WorldWideScience

Sample records for hgcdte cdte pbsnte

  1. RF magnetron sputtering deposition of CdTe passivation on HgCdTe

    Science.gov (United States)

    Rutkowski, Jaroslaw; Adamiec, Krzysztof; Rogalski, Antoni

    1998-04-01

    In this study, we report the RF magnetron sputtering growth and characterization of CdTe passivant on bulk n-type HgCdTe. Our investigations include the HgCdTe surface preparation and in-situ pretreatment, deposition-induced surface damage, interface charge, CdTe film stoichiometry, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The heterostructures are also characterized by reflectance measurement. In order to investigate the passivation properties of CdTe/HgCdTe heterostructures, we have modeled the band diagram of abrupt CdTe/HgCdTe heterojunction. The effect of sputtering growth condition parameters is also reported. The sputtering CdTe layers, exhibit excellent dielectric, insulating and mechano- chemical properties, as well as interface properties. The interfaces are characterized by slight accumulation and a small hysteresis. A carefully controlled growth process and surface pretreatment tailored to the specific material are required in order to obtain near flat band conditions on n- type materials. Additional informations on surface limitations are obtained from analyzing the I-V characteristics of photodiodes with metal gates covering the p-n junction surface location.

  2. Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)

    Science.gov (United States)

    Sporken, R.; Lange, M. D.; Faurie, Jean-Pierre

    1991-09-01

    The current status of molecular beam epitaxy (MBE) of CdTe and HgCdTe on Si(100) is reviewed. CdTe and HgCdTe grow in the (111)B orientation on Si(100); monocrystalline films with two domains are obtained on most nominal Si(100) substrates, single domain films are grown on misoriented substrates and on nominal Si(100) preheated to 900-950 degree(s)C. Double-crystal x-ray rocking curves (DCRCs) with full-width at half-maximum (FWHM) as low as 110 arcsec are reported for HgCdTe on silicon; these layers are n-type, and electron mobilities higher than 5 X 104 cm2V-2s-1 are measured at 23 K for x equals 0.26. Excellent thickness and composition uniformity is obtained: standard deviation of the CdTe thickness 0.4% of the average thickness on 2-in. and 2.3% on 5-in., standard deviation of the Cd concentration in the HgCdTe layers 0.6% of the average concentration on 3-in. and 2.4% on 5-in. First results regarding growth of CdTe on patterned Si substrates are also reported.

  3. The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer%分子束外延HgCdTe薄膜的CdTe缓冲层特性研究

    Institute of Scientific and Technical Information of China (English)

    宋立媛; 唐利斌; 李艳辉; 孔令德; 陈雪梅

    2009-01-01

    CdTe是GaAs衬底上分子束外延(MBE)HgCdTe薄膜时的缓冲层,引入缓冲层的目的是减小失配位错,CdTe缓冲层的生长直接影响到后续HgCdTe薄膜的制备质量,然而目前现有文献鲜有报道CdTe缓冲层的最佳厚度.采用X射线双晶衍射、位错腐蚀坑密度(EPD)、FT-IR和椭圆偏振光谱的方法,从CdTe缓冲层厚度对位错密度的影响入手,分析并确定了理想的CdTe缓冲层厚度.%CdTe is the buffer layer of GaAs substrate for HgCdTe eoilayer grown by MBE,The purpose for introduction of buffer laver is to decrease the mismatched dislocation,the growth of CdTe buffer layer directly affects the quality of foilowing grown HgCdTe thin film.However,up to now only few papers have reported the optimum thickness for CdTe buffer layer.By using of X-ray double ervstal diffraction,EPD,FT-IR as well as soectroscopic ellipsometry the paper has studied the effects of the thickness on EPD for CdTe buffer layer,the optimum thickness of CdTe buffer layer has been obtained.

  4. 640 X 480 Pace HgCdTe FPA

    Science.gov (United States)

    Kozlowski, Lester J.; Bailey, Robert B.; Cabelli, Scott A.; Cooper, Donald E.; McComas, Gail D.; Vural, Kadri; Tennant, William E.

    1992-12-01

    A hybrid HgCdTe 640 X 480 infrared (IR) focal plane array (FPA) that meets the sensitivity, resolution, and field-of-view requirements of high-performance medium wavelength infrared (MWIR) imaging systems has been developed. The key technology making this large, high sensitivity device producible is the epitaxial growth of HgCdTe on a CdTe-buffered, sapphire substrate (referred to as PACE, for Producible Alternative to CdTe for Epitaxy; PACE-I refers to sapphire). The device offers TV resolution with excellent sensitivity at temperatures below 120 K. Mean NE(Delta) T as low as 13 mK has been achieved at operating temperatures nonuniformity compensation.

  5. MBE HgCdTe heterostructure detectors

    Science.gov (United States)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  6. DRIFT EFFECTS IN HGCDTE DETECTORS

    Directory of Open Access Journals (Sweden)

    B. PAVAN KUMAR

    2013-08-01

    Full Text Available The characteristics of temporal drift in spectral responsivity of HgCdTe photodetectors is investigated and found to have an origin different from what has been reported in literature. Traditionally, the literature attributes the cause of drift due to the deposition of thin film of ice water on the active area of the cold detector. The source of drift as proposed in this paper is more critical owing to the difficulties in acquisition of infrared temperature measurements. A model explaining the drift phenomenon in HgCdTe detectors is described by considering the deep trapping of charge carriers and generation of radiation induced deep trap centers which are meta-stable in nature. A theoretical model is fitted to the experimental data. A comparison of the model with the experimental data shows that the radiation induced deep trap centers and charge trapping effects are mainly responsible for the drift phenomenon observed in HgCdTe detectors.

  7. Growth, properties and applications of HgCdTe

    Science.gov (United States)

    Schmit, J. L.

    1983-12-01

    This paper provides primarily a review of the methods used to grow HgCdTe with a summary of some of its basic properties and applications. Methods of crystal growth fall generally into three classes: growth from the melt, from solution and from the vapor phase. All three methods have been and are being used to grow HgCdTe. The high vapor pressure of HgCdTe at the melting point, combined with a large segregation coefficient, have effectively limited the use of Czochralski or zone melting techniques, but two melt growth techniques have survived: (1) a variation of Bridgman growth called quench-anneal wherein a dendritic crystal is formed by quenching the melt and is homogenized by solid state recrystallization below the melting point, (2) a variation of freezing from a large volume called slush-growth wherein a melt is held in a temperature gradient for several weeks while a crystal grows. Growth from solution has taken the form of liquid phase epitaxy (LPE) on CdTe with the LPE systems including growth from Hg-rich, HgTe-rich and Te-rich solutions and using tipping, vertical dipping, vertical sliding and horizontal sliding. Vapor phase growth is very promising but is not yet in production. Techniques include growth by isothermal close spaced epitaxy in which HgTe is transported isothermally by chemical potential onto CdTe, molecular beam epitaxy (MBE) in which elements are evaporated in a high vacuum, and metal organic chemical vapor deposition (MOCVD) in which some of the metal atoms are carried to the substrate bound to organic radicals before being freed by pyrolysis. In all these methods, control of Hg pressure is a major concern. The fundamental properties discussed briefly are those of prime interest to detector manufacturers: energy gap ( Eg), intrinsic carrier concentration ( ni), and electrical activity of dopants. A reasonable fit to the Eg data from ˜ 20 papers is given by Eg = -0.302+1.93x+5.35×10 -4T(1-2x)-0.810x 2+0.832x 3. This gap, combined with k

  8. Selective CdTe Nanoheteroepitaxial Growth on Si(100) Substrates Using the Close-Spaced Sublimation Technique Without the Use of a Mask

    Science.gov (United States)

    Diaz, A.; Quinones, S. A.; Ferrer, D. A.

    2013-06-01

    The development of HgCdTe detectors requires high sensitivity, small pixel size, low defect density, long-term thermal-cycling reliability, and large-area substrates. CdTe bulk substrates were initially used for epitaxial growth of HgCdTe films. However, CdTe has a lattice mismatch with long-wavelength infrared (LWIR) and middle-wavelength infrared (MWIR) HgCdTe that results in detrimental dislocation densities above mid-106 cm-2. This work explores the use of CdTe/Si as a possible substrate for HgCdTe detectors. Although there is a 19% lattice mismatch between CdTe and Si, the nanoheteroepitaxy (NHE) technique makes it possible to grow CdTe on Si substrates with fewer defects at the CdTe/Si interface. In this work, Si(100) was patterned using photolithography and dry etching to create 500-nm to 1- μm pillars. CdTe was selectively deposited on the pillar surfaces using the close-spaced sublimation (CSS) technique. Scanning electron microscopy (SEM) was used to characterize the CdTe selective growth and grain morphology, and transmission electron microscopy (TEM) was used to analyze the structure and quality of the grains. CdTe selectivity was achieved for most of the substrate and source temperatures used in this study. The ability to selectively deposit CdTe on patterned Si(100) substrates without the use of a mask or seed layer has not been observed before using the CSS technique. The results from this study confirm that CSS has the potential to be an effective and low-cost technique for selective nanoheteroepitaxial growth of CdTe films on Si(100) substrates for infrared detector applications.

  9. Blanket and Patterned Growth of CdTe on (211)Si Substrates by Metal-Organic Vapor Phase Epitaxy

    Science.gov (United States)

    2012-05-15

    REPORT Blanket and Patterned Growth Of CdTE On (211)Si Substrates By Metal-Organic Vapor Phase Epitaxy 14. ABSTRACT 16. SECURITY CLASSIFICATION OF...Metalorganic vapor phase epitaxy (MOVPE) of (211)B CdTe on (211)Si using intermediate Ge and ZnTe layers has been achieved for use as substrates for the...growth of HgCdTe infrared detector materials. The best (211)B CdTe films grown in this study display a low X-ray diffraction (XRD) rocking-curve

  10. Interface morphology studies of liquid phase epitaxy grown HgCdTe films by atomic force microscopy

    Science.gov (United States)

    Azoulay, M.; George, M. A.; Burger, A.; Collins, W. E.; Silberman, E.

    1994-04-01

    In this paper we report an investigation of the morphology of the interfaces of liquid phase epitaxy (LPE) grown HgCdTe thin films on CdTe and CdZnTe substrates by atomic force microscopy (AFM) on freshly cleaved (110) crystallographic planes. An empirical observation which may be linked to lattice mismatch was indicated by an angle between the cleavage steps of the substrate to those of the film. The precipitates with size ranging from 5 nm to 20 nm were found to be most apparent near the interface.

  11. HgCdTe barrier infrared detectors

    Science.gov (United States)

    Kopytko, M.; Rogalski, A.

    2016-05-01

    In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

  12. Automatic Control System for the High Pressure CdTe Crystal Growth Furnace

    OpenAIRE

    Petr Praus; Eduard Belas; Jiri Bok; Roman Fesh; Jan Franc; Pavel Hoschl

    2006-01-01

    CdTe and (CdZn)Te bulk single crystals have been widely used as substrates for MBE and LPE epitaxy of infrared (HgCd)Te as well as gamma- and X-ray detectors. The Cd1-xZnxTe (x = 0.04-0.1) single crystals with diameter up to 100 mm and height at most 40 mm were prepared in our laboratory in a vertical arrangement by gradual cooling of the melt (the Vertical Gradient Freezing method). Achievement of excellent crystal quality required full control of Cd pressure during the growth process and ap...

  13. CdTe and ZnTe metal interface formation and Fermi-level pinning

    Science.gov (United States)

    Wahi, A. K.; Carey, G. P.; Chiang, T. T.; Lindau, I.; Spicer, W. E.

    1989-01-01

    Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

  14. An investigation for the HgCdTe cleaning process

    Science.gov (United States)

    Lan, Tian-Yi; Wang, Nili; Zhao, Shuiping; Liu, Shi-Jia; Li, Xiang-Yang

    2014-11-01

    A new cleaning process for HgCdTe was designed - which used the improved SC-1,SC-2 and Br2- C2H5OH solutions as the main cleaning fluid and applied mega sound waves in the cleaning process. By analyzing the test results carried out on the HgCdTe surface, it was found that the material of HgCdTe for the application of new cleaning process was better than the one for the application of conventional cleaning process in the minority carrier lifetime, residual organic contamination, responsivity and specific detectivity.

  15. COMPARISON OF CHARACTERIZATION TECHNIQUES IN P-ON-N HgCdTe LWIR PHOTODIODES TECHNOLOGY

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    In this paper standard techniques for characterization of HgCdTe liquid phase epitaxial layers (LPE) were presented. The performance of long wavelength p-on-n HgCdTe photodiodes fabricated by arsenic diffusion was described. The correlation between LPE HgCdTe material parameters and properties of the infrared photodiodes was demonstrated.

  16. Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer

    Science.gov (United States)

    Nishino, H.; Sugiyama, I.; Nishijima, Y.

    1996-09-01

    We studied the misfit stress in CdTe(100)/GaAs(100). In general, this highly mismatched system initially forms a ``coincidence interface,'' where seven CdTe lattices match with eight GaAs lattices. In this system, the epilayer is elastically strained by the mismatch remaining between both groups of lattices. Afterward, the misfit stress is gradually relaxed with the generation of misfit dislocations. In this work, we derived a new model to describe this misfit relaxation mechanism and verified it with experimental observations. As introducing the effects of the interface modification, we found that the simple force balance between the substrate and epilayer governed the misfit stress. We assume that the relaxation process during growth is similar to that in CdTe/CdZnTe, since the residual misfit was fairly small. By extending the stress relaxation model of CdTe/GaAs, it is possible to explain the strain in CdTe/ZnTe/GaAs, which contains two highly mismatched interfaces. The threading dislocations in HgCdTe, derived from the CdTe buffer, decreased with increasing CdTe thickness. Assuming that the misfit dislocations are generated by bending threading dislocations, we could explain the dislocation reduction by utilizing the above misfit stress relaxation model. In spite of the extremely large mismatch, the structural quality of CdTe(100)/GaAs(100) was improved due to the relatively small strain remaining in the coincidence interface.

  17. HgCdTe detector technology at Kunming Institute of Physics

    Science.gov (United States)

    Su, Junhong; Zeng, Gehong

    1996-09-01

    HgCdTe detector and thermal image system laboratories at Kunming Institute of Physics have been carrying the research and development of HgCdTe detectors and thermal imaging systems for a wide range applications for over 20 years. During this period, significant progress has been made in many areas such as HgCdTe material, detector, miniature dewar and cooler to meet the requirements of civil and military operations. This paper describes these activities and present status of HgCdTe technology at Kunming Institute of Physics, and some of the problems we faced and how they were solved.

  18. CdTe devices and method of manufacturing same

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  19. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  20. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

    Science.gov (United States)

    Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

    2016-05-01

    In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

  1. Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure

    Science.gov (United States)

    Yasuda, Arata; Takahashi, Yatsuhiro; Suto, Ken; Nishizawa, Jun-ichi

    2017-07-01

    We propose the use of heavily impurity-doped Pb1-xSnxTe/PbTe epitaxial layers grown via the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE) for the preparation of IV-VI compounds for mid- to far-infrared optical device applications. A flat surface morphology and the distribution of a constant Sn concentration for 0.05 ≤ x ≤ 0.33 were observed in the epitaxial layers using electron-probe microanalysis. The segregation coefficient of Sn in Pb1-xSnxTe grown via TDM-CVP LPE (Tg = 640 °C) was xSSn?xLSn = 0.28. The appearance of the Fermi level pinning and persistent photoconductivity effects in In-doped PbSnTe were also proposed; we estimated that the activation energies of these processes were 2.8 and 39.7 meV, respectively, based on the In-doped Pb1-xSnxTe carrier profile as a function of ambient temperature. In Hall mobility measurements, Sn was assumed to be a main scattering center in the Pb1-xSnxTe epitaxial crystals. The impurity effect was also observed in Pb1-xSnxTe epitaxial growth, similar to the effects observed for Tl-doped PbTe bulk crystals. We concluded that the heavily doped Pb1-xSnxTe crystals grown via TDM-CVP LPE can be used to fabricate high-performance mid- to far-infrared optical devices.

  2. Doping and Diffusion in HgCdTe

    Science.gov (United States)

    1991-01-28

    In’i, -InT. Te - 1.8 ( - 3 .5 )h ( + 2.9 - 6/) TeT1’- Tej . 4 Hg rich HgCdTe Hg - 1.8 + 1.2 + 1.4 - 2p H - ’g, - H g j.. ’TI - tetrahedral position...A. Anderson, Appl. Phys. Lett. 53, 11.81 (1988). B. D. Patterson, Rev. Mod. Phys. 60, 69 (1988). 60 V. A. Singh , C. Weigel, J. W. Corbett, and L. M

  3. Crystal Growth of Solid Solution HgCdTe Alloys

    Science.gov (United States)

    Lehoczky, Sandor L.

    1997-01-01

    The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.

  4. Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

    Indian Academy of Sciences (India)

    J K Radhakrishnan; S Sitharaman; S C Gupta

    2002-11-01

    The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.

  5. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  6. Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Voxtel Inc. proposes to optimize the design of a large area, 1.55?m sensitive HgCdTe avalanche photodiode (APD) that achieves high gain with nearly no excess noise....

  7. Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes

    Science.gov (United States)

    Madejczyk, Pawel; Gawron, Waldemar; Martyniuk, Piotr; Keblowski, Artur; Pusz, Wioletta; Pawluczyk, Jaroslaw; Kopytko, Malgorzata; Rutkowski, Jaroslaw; Rogalski, Antoni; Piotrowski, Jozef

    2017-03-01

    The authors report on energy gap engineering solutions to improve the high-temperature performance of long-wave infrared (LWIR) HgCdTe photodiodes. Metalorganic chemical vapour deposition (MOCVD) technology with a wide range of composition and donor/acceptor doping and without ex-situ post grown annealing seems to be an excellent tool for HgCdTe heterostructure epitaxial growth. The heterojunction HgCdTe photovoltaic device based on epitaxial graded gap structures integrated with Auger-suppression is a magnificent solution for high operating temperature (HOT) infrared detectors. The thickness, composition and doping of HgCdTe heterostructure were optimized with respect to photoelectrical parameters like dark current, the responsivity and the response time. In this paper we focus on graded interface abruptness in the progressive optimization.

  8. MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates

    Science.gov (United States)

    de Lyon, T. J.; Rajavel, R. D.; Nosho, B. Z.; Terterian, S.; Beliciu, M. L.; Patterson, P. R.; Chang, D. T.; Boag-O'Brien, M. F.; Holden, B. T.; Jacobs, R. N.; Benson, J. D.

    2010-07-01

    An investigation of the heteroepitaxial growth of HgCdTe films onto InSb(211)B substrates is reported. High-quality HgCdTe(211)B single-crystal films have been successfully deposited onto InSb(211)B substrates and have been characterized with x-ray diffraction rocking curve analysis, etch pit density analysis, and surface void defect mapping. X-ray rocking curve (422) reflection full-width at half-maximum of 60 arcsec has been obtained for 7- μm-thick x = 0.22 HgCdTe epitaxial films, and etch pit densities of 3 × 106 cm-2 to 3 × 107 cm-2 have been observed. A significant reduction in HgCdTe void defect densities to 100 cm-2 to 200 cm-2 has been observed on InSb, including a complete absence of large “void cluster” defects that are often observed for growth on CdZnTe. Wafer bow induced by the growth of HgCdTe on InSb is less than 1 μm for 2-inch-diameter substrates. Significant diffusion of In into HgCdTe is observed for HgCdTe/InSb wafers that are subjected to Hg anneals at 250°C to 300°C. A preliminary investigation of the transfer of HgCdTe films from InSb onto Si substrates has also been undertaken, using an adhesive wafer bonding approach evaluated with scanning acoustic microscopy. The infrared transmission characteristics of the bonding adhesive have been investigated with respect to postgrowth annealing procedures to establish the compatibility of the bonding approach with HgCdTe device processing and detector operation.

  9. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  10. Minority carrier lifetimes in different doped LWIR HgCdTe grown by LPE

    Science.gov (United States)

    Qiu, GuangYin; Wei, YanFeng; Sun, QuanZhi; Yang, JianRong

    2012-10-01

    The carrier lifetimes of different types of p-type doped HgCdTe(x~0.23) long wavelength infrared (LWIR) epilayers were measured which were Hg-vacancy, Au and arsenic doped ones prepared by Te-rich Liquid-phase epitaxy (LPE). By comparing the lifetimes of Hg-vacancy and extrinsic doped HgCdTe, we focus on three primary mechanisms limiting the lifetimes in these different p-type HgCdTe samples: radiative recombination, Auger recombination and Schokley-Read- Hall (SRH) Recombination. The recombination mechanism in p-type HgCdTe is the SRH recombination at low temperatures and Auger and radiative recombination at high temperature. It is found that the lifetime of As-doped and Au-doped HgCdTe is far longer than that of Hg-vacancy-doped sample which is caused by the deep energy level of the Hg-vacancy acceptor that is considered as a recombination center in HgCdTe. Also we found lifetime in those p-type doped HgCdTe LWIR epilayers is limited by SRH by comparing the experimental lifetimes with the calculated data. Impurity doping was found to have a main effect on minority carrier lifetime.

  11. Recent progress in MBE grown HgCdTe materials and devices at UWA

    Science.gov (United States)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  12. Automatic Control System for the High Pressure CdTe Crystal Growth Furnace

    Directory of Open Access Journals (Sweden)

    Petr Praus

    2006-08-01

    Full Text Available CdTe and (CdZnTe bulk single crystals have been widely used as substrates for MBE and LPE epitaxy of infrared (HgCdTe as well as gamma- and X-ray detectors. The Cd1-xZnxTe (x = 0.04-0.1 single crystals with diameter up to 100 mm and height at most 40 mm were prepared in our laboratory in a vertical arrangement by gradual cooling of the melt (the Vertical Gradient Freezing method. Achievement of excellent crystal quality required full control of Cd pressure during the growth process and application of high Cd pressures (up to 4 bar at growth temperature. An electronic control system was designed to control both temperature and internal pressure of two zones CZT crystal growth furnace by using two high performance PID controllers/setpoint programmers. Two wire current loop serial communication bus was used for the data exchange and computer control of the furnace electronics setup. Control software was written to supervise the crystal growth process and to collect all important data and parameters.

  13. Mercury cadmium telluride (HgCdTe) passivation by advanced thin conformal Al2O3 films

    Science.gov (United States)

    Fu, Richard; Pattison, James; Chen, Andrew; Nayfeh, Osama

    2012-06-01

    HgCdTe passivation process must be performed at low temperature in order to reduce Hg depletion. Low temperature plasma enhanced atomic layer deposition (PE-ALD) is an emerging deposition technology for thin highly conformal films to meet the demand. Room temperature PE-ALD Al2O3 film's passivation on HgCdTe has been studied. Conformal film was investigated through SEM images of the Al2O3 film deposited onto high aspect ratio features dry etched into HgCdTe. Minority carrier lifetime was measured and compared by photoconductive decay transients of HgCdTe before and after deposition. Room temperature ALD Al2O3 film increased the minority carrier lifetime of HgCdTe.

  14. Can graphene make better HgCdTe infrared detectors?

    Directory of Open Access Journals (Sweden)

    Shi Yanli

    2011-01-01

    Full Text Available Abstract We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.

  15. ROIC for HgCdTe e-APD FPA

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2013-08-01

    Ultra-low light imaging and passive/active dual mode imaging require very low noise optical receivers to achieve detection of fast and weak optical signal. HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode is the detector of choice thanks to its high quantum efficiency, high gain at low bias, high bandwidth and low noise factor. In my work, a passive/active dual mode readout integrated circuit (ROIC) of e-APD focal plane array (FPA) is designed. Unit cell circuit architecture of ROIC includes a capacitance feedback transimpedance amplifier (CTIA) as preamplifier of ROIC, a high voltage protection module, a comparator, a Sample-Hold circuit module, and output driver stage. There is a protection module in every unit cell circuit which can avoid ROIC to be damaged from avalanche breakdown of some diodes of detector. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area rather than Laterally Diffused Metal Oxide Semiconductor (LDMOS) in high voltage BCD process in the limited 100um×100um pitch area. In CTIA module, three integration capacitances are included in the CTIA module, two of them are switchable to provide different well capacity and noise. Constraints such as pixel area, stability and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier. High voltage protection module can protect ROIC to be damaged because of breakdown of some avalanche diodes.

  16. Ion Beam Nanostructuring of HgCdTe Ternary Compound

    Science.gov (United States)

    Smirnov, Aleksey B.; Savkina, Rada K.; Udovytska, Ruslana S.; Gudymenko, Oleksandr I.; Kladko, Vasyl P.; Korchovyi, Andrii A.

    2017-05-01

    Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 - x Cd x Te ( x 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 - x Cd x Te cubic phase with alternative compound ( x 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or "negative capacitance") is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP 4.5 × 10-8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.

  17. Simulation of Small-Pitch HgCdTe Photodetectors

    Science.gov (United States)

    Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, Wilhelm; Hanna, Stefan; Figgemeier, Heinrich

    2017-09-01

    Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the advantage of smaller volume, lower weight, and potentially lower cost. In order to assess the limits of pixel pitch scaling, we present combined three-dimensional optical and electrical simulations of long-wavelength infrared HgCdTe FPAs, with 3 μm, 5 μm, and 10 μm pitch. Numerical simulations predict significant cavity effects, brought by the array periodicity. The optical and electrical contributions to spectral inter-pixel crosstalk are investigated as functions of pixel pitch, by illuminating the FPAs with Gaussian beams focused on the central pixel. Despite the FPAs being planar with 100% pixel duty cycle, our calculations suggest that the total crosstalk with nearest-neighbor pixels could be kept acceptably small also with pixels only 3 μ m wide and a diffraction-limited optical system.

  18. Dislocation reduction in HgCdTe grown on CdTe/Si

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Bulk-grown CdZnTe (Zn = 3%) substrates are the natural choice for HgCdTe epitaxy since it is lattice matched to long wave LW-HgCdTe alloy. However, lack of large area CdZnTe substrates, high production costs, and more importantly, the difference in thermal expansion coefficients between CdZnTe and silicon Read out Integrated Circuits (ROIC) are some of the inherent drawbacks of CdZnTe substrates. Consequently, Hg1-xCdxTe detectors fabricated on silicon substrates are an attractive alternative. Recent developments in the molecular beam epitaxy (MBE) buffer layer growth technology on Si substrates has revolutionized the HgCdTe research and offered a new dimension to HgCdTe-based IR technology. Si substrates provide advantages in terms of relatively large area (3 to 6-inch diameter is easily obtained) compared to CZT substrate materials, durability during processing, and reliability to thermal cycling. Innovations in Si-based composite substrates made it possible to fabricate very large-format IR arrays that offer higher resolution, low-cost arrays and more dies per wafer. Between Si substrates and HgCdTe has large lattice mismatch of 19%. This leads to dislocation densities of low-107 cm-2 for optimal growth of HgCdTe on silicon-based substrates as compared to the mid-104 cm-2 dislocation density of HgCdTe grown on CdZnTe. This paper present dislocation reduction by two orders of magnitude using thermal cycle anneal under Hg environment on HgCdTe grown on Si substrates and as well as defect reduction in Cd(Se)Te buffer layers grown on Si Substrates.

  19. Recent progress for HGCDTE quantum detection in France

    Science.gov (United States)

    Gravrand, O.; Destefanis, G.

    2013-07-01

    Due to its tuneable narrow band gap, HgCdTe (MCT) is a material of choice for high complexity IR focal plane arrays (FPAs). Being a strategic defence technology, MCT detector developments is totally mastered at every stage of fabrication at LETI and Sofradir, from the lattice matched CZT substrate growth, the active layer MCT growth, to PV technology, silicon ROIC design and flip chip hybridization. Within the last few years, MCT devices have considerably evolved in terms of device complexity, performances, and field of action. n/p standard technology has been developed in all spectral ranges, from VLWIR (20 μm) down SWIR (1.7 μm). MCT photodiode sensibility goes even lower, down to visible and even UV with a constant quantum efficiency. Moreover, MCT material provides us with high and noiseless avalanche gains inside the photodiode itself, which we are now fully able to use for the optimization of FPA performances. Besides, p/n diode structure is a new emerging process which improves detector performances by several orders of magnitude in terms of dark current, by comparison with the n/p historical structure. This technology has been successfully demonstrated from VLWIR (15 μm cut off) down to the SWIR range (2 μm cut off) where ultra low dark currents are recorded at low temperatures (0.4 e/s). In the same time, first dual band FPAs are delivered, which are expected to be the 3rd generation of IR detectors. At last, considerable efforts are made in order to increase the operational temperature, going from 100 K to 150 K for MWIR FPAs at constant performances, optimizing all technological steps, especially growth issues. Going at even higher operating temperatures (HOTs) is also under active study.

  20. Monolithic dual-band HgCdTe infrared detector structure

    CSIR Research Space (South Africa)

    Parish, G

    1997-07-01

    Full Text Available A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid...

  1. Real Time Monitor and Control of MBE Growth of HgCdTe by Spectroscopic Ellipsometry.

    Science.gov (United States)

    2007-11-02

    The primary goal of this contract develop a real-time monitoring capability for HgCdTe composition during MBE growth . This goal was realized by...methodology for acquiring and analyzing insitu SE data in the MBE growth environment. These improvements and developments are part of an extensive

  2. Thermal Cycle Annealing and its Application to Arsenic-Ion Implanted HgCdTe

    Science.gov (United States)

    2014-06-26

    doping profile, as shown in Figure 3. The TCA treatment on the unimplanted epilayers showed an exponential defect reduction proportional to the...Chamonal, P. Castelein, J. Zanatta, M. Tchagaspanian, A. Papon, J. Barnes, F. Henry, S. Gout , G. Bourgeois, C. Pautet and P. Fougeres, "HgCdTe FPAs

  3. Arsenic complexes optical signatures in As-doped HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. [CEA-LETI Minatec Campus, 17 rue des Martyrs, 38000 Grenoble (France)

    2013-04-08

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  4. Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

    Science.gov (United States)

    Benson, J. David; Stoltz, Andrew J., Jr.; Kaleczyc, Andrew W.; Martinka, Mike; Almeida, Leo A.; Boyd, Phillip R.; Dinan, John H.

    2002-12-01

    Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

  5. Temperature-driven massless Kane fermions in HgCdTe crystals

    Science.gov (United States)

    Teppe, F.; Marcinkiewicz, M.; Krishtopenko, S. S.; Ruffenach, S.; Consejo, C.; Kadykov, A. M.; Desrat, W.; But, D.; Knap, W.; Ludwig, J.; Moon, S.; Smirnov, D.; Orlita, M.; Jiang, Z.; Morozov, S. V.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretskii, S. A.

    2016-08-01

    It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in condensed matter systems. These single valley relativistic states, massless Kane fermions, cannot be described by any other relativistic particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying cadmium content or temperature. At critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest mass of Kane fermions changes sign at critical temperature, whereas their velocity remains constant. The velocity universal value of (1.07+/-0.05) × 106 m s-1 remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Kane fermions in HgCdTe.

  6. CdTe Films Deposited by Closed-space Sublimation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at substrate temperature higher than 400℃. And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity. Treatment with CdCl2 methanol solution promotes the crystallite growth of CdTe films during annealing.

  7. Synthesis and Surface Modification of CdTe Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    CdTe nanocrystals were prepared in aqueous solution via the reaction between Cd2+ and NaHTe in the presence of mercaptoacetic acid. Interactions between CdTe nanocrystals and phenylalanine were formed via electrostatic/coordinate self-assembly. The photoluminescence intensity of CdTe nanocrystals was improved obviously. The interaction mechanism was discussed and was considered to be surface passivation.

  8. CdTe nanoparticles for the deposition of CdTe films using close spaced sublimation

    Science.gov (United States)

    Schumm, Benjamin; Althues, Holger; Kaskel, Stefan

    2010-08-01

    In this work a nanostructured CdTe powder was applied as a source material for CdTe film deposition via Close Spaced Sublimation (CSS). Growth kinetics and the resulting film properties were studied and compared to the films deposited from a commercially available CdTe bulk powder as source. The nanostructured powder was synthesized by a solvothermal elemental reaction of Cd and Te in ethylene diamine leading to particles of around 100-500 nm in diameter with a specific surface area of 4.1 m 2 g -1. An increase in the deposition rate by the factor of 1.7 was observed for the nanostructured powder as compared to the bulk material.

  9. HgCdTe Infrared Avalanche Photodiode Single Photon Detector Arrays for the LIST and Other Decadal Missions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Develop a HgCdTe avalanche photodiode (APD)  SWIR/IR linear mode photon counting (LMPC) array detector system in support of the LIST lidar. Provide a new type...

  10. Thin-film CdTe cells: Reducing the CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Plotnikov, V.; Liu, X.; Paudel, N.; Kwon, D.; Wieland, K.A.; Compaan, A.D., E-mail: alvin.compaan@utoledo.edu

    2011-08-31

    Polycrystalline thin-film CdTe is currently the dominant thin-film technology in world-wide PV manufacturing. With finite Te resources world-wide, it is appropriate to consider the limits to reducing the thickness of the CdTe layer in these devices. In our laboratory we have emphasized the use of magnetron sputtering for both CdS and CdTe achieving AM1.5 efficiency over 13% on 3 mm soda-lime glass with commercial TCO and 14% on 1 mm aluminosilicate glass. This deposition technique is well suited to good control of very thin layers and yields relatively small grain size which also facilitates high performance with ultra-thin layers. This paper describes our magnetron sputtering studies for fabrication of very thin CdTe cells. Our thinnest cells had CdTe thicknesses of 1 {mu}m, 0.5 {mu}m and 0.3 {mu}m and yielded efficiencies of 12%, 9.7% and 6.8% respectively. With thinner cells Voc, FF and Jsc are reduced. Current-voltage (J-V), temperature dependent J-V (J-V-T) and apparent quantum efficiency (AQE) measurements provide valuable information for understanding and optimizing cell performance. We find that the stability under light soak appears not to depend on CdTe thickness from 2.5 to 0.5 {mu}m. The use of semitransparent back contacts allows the study of bifacial response which is particularly useful in understanding carrier collection in the very thin devices.

  11. Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

    Science.gov (United States)

    Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

    2017-09-01

    Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

  12. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    Science.gov (United States)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-09-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  13. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  14. Lattice sites of Li in CdTe

    NARCIS (Netherlands)

    Restle, M; BharuthRam, K; Quintel, H; Ronning, C; Hofsass, H; Wahl, U; Jahn, SG

    1996-01-01

    The lattice site occupation of Li in CdTe at temperatures between 40 and 500 K was investigated with the emission channeling method. Radioactive Li-8 ions were implanted at low doses into CdTe single crystals. Emission channeling patterns of alpha-particles emitted in the nuclear decay of Li-8 (t(1/

  15. Investigation of possibility of VLWIR lasing in HgCdTe based heterostructures

    Science.gov (United States)

    Morozov, S. V.; Rumyantsev, V. V.; Kadykov, A. M.; Dubinov, A. A.; Antonov, A. V.; Kudryavtsev, K. E.; Kuritsin, D. I.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.; Gavrilenko, V. I.

    2015-10-01

    The optical properties of a number of Hg1-xCdxTe bulk epilayers (x = 0.152 - 0.23) and heterostructures with quantum wells (QW) based on narrow gap HgCdTe are examined aiming to reveal the prospects of such structures for laser development in long wave infrared and very long wave infrared ranges. Experimental evidence of long wavelength superluminescence, i.e. amplification of spontaneous emission, at 8.4 μm in narrow gap HgCdTe bulk epitaxial film at 100 K is reported. Employing heterostructures with QW is demonstrated to be promissory for furthering the radiation wavelength to 10 - 30 μm range.

  16. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    Science.gov (United States)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  17. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  18. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  19. Candidate 10 micron HgCdTe arrays for the NEOCam space mission

    Science.gov (United States)

    McMurtry, Craig W.; Dorn, Meghan; Cabrera, Mario S.; Pipher, Judith L.; Forrest, William J.; Mainzer, Amy K.; Wong, Andre

    2016-08-01

    The Near Earth Object Camera (NEOCam, Mainzer et al. 2015) is one of five NASA Discovery Class mission experiments selected for Phase A: down-select to one or two experiments will take place late in 2016. NEOCam will survey the sky in search of asteroids and comets, particularly those close to the Earth's orbit. The NEOCam infrared telescope will have two infrared (IR) channels; one covering 4 to 5 microns, and one covering 6-10 microns. Both IR cameras will use multiple 2Kx2K pixel format HAWAII-2RG arrays with different cutoff wavelength HgCdTe detectors from Teledyne Imaging Sensors. Past development work by the University of Rochester with Teledyne Imaging Sensors and JPL (McMurtry et al. 2013, Dorn et al. 2016) focused upon bringing the 10 micron HgCdTe detector technology up to NASA TRL 6+. This work extends that development program to push the format from 1Kx1K to the larger 2Kx2K pixel array. We present results on the first 2Kx2K candidate 10 micron cutoff HgCdTe arrays, where we measured the dark current, read noise, and total noise.

  20. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  1. Recent progress in the doping of MBE HgCdTe

    Science.gov (United States)

    Sivananthan, Sivalingam; Wijewarnasuriya, P. S.; Faurie, Jean-Pierre

    1995-09-01

    We present a review of the recent progress in the doping of HgCdTe grown by molecular beam epitaxy. A detailed analysis of the unintentional/intrinsic, n-type, and p-type doping is presented. Our results show that CdZnTe substrates should be carefully screened to reduce the out-diffusion of impurities from the substrate. N-type HgCdTe layers exhibit excellent Hall characteristics down to indium levels of 2 X 10(superscript 15) cm(superscript -3). Electron mobilities in the range of (2 - 3) X 10(superscript 5) cm(superscript 2)/vs at 23 K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below 2 X 10(superscript 15) cm(superscript -3) doping levels, minority carrier lifetime is limited by Schockley-Reed recombination. We have implemented planar doping with arsenic as p-type dopant during MBE growth. Our results clearly indicate that arsenic incorporates as an acceptor dopant during the growth of MBE HgCdTe.

  2. Proton irradiation results for long-wave HgCdTe infrared detector arrays for NEOCam

    CERN Document Server

    Dorn, M; McMurtry, C; Hartman, S; Mainzer, A; McKelvey, M; McMurray, R; Chevara, D; Rosser, J

    2016-01-01

    HgCdTe detector arrays with a cutoff wavelength of ~10 ${\\mu}$m intended for the NEOCam space mission were subjected to proton beam irradiation at the University of California Davis Crocker Nuclear Laboratory. Three arrays were tested - one with 800 $\\mu$m substrate intact, one with 30 $\\mu$m substrate, and one completely substrate-removed. The CdZnTe substrate, on which the HgCdTe detector is grown, has been shown to produce luminescence in shorter wave HgCdTe arrays that causes elevated signal in non-hit pixels when subjected to proton irradiation. This testing was conducted to ascertain whether or not full substrate removal is necessary. At the dark level of the dewar, we detect no luminescence in non-hit pixels during proton testing for both the substrate-removed detector array and the array with 30 ${\\mu}$m substrate. The detector array with full 800 ${\\mu}$m substrate exhibited substantial photocurrent for a flux of 103 protons/cm$^2$-s at a beam energy of 18.1 MeV (~ 750 e$^-$/s) and 34.4 MeV ($\\sim$ 6...

  3. CdTe ambulatory ventricular function monitor

    Energy Technology Data Exchange (ETDEWEB)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients.

  4. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  5. Auger relative sensitivivity factors for CdTe oxide

    OpenAIRE

    P. Bartolo-Pérez; J. L. Peña; M.H. Farías

    1999-01-01

    The Auger lineshape of Te MNN in measurements of Auger spectra of CdTe oxide films with various degrees of oxidation was analyzed. By using standards from stoichiometric compounds, Auger relative sensitivity factors (RSF´s) of Cd, Te and O for CdTe oxide thin films were obtained. The value of the RFS of oxygen is about constant, 0.27-0.28, for the standard compound, CdO, TeO2 and CdTeO3 (considering the RSF of Cd as 1). However, the obtained RSF of Te changes from 0.69 in CdTe up to 0.87 in C...

  6. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  7. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  8. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  9. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State Univeristy; Brinkman, Daniel [Arizona State Univeristy; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Dragica, Vasileska [Arizona State Univeristy; Ringhofer, Christian [Arizona State University

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  10. Studies of key technologies for CdTe solar modules

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.

  11. Controlled Synthesis of Nanoscale CdTe Urchins

    Institute of Scientific and Technical Information of China (English)

    BAO Jian; SHEN Yue; SUN Yan; YUE Yang; CHEN Xin; DAI Ning

    2009-01-01

    We presented a simple route to prepare nanoscale CdTe urchins in a tri-n-octylphosphine oxide(TOPO)system.CdTe urchins consisted of a core and several attached arms.The arms were ca.3 nm wide,and their lengths could be controlled with the reaction time.The authors investigated the optical absorption and structural properties of the prepared CdTe.The lengths of the arms could be tuned into CdTe nanourchins,which led to a change in the photophysical properties of the nanoscale CdTe urchins.The results,including transmission electron microscopy(TEM) and absorption spectra,indicated that mesoporous silica and aminopropyltriethoxysilane(APTES) contributed to the formation of nanoscale CdTe urchins.

  12. Interaction of porphyrins with CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)

    2011-05-13

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  13. Spatial Distribution of Dopant Incorporation in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt; Al-Jassim, Mowafak

    2016-11-21

    In this work we use state-of-the-art cathodoluminescence (CL) spectrum imaging that provides spectrum-per-pixel mapping of the CL emission to examine how dopant elements are incorporated into CdTe. Emission spectra and intensity are used to monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on theoretical modeling. Our results show that grain boundaries play a role in the incorporation of dopants in CdTe, whether intrinsic or extrinsic. This type of analysis is crucial for providing feedback to design different processing schedules that optimize dopant incorporation in CdTe photovoltaic material, which has struggled to reach high carrier concentration values. Here, we present results on CdTe films exposed to copper, phosphorus, and intrinsic doping treatments.

  14. Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

    Science.gov (United States)

    Akhavan, Nima Dehdashti; Jolley, Gregory; Umana-Membreno, Gilberto A.; Antoszewski, Jarek; Faraone, Lorenzo

    2015-09-01

    We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/ n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thickness of the barrier layer in MWIR HgCdTe nBn detectors can be optimized to yield performance levels comparable with those of ideal HgCdTe p- n photodiodes. It is also shown that introduction of an additional barrier at the back contact layer of the detector structure (nBnn+) leads to substantial suppression of the Auger generation-recombination (GR) mechanism; this results in an order-of-magnitude reduction in the dark current level compared with conventional nBn or p- n junction-based detectors, thus enabling background-limited detector operation above 200 K.

  15. Numerical modeling of HgCdTe solidification: effects of phase diagram double-diffusion convection and microgravity level

    Science.gov (United States)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1997-07-01

    A numerical model of HgCdTe solidification was implemented using finite the element code FIDAP. Model verification was done using both experimental data and numerical test problems. The model was used to eluate possible effects of double- diffusion convection in molten material, and microgravity level on concentration distribution in the solidified HgCdTe. Particular attention was paid to incorporation of HgCdTe phase diagram. It was found, that below a critical microgravity amplitude, the maximum convective velocity in the melt appears virtually independent on the microgravity vector orientation. Good agreement between predicted interface shape and an interface obtained experimentally by quenching was achieved. The results of numerical modeling are presented in the form of video film.

  16. Dynamic effects in CdTe quantum-dot LEDs

    OpenAIRE

    Gallardo, D. E.

    2006-01-01

    In this work the electrical and electroluminescence properties CdTe nanocrystal films were analysed. The structure consisted of a multilayer of CdTe nanocrystals deposited by the layer-by-layer technique, sandwiched between an ITO anode and an aluminium cathode. The first part of this work was dedicated to structural and process improvement. Earlier devices, produced through a layer-by-layer (LbL) manual procedure, had an average thickness of 30nm per nanocrystal monolayer,...

  17. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  18. CdTe Photovoltaic Devices for Solar Cell Applications

    Science.gov (United States)

    2011-12-01

    July 28, 2011 14. ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film solar cells because of...mail.mil Phone: 301 394 0963 ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film ...absorption coefficient allows films as thin as 2 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 17% have been

  19. Temperature dependent electroreflectance study of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Raadik, T., E-mail: taavi.raadik@ttu.ee [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J.; Josepson, R.; Hiie, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Potlog, T.; Spalatu, N. [Moldova State University, A. Mateevici str. 60, MD-2009 Chisinau (Moldova, Republic of)

    2013-05-01

    Cadmium telluride is a promising material for large scale photovoltaic applications. In this paper we study CdS/CdTe heterojunction solar cells with electroreflectance spectroscopy. Both CdS and CdTe layers in solar cells were grown sequentially without intermediate processing by the close-space sublimation method. Electroreflectance measurements were performed in the temperature range of T = 100–300 K. Two solar cells were investigated with conversion efficiencies of 4.1% and 9.6%. The main focus in this work was to study the temperature dependent behavior of the broadening parameter and the bandgap energy of CdTe thin film in solar cells. Room temperature bandgap values of CdTe were E{sub g} = 1.499 eV and E{sub g} = 1.481 eV for higher and lower efficiency solar cells, respectively. Measured bandgap energies are lower than for single crystal CdTe. The formation of CdTe{sub 1−x}S{sub x} solid solution layer on the surface of CdTe is proposed as a possible cause of lower bandgap energies. - Highlights: ► Temperature dependent electroreflectance measurements of CdS/CdTe solar cells ► Investigation of junction properties between CdS and CdTe ► Formation of CdTe{sub 1−} {sub x}S{sub x} solid solution layer in the junction area.

  20. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  1. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  2. Visible to SWIR response of HgCdTe HDVIP detectors

    Science.gov (United States)

    D'Souza, A. I.; Robinson, E. W.; Stapelbroek, M. G.; Wong, W.; Skokan, M.; Shih, H.-D.

    2009-05-01

    Detectors that have broadband response from the visible (~ 400 nm) to near infrared (~ 2.5 μm) have remote sensing hyperspectral applications on a single chip. 2.2 and 2.5 μm cutoff detectors permit operation in the 200 K range. The DRS HDVIP detector technology is a front side illuminated detector technology. Consequently, there is no substrate to absorb the visible photons as in backside-illuminated detectors and these 2.2 and 2.5-μm-cutoff detectors should be well suited to respond to visible light. However, HDVIP detectors are passivated using CdTe that absorbs the visible light photons. CdTe with a direct bandgap ~ 1.6 eV strongly absorbs photons of wavelength shorter than about 800 nm. Detectors in 320 x 6 arrays with varying thickness of CdTe passivation layers were fabricated to investigate the visible response of the 2.5-μm-cutoff detectors. The SWIR HDVIP detectors have well known high quantum efficiency (QE) in the near infrared region. Focus here was in acquiring array level data in the visible region of the spectrum. 320 x 6 FPA QE and NEI data was acquired using a 642 nm narrow band filter with 50 % points at 612 nm and 698 nm. The array QE average is ~ 70 % for the array with CdTe passivation thickness = 44.5 nm. The NEI is ~ 5 x 1010 ph/cm2/s at a flux Φ = 5.36 x 1013 ph/cm2/s. QE for an array with CdTe passivation thickness = 44.5 nm is ~ 10 % higher than an array with CdTe passivation thickness = 79.3 nm. In addition, a model that takes into account the complex optical properties of every layer in the HDVIP photodiode architecture was developed to predict the QE of the detectors in the near infrared and visible wavelength regions as a function of CdTe thickness. Measured QE as a function of wavelength is not a good match to the model QE probably due to limitations in the measured QE and knowledge of optical constants that are input into the model.

  3. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  4. Thermal cycling reliability of indirect hybrid HgCdTe infrared detectors

    Science.gov (United States)

    Chen, Xing; He, Kai; Wang, Jian-xin; Zhang, Qin-yao

    2013-09-01

    Thermal cycling reliability is one of the most important issues whether the HgCdTe infrared focal plane array detectors can be applied to both military and civil fields. In this paper, a 3D finite element model for indirect hybrid HgCdTe infrared detectors is established. The thermal stress distribution and thermally induced warpage of the detector assembly as a function of the distance between the detector chip and Si-ROIC, the thickness and the materials properties of electrical lead board in cryogenic temperature are analyzed. The results show that all these parameters have influences on the thermal stress distribution and warpage of the detector assembly, especially the coefficient of thermal expansion(CTE) of electrical lead board. The thermal stress and warpage in the assembly can be avoided or minimized by choosing the appropriate electrical lead board. Additionally, the warpage of some indirect hybrid detectors assembly samples is measured in experiment. The experimental results are in good agreement with the simulation results, which verifies that the results are calculated by finite element method are reasonable.

  5. Analysis of carrier concentration, lifetime, and electron mobility on p-type HgCdTe

    Science.gov (United States)

    Yoo, Sang Dong; Kwack, Kae Dal

    1998-03-01

    Minority carrier transport characteristics of vacancy-doped p-type HgCdTe such as carrier concentration, lifetime, and mobility are investigated. In the calculation of the carrier concentration two acceptor levels—a donor level and a trap level—were taken into account. The acceptor levels have been described by two models—two independent singly ionized levels and a divalent level with two ionization energies. When each model was examined by calculating electron mobility as a function of temperature, the latter was found to be more accurate. Electron mobility as a function of majority carrier concentration was also presented for both n-type and p-type HgCdTe with 0.225 Cd mole fraction. Steady state electron lifetime was computed assuming the acceptor levels and the trap level would act as Schokley-Read-Hall type recombination centers. The calculated results using the divalent acceptor model were in good agreement with the experimental data.

  6. Developments in MOVPE HgCdTe arrays for passive and active infrared imaging

    Science.gov (United States)

    Baker, Ian; Maxey, Chris; Hipwood, Les; Weller, Harald; Thorne, Peter

    2012-09-01

    SELEX Galileo Infrared Ltd has developed a range of 3rd Generation infrared detectors based on HgCdTe grown by Metal Organic Vapour Phase Epitaxy (MOVPE) on low cost GaAs substrates. There have been four key development aims: reducing the cost especially for large arrays, extending the wavelength range, improving the operating temperature for lower power, size and weight cameras and increasing the functionality. Despite a 14% lattice mismatch between GaAs and HgCdTe MOVPE arrays show few symptoms of misfit dislocations even in longwave detectors. The key factors in the growth and device technology are described in this paper to explain at a scientific level the radiometric quality of MOVPE arrays. A feature of the past few years has been the increasingly sophisticated products that are emerging thanks to custom designed silicon readout devices. Three devices are described as examples: a multifunctional device that can operate as an active or passive imager with built-in range finder, a 3-side buttable megapixel array and an ultra-low noise device designed for scientific applications.

  7. Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe

    Science.gov (United States)

    Grenouilloux, T.; Ferron, A.; Péré-Laperne, N.; Mathiot, D.

    2017-09-01

    Due to its low diffusivity and high activation rate, arsenic has become the dopant of choice in p/n HgCdTe high operating temperature technology. Its diffusion mechanism, however, remains imprecise. In this work, arsenic diffusion was studied in molecular beam epitaxy HgCdTe structures consisting of alternatively As-doped and intrinsic layers grown on a CdZnTe substrate. The diffusion coefficient of As was extracted from secondary ion mass spectroscopy concentration profiles. Annealings were performed for different temperatures, mercury partial pressures ( P Hg), annealing times and cadmium atomic fractions. Fermi-level effect on diffusion was observed, indicating extrinsic conditions for diffusion at high As concentration. Based on the variation of As diffusivity with P Hg and As concentration, we propose that As diffusion occurs on both II and VI sublattices. Our results are consistent with the fact that AsVI diffusion is assisted by the Te interstitial, introducing donor levels in the bandgap, while AsII diffusion is assisted by the cation vacancy.

  8. Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

    Science.gov (United States)

    Schuster, J.; DeWames, R. E.; DeCuir, E. A.; Bellotti, E.; Dhar, N.; Wijewarnasuriya, P. S.

    2016-09-01

    Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7-3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extremely low dark current (less than 0.01 electrons per pixel per second for certain applications). In these detectors, sources of dark current that may limit the overall system performance are fundamental and/or defect-related mechanisms. Non-optimized growth/device processing may present material point defects within the HgCdTe bandgap leading to Shockley-Read-Hall dominated dark current. While realizing contributions to the dark current from only fundamental mechanisms should be the goal for attaining optimal device performance, it may not be readily feasible with current technology and/or resources. In this regard, the U.S. Army Research Laboratory performed physics-based, two- and three-dimensional numerical modeling of HgCdTe photovoltaic infrared detectors designed for operation in the eSWIR spectral band. The underlying impetus for this capability and study originates with a desire to reach fundamental performance limits via intelligent device design.

  9. High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development

    Science.gov (United States)

    Bommena, R.; Ketharanathan, S.; Wijewarnasuriya, P. S.; Dhar, N. K.; Kodama, R.; Zhao, J.; Buurma, C.; Bergeson, J. D.; Aqariden, F.; Velicu, S.

    2015-09-01

    The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates is reported. High-quality n-type MWIR HgCdTe layers with a cutoff wavelength of 4.90 μm at 77 K and a carrier concentration of 1-2 × 1015 cm-3 were grown on CdTe/Si substrates by MBE. Highly uniform composition and thickness over 3-inch areas were demonstrated, and low surface defect densities (voids ~5 × 102 cm-2, micro-defects ~5 × 103 cm-2) and etch pit density (~3.5 × 106 cm-2) were measured. This material was used to fabricate 320 × 256, 30 μm pitch FPAs with planar device architecture; arsenic implantation was used to achieve p-type doping. Radiometric and noise characterization was also performed. A low NEDT of 13.8 m K at 85 K for a 1 ms integration time with f/#2 optics was measured. The NEDT operability was 99% at 120 K with a mean dark current noise of 8.14 × 10-13 A/pixel. High-quality thermal images were obtained from the FPA up to a temperature of 150 K.

  10. Real-Time Monitoring and Control of HgCdTe MBE Using an Integrated Multi-Sensor System

    Science.gov (United States)

    1998-08-01

    layer composition, and effusion cell flux during MBE growth of HgCdTe epilayers for advanced IR detectors. Substrate temperature is measured and...HgCdTe MBE growth of high performance IR detector structures over a wide range of compositions, layer thickness and substrate temperature.

  11. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  12. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  13. HgCdTe and silicon detectors and FPAs for remote sensing applications

    Science.gov (United States)

    D'Souza, Arvind I.; Stapelbroek, Maryn G.; Robinson, James E.

    2004-02-01

    Photon detectors and focal plane arrays (FPAs) are fabricated from HgCdTe and silicon in many varieties. With appropriate choices for bandgap in HgCdTe, detector architecture, dopants, and operating temperature, HgCdTe and silicon can cover the spectral range from ultraviolet to the very-long-wavelength infrared (VLWIR), exhibit high internal gain to allow photon counting over this broad spectral range, and can be made in large array formats for imaging. DRS makes HgCdTe and silicon detectors and FPAs with unique architectures for a variety of applications. Detector characteristics of High Density Vertically Integrated Photodiode (HDVIP) HdCdTe detectors as well as Focal Plane Arrays (FPAs) are presented in this paper. MWIR[λc(78 K) = 5 μm] HDVIP detectors RoA performance was measured to within a factor or two or three of theoretical. In addition, 256 x 256 detector arrays were fabricated. Initial measurements had seven out of ten FPAs having operabilities greater than 99.45% with the best 256 x 256 array having only two inoperable pixels. LWIR [λc(78K)~10 μm] 640 X 480 arrays and a variety of single color linear arrays have also been fabricated. In addition, two-color arrays have been fabricated. DRS has explored HgCdTe avalanche photo diodes (APDs) in the λc = 2.2 μm to 5 μm range. The λc = 5 μm APDs have greater than 200 DC gain values at 8 Volts bias. Large-format to 10242 Arsenic-doped (Si:As, λc ~ 28 μm), Blocked-Impurity-Band (BIB) detectors have been developed for a variety of pixel formats and have been optimized for low, moderate, and high infrared backgrounds. Antimony-doped silicon (Si:Sb) BIB arrays having response to wavelengths > 40 μm have also been demonstrated. Avalanche processes in Si:As at low temperatures (~ 8 K) have led to two unique solid-state photon-counting detectors adapted to infrared and visible wavelengths. The infrared device is the solid-state photomultiplier (SSPM). A related device optimized for the visible spectral

  14. Recent advances in thin film CdTe solar cells

    Science.gov (United States)

    Ferekides, Chris S.; Ceekala, Vijaya; Dugan, Kathleen; Killian, Lawrence; Oman, Daniel; Swaminathan, Rajesh; Morel, Don

    1996-01-01

    CdTe thin film solar cells have been fabricated on a variety of glass substrates (borosilicate and soda lime). The CdS films were deposited to a thickness of 500-2000 Å by the chemical bath deposition (CBD), rf sputtering, or close spaced sublimation (CSS) processes. The CdTe films were deposited by CSS in the temperature range of 450-625 °C. The main objective of this work is to fabricate high efficiency solar cells using processes that can meet low cost manufacturing requirements. In an attempt to enhance the blue response of the CdTe cells, ZnS films have also been prepared (CBD, rf sputtering, CSS) as an alternative window layer to CdS. Device behavior has been found to be consistent with a recombination model.

  15. Resetting the Defect Chemistry in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  16. Study of Back Contacts for CdTe Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    ZnTe/ZnTe∶Cu layer is used as a complex back contact. The parameters of CdTe solar cells with and without the complex back contacts are compared. The effects of un-doped layer thickness, doped concentration and post-deposition annealing temperature of the complex layer on solar cells performance are investigated.The results show that ZnTe/ZnTe∶Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells. Un-doped layer and post-deposition annealing of high temperature can increase open voltage. Using the complex back contact, a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained.

  17. Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to 14 microns. However, due to the cooling...

  18. Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to14 um. However, the cooling requirements make...

  19. Effects of Antimony Doping in Polycrystalline CdTe Thin-Film Solar Cells

    Science.gov (United States)

    Okamoto, Tamotsu; Ikeda, Shigeyuki; Nagatsuka, Satsuki; Hayashi, Ryoji; Yoshino, Kaoru; Kanda, Yohei; Noda, Akira; Hirano, Ryuichi

    2012-10-01

    The effects of antimony (Sb) doping of the CdTe layer in the CdTe solar cells were investigated using Sb-doped CdTe powders as source materials for CdTe deposition by the close-spaced sublimation (CSS) method. Conversion efficiency increased with increasing Sb concentration below 1×1018 cm-3, mainly owing to the improvement of the fill factor. Secondary ion microprobe mass spectrometry (SIMS) depth profile revealed that the Sb impurities at a concentration of approximately 1×1016 cm-3 were incorporated into the CdTe layer when using the Sb-doped CdTe source of 1×1018 cm-3. The observation of surface morphology showed that the grain sizes were improved by Sb addition. Therefore, the improved performance upon Sb addition to CdTe solar cells was probably due to the improvements in crystallinity, such as increased grain size.

  20. Development of megapixel HgCdTe detector arrays with 15 micron cutoff

    Science.gov (United States)

    Forrest, William J.; McMurtry, Craig W.; Dorn, Meghan; Pipher, Judith; Cabrera, Mario S.

    2016-10-01

    I. HistoryHgCdTe is a versatile II-VI semiconductor with a direct-bandgap tunable via the Hg:Cd ratio. Hg:Cd ratio = 53:47 (2.5 micron cutoff) was used on the NICMOS instrument on HST and the 2MASS. Increasing Hg:Cd ratio to 70:30 leads to a 5.4 micron cutoff, utilized in NEOWISE and many JWST instruments. Bailey, Wu et al. (1998) motivated extending this technology to 10 microns and beyond. Bacon, McMurtry et al. (2003, 2004) indicated significant progress toward this longwave (LW) goal.Warm-Spitzer has pioneered passive cooling to below 30 K in space, enabling the JWST mission.II. CurrentNASA's proposed NEOcam mission selected HgCdTe with a 10.6 micron cutoff because it promises natural Zodiacal background limited sensitivity with modest cooling (40 K). Teledyne Imaging Systems (TIS) is producing megapixel arrays with excellent performance (McMurtry, Lee, Dorn et al. (2013)) for this mission.III. FutureModest cooling requirements (circa 30 K) coupled with megapixel arrays and LW sensitivity in the thermal IR make HgCdTe attractive for many infrared instruments. For instance, the spectral signature of a terrestrial planet orbiting in the habitable zone of a nearby star will be the deep and wide absorption by CO_2 centered at 15 microns (Seager and Deming, 2010). LW instruments can enhance Solar System missions, such as exploration of the Enceladus geysers (Spencer, Buratti et al. 2006). Passive cooling will be adequate for these missions. Modern ground-based observatories will benefit from infrared capability out to the N band (7.5-13.6 microns). The required detector temperatures (30-40 K) are easily achievable using commercially available mechanical cryo-coolers (refrigerators).IV. Progress to dateTIS is developing megapixel HgCdTe arrays sensitive out to 15 microns under the direction of the University of Rochester. As a first step, we have produced arrays with a 13 micron cutoff. The initial measurements indicate very promising performance. We will present the

  1. CdTe nano-structures for photovoltaic devices

    OpenAIRE

    Corregidor, V.; Alves, L. C.; FRANCO, N.; Barreiros, Maria Alexandra; Sochinskii, N. V.; Alves, E

    2013-01-01

    CdTe nano-structures with diameter of ∼100 nm and variable length (200–600 nm) were fabricated on glass substrates covered with conductive buffer layers such as NiCr, ZAO (ZnO:Al2O3 + Ta2O5) or TiPd alloys. The fabrication process consisted of the starting vapour deposition of metal catalyst dropped layer followed by the isothermal catalyst-prompted vapour growth of CdTe nano-structured layer of controllable shape and surface filling. The effect of buffer layers on the crystallographic orient...

  2. Optical measurements for excitation of CdTe quantum dots

    Science.gov (United States)

    Vladescu, Marian; Feies, Valentin; Schiopu, Paul; Craciun, Alexandru; Grosu, Neculai; Manea, Adrian

    2016-12-01

    The paper presents the experimental results obtained using a laboratory setup installation for fluorescence excitation of CdTe QDs used as biomarkers for clinical diagnostics. Quantum Dots (QDs) made of Cadmium Telluride (CdTe), are highly fluorescent and they are used as robust biomarkers. Generally, QDs are referred to as the zero-dimensional colloidal crystals that possess strong size dependence and multi-colored luminescence properties. Along with its intrinsic features, such as sharp and symmetric emission, photo-stability and high quantum yields, QDs play a vital role in various applications, namely the identification of the chemical moieties, clinical diagnostics, optoelectronics, bio-imaging and bio-sensing1.

  3. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    OpenAIRE

    Pinheiro,Wagner Anacleto; Falcão, Vivienne Denise; Cruz,Leila Rosa de Oliveira; Ferreira,Carlos Luiz

    2006-01-01

    Unlike other thin film deposition techniques, close spaced sublimation (CSS) requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate) and a sintered C...

  4. (55)Fe X-ray Response of HgCdTe NIR Detector Arrays

    Science.gov (United States)

    Fox, Ori; Rauscher, Bernard J.

    2008-01-01

    Conversion gain is a fundamental parameter in detector characteristics that is used to measure many identifying detector properties, including read noise, dark current, and quantum efficiency (QE). Charge coupling effects, such as inter-pixel capacitance, attenuate photon shot noise and result in an overestimation of of conversion gain when implementing the photon transfer technique. The (55)Fe X-ray technique is a direct and simple method by which to measure the conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by a single X-ray photon. Here we present the calibrated pair production energy for 1.7 micron HgCdTe infrared detectors.

  5. HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

    2017-01-01

    We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

  6. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  7. Thermal stability of substitutional ag in CdTe

    NARCIS (Netherlands)

    Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

    1996-01-01

    The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the channelin

  8. Simulation of charge transport in pixelated CdTe

    Science.gov (United States)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  9. Intracavity CdTe modulators for CO2 lasers.

    Science.gov (United States)

    Kiefer, J. E.; Nussmeier, T. A.; Goodwin, F. E.

    1972-01-01

    The use of cadmium telluride as an electrooptic material for intracavity modulation of CO2 lasers is described. Included are the predicted and measured effects of CdTe intracavity modulators on laser performance. Coupling and frequency modulation are discussed and experimental results compared with theoretically predicted performance for both techniques. Limitations on the frequency response of the two types of modulation are determined.

  10. Thermal stability of substitutional ag in CdTe

    NARCIS (Netherlands)

    Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

    1996-01-01

    The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the channelin

  11. Size controlled preparation of CdTe nanoparticles by apoferritin

    Science.gov (United States)

    Peng, Shasha; Kim, Ji Hyeon; Park, Sang Joon

    2017-06-01

    Cadmium telluride quantum dots (CdTe QDs) were synthesized in the cavity of horse spleen apoferritin and CdTe-apoferritin complex was fluorescent. Apoferritin is a popular bio-template to prepare various nanoparticles with narrow size distribution due to the confinement of the hollow protein shell. In this work, we controlled the diameters of CdTe NPs by changing the reaction conditions. Altering the molar ratio of Cd to Te from 1:0.05 to 1:0.2 and pH can change the diameters of NPs cores. The synthesized QDs were characterized by photoluminescence (PL) spectroscopy, UV-vis spectroscopy and transmission electron microscopy (TEM). The results showed that the PL intensity decreased when the Cd/Te molar ratio was decreased from 1:0.05 to 1:0.3 and pH was increased from 9.01 to 9.96. In addition, it was proven that the existence of apoferritin is necessary for the present synthetic method and the formation of CdTe QDs in the inner cavity of apoferritin.

  12. Catalytic growth of CdTe nanowires by closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Gwangseok; Jung, Younghun [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-11-01

    CdTe nano-/micro-structures with various morphologies were grown by using the closed space sublimation (CSS) method on a sapphire substrate by Au-catalyzed vapor–liquid–solid (VLS) mechanism. Length, diameter, and morphology of the CdTe nano-/micro-structures depended on the growth time and temperature gradient between the substrate and powdered CdTe source. Scanning electron microscopy images showed that an Au catalyst droplet existed at the tips of CdTe nanowires, which confirms that CdTe nanowires were grown by an Au-catalyzed VLS mechanism. Also, we observed that the two-dimensional CdTe film layer initially formed before the growth of the CdTe nano-/micro-wires. The optical and structural properties of CdTe nano-/micro-structures were characterized by X-ray diffraction technique and micro-Raman spectroscopy. Our study demonstrates that diverse CdTe nano-/micro-structures can be fabricated by using Au-catalyzed VLS growth process in a simple CSS chamber by controlling the temperature gradient and growth time. - Highlights: • We demonstrated CdTe nanowires using closed space sublimation method. • Au-catalyst droplets at the tips confirmed vapor–liquid–solid mechanism. • Diameters and lengths increased with increasing temperature gradient and time.

  13. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  14. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    Science.gov (United States)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  15. Characterization of HgCdTe and HgCdSe Materials for Third Generation Infrared Detectors

    Science.gov (United States)

    2011-12-01

    etched HgCdTe photodiode .................................. 13 1.6 (a) Hybrid IR FPA, (b) cross section of structure, (c) indium bumps on Si...to areas of approximately 30 cm2. At this size, the wafers used for growth are unable to accommodate more than two 1024 × 1024 FPAs.3 For more...clear advantages over the other substrates because of its low cost, large wafer size, and a thermal-expansion coefficient that perfectly matches

  16. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    Science.gov (United States)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  17. Proton irradiation results for long-wave HgCdTe infrared detector arrays for Near-Earth Object Camera

    Science.gov (United States)

    Dorn, Meghan L.; Pipher, Judith L.; McMurtry, Craig; Hartman, Spencer; Mainzer, Amy; McKelvey, Mark; McMurray, Robert; Chevara, David; Rosser, Joshua

    2016-07-01

    HgCdTe detector arrays with a cutoff wavelength of ˜10 μm intended for the Near-Earth Object Camera (NEOCam) space mission were subjected to proton-beam irradiation at the University of California Davis Crocker Nuclear Laboratory. Three arrays were tested-one with 800-μm substrate intact, one with 30-μm substrate, and one completely substrate-removed. The CdZnTe substrate, on which the HgCdTe detector is grown, has been shown to produce luminescence in shorter wave HgCdTe arrays that causes an elevated signal in nonhit pixels when subjected to proton irradiation. This testing was conducted to ascertain whether or not full substrate removal is necessary. At the dark level of the dewar, we detect no luminescence in nonhit pixels during proton testing for both the substrate-removed detector array and the array with 30-μm substrate. The detector array with full 800-μm substrate exhibited substantial photocurrent for a flux of 103 protons/cm2 s at a beam energy of 18.1 MeV (˜750 e-/s) and 34.4 MeV (˜65 e-/s). For the integrated space-like ambient proton flux level measured by the Spitzer Space Telescope, the luminescence would be well below the NEOCam dark current requirement of <200 e-/s, but the pattern of luminescence could be problematic, possibly complicating calibration.

  18. Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers

    Science.gov (United States)

    Carmody, M.; Lee, D.; Zandian, M.; Phillips, J.; Arias, J.

    2003-07-01

    Lattice mismatch between the substrate and the absorber layer in single-color HgCdTe infrared (IR) detectors and between band 1 and band 2 in two-color detectors results in the formation of crosshatch lines on the surface and an array of misfit dislocations at the epi-interfaces. Threading dislocations originating in the substrate can also bend into the interface plane and result in misfit dislocations because of the lattice mismatch. The existence of dislocations threading through the junction region of HgCdTe IR-photovoltaic detectors can greatly affect device performance. High-quality CdZnTe substrates and controlled molecular-beam epitaxy (MBE) growth of HgCdTe can result in very low threading-dislocation densities as measured by the etch-pit density (EPD ˜ 104cm-2). However, dislocation gettering to regions of high stress (such as etched holes, voids, and implanted-junction regions) at elevated-processing temperatures can result in a high density of dislocations in the junction region that can greatly reduce detector performance. We have performed experiments to determine if the dislocations that getter to these regions of high stress are misfit dislocations at the substrate/absorber interface that have a threading component extending to the upper surface of the epilayer, or if the dislocations originate at the cap/absorber interface as misfit dislocations. The preceding mechanisms for dislocation motion are discussed in detail, and the possible diode-performance consequences are explored.

  19. Feasibility of Open Tube Slider Growth of HgCdTe from Te-Rich Solution.

    Science.gov (United States)

    1980-02-01

    od of Equation (26), which assumes CdTe and HgTe molecules are dissolved in Te and that the solution is 3.2 percent less dense than the solid...finished slice is protected with a layer of beeswax and diced to the size of our slider system, either I 1Xlcm 2 or 2X3cm2 . Just before use, the...h time allowed for the solute to dissolve at 770’C produces ent with the annealing studies of Schrnt and Stelzer 1211 on 55 ’- IKIKE TRANSACTIONS ON

  20. CdTe microwire-based ultraviolet photodetectors aligned by a non-uniform electric field

    Science.gov (United States)

    Park, Hyunik; Yang, Gwangseok; Chun, Seungju; Kim, Donghwan; Kim, Jihyun

    2013-07-01

    We report on ultraviolet (UV) photodetectors fabricated by positioning Cadmium Telluride (CdTe) microwires (μWs) precisely by dielectrophoretic (DEP) force, where CdTe μWs were grown using an Au-catalyst-assisted closed-space-sublimation (CSS) method. The optical properties of CSS-grown CdTe μWs were characterized by micro-photoluminescence and micro-Raman spectroscopies. Optoelectronic characteristics were obtained after CdTe μWs were aligned on a pre-patterned SiO2/Si substrate by a non-uniform electric field. Photocurrents were increased with increasing the light intensities. Fast and reliable photoresponse and recovery were observed when CdTe μWs were exposed to UV illuminations. We demonstrated that high quality CdTe μWs grown by the CSS method have significant potentials as optoelectronic devices.

  1. Characterization of CdTe films deposited at various bath temperatures and concentrations using electrophoretic deposition.

    Science.gov (United States)

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  2. Fabrication of CdTe quantum dots-apoferritin arrays for detection of dopamine

    Science.gov (United States)

    Le, Thi Hoa; Kim, Ji Hyeon; Park, Sang Joon

    2017-06-01

    A method was proposed for detecting dopamine using a two-dimensional CdTe quantum dots (QDs)-apoferritin array fabricated on a modified silicon (Si) surface. First, CdTe QDs were synthesized in the cavity of horse spleen apoferritin (HsAFr). Then, the characterization of CdTe QDs in apoferritin was performed using photoluminescence (PL) spectroscopy. Transmission electron microscopy was used to analyze the size and structure of CdTe QDs. An atomic force microscopy image was obtained to evaluate the topography of the Si surface. In addition, the PL change resulting from the conjugation reaction of the CdTe QDs-apoferritin array with dopamine was investigated. When the array was linked to dopamine, a significant quenching of fluorescence was observed. Accordingly, the CdTe QDs-apoferritin arrays could be employed as useful sensing media for dopamine detection.

  3. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Yin, Wan-Jian [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); College of Physics, Optoelectronics and Energy and Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Beijing Computational Science Research Center, Beijing 100094 (China)

    2016-01-28

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  4. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  5. Luminescence effects of ion-beam bombardment of CdTe surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Olvera, J., E-mail: javier.olvera@uam.e [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Plaza, J.L.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2009-09-15

    In the present work, we report the effect of low-energy ion bombardment on CdTe surfaces. The effect is revealed by FESEM images and photoluminescence (PL) measurements carried out before and after irradiation of CdTe polycrystals by means of an ion-beam sputtering (IBS) system. An important improvement in the luminescence of CdTe was observed in the irradiated areas, related to defect-free surfaces.

  6. Receiver Performance of CO2 and CH4 Lidar with Low Noise HgCdTe Avalanche Photodiodes

    Science.gov (United States)

    Sun, X.; Abshire, J. B.

    2012-12-01

    NASA Goddard Space Flight Center (GSFC) is currently developing CO2 lidars at 1.57 μm wavelength for the Active Sensing of CO2 Emission over Days, Nights, and Seasons (ASCENDS) mission. One of the major technical challenges is the photodetectors that have to operate in short wave infrared (SWIR) wavelength region and sensitive to received laser pulses of only a few photons. We have been using InGaAs photocathode photomultiplier tubes (PMT) in our airborne simulator of the CO2 lidar that can detect single photon with up to 10% quantum efficiency at photodetector for our CO2 lidars. The new HgCdTe APDs have typically a >50% quantum efficiency, including the effect of fill-factor, from 0.9 to 4.5 μm wavelength. DRS RSTA will integrate a low noise read-out integrated circuit (ROIC) with the HgCdTe APD array into a low noise analog SWIR detector with near single photon sensitivity. The new HgCdTe APD SWIR detector assembly is expected to improve the receiver sensitivity of our CO2 lidar by at least a factor of two and provide a sufficient wide signal dynamic range. The new SWIR detector systems can also be used in the CH4 lidars at 1.65 μm wavelength currently being developed at GSFC. The near infrared PMTs have diminishing quantum efficiency as the wavelength exceeds 1.6 μm. InGaAs APDs have a high quantum efficiency but too high an excess noise factor to achieve near quantum limited performance. The new HgCdTe APDs is expected to give a much superior performance than the PMTs and the InGaAs APDs. In this paper, we will give a brief description of the new HgCdTe APD assembly and present a receiver performance analysis of our CO2 lidar and a CH4 lidar with the new detector system in comparison to the near infrared PMTs and InGaAs APDs.

  7. Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T. A.

    2008-09-01

    CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

  8. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Huizhen [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Ma, Jinwen [College of New Energy, Bohai University, Jinzhou, Liaoning 121013 (China); Mu, Yannan [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Department of Physics and Chemistry, Heihe University, Heihe 164300 (China); Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Yang, Haibin, E-mail: yanghb@jlu.edu.cn [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China)

    2015-06-15

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm{sup 2}, which is higher than that of samples prepared at other temperatures. Furthermore, CdCl{sub 2} treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl{sub 2} treatment improved to 2.97 mA/cm{sup 2}, indicating a potential application in photovoltaic devices.

  9. Photoluminescence and Electroluminescence Properties of CdTe Nanoparticles in Conjugated Polymer Hosts

    Institute of Scientific and Technical Information of China (English)

    GUO, Fengqi; XIE, Puhui

    2009-01-01

    The photoinduced energy transfer process from conjugated polymer (PPE4+) to CdTe nanocrystals was found both in solutions and in thin films by a fluorescence spectroscopic technique. Films of PPE4+ blended with CdTe-2 nanocrystals were formed by an electrostatic layer-by-layer assembly technique. Light emitting diodes were fabricated using CdTe-2 as an emitter in PPE4+ host. PPE4+ works as a molecular wire in the energy transfer process from the polymer to the CdTe-2 nanocrystals.

  10. Effects of CdTe growth conditions and techniques on the efficiency limiting defects and mechanisms in CdTe solar cells

    Science.gov (United States)

    Rohatgi, A.; Chou, H. C.; Jokerst, N. M.; Thomas, E. W.; Ferekides, C.; Kamra, S.; Feng, Z. C.; Dugan, K. M.

    1996-01-01

    CdTe solar cells were fabricated by depositing CdTe films on CdS/SnO2/glass substrates using close-spaced sublimation (CSS) and metalorganic chemical vapor deposition (MOCVD). Te/Cd mole ratio was varied in the range of 0.02 to 6 in the MOCVD growth ambient in an attempt to vary the native defect concentration. Polycrystalline CdTe layers grown by MOCVD and CSS both showed average grain size of about 2 μm. However, the CdTe films grown by CSS were found to be less faceted and more dense compared to the CdTe grown by MOCVD. CdTe growth techniques and conditions had a significant impact on the electrical characteristics of the cells. The CdTe solar cells grown by MOCVD in the Te-rich growth condition and by the CSS technique gave high cell efficiencies of 11.5% and 12.4%, respectively, compared to 6.6% efficient MOCVD cells grown in Cd-rich conditions. This large difference in efficiency is explained on the basis of (a) XRD measurements which showed a higher degree of atomic interdiffusion at the CdS/CdTe interface in high performance devices, (b) Raman measurements which endorsed more uniform and preferred grain orientation by revealing a sharp CdTe TO mode in the high efficiency cells, and (c) carrier transport mechanism which switched from tunneling/interface recombination to depletion region recombination in the high efficiency cells. In this study, Cu/Au layers were evaporated on CdTe for the back contact. Lower efficiency of the Te-rich MOCVD cells, compared to the CSS cells, was attributed to contact related additional loss mechanisms, such as Cd pile-up near Cu/CdTe interface which can give rise to Cd-vacancy defects in the bulk, and higher Cu concentration in the CdTe layer which can cause shunts in the device. Finally, SIMS measurements on the CdTe films of different crystallinity and grain size confirmed that grain boundaries are the main conduits for Cu migration into the CdTe film. Thus larger CdTe grain size or lower grain boundary area per unit volume

  11. High-Operating Temperature HgCdTe: A Vision for the Near Future

    Science.gov (United States)

    Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

    2016-09-01

    We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the

  12. Multi-color IRFPAs made from HgCdTe grown by MOVPE

    Science.gov (United States)

    Jones, C. L.; Hipwood, L. G.; Price, J.; Shaw, C. J.; Abbott, P.; Maxey, C. D.; Lau, H. W.; Catchpole, R. A.; Ordish, M.; Knowles, P.; Gordon, N. T.

    2007-04-01

    The drive towards improved target recognition has led to an increasing interest in detection in more than one infrared band. This paper describes the design, fabrication and performance of two-colour and three-colour infrared detectors made from HgCdTe grown by Metal Organic Vapour Phase Epitaxy (MOVPE). The detectors are staring, focal plane arrays consisting of HgCdTe mesa-diode arrays bump bonded to silicon read-out integrated circuits (ROICs). Each mesa diode has one connection to the ROIC and the colours are selected by varying the applied bias. Results will be presented for both two-colour and three-colour devices. In a two-colour n-p-n design the cut-off wavelengths are defined by the compositions of the two n-type absorbers and the doping and composition of the p-type layer are chosen to prevent transistor action. The bias polarity is used to switch the output between colours. This design has been used to make MW/LW detectors with a MW band covering 3 to 5 μm and a LW band covering 5 to 10 μm. In a three-colour n-p-n design the cut-off wavelengths are defined by the compositions of the two n-type absorbers and the p-type absorber, which has an intermediate cut-off wavelength. The absorbers are separated from each other by electronic barriers consisting of wide band-gap material. At low applied bias these barriers prevent photo-electrons generated in the p-type absorber from escaping and the device then gives an output from one of the n-type absorbers. At high applied bias the electronic barrier is pulled down and the device gives an output from both the p-type absorber and one of the n-type absorbers. Thus by varying the polarity and magnitude of the bias it is possible to obtain three-colours from a two-terminal device. This design has been used to make a SW/MW/MW detector with cut-off wavelengths of approximately 3, 4 and 6 μm.

  13. Optical properties of CdTe: Experiment and modeling

    Science.gov (United States)

    Adachi, Sadao; Kimura, Toshifumi; Suzuki, Norihiro

    1993-09-01

    The real epsilon(sub 1) and imaginary epsilon(sub 2) portions of the dielectric function of CdTe were measured by spectroscopic ellipsometry (SE) in the 1.1-5.6 eV photon-energy range at room temperature. The data obtained were analyzed using different theoretical models, namely the harmonic-oscillator approximation, the standard critical point, and the model dielectric function. These models include the E(sub 0), E(sub 0) + Delta(sub 0), E(sub 1), E(sub 1) + Delta(sub 1), and E(sub 2) gaps as the main dispersion mechanisms. The consequences were reported and of particular interest was the difference in the analyzed results between these theoretical models. Dielectric-related optical constants of CdTe, such as the complex refractive index, the absorption coefficient, and normal-incidence reflectivity, were also investigated.

  14. An NMR quantum computer of the semiconductor CdTe

    Science.gov (United States)

    Shimizu, T.; Goto, A.; Hashi, K.; Ohki, S.

    2002-12-01

    We propose a method to implement a quantum computer by solid-state NMR. We can use the J-coupling for the quantum gate in CdTe. Both Cd and Te have two isotopes with spin 1/2, then we can have 4-qubits. The decoherence by dipole interaction may be minimized by preparing the isotope superlattice grown in the order of— 111Cd- 123Te- 113Cd- 125Te—in the [111] direction and by applying the magnetic field in the direction of [100], the magic angle of the dipole interaction. The optical pumping technique can be used in CdTe to make the initialization of the qubits.

  15. Dependence of CdTe response of bias history

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R.; Sasala, R.A.; Eisgruber, I.L. [Colorado State Univ., Boulder, CO (United States)

    1995-11-01

    Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependent effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.

  16. Digital pulse-shape processing for CdTe detectors

    CERN Document Server

    Bargholtz, C; Maartensson, L; Wachtmeister, S

    2001-01-01

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  17. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  18. Photoluminescence study of Cu diffusion in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Grecu, D.; Compaan, A.D. [Department of Physics, University of Toledo, Toledo, Ohio (United States)

    1999-03-01

    We report changes in the photoluminescence spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. Films grown by vapor transport deposition and radio-frequency sputtering as well as single crystal CdTe were included in the study. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy broad-band transition. The PL is subsequently used to explore the effects of electric fields on Cu diffusion. The role of Te as a diffusion barrier for Cu is investigated. {copyright} {ital 1999 American Institute of Physics.}

  19. Stepwise cooling technique as a method of growing high-perfection Cl-compensated CdTe

    Science.gov (United States)

    Pavlyuk, M. D.; Subbotin, I. A.; Kanevsky, V. M.; Artemov, V. V.

    2017-01-01

    High-perfection crystals of Cl-compensated CdTe have been grown by the Obreimov-Shubnikov technique using a schedule of stepwise crystal cooling developed with due regard for the correct CdTe phase diagram.

  20. Simulation of charge transport in pixelated CdTe

    OpenAIRE

    Kolstein, M.; G Ariño; Chmeissani, M.; De Lorenzo, G.

    2014-01-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have op...

  1. Optical modeling of graphene contacted CdTe solar cells

    Science.gov (United States)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  2. CdTe Nanowires studied by Transient Absorption Microscopy

    Directory of Open Access Journals (Sweden)

    Kuno M.

    2013-03-01

    Full Text Available Transient absorption measurements were performed on single CdTe nanowires. The traces show fast decays that were assigned to charge carrier trapping at surface states. The observed power dependence suggests the existence of a trap-filling mechanism. Acoustic phonon modes were also observed, which were assigned to breathing modes of the nanowires. Both the fundamental breathing mode and the first overtone were observed, and the dephasing times provide information about how the nanowires interact with their environment.

  3. Optimizing timing performance of CdTe detectors for PET

    Science.gov (United States)

    Nakhostin, M.

    2017-10-01

    Despite several attractive properties, the poor timing performance of compound semiconductor detectors such as CdTe and CdZnTe has hindered their use in commercial PET imaging systems. The standard method of pulse timing with such detectors is to employ a constant-fraction discriminator at the output of a timing filter which is fed by the pulses from a charge-sensitive preamplifier. The method has led to a time resolution of about 10 ns at full-width at half-maximum (FWHM) with 1 mm thick CdTe detectors. This paper presents a detailed investigation on the parameters limiting the timing performance of Ohmic contact planar CdTe detectors with the standard pulse timing method. The jitter and time-walk errors are studied through simulation and experimental measurements and it is revealed that the best timing results obtained with the standard timing method suffer from a significant loss of coincidence events (~50%). In order to improve the performance of the detectors with full detection efficiency, a new digital pulse timing method based on a simple pattern recognition technique was developed. A time resolution of 3.29  ±  0.10 ns (FWHM) in the energy range of 300–650 keV was achieved with an Ohmic contact planar CdTe detector (5  ×  5  ×  1 mm3). The digital pulse processing method was also used to correct for the charge-trapping effect and an improvement in the energy resolution from 4.83  ±  0.66% to 2.780  ±  0.002% (FWHM) at 511 keV was achieved. Further improvement of time resolution through a moderate cooling of the detector and the application of the method to other detector structures are also discussed.

  4. High efficiency CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Marinskiy, D.; Viswanathan, V.; Tetali, B.; Palekis, V.; Selvaraj, P.; Morel, D.L. [University of South Florida, Tampa, FL (United States). Dept. of Electrical Engineering

    2000-02-21

    Cadmium telluride (CdTe) has long been recognized as a strong candidate for thin film solar cell applications. It has a bandgap of 1.45 eV, which is nearly ideal for photovoltaic energy conversion. Due to its high optical absorption coefficient essentially all incident radiation with energy above its band-gap is absorbed within 1-2 {mu}m from the surface. Thin film CdTe solar cells are typically heterojunctions, with cadmium sulfide (CdS) being the n-type junction partner. Small area efficiencies have reached the 16.0% level and considerable efforts are underway to commercialize this technology. This paper will present work carried out at the University South Florida sponsored by the National Renewable Energy Laboratory of the United States Department of Energy, on CdTe/CdS solar cells fabricated using the close spaced sublimation (CSS) process. The CSS technology has attractive features for large area applications such as high deposition rates and efficient material utilization. The structural and optical properties of CSS CdTe and CdS films and junctions will be presented and the influence of some important CSS process parameters will be discussed. (orig.)

  5. Manufacturing of CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bonnet, D. [ANTEC Solar GmbH, Rudisleben (Germany)

    2000-02-21

    Due to its basic physical and chemical properties CdTe has become a favoured base material for thin film solar cells, using robust, high-throughput manufacturing procedures. The technology shows significant potential for attaining cost levels of <0.5 Euro/W{sub p}. Close-spaced sublimation (CSS) is the fastest and simplest deposition process for both semiconductors used, CdTe and CdS, permitting in-line production at a high linear speed of about 1 m/min. The individual manufacturing steps for integrated modules are explained in view of their incorporation into the production line. ANTEC solar GmbH is engaged to enter the production of CdTe thin film modules on a scale of 10 MW{sub p} (100000 m{sup 2}) per annum, using CSS as the deposition procedure for the semiconductor films, and high-rate in-line sputtering for transparent and opaque contacts. Standard module size will be 60 x 120 cm{sup 2}. The production line is presently under construction. (orig.)

  6. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  7. A New nBn IR Detection Concept Using HgCdTe Material

    Science.gov (United States)

    Gravrand, O.; Boulard, F.; Ferron, A.; Ballet, Ph.; Hassis, W.

    2015-09-01

    This paper presents a new HgCdTe-based heterostructure to perform quantum infrared detection. The structure is based on the unipolar barrier concept, introduced by White in the 1980s for HgCdTe. The driving concept is the use of a large gap barrier layer to impede the flow of majority carriers (electrons on the conduction band in the case of n-type material) while facilitating the transport of minority (photo) carriers (holes on the valence band). The issue encountered here is the formation of a small potential barrier on the valence band, blocking photocarriers and therefore killing the quantum efficiency. The idea is to optimize the structure with an asymmetric barrier: abrupt on the contact side to efficiently block the majority carriers, and gradual on the absorption layer side to plane down the remaining potential barrier for the collected photocarriers. The concept has been studied by finite element modeling simulation and showed promising results. An optimal design has been identified in the middle wave band and molecular beam epitaxy layers have been grown then processed. First experimental characterization of the electro-optical properties of such structures showed promising features: 60% quantum efficiency and low turn-on voltage have been measured on single pixels.

  8. Two-color HgCdTe infrared staring focal plane arrays

    Science.gov (United States)

    Smith, Edward P.; Pham, Le T.; Venzor, Gregory M.; Norton, Elyse; Newton, Michael; Goetz, Paul; Randall, Valerie; Pierce, Gregory; Patten, Elizabeth A.; Coussa, Raymond A.; Kosai, Ken; Radford, William A.; Edwards, John; Johnson, Scott M.; Baur, Stefan T.; Roth, John A.; Nosho, Brett; Jensen, John E.; Longshore, Randolph E.

    2003-12-01

    Raytheon Vision Systems (RVS) in collaboration with HRL Laboratories is contributing to the maturation and manufacturing readiness of third-generation two-color HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from the routine growth and fabrication of 256x256 30μm unit-cell staring FPAs that provide dual-color detection in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral regions. FPAs configured for MWIR/MWIR, MWIR/LWIR and LWIR/LWIR detection are used for target identification, signature recognition and clutter rejection in a wide variety of space and ground-based applications. Optimized triple-layer-heterojunction (TLHJ) device designs and molecular beam epitaxy (MBE) growth using in-situ controls has contributed to individual bands in all two-color FPA configurations exhibiting high operability (>99%) and both performance and FPA functionality comparable to state-of-the-art single-color technology. The measured spectral cross talk from out-of-band radiation for either band is also typically less than 10%. An FPA architecture based on a single mesa, single indium bump, and sequential mode operation leverages current single-color processes in production while also providing compatibility with existing second-generation technologies.

  9. HOT MWIR HgCdTe performance on CZT and alternative substrates

    Science.gov (United States)

    Pellegrino, Joseph G.; DeWames, Roger; Perconti, Philip; Billman, Curtis; Maloney, Patrick

    2012-06-01

    Mid wave infrared (MWIR) imaging in the 3-5 um spectral band has traditionally been performed by InSb sensors. InSb technology is presently limited to a near 80K operating temperature and the hunt has been on for a higher operating temperature (HOT) technology that does as well at 150K as InSb at 80K, but with reduced power requirements. Amongst these alternative technologies are photovoltaic sensors consisting of heterostructures of HgCdTe (MCT). In previous work we assessed the device performance of several alternative MWIR HOT technologies (MCT on Si, MCT on GaAs) as a function of operating temperature. In this work we compare the NEDT histograms for these alternative technologies with InSb to better understand how their performance can be improved at higher temperatures. We also present analysis formalism for quantitatively assessing the number of FPA pixels which reside in the central versus the shoulder portions of the histogram.Begin the Introduction two lines below the Keywords. The manuscript should not have headers, footers, or page numbers. It should be in a onecolumn format. References are often noted in the text1 and cited at the end of the paper.

  10. Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

    Science.gov (United States)

    Cervera, C.; Boulade, O.; Gravrand, O.; Lobre, C.; Guellec, F.; Sanson, E.; Ballet, P.; Santailler, J. L.; Moreau, V.; Zanatta, J. P.; Fieque, B.; Castelein, P.

    2016-09-01

    This paper presents recent developments at Commissariat à l'Energie atomique, Laboratoire d'Electronique et de Technologie de l'Information infrared laboratory on processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in short-wave infrared (SWIR) spectral band for the astrophysics applications. These FPAs have been grown using both liquid phase epitaxy and molecular beam epitaxy on a lattice-matched CdZnTe substrate. This technology exhibits lower dark current and lower series resistance in comparison with n-on-p vacancy-doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in long-wave infrared and very-long-wave infrared spectral bands with cut-off wavelengths from 10 μm up to 17 μm at 78 K and is now evaluated for the SWIR range. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy and liquid phase epitaxy have been investigated. Electro-optical characterizations have been performed on individual photodiodes from test arrays, whereas dark current investigation has been performed with a fully functional readout integrated circuit dedicated to low flux operations.

  11. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    Science.gov (United States)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  12. Temperature-dependent photoluminescence of highly luminescent water-soluble CdTe quantum dots

    Institute of Scientific and Technical Information of China (English)

    Ji Wei Liu; Yu Zhang; Cun Wang Ge; Yong Long Jin; Sun Ling Hu; Ning Gu

    2009-01-01

    Highly luminescent water-soluble CdTe quantum dots (QDs) have been synthesized with an electrogenerated precursor. The obtained CdTe QDs can possess good crystallizability, high quantum yield (QY) and favorable stability. Furthermore, a detection system is designed firstly for the investigation of the temperature-dependent PL of the QDs.

  13. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  14. Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition

    Science.gov (United States)

    Soshnikov, I. P.; Semenov, A. A.; Belyavskii, P. Yu.; Shtrom, I. V.; Kotlyar, K. P.; Lysak, V. V.; Kudryashov, D. A.; Pavlov, S. I.; Nashchekin, A. V.; Cirlin, G. E.

    2016-12-01

    We report the possibility of autocatalytic synthesis of highly crystalline perfect CdTe nanowires by magnetron presputtering deposition through the windows in ultrathin layers of SiO2. The photoluminescence spectra of obtained CdTe nanowires exhibit an emission band in the 1.4-1.7 eV region, indicating crystalline perfection of the nanowires.

  15. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  16. NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

    Energy Technology Data Exchange (ETDEWEB)

    2016-05-01

    NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costs less than fossil fuels.

  17. Single CdTe microwire photodetectors grown by close-spaced sublimation method.

    Science.gov (United States)

    Yang, Gwangseok; Kim, Byung-Jae; Kim, Donghwan; Kim, Jihyun

    2014-08-11

    We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10(-3) cm2 V(-1) s(-1). Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.

  18. Electrodeposition, characterization and photo electrochemical properties of CdSe and CdTe

    Directory of Open Access Journals (Sweden)

    Atef Y. Shenouda

    2015-03-01

    Full Text Available CdSe and CdTe are electrodeposited using 0.1 M Cd2+ and different ion concentrations of Se and Te. The effect of the temperature on the electrodeposition process is also studied. The crystal structure of the deposited CdSe and CdTe is investigated by X-ray diffraction (XRD. Scanning electron microscopy (SEM of samples deposited at optimized parameters reveals that CdSe has spongy spherical grains while CdTe has coralloid morphology. Optical absorption shows the presence of direct transition with band gap energy 1.96 and 1.51 eV for CdSe and CdTe, respectively. The highest photo-conversion efficiencies of electrodeposited CdSe and CdTe films per unit area are 6% and 9.6%, respectively that achieved under simple laboratory conditions.

  19. Visible response of λc=2.5´m HgCdTe HDVIP detectors

    Science.gov (United States)

    Stapelbroek, Maryn G.; Guptill, Matthew; D'Souza, Arvind I.; Bryan, Elizabeth R.; Beck, J. D.; Kinch, M. A.; Robinson, James E.

    2004-08-01

    Cu-doped HDVIP detectors with different cut-off wavelengths are routinely manufactured. The DRS HDVIP detector technology is a front-side-illuminated detector technology. There is no substrate to absorb the visible photons as in backside-illuminated detectors and these detectors should be well suited to respond to visible light. However, HDVIP detectors are passivated using CdTe that absorbs the visible light photons. CdTe strongly absorbs photons of wavelength shorter than about 800 nm. Detectors with varying thickness of CdTe passivation layers were fabricated to investigate the visible response of the 2.5-μm-cutoff detectors. A model was developed to predict the quantum efficiency of the detectors in the near infrared and visible wavelength regions as a function of CdTe thickness. Individual photodiodes (λc = 2.5 μm) in test bars were examined. Measurements of the quantum efficiency as a function of wavelength region will be presented and compared to the model predictions.

  20. Performances of a HGCDTE APD Based Detector with Electric Cooling for 2-μm DIAL/IPDA Applications

    Science.gov (United States)

    Dumas, A.; Rothman, J.; Gibert, F.; Lasfargues, G.; Zanatta, J.-P.; Edouart, D.

    2016-06-01

    In this work we report on design and testing of an HgCdTe Avalanche Photodiode (APD) detector assembly for lidar applications in the Short Wavelength Infrared Region (SWIR : 1,5 - 2 μm). This detector consists in a set of diodes set in parallel -making a 200 μm large sensitive area- and connected to a custom high gain TransImpedance Amplifier (TIA). A commercial four stages Peltier cooler is used to reach an operating temperature of 185K. Crucial performances for lidar use are investigated : linearity, dynamic range, spatial homogeneity, noise and resistance to intense illumination.

  1. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Western Australia 6009 (Australia)

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  2. HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

    Science.gov (United States)

    Gravrand, O.; Rothman, J.; Cervera, C.; Baier, N.; Lobre, C.; Zanatta, J. P.; Boulade, O.; Moreau, V.; Fieque, B.

    2016-09-01

    HgCdTe (MCT) is a very versatile material system for infrared (IR) detection, suitable for high performance detection in a wide range of applications and spectral ranges. Indeed, the ability to tailor the cutoff frequency as close as possible to the needs makes it a perfect candidate for high performance detection. Moreover, the high quality material available today, grown either by molecular beam epitaxy or liquid phase epitaxy, allows for very low dark currents at low temperatures, suitable for low flux detection applications such as science imaging. MCT has also demonstrated robustness to the aggressive environment of space and faces, therefore, a large demand for space applications. A satellite may stare at the earth, in which case detection usually involves a lot of photons, called a high flux scenario. Alternatively, a satellite may stare at outer space for science purposes, in which case the detected photon number is very low, leading to low flux scenarios. This latter case induces very strong constraints onto the detector: low dark current, low noise, (very) large focal plane arrays. The classical structure used to fulfill those requirements are usually p/ n MCT photodiodes. This type of structure has been deeply investigated in our laboratory for different spectral bands, in collaboration with the CEA Astrophysics lab. However, another alternative may also be investigated with low excess noise: MCT n/ p avalanche photodiodes (APD). This paper reviews the latest achievements obtained on this matter at DEFIR (LETI and Sofradir common laboratory) from the short wave infrared (SWIR) band detection for classical astronomical needs, to long wave infrared (LWIR) band for exoplanet transit spectroscopy, up to very long wave infrared (VLWIR) bands. The different available diode architectures ( n/ p VHg or p/ n, or even APDs) are reviewed, including different available ROIC architectures for low flux detection.

  3. Degradation and capacitance: voltage hysteresis in CdTe devices

    Science.gov (United States)

    Albin, D. S.; Dhere, R. G.; Glynn, S. C.; del Cueto, J. A.; Metzger, W. K.

    2009-08-01

    CdS/CdTe photovoltaic solar cells were made on two different transparent conducting oxide (TCO) structures in order to identify differences in fabrication, performance, and reliability. In one set of cells, chemical vapor deposition (CVD) was used to deposit a bi-layer TCO on Corning 7059 borosilicate glass consisting of a F-doped, conductive tin-oxide (cSnO2) layer capped by an insulating (undoped), buffer (iSnO2) layer. In the other set, a more advanced bi-layer structure consisting of sputtered cadmium stannate (Cd2SnO4; CTO) as the conducting layer and zinc stannate (Zn2SnO4; ZTO) as the buffer layer was used. CTO/ZTO substrates yielded higher performance devices however performance uniformity was worse due to possible strain effects associated with TCO layer fabrication. Cells using the SnO2-based structure were only slightly lower in performance, but exhibited considerably greater performance uniformity. When subjected to accelerated lifetime testing (ALT) at 85 - 100 °C under 1-sun illumination and open-circuit bias, more degradation was observed in CdTe cells deposited on the CTO/ZTO substrates. Considerable C-V hysteresis, defined as the depletion width difference between reverse and forward direction scans, was observed in all Cu-doped CdTe cells. These same effects can also be observed in thin-film modules. Hysteresis was observed to increase with increasing stress and degradation. The mechanism for hysteresis is discussed in terms of both an ionic-drift model and one involving majority carrier emission in the space-charge region (SCR). The increased generation of hysteresis observed in CdTe cells deposited on CTO/ZTO substrates suggests potential decomposition of these latter oxides when subjected to stress testing.

  4. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  5. The strange diffusivity of Ag atoms in CdTe

    CERN Document Server

    Wolf, H; Ostheimer, V; Schachtrup, A R; Stolwijk, N A; Wichert, T

    2001-01-01

    The diffusion of Ag atoms in CdTe was investigated using the radiotracer $^{111}\\!$Ag, which was introduced by implantation with an energy of 60 or 80 keV. The measured diffusion profiles are explained by assuming the existence of a repulsive interaction between Ag and residual Cu atoms causing a drift of the Ag atoms towards the centre of the crystal, which supposes the diffusion in a concentration gradient. This effect vanishes if the Ag concentration is increased and becomes more pronounced if the crystals are simultaneously co- doped with Cu. (11 refs).

  6. Studies on a novel mask technique with high selectivity and aspect-ratio patterns for HgCdTe trenches ICP etching

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Li, Y.; Huang, J.; Yin, W. T.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2012-06-01

    A novel mask technique, combining high selectivity silicon dioxide patterns over high aspect-ratio photoresist (PR) patterns has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal plane arrays (IRFPAs). High-density silicon dioxide film covering high aspect-ratio PR patterns was deposited at the temperature of 80°C and silicon dioxide film patterns over high aspect-ratio PR patterns of HgCdTe etching samples was developed by standard photolithography and wet chemical etch. Scanning electron microscopy (SEM) shows that the surfaces of inductively coupled plasma (ICP) etched samples are quite clean and smooth. The etching selectivity between the novel mask and HgCdTe of the samples is increased to above 32: 1 while the side-wall impact of etching plasma is suppressed by the high aspect ratio patterns. These results show that the combined patterning of silicon dioxide film and thick PR film is a readily available and promising masking technique for HgCdTe mesa etching.

  7. Raman characterization of a new Te-rich binary compound: CdTe2.

    Science.gov (United States)

    Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

    2009-04-02

    Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te.

  8. Effects of Various RF Powers on CdTe Thin Film Growth Using RF Magnetron Sputtering

    Science.gov (United States)

    Alibakhshi, Mohammad; Ghorannevis, Zohreh

    2016-09-01

    Cadmium telluride (CdTe) film was deposited using the magnetron sputtering system onto a glass substrate at various deposition times and radio frequency (RF) powers. Ar gas was used to generate plasma to sputter the CdTe atoms from CdTe target. Effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD) analysis showed that the films exhibited polycrystalline nature of CdTe structure with the (111) orientation as the most prominent peak. Optimum condition to grow the CdTe film was obtained and it was found that increasing the deposition time and RF power increases the crystallinity of the films. From the profilometer and XRD data's, the thicknesses and crystal sizes of the CdTe films increased at the higher RF power and the longer deposition time, which results in affecting the band gap as well. From atomic force microscopy (AFM) analysis we found that roughnesses of the films depend on the deposition time and is independent of the RF power.

  9. Highly luminescent hybrid SiO2-coated CdTe quantum dots: synthesis and properties.

    Science.gov (United States)

    Liu, Ning; Yang, Ping

    2013-01-01

    Novel hybrid SiO2-coated CdTe quantum dots (QDs) were created using CdTe QDs coated with a hybrid SiO2 shell containing Cd(2+) ions and a sulfur source via a sol-gel process in aqueous solution. Aqueous CdTe QDs with tunable emitting color created through a reaction between cadmium chloride and sodium hydrogen telluride was used as cores for the preparation of hybrid SiO2-coated CdTe QDs. In our experiments we found that the surface state of the cores and preparation conditions that affect the formation of the hybrid SiO2 shell also greatly affect photoluminescence of the hybrid SiO2-coated CdTe QDs. The generation of CdS-like clusters in the vicinity of the CdTe QDs, caused the quantum size effect of the QDs to be greatly reduced, which changes photoluminescence properties of the hybrid QDs fundamentally. Namely, the novel hybrid SiO2 shell played an important role in generating a series of specific optical properties. In addition, the novel hybrid SiO2 shell can be created if no CdTe QD is added. In order to gain an insight into the inter structure of the hybrid shell, we characterized the hybrid SiO2-coated CdTe QDs using X-ray diffraction analysis and discuss the formation mechanism of such a hybrid structure. This work is significant because the novel hybrid SiO2-coated CdTe QDs with its excellent properties can be used in many applications, such as biolabeling and optoelectronic devices.

  10. Growth and characterization of CdTe on GaAs/Si substrates

    Science.gov (United States)

    Radhakrishnan, G.; Nouhi, A.; Liu, J.

    1988-01-01

    Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown in Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence, and scanning electron microscopy have been used to characterize the CdTe films.

  11. Time-resolved photoluminescence of polycrystalline CdTe grown by close-spaced sublimation

    Science.gov (United States)

    Keyes, B.; Dhere, R.; Ramanathan, K.

    1994-06-01

    Polycrystalline CdTe has shown great promise as a low-cost material for thin-film, terrestrial photovoltaic applications, with efficiencies approaching 16% achieved with close-spaced sublimation (CSS)-grown CdTe. Due to the inherent complexities of polycrystalline material, much of the progress in this area has occurred through a slow trial-and-error process. This report uses time-resolved photoluminescence (TRPL) to characterize the CdTe material quality as a function of one basic growth parameter—substrate temperature. This characterization is done for two different glass substrate materials, soda-lime silicate and borosilicate.

  12. Close space sublimation of CdTe for solar cells and the effect of underlying layers

    OpenAIRE

    Wakeling, B. R.

    2010-01-01

    This work has focused on the design, construction and testing of a close space sublimation system for CdTe deposition. In addition, it also focused on variations to the treatment and fabrication procedures of the transparent conducting oxide and CdS layers prior to the CdTe deposition, in order to influence the structure and electrical properties of the CdTe/CdS interface. CdTe was deposited by the physical vapour process, close space sublimation. The equipment used was custom built for this ...

  13. Preparation of CdTe nanocrystal-polymer composite microspheres in aqueous solution by dispersing method

    Institute of Scientific and Technical Information of China (English)

    LI Minjie; WANG Chunlei; HAN Kun; YANG Bai

    2005-01-01

    Highly fluorescent CdTe nanocrystals were synthesized in aqueous solution, and then processible CdTe nanocrystal-polymer composites were fabricated by coating the aqueous nanocrystals with copolymers of styrene and octadecyl-p-vinyl-benzyldimethylammonium chloride (SOV- DAC) directly. A dichloromethane solution of CdTe nano- crystal-polymer composites was dispersed in the aqueous solution of poly (vinyl alcohol) (PVA) generating highly fluorescent microspheres. Experimental parameters such as the concentration of nanocrystal-polymer composites, the concentration of PVA, and stirring speed which had important effect on the preparation of the microspheres were investigated in detail with fluorescent microscope characterization.

  14. Narrowing the size distribution of CdTe nanocrystals using digestive ripening

    Indian Academy of Sciences (India)

    Mona Mittal; Sameer Sapra

    2015-06-01

    Digestive ripening of polydispersed colloidal CdTe nanocrystals is performed which results in monodispersed nanocrystals (NCs) as studied by optical spectroscopy. Optimization of ligand and refluxing time is carried out. Monodispersed NCs are obtained using mercaptopropionic acid (MPA) as a digestive ripening agent at a refluxing time of 1–2 h. Digestive ripening of CdTe NCs, which are less polydispersed, is also executed and it leads to more monodispersed NCs. In all the cases, there is a shift of maximum emission wavelength of CdTe NCs after digestive ripening that may be due to Ostwald ripening along with digestive ripening.

  15. Metalorganic Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned (211)Si

    Science.gov (United States)

    2012-05-15

    respectively. X-ray analysis of thin CdTe films grown on these substrates gave wider full-width half-maximum (FWHM) values when compared to the layers grown...obtained in the temperature range of 575-675 °C and 505-520 °C respectively. X-ray analy- sis of thin CdTe films grown on these substrates gave wider...An effort was also made to grow thin uniformly merged ~0.6 µm (211)B CdTe film on nanopatterned (211)Si by

  16. Electrodeposition, characterization and photo electrochemical properties of CdSe and CdTe

    OpenAIRE

    Atef Y. Shenouda; El Sayed, El Sayed M.

    2015-01-01

    CdSe and CdTe are electrodeposited using 0.1 M Cd2+ and different ion concentrations of Se and Te. The effect of the temperature on the electrodeposition process is also studied. The crystal structure of the deposited CdSe and CdTe is investigated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) of samples deposited at optimized parameters reveals that CdSe has spongy spherical grains while CdTe has coralloid morphology. Optical absorption shows the presence of direct transition...

  17. APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE

    Energy Technology Data Exchange (ETDEWEB)

    Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

    2001-01-01

    A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

  18. ISGRI: a CdTe array imager for INTEGRAL

    Science.gov (United States)

    Lebrun, Francois; Blondel, Claire; Fondeur, Irene; Goldwurm, Andrea; Laurent, Phillipe; Leray, Jean P.

    1996-10-01

    The INTEGRAL soft gamma-ray imager (ISGRI) is a large and thin CdTe array. Operating at room temperature, this gamma camera covers the lower part (below 200 keV) of the energy domain (20 keV - 10 MeV) of the imager on board the INTEGRAL Satellite (IBIS). The ASIC's front-end electronics features particularly a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The charge loss correction and its performances are presented as well as the results of various studies on CdTe thermal behavior and radiation hardness. At higher energy (above 200 keV) ISGRI will operate in conjunction with PICsIT, the IBIS CsI gamma camera. A selection among the events in coincidence performed on the basis of the Compton scattering properties reduces strongly the background. This allows an improvement of the sensitivity and permits short term imaging and spectral studies (high energy pulsars) which otherwise would not have fit within the IBIS telemetry allocation.

  19. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    Energy Technology Data Exchange (ETDEWEB)

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  20. Preparation and properties of evaporated CdTe films

    Science.gov (United States)

    Bube, R. H.; Fahrenbruch, A. L.; Chien, K. F.

    1987-07-01

    Previous work on evaporated CdTe films for photovoltaics showed no clear path to successful p-type doping of CdTe during deposition. Post-deposition annealing of the films in various ambients thus was examined as a means of doping. Anneals were done in Te, Cd, P, and As vapors and in vacuum, air and Ar, all of which showed large effects on series resistance and diode parameters. With As, series resistance values of In/p-CdTe/graphite structures decreased markedly. This decrease was due to a decrease in grain boundary and/or back contact barrier height, and thus was due to large increases in mobility; the carrier density was not altered substantially. Although the series-resistance decreases were substantial, the diode characteristics became worse. The decreases were not observed when CdS/CdTe cells were fabricated on Te vapor-annealed films. Preparation of ZnO films by reactive evaporation yielded promising results. Deposition of p-ZnTe films by hot-wall vapor evaporation, using conventional techniques, yielded acceptable specimens.

  1. Emitter Choice for Epitaxial CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-11-21

    High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

  2. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  3. Patterning thick diffused junctions on CdTe

    CERN Document Server

    Kalliopuska, Juha; Sipilä, Heikki; Andersson, Hans; Vähänen, Sami; Eränen, Simo; Tlustos, Lukas

    2009-01-01

    Dividing the detector crystal into discrete pixels enables making an imaging detector, in which the charge collected by each pixel can be read separately. Even if the detector is not meant for imaging, patterns on the crystal surface may be used as guard structures that control and limit the flow of charges in the crystal. This has been exceedingly hard for the detector crystals having thick diffused layers. The paper reports a patterning method of the thick diffused junctions on CdTe. The patterning method of In-diffused pn-junction on CdTe chip is demonstrated by using a diamond blade. The patterning is done by removing material from the pn-junction side of the chip, so that the trenches penetrate the diffused layer. As the trenches extend deeper into the bulk than the junction, the regions separated by the trench are electrically isolated. Electrical characterization results are reported for the strips separated by trenches with various depths. The strip isolation is clearly seen in both measured leakage c...

  4. Facile preparation of highly luminescent CdTe quantum dots within hyperbranched poly(amidoamine)s and their application in bio-imaging.

    Science.gov (United States)

    Shi, Yunfeng; Liu, Lin; Pang, Huan; Zhou, Hongli; Zhang, Guanqing; Ou, Yangyan; Zhang, Xiaoyin; Du, Jimin; Xiao, Wangchuan

    2014-03-13

    A new strategy for facile preparation of highly luminescent CdTe quantum dots (QDs) within amine-terminated hyperbranched poly(amidoamine)s (HPAMAM) was proposed in this paper. CdTe precursors were first prepared by adding NaHTe to aqueous Cd2+ chelated by 3-mercaptopropionic sodium (MPA-Na), and then HPAMAM was introduced to stabilize the CdTe precursors. After microwave irradiation, highly fluorescent and stable CdTe QDs stabilized by MPA-Na and HPAMAM were obtained. The CdTe QDs showed a high quantum yield (QY) up to 58%. By preparing CdTe QDs within HPAMAM, the biocompatibility properties of HPAMAM and the optical, electrical properties of CdTe QDs can be combined, endowing the CdTe QDs with biocompatibility. The resulting CdTe QDs can be directly used in biomedical fields, and their potential application in bio-imaging was investigated.

  5. Laser ablation synthesis route of CdTe colloidal quantum dots for biological applications

    Science.gov (United States)

    Almeida, D. B.; Rodriguez, E.; Moreira, R. S.; Agouram, S.; Barbosa, L. C.; Jimenez, E.; Cesar, C. L.

    2009-07-01

    In this work we report a novel technique for obtain thiol capped CdTe colloidal quantum dots in one step. These nanoparticles are compatible for silica capping indicating their possible use as fluorescent markers.

  6. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  7. Effects of high-temperature annealing on ultra-thin CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xia Wei; Lin Hao; Wu, Hsiang N.; Tang, Ching W., E-mail: chtang@che.rochester.edu

    2011-10-31

    High-temperature annealing (HTA), a process step prior to vapor cadmium chloride (VCC) treatment, has been found to be useful for improving the crystallinity of CdTe films and the efficiency of ultra-thin CdTe solar cells. Scanning electron microscopy, optical absorption, photoluminescence measurements and analyses on photoluminescence results using spectral deconvolution reveal that the additional HTA step produces substantial grain growth and reduces grain boundary defects. It also reduces excessive sulfur diffusion across the junction that can occur during the VCC treatment. The HTA step helps to produce pinhole-free CdTe films and reduce electrical shorts in ultra-thin CdTe solar cells. An efficiency of about 11.6% has been demonstrated for ultra-thin CdS/CdTe solar cells processed with HTA step.

  8. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    Institute of Scientific and Technical Information of China (English)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  9. Synthesis of CdTe Quantum Dots with Tunable Photoluminescence Using Tellurium Dioxide as Tellurium Source

    Institute of Scientific and Technical Information of China (English)

    刘声燕; 王益林; 杨昆; 周立亚

    2012-01-01

    A simple and convenient method has been developed for synthesis of water-soluble CdTe quantum dots (QDs) under ambient atmospheric conditions. In contrast to the traditional aqueous synthesis, green to red emitting CdTe QDs were prepared by using TeO2 to replace Te or AIzTe3 as tellurium source in this method. The influences of ex- perimental variables, including pH value, 3-mercaptopropionic acid (MPA)/Cd and Te/Cd molar ratios, on the emis- sion peak and photoluminescence (PL) quantum yield (QY) of the obtained CdTe QDs have been systematically investigated. Experimental results indicate that green to red emitting CdTe QDs with a maximum photolumines- cence quantum yield of 35.4% can be prepared at pH 11.3 and rt(Cd) : n(Te) : n(MPA)= 1 : 0.1 : 1.7.

  10. Enhanced Specificity of Multiplex Polymerase Chain Reaction via CdTe Quantum Dots

    Science.gov (United States)

    Liang, Gaofeng; Ma, Chao; Zhu, Yanliang; Li, Shuchun; Shao, Youhua; Wang, Yong; Xiao, Zhongdang

    2011-12-01

    Nanoparticles were recently reported to be able to improve both efficiency and specificity in polymerase chain reaction (PCR). Here, CdTe QDs were introduced into multi-PCR systems. It was found that an appropriate concentration of CdTe QDs could enhance the performance of multi-PCR by reducing the formation of nonspecific products in the complex system, but an excessive amount of CdTe QDs could suppress the PCR. The effects of QDs on PCR can be reversed by increasing the polymerase concentration or by adding bovine serum albumin (BSA). The mechanisms underlying these effects were also discussed. The results indicated that CdTe QDs could be used to optimize the amplification products of the PCR, especially in the multi-PCR system with different primers annealing temperatures, which is of great significance for molecular diagnosis.

  11. Photoinduced cathodic deposition of CdTe nanoparticles on polycrystalline gold substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ham, Sunyoung; Paeng, Ki-Jung [Department of Chemistry, Yonsei University, Wonju Campus, Wonju, Kangwondo 220-710 (Korea); Choi, Byunghyun; Myung, Noseung [Department of Applied Chemistry, Konkuk University Chungju Campus, Chungju, Chungbuk 380-701 (Korea); Rajeshwar, Krishnan [Center for Renewable Energy Science and Technology (CREST), The University of Texas at Arlington, Arlington, TX 76109-0065 (United States)

    2007-06-15

    A combination of photocathodic stripping and precipitation was used to prepare CdTe nanoparticles (size range: 30-60 nm) that were immobilized on a polycrystalline Au substrate. Thus visible light irradiation of a Te modified Au surface generated Te{sup 2-} species in situ followed by interfacial reaction with added Cd{sup 2+} ions in 0.1 M Na{sub 2}SO{sub 4} electrolyte. The resultant CdTe compound semiconductor deposited as nanosized particles uniformly dispersed on the Au substrate surface. This approach to CdTe nanoparticle deposition was monitored by a combination of electrochemical methods (voltammetry, chronoamperometry) and quartz crystal microgravimetry in the 'dark' and under illumination. The synthesized CdTe nanoparticles were characterized by scanning electron microscopy and energy dispersive X-ray analyses and laser Raman spectroscopy. (author)

  12. Spatial luminescence imaging of dopant incorporation in CdTe Films

    Science.gov (United States)

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt K.; Al-Jassim, Mowafak

    2017-01-01

    State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. The image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

  13. Spatial luminescence imaging of dopant incorporation in CdTe Films

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt K.; Al-Jassim, Mowafak

    2017-01-28

    State-of-the-art cathodoluminescence (CL) spectrum imaging with spectrum-per-pixel CL emission mapping is applied to spatially profile how dopant elements are incorporated into Cadmium telluride (CdTe). Emission spectra and intensity monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on computational modeling. Our results show that grain boundaries play a role in incorporating dopants in CdTe exposed to copper, phosphorus, and intrinsic point defects in CdTe. The image analysis provides critical, unique feedback to understand dopant incorporation and activation in the inhomogeneous CdTe material, which has struggled to reach high levels of hole density.

  14. Interface reactions in CdTe solar cell processing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; Dhere, R.; Swartzlander-Guest, A. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1998-12-31

    Currently, the best performing CdS/CdTe solar cells use a superstrate structure in which CdTe is deposited on a heated CdS/SnO{sub 2}/Glass substrate. In the close-spaced-sublimation (CSS) process, substrate temperatures in the range 550 C to 620 C are common. Understanding how these high processing temperatures impact reactions at the CdS/CdTe interface in addition to reactions between previously deposited layers is critical. At the SnO{sub 2}/CdS interface the authors have determined that SnO{sub 2} can be susceptible to reduction, particularly in H{sub 2} ambients. Room-temperature sputtered SnO{sub 2} shows the most susceptibility. In contrast, higher growth temperature chemical vapor deposited (CVD) SnO{sub 2} appears to be much more stable. Elimination of unstable SnO{sub 2} layers, and the substitution of thermal treatments for H{sub 2} anneals has produced total-area solar conversion efficiencies of 13.6% using non-optimized SnO{sub 2} substrates and chemical-bath deposited (CBD) CdS. Alloying and interdiffusion at the CdS/CdTe interface was studied using a new lift-off approach which allows enhanced compositional and structural analysis at the interface. Small-grained CdS, grown by a low-temperature CBD process, results in more CdTe{sub 1{minus}x}S{sub x} alloying (x = 12--13%) relative to larger-grained CdS grown by high-temperature CSS (x{approximately}2--3%). Interdiffusion of S and Te at the interface, measured with lift-off samples, appears to be inversely proportional to the amount of oxygen used during the CSS CdTe deposition. The highest efficiency to date using CSS-grown CdS is 10.7% and was accomplished by eliminating oxygen during the CdTe deposition.

  15. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    OpenAIRE

    Aliyu, M. M.; Islam, M.A.; Hamzah, N. R.; Karim, M. R.; M.A. Matin; Sopian, K.; Amin, N

    2012-01-01

    This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears...

  16. Deposition of Cl-doped CdTe polycrystalline films by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Takahashi, Kohei; Akiba, Sho; Yasuda, Nao [Department of Electrical and Electronic Engineering, National Institute of Technology, Kisarazu College, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Ichioka, Akina; Doki, Takahiro; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2015-06-15

    The effects of Cl-doping on the CdTe layers by the close-spaced sublimation (CSS) deposition were investigated. Cl-doped CdTe polycrystalline films were deposited on graphite substrates by CSS method using a mixture of CdTe and CdCl{sub 2} powder as a source. In X-ray diffraction (XRD) patterns of the obtained films with various deposition times, many diffraction peaks other than CdTe peaks were observed in the deposition times lower than 10 min. These diffraction peaks were probably due to the formation of chlorides of Cd, Te and C, such as CdCl{sub 2}, TeCl{sub 4}, Te{sub 3}Cl{sub 2} and C{sub 10}Cl{sub 8}. X-ray fluorescence (XRF) and secondary ion mass spectrometry (SIMS) analyses revealed that a large amount of chlorine was contained in the films with the deposition times lower than 10 min, and that Cl concentration decreased with increasing the deposition time above 3 min. These results indicate that the films containing the chlorides of Cd, Te and C in addition to CdTe are formed in the initial stage of the CSS deposition using a mixture of CdTe and CdCl{sub 2} powder as a source. Cross-sectional images revealed that the grain size was decreased by the effect of Cl-doping. Furthermore, current-voltage (I -V) characteristics of the CdTe/graphite structures were measured, and it was found that the resistivity of the Cl-doped CdTe layer was much higher than that of the undoped CdTe layer. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Characterization of Cr(V)-induced genotoxicity using CdTe nanocrystals as fluorescent probes.

    Science.gov (United States)

    Zhang, Wen-Hao; Sui, Chao-Xia; Wang, Xie; Yin, Gong-Ju; Liu, Ying-Fan; Zhang, Ding

    2014-12-21

    CdTe nanocrystals capped by cysteamine were synthesized to study Cr(V)-induced genotoxicity. On the surface of TiO2 thin films, the stepwise process of DNA breakage induced by Cr(V)-GSH complexes was vividly observed by using CdTe-DNA self-assembled fluorescent probes; in acetate buffer solution, an analytical method was developed to detect Cr(V)-induced genotoxicity with CdTe fluorescent probes.

  18. Degradation processes occur on the CdTe thin films solar elements

    CERN Document Server

    Mirsagatov, S A; Makhmudov, M; Muzapharova, S A

    1999-01-01

    It is shown the Cu in CdTe polycristalline films is diffusing on the complex mechanism. By bringing of W atoms in thin CdTe layers it is possible to operate diffusion's speed of Cu atoms. Initiation of the (Cu sup + W sub C sub d sup -) complexes under the conditions N(W sub C sub d sup -)>=N(Cu sub i sup +) hardly reduce the diffusion velocity of Cu atoms.

  19. Transferring CdTe Nanoparticles from Liquid Phase to Polyvinylpyrrolidone Nanofibers by Electrospinning and Detecting Its Photoluminescence Property

    Institute of Scientific and Technical Information of China (English)

    WANG Shu-gang; YANG Qing-biao; BAI Jie; SONG Yan; ZHANG Chao-qun; LI Yao-xian

    2008-01-01

    The major aim of this work was to synthesize thio-stabilized CdTe nanoparticles(NPs) in an aqueous solution,which was then enwrapped with cetyltrimethylammonium bromide(CTAB),and finally transferred to the polyvinylpyrrolidone(PVP) matrix by electrospinning,The PVP nanofibers containing CdTe NPs were characterized by scanning electron microscopy(SEM) and transmission electron microscopy(TEM),to observe the morphology of the nanofibers and the distribution of CdTe NPs,The selective area electronic diffraction(SAED) pattern verified that CdTe NPs were cubic lattice,The photoluminescence(PL) spectrum indicated that CdTe NPs existed in an optical style in PVP nanofibers,Moreover,X-ray photoelectron spectra(XPS) revealed that thiol-stabilized CdTe NPs were enwrapped by CTAB,and PVP acted as a dispersant in the process of electrospinning.

  20. Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B

    Energy Technology Data Exchange (ETDEWEB)

    Burton, George L.; Diercks, David R.; Perkins, Craig L.; Barnes, Teresa M.; Ogedengbe, Olanrewaju S.; Jayathilaka, Pathiraja A.; Edirisooriya, Madhavie; Wang, Alice; Myers, Thomas H.; Gorman, Brian P.

    2017-07-01

    Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.

  1. Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe

    Science.gov (United States)

    Reddy, M.; Radford, W. A.; Lofgreen, D. D.; Olsson, K. R.; Peterson, J. M.; Johnson, S. M.

    2014-08-01

    HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and microvoid defects, do not contain a polycrystalline core and, therefore, do not offer a good contrast for observation using optical and electron microscopes. This paper reports a way of identifying these defects by using a Nomarski optical microscopy image overlay on focused ion beam microscopy images for preparation of thin cross-sectional foils of these defects. Transmission electron microscopy was used to study the defect cross-sections to identify the origin and evolution of the morphological defects and their effect on the epitaxial layer. This paper reports cross-sectional analysis of four morphological defects of different shape and size.

  2. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2013-01-01

    Full Text Available The transient photovoltaic (PV characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  3. The effect of metal-semiconductor contact on the transient photovoltaic characteristic of HgCdTe PV detector.

    Science.gov (United States)

    Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

    2013-01-01

    The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  4. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    Science.gov (United States)

    Reddy, M.; Lofgreen, D. D.; Jones, K. A.; Peterson, J. M.; Radford, W. A.; Benson, J. D.; Johnson, S. M.

    2013-11-01

    HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.

  5. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

    Science.gov (United States)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-01

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  6. Facile synthesis of straight and branched CdTe nanowires using CdO as precursor.

    Science.gov (United States)

    Liu, Sheng; Yang, Chunyan; Zhang, Wen-Hua; Li, Can

    2011-12-01

    High-quality colloidal CdTe nanowires (NWs) containing both straight and branched ones were controllably prepared via a solution-based approach, using a low melting Bi nanoparticles as catalysts, CdO and tributylphosphine telluride (TBP-Te) as precursors, and a tri-n-octylphosphine oxide/tri-n-octylphosphine (TOPO/TOP) mixture as solvent. The resulting straight CdTe NWs have typical diameters below 20 nm accompanying with lengths exceeding 10 microm. In the case of branched CdTe NWs, tripod, V-shaped and y-shaped morphologies are obtained by decreasing the apparent Cd/Te molar ratio. It is found that, as the surface capping ligands, di-n-octylphosphinic acid (DOPA) is superior to decylphosphonic acid (DPA) in the reproducible growth of high-quality CdTe NWs. Since highly toxic dimethylcadmium, a cadmium precursor widely used in literatures, is replaced by CdO and the amount of the TOPO/TOP solvent mixture is significantly reduced, a relative safe and economical synthetic approach of high-quality colloidal CdTe NWs with controllable morphology is thus presented.

  7. Studies on interaction between CdTe quantum dots and -chymotrypsin by molecular spectroscopy

    Indian Academy of Sciences (India)

    Jianniao tian; Shengzhi Wei; Yanchun Zhao; Rongjun Liu; Shulin Zhao

    2010-05-01

    In this article, the interaction between -Chymotrypsin and CdTe QDs was investigated by fluorescence, synchronous fluorescence, and circular dichroism (CD) spectroscopic methods at pH 7.20 and pH 9.05. The intrinsic fluorescence of -Chy is quenched by CdTe QDs. Under different pH conditions, the level of binding constants is determined to be 103 from fluorescence data. The hydrogen bond or van der Waals force is involved in the binding process when pH is 9.05, while the hydrophobic and electrostatic interactions play main role in the binding process when pH is 7.20. The red-shift of synchronous fluorescence spectral peak of protein after the addition of CdTe QDs reveals that the microenvironments around tryptophan residues are disturbed by CdTe QDs. The secondary structure of -Chy undergoes slight changes as similar by far-UV CD data. The activity and stability of -Chy in the presence of CdTe QDs were also studied. -Chy can maintain its high activity and stability under different pH conditions for 24 h in the presence of CdTe QDs.

  8. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  9. Optical properties and charge carrier dynamics of CdTe quantum dots in silicate glasses

    Science.gov (United States)

    Li, Wenke; Zhang, Wenchao; Xia, Mengling; Liu, Chao; Wang, Jing

    2017-05-01

    CdTe quantum dots (QDs) in silicate glasses were fabricated through conventional melt-quenching and heat-treatment; steady-state and transient optical properties of CdTe QDs were investigated. CdTe QDs with diameters of 2.3-5.9 nm with photoluminescence in the range of 553-768 nm were precipitated in the glasses. Time-resolved photoluminescence and transient absorption analysis showed that photoluminescence of CdTe QDs was composed of intrinsic emission and defect emission. Oxidation of Te2- and formation of Te2 during thermal treatment led to the unpassivated Cd2+ on the surface of CdTe QDs and formation of shallow trapping states. The photo-generated electrons were trapped by the shallow surface states of CdTe QDs within 0.4±0.03 ps, and Auger recombination processes occurred within a timescale of 3.2±0.35 ps. Both intrinsic emission and defect emission with effective lifetimes of several nanoseconds and dozens of nanoseconds were observed.

  10. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  11. Study of Cu-related Defect States in Single-crystal CdTe

    Science.gov (United States)

    Corwine, Caroline; Sites, James; Gessert, Timothy; Metzger, Wyatt; Dippo, Pat; Duda, Anna

    2003-10-01

    We have studied single-crystal CdTe using low-temperature photoluminescence (PL) in an effort to understand the effects of copper on the deep levels, as well as the effect of a bromine methanol (BrMe) etch on subsequent copper diffusion into CdTe. In present polycrystalline CdS/CdTe solar cell technology, the use of a back contact that contains Cu is necessary to produce high-efficiency cells. However, it is not generally understood why Cu is necessary for these devices to function well. In order to obtain further advances in the efficiencies of these solar cells, it is important to know how the back contact process may affect the defect states in CdTe. PL is one tool used to study defect states. However, before PL can be used effectively for polycrystalline CdTe solar cells, relevant spectral features first must be interpreted for single-crystal CdTe. All PL in this study was taken at 4.5 K. We report on PL peaks at 1.40 and 1.45 eV, which are seen only after Cu is diffused into single-crystal CdTe.

  12. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui; Burst, James M.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt K.

    2016-05-01

    A key challenge in cadmium telluride (CdTe) semiconductors is obtaining stable and high hole density. Group I elements substituting Cd can form ideal acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but copper creates stability problems and hole density that has not exceeded 1015 cm-3. If hole density can be increased beyond 10^16 cm-3, CdTe solar technology can exceed multicrystalline silicon and provide levelized costs of electricity below conventional energy sources. Group V elements substituting Te offer a solution, but are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain boundary (GB) diffusion of phosphorous (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast GB diffusion, there is a fast bulk diffusion component that enables deep P incorporation in CdTe. Detailed first-principles calculations indicate the slow bulk diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, this result opens up new experimental possibilities for Group V doping in CdTe materials.

  13. Cu{sub 2}S as ohmic back contact for CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Türck, Johannes; Siol, Sebastian; Mayer, Thomas; Klein, Andreas; Jaegermann, Wolfram, E-mail: jaegermann@surface.tu-darmstadt.de

    2015-05-01

    We prepared a back contact for CdTe solar cells with Cu{sub 2}S as primary contact. Cu{sub 2}S was evaporated on CdCl{sub 2} treated CdTe solar cells in superstrate configuration. The CdTe and CdS layers were deposited by Closed Space Sublimation. Direct interface studies with X-ray photoelectron spectroscopy have revealed a strongly reactive interface between CdTe and Cu{sub 2}S. A valence band offset of 0.4-0.6 eV has been determined. The performance of solar cells with Cu{sub 2}S back contacts was studied in comparison to cells with an Au contact that deposited onto a CdCl{sub 2}-treated CdTe surface that was chemically etched using a nitric-phosphoric etch. The solar cells were analyzed by current-voltage curves and external quantum efficiency measurements. After several post deposition annealing steps, 13% efficiency was reached with the Cu{sub 2}S back contact, which was significantly higher than the ones obtained for the NP-etched back contacts. - Highlights: • A new back contact for CdTe solar out of Cu{sub 2}S has been tested. • With a direct interface experiment the valence band offset was determined. • Post deposition heat treatment has been carried out for the solar cells. • 13% efficiency has been reached with the Cu{sub 2}S back contact.

  14. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  15. Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Ogedengbe, O. S.; Swartz, C. H.; Jayathilaka, P. A. R. D.; Petersen, J. E.; Sohal, S.; LeBlanc, E. G.; Edirisooriya, M.; Zaunbrecher, K. N.; Wang, A.; Barnes, T. M.; Myers, T. H.

    2017-06-06

    Iodine-doped CdTe and Cd1-xMgxTe layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopant concentration, while Hall measurement was used for determining carrier concentration. Photoluminescence intensity and time-resolved photoluminescence techniques were used for optical characterization. Maximum n-type carrier concentrations of 7.4 x 1018 cm-3 for CdTe and 3 x 1017 cm-3 for Cd0.65Mg0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the CdTe samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd0.65Mg0.35Te is about 58 meV. Iodine-doped samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2 x 1018 cm-3, while indium shows substantial non-radiative recombination at carrier concentrations above 5 x 1016 cm-3. Iodine was shown to be thermally stable in CdTe at temperatures up to 600 degrees C. Results suggest iodine may be a preferred n-type dopant compared to indium in achieving heavily doped n-type CdTe.

  16. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole.

    Science.gov (United States)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-15

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL(-1) (3.4 ng mL(-1)) and the quantitative determination range was 0-2.8 μg mL(-1) with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  17. [Preparation and characterization of tumor targeted CdTe quantum dots modified with functional polymer].

    Science.gov (United States)

    Zhu, Hong-Yan; Zhu, Jing-Ping; Xie, Ai-Mei; Yuan, Jing; Hua, Ye; Zhang, Wei

    2014-10-01

    N-acetyl-L-cysteine (NAC) capped quantum dots (QDs) were synthesized by a hydrothermal method and coated with 2-amino-2-deoxy-D-glucose (DG), polyethylene glycol (PEG), and 9-D-arginine (9R). The optical properties, morphology and structure of 9R/DG-coated CdTe QDs were characterized by ultraviolet-visible spectrometry, fluorescence spectrum, Fourier transform infrared (FTIR), proton nuclear magnetic resonance (1H NMR), liquid chromatography-mass spectrometer (LC-MS), sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) and transmission electron micrographs (TEM). Furthermore, the biocompatibility, tumor targeted ability and transmembrane action of 9R/DG-coated CdTe QDs were studied. Results indicated that 9R/DG-coated CdTe QDs was constructed successfully by ligand exchange. The 9R/DG-coated CdTe QDs with the size of 8-10 nm had good dispersity and the absorbance and fluorescence peaks of CdTe QDs after modification were red shifted from 480 nm to 510 nm and 627 nm to 659 nm, respectively. In addition, the CdTe QDs modified by PEG, DG and 9R displayed good biocompatibility, high targeted ability to the cancer cells with glucose transporter type 1 (GLUT1) receptor high expression and obvious transmembrane ability.

  18. CdTe quantum dots as a novel biosensor for Serratia marcescens and Lipopolysaccharide.

    Science.gov (United States)

    Ebrahim, Sh; Reda, M; Hussien, A; Zayed, D

    2015-01-01

    The main objective of this work is to synthesize CdTe quantum dots (QDs) conjugated with Concanavalin A (Con A) as a novel biosensor to be selective and specific for the detection of Lipopolysaccharide (LPS). In addition, the conjugated CdTe QDs-Con A was used as fluorescence labels to capture Serratia marcescens bacteria through the recognition between CdTe QDs-Con A and LPS of S. marcescens. The appearance of the lattice plans in the high resolution transmission electron photograph indicated a high crystalline with an average size of 4-5 nm for the CdTe QDs. The results showed that the relative fluorescence intensity of CdTe QDs-Con A decreased linearly with LPS concentration in the range from 10 to 90 fg/mL and with correlation coefficient (R(2)) equal to 0.9713. LPS surrounding the S. marcescens bacteria was bound to the CdTe QDs-Con A and leads to quenching of PL intensity. It was found that a good linear relationship between the relative PL intensity and the logarithmic of cell population of S. marcescens in range from 1×10 to 1×10(6) CFU/mL at pH 7 with R(2) of 0.952 was established.

  19. Reflectance anisotropy spectra of CdTe(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez-Nava, R.A.; Arzate, N.; Mendoza, B.S. [Photonics Division, Centro de Investigaciones en Optica A. C., Leon, Guanajuato (Mexico)

    2010-08-15

    We present first-principles calculations of reflectance anisotropy spectra (RAS) of the more common CdTe(001) surface reconstructions: Te-terminated (2 x 1) and Cd-terminated (2 x 1) and c(2 x 2). The last two reconstructions with a Cd coverage of half atomic layers. Calculations have been performed by using the density-functional formalism within the local-density approximation + scissors corrections. The electron-ion interaction has been modeled by ab initio, relativistic norm-conserving pseudopotentials. We have also calculated RAS spectra using a semi-empirical tight binding method (SETB) within a sp{sup 3} s{sup *} basis. We show RAS of each surface reconstruction and compare our theoretical results with experimental results reported in the literature and we found a good agreement between experimental and theoretical spectra for the (2 x 1) reconstructions. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans.

    Science.gov (United States)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

    2015-01-01

    We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1-1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd(2+). Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  1. HgCdTe technology in Germany: the past, the present, and the future

    Science.gov (United States)

    Cabanski, W.; Ziegler, J.

    2009-05-01

    The first HgCdTe (MCT) activities at AEG-Telefunken in Germany were started in 1976. As part of the closing of AEG, the Heilbronn based IR-technology division was established as a spin-off company in 1995, under the brand name of AIM Infrarot-Module GmbH. A rapidly growing team of scientists focused on the detector-dewar-cooler technology and the development of linear photoconductive MCT arrays by applying the solid-state-recrystallization (SSR) technique for MCT growth, depositing and thinning MCT on sapphire substrates and oxide passivation. In 1979, after successful development of an own MCT-technology base, AEG-Telefunken entered into a license agreement with Texas Instruments for US Common Module (CM) technology in order to speed up the entry into full scale production with a transfer of MCT-material, dewar and cooler processes. CMs are still manufactured in small numbers. At the same time, a proprietary pc-MCT technology, independent of the CM production line, was developed and continuously matured and is today successfully applied in various custom designs like detectors for smart ammunition, for commercial and space applications. In 1982 started the development of 2nd Gen. photovoltaic MCT detectors, based on liquid-phase-epitaxy (LPE) in tilting and dipping technique and on planar array technology with Hg-Diffusion and ion implantation for pn-junction formation and CdTe/ZnS passivation. Linear MCT arrays in the 8-10,5 μm wavelength range with state of the art electro-optical performance have rapidly been demonstrated. Within the frame of the European anti-tank program TRIGAT, a two-way know-how-transfer between AEGTelefunken and SOFRADIR was established for linear LW MCT array processing, flip-chip-technology and dewar technology. Today, AIM's 2nd Gen. portfolio is based on MCT-LPE in dipping technique on CdZnTe substrates, characterized by a very low defect and dislocation density for 0,9 μm to 15μm wavelength application. Array processing is performed

  2. van der Waals epitaxy of CdTe thin film on graphene

    Science.gov (United States)

    Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

    2016-10-01

    van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

  3. Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Salavei, A.; Rimmaudo, I. [Laboratory for Applied Physics, Department of Computer Science, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, F. [Laboratorio di Chimica dello Stato Solido, DB, Univ. Verona, and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Romeo, A., E-mail: alessandro.romeo@univr.it [Laboratory for Applied Physics, Department of Computer Science, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy)

    2013-05-01

    Due to its high scalability and low production cost, CdTe solar cells have shown a very strong potential for large scale energy production. Although the number of modules produced could be limited by tellurium scarcity, it has been reported that reducing CdTe thickness down to 1.5 μm would solve this issue. There are, however, issues to be considered when reducing thickness, such as formation of pinholes, lower crystallization, and different possible effects on material diffusion within the interfaces. In this work, we present the study of CdTe solar cells fabricated by vacuum evaporation with different CdTe thicknesses. Several cells with a CdTe thickness ranging from 0.7 to 6 μm have been fabricated. The deposition process has been optimized accordingly and their physical and electrical properties have been studied. Thin cells show a different electrical behavior in terms of open circuit voltage and fill factor. Efficiencies range from 7% for thin CdTe cells to 13.5% for the standard thickness. - Highlights: ► Ultra thin CdTe absorbers have been prepared and studied. ► Grain size is depending on the CdTe thickness but spread in the grains increases. ► Lattice parameter is reduced only for ultra thin CdTe. ► The band gap reveals an intermixed CdTe absorber. ► The reason for lower efficiency of ultra thin CdTe is explained.

  4. Effects of Gravity on the Double-Diffusive Convection during Directional Solidification of a Non-Dilute Alloy with Application to the HgCdTe

    Science.gov (United States)

    Bune, Andris; Gillies, Donald; Lehoczky, Sandor

    1999-01-01

    General 2-D and 3-D finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe in terrestrial and microgravity conditions. Parametric research was undertaken to investigate effects of gravity level, gravity vector orientation and growth velocity on the pattern of melt convection, shape of crystal/melt interface and radial thermal gradient. Verification of the model was undertaken by comparison with previously published results. For low growth velocities plane front solidification occurs. The location and the shape of the interface was determined using melting temperatures obtained from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion with temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors dimensional rather then non-dimensional modeling was performed. For gravity levels higher then 10(exp -7) of terrestrial one it was found that the maximum convection velocity is extremely sensitive to gravity vector orientation and can be reduced at least by 50% by choosing proper orientation of the ampoule. The predicted interface shape is in agreement with one obtained experimentally by quenching.

  5. Effects of Gravity on the Double-Diffusive Convection During Directional Solidification of a Non-Dilute Alloy with Application to HgCdTe

    Science.gov (United States)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1999-01-01

    A general 2-D and 3-D finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe in terrestrial and microgravity conditions. Verification of the 3-D model was undertaken by comparison with previously published results on convection in an inclined cylinder. For low growth velocities, plane front solidification occurs. The location and the shape of the interface were determined using melting temperatures obtained from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes a thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion due to the combined effects of composition and temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors, dimensional rather than non-dimensional modeling was performed. the predicted interface shape is in agreement with one obtained experimentally by quenching.

  6. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    Science.gov (United States)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  7. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Annual report, 1 February 1983-31 January 1984

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R; Fahrenbruch, A; Huber, W; Fortmann, C; Thorpe, T

    1984-09-01

    Variation of CdS/CdTe/graphite thick film solar cell properties was investigated as a function of temperature for CdS film deposition. A maximum open-circuit voltage of 0.67 V was found for a deposition temperature of 160/sup 0/C, corresponding to a CdS film resistivity of 150 ohm-cm. The effect is not due to avoidance of higher temperature annealing of the CdTe film in higher temperature CdS film depositions nor to the diffusion of In from the outermost CdS: In layer. The effect of coating the graphite before CdTe deposition with Au or Cu was also investigated. Although high concentrations of both Au or Cu could be determined after CdTe deposition, CdTe films grown on this coated graphite had lower hole densities than films grown on uncoated graphite. Photovoltaic parameters of thin-film CdS/CdTe/graphite solar cells were investigated as a function of storage time to check the stability of these cells. Initial degradation of parameters (especially fill factor) could be reversed by heat treatment in hydrogen, with subsequent properties being stable. Heat treatment of CdS/CdTe/graphite solar cells in air increases cell resistivity and decreases fill factor; heat treatment in hydrogen produces the reverse effect. The hole density is not affected by these heat treatments, suggesting that effects are associated with grain boundaries in the film.

  8. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 4, August 1-October 31, 1981

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R H

    1981-10-01

    The hot-wall vacuum evaporation system is nearly complete and the first films are expected in early December. CdTe homojunction cells were theoretically modelled and to some extent tested experimentally using the n-type CdTe film on p-type CdTe crystal homojunction cells previously deposited at Linz. Modelling emphasizes the known importance of surface recombination velocity for such homojunction cells. The n-type layer on the experimental cell was thinned by etching from 5 micrometers to 1.5 micrometers, with a corresponding increase in short-circuit current from 0.1 to 1 mA/cm/sup 2/. This behavior is as theoretically expected; to obtain a short-circuit current of 11 mA/cm/sup 2/, as required for a 10% cell, requires a thickness of about 0.2 micrometers for a surface recombination velocity of 10/sup 6/ cm/sec and other realistic cell parameters. By doping experiments on single crystal CdTe, it has been shown that the hole density does decrease when the P dopant density is decreased below a critical value in CdTe:P crystals, thus eliminating the possibility that the major acceptors in the P-doped crystals were not P impurity. Attempts to heavily dope CdTe with As were less successful, but this may be due to the use of elemental As as the dopant in this case rather than a compound of the dopant. Cs was shown to be an effective dopant of CdTe and resistivities as low as 0.3 ohm-cm corresponding to hole densities in the low 10/sup 17/ cm/sup -3/ range were obtained. An apparent correlation between the low-temperature barrier height associated with a grain boundary in CdTe and the angle of mismatch between the two grains has been observed. Improved capacitance of grain boundary measurements should yield defect densities.

  9. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-12-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  10. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  11. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao [Physics Department, Colorado State University, Fort Collins, Colorado 80523, USA; Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523, USA

    2016-06-17

    The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted

  12. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

    2014-11-12

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  13. Photodegradation of Mercaptopropionic Acid- and Thioglycollic Acid-Capped CdTe Quantum Dots in Buffer Solutions.

    Science.gov (United States)

    Miao, Yanping; Yang, Ping; Zhao, Jie; Du, Yingying; He, Haiyan; Liu, Yunshi

    2015-06-01

    CdTe quantum dots (QDs) were synthesized by 3-mercaptopropionic acid (MPA) and thioglycollic acid (TGA) as capping agents. It is confirmed that TGA and MPA molecules were attached on the surface of the QDs using Fourier transform infrared (FT-IR) spectra. The movement of the QDs in agarose gel electrophoresis indicated that MPA-capped CdTe QDs had small hydrodynamic diameter. The photoluminescence (PL) intensity of TGA-capped QDs is higher than that of MPA-capped QDs at same QD concentration because of the surface passivation of TGA. To systemically investigate the photodegradation, CdTe QDs with various PL peak wavelengths were dispersed in phosphate buffered saline (PBS) and Tris-borate-ethylenediaminetetraacetic acid (TBE) buffer solutions. It was found that the PL intensity of the QDs in PBS decreased with time. The PL peak wavelengths of the QDs in PBS solutions remained unchanged. As for TGA-capped CdTe QDs, the results of PL peak wavelengths in TBE buffer solutions indicated that S(2-) released by TGA attached to Cd(2+) and formed CdS-like clusters layer on the surface of aqueous CdTe QDs. In addition, the number of TGA on the CdTe QDs surface was more than that of MPA. When the QDs were added to buffer solutions, agents were removed from the surface of CdTe QDs, which decreased the passivation of agents thus resulted in photodegradation of CdTe QDs in buffer solutions.

  14. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

    Science.gov (United States)

    Okamoto, Tamotsu; Kitamoto, Shinji; Yamada, Akira; Konagai, Makoto

    2001-05-01

    The control of native defects in the CdTe thin film solar cells was investigated using a novel source for close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and the Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2% because of the extremely low shunt resistance. On the other hand, a conversion efficiency above 15% was obtained by using the Cd-rich source. Capacitance-voltage (C-V) characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed using the Cd-rich source.

  15. BSA activated CdTe quantum dot nanosensor for antimony ion detection.

    Science.gov (United States)

    Ge, Shenguang; Zhang, Congcong; Zhu, Yuanna; Yu, Jinghua; Zhang, Shuangshuang

    2010-01-01

    A novel fluorescent nanosensor for Sb(3+) determination was reported based on thioglycolic acid (TGA)-capped CdTe quantum dot (QD) nanoparticles. It was the first antimony ion sensor using QD nanoparticles in a receptor-fluorophore system. The water-soluable TGA-capped CdTe QDs were prepared through a hydrothermal route, NaHTe was used as the Te precursor for CdTe QDs synthesis. Bovine serum albumin (BSA) conjugated to TGA-capped CdTe via an amide link interacting with carboxyl of the TGA-capped CdTe. When antimony ion enters the BSA, the lone pair electrons of the nitrogen and oxygen atom become involved in the coordination, switching off the QD emission and a dramatic quenching of the fluorescence intensity results, allowing the detection of low concentrations of antimony ions. Using the operating principle, the antimony ion sensor based on QD nanoparticles showed a very good linearity in the range 0.10-22.0 microg L(-1), with the detection limit lower than 2.94 x 10(-8) g L(-1) and the relative standard deviation (RSD) 2.54% (n = 6). In a study of interferences, the antimony-sensitive TGA-QD-BSA sensor showed good selectivity. Therefore, a simple, fast, sensitive, and highly selective assay for antimony has been built. The presented method has been applied successfully to the determination of antimony in real water samples (n = 6) with satisfactory results.

  16. In vitro and in vivo toxicity of CdTe nanoparticles.

    Science.gov (United States)

    Zhang, Yongbin; Chen, Wei; Zhang, Jun; Liu, Jing; Chen, Guangping; Pope, Carey

    2007-02-01

    Cadmium telluride (CdTe) nanoparticles exhibit strong and stable fluorescence that is attractive for many applications such as biological probing and solid state lighting. The evaluation of nanoparticle toxicity is important for realizing these practical applications. However, no systematic studies of CdTe nanoparticle toxicity have been reported. We investigated and compared the size- and concentration-dependent cytotoxicity of CdTe nanoparticles in human hepatoma HepG2 cells using the MTT assay. CdTe nanoparticles elicited cytotoxicity in a concentration- and size-dependent manner, with smaller-sized particles exhibiting somewhat higher potency. Lesser cytotoxicity of partially purified CdTe-Red particles (following methanol precipitation and resuspension) suggested that free cadmium ions may contribute to cytotoxicity. We also evaluated the acute toxicity of CdTe-Red particles following intravenous exposure in male rats (2 micromol/kg). Few signs of functional toxicity or clinical (urinary or blood) changes were noted. Interestingly, motor activity was transiently reduced (2 hours after treatment) and then significantly increased at a later timepoint (24 hours after dosing). These studies provide a framework for further characterizing the in vitro and in vivo toxic potential of different types of CdTe nanoparticles and suggest that the nervous system may be targeted by these nanoparticles under some conditions.

  17. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  18. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Shamara [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Vatavu, Sergiu, E-mail: svatavu@usm.md [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Evani, Vamsi; Khan, Md; Bakhshi, Sara; Palekis, Vasilios [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Rotaru, Corneliu [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Ferekides, Chris [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States)

    2015-05-01

    A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects. - Highlights: • Photoluminescense (PL) of CdTe thin films is present in the 0.8-1.6 eV spectral region. • High intensity excitonic peaks are among the main radiative paths. • Radiative transitions at 1.36x eV are assisted by dislocations caused levels. • Extremal Cd/Te overpressure ratios enhance PL for 1.497 eV, 1.486 eV, 1.474 eV bands. • PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.

  19. The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    Ala J. Al-Douri

    2011-01-01

    Full Text Available Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5 were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K. The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films as Ts increases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2 decreases with increasing Ts and dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasing Ts and upon doping with Al at more than 0.5%. The carrier concentration decreases as Ts increases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

  20. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Science.gov (United States)

    Luo, H.; Ma, L. G.; Xie, W. M.; Wei, Z. L.; Gao, K. G.; Zhang, F. M.; Wu, X. S.

    2016-04-01

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na2TeO3 instead of the usually used TeO2. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells.

  1. Optical and electrical properties of hydrothermally prepared CdTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hadia, N.M.A.; Awad, M.A.; Mohamed, S.H.; Ibrahim, E.M.M. [Sohag University, Physics Department, Faculty of Science, Sohag (Egypt)

    2016-10-15

    The hydrothermal process was used to synthesize CdTe nanowires (NWs). Various analytical techniques were used to characterize the obtained NWs. The wire diameters were in the range 35-60 nm, and the lengths were >5 μm. The CdTe NWs had zinc-blende crystal structure. The NWs had high uniformity and high yield. FTIR analysis revealed the presence of the characteristic vibrational spectra of oxygen and hydrogen bounded to Cd and Te in CdTe NWs. The optical band gap value was 2.09 eV. The CdTe NWs showed a strong red emission band centered around 620.3 nm. The conductivity measurements were carried out in the temperature range 300-500 K and in air atmosphere. Two types of conduction mechanisms were observed with activation energies of 0.27 and 0.17 eV at high and low temperature regions, respectively. These results validate the potential of CdTe NWs for optoelectronic applications. (orig.)

  2. Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

    Institute of Scientific and Technical Information of China (English)

    Li Jin; Yang Linyu; Jian Jikang; Zou Hua; Sun Yanfei

    2009-01-01

    Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrystalline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.

  3. Quantitative determination of uric acid using CdTe nanoparticles as fluorescence probes.

    Science.gov (United States)

    Jin, Dongri; Seo, Min-Ho; Huy, Bui The; Pham, Quoc-Thai; Conte, Maxwell L; Thangadurai, Daniel; Lee, Yong-Ill

    2016-03-15

    A convenient enzymatic optical method for uric acid detection was developed based on the fluorescence quenching of ligand-capped CdTe nanoparticles by H2O2 which was generated from the enzymatic reaction of uric acid. The interactions between the CdTe nanoparticles capped with different ligands (glutathione, 3-mercaptopropionic acid, and thioglycerol) and H2O2 were investigated. The fluorescence quenching studies of GSH-capped CdTe nanoparticles demonstrated an excellent sensitivity to H2O2. The effects of uric acid, uricase and H2O2 on the fluorescence intensity of CdTe nanoparticles were also explored. The detection conditions, reaction time, pH value, incubation period and the concentration of uricase and uric acid were optimized. The detection limit of uric acid was found to be 0.10 µM and the linear range was 0.22-6 µM under the optimized experimental conditions. These results typify that CdTe nanoparticles could be used as a fluorescent probe for uric acid detection.

  4. Luminescent behavior of CdTe quantum dots: Neodymium(III) complex-capped nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Margarida S. [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal); Algarra, Manuel, E-mail: magonzal@fc.up.pt [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal); Jimenez-Jimenez, Jose; Rodriguez-Castellon, Enrique [Departamento de Quimica Inorganica, Facultad de Ciencias, Universidad de Malaga, Campus de Teatinos s/n 29071, Malaga (Spain); Campos, Bruno B.; Esteves da Silva, Joaquim C.G. [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal)

    2013-02-15

    A water soluble complex of neodymium(III) with CdTe quantum dots nanoparticles was synthesized. The obtained homogeneous solutions were characterized by fluorescence, X-ray photoelectron and energy dispersive X-ray spectroscopies. The effect of the refluxing time of the reaction on the fluorescence intensity and emission wavelength has been studied. It was found that the emission wavelength of the solutions of neodymium(III) complex capped CdTe QDs nanoparticles shifted from about 540 to 735 nm. For an emission wavelength of 668 nm, the most reproducible nanoparticles obtained, the pH effect over the fluorescence emission and its intensity were studied. The purified and lyophilized solid obtained was morphologically characterized by transmission electron microscopy (TEM). The quantitative composition was determined by fluorescence X-ray spectroscopy (EDAX) and the X-ray photoelectron analysis (XPS) confirmed the presence of neodymium(III) at the surface of the CdTe nanoparticles forming a complex with the carboxylate groups from 3-mercaptopropanoic acid of the CdTe QDs. Due to the optical behavior of this complex, it could be of potential interest as a light source in optical devices. - Highlights: Black-Right-Pointing-Pointer CdTe quantum dots nanoparticles. Black-Right-Pointing-Pointer Neodymium(III) complexed quantum dots. Black-Right-Pointing-Pointer Strong red fluorescent emission nanomaterial soluble in water.

  5. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, H.; Ma, L.G.; Xie, W.M.; Wei, Z.L.; Gao, K.G.; Zhang, F.M.; Wu, X.S. [Nanjing University, Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructures, School of Physics, Nanjing (China)

    2016-04-15

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na{sub 2}TeO{sub 3} instead of the usually used TeO{sub 2}. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells. (orig.)

  6. Two distinct photoluminescence responses of CdTe quantum dots to Ag (I)

    Energy Technology Data Exchange (ETDEWEB)

    Xia Yunsheng; Cao Chun [Anhui Key Laboratory of Functional Molecular Solids, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, Anhui 241000 (China); Zhu Changqing [Anhui Key Laboratory of Functional Molecular Solids, College of Chemistry and Materials Science, Anhui Normal University, Wuhu, Anhui 241000 (China)], E-mail: zhucq625@163.com

    2008-01-15

    Four sizes of water-soluble thiol-capped CdTe quantum dots (QDs) have been synthesized and used to investigate the photoluminescence (PL) responses to Ag{sup +} ions. For small particles, the CdTe QDs exhibit PL enhancement in the presence of lower concentration of Ag{sup +} but show obvious quenching with the further increase of Ag{sup +}; for larger particles, however, PL of CdTe QDs is quenched all the time with the Ag{sup +} addition, no PL enhancement is observed. Mechanism study shows that small QDs with more traps on the particle surface are effectively passivated by initial adsorbed Ag{sup +}, which accounts for the PL enhancement observed; after the initial traps are saturated, the excess Ag{sup +} facilitates nonradiative recombination, resulting in PL quenching. For larger particles, the nonradiative recombination dominates the whole process even for the lower concentration of Ag{sup +}, due to the fewer traps on the QD surface. Compared with larger particles, the small CdTe QDs are more suitable for sensing Ag{sup +} because of the more sensitive and selective PL response. To our best knowledge, this is the first systematical study on the interaction of Ag{sup +} with different-sized CdTe QDs.

  7. Effects of processing temperature on the thickness of CdS and the performance of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Tetali, B.; Marinskiy, D.; Marinskaya, S.; Morel, D. [Department of Electrical Engineering, Center for Clean Energy and Vehicles, University of South Florida, Tampa, Florida 33620 (United States)

    1997-02-01

    CdTe cells have been fabricated on soda lime glass substrates. The effect of the CdS thickness and CdTe deposition temperature on the spectral response (SR) and solar cell parameters has been studied. The CdTe deposition temperature has been found to be a key processing parameter in determining the extent of interdiffusion at the CdTe and CdS interface. When the deposition of CdTe is carried out at high temperatures a significant portion of the CdS films is {open_quotes}lost{close_quotes} due to interdiffusion which leads to enhancement of the blue response of the solar cells. Devices with identical blue response (400{endash}500 nm) have been fabricated even though the starting CdS thicknesses were different; the cells for which the starting CdS thickness was greater exhibited higher open-circuit voltages and fill factors. {copyright} {ital 1997 American Institute of Physics.}

  8. Time-Resolved Photoluminescence Spectroscopy Evaluation of CdTe and CdTe/CdS Quantum Dots

    OpenAIRE

    Yuan, Zhimin; Yang, Ping; Cao, Yongqiang

    2012-01-01

    CdTe and CdTe/CdS quantum dots (QDs) were prepared in aqueous solutions using thioglycolic acid as a stabilizing agent. The photoluminescence (PL) wavelength of the QDs depended strongly on the size of CdTe cores and the thickness of CdS shells. Being kept at room temperature for 130 days, the PL wavelength of CdTe and CdTe/CdS QDs was red-shifted. However the red-shifted degree of CdTe QDs is larger than that of CdTe/CdS QDs. The size of CdTe QDs and the thickness of CdS play important roles...

  9. Structural and AC conductivity study of CdTe nanomaterials

    Science.gov (United States)

    Das, Sayantani; Banerjee, Sourish; Sinha, T. P.

    2016-04-01

    Cadmium telluride (CdTe) nanomaterials have been synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to cubic structure with the average particle size of 20 nm. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 313 to 593 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The frequency dependence of real and imaginary parts of dielectric permittivity is analyzed using modified Cole-Cole equation. The temperature dependence relaxation time is found to obey the Arrhenius law having activation energy ~0.704 eV. The frequency dependent conductivity spectra are found to follow the power law. The frequency dependence ac conductivity is analyzed by power law.

  10. Recombination by grain-boundary type in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John, E-mail: john.moseley@nrel.gov; Ahrenkiel, Richard K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401 (United States); Metzger, Wyatt K.; Moutinho, Helio R.; Guthrey, Harvey L.; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Paudel, Naba; Yan, Yanfa [Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)

    2015-07-14

    We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB “type.” We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5–49), and general GBs (Σ > 49), which make up ∼47%–48%, ∼6%–8%, and ∼44%–47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%–18% of Σ = 3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl{sub 2}-treated films were studied. The CdCl{sub 2} treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl{sub 2} treatment.

  11. Ion implantation of CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Wiecek Tomasz

    2017-01-01

    Full Text Available Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2. The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  12. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  13. Ion implantation of CdTe single crystals

    Science.gov (United States)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2016-12-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  14. CdTe reflection anisotropy line shape fitting

    Energy Technology Data Exchange (ETDEWEB)

    Molina-Contreras, J.R., E-mail: rmolina@correo.ita.mx [Departamento de Ingenieria Electrica y Electronica, Instituto Tecnologico de Aguascalientes, Av. Lopez Mateos 1801 Ote. Fracc. Bona Gens, Aguascalientes, Ags, 20256 (Mexico)

    2010-10-25

    In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E{sub 1} and E{sub 1} + {Delta}{sub 1} transition region in II-VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.

  15. Study on temperature coefficient of CdTe detector used for X-rays detection

    CERN Document Server

    Guo, Si-Ming; Zhang, Jian; Li, Xu-Fang; Liu, Cong-Zhan; Zhang, Shuai; Li, Cheng-Ze; Huo, Bin-Bin; Liao, Zhen-Yu

    2016-01-01

    The temperature of the working environment is a key factor in determining the properties of semiconductor detectors, and it affects the absolute accuracy and stability of the standard detector. In order to determine the temperature coefficient of CdTe detector used for X-rays detection, a precise temperature control system was designed. In this experiment, detectors and radiographic source were set inside the thermostat with temperature of 0-40 Celsius degree, so that the temperature can be regulated for the test of the temperature coefficient of CdTe detector. Studies had shown that, with the increase of the temperature, the energy resolution and detection efficiency of the CdTe detector would deteriorate, and under 10 Celsius degree the detectors have better performance with the 8 keV X-rays.

  16. Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Burst, James; Guthrey, Harvey L.; Metzger, Wyatt K.

    2016-11-21

    We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.

  17. Advances in the In-House CdTe Research Activities at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T.; Wu, X.; Dhere, R.; Moutinho, H.; Smith, S.; Romero, M.; Zhou, J.; Duda, A.; Corwine, C.

    2005-01-01

    NREL in-house CdTe research activities have impacted a broad range of recent program priorities. Studies aimed at industrially relevant applications have produced new materials and processes that enhance the performance of devices based on commercial materials (e.g., soda-lime glass, SnO2:F). Preliminary tests of the effectiveness of these novel components using large-scale processes have been encouraging. Similarly, electro- and nano-probe techniques have been developed and used to study the evolution and function of CdTe grain boundaries. Finally, cathodoluminescence (CL) and photoluminescence (PL) studies on single-crystal samples have yielded improved understanding of how various processes may combine to produce important defects in CdTe films.

  18. Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

    Science.gov (United States)

    Escobedo, A.; Quinones, S.; Adame, M.; McClure, J.; Zubia, D.; Brill, G.

    2010-04-01

    Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480°C and 540°C, maintaining an average constant source-substrate temperature difference Δ T of ˜130°C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 μm/h to 4 μm/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe(111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.

  19. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    Directory of Open Access Journals (Sweden)

    Hao Xue

    2016-07-01

    Full Text Available Solution-processed CdTe nanocrystals (NCs photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values comparable to those of commercial thin film CdTe/CdS solar cells fabricated by the close-space sublimation (CSS method. Here we review the progress and prospects in this field, focusing on new insights into CdTe NCs synthesized, device fabrication, NC solar cell operation, and how these findings give guidance on optimizing solar cell performance.

  20. Sulfur diffusion in polycrystalline thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aslan, M.H.; Song, W.; Tang, T.; Mao, D.; Collins, R.T. [Colorado School of Mines, Golden, CO (United States). Physics Dept.; Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Lindstrom, S.C.; Johnson, M.B. [Univ. of Oklahoma, Norman, OK (United States)

    1998-12-31

    X-ray diffraction and photoluminescence measurements have been used to characterize the diffusion of S into CdTe during post growth annealing of CdTe solar cells. For anneals at 410 C in the presence of CdCl{sub 2}, evidence that both a CdTe{sub 1{minus}x}S{sub x} phase and nearly-pure CdTe are present near the back contact is observed. The ternary phase becomes more prominent and the S concentration increases with depth reaching roughly 4--5% near the CdS interface. Much less diffusion is observed at 350 C while for a 460 C anneal, CdTe{sub 1{minus}x}S{sub x} with a S concentration near 5% is found throughout the layer. The presence of CdCl{sub 2} during the anneal enhances the interdiffusion.

  1. CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

    Directory of Open Access Journals (Sweden)

    Ghasem Rezanejade Bardajee

    2013-01-01

    Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

  2. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  3. Simulation of active-edge pixelated CdTe radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Duarte, D.D., E-mail: diana.duarte@stfc.ac.uk [STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Lipp, J.D.; Schneider, A.; Seller, P.; Veale, M.C.; Wilson, M.D. [STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Baker, M.A.; Sellin, P.J. [Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2016-01-11

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  4. The next generation CdTe technology- Substrate foil based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, Chris [Univ. of South Florida, Tampa, FL (United States)

    2017-03-22

    The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal of this project) a roll-to-toll high throughput technology could be developed.

  5. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R. (Colorado State Univ., Fort Collins, CO (United States))

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  6. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Science.gov (United States)

    Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.; Kuciauskas, Darius; Metzger, Wyatt K.

    2016-11-01

    CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  7. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Directory of Open Access Journals (Sweden)

    James M. Burst

    2016-11-01

    Full Text Available CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm−3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  8. Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Choi Hyojeong

    2016-09-01

    Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

  9. CdTe介质膜与HgCdTe晶片间界面特性的研究%STUDY OF THE INTERFACE OF THE SPUTTERING CdTe DIELECTRIC FILM AND HgCdTe CRYSTAL

    Institute of Scientific and Technical Information of China (English)

    周咏东; 赵军; 李言谨; 方家熊

    2000-01-01

    利用Ar+束溅射沉积技术在HgCdTe表面低温生长了CdTe介质薄膜.分别用CdTe介质膜和HgCdTe自身阳极氧化膜对HgCdTe表面钝化.利用光电导衰退信号波形的拟合,得到了不同表面钝化的HgCdTe非平衡载流子表面复合速度.结果表明,CdTe/HgCdTe界面质量已超过自身阳极氧化膜/HgCdTe界面质量.

  10. The use of CdTe detectors for dental X-ray spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Marcus Aurelio P. dos; Fragoso, Maria da Conceicao F.; Oliveira, Mercia L.; Lima, Ricardo de A.; Hazin, Clovis A. [Centro Regional de Ciencias Nucleares (CRCN/CNEN-PE), Recife, PE (Brazil)]. E-mails: masantos@cnen.gov.br; mariacc05@yahoo.com.br; mercial@cnen.gov.br; ralima@cnen.gov.br; chazin@cnen.gov.br

    2007-07-01

    he cadmium telluride (CdTe) semiconductor detector provides high detection efficiency for use in the diagnostic x-rays energy range, because of the high atomic number and high density of the crystal. Moreover, it has the great advantage of working at room temperature, in contrast to the germanium detector, which operates in liquid nitrogen temperature. The CdTe detector has been utilized in diagnostic x-ray spectroscopy, but only scarce information about its use in dental X-ray beams has been published. In this way, a portable 3x3x1 mm{sup 3} CdTe solid state detector (XR-100T CdTe by Amptek, Inc.) with tungsten pinhole collimators, alignment device and associated software was utilized in this work for measuring the photon spectra in the dental x-ray kVp range. A single-phase dental unit with adjustable kVp and mA was employed and the x-ray spectra were experimentally determined at 50, 60 and 70 kVp with 0.5 mA tube current. The pulse height distribution obtained with this detector, however, does not represent the 'true' photon spectra. For this reason, a stripping procedure was implemented to correct the distribution in order to determine the real photon spectra. The x-ray spectra obtained with the CdTe detector were compared with the ones measured with a high-purity germanium detector (EGP200-13-TR by Eurisys Mesures). The reasonable agreement between the results obtained with both detectors for the 50 to 70 keV range show that CdTe detectors can be utilized for dental x-ray spectrometry. (author)

  11. Facile method to prepare CdS nanostructure based on the CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ligang; Chen, Yuehui; Wei, Zelu; Cai, Hongling; Zhang, Fengming; Wu, Xiaoshan, E-mail: xswu@nju.edu.cn

    2015-09-15

    Graphical abstract: - Highlights: • CdS nanostructure is directly fabricated on CdTe film only by heating treatment under H{sub 2}S/N{sub 2} mixed atmosphere at a relatively low temperature (450 °C) with gold layer as the intermediate. • Nanostructure of CdS layer, varying from nanowires to nanosheets, may be controlled by the thickness of gold film. • The change of morphology adjusts its luminescence properties. - Abstract: Nanostructured cadmium sulfide (CdS) plays critical roles in electronics and optoelectronics. In this paper, we report a method to fabricate CdS nanostructure directly on CdTe film, via a thermal annealing method in H{sub 2}S/N{sub 2} mixed gas flow at a relatively low temperature (450 °C). The microstructure and optical properties of CdS nanostructure are investigated by X-ray diffraction, transmission electron microscopy, Raman, and photoluminescence. The morphology of CdS nanostructure, evolving from nanowires to nanosheets, can be controlled by the thickness of Au film deposited on the CdTe film. And CdS nanostructures are single crystalline with the hexagonal wurtzite structure. Raman spectroscopy under varying the excitation wavelengths confirm that synthesized CdS-CdTe films contain two layers, i.e., CdS nanostructure (top) and CdTe layer (bottom). The change of morphology modifies its luminescence properties. Obviously, through simply thermal annealing in H{sub 2}S/N{sub 2} mixed gas, fabricating CdS nanostructure on CdTe film can open up the new possibility for obtaining high efficient CdTe solar cell.

  12. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  13. Preparation and multicolored fluorescent properties of CdTe quantum dots/polymethylmethacrylate composite films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanni; Liu, Jianjun, E-mail: jjliu717@aliyun.com; Yu, Yingchun; Zuo, Shengli

    2015-10-25

    A new simple route was presented for the preparation of stable fluorescent CdTe/polymethylmethacrylate (CdTe/PMMA) composite films by using hydrophilic thioglycolic acid capped CdTe quantum dots (TGA-CdTe QDs) and polymethylmethacrylate (PMMA) as raw materials. The TGA-CdTe QDs were firstly exchanged with n-dodecanethiol (DDT) to become hydrophobic DDT-CdTe QDs via a ligand exchange strategy, and then incorporated into PMMA matrix to obtain fluorescent CdTe/PMMA composite films. The structure and optical properties of DDT-CdTe QDs and CdTe/PMMA composite films were investigated by XRD, IR, UV and PL techniques. The results indicated that the obtained DDT-CdTe QDs well preserved the intrinsic structure and the maximum emission wavelength of the initial water-soluble QDs and the resulting 6.10 wt% CdTe/PMMA composite film exhibited significantly enhanced PL intensity. Furthermore, the multicolored composite films with green, yellow-green, yellow and orange light emissions were well tuned by incorporating the CdTe QDs of various maximum emission wavelengths. The TEM image demonstrated that the CdTe QDs were well-dispersed in the PMMA matrix without aggregation. Superior photostability of QDs in the composite film was confirmed by fluorescence lifetime measurement. Thermo-gravimetric analysis of CdTe/PMMA composite films showed no obvious enhancement of thermal stability compared with pure PMMA. - Highlights: • Ligand-exchange strategy was used to render CdTe QDs oil-soluble. • CdTe QDs were incorporated into PMMA matrix to fabricate fluorescent films. • The resulting 6.10 wt% CdTe/PMMA film exhibited significantly enhanced PL intensity. • Fluorescent colors of films were tuned by varying the λ{sub em} of incorporated CdTe QDs.

  14. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  15. High-resolution CdTe detectors with application to various fields (Conference Presentation)

    Science.gov (United States)

    Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

    2016-10-01

    High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

  16. Post-growth CdCl₂ treatment on CdTe thin films grown on graphene layers using a close-spaced sublimation method.

    Science.gov (United States)

    Jung, Younghun; Yang, Gwangseok; Chun, Seungju; Kim, Donghwan; Kim, Jihyun

    2014-05-05

    We investigated the morphological, structural and optical properties of CdCl₂-treated cadmium telluride (CdTe) thin films deposited on defective graphene using a close-spaced sublimation (CSS) system. Heat treatment in the presence of CdCl₂ caused recrystallization of CSS-grown CdTe over the as-deposited structures. The preferential (111) orientation of as-deposited CdTe films was randomized after post-growth CdCl₂ treatment. New small grains (bumps) on the surface of CdCl₂-treated CdTe films were ascribed to nucleation of the CdTe grains during the CdCl₂ treatment. The properties of as-deposited and CdCl₂-treated CdTe films were characterized by room temperature micro-photoluminescence, micro-Raman spectroscopy, scanning electron microscopy, and X-ray diffraction analysis. Our results are useful to demonstrate a substrate configuration CdTe thin film solar cells.

  17. Characterization and simulation of a CdTe detector for use in PET

    OpenAIRE

    Ariño Estrada, Gerard; Chmeissani, Mokhtar; Lorenzo, Gianluca De

    2012-01-01

    The Voxel Imaging PET (VIP) Path nder project got the 4 year European Research Council FP7 grant in 2010 to prove the feasibility of using CdTe detectors in a novel conceptual design of PET scanner. The work presented in this thesis is a part of the VIP project and consists of, on the one hand, the characterization of a CdTe detector in terms of energy resolution and coincidence time resolution and, on the other hand, the simulation of the setup with the single detector in order to extend the...

  18. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors

    OpenAIRE

    Y Calderón; Chmeissani, M.; Kolstein, M.; De Lorenzo, G.

    2014-01-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm2 area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm3. The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(G...

  19. Electronic structure, structural and optical properties of thermally evaporated CdTe thin films

    OpenAIRE

    S Lalitha; Karazhanov, S. Zh.; Ravindran, P.; Senthilarasu, S.; Sathyamoorthy, R.; Janabergenov, J.

    2006-01-01

    Thin films of CdTe were deposited on glass substrates by thermal evaporation. From the XRD measurements itis found that the films are of zinc-blende-type structure. Transmittance, absorption, extinction, and refractive coefficients are measured. Electronic structure, band parameters and optical spectra of CdTe were calculated from ab initio studies within the LDA and LDA+U approximations. It is shown that LDA underestimates the band gap, energy levels of the Cd-4d states, s-d coupling and ban...

  20. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    Science.gov (United States)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Mayo, B.; Levi, D. H.; Kazmerski, L. L.

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 °C and completely recrystallized after the same treatment at 400 °C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  1. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    OpenAIRE

    Hao Xue; Rongfang Wu; Ya Xie; Qiongxuan Tan; Donghuan Qin; Hongbin Wu; Wenbo Huang

    2016-01-01

    Solution-processed CdTe nanocrystals (NCs) photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values compar...

  2. Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

    OpenAIRE

    Es'haghi Gorji, Nima

    2014-01-01

    CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized wat...

  3. Properties of CdTe layers deposited by a novel method -Pulsed Plasma Deposition

    OpenAIRE

    Ancora, C.; Nozar, P.; Mittica, G.; Prescimone, F.; A. Neri; Contaldi, S.; Milita, S.; Albonetti, C.; Corticelli, F.; Brillante, A.; Bilotti, I.; Tedeschi, G.; Taliani, C.

    2011-01-01

    CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. ...

  4. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    OpenAIRE

    Zulkarnain Zainal; Mohd Norizam Md Daud; Azmi Zakaria; Mohd Sabri Mohd Ghazali; Atefeh Jafari; Wan Rafizah Wan Abdullah

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the ...

  5. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, Baton Rouge, LA)

    1998-10-26

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  6. Rf sputtering of CdTE and CdS for thin film PV

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Tabory, C.N.; Shao, M.; Fischer, A.; Feng, Z.; Bohn, R.G. (Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States))

    1994-06-30

    In late 1992 we demonstrated the first rf sputtered CdS/CdTe photovoltaic cell with efficiency exceeding 10%. In this cell both CdS and CdTe layers were deposited by rf sputtering. In this paper we report preliminary measurements of (1) optical emission spectroscopy of the rf plasma, (2) the width of the phonon Raman line as a function of deposition temperature for CdS, and (3) studies of oxygen doping during pulsed laser deposition of CdTe.

  7. The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

    OpenAIRE

    Al-Douri, Ala J.; Al-Shakily, F. Y.; Alnajjar, Abdalla A.; Maysoon F. A. Alias

    2011-01-01

    Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdT...

  8. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  9. Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics

    Science.gov (United States)

    Mendis, B. G.; Gachet, D.; Major, J. D.; Durose, K.

    2015-11-01

    A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps ) within the grains and are rapidly quenched at the grain boundary. However, a ˜47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.

  10. Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform

    CERN Document Server

    Kikawa, T; Hiraki, T; Nakaya, T

    2011-01-01

    Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

  11. The role of stress in CdTe quantum dot doped glasses

    Science.gov (United States)

    de Thomaz, A. A.; Almeida, D. B.; Pelegati, V. B.; Carvalho, H. F.; Moreira, S. G. C.; Barbosa, L. C.; Cesar, C. L.

    2016-11-01

    In this work, we unequivocally demonstrate the influence of matrix-related stresses on quantum dots by measuring, side by side, a CdTe quantum dot doped glass and a colloidal sample with similar sizes. We measured the fluorescence spectra and fluorescence lifetime for both samples as a function of the temperature. We show that the expansion coefficient mismatch between CdTe quantum dots and the glass host causes stresses and drastically changes its behavior compared to its colloidal counterpart, even leading to phase transitions. This finding indicates that most experimental data on glass-doped quantum dots used to validate confinement models should be revised, taking stress into account.

  12. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, LA)

    1998-10-29

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  13. Compensation models in chlorine doped CdTe based on positron annihilation and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stadler, W.; Hofman, D.M.; Meyer, B.K. [Technische Universitaet Muenchen, Garching (Germany); Krause-Rehberg, R.; Polity, A.; Abgarjan, Th. [Martin-Luther Universitaet Halle-Wittenberg, FB Physik, Halle (Germany); Salk, M.; Benz, K.W. [Kristallographisches Institut, Universitaet Freiburg, Freiburg (Germany); Azoulay, M. [Soreq, Nuclear Research Centre, Yavne (Israel)

    1995-12-31

    In this investigation positron annihilation, photoluminescence and electron paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explain by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electron paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy. (author). 9 refs, 2 figs, 1 tab.

  14. Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2015-01-01

    Full Text Available This paper presents experiment measurements of minority carrier lifetime using three different methods including modified open-circuit voltage decay (PIOCVD method, small parallel resistance (SPR method, and pulse recovery technique (PRT on pn junction photodiode of the HgCdTe photodetector array. The measurements are done at the temperature of operation near 77 K. A saturation constant background light and a small resistance paralleled with the photodiode are used to minimize the influence of the effect of junction capacitance and resistance on the minority carrier lifetime extraction in the PIOCVD and SPR measurements, respectively. The minority carrier lifetime obtained using the two methods is distributed from 18 to 407 ns and from 0.7 to 110 ns for the different Cd compositions. The minority carrier lifetime extracted from the traditional PRT measurement is found in the range of 4 to 20 ns for x=0.231–0.4186. From the results, it can be concluded that the minority carrier lifetime becomes longer with the increase of Cd composition and the pixels dimensional area.

  15. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    Science.gov (United States)

    He, Kai; Zhou, Song-Min; Li, Yang; Wang, Xi; Zhang, Peng; Chen, Yi-Yu; Xie, Xiao-Hui; Lin, Chun; Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao

    2015-05-01

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V F B = - 5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R 0 A product and corresponding dark current calculated from the proposed model as functions of the gate voltage Vg demonstrate good consistency with the measured values. The R 0 A product remarkably degenerates when Vg is far below or above VFB because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7 × 10 7 Ω . cm 2 around the transition between surface depletion and weak inversion when V g ≈ - 4 V , which might result from reduced generation-recombination current.

  16. Development of non-hybridised HgCdTe detectors for the next generation of astronomical instrumentation

    Science.gov (United States)

    Dalton, Gavin B.; Dennis, Peter N.; Lees, David J.; Hall, David J.; Cairns, John W.; Gordon, Neil T.; Hails, Janet E.; Giess, Jean

    2008-07-01

    The superb image quality that is predicted, and even demanded, for the next generation of Extremely Large Telescopes (ELT) presents a potential crisis in terms of the sheer number of detectors that may be required. Developments in infrared technology have progressed dramatically in recent years, but a substantial reduction in the cost per pixel of these IR arrays will be necessary to permit full exploitation of the capabilities of these telescopes. Here we present an outline and progress report of an initiative to develop a new generation of astronomical grade Cadmium Mercury Telluride (HgCdTe) array detectors using a novel technique which enables direct growth of the sensor diodes onto the Read Out Integrated Circuit (ROIC). This technique removes the need to hybridise the detector material to a separate Silicon readout circuit and provides a route to very large monolithic arrays. We present preliminary growth and design simulation results for devices based on this technique, and discuss the prospects for deployment of this technology in the era of extremely large telescopes.

  17. TEQUILA: NIR camera/spectrograph based on a Rockwell 1024x1024 HgCdTe FPA

    Science.gov (United States)

    Ruiz, Elfego; Sohn, Erika; Cruz-Gonzales, Irene; Salas, Luis; Parraga, Antonio; Perez, Manuel; Torres, Roberto; Cobos Duenas, Francisco J.; Gonzalez, Gaston; Langarica, Rosalia; Tejada, Carlos; Sanchez, Beatriz; Iriarte, Arturo; Valdez, J.; Gutierrez, Leonel; Lazo, Francisco; Angeles, Fernando

    1998-08-01

    We describe the configuration and operation modes of the IR camera/spectrograph: TEQUILA based on a 1024 X 1024 HgCdTe FPA. The optical system will allow three possible modes of operation: direct imaging, low and medium resolution spectroscopy and polarimetry. The basic system is being designed to consist of the following: 1) A LN(subscript 2) dewar that allocates the FPA together with the preamplifiers and a 24 filter position cylinder. 2) Control and readout electronics based on DSP modules linked to a workstation through fiber optics. 3) An opto-mechanical assembly cooled to -30 degrees that provides an efficient operation of the instrument in its various modes. 4) A control module for the moving parts of the instrument. The opto-mechanical assembly will have the necessary provision to install a scanning Fabry-Perot interferometer and an adaptive optics correction system. The final image acquisition and control of the whole instrument is carried out in a workstation to provide the observer with a friendly environment. The system will operate at the 2.1 m telescope at the Observatorio Astronomico Nacional in San Pedro Martir, B.C. (Mexico), and is intended to be a first-light instrument for the new 7.8m Mexican IR-Optical Telescope.

  18. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    Science.gov (United States)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  19. Characterization and photoluminescence studies of CdTe nanoparticles before and after transfer from liquid phase to polystyrene

    Indian Academy of Sciences (India)

    Shugang Wang; Yaoxian Li; Jie Bai; Qingbiao Yang; Yan Song; Chaoqun Zhang

    2009-10-01

    The major objective of this work was to detect the change of photoluminescence (PL) intensity of CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electrospinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyltrimethylammonium bromide (CTAB), and finally, transferred into PS matrix to form CdTe/PS nanofibres by electrospinning. Then, CdTe/PS nanofibres were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM) to observe their morphology and distribution, respectively. The selective area electronic diffraction (SAED) pattern proved that the CdTe NPs were cubic lattice. The PL spectrum indicated that CdTe NPs have been transferred into PS nanofibres, and the PL intensity of CdTe NPs in the nanofibres was even higher than that before CdTe NPs were introduced into PS nanofibres. Moreover, X-ray photoelectron spectra (XPS) revealed that thiol-stabilized CdTe NPs were enwrapped by CTAB, and PS acted as a dispersant in the process of electrospinning.

  20. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    Science.gov (United States)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  1. K-edge EXAFS and XANES studies of Cu in CdTe thin-film solar cells

    Science.gov (United States)

    Liu, Xiangxin; Gupta, Akhlesh; Compaan, Alvin D.; Leyarovska, Nadia; Terry, Jeff

    2002-03-01

    Copper has been identified as a very important dopant element in CdTe thin-film solar cells. Cu is a deep acceptor in CdTe and is commonly used to obtain a heavily doped, low resistance back contact to polycrystalline CdTe. Cu also helps to increase the open circuit voltage of the cell. However, Cu is also a fast diffuser in CdTe, especially along grain boundaries, and can accumulate at the CdS/CdTe junction. It is suspected of leading to cell performance degradation in some cases. The present study is designed to help identify the lattice location of the Cu in CdTe. Cu K-edge, x-ray absorption (XAS) measurements were conducted on Cu in thin films of CdTe. Experiments were performed at the MR-CAT beamline at the Advanced Photon Source. The 3 mm CdTe layers were magnetron sputtered onto fused silica substrates. Some films were diffused with Cu from a 200 Å layer of evaporated Cu. XAS spectra were collected in fluorescence geometry with a 13 elements Ge detector. Quantitative fluorescence spectroscopy measurements were also performed. Details of the Cu environment and possible changes with time will be reported.

  2. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    Science.gov (United States)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-10-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  3. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 µm

    Science.gov (United States)

    Amin, Nowshad; Isaka, Takayuki; Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    1999-08-01

    This study focuses on the technique for the stable growth of CdTe (1.44 eV) with thickness near its absorption length, 1 µm, by close spaced sublimation (hereafter CSS) process, in order to achieve high conversion efficiency. X-ray diffraction (XRD) spectroscopy was carried out to examine the microstructure of the films. Current-voltage (I V) characteristics, spectral response and other features of the solar cells using these CdTe films were investigated to elucidate the optimum conditions for achieving the best performance in such thin (1 µm) CdTe solar cells. Thickness was found to be reduced by controlling the temperature profile used during CSS growth. The temperature profile was found to be an important factor in growing high-quality thin films. By controlling the growth parameters and optimizing the annealing temperature at different fabrication steps, we have succeeded, to date, in achieving cell efficiencies of 14.3% (open-circuit voltage (Voc): 0.82 V, short-circuit current (Jsc): 25.2 mA/cm2, fill factor (F.F.): 0.695, area: 1 cm2) with 5 µm, 11.4% (Voc: 0.77 V, Jsc: 23.7 mA/cm2, F.F.: 0.63, area: 1 cm2) with 1.5 µm and 11.2% (Voc: 0.77 V, Jsc: 23.1 mA/cm2, F.F.: 0.63, area: 1 cm2) with only 1 µm of CdTe layer thickness at an air mass of 1.5 without antireflection coatings. This is important for establishing a strong foundation before developing a new structure (e.g., glass/ITO/CdS/CdTe/ZnTe/Ag configuration) with a back surface field of wide-bandgap material (e.g., ZnTe).

  5. Superior stability of ultra thin CdTe solar cells with simple Cu/Au back contact

    Energy Technology Data Exchange (ETDEWEB)

    Rimmaudo, Ivan; Salavei, Andrei; Xu, Bing Lei; Di Mare, Simone; Romeo, Alessandro, E-mail: alessandro.romeo@univr.it

    2015-05-01

    Due to its high scalability and low production cost, CdTe has shown a significant potential for high mass production, resulting to be one of the cheapest photovoltaic technologies available. Efficiencies exceeding 20% have been obtained by the application of high temperature CdTe deposition. However tellurium scarcity is a limitation for mass production and one of the possibilities to overcome this is the reduction of absorber thickness. We have already demonstrated efficiencies above 11% for devices with 1.5 μm thick CdTe. Nowadays we have fabricated ultra-thin absorber devices performing more than 13% efficiencies. But what is most interesting is that we have observed a different electrical operation and stability, connected to the fact that the depletion region takes a very large part of the device. In this work many CdTe solar cells with a standard Cu/Au back contact, made with different absorber thicknesses, were prepared, stored in dark and tested at different aging times, showing different reactions to the aging and in particular a remarkable stability as CdTe thickness reduces. - Highlights: • CdTe/CdS devices with 0.7, 1 and 1.8 μm thick absorbers have been prepared. • Superior stability in dark aging of ultra thin CdTe devices has been registered. • Electrical analysis shows different behaviors and nature of defects for thin CdTe samples. • For 6 μm CdTe samples degradation is driven mainly by defect compensation. • For ultra thin CdTe samples, degradation is dominated by impurities from the front contact.

  6. Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry

    Science.gov (United States)

    Murthy, Srikanteswara Dakshina; Bhat, Ishwara; Johs, Blaine; Pittal, Shakil; He, Ping

    1995-09-01

    The use of spectroscopic ellipsometry for monitoring the vapor phase epitaxial growth of mercury cadmium telluride (Hg1-xCdxTe) in real-time is demonstrated. The ellipsometer is used to perform system identification of the chemical vapor deposition reactor used for the growth of CdTe and to measure the response of the reactor to different growth conditions. The dynamic behavior of the reactor is also studied by evaluating the gas transport delay. The optical constants of Hg1-xCdxTe are determined at the growth temperature for different compositions. In-situ real-time composition control is performed during the growth of Hg1-xCdxTe. The required target compositions are attained by the ellipsometer and appropriate corrections are also made by the controller when a noise input in the form of a temperature variation is introduced.

  7. 长波碲镉汞材料 As 掺杂激活研究%Research on arsenic-doping activation in LW HgCdTe

    Institute of Scientific and Technical Information of China (English)

    张舟; 陈慧卿; 朱西安

    2015-01-01

    Arsenic-doped long-wavelength HgCdTe was realized by ion implantation.As doping medium,arsenic shows amphiprotic doping property.When Arsenic only occupies Te-site to be acceptor,P type HgdTe material can be formed.After the arsenic-doped HgCdTe is annealed in the mercury atmosphere,the change of electrical property which is caused by annealing is analyzed.And the effect of mercury pressure,temperature and time on arsenic activa-tion is studied.The activation effect is analyzed by Hall measurement and SIMS.In the end,when the arsenic-doped HgCdTe is annealed in the high temperature and high mercury atmosphere,arsenic activation is achieved.%利用离子注入工艺实现长波碲镉汞材料的 As 掺杂,As 作为掺杂介质表现出两性掺杂行为,而 As 只有占据 Te 位成为受主才能形成 P 型碲镉汞材料。通过对砷掺杂碲镉汞材料在汞气氛中进行退火,分析注入退火引起的样品电学性质的变化,对砷激活退火采用的汞压、温度及时间进行了研究,利用霍尔测试和二次离子质谱仪(SIMS)等手段分析激活效果,研究发现,高温富汞热退火可以实现碲镉汞 As 激活。

  8. Assembly of light-emitting diode based on hydrophilic CdTe quantum dots incorporating dehydrated silica gel.

    Science.gov (United States)

    Du, Jinhua; Wang, Chunlei; Xu, Xiaojing; Wang, Zhuyuan; Xu, Shuhong; Cui, Yiping

    2016-03-01

    Stable photoluminescence QD light-emitting diodes (QD-LEDs) were made based on hydrophilic CdTe quantum dots (QDs). A quantum dot-inorganic nanocomposite (hydrophilic CdTe QDs incorporating dehydrated silica gel) was prepared by two methods (rotary evaporation and freeze drying). Taking advantage of its viscosity, plasticity and transparency, dehydrated silica gel could be coated on the surface of ultraviolet (UV) light LEDs to make photoluminescence QD-LEDs. This new photoluminescence QD-LED, which is stable, environmentally non-toxic, easy to operate and low cost, could expand the applications of hydrophilic CdTe QDs in photoluminescence. Copyright © 2015 John Wiley & Sons, Ltd.

  9. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires.

    Science.gov (United States)

    Neretina, S; Hughes, R A; Devenyi, G A; Sochinskii, N V; Preston, J S; Mascher, P

    2008-05-07

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires.

  10. Formation of DX-centers in indium doped CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Tuerker, M.; Kronenberg, J.; Deicher, M., E-mail: manfred.deicher@tech-phys.uni-sb.de; Wolf, H.; Wichert, Th. [Universitaet des Saarlandes, Technische Physik (Germany)

    2007-06-15

    In CdTe, the achievable n-type doping is limited by the formation of DX-centers. A characteristic feature of DX-centers is the 'persistent photoconductivity (PPC)' which is created by illumination at low temperatures and caused by a metastable state of the DX-center. The DX-center and the PPC effect in n-type CdTe are theoretically explained by the 'large lattice relaxation model'. PAC measurements on In doped CdTe using {sup 111}In/{sup 111}Cd and, in addition, resistivity measurements on the same samples have been performed. Below 150 K, the samples showed a PPC effect that was accompanied by an increase of about 20% of the carrier concentration. This effect is not accompanied by any changes of the observed EFG. Possible explanations of the EFG observed, originally assigned to the DX-center, will be discussed. Finally, first reports on the investigation of DX-centers in CdTe using the radioactive isotope {sup 117}Cd decaying to {sup 117}In are presented.

  11. Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

    2014-07-15

    Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    Energy Technology Data Exchange (ETDEWEB)

    Siepchen, B., E-mail: bastian.siepchen@ctf-solar.com [CTF Solar GmbH, Industriestraße 2, 65779 Kelkheim (Germany); Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M. [CTF Solar GmbH, Industriestraße 2, 65779 Kelkheim (Germany); Bossert, S.; Grimm, M. [Roth and Rau AG, An der Baumschule 6-8, 09337 Hohenstein-Ernstthal (Germany); Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H. [Fraunhofer Institute for Electron Beam and Plasma Technology FEP, Winterbergstrasse 28, 01277 Dresden (Germany)

    2013-05-01

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb{sub 2}Te{sub 3} based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb{sub 2}Te{sub 3} back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section.

  13. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    Science.gov (United States)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  14. Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

    Indian Academy of Sciences (India)

    Ziaul Raza Khan; M Zulfequar; Mohd Shahid Khan

    2012-04-01

    Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10-5 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV–VIS–NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1.47–1.50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.

  15. Studies of recrystallization of CdTe thin films after CdCl{sub 2} treatment

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Al-Jassim, M.M.; Abulfotuh, F.A.; Levi, D.H.; Dippo, P.C.; Dhere, R.G.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States)

    1997-12-31

    CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl{sub 2} at 350 and 400 C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 C CdCl{sub 2} treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 C were completely recrystallized and grain growth was observed. The formation of Cd(S{sub 1{minus}x}Te{sub x}) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl{sub 2} treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 C, probably due to elimination of deep levels within the band gap.

  16. Physical properties of Bi-doped CdTe thin films deposited by cosputtering

    Energy Technology Data Exchange (ETDEWEB)

    Becerril, M.; Zelaya-Angel, O. [Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 Mexico D.F. (Mexico); Vigil-Galan, O.; Contreras-Puente, G.; Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D.F. (Mexico)

    2007-03-15

    The structural, morphological, electrical, and optical properties of CdTe-Bi cosputtered thin films related with composition are presented. The films were grown on Corning glass substrates at room temperature from a CdTe-Bi target. The composition measurements show that the Bi content in the films ranges from x = 0.0 to x = 6.37 at%, depending on the area fraction covered by the Bi piece attached to the CdTe target. The structure of the annealed films was determined from X-ray diffraction measurements. Two kinds of structures were observed, depending on the Bi content: (1) CdTe polycrystalline films containing a small amount of Bi that is probably incorporated in the Cd and Te sites of the CdTe lattice. (2) Amorphization of the polycrystalline films, with higher Bi content. From the experimental results, we concluded that using this deposition method n/p-type Bi-doped CdTe polycrystalline films can be produced with electrical resistivity between 10{sup 2}-10{sup 3} {omega} cm and electron mobility between 10{sup 1} and 10{sup 2} cm{sup 2}V{sup -1}s{sup -1}. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  18. Characterization of a pixelated CdTe Timepix detector operated in ToT mode

    Science.gov (United States)

    Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

    2017-01-01

    A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55 μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241Am source, photons from a 137Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300 μm thick silicon Timepix device. The electron mobility-lifetime product (μeτe) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

  19. Application of Lithium Chloride Dopant in Fabrication of CdTe Solar Cells

    Science.gov (United States)

    Xu, Hang; Zeng, Guanggen; Feng, Lianghuan; Wu, Lili; Liu, Cai; Ren, Shengqiang; Li, Kang; Li, Bing; Li, Wei; Wang, Wenwu; Zhang, Jingquan

    2017-02-01

    We report use of lithium chloride (LiCl) as a non-Cd dopant to deal with the environmental issues associated with use of traditional CdCl2 dopant in CdTe solar cells. It has been found that, after LiCl treatment, device performance parameters including external quantum efficiency and conversion efficiency were improved considerably, being comparable to those of a counterpart treated with CdCl2. The optimal efficiency of 9.58% was obtained at 405°C, and V oc as high as ˜737.3 mV was obtained at 385°C. Thorough study of the properties of the CdTe film treated by LiCl by x-ray diffraction analysis, scanning electron microscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectroscopy further verified the feasibility of posttreatment with nontoxic LiCl for fabrication of CdTe photovoltaic devices. The doping level of p-type CdTe thin film was improved by lithium. This represents a nontoxic approach for fabrication of commercial CdS/CdTe thin-film solar cells with better performance.

  20. Transparent Ohmic Contacts for Solution-Processed, Ultrathin CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; Nanayakkara, Sanjini U.; Pach, Gregory F.; Reese, Matthew O.; Hudson, Margaret H.; Dolzhnikov, Dmitriy S.; Tanygin, Vadim; Luther, Joseph M.; Talapin, Dmitri V.

    2017-01-13

    Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. We used scanning Kelvin probe microscopy to further show how the above approaches improved carrier collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A2CdTe2 (A = Na, K, Cs, N2H5), can be used in conjunction with current/light soaking to improve PCE further.

  1. Effects of heat treatment on diffusion of Cu atoms into CdTe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Soo, Y. L. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Huang, S. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Kim, S. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Kioseoglou, G. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Kao, Y. H. [Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States); Compaan, A. D. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Grecu, D. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Albin, D. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    2000-06-19

    Angular dependence of x-ray fluorescence and x-ray absorption fine structure techniques have been used to study the diffusion of Cu atoms into the photovoltaic material CdTe. Depth profile, effective valency, and local structure of Cu atoms in a Cu-doped single crystal of CdTe were investigated before and after a second heat treatment. Enhanced Cu diffusion into the CdTe single crystal was observed as a result of heating at a moderate temperature around 200 degree sign C, resulting in a redistribution of the Cu impurities through a broader depth profile. Some of the Cu atoms are believed either to form small complexes with Te or occupy interstitial sites in the host but accompanied by a large local lattice distortion while others substitute for Cd on the cation sites. The results thus demonstrate that these nondestructive x-ray characterization methods are useful for probing microstructural changes in CdTe photovoltaic materials/devices in which some Cu-containing compounds are used as back contacts. (c) 2000 American Institute of Physics.

  2. A direct solution deposition approach to CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Miskin, Caleb K.; Dubois-Camacho, Angela; Reese, Matthew O.; Agrawal, Rakesh

    2016-01-01

    A direct solution deposition approach to CdTe thin films is presented. The difficulty of co-dissolving Te and desirable Cd salts is overcome through a diamine-thiol solvent mixture. Thin films of densely-packed, micron-sized grains are achieved after annealing without the need for chalcogen or CdCl2 vapor treatments.

  3. Three-dimensional defects in CdTe films obtained by pulsed laser deposition

    NARCIS (Netherlands)

    Sagan, P; Virt, IS; Zawislak, J; Rudyj, IO; Kuzma, M

    2004-01-01

    The quality of Cd chalcodenides epitaxial films can be enhanced seriously by applying a pulsed (electron beam or laser beam) method for ablation of targets. The structure of laser deposited CdTe layers was investigated by transmission high energy electron diffraction. This method is very useful for

  4. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    Science.gov (United States)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  5. Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices

    Science.gov (United States)

    Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea

    To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.

  6. Growth and fabrication method of CdTe and its performance as a radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hyojeong [Korea Atomic Energy Research Institute, Jeong-eup (Korea, Republic of); Sungkyunkwan University, Suwon (Korea, Republic of); Jeong, Manhee; Kim, Hansoo; Kim, Youngsoo; Ha, Jangho [Korea Atomic Energy Research Institute, Jeong-eup (Korea, Republic of); Chai, Jong-Seo [Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-01-15

    A CdTe crystal ingot doped with 2000 ppm of Cl was grown by using the low-pressure Bridgman (LPB) method at the Korea Atomic Energy Research Institute (KAERI). A Semiconductor detector as a radiation detection sensor with a size of 7 (W) x 6.5 (D) x 2 (H) mm{sup 3} was fabricated from the CdTe ingot. In addition, the properties of the CdTe sample were observed through four kinds of experiments to analyze its performance. The resistivity was obtained as 1.41 x 10{sup 10} Ωcm by using a Keithley 6517A high-precision electrometer. The mobility-life time products for electrons and holes were 3.137 x 10{sup -}'4 cm{sup 2}/V and 4.868 x 10{sup -5} cm{sup 2}/V, respectively. Finally, we achieved a 16.8% energy resolution at 59.5 keV for the {sup 241}Am gamma-ray source. The CdTe semiconductor detector grown at KAERI has a performance good enough to detect low-energy gamma-rays.

  7. Long Carrier Lifetimes in Large-Grain Polycrystalline CdTe Without CdCl2

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, Soren A.; Burst, James M.; Duenow, Joel N.; Guthrey, Harvey L.; Moseley, John; Moutinho, Helio R.; Johnston, Steve W.; Kanevce, Ana; Al-Jassim, Mowafak M.; Metzger, Wyatt K.

    2016-06-27

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  8. A simple and sensitive label-free fluorescence sensing of heparin based on Cdte quantum dots.

    Science.gov (United States)

    Rezaei, B; Shahshahanipour, M; Ensafi, Ali A

    2016-06-01

    A rapid, simple and sensitive label-free fluorescence method was developed for the determination of trace amounts of an important drug, heparin. This new method was based on water-soluble glutathione-capped CdTe quantum dots (CdTe QDs) as the luminescent probe. CdTe QDs were prepared according to the published protocol and the sizes of these nanoparticles were verified through transmission electron microscopy (TEM), X-ray diffraction (XRD) and dynamic light scattering (DLS) with an average particle size of about 7 nm. The fluorescence intensity of glutathione-capped CdTe QDs increased with increasing heparin concentration. These changes were followed as the analytical signal. Effective variables such as pH, QD concentration and incubation time were optimized. At the optimum conditions, with this optical method, heparin could be measured within the range 10.0-200.0 ng mL(-1) with a low limit of detection, 2.0 ng mL(-1) . The constructed fluorescence sensor was also applied successfully for the determination of heparin in human serum. Copyright © 2015 John Wiley & Sons, Ltd.

  9. Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

    Energy Technology Data Exchange (ETDEWEB)

    Hu Fengqin [Key Laboratory of Colloid, Interface Science and Chemical Thermodynamics, Molecular Science Center, Institute of Chemistry, Chinese Academy of Sciences, Zhong Guan Cun, Bei Yi Jie 2, Beijing 100080 (China); Ran Yuliang [Department of Cell and Molecular Biology, Cancer Institute, Chinese Academy of Medical Sciences and Peking Union Medical College, Pan Jia Yuan, Chao Yang Qu, Beijing 100021 (China); Zhou Zhuan [Department of Cell and Molecular Biology, Cancer Institute, Chinese Academy of Medical Sciences and Peking Union Medical College, Pan Jia Yuan, Chao Yang Qu, Beijing 100021 (China); Gao Mingyuan [Key Laboratory of Colloid, Interface Science and Chemical Thermodynamics, Molecular Science Center, Institute of Chemistry, Chinese Academy of Sciences, Zhong Guan Cun, Bei Yi Jie 2, Beijing 100080 (China)

    2006-06-28

    Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection.

  10. D. C. electrical properties of vacuum-deposited CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, S.; Barua, K.

    1982-06-18

    The current-voltage characteristics of vacuum-deposited CdTe films were studied as a function of film thickness (2500-13 000 A) at various temperatures (0-110/sup 0/C). The d.c. conduction mechanism was explained using a modified Poole-Frenkel equation.

  11. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  12. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    He, Kai; Wang, Xi; Zhang, Peng; Chen, Yi-Yu [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, Song-Min; Xie, Xiao-Hui; Lin, Chun, E-mail: chun-lin@mail.sitp.ac.cn; Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao, E-mail: qinyao@mail.sitp.ac.cn [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Li, Yang [Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-05-28

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V{sub FB}=−5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R{sub 0}A product and corresponding dark current calculated from the proposed model as functions of the gate voltage V{sub g} demonstrate good consistency with the measured values. The R{sub 0}A product remarkably degenerates when V{sub g} is far below or above V{sub FB} because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7×10{sup 7} Ω · cm{sup 2} around the transition between surface depletion and weak inversion when V{sub g}≈−4 V, which might result from reduced generation-recombination current.

  13. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  14. Phonon Raman spectra of colloidal CdTe nanocrystals: effect of size, non-stoichiometry and ligand exchange

    National Research Council Canada - National Science Library

    Dzhagan, Volodymyr; Lokteva, Irina; Himcinschi, Cameliu; Jin, Xiaoping; Kolny-Olesiak, Joanna; Zahn, Dietrich RT

    2011-01-01

    ...) surface onto the phonon spectra of colloidal CdTe NC of different size and composition. The oleic acid ligand exchange for pyridine ones was found to change noticeably the position and width of the longitudinal optical (LO...

  15. Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale

    Science.gov (United States)

    Bai, Zhizhong; Yang, Jun; Wang, Deliang

    2011-10-01

    CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9% was obtained for a 1-μm-thick CdTe solar cell. An increased intensity of deep recombination states in the band gap, which was responsible for the reduced open-circuit voltage and fill factor for ultra-thin solar cells, was induced due to the not-well-developed polycrystalline CdTe microstructure and the CdS/CdTe heterojunction and the presence of Cu in the back contact. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency.

  16. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  17. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  18. Highly luminescent mono- and multilayers of immobilized CdTe nanocrystals: controlling optical properties through post chemical surface modification.

    Science.gov (United States)

    Tsuruoka, Takaaki; Takahashi, Rena; Nakamura, Toshihiro; Fujii, Minoru; Akamatsu, Kensuke; Nawafune, Hidemi

    2008-04-14

    The significant fluorescence enhancement of immobilized CdTe nanocrystals through chemical surface modifications is described, enabling us to fabricate stable, highly luminescent thin films and patterns of nanocrystal mono- and mutilayers.

  19. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Science.gov (United States)

    Araghi, Houshang; Zabihi, Zabiholah; Nayebi, Payman; Ehsani, Mohammad Mahdi

    2016-10-01

    II-VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  20. Influence of Kilo-Electron Oxygen Ion Irradiation on Structural, Electrical and Optical Properties of CdTe Thin Films

    Science.gov (United States)

    Honey, Shehla; Thema, F. T.; Bhatti, M. T.; Ishaq, A.; Naseem, Shahzad; Maaza, M.

    2016-09-01

    In this paper, effect of oxygen (O+) ion irradiation on the properties of polycrystalline cubic structure CdTe thin films has been investigated. CdTe thin films were irradiated with O+ ions of energy 80keV at different fluence ranging from 1×1015 to 5×1016 ion/cm2 at room temperature. At 1×1015 ion/cm2 O+ ions fluence, the CdTe structure was maintained while XRD peaks of cubic phase were shifted toward lower angles. At 5×1016 ion/cm2 O+ ions fluence, cubic structure of CdTe thin films was transformed into hexagonal structure. In addition, electrical resistivity and optical bandgap were decreased with increasing O+ ion beam irradiation.

  1. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  2. Hydrothermal synthesis of CdTe QDs: Their luminescence quenching in the presence of bio-molecules and observation of bistable memory effect in CdTe QD/PEDOT:PSS heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Khatei, Jayakrishna [Department of Physics, Indian Institute of Science, Bangalore 560012 (India); Koteswara Rao, K.S.R., E-mail: ksrkrao@physics.iisc.ernet.in [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

    2011-10-17

    Highlights: {center_dot} CdTe QD has been prepared by modified hydrothermal method in room ambient. {center_dot} Luminescence quenching of CdTe QDs in the presence of bio-molecules demonstrated. {center_dot} The CdTe QDs shows memory effect (electrical bistability). - Abstract: We report one-pot hydrothermal synthesis of nearly mono-disperse 3-mercaptopropionic acid capped water-soluble cadmium telluride (CdTe) quantum dots (QDs) using an air stable Te source. The optical and electrical characteristics were also studied here. It was shown that the hydrothermal synthesis could be tuned to synthesize nano structures of uniform size close to nanometers. The emissions of the CdTe QDs thus synthesized were in the range of 500-700 nm by varying the duration of synthesis. The full width at half maximum (FWHM) of the emission peaks is relatively narrow (40-90 nm), which indicates a nearly uniform distribution of QD size. The structural and optical properties of the QDs were characterized by transmission electron microscopy (TEM), photoluminescence (PL) and Ultraviolet-visible (UV-Vis) spectroscopy. The photoluminescence quenching of CdTe QDs in the presence of L-cysteine and DNA confirms its biocompatibility and its utility for biosensing applications. The room temperature current-voltage characteristics of QD film on ITO coated glass substrate show an electrically induced switching between states with high and low conductivities. The phenomenon is explained on the basis of charge confinement in quantum dots.

  3. Simultane Untersuchung der Diffusion von intrinsischen und extrinsischen Defekten in CdTe mittels ortsaufgelöster Photolumineszenzspektroskopie

    OpenAIRE

    2013-01-01

    Die vorliegende Arbeit beschäftigt sich mit der Untersuchung von Diffusionsphänomenen in CdTe. Radiotracerexperimente, bei denen mit Gruppe-I-Elementen dotiertes CdTe unter Cd-Dampfdruck getempert wurde, ergaben Konzentrationsprofile, welche die Diffusion der Fremdatome gegen ihren Konzentrationsgradienten voraussetzen (Uphill-Diffusion). In früheren Arbeiten wurde ein Modell entwickelt, das diese Konzentrationsprofile quantitativ mit der Diffusion der intrinsischen Defekte des Cd-Untergitter...

  4. Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2007-04-01

    The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

  5. Interface Characterization of Single-Crystal CdTe Solar Cells With VOC > 950 mV

    Energy Technology Data Exchange (ETDEWEB)

    Burst, James M.; Duenow, Joel N.; Kanevce, Ana; Moutinho, Helio R.; Jiang, Chun Sheng; Al-Jassim, Mowafak M.; Reese, Matthew Owen; Albin, David S.; Aguiar, Jeffrey A.; Colegrove, Eric; Ablekim, Tursun; Swain, Santosh K.; Lynn, Kelvin G.; Kuciauskas, Darius; Barnes, Teresa M.; Metzger, Wyatt K.

    2016-11-01

    Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

  6. Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States); Varga, Tamas [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

    2013-11-15

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 Å while ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an √2 × √2 R45° configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.0–2.2 eV) matched well with the predicted value.

  7. Band offsets for mismatched interfaces. The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kaspar, Tiffany C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Droubay, Timothy C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Varga, Tamas [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-08-02

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° √2 x √2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

  8. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  9. Kardar-Parisi-Zhang universality, anomalous scaling and crossover efects in the growth of CdTe thin films

    OpenAIRE

    Almeida, Renan Augusto Lisbôa

    2015-01-01

    A relation between the mound evolution and large-wavelength fluctuations at CdTe surface has been established. One finds that short-length scales are dictated by an interplay between the effects of the for- mation of defects at colided boundaries of neighboring grains and a relaxation process which stems from the diffusion and deposition of particles (CdTe molecules) torward these regions. A Kinetic Monte Carlo model corroborates these reasonings. As T is increased, that competition gives ris...

  10. 3D Lifetime Tomography Reveals How CdCl 2 Improves Recombination Throughout CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, Edward S. [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA; PLANT PV, Inc, Alameda CA 94501 USA; Ursprung, Benedikt [PLANT PV, Inc, Alameda CA 94501 USA; Colegrove, Eric [National Renewable Energy Laboratory, Golden CO 80401 USA; Moutinho, Helio R. [National Renewable Energy Laboratory, Golden CO 80401 USA; Borys, Nicholas J. [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA; Hardin, Brian E. [PLANT PV, Inc, Alameda CA 94501 USA; Peters, Craig H. [PLANT PV, Inc, Alameda CA 94501 USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, Golden CO 80401 USA; Schuck, P. James [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA

    2016-11-15

    Using two-photon tomography, carrier lifetimes are mapped in polycrystalline CdTe photovoltaic devices. These 3D maps probe subsurface carrier dynamics that are inaccessible with traditional optical techniques. They reveal that CdCl2 treatment of CdTe solar cells suppresses nonradiative recombination and enhances carrier lifetimes throughout the film with substantial improvements particularly near subsurface grain boundaries and the critical buried p-n junction.

  11. Evaluation of toxic effects of CdTe quantum dots on the reproductive system in adult male mice.

    Science.gov (United States)

    Li, Xiaohui; Yang, Xiangrong; Yuwen, Lihui; Yang, Wenjing; Weng, Lixing; Teng, Zhaogang; Wang, Lianhui

    2016-07-01

    Fluorescent quantum dots (QDs) are highly promising nanomaterials for various biological and biomedical applications because of their unique optical properties, such as robust photostability, strong photoluminescence, and size-tunable fluorescence. Several studies have reported the in vivo toxicity of QDs, but their effects on the male reproduction system have not been examined. In this study, we investigated the reproductive toxicity of cadmium telluride (CdTe) QDs at a high dose of 2.0 nmol per mouse and a low dose of 0.2 nmol per mouse. Body weight measurements demonstrated there was no overt toxicity for both dose at day 90 after exposure, but the high dose CdTe affected body weight up to 15 days after exposure. CdTe QDs accumulated in the testes and damaged the tissue structure for both doses on day 90. Meanwhile, either of two CdTe QDs treatments did not significantly affect the quantity of sperm, but the high dose CdTe significantly decreased the quality of sperm on day 60. The serum levels of three major sex hormones were also perturbed by CdTe QDs treatment. However, the pregnancy rate and delivery success of female mice that mated with the treated male mice did not differ from those mated with untreated male mice. These results suggest that CdTe QDs can cause testes toxicity in a dose-dependent manner. The low dose of CdTe QDs is relatively safe for the reproductive system of male mice. Our preliminary result enables better understanding of the reproductive toxicity induced by cadmium-containing QDs and provides insight into the safe use of these nanoparticles in biological and environmental systems.

  12. Semiconductor nanowires self-assembled from colloidal CdTe nanocrystal building blocks: optical properties and application perspectives

    OpenAIRE

    RAKOVICH, YURY; DONEGAN, JOHN FRANCIS

    2012-01-01

    PUBLISHED Solution-based self-assembly of quasi-one-dimensional semiconductor nanostructures (nanowires) from quasi-zero-dimensional (quantum dots) colloidal nanocrystal building blocks has proven itself as a powerful and flexible preparation technique. Polycrystalline CdTe nanowires self-assembled from light-emitting thiol-capped CdTe nanocrystals are the focus of this Feature Article. These nanowires represent an interesting model system for quantum dot solids, where electronic coupling ...

  13. Semiconductor nanowires self-assembled from colloidal CdTe nanocrystal building blocks: optical properties and application perspectives

    OpenAIRE

    Rakovich, Yury P.; Jäckel, Frank; Donegan, John F.; Rogach, Andrey L

    2012-01-01

    Solution-based self-assembly of quasi-one-dimensional semiconductor nanostructures (nanowires) from quasi-zero-dimensional (quantum dots) colloidal nanocrystal building blocks has proven itself as a powerful and flexible preparation technique. Polycrystalline CdTe nanowires self-assembled from light-emitting thiol-capped CdTe nanocrystals are the focus of this Feature Article. These nanowires represent an interesting model system for quantum dot solids, where electronic coupling between the i...

  14. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vishnyakov, A. V.; Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru; Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A. [Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division, 13, Acad. Lavrent' ev Avenue, Novosibirsk 630090 (Russian Federation)

    2014-03-03

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  15. Solution-Processed, Ultrathin Solar Cells from CdCl3(-)-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3(-) Ligands.

    Science.gov (United States)

    Zhang, Hao; Kurley, J Matthew; Russell, Jake C; Jang, Jaeyoung; Talapin, Dmitri V

    2016-06-22

    Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer.

  16. The study of properties of CdTe thin films deposited in Ar/O{{2}} atmosphere

    Science.gov (United States)

    Li, Y.; Li, B.; Feng, L.; Zheng, J.; Li, W.

    2009-02-01

    The preparation and properties of CdTe thin films is of a primary interest for the CdTe thin film solar cells in both research and technology. In our work, polycrystalline CdTe thin films were deposited on pretreated glass substrates in Ar/O{2} atmosphere by closed-space sublimation (CSS) technology. Structural property was studied by X-ray diffraction (XRD), surface morphology was observed by scanning electron microscopy (SEM). The optical and electrical properties of CdTe films were investigated, as well as the effects of deposition temperatures, the ratio of gas (Ar/O{2}) and post-treatment on the properties. The high quality CdTe layer was prepared based on the above studies. These layers were used to prepared CdS/CdTe/ZnTe:Cu solar cells. Efficiency of 13.38% and fill factor of 70.3% (0.501 cm2 area) for CdTe solar cells have been achieved. Project supported by the National High Technology Research and Development Program of China (Grant No.2003AA513010) and the National Natural Science Foundation of China (Grant No.60506004).

  17. Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

    Directory of Open Access Journals (Sweden)

    Juan P Monrás

    Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

  18. Quantum dot sensitized solar cells. A tale of two semiconductor nanocrystals: CdSe and CdTe.

    Science.gov (United States)

    Bang, Jin Ho; Kamat, Prashant V

    2009-06-23

    CdSe and CdTe nanocrystals are linked to nanostructured TiO2 films using 3-mercaptopropionic acid as a linker molecule for establishing the mechanistic aspects of interfacial charge transfer processes. Both these quantum dots are energetically capable of sensitizing TiO2 films and generating photocurrents in quantum dot solar cells. These two semiconductor nanocrystals exhibit markedly different external quantum efficiencies ( approximately 70% for CdSe and approximately 0.1% for CdTe at 555 nm). Although CdTe with a more favorable conduction band energy (E(CB) = -1.0 V vs NHE) is capable of injecting electrons into TiO2 faster than CdSe (E(CB) = -0.6 V vs NHE), hole scavenging by a sulfide redox couple remains a major bottleneck. The sulfide ions dissolved in aqueous solutions are capable of scavenging photogenerated holes in photoirradiated CdSe system but not in CdTe. The anodic corrosion and exchange of Te with S dominate the charge transfer at the CdTe interface. Factors that dictate the efficiency and photostability of CdSe and CdTe quantum dots are discussed.

  19. High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices

    CERN Document Server

    Watanabe, Shin; Aono, Hiroyuki; Takeda, Shin'ichiro; Odaka, Hirokazu; Kokubun, Motohide; Takahashi, Tadayuki; Nakazawa, Kazuhiro; Tajima, Hiroyasu; Onishi, Mitsunobu; Kuroda, Yoshikatsu

    2008-01-01

    We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was ob...

  20. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    Directory of Open Access Journals (Sweden)

    Songbai Hu

    2011-12-01

    Full Text Available Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries diffuse deeply in the CdTe layer, and more photogenerated electrons and holes are separated by the segregated SbCd+ donors into the GBs. What is more, the doping concentration in the vicinity of the CdTe/CdS heterojunction increases for the formation of substitutional SbTe- acceptors under the Cd-rich conditions. For the introduction of the p-type Sb2Te3 layers as the back contact to the CdTe thin film solar cells, the performance of CdTe thin film solar cells has been greatly improved and an efficiency of 13.1% (FF=62.3%, Jsc=25.8 mA/cm2, Voc= 815.8 mV obtained.

  1. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  2. First Principle Calculation for the Electronic Bands and Absorption of CdTe1-xSbx

    Institute of Scientific and Technical Information of China (English)

    WANG Long; HUANG Zheng; MA Huan-feng; QIANG Wei-rong; PAN Min

    2010-01-01

    The lattice parameters for the derivatives of cadmium telluride, CdTe1-xSbx, with the zinc blend crystal structure are calculated using the generalized gradient approximation method; which is based on the density functional theory (DFT). The effects of antimony (Sb) on the lattices, electric bands, electronic state density, absorption spectroscopy, and band gap between the valence band maximum (VBM) and the conduction band minimum (CBM) of CdTe1-xSbx are discussed. The results show that the antimonic atoms in the lattice are advantageous in promoting the hole concentration and conductivities of CdTe1-xSbx. The increase of the Sb content in CdTe1-xSbx reduces the interaction among Cd, Te, and Sb; resulting in a decreased binding energy within CdTe1-xSbx as well as an increase in the electronic gap. Also discussed are the mechanics for the lattice phase change of CdTe1-xSbx at x=0.5.

  3. Effect of Cadion 1B on the Spectrum of Mercaptoacetic Acid-stabilized CdTe Quantum Dots

    Institute of Scientific and Technical Information of China (English)

    WEN Li-Qun; ZHOU Xing-Wang; L(U) Jian-Quan

    2008-01-01

    The effect of cadion 1B (4-nitro-benzene-diazo-amino-azobenzene) on the fluorescent and absorption spectros- copy of mercaptoacetic acid-stabilized CdTe quantum dots (CdTe QD) in aqueous media was studied. Surfactant, medium, dosages of the cadion 1B, pH and thermodynamics parameters were also examined. The experimental re-sults showed that when cadion 1B was added into the CdTe QD solution, a new absorption peak was observed, and the fluorescence of CdTe QD was quenched to some extent, suggesting that there exist an interaction between cadion 1B and CdTe QD. The apparent equilibrium constant at room temperature was calculated to be 1.095×106 L·mol-1, and the coverage ratio of cadion IB on the surface of CdTe QD was estimated as 45%. Thermodynamic calculations revealed that the interaction was a spontaneous process in which electrostatic interactions play a major role.

  4. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    Directory of Open Access Journals (Sweden)

    Shi Lixin

    2011-01-01

    Full Text Available Abstract Cadmium telluride quantum dots (Cdte QDs have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  5. ROIC with on-chip sigma-delta AD converter for HgCdTe e-APD FPA

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2013-10-01

    HgCdTe electron injection avalanche photodiodes (e-APDs) work at linear mode. A weak optical current signal is amplified orders of magnitude due to the internal avalanche mechanism and it has been demonstrated to be one of the most promising methods to focal-plane arrays (FPAs) for low-flux like hyper-spectral imaging and high-speed applications such as active imaging. This paper presents the design of a column-shared ADC for cooled e-APDs FPA. Designing a digital FPA requires fulfilling very stringent requirements in terms of power consumption, silicon area and speed. Among the various ADC architectures sigma-delta conversion is a promising solution for high-performance and medium size FPA such as 128×128. The performance of Sigma-delta ADC rather relies on the modulator structure which set over-sampling and noise shaping characteristics than on critical analog circuits. This makes them quite robust and flexible. A multistage noise shaping (MASH) 2-1 single bit architecture sigma-delta conversion with switched-capacitor circuits is designed for column-shared ADC, which is implanted in the GLOBALFOUNDRIES 0.35um CMOS process with 4-poly and 4-metal on the basis of a 100um pixel pitch. It operates under 3.3V supply and the output range of the quantizer is 2V. A quantization noise subtraction circuit in modulator is designed to subtract the quantization noise of first-stage modulator. The quantization noise of the modulator is shaped by a high-pass filter. The silicon area and power consumption are mainly determined by the decimation low pass filter. A cascaded integrator-comb (CIC) filter is designed as the digital decimator filter. CIC filter requires no multipliers and use limited storage thereby leading to more economical hardware implementation. The register word length of the filter in each stage is carefully dimensioned in order to minimize the required hardware. Furthermore, the digital filters operate with a reduced supply voltage to 1.5V. Simulation

  6. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  7. Energy and coincidence time resolution measurements of CdTe detectors for PET

    Science.gov (United States)

    Ariño, G.; Chmeissani, M.; De Lorenzo, G.; Puigdengoles, C.; Cabruja, E.; Calderón, Y.; Kolstein, M.; Macias-Montero, J. G.; Martinez, R.; Mikhaylova, E.; Uzun, D.

    2013-02-01

    We report on the characterization of 2 mm thick CdTe diode detector with Schottky contacts to be employed in a novel conceptual design of PET scanner. Results at -8°C with an applied bias voltage of -1000 V/mm show a 1.2% FWHM energy resolution at 511 keV. Coincidence time resolution has been measured by triggering on the preamplifier output signal to improve the timing resolution of the detector. Results at the same bias and temperature conditions show a FWHM of 6 ns with a minimum acceptance energy of 500 keV. These results show that pixelated CdTe Schottky diode is an excellent candidate for the development of next generation nuclear medical imaging devices such as PET, Compton gamma cameras, and especially PET-MRI hybrid systems when used in a magnetic field immune configuration.

  8. Structural phase transition of CdTe: an ab initio study.

    Science.gov (United States)

    Alptekin, Sebahaddin

    2013-01-01

    A constant pressure ab initio MD technique and density functional theory with a generalized gradient approximation (GGA) was used to study the pressure-induced phase transition in zinc-blende CdTe. We found that CdTe undergoes a structural first-order phase transition to [Formula: see text] (binary β-tin) tetragonal structure in the constant pressure molecular dynamics simulation at 20 GPa. When the pressure was increased to 50 GPa, the phase of tetragonal structure converted to a new Imm2 orthorhombic structure. These phase transformations were also calculated by using the enthalpy calculations. Transition phases, lattice parameters and bulk properties we attained are comparable with experimental and theoretical data.

  9. CdTe detector efficiency calibration using thick targets of pure and stable compounds

    Science.gov (United States)

    Chaves, P. C.; Taborda, A.; Reis, M. A.

    2012-02-01

    Quantitative PIXE measurements require perfectly calibrated set-ups. Cooled CdTe detectors have good efficiency for energies above those covered by Si(Li) detectors and turn on the possibility of studying K X-rays lines instead of L X-rays lines for medium and eventually heavy elements, which is an important advantage in various cases, if only limited resolution systems are available in the low energy range. In this work we present and discuss spectra from a CdTe semiconductor detector covering the energy region from Cu (K α1 = 8.047 keV) to U (K α1 = 98.439 keV). Pure thick samples were irradiated with proton beams at the ITN 3.0 MV Tandetron accelerator in the High Resolution High Energy PIXE set-up. Results and the application to the study of a Portuguese Ossa Morena region Dark Stone sample are presented in this work.

  10. Micro through nanostructure investigations of polycrystalline CdTe: Correlations with processing and electronic structures

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Moutinho, H.R.; Hasoon, F.A.; Keyes, B.M.; Ahrenkiel, R.K.; Al-Jassim, M.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States); Birkmire, R.W. [Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion

    1994-12-31

    This paper provides first-time correlations of the nanoscale physical structure with the macroscale electronic and optical properties of CdTe/CdS thin films for several standard deposition techniques. Atomic force microscopy (AFM) was used to determine the micro and nanostructures of polycrystalline CdTe thin films used in photovoltaic (PV) cell fabrication. Photoluminescence (PL) was used to determine band gap, relative defect density, and photoexcited carrier lifetime. Nanostructural features (nanograins), beyond the spatial resolution of conventional scanning electron microscopy (SEM), were observed and characterized in as-deposited CdTe. The correlations of the proximal probe measurements of the physical structure with the optically determined electronic properties were used to show the effects of the chemical and heat processing, directly and conclusively. A particularly striking effect with important implications for PV applications is the diffusion of sulfur across the CdTe/CdS interface during heat treatment.

  11. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States); Mayo, B. [Southern University and AM College, Harding Boulevard, Baton Rouge, Louisiana 70813 (United States)

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350&hthinsp;{degree}C and completely recrystallized after the same treatment at 400&hthinsp;{degree}C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures. {copyright} {ital 1999 American Institute of Physics.}

  12. Analyses of photoluminescence spectra of CdTe thin films at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad-Bitar, R. [University of Jordan, Amman (Jordan); Moutinho, H.; Abulfotuh, F.; Kazmerski, L. [Solar Energy Research Inst., Golden, CO (United States)

    1995-11-01

    Photoluminescence (PL) spectra of thin films of CdTe grown on glass by evaporation have been obtained at different laser powers and at different temperatures near and to the red end of the band gap. We suggest an analytical method which deconvolutes the PL spectrum into peaks corresponding to the main electronic transitions. Each spectrum was analytically fitted to eight Gaussian peaks. Gaussian peaks have been found to give the best fit to the spectrum. The quality of the fit can be checked by the fact that the positions and the widths of the eight peaks of each PL spectrum should agree with the fit to another spectrum taken at a different excitation power or a different sample temperature. These results may help to identify these peaks and suggest a model for the shallow electrically active states between the conduction and valance bands of CdTe thin films. (Author)

  13. CdTe quantum dot as a fluorescence probe for vitamin B12 in dosage form

    Science.gov (United States)

    Vaishnavi, E.; Renganathan, R.

    2013-11-01

    We here report the CdTe quantum dot (CdTe QDs)-based sensor for probing vitamin B12 derivatives in aqueous solution. In this paper, simple and sensitive fluorescence quenching measurements has been employed. The Stern-Volmer constant (KSV), quenching rate constant (kq) and binding constant (K) were rationalized from fluorescence quenching measurement. Furthermore, the fluorescence resonance energy transfer (FRET) mechanism was discussed. This method was applicable over the concentration ranging from 1 to 14 μg/mL (VB12) with correlation coefficient of 0.993. The limit of detection (LOD) of VB12 was found to be 0.15 μg/mL. Moreover, the present approach opens a simple pathway for developing cost-effective, sensitive and selective QD-based fluorescence sensors/probes for biologically significant VB12 in pharmaceutical sample with mean recoveries in the range of 100-102.1%.

  14. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Pradip Kumar Kalita

    2003-06-01

    The temperature dependence of dc photoconductivity in the measuring range 303–417 K has been studied in CdTe thin films having thickness < 4000 Å. The photoactivation energy decreases in dark which is explained on the basis of grain boundary (GB) effect. The current lost to recombination at GB space charge region causes a negative effect on the photosensitivity of the films. A decrease in photosensitivity with increase in temperature is attributed to the reduction of photoexcitation process. It is observed that the minority carrier lifetime varies inversely with light intensity which supports the sublinear relationship of photoconductivity with the intensity of light and thereby confirms the defect-controlled photoconductivity in CdTe thin films.

  15. Thermoelectric power and Hall effect measurements in polycrystalline CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Paez, B.A. [Pontificia Univ. Javeriana, Santafe de Bogota (Colombia). Thin Films Group

    2000-07-01

    Polycrystalline CdTe thin films deposited by close space sublimation (CSS), were characterized through thermoelectric power, {alpha}, Hall coefficient, and resistivity, {rho}, measurements in the range of 90 to 400 K. This was in order to determine the scattering mechanisms which mainly affect the electrical transport properties in CdTe thin films. The results were analyzed based on theoretical calculations of {alpha} against temperature. This model includes scattering processes within the grains and at the grain boundaries. Some of the parameters used in this calculation were determined experimentally: grain size, crystal structure, activation energy and effective mass. It is important to state that the main approximations were justified according to experimental measurements. (orig.)

  16. Improvement of the sensitivity of CdTe detectors in the high energy regions

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

    1996-07-01

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  17. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    OpenAIRE

    Matin, M.A.; Tomal, M. U.; A. M. Robin; N. Amin

    2013-01-01

    This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF) using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures). A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF ...

  18. Redetermination of Ba2CdTe3 from single-crystal X-ray data

    Directory of Open Access Journals (Sweden)

    Min Yang

    2012-10-01

    Full Text Available The previous structure determination of the title compound, dibarium tritelluridocadmate, was based on powder X-ray diffraction data [Wang & DiSalvo (1999. J. Solid State Chem. 148, 464–467]. In the current redetermination from single-crystal X-ray data, all atoms were refined with anisotropic displacement parameters. The previous structure report is generally confirmed, but with some differences in bond lengths. Ba2CdTe3 is isotypic with Ba2MX3 (M = Mn, Cd; X = S, Se and features 1∞[CdTe2/2Te2/1]4− chains of corner-sharing CdTe4 tetrahedra running parallel [010]. The two Ba2+ cations are located between the chains, both within distorted monocapped trigonal–prismatic coordination polyhedra. All atoms in the structure are located on a mirror plane.

  19. Studies on the grain boundary effect in polycrystalline CdTe films using optical reflectance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, J. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India)); Pal, R. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India)); Bhattacharyya, S.K. (Central Glass and Ceramic Research Inst., Calcutta (India)); Chaudhuri, S. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India)); Pal, A.K. (Dept. of Materials Science, Indian Association for the Cultivation of Science, Calcutta (India))

    1993-11-15

    The grain boundary effect in polycrystalline CdTe films deposited at various substrate temperatures has been studied critically. The grain boundary potential, the density of trap states at the boundary region and the carrier concentration in the films were obtained by an alternative technique that utilizes the reflectance measurements of the highly resistive films deposited on a nonabsorbing substrate. The barrier height in the CdTe films decreased from 0.34 to 0.2 eV as the grain size increased from 60 to 133 nm, owing to the increase in the deposition temperature from 373 to 523 K. Correspondingly, the density of trap states in the grain boundary region decreased from 1.63x10[sup 13] to 6.15x10[sup 12] cm[sup -2]. (orig.)

  20. A TEM investigation of the lattice defects and exfoliation in hydrogen-implanted CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Berndt, P.R. [Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6001 (South Africa)]. E-mail: pearl.berndt@upe.ac.za; Neethling, J.H. [Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6001 (South Africa); Franklyn, C.B. [Radiation Utilisation Group, Nuclear Technology Department, NECSA, Pretoria (South Africa); Zandbergen, H.W. [National Centre for HREM, Delft University of Technology, Delft (Netherlands)

    2004-11-15

    This study focuses on characterizing the defects associated with 400 keV hydrogen-implantation of CdTe, at a dose of 1 x 10{sup 16} H{sup +} cm{sup -2} to 5 x 10{sup 16} H{sup +} cm{sup -2}, with subsequent annealing. Transmission electron microscopy (TEM) and a hybrid diffraction technique, large-angle convergent-beam electron diffraction (LACBED), were used in the characterization process. Extended defects resulting from the hydrogen-implantation and annealing process include dislocations, microcracks and bubbles. Microcrack and bubble formation occurs on the cleavage planes of CdTe. Exfoliation is achieved at the higher implantation dose. High-resolution electron microscopy was used in the microstructural analysis of the microcracks. LACBED of the implanted material containing bubbles revealed a highly strained lattice with evidence of lattice distortion in-plane and in the direction of implantation.

  1. Identification of critical stacking faults in thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  2. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  3. [Spectral analysis of the effect of annealing on CdTe polycrystalline film].

    Science.gov (United States)

    Wang, Wen-Wu; Zheng, Jia-Gui; Feng, Liang-Huan; Cai, Ya-Ping; Lei, Zhi; Zhang, Jing-Quan; Li, Bing; Li, Wei; Wu, Li-Li

    2010-03-01

    Polycrystalline CdTe thin films were prepared by close-spaced sublimation (CCS) and were annealed in different condition. The thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy(XPS). The content distribution and valence state of all elements after annealing were studied. All results show that the as-deposited CdTe thin films are in a cubic phase and have the preferred orientation in (111) direction. After annealing, the peak intensity of (111), (220), (311) grows and the crystal grains grow up, while the crystal boundary decreases. So the compound probabilities of current carrier decrease, therefore shunt resistance and drain current are improved. From detailed analysis of X-ray photoelectron data, it is proposed that tellurium oxides present and its content reduces with depth increasing and that there are TeCl2O building blocks.

  4. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  5. Photoinduced interaction between MPA capped CdTe QDs and certain anthraquinone dyes

    Energy Technology Data Exchange (ETDEWEB)

    Jagadeeswari, S.; Asha Jhonsi, M.; Kathiravan, A. [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Renganathan, R., E-mail: rrengas@gmail.co [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2011-04-15

    Photoinduced interaction of mercapto propionic acid (MPA) capped CdTe quantum dots (QDs) with certain anthraquinone dyes namely alizarin, alizarin red S, acid blue 129 and uniblue has been studied by steady state and time resolved fluorescence measurements. Addition of anthraquinone dyes to CdTe QDs results in the reduction of electron hole recombination has been observed (i.e., fluorescence quenching). The Stern-Volmer constant (K{sub SV}), quenching rate constant (k{sub q}) and association constants (K) were obtained from fluorescence quenching data. The interaction of anthraquinone dyes with QDs occurs through static quenching was confirmed by unaltered fluorescence lifetime. The occurrence of electron transfer quenching mechanism has been proved by the negative free energy change ({Delta}G{sub et}) obtained as per the Rehm-Weller equation.

  6. Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Chun-Sheng; To, Bobby; Glynn, Stephen; Mahabaduge, Hasitha; Barnes, Teresa; Al-Jassim, Mowafak M.

    2016-11-21

    We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

  7. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots

    Science.gov (United States)

    Kruse, Carsten; Pacuski, Wojciech; Jakubczyk, Tomasz; Kobak, Jakub; Gaj, Jan A.; Frank, Kristian; Schowalter, Marco; Rosenauer, Andreas; Florian, Matthias; Jahnke, Frank; Hommel, Detlef

    2011-07-01

    Micropillars of different diameters have been prepared by focused ion beam milling out of a planar ZnTe-based cavity. The monolithic epitaxial structure, deposited on a GaAs substrate, contains CdTe quantum dots embedded in a ZnTe λ-cavity delimited by two distributed Bragg reflectors (DBRs). The high refractive index material of the DBR structure is ZnTe, while for the low index material a short-period triple MgTe/ZnTe/MgSe superlattice is used. The CdTe quantum dots are formed by a novel Zn-induced formation process and are investigated by scanning transmission electron microscopy. Micro-photoluminescence measurements show discrete optical modes for the pillars, in good agreement with calculations based on a vectorial transfer matrix method. The measured quality factor reaches a value of 3100.

  8. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kruse, Carsten; Pacuski, Wojciech; Hommel, Detlef [Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, PO Box 330 440, D-28334 Bremen (Germany); Jakubczyk, Tomasz; Kobak, Jakub; Gaj, Jan A [Institute of Experimental Physics, University of Warsaw, Hoza 69, PL-00-681 Warszawa (Poland); Frank, Kristian; Schowalter, Marco; Rosenauer, Andreas [Institute of Solid State Physics, Electron Microscopy, University of Bremen, PO Box 330 440, D-28334 Bremen (Germany); Florian, Matthias; Jahnke, Frank, E-mail: ckruse@ifp.uni-bremen.de [Institute of Theoretical Physics, University of Bremen, PO Box 330 440, D-28334 Bremen (Germany)

    2011-07-15

    Micropillars of different diameters have been prepared by focused ion beam milling out of a planar ZnTe-based cavity. The monolithic epitaxial structure, deposited on a GaAs substrate, contains CdTe quantum dots embedded in a ZnTe {lambda}-cavity delimited by two distributed Bragg reflectors (DBRs). The high refractive index material of the DBR structure is ZnTe, while for the low index material a short-period triple MgTe/ZnTe/MgSe superlattice is used. The CdTe quantum dots are formed by a novel Zn-induced formation process and are investigated by scanning transmission electron microscopy. Micro-photoluminescence measurements show discrete optical modes for the pillars, in good agreement with calculations based on a vectorial transfer matrix method. The measured quality factor reaches a value of 3100.

  9. Identification of Ag-acceptor related photoluminescence in $^{111}\\!$Ag doped CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Ostheimer, V; Schmitz, C; Wolf, H; Wichert, T

    1998-01-01

    Bridgman-grown, nominally undoped CdTe crystals were doped with Ag by implanting radioactive $^{111}\\!$Ag. Photoluminescence spectra of the crystals show a donor-acceptor pair (DAP) line at 1.491 eV. The decrease of the intensity of this line with a half life of T$_{1/2}$=(7.2$\\pm$0.4) d is in good agreement with the half life of the $\\beta\\!^{-}$-decay of $^{111}\\!$Ag to $^{111}\\!$Cd of 7.45 d. This decrease is not caused by the aging behavior of Ag which was reported in the literature. The data show that the involved acceptor defect contains exactly one Ag atom and confirm the earlier assignment of the acceptor to the AgCd defect. Based on the DAP line at 1.491 eV, the spectra did not reveal a contamination of the CdTe crystals by stable Ag.

  10. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  11. Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

    OpenAIRE

    Ariño-Estrada, G.; Chmeissani, M.; De Lorenzo, G.; Kolstein, M.; Puigdengoles, C; García, J; Cabruja, E.

    2014-01-01

    We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain ...

  12. Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, Joel N.; Burst, James M.; Albin, David S.; Reese, Matthew O.; Jensen, Soren A.; Johnston, Steven W.; Kuciauskas, Darius; Swain, Santosh K.; Ablekim, Tursun; Lynn, Kelvin G.; Fahrenbruch, Alan L.; Metzger, Wyatt K.

    2016-11-01

    We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

  13. Cytotoxicity and DNA Damage Effect of TGA-capped CdTe Quantum Dots

    Institute of Scientific and Technical Information of China (English)

    LI Yan-bo; ZHANG Hai-xia; GUO Cai-xia; HU Gui-qin; DU Hai-ying; JIN Ming-hua; HUANG Pei-li; SUN Zhi-wei; YANG Wen-sheng

    2012-01-01

    The cytotoxicity and DNA damage caused by thioglycolic acid(TGA)-capped cadmium telluride(CdTe)quantum dots(QDs)to hepatocyte line HL-7702 were investigated.Cell viability was measured by 3-(4,5-dimethyl-thiazol-2-yl)-2,5-diphenyltetrazolium bromide(MTT)assay; DNA damage was detected by single cell gel electrophoresis(SCGE); the change of cell cycle progression was examined by propidium iodide(PI)-flow cytometry(FCM);apoptosis was measured by acridine orange/ethidium bromide(AO/EB)assay and Annexin V-FITC/PI-FCM(FITC:fluorescein isothiocyanate).The results show that the cytotoxicity induced by CdTe QDs was increased in a dose-dependent and time-dependent manner; after exposure to QDs for 24 h,as the exposure dose increased,the rate of DNA damage was significantly increased(P<0.05),and the degree of DNA damage was elevated.As the dose of CdTe QDs increased,the percentage of G0/G1 phase cells was significantly decreased(P<0.001),while the percenttages of S and G2/M phases cells were significantly increased(P<0.001).In AO/EB assay,apoptotic cells could be observed under a fluorescence microscope,and apoptotic rate was increased as exposure dose increased.In Annexin V-FITC/PI-FCM assay,the apoptotic rates of CdTe QDs treated groups were significantly increased compared with that of control group(P<0.05).Our studies indicate that CdTe QDs could influence cell viability,and induce DNA damage,the S and G2/M phases arrest and apoptosis of HL-7702.

  14. Anomalous scaling and super-roughness in the growth of CdTe polycrystalline films

    OpenAIRE

    Mata, Angélica S.; Ferreira, Jr,Augusto; Ribeiro, Igor R. B.; Ferreira, Sukarno O.

    2011-01-01

    CdTe films grown on glass substrates covered by fluorine doped tin oxide by Hot Wall Epitaxy (HWE) were studied through the interface dynamical scaling theory. Direct measures of the dynamical exponent revealed an intrinsically anomalous scaling characterized by a global roughness exponent $\\alpha$ distinct from the local one (the Hurst exponent $H$), previously reported [Ferreira \\textit{et al}., Appl. Phys. Lett. \\textbf{88}, 244103 (2006)]. A variety of scaling behaviors was obtained with ...

  15. Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films

    OpenAIRE

    Takahashi, Makoto; Uosaki, Kohei; Kita, Hideaki; Yamaguchi, Shoji

    1986-01-01

    The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with t...

  16. Shape-controlled assembly of luminescent dumbbell-like CdTe cystine nanocomposites

    Science.gov (United States)

    Bao, Haifeng; Cui, Xiaoqiang; Li, Chang Ming; Zang, Jianfeng

    2007-11-01

    A shape perfect luminescent dumbbell with size up to several microns was prepared by incorporating CdTe quantum dots (QDs) into locally created L-cystine matrices, and the photoluminescence of the shaped dumbbells can be easily tailored by reaction time. The growth mechanism was thoroughly investigated. This work not only gives a potential application in optical devices, but also gives a deep insight on the assembly mechanism of nanomaterials into micron-size objects.

  17. Edge effects in a small pixel CdTe for X-ray imaging

    Science.gov (United States)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  18. In-depth analysis of chloride treatments for thin-film CdTe solar cells

    OpenAIRE

    Major, J.D.; Al Turkestani, M.; Bowen, L; Brossard, M.; Li, C; Lagoudakis, P.; S. J. Pennycook; Phillips, L. J.; Treharne, R. E.; Durose, K.

    2016-01-01

    CdTe thin-film solar cells are now the main industrially established alternative to silicon-based photovoltaics. These cells remain reliant on the so-called chloride activation step in order to achieve high conversion efficiencies. Here, by comparison of effective and ineffective chloride treatments, we show the main role of the chloride process to be the modification of grain boundaries through chlorine accumulation, which leads an increase in the carrier lifetime. It is also demonstrated th...

  19. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    A. Teyou Ngoupo

    2015-01-01

    Full Text Available Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdTe1-xSx (x=0.12 and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm of CdTe1-xSx layer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.

  20. A TEM and DLTS study of a near. Sigma. 25 CdTe bicrystal

    Energy Technology Data Exchange (ETDEWEB)

    Wang, N.; Haasen, P. (Inst. fuer Metallphysik, Univ. Goettingen (Germany))

    1991-11-16

    Cadmium precipitates are observed at the grain boundary (GB) of a CdTe bicrystal by means of transmission electron microscopy (TEM). In a simple model based on the theory of electron hopping, electrons can be excited by thermal activation and flow from boundary states to precipitates in the boundary. This model gives, in particular, a simple explanation for the emission properties of the precipitates, as determined by deep-level-transient spectroscopy (DLTS) on the bicrystal. (orig.).

  1. Carrier providers or killers: The case of Cu defects in CdTe

    Science.gov (United States)

    Yang, Ji-Hui; Metzger, Wyatt K.; Wei, Su-Huai

    2017-07-01

    Defects play important roles in semiconductors for optoelectronic applications. Common intuition is that defects with shallow levels act as carrier providers and defects with deep levels are carrier killers. Here, taking the Cu defects in CdTe as an example, we show that relatively shallow defects can play both roles. Using first-principles calculation methods combined with thermodynamic simulations, we study the dialectic effects of Cu-related defects on hole density and lifetime in bulk CdTe. Because CuCd can form a relatively shallow acceptor, we find that increased Cu incorporation into CdTe indeed can help achieve high hole density; however, too much Cu can cause significant non-radiative recombination. We discuss strategies to balance the contradictory effects of Cu defects based on the calculated impact of Cd chemical potential, copper defect concentrations, and annealing temperature on lifetime and hole density. These findings advance the understanding of the potential complex defect behaviors of relatively shallow defect states in semiconductors.

  2. Structural and luminescent properties of Fe3+ doped PVA capped CdTe nanoparticles

    Directory of Open Access Journals (Sweden)

    Ravindranadh K.

    2017-07-01

    Full Text Available During recent decades, magnetic and semiconductor nanoparticles have attracted significant attention of scientists in various fields of engineering, physics, chemistry, biology and medicine. Fe3+ doped PVA capped CdTe nanoparticles were prepared by co-precipitation method and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Fe3+ ions in the host lattice and the luminescent properties of prepared sample. Powder XRD data revealed that the crystal structure belongs to a cubic system and its lattice cell parameters were evaluated. The average crystallite size was estimated to be 8 nm. The morphology of prepared samples was analyzed by using SEM and TEM investigations. Functional groups of the prepared sample were observed in FT-IR spectra. Optical absorption and EPR studies have shown that on doping, Fe3+ ions enter the host lattice in octahedral site symmetry. PL studies of Fe3+ doped PVA capped CdTe nanoparticles revealed UV and blue emission bands. CIE chromaticity coordinates were also calculated from the emission spectrum of Fe3+ doped PVA capped CdTe nanoparticles.

  3. Luminescent borate glass for efficiency enhancement of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steudel, Franziska, E-mail: franziska.steudel@iwmh.fraunhofer.de [Fraunhofer Application Center for Inorganic Phosphors, Branch Lab of Fraunhofer Institute for Mechanics of Materials IWM, Lübecker Ring 2, 59494 Soest (Germany); Loos, Sebastian [Department of Electrical Engineering, South Westphalia University of Applied Sciences, Lübecker Ring 2, 59494 Soest (Germany); Ahrens, Bernd; Schweizer, Stefan [Fraunhofer Application Center for Inorganic Phosphors, Branch Lab of Fraunhofer Institute for Mechanics of Materials IWM, Lübecker Ring 2, 59494 Soest (Germany); Department of Electrical Engineering, South Westphalia University of Applied Sciences, Lübecker Ring 2, 59494 Soest (Germany)

    2015-08-15

    Rare-earth (RE) doped borate glasses are investigated for their potential as photon down-shifting cover glass for CdTe solar cells. The barium borate base glass is doped with trivalent rare-earth ions such as Sm{sup 3+}, Eu{sup 3+}, and Tb{sup 3+} showing an intense luminescence in the red (Sm{sup 3+}, Eu{sup 3+}) and green (Tb{sup 3+}) spectral range upon excitation in the ultraviolet and blue. Additionally, the glasses are double-doped with two RE ions for a broad-band absorption. The gain in short-circuit current density of CdTe solar cells with different thicknesses of the CdS buffer layer is calculated. Though the single-doped glasses already reveal a slight increase in short-circuit current density, the double-doped glasses allow for higher efficiency gains since a significant broader spectral range is covered for absorption. For a Tb{sup 3+}/Eu{sup 3+} double-doped glass with a RE doping level of 1 at% each, an efficiency increase of 1.32% can be achieved. - Highlights: • Rare-earth doped front glass for high efficiency CdTe solar cells were prepared. • Double-doping allows for higher efficiency gains than single-doping. • Efficiency enhancement of 1.32% can be achieved with Tb{sup 3+}/Eu{sup 3+} doped front glass.

  4. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  5. An optimized multilayer structure of CdS layer for CdTe solar cells application

    Energy Technology Data Exchange (ETDEWEB)

    Han Junfeng, E-mail: pkuhjf@gmail.com [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao Cheng, E-mail: Cliao@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Jiang Tao [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Zhao Kui [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Klein, A.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany)

    2011-04-28

    Research highlights: > Two different methods to prepare CdS films for CdTe solar cells. > A new multilayer structure of window layer for the CdTe solar cell. > Thinner CdS window layer for the solar cell than the standard CdS layer. > Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer ({approx}80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  6. ``CuInSe2 and CdTe thin films for photovoltaic applications''

    Science.gov (United States)

    Attar, G.; Bhethanobolta, D. P.; Dugan, K.; Karthikeyan, S.; Kazi, M.; Killian, J. L.; Muthaiah, A. B.; Nierman, D.; Oman, D. M.; Swaminathan, R.; Zafar, S. A.; Ferekides, C. S.; Morel, D. L.

    1994-06-01

    We are developing processing techniques for CuInSe2 that are manufacturing-friendly due to relaxed controls on deposition conditions. We routinely achieve Jsc's in the range 35-45+ mA/cm2, FF's of 0.55-0.63, and have recently achieved 410 mV in devices without advanced Ga alloying techniques. Our progress and analysis suggests that these processing techniques can achieve state-of-the-art efficiencies. We are also developing an understanding of the complex underlying device mechanisms and their correlation to processing. We propose that a multi-junction classical model which includes space charge recombination can adequately explain device performance and help guide development efforts. The effect of the substrate temperature on the performance of CdTe solar cells prepared by the close spaced sublimation (CSS) process is being investigated. Significant progress has been made and the maximum open-circuit voltage, short-circuit current, and fill factor obtained are 840-860 mV, 22+ mA/cm2, and 69-70% respectively. The extend of interface reaction between the CdTe and CdS layers appears to be dependent on the substrate temperature. Other process parameters such as the total pressure and spacing are of equal importance in obtaining dense CdTe films. Stability studies are also underway in order to determine whether any degradation mechanisms exist and identify their origins.

  7. Microscopic partition of pressure and elastic constants in CdTe polymorphs

    Energy Technology Data Exchange (ETDEWEB)

    Ouahrani, T. [Laboratoire de Physique Théorique, Tlemcen University, 13000 Tlemcen (Algeria); École Préparatoire en Sciences et Techniques, 13000 Tlemcen (Algeria); Franco, R.; Menéndez, J.M.; Marqués, M. [MALTA Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo (Spain); Recio, J.M., E-mail: jmrecio@uniovi.es [MALTA Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo (Spain)

    2014-04-01

    Highlights: • Pressure ranges of stability of CdTe polymorphs are successfully computed. • A cubic B2 phase is predicted at pressures above 70 GPa. • Microscopic pressures are defined without resorting to energy partitions. • Cd shows a greater mechanical resistance than Te when pressure is applied. • Atomic equations of state are proposed for Cd and Te along the polymorphic sequence. - Abstract: Within the framework of density functional theory, first principles calculations were carried out to determine pressure stability ranges of zinc-blende (B3), cinnabar (Cinn), rock-salt (B1), orthorhombic (Cmcm), and cesium chloride (B2) phases of CdTe. In agreement with experimental observations, we found a B3→Cinn→B1→Cmcm pressure-induced sequence, and predict the B2 phase as a potential high pressure polymorph. The equations of state of all these polymorphs and the components of the elasticity tensor of the B3 phase at zero pressure were determined and microscopically analyzed in terms of atomic contributions. The concept of local pressure allows for quantifying differences in the role played by Cd and Te as regards the compressibility of CdTe phases, and suggests the existence of a general behavior under pressure for binary II–VI semiconductors.

  8. Modeling the defect distribution and degradation of CdTe ultrathin films

    Science.gov (United States)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  9. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Guthrey, Harvey L. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Burst, James M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Duenow, Joel N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Ahrenkiel, Richard K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

    2016-09-09

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  10. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine N. [Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA; National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Kuciauskas, Darius [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Swartz, Craig H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Dippo, Pat [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Edirisooriya, Madhavie [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Ogedengbe, Olanrewaju S. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Sohal, Sandeep [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Hancock, Bobby L. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; LeBlanc, Elizabeth G. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Jayathilaka, Pathiraja A. R. D. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA; Barnes, Teresa M. [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Myers, Thomas H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, USA

    2016-08-29

    Heterostructures with CdTe and CdTe 1-xSex (x ~ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ~ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ~6 um, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 us with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 us.

  11. Thin-film CdTe photovoltaic cells by laser deposition and rf sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R.G.; Bhat, A.; Tabory, C.; Shao, M.; Li, Y.; Savage, M.E.; Tsien, L. (Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606 (United States))

    1992-12-01

    Laser-driven physical vapor deposition (LDPVD) and radio-frequency (rf) sputtering have been used to fabricate thin-film solar cells on SnO[sub 2]-coated glass substrates. The laser-ablation process readily permits the use of several target materials in the same vacuum chamber and complete solar cell structures have been fabricated on SnO[sub 2]-coated glass using LDPVD for the CdS, CdTe, and CdCl[sub 2]. To date the best devices ([similar to]9% AM1.5) have been obtained after a post-deposition anneal at 400 [degree]C. In addition, cells have been fabricated with the combination of LDPVD CdS, rf-sputtered CdTe, and LDPVD CdCl[sub 2]. The performance of these cells indicates considerable promise for the potential of rf sputtering for CdTe photovoltaic devices. The physical mechanisms of LDPVD have been studied by transient optical spectroscopy on the laser ablation plume. These measurements have shown that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a large fraction which is highly excited internally ([ge]6 eV) and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. Quality of as-grown and annealed films has been analyzed by optical absorption. Raman scattering, photoluminescence, electrical conductivity, Hall effect, x-ray diffraction, and SEM/EDS.

  12. Excimer laser doping technique for application in an integrated CdTe imaging device

    CERN Document Server

    Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

  13. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Science.gov (United States)

    Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.; Dippo, Pat; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Barnes, Teresa M.; Myers, Thomas H.

    2016-08-01

    Heterostructures with CdTe and CdTe1-xSex (x ˜ 0.01) absorbers between two wider-band-gap Cd1-xMgxTe barriers (x ˜ 0.25-0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ˜6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  14. Optical absorption enhancement of CdTe nanostructures by low-energy nitrogen ion bombardment

    Science.gov (United States)

    Akbarnejad, E.; Ghoranneviss, M.; Mohajerzadeh, S.; Hantehzadeh, M. R.; Asl Soleimani, E.

    2016-02-01

    In this paper we present the fabrication of cadmium telluride (CdTe) nanostructures by means of RF magnetron sputtering followed by low-energy ion implantation and post-thermal treatment. We have thoroughly studied the structural, optical, and morphological properties of these nanostructures. The effects of nitrogen ion bombardment on the structural parameters of CdTe nanostructures such as crystal size, microstrain, and dislocation density have been examined. From x-ray diffractometer (XRD) analysis it could be deduced that N+ ion fluence and annealing treatment helps to form (3 0 0) orientation in the crystalline structure of cadmium-telluride films. Fluctuations in optical properties like the optical band gap and absorption coefficient as a function of N+ ion fluences have been observed. The annealing of the sample irradiated by a dose of 1018 ions cm-2 has led to great enhancement in the optical absorption over a wide range of wavelengths with a thickness of 250 nm. The enhanced absorption is significantly higher than the observed value in the original CdTe layer with a thickness of 3 μm. Surface properties such as structure, grain size and roughness are noticeably affected by varying the nitrogen fluences. It is speculated that nitrogen bombardment and post-annealing treatment results in a smaller optical band gap, which in turn leads to higher absorption. Nitrogen bombardment is found to be a promising method to increase efficiency of thin film solar cells.

  15. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Science.gov (United States)

    Moseley, John; Al-Jassim, Mowafak M.; Guthrey, Harvey L.; Burst, James M.; Duenow, Joel N.; Ahrenkiel, Richard K.; Metzger, Wyatt K.

    2016-09-01

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  16. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

    Science.gov (United States)

    Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi

    2016-10-01

    A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), {Te}_{{Cd}}^{2 + } - {V}_{{Cd}}^{2 - } (D complex), {In}_{{Cd}}^{ + } - {V}_{{Cd}}^{ - } (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a {V}_{{Cd}}^{2 - } , TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

  17. Electron and hole drift mobility measurements on thin film CdTe solar cells

    Science.gov (United States)

    Long, Qi; Dinca, Steluta A.; Schiff, E. A.; Yu, Ming; Theil, Jeremy

    2014-07-01

    We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10-1-100 cm2/V s, and holes are in the range of 100-101 cm2/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl2; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.

  18. Spatially Resolved Cathodoluminescence of CdTe Thin Films and Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M. J.; Metzger, W.; Gessert, T. A.; Albin, D. S.; Al-Jassim, M. M.

    2003-05-01

    We have investigated the spatial distribution of different transitions identified in the emission spectra of CdTe thin films and solar cells by cathodoluminescence spectroscopic imaging (CLSI). Prior to back-contact deposition, the spectra are dominated by excitons (X) and donor-to-acceptor (DAP) transitions. After contacting, Cu acceptor states are found in addition to the X and DAP recombination processes. A very systematic behavior found in CdTe is that DAP transitions occur preferentially at grain boundaries (GBs). The distribution of these states responsible for the passivation of GBs is not affected by further processing, although additional levels participate in the recombination process. We believe that this stability is one of the reasons for the success of thin-film CdTe solar cells. Estimates of the densities of different donors and acceptors participating in the recombination process are possible from the analysis of the evolution of the emission spectra with the excitation level. It is found that the back contact suppresses some intrinsic acceptors (associated with the A center) near the back-contact interface and, therefore, Cu acceptor states should be responsible for the p-typeness of the back surface more than a reduction of compensation. CLSI measurements are shown to be helpful in understanding the physics of back-contact formation.

  19. Preparation and Properties of CdTe Polycrystalline Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    ZHENG Huajing; ZHANG Jingquan; FENG Lianghuan; ZHENG Jiagui; CAI Wei; LI Bing; CAI Yaping

    2006-01-01

    The structure and characteristics of CdTe thin films are closely dependent on the whole deposition process in close-space sublimation (CSS). The physical mechanism of CSS was analyzed and the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The results indicate: the samples deposited at different pressures have a cubical structure of CdTe and the diffraction peaks of CdS and SnO2∶F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate temperature of 500 ℃ and a source temperature of 620 ℃, the polycrystalline thin films can be made, so the production of high-quality integrated cell with SnO2:F/CdS/CdTe/Au structure is hopeful.

  20. The activation of thin film CdTe solar cells using alternative chlorine containing compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B., E-mail: B.Maniscalco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); Abbas, A.; Bowers, J.W.; Kaminski, P.M.; Bass, K. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); West, G. [Department of Materials, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom)

    2015-05-01

    The re-crystallisation of thin film cadmium telluride (CdTe) using cadmium chloride (CdCl{sub 2}) is a vital process for obtaining high efficiency photovoltaic devices. However, the precise micro-structural mechanisms involved are not well understood. In this study, we have used alternative chlorine-containing compounds to determine if these can also assist the re-crystallisation of the CdTe layer and to understand the separate roles of cadmium and chlorine during the activation. The compounds used were: tellurium tetrachloride (TeCl{sub 4}), cadmium acetate (Cd(CH{sub 3}CO{sub 2}){sub 2}), hydrochloric acid (HCl) and zinc chloride (ZnCl{sub 2}). TeCl{sub 4} was used to assess the role of Cl and the formation of a Te-rich outer layer which may assist the formation of the back contact. (Cd(CH{sub 3}CO{sub 2}){sub 2}) and HCl were used to distinguish between the roles of cadmium and chlorine in the process. Finally, ZnCl{sub 2} was employed as an alternative to CdCl{sub 2}. We report on the efficacy of using these alternative Cl-containing compounds to remove the high density of planar defects present in untreated CdTe. - Highlights: • Cadmium chloride (CdCl{sub 2}) activation treatment • Alternative chlorine containing compounds • Microstructure analysis and electrical performances.

  1. Carrier providers or killers: The case of Cu defects in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Metzger, Wyatt K.; Wei, Su-Huai

    2017-07-24

    Defects play important roles in semiconductors for optoelectronic applications. Common intuition is that defects with shallow levels act as carrier providers and defects with deep levels are carrier killers. Here, taking the Cu defects in CdTe as an example, we show that relatively shallow defects can play both roles. Using first-principles calculation methods combined with thermodynamic simulations, we study the dialectic effects of Cu-related defects on hole density and lifetime in bulk CdTe. Because CuCd can form a relatively shallow acceptor, we find that increased Cu incorporation into CdTe indeed can help achieve high hole density; however, too much Cu can cause significant non-radiative recombination. We discuss strategies to balance the contradictory effects of Cu defects based on the calculated impact of Cd chemical potential, copper defect concentrations, and annealing temperature on lifetime and hole density. These findings advance the understanding of the potential complex defect behaviors of relatively shallow defect states in semiconductors.

  2. Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

    CERN Document Server

    Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

    2011-01-01

    We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

  3. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    Science.gov (United States)

    Pillet, J. C.; Pierre, F.; Jalabert, D.

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed

  4. Fast polycrystalline CdTe detectors for bunch-by-bunch luminosity monitoring in the LHC

    CERN Document Server

    Brambilla, A; Jolliot, M; Bravin, E

    2008-01-01

    The luminosity at the four interaction points of the Large Hadron Collider (LHC) must be continuously monitored in order to provide an adequate tool for the control and optimisation of beam parameters. Polycrystalline cadmium telluride (CdTe) detectors have previously been tested, showing their high potential to fulfil the requirements of luminosity measurement in the severe environment of the LHC interaction regions. Further, the large signal yield and the fast response time should allow bunch-by-bunch measurement of the luminosity at 40 MHz with high accuracy. Four luminosity monitors with two rows of five polycrystalline CdTe detectors each have been fabricated and will be installed at both sides of the low-luminosity interaction points ALICE and LHC-b. A detector housing was specially designed to meet the mechanical constraints in the LHC. A series of elementary CdTe detectors were fabricated and tested, of which 40 were selected for the luminosity monitors. A sensitivity of 104 electrons per minimum ioni...

  5. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  6. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-07-15

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is Te-2+/Cd, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve 10^17 cm-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of 10^17 cm-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  7. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    Science.gov (United States)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  8. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  9. Aqueous synthesis of MPA-capped CdTe nanocrystals emitted in near infrared with high quantum yield.

    Science.gov (United States)

    Cao, Yongqiang; Liu, Ning; Yang, Ping; Zhu, Yuanna; Shi, Ruixia; Ma, Qian; Zhang, Aiyu

    2014-07-01

    The high luminescent near infrared (NIR)--emitting CdTe nanocrystals (NCs) with 3-mercaptopropionic acid (MPA) as the stabilized molecules had been sucessfully fabricated by a facile and simple water-reflux method. By virtue of the characterizations for the as-prepared MPA-capped CdTe NCs, such as UV-Vis absorption, steady-state photoluminescence (PL), time-resolved PL spectra and PL image, the optical properties, diameters and morphologies of the CdTe NCs were investigated detailedly. With the increase of reflux time, the PL peak wavelength of NCs gradually shifted from red light to NIR spectra range within 7 h, and the PL quantum yield (QY) was increased firstly and then decreased slightly. It was worth noted that the NCs still showed a relative high PL QY of 47% as well as a narrow full width at half maximum (FWHM) of PL spectra even when the NCs emitted at the NIR wavelength of 754 nm. In addition, the average PL lifetime also exhibited an obvious increase as the growth of CdTe NCs due to the formation of thin CdS shell on the surface of CdTe. The PL stabilities for these NIR-emitting NCs (754 nm) in phosphate-buffered saline (PBS) buffer solution with various concentrations ranged from 0.005 to 0.1 M were also checked accordingly, and the results indicated that the as-prepared NIR-emitting CdTe NCs had a satisfied PL stability, implying a potential application in the biological field. Hopefully, all the superiority of these NIR-emitting CdTe NCs, such as high PL QY and PL lifetime, narrow FWHM of PL spectra, high PL stability in PBS solution, would make them to be a good candidate for biological applications in future.

  10. Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V.; Kee, R.; Wolden, C.; Kestner, J.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Fahrenbruch, A.

    2000-05-30

    ITN's three year project Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High Efficiency Thin Film PV Devices has the overall objectives of improving thin film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16% efficient CdTe PV films, i.e., close spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstration of APCVD of CdTe films, discovery of fundamental mass transport parameters, application of established engineering principles to the deposition of CdTe films, and verification of reactor design principles which could be used to design high throughput, high yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation and ultimately to higher device conversion efficiency and greater stability. Under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two dimension measurements and modeling. Accomplishments of the second year of the APCVD subcontract include: deposition of the first APCVD CdTe; identification of deficiencies in the first generation APCVD reactor; design, fabrication and testing of a ``simplified'' APCVD reactor; deposition of the first dense, adherent APCVD CdTe films; fabrication of the first APCVD CdTe PV device; modeling effects of CdSTe and SnOx layers; and electrical modeling of grain boundaries.

  11. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

    Science.gov (United States)

    Wenisch, J.; Schirmacher, W.; Wollrab, R.; Eich, D.; Hanna, S.; Breiter, R.; Lutz, H.; Figgemeier, H.

    2015-09-01

    Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15- μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

  12. Reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Musca, C.A.; Smith, E.P.G.; Siliquini, J.F.; Dell, J.M.; Antoszewski, J.; Faraone, L. [Univ. of Western Australia, Nedlands, Western Australia (Australia). Dept. of Electrical and Electronic Engineering; Piotrowski, J. [Vigo System Ltd., Warsaw (Poland)

    1998-12-31

    Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x = 0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400 mT, CH{sub 4}/H{sub 2}, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (N{sub A}-N{sub D} = 2 {times} 10{sup 16} cm{sup {minus}3}, {mu} = 350 cm{sup 2}.V{sup {minus}1}.s{sup {minus}1}).

  13. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  14. Improvement of the crystallinity of CdTe epitaxial film grown on Si substrates by molecular beam epitaxy using the two-step growth method

    Energy Technology Data Exchange (ETDEWEB)

    Han, M.S.; Ryu, Y.S.; Song, B.K.; Kang, T.W. [Dongguk Univ., Seoul (Korea, Republic of). Dept. of Phys.; Kim, T.W. [Department of Physics, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

    1997-01-05

    Molecular beam epitaxy growth of CdTe epitaxial layers on Si (100) substrates using the two-step growth method was performed to produce high-quality CdTe thin layers. The reflection high-energy electron diffraction patterns were streaky with clear Kikuchi lines, which is direct evidence for layer-by-layer two-dimensional growth of CdTe on Si. From the X-ray diffraction analysis, the grown layer was found to be a CdTe (111) epitaxial film, regardless of the film thickness. Photoluminescence (PL) measurements at 12 K showed that the defect density of the CdTe film grown on Si using two-step growth decreased in comparison with that grown using direct growth. The bound exciton appearing in the PL measurements shifted to the low energy side as the thickness of the CdTe increased. When the CdTe thickness increased from 1 to 1.8 {mu}m, the peak position of the bound exciton shifted by 7.2 meV, and the stress obtained from the exciton peak shift was -12.405 kbar. These results indicate that high quality CdTe films grown by two-step growth hold promise for applications as buffer layers for the subsequent growth of Hg{sub x}Cd{sub 1-x}Te. (orig.) 16 refs.

  15. Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology

    Science.gov (United States)

    Péré-Laperne, Nicolas; Berthoz, Jocelyn; Taalat, Rachid; Rubaldo, Laurent; Kerlain, Alexandre; Carrère, Emmanuel; Dargent, Loïc.

    2016-05-01

    Sofradir recently presented Daphnis, its latest 10 μm pitch product family. Both Daphnis XGA and HD720 are 10μm pitch mid-wave infrared focal plane array. Development of small pixel pitch is opening the way to very compact products with a high spatial resolution. This new product is taking part in the HOT technology competition allowing reductions in size, weight and power of the overall package. This paper presents the recent developments achieved at Sofradir to make the 10μm pitch HgCdTe focal plane array based on the legacy technology. Electrical and electro-optical characterizations are presented to define the appropriate design of 10μm pitch diode array. The technological tradeoffs are explained to lower the dark current, to keep high quantum efficiency with a high operability above 110K, F/4. Also, Sofradir recently achieved outstanding Modulation Transfer Function (MTF) demonstration at this pixel pitch, which clearly demonstrates the benefit to users of adopting 10μm pixel pitch focal plane array based detectors. Furthermore, the HgCdTe technology has demonstrated an increase of the operating temperature, plus 40K, moving from the legacy to the P-on-n one at a 15μm pitch in mid-wave band. The first realizations using the extrinsic P-on-n technology and the characterizations of diodes with a 10μm pitch neighborhood will be presented in both mid-wave and long-wave bands.

  16. Crystallization from amorphous structure to hexagonal quantum dots induced by an electron beam on CdTe thin films

    Science.gov (United States)

    Becerril, M.; Zelaya-Angel, O.; Medina-Torres, A. C.; Aguilar-Hernández, J. R.; Ramírez-Bon, R.; Espinoza-Beltran, F. J.

    2009-02-01

    Amorphous cadmium-telluride films were prepared by rf sputtering on Corning 7059 glass substrates at room temperature. The deposition time was 10 and 12 h with a thickness of 400 and 480 (±40 nm), respectively. As-prepared films were amorphous according to X-ray diffraction (XRD) patterns, but a win-fit-software analysis of the main XRD broad band suggests a wurtzite structure at short range. Transmission electron microscopy (TEM) at 200 keV produces crystallization of the amorphous CdTe. The TEM-electron beam induces the formation of CdTe quantum dots with the wurtzite hexagonal structure (the metastable structure of CdTe) and with ˜6 nm of average grain size. As effect of a probable distortion of the CdTe crystalline lattice, the unit cell volume (UCV) shrinks to about 30% with respect to the bulk-UCV of CdTe. Besides, the energy band gap increases as expected, according to literature data on quantum confinement.

  17. Synthesis and characterization of magnetic and luminescent Fe3O4/CdTe nanocomposites using aspartic acid as linker

    Institute of Scientific and Technical Information of China (English)

    Xiu Ling Wang; Lu Wei; Guan Hong Tao; Meng Qiong Huang

    2011-01-01

    In this study, the preparation of a new kind of magnetic and luminescent Fe3O4/CdTe nanocomposites was demonstrated. Superparamagnetic Fe3O4 nanoparticles were first synthesized by hydrothermal coprecipitation of ferric and ferrous ions, followed by the modification of their surfaces with tetramethylammonium hydroxide (TMAOH) and the chemical activation with aspartic acid. The surface-modified Fe3O4 nanoparticles were then covalently coated with CdTe quantum dots (QDs), which were modified with mercaptoacetic acid (MPA), to form the Fe3O4/CdTe magnetic and luminescent nanocomposites through the coordination of the amino groups on the surfaces of Fe3O4 and the carboxyl groups on CdTe QDs. The structure and properties of as-synthesized nanocomposites were characterized. It was indicated that the nanocomposites possessed structure with an average diameter of 40-50 nm, yellow-green emission feature and room temperature ferro-magnetism. Both the fluorescence and UV-vis absorption spectra of the nanocomposites showed a blue shift comparing with those of CdTe QDs. The mechanism of the blue shift was presented. The nanocomposites retained the ferromagnetic property with a saturation magnetization of 8.9 emu/g.

  18. Photo-responsivity characterizations of CdTe films for direct-conversion X-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ryun Kyung; Cha, Bo Kyung; Jeon, Sung Chae; Seo, Chang Woo [Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Yun, Seung Man [Pusan National University, Busan (Korea, Republic of)

    2014-08-15

    We have fabricated and investigated thin, polycrystalline, cadmium-telluride (CdTe) films in order to utilize them for optical switching readout layers in direct-conversion X-ray detectors. The polycrystalline CdTe films are fabricated on ITO glasses by using the physical vapor deposition (PVD) method at a slow deposition rate and a pressure of 10{sup -6} torr. CdTe films with thicknesses of 5 and 20 μm are grown. The electrical and the optical characteristics of the CdTe films are investigated by measuring the dark-current and the photo-current as functions of the applied field under different wavelengths of light. Higher photo-currents are generated at the longer wavelengths of light for the same applied voltage. When a higher electrical field is applied to the 20 μm-thick CdTe film, a higher dark-current, a higher photo-current, a larger number of charges, and a higher quantum efficiency are generated.

  19. High-throughput and rapid fluorescent visualization sensor of urinary citrate by CdTe quantum dots.

    Science.gov (United States)

    Zhuo, Shujuan; Gong, Jiajia; Zhang, Ping; Zhu, Changqing

    2015-08-15

    In this paper, we have presented a novel CdTe quantum dots (QDs) based fluorescent sensor for visual and turn-on sensing of citrate in human urine samples. The europium ion (Eu(3+)) can lead to the fluorescence quenching of thioglycollic acid (TGA) modified CdTe QDs due to photoinduced electron transfer accompanied by the change of emission color from yellow to orange. Next, addition of citrate breaks the preformed assembly because citrate can replace the CdTe QDs, based on the fact that the Eu(3+) ion displays higher affinity with citrate than the CdTe QDs. Thus the photoinduced electron transfer is switched off, and the fluorescence emission of CdTe QDs is rapidly (within 5min) recovered, simultaneously, the orange emission color restores to yellow. Such proposed strategy may conveniently discriminate the patient of renal stone from normal person by naked eyes. In addition to visualization detection, the fluorescence responses can be used for well quantifying citrate in the range of 0.67-133μM. So, the present, simple, low-cost and visualized citrate fluorescence sensor has great potential in the applications for earlier screening in clinical detection.

  20. Synthesis and bio-imaging application of highly luminescent mercaptosuccinic acid-coated CdTe nanocrystals.

    Directory of Open Access Journals (Sweden)

    Erbo Ying

    Full Text Available Here we present a facile one-pot method to prepare high-quality CdTe nanocrystals in aqueous phase. In contrast to the use of oxygen-sensitive NaHTe or H(2Te as Te source in the current synthetic methods, we employ more stable sodium tellurite as the Te source for preparing highly luminescent CdTe nanocrystals in aqueous solution. By selecting mercaptosuccinic acid (MSA as capping agent and providing the borate-citrate acid buffering solution, CdTe nanocrystals with high quantum yield (QY >70% at pH range 5.0-8.0 can be conveniently prepared by this method. The influence of parameters such as the pH value of the precursor solution and the molar ratio of Cd(2+ to Na(2TeO(3 on the QY of CdTe nanocrystals was systematically investigated in our experiments. Under optimal conditions, the QY of CdTe nanocrystals is even high up to 83%. The biological application of luminescent MSA-CdTe to HEK 293 cell imaging was also illustrated.

  1. Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Vlasov, V. P.; Kanevsky, V. M.

    2016-11-01

    The growth of cadmium telluride films on a structured (0001) sapphire surface oriented at an angle of 44° to the vapor-flow direction and normal to the steps formed along the 11overline 2 0 direction is studied. It is found that this geometry of the vapor source and a substrate (heated to a temperature of 300°C) provides the growth of single-crystal CdTe films if a step height on the substrate surface is more than 1 nm. The results are explained by the occurrence of a longitudinal component of the diffusion flux of CdTe molecules and atoms toward the steps from the inner side and their high density at the step edge from the outer side due to the presence of the Ehrlich-Schwoebel barrier, which ensures the efficient supply of material and minimum supersaturation necessary for the nucleation at the step edge and growth of oriented CdTe islands. The cadmium telluride films that are grown have the ( {110} )[ {1overline 1 0} ]CdTe| {( {0001} )} .[ {11overline 2 0} ]A{l_2}{O_3} orientation and a composition similar to stoichiometric CdTe.

  2. A computational ab initio study of surface diffusion of sulfur on the CdTe (111 surface

    Directory of Open Access Journals (Sweden)

    Ebadollah Naderi

    2016-08-01

    Full Text Available In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111 A-type (Cd-terminated and B-type (Te-terminated surfaces within the density functional theory (DFT. The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  3. A 4K x 4K HgCdTe astronomical camera enabled by the JWST NIR detector development program

    Science.gov (United States)

    Hall, Donald N. B.; Luppino, Gerard; Hodapp, Klaus W.; Garnett, James D.; Loose, Markus; Zandian, Majid

    2004-09-01

    The ambitious science goals of the James Webb Space Telescope (JWST) have driven spectacular advances in λco ~ 5um detector technology over the past five years. This paper reviews both the UH/RSC team"s Phase A development and evaluation of 2Kx2K arrays exceeding the detector requirements for JWST"s near infrared instruments and also the hardware integration of these into a 4Kx4K (16Mpxl) close packed mosaic focal plane array housed in an Ultra Low Background test facility. Both individual first generation 2Kx2K SCA"s and 4Kx4K mosaic focal planes have been extensively characterized in the laboratory and, since September 2003, a NIR camera utilizing the 4Kx4K mosaic focal plane has been in use for nearly 100 nights at the UH 2.2 m telescope on Mauna Kea. Typical test results for the first generation 2Kx2K arrays and their integration into 4Kx4K mosaic focal planes are reported. Demonstration of the design concepts and both array and mosaic focal plane performance in actual hardware, as described here, has provided the foundation for design iterations leading to later generations of 2Kx2K arrays and 4Kx4K mosaic focal planes. Four major technology developments leading to first generation hardware demonstrations of both 2Kx2K SCA"s and a 4Kx4K mosaic FPA are reviewed. These are: 1) improvement in test equipment and procedures to characterize the detectors against JWST requirements and goals, primarily at 37K but with the capability to test from 30K to 100K; 2) optimization of λc ~ 5 um MBE HgCdTe material on a CZT substrate for low dark current (goal of 0.003 e-/sec at 37K) with high quantum efficiency, low cross-talk and greatly reduced image persistence; 3) development of the 2Kx2K HAWAII-2RG multiplexer designed specifically to take full advantage of these detector characteristics for a wide range of astronomical applications (and fully compatible with an ASIC controller developed under the JWST Instrument Technology Development initiative) and 4) development of

  4. Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

    1994-09-01

    Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

  5. Effect of CdTe Deposition Conditions by Close Spaced Sublimation on Photovoltaic Properties of CdS/CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Han, B.W.; Ahn, J.H.; Ahn, B.T. [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

    1998-06-01

    CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thickness of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3 X 10{sup 4} {Omega}.cm. For constant substrate temperature the optimum substrate temperature for CdTe deposition was 600 deg. C. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 620 deg. C, and then deposited at 540 deg. C. The CdTe film was annealed at 620 deg. C and 600 deg. C sequentially to maintain the CdTe film quality. The photovoltaic cell efficiency improved by the two-wave process. For constant substrate temperature, the optimum thickness for CdTe was 5-6{mu}m. Above 6{mu}m CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the V{sub oc} remained almost constant, while J{sub sc} and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITO layer in this study was 300-450nm. In this experiment we obtained the efficiency of 9.4% in the 0.5cm{sup 2} cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency. (author). 9 refs.,10 figs.

  6. Temperature induced stress phase transition in CdTe quantum dots observed by dielectric constant and thermal diffusivity measurements

    Science.gov (United States)

    Moreira, S. G. C.; da Silva, E. C.; Mansanares, A. M.; Barbosa, L. C.; Cesar, C. L.

    2007-07-01

    The authors measured the dielectric constant by capacitance method and the thermal diffusivity by thermal lens technique in the temperature range from 20to300K for CdTe quantum dot doped borosilicate glass samples. Results show a huge difference between the thermal behavior of the pure glass matrix, without quantum dots, and of the doped glass, especially around 90 and 250K. The authors attributed this difference to the phase transition experienced by the CdTe nanocrystals due to the high pressure exerted by the glass matrix over the CdTe quantum dots. The temperature induced stress is caused by the thermal expansion coefficient mismatch between the quantum dot and the glass matrix.

  7. Nitric-phosphoric acid etching effects on the surface chemical composition of CdTe thin film.

    Science.gov (United States)

    Irfan, Irfan; Ding, Huanjun; Xia, Wei; Lin, Hao; Tang, Ching W.; Gao, Yongli

    2009-03-01

    Nitric-phosphoric (NP) acid etching has been regarded as one of the most successful methods for the formation of low resistance back contact with the metal electrode in CdTe based solar cells. We report back surface chemical composition for eight different durations of NP etching of CdTe polycrystalline thin film. We studied the surfaces with x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IEPS) and atomic force microscopy (AFM). Etching dependence on the back surface composition and electronic structure was observed. Valence and conduction band shifts relative to the Fermi level of the system with different etching duration were analyzed. The sample was left in open ambient condition for three weeks and XPS data were obtained again in order to study the difference in surface chemical composition with the pristine CdTe film. Unetched and highly etched part of the sample were sputtered and the depth profile analyzed.

  8. (CdTe)0.05(ZnSe)0.95 solid solution application in carbon monoxide diagnostics

    Science.gov (United States)

    Podgornyi, S. O.; Podgornaya, O. T.; Demeshko, I. P.; Lukoyanova, O. V.; Muromtsev, I. V.

    2017-08-01

    The research centered on (CdTe)0.05(ZnSe)0.95 solid solutions. The article is aimed at developing innovative primary transducer material for semi-conductor sensors, investigating their surface physicochemical properties and evaluation their applicability in carbon monoxide diagnostics. Powders and nanofilms of (CdTe)0.05(ZnSe)0.95 solid solutions were obtained by isothermal diffusion and discrete thermal evaporation in vacuum. (CdTe)0.05(ZnSe)0.95 applicability in gas analysis was investigated. Adsorption properties of the given material for carbon oxide (II) were studied by the piezoquartz microweighing, volumetrically and IR spectroscopy of multiple disturbed complete internal reflections. The principles of adsorption, depending on the process conditions, were established. Based on the obtained experimental data, CO micro-impurities sensors were developed, the laboratory tests passed successfully.

  9. Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Araki, N.; Miyata, M.; Kitagawa, S.; Kojima, M.; Ozawa, J.; Tsubota, S.; Yamaguchi, T.; Agata, Y.

    2017-09-01

    Dry etching characteristics of single crystal (100) CdTe epitaxial layers grown on GaAs substrates were studied using CH4, H2, and Ar as process gases in an electron cyclotron resonance plasma. A smooth and anisotropic etching was obtained with CH4, H2, and Ar. No hydrocarbon polymer was found on the etched surface, which was confirmed by x-ray photoelectron spectroscopy measurement. Etching of the CdTe surface was also possible with H2 and Ar; however, no etching was observed in the absence of H2. Dependence of the etch rate on plasma gas composition and flow rates was studied. Mechanisms of etching with and without CH4 supply were also studied. Etched CdTe layers also showed no deterioration of electrical properties, which was confirmed by photoluminescence measurement at 4.2 K and Hall measurement at 300 K.

  10. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  11. Porous CdTe nanocrystal assemblies: ligation effects on the gelation process and the properties of resultant aerogels.

    Science.gov (United States)

    Yao, Qinghong; Brock, Stephanie L

    2011-10-17

    Highly porous CdTe nanoarchitectures (aerogels) were prepared by sol-gel assembly of discrete nanocrystals followed by supercritical CO(2) drying. CdTe nanocrystal surface functionalization (either phosphine oxide or thiolate) is found to be immaterial to oxidation induced gel formation suggesting that the standard thiolate capping procedure is not a necessary step in the gelation process. On the basis of this observation, and reduction induced dispersion of the gel network, the exposure of reactive sites and the subsequent surface oxidation reaction to form polychalcogenide linkages are key steps in the gelation mechanism. Consequently, CdTe aerogels exhibit similar physicochemical properties, regardless of original ligating functionality. The aerogels are mesoporous, with surface area >100 m(2)/g, and exhibit an optical bandgap of 1.92 eV, consistent with quantum confinement within the 3-D linked network. Photoluminescence is suppressed in the aerogels, but can be partially recovered upon heating.

  12. Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Grecu, D. [University of Toledo, Toledo, Ohio 43606-3390 (United States); Compaan, A. D. [University of Toledo, Toledo, Ohio 43606-3390 (United States); Young, D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Jayamaha, U. [First Solar LLC., Perrysburg, Ohio 43551 (United States); Rose, D. H. [First Solar LLC., Perrysburg, Ohio 43551 (United States)

    2000-09-01

    We explore Cu electronic states in CdTe using photoluminescence as the main investigative method. Our results are consistent with some Cu atoms occupying substitutional positions on the Cd sublattice and with others forming Frenkel pairs of the type Cu{sub i}{sup +}-V{sub Cd}{sup -} involving an interstitial Cu and a Cd vacancy. In addition, we find that Cu-doped CdTe samples exhibit a significant ''aging'' behavior, attributable to the instability of Cu acceptor states as verified by our Hall measurements. The aging appears to be reversible by a 150-200 degree sign C anneal. Our results are used to explain efficiency degradation of some CdTe solar-cell devices which use Cu for the formation of a backcontact. (c) 2000 American Institute of Physics.

  13. Fabrication of solar cells based on polycrystalline CdTe thin films using an economical production. Energie

    Energy Technology Data Exchange (ETDEWEB)

    Tranchart, J.C.; Boucherez, P.

    1983-01-01

    Polycrystalline CdS and CdTe films were produced by serigraphy. High-quality CdS films were obtained, especially with CdCl as melting phase. In the field of CdTe films, further studies are required in order to improve the sintering process, the film porosity characteristics, and the electric resistivity which decides the serial conductivity of the n-CdS/p-CdTe structures. In the field of solar cells, quartz +In/sub 2/O/sub 3/+CdS+CdTe heterostructures with a photoelectric efficiency of 2.5% were obtained. This value is too low, even if the economic advantages of serigraphy are taken into account. Further studies should center on the sintering process for CdTe films.

  14. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

    Science.gov (United States)

    Yang, Y.-B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T.-M.; Wang, G.-C.

    2017-08-01

    Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (∼21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [ 1 bar2 1 bar]CdTe//[1 bar100]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

  15. Large area thin film CdTe and Zn(x)Cd(1-x)Te heterojunction solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Firszt, F.; Naseem, H. A.; Stawski, R.

    Thin film CdTe heterojunction solar cells have been prepared by the deposition of p-type CdTe films on CdS/SnO2:F/glass substrates using chemical vapor deposition (CVD) and close-spaced sublimation (CSS) techniques. The relative merits of the two techniques are discussed, and the characteristics of solar cells prepared by CVD and CSS techniques are compared. In addition, the properties of Zn(x)Cd(1-x)Te have been investigated.

  16. Characterization of intermixing at the CdS/CdTe interface in CSS deposited CdTe

    Science.gov (United States)

    Dhere, R. G.; Asher, S. E.; Jones, K. M.; Al-Jassim, M. M.; Moutinho, H. R.; Rose, D. H.; Dippo, P.; Sheldon, P.

    1996-01-01

    CdS/CdTe structures deposited on different substrates are analyzed using transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), optical transmission, atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL). The microstructure of CdTe was found to be independent of CdS crystallinity, and the structural defects at CdS/CdTe interface are generated principally by the lattice mismatch between CdS and CdTe. The interdiffusion at the CdS/CdTe interface was found to be a function of substrate temperature and CdCl2 heat treatment.

  17. Influence of deposition parameters on the properties of CdTe films deposited by close spaced sublimation

    OpenAIRE

    Falcão Vivienne Denise; Pinheiro Wagner Anacleto; Ferreira Carlos Luiz; Cruz Leila Rosa de Oliveira

    2006-01-01

    CdTe thin films are used as absorber layer in CdS/CdTe solar cells. The microstructure of this absorber layer plays a fundamental role in photovoltaic conversion and can be controlled by the deposition parameters used during the film growth. In this work, CdTe thin films were deposited by the CSS method onto glass substrates previously covered with In2O3:Sn. The effects of pressure, source temperature and substrate temperature on the microstructural properties of the films were studied. The p...

  18. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

  19. Investigation of polycrystalline CdTe thin films deposited by physical vapor deposition, close-spaced sublimation, and sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Hasoon, F.S.; Abulfotuh, F.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    1995-11-01

    CdTe thin films, deposited on different substrate structures by physical vapor deposition, sputtering, and close-spaced sublimation, have been treated with CdCl{sub 2} at several temperatures. The morphology of the films has been studied by atomic force microscopy, and the observations were correlated to results obtained from x-ray diffraction, cathodoluminescence, and minority-carrier lifetime measurements. The samples treated at 400 {degree}C resulted in the best device-quality films, independent of deposition method and underlying substrate structure. For the first time, a nanograin structure was observed in CdTe sputtered samples. copyright {ital 1995} {ital American} {ital Vacuum} {ital Society}.

  20. Development of a modular CdTe detector plane for gamma-ray burst detection below 100 keV

    OpenAIRE

    Ehanno, M.; Amoros, C.; Barret, D.; Lacombe, K.; Pons, R.; Rouaix, G.; Gevin, O.; Limousin, O.; Lugiez, F.; Bardoux, A.; Penquer, A.

    2007-01-01

    We report on the development of an innovative CdTe detector plane (DPIX) optimized for the detection and localization of gamma-ray bursts in the X-ray band (below 100 keV). DPIX is part of an R&D program funded by the French Space Agency (CNES). DPIX builds upon the heritage of the ISGRI instrument, currently operating with great success on the ESA INTEGRAL mission. DPIX is an assembly of 200 elementary modules (XRDPIX) equipped with 32 CdTe Schottky detectors (4x4 mm2, 1 mm thickness) produc...

  1. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  2. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  3. Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells

    OpenAIRE

    Gerbaux, X.; Pianelli, A.; Hadni, A.; Jeanniard, C.; Strimer, P.

    1980-01-01

    The growth of CdTe oriented thin films by the ENSH method - i.e. Epitaxial Nucleation in Sub-microscopic Holes of an intermediate layer closely applied on a bulk single crystal — has been recently described. The CdTe films are generally difficult to detach from the bulk crystal. However free films are needed to study the infrared transmission in the spectral region of high absorption. To get them, the vitreous or amorphous thin intermediate layers are substituted by quite soluble an oriented ...

  4. An optical and structural investigation into CdTe nanocrystals embedded into the tellurium lithium borophosphate glass matrix

    Institute of Scientific and Technical Information of China (English)

    WAGEH; S

    2010-01-01

    Cadmium telluride nanocrystals that form in the TeO2-Li2O-B2O3-P2O5 glass matrix have been synthesized and studied.They are investigated by X-ray diffraction(XRD),optical transmission and infrared spectroscopy.It has been shown that the long annealing time effect on present samples leads to the growth of CdTe nanoparticles and an increase of tellurium oxide on the surface of nanocrystallites.On the other hand,the infrared spectroscopy shows that the phosphate and borate networks of the glass matrices are modified with doping by CdTe nanoparticles.

  5. Preparation of luminescent CdTe quantum dots doped core-shell nanoparticles and their application in cell recognition

    Institute of Scientific and Technical Information of China (English)

    LI Zhaohui; WANG Kemin; TAN Weihong; LI Jun; FU Zhiying; WANG Yilin; LIU Jianbo; YANG Xiaohai

    2005-01-01

    Based on the reverse microemulsion technique, luminescent quantum dots doped core-shell nanoparticles have been prepared by employing silica as the shell and CdTe quantum dots as the core of the nanoparticles, which have an excellent solubility and dispersibility, especially amine and phosphonate groups have been modified on their surface synchronously. In comparison with CdTe quantum dots, these nanoparticles show superiority in chemical and photochemical stability. The quantum dots doped core-shell nanoparticles were successfully linked with lactobionic acid by amine group on it, which was used to recognize living liver cells.

  6. Optical properties of CdTe1-xSx (0<=x<=1): Experiment and modeling

    Science.gov (United States)

    Wei, K.; Pollak, Fred H.; Freeouf, J. L.; Shvydka, Diana; Compaan, A. D.

    1999-05-01

    Spectral ellipsometry at 300 K, in the range 0.75-5.4 eV, has been used to determine the optical constants ɛ(E)[=ɛ1(E)+iɛ2(E)] of a series of CdTe1-xSx (0⩽x⩽1) films fabricated by a laser-deposition process. The measured ɛ(E) data reveal distinct structures associated with critical points (CPs) at E0 (direct gap), spin-orbit split E1, E1+Δ1 doublet and E2. The experimental data over the entire measured spectral range (after oxide removal) has been fit using the Holden model dielectric function [Phys. Rev. B 56, 4037 (1997)] based on the electronic energy-band structure near these CPs (also E0+Δ0 CP) plus excitonic and band-to-band Coulomb enhancement (BBCE) effects. In addition to evaluating the energies of these various band-to-band CPs, our analysis also makes it possible to obtain information about the binding energies of not only the three-dimensional exciton associated with E0 but also the two-dimensional exciton related to the E1, E1+Δ1 CPs. Our results will be compared to previous experiments and modeling (which neglect the BBCE terms) of ɛ(E) of CdTe and CdS as well as optical absorption measurements of E0 of CdTe1-xSx (0⩽x⩽1). The results of this experiment demonstrate conclusively that the band-to-band line shape at E0 is BBCE even if the exciton is not resolved.

  7. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Punitha, K. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Sathe, Vasant; Ganesan, V. [UGC-DAE Consortium for Scientific Research, Indore 452001 (India)

    2014-12-07

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  8. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    Energy Technology Data Exchange (ETDEWEB)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  9. CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

    OpenAIRE

    Ghasem Rezanejade Bardajee; Zari Hooshyar

    2013-01-01

    This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs) by using poly(acrylic acid) grafted onto salep (salep-g-PAA) as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR) spectrum, thermogravimetric (TG) analysis, and transmission electron microscopy (TEM). The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical propertie...

  10. Grain boundaries in CdTe thin film solar cells: a review

    Science.gov (United States)

    Major, Jonathan D.

    2016-09-01

    The current state of knowledge on the impact of grain boundaries in CdTe solar cells is reviewed with emphasis being placed on working cell structures. The role of the chemical composition of grain boundaries as well as growth processes are discussed, along with characterisation techniques such as electron beam induced current and cathodoluminescence, which are capable of extracting information on a level of resolution comparable to the size of the grain boundaries. Work which attempts to relate grain boundaries to device efficiency is also assessed and gaps in the current knowledge are highlighted.

  11. Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Kroposki, B.; Strand, T.; Hansen, R. [National Renewable Energy Lab., Golden, CO (United States); Powell, R.; Sasala, R. [Solar Cells, Inc., Toledo, OH (United States)

    1996-05-01

    The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

  12. Photoresponse of hybrids made of carbon nanotubes and CdTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zebli, Bernd; Vieyra, Hugo A.; Kotthaus, Joerg P. [Department fuer Physik and Center for NanoScience (CeNS), Ludwig-Maximilians-Universitaet Muenchen, Geschwister-Scholl-Platz 1, 80539 Munich (Germany); Carmeli, Itai [Department of Chemistry and Biochemistry, Tel-Aviv University, Tel-Aviv 69978 (Israel); Hartschuh, Achim [Department fuer Chemie, Physikalische Chemie, Butenandtstr. 5-13 E, 81377 Munich (Germany); Holleitner, Alexander W. [Walter-Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

    2008-07-01

    We observe that the photoresponse of single-walled carbon nanotubes can be adjusted by the absorption characteristics of colloidal CdTe nanocrystals, which are bound to the side-walls of the carbon nanotubes via molecular recognition. To this end, the hybrid systems are characterized using charge transport measurements under resonant optical excitation of the carbon nanotubes and nanocrystals, respectively. We investigate the photoresponse of both ensembles of hybrid systems and single carbon-nanotube-nanocrystal-hybrids. The data suggest a bolometrically induced increase of the current in the carbon nanotubes, which is due to photon absorption in the nanocrystals.

  13. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Effects of temperature and deposition time on the RF- sputtered CdTe films preparation

    OpenAIRE

    E. Camacho-Espinosa; Rosendo, E.; T. Díaz; A. I. Oliva; V. Rejon; Peña, J. L.

    2014-01-01

    In this work, CdTe thin films were deposited by rf-sputtering at different substrate temperatures (room temperature (RT), 100, 150, 200, and 250 °C) and deposition times (30, 60, and 90 min). The applied power and vacuum pressure were maintained fixed for all depositions. A mean value of 18 .5 nm/s on the deposition rate was maintained for films deposition. The surface morphology, rms-roughness, and grain size of the sputtered-films were obtained from atomic force microscopy and scanning elec...

  15. Digital signal processing for CdTe detectors using VXIbus data collection systems

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

    1996-07-01

    Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

  16. Improvement to thin film CdTe solar cells with controlled back surface oxidation

    OpenAIRE

    Rugen-Hankey, S.L.; Clayton, Andrew J; Barrioz, Vincent; Kartopu, Giray; Irvine, Stuart J; McGettrick, J.D.; Hammond, D.

    2015-01-01

    Thin film CdTe solar cells were produced by MOCVD, at atmospheric pressure, under a hydrogen atmosphere (i.e. oxygen-free). Window layer alloying with zinc (forming Cd1−xZnxS) and extrinsic p-type doping with arsenic (giving CdTe:As) have been used to improve photovoltaic solar cell performances, but as-grown MOCVD-CdTe PV cells are still typically characterised by low Voc (~620–690 mV). Post-deposition annealing in air for 30 min at low temperature (170 °C) prior to evaporation of the back c...

  17. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    Directory of Open Access Journals (Sweden)

    Michael Powalla

    2007-01-01

    14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules. This contribution provides an overview of the basic technologies for CdTe and CIS modules, the research and development (R&D issues, production technology and capacities, the module performance in long-term outdoor testing, and their use in installations.

  18. Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

    Energy Technology Data Exchange (ETDEWEB)

    Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

    2017-08-17

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

  19. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  20. CdTe Quantum Dot/Dye Hybrid System as Photosensitizer for Photodynamic Therapy

    Directory of Open Access Journals (Sweden)

    Savateeva Diana

    2010-01-01

    Full Text Available Abstract We have studied the photodynamic properties of novel CdTe quantum dots—methylene blue hybrid photosensitizer. Absorption spectroscopy, photoluminescence spectroscopy, and fluorescence lifetime imaging of this system reveal efficient charge transfer between nanocrystals and the methylene blue dye. Near-infrared photoluminescence measurements provide evidence for an increased efficiency of singlet oxygen production by the methylene blue dye. In vitro studies on the growth of HepG2 and HeLa cancerous cells were also performed, they point toward an improvement in the cell kill efficiency for the methylene blue-semiconductor nanocrystals hybrid system.

  1. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    OpenAIRE

    A. Teyou Ngoupo; S. Ouédraogo; Zougmoré, F.; Ndjaka, J. M. B.

    2015-01-01

    Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O l...

  2. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    Science.gov (United States)

    Jambi, L. K.; Lees, J. E.; Bugby, S. L.; Tipper, S.; Alqahtani, M. S.; Perkins, A. C.

    2015-06-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported.

  3. CdTe Quantum Dot/Dye Hybrid System as Photosensitizer for Photodynamic Therapy

    Science.gov (United States)

    Rakovich, Aliaksandra; Savateeva, Diana; Rakovich, Tatsiana; Donegan, John F.; Rakovich, Yury P.; Kelly, Vincent; Lesnyak, Vladimir; Eychmüller, Alexander

    2010-04-01

    We have studied the photodynamic properties of novel CdTe quantum dots—methylene blue hybrid photosensitizer. Absorption spectroscopy, photoluminescence spectroscopy, and fluorescence lifetime imaging of this system reveal efficient charge transfer between nanocrystals and the methylene blue dye. Near-infrared photoluminescence measurements provide evidence for an increased efficiency of singlet oxygen production by the methylene blue dye. In vitro studies on the growth of HepG2 and HeLa cancerous cells were also performed, they point toward an improvement in the cell kill efficiency for the methylene blue-semiconductor nanocrystals hybrid system.

  4. Stoichiometry dependence of the optical and minority-carrier lifetime behaviors of CdTe epitaxial films: A low-temperature and time-resolved photoluminescence study

    Science.gov (United States)

    Tang, Kai; Zhu, Xuanting; Zhu, Liangqing; Bai, Wei; Bai, Jiawei; Dong, Wenxia; Yang, Jing; Zhang, Yuanyuan; Chen, Ye; Tang, Xiaodong; Chu, Junhao

    2016-11-01

    Cadmium telluride (CdTe) epitaxial films (EFs) were grown on near-lattice-matched Cd0.96Zn0.04Te (CZT) substrates by molecular beam epitaxy at different ambients to achieve Cd-rich samples with extra Cd molecular flux or Te-rich samples with extra Te molecular flux. The evolution of epitaxial growth was in situ monitored by reflection high-energy electron diffraction (RHEED). A two-dimensional growth mode was indicated by the streaky RHEED patterns. Crystal structures of the CdTe EFs were characterised by X-ray diffraction (XRD). XRD data suggested that the crystal quality of the CdTe EFs was improved by controlling the Cd and Te flux ratio. Low-temperature photoluminescence (PL) spectra were carried out in these CdTe EFs. The typical characteristic peak at ∼1.552 eV denoted as the bound-to-free transition was only found in CdTe samples grown under an extra Cd flux, and Cd vacancy-related defects were absent in the Cd-rich EFs, confirming the Cd-rich or Te-rich states of the epitaxial CdTe films. Finally, minority-carrier lifetime was prolonged in Cd-rich CdTe EFs as supported by time-resolved photoluminescence (TRPL) measurement.

  5. CdTe(1-x)Se(x)/Cd0.5Zn0.5S core/shell quantum dots: core composition and property.

    Science.gov (United States)

    Yang, Ping; Cao, Yongqiang; Li, Xiaoyu; Zhang, Ruili; Liu, Ning; Zhang, Yulan

    2014-08-01

    Alloy CdTe(1-x)Se(x) quantum dots (QDs) have been fabricated by an organic route using Cd, Te and Se precursors in a mixture of trioctylamine and octadecylphosphonic acid at 280 °C. The variation of photoluminescence (PL) peak wavelength of the CdTe(1-x)Se(x) QDs compared with CdTe QDs confirmed the formation of an alloy structure. The Se component drastically affected the stability of CdTe(1-x)Se(x) QDs. A Cd0.5Zn0.5S shell coating on CdTe(1-x)Se(x) cores was carried out using oleic acid as a capping agent. CdTe(1-x)Se(x)/Cd0.5Zn0.5S core/shell QDs revealed dark red PL while a yellow PL peak was observed for the CdTe(1-x)Se(x) cores. The PL efficiency of the core/shell QDs was drastically increased (less than 1% for the cores and up to 65% for the core/shell QDs). The stability of QDs in various buffer solutions was investigated. Core/shell QDs can be used for biological applications because of their high stability, tunable PL and high PL efficiency.

  6. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    OpenAIRE

    M. Rigana Begam; N. Madhusudhana Rao; S. Kaleemulla; M. Shobana; N. Sai Krishna; M. Kuppan

    2013-01-01

    Nanocrystalline Cadmium Telluride (CdTe) thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111) preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decre...

  7. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    M. Rigana Begam

    2013-07-01

    Full Text Available Nanocrystalline Cadmium Telluride (CdTe thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111 preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decreased from 2.87 eV to 2.05 eV with the increase of the crystallite size.

  8. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    Science.gov (United States)

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18)F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8.

  9. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    Science.gov (United States)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  10. Imaging detector development for nuclear astrophysics using pixelated CdTe

    Science.gov (United States)

    Álvarez, J. M.; Gálvez, J. L.; Hernanz, M.; Isern, J.; Llopis, M.; Lozano, M.; Pellegrini, G.; Chmeissani, M.

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a γ-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a γ-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11×11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident γ-ray photon. First measurements of a 133Ba and 241Am source are reported here.

  11. Imaging detector development for nuclear astrophysics using pixelated CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez, J.M., E-mail: alvarez@ieec.uab.e [Institut de Ciencies de l' Espai (CSIC-IEEC), Campus UAB, E-08193 Barcelona (Spain); Galvez, J.L.; Hernanz, M.; Isern, J.; Llopis, M. [Institut de Ciencies de l' Espai (CSIC-IEEC), Campus UAB, E-08193 Barcelona (Spain); Lozano, M.; Pellegrini, G. [Centro Nacional de Microelectronica - IMB-CNM (CSIC), Campus UAB, E-08193 Barcelona (Spain); Chmeissani, M. [Institut de Fisica d' Altes Energies (IFAE), Campus UAB, E-08193 Barcelona (Spain)

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a {gamma}-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a {gamma}-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11x11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident {gamma}-ray photon. First measurements of a {sup 133}Ba and {sup 241}Am source are reported here.

  12. Thiol capped colloidal CdTe quantum dots synthesized using laser ablation

    Science.gov (United States)

    Almeida, D. B.; Rodriguez, E.; Moreira, R. S.; Agouram, S.; Barbosa, L. C.; Jimenez, E.; Cesar, C. L.

    2009-08-01

    Semiconductor quantum dots [QD] have shown a great number of applications from fluorescent markers to solar cell devices. Colloidal systems have been usually obtained through chemical synthesis, that have to be devoleped for each material. The best quality QDs have been obtained with non-aqueous solution and non-physiological pH, requiring a posterior processing to be used in biology, for example. In contrast, the same physical synthetic method, such as laser ablation, would be applied to any semiconductor, metallic or dielectric material. Colloidal QD can be obtained by laser ablation of a target inside any solvent, given this method a very large flexibility. The fluorescence efficiency, however, depend on the surface traps and stability of colloids. The usual method to avoid surface traps is to grow a cap layer to passivate its surface and, at the same time, stabilize the colloid, sterically or electrostatically. In this work we report a novel technique for obtain thiol capped CdTe colloidal quantum dots in one step. A target immerse in a solution of ethanol and 3-mercaptopropyltrimethoxysilane (MPS), or thiol, was hit by a nanosecond 532 nm laser. With this assembly CdTe luminescent QDs were obtained. The colloid photoluminescence and other optical and structural properties are studied.

  13. Overcoming degradation mechanisms in CdTe solar cells: First annual report, August 1998--August 1999

    Energy Technology Data Exchange (ETDEWEB)

    Cahen, D.; Gartsman, K.; Hodes, G.; Rotlevy, O.; Visoly-Fisher, I,; Dobson, K.

    2000-02-28

    The authors have studied the importance of chemical processes for the stability of CdTe solar cells, in particular, diffusion in the ohmic contact/absorber junction regions. Both whole cells and test systems containing only the ohmic contact and the absorber are used. They found several experimental methods to be useable tools to follow the effects of impurity diffusion on the CdTe grain boundaries, grain bulk, and surface. In addition, they have explored alternative contacting schemes. The first year of activities led to the following tentative conclusions: Grain boundaries in CdTe/CdS cells are NOT fully passivated and are expected to be electrically active; There appears to be fast ionic diffusion in the vicinity of the Cu/HgTe/graphite back-contact, possibly enhanced by grain boundary diffusion; The macroscopic response to stress is different for cells with identical back-contact, but from different manufacturers. Different factors and/or different reactions to identical factors are possibly at work here; and Ni-P appears to be a promising back-contact material.

  14. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  15. Physical properties of spray deposited CdTe thin films: PEC performance

    Institute of Scientific and Technical Information of China (English)

    V. M. Nikale; S. S. Shinde; C. H. Bhosale; K.Y. Rajpure

    2011-01-01

    p-CdTe thin films were prepared by spray pyrolysis under different ambient conditions and characterized using photoelectrochemical (PEC),X-ray diffraction (XRD),scanning electron microscopy,energy-dispersive analysis by X-ray (EDAX),and optical transmission studies.The different preparative parameters viz solution pH,solution quantity,substrate temperature and solution concentration have been optimized by the PEC technique in order to get good-quality photosensitive material.XRD analysis shows the polycrystalline nature of the film,having cubic structure with strong (111) orientation.Micrographs reveal that grains are uniformly distributed over the surface of the substrate indicating the well-defined growth ofpolycrystalline CdTe thin film.The EDAX study for the sample deposited at optimized preparative parameters shows the nearly stoichiometric Cd:Te ratio.Optical absorption shows the presence of direct transition with band gap energy of 1.5 eV.Deposited films exhibit the highest photocurrent of 2.3 mA,a photovoltage of 462 mV,a 0.48 fill factor and 3.4% efficiency for the optimized preparative parameters.

  16. CdTe detector efficiency calibration using thick targets of pure and stable compounds

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C.; Taborda, A., E-mail: ataborda@itn.pt; Reis, M.A.

    2012-02-15

    Quantitative PIXE measurements require perfectly calibrated set-ups. Cooled CdTe detectors have good efficiency for energies above those covered by Si(Li) detectors and turn on the possibility of studying K X-rays lines instead of L X-rays lines for medium and eventually heavy elements, which is an important advantage in various cases, if only limited resolution systems are available in the low energy range. In this work we present and discuss spectra from a CdTe semiconductor detector covering the energy region from Cu (K{sub {alpha}1} = 8.047 keV) to U (K{sub {alpha}1} = 98.439 keV). Pure thick samples were irradiated with proton beams at the ITN 3.0 MV Tandetron accelerator in the High Resolution High Energy PIXE set-up. Results and the application to the study of a Portuguese Ossa Morena region Dark Stone sample are presented in this work.

  17. Micro through nanostructure investigations of polycrystalline CdTe. Correlations with processing and electronic structures

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Moutinho, H.R.; Hasoon, F.S.; Keyes, B.M.; Ahrenkiel, R.K.; Al-Jassim, M.; Kazmerski, L.L. [National Renewable Energy Laboratory, Golden, CO (United States); Birkmire, R.W. [Institute of Energy Conversion, University of Delaware, Newark, DW (United States)

    1996-06-10

    This paper provides first-time correlations of the nanoscale physical structure with the macroscale electronic and optical properties of CdTe/CdS thin films for several standard deposition techniques. Atomic force microscopy (AFM) was used to determine the micro and nanostructures of polycrystalline CdTe thin films used in photovoltaic (PV) cell fabrication. Photoluminescence (PL) was used to determine band gap, relative defect density, and photoexcited carrier lifetime. Cross-sectional scanning tunneling microscopy (STM) was used to determine the nanoscale electronic properties. Nanostructural features (nanograins), beyond the spatial resolution of conventional scanning electron microscopy (SEM), were observed and characterized in as-deposited CdTe. The correlations of the proximal probe measurements of the physical and electronic structure with the optically determined electronic properties were used to show the effects of the chemical and heat processing, directly and conclusively. A particularly striking effect with important implications for PV applications is the diffusion of sulfur across the CdTe/CdS interface during heat treatment

  18. Alternative procedure for the fabrication of close-spaced sublimated CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Dhere, R. G. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Ballif, C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Al-Jassim, M. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kazmerski, L. L. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2000-07-01

    We deposited CdTe thin films by close-spaced sublimtation using an alternative procedure, with temperatures about 170 degree sign C lower than the ones used in the standard procedure. These films were used in the fabrication of all thin-film CdTe/CdS solar cells. We treated the cells using the well-established CdCl{sub 2} dipping process as well as a new vapor treatment. The vapor process was more reproducible and easier to control, and it produced the best devices. This process was also much more effective in the recrystallization of the CdTe films. The best device that we produced had an efficiently of 11.6%, close to the 12.3% efficiency of the best device fabricated using the standard process. These results show that the new process has good potential, and besides being an alternative for lower-cost solar cell production, it can also produce high-efficiency devices. (c) 2000 American Vacuum Society.

  19. Preparation of giant unilamellar CdTe quantum dot vesicles and their metabolic pathway in vivo

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Glutathione (GSH) capped CdTe quantum dots (QDs) with photoluminescence quantum yields of 61% and the maximum emitting at 601.2 nm were prepared in water phase.Giant unilamellar CdTe quantum dot vesicles (GUVs-CdTe),with diameters larger than 1.5 μm,were obtained using lower-pressure evaporation techniques with soybean lecithin.Compared with other QD liposomes,the entrapment efficiency of GUVs-CdTe for QDs has been significantly improved to 86.3%.After GUVs-CdTe were injected into mice through the tail vein,the fluorescence microscopy of tissue sections showed that GUVs-CdTe could not pass through the blood-brain barrier and air-blood barrier,which were removed mostly by the reticuloendothelial system and were widely distributed in the spleen and the liver.This behavior is the same as the character of the metabolic pathway of giant unilamellar vesicles by intravenous injections in mice.

  20. NUMERICAL SIMULATION AND OPTIMIZATION OF PERFORMANCES OF A SOLAR CELL BASED ON CdTe

    Directory of Open Access Journals (Sweden)

    A. M. Ferouani

    2015-07-01

    Full Text Available This article has as an aim the study and the simulation of the photovoltaic cells containing CdTe materials, contributing to the development of renewable energies, and able to feed from the houses, the shelters as well as photovoltaic stations… etc. CdTe is a semiconductor having a structure of bands with an indirect gap of a value of 1,5 eV at ambient temperature what means that photon wavelength of approximately 1200 nm will be able to generate an electron-hole pair. One speaks about photogeneration. We will lay the stress, initially, on the essential design features of a photovoltaic module (the open-circuit tension, the short-circuit current, the fill factor, and the output of the cell, our results was simulated with the SCAPS computer code in one dimension which uses electrical characteristics DC and AC of the thin layers heterojunctions. The results obtained after optimization are: VCO = 0.632V, Jsc = 39.1 mA/cm2, FF=82.98 % and the output energy of conversion is 18.26%.Optimization is made according to the temperature and the wavelength.