Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

Science.gov (United States)

Li, Yang; Wang, Tianmeng; Wu, Meng; Cao, Ting; Chen, Yanwen; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Louie, Steven G.; Shi, Su-Fei

2018-04-01

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

Growth and characterization of monocrystals from HgI2 semiconductor compound for using in X and gamma spectroscopy

International Nuclear Information System (INIS)

Faria, L.O. de.

1987-09-01

Mercury Iodide (HgI 2 ) platelets were grown from the vapor phase in the presence of polymers. These platelets are convenient to be used as room temperature operating semiconductor radiation detectors. Experiments demonstrate that the growth of platelets depends on a two-stage mass transport instead of depending on just one, as it has been thought. HgI 2 platelets 30 mm 2 large and 90 μm thick were obtained in a sealed evacuated fused quartz tube and were characterized by etch pit density measurements. (author)

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

Science.gov (United States)

Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-10-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Dung, Nguyen Duc [Advanced Institute of Science and Technology, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam)

2016-11-15

We report the characteristic photoluminescence (PL) spectra of erbium ion (Er{sup 3+})-doped tin dioxide (SnO{sub 2})nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er{sup 3+} ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO{sub 2} and its average particle diameter of approximately 5 nm did not change with Er{sup 3+} ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er{sup 3+} ions. The PL excitation spectra referred to an efficient energy transfer to Er{sup 3+} ions in the presence of SnO{sub 2}nanoparticles. The most intense Er-related emission of SnO{sub 2}:Er{sup 3+} nanoparticles in near infrared region was found in samples containing an Er{sup 3+} ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO{sub 2} nanoparticles.

Radiometric and dosimetric characteristics of HgI2 detectors

International Nuclear Information System (INIS)

Zaletin, V.M.; Krivozubov, O.V.; Torlin, M.A.; Fomin, V.I.

1988-01-01

The characteristics of HgI 2 detectors in x-ray and gamma detection in applications to radiometric and dosimetric monitoring and as portable instruments for such purposes was considered. Blocks with mosaic and sandwich structures were prepared and tested against each other and, for comparative purposes, against CdTe detectors for relative sensitivities at various gamma-quanta energies. Sensitivity dependencies on gamma radiation energy were plotted for the detector materials and structures as were current dependencies on the dose rate of x rays. Results indicated that the mercury iodide detectors could be used in radiometric and dosimetric measurements at gamma quantum energies up to and in excess of 1000 KeV

Analysis of HgI2 and PbI2 crystals and detectors by particle-induced x-ray emission (PIXE) and ion backscattering spectroscopy (IBS)

International Nuclear Information System (INIS)

Bench, G.S.; Heikkinen, D.W.; Antolak, A.J.; Morse, D.H.; Pontau, A.E.; James, R.B.; David, D.C.; Burger, A.; Van Den Berg, L.

1993-03-01

The Ion Micro-Analysis Group (IMAG) in Livermore conducts quantitative trace elemental analysis with PIXE and depth profiling with IBS using an MeV ion microbeam. The system has the capability to produce two-dimensional trace element and IBS images. PIXE analyses have been conducted on HgI 2 and PbI 2 crystals and detector materials in order to identify and quantify near surface trace contaminants. IBS measurements have been conducted to investigate elemental depth distributions in various materials. The results of measurements on several different samples are reported and a discussion of factors affecting quantitative in vacuo microanalysis of these materials is presented

Near-band-edge optical responses of solution-processed organic-inorganic hybrid perovskite CH3NH3PbI3 on mesoporous TiO2 electrodes

Science.gov (United States)

Yamada, Yasuhiro; Nakamura, Toru; Endo, Masaru; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

2014-03-01

We studied the near-band-edge optical responses of solution-processed CH3NH3PbI3 on mesoporous TiO2 electrodes, which is utilized in mesoscopic heterojunction solar cells. Photoluminescence (PL) and PL excitation spectra peaks appear at 1.60 and 1.64 eV, respectively. The transient absorption spectrum shows a negative peak at 1.61 eV owing to photobleaching at the band-gap energy, indicating a direct band-gap semiconductor. On the basis of the temperature-dependent PL and diffuse reflectance spectra, we clarified that the absorption tail at room temperature is explained in terms of an Urbach tail and consistently determined the band-gap energy to be ˜1.61 eV at room temperature.

Near-unity photoluminescence quantum yield in MoS.sub.2

Science.gov (United States)

Amani, Matin; Lien, Der-Hsien; Kiriya, Daisuke; Bullock, James; Javey, Ali

2017-12-26

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Influence of temperature upon dislocation mobility and elastic limit of single crystal HgI2

International Nuclear Information System (INIS)

Milstein, F.; Farber, B.; Kim, K.; van den Berg, L.; Schnepple, W.

1982-01-01

The practical importance of studying mechanical properties and dislocation structure of HgI 2 is reviewed briefly. Specifically, the performance of single crystal HgI 2 radiation detectors is evidently sensitive to crystalline imperfections; the dislocation structure, in turn, can be altered during detector fabrication, depending upon the mechanical properties of the crystal and the stresses to which the crystal is subjected. The influence of temperature upon dislocation mobility and plasticity in vapor-grown crystals of mercuric iodide is examined. Dislocation mobiity is determined by measuring the lengths of the longest arms of dislocation etch pit rosettes on (001) surfaces following microhardness indentation and chemical etch. Measurements were made in the range from room temperature to the phase transition temperature of 127 0 C. Dislocation mobility was found to be an increasing function of temperature, with the effect accelerating as the phase transition is approached. Increasing temperature was also found to lower the critical resolved shear stress for plastic deformation on slip on (001) planes. In these contexts, the vapor-grown crystals are clearly softer at their elevated growth temperatures. The results are discussed in terms of a dislocation model involving soft and hard glide dislocations

Band-edge photoluminescence in CdTe

International Nuclear Information System (INIS)

Horodysky, P.; Grill, R.; Hlidek, P.

2006-01-01

Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Contact and Bandgap Engineering in Two Dimensional Crystal

Science.gov (United States)

Chu, Tao

Hs DOS at the band edge of bilayer graphene, was experimentally observed in transport for the first time. (2) The bandgap of bilayer MoS2 is also predicted to be continuously tuned to zero by applying a perpendicular electric field. Here, the first experimental realization of tuning the bandgap of bilayer MoS2 by a vertical electric field is presented. An analytical approach utilizing the threshold voltages from ambipolar characteristics is employed to quantitatively extract bandgaps, which is further benchmarked by temperature dependent bandgap measurements and photoluminescence measurements. (3) Few layer graphene is employed as an example to demonstrate a novel self-aligned edge contacting scheme for layered material systems.

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

2011-01-01

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

Performance of novel materials for radiation detection: Tl3AsSe3, TlGaSe2, and Tl4HgI6

International Nuclear Information System (INIS)

Kahler, D.; Singh, N.B.; Knuteson, D.J.; Wagner, B.; Berghmans, A.; McLaughlin, S.; King, M.; Schwartz, K.; Suhre, D.; Gotlieb, M.

2011-01-01

In this paper we report on the electrical characteristics of three novel ternary compounds, Tl 3 AsSe 3 (TAS), TlGaSe 2 (TGS), and Tl 4 HgI 6 (THI), pertaining to their use as radiation detectors. The details for growth and material characterization are not presented. A semiconductor based gamma ray detector requires a material with high Z, high density, high resistivity, appropriate bandgap (1.5-2 eV), low energy/electron-hole pair, and a high μτ product. CZT is currently the best semiconductor material for room temperature gamma ray spectroscopy; however, it is extremely difficult to produce large volumes of detector grade material, making it expensive and in limited supply. DNDO/DHS began searching for other materials that might perform as well as CZT but be easier to grow and in the end lower the cost. For this purpose, we investigated the above three materials as possible replacements for CZT as gamma ray detectors. The bulk resistivity, I-V curves, X-ray response, and gamma ray response measurements for doped and undoped crystals are presented and discussed. TAS shows good X-ray and gamma ray response, but has poor resistivity, which results in large dark current and poor spectral response. TGS has good resistivity, but shows poor X-ray and gamma ray response. THI has excellent resistivity, shows some X-ray and gamma ray response, and has great potential as a gamma ray detector.

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

Science.gov (United States)

Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-01

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

Effect of zinc doping on the bandgap and photoluminescence of Zn2+-doped TiO2 nanowires

Science.gov (United States)

Loan, Trinh Thi; Huong, Vu Hoang; Tham, Vu Thi; Long, Nguyen Ngoc

2018-03-01

This study was focused on the effect of Zn2+ dopant concentration on the absorption edge and photoluminescence of anatase TiO2 nanowires synthesized by hydrothermal technique. For the undoped anatase TiO2 nanowires, the indirect band gap of 3.26 eV and the direct band gap of 3.58 eV are assigned to the indirect Γ3 → X1b and direct X2b → X1b transitions, respectively. The Zn2+-doping makes the absorption edge of TiO2:Zn2+ nanowires shift towards the lower energy side (red shift). On the other hand, the replacing Ti4+ ions with Zn2+ ions creates oxygen vacancies (VO) and shallow defects associated with VO. Just these defects are responsible for the enhanced luminescence of Zn2+-doped TiO2 nanowires.

Performance of room temperature mercuric iodide (HgI2) detectors in the ultra low energy x-ray region

International Nuclear Information System (INIS)

Dabrowski, A.J.; Iwanczyk, J.S.; Barton, J.B.; Huth, G.C.; Whited, R.; Ortale, C.; Economou, T.E.; Turkevich, A.L.

1980-01-01

Performance of room temperature mercuric iodide x-ray spectrometers has been recently improved through new fabrication techniques and further development of low noise associated electronic systems. This progress has extended the range of measurements to the ultra low energy x-ray region at room temperature. This paper reports the study of the effect of contact material on the performance of HgI 2 detectors in the low energy x-ray region

Wide bandgap engineering of (AlGa)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

2014-01-01

Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

Science.gov (United States)

Wanlass, Mark W [Golden, CO; Mascarenhas, Angelo [Lakewood, CO

2012-05-08

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells

Directory of Open Access Journals (Sweden)

A. Le Donne

2015-01-01

Full Text Available Cu2ZnSnS4 (CZTS absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, GaSe2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

Laser excited novel near-infrared photoluminescence bands in fast neutron-irradiated MgO·nAl2O3

International Nuclear Information System (INIS)

Rahman, Abu Zayed Mohammad Saliqur; Haseeb, A.S.M.A.; Xu, Qiu; Evslin, Jarah; Cinausero, Marco

2016-01-01

New near-infrared photoluminescence bands were observed in neutron-irradiated spinel single crystal upon excitation by a 532 nm laser. The surface morphology of the unirradiated and fast neutron-irradiated samples was investigated using atomic force microscopy and scanning probe microscopy. Fast neutron-irradiated samples show a strong emission peak at 1685 nm along with weak bands at 1065 and 2365 nm. The temperature dependence of the photoluminescence intensity was also measured. At lower temperatures, the dominant peak at 1685 nm shifts toward lower energy whereas the other peaks remain fixed. Activation energies of luminescence quenching were estimated to be 5.7 and 54.6 meV for the lower and higher temperature regions respectively. - Highlights: • AFM and SPM were conducted to understand surface morphology of the unirrad and neutron-irradiated spinel. • Novel photoluminescence band at 1685 nm along with weak bands at 1065 and 2365 was observed. • Activation energy for luminescence quenching was estimated from Arrhenius equation.

On the origin of near-IR luminescence in SiO{sub 2} glass with bismuth as the single dopant. Formation of the photoluminescent univalent bismuth silanolate by SiO{sub 2} surface modification

Energy Technology Data Exchange (ETDEWEB)

Romanov, A.N., E-mail: alexey.romanov@list.ru; Haula, E.V.; Shashkin, D.P.; Vtyurina, D.N.; Korchak, V.N.

2017-03-15

Near infrared photoluminescent bismuth(I) silanolate centers ((≡Si-O){sub 3}Si–O-Bi) were prepared on the surface of SiO{sub 2} xerogel, by the treatment in the vapors of bismuth(I) chloride. The optical properties of these groups are almost identical to that of photoluminescent centers in the bulk SiO{sub 2} glasses with bismuth as the single dopant. - Highlights: • univalent bismuth silanolate can be prepared on SiO{sub 2} surface by treatment in BiCl vapors. • univalent bismuth silanolate is responsible for NIR photoluminescence in Bi-doped SiO{sub 2} glass. • univalent bismuth silanolate is the active center in laser, operating on Bi-doped SiO{sub 2} fiber.

Near-infrared emission from mesoporous crystalline germanium

Energy Technology Data Exchange (ETDEWEB)

Boucherif, Abderraouf; Aimez, Vincent; Arès, Richard, E-mail: richard.ares@usherbrooke.ca [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Korinek, Andreas [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario, L8S 4M1 (Canada)

2014-10-15

Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

Bandgap Engineering of Lead-Free Double Perovskite Cs2 AgBiBr6 through Trivalent Metal Alloying.

Science.gov (United States)

Du, Ke-Zhao; Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa; Mitzi, David B

2017-07-03

The double perovskite family, A 2 M I M III X 6 , is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH 3 NH 3 PbI 3 . Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs 2 AgBiBr 6 as host, band-gap engineering through alloying of In III /Sb III has been demonstrated in the current work. Cs 2 Ag(Bi 1-x M x )Br 6 (M=In, Sb) accommodates up to 75 % In III with increased band gap, and up to 37.5 % Sb III with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs 2 Ag(Bi 0.625 Sb 0.375 )Br 6 . Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

AgCl-doped CdSe quantum dots with near-IR photoluminescence.

Science.gov (United States)

Kotin, Pavel Aleksandrovich; Bubenov, Sergey Sergeevich; Mordvinova, Natalia Evgenievna; Dorofeev, Sergey Gennadievich

2017-01-01

We report the synthesis of colloidal CdSe quantum dots doped with a novel Ag precursor: AgCl. The addition of AgCl causes dramatic changes in the morphology of synthesized nanocrystals from spherical nanoparticles to tetrapods and finally to large ellipsoidal nanoparticles. Ellipsoidal nanoparticles possess an intensive near-IR photoluminescence ranging up to 0.9 eV (ca. 1400 nm). In this article, we explain the reasons for the formation of the ellipsoidal nanoparticles as well as the peculiarities of the process. The structure, Ag content, and optical properties of quantum dots are also investigated. The optimal conditions for maximizing both the reaction yield and IR photoluminescence quantum yield are found.

Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange.

Science.gov (United States)

Ma, Quan; Isarraraz, Miguel; Wang, Chen S; Preciado, Edwin; Klee, Velveth; Bobek, Sarah; Yamaguchi, Koichi; Li, Emily; Odenthal, Patrick Michael; Nguyen, Ariana; Barroso, David; Sun, Dezheng; von Son Palacio, Gretel; Gomez, Michael; Nguyen, Andrew; Le, Duy; Pawin, Greg; Mann, John; Heinz, Tony F; Rahman, Talat Shahnaz; Bartels, Ludwig

2014-05-27

We demonstrate bandgap tuning of a single-layer MoS2 film on SiO2/Si via substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement. Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation in air.

LETTER TO THE EDITOR: Green emission and bandgap narrowing due to two-photon excitation in thin film CdS formed by spray pyrolysis

Science.gov (United States)

Ullrich, B.; Schroeder, R.

2001-08-01

Thin (10 µm) film CdS on Pyrex® formed by spray pyrolysis is excited below the gap at 804 nm with 200 fs laser pulses at room temperature. Excitation intensities up to 250 GW cm-2 evoke green bandgap emission due to two-photon transitions. This two-photon photoluminescence does not show a red emission contribution in contrast to the single-photon excited emission, which is dominated by broad emission in the red spectral range. It is demonstrated that two-photon excitation causes photo-induced bandgap narrowing due to Debye screening. At 250 GW cm-2 bandgap narrowing of 47 meV is observed, which corresponds to an excited electron density of 1.6×1018 cm-3.

Crystal growth and applications of mercuric iodide. Report S-242-TP

International Nuclear Information System (INIS)

Schieber, M.; Roth, M.; Schnepple, W.F.

1983-01-01

A brief summary is given of a paper which discusses the crystal growth of mercuric iodide, a high-Z wide bandgap semiconductor suitable as a low noise, room temperature x-ray and gamma-ray detector. The paper summarized also reviews the state-of-the-art of the synthesis and purification of the starting material, mechanical properties and dislocation structure of HgI 2 , and recent success in the development of thick HgI 2 spectrometers

Field-portable high-resolution EDXRF analysis with HgI2-detector-based instrumentation

International Nuclear Information System (INIS)

Berry, P.F.; Little, S.R.; Voots, G.R.

1992-01-01

Energy dispersive x-ray fluorescence (EDXRF) analysis is well known for its efficient use of x-ray detector technology for simultaneous multielement determination. Low-intensity excitation, such as from a radioisotope source, can thus be employed and has enabled the design of many types of truly portable EDXRF instrumentation. Portable design, however, has not been without significant compromise in analytical performance because of the limited x-ray resolving power of prior detection methods, except by the use of a cryogenically operated detector. The developments we refer to stem from the use of a comparatively new x-ray detection device fabricated from mercuric iodide (HgI 2 ). For this detector, only a modest degree of cooling is required to achieve an energy resolution of > 300 eV. Two field-portable instrument designs of different hand-held measurement probe configurations are available that have applications for industrial quality assurance and environmental screening

Bandgap engineering of lead-free double perovskite Cs_2AgBiBr_6 through trivalent metal alloying

International Nuclear Information System (INIS)

Du, Ke-zhao; Mitzi, David B.; Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa

2017-01-01

The double perovskite family, A_2M"IM"I"I"IX_6, is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH_3NH_3PbI_3. Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs_2AgBiBr_6 as host, band-gap engineering through alloying of In"I"I"I/Sb"I"I"I has been demonstrated in the current work. Cs_2Ag(Bi_1_-_xM_x)Br_6 (M=In, Sb) accommodates up to 75 % In"I"I"I with increased band gap, and up to 37.5 % Sb"I"I"I with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs_2Ag(Bi_0_._6_2_5Sb_0_._3_7_5)Br_6. Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Correlations between plastic deformation parameters and radiation detector quality in HgI2

International Nuclear Information System (INIS)

Georgeson, G.; Milstein, F.; California Univ., Santa Barbara

1989-01-01

Mercuric iodide radiation detectors of various grades of quality were subjected to shearing forces in the (001) crystallographic planes using a specially designed micromechanical shear testing fixture. Experimental measurements were made of (001) shear stress versus shear strain. Each of the stress-strain curves was described by two empirically determined deformation parameters, s 0 and σ, where s 0 is a measure of 'bulk yielding' and σ indicates the 'sharpness of yielding' during plastic deformation. It was observed that the deformation parameters of many HgI 2 single crystal samples fit the relation s 0 =8σ 2/3 and that significant deviation from this relation, with s 0 >8σ 2/3 , indicates poor detector quality. Work hardening by prior plastic deformation was also found to cause s 0 to depart (in an increasing manner) from the 8σ 2/3 relation. For good quality material that has not previously been plastically deformed, the deformation parameter s c =s 0 -2σ<19 psi; this parameter can be interpreted as the 'onset of plastic yielding'. The results are discussed in terms of dislocation mechanisms for plastic deformation, work hardening, and recovery of work hardening. (orig.)

Introduction to fifth international workshop on mercuric iodide nuclear radiation detectors

International Nuclear Information System (INIS)

Schieber, M.

1982-01-01

Mercuric iodide is a wide bandgap semiconductor, with Eg approx. = 2.14 eV at room temperature. Therefore, HgI 2 is totally different from the well-studied, narrower gap, elemental semiconductors such as Si and Ge, and also different in its physical and chemical properties from the known semiconductor binary zinc-blend compounds such as GaAs or InP. The purpose of studies in the last decade was to further our understanding of HgI 2 ; recent progress is reported

Synthesis and Near IR Photoluminescence of Os(II) Bis(2,2'-bipyridine) (3,8-Diarylethynyl-1,10-phemanthroline) Complexes: Anomalous Behavior of the 3,8-Dinitrophenylethynyl-substituted Homologue

Science.gov (United States)

Yang, Jinhua; Dass, Amala; Sotiriou-Leventis, Chariklia; Tyson, Daniel S.; Leventis, Nicholas

2005-01-01

A large bathochromic shift (50 nm) and emission in the near infrared is observed by attaching arylethynyl groups at the 3,8-positions of the 1,10-phenanthroline ligand (phen) of [Os(bipy)2(phen)]2+ (where bipy = 2,2'-bipyridine). Thus [Os(bipy)2(3,8-di-4-methoxyphenylethynyl-1,10-phenathroline)]2+ emits at 795 nm, while [Os(bipy)2(3,8-diphenylethynyl-1,10-phenanthroline)]2+ emits at 815 nm. According to this trend it would have been expected that [Os(bipy)2(3,8-di-4-nitrophenylethynyl-1,10-phenathroline)]2+ emits farther in the near infrared. Nevertheless, this complex is not photoluminescent because of intramolecular electron transfer quenching of the MLCT excited state by the nitroaromatic group. These results set structural and redox potential standards in the design of near infrared emitters based on [Os(bipy)2(phen)]2+ type complexes.

Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

KAUST Repository

Zhou, Hang

2014-03-27

We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Mudryi, A.V. [Scientific-Practical material Research Centre of the National Academy of Sciences of Belarus, P.Brovki 19, 220072 Minsk (Belarus); Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom); Yakushev, M.V., E-mail: michael.yakushev@strath.ac.uk [Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom); Ural Federal University, Ekaterinburg 620002 (Russian Federation); Institute of Solid State Chemistry of the Urals Branch of the Russian Academy of Scienses, Ekaterinburg 620990 (Russian Federation); Volkov, V.A. [Ural Federal University, Ekaterinburg 620002 (Russian Federation); Zhivulko, V.D.; Borodavchenko, O.M. [Scientific-Practical material Research Centre of the National Academy of Sciences of Belarus, P.Brovki 19, 220072 Minsk (Belarus); Martin, R.W. [Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom)

2017-06-15

A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS{sub 2} single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS{sub 2} crystals grown by THM and CVT, respectively.

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Bandgap engineering of lead-free double perovskite Cs{sub 2}AgBiBr{sub 6} through trivalent metal alloying

Energy Technology Data Exchange (ETDEWEB)

Du, Ke-zhao; Mitzi, David B. [Department of Mechanical Engineering and Materials Science, and Department of Chemistry, Duke University, Durham, NC (United States); Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, OH (United States)

2017-07-03

The double perovskite family, A{sub 2}M{sup I}M{sup III}X{sub 6}, is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH{sub 3}NH{sub 3}PbI{sub 3}. Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs{sub 2}AgBiBr{sub 6} as host, band-gap engineering through alloying of In{sup III}/Sb{sup III} has been demonstrated in the current work. Cs{sub 2}Ag(Bi{sub 1-x}M{sub x})Br{sub 6} (M=In, Sb) accommodates up to 75 % In{sup III} with increased band gap, and up to 37.5 % Sb{sup III} with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs{sub 2}Ag(Bi{sub 0.625}Sb{sub 0.375})Br{sub 6}. Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah; Hasanain, S. K.; Hassnain Jaffari, G.; Anjum, Dalaver H.; Qurashi, Umar S.

2014-01-01

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah

2014-08-28

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Opto-electronic characterization of polycrystalline CuInS2 and Cu(In,Ga)S2 absorber layers by photoluminescence

International Nuclear Information System (INIS)

Heidemann, Florian

2011-01-01

Photoluminescence (PL) is an established method to characterize the optoelectronic properties of solar cell absorber layers. With the help of Planck's generalized law it is in principle possible to determine the quasi-Fermi level splitting - which is the upper limit of the open circuit voltage V oc - and the absorption coefficient of a solar cell before its actual completion. For large-scale measurements (mm/cm regime) this is valid for absorber layers with lateral homogeneous properties, however it is not directly transferable to polycrystalline semiconductors due to laterally fluctuating opto-electronic and structural parameters. The lateral fluctuations in opto-electronic properties of polycrystalline Cu(In 1-ξ Ga ξ )S 2 have been analyzed (e.g. with respect to fluctuations in quasi-Fermi level splitting, optical band-gap and sub band-gap absorbance) by measuring laterally and spectrally resolved PL on the μm-scale and providing the transition towards macroscopic PL measurements on the mm-scale. To give a comprehensive characterization, surface roughness and optical properties have been studied and methods for feature extraction have been applied. On the microscopic scale variations in the quasi-Fermi level splitting Δ x,y E Fnp of about 38 meV (CuInS 2 ) and 53 meV (Cu(In,Ga)S 2 ) have been found. From local absorbance spectra extracted from PL measurements on Cu(In,Ga)S 2 fluctuations in the optical band-gap E opt with a full width at half maximum of FWHM E opt ∼80 meV could be extracted, whereas band-gap fluctuations in CuInS 2 are found to be negligible. Thus band-gap fluctuations seem to be mainly caused by a varying gallium (Ga) content. Furthermore, regions with higher E opt and with it a potential higher Ga content, show a higher quasi-Fermi level splitting. As a major limiting factor for the local quasi-Fermi level splitting E Fnp the local density of deep defects could be identified. Due to low luminescence yields of Cu(In 1-ξ Ga ξ )S 2 under

Direct-Indirect Nature of the Bandgap in Lead-Free Perovskite Nanocrystals

KAUST Repository

Zhang, Yuhai

2017-06-23

With record efficiencies achieved in lead halide perovskite-based photovoltaics, urgency has shifted toward finding alternative materials that are stable and less toxic. Bismuth-based perovskite materials are currently one of the most promising candidates among those alternatives. However, the band structures of these materials, including the nature of the bandgaps, remain elusive due to extremely low photoluminescence quantum yield (PLQY) and scattering issues in their thin-film form. Here, we reveal the specific nature of the material\\'s electronic transitions by realizing monodisperse colloidal nanocrystals (NCs) of hexagonal-phase Cs3Bi2X9 perovskites, which afford well-resolved PL features. Interestingly, the PL profile exhibits a dual-spectral feature at room temperature with comparable intensities, based on which we propose an exciton recombination process involving both indirect and direct transitions simultaneously-an observation further supported by temperature-dependent and density functional theory (DFT) calculations. Our findings provide experimental and theoretical insights into the nature of the bandgaps in bismuth halide materials-essential information for assessing their viability in solar cells and optoelectronics.

Novel bluish white-emitting CdBaP{sub 2}O{sub 7}:Eu{sup 2+} phosphor for near-UV white-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Derbel, Mouna [Laboratory of Industrial Chemistry, National School of Engineers of Sfax, University of Sfax, BPW 3038 Sfax (Tunisia); Mbarek, Aïcha, E-mail: mbarekaicha@yahoo.fr [Laboratory of Industrial Chemistry, National School of Engineers of Sfax, University of Sfax, BPW 3038 Sfax (Tunisia); Chadeyron, Geneviève [Clermont Université, ENSCCF, Institut de Chimie de Clermont-Ferrand, BP 10448, F-63000 Clermont-Ferrand (France); Clermont Université, Université Blaise Pascal, Institut de Chimie de Clermont-Ferrand, BP 10448, F-63000 Clermont-Ferrand (France); Fourati, Mohieddine [Laboratory of Industrial Chemistry, National School of Engineers of Sfax, University of Sfax, BPW 3038 Sfax (Tunisia); Zambon, Daniel [Clermont Université, Université Blaise Pascal, Institut de Chimie de Clermont-Ferrand, BP 10448, F-63000 Clermont-Ferrand (France); Mahiou, Rachid [Clermont Université, Université Blaise Pascal, Institut de Chimie de Clermont-Ferrand, BP 10448, F-63000 Clermont-Ferrand (France); CNRS, UMR 6296, ICCF, BP 80026, F-63171 Aubiere (France)

2016-08-15

A new bluish white-emitting phosphor based on a phosphate host matrix, CdBaP{sub 2}O{sub 7}:Eu{sup 2+}, was prepared by a conventional solid-state reaction method. The photoluminescence properties were investigated in both ultraviolet (UV) and vacuum ultraviolet (VUV) regions. The band-gaps of Eu-doped CdBaP{sub 2}O{sub 7} powders can be tuned in the ranges of 2.26–2 eV. The Eu{sup 2+}-doped CdBaP{sub 2}O{sub 7} phosphor was efficiently excited at wavelengths of 250–400 nm, which is suitable for the blue emission band for near-UV light-emitting-diode (LED) chips (360–400 nm) and red emission peaks up to 700 nm. CdBaP{sub 2}O{sub 7}:Eu{sup 2+} displays two different luminescence centers, which were suggested to Ba{sup 2+} and Cd{sup 2+} sites in the host. The dependence of luminescence intensity on temperatures was measured. The chromaticity coordinates and activation energy for thermal quenching were reported. The phosphor shows a good thermal stability on temperature quenching.

Small-bandgap semiconducting polymers with high near-infrared photoresponse

NARCIS (Netherlands)

Hendriks, K.H.; Li, W.; Wienk, M.M.; Janssen, R.A.J.

2014-01-01

Lowering the optical bandgap of conjugated polymers while maintaining a high efficiency for photoinduced charge transfer to suitable electron acceptors such as fullerene has remained a formidable challenge in the area of organic photovoltaics. Here we present the synthesis and application of a

Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

D' Costa, Vijay Richard, E-mail: vdcosta@asu.edu; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

2016-08-14

We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

β-Ga2O3:Cr(3+) nanoparticle: A new platform with near infrared photoluminescence for drug targeting delivery and bio-imaging simultaneously.

Science.gov (United States)

Wang, Xin-Shi; Situ, Jun-Qing; Ying, Xiao-Ying; Chen, Hui; Pan, Hua-fei; Jin, Yi; Du, Yong-Zhong

2015-08-01

Multifunctional nanoparticles which integrate the therapeutic agents and bio-imaging agents into one carrier are emerging as a promising therapeutic platform. Herein, GaOOH:Cr(3+) was firstly synthesized using improved hydrothermal method (atmospheric pressure, 95 °C), and by manipulating the pH of the reaction medium, GaOOH:Cr(3+) with different sizes (125.70 nm, 200.60 nm and 313.90 nm) were synthesized. Then β-Ga2O3:Cr(3+) nanoparticles with porous structures were developed as a result of the calcination of GaOOH:Cr(3+). The fabricated, porous β-Ga2O3:Cr(3+) nanoparticles could effectively absorb doxorubicin hydrochloride (DOX) (loading rate: 8% approximately) and had near infrared photoluminescence with a 695 nm emission. Furthermore, β-Ga2O3:Cr(3+) nanoparticles were coated with l-Cys modified hyaluronic acid (HA-Cys) by exploiting the electrostatic interaction and the cross-link effect of disulfide bond to improve the stability. The DOX loaded HA-Cys coated β-Ga2O3:Cr(3+) nanoparticles (HA/β-Ga2O3:Cr(3+)/DOX) showed an oxidation-reduction sensitive drug release behavior. The HA-Cys coated β-Ga2O3:Cr(3+) nanoparticles showed a low cytotoxicity on MCF-7 and Hela cell lines. The cellular uptake of HA/β-Ga2O3:Cr(3+)/DOX using the near infrared photoluminescence of β-Ga2O3:Cr(3+) nanoparticles and the fluorescence of DOX demonstrated the HA/β-Ga2O3:Cr(3+)/DOX could internalize into tumor cells quickly, which was affected by the size and shape of β-Ga2O3:Cr(3+)nanoparticles. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

From photoluminescence to thermal emission: Thermally-enhanced PL (TEPL) for efficient PV (Conference Presentation)

Science.gov (United States)

Manor, Assaf; Kruger, Nimrod; Martin, Leopoldo L.; Rotschild, Carmel

2016-09-01

The Shockley-Queisser efficiency limit of 40% for single-junction photovoltaic (PV) cells is mainly caused by the heat dissipation accompanying the process of electro-chemical potential generation. Concepts such as solar thermo-photovoltaics (STPV) aim to harvest this heat loss by the use of a primary absorber which acts as a mediator between the sun and the PV, spectrally shaping the light impinging on the cell. However, this approach is challenging to realize due to the high operating temperatures of above 2000K required in order to generate high thermal emission fluxes. After over thirty years of STPV research, the record conversion efficiency for STPV device stands at 3.2% for 1285K operating temperature. In contrast, we recently demonstrated how thermally-enhanced photoluminescence (TEPL) is an optical heat-pump, in which photoluminescence is thermally blue-shifted upon heating while the number of emitted photons is conserved. This process generates energetic photon-rates which are comparable to thermal emission in significantly reduced temperatures, opening the way for a TEPL based energy converter. In such a device, a photoluminescent low bandgap absorber replaces the STPV thermal absorber. The thermalization heat induces a temperature rise and a blue-shifted emission, which is efficiently harvested by a higher bandgap PV. We show that such an approach can yield ideal efficiencies of 70% at 1140K, and realistic efficiencies of almost 50% at moderate concentration levels. As an experimental proof-of-concept, we demonstrate 1.4% efficient TEPL energy conversion of an Nd3+ system coupled to a GaAs cell, at 600K.

Micromachined millimeter-wave photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

1994-01-01

We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

Effects of post heat treatment on near infrared photoluminescence of YAG:Yb{sup 3+} nanoparticles synthesized by glycothermal method

Energy Technology Data Exchange (ETDEWEB)

Asakura, Ryo; Isobe, Tetsuhiko, E-mail: isobe@applc.keio.ac.jp

2014-02-15

Influence of post heat treatment on particulate, structural, surface, and optical properties of YAG:Yb{sup 3+} nanoparticles prepared by glycothermal method is studied to understand factors for determining photoluminescence intensity. Characterization is performed on electron microscopy, X-ray diffractometry, infrared absorption spectroscopy, and optical measurements. Near infrared emission under 940 nm near infrared excitation is observed at 1029 nm corresponding to {sup 2}F{sub 5/2}→{sup 2}F{sub 7/2} transition of Yb{sup 3+}. Subsequent heat treatment causes crystallite growth and elimination of hydroxyl groups, resulting in an enhancement of the near infrared emission. -- Highlights: • YAG:Yb{sup 3+} nanoparticles of ca. 10 nm are prepared by glycothermal method at 300 °C. • 1029 nm near infrared emission takes place under 940 nm near infrared excitation. • Emission and excitation correspond to {sup 2}F{sub 5/2}→{sup 2}F{sub 7/2} transition of Yb{sup 3+}. • Subsequent heat treatment causes crystallite growth and elimination of hydroxyl groups, resulting in enhancement of near infrared emission.

Synthesis, structure and photoluminescence of (PLAGH)2[ZnCl4] and comparative analysis of photoluminescence properties with tris(2,2′-bipyridine)ruthenium(II)

International Nuclear Information System (INIS)

Radanović, Mirjana M.; Jelić, Miodrag G.; Romčević, Nebojša Ž.; Boukos, Nikos; Vojinović-Ješić, Ljiljana S.; Leovac, Vukadin M.; Hadžić, Branka B.; Bajac, Branimir M.; Nađ, Laslo F.; Chandrinou, Chrysoula; Baloš, Sebastian S.

2015-01-01

Highlights: • New zinc(II) complex with pyridoxalaminoguanidine was synthesized. • The enhancement of the photoluminescence due to the compound formation was achieved. • Very high photoluminescence of Zn(II) compound was noticed. • Comparative analysis of photoluminescence with tris(2,2′-bipyridine) ruthenium(II) was provided. - Abstract: The first compound of zinc(II) containing pyridoxalaminoguanidine has been synthesized and characterized by elemental analysis, infrared spectra, conductometric measurements and X-ray crystallography. Single crystals of the compound were obtained in the reaction of methanolic solution of zinc(II) chloride and pyridoxalaminoguanidine hydrochloride. In this compound the coordination of chelate ligand is absent and tetrachlorido complex of zinc(II) with pyridoxalaminuguanidinium cation as contraion is obtained. Photoluminescence spectra were measured. Lorentzian multipeak technique was used to determine peak wavelengths and their intensities. Photoluminescence spectroscopy upon 325, 488 and 514 nm laser excitation light was used to obtain results. This novel compound of zinc(II) was compared to the well-known organic light emitting diode material—ruthenium(II) complex with bypiridine i.e., tris(2,2′-bipyridine)ruthenium(II), under the same circumstances and the identical experimental setup. A scheme of energy levels and transitions is proposed to explain the obtained experimental results

Lanthanide-organic frameworks constructed from multi-functional ligands: Syntheses, structures, near-infrared and visible photoluminescence properties

International Nuclear Information System (INIS)

Li Xinfa; Xie Zailai; Lin Jingxiang; Cao Rong

2009-01-01

A series of multi-functional ligands supported lanthanide-organic frameworks, formulated as [Ln(HL 1 )(H 2 L 2 ) 0.5 (H 4 L 2 ) 0.5 (H 2 O)].(H 2 O) 1.5 .{Ln=La (1), Pr (2), Nd (3), Sm (4), Eu (5); H 3 L 1 =5-Sulfosaclicylic acid; H 4 L 2 =N,N'-piperazine (bis-methylene phosphonic acid)}, have been synthesized by hydrothermal reactions. Single crystal X-ray diffractions and powder XRD patterns confirm they are isostructural. They feature 3D framework structures based on extension of a 'zigzag' inorganic chain by organic linkers. Moreover, the photoluminescence properties of 5 and 3 have been investigated, and they show strong solid-state emissions in the visible and near-infrared (IR) regions at room temperature. - Graphical abstract: Five multi-functional ligands supported 3D lanthanide-organic frameworks have been synthesized and structurally characterized. Compounds 5 and 3 displayed strong solid-state emissions in the visible and near-infrared region at room temperature.

Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials

Energy Technology Data Exchange (ETDEWEB)

Szabo, Nadine; Sagol, B. Erol; Seidel, Ulf; Schwarzburg, Klaus; Hannappel, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2010-07-01

III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV)/InGaAs (0.73 eV) are presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double heterostructure (DHS).

Photoluminescence properties of Eu2+-activated Ca2Y2Si2O9 phosphor

NARCIS (Netherlands)

Zhang, Zhijun; Delsing, A.C.A.; Notten, P.H.L.; Zhao, Jingtai; Hintzen, H.T.J.M.

2012-01-01

Eu2+-activated Ca2Y2Si2O9 phosphors with different Eu2+ concentrations have been prepared by a solid-state reaction method at high temperature and their photoluminescence (PL) properties were investigated. Photoluminescence results show that Eu2+-doped Ca2Y2Si2O9 can be efficiently excited by

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Time-resolved ultraviolet near-field scanning optical microscope for characterizing photoluminescence lifetime of light-emitting devices.

Science.gov (United States)

Park, Kyoung-Duck; Jeong, Hyun; Kim, Yong Hwan; Yim, Sang-Youp; Lee, Hong Seok; Suh, Eun-Kyung; Jeong, Mun Seok

2013-03-01

We developed a instrument consisting of an ultraviolet (UV) near-field scanning optical microscope (NSOM) combined with time-correlated single photon counting, which allows efficient observation of temporal dynamics of near-field photoluminescence (PL) down to the sub-wavelength scale. The developed time-resolved UV NSOM system showed a spatial resolution of 110 nm and a temporal resolution of 130 ps in the optical signal. The proposed microscope system was successfully demonstrated by characterizing the near-field PL lifetime of InGaN/GaN multiple quantum wells.

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

Science.gov (United States)

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Directory of Open Access Journals (Sweden)

Luigi Sirleto

2010-11-01

Full Text Available Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

Science.gov (United States)

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

2017-10-01

InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

Synthesis and photoluminescence study of rare earth activated phosphor Na2La2B2O7

International Nuclear Information System (INIS)

Nagpure, P.A.; Omanwar, S.K.

2012-01-01

The photoluminescence properties in UV and N-UV excitable range for the phosphors of Na 2 La 2 B 2 O 7 : RE (RE=Eu, Tb, Ce, Sm, Gd) are investigated. The solution combustion synthesis technique was employed for the synthesis of the phosphors Na 2 La 2 B 2 O 7 : RE. The photoluminescence measurements of the phosphors were carried out on a HITACHI F7000 Fluorescence Spectrophotometer. The PL and PL excitation (PLE) spectra indicate that the main emission wavelength of Na 2 La 2 B 2 O 7 : Eu are 591 and 615 nm, Na 2 La 2 B 2 O 7 : Ce shows dominating emission peak at 387 nm and Na 2 La 2 B 2 O 7 : Tb displays green emission at 493, 544, 593 and 620 nm at 254 nm excitation, while Na 2 La 2 B 2 O 7 : Sm shows the main emission peak wavelengths 566 and 604 nm at 405 nm excitation and Na 2 La 2 B 2 O 7 : Gd shows dominating emission peak at 312 nm at 274 nm excitation. These phosphors may provide a new kind of luminescent materials under ultraviolet and near ultraviolet excitation for various applications. - Highlights: ► We use the combustion technique for synthesis of Na 2 La 2 B 2 O 7 : RE phosphor. ► Phosphor Na 2 La 2 B 2 O 7 : Eu 3+ shows intense red emission under UV excitation. ► Phosphor Na 2 La 2 B 2 O 7 : Tb 3+ shows intense green emission under UV excitation. ► Phosphor Na 2 La 2 B 2 O 7 : Sm 3+ shows orange red emission under near UV excitation. ► Phosphors Na 2 La 2 B 2 O 7 : Ce 3+ and Na 2 La 2 B 2 O 7 : Gd 3+ show near UV and UVB emissions under UV excitation.

Analysis of phononic bandgap structures with dissipation

DEFF Research Database (Denmark)

Andreassen, Erik; Jensen, Jakob Søndergaard

2013-01-01

and longer wavelengths, we show that the two formulations produce nearly identical results in terms of propagation constant and wave decay. We use the k(ω)-formulation to compute loss factors with dissipative bandgap materials for steady-state wave propagation and create simplified diagrams that unify...... the spatial loss factor from dissipative and bandgap effects. Additionally, we demonstrate the applicability of the k(ω)-formulation for the computation of the band diagram for viscoelastic composites and compare the computed loss factors for low frequency wave propagation to existing results based on quasi...

Opto-electronic characterization of polycrystalline CuInS{sub 2} and Cu(In,Ga)S{sub 2} absorber layers by photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Heidemann, Florian

2011-09-29

Photoluminescence (PL) is an established method to characterize the optoelectronic properties of solar cell absorber layers. With the help of Planck's generalized law it is in principle possible to determine the quasi-Fermi level splitting - which is the upper limit of the open circuit voltage V{sub oc} - and the absorption coefficient of a solar cell before its actual completion. For large-scale measurements (mm/cm regime) this is valid for absorber layers with lateral homogeneous properties, however it is not directly transferable to polycrystalline semiconductors due to laterally fluctuating opto-electronic and structural parameters. The lateral fluctuations in opto-electronic properties of polycrystalline Cu(In{sub 1-{xi}}Ga{sub {xi}})S{sub 2} have been analyzed (e.g. with respect to fluctuations in quasi-Fermi level splitting, optical band-gap and sub band-gap absorbance) by measuring laterally and spectrally resolved PL on the {mu}m-scale and providing the transition towards macroscopic PL measurements on the mm-scale. To give a comprehensive characterization, surface roughness and optical properties have been studied and methods for feature extraction have been applied. On the microscopic scale variations in the quasi-Fermi level splitting {delta}{sub x,y}E{sub Fnp} of about 38 meV (CuInS{sub 2}) and 53 meV (Cu(In,Ga)S{sub 2}) have been found. From local absorbance spectra extracted from PL measurements on Cu(In,Ga)S{sub 2} fluctuations in the optical band-gap E{sub opt} with a full width at half maximum of FWHM{sub E{sub opt}}{approx}80 meV could be extracted, whereas band-gap fluctuations in CuInS{sub 2} are found to be negligible. Thus band-gap fluctuations seem to be mainly caused by a varying gallium (Ga) content. Furthermore, regions with higher E{sub opt} and with it a potential higher Ga content, show a higher quasi-Fermi level splitting. As a major limiting factor for the local quasi-Fermi level splitting E{sub Fnp} the local density of deep

Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

Science.gov (United States)

Sun, Q. M.; Melnikov, A.; Mandelis, A.

2015-06-01

Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

Synthesis, structure and photoluminescence of (PLAGH){sub 2}[ZnCl{sub 4}] and comparative analysis of photoluminescence properties with tris(2,2′-bipyridine)ruthenium(II)

Energy Technology Data Exchange (ETDEWEB)

Radanović, Mirjana M. [University of Novi Sad, Faculty of Sciences, Novi Sad (Serbia); Jelić, Miodrag G., E-mail: jelicmgm@uns.ac.rs [University of Novi Sad, Faculty of Technical Sciences, Novi Sad (Serbia); Romčević, Nebojša Ž. [University of Belgrade, Institute of Physics, Belgrade (Serbia); Boukos, Nikos [National Centre for Scientific Research “Demokritos”, Institute of Materials Science, Athens (Greece); Vojinović-Ješić, Ljiljana S.; Leovac, Vukadin M. [University of Novi Sad, Faculty of Sciences, Novi Sad (Serbia); Hadžić, Branka B. [University of Belgrade, Institute of Physics, Belgrade (Serbia); Bajac, Branimir M. [University of Novi Sad, Faculty of Technology, Novi Sad (Serbia); Nađ, Laslo F. [University of Novi Sad, Faculty of Technical Sciences, Novi Sad (Serbia); Chandrinou, Chrysoula [National Centre for Scientific Research “Demokritos”, Institute of Materials Science, Athens (Greece); Baloš, Sebastian S. [University of Novi Sad, Faculty of Technical Sciences, Novi Sad (Serbia)

2015-10-15

Highlights: • New zinc(II) complex with pyridoxalaminoguanidine was synthesized. • The enhancement of the photoluminescence due to the compound formation was achieved. • Very high photoluminescence of Zn(II) compound was noticed. • Comparative analysis of photoluminescence with tris(2,2′-bipyridine) ruthenium(II) was provided. - Abstract: The first compound of zinc(II) containing pyridoxalaminoguanidine has been synthesized and characterized by elemental analysis, infrared spectra, conductometric measurements and X-ray crystallography. Single crystals of the compound were obtained in the reaction of methanolic solution of zinc(II) chloride and pyridoxalaminoguanidine hydrochloride. In this compound the coordination of chelate ligand is absent and tetrachlorido complex of zinc(II) with pyridoxalaminuguanidinium cation as contraion is obtained. Photoluminescence spectra were measured. Lorentzian multipeak technique was used to determine peak wavelengths and their intensities. Photoluminescence spectroscopy upon 325, 488 and 514 nm laser excitation light was used to obtain results. This novel compound of zinc(II) was compared to the well-known organic light emitting diode material—ruthenium(II) complex with bypiridine i.e., tris(2,2′-bipyridine)ruthenium(II), under the same circumstances and the identical experimental setup. A scheme of energy levels and transitions is proposed to explain the obtained experimental results.

Coupled-resonator-induced plasmonic bandgaps.

Science.gov (United States)

Wang, Yujia; Sun, Chengwei; Gong, Qihuang; Chen, Jianjun

2017-10-15

By drawing an analogy with the conventional photonic crystals, the plasmonic bandgaps have mainly employed the periodic metallic structures, named as plasmonic crystals. However, the sizes of the plasmonic crystals are much larger than the wavelengths, and the large sizes considerably decrease the density of the photonic integration circuits. Here, based on the coupled-resonator effect, the plasmonic bandgaps are experimentally realized in the subwavelength waveguide-resonator structure, which considerably decreases the structure size to subwavelength scales. An analytic model and the phase analysis are established to explain this phenomenon. Both the experiment and simulation show that the plasmonic bandgap structure has large fabrication tolerances (>20%). Instead of the periodic metallic structures in the bulky plasmonic crystals, the utilization of the subwavelength plasmonic waveguide-resonator structure not only significantly shrinks the bandgap structure to be about λ 2 /13, but also expands the physics of the plasmonic bandgaps. The subwavelength dimension, together with the waveguide configuration and robust realization, makes the bandgap structure easy to be highly integrated on chips.

Photoluminescent properties of Sr2CeO4: Eu3+ and Sr2CeO4: Eu2+ phosphors suitable for near ultraviolet excitation

International Nuclear Information System (INIS)

Suresh, K.; Poornachandra Rao, N.V.; Murthy, K.V.R.

2014-01-01

Powder phosphors of 1 mol% Eu 3+ - and Eu 2+ -doped strontium cerium oxide (Sr 2 CeO 4 ) were synthesized by standard solid-state reaction method. Eu 3+ - and Eu 2+ -doped Sr 2 CeO 4 phosphors fired at 1100 ℃ for 2 h were analysed by X-ray diffraction (XRD) and photoluminescence (PL) techniques. The XRD patterns confirm that the obtained phosphors are a single phase of Sr 2 CeO 4 composed of orthorhombic structure. Room temperature PL excitation spectrum of air-heated Sr 2 CeO 4 : Eu phosphor has exhibited bands at 260, 280 and 350 nm. Whereas the excitation spectrum of Sr 2 CeO 4 : Eu phosphor heated under reducing (carbon) atmosphere exhibited single broadband range from 260 to 390 nm. The (PL) emission peaks of both the phosphors at 467 (blue), 537 (green) and 616 nm (red) generate white light under 260, 280 and 350 nm excitation wavelengths. The Commission International de l'Eclairage (CIE) colour coordinates conforms that these phosphors emitting white light. The results reveal that these phosphors are multifunctional phosphors which emit white light under these excitations that they could be used as white components for display and lamp devices and as well as possible good light-conversion phosphor LEDs under near-ultraviolet (nUV) chip. (author)

Optimized photoluminescence of SrB 2O 4:Eu 3+ red-emitting phosphor by charge compensation

Science.gov (United States)

Zhao, Lai-Shi; Liu, Jie; Wu, Zhan-Chao; Kuang, Shao-Ping

2012-02-01

A novel red-emitting phosphor, SrB 2O 4:Eu 3+, was synthesized by high temperature solid-state reaction and its photoluminescence properties were studied. The emission spectrum consists of four major emission bands. The emission peaks are located at 593, 612, 650 and 703 nm, corresponding to the 5D0 → 7F1, 5D0 → 7F2, 5D0 → 7F3 and 5D0 → 7F4 typical transitions of Eu 3+, respectively. The effects of Eu 3+ doping content and charge compensators (Li +, Na +, K +) on photoluminescence of SrB 2O 4:Eu 3+ phosphor were studied. The results show that the emission intensity can be affected by above factors and Na + is the optimal charge compensator for SrB 2O 4:Eu 3+. The photoluminescence of NaSrB 2O 4:Eu 3+ was compared with that of Y 2O 2S:Eu 3+. It implies that SrB 2O 4:Eu 3+ is a good candidate as a red-emitting phosphor pumped by near-ultraviolet (NUV) InGaN chip for fabricating white light-emitting diodes (WLEDs).

Practical considerations for solar energy thermally enhanced photo-luminescence (TEPL) (Conference Presentation)

Science.gov (United States)

Kruger, Nimrod; Manor, Assaf; Kurtulik, Matej; Sabapathy, Tamilarasan; Rotschild, Carmel

2017-04-01

While single-junction photovoltaics (PV's) are considered limited in conversion efficiency according to the Shockley-Queisser limit, concepts such as solar thermo-photovoltaics aim to harness lost heat and overcome this barrier. We claim the novel concept of Thermally Enhanced Photoluminescence (TEPL) as an easier route to achieve this goal. Here we present a practical TEPL device where a thermally insulated photo-luminescent (PL) absorber, acts as a mediator between a photovoltaic cell and the sun. This high temperature absorber emits blue-shifted PL at constant flux, then coupled to a high band gap PV cell. This scheme promotes PV conversion efficiencies, under ideal conditions, higher than 62% at temperatures lower than 1300K. Moreover, for a PV and absorber band-gaps of 1.45eV (GaAs PV's) and 1.1eV respectively, under practical conditions, solar concentration of 1000 suns, and moderate thermal insulation; the conversion efficiencies potentially exceed 46%. Some of these practical conditions belong to the realm of optical design; including high photon recycling (PR) and absorber external quantum efficiency (EQE). High EQE values, a product of the internal QE of the active PL materials and the extraction efficiency of each photon (determined by the absorber geometry and interfaces), have successfully been reached by experts in laser cooling technology. PR is the part of emitted low energy photons (in relation to the PV band-gap) that are reabsorbed and consequently reemitted with above band-gap energies. PV back-reflector reflectivity, also successfully achieved by those who design the cutting edge high efficiency PV cells, plays a major role here.

The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption

International Nuclear Information System (INIS)

Wang Tao; Guo Qing; Liu Yan; Wang Wen-Bo; Sheng Kuang; Ao Zhi-Min; Yu Bin

2011-01-01

The atomic and electronic structures of AB-stacking bilayer graphene (BLG) in the presence of H 2 O molecules are investigated by density functional theory calculations. For free-standing BLG, the bandgap is opened to 0.101 eV with a single H 2 O molecule adsorbed on its surface. The perfectly suspended BLG is sensitive to H 2 O adsorbates, which break the BLG lattice symmetry and open an energy gap. While a single H 2 O molecule is adsorbed on the BLG surface with a SiO 2 substrate, the bandgap widens to 0.363 eV. Both the H 2 O molecule adsorption and the oxide substrate contribute to the BLG bandgap opening. The phenomenon is interpreted with the charge transfer process in 2D carbon nanostructures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Structural, spectroscopic and photoluminescence studies of LiEu(WO4)2-x (MoO4) x as a near-UV convertible phosphor

International Nuclear Information System (INIS)

Chiu, C.-H.; Wang, M.-F.; Lee, C.-S.; Chen, T.-M.

2007-01-01

A series of lithium europium double tungsto-molybdate phosphors LiEu(WO 4 ) 2- x (MoO 4 ) x (x=0, 0.4, 0.8, 1.2, 1.6, 2.0) have been synthesized by solid-state reactions and their crystal structure, optical and luminescent properties were studied. As the molybdate content increases, the intensity of the 5 D 0 →7 F 2 emission of Eu 3+ activated at wavelength of 396 nm was found to increase and reach a maximum when the relative ratio of Mo/W is 2:0. These changes were found to be accompanied with the changes in the spectral feature, which can be attributed to the crystal field splitting of the 5 D 0 →7 F 2 transition. As the molybdate content increases the emission intensity of the 615 nm peak also increases. The intense red-emission of the tungstomolybdate phosphors under near-UV excitation suggests them to be potential candidate for white light generation by using near-UV LEDs. In this study the effect of chemical compositions and crystal structure on the photoluminescent properties of LiEu(WO 4 ) 2- x (MoO 4 ) x is investigated and discussed. - Graphical abstract: As shown by the PL spectra of LiEu(WO 4 ) 2- x (MoO 4 ) x (x=0, 0.4, 0.8, 1.2, 1.6, 2.0) under 394 nm near-UV excitation, the intensity of 5 D 0 →7 F 2 transition was found to increase with the increasing x and the I-λ curve reaches a maximum when the relative ratio of Mo/W is 2:0

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI2 semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (T L )-dependent PL emission intensity (I PL ) excited with different excitation power density (P) was measured. The PL emissions showed characteristics I PL with their maxima at around 520 nm. The I PL might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum I PL on P for all the crystal temperature T L . The I PL was found to increase with decreasing T L . The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

2011-07-15

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Resonance fluorescence spectrum in a two-band photonic bandgap crystal

Science.gov (United States)

Lee, Ray-Kuang; Lai, Yinchieh

2003-05-01

Steady state resonance fluorescence spectra from a two-level atom embedded in a photonic bandgap crystal and resonantly driven by a classical pump light are calculated. The photonic crystal is considered to be with a small bandgap which is in the order of magnitude of the Rabi frequency and is modeled by the anisotropic two-band dispersion relation. Non-Markovian noises caused by the non-uniform distribution of photon density states near the photonic bandgap are taken into account by a new approach which linearizes the optical Bloch equations by using the Liouville operator expansion. Fluorescence spectra that only exhibit sidebands of the Mollow triplet are found, indicating that there is no coherent Rayleigh scattering process.

METHOD OF NON-CONTACT PHOTOLUMINESCENT DIAGNOSTICS OF THE EYE FIBROUS TUNIC CONDITION

Directory of Open Access Journals (Sweden)

S. Yu. Petrov

2018-01-01

Full Text Available Non-contact optical diagnostics of structural disorders of the eye has a number of advantages: high speed, accuracy and a large range of parameters available for analysis. The paper presents the results of studies of the photoluminescence of the fibrous tunic of the eye, excited by polarized light, depending on the intraocular pressure. In the experiments, isolated de-epithelized eyes of the rabbit were used, inside of which pressure up to 50 mm Hg was artificially created. Under these conditions, the cornea and sclera were illuminated with linearly polarized light at wavelengths of 250, 350 and 450 nm, exciting photoluminescence in the wavelength range up to 700 nm. Cross and co-polarized photoluminescence spectra excited by linearly polarized light were obtained. It has been established that, when excited by polarized light, the photoluminescence of the cornea is partially polarized. Depending on the wavelength of the photoluminescence, the degree of polarization varies from 0.2 to 0.35. It is shown that the degree of polarization of the photoluminescence of the cornea of the eye upon excitation by linearly polarized light can be used as a measurable parameter for assessing the physiological state of the eye. It is shown that the photoluminescence spectrum consists of two bands with maxima near 460-470 and 430-440 nm. These bands are assigned, respectively, to pyridinnucleotides and glycosylated collagen. A significant contribution can be made by the epithelium of the eye, which contains riboflavin with characteristic absorption bands near 450 and 365 nm. When excited at 450 nm, the photoluminescence maximum is located near 540 nm, which corresponds to the spectrum of fluorophores in the endothelium and epithelium. The spectrum of photoluminescence upon excitation at a wavelength of 250 nm can be attributed to tryptophan located in the intraocular lens.

Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

Chitosan/ZnAl_2O_4 films: structural evaluation and photoluminescent

International Nuclear Information System (INIS)

Araujo, P.M.A.G.; Costa, A.C.F.M.

2014-01-01

The photoluminescent materials have been the focus of intense research and applications in optics, electronics and biological areas. This work reports obtaining chitosan/ZnAl_2O_4 film in proportions of 1: 1, 1: 2, 1: 3, 1:4 to 1:5 by weight, and assess the structural properties of the films and photoluminescence. The samples were characterized by XRD, FTIR, emission and excitation. By XRD was found that all samples showed characteristic peaks of chitosan and ZnAl_2O_4. The FTIR spectra for all concentrations of Qs/NPs films exhibit characteristic bands of Qs and trend banding of ions ZnAl_2O_4. The emission and excitation spectra revealed the presence of a broadband processes associated with charge transfer to the Al"3"+ O"2"-, all samples showed good photoluminescent properties being that higher intensities of photoluminescence gave to the film concentration 1:4 being promising for photoelectronic applications. (author)

Synthesis of blue photoluminescent WS2 quantum dots via ultrasonic cavitation

International Nuclear Information System (INIS)

Bayat, A.; Saievar-Iranizad, E.

2017-01-01

Blue photoluminescent WS 2 quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS 2 flakes to its quantum dots. The as synthesized WS 2 QDs showed blue photoluminescence upon UV excitation. The synthesized WS 2 QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS 2 QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS 2 quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS 2 was increased with formation of its quantum dots. •Solution of WS 2 QDs was stable after 6 months.

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

KAUST Repository

Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

2014-01-01

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs

Energy transfer and visible-infrared quantum cutting photoluminescence modification in Tm-Yb codoped YPO(4) inverse opal photonic crystals.

Science.gov (United States)

Wang, Siqin; Qiu, Jianbei; Wang, Qi; Zhou, Dacheng; Yang, Zhengwen

2015-08-01

YPO4:  Tm, Yb inverse opal photonic crystals were successfully synthesized by the colloidal crystal templates method, and the visible-infrared quantum cutting (QC) photoluminescence properties of YPO4:  Tm, Yb inverse opal photonic crystals were investigated. We obtained tetragonal phase YPO4 in all the samples when the samples sintered at 950°C for 5 h. The visible emission intensity of Tm3+ decreased significantly when the photonic bandgap was located at 650 nm under 480 nm excitation. On the contrary, the QC emission intensity of Yb3+ was enhanced as compared with the no photonic bandgap sample. When the photonic bandgap was located at 480 nm, the Yb3+ and Tm3+ light-emitting intensity weakened at the same time. We demonstrated that the energy transfer between Tm3+ and Yb3+ is enhanced by the suppression of the red emission of Tm3+. Additionally, the mechanisms for the influence of the photonic bandgap on the energy transfer process of the Tm3+, Yb3+ codoped YPO4 inverse opal are discussed.

Photoluminescence of anti-modulation doped near-surface GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

CERN Document Server

Bumaj, Y A; Goldkhan, R; Shtajn, N; Golombek, A; Nakov, V; Cheng, T S

2002-01-01

The anti-modulation Si-doped GaAs/AlGaAs structures with near-surface single quantum wells grown by molecular-beam epitaxy were exposed to hydrogen plasma at 260 deg C and investigated by low-temperature photoluminescence, photoluminescence excitation and photoreflectance spectroscopy. After hydrogenation, the quenching of the exciton luminescence for the below AlGaAs band gap excitation due to the increase of electric field in the structure has been observed. The effect is consistent with unpinning of Fermi level from mid gap of nominally undoped (p-type) GaAs cap layer due to passivation of surface states by hydrogen without neutralization of shallow impurities in the epilayers

Photoluminescence as a tool for characterizing point defects in semiconductors

Science.gov (United States)

Reshchikov, Michael

2012-02-01

Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI{sub 2} semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.a [Qeensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)

2009-12-14

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (T{sub L})-dependent PL emission intensity (I{sub PL}) excited with different excitation power density (P) was measured. The PL emissions showed characteristics I{sub PL} with their maxima at around 520 nm. The I{sub PL} might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum I{sub PL} on P for all the crystal temperature T{sub L}. The I{sub PL} was found to increase with decreasing T{sub L}. The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.

GW quasiparticle bandgaps of anatase TiO2 starting from DFT + U.

Science.gov (United States)

Patrick, Christopher E; Giustino, Feliciano

2012-05-23

We investigate the quasiparticle band structure of anatase TiO(2), a wide gap semiconductor widely employed in photovoltaics and photocatalysis. We obtain GW quasiparticle energies starting from density-functional theory (DFT) calculations including Hubbard U corrections. Using a simple iterative procedure we determine the value of the Hubbard parameter yielding a vanishing quasiparticle correction to the fundamental bandgap of anatase TiO(2). The bandgap (3.3 eV) calculated using this optimal Hubbard parameter is smaller than the value obtained by applying many-body perturbation theory to standard DFT eigenstates and eigenvalues (3.7 eV). We extend our analysis to the rutile polymorph of TiO(2) and reach similar conclusions. Our work highlights the role of the starting non-interacting Hamiltonian in the calculation of GW quasiparticle energies in TiO(2) and suggests an optimal Hubbard parameter for future calculations.

Sol-gel synthesis, structure and photoluminescence properties of nanocrystalline Lu{sub 2}MoO{sub 6}:Eu

Energy Technology Data Exchange (ETDEWEB)

Li, Huaiyong; Yang, Hyun Kyoung [Department of Physics, Pukyong National University, 599-1 Nam-Gu, Daeyeon 3 Dong, Busan 608-737 (Korea, Republic of); Jeong, Jung Hyun, E-mail: jhjeong@pknu.ac.kr [Department of Physics, Pukyong National University, 599-1 Nam-Gu, Daeyeon 3 Dong, Busan 608-737 (Korea, Republic of); Jang, Kiwan; Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo [Department of Electronic Material Engineering, Silla University, Busan 617-736 (Korea, Republic of)

2011-09-15

Highlights: {yields} Monoclinic-structural Lu{sub 2}MoO{sub 6} has strong absorption of near-UV light. {yields} The absorbed energy can be transferred from MoO{sub 5} groups to doped Eu{sup 3+} and luminescence. {yields} The absorption edge and the peak of the MoO{sub 5} excitation band shift in reverse ways. {yields} The decline of the crystallinity and the introduced defect respond for the variation. -- Abstract: In this paper, we reported the obtention of Eu{sup 3+} ion doped Lu{sub 2}MoO{sub 6} powders synthesized by a sol-gel method, and followed by annealing at different temperatures. The structure and photoluminescence properties of these powders were investigated. The X-ray diffraction pattern suggests that Lu{sub 2}MoO{sub 6} powder has a monoclinic structure. It was observed that the UV-visible and photoluminescence spectra of Lu{sub 2}MoO{sub 6}:Eu nanocrystallines varied systematically with the calcination temperature. The near-UV absorption edge shifts to long wavelength direction with the decreasing of the calcination temperature, while the peak of MoO{sub 5} excitation band shifts in an opposite way. The decline of the crystallinity and the introduced lattice defect were considered to respond for these variations. Additionally, due to the efficient red light emission under near-UV light excitation, the powder can be a candidate as red phosphor for white-light-emitting diodes.

Luminescent Properties of Surface Functionalized BaTiO₃ Embedded in Poly(methyl methacrylate).

Science.gov (United States)

Requena, Sebastian; Lacoul, Srijan; Strzhemechny, Yuri M

2014-01-16

As-received BaTiO₃ nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyl)triethoxysilane (APTES) and mixed with poly(methyl methacrylate)/toluene solution. The nanocomposite solution was spin coated on Si substrates to form thin films. The photoluminescence spectrum of the pure powder was composed of a bandgap emission at 3.0 eV and multiple bands centered about 2.5 eV. Surface functionalization of the BaTiO₃ powder via APTES increases overall luminescence at room temperature while only enhancing bandgap emission at low-temperature. Polymer coating of the functionalized nanoparticles significantly enhances bandgap emissions while decreasing emissions associated with near-surface lattice distortions at 2.5 eV.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

Correlation between surface modification and photoluminescence properties of β-Ga2O3 nanostructures

Directory of Open Access Journals (Sweden)

R. Jangir

2016-03-01

Full Text Available In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy. Photoluminescence spectra for all the samples of β-Ga2O3 nanostructures exhibit an UV and blue emission band. The relative intensity of UV and blue luminescence is strongly affected by the surface defects present on the nanostructures. Our study shows that Photoluminescence intensity of UV and blue luminescence can be reliably used to determine the quality of β-Ga2O3 nanostructures. Further the work opens up the possibility of using UV excitation and subsequent Photoluminescence analysis as a possible means for oxygen sensing. The Photoluminescence mechanism in β-Ga2O3 nanostructures is also discussed.

Synthesis and characterization of a new photoluminescent material (8-hydroxy quinoline) bis (2-2'bipyridine) lanthanum La(Bpy)2q

Science.gov (United States)

Kumar, Rahul; Bhargava, Parag

2016-05-01

A new photoluminescence material, (8-hydroxy quinoline) bis (2-2'bipyridine) lanthanum has been synthesized and characterized by different techniques. The prepared material La(Bpy)2q was characterized for structural, thermal and photoluminescence analysis. Structural analysis of this material was done by Fourier transformed infrared spectroscopy (FTIR) and mass spectroscopy. Thermal analysis of this material was done by thermal gravimetric analysis (TGA) shows the thermal stability up to 190°C.Absorption and emission spectra of the material was measured by UV-visible spectroscopy and photoluminescence spectroscopy. Solution of this material La(Bpy)2q in ethanol showed absorption peak at 385nm, which may be attributed due to (π - π*) transitions. The photoluminescence spectra of La(Bpy)2q in ethanol solution showed intense peak at 490 nm

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

Science.gov (United States)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

2018-04-01

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Synthesis of blue photoluminescent WS{sub 2} quantum dots via ultrasonic cavitation

Energy Technology Data Exchange (ETDEWEB)

Bayat, A.; Saievar-Iranizad, E., E-mail: saievare@modares.ac.ir

2017-05-15

Blue photoluminescent WS{sub 2} quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS{sub 2} flakes to its quantum dots. The as synthesized WS{sub 2} QDs showed blue photoluminescence upon UV excitation. The synthesized WS{sub 2} QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS{sub 2} QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS{sub 2} quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS{sub 2} was increased with formation of its quantum dots. •Solution of WS{sub 2} QDs was stable after 6 months.

Photonic Bandgap (PBG) Shielding Technology

Science.gov (United States)

Bastin, Gary L.

2007-01-01

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Efficient H2 production over Au/graphene/TiO2 induced by surface plasmon resonance of Au and band-gap excitation of TiO2

International Nuclear Information System (INIS)

Liu, Yang; Yu, Hongtao; Wang, Hua; Chen, Shuo; Quan, Xie

2014-01-01

Highlights: • Both surface plasmon resonance and band-gap excitation were used for H 2 production. • Au/Gr/TiO 2 composite photocatalyst was synthesized. • Au/Gr/TiO 2 exhibited enhancement of light absorption and charge separation. • H 2 production rate of Au/Gr/TiO 2 was about 2 times as high as that of Au/TiO 2 . - Abstract: H 2 production over Au/Gr/TiO 2 composite photocatalyst induced by surface plasmon resonance of Au and band-gap excitation of TiO 2 using graphene (Gr) as an electron acceptor has been investigated. Electron paramagnetic resonance study indicated that, in this composite, Gr collected electrons not only from Au with surface plasmon resonance but also from TiO 2 with band-gap excitation. Surface photovoltage and UV–vis absorption measurements revealed that compared with Au/TiO 2 , Au/Gr/TiO 2 displayed more effective photogenerated charge separation and higher optical absorption. Benefiting from these advantages, the H 2 production rate of Au/Gr/TiO 2 composite with Gr content of 1.0 wt% and Au content of 2.0 wt% was about 2 times as high as that of Au/TiO 2 . This work represents an important step toward the efficient application of both surface plasmon resonance and band-gap excitation on the way to converting solar light into chemical energy

Synthesis and characterization of a new photoluminescent material (8-hydroxy quinoline) bis (2-2’bipyridine) lanthanum La(Bpy)2q

International Nuclear Information System (INIS)

Kumar, Rahul; Bhargava, Parag

2016-01-01

A new photoluminescence material, (8-hydroxy quinoline) bis (2-2’bipyridine) lanthanum has been synthesized and characterized by different techniques. The prepared material La(Bpy) 2 q was characterized for structural, thermal and photoluminescence analysis. Structural analysis of this material was done by Fourier transformed infrared spectroscopy (FTIR) and mass spectroscopy. Thermal analysis of this material was done by thermal gravimetric analysis (TGA) shows the thermal stability up to 190°C.Absorption and emission spectra of the material was measured by UV-visible spectroscopy and photoluminescence spectroscopy. Solution of this material La(Bpy) 2 q in ethanol showed absorption peak at 385nm, which may be attributed due to (π – π*) transitions. The photoluminescence spectra of La(Bpy) 2 q in ethanol solution showed intense peak at 490 nm

Synthesis and characterization of a new photoluminescent aluminium complex bis (8-hydroxyquinoline) (2,2'bipyridine) aluminium Al(Bpy)q2

Science.gov (United States)

Kumar, Rahul; Bhargava, Parag

2018-04-01

A new photoluminescent material, Bis(8-hydroxyquinoline) (2,2'bipyridine) aluminium Al(Bpy)q2 has been synthesized and characterized. Solution of this material Al(Bpy)q2 in ethanol showed absorption maxima at 370nm which was attributed to the moderate energy (π - π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy)q2 in ethanol solution showed peak at 516 nm. This material shows thermal stability up to 385°C. The time resolved photoluminescence spectra of the material showed two life time components. The decay times of the first and second component are 6.1 ns and 24.5 ns respectively.

Luminescent Properties of Surface Functionalized BaTiO3 Embedded in Poly(methyl methacrylate)

Science.gov (United States)

Requena, Sebastian; Lacoul, Srijan; Strzhemechny, Yuri M.

2014-01-01

As-received BaTiO3 nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyl)triethoxysilane (APTES) and mixed with poly(methyl methacrylate)/toluene solution. The nanocomposite solution was spin coated on Si substrates to form thin films. The photoluminescence spectrum of the pure powder was composed of a bandgap emission at 3.0 eV and multiple bands centered about 2.5 eV. Surface functionalization of the BaTiO3 powder via APTES increases overall luminescence at room temperature while only enhancing bandgap emission at low-temperature. Polymer coating of the functionalized nanoparticles significantly enhances bandgap emissions while decreasing emissions associated with near-surface lattice distortions at 2.5 eV. PMID:28788468

Luminescent Properties of Surface Functionalized BaTiO3 Embedded in Poly(methyl methacrylate

Directory of Open Access Journals (Sweden)

Sebastian Requena

2014-01-01

Full Text Available As-received BaTiO3 nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyltriethoxysilane (APTES and mixed with poly(methyl methacrylate/toluene solution. The nanocomposite solution was spin coated on Si substrates to form thin films. The photoluminescence spectrum of the pure powder was composed of a bandgap emission at 3.0 eV and multiple bands centered about 2.5 eV. Surface functionalization of the BaTiO3 powder via APTES increases overall luminescence at room temperature while only enhancing bandgap emission at low-temperature. Polymer coating of the functionalized nanoparticles significantly enhances bandgap emissions while decreasing emissions associated with near-surface lattice distortions at 2.5 eV.

Synthesis and characterization of a new photoluminescent material (8-hydroxy quinoline) bis (2-2’bipyridine) lanthanum La(Bpy)2q

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rahul, E-mail: id-kumarrahul003@gmail.com; Bhargava, Parag [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology-Bombay, Mumbai-400076 (India)

2016-05-06

A new photoluminescence material, (8-hydroxy quinoline) bis (2-2’bipyridine) lanthanum has been synthesized and characterized by different techniques. The prepared material La(Bpy){sub 2}q was characterized for structural, thermal and photoluminescence analysis. Structural analysis of this material was done by Fourier transformed infrared spectroscopy (FTIR) and mass spectroscopy. Thermal analysis of this material was done by thermal gravimetric analysis (TGA) shows the thermal stability up to 190°C.Absorption and emission spectra of the material was measured by UV-visible spectroscopy and photoluminescence spectroscopy. Solution of this material La(Bpy){sub 2}q in ethanol showed absorption peak at 385nm, which may be attributed due to (π – π*) transitions. The photoluminescence spectra of La(Bpy){sub 2}q in ethanol solution showed intense peak at 490 nm.

Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Rihani, J.; Sedrine, N.B.; Sallet, V.; Oueslati, M.; Chtourou, R.

2008-01-01

InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 deg. C). With increasing excitation density, the ground-state transition energy is found to decrease by 8 meV, while the excited-state transition energies exhibit resonance behaviour. The redshift of the ground-state emission was related to the band-gap renomalization (BGR) effect whereas the blueshift of the excited-state emissions was assigned to the compensation between filling of fine structure states and BGR effects. Using a quasi-resonant PL measurement, we have shown that the renormalization of the band-gap had to occur in the QD barrier

Cu2I2Se6: A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature.

Science.gov (United States)

Lin, Wenwen; Stoumpos, Constantinos C; Kontsevoi, Oleg Y; Liu, Zhifu; He, Yihui; Das, Sanjib; Xu, Yadong; McCall, Kyle M; Wessels, Bruce W; Kanatzidis, Mercouri G

2018-02-07

Cu 2 I 2 Se 6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu 2 I 2 Se 6 crystallizes in the rhombohedral R3̅m space group with a density of d = 5.287 g·cm -3 and a wide bandgap E g of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass m e * of 0.32. The congruently melting compound was grown in centimeter-size Cu 2 I 2 Se 6 single crystals using a vertical Bridgman method. A high electric resistivity of ∼10 12 Ω·cm is readily achieved, and detectors made of Cu 2 I 2 Se 6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241 Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ∼46 cm 2 ·V -1 ·s -1 . This value is comparable to that of one of the leading γ-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.

Hemoglobin glycation index as a useful predictor of therapeutic responses to dipeptidyl peptidase-4 inhibitors in patients with type 2 diabetes.

Directory of Open Access Journals (Sweden)

Yu-Wei Chen

Full Text Available A high hemoglobin glycation index (HGI and glycated hemoglobin (HbA1c level are associated with greater inflammatory status, and dipeptidyl peptidase-4 (DPP-4 inhibitors can suppress inflammation. We aimed to evaluate the relationship between HGI and the therapeutic effect of DPP-4 inhibitors.This retrospective cohort study followed 468 patients with type 2 diabetes receiving DPP-4 inhibitor treatment for 1 year. Estimated HbA1c was calculated using a linear regression equation derived from another 2969 randomly extracted patients with type 2 diabetes based on fasting plasma glucose (FPG level. The subjects were divided into two groups based on HGI (HGI = observed HbA1c - estimated HbA1c. Mixed model repeated measures were used to compare the treatment efficacy after 1 year in patients with a low (HGI<0, n = 199 and high HGI (HGI≧0, n = 269.There were no significant group differences in mean changes of FPG after 1 year (-12.8 and -13.4 mg/dL in the low and high HGI groups, respectively. However, the patients with a high HGI had a significantly greater reduction in HbA1c from baseline compared to those with a low HGI (-1.9 versus -0.3% [-20.8 versus -3.3 mmol/mol]. Improvements in glycemic control were statistically significantly associated with the tested DPP-4 inhibitors in the high HGI group (-2.4, -1.4, -1.2 and -2.2% [-26.2, -15.3, -13.1 and -24.0 mmol/mol] for vildagliptin, linagliptin, saxagliptin and sitagliptin, respectively but not in the low HGI group.The HGI index derived from FPG and HbA1c may be able to identify who will have a better response to DPP-4 inhibitors.

First-principles study of bandgap tuning in Ge1-xPbxSe

Science.gov (United States)

Lohani, Himanshu

2018-03-01

Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

Energy Technology Data Exchange (ETDEWEB)

Su, Justin [Stanford Univ., CA (United States); Chen, Changxin [Stanford Univ., CA (United States); Gong, Ming [Stanford Univ., CA (United States); Kenney, Michael [Stanford Univ., CA (United States)

2017-01-04

Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edges throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for

Effect of Eu{sup 3+} doping on the structural and photoluminescence properties of cubic CaCO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Gao, Yan; Sun, Yidi; Zou, Haifeng; Sheng, Ye; Zhou, Xiuqing; Zhang, Bowen; Zhou, Bing, E-mail: zhoubing@jlu.edu.cn

2016-01-15

Graphical abstract: - Highlights: • The doping of Eu{sup 3+} ions decreased the size of CaCO{sub 3} nanoparticles. • The doping of Eu{sup 3+} ions brought about the change of CaCO{sub 3}'s optical bandgap. • Multiple sites of Eu{sup 3+} in CaCO{sub 3} nanocrystals have been identified. - Abstract: CaCO{sub 3}:xEu{sup 3+} (x = 0, 0.010, 0.015, 0.020, and 0.025) cubic nanoparticles were synthesized by carbonation method. The powder XRD patterns and SEM images of the CaCO{sub 3}:xEu{sup 3+} nanoparticles demonstrate that both the crystalline sizes and average particle sizes of synthesized samples decreased with the increase of Eu{sup 3+} content until x = 0.020. Kubelka–Munk plots and bandgap energy estimation indicate that the doping of Eu{sup 3+} ions changed optical bandgap of CaCO{sub 3}. Photoluminescence (PL) spectra show that the PL intensity of the CaCO{sub 3}:xEu{sup 3+} nanoparticles was enhanced with the increase of Eu{sup 3+} content in cubic CaCO{sub 3}:xEu{sup 3+}, and concentration quenching occurred when Eu{sup 3+} concentration exceeded 2.0 mol%. In addition, the doped sites of Eu{sup 3+} in CaCO{sub 3} crystalline were identified by the site-selective spectroscopy and decay curves.

Optical studies of wide bandgap semiconductor epilayers and quantum well structures

International Nuclear Information System (INIS)

May, L.

1998-09-01

This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant

Quasi-self-trapped Frenkel-exciton near-UV luminescence with large Stokes shift in wide-bandgap Cs4PbCl6 nanocrystals

Science.gov (United States)

Zhang, Yumeng; Fan, Baolu; Liu, Yuzhen; Li, Hongxia; Deng, Kaiming; Fan, Jiyang

2018-04-01

Inorganic lead halide perovskite nanocrystals (NCs) have attracted great interest owing to their superior luminescence and optoelectronic properties. In comparison to cubic CsPbX3 (X = Cl, Br, or I) that has visible luminescence, trigonal Cs4PbX6 has a much larger bandgap and distinct optical properties. Little has been known about the luminescence properties of the Cs4PbX6 NCs. In this study, we synthesize the well-crystallized Cs4PbCl6 NCs with sizes of 2.2-11.8 nm, which exhibit stable and near-UV luminescence (with a lifetime of 19.7-24.2 ns) with a remarkable quantum confinement effect at room temperature. In comparison to the negligible Stokes shift in the CsPbCl3 NCs, the Stokes shift of the Cs4PbCl6 NCs is very large (0.91 eV). The experimental results in combination with the first-principles calculations reveal that the near-UV luminescence of the Cs4PbCl6 NCs stems from the Frenkel excitons self-trapped in the isolated PbCl64- octahedrons. This is different from the CsPbCl3 NCs whose luminescence originates from the free Wannier excitons. The theoretical model based on the lattice relaxation is proposed to account for the large Stokes shift and its abnormal decrease with the decreasing particle size.

Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

Science.gov (United States)

Choi, Seon Bin; Song, Man Suk; Kim, Yong

2018-04-01

The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

Science.gov (United States)

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

Science.gov (United States)

Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2015-06-29

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy.

Science.gov (United States)

Liu, Qianlang; March, Katia; Crozier, Peter A

2017-07-01

Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO 2 anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO 2 showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1eV above the MgO valence band. At the surfaces of TiO 2 nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. Copyright © 2016 Elsevier B.V. All rights reserved.

Improved yield of high resolution mercuric iodide gamma-ray spectrometers

International Nuclear Information System (INIS)

Gerrish, V.; van den Berg, L.

1990-01-01

Mercuric iodide (HgI 2 ) exhibits properties which make it attractive for use as a solid state nuclear radiation detector. The wide bandgap (E g = 2.1 eV) and low dark current allow room temperature operation, while the high atomic number provides a large gamma-ray cross section. However, poor hole transport has been a major limitation in the routine fabrication of high-resolution spectrometers using this material. This paper presents the results of gamma-ray response and charge transport parameter measurements conducted during the past year at EG ampersand G/EM on 96 HgI 2 spectrometers. The gamma-ray response measurements reveal that detector quality is correlated with the starting material used in the crystal growth. In particular, an increased yield of high-resolution spectrometers was obtained from HgI 2 which was synthesized by precipitation from an aqueous solution, as opposed to using material from commercial vendors. Data are also presented which suggest that better spectrometer performance is tied to improved hole transport. Finally, some initial results on a study of detector uniformity reveal spatial variations which may explain why the correlation between hole transport parameters and spectrometer performance is sometimes violated. 6 refs., 3 figs

Probing the interlayer coupling of twisted bilayer MoS2 using photoluminescence spectroscopy.

Science.gov (United States)

Huang, Shengxi; Ling, Xi; Liang, Liangbo; Kong, Jing; Terrones, Humberto; Meunier, Vincent; Dresselhaus, Mildred S

2014-10-08

Two-dimensional molybdenum disulfide (MoS2) is a promising material for optoelectronic devices due to its strong photoluminescence emission. In this work, the photoluminescence of twisted bilayer MoS2 is investigated, revealing a tunability of the interlayer coupling of bilayer MoS2. It is found that the photoluminescence intensity ratio of the trion and exciton reaches its maximum value for the twisted angle 0° or 60°, while for the twisted angle 30° or 90° the situation is the opposite. This is mainly attributed to the change of the trion binding energy. The first-principles density functional theory analysis further confirms the change of the interlayer coupling with the twisted angle, which interprets our experimental results.

Photoluminescence enhancement in few-layer WS2 films via Au nanoparticles

Directory of Open Access Journals (Sweden)

Sin Yuk Choi

2015-06-01

Full Text Available Nano-composites of two-dimensional atomic layered WS2 and Au nanoparticles (AuNPs have been fabricated by sulfurization of sputtered W films followed by immersing into HAuCl4 aqueous solution. The morphology, structure and AuNPs distribution have been characterized by electron microscopy. The decorated AuNPs can be more densely formed on the edge and defective sites of triangle WS2. We have compared the optical absorption and photoluminescence of bare WS2 and Au-decorated WS2 layers. Enhancement in the photoluminescence is observed in the Au-WS2 nano-composites, attributed to localized surface plasmonic effect. This work provides the possibility to develop photonic application in two-dimensional materials.

Synthesis and photoluminescence properties of Ba2CaZn2Si6O17:Eu3+ red phosphors for white LED applications

International Nuclear Information System (INIS)

Annadurai, G.; Kennedy, S. Masilla Moses

2016-01-01

Novel pellyite type Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ red emitting phosphors with different Eu 3+ contents were synthesized by the solid state reaction method. The crystal structure, photoluminescence properties and concentration quenching of Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ phosphors were investigated. Powder X-ray diffraction measurements confirmed the structure of the samples. The photoluminescence emission (PL) and excitation (PLE) spectra were measured. The results showed that the dominant hypersensitive red emission peak of the phosphors Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ was located at 613 nm attributed to the Eu 3+ transition ( 5 D 0 → 7 F 2 ) which could be effectively excited by 395 nm (near-UV). The latter band matched well with the emission from the near-UV LED chips. The intensity ratio of 5 D 0 → 7 F 2 to 5 D 0 → 7 F 1 transition showed slight variation with Eu 3+ concentrations. The Eu 3+ emission intensity was maximum for 9 mol%. The luminescence quantum efficiency was determined and also the decay profiles were obtained and analyzed. In addition, the Commission International del'Eclairage (CIE) chromaticity coordinates of Ba 2 CaZn 2 Si 6 O 17 :0.09Eu 3+ phosphor were calculated to be 0.637 and 0.362. The experimental results demonstrated that the Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ red emitting phosphor is a potential candidate for white light emitting diodes (WLEDs) pumped by near-UV chip. - Highlights: • A novel Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ red phosphor was synthesized. • The samples yielded a dominant PL emission of Eu 3+ at 613 nm. • Eu 3+ concentration was optimized to be 9 mol% in Ba 2 CaZn 2 Si 6 O 17. • CIE chromaticity coordinates were estimated from the emission spectrum.

Enhancement of white-light-emission from single-phase Sr5(PO4)3F:Eu(2+),Mn(2+) phosphors for near-UV white LEDs.

Science.gov (United States)

Feng, Yaomiao; Huang, Jinping; Liu, Lili; Liu, Jie; Yu, Xibin

2015-09-07

A series of single-phase broadband white-light-emitting Sr5(PO4)3F:Eu(2+),Mn(2+) phosphors were prepared by a solid state reaction. The luminescence property, and the crystal and electronic structures of the fluorophosphates were studied by photoluminescence analysis, XRD Rietveld refinement and density functional theory calculation (DFT), respectively. Under near ultraviolet excitation in the 250 to 430 nm wavelength range, the phosphors exhibit two emission bands centered at 440 and 556 nm, caused by the Eu(2+) and Mn(2+) ions. By altering the relative ratios of Eu(2+) and Mn(2+) in the compounds, the emission color could be modulated from blue to white. The efficient energy transfer from the Eu(2+) to Mn(2+) ions could be ascribed to the well crystallized host lattice and the facile substitution of Eu(2+) and Mn(2+) for Sr(2+) sites due to similar ionic radii. A series of fluxes were investigated to improve the photoluminescence intensity. When KCl was used as flux in the synthesis, the photoluminescence intensity of Sr5(PO4)3F:Eu(2+),Mn(2+) was enhanced by 85% compared with no fluxes added. These results demonstrate that the single-phase Sr5(PO4)3F:Eu(2+),Mn(2+) with enhanced luminescence efficiency could be promising as a near UV-convertible direct white-light-emitting phosphor for WLED applications.

Structural and photoluminescence investigations of Sm{sup 3+} doped BaY{sub 2}ZnO{sub 5} nanophosphors

Energy Technology Data Exchange (ETDEWEB)

Chahar, Sangeeta; Taxak, V.B.; Dalal, Mandeep; Singh, Sonika; Khatkar, S.P., E-mail: s_khatkar@rediffmail.com

2016-05-15

Highlights: • BaY{sub 2(1−x)}Sm{sub 2x}ZnO{sub 5} nanophosphors have been synthesized via solution combustion. • The nanophosphors have been characterized by XRD, TEM and PL spectroscopy. • The crystal structure reveals influence of doping on lattice parameters. • This nanophosphor executes orange–red emission under near UV excitation. - Abstract: BaY{sub 2}ZnO{sub 5}:Sm{sup 3+} nanophosphor was successfully synthesized using solution combustion process. XRD and photoluminescence (PL) techniques were used to analyze the structural and photoluminescence properties. Morphological study of the thermally stable powder was carried out using transmission electron microscope (TEM). Rietveld refinement technique has been used to analyze the samples qualitatively as well as quantitatively. X-Ray diffraction analysis confirms that the highly crystalline single phased Sm{sup 3+} doped BaY{sub 2}ZnO{sub 5} nanophosphor crystallizes in orthorhombic lattice with Pbnm space group. The average particle size lies in the range 80–90 nm with spherical morphology. The photoluminescence excitation at 411 nm yields an intense orange–red emission centered at 610 nm due to {sup 4}G{sub 5/2}–{sup 6}H{sub 7/2} transition. The concentration dependent luminescent behavior of BaY{sub 2(1−x)}Sm{sub 2x}ZnO{sub 5} nanophosphor shows that the optimum concentration for best luminescence is 3 mol%. These results indicate that these nanophosphors find potential applications in the field of phosphor-converted white LED systems.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Science.gov (United States)

Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

2013-01-01

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

Tunable bandgaps in a deployable metamaterial

Science.gov (United States)

Nanda, Aditya; Karami, M. A.

2018-06-01

In this manuscript, we investigate deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict notable changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, non-trivial increases in bandwidth of the odd-numbered bandgaps occurs even at small fold angles-the bandwidth for the first and third bandgaps effectively double in size (increase by 100 %) at Ψ = 20 deg relative to those at Ψ = 0. This could have ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is a pertinent parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can

Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

KAUST Repository

Tangi, Malleswararao

2016-07-26

The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

International Nuclear Information System (INIS)

Hamadeh, H; Naddaf, M; Jazmati, A

2008-01-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

Energy Technology Data Exchange (ETDEWEB)

Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

2008-12-21

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

International Nuclear Information System (INIS)

Hamadeh, H.; Naddaf, M.; Jazmati, A.

2009-01-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

Science.gov (United States)

Hamadeh, H.; Naddaf, M.; Jazmati, A.

2008-12-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Optical properties of phosphorene

International Nuclear Information System (INIS)

Yang, Jiong; Lu Yuerui

2017-01-01

Phosphorene is a two-dimensional semiconductor with layers-dependent bandgap in the near-infrared range and it has attracted a great deal of attention due to its high anisotropy and carrier mobility. The highly anisotropic nature of phosphorene has been demonstrated through Raman and polarization photoluminescence measurements. Photoluminescence spectroscopy has also revealed the layers-dependent bandgap of phosphorene. Furthermore, due to the reduced dimensionality and screening in phosphorene, excitons and trions can stably exist at elevated temperatures and have large binding energies. The exciton and trion dynamics are thus detected by applying electrical bias or optical injection to the phosphorene system. Finally, various optical and optoelectronic applications based on phosphorene have been demonstrated and discussed. (topical reviews)

Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Liu, Qianlang [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States); March, Katia [Laboratoire de Physique des Solides, Bâtiment 510, Université Paris-Sud, 91405 Orsay Cedex (France); Crozier, Peter A., E-mail: CROZIER@asu.edu [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States)

2017-07-15

Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO{sub 2} anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO{sub 2} showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60 nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1 eV above the MgO valence band. At the surfaces of TiO{sub 2} nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. - Highlights: • Bandgap states detected with aloof beam monochromated EELS on oxide nanoparticle surfaces. • Dielectric theory applied to simulate the spectra and interpret surface structure. • Density of states models also be employed to understand the surface electronic structure. • In MgO, one states associate with water species was found close to the valence band edge. • In anatase, two mid-gap states associated with point defects were found.

Temperature-dependent photoluminescence study of InP/ZnS quantum dots

Science.gov (United States)

Thuy Pham, Thi; Tran, Thi Kim Chi; Liem Nguyen, Quang

2011-06-01

This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is normally interpreted as resulting from lattice imperfections in the crystalline structure of InP/ZnS quantum dots (QDs). Peak positions of both the X and I emissions vary similarly with increasing temperature and the same as the InP bandgap narrowing with temperature. In the temperature range from 15 to 80 K, the ratio of the integrated intensity from the X and the I emissions decreases gradually and then this ratio increases fast at temperatures higher than 80 K. This could result from a population of charge carriers in the lattice imperfection states at a temperature below 80 K to increase the I emission but then with these charge carriers being released to contribute to the X emission.

Photoluminescence properties of Gd_2O_3:Eu"3"+ for solid state lighting

International Nuclear Information System (INIS)

Ukare, R.S.; Zade, G.D.; Dhoble, S.J.

2016-01-01

We synthesized Gd_2O_3 doped europium (III) (1 m%) nanophosphors using the precipitation method and combustion method. The synthesized nanophosphors were characterized by X-ray diffraction (XRD) and SEM techniques. The optical properties of the synthesized nanophosphors were investigated by photoluminescence spectroscopy. The XRD patterns of Gd_2O_3 revealed formation of desired cubic phase by both methods. The XRD of nanophosphors synthesized by both methods were highly consistent with standard JCPDS file of Gd_2O_3 indicating no structural change with incorporation of the Eu"3"+ ions in the Gd_2O_3 matrix. Both XRD and SEM result confirms the particle size of prepared sample in nanometer range. The phosphor could be effectively excited by near UV at 395 nm. The Eu"3"+ doping of Gd_2O_3 produced red luminescence around 613 nm. The stimulated CIE chromaticity coordinates were also calculated. (author)

Low-bandgap polymer photovoltaic cells

NARCIS (Netherlands)

Duren, van J.K.J.; Dhanabalan, A.; Hal, van P.A.; Janssen, R.A.J.

2001-01-01

A-novel low-bandgap conjugated polymer (PTPTB, Eg = ~1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, as a donor material is studied together with a soluble fullerene derivative (PCBM) as acceptor to

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

International Nuclear Information System (INIS)

Xu, Li-Chun; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

2015-01-01

Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C b , can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices

Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

Energy Technology Data Exchange (ETDEWEB)

Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

2015-01-01

Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C{sub b}, can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices.

Photoluminescence properties of color-tunable SrMgAl10O17:Eu2+,Mn2+ phosphors for UV LEDs

International Nuclear Information System (INIS)

Ju Guifang; Hu Yihua; Chen Li; Wang Xiaojuan

2012-01-01

Aluminate phosphors SrMgAl 10 O 17 codoped with Eu 2+ and Mn 2+ ions were prepared by solid-state reaction. The phase structure and photoluminescence properties of the as-prepared phosphors were characterized by powder X-ray diffraction, photoluminescence excitation and emission spectra. Upon excitation of UV light, two broad emission bands centered at 470 and 515 nm were observed, and they were assigned to Eu 2+ and Mn 2+ emissions, respectively. The emission color of the phosphors can be tuned from blue to cyan and finally to green by adjusting the concentration ratios of Eu 2+ and Mn 2+ . Effective energy transfer occurs from Eu 2+ to Mn 2+ in the host due to the spectral overlap between the emission band of Eu 2+ and the excitation bands of Mn 2+ . The energy transfer mechanism was demonstrated to be electric dipole–quadrupole interaction. The energy transfer efficiency and critical distance were also calculated. The phosphors exhibit strong absorption in near UV spectral region and therefore they are potentially useful as UV-convertible phosphors for white LEDs. - Highlights: ► The strong absorption of phosphors matches well with the emission band of UV LED. ► The energy transfer from Eu 2+ to Mn 2+ in SrMgAl 10 O 17 was investigated in detail. ► The emission color can be tuned by adjusting the content of Eu 2+ and Mn 2+ . ► Two methods were employed to calculate the critical distance of energy transfer.

Photoluminescence of spray pyrolysis deposited ZnO nanorods

Directory of Open Access Journals (Sweden)

Mikli Valdek

2011-01-01

Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang

2017-12-16

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang; Weng, Yakui; Yin, Xinmao; Yu, Xiaojiang; Sarath Kumar, S. R.; Wehbe, Nimer; Wu, Haijun; Alshareef, Husam N.; Pennycook, Stephen J.; Breese, Mark B. H.; Chen, Jingsheng; Dong, Shuai; Wu, Tao

2017-01-01

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Synthesis and characterization of a low bandgap conjugated polymer for bulk heterojunction photovoltaic cells

NARCIS (Netherlands)

Dhanabalan, A.; Duren, van J.K.J.; Hal, van P.A.; Dongen, van J.L.J.; Janssen, R.A.J.

2001-01-01

Low optical bandgap conjugated polymers may improve the efficiency of organic photovoltaic devices by increasing the absorption in the visible and near infrared region of the solar spectrum. Here we demonstrate that condensation polymerization of

Microwave-assisted synthesis and photoluminescence properties of ...

Indian Academy of Sciences (India)

2017-11-11

Nov 11, 2017 ... The photoluminescence property was studied by near-UV (nUV) excitation. The XRD .... spectrofluorimeter equipped with a 450-W Xenon lamp, in the range of .... nUV-excited RGB tricolour LED for production of white light.

Preparation and photoluminescence properties of Tm{sup 3+}-doped ZrO{sub 2} nanotube arrays

Energy Technology Data Exchange (ETDEWEB)

Wang, Mingli [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Zhao, Jianling, E-mail: hebutzhaoj@126.com [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Xu, Rongqing [Tianjin Zhonghuan Advanced Material & Technology Co., LTD, Tianjin 300384 (China); Fu, Ning [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Wang, Xixin, E-mail: xixinwang@126.com [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

2016-07-25

Tm{sup 3+}-doped ZrO{sub 2} nanotube arrays were prepared by anodization of a Zr–Tm alloy (3 at.% Tm) obtained by a powder metallurgical method. The morphologies, structures, elemental valence, and photoluminescence properties were characterized by using scanning electron microscope, X-ray diffractometer, X-ray photoelectron spectrometer and photoluminescence analyser, respectively. Results show that preparing conditions and annealing temperatures have significant effects on the crystalline structure and photoluminescence performance. The sample TmZNT-Org prepared in formamide + glycerol organic solution is mainly monoclinic phase and the sample TmZNT-Aq prepared in aqueous solution is mainly tetragonal phase. The sample TmZNT-Org had the strongest photoluminescence peak when annealed at 800 °C, whereas both TmZNT-Aq samples annealed at 600 °C and 800 °C had the strongest photoluminescence peak. The monoclinic phase was conductive to the emission at 454 nm while the tetragonal phase was conductive to the emission at 460 nm. - Highlights: • Tm{sup 3+}-doped ZrO{sub 2} nanotube arrays were prepared by anodization of a Zr-Tm alloy. • Crystal structure had remarkable effects on the photoluminescence properties. • The monoclinic phase was conductive to the emission at 454 nm. • The tetragonal phase was conductive to the emission at 460 nm.

Defect chemistry in CuGaS2 thin films: A photoluminescence study

International Nuclear Information System (INIS)

Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

2007-01-01

In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

KAUST Repository

Marcinkevičius, S.

2014-09-15

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

Fullerene-based low-density superhard materials with tunable bandgaps

Science.gov (United States)

Cao, Ai-Hua; Zhao, Wen-Juan; Gan, Li-Hua

2018-06-01

Four carbon allotropes built from tetrahedral symmetrical fullerenes C28 and C40 are predicted to be superhard materials with mass density around that of water, and all of them are porous semiconductors. Both the bandgaps and hardness decrease with increasing ratio of sp2 hybridized carbon atoms. The mechanical and thermodynamic stabilities of C28- and C40-based allotropes at zero pressure are confirmed by a variety of state-of-the-art theoretical calculations. The evolution trend of bandgap found here suggests that one can obtain low-density hard materials with tunable bandgaps by substituting the carbon atom in diamond with different Td-symmetrical non-IPR fullerene Cn.

Coupled Acoustic-Mechanical Bandgaps

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Kook, Junghwan

2016-01-01

medium and the presence of acoustic resonances. It is demonstrated that corrugation of the plate structure can introduce bending wave bandgaps and bandgaps in the acoustic domain in overlapping and audible frequency ranges. This effect is preserved also when taking the physical coupling between the two...... domains into account. Additionally, the coupling is shown to introduce extra gaps in the band structure due to modal interaction and the appearance of a cut-on frequency for the fundamental acoustic mode....

Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

International Nuclear Information System (INIS)

Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

2017-01-01

Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

A novel synthesis of magnetic and photoluminescent graphene quantum dots/MFe2O4 (M = Ni, Co) nanocomposites for catalytic application

Science.gov (United States)

Naghshbandi, Zhwan; Arsalani, Nasser; Zakerhamidi, Mohammad Sadegh; Geckeler, Kurt E.

2018-06-01

In recent year, the research is focused on the nanostructured catalyst with increase physiochemical properties. Herein, Different magnetic nanocomposites of graphene quantum dots (GQD) and MFe2O4 (M = Ni, Co) with intrinsic photoluminescent and ferromagnetic properties were synthesized by a convenient co-precipitation method. The structure, morphology, and properties of these nanocomposites as well as the catalytic activity of the nanocomposites for the reduction of p-nitrophenol were investigated. The catalytic activity was found to be in the order of NiFe2O4/GQD > CoFe2O4/GQD > NiFe2O4 > CoFe2O4. The sample NiFe2O4/GQD exhibited the best catalytic activity with an apparent rate constant of 3.56 min-1 and a reduction completion time to p-aminophenol of 60 s. The catalysts can be reused by a magnetic field and display good stability, which can be recycled for six successive experiment with a conversion percentage of more than 95%. These results demonstrate that the nanocomposite NiFe2O4/GQD is an efficient catalyst for the reduction of p-nitrophenol compound. Also, the new nanocomposites have shown a significant reduction in the direct and indirect energy bandgaps when compared to pure GQD and the corresponding magnetic metal oxides.

Single-graded CIGS with narrow bandgap for tandem solar cells.

Science.gov (United States)

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects

Science.gov (United States)

Kaleem, Mohammad; Nazir, Sajid; Saqib, Nazar Abbas

2016-03-01

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

Study of the pseudo-ternary Ag2SAs2S3HgI2 vitreous system

Science.gov (United States)

Boidin, R.; Le Coq, D.; Cuisset, A.; Hindle, F.; Brubach, J.-B.; Michel, K.; Bychkov, E.

2013-03-01

Chalcogenide alloys in the Ag2SAs2S3HgI2 pseudo-ternary system were synthesized and their vitreous nature was verified by X-ray diffraction. The glass transition and crystallization temperatures (Tg and Tc), the density (d), and the total electrical conductivity (σ) were measured for all samples of three series, A, B, and C corresponding to (Ag2S)50-x/2(As2S3)50-x/2(HgI2)x, (Ag2S)y(As2S3)80-y(HgI2)20 and (Ag2S)z(As2S3)50(HgI2)50-z, respectively. The maximum of Tg was approximately 160 °C for glasses with low HgI2 content whereas the maximum of density (5.75 g cm-3) was obtained for the sample in the B-series with the highest Ag2S concentration (z=60 mol%). This composition also possesses the highest conductivity at 298 K (σ298 K≈10-3 S cm-1). Unexpectedly the conductivity of the A-series samples was observed to decrease as a function of the Ag2S content. The far-infrared transmission in the 100-600 cm-1 window range (3.3-18.2 THz, 100-16.6 μm) was also given for a few glass compositions highlighting the strong influence of the HgI2 content.

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

Large bandgap narrowing in rutile TiO2 aimed towards visible light applications and its correlation with vacancy-type defects history and transformation

Science.gov (United States)

Nair, Radhika V.; Gayathri, P. K.; Siva Gummaluri, Venkata; Nambissan, P. M. G.; Vijayan, C.

2018-01-01

Extension of photoactivity of TiO2 to the visible region is achievable via effective control over the intrinsic defects such as oxygen and Ti vacancies, which has several applications in visible photocatalysis and sensing. We present here the first observation of an apparent bandgap narrowing and bandgap tuning effect due to vacancy cluster transformation in rutile TiO2 structures to 1.84 eV from the bulk bandgap of 3 eV. A gradual transformation of divacancies (V Ti-O) to tri vacancies ({{V}Ti-O-T{{i-}}} ) achieved through a controlled solvothermal scheme appears to result in an apparent narrowing bandgap and tunability, as supported by positron annihilation lifetime and electron paramagnetic resonance spectroscopy measurements. Visible photocatalytic activity of the samples is demonstrated in terms of photodegradation of rhodamine B dye molecules.

Optically controlled photonic bandgap structures for microstrip circuits

International Nuclear Information System (INIS)

Cadman, Darren Arthur

2003-01-01

This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz. When the silicon is illuminated, the structure's filtering properties are suppressed. Under illumination the experimental results display an increase in S 21 of 6.5dB and a reduction in S 11 of more than 10dB at 9.9GHz. A comparison of measured and simulated results reveal that the photogenerated excess carrier density is between 4 x 10 15 cm -3 and 1.1 x 10 16 cm -3 . (author)

Photoluminescence in Spray Pyrolysis Deposited β-In2S3 Thin Films

Science.gov (United States)

Jayakrishnan, R.

2018-04-01

Spray pyrolysis deposited In2S3 thin films exhibit two prominent photoluminescent emissions. One of the emissions is green in color and centered at around ˜ 540 nm and the other is centered at around ˜ 690 nm and is red in color. The intensity of the green emission decreases when the films are subjected to annealing in air or vacuum. The intensity of red emission increases when films are air annealed and decreases when vacuum annealed. Vacuum annealing leads to an increase in work function whereas air annealing leads to a decrease in work function for this thin film system relative to the as deposited films indicating changes in space charge regions. Surface photovoltage analysis using a Kelvin probe leads to the conclusion that inversion of band bending occurs as a result of annealing. Correlating surface contact potential measurements using a Kelvin probe, x-ray photoelectron spectroscopy and photoluminescence, we conclude that the surface passivation plays a critical role in controlling the photoluminescence from the spray pyrolysis deposited for In2S3 thin films.

Hot injection synthesis of Cu(In, Ga)Se2 nanocrystals with tunable bandgap

Science.gov (United States)

Latha, M.; Aruna Devi, R.; Velumani, S.

2018-05-01

CuIn1-xGaxSe2 nanocrystals (CIGSe NCs) were synthesized with different gallium (Ga) content by the hot injection process at low reaction temperature for the first time. The Ga content [x = Ga(In + Ga)] was varied such as 0, 0.25, 0.50 and 0.75 to study their influences on the structural, morphological, compositional and optical properties of CIGSe NCs. X-ray diffraction (XRD) analysis showed the peak shift towards higher 2θ angle. The lattice parameters a and c were decreased linearly as x value increases which propitiated Vegard's law. Transmission electron microscopy (TEM) analysis revealed a decrease in the particle size from 55 to 22 nm. Ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectra indicated a blue shift towards the lower wavelength and bandgap was tuned from 1.04 to 1.41eV. Apart from this, CIGSe thin films were prepared by doctor blade coating method followed by annealing under Se/Ar atmosphere. The mobility of CIGSe thin film increased whereas resistivity decreased. Moreover, the photoconductivity of CIGSe annealed thin film exhibited almost 2-fold increase under an illumination of light. We realize from these results that the synthesized CIGSe NCs with x = 0.25 is expected to have the important perspective to be efficiently exploited as an absorber layer in cost-effective thin film solar cells.

Photoluminescence and Photoconductivity to Assess Maximum Open-Circuit Voltage and Carrier Transport in Hybrid Perovskites and Other Photovoltaic Materials.

Science.gov (United States)

Braly, Ian L; Stoddard, Ryan J; Rajagopal, Adharsh; Jen, Alex K-Y; Hillhouse, Hugh W

2018-06-06

Photovoltaic (PV) device development is much more expensive and time consuming than the development of the absorber layer alone. This perspective focuses on two methods that can be used to rapidly assess and develop PV absorber materials independent of device development. The absorber material properties of quasi-Fermi level splitting and carrier diffusion length under steady effective one-Sun illumination are indicators of a material's ability to achieve high VOC and JSC. These two material properties can be rapidly and simultaneously assessed with steady-state absolute intensity photoluminescence and photoconductivity measurements. As a result, these methods are extremely useful for predicting the quality and stability of PV materials prior to PV device development. Here, we summarize the methods, discuss their strengths and weaknesses, and compare photoluminescence and photoconductivity results with device performance for four hybrid perovskite compositions of various bandgaps (1.35 to 1.82 eV), CISe, CIGSe, and CZTSe.

Influence of band-gap grading on luminescence properties of Cu(In,Ga)Se{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Haarstrich, Jakob; Metzner, Heiner; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, Thorsten; Kaufmann, Christian A.; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Solar Energy Research, Institute for Technology, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Undisz, Andreas [Institute for Material Science and Technology, Metallic Materials, Friedrich-Schiller-University Jena, Loebdergraben 32, 07743 Jena (Germany)

2011-07-01

Cathodoluminescence (CL) has been measured on Cu(In,Ga)Se{sub 2} with Ga-grading as it is used in high-efficiency thin-film solar cells at 10 K in both cross-section and plain view configuration. In cross-section geometry, we show that the vertical profile of the emission energy represents the Ga-profile in the film and, thus, we are able to measure the band-gap grading present by means of CL methods. At the same time, we observe a strong drift of excited charge carriers towards the minimum of the band-gap which can be explained by the Ga-grading. It is shown by voltage-dependent CL, how these results directly influence the interpretation of luminescence spectra obtained on Ga-graded Cu(In,Ga)Se{sub 2} and, thus, they will have to be considered as a basis for all forthcoming investigations on this topic.

Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

Science.gov (United States)

Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In ₂ O ₃ nanowires

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

2018-03-01

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study

KAUST Repository

Xiao, Zhen-Yu

2013-11-11

We report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55-1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu2ZnSnS4/Cu 2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers. © 2013 AIP Publishing LLC.

First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors

Energy Technology Data Exchange (ETDEWEB)

Kirk, Alexander P. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Kirk, Wiley P. [Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

2013-11-07

Direct bandgap InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P solar cells containing backside mirrors as well as parasitically absorbing substrates are analyzed for their limiting open circuit voltage and power conversion efficiency with comparison to record solar cells. From the principle of detailed balance, it is shown quantitatively that mirror solar cells have greater voltage and power conversion efficiency than their substrate counterparts. Next, the radiative recombination coefficient and maximum radiative lifetime of GaAs mirror and substrate solar cells are calculated and compared to the nonradiative Auger and Shockley-Read-Hall (SRH) lifetimes. Mirror solar cells have greater radiative lifetime than their substrate variants. Auger lifetime exceeds radiative lifetime for both substrate and mirror cells while SRH lifetime may be less or greater than radiative lifetime depending on trap concentration and capture cross section. Finally, the change in free energy of the photogenerated carriers is analyzed in a comparison between InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P mirror and substrate solar cells in order to characterize the relationship between solar photon quality and free energy management in solar cells with differing bandgaps. Wider bandgap visible threshold Ga{sub 0.5}In{sub 0.5}P solar cells make better use of the available change in free energy of the photogenerated charge carriers, even when normalized to the bandgap energy, than narrower bandgap near-IR threshold InP, GaAs, and CdTe solar cells.

Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap.

Science.gov (United States)

Li, Guopeng; Wang, Hui; Zhu, Zhifeng; Chang, Yajing; Zhang, Ting; Song, Zihang; Jiang, Yang

2016-09-13

Tetragonal CsPb 2 Br 5 nanosheets were obtained by an oriented attachment of orthorhombic CsPbBr 3 nanocubes, involving a lateral shape evolution from octagonal to square. Meanwhile, the experimental results, together with DFT simulation results, indicated that the tetragonal CsPb 2 Br 5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.

Direct Bandgap Group IV Materials

Science.gov (United States)

2016-01-21

AFRL-AFOSR-JP-TR-2017-0049 Direct Bandgap group IV Materials Hung Hsiang Cheng NATIONAL TAIWAN UNIVERSITY Final Report 01/21/2016 DISTRIBUTION A...NAME(S) AND ADDRESS(ES) NATIONAL TAIWAN UNIVERSITY 1 ROOSEVELT RD. SEC. 4 TAIPEI CITY, 10617 TW 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING...14. ABSTRACT Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices

Bandgap modulation in photoexcited topological insulator Bi{sub 2}Te{sub 3} via atomic displacements

Energy Technology Data Exchange (ETDEWEB)

Hada, Masaki, E-mail: hadamasaki@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Norimatsu, Katsura; Tsuruta, Tetsuya; Igarashi, Kyushiro; Kayanuma, Yosuke; Sasagawa, Takao; Nakamura, Kazutaka G. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Tanaka, Sei' ichi; Ishikawa, Tadahiko; Koshihara, Shin-ya [Department of Chemistry and Materials Science, Tokyo Institute of Technology, Tokyo 152-8551 (Japan); Keskin, Sercan [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Miller, R. J. Dwayne [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Departments of Chemistry and Physics, University of Toronto, Toronto M5S 3H6 (Canada); Onda, Ken [PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

2016-07-14

The atomic and electronic dynamics in the topological insulator (TI) Bi{sub 2}Te{sub 3} under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi{sub 2}Te{sub 3} trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

Coulomb engineering of the bandgap and excitons in two-dimensional materials

Science.gov (United States)

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; Arefe, Ghidewon; Hill, Heather M.; Rigosi, Albert F.; Berkelbach, Timothy C.; Nagler, Philipp; Schüller, Christian; Korn, Tobias; Nuckolls, Colin; Hone, James; Brus, Louis E.; Heinz, Tony F.; Reichman, David R.; Chernikov, Alexey

2017-01-01

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. PMID:28469178

Optical investigations on the wide bandgap semiconductors diamond and aluminum nitride

Energy Technology Data Exchange (ETDEWEB)

Teofilov, Nikolai

2007-07-01

In the context of this thesis, new results about optical defects and intrinsic properties of diamond, AlN and AlGaN alloys have been obtained. The main experimental techniques used were low temperature cathodoluminescence and photoluminescence spectroscopy. First, different aspects of intentional and background doping of diamond were discussed. Thus, the most commonly observed green luminescence emission from boron doped HPHT diamonds has been studied by means of temperature dependent CL in a wide temperature range from 10 K to 450 K. One further subject, addressing deep defect nitrogen related luminescence was a study of nitrogen addition in combustion flame grown CVD diamond layers. Two further topics concern intrinsic excitations in diamond, free excitons and electron-hole drops. Several important parameters like the critical density, the critical temperature, and the low-temperature density inside the drops were evaluated. The ground state density of the electron-hole condensate in diamond is about {approx} 42 times larger than that in Si, and the critical temperature takes very high values in the range of 165K.. 173K. Cathodoluminescence investigations on epitaxial wurtzite AlN layers grown on sapphire, SiC, and Si substrates, have shown that although the material is generally of good optical quality, deep level luminescence are still dominating the spectra. Relatively sharp near-band-edge transitions have been observed in all three samples that exhibit significantly reduced line widths for the AlN/sapphire and the AlN/SiC samples. Much broader emission lines in the near band-gap region have been observed for the first time from the AlN sample grown on Si (111) substrate. Temperature dependent CL measurements and numerical line decompositions reveal complicated substructures in the excitonic lines. The temperature dependence of the energy positions and broadening parameters of the transition have been studied and compared with the other materials. Epitaxial Al

Vacuum ultraviolet excited photoluminescence properties of Gd2O2CO3:Eu3+ phosphor

Institute of Scientific and Technical Information of China (English)

WANG Zhilong; WANG Yuhua; ZHANG Jiachi

2008-01-01

The Gd2O2CO3:Eu3+ with type-II structure phosphor was successfully synthesized via flux method at 400℃ and their photoluminescence properties in vacuum ultraviolet (VUV) region were examined. The broad and strong excitation bands in the range of 153-205 nm owing to the CO32- host absorption and charge transfer (CT) of Gd3+-O2- were observed for Gd2O2CO3:Eu3+. Under 172 nm excitation, Gd2O2CO3:Eu3+ exhibited strong red emission with good color purity, indicating Eu3+ ions located at low symmetry sites and the chromaticity coordination of luminescence for Gd2O2CO3:Eu3+ was (x=0.652, y=0.345). The photoluminescence quenching concentration of Eu3+ excited by 172 nm for Gd2O2CO3:Eu3+ was about 5%. Gd2O2CO3:Eu3+ would be a potential VUV-excited red phosphor applied in mercury-free fluorescent lamps.

A Direct Bandgap Copper-Antimony Halide Perovskite.

Science.gov (United States)

Vargas, Brenda; Ramos, Estrella; Pérez-Gutiérrez, Enrique; Alonso, Juan Carlos; Solis-Ibarra, Diego

2017-07-12

Since the establishment of perovskite solar cells (PSCs), there has been an intense search for alternative materials to replace lead and improve their stability toward moisture and light. As single-metal perovskite structures have yielded unsatisfactory performances, an alternative is the use of double perovskites that incorporate a combination of metals. To this day, only a handful of these compounds have been synthesized, but most of them have indirect bandgaps and/or do not have bandgaps energies well-suited for photovoltaic applications. Here we report the synthesis and characterization of a unique mixed metal ⟨111⟩-oriented layered perovskite, Cs 4 CuSb 2 Cl 12 (1), that incorporates Cu 2+ and Sb 3+ into layers that are three octahedra thick (n = 3). In addition to being made of abundant and nontoxic elements, we show that this material behaves as a semiconductor with a direct bandgap of 1.0 eV and its conductivity is 1 order of magnitude greater than that of MAPbI 3 (MA = methylammonium). Furthermore, 1 has high photo- and thermal-stability and is tolerant to humidity. We conclude that 1 is a promising material for photovoltaic applications and represents a new type of layered perovskite structure that incorporates metals in 2+ and 3+ oxidation states, thus significantly widening the possible combinations of metals to replace lead in PSCs.

Near-infrared photoluminescence in La0.98AlO3: 0.02Ln3+(Ln = Nd/Yb) for sensitization of c-Si solar cells

Science.gov (United States)

Sawala, N. S.; Koparkar, K. A.; Bajaj, N. S.; Omanwar, S. K.

2016-05-01

The host matrix LaAlO3 was synthesized by conventional solid state reaction method in which the Nd3+ ions and Yb3+ ions successfully doped at 2mol% concentrations. The phase purity was confirmed by X ray powder diffraction (XRD) method. The photoluminescence (PL) properties were studied by spectrophotometer in near infra red (NIR) and ultra violet visible (UV-VIS) region. The Nd3+ ion doped LaAlO3 converts a visible (VIS) green photon (587 nm) into near infrared (NIR) photon (1070 nm) while Yb3+ ion doped converts ultra violet (UV) photon (221 nm) into NIR photon (980 nm). The La0.98AlO3: 0.02Ln3+(Ln = Nd / Yb) can be potentiality used for betterment of photovoltaic (PV) technology. This result further indicates its potential application as a luminescence converter layer for enhancing solar cells performance.

Photoluminescence studies on Cd(1-x)Zn(x)S:Mn2+ nanocrystals.

Science.gov (United States)

Sethi, Ruchi; Kumar, Lokendra; Pandey, A C

2009-09-01

Highly monodispersed, undoped and doped with Mn2+, binary and ternary (CdS, ZnS, Cd(1-x)Zn(x)S) compound semiconductor nanocrystals have been synthesized by co-precipitation method using citric acid as a stabilizer. As prepared sample are characterized by X-ray diffraction, Small angle X-ray scattering, Transmission electron microscope, Optical absorption and Photoluminescence spectroscopy, for their optical and structural properties. X-ray diffraction, Small angle X-ray scattering and Transmission electron microscope results confirm the preparation of monodispersed nanocrystals. Photoluminescence studies show a significant blue shift in the wavelength with an increasing concentration of Zn in alloy nanocrystals.

True photonic band-gap mode-control in VCSEL structures

DEFF Research Database (Denmark)

Romstad, F.; Madsen, M.; Birkedal, Dan

2003-01-01

Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

CVD grown 2D MoS{sub 2} layers: A photoluminescence and fluorescence lifetime imaging study

Energy Technology Data Exchange (ETDEWEB)

Oezden, Ayberk; Madenoglu, Buesra [Department of Materials Science and Engineering, Faculty of Engineering, Anadolu University, Eskisehir (Turkey); Sar, Hueseyin; Ay, Feridun; Perkgoez, Nihan Kosku [Department of Electrical and Electronics Engineering, Faculty of Engineering, Anadolu University, Eskisehir (Turkey); Yeltik, Aydan [Department of Physics, UNAM Institute of Materials Science and Nanotechnology, Bilkent University, Ankara (Turkey); Sevik, Cem [Department of Mechanical Engineering, Faculty of Engineering, Anadolu University, Eskisehir (Turkey)

2016-11-15

In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS{sub 2}. μ-Raman, μ-photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS{sub 2} films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain-boundaries. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Structural phase analysis and photoluminescence properties of Mg-doped TiO2 nanoparticles

Science.gov (United States)

Ali, T.; Ashraf, M. Anas; Ali, S. Asad; Ahmed, Ateeq; Tripathi, P.

2018-05-01

In this paper, we report the synthesis, characterization and photoluminescence properties of Mg-doped TiO2 nanoparticles (NPs). The samples were synthesized by sol-gel method and characterized using the standard analytical techniques such as X-ray diffraction (XRD), Transmission electron microscope (TEM), Energy dispersive X-ray spectroscopy (EDX), UV-visible and photoluminescence spectroscopy. The powder XRD spectra revealed that the synthesized samples are pure and crystalline in nature and showing tetragonal anatase phase of TiO2 NPs. UV-visible spectrum illustrates that an absorption edge shifts toward the visible region. This study may provide a new insight for making the nanomaterials which can be used in photocatalytic applications.

Band-gap narrowing of TiO2 films induced by N-doping

International Nuclear Information System (INIS)

Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y.

2006-01-01

N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 o C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from X-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at 1.18 and 2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N-doping and contributes to band-gap narrowing by mixing with the O 2p valence band

Band-gap creation by icosahedral symmetry in nearly-free-electron materials

International Nuclear Information System (INIS)

Carlsson, A.E.

1993-01-01

A series of numerical electronic density-of-states calculations is performed for rational approximants to a model one-electron potential based on icosahedrally arranged plane-wave components. It is found that high-order approximants can have band gaps even if the low-order approximants do not; furthermore, the magnitude of the gap increases with the order of the approximant. The results are interpreted via a two- and three-wave analysis of the energy eigenvalues at the pseudo-Jones-zone faces and edges. It is also found that the mechanism of band-gap reduction in the rational approximants is the presence of a small density of gap states. An analytic calculation shows that these gap states result from a splitting of threefold and pseudothreefold states at the valence-band edge when the icosahedral symmetry is broken. The splitting is proportional to the error with which the ratio between the approximant indices approximates τ, the golden mean. Finally, an application to the AlCuLi system is presented

Bandgap Optimization of Perovskite Semiconductors for Photovoltaic Applications.

Science.gov (United States)

Xiao, Zewen; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio; Padture, Nitin P

2018-02-16

The bandgap is the most important physical property that determines the potential of semiconductors for photovoltaic (PV) applications. This Minireview discusses the parameters affecting the bandgap of perovskite semiconductors that are being widely studied for PV applications, and the recent progress in the optimization of the bandgaps of these materials. Perspectives are also provided for guiding future research in this area. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence of Mg{sub 2}Si films fabricated by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Liao, Yang-Fang [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Xie, Quan, E-mail: qxie@gzu.edu.cn [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xiao, Qing-Quan [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities, Anshun 561000 (China); Chen, Qian; Fan, Meng-Hui [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xie, Jing [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China)

2017-05-01

Highlights: • High quality Mg{sub 2}Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg{sub 2}Si films was reported. • The Mg{sub 2}Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg{sub 2}Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg{sub 2}Si-based light-emitting devices, Mg{sub 2}Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg{sub 2}Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg{sub 2}Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg{sub 2}Si film on Si (111) displays polycrystalline structure, whereas Mg{sub 2}Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg{sub 2}Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg{sub 2}Si films was observed for the first time. The PL emission wavelengths of Mg{sub 2}Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg{sub 2}Si films on glass substrate is much larger than that of Mg

Size-dependent and intra-band photoluminescence of NiS2 nano-alloys synthesized by microwave assisted hydrothermal technique

International Nuclear Information System (INIS)

Linganiso, Ella Cebisa; Mhlanga, Sabelo Dalton; Coville, Neil John; Mwakikunga, Bonex Wakufwa

2013-01-01

Graphical abstract: Unexpected ultra-violet (UV) emission as well as near infra-red (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions due to the smaller crystallite size of the capped NiS 2 nanostructures was also observed. Band energy and local density of states calculation for NiS 2 were used to support the experimentally observed luminescence results. The luminescence features at wavelengths of 400 nm (3.10 eV), 428 nm (2.90 eV), 447 nm (2.77 eV) and 464 nm (2.67) can be attributed to some of those electrons de-exciting from S (3p) levels down to the Ni (3d) (blue to UV emission) whereas those features at wavelengths of 710 nm (1.75 eV), 751 nm (1.65 eV), 754 nm (1.64 eV) [NiS 2 /HDA-capped NiS 2 ] and 784 nm (1.58 eV) respectively seem to result from de-excitations between either Ni(3d) or S (3s, 3p) levels and Ni–S hybridization levels (red to near IR emission). Highlights: ► Rapid solid state alloying of Ni and S from their liquid state precursor by microwaves. ► New photoluminescence data of NiS 2 system. ► Unexpected luminescence in the UV–Visible and near IR ranges for such a metal matrix alloy. ► Explanation of NiS 2 photoluminescence from ab initio calculations by electronic energy band structure and density of states. -- Abstract: Synthesis of nickel disulfide (NiS 2 ) nano-alloys capped and uncapped with hexadecylamine (HDA) was carried out. A cubic phase NiS 2 formation was confirmed by X-ray diffraction (XRD) analysis. An average crystallite size of 35 nm was obtained for the uncapped nanostructures and 9 nm was obtained for the capped nanostructures estimated using the Scherrer equation. Unexpected ultra-violet (UV) emission as well as near infrared (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions

Considerable photoluminescence enhancement of LiEu(MoO4)2 red phosphors via Bi and/or Si doping for white LEDs

International Nuclear Information System (INIS)

Wang, Qing-Feng; Liu, Ying; Wang, Yu; Wang, Wenxi; Wan, Yi; Wang, Gui-Gen; Lu, Zhou-Guang

2015-01-01

Graphical abstract: Doping of Bi and Si into the lattice leads to an considerable increase of the excitation efficiency and luminous intensity, and obvious movement of the CIE chromaticity coordinates to the NTSC standard values of the LiEu(MoO 4 ) 2 , a promising red phosphors suitable for near UV excited white-light emitting diodes. - Highlights: • High performance red phosphors for near UV light excited white LEDs. • Lithium lanthanide molybdate red phosphors. • Bi and Si substitution. • Considerable enhancement of luminescence intensity and excitation efficiency. • CIE chromaticity coordinates very close to the NTSC standard values. - Abstract: Novel Bi and/or Si substituted LiEu(MoO 4 ) 2 phosphors, where Bi was used as sensitizer to enhance the emission intensity and Si was used as substitution to improve the excitation efficiency, were prepared using the sol–gel method, and the photoluminescent properties of the resulting phosphors were intensively investigated. All samples can be excited efficiently by UV (395 nm) light and emit bright red light at 614 nm, which are coupled well with the characteristic emission from a UV-LED. In the Bi 3+ -doped samples, the intensities of the main emission line ( 5 D 0 – 7 F 2 transition at 614 nm) are strengthened because of the energy transition from Bi 3+ to Eu 3+ . With the substitution of Mo 4+ by Si 4+ , there are no significant changes in the emission peak positions, but the emission intensity was significantly enhanced under 395 nm excitation. Particularly, the LiEu 0.9 Bi 0.1 (Mo 0.97 Si 0.03 O 4 ) 2 phosphor doped with both Bi and Si demonstrates superior comprehensive photoluminescence properties with an excellent combination of easy excitation in the near UV range, bright emission intensity, high PL quantum efficiency as well as suitable decay time, which are very suitable for application as red phosphor for near UV type LEDs

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

KAUST Repository

Huang, Yu Li

2015-02-17

Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

Synthesis and photoluminescence characteristics of (Y,Gd)BO3:RE (RE = Eu(3+), Ce(3+), Dy(3+) and Tb(3+)) phosphors for blue chip and near-UV white LEDs.

Science.gov (United States)

Rangari, V V; Singh, V; Dhoble, S J

2016-03-01

A series of Eu(3+)-, Ce(3+)-, Dy(3+)- and Tb(3+)-doped (Y,Gd)BO3 phosphors was synthesized by a solid-state diffusion method. X-Ray diffraction confirmed their hexagonal structure and the scanning electron microscopy results showed crystalline particles. The excitation spectra revealed that (Y,Gd)BO3 phosphors doped with Eu(3+), Ce(3+), Dy(3+) and Tb(3+) are effectively excited with near UV-light of 395 nm/blue light, 364, 351 and 314 nm, respectively. Photoluminescence spectra of Eu(3+)-, Ce(3+)- and Tb(3+)/Dy(3+)-doped phosphor showed intense emission of reddish orange, blue and white light, respectively. The phosphor Y0.60Gd0.38BO3:Ce0.02 showed CIE 1931 color coordinates of (0.158, 0.031) and better color purity compared with commercially available blue BAM:Eu(2+) phosphor. The phosphor (Y,Gd)BO3 doped with Eu(3+), Dy(3+) and Tb(3+) showed CIE 1931 color coordinates of (0.667, 0.332), (0.251, 0.299) and (0.333, 0.391) respectively. Significant photoluminescence characteristics of the prepared phosphors indicate that they might serve as potential candidates for blue chip and near-UV white light-emitting diode applications. Copyright © 2015 John Wiley & Sons, Ltd.

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Directory of Open Access Journals (Sweden)

Chunfu Zhang

2016-01-01

Full Text Available Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to-roll process. Power conversion efficiency (PCE of the inverted device reaches 7.12%, which is near the control conventional device. More importantly, the inverted device shows a better stability, keeping more than 90% of its original PCE after being stored for 625 hours, while PCE of the conventional device is only 75% of what it was. In addition, it is found that the ZnO thin film annealed in N2 can obviously increase PCE of the inverted device further to 7.26%.

Hyperuniform Disordered photonic bandgap materials, from 2D to 3D, and their applications

Science.gov (United States)

Man, Weining; Florescu, Marian; Sahba, Shervin; Sellers, Steven

Recently, hyperuniform disordered systems attracted increasing attention due to their unique physical properties and the potential possibilities of self-assembling them. We had introduced a class of 2D hyperuniform disordered (HUD) photonic bandgap (PBG) materials enabled by a novel constrained optimization method for engineering the material's isotropic photonic bandgap. The intrinsic isotropy in these disordered structures is an inherent advantage associated with the lack of crystalline order, offering unprecedented freedom for functional defect design impossible to achieve in photonic crystals. Beyond our previous experimental work using macroscopic samples with microwave radiation, we demonstrated functional devices based on submicron-scale planar hyperuniform disordered PBG structures further highlight their ability to serve as highly compact, flexible and energy-efficient platforms for photonic integrated circuits. We further extended the design, fabrication, and characterization of the disordered photonic system into 3D. We also identify local self-uniformity as a novel measure of a disordered network's internal structural similarity, which we found crucial for photonic band gap formation. National Science Foundations award DMR-1308084.

Local microstructure and photoluminescence of Er-doped 12CaO·7Al2O3 powder

Institute of Scientific and Technical Information of China (English)

WANG Dan; LIU Yuxue; XU Changshan; LIU Yichun; WANG Guorui; LI Xinghua

2008-01-01

Er-doped 12CaO·7Al2O3 (C12A7:Er) powders were prepared using the sol-gel method followed by annealing inorganic precursors. X-ray diffraction (XRD), Raman and absorption spectra revealed that Er ions existed and substituted Ca2+ lattice site in C12A7. The photoluminescence of C12A7:Er at room temperature was observed in the visible and infrared region using 488 nm (2.54 eV) Ar+ line as excitation source, respectively. The sharp and intense green emission bands with multi-peaks around 520 nm and 550 nm correspond to the transitions from the excited states 2H11/2 and 4S3/2 to the ground state 4I15/2, respectively. Furthermore, red emission band around 650 nm was also observed. It was attributed to the electronic transition from excited states 4F9/2 to the ground state 4I15/2 inside 4f-shell of Er3+ ions. The intensive infrared emission at 1.54μm was attributed to the transition from the first excited states of 4I13/2 to the ground state (4I15/2). The temperature dependent photoluminescence of infrared emission showed that the integrated intensity reached a maximum value at near room temperature. The forbidden transitions of intra-4f shell electrons in free Er3+ ions were allowed in C12A7 owing to lack of the inversion symmetry in the Er3+ position in C12A7 crystal field. Our results suggested that C12A7:Er was a candidate for applications in Er-doped laser materials, and full color display.

Structural, morphological, optical and photoluminescence properties of HfO2 thin films

International Nuclear Information System (INIS)

Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

2013-01-01

Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

Water-dependent photonic bandgap in silica artificial opals.

Science.gov (United States)

Gallego-Gómez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; López, Cefe

2011-07-04

Some characteristics of silica--based structures-like the photonic properties of artificial opals formed by silica spheres--can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is particularly surprising, because water desorption increases the refractive index contrast, which should lead instead to bandgap broadening. A quantitative explanation of this experiment is provided using a simple model for water distribution in the opal that assumes a nonclose-packed fcc structure. This model further predicts that, at room temperature, about 50% of the interstitial water forms necks between nearest-neighbor spheres, which are separated by 5% of their diameter. Upon heating, dehydration predominantly occurs at the sphere surfaces (in the opal voids), so that above 65 °C the remaining water resides exclusively in the necks. A near-close-packed fcc arrangement is only achieved above 200 °C. The high sensitivity to water changes exhibited by silica opals, even under gentle heating of few degrees, must be taken into account for practical applications. Remarkably, accurate control of the distance between spheres--from 16 to 1 nm--is obtained with temperature. In this study, novel use of the optical properties of the opal is made to infer quantitative information about water distribution within silica beads and dehydration phenomena from simple reflection spectra. Taking advantage of the well-defined opal morphology, this approach offers a simple tool for the straightforward investigation of generic adsorption-desorption phenomena, which might be extrapolated to many other fields involving capillary condensation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGa

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Science.gov (United States)

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Blue photoluminescent carbon nanodots from limeade

Energy Technology Data Exchange (ETDEWEB)

Suvarnaphaet, Phitsini [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Tiwary, Chandra Sekhar [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Wetcharungsri, Jutaphet; Porntheeraphat, Supanit [NECTEC, National Science and Technology Development Agency (NSTDA), Thailand Science Park, Pathumthani 12120 (Thailand); Hoonsawat, Rassmidara [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Ajayan, Pulickel Madhavapanicker [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Tang, I-Ming [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); Department of Material Science, Faculty of Science, Kasetsart University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Asanithi, Piyapong, E-mail: asanithi@hotmail.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand)

2016-12-01

Carbon-based photoluminescent nanodot has currently been one of the promising materials for various applications. The remaining challenges are the carbon sources and the simple synthetic processes that enhance the quantum yield, photostability and biocompatibility of the nanodots. In this work, the synthesis of blue photoluminescent carbon nanodots from limeade via a single-step hydrothermal carbonization process is presented. Lime carbon nanodot (L-CnD), whose the quantum yield exceeding 50% for the 490 nm emission in gram-scale amounts, has the structure of graphene core functionalized with the oxygen functional groups. The micron-sized flake of the as-prepared L-CnD powder exhibits multicolor emission depending on an excitation wavelength. The L-CnDs are demonstrated for rapidly ferric-ion (Fe{sup 3+}) detection in water compared to Fe{sup 2+}, Cu{sup 2+}, Co{sup 2+}, Zn{sup 2+}, Mn{sup 2+} and Ni{sup 2+} ions. The photoluminescence quenching of L-CnD solution under UV light is used to distinguish the Fe{sup 3+} ions from others by naked eyes as low concentration as 100 μM. Additionally, L-CnDs provide exceptional photostability and biocompatibility for imaging yeast cell morphology. Changes in morphology of living yeast cells, i.e. cell shape variation, and budding, can be observed in a minute-period until more than an hour without the photoluminescent intensity loss. - Highlights: • Photoluminescent carbon nanodots are synthesized from limeade. • The quantum yield of lime carbon nanodots is higher than 50%. • The lime carbon nanodots can be applied for detecting of Fe{sup 3+} ions and for imaging living yeast cells.

Investigation of the photoluminescence properties of thermochemically synthesized CdS nanocrystals

Directory of Open Access Journals (Sweden)

M. Molaei

2011-03-01

Full Text Available In this work we have synthesized CdS nanocrystals with thermochemical method. CdSO4 and Na2S2O3 were used as the precursors and thioglycolic acid (TGA was used as capping agent molecule. The structure and optical property of the nanocrystals were characterized by means of XRD, TEM, UV-visible optical spectroscopy and photoluminescence (PL. X-ray diffraction (XRD and TEM analyses demonstrated hexagonal phase CdS nanocrystals with an average size around 2 nm. Synthesized nanocrystals exhibited band gap of about 3.2 eV and showed a broad band emission from 400-750 nm centered at 504 nm with a (0.27, 0.39 CIE coordinate. This emission can be attributed to recombination of an electron in conduction band with a hole trapped in Cd vacancies near to the valance band of CdS. The best attained photoluminescence quantum yield of the nanocrystals was about 12%, this amount is about 20 times higher than that for thioglycerol (TG capped CdS nanocrystals.

Tailoring the Energy Landscape in Quasi-2D Halide Perovskites Enables Efficient Green-Light Emission

KAUST Repository

Quan, Li Na; Zhao, Yongbiao; Garcí a de Arquer, F. Pelayo; Sabatini, Randy; Walters, Grant; Voznyy, Oleksandr; Comin, Riccardo; Li, Yiying; Fan, James Z.; Tan, Hairen; Pan, Jun; Yuan, Mingjian; Bakr, Osman; Lu, Zhenghong; Kim, Dong Ha; Sargent, Edward H.

2017-01-01

Organo-metal halide perovskites are a promising platform for optoelectronic applications in view of their excellent charge-transport and bandgap tunability. However, their low photoluminescence quantum efficiencies, especially in low-excitation regimes, limit their efficiency for light emission. Consequently, perovskite light-emitting devices are operated under high injection, a regime under which the materials have so far been unstable. Here we show that, by concentrating photoexcited states into a small subpopulation of radiative domains, one can achieve a high quantum yield, even at low excitation intensities. We tailor the composition of quasi-2D perovskites to direct the energy transfer into the lowest-bandgap minority phase and to do so faster than it is lost to nonradiative centers. The new material exhibits 60% photoluminescence quantum yield at excitation intensities as low as 1.8 mW/cm2, yielding a ratio of quantum yield to excitation intensity of 0.3 cm2/mW; this represents a decrease of 2 orders of magnitude in the excitation power required to reach high efficiency compared with the best prior reports. Using this strategy, we report light-emitting diodes with external quantum efficiencies of 7.4% and a high luminescence of 8400 cd/m2.

Tailoring the Energy Landscape in Quasi-2D Halide Perovskites Enables Efficient Green-Light Emission

KAUST Repository

Quan, Li Na

2017-05-10

Organo-metal halide perovskites are a promising platform for optoelectronic applications in view of their excellent charge-transport and bandgap tunability. However, their low photoluminescence quantum efficiencies, especially in low-excitation regimes, limit their efficiency for light emission. Consequently, perovskite light-emitting devices are operated under high injection, a regime under which the materials have so far been unstable. Here we show that, by concentrating photoexcited states into a small subpopulation of radiative domains, one can achieve a high quantum yield, even at low excitation intensities. We tailor the composition of quasi-2D perovskites to direct the energy transfer into the lowest-bandgap minority phase and to do so faster than it is lost to nonradiative centers. The new material exhibits 60% photoluminescence quantum yield at excitation intensities as low as 1.8 mW/cm2, yielding a ratio of quantum yield to excitation intensity of 0.3 cm2/mW; this represents a decrease of 2 orders of magnitude in the excitation power required to reach high efficiency compared with the best prior reports. Using this strategy, we report light-emitting diodes with external quantum efficiencies of 7.4% and a high luminescence of 8400 cd/m2.

Bandgap measurements and the peculiar splitting of E{sub 2}{sup H} phonon modes of In{sub x}Al{sub 1-x}N nanowires grown by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Prabaswara, Aditya; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Anjum, Dalaver H.; Yang, Yang [Adavanced nanofabrication Imaging and characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M. [National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086 (Saudi Arabia)

2016-07-28

The dislocation free In{sub x}Al{sub 1-x}N nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of In{sub x}Al{sub 1-x}N NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A{sub 1}(LO) phonons and single mode behavior for E{sub 2}{sup H} phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E{sub 2}{sup H} phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A{sub 1}(LO) and E{sub 2}{sup H} phonons in In{sub x}Al{sub 1-x}N NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important In{sub x}Al{sub 1-x}N nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

Synthesis, structure, optical, photoluminescence and magnetic properties of K2[Co(C2O4)2(H2O)2]·4H2O

Science.gov (United States)

Narsimhulu, M.; Hussain, K. A.

2018-06-01

The synthesis, crystal structure, optical, photoluminescence and magnetic behaviour of potassium bis(oxalato)cobaltate(II)tertrahydrate{K2[Co(C2O4)2(H2O)2]·4H2O} are described. The compound was grown at room temperature from mixture of aqueous solutions by slow evaporation method. The X-ray crystallographic data showed that the compound belongs to the monoclinic crystal system with P21/n space group and Z = 4. The UV-visible diffuse absorbance spectra exhibited bands at 253, 285 and 541 nm in the visible and ultraviolet regions. The optical band gap of the compound was estimated as 3.4 eV. At room temperature, an intense photoluminescence was observed from this material around 392 nm when it excited at 254 nm. The variable temperature dc magnetic susceptibility measurements exposed paramagnetic behaviour at high temperatures and antiferromagnetic ordering at low temperatures.

Terahertz spectroscopy of three-dimensional photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Ho, K.M.; Bostak, J.; Bloom, D.M.

1994-01-01

We have fabricated and built three-dimensional photonic band-gap crystals with band-gap frequencies larger than 500 GHz. We built the crystals by stacking micromachined (110) silicon wafers. The transmission and dispersion characteristics of the structures were measured by an all-electronic terahertz spectroscopy setup. The experimental results were in good agreement with theoretical calculations. To our knowledge, our new crystal has the highest reported photonic band-gap frequency

Improved photoluminescence properties of a new green SrB2O4:Tb3+ phosphor by charge compensation

International Nuclear Information System (INIS)

Wu, Zhan-Chao; Wang, Ping; Liu, Jie; Li, Chao; Zhou, Wen-Hui; Kuang, Shao-Ping

2012-01-01

Highlights: ► New green-emitting SrB 2 O 4 :Tb 3+ phosphor was synthesized by solid-state reaction. ► Li + , Na + , and K + can all increase luminescent intensity of SrB 2 O 4 :Tb 3+ . ► Na + is the optimal charge compensator among Li + , Na + and K + . ► SrB 2 O 4 :Tb 3+ is a promising green phosphor for fabricating WLED. -- Abstract: A new green-emitting SrB 2 O 4 :Tb 3+ phosphor was synthesized by solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed all the samples with orthorhombic formation of SrB 2 O 4 . The excitation spectra indicate the phosphor can be effectively excited by near ultraviolet (NUV) light, making it attractive as conversion phosphor for LED applications. The phosphor exhibits a bright green emission with the highest photoluminescence (PL) intensity at 544 nm excited by 378 nm light. The critical quenching concentration of Tb 3+ in SrB 2 O 4 :Tb 3+ is about 10 mol%. The effects of charge compensators (Li + , Na + , and K + ) on photoluminescence of SrB 2 O 4 :Tb 3+ were also studied. The results show that the emission intensity can be improved by all the three charge compensators and Na + is the optimal one for SrB 2 O 4 :Tb 3+ . All properties show that the phosphor is a promising green phosphor pumped by NUV InGaN chip for fabricating white light-emitting diodes (WLEDs).

Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

National Research Council Canada - National Science Library

Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

2002-01-01

The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

Photoluminescence properties of La{sub 2x}Ga{sub 2y}In{sub 2z}O{sub 3} solid solutions used as photocatalysts for water splitting and promising panchromatic emitters

Energy Technology Data Exchange (ETDEWEB)

Penconi, Marta; Cesaretti, Alessio [Dipartimento di Chimica, Biologia e Biotecnologie, Università di Perugia, Via Elce di Sotto 8, 06123 Perugia (Italy); Ortica, Fausto [Dipartimento di Chimica, Biologia e Biotecnologie, Università di Perugia, Via Elce di Sotto 8, 06123 Perugia (Italy); CEMIN, Via Elce di Sotto 8, 06123 Perugia (Italy); CIRIAF, Via G. Duranti 67, 06125 Perugia (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Perugia, Via Pascoli, 06123 Perugia (Italy); Elisei, Fausto [Dipartimento di Chimica, Biologia e Biotecnologie, Università di Perugia, Via Elce di Sotto 8, 06123 Perugia (Italy); CEMIN, Via Elce di Sotto 8, 06123 Perugia (Italy); CIRIAF, Via G. Duranti 67, 06125 Perugia (Italy); Gentili, Pier Luigi, E-mail: pierluigi.gentili@unipg.it [Dipartimento di Chimica, Biologia e Biotecnologie, Università di Perugia, Via Elce di Sotto 8, 06123 Perugia (Italy); CIRIAF, Via G. Duranti 67, 06125 Perugia (Italy)

2016-09-15

The steady-state and time-resolved photoluminescence of nine ternary solid solutions, whose general formula is La{sub 2x}Ga{sub 2y}In{sub 2z}O{sub 3}, used as heterogeneous photocatalysts for the production of hydrogen by water splitting, has been investigated in order to characterize the properties of their electronic excited states. The comparison with the parent binary oxides (LaGaO{sub 3}, LaInO{sub 3} and GaInO{sub 3}) proved to be essential for understanding the composition of the solids in terms of phases and allowed the different emissions to be assigned to specific crystal structures and band gap transitions. Upholding what was previously deduced by means of the X-ray powder diffraction and micro-Raman techniques, the structural properties of the La{sub 2x}Ga{sub 2y}In{sub 2z}O{sub 3} samples were corroborated. By doing so, the employment of photoluminescence as a distinctive feature to strengthen the structural information gathered by other techniques is demonstrated. Moreover, the luminescence lifetimes of the photo-generated electron–hole pairs were measured and analyzed in view of the photocatalytic activity of the samples, with their efficiency being directly proportional to the excited state lifetime. Finally, the metal oxides solid solutions have been found able to emit over the entire visible region up to near-IR. Therefore, they might be appealing panchromatic emitters for display and lightning technologies. - Highlights: • The photoluminescence is useful to gain insight on structural composition of solid solutions. • Determination of electronic lifetimes by both Least-Squares and Maximum Entropy method. • Direct electronic transitions last less than indirect phonon-assisted transitions. • La{sub 2x}Ga{sub 2y}In{sub 2z}O{sub 3} are promising panchromatic emitters. • La{sub 2x}Ga{sub 2y}In{sub 2z}O{sub 3} have lifetimes ranging from tens of μs up to tens of ms.

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2015-09-14

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

A study of photoluminescence and micro-Raman scattering in C-implanted GaN

International Nuclear Information System (INIS)

Zhang Limin; Zhang Xiaodong; Liu Zhengmin

2010-01-01

GaN samples (no yellow luminescence) in their as-grown states were implanted with 10 13 -10 17 C ions/cm 2 and studied by photoluminescence spectra and micro-Raman scattering spectra. The photoluminescence study showed that yellow luminescence were produced in the C-implanted GaN after 950 degree C annealing, and the peaks of the near band edge emissions showed blue-shifts after C implantation. The Raman measurements indicated that the stresses in GaN films did not change after C implantation. The samples implanted with 10 15 cm -2 carbon ions had the Raman peak at 300 cm -1 , which is associated to the disorder-activated Raman scattering. However, further increasing the implantation dose resulted decreased intensity of the 300 cm -1 peak, due to the ion beam current increase with the implantation dose. (authors)

Two-dimensional Kagome photonic bandgap waveguide

DEFF Research Database (Denmark)

Nielsen, Jens Bo; Søndergaard, Thomas; Libori, Stig E. Barkou

2000-01-01

The transverse-magnetic photonic-bandgap-guidance properties are investigated for a planar two-dimensional (2-D) Kagome waveguide configuration using a full-vectorial plane-wave-expansion method. Single-moded well-localized low-index guided modes are found. The localization of the optical modes...... is investigated with respect to the width of the 2-D Kagome waveguide, and the number of modes existing for specific frequencies and waveguide widths is mapped out....

The influence of nitrogen on the photoluminescence of metastable III-V nitrides

International Nuclear Information System (INIS)

Hantke, K.

2005-01-01

The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

Bandgap tuning with thermal residual stresses induced in a quantum dot.

Science.gov (United States)

Kong, Eui-Hyun; Joo, Soo-Hyun; Park, Hyun-Jin; Song, Seungwoo; Chang, Yong-June; Kim, Hyoung Seop; Jang, Hyun Myung

2014-09-24

Lattice distortion induced by residual stresses can alter electronic and mechanical properties of materials significantly. Herein, a novel way of the bandgap tuning in a quantum dot (QD) by lattice distortion is presented using 4-nm-sized CdS QDs grown on a TiO2 particle as an application example. The bandgap tuning (from 2.74 eV to 2.49 eV) of a CdS QD is achieved by suitably adjusting the degree of lattice distortion in a QD via the tensile residual stresses which arise from the difference in thermal expansion coefficients between CdS and TiO2. The idea of bandgap tuning is then applied to QD-sensitized solar cells, achieving ≈60% increase in the power conversion efficiency by controlling the degree of thermal residual stress. Since the present methodology is not limited to a specific QD system, it will potentially pave a way to unexplored quantum effects in various QD-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.; Reeves, R.J.; Kennedy, J.; Fang, F.

2013-01-01

Nanocrystals of PbSe have been fabricated in a silicon dioxide matrix by sequential low energy ion implantation followed by an electron beam annealing step. Transmission electron microscopy reveals PbSe nanocrystals with typical sizes between 3 and 10 nm in the sub-surface region. Rutherford Backscattering Spectrometry has been used to study the total atomic retention, as a function of implanted atoms, following annealing. Photoluminescence was observed in various samples, at 4 K, as a broad peak between 1.4 and 2.0 μm, with observation of a dependence of the peak wavelength on annealing temperature. Room temperature photoluminescence was observed for samples with a high retention of implanted atoms, demonstrating the importance of nanocrystal density for achieving ambient temperature emission in these systems

Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

Science.gov (United States)

Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

2017-12-01

Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys

Energy Technology Data Exchange (ETDEWEB)

Wendav, Torsten, E-mail: wendav@physik.hu-berlin.de [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Fischer, Inga A.; Oehme, Michael; Schulze, Jörg [Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Montanari, Michele; Zoellner, Marvin Hartwig; Klesse, Wolfgang [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Capellini, Giovanni [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma (Italy); Driesch, Nils von den; Buca, Dan [Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich (Germany); Busch, Kurt [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin (Germany)

2016-06-13

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

2016-12-05

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH2)2PbI3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

2016-12-05

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH₂)₂PbI₃) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

Investigation into the applicability of Bond Work Index (BWI) and Hardgrove Grindability Index (HGI) tests for several biomasses compared to Colombian La Loma coal

OpenAIRE

Williams, Orla; Eastwick, Carol; Kingman, Sam; Giddings, Donald; Lormor, Stephen; Lester, Edward

2015-01-01

With increasing quantities of biomass being combusted in coal fired power stations, there is an urgent need to be able to predict the grindability of biomass in existing coal mills, but currently no standard biomass grindability test exists. In this study, the applicability of the Hardgrove Grindability Index (HGI) and Bond Work Index (BWI) as standard grindability tests for biomass were investigated for commercially sourced wood pellets, steam exploded pellets, torrefied pellets, sunflower p...

Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

International Nuclear Information System (INIS)

Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

2006-01-01

Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

International Nuclear Information System (INIS)

Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

2002-01-01

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

Synthesis and photoluminescence enhancement of PVA capped Mn2+ doped ZnS nanoparticles and observation of tunable dual emission: A new approach

International Nuclear Information System (INIS)

Viswanath, R.; Bhojya Naik, H.S.; Yashavanth Kumar, G.S.; Prashanth Kumar, P.N.; Harish, K.N.; Prabhakara, M.C.; Praveen, R.

2014-01-01

Highlights: • Synthesis of PVA capped Mn 2+ doped ZnS nanoparticles by chemical precipitation method in air atmosphere. • Characterized by the spectral techniques. • Study on their optical properties. • Calculation of particle size by different techniques. • Investigation of the increased luminescence characteristics (UV to IR region) of Mn 2+ doped ZnS ions at room temperature and the origin of the luminescence observed. - Abstract: This paper reports the enhanced photoluminescence (PL) property of polyvinyl alcohol (PVA) capped Mn 2+ doped ZnS nanocrystals prepared by chemical precipitation method. The surface-modified Mn 2+ doped ZnS nanocrystals resulted in the multi-color property. The morphology and crystallite size were characterized by field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) techniques. The crystallite size was estimated to be 5 nm from HRTEM and calculated as 2–4 nm from peak broadening of the X-ray diffraction (XRD) pattern with cubic zincblende structure. Increase in the band gap with decrease in the crystallite size was observed from the UV–visible absorption spectrum, which confirms the quantum confinement effect. The room temperature photoluminescence (PL) emission measurements revealed the presence of blue (427 nm) and near IR reddish–orange (752 nm) emission bands in addition to the typical yellow–orange (585 nm) bands in all the Mn 2+ doped samples, which were attributed due to transition within the 3ds configuration of Mn 2+ ions incorporation in ZnS host under UV excitation at 320 nm. As far as we know, the reddish–orange bands at 752 nm near IR region along with the blue and yellow–orange colored PL are reported for the first time. In this way, the PL color from these ZnS nanocrystals can be tuned from UV to near infrared region (IR). The synthesized ZnS:Mn NPs can be further functionalized for using them as biolabels

Electrically tunable liquid crystal photonic bandgap fiber laser

DEFF Research Database (Denmark)

Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei

2010-01-01

We demonstrate electrical tunability of a fiber laser by using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate an al...

Optimal design of lossy bandgap structures

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard

2004-01-01

The method of topology optimization is used to design structures for wave propagation with one lossy material component. Optimized designs for scalar elastic waves are presented for mininimum wave transmission as well as for maximum wave energy dissipation. The structures that are obtained...... are of the 1D or 2D bandgap type depending on the objective and the material parameters....

Photoluminescence and thermoluminescence properties of BaGa2O4

Science.gov (United States)

Noto, L. L.; Poelman, D.; Orante-Barrón, V. R.; Swart, H. C.; Mathevula, L. E.; Nyenge, R.; Chithambo, M.; Mothudi, B. M.; Dhlamini, M. S.

2018-04-01

Rare-Earth free luminescent materials are fast becoming important as the cost of rare earth ions gradually increases. In this work, a Rare-Earth free BaGa2O4 luminescent compound was prepared by solid state chemical reaction, which was confirmed to have a single phase by X-ray Diffraction. The Backscattered Electron image and Energy Dispersive X-ray spectroscopy maps confirmed irregular particle and homogeneous compound formation, respectively. The Photoluminescence spectrum displayed broad emission between 350 to 650 nm, which was deconvoluted into two components. The photoluminescence excitation peak was positioned at 254 nm, which corresponds with the band-to-band position observed from the diffuse reflectance spectrum. The band gap was extrapolated to 4.65 ± 0.02 eV using the Kubelka-Munk model. The preliminary thermoluminescence results indicated that the kinetics involved were neither of first nor second order. Additionally, the activation energy of the electrons within the trap centres was approximated to 0.61 ± 0.01 eV using the Initial Rise model.

Considerable photoluminescence enhancement of LiEu(MoO{sub 4}){sub 2} red phosphors via Bi and/or Si doping for white LEDs

Energy Technology Data Exchange (ETDEWEB)

Wang, Qing-Feng [Department of Materials Science and Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen, Guangdong 518055 (China); Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Liu, Ying [Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Wang, Yu [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region (Hong Kong); Wang, Wenxi; Wan, Yi [Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Wang, Gui-Gen [Department of Materials Science and Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen, Guangdong 518055 (China); Lu, Zhou-Guang [Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China)

2015-03-15

Graphical abstract: Doping of Bi and Si into the lattice leads to an considerable increase of the excitation efficiency and luminous intensity, and obvious movement of the CIE chromaticity coordinates to the NTSC standard values of the LiEu(MoO{sub 4}){sub 2}, a promising red phosphors suitable for near UV excited white-light emitting diodes. - Highlights: • High performance red phosphors for near UV light excited white LEDs. • Lithium lanthanide molybdate red phosphors. • Bi and Si substitution. • Considerable enhancement of luminescence intensity and excitation efficiency. • CIE chromaticity coordinates very close to the NTSC standard values. - Abstract: Novel Bi and/or Si substituted LiEu(MoO{sub 4}){sub 2} phosphors, where Bi was used as sensitizer to enhance the emission intensity and Si was used as substitution to improve the excitation efficiency, were prepared using the sol–gel method, and the photoluminescent properties of the resulting phosphors were intensively investigated. All samples can be excited efficiently by UV (395 nm) light and emit bright red light at 614 nm, which are coupled well with the characteristic emission from a UV-LED. In the Bi{sup 3+}-doped samples, the intensities of the main emission line ({sup 5}D{sub 0}–{sup 7}F{sub 2} transition at 614 nm) are strengthened because of the energy transition from Bi{sup 3+} to Eu{sup 3+}. With the substitution of Mo{sup 4+} by Si{sup 4+}, there are no significant changes in the emission peak positions, but the emission intensity was significantly enhanced under 395 nm excitation. Particularly, the LiEu{sub 0.9}Bi{sub 0.1}(Mo{sub 0.97}Si{sub 0.03}O{sub 4}){sub 2} phosphor doped with both Bi and Si demonstrates superior comprehensive photoluminescence properties with an excellent combination of easy excitation in the near UV range, bright emission intensity, high PL quantum efficiency as well as suitable decay time, which are very suitable for application as red phosphor for near UV

Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment

International Nuclear Information System (INIS)

Kim, Min Su; Nam, Giwoong; Park, Seki; Kim, Hyun; Han, Gang Hee; Lee, Jubok; Dhakal, Krishna P.; Leem, Jae-Young; Lee, Young Hee; Kim, Jeongyong

2015-01-01

We performed nanoscale confocal photoluminescence (PL), Raman, and absorption spectral imaging measurements to investigate the optical and structural properties of molybdenum disulfide (MoS 2 ) monolayers synthesized by chemical vapor deposition method and subjected to oxygen plasma treatment for 10 to 120 s under high vacuum (1.3 × 10 −3 Pa). Oxygen plasma treatment induced red shifts of ~ 20 nm in the PL emission peaks corresponding to A and B excitons. Similarly, the peak positions corresponding to A and B excitons of the absorption spectra were red-shifted following oxygen plasma treatment. Based on the confocal PL, absorption, and Raman microscopy results, we suggest that the red-shifting of the A and B exciton peaks originated from shallow defect states generated by oxygen plasma treatment. - Highlights: • Effects of oxygen plasma on optical properties of monolayer MoS 2 were investigated. • Confocal photoluminescence, Raman, and absorption spectral maps are presented. • Wavelength tuning up to ~ 20 nm for the peak emission wavelength was achieved

Controlled fabrication and tunable photoluminescence properties of Mn2+ doped graphene–ZnO composite

International Nuclear Information System (INIS)

Luan, Xinglong; Zhang, Yihe; Tong, Wangshu; Shang, Jiwu; An, Qi; Huang, Hongwei

2014-01-01

Highlights: • Graphene–ZnO composites were synthesized by a mixed solvothermal method. • ZnO quantum dots are distributed uniformly on the graphene sheets. • A possible hypothesis is raised for the influence of graphene oxide on the nucleation of ZnO. • Mn 2+ doped graphene–ZnO composites were fabricated and the emission spectra can be tuned by doping. - Abstract: Graphene–ZnO composites (G–ZnO) with controlled morphology and photoluminescence property were synthesized by a mixed solvothermal method. Mixed solvent were composed by dimethyl sulfoxide and ethylene glycol. Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectra were used to characterize G–ZnO. Graphene as a substrate can help the distribution and the dispersity of ZnO, and a possible model of the interaction between graphene oxide and ZnO particles is proposed. At the same time, graphene also reduce the size of ZnO particles to about 5 nm. Furthermore, Mn 2+ ions dopes G–ZnO successfully by the mixed solvothermal synthesis and the doping of Mn 2+ makes G–ZnO shift red from 465 nm to 548 nm and 554 nm in the emission spectrum. The changes of the emission spectrum by the adding of Mn 2+ make G–ZnO have tunable photoluminescence spectrum which is desirable for practical applications

Polarizing Ytterbium-Doped all-Solid Photonic Bandgap Fiber with 1150 micrometers2 Effective Mode Area

Science.gov (United States)

2015-02-11

RESPONSIBLE PERSON 19b. TELEPHONE NUMBER Liang Dong Fanting Kong,, Guancheng Gu,, Thomas W. Hawkins ,, Joshua Parsons, Maxwell Jones,, Christopher...Dunn,, Monica T. Kalichevsky-Dong,, Benjamin Pulford,, Iyad Dajani,, Kunimasa Saitoh,, Stephen P. Palese,, Eric Cheung,, Liang Dong c. THIS PAGE The...ytterbium-doped all-solid photonic bandgap fiber with ~1150µm2 effective mode area Fanting Kong,1,* Guancheng Gu,1 Thomas W. Hawkins ,1 Joshua Parsons

Large Bandgap Semiconductors for Solar Water Splitting

DEFF Research Database (Denmark)

Malizia, Mauro

Photoelectrochemical water splitting represents an eco-friendly technology that could enable the production of hydrogen using water as reactant and solar energy as primary energy source. The exploitation of solar energy for the production of hydrogen would help modern society to reduce the reliance...... on fossil fuels as primary feedstock for hydrogen production and diminish the emission of greenhouse gases in the atmosphere, weakening the global warming phenomenon.The dissertation reports the development of GaP (gallium phosphide) photocathodes as a large bandgap semiconductor for photoelectrochemical...... water splitting devices having tandem design. The increase of the photovoltage produced by GaP under illumination was the main goal of this work. GaP has a bandgap of 2.25 eV and could in theory produce a photovoltage of approximately 1.7 V. Instead, the photovoltage produced by the semiconductor...

Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

Directory of Open Access Journals (Sweden)

Martina Gilić

2017-06-01

Full Text Available Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K and UV-VIS spectroscopy (T = 300K. Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.

Synthesis and photoluminescence properties of Sm{sup 3+}substituted glaserite-type orthovanadates K{sub 3}Y[VO{sub 4}]{sub 2} with monoclinic structure

Energy Technology Data Exchange (ETDEWEB)

Duke John David, A., E-mail: dukejohndavid02@gmail.com [Voorhees College, Vellore, Tamil Nadu (India); Muhammad, G. Shakil [Islamiah College, Vaniyambadi, Tamil Nadu (India); Sivakumar, V. [National Institute of Technology (NIT), Rourkela (India)

2016-09-15

A novel phosphor of Glaserite type Orthovanadate K{sub 3}Y[VO{sub 4}]{sub 2} substituted with the trivalent rare-earth Sm{sup 3+} ions were synthesized by the conventional high temperature solid-state reaction method, their structural characterization and photoluminescent properties were investigated by X-ray diffraction and spectrofluorimetry. The phase-purity of glaserite structure in the synthesized compound was verified by XRD study. The morphology was measured by FESEM. Host lattice emits broad-band green color and it is originated from the [VO{sub 4}]{sup 3−}. Photoluminescence studies of Sm{sup 3+} activated samples show orange red emission. The charge transfer behaviours from [VO{sub 4}]{sup 3−} to Sm{sup 3+} ions (host to activator) in K{sub 3}Y{sub (1−x)}[VO{sub 4}]{sub 2}: {sub x}Sm{sup 3+} phosphors have been confirmed by photoluminescence and PL decay life time measurement. No concentration quenching was observed even for higher concentration of the dopant Sm{sup 3+} ions. The CIE chromaticity color coordinate values were calculated and it is very much closer to the NTSC standards. All the results clearly indicate that self-activated K{sub 3}Y{sub 1−x}[VO{sub 4}]{sub 2} with the rare earth {sub x}Sm{sup 3+} activated phosphors show great potential as a phosphor material for near-UV based white LEDs.

Advances in photonic bandgap fiber functionality

DEFF Research Database (Denmark)

Lyngsøe, Jens Kristian

In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented in this ......In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented...

Photonic bandgap structure of 3-D fcc silica nanospheres

Energy Technology Data Exchange (ETDEWEB)

Woo, Y. K.; Ha, N. Y.; Hwang, Ji Soo; Chang, H. J.; Wu, J. W. [Dept. of Physics, Ewha Womans University, Seoul (Korea, Republic of)

2002-07-01

Photonic crystal is an artificial optical material with a periodic dielectric potential, hence exhibiting a bandgap for a propagating electromagnetic wave. We fabricated crystal possessing 3-D fcc opal structure from silica nanospheres. The crystals are self-assembled on a flat glass by evaporating the solvent in the nanosphere suspension at the room temperature. The suspension consists of silica nanospheres with a diameter of 200 nm. The microscopic arrangement of nanospheres is identified by a scanning electron microscope, the resulting structure being fcc.Transmission spectrum of the fabricated photonic crystal in the visible and near-infrared regions is measured at different incident angles to find the distinct Bragg peaks, analysis of which further confirmed the fcc structure of the photonic crystal. From the optical microscopic image, we find that the opal domain varies from 30 μm to 125 μm in size. In order to relate the observed Bragg peaks with the microscopic arrangement of silica nanospheres, we introduced the scalar wave approximation, where the electric field in the medium is treated as a scalar rather than a vector quantity. It is found that the theoretical prediction of the position of bandgap is in a good agreement with the experimental measurement.

Photonic bandgap structure of 3-D fcc silica nanospheres

International Nuclear Information System (INIS)

Woo, Y. K.; Ha, N. Y.; Hwang, Ji Soo; Chang, H. J.; Wu, J. W.

2002-01-01

Photonic crystal is an artificial optical material with a periodic dielectric potential, hence exhibiting a bandgap for a propagating electromagnetic wave. We fabricated crystal possessing 3-D fcc opal structure from silica nanospheres. The crystals are self-assembled on a flat glass by evaporating the solvent in the nanosphere suspension at the room temperature. The suspension consists of silica nanospheres with a diameter of 200 nm. The microscopic arrangement of nanospheres is identified by a scanning electron microscope, the resulting structure being fcc.Transmission spectrum of the fabricated photonic crystal in the visible and near-infrared regions is measured at different incident angles to find the distinct Bragg peaks, analysis of which further confirmed the fcc structure of the photonic crystal. From the optical microscopic image, we find that the opal domain varies from 30 μm to 125 μm in size. In order to relate the observed Bragg peaks with the microscopic arrangement of silica nanospheres, we introduced the scalar wave approximation, where the electric field in the medium is treated as a scalar rather than a vector quantity. It is found that the theoretical prediction of the position of bandgap is in a good agreement with the experimental measurement.

Size-dependent and intra-band photoluminescence of NiS{sub 2} nano-alloys synthesized by microwave assisted hydrothermal technique

Energy Technology Data Exchange (ETDEWEB)

Linganiso, Ella Cebisa [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mhlanga, Sabelo Dalton; Coville, Neil John [Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mwakikunga, Bonex Wakufwa, E-mail: bmwakikunga@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Department of Physics and Biochemical Sciences, University of Malawi, The Polytechnic, Private Bag 303, Chichiri, Blantyre 3 (Malawi)

2013-03-05

Graphical abstract: Unexpected ultra-violet (UV) emission as well as near infra-red (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions due to the smaller crystallite size of the capped NiS{sub 2} nanostructures was also observed. Band energy and local density of states calculation for NiS{sub 2} were used to support the experimentally observed luminescence results. The luminescence features at wavelengths of 400 nm (3.10 eV), 428 nm (2.90 eV), 447 nm (2.77 eV) and 464 nm (2.67) can be attributed to some of those electrons de-exciting from S (3p) levels down to the Ni (3d) (blue to UV emission) whereas those features at wavelengths of 710 nm (1.75 eV), 751 nm (1.65 eV), 754 nm (1.64 eV) [NiS{sub 2}/HDA-capped NiS{sub 2}] and 784 nm (1.58 eV) respectively seem to result from de-excitations between either Ni(3d) or S (3s, 3p) levels and Ni–S hybridization levels (red to near IR emission). Highlights: ► Rapid solid state alloying of Ni and S from their liquid state precursor by microwaves. ► New photoluminescence data of NiS{sub 2} system. ► Unexpected luminescence in the UV–Visible and near IR ranges for such a metal matrix alloy. ► Explanation of NiS{sub 2} photoluminescence from ab initio calculations by electronic energy band structure and density of states. -- Abstract: Synthesis of nickel disulfide (NiS{sub 2}) nano-alloys capped and uncapped with hexadecylamine (HDA) was carried out. A cubic phase NiS{sub 2} formation was confirmed by X-ray diffraction (XRD) analysis. An average crystallite size of 35 nm was obtained for the uncapped nanostructures and 9 nm was obtained for the capped nanostructures estimated using the Scherrer equation. Unexpected ultra-violet (UV) emission as well as near infrared (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Electronic structures and Eu3+ photoluminescence behaviors in Y2Si2O7 and La2Si2O7

International Nuclear Information System (INIS)

Zhang Zhiya; Wang Yuhua; Zhang Feng; Cao Haining

2011-01-01

Research highlights: → Host excitation near the band gap of Y 2 Si 2 O 7 and La 2 Si 2 O 7 is analyzed. → The calculated result well explains Eu 3+ PL behaviors in Y 2 Si 2 O 7 and La 2 Si 2 O 7 . → The electronic structure and Eu 3+ VUV PL in La 2 Si 2 O 7 are first estimated. - Abstract: The electronic structures and linear optical properties of Y 2 Si 2 O 7 (YSO) and La 2 Si 2 O 7 (LSO) are calculated by LDA method based on the theory of DFT. Both YSO and LSO are direct-gap materials with the direct band gap of 5.89 and 6.06 eV, respectively. The calculated total and partial density of states indicate that in both YSO and LSO the valence band (VB) is mainly constructed from O 2p and the conduction band (CB) is mostly formed from Y 4d or La 5d. Both the calculated VB and CB of YSO exhibit relatively wider dispersion than that of LSO. In addition, the CB of YSO presents more electronic states. Meanwhile, the VB of LSO shows narrower energy distribution with higher electronic states density. The theoretical absorption of YSO shows larger bandwidth and higher intensity than that of LSO. The results are compared with the experimental host excitations and impurity photoluminescence in Eu 3+ -doped YSO and LSO.

Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

International Nuclear Information System (INIS)

Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N

2011-01-01

The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.

Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}

Energy Technology Data Exchange (ETDEWEB)

Yanagi, Hiroshi, E-mail: hyanagi@yamanashi.ac.jp [Graduate Faculty of Interdisciplinary Research, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510 (Japan); Sato, Chiyuki; Kimura, Yota [Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510 (Japan); Suzuki, Issei; Omata, Takahisa [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2015-02-23

Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd–Ga–O semiconductors display bandgaps covering the entire 2.5–4.3 eV region while maintaining large electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu{sub 2}O, which is suitable for solar cells and solar-blind ultraviolet sensors.

Optimum design of band-gap beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...... or significantly suppressed for a range of external excitation frequencies. Maximization of the band-gap is therefore an obvious objective for optimum design. This problem is sometimes formulated by optimizing a parameterized design model which assumes multiple periodicity in the design. However, it is shown...... in the present paper that such an a priori assumption is not necessary since, in general, just the maximization of the gap between two consecutive natural frequencies leads to significant design periodicity. The aim of this paper is to maximize frequency gaps by shape optimization of transversely vibrating...

Synthesis, characterization and photoluminescence properties of Dy3+ -doped nano-crystalline SnO2.

CSIR Research Space (South Africa)

Pillai, SK

2010-04-15

Full Text Available the crystallite size. The experimental result on photoluminescence characteristics originating from Dy3+-doping in nanocrystalline SnO2 reveals the dependence of the luminescent intensity on dopant concentration....

Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

Science.gov (United States)

Kim, Il-Ho

2018-05-01

Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

Proportion of influence phases anatase and rutile TiO_2 in the photoluminescence 538 nm emission wavelength

International Nuclear Information System (INIS)

Araujo, D.S.; Diniz, V.C.S.; Araujo, P.M.A.G.; Costa, A.C.F.M.; Viana, R.S.; Junior, S.A.

2016-01-01

TiO2 is one of the most studied materials in the technology area, especially in photoluminescent applications involving catalysts from the biosensor. Therefore, we propose to obtain the Pechini method TiO_2 molar ratio of citric acid/metal ions of 3:1 and 4:1 in order to investigate the influence of the proportion of anatase and rutile phases with the photoluminescence excitation wavelength of 538nm emission. The samples were characterized by X-ray diffraction, thermal analysis and excitation spectroscopy. The results indicate the presence of two phases, with a proportion of 78.99 and 83.58 and 21.01% of anatase and rutile 16.42%, density 3.82 and 3.70 g/cm"3 and excitement in length wave emission 538nm with maximum intensity 91289.2 and 71880,7 cps for samples 3:1 and 4:1, respectively. Sample 3:1 with the highest percentage of rutile phase favored photoluminescence. (author)

Synthesis and photoluminescence enhancement of PVA capped Mn{sup 2+} doped ZnS nanoparticles and observation of tunable dual emission: A new approach

Energy Technology Data Exchange (ETDEWEB)

Viswanath, R. [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta, Karnataka, 577451 (India); Bhojya Naik, H.S., E-mail: hsb_naik@rediffmail.com [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta, Karnataka, 577451 (India); Yashavanth Kumar, G.S.; Prashanth Kumar, P.N.; Harish, K.N. [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta, Karnataka, 577451 (India); Prabhakara, M.C. [Department of P.G. Studies and Research in Industrial Chemistry, Sir. M.V. Government Science College, Bommanakatte, Shimoga, Bhadravathi, Karnataka, 577302 (India); Praveen, R. [Department of Technical Education, Automobile Technology Branch HMS Polytechnic (Government Aided), Tumkur, Karnataka, 572102 (India)

2014-05-01

Highlights: • Synthesis of PVA capped Mn{sup 2+} doped ZnS nanoparticles by chemical precipitation method in air atmosphere. • Characterized by the spectral techniques. • Study on their optical properties. • Calculation of particle size by different techniques. • Investigation of the increased luminescence characteristics (UV to IR region) of Mn{sup 2+} doped ZnS ions at room temperature and the origin of the luminescence observed. - Abstract: This paper reports the enhanced photoluminescence (PL) property of polyvinyl alcohol (PVA) capped Mn{sup 2+} doped ZnS nanocrystals prepared by chemical precipitation method. The surface-modified Mn{sup 2+} doped ZnS nanocrystals resulted in the multi-color property. The morphology and crystallite size were characterized by field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) techniques. The crystallite size was estimated to be 5 nm from HRTEM and calculated as 2–4 nm from peak broadening of the X-ray diffraction (XRD) pattern with cubic zincblende structure. Increase in the band gap with decrease in the crystallite size was observed from the UV–visible absorption spectrum, which confirms the quantum confinement effect. The room temperature photoluminescence (PL) emission measurements revealed the presence of blue (427 nm) and near IR reddish–orange (752 nm) emission bands in addition to the typical yellow–orange (585 nm) bands in all the Mn{sup 2+} doped samples, which were attributed due to transition within the 3ds configuration of Mn{sup 2+} ions incorporation in ZnS host under UV excitation at 320 nm. As far as we know, the reddish–orange bands at 752 nm near IR region along with the blue and yellow–orange colored PL are reported for the first time. In this way, the PL color from these ZnS nanocrystals can be tuned from UV to near infrared region (IR). The synthesized ZnS:Mn NPs can be further functionalized for

Synthesis and Photoluminescence Properties of Ca2Ga2SiO7:Eu(3+) Red Phosphors with an Intense (5)D0 → (7)F4 Transition.

Science.gov (United States)

Behrh, Gaganpreet Kaur; Gautier, Romain; Latouche, Camille; Jobic, Stéphane; Serier-Brault, Hélène

2016-09-19

Novel melilite-type Ca2Ga2SiO7:Eu(3+) red-emitting phosphors with different Eu(3+) contents were synthesized via high-temperature solid-state reaction. The crystal structure, optical absorption, and photoluminescence properties were investigated, while density functional theory calculations were performed on the host lattice. The excitation spectra indicate that phosphors can be effectively excited by near-UV light for a potential application in white-light-emitting diodes. Because of the abnormally high intensity emission at about 700 nm arising from the (5)D0 → (7)F4 transition of Eu(3+), the phosphors Ca2Ga2SiO7:Eu(3+) show a deep-red emission with chromaticity coordinates (0.639, 0.358).

Optical identification using imperfections in 2D materials

Science.gov (United States)

Cao, Yameng; Robson, Alexander J.; Alharbi, Abdullah; Roberts, Jonathan; Woodhead, Christopher S.; Noori, Yasir J.; Bernardo-Gavito, Ramón; Shahrjerdi, Davood; Roedig, Utz; Fal'ko, Vladimir I.; Young, Robert J.

2017-12-01

The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Imperfections created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

Science.gov (United States)

Zhang, C. Y.; Yu, M.

2018-03-01

Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

Photoluminescence and photostimulated luminescence in the X-ray storage phosphor BaBr2 doped with cerium

International Nuclear Information System (INIS)

Corradi, G.; Secu, M.; Schweizer, S.; Spaeth, J.-M.

2004-01-01

In orthorhombic BaBr 2 : Ce 3+ two kinds of luminescence bands at room temperature have been attributed to charge-compensated Ce 3+ centres. One type was associated with potassium (or some other monovalent cation) on a neighbouring Ba site and another one associated with an unidentified defect. A third kind of emission, observed only as low temperature photoluminescence (PL), is ascribed to isolated Ce 3+ ions. The charge-compensated Ce 3+ complexes are active both in PL and photostimulated luminescence (PSL) following X-ray irradiation. The PSL is nearly as efficient as in the case of the commercially used X-ray storage phosphor BaFBr:Eu 2+ . The X-ray induced electrons are trapped in F-type centres whose band position is characteristic for the nearby Ce complex. As shown by the fingerprint character of the PSL itself, the hole partner in the recombination is also associated or identical with the same Ce complex

Relation between bandgap and resistance drift in amorphous phase change materials.

Science.gov (United States)

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-12-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

Spectrally and spatially resolved photoluminescence. Lateral fluctuations and depth profiles of Cu(In,Ga)Se2-absorbers

International Nuclear Information System (INIS)

Neumann, Oliver

2013-01-01

The aim of this thesis is the development and refinement of photoluminescence (PL) methods for inhomogeneous absorbers to identify lateral fluctuations and depth-dependent variations of spectroscopic, optical and opto-electronic properties in the submicron/micron range. The first approach deals with the spectral investigation of PL emission from the front and the rear side of an absorber, whereas the second idea is about the analysis of PL spectra from the front side of the absorber for different absorber thicknesses. Another technique for determination of depth-dependent variations are confocal PL measurements at cross sections of absorbers. The last concept pursues the study of lateral fluctuations with an optical near-field microscope on specially prepared absorbers. These four strategies are demonstrated with samples based on Cu(In,Ga)Se 2 .

Enhanced orange-red emission by using Mo codoped in Ba2CaWO6: Eu3+, Li+ phosphor under near UV excitation

International Nuclear Information System (INIS)

Sun, Xiaoyuan; Hao, Zhendong; Li, Chunjie; He, Xiaoguang; Qi, Haiyan; Yu, Lijun; Luo, Yongshi; Zhang, Jiahua; Gao, Jiwei; Zhong, Ruixia

2013-01-01

The orange-red emitting phosphors Ba 2 Ca 0.9 Mo x W 1−x O 6 :Eu 3+ 0.05 , Li + 0.05 (x=0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.5, 0.75, and 1.0) and Ba 2 Ca 1−2y Mo 0.2 W 0.8 O 6 :Eu 3+ y , Li + y (y=0.03, 0.05, 0.07, 0.1, and 0.15) were synthesized. The crystalline structure and photoluminescence properties of these phosphors were described. The strong orange-red emission of Eu 3+ ( 5 D 0 — 7 F 1 transition) at around 593 nm was observed. Addition of Mo strongly enhances the charge transfer band absorption in the near ultraviolet region that corresponds to near ultraviolet white light emitting diode. The dependence of photoluminescence intensities on Eu 3+ concentrations with optimal Mo concentration under 400 nm excitation was studied. The phosphor is considered to be a promising orange-red emitting phosphor for near ultraviolet GaN-based white light emitting diode. - Highlights: ► The samples form solid solutions when Mo is added into Ba 2 CaWO 6 : Eu 3+ , Li + phosphors. ► Addition of Mo in Ba 2 CaWO 6 : Eu 3+ , Li + shifts the PLE spectra maximum from UV region to near UV region. ► In Ba 2 CaMo x W 1−x O 6 :Eu 3+ , Li + , the most efficient concentrations occur at 0.1 and 0.2 for Eu and Mo.

Photoluminescent properties of complex metal oxide nanopowders for gas sensing

Science.gov (United States)

Bovhyra, R. V.; Mudry, S. I.; Popovych, D. I.; Savka, S. S.; Serednytski, A. S.; Venhryn, Yu. I.

2018-03-01

This work carried out research on the features of photoluminescence of the mixed and complex metal oxide nanopowders (ZnO/TiO2, ZnO/SnO2, Zn2SiO4) in vacuum and gaseous ambient. The nanopowders were obtained using pulsed laser reactive technology. The synthesized nanoparticles were characterized by X-ray diffractometry, energy-dispersive X-ray analysis, and scanning and transmission electron microscopy analysis for their sizes, shapes and collocation. The influence of gas environment on the photoluminescence intensity was investigated. A change of ambient gas composition leads to a rather significant change in the intensity of the photoluminescence spectrum and its deformation. The most significant changes in the photoluminescent spectrum were observed for mixed ZnO/TiO2 nanopowders. This obviously is the result of a redistribution of existing centers of luminescence and the appearance of new adsorption centers of luminescence on the surface of nanopowders. The investigated nanopowders can be effectively used as sensing materials for the construction of the multi-component photoluminescent sensing matrix.

Synthesis and photoluminescence properties of Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red phosphors for white LED applications

Energy Technology Data Exchange (ETDEWEB)

Annadurai, G.; Kennedy, S. Masilla Moses, E-mail: kennedysmm@ssn.edu.in

2016-01-15

Novel pellyite type Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red emitting phosphors with different Eu{sup 3+} contents were synthesized by the solid state reaction method. The crystal structure, photoluminescence properties and concentration quenching of Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} phosphors were investigated. Powder X-ray diffraction measurements confirmed the structure of the samples. The photoluminescence emission (PL) and excitation (PLE) spectra were measured. The results showed that the dominant hypersensitive red emission peak of the phosphors Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} was located at 613 nm attributed to the Eu{sup 3+} transition ({sup 5}D{sub 0}→{sup 7}F{sub 2}) which could be effectively excited by 395 nm (near-UV). The latter band matched well with the emission from the near-UV LED chips. The intensity ratio of {sup 5}D{sub 0}→{sup 7}F{sub 2} to {sup 5}D{sub 0}→{sup 7}F{sub 1} transition showed slight variation with Eu{sup 3+} concentrations. The Eu{sup 3+} emission intensity was maximum for 9 mol%. The luminescence quantum efficiency was determined and also the decay profiles were obtained and analyzed. In addition, the Commission International del'Eclairage (CIE) chromaticity coordinates of Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:0.09Eu{sup 3+} phosphor were calculated to be 0.637 and 0.362. The experimental results demonstrated that the Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red emitting phosphor is a potential candidate for white light emitting diodes (WLEDs) pumped by near-UV chip. - Highlights: • A novel Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red phosphor was synthesized. • The samples yielded a dominant PL emission of Eu{sup 3+} at 613 nm. • Eu{sup 3+} concentration was optimized to be 9 mol% in Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17.} • CIE chromaticity coordinates were estimated from the emission spectrum.

Systematic Bandgap Engineering of Graphene Quantum Dots and Applications for Photocatalytic Water Splitting and CO2 Reduction.

Science.gov (United States)

Yan, Yibo; Chen, Jie; Li, Nan; Tian, Jingqi; Li, Kaixin; Jiang, Jizhou; Liu, Jiyang; Tian, Qinghua; Chen, Peng

2018-04-24

Graphene quantum dots (GQDs), which is the latest addition to the nanocarbon material family, promise a wide spectrum of applications. Herein, we demonstrate two different functionalization strategies to systematically tailor the bandgap structures of GQDs whereby making them snugly suitable for particular applications. Furthermore, the functionalized GQDs with a narrow bandgap and intramolecular Z-scheme structure are employed as the efficient photocatalysts for water splitting and carbon dioxide reduction under visible light. The underlying mechanisms of our observations are studied and discussed.

Crystal structure, thermally stability and photoluminescence properties of novel Sr10(PO4)6O:Eu2+ phosphors

International Nuclear Information System (INIS)

Guo, Qingfeng; Liao, Libing; Mei, Lefu; Liu, Haikun

2015-01-01

A series of novel luminescent phosphors Sr 10 (PO 4 ) 6 O:Eu 2+ with apatite structure were synthesized via a high temperature solid-state reaction. The phase structure, photoluminescence (PL) properties, the PL thermal stability, as well as the fluorescence decay curves of the samples were investigated to characterize the resulting samples, and the selected Sr 9.97 (PO 4 ) 6 O:0.03Eu 2+ phosphor exhibits strong thermal quenching resistance, retaining the luminance of 88.73% at 150 °C. The quenching concentration of Eu 2+ in Sr 10 (PO 4 ) 6 O was about 0.03 attributing to the dipole–quadrupole interaction. The Sr 10 (PO 4 ) 6 O:Eu 2+ phosphor exhibited a broad-band blue emission at 439 nm upon excitation at 346 nm. The results indicate that Sr 10 (PO 4 ) 6 O:Eu 2+ phosphors have potential applications as near UV-convertible phosphors for white-light UV LEDs. - Graphical abstract: Sr 10 (PO 4 ) 6 O:Eu 2+ phosphors have potential applications as near UV-convertible phosphors for white-light UV LEDs. - Highlights: • Sr 9.97 (PO 4 ) 6 O:0.03Eu 2+ phosphor exhibits strong thermal quenching resistance. • Two different Eu 2+ emission centers exists in Sr 10 (PO 4 ) 6 O. • The activation energy was also estimated for the Eu 2+ luminescence center

Thermal tunability of photonic bandgaps in liquid crystal infiltrated microstructured polymer optical fibers

DEFF Research Database (Denmark)

Yuan, Scott Wu; Wei, Lei; Alkeskjold, Thomas Tanggaard

2009-01-01

We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used to demons......We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used...... to demonstrate that both signs of the thermal tunability of the bandgaps are possible. The useful bandgaps are ultimately bounded to the visible range by the transparency window of the polymer....

Mg{sub 2}SiO{sub 4}:Tb{sup 3+} nanophosphor: Auto ignition route and near UV excited photoluminescence properties for WLEDs

Energy Technology Data Exchange (ETDEWEB)

Naik, Ramachandra [Department of Physics, New Horizon College of Engineering, Bangalore 560103 (India); Research and Development Center, Bharathiar University, Coimbatore 641046 (India); Prashantha, S.C., E-mail: scphysics@gmail.com [Research and Development Center, Bharathiar University, Coimbatore 641046 (India); Research Center, Department of Science, East West Institute of Technology, Bangalore 560091 (India); Nagabhushana, H., E-mail: bhushanvlc@gmail.com [Prof. CNR Rao Center for Advanced Materials, Tumkur University, Tumkur 572103 (India); Nagaswarupa, H.P.; Anantharaju, K.S. [Research Center, Department of Science, East West Institute of Technology, Bangalore 560091 (India); Sharma, S.C. [Chhattisgarh Swami Vivekananda Technical University, Bhilai (CG) 493441 (India); Nagabhushana, B.M. [Department of Chemistry, M.S. Ramaiah Institute of Technology, Bangalore 560054 (India); Premkumar, H.B. [Department of Physics, Acharya Institute of Technology, Bangalore 560107 (India); Girish, K.M. [Department of Physics, Dayanand Sagar Academy of Technology and Management, Bangalore 560082 (India)

2014-12-25

Graphical abstract: PL Emission and CIE diagram of Mg{sub 2}SiO{sub 4}:Tb{sup 3+} nanophosphor. - Highlights: • Mg{sub 2}SiO{sub 4}:Tb{sup 3+} - prepared by combustion technique at very low temperature (350 °C). • Characteristic emission peaks of Tb{sup 3+} ion in the range 430–650 nm are recorded. • CIE co-ordinate values located in the green region. • Present phosphor was quite useful for display applications. - Abstract: For the first time nanoparticles of Tb{sup 3+} doped (1–11 mol%) Mg{sub 2}SiO{sub 4} have been prepared using low temperature (350 °C) solution combustion technique with magnesium nitrate as precursor and oxalyl di-hydrazide (ODH) as fuel. The Powder X-ray diffraction (PXRD) patterns of the sample revealed orthorhombic structure with α-phase. The average crystallite size using Scherer’s formula, W–H plot and Size–strain plot is found to be 28 nm and the same is confirmed by Transmission electron microscopy (TEM) studies. Scanning electron microscopy (SEM) pictures show a porous structure and the crystallites were agglomerated. The effect of Tb{sup 3+} cations on luminescence characteristics of Mg{sub 2}SiO{sub 4} is studied and the results are discussed in detail. The phosphors exhibit bright green emission upon near ultra violet (NUV) 377 nm excitation. The characteristic photoluminescence emission peaks at 417, 436, 458 nm in blue region due to {sup 5}D{sub 3} → {sup 7}F{sub J} (J = 5, 4, 3) of Tb{sup 3+} ions and the emission peaks at 486, 541, 584 and 621 nm in green region corresponds to {sup 5}D{sub 4} → {sup 7}F{sub J} (J = 6, 5, 4, 3) transitions of Tb{sup 3+} ions owing to f–f transitions of Tb{sup 3+} cations in the given host lattice and are due to dipole–quadropole interactions. The CIE chromaticity co-ordinates are calculated from emission spectra and falls in green region. Therefore the present phosphor is highly useful for mercury free solid state lighting (SSL) and also for display applications.

Recent Advances in Wide-Bandgap Photovoltaic Polymers.

Science.gov (United States)

Cai, Yunhao; Huo, Lijun; Sun, Yanming

2017-06-01

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct bandgap silicon: tensile-strained silicon nanocrystals

Czech Academy of Sciences Publication Activity Database

Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

2014-01-01

Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

Facile synthesis of red- to near-infrared-emitting CdTe{sub x}Se{sub 1-x} alloyed quantum dots via a noninjection one-pot route

Energy Technology Data Exchange (ETDEWEB)

Liao Lifang; Zhang Hua [Key Laboratory for Advanced Materials, Department of Chemistry, East China University of Science and Technology, Shanghai 200237 (China); Zhong Xinhua, E-mail: zhongxh@ecust.edu.c [Key Laboratory for Advanced Materials, Department of Chemistry, East China University of Science and Technology, Shanghai 200237 (China)

2011-02-15

High-quality CdTeSe colloidal nanocrystals with gradient distribution of components, consisting of Te-rich inner cores and Se-rich outer shells, were synthesized in a 'green' solvent paraffin via a noninjection one-pot approach with the use of cadmium oxide (CdO), elemental tellurium, and elemental selenium as Cd, Te, and Se sources, respectively. All of these reactants were loaded at room temperature. This features synthetic reproducibility and large-scale capability. The bandgap engineering of the obtained CdTeSe QDs can be conveniently realized through the variation of growth temperature. Red- to near-infrared-emitting (620-780 nm) QDs with nearly identical particle sizes can be obtained when the reaction temperature was changed from 180 to 280 {sup o}C with the fixation of precursor feed ratio at 5Cd-0.5Te-0.5Se. The as-prepared CdTeSe QDs exhibit PL QY as high as 53%. The resulting CdTeSe QDs were characterized by UV-vis and photoluminescence spectroscopy, powder X-ray diffraction, transmission electron microscopy, and inductively coupled plasma atomic emission spectroscopy.

Near-infrared photoluminescence in La{sub 0.98}AlO{sub 3}: {sub 0.02}Ln{sup 3+}(Ln = Nd/Yb) for sensitization of c-Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Sawala, N. S., E-mail: nssawala@gmail.com; Koparkar, K. A.; Omanwar, S. K. [Department of Physics, SantGadge Baba Amravati University, Amravati - MH, 444602 (India); Bajaj, N. S. [Department of Physics, Toshniwal Art, Commerce and Science College, Sengoan, Hingoli - MH (India)

2016-05-06

The host matrix LaAlO{sub 3} was synthesized by conventional solid state reaction method in which the Nd{sup 3+} ions and Yb{sup 3+} ions successfully doped at 2mol% concentrations. The phase purity was confirmed by X ray powder diffraction (XRD) method. The photoluminescence (PL) properties were studied by spectrophotometer in near infra red (NIR) and ultra violet visible (UV-VIS) region. The Nd{sup 3+} ion doped LaAlO{sub 3} converts a visible (VIS) green photon (587 nm) into near infrared (NIR) photon (1070 nm) while Yb{sup 3+} ion doped converts ultra violet (UV) photon (221 nm) into NIR photon (980 nm). The La{sub 0.98}AlO{sub 3}: {sub 0.02}Ln{sup 3+}(Ln = Nd / Yb) can be potentiality used for betterment of photovoltaic (PV) technology. This result further indicates its potential application as a luminescence converter layer for enhancing solar cells performance.

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

KAUST Repository

Tangi, Malleswararao

2017-09-22

We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

KAUST Repository

Tangi, Malleswararao; Shakfa, Mohammad Khaled; Mishra, Pawan; Li, Ming-Yang; Chiu, Ming-Hui; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

Photoluminescence properties of the composite of porous alumina and poly (2,5-dibutoxy-1,4 phenylenevinylene)

International Nuclear Information System (INIS)

Zhao Yi; Yang Deren; Zhou Chengyao; Yang Qing; Que Duanlin

2003-01-01

The spin coating method was used to assemble polymer (Poly (2,5-dibutoxy-1,4-phenylenevinylene)) (DBO-PPV) into the pores of porous alumina which was prepared by anodization. Four peaks in the photoluminescence (PL) spectra of the composite, with contributions from the DBO-PPV and porous alumina, were found. It was also found that the light emitting from the porous alumina could excite the photoluminescence of DBO-PPV. The nanometer effect of the porous alumina can lead to a blue shift of 90 nm of the PL peaks of DBO-PPV

Research on bandgaps in two-dimensional phononic crystal with two resonators.

Science.gov (United States)

Gao, Nansha; Wu, Jiu Hui; Yu, Lie

2015-02-01

In this paper, the bandgap properties of a two-dimensional phononic crystal with the two resonators is studied and embedded in a homogenous matrix. The resonators are not connected with the matrix but linked with connectors directly. The dispersion relationship, transmission spectra, and displacement fields of the eigenmodes of this phononic crystal are studied with finite-element method. In contrast to the phononic crystals with one resonators and hollow structure, the proposed structures with two resonators can open bandgaps at lower frequencies. This is a very interesting and useful phenomenon. Results show that, the opening of the bandgaps is because of the local resonance and the scattering interaction between two resonators and matrix. An equivalent spring-pendulum model can be developed in order to evaluate the frequencies of the bandgap edge. The study in this paper is beneficial to the design of opening and tuning bandgaps in phononic crystals and isolators in low-frequency range. Copyright © 2014 Elsevier B.V. All rights reserved.

NIR optimized dual mode photoluminescence in Nd doped Y{sub 2}O{sub 3} ceramic phosphor

Energy Technology Data Exchange (ETDEWEB)

Sukul, Prasenjit Prasad; Mahata, Manoj Kumar; Kumar, Kaushal, E-mail: kumar.bhu@gmail.com

2017-05-15

Authors here report the dual mode photo luminescence emission in neodymium doped yttrium oxide ceramic phosphor upon 808 nm diode laser excitation. Single cubic phase Nd{sup 3+} doped Y{sub 2}O{sub 3} phosphor was synthesized using urea assisted combustion route. Nd{sup 3+} doped Y{sub 2}O{sub 3} ceramic phosphor has given photoluminescence in a wide wavelength range covering near infrared window (850–1100 nm) to the visible region i.e. green (525 nm) and red (680 nm) upon 808 nm diode laser excitation. The two most intense bands on 808 nm excitation were observed at 750 nm and 1064 nm due to the upconversion and downconversion emission processes. The sample was also tested for emission using 980 nm and intense green emission due to the trace presence of Er{sup 3+} in the raw materials was seen in the sample. The excitation power dependent upconversion measurements have shown that transitions {sup 4}F{sub 9/2}→{sup 4}I{sub 9/2} and {sup 4}S{sub 3/2}→{sup 4}I{sub 9/2} are thermally coupled and can be used to estimate the sample temperature using Boltzmann relation.

New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Hüser, Falco; Pandey, Mohnish

2014-01-01

Electronic bandgap calculations are presented for 2400 experimentally known materials from the Materials Project database and the bandgaps, obtained with different types of functionals within density functional theory and (partial) self-consistent GW approximation, are compared for 20 randomly...

Synthesis of highly non-stoichiometric Cu{sub 2}ZnSnS{sub 4} nanoparticles with tunable bandgaps

Energy Technology Data Exchange (ETDEWEB)

Hamanaka, Yasushi, E-mail: hamanaka@nitech.ac.jp; Oyaizu, Wataru; Kawase, Masanari [Nagoya Institute of Technology, Department of Materials Science and Engineering (Japan); Kuzuya, Toshihiro [Muroran Institute of Technology, College of Design and Manufacturing Technology (Japan)

2017-01-15

Non-stoichiometric Cu{sub 2}ZnSnS{sub 4} nanoparticles with average diameters of 4–15 nm and quasi-polyhedral shape were successfully synthesized by a colloidal method. We found that a non-stoichiometric composition of Zn to Cu in Cu{sub 2}ZnSnS{sub 4} nanoparticles yielded a correlation where Zn content increased with a decrease in Cu content, suggesting formation of lattice defects relating to Cu and Zn, such as a Cu vacancy (V{sub Cu}), antisite with Zn replacing Cu (Zn{sub Cu}), and/or defect cluster of V{sub Cu} and Zn{sub Cu}. The bandgap energy of Cu{sub 2}ZnSnS{sub 4} nanoparticles systematically varies between 1.56 and 1.83 eV depending on the composition ratios of Cu and Zn, resulting in a wider bandgap for Cu-deficient Cu{sub 2}ZnSnS{sub 4} nanoparticles. These characteristics can be ascribed to the modification in electronic band structures due to formation of V{sub Cu} and Zn{sub Cu} on the analogy of ternary copper chalcogenide, chalcopyrite CuInSe{sub 2}, in which the top of the valence band shifts downward with decreasing Cu contents, because much like the structure of CuInSe{sub 2}, the top of the valence band is composed of a Cu 3d orbital in Cu{sub 2}ZnSnS{sub 4}.

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

Energy Technology Data Exchange (ETDEWEB)

Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2016-01-15

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

International Nuclear Information System (INIS)

Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

2016-01-01

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

Science.gov (United States)

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-11

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Efficient CsF interlayer for high and low bandgap polymer solar cell

Science.gov (United States)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

Photoluminescence properties of TiO{sub 2} nanofibers

Energy Technology Data Exchange (ETDEWEB)

Chetibi, Loubna [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Busko, Tetiana; Kulish, Nikolay Polikarpovich [Kyiv National Taras Shevchenko University (Ukraine); Hamana, Djamel [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Chaieb, Sahraoui [Lawrence Berkeley National Laboratory (United States); Achour, Slimane, E-mail: achourslimane11@yahoo.fr [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria)

2017-04-15

Multi-walled carbon nanotube (MWCNT)-TiO{sub 2} nanofiber (NF) composites forming a layered nanostructure (MWCNTs/TiO{sub 2} NFs/Ti) were prepared by impregnation at low temperature. Room temperature photoluminescence (PL) of these nanostructures shows a broad intense band in the visible light range (∼450–600 nm). The origin of the PL emission which, mainly, resulted from surface oxygen vacancies and other defects was investigated. We studied the effect of MWCNT deposition on the PL of TiO{sub 2} NFs where the MWCNTs can act as an electron reservoir of electrons emitted from TiO{sub 2} nanofibers when irradiated with UV light. The combination of MWCNTs and TiO{sub 2} results in quenching of TiO{sub 2} luminescence in the visible range. In addition, the prepared surface of MWCNTs-TiO{sub 2} was irradiated with Ti{sup +} ions using irradiation energy of 140 keV and doses of 10{sup 13} ions/cm{sup 2}. Also, this treatment induced the PL intensity quenching due to the generation of non-radiative additional levels inside the band gap.

Wide Bandgap Semiconductor Opportunities in Power Electronics

Energy Technology Data Exchange (ETDEWEB)

Das, Sujit [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Marlino, Laura D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Kristina O. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2018-01-01

The report objective is to explore the Wide Bandgap (WBG) Power Electronics (PE) market, applications, and potential energy savings in order to identify key areas where further resources and investments of the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (DOE EERE) would have the most impact on U.S. competiveness. After considering the current market, several potential near-term application areas were identified as having significant market and energy savings potential with respect to clean energy applications: (1) data centers (uninterruptible power supplies and server power supplies); (2) renewable energy generation (photovoltaic-solar and wind); (3) motor drives (industrial, commercial and residential); (4) rail traction; and, (5) hybrid and electric vehicles (traction and charging). After the initial explorative analyses, it became clear that, SiC, not GaN, would be the principal WBG power device material for the chosen markets in the near future. Therefore, while GaN is discussed when appropriate, this report focuses on SiC devices, other WBG applications (e.g., solid-state transformers, combined heat and power, medical, and wireless power), the GaN market, and GaN specific applications (e.g., LiDAR, 5G) will be explored at a later date. In addition to the market, supply and value chain analyses addressed in Section 1 of this report, a SWOT (Strength, Weakness, Opportunity, Threat) analysis and potential energy savings analysis was conducted for each application area to identify the major potential WBG application area(s) with a U.S. competitiveness opportunity in the future.

Synthesis, characterization and photoluminescence properties of Dy{sup 3+}-doped nano-crystalline SnO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Pillai, Sreejarani K.; Sikhwivhilu, Lucky M. [National Centre for Nano-Structured Materials, CSIR, PO Box 395, Pretoria 0001 (South Africa); Hillie, Thembela K., E-mail: thillie@csir.co.za [National Centre for Nano-Structured Materials, CSIR, PO Box 395, Pretoria 0001 (South Africa); Physics Department, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

2010-04-15

Nano-crystalline of tin oxide doped with varying wt% of Dy{sup 3+} was prepared using chemical co-precipitation method and characterised by various advanced techniques such as BET-surface area, Fourier transform infrared spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence measurements. Analytical results demonstrated that the nanocrystalline tin oxide is in tetragonal crystalline phase and doping with Dy{sup 3+} could inhibit the phase transformation, increases surface area and decreases the crystallite size. The experimental result on photoluminescence characteristics originating from Dy{sup 3+}-doping in nanocrystalline SnO{sub 2} reveals the dependence of the luminescent intensity on dopant concentration.

Photoluminescence wavelength variation of monolayer MoS{sub 2} by oxygen plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Su [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nam, Giwoong [Department of Nanoscience & Engineering, Inje University, Gimhae 621-749 (Korea, Republic of); Park, Seki; Kim, Hyun [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Han, Gang Hee [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Jubok; Dhakal, Krishna P. [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Leem, Jae-Young [Department of Nanoscience & Engineering, Inje University, Gimhae 621-749 (Korea, Republic of); Lee, Young Hee [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeongyong, E-mail: j.kim@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-09-01

We performed nanoscale confocal photoluminescence (PL), Raman, and absorption spectral imaging measurements to investigate the optical and structural properties of molybdenum disulfide (MoS{sub 2}) monolayers synthesized by chemical vapor deposition method and subjected to oxygen plasma treatment for 10 to 120 s under high vacuum (1.3 × 10{sup −3} Pa). Oxygen plasma treatment induced red shifts of ~ 20 nm in the PL emission peaks corresponding to A and B excitons. Similarly, the peak positions corresponding to A and B excitons of the absorption spectra were red-shifted following oxygen plasma treatment. Based on the confocal PL, absorption, and Raman microscopy results, we suggest that the red-shifting of the A and B exciton peaks originated from shallow defect states generated by oxygen plasma treatment. - Highlights: • Effects of oxygen plasma on optical properties of monolayer MoS{sub 2} were investigated. • Confocal photoluminescence, Raman, and absorption spectral maps are presented. • Wavelength tuning up to ~ 20 nm for the peak emission wavelength was achieved.

Transmission properties of hollow-core photonic bandgap fibers

DEFF Research Database (Denmark)

Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.

2010-01-01

Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers.......Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers....

Photoluminescence of Turkish purple jade (turkiyenite)

International Nuclear Information System (INIS)

Hatipoğlu, Murat; Başevirgen, Yasemin

2012-01-01

The purple-colored unique gem material is only found in the Harmancık (Bursa) region of the western Anatolia (Turkey). Therefore, it is specially called “Turkish purple jade or turkiyenite” on the worldwide gem market. Even though its jadeite implication is the principal constituent, the material cannot be considered as a single jadeite mineral since other implications are quartz, orthoclase, epidote, chloritoid and phlogopite minerals. Even if the analytical methods are used to characterize and identify the Turkish purple jade samples in detail, the luminescence spectra, especially photoluminescence features regarding to composite mineral implications of the material are important because of the existence the numerous characteristic broad and intensive luminescence bands in the samples. We can state that the UV-irradiation luminescence centers as photoluminescence (PL) are due to the overall signals in the Turkish purple jade samples. Accordingly, the distinctive photoluminescence peaks at 743, 717, 698, 484, 465 and 442 nm in PL-2D (counter diagram and sections) and PL-3D (sequence spectra) ranging between 300 and 900 nm of wavelengths, and between 220 and 340 K of temperatures are observed. Finally, photoluminescence features of the heterogeneous-structured material cannot be simply attributed to any chemical impurities, since the jade mass has numerous heterogeneous mineral constituents instead of a single jadeite mineral. Six different mineral implications and chemical impurities in the material composition display complex and individual all kind of luminescence features. Therefore, photoluminescence as well as radioluminescence, cathodoluminescence and thermoluminescence spectra provide positive identification regarding to the provenance (geographic origin) of the original Turkish purple jade (turkiyenite). - Highlights: ► The purple-colored gem material is only found in the Harmancık-Bursa region of Turkey. ► Material is called “Turkish purple

Fabrication and characterization of an all-solid tellurite-phosphate photonic bandgap fiber.

Science.gov (United States)

Cheng, Tonglei; Sakai, Yukiko; Suzuki, Takenobu; Ohishi, Yasutake

2015-05-01

We present an all-solid tellurite-phosphate photonic bandgap fiber (PBGF) with two layers of high-index rods (TeO2-Li2O-WO3-MoO3-Nb2O5, TLWMN) in the cladding (TeO2-ZnO-Li2O-K2O-Al2O3-P2O5, TZLKAP). TLWMN and TZLKAP glasses have good compatibility for fabricating the all-solid PBGF. Photonic bandgap (PBG) properties are calculated by the plane wave expansion method (PWM), and the results agree well with the measured transmission spectrum. Furthermore, the modal field patterns are measured at ∼1300 and 1520 nm, respectively. The light is confined to the core at ∼1300  nm and lost in the cladding at ∼1520  nm, which match well with the calculated modal field intensities.

Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

International Nuclear Information System (INIS)

Jin, Hui; Gui, Rijun; Sun, Jie; Wang, Yanfeng

2016-01-01

Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn"2"+:ZnS quantum dots (QDs) with MoS_2 QDs and photosensitive nitric oxide (NO) donors (Fe_4S_3(NO)_7"−, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn"2"+:ZnS QDs, but it produced almost no impact on the TPEPL of MoS_2 QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R"2 = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

Bandgap Engineering of Double Perovskites for One- and Two-photon Water Splitting

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

2013-01-01

Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46...... stable cubic perovskites which was found to have a finite bandgap in a previous screening-study. The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design...... rules on how to combine two cubic perovskites to generate a new combination with a larger or smaller bandgap compared with the constituent structures. Those rules are based on the type of orbitals involved in the conduction bands and on the size of the two cubic bandgaps. We also see that a change...

Preparation and photoluminescence properties of Mn2+-activated M2Si5N8 (M = Ca, Sr, Ba) phosphors

NARCIS (Netherlands)

Duan, C.J.; Otten, W.M.; Delsing, A.C.A.; Hintzen, H.T.J.M.

2008-01-01

Mn2+-doped M2Si5N8 (M=Ca, Sr, Ba) phosphors have been prepared by a solid-state reaction method at high temperature and their photoluminescence properties were investigated. The Mn2+-activated M2Si5N8 phosphors exhibit narrow emission bands in the wavelength range of 500–700 nm with peak center at

Photoluminescence properties of LiF bismuth silicate glass

Science.gov (United States)

Krishnan, M. Laya; Kumar, V. V. Ravi Kanth

2018-04-01

The sample (60-X) Bi2O3-30SiO2-XLiF where X=10, 15, 25 were prepared by conventional melt quenching method. X-ray diffraction pattern conformed the amorphous nature of the prepared sample and a broad peak at 2θ=30°. The Raman spectra confirmed that the Bi can exist both network former (BiO3 pyramidal) and network modifier (BiO6 octahedral)in the glass matrix. The samples showing broad absorption at 470nm is due to the presence of Bi2+ ions, because of increasing optical basicity the absorption edge of the sample is blue shifted. The photoluminescence spectra of the glass under 350nm excitation are showing two main peaks at 430nm and 630 nm due to Bi3+ and Bi2+ respectively and 25 LBS glass showing yellow, 15LBS showing near bluish white and 10LBS showing blue luminescence. The color purity and correlated color temperature are also calculated.

Liquid Crystal photonic Bandgap Fiber Devices

DEFF Research Database (Denmark)

Wei, Lei

In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

Science.gov (United States)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Photoluminescence inhomogeneity and excitons in CVD-grown monolayer WS2

Science.gov (United States)

Ren, Dan-Dan; Qin, Jing-Kai; Li, Yang; Miao, Peng; Sun, Zhao-Yuan; Xu, Ping; Zhen, Liang; Xu, Cheng-Yan

2018-06-01

Transition metal dichalcogenides two-dimensional materials are of great importance for future electronic and optoelectronic applications. In this work, triangular WS2 monolayers with size up to 130 μm were prepared via chemical vapor deposition method. WS2 monolayers presented uniform Raman intensity, while quenched photoluminescence (PL) was observed in the center. The PL quenching in the central part of WS2 monolayer flakes was attributed to the gradually increasing sulfur vacancies toward the center. The proportion of negative trion (X-) in PL spectrum increases with increasing sulfur vacancies in WS2. The enhanced binding energy of X- suggests higher Fermi level and n-doping level with larger sulfur vacancy concentration. Our findings may be beneficial to the development of integrated devices, and also explore the defect-induced optical and electrical properties for nanophotonics.

Photoluminescence properties of white light emitting La2O3:Dy3+ nanocrystals

Science.gov (United States)

Reenabati Devi, Konsam; Dorendrajit Singh, Shougaijam; David Singh, Th.

2018-01-01

White light emitting nanocrystalline La2O3:Dy3+ phosphors with different concentration (0.5-2 at.%) were synthesized by simple precipitation method. X-ray diffraction (XRD) pattern indicates all the samples crystallizes in the hexagonal phase. Average crystallite sizes of the samples calculated from XRD data were found to be in the range of 20-55 nm. Transmission electron microscopy, selected area electron diffraction, energy dispersive analysis of X-ray and photoluminescence (PL) of the samples are also reported. Strong PL excitation peak due to charge transfer band was observed at 230 nm. Photoluminescence emission peaks observed at 486 and 575 nm were probably attributed to 4F9/2-6H15/2 and 4F9/2-6H13/2 of Dy3+ ions respectively. Optimum luminescence intensity is found at 1 at.% Dy3+ doped La2O3 sample. Further, Commission Internationale de l'é clairage (CIE, 1931) co-ordinates and correlated color temperature (CCT) of the doped sample were calculated to investigate the phosphors' performance and technical applicability of the emitted light respectively. CCT of the 0.5 and 1 at.% samples is 5894 K (white light), within the range of vertical daylight, which makes the synthesised samples promising nanophosphor and may find application in simulating vertical daylight of the Sun.

Water-Dependent Photonic Bandgap in Silica Artificial Opals

OpenAIRE

Gallego-Gomez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; Lopez, Cefe

2011-01-01

Some characteristics of silica-based structuresa-like the photonic properties of artificial opals formed by silica spheresa-can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is partic...

Electronic structure characterization and bandgap engineeringofsolar hydrogen materials

Energy Technology Data Exchange (ETDEWEB)

Guo, Jinghua

2007-11-01

Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe{sub 2}O{sub 3} and ZnO.

Copper-organic/octamolybdates: structures, bandgap sizes, and photocatalytic activities.

Science.gov (United States)

Luo, Lan; Lin, Haisheng; Li, Le; Smirnova, Tatyana I; Maggard, Paul A

2014-04-07

The structures, optical bandgap sizes, and photocatalytic activities are described for three copper-octamolybdate hybrid solids prepared using hydrothermal methods, [Cu(pda)]4[β-Mo8O26] (I; pda = pyridazine), [Cu(en)2]2[γ-Mo8O26] (II; en = ethylenediamine), and [Cu(o-phen)2]2[α-Mo8O26] (III; o-phen = o-phenanthroline). The structure of I consists of a [Cu(pda)]4(4+) tetramer that bridges to neighboring [β-Mo8O26](4-) octamolybdate clusters to form two-dimensional layers that stack along the a axis. The previously reported structures of II and III are constructed from [Cu2(en)4Mo8O26] and [Cu2(o-phen)4Mo8O26] clusters. The optical bandgap sizes were measured by UV-vis diffuse reflectance techniques to be ∼1.8 eV for I, ∼3.1 eV for II, and ∼3.0 eV for III. Electronic structure calculations show that the smaller bandgap size of I originates primarily from an electronic transition between the valence and conduction band edges comprised of filled 3d(10) orbitals on Cu(I) and empty 4d(0) orbitals on Mo(VI). Both II and III contain Cu(II) and exhibit larger bandgap sizes. Accordingly, aqueous suspensions of I exhibit visible-light photocatalytic activity for the production of oxygen at a rate of ∼90 μmol O2 g(-1) h(-1) (10 mg samples; radiant power density of ∼1 W/cm(2)) and a turnover frequency per calculated surface [Mo8O26](4-) cluster of ∼36 h(-1). Under combined ultraviolet and visible-light irradiation, I also exhibits photocatalytic activity for hydrogen production in 20% aqueous methanol of ∼316 μmol H2 g(-1) h(-1). By contrast, II decomposed during the photocatalysis measurements. The molecular [Cu2(o-phen)4(α-Mo8O26)] clusters of III dissolve into the aqueous methanol solution under ultraviolet irradiation and exhibit homogeneous photocatalytic rates for hydrogen production of up to ∼8670 μmol H2·g(-1) h(-1) and a turnover frequency of 17 h(-1). The clusters of III can be precipitated out by evaporation and redispersed into solution with

Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Dang Chien, Nguyen

2014-01-01

Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors

Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

Science.gov (United States)

Hoglund, Linda; Ting, David Z.; Khoshakhlagh, Arezou; Soibel, Alexander; Hill, Cory J.; Fisher, Anita; Keo, Sam; Gunapala, Sarath D.

2014-01-01

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

Carrier and polarization dynamics in monolayer MoS2: temperature and power dependence

Science.gov (United States)

Urbaszek, Bernhard; Lagarde, D.; Bouet, L.; Amand, T.; Marie, X.; Zhu, C. R.; Liu, B. L.; Tan, P. H.

2014-03-01

In monolayer (ML) MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical k-valley initialization. Here we present the first time resolved photoluminescence (PL) polarization measurements in MoS2 MLs, providing vital information on the electron valley dynamics. Using quasi-resonant excitation of the A-exciton transitions, we can infer that the PL decays within τ ~= 4ps. The PL polarization of Pc ~ 60 % remains nearly constant in time for experiments from 4K - 300K, a necessary condition for the success of future Valley Hall experiments. τ does not vary significantly over this temperature range. This is surprising when considering the decrease of Pc in continuous wave experiments when going from 4K to 300K reported in the literature. By tuning the laser following the shift of the A-exciton resonance with temperature we are able to recover at 300K ~ 80 % of the polarization observed at 4K. For pulsed laser excitation, we observe a decrease of Pc with increasing laser power at all temperatures.

Multi-fidelity machine learning models for accurate bandgap predictions of solids

International Nuclear Information System (INIS)

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

2016-01-01

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelity quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.

Ultraviolet photoluminescence in Gd-doped silica and phosphosilicate fibers

Directory of Open Access Journals (Sweden)

Y. Wang

2017-04-01

Full Text Available Optical fiber lasers operating in the near infrared and visible spectral regions have relied on the spectroscopic properties of rare earth ions such as Yb3+, Er3+, Tm3+, Nd3+, and Sm3+. Here, we investigate Gd3+ doping in phosphosilicate and pure silica fibers using solution doping and sol-gel techniques, respectively, for potential applications in the ultraviolet. Photoluminescence spectra for optical fiber bundles and fiber preforms were recorded and compared. Emissions at 312 nm (phosphosilicate and 314 nm (pure silica were observed when pumping to the Gd3+ 6DJ, 6IJ, and 6PJ = 5/2, 3/2 energy levels. Oxygen deficient center was observed in solution doping sample with a wide absorption band centered at around 248 nm not affecting pumping to 6IJ states.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Energy Technology Data Exchange (ETDEWEB)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

2016-06-16

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Directory of Open Access Journals (Sweden)

Yanfei Lv

2018-05-01

Full Text Available Tungsten disulfide (WS2 monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2.

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

The photoluminescence of Co-Al-layered double hydroxide

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

We report a new optical behaviour of pure Co-Al-layered double hydroxide (LDH). It was found that the Co-Al-LDH sample could emit fluorescence without any fluorescent substances intercalated. Its excitation spectrum shows a maximum peak near the wavelength 370 nm, the maximum emission peak appears at 430 nm and the photoluminescence colour of the Co-Al-LDH sample is blue. This new optical property will be expected to extend the potential applications of LDHs in optical materials field.

In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications.

Science.gov (United States)

Dai, Jun; Ma, Liang; Ju, Minggang; Huang, Jinsong; Zeng, Xiao Cheng

2017-08-16

Double perovskites in the form of A 2 B'B''X 6 (A = Cs, B' = Ag, B'' = Bi) have been reported as potential alternatives to lead-containing organometal trihalide perovskites. However, all double perovskites synthesized to date exhibit indirect bandgaps >1.95 eV, which are undesirable for photovoltaic and optoelectronic applications. Herein, we report a comprehensive computer-aided screening of In- and Ga-based double perovskites for potential photovoltaic applications. To this end, several preconditions are implemented for the screening of optimal candidates, which include structural stability, electronic bandgaps, and optical absorption. Importantly, four In- and Ga-based double perovskites are identified to possess direct bandgaps within the desirable range of 0.9-1.6 eV for photovoltaic applications. Dominant optical absorption of the four double perovskites is found to be in the UV range. The structural and thermal stability of the four double perovskites are examined using both the empirical Goldschmidt ratio and convex-hull calculations. Only Cs 2 AgInBr 6 is predicted to be thermodynamically stable.

Photoluminescence of rare-earth-doped Ca4Ga2S7

International Nuclear Information System (INIS)

Tagiev, B.G.; Tagiev, O.B.; Dzhabbarov, R.B.; Musaeva, N.N.; Kasumov, U.F.

2001-01-01

One obtained Ca 4 Ga 2 S 7 :REM crystals and studied their photoluminescent (PL) properties. One used Nd, Ce, Pr and Tb as promoters. It is shown that in all investigated crystals one observed PL intensity maximums at λ 543 nm that result from intracentre transitions of Nd 3+ ions. The excitation energy is effectively transferred nonradiatingly from Ce 3+ , Pr 3+ , Tb 3+ ions to Nd 3+ ion. In the case, Ce 3+ , Pr 3+ , Tb 3+ are the effective ions-sensitizers [ru

Aluminum doping of CuInSe{sub 2} synthesized by solution process and its effect on structure, morphology, and bandgap tuning

Energy Technology Data Exchange (ETDEWEB)

Yan, Zhi; Deng, Weizhi; Zhang, Xia; Yuan, Qian; Deng, Peiran; Sun, Lei [Material Engineering College, Shanghai University of Engineering Science (China); Liang, Jun [School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen University Town (China)

2014-11-15

Al-doped CuInSe{sub 2} material is prepared by a low-cost wet chemical process. The key properties of Al-doped CuInSe{sub 2} as a successful solar cell material are investigated, such as crystal structure, morphology, optical properties, and bandgap. In situ X-ray diffraction measurements indicate that the doping of Al has induced noticeable lattice distortion. The material shows excellent thermal stability up to 600 C annealing temperature. By increasing the Al-doping concentration, the crystal unit-cell parameter of the material becomes smaller and the change of crystal structure leads to an increase of the grain size and surface roughness. The bandgap of Al-doped CuInSe{sub 2} can be continuously tuned in a range of 1.07-1.67 eV as Al/(Al + In) content ratio varies from 0 to 0.49. Finally, the effect mechanism on the properties of CuInSe{sub 2} after Al doping is discussed based on the ionic radius, crystal structure, and bonding state. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

Science.gov (United States)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Photonic bandgap narrowing in conical hollow core Bragg fibers

Energy Technology Data Exchange (ETDEWEB)

Ozturk, Fahri Emre; Yildirim, Adem; Kanik, Mehmet [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Bayindir, Mehmet, E-mail: bayindir@nano.org.tr [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Department of Physics, Bilkent University, 06800 Ankara (Turkey)

2014-08-18

We report the photonic bandgap engineering of Bragg fibers by controlling the thickness profile of the fiber during the thermal drawing. Conical hollow core Bragg fibers were produced by thermal drawing under a rapidly alternating load, which was applied by introducing steep changes to the fiber drawing speed. In conventional cylindrical Bragg fibers, light is guided by omnidirectional reflections from interior dielectric mirrors with a single quarter wave stack period. In conical fibers, the diameter reduction introduced a gradient of the quarter wave stack period along the length of the fiber. Therefore, the light guided within the fiber encountered slightly smaller dielectric layer thicknesses at each reflection, resulting in a progressive blueshift of the reflectance spectrum. As the reflectance spectrum shifts, longer wavelengths of the initial bandgap cease to be omnidirectionally reflected and exit through the cladding, which narrows the photonic bandgap. A narrow transmission bandwidth is particularly desirable in hollow waveguide mid-infrared sensing schemes, where broadband light is coupled to the fiber and the analyte vapor is introduced into the hollow core to measure infrared absorption. We carried out sensing simulations using the absorption spectrum of isopropyl alcohol vapor to demonstrate the importance of narrow bandgap fibers in chemical sensing applications.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

Science.gov (United States)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Aptamer and 5-fluorouracil dual-loading Ag2S quantum dots used as a sensitive label-free probe for near-infrared photoluminescence turn-on detection of CA125 antigen.

Science.gov (United States)

Jin, Hui; Gui, Rijun; Gong, Jun; Huang, Wenxue

2017-06-15

In this article, Ag 2 S quantum dots (QDs) were prepared by a facile aqueous synthesis method, using thiourea as a new sulfur precursor. Based on electrostatic interactions, 5-fluorouracil (5-Fu) was combined with the aptamer of CA125 antigen to fabricate aptamer/5-Fu complex. The surface of as-prepared Ag 2 S QDs was modified with polyethylenimine, followed by combination with the aptamer/5-Fu complex to form Ag 2 S QDs/aptamer/5-Fu hybrids. During the combination of Ag 2 S QDs with aptamer/5-Fu complex, near-infrared (NIR) photoluminescence (PL) of QDs (peaked at 850nm) was markedly reduced under excitation at 625nm, attributed to photo-induced electron transfer from QDs to 5-Fu. However, the addition of CA125 induced obvious NIR PL recovery, which was ascribed to the strong binding affinity of CA125 with its aptamer, and the separation of aptamer/5-Fu complex from the surface of QDs. Hence, the Ag 2 S QDs/aptamer/5-Fu hybrids were developed as a novel NIR PL turn-on probe of CA125. In the concentration range of [CA125] from 0.1 to 10 6 ngmL -1 , there were a good linear relationship between NIR PL intensities of Ag 2 S QDs and Log[CA125], and a low limit of detection of 0.07ngmL -1 . Experimental results revealed the highly selective and sensitive NIR PL responses of this probe to CA125, over other potential interferences. In real human body fluids, this probe also exhibited superior analytical performance, together with high detection recoveries. Copyright © 2016 Elsevier B.V. All rights reserved.

Diversity of band gap and photoluminescence properties of lead halide perovskite: A halogen-dependent spectroscopic study

Science.gov (United States)

Yu, Wenlei; Jiang, Yunfeng; Zhu, Xiuwei; Luo, Chunhua; Jiang, Kai; Chen, Liangliang; Zhang, Juan

2018-05-01

The effects of halogen substitution on microstructure, optical absorption, and phonon modes for perovskite CH3NH3PbX3 (MAPbX3, X = I/Br/Cl) films grown on FTO substrates have been investigated. The X-ray diffraction analysis exhibited good crystallization, and the strong diffraction peak assigned to (1 0 0) c for X = Br/Cl shifted toward a higher angle compared to (1 1 0) t of MAPbI3. Band-gap tuning from 1.63 to 2.37 to 3.11 eV in the I-Br-Cl series can be found due to the halogen effects. These energy values closely match the positions of peak determined from photoluminescence experiments. The remarkable absorption dip and emission peak appear for the MAPbBr3, suggesting higher crystallinity under the same preparation conditions. The wavenumbers of main IR-vibrations slightly decrease with ionic radius of the halogen increasing (in the order of Cl-Br-I), which related to the increasing polarizability. These results provide important progress towards the understanding of the halide role in the realization of high performance MAPbX3-based solar cells.

Low temperature synthesis of Zn{sub 2}GeO{sub 4} nanorods and their photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Tsai, Meng-Yen [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Perng, Tsong-Pyng, E-mail: tpperng@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Department of Chemical Engineering and Materials Science, Yuan Ze University, Chungli 320, Taiwan (China)

2013-04-15

Zn{sub 2}GeO{sub 4} nanorods were synthesized using a simple reflux method. The product with 0.05 M Zn{sub 2}GeO{sub 4} is an aggregation of short nanorods with the diameter ranging from 30 to 50 nm. If the Zn{sub 2}GeO{sub 4} molarity was increased, the nanorods became longer and aggregated as bundles. An intense white-bluish photoluminescence (PL) was observed from these nanorods, and the PL band can be dissolved into four Gaussian peaks that are associated with the native defects. Since the PL intensity of the nanorods is comparable to that of sintered particles, this reflux method provides a time- and energy-efficient route to prepare Zn{sub 2}GeO{sub 4} phosphor. -- Highlights: ► Zn{sub 2}GeO{sub 4} nanorods were prepared by a simple refluxing method at low temperature without any surfactants. ► The morphologies and crystal structures of Zn{sub 2}GeO{sub 4} growth were studied from beginning to the end (0 min to 3 h). ► The photoluminescence of Zn{sub 2}GeO{sub 4} synthesized by different methods was studied.

Influence of structural defects on excitonic photoluminescence of pentacene

International Nuclear Information System (INIS)

Piryatins'kij, Yu.P.; Kurik, M.V.

2011-01-01

The exciton reflection, absorption, and photoluminescence spectra for single crystals and polycrystalline films have been studied in the temperature range of 4.2-296 K. A significant influence of structural defects arising during phase transitions on the exciton spectra of pentacene has been detected. The mechanisms of photoluminescence in single crystals and crystalline films of pentacene have been considered.

Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

International Nuclear Information System (INIS)

Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

2012-01-01

Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

Correlation of Photocatalysis and Photoluminescence Effect in Relation to the Surface Properties of TiO2:Tb Thin Films

Directory of Open Access Journals (Sweden)

Damian Wojcieszak

2013-01-01

Full Text Available In this paper structural, optical, photoluminescence, and photocatalytic properties of TiO2 and TiO2:(2.6 at. % Tb thin films have been compared. Thin films were prepared by high-energy reactive magnetron sputtering process, which enables obtaining highly nanocrystalline rutile structure of deposited films. Crystallites sizes were 8.7 nm and 6.6 nm for TiO2 and TiO2:Tb, respectively. Surface of prepared thin films was homogenous with small roughness of ca. 7.2 and 2.1 nm in case of TiO2 and TiO2:Tb samples, respectively. Optical properties measurements have shown that the incorporation of Tb into TiO2 matrix has not changed significantly the thin films transparency. It also enables obtaining photoluminescence effect in wide range from 350 to 800 nm, what is unique phenomenon in case of TiO2 with rutile structure. Moreover, it has been found that the incorporation of 2.6 at. % of Tb has increased the photocatalytic activity more than two times as compared to undoped TiO2. Additionally, for the first time in the current state of the art, the relationship between photoluminescence effect, photocatalytic activity, and surface properties of TiO2:Tb thin films has been theoretically explained.

Crystal orientation dependence of the optical bandgap of (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals

International Nuclear Information System (INIS)

Wan Xinming; Zhao Xiangyong; Chan, H.L.W.; Choy, C.L.; Luo Haosu

2005-01-01

The transmission spectra of rhombohedral 0.71Pb(Mg 1/3 Nb 2/3 )O 3 -0.29PbTiO 3 (PMN-0.29PT) and tetragonal PMN-0.38PT single crystals were obtained in the main crystallographic directions , and . The absorption coefficients were computed and the optical bandgaps were calculated in both direct and indirect transitions. The energy of phonons contributing in the indirect transition was also calculated. For PMN-0.38PT single crystal in all the three directions, the values of direct bandgaps E gd are all slightly lower than those of PMN-0.29PT single crystal, while the indirect bandgaps E gi are all higher. For different crystallographic directions, the values of E gi for -direction are lower compared with and directions, both for PMN-0.29PT and PMN-0.38PT single crystals. Some discussions about the B-site cation d-orbits and the O-anion 2p orbits that determine the basic energy level of the single crystals are presented. The optical transition mechanism was also discussed

Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures

KAUST Repository

Wang, Zhuo

2016-05-06

Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ~20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures

KAUST Repository

Wang, Zhuo; Dong, Zhaogang; Gu, Yinghong; Chang, Yung-Huang; Zhang, Lei; Li, Lain-Jong; Zhao, Weijie; Eda, Goki; Zhang, Wenjing; Grinblat, Gustavo; Maier, Stefan A.; Yang, Joel K. W.; Qiu, Cheng-Wei; Wee, Andrew T. S.

2016-01-01

Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ~20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

Graded band-gap engineering for increased efficiency in CZTS solar cells

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-02-01

In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9% is recorded for the optimized solar cell with a relative improvement of 92%, compared with the reference cell efficiency of 8.8%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889 mV, a short-circuit current of 28.5 mA and a fill factor of 66%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.

A new strategy for synthesizing AgInS2 quantum dots emitting brightly in near-infrared window for in vivo imaging

DEFF Research Database (Denmark)

Tan, Lianjiang; Liu, Shuiping; Li, Xiaoqiang

2015-01-01

A new strategy for fabricating water-dispersible AgInS2 quantum dots (QDs) with bright near-infrared (NIR) emission is demonstrated. A type of multidentate polymer (MDP) was synthesized and utilized as a compact capping ligand for the AgInS2 QDs. Using silver nitrate, indium acetate and sulfur-hy...... cytotoxicity. Nude mice photoluminescence imaging shows that the MDP-capping AgInS2 QDs can be well applied to in vivo imaging. These readily prepared NIR fluorescent nanocrystals have huge potential for biomedical applications....

Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

International Nuclear Information System (INIS)

Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

2005-01-01

Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

Photoluminescence study in solid solutions of CdMgMnTe semimagnetic semiconductors

International Nuclear Information System (INIS)

Kusraev, Yu.G.; Averkieva, G.K.

1993-01-01

Luminescence and resonant Raman scattering in quaternary solid solutions of CdMgMnTe semimagnetic semiconductors are investigated. It is shown that the intensity and position of the luminescence band, conditioned by the 4 T 1 --> 6 A 1 optical transitions in the Mn d-shell, depend on the local crystal environment. Temperature variations of the photoluminescence spectra are interpreted on the base of a model of electron excitation energy transport from Mn 2+ to different recombination centers. In the resonant Raman scattering spectrum were observed three longitudinal vibrational modes with energies near to phonon energies of corresponding binary compounds

Defect-mediated photoluminescence up-conversion in cadmium sulfide nanobelts (Conference Presentation)

Science.gov (United States)

Morozov, Yurii; Kuno, Masaru K.

2017-02-01

The concept of optical cooling of solids has existed for nearly 90 years ever since Pringsheim proposed a way to cool solids through the annihilation of phonons via phonon-assisted photoluminescence (PL) up-conversion. In this process, energy is removed from the solid by the emission of photons with energies larger than those of incident photons. However, actually realizing optical cooling requires exacting parameters from the condensed phase medium such as near unity external quantum efficiencies as well as existence of a low background absorption. Until recently, laser cooling has only been successfully realized in rare earth doped solids. In semiconductors, optical cooling has very recently been demonstrated in cadmium sulfide (CdS) nanobelts as well as in hybrid lead halide perovskites. For the former, large internal quantum efficiencies, sub-wavelength thicknesses, which decrease light trapping, and low background absorption, all make near unity external quantum yields possible. Net cooling by as much as 40 K has therefore been possible with CdS nanobelts. In this study, we describe a detailed investigation of the nature of efficient anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature-dependent PL up-conversion and optical absorption studies on individual NBs together with frequency-dependent up-converted PL intensity spectroscopies suggest that ASPL in CdS nanobelts is defect-mediated through involvement of defect levels below the band gap.

Photoluminescence of Diamondoid Crystals

Energy Technology Data Exchange (ETDEWEB)

Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

2012-04-03

The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

KAUST Repository

Yandjah, L.

2018-04-03

Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.

Aqueous synthesis of high bright Ag{sub 2}Se−ZnSe quantum dots with tunable near-infrared emission

Energy Technology Data Exchange (ETDEWEB)

Che, Dongchen; Ding, Di [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Wang, Hongzhi, E-mail: wanghz@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Zhang, Qinghong [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Li, Yaogang, E-mail: yaogang_li@dhu.edu.cn [Engineering Research Center of Advanced Glass Manufacturing Technology, Ministry of Education, Donghua University, Shanghai 201602 (China)

2016-09-05

Efficient aqueous synthetic methods for near-infrared quantum dots as bioimaging agents are urgently required. In this work, a simple and fast synthesis of highly luminescent, near-infrared Ag{sub 2}Se quantum dots (QDs) in aqueous media is reported. The method avoids high temperature, pressure and organic solvents to directly generate water-dispersible Ag{sub 2}Se QDs. The photoluminescence emission of Ag{sub 2}Se QDs ranges from 835 to 940 nm by different Ag:Se molar ratio. Using the ZnSe as a shell, the quantum yield reaches up to 42%. The Ag{sub 2}Se−ZnSe QDs with high quantum yield, near-infrared and low cytotoxic could be used as good cell labels, showing great potential applications in bio-imaging. - Highlights: • Ag{sub 2}Se−ZnSe nanocrystals are prepared directly in aqueous media at low temperature. • Ag{sub 2}Se−ZnSe nanocrystals show excellent water solubility and colloidal stability. • Ag{sub 2}Se nanocrystals exhibit tunable near-infrared emission with ultrasmall size. • Ag{sub 2}Se−ZnSe nanocrystals show high quantum yield with low cytotoxicity. • Ag{sub 2}Se−ZnSe nanocrystals are stable over a month at room temperature in the air.

Red photoluminescent property and modification of WO3:Eu3+ inverse opal for blue light converted LEDs

Science.gov (United States)

Ruan, Jiufeng; Yang, Zhengwen; Huang, Anjun; Chai, Zhuangzhuang; Qiu, Jianbei; Song, Zhiguo

2018-01-01

Blue light converted light-emitting diodes is of great significance as a candidate for next generation lighting. In this work, the WO3:Eu3+ inverse opal photonic crystals were prepared and their luminescence properties were studied. The results demonstrated that the main excitation peak of WO3:Eu3+ inverse opals were located at 465 nm. The red luminescence peak at the 613 nm was observed in the WO3:Eu3+ inverse opal upon 465 nm excitation, exhibiting better red color purity. The influence of photonic band gap on the photoluminescence of WO3:Eu3+ inverse opal was obtained. When the red luminescence peak is in the regions of the photonic band gap and the edge of the band-gap, the red luminescence suppression and enhancement was observed respectively. The WO3:Eu3+ inverse opals may be a promising candidate for the blue light converted LEDs.

Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

2015-06-01

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

Anomalous band-gap bowing of AlN1−xPx alloy

International Nuclear Information System (INIS)

Winiarski, M.J.; Polak, M.; Scharoch, P.

2013-01-01

Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

Tensile strain induced narrowed bandgap of TiO{sub 2} films: Utilizing the two-way shape memory effect of TiNiNb substrate and in-situ mechanical bending

Energy Technology Data Exchange (ETDEWEB)

Du, Minshu, E-mail: dms1223@126.com [Department of Materials Science and Engineering, China University of Petroleum at Beijing, Beijing, 102249 (China); Center for Electrochemistry, Department of Chemistry, The University of Texas at Austin, Austin, Texas, 78712 (United States); Cui, Lishan; Wan, Qiong [Department of Materials Science and Engineering, China University of Petroleum at Beijing, Beijing, 102249 (China)

2016-05-15

Graphical abstract: - Highlights: • Imposed tensile strain to anatase TiO{sub 2} nanofilm by using the two-way shape memory effect of NiTiNb substrate. • Imposed tensile strain to rutile TiO{sub 2} thin film by in-situ mechanical bending. • Tauc plot based on the PEC-tested auction spectrum was utilized to precisely determine the bandgap of TiO{sub 2}. • Tensile strain narrowed the bandgap of anatase TiO{sub 2} by 60 meV and rutile TiO{sub 2} by 70 meV. • Tensile strain contributes to a 1.5 times larger photocurrent for the water oxidation reaction. - Abstract: Elastic strain is one of the methods to alter the band gap of semiconductors. However, relevant experimental work is limited due to the difficulty in imposing strain. Two new methods for imposing tensile strain to TiO{sub 2} film were introduced here. One is by utilizing the two-way shape memory effect of NiTiNb substrate, and the other method is in-situ mechanical bending. The former method succeeded in imposing 0.4% tensile strain to anatase TiO{sub 2} nanofilm, and strain narrowed the bandgap of TiO{sub 2} by 60 meV. The latter method enabled rutile TiO{sub 2} thin film under the 0.5% biaxially tensile-strained state, which contributes to a narrowed bandgap with ΔE{sub g} of 70 meV. Also, photocurrents of both strained TiO{sub 2} films increased by 1.5 times compared to the strain-free films, which indirectly verified the previous DFT prediction proposed by Thulin and Guerra in 2008 that tensile strain could improve the mobility and separation of photo-excite carriers.

Er{sup 3+}-doped fluorotellurite thin film glasses with improved photoluminescence emission at 1.53 µm

Energy Technology Data Exchange (ETDEWEB)

Morea, R. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Fernandez, T.T. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Maté, B. [Instituto de Estructura de la Materia, CSIC, Serrano 121, 28006 Madrid (Spain); Ferrer, F.J. [Centro Nacional de Aceleradores, Univ. Sevilla-CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Maffiotte, C. [CIEMAT, Departamento de Tecnología, Av. Complutense 40, 28040 Madrid (Spain); Fernandez, J.; Balda, R. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Gonzalo, J., E-mail: j.gonzalo@csic.es [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain)

2016-02-15

Transparent oxyfluoride tellurite thin film glasses have been produced at room temperature by pulsed laser deposition in O{sub 2} atmosphere from an Er-doped TeO{sub 2}–ZnO–ZnF{sub 2} bulk glass. Thin film glasses present high refractive index (n≥1.95) and good transparency (T≥80%) in the visible (λ>400 nm) and near infrared range. However, their photoluminescence (PL) performance at 1.5 μm is poor. Thermal annealing at moderate temperatures (T≤315 °C), well below glass crystallization, increases the PL intensity by more than one order of magnitude as well as the PL lifetime up to τ≈3.3 ms. Film glasses present a larger fraction of TeO{sub 3} trigonal pyramids than the bulk glass and a very large OH{sup −} content. The structure and composition of film glasses do not change upon annealing and thus the activation of the PL response is related to the improvement of the surface morphology and the significant decrease of their OH{sup −} content. - Highlights: • Transparent Er-doped fluorotellurite films are produced by pulsed laser deposition. • Post-deposition thermal treatments are required to activate Er{sup 3+} photoluminescence. • {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} emission spectrum is similar for bulk and annealed film glasses. • {sup 4}I{sub 13/2} level fluorescence decay is shorter in annealed films than in bulk glasses. • Photoluminescence response relates to hydroxyl groups concentration in film glasses.

Photoluminescence, trap states and thermoluminescence decay ...

Indian Academy of Sciences (India)

Administrator

Photoluminescence, trap states and thermoluminescence decay process study of Ca2MgSi2O7 : Eu. 2+. , Dy. 3+ phosphor. RAVI SHRIVASTAVA*, JAGJEET KAUR, VIKAS DUBEY and BEENA JAYKUMAR. Govt. VYT PG Autonomous College, Durg 491 001, (C.G.) India. MS received 9 July 2013; revised 5 December 2013.

Magnetization-induced enhancement of photoluminescence in core-shell CoFe{sub 2}O{sub 4}@YVO{sub 4}:Eu{sup 3+} composite

Energy Technology Data Exchange (ETDEWEB)

Jia, Yanmin, E-mail: ymjia@zjnu.edu.cn, E-mail: wuzheng@zjnu.cn; Zhou, Zhihua; Wei, Yongbin [Department of Physics, Zhejiang Normal University, Jinhua 321004 (China); Wu, Zheng, E-mail: ymjia@zjnu.edu.cn, E-mail: wuzheng@zjnu.cn; Chen, Jianrong [College of Geography and Environmental Sciences, Zhejiang Normal University, Jinhua 321004 (China); Zhang, Yihe [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Yongsheng [Department of Physics, Shanghai University of Electric Power, Shanghai 200090 (China)

2013-12-07

After the core-shell CoFe{sub 2}O{sub 4}@YVO{sub 4}:Eu{sup 3+} composite synthesized through a facile sol-gel method was magnetized under an external magnetic field of 0.25 T for 4 h, an enhancement of ∼56% in photoluminescence intensity was observed. The remanent magnetization of the CoFe{sub 2}O{sub 4} core increases the intensity of the excited charge transfer transition of VO{sub 4}{sup 3−} group in YVO{sub 4}:Eu{sup 3+} shell, which may enhance the probability related to the Eu{sup 3+} radiative transition {sup 5}D{sub 0}-{sup 7}F{sub 2}, yielding to a high photoluminescence. The obvious remanent-magnetization-induced enhancement in photoluminescence is helpful in developing excellent magnetic/luminescent material for the practical display devices.

Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

Energy Technology Data Exchange (ETDEWEB)

Jin, Hui [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Gui, Rijun, E-mail: guirijun@qdu.edu.cn [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Sun, Jie; Wang, Yanfeng [Institute of Materia Medica, Shandong Academy of Medical Sciences, Jinan 250062 (China)

2016-05-30

Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn{sup 2+}:ZnS quantum dots (QDs) with MoS{sub 2} QDs and photosensitive nitric oxide (NO) donors (Fe{sub 4}S{sub 3}(NO){sub 7}{sup −}, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn{sup 2+}:ZnS QDs, but it produced almost no impact on the TPEPL of MoS{sub 2} QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R{sup 2} = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

Ultrasonic bandgaps in 3D-printed periodic ceramic microlattices

Czech Academy of Sciences Publication Activity Database

Kruisová, Alena; Ševčík, Martin; Seiner, Hanuš; Sedlák, Petr; Román-Manso, B.; Miranzo, P.; Belmonte, M.; Landa, Michal

January (2018), s. 91-100 ISSN 0041-624X R&D Projects: GA ČR GA17-01618S Institutional support: RVO:61388998 Keywords : phononic crystals * ceramic s * additive manufacturing * bandgaps * wave propagation * finite elements method Subject RIV: BI - Acoustics OBOR OECD: Applied mechanics Impact factor: 2.327, year: 2016 http://dx.doi.org/10.1016/j.ultras.2017.07.017

Energy level alignment and sub-bandgap charge generation in polymer:fullerene bulk heterojunction solar cells.

Science.gov (United States)

Tsang, Sai-Wing; Chen, Song; So, Franky

2013-05-07

Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This minimum required energy for sub-bandgap charge genreation is defined as the effective bandgap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser post-processing of halide perovskites for enhanced photoluminescence and absorbance

Science.gov (United States)

Tiguntseva, E. Y.; Saraeva, I. N.; Kudryashov, S. I.; Ushakova, E. V.; Komissarenko, F. E.; Ishteev, A. R.; Tsypkin, A. N.; Haroldson, R.; Milichko, V. A.; Zuev, D. A.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid halide perovskites have emerged as one of the most promising type of materials for thin-film photovoltaic and light-emitting devices. Further boosting their performance is critically important for commercialization. Here we use femtosecond laser for post-processing of organo-metalic perovskite (MAPbI3) films. The high throughput laser approaches include both ablative silicon nanoparticles integration and laser-induced annealing. By using these techniques, we achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally 10-fold enhancement of absorbance in a perovskite layer with the silicon nanoparticles. Direct laser annealing allows for increasing of photoluminescence over 130%, and increase absorbance over 300% in near-IR range. We believe that the developed approaches pave the way to novel scalable and highly effective designs of perovskite based devices.

Effects of Sr2+ substitution on photoluminescence characteristics of Ba1−x−ySryZrSi3O9:xEu2+ phosphors

International Nuclear Information System (INIS)

Chiang, Chung-Hao; Gong, Syuan-Jhih; Lin, Han-Yu; Zhan, Ting-Shi; Chu, Sheng-Yuan

2014-01-01

In this work, single-phase Ba 1−x−y Sr y ZrSi 3 O 9 :xEu 2+ phosphors were synthesized via the solid-state reaction method. The crystal structure and luminescence properties were investigated using X-ray diffraction and photoluminescence measurements, respectively. An increase of the dopant Sr 2+ increased the emission intensity of the phosphors. The peak intensity of the samples was at y = 0.4 under near-ultraviolet light excitation (397 nm). The wavelength of the emission peaks red-shifts slightly from 477 to 483 nm due to the splitting of the 5d energy level. Sr 2+ ions have a smaller ionic radius than that of Ba 2+ ions, and thus the dopant changes the crystal structure, improving the energy transfer efficiency between luminescence centers. More Eu 2+ solid solubility was found in Ba 0.6−x Sr 0.4 ZrSi 3 O 9 :xEu 2+ phosphors (10 mol. %) than in the host BaZrSi 3 O 9 (6 mol. %), which enhanced the emission intensity. In addition, the thermal reliability of the phosphors was studied

Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

Science.gov (United States)

Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

2018-04-01

Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

Science.gov (United States)

Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

2002-02-01

Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

Photon management with index-near-zero materials

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhu; Yu, Zongfu [Department of Electrical and Computer Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Wang, Ziyu [Department of Foundation, Southeast University, Chengxian College, 210018 Nanjing (China)

2016-08-01

Index-near-zero materials can be used for effective photon management. They help to restrict the angle of acceptance, resulting in greatly enhanced light trapping limit. In addition, these materials also decrease the radiative recombination, leading to enhanced open circuit voltage and energy efficiency in direct bandgap solar cells.

Multi-cavity locally resonant structure with the low frequency and broad band-gaps

Directory of Open Access Journals (Sweden)

Jiulong Jiang

2016-11-01

Full Text Available A multi-cavity periodic structure with the characteristic of local resonance was proposed in the paper. The low frequency band-gap structure was comparatively analyzed by the finite element method (FEM and electric circuit analogy (ECA. Low frequency band-gap can be opened through the dual influence of the coupling’s resonance in the cavity and the interaction among the couplings between structures. Finally, the influence of the structural factors on the band-gap was analyzed. The results show that the structure, which is divided into three parts equally, has a broader effective band-gap below the frequency of 200 Hz. It is also proved that reducing the interval between unit structures can increase the intensity of the couplings among the structures. And in this way, the width of band-gap would be expanded significantly. Through the parameters adjustment, the structure enjoys a satisfied sound insulation effect below the frequency of 500Hz. In the area of low frequency noise reduction, the structure has a lot of potential applications.

Opto-electronics of PbS quantum dot and narrow bandgap polymer blends

NARCIS (Netherlands)

Kahmann, Simon; Mura, Andrea; Protesescu, Loredana; Kovalenko, Maksym V.; Brabec, Christoph J.; Loi, Maria A.

2015-01-01

Here we report on the interaction between the narrow bandgap polymer [2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta-[2,1-b;3,4-b]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) and lead sulphide (PbS) colloidal quantum dots (CQDs) upon photoexcitation. We show that the presence of both materials

Visible light photoreactivity from hybridization states between carbon nitride bandgap states and valence states in Nb and Ti oxides

Energy Technology Data Exchange (ETDEWEB)

Lee, Hosik, E-mail: hosiklee@gmail.com [School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Unist-gil 100 Eonyang-eup, Ulsan 689-798 (Korea, Republic of); Ohno, Takahisa, E-mail: OHNO.Takahisa@nims.go.jp [Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Material Science, 1-2-1 Sengen, Tsukuba (Japan); Computational Materials Science Unit (CMSU), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan)

2013-03-29

Highlights: ► Origin of bandgap reduction for visible photoreactivity is suggested. ► Carbon nitride adsorption in interlayer space can induce the bandgap reduction. ► The electronic structures are studied by density functional theory calculations. - Abstract: For better efficiency as photocatalysts, N-doping for visible light reactivity has been intensively studied in Lamellar niobic and titanic solid acids (HNb{sub 3}O{sub 8}, H{sub 2}Ti{sub 4}O{sub 9}), and its microscopic structures have been debated in this decade. We calculate the layered solid acids’ structures and bandgaps. Bandgap reduction by carbon nitride adsorption in interlayer space is observed computationally. It originates from localized nitrogen states which form delocalized top-valence states by hybridizing with the host oxygen states and can contribute to photo-current.

Photoluminescence of nanocrystals embedded in oxide matrices

International Nuclear Information System (INIS)

Estrada, C.; Gonzalez, J.A.; Kunold, A.; Reyes-Esqueda, J.A.; Pereyra, P.

2006-12-01

We used the theory of finite periodic systems to explain the photoluminescence spectra dependence on the average diameter of nanocrystals embedded in oxide matrices. Because of the broad matrix band gap, the photoluminescence response is basically determined by isolated nanocrystals and sequences of a few of them. With this model we were able to reproduce the shape and displacement of the experimentally observed photoluminescence spectra. (author)

Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

Science.gov (United States)

Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

Overcoming the Cut-Off Charge Transfer Bandgaps at the PbS Quantum Dot Interface

KAUST Repository

El-Ballouli, Ala'a O.

2015-11-17

Light harvesting from large size of semiconductor PbS quantum dots (QDs) with a bandgap of less than 1 eV is one of the greatest challenges precluding the development of PbS QD-based solar cells because the interfacial charge transfer (CT) from such QDs to the most commonly used electron acceptor materials is very inefficient, if it occurs at all. Thus, an alternative electron-accepting unit with a new driving force for CT is urgently needed to harvest the light from large-sized PbS QDs. Here, a cationic porphyrin is utilized as a new electron acceptor unit with unique features that bring the donor–acceptor components into close molecular proximity, allowing ultrafast and efficient electron transfer for QDs of all sizes, as inferred from the drastic photoluminescence quenching and the ultrafast formation of the porphyrin anionic species. The time-resolved results clearly demonstrate the possibility of modulating the electron transfer process between PbS QDs and porphyrin moieties not only by the size quantization effect but also by the interfacial electrostatic interaction between the positively charged porphyrin and the negatively charged QDs. This approach provides a new pathway for engineering QD-based solar cells that make the best use of the diverse photons making up the Sun\\'s broad irradiance spectrum.

Overcoming the Cut-Off Charge Transfer Bandgaps at the PbS Quantum Dot Interface

KAUST Repository

El-Ballouli, Ala'a O.; Alarousu, Erkki; Kirmani, Ahmad R.; Amassian, Aram; Bakr, Osman; Mohammed, Omar F.

2015-01-01

Light harvesting from large size of semiconductor PbS quantum dots (QDs) with a bandgap of less than 1 eV is one of the greatest challenges precluding the development of PbS QD-based solar cells because the interfacial charge transfer (CT) from such QDs to the most commonly used electron acceptor materials is very inefficient, if it occurs at all. Thus, an alternative electron-accepting unit with a new driving force for CT is urgently needed to harvest the light from large-sized PbS QDs. Here, a cationic porphyrin is utilized as a new electron acceptor unit with unique features that bring the donor–acceptor components into close molecular proximity, allowing ultrafast and efficient electron transfer for QDs of all sizes, as inferred from the drastic photoluminescence quenching and the ultrafast formation of the porphyrin anionic species. The time-resolved results clearly demonstrate the possibility of modulating the electron transfer process between PbS QDs and porphyrin moieties not only by the size quantization effect but also by the interfacial electrostatic interaction between the positively charged porphyrin and the negatively charged QDs. This approach provides a new pathway for engineering QD-based solar cells that make the best use of the diverse photons making up the Sun's broad irradiance spectrum.

Resonance interaction energy between two entangled atoms in a photonic bandgap environment.

Science.gov (United States)

Notararigo, Valentina; Passante, Roberto; Rizzuto, Lucia

2018-03-26

We consider the resonance interaction energy between two identical entangled atoms, where one is in the excited state and the other in the ground state. They interact with the quantum electromagnetic field in the vacuum state and are placed in a photonic-bandgap environment with a dispersion relation quadratic near the gap edge and linear for low frequencies, while the atomic transition frequency is assumed to be inside the photonic gap and near its lower edge. This problem is strictly related to the coherent resonant energy transfer between atoms in external environments. The analysis involves both an isotropic three-dimensional model and the one-dimensional case. The resonance interaction asymptotically decays faster with distance compared to the free-space case, specifically as 1/r 2 compared to the 1/r free-space dependence in the three-dimensional case, and as 1/r compared to the oscillatory dependence in free space for the one-dimensional case. Nonetheless, the interaction energy remains significant and much stronger than dispersion interactions between atoms. On the other hand, spontaneous emission is strongly suppressed by the environment and the correlated state is thus preserved by the spontaneous-decay decoherence effects. We conclude that our configuration is suitable for observing the elusive quantum resonance interaction between entangled atoms.

Synthesis of Zn{sub 3}(OH){sub 2}V{sub 2}O{sub 7}.nH{sub 2}O hierarchical nanostructures and their photoluminescence properties

Energy Technology Data Exchange (ETDEWEB)

Ni Shibing; Zhou Guo; Wang Xinghui; Sun Xiaolei; Yang Feng; Liu Yingqi [Department of Physics, Lanzhou University, Lanzhou 730000 (China); He Deyan, E-mail: hedy@lzu.edu.cn [Department of Physics, Lanzhou University, Lanzhou 730000 (China)

2010-04-15

The controlled synthesis of Zn{sub 3}(OH){sub 2}V{sub 2}O{sub 7}.nH{sub 2}O hierarchical structures has been successfully realized in a large scale via a simple hydrothermal method. It was demonstrated that the morphologies of the final products are significantly affected by the quantity of hexamethylenetetramine, reaction temperature and reaction time. Optimum amount of sodium sulfate plays a crucial role in the development of crystallinity of the products. The morphology evolvement and the growth mechanism were discussed, and sulfate induced oriented attachment and temperature facilitated Ostwald ripening process were proposed for the possible formation mechanism. The structure and morphology of those products were characterized by X-ray diffraction (XRD), Raman spectrum, field-emission scanning electron microscopy (FE-SEM) equipped with energy dispersion spectrum (EDS). Furthermore, the photoluminescence properties of those products were researched. Excellent visible light emission ranging from 400 to 700 nm was exhibited via room temperature photoluminescence (PL) measurement.

Highly stabilized and photoluminescence enhancement of ZnS:Mn2+ nanoparticles in biotin matrix

International Nuclear Information System (INIS)

Keshari, Ashish K.; Pandey, Avinash C.

2009-01-01

We synthesized the ZnS:Mn 2+ nanoparticles passivated by biocompatible layer, namely, biotin by chemical precipitation route and studied their temporal evolution for size, structure, optical, and photoluminescence stability. To monitor the structural and optoelectronic properties of the nanoparticles with time, we have characterized the grown product by x-ray diffraction, small angle x-ray scattering, UV visible, and photoluminescence spectroscopic techniques at a regular interval for a period of three months. Results showed that the properties of nanophosphors capped with biotin are remaining the same even after 3 months. Energy dispersive x-ray analysis of 3 month aged sample shows long time compatibility between ZnS:Mn 2+ nanoparticles and the biotin. This is also confirmed by electron microscopy that the growth of the nanoparticles is strongly arrested by the biotin. X-ray photoelectron spectra were also recorded to show the chemical state of the elements. Enhanced ratio of Zn 2p to Mn 2p peaks in the x-ray photoelectron spectra of ZnS:Mn 2+ nanoparticles shows that the Mn 2+ ions are incorporated within ZnS host matrix. We found that biotin capping will enhance the luminescence from ZnS:Mn 2+ nanoparticles as compared to without capped particles. Absence of biotin will gradually degrade the luminescence upon aging while drastic degradation in luminescence intensity was observed after annealing. Properties show that biotin also protected the nanoparticles from any environmental attack

Near-infrared InN quantum dots on high-In composition InGaN

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Photoluminescence studies on Eu doped TiO2 nanoparticles

International Nuclear Information System (INIS)

Ningthoujam, R.S.; Sudarsan, V.; Vatsa, R.K.; Kadam, R.M.; Jagannath; Gupta, A.

2009-01-01

Eu 3+ doped TiO 2 nanoparticles were prepared by urea hydrolysis in ethylene glycol medium at low temperature of 150 deg. C. X-ray diffraction study showed that anatase phase of tetragonal structure was formed below 500 deg. C; and above this temperature, additional peaks due to rutile phase were also observed. From luminescence study, it was found that as prepared nanoparticles showed the enhanced luminescence intensity due to energy transfer from host to europium ions. However, photoluminescence from these nanoparticles was found to disappear when the samples were heated above 900 deg. C. We established the origin of the reduction in the luminescence intensity from Eu 3+ when doped in TiO 2 and heated at 900 deg. C. Based on detailed studies at different heat-treatment temperatures using techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, electron paramagnetic resonance, Raman spectroscopy, and Moessbauer spectroscopy, it has been established that formation of Eu 2 Ti 2 O 7 phase, wherein Eu 3+ ions occupy high symmetric environment (D 3d ) and also reduced distance between Eu 3+ and Eu 3+ ions is responsible for the decrease/loss in the luminescence intensity.

Actively doped solid core Photonic Bandgap Fiber

DEFF Research Database (Denmark)

Broeng, Jes; Olausson, Christina Bjarnal Thulin; Lyngsøe, Jens Kristian

2010-01-01

Solid photonic bandgap fibers offer distributed spectral filtering with extraordinary high suppression. This opens new possibilities of artificially tailoring the gain spectrum of fibers. We present record-performance of such fibers and outline their future applications....

Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

International Nuclear Information System (INIS)

Lee, Ki-Won; Kim, Young-You

2004-01-01

In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

In situ enhancement of the blue photoluminescence of colloidal Ga2O3 nanocrystals by promotion of defect formation in reducing conditions.

Science.gov (United States)

Wang, Ting; Radovanovic, Pavle V

2011-07-07

We demonstrate redox control of defect-based photoluminescence efficiency of colloidal γ-Ga(2)O(3) nanocrystals. Reducing environment leads to an increase in photoluminescence intensity by enhancing the concentration of oxygen vacancies, while the blue emission is suppressed in oxidative conditions. These results enable optimization of nanocrystal properties by in situ defect manipulation. This journal is © The Royal Society of Chemistry 2011

Determination of band offsets at GaN/single-layer MoS2 heterojunction

KAUST Repository

Tangi, Malleswararao

2016-07-25

We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

Determination of band offsets at GaN/single-layer MoS2 heterojunction

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Hedhili, Mohamed N.; Janjua, Bilal; Alias, Mohd Sharizal; Anjum, Dalaver H.; Tseng, Chien-Chih; Shi, Yumeng; Joyce, Hannah J.; Li, Lain-Jong; Ooi, Boon S.

2016-01-01

We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

Hydrothermal synthesis of core–shell TiO_2 to enhance the photocatalytic hydrogen evolution

International Nuclear Information System (INIS)

Jiang, Jinghui; Zhou, Han; Zhang, Fan; Fan, Tongxiang; Zhang, Di

2016-01-01

Graphical abstract: Core–shell TiO_2 with interior cavity was synthesized by a hydrothermal approach to enhance the photocatalytic performance. - Highlights: • Core–shell TiO_2 with interior cavity can be synthesized by hydrothermal approach. • Multiple reflection of incident light in cavity can increase the absorption. • Rutile can optimize the bandgap and delay the charge recombination. - Abstract: A hydrothermal approach was designed to synthesize core–shell TiO_2 with interior cavity by making sodium dodecyl sulfonate (SDS) as the surfactant and the mixture of water and ethanol as the solvent. The control experiment of solvent reveals ethanol and water are responsible for the formation of sphere and interior cavity, respectively. Besides, SDS can assist the growth of core–shell structure, and the sizes of sphere and interior cavity can be tuned by regulating the reaction time or temperature. UV–vis absorption proves core–shell structure with interior cavity can increase the absorption of incident light to enhance the optical activity of final product. The calculated bandgap and photoluminescence (PL) analyses reveal the coexistence of rutile in final product can optimize the bandgap to 3.03 eV and delay the charge recombination. As a result, an effective photocatalytic hydrogen evolution under full spectrum irradiation can be harvested by the as-synthesized core–shell spheres to reach a quantum yield, approximately 9.57% at 340 nm wavelength.

[The photoluminescence and absorption properties of Co/AAO nano-array composites].

Science.gov (United States)

Li, Shou-Yi; Wang, Cheng-Wei; Li, Yan; Wang, Jian; Ma, Bao-Hong

2008-03-01

Ordered Co/AAO nano-array structures were fabricated by alternating current (AC) electrodeposition method within the cylindrical pores of anodic aluminum oxide (AAO) template prepared in oxalic acid electrolyte. The photoluminescence (PL) emission and photoabsorption of AAO templates and Co/AAO nano-array structures were investigated respectively. The results show that a marked photoluminescence band of AAO membranes occurs in the wavelength range of 350-550 nm and their PL peak position is at 395 nm. And with the increase in the deposition amount of Co nanoparticles, the PL intensity of Co/AAO nano-array structures decreases gradually, and their peak positions of the PL are invariable (395 nm). Meanwhile the absorption edges of Co/AAO show a larger redshift, and the largest shift from the near ultraviolet to the infrared exceeds 380 nm. The above phenomena caused by Co nano-particles in Co/AAO composite were analyzed.

A model for the direct-to-indirect band-gap transition in monolayer ...

Indian Academy of Sciences (India)

Abstract. A monolayer of MoSe2 is found to be a direct band-gap semiconductor. We show, ... In order to determine appropriate basis for the tight-binding model, the Mo and Se ..... RD thanks the Council of Scientific and Industrial Research.

Photoluminescence and optical absorption spectra of {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} mixed crystals

Energy Technology Data Exchange (ETDEWEB)

Kranjcec, M. [Department of Geotechnics, University of Zagreb, 7 Hallerova Aleja, Varazdin, 42000 (Croatia); Ruder Boskovic Institute, 54 Bijenicka Cesta, Zagreb, 10000 (Croatia); Studenyak, I.P. [Uzhhorod National University, 46 Pidhirna Str., Uzhhorod, 88000 (Ukraine); Azhniuk, Yu. M. [Institute of Electron Physics, Ukr. Nat. Acad. Sci., 21 Universytetska Str., Uzhhorod, 88000 (Ukraine)

2005-08-01

Temperature and compositional studies of photoluminescence and optical absorption edge spectra of {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} mixed crystals with x=0.1-0.4 are performed. Exciton and impurity-related photoluminescence bands are revealed at low temperatures and Urbach shape of the absorption edge is observed in the temperature range 77-300 K. Temperature and compositional dependences of the photoluminescence band spectral positions and halfwidths as well as optical pseudogap and absorption edge energy width are investigated. Mechanisms of radiative recombination and optical absorption as well as crystal lattice disordering processes in {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} solid solutions are studied. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical devices based on liquid crystal photonic bandgap fibers

DEFF Research Database (Denmark)

Alkeskjold, Thomas Tanggaard

2005-01-01

the waveguiding mechanism of LC filled PCFs. The principle of tunable fibers based on LCs is thereafter discussed and an alignment and coating study of LC in capillaries is presented. Next, the Liquid Crystal Photonic BandGap (LCPBG) fiber is presented and the waveguiding mechanism is analyzed through plane...... hole. The presence of a LC in the holes of the PCF transforms the fiber from a Total Internal Reflection (TIR) guiding type into a Photonic BandGap (PBG) guiding type, where light is confined to the silica core by coherent scattering from the LC-billed holes. The high dielectric and optical anisotropy...

Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction

Science.gov (United States)

Naseri, Mosayeb; Lin, Shiru; Jalilian, Jaafar; Gu, Jinxing; Chen, Zhongfang

2018-06-01

By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanomaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the electronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and exceptional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

DEFF Research Database (Denmark)

Meyer-Holdt, Jakob

Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

Complete three-dimensional photonic bandgap in a simple cubic structure

International Nuclear Information System (INIS)

Lin, Shawn-Yu; Fleming, J. G.; Lin, Robin; Sigalas, M. M.; Biswas, R.; Ho, K. M.

2001-01-01

The creation of a three-dimensional (3D) photonic crystal with simple cubic (sc) symmetry is important for applications in the signal routing and 3D waveguiding of light. With a simple stacking scheme and advanced silicon processing, a 3D sc structure was constructed from a 6-in. silicon wafer. The sc structure is experimentally shown to have a complete 3D photonic bandgap in the infrared wavelength. The finite size effect is also observed, accounting for a larger absolute photonic bandgap

Pure white-light emitting ultrasmall organic-inorganic hybrid perovskite nanoclusters.

Science.gov (United States)

Teunis, Meghan B; Lawrence, Katie N; Dutta, Poulami; Siegel, Amanda P; Sardar, Rajesh

2016-10-14

Organic-inorganic hybrid perovskites, direct band-gap semiconductors, have shown tremendous promise for optoelectronic device fabrication. We report the first colloidal synthetic approach to prepare ultrasmall (∼1.5 nm diameter), white-light emitting, organic-inorganic hybrid perovskite nanoclusters. The nearly pure white-light emitting ultrasmall nanoclusters were obtained by selectively manipulating the surface chemistry (passivating ligands and surface trap-states) and controlled substitution of halide ions. The nanoclusters displayed a combination of band-edge and broadband photoluminescence properties, covering a major part of the visible region of the solar spectrum with unprecedentedly large quantum yields of ∼12% and photoluminescence lifetime of ∼20 ns. The intrinsic white-light emission of perovskite nanoclusters makes them ideal and low cost hybrid nanomaterials for solid-state lighting applications.

Electronic structure characterization and bandgap engineering of solar hydrogen materials

International Nuclear Information System (INIS)

Guo, Jinghua

2007-01-01

Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe 2 O 3 and ZnO

Photoluminescent properties of single crystal diamond microneedles

Science.gov (United States)

Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

2018-01-01

Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

Bandgap engineering in van der Waals heterostructures of blue phosphorene and MoS{sub 2}: A first principles calculation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.Y. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Si, M.S., E-mail: sims@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Peng, S.L. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, F. [Key Lab of Photovoltaic Materials of Henan Province, Henan University, Kaifeng 475001 (China); Wang, Y.H.; Xue, D.S. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2015-11-15

Blue phosphorene (BP) was theoretically predicted to be thermally stable recently. Considering its similar in-layer hexagonal lattice to MoS{sub 2}, MoS{sub 2} could be an appropriate substrate to grow BP in experiments. In this work, the van der Waals (vdW) heterostructures are constructed by stacking BP on top of MoS{sub 2}. The thermal stability and electronic structures are evaluated based on first principles calculations with vdW-corrected exchange-correlation functional. The formation of the heterostructures is demonstrated to be exothermic and the most stable stacking configuration is confirmed. The heterostructures BP/MoS{sub 2} preserve both the properties of BP and MoS{sub 2} but exhibit relatively narrower bandgaps due to the interlayer coupling effect. The band structures can be further engineered by applying external electric fields. An indirect–direct bandgap transition in bilayer BP/MoS{sub 2} is demonstrated to be controlled by the symmetry property of the built-in electric dipole fields. - Graphical abstract: An indirect-direct band gap transition occurs in van der Waals heterostructure of MoS{sub 2}/BP under external electric fields which is demonstrated to be controlled by the symmetry of the built-in electric dipole fields. - Highlights: • The stacking of heterostructures of BP/MoS{sub 2} is demonstrated to be exothermic. • This suggests that it is possible to grow BP using MoS{sub 2} as the substrate. • The band structures of the heterostructures are exploited. • It realizes an indirect–direct gap transition under external electric fields. • The symmetry of the built-in electric dipole fields controls such gap transition.

Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

DEFF Research Database (Denmark)

Fadil, Ahmed; Iida, Daisuke; Chen, Yuntian

2016-01-01

We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed...

Synthesis and photoluminescence properties of microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors

Energy Technology Data Exchange (ETDEWEB)

Dabre, K.V. [Department of Physics, Arts, Commerce and Science College, Koradi, Nagpur 441111 (India); Park, K. [Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747 (Korea, Republic of); Dhoble, S.J., E-mail: sjdhoble@rediffmail.com [Department of Physics, R.T.M. Nagpur University, Nagpur 440033 (India)

2014-12-25

Graphical abstract: CIE chromaticity coordinate diagram (1931) indicating different colors of Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu (a), Dy (b and c), Sm (d–f) and Pr (g and h)) phosphor under different excitation 466 nm (a), 312 nm (b), 454 nm (c), 313 nm (d), 408 nm (e), 482 nm (f), 315 nm (g) and 450 nm (h). - Highlights: • Microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors were synthesized by solid state method. • Photoluminescence properties of phosphor were investigated. • Color of the phosphor for different excitation has been verified by chromaticity diagram. • The host absorption and energy transfer were investigated. - Abstract: The novel microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors were synthesized by solid-state reaction method at 1250 °C and their photoluminescence properties were investigated. The Eu{sup 3+} and Dy{sup 3+} activated phosphors show intense red (616 nm) and yellow (574 nm) emission respectively; which indicate that the rare earth ions are substituted at non-centrosymmetric site in the host lattice. Near white (Dy{sup 3+}) and reddish-orange (Sm{sup 3+}) emissions of rare earth ions in the host lattice show strong host absorption and energy transfer from the host to activator ion. Pr{sup 3+} activated phosphor shows a series of emission peaks in the visible region with the most intense peak in the blue region at 491 and 499 nm.

Effect of ion indium implantation on InP photoluminescence spectra

International Nuclear Information System (INIS)

Pyshnaya, N.B.; Radautsan, S.I.; Tiginyanu, I.M.; Ursaki, V.V.

1988-01-01

Photoluminescence spectra of indium phosphide single crystals implanted by indium after annealing under the protective Al 2 O 3 film in a nitrogen flow are investigated. As a result of implantation and annealing in photoluminescence spectra of crystals there appeared a new band with the maximum at 1.305 eV (T=6 K) which is connected with the free electron transition at the level of the antistructure defect of In p - lying by 0.115 eV above the valent zone ceiling. With large doses of the implanted indium in the photoluminescence spectrum a long-wave band with the maximum at 0.98-0.99 eV is also observed caused, apparently, by the strong lattice disorder

Efficient low bandgap polymer solar cell with ordered heterojunction defined by nanoimprint lithography.

Science.gov (United States)

Yang, Yi; Mielczarek, Kamil; Zakhidov, Anvar; Hu, Walter

2014-11-12

In this work, we demonstrate the feasibility of using nanoimprint lithography (NIL) to make efficient low bandgap polymer solar cells with well-ordered heterojunction. High quality low bandgap conjugated polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) nanogratings are fabricated using this technique for the first time. The geometry effect of PCPDTBT nanostructures on the solar cell performance is investigated by making PCPDTBT/C70 solar cells with different feature sizes of PCPDTBT nanogratings. It is found that the power conversion efficiency (PCE) increases with increasing nanograting height, PCPDTBT/C70 junction area, and decreasing nanograting width. We also find that NIL makes PCPDTBT chains interact more strongly and form an improved structural ordering. Solar cells made on the highest aspect ratio PCPDTBT nanostructures are among the best reported devices using the same material with a PCE of 5.5%.

Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy

International Nuclear Information System (INIS)

De Angelis, Roberta; Casalboni, Mauro; De Matteis, Fabio; Hatami, Fariba; Masselink, William T.; Zhang, Hong; Prosposito, Paolo

2015-01-01

InP/InGaP surface quantum dots represent an attractive material for optical chemical sensors since they show a remarkable near infra-red emission at room temperature, whose intensity increases rapidly and reversibly depending on the composition of the environmental atmosphere. We show here their emission properties by time resolved photoluminescence spectroscopy investigation. Photoluminescence transients with and without chemical solvent vapours (methanol, clorophorm, acetone and water) were fitted with a 3-exponential decay law with times of about 0.5 ns, 2 ns and 7 ns. The measurements revealed a weak effect on clorophorm, acetone and water, while the initial decay time of InP surface quantum dots increases (up to 15%) upon methanol vapour exposure, indicating that the organic molecules efficiently saturate QD non-radiative surface states. - Highlights: • InP SQDs emission depends on the presence of solvent vapours in the atmosphere. • TR photoluminescence transients were fitted with a 3-exponential decay law. • The initial decay time increases (up to 15%) upon methanol vapour exposure. • Organic molecules efficiently saturate QD non-radiative surface states.

Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study

KAUST Repository

Xiao, Zhen-Yu; Li, Yong-Feng; Yao, Bin; Deng, Rui; Ding, Zhan-Hui; Wu, Tao; Yang, Gang; Li, Chun-Ran; Dong, Zi-Yuan; Liu, Lei; Zhang, Li-Gong; Zhao, Hai-Feng

2013-01-01

We report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption

Compact electrically controlled broadband liquid crystal photonic bandgap fiber polarizer

DEFF Research Database (Denmark)

Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

2009-01-01

An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm.......An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm....

Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO{sub 2}:Er doped with Si-nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Wojdak, M., E-mail: m.wojdak@ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Jayatilleka, H. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario, Canada M5S 3G4 (Canada); Shah, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Kenyon, A.J., E-mail: t.kenyon@ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Gourbilleau, F.; Rizk, R. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Université de Caen, 14050 CAEN cedex (France)

2013-04-15

During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO{sub 2}:Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate. -- Highlights: ► We studied photoluminescence of Er in SiO{sub 2} thin films doped with Si nanoclusters. ► Presence of ITO layer on the top enhances photoluminescence decay rate of Er. ► The effect depends on the thickness of active film. ► Radiative rate change in proximity of ITO layer was calculated theoretically. ► The calculation results are compared with the experiment and discussed.

NIR emitting K2SrCl4:Eu2+, Nd3+ phosphor as a spectral converter for CIGS solar cell

Science.gov (United States)

Tawalare, P. K.; Bhatkar, V. B.; Omanwar, S. K.; Moharil, S. V.

2018-05-01

Intense near-infrared emitting phosphor K2SrCl4:Eu2+,Nd3+ with various concentrations of Nd3+ were synthesized. These are characterized with X-ray diffraction, reflectance, photoluminescence emission and photoluminescence excitation spectroscopy, PL lifetime measurements. The emission can be excited by a broad band in near ultra violet region as a consequence of Eu2+→Nd3+ energy transfer. The efficiency of Eu2+→Nd3+ energy transfer is as high as 95%. Fluorescence decay curves for Eu2+ doped samples are almost exponential and described by τ = 500 ns. Eu2+ lifetimes are shortened after Nd3+ doping. Near infrared Emission intensity is limited by Nd3+→Nd3+ energy transfer and the consequent concentration quenching. Nd3+ emission matches well with the spectral response of CIGS and CIS solar cells. Absorption of near ultra violet radiations followed by conversion to near infrared indicates the potential application in solar photovoltaics.

Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe 2 by Hydrohalic Acid Treatment

KAUST Repository

Han, Hau-Vei

2015-12-30

Atomically thin two-dimensional transition-metal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-to-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.

Plasmon-modulated photoluminescence from gold nanostructures and its dependence on plasmon resonance, excitation energy, and band structure

NARCIS (Netherlands)

Le Thi Ngoc, Loan; Wiedemair, Justyna; van den Berg, Albert; Carlen, Edwin

2015-01-01

Two distinct single-photon plasmon-modulated photoluminescence processes are generated from nanostructured gold surfaces by tuning the spectral overlap of the incident laser source, localized surface plasmon resonance band, and the interband transitions between the d and sp bands, near the X-and

On the origin of fine structure in the photoluminescence spectra of the β-sialon:Eu2+ green phosphor

Directory of Open Access Journals (Sweden)

Kohsei Takahashi, Ken-ichi Yoshimura, Masamichi Harada, Yoshitaka Tomomura, Takashi Takeda, Rong-Jun Xie and Naoto Hirosaki

2012-01-01

Full Text Available The photoluminescence (PL and PL excitation (PLE spectra of Si6−zAlzOzN8−z (β-sialon:Eu2+ phosphors with small z values (z=0.025–0.24 were studied at room temperature and 6 K. The PL and PLE spectra exhibit fine structure with the PL lines being as sharp as 45–55 nm even at room temperature; this fine structure was enhanced by decreasing the z value. These results can be used for expanding the color gamut of liquid crystal displays, particularly in the blue–green region. From low-temperature measurements, the fine PLE structure was ascribed to discrete energy levels of 7FJ states. The 4f65d excited states of Eu2+ are considered to be localized near the 4f orbital. This is because the bonding of Eu2+ with surrounding atoms is ionic rather than covalent. Lattice phonon absorptions were also observed in the PLE spectrum, revealing that the optically active Eu2+ ions are located in the β-sialon crystal. The PL spectrum of the sample with the smallest z value (0.025 consists of a sharp zero-phonon line and lattice phonon replicas, which results in a sharp and asymmetric spectral shape.

Synthesis and characterization of polymorphs of photoluminescent Eu(III)-(2,5-furandicarboxylic acid, oxalic acid) MOFs

International Nuclear Information System (INIS)

Shi, Fa-Nian; Ananias, Duarte; Yang, Ting-Hai; Rocha, João

2013-01-01

A novel metal organic framework (MOF) formulated as [Eu(H 2 O) 2 (fdc)(ox) 0.5 ·(H 2 O)] n (1, fdc 2− =2,5-furandicarboxylate, ox 2− =oxalate), was hydrothermally synthesized via in situ ox 2− generation from the partial decomposition of the fdc 2− ligand. This material crystallizes in the monoclinic space group C2/c, unit cell parameters of 1: a=16.7570(10), b=10.5708(7), c=13.5348(14) Å, β=116.917(2)° (Z=8), and exhibits a three-dimensional (3D)-porous framework, with guest water molecules residing in the channel linking all other ligands (H 2 O, ox 2− and fdc 2− ) via hydrogen bonding interactions. Compound 2 is a polymorph of 1 crystallizing in monoclinic P21/c space group. The photoluminescence properties of 1 and 2 were studied at room temperature. The spectra show the typical Eu 3+ red emission and the differences observed reflects the slightly different structures of these polymorphs. - Graphical abstract: Exploring metal organic framework polymorphism in the system Eu(H 2 O) 2 (fdc)(ox) 0.5 ·(H 2 O)] n (fdc 2− =2,5-furandicarboxylate, ox 2− =oxalate) for tuning light emission. Display Omitted - Highlights: • Synthesis of Eu(III)-(2,5-furandicarboxylic acid, oxalic acid) MOF polymorphs. • Detailed single-crystal study of polymorphs including hydrogen-bonding networks. • Photoluminescence spectroscopy show subtle differences light emission properties

Study on the fabrication and photoluminescence characteristics of LiBO2 glass scintillators with the lanthanides activators

International Nuclear Information System (INIS)

Sin, S. W.; Hwang, J. H.; Choi, S. H.; Sumarokov, S. Yu.

2002-01-01

LiBO 2 glass scintillators were fabricated, and lanthanides(except Pm) oxides or chlorides were used as an activator. For the fabrication of LiBO 2 glasses, optimum heating conditions were obtained, and the photoluminescence of the glasses was measured by the monochromator. For the best transparency of the glass samples, optimum heating temperature and time are 1000 .deg. C and 40 min, respectively. The result of photoluminescence analysis shows that Pr, Nd, Gd, Ho, Er, Tm, Yb, and Lu are not good as activator. Because emission spectrum of samples with them was equal to that of sample without activator. In the case of samples with Europium, the peak of emission spectrum of Eu(III) is 810 nm. And Samples with Ce(III) are 760 nm, and Tb(III) are about 535 nm. Samples with Ce(III) and Tb(III) have the best PL intensity with added sugar in Ar reduction atmosphere, and sample with Eu(III) has the best intensity without a reducing process

A Polarization Maintaining Filter based on a Liquid-Crystal-Photonic-Bandgap-Fiber

DEFF Research Database (Denmark)

Scolari, Lara; Olausson, Christina Bjarnal Thulin; Turchinovich, Dmitry

2008-01-01

A polarization maintaining filter based on a liquid-crystal-photonic-bandgap-fiber is demonstrated. Its polarization extinction ratio is 14 dB at 1550 nm. Its tunability is 150 nm.......A polarization maintaining filter based on a liquid-crystal-photonic-bandgap-fiber is demonstrated. Its polarization extinction ratio is 14 dB at 1550 nm. Its tunability is 150 nm....

Solar-light photocatalytic disinfection using crystalline/amorphous low energy bandgap reduced TiO2

Science.gov (United States)

Kim, Youngmin; Hwang, Hee Min; Wang, Luyang; Kim, Ikjoon; Yoon, Yeoheung; Lee, Hyoyoung

2016-01-01

A generation of reactive oxygen species (ROS) from TiO2 under solar light has been long sought since the ROS can disinfect organic pollutants. We found that newly developed crystalline/amorphous reduced TiO2 (rTiO2) that has low energy bandgap can effectively generate ROS under solar light and successfully remove a bloom of algae. The preparation of rTiO2 is a one-pot and mass productive solution-process reduction using lithium-ethylene diamine (Li-EDA) at room temperature. Interestingly only the rutile phase of TiO2 crystal was reduced, while the anatase phase even in case of both anatase/rutile phased TiO2 was not reduced. Only reduced TiO2 materials can generate ROS under solar light, which was confirmed by electron spin resonance. Among the three different types of Li-EDA treated TiO2 (anatase, rutile and both phased TiO2), the both phased rTiO2 showed the best performance to produce ROS. The generated ROS effectively removed the common green algae Chlamydomonas. This is the first report on algae degradation under solar light, proving the feasibility of commercially available products for disinfection. PMID:27121120

Photoluminescence decay dynamics in γ-Ga2O3 nanocrystals: The role of exclusion distance at short time scales

Science.gov (United States)

Fernandes, Brian; Hegde, Manu; Stanish, Paul C.; Mišković, Zoran L.; Radovanovic, Pavle V.

2017-09-01

We developed a comprehensive theoretical model describing the photoluminescence decay dynamics at short and long time scales based on the donor-acceptor defect interactions in γ-Ga2O3 nanocrystals, and quantitatively determined the importance of exclusion distance and spatial distribution of defects. We allowed for donors and acceptors to be adjacent to each other or separated by different exclusion distances. The optimal exclusion distance was found to be comparable to the donor Bohr radius and have a strong effect on the photoluminescence decay curve at short times. The importance of the exclusion distance at short time scales was confirmed by Monte Carlo simulations.

Optimal design of tunable phononic bandgap plates under equibiaxial stretch

International Nuclear Information System (INIS)

Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M S; Guest, James K

2016-01-01

Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite

Microwave Assisted Synthesis and Photoluminescence Properties of ...

Indian Academy of Sciences (India)

46

earth doping of ZnS would not lead to sufficiently bright PL materials. As a result, several new ... photoluminescence characteristics of ZnS nanoparticles doped with Pb2+. New luminescent ..... Papers, San Francisco, CA, USA, 249. [6] Tanaka ...

Photoluminescence characterization of Dy3+ and Eu2+ ion in M5(PO4)3F (M = Ba, Sr, Ca) phosphors

International Nuclear Information System (INIS)

Nagpure, I.M.; Shinde, K.N.; Dhoble, S.J.; Kumar, Animesh

2009-01-01

Photoluminescence investigation of Eu and Dy activated phosphate based phosphors prepared by combustion synthesis, characterized by XRD (X-ray diffraction) and photoluminescence techniques, has been reported. PL excitation spectrum of M 5 (PO 4 ) 3 F:Dy phosphors shows the excitation peaks ranging from 300 to 400 nm due to 4f → 4f transitions of Dy 3+ ions. PL emission spectrum of Dy 3+ ion under 348 nm excitation gives PL emission at 482 nm (blue) due to 4 F 9/2 → 6 H 15/2 transitions, 574 nm (yellow) emission due to 4 F 9/2 → 6 H 13/2 transitions and 670 nm (red) due to 4 F 9/2 → 6 H 11/2 transitions, gives BYR (blue-yellow-red) emissions. The Eu 2+ broad band PL emission spectrum was observed in M 5 (PO 4 ) 3 F:Eu phosphor at 440 nm in the blue region of the spectrum due to 5d → 4f transition at 352 nm excitation. The 300-400 nm is Hg-free excitation (Hg excitation is 85% 254 nm wavelength of light and 15% other wavelengths), which is characteristic of solid-state lighting phosphors. Hence PL emission in divalent europium and trivalent dysprosium may be efficient photoluminescent materials for solid-state lighting phosphors.

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.

Science.gov (United States)

Zhang, Qiang; Chen, Yuxuan; Zhang, Chendong; Pan, Chi-Ruei; Chou, Mei-Yin; Zeng, Changgan; Shih, Chih-Kang

2016-12-14

The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials relaxes the requirement of lattice matching, therefore enabling great design flexibility to tailor novel 2D electronic systems. Here we report the successful growth of MoSe 2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using molecular beam epitaxy. Using scanning tunnelling microscopy and spectroscopy, we found that the quasi-particle bandgap of MoSe 2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru, which causes residual metallic screening from the substrate. In addition, the electronic structure and the work function of MoSe 2 are modulated electrostatically with an amplitude of ∼0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

Photoluminescence of ultra-high molecular weight polyethylene modified by fast atom bombardment

International Nuclear Information System (INIS)

Toth, S.; Fuele, M.; Veres, M.; Pocsik, I.; Koos, M.; Toth, A.; Ujvari, T.; Bertoti, I.

2006-01-01

An increase in the application potential of the ultra-high molecular weight polyethylene (UHMWPE) may be achieved by producing a hard, wear resistant carbonaceous modified surface layer on it. In this study the surface of UHMWPE samples was treated by 1 keV N, H and He fast atom bombardment (FAB) to obtain amorphous carbon surface layer which produces an enhancement of microhardness. The untreated and FAB-modified samples were investigated by photoluminescence, infrared, Raman and optical absorption spectroscopy. The FAB-treatment caused a nearly complete disappearance of the characteristic luminescence bands of UHMWPE (at 335, 351, 363 and 381 nm), the appearance of new bands at 459 and 495 nm due to the formation of new recombination levels in the FAB-treated samples. The remarkable decrease in integrated luminescence intensity indicates the appearance of new non-radiative recombination levels caused by FAB treatment. Structural modifications in FAB treated samples result in the development of structural arrangement containing sp 2 bonded carbon sites in rings or chains of different sizes and the electronic levels corresponding to these structural elements are situated in the forbidden gap in the electronic density of states which brings forth the observed changes of the photoluminescence properties

Remarkable changes in the photoluminescent properties of Y2Ce2O7:Eu(3+) red phosphors through modification of the cerium oxidation states and oxygen vacancy ordering.

Science.gov (United States)

Raj, Athira K V; Prabhakar Rao, P; Sreena, T S; Sameera, S; James, Vineetha; Renju, U A

2014-11-21

A new series of red phosphors based on Eu(3+)-doped yttrium cerate [Y1.9Ce2O7:0.1Eu(3+), Y2Ce1.9O7:0.1Eu(3+) and Y2Ce2-xO7:xEu(3+) (x = 0.05, 0.10, 0.15, 0.20, 0.25 and 0.50)] was prepared via a conventional solid-state method. The influence of the substitution of Eu(3+) at the aliovalent site on the photoluminescent properties was determined by powder X-ray diffraction, FT Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, scanning electron microscopy with energy-dispersive spectroscopy, UV-visible absorption spectroscopy, photoluminescence spectroscopy and lifetime measurements. The substitution of Eu(3+) at the Ce(4+) site induces a structural transition from a defect fluorite to a C-type structure, which increases the oxygen vacancy ordering and the distortion of the Eu(3+) environment, and decreases the formation of Ce(3+) states. In contrast, phosphors with isovalent substitution at the Y(3+) site exhibit the biphasic nature of defect fluorite and a C-type structure, thereby increasing the number of Ce(3+) oxidation states. These modifications resulted in remarkable changes in the photoluminescent properties of Y2Ce1.9O7:0.1Eu(3+) red phosphors, with emission intensities 3.8 times greater than those of the Ce0.9O2:0.1Eu(3+) and Y1.9Ce2O7:0.1Eu(3+). The photoluminescent properties of Y2Ce2-xO7:xEu(3+) were studied at different Eu(3+) concentrations under excitation with blue light. These phosphors emit intense red light due to the (5)D0-(7)F2 transition under excitation at 466 nm and no concentration quenching is observed with up to 50 mol% Eu(3+). They show increased lifetimes in the range 0.62-0.72 ms at Eu(3+) concentrations. The cation ordering linked to the oxygen vacancy ordering led to the uniform distribution of Eu(3+) ions in the lattice, thus allowing higher doping concentrations without quenching and consequently increasing the lifetime of the (5)D0 states. Our results demonstrate that significant improvements in

Passive band-gap reconfiguration born from bifurcation asymmetry.

Science.gov (United States)

Bernard, Brian P; Mann, Brian P

2013-11-01

Current periodic structures are constrained to have fixed energy transmission behavior unless active control or component replacement is used to alter their wave propagation characteristics. The introduction of nonlinearity to generate multiple stable equilibria is an alternative strategy for realizing distinct energy propagation behaviors. We investigate the creation of a reconfigurable band-gap system by implementing passive switching between multiple stable states of equilibrium, to alter the level of energy attenuation in response to environmental stimuli. The ability to avoid potentially catastrophic loads is demonstrated by tailoring the bandpass and band-gap regions to coalesce for two stable equilibria and varying an external load parameter to trigger a bifurcation. The proposed phenomenon could be utilized in remote or autonomous applications where component modifications and active control are impractical.

Tuning the hybridization bandgap by meta-molecules with in-unit interaction

Energy Technology Data Exchange (ETDEWEB)

Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong [Key Laboratory of Advanced Micro-Structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-09-07

In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interaction into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Investigation on photoluminescence, electrical and positron lifetime of Eu"3"+ activated Gd_2O_3 phosphors

International Nuclear Information System (INIS)

Selvalakshmi, Thangaraj; Sellaiyan, Selvakumar; Uedono, Akira; Chandra Bose, Arumugam

2015-01-01

In the present study, red emitting Gd_2O_3:Eu"3"+ phosphors are prepared by citrate-based sol–gel process and the as-prepared samples are annealed at various annealing temperatures. The photoluminescence properties of Gd_2O_3:Eu"3"+ is explained from the excitation and emission spectra. The excitation spectra include peaks corresponding to charge transfer and 4f–4f transitions of Eu"3"+ and Gd"3"+. The phosphors exhibit a weak energy transfer process from Gd"3"+ to Eu"3"+. Under the excitation of 254 nm, a sharp red emission peak is observed at 611 nm and the emission intensity increases with the annealing temperature. The presence of defects in the phosphor is investigated by positron annihilation lifetime and Doppler broadening spectroscopy. The relation between visible emission and lattice defects of the phosphors is presented. The electrical and dielectric properties of the phosphor are also discussed in detail. Such red emitting phosphors pave the way towards the fabrication of light emitting diodes (LEDs). - Highlights: • Positron annihilation lifetime spectroscopy of Gd_2O_3:Eu"3"+. • Relation between positron lifetime and photoluminescence. • Conductivity and dielectric properties of Gd_2O_3:Eu"3"+.

Electronic structures and Eu{sup 3+} photoluminescence behaviors in Y{sub 2}Si{sub 2}O{sub 7} and La{sub 2}Si{sub 2}O{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Zhang Zhiya, E-mail: zhangzhiya@lzu.edu.cn [Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000 (China); Wang Yuhua [Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000 (China); Zhang Feng [Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000 (China); Cao Haining [Computational Science Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of)

2011-04-14

Research highlights: > Host excitation near the band gap of Y{sub 2}Si{sub 2}O{sub 7} and La{sub 2}Si{sub 2}O{sub 7} is analyzed. > The calculated result well explains Eu{sup 3+} PL behaviors in Y{sub 2}Si{sub 2}O{sub 7} and La{sub 2}Si{sub 2}O{sub 7}. > The electronic structure and Eu{sup 3+} VUV PL in La{sub 2}Si{sub 2}O{sub 7} are first estimated. - Abstract: The electronic structures and linear optical properties of Y{sub 2}Si{sub 2}O{sub 7} (YSO) and La{sub 2}Si{sub 2}O{sub 7} (LSO) are calculated by LDA method based on the theory of DFT. Both YSO and LSO are direct-gap materials with the direct band gap of 5.89 and 6.06 eV, respectively. The calculated total and partial density of states indicate that in both YSO and LSO the valence band (VB) is mainly constructed from O 2p and the conduction band (CB) is mostly formed from Y 4d or La 5d. Both the calculated VB and CB of YSO exhibit relatively wider dispersion than that of LSO. In addition, the CB of YSO presents more electronic states. Meanwhile, the VB of LSO shows narrower energy distribution with higher electronic states density. The theoretical absorption of YSO shows larger bandwidth and higher intensity than that of LSO. The results are compared with the experimental host excitations and impurity photoluminescence in Eu{sup 3+}-doped YSO and LSO.

Ba2ZnWO6:Sm3+ as promising orange-red emitting phosphors: Photoluminescence properties and energy transfer process

Science.gov (United States)

Chen, Peng; Hu, Wenyuan; Yang, Dingming; Zhu, Jiayi; Zhang, Jing; Wu, Yadong

2018-02-01

Novel orange-red emitting phosphors, Ba2Zn1-xWO6:xSm3+ (x = 0.03, 0.04, 0.05, 0.06 and 0.07) (BZW:Sm3+), were prepared using a high-temperature solid-state reaction method. Their crystal structure and photoluminescence properties were characterized and the mechanism of energy transfers between Ba2ZnWO6 and Sm3+ elucidated in detail. It was found that the phosphors had a cubic structure with space group Fm 3 bar m . They can be excited by near-ultraviolet light, and the characteristic emissions of Sm3+ ions are observed at 564 nm, 598 nm and 645 nm, corresponding to 4G5/2 → 6H5/2, 4G5/2 → 6H7/2 and 4G5/2 → 6H9/2 transitions, respectively. The 4G5/2 → 6H9/2 transitions shows the greatest intensity, which indicates that Sm3+ ions occupy the noncentrosymmetric sites. The optimal doping concentration of Sm3+ ions in Ba2ZnWO6 is about 5 mol% and the phenomenon of concentration quenching occurs when the content of Sm3+ ions exceeds 5 mol%. All results show that the Ba2ZnWO6:Sm3+ phosphor holds great promise for use in high-quality white light-emitting diodes.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal

Science.gov (United States)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal.

Science.gov (United States)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Structural and spectral properties of MgZnO2:Sm3+ phosphor

Science.gov (United States)

Rajput, Preasha; Sharma, Pallavi; Biswas, Pankaj; Kamni

2018-05-01

The samarium doped MgZnO2 phosphor was synthesized by the low-cost combustion method. The powder X-ray diffraction (XRD) analysis confirmed the crystallinity and phase purity of the phosphor. The lattice parameters were determined by indexing the diffraction peaks. The photoluminescence (PL) study revealed that the phosphor exhibited a broad excitation band in the UV region ranging between 200 to 350 nm. The 601 nm emission was ascribed to 4G5/2 to 6H7/2 transitions of the Sm3+ ion. The optical bandgap of MgZnO2:Sm3+ was obtained to be 3.56 eV. The phosphor can be projected as a useful material in X- and gamma-ray scintillators.

Space-coiling fractal metamaterial with multi-bandgaps on subwavelength scale

Science.gov (United States)

Man, Xianfeng; Liu, Tingting; Xia, Baizhan; Luo, Zhen; Xie, Longxiang; Liu, Jian

2018-06-01

Acoustic metamaterials are remarkably different from conventional materials, as they can flexibly manipulate and control the propagation of sound waves. Unlike the locally resonant metamaterials introduced in earlier studies, we designed an ultraslow artificial structure with a sound speed much lower than that in air. In this paper, the space-coiling approach is proposed for achieving artificial metamaterial for extremely low-frequency airborne sound. In addition, the self-similar fractal technique is utilized for designing space-coiling Mie-resonance-based metamaterials (MRMMs) to obtain a band-dispersive spectrum. The band structures of two-dimensional (2D) acoustic metamaterials with different fractal levels are illustrated using the finite element method. The low-frequency bandgap can easily be formed, and multi-bandgap properties are observed in high-level fractals. Furthermore, the designed MRMMs with higher order fractal space coiling shows a good robustness against irregular arrangement. Besides, the proposed artificial structure was found to modify and control the radiation field arbitrarily. Thus, this work provides useful guidelines for the design of acoustic filtering devices and acoustic wavefront shaping applications on the subwavelength scale.

Characteristics and performance of the Sunna high dose dosemeter using green photoluminescence and UV absorption readout methods

Energy Technology Data Exchange (ETDEWEB)

Miller, S.D.; Murphy, M.K.; Tinker, M.R.; Kovacs, A.; McLaughlin, W

2002-07-01

Growth in the use of ionising radiation for medical sterilisation and the potential for wide-scale international food irradiation have created the need for robust, mass-producible, inexpensive, and highly accurate radiation dosemeters. The Sunna dosemeter, lithium fluoride injection-moulded in a polyethylene matrix, can be read out using either green photoluminescence or ultraviolet (UV) absorption. The Sunna dosemeter can be mass-produced inexpensively with high precision. Both the photoluminescent and the UV absorption reader are simple and inexpensive. Both methods of analysis display negligible humidity effects, minimal dose rate dependence, acceptable post-irradiation effects, and permit measurements with a precision of nearly 1% 1s. The UV method shows negligible irradiation temperature effects from -30 deg. C to +60 deg. C. The photoluminescence method shows negligible irradiation temperature effects above room temperature for sterilisation dose levels and above. The dosimetry characteristics of these two readout methods are presented along with performance data in commercial sterilisation facilities. (author)

Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

Science.gov (United States)

Liu, Yu-Hsin

This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

International Nuclear Information System (INIS)

Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

2012-01-01

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

Journal of Chemical Sciences | Indian Academy of Sciences

Indian Academy of Sciences (India)

Improved electrochemical performance of Ag-modified Li4Ti5O12 anode material in a broad .... Effects of acid concentration on intramolecular charge transfer reaction of ... colour, with bandgap energy of around 2.2 eV at 0.1 mol% Fe doping. ... Synthesis, characterization and photoluminescence properties of graphene ...

Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

2013-01-01

Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

Stability and bandgaps of layered perovskites for one- and two-photon water splitting

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; García Lastra, Juan Maria; Hüser, Falco

2013-01-01

in the Ruddlesden–Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon...... as photo-cathode. In addition, we explore a simple rule relating the bandgap of the perovskite to the number of octahedra in the layered structure and the B-metal ion. Finally, the quality of the GLLB-SC potential used to obtain the bandgaps, including the derivative discontinuity, is validated against G0W......0@LDA gaps for 20 previously identified oxides and oxynitrides in the cubic perovskite structure....

Defect-Induced Photoluminescence Enhancement and Corresponding Transport Degradation in Individual Suspended Carbon Nanotubes

Science.gov (United States)

Wang, Bo; Shen, Lang; Yang, Sisi; Chen, Jihan; Echternach, Juliana; Dhall, Rohan; Kang, DaeJin; Cronin, Stephen

2018-05-01

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. The utilization of defects in carbon nanotubes to improve their photoluminescence efficiency has become a widespread study of the realization of efficient light-emitting devices. Here, we report a detailed comparison of the defects in nanotubes (quantified by Raman spectroscopy) and photoluminescence (PL) intensity of individual suspended carbon nanotubes (CNTs). We also evaluate the impact of these defects on the electron or hole transport in the nanotubes, which is crucial for the ultimate realization of optoelectronic devices. We find that brightly luminescent nanotubes exhibit a pronounced D-band in their Raman spectra, and vice versa, dimly luminescent nanotubes exhibit almost no D-band. Here, defects are advantageous for light emission by trapping excitons, which extend their lifetimes. We quantify this behavior by plotting the PL intensity as a function of the ID /IG -band Raman intensity ratio, which exhibits a Lorentzian distribution peaked at ID /IG=0.17 . For CNTs with a ID /IG ratio >0.25 , the PL intensity decreases, indicating that above some critical density, nonradiative recombination at defect sites dominates over the advantages of exciton trapping. In an attempt to fabricate optoelectronic devices based on these brightly luminescent CNTs, we transfer these suspended CNTs to platinum electrodes and find that the brightly photoluminescent nanotubes exhibit nearly infinite resistance due to these defects, while those without bright photoluminescence exhibit finite resistance. These findings indicate a potential limitation in the use of brightly luminescent CNTs for optoelectronic applications.

Association Between Coronary Artery Calcification and the Hemoglobin Glycation Index: The Kangbuk Samsung Health Study.

Science.gov (United States)

Rhee, Eun-Jung; Cho, Jung-Hwan; Kwon, Hyemi; Park, Se Eun; Park, Cheol-Young; Oh, Ki-Won; Park, Sung-Woo; Lee, Won-Young

2017-12-01

The hemoglobin glycation index (HGI) is known to be correlated with the risk for cardiovascular disease. To analyze the association between incident coronary artery calcification (CAC) and the changes in HGI among participants without diabetes, over 4 years. A retrospective study of 2052 nondiabetic participants in whom the coronary artery calcium score was measured repeatedly over 4 years, as part of a health checkup program in Kangbuk Samsung Hospital in Korea, and who had no CAC at baseline. The HGI was defined as the difference between the measured and predicted hemoglobin A1c (HbA1c) levels. A total of 201 participants developed CAC after 4 years, and the mean baseline HGI was significantly higher in those patients. The incidence of CAC gradually increased from the first to the fourth quartile groups of baseline HGI. The odds ratio (OR) for incident CAC was the highest among the four groups divided by the quartiles of the baseline HGI and was significant after adjustment for confounding variables (vs first quartile group: OR, 1.632; 95% confidence interval, 1.024 to 2.601). The incidence of and risk for CAC development were significantly higher than in other groups compared with the low-to-low group after adjustment for confounding factors; however, when baseline HbA1c level was included in the model, only participants with a low-to-high HGI over 4 years showed a significantly increased OR for CAC development compared with the low-to-low group (OR, 1.722; 95% confidence interval, 1.046 to 2.833). The participants with a high baseline HGI and consistently high HGI showed a higher risk for incident CAC than those with a low baseline HGI. An increased HGI over 4 years significantly increased the risk for CAC regardless of the baseline HbA1c levels. Copyright © 2017 Endocrine Society

Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

KAUST Repository

Matsuki, Keiichiro; Pu, Jiang; Kozawa, Daichi; Matsuda, Kazunari; Li, Lain-Jong; Takenobu, Taishi

2016-01-01

We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

KAUST Repository

Matsuki, Keiichiro

2016-05-24

We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.