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Sample records for hgi2 near-bandgap photoluminescence

  1. Low-temperature photoluminescence of detector-grade HgI2

    International Nuclear Information System (INIS)

    Merz, J.L.; Wu, Z.L.; van den Berg, L.; Schnepple, W.F.

    1981-01-01

    The low-temperature photoluminescence of HgI 2 is reported. Three main luminescence bands are observed, with peaks at approx. 2.30, 2.20, and 2.00 eV at 77 K. At 4.2 K, the highest energy peak shows considerable structure. The temperature dependence of these lines indicates both free and bound exciton recombination, and very small exciton binding energies (approx. 3 to 5 MeV) have been estimated. A comparison of the results of sublimation and doping experiments suggests that the lowest energy band may be related to impurities, whereas the middle-energy band is related to I content. The two strongest bound exciton lines comprising the high-energy band show systematic correlations with the middle-energy, I-related band. Further correlations between these spectral features and the performance of nuclear radiation detectors fabricated from these samples are also noted. The temperature coefficient of the band gap is estimated from the spectral shift of luminescence lines to be approximately -1.13 x 10 -4 eV/K between 32 K and 45 K

  2. Purification of HGI2 for nuclear detector fabrication

    International Nuclear Information System (INIS)

    Schieber, M.M.

    1978-01-01

    A process for purification of mercuric iodide (HgI 2 ) to be used as a source material for the growth of detector quality crystals. The high purity HgI 2 raw material is produced by a combination of three stages: synthesis of HgI 2 from Hg and I 2 , repeated sublimation, and zone refining

  3. Use of HgI2 as gamma radiation detector

    International Nuclear Information System (INIS)

    Perez Morales, J.M.

    1993-01-01

    The Mercuric Iodide (HgI 2 ) has become one of the most promising room temperature semiconductors for the construction of X and gamma radiation detectors. The classical methods of spectroscopy have not demonstrated to achieve optimum results with HgI 2 detectors, mainly due to its particular carrier transport properties. Several alternative spectroscopic methods developed in the last ten years are presented and commented, selecting for a complete study one of them: 'The Partial Charge Collection Method'. The transport properties of the carriers generated by the radiation in the detector is specially important for understanding the spectroscopic behaviour of the HgI 2 detectors. For a rigorous characterization of this transport, it has been studied a digital technique for the analysis of the electric pulses produced by the radiation. Theoretically, it has been developed a Monte Carlo simulation of the radiation detection and the electronic signal treatment processes with these detectors in the energy range of 60-1300 KeV. These codes are applied to the study of the The Partial Charge Collection Method and its comparison with gaussian methods. Experimentally, this digital techniques is used for the study of the transport properties of thin HgI 2 detectors. Special interest is given to the contribution of the slower carriers, the holes, obtaining some consequent of spectroscopic interest. Finally, it is presented the results obtained with the first detectors grown and mounted in CIEMAT with own technology. (author). 129 ref

  4. Beer Law Constants and Vapor Pressures of HgI2 over HgI2(s,l)

    Science.gov (United States)

    Su, Ching-Hua; Zhu, Shen; Ramachandran, N.; Burger, A.

    2002-01-01

    Optical absorption spectra of the vapor phase over HgI2(s,l) were measured at sample temperatures between 349 and 610 K for wavelengths between 200 and 600 nm. The spectra show the samples sublimed congruently into HGI2 without any observed Hg or I2 absorption spectra. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were derived. From these constants the vapor pressure of HgI2, P, was found to be a function of temperature for the liquid and the solid beta-phases: ln P(atm) = -7700/T(K) + 12.462 (liquid phase) and ln P(atm) = -10150/T(K) + 17.026 (beta-phase). The expressions match the enthalpies of vaporization and sublimation of 15.30 and 20.17 kcal/mole respectively, for the liquid and the beta-phase HgI2. The difference in the enthalpies gives an enthalpy of fusion of 4.87 kcal/mole, and the intersection of the two expressions gives a melting point of 537 K.

  5. Radiometric and dosimetric characteristics of HgI2 detectors

    International Nuclear Information System (INIS)

    Zaletin, V.M.; Krivozubov, O.V.; Torlin, M.A.; Fomin, V.I.

    1988-01-01

    The characteristics of HgI 2 detectors in x-ray and gamma detection in applications to radiometric and dosimetric monitoring and as portable instruments for such purposes was considered. Blocks with mosaic and sandwich structures were prepared and tested against each other and, for comparative purposes, against CdTe detectors for relative sensitivities at various gamma-quanta energies. Sensitivity dependencies on gamma radiation energy were plotted for the detector materials and structures as were current dependencies on the dose rate of x rays. Results indicated that the mercury iodide detectors could be used in radiometric and dosimetric measurements at gamma quantum energies up to and in excess of 1000 KeV

  6. HgI2 nanostructures obtained hydrothermally for application in ionizing radiation detection

    International Nuclear Information System (INIS)

    Pérez Barthaburu, María; Bentos Pereira, Heinkel; Fornaro, Laura; Galain, Isabel; Aguiar, Ivana

    2016-01-01

    The compound semiconductor HgI 2 has been widely studied and employed as a material for ionizing radiation detection. Monocrystal growth is an intricate method for obtaining materials for this application. With the aim of finding a simpler and more effective way to develop ionizing radiation detectors, we employed HgI 2 nanostructures subjected to a hydrothermal treatment and then pressed for this purpose. In the synthesis procedure, aqueous solutions of Hg(NO 3 ) 2 and NaI were mixed until their reaction completed and the suspension obtained was then placed in a homemade autoclave and heated at 120 °C for 2, 10 or 24 h. We confirmed the HgI 2 tetragonal phase by powder XRD in all cases, independently of the synthesis conditions employed. Nanoparticles were characterized by their size and morphology by TEM. We used the HgI 2 nanostructures to obtain a pellet by applying 0.7 GPa of pressure at room temperature. The pellet was then used to construct the detector, and we studied the electrical properties of the detector and its response to 241 Am sources of different exposure rates. The resistivity and signal-to-noise ratio obtained are of the order of those reported for HgI 2 detectors assembled with monocrystals. The results obtained in this work encourage us to work further on this topic, improving the method, scaling the detector’s size and studying its spectrometric grade. (paper)

  7. High energy proton-induced radioactivity in HgI2 crystals

    International Nuclear Information System (INIS)

    Porras, E.; Ferrero, J.L.; Sanchez, F.; Ruiz, J.A.; Lei, F.

    1995-01-01

    Mercuric iodide (HgI 2 ) semiconductor crystals are generating a lot of interest as room temperature solid state detectors for hard X-ray astronomy observations. For these applications one of the most important background sources is the cosmic proton induced radioactivity in the detector material. In order to study this background noise contribution a 1x1x1 cm HgI 2 crystal was irradiated with high energy protons. The resulting long-lived unstable isotopes and their production rates have been identified and compared with Monte Carlo simulations. ((orig.))

  8. Designing and making of a tool used for measurements by X fluorescence using HgI2 detectors

    International Nuclear Information System (INIS)

    Liu-Xu, X.

    1994-10-01

    A new measuring apparatus by X fluorescence based on a HgI 2 detector, operating at room temperature is presented. The principal properties of HgI 2 are outlined. A computer code designed for this apparatus is developed. Some experimental results are given to illustrate the performances of the device. (author). 67 refs., 117 figs., 7 tabs

  9. New thermal neutron solid-state electronic detector based on HgI2 crystals

    International Nuclear Information System (INIS)

    Melamud, M.; Burshtein, Z.

    1983-07-01

    We describe the development of a new solid-state electronic neutron detector, based on HgI 2 single crystals. Incident neutrons are absorbed in high neutron absorbing foils, such as cadmium or gadolinium, which are placed in front of a HgI 2 detector. Gamma rays, emitted as a result of the neutron absorbtion, are then absorbed in the HgI 2 , generating free charge carriers, which are collected by the electric field. The advantage of this system lies in it's manufacturing simplicity, low weight and small physical dimensions, compared to gas-filled conventional neutron detectors. The disadvantage is that the system does not discriminate between gamma rays and neutrons. A method to minimize this disadvantage is pointed out. It is as well possible to count neutrons by direct exposure of the HgI 2 to neutrons. The neutron-to-gamma transformation in that case takes place by the material nuclei themselves. This method, however, is impractical due to the interference of delayed radioactivity whose origin are 129 I nuclei. They are generated from 128 I by absorbing a neutron, and decay with a 25 min half lifetime involving gamma emissions. (author)

  10. Improved fabrication of HgI2 nuclear radiation detectors by machine-cleaving

    International Nuclear Information System (INIS)

    Levi, A.; Burger, A.; Schieber, M.; Vandenberg, L.; Yellon, W.B.; Alkire, R.W.

    1982-01-01

    The perfection of machine-cleaved sections from HgI 2 bulk crystals was examined. The perfection of the machine-cleaved sections as established by gamma diffraction rocking curves was found to be much better than the perfection of hand-cleaved sections or as grown thin platelets, reaching a perfection similar to that of the wire-sawn sections of HgI 2 . A correlation between the perfection and the thickness of the machine-cleaved section was also found, i.e., the thicker the cleaved-section the more perfect it is. The reproducibility of the fabrication was significantly improved by using machine cleaving in the process of fabrication. Large single crystals of HgI 2 weighing 20 to 200 g, can be grown from the vapor phase using the TOM Technique. In order to fabricate nuclear radiation detectors from these single crystals, thin sections of about 0.4 to 0.8 mm thickness have to be prepared. Up till now, the state-of-the-art of fabricating HgI 2 nuclear radiation detectors involved two methods to get thin sections from the large single crystals: (1) hand-cleaving using a razor-blade and (2) solution wire sawing. The chemical wire sawing method involves a loss of about 50% of the crystal volume and is usually followed by a chemical polishing process which involves a significant loss of volume of the original volume. This procedure is complicated and wasteful. The traditional fabrication method, i.e., hand-cleaving followed by rapid nonselective chemical etching, is simpler and less wasteful

  11. Influence of temperature upon dislocation mobility and elastic limit of single crystal HgI2

    International Nuclear Information System (INIS)

    Milstein, F.; Farber, B.; Kim, K.; van den Berg, L.; Schnepple, W.

    1982-01-01

    The practical importance of studying mechanical properties and dislocation structure of HgI 2 is reviewed briefly. Specifically, the performance of single crystal HgI 2 radiation detectors is evidently sensitive to crystalline imperfections; the dislocation structure, in turn, can be altered during detector fabrication, depending upon the mechanical properties of the crystal and the stresses to which the crystal is subjected. The influence of temperature upon dislocation mobility and plasticity in vapor-grown crystals of mercuric iodide is examined. Dislocation mobiity is determined by measuring the lengths of the longest arms of dislocation etch pit rosettes on (001) surfaces following microhardness indentation and chemical etch. Measurements were made in the range from room temperature to the phase transition temperature of 127 0 C. Dislocation mobility was found to be an increasing function of temperature, with the effect accelerating as the phase transition is approached. Increasing temperature was also found to lower the critical resolved shear stress for plastic deformation on slip on (001) planes. In these contexts, the vapor-grown crystals are clearly softer at their elevated growth temperatures. The results are discussed in terms of a dislocation model involving soft and hard glide dislocations

  12. Monocrystal growth and characterization of HgI2 semiconductor compound for using in X and gamma spectrometries

    International Nuclear Information System (INIS)

    Faria, L.O.

    1987-01-01

    Mercury Iodide (HgI 2 ) platelets were grown from the vapor phase in the presence of polymers. These platelets are convenient to be used as room temperature operating semiconductor radiation detectors. Experiments demonstrate that the growth of platelets depends on a two-stage mass transport instead of depending on just one, as it has been thought. HgI 2 platelets 30 mm 2 large and 90 μm thick were obtained in a sealed evacuated fused quartz tube and were characterized by etch pit density measurements. (author) [pt

  13. Growth and characterization of monocrystals from HgI2 semiconductor compound for using in X and gamma spectroscopy

    International Nuclear Information System (INIS)

    Faria, L.O. de.

    1987-09-01

    Mercury Iodide (HgI 2 ) platelets were grown from the vapor phase in the presence of polymers. These platelets are convenient to be used as room temperature operating semiconductor radiation detectors. Experiments demonstrate that the growth of platelets depends on a two-stage mass transport instead of depending on just one, as it has been thought. HgI 2 platelets 30 mm 2 large and 90 μm thick were obtained in a sealed evacuated fused quartz tube and were characterized by etch pit density measurements. (author)

  14. Correlations between plastic deformation parameters and radiation detector quality in HgI2

    International Nuclear Information System (INIS)

    Georgeson, G.; Milstein, F.; California Univ., Santa Barbara

    1989-01-01

    Mercuric iodide radiation detectors of various grades of quality were subjected to shearing forces in the (001) crystallographic planes using a specially designed micromechanical shear testing fixture. Experimental measurements were made of (001) shear stress versus shear strain. Each of the stress-strain curves was described by two empirically determined deformation parameters, s 0 and σ, where s 0 is a measure of 'bulk yielding' and σ indicates the 'sharpness of yielding' during plastic deformation. It was observed that the deformation parameters of many HgI 2 single crystal samples fit the relation s 0 =8σ 2/3 and that significant deviation from this relation, with s 0 >8σ 2/3 , indicates poor detector quality. Work hardening by prior plastic deformation was also found to cause s 0 to depart (in an increasing manner) from the 8σ 2/3 relation. For good quality material that has not previously been plastically deformed, the deformation parameter s c =s 0 -2σ<19 psi; this parameter can be interpreted as the 'onset of plastic yielding'. The results are discussed in terms of dislocation mechanisms for plastic deformation, work hardening, and recovery of work hardening. (orig.)

  15. Performance of room temperature mercuric iodide (HgI2) detectors in the ultra low energy x-ray region

    International Nuclear Information System (INIS)

    Dabrowski, A.J.; Iwanczyk, J.S.; Barton, J.B.; Huth, G.C.; Whited, R.; Ortale, C.; Economou, T.E.; Turkevich, A.L.

    1980-01-01

    Performance of room temperature mercuric iodide x-ray spectrometers has been recently improved through new fabrication techniques and further development of low noise associated electronic systems. This progress has extended the range of measurements to the ultra low energy x-ray region at room temperature. This paper reports the study of the effect of contact material on the performance of HgI 2 detectors in the low energy x-ray region

  16. A comparative study on surface morphology from the HgI2 semiconductors prepared by different techniques

    International Nuclear Information System (INIS)

    Martins, Joao F.T.; Ferraz, Caue de M.; Santos, Robinson A. dos; Mesquita, Carlos H. de; Hamada, Margarida M.

    2013-01-01

    The impurity effect in the surface morphology quality of HgI 2 crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detector. The crystals were purified and grown by two techniques: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulfoxide (DMSO) complexes. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. The best quality of surface morphology was found for the crystals purified and grown by the PVT technique. Significant decrease in the impurity concentration was found, purifying the crystal by means of two successive growths by the PVT technique, while a Si contamination in the HgI 2 crystal was observed, during its growth by the DMSO method. Thus, for DMSO technique was not possible to identify the peaks of the other trace elements present as impurities in the PVT crystal, due to the high intensity of the Si peak in the DMSO crystal. It was demonstrated the impurities affect significantly the surface morphology quality from the HgI 2 crystal. Key Words: Semiconductor crystal, Radiation detector, Mercury Iodide crystal, surface morphology. (author)

  17. Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    D' Costa, Vijay Richard, E-mail: vdcosta@asu.edu; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2016-08-14

    We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

  18. Field-portable high-resolution EDXRF analysis with HgI2-detector-based instrumentation

    International Nuclear Information System (INIS)

    Berry, P.F.; Little, S.R.; Voots, G.R.

    1992-01-01

    Energy dispersive x-ray fluorescence (EDXRF) analysis is well known for its efficient use of x-ray detector technology for simultaneous multielement determination. Low-intensity excitation, such as from a radioisotope source, can thus be employed and has enabled the design of many types of truly portable EDXRF instrumentation. Portable design, however, has not been without significant compromise in analytical performance because of the limited x-ray resolving power of prior detection methods, except by the use of a cryogenically operated detector. The developments we refer to stem from the use of a comparatively new x-ray detection device fabricated from mercuric iodide (HgI 2 ). For this detector, only a modest degree of cooling is required to achieve an energy resolution of > 300 eV. Two field-portable instrument designs of different hand-held measurement probe configurations are available that have applications for industrial quality assurance and environmental screening

  19. Analysis of HgI2 and PbI2 crystals and detectors by particle-induced x-ray emission (PIXE) and ion backscattering spectroscopy (IBS)

    International Nuclear Information System (INIS)

    Bench, G.S.; Heikkinen, D.W.; Antolak, A.J.; Morse, D.H.; Pontau, A.E.; James, R.B.; David, D.C.; Burger, A.; Van Den Berg, L.

    1993-03-01

    The Ion Micro-Analysis Group (IMAG) in Livermore conducts quantitative trace elemental analysis with PIXE and depth profiling with IBS using an MeV ion microbeam. The system has the capability to produce two-dimensional trace element and IBS images. PIXE analyses have been conducted on HgI 2 and PbI 2 crystals and detector materials in order to identify and quantify near surface trace contaminants. IBS measurements have been conducted to investigate elemental depth distributions in various materials. The results of measurements on several different samples are reported and a discussion of factors affecting quantitative in vacuo microanalysis of these materials is presented

  20. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  1. HgI2 detector fabrication

    International Nuclear Information System (INIS)

    Gonzalez, M.; Perez, J. M.

    1996-01-01

    The aim of the present work is to describe the steps followed to fabricate an ionizing radiation detector based on synthetic mercuric iodide monocrystal layers. Firstly, the crystalline orientation method has been describe, which is needed before the layer cutting perpendicularly to the (001) crystallographic. It is also defined the proceeding to crystal face finishing by a mechanical polishing and subsequent chemical etching. then, the metal electrode deposition and the view connection has been explained. Finally, the technique followed to encapsulate the detector with a polymeric thin film deposition has been described. (Author) 10 refs

  2. HgI2 detector fabrication

    International Nuclear Information System (INIS)

    Gonzalez, M.; Perez, J.M.

    1996-01-01

    The aim of the present work is to describe the steps followed to fabricate an ionizing radiation detector based on synthetic mercuric iodide monocrystal layers. Firstly, the crystalline orientation method has been describe, which is needed before the layer cutting perpendicullarly to the (001) crystallographyc. It is also defined the proceeding to crystal face finishing by a mechanical polishing and subsequent chemical etching. Then, the metal electrode deposition and the wire connection has been explained. Finally, the technique followed to encapsulate the detector with a polimeric thin film deposition has been described

  3. Photoluminescence of Diamondoid Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

    2012-04-03

    The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

  4. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  6. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  7. Photoluminescence of nanocrystals embedded in oxide matrices

    International Nuclear Information System (INIS)

    Estrada, C.; Gonzalez, J.A.; Kunold, A.; Reyes-Esqueda, J.A.; Pereyra, P.

    2006-12-01

    We used the theory of finite periodic systems to explain the photoluminescence spectra dependence on the average diameter of nanocrystals embedded in oxide matrices. Because of the broad matrix band gap, the photoluminescence response is basically determined by isolated nanocrystals and sequences of a few of them. With this model we were able to reproduce the shape and displacement of the experimentally observed photoluminescence spectra. (author)

  8. Synthesis and photoluminescence property of silicon carbide ...

    Indian Academy of Sciences (India)

    Administrator

    The β-SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of. 400 nm, which is significantly ... in the nanowires. Keywords. SiC nanowires; nanocrystalline diamond; crystal growth; photoluminescence. 1. ... unique mechanical, electrical and thermal properties. Due to the wide band gap ...

  9. Photoluminescent properties of single crystal diamond microneedles

    Science.gov (United States)

    Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

    2018-01-01

    Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

  10. Fabrication of radiation detectors with HgI2 crystals grown from a solution

    International Nuclear Information System (INIS)

    Friant, Alain; Mellet, Jean; Saliou, Charles; Mohammed Brahim, Tayeb.

    1979-01-01

    Mercuric Iodide crystals grown from a solution of molecular complexes with dimethylsulfoxide have been evaluated as γ-ray and X-ray room temperature detectors. Compared with materials grown from the vapor phase these crystals are characterized by a larger size, a lower level of native defects, but a higher impurity level. Detector technology, X-ray and γ-ray (up to 662 keV) detection properties and characterization measurements (T.S.C., photoconductivity, photovoltaic effect) are described. The effect of light on crystal properties is briefly discussed [fr

  11. Practical application of HgI2 detectors to a space-flight scanning electron microscope

    Science.gov (United States)

    Bradley, J. G.; Conley, J. M.; Albee, A. L.; Iwanczyk, J. S.; Dabrowski, A. J.

    1989-01-01

    Mercuric iodide X-ray detectors have been undergoing tests in a prototype scanning electron microscope system being developed for unmanned space flight. The detector program addresses the issues of geometric configuration in the SEM, compact packaging that includes separate thermoelectric coolers for the detector and FET, X-ray transparent hermetic encapsulation and electrical contacts, and a clean vacuum environment.

  12. Use of thick HgI2 detectors as intelligent spectrometers

    International Nuclear Information System (INIS)

    Olmos, P.; Garcia-Belmonte, G.; Perez, J.M.; Diaz, J.C.

    1990-01-01

    Mercuric iodide is a very attractive material to detect ionizing radiation due to its high stopping power and wide energy gap, which allows the use of a small and compact detector at room temperature. However, the spectroscopic performances of these detectors are poor in comparisons with other more popular semiconductors with better transport characteristics. This effect becomes dramatic when thick crystals are used. The partial charge-collection method is reported to be the most suitable one for enhancing the energy resolution achieved with thick detectors. A Monte Carlo simulation of the behavior of the model and its dependence with crystals and electronic parameters is presented, giving operating rules that optimize the system performance in each situation. Specially designed hardware has been developed to extract the maximum information of the charge pulse produced by photon-detector interaction, according with the results of the simulation. As a final step, an automatic isotope-identification process, based on the use of neutral networks, is performed, the identification being the true output of the whole system. Due to the strong dependence of this output on the free hardware parameters, an adaptive network is designed to act on these parameters in such a way that the system converges automatically to the best identification. (orig.)

  13. Photoluminescence, trap states and thermoluminescence decay ...

    Indian Academy of Sciences (India)

    Administrator

    Photoluminescence, trap states and thermoluminescence decay process study of Ca2MgSi2O7 : Eu. 2+. , Dy. 3+ phosphor. RAVI SHRIVASTAVA*, JAGJEET KAUR, VIKAS DUBEY and BEENA JAYKUMAR. Govt. VYT PG Autonomous College, Durg 491 001, (C.G.) India. MS received 9 July 2013; revised 5 December 2013.

  14. Microwave Assisted Synthesis and Photoluminescence Properties of ...

    Indian Academy of Sciences (India)

    46

    earth doping of ZnS would not lead to sufficiently bright PL materials. As a result, several new ... photoluminescence characteristics of ZnS nanoparticles doped with Pb2+. New luminescent ..... Papers, San Francisco, CA, USA, 249. [6] Tanaka ...

  15. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  16. Blue photoluminescent carbon nanodots from limeade

    Energy Technology Data Exchange (ETDEWEB)

    Suvarnaphaet, Phitsini [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Tiwary, Chandra Sekhar [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Wetcharungsri, Jutaphet; Porntheeraphat, Supanit [NECTEC, National Science and Technology Development Agency (NSTDA), Thailand Science Park, Pathumthani 12120 (Thailand); Hoonsawat, Rassmidara [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Ajayan, Pulickel Madhavapanicker [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Tang, I-Ming [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); Department of Material Science, Faculty of Science, Kasetsart University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Asanithi, Piyapong, E-mail: asanithi@hotmail.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand)

    2016-12-01

    Carbon-based photoluminescent nanodot has currently been one of the promising materials for various applications. The remaining challenges are the carbon sources and the simple synthetic processes that enhance the quantum yield, photostability and biocompatibility of the nanodots. In this work, the synthesis of blue photoluminescent carbon nanodots from limeade via a single-step hydrothermal carbonization process is presented. Lime carbon nanodot (L-CnD), whose the quantum yield exceeding 50% for the 490 nm emission in gram-scale amounts, has the structure of graphene core functionalized with the oxygen functional groups. The micron-sized flake of the as-prepared L-CnD powder exhibits multicolor emission depending on an excitation wavelength. The L-CnDs are demonstrated for rapidly ferric-ion (Fe{sup 3+}) detection in water compared to Fe{sup 2+}, Cu{sup 2+}, Co{sup 2+}, Zn{sup 2+}, Mn{sup 2+} and Ni{sup 2+} ions. The photoluminescence quenching of L-CnD solution under UV light is used to distinguish the Fe{sup 3+} ions from others by naked eyes as low concentration as 100 μM. Additionally, L-CnDs provide exceptional photostability and biocompatibility for imaging yeast cell morphology. Changes in morphology of living yeast cells, i.e. cell shape variation, and budding, can be observed in a minute-period until more than an hour without the photoluminescent intensity loss. - Highlights: • Photoluminescent carbon nanodots are synthesized from limeade. • The quantum yield of lime carbon nanodots is higher than 50%. • The lime carbon nanodots can be applied for detecting of Fe{sup 3+} ions and for imaging living yeast cells.

  17. Photoluminescence of Turkish purple jade (turkiyenite)

    International Nuclear Information System (INIS)

    Hatipoğlu, Murat; Başevirgen, Yasemin

    2012-01-01

    The purple-colored unique gem material is only found in the Harmancık (Bursa) region of the western Anatolia (Turkey). Therefore, it is specially called “Turkish purple jade or turkiyenite” on the worldwide gem market. Even though its jadeite implication is the principal constituent, the material cannot be considered as a single jadeite mineral since other implications are quartz, orthoclase, epidote, chloritoid and phlogopite minerals. Even if the analytical methods are used to characterize and identify the Turkish purple jade samples in detail, the luminescence spectra, especially photoluminescence features regarding to composite mineral implications of the material are important because of the existence the numerous characteristic broad and intensive luminescence bands in the samples. We can state that the UV-irradiation luminescence centers as photoluminescence (PL) are due to the overall signals in the Turkish purple jade samples. Accordingly, the distinctive photoluminescence peaks at 743, 717, 698, 484, 465 and 442 nm in PL-2D (counter diagram and sections) and PL-3D (sequence spectra) ranging between 300 and 900 nm of wavelengths, and between 220 and 340 K of temperatures are observed. Finally, photoluminescence features of the heterogeneous-structured material cannot be simply attributed to any chemical impurities, since the jade mass has numerous heterogeneous mineral constituents instead of a single jadeite mineral. Six different mineral implications and chemical impurities in the material composition display complex and individual all kind of luminescence features. Therefore, photoluminescence as well as radioluminescence, cathodoluminescence and thermoluminescence spectra provide positive identification regarding to the provenance (geographic origin) of the original Turkish purple jade (turkiyenite). - Highlights: ► The purple-colored gem material is only found in the Harmancık-Bursa region of Turkey. ► Material is called “Turkish purple

  18. Preparation and Photoluminescence of Tungsten Disulfide Monolayer

    Directory of Open Access Journals (Sweden)

    Yanfei Lv

    2018-05-01

    Full Text Available Tungsten disulfide (WS2 monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2.

  19. Photoluminescence lineshape of ZnO

    Directory of Open Access Journals (Sweden)

    Bruno Ullrich

    2014-12-01

    Full Text Available The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques.

  20. Photoluminescence of Er in SiOx

    International Nuclear Information System (INIS)

    Wan Jun; Sheng Chi; Lu Fang; Gong Dawei; Fan Yongliang; Lin Feng; Wang Xun

    1998-01-01

    Erbium-doped SiO x is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger spectroscopy. Photoluminescence (PL) peaks around the wave-length of 1.53 μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures ( 100 K)

  1. Photoluminescence study in diaminobenzene functionalized graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Abhisek, E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2014-10-15

    Being an excellent electronic material graphene is a very poor candidate for optoelectronic applications. One of the major strategies to develop the optical property in GO is the functionalization of graphene oxide (GO). In the present work GO sheets are functionalized by o-phenylenediamine to achieve diaminobenzene functionalized GO composite (DAB-GO). Formation of DAB-GO composite is further characterized by FTIR, UV, Raman studies. Excellent photoluminescence is observed in DAB-GO composite via passivation of the surface reactive sites by ring-opening amination of epoxides of GO.

  2. Gold Photoluminescence: Wavelength and Polarization Engineering

    DEFF Research Database (Denmark)

    Andersen, Sebastian Kim Hjælm; Pors, Anders Lambertus; Bozhevolnyi, Sergey I.

    2015-01-01

    We demonstrate engineering of the spectral content and polarization of photoluminescence (PL) from arrayed gold nanoparticles atop a subwavelength-thin dielectric spacer and optically-thick gold film, a configuration that supports gap-surface plasmon resonances (GSPRs). Choice of shapes...... and dimensions of gold nanoparticles influences the GSPR wavelength and polarization characteristics, thereby allowing us to enhance and spectrally mold the plasmon-assisted PL while simultaneously controlling its polarization. In order to understand the underlying physics behind the plasmon-enhanced PL, we...

  3. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  4. New organically templated photoluminescence iodocuprates(I)

    International Nuclear Information System (INIS)

    Hou Qin; Zhao Jinjing; Zhao Tianqi; Jin Juan; Yu Jiehui; Xu Jiqing

    2011-01-01

    Two types of organic cyclic aliphatic diamine molecules piperazine (pip) and 1,3-bis(4-piperidyl)propane (bpp) were used, respectively, to react with an inorganic mixture of CuI and KI in the acidic CH 3 OH solutions under the solvothermal conditions, generating finally three new organically templated iodocuprates as 2-D layered [(Hpip)Cu 3 I 4 ] 1, 1-D chained [tmpip][Cu 2 I 4 ] 2 (tmpip=N,N,N',N'-tetramethylpiperazinium) and dinuclear [H 2 bpp] 2 [Cu 2 I 5 ] I.2H 2 O 3. Note that the templating agent tmpip 2+ in compound 2 originated from the in situ N-alkylation reaction between the pip molecule and the methanol solvent. The photoluminescence analysis indicates that the title compounds emit the different lights: yellow for 1, blue for 2 and yellow-green for 3, respectively. - Graphical abstract: The solvothermal self-assemblies of CuI, KI and pip/bpp in acidic CH 3 OH solutions created three iodocuprates 2-D layered [(Hpip)Cu 3 I 4 ] 1, 1-D chained [tmpip][Cu 2 I 4 ] 2 and dinuclear [H 2 bpp] 2 [Cu 2 I 5 ] I.2H 2 O 3. Highlights: → A new layered iodocuprate(I) with 20-membered rings was hydrothermally prepared. → A simple approach to prepare the new organic templating agent was reported. → Photoluminescence analysis indicates the emission for iodocuprate(I) is associated with the Cu...Cu interactions.

  5. Multicolor photoluminescence in ITQ-16 zeolite film

    KAUST Repository

    Chen, Yanli

    2016-09-07

    Exploring the native defects of zeolites is highly important for understanding the properties of zeolites, such as catalysis and optics. Here, ITQ-16 films were prepared via the secondary growth method in the presence of Ge atoms. Various intrinsic defects of ITQ-16 films were fully studied through photoluminescence and FTIR characterizations. It was found that both the as-synthesized and calcined ITQ-16 films displayed multicolor photoluminescence including ultraviolet, blue, green and red emissions by exciting upon appropriate wavelengths. The results indicate that Si―OH and non-bridging oxygen hole centers(NBOHCs) are responsible for the origin of green and red emissions at 540―800 nm, while according to a variety of emission bands of calcined ITQ-16 film, blue emission bands at around 446 and 462 nm are attributed to peroxy free radicals(≡SiO2), ultraviolet emissions ranging from 250 nm to 450 nm are suggested originating from a singlet-to-triplet transition of two-fold-coordinated Si and Ge, respectively. © 2016, Jilin University, The Editorial Department of Chemical Research in Chinese Universities and Springer-Verlag GmbH.

  6. Influence of structural defects on excitonic photoluminescence of pentacene

    International Nuclear Information System (INIS)

    Piryatins'kij, Yu.P.; Kurik, M.V.

    2011-01-01

    The exciton reflection, absorption, and photoluminescence spectra for single crystals and polycrystalline films have been studied in the temperature range of 4.2-296 K. A significant influence of structural defects arising during phase transitions on the exciton spectra of pentacene has been detected. The mechanisms of photoluminescence in single crystals and crystalline films of pentacene have been considered.

  7. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  8. Modelling absorption and photoluminescence of TPD

    Energy Technology Data Exchange (ETDEWEB)

    Vragovic, Igor [Dpto. de Fisica Aplicada and Inst. Universitario de Materiales de Alicante, Universidad de Alicante, E-03080 Alicante (Spain)], E-mail: igor.vragovic@ua.es; Calzado, Eva M.; Diaz Garcia, Maria A.; Himcinschi, C. [Max-Planck-Institut fuer Mikrostrukturphysik, D-06120 Halle (Germany); Gisslen, L.; Scholz, R. [Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany)

    2008-05-15

    We analyse the optical spectra of N,N{sup '}-diphenyl-N,N{sup '}-bis(3-methyl-phenyl)-(1,1{sup '}-biphenyl)-4,4{sup '}-diamine (TPD) doped polystyrene films. The aim of the present paper is to give a microscopic interpretation of the significant Stokes shift between absorption and photoluminescence, which makes this material suitable for stimulated emission. The optimized geometric structures and energies of a neutral TPD monomer in ground and excited states are obtained by ab initio calculations using Hartree-Fock and density functional theory. The results indicate that the second distinct peak observed in absorption may arise either from a group of higher electronic transitions of the monomer or from the lowest optical transitions of a TPD dimer.

  9. Modelling absorption and photoluminescence of TPD

    International Nuclear Information System (INIS)

    Vragovic, Igor; Calzado, Eva M.; Diaz Garcia, Maria A.; Himcinschi, C.; Gisslen, L.; Scholz, R.

    2008-01-01

    We analyse the optical spectra of N,N ' -diphenyl-N,N ' -bis(3-methyl-phenyl)-(1,1 ' -biphenyl)-4,4 ' -diamine (TPD) doped polystyrene films. The aim of the present paper is to give a microscopic interpretation of the significant Stokes shift between absorption and photoluminescence, which makes this material suitable for stimulated emission. The optimized geometric structures and energies of a neutral TPD monomer in ground and excited states are obtained by ab initio calculations using Hartree-Fock and density functional theory. The results indicate that the second distinct peak observed in absorption may arise either from a group of higher electronic transitions of the monomer or from the lowest optical transitions of a TPD dimer

  10. Photoluminescence of self-organized perylene bisimide polymers

    NARCIS (Netherlands)

    Neuteboom, E.E.; Meskers, S.C.J.; Meijer, E.W.; Janssen, R.A.J.

    2004-01-01

    Three polymers consisting of alternating perylene bisimide chromophores and flexible polytetrahydrofuran segments of different length have been studied using absorption and (time-resolved) photoluminescence spectroscopy. In o-dichlorobenzene, the chromophores self organize to form H-like aggregates.

  11. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.; Kelarakis, Antonios; Giannelis, Emmanuel P.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives

  12. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives rise to the formation of well-defined nanoparticles. The carbogenic nanoparticles can be readily surface modified, generating a series of highly selective photoluminescent materials that exhibit remarkable stability upon prolonged exposure to aggressive, high-temperature, high-salinity environment. © 2012 The Royal Society of Chemistry.

  13. Photoluminescence of carbon dots from mesoporous silica

    Science.gov (United States)

    Nelson, D. K.; Razbirin, B. S.; Starukhin, A. N.; Eurov, D. A.; Kurdyukov, D. A.; Stovpiaga, E. Yu; Golubev, V. G.

    2016-09-01

    Photophysical properties of carbon dots were investigated under various excitation conditions and over a wide temperature region - from room to liquid helium temperatures. The carbon dots (CDs) were synthesized using mesoporous silica particles as a reactor and (3-aminopropyl)triethoxysilane (APTES) as a precursor. The photoluminescence spectra of CDs exhibit a strong dependence on the excitation wavelength and demonstrate a significant inhomogeneous broadening. Lowering sample temperature reveals the doublet structure of the spectra, which is associated with the vibronic structure of radiative transitions. The vibration energy ∼1200 cm-1 is close to the energy of Csbnd O stretching vibration. Long-lived phosphorescence of carbon dots with its decay time ∼0.2 s at T = 80 K was observed. The fluorescence and phosphorescence spectra are shown to be spectrally separated. The long-lived component of the emission was ascribed to optically forbidden triplet-singlet transitions. The value of the singlet-triplet splitting was found to be about 0.3 eV. Photo-induced polarization of the luminescence of carbon dots was revealed. The degree of the linear polarization is dependent on the wavelengths of both excitation and emitted light. The effect indicates a hidden anisotropy of optical dipole transitions in the dots and demonstrates the loss of the dipole orientation during the electron energy relaxation.

  14. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  15. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  16. Solvothermal tuning of photoluminescent graphene quantum dots: from preparation to photoluminescence mechanism

    Science.gov (United States)

    Qi, Bao-Ping; Zhang, Xiaoru; Shang, Bing-Bing; Xiang, Dongshan; Zhang, Shenghui

    2018-02-01

    Solvothermal synthesis was employed to tune the surface states of graphene quantum dots (GQDs). Two series of GQDs with the particle sizes from 2.6 to 4.5 nm were prepared as follows: (I) GQDs with the same size but different oxygen degrees; (II) GQDs with different core sizes but the similar surface chemistry. Both the large sizes and the high surface oxidation degrees led to the redshift photoluminescence (PL) of GQDs. Electrochemiluminescence (ECL) spectra from two series of GQDs were all in accordance with their PL spectra, respectively, which provided good evidence for the conjugated structures in GQDs responsible for PL. [Figure not available: see fulltext.

  17. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  18. Photoluminescent properties of complex metal oxide nanopowders for gas sensing

    Science.gov (United States)

    Bovhyra, R. V.; Mudry, S. I.; Popovych, D. I.; Savka, S. S.; Serednytski, A. S.; Venhryn, Yu. I.

    2018-03-01

    This work carried out research on the features of photoluminescence of the mixed and complex metal oxide nanopowders (ZnO/TiO2, ZnO/SnO2, Zn2SiO4) in vacuum and gaseous ambient. The nanopowders were obtained using pulsed laser reactive technology. The synthesized nanoparticles were characterized by X-ray diffractometry, energy-dispersive X-ray analysis, and scanning and transmission electron microscopy analysis for their sizes, shapes and collocation. The influence of gas environment on the photoluminescence intensity was investigated. A change of ambient gas composition leads to a rather significant change in the intensity of the photoluminescence spectrum and its deformation. The most significant changes in the photoluminescent spectrum were observed for mixed ZnO/TiO2 nanopowders. This obviously is the result of a redistribution of existing centers of luminescence and the appearance of new adsorption centers of luminescence on the surface of nanopowders. The investigated nanopowders can be effectively used as sensing materials for the construction of the multi-component photoluminescent sensing matrix.

  19. Effect of gamma irradiation on the photoluminescence of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru; Romanov, N. M. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Goryachev, D. N. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zakharova, I. B. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Sreseli, O. M. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2017-04-15

    The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.

  20. Fast neutron radiography using photoluminescent imaging plates

    International Nuclear Information System (INIS)

    Rant, J.; Kristof, E.; Balasko, M.; Stade, J.

    1999-01-01

    Fast neutron radiography (FNR) and resonance neutron radiography (RNR) are complementary to the conventional radiography with high energy gamma-rays or brems-strahlung radiation used for the inspection of thick metal objects. In both non-destructive methods, the contrast sensitivity and the penetration power can be improved by using higher energy neutrons. At present direct techniques based either n Solid State Nuclear Track detectors (SSNTDs) or scintillating screens and transfer techniques using activation threshold detectors and radiographic films are applied for the detection of fast neutron images. Rather low detection sensitivity of film and SSNTD based fast neutron imaging methods and also rather poor inherent image contrast of SSNTD pose a problem for FNR in the fast neutron energy region 1-15 MeV interesting for NDT. For more efficient detection of fast neutron images the use of novel highly sensitive photoluminescent imaging plates (IP) in combination with threshold at the KFKI research reactor. The conventional IP produced by FUJI Photo Film Co. for the detection of beta and X-ray radiation were used. The threshold activation detectors were the reactions 115 In(n, n') 115m In, 64 Zn(n,p) 64 Cu, 56 Fe(n, p) 56 Mn, 24 Mg(n, p) 24 Na and 27 Al(n, α) 24 Na. These threshold reactions cover the fast neutron energy region between 0,7 MeV and 12 MeV. Pure, commercially available metals 0,1 mm to 0,25 mm thick made of In, Zn, Fe, Mg and Al were used as converter screens. The very high sensitivity of IP, the linearity of their response over 5 decades of exposure dose and the high dynamic digitalisation latitude enabled fast neutron radiography of image quality comparable to the quality of thermal NR. In our experimental conditions (φ n ∼ 10 8 n/cm 2 s, R Cd ∼ 2) the neutron exposure and IP exposure periods were still practical and comparable to the half life of the corresponding reaction products (half an hour to several hours). Even with the 27 Al(n.α) 24

  1. Characterization of CdSe polycrystalline films by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Brasil, M.J.S.P.

    1985-01-01

    The characterization of CdSe polycristalline films were done by photoluminescence spectroscopy, X-ray diffraction analysis, diagrams IxV, and efficiency of solar energy conversion for cells done by these films. The experimental data shown strong temperature dependence of annealing, and the optimum temperature around 650 0 C was determined. The films did not present photoluminescence before heat treatment, but the annealed sample spectrum showed fine structures in the excitonic region, crystal phase transformation, enhancement of grain size, and better efficiency of the cell. Measurements of photoluminescence between 2 and 300 K, showed two bands of infrared emission, width and intense enough. The shape, at half-width, and the integrated intensity of one these bands were described by a configuration coordinate model for deep centers. Based on obtained results, some hypothesis about the origin of these bands and its correlation with efficiency of cells done with CdSe polycrystalline films, are proposed. (M.C.K.) [pt

  2. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  3. The nature of the photoluminescence in amorphized PZT

    International Nuclear Information System (INIS)

    Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

    2005-01-01

    The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

  4. Terahertz-field-induced photoluminescence of nanostructured gold films

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

    2013-01-01

    We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

  5. Microwave-assisted synthesis and photoluminescence properties of ...

    Indian Academy of Sciences (India)

    2017-11-11

    Nov 11, 2017 ... The photoluminescence property was studied by near-UV (nUV) excitation. The XRD .... spectrofluorimeter equipped with a 450-W Xenon lamp, in the range of .... nUV-excited RGB tricolour LED for production of white light.

  6. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  7. Optical properties and photoluminescence of tetrahexyl-sexithiophene allotropes

    NARCIS (Netherlands)

    Botta, C; Destri, S; Porzio, W; Bongiovanni, G; Loi, MA; Mura, A; Tubino, R

    2001-01-01

    The optical absorption, Raman scattering and photoluminescence of two phases of tetrahexyl-sexithiophene (4HT6) display properties coherently related to the different molecular conformations imposed by the chain packing. We analyse the temperature dependence of the optical properties of a sample in

  8. Tuning photoluminescence of ZnS nanoparticles by silver

    Indian Academy of Sciences (India)

    Wintec

    Ag@ZnS core-shell nanoparticles. ... doped ZnS NPs and thus changes the emission charac- teristics. We also ... Nanoparticles; photoluminescence; silver; zinc sulfide; doping. 1. ..... Sooklal K, Brain S, Angel M and Murphy C J 1996 J. Phys.

  9. Photoluminescence Enhancement in Formamidinium Lead Iodide Thin Films

    NARCIS (Netherlands)

    Fang, Hong-Hua; Wang, Feng; Adjokatse, Sampson; Zhao, Ni; Loi, Maria Antonietta

    2016-01-01

    Formamidinium lead iodide (FAPbI(3)) has a broader absorption spectrum and better thermal stability than the most famous methylammonium lead iodide, thus exhibiting great potential for photovoltaic applications. In this report, the light-induced photoluminescence (PL) evolution in FAPbI(3) thin

  10. Gold nanoparticles–gelatinhybrid fibers with bright photoluminescence

    DEFF Research Database (Denmark)

    Liu, Shuiping; Tan, Lianjiang; Li, Xiaoqiang

    2014-01-01

    acid and gave rise to in situ synthesis of GNPs in the spinning solutions. The GNPs–gelatin fibers were fabricated by electrospinning the spinning solutions. The GNPs were encapsulated in the fibers, which endowed the fibers photoluminescence (PL) characteristics. A variety of experiments were...

  11. Chemical Changes and photoluminescence properties of UV modified polypyrrole

    Czech Academy of Sciences Publication Activity Database

    Galář, P.; Dzurňák, B.; Malý, P.; Čermák, Jan; Kromka, Alexander; Omastová, M.; Rezek, Bohuslav

    2013-01-01

    Roč. 8, č. 1 (2013), s. 57-70 ISSN 1452-3981 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : photoluminescence * polypyrrole * monocrystalline diamond Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.956, year: 2013 http://www.electrochemsci.org/papers/vol8/80100057.pdf

  12. Photoluminescence studies of Li-doped Si nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Klimešová, Eva; Vacík, Jiří; Holý, V.; Pelant, Ivan

    2013-01-01

    Roč. 3, č. 14 (2013), s. 1-7 ISSN 1847-9804 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : Si nanocrystals * photoluminescence * doping * Li-ion batteries Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.949, year: 2013

  13. Photoluminescence of spray pyrolysis deposited ZnO nanorods

    Directory of Open Access Journals (Sweden)

    Mikli Valdek

    2011-01-01

    Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

  14. Unusual photoluminescence phenomena : New insights in Stokes and anti-Stokes emission

    NARCIS (Netherlands)

    de Jong, M.

    2017-01-01

    Photoluminescent materials are applied in many devices that we use in our daily lives. For example in fluorescent lamps and LED-lamps, photoluminescent materials convert the source light to create white light. Photoluminescent materials can also play a role in more complicated devices, as for

  15. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  16. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    Science.gov (United States)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  17. Rhodamine 6G impregnated porous silica: A photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Anedda, A. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy); Carbonaro, C.M. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy)]. E-mail: cm.carbonaro@dsf.unica.it; Clemente, F. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Corpino, R. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Ricci, P.C. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Rossini, S. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy)

    2005-12-15

    The optical properties of rhodamine 6G dye confined in porous silica are reported. Photoluminescence properties of embedded chromophores in mesoporous hosts can be affected by the surrounding matrices: shifts in emission spectra and variations of photoluminescence quantum yield are found as compared to dye solutions. Host-guest interactions are studied here by varying both SiO{sub 2} xerogels porosity and the dye concentration. Comparing samples obtained by impregnating matrices with 5.4 and 18.2 nm pores with solutions having concentrations in the rhodamine 6G high laser gain, matrices with 5.4 nm pores impregnated with a dye concentration of 5 x 10{sup -4} M are found to be the most stable and efficient in the examined range.

  18. UV-VIS and photoluminescence spectroscopy for nanomaterials characterization

    CERN Document Server

    2013-01-01

    Second volume of a 40-volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about UV-visible and photoluminescence spectroscopy for the characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume essential reading for research scientists in academia and industry in the related fields.

  19. Photoluminescent polysaccharide-coated germanium(IV) oxide nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Lobaz, Volodymyr; Rabyk, Mariia; Pánek, Jiří; Doris, E.; Nallet, F.; Štěpánek, Petr; Hrubý, Martin

    2016-01-01

    Roč. 294, č. 7 (2016), s. 1225-1235 ISSN 0303-402X R&D Projects: GA MŠk(CZ) 7AMB14FR027; GA ČR(CZ) GA13-08336S; GA MZd(CZ) NV15-25781A Institutional support: RVO:61389013 Keywords : germanium oxide nanoparticles * polysaccharide coating * photoluminescent label Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.723, year: 2016

  20. Power-law photoluminescence decay in quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2013-01-01

    Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

  1. Photoluminescence of monovalent indium centres in phosphate glass

    OpenAIRE

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

  2. Photoluminescence decay kinetics of doped ZnS nanophosphors

    International Nuclear Information System (INIS)

    Sharma, Rajesh; Bhatti, H S

    2007-01-01

    Doped nanophosphor samples of ZnS:Mn, ZnS:Mn, Co and ZnS:Mn, Fe were prepared using a chemical precipitation method. Photoluminescence (PL) spectra were obtained and lifetime studies of the nanophosphors were carried out at room temperature. To the best of our knowledge, there are very few reports on the photoluminescence investigations of Co-doped or Fe-doped ZnS:Mn nanoparticles in the literature. Furthermore, there is no report on luminescence lifetime shortening of ZnS:Mn nanoparticles doped with Co or Fe impurity. Experimental results showed that there is considerable change in the photoluminescence spectra of ZnS:Mn nanoparticles doped with X (X = Co, Fe). The PL spectra of the ZnS:Mn, Co nanoparticle sample show three peaks at 410, 432 and 594 nm, while in the case of the ZnS:Mn, Fe nanoparticle sample the peaks are considerably different. The lifetimes are found to be in microsecond time domain for 594 nm emission, while nanosecond order lifetimes are obtained for 432 and 411 nm emission in ZnS:Mn, X nanophosphor samples. These lifetimes suggest a new additional decay channel of the carrier in the host material

  3. SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES

    Directory of Open Access Journals (Sweden)

    Nguyen Ngoc Long

    2017-11-01

    Full Text Available Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several tens of micrometers. Photoluminescence (PL and photoluminescence excitation (PLE spectra of the nanowires were measured in the range of temperature from 15 K to the room temperature. Photoluminescence spectra at low temperatures exhibit a group of ultraviolet (UV narrow peaks in the region 368 nm ~ 390 nm, and a blue-green very broad peak at 500 nm. Origin of the emission lines in PL spectra and the lines in PLE spectra is discussed.

  4. Visible photoluminescence from hydrogenated silicon particles suspended in a silane plasma

    International Nuclear Information System (INIS)

    Courteille, C.; Dorier, J.L.; Dutta, J.; Hollenstein, C.; Howling, A.A.; Stoto, T.

    1994-09-01

    Visible photoluminescence at room temperature has been observed in amorphous hydrogenated silicon particulates during their formation in a silane radio-frequency plasma. Oxygen injection along with mass spectrometry measurements demonstrate that oxygen has no influence on the photoluminescence. The appearance of visible photoluminescence coincides with a particle agglomeration phase as shown by laser light scattering experiments, and electron microscopy shows silicon nanocrystals within these particulates. These observations of visible photoluminescence are consistent with the model of quantum confinement in the silicon nanocrystals. (author) 5 figs., 45 refs

  5. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  6. Photoluminescence properties of Co-doped ZnO nanocrystals

    DEFF Research Database (Denmark)

    Lommens, P.; Smet, P.F.; De Mello Donega, C.

    2006-01-01

    We performed photoluminescence experiments on colloidal, Co -doped ZnO nanocrystals in order to study the electronic properties of Co in a ZnO host. Room temperature measurements showed, next to the ZnO exciton and trap emission, an additional emission related to the Co dopant. The spectral...... position and width of this emission does not depend on particle size or Co concentration. At 8 K, a series of ZnO bulk phonon replicas appear on the Co-emission band. We conclude that Co ions are strongly localized in the ZnO host, making the formation of a Co d-band unlikely. Magnetic measurements...

  7. Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

    Energy Technology Data Exchange (ETDEWEB)

    Isaac, A.

    2006-08-11

    The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

  8. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

  9. Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon

    International Nuclear Information System (INIS)

    Herlufsen, Sandra; Schmidt, Jan; Hinken, David; Bothe, Karsten; Brendel, Rolf

    2008-01-01

    We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  10. Photoluminescence efficiency in AlGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

    2014-11-15

    Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

  11. The photoluminescence of Co-Al-layered double hydroxide

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We report a new optical behaviour of pure Co-Al-layered double hydroxide (LDH). It was found that the Co-Al-LDH sample could emit fluorescence without any fluorescent substances intercalated. Its excitation spectrum shows a maximum peak near the wavelength 370 nm, the maximum emission peak appears at 430 nm and the photoluminescence colour of the Co-Al-LDH sample is blue. This new optical property will be expected to extend the potential applications of LDHs in optical materials field.

  12. Lensless Photoluminescence Hyperspectral Camera Employing Random Speckle Patterns.

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Denk, Ondřej; Hlubuček, Jiří

    2017-01-01

    Roč. 7, č. 1 (2017), č. článku 15309. ISSN 2045-2322 R&D Projects: GA MŠk(CZ) LO1206; GA ČR(CZ) GJ17-26284Y Institutional support: RVO:61389021 Keywords : compressed sensing * photoluminescence imaging * laser speckles * single-pixel camera Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 4.259, year: 2016 https://www.nature.com/articles/s41598-017-14443-4

  13. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    International Nuclear Information System (INIS)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-01-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  14. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Science.gov (United States)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-05-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  15. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, Nikola; D' Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo, E-mail: nikolap@science.unitn.it [Department of Physics, University of Trento, Via Sommarive 14, I-38123 Trento (Italy)

    2011-05-27

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  16. Photoluminescence excitation measurements using pressure-tuned laser diodes

    Science.gov (United States)

    Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-06-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

  17. Photoluminescence excitation measurements using pressure-tuned laser diodes

    International Nuclear Information System (INIS)

    Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-01-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

  18. Power-law photoluminescence decay in indirect gap quantum dots

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Král, Karel

    2013-01-01

    Roč. 111, November (2013), s. 170-174 ISSN 0167-9317 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12186; GA MŠk LH12236; GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : quantum dots * indirect gap transition * power-law photoluminescence decay Subject RIV: BM - Solid Matter Physics ; Magnetism; BE - Theoretical Physics (FZU-D) Impact factor: 1.338, year: 2013

  19. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  20. Optical characterization of semiconductors infrared, Raman, and photoluminescence spectroscopy

    CERN Document Server

    Perkowitz, Sidney

    1993-01-01

    This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial sci

  1. Microscopic modeling of photoluminescence of strongly disordered semiconductors

    International Nuclear Information System (INIS)

    Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, S.W.

    2007-01-01

    A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution

  2. Photoluminescence of Copper-Doped Lithium Niobate Crystals

    Science.gov (United States)

    Gorelik, V. S.; Pyatyshev, A. Yu.; Sidorov, N. V.

    2018-05-01

    The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV-Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520-620 nm.

  3. Negative thermal quenching of photoluminescence in ZnO

    International Nuclear Information System (INIS)

    Watanabe, M.; Sakai, M.; Shibata, H.; Satou, C.; Satou, S.; Shibayama, T.; Tampo, H.; Yamada, A.; Matsubara, K.; Sakurai, K.; Ishizuka, S.; Niki, S.; Maeda, K.; Niikura, I.

    2006-01-01

    We have studied photoluminescence (PL) spectra of ZnO single crystals at photon energies ranging between 2.1 and 3.4eV as a function of temperature to determine thermal quenching behavior in PL emission intensity. It appears that the deep level emissions, donor-acceptor pair emissions, and the bound excitonic emissions undergo negative thermal quenching (NTQ) at intermediate temperatures above ∼10K. By employing an NTQ formula expressed analytically as a function of temperature, we have obtained quantitative NTQ characteristics in terms of the activation energies associated with the intermediate states as well as nonradiative channels

  4. Photoluminescence model of sulfur passivated p-InP nanowires

    International Nuclear Information System (INIS)

    Tajik, N; Haapamaki, C M; LaPierre, R R

    2012-01-01

    The effect of ammonium polysulfide solution, (NH 4 ) 2 S x , on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 10 12 to 10 10 cm −2 , corresponding to a change in surface recombination velocity from 10 6 to 10 4 cm s −1 . The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable. (paper)

  5. Photoluminescence of ZnBeMnSe solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Strzałkowski, K., E-mail: skaroll@fizyka.umk.pl; Firszt, F.; Marasek, A.

    2017-04-15

    In this paper optical properties of Zn{sub 1-x-y}Be{sub x}Mn{sub y}Se mixed semiconductors were studied as a function of both, temperature and excitation power. The crystals under investigation were grown by the high-pressure, high-temperature vertical Bridgman technique within the range of the composition 0.05≤x, y≤0.2. Photoluminescence spectra for the lowest content of Mn and Be exhibit character typical for II-VI semiconductors together with intensive yellow-orange manganese emission. Evolution of the excitonic emission as the function of temperature allowed determining the energy gap of the investigated semiconductors. Absorbance and photoluminescence excitation spectra confirmed crystal field splitting of excited atomic terms of manganese ions into the states, denoted according to the crystal field theory in the case of tetrahedral symmetry. Temperature and laser power dependences of luminescence showed anomalous behavior of the manganese emission. It turned out that the position of the Mn{sup 2+} related luminescence band does not change monotonically with the variation of the temperature or the excitation power. Finally, switching of the manganese emission has been observed. By increasing laser power of exciting radiation, the Mn-related emission could be quenched by almost two orders in magnitude. This effect was especially strong at low temperature and it was fully reversible.

  6. Photoluminescence of 1,3-dimethyl pyrazoloquinoline derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Koscien, E. [1st Liceum, Sobieskiego 22, 42-700 Lubliniec (Poland); Gondek, E.; Pokladko, M. [Institute of Physics, Technical University of Krakow, Podhorazych 1, 30-084 Krakow (Poland); Jarosz, B. [Department of Chemistry, Hugon Kollotaj Agricultural University, Al. Mickiewicza 24/28, 30-059 Krakow (Poland); Vlokh, R.O. [Institute of Physical Optics, Dragomanova 23, 79005 Lviv (Ukraine); Kityk, A.V. [Department of Electrical Engineering, Czestochowa University of Technology, Al. Armii Krajowej 17, 42-200 Czestochowa (Poland)], E-mail: kityk@ap.univie.ac.at

    2009-04-15

    This paper presents absorption and photoluminescence of 6-F, 6-Br, 6-Cl, 7-TFM and 6-COOEt derivatives of 1,3-dimethyl-1H-Pyrazolo[3,4-b]quinoline (DMPQ). The measured absorption and emission spectra are compared with the quantum chemical calculations performed by means of the semi-empirical methods (AM1 or PM3) that are applied either to the equilibrium conformations in vacuo (T = 0 K) or combined with the molecular dynamics simulations (T = 300 K). The spectra calculated by the AM1 method appear to be for all dyes in practically excellent agreement with the measured ones. In particular, the position of the first absorption band is obtained with the accuracy up to a few nanometers, whereas the calculated photoluminescence spectra predict the positions of the emission maxima for a gas phase with the accuracy up to 10-18 nm. The photoemission spectra of DMPQ dyes are considerably less solvatochromic comparing to phenyl-containing pyrazoloquinoline derivatives. According to the quantum chemical analysis the reason for such behaviour lies in a local character of the electronic transitions of DMPQ dyes which are characterized by a relatively small difference between the excited state and ground state dipole moments. Importantly that the rotational dynamics of both methyl subunits does not change this situation.

  7. Photoluminescence and optical transmission of diamond and its imitators

    International Nuclear Information System (INIS)

    Lipatov, E.I.; Avdeev, S.M.; Tarasenko, V.F.

    2010-01-01

    Photoluminescence and optical transmission spectra of several samples of natural and synthetic diamond and its imitators - fianite and corundum - are investigated. The band-A of luminescence at 440 nm, the vibronic N3 system of luminescence and absorption at 415.2 nm, the fundamental absorption edge at 225 nm, and the secondary absorption below 308 nm are the main identifying markers of natural diamonds. For synthetic diamonds, however, such identifying markers are the free-exciton luminescence at 235 nm, the band-A, and the fundamental absorption edge. Fianites can be identified by the structureless wideband at 500 nm and the wide transmission band in the entire visible range. Colored corundum samples with chrome impurities emit the narrow line at 693 nm and show the absorption band in the 500-600 nm spectral range. A new method for diamond express identification is developed on the basis of measurement of photoluminescence and optical transmission spectra of the samples. It is shown that a diamond tester can be designed combining a spectrometer and a KrCl-excilamp radiating at 222 nm.

  8. Photoluminescence and lasing in whispering gallery mode glass microspherical resonators

    Energy Technology Data Exchange (ETDEWEB)

    Ristić, D. [Ruđer Bošković Institute, Division of Materials Physics, Laboratory for Molecular Physics, Bijenička c. 54, Zagreb (Croatia); Center of Excellence for Advanced Materials and Sensing Devices, Research unit New Functional Materials, Bijenička c. 54, Zagreb (Croatia); Berneschi, S.; Camerini, M. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Farnesi, D.; Pelli, S. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Centro Studi e Ricerche ' E. Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); Trono, C. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Chiappini, A.; Chiasera, A.; Ferrari, M. [CSMFO Group, Istituto di Fotonica e Nanotecnologie, IFN-CNR, Via alla Cascata 56/C, 38050 Povo-Trento (Italy); Lukowiak, A. [Institute of Low Temperature and Structure Research, PAS, ul. Okolna 2, Wroclaw 50-950 (Poland); Dumeige, Y.; Féron, P. [Laboratoire d' Optronique, (CNRS-UMR 6082-Foton), ENSSAT, 6 rue de Kérampont, 22300 Lannion (France); Righini, G.C. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Centro Studi e Ricerche ' E. Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); Soria, S., E-mail: s.soria@ifac.cnr.it [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Conti, G. Nunzi [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Centro Studi e Ricerche ' E. Fermi' , Piazza del Viminale 2, 00184 Roma (Italy)

    2016-02-15

    We report experimental results regarding the development of Er{sup 3+}-doped glass microspherical cavities for the fabrication of compact sources at 1.55 μm. We investigate several different approaches in order to fabricate the microspheres including direct melting of Er{sup 3+}-doped glass powders, synthesis of Er{sup 3+}-doped monolithic microspheres by drawing Er{sup 3+}-doped glass, and coating of silica microspheres with an Er{sup 3+}-doped sol–gel layer. Details of the different fabrication processes are presented together with the photoluminescence characterization in free space configuration of the microspheres and of the glass precursor. We have analyzed the photoluminescence spectra of the whispering gallery modes of the microspheres excited using evanescent coupling and we demonstrate tunable laser action in a wide range of wavelengths around 1.55 μm. As much as 90 μW of laser output power was measured in Er{sup 3+}-doped glass microspheres. - Highlights: • Different approaches in microsphere fabrication and various types of post-processing. • Trimming of photorefractive glass microsphere lasers with UV light. • Peak power record of 90 μW by pumping at 1480 nm.

  9. Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

    International Nuclear Information System (INIS)

    Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

    2008-01-01

    Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

  10. Enhancement of porous silicon photoluminescence by electroless deposition of nickel

    Energy Technology Data Exchange (ETDEWEB)

    Amdouni, S. [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia); Rahmani, M., E-mail: rahmanimehdi79@yahoo.com [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia); Zaïbi, M.-A [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia); Ecole Nationale Supérieure des Ingénieurs de Tunis, Université de Tunis, 5 Avenue Taha Hussein, 1008 Tunis (Tunisia); Oueslati, M. [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia)

    2015-01-15

    Nickel-porous silicon nanocomposites (PS/Ni) are elaborated by an electroless deposition method using NiCl{sub 2} aqueous solution. The presence of nickel ions in the porous layer is confirmed by Fourier Transformed InfraRed spectroscopy (FTIR) and Raman spectroscopy. The photoluminescence (PL) spectra of PS/Ni, prepared at different electroless durations (t{sub edp}), are analyzed. A remarkable enhancement in the integrated PL intensity of PS containing nickel was observed. The lower t{sub edp} favor the deposition of nickel in PS, hence the silicon dangling bonds at the porous surface are quenched and this was increased the PL intensity. However, for the longer t{sub edp}, the PL intensity has been considerably decreased due to the destruction of some Si nanocrystallites. The PL spectra of PS/Ni, for t{sub edp} less than 8 min, show a multiband profile indicating the creation of new luminescent centers by Ni elements which induces a strong modification in the emission mechanisms. - Highlights: • Deposition of Ni ions into porous silicon (PS) layer using the electroless method. • Formation of Ni–O bonds on the porous layer. • The photoluminescence (PL) intensity of PS is enhanced after Ni deposition. • The increase of the PL is due to the contribution of radiative centers related to Ni.

  11. Tunable photoluminescence of porous silicon by liquid crystal infiltration

    International Nuclear Information System (INIS)

    Ma Qinglan; Xiong Rui; Huang Yuanming

    2011-01-01

    The photoluminescence (PL) of porous silicon films has been investigated as a function of the amount of liquid crystal molecules that are infiltrated into the constricted geometry of the porous silicon films. A typical nematic liquid crystal 4-pentyl-4'-cyanobiphenyl was employed in our experiment as the filler to modify the PL of porous silicon. It is found that the originally red PL of porous silicon films can be tuned to blue by simply adjusting the amount of liquid crystal molecules in the microchannels of the porous films. The chromaticity coordinates are calculated for the recorded PL spectra. The mechanism of the tunable PL is discussed. Our results have demonstrated that the luminescent properties of porous silicon films can be efficiently tuned by liquid crystal infiltration. - Highlights: → Liquid crystal infiltration can tune the photoluminescence of porous silicon. → Red emission of porous silicon can be switched to blue by the infiltration. → Chromaticity coordinates are calculated for the tuned emissions. → White emission is realized for porous silicon by liquid crystal infiltration.

  12. Photoluminescence properties of Eu2+-activated Ca2Y2Si2O9 phosphor

    NARCIS (Netherlands)

    Zhang, Zhijun; Delsing, A.C.A.; Notten, P.H.L.; Zhao, Jingtai; Hintzen, H.T.J.M.

    2012-01-01

    Eu2+-activated Ca2Y2Si2O9 phosphors with different Eu2+ concentrations have been prepared by a solid-state reaction method at high temperature and their photoluminescence (PL) properties were investigated. Photoluminescence results show that Eu2+-doped Ca2Y2Si2O9 can be efficiently excited by

  13. Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

    NARCIS (Netherlands)

    Fomin, V.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Koenraad, P.M.; Wolter, J.H.

    2000-01-01

    We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes.

  14. Effect of γ irradiation on the photoluminescence kinetics of porous silicon

    International Nuclear Information System (INIS)

    Agekyan, V.F.; Stepanov, Yu.A.; Emtsev, V.V.; Lebedev, A.A.; Poloskin, D.S.; Remenyuk, A.D.

    1999-01-01

    The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time

  15. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  16. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    Science.gov (United States)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  17. Correlation between surface modification and photoluminescence properties of β-Ga2O3 nanostructures

    Directory of Open Access Journals (Sweden)

    R. Jangir

    2016-03-01

    Full Text Available In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy. Photoluminescence spectra for all the samples of β-Ga2O3 nanostructures exhibit an UV and blue emission band. The relative intensity of UV and blue luminescence is strongly affected by the surface defects present on the nanostructures. Our study shows that Photoluminescence intensity of UV and blue luminescence can be reliably used to determine the quality of β-Ga2O3 nanostructures. Further the work opens up the possibility of using UV excitation and subsequent Photoluminescence analysis as a possible means for oxygen sensing. The Photoluminescence mechanism in β-Ga2O3 nanostructures is also discussed.

  18. Synthesis, photoluminescence and magnetic properties of barium vanadate nanoflowers

    International Nuclear Information System (INIS)

    Xu, Jing; Hu, Chenguo; Xi, Yi; Peng, Chen; Wan, Buyong; He, Xiaoshan

    2011-01-01

    Graphical abstract: The flower-shaped barium vanadate was obtained for the first time. The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. Research highlights: → In the paper, the flower-shaped barium vanadate were obtained for the first time. The CHM method used here is new and simple for preparation of barium vanadate. → The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. The strong bluish-green emission was observed. → The ferromagnetic behavior of the barium vanadate nanoflowers was found with saturation magnetization of about 83.50 x 10 -3 emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10 -3 emu/g. → The mechanisms of PL and magnetic property of barium vanadate nanoflowers have been discussed. -- Abstract: The flower-shaped barium vanadate has been obtained by the composite hydroxide mediated (CHM) method from V 2 O 5 and BaCl 2 at 200 o C for 13 h. XRD and XPS spectrum of the as-synthesized sample indicate it is hexagonal Ba 3 V 2 O 8 with small amount of Ba 3 VO 4.8 coexistence. Scan electron microscope and transmission electron microscope display that the flower-shaped crystals are composed of nanosheets with thickness of ∼20 nm. The UV-visible spectrum shows that the barium vanadate sample has two optical gaps (3.85 eV and 3.12 eV). Photoluminescence spectrum of the barium vanadate flowers exhibits a visible light emission centered at 492 and 525 nm which might be attributed to VO 4 tetrahedron with T d symmetry in Ba 3 V 2 O 8 . The ferromagnetic behavior of the barium vanadate nanoflowers has been found with saturation magnetization of about 83.50 x 10 -3 emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10 -3 emu/g, which is mainly due to the presence of a non-orthovanadate phase with spin S = 1/2.

  19. Electrically tuned photoluminescence in large pitch cholesteric liquid crystal

    International Nuclear Information System (INIS)

    Middha, Manju; Kumar, Rishi; Raina, K. K.

    2014-01-01

    Cholesteric liquid crystals are known as 1-D photonic band gap materials due to their periodic helical supramolecular structure and larger birefringence. Depending upon the helical twisted pitch length, they give the characteristic contrast due to selective Bragg reflections when viewed through the polarizing optical microscope and hence affect the electro-optic properties. So the optimization of chiral dopant concentration in nematic liquid crystal leads to control the transmission of polarized light through the microscope. Hence transmission based polarizing optical microscope is used for the characterization of helical pitch length in the optical texture. The unwinding of helical pitch was observed with the application of electric field which affects the intensity of photoluminescence

  20. Photoluminescence of acupoint 'Waiqiu' in human superficial fascia

    International Nuclear Information System (INIS)

    Zhang Yuan; Yan Xiaohui; Liu Chenglin; Dang Ruishan; Zhang Xinyi

    2006-01-01

    The spectral characters of an acupuncture point named 'Waiqiu' in superficial fascia tissue have been studied by photoluminescence (PL) spectroscopy under the excitation of 457.9 nm. The PL around 'Waiqiu' acupuncture point consists of two sub-bands resulting from the flavin adenine dinucleotide (FAD) and phospholipids, and the porphyrins (including purine, isoxanthopterin and tryptophan), respectively. More emission due to FAD and phospholipids is found inside the acupuncture effect area of 'Waiqiu' than its marginal or outside acupuncture regions. The ratio of emission intensity of FAD and phospholipids to one of porphyrins gradually decreases along the direction away from the center of the acupuncture point. It implies that the component proportion changes between FAD, phospholipids and porphyrins around the 'Waiqiu' acupuncture point. We suggest that there might be a certain relationship between redox function of FAD and 'Waiqiu' acupuncture effect

  1. Photoluminescence in large fluence radiation irradiated space silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hisamatsu, Tadashi; Kawasaki, Osamu; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Tsukamoto, Kazuyoshi

    1997-03-01

    Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

  2. Note: Photoluminescence measurement system for multi-junction solar cells.

    Science.gov (United States)

    Trespidi, F; Malchiodi, A; Farina, F

    2017-05-01

    We describe a photoluminescence spectroscopy system developed for studying phenomena of optical coupling in multiple-junction solar cells and processed/unprocessed wafers, under the high solar concentration levels typical of HCPV (High Concentration PhotoVoltaic) systems. The instrument operates at room temperature over two spectral ranges: 475 nm-1100 nm and 950 nm-1650 nm. Power densities exceeding 10 000 suns can be obtained on the sample. The system can host up to four compact focusable solid state laser sources, presently only three are mounted and operated at 450 nm, 520 nm, and 785 nm; they provide overlapped beams on the sample surface and can shine simultaneously the sample to study possible mutual interaction between the different junctions.

  3. Correlation of electrical conductivity and photoluminescence in nanoporous silicon

    International Nuclear Information System (INIS)

    Bouaicha, M.; Khardani, M.; Bessais, B.

    2006-01-01

    The effective electrical conductivity of p type porous silicon is determined both theoretically and experimentally for different porosities ranging from 30% to 80%. In this work, Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon samples were prepared by the electrochemical etching method for different values of the anodic current. The porous material is assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of a PS layer, to the peak energy of its photoluminescence (PL) spectrum. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities. The results are discussed as regard to other works

  4. Formation Mechanism of Carbogenic Nanoparticles with Dual Photoluminescence Emission

    KAUST Repository

    Krysmann, Marta J.

    2012-01-18

    We present a systematic investigation of the formation mechanism of carbogenic nanoparticles (CNPs), otherwise referred to as C-dots, by following the pyrolysis of citric acid (CA)-ethanolamine (EA) precursor at different temperatures. Pyrolysis at 180 °C leads to a CNP molecular precursor with a strongly intense photoluminescence (PL) spectrum and high quantum yield formed by dehydration of CA-EA. At higher temperatures (230 °C) a carbogenic core starts forming and the PL is due to the presence of both molecular fluorophores and the carbogenic core. CNPs that exhibit mostly or exclusively PL arising from carbogenic cores are obtained at even higher temperatures (300 and 400 °C, respectively). Since the molecular fluorophores predominate at low pyrolysis temperatures while the carbogenic core starts forming at higher temperatures, the PL behavior of CNPs strongly depends on the conditions used for their synthesis. © 2011 American Chemical Society.

  5. Photoluminescence of phosphors for PDP with VUV excitation

    International Nuclear Information System (INIS)

    Lu, H.-C.; Chen, H.-K.; Tseng, T.-Y.; Kuo, W.-L.; Alam, M.S.; Cheng, B.-M.

    2005-01-01

    In a plasma display panel (PDP) He-Xe or Ne-Xe gaseous mixtures are subjected to electric discharge between two glass panels, so to generate VUV light. Red, green and blue phosphors absorb this VUV radiation and re-radiate the energy as visible light to produce the colors that appear on the screen. The phosphor plays an important role in the working of a PDP. To improve the efficiency of phosphors, we have established a photoluminescence end station coupled to the beam line of a synchrotron to study the luminescence of PDP phosphors. This luminescence is analyzed with a 0.32 m monochromator having maximum resolution 0.04 nm, and is monitored with a photomultiplier tube operated in a photon-counting mode. Preliminary data demonstrate the powerful performance of this end-station for studying PDP phosphors

  6. Blue-green photoluminescence in MCM-41 mesoporous nanotubes

    CERN Document Server

    Shen, J L; Lui, Y L; Cheng, P W; Cheng, C F

    2003-01-01

    Different photoluminescence (PL) techniques have been used to study the blue-green emission from siliceous MCM-41 nanotubes. It was found that the intensity of the blue-green PL is enhanced by rapid thermal annealing (RTA). This enhancement is explained by the generation of twofold-coordinated Si centres and non-bridging oxygen hole centres, in line with the surface properties of MCM-41. On the basis of the analysis of the PL following RTA, polarized PL, and PL excitation, we suggest that the triplet-to-singlet transition of twofold-coordinated silicon centres is responsible for the blue-green PL in MCM-41 nanotubes. (letter to the editor)

  7. Electro- and photoluminescence in ZnS crystals

    International Nuclear Information System (INIS)

    Klimenko, V.I.; Muradyan, A.M.; Solov'ev, A.V.; Shmurak, S.Z.

    1991-01-01

    Comperative study of spectral characteristics of electroluminescence (EL), induced by alternative electrical field (frequency-10kHz, average field intencity-10 2 -5x10 3 V/cm), and photoluminescence (PL) of ZnS-Cu microtwin crystals is carried out. It is shown, that PL and EL spectra differ within the hole temperature range of 77-300 K. Difference in the process of EL and PL temperature dependences is revealed. The EL minimum at T min ∼ 170-180K. The EL intensity at T min is by order lower than at 77 and 300 K. The PL dependence at the same time monotonically decreases by T increase. EL mechanism, explaining the experimental data obtained is proposed

  8. Ultraviolet photoluminescence in Gd-doped silica and phosphosilicate fibers

    Directory of Open Access Journals (Sweden)

    Y. Wang

    2017-04-01

    Full Text Available Optical fiber lasers operating in the near infrared and visible spectral regions have relied on the spectroscopic properties of rare earth ions such as Yb3+, Er3+, Tm3+, Nd3+, and Sm3+. Here, we investigate Gd3+ doping in phosphosilicate and pure silica fibers using solution doping and sol-gel techniques, respectively, for potential applications in the ultraviolet. Photoluminescence spectra for optical fiber bundles and fiber preforms were recorded and compared. Emissions at 312 nm (phosphosilicate and 314 nm (pure silica were observed when pumping to the Gd3+ 6DJ, 6IJ, and 6PJ = 5/2, 3/2 energy levels. Oxygen deficient center was observed in solution doping sample with a wide absorption band centered at around 248 nm not affecting pumping to 6IJ states.

  9. Growth orientation dependent photoluminescence of GaAsN alloys

    International Nuclear Information System (INIS)

    Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi; Sato, Shinichiro

    2012-01-01

    We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

  10. Enhancement of porous silicon photoluminescence property by lithium chloride treatment

    Science.gov (United States)

    Azaiez, Khawla; Zaghouani, Rabia Benabderrahmane; Khamlich, Saleh; Meddeb, Hosny; Dimassi, Wissem

    2018-05-01

    Porous silicon (PS) decorated by several nanostructured metal elements has still aroused interests as promising composites in many industrial applications. With the focus mainly on the synthesis, the aspect of stability against optical irradiation of such materials has so far not been thoroughly addressed. This work focuses primarily on the influence of lithium chloride solution (LiCl) treatment on the physical properties of PS. Variations in the structural and optoelectronic properties of PS were observed after immersion in (LiCl), as revealed by the obtained analyses. Moreover, enhanced photoluminescence (PL) property of the PS after passivation by lithium particles was clearly shown, and their presence on the surface of the microporous silicon was confirmed by FTIR spectroscopy and atomic force microscopy. An improvement of the minority carrier lifetime was also obtained, which was attributed to the decrease of the surface recombination velocity after LiCl treatment.

  11. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  12. Preparation, characterization and photoluminescence of nanocrystalline calcium molybdate

    International Nuclear Information System (INIS)

    Phuruangrat, Anukorn; Thongtem, Titipun; Thongtem, Somchai

    2009-01-01

    Nanocrystalline calcium molybdate was successfully synthesized from Ca(NO 3 ) 2 and Na 2 MoO 4 in ethylene glycol using a microwave radiation method. Body-centered tetragonal structured calcium molybdate with narrow nanosized distribution was detected using XRD, SAED and TEM. A diffraction pattern was also simulated and was found to be in accordance with those obtained from the experiment and JCPDS standard. Raman and FTIR spectra show the Mo-O prominent stretching bands in the [MoO 4 ] 2- tetrahedrons at 879.59 and 743-895 cm -1 , respectively. Photoluminescence emission of CaMoO 4 was detected at 477 nm, caused by the annihilation of a self-trapped excitons from the [MoO 4 ] 2- excited complex.

  13. Photoluminescence studies on porous silicon/polymer heterostructure

    International Nuclear Information System (INIS)

    Mishra, J.K.; Bhunia, S.; Banerjee, S.; Banerji, P.

    2008-01-01

    Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structures except that the polymer was infiltrated in the pores. The photoluminescence (PL) of the structures at 300 K showed that the emission intensity was very high as compared with that of the MEH-PPV films on different substrates such as crystalline silicon (c-Si) and indium tin oxide (ITO). The PL peak in the MEH-PPV/porous silicon composite structure is found to be shifted towards higher energy in comparison with porous silicon PL. A number of possibilities are discussed to explain the observations

  14. Detection of Human Ig G Using Photoluminescent Porous Silicon Interferometer.

    Science.gov (United States)

    Cho, Bomin; Kim, Seongwoong; Woo, Hee-Gweon; Kim, Sungsoo; Sohn, Honglae

    2015-02-01

    Photoluminescent porous silicon (PSi) interferometers having dual optical properties, both Fabry-Pérot fringe and photolumincence (PL), have been developed and used as biosensors for detection of Human Immunoglobin G (Ig G). PSi samples were prepared by electrochemical etching of p-type silicon under white light exposure. The surface of PSi was characterized using a cold field emission scanning electron microscope. The sensor system studied consisted of a single layer of porous silicon modified with Protein A. The system was probed with various fragments of aqueous human immunoglobin G (Ig G) analyte. Both reflectivity and PL were simultaneously measured under the exposure of human Ig G. An increase of optical thickness and decrease of PL were obtained under the exposure of human Ig G. Detection limit of 500 fM was observed for the human Ig G.

  15. Photoluminescence and Raman spectroscopy of single diamond nanoparticle

    International Nuclear Information System (INIS)

    Sun, K. W.; Wang, J. Y.; Ko, T. Y.

    2008-01-01

    The article reports techniques that we have devised for immobilizing and allocating a single nanodiamond on the electron beam (E-beam) lithography patterned semiconductor substrate. By combining the E-beam patterned smart substrate with the high throughput of a confocal microscope, we are able to overcome the limitation of the spatial resolution of optical techniques (∼1 μm) to obtain the data on individual nano-object with a size range between 100 and 35 nm. We have observed a broad photoluminescence centered at about 700 nm from a single nanodiamond which is due to the defects, vacancies in the nanodiamonds, and the disordered carbon layer covered on the nanodiamond surface. We also observe red-shift in energy and broadening in linewidth of the sp 3 bonding Raman peak when the size of the single nanodiamond is reduced due to the phonon-confinement effects.

  16. Blue photoluminescence in Ti-doped alkaline-earth stannates

    International Nuclear Information System (INIS)

    Yamashita, Takahiro; Ueda, Kazushige

    2007-01-01

    Blue photoluminescence properties of Ti-doped alkaline-earth stannates, A 2 (Sn 1- x Ti x )O 4 (A=Ca, Sr, Ba) (x=0.005-0.15), were examined at room temperature. These stannates showed intense broad emission bands peaking at 445 nm for Ca 2 SnO 4 , at 410 nm for Sr 2 SnO 4 , and at 425 nm for Ba 2 SnO 4 under UV excitation. Emission intensities were relatively insensitive to Ti concentration and no sharp concentration quenching was observed. Mixing alkaline-earth ions in the crystal structures did not increase the emission intensities in the A 2 (Sn 1- x Ti x )O 4 system. The excitation spectra of these stannates exhibited broad bands just below the fundamental absorption edges, implying that luminescence centers do not consist of the component elements in the host materials. It was suggested that the isolated TiO 6 complexes are possible luminescence centers in these materials, as previously proposed in other Ti-doped stannates such as Mg 2 SnO 4 and Y 2 Sn 2 O 7 . - Graphical abstract: Blue photoluminescence properties of Ti-doped alkaline-earth stannates, A 2 (Sn 1- x Ti x )O 4 (A=Ca, Sr, Ba) (x=0.005-0.15), were examined at room temperature. These stannates showed intense broad emission bands peaking at 445 nm for Ca 2 SnO 4 , at 410 nm for Sr 2 SnO 4 , and at 425 nm for Ba 2 SnO 4 under UV excitation

  17. Reversible photoluminescence in spiropyran-modified porous silicon

    International Nuclear Information System (INIS)

    Lee, Chen-Yu; Hu, Chih-Hsuan; Cheng, Sheng-Lin; Chu, Chih-Chien; Hsiao, Vincent K.S.

    2015-01-01

    Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material by using reversible photoluminescence (PL). Before spiropyran modification, the peak wavelength from PS was approximately 600 nm. Subsequent spiropyran modification strongly quenched the PL intensity, from 15,000 to 2000 counts. However, under UV light irradiation, the PL intensity from spiro-PS was increased gradually to 20,000 counts because of the photoinduced ring opening from a colorless spiropyran (SP-form) to a colored merocyanine (MC-form). Furthermore, the resulting peak wavelength of the PL of an MC–PS sample red-shifted from 600 to 650 nm, and the PL intensity was higher than that of unmodified PS. Because the fluorescence emission band (500–700 nm) of PS substantially overlapped the absorption band (500–700 nm) of the MC-form of spiropyran, the energy transfer from the PS (donor) to the open-ring-state MC-form (acceptor) occurs efficiently. The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus. The current demonstrations have potential in reversible solid-state lighting or data storage applications. - Highlights: • Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material with reversible photoluminescence (PL). • UV light irradiation make PL intensity from spiro-PS increased due to the photo-induced ring opening process. • The energy transfer from the PS (donor) to the open-ring state of spiropyran (acceptor) was to be efficient due to the fluorescence emission band of PS substantially overlapped with the absorption band of the ring-opened spiro. • The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus

  18. Nanomedicine photoluminescence crystal-inspired brain sensing approach

    Science.gov (United States)

    Fang, Yan; Wang, Fangzhen; Wu, Rong

    2018-02-01

    Precision sensing needs to overcome a gap of a single atomic step height standard. In response to the cutting-edge challenge, a heterosingle molecular nanomedicine crystal was developed wherein a nanomedicine crystal height less than 1 nm was designed and selfassembled on a substrate of either a highly ordered and freshly separated graphite or a N-doped silicon with hydrogen bonding by a home-made hybrid system of interacting single bioelectron donor-acceptor and a single biophoton donor-acceptor according to orthogonal mathematical optimization scheme, and an atomic spatial resolution conducting atomic force microscopy (C-AFM) with MHz signal processing by a special transformation of an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) were employed, wherein a z axis direction UV-VIS laser interferometer and a feedback circuit were used to achieve the minimized uncertainty of a micro-regional structure height and its corresponding local differential conductance quantization (spin state) process was repeatedly measured with a highly time resolution, as well as a pulsed UV-VIS laser micro-photoluminescence (PL) spectrum with a single photon resolution was set up by traceable quantum sensing and metrology relied up a quantum electrical triangle principle. The coupling of a single bioelectron conducting, a single biophoton photoluminescence, a frequency domain temporal spin phase in nanomedicine crystal-inspired sensing methods and sensor technologies were revealed by a combination of C-AFM and PL measurement data-based mathematic analyses1-3, as depicted in Figure 1 and repeated in nanomedicine crystals with a single atomic height. It is concluded that height-current-phase uncertainty correlation pave a way to develop a brain imaging and a single atomic height standard, quantum sensing, national security, worldwide impact1-3 technology and beyond.

  19. Tilted dipole model for bias-dependent photoluminescence pattern

    Energy Technology Data Exchange (ETDEWEB)

    Fujieda, Ichiro, E-mail: fujieda@se.ritsumei.ac.jp; Suzuki, Daisuke; Masuda, Taishi [Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu 525-8577 (Japan)

    2014-12-14

    In a guest-host system containing elongated dyes and a nematic liquid crystal, both molecules are aligned to each other. An external bias tilts these molecules and the radiation pattern of the system is altered. A model is proposed to describe this bias-dependent photoluminescence patterns. It divides the liquid crystal/dye layer into sub-layers that contain electric dipoles with specific tilt angles. Each sub-layer emits linearly polarized light. Its radiation pattern is toroidal and is determined by the tilt angle. Its intensity is assumed to be proportional to the power of excitation light absorbed by the sub-layer. This is calculated by the Lambert-Beer's Law. The absorption coefficient is assumed to be proportional to the cross-section of the tilted dipole moment, in analogy to the ellipsoid of refractive index, to evaluate the cross-section for each polarized component of the excitation light. Contributions from all the sub-layers are added to give a final expression for the radiation pattern. Self-absorption is neglected. The model is simplified by reducing the number of sub-layers. Analytical expressions are derived for a simple case that consists of a single layer with tilted dipoles sandwiched by two layers with horizontally-aligned dipoles. All the parameters except for the tilt angle can be determined by measuring transmittance of the excitation light. The model roughly reproduces the bias-dependent photoluminescence patterns of a cell containing 0.5 wt. % coumarin 6. It breaks down at large emission angles. Measured spectral changes suggest that the discrepancy is due to self-absorption and re-emission.

  20. Detection of certain minerals of uranium, zinc, lead and other metals using photoluminescence

    International Nuclear Information System (INIS)

    Seigel, H.O.; Robbins, J.C.

    1980-01-01

    We have discovered that certain photoluminescent minerals of uranium, lead, zinc, fluorine, tungsten and other elements which may naturally occur at the surface of the earth can be selectively detected in the presence of most other photoluminescent minerals and organic materials which are likely to occur at the earth's surface. The base of selective ldetection is the discovery that the lifetimes of photoluminescent emission of materials in the latter class are much shorter than the lifetimes of photoluminescent emission of materials in the former class. This invention utilizes this discovery in the detection of minerals of uranium, zinc, lead, flourine, tungsten, molybdenum, mercury and other elements. In one embodiment of the invention, using a laser or other short duration source of optical excitation, measurements of the photoluminescent response of the earth are made at times sufficiently long for the photoluminescence of other common and unwanted sources to have substantially decayed, thereby selectively detection and identifying certain minerals of potiential economic interest. In another embodiment a source of light is modulated at a predetermined frequency and the photoluminescent response of the earth which is out-of-phase with the source is measured. In a third embodiment this source of light may be incident solar radiation after passage through asuitable modulator

  1. METHOD OF NON-CONTACT PHOTOLUMINESCENT DIAGNOSTICS OF THE EYE FIBROUS TUNIC CONDITION

    Directory of Open Access Journals (Sweden)

    S. Yu. Petrov

    2018-01-01

    Full Text Available Non-contact optical diagnostics of structural disorders of the eye has a number of advantages: high speed, accuracy and a large range of parameters available for analysis. The paper presents the results of studies of the photoluminescence of the fibrous tunic of the eye, excited by polarized light, depending on the intraocular pressure. In the experiments, isolated de-epithelized eyes of the rabbit were used, inside of which pressure up to 50 mm Hg was artificially created. Under these conditions, the cornea and sclera were illuminated with linearly polarized light at wavelengths of 250, 350 and 450 nm, exciting photoluminescence in the wavelength range up to 700 nm. Cross and co-polarized photoluminescence spectra excited by linearly polarized light were obtained. It has been established that, when excited by polarized light, the photoluminescence of the cornea is partially polarized. Depending on the wavelength of the photoluminescence, the degree of polarization varies from 0.2 to 0.35. It is shown that the degree of polarization of the photoluminescence of the cornea of the eye upon excitation by linearly polarized light can be used as a measurable parameter for assessing the physiological state of the eye. It is shown that the photoluminescence spectrum consists of two bands with maxima near 460-470 and 430-440 nm. These bands are assigned, respectively, to pyridinnucleotides and glycosylated collagen. A significant contribution can be made by the epithelium of the eye, which contains riboflavin with characteristic absorption bands near 450 and 365 nm. When excited at 450 nm, the photoluminescence maximum is located near 540 nm, which corresponds to the spectrum of fluorophores in the endothelium and epithelium. The spectrum of photoluminescence upon excitation at a wavelength of 250 nm can be attributed to tryptophan located in the intraocular lens.

  2. Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

    CERN Document Server

    Sachenko, A V; Manojlov, E G; Svechnikov, S V

    2001-01-01

    The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

  3. Synthesis, structure and photoluminescence of (PLAGH)2[ZnCl4] and comparative analysis of photoluminescence properties with tris(2,2′-bipyridine)ruthenium(II)

    International Nuclear Information System (INIS)

    Radanović, Mirjana M.; Jelić, Miodrag G.; Romčević, Nebojša Ž.; Boukos, Nikos; Vojinović-Ješić, Ljiljana S.; Leovac, Vukadin M.; Hadžić, Branka B.; Bajac, Branimir M.; Nađ, Laslo F.; Chandrinou, Chrysoula; Baloš, Sebastian S.

    2015-01-01

    Highlights: • New zinc(II) complex with pyridoxalaminoguanidine was synthesized. • The enhancement of the photoluminescence due to the compound formation was achieved. • Very high photoluminescence of Zn(II) compound was noticed. • Comparative analysis of photoluminescence with tris(2,2′-bipyridine) ruthenium(II) was provided. - Abstract: The first compound of zinc(II) containing pyridoxalaminoguanidine has been synthesized and characterized by elemental analysis, infrared spectra, conductometric measurements and X-ray crystallography. Single crystals of the compound were obtained in the reaction of methanolic solution of zinc(II) chloride and pyridoxalaminoguanidine hydrochloride. In this compound the coordination of chelate ligand is absent and tetrachlorido complex of zinc(II) with pyridoxalaminuguanidinium cation as contraion is obtained. Photoluminescence spectra were measured. Lorentzian multipeak technique was used to determine peak wavelengths and their intensities. Photoluminescence spectroscopy upon 325, 488 and 514 nm laser excitation light was used to obtain results. This novel compound of zinc(II) was compared to the well-known organic light emitting diode material—ruthenium(II) complex with bypiridine i.e., tris(2,2′-bipyridine)ruthenium(II), under the same circumstances and the identical experimental setup. A scheme of energy levels and transitions is proposed to explain the obtained experimental results

  4. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  5. Enantioselective silver nanoclusters: Preparation, characterization and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Farrag, Mostafa, E-mail: mostafafarrag@aun.edu.eg

    2016-09-01

    Herein, we report a new wet-synthesis method to separate some water-soluble chiral silver nanoclusters with high yield. The cluster material was obtained by the reduction of silver nitrate with NaBH{sub 4} in the presence of three ligands L-penicillamine (L-pen), D-penicillamine (D-pen) and racemic mixture of penicillamine (rac-pen), functioning as capping ligand. For characterizing all silver cluster samples, the particle size was assessed by transmission electron microscopy (TEM) and powder X-ray diffraction (XRD) and their average chemical formula was determined from thermogravimetric analysis (TGA) and elemental analysis (EA). The particles sizes of all three clusters are 2.1 ± 0.2 nm. The optical properties of the samples were studied by four different methods: UV-vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), photoluminescence spectroscopy (PL) and circular dichroism (CD) spectroscopy. The spectra are dominated by the typical and intense plasmon peak at 486 nm accompanied by a small shoulder at 540 nm. Infrared spectroscopy was measured for the free ligand and protected silver nanoclusters, where the disappearance of the S-H vibrational band (2535–2570 cm{sup −1}) in the silver nanoclusters confirmed anchoring of ligand to the cluster surface through the sulfur atom. PL studies yielded the fluorescent properties of the samples. The main focus of this work, however, lies in the chirality of the particles. For all silver clusters CD spectra were recorded. While for clusters capped with one of the two enantiomers (D- or L-form) typical CD spectra were observed, no significant signals were detected for a racemic ligand mixture. Furthermore, silver clusters show quite large asymmetry factors (up to 3 × 10{sup −4}) in comparison to most other ligand protected clusters. These large factors and bands in the visible range of the spectrum suggest a strong chiral induction from the ligand to the metal core. Textural features of the

  6. Ultrafast Time-Resolved Photoluminescence Studies of Gallium-Arsenide

    Science.gov (United States)

    Johnson, Matthew Bruce

    This thesis concerns the study of ultrafast phenomena in GaAs using time-resolved photoluminescence (PL). The thesis consists of five chapters. Chapter one is an introduction, which discusses the study of ultrafast phenomena in semiconductors. Chapter two is a description of the colliding-pulse mode-locked (CPM) ring dye laser, which is at the heart of the experimental apparatus used in this thesis. Chapter three presents a detailed experimental and theoretical investigation of photoluminescence excitation correlation spectroscopy (PECS), the novel technique which is used to time-resolve ultrafast PL phenomena. Chapters 4 and 5 discuss two applications of the PECS technique. In Chapter 4 the variation of PL intensity in In-alloyed GaAs substrate material is studied, while Chapter 5 discusses the variation of carrier lifetimes in ion-damaged GaAs used in photo-conductive circuit elements (PCEs). PECS is a pulse-probe technique that measures the cross correlation of photo-excited carrier populations. The theoretical model employed in this thesis is based upon the rate equation for a simple three-level system consisting of valence and conduction bands and a single trap level. In the limit of radiative band-to-band dominated recombination, no PECS signal should be observed; while in the capture -dominated recombination limit, the PECS signal from the band-to-band PL measures the cross correlation of the excited electron and hole populations and thus, the electron and hole lifetimes. PECS is experimentally investigated using a case study of PL in semi-insulating (SI) GaAs and In -alloyed GaAs. At 77 K, the PECS signal is characteristic of a capture-dominated system, yielding an electron-hole lifetime of about 200 ps. However, at 5 K the behavior is more complicated and shows saturation effects due to the C acceptor level, which is un-ionized at 5 K. As a first application, PECS is used to investigate the large band-to-band PL contrast observed near dislocations in In

  7. Red photoluminescence of living systems at the room temperature: measurements and results

    International Nuclear Information System (INIS)

    Kudryashova, I S; Rud, V Yu; Shpunt, V Ch; Rud, Yu V; Glinushkin, A P

    2016-01-01

    Presents results of a study of the red luminescence of living plants at room temperature. The analysis of obtained results allows to conclude that the photoluminescence spectra for green leaves in all cases represent the two closely spaced bands. (paper)

  8. Synthesis, characterization and photoluminescence properties of Dy3+ -doped nano-crystalline SnO2.

    CSIR Research Space (South Africa)

    Pillai, SK

    2010-04-15

    Full Text Available the crystallite size. The experimental result on photoluminescence characteristics originating from Dy3+-doping in nanocrystalline SnO2 reveals the dependence of the luminescent intensity on dopant concentration....

  9. Structural, photoluminescence and XPS properties of Tm3þ ions in ZnO nanostructures

    CSIR Research Space (South Africa)

    Kabongo, GL

    2017-07-01

    Full Text Available of photoluminescence (PL) spectroscopy. Finally, Tm 4d core level was detected in ZnO: 0.5 mol% Tm(sup3+) sample from high resolution X-Ray Photoelectron Spectroscopy (XPS) scan....

  10. Photoluminescence and ESR of glasses of the Ge-S system

    International Nuclear Information System (INIS)

    Cernoskova, E.; Cernosek, Z.; Holubova, J.

    1999-01-01

    In this work the chalcogenide glasses were studied by photoluminescence, electron spin resonance (ESR) as well as optically induce ESR (LESR) methods. Dependence of energy of luminescence and Stokes shift on glass composition was determined

  11. Chitosan/ZnAl_2O_4 films: structural evaluation and photoluminescent

    International Nuclear Information System (INIS)

    Araujo, P.M.A.G.; Costa, A.C.F.M.

    2014-01-01

    The photoluminescent materials have been the focus of intense research and applications in optics, electronics and biological areas. This work reports obtaining chitosan/ZnAl_2O_4 film in proportions of 1: 1, 1: 2, 1: 3, 1:4 to 1:5 by weight, and assess the structural properties of the films and photoluminescence. The samples were characterized by XRD, FTIR, emission and excitation. By XRD was found that all samples showed characteristic peaks of chitosan and ZnAl_2O_4. The FTIR spectra for all concentrations of Qs/NPs films exhibit characteristic bands of Qs and trend banding of ions ZnAl_2O_4. The emission and excitation spectra revealed the presence of a broadband processes associated with charge transfer to the Al"3"+ O"2"-, all samples showed good photoluminescent properties being that higher intensities of photoluminescence gave to the film concentration 1:4 being promising for photoelectronic applications. (author)

  12. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

    National Research Council Canada - National Science Library

    Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

    2002-01-01

    The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

  13. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ooi, Boon S.; Shen, Chao; Anjum, Dalaver H.; San-Romá n-Alerigi, Damiá n P.; Ng, Tien Khee

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed

  14. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  15. Influence of the thermal annealing on the photoluminescence of a-Si:H:F thin films

    International Nuclear Information System (INIS)

    Mendoza A, J.G.; Torres D, G.

    1984-01-01

    The experimental results of the photoluminescence spectra of intrinsic layers of a: Si: H: F deposited by the electric discharge method are presented. This procedure was developed in the presence of silane. (M.W.O.) [pt

  16. The photoluminescence spectra of micropowder of aromatic compounds under ultraviolet laser excitation

    International Nuclear Information System (INIS)

    Rakhmatullaev, I.A.; Kurbonov, A.K. et al.; Gorelik, V.S.

    2016-01-01

    The method of diagnostics of aromatic compounds on the example of novocaine, aspirin and anthracene is presented. The method is based on optical detection of photoluminescence spectra at ultraviolet laser (266 nm) excitation. Employing this method the photoluminescence spectra are obtained which allows one to establish the differences of the composition and structure of compounds. The developed method can be used for analysis the quality of the large class of luminescent bioactive structures under the ultraviolet radiation. (authors)

  17. Purchase of a Raman and Photoluminescence Imaging System for Characterization of Advanced Electrochemical and Electronic Materials

    Science.gov (United States)

    2016-01-05

    SECURITY CLASSIFICATION OF: Funds were used to purchase a Renishaw inVia Reflex Spectrometer System for Raman and Photoluminescence spectral...Unlimited UU UU UU UU 05-01-2016 15-Aug-2014 14-Aug-2015 Final Report: Purchase of a Raman and Photoluminescence Imaging System for Characterization of...MONITORING AGENCY NAME(S) AND ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 Raman spectroscopy

  18. Photoluminescent Gold Nanoclusters in Cancer Cells: Cellular Uptake, Toxicity, and Generation of Reactive Oxygen Species

    OpenAIRE

    Marija Matulionyte; Dominyka Dapkute; Laima Budenaite; Greta Jarockyte; Ricardas Rotomskis

    2017-01-01

    In recent years, photoluminescent gold nanoclusters have attracted considerable interest in both fundamental biomedical research and practical applications. Due to their ultrasmall size, unique molecule-like optical properties, and facile synthesis gold nanoclusters have been considered very promising photoluminescent agents for biosensing, bioimaging, and targeted therapy. Yet, interaction of such ultra-small nanoclusters with cells and other biological objects remains poorly understood. The...

  19. Photoluminescence properties of LiF bismuth silicate glass

    Science.gov (United States)

    Krishnan, M. Laya; Kumar, V. V. Ravi Kanth

    2018-04-01

    The sample (60-X) Bi2O3-30SiO2-XLiF where X=10, 15, 25 were prepared by conventional melt quenching method. X-ray diffraction pattern conformed the amorphous nature of the prepared sample and a broad peak at 2θ=30°. The Raman spectra confirmed that the Bi can exist both network former (BiO3 pyramidal) and network modifier (BiO6 octahedral)in the glass matrix. The samples showing broad absorption at 470nm is due to the presence of Bi2+ ions, because of increasing optical basicity the absorption edge of the sample is blue shifted. The photoluminescence spectra of the glass under 350nm excitation are showing two main peaks at 430nm and 630 nm due to Bi3+ and Bi2+ respectively and 25 LBS glass showing yellow, 15LBS showing near bluish white and 10LBS showing blue luminescence. The color purity and correlated color temperature are also calculated.

  20. Photoluminescence studies on Eu doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Ningthoujam, R.S.; Sudarsan, V.; Vatsa, R.K.; Kadam, R.M.; Jagannath; Gupta, A.

    2009-01-01

    Eu 3+ doped TiO 2 nanoparticles were prepared by urea hydrolysis in ethylene glycol medium at low temperature of 150 deg. C. X-ray diffraction study showed that anatase phase of tetragonal structure was formed below 500 deg. C; and above this temperature, additional peaks due to rutile phase were also observed. From luminescence study, it was found that as prepared nanoparticles showed the enhanced luminescence intensity due to energy transfer from host to europium ions. However, photoluminescence from these nanoparticles was found to disappear when the samples were heated above 900 deg. C. We established the origin of the reduction in the luminescence intensity from Eu 3+ when doped in TiO 2 and heated at 900 deg. C. Based on detailed studies at different heat-treatment temperatures using techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, electron paramagnetic resonance, Raman spectroscopy, and Moessbauer spectroscopy, it has been established that formation of Eu 2 Ti 2 O 7 phase, wherein Eu 3+ ions occupy high symmetric environment (D 3d ) and also reduced distance between Eu 3+ and Eu 3+ ions is responsible for the decrease/loss in the luminescence intensity.

  1. Photoluminescent ZnO Nanoparticles and Their Biological Applications

    Directory of Open Access Journals (Sweden)

    Zheng-Yong Zhang

    2015-05-01

    Full Text Available During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.

  2. Coherent photoluminescence excitation spectroscopy of semicrystalline polymeric semiconductors

    Science.gov (United States)

    Silva, Carlos; Grégoire, Pascal; Thouin, Félix

    In polymeric semiconductors, the competition between through-bond (intrachain) and through-space (interchain) electronic coupling determines two-dimensional spatial coherence of excitons. The balance of intra- and interchain excitonic coupling depends very sensitively on solid-state microstructure of the polymer film (polycrystalline, semicrystalline with amorphous domains, etc.). Regioregular poly(3-hexylthiophene) has emerged as a model material because its photoluminescence (PL) spectral lineshape reveals intricate information on the magnitude of excitonic coupling, the extent of energetic disorder, and on the extent to which the disordered energy landscape is correlated. I discuss implementation of coherent two-dimensional electronic spectroscopy. We identify cross peaks between 0-0 and 0-1 excitation peaks, and we measure their time evolution, which we interpret within the context of a hybrid HJ aggregate model. By measurement of the homogeneous linewidth in diverse polymer microstructures, we address the nature of optical transitions within such hynbrid aggregate model. These depend strongly on sample processing, and I discuss the relationship between microstructure, steady-state absorption and PL spectral lineshape, and 2D coherent PL excitation spectral lineshapes.

  3. Photoluminescence of sol–gel synthesized PZT powders

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez-Aranda, M.C. [Coordinación para la Innovación y Aplicación de la Ciencia y la Tecnología-Universidad Autónoma de San Luis Potosí, Av. Sierra Leona No.550,Col. Lomas 2a. sección, C.P. 78210 San Luis Potosí, SLP, México (Mexico); Calderón-Piñar, F. [Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México (Mexico); Facultad de Física/IMRE, San Lázaro y L, Universidad de la Habana, C.P. 10400 Habana (Cuba); Hernández-Landaverde, M.A. [Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México (Mexico); and others

    2016-11-15

    A wide band of photoluminescence (PL) emission in structurally disordered lead zirconate titanate (PZT) powders, prepared by sol–gel route, was observed at room temperature excited with a laser line (488 nm). Powders with PbZr{sub 0.53}Ti{sub 0.47}O{sub 3} nominal composition annealed at different temperatures were studied by X-ray diffraction, Raman spectroscopy, Luminescence, Diffuse Reflectance and Electronic Paramagnetic Resonance Spectroscopy (EPR). Our results indicate that the PL response can be associated to order–disorder degree in the perovskite structure, with the exception of samples annealed at low temperature, where a mixture of oxides precursorsГ—Ві phases was observed. Furthermore, in quasi-crystalline ordered samples (95% of crystallinity) a small generation of PL remains. In these experiments, the band gap increases with the formation of crystalline structure. EPR experiments were conducted in order to follow the evolution of paramagnetic species with thermal treatment from the mixture of oxides precursors to the perovskite phase and paramagnetic point defects were identified (Pb{sup +3} and Ti{sup +3}). EPR data suggest the presence of order–disorder within the lattice network. Paramagnetic species are similar in samples treated at 700 and 800 °C, nevertheless the emission intensity decreases by a factor of 6, indicating that the defects associated with PL are not paramagnetic at both temperatures.

  4. Photoluminescence from CdxHg1-xTe

    International Nuclear Information System (INIS)

    Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R

    2008-01-01

    We present important aspects of photoluminescence (PL) of Cd x Hg 1-x Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd 0.36 Hg 0.64 Te/Cd 0.61 Hg 0.39 Te multiple quantum well structure grown on a 4 μm thick Cd 0.36 Hg 0.64 Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above ∼200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to ∼200 K

  5. Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Rihani, J.; Sallet, V.; Yahyaoui, N.; Harmand, J.C.; Oueslati, M.; Chtourou, R.

    2009-01-01

    Self-assembled InAs quantum dots (QDs) on GaAs(0 0 1) substrate were grown by molecular beam epitaxy (MBE) at a growth temperature of 490 deg. C. Two different families of dots were observed in the atomic force microscopy (AFM) image and ambiguously identified in the photoluminescence (PL) spectra. Temperature-dependent PL study was carried out in the 8-270 K temperature range. The integrated-PL intensity behavior of the two QDs populations was fit with the help of a rate equations model. It is found that the evolutions of the integrated-PL intensity of the two QDs population were governed by two regimes. The first one occurs in the 8-210 K temperature range and reveals an unusual enhancement of the integrated-PL intensity of the larger QDs (LQDs) class. This was attributed to the carrier supplies from the smaller QDs (SQDs) class via the tunneling process. The second one occurs in the 210-270 K temperature range and shows a common quench of the PL signals of the two QDs families, reflecting the same thermal escape mechanism of carriers

  6. Photoluminescent properties of nanoporous anodic alumina doped with manganese ions

    Energy Technology Data Exchange (ETDEWEB)

    Gasenkova, I.V. [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Mukhurov, N.I., E-mail: n.mukhurov@ifanbel.bas-net.by [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Zhvavyi, S.P.; Kolesnik, E.E. [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Stupak, A.P. [B.I.Stepanov Institute of Physics of the National Academy of Sciences of Belarus, 68 Nezavisimosti Ave., Minsk 220072 (Belarus)

    2017-05-15

    The results are presented of a comparative study of photoluminescent (PL) properties of unalloyed and Mn-alloyed porous anodic alumina (PAA) subjected to annealing at temperatures in the range of ГђВў{sub a}=200–1300 °ГђВЎ. The possibility of alloying of PAA with metal atoms is illustrated through an example of Mn atoms, and the effect of this impurity on the optical properties of aluminum oxide is examined. Alloying of PAA with Mn ions leads to the formation of complex defects including manganese ions and oxygen vacancies. The difference observed in the spectral dependences of the PL intensity of alloyed and unalloyed specimens is explained by the change in the valence of manganese ions in the complex defects. A decrease has been discovered in the PL intensity of the PL bands and R-lines of Mn and Cr ions in the α-phase under prolonged UV-exposure of the alloyed samples.

  7. Rethinking the theoretical description of photoluminescence in compound semiconductors

    Science.gov (United States)

    Valkovskii, V.; Jandieri, K.; Gebhard, F.; Baranovskii, S. D.

    2018-02-01

    Semiconductor compounds, such as Ga(NAsP)/GaP or GaAsBi/GaAs, are in the focus of intensive research due to their unique features for optoelectronic devices. The optical spectra of compound semiconductors are strongly influenced by the random scattering potentials caused by compositional and structural disorder. The disorder potential is responsible for the red-shift (Stokes shift) of the photoluminescence (PL) peak and for the inhomogeneous broadening of the PL spectra. So far, the anomalous broadening of the PL spectra in Ga(NAsP)/GaP has been explained assuming two coexisting length scales of disorder. However, this interpretation appears in contradiction to the recently observed dependence of the PL linewidth on the excitation intensity. We suggest an alternative approach that describes the PL characteristics in the framework of a model with a single length scale of disorder. The price is the assumption of two types of localized states with different, temperature-dependent non-radiative recombination rates.

  8. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  9. Structure, microstructure and photoluminescence of nanocrystalline Ti-doped gahnite

    International Nuclear Information System (INIS)

    Vrankić, M.; Gržeta, B.; Mandić, V.; Tkalčec, E.; Milošević, S.; Čeh, M.; Rakvin, B.

    2012-01-01

    Highlights: ► Ti-doped gahnite samples with 0–11.6 at.% Ti were synthesized for the first time. ► The samples had crystallite size of 16.6–20.5 nm and lattice strain of 0.07–0.26%. ► Titanium entered the gahnite structure as Ti 4+ , substituting for octahedral Al 3+ . ► Ti-doped gahnite showed the UV absorption and blue emission under UV excitation. - Abstract: A series of Ti-doped ZnAl 2 O 4 (gahnite) samples with doping levels of 0, 1.8, 3.8, 5.4 and 11.6 at.% Ti in relation to Al were prepared by a sol–gel technique. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), EPR spectroscopy, UV–vis reflectance spectroscopy and photoluminescence (PL) studies. Diffraction patterns indicated that all samples were nanocrystalline, with a spinel-type structure, space group Fd3 ¯ m. Titanium doping of gahnite caused an increase of unit-cell parameter and diffraction line broadening. The structure of samples was refined by the Rietveld method, simultaneously with the analysis of diffraction line broadening. TEM investigations confirmed that samples had spinel-type structure, and showed that samples contained evenly shaped particles of about 20 nm in size. Ti-doped samples exhibited strong absorption at wavelength exc = 308 nm.

  10. Green–white electroluminescence and green photoluminescence of zinc complexes

    Energy Technology Data Exchange (ETDEWEB)

    Janghouri, Mohammad; Mohajerani, Ezeddin [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M.; Najafi, Ezzatollah [Department of Chemistry, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of)

    2014-10-15

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and {sup 1}H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq{sub 3} (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m{sup 2} at a current density 398.32 mA/cm{sup 2} with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex.

  11. Surface effects on the photoluminescence of Si quantum dots

    International Nuclear Information System (INIS)

    Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

    2009-01-01

    Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

  12. Electric Field-Dependent Photoluminescence in Multilayer Transition Metal Dichalcogenides

    Science.gov (United States)

    Stanev, T. K.; Henning, A.; Sangwan, V. K.; Speiser, N.; Stern, N. P.; Lauhon, L. J.; Hersam, M. C.; Wang, K.; Valencia, D.; Charles, J.; Kubis, T. C.

    Owing to interlayer coupling, transition metal dichalcogenides (TMDCs) such as MoS2 exhibit strong layer dependence of optical and electronic phenomena such as the band gap and trion and neutral exciton population dynamics. Here, we systematically measure the effect of layer number on the optical response of multilayer MoS2 in an external electric field, observing field and layer number dependent emission energy and photoluminescence intensity. These effects are studied in few (2-6) and bulk (11 +) layered structures at low temperatures. In MoS2\\ the observed layer dependence arises from several mechanisms, including interlayer charge transfer, band structure, Stark Effect, Fermi level changes, screening, and surface effects, so it can be challenging to isolate how these mechanisms impact the observables. Because it behaves like a stack of weakly interacting monolayers rather than multilayer or bulk, ReS2 provides a comparison to traditional TMDCs to help isolate the underlying physical mechanisms dictating the response of multilayers. This work is supported by the National Science Foundation MRSEC program (DMR-1121262), and the 2-DARE Grant (EFRI-1433510). N.P.S. is an Alfred P. Sloan Research Fellow.

  13. Origin of photoluminescence in β -G a2O3

    Science.gov (United States)

    Ho, Quoc Duy; Frauenheim, Thomas; Deák, Peter

    2018-03-01

    β -G a2O3 , a candidate material for power electronics and UV optoelectronics, shows strong room-temperature photoluminescence (PL). In addition to the three well-known bands of as-grown samples in the UV, blue, and green, also red PL was observed upon nitrogen doping. This raises the possibility of applying β -G a2O3 nanostructures as white phosphors. Using an optimized, Koopmans-compliant hybrid functional, we show that most intrinsic point defects, as well as substitutional nitrogen, act as deep acceptors, and each of the observed PL bands can be explained by electron recombination with a hole trapped in one of them. We suggest this mechanism to be general in wide-band-gap semiconductors which can only be doped n -type. Calculations on the nitrogen acceptor reproduce the observed red luminescence accurately. Earlier we have shown that not only the energy, but the polarization properties of the UV band can be explained by self-trapped hole states. Here we find that the blue band has its origin mainly in singly negative Ga-O divacancies, and the green band is caused dominantly by interstitial O atoms (with minor contribution of Ga vacancies to both). These assignments can explain the experimentally observed dependence of the PL bands on free-electron concentration and stoichiometry. The information provided here paves the way for the conscious tuning of light emission from β -G a2O3 .

  14. Photoluminescence properties of TiO{sub 2} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Chetibi, Loubna [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Busko, Tetiana; Kulish, Nikolay Polikarpovich [Kyiv National Taras Shevchenko University (Ukraine); Hamana, Djamel [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Chaieb, Sahraoui [Lawrence Berkeley National Laboratory (United States); Achour, Slimane, E-mail: achourslimane11@yahoo.fr [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria)

    2017-04-15

    Multi-walled carbon nanotube (MWCNT)-TiO{sub 2} nanofiber (NF) composites forming a layered nanostructure (MWCNTs/TiO{sub 2} NFs/Ti) were prepared by impregnation at low temperature. Room temperature photoluminescence (PL) of these nanostructures shows a broad intense band in the visible light range (∼450–600 nm). The origin of the PL emission which, mainly, resulted from surface oxygen vacancies and other defects was investigated. We studied the effect of MWCNT deposition on the PL of TiO{sub 2} NFs where the MWCNTs can act as an electron reservoir of electrons emitted from TiO{sub 2} nanofibers when irradiated with UV light. The combination of MWCNTs and TiO{sub 2} results in quenching of TiO{sub 2} luminescence in the visible range. In addition, the prepared surface of MWCNTs-TiO{sub 2} was irradiated with Ti{sup +} ions using irradiation energy of 140 keV and doses of 10{sup 13} ions/cm{sup 2}. Also, this treatment induced the PL intensity quenching due to the generation of non-radiative additional levels inside the band gap.

  15. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  16. Temperature-dependent photoluminescence from CdS/Si nanoheterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yue Li; Li, Yong; Ji, Peng Fei; Zhou, Feng Qun; Sun, Xiao Jun; Yuan, Shu Qing; Wan, Ming Li [Pingdingshan University, Department of Physics, Solar New Energy Research Center, Pingdingshan (China); Ling, Hong [North China University of Water Resources and Electric Power, Department of Mathematics and Information Science, Zhengzhou (China)

    2016-12-15

    CdS/Si nanoheterojunctions have been fabricated by growing nanocrystal CdS (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) through using a chemical bath deposition method. The nanoheterojunctions have been constructed by three layers: the upper layer being a nc-CdS thin films, the intermediate layer being the interface region including nc-CdS and nanocrystal silicon (nc-Si), and the bottom layer being nc-Si layer grown on sc-Si substrate. The room temperature and temperature-dependent photoluminescence (PL) have been measured and analyzed to provide some useful information of defect states. Utilizing the Gauss-Newton fitting method, five emission peaks from the temperature-dependent PL spectra can be determined. From the high energy to low energy, these five peaks are ascribed to the some luminescence centers which are formed by the oxygen-related deficiency centers in the silicon oxide layer of Si-NPA, the band gap emission of nc-CdS, the transition from the interstitial cadmium (I{sub Cd}) to the valence band, the recombination from I{sub Cd} to cadmium vacancies (V{sub Cd}), and from sulfur vacancies (V{sub s}) to the valence band, respectively. Understanding of the defect states in the CdS/Si nanoheterojunctions is very meaningful for the performance of devices based on CdS/Si nanoheterojunctions. (orig.)

  17. Band-edge photoluminescence in CdTe

    International Nuclear Information System (INIS)

    Horodysky, P.; Grill, R.; Hlidek, P.

    2006-01-01

    Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

    Directory of Open Access Journals (Sweden)

    Brian Ford

    2017-04-01

    Full Text Available The following study focuses on the photoluminescence (PL enhancement of chemically synthesized silicon oxycarbide (SiCxOy thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD, and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2 ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield.

  19. Optical modelling of photoluminescence emitted by thin doped films

    International Nuclear Information System (INIS)

    Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

    2011-01-01

    Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

  20. Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)

    2009-11-15

    In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.

  1. Plasmon mode excitation and photoluminescence enhancement on silver nanoring

    Science.gov (United States)

    Kuchmizhak, Aleksandr A.; Gurbatov, Stanislav O.; Kulchin, Yuri N.; Vitrik, Oleg B.

    2015-12-01

    We demonstrate a simple and high-performance laser-assisted technique for silver nanoring fabrication, which includes the ablation of the Ag film by focused nanosecond pulses and subsequent reactive ion polishing. The nanoring diameter and thickness can be controlled by optimizing both the pulse energy and the metal film thickness at laser ablation step, while the subsequent reactive ion polishing provides the ability to fabricate the nanoring with desirable height. Scattering patterns of s-polarized collimated laser beam obliquely illuminating the nanoring demonstrate the focal spot inside the nanoring shifted from its center at a distance of ~0.57Rring. Five-fold enhancement of the photoluminescence signal from the Rhodamine 6G organic dye near the Ag nanoring was demonstrated. This enhancement was attributed to the increase of the electromagnetic field amplitude near the nanoring surface arising from excitation of the multipole plasmon modes traveling along the nanoring. This assumption was confirmed by dark-field back-scattering spectrum of the nanoring measured under white-light illumination, as well as by supporting finite-difference time-domain simulations.

  2. Angle-resolved photoluminescence spectrum of a uniform phosphor layer

    Science.gov (United States)

    Fujieda, Ichiro; Ohta, Masamichi

    2017-10-01

    A photoluminescence spectrum depends on an emission angle due to self-absorption in a phosphor material. Assuming isotropic initial emission and Lambert-Beer's law, we have derived simple expressions for the angle-resolved spectra emerging from the top and bottom surfaces of a uniform phosphor layer. The transmittance of an excitation light through the phosphor layer can be regarded as a design parameter. For a strongly-absorbing phosphor layer, the forward flux is less intense and more red-shifted than the backward flux. The red-shift is enhanced as the emission direction deviates away from the plane normal. When we increase the transmittance, the backward flux decreases monotonically. The forward flux peaks at a certain transmittance value. The two fluxes become similar to each other for a weakly-absorbing phosphor layer. We have observed these behaviors in experiment. In a practical application, self-absorption decreases the efficiency of conversion and results in angle-dependent variations in chromaticity coordinates. A patterned phosphor layer with a secondary optical element such as a remote reflector alleviates these problems.

  3. Green–white electroluminescence and green photoluminescence of zinc complexes

    International Nuclear Information System (INIS)

    Janghouri, Mohammad; Mohajerani, Ezeddin; Amini, Mostafa M.; Najafi, Ezzatollah

    2014-01-01

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and 1 H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq 3 (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m 2 at a current density 398.32 mA/cm 2 with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex

  4. Europium polyoxometalates encapsulated in silica nanoparticles - characterization and photoluminescence studies

    Energy Technology Data Exchange (ETDEWEB)

    Neves, Cristina S.; Granadeiro, Carlos M.; Cunha-Silva, Luis; Eaton, Peter; Balula, Salete S.; Pereira, Eulalia [REQUIMTE/Departamento de Quimica e Bioquimica, Faculdade de Ciencias, Universidade do Porto (Portugal); Ananias, Duarte [CICECO, Departamento de Quimica, Universidade de Aveiro (Portugal); Gago, Sandra [REQUIMTE, Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa, Monte de Caparica (Portugal); Feio, Gabriel [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa, Monte de Caparica (Portugal); Carvalho, Patricia A. [ICEMS/Departamento de Bioengenharia, Instituto Superior Tecnico, Lisboa (Portugal)

    2013-06-15

    The incorporation of europium polyoxometalates into silica nanoparticles can lead to a biocompatible nanomaterial with luminescent properties suitable for applications in biosensors, biological probes, and imaging. Keggin-type europium polyoxometalates Eu(PW{sub 11}){sub x} (x = 1 and 2) with different europium coordination environments were prepared by using simple methodologies and no expensive reactants. These luminescent compounds were then encapsulated into silica nanoparticles for the first time through the water-in-oil microemulsion methodology with a nonionic surfactant. The europium polyoxometalates and the nanoparticles were characterized by using several techniques [FTIR, FT-Raman, {sup 31}P magic angle spinning (MAS) NMR, and TEM/energy-dispersive X-ray spectroscopy (TEM-EDS), AFM, dynamic light scattering (DLS), and inductively coupled plasma MS (ICP-MS) analysis]. The stability of the material and the integrity of the europium compounds incorporated were also examined. Furthermore, the photoluminescence properties of the Eu(PW{sub 11}){sub x} rate at SiO{sub 2} nanomaterials were evaluated and compared with those of the free europium polyoxometalates. The silica surface of the most stable nanoparticles was successfully functionalized with appropriate organosilanes to enable the covalent binding of oligonucleotides. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Femtosecond transient photoluminescence of the substituted poly(diphenylacetulene)s.

    Science.gov (United States)

    Piskun, N. V.; Wang, D. K.; Lim, H.; Epstein, A. J.; Vanwoerkom, L. D.; Gustafson, T. L.

    2000-03-01

    We present the results of a femtosecond transient photoluminescence (PL) study of solutions of two derivatives of substituted poly(diphenylacetylene) using an up-conversion technique. n-Butyl (nBu) and p-carbazole (Cz) substituted poly(diphenylacetylene), PDPA-nBu and PDPA-Cz respectively, have band gaps determined by maxima in the slope of absorption vs. energy of 2.75 eV and 2.63 eV. The steady state emission peaks are at 2.4 eV for PDPA-nBu and at 2.3 eV for PDPA-Cz respectively. The PL peak for PDPA-Cz is red shifted in comparison to the PL peak for PDPA-nBu. Roles of phenyl groups, electron donating effect of the carbazole side units and planarity of the backbone are discussed. Exciting at 3.1 eV, the fs PL shows a faster decay for PDPA-Cz than that for PDPA-nBu, in accord with the decrease of PL quantum efficiency of PDPA-Cz. The 200 fs - 80 ps PL(t) agrees with ~1 ns lifetime. The PDPA-Cz has larger red shift in the 0.2-20 ps time frame. The origin of that shift will be discussed. This work is supported in part by ONR.

  6. Inorganic pigments doped with tris(pyrazol-1-yl)borate lanthanide complexes: A photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Gheno, Giulia, E-mail: giulia.gheno@unive.it [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca’ Foscari di Venezia, Dorsoduro 2137, 30123 Venezia (Italy); Bortoluzzi, Marco; Ganzerla, Renzo [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca’ Foscari di Venezia, Dorsoduro 2137, 30123 Venezia (Italy); Enrichi, Francesco [CIVEN, Coordinamento Interuniversitario Veneto per le Nanotecnologie, Via delle Industrie 5, 30175 Marghera, Venezia (Italy)

    2014-01-15

    The inorganic pigments malachite, Egyptian blue, Ercolano blue and chrome yellow have been doped with the neutral homoleptic Ln(III) complex Ln(Tp){sub 3} (Ln=Eu, Tb; Tp=hydrotris(pyrazol-1-yl)borate) in the presence of arabic gum or acrylic emulsion as binders, in order to obtain photoluminescent materials of interest for cultural heritage restoration. The doped pigments have shown emissions associated to f–f transitions in the visible range upon excitation with UV light. Thermal and UV-light ageings have been carried out. In all the cases the photoluminescent behaviour is maintained, but in the cases of acrylic-based paints emission spectra and lifetimes are strongly influenced by thermal treatments. The choice of binder and pigments influences the photoluminescent behaviour of the corresponding film paints. -- Highlights: • Inorganic pigments doped with photoluminescent lanthanide complexes. • Hydrotris(pyrazol-1-yl)borate (Tp) as antenna-ligand for Eu(III) and Tb(III). • Emission associated to f–f transitions upon excitation with UV light. • Photoluminescence of paints influenced by the choice of binder and pigments. • Photoluminescence after ageing depending upon the type of binder.

  7. Structure and photoluminescence of films composed of carbon nanoflakes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi, E-mail: wangyi@cqut.edu.cn [College of Mechanical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054, P R China (China); Li, Lin [College of Chemistry, Chongqing Normal University, Chongqing 401331, P R China (China); Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005, P R China (China); He, Chunlin [Liaoning Provincial Key Laboratory of Advanced Materials, Shenyang University, Shenyang 110044, P R China (China)

    2015-05-15

    Carbon nanoflake films (CNFFs) were directly synthesized by plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscope, transmission electron microscope, micro-Raman spectroscope, X-ray photoelectron spectroscope and Fourier transform infrared spectroscope indicate that the CNFFs are composed of bending carbon nanoflakes with the hydrocarbon and hydroxyl functional groups, and the carbon nanoflakes become thin in a long deposition time. The structural change of carbon nanoflakes is related to the formation of structural units and the aggregation of hydrocarbon radicals near the carbon nanoflakes. Moreover, the photoluminescence (PL) properties of CNFFs were studied in a Ramalog system and a PL spectroscope. The PL results indicate that the PL intensity of CNFFs is lowered with the increase of thickness of CNFFs. The lowering of PL intensity for the thick CNFFs originates from the effect of more dangling bonds in the CNFFs. In addition, we studied the structural difference of carbon nanoflakes grown by different CVD systems and the PL difference of carbon nanoflakes in different measurement systems. The results achieved here are important to control the growth and structure of graphene-based materials and fabricate the optoelectronic devices related to carbon-based materials. - Highlights: • Carbon nanoflake films (CNFFs) were synthesized by PEHFCVD. • The structure of CNFFs is related to the aggregation of carbon hydrocarbon radicals. • The PL intensity of CNFFs is lowered with the thickness increase of CNFFs. • The change of PL intensity of CNFFs is due to the dangling bonds in CNFFs. • The widening of PL bands of CNFFs results from the diversity of carbon nanofalkes.

  8. Photoluminescence and lasing properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

    2010-01-01

    In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

  9. Photoluminescence and thermally stimulated luminescence characteristics of rice flour

    International Nuclear Information System (INIS)

    Murthy, K.V.R.; Rey, L.; Belon, P.

    2007-01-01

    The present paper reports the photoluminescence (PL) and the thermoluminescence (TL) characteristics of rice flour. This study is undertaken to consider storage of rice at low temperature and irradiation for disinfection. From the Indian market a few varieties of rice was bought. All the samples of rice was ground using an agate motor and pestle. Thereafter, the powder was sieved to the size of 140 μm using appropriate sieves. When comparing the PL characteristics of the different rice powders studied, it is interesting to note that the PL emission wavelength (around 445 nm) is nearly same for all the rice varieties studied even though the excitation wave length is different. TL characteristics are studied in the temperature range 77-230 K as well as 300-700 K. TL is recorded for the virgin samples and also on irradiation of the same by exposing it to X-ray at 77 K, beta at 300 K and gamma at 77 K. The two varieties are given an X-ray dose of 1 kGy. The TL is recorded for 200 mg rice powder. The TL displayed for the as-received 1 kGy X- ray dose peak is around 160 K with a broad shoulder around 120 K. Basmati variety is given a gamma dose of 12.5 kGy and the TL and TL emission is recorded. It is seen that a well-defined low-temperature TL peak around 119 K and a hump around 145 K are observed in the sample. The TL emission is around 430 nm.The TL peak observed in most of the rice samples above room temperature is around 558 K

  10. Effect of illumination on photoluminescence properties of porous silicon

    International Nuclear Information System (INIS)

    Naddaf, M.; Hamadeh, H.

    2008-11-01

    Porous silicon (PS) layers were formed by photo-electrochemical etching of both p-type and n-type single crystal wafers in HF based solution. During the etching process, the silicon wafer was illuminated by a halogen lamp light guided by an optical fiber through a monochromator or diode lasers at different power density and wavelengths (480,533,580 and 635 nm). The optical and structural properties of the prepared PS samples have been investigated by using temperature dependent photoluminescence (PL) spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, contact angle (CA) measurements, optical microscope and atomic force microscope (AFM). Beside the strong red-yellow PL band, a blue PL band has been observed only in the PS samples formed under the illumination with low power and short wavelengths (480-580 nm) light. In the near infrared (IR) spectral range, a new PL band at 850 nm was observed in p-type PS samples, which prepared under darkness or illumination with 635 nm of low power light. Temperature dependent PL measurements showed that, in contrast to the main IR PL band at around 1100 nm, the intensity of this new band increases on increasing the temperature. These changes in the PL properties was correlated with the illumination induced-structural and morphological modifications in the PS skeleton. In particular, the FTIR analysis showed that the chemical groups and bonds constituting the PS skeleton, such as, SiH, SiO bonds and silanol SiOH group play key role in deciding the PL emission intensity and blue shift. The study proved that the illumination parameters during the photo-electrochemical etching process can be utilized for tailoring a porous layer with novel optical and structural properties. (Authors)

  11. Modeling of photoluminescence in laser-based lighting systems

    Science.gov (United States)

    Chatzizyrli, Elisavet; Tinne, Nadine; Lachmayer, Roland; Neumann, Jörg; Kracht, Dietmar

    2017-12-01

    The development of laser-based lighting systems has been the latest step towards a revolution in illumination technology brought about by solid-state lighting. Laser-activated remote phosphor systems produce white light sources with significantly higher luminance than LEDs. The weak point of such systems is often considered to be the conversion element. The high-intensity exciting laser beam in combination with the limited thermal conductivity of ceramic phosphor materials leads to thermal quenching, the phenomenon in which the emission efficiency decreases as temperature rises. For this reason, the aim of the presented study is the modeling of remote phosphor systems in order to investigate their thermal limitations and to calculate the parameters for optimizing the efficiency of such systems. The common approach to simulate remote phosphor systems utilizes a combination of different tools such as ray tracing algorithms and wave optics tools for describing the incident and converted light, whereas the modeling of the conversion process itself, i.e. photoluminescence, in most cases is circumvented by using the absorption and emission spectra of the phosphor material. In this study, we describe the processes involved in luminescence quantum-mechanically using the single-configurational-coordinate diagram as well as the Franck-Condon principle and propose a simulation model that incorporates the temperature dependence of these processes. Following an increasing awareness of climate change and environmental issues, the development of ecologically friendly lighting systems featuring low power consumption and high luminous efficiency is imperative more than ever. The better understanding of laser-based lighting systems is an important step towards that aim as they may improve on LEDs in the near future.

  12. Effect of illumination on photoluminescence properties of porous silicon

    International Nuclear Information System (INIS)

    Naddaf, M.; Hamadeh, H.

    2009-01-01

    Porous silicon (PS) layers were formed by photo-electrochemical etching of both p-type and n-type single crystal wafers in HF based solution. During the etching process, the silicon wafer was illuminated by a halogen lamp light guided by an optical fiber through a monochromator or diode lasers at different power density and wavelengths (480,533,580 and 635 nm). The optical and structural properties of the prepared PS samples have been investigated by using temperature dependent photoluminescence (PL) spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, contact angle (CA) measurements, optical microscope and atomic force microscope (AFM). Beside the strong red-yellow PL band, a blue PL band has been observed only in the PS samples formed under the illumination with low power and short wavelengths (480-580 nm) light. In the near infrared (IR) spectral range, a new PL band at 850 nm was observed in p-type PS samples, which prepared under darkness or illumination with 635 nm of low power light. Temperature dependent PL measurements showed that, in contrast to the main IR PL band at around 1100 nm, the intensity of this new band increases on increasing the temperature. These changes in the PL properties was correlated with the illumination induced-structural and morphological modifications in the PS skeleton. In particular, the FTIR analysis showed that the chemical groups and bonds constituting the PS skeleton, such as, SiH, SiO bonds and silanol SiOH group play key role in deciding the PL emission intensity and blue shift. The study proved that the illumination parameters during the photo-electrochemical etching process can be utilized for tailoring a porous layer with novel optical and structural properties. (Authors)

  13. Enormous enhancement of ZnO nanorod photoluminescence

    International Nuclear Information System (INIS)

    Wang, Y.H.; Duan, W.J.; Wu, Z.L.; Zheng, D.; Zhou, X.W.; Zhou, B.Y.; Dai, L.J.; Wang, Y.S.

    2012-01-01

    ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation. - Highlights: ► ZnO nanorod arrays were grown on quartz slices in solution at 90 °C. ► The nanorods were capped by ZnO:Mg layers to form core/shell structures. ► ZnO:MgO shells suppress the green emission and enhance the UV emission intensity by 38 times. ► The enhancement depends on the Mg content in the shells. ► Exposing the nanorods to 325 laser beam improves the UV emission efficiently. ► Capping and 325 nm laser beam irradiation could enhance the nanorod UV emission intensity by 71 times.

  14. Uv Laser Excitation for Ultra-Sensitive Photoluminescent Dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Kastner, J.; Eggenberger, D.; Longnecker, A. [Argonne National Laboratory, Argonne, IL (United States); King, D.; Schutt, D. [Radiation Laboratory, University of Notre Dame, South Bend, IN (United States)

    1967-03-15

    The factor which has limited the sensitivity of photoluminescent dosimetry has been the ''pre-dose'' background which is stimulated during readout by the usual continuous ultra-violet (UV) exposure. The signal-to-noise ratio has only been partially optimized by the selective choice of filters and optical geometry. A microdosimetric system has been conceived and investigated which is potentially capable of sensing extremely low radiation doses (of the order of microrads). This system depends on the little-known fact that the decay time for the visible luminescence, which is a measure of the absorbed dose, is at least ten times longer than the decay of the indistinguishable visible fluorescence (to UV) which is an inherent characteristic of unexposed silver phosphate glasses. The system consists of UV, 3500A, laser beam, with a Pockels cell so that it has complete cut-off in intensity in the order of nanoseconds, and gating circuitry to open the visible light-sensing photomultiplier at a sufficient time delay to prevent it from sensing the ultra-violet or the pre-dose fluorescence which decays within the order of 100 nanoseconds. In this way the signal-to-noise ratio can be vastly improved upon that obtainable by optical means. With this system the authors were easily able to measure quantitatively one milliroentgen of cobalt-60 exposure. They are of the opinion that further improvement in this system should enable them to do track visualization and/or in vivo biological microdosimetry with a spatial resolution of the order of ten microns. (author)

  15. Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

    International Nuclear Information System (INIS)

    Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

    2006-01-01

    Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Study of low noise preamplifier systems for use with room temperature mercuric iodide (HgI2) x-ray detectors

    International Nuclear Information System (INIS)

    Iwanczyk, J.S.; Dabrowski, A.J.; Huth, G.C.; Del Duca, A.; Schenpple, W.

    1980-01-01

    An analysis of different preamplification systems for use with room temperature mercuric iodide x-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution of 295 eV (FWHM) for Fe-55 source (5.9 keV) and 225 eV (FWHM) for the pulser have been obtained with both the detector and the input FET at room temperature using the pulsed-light feedback preamplifier. It has been shown that cooling the input FET using a small Peltier element allows the energy resolution to be improved up to 25%

  17. Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2016-01-01

    Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

  18. A Review of the Synthesis and Photoluminescence Properties of Hybrid ZnO and Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Protima Rauwel

    2016-01-01

    Full Text Available Photoluminescent ZnO carbon nanomaterials are an emerging class of nanomaterials with unique optical properties. They each, ZnO and carbon nanomaterials, have an advantage of being nontoxic and environmentally friendly. Their cost-effective production methods along with simple synthesis routes are also of interest. Moreover, ZnO presents photoluminescence emission in the UV and visible region depending on the synthesis routes, shape, size, deep level, and surface defects. When combined with carbon nanomaterials, modification of surface defects in ZnO allows tuning of these photoluminescence properties to produce, for example, white light. Moreover, efficient energy transfer from the ZnO to carbon nanostructures makes them suitable candidates not only in energy harvesting applications but also in biosensors, photodetectors, and low temperature thermal imaging. This work reviews the synthesis and photoluminescence properties of 3 carbon allotropes: carbon quantum or nanodots, graphene, and carbon nanotubes when hybridized with ZnO nanostructures. Various synthesis routes for the hybrid materials with different morphologies of ZnO are presented. Moreover, differences in photoluminescence emission when combining ZnO with each of the three different allotropes are analysed.

  19. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    International Nuclear Information System (INIS)

    Liu Tiancai; Huang Zhenli; Wang Haiqiao; Wang Jianhao; Li Xiuqing; Zhao Yuandi; Luo Qingming

    2006-01-01

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of ∼0.11 nm K -1 . And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science

  20. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Alejo, T. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Paulo, Pedro M.R. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Merchán, M.D. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Garcia-Fernandez, Emilio; Costa, Sílvia M.B. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Velázquez, M.M., E-mail: mvsal@usal.es [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain)

    2017-03-15

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  1. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    Energy Technology Data Exchange (ETDEWEB)

    Liu Tiancai [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Huang Zhenli [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Haiqiao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Jianhao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Li Xiuqing [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zhao Yuandi [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)]. E-mail: zydi@mail.hust.edu.cn; Luo Qingming [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2006-02-10

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of {approx}0.11 nm K{sup -1}. And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science.

  2. Bragg superlattice for obtaining individual photoluminescence of diamond color centers in dense 3D ensembles

    Science.gov (United States)

    Kukushkin, V. A.

    2017-10-01

    A way to significantly increase the spatial resolution of the color center photoluminescence collection in chemically vapor-deposited (CVD) diamond at a fixed exciting beam focal volume is suggested. It is based on the creation of a narrow waveguide for the color center photoluminescence with a small number of allowed vertical indices of guided modes. The waveguide is formed between the top surface of a CVD diamond film and an underlaid mirror—a Bragg superlattice made of interchanging high- and low boron-doped layers of CVD diamond. The guided color center photoluminescence is extracted through the top surface of a CVD diamond film with the frustrated total internal reflection method. According to the results of simulation made for a case when color centers are nitrogen-vacancy (NV) centers, the suggested way allows to increase the maximal value of the NV center concentration still compatible with selective collection of their photoluminescence by several times at a fixed exciting beam focal volume. This increase is provided without the deterioration of the NV center photoluminescence collection efficiency.

  3. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    International Nuclear Information System (INIS)

    Alejo, T.; Paulo, Pedro M.R.; Merchán, M.D.; Garcia-Fernandez, Emilio; Costa, Sílvia M.B.; Velázquez, M.M.

    2017-01-01

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  4. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  5. Defect states in microcrystalline silicon probed by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Merdzhanova, T.; Carius, R.; Klein, S.; Finger, F.; Dimova-Malinovska, D.

    2006-01-01

    Photoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (μc-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T S ), which influences mainly the defect density, and silane concentration (SC), as Key parameter to control the microstructure of the material were varied. In high quality μc-Si:H films (T S = 185-200 deg. C) a PL band ('μc'-Si-band) is observed at ∼ 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In μc-Si:H films prepared at higher T S (> 300 deg. C), an additional PL band at ∼ 0.7 eV with a width of ∼ 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at ∼ 0.7 eV with increasing SC in contrast to the observed shift of the 'μc'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'μc'-Si-band shifts to lower energies (ii) a much weaker quenching for the 0.7 eV band compared to the 'μc'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in μc-Si:H is assigned tentatively to defect-related transitions in the crystalline phase

  6. Probing the interlayer coupling of twisted bilayer MoS2 using photoluminescence spectroscopy.

    Science.gov (United States)

    Huang, Shengxi; Ling, Xi; Liang, Liangbo; Kong, Jing; Terrones, Humberto; Meunier, Vincent; Dresselhaus, Mildred S

    2014-10-08

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for optoelectronic devices due to its strong photoluminescence emission. In this work, the photoluminescence of twisted bilayer MoS2 is investigated, revealing a tunability of the interlayer coupling of bilayer MoS2. It is found that the photoluminescence intensity ratio of the trion and exciton reaches its maximum value for the twisted angle 0° or 60°, while for the twisted angle 30° or 90° the situation is the opposite. This is mainly attributed to the change of the trion binding energy. The first-principles density functional theory analysis further confirms the change of the interlayer coupling with the twisted angle, which interprets our experimental results.

  7. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Oluwafemi, O.S.; Dangbegnon, J.K.; Botha, J.R.

    2012-01-01

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 °C is hereby reported. By annealing in O 2 environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  8. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Dangbegnon, J.K. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R., E-mail: Reinhardt.Botha@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 Degree-Sign C is hereby reported. By annealing in O{sub 2} environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  9. UV and air stability of high-efficiency photoluminescent silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

    2014-12-30

    The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

  10. Tailoring surface groups of carbon quantum dots to improve photoluminescence behaviors

    International Nuclear Information System (INIS)

    Tian, Ruixue; Hu, Shengliang; Wu, Lingling; Chang, Qing; Yang, Jinlong; Liu, Jun

    2014-01-01

    Highlights: • We develop a facile and green method to tailor surface groups. • Photoluminescence behaviors of carbon quantum dots are improved by tailoring their surface groups. • Highly luminescent efficiency is produced by amino-hydrothermal treatment of reduced carbon quantum dots. - Abstract: A facile and green method to tailor surface groups of carbon quantum dots (CQDs) is developed by hydrothermal treatment in an autoclave. The photoluminescence (PL) behaviors of CQDs depend on the types of surface groups. Highly efficient photoluminescence is obtained through amino-hydrothermal treatment of the CQDs reduced by NaBH 4 . The effects of surface groups on PL behavior are attributed to the degrees of energy band bending induced by surface groups

  11. Effect of ion indium implantation on InP photoluminescence spectra

    International Nuclear Information System (INIS)

    Pyshnaya, N.B.; Radautsan, S.I.; Tiginyanu, I.M.; Ursaki, V.V.

    1988-01-01

    Photoluminescence spectra of indium phosphide single crystals implanted by indium after annealing under the protective Al 2 O 3 film in a nitrogen flow are investigated. As a result of implantation and annealing in photoluminescence spectra of crystals there appeared a new band with the maximum at 1.305 eV (T=6 K) which is connected with the free electron transition at the level of the antistructure defect of In p - lying by 0.115 eV above the valent zone ceiling. With large doses of the implanted indium in the photoluminescence spectrum a long-wave band with the maximum at 0.98-0.99 eV is also observed caused, apparently, by the strong lattice disorder

  12. Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

    Science.gov (United States)

    Thuy, Ung Thi Dieu; Thuy, Pham Thi; Liem, Nguyen Quang; Li, Liang; Reiss, Peter

    2010-02-01

    This letter reports on the comparative photoluminescence study of InP/ZnS quantum dots in the close-packed solid state and in colloidal solution. The steady-state photoluminescence spectrum of the close-packed InP/ZnS quantum dots peaks at a longer wavelength than that of the colloidal ones. Time-resolved photoluminescence shows that the close-packed quantum dots possess a shorter luminescence decay time and strongly increased spectral shift with the time delayed from the excitation moment in comparison with the colloidal ones. The observed behavior is discussed on the basis of energy transfer enabled by the short interparticle distance between the close-packed quantum dots.

  13. Enhancing the Photoluminescence Emission of Conjugated MEH-PPV by Light Processing

    KAUST Repository

    Botiz, Ioan

    2014-04-09

    We show here that treatment of thin films of conjugated polymers by illumination with light leads to an increase of the intensity of their photoluminescence by up to 42%. The corresponding enhancement of absorbance was much less pronounced. We explain this significant enhancement of photoluminescence by a planarization of the conjugated polymer chains induced by photoexcitations even below the glass transition temperature, possibly due to an increased conjugation length. Interestingly, the photoluminescence remains at the enhanced level for more than 71 h after treatment of the films by illumination with light, likely due to the fact that below the glass transition temperature no restoring force could return the conjugated chains into their initial conformational state. © 2014 American Chemical Society.

  14. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  15. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

  16. Photoluminescence study of carbon dots from ginger and galangal herbs using microwave technique

    Science.gov (United States)

    Isnaeni; Rahmawati, I.; Intan, R.; Zakaria, M.

    2018-03-01

    Carbon dots are new type of fluorescent nanoparticle that can be synthesis easily from natural sources. We have synthesized carbon dots from ginger and galangal herbs using microwave technique and studied their optical properties. We synthesized colloidal carbon dots in water solvent by varying microwave processing time. UV-Vis absorbance, photoluminescence, time-resolved photoluminescence, and transmission electron microscope were utilized to study properties of carbon dots. We found that microwave processing time significantly affect optical properties of synthesized carbon dots. UV-Vis absorbance spectra and time-resolved photoluminescence results show that luminescent of carbon dots is dominated by recombination process from n-π* surface energy level. With further development, these carbon dots are potential for several applications.

  17. Porosity and thickness effect of porous silicon layer on photoluminescence spectra

    Science.gov (United States)

    Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

    2018-05-01

    The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

  18. Photoluminescence properties of PZT 52/48 synthesized by microwave hydrothermal method using PVA with template

    Energy Technology Data Exchange (ETDEWEB)

    Teixeira, G.F., E-mail: guilmina@hotmail.com [Instituto de Quimica, Universidade Estadual Paulista, Departamento de Bioquimica e Tecnologia Quimica, Rua Francisco Degni s/n, Quitandinha, 14800-900 Araraquara, SP (Brazil); Gasparotto, G. [Instituto de Quimica, Universidade Estadual Paulista, Departamento de Bioquimica e Tecnologia Quimica, Rua Francisco Degni s/n, Quitandinha, 14800-900 Araraquara, SP (Brazil); Paris, E.C. [Empresa Brasileira de Pesquisa Agropecuaria, Embrapa Instrumentacao, Rua XV de novembro, 1452, Centro, 13.569-970 Sao Carlos, SP (Brazil); Zaghete, M.A.; Longo, E.; Varela, J.A. [Instituto de Quimica, Universidade Estadual Paulista, Departamento de Bioquimica e Tecnologia Quimica, Rua Francisco Degni s/n, Quitandinha, 14800-900 Araraquara, SP (Brazil)

    2012-01-15

    Lead Titanate Zirconate (PZT) perovskite powders were synthesized by microwave hydrothermal method (M-H) at 180 {sup o}C for different time periods (2, 4, 8 and 12 h) with the presence of aqueous polyvinyl alcohol (PVA) solution 0.36 g L{sup -1}. The X-Ray diffraction (XRD), SE-FEG as well as the measurements of photoluminescence (PL) emission were used for monitoring the formation of a perovskite phase with random polycrystalline distortion in the structure. Emission spectra with fixed excitation wavelength of 350 nm showed higher value for the powder obtained after undergoing 8 h of treatment. A theoretical model derived from previous calculations allows us to discuss the origin of photoluminescence emission in the powders, which can be further related to the local disorder in the network of both ZrO{sub 6} and TiO{sub 6} octahedral, and dodecahedral PbO{sub 12}. The new morphology initially observed from the PZT perovskite crystal growth bearing the shape of fine plates is found to be directly related to photoluminescence emission with energy lower than that present in the PZT with cube-like morphology that emits in 560 nm. - Highlights: > This work details the efficiency of microwave hydrothermal synthesis in obtaining PZT powders. > PVA is used as a crystallization agent of PZT particles. > PZT particles presented photoluminescent (PL) behavior. > There aren't previous reports of photoluminescent PZT obtained by microwave hydrothermal synthesis. > Photoluminescence is one more interesting property for technological applications this material.

  19. The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

    International Nuclear Information System (INIS)

    Briones Cruz, Almira; Shen Qing; Toyoda, Taro

    2006-01-01

    Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

  20. Photoluminescence studies on Cd(1-x)Zn(x)S:Mn2+ nanocrystals.

    Science.gov (United States)

    Sethi, Ruchi; Kumar, Lokendra; Pandey, A C

    2009-09-01

    Highly monodispersed, undoped and doped with Mn2+, binary and ternary (CdS, ZnS, Cd(1-x)Zn(x)S) compound semiconductor nanocrystals have been synthesized by co-precipitation method using citric acid as a stabilizer. As prepared sample are characterized by X-ray diffraction, Small angle X-ray scattering, Transmission electron microscope, Optical absorption and Photoluminescence spectroscopy, for their optical and structural properties. X-ray diffraction, Small angle X-ray scattering and Transmission electron microscope results confirm the preparation of monodispersed nanocrystals. Photoluminescence studies show a significant blue shift in the wavelength with an increasing concentration of Zn in alloy nanocrystals.

  1. Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

    2009-02-25

    ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

  2. Enhanced photoluminescence from single nitrogen-vacancy defects in nanodiamonds coated with phenol-ionic complexes.

    Science.gov (United States)

    Bray, Kerem; Previdi, Rodolfo; Gibson, Brant C; Shimoni, Olga; Aharonovich, Igor

    2015-03-21

    Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and bio-labeling. In this work we demonstrate a robust approach to achieve an encapsulation of individual nanodiamonds with phenol-ionic complexes that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation reduces the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications.

  3. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  4. Photoluminescence under high-electric field of PbS quantum dots

    Directory of Open Access Journals (Sweden)

    B. Ullrich

    2012-12-01

    Full Text Available The effect of a laterally applied electric field (≤10 kV/cm on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.

  5. One-step microwave synthesis of photoluminescent carbon nanoparticles from sodium dextran sulfate water solution

    Science.gov (United States)

    Kokorina, Alina A.; Goryacheva, Irina Y.; Sapelkin, Andrei V.; Sukhorukov, Gleb B.

    2018-04-01

    Photoluminescent (PL) carbon nanoparticles (CNPs) have been synthesized by one-step microwave irradiation from water solution of sodium dextran sulfate (DSS) as the sole carbon source. Microwave (MW) method is very simple and cheap and it provides fast synthesis of CNPs. We have varied synthesis time for obtaining high luminescent CNPs. The synthesized CNPs exhibit excitation-dependent photoluminescent. Final CNPs water solution has a blue- green luminescence. CNPs have low cytotoxicity, good photostability and can be potentially suitable candidates for bioimaging, analysis or analytical tests.

  6. Giant Enhancement of Small Photoluminescent Signals on Glass Surfaces Covered by Self-Assembled Silver Nanorings.

    Science.gov (United States)

    Sousanis, A; Poulopoulos, P; Karoutsos, V; Trachylis, D; Politis, C

    2017-02-01

    Self-assembled nanostructures with the shape of nanospheres or nanorings were formed after annealing of ultrathin Ag films grown on glass, in a furnace with air at 460 °C. Intense localized surface plasmon resonances were recorded for these nanostructures with maxima at the green-blue light. The surface became functional in terms of enhancing the weak photoluminescence of glass between 2–400 times. This system provides an easy way of enhancing the photoluminescence emission of initially low performance materials.

  7. Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

    Science.gov (United States)

    Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

    2015-02-07

    Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

  8. Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra

    Energy Technology Data Exchange (ETDEWEB)

    Surrente, A; Gallo, P; Felici, M; Dwir, B; Rudra, A; Kapon, E, E-mail: alessandro.surrente@epfl.c [Laboratory of Physics of Nanostructures, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2009-10-14

    Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 10{sup 9} cm{sup -2}) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such as QD lasers, modulators and switches requiring high overlap of the optical modes with the QD active region.

  9. Study by photoluminescence of centers associated to oxygen and carbon in silicon

    International Nuclear Information System (INIS)

    Lazrak, A.

    1984-12-01

    Results on analysis of luminescence of impurities in silicon are examined. Then in chapter 5, p. 76 to 91, irradiation of silicon by electrons is studied, interaction of defects created and diffusion, influence of carbon, oxygen and doping materials, annealing at 450 0 C, photoluminescence spectra are investigated [fr

  10. Photoluminescence topography of fluorescent SiC and its corresponding source crystals

    DEFF Research Database (Denmark)

    Wilhelm, M.; Kaiser, M.; Jokubavicus, V.

    2013-01-01

    The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence...

  11. Dependence of the two-photon photoluminescence yield of gold nanostructures on the laser pulse duration

    DEFF Research Database (Denmark)

    Biagioni, P.; Celebrano, M.; Savoini, M.

    2009-01-01

    Two-photon photoluminescence (TPPL) from gold nanostructures is becoming one of the most relevant tools for plasmon-assisted biological imaging and photothermal therapy as well as for the investigation of plasmonic devices. Here we study the yield of TPPL as a function of the temporal width δ of ...

  12. Microstructural and photoluminescence properties of sol–gel derived Tb3+ doped ZnO nanocrystals

    CSIR Research Space (South Africa)

    Kabongo, GL

    2014-04-01

    Full Text Available Un-doped and Tb(Sup3+) doped ZnO nanocrystals with different concentrations of Tb(Sup3+) were synthesized by a sol–gel method and their photoluminescence (PL) properties were investigated. The successful incorporation of Tb(sup3+) ions...

  13. Structure and photoluminescence of the A-Gesub(x)Sesub(1-x) system

    International Nuclear Information System (INIS)

    Kosa Somogyi, I.; Koos, M.

    1982-08-01

    A review of correlations between structural and luminescence properties of Gesub(x)Sesub(1-x) (0< x<0.43) glasses is given. Photoluminescence emission and excitation spectra, fatigue and decay kinetics of luminescence in these compounds are discussed. Existing data and models are compared and discrepancies between predictions of the models and experimental observations are pointed out. (author)

  14. Photoluminescence and dynamics of excitation relaxation in graphene oxide-porphyrin nanorods composite

    International Nuclear Information System (INIS)

    Khenfouch, M.; Wéry, J.; Baïtoul, M.; Maaza, M.

    2014-01-01

    Generally, porphyrin nanostructured materials are known by playing many roles such as photoconductors, photovoltaics and capable of light induced charging. Also their combination with acceptors like graphene, the rising two dimension material, added exciting physical and chemical properties. In this work, Morphology, optical absorption and photoluminescence properties were investigated in order to elucidate the interaction between the few layered graphene oxide (FGO) and pophyrin nanorods. Reporting on the photoluminescence (PL) of both porphyrin nanorods and FGO/porphyrin nanorods composite, synthesized via a self-assembly method, we have experimentally demonstrated the generation of a new photoluminescence band giving rise to a white light. This luminescence was studied by the analysis of its origins and dynamics which show a huge change of exciton life time found to be longer after the interaction with graphene oxide (GO) sheets. -- Highlights: • We prepared FGO-porphyrin nanorods composite via a simple chemical method. • Luminescence properties were studied presenting the absorption, photoluminescence and dynamics measurements. • These results show the emission of a white light which we studied its emissions origins. • TEM images show FGO sheets decorated with porphyrin nanorods. • FGO had like effect an increase of the exciton lifetime in porphyrin nanorods

  15. Photoluminescence of nanodiamonds influenced by charge transfer from silicon and metal substrates

    Czech Academy of Sciences Publication Activity Database

    Stehlík, Štěpán; Ondič, Lukáš; Berhane, A. M.; Aharonovich, I.; Girard, H.A.; Arnault, J.-C.; Rezek, Bohuslav

    2016-01-01

    Roč. 63, Mar (2016), s. 91-96 ISSN 0925-9635 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : nanodiamonds * photoluminescence * electrostatic charging * nanoparticles * interfaces Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.561, year: 2016

  16. Synthesis of blue photoluminescent WS2 quantum dots via ultrasonic cavitation

    International Nuclear Information System (INIS)

    Bayat, A.; Saievar-Iranizad, E.

    2017-01-01

    Blue photoluminescent WS 2 quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS 2 flakes to its quantum dots. The as synthesized WS 2 QDs showed blue photoluminescence upon UV excitation. The synthesized WS 2 QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS 2 QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS 2 quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS 2 was increased with formation of its quantum dots. •Solution of WS 2 QDs was stable after 6 months.

  17. New insights into the complex photoluminescence behaviour of titanium white pigments

    NARCIS (Netherlands)

    van Driel, B.A.; Artesani, A.; van den Berg, Klaas Jan; Dik, J.; Mosca, S.; Rossenaar, B.; Hoekstra, J.; Davies, A.; Nevin, A.; Valentini, G.; Comelli, D.

    2018-01-01

    This work reports the analysis of the time-resolved photoluminescence behaviour on the nanosecond and microsecond time scale of fourteen historical and contemporary titanium white pigments. The pigments were produced with different production methods and post-production treatments, giving rise to

  18. Enhanced photoluminescence from single nitrogen-vacancy defects in nanodiamonds coated with phenol-ionic complexes

    Science.gov (United States)

    Bray, Kerem; Previdi, Rodolfo; Gibson, Brant C.; Shimoni, Olga; Aharonovich, Igor

    2015-03-01

    Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and bio-labeling. In this work we demonstrate a robust approach to achieve an encapsulation of individual nanodiamonds with phenol-ionic complexes that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation reduces the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications.Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and bio-labeling. In this work we demonstrate a robust approach to achieve an encapsulation of individual nanodiamonds with phenol-ionic complexes that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation reduces the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07510b

  19. Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures

    KAUST Repository

    Wang, Zhuo

    2016-05-06

    Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ~20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

  20. Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Neudert, K.; Trojánek, F.; Kuldová, Karla; Oswald, Jiří; Hospodková, Alice; Malý, P.

    2009-01-01

    Roč. 6, č. 4 (2009), 853-856 ISSN 1862-6351 R&D Projects: GA ČR GA202/06/0718 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * photoluminescence * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism

  1. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings.

    Science.gov (United States)

    Abbarchi, Marco; Cavigli, Lucia; Somaschini, Claudio; Bietti, Sergio; Gurioli, Massimo; Vinattieri, Anna; Sanguinetti, Stefano

    2011-10-31

    A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.

  3. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2015-11-05

    Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

  4. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    Energy Technology Data Exchange (ETDEWEB)

    Pietraszkiewicz, Marek, E-mail: mpietraszkiewicz@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Dutkiewicz, Grzegorz; Borowiak, Teresa [Adam Mickiewicz University, Faculty of Chemistry, Department of Crystallography, Grunwaldzka 6, 60-780 Poznań (Poland); Kaczmarek, Anna M. [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium); Van Deun, Rik, E-mail: rik.vandeun@ugent.be [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium)

    2016-02-15

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu{sup 3+} to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip){sub 3}. The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  5. Synthesis of blue photoluminescent WS{sub 2} quantum dots via ultrasonic cavitation

    Energy Technology Data Exchange (ETDEWEB)

    Bayat, A.; Saievar-Iranizad, E., E-mail: saievare@modares.ac.ir

    2017-05-15

    Blue photoluminescent WS{sub 2} quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS{sub 2} flakes to its quantum dots. The as synthesized WS{sub 2} QDs showed blue photoluminescence upon UV excitation. The synthesized WS{sub 2} QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS{sub 2} QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS{sub 2} quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS{sub 2} was increased with formation of its quantum dots. •Solution of WS{sub 2} QDs was stable after 6 months.

  6. Recognition enhancement of oxidized and methyl-10-undecenoate functionalized porous silicon in gas phase photoluminescence sensing

    Czech Academy of Sciences Publication Activity Database

    Dian, J.; Vrkoslav, Vladimír; Jelínek, I.

    2010-01-01

    Roč. 147, - (2010), s. 406-410 ISSN 0925-4005 Institutional research plan: CEZ:AV0Z40550506 Keywords : porous silicon * photoluminescence * sensor * recognition enhancement Subject RIV: CC - Organic Chemistry Impact factor: 3.368, year: 2010

  7. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    International Nuclear Information System (INIS)

    Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

    2016-01-01

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  8. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    International Nuclear Information System (INIS)

    Pietraszkiewicz, Marek; Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina; Dutkiewicz, Grzegorz; Borowiak, Teresa; Kaczmarek, Anna M.; Van Deun, Rik

    2016-01-01

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu 3+ to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip) 3 . The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  9. Photoluminescence quenching through resonant energy transfer in blends of conjugated polymer with low-molecular acceptor

    International Nuclear Information System (INIS)

    Zapunidi, S. A.; Paraschuk, D. Yu.

    2008-01-01

    A model is proposed for photoluminescence quenching due to resonant energy transfer in a blend of a conjugated polymer and a low-molecular energy acceptor. An analytical dependence of the normalized photoluminescence intensity on the acceptor concentration is derived for the case of a homogeneous blend. This dependence can be described by two fitting parameters related to the Foerster radii for energy transfer between conjugated segments of the polymer and between the conjugated polymer segment and the energy acceptor. Asymptotic approximations are obtained for the model dependence that make it possible to estimate the contribution from the spatial migration of excitons to the photoluminescence quenching. The proposed model is used to analyze experimental data on the photoluminescence quenching in a blend of the soluble derivative of poly(p-phenylene vinylene) and trinitrofluorenone [13]. The Foerster radius for resonant energy transfer between the characteristic conjugated segment of poly(p-phenylene vinylene) and the energy acceptor is determined to be r F = 2.6 ± 0.3 nm

  10. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Czech Academy of Sciences Publication Activity Database

    Kostka, Petr; Zavadil, Jiří; Iovu, M.S.; Ivanova, Z. G.; Furniss, D.; Seddon, A.B.

    2015-01-01

    Roč. 648, NOV 5 (2015), s. 237-243 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 3.014, year: 2015

  11. Plasmon-assisted photoluminescence enhancement of SiC nanocrystals by proximal silver nanoparticles

    International Nuclear Information System (INIS)

    Zhang, N.; Dai, D.J.; Fan, J.Y.

    2012-01-01

    Highlights: ► We studied metal surface plasmon-enhanced photoluminescence in SiC nanocrystals. ► The integrated emission intensity can be enhanced by 17 times. ► The coupling between SiC emission and Ag plasmon oscillation induces the enhancement. ► The enhancement is tunable with varied spacing thickness of electrolytes. - Abstract: Plasmon-enhanced photoluminescence has wide application potential in many areas, whereas the underlying mechanism is still in debate. We report the photoluminescence enhancement in SiC nanocrystal–Ag nanoparticle coupled system spaced by the poly(styrene sulfonic acid) sodium salt/poly(allylamine hydrochloride) polyelectrolyte bilayers. The integrated luminescence intensity can be improved by up to 17 times. Our analysis indicates that the strong coupling between the SiC nanocrystals and the surface plasmon oscillation of the silver nanoparticles is the major cause of the luminescence enhancement. These findings will help to understand the photoluminescence enhancement mechanism as well as widen the applications of the SiC nanocrystals in photonics and life sciences.

  12. Influence of acetylcholinesterase immobilization on the photoluminescence properties of mesoporous silicon surface

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, Muhammad [Department of Chemistry, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of); Rafiq, Muhammad; Seo, Sung-Yum [Department of Biology, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of); Lee, Ki Hwan, E-mail: khlee@kongju.ac.kr [Department of Chemistry, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of)

    2014-07-01

    Acetylcholinesterase immobilized p-type porous silicon surface was prepared by covalent attachment. The immobilization procedure was based on support surface chemical oxidation, silanization, surface activation with cyanuric chloride and finally covalent attachment of free enzyme on the cyanuric chloride activated porous silicon surface. Different pore diameter of porous silicon samples were prepared by electrochemical etching in HF based electrolyte solution and appropriate sample was selected suitable for enzyme immobilization with maximum trapping ability. The surface modification was studied through field emission scanning electron microscope, EDS, FT-IR analysis, and photoluminescence measurement by utilizing the fluctuation in the photoluminescence of virgin and enzyme immobilized porous silicon surface. Porous silicon showed strong photoluminescence with maximum emission at 643 nm and immobilization of acetylcholinesterase on porous silicon surface cause considerable increment on the photoluminescence of porous silicon material while acetylcholinesterase free counterpart did not exhibit any fluorescence in the range of 635–670 nm. The activities of the free and immobilized enzymes were evaluated by spectrophotometric method by using neostigmine methylsulfate as standard enzyme inhibitor. The immobilized enzyme exhibited considerable response toward neostigmine methylsulfate in a dose dependent manner comparable with that of its free counterpart alongside enhanced stability, easy separation from the reaction media and significant saving of enzyme. It was believed that immobilized enzyme can be exploited in organic and biomolecule synthesis possessing technical and economical prestige over free enzyme and prominence of easy separation from the reaction mixture.

  13. Quantum dots with indirect band gap: power-law photoluminescence decay

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2014-01-01

    Roč. 11, č. 5 (2014), s. 507-512 ISSN 1708-5284 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : photoluminescence * quantum dots * electron-phonon interaction * inter-valley deformation potential interaction * power-law decay Subject RIV: BM - Solid Matter Physics ; Magnetism

  14. Graphitic carbon nitride/graphene oxide/reduced graphene oxide nanocomposites for photoluminescence and photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrzak, Malgorzata, E-mail: malgorzata.aleksandrzak@o2.pl; Kukulka, Wojciech; Mijowska, Ewa

    2017-03-15

    Highlights: • Graphitic carbon nitride modified with graphene nanostructures. • Influence of graphene nanostructures size in photocatalytic properties of g-C{sub 3}N{sub 4}. • Improved photocatalysis resulted from up-converted photoluminescence. - Abstract: The study presents a modification of graphitic carbon nitride (g-C{sub 3}N{sub 4}) with graphene oxide (GO) and reduced graphene oxide (rGO) and investigation of photoluminescent and photocatalytic properties. The influence of GO and rGO lateral sizes used for the modification was investigated. The nanomaterials were characterized with atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), diffuse reflectance UV–vis spectroscopy (DR-UV-vis) and photoluminescence spectroscopy (PL). PL revealed that pristine graphitic carbon nitride and its nanocomposites with GO and rGO emitted up-converted photoluminescence (UCPL) which could contribute to the improvement of photocatalytic activity of the materials. The photoactivity was evaluated in a process of phenol decomposition under visible light. A hybrid composed of rGO nanoparticles (rGONPs, 4–135 nm) exhibited the highest photoactivity compared to rGO with size of 150 nm–7.2 μm and graphene oxide with the corresponding sizes. The possible reason of the superior photocatalytic activity is the most enhanced UCPL of rGONPs, contributing to the emission of light with higher energy than the incident light, resulting in improved photogeneration of electron-hole pairs.

  15. Bioanalytical system for detection of cancer cells with photoluminescent ZnO nanorods

    Science.gov (United States)

    Viter, R.; Jekabsons, K.; Kalnina, Z.; Poletaev, N.; Hsu, S. H.; Riekstina, U.

    2016-11-01

    Using photoluminescent ZnO nanorods and carbohydrate marker SSEA-4, a novel cancer cell recognition system was developed. Immobilization of SSEA-4 antibodies (αSSEA-4) on ZnO nanorods was performed in buffer solution (pH = 7.1) over 2 h. The cancer cell line probes were fixed on the glass slide. One hundred microliters of ZnO-αSSEA-4 conjugates were deposited on the cell probe and exposed for 30 min. After washing photoluminescence spectra were recorded. Based on the developed methodology, ZnO-αSSEA-4 probes were tested on patient-derived breast and colorectal carcinoma cells. Our data clearly show that the carbohydrate SSEA-4 molecule is expressed on cancer cell lines and patient-derived cancer cells. Moreover, SSEA-4 targeted ZnO nanorods bind to the patient-derived cancer cells with high selectivity and the photoluminescence signal increased tremendously compared to the signal from the control samples. Furthermore, the photoluminescence intensity increase correlated with the extent of malignancy in the target cell population. A novel portable bioanalytical system, based on optical ZnO nanorods and fiber optic detection system was developed. We propose that carbohydrate SSEA-4 specific ZnO nanorods could be used for the development of cancer diagnostic biosensors and for targeted therapy.

  16. Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

    NARCIS (Netherlands)

    de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

    2014-01-01

    We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

  17. Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures

    KAUST Repository

    Wang, Zhuo; Dong, Zhaogang; Gu, Yinghong; Chang, Yung-Huang; Zhang, Lei; Li, Lain-Jong; Zhao, Weijie; Eda, Goki; Zhang, Wenjing; Grinblat, Gustavo; Maier, Stefan A.; Yang, Joel K. W.; Qiu, Cheng-Wei; Wee, Andrew T. S.

    2016-01-01

    Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ~20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

  18. Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate

    Czech Academy of Sciences Publication Activity Database

    Luo, X.; Wang, J.; Mao, H.; Remeš, Zdeněk; Král, Karel

    2013-01-01

    Roč. 112, č. 4 (2013), s. 821-825 ISSN 0947-8396 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : ZnO * photoluminescence * microcavity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

  19. High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

    Science.gov (United States)

    Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

    2015-03-24

    A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

  20. Ultrafast photoluminescence spectroscopy of H- and O-terminated nanocrystalline diamond films

    Czech Academy of Sciences Publication Activity Database

    Dzurňák, B.; Trojánek, F.; Preclíková, J.; Kromka, Alexander; Rezek, Bohuslav; Malý, P.

    2011-01-01

    Roč. 20, č. 8 (2011), 1155-1159 ISSN 0925-9635 R&D Projects: GA AV ČR KAN400100701; GA ČR GD202/09/H041 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond * femtosecond photoluminescence spectroscopy * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.913, year: 2011

  1. Silicon nanocrystals and nanodiamonds in live cells: photoluminescence characteristics, cytotoxicity and interaction with cell cytoskeleton

    Czech Academy of Sciences Publication Activity Database

    Fučíková, A.; Valenta, J.; Pelant, Ivan; Hubálek Kalbáčová, M.; Brož, A.; Rezek, Bohuslav; Kromka, Alexander; Bakaeva, Zulfiya

    2014-01-01

    Roč. 4, č. 20 (2014), s. 10334-10342 ISSN 2046-2069 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GA202/09/2078 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : silicon nanocrystals * nanodiamonds * live cells * photoluminescence Subject RIV: BO - Biophysics Impact factor: 3.840, year: 2014

  2. Influence of acetylcholinesterase immobilization on the photoluminescence properties of mesoporous silicon surface

    International Nuclear Information System (INIS)

    Saleem, Muhammad; Rafiq, Muhammad; Seo, Sung-Yum; Lee, Ki Hwan

    2014-01-01

    Acetylcholinesterase immobilized p-type porous silicon surface was prepared by covalent attachment. The immobilization procedure was based on support surface chemical oxidation, silanization, surface activation with cyanuric chloride and finally covalent attachment of free enzyme on the cyanuric chloride activated porous silicon surface. Different pore diameter of porous silicon samples were prepared by electrochemical etching in HF based electrolyte solution and appropriate sample was selected suitable for enzyme immobilization with maximum trapping ability. The surface modification was studied through field emission scanning electron microscope, EDS, FT-IR analysis, and photoluminescence measurement by utilizing the fluctuation in the photoluminescence of virgin and enzyme immobilized porous silicon surface. Porous silicon showed strong photoluminescence with maximum emission at 643 nm and immobilization of acetylcholinesterase on porous silicon surface cause considerable increment on the photoluminescence of porous silicon material while acetylcholinesterase free counterpart did not exhibit any fluorescence in the range of 635–670 nm. The activities of the free and immobilized enzymes were evaluated by spectrophotometric method by using neostigmine methylsulfate as standard enzyme inhibitor. The immobilized enzyme exhibited considerable response toward neostigmine methylsulfate in a dose dependent manner comparable with that of its free counterpart alongside enhanced stability, easy separation from the reaction media and significant saving of enzyme. It was believed that immobilized enzyme can be exploited in organic and biomolecule synthesis possessing technical and economical prestige over free enzyme and prominence of easy separation from the reaction mixture.

  3. Enzyme biosensor systems based on porous silicon photoluminescence for detection of glucose, urea and heavy metals.

    Science.gov (United States)

    Syshchyk, Olga; Skryshevsky, Valeriy A; Soldatkin, Oleksandr O; Soldatkin, Alexey P

    2015-04-15

    A phenomenon of changes in photoluminescence of porous silicon at variations in medium pH is proposed to be used as a basis for the biosensor system development. The method of conversion of a biochemical signal into an optical one is applied for direct determination of glucose and urea as well as for inhibitory analysis of heavy metal ions. Changes in the quantum yield of porous silicon photoluminescence occur at varying pH of the tested solution due to the enzyme-substrate reaction. When creating the biosensor systems, the enzymes urease and glucose oxidase (GOD) were used as a bioselective material; their optimal concentrations were experimentally determined. It was shown that the photoluminescence intensity of porous silicon increased by 1.7 times when increasing glucose concentration in the GOD-containing reaction medium from 0 to 3.0mM, and decreased by 1.45 times at the same increase in the urea concentration in the urease-containing reaction medium. The calibration curves of dependence of the biosensor system responses on the substrate concentrations are presented. It is shown that the presence of heavy metal ions (Cu(2+), Pb(2+), and Cd(2+)) in the tested solution causes an inhibition of the enzymatic reactions catalyzed by glucose oxidase and urease, which results in a restoration of the photoluminescence quantum yield of porous silicon. It is proposed to use this effect for the inhibitory analysis of heavy metal ions. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

    International Nuclear Information System (INIS)

    Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

    2014-01-01

    A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

  5. Single flexible nanofiber to achieve simultaneous photoluminescence-electrical conductivity bifunctionality.

    Science.gov (United States)

    Sheng, Shujuan; Ma, Qianli; Dong, Xiangting; Lv, Nan; Wang, Jinxian; Yu, Wensheng; Liu, Guixia

    2015-02-01

    In order to develop new-type multifunctional composite nanofibers, Eu(BA)3 phen/PANI/PVP bifunctional composite nanofibers with simultaneous photoluminescence and electrical conductivity have been successfully fabricated via electrospinning technology. Polyvinyl pyrrolidone (PVP) is used as a matrix to construct composite nanofibers containing different amounts of Eu(BA)3 phen and polyaniline (PANI). X-Ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), vibrating sample magnetometry (VSM), fluorescence spectroscopy and a Hall effect measurement system are used to characterize the morphology and properties of the composite nanofibers. The results indicate that the bifunctional composite nanofibers simultaneously possess excellent photoluminescence and electrical conductivity. Fluorescence emission peaks of Eu(3+) ions are observed in the Eu(BA)3 phen/PANI/PVP photoluminescence-electrical conductivity bifunctional composite nanofibers. The electrical conductivity reaches up to the order of 10(-3)  S/cm. The luminescent intensity and electrical conductivity of the composite nanofibers can be tuned by adjusting the amounts of Eu(BA)3 phen and PANI. The obtained photoluminescence-electrical conductivity bifunctional composite nanofibers are expected to possess many potential applications in areas such as microwave absorption, molecular electronics, biomedicine and future nanomechanics. More importantly, the design concept and construction technique are of universal significance to fabricate other bifunctional one-dimensional naonomaterials. Copyright © 2014 John Wiley & Sons, Ltd.

  6. Photoluminescence and dynamics of excitation relaxation in graphene oxide-porphyrin nanorods composite

    Energy Technology Data Exchange (ETDEWEB)

    Khenfouch, M., E-mail: khenfouch@yahoo.fr [University Sidi Mohamed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, BP 1796 Atlas, Fez 30 000 (Morocco); iThemba LABS-National Research Foundation of South Africa, Old Faure Road, PO Box 722, Somerset West 7129, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa); Wéry, J. [Institut des Matériaux Jean Rouxel, Nantes, 2 rue de la Houssinière, BP 32229, 44322 Nantes, Cedex 3 (France); Baïtoul, M., E-mail: baitoul@yahoo.fr [University Sidi Mohamed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, BP 1796 Atlas, Fez 30 000 (Morocco); Maaza, M. [iThemba LABS-National Research Foundation of South Africa, Old Faure Road, PO Box 722, Somerset West 7129, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa)

    2014-01-15

    Generally, porphyrin nanostructured materials are known by playing many roles such as photoconductors, photovoltaics and capable of light induced charging. Also their combination with acceptors like graphene, the rising two dimension material, added exciting physical and chemical properties. In this work, Morphology, optical absorption and photoluminescence properties were investigated in order to elucidate the interaction between the few layered graphene oxide (FGO) and pophyrin nanorods. Reporting on the photoluminescence (PL) of both porphyrin nanorods and FGO/porphyrin nanorods composite, synthesized via a self-assembly method, we have experimentally demonstrated the generation of a new photoluminescence band giving rise to a white light. This luminescence was studied by the analysis of its origins and dynamics which show a huge change of exciton life time found to be longer after the interaction with graphene oxide (GO) sheets. -- Highlights: • We prepared FGO-porphyrin nanorods composite via a simple chemical method. • Luminescence properties were studied presenting the absorption, photoluminescence and dynamics measurements. • These results show the emission of a white light which we studied its emissions origins. • TEM images show FGO sheets decorated with porphyrin nanorods. • FGO had like effect an increase of the exciton lifetime in porphyrin nanorods.

  7. Photoluminescent Gold Nanoclusters in Cancer Cells: Cellular Uptake, Toxicity, and Generation of Reactive Oxygen Species.

    Science.gov (United States)

    Matulionyte, Marija; Dapkute, Dominyka; Budenaite, Laima; Jarockyte, Greta; Rotomskis, Ricardas

    2017-02-10

    In recent years, photoluminescent gold nanoclusters have attracted considerable interest in both fundamental biomedical research and practical applications. Due to their ultrasmall size, unique molecule-like optical properties, and facile synthesis gold nanoclusters have been considered very promising photoluminescent agents for biosensing, bioimaging, and targeted therapy. Yet, interaction of such ultra-small nanoclusters with cells and other biological objects remains poorly understood. Therefore, the assessment of the biocompatibility and potential toxicity of gold nanoclusters is of major importance before their clinical application. In this study, the cellular uptake, cytotoxicity, and intracellular generation of reactive oxygen species (ROS) of bovine serum albumin-encapsulated (BSA-Au NCs) and 2-(N-morpholino) ethanesulfonic acid (MES)capped photoluminescent gold nanoclusters (Au-MES NCs) were investigated. The results showed that BSA-Au NCs accumulate in cells in a similar manner as BSA alone, indicating an endocytotic uptake mechanism while ultrasmall Au-MES NCs were distributed homogeneously throughout the whole cell volume including cell nucleus. The cytotoxicity of BSA-Au NCs was negligible, demonstrating good biocompatibility of such BSA-protected Au NCs. In contrast, possibly due to ultrasmall size and thin coating layer, Au-MES NCs exhibited exposure time-dependent high cytotoxicity and higher reactivity which led to highly increased generation of reactive oxygen species. The results demonstrate the importance of the coating layer to biocompatibility and toxicity of ultrasmall photoluminescent gold nanoclusters.

  8. Photoluminescent Gold Nanoclusters in Cancer Cells: Cellular Uptake, Toxicity, and Generation of Reactive Oxygen Species

    Directory of Open Access Journals (Sweden)

    Marija Matulionyte

    2017-02-01

    Full Text Available In recent years, photoluminescent gold nanoclusters have attracted considerable interest in both fundamental biomedical research and practical applications. Due to their ultrasmall size, unique molecule-like optical properties, and facile synthesis gold nanoclusters have been considered very promising photoluminescent agents for biosensing, bioimaging, and targeted therapy. Yet, interaction of such ultra-small nanoclusters with cells and other biological objects remains poorly understood. Therefore, the assessment of the biocompatibility and potential toxicity of gold nanoclusters is of major importance before their clinical application. In this study, the cellular uptake, cytotoxicity, and intracellular generation of reactive oxygen species (ROS of bovine serum albumin-encapsulated (BSA-Au NCs and 2-(N-morpholino ethanesulfonic acid (MEScapped photoluminescent gold nanoclusters (Au-MES NCs were investigated. The results showed that BSA-Au NCs accumulate in cells in a similar manner as BSA alone, indicating an endocytotic uptake mechanism while ultrasmall Au-MES NCs were distributed homogeneously throughout the whole cell volume including cell nucleus. The cytotoxicity of BSA-Au NCs was negligible, demonstrating good biocompatibility of such BSA-protected Au NCs. In contrast, possibly due to ultrasmall size and thin coating layer, Au-MES NCs exhibited exposure time-dependent high cytotoxicity and higher reactivity which led to highly increased generation of reactive oxygen species. The results demonstrate the importance of the coating layer to biocompatibility and toxicity of ultrasmall photoluminescent gold nanoclusters.

  9. Photoluminescence emission spectra of Makrofol® DE 1-1 upon irradiation with ultraviolet radiation

    Directory of Open Access Journals (Sweden)

    M. El Ghazaly

    Full Text Available Photoluminescence (PL emission spectra of Makrofol® DE 1-1 (bisphenol-A based polycarbonate upon irradiation with ultraviolet radiation of different wavelengths were investigated. The absorption-and attenuation coefficient measurements revealed that the Makrofol® DE 1-1 is characterized by high absorbance in the energy range 6.53–4.43 eV but for a lower energy than 4.43 eV, it is approximately transparent. Makrofol® DE 1-1 samples were irradiated with ultraviolet radiation of wavelength in the range from 250 (4.28 eV to 400 (3.10 eV nm in step of 10 nm and the corresponding photoluminescence (PL emission spectra were measured with a spectrofluorometer. It is found that the integrated counts and the peak height of the photoluminescence emission (PL bands are strongly correlated with the ultraviolet radiation wavelength. They are increased at the ultraviolet radiation wavelength 280 nm and have maximum at 290 nm, thereafter they decrease and diminish at 360 nm of ultraviolet wavelength. The position of the PL emission band peak was red shifted starting from 300 nm, which increased with the increase the ultraviolet radiation wavelength. The PL bandwidth increases linearly with the increase of the ultraviolet radiation wavelength. When Makrofol® DE 1-1 is irradiated with ultraviolet radiation of short wavelength (UVC, the photoluminescence emission spectra peaks also occur in the UVC but of a relatively longer wavelength. The current new findings should be considered carefully when using Makrofol® DE 1-1 in medical applications related to ultraviolet radiation. Keywords: Photoluminescence spectra, Makrofol® DE 1-1, UV–vis spectrophotometry, Attenuation coefficient, Ultraviolet radiation

  10. Synthesis and photoluminescence of Cr-, Ni-, Co-, and Ti-doped ZnSe nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Huy, Bui The [Anastro Laboratory, Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Nhatrang Institute of Technology and Research Application, 2 Hungvuong, Nhatrang (Viet Nam); Seo, Min-Ho; Kumar, Avvaru Praveen [Anastro Laboratory, Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Jeong, Hyuk [Department of Chemistry, Sookmyung Women’s University, Seoul 140-742 (Korea, Republic of); Lee, Yong-Ill, E-mail: yilee@changwon.ac.kr [Anastro Laboratory, Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of)

    2014-03-05

    Highlights: • The chain length, structure of surfactants operated the size nanoparticles. • Ni{sup 2+}, Co{sup 2+}, Cr{sup 3+}, and Ti{sup 3+} did not create any new centers in the structure of ZnSe. • Doping may have influenced the nanoparticles size because of the Zn replacement. • The TM ions change in ligand field caused the influence on fluorescence intensity. -- Abstract: We developed a facile strategy to synthesize transition metal (TM; Ni, Cr, Co, and Ti)-doped ZnSe nanoparticles (NPs) in aqueous media using a chemical co-precipitation method. Co-precipitation was performed in the presence of one of four different surfactants, namely mercaptoacetic acid (MAA), 3-mercaptopropionic acid (MPA), thioglycerol (TGC), or (3-mercaptopropyl) trimethoxysilane (MPTMS). Surface morphology, chemical, and crystalline properties of the TM-doped ZnSe NPs were studied by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Optical features were characterized by UV–visible and photoluminescence spectroscopies. The influence of various experimental parameters, including the amount of TM and the ratio of precursors, as well as different types of surfactants on the photoluminescence properties of TM-doped ZnSe NPs was investigated systematically. TM-doped ZnSe NPs were excited in the UV region and exhibited photoluminescence in the visible region. Intensity was affected by the concentration of the TM. The results showed that MPA had a stronger influence on photoluminescence than MAA, TGC, and MPTMS. The photoluminescence intensity of TM-doped ZnSe NPs was 30% higher than that of undoped ZnSe NPs.

  11. Photoluminescence decay lifetime measurements of hemicyanine derivatives of different alkyl chain lengths

    International Nuclear Information System (INIS)

    Shim, Taekyu; Lee, Myounghee; Kim, Sungho; Sung, Jaeho; Rhee, Bum Ku; Kim, Doseok; Kim, Hyunsung; Yoon, Kyung Byung

    2004-01-01

    The fluorescence upconversion setup for the detection of photoluminescence (PL) decay lifetime with subpicosecond time resolution was constructed, and the photoluminescence phenomena of several hemicyanine dyes with alkyl chains of different chain lengths tethered to the N atom of the pyridine moiety (HC-n, n=6, 15, 22) in methanol were investigated. The average decay lifetimes of the solutions determined from the measured data by multi-order exponential decay curve fitting were ∼27 ps at the PL peak wavelength. It was found that the PL decay properties did not depend on the alkyl chain length in the molecule, implying that the twist of the alkylpyridinium ring of the molecule is not possible as a nonfluorescing relaxation pathway. The time-dependent PL spectra constructed from the PL lifetime data showed the dynamic Stokes shift of ∼1000 cm -1

  12. Photoluminescence properties of ZnO thin films grown by using the hydrothermal technique

    International Nuclear Information System (INIS)

    Sahoo, Trilochan; Jang, Leewoon; Jeon, Juwon; Kim, Myoung; Kim, Jinsoo; Lee, Inhwan; Kwak, Joonseop; Lee, Jaejin

    2010-01-01

    The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 .deg. C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 ± 0.5 meV from the temperature dependent quenching of the integral intensities.

  13. Mechanoluminescence and photoluminescence of Pr3+ activated KMgF3 phosphor

    International Nuclear Information System (INIS)

    Dhoble, S.J.; Kher, R.S.; Furetta, C.

    2003-01-01

    A Czochralski method for the preparation of crystalline KMgF 3 : Pr phosphors are reported. Photoluminescence (PL) and mechanoluminescence (ML) characteristics are studied. Photoluminescence of Pr 3+ activated KMgF 3 shows the strong emission of Pr 3+ ions were observed at 498 and 650 nm by excitation of 213 mn. ML of KMgF 3 : Pr 3+ shows two peaks, which have been observed in ML intensity versus time curve. The ML peak shows the recombination of electrons with free radical (anion radical produced by γ-irradiation) released from two type traps during the mechanical pressure applied on KMgF 3 : Pr 3+ phosphor. It has a supra linear ML response with γ-ray exposure and a negligible fading. These properties of phosphor should be suitable in dosimetry of ionization relation using ML technique. Therefore the KMgF 3 : Pr 3+ phosphor proposed for ML dosimetry of ionization radiations. (Author)

  14. The correlation of blue shift of photoluminescence and morphology of silicon nanoporous

    Energy Technology Data Exchange (ETDEWEB)

    Al-Jumaili, Batool E. B., E-mail: batooleneaze@gmail.com [Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia); Department of Physics, Anbar University (Iraq); Talib, Zainal A.; Josephine, L.Y.; Paiman, Suriati B.; Muh’d, Ibrahim B.; Mofdal, Manahil E. E. [Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia); Ahmed, Naser M.; Abdulateef, Sinan A. [School of Physics, USM, 11800 Penang (Malaysia); Al-Jumaily, Abdulmajeed H. J. [Department of Computer and Communication Systems Engineering, Universiti Putra Malaysia (UPM), Serdang, Selangor 43400 (Malaysia); Ramizy, Asmiet [Department of Physics, Anbar University (Iraq)

    2016-07-06

    Porous silicon with diameters ranging from 6.41 to 7.12 nm were synthesized via electrochemical etching by varied anodization current density in ethanoic solutions containing aqueous hydrofluoric acid up to 65 mA/cm{sup 2}.The luminescence properties of the nanoporous at room temperature were analyzed via photoluminescence spectroscopy. Photoluminescence PL spectra exhibit a broad emission band in the range of 360-700 nm photon energy. The PL spectrum has a blue shift in varied anodization current density; the blue shift incremented as the existing of anodization although the intensity decreased. The current blue shift is owning to alteration of silicon nanocrystal structure at the superficies. The superficial morphology of the PS layers consists of unified and orderly distribution of nanocrystalline Si structures, have high porosity around (93.75%) and high thickness 39.52 µm.

  15. Dewetting-Induced Photoluminescent Enhancement of Poly(lauryl methacrylate)/Quantum Dot Thin Films.

    Science.gov (United States)

    Geldmeier, Jeffrey; Rile, Lexy; Yoon, Young Jun; Jung, Jaehan; Lin, Zhiqun; Tsukruk, Vladimir V

    2017-12-19

    A new method for enhancing photoluminescence from quantum dot (QD)/polymer nanocomposite films is proposed. Poly(lauryl methacrylate) (PLMA) thin films containing embedded QDs are intentionally allowed to undergo dewetting on substrates by exposure to a nonsolvent vapor. After controlled dewetting, films exhibited typical dewetting morphologies with increased amounts of scattering that served to outcouple photoluminescence from the film and reduce internal light propagation within the film. Up to a 5-fold enhancement of the film emission was achieved depending on material factors such as the initial film thickness and QD concentration within the film. An increase in initial film thickness was shown to increase the dewetted maximum feature size and its characteristic length until a critical thickness was reached where dewetting became inhibited. A unique light exposure-based photopatterning method is also presented for the creation of high contrast emissive patterns as guided by spatially controlled dewetting.

  16. Photoluminescence studies on holmium (III) and praseodymium (III) doped calcium borophosphate (CBP) phosphors

    Science.gov (United States)

    Reddy Prasad, V.; Damodaraiah, S.; Devara, S. N.; Ratnakaram, Y. C.

    2018-05-01

    Using solid state reaction method, Ho3+ and Pr3+ doped calcium borophosphate (CBP) phosphors were prepared. These phosphors were characterized using XRD, SEM, FT-IR, 31P solid state NMR, photoluminescence (PL) and decay profiles. Structural details were discussed from XRD and FT-IR spectra. From 31P NMR spectra of these phosphors, mono-phosphate complexes Q0-(PO43-) were observed. Photoluminescence spectra were measured for both Ho3+ and Pr3+ doped calcium borophosphate phosphors and the spectra were studied for different concentrations. Decay curves were obtained for the excited level, 5F4+5S2 of Ho3+ and 1D2 level of Pr3+ in these calcium borophosphate phosphors and lifetimes were measured. CIE color chromaticity diagrams are drawn for these two rare earth ions in calcium borophosphate phosphors. Results show that Ho3+ and Pr3+ doped CBP phosphors might be served as green and red luminescence materials.

  17. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  18. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    International Nuclear Information System (INIS)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Casalboni, M.; Hatami, F.; Masselink, W.T.; Zhang, H.

    2016-01-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N 2 ) and in solvent vapours of methanol, chloroform, acetone and water were measured. The presence of vapors of chloroform, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed. (paper)

  19. Near-unity photoluminescence quantum yield in MoS.sub.2

    Science.gov (United States)

    Amani, Matin; Lien, Der-Hsien; Kiriya, Daisuke; Bullock, James; Javey, Ali

    2017-12-26

    Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

  20. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

    International Nuclear Information System (INIS)

    Saxena, Shailendra K.; Rai, Hari. M.; Late, Ravikiran; Sagdeo, Pankaj R.; Kumar, Rajesh

    2015-01-01

    In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence

  1. AgCl-doped CdSe quantum dots with near-IR photoluminescence.

    Science.gov (United States)

    Kotin, Pavel Aleksandrovich; Bubenov, Sergey Sergeevich; Mordvinova, Natalia Evgenievna; Dorofeev, Sergey Gennadievich

    2017-01-01

    We report the synthesis of colloidal CdSe quantum dots doped with a novel Ag precursor: AgCl. The addition of AgCl causes dramatic changes in the morphology of synthesized nanocrystals from spherical nanoparticles to tetrapods and finally to large ellipsoidal nanoparticles. Ellipsoidal nanoparticles possess an intensive near-IR photoluminescence ranging up to 0.9 eV (ca. 1400 nm). In this article, we explain the reasons for the formation of the ellipsoidal nanoparticles as well as the peculiarities of the process. The structure, Ag content, and optical properties of quantum dots are also investigated. The optimal conditions for maximizing both the reaction yield and IR photoluminescence quantum yield are found.

  2. Photoluminescence study of ZnS and ZnS:Pb nanoparticles

    International Nuclear Information System (INIS)

    Virpal,; Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

    2015-01-01

    Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states

  3. Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E.E. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Estevez, J.O. [Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos, CP 62580 (Mexico); Basurto-Pensado, M.A. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico)

    2014-11-15

    Metal electrode-free electrochemical etching of low doped n-type silicon substrates, under the combined effect of magnetic and lateral electric field, is used to fabricate photoluminescent n-type porous silicon structures in dark conditions. A lateral gradient in terms of structural characteristics (i.e. thickness and pore dimensions) along the electric field direction is formed. Enhancement of electric and magnetic field resulted in the increase of pore density and a change in the shape of the macropore structure, from circular to square morphology. Broad photoluminescence (PL) emission from 500 to 800 nm, with a PL peak wavelength ranging from 571 to 642 nm, is attributed to the wide range of microporous features present on the porous silicon layer.

  4. Photoluminescent properties of ZnS nanoparticles prepared by electro-explosion of Zn wires

    International Nuclear Information System (INIS)

    Goswami, Navendu; Sen, P.

    2007-01-01

    We study the photoluminescent properties of ZnS nanoparticles without the influence of dopants or magnetic impurities. The ZnS nanoparticles reported in this case were synthesized by a novel method of electro-explosion of wire (EEW). The nanoparticles were prepared employing electro-explosion of pure zinc wires in a cell filled with sulfide ions to produce a free-standing compound ZnS semiconductor. To investigate the structural and optical properties, these nanoparticles were characterized by X-ray powder diffraction (XRD), atomic force microscopy (AFM), UV-visible and photoluminescence (PL) spectroscopy. Consistent with the enhancement of the PL intensity of the 443 nm peak due to deep blue emission of ZnS particles, the XRD of the nanoparticles reveals a hexagonal phase of ZnS nanocrystallites prepared by our novel synthesis technique

  5. Assembling photoluminescent tri(8-quinolinolato)aluminum into periodic mesoporous organosilicas.

    Science.gov (United States)

    Yang, Ying; Zhang, Xin; Kan, Qiubin

    2013-12-01

    Mesostructured and mesoporous materials are emerging as a new class of optical materials. However, their synthesis is nontrivial. In this work, periodic mesostructured metal complex-containing silicas of MCM- and SBA-type bearing homogeneously distributed photoluminescent tri(8-quinolinolato)aluminum inside the channel walls (denoted as Alq3@PMO-MCM and Alq3@PMO-SBA, respectively) have been achieved via one-pot co-assembling of inorganic/surfactant/optically active species. A comprehensive multianalytical characterization of the structural and optical properties demonstrates that both Alq3@PMO-MCM and Alq3@PMO-SBA series gainfully combine the photoluminescent properties of Alq3 with the porous features of PMOs. Regularly arranged pores provide high surface area to disperse optically active components well and render Alq3-containing PMOs promising materials for optoelectronic applications. Copyright © 2013. Published by Elsevier Inc.

  6. Structural phase analysis and photoluminescence properties of Mg-doped TiO2 nanoparticles

    Science.gov (United States)

    Ali, T.; Ashraf, M. Anas; Ali, S. Asad; Ahmed, Ateeq; Tripathi, P.

    2018-05-01

    In this paper, we report the synthesis, characterization and photoluminescence properties of Mg-doped TiO2 nanoparticles (NPs). The samples were synthesized by sol-gel method and characterized using the standard analytical techniques such as X-ray diffraction (XRD), Transmission electron microscope (TEM), Energy dispersive X-ray spectroscopy (EDX), UV-visible and photoluminescence spectroscopy. The powder XRD spectra revealed that the synthesized samples are pure and crystalline in nature and showing tetragonal anatase phase of TiO2 NPs. UV-visible spectrum illustrates that an absorption edge shifts toward the visible region. This study may provide a new insight for making the nanomaterials which can be used in photocatalytic applications.

  7. Time-resolved photoluminescence measurements of InP/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Pham Thi Thuy; Ung Thi Dieu Thuy; Tran Thi Kim Chi; Le Quang Phuong; Nguyen Quang Liem [Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Li Liang; Reiss, Peter [CEA Grenoble, DSM/INAC/SPrAM (UMR 5819 CEA-CNRS-Universite Joseph Fourier)/LEMOH, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)], E-mail: liemnq@ims.vast.ac.vn

    2009-09-01

    This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.

  8. Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

    Science.gov (United States)

    Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

    2017-11-01

    Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

  9. Laser post-processing of halide perovskites for enhanced photoluminescence and absorbance

    Science.gov (United States)

    Tiguntseva, E. Y.; Saraeva, I. N.; Kudryashov, S. I.; Ushakova, E. V.; Komissarenko, F. E.; Ishteev, A. R.; Tsypkin, A. N.; Haroldson, R.; Milichko, V. A.; Zuev, D. A.; Makarov, S. V.; Zakhidov, A. A.

    2017-11-01

    Hybrid halide perovskites have emerged as one of the most promising type of materials for thin-film photovoltaic and light-emitting devices. Further boosting their performance is critically important for commercialization. Here we use femtosecond laser for post-processing of organo-metalic perovskite (MAPbI3) films. The high throughput laser approaches include both ablative silicon nanoparticles integration and laser-induced annealing. By using these techniques, we achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally 10-fold enhancement of absorbance in a perovskite layer with the silicon nanoparticles. Direct laser annealing allows for increasing of photoluminescence over 130%, and increase absorbance over 300% in near-IR range. We believe that the developed approaches pave the way to novel scalable and highly effective designs of perovskite based devices.

  10. Probing the exciton density of states in semiconductor nanocrystals using integrated photoluminescence spectroscopy

    CERN Document Server

    Filonovich, S A; Vasilevskiy, M I; Rolo, A G; Gomes, M J M; Artemiev, M V; Talapin, D V; Rogach, A L

    2002-01-01

    We present the results of a comparative analysis of the absorption and photoluminescence excitation (PLE) spectra vs. integrated photoluminescence (IPL) measured as a function of the excitation wavelength for a number of samples containing II-VI semiconductor nanocrystals (NCs) produced by different techniques. The structure of the absorption and PL spectra due to excitons confined in NCs and difficulties with the correct interpretation of the transmittance and PLE results are discussed. It is shown that, compared to the conventional PLE, the IPL intensity plotted against the excitation wavelength (IPLE spectra) reproduce better the structure of the absorption spectra. Therefore, IPLE spectroscopy can be successfully used for probing the quantized electron-hole (e-h) transitions in semiconductor nanocrystals. (author)

  11. 'School adopts an experiment': the photoluminescence in extra-virgin olive oil and in tonic water

    Science.gov (United States)

    Agliolo Gallitto, A.; Agnello, S.; Cannas, M.

    2011-09-01

    We report a laboratory activity, carried out along with high- and secondary-school students, that can be done to increase the interest of the young in scientific studies. Groups of selected students 'adopted' experiments at physics research laboratories, under the guidance of university researchers. Subsequently, the students demonstrated the experiments to the public at large during the annual science festival organized in Palermo by the association PalermoScienza, in collaboration with the University of Palermo. Experiments on the magnetic levitation of superconductors and on the photoluminescence of several substances were proposed. We discuss the experiment on photoluminescence as a case study. The students who adopted the experiments reinforced their commitment to learning. They acquired a physics-based knowledge of the topics connected with the experiments in a much better way compared with the usual didactics in school.

  12. Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

    Energy Technology Data Exchange (ETDEWEB)

    Galář, P., E-mail: pavel.galar@mff.cuni.cz; Malý, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, Prague 121 16 (Czech Republic); Čermák, J.; Kromka, A.; Rezek, B. [Institute of Physics ASCR v.v.i., Cukrovarnická 10, Prague 160 00 (Czech Republic)

    2014-12-14

    Hybrid diamond-organic interfaces are considered attractive for diverse applications ranging from electronics and energy conversion to medicine. Here we use time-resolved and time-integrated photoluminescence spectroscopy in visible spectral range (380–700 nm) to study electronic processes in H-terminated nanocrystalline diamond films (NCD) with 150 nm thin, electrochemically deposited polypyrrole (PPy) layer. We observe changes in dynamics of NCD photoluminescence as well as in its time-integrated spectra after polymer deposition. The effect is reversible. We propose a model where the PPy layer on the NCD surface promotes spatial separation of photo-generated charge carriers both in non-diamond carbon phase and in bulk diamond. By comparing different NCD thicknesses we show that the effect goes as much as 200 nm deep inside the NCD film.

  13. [The photoluminescence and absorption properties of Co/AAO nano-array composites].

    Science.gov (United States)

    Li, Shou-Yi; Wang, Cheng-Wei; Li, Yan; Wang, Jian; Ma, Bao-Hong

    2008-03-01

    Ordered Co/AAO nano-array structures were fabricated by alternating current (AC) electrodeposition method within the cylindrical pores of anodic aluminum oxide (AAO) template prepared in oxalic acid electrolyte. The photoluminescence (PL) emission and photoabsorption of AAO templates and Co/AAO nano-array structures were investigated respectively. The results show that a marked photoluminescence band of AAO membranes occurs in the wavelength range of 350-550 nm and their PL peak position is at 395 nm. And with the increase in the deposition amount of Co nanoparticles, the PL intensity of Co/AAO nano-array structures decreases gradually, and their peak positions of the PL are invariable (395 nm). Meanwhile the absorption edges of Co/AAO show a larger redshift, and the largest shift from the near ultraviolet to the infrared exceeds 380 nm. The above phenomena caused by Co nano-particles in Co/AAO composite were analyzed.

  14. Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

    International Nuclear Information System (INIS)

    Wang, R.X.; Xu, S.J.; Fung, S.; Beling, C.D.; Wang, K.; Li, S.; Wei, Z.F.; Zhou, T.J.; Zhang, J.D.; Huang Ying; Gong, M.

    2005-01-01

    GaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A 1 (LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be Ge Ga ) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN

  15. Photoluminescence enhancement in few-layer WS2 films via Au nanoparticles

    Directory of Open Access Journals (Sweden)

    Sin Yuk Choi

    2015-06-01

    Full Text Available Nano-composites of two-dimensional atomic layered WS2 and Au nanoparticles (AuNPs have been fabricated by sulfurization of sputtered W films followed by immersing into HAuCl4 aqueous solution. The morphology, structure and AuNPs distribution have been characterized by electron microscopy. The decorated AuNPs can be more densely formed on the edge and defective sites of triangle WS2. We have compared the optical absorption and photoluminescence of bare WS2 and Au-decorated WS2 layers. Enhancement in the photoluminescence is observed in the Au-WS2 nano-composites, attributed to localized surface plasmonic effect. This work provides the possibility to develop photonic application in two-dimensional materials.

  16. Magnetic enhancement of photoluminescence from blue-luminescent graphene quantum dots

    Science.gov (United States)

    Chen, Qi; Shi, Chentian; Zhang, Chunfeng; Pu, Songyang; Wang, Rui; Wu, Xuewei; Wang, Xiaoyong; Xue, Fei; Pan, Dengyu; Xiao, Min

    2016-02-01

    Graphene quantum-dots (GQDs) have been predicted and demonstrated with fascinating optical and magnetic properties. However, the magnetic effect on the optical properties remains experimentally unexplored. Here, we conduct a magneto-photoluminescence study on the blue-luminescence GQDs at cryogenic temperatures with magnetic field up to 10 T. When the magnetic field is applied, a remarkable enhancement of photoluminescence emission has been observed together with an insignificant change in circular polarization. The results have been well explained by the scenario of magnetic-field-controlled singlet-triplet mixing in GQDs owing to the Zeeman splitting of triplet states, which is further verified by temperature-dependent experiments. This work uncovers the pivotal role of intersystem crossing in GQDs, which is instrumental for their potential applications such as light-emitting diodes, photodynamic therapy, and spintronic devices.

  17. A study of photoluminescence and micro-Raman scattering in C-implanted GaN

    International Nuclear Information System (INIS)

    Zhang Limin; Zhang Xiaodong; Liu Zhengmin

    2010-01-01

    GaN samples (no yellow luminescence) in their as-grown states were implanted with 10 13 -10 17 C ions/cm 2 and studied by photoluminescence spectra and micro-Raman scattering spectra. The photoluminescence study showed that yellow luminescence were produced in the C-implanted GaN after 950 degree C annealing, and the peaks of the near band edge emissions showed blue-shifts after C implantation. The Raman measurements indicated that the stresses in GaN films did not change after C implantation. The samples implanted with 10 15 cm -2 carbon ions had the Raman peak at 300 cm -1 , which is associated to the disorder-activated Raman scattering. However, further increasing the implantation dose resulted decreased intensity of the 300 cm -1 peak, due to the ion beam current increase with the implantation dose. (authors)

  18. Photoluminescence and radiation response properties of Ce3+-doped CsCaCl3 crystalline scintillator

    International Nuclear Information System (INIS)

    Fujimoto, Yutaka; Saeki, Keiichiro; Tanaka, Hironori; Yahaba, Takuma; Koshimizu, Masanori; Asai, Keisuke; Yanagida, Takayuki

    2016-01-01

    In this paper, we report on the photoluminescence and scintillation properties of a newly developed CsCaCl 3 :Ce (0.5 mol%) crystalline scintillator grown by the vertical Bridgman method. The fluorescence quantum efficiency for the Ce 3+ characteristic emission bands centered at around 350–400 nm was 76% under excitation at 330 nm light. The photoluminescence decay time of the Ce 3+ was approximately 32 ns. When x-ray excited the crystal, intense emission bands were observed at 350–400 nm, and could be attributed to the Ce 3+ emission. The scintillation light yield of the developed crystal was ∼7600 ph MeV −1 compared to a NaI:Tl commercial scintillator, and the principal scintillation decay time was approximately 340 ns plus two fast components of around 1.6 ns and 45 ns. (paper)

  19. Investigation on photoluminescence quenching of CdSe/ZnS quantum dots by organic charge transporting materials

    Directory of Open Access Journals (Sweden)

    Yuqiu Qu

    2015-12-01

    Full Text Available The effect of different organic charge transporting materials on the photoluminescence of CdSe/ZnS core/shell quantum dots has been studied by means of steady-state and time-resolved photoluminescence spectroscopy. With an increase in concentration of the organic charge transporting material in the quantum dots solutions, the photoluminescence intensity of CdSe/ZnS quantum dots was quenched greatly and the fluorescence lifetime was shortened gradually. The quenching efficiency of CdSe/ZnS core/shell quantum dots decreased with increasing the oxidation potential of organic charge transporting materials. Based on the analysis, two pathways in the photoluminescence quenching process have been defined: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transporting from quantum dots to the charge transporting materials.

  20. Green Nanotechnology from Waste Carbon-Polyaniline Composite: Generation of Wavelength-Independent Multiband Photoluminescence for Sensitive Ion Detection

    KAUST Repository

    Goswami, Sumita; Nandy, Suman; Deuermeier, Jonas; Marques, Ana C.; Nunes, Daniela; Patole, Shashikant P.; Da Costa, Pedro M. F. J.; Martins, Rodrigo; Fortunato, Elvira

    2017-01-01

    This study reports on the qualitative analysis of photoluminescence effect generated from waste carbon of cooking oven by facile cost-effective material engineering. The waste carbon product as a form of carbon nanoparticles (CNPs) is incorporated

  1. Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina

    2012-01-01

    Roč. 9, 8/9 (2012), s. 717-731 ISSN 1475-7435 R&D Projects: GA AV ČR(CZ) IAA101120804; GA MŠk LC510; GA AV ČR KJB100100903 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * surface passivation * photoluminescence * lasing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  2. Electron and Hole Behavior in Powdered TiO2 - Photoluminescence and Infrared Studies

    Science.gov (United States)

    2014-04-01

    and Selected Results. Chem. Rev. 1995, 95, 735-758. 6. Goswami, D. Y., A Review of Engineering Developments of Aqueous Phase Solar Photocatalytic...B., Surface-Bound Carbonyl - Compounds as Lewis-Acids - Photoluminescence as a Probe for the Binding of Ketones and Aldehydes to Cadmium-Sulfide and...Photoassisted Reaction of Water/ Methanol Mixture. J. Phys. Chem. C 2007, 111, 693-699. 51. Nakajima, H.; Itoh, K.; Murabayashi, M., Influences of C-1-C-3

  3. Defect-Induced Photoluminescence Enhancement and Corresponding Transport Degradation in Individual Suspended Carbon Nanotubes

    Science.gov (United States)

    Wang, Bo; Shen, Lang; Yang, Sisi; Chen, Jihan; Echternach, Juliana; Dhall, Rohan; Kang, DaeJin; Cronin, Stephen

    2018-05-01

    This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. The utilization of defects in carbon nanotubes to improve their photoluminescence efficiency has become a widespread study of the realization of efficient light-emitting devices. Here, we report a detailed comparison of the defects in nanotubes (quantified by Raman spectroscopy) and photoluminescence (PL) intensity of individual suspended carbon nanotubes (CNTs). We also evaluate the impact of these defects on the electron or hole transport in the nanotubes, which is crucial for the ultimate realization of optoelectronic devices. We find that brightly luminescent nanotubes exhibit a pronounced D-band in their Raman spectra, and vice versa, dimly luminescent nanotubes exhibit almost no D-band. Here, defects are advantageous for light emission by trapping excitons, which extend their lifetimes. We quantify this behavior by plotting the PL intensity as a function of the ID /IG -band Raman intensity ratio, which exhibits a Lorentzian distribution peaked at ID /IG=0.17 . For CNTs with a ID /IG ratio >0.25 , the PL intensity decreases, indicating that above some critical density, nonradiative recombination at defect sites dominates over the advantages of exciton trapping. In an attempt to fabricate optoelectronic devices based on these brightly luminescent CNTs, we transfer these suspended CNTs to platinum electrodes and find that the brightly photoluminescent nanotubes exhibit nearly infinite resistance due to these defects, while those without bright photoluminescence exhibit finite resistance. These findings indicate a potential limitation in the use of brightly luminescent CNTs for optoelectronic applications.

  4. Enhanced photoluminescence from single nitrogen-vacancy defects in nanodiamonds coated with metal-phenolic networks

    OpenAIRE

    Bray, Kerem; Previdi, Rodolfo; Gibson, Brant C.; Shimoni, Olga; Aharonovich, Igor

    2015-01-01

    Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and biolabeling. In this work we demonstrate a robust approach to surface functionalize individual nanodiamonds with metal-phenolic networks that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation suppr...

  5. Photoluminescence emission spectra of Makrofol® DE 1-1 upon irradiation with ultraviolet radiation

    Science.gov (United States)

    El Ghazaly, M.; Aydarous, Abdulkadir

    Photoluminescence (PL) emission spectra of Makrofol® DE 1-1 (bisphenol-A based polycarbonate) upon irradiation with ultraviolet radiation of different wavelengths were investigated. The absorption-and attenuation coefficient measurements revealed that the Makrofol® DE 1-1 is characterized by high absorbance in the energy range 6.53-4.43 eV but for a lower energy than 4.43 eV, it is approximately transparent. Makrofol® DE 1-1 samples were irradiated with ultraviolet radiation of wavelength in the range from 250 (4.28 eV) to 400 (3.10 eV) nm in step of 10 nm and the corresponding photoluminescence (PL) emission spectra were measured with a spectrofluorometer. It is found that the integrated counts and the peak height of the photoluminescence emission (PL) bands are strongly correlated with the ultraviolet radiation wavelength. They are increased at the ultraviolet radiation wavelength 280 nm and have maximum at 290 nm, thereafter they decrease and diminish at 360 nm of ultraviolet wavelength. The position of the PL emission band peak was red shifted starting from 300 nm, which increased with the increase the ultraviolet radiation wavelength. The PL bandwidth increases linearly with the increase of the ultraviolet radiation wavelength. When Makrofol® DE 1-1 is irradiated with ultraviolet radiation of short wavelength (UVC), the photoluminescence emission spectra peaks also occur in the UVC but of a relatively longer wavelength. The current new findings should be considered carefully when using Makrofol® DE 1-1 in medical applications related to ultraviolet radiation.

  6. Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

    International Nuclear Information System (INIS)

    Oda, Katsuya; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

    2014-01-01

    Lattice strain applied by patterned Si 3 N 4 stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si 3 N 4 stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si 3 N 4 layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si 3 N 4 stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si 3 N 4 stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si 3 N 4 stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si 3 N 4 stressors. • Photoluminescence (PL) intensity was increased with the Si 3 N 4 stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers

  7. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    International Nuclear Information System (INIS)

    Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  8. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    Science.gov (United States)

    Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.

    2010-02-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  9. Photoluminescence and absorption spectra of various common TL phosphors - interpretation of TL mechanisms

    International Nuclear Information System (INIS)

    Nagpal, J.S.

    1980-01-01

    Photoluminescence and absorption spectra of TL phosphors TLD-100, CaF 2 :Dy, CaSO 4 :Dy(0.05%wt), CaSO 4 :Tm(0.05%wt) and Mg 2 SiO 4 :Tb have been measured. The absorption spectra are typical of RE 2+ in rare earth doped irradiated phosphors. On heating RE 2+ yields RE 3+ and emission from the excited states of RE 3+ is observed. (author)

  10. Photoluminescence Detected Doublet Structure in the Integer and Fractional Quantum Hall Regime

    International Nuclear Information System (INIS)

    Kim, Yongmin; Munteanu, F.M.; Perry, C.H.; Reno, J.L.; Rickel, D.G.; Simmons, J.A.

    1999-01-01

    We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>v>l/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit

  11. Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

    Czech Academy of Sciences Publication Activity Database

    Galář, P.; Čermák, Jan; Malý, P.; Kromka, Alexander; Rezek, Bohuslav

    2014-01-01

    Roč. 116, č. 22 (2014), "223103-1"-"223103-6" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : polypyrrole * nanocrystalline diamond * photoluminescence spectroscopy * opto-electronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  12. Green and fast synthesis of amino-functionalized graphene quantum dots with deep blue photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Blanco, E., E-mail: eduardo.blanco@uca.es; Blanco, G.; Gonzalez-Leal, J. M.; Barrera, M. C.; Domínguez, M.; Ramirez-del-Solar, M. [University of Cádiz, Institute of Electron Microscopy and Materials (Spain)

    2015-05-15

    Graphene quantum dots (GQDs) were prepared using a top-down approach with a green microwave-assisted hydrothermal synthesis from ultrathin graphite, previously ultrasound delaminated. Results obtained by transmission electron microscopy and atomic force microscopy indicate that the so-fabricated GQDs are plates with 6 nm of average diameter, mostly single- or bi-layered. Photoluminescence characterization shows that the strongest emission occurs at 410–415 nm wavelength when the samples are excited at 310–320 nm wavelength. In addition to these down-conversion features, GQDs also exhibit up-conversion photoluminescence when excited in the range 560–800 nm wavelength, with broad emission peaks at 410–450 nm wavelength. Analysis of X-ray photoelectron spectroscopy measurements indicates a higher proportion of C–C sp{sup 2} than sp{sup 3} bonds, with the sp{sup 3} ones mainly located at the GQD surfaces. Also evidences of C–O and C–N bonds at the GQD surface have been observed. The combination of these results with Raman and ultraviolet–visible absorption experiments allows envisaging the GQDs to be composed of amino-functionalized sp{sup 2} islands with a high degree of surface oxidation. This would explain the photoluminescent properties observed in the samples under study. The combined up- and down-conversion photoluminescence processes would made these GQDs a powerful energy-transfer component in GQDs–TiO{sub 2} nanocomposite systems, which could be used in photocatalyst devices with superior performance compared to simple TiO{sub 2} systems.

  13. Photoluminescence study of Er-doped zinc-sodium-antimonite glasses

    Czech Academy of Sciences Publication Activity Database

    Zavadil, Jiří; Ivanova, Z. G.; Kostka, Petr; Hamzaoui, M.; Soltani, M.

    2014-01-01

    Roč. 611, 25 October (2014), s. 111-116 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384; GA MŠk(CZ) 7AMB14SK009 Institutional support: RVO:67985882 ; RVO:67985891 Keywords : Erbium * Photoluminescence * Antimonite glasses Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (USMH-B) Impact factor: 2.999, year: 2014

  14. Quenching mechanisms of porous silicon photoluminescence with an electron beam at different intensity

    CERN Document Server

    Kostishko, B M

    2001-01-01

    The effect of the particles flux density by the electron irradiation of the porous silicon on the kinetics of the surface complexes desorption and correspondingly on the photoluminescence quenching degree is studied. It is shown, that by the electron beam density above 5.5 x 10 sup 1 sup 3 cm sup - sup 2 s sup - sup 1 there occurs the surface charging and decrease in its adsorption ability relative to the donor molecular groups

  15. Photoluminescence enhancement in nanocomposite thin films of CdS-ZnO

    International Nuclear Information System (INIS)

    Ayyub, Pushan; Vasa, Parinda; Taneja, Praveen; Banerjee, Rajarshi; Singh, B.P.

    2005-01-01

    We show that the photoluminescence emitted from a dense, two-component quantum dot ensemble on a thin film is significantly higher and decays much faster than that from quantum dots of either of the two pure systems (CdS and ZnO). The semiconductor nanocomposite, in which the characteristic grain size of each species was 2-3 nm, was deposited directly on Si wafers by high-pressure magnetron sputtering, and exhibits a single, relatively sharp optical absorption edge

  16. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

    Science.gov (United States)

    Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

    2011-10-01

    We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

  17. Photoluminescence study of CdSe nanorods embedded in a PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India)

    2013-03-15

    Nanometer-sized semiconductor CdSe nanorods have been successfully grown within polyvinyl alcohol (PVA) matrix by in situ technique. PVA:n-CdSe nanorods are characterized by X-ray diffraction, transmission electron microscopy, UV-vis spectrophotometer and photoluminescence spectroscopy. The photoluminescence spectra of PVA:n-CdSe nanorods are studied at different excitation wavelengths. PVA:n-CdSe nanorods have demonstrated to exhibit strong and well-defined green photoluminescence emission. The long-term stability of the PL properties of PVA:n-CdSe nanorods is also investigated in view of possible applications of polymer nanocomposites. The linear optical constants such as the extinction coefficient (k), real ({epsilon}{sub 1}) and imaginary ({epsilon}{sub 2}) dielectric constant, optical conductivity ({sigma}{sub opt}) are calculated for PVA:n-CdSe nanorods. The optical properties i.e. good photostability and larger stokes shift suggesting to apply PVA:n-CdSe nanorods in bioimaging applications. - Highlights: Black-Right-Pointing-Pointer In situ synthesis of PVA:n-CdSe via chemical bath method at room temperature. {open_square} From TEM image, the three arm nanorods morphology of PVA:n-CdSe is obtained. Black-Right-Pointing-Pointer The optical constants i.e. n, k, {epsilon}{sub 1}, {epsilon}{sub 2} and {sigma}{sub opt} are calculated. Black-Right-Pointing-Pointer Exhibiting green band photoemission peak at 540 nm.

  18. Photoluminescence and nonlinear optical phenomena in plasmonic random media—A review of recent works

    International Nuclear Information System (INIS)

    Araújo, Cid B. de; Kassab, Luciana R.P.; Tolentino Dominguez, C.; Ribeiro, Sidney J.L.; Gomes, Anderson S.L.; Reyna, Albert S.

    2016-01-01

    Photoluminescence properties and nonlinear optical response of metal–dielectric nanocomposites (MDNCs)—germanate glasses, bio-cellulose membranes and colloids containing either silver (Ag) or gold (Au) nanoparticles (NPs)—are reviewed. The phenomena discussed are: i. the photoluminescence enhancement observed from rare-earth doped PbO–GeO 2 glass containing Ag NPs; ii. optical amplification at 1530 nm in RIB waveguides made with PbO–GeO 2 thin films covered with Au NPs; iii. Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs; iv. the nonlinearity management of high-order processes in colloids containing Ag NPs suspended in acetone. In all discussed cases the influence of the metallic NPs is clearly demonstrated and a procedure to control the nonlinear propagation of light beams in heterogeneous media is presented. - Highlights: • Large photoluminescence enhancement observed from rare-earth doped PbO–GeO 2 glass containing Ag NPs. • Optical amplification at 1530 nm in RIB waveguides made with PbO–GeO 2 thin films covered with Au NPs. • Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs. • The nonlinearity management of high-order processes in liquid colloids containing Ag NPs.

  19. Influence of LiBr on photoluminescence properties of porous silicon

    International Nuclear Information System (INIS)

    Dimassi, W.; Haddadi, I.; Bousbih, R.; Slama, S.; Ali Kanzari, M.; Bouaicha, M.; Ezzaouia, H.

    2011-01-01

    A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 o C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm. - Research highlights: → A new method based on the use of LiBr was developed to enhance nine times the photoluminescence of porous silicon. → The LiBr covers the silicon nanoparticles without changing in the optical excitation and emission spectra. → We observed a significant decrease of the reflectivity in the 350-500 nm spectral range.

  20. Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

    International Nuclear Information System (INIS)

    Nash, F.R.; Dixon, R.W.; Barnes, P.A.; Schumaker, N.E.

    1975-01-01

    The successful fabrication of high-quality DH GaAs lasers from a simplified three-layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority-carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direct and indirect excitation it is shown that a clearer understanding of the location and detrimental influences of defects in the GaAs laser structure may be obtained. For example, the width of the region of reduced luminescence associated with many defects is found to be very excitation dependent and is confirmed to arise fr []m reduced active region luminescence. The photoluminescent excitation techniques described should be useful in the study of other heterostructure devices and material systems

  1. Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

    International Nuclear Information System (INIS)

    Deus, R.C.; Cortés, J.A.; Ramirez, M.A.; Ponce, M.A.; Andres, J.; Rocha, L.S.R.

    2015-01-01

    Highlights: • CeO 2 nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO 2 and La-doped CeO 2 particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission

  2. Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

    Energy Technology Data Exchange (ETDEWEB)

    Deus, R.C. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Cortés, J.A., E-mail: leandrosrr89@gmail.com [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Ramirez, M.A. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Ponce, M.A. [Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) (CONICET-Universidad Nacional de Mar del Plata), Juan B. Justo 4302, 7600 Mar del Plata (Argentina); Andres, J. [Laboratório Interdisciplinar em Cerâmica, Instituto de Química, Universidade Estadual Paulista, P.O. Box 355, 14801-907 Araraquara, São Paulo (Brazil); Rocha, L.S.R. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); and others

    2015-10-15

    Highlights: • CeO{sub 2} nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO{sub 2} and La-doped CeO{sub 2} particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission.

  3. Influence of LiBr on photoluminescence properties of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dimassi, W., E-mail: dimassi_inrst@yahoo.f [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia); Haddadi, I.; Bousbih, R.; Slama, S.; Ali Kanzari, M.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia)

    2011-05-15

    A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 {sup o}C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm. - Research highlights: {yields} A new method based on the use of LiBr was developed to enhance nine times the photoluminescence of porous silicon. {yields} The LiBr covers the silicon nanoparticles without changing in the optical excitation and emission spectra. {yields} We observed a significant decrease of the reflectivity in the 350-500 nm spectral range.

  4. From photoluminescence emissions to plasmonic properties in platinum nanoparticles embedded in silica by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Bornacelli, J., E-mail: jhbornacelli@gmail.com [Instituto de Física, Universidad Nacional Autónoma de México, 04510 México D.F. (Mexico); Silva-Pereyra, H.G. [IPICyT, Division de Materiales Avanzados, Camino a la presa San Jose 2055, San Luis Potosi, S.L.P. 78216 (Mexico); Rodríguez-Fernández, L. [Instituto de Física, Universidad Nacional Autónoma de México, 04510 México D.F. (Mexico); Avalos-Borja, M. [IPICyT, Division de Materiales Avanzados, Camino a la presa San Jose 2055, San Luis Potosi, S.L.P. 78216 (Mexico); Centro de Nanociencias y Nanotecnologia – Universidad Nacional Autónoma de México, A. Postal 2681, Ensenada, B.C. (Mexico); Oliver, A. [Instituto de Física, Universidad Nacional Autónoma de México, 04510 México D.F. (Mexico)

    2016-11-15

    We have studied photoluminescence emission and optical absorption from platinum nanoparticles (Pt-nps) embedded in a silica matrix obtained by ion implantation. The Pt ions were implanted at 2 MeV and the nanoclusters were nucleated after thermal treatment at 600, 800, and 1100 °C under two different atmospheres: argon gas and a reducing atmosphere compound of H{sub 2} and N{sub 2}. The luminescent spectrum is broader (400–600 nm) and is peaked at 530 nm, but its intensity decreases as the annealing temperature increases. However, at high annealing temperatures, a Mie resonance at 220 nm emerges in the absorption spectrum. We then observed a transition between two optical properties in a system of Pt-nps embedded in silica: from molecule-like properties such as photoluminescence emission to localized surface plasmon absorption. - Highlights: • Photoluminescence (PL) from ion-implanted Pt-nps in silica have been demonstrated. • PL properties depend on the temperature and atmosphere used to form Pt-nps in silica. • PL is quenched for samples with larger Pt-nps, however a Mie resonance appear. • Transition from molecule-like to bulk-like properties of Pt-nps in silica is reveled.

  5. Hole transport and photoluminescence in Mg-doped InN

    Energy Technology Data Exchange (ETDEWEB)

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  6. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Effect of chemical heterogeneity on photoluminescence of graphite oxide treated with S-/N-containing modifiers

    Science.gov (United States)

    Ebrahim, Amani M.; Rodríguez-Castellón, Enrique; Montenegro, José María; Bandosz, Teresa J.

    2015-03-01

    Graphite oxide (GO) obtained using Hummers method was modified by hydrothermal treatment either with sulfanilic acid or polystyrene (3-ammonium) sulfonate at 100 °C or 85 °C, respectively. Both modifiers contain sulfur in the oxidized forms and nitrogen in the reduced forms. The materials were characterized using FTIR, XPS, thermal analysis, potentiometric titration and SEM. Their photoluminescent properties and their alteration with an addition of Ag+ were also measured. As a result of these modifications nitrogen was introduced to the graphene layers as amines, imides, amides, and sulfur as sulfones and sulfonic acids. Moreover, the presence of polyaniline was detected. This significantly affected the polarity, acid-base character, and conductivity of the materials. Apparently carboxylic groups of GO were involved in the surface reactions. The modified GOs lost their layered structure and the modifications resulted in the high degree of structural and chemical heterogeneity. Photoluminescence in visible light was recorded and linked to the presence of heteroatoms. For the polystyrene (3-ammonium) sulfonate modified sample addition of Ag+ quenched the photoluminescence at low wavelength showing sensitivity as a possible optical detector. No apparent effect was found for the sulfanilic acid modified sample.

  8. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Shirazi, Roza, E-mail: rozas@fotonik.dtu.dk [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Kovacs, Andras [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grunberg Institute, Forschungszentrum Julich, 52425 Julich (Germany); Dan Corell, Dennis [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Gritti, Claudia [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Kardynal, Beata [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); PGI-9, Forschungszentrum Julich, JARA FIT, 52425 Julich (Germany)

    2014-01-15

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active.

  9. Study of defect generated visible photoluminescence in zinc oxide nano-particles prepared using PVA templates

    Energy Technology Data Exchange (ETDEWEB)

    Oudhia, A. [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Choudhary, A., E-mail: aarti.bhilai@gmail.com [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Sharma, S.; Aggrawal, S. [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Dhoble, S.J. [RTM University Nagpur, Maharashtra (India)

    2014-10-15

    Intrinsic defect generated photoluminescence (PL) in zinc oxide nanoparticles (NPs) obtained by a PVA template based wet-chemical process has been studied. A good controllability was achieved on the surface defects, structure and the morphology of ZnO NPs through the variation of solvents used in synthesis. The PL emission strongly depended on the defect structure and morphology. SEM, XRD, annealing and PL excitation studies were used to analyze the types of defects involved in the visible emission as well as the defect concentration. The mechanism for the blue, green and yellow emissions was proposed. The spectral content of the visible emission was controlled through generation/removal of defects through the shape transformation or annealing by focusing on defect origins and broad controls. - Highlights: • ZnO nanoparticles were synthesized using poly-vinyl alcohol template in various solvents. • The structure and morphology of ZnO nanoparticles were depended on dielectric constant and boiling point of solvents. • Photoluminescence properties of ZnO nanoparticles were studied. • Maximum optical absorbance and Photoluminescence intensity were found in ethanolic preparation. • ZnO nanoparticles were annealed at different temperatures for detection of defect emission.

  10. Resonant silicon nanoparticles for enhancement of light absorption and photoluminescence from hybrid perovskite films and metasurfaces.

    Science.gov (United States)

    Tiguntseva, E; Chebykin, A; Ishteev, A; Haroldson, R; Balachandran, B; Ushakova, E; Komissarenko, F; Wang, H; Milichko, V; Tsypkin, A; Zuev, D; Hu, W; Makarov, S; Zakhidov, A

    2017-08-31

    Recently, hybrid halide perovskites have emerged as one of the most promising types of materials for thin-film photovoltaic and light-emitting devices because of their low-cost and potential for high efficiency. Further boosting their performance without detrimentally increasing the complexity of the architecture is critically important for commercialization. Despite a number of plasmonic nanoparticle based designs having been proposed for solar cell improvement, inherent optical losses of the nanoparticles reduce photoluminescence from perovskites. Here we use low-loss high-refractive-index dielectric (silicon) nanoparticles for improving the optical properties of organo-metallic perovskite (MAPbI 3 ) films and metasurfaces to achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally a 50% enhancement of photoluminescence intensity from a perovskite layer with silicon nanoparticles and 200% enhancement for a nanoimprinted metasurface with silicon nanoparticles on top. Strong increase in light absorption is also demonstrated and described by theoretical calculations. Since both silicon nanoparticle fabrication/deposition and metasurface nanoimprinting techniques are low-cost, we believe that the developed all-dielectric approach paves the way to novel scalable and highly effective designs of perovskite based metadevices.

  11. Different approaches for sensing captopril based on functionalized graphene quantum dots as photoluminescent probe

    Energy Technology Data Exchange (ETDEWEB)

    Toloza, Carlos A.T.; Khan, Sarzamin; Silva, Renan L.D. [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Romani, Eric C.; Freire, F.L. [Department of Physics, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Aucélio, Ricardo Q., E-mail: aucelior@puc-rio.br [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil)

    2016-11-15

    The determination of captopril is proposed using graphene quantum dots produced by the pyrolysis of citric acid and glutathione (GSH-GQDs). Captopril induces both quenching and spectral red-shifting in the photoluminescence from aqueous dispersions of GSH-GQDs. By employing Fe{sup 3+} as mediator (that enables signal quenching of GSH-GQDs), the presence of captopril restored the photoluminescence of quantum dots. Under optimized experimental conditions, the signal quenching from the GSH-GQDs as function of the concentration of captopril showed a linear response range covering three orders of magnitude (10{sup −6} to 10{sup −4} mol L{sup −1}). The proposed approaches were tested by determining captopril in simulated samples and in commercial pharmaceutical formulations. The measurement of either the spectral shifting observed of the GSH-GQDs probe or the photoluminescence switch on/off using GQDs-GSH-Fe{sup 3+} resulted in satisfactory recoveries of captopril, showing the quantitative sensing potential.

  12. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    International Nuclear Information System (INIS)

    Shirazi, Roza; Kovacs, Andras; Dan Corell, Dennis; Gritti, Claudia; Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul; Kardynal, Beata

    2014-01-01

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active

  13. Controlled fabrication and tunable photoluminescence properties of Mn2+ doped graphene–ZnO composite

    International Nuclear Information System (INIS)

    Luan, Xinglong; Zhang, Yihe; Tong, Wangshu; Shang, Jiwu; An, Qi; Huang, Hongwei

    2014-01-01

    Highlights: • Graphene–ZnO composites were synthesized by a mixed solvothermal method. • ZnO quantum dots are distributed uniformly on the graphene sheets. • A possible hypothesis is raised for the influence of graphene oxide on the nucleation of ZnO. • Mn 2+ doped graphene–ZnO composites were fabricated and the emission spectra can be tuned by doping. - Abstract: Graphene–ZnO composites (G–ZnO) with controlled morphology and photoluminescence property were synthesized by a mixed solvothermal method. Mixed solvent were composed by dimethyl sulfoxide and ethylene glycol. Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectra were used to characterize G–ZnO. Graphene as a substrate can help the distribution and the dispersity of ZnO, and a possible model of the interaction between graphene oxide and ZnO particles is proposed. At the same time, graphene also reduce the size of ZnO particles to about 5 nm. Furthermore, Mn 2+ ions dopes G–ZnO successfully by the mixed solvothermal synthesis and the doping of Mn 2+ makes G–ZnO shift red from 465 nm to 548 nm and 554 nm in the emission spectrum. The changes of the emission spectrum by the adding of Mn 2+ make G–ZnO have tunable photoluminescence spectrum which is desirable for practical applications

  14. Hydrophobic perfluoro-silane functionalization of porous silicon photoluminescent films and particles

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, C.; Laplace, P.; Gallach-Pérez, D.; Pellacani, P.; Martín-Palma, R.J. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Torres-Costa, V. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020, Ispra (Italy); Manso Silván, M., E-mail: miguel.manso@uam.es [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain)

    2016-09-01

    Highlights: • Hydrophobic functionalization of porous silicon structures. • Perfluorooctyl group binding confirmed by XPS. • Improved stability face to extreme oxidation conditions. • Perfluorooctyl functionalization compatible with photoluminescence of porous silicon particles. - Abstract: Luminescent structures based on semiconductor quantum dots (QDs) are increasingly used in biomolecular assays, cell tracking systems, and in-vivo diagnostics devices. In this work we have carried out the functionalization of porous silicon (PSi) luminescent structures by a perfluorosilane (Perfluoro-octyltriethoxysilane, PFOS) self assembly. The PFOS surface binding (traced by X-ray photoelectron spectroscopy) and photoluminescence efficiency were analyzed on flat model PSi. Maximal photoluminescence intensity was obtained from PSi layers anodized at 110 mA/cm{sup 2}. Resistance to hydroxylation was assayed in H{sub 2}O{sub 2}:ethanol solutions and evidenced by water contact angle (WCA) measurements. PFOS-functionalized PSi presented systematically higher WCA than untreated PSi. The PFOS functionalization was found to slightly improve the aging of the PSi particles in water giving rise to particles with longer luminescent life. Confirmation of PFOS binding to PSi particles was derived from FTIR spectra and the preservation of luminescence was observed by fluorescence microscopy. Such functionalization opens the possibility of promoting hydrophobic-hydrophobic interactions between biomolecules and fluorescent QD structures, which may enlarge their biomedical applications catalogue.

  15. Photoluminescence and semiconducting behavior of Fe, Co, Ni and Cu implanted in heavy metal oxide glasses

    Directory of Open Access Journals (Sweden)

    Mohamed A. Marzouk

    2016-07-01

    Full Text Available Transition metal ions (0.5 wt% of Fe2O3, CoO, NiO or CuO doped heavy metal oxide glasses having chemical composition of 60PbO·20Bi2O3·20 MxOy mol% (where MxOy = B2O3 or SiO2 or P2O5 were prepared by conventional melt annealing method. Combined optical and photoluminescence properties have been measured and employed to evaluate the prepared glassy samples. From the absorption edge data, the values of the optical band gap Eopt, Urbach energy (ΔE and refractive index were calculated to estimate semiconducting behavior. Photoluminescence and values of the optical energy gap were found to be dependent on the glass composition. The variations of the photoluminescence intensity, values of optical band gap, Urbach energy and refractive index gave an indication to use the prepared glasses for design of novel functional optical materials with higher optical performance.

  16. Photoluminescence and nonlinear optical phenomena in plasmonic random media—A review of recent works

    Energy Technology Data Exchange (ETDEWEB)

    Araújo, Cid B. de, E-mail: cid@df.ufpe.br [Departamento de Física , Universidade Federal de Pernambuco, 50670-901 Recife , PE (Brazil); Kassab, Luciana R.P. [Faculdade de Tecnologia de São Paulo (FATEC-SP , CEETEPS), 01124-060 São Paulo , SP (Brazil); Tolentino Dominguez, C. [Laboratório de Óptica Biomédica e Imagem , Universidade Federal de Pernambuco , Recife 50740-530, PE (Brazil); Ribeiro, Sidney J.L. [Institute of Chemistry , São Paulo State University (UNESP), 14801-970 Araraquara , SP (Brazil); Gomes, Anderson S.L.; Reyna, Albert S. [Departamento de Física , Universidade Federal de Pernambuco, 50670-901 Recife , PE (Brazil)

    2016-01-15

    Photoluminescence properties and nonlinear optical response of metal–dielectric nanocomposites (MDNCs)—germanate glasses, bio-cellulose membranes and colloids containing either silver (Ag) or gold (Au) nanoparticles (NPs)—are reviewed. The phenomena discussed are: i. the photoluminescence enhancement observed from rare-earth doped PbO–GeO{sub 2} glass containing Ag NPs; ii. optical amplification at 1530 nm in RIB waveguides made with PbO–GeO{sub 2} thin films covered with Au NPs; iii. Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs; iv. the nonlinearity management of high-order processes in colloids containing Ag NPs suspended in acetone. In all discussed cases the influence of the metallic NPs is clearly demonstrated and a procedure to control the nonlinear propagation of light beams in heterogeneous media is presented. - Highlights: • Large photoluminescence enhancement observed from rare-earth doped PbO–GeO{sub 2} glass containing Ag NPs. • Optical amplification at 1530 nm in RIB waveguides made with PbO–GeO{sub 2} thin films covered with Au NPs. • Random Laser emission from a bio-cellulose membrane infiltrated with Rhodamine 6G and containing Ag NPs. • The nonlinearity management of high-order processes in liquid colloids containing Ag NPs.

  17. Glutathione-assisted synthesis of star-shaped zinc oxide nanostructures and their photoluminescence behavior

    International Nuclear Information System (INIS)

    Kavita; Singh, Karamjit; Kumar, Sunil; Bhatti, H.S.

    2014-01-01

    Star-shaped ZnO nanostructures have been synthesized by facile chemical co-precipitation method in the presence of glutathione. Glutathione, a reducing agent, shape modifier and an entirely benign antioxidant; acts as a capping agent in the present study. The powder X-ray diffraction patterns indicate that the novel star-shaped ZnO nanostructures exhibit hexagonal structure. Fourier transform infra-red spectroscopic studies confirmed the anchoring of glutathione on ZnO nanocrystals. Transmission electron microscopy and field emission scanning electron microscopy revealed the star and cube-shaped shaped morphology of the glutathione modified nanocrystals. Optical characterization of synthesized nanocrystals has been done by UV–vis absorption spectroscopy and steady state photoluminescence spectroscopy. Recorded Photoluminescence spectra confirm the multi-chromatic photoluminescence behavior of the synthesized nanostructures. - Highlights: • Morphology has been investigated as a function of capping agent concentration. • Comparison between capped and uncapped ZnO nanoparticles has been examined. • Diffraction scans show the crystalline wurtzite structure of synthesized product. • Recorded PL spectra show the multichromatic behavior of synthesized nanostructures

  18. Photoluminescence in Spray Pyrolysis Deposited β-In2S3 Thin Films

    Science.gov (United States)

    Jayakrishnan, R.

    2018-04-01

    Spray pyrolysis deposited In2S3 thin films exhibit two prominent photoluminescent emissions. One of the emissions is green in color and centered at around ˜ 540 nm and the other is centered at around ˜ 690 nm and is red in color. The intensity of the green emission decreases when the films are subjected to annealing in air or vacuum. The intensity of red emission increases when films are air annealed and decreases when vacuum annealed. Vacuum annealing leads to an increase in work function whereas air annealing leads to a decrease in work function for this thin film system relative to the as deposited films indicating changes in space charge regions. Surface photovoltage analysis using a Kelvin probe leads to the conclusion that inversion of band bending occurs as a result of annealing. Correlating surface contact potential measurements using a Kelvin probe, x-ray photoelectron spectroscopy and photoluminescence, we conclude that the surface passivation plays a critical role in controlling the photoluminescence from the spray pyrolysis deposited for In2S3 thin films.

  19. Highly sensitive detection of ionizing radiations by a photoluminescent uranyl organic framework

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Jian; Wang, Yaxing; Liu, Wei; Yin, Xuemiao; Chen, Lanhua; Diwu, Juan; Chai, Zhifang; Wang, Shuao [School for Radiological and interdisciplinary Sciences (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou (China); Zou, Youming [High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui (China); Albrecht-Schmitt, Thomas E. [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL (United States); Liu, Guokui [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL (United States)

    2017-06-19

    Precise detection of low-dose X- and γ-radiations remains a challenge and is particularly important for studying biological effects under low-dose ionizing radiation, safety control in medical radiation treatment, survey of environmental radiation background, and monitoring cosmic radiations. We report here a photoluminescent uranium organic framework, whose photoluminescence intensity can be accurately correlated with the exposure dose of X- or γ-radiations. This allows for precise and instant detection of ionizing radiations down to the level of 10{sup -4} Gy, representing a significant improvement on the detection limit of approximately two orders of magnitude, compared to other chemical dosimeters reported up to now. The electron paramagnetic resonance analysis suggests that with the exposure to radiations, the carbonyl double bonds break affording oxo-radicals that can be stabilized within the conjugated uranium oxalate-carboxylate sheet. This gives rise to a substantially enhanced equatorial bonding of the uranyl(VI) ions as elucidated by the single-crystal structure of the γ-ray irradiated material, and subsequently leads to a very effective photoluminescence quenching through phonon-assisted relaxation. The quenched sample can be easily recovered by heating, enabling recycled detection for multiple runs. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    International Nuclear Information System (INIS)

    Torres-Torres, C.; García-Cruz, M.L.; Castañeda, L.; Rangel Rojo, R.; Tamayo-Rivera, L.; Maldonado, A.; Avendaño-Alejo, M.

    2012-01-01

    Chromium doped zinc oxide thin solid films were deposited on soda–lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol–gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: ► Enhancement in photoluminescence for chromium doped zinc oxide films is presented. ► A strong and ultrafast optical Kerr effect seems to result from quantum confinement. ► Photoconductive properties for optical and optoelectronic functions were observed.

  1. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Torres, C., E-mail: crstorres@yahoo.com.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, Mexico, DF 07738 (Mexico); Garcia-Cruz, M.L. [Centro de Investigacion en Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Castaneda, L., E-mail: luisca@sirio.ifuap.buap.mx [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Rangel Rojo, R. [CICESE/Depto. de Optica, A. P. 360, Ensenada, BC 22860 (Mexico); Tamayo-Rivera, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Mexico, DF 01000 (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN-SEES, A. P. 14740, Mexico DF 07000 (Mexico); Avendano-Alejo, M., E-mail: imax_aa@yahoo.com.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, A. P. 70-186, 04510, DF (Mexico); and others

    2012-04-15

    Chromium doped zinc oxide thin solid films were deposited on soda-lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol-gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: Black-Right-Pointing-Pointer Enhancement in photoluminescence for chromium doped zinc oxide films is presented. Black-Right-Pointing-Pointer A strong and ultrafast optical Kerr effect seems to result from quantum confinement. Black-Right-Pointing-Pointer Photoconductive properties for optical and optoelectronic functions were observed.

  2. Influence of Parameters of a Printing Plate on Photoluminescence of Nanophotonic Printed Elements of Novel Packaging

    Directory of Open Access Journals (Sweden)

    Olha Sarapulova

    2015-01-01

    Full Text Available In order to produce nanophotonic elements for smart packaging, we investigated the influence of the parameters of screen and offset gravure printing plates on features of printed application of coatings with nanophotonic components and on parameters of their photoluminescence. To determine the dependence of luminescence intensity on the thickness of solid coating, we carried out the formation of nanophotonic solid surfaces by means of screen printing with different layer thickness on polypropylene film. The obtained analytical dependencies were used to confirm the explanation of the processes that occur during the fabrication of nanophotonic coverings with offset gravure printing plates. As a result of experimental studies, it was determined that the different character of the dependency of total luminescence intensity of nanophotonic elements from the percentage of a pad is explained by the use of different types of offset gravure printing plates, where the size of raster points remains constant in one case and changes in the other case, while the depth of the printing elements accordingly changes or remains constant. To obtain nanophotonic areas with predetermined photoluminescent properties, the influence of investigated factors on changes of photoluminescent properties of nanophotonic printed surfaces should be taken into consideration.

  3. Phase evolution and photoluminescence enhancement of CePO4 nanowires from a low phosphate concentration system

    International Nuclear Information System (INIS)

    Xu Pengfei; Yu Ranbo; Zong Lingbo; Wang Jiali; Wang Dan; Deng Jinxia; Chen Jun; Xing Xianran

    2013-01-01

    Uniform CePO 4 nanowires have been successfully synthesized in a low phosphate concentration system through a single-step hydrothermal process. The low phosphate concentration might decrease the surface PO 4 3− adsorption of the as-synthesized CePO 4 nanowires efficiently and benefit their photoluminescence. The CePO 4 nanowires were identified to go through phase evolution from pure monoclinic to mixed hexagonal and monoclinic phase by only increasing the initial molar ratio of cerium and phosphate source (denoted as Ce/P). Interestingly, the strongest photoluminescence was observed in the CePO 4 nanowires synthesized with the initial Ce/P of 4:1, which proved to be the critical phase evolution point between the hexagonal and monoclinic CePO 4 . Therefore, the strong photoluminescence could be explained by the existence of the structure-sensitive energy level in the CePO 4 . This kind of photoluminescence enhancement would be a meaningful reference for design of other photoluminescent materials, in which the photoluminescent emission might be related to the structure-sensitive energy level. Additionally, the growth processes of CePO 4 nanowires based on related well-designed experiments were proposed.

  4. Preparation and photoluminescence properties of Tm{sup 3+}-doped ZrO{sub 2} nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Mingli [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Zhao, Jianling, E-mail: hebutzhaoj@126.com [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Xu, Rongqing [Tianjin Zhonghuan Advanced Material & Technology Co., LTD, Tianjin 300384 (China); Fu, Ning [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Wang, Xixin, E-mail: xixinwang@126.com [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-07-25

    Tm{sup 3+}-doped ZrO{sub 2} nanotube arrays were prepared by anodization of a Zr–Tm alloy (3 at.% Tm) obtained by a powder metallurgical method. The morphologies, structures, elemental valence, and photoluminescence properties were characterized by using scanning electron microscope, X-ray diffractometer, X-ray photoelectron spectrometer and photoluminescence analyser, respectively. Results show that preparing conditions and annealing temperatures have significant effects on the crystalline structure and photoluminescence performance. The sample TmZNT-Org prepared in formamide + glycerol organic solution is mainly monoclinic phase and the sample TmZNT-Aq prepared in aqueous solution is mainly tetragonal phase. The sample TmZNT-Org had the strongest photoluminescence peak when annealed at 800 °C, whereas both TmZNT-Aq samples annealed at 600 °C and 800 °C had the strongest photoluminescence peak. The monoclinic phase was conductive to the emission at 454 nm while the tetragonal phase was conductive to the emission at 460 nm. - Highlights: • Tm{sup 3+}-doped ZrO{sub 2} nanotube arrays were prepared by anodization of a Zr-Tm alloy. • Crystal structure had remarkable effects on the photoluminescence properties. • The monoclinic phase was conductive to the emission at 454 nm. • The tetragonal phase was conductive to the emission at 460 nm.

  5. Synthesis, structure and photoluminescence of (PLAGH){sub 2}[ZnCl{sub 4}] and comparative analysis of photoluminescence properties with tris(2,2′-bipyridine)ruthenium(II)

    Energy Technology Data Exchange (ETDEWEB)

    Radanović, Mirjana M. [University of Novi Sad, Faculty of Sciences, Novi Sad (Serbia); Jelić, Miodrag G., E-mail: jelicmgm@uns.ac.rs [University of Novi Sad, Faculty of Technical Sciences, Novi Sad (Serbia); Romčević, Nebojša Ž. [University of Belgrade, Institute of Physics, Belgrade (Serbia); Boukos, Nikos [National Centre for Scientific Research “Demokritos”, Institute of Materials Science, Athens (Greece); Vojinović-Ješić, Ljiljana S.; Leovac, Vukadin M. [University of Novi Sad, Faculty of Sciences, Novi Sad (Serbia); Hadžić, Branka B. [University of Belgrade, Institute of Physics, Belgrade (Serbia); Bajac, Branimir M. [University of Novi Sad, Faculty of Technology, Novi Sad (Serbia); Nađ, Laslo F. [University of Novi Sad, Faculty of Technical Sciences, Novi Sad (Serbia); Chandrinou, Chrysoula [National Centre for Scientific Research “Demokritos”, Institute of Materials Science, Athens (Greece); Baloš, Sebastian S. [University of Novi Sad, Faculty of Technical Sciences, Novi Sad (Serbia)

    2015-10-15

    Highlights: • New zinc(II) complex with pyridoxalaminoguanidine was synthesized. • The enhancement of the photoluminescence due to the compound formation was achieved. • Very high photoluminescence of Zn(II) compound was noticed. • Comparative analysis of photoluminescence with tris(2,2′-bipyridine) ruthenium(II) was provided. - Abstract: The first compound of zinc(II) containing pyridoxalaminoguanidine has been synthesized and characterized by elemental analysis, infrared spectra, conductometric measurements and X-ray crystallography. Single crystals of the compound were obtained in the reaction of methanolic solution of zinc(II) chloride and pyridoxalaminoguanidine hydrochloride. In this compound the coordination of chelate ligand is absent and tetrachlorido complex of zinc(II) with pyridoxalaminuguanidinium cation as contraion is obtained. Photoluminescence spectra were measured. Lorentzian multipeak technique was used to determine peak wavelengths and their intensities. Photoluminescence spectroscopy upon 325, 488 and 514 nm laser excitation light was used to obtain results. This novel compound of zinc(II) was compared to the well-known organic light emitting diode material—ruthenium(II) complex with bypiridine i.e., tris(2,2′-bipyridine)ruthenium(II), under the same circumstances and the identical experimental setup. A scheme of energy levels and transitions is proposed to explain the obtained experimental results.

  6. Three new Ag(I) coordination architectures based on mixed ligands: Syntheses, structures and photoluminescent properties

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yamin, E-mail: liyamin@henu.edu.cn [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Xiao, Changyu; Li, Shu; Chen, Qi; Li, Beibei; Liao, Qian; Niu, Jingyang [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China)

    2013-04-15

    Three new silver (I) coordination complexes, [Ag{sub 2}(1,2-bdc)(phdat)]{sub n} (1), [Ag{sub 2}(NO{sub 2}-bdc)(phdat)]{sub n} (2), [Ag{sub 4}(nta){sub 3}(phdat)NO{sub 3}]{sub n} (3) (1,2-bdc=phthalic acid dianion, NO{sub 2}-bdc=5-nitro-1,3-benzenedicarboxylic acid dianion, nta=nicotinic acid anion, phdat=2,4-diamine-6-phenyl-1,3,5-triazine) have been hydrothermally synthesized by the reactions of silver nitrate and phdat with the homologous ligands 1,2-H{sub 2}bdc, NO{sub 2}-H{sub 2}bdc, and Hnta, respectively, and characterized by single-crystal X-ray diffractions, IR spectra, elemental analyses thermogravimetric analyses (TGA). The compound 1 exhibits a chiral 3D network with cbs/CrB self-dual topological net, which contains two kinds of single helical chains. For compound 2, the 3D network is comprised of two kinds of similar 2D sheets with the topological symbol of sql-type packed in AABBAA mode by Ag–N/O weakly contacts. And compound 3 has 2D double layer architecture, consisting of the 2D plane with hcb-type topological symbol connected by Ag–O weakly coordinations. The photoluminescent properties associated with the crystal structures of three compounds have also been measured. - Graphical abstract: Three new silver(I) coordination complexes 1–3 have been synthesized and characterized by single-crystal X-ray diffractions, IR spectra, elemental analyses, thermogravimetric analyses (TGA) and photoluminescent spectra. Highlights: ► The compound 1 exhibits a novel chiral 3D network with two kinds of single helical chains. ► 3D or 2D new Ag coordination complexes. ► The photoluminescent properties have been measured.

  7. Effect of ionizing radiation on in situ Raman scattering and photoluminescence of silica optical fibers

    International Nuclear Information System (INIS)

    Bilodeau, T.G.; Ewing, K.J.; Nau, G.M.; Aggarwal, I.D.

    1995-01-01

    Raman fiber optic chemical sensors provide remote situ characterization capability. One application of Raman fiber optic chemical sensors is the characterization of the contents of nuclear waste tanks. In these tanks it is expected that approximately 20 meters of optical fiber will be exposed to radiation levels between 100 and 1,000 rads/hour. In support of this work two silica optical fiber types (one a communications grade fiber and the other nominally radiation resistant) have been tested at the radiation levels expected in the tanks. Luminescence and Raman scattering measurements have been performed in situ with 488-nm excitation on two types of silica optical fiber exposed to a constant low to moderate dose rate of gamma radiation of 880 rads(Si)/hour from a 60 Co source for a total dose of greater than 45 krads. The nominally radiation-resistant fiber was also excited with 514.5-nm and near-infrared 830-nm laser radiation. The rate of the silica Raman signal decrease is more than three times greater for the visible excitation wavelengths than for the 830-nm excitation for the radiation resistant fiber. The behavior of the 650-nm photoluminescence line upon irradiation was different for the two fibers studied, both in terms of the shift of the 650-nm line and rate of increase of the normalized photoluminescence intensity. In all cases the photoluminescence from the fibers was less than the Raman intensity. No radioluminescence was observed in either fiber. The radiation resistant fiber exhibited photo bleaching effects on the Raman transmission when photoannealed with 488-nm laser light

  8. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    International Nuclear Information System (INIS)

    Yuan, Zhimin; Yang, Ping

    2013-01-01

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

  9. From photoluminescence to thermal emission: Thermally-enhanced PL (TEPL) for efficient PV (Conference Presentation)

    Science.gov (United States)

    Manor, Assaf; Kruger, Nimrod; Martin, Leopoldo L.; Rotschild, Carmel

    2016-09-01

    The Shockley-Queisser efficiency limit of 40% for single-junction photovoltaic (PV) cells is mainly caused by the heat dissipation accompanying the process of electro-chemical potential generation. Concepts such as solar thermo-photovoltaics (STPV) aim to harvest this heat loss by the use of a primary absorber which acts as a mediator between the sun and the PV, spectrally shaping the light impinging on the cell. However, this approach is challenging to realize due to the high operating temperatures of above 2000K required in order to generate high thermal emission fluxes. After over thirty years of STPV research, the record conversion efficiency for STPV device stands at 3.2% for 1285K operating temperature. In contrast, we recently demonstrated how thermally-enhanced photoluminescence (TEPL) is an optical heat-pump, in which photoluminescence is thermally blue-shifted upon heating while the number of emitted photons is conserved. This process generates energetic photon-rates which are comparable to thermal emission in significantly reduced temperatures, opening the way for a TEPL based energy converter. In such a device, a photoluminescent low bandgap absorber replaces the STPV thermal absorber. The thermalization heat induces a temperature rise and a blue-shifted emission, which is efficiently harvested by a higher bandgap PV. We show that such an approach can yield ideal efficiencies of 70% at 1140K, and realistic efficiencies of almost 50% at moderate concentration levels. As an experimental proof-of-concept, we demonstrate 1.4% efficient TEPL energy conversion of an Nd3+ system coupled to a GaAs cell, at 600K.

  10. Structural, morphological, optical and photoluminescence properties of HfO2 thin films

    International Nuclear Information System (INIS)

    Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

    2013-01-01

    Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

  11. Effect of ionizing radiation on in situ Raman scattering and photoluminescence of silica optical fibers

    Science.gov (United States)

    Bilodeau, T. G.; Ewing, K. J.; Nau, G. M.; Aggarwai, I. D.

    1995-02-01

    Raman fiber optic chemical sensors provide remote in situ characterization capability. One application of Raman fiber optic chemical sensors is the characterization of the contents of nuclear waste tanks. In these tanks it is expected that approximately 20 meters of optical fiber will be exposed to radiation levels between 100 and 1000 rads/hour. In support of this work two silica optical fiber types (one a communications grade fiber and the other nominally radiation resistant) have been tested at the radiation levels expected in the tanks. Luminescence and Raman scattering measurements have been performed in situ with 488-nm excitation on two types of silica optical fiber exposed to a constant low to moderate dose rate of gamma radiation of 880 rads(Si)/hour from a /sup 60/Co source for a total dose of greater than 45 krads. The nominally radiation-resistant fiber was also excited with 514.5-nm and near-infrared 830-nm laser radiation. The rate of the silica Raman signal decrease is more than three times greater for the visible excitation wavelengths than for the 830-nm excitation for the radiation resistant fiber. The behavior of the 650-nm photoluminescence line upon irradiation was different for the two fibers studied, both in terms of the shift of the 650-nm line and rate of increase of the normalized photoluminescence intensity. In all cases the photoluminescence from the fibers was less than the Raman intensity. No radioluminescence was observed in either fiber. The radiation resistant fiber exhibited photobleaching effects on the Raman transmission when photoannealed with 488-nm laser light.

  12. The influence of nitrogen on the photoluminescence of metastable III-V nitrides

    International Nuclear Information System (INIS)

    Hantke, K.

    2005-01-01

    The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

  13. Red photoluminescence and band edge shift from ZnO thin films

    International Nuclear Information System (INIS)

    Marotti, Ricardo E.; Badan, Juan A.; Quagliata, Eduardo; Dalchiele, Enrique A.

    2007-01-01

    The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed

  14. Diazonium salts as grafting agents and efficient radical-hydrosilylation initiators for freestanding photoluminescent silicon nanocrystals.

    Science.gov (United States)

    Höhlein, Ignaz M D; Kehrle, Julian; Helbich, Tobias; Yang, Zhenyu; Veinot, Jonathan G C; Rieger, Bernhard

    2014-04-07

    The reactivity of diazonium salts towards freestanding, photoluminescent silicon nanocrystals (SiNCs) is reported. It was found that SiNCs can be functionalized with aryl groups by direct reductive grafting of the diazonium salts. Furthermore, diazonium salts are efficient radical initiators for SiNC hydrosilylation. For this purpose, novel electron-deficient diazonium salts, highly soluble in nonpolar solvents were synthesized. The SiNCs were functionalized with a variety of alkenes and alkynes at room temperature with short reaction times. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Photoluminescence and pressure effects in short period InN/nGaN superlattices

    DEFF Research Database (Denmark)

    Staszczak, G.; Gorczyca, I.; Suski, T.

    2013-01-01

    Measurements of photoluminescence and its dependence on hydrostatic pressure are performed on a set of InN/nGaN superlattices with one InN monolayer and with different numbers of GaN monolayers. The emission energies, EPL, measured at ambient pressure, are close to the value of the band gap, Eg......, in bulk GaN, in agreement with other experimental findings. The pressure dependence of the emission energies, dEPL/dp, however, resembles that of the InN energy gap. Further, the magnitudes of both EPL and dEPL/dp are significantly higher than those obtained from ab-initio calculations for 1In...

  16. Identification of nasopharyngeal carcinoma from photoluminescence spectra of 3C-SiC nanocrystals

    Science.gov (United States)

    Wang, Li-Fen; Guo, Jun-Hong; Huang, Zhi-Chun; Gu, Jian-Sen; Feng, Li-Ren; Liu, Li-Zhe

    2017-09-01

    The identification of intracellular pH (pHi) during carcinogenesis progression plays a crucial role in the studies of biochemistry, cytology, and clinical medicine. In this work, 3C-SiC nanocrystals (NCs), which can effectively monitor the pH environment by using the linear relation between photoluminescence intensity and surface OH- and H+ concentration, are adapted as fluorescent probes for monitoring carcinogenesis progression of nasopharyngeal carcinoma. Our results demonstrated that 3C-SiC NCs are compatible with living cells and have low cytotoxicity. The pHi measurements in different carcinogenesis environments indicate the validity and sensitivity of this technology in identifying nasopharyngeal carcinoma in application.

  17. Diamond photonic crystal slab: leaky modes and modified photoluminescence emission of surface-deposited quantum dots

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Babchenko, Oleg; Varga, Marián; Kromka, Alexander; Čtyroký, Jiří; Pelant, Ivan

    2012-01-01

    Roč. 2, Dec (2012), s. 1-6 ISSN 2045-2322 R&D Projects: GA ČR(CZ) GAP108/11/0794; GA AV ČR(CZ) IAA101120804; GA AV ČR KJB100100903; GA ČR(CZ) GAP205/10/0046 Grant - others:AVČR(CZ) M100100902 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20670512 Keywords : photonic crystal * diamond * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.927, year: 2012 http://www.nature.com/srep/2012/121203/srep00914/full/srep00914.html

  18. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

    KAUST Repository

    Matsuki, Keiichiro; Pu, Jiang; Kozawa, Daichi; Matsuda, Kazunari; Li, Lain-Jong; Takenobu, Taishi

    2016-01-01

    We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

  19. Two-level quenching of photoluminescence in hexagonal boron nitride micropowder

    Energy Technology Data Exchange (ETDEWEB)

    Henaish, A. M. A. [Ural Federal University, NANOTECH Center, Mira Street, 19, Yekaterinburg, Russia, 620002 (Russian Federation); Tanta University, Physics Department, Tanta, Egypt, 31527 (Egypt); Vokhmintsev, A. S.; Weinstein, I. A., E-mail: i.a.weinstein@urfu.ru [Ural Federal University, NANOTECH Center, Mira Street, 19, Yekaterinburg, Russia, 620002 (Russian Federation)

    2016-03-29

    The processes of photoluminescence thermal quenching in the range RT – 800 K of h-BN micropowder in the 3.56 eV band were studied. It was found that two non-radiative channels of excitations relaxation with activation energies of 0.27 and 0.81 eV control the quenching for emission observed. It was assumed that emptying the shallow traps based on O{sub N}-centers characterized external quenching in RT – 530 K range and non-radiative mechanism of donor-acceptor recombination began to dominate at T > 530 K.

  20. ZnO nanorod arrays grown under different pressures and their photoluminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Meng Xiuqing [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Li Binghui [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Wang Xiaohua [National Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and technology, 7089 Weixing Road Changchun (China); Fan Xiwu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)

    2007-01-15

    The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays.

  1. ZnO nanorod arrays grown under different pressures and their photoluminescence properties

    International Nuclear Information System (INIS)

    Meng Xiuqing; Zhao Dongxu; Shen Dezhen; Zhang Jiying; Li Binghui; Wang Xiaohua; Fan Xiwu

    2007-01-01

    The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays

  2. White light photoluminescence from ZnS films on porous Si substrates

    International Nuclear Information System (INIS)

    Wang Caifeng; Li Weibing; Li Qingshan; Hu Bo

    2010-01-01

    ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated. (semiconductor materials)

  3. SEMICONDUCTOR MATERIALS: White light photoluminescence from ZnS films on porous Si substrates

    Science.gov (United States)

    Caifeng, Wang; Qingshan, Li; Bo, Hu; Weibing, Li

    2010-03-01

    ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.

  4. Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

    Directory of Open Access Journals (Sweden)

    Yu Lin Liu

    2012-06-01

    Full Text Available Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films.

  5. Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

    Science.gov (United States)

    Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

    2007-04-01

    We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

  6. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

    Science.gov (United States)

    2012-01-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

  7. Photoluminescence of rare-earth-doped Ca4Ga2S7

    International Nuclear Information System (INIS)

    Tagiev, B.G.; Tagiev, O.B.; Dzhabbarov, R.B.; Musaeva, N.N.; Kasumov, U.F.

    2001-01-01

    One obtained Ca 4 Ga 2 S 7 :REM crystals and studied their photoluminescent (PL) properties. One used Nd, Ce, Pr and Tb as promoters. It is shown that in all investigated crystals one observed PL intensity maximums at λ 543 nm that result from intracentre transitions of Nd 3+ ions. The excitation energy is effectively transferred nonradiatingly from Ce 3+ , Pr 3+ , Tb 3+ ions to Nd 3+ ion. In the case, Ce 3+ , Pr 3+ , Tb 3+ are the effective ions-sensitizers [ru

  8. C60-Fullerenes: detection of intracellular photoluminescence and lack of cytotoxic effects

    Directory of Open Access Journals (Sweden)

    Carroll David L

    2006-12-01

    Full Text Available Abstract We have developed a new method of application of C60 to cultured cells that does not require water-solubilization techniques. Normal and malignant cells take-up C60 and the inherent photoluminescence of C60 is detected within multiple cell lines. Treatment of cells with up to 200 μg/ml (200 ppm of C60 does not alter morphology, cytoskeletal organization, cell cycle dynamics nor does it inhibit cell proliferation. Our work shows that pristine C60 is non-toxic to the cells, and suggests that fullerene-based nanocarriers may be used for biomedical applications.

  9. Diameter Control and Photoluminescence of ZnO Nanorods from Trialkylamines

    Directory of Open Access Journals (Sweden)

    Tamar Andelman

    2007-01-01

    Full Text Available A novel solution method to control the diameter of ZnO nanorods is reported. Small diameter (2-3 nm nanorods were synthesized from trihexylamine, and large diameter (50–80 nm nanorods were synthesized by increasing the alkyl chain length to tridodecylamine. The defect (green emission of the photoluminescence (PL spectra of the nanorods varies with diameter, and can thus be controlled by the diameter control. The small ZnO nanorods have strong green emission, while the large diameter nanorods exhibit a remarkably suppressed green band. We show that this observation supports surface oxygen vacancies as the defect that gives rise to the green emission.

  10. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

    OpenAIRE

    Carolin M. Sutter-Fella Yanbo Li Matin Amani Joel W. Ager III Francesca M. Toma; Eli Yablonovitch Ian D. Sharp and Ali Javey

    2016-01-01

    Hybrid organic–inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low cost solution processability. Here we present a two step low pressure vapor assisted solution process to grow high quality homogeneous CH3NH3PbI3–xBrx perovskite films over the full band gap range of 1.6–2.3 eV. Photoluminescence light in versus light out charac...

  11. Fullerene-doped conducting polymers: effects of enhanced photoconductivity and quenched photoluminescence

    International Nuclear Information System (INIS)

    Yoshino, K.; Yin, X.H.; Muro, K.; Kiyomatsu, S.; Morita, S.; Zakhidov, A.A.; Noguchi, T.; Ohnishi, T.

    1993-01-01

    It is found that fullerenes (C 60 , C 70 ), due to their strong electron accepting abilities can be hole generators in conducting polymers sensitizing photoinduced charge transfer. Here we report that photoconductivity of poly(2,5-dialkoxy-p-phenylene-vinylene) OO-PPV is found to be remarkably enhanced by several orders of magnitude upon introduction of several mol % of C 60 . Positive polarons (P + ) photogenerated with increased efficiency due to autoionization of excitons and/or photopumping from fullerene are considered to be responsible for enhanced photoconductivity. Photoluminescence of polymer is strongly quenched upon C 60 doping due to dissociation of excitons accompanied by electron transfer to fullerene. (orig.)

  12. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Takabayashi, K.; Kamiya, I. [Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan); Sukrittanon, S. [Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Pan, J. L.; Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-10-27

    Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

  13. Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2002-01-01

    The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

  14. Blue-green and red photoluminescence in CaTiO3:Sm

    International Nuclear Information System (INIS)

    Figueiredo, Alberthmeiry T. de; Longo, Valeria M.; Lazaro, Sergio de; Mastelaro, Valmor R.; De Vicente, Fabio S.; Hernandes, Antonio C.; Siu Li, Maximo; Varela, Jose A.; Longo, Elson

    2007-01-01

    Blue-green and red photoluminescence (PL) emission in structurally disordered CaTiO 3 :Sm (CT:Sm) powders was observed at room temperature with laser excitation at 350.7 nm. The perovskite-like titanate CT:Sm powders prepared by a soft chemical processing at different temperatures of annealing were structurally characterized by X-ray diffraction (XRD) and X-ray absorption near-edge structure (XANES). The results indicate that the generation of the broad PL band is related to order-disorder degree in the perovskite-like structure

  15. Enhancement of two-photon photoluminescence and SERS for low-coverage gold films

    DEFF Research Database (Denmark)

    Novikov, Sergey M.; Beermann, Jonas; Frydendahl, Christian

    2016-01-01

    Electromagnetic field enhancement (FE) effects occurring in thin gold films 3-12-nm are investigated with two-photon photoluminescence (TPL) and Raman scanning optical microscopies. The samples are characterized using scanning electron microscopy images and linear optical spectroscopy. TPL images...... exhibit a strong increase in the level of TPL signals for films thicknesses 3-8-nm, near the percolation threshold. For some thicknesses, TPL measurements reveal super-cubic dependences on the incident power. We ascribe this feature to the occurrence of very strongly localized and enhanced electromagnetic...

  16. Two-level quenching of photoluminescence in hexagonal boron nitride micropowder

    International Nuclear Information System (INIS)

    Henaish, A. M. A.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-01-01

    The processes of photoluminescence thermal quenching in the range RT – 800 K of h-BN micropowder in the 3.56 eV band were studied. It was found that two non-radiative channels of excitations relaxation with activation energies of 0.27 and 0.81 eV control the quenching for emission observed. It was assumed that emptying the shallow traps based on O N -centers characterized external quenching in RT – 530 K range and non-radiative mechanism of donor-acceptor recombination began to dominate at T > 530 K.

  17. Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells

    Science.gov (United States)

    Higuchi, Fumito; Tajima, Michio; Ogura, Atsushi

    2017-07-01

    To analyze the early stage of oxygen precipitation in n-type multicrytalline Si, the spectral change of photoluminescence (PL) induced by thermal treatment at 450-650 °C was investigated in relation to the changes in excess donor and interstitial oxygen concentrations. We observed the characteristic PL bands in the near-band-edge region and sharp lines in the deep-level region in correspondence with the generation of thermal donors and new donors. The observed PL spectral variation is essentially the same as that in Czochralski-grown Si annealed at 450-650 °C.

  18. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, A [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009 (India); Chakrabarti, Mahuya [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009 (India); Ray, S K [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur (India); Bhowmick, D; Sanyal, D, E-mail: dirtha@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2011-04-20

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 {+-} 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of {approx} 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  19. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    Science.gov (United States)

    Sarkar, A.; Chakrabarti, Mahuya; Ray, S. K.; Bhowmick, D.; Sanyal, D.

    2011-04-01

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ~ 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  20. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    International Nuclear Information System (INIS)

    Sarkar, A; Chakrabarti, Mahuya; Ray, S K; Bhowmick, D; Sanyal, D

    2011-01-01

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ∼ 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  1. Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

    Science.gov (United States)

    Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

    2005-10-01

    We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

  2. Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

    OpenAIRE

    Zhang, Shuang; Yang, Jiong; Xu, Renjing; Wang, Fan; Li, Weifeng; Ghufran, Muhammad; Zhang, Yong-wei; Yu, Zongfu; Zhang, Gang; Qin, Qinghua; Lu, Yuerui

    2014-01-01

    Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (2 to 5 layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us ...

  3. Nonlinear behavior of photoluminescence from silicon particles under two-photon excitation

    International Nuclear Information System (INIS)

    Xu Xingsheng; Yokoyama, Shiyoshi

    2011-01-01

    Two-photon excited fluorescence (TPEF) under continuous-wave excitation from silicon particles produced by a pulsed laser is investigated. Spectra and images of TPEF from silicon particles are studied under different excitation intensities and operation modes (continuous wave or pulse). It is found that the photoluminescence depends superlinearly on the excitation intensity and that the spectral shape and peaks vary with different silicon particles. The above phenomena show the nonlinear behavior of TPEF from silicon particles, and stimulated emission is a possible process.

  4. Understanding ligand-centred photoluminescence through flexibility and bonding of anthraquinone inorganic-organic frameworks

    Energy Technology Data Exchange (ETDEWEB)

    Furman, Joshua D; Burwood, Ryan P; Tang, Min; Mikhailovsky, Alexander A; Cheetham, Anthony K [Cambridge; (UCSB)

    2011-11-17

    Five novel inorganic-organic framework compounds containing the organic chromophore ligand anthraquinone-2,3-dicarboxylic acid (abbreviated H2AQDC) and calcium (CaAQDC), zinc (ZnAQDC), cadmium (CdAQDC), manganese (MnAQDC), and nickel (NiAQDC), respectively, have been synthesized. The photoluminescence of these materials is only visible at low temperatures and this behaviour has been evaluated in terms of ligand rigidity. It is proposed that the 2,3 position bonding sites result in luminescence-quenching ligand motion, as supported by X-ray diffraction and temperature-dependent luminescence studies.

  5. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  6. Room-temperature synthesis and photoluminescence of hexagonal CePO4 nanorods

    Science.gov (United States)

    Zhu, J.; Zhang, K.; Zhao, H. Y.

    2018-01-01

    Hexagonal CePO4 nanorods were synthesized via a simple chemical precipitation route at room-temperature without the presence of surfactants and then characterized by powder X-ray diffraction (XRD), energy-dispersive X-ray (EDX) spectrometry, scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) absorption and photoluminescence (PL) spectroscopy. Hexagonal CePO4 nanorods exhibit strong ultraviolet absorption and ultraviolet luminescence, which correspond to the electronic transitions between 4f and 5d state of Ce3+ ions.

  7. Photoluminescence study in solid solutions of CdMgMnTe semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Kusraev, Yu.G.; Averkieva, G.K.

    1993-01-01

    Luminescence and resonant Raman scattering in quaternary solid solutions of CdMgMnTe semimagnetic semiconductors are investigated. It is shown that the intensity and position of the luminescence band, conditioned by the 4 T 1 --> 6 A 1 optical transitions in the Mn d-shell, depend on the local crystal environment. Temperature variations of the photoluminescence spectra are interpreted on the base of a model of electron excitation energy transport from Mn 2+ to different recombination centers. In the resonant Raman scattering spectrum were observed three longitudinal vibrational modes with energies near to phonon energies of corresponding binary compounds

  8. Degradation of the photoluminescence of porous silicon caused by 60Co γ radiation

    International Nuclear Information System (INIS)

    Astrova, E.V.; Emtsev, V.V.; Lebedev, A.A.

    1995-01-01

    Two series of experiments were carried out. In the first, as-grown porous silicon was bombarded with 60 Co γ radiation to a dose ∼ 10 20 cm -2 . The photoluminescence intensity fell off by a factor ∼ 50 as a result, although the peak of the band underwent essentially no shift. In the second series, single-crystal silicon was bombarded to the same dose, and then porous silicon was fabricated on it. The intensity and spectra of these samples were the same as usual. Possible degradation mechanisms are discussed. 12 refs., 2 figs

  9. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

    KAUST Repository

    Matsuki, Keiichiro

    2016-05-24

    We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

  10. Photoluminescence dynamics of weakly confined excitons in GaAs thin films

    International Nuclear Information System (INIS)

    Kanno, Atsushi; Katouf, Redouane; Kojima, Osamu; Ishi-Hayase, Junko; Sasaki, Masahide; Tsuchiya, Masahiro; Isu, Toshiro

    2008-01-01

    We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons

  11. Tunable photoluminescent metal-organic-frameworks and method of making the same

    Energy Technology Data Exchange (ETDEWEB)

    Nenoff, Tina M.; Sava Gallis, Dorina Florentina; Rohwer, Lauren E.S.

    2017-08-22

    The present disclosure is directed to new photoluminescent metal-organic frameworks (MOFs). The newly developed MOFs include either non rare earth element (REE) transition metal atoms or limited concentrations of REE atoms, including: Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Ru, Ag, Cd, Sn, Sb, Ir, Pb, Bi, that are located in the MOF framework in site isolated locations, and have emission colors ranging from white to red, depending on the metal concentration levels and/or choice of ligand.

  12. Synthesis, crystal structure, and photoluminescence of a lithium isothiocyanate compound with 18-crown-6

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Shan; Fu, Bo; Zhao, Zhen; Liu, Xi [Chongqing Normal Univ. (China). Chongqing Key Lab. of Inorganic Functional Materials

    2018-04-01

    The investigation of the supramolecular interactions between the lithium isothiocyanate salt and 18-crown-6 (18C-6) in commercial tetrahydrofuran leads to the formation of a lithium compound, LiNCS(H{sub 2}O)(18C-6) (1). In the crystal structure the asymmetric unit contains two similar LiNCS(H{sub 2}O)(18C-6) molecules. Solid-state photoluminescence experiments have shown that compound 1 emits violet luminescence, and its possible emission mechanism was investigated in detail based on theoretical calculations.

  13. Gold nanoparticles: BSA (Bovine Serum Albumin) coating and X-ray irradiation produce variable-spectrum photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kuo-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Lai, Sheng-Feng [Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Department of Engineering Science, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Yan-Cheng; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Ong, Edwin B.L. [Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Tan, Hui-Ru [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Tok, Eng Soon [Physics Department, National University of Singapore, 117542 (Singapore); Yang, C.S. [Center for Nanomedicine, National Health Research Institutes, Miaoli 350, Taiwan (China); Margaritondo, G. [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Hwu, Y., E-mail: phhwu@sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China)

    2015-01-15

    We show that by using different x-ray irradiation times of BSA-coated Au nanoparticles (NPs) we can change their ultraviolet-stimulated photoluminescence and shift the spectral weight over the visible spectral range. This is due to the interplay of two emission bands, one due to BSA and the other related to gold. The emission properties did not change with time over a period of several months. - Highlights: • Gold nanoparticles (Au NPs) coated with Bovine Serum Albumin (BSA) are synthesized by x-ray irradiation. • BSA coated AuNPs with ∼1 nm size show strong photoluminescence in red by UV excitation. • The blue photoluminescence of BSA increase with x-ray irradiation. • Increase x-ray irradiation time during the synthesis shift the color of the colloid from red to blue.

  14. Gold nanoparticles: BSA (Bovine Serum Albumin) coating and X-ray irradiation produce variable-spectrum photoluminescence

    International Nuclear Information System (INIS)

    Lee, Kuo-Hao; Lai, Sheng-Feng; Lin, Yan-Cheng; Chou, Wu-Ching; Ong, Edwin B.L.; Tan, Hui-Ru; Tok, Eng Soon; Yang, C.S.; Margaritondo, G.; Hwu, Y.

    2015-01-01

    We show that by using different x-ray irradiation times of BSA-coated Au nanoparticles (NPs) we can change their ultraviolet-stimulated photoluminescence and shift the spectral weight over the visible spectral range. This is due to the interplay of two emission bands, one due to BSA and the other related to gold. The emission properties did not change with time over a period of several months. - Highlights: • Gold nanoparticles (Au NPs) coated with Bovine Serum Albumin (BSA) are synthesized by x-ray irradiation. • BSA coated AuNPs with ∼1 nm size show strong photoluminescence in red by UV excitation. • The blue photoluminescence of BSA increase with x-ray irradiation. • Increase x-ray irradiation time during the synthesis shift the color of the colloid from red to blue

  15. Functionalization of graphene oxide nanostructures improves photoluminescence and facilitates their use as optical probes in preclinical imaging

    Science.gov (United States)

    Prabhakar, Neeraj; Näreoja, Tuomas; von Haartman, Eva; Şen Karaman, Didem; Burikov, Sergey A.; Dolenko, Tatiana A.; Deguchi, Takahiro; Mamaeva, Veronika; Hänninen, Pekka E.; Vlasov, Igor I.; Shenderova, Olga A.; Rosenholm, Jessica M.

    2015-06-01

    Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are attractive for biomedical imaging such as low toxicity and stable photoluminescence. In this study, the nGOs were organically surface-modified with poly(ethylene glycol)-poly(ethylene imine) (PEG-PEI) copolymers tagged with folic acid as the affinity ligand for cancer cells expressing folate receptors. The functionalization enhanced both the cellular uptake and quantum efficiency of the photoluminescence as compared to non-modified nGOs. The nGOs exhibited an excitation dependent photoluminescence that facilitated their detection with a wide range of microscope configurations. The functionalized nGOs were non-toxic, they were retained in the stained cell population over a period of 8 days and they were distributed equally between daughter cells. We have evaluated their applicability in in vitro and in vivo (chicken embryo CAM) models to visualize and track migratory cancer cells. The good biocompatibility and easy detection of the functionalized nGOs suggest that they could address the limitations faced with quantum dots and organic fluorophores in long-term in vivo biomedical imaging.Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are

  16. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  17. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    International Nuclear Information System (INIS)

    Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

    2016-01-01

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  18. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  19. Characteristics and performance of the Sunna high dose dosemeter using green photoluminescence and UV absorption readout methods

    Energy Technology Data Exchange (ETDEWEB)

    Miller, S.D.; Murphy, M.K.; Tinker, M.R.; Kovacs, A.; McLaughlin, W

    2002-07-01

    Growth in the use of ionising radiation for medical sterilisation and the potential for wide-scale international food irradiation have created the need for robust, mass-producible, inexpensive, and highly accurate radiation dosemeters. The Sunna dosemeter, lithium fluoride injection-moulded in a polyethylene matrix, can be read out using either green photoluminescence or ultraviolet (UV) absorption. The Sunna dosemeter can be mass-produced inexpensively with high precision. Both the photoluminescent and the UV absorption reader are simple and inexpensive. Both methods of analysis display negligible humidity effects, minimal dose rate dependence, acceptable post-irradiation effects, and permit measurements with a precision of nearly 1% 1s. The UV method shows negligible irradiation temperature effects from -30 deg. C to +60 deg. C. The photoluminescence method shows negligible irradiation temperature effects above room temperature for sterilisation dose levels and above. The dosimetry characteristics of these two readout methods are presented along with performance data in commercial sterilisation facilities. (author)

  20. Photoluminescence of ultra-high molecular weight polyethylene modified by fast atom bombardment

    International Nuclear Information System (INIS)

    Toth, S.; Fuele, M.; Veres, M.; Pocsik, I.; Koos, M.; Toth, A.; Ujvari, T.; Bertoti, I.

    2006-01-01

    An increase in the application potential of the ultra-high molecular weight polyethylene (UHMWPE) may be achieved by producing a hard, wear resistant carbonaceous modified surface layer on it. In this study the surface of UHMWPE samples was treated by 1 keV N, H and He fast atom bombardment (FAB) to obtain amorphous carbon surface layer which produces an enhancement of microhardness. The untreated and FAB-modified samples were investigated by photoluminescence, infrared, Raman and optical absorption spectroscopy. The FAB-treatment caused a nearly complete disappearance of the characteristic luminescence bands of UHMWPE (at 335, 351, 363 and 381 nm), the appearance of new bands at 459 and 495 nm due to the formation of new recombination levels in the FAB-treated samples. The remarkable decrease in integrated luminescence intensity indicates the appearance of new non-radiative recombination levels caused by FAB treatment. Structural modifications in FAB treated samples result in the development of structural arrangement containing sp 2 bonded carbon sites in rings or chains of different sizes and the electronic levels corresponding to these structural elements are situated in the forbidden gap in the electronic density of states which brings forth the observed changes of the photoluminescence properties

  1. Photoluminescence emission at room temperature in zinc oxide nano-columns

    International Nuclear Information System (INIS)

    Rocha, L.S.R.; Deus, R.C.; Foschini, C.R.; Moura, F.; Garcia, F. Gonzalez; Simões, A.Z.

    2014-01-01

    Highlights: • ZnO nanoparticles were obtained by microwave-hydrothermal method. • X-ray diffraction reveals a hexagonal structure. • Photoluminescence emission evidenced two absorption peaks, at around 480 nm and 590 nm wavelengths. - Abstract: Hydrothermal microwave method (HTMW) was used to synthesize crystalline zinc oxide (ZnO) nano-columns at the temperature of 120 °C with a soaking time of 8 min. ZnO nano-columns were characterized by using X-ray analyses (XRD), infrared spectroscopy (FT-IR), thermogravimetric analyses (TG-DTA), field emission gun and transmission electron microscopy (FEG-SEM and TEM) and photoluminescence properties (PL). XRD results indicated that the ZnO nano-columns are free of any impurity phase and crystallize in the hexagonal structure. Typical FT-IR spectra for ZnO nano-columns presented well defined bands, indicating a substantial short-range order in the system. PL spectra consist of a broad band at 590 nm and narrow band at 480 nm corresponding to a near-band edge emission related to the recombination of excitons and level emission related to structural defects. These results show that the HTMW synthesis route is rapid, cost effective, and could be used as an alternative to obtain ZnO nano-columns in the temperature of 120 °C for 8 min

  2. Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

    Science.gov (United States)

    Sun, Q. M.; Melnikov, A.; Mandelis, A.

    2015-06-01

    Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

  3. Probing defects in chemically synthesized ZnO nanostrucures by positron annihilation and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Chaudhuri, S. K.; Das, D.; Ghosh, Manoranjan; Raychaudhuri, A. K.

    2010-01-01

    The present article describes the size induced changes in the structural arrangement of intrinsic defects present in chemically synthesized ZnO nanoparticles of various sizes. Routine x-ray diffraction and transmission electron microscopy have been performed to determine the shapes and sizes of the nanocrystalline ZnO samples. Detailed studies using positron annihilation spectroscopy reveals the presence of zinc vacancy. Whereas analysis of photoluminescence results predict the signature of charged oxygen vacancies. The size induced changes in positron parameters as well as the photoluminescence properties, has shown contrasting or nonmonotonous trends as size varies from 4 to 85 nm. Small spherical particles below a critical size (∼23 nm) receive more positive surface charge due to the higher occupancy of the doubly charge oxygen vacancy as compared to the bigger nanostructures where singly charged oxygen vacancy predominates. This electronic alteration has been seen to trigger yet another interesting phenomenon, described as positron confinement inside nanoparticles. Finally, based on all the results, a model of the structural arrangement of the intrinsic defects in the present samples has been reconciled.

  4. Investigation on photoluminescence, electrical and positron lifetime of Eu"3"+ activated Gd_2O_3 phosphors

    International Nuclear Information System (INIS)

    Selvalakshmi, Thangaraj; Sellaiyan, Selvakumar; Uedono, Akira; Chandra Bose, Arumugam

    2015-01-01

    In the present study, red emitting Gd_2O_3:Eu"3"+ phosphors are prepared by citrate-based sol–gel process and the as-prepared samples are annealed at various annealing temperatures. The photoluminescence properties of Gd_2O_3:Eu"3"+ is explained from the excitation and emission spectra. The excitation spectra include peaks corresponding to charge transfer and 4f–4f transitions of Eu"3"+ and Gd"3"+. The phosphors exhibit a weak energy transfer process from Gd"3"+ to Eu"3"+. Under the excitation of 254 nm, a sharp red emission peak is observed at 611 nm and the emission intensity increases with the annealing temperature. The presence of defects in the phosphor is investigated by positron annihilation lifetime and Doppler broadening spectroscopy. The relation between visible emission and lattice defects of the phosphors is presented. The electrical and dielectric properties of the phosphor are also discussed in detail. Such red emitting phosphors pave the way towards the fabrication of light emitting diodes (LEDs). - Highlights: • Positron annihilation lifetime spectroscopy of Gd_2O_3:Eu"3"+. • Relation between positron lifetime and photoluminescence. • Conductivity and dielectric properties of Gd_2O_3:Eu"3"+.

  5. Investigation of the photoluminescence properties of thermochemically synthesized CdS nanocrystals

    Directory of Open Access Journals (Sweden)

    M. Molaei

    2011-03-01

    Full Text Available In this work we have synthesized CdS nanocrystals with thermochemical method. CdSO4 and Na2S2O3 were used as the precursors and thioglycolic acid (TGA was used as capping agent molecule. The structure and optical property of the nanocrystals were characterized by means of XRD, TEM, UV-visible optical spectroscopy and photoluminescence (PL. X-ray diffraction (XRD and TEM analyses demonstrated hexagonal phase CdS nanocrystals with an average size around 2 nm. Synthesized nanocrystals exhibited band gap of about 3.2 eV and showed a broad band emission from 400-750 nm centered at 504 nm with a (0.27, 0.39 CIE coordinate. This emission can be attributed to recombination of an electron in conduction band with a hole trapped in Cd vacancies near to the valance band of CdS. The best attained photoluminescence quantum yield of the nanocrystals was about 12%, this amount is about 20 times higher than that for thioglycerol (TG capped CdS nanocrystals.

  6. Highly stabilized and photoluminescence enhancement of ZnS:Mn2+ nanoparticles in biotin matrix

    International Nuclear Information System (INIS)

    Keshari, Ashish K.; Pandey, Avinash C.

    2009-01-01

    We synthesized the ZnS:Mn 2+ nanoparticles passivated by biocompatible layer, namely, biotin by chemical precipitation route and studied their temporal evolution for size, structure, optical, and photoluminescence stability. To monitor the structural and optoelectronic properties of the nanoparticles with time, we have characterized the grown product by x-ray diffraction, small angle x-ray scattering, UV visible, and photoluminescence spectroscopic techniques at a regular interval for a period of three months. Results showed that the properties of nanophosphors capped with biotin are remaining the same even after 3 months. Energy dispersive x-ray analysis of 3 month aged sample shows long time compatibility between ZnS:Mn 2+ nanoparticles and the biotin. This is also confirmed by electron microscopy that the growth of the nanoparticles is strongly arrested by the biotin. X-ray photoelectron spectra were also recorded to show the chemical state of the elements. Enhanced ratio of Zn 2p to Mn 2p peaks in the x-ray photoelectron spectra of ZnS:Mn 2+ nanoparticles shows that the Mn 2+ ions are incorporated within ZnS host matrix. We found that biotin capping will enhance the luminescence from ZnS:Mn 2+ nanoparticles as compared to without capped particles. Absence of biotin will gradually degrade the luminescence upon aging while drastic degradation in luminescence intensity was observed after annealing. Properties show that biotin also protected the nanoparticles from any environmental attack

  7. Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Dung, Nguyen Duc [Advanced Institute of Science and Technology, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam)

    2016-11-15

    We report the characteristic photoluminescence (PL) spectra of erbium ion (Er{sup 3+})-doped tin dioxide (SnO{sub 2})nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er{sup 3+} ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO{sub 2} and its average particle diameter of approximately 5 nm did not change with Er{sup 3+} ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er{sup 3+} ions. The PL excitation spectra referred to an efficient energy transfer to Er{sup 3+} ions in the presence of SnO{sub 2}nanoparticles. The most intense Er-related emission of SnO{sub 2}:Er{sup 3+} nanoparticles in near infrared region was found in samples containing an Er{sup 3+} ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO{sub 2} nanoparticles.

  8. Quenching of photoluminescence of colloidal ZnO nanocrystals by nitronyl nitroxide radicals

    Energy Technology Data Exchange (ETDEWEB)

    Stroyuk, Oleksandr L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky avenue, 03028 Kyiv (Ukraine); Yakovenko, Anastasiya V.; Raevskaya, Oleksandra E. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky avenue, 03028 Kyiv (Ukraine); Plyusnin, Victor F. [Institute of Chemical Kinetics and Combustion of Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2014-11-15

    Quenching of the photoluminescence of colloidal zinc oxide nanocrystals by a series of stable nitronyl nitroxide radicals was studied by means of stationary and time-resolved luminescence spectroscopy. Among the studied radicals the most efficient quenchers of the ZnO luminescence are the carboxyl-substituted species. The meta-substituted radical was found to be a more active quencher, than para-substituted one due to a closer proximity of the radical center to the nanocrystals surface. The PL quenching has a complex dynamic/static character. The dynamic quenching arises from photocatalytic radical reduction by ZnO conduction band electrons, while the static quenching is caused by adsorption of the photoreduction products on the nanocrystal surface. The non-substituted and OH-substituted radicals are inferior to the products of their photoreduction in capability of adsorption of the ZnO surface, and the quenching is dominated by interactions between the nanocrystals and photoreduced hydroxylamines. In case of COOH-substituted radicals, however, the radicals compete with the photoreduction products for the surface sites of ZnO nanocrystals resulting in a dynamic character of photoluminescence quenching.

  9. Shape controlled synthesis of CaMoO4 thin films and their photoluminescence property

    International Nuclear Information System (INIS)

    Marques, Ana Paula de Azevedo; Longo, Valeria M.; Melo, Dulce M.A. de; Pizani, Paulo S.; Leite, Edson R.; Varela, Jose Arana; Longo, Elson

    2008-01-01

    CaMoO 4 (CMO) disordered and ordered thin films were prepared by the complex polymerization method (CPM). The films were annealed at different temperatures and time in a conventional resistive furnace (RF) and in a microwave (MW) oven. The microstructure and surface morphology of the structure were monitored by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (HRSEM). Order and disorder were characterized by X-ray diffraction (XRD) and optical reflectance. A strong photoluminescence (PL) emission was observed in the disordered thin films and was attributed to complex cluster vacancies. The experimental results were compared with density functional and Hartree-Fock calculations. - Graphical abstract: CaMoO 4 thin films were prepared by the complex polymerization method (CPM). The films were annealed at different temperatures and time in a conventional resistive furnace and in a microwave oven. A strong photoluminescence emission was observed in the disordered thin films and was attributed to complex cluster vacancies. The experimental results were confirmed by high level first principle calculations

  10. Facile synthesis of S, N co-doped carbon dots and investigation of their photoluminescence properties.

    Science.gov (United States)

    Zhang, Yue; He, Junhui

    2015-08-21

    A facile one-pot approach to prepare photoluminescent carbon dots (CDs) was developed through hydrothermal treatment of cysteine and citric acid. The obtained CDs show stable and bright blue emission with a quantum yield of 54% and an average lifetime of 11.61 ns. Moreover, the two-photon induced upconversion fluorescence of the CDs was observed and demonstrated. Interestingly, both down and up conversion fluorescence of the CDs show excitation-independent emission, which is quite different from most of the previously reported CDs. Ultrafast spectroscopy was also employed here to study the photoluminescence (PL) properties of the CDs. After characterization using various spectroscopic techniques, a unique PL mechanism for the as-prepared CDs' fluorescence was proposed accordingly. In addition, the influence of various metal ions on the CD fluorescence was examined and no quenching phenomena were observed. Meanwhile, gold nanoparticles (Au NPs) were found to be good quenchers of CD fluorescence and their quenching behavior was fitted to the Stern-Volmer equation. This provides new opportunities for fluorescence sensor designs and light energy conversion applications. Finally, the as-prepared CDs were inkjet-printed to form a desirable pattern, which is useful for fluorescent patterns, and anti-counterfeiting labeling.

  11. Vacuum ultraviolet excited photoluminescence properties of Gd2O2CO3:Eu3+ phosphor

    Institute of Scientific and Technical Information of China (English)

    WANG Zhilong; WANG Yuhua; ZHANG Jiachi

    2008-01-01

    The Gd2O2CO3:Eu3+ with type-II structure phosphor was successfully synthesized via flux method at 400℃ and their photoluminescence properties in vacuum ultraviolet (VUV) region were examined. The broad and strong excitation bands in the range of 153-205 nm owing to the CO32- host absorption and charge transfer (CT) of Gd3+-O2- were observed for Gd2O2CO3:Eu3+. Under 172 nm excitation, Gd2O2CO3:Eu3+ exhibited strong red emission with good color purity, indicating Eu3+ ions located at low symmetry sites and the chromaticity coordination of luminescence for Gd2O2CO3:Eu3+ was (x=0.652, y=0.345). The photoluminescence quenching concentration of Eu3+ excited by 172 nm for Gd2O2CO3:Eu3+ was about 5%. Gd2O2CO3:Eu3+ would be a potential VUV-excited red phosphor applied in mercury-free fluorescent lamps.

  12. Photoluminescence and thermoluminescence properties of BaGa2O4

    Science.gov (United States)

    Noto, L. L.; Poelman, D.; Orante-Barrón, V. R.; Swart, H. C.; Mathevula, L. E.; Nyenge, R.; Chithambo, M.; Mothudi, B. M.; Dhlamini, M. S.

    2018-04-01

    Rare-Earth free luminescent materials are fast becoming important as the cost of rare earth ions gradually increases. In this work, a Rare-Earth free BaGa2O4 luminescent compound was prepared by solid state chemical reaction, which was confirmed to have a single phase by X-ray Diffraction. The Backscattered Electron image and Energy Dispersive X-ray spectroscopy maps confirmed irregular particle and homogeneous compound formation, respectively. The Photoluminescence spectrum displayed broad emission between 350 to 650 nm, which was deconvoluted into two components. The photoluminescence excitation peak was positioned at 254 nm, which corresponds with the band-to-band position observed from the diffuse reflectance spectrum. The band gap was extrapolated to 4.65 ± 0.02 eV using the Kubelka-Munk model. The preliminary thermoluminescence results indicated that the kinetics involved were neither of first nor second order. Additionally, the activation energy of the electrons within the trap centres was approximated to 0.61 ± 0.01 eV using the Initial Rise model.

  13. Mn-doped ZnO nanocrystals synthesized by sonochemical method: Structural, photoluminescence, and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A.A., E-mail: aaelho@yahoo.com [Assiut University, Faculty of Science, Department of Physics, Assiut 71516 (Egypt); Osman, M.A. [Assiut University, Faculty of Science, Department of Physics, Assiut 71516 (Egypt); Ibrahim, E.M.M. [Sohag University, Faculty of Science, Department of Physics, Sohag 82524 (Egypt); Ali, Manar A.; Abd-Elrahim, A.G. [Assiut University, Faculty of Science, Department of Physics, Assiut 71516 (Egypt)

    2017-05-15

    Highlights: • Mn-doped ZnO nanostructures were synthesized by the sonochemical method. • Structural, morphological, optical, photoluminescence and magnetic properties were investigated. • Mn-doped ZnO nanostructures reveal a blue shift of the optical band gap. • Photoluminescence spectra of Mn-doped ZnO nanostructures show quenching in the emission intensity. • Mn-doped ZnO nanostructures exhibit ferromagnetic ordering at room temperature. - Abstract: This work reports the synthesis of Mn-doped ZnO nanostructures using ice-bath assisted sonochemical technique. The impact of Mn-doping on structural, morphological, optical, and magnetic properties of ZnO nanostructures is studied. The morphological study shows that the lower doped samples possess mixtures of nanosheets and nanorods while the increase in Mn content leads to improvement of an anisotropic growth in a preferable orientation to form well-defined edge rods at Mn content of 0.04. UV–vis absorption spectra show that the exciton peak in the UV region is blue shifted due to Mn incorporation into the ZnO lattice. Doping ZnO with Mn ions leads to a reduction in the PL intensity due to a creation of more non-radiative recombination centers. The magnetic measurements show that the Mn-doped ZnO nanostructures exhibit ferromagnetic ordering at room temperature, as well as variation of the Mn content can significantly affect the ferromagnetic behavior of the samples.

  14. ZnO twin-cones: synthesis, photoluminescence, and catalytic decomposition of ammonium perchlorate.

    Science.gov (United States)

    Sun, Xuefei; Qiu, Xiaoqing; Li, Liping; Li, Guangshe

    2008-05-19

    ZnO twin-cones, a new member to the ZnO family, were prepared directly by a solvothermal method using a mixed solution of zinc nitrate and ethanol. The reaction and growth mechanisms of ZnO twin-cones were investigated by X-ray diffraction, UV-visible spectra, infrared and ion trap mass spectra, and transmission electron microscopy. All as-prepared ZnO cones consisted of tiny single crystals with lengths of several micrometers. With prolonging of the reaction time from 1.5 h to 7 days, the twin-cone shape did not change at all, while the lattice parameters increased slightly and the emission peak of photoluminescence shifted from the green region to the near orange region. ZnO twin-cones are also explored as an additive to promote the thermal decomposition of ammonium perchlorate. The variations of photoluminescence spectra and catalytic roles in ammonium perchlorate decomposition were discussed in terms of the defect structure of ZnO twin-cones.

  15. Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

    Directory of Open Access Journals (Sweden)

    Martina Gilić

    2017-06-01

    Full Text Available Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K and UV-VIS spectroscopy (T = 300K. Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.

  16. UV photooxidation induced structural and photoluminescence behaviors in vapor-etching based porous silicon

    International Nuclear Information System (INIS)

    Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

    2006-01-01

    In this paper, we investigate the effect of UV irradiation on Vapor-Etching (VE) based Porous Silicon (PS) structure and luminescence under controlled atmosphere (N 2 , air, O 2 ). The oxidation evolution is monitored by Fourier transform infrared (FTIR) spectroscopy. FTIR measurements show that the SiH x bond, initially present in the freshly prepared PS layers, decreased progressively with UV irradiation time until they completely disappear. We found that this treatment accelerates the oxidation process. SiO x structures appear and gradually become dominant as regard to the SiH x species, while UV irradiation is in progress. Generally, the photoluminescence (PL) intensity of the PS layer decreases instantaneously at the starting by the UV excitation and stabilizes after a period depending on the ambient gas and the specific surface area of the porous structure. Further UV exposure leads to a linear decrease of the PL intensity due to change of surface passivation from SiH x to O y SiH x . After less than 100 min of UV irradiation, the PL intensity exhibits an exponential decay. UV exposure in air and O 2 leads approximately to the same PL behavior, although faster PL intensity decrease was observed under O 2 -rich ambient. This was explained as being due to intense hydrogen desorption in presence of oxygen. Correlations of PL results with FTIR measurements show that surface passivation determine the electronic states of silicon nano-crystallites and influence the photoluminescence efficiency

  17. Conductive properties of switchable photoluminescence thermosetting systems based on liquid crystals.

    Science.gov (United States)

    Tercjak, Agnieszka; Gutierrez, Junkal; Ocando, Connie; Mondragon, Iñaki

    2010-03-16

    Conductive properties of different thermosetting materials modified with nematic 4'-(hexyl)-4-biphenyl-carbonitrile (HBC) liquid crystal and rutile TiO(2) nanoparticles were successfully studied by means of tunneling atomic force miscroscopy (TUNA). Taking into account the liquid crystal state of the HBC at room temperature, depending on both the HBC content and the presence of TiO(2) nanoparticles, designed materials showed different TUNA currents passed through the sample. The addition of TiO(2) nanoparticles into the systems multiply the detected current if compared to the thermosetting systems without TiO(2) nanoparticles and simultaneously stabilized the current passed through the sample, making the process reversible since the absolute current values were almost the same applying both negative and positive voltage. Moreover, thermosetting systems modified with liquid crystals with and without TiO(2) nanoparticles are photoluminescence switchable materials as a function of temperature gradient during repeatable heating/cooling cycle. Conductive properties of switchable photoluminescence thermosetting systems based on liquid crystals can allow them to find potential application in the field of photoresponsive devices, with a high contrast ratio between transparent and opaque states.

  18. Structural refinement, photoluminescence and Raman spectroscopy of wurtzite Mn-doped Zn O pellets

    Energy Technology Data Exchange (ETDEWEB)

    Marquina, J.; Martin, J.; Luengo, J.; Vera, F.; Roa, L. [Centro de Estudios Avanzados en Optica, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Gonzalez, J. [Centro de Estudios de Semiconductores, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Rodriguez, F.; Renero L, C.; Valiente, R. [Malta-Consolider Team, CITIMAC, Facultad de Ciencias, Universidad de Cantabria, Santander 69005 (Spain); Delgado, G. E., E-mail: marquinajesus@gmail.com [Laboratorio de Cristalografia, Facultad de Ciencias, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of)

    2017-11-01

    We report the results of the Rietveld refinement, photoluminescence and Raman spectroscopy of Mn-doped Zn O ceramic pellets. Rietveld refinement shows that samples crystallize in the wurtzite structure and for the Mn-doped sample indicated that the Mn atoms substitute the Zn tetrahedral crystallographic sites in the Zn O host lattice. The emission and absorption spectra of Mn-doped Zn O have been investigated in the visible-UV region and the data have been interpreted in terms of the wurtzite Zn O electronic structure. Two broad bands, one due to superposition between donor bound excitons (DX) and free excitons (FX) and other due free-to bond excitonic recombination (FB) dominates the low-temperature photoluminescence spectra of Mn-doped Zn O bulk. In the Raman spectrum, an extra mode at ∼520 cm{sup -1} has been observed in agreement with earlier works, and it is an indicator for the incorporation of Mn{sup +2} ions into the Zn O host matrix since it is not is observed in Zn O pristine. Rietveld refinement of the X-ray diffraction patterns, energy-dispersive X-ray spectroscopy (EDS) technique, and Raman spectroscopies were performed to study these effects. (Author)

  19. Chemically modulated graphene quantum dot for tuning the photoluminescence as novel sensory probe

    Science.gov (United States)

    Hwang, Eunhee; Hwang, Hee Min; Shin, Yonghun; Yoon, Yeoheung; Lee, Hanleem; Yang, Junghee; Bak, Sora; Lee, Hyoyoung

    2016-12-01

    A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providing new HFHPB-GQD material. With a help of the electron withdrawing HFHPB group, the energy band gap of the HFHPB-GQD was widened and its PL decay life time decreased. As designed, after addition of dimethyl methyl phosphonate (DMMP), the PL intensity of HFHPB-GQD sensor sharply increased up to approximately 200% through a hydrogen bond with DMMP. The fast response and short recovery time was proven by quartz crystal microbalance (QCM) analysis. This HFHPB-GQD sensor shows highly sensitive to DMMP in comparison with GQD sensor without HFHPB and graphene. In addition, the HFHPB-GQD sensor showed high selectivity only to the phosphonate functional group among many other analytes and also stable enough for real device applications. Thus, the tuning of the band gap of the photoluminescent GQDs may open up new promising strategies for the molecular detection of target substrates.

  20. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

    International Nuclear Information System (INIS)

    Chen, Min-Hua; Lin, Feng-Huei; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Tanaka, Junzo; Hanagata, Nobutaka

    2014-01-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications. (paper)

  1. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles.

    Science.gov (United States)

    Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

    2014-10-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of 'personalized medicine' with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

  2. Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, H.; Calderon, A. [CICATA-IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico); Gonzalez de la Cruz, G. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2006-07-01

    Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al{sub x}Ga{sub 1-x}N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

  3. Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

    International Nuclear Information System (INIS)

    Herrera, H.; Calderon, A.; Gonzalez de la Cruz, G.

    2006-01-01

    Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al x Ga 1-x N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

  4. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

    Science.gov (United States)

    Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

    2014-10-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca2+ with Fe3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu3+ and Fe3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu3+ and Fe3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu3+ and Fe3+, and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

  5. Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment

    KAUST Repository

    Han, Hau-Vei

    2015-12-30

    Atomically thin two-dimensional transition-metal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-to-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.

  6. Influence of Parameters of Screen Printing on Photoluminescence Properties of Nanophotonic Labels for Smart Packaging

    Directory of Open Access Journals (Sweden)

    Olha Hrytsenko

    2017-01-01

    Full Text Available Smart packaging is becoming more popular on world market as a new type of packaging able to react to changes in a packaged product during storage and informs a customer about the safety of consumption of packaged food. This article investigates the main technological issues of the use of nanophotonic printing inks based on ZnO/SiO2 nanoparticles and polyvinylpyrrolidone (PVP for printing active elements of smart packaging on paper substrates, concerning material properties and parameters of screen printing. It is determined that the use of ink compositions with medium content of ZnO/SiO2 nanoparticles allows obtaining blue-green and blue shades of luminescence color of screen printed images by changing ink layer thickness on papers with different contents of optical brightness agents (OBAs. The minimum content of ZnO/SiO2 nanoparticles in the developed fluorescent inks leads to blue luminescence colors regardless the contents of OBAs of the papers and ink layer thickness. The luminescence intensity is directly proportional to ink layer thickness and partly depends on the content of OBAs in the selected paper. In order to fabricate nanophotonic elements of smart packaging with predetermined photoluminescence properties, the influence of investigated factors on photoluminescence properties of printed nanophotonic labels should be taken into account.

  7. Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

    2016-07-15

    Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

  8. Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment

    International Nuclear Information System (INIS)

    Kim, Min Su; Nam, Giwoong; Park, Seki; Kim, Hyun; Han, Gang Hee; Lee, Jubok; Dhakal, Krishna P.; Leem, Jae-Young; Lee, Young Hee; Kim, Jeongyong

    2015-01-01

    We performed nanoscale confocal photoluminescence (PL), Raman, and absorption spectral imaging measurements to investigate the optical and structural properties of molybdenum disulfide (MoS 2 ) monolayers synthesized by chemical vapor deposition method and subjected to oxygen plasma treatment for 10 to 120 s under high vacuum (1.3 × 10 −3 Pa). Oxygen plasma treatment induced red shifts of ~ 20 nm in the PL emission peaks corresponding to A and B excitons. Similarly, the peak positions corresponding to A and B excitons of the absorption spectra were red-shifted following oxygen plasma treatment. Based on the confocal PL, absorption, and Raman microscopy results, we suggest that the red-shifting of the A and B exciton peaks originated from shallow defect states generated by oxygen plasma treatment. - Highlights: • Effects of oxygen plasma on optical properties of monolayer MoS 2 were investigated. • Confocal photoluminescence, Raman, and absorption spectral maps are presented. • Wavelength tuning up to ~ 20 nm for the peak emission wavelength was achieved

  9. Photoluminescence wavelength variation of monolayer MoS{sub 2} by oxygen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nam, Giwoong [Department of Nanoscience & Engineering, Inje University, Gimhae 621-749 (Korea, Republic of); Park, Seki; Kim, Hyun [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Han, Gang Hee [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Jubok; Dhakal, Krishna P. [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Leem, Jae-Young [Department of Nanoscience & Engineering, Inje University, Gimhae 621-749 (Korea, Republic of); Lee, Young Hee [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeongyong, E-mail: j.kim@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-09-01

    We performed nanoscale confocal photoluminescence (PL), Raman, and absorption spectral imaging measurements to investigate the optical and structural properties of molybdenum disulfide (MoS{sub 2}) monolayers synthesized by chemical vapor deposition method and subjected to oxygen plasma treatment for 10 to 120 s under high vacuum (1.3 × 10{sup −3} Pa). Oxygen plasma treatment induced red shifts of ~ 20 nm in the PL emission peaks corresponding to A and B excitons. Similarly, the peak positions corresponding to A and B excitons of the absorption spectra were red-shifted following oxygen plasma treatment. Based on the confocal PL, absorption, and Raman microscopy results, we suggest that the red-shifting of the A and B exciton peaks originated from shallow defect states generated by oxygen plasma treatment. - Highlights: • Effects of oxygen plasma on optical properties of monolayer MoS{sub 2} were investigated. • Confocal photoluminescence, Raman, and absorption spectral maps are presented. • Wavelength tuning up to ~ 20 nm for the peak emission wavelength was achieved.

  10. Temperature-dependent photoluminescence study of InP/ZnS quantum dots

    Science.gov (United States)

    Thuy Pham, Thi; Tran, Thi Kim Chi; Liem Nguyen, Quang

    2011-06-01

    This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is normally interpreted as resulting from lattice imperfections in the crystalline structure of InP/ZnS quantum dots (QDs). Peak positions of both the X and I emissions vary similarly with increasing temperature and the same as the InP bandgap narrowing with temperature. In the temperature range from 15 to 80 K, the ratio of the integrated intensity from the X and the I emissions decreases gradually and then this ratio increases fast at temperatures higher than 80 K. This could result from a population of charge carriers in the lattice imperfection states at a temperature below 80 K to increase the I emission but then with these charge carriers being released to contribute to the X emission.

  11. Shine red and yellow photoluminescence in GdAlO3−δ powders

    International Nuclear Information System (INIS)

    Dhahri, Kh.; Bejar, M.; Dhahri, E.; Soares, M.J.; Sousa, M.; Valente, M.A.

    2015-01-01

    Highlights: • GdAlO 3−δ (δ = 0.0, 0.1 and 0.2) powders were synthesized using the conventional solid-state method. • The PL study has revealed the apparition of intense red and yellow photoluminescence (PL) emissions at room temperature. • The red emission was directly related to the singly ionized oxygen vacancy V O · . • The green emission was directly related the doubly ionized oxygen vacancy V O ·· . • The presence of the singly ionized oxygen vacancy was confirmed from the EPR study. - Abstract: GdAlO 3−δ (δ = 0.0, 0.1 and 0.2) compounds were prepared by the conventional solid-state method. XRD patterns revealed that all samples present a major orthorhombic structure. An intense red and a yellow photoluminescence (PL) emissions were observed at room temperature for δ = 0.0 and δ ≠ 0.0 samples, respectively. The red emission was related to the singly ionized oxygen vacancies V O · . The production of doubly ionized oxygen vacancies V O ·· lead to the appearance of a yellow color observed directly from δ = 0.1 and 0.2 samples. The presence of singly and doubly ionized clusters was found to play an important role in the formation of hole–electron pairs and to give rise to the PL emission. The presence of singly ionized oxygen vacancies was confirmed by the EPR study

  12. Defect-mediated photoluminescence up-conversion in cadmium sulfide nanobelts (Conference Presentation)

    Science.gov (United States)

    Morozov, Yurii; Kuno, Masaru K.

    2017-02-01

    The concept of optical cooling of solids has existed for nearly 90 years ever since Pringsheim proposed a way to cool solids through the annihilation of phonons via phonon-assisted photoluminescence (PL) up-conversion. In this process, energy is removed from the solid by the emission of photons with energies larger than those of incident photons. However, actually realizing optical cooling requires exacting parameters from the condensed phase medium such as near unity external quantum efficiencies as well as existence of a low background absorption. Until recently, laser cooling has only been successfully realized in rare earth doped solids. In semiconductors, optical cooling has very recently been demonstrated in cadmium sulfide (CdS) nanobelts as well as in hybrid lead halide perovskites. For the former, large internal quantum efficiencies, sub-wavelength thicknesses, which decrease light trapping, and low background absorption, all make near unity external quantum yields possible. Net cooling by as much as 40 K has therefore been possible with CdS nanobelts. In this study, we describe a detailed investigation of the nature of efficient anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature-dependent PL up-conversion and optical absorption studies on individual NBs together with frequency-dependent up-converted PL intensity spectroscopies suggest that ASPL in CdS nanobelts is defect-mediated through involvement of defect levels below the band gap.

  13. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-01-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  14. Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon

    International Nuclear Information System (INIS)

    Boukherroub, Rabah; Zargarian, Davit; Reber, Christian; Lockwood, David J.; Carty, Arthur J.; Wayner, Danial D.M.

    2003-01-01

    A green photoluminescent triruthenium cluster (I) has been chemisorbed on highly luminescent porous silicon (PSi) layers, either freshly prepared or chemically modified with 1-decene, ethyl undecylenate, or undecylenic acid, in order to study the influence of the cluster on the photoluminescence (PL) arising from the PSi. Immersing the hydrogen-terminated PSi in a hexane solution of (I) for several days at room temperature led to the quenching of PL arising from PSi; the only PL detected was due to the Ru cluster (I). A complete quenching of the PL due to PSi was also observed when derivatized PSi surfaces were exposed to the same solution of (I); in these cases, the PL of (I) also shifted to lower energies. Both the quenching of the PL arising from the PSi layers and the shift in the PL of the cluster (I) are likely due to the difference in the chemical interaction of the PO moiety and the CO groups of the Ru cluster with the terminal functional group of the organic monolayer

  15. Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Boukherroub, Rabah; Zargarian, Davit; Reber, Christian; Lockwood, David J.; Carty, Arthur J.; Wayner, Danial D.M

    2003-07-15

    A green photoluminescent triruthenium cluster (I) has been chemisorbed on highly luminescent porous silicon (PSi) layers, either freshly prepared or chemically modified with 1-decene, ethyl undecylenate, or undecylenic acid, in order to study the influence of the cluster on the photoluminescence (PL) arising from the PSi. Immersing the hydrogen-terminated PSi in a hexane solution of (I) for several days at room temperature led to the quenching of PL arising from PSi; the only PL detected was due to the Ru cluster (I). A complete quenching of the PL due to PSi was also observed when derivatized PSi surfaces were exposed to the same solution of (I); in these cases, the PL of (I) also shifted to lower energies. Both the quenching of the PL arising from the PSi layers and the shift in the PL of the cluster (I) are likely due to the difference in the chemical interaction of the PO moiety and the CO groups of the Ru cluster with the terminal functional group of the organic monolayer.

  16. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Bychto, Leszek, E-mail: leszek.bychto@tu.koszalin.pl; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia, E-mail: eumat@upvnet.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain)

    2008-12-15

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 {Omega}cm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  17. Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon

    Science.gov (United States)

    Boukherroub, Rabah; Zargarian, Davit; Reber, Christian; Lockwood, David J.; Carty, Arthur J.; Wayner, Danial D. M.

    2003-07-01

    A green photoluminescent triruthenium cluster (I) has been chemisorbed on highly luminescent porous silicon (PSi) layers, either freshly prepared or chemically modified with 1-decene, ethyl undecylenate, or undecylenic acid, in order to study the influence of the cluster on the photoluminescence (PL) arising from the PSi. Immersing the hydrogen-terminated PSi in a hexane solution of (I) for several days at room temperature led to the quenching of PL arising from PSi; the only PL detected was due to the Ru cluster (I). A complete quenching of the PL due to PSi was also observed when derivatized PSi surfaces were exposed to the same solution of (I); in these cases, the PL of (I) also shifted to lower energies. Both the quenching of the PL arising from the PSi layers and the shift in the PL of the cluster (I) are likely due to the difference in the chemical interaction of the PO moiety and the CO groups of the Ru cluster with the terminal functional group of the organic monolayer.

  18. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Science.gov (United States)

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-12-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  19. Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shaoyuan [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Ma, Wenhui, E-mail: mwhsilicon@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Zhou, Yang, E-mail: zhouyangnano@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Chen, Xiuhua [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Ma, Mingyu [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Xiao, Yongyin [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Xu, Yaohui [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2014-02-15

    Porous silicon (PS) was prepared by anodizing highly doped p-type silicon in the solution of H{sub 2}O/ethanol/HF. The effects of key fabrication parameters (HF concentration, etching time and current density) on the nanostructure of PS were carefully investigated by AFM, SEM and TEM characterization. According to the experimental results, a more full-fledged model was developed to explain the crack behaviors on PS surface. The photoluminescence (PL) of resulting PS was studied by a fluorescence spectrophotometer and the results show that PL peak positions shift to shorter wavelength with the increasing current density, anodisation time and dilution of electrolyte. The PL spectra blue shift of the sample with higher porosity is confirmed by HRTEM results that the higher porosity results in smaller Si nanocrystals. A linear model (λ{sub PL/nm}=620.3–0.595P, R=0.905) was established to describe the correlation between PL peak positions and porosity of PS. -- Highlights: • The effect of fabrication parameter on the nanostructure of PS is investigated. • The influence of nanostructure on the photoluminescence behaviors is studied • A full-fledged model for expounding the crack behaviors of PS is presented. • The correlation between the porosity and PL peak blue shift is described by a linear model.

  20. Porous silicon photoluminescence modification by colloidal gold nanoparticles: Plasmonic, surface and porosity roles

    International Nuclear Information System (INIS)

    Mora, M.B. de la; Bornacelli, J.; Nava, R.; Zanella, R.; Reyes-Esqueda, J.A.

    2014-01-01

    Metal nanoparticles on semiconductors are of interest because of the tunable effect of the surface plasmon resonance on the physical properties of the semiconductor. In this work, colloidal gold nanoparticles obtained by two different methods, with an average size of 6.1±2.0 nm and 5.0±2.0 nm, were added to luminescent porous silicon by drop casting. The gold nanoparticles interact with porous silicon by modifying its optical properties such as photoluminescence. That being said, plasmon effects are not the only to be taken into account; as shown in this work, surface chemical modification and porosity also play a key role in the final performance of photoluminescence of a porous silicon–gold nanoparticle hybrid system. -- Highlights: • A hybrid material consisting of porous silicon and gold nanoparticles was fabricated. • Porous silicon/gold nanoparticle hybrid material was made by drop casting. • Influence of plasmonics, surface chemical modification and porosity on the optical behavior of our material was analyzed. • Porosity is proposed as a parameter control to obtain the best effects on luminescence of the hybrid plasmonic material

  1. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2016-04-11

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  2. Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

    Science.gov (United States)

    Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

    2015-05-01

    Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

  3. Probing defects in chemically synthesized ZnO nanostrucures by positron annihilation and photoluminescence spectroscopy

    Science.gov (United States)

    Chaudhuri, S. K.; Ghosh, Manoranjan; Das, D.; Raychaudhuri, A. K.

    2010-09-01

    The present article describes the size induced changes in the structural arrangement of intrinsic defects present in chemically synthesized ZnO nanoparticles of various sizes. Routine x-ray diffraction and transmission electron microscopy have been performed to determine the shapes and sizes of the nanocrystalline ZnO samples. Detailed studies using positron annihilation spectroscopy reveals the presence of zinc vacancy. Whereas analysis of photoluminescence results predict the signature of charged oxygen vacancies. The size induced changes in positron parameters as well as the photoluminescence properties, has shown contrasting or nonmonotonous trends as size varies from 4 to 85 nm. Small spherical particles below a critical size (˜23 nm) receive more positive surface charge due to the higher occupancy of the doubly charge oxygen vacancy as compared to the bigger nanostructures where singly charged oxygen vacancy predominates. This electronic alteration has been seen to trigger yet another interesting phenomenon, described as positron confinement inside nanoparticles. Finally, based on all the results, a model of the structural arrangement of the intrinsic defects in the present samples has been reconciled.

  4. Defect induced tuning of photoluminescence property in graphitic carbon nitride nanosheets through synthesis conditions

    Energy Technology Data Exchange (ETDEWEB)

    Das, D. [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032 (India); Banerjee, D., E-mail: nilju82@gmail.com [School of Materials Science Engineering Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Pahari, D. [School of Materials Science Engineering Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Ghorai, U.K. [Department of Industrial Chemistry & Swami Vivekananda Research centre, Ramakrishna Mission Vidyamandira, Belur Math, Howrah 711202 (India); Sarkar, S.; Das, N.S. [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032 (India); Thin Film and Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2017-05-15

    Synthesis of layered sheet like graphitic carbon nitride by pyrolysis of urea at different temperatures has been reported. The proper phase formation has been confirmed by X-ray diffraction study whereas field emission scanning and transmission electron microscope characterized the morphology of the material. Fourier transform infrared and Raman spectroscopy revealed the presence of different bonds in the sample. Thermal gravimetric analysis has been used to study the thermal stability of the material. Energy dispersive X-ray analysis further revealed the elemental composition of carbon and nitrogen in a proper stoichiometric ratio. Excitation dependent photoluminescence spectra of the as prepared samples have been studied in detail. It has been shown that synthesis condition can tailor the amount of defects present in the synthesized samples that in turn can change the photoluminescence properties of the material. The fluorescence spectra of the as prepared samples have been used to detect copper ions present in the sample. It has also been shown that the presence of defects which is mainly N-H functional groups can change the decay characteristics of the carrier in these samples which in turn changes the PL spectra.

  5. Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

    International Nuclear Information System (INIS)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P.; Wei, Min

    2014-01-01

    This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

    Energy Technology Data Exchange (ETDEWEB)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P. [Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, CA (United States); Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); NASA Ames Research Center, Moffett Field, CA (United States); Wei, Min [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu (China)

    2014-07-15

    This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  8. Mesoporous stilbene-based lanthanide metal organic frameworks: synthesis, photoluminescence and radioluminescence characteristics.

    Science.gov (United States)

    Mathis Ii, Stephan R; Golafale, Saki T; Bacsa, John; Steiner, Alexander; Ingram, Conrad W; Doty, F Patrick; Auden, Elizabeth; Hattar, Khalid

    2017-01-03

    Ultra large pore isostructural metal organic frameworks (MOFs) which exhibit both photoluminescence and scintillation properties, were synthesized from trans-4,4'-stilbenedicarboxylic acid (H 2 L) and trivalent lanthanide (Ln) metal salts under solvothermal conditions (Ln = Er 3+ (1) and Tm 3+ (2)). This new class of mesoporous materials is a non-interpenetrating network that features ultra-large diamond shaped pores of dimensions with approximate cross-sectional dimensions of 28 Å × 12 Å. The fully deprotonated ligand, L, is isolated and rigidified as it serves as the organic linker component of the MOF structure. Its low density unit cells possess asymmetric units with two crystallographically independent Ln 3+ ions in seven coordinate arrangements. A distinct feature of the structure is the bis-bidentate carboxylate groups. They serve as a ligand that coordinates two Ln(iii) ions while each L connects four Ln(iii) ions yielding an exceptionally large diamond-shaped rectangular network. The structure exhibits ligand-based photoluminescence with increased lifetime compared to free stilbene molecules on exposure to UV radiation, and also exhibits strong scintillation characteristics, comprising of both prompt and delayed radioluminescence features, on exposure to ionizing radiation.

  9. Photoluminescence emission at room temperature in zinc oxide nano-columns

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, L.S.R.; Deus, R.C. [Universidade Estadual Paulista – Unesp, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil); Foschini, C.R. [Universidade Estadual Paulista – Unesp, Instituto de Química, Laboratório Interdisciplinar em Cerâmica (LIEC), Rua Professor Francisco Degni s/n, CEP 14800-90 Araraquara, SP (Brazil); Moura, F.; Garcia, F. Gonzalez [Universidade Federal de Itajubá – Unifei, Campus Itabira, Rua São Paulo, 377, Bairro Amazonas, CEP 35900-37 Itabira, MG (Brazil); Simões, A.Z., E-mail: alezipo@yahoo.com [Universidade Estadual Paulista – Unesp, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil)

    2014-02-01

    Highlights: • ZnO nanoparticles were obtained by microwave-hydrothermal method. • X-ray diffraction reveals a hexagonal structure. • Photoluminescence emission evidenced two absorption peaks, at around 480 nm and 590 nm wavelengths. - Abstract: Hydrothermal microwave method (HTMW) was used to synthesize crystalline zinc oxide (ZnO) nano-columns at the temperature of 120 °C with a soaking time of 8 min. ZnO nano-columns were characterized by using X-ray analyses (XRD), infrared spectroscopy (FT-IR), thermogravimetric analyses (TG-DTA), field emission gun and transmission electron microscopy (FEG-SEM and TEM) and photoluminescence properties (PL). XRD results indicated that the ZnO nano-columns are free of any impurity phase and crystallize in the hexagonal structure. Typical FT-IR spectra for ZnO nano-columns presented well defined bands, indicating a substantial short-range order in the system. PL spectra consist of a broad band at 590 nm and narrow band at 480 nm corresponding to a near-band edge emission related to the recombination of excitons and level emission related to structural defects. These results show that the HTMW synthesis route is rapid, cost effective, and could be used as an alternative to obtain ZnO nano-columns in the temperature of 120 °C for 8 min.

  10. Photoluminescent BaMoO4 nanopowders prepared by complex polymerization method (CPM)

    International Nuclear Information System (INIS)

    Azevedo Marques, Ana Paula de; Melo, Dulce M.A. de; Paskocimas, Carlos A.; Pizani, Paulo S.; Joya, Miryam R.; Leite, Edson R.; Longo, Elson

    2006-01-01

    The BaMoO 4 nanopowders were prepared by the Complex Polymerization Method (CPM). The structure properties of the BaMoO 4 powders were characterized by FTIR transmittance spectra, X-ray diffraction (XRD), Raman spectra, photoluminescence spectra (PL) and high-resolution scanning electron microscopy (HR-SEM). The XRD, FTIR and Raman data showed that BaMoO 4 at 300 deg. C was disordered. At 400 deg. C and higher temperature, BaMoO 4 crystalline scheelite-type phases could be identified, without the presence of additional phases, according to the XRD, FTIR and Raman data. The calculated average crystallite sizes, calculated by XRD, around 40 nm, showed the tendency to increase with the temperature. The crystallite sizes, obtained by HR-SEM, were around of 40-50 nm. The sample that presented the highest intensity of the red emission band was the one heat treated at 400 deg. C for 2 h, and the sample that displayed the highest intensity of the green emission band was the one heat treated at 700 deg. C for 2 h. The CPM was shown to be a low cost route for the production of BaMoO 4 nanopowders, with the advantages of lower temperature, smaller time and reduced cost. The optical properties observed for BaMoO 4 nanopowders suggested that this material is a highly promising candidate for photoluminescent applications

  11. Photoluminescence properties of white light emitting La2O3:Dy3+ nanocrystals

    Science.gov (United States)

    Reenabati Devi, Konsam; Dorendrajit Singh, Shougaijam; David Singh, Th.

    2018-01-01

    White light emitting nanocrystalline La2O3:Dy3+ phosphors with different concentration (0.5-2 at.%) were synthesized by simple precipitation method. X-ray diffraction (XRD) pattern indicates all the samples crystallizes in the hexagonal phase. Average crystallite sizes of the samples calculated from XRD data were found to be in the range of 20-55 nm. Transmission electron microscopy, selected area electron diffraction, energy dispersive analysis of X-ray and photoluminescence (PL) of the samples are also reported. Strong PL excitation peak due to charge transfer band was observed at 230 nm. Photoluminescence emission peaks observed at 486 and 575 nm were probably attributed to 4F9/2-6H15/2 and 4F9/2-6H13/2 of Dy3+ ions respectively. Optimum luminescence intensity is found at 1 at.% Dy3+ doped La2O3 sample. Further, Commission Internationale de l'é clairage (CIE, 1931) co-ordinates and correlated color temperature (CCT) of the doped sample were calculated to investigate the phosphors' performance and technical applicability of the emitted light respectively. CCT of the 0.5 and 1 at.% samples is 5894 K (white light), within the range of vertical daylight, which makes the synthesised samples promising nanophosphor and may find application in simulating vertical daylight of the Sun.

  12. Photoluminescence in Carborane-Stilbene Triads: A Structural, Spectroscopic, and Computational Study.

    Science.gov (United States)

    Cabrera-González, Justo; Viñas, Clara; Haukka, Matti; Bhattacharyya, Santanu; Gierschner, Johannes; Núñez, Rosario

    2016-09-12

    A set of triads in which o- and m-carborane clusters are bonded to two stilbene units through Ccluster -CH2 bonds was synthesized, and their structures were confirmed by X-ray diffraction. A study on the influence of the o- and m- isomers on the absorption and photoluminescence properties of the stilbene units in solution revealed no charge-transfer contributions in the lowest excited state, as confirmed by (TD)DFT calculations. The presence of one or two B-I groups in m-carborane derivatives does not affect the emission properties of the stilbenes in solution, probably due to the rather large distance between the iodo substituents and the fluorophore. Nevertheless, a significant redshift of the photoluminescence (PL) emission maximum in the solid state (thin films and powder samples) compared to solution was observed; this can be traced back to PL sensitization, most probably due to more densely packed stilbene moieties. Remarkably, the PL absolute quantum yields of powder samples are significantly higher than those in solution, and this was attributed to the restricted environment and the aforementioned sensitization. Thus, the bonding of the carborane clusters to two stilbene units preserves their PL behavior in solution, but produces significant changes in the solid state. Furthermore, iodinated species can be considered to be promising precursors for theranostic agents in which both imaging and therapeutic functions could possibly be combined. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Near-unity photoluminescence quantum yield in MoS2

    KAUST Repository

    Amani, Matin; Lien, Der Hsien; Kiriya, Daisuke; Xiao, Jun; Azcatl, Angelica; Noh, Jiyoung; Madhvapathy, Surabhi R.; Addou, Rafik; Santosh, K. C.; Dubey, Madan; Cho, Kyeongjae; Wallace, Robert M.; Lee, Si Chen; He, Jr-Hau; Ager, Joel W.; Zhang, Xiang; Yablonovitch, Eli; Javey, Ali

    2015-01-01

    Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

  14. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

    2013-01-01

    Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

  15. Multifunctional porous silicon nanopillar arrays: antireflection, superhydrophobicity, photoluminescence, and surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Kiraly, Brian; Yang, Shikuan; Huang, Tony Jun

    2013-01-01

    We have fabricated porous silicon nanopillar arrays over large areas with a rapid, simple, and low-cost technique. The porous silicon nanopillars show unique longitudinal features along their entire length and have porosity with dimensions on the single-nanometer scale. Both Raman spectroscopy and photoluminescence data were used to determine the nanocrystallite size to be <3 nm. The porous silicon nanopillar arrays also maintained excellent ensemble properties, reducing reflection nearly fivefold from planar silicon in the visible range without any optimization, and approaching superhydrophobic behavior with increasing aspect ratio, demonstrating contact angles up to 138°. Finally, the porous silicon nanopillar arrays were made into sensitive surface-enhanced Raman scattering (SERS) substrates by depositing metal onto the pillars. The SERS performance of the substrates was demonstrated using a chemical dye Rhodamine 6G. With their multitude of properties (i.e., antireflection, superhydrophobicity, photoluminescence, and sensitive SERS), the porous silicon nanopillar arrays described here can be valuable in applications such as solar harvesting, electrochemical cells, self-cleaning devices, and dynamic biological monitoring. (paper)

  16. Near-unity photoluminescence quantum yield in MoS2

    KAUST Repository

    Amani, Matin

    2015-11-26

    Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

  17. Anthracene-Based Lanthanide Metal-Organic Frameworks: Synthesis, Structure, Photoluminescence, and Radioluminescence Properties

    Directory of Open Access Journals (Sweden)

    Stephan R. Mathis

    2018-01-01

    Full Text Available Four anthracene-based lanthanide metal-organic framework structures (MOFs were synthesized from the combination of the lanthanide ions, Eu3+, Tb3+, Er3+, and Tm3+, with 9,10-anthracenedicarboxylic acid (H2ADC in dimethylformamide (DMF under hydrothermal conditions. The 3-D networks crystalize in the triclinic system with P-1 space group with the following compositions: (i {{[Ln2(ADC3(DMF4·DMF]}n, Ln = Eu (1 and Tb (2} and (ii {{[Ln2(ADC3(DMF2(OH22·2DMF·H2O]}n, Ln = Er (3 and Tm (4}. The metal centers exist in various coordination environments; nine coordinate in (i, while seven and eight coordinate in (ii. The deprotonated ligand, ADC, assumes multiple coordination modes, with its carboxylate functional groups severely twisted away from the plane of the anthracene moiety. The structures show ligand-based photoluminescence, which appears to be significantly quenched when compared with that of the parent H2ADC solid powder. Structure 2 is the least quenched and showed an average photoluminescence lifetime from bi-exponential decay of 0.3 ns. On exposure to ionizing radiation, the structures show radioluminescence spectral features that are consistent with the isolation of the ligand units in its 3-D network. The spectral features vary among the 3-D networks and appear to suggest that the latter undergo significant changes in their molecular and/or electronic structure in the presence of the ionizing radiation.

  18. Effect of proton irradiation on photoluminescent properties of PDMS-nanodiamond composites

    International Nuclear Information System (INIS)

    Borjanovic, Vesna; Hens, Suzanne; Shenderova, Olga; McGuire, Gary E; Lawrence, William G; Edson, Clark; Jaksic, Milko; Zamboni, Ivana; Vlasov, Igor

    2008-01-01

    Pure poly(dimethylsiloxane) (PDMS) films, PDMS-nanodiamond (ND) and pure nanodiamond powder were irradiated with 2 MeV protons under a variety of fluence and current conditions. Upon proton irradiation, these samples acquire a fluence-dependent photoluminescence (PL). The emission and excitation spectra, photostability and emission lifetime of the induced photoluminescence of PDMS and PDMS-ND samples are reported. Pure PDMS exhibits a noticeable stable blue PL, while the PDMS-ND composites exhibit a pronounced stable green PL under 425 nm excitation. The PL of PDMS-ND composites is much more prominent than that of pure PDMS or pure ND powder even when irradiated at higher doses. The origin of the significantly enhanced PL intensity for the proton-irradiated PDMS-ND composite is explained by the combination of enhanced intrinsic PL within ND particles due to ion-implantation-generated defects and by PL originating from structural transformations produced by protons at the nanodiamond/matrix interface.

  19. Porous silicon photoluminescence modification by colloidal gold nanoparticles: Plasmonic, surface and porosity roles

    Energy Technology Data Exchange (ETDEWEB)

    Mora, M.B. de la; Bornacelli, J. [Instituto de Física, Universidad Nacional Autónoma de México, México D.F. 04510 (Mexico); Nava, R. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico); Zanella, R. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, México D.F. 04510 (Mexico); Reyes-Esqueda, J.A., E-mail: betarina@gmail.com [Instituto de Física, Universidad Nacional Autónoma de México, México D.F. 04510 (Mexico)

    2014-02-15

    Metal nanoparticles on semiconductors are of interest because of the tunable effect of the surface plasmon resonance on the physical properties of the semiconductor. In this work, colloidal gold nanoparticles obtained by two different methods, with an average size of 6.1±2.0 nm and 5.0±2.0 nm, were added to luminescent porous silicon by drop casting. The gold nanoparticles interact with porous silicon by modifying its optical properties such as photoluminescence. That being said, plasmon effects are not the only to be taken into account; as shown in this work, surface chemical modification and porosity also play a key role in the final performance of photoluminescence of a porous silicon–gold nanoparticle hybrid system. -- Highlights: • A hybrid material consisting of porous silicon and gold nanoparticles was fabricated. • Porous silicon/gold nanoparticle hybrid material was made by drop casting. • Influence of plasmonics, surface chemical modification and porosity on the optical behavior of our material was analyzed. • Porosity is proposed as a parameter control to obtain the best effects on luminescence of the hybrid plasmonic material.

  20. Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films

    International Nuclear Information System (INIS)

    Zatsepin, A.F.; Buntov, E.A.; Pustovarov, V.A.; Fitting, H.-J.

    2013-01-01

    The results of low-temperature time-resolved photoluminescence (PL) investigation of thin SiO 2 films implanted with Se + ions are presented. The films demonstrate an intensive PL band in the violet spectral region, which is attributed to the triplet luminescence of a new variant of selenium-related oxygen deficient center (ODC). The main peculiarity of the defect energy structure is the inefficient direct optical excitation. Comparison with spectral characteristics of isoelectronic Si-, Ge- and SnODCs show that the difference in electronic properties of the new center is related to ion size factor. It was established that the dominating triplet PL excitation under VUV light irradiation is related to the energy transfer from SiO 2 excitons. A possible model of Se-related ODC is considered. -- Highlights: • The low-temperature photoluminescence of thin SiO 2 films implanted with Se + ions was studied. • The 3.4 eV PL band was attributed to triplet luminescence of Se-related ODC. • The peculiarity of SeODC electronic properties is related to ion size factor. • The dominating VUV excitation of triplet PL is related to energy transfer from SiO 2 excitons. • A possible model of Se-related ODC is considered

  1. Influence of plasmon coupling on the photoluminescence of ZnS/Ag nanoparticles obtained by laser irradiation in liquid

    Science.gov (United States)

    Moos, Rafaela; Graff, Ismael L.; de Oliveira, Vinicius S.; Schreiner, Wido H.; Bezerra, Arandi G.

    2017-10-01

    We investigate the photoluminescence, optical absorption and structural properties of ZnS submitted to laser irradiation in water and isopropyl alcohol. Nanoparticles were produced by irradiating micro-sized ZnS particles dispersed in both liquids, with and without the addition of Ag nanoparticles, taking advantage of the laser-assisted fragmentation effect. When ZnS microparticles are irradiated either in pure water or isopropyl alcohol a considerable size reduction is achieved (from micra to few nanometers). The photoluminescence of these nanoparticles mainly occurs in the UV, centered at 350 nm, and with smaller intensity in the visible, centered at 600 nm. Irradiation of ZnS microparticles dispersed in colloidal silver triggers a reaction between both materials, modifying its optical absorption and photoluminescent properties. After irradiation of ZnS in alcohol containing Ag nanoparticles, a giant increase of the UV photoluminescence is observed. Interestingly, when the irradiation is performed in aqueous Ag nanoparticles colloids, the photoluminescence suffers a red-shift towards the violet-blue. The data show that core-shell (Ag-ZnO) nanostructures are formed after irradiation and the visible emission likely originates from the ZnO shell grown around silver nanoparticles. The presence of Ag nanoparticles in the liquid medium promotes a stronger absorption of the laser beam during irradiation due to the coupling with the surface plasmon resonance, fostering intense reactions among ZnS, Ag nanoparticles, and the liquid medium. Our study shows that with a simple change of the liquid medium wherein the irradiation is conducted the photoluminescence can be tuned from UV to visible and core-shell nanostructures can be obtained.

  2. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru

  3. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

    Science.gov (United States)

    Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

    2012-04-01

    The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

  4. Synthesis, characterization and photoluminescence properties of Dy{sup 3+}-doped nano-crystalline SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Pillai, Sreejarani K.; Sikhwivhilu, Lucky M. [National Centre for Nano-Structured Materials, CSIR, PO Box 395, Pretoria 0001 (South Africa); Hillie, Thembela K., E-mail: thillie@csir.co.za [National Centre for Nano-Structured Materials, CSIR, PO Box 395, Pretoria 0001 (South Africa); Physics Department, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

    2010-04-15

    Nano-crystalline of tin oxide doped with varying wt% of Dy{sup 3+} was prepared using chemical co-precipitation method and characterised by various advanced techniques such as BET-surface area, Fourier transform infrared spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence measurements. Analytical results demonstrated that the nanocrystalline tin oxide is in tetragonal crystalline phase and doping with Dy{sup 3+} could inhibit the phase transformation, increases surface area and decreases the crystallite size. The experimental result on photoluminescence characteristics originating from Dy{sup 3+}-doping in nanocrystalline SnO{sub 2} reveals the dependence of the luminescent intensity on dopant concentration.

  5. Photoluminescence properties of Li{sup +}-doped KNbO{sub 3}: Eu{sup 3+} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Balakrishnaiah, R.; Kim, Dongwoo; Yi, Soungsoo; Kim, Sunghoon [Silla University, Busan (Korea, Republic of); Jang, Kiwan; Lee, Hosueb [Changwon National University, Changwon (Korea, Republic of); Moon, Byungkee; Jeong, Junghyun [Pukyong National University, Busan (Korea, Republic of)

    2010-12-15

    Different concentrations of Li{sup +}-ions doped KNbO{sub 3}:Eu polycrystalline powder phosphors were prepared by using the conventional solid state reaction method and were characterized by using X-ray diffraction, field emission scanning electron microscopy, and by using photoluminescence excitation and emission measurements. The morphological and the photoluminescence properties of the phosphors were effectively improved with Li-doping. The PL properties as a function of Li concentration in the Li-doped KNbO{sub 3}:Eu phosphors using different excitation wavelengths, along with a comparison of results with these in similar reported works, are discussed in the present work.

  6. Photoluminescence decay dynamics in γ-Ga2O3 nanocrystals: The role of exclusion distance at short time scales

    Science.gov (United States)

    Fernandes, Brian; Hegde, Manu; Stanish, Paul C.; Mišković, Zoran L.; Radovanovic, Pavle V.

    2017-09-01

    We developed a comprehensive theoretical model describing the photoluminescence decay dynamics at short and long time scales based on the donor-acceptor defect interactions in γ-Ga2O3 nanocrystals, and quantitatively determined the importance of exclusion distance and spatial distribution of defects. We allowed for donors and acceptors to be adjacent to each other or separated by different exclusion distances. The optimal exclusion distance was found to be comparable to the donor Bohr radius and have a strong effect on the photoluminescence decay curve at short times. The importance of the exclusion distance at short time scales was confirmed by Monte Carlo simulations.

  7. On the acceptor-related photoluminescence spectra of GaAs quantum-wire microcrystals: A model calculation

    International Nuclear Information System (INIS)

    Oliveira, L.E.; Porras Montenegro, N.; Latge, A.

    1992-07-01

    The acceptor-related photoluminescence spectrum of a GaAs quantum-wire microcrystal is theoretically investigated via a model calculation within the effective-mass approximation, with the acceptor envelope wave functions and binding energies calculated through a variational procedure. Typical theoretical photoluminescence spectra show two peaks associated to transitions from the n = 1 conduction subband electron gas to acceptors at the on-center and on-edge positions in the wire in good agreement with the recent experimental results by Hirum et al. (Appl. Phys. Lett. 59, 431 (1991)). (author). 14 refs, 3 figs

  8. Photoluminescence properties of the composite of porous alumina and poly (2,5-dibutoxy-1,4 phenylenevinylene)

    International Nuclear Information System (INIS)

    Zhao Yi; Yang Deren; Zhou Chengyao; Yang Qing; Que Duanlin

    2003-01-01

    The spin coating method was used to assemble polymer (Poly (2,5-dibutoxy-1,4-phenylenevinylene)) (DBO-PPV) into the pores of porous alumina which was prepared by anodization. Four peaks in the photoluminescence (PL) spectra of the composite, with contributions from the DBO-PPV and porous alumina, were found. It was also found that the light emitting from the porous alumina could excite the photoluminescence of DBO-PPV. The nanometer effect of the porous alumina can lead to a blue shift of 90 nm of the PL peaks of DBO-PPV

  9. Time-resolved photoluminescence investigation of (Mg, Zn) O alloy growth on a non-polar plane

    Science.gov (United States)

    Mohammed Ali, Mohammed Jassim; Chauveau, J. M.; Bretagnon, T.

    2018-04-01

    Excitons recombination dynamics in ZnMgO alloy have been studied by time-resolved photoluminescence according to temperature. At low temperature, localisation effects of the exciton are found to play a significant role. The photoluminescence (PL) decays are bi-exponential. The short lifetime has a constant value, whereas the long lifetime shows a dependency with temperature. For temperature higher than 100 K the declines show a mono-exponential decay. The PL declines are dominated by non-radiative process at temperatures above 150 K. The PL lifetime dependancy with temperature is analysed using a model including localisation effects and non-radiative recombinations.

  10. Excitation wavelength dependent photoluminescence emission behavior, UV induced photoluminescence enhancement and optical gap tuning of Zn0.45Cd0.55S nanoparticles for optoelectronic applications

    Science.gov (United States)

    Osman, M. A.; Abd-Elrahim, A. G.

    2018-03-01

    In the present study, we investigate the excitation wavelength (λex) dependent photoluminescence (PL) behavior in Zn0.45Cd0.55S nanoparticles. The deconvoluted PL emission bands for nanopowders and nanocolloids reveal noticeable spectral blue shift with decreasing λex accompanied by intensity enhancement. This unusual behavior is explained in terms of selective particle size distribution in nanostructures, advancing of fast ionization process at short λex; and solvation process in polar solvent. In addition, we attributed the UV-induced PL intensity enhancement and blue shift of the optical gap to the reduction in particle size by photo-corrosion process associated with the improvement in the quantum size effect; surface modification due to cross-linkage improvement of capping molecules at NPs surface; the creation of new radiative centers and the formation of photo-passivation layers from ZnSO4 and CdSO4, and photo-enhanced oxygen adsorption on Zn0.45Cd0.55S nanoparticles surface.

  11. Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Koida, T. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Uedono, A. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Sota, T. [Department of Electrical, Engineering and Bioscience, Waseda University, Shinjuku 169-8555 (Japan); Kawasaki, M. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044 (Japan); Chichibu, S.F. [NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Photodynamics Research Center, RIKEN, Sendai 980-0868 (Japan)

    2004-09-01

    The roles of point defects and defect complexes governing nonradiative processes in ZnO epilayers were studied using time-resolved photoluminescence (PL) and slow positron annihilation measurements. The density or size of Zn vacancies (V{sub Zn}) decreased and the nonradiative PL lifetime ({tau}{sub nr}) increased with higher growth temperature for epilayers grown on a ScAlMgO{sub 4} substrate. Accordingly, the steady-state free excitonic PL intensity increased with increase in {tau}{sub nr} at room temperature. The use of a homoepitaxial substrate further decreased the V{sub Zn} concentration. However, no perfect relation between {tau}{sub nr} and the density or size of V{sub Zn} or other positron scattering centers was found. The results indicated that nonradiative recombination processes are governed not solely by single point defects, but by certain defect species introduced by the presence of V{sub Zn} such as vacancy complexes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Mechanoluminescence, photoluminescence and thermoluminescence studies of SrZrO3:Ce phosphor

    Directory of Open Access Journals (Sweden)

    Neha Tiwari

    2015-01-01

    Full Text Available The present paper reports the synthesis and characterization, photoluminescence thermoluminescence and mechanoluminescence studies of Ce3+ doped SrZrO3 phosphors. The effects of variable concentration of Cerium on meachanoluminescence (ML and photoluminescence behavior were studied. The samples were prepared by combustion a synthesis technique which is suitable for less time taking techniques also for large scale production for phosphors. The starting material used for sample preparation are Sr(NO33, Zr(NO33 XH2O and Ce(NO33 6H2O and urea used as a fuel. The prepared sample was characterized by X-ray diffraction technique (XRD with variable concentration of Ce (0.05–0.5 mol%. There is no any phase change found with increase the concentration of Ce. Sample shows orthorhombic structure and the particle size calculated by Scherer's formula. The surface morphology of prepared phosphor was determined by field emission gun scanning electron microscopy (FEGSEM technique. Mechanoluminescence studies on SrZrO3phosphors doped with Ce and underwent an impulsive deformation with an impact of a piston for Mechanoluminescence (ML investigations. Temporal characteristics in order to investigate about the luminescence centre responsible for ML peak, increasing impact velocity causes more number of electrons will be ionized to reach to the conduction band so there will be more number of electrons available to be recombined at recombination or luminescence centre. In photoluminescence study PL emission spectra show the isolated peak position observed at 388 nm near UV region of spectrum due to 5d–4f transition of Ce3+ion.Thermoluminescence study shows doping of Ce3+ ions reduced the TL intensity TL glow curve shows the high fading and less stability when it doped with cerium. The activation energy high for the doped SrZrO3 phosphor means that the trapped electron is highly trapped in trap level. The present study gives the advance application for fracture

  13. Simultaneous synthesis and densification of transparent, photoluminescent polycrystalline YAG by current activated pressure assisted densification (CAPAD)

    Energy Technology Data Exchange (ETDEWEB)

    Penilla, E.H.; Kodera, Y. [Mechanical Engineering Dept., Materials Science and Engineering Program, University of California, Riverside (United States); Garay, J.E., E-mail: jegaray@engr.ucr.edu [Mechanical Engineering Dept., Materials Science and Engineering Program, University of California, Riverside (United States)

    2012-08-20

    Highlights: Black-Right-Pointing-Pointer We report a method for the synthesis of transparent and PL bulk polycrystalline Ce:YAG using CAPAD. Black-Right-Pointing-Pointer The process uses {gamma}-Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and CeO{sub 2} nanopowders, reacted and densified simultaneously. Black-Right-Pointing-Pointer The synthesis/densification kinetics are faster than those reported previously. Black-Right-Pointing-Pointer Optical measurements show good transparency in the visible and photoluminescence (PL) in the Ce:YAG. Black-Right-Pointing-Pointer The PL peak is broad and appears white when excited using blue light. - Abstract: We report a method for the synthesis and processing of transparent bulk polycrystalline yttrium aluminum garnet (YAG) and photoluminescent Ce-doped YAG ceramics via solid-state reactive-current activated pressure assisted densification (CAPAD). The process uses commercially available {gamma}-Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and CeO{sub 2} nanopowders. The nanopowders were reacted and densified simultaneously at temperatures between 850 Degree-Sign C and 1550 Degree-Sign C and at a maximum pressure of 105 MPa. The solid-state reaction to phase pure YAG occurs in under 4 min at processing temperatures 1100 Degree-Sign C which is significantly faster (on the order of tens of hours) and occurs at much lower temperatures ({approx}600 Degree-Sign C) compared to conventional reaction sintering. We found that the reaction significantly improves densification - the shrinkage rate of reaction-produced YAG was three times higher than that of YAG using pre-reacted powder. The Ce additions were found to retard the reaction driven shrinkage kinetics by a factor {approx}3, but are still faster (by a factor {approx}1.6) than those associated with direct densification (no synthesis). Densities >99% were achieved in both pure YAG and Ce doped YAG (Ce:YAG). Results of optical measurements show good transparency in the visible and

  14. Simultaneous synthesis and densification of transparent, photoluminescent polycrystalline YAG by current activated pressure assisted densification (CAPAD)

    International Nuclear Information System (INIS)

    Penilla, E.H.; Kodera, Y.; Garay, J.E.

    2012-01-01

    Highlights: ► We report a method for the synthesis of transparent and PL bulk polycrystalline Ce:YAG using CAPAD. ► The process uses γ-Al 2 O 3 , Y 2 O 3 , and CeO 2 nanopowders, reacted and densified simultaneously. ► The synthesis/densification kinetics are faster than those reported previously. ► Optical measurements show good transparency in the visible and photoluminescence (PL) in the Ce:YAG. ► The PL peak is broad and appears white when excited using blue light. - Abstract: We report a method for the synthesis and processing of transparent bulk polycrystalline yttrium aluminum garnet (YAG) and photoluminescent Ce-doped YAG ceramics via solid-state reactive-current activated pressure assisted densification (CAPAD). The process uses commercially available γ-Al 2 O 3 , Y 2 O 3 , and CeO 2 nanopowders. The nanopowders were reacted and densified simultaneously at temperatures between 850 °C and 1550 °C and at a maximum pressure of 105 MPa. The solid-state reaction to phase pure YAG occurs in under 4 min at processing temperatures 1100 °C which is significantly faster (on the order of tens of hours) and occurs at much lower temperatures (∼600 °C) compared to conventional reaction sintering. We found that the reaction significantly improves densification – the shrinkage rate of reaction-produced YAG was three times higher than that of YAG using pre-reacted powder. The Ce additions were found to retard the reaction driven shrinkage kinetics by a factor ∼3, but are still faster (by a factor ∼1.6) than those associated with direct densification (no synthesis). Densities >99% were achieved in both pure YAG and Ce doped YAG (Ce:YAG). Results of optical measurements show good transparency in the visible and photoluminescence (PL) in the Ce:YAG. The PL peak is broad and appears white when excited using blue light confirming that the ceramics can be used in solid state lighting to produce white light.

  15. Plasmon-modulated photoluminescence from gold nanostructures and its dependence on plasmon resonance, excitation energy, and band structure

    NARCIS (Netherlands)

    Le Thi Ngoc, Loan; Wiedemair, Justyna; van den Berg, Albert; Carlen, Edwin

    2015-01-01

    Two distinct single-photon plasmon-modulated photoluminescence processes are generated from nanostructured gold surfaces by tuning the spectral overlap of the incident laser source, localized surface plasmon resonance band, and the interband transitions between the d and sp bands, near the X-and

  16. Time-resolved photoluminescence study of CdSe/CdMnS/CdS core/multi-shell nanoplatelets

    International Nuclear Information System (INIS)

    Murphy, J. R.; Delikanli, S.; Demir, H. V.; Scrace, T.; Zhang, P.; Norden, T.; Petrou, A.; Thomay, T.; Cartwright, A. N.

    2016-01-01

    We used photoluminescence spectroscopy to resolve two emission features in CdSe/CdMnS/CdS and CdSe/CdS core/multi-shell nanoplatelet heterostructures. The photoluminescence from the magnetic sample has a positive circular polarization with a maximum centered at the position of the lower energy feature. The higher energy feature has a corresponding signature in the absorption spectrum; this is not the case for the low-energy feature. We have also studied the temporal evolution of these features using a pulsed-excitation/time-resolved photoluminescence technique to investigate their corresponding recombination channels. A model was used to analyze the temporal dynamics of the photoluminescence which yielded two distinct timescales associated with these recombination channels. The above results indicate that the low-energy feature is associated with recombination of electrons with holes localized at the core/shell interfaces; the high-energy feature, on the other hand, is excitonic in nature with the holes confined within the CdSe cores.

  17. Preparation and photoluminescence properties of Mn2+-activated M2Si5N8 (M = Ca, Sr, Ba) phosphors

    NARCIS (Netherlands)

    Duan, C.J.; Otten, W.M.; Delsing, A.C.A.; Hintzen, H.T.J.M.

    2008-01-01

    Mn2+-doped M2Si5N8 (M=Ca, Sr, Ba) phosphors have been prepared by a solid-state reaction method at high temperature and their photoluminescence properties were investigated. The Mn2+-activated M2Si5N8 phosphors exhibit narrow emission bands in the wavelength range of 500–700 nm with peak center at

  18. Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

    2010-04-15

    A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

  19. Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

    Science.gov (United States)

    Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

    2018-06-01

    Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

  20. Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

    DEFF Research Database (Denmark)

    Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

    1995-01-01

    The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

  1. The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, Toshiaki [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan); Alfieri, Giovanni; Kawakami, Yoichi [Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan); Micheletto, Ruggero, E-mail: ruggero@yokohama-cu.ac.jp [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan)

    2017-01-15

    Highlights: • Photoluminescence of InGaN device is variable, there is no clear explanation for this. • We perform an ad-hoc absorption procedure, found that gases on the surface reduce emission. • We found that variability is related to the pressure of the gas in which the sample is immersed. • We point out the role of oxygen as major player in the reduction of photoluminescence. • A model is proposed and explains successfully the dynamical optical processes observed. - Abstract: We show for the first time that photoluminescence of InGaN single quantum wells (SQW) devices is related to the gas pressure in which the sample is immersed, also we give a model of the phenomena to suggest a possible cause. Our model shows a direct relation between experimental behavior and molecular coverage dynamics. This strongly suggests that the driving force of photoluminescence decrease is oxygen covering the surface of the device with a time dynamics that depends on the gas pressure. This aims to contribute to the understanding of the physical mechanism of the so-called optical memory effect and blinking phenomenon observed in these devices.

  2. Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films: the role of disorder

    International Nuclear Information System (INIS)

    Orhan, E.; Anicete-Santos, M.; Maurera, M.A.M.A.; Pontes, F.M.; Paiva-Santos, C.O.; Souza, A.G.; Varela, J.A.; Pizani, P.S.; Longo, E.

    2005-01-01

    The nature of intense visible photoluminescence at room temperature of SrWO 4 (SWO) non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The SWO thin films were synthesized by the polymeric precursors method. Their structural properties have been obtained by X-ray diffraction data and the corresponding photoluminescence (PL) spectra have been measured. The UV-vis optical spectra measurements suggest the creation of localized states in the disordered structure. The photoluminescence measurements reveal that the PL changes with the degree of disorder in the SWO thin film. To understand the origin of visible PL at room temperature in disordered SWO, we performed quantum-mechanical calculations on crystalline and disordered SWO periodic models. Their electronic structures are analyzed in terms of DOS, band dispersion and charge densities. We used DFT method with the hybrid non-local B3LYP approximation. The polarization induced by the symmetry break and the existence of localized levels favors the creation of trapped holes and electrons, giving origin to the room temperature photoluminescence phenomenon in the SWO thin films

  3. Time-resolved photoluminescence study of CdSe/CdMnS/CdS core/multi-shell nanoplatelets

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, J. R. [Department of Electrical Engineering, State University of New York, University at Buffalo, Buffalo, New York 14260 (United States); Department of Physics, State University of New York, University at Buffalo, Buffalo, New York 14260 (United States); Delikanli, S.; Demir, H. V., E-mail: volkan@bilkent.edu.tr [LUMINOUS Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, Nanyang Technological University, Singapore 639798 (Singapore); Department of Electrical and Electronics Engineering, Department of Physics, UNAM−Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Scrace, T.; Zhang, P.; Norden, T.; Petrou, A., E-mail: petrou@buffalo.edu [Department of Physics, State University of New York, University at Buffalo, Buffalo, New York 14260 (United States); Thomay, T.; Cartwright, A. N. [Department of Electrical Engineering, State University of New York, University at Buffalo, Buffalo, New York 14260 (United States)

    2016-06-13

    We used photoluminescence spectroscopy to resolve two emission features in CdSe/CdMnS/CdS and CdSe/CdS core/multi-shell nanoplatelet heterostructures. The photoluminescence from the magnetic sample has a positive circular polarization with a maximum centered at the position of the lower energy feature. The higher energy feature has a corresponding signature in the absorption spectrum; this is not the case for the low-energy feature. We have also studied the temporal evolution of these features using a pulsed-excitation/time-resolved photoluminescence technique to investigate their corresponding recombination channels. A model was used to analyze the temporal dynamics of the photoluminescence which yielded two distinct timescales associated with these recombination channels. The above results indicate that the low-energy feature is associated with recombination of electrons with holes localized at the core/shell interfaces; the high-energy feature, on the other hand, is excitonic in nature with the holes confined within the CdSe cores.

  4. Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence

    Directory of Open Access Journals (Sweden)

    Zhi-Min Liao

    2012-06-01

    Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.

  5. Enhancement of field emission and photoluminescence properties of graphene-SnO2 composite nanostructures.

    Science.gov (United States)

    Ding, Jijun; Yan, Xingbin; Li, Jun; Shen, Baoshou; Yang, Juan; Chen, Jiangtao; Xue, Qunji

    2011-11-01

    In this study, the SnO(2) nanostructures and graphene-SnO(2) (G-SnO(2)) composite nanostructures were prepared on n-Si (100) substrates by electrophoretic deposition and magnetron sputtering techniques. The field emission of SnO(2) nanostructures is improved largely by depositing graphene buffer layer, and the field emission of G-SnO(2) composite nanostructures can also further be improved by decreasing sputtering time of Sn nanoparticles to 5 min. The photoluminescence (PL) spectra of the SnO(2) nanostructures revealed multipeaks, which are consistent with previous reports except for a new peak at 422 nm. Intensity of six emission peaks increased after depositing graphene buffer layer. Our results indicated that graphene can also be used as buffer layer acting as interface modification to simultaneity improve the field emission and PL properties of SnO(2) nanostructures effectively.

  6. Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

    Science.gov (United States)

    Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

    2018-05-01

    ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

  7. Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; Sombrio, C I L; Franzen, P L

    2015-01-01

    Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep...... level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm...... the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments....

  8. Photoluminescence of acupoint 'Waiqiu' in human superficial fascia

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Yuan [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China); Yan Xiaohui [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China); Liu Chenglin [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China); Dang Ruishan [Second Military Medical University, Shanghai 200433 (China); Zhang Xinyi [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China) and Shanghai Research Center of Acupuncture and Meridian, Pudong, Shanghai 201203 (China)]. E-mail: xy-zhang@fudan.edu.cn

    2006-07-15

    The spectral characters of an acupuncture point named 'Waiqiu' in superficial fascia tissue have been studied by photoluminescence (PL) spectroscopy under the excitation of 457.9 nm. The PL around 'Waiqiu' acupuncture point consists of two sub-bands resulting from the flavin adenine dinucleotide (FAD) and phospholipids, and the porphyrins (including purine, isoxanthopterin and tryptophan), respectively. More emission due to FAD and phospholipids is found inside the acupuncture effect area of 'Waiqiu' than its marginal or outside acupuncture regions. The ratio of emission intensity of FAD and phospholipids to one of porphyrins gradually decreases along the direction away from the center of the acupuncture point. It implies that the component proportion changes between FAD, phospholipids and porphyrins around the 'Waiqiu' acupuncture point. We suggest that there might be a certain relationship between redox function of FAD and 'Waiqiu' acupuncture effect.

  9. Temperature-dependent excitonic photoluminescence of hybrid organometal halide perovskite films

    KAUST Repository

    Wu, Kewei; Bera, Ashok; Ma, Chun; Du, Yuanmin; Yang, Yang; LI, LIANG; Wu, Tao

    2014-01-01

    Organometal halide perovskites have recently attracted tremendous attention due to their potential for photovoltaic applications, and they are also considered as promising materials in light emitting and lasing devices. In this work, we investigated in detail the cryogenic steady state photoluminescence properties of a prototypical hybrid perovskite CH3NH3PbI3-xClx. The evolution of the characteristics of two excitonic peaks coincides with the structural phase transition around 160 K. Our results further revealed an exciton binding energy of 62.3 ± 8.9 meV and an optical phonon energy of 25.3 ± 5.2 meV, along with an abnormal blue-shift of the band gap in the high-temperature tetragonal phase. This journal is

  10. On the origin of excimer emission in electroluminescence and photoluminescence spectra of polyfluorenes

    International Nuclear Information System (INIS)

    Vacha, Martin; Ha, Jaekook; Sato, Hisaya

    2007-01-01

    We report a study on the differences in red-shifted excimer band in photoluminescence (PL) and electroluminescence (EL) spectra of thin films of a copolymer of dibutylfluorene and butylphenylphenoxazine. The relative intensity of the excimer band in PL spectra increases with temperature above the polymer glass transition, and with the intensity of the excitation light. In EL spectra, on the other hand, the relative excimer intensity is seen to decrease with increasing driving voltage. These opposite trends originate from the different nature of excitations in PL and EL spectra: photoexcitation directly creates singlet excitons while electric excitation proceeds via interaction of injected electrons and holes. In case of electric excitation, the observed results might be due to trap-assisted excimer formation

  11. Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

    International Nuclear Information System (INIS)

    Sun, Shibin; Chang, Xueting; Li, Zhenjiang

    2010-01-01

    Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

  12. Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)

    2010-09-15

    Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

  13. Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Prutskij, Tatiana, E-mail: tatiana.prutskij@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Makarov, Nykolay, E-mail: nykolay.makarov@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Attolini, Giovanni, E-mail: giovanni@imem.cnr.it [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

    2016-04-15

    Ternary and quaternary III–V alloys obtained by metal-organic vapor-phase epitaxy (MOVPE) grow very often with some degree of atomic ordering. Atomic ordering reduces the symmetry of the crystal lattice and thus drastically changes optical properties of the alloy. Moreover, the photoluminescence (PL) emission becomes polarized and its study helps to understand the atomic arrangement within the crystal lattice. In this work we experimentally studied the polarization of the PL emission from different crystallographic planes of several quaternary III–V semiconductor alloys grown on GaAs substrates by MOVPE. We compare the measured PL emission polarization angular patterns with those calculated with a model made for ternary alloys and discuss the limits of application of this model for quaternaries. It is found that the experimentally obtained polarization patterns are consistent with the existence of different ordering crystallographic planes for III- and for V-group atoms.

  14. Improved photoluminescence property of CTAB assisted polyaniline-AlZnO nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Mousumi; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata (India); Ganguly, Saibal [Chemical Engineering department, Universiti Teknology Petronas, Tronoh (Malaysia)

    2015-06-24

    Polyaniline-Al doped ZnO ((PANI-AlZnO:: 70:30) nanocomposite was prepared via in situ chemical oxidative polymerization, while the hexagonal powder of AlZnO was synthesized via sol-gel technique, using Hexadecyltrimethylammonium bromide (CTAB) as a capping agent. The prepared nanocomposite was characterized by High resolution transmission electron microscopy (HRTEM), EDAX, X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectra. The optical property of the nanomaterials is examined by photoluminescence (PL) spectra analysis. The XRD pattern confirms the formation of Al doped ZnO as well as PANI. The HRTEM images of the composite showed the formation of hexagonal AlZnO embedded in polyaniline matrix. EDAX spectrum shows the compositional analysis of the nanocomposite. FTIR spectra confirm the formation of nanocomposite of PANI and hexagonal AlZnO. The PL intensity of the nanocomposite is improved as compared to pure AlZnO.

  15. Minority Carrier Lifetime and Photoluminescence Studies of Antimony-Based Superlattices

    Science.gov (United States)

    Hoglund, Linda; Soibel, Alexander; Ting, David Z.; Khoshakhlagh, Arezou; Hill, Cory J.; Gunapala, Sarath D.

    2012-01-01

    In this paper, we have used the OMR technique to study the minority carrier lifetimes in three InAs/GaSb-photoluminescence (PL) structures with different number of periods in the absorber: 300, 400 and 600 periods respectively. The feasibility of using a visible 643 nm laser source with short penetration depth for lifetime measurements was studied by comparing the achieved results to measurements performed on the same samples with a 1550 nm IR laser source, which penetrates much deeper into the sample. Despite the differences in excitation wavelengths and penetration depths, the results from both measurements were very similar. This indicates that the diffusion length is long enough to facilitate a homogeneous distribution of excess carriers in the material.

  16. Synthesis of YVO4:Eu3+/YBO3Heteronanostructures with Enhanced Photoluminescence Properties

    Directory of Open Access Journals (Sweden)

    Hu Haihua

    2009-01-01

    Full Text Available Abstract Novel YVO4:Eu3+/YBO3core/shell heteronanostructures with different shell ratios (SRs were successfully prepared by a facile two-step method. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the heteronanostructures. Photoluminescence (PL study reveals that PL efficiency of the YVO4:Eu3+nanocrystals (cores can be improved by the growth of YBO3nanocoatings onto the cores to form the YVO4:Eu3+/YBO3core/shell heteronanostructures. Furthermore, shell ratio plays a critical role in their PL efficiency. The heteronanostructures (SR = 1/7 exhibit the highest PL efficiency; its PL intensity of the5D0–7F2emission at 620 nm is 27% higher than that of the YVO4:Eu3+nanocrystals under the same conditions.

  17. Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films

    Science.gov (United States)

    Cretı, A.; Valerini, D.; Taurino, A.; Quaranta, F.; Lomascolo, M.; Rella, R.

    2012-04-01

    The optical response by NO2 gas adsorption at different concentrations has been investigated, at room temperature, in ZnO nanostructured films grown by controlled vapor phase deposition. The variation (quenching) in the photoluminescence signal from excitonic and defects bands, due to the interactions between the oxidizing gas molecules and the sample surface, has been detected and dynamic responses and calibration curves as a function of gas concentration have been obtained and analyzed for each band. We showed that the sensing response results larger in excitonic band than in defect one and that the emission signal rises from two different quenchable and unquenchable states. A simple model was proposed in order to explain the quenching processes on the emission intensity and to correlate them to the morphological features of the samples. Finally, the reversibility of the quenching effects has also been tested at high gas concentration.

  18. Photoluminescence Enhancement of Poly(3-methylthiophene Nanowires upon Length Variable DNA Hybridization

    Directory of Open Access Journals (Sweden)

    Jingyuan Huang

    2018-01-01

    Full Text Available The use of low-dimensional inorganic or organic nanomaterials has advantages for DNA and protein recognition due to their sensitivity, accuracy, and physical size matching. In this research, poly(3-methylthiophene (P3MT nanowires (NWs are electrochemically prepared with dopant followed by functionalization with probe DNA (pDNA sequence through electrostatic interaction. Various lengths of pDNA sequences (10-, 20- and 30-mer are conjugated to the P3MT NWs respectively followed with hybridization with their complementary target DNA (tDNA sequences. The nanoscale photoluminescence (PL properties of the P3MT NWs are studied throughout the whole process at solid state. In addition, the correlation between the PL enhancement and the double helix DNA with various lengths is demonstrated.

  19. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2010-01-01

    Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  20. Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

    Directory of Open Access Journals (Sweden)

    Michael Vetter

    2016-12-01

    Full Text Available The room temperature photoluminescence (PL spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.