-entropy alloys after arc melting and annealing at 1200 °C for 24 h are investigated. The CrNbTiVZr alloy is composed of body centered cubic (bcc) and C15 (face centered cubic) Laves phases while the Al{sub x}CrNbTiVZr (x = 0.25; 0.5; 1) alloys consist of bcc and two C14 (hexagonal close packed) Laves phases with different chemical compositions. Thermodynamic modeling predicts existence of two phases – bcc and C15 Laves phase and broadening of single bcc phase field due to Al addition. The density of the alloys decreases with the increase of Al content. The alloys are found to be extremely brittle at room temperature and 600 °C. The alloys have high strength at temperatures of 800–1000 °C. For example, yield strength at 800 °C increases from 440 MPa for the CrNbTiVZr alloy to 1250 MPa for the AlCrNbTiVZr alloy. The experimental phase composition of the Al{sub x}CrNbTiVZr alloys is compared with predicted equilibrium phases and the factors governing the transformation of C15 to C14 Laves phases due to Al addition to the CrNbTiVZr alloy analyzed. Specific properties of the alloys are compared with other high-entropy alloys and commercial Ni-based superalloys. - Highlights: •Al{sub x}CrNbTiVZr (x = 0; 0.25; 0.5; 1) alloys are arc melted and annealed at 1200 °C. •The CrNbTiVZr alloy has bcc and C15 Laves phases. •The Al-containing alloys are composed of bcc and two C14 Laves phases. •The alloys demonstrate high specific strength at temperatures of 800 °C and 1000 °C. •The strength of the alloys increases in proportion with increase of Al content.

High mobility AlGaN/GaN devices for β"−-dosimetry

International Nuclear Information System (INIS)

Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

2016-01-01

There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β"−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β"−-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β"−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β"−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

Microstructure and texture development during high-strain torsion of NiAl

Energy Technology Data Exchange (ETDEWEB)

Kloeden, B.

2006-07-01

In this study polycrystalline NiAl has been subjected to torsion deformation. The deformation, microstructure and texture development subject to the shear strain are studied by different techniques (Electron Back-Scatter and High Energy Synchrotron Radiation). Beside the development of microstructure and texture with shear strain, the effect of an initial texture as well as the deformation temperature on the development of texture and microstructure constitute an important part of this study. Therefore, samples with three different initial textures were deformed in the temperature range T=700 K-1300 K. The shear stress-shear strain curves are characterized by a peak at low strains, which is followed by softening and a steady state at high strains. Grain refinement takes place for all samples and the average grain size decreases with temperature. For temperatures T>1000 K, discontinuous dynamic recrystallization occurs, by which new grains form by nucleation and subsequent growth. The texture is characterized by two components, {l_brace}100{r_brace}<100> (cube,C) and {l_brace}110{r_brace}<100> (Goss,G). Torsional creep of NiAl is characterized by a stress exponent, which depends on temperature and an activation energy, which is stress dependent. The Swift effect, due to which samples change their axial dimension during torsion without applied axial stress, is observed for NiAl. (orig.)

High temperature properties of the Cr-Nb-Al-N coatings with increasing Al contents

OpenAIRE

Li, W. Z.; Polcar, T.; Evaristo, M.; Cavaleiro, A.

2013-01-01

Cr-Nb-Al-N coatings with Al content from 0 to 12 at.% were deposited by d.c. reactive magnetron sputtering. The coatings were annealed in protective atmosphere at 800 and 900 °C for 1 h and exposed to air at 800, 900 and 1200 °C for different times. The chemical composition, structure, microstructure, hardness and adhesive/cohesive strength of the coatings, in as-deposited and annealed conditions, were investigated and the oxidation resistance was evaluated. As expected, the Al content increa...

Promoting a-Al2O3 layer growth upon high temperature oxidation of NiCoCrAlY alloys

NARCIS (Netherlands)

Nijdam, T.J.

2005-01-01

The turbine blades in gas turbine engines need to be protected against high temperature oxidation and corrosion with a coating system. This coating system comprises of a Ni-based superalloy substrate, a NiCoCrAlY bond coating (BC) and an insulating ceramic thermal barrier coating (TBC). Good

The Role of Surface Protection for High-Temperature Performance of TiAl Alloys

Science.gov (United States)

Schütze, Michael

2017-12-01

In the temperature range where TiAl alloys are currently being used in jet engine and automotive industries, surface reaction with the operating environment is not yet a critical issue. Surface treatment may, however, be needed in order to provide improved abrasion resistance. Development routes currently aim at a further increase in operation temperatures in gas turbines up to 800°C and higher, and in automotive applications for turbocharger rotors, even up to 1050°C. In this case, oxidation rates may reach levels where significant metal consumption of the load-bearing cross-section can occur. Another possibly even more critical issue can be high-temperature-induced oxygen and nitrogen up-take into the metal subsurface zone with subsequent massive ambient temperature embrittlement. Solutions for these problems are based on a deliberate phase change of the metal subsurface zone by diffusion treatments and by using effects such as the halogen effect to change the oxidation mechanism at high temperatures. Other topics of relevance for the use of TiAl alloys in high-temperature applications can be high-temperature abrasion resistance, thermal barrier coatings on TiAl and surface quality in additive manufacturing, in all these cases-focusing on the role of the operation environment. This paper addresses the recent developments in these areas and the requirements for future work.

Study and development of NiAl intermetallic coating on hypo-eutectoid steel using highly activated composite granules of the Ni-Al system

Energy Technology Data Exchange (ETDEWEB)

Shahzad, Aamir; Zadorozhnyy, Vladislav Yu.; Pavlov, Mikhail D.; Semenov, Dmitri V.; Kaloshkin, Sergey D. [National Univ. of Science and Technology (MISIS), Moscow (Russian Federation)

2018-01-15

NiAl intermetallic coating thickness of about 50 μm was fabricated on hypo-eutectoid steel by mechanical alloying using pre-activated Ni-Al composite granules as coating material. First, Ni and Al powders were mixed with the composition of Ni-50 at.% Al and mechanically activated in a planetary ball mill, until the composite granules of this powder mixture, having maximum activity (9 cm sec{sup -1}), were formed after 120 min of milling at 200 rpm. The composite granules were then taken out from the planetary ball mill just before the critical time, i. e. the time at which these granules synthesize and convert to an intermetallic NiAl compound. The highly activated composite granules of Ni-Al were then put into the vial of a vibratory ball mill with the substrate on top of the chamber. After mechanical alloying for 60 min in the vibratory ball mill, the composite granules were synthesized fully and heat was produced during the synthesis which helped producing a thick and strong adhesive coating of NiAl intermetallic on the steel substrate. The main advantage of this technique is that not only is time saved but also there is no need for any post mechanical alloying process such as annealing or laser treatment etc. to get homogeneous, strongly bonded intermetallic coatings. X-ray diffraction analysis clearly indicates the formation of NiAl phase. Micro-hardness of the coating and substrate was also measured. The cross-sectional microstructure of the composite granules and the final coating were studied by scanning electron microscopy.

Microporous Ni@NiO nanoparticles prepared by chemically dealloying Al{sub 3}Ni{sub 2}@Al nanoparticles as a high microwave absorption material

Energy Technology Data Exchange (ETDEWEB)

Pang, Yu; Xie, Xiubo; Li, Da [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, No.37 Xueyuan Road, Beijing 100191 (China); Chou, Wusheng [School of Mechanical Engineering and Automation, Beihang University, Beijing 100191 (China); Liu, Tong, E-mail: tongliu@buaa.edu.cn [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, No.37 Xueyuan Road, Beijing 100191 (China)

2017-03-15

The Al{sub 3}Ni{sub 2}@Al nanoparticles (NPs) were prepared from Ni{sub 45}Al{sub 55} master alloy by hydrogen plasma-metal reaction method, and were subsequently dealloyed to produce porous Ni@NiO NPs of 36 nm. The pore size ranges from 0.7 to 1.6 nm, leading to large specific surface area of 69.5 m{sup 2}/g and big pore volume of 0.507 cc/g. The saturation magnetization (M{sub S}) and coercivity (H{sub C}) of the microporous Ni@NiO NPs are 11.5 emu/g and 5.2 Oe. They exhibit high microwave absorption performance with a minimum reflection coefficient (RC) of −86.9 dB and an absorption bandwidth of 2.6 GHz (RC≤−10 dB) at thickness of 4.5 mm. The enhanced microwave absorption properties are attributed to the synergistic effect of the magnetic Ni core and dielectric NiO shell, and the micropore architecture. The NPs with micropore morphology and core/shell structure open a new way to modify the microwave absorption performance. - Graphical abstract: The microporous Ni/NiO nanoparticles prepared by chemically dealloying Al{sub 3}Ni{sub 2}@Al NPs exhibit high microwave absorption intensity (−86.9 dB) and wide absorption bandwidth (2.6 GHz for RC≤−10 dB). - Highlights: • Microporous Ni/NiO nanoparticals were prepared by chemically dealloying method. • They possessed micropores of 0.7–1.6 nm with a surface area of 69.5 m{sup 2}/g. • They showed high microwave absorption intensity and wide absorption bandwidth. • Microwave absorption mechanism was explained by micropore and core/shell structures.

Defect engineering for 650 nm high-power AlGaInP laser diodes

International Nuclear Information System (INIS)

Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

2006-01-01

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

Microstructural origins of high strength and high ductility in an AlCoCrFeNi2.1 eutectic high-entropy alloy

International Nuclear Information System (INIS)

Gao, Xuzhou; Lu, Yiping; Zhang, Bo; Liang, Ningning; Wu, Guanzhong; Sha, Gang; Liu, Jizi; Zhao, Yonghao

2017-01-01

Recent studies indicate that eutectic high-entropy alloys can simultaneously possess high strength and high ductility, which have potential applications in industrial fields. Nevertheless, microstructural origins of the excellent strength–ductility combination remain unclear. In this study, an AlCoCrFeNi 2.1 eutectic high-entropy alloy was prepared with face-centered cubic (FCC)(L1 2 )/body-centered-cubic (BCC)(B2) modulated lamellar structures and a remarkable combination of ultimate tensile strength (1351 MPa) and ductility (15.4%) using the classical casting technique. Post-deformation transmission electron microscopy revealed that the FCC(L1 2 ) phase was deformed in a matter of planar dislocation slip, with a slip system of {111} <110>, and stacking faults due to low stacking fault energy. Due to extreme solute drag, high densities of dislocations are distributed homogeneously at {111} slip plane. In the BCC(B2) phase, some dislocations exist on two {110} slip bands. The atom probe tomography analysis revealed a high density of Cr-enriched nano-precipitates, which strengthened the BCC(B2) phase by Orowan mechanisms. Fracture surface observation revealed a ductile fracture in the FCC(L1 2 ) phase and a brittle-like fracture in the BCC(B2) lamella. The underlying mechanism for the high strength and high ductility of AlCoCrFeNi 2.1 eutectic high-entropy alloy was finally analyzed based on the coupling between the ductile FCC(L1 2 ) and brittle BCC(B2) phases.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

Science.gov (United States)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

High strength nanostructured Al-based alloys through optimized processing of rapidly quenched amorphous precursors.

Science.gov (United States)

Kim, Song-Yi; Lee, Gwang-Yeob; Park, Gyu-Hyeon; Kim, Hyeon-Ah; Lee, A-Young; Scudino, Sergio; Prashanth, Konda Gokuldoss; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

2018-01-18

We report the methods increasing both strength and ductility of aluminum alloys transformed from amorphous precursor. The mechanical properties of bulk samples produced by spark-plasma sintering (SPS) of amorphous Al-Ni-Co-Dy powders at temperatures above 673 K are significantly enhanced by in-situ crystallization of nano-scale intermetallic compounds during the SPS process. The spark plasma sintered Al 84 Ni 7 Co 3 Dy 6 bulk specimens exhibit 1433 MPa compressive yield strength and 1773 MPa maximum strength together with 5.6% plastic strain, respectively. The addition of Dy enhances the thermal stability of primary fcc Al in the amorphous Al-TM -RE alloy. The precipitation of intermetallic phases by crystallization of the remaining amorphous matrix plays important role to restrict the growth of the fcc Al phase and contributes to the improvement of the mechanical properties. Such fully crystalline nano- or ultrafine-scale Al-Ni-Co-Dy systems are considered promising for industrial application because their superior mechanical properties in terms of a combination of very high room temperature strength combined with good ductility.

Growth of uniform lath-like α-(Fe,Al)OOH and disc-like α-(Fe,Al)2O3 nanoparticles in a highly alkaline medium

International Nuclear Information System (INIS)

Krehula, Stjepko; Music, Svetozar

2010-01-01

The effects of aluminium (Al 3+ )-dopant on the precipitation of uniform lath-like α-FeOOH particles, the obtention and growth of α-(Fe,Al)OOH and α-(Fe,Al) 2 O 3 solid solutions, particle size and shape were investigated using X-ray powder diffraction, Moessbauer and Fourier transform infrared spectroscopies, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Acicular α-FeOOH particles, precipitated in a highly alkaline medium with the addition of tetramethylammonium hydroxide (TMAH), were used as reference material. The influence of Al-dopant was investigated by adding varying amounts of Al 3+ ions to the initial FeCl 3 solution. In the presence of lower concentrations of aluminium ions (up to 11.11 mol%) α-(Fe,Al)OOH as a single phase was formed, whereas higher concentrations led to an additional obtention and growth of α-(Fe,Al) 2 O 3 . Al-for-Fe substitution in the α-FeOOH and α-Fe 2 O 3 structures was confirmed by a decrease in the unit-cell dimensions, a decrease in the hyperfine magnetic field and an increase in the wave number of the infrared absorption bands. The presence of lower concentrations of aluminium ions (up to 11.11 mol%) in the precipitation system did not affect the size and shape of the α-(Fe,Al)OOH particles, whereas higher concentrations influenced a decrease in the length and aspect ratio. In the presence of 42.86 mol% Al 3+ ions fairly uniform disc-shaped α-(Fe,Al) 2 O 3 were formed.

High-Performance Flexible Asymmetric Supercapacitor Based on CoAl-LDH and rGO Electrodes

Science.gov (United States)

Li, Shuoshuo; Cheng, Pengpeng; Luo, Jiaxian; Zhou, Dan; Xu, Weiming; Li, Jingwei; Li, Ruchun; Yuan, Dingsheng

2017-07-01

A flexible asymmetric supercapacitor (ASC) based on a CoAl-layered double hydroxide (CoAl-LDH) electrode and a reduced graphene oxide (rGO) electrode was successfully fabricated. The CoAl-LDH electrode as a positive electrode was synthesized by directly growing CoAl-LDH nanosheet arrays on a carbon cloth (CC) through a facile hydrothermal method, and it delivered a specific capacitance of 616.9 F g-1 at a current density of 1 A g-1. The rGO electrode as a negative electrode was synthesized by coating rGO on the CC via a simple dip-coating method and revealed a specific capacitance of 110.0 F g-1 at a current density of 2 A g-1. Ultimately, the advanced ASC offered a broad voltage window (1.7 V) and exhibited a high superficial capacitance of 1.77 F cm-2 at 2 mA cm-2 and a high energy density of 0.71 mWh cm-2 at a power density of 17.05 mW cm-2, along with an excellent cycle stability (92.9% capacitance retention over 8000 charge-discharge cycles).

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

International Nuclear Information System (INIS)

Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo

2013-01-01

The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al 2 O 3 /AlGaN/GaN double heterojunction HEMTs with thin Al 2 O 3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n s , shows that TF scattering acts as the main limitation when n s exceeds 2 × 10 12 cm −2 . The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. - Highlights: • The mobility limited by thickness fluctuation (TF) scattering is studied. • Results show that thickness fluctuation scattering is the main limitation. • Two-dimensional electron gas (2DEG) mobility is a function of 2DEG density. • TF scattering is the main limitation when 2DEG density exceeds 2 × 10 12 cm −2

First results from the high-brightness x-ray spectroscopy beamline at ALS

Energy Technology Data Exchange (ETDEWEB)

Perera, R.C.C.; Ng, W.; Jones, G. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Beamline 9.3.1 at the Advanced Light Source (ALS) is a windowless beamline, covering the 1-6 keV photon-energy range, designed to achieve the goal of high brightness at the sample for use in the X-ray Atomic and Molecular Spectroscopy (XAMS) science, surface and interface science, biology and x-ray optical development programs at ALS. X-ray absorption and time of flight photo emission measurements in 2 - 5 keV photon energy in argon along with the flux, resolution, spot size and stability of the beamline will be discussed. Prospects for future XAMS measurements will also be presented.

On the Path to Optimizing the Al-Co-Cr-Cu-Fe-Ni-Ti High Entropy Alloy Family for High Temperature Applications

Directory of Open Access Journals (Sweden)

Anna M. Manzoni

2016-03-01

Full Text Available The most commonly investigated high entropy alloy, AlCoCrCuFeNi, has been chosen for optimization of its microstructural and mechanical properties by means of compositional changes and heat treatments. Among the different available optimization paths, the decrease of segregating element Cu, the increase of oxidation protective elements Al and Cr and the approach towards a γ-γ′ microstructure like in Ni-based superalloys have been probed and compared. Microscopical observations have been made for every optimization step. Vickers microhardness measurements and/or tensile/compression test have been carried out when the alloy was appropriate. Five derived alloys AlCoCrFeNi, Al23Co15Cr23Cu8Fe15Ni16, Al8Co17Cr17Cu8Fe17Ni33, Al8Co17Cr14Cu8Fe17Ni34.8Mo0.1Ti1W0.1 and Al10Co25Cr8Fe15Ni36Ti6 (all at.% have been compared to the original AlCoCrCuFeNi and the most promising one has been selected for further investigation.

Fabrication of intermetallic NiAl by self-propagating high-temperature synthesis reaction using aluminium nanopowder under high pressure

CERN Document Server

Dong Shu Shan; Cheng Hai Yong; Yang Hai Bin; Zou Guang Tian

2002-01-01

By using aluminium nanopowder prepared by wire electrical explosion, pure monophase NiAl compound with fine crystallites (<=10 mu m) and good densification (98% of the theoretical green density) was successfully fabricated by means of self-propagating high-temperature synthesis (SHS) under a high pressure of 50 MPa. Investigation shows that, due to the physical and chemical characteristics of the nanoparticles, the SHS reaction mode and mechanism are distinct from those when using conventional coarse-grained reactants. The SHS reaction process depends on the thermal conditions related to pressure and can occur at a dramatically low temperature of 308 sup o C, which cannot be expected in conventional SHS reaction. With increasing pressure, the SHS explosive ignition temperature (T sub i sub g) of forming NiAl decreases due to thermal and kinetic effects.

High Temperature AL-Nanocrystal Alloy Synthesis

National Research Council Canada - National Science Library

Perepezko, J

2001-01-01

Aluminum-rich metallic glasses containing transition metals and rare earth elements have been found to yield finely mixed microstructures of Al nanocrystals embedded in an amorphous matrix and exhibit...

Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

Energy Technology Data Exchange (ETDEWEB)

Xu, Kai, E-mail: kaixu@whut.edu.cn [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Hrma, Pavel, E-mail: pavel.hrma@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Washton, Nancy; Schweiger, Michael J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Kruger, Albert A. [U.S. Department of Energy, Office of River Protection, Richland, WA 99352 (United States)

2017-01-15

The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min{sup −1} to 700 °C was investigated with transmission electron microscopy, {sup 27}Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m{sup 2} g{sup −1}). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification. - Highlights: • Porous amorphous alumina formed in a simulated high-Al HLW melter feed during heating. • The feed had a high specific surface area at 300 °C ≤ T ≤ 500 °C. • Porous amorphous alumina induced increased specific surface area.

In-Situ Studies of Structure Transformation and Al Coordination of KAl(MoO42 during Heating by High Temperature Raman and 27Al NMR Spectroscopies

Directory of Open Access Journals (Sweden)

Min Wang

2017-03-01

Full Text Available Recent interest in optimizing composition and synthesis conditions of functional crystals, and the further exploration of new possible candidates for tunable solid-state lasers, has led to significant research on compounds in this family MIMIII(MVIO42 (MI = alkali metal, MIII = Al, In, Sc, Fe, Bi, lanthanide; MVI = Mo, W. The vibrational modes, structure transformation, and Al coordination of crystalline, glassy, and molten states of KAl(MoO42 have been investigated by in-situ high temperature Raman scattering and 27Al magic angle spinning nuclear magnetic resonance (MAS NMR spectroscopy, together with first principles density functional simulation of room temperature Raman spectrum. The results showed that, under the present fast quenching conditions, Al is present predominantly in [AlO6] octahedra in both KAl(MoO42 glass and melt, with the tetrahedrally coordinated Al being minor at approximately 2.7%. The effect of K+, from ordered arrangement in the crystal to random distribution in the melt, on the local chemical environment of Al, was also revealed. The distribution and quantitative analysis of different Al coordination subspecies are final discussed and found to be dependent on the thermal history of the glass samples.

Synthesis of high surface area spinel-type MgAl2O4 nanoparticles by

Indian Academy of Sciences (India)

68

Spinel-type magnesium aluminate, MgAl2O4, is an effective refractory ceramic for ... such as good mechanical strength at high temperatures, high resistance to ... Materials. The starting chemicals with laboratory grade purity were provided ...

Fabrication of Al-20 wt%Si powder using scrap Si by ultra high-energy milling process

Energy Technology Data Exchange (ETDEWEB)

Kang, Won-Kyung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Y Latin-Small-Letter-Dotless-I lmaz, Fikret [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tasliciftlik Campus, 60240 Tokat (Turkey); Kim, Hyo-Seob; Koo, Jar-Myung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, 275, Budae-dong, Cheonan, Chungnam 330-717 (Korea, Republic of)

2012-09-25

Highlights: Black-Right-Pointing-Pointer High energy ball milling process has been successfully employed to produce Al-20Si alloy using scrap Si powders. Black-Right-Pointing-Pointer Fully finer and homogenous structure could be achieved after 60 min of milling time. Black-Right-Pointing-Pointer Si particles were not dissolved but uniformly dispersed in the Al matrix in a milled state. Black-Right-Pointing-Pointer The hardness of as-milled Al-20Si powder increased steadily with the increase of milling time. Black-Right-Pointing-Pointer Grain size and dispersion strengthening are two mechanisms being responsible for hardness increment. - Abstract: In this study, microstructural evolution and mechanical properties of Al-20 wt%Si and pure Al powders fabricated by ultra high-energy ball milling technique were investigated as a function of milling time. The microstructure and mechanical properties of the as-milled powders were examined by scanning electron microscope (SEM), energy dispersive spectrometry (EDS), X-ray diffractometer (XRD) and Vickers hardness tester. SEM observation showed that the particle size increased at an early stage of milling, and then decreased drastically with further milling. XRD and cross-sectional EDS-mapping analyses revealed that Si particles were not dissolved but uniformly dispersed in the Al matrix in a milled state. Vickers hardness of both pure Al and Al-Si powder increases with milling time, which attributes to the grain size strengthening and dispersion strengthening.

First-principles study on the phase transition, elastic properties and electronic structure of Pt3Al alloys under high pressure

International Nuclear Information System (INIS)

Liu, Yanjun; Huang, Huawei; Pan, Yong; Zhao, Guanghui; Liang, Zheng

2014-01-01

Highlights: • The phase transition of Pt 3 Al alloys occurs at 60 GPa. • The elastic modulus of Pt 3 Al alloys increase with increasing pressure. • The cubic structure has good resistance to volume deformation under high pressure. • The pressure enhances the hybridization between Pt atom and Al atom. - Abstract: The phase transition, formation enthalpies, elastic properties and electronic structure of Pt 3 Al alloys are studied using first-principle approach. The calculated results show that the pressure leads to phase transition from tetragonal structure to cubic structure at 60 GPa. With increasing pressure, the elastic constants, bulk modulus and shear modulus of these Pt 3 Al alloys increase linearly and the bond lengths of Pt–Al metallic bonds and the peak at E F decrease. The cubic Pt 3 Al alloy has excellent resistance to volume deformation under high pressure. We suggest that the phase transition is derived from the hybridization between Pt and Al atoms for cubic structure is stronger than that of tetragonal structure and forms the strong Pt–Al metallic bonds under high pressure

Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

Science.gov (United States)

Gozu, Shin-ichiro; Mozume, Teruo

2018-05-01

InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.

Tungsten particle reinforced Al 5083 composite with high strength and ductility

Energy Technology Data Exchange (ETDEWEB)

Bauri, Ranjit, E-mail: rbauri@iitm.acin; Yadav, Devinder; Shyam Kumar, C.N.; Balaji, B.

2015-01-03

Tungsten particles were incorporated into an Al 5083 matrix by friction stir processing (FSP). FSP resulted in uniform dispersion of the tungsten particles with excellent interfacial bonding and more importantly without the formation of any harmful intermetallics. For the first time, the particles penetrated to a depth equal to the full pin length of the tool. A novel aspect of the 5083 Al–W composite is that it showed an improvement of more than 100 MPa in the UTS and at the same time exhibited a high ductility (30%). The ductility was also evident from the well defined dimples in the fracture surface which also revealed the superior bonding between the particles and the matrix. FSP also resulted in substantial grain refinement of the Al matrix. Electron backscatter diffraction (EBSD) and transmission electron microscopy analysis revealed that the fine grains formed by dynamic recrystallization. A gradual transformation from sub-grain to high-angle grain boundaries was observed from EBSD analysis pointing towards the occurrence of a continuous type of dynamic recrystallization process.

Texture development in Al-Mg alloys during high temperature annealing

International Nuclear Information System (INIS)

Saitou, T.; Inagaki, H.

2001-01-01

To clarify the effect of Mg content on annealing textures developed in Al-Mg alloys during high temperature annealing, Al-Mg alloys containing up to 9 wt.% Mg in supersaturated solid solution were cold rolled 95% and isothermally annealed at 450 C. Their textures were investigated with the orientation distribution function analysis. It was found that, in the recrystallization textures observed at complete recrystallization, addition of more than 1 wt.% Mg was sufficient to suppress the development of {100} left angle 001 right angle. With increasing Mg content, {100} left angle 001 right angle decreased remarkably, whereas {100} left angle 013 right angle and {103} left angle 321 right angle increased. Thus, {100} left angle 013 right angle and {103} left angle 321 right angle were found to be the main orientations of the recrystallization textures of Al-Mg alloys annealed at high temperatures. {100} left angle 013 right angle developed most remarkably at 4 wt.% Mg, while {103} left angle 321 right angle showed the maximum development at 7 wt.% Mg. During subsequent grain growth at 450 C, remarkable texture changes were observed only in the alloys containing Mg in the range between 2 and 4 wt.%. In these alloys, {100} left angle 013 right angle developed at the expense of {100} left angle 001 right angle at earlier stages of grain growth, whereas {103} left angle 321 right angle increased independently of these two orientations at later stages of grain growth. Reflecting these texture changes, grain growth occurred in these alloys discontinuously. Such a discontinuous grain growth with large texture changes is expected, if strong textures are already present before grain growth, and if recrystallized grains having similar orientations are distributed by forming large clusters before grain growth. (orig.)

Structure of high alumina content Al2O3-SiO2 composition glasses.

Science.gov (United States)

Weber, Richard; Sen, Sabyasachi; Youngman, Randall E; Hart, Robert T; Benmore, Chris J

2008-12-25

The structure of binary aluminosilicate glasses containing 60-67 mol % Al2O3 were investigated using high-resolution 27Al NMR and X-ray and neutron diffraction. The glasses were made by aerodynamic levitation of molten oxides. The 67% alumina composition required a cooling rate of approximately 1600 degrees C s(1-) to form glass from submillimeter sized samples. NMR results show that the glasses contain aluminum in 4-, 5-, and 6-fold coordination in the approximate ratio 4:5:1. The average Al coordination increases from 4.57 to 4.73 as the fraction of octahedral Al increases with alumina content. The diffraction results on the 67% composition are consistent with a disordered Al framework with Al ions in a range of coordination environments that are substantially different from those found in the equilibrium crystalline phases. Analysis of the neutron and X-ray structure factors yields an average bond angle of 125 +/- 4 degrees between an Al ion and the adjoining cation via a bridging oxygen. We propose that the structure of the glass is a "transition state" between the alumina-rich liquid and the equilibrium mullite phase that are dominated by 4- and 6-coordinated aluminum ions, respectively.

Mafic enclaves in dacitic domes and their relation with La Poruña scoria cone, Central Andes, northern Chile

Science.gov (United States)

González-Maurel, O. P.; Gallmeyer, G.; Godoy, B.; Menzies, A.; le Roux, P. J.; Harris, C.

2017-12-01

Chao Dacite, Chillahuita, Cerro Pabellón, Chanka, Chac-Inca, and Cerro La Torta (or Tocorpuri) are dacitic domes of late Pleistocene age (30 to 140 ka; Renzulli et al., 2006; Tierney et al., 2016) located in Northern Chilean Central Andean province (NCCA; 17°20'S - 27°40'S). While, La Poruña is a 180 m high basaltic-andesite scoria cone erupted ca. 100 ka (Wörner et al., 2000). This scoria cone is also located at the NCCA, 26 km to the SW of Chanka and 45 km to the NW of Chao Dacite. The dacitic domes are generally porphyritic and highly crystalline lavas (30 - 50 vol % phenocrysts, plagioclase > biotite > amphibole > quartz ≥ accessory), with hyalopilitic or intersertal groundmass. These domes contain mafic enclaves, mostly andesite in composition, with plagioclase > amphibole > biotite ≥ clinopyroxene ≥ olivine ≥ accessory phenocryst (10 - 20 vol %) in a lightly oxidized groundmass with intersertal or intergranular textures. In contrast, La Poruña rocks are mostly aphanitic (75 - 85 vol % groundmass) and highly vesicular, with plagioclase > olivine ≥ clinopyroxene ≥ orthopyroxene phenocrysts in an intersertal or hyalopilitic groundmass. Although petrographically different, the composition (57 wt % SiO2; 580 ppm Sr, 87Sr/86Sr = 0.7066) of mafic enclaves from Cerro Pabellón dome are similar to the lava flows and pyroclastic blocks of La Poruña scoria cone (55 - 59 wt % SiO2; 560 - 610 ppm Sr; 0.7062 - 0.7066 87Sr/86Sr). Based on this data and the eruption ages of these volcanic structures, we suggest that the mafic enclaves and La Poruña magmas are co-genetic. Thus, we propose that the genesis of these mafic enclaves is associated with the origin of less evolved parental magmas erupted in the NCCA, such as those from La Poruña. In this case, the mafic enclaves would represent batches of less evolved magmas that ascended from deeper sources and probably contributed in the eruption of the dacitic domes. Renzulli et al., 2006. In XI Congreso Geol

Tri-Lateral Noor al Salaam High Concentration Solar Central Receiver Program

Energy Technology Data Exchange (ETDEWEB)

Blackmon, James B

2008-03-31

This report documents the efforts conducted primarily under the Noor al Salaam (“Light of Peace”) program under DOE GRANT NUMBER DE-FC36-02GO12030, together with relevant technical results from a closely related technology development effort, the U.S./Israel Science and Technology Foundation (USISTF) High Concentration Solar Central Receiver program. These efforts involved preliminary design, development, and test of selected prototype power production subsystems and documentation of an initial version of the system definition for a high concentration solar hybrid/gas electrical power plant to be built in Zaafarana, Egypt as a first step in planned commercialization. A major part of the planned work was halted in 2007 with an amendment in October 2007 requiring that we complete the technical effort by December 31, 2007 and provide a final report to DOE within the following 90 days. This document summarizes the work conducted. The USISTF program was a 50/50 cost-shared program supported by the Department of Commerce through the U.S./Israel Science and Technology Commission (USISTC). The USISTC was cooperatively developed by President Clinton and the late Prime Minister Rabin of Israel "to encourage technological collaboration" and "support peace in the Middle East through economic development". The program was conducted as a follow-on effort to Israel's Magnet/CONSOLAR Program, which was an advanced development effort to design, fabricate, and test a solar central receiver and secondary optics for a "beam down" central receiver concept. The status of these hardware development programs is reviewed, since they form the basis for the Noor al Salaam program. Descriptions are provided of the integrated system and the major subsystems, including the heliostat, the high temperature air receiver, the power conversion unit, tower and tower reflector, compound parabolic concentrator, and the master control system. One objective of the USISTF program was to conduct

Conversion of nuclear waste to molten glass: Formation of porous amorphous alumina in a high-Al melter feed

Science.gov (United States)

Xu, Kai; Hrma, Pavel; Washton, Nancy; Schweiger, Michael J.; Kruger, Albert A.

2017-01-01

The transition of Al phases in a simulated high-Al high-level nuclear waste melter feed heated at 5 K min-1 to 700 °C was investigated with transmission electron microscopy, 27Al nuclear magnetic resonance spectroscopy, the Brunauer-Emmett-Teller method, and X-ray diffraction. At temperatures between 300 and 500 °C, porous amorphous alumina formed from the dehydration of gibbsite, resulting in increased specific surface area of the feed (∼8 m2 g-1). The high-surface-area amorphous alumina formed in this manner could potentially stop salt migration in the cold cap during nuclear waste vitrification.

High performance W-AlN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, Qi-Chu [School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shen, Y.G. [Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong (Hong Kong)

2004-01-25

High solar performance W-AlN cermet solar coatings were designed using a numerical computer model and deposited experimentally. In the numerical calculations aluminium oxynitride (AlON) was used as ceramic component. The dielectric function and then complex refractive index of W-AlON cermet materials were calculated using the Sheng's approximation. The layer thickness and W metal volume fraction were optimised to achieve maximum photo-thermal conversion efficiency for W-AlON cermet solar coatings on an Al reflector with a surface AlON ceramic anti-reflection layer. Optimisation calculations show that the W-AlON cermet solar coatings with two and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimised calculated AlON/W-AlON/Al solar coating film with two cermet layers has a high solar absorptance of 0.953 and a low hemispherical emittance of 0.051 at 80C for a concentration factor of 2. The AlN/W-AlN/Al solar selective coatings with two cermet layers were deposited using two metal target direct current magnetron sputtering technology. During the deposition of W-AlN cermet layer, both Al and W targets were run simultaneously in a gas mixture of argon and nitrogen. By substrate rotation a multi-sub-layer system consisting of alternating AlN ceramic and W metallic sub-layers was deposited that can be considered as a macro-homogeneous W-AlN cermet layer. A solar absorptance of 0.955 and nearly normal emittance of 0.056 at 80C have been achieved for deposited W-AlN cermet solar coatings.

Cognate xenoliths in Mt. Etna lavas: witnesses of the high-velocity body beneath the volcano

Science.gov (United States)

Corsaro, Rosa Anna; Rotolo, Silvio Giuseppe; Cocina, Ornella; Tumbarello, Gianvito

2014-01-01

Various xenoliths have been found in lavas of the 1763 ("La Montagnola"), 2001, and 2002-03 eruptions at Mt. Etna whose petrographic evidence and mineral chemistry exclude a mantle origin and clearly point to a cognate nature. Consequently, cognate xenoliths might represent a proxy to infer the nature of the high-velocity body (HVB) imaged beneath the volcano by seismic tomography. Petrography allows us to group the cognate xenoliths as follows: i) gabbros with amphibole and amphibole-bearing mela-gabbros, ii) olivine-bearing leuco-gabbros, iii) leuco-gabbros with amphibole, and iv) Plg-rich leuco gabbros. Geobarometry estimates the crystallization pressure of the cognate xenoliths between 1.9 and 4.1 kbar. The bulk density of the cognate xenoliths varies from 2.6 to 3.0 g/cm3. P wave velocities (V P ), calculated in relation to xenolith density, range from 4.9 to 6.1 km/s. The integration of mineralogical, compositional, geobarometric data, and density-dependent V P with recent literature data on 3D V P seismic tomography enabled us to formulate the first hypothesis about the nature of the HVB which, in the depth range of 3-13 km b.s.l., is likely made of intrusive gabbroic rocks. These are believed to have formed at the "solidification front", a marginal zone that encompasses a deep region (>5 km b.s.l.) of Mt. Etna's plumbing system, within which magma crystallization takes place. The intrusive rocks were afterwards fragmented and transported as cognate xenoliths by the volatile-rich and fast-ascending magmas of the 1763 "La Montagnola", 2001 and 2002-03 eruptions.

Synthesis of a highly dispersed CuO catalyst on CoAl-HT for the epoxidation of styrene.

Science.gov (United States)

Hu, Rui; Yang, Pengfei; Pan, Yongning; Li, Yunpeng; He, Yufei; Feng, Junting; Li, Dianqing

2017-10-10

A highly dispersed CuO catalyst was prepared by the deposition-precipitation method and evaluated for the catalytic epoxidation of styrene with tert-butyl hydroperoxide (TBHP) as the oxidant under solvent acetonitrile conditions. Compared with MgAl hydrotalcite (MgAl-HT)-, MgO-, TiO 2 -, C-, and MCM-22-supported catalysts, CuO/CoAl-HT exhibited preferable activity and selectivity towards styrene oxide (72% selectivity at 99.5% styrene conversion) due to its high dispersion of CuO and surface area of Cu. The improved dispersion of CuO/CoAl-HT could be ascribed to the nature of HT support, especially the synergistic effect of acidic and basic sites on the surface, which facilitated the formation of highly dispersed CuO species. A structure-performance relationship study indicated that copper(ii) in CuO was the active site for the epoxidation and oxidation of styrene, and that Cu II of rich electronic density favored the improvement of selectivity of styrene oxide. Based on these results, a reaction mechanism was proposed. Moreover, the preferred catalytic performance of CuO/CoAl-HT could be maintained in five reused cycles.

Influence of Al-W-B Recycled Composite Material on the Properties of High Performance Concrete

Directory of Open Access Journals (Sweden)

Baronins Janis

2015-12-01

Full Text Available The aim of this study is to obtain high performance boron containing material with sufficient carrying capacity with increased porosity and lower density at the same time. The influence of the different concentrations of Al-W-B powder on the properties of the fresh and hardened HPC was investigated. In the concrete mix design, the allite containing White Portland cement CEM I 52,5 R, granite stone, sand, microsilica, on polycarboxylates based super plasticizer and Al-W-B powder were used. As a source of boron composite material (CM, previously grinded powder containing boron-tungsten fiber and aluminium matrix (CM Al-W-B was used. Grinding was used for processing of CM Al-W-B powder.

Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

Directory of Open Access Journals (Sweden)

W. A. Sasangka

2016-09-01

Full Text Available Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs. We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2 at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2. Dislocation movement correlates well with high tensile stress (∼1.6 GPa at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 00 } and 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 01 } slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

Structure of spinel at high temperature using in-situ XANES study at the Al and Mg K-edge

Energy Technology Data Exchange (ETDEWEB)

Ligny, D de [Universite Claude Bernard Lyon 1, LPCML, 69622 Villeurbanne (France); Neuville, D R [Physique des Mineraux et Magmas, Geochimie-Cosmochimie, CNRS-IPGP, 4 place Jussieu, 75005 Paris (France); Flank, A-M; Lagarde, P, E-mail: deligny@pcml.univ-lyon1.f [Synchrotron SOLEIL, L' Orme des Merisiers, Saint Aubin, 91192 France (France)

2009-11-15

We present structural information obtained on spinel at high temperature (298-2400 K) using in situ XANES at the Mg and Al K-edge. Spinel, {sup [4]}(Al{sub x},Mg{sub 1-x}){sup [6]}(Al{sub 2-x},Mg{sub x})O{sub 4}, with increasing temperature, show a substitution of Mg by Al and Al by Mg in their respective sites. This substitution corresponds to an inversion of the Mg and Al sites. Furthermore, both experiments at the Al and Mg K-edges are in good agreement with XANES calculation made using FDMNES code.

High mobility AlGaN/GaN devices for β{sup −}-dosimetry

Energy Technology Data Exchange (ETDEWEB)

Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

2016-05-21

There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

Science.gov (United States)

Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

2017-02-01

Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

Role of uniform pore structure and high positive charges in the arsenate adsorption performance of Al13-modified montmorillonite

International Nuclear Information System (INIS)

Zhao, Shou; Feng, Chenghong; Huang, Xiangning; Li, Baohua; Niu, Junfeng; Shen, Zhenyao

2012-01-01

Highlights: ► Al 13 modification changes As(V) sorption mechanism of montmorillonites. ► Intercalated ion charges mainly affects As(V) adsorption kinetics. ► Uniform pore structure exhibit more excellent As(V) adsorption performance. - Abstract: Four modified montmorillonite adsorbents with varied Al 13 contents (i.e., Na-Mont, AC-Mont, PAC 20 -Mont, and Al 13 -Mont) were synthesized and characterized by N 2 adsorption/desorption, X-ray diffraction, and Fourier-transform infrared analyses. The arsenate adsorption performance of the four adsorbents were also investigated to determine the role of intercalated Al 13 , especially its high purity, high positive charge (+7), and special Keggin structure. With increased Al 13 content, the physicochemical properties (e.g., surface area, structural uniformity, basal spacing, and pore volume) and adsorption performance of the modified montmorillonites were significantly but disproportionately improved. The adsorption data well fitted the Freundlich and Redlich–Peterson isotherm model, whereas the kinetic data better correlated with the pseudo-second-order kinetic model. The arsenate sorption mechanism of the montmorillonites changed from physical to chemisorption after intercalation with Al 13 . Increasing charges of the intercalated ions enhanced the arsenate adsorption kinetics, but had minimal effect on the structural changes of the montmorillonites. The uniform pore structure formed by intercalation with high-purity Al 13 greatly enhanced the pore diffusion and adsorption rate of arsenate, resulting in the high adsorption performance of Al 13 -Mont.

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

Directory of Open Access Journals (Sweden)

Peter Kordos

2005-01-01

Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy

Directory of Open Access Journals (Sweden)

Xiao-Lu Zhou

Full Text Available A novel Si-18Mn-16Ti-11P master alloy has been developed to refine primary Si to 14.7 ± 1.3 μm, distributed uniformly in Al-27Si alloy. Comparing with traditional Cu-14P and Al-3P, Si-18Mn-16Ti-11P provided a much better refining effect, with in-situ highly active AlP. The refined Al-27Si alloy exhibited a CTE of 16.25 × 10−6/K which is slightly higher than that of Sip/Al composites fabricated by spray deposition. The UTS and elongation of refined Al-27Si alloy were increased by 106% and 235% comparing with those of unrefined alloy. It indicates that the novel Si-18Mn-16Ti-11P alloy is more suitable for high-Si Al-Si alloys and may be a candidate for refining hypereutectic Al-Si alloy for electronic packaging applications. Moreover, studies showed that TiP is the only P-containing phase in Si-18Mn-16Ti-11P master alloy. A core-shell reaction model was established to reveal mechanism of the transformation of TiP to AlP in Al-Si melts. The transformation is a liquid-solid diffusion reaction driven by chemical potential difference and the reaction rate is controlled by diffusion. It means sufficient holding time is necessary for Si-18Mn-16Ti-11P master alloy to achieve better refining effect. Keywords: Hypereutectic Al-Si alloy, Primary Si, Refinement, AlP, Thermal expansion behavior, Si-18Mn-16Ti-11P master alloy

Advances in processing of NiAl intermetallic alloys and composites for high temperature aerospace applications

Science.gov (United States)

Bochenek, Kamil; Basista, Michal

2015-11-01

Over the last few decades intermetallic compounds such as NiAl have been considered as potential high temperature structural materials for aerospace industry. A large number of investigations have been reported describing complex fabrication routes, introducing various reinforcing/alloying elements along with theoretical analyses. These research works were mainly focused on the overcoming of main disadvantage of nickel aluminides that still restricts their application range, i.e. brittleness at room temperature. In this paper we present an overview of research on NiAl processing and indicate methods that are promising in solving the low fracture toughness issue at room temperature. Other material properties relevant for high temperature applications are also addressed. The analysis is primarily done from the perspective of NiAl application in aero engines in temperature regimes from room up to the operating temperature (over 1150 °C) of turbine blades.

Highly Oriented Growth of Catalytically Active Zeolite ZSM‐5 Films with a Broad Range of Si/Al Ratios

OpenAIRE

Fu, Donglong; Schmidt, Joel E.; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M.

2017-01-01

Abstract Highly b‐oriented zeolite ZSM‐5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films. Herein, using structure‐directing agents with hydroxy groups, we demonstrate a new method to prepare highly b‐oriented zeolite ZSM‐5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞)...

A highly sensitive, single selective, fluorescent sensor for Al3+ detection and its application in living cell imaging

International Nuclear Information System (INIS)

Ye, Xing-Pei; Sun, Shao-bo; Li, Ying-dong; Zhi, Li-hua; Wu, Wei-na; Wang, Yuan

2014-01-01

A new o-aminophenol-based fluorogenic chemosensor methyl 3,5-bis((E)-(2-hydroxyphenylimino)methyl)-4-hydroxybenzoate 1 have been synthesized by Schiff base condensation of methyl 3,5-diformyl-4-hydroxybenzoate with o-aminophenol, which exhibits high selectivity and sensitivity toward Al 3+ . Fluorescence titration studies of receptors 1 with different metal cations in CH 3 OH medium showed highly selective and sensitive towards Al 3+ ions even in the presence of other commonly coexisting metal ions. The detection limit of Al 3+ ions is at the parts per billion level. Interestingly, the Al(III) complex of 1 offered a large Stokes shift (>120 nm), which can miximize the selfquenching effect. In addition, possible utilization of this receptor as bio-imaging fluorescent probe to detect Al 3+ in human cervical HeLa cancer cell lines was also investigated by confocal fluorescence microscopy. - Highlights: • A new Schiff base chemosensor is reported. • The sensor for Al 3+ offers large Stokes shift. • The detection limit of Al 3+ in CH 3 OH solution is at the parts per billion level. • The utilization of sensor for the monitoring of Al 3+ levels in living cells was examined

High Porosity Alumina as Matrix Material for Composites of Al-Mg Alloys

International Nuclear Information System (INIS)

Gömze, L A; Egész, Á; Gömze, L N; Ojima, F

2013-01-01

The sophisticated industry and technologies require higher and higher assumptions against mechanical strength and surface hardness of ceramic reinforced metal alloys and metal matrix composites. Applying the well-known alumina powders by dry pressing technology and some special pore-forming additives and sintering technology the authors have successfully developed a new, high porosity alumina matrix material for composites of advenced Al-Mg alloys. The developed new matrix material have higher than 30% porosity, with homogenous porous structure and pore sizes from few nano up to 2–3 mm depending on the alloys containments. Thanks to the used materials and the sintering conditions the authors could decrease the wetting angles less than 90° between the high porosity alumina matrix and the Al-Mg alloys. Applied analytical methods in this research were laser granulometry, scanning electron microscopy, and X-ray diffraction. Digital image analysis was applied to microscopy results, to enhance the results of transformation

High temperature oxidation-sulfidation behavior of Cr-Al2O3 and Nb-Al2O3 composites densified by spark plasma sintering

International Nuclear Information System (INIS)

Saucedo-Acuna, R.A.; Monreal-Romero, H.; Martinez-Villafane, A.; Chacon-Nava, J.G.; Arce-Colunga, U.; Gaona-Tiburcio, C.; De la Torre, S.D.

2007-01-01

The high temperature oxidation-sulfidation behavior of Cr-Al 2 O 3 and Nb-Al 2 O 3 composites prepared by mechanical alloying (MA) and spark plasma sintering (SPS) has been studied. These composite powders have a particular metal-ceramic interpenetrating network and excellent mechanical properties. Oxidation-sulfidation tests were carried out at 900 deg. C, in a 2.5%SO 2 + 3.6%O 2 + N 2 (balance) atmosphere for 48 h. The results revealed the influence of the sintering conditions on the specimens corrosion resistance, i.e. the Cr-Al 2 O 3 and Nb-Al 2 O 3 composite sintered at 1310 deg. C/4 min showed better corrosion resistance (lower weight gains) compared with those found for the 1440 deg. C/5 min conditions. For the former composite, a protective Cr 2 O 3 layer immediately forms upon heating, whereas for the later pest disintegration was noted. Thus, under the same sintering conditions the Nb-Al 2 O 3 composites showed the highest weight gains. The oxidation products were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy

CrN/AlN nanolaminate coatings deposited via high power pulsed and middle frequency pulsed magnetron sputtering

International Nuclear Information System (INIS)

Bagcivan, N.; Bobzin, K.; Ludwig, A.; Grochla, D.; Brugnara, R.H.

2014-01-01

Nanolaminate coatings based on transition metal nitrides such as CrN, AlN and TiN deposited via physical vapor deposition (PVD) have shown great advantage as protective coatings on tools and components subject to high loads in tribological applications. By varying the individual layer materials and their thicknesses it is possible to optimize the coating properties, e.g. hardness, Young's modulus and thermal stability. One way for further improvement of coating properties is the use of advanced PVD technologies. High power pulsed magnetron sputtering (HPPMS) is an advancement of pulsed magnetron sputtering (MS). The use of HPPMS allows a better control of the energetic bombardment of the substrate due to the higher ionization degree of metallic species. It provides an opportunity to influence chemical and mechanical properties by varying the process parameters. The present work deals with the development of CrN/AlN nanolaminate coatings in an industrial scale unit by using two different PVD technologies. Therefore, HPPMS and mfMS (middle frequency magnetron sputtering) technologies were used. The bilayer period Λ, i.e. the thickness of a CrN/AlN double layer, was varied between 6.2 nm and 47.8 nm by varying the rotational speed of the substrate holders. In a second step the highest rotational speed was chosen and further HPPMS CrN/AlN coatings were deposited applying different HPPMS pulse lengths (40, 80, 200 μs) at the same mean cathode power and frequency. Thickness, morphology, roughness and phase composition of the coatings were analyzed by means of scanning electron microscopy (SEM), confocal laser microscopy, and X-ray diffraction (XRD), respectively. The chemical composition was determined using glow discharge optical emission spectroscopy (GDOES). Detailed characterization of the nanolaminate was conducted by transmission electron microscopy (TEM). The hardness and the Young's modulus were analyzed by nanoindentation measurements. The residual

Texture-enhanced Al-Cu electrodes on ultrathin Ti buffer layers for high-power durable 2.6 GHz SAW filters

Science.gov (United States)

Fu, Sulei; Wang, Weibiao; Xiao, Li; Lu, Zengtian; Li, Qi; Song, Cheng; Zeng, Fei; Pan, Feng

2018-04-01

Achieving high resistance to acoustomigration and electromigration in the electrodes used in high-power and high-frequency surface acoustic wave (SAW) filters is important to mobile communications development. In this study, the effects of the Ti buffer layers on the textures and acoustomigration and electromigration resistances of the Al-Cu electrodes were studied comprehensively. The results demonstrate that both power durability and electromigration lifetime are positively correlated with the Al-Cu electrode texture quality. Ultrathin (˜2 nm) Ti can lead to the strongest Al-Cu (111) textured electrodes, with a full width at half maximum of the rocking curve of 2.09°. This represents a remarkable enhancement of the power durability of high-frequency 2.6 GHz SAW filters from 29 dBm to 35 dBm. It also produces lifetime almost 7 times longer than those of electrodes without Ti buffer layers in electromigration tests. X-ray diffraction and transmission electron microscopy analyses revealed that these improved acoustomigration and electromigration resistances can be attributed primarily to the reductions in overall and large-angle grain boundaries in the highly Al-Cu (111) textured electrodes. Furthermore, the growth mechanism of highly Al-Cu texture films is discussed in terms of surface-interface energy balance.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

2013-11-29

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

International Nuclear Information System (INIS)

Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

2013-01-01

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

The Effect of Nb Addition on the Microstructure and the High-Temperature Strength of Fe3Al Aluminide

Science.gov (United States)

Kratochvíl, Petr; Švec, Martin; Král, Robert; Veselý, Jozef; Lukáč, Pavel; Vlasák, Tomáš

2018-02-01

The microstructural and high-temperature mechanical properties of Fe-26Al-xNb (x = 3 and 5 at. pct) are compared. The alloys were investigated "as cast" and after hot rolling at 1473 K (1200 °C). Scanning electron microscopes equipped with EDS and EBSD were used for the microstructure and phase identification. The addition of 3 at. pct of Nb into the Fe3Al matrix leads to the formation of C14 λ—Laves phase (Fe,Al)2Nb (LP) particles spread in the Fe3Al matrix, while an eutectic with thin lamellae of LP C14 λ—Laves phase (Fe,Al)2Nb and matrix is also formed in the iron aluminide with 5 at. pct of Nb. The presence of incoherent precipitates is connected with the enhancement of the high-temperature strength and creep resistance.

Development of a database for the prediction of phases in Pt-Al-Cr-Ru alloys for high-temperature and corrosive environments: Al-Cr-Ru

International Nuclear Information System (INIS)

Suess, R.; Watson, A.; Cornish, L.A.; Compton, D.N.

2009-01-01

Platinum-based alloys for high-temperature corrosive environments are being developed which have microstructures that are analogous to the γ/γ' microstructure of the nickel-based superalloys. The need for a predictive thermodynamic database for these alloys was identified. Because experimental studies suggested that such a database should be based on Pt-Al-Cr-Ru, the Al-Cr-Ru system is of importance in this research programme. Using the CALPHAD method and Thermo-Calc software, existing binary data were used to optimise a ternary database for Al-Cr-Ru against available experimental ternary data. The database gives good predictions with regards to phase equilibria in the system as well as the nature of the primary solidification phases.

In Situ Fabrication of AlN Coating by Reactive Plasma Spraying of Al/AlN Powder

Directory of Open Access Journals (Sweden)

Mohammed Shahien

2011-10-01

Full Text Available Reactive plasma spraying is a promising technology for the in situ formation of aluminum nitride (AlN coatings. Recently, it became possible to fabricate cubic-AlN-(c-AlN based coatings through reactive plasma spraying of Al powder in an ambient atmosphere. However, it was difficult to fabricate a coating with high AlN content and suitable thickness due to the coalescence of the Al particles. In this study, the influence of using AlN additive (h-AlN to increase the AlN content of the coating and improve the reaction process was investigated. The simple mixing of Al and AlN powders was not suitable for fabricating AlN coatings through reactive plasma spraying. However, it was possible to prepare a homogenously mixed, agglomerated and dispersed Al/AlN mixture (which enabled in-flight interaction between the powder and the surrounding plasma by wet-mixing in a planetary mill. Increasing the AlN content in the mixture prevented coalescence and increased the nitride content gradually. Using 30 to 40 wt% AlN was sufficient to fabricate a thick (more than 200 µm AlN coating with high hardness (approximately 1000 Hv. The AlN additive prevented the coalescence of Al metal and enhanced post-deposition nitriding through N₂ plasma irradiation by allowing the nitriding species in the plasma to impinge on a larger Al surface area. Using AlN as a feedstock additive was found to be a suitable method for fabricating AlN coatings by reactive plasma spraying. Moreover, the fabricated coatings consist of hexagonal (h-AlN, c-AlN (rock-salt and zinc-blend phases and certain oxides: aluminum oxynitride (Al₅O₆N, cubic sphalerite Al₂₃O₂₇N₅ (ALON and Al₂O₃. The zinc-blend c-AlN and ALON phases were attributed to the transformation of the h-AlN feedstock during the reactive plasma spraying. Thus, the zinc-blend c-Al

Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

International Nuclear Information System (INIS)

Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

2014-01-01

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

Deformation of the Songshugou ophiolite in the Qinling orogen

Science.gov (United States)

Sun, Shengsi; Dong, Yunpeng

2017-04-01

The Qinling orogen, middle part of the China Central Orogenic Belt, is well documented that was constructed by multiple convergences and subsequent collisions between the North China and South China Blocks mainly based on geochemistry and geochronology of ophiolites, magmatic rocks as well as sedimentary reconstruction. However, this model is lack of constraints from deformation of subduction/collision. The Songshugou ophiolite outcropped to the north of the Shangdan suture zone represents fragments of oceanic crust and upper mantle. Previous works have revealed that the ophiolite was formed at an ocean ridge and then emplaced in the northern Qinling belt. Hence, deformation of the ophiolite would provide constraints for the rifting and subduction processes. The ophiolite consists chiefly of metamorphosed mafic and ultramafic rocks. The ultramafic rocks contain coarse dunite, dunitic mylonite and harzburgite, with minor diopsidite veins. The mafic rocks are mainly amphibolite, garnet amphibolite and amphibole schist, which are considered to be eclogite facies and retrograde metamorphosed oceanic crust. Amphibole grains in the mafic rocks exhibit a strong shape-preferred orientation parallel to the foliation, which is also parallel to the lithologic contacts between mafic and ultramafic rocks. Electron backscattered diffraction (EBSD) analyses show strong olivine crystallographic preferred orientations (CPO) in dunite including A-, B-, and C-types formed by (010)[100], (010)[001] and (100)[001] dislocation slip systems, respectively. A-type CPO suggests high temperature plastic deformation in the upper mantle. In comparison, B-type may be restricted to regions with significantly high water content and high differential stress, and C-type may also be formed in wet condition with lower differential stress. Additionally, the dunite evolved into amphibolite facies metamorphism with mineral assemblages of olivine + talc + anthophyllite. Assuming a pressure of 1.5 GPa

TEM/STEM study of Zircaloy-2 with protective FeAl(Cr) layers under simulated BWR environment and high-temperature steam exposure

Science.gov (United States)

Park, Donghee; Mouche, Peter A.; Zhong, Weicheng; Mandapaka, Kiran K.; Was, Gary S.; Heuser, Brent J.

2018-04-01

FeAl(Cr) thin-film depositions on Zircaloy-2 were studied using transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) with respect to oxidation behavior under simulated boiling water reactor (BWR) conditions and high-temperature steam. Columnar grains of FeAl with Cr in solid solution were formed on Zircaloy-2 coupons using magnetron sputtering. NiFe2O4 precipitates on the surface of the FeAl(Cr) coatings were observed after the sample was exposed to the simulated BWR environment. High-temperature steam exposure resulted in grain growth and consumption of the FeAl(Cr) layer, but no delamination at the interface. Outward Al diffusion from the FeAl(Cr) layer occurred during high-temperature steam exposure (700 °C for 3.6 h) to form a 100-nm-thick alumina oxide layer, which was effective in mitigating oxidation of the Zircaloy-2 coupons. Zr intermetallic precipitates formed near the FeAl(Cr) layer due to the inward diffusion of Fe and Al. The counterflow of vacancies in response to the Al and Fe diffusion led to porosity within the FeAl(Cr) layer.

Modification of oxide inclusions in calcium-treated Al-killed high sulphur steels

NARCIS (Netherlands)

Gollapalli, Veerababu; Rao, M.B.Venkata; Karamched, P.S.; Borra, C.R.; Roy, G.G.; Srirangam, Prakash

2018-01-01

A study has been carried out to understand the modification of alumina inclusions in Al-killed high sulphur steel with calcium treatment. For calcium treatment to be effective, a general practice is to desulphurise the steel to prevent the formation of solid CaS inclusions that are harmful to

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

International Nuclear Information System (INIS)

Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

2016-01-01

This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

Scanning electron microscopy analysis of fuel/matrix interaction layers in highly-irradiated U-Mo dispersion fuel plates with Al and Al-Si alloy matrices

Energy Technology Data Exchange (ETDEWEB)

Keiser, Dennis D. Jr; Jue, Jan Fong; Miller, Brandon D.; Gan, Jian; Robinson, Adom B.; Medvedev, Pavel; Madden, James; Wachs, Dan; Meyer, Mitch [Nuclear Fuels and Materials Division, Idaho National Laboratory (United States)

2014-04-15

In order to investigate how the microstructure of fuel/matrix-interaction (FMI) layers change during irradiation, different U-7Mo dispersion fuel plates have been irradiated to high fission density and then characterized using scanning electron microscopy (SEM). Specifically, samples from irradiated U-7Mo dispersion fuel elements with pure Al, Al-2Si and AA4043 (-4.5 wt.%Si) matrices were SEM characterized using polished samples and samples that were prepared with a focused ion beam (FIB). Features not observable for the polished samples could be captured in SEM images taken of the FIB samples. For the Al matrix sample, a relatively large FMI layer develops, with enrichment of Xe at the FMI layer/Al matrix interface and evidence of debonding. Overall, a significant penetration of Si from the FMI layer into the U-7Mo fuel was observed for samples with Si in the Al matrix, which resulted in a change of the size (larger) and shape (round) of the fission gas bubbles. Additionally, solid fission product phases were observed to nucleate and grow within these bubbles. These changes in the localized regions of the microstructure of the U-7Mo may contribute to changes observed in the macroscopic swelling of fuel plates with Al-Si matrices.

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

2009-01-01

The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

Science.gov (United States)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

Deformation mechanisms of nanotwinned Al

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xinghang [Texas A & M Univ., College Station, TX (United States)

2016-11-10

The objective of this project is to investigate the role of different types of layer interfaces on the formation of high density stacking fault (SF) in Al in Al/fcc multilayers, and understand the corresponding deformation mechanisms of the films. Stacking faults or twins can be intentionally introduced (via growth) into certain fcc metals with low stacking fault energy (such as Cu, Ag and 330 stainless steels) to achieve high strength, high ductility, superior thermal stability and good electrical conductivity. However it is still a major challenge to synthesize these types of defects into metals with high stacking fault energy, such as Al. Although deformation twins have been observed in some nanocrystalline Al powders by low temperature, high strain rate cryomilling or in Al at the edge of crack tip or indentation (with the assistance of high stress intensity factor), these deformation techniques typically introduce twins sporadically and the control of deformation twin density in Al is still not feasible. This project is designed to test the following hypotheses: (1) Certain type of layer interfaces may assist the formation of SF in Al, (2) Al with high density SF may have deformation mechanisms drastically different from those of coarse-grained Al and nanotwinned Cu. To test these hypotheses, we have performed the following tasks: (i) Investigate the influence of layer interfaces, stresses and deposition parameters on the formation and density of SF in Al. (ii) Understand the role of SF on the deformation behavior of Al. In situ nanoindentation experiments will be performed to probe deformation mechanisms in Al. The major findings related to the formation mechanism of twins and mechanical behavior of nanotwinned metals include the followings: 1) Our studies show that nanotwins can be introduced into metals with high stacking fault energy, in drastic contrast to the general anticipation. 2) We show two strategies that can effectively introduce growth twins in

Deformation mechanisms of nanotwinned Al

International Nuclear Information System (INIS)

Zhang, Xinghang

2016-01-01

The objective of this project is to investigate the role of different types of layer interfaces on the formation of high density stacking fault (SF) in Al in Al/fcc multilayers, and understand the corresponding deformation mechanisms of the films. Stacking faults or twins can be intentionally introduced (via growth) into certain fcc metals with low stacking fault energy (such as Cu, Ag and 330 stainless steels) to achieve high strength, high ductility, superior thermal stability and good electrical conductivity. However it is still a major challenge to synthesize these types of defects into metals with high stacking fault energy, such as Al. Although deformation twins have been observed in some nanocrystalline Al powders by low temperature, high strain rate cryomilling or in Al at the edge of crack tip or indentation (with the assistance of high stress intensity factor), these deformation techniques typically introduce twins sporadically and the control of deformation twin density in Al is still not feasible. This project is designed to test the following hypotheses: (1) Certain type of layer interfaces may assist the formation of SF in Al, (2) Al with high density SF may have deformation mechanisms drastically different from those of coarse-grained Al and nanotwinned Cu. To test these hypotheses, we have performed the following tasks: (i) Investigate the influence of layer interfaces, stresses and deposition parameters on the formation and density of SF in Al. (ii) Understand the role of SF on the deformation behavior of Al. In situ nanoindentation experiments will be performed to probe deformation mechanisms in Al. The major findings related to the formation mechanism of twins and mechanical behavior of nanotwinned metals include the followings: 1) Our studies show that nanotwins can be introduced into metals with high stacking fault energy, in drastic contrast to the general anticipation. 2) We show two strategies that can effectively introduce growth twins in

Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

Science.gov (United States)

Grady, R.; Bayram, C.

2017-07-01

In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

High-Temperature Corrosion of AlCrSiN Film in Ar-1%SO2 Gas

Directory of Open Access Journals (Sweden)

Poonam Yadav

2017-03-01

Full Text Available AlCrSiN film with a composition of 29.1Al-17.1Cr-2.1Si-51.7N in at. % was deposited on a steel substrate by cathodic arc ion plating at a thickness of 1.8 μm. It consisted of nanocrystalline hcp-AlN and fcc-CrN, where a small amount of Si was dissolved. Corrosion tests were carried out at 800 °C for 5–200 h in Ar-1%SO2 gas. The major corrosion reaction was oxidation owing to the high oxygen affinity of Al and Cr in the film. The formed oxide scale consisted primarily of (Al,Cr2O3, within which Fe, Si, and S were dissolved. Even after corrosion for 200 h, the thickness of the scale was about 0.7–1.2 μm, indicating that the film had good corrosion resistance in the SO2-containing atmosphere.

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

Science.gov (United States)

Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

2018-04-18

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

KAUST Repository

Noriega, Rodrigo; Rivnay, Jonathan; Goris, Ludwig; Kälblein, Daniel; Klauk, Hagen; Kern, Klaus; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Jokisaari, Jacob R.; Kusinski, Greg; Salleo, Alberto

2010-01-01

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

Fabrication and heat treatment of high strength Al-Cu-Mg alloy processed using selective laser melting

Science.gov (United States)

Zhang, Hu; Zhu, Haihong; Nie, Xiaojia; Qi, Ting; Hu, Zhiheng; Zeng, Xiaoyan

2016-04-01

The proposed paper illustrates the fabrication and heat treatment of high strength Al-Cu-Mg alloy produced by selective laser melting (SLM) process. Al-Cu-Mg alloy is one of the heat treatable aluminum alloys regarded as difficult to fusion weld. SLM is an additive manufacturing technique through which components are built by selectively melting powder layers with a focused laser beam. The process is characterized by short laser-powder interaction times and localized high heat input, which leads to steep thermal gradients, rapid solidification and fast cooling. In this research, 3D Al-Cu-Mg parts with relative high density of 99.8% are produced by SLM from gas atomized powders. Room temperature tensile tests reveal a remarkable mechanical behavior: the samples show yield and tensile strengths of about 276 MPa and 402 MPa, respectively, along with fracture strain of 6%. The effect of solution treatment on microstructure and related tensile properties is examined and the results demonstrate that the mechanical behavior of the SLMed Al-Cu-Mg samples can be greatly enhanced through proper heat treatment. After T4 solution treatment at 540°C, under the effect of precipitation strengthening, the tensile strength and the yield strength increase to 532 MPa and 338 MPa, respectively, and the elongation increases to 13%.

High-Pressure Spark Plasma Sintering (HP SPS): A Promising and Reliable Method for Preparing Ti-Al-Si Alloys.

Science.gov (United States)

Knaislová, Anna; Novák, Pavel; Cygan, Sławomir; Jaworska, Lucyna; Cabibbo, Marcello

2017-04-27

Ti-Al-Si alloys are prospective material for high-temperature applications. Due to low density, good mechanical properties, and oxidation resistance, these intermetallic alloys can be used in the aerospace and automobile industries. Ti-Al-Si alloys were prepared by powder metallurgy using reactive sintering, milling, and spark plasma sintering. One of the novel SPS techniques is high-pressure spark plasma sintering (HP SPS), which was tested in this work and applied to a Ti-10Al-20Si intermetallic alloy using a pressure of 6 GPa and temperatures ranging from 1318 K (1045 °C) to 1597 K (1324 °C). The low-porosity consolidated samples consist of Ti₅Si₃ silicides in an aluminide (TiAl) matrix. The hardness varied between 720 and 892 HV 5.

A high-throughput investigation of Fe-Cr-Al as a novel high-temperature coating for nuclear cladding materials.

Science.gov (United States)

Bunn, Jonathan Kenneth; Fang, Randy L; Albing, Mark R; Mehta, Apurva; Kramer, Matthew J; Besser, Matthew F; Hattrick-Simpers, Jason R

2015-07-10

High-temperature alloy coatings that can resist oxidation are urgently needed as nuclear cladding materials to mitigate the danger of hydrogen explosions during meltdown. Here we apply a combination of computationally guided materials synthesis, high-throughput structural characterization and data analysis tools to investigate the feasibility of coatings from the Fe–Cr–Al alloy system. Composition-spread samples were synthesized to cover the region of the phase diagram previous bulk studies have identified as forming protective oxides. The metallurgical and oxide phase evolution were studied via in situ synchrotron glancing incidence x-ray diffraction at temperatures up to 690 K. A composition region with an Al concentration greater than 3.08 at%, and between 20.0 at% and 32.9 at% Cr showed the least overall oxide growth. Subsequently, a series of samples were deposited on stubs and their oxidation behavior at 1373 K was observed. The continued presence of a passivating oxide was confirmed in this region over a period of 6 h.

Modern sedimentary facies, depositional environments, and major controlling processes on an arid siliciclastic coast, Al qahmah, SE Red Sea, Saudi Arabia

Science.gov (United States)

Nabhan, Abdullah I.; Yang, Wan

2018-04-01

The facies and environments along the arid siliciclastic coast of Red Sea in Al Qahmah, Saudi Arabia are studied to establish a depositional model for interpretation of ancient rocks deposited in rift settings. Field and petrographic studies of 151 sediment samples in an area of 20 km2 define seven main facies types: beach, washover fan, tidal channel, dune, sabkha, delta, and wadi (seasonal stream). The wadi and delta facies are composed of poorly to moderately well-sorted, gravelly, medium-to-fine sands. Delta-front sands are redistributed by southward longshore currents to form a beach. Beach facies is composed of well-to-moderately sorted fine sands with minor gravels, which contain high concentrations of magnetite, ilmenite, garnet, pyroxene, amphibole, epidote, titanite, and apatite grains, indicating strong winnowing. Crabs and other burrowers destroy primary sedimentary structures and mix sediments in foreshore and backshore of the beaches. Wind and storm surge rework foreshore and backshore sediments to form washover fans. Sabkha facies occurs extensively in supratidal depressions behind beach, are flooded by rainstorms and spring tide, and capped by a 5-cm-thick crust composed of interlaminated halite, quartz, albite, minor gypsum and biotite, and rarely calcium carbonate. Halite occurs as thin sheets and gypsum as nodules with a chicken-wire structure. Clastic fraction in sabkha sediments ranges from coarse silt to coarse sand with moderate sorting, and is transported by currents and wind. Tidal inlets and tidal creeks assume abandoned wadis and are filled by muddy sand. Sand dunes and sand sheets are 1-7 m high and widely distributed due to variable wind directions. Fine-grained dune sands are moderately well sorted, whereas sheet sands are coarser and poorly sorted due to vegetation baffling. Most eolian sands are sourced from beach deposits. This suite of complex riverine, wave, tidal, wind, chemical, and biological processes form the facies mosaic

First-principles study on the phase transition, elastic properties and electronic structure of Pt{sub 3}Al alloys under high pressure

Energy Technology Data Exchange (ETDEWEB)

Liu, Yanjun [Key Laboratory of Oil and Gas Equipment of Ministry of Education, Southwest Petroleum University, Chengdu, Sichuan 610500 (China); Huang, Huawei [National Key Laboratory for Nuclear Fuel and Materials, Nuclear Power of China, Chengdu, Sichuan 610041 (China); Pan, Yong, E-mail: yongpanyn@163.com [State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming 650106 (China); Zhao, Guanghui; Liang, Zheng [Key Laboratory of Oil and Gas Equipment of Ministry of Education, Southwest Petroleum University, Chengdu, Sichuan 610500 (China)

2014-06-01

Highlights: • The phase transition of Pt{sub 3}Al alloys occurs at 60 GPa. • The elastic modulus of Pt{sub 3}Al alloys increase with increasing pressure. • The cubic structure has good resistance to volume deformation under high pressure. • The pressure enhances the hybridization between Pt atom and Al atom. - Abstract: The phase transition, formation enthalpies, elastic properties and electronic structure of Pt{sub 3}Al alloys are studied using first-principle approach. The calculated results show that the pressure leads to phase transition from tetragonal structure to cubic structure at 60 GPa. With increasing pressure, the elastic constants, bulk modulus and shear modulus of these Pt{sub 3}Al alloys increase linearly and the bond lengths of Pt–Al metallic bonds and the peak at E{sub F} decrease. The cubic Pt{sub 3}Al alloy has excellent resistance to volume deformation under high pressure. We suggest that the phase transition is derived from the hybridization between Pt and Al atoms for cubic structure is stronger than that of tetragonal structure and forms the strong Pt–Al metallic bonds under high pressure.

Laser Weldability of High-Strength Al-Zn Alloys and Its Improvement by the Use of an Appropriate Filler Material

Science.gov (United States)

Enz, Josephin; Riekehr, Stefan; Ventzke, Volker; Huber, Norbert; Kashaev, Nikolai

2016-06-01

Heat-treatable Al-Zn alloys are promising candidates for use as structural lightweight materials in automotive and aircraft applications. This is mainly due to their high strength-to-density ratio in comparison to conventionally employed Al alloys. Laser beam welding is an efficient method for producing joints with high weld quality and has been established in the industry for many years. However, it is well known that aluminum alloys with a high Zn content or, more precisely, with a high (Zn + Mg + Cu) content are difficult to fusion weld due to the formation of porosity and hot cracks. The present study concerns the laser weldability of these hard-to-weld Al-Zn alloys. In order to improve weldability, it was first necessary to understand the reasons for weldability problems and to identify crucial influencing factors. Based on this knowledge, it was finally possible to develop an appropriate approach. For this purpose, vanadium was selected as additional filler material. Vanadium exhibits favorable thermophysical properties and, thereby, can improve the weldability of Al-Zn alloys. The effectiveness of the approach was verified by its application to several Al-Zn alloys with differing amounts of (Zn + Mg + Cu).

Evolution of the microstructure and nanohardness of Ti-48 at.%Al alloy solidified under high pressure

International Nuclear Information System (INIS)

Wang, Hongwei; Zhu, Dongdong; Zou, Chunming; Wei, Zunjie

2012-01-01

Highlights: → The microstructure of Ti-48Al alloy changes under high pressure. → With increasing pressure, the amount of γ s phase decreases. → High pressure leads to the decreasing of lamellar spacing. → The nanohardness of lamellar structure increases with pressure. -- Abstract: In this work the microstructure and nanohardness of Ti-48 at.%Al alloy solidified under different pressures (normal pressure, 2 GPa, 4 GPa) were experimental investigated by using a tungsten-carbide six-anvil apparatus. The results indicate that high pressure does not change the phase constitution of Ti-48 at.%Al alloy. However, the microstructure changes under high pressure. With increasing pressure, the volume fraction of interdendritic γ (γ s ) phase decreases and Al concentration in lamellae increases. When the pressure is 4 GPa, there is only a little γ s embedded in lamellar structure. The volume fraction of γ s phase is approximately 17.0% for normal pressure, 8.73% for 2 GPa, 0.69% for 4 GPa. The lamellar spacings also decrease with pressure, which are 495 nm, 345 nm, 227 nm under normal pressure, 2 GPa, 4 GPa, respectively. The change in nanohardness was discussed based on the microstructural observations. It shows a certain increase of the nanohardness as the pressure increases from normal pressure to 4 GPa. When the pressure is 4 GPa, the nanohardness increases by 50.2% compared with that of normal pressure.

Effects of Alloying Elements on Room and High Temperature Tensile Properties of Al-Si Cu-Mg Base Alloys =

Science.gov (United States)

Alyaldin, Loay

In recent years, aluminum and aluminum alloys have been widely used in automotive and aerospace industries. Among the most commonly used cast aluminum alloys are those belonging to the Al-Si system. Due to their mechanical properties, light weight, excellent castability and corrosion resistance, these alloys are primarily used in engineering and in automotive applications. The more aluminum is used in the production of a vehicle, the less the weight of the vehicle, and the less fuel it consumes, thereby reducing the amount of harmful emissions into the atmosphere. The principal alloying elements in Al-Si alloys, in addition to silicon, are magnesium and copper which, through the formation of Al2Cu and Mg2Si precipitates, improve the alloy strength via precipitation hardening following heat treatment. However, most Al-Si alloys are not suitable for high temperature applications because their tensile and fatigue strengths are not as high as desired in the temperature range 230-350°C, which are the temperatures that are often attained in automotive engine components under actual service conditions. The main challenge lies in the fact that the strength of heat-treatable cast aluminum alloys decreases at temperatures above 200°C. The strength of alloys under high temperature conditions is improved by obtaining a microstructure containing thermally stable and coarsening-resistant intermetallics, which may be achieved with the addition of Ni. Zr and Sc. Nickel leads to the formation of nickel aluminide Al3Ni and Al 9FeNi in the presence of iron, while zirconium forms Al3Zr. These intermetallics improve the high temperature strength of Al-Si alloys. Some interesting improvements have been achieved by modifying the composition of the base alloy with additions of Mn, resulting in an increase in strength and ductility at both room and high temperatures. Al-Si-Cu-Mg alloys such as the 354 (Al-9wt%Si-1.8wt%Cu-0.5wt%Mg) alloys show a greater response to heat treatment as a

High-pressure coolant effect on the surface integrity of machining titanium alloy Ti-6Al-4V: a review

Science.gov (United States)

Liu, Wentao; Liu, Zhanqiang

2018-03-01

Machinability improvement of titanium alloy Ti-6Al-4V is a challenging work in academic and industrial applications owing to its low thermal conductivity, low elasticity modulus and high chemical affinity at high temperatures. Surface integrity of titanium alloys Ti-6Al-4V is prominent in estimating the quality of machined components. The surface topography (surface defects and surface roughness) and the residual stress induced by machining Ti-6Al-4V occupy pivotal roles for the sustainability of Ti-6Al-4V components. High-pressure coolant (HPC) is a potential choice in meeting the requirements for the manufacture and application of Ti-6Al-4V. This paper reviews the progress towards the improvements of Ti-6Al4V surface integrity under HPC. Various researches of surface integrity characteristics have been reported. In particularly, surface roughness, surface defects, residual stress as well as work hardening are investigated in order to evaluate the machined surface qualities. Several coolant parameters (including coolant type, coolant pressure and the injection position) deserve investigating to provide the guidance for a satisfied machined surface. The review also provides a clear roadmap for applications of HPC in machining Ti-6Al4V. Experimental studies and analysis are reviewed to better understand the surface integrity under HPC machining process. A distinct discussion has been presented regarding the limitations and highlights of the prospective for machining Ti-6Al4V under HPC.

Corrosion resistance of Fe-Al alloy-coated steel under bending stress in high temperature lead-bismuth eutectic

International Nuclear Information System (INIS)

Yamaki, Eriko; Takahashi, Minoru

2009-01-01

Formation of thin Fe-Al alloy layers on the surface of cladding and structural materials is effective to protect a base material from corrosion in high temperature LBE. However, it is concerned that these protective layers may be damaged under various stress conditions. This study on Fe-Al alloy coatings deposited by unbalanced magnetron sputtering (UBMS) is focused to evaluate corrosion resistance and integrity of the Fe-Al coating layers with thickness of 0.5 mm under bending stress in high temperature LBE. High chromium steel specimens (HCM12A, Recloy10) with Fe-Al alloy coating were exposed to LBE pool with low oxygen concentration (up to 5.2x10 -8 wt%) at 550 and 650degC under 45kg-loading for 240 and 500 h. No LBE corrosion was observed in the base metal and coating layer after the tests at 550degC for 550 h. The coating layers could be barrier for corrosion resistance from LBE at 550degC, although the coating scales are cracked by the load. At 650degC, because the base metal was contoccured directly with LBE through cracks across the coating layer. Penetration of LBE to base metal and dissolution of beset metal into LBE occurred. Fe-Al coating layer was not corroded by LBE. (author)

Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Energy Technology Data Exchange (ETDEWEB)

Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-08-01

This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

Science.gov (United States)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

Repository emplacement costs for Al-clad high enriched uranium spent fuel

International Nuclear Information System (INIS)

McDonell, W.R.; Parks, P.B.

1994-01-01

A range of strategies for treatment and packaging of Al-clad high-enriched uranium (HEU) spent fuels to prevent or delay the onset of criticality in a geologic repository was evaluated in terms of the number of canisters produced and associated repository costs incurred. The results indicated that strategies in which neutron poisons were added to consolidated forms of the U-Al alloy fuel generally produced the lowest number of canisters and associated repository costs. Chemical processing whereby the HEU was removed from the waste form was also a low cost option. The repository costs generally increased for isotopic dilution strategies, because of the substantial depleted uranium added. Chemical dissolution strategies without HEU removal were also penalized because of the inert constituents in the final waste glass form. Avoiding repository criticality by limiting the fissile mass content of each canister incurred the highest repository costs

Corrosion testing of NiCrAl(Y) coating alloys in high-temperature and supercritical water

International Nuclear Information System (INIS)

Biljan, S.; Huang, X.; Qian, Y.; Guzonas, D.

2011-01-01

With the development of Generation IV (Gen IV) nuclear power reactors, materials capable of operating in high-temperature and supercritical water environment are essential. This study focuses on the corrosion behavior of five alloys with compositions of Ni20Cr, Ni5Al, Ni50Cr, Ni20Cr5Al and Ni20Cr10AlY above and below the critical point of water. Corrosion tests were conducted at three different pressures, while the temperature was maintained at 460 o C, in order to examine the effects of water density on the corrosion. From the preliminary test results, it was found that the binary alloys Ni20Cr and Ni50Cr showed weight loss above the critical point (23.7 MPa and 460 o C). The higher Cr content alloy Ni50Cr suffered more weight loss than Ni-20Cr under the same conditions. Accelerated weight gain was observed above the critical point for the binary alloy Ni5Al. The combination of Cr, Al and Y in Ni20Cr10AlY provides stable scale formation under all testing conditions employed in this study. (author)

Early High-Intensity Versus Low-Intensity Rehabilitation After Total Knee Arthroplasty (TKA) by Bade et al

DEFF Research Database (Denmark)

Mechlenburg, Inger; Skoffer, Birgit; Dalgas, Ulrik

2017-01-01

Recently, a paper entitled "Early High-Intensity Versus Low-Intensity Rehabilitation After Total Knee Arthroplasty: A Randomized Controlled Trial" was published in Arthritis Care Res by Bade et al. (1). We have read the paper with great interest and noted that the study shows essentially no diffe......Recently, a paper entitled "Early High-Intensity Versus Low-Intensity Rehabilitation After Total Knee Arthroplasty: A Randomized Controlled Trial" was published in Arthritis Care Res by Bade et al. (1). We have read the paper with great interest and noted that the study shows essentially...

Mikrostruktur dan Karakterisasi Sifat Mekanik Lapisan Cr3C2-NiAl-Al2O3 Hasil Deposisi Dengan Menggunakan High Velocity Oxygen Fuel Thermal Spray Coating

Directory of Open Access Journals (Sweden)

Edy Riyanto

2012-03-01

Full Text Available Surface coating processing of industrial component with thermal spray coatings have been applied in many industrial fields. Ceramic matrix composite coating which consists of Cr3C2-Al2O3-NiAl had been carried out to obtain layers of material that has superior mechanical properties to enhance component performance. Deposition of CMC with High Velocity Oxygen Fuel (HVOF thermal spray coating has been employed. This study aims to determine the effect of powder particle size on the microstructure, surface roughness and hardness of the layer, by varying the NiAl powder particle size. Test results show NiAl powder particle size has an influence on the mechanical properties of CMC coating. Hardness of coating increases and surface roughness values of coating decrease with smaller NiAl particle size.  

Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

International Nuclear Information System (INIS)

Grady, R; Bayram, C

2017-01-01

In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

2007-01-01

Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

Science.gov (United States)

Song, Weidong; Wang, Rupeng; Wang, Xingfu; Guo, Dexiao; Chen, Hang; Zhu, Yuntao; Liu, Liu; Zhou, Yu; Sun, Qian; Wang, Li; Li, Shuti

2017-11-29

Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 10 8 , a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

High-Uranium-Loaded U3O8-Al fuel element development program. Part 1

International Nuclear Information System (INIS)

Martin, M.M.

1993-01-01

The High-Uranium-Loaded U 3 O 8 -Al Fuel Element Development Program supports Argonne National Laboratory efforts to develop high-uranium-density research and test reactor fuel to accommodate use of low-uranium enrichment. The goal is to fuel most research and test reactors with uranium of less than 20% enrichment for the purpose of lowering the potential for diversion of highly-enriched material for nonpeaceful usages. The specific objective of the program is to develop the technological and engineering data base for U 3 O 8 -Al plate-type fuel elements of maximal uranium content to the point of vendor qualification for full scale fabrication on a production basis. A program and management plan that details the organization, supporting objectives, schedule, and budget is in place and preparation for fuel and irradiation studies is under way. The current programming envisions a program of about four years duration for an estimated cost of about two million dollars. During the decades of the fifties and sixties, developments at Oak Ridge National Laboratory led to the use of U 3 O 8 -Al plate-type fuel elements in the High Flux Isotope Reactor, Oak Ridge Research Reactor, Puerto Rico Nuclear Center Reactor, and the High Flux Beam Reactor. Most of the developmental information however applies only up to a uranium concentration of about 55 wt % (about 35 vol % U 3 O 8 ). The technical issues that must be addressed to further increase the uranium loading beyond 55 wt % U involve plate fabrication phenomena of voids and dogboning, fuel behavior under long irradiation, and potential for the thermite reaction between U 3 O 8 and aluminum

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

International Nuclear Information System (INIS)

Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

2015-01-01

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Directory of Open Access Journals (Sweden)

Pei-Chung Lin

2016-08-01

Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

High selectivity and stability of Mg-doped Al-MCM-41 for in-situ catalytic upgrading fast pyrolysis bio-oil

International Nuclear Information System (INIS)

Karnjanakom, Surachai; Suriya-umporn, Thanyamai; Bayu, Asep; Kongparakul, Suwadee; Samart, Chanatip; Fushimi, Chihiro; Abudula, Abuliti; Guan, Guoqing

2017-01-01

Highlights: • Mg-doped Al-MCM-41 was developed for in-situ catalytic upgrading of bio-oils. • Mg/Al-MCM-41 exhibited high selectivity to aromatic hydrocarbons. • The ratio of produced hydrocarbon reached up to 80% in upgraded bio-oil. • 1 wt.% Mg/Al-MCM-41 showed the highest catalytic activity. • Mg/Al-MCM-41 had stable reusability due to its coking inhabitation ability. - Abstract: In-situ catalytic upgrading of bio-oils derived from the fast pyrolysis of cellulose, lignin or sunflower stalk over Mg-doped Al-MCM-41 was investigated in details. It is found that Mg species with doping amounts ranged between 0.25 and 10 wt.% was well dispersed on Al-MCM-41, and that doping Mg on Al-MCM-41 effectively adjusted the acidity and basicity of the catalysts, resulting in significant improvement of bio-oil quality. Mg/Al-MCM-41 exhibited high selective conversion of bio-oils derived from cellulose, lignin or sunflower stalk to high value-added aromatic hydrocarbons via catalytic cracking, deoxygenation and aromatization. In the upgraded bio-oil, the relative total hydrocarbon amount reached up to approximately ≥80%, which consisted of aromatic hydrocarbon approximately 76% and aliphatic hydrocarbon approximately 4% for all feedstocks. The selectivity to the monocyclic aromatic hydrocarbons (MAHs) such as benzene, toluene and xylenes (BTXs) increased while the coke formed on the catalyst decreased with the increase in Mg doping amount. 1 wt.% Mg/Al-MCM-41 resulted in the highest relative total hydrocarbon amount in the upgraded bio-oil at lower catalytic deoxygenation temperature, and showed stable reusability for at least 5 cycles. It is expected that Mg/Al-MCM-41 can be widely applied for bio-oil upgrading in a practical process.

Mechanical and Thermophysical Properties of Cubic Rock-Salt AlN Under High Pressure

Science.gov (United States)

Lebga, Noudjoud; Daoud, Salah; Sun, Xiao-Wei; Bioud, Nadhira; Latreche, Abdelhakim

2018-03-01

Density functional theory, density functional perturbation theory, and the Debye model have been used to investigate the structural, elastic, sound velocity, and thermodynamic properties of AlN with cubic rock-salt structure under high pressure, yielding the equilibrium structural parameters, equation of state, and elastic constants of this interesting material. The isotropic shear modulus, Pugh ratio, and Poisson's ratio were also investigated carefully. In addition, the longitudinal, transverse, and average elastic wave velocities, phonon contribution to the thermal conductivity, and interesting thermodynamic properties were predicted and analyzed in detail. The results demonstrate that the behavior of the elastic wave velocities under increasing hydrostatic pressure explains the hardening of the corresponding phonons. Based on the elastic stability criteria under pressure, it is found that AlN with cubic rock-salt structure is mechanically stable, even at pressures up to 100 GPa. Analysis of the Pugh ratio and Poisson's ratio revealed that AlN with cubic rock-salt structure behaves in brittle manner.

Irradiation of Wrought FeCrAl Tubes in the High Flux Isotope Reactor

Energy Technology Data Exchange (ETDEWEB)

Linton, Kory D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Field, Kevin G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Petrie, Christian M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-09-01

The Advanced Fuels Campaign within the Nuclear Technology Research and Development program of the Department of Energy Office of Nuclear Energy is seeking to improve the accident tolerance of light water reactors. Alumina-forming ferritic alloys (e.g., FeCrAl) are one of the leading candidate materials for fuel cladding to replace traditional zirconium alloys because of the superior oxidation resistance of FeCrAl. However, there are still some unresolved questions regarding irradiation effects on the microstructure and mechanical properties of FeCrAl at end-of-life dose levels. In particular, there are concerns related to irradiation-induced embrittlement of FeCrAl alloys due to secondary phase formation. To address this issue, Oak Ridge National Laboratory has developed a new experimental design to irradiate shortened cladding tube specimens with representative 17×17 array pressurized water reactor diameter and thickness in the High Flux Isotope Reactor (HFIR) under relevant temperatures (300–350°C). Post-irradiation examination will include studies of dimensional change, microstructural changes, and mechanical performance. This report briefly summarizes the capsule design concept and the irradiation test matrix for six rabbit capsules. Each rabbit contains two FeCrAl alloy tube specimens. The specimens include Generation I and Generation II FeCrAl alloys with varying processing conditions, Cr concentrations, and minor alloying elements. The rabbits were successfully assembled, welded, evaluated, and delivered to the HFIR along with a complete quality assurance fabrication package. Pictures of the rabbit assembly process and detailed dimensional inspection of select specimens are included in this report. The rabbits were inserted into HFIR starting in cycle 472 (May 2017).

Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

Science.gov (United States)

Lee, Jonathan A.

2000-01-01

A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

Martensitic transformations and the shape memory effect in Ti-Zr-Nb-Al high-temperature shape memory alloys

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fei; Yu, Zhiguo; Xiong, Chengyang [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Qu, Wentao; Yuan, Bifei [School of Mechanical Engineering, Xi’an Shiyou University, Xi’an 710065 (China); Wang, Zhenguo [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Li, Yan, E-mail: liyan@buaa.edu.cn [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China)

2017-01-02

The microstructures, phase transformations, mechanical properties and shape memory effect of Ti-20Zr-10Nb-xAl (x=1, 2, 3, 4 at%) alloys were investigated. The X-ray diffraction results show that the alloys are composed of a single martensitic α″-phase and that the corresponding unit cell volume decreases with increasing Al content. The reverse martensitic transformation start temperature (A{sub s}) of the Ti-20Zr-10Nb-Al alloy is 534 K and decreases with increasing Al content. The addition of Al results in solid solution strengthening and grain refinement strengthening, thus improving the mechanical properties and the shape memory effect of the Ti-20Zr-10 Nb-xAl alloys. The Ti-20Zr-10Nb-3Al alloy shows the greatest shape memory strain (3.2%) and the largest tensile strain (17.6%) as well as a very high tensile strength (886 MPa).

Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

Science.gov (United States)

Ohi, Shintaro; Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

2018-02-01

We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate-drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

Direct separation of arsenic and antimony oxides by high-temperature filtration with porous FeAl intermetallic.

Science.gov (United States)

Zhang, Huibin; Liu, Xinli; Jiang, Yao; Gao, Lin; Yu, Linping; Lin, Nan; He, Yuehui; Liu, C T

2017-09-15

A temperature-controlled selective filtration technology for synchronous removal of arsenic and recovery of antimony from the fume produced from reduction smelting process of lead anode slimes was proposed. The chromium (Cr) alloyed FeAl intermetallic with an asymmetric pore structure was developed as the high-temperature filter material after evaluating its corrosive resistance, structural stability and mechanical properties. The results showed that porous FeAl alloyed with 20wt.% Cr had a long term stability in a high-temperature sulfide-bearing environment. The separation of arsenic and antimony trioxides was realized principally based on their disparate saturated vapor pressures at specific temperature ranges and the asymmetric membrane of FeAl filter elements with a mean pore size of 1.8μm. Pilot-scale filtration tests showed that the direct separation of arsenic and antimony can be achieved by a one-step or two-step filtration process. A higher removal percentage of arsenic can reach 92.24% at the expense of 6∼7% loss of antimony in the two-step filtration process at 500∼550°C and 300∼400°C. The FeAl filters had still good permeable and mechanical properties with 1041h of uninterrupted service, which indicates the feasibility of this high-temperature filtration technology. Copyright © 2017. Published by Elsevier B.V.

Design of Novel Precipitate-Strengthened Al-Co-Cr-Fe-Nb-Ni High-Entropy Superalloys

Science.gov (United States)

Antonov, Stoichko; Detrois, Martin; Tin, Sammy

2018-01-01

A series of non-equiatomic Al-Co-Cr-Fe-Nb-Ni high-entropy alloys, with varying levels of Co, Nb and Fe, were investigated in an effort to obtain microstructures similar to conventional Ni-based superalloys. Elevated levels of Co were observed to significantly decrease the solvus temperature of the γ' precipitates. Both Nb and Co in excessive concentrations promoted the formation of Laves and NiAl phases that formed either during solidification and remained undissolved during homogenization or upon high-temperature aging. Lowering the content of Nb, Co, or Fe prevented the formation of the eutectic type Laves. In addition, lowering the Co content resulted in a higher number density and volume fraction of the γ' precipitates, while increasing the Fe content led to the destabilization of the γ' precipitates. Various aging treatments were performed which led to different size distributions of the strengthening phase. Results from the microstructural characterization and hardness property assessments of these high-entropy alloys were compared to a commercial, high-strength Ni-based superalloy RR1000. Potentially, precipitation-strengthened high-entropy alloys could find applications replacing Ni-based superalloys as structural materials in power generation applications.

Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.

Science.gov (United States)

Jia, Xiuling; Chen, Dunjun; Bin, Liu; Lu, Hai; Zhang, Rong; Zheng, Youdou

2016-06-09

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(-1) to 2 mg L(-1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(-1) and 1.97 μg L(-1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.

Effect of Ti content on structure and properties of Al2CrFeNiCoCuTix high-entropy alloy coatings

International Nuclear Information System (INIS)

Qiu, X.W.; Zhang, Y.P.; Liu, C.G.

2014-01-01

Highlights: • Al 2 CrFeNiCoCuTi x high-entropy alloy coatings were prepared by laser cladding. • Al 2 CrFeNiCoCuTi x coatings show excellent corrosion resistance and wear resistance. • Al 2 CrFeNiCoCuTi x coatings play a good protective effect on Q235 steel. • Ti element promotes the formation of a BCC structure in a certain extent. -- Abstract: The Al 2 CrFeNiCoCuTi x high-entropy alloy coatings were prepared by laser cladding. The structure, hardness, corrosion resistance, wear resistance and magnetic property were studied by metallurgical microscope, scanning electron microscopy with spectroscopy (SEM/EDS), X-ray diffraction, micro/Vickers hardness tester, electrochemical workstation tribometer and multi-physical tester. The result shows that, Al 2 CrFeNiCoCuTi x high-entropy alloy samples consist of the cladding zone, bounding zone, heat affected zone and substrate zone. The bonding between the cladding layer and the substrate of a good combination; the cladding zone is composed mainly of equiaxed grains and columnar crystal; the phase structure of Al 2 CrFeNiCoCuTi x high-entropy alloy coatings simple for FCC, BCC and Laves phase due to high-entropy affect. Ti element promotes the formation of a BCC structure in a certain extent. Compared with Q235 steel, the free-corrosion current density of Al 2 CrFeNiCoCuTi x high-entropy alloy coatings is reduced by 1–2 orders of magnitude, the free-corrosion potential is more “positive”. With the increasing of Ti content, the corrosion resistance of Al 2 CrFeCoCuNiTi x high-entropy alloy coatings enhanced in 0.5 mol/L HNO 3 solution. Compared with Q235 steel, the relative wear resistance of Al 2 CrFeCoCuNiTi x high-entropy alloy coatings has improved greatly; both the hardness and plasticity are affecting wear resistance. Magnetization loop shows that, Ti 0.0 high-entropy alloy is a kind of soft magnetic materials

The reactive element effect of yttrium and yttrium silicon on high temperature oxidation of NiCrAl coating

Science.gov (United States)

Ramandhany, S.; Sugiarti, E.; Desiati, R. D.; Martides, E.; Junianto, E.; Prawara, B.; Sukarto, A.; Tjahjono, A.

2018-03-01

The microstructure formed on the bond coat affects the oxidation resistance, particularly the formation of a protective oxide layer. The adhesion of bond coat and TGO increased significantly by addition of reactive element. In the present work, the effect of yttrium and yttrium silicon as reactive element (RE) on NiCrAl coating was investigated. The NiCrAl (without RE) and NiCrAlX (X:Y or YSi) bond coating were deposited on Hastelloy C-276 substrate by High Velocity Oxygen Fuel (HVOF) method. Isothermal oxidation was carried out at 1000 °C for 100 hours. The results showed that the addition of RE could prevent the breakaway oxidation. Therefore, the coating with reactive element were more protective against high temperature oxidation. Furthermore, the oxidation rate of NiCrAlY coating was lower than NiCrAlYSi coating with the total mass change was ±2.394 mg/cm2 after 100 hours of oxidation. The thickness of oxide scale was approximately 1.18 μm consisting of duplex oxide scale of spinel NiCr2O4 in outer scale and protective α-Al2O3 in inner scale.

Preliminary study of the characteristics of a high Mg containing Al-Mg-Si alloy

International Nuclear Information System (INIS)

Yan, F; McKay, B J; Fan, Z; Chen, M F

2012-01-01

An Al-20Mg-4Si high Mg containing alloy has been produced and its characteristics investigated. The as-cast alloy revealed primary Mg 2 Si particles evenly distributed throughout an α-Al matrix with a β-Al 3 Mg 2 fully divorced eutectic phase observed in interdendritic regions. The Mg 2 Si particles displayed octahedral, truncated octahedral, and hopper morphologies. Additions of Sb, Ti and Zr had a refining influence reducing the size of the Mg 2 Si from 52 ± 4 μm to 25 ± 0.1 μm, 35 ± 1 μm and 34 ± 1 μm respectively. HPDC tensile test samples could be produced with a 0.6 wt.% Mn addition which prevented die soldering. Solution heating for 1 hr was found to dissolve the majority of the Al 3 Mg 2 eutectic phase with no evidence of any effect on the primary Mg 2 Si. Preliminary results indicate that the heat treatment has a beneficial effect on the elongation and the UTS.

Improvement in ductility of high strength polycrystalline Ni-rich Ni{sub 3}Al alloy produced by EB-PVD

Energy Technology Data Exchange (ETDEWEB)

Sun, J.Y.; Pei, Y.L.; Li, S.S.; Zhang, H.; Gong, S.K., E-mail: gongsk@buaa.edu.cn

2014-11-25

Highlights: • High strength and high ductility of polycrystalline Ni-rich Ni{sub 3}Al alloy sheets were produced. • The elongation could be enhanced from ∼0.5% to ∼14.6% by microstructural control. • The fracture strength (∼820 MPa) was enhanced by the precipitation strengthening. • This work provides a general processing for repairing the worn single crystal blades. - Abstract: A 300 μm Ni-rich Ni{sub 3}Al sheet was produced by electron beam physical vapor deposition (EB-PVD) and followed by different heat treatments to obtain fine γ′/γ two-phase structures with large elongation. Tensile testing was performed at room-temperature, and the corresponding mechanisms were investigated in detail. Results indicated that the as-deposited Ni{sub 3}Al alloy exhibited non-equilibrium directional columnar crystal, and transited to equiaxed crystal with uniformly distributed tough γ phase after heat treatment. Meanwhile, the fracture mechanism transited from brittleness to a mixture of ductility and brittleness modes. With an appropriate heat treatment, high strength (ultimate tensile strength obtained 828 MPa) and high ductility (elongation obtained 14.6%) Ni{sub 3}Al alloy has been achieved, which was due to the mesh network microstructure. A series of transmission electron microscope (TEM) characterizations confirmed that the increasing flow stress of Ni{sub 3}Al alloy was attributed to the cubical secondary γ′ phase precipitates (25–50 nm) within the γ phase. This work provides a potential strategy for repairing the worn tip of single crystal engine blades using Ni-rich Ni{sub 3}Al alloy by EB-PVD.

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Directory of Open Access Journals (Sweden)

Weihuang Yang

2013-05-01

Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

Nano features of Al/Au ultrasonic bond interface observed by high resolution transmission electron microscopy

International Nuclear Information System (INIS)

Ji Hongjun; Li Mingyu; Kim, Jong-Myung; Kim, Dae-Won; Wang Chunqing

2008-01-01

Nano-scale interfacial details of ultrasonic AlSi1 wire wedge bonding to a Au/Ni/Cu pad were investigated using high resolution transmission electron microscopy (HRTEM). The intermetallic phase Au 8 Al 3 formed locally due to diffusion and reaction activated by ultrasound at the Al/Au bond interface. Multilayer sub-interfaces roughly parallel to the wire/pad interface were observed among this phase, and interdiffusional features near the Au pad resembled interference patterns, alternately dark and bright bars. Solid-state diffusion theory cannot be used to explain why such a thick compound formed within milliseconds at room temperature. The major formation of metallurgical bonds was attributed to ultrasonic cyclic vibration

A Study on Development of High Strength Al-Zn Based alloy for Die Casting Ⅲ

Energy Technology Data Exchange (ETDEWEB)

Shin, Sang-Soo; Park, Ik-Min [Pusan National University, Busan (Korea, Republic of); Yeom, Gil-Young; Lim, Kyoung-Mook [Korea Institute of Industrial Technology, Incheon (Korea, Republic of); Son, Hyun-Jin [Oh-Sung Co. Ltd., Siheung (Korea, Republic of)

2015-09-15

In this study, the microstructural evolution and various characteristics of Al-20⁓45wt%Zn alloys were investigated. In terms of microstructure, as the amount of Zn addition to the alloys increased, the α-phase size decreased and the α+η non-equilibrium solidification phase fraction increased. Also, increasing Zn content improved the wear resistance of the alloys, but reduced the damping capacity and toughness of the alloys. Their physical properties of the Al-Zn alloy with high Zn content, specifically the wear resistance and toughness, were superior to those of commercial ALDC12 alloys for die-casting. Based on these results, we considered the possibility of application of the developed Al-Zn alloy as a structural material.

A Study on Development of High Strength Al-Zn Based alloy for Die Casting Ⅲ

International Nuclear Information System (INIS)

Shin, Sang-Soo; Park, Ik-Min; Yeom, Gil-Young; Lim, Kyoung-Mook; Son, Hyun-Jin

2015-01-01

In this study, the microstructural evolution and various characteristics of Al-20⁓45wt%Zn alloys were investigated. In terms of microstructure, as the amount of Zn addition to the alloys increased, the α-phase size decreased and the α+η non-equilibrium solidification phase fraction increased. Also, increasing Zn content improved the wear resistance of the alloys, but reduced the damping capacity and toughness of the alloys. Their physical properties of the Al-Zn alloy with high Zn content, specifically the wear resistance and toughness, were superior to those of commercial ALDC12 alloys for die-casting. Based on these results, we considered the possibility of application of the developed Al-Zn alloy as a structural material.

Some observations on the high temperature oxidation behaviour of plasma sprayed Ni3Al coatings

International Nuclear Information System (INIS)

Singh, H.; Prakash, S.; Puri, D.

2007-01-01

High temperature oxidation resistance of the superalloys can be greatly enhanced by plasma sprayed coatings and this is a growing industry of considerable economic importance. The purpose of these coatings is to form long-lasting oxidation protective scales. In the current investigation, Ni 3 Al powder was prepared by mechanical mixing of pure nickel and aluminium powders in a ball mill. Subsequently Ni 3 Al powder was deposited on three Ni-base superalloys: Superni 600, Superni 601 and Superni 718 and, one Fe-base superalloy, Superfer 800H by shrouded plasma spray process. Oxidation studies were conducted on the coated superalloys in air at 900 deg. C under cyclic conditions for 50 cycles. Each cycle consisted of 1 h heating followed by 20 min of cooling in air. The thermogravimetric technique was used to approximate the kinetics of oxidation. All the coated superalloys nearly followed parabolic rate law of oxidation. X-ray diffraction, SEM/EDAX and EPMA techniques were used to analyse the oxidation products. The Ni 3 Al coating was found to be successful in maintaining its adherence to the superalloy substrates in all the cases. The oxide scales formed on the oxidised coated superalloys were found to be intact and spallation-free. XRD analysis revealed the presence of phases like NiO, Al 2 O 3 and NiAl 2 O 4 in the oxide scales, which are reported as protective oxides against high temperature oxidation. The XRD results were further supported by SEM/EDAX and EPMA

Al based ultra-fine eutectic with high room temperature plasticity and elevated temperature strength

Energy Technology Data Exchange (ETDEWEB)

Tiwary, C.S., E-mail: cst311@gmail.com [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka (India); Kashyap, S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka (India); Kim, D.H. [Center for Non-Crystalline Materials, Department of Metallurgical Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Chattopadhyay, K. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, Karnataka (India)

2015-07-15

Developments of aluminum alloys that can retain strength at and above 250 °C present a significant challenge. In this paper we report an ultrafine scale Al–Fe–Ni eutectic alloy with less than 3.5 at% transition metals that exhibits room temperature ultimate tensile strength of ~400 MPa with a tensile ductility of 6–8%. The yield stress under compression at 300 °C was found to be 150 MPa. We attribute it to the refinement of the microstructure that is achieved by suction casting in copper mold. The characterization using scanning and transmission electron microscopy (SEM and TEM) reveals an unique composite structure that contains the Al–Al{sub 3}Ni rod eutectic with spacing of ~90 nm enveloped by a lamellar eutectic of Al–Al{sub 9}FeNi (~140 nm). Observation of subsurface deformation under Vickers indentation using bonded interface technique reveals the presence of extensive shear banding during deformation that is responsible for the origin of ductility. The dislocation configuration in Al–Al{sub 3}Ni eutectic colony indicates accommodation of plasticity in α-Al with dislocation accumulation at the α-Al/Al{sub 3}Ni interface boundaries. In contrast the dislocation activities in the intermetallic lamellae are limited and contain set of planner dislocations across the plates. We present a detailed analysis of the fracture surface to rationalize the origin of the high strength and ductility in this class of potentially promising cast alloy.

Synthesis of high Al content AlxGa1−xN ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

International Nuclear Information System (INIS)

Cai, Hua; You, Qinghu; Hu, Zhigao; Guo, Shuang; Yang, Xu; Sun, Jian; Xu, Ning; Wu, Jiada

2014-01-01

Highlights: • Al x Ga 1−x N films were synthesized by co-ablation of an Al target and a GaAs target. • Nitrogen plasma was used to assist the synthesis of Al x Ga 1−x N ternary films. • The Al x Ga 1−x N films are slightly rich in N with an Al content above 0.6. • The Al x Ga 1−x N films are hexagonal wurtzite in crystal structure. • The Al x Ga 1−x N films have an absorption edge of 260 nm and a band gap of 4.7 eV. - Abstract: We present the synthesis of Al x Ga 1−x N ternary films by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in the environment of nitrogen plasma which provides nitrogen for the films and assists the formation of nitride films. Field emission scanning electron microscopy exposes the smooth surface appearance and dense film structure. X-ray diffraction, Fourier-transform infrared spectroscopy and Raman scattering spectroscopy reveal the hexagonal wurtzite structure. Optical characterization shows high optical transmittance with an absorption edge of about 260 nm and a band gap of 4.7 eV. Compositional analysis gives the Al content of about 0.6. The structure and optical properties of the Al x Ga 1−x N films are compared with those of binary GaN and AlN films synthesized by ablating GaAs or Al target with the same nitrogen plasma assistance

Corrosion Behavior of High Pressure Die Cast Al-Ni and Al-Ni-Ca Alloys in 3.5% NaCl Solution

Energy Technology Data Exchange (ETDEWEB)

Arthanari, Srinivasan; Jang, Jae Cheol; Shin, Kwang Seon [Seoul National University, Seoul (Korea, Republic of)

2017-06-15

In this investigation corrosion behavior of newly developed high-pressure die cast Al-Ni (N15) and Al-Ni-Ca (NX1503) alloys was studied in 3.5% NaCl solution. The electrochemical corrosion behavior was evaluated using open circuit potential (OCP) measurement, potentiodynamic polarization, and electrochemical impedance spectroscopy (EIS) techniques. Potentiodynamic polarization results validated that NX1503 alloy exhibited lower corrosion current density (i{sub corr}) value (5.969 μA/cm{sup 2}) compared to N15 (7.387 μA/cm{sup 2}). EIS-Bode plots revealed a higher impedance (|Z|) value and maximum phase angle value for NX1503 than N15 alloy. Equivalent circuit curve fitting analysis revealed that surface layer (R{sub 1}) and charge transfer resistance (R{sub ct}) values of NX1503 alloy was higher compared to N15 alloy. Immersion corrosion studies were also conducted for alloys using fishing line specimen arrangement to simultaneously measure corrosion rates from weight loss (P{sub W}) and hydrogen volume (P{sub H}) after 72 hours and NX1503 alloy had lower corrosion rate compared to N15 alloy. The addition of Ca to N15 alloy significantly reduced the Al{sub 3}Ni intermetallic phase and further grain refinement may be attributed for reduction in the corrosion rate.

A highly sensitive, single selective, fluorescent sensor for Al{sup 3+} detection and its application in living cell imaging

Energy Technology Data Exchange (ETDEWEB)

Ye, Xing-Pei [Department of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Sun, Shao-bo; Li, Ying-dong [Institute of Integrated Traditional and Western Medicine, Gansu University of Traditional Chinese Medicine, Lanzhou 730000 (China); Zhi, Li-hua [Department of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wu, Wei-na, E-mail: wuwn08@hpu.edu.cn [Department of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Yuan, E-mail: wangyuan08@hpu.edu.cn [Department of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China)

2014-11-15

A new o-aminophenol-based fluorogenic chemosensor methyl 3,5-bis((E)-(2-hydroxyphenylimino)methyl)-4-hydroxybenzoate 1 have been synthesized by Schiff base condensation of methyl 3,5-diformyl-4-hydroxybenzoate with o-aminophenol, which exhibits high selectivity and sensitivity toward Al{sup 3+}. Fluorescence titration studies of receptors 1 with different metal cations in CH{sub 3}OH medium showed highly selective and sensitive towards Al{sup 3+} ions even in the presence of other commonly coexisting metal ions. The detection limit of Al{sup 3+} ions is at the parts per billion level. Interestingly, the Al(III) complex of 1 offered a large Stokes shift (>120 nm), which can miximize the selfquenching effect. In addition, possible utilization of this receptor as bio-imaging fluorescent probe to detect Al{sup 3+} in human cervical HeLa cancer cell lines was also investigated by confocal fluorescence microscopy. - Highlights: • A new Schiff base chemosensor is reported. • The sensor for Al{sup 3+} offers large Stokes shift. • The detection limit of Al{sup 3+} in CH{sub 3}OH solution is at the parts per billion level. • The utilization of sensor for the monitoring of Al{sup 3+} levels in living cells was examined.

Guiding of low-energy electrons by highly ordered Al2 O3 nanocapillaries

DEFF Research Database (Denmark)

Milosavljević, A.R.; Víkor, G.; Pešić, Z.D.

2007-01-01

We report an experimental study of guided transmission of low-energy (200-350 eV) electrons through highly ordered Al2 O3 nanocapillaries with large aspect ratio (140 nm diameter and 15 μm length). The nanochannel array was prepared using self-ordering phenomena during a two-step anodization...... process of a high-purity aluminum foil. The experimental results clearly show the existence of the guiding effect, as found for highly charged ions. The guiding of the electron beam was observed for tilt angles up to 12°. As seen for highly charged ions, the guiding efficiency increases with decreasing...

Rambutan-like CNT-Al2O3 scaffolds for high-performance cathode catalyst layers of polymer electrolyte fuel cells

Science.gov (United States)

Chang, KwangHyun; Cho, Seonghun; Lim, Eun Ja; Park, Seok-Hee; Yim, Sung-Dae

2018-03-01

Rambutan-like CNT-Al2O3 scaffolds are introduced as a potential candidate for CNT-based catalyst supports to overcome the CNT issues, such as the easy bundling in catalyst ink and the poor pore structure of the CNT-based catalyst layers, and to achieve high MEA performance in PEFCs. Non-porous α-phase Al2O3 balls are introduced to enable the growth of multiwalled CNTs, and Pt nanoparticles are loaded onto the CNT surfaces. In a half-cell, the Pt/CNT-Al2O3 catalyst shows much higher durability than those of a commercial Pt/C catalyst even though it shows lower oxygen reduction reaction (ORR) activity than Pt/C. After using the decal process for MEA formation, the Pt/CNT-Al2O3 shows comparable initial performance characteristics to Pt/C, overcoming the lower ORR activity, mainly due to the facile oxygen transport in the cathode catalyst layers fabricated with the CNT-Al2O3 scaffolds. The Pt/CNT-Al2O3 also exhibits much higher durability against carbon corrosion than Pt/C owing to the durable characteristics of CNTs. Systematic analysis of single cell performance for both initial and after degradation is provided to understand the origin of the high initial performance and durable behavior of Pt/CNT-Al2O3-based catalyst layers. This will provide insights into the design of electrocatalysts for high-performance MEAs in PEFCs.

Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

International Nuclear Information System (INIS)

Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon

2004-01-01

The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation Tolerance of Controlled Fusion Welds in High Temperature Oxidation Resistant FeCrAl Alloys

Energy Technology Data Exchange (ETDEWEB)

Gussev, Maxim N. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Field, Kevin G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-08-01

High temperature oxidation resistant iron-chromium-aluminum (FeCrAl) alloys are candidate alloys for nuclear applications due to their exceptional performance during off-normal conditions such as a loss-of-coolant accident (LOCA) compared to currently deployed zirconium-based claddings [1]. A series of studies have been completed to determine the weldability of the FeCrAl alloy class and investigate the weldment performance in the as-received (non-irradiated) state [2,3]. These initial studies have shown the general effects of composition and microstructure on the weldability of FeCrAl alloys. Given this, limited details on the radiation tolerance of FeCrAl alloys and their weldments exist. Here, the highest priority candidate FeCrAl alloys and their weldments have been investigated after irradiation to enable a better understanding of FeCrAl alloy weldment performance within a high-intensity neutron field. The alloys examined include C35M (Fe-13%Cr-5% Al) and variants with aluminum (+2%) or titanium carbide (+1%) additions. Two different sub-sized tensile geometries, SS-J type and SS-2E (or SS-mini), were neutron irradiated in the High Flux Isotope Reactor to 1.8-1.9 displacements per atom (dpa) in the temperature range of 195°C to 559°C. Post irradiation examination of the candidate alloys was completed and included uniaxial tensile tests coupled with digital image correlation (DIC), scanning electron microscopy-electron back scattered diffraction analysis (SEM-EBSD), and SEM-based fractography. In addition to weldment testing, non-welded parent material was examined as a direct comparison between welded and non-welded specimen performance. Both welded and non-welded specimens showed a high degree of radiation-induced hardening near irradiation temperatures of 200°C, moderate radiation-induced hardening near temperatures of 360°C, and almost no radiation-induced hardening at elevated temperatures near 550°C. Additionally, low-temperature irradiations showed

Fabrication of FeAl Intermetallic Foams by Tartaric Acid-Assisted Self-Propagating High-Temperature Synthesis

Directory of Open Access Journals (Sweden)

Krzysztof Karczewski

2018-04-01

Full Text Available Iron aluminides are intermetallics with interesting applications in porous form thanks to their mechanical and corrosion resistance properties. However, making porous forms of these materials is not easy due to their high melting points. We formed FeAl foams by elemental iron and aluminum powders sintering with tartaric acid additive. Tartaric acid worked as an in situ gas-releasing agent during the self-propagating high-temperature synthesis of FeAl intermetallic alloy, which was confirmed by X-ray diffraction measurements. The porosity of the formed foams was up to 36 ± 4%. In the core of the sample, the average equivalent circle diameter was found to be 47 ± 20 µm, while on the surface, it was 35 ± 16 µm; thus, the spread of the pore size was smaller than reported previously. To investigate functional applications of the formed FeAl foam, the pressure drop of air during penetration of the foam was examined. It was found that increased porosity of the material increased the flow of the air through the metallic foam.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

Science.gov (United States)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

The role of social toxicity in responses to a slowly-evolving environmental disaster: the case of amphibole asbestos exposure in Libby, Montana, USA.

Science.gov (United States)

Cline, Rebecca J W; Orom, Heather; Chung, Jae Eun; Hernandez, Tanis

2014-09-01

Experiencing a disaster has significant negative effects on psychological adjustment. Case study accounts point to two consistent trends in slowly-evolving environmental disasters: (a) patterns of negative social dynamics, and (b) relatively worse psychological outcomes than in natural disasters. Researchers have begun to explicitly postulate that the social consequences of slowly-evolving environmental disasters (e.g., community conflict) have their own effects on victims' psychological outcomes. This study tested a model of the relationship between those social consequences and psychological adjustment of victims of a slowly-evolving environmental disaster, specifically those whose health has been compromised by the amphibole asbestos disaster in Libby, MT. Results indicate that experiencing greater community conflict about the disaster was associated with greater family conflict about the disaster which, in turn, was associated with greater social constraints on talking with others about their disease, both directly and indirectly through experiencing stigmatization. Experiencing greater social constraints was associated with worse psychological adjustment, both directly and indirectly through failed social support. Findings have implications for understanding pathways by which social responses create negative effects on mental health in slowly-evolving environmental disasters. These pathways suggest points for prevention and response (e.g., social support, stigmatization of victims) for communities experiencing slowly-evolving environmental disasters.

Tensile behaviour at room and high temperatures of novel metal matrix composites based on hyper eutectic Al-Si alloys

International Nuclear Information System (INIS)

Valer, J.; Rodriguez, J.M.; Urcola, J.J.

1997-01-01

This work shows the improvement obtained on tensile stress at room and high temperatures of hyper eutectic Al-Si alloys. These alloys are produced by a combination of spray-forming, extrusion and thixoforming process, in comparison with conventional casting alloys.Al-25% Si-5%Cu. Al-25%Si-5%Cu-2%Mg and Al-30%Si-5%Cu alloys have been studied relating their microstructural parameters with tensile stress obtained and comparing them with conventional Al-20%Si. Al-36%Si and Al-50%Si alloys. Al-25%Si-5%Cu alloy-was tested before and after semi-solid forming, in order to distinguish the different behaviour of this alloy due to the different microstructure. The properties obtained with these alloys were also related to Al-SiC composites formed by similar processes. (Author) 20 refs

Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

Energy Technology Data Exchange (ETDEWEB)

Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

2011-07-01

Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

Science.gov (United States)

Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

2018-06-01

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

Time-separated oscillatory fields for high-precision mass measurements on short-lived Al and Ca nuclides

CERN Document Server

George, Simon; Blank, B.; Blaum, K.; Breitenfeldt, M.; Hager, U.; Herfurth, F.; Herlert, A.; Kellerbauer, A.; Kluge, H.J.; Kretzschmar, M.; Lunney, D.; Savreux, R.; Schwarz, Andreas S.; Schweikhard, L.; Yazidjian, C.

2008-01-01

High-precision Penning trap mass measurements on the stable nuclide $^{27}$Al as well as on the short-lived radionuclides $^{26}$Al and $^{38,39}$Ca have been performed by use of radio-frequency excitation with time-separated oscillatory fields, i.e. Ramsey's method, as recently introduced for the excitation of the ion motion in a Penning trap, was applied. A comparison with the conventional method of a single continuous excitation demonstrates its advantage of up to ten times shorter measurements. The new mass values of $^{26,27}$Al clarify conflicting data in this specific mass region. In addition, the resulting mass values of the superallowed $\\beta$-emitter $^{38}$Ca as well as of the groundstate of the $\\beta$-emitter $^{26}$Al$^{m}$ confirm previous measurements and corresponding theoretical corrections of the ft-values.

Phase evolution during early stages of mechanical alloying of Cu–13 wt.% Al powder mixtures in a high-energy ball mill

International Nuclear Information System (INIS)

Dudina, Dina V.; Lomovsky, Oleg I.; Valeev, Konstantin R.; Tikhov, Serguey F.; Boldyreva, Natalya N.; Salanov, Aleksey N.; Cherepanova, Svetlana V.; Zaikovskii, Vladimir I.; Andreev, Andrey S.; Lapina, Olga B.; Sadykov, Vladislav A.

2015-01-01

Highlights: • Phase formation during early stages of Cu–Al mechanical alloying was studied. • The products of mechanical alloying are of highly non-equilibrium character. • X-ray amorphous phases are present in the products of mechanical alloying. • An Al-rich X-ray amorphous phase is distributed between the crystallites. - Abstract: We report the phase and microstructure evolution of the Cu–13 wt.% Al mixture during treatment in a high-energy planetary ball mill with a particular focus on the early stages of mechanical alloying. Several characterization techniques, including X-ray diffraction phase analysis, nuclear magnetic resonance spectroscopy, differential dissolution, thermal analysis, and electron microscopy/elemental analysis, have been combined to study the evolution of the phase composition of the mechanically alloyed powders and describe the microstructure of the multi-phase products of mechanical alloying at different length scales. The following reaction sequence has been confirmed: Cu + Al → CuAl 2 (+Cu) → Cu 9 Al 4 + (Cu) → Cu(Al). The phase evolution was accompanied by the microstructure changes, the layered structure of the powder agglomerates disappearing with milling time. This scheme is further complicated by the processes of copper oxidation, reduction of copper oxides by metallic aluminum, and by variation of the stoichiometry of Cu(Al) solid solutions with milling time. Substantial amounts of X-ray amorphous phases were detected as well. Differential dissolution technique has revealed that a high content of aluminum in the Cu(Al) solid solution-based powders is due to the presence of Al-rich phases distributed between the Cu(Al) crystallites

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Directory of Open Access Journals (Sweden)

Tao Li

2015-05-01

Full Text Available The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be studied. In this study, multilayer MoS2 field-effect transistors (FETs with a back-gated configuration were fabricated on high-κ Al2O3 coated Si substrates. Compared with MoS2 FETs on SiO2, the field-effect mobility (μFE and subthreshold swing (SS were remarkably improved in MoS2/Al2O3/Si. The improved μFE was thought to result from the dielectric screening effect from high-κ Al2O3. When a HfO2 passivation layer was introduced on the top of MoS2/Al2O3/Si, the field-effect mobility was further enhanced, which was thought to be concerned with the decreased contact resistance between the metal and MoS2. Meanwhile, the interface trap density increased from 2.4×1012 eV−1cm−2 to 6.3×1012 eV−1cm−2. The increase of the off-state current and the negative shift of the threshold voltage may be related to the increase of interface traps.

Derivation of Apollo 14 High-Al Basalts at Discrete Times: Rb-Sr Isotopic Constraints

Science.gov (United States)

Hui, H.; Neal, C. R.; Shih, C.-Y.; Nyquist, L. E.

2012-03-01

Four eruption episodes were identified for A-14 high-Al basalts. Rb-Sr isotopic data and ITE ratios show that their parental melt compositions of are correlated through mixing of evolved components with a relatively primitive magma ocean cumulate.

Innovative application of ionic liquid to separate Al and cathode materials from spent high-power lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xianlai; Li, Jinhui, E-mail: jinhui@tsinghua.edu.cn

2014-04-01

Highlights: • Manual dismantling is superior in spent high-power LiBs recycling. • Heated ionic liquid can effectively separate Al and cathode materials. • Fourier’s law was adopted to determine the heat transfer mechanism. • The process of spent LiBs recycling with heated ionic liquid dismantling was proposed. - Abstract: Because of the increasing number of electric vehicles, there is an urgent need for effective recycling technologies to recapture the significant amount of valuable metals contained in spent lithium-ion batteries (LiBs). Previous studies have indicated, however, that Al and cathode materials were quite difficult to separate due to the strong binding force supplied by the polyvinylidene fluoride (PVDF), which was employed to bind cathode materials and Al foil. This research devoted to seek a new method of melting the PVDF binder with heated ionic liquid (IL) to separate Al foil and cathode materials from the spent high-power LiBs. Theoretical analysis based on Fourier’s law was adopted to determine the heat transfer mechanism of cathode material and to examine the relationship between heating temperature and retention time. All the experimental and theoretic results show that peel-off rate of cathode materials from Al foil could reach 99% when major process parameters were controlled at 180 °C heating temperature, 300 rpm agitator rotation, and 25 min retention time. The results further imply that the application of IL for recycling Al foil and cathode materials from spent high-power LiBs is highly efficient, regardless of the application source of the LiBs or the types of cathode material. This study endeavors to make a contribution to an environmentally sound and economically viable solution to the challenge of spent LiB recycling.

/Cu-Al System

Science.gov (United States)

Kish, Orel; Froumin, Natalya; Aizenshtein, Michael; Frage, Nachum

2014-05-01

Wettability and interfacial interaction of the Ta2O5/Cu-Al system were studied. Pure Cu does not wet the Ta2O5 substrate, and improved spreading is achieved when relatively a high fraction of the active element (~40 at.% Al) was added. The Al2O3 and AlTaO4 phases were observed at the Ta2O5/Cu-Al interface. A thermodynamic evaluation allowed us to suggest that the lack of wetting bellow 40 at.% Al is due to the presence of a native oxide, which covers the drop. The conditions of the native oxide decomposition and the formation of the volatile Al2O suboxide strongly depend on the vacuum level during sessile drop experiments and the composition of the Cu-Al alloy. In our case, Al contents greater than 40% provides thermodynamic conditions for the formation of Al2O (as a result of Al reaction with Al2O3) and the drop spreading. It was suggested that the final contact angle in the Ta2O5/Cu-Al system (50°) is determined by Ta adsorption on the newly formed alumina interlayer.

Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

International Nuclear Information System (INIS)

Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

2012-01-01

The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

Sintering Behavior of CNT Reinforced Al6061 and Al2124 Nanocomposites

Directory of Open Access Journals (Sweden)

Nouari Saheb

2014-01-01

Full Text Available Ball milling and spark plasma sintering were successfully used to produce carbon nanotube reinforced Al6061 and Al2124 nanocomposites which have potential applications in the fields of aerospace, automotive, electronics, and high precision instrumentation. Al2124 and Al6061 nanocomposite powders containing 0.5 to 2 wt.% CNTs prepared through sonication and wet ball milling were spark plasma sintered at 400, 450, and 500°C for 20 minutes under a pressure of 35 MPa. CNTs were better dispersed, and less agglomerated and had good adhesion to the matrix in composites containing 1 wt.% CNTs. The increase of CNT content to 2 wt.% led to the formation of CNT clusters which resulted in less uniform and homogenous composite powders. Almost full densification of Al6061 reinforced with CNTs was achieved at 500°C. Also, CNTs reinforced Al2124 nanocomposites reached very high densities at 500°C. Composites reinforced with 1 wt.% CNTs displayed better densification compared to composites containing 2 wt.% CNTs. The increase of CNTs content from 0.5 to 1 wt.% increased the hardness of the Al6061 and Al2124 alloys to maximum values. Further increase of CNTs content to 2 wt.% decreased the hardness to values lower than that of the monolithic alloys.

Effect of iron content on the structure and mechanical properties of Al25Ti25Ni25Cu25 and (AlTi)60-xNi20Cu20Fex (x=15, 20) high-entropy alloys

International Nuclear Information System (INIS)

Fazakas, É.; Zadorozhnyy, V.; Louzguine-Luzgin, D.V.

2015-01-01

Highlights: • Three new refractory alloys namely: Al 25 Ti 25 Ni 25 Cu 25 , Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 , were produced by induction-melting and casting. • This kind of alloys exhibits high resistance to annealing softening. • Most the alloys in the annealed state possess even higher Vickers microhardness than the as-cast alloys. • The Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 alloys annealed at 973 K show the highest compressive stress and ductility values. - Abstract: In this work, we investigated the microstructure and mechanical properties of Al 25 Ti 25 Ni 25 C u25 Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 high entropy alloys, produced by arc melting and casting in an inert atmosphere. The structure of these alloys was studied by X-ray diffractometry and scanning electron microscopy. The as-cast alloys were heat treated at 773, 973 and 1173 K for 1800 s to investigate the effects of aging on the plasticity, hardness and elastic properties. Compared to the conventional high-entropy alloys the Al 25 Ti 25 Ni 25 Cu 25 , Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 and Al 20 Ti 20 Ni 20 Cu 20 Fe 20 alloys are relatively hard and ductile. Being heat treated at 973 K the Al 22.5 Ti 22.5 Ni 20 Cu 20 Fe 15 alloy shows considerably high strength and relatively homogeneous deformation under compression. The plasticity, hardness and elastic properties of the studied alloys depend on the fraction and intrinsic properties of the constituent phases. Significant hardening effect by the annealing is found.

Mixed-ligand Al complex—a new approach for more high efficient OLEDs

International Nuclear Information System (INIS)

Petrova, Petia K.; Tomova, Reni L.; Stoycheva-Topalova, Rumiana T.; Kaloyanova, Stefka S.; Deligeorgiev, Todor G.

2012-01-01

The mixed-ligand Aluminum bis(8-hydroxyquinoline) acetylacetonate (Alq 2 Acac) complex was presented and its performance as electroluminescent and electron transporting layer for OLED was studied. The photophysical properties of the novel complex were investigated and compared with the properties of the parent Alq 3 . Highly efficient OLED based on the mixed-ligand Al complex was developed with two times higher luminescence and efficiency compared to the identical OLED based on the conventional Alq 3 The better performance of the devices make the novel Al complex a very promising material for OLEDs. - Highlights: ► A novel electroluminescent Alq 2 Acac complex is presented as material for OLED. ► Electroluminescent emission of Alq 2 Acac is very similar to that of commercial Alq 3 . ► Devices with Alq 2 Acac show better characteristics compared to those with Alq 3 .

Search for high entropy alloys in the X-NbTaTiZr systems (X = Al, Cr, V, Sn)

Energy Technology Data Exchange (ETDEWEB)

Poletti, Marco Gabriele, E-mail: marcogabriele.poletti@unito.it [Dipartimento di Chimica, Università di Torino, Via P. Giuria 7, 10125 Torino (Italy); Fiore, Gianluca [Dipartimento di Chimica, Università di Torino, Via P. Giuria 7, 10125 Torino (Italy); Szost, Blanka A. [Strategic and Emerging Technologies Team (TEC-TS), European Space Agency, ESTEC, 1 Keplerlaan, 2201 AZ Noordwijk (Netherlands); Battezzati, Livio [Dipartimento di Chimica, Università di Torino, Via P. Giuria 7, 10125 Torino (Italy)

2015-01-25

Highlights: • Composition of refractory high entropy alloys predicted. • Solid solutions found in VNbTaTiZr and AlNbTaTiZr. • Alloys containing Cr and Sn are multi-phased. - Abstract: High entropy alloys, i.e. solid solution phases, are sought in the X-NbTaTiZr equiatomic system where the X element was chosen as Al, Cr, V and Sn by applying recent criteria based on size and electronegativity mismatch of alloy components, number of itinerant and total valence electrons, and the temperature at which the free energy of mixing changes at the alloy composition. The alloys containing V and Al are mostly constituted by solid solutions in good agreement with prediction.

Comparison Between Nb3Al and Nb3Sn Strands and Cables for High Field Accelerator Magnets

Energy Technology Data Exchange (ETDEWEB)

Yamada, R.; Kikuchi, A.; Barzi, E.; Chlachidze, G.; Rusy, A.; Takeuchi, T.; Tartaglia, M.; Turrioni, D.; Velev, V.; Wake, M.; Zlobin, A.V.; /Fermilab

2010-01-01

The Nb{sub 3}Al small racetrack magnet, SR07, has been successfully built and tested to its short sample limit beyond 10 Tesla without any training. Thus the practical application of Nb{sub 3}Al strands for high field accelerator magnets is established. The characteristics of the representative F4 strand and cable, are compared with the typical Nb{sub 3}Sn strand and cable. It is represented by the OST high current RRP Nb{sub 3}Sn strand with 108/127 configuration. The effects of Rutherford cabling to both type strands are explained and the inherent problem of the Nb{sub 3}Sn strand is discussed. Also the test results of two representative small racetrack magnets are compared from the stand point of Ic values, and training. The maximum current density of the Nb{sub 3}Al strands is still smaller than that of the Nb{sub 3}Sn strands, but if we take into account of the stress-strain characteristics, Nb{sub 3}Al strands become somewhat favorable in some applications.

Synthesis and microstructure characterization of Ni-Cr-Co-Ti-V-Al high entropy alloy coating on Ti-6Al-4V substrate by laser surface alloying

International Nuclear Information System (INIS)

Cai, Zhaobing; Jin, Guo; Cui, Xiufang; Liu, Zhe; Zheng, Wei; Li, Yang; Wang, Liquan

2016-01-01

Ni-Cr-Co-Ti-V-Al high-entropy alloy coating on Ti-6Al-4V was synthesized by laser surface alloying. The coating is composed of a B2 matrix and (Co, Ni)Ti 2 compounds with few β-Ti phases. Focused ion beam technique was utilized to prepare TEM sample and TEM observations agree well with XRD and SEM results. The formation of HEA phases is due to high temperature and rapid cooling rate during laser surface alloying. The thermodynamic parameters, ΔH mix , ΔS mix and δ as well as Δχ, should be used to predict the formation of the BCC solid solution, but they are not the strict criteria. Especially when Δχ reaches a high value (≥ 10%), BCC HEA will be partially decomposed, leading to the formation of (Co, Ni)Ti 2 compound phases. - Highlights: •Preparing HEA coating on Ti-6Al-4V by laser surface alloying is successful. •The synthesized HEA coating mainly consists of BCC HEA and (Co, Ni)Ti 2 compounds. •FIB technology was used to prepare the sample for TEM analysis. • ΔH mix , ΔS mix and δ as well as Δχ, should be all used to predict the formation of solid solution.

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

International Nuclear Information System (INIS)

Capriotti, M.; Alexewicz, A.; Fleury, C.; Gavagnin, M.; Bethge, O.; Wanzenböck, H. D.; Bertagnolli, E.; Pogany, D.; Strasser, G.; Visalli, D.; Derluyn, J.

2014-01-01

Using a generalized extraction method, the fixed charge density N int at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V th of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N int is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V th  = +1 V. Fabrication of a gate stack with Al 2 O 3 as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al 2 O 3 interface

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

Science.gov (United States)

Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

2012-10-05

AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

Science.gov (United States)

Kim, Seongjun; Ahn, Kwang-Soon; Ryou, Jae-Hyun; Kim, Hyunsoo

2017-07-01

A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current ( I DS,max) of 700 mA/mm at a gate bias voltage ( V GS) of 0 V and a maximum transconductance ( g m,max) of 190 mS/mm at drain-source voltage ( V DS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that I DS,max and g m,max have weak temperature dependence with a power-law relation of T -0.5, owing to suppressed optical phonon scattering. The threshold voltage ( V th) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Science.gov (United States)

Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

2017-07-25

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

The high temperature synthesis of CsAlSiO 4-ANA, a new polymorph in the system Cs 2OAl 2O 3SiO 2. I. The end member of ANA type of zeolite framework

Science.gov (United States)

Dimitrijevic, R.; Dondur, V.; Petranovic, N.

1991-12-01

High temperature phase transformations of Cs + exchanged zeolites were investigated. Above 1000°C, CsX, CsY (FAU), and Cs, ZK-4 (LTA) frameworks recrystallized in a pollucite phase. A Cs + loaded mordenite recrystallized at 1300°C in the orthorhombic CsAlSi 5O 12 phase. A Cs + exchanged zeolite A at 960°C recrystallized in a mixture of two polymorphic CsAlSiO 4 phases having different (Al,Si)O 4 frameworks. The unstable orthorhombic CsAlSiO 4ABW phase has a topotactic transition at 1150°C into an ordered low CsAlSiO 4-ANA framework. Further calcination produces, at 1200°C, transformation of the low CsAlSiO 4-ANA phase to the more stable high CsAlSiO 4-ANA polymorph having cubic ( a 0 = 13.6595 (5) Å) symmetry and an ordered SiAl distribution. The crystal structure of high CsAlSiO 4ANA, a new polymorph in the system Cs 2OAl 2O 3SiO 2, was determined using X-ray Rietveld analyses and 29Si MAS NMR spectroscopy.

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Thermal Conductivity and High-Frequency Dielectric Properties of Pressureless Sintered SiC-AlN Multiphase Ceramics

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Jialin Gu

2018-06-01

Full Text Available SiC-AlN multiphase ceramics with 10 wt. %Y2O3-BaO-SiO2 additives were fabricated by pressureless sintering in a nitrogen atmosphere. The effects of SiC contents and sintering temperatures on the sinterability, microstructure, thermal conductivity and high-frequency dielectric properties were characterized. In addition to 6H-SiC and AlN, the samples also contained Y3Al5O12 and Y4Al2O9. SiC-AlN ceramics sintered with 50 wt. % SiC at 2173 K exhibited the best thermal diffusivity and thermal conductivity (26.21 mm2·s−1 and 61.02 W·m−1·K−1, respectively. The dielectric constant and dielectric loss of the sample sintered with 50 wt. % SiC and 2123 K were 33–37 and 0.4–0.5 at 12.4–18 GHz. The dielectric constant and dielectric loss of the samples decreased as the frequency of electromagnetic waves increased from 12.4–18 GHz. The dielectric thermal conductivity properties of the SiC-AlN samples are discussed.

AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2002-12-01

This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Some aspects of anelastic and microplastic creep of pure Al and two Al-alloys

Energy Technology Data Exchange (ETDEWEB)

Sgobba, S. (Lab. de Metallurgie Mecanique, Dept. des Materiaux, Ecole Polytechnique Federale de Lausanne (Switzerland)); Kuenzi, H.U. (Lab. de Metallurgie Mecanique, Dept. des Materiaux, Ecole Polytechnique Federale de Lausanne (Switzerland)); Ilschner, B. (Lab. de Metallurgie Mecanique, Dept. des Materiaux, Ecole Polytechnique Federale de Lausanne (Switzerland))

1993-11-01

Anelastic creep of pure Al, commercial Al-Cu and a binary Al-Cu alloy has been measured at room temperature by means of a high resolution laser interferometer. The irreversible component of the deformation was also quantified from measurements of the anelastic creep recovery. The dependence of the deformation-time curves on thermal treatment and cold work is analyzed. The mechanisms responsible for the room temperature anelastic creep are discussed. Materials loaded below their elastic limit can present either a pure anelastic behavior (commercial Al-Cu) or additional viscoelastic creep (pure Al, high purity Al-Cu). For commercial Al-Cu, the presence of an irreversible deformation appears to be mainly related to the state of the surface. A viscoelastic after effect has been measured for this alloy after a Cu-electroplating treatment. As a typical result for room temperature creep, the irreversible deformation depends logarithmically on load time. (orig.).

Some aspects of anelastic and microplastic creep of pure Al and two Al-alloys

International Nuclear Information System (INIS)

Sgobba, S.; Kuenzi, H.U.; Ilschner, B.

1993-01-01

Anelastic creep of pure Al, commercial Al-Cu and a binary Al-Cu alloy has been measured at room temperature by means of a high resolution laser interferometer. The irreversible component of the deformation was also quantified from measurements of the anelastic creep recovery. The dependence of the deformation-time curves on thermal treatment and cold work is analyzed. The mechanisms responsible for the room temperature anelastic creep are discussed. Materials loaded below their elastic limit can present either a pure anelastic behavior (commercial Al-Cu) or additional viscoelastic creep (pure Al, high purity Al-Cu). For commercial Al-Cu, the presence of an irreversible deformation appears to be mainly related to the state of the surface. A viscoelastic after effect has been measured for this alloy after a Cu-electroplating treatment. As a typical result for room temperature creep, the irreversible deformation depends logarithmically on load time. (orig.)

High-Cycle, Push–Pull Fatigue Fracture Behavior of High-C, Si–Al-Rich Nanostructured Bainite Steel

Science.gov (United States)

Zhao, Jing; Ji, Honghong

2017-01-01

The high-cycle, push–pull fatigue fracture behavior of high-C, Si–Al-rich nanostructured bainitic steel was studied through the measurement of fatigue limits, a morphology examination and phase composition analysis of the fatigue fracture surface, as well as fractography of the fatigue crack propagation. The results demonstrated that the push–pull fatigue limits at 107 cycles were estimated as 710–889 MPa, for the samples isothermally transformed at the temperature range of 220–260 °C through data extrapolation, measured under the maximum cycle number of 105. Both the interior inclusion and the sample surface constituted the fatigue crack origins. During the fatigue crack propagation, a high amount of secondary cracks were formed in almost parallel arrangements. The apparent plastic deformation occurred in the fracture surface layer, which induced approximately all retained austenite to transform into martensite. PMID:29286325

The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE

Science.gov (United States)

Yusoff, Mohd Zaki Mohd; Mahyuddin, Azzafeerah; Hassan, Zainuriah; Hassan, Haslan Abu; Abdullah, Mat Johar

2012-06-01

Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices. Consequently, the growth and physics of GaN-based materials have attracted remarkable scientific attention. In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN layers grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. It was found that the allowed Raman optical phonon mode of GaN, the E1 (high) is clearly visible, which is located at 570.74 cm-1. Photoluminscence (PL) spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.

High Temperature Deformation of Twin-Roll Cast Al-Mn-Based Alloys after Equal Channel Angular Pressing.

Science.gov (United States)

Málek, Přemysl; Šlapáková Poková, Michaela; Cieslar, Miroslav

2015-11-12

Twin roll cast Al-Mn- and Al-Mn-Zr-based alloys were subjected to four passes of equal channel angular pressing. The resulting grain size of 400 nm contributes to a significant strengthening at room temperature. This microstructure is not fully stable at elevated temperatures and recrystallization and vast grain growth occur at temperatures between 350 and 450 °C. The onset of these microstructure changes depends on chemical and phase composition. Better stability is observed in the Al-Mn-Zr-based alloy. High temperature tensile tests reveal that equal channel angular pressing results in a softening of all studied materials at high temperatures. This can be explained by an active role of grain boundaries in the deformation process. The maximum values of ductility and strain rate sensitivity parameter m found in the Al-Mn-Zr-based alloy are below the bottom limit of superplasticity (155%, m = 0.25). However, some features typical for superplastic behavior were observed-the strain rate dependence of the parameter m , the strengthening with increasing grain size, and the fracture by diffuse necking. Grain boundary sliding is believed to contribute partially to the overall strain in specimens where the grain size remained in the microcrystalline range.

Highly Oriented Growth of Catalytically Active Zeolite ZSM-5 Films with a Broad Range of Si/Al Ratios.

Science.gov (United States)

Fu, Donglong; Schmidt, Joel E; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M

2017-09-04

Highly b-oriented zeolite ZSM-5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al 3+ usually disrupts the orientation of zeolite films. Herein, using structure-directing agents with hydroxy groups, we demonstrate a new method to prepare highly b-oriented zeolite ZSM-5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro-(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X-ray diffraction, and show Al 3+ framework incorporation and illustrate the differences between misoriented and b-oriented films. The methanol-to-hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro-spectroscopy with on-line mass spectrometry, showing that the b-oriented zeolite ZSM-5 films are active and stable under realistic process conditions. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

Energy Technology Data Exchange (ETDEWEB)

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

International Nuclear Information System (INIS)

So, Hongyun; Senesky, Debbie G.

2016-01-01

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

So, Hongyun, E-mail: hyso@stanford.edu [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Senesky, Debbie G. [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2016-01-04

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

Tribological behaviour at high temperature of hard CrAlN coatings doped with Y or Zr

International Nuclear Information System (INIS)

Sánchez-López, J.C.; Contreras, A.; Domínguez-Meister, S.; García-Luis, A.; Brizuela, M.

2014-01-01

The tribological properties of CrAlN, CrAlYN and CrAlZrN coatings deposited by direct current reactive magnetron sputtering are studied by means of pin-on-disc experiments at room temperature, 300, 500 and 650 °C using alumina balls as counterparts. The influence of the metallic composition (Al, Y and Zr) on the friction, wear properties and oxidation resistance is studied by means of scanning electron microscopy, energy dispersive X-ray analysis and Raman analysis of the contact region after the friction tests. The results obtained allow us to classify the tribological behaviour of the CrAl(Y,Zr)N coatings into three groups according to the nature of the dopant and aluminium content. The sliding wear mechanism is characterized by the formation of an overcoat rich in chromium and aluminium oxides whose particular composition is determined by the initial chemical characteristics of the coating and the testing temperature. The fraction of Cr 2 O 3 becomes more significant as the Al content decreases and the temperature increases. The addition of Y, and particularly Zr, favours the preferential formation of Cr 2 O 3 versus CrO 2 leading to a reduction of friction and wear of the counterpart. Conversely, the tribological behaviour of pure CrAlN coatings is characterized by higher friction but lower film wear rates as a result of higher hardness and major presence of aluminium oxides on the coating surface. - Highlights: • Comparative tribological study at high temperature of CrAlN, CrAlYN and CrAlZrN films • Fraction of Cr 2 O 3 raises as the Al content decreases and the temperature increases. • Zr doping favours lower and steady friction coefficient due to higher Cr 2 O 3 formation. • Sliding wear mechanism becomes predominantly abrasive as the Al content increases. • Excellent tribological performance of CrAlN doped with low Y contents (≈ 2 at.%)

Characteristics of Cu–Al2O3 composites of various starting particle size obtained by high-energy milling

Directory of Open Access Journals (Sweden)

VIŠESLAVA RAJKOVIĆ

2009-05-01

Full Text Available The powder Cu– Al2O3 composites were produced by high-energy milling. Various combinations of particle size and mixtures and approximately constant amount of Al2O3 were used as the starting materials. These powders were separately milled in air for up to 20 h in a planetary ball mill. The copper matrix was reinforced by internal oxidation and mechanical alloying. During the milling, internal oxidation of pre-alloyed Cu-2 mass %-Al powder generated 3.7 mass % Al2O3 nano-sized particles finely dispersed in the copper matrix. The effect of different size of the starting copper and Al2O3 powder particles on the lattice parameter, lattice distortion and grain size, as well as on the size, morphology and microstructure of the Cu– Al2O3 composite powder particles was studied.

Metal-organic frameworks as potential shock absorbers: the case of the highly flexible MIL-53(Al).

Science.gov (United States)

Yot, Pascal G; Boudene, Zoubeyr; Macia, Jasmine; Granier, Dominique; Vanduyfhuys, Louis; Verstraelen, Toon; Van Speybroeck, Veronique; Devic, Thomas; Serre, Christian; Férey, Gérard; Stock, Norbert; Maurin, Guillaume

2014-08-28

The mechanical energy absorption ability of the highly flexible MIL-53(Al) MOF material was explored using a combination of experiments and molecular simulations. A pressure-induced transition between the large pore and the closed pore forms of this solid was revealed to be irreversible and associated with a relatively large energy absorption capacity. Both features make MIL-53(Al) the first potential MOF candidate for further use as a shock absorber.

Al2O3 adherence on CoCrAl alloys

International Nuclear Information System (INIS)

Kingsley, L.M.

1980-04-01

Adherence of protective oxides on NiCrAl and CoCrAl superalloys has been promoted by a dispersion of a highly oxygen reactive element or its oxide being produced within the protection system. Two aspects of this subject are investigated here: the use of Al 2 O 3 as both the dispersion and protective oxide; and the production of an HfO 2 dispersion while simultaneously aluminizing the alloy. It was found that an Al 2 O 3 dispersion will act to promote the adherence of an external scale of Al 2 O 3 to a degree comparable to previously tested dispersions and an HfO 2 dispersion comparable to that produced by a Rhines pack treatment is produced during aluminization

High Density Hydrogen Storage System Demonstration Using NaAlH4 Based Complex Compound Hydrides

Energy Technology Data Exchange (ETDEWEB)

Daniel A. Mosher; Xia Tang; Ronald J. Brown; Sarah Arsenault; Salvatore Saitta; Bruce L. Laube; Robert H. Dold; Donald L. Anton

2007-07-27

This final report describes the motivations, activities and results of the hydrogen storage independent project "High Density Hydrogen Storage System Demonstration Using NaAlH4 Based Complex Compound Hydrides" performed by the United Technologies Research Center under the Department of Energy Hydrogen Program, contract # DE-FC36-02AL67610. The objectives of the project were to identify and address the key systems technologies associated with applying complex hydride materials, particularly ones which differ from those for conventional metal hydride based storage. This involved the design, fabrication and testing of two prototype systems based on the hydrogen storage material NaAlH4. Safety testing, catalysis studies, heat exchanger optimization, reaction kinetics modeling, thermochemical finite element analysis, powder densification development and material neutralization were elements included in the effort.

Compact Process for the Preparation of Microfine Spherical High-Niobium-Containing TiAl Alloy Powders

Science.gov (United States)

Tong, J. B.; Lu, X.; Liu, C. C.; Wang, L. N.; Qu, X. H.

2015-03-01

High-Nb-containing TiAl alloys are a new generation of materials for high-temperature structural applications because of their superior high-temperature mechanical properties. The alloy powders can be widely used for additive manufacturing, thermal spraying, and powder metallurgy. Because of the difficulty of making microfine spherical alloy powders in quantity by conventional techniques, a compact method was proposed, which consisted of two-step ball milling of elemental powders and subsequent radio frequency (RF) argon plasma spheroidization. In comparison with conventional mechanical alloying techniques, the two-step milling process can be used to prepare alloy powders with uniform scale in a short milling time with no addition of process control agent. This makes the process effective and less contaminating. After RF argon plasma spheroidization, the powders produced exhibit good sphericity, and the number-average diameter is about 8.2 μm with a symmetric unimodal particle size distribution. The powders perform high composition homogeneity and contain predominately supersaturated α 2-Ti3Al phase. The oxygen and carbon contents of the spheroidized powder are 0.47% and 0.050%, respectively.

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Energy Technology Data Exchange (ETDEWEB)

Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-09-15

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

Thermomechanical Treatments on High Strength Al-Zn-Mg(-Cu) Alloys

National Research Council Canada - National Science Library

Di Russo, E; Conserva, M; Gatto, F

1974-01-01

An investigation was carried out to determine the metallurgical properties of Al-Zn-Mg and Al-Zn-Mg-Cu alloy products processed according to newly developed Final Thermomechanical Treatments (FTMT) of T-AHA type...

MgAl2O4 spinel refractory as containment liner for high-temperature alkali salt containing environments

Science.gov (United States)

Peascoe-Meisner, Roberta A [Knoxville, TN; Keiser, James R [Oak Ridge, TN; Hemric, James G [Knoxville, TN; Hubbard, Camden R [Oak Ridge, TN; Gorog, J Peter [Kent, WA; Gupta, Amul [Jamestown, NY

2008-10-21

A method includes containing a high-temperature alkali salt containing environment using a refractory containment liner containing MgAl.sub.2O.sub.4 spinel. A method, includes forming a refractory brick containing MgAl.sub.2O.sub.4 spinel having an exterior chill zone defined by substantially columnar crystallization and an interior zone defined by substantially equiaxed crystallization; and removing at least a portion of the exterior chill zone from the refractory brick containing MgAl.sub.2O.sub.4 spinel by scalping the refractory brick containing MgAl.sub.2O.sub.4 spinel to define at least one outer surface having an area of substantially equiaxed crystallization. A product of manufacture includes a refractory brick containing MgAl.sub.2O.sub.4 spinel including an interior zone defined by substantially equiaxed crystallization; and at least one outer surface having an area of substantially equiaxed crystallization.

Fluorescent metal-organic framework MIL-53(Al) for highly selective and sensitive detection of Fe3+ in aqueous solution.

Science.gov (United States)

Yang, Cheng-Xiong; Ren, Hu-Bo; Yan, Xiu-Ping

2013-08-06

Fluorescent metal-organic frameworks (MOFs) have received great attention in sensing application. Here, we report the exploration of fluorescent MIL-53(Al) for highly selective and sensitive detection of Fe(3+) in aqueous solution. The cation exchange between Fe(3+) and the framework metal ion Al(3+) in MIL-53(Al) led to the quenching of the fluorescence of MIL-53(Al) due to the transformation of strong-fluorescent MIL-53(Al) to weak-fluorescent MIL-53(Fe), allowing highly selective and sensitive detection of Fe(3+) in aqueous solution with a linear range of 3-200 μM and a detection limit of 0.9 μM. No interferences from 0.8 M Na(+); 0.35 M K(+); 11 mM Cu(2+); 10 mM Ni(2+); 6 mM Ca(2+), Pb(2+), and Al(3+); 5.5 mM Mn(2+); 5 mM Co(2+) and Cr(3+); 4 mM Hg(2+), Cd(2+), Zn(2+), and Mg(2+); 3 mM Fe(2+); 0.8 M Cl(-); 60 mM NO2(-) and NO3(-); 10 mM HPO4(2-), H2PO4(-), SO3(2-), SO4(2-), and HCOO(-); 8 mM CO3(2-), HCO3(-), and C2O4(2-); and 5 mM CH3COO(-) were found for the detection of 150 μM Fe(3+). The possible mechanism for the quenching effect of Fe(3+) on the fluorescence of MIL-53(Al) was elucidated by inductively coupled plasma-mass spectrometry, X-ray diffraction spectrometry, and Fourier transform infrared spectrometry. The specific cation exchange behavior between Fe(3+) and the framework Al(3+) along with the excellent stability of MIL-53(Al) allows highly selective and sensitive detection of Fe(3+) in aqueous solution. The developed method was applied to the determination of Fe(3+) in human urine samples with the quantitative spike recoveries from 98.2% to 106.2%.

Ultra-High Precision Half-Life Measurement for the Superallowed &+circ; Emitter ^26Al^m

Science.gov (United States)

Finlay, P.; Demand, G.; Garrett, P. E.; Leach, K. G.; Phillips, A. A.; Sumithrarachchi, C. S.; Svensson, C. E.; Triambak, S.; Grinyer, G. F.; Leslie, J. R.; Andreoiu, C.; Cross, D.; Austin, R. A. E.; Ball, G. C.; Bandyopadhyay, D.; Djongolov, M.; Ettenauer, S.; Hackman, G.; Pearson, C. J.; Williams, S. J.

2009-10-01

The calculated nuclear structure dependent correction for ^26Al^m (δC-δNS= 0.305(27)% [1]) is smaller by nearly a factor of two than the other twelve precision superallowed cases, making it an ideal case to pursue a reduction in the experimental errors contributing to the Ft value. An ultra-high precision half-life measurement for the superallowed &+circ; emitter ^26Al^m has been made at the Isotope Separator and Accelerator (ISAC) facility at TRIUMF in Vancouver, Canada. A beam of ˜10^5 ^26Al^m/s was delivered in October 2007 and its decay was observed using a 4π continuous gas flow proportional counter as part of an ongoing experimental program in superallowed Fermi β decay studies. With a statistical precision of ˜0.008%, the present work represents the single most precise measurement of any superallowed half-life to date. [4pt] [1] I.S. Towner and J.C. Hardy, Phys. Rev. C 79, 055502 (2009).

Thermal stability of multilayered Pt-Al2O3 nanocoatings for high temperature CSP systems

CSIR Research Space (South Africa)

Nuru, ZY

2015-10-01

Full Text Available B), 115-120 Thermal stability of multilayered Pt-Al2O3 nanocoatings for high temperature CSP systems Z.Y. Nuru a, b, *, L. Kotsedi a, b, C.J. Arendse c, D. Motaung d, B. Mwakikunga d, K. Roro d, e, M. Maaza a, b a UNESCO-UNISA Africa Chair... Pretoria, South Africa e R&D Core-Energy, Council for Scientific and Industrial Research, P O Box 395, 0001 Pretoria, South Africa Abstract This contribution reports on the effect of thermal annealing on sputtered Pt–Al(sub2)O(sub3) multilayered...

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-04-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

2014-01-01

Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

Innovative application of ionic liquid to separate Al and cathode materials from spent high-power lithium-ion batteries.

Science.gov (United States)

Zeng, Xianlai; Li, Jinhui

2014-04-30

Because of the increasing number of electric vehicles, there is an urgent need for effective recycling technologies to recapture the significant amount of valuable metals contained in spent lithium-ion batteries (LiBs). Previous studies have indicated, however, that Al and cathode materials were quite difficult to separate due to the strong binding force supplied by the polyvinylidene fluoride (PVDF), which was employed to bind cathode materials and Al foil. This research devoted to seek a new method of melting the PVDF binder with heated ionic liquid (IL) to separate Al foil and cathode materials from the spent high-power LiBs. Theoretical analysis based on Fourier's law was adopted to determine the heat transfer mechanism of cathode material and to examine the relationship between heating temperature and retention time. All the experimental and theoretic results show that peel-off rate of cathode materials from Al foil could reach 99% when major process parameters were controlled at 180°C heating temperature, 300 rpm agitator rotation, and 25 min retention time. The results further imply that the application of IL for recycling Al foil and cathode materials from spent high-power LiBs is highly efficient, regardless of the application source of the LiBs or the types of cathode material. This study endeavors to make a contribution to an environmentally sound and economically viable solution to the challenge of spent LiB recycling. Copyright © 2014 Elsevier B.V. All rights reserved.

Effects of MnO-Al2O3 on the grain growth and high-temperature deformation strain of UO2 fuel pellets

International Nuclear Information System (INIS)

Kang, Ki Won; Yang, Jae Ho; Kim, Jong Hun; Rhee, Young Woo; Kim, Dong Joo; Kim, Keon Sik; Song, Kun Woo

2010-01-01

The fabrication and high-temperature deformation strain of MnO-Al 2 O 3 -doped UO 2 pellets were studied. The effects of additive composition and amount on the microstructure evolution of a UO 2 pellet were investigated. The compressive creep behaviors of MnO-Al 2 O 3 -doped UO 2 pellets were examined. The results indicated that a MnO-Al 2 O 3 binary additive can effectively promote the grain growth of UO 2 pellets. In addition, the high-temperature deformation strain of the UO 2 pellet can be improved significantly with 1,000 ppm 95MnO-5Al 2 O 3 (mol%). The developed MnO-Al 2 O 3 -additive-containing UO 2 pellets can be a potential candidate for a high-burn-up fuel and a pellet-cladding interaction (PCI) remedy. (author)

High temperature mechanical behaviour of glass-ceramics in the YSiAlON and ErSiAlON systems

Energy Technology Data Exchange (ETDEWEB)

Bondanini, A.; Massouras, G.; Besson, J.L. [ENSCI, Limoges (France). SPCTS

2002-07-01

The high temperature mechanical behaviour of oxynitride glass-ceramics in the YSiAlON and ErSiAlON systems was studied in the 950-1150 C temperature range under compressive stresses ranging from 20 to 100 MPa. The parent glass had a composition of 35 Y(or Er)-45 Si-20 Al-83 O-17 N in equivalent percent. Starting from these glasses, glass-ceramics were prepared using a two stage heat treatment: nucleation at the optimum nucleation temperature followed by crystal growth at 1050, 1150 or 1250 C. The two parent glasses had similar viscosities, with that of the Er-glass being slightly less than that of the Y-glass. After the devitrification treatment at 1050 C, B-phase (M{sub 2}SiAlO{sub 5}N) was the only crystalline phase formed in both systems. The creep behaviour was similar for the yttrium and the erbium materials. It was characterised by a long transient stage, due to the viscoelastic response of the residual glass, with recovered strain after unloading decreasing as loading time increased. The creep resistance was compared to that of the parent glasses in terms of apparent viscosity. The crystallisation of 75% of the glass resulted in an increase in viscosity such that a temperature some 100 C higher showed the same viscosity value. After heat treatment at 1150 C, the phase assemblage in the yttrium material changed with the formation of wollastonite and partial conversion of B-phase into Iw-phase. The apparent viscosity was 2 orders of magnitude higher than that of the samples heat treated at 1050 C and no strain recovery was observed upon unloading. In contrast, the erbium materials retained the same microstructure as after the heat treatment at 1050{sup b}C and there was no difference in the creep behaviour of the samples heat treated at 1050 or 1150 C. After a crystallisation treatment at 1250 C of the yttrium parent glass, the glass-ceramic consisted of yttrium aluminium garnet, N-apatite and {beta}-Y{sub 2}Si{sub 2}O{sub 7} and showed excellent creep

Niobium Carbide-Reinforced Al Matrix Composites Produced by High-Energy Ball Milling

Science.gov (United States)

Travessa, Dilermando Nagle; Silva, Marina Judice; Cardoso, Kátia Regina

2017-06-01

Aluminum and its alloys are key materials for the transportation industry as they contribute to the development of lightweight structures. The dispersion of hard ceramic particles in the Al soft matrix can lead to a substantial strengthening effect, resulting in composite materials exhibiting interesting mechanical properties and inspiring their technological use in sectors like the automotive and aerospace industries. Powder metallurgy techniques are attractive to design metal matrix composites, achieving a homogeneous distribution of the reinforcement into the metal matrix. In this work, pure aluminum has been reinforced with particles of niobium carbide (NbC), an extremely hard and stable refractory ceramic. Its use as a reinforcing phase in metal matrix composites has not been deeply explored. Composite powders produced after different milling times, with 10 and 20 vol pct of NbC were produced by high-energy ball milling and characterized by scanning electron microscopy and by X-ray diffraction to establish a relationship between the milling time and size, morphology, and distribution of the particles in the composite powder. Subsequently, an Al/10 pct NbC composite powder was hot extruded into cylindrical bars. The strength of the obtained composite bars is comparable to the commercial high-strength, aeronautical-grade aluminum alloys.

Tribological properties of thermally sprayed TiAl-Al2O3 composite coating

Science.gov (United States)

Salman, A.; Gabbitas, B.; Li, J.; Zhang, D.

2009-08-01

The use of thermal spray coatings provides protection to the surfaces operating in severe environments. The main goal of the current work is to investigate the possibility of using a high velocity oxy fuel (HVOF) thermally sprayed wear resistant TiAl/Al2O3 coating on tool steel (H13) which is used for making dies for aluminium high pressure die casting. A feedstock of TiAl/Al2O3 composite powder was produced from a mixture of Al and TiO2 powders by high energy mechanical milling, followed by a thermal reaction process. The feedstock was then thermally sprayed using a high velocity oxy-fuel (HVOF) technique onto H13 steel substrates to produce a composite coating. The present study describes and compares the tribological properties such as friction and sliding wear rate of the coating both at room and high temperature (700°C). The results showed that the composite coating has lower wear rate at high temperature (700°C) than the uncoated H13 sample. At Room temperature without using lubricant there is no much significant difference between the wear rate of the coated and uncoated samples. The experimental results showed that the composite coating has great potential for high temperature application due to its lower wear rate at high temperature in comparison with the uncoated sample at the same temperature. The composite coating was characterized using scanning electron microscopy (SEM), optical microscopy and X-ray diffractometry (XRD). This paper reports the experimental observations and discusses the wear resistance performance of the coatings at room and high temperatures.

Tribological properties of thermally sprayed TiAl-Al2O3 composite coating

International Nuclear Information System (INIS)

Salman, A; Gabbitas, B; Zhang, D; Li, J

2009-01-01

The use of thermal spray coatings provides protection to the surfaces operating in severe environments. The main goal of the current work is to investigate the possibility of using a high velocity oxy fuel (HVOF) thermally sprayed wear resistant TiAl/Al 2 O 3 coating on tool steel (H13) which is used for making dies for aluminium high pressure die casting. A feedstock of TiAl/Al 2 O 3 composite powder was produced from a mixture of Al and TiO 2 powders by high energy mechanical milling, followed by a thermal reaction process. The feedstock was then thermally sprayed using a high velocity oxy-fuel (HVOF) technique onto H13 steel substrates to produce a composite coating. The present study describes and compares the tribological properties such as friction and sliding wear rate of the coating both at room and high temperature (700 deg. C). The results showed that the composite coating has lower wear rate at high temperature (700deg. C) than the uncoated H13 sample. At Room temperature without using lubricant there is no much significant difference between the wear rate of the coated and uncoated samples. The experimental results showed that the composite coating has great potential for high temperature application due to its lower wear rate at high temperature in comparison with the uncoated sample at the same temperature. The composite coating was characterized using scanning electron microscopy (SEM), optical microscopy and X-ray diffractometry (XRD). This paper reports the experimental observations and discusses the wear resistance performance of the coatings at room and high temperatures.

High strain rate tensile behavior of Al-4.8Cu-1.2Mg alloy

International Nuclear Information System (INIS)

Bobbili, Ravindranadh; Paman, Ashish; Madhu, V.

2016-01-01

The purpose of the current study is to perform quasi static and high strain rate tensile tests on Al-4.8Cu-1.2Mg alloy under different strain rates ranging from 0.01–3500/s and also at temperatures of 25,100, 200 and 300 °C. The combined effect of strain rate, temperature and stress triaxiality on the material behavior is studied by testing both smooth and notched specimens. Johnson–Cook (J–C) constitutive and fracture models are established based on high strain rate tensile data obtained from Split hopkinson tension bar (SHTB) and quasi-static tests. By modifying the strain hardening and strain rate hardening terms in the Johnson–Cook (J–C) constitutive model, a new J–C constitutive model of Al-4.8Cu-1.2Mg alloy was obtained. The improved Johnson–Cook constitutive model matched the experiment results very well. With the Johnson–Cook constitutive and fracture models, numerical simulations of tensile tests at different conditions for Al-4.8Cu-1.2Mg alloy were conducted. Numerical simulations are performed using a non-linear explicit finite element code autodyn. Good agreement is obtained between the numerical simulation results and the experiment results. The fracture surfaces of specimens tested under various strain rates and temperatures were studied under scanning electron microscopy (SEM).

Stability of the composites: NiAl - cellular high-melting point metal

International Nuclear Information System (INIS)

Belomyttsev, M.Yu.; Kozlov, D.A.

2006-01-01

For sintered composite materials (CM) NiAl-W and NiAl-W-Mo the structure and mechanical properties are studied. A comparative analysis of the effect of hot deformation by compression at 1000-1300 Deg C on the integrity of microsamples themselves and tungsten shells of NiAl granules in CM with a cellular structure is accomplished. Local chemical composition of a NiAl/refractory metal interface in CM with cellular structure and free of it is determined. A CM structural state effect on compression yield strength at 1000 Deg C is estimated. The treatment is proposed which permits approaching cellular structured CM oxidation resistance at 1000-1100 Deg C to the level of heat stability of unalloyed NiAl or its alloy with Hf [ru

Three-dimensional rigid multiphase networks providing high-temperature strength to cast AlSi10Cu5Ni1-2 piston alloys

International Nuclear Information System (INIS)

Asghar, Z.; Requena, G.; Boller, E.

2011-01-01

The three-dimensional (3-D) architecture of rigid multiphase networks present in AlSi10Cu5Ni1 and AlSi10Cu5Ni2 piston alloys in as-cast condition and after 4 h spheroidization treatment is characterized by synchrotron tomography in terms of the volume fraction of rigid phases, interconnectivity, contiguity and morphology. The architecture of both alloys consists of α-Al matrix and a rigid long-range 3-D network of Al 7 Cu 4 Ni, Al 4 Cu 2 Mg 8 Si 7 , Al 2 Cu, Al 15 Si 2 (FeMn) 3 and AlSiFeNiCu aluminides and Si. The investigated architectural parameters of both alloys studied are correlated with room-temperature and high-temperature (300 deg. C) strengths as a function of solution treatment time. The AlSi10Cu5Ni1 and AlSi10Cu5Ni2 alloys behave like metal matrix composites with 16 and 20 vol.% reinforcement, respectively. Both alloys have similar strengths in the as-cast condition, but the AlSi10Cu5Ni2 is able to retain ∼15% higher high temperature strength than the AlSi10Cu5Ni1 alloy after more than 4 h of spheroidization treatment. This is due to the preservation of the 3-D interconnectivity and the morphology of the rigid network, which is governed by the higher degree of contiguity between aluminides and Si.

High-Cycle, Push–Pull Fatigue Fracture Behavior of High-C, Si–Al-Rich Nanostructured Bainite Steel

Directory of Open Access Journals (Sweden)

Jing Zhao

2017-12-01

Full Text Available The high-cycle, push–pull fatigue fracture behavior of high-C, Si–Al-rich nanostructured bainitic steel was studied through the measurement of fatigue limits, a morphology examination and phase composition analysis of the fatigue fracture surface, as well as fractography of the fatigue crack propagation. The results demonstrated that the push–pull fatigue limits at 107 cycles were estimated as 710–889 MPa, for the samples isothermally transformed at the temperature range of 220–260 °C through data extrapolation, measured under the maximum cycle number of 105. Both the interior inclusion and the sample surface constituted the fatigue crack origins. During the fatigue crack propagation, a high amount of secondary cracks were formed in almost parallel arrangements. The apparent plastic deformation occurred in the fracture surface layer, which induced approximately all retained austenite to transform into martensite.

Modeling of High Temperature Oxidation Behavior of FeCrAl Alloy by using Artificial Neural Network

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae Joon; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of)

2016-10-15

Refractory alloys are candidate materials for replacing current zirconium-base cladding of light water reactors and they retain significant creep resistance and mechanical strength at high temperatures up to 1500 ℃ due to their high melting temperature. Thermal neutron cross sections of refractory metals are higher than that of zirconium, however the loss of neutron can be overcome by reducing cladding thickness which can be facilitated with enhanced mechanical properties. However, most refractory metals show the poor oxidation resistance at a high temperature. Oxidation behaviors of the various compositions of FeCrAl alloys in high temperature conditions were modeled by using Bayesian neural network. The automatic relevance determination (ARD) technique represented the influence of the composition of alloying elements on the oxidation resistance of FeCrAl alloys. This model can be utilized to understand the tendency of oxidation behavior along the composition of each element and prove the applicability of neural network modeling for the development of new cladding material of light water reactors.

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

International Nuclear Information System (INIS)

Duan Bao-Xing; Yang Yin-Tang

2012-01-01

In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Engineering for high heat loads on ALS [Advanced Light Source] beamlines

International Nuclear Information System (INIS)

DiGennaro, R.; Swain, T.