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Sample records for hgcdte avalanche photodiode

  1. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  2. Impulse response measurement in the HgCdTe avalanche photodiode

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2018-04-01

    HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

  3. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    Science.gov (United States)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  4. HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

    2017-01-01

    We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

  5. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    Science.gov (United States)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  6. Proof-of-concept and feasibility demonstrations for an avalanche photodiode/photoelastic modulator-based imaging polarimeter

    Data.gov (United States)

    National Aeronautics and Space Administration — Building on the successful heritage of JPL’s Multiangle SpectroPolarimetric Imager (MSPI), we propose infusing HgCdTe avalanche photodiode (APD) array technology...

  7. Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Lauenstein, Jean-Marie; Sullivan, William III; Beck, Jeff; Hubbs, John E.

    2018-01-01

    We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

  8. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  9. HgCdTe e-avalanche photodiode detector arrays

    Directory of Open Access Journals (Sweden)

    Anand Singh

    2015-08-01

    Full Text Available Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

  10. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  11. Gallium-based avalanche photodiode optical crosstalk

    International Nuclear Information System (INIS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-01-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

  12. SWIR HgCdTe avalanche photiode focal plane array performances evaluation

    Science.gov (United States)

    de Borniol, E.; Rothman, J.; Salveti, F.; Feautrier, P.

    2017-11-01

    One of the main challenges of modern astronomical instruments like adaptive optics (AO) systems or fringe trackers is to deal with the very low photons flux detection scenarios. The typical timescale of atmospheric turbulences being in the range of some tens of milliseconds, infrared wavefront sensors for AO systems needs frame rates higher than 1 KHz leading to integration times lower than 1 ms. This integration time associated with a low irradiance results in a few number of integrated photons per frame per pixel. To preserve the information coming from this weak signal, the focal plane array (FPA) has to present a low read out noise, a high quantum efficiency and a low dark current. Up to now, the output noise of high speed near infrared sensors is limited by the silicon read out circuit noise. The use of HgCdTe avalanche photodiodes with high gain at moderate reverse bias and low excess noise seems then a logical way to reduce the impact of the read noise on images signal to noise ratio. These low irradiance passive imaging applications with integration times in the millisecond range needs low photodiode dark current and low background current. These requirements lead to the choice of the photodiode cut off wavelength. The short wave infrared (SWIR) around 3 μm is a good compromise between the gain that can be obtain for a given APD bias and the background and dark current. The CEA LETI HgCdTe APD technology, and a fine analysis of the gain curve characteristic are presented in [1] and won't be detailed here. The response time of the APD is also a key factor for a high frame rate FPA. This parameter has been evaluated in [2] and the results shows cut off frequencies in the GHz range. In this communication we report the performances of a SWIR APD FPA designed and fabricated by CEA LETI and SOFRADIR for astrophysical applications. This development was made in the frame of RAPID, a 4 years R&D project funded by the French FUI (Fond Unique Interministériel). This

  13. Investigation of avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

  14. Investigation of avalanche photodiodes

    International Nuclear Information System (INIS)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO 4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO 4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm 2 . We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

  15. Large area avalanche MRS-photodiodes for nuclear spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ermalitski, F A; Zalesski, V B

    1996-12-31

    Problems of application of avalanche photodiodes (APD) in readout systems of nuclear spectrometers are considered. APD`s with a large sensitive area of a diameter 1-5 mm and a high multiplication coefficient 200-1000 are created. MPS-photodiodes provide for the energy resolution 80% at temperature 231 K for detecting gamma-quanta with energy 662 keV. 4 refs.

  16. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  17. Avalanche photodiodes for ISABELLE detectors

    International Nuclear Information System (INIS)

    Strand, R.C.

    1979-01-01

    At ISABELLE some requirements for detecting bursts of photons are not met by standard photomultiplier tubes. The characteristics of immunity to magnetic fields, small size (few mm), low power consumption (approx. 100 mW), insensitivity to optical overloads, and wide dynamic range (approx. 60 dB) are achieved with difficulty, if at all, with PMTs. These are characteristics of the solid state avalanche photodiode (APD), the preferred detector for light-wave communications. Successful field tests with APD detectors stimulated the design of standard optical-fiber communication systems to replace wire carriers by the early 1980's. In other characteristics, i.e., counting rate, pulse-height resolution, effective quantum efficiency, detection efficiency, and reliability, bare APDs are equivalent to standard PMTs. APDs with currently available amplifiers cannot resolve single photoelectrons but they could provide reasonable detection efficiencies and pulse-height resolution for packets of approx. > 100 photons. Commercially available APDs can cost up to 100 times as much as PMTs per active area, but they are potentially much cheaper. Six topics are discussed: (1) detectors for light-wave communication and detectors for particles, (2) avalanche photodiodes, (3) commercially available APDs, (4) dynamic response of PMTs and bare APDs, (5) photon counting with cold APDs, and (6) conclusions and recommendations

  18. Optical fibers and avalanche photodiodes for scintillator counters

    International Nuclear Information System (INIS)

    Borenstein, S.R.; Palmer, R.B.; Strand, R.C.

    1980-01-01

    Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

  19. Investigation of the performance of alpha particle counting and alpha-gamma discrimination by pulse shape with micro-pixel avalanche photodiode

    International Nuclear Information System (INIS)

    Ahmadov, G.; Madatov, R.; Sadigov, A.; Sadygov, Z.; Jafarova, E.; Ahmadov, G.; Sadygov, Z.; Olshevski, A.; Zerrouk, F.; Mukhtarov, R.

    2015-01-01

    Being capable measuring small lights gives possibility to use micro-pixel avalanche photodiodes with scintillators. It is shown two prototypes to use micro-pixel avalanche photodiodes with and without scintillators as alpha and gamma counters in this paper. First prototype is to use two micro-pixel avalanche photodiodes. One for detecting alpha particles and closer to it, the second one with a thin plastic scintillator for detecting gamma rays. Second prototype is called two-layers configuration in which it is used only one micro-pixel avalanche photodiode, but two scntillators with different decay times. One can distinquish alpha particle and gamma ray events by using pulse shape discrimination techniques in the two-layer configuration. In this work an alpha particle and gamma ray counting performance of micro-pixel avalanche photodiodes without scintillators and its combination of plastic and BGO+ plastic scintillators was investigated. Obtained results showed the detection performance of the micro-pixel avalanche photodiodes in combination with plastic scintillator was about the same as conventional semiconductor detectors

  20. HgCdTe APDS for space applications

    Science.gov (United States)

    Rothman, Johan; de Broniol, Eric; Foubert, Kevin; Mollard, Laurent; Péré-Laperne, Nicolas; Salvetti, Frederic; Kerlain, Alexandre; Reibel, Yann

    2017-11-01

    HgCdTe avalanche photodiode focal plane arrays (FPAs) and single element detectors have been developed for a large scope of photon starved applications. The present communication present the characteristics of our most recent detector developments that opens the horizon for low infrared (IR) photon number detection with high information conservation for imaging, atmospheric lidar and free space telecommunications. In particular, we report on the performance of TEC cooled large area detectors with sensitive diameters ranging from 30- 200 μm, characterised by detector gains of 2- 20 V/μW and noise equivalent input power of 0.1-1 nW for bandwidths ranging from 20 to 400 MHz.

  1. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Britvitch, I. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland)]. E-mail: Ilia.britvitch@psi.ch; Johnson, I. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Renker, D. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stoykov, A. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Lorenz, E. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland); Max Planck Institute for Physics, 80805 Munich (Germany)

    2007-02-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

  2. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    International Nuclear Information System (INIS)

    Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

    2007-01-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate

  3. Readout of scintillator light with avalanche photodiodes for positron emission tomography

    International Nuclear Information System (INIS)

    Chen, Ruru; Fremout, A.; Tavernier, S.; Bruyndonckx, P.; Clement, D.; Loude, J.-F.; Morel, C.

    1999-01-01

    The noise properties and other relevant characteristics of avalanche photodiodes have been investigated with the perspective of replacing photomultiplier tubes in positron emission tomography. It is clearly demonstrated that they are a valid alternative to photomultiplier tubes in this application

  4. Radiation damage effect on avalanche photodiodes

    CERN Document Server

    Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

    1999-01-01

    Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

  5. Setting best practice criteria for self-differencing avalanche photodiodes in quantum key distribution

    Science.gov (United States)

    Koehler-Sidki, Alexander; Dynes, James F.; Lucamarini, Marco; Roberts, George L.; Sharpe, Andrew W.; Savory, Seb J.; Yuan, Zhiliang; Shields, Andrew J.

    2017-10-01

    In recent years, the security of avalanche photodiodes as single photon detectors for quantum key distribution has been subjected to much scrutiny. The most prominent example of this surrounds the vulnerability of such devices to blinding under strong illumination. We focus on self-differencing avalanche photodiodes, single photon detectors that have demonstrated count rates exceeding 1 GCounts/s resulting in secure key rates over 1 MBit/s. These detectors use a passive electronic circuit to cancel any periodic signals thereby enhancing detection sensitivity. However this intrinsic feature can be exploited by adversaries to gain control of the devices using illumination of a moderate intensity. Through careful experimental examinations, we define here a set of criteria for these detectors to avoid such attacks.

  6. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

    International Nuclear Information System (INIS)

    Wang, Ling; Bao, Xichang; Zhang, Wenjing; Li, Chao; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

    2009-01-01

    Dark current is critical for GaN-based avalanche photodiodes because it significantly increases the noise current and limits the multiplication factor. It has been found that the band-to-band tunneling current is the dominant origin of the dark current for avalanche photodiodes at the onset of breakdown voltage. Experimentally, for GaN-based avalanche photodiodes with a thinner intrinsic layer, the dark current increases nearly exponentially with the applied voltage even at a lower bias voltage. In this paper, the intrinsic layer (i-layer) width of GaN-based avalanche photodiodes has been varied to study its effect on the band-to-band tunneling current. A widely used equation was used to calculate the band-to-band tunneling current of avalanche photodiodes with different i-layer widths (i-layer 0.1 µm, 0.2 µm and 0.4 µm). At −40 V, the band-to-band tunneling current significantly reduces by a magnitude of 10 −15 A with an increase in the i-layer width from 0.1 µm to 0.2 µm, and a magnitude of 10 −29 A with an increase in the i-layer width from 0.2 µm to 0.4 µm. Then, GaN-based avalanche photodiodes (i-layer 0.1 µm, 0.2 µm and 0.4 µm) with different-sized mesa were fabricated. Also, the measurement of dark current of all three different structures was performed, and their multiplication factors were given

  7. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  8. An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

    International Nuclear Information System (INIS)

    Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

    2017-01-01

    To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

  9. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  10. X-ray spectrometry with Peltier-cooled large area avalanche photodiodes

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Lopes, J.A.M.; Santos, J.M.F. dos; Conde, C.A.N.

    2004-01-01

    Performance characteristics of the response of a Peltier-cooled large-area avalanche photodiode are investigated. Detector gain, energy linearity, energy resolution and minimum detectable energy are studied at different operation temperatures. Detector energy resolution and lowest detectable X-ray energy present a strong improvement as the operation temperature is reduced from 25 to 15 deg. C and slower improvements are achieved for temperatures below 10 deg. C

  11. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

    1994-01-01

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  12. Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

    Science.gov (United States)

    Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

    2018-04-01

    The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

  13. Performances of a HGCDTE APD Based Detector with Electric Cooling for 2-μm DIAL/IPDA Applications

    Directory of Open Access Journals (Sweden)

    Dumas A.

    2016-01-01

    Full Text Available In this work we report on design and testing of an HgCdTe Avalanche Photodiode (APD detector assembly for lidar applications in the Short Wavelength Infrared Region (SWIR : 1,5 - 2 μm. This detector consists in a set of diodes set in parallel -making a 200 μm large sensitive area- and connected to a custom high gain TransImpedance Amplifier (TIA. A commercial four stages Peltier cooler is used to reach an operating temperature of 185K. Crucial performances for lidar use are investigated : linearity, dynamic range, spatial homogeneity, noise and resistance to intense illumination.

  14. A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

    International Nuclear Information System (INIS)

    Vanyushin, I. V.; Gergel, V. A.; Gontar', V. M.; Zimoglyad, V. A.; Tishin, Yu. I.; Kholodnov, V. A.; Shcheleva, I. M.

    2007-01-01

    A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-μm silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength λ = 0.56 μm in the irradiance range of 10 -3 -10 2 lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high

  15. High speed, wide dynamic range analog signal processing for avalanche photodiode

    CERN Document Server

    Walder, J P; Pangaud, P

    2000-01-01

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented.

  16. High speed, wide dynamic range analog signal processing for avalanche photodiode

    International Nuclear Information System (INIS)

    Walder, J.P.; El Mamouni, Houmani; Pangaud, Patrick

    2000-01-01

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented

  17. High speed, wide dynamic range analog signal processing for avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Walder, J.P. E-mail: walder@in2p3.fr; El Mamouni, Houmani; Pangaud, Patrick

    2000-03-11

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented.

  18. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  19. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    Science.gov (United States)

    Wegrzecka, Iwona; Wegrzecki, Maciej

    1999-04-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  20. Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.

    2010-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

  1. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

    International Nuclear Information System (INIS)

    Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph

    2007-01-01

    Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p + -n - -n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics

  2. Fifty years of HgCdTe at Texas Instruments and beyond

    Science.gov (United States)

    Kinch, Michael A.

    2009-05-01

    Work on HgCdTe began at Texas Instruments in the early 1960s, and continued through 1997 when TI's defense business was sold first to Raytheon, and subsequently in 1998 to DRS Technologies. This presentation traces the history of HgCdTe's evolution throughout this timeframe to the present day, as viewed through the eyes of the author and several of his TI contemporaries who have survived the experience. The materials technology will be traced from the early days of bulk growth by the solid state recrystalization technique, through the traveling heater method of growth, to liquid phase epitaxy from large Te-rich melts, to vapor phase growth by molecular beam epitaxy and metal organic chemical vapor deposition. The evolution of detector device architectures at TI over the years will be discussed, from the early, successful days of photoconductors and the Common Module System, through the somewhat problematic and relatively unsuccessful foray into charge coupled and charge injection devices for 2nd generation FPAs for the Javelin program, to the outstandingly successful development of the vertically integrated photodiode (VIP) and high density VIP FPA architectures for mono-color and multi-color 3rd generation systems. The versatile, and unique nature of this infrared semiconductor materials system will be highlighted by reference to current work at DRS Technologies into electron avalanche photodiodes (EAPDs), for use in active/passive IR systems, and high operating temperature (HOT) detectors, which threaten to eventually offer BLIP photon detection at uncooled operating temperatures, over the whole IR spectrum from 1 to 12um.

  3. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Verkhovtseva, A. V.; Gergel, V. A.

    2009-01-01

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  4. Scintillation detector composed by new type of avalanche photodiode and CsI(Tl) crystal

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

    1996-01-01

    Using S5345 type of avalanche photodiode produced by Hamamatsu for the CsI(Tl) crystal readout, the spectrum of γ ray were measured. Energy resolution of 6.8% for 1.27 MeV γ ray from 22 Na source was obtained. The relation between energy resolution and coupling area, dimension of crystal, shaping time and bias were measured

  5. Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Antognini, A.; Boucher, M.; Conde, C.A.N.; Huot, O.; Knowles, P.; Kottmann, F.; Ludhova, L.; Mulhauser, F.; Pohl, R.; Schaller, L.A.; Santos, J.M.F. dos; Taqqu, D.; Veloso, J.F.C.A.

    2003-01-01

    The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

  6. Studies of avalanche photodiodes for scintillating fibre tracking readout

    International Nuclear Information System (INIS)

    Fenker, H.; Thomas, J.

    1993-01-01

    Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

  7. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  8. Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

    Science.gov (United States)

    Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej

    2001-08-01

    New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

  9. Novel micropixel avalanche photodiodes (MAPD) with super high pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.; Gavrishchuk, O.; Guskov, A.; Khovanskiy, N.; Krumshtein, Z.; Leitner, R.; Meshcheryakov, G.; Nagaytsev, A.; Olchevski, A.; Rezinko, T.; Sadovskiy, A.; Sadygov, Z.; Savin, I.; Tchalyshev, V.; Tyapkin, I.; Yarygin, G.; Zerrouk, F.

    2011-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g. some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPD) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by the Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET.

  10. Avalanche photodiode based time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Ogasawara, Keiichi, E-mail: kogasawara@swri.edu; Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C. [Southwest Research Institute, 6220 Culebra Road, San Antonio, Texas 78238 (United States)

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  11. Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry

    International Nuclear Information System (INIS)

    Hobbs, M J; Tan, C H; Willmott, J R

    2013-01-01

    We report the evaluation of Si avalanche photodiodes (APDs) for use in radiation thermometry as an alternative to Si photodiodes. We compared their performance when operated under phase sensitive detection (PSD), where the signal is modulated, and direct detection (DD) methods. A Si APD was compared with a Si photodiode with reference black body temperatures of 275 to 600°C, in terms of the mean output voltage and signal-to-noise ratio (SNR), measured at different APD gain values. We found that using both PSD and DD methods, the high internal gain of the Si APD achieved a lower minimum detection temperature in order to satisfy a specific minimum output voltage of the detector-preamplifier combination employed. The use of PSD over DD for the Si APD allowed for improved performance of the thermometer, with a lower minimum measurable temperature, as well as improvement in the SNR. For instance we found that at 350°C, the Si APD biased at 150 V using PSD can provide ∼ 88 times enhancement in the system SNR over that of a Si photodiode using DD. A corresponding temperature error of ±0.05°C was achieved using the APD with PSD compared to an error of ±2.75°C measured using the Si photodiode with DD.

  12. Study on the property of the avalanche photodiode as the readout component for scintillation crystals

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Zhu Guoyi; Mao Yufang; Dong Xiaoli; Li Zuhao

    1996-01-01

    The new avalanche photodiode (APD) and a CsI(Tl) crystal formed a scintillation detector. The energy spectrum of γ rays was measured by this detector. The measured results were compared with that measured by photomultiplier. Our plan is to use APD as PbWO 4 readout component for forward luminosity electromagnetic calorimeter at τ-C factory

  13. Response of CMS avalanche photo-diodes to low energy neutrons

    Science.gov (United States)

    Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

    2012-12-01

    The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

  14. A new method to improve multiplication factor in micro-pixel avalanche photodiodes with high pixel density

    Energy Technology Data Exchange (ETDEWEB)

    Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Ahmadov, F. [National Nuclear Research Center, Baku (Azerbaijan); Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Madatov, R.; Mehdiyeva, R. [Institute of Radiation Problems, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada)

    2016-07-11

    Presented is a new model describing development of the avalanche process in time, taking into account the dynamics of electric field within the depleted region of the diode and the effect of parasitic capacitance shunting individual quenching micro-resistors on device parameters. Simulations show that the effective capacitance of a single pixel, which defines the multiplication factor, is the sum of the pixel capacitance and a parasitic capacitance shunting its quenching micro-resistor. Conclusions obtained as a result of modeling open possibilities of improving the pixel gain in micropixel avalanche photodiodes with high pixel density (or low pixel capacitance).

  15. Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

  16. The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

    International Nuclear Information System (INIS)

    Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

    2013-01-01

    In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined. (letter)

  17. State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

    Science.gov (United States)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

  18. Geiger mode avalanche photodiodes for microarray systems

    Science.gov (United States)

    Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

    2002-06-01

    New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

  19. Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

    Science.gov (United States)

    Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

    2018-02-01

    Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

  20. An excess noise measurement system for weak responsivity avalanche photodiodes

    Science.gov (United States)

    Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.

    2018-06-01

    A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.

  1. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  2. Studies of the LHC detection systems: scintillating fibers projective electromagnetic calorimeter prototype and light reading by avalanche photodiodes

    International Nuclear Information System (INIS)

    Bouhemaid, N.

    1995-01-01

    In this thesis a study concerning the hardware detection system of ATLAS experiment in preparation for L.H.C. is presented. The study is divided in two parts. After a general introduction of the L.H.C. and the ATLAS detector, the first part concerning the electromagnetic calorimeter, and the second part concerning the readout with avalanche photodiodes, are discussed. For both subjects the basic principles are presented before various test results are described. Within the RD1 program three different electromagnetic calorimeter prototypes, which all use the lead scintillating fibres technique, have been built. The first is a non-projective, compensating calorimeter called ''500μm'', the second is a pseudo projective, non-compensating, called ''1 mm'', and the third is fully projective, called ''Radial''. The last prototype is discussed in more detail. Avalanches photodiodes which are used as readout of the ''1 mm'' calorimeter, have been exposed to both, a dedicated test bench in the laboratory as well as to test beams. The results of these tests are also presented. (author). 35 refs., 96 figs., 30 tabs

  3. X-ray fluorescence hologram data collection with a cooled avalanche photodiode

    CERN Document Server

    Hayashi, K; Matsubara, E I; Kishimoto, S; Mori, T; Tanaka, M

    2002-01-01

    A high counting rate X-ray detector with an appropriate energy resolution is desired for high quality X-ray fluorescence hologram measurements because a holographic pattern is detected as extremely small intensity variations of X-ray fluorescence on a large intensity background. A cooled avalanche photodiode (APD), which has about 10% energy resolution and is designed for a high counting rate, fits the above requirements. Reconstructed atomic images from experimental holograms using the APD system provide us a clear view of the first and second neighbor atoms around an emitter. The present result proved that a combination of this APD system and a synchrotron X-ray source enables us to measure a high quality hologram for a reasonable measurement time.

  4. Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

    International Nuclear Information System (INIS)

    Reboli, A.

    2005-10-01

    Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232 Th and 4.2% (240 keV FWHM) for 236 Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

  5. Best-Practice Criteria for Practical Security of Self-Differencing Avalanche Photodiode Detectors in Quantum Key Distribution

    Science.gov (United States)

    Koehler-Sidki, A.; Dynes, J. F.; Lucamarini, M.; Roberts, G. L.; Sharpe, A. W.; Yuan, Z. L.; Shields, A. J.

    2018-04-01

    Fast-gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high-bit-rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system, or even an entire QKD network. We investigate the behavior of a gigahertz-gated, self-differencing (In,Ga)As APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modeling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche probability and/or strengthening the capacitive response. Based on this finding, we propose a set of best-practice criteria for designing and operating fast-gated APD detectors to ensure their practical security in QKD.

  6. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  7. 25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching.

    Science.gov (United States)

    Nada, Masahiro; Nakamura, Makoto; Matsuzaki, Hideaki

    2014-01-13

    25-Gbit/s error-free operation of an optical receiver is successfully demonstrated against burst-mode optical input signals without preambles. The receiver, with a high-sensitivity avalanche photodiode and burst-mode transimpedance amplifier, exhibits sufficient receiver sensitivity and an extremely quick response suitable for burst-mode operation in 100-Gbit/s optical packet switching.

  8. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  9. Measurement-based characterization of multipixel avalanche photodiodes for scintillating detectors

    CERN Document Server

    Dziewiecki, M

    2012-01-01

    Multipixel avalanche photodiodes (MAPD) are recently gaining popularity in high energy physics experiments as an attractive replacement for photomultiplier tubes, which have been extensively used for many years as a part of various scintillating detectors. Their low price, small dimensions and another features facilitating their use (like mechanical shock resistance, magnetic field immunity or moderate supply voltage) make the MAPDs a good choice for commercial use as well, what is reflected in growing number of producers as well as MAPD models available on the market. This dissertation presents Author’s experience with MAPD measurements and modelling, gained during his work on the T2K (Tokai-to-Kamioka) long-baseline neutrino experiment, carried out by an international collaboration in Japan. First, operation principle of the MAPD, definitions of various parameters and measurement methods are discussed. Then, a device for large-scale MAPD measurements and related data processing methods are described. Fina...

  10. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

    International Nuclear Information System (INIS)

    Green, James E; David, John P R; Tozer, Richard C

    2012-01-01

    This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately. (paper)

  11. Application of avalanche photodiode for soft X-ray pulse-height analyses in the Ht-7 tokamak

    CERN Document Server

    Shi Yue Jiang; Hu Li Qun; Sun Yan Jun; LiuSheng; Ling Bil

    2002-01-01

    An avalanche photodiode (APD) has been used as soft X-ray energy pulse-height analysis system for the measurement of the electron temperature on the HT-7 tokamak. The experimental results obtained with the APD with its inferior energy resolution show a little difference compared to the conventional high energy-resolution Si (Li) detector. Both numerical analysis and experimental results prove that the APD is good enough for application of the electron temperature measurement in tokamaks.

  12. Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

    2015-01-01

    Roč. 787, JUL (2015), s. 117-120 ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.200, year: 2015

  13. Studies of the LHC detection systems: scintillating fibers projective electromagnetic calorimeter prototype and light reading by avalanche photodiodes; Etudes de systemes de detection pour LHC: prototype d`un calorimetre electromagnetique projectif a fibres scintillantes et lecture de la lumiere par des photodiodes a avalanches

    Energy Technology Data Exchange (ETDEWEB)

    Bouhemaid, N

    1995-09-22

    In this thesis a study concerning the hardware detection system of ATLAS experiment in preparation for L.H.C. is presented. The study is divided in two parts. After a general introduction of the L.H.C. and the ATLAS detector, the first part concerning the electromagnetic calorimeter, and the second part concerning the readout with avalanche photodiodes, are discussed. For both subjects the basic principles are presented before various test results are described. Within the RD1 program three different electromagnetic calorimeter prototypes, which all use the lead scintillating fibres technique, have been built. The first is a non-projective, compensating calorimeter called ``500{mu}m``, the second is a pseudo projective, non-compensating, called ``1 mm``, and the third is fully projective, called ``Radial``. The last prototype is discussed in more detail. Avalanches photodiodes which are used as readout of the ``1 mm`` calorimeter, have been exposed to both, a dedicated test bench in the laboratory as well as to test beams. The results of these tests are also presented. (author). 35 refs., 96 figs., 30 tabs.

  14. Readout of plastic scintillators with cooled large-area avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Mykulyak, A.; Kapusta, M.; Lynen, U.; Moszynski, M.; Mueller, W.F.J.; Orth, H.; Schwarz, C.; Szawlowski, M.; Trautmann, W.; Trzcinski, A.; Wolski, D.; Zwieglinski, B. E-mail: bzw@fuw.edu.pl

    2004-05-11

    Time-of-flight measurements in multifragmentation of heavy, relativistic projectiles require very good time resolution and at the same time the detecting system must cope with a dynamic range of up to 8000:1. We look into the possibility of application of large-area avalanche photodiodes (LAAPDs) as alternative light sensors to meet the above requirements. The paper presents the results of our amplitude and time response studies of a plastic scintillator BC-408 readout with a phi16 mm LAAPD using radioactive sources. The measurements were performed using two different setups. The best time resolution has been obtained by exploiting LAAPD cooling to increase its gain beyond that accessible at room temperature. We reach 610 ps (FWHM) at -26 deg. C for the corresponding LAAPD gain of {approx}900 and the {sup 90}Sr/{sup 90}Y {beta}-ray source. We hope to reach below the desired 400 ps with the latter setup at the higher light levels available with multifragmentation products.

  15. Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure

    Science.gov (United States)

    Abe, Tomoki; Uchida, Shigeto; Tanaka, Keita; Fujisawa, Takanobu; Kasada, Hirofumi; Ando, Koshi; Akaiwa, Kazuaki; Ichino, Kunio

    2018-05-01

    We investigated device degradation in PEDOT:PSS/ZnSSe organic-inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (˜ 30 V) in the N2 (4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2 atmosphere and could be controlled by vacuum packaging.

  16. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  17. Laser annealing heals radiation damage in avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

    2017-12-15

    Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

  18. Origin of large dark current increase in InGaAs/InP avalanche photodiode

    Science.gov (United States)

    Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

    2018-04-01

    The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

  19. Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

    International Nuclear Information System (INIS)

    Li Yang; Liao Sheng-Kai; Liang Fu-Tian; Shen Qi; Liang Hao; Peng Cheng-Zhi

    2016-01-01

    Quantum random number generators adopting single photon detection have been restricted due to the non-negligible dead time of avalanche photodiodes (APDs). We propose a new approach based on an APD array to improve the generation rate of random numbers significantly. This method compares the detectors' responses to consecutive optical pulses and generates the random sequence. We implement a demonstration experiment to show its simplicity, compactness and scalability. The generated numbers are proved to be unbiased, post-processing free, ready to use, and their randomness is verified by using the national institute of standard technology statistical test suite. The random bit generation efficiency is as high as 32.8% and the potential generation rate adopting the 32 × 32 APD array is up to tens of Gbits/s. (paper)

  20. Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

    2012-05-15

    A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

  1. Large area avalanche photodiodes in scintillation and X-rays detection

    CERN Document Server

    Moszynski, M; Kapusta, M; Balcerzyk, M

    2002-01-01

    The presented paper summarizes our earlier studies on application of beveled-edge Large Area Avalanche Photodiodes (LAAPDs) in gamma-rays scintillation detection. LAAPDs, due to their high quantum efficiency and low excess noise factor allow for better statistical accuracy of the signal as compared to photomultipliers. The device dark noise contribution significantly affects energy resolution only for gamma-rays with energy below 50 keV. Notably better or comparable energy resolutions to those observed with a XP2020Q photomultiplier were obtained with the LAAPDs for a number of different scintillators. Particularly, the recorded energy resolutions of 4.3+-0.2% and 4.8+-0.14% measured with YAP and CsI(Tl) crystals, respectively, for the 662 keV gamma-peak from a sup 1 sup 3 sup 7 Cs source belong to the best observed ever with these scintillation detectors. Results of the study of timing with fast scintillators coupled to the LAAPD showed subnanosecond time resolution of 570+-30 ps for sup 6 sup 0 Co gamma-ray...

  2. Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

    CERN Document Server

    Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

    1999-01-01

    An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

  3. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  4. A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

    Science.gov (United States)

    Beck, Jeff; Welch, Terry; Mitra, Pradip; Reiff, Kirk; Sun, Xiaoli; Abshire, James

    2014-01-01

    An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

  5. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    Science.gov (United States)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  6. Evaluation of a fast single-photon avalanche photodiode for measurement of early transmitted photons through diffusive media.

    Science.gov (United States)

    Mu, Ying; Valim, Niksa; Niedre, Mark

    2013-06-15

    We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.

  7. A novel camera type for very high energy gamma-ray astronomy based on Geiger-mode avalanche photodiodes

    International Nuclear Information System (INIS)

    Anderhub, H; Biland, A; Boller, A; Braun, I; Commichau, S; Commichau, V; Dorner, D; Gendotti, A; Grimm, O; Gunten, H von; Hildebrand, D; Horisberger, U; Kraehenbuehl, T; Kranich, D; Lorenz, E; Lustermann, W; Backes, M; Neise, D; Bretz, T; Mannheim, K

    2009-01-01

    Geiger-mode avalanche photodiodes (G-APD) are promising new sensors for light detection in atmospheric Cherenkov telescopes. In this paper, the design and commissioning of a 36-pixel G-APD prototype camera is presented. The data acquisition is based on the Domino Ring Sampling (DRS2) chip. A sub-nanosecond time resolution has been achieved. Cosmic-ray induced air showers have been recorded using an imaging mirror setup, in a self-triggered mode. This is the first time that such measurements have been carried out with a complete G-APD camera.

  8. CMOS integrated avalanche photodiodes and frequency-mixing optical sensor front end for portable NIR spectroscopy instruments.

    Science.gov (United States)

    Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M

    2011-01-01

    This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.

  9. Large area avalanche photodiodes in scintillation and X-rays detection

    International Nuclear Information System (INIS)

    Moszynski, M.; Szawlowski, M.; Kapusta, M.; Balcerzyk, M.

    2002-01-01

    The presented paper summarizes our earlier studies on application of beveled-edge Large Area Avalanche Photodiodes (LAAPDs) in γ-rays scintillation detection. LAAPDs, due to their high quantum efficiency and low excess noise factor allow for better statistical accuracy of the signal as compared to photomultipliers. The device dark noise contribution significantly affects energy resolution only for γ-rays with energy below 50 keV. Notably better or comparable energy resolutions to those observed with a XP2020Q photomultiplier were obtained with the LAAPDs for a number of different scintillators. Particularly, the recorded energy resolutions of 4.3±0.2% and 4.8±0.14% measured with YAP and CsI(Tl) crystals, respectively, for the 662 keV γ-peak from a 137 Cs source belong to the best observed ever with these scintillation detectors. Results of the study of timing with fast scintillators coupled to the LAAPD showed subnanosecond time resolution of 570±30 ps for 60 Co γ-rays detected in LSO crystal. The response of LAAPD to X-rays and factors limiting energy resolution have been discussed too

  10. Progress in the use of avalanche photodiodes for readout for calorimeters

    International Nuclear Information System (INIS)

    Fenker, H.; Morgan, K.; Regan, T.

    1991-09-01

    During the past year the Superconducting Super Collider Tracking Group has progressed from acquisition of its first avalanche photodiode (APD) to installation of a 96-channel array of the devices. The work was motivated by the desire to learn how to use APDs as the sensitive elements in a fiber tracking detector, moderated by the presence of limited resources and the absence of activity within groups outside the SSC Laboratory on such a project. We chose, therefore, to team up with an ongoing research effort which intended to evaluate both pre-shower and shower-maximum detectors and various means of sensing the light produced. The pre-shower detector is made of layers of scintillating fibers similar to a fiber tracker. The shower-maximum detector uses optical fibers to transmit the light from scintillating plates to the readout devices. Our contribution has been to develop the APD array for use in this test from concept to operation. Currently, the equipment is installed in Fermilab's MP beamline awaiting delivery to the final 36 APDs and exposure to the beam. 9 refs., 18 figs

  11. A silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

    International Nuclear Information System (INIS)

    Hsieh, C.L.; Haskovec, J.; Carlstrom, T.N.; DeBoo, J.C.; Greenfield, C.M.; Snider, R.T.; Trost, P.

    1990-06-01

    A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z eff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis. 4 refs., 5 figs

  12. Application of An Avalanche Photodiode in Synchrotron-Based Ultra-fast X-Radiography

    International Nuclear Information System (INIS)

    Cheong, S.-K.; Liu Jinyuan; Wang Jin; Powell, Christopher F.

    2004-01-01

    A possibility of using avalanche photodiode has been investigated while operated in current or continuous wave mode to accommodate high-intensity synchrotron x-ray beams in an ultra-fast x-radiography. To achieve a time resolution of 1 μs or better in a time-resolved x-radiograhic experiment, the entire time-sequence of the APD response to the pulsed synchrotron x-ray beam is recorded with time resolution of 1-2 ns. We have characterized the APD detector in the continuous wave mode to reveal its linearity, signal to noise ratio, and the time response with various circuit configurations. We have demonstrated that signal-to-noise ratio better than 1000 can be achieved, which is limited only by Poisson statistics. These detectors, coupled with finely focused x-rays, have been used to study structure and dynamics of supersonic fuel sprays with 50 μm-spatial resolution and μs-temporal resolution in the region close to an injection nozzle

  13. HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

    Energy Technology Data Exchange (ETDEWEB)

    Baranec, Christoph; Atkinson, Dani; Hall, Donald; Jacobson, Shane; Chun, Mark [Institute for Astronomy, University of Hawai‘i at Mānoa, Hilo, HI 96720-2700 (United States); Riddle, Reed [Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Law, Nicholas M., E-mail: baranec@hawaii.edu [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255 (United States)

    2015-08-10

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  14. New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region

    Science.gov (United States)

    Capasso, F.; Tsang, W. T.; Williams, G. F.

    1982-12-01

    Recent experimental and theoretical results on a new class of low noise avalanche photo-diodes are reviewed. A large enhancement of the impact ionization rates ratio (a/(3=10) has been demonstrated in AlGaAs/GaAs superlattices and graded band gap detector structures. In addition two novel photodiodes ("staircase" and "channeling" APDs) where only electrons multiply, have been proposed. The staircase APD is the solid state analog of the photo-multiplier with discrete dynodes. It has a low operating voltage (5-20 volts) and a lower excess noise factor, in the ideal case, than that of an ideal conventional APD The channeling APD is instead the solid state analog of a channeltron photomultiplier and has the unique feature of an ultrahigh a/β, ratio (≍∞) compatible with high gain (>100).

  15. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  16. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  17. Investigation of Avalanche Photodiodes and Multipixel Photon Counters as Light Detectors for Cosmic Rays

    Science.gov (United States)

    Vasquez, Jaime; Saavedra, Arthur; Ramos, Roxana; Tavares, Pablo; Wade, Marcus; Fan, Sewan; Haag, Brooke

    2013-04-01

    Through the Research Scholars Institute, students of Hartnell Community College experimented with the application of avalanche photodiodes (APDs) as cosmic ray detectors during the summer of 2012. An APD detector was coupled with a 10 meter long wavelength shifting fiber (WSF) wrapped around a cylindrical plastic scintillator to maximize signal detection. A photomultiplier tube (PMT) was used in conjunction to detect the same scintillation light caused by incoming cosmic rays. Two APD detectors were evaluated to confirm the viability of the setup. In addition, a similar setup was recently utilized to implement multi-pixel photon counters (MPPCs) as readout detectors. Under this configuration, a high gain preamplifier was used to amplify the signals for both the MPPC and APD detectors. We report on our results characterizing the MPPC and discuss its overall performance. Compared to the APD, our findings suggest that the MPPC detector has greater sensitivity in detecting weak light signals, and can be used in place of the PMT for certain counting applications.

  18. Optimization of eyesafe avalanche photodiode lidar for automobile safety and autonomous navigation systems

    Science.gov (United States)

    Williams, George M.

    2017-03-01

    Newly emerging accident-reducing, driver-assistance, and autonomous-navigation technology for automobiles is based on real-time three-dimensional mapping and object detection, tracking, and classification using lidar sensors. Yet, the lack of lidar sensors suitable for meeting application requirements appreciably limits practical widespread use of lidar in trucking, public livery, consumer cars, and fleet automobiles. To address this need, a system-engineering perspective to eyesafe lidar-system design for high-level advanced driver-assistance sensor systems and a design trade study including 1.5-μm spot-scanned, line-scanned, and flash-lidar systems are presented. A cost-effective lidar instrument design is then proposed based on high-repetition-rate diode-pumped solid-state lasers and high-gain, low-excess-noise InGaAs avalanche photodiode receivers and focal plane arrays. Using probabilistic receiver-operating-characteristic analysis, derived from measured component performance, a compact lidar system is proposed that is capable of 220 m ranging with 5-cm accuracy, which can be readily scaled to a 360-deg field of regard.

  19. Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

    Science.gov (United States)

    Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

    2015-05-01

    Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

  20. Substitution of photomultiplier tubes by photodiodes

    International Nuclear Information System (INIS)

    Teixeira, D.L.

    1990-04-01

    The application of Si semiconductors, either of the conventional or the avalanche type, as light amplifiers in radiation detection, has been studied aiming the substitution of photomultiplier (PM) tubes by photodiodes. The objective of this work is to compare the response of photodiodes and PM tubes when coupled to scintillation crystals. A Hamamatsu Si photodiode, model S 1337-66 B Q, was coupled to a Harshaw NaI (TI) scintillation crystal of window diameter equal to 25,4 mm. Its performance was evaluated by specially designed associated electronics, compatible with the photodiode characteristics. X-ray beams from 30 to 111 KeV were used to determine the response and the repeatability of the scintillator-photodiode and the scintillator-PM tube systems. The repeatability was found to be within 0,27% for the photodiode and 0,57% for the PM tube. This work confirmed that photodiodes can be used as light amplifiers, provided their characteristics, such as light spectrum response, are considered. It also shows that further studies are necessary in order to identify the applications in radiation detection where PM tubes might be replaced by photodiodes. (author)

  1. Hole-Initiated-Avalanche, Linear-Mode, Single-Photon-Sensitive Avalanche Photodetector with Reduced Excess Noise and Low Dark Count Rate, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A radiation hard, single photon sensitive InGaAs avalanche photodiode (APD) receiver technology will be demonstrated useful for long range space based optical...

  2. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    Science.gov (United States)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  3. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    He, Kai; Wang, Xi; Zhang, Peng; Chen, Yi-Yu [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, Song-Min; Xie, Xiao-Hui; Lin, Chun, E-mail: chun-lin@mail.sitp.ac.cn; Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao, E-mail: qinyao@mail.sitp.ac.cn [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Li, Yang [Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-05-28

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V{sub FB}=−5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R{sub 0}A product and corresponding dark current calculated from the proposed model as functions of the gate voltage V{sub g} demonstrate good consistency with the measured values. The R{sub 0}A product remarkably degenerates when V{sub g} is far below or above V{sub FB} because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7×10{sup 7} Ω · cm{sup 2} around the transition between surface depletion and weak inversion when V{sub g}≈−4 V, which might result from reduced generation-recombination current.

  4. Characterization of new hexagonal large area Geiger Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Boccone, V.; Aguilar, J.A.; Della Volpe, D.; Christov, A.; Montaruli, T.; Rameez, M.; Basili, A.

    2013-06-01

    Photomultipliers (PMTs) are the standard detector for construction of the current generation of imaging Atmospheric Cherenkov Telescopes (IACTs). Despite impressive improvements in QE and reliability in the last years, these devices suffer from the limitation of being unable to operate in the partially illuminated sky (during full or partial moon periods) as the excess light leads to a significant increase in the rate of ageing of the devices themselves and consequently limit the life of the camera. A viable alternative is the large area Geiger-mode avalanche photodiodes (G-APDs also known as Silicon Photomultipliers or SiPMs) that are commercially available from different producers in various types and dimensions. The sufficiency of the maturity of this technology for application to Cherenkov Astronomy has already been demonstrated by the FACT telescope. One of the camera designs under study for the 4 m Davies Cotton Telescope foresees the utilization of a large area G-APDs coupled to non imaging light concentrators. In collaboration with Hamamatsu and deriving from their current technology, we have designed a new hexagonal shaped large area G-APD HEX S12516 which when coupled to a Winston cone of 24 degrees cutting angle allows for a pixel angular resolution of 0.25 degrees for a f/D 1.4 telescope with a diameter of 4 m. The device, available in 2 different cell size configurations (50 μm and 100 μm), is divided into 4 different channels powered in common cathode mode. A temperature sensor was included for a better temperature evaluation in the characterization phase. The first 3 prototypes were fully characterized and the results are compared to the larger area devices commercially available such as the S10985-050C (2x2 array of 3x3 mm 2 G-APDs). The photo-detection efficiency is measured applying the Poisson statistics method using pulsed LED at 7 different wavelengths from 355 to 670 nm and for different bias over-voltages (V ov ). Optical crosstalk and

  5. Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

    Science.gov (United States)

    Shanley, J. F.; Flanagan, C. T.

    1980-01-01

    The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

  6. Scintillator counters with multi-pixel avalanche photodiode readout for the ND280 detector of the T2K experiment

    International Nuclear Information System (INIS)

    Mineev, O.; Afanasjev, A.; Bondarenko, G.; Golovin, V.; Gushchin, E.; Izmailov, A.; Khabibullin, M.; Khotjantsev, A.; Kudenko, Yu.; Kurimoto, Y.; Kutter, T.; Lubsandorzhiev, B.; Mayatski, V.; Musienko, Yu.; Nakaya, T.; Nobuhara, T.; Shaibonov, B.A.J.; Shaikhiev, A.; Taguchi, M.; Yershov, N.; Yokoyama, M.

    2007-01-01

    The Tokai-to-Kamioka (T2K) experiment is a second generation long baseline neutrino oscillation experiment which aims at a sensitive search for ν e appearance. The main design features of the T2K near neutrino detectors located at 280m from the target are presented, and the scintillator counters are described. The counters are readout via WLS fibers embedded into S-shaped grooves in the scintillator from both ends by multi-pixel avalanche photodiodes operating in a limited Geiger mode. Operating principles and results of tests of photosensors with a sensitive area of 1mm 2 are presented. A time resolution of 1.75ns, a spatial resolution of 9.9-12.4cm, and a detection efficiency for minimum ionizing particles of more than 99% were obtained for scintillator detectors in a beam test

  7. Characterization and quality control of avalanche photodiode arrays for the Clear-PEM detector modules

    International Nuclear Information System (INIS)

    Abreu, Conceicao; Amaral, Pedro; Carrico, Bruno; Ferreira, Miguel; Luyten, Joan; Moura, Rui; Ortigao, Catarina; Rato, Pedro; Varela, Joao

    2007-01-01

    Clear-PEM is a Positron Emission Mammography (PEM) prototype being developed in the framework of the Crystal Clear Collaboration at CERN. This device is a dedicated PET camera for mammography, based on LYSO:Ce scintillator crystals, Avalanche PhotoDiodes (APD) and a fast, low-noise electronics readout system, designed to examine both the breast and the axillary lymph node areas, and aiming at the detection of tumors down to 2 mm in diameter. The prototype has two planar detector heads, each composed of 96 detector modules. The Clear-PEM detector module is composed of a matrix of 32 identical 2x2x20 mm 3 LYSO:Ce crystals read at both ends by Hamamatsu S8550 APD arrays (4x8) for Depth-of-Interaction (DoI) capability. The APD arrays were characterized by the measurement of gain and dark current as a function of bias voltage, under controlled temperature conditions. Two independent setups were used. The full set of 398 APD arrays followed a well-defined quality control (QC) protocol, aiming at the rejection of arrays not complying within defined specifications. From a total of 398 arrays, only 2 (0.5%) were rejected, reassuring the trust in these detectors for prototype assembly and future developments

  8. Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

    International Nuclear Information System (INIS)

    Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

    2008-01-01

    In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

  9. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  10. Pulse oximeter using a gain-modulated avalanche photodiode operated in a pseudo lock-in light detection mode

    Science.gov (United States)

    Miyata, Tsuyoshi; Iwata, Tetsuo; Araki, Tsutomu

    2006-01-01

    We propose a reflection-type pulse oximeter, which employs two pairs of a light-emitting diode (LED) and a gated avalanche photodiode (APD). One LED is a red one with an emission wavelength λ = 635 nm and the other is a near-infrared one with that λ = 945 nm, which are both driven with a pulse mode at a frequency f (=10 kHz). Superposition of a transistor-transistor-logic (TTL) gate pulse on a direct-current (dc) bias, which is set so as not exceeding the breakdown voltage of each APD, makes the APD work in a gain-enhanced operation mode. Each APD is gated at a frequency 2f (=20 kHz) and its output signal is fed into a laboratory-made lock-in amplifier that works in synchronous with the pulse modulation signal of each LED at a frequency f (=10 kHz). A combination of the gated APD and the lock-in like signal detection scheme is useful for the reflection-type pulse oximeter thanks to the capability of detecting a weak signal against a large background (BG) light.

  11. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  12. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

    Science.gov (United States)

    Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

    2018-01-01

    We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

  13. An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

    Science.gov (United States)

    Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

    1994-01-01

    Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

  14. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  15. Development of an advanced Two-Micron triple-pulse IPDA lidar for carbon dioxide and water vapor measurements

    Science.gov (United States)

    Petros, Mulugeta; Refaat, Tamer F.; Singh, Upendra N.; Yu, Jirong; Antill, Charles; Remus, Ruben; Taylor, Bryant D.; Wong, Teh-Hwa; Reithmaier, Karl; Lee, Jane; Ismail, Syed; Davis, Kenneth J.

    2018-04-01

    An advanced airborne triple-pulse 2-μm integrated path differential absorption (IPDA) lidar is under development at NASA Langley Research Center that targets both carbon dioxide (CO2) and water vapor (H2O) measurements simultaneously and independently. This lidar is an upgrade to the successfully demonstrated CO2 2-μm double-pulse IPDA. Upgrades include high-energy, highrepetition rate 2-μm triple-pulse laser transmitter, innovative wavelength control and advanced HgCdTe (MCT) electron-initiated avalanche photodiode detection system. Ground testing and airborne validation plans are presented.

  16. Readout electronics for low dark count pixel detectors based on Geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliders

    International Nuclear Information System (INIS)

    Vilella, E.; Arbat, A.; Comerma, A.; Trenado, J.; Alonso, O.; Gascon, D.; Vila, A.; Garrido, L.; Dieguez, A.

    2011-01-01

    High sensitivity and excellent timing accuracy of the Geiger mode avalanche photodiodes make them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase in the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 μm and a high integration 0.13 μm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.

  17. Development of an integrated four-channel fast avalanche-photodiode detector system with nanosecond time resolution

    Science.gov (United States)

    Li, Zhenjie; Li, Qiuju; Chang, Jinfan; Ma, Yichao; Liu, Peng; Wang, Zheng; Hu, Michael Y.; Zhao, Jiyong; Alp, E. E.; Xu, Wei; Tao, Ye; Wu, Chaoqun; Zhou, Yangfan

    2017-10-01

    A four-channel nanosecond time-resolved avalanche-photodiode (APD) detector system is developed at Beijing Synchrotron Radiation. It uses a single module for signal processing and readout. This integrated system provides better reliability and flexibility for custom improvement. The detector system consists of three parts: (i) four APD sensors, (ii) four fast preamplifiers and (iii) a time-digital-converter (TDC) readout electronics. The C30703FH silicon APD chips fabricated by Excelitas are used as the sensors of the detectors. It has an effective light-sensitive area of 10 × 10 mm2 and an absorption layer thickness of 110 μm. A fast preamplifier with a gain of 59 dB and bandwidth of 2 GHz is designed to readout of the weak signal from the C30703FH APD. The TDC is realized by a Spartan-6 field-programmable-gate-array (FPGA) with multiphase method in a resolution of 1ns. The arrival time of all scattering events between two start triggers can be recorded by the TDC. The detector has been used for nuclear resonant scattering study at both Advanced Photon Source and also at Beijing Synchrotron Radiation Facility. For the X-ray energy of 14.4 keV, the time resolution, the full width of half maximum (FWHM) of the detector (APD sensor + fast amplifier) is 0.86 ns, and the whole detector system (APD sensors + fast amplifiers + TDC readout electronics) achieves a time resolution of 1.4 ns.

  18. Investigation of depth-of-interaction by pulse shape discrimination in multicrystal detectors read out by avalanche photodiodes

    International Nuclear Information System (INIS)

    Saoudi, A.; Pepin, C.M.; Dion, F.; Bentourkia, M.; Lecomte, R.; Dautet, H.

    1999-01-01

    The measurement of depth of interaction (DOI) within detectors is necessary to improve resolution uniformity across the FOV of small diameter PET scanners. DOI encoding by pulse shape discrimination (PSD) has definite advantages as it requires only one readout per pixel and it allows DOI measurement of photoelectric and Compton events. The PSD time characteristics of various scintillators were studied with avalanche photodiodes (APD) and the identification capability was tested in multi-crystal assemblies with up to four scintillators. In the PSD time spectrum of an APD-GSO/LSO/BGO/CsI(Tl) assembly, four distinct time peaks at 45, 26, 88 and 150 ns relative to a fast test pulse, having resolution of 10.6, 5.2, 20 and 27 ns, can be easily separated. Whereas the number and position of scintillators in the multi-crystal assemblies affect detector performance, the ability to identify crystals is not compromised. Compton events have a significant effect on PSD accuracy, suggesting that photopeak energy gating should be used for better crystal identification. However, more sophisticated PSD techniques using parametric time-energy histograms can also improve crystal identification in cases where PSD time or energy discrimination alone is inadequate. These results confirm the feasibility of PSD DOI encoding with APD-based detectors for PET

  19. Compact lidar system using laser diode, binary continuous wave power modulation, and an avalanche photodiode-based receiver controlled by a digital signal processor

    Science.gov (United States)

    Ardanuy, Antoni; Comerón, Adolfo

    2018-04-01

    We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.

  20. Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

    Science.gov (United States)

    Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

    2016-01-01

    We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

  1. Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD), Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Leveraging Phase I SBIR successes, in Phase II, a single photon sensitive LIDAR receiver will be fabricated and delivered to NASA. In Phase I, high-gain,...

  2. Angle sensitive single photon avalanche diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Changhyuk, E-mail: cl678@cornell.edu; Johnson, Ben, E-mail: bcj25@cornell.edu; Molnar, Alyosha, E-mail: am699@cornell.edu [Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

    2015-06-08

    An ideal light sensor would provide exact information on intensity, timing, location, and angle of incoming photons. Single photon avalanche diodes (SPADs) provide such desired high (single photon) sensitivity with precise time information and can be implemented at a pixel-scale to form an array to extract spatial information. Furthermore, recent work has demonstrated photodiode-based structures (combined with micro-lenses or diffraction gratings) that are capable of encoding both spatial and angular information of incident light. In this letter, we describe the implementation of such a grating structure on SPADs to realize a pixel-scale angle-sensitive single photon avalanche diode (A-SPAD) built in a standard CMOS process. While the underlying SPAD structure provides high sensitivity, the time information of the two layers of diffraction gratings above offers angle-sensitivity. Such a unique combination of SPAD and diffraction gratings expands the sensing dimensions to pave a path towards lens-less 3-D imaging and light-field time-of-flight imaging.

  3. HgCdTe photovoltaic detectors on Si substrates

    International Nuclear Information System (INIS)

    Zanio, K.R.; Bean, R.C.

    1988-01-01

    HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

  4. A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

    Science.gov (United States)

    Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

    2009-05-01

    Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

  5. Four-layer depth-of-interaction PET detector for high resolution PET using a multi-pixel S8550 avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Nishikido, Fumihiko, E-mail: funis@nirs.go.j [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Inadama, Naoko [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Oda, Ichiro [Shimadzu Corporation, Nishinokyo Kuwabaracho 1 Nakagyo-ku, Kyoto-shi, Kyoto 604-8511 (Japan); Shibuya, Kengo; Yoshida, Eiji; Yamaya, Taiga [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Kitamura, Keishi [Shimadzu Corporation, Nishinokyo Kuwabaracho 1 Nakagyo-ku, Kyoto-shi, Kyoto 604-8511 (Japan); Murayama, Hideo [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan)

    2010-09-21

    Avalanche photodiodes (APDs) are being used as photodetectors in positron emission tomography (PET) because they have many advantages over photomultipliers (PMTs) typically used in PET detectors. We have developed a PET detector that consists of a multi-pixel APD and a 6x6x4 array of 1.46x1.46 mm{sup 2}x4.5 m LYSO crystals for a small animal PET scanner. The detector can identify four-layer depth of interaction (DOI) with a position-sensitive APD coupled to the backside of a crystal array by just an optimized reflector arrangement. Since scintillation lights are shared among many pixels by the method, weaker signals in APD pixels far from the interacting crystals are affected by noise. To evaluate the performance of the four-layer DOI detector with the APD and the influence of electrical noise on our method, we constructed a prototype DOI detector and tested its performance. We found, except for crystal elements on the edge of the crystal array, all crystal elements could be identified from the 2D position histogram. An energy resolution of 16.9% was obtained for the whole crystal array of the APD detector. The results of noise dependence of detector performances indicated that the DOI detector using the APD could achieve sufficient performance even when using application-specific integrated circuits.

  6. Four-layer depth-of-interaction PET detector for high resolution PET using a multi-pixel S8550 avalanche photodiode

    International Nuclear Information System (INIS)

    Nishikido, Fumihiko; Inadama, Naoko; Oda, Ichiro; Shibuya, Kengo; Yoshida, Eiji; Yamaya, Taiga; Kitamura, Keishi; Murayama, Hideo

    2010-01-01

    Avalanche photodiodes (APDs) are being used as photodetectors in positron emission tomography (PET) because they have many advantages over photomultipliers (PMTs) typically used in PET detectors. We have developed a PET detector that consists of a multi-pixel APD and a 6x6x4 array of 1.46x1.46 mm 2 x4.5 m LYSO crystals for a small animal PET scanner. The detector can identify four-layer depth of interaction (DOI) with a position-sensitive APD coupled to the backside of a crystal array by just an optimized reflector arrangement. Since scintillation lights are shared among many pixels by the method, weaker signals in APD pixels far from the interacting crystals are affected by noise. To evaluate the performance of the four-layer DOI detector with the APD and the influence of electrical noise on our method, we constructed a prototype DOI detector and tested its performance. We found, except for crystal elements on the edge of the crystal array, all crystal elements could be identified from the 2D position histogram. An energy resolution of 16.9% was obtained for the whole crystal array of the APD detector. The results of noise dependence of detector performances indicated that the DOI detector using the APD could achieve sufficient performance even when using application-specific integrated circuits.

  7. 2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

    NARCIS (Netherlands)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav; Witzigmann, Bernd; Osiński, Marek; Arakawa, Yasuhiko

    2018-01-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow

  8. Pixel multiplexing technique for real-time three-dimensional-imaging laser detection and ranging system using four linear-mode avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Fan; Wang, Yuanqing, E-mail: yqwang@nju.edu.cn; Li, Fenfang [School of Electronic Science and Engineering, Nanjing University, Nanjing 210046 (China)

    2016-03-15

    The avalanche-photodiode-array (APD-array) laser detection and ranging (LADAR) system has been continually developed owing to its superiority of nonscanning, large field of view, high sensitivity, and high precision. However, how to achieve higher-efficient detection and better integration of the LADAR system for real-time three-dimensional (3D) imaging continues to be a problem. In this study, a novel LADAR system using four linear mode APDs (LmAPDs) is developed for high-efficient detection by adopting a modulation and multiplexing technique. Furthermore, an automatic control system for the array LADAR system is proposed and designed by applying the virtual instrumentation technique. The control system aims to achieve four functions: synchronization of laser emission and rotating platform, multi-channel synchronous data acquisition, real-time Ethernet upper monitoring, and real-time signal processing and 3D visualization. The structure and principle of the complete system are described in the paper. The experimental results demonstrate that the LADAR system is capable of achieving real-time 3D imaging on an omnidirectional rotating platform under the control of the virtual instrumentation system. The automatic imaging LADAR system utilized only 4 LmAPDs to achieve 256-pixel-per-frame detection with by employing 64-bit demodulator. Moreover, the lateral resolution is ∼15 cm and range accuracy is ∼4 cm root-mean-square error at a distance of ∼40 m.

  9. Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

    International Nuclear Information System (INIS)

    Bickman, S.; DeMille, D.

    2005-01-01

    Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/√(Hz), can recover from a large scattered light pulse within 10 μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/√(Hz), also can recover from a large scattered light pulse within 10 μs, and has a bandwidth of 1 MHz

  10. Novel Photon-Counting Detectors for Free-Space Communication

    Science.gov (United States)

    Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

    2016-01-01

    We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

  11. Fast sub-electron detectors review for interferometry

    Science.gov (United States)

    Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe

    2016-08-01

    New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA

  12. Depth of interaction resolution measurements for a high resolution PET detector using position sensitive avalanche photodiodes

    International Nuclear Information System (INIS)

    Yang Yongfeng; Dokhale, Purushottam A; Silverman, Robert W; Shah, Kanai S; McClish, Mickel A; Farrell, Richard; Entine, Gerald; Cherry, Simon R

    2006-01-01

    We explore dual-ended read out of LSO arrays with two position sensitive avalanche photodiodes (PSAPDs) as a high resolution, high efficiency depth-encoding detector for PET applications. Flood histograms, energy resolution and depth of interaction (DOI) resolution were measured for unpolished LSO arrays with individual crystal sizes of 1.0, 1.3 and 1.5 mm, and for a polished LSO array with 1.3 mm pixels. The thickness of the crystal arrays was 20 mm. Good flood histograms were obtained for all four arrays, and crystals in all four arrays can be clearly resolved. Although the amplitude of each PSAPD signal decreases as the interaction depth moves further from the PSAPD, the sum of the two PSAPD signals is essentially constant with irradiation depth for all four arrays. The energy resolutions were similar for all four arrays, ranging from 14.7% to 15.4%. A DOI resolution of 3-4 mm (including the width of the irradiation band which is ∼2 mm) was obtained for all the unpolished arrays. The best DOI resolution was achieved with the unpolished 1 mm array (average 3.5 mm). The DOI resolution for the 1.3 mm and 1.5 mm unpolished arrays was 3.7 and 4.0 mm respectively. For the polished array, the DOI resolution was only 16.5 mm. Summing the DOI profiles across all crystals for the 1 mm array only degraded the DOI resolution from 3.5 mm to 3.9 mm, indicating that it may not be necessary to calibrate the DOI response separately for each crystal within an array. The DOI response of individual crystals in the array confirms this finding. These results provide a detailed characterization of the DOI response of these PSAPD-based PET detectors which will be important in the design and calibration of a PET scanner making use of this detector approach

  13. Recent progress in MBE grown HgCdTe materials and devices at UWA

    Science.gov (United States)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  14. A prototype high-resolution animal positron tomograph with avalanche photodiode arrays and LSO crystals

    International Nuclear Information System (INIS)

    Ziegler, S.I.; Pichler, B.J.; Rafecas, M.; Schwaiger, M.

    2001-01-01

    To fully utilize positron emission tomography (PET) as a non-invasive tool for tissue characterization, dedicated instrumentation is being developed which is specially suited for imaging mice and rats. Semiconductor detectors, such as avalanche photodiodes (APDs), may offer an alternative to photomultiplier tubes for the readout of scintillation crystals. Since the scintillation characteristics of lutetium oxyorthosilicate (LSO) are well matched to APDs, the combination of LSO and APDs seems favourable, and the goal of this study was to build a positron tomograph with LSO-APD modules to prove the feasibility of such an approach. A prototype PET scanner based on APD readout of small, individual LSO crystals was developed for tracer studies in mice and rats. The tomograph consists of two sectors (86 mm distance), each comprising three LSO-APD modules, which can be rotated for the acquisition of complete projections. In each module, small LSO crystals (3.7 x 3.7 x 12 mm 3 ) are individually coupled to one channel within matrices containing 2 x 8 square APDs (2.6 x 2.6 mm 2 sensitive area per channel). The list-mode data are reconstructed with a penalized weighted least squares algorithm which includes the spatially dependent line spread function of the tomograph. Basic performance parameters were measured with phantoms and first experiments with rats and mice were conducted to introduce this methodology for biomedical imaging. The reconstructed field of view covers 68 mm, which is 80% of the total detector diameter. Image resolution was shown to be 2.4 mm within the whole reconstructed field of view. Using a lower energy threshold of 450 keV, the system sensitivity was 350 Hz/MBq for a line source in air in the centre of the field of view. In a water-filled cylinder of 4.6 cm diameter, the scatter fraction at the centre of the field of view was 16% (450 keV threshold). The count rate was linear up to 700 coincidence counts per second. In vivo studies of anaesthetized

  15. The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

    Directory of Open Access Journals (Sweden)

    Moumita Ghosh

    2013-01-01

    Full Text Available The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of p+-p-n-n+ structured Wurtzite-GaN (Wz-GaN reach-through avalanche photodiodes (RAPDs. The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM and Flip Chip (FC are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and 9.4144×103, respectively, due to hole dominated photocurrent (i.e., in FC structure; while those are 480.56 mA W−1 and 7.8800×103, respectively, due to electron dominated photocurrent (i.e., in TM structure at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the n+-layer instead of p+-layer of the device.

  16. Progress on Development of an Airborne Two-Micron IPDA Lidar for Water Vapor and Carbon Dioxide Column Measurements

    Science.gov (United States)

    Singh, Upendra N.; Petros, Mulugeta; Refaat, Tamer F.; Yu, Jirong; Antill, Charles W.; Taylor, Bryant D.; Bowen, Stephen C.; Welters, Angela M.; Remus, Ruben G.; Wong, Teh-Hwa; hide

    2014-01-01

    An airborne 2 micron triple-pulse integrated path differential absorption (IPDA) lidar is currently under development at NASA Langley Research Center (LaRC). This lidar targets both atmospheric carbon dioxide (CO2) and water vapor (H2O) column measurements, simultaneously. Advancements in the development of this IPDA lidar are presented in this paper. Updates on advanced two-micron triple-pulse high-energy laser transmitter will be given including packaging and lidar integration status. In addition, receiver development updates will also be presented. This includes a state-of-the-art detection system integrated at NASA Goddard Space Flight Center. This detection system is based on a newly developed HgCdTe (MCT) electron-initiated avalanche photodiode (e-APD) array. Future plan for IPDA lidar system for ground integration, testing and flight validation will be discussed.

  17. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

  18. Hydrogenated amorphous silicon photoresists for HgCdTe patterning

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, R.E.; DeHart, C.; Wang, L.; Dinan, J.H.; Johnson, J.N.

    1997-07-01

    A process to use a hydrogenated amorphous silicon (a-Si:H) film as a dry photoresist mask for plasma etching of HgCdTe has been demonstrated. The a-Si:H films were deposited using standard plasma enhanced chemical vapor deposition with pure silane as the source gas. X-ray photoelectron spectra show that virtually no oxide grows on the surface of an a-Si:H film after 3 hours in air, indicating that it is hydrogen passivated. Ultraviolet light frees hydrogen from the surface and enhances the oxide growth rate. A pattern of 60 micron square pixels was transferred from a contact mask to the surface of an a-Si:H film by ultraviolet enhanced oxidation in air. For the conditions used, the oxide thickness was 0.5--1.0 nm. Hydrogen plasmas were used to develop this pattern by removing the unexposed regions of the film. A hydrogen plasma etch selectivity between oxide and a-Si:H of greater than 500:1 allows patterns as thick as 700 nm to be generated with this very thin oxide. These patterns were transferred into HgCdTe by etching in an electron cyclotron resonance plasma. An etch selectivity between a-Si:H and HgCdTe of greater than 4:1 was observed after etching 2,500 nm into the HgCdTe. All of the steps are compatible with processing in vacuum.

  19. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  20. Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

    Science.gov (United States)

    Madejczyk, Paweł; Kębłowski, Artur; Gawron, Waldemar; Martyniuk, Piotr; Kopytko, Małgorzata; Stępień, Dawid; Rutkowski, Jarosław; Piotrowski, Józef; Piotrowski, Adam; Rogalski, Antoni

    2017-09-01

    We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.

  1. Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

    Science.gov (United States)

    Cervera, C.; Boulade, O.; Gravrand, O.; Lobre, C.; Guellec, F.; Sanson, E.; Ballet, P.; Santailler, J. L.; Moreau, V.; Zanatta, J. P.; Fieque, B.; Castelein, P.

    2017-10-01

    This paper presents recent developments at Commissariat à l'Energie atomique, Laboratoire d'Electronique et de Technologie de l'Information infrared laboratory on processing and characterization of p-on- n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in short-wave infrared (SWIR) spectral band for the astrophysics applications. These FPAs have been grown using both liquid phase epitaxy and molecular beam epitaxy on a lattice-matched CdZnTe substrate. This technology exhibits lower dark current and lower series resistance in comparison with n-on- p vacancy-doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in long-wave infrared and very-long-wave infrared spectral bands with cut-off wavelengths from 10 μm up to 17 μm at 78 K and is now evaluated for the SWIR range. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy and liquid phase epitaxy have been investigated. Electro-optical characterizations have been performed on individual photodiodes from test arrays, whereas dark current investigation has been performed with a fully functional readout integrated circuit dedicated to low flux operations.

  2. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    International Nuclear Information System (INIS)

    Paul, S. F.; Marsala, R.

    2006-01-01

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

  3. STUDY ON SIMULATION METHOD OF AVALANCHE : FLOW ANALYSIS OF AVALANCHE USING PARTICLE METHOD

    OpenAIRE

    塩澤, 孝哉

    2015-01-01

    In this paper, modeling for the simulation of the avalanche by a particle method is discussed. There are two kinds of the snow avalanches, one is the surface avalanche which shows a smoke-like flow, and another is the total-layer avalanche which shows a flow like Bingham fluid. In the simulation of the surface avalanche, the particle method in consideration of a rotation resistance model is used. The particle method by Bingham fluid is used in the simulation of the total-layer avalanche. At t...

  4. Crosstalk of HgCdTe LWIR n-on-p diode arrays

    International Nuclear Information System (INIS)

    Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

    2009-01-01

    Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

  5. Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

    Science.gov (United States)

    Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

    2017-11-01

    Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

  6. Analysis of the auger recombination rate in P+N-n-N-N HgCdTe detectors for HOT applications

    Science.gov (United States)

    Schuster, J.; Tennant, W. E.; Bellotti, E.; Wijewarnasuriya, P. S.

    2016-05-01

    Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or "AL"). A variant of this architecture, the P+N-n-N-N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P+N-n-N-N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term "recombination rate" for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P+N-n-N-N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be

  7. Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

    Science.gov (United States)

    Ripamonti, Giancarlo; Lacaita, Andrea L.

    1993-03-01

    The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

  8. A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

    International Nuclear Information System (INIS)

    Binkley, D.M.; Paulus, M.J.; Casey, M.E.; Rochelle, J.M.

    1992-01-01

    In this paper, a low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2μ CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6nV/Hz 1/2 , and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 BGO/APD detector module coupled to the preamplifier is comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 1--kΩ to 50-kΩ range

  9. Monolithic dual-band HgCdTe infrared detector structure

    CSIR Research Space (South Africa)

    Parish, G

    1997-07-01

    Full Text Available A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 mu m and 8-12 mu m, which correspond to the mid...

  10. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  11. Avalanche hazard and control in Kazakhstan

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2014-01-01

    Full Text Available In Kazakhstan, area of 124 thousand km2 is prone to the avalanche hazard. Avalanches are released down in mountain regions situated along the eastern boundary of Kazakhstan. Systematic studies of avalanches here were started in 1958 by explorer I.S. Sosedov; later on, I.V. Seversky continued these investigations in Institute of Geography of the Kazakh Soviet Republic. Actually, he founded the Kazakh school of the avalanche studies. In 1970–1980s, five snow-avalanche stations operated in Kazakhstan: two in Il’ Alatau, two in Zhetysu Alatau, and one in the Altai. At the present time, only two stations and two snow-avalanche posts operate, and all of them are located in Il’ Alatau.Since 1951 to 2013, 75 avalanches took place in Kazakhstan, releases of them caused significant damages. For this period 172 people happened to be under avalanches, among them 86 perished. Large avalanche catastrophes causing human victims and destructions took place in Altai in 1977 and in Karatau in 1990. In spring of 1966, only in Il’ Alatau avalanches destroyed more 600 ha of mature fir (coniferous forest, and the total area of forest destroyed here by avalanches amounts to 2677 ha or 7% of the total forest area.For 48 years of the avalanche observations, there were 15 winters with increased avalanche activity in the river Almatinka basin when total volume of released snow exceeded annual mean value of 147 thousand m3. During this period, number of days with winter avalanches changed from three (in season of 1973/1974 to 28 (1986/1987, the average for a year is 16 days for a season. Winter with the total volume of snow 1300 thousand m3 occur once in 150 years. Individual avalanches with maximal volume of 350 thousand m3 happen once in 80 years.Preventive avalanche releases aimed at protection of roads and settlements are used in Kazakhstan since 1974. These precautions are taken in Il’ Alatau, Altai, and on Kalbinsky Range. Avalanches are released with the

  12. Insight on quantum dot infrared photodetectors

    International Nuclear Information System (INIS)

    Rogalski, A

    2009-01-01

    The paper presents possible future developments of quantum dot infrared photodetectors (QDIPs). At the beginning the fundamental properties of QDIPs are summarized. Next, investigations of the performance of QDIPs, as compared to other types of infrared photodetectors, are presented. Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. Comparison of QDIP performance with HgCdTe detectors gives evidence that the QDIP is suitable for high operation temperature. It can be expected that an improvement in technology and design of QDIP detectors will make it possible to achieve both high sensitivity and fast response useful for practical application at room temperature focal plane arrays. However, so far the QDIP devices have not fully demonstrated their potential advantages.

  13. Liquid-helium scintillation detection with germanium photodiodes

    International Nuclear Information System (INIS)

    Luke, P.N.; Haller, E.E.; Steiner, H.M.

    1982-05-01

    Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

  14. Avalanche risk assessment in Russia

    Science.gov (United States)

    Komarov, Anton; Seliverstov, Yury; Sokratov, Sergey; Glazovskaya, Tatiana; Turchaniniva, Alla

    2017-04-01

    The avalanche prone area covers about 3 million square kilometers or 18% of total area of Russia and pose a significant problem in most mountain regions of the country. The constant growth of economic activity, especially in the North Caucasus region and therefore the increased avalanche hazard lead to the demand of the large-scale avalanche risk assessment methods development. Such methods are needed for the determination of appropriate avalanche protection measures as well as for economic assessments during all stages of spatial planning of the territory. The requirement of natural hazard risk assessments is determined by the Federal Law of Russian Federation. However, Russian Guidelines (SP 11-103-97; SP 47.13330.2012) are not clearly presented concerning avalanche risk assessment calculations. A great size of Russia territory, vast diversity of natural conditions and large variations in type and level of economic development of different regions cause significant variations in avalanche risk values. At the first stage of research the small scale avalanche risk assessment was performed in order to identify the most common patterns of risk situations and to calculate full social risk and individual risk. The full social avalanche risk for the territory of country was estimated at 91 victims. The area of territory with individual risk values lesser then 1×10(-6) covers more than 92 % of mountain areas of the country. Within these territories the safety of population can be achieved mainly by organizational activities. Approximately 7% of mountain areas have 1×10(-6) - 1×10(-4) individual risk values and require specific mitigation measures to protect people and infrastructure. Territories with individual risk values 1×10(-4) and above covers about 0,1 % of the territory and include the most severe and hazardous mountain areas. The whole specter of mitigation measures is required in order to minimize risk. The future development of such areas is not recommended

  15. Growth features of HgCdTe LPE layers

    International Nuclear Information System (INIS)

    Huseynov, E.K.; Eminov, Sh.O.; Ibragimov, T.I.; Ismaylov, N.J.; Rajabli, A.A.

    2010-01-01

    Full text : The results of growth of Hg 1 -xCd x Te (MCT) layers by liquid phase epitaxy (LPE) from Te-rich solutions (molar fraction (Hg 1 -zCd z )(1.y)Te y , z=0.054, y=0.805 for TL=501 degrees Celsium) obtained by the tipping method in closed system is presented. Epitaxial layers with different compositions (x=0.20-0.22) and thicknesses (10-20 μm) suitable for manufacturing the photodiode structures operable at 8-14 μm spectrum range were grown on B oriented Cd 0 .96Zn 0 ,04Te polished and repolished substrates. The growth was carried out in the temperature range 500-480 degrees Celsium with cooling rates 0.05-0.1 degrees Celsium/min in a sealed quartz ampoule using the original apparatus for LPE. The attention was paid mainly to the surface morphological quality, good decantation from the layers, uniformity of composition and thickness of films. One of the limitations of the most LPE growth apparatus (cassettes) with slider or tipping system is their impossibility to wipe the last drop of growth solution from the surface of just-grown epilayer. Some remnant or residual of the growth solution tends to adhere to the surface of the epilayer after growth in such apparatus and strongly affect the surface quality. The novel apparatus for LPE providing the surface without unwanted residual drops of melt solution of Hg, Cd and Te was developed with the aim of solving such a problem. The effect of different steps of LPE growth on morphology and composition of epitaxial layers was studied. By holding the CdZnTe substrate inside the growth ampoule at the melt homogenization temperature during of 15-50 min without contact with the melt resulted in visually (using the Leitzorthoplan microscopes x 500-1000) observed surface roughness. Using the expressions for the Te-angle of Hg-Cd-Te phase diagram the effect of the preliminary synthesis of the source on liquidus temperature and composition of the epilayers was numerically evaluated. HgCdTe layers were characterized using

  16. A probabilistic model for snow avalanche occurrence

    Science.gov (United States)

    Perona, P.; Miescher, A.; Porporato, A.

    2009-04-01

    Avalanche hazard forecasting is an important issue in relation to the protection of urbanized environments, ski resorts and of ski-touring alpinists. A critical point is to predict the conditions that trigger the snow mass instability determining the onset and the size of avalanches. On steep terrains the risk of avalanches is known to be related to preceding consistent snowfall events and to subsequent changes in the local climatic conditions. Regression analysis has shown that avalanche occurrence indeed correlates to the amount of snow fallen in consecutive three snowing days and to the state of the settled snow at the ground. Moreover, since different type of avalanches may occur as a result of the interactions of different factors, the process of snow avalanche formation is inherently complex and with some degree of unpredictability. For this reason, although several models assess the risk of avalanche by accounting for all the involved processes with a great detail, a high margin of uncertainty invariably remains. In this work, we explicitly describe such an unpredictable behaviour with an intrinsic noise affecting the processes leading snow instability. Eventually, this sets the basis for a minimalist stochastic model, which allows us to investigate the avalanche dynamics and its statistical properties. We employ a continuous time process with stochastic jumps (snowfalls), deterministic decay (snowmelt and compaction) and state dependent avalanche occurrence (renewals) as a minimalist model for the determination of avalanche size and related intertime occurrence. The physics leading to avalanches is simplified to the extent where only meteorological data and terrain data are necessary to estimate avalanche danger. We explore the analytical formulation of the process and the properties of the probability density function of the avalanche process variables. We also discuss what is the probabilistic link between avalanche size and preceding snowfall event and

  17. Spatial shape of avalanches

    Science.gov (United States)

    Zhu, Zhaoxuan; Wiese, Kay Jörg

    2017-12-01

    In disordered elastic systems, driven by displacing a parabolic confining potential adiabatically slowly, all advance of the system is in bursts, termed avalanches. Avalanches have a finite extension in time, which is much smaller than the waiting time between them. Avalanches also have a finite extension ℓ in space, i.e., only a part of the interface of size ℓ moves during an avalanche. Here we study their spatial shape 〈S(x ) 〉 ℓ given ℓ , as well as its fluctuations encoded in the second cumulant 〈S2(x ) 〉 ℓ c. We establish scaling relations governing the behavior close to the boundary. We then give analytic results for the Brownian force model, in which the microscopic disorder for each degree of freedom is a random walk. Finally, we confirm these results with numerical simulations. To do this properly we elucidate the influence of discretization effects, which also confirms the assumptions entering into the scaling ansatz. This allows us to reach the scaling limit already for avalanches of moderate size. We find excellent agreement for the universal shape and its fluctuations, including all amplitudes.

  18. Low Cost silicon photodiodes for alpha spectrometry

    International Nuclear Information System (INIS)

    Khoury, H.; Lopes, A.; Hazin, C.; Lira, C.B.; Silva, E. da

    1998-01-01

    This study was carried out to evaluate the suitability of using commercially available photodiodes for alpha spectrometry, since the principle on which both operate are similar. Photodiodes are low priced compared to the commonly used semiconductor detectors making them potentially useful for research and teaching purposes. Very thin calibrated alpha sources of 2 41 A m, 2 44 C m and 2 35 U , produced at the Metrology Laboratory of IRD/CNEN, were used to test the performance of three photodiodes. The results showed that the responses of the photodiodes were linear with the alpha particle energy and that the energy resolution varied between 0,79% and 0,45%, with an efficiency of 8%. The resolution and efficiency presented by the photodiodes tested are similar to those obtained with other semiconductor detectors, evidencing that they can be used successfully as alpha detectors

  19. Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

    Science.gov (United States)

    Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

    2018-01-01

    The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

  20. Surface passivation of HgCdTe by CdZnTe and its characteristics

    Science.gov (United States)

    Lee, T. S.; Choi, K. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Y. H.; Chang, J. M.; Song, W. S.; Kim, S. U.; Park, M. J.; Lee, S. D.

    1997-06-01

    In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (tox ˜ few ten Å) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.

  1. Calibration of snow avalanche mathematical models using the data of real avalanches in the Ile (Zailiyskiy Alatau Range

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2017-01-01

    Full Text Available The calibration of the dry friction and turbulent friction coefficients is necessary for computer simulation of avalanches. The method of back calculation based on data on actual avalanches is used for this purpose. The article presents the results of the calibration of the Eglit’s and RAMMS models for Ile Alatau range condi‑ tions. The range is located in Kazakhstan. The data on six avalanches in the same avalanche site were used. Five avalanches were dry, and one avalanche was wet. Avalanches volume varied from 2000 to 12000  m3. Maximum speed avalanches were between 15 and 30  m/s, the flow height  – from 3 to 10  m. Series of back calculations with different values of the friction coefficients was made to obtain the calibrated coeffi‑ cients. The calibrated coefficients were chosen under condition of the best fit with real avalanches. The cal‑ ibrated coefficients were following. For the Eglit’s model for dry avalanches of the volume 2000–5000  m3 μ = 0.46÷0.48, k = 0.005–0.006, and the volume 8000–12000 m3 μ = 0.38÷0.42, k = 0.002÷0.003. For RAMMS model for dry avalanches of the volume of 2000–5000 m3 μ (dry friction coefficient = 0.35÷0.4, ξ (viscous friction coefficient = 1500÷2000 m/s2, and the volume 8,000–12,000 m3 μ = 0.3÷0.35, ξ = 2000÷3000 m/s2. For wet avalanches of the volume 12,000 m3 μ = 0.35, ξ = 1500 m/s2. The work on the calibration will be con‑ tinued to obtain the friction coefficients for the Eglit’s and RAMMS models. The additional data on real ava‑ lanches will be needed for this purpose.

  2. Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

    International Nuclear Information System (INIS)

    Kyuregyan, A. S.

    2015-01-01

    A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

  3. Avalanches and Criticality in Driven Magnetic Skyrmions

    Science.gov (United States)

    Díaz, S. A.; Reichhardt, C.; Arovas, D. P.; Saxena, A.; Reichhardt, C. J. O.

    2018-03-01

    We show using numerical simulations that slowly driven Skyrmions interacting with random pinning move via correlated jumps or avalanches. The avalanches exhibit power-law distributions in their duration and size, and the average avalanche shape for different avalanche durations can be scaled to a universal function, in agreement with theoretical predictions for systems in a nonequilibrium critical state. A distinctive feature of Skyrmions is the influence of the nondissipative Magnus term. When we increase the ratio of the Magnus term to the damping term, a change in the universality class of the behavior occurs, the average avalanche shape becomes increasingly asymmetric, and individual avalanches exhibit motion in the direction perpendicular to their own density gradient.

  4. Avalanches in insulating gases

    International Nuclear Information System (INIS)

    Verhaart, H.F.A.

    1982-01-01

    Avalanches of charged particles in gases are often studied with the ''electrical method'', the measurement of the waveform of the current in the external circuit. In this thesis a substantial improvement of the time resolution of the measuring setup, to be used for the electrical method, is reported. The avalanche is started by an N 2 -laser with a pulse duration of only 0.6 ns. With this laser it is possible to release a high number of primary electrons (some 10 8 ) which makes it possible to obtain sizeable signals, even at low E/p values. With the setup it is possible to analyze current waveforms with a time resolution down to 1.4 ns, determined by both the laser and the measuring system. Furthermore it is possible to distinguish between the current caused by the electrons and the current caused by the ions in the avalanche and to monitor these currents simultaneously. Avalanche currents are measured in N 2 , CO 2 , O 2 , H 2 O, air of varying humidity, SF 6 and SF 6 /N 2 mixtures. Depending on the nature of the gas and the experimental conditions, processes as diffusion, ionization, attachment, detachment, conversion and secondary emission are observed. Values of parameters with which these processes can be described, are derived from an analysis of the current waveforms. For this analysis already published theories and new theories described in this thesis are used. The drift velocity of both the electrons and the ions could be easily determined from measured avalanche currents. Special attention is paid to avalanches in air becasue of the practical importance of air insulation. (Auth.)

  5. Arsenic complexes optical signatures in As-doped HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. [CEA-LETI Minatec Campus, 17 rue des Martyrs, 38000 Grenoble (France)

    2013-04-08

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  6. Arsenic complexes optical signatures in As-doped HgCdTe

    International Nuclear Information System (INIS)

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G.

    2013-01-01

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  7. Photodiodes utilization as ionizing radiation detectors

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A. de

    1987-01-01

    The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

  8. Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kyuregyan, A. S., E-mail: ask@vei.ru [Lenin All-Russia Electrical Engineering Institute (Russian Federation)

    2015-07-15

    A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

  9. Energy and dissipated work in snow avalanches

    Science.gov (United States)

    Bartelt, P.; Buser, O.

    2004-12-01

    Using the results of large scale avalanche experiments at the Swiss Vallée de la Sionne test site, the energy balance of several snow avalanches is determined. Avalanches convert approximately one-seventh of their potential energy into kinetic energy. The total potential energy depends strongly on the entrained snowcover, indicating that entrainment processes cannot be ignored when predicting terminal velocities and runout distances. We find energy dissipation rates on the order of 1 GW. Fluidization of the fracture slab can be identified in the experiments as an increase in dissipation rate, thereby explaining the initial and rapid acceleration of avalanches after release. Interestingly, the dissipation rates appear to be constant along the track, although large fluctuations in internal velocity exist. Thus, we can demonstrate within the context of non-equilibrium thermodynamics that -- in space -- granular snow avalanches are irreversible, dissipative systems that minimize entropy production because they appear to reach a steady-state non-equilibrium. A thermodynamic analysis reveals that fluctuations in velocity depend on the roughness of the flow surface and viscosity of the granular system. We speculate that this property explains the transition from flowing avalanches to powder avalanches.

  10. Low-cost amplifier for alpha detection with photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Domienikan, Cláudio; Costa, Priscila; Genezini, Frederico A.; Zahn, Guilherme S., E-mail: clanikan@ipen.br, E-mail: pcosta@ipen.br, E-mail: fredzini@ipen.br, E-mail: gzahn@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A low-cost amplifier for Hamamatsu S3590-09 PIN photodiode to be used in alpha detection is presented. This amplifier consists basically of two circuits: a pulse preamplifier and a shaper-driver. The PIN photodiode is reverse-biased and connected to a charge preamplifier input. Incident alpha particles generate a small current pulse in the photodiode. The integrating circuit of the low noise preamplifier transforms current pulse into a voltage pulse with amplitude proportional to the charge carried by the current pulse. The shaper-driver consists of a differentiator and an integrator and is responsible for filtering and further amplifying the preamplifier signal, generating a NIM-compatible energy pulse. The performance of the set photodiode-amplifier was successively tested through the use of a {sup 243}Am radioactive source. The low-cost photodiode amplifier was designed and constructed at IPEN - CNEN/SP using national components and expertise. (author)

  11. The photodiodes response in beta dosimetry

    International Nuclear Information System (INIS)

    Khoury, Helen; Amaral, Ademir; Hazin, Clovis; Melo, Francisco

    1996-01-01

    The response of the photodiodes BPY-12, BPW-34 and SFH-206 is tested for use as beta dosimeters. The results obtained show a dose-response relationships as well as less than 1% of coefficient of variation for the reproducibility of their responses. The photodiode BPY-12 has presented a better response in comparison with the others

  12. Imaging findings of avalanche victims

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Alexandra B.; Grosse, Claudia A.; Anderson, Suzanne [University Hospital of Berne, Inselspital, Department of Diagnostic, Pediatric and Interventional Radiology, Berne (Switzerland); Steinbach, Lynne S. [University of California San Francisco, Department of Radiology, San Francisco, CA (United States); Zimmermann, Heinz [University Hospital of Berne, Inselspital, Department of Trauma and Emergency Medicine, Berne (Switzerland)

    2007-06-15

    Skiing and hiking outside the boundaries remains an attractive wilderness activity despite the danger of avalanches. Avalanches occur on a relatively frequent basis and may be devastating. Musculoskeletal radiologists should be acquainted with these injuries. Fourteen avalanche victims (11 men and 3 women; age range 17-59 years, mean age 37.4 years) were air transported to a high-grade trauma centre over a period of 2 years. Radiographs, CT and MR images were prospectively evaluated by two observers in consensus. Musculoskeletal findings (61%) were more frequent than extraskeletal findings (39%). Fractures were most commonly seen (36.6%), involving the spine (14.6%) more frequently than the extremities (9.8%). Blunt abdominal and thoracic trauma were the most frequent extraskeletal findings. A wide spectrum of injuries can be found in avalanche victims, ranging from extremity fractures to massive polytrauma. Asphyxia remains the main cause of death along with hypoxic brain injury and hypothermia. (orig.)

  13. Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

    Science.gov (United States)

    Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

    2015-06-01

    Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

  14. New silicon photodiodes for detection of the 1064nm wavelength radiation

    Science.gov (United States)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

    2016-12-01

    In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

  15. Measuring neuronal avalanches in disordered systems with absorbing states

    Science.gov (United States)

    Girardi-Schappo, M.; Tragtenberg, M. H. R.

    2018-04-01

    Power-law-shaped avalanche-size distributions are widely used to probe for critical behavior in many different systems, particularly in neural networks. The definition of avalanche is ambiguous. Usually, theoretical avalanches are defined as the activity between a stimulus and the relaxation to an inactive absorbing state. On the other hand, experimental neuronal avalanches are defined by the activity between consecutive silent states. We claim that the latter definition may be extended to some theoretical models to characterize their power-law avalanches and critical behavior. We study a system in which the separation of driving and relaxation time scales emerges from its structure. We apply both definitions of avalanche to our model. Both yield power-law-distributed avalanches that scale with system size in the critical point as expected. Nevertheless, we find restricted power-law-distributed avalanches outside of the critical region within the experimental procedure, which is not expected by the standard theoretical definition. We remark that these results are dependent on the model details.

  16. A method to eliminate wetting during the homogenization of HgCdTe

    Science.gov (United States)

    Su, Ching-Hua; Lehoczky, S. L.; Szofran, F. R.

    1986-01-01

    Adhesion of HgCdTe samples to fused silica ampoule walls, or 'wetting', during the homogenization process was eliminated by adopting a slower heating rate. The idea is to decrease Cd activity in the sample so as to reduce the rate of reaction between Cd and the silica wall.

  17. The development of the room temperature LWIR HgCdTe detectors for free space optics communication systems

    Science.gov (United States)

    Martyniuk, Piotr; Gawron, Waldemar; Mikołajczyk, Janusz

    2017-10-01

    There are many room temperature applications to include free space optics (FSO) communication system combining quantum cascade lasers sources where HgCdTe long-wave (8-12 micrometer) infrared radiation (LWIR) detector reaching ultrafast response time 109 cmHz1/2/W. Since commercially available FSO could operate separately in SWIR, MWIR and LWIR range - the dual band detectors should be implemented into FSO. This paper shows theoretical performance of the dual band back-to-back MWIR and LWIR HgCdTe detector operating at 300 K pointing out the MWIR active layer influence on LWIR operating regime.

  18. Spatial determination of magnetic avalanche ignition points

    International Nuclear Information System (INIS)

    Jaafar, Reem; McHugh, S.; Suzuki, Yoko; Sarachik, M.P.; Myasoedov, Y.; Zeldov, E.; Shtrikman, H.; Bagai, R.; Christou, G.

    2008-01-01

    Using time-resolved measurements of local magnetization in the molecular magnet Mn 12 -ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends

  19. Spatial determination of magnetic avalanche ignition points

    Energy Technology Data Exchange (ETDEWEB)

    Jaafar, Reem; McHugh, S.; Suzuki, Yoko [Physics Department, City College of the City University of New York, New York, NY 10031 (United States); Sarachik, M.P. [Physics Department, City College of the City University of New York, New York, NY 10031 (United States)], E-mail: sarachik@sci.ccny.cuny.edu; Myasoedov, Y.; Zeldov, E.; Shtrikman, H. [Department Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100 (Israel); Bagai, R.; Christou, G. [Department of Chemistry, University of Florida, Gainesville, FL 32611 (United States)

    2008-03-15

    Using time-resolved measurements of local magnetization in the molecular magnet Mn{sub 12}-ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends.

  20. Real time avalanche detection for high risk areas.

    Science.gov (United States)

    2014-12-01

    Avalanches routinely occur on State Highway 21 (SH21) between Lowman and Stanley, Idaho each winter. The avalanches pose : a threat to the safety of maintenance workers and the traveling public. A real-time avalanche detection system will allow the :...

  1. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, E.; Hendrikx, J.; Fagre, D. B.

    2013-12-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  2. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, Erich H.; Hendrikx, Jordy; Fagre, Daniel B.

    2014-01-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  3. Development of Buffer Layer Technologies for LWIR and VLWIR HgCdTe Integration on Si

    National Research Council Canada - National Science Library

    Golding, Terry D

    2005-01-01

    This program proposed to develop manufacturable, cost-effective buffer layer technologies that would allow either hybrid or monolithic integration of LWIR and VLWIR HgCdTe infrared focal plane arrays...

  4. Development of a gamma dosimeter using a photodiode

    International Nuclear Information System (INIS)

    Melo, F.A. de.

    1988-05-01

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab

  5. Actinide oxide photodiode and nuclear battery

    Energy Technology Data Exchange (ETDEWEB)

    Sykora, Milan; Usov, Igor

    2017-12-05

    Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

  6. Thermal Cycle Annealing and its Application to Arsenic-Ion Implanted HgCdTe

    Science.gov (United States)

    2014-06-26

    Rao Mulpuri Sina Simingalam, Priyalal Wijewarnasuriya, Mulpuri V. Rao 1720BH c. THIS PAGE The public reporting burden for this collection of...Implanted HgCdTe Sina Simingalama,b,c, Priyalal Wijewarnasuriyab, Mulpuri V. Raoc a. School of Physics, Astronomy and Computational Sciences, George

  7. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  8. Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Morozov, S. V.; Rumyantsev, V. V., E-mail: rumyantsev@ipmras.ru; Dubinov, A. A.; Kudryavtsev, K. E.; Antonov, A. V.; Gavrilenko, V. I. [Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Kadykov, A. M. [Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation); UMR CNRS 5221, GIS-TERALAB, Université Montpellier II, 34095 Montpellier (France); Mikhailov, N. N. [A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Dvoretskii, S. A. [A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation)

    2016-02-29

    Stimulated emission from waveguide HgCdTe structures with several quantum wells inside waveguide core is demonstrated at wavelengths up to 9.5 μm. Photoluminescence line narrowing down to kT energy, as well as superlinear rise in its intensity evidence the onset of the stimulated emission, which takes place under optical pumping with intensity as small as ∼0.1 kW/cm{sup 2} at 18 K and 1 kW/cm{sup 2} at 80 K. One can conclude that HgCdTe structures potential for long-wavelength lasers is not exhausted.

  9. Rock-avalanche dynamics revealed by large-scale field mapping and seismic signals at a highly mobile avalanche in the West Salt Creek valley, western Colorado

    Science.gov (United States)

    Coe, Jeffrey A.; Baum, Rex L.; Allstadt, Kate E.; Kochevar, Bernard; Schmitt, Robert G.; Morgan, Matthew L.; White, Jonathan L.; Stratton, Benjamin T.; Hayashi, Timothy A.; Kean, Jason W.

    2016-01-01

    On 25 May 2014, a rain-on-snow–induced rock avalanche occurred in the West Salt Creek valley on the northern flank of Grand Mesa in western Colorado (United States). The avalanche mobilized from a preexisting rock slide in the Green River Formation and traveled 4.6 km down the confined valley, killing three people. The avalanche was rare for the contiguous United States because of its large size (54.5 Mm3) and high mobility (height/length = 0.14). To understand the avalanche failure sequence, mechanisms, and mobility, we conducted a forensic analysis using large-scale (1:1000) structural mapping and seismic data. We used high-resolution, unmanned aircraft system imagery as a base for field mapping, and analyzed seismic data from 22 broadband stations (distances earth and tracked these forces using curves in the avalanche path. Our results revealed that the rock avalanche was a cascade of landslide events, rather than a single massive failure. The sequence began with an early morning landslide/debris flow that started ∼10 h before the main avalanche. The main avalanche lasted ∼3.5 min and traveled at average velocities ranging from 15 to 36 m/s. For at least two hours after the avalanche ceased movement, a central, hummock-rich core continued to move slowly. Since 25 May 2014, numerous shallow landslides, rock slides, and rock falls have created new structures and modified avalanche topography. Mobility of the main avalanche and central core was likely enhanced by valley floor material that liquefied from undrained loading by the overriding avalanche. Although the base was likely at least partially liquefied, our mapping indicates that the overriding avalanche internally deformed predominantly by sliding along discrete shear surfaces in material that was nearly dry and had substantial frictional strength. These results indicate that the West Salt Creek avalanche, and probably other long-traveled avalanches, could be modeled as two layers: a thin, liquefied

  10. Characterizing the nature and variability of avalanche hazard in western Canada

    Science.gov (United States)

    Shandro, Bret; Haegeli, Pascal

    2018-04-01

    The snow and avalanche climate types maritime, continental and transitional are well established and have been used extensively to characterize the general nature of avalanche hazard at a location, study inter-seasonal and large-scale spatial variabilities and provide context for the design of avalanche safety operations. While researchers and practitioners have an experience-based understanding of the avalanche hazard associated with the three climate types, no studies have described the hazard character of an avalanche climate in detail. Since the 2009/2010 winter, the consistent use of Statham et al. (2017) conceptual model of avalanche hazard in public avalanche bulletins in Canada has created a new quantitative record of avalanche hazard that offers novel opportunities for addressing this knowledge gap. We identified typical daily avalanche hazard situations using self-organizing maps (SOMs) and then calculated seasonal prevalence values of these situations. This approach produces a concise characterization that is conducive to statistical analyses, but still provides a comprehensive picture that is informative for avalanche risk management due to its link to avalanche problem types. Hazard situation prevalence values for individual seasons, elevations bands and forecast regions provide unprecedented insight into the inter-seasonal and spatial variability of avalanche hazard in western Canada.

  11. Photodiode measurements in Nucte-II

    International Nuclear Information System (INIS)

    Machida, M.; Aramaki, E.A.; Takahashi, T.; Ohara, M.; Nogi, N.

    1989-01-01

    Direct measurements of light emission from plasma produced by a field reversed theta-pinch NUCTE-II have been performed by using a set of photodiode detectors. The analysis shows that the plasma light emission can be related to the bremsstrahlung radiation and it is used to identify η=2 rotational instability parameters as rotation direction, angular velocity, and radial and axial displacement of the plasma column. A rough estimate for the temporal behaviour of the electro temperature has also been obtained by using the photodiode signal together with He-Ne laser interferometer and flux excluded signals. (author) [pt

  12. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  13. Criticality and avalanches in neural networks

    International Nuclear Information System (INIS)

    Zare, Marzieh; Grigolini, Paolo

    2013-01-01

    Highlights: • Temporal criticality is used as criticality indicator. • The Mittag–Leffler function is proposed as a proper form of temporal complexity. • The distribution of avalanche size becomes scale free in the supercritical state. • The scale-free distribution of avalanche sizes is an epileptic manifestation. -- Abstract: Experimental work, both in vitro and in vivo, reveals the occurrence of neural avalanches with an inverse power law distribution in size and time duration. These properties are interpreted as an evident manifestation of criticality, thereby suggesting that the brain is an operating near criticality complex system: an attractive theoretical perspective that according to Gerhard Werner may help to shed light on the origin of consciousness. However, a recent experimental observation shows no clear evidence for power-law scaling in awake and sleeping brain of mammals, casting doubts on the assumption that the brain works at criticality. This article rests on a model proposed by our group in earlier publications to generate neural avalanches with the time duration and size distribution matching the experimental results on neural networks. We now refine the analysis of the time distance between consecutive firing bursts and observe the deviation of the corresponding distribution from the Poisson statistics, as the system moves from the non-cooperative to the cooperative regime. In other words, we make the assumption that the genuine signature of criticality may emerge from temporal complexity rather than from the size and time duration of avalanches. We argue that the Mittag–Leffler (ML) exponential function is a satisfactory indicator of temporal complexity, namely of the occurrence of non-Poisson and renewal events. The assumption that the onset of criticality corresponds to the birth of renewal non-Poisson events establishes a neat distinction between the ML function and the power law avalanches generating regime. We find that

  14. Evaluation of Rockwell HgCdTe arrays for astronomical use

    Science.gov (United States)

    Lebofsky, M. J.; Montgomery, E. F.; Kailey, W. F.

    1986-01-01

    The 32 x 32 HgCdTe array manufactured by Rockwell International was proven to be a highly competitive detector type for use at wavelengths shorter than 2.5 microns. The goal of a K=+16 sky survey using this array attached to the Steward Observatory Transit Telescope is clearly within reach. The detector material exhibits high quantum efficiency and low dark currents indicating that its usefulness may extend beyond its use with a CCD readout on groundbased telescopes.

  15. High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

    Science.gov (United States)

    Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

    2012-05-07

    This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

  16. Configurable Electronics with Low Noise and 14-bit Dynamic Range for Photodiode-based Photon Detectors

    CERN Document Server

    Müller, H; Yin, Z; Zhou, D; Cao, X; Li, Q; Liu, Y; Zou, F; Skaali, B; Awes, T C

    2006-01-01

    We describe the principles and measured performance characteristics of custom configurable 32-channel shaper/digitizer Front End Electronics (FEE) cards with 14-bit dynamic range for use with gain-adjustable photon detectors. The electronics has been designed for the PHOS calorimeter of ALICE with avalanche photodiode (APD) readout operated at -25 C ambient temperature and a signal shaping time of $1 {\\mu}s$. The electronics has also been adopted by the EMCal detector of ALICE with the same APD readout, but operated at an ambient temperature of +20 C and with a shaping time of 100ns. The CR-RC2 signal shapers on the FEE cards are implemented in discrete logic on a 10-layer board with two shaper sections for each input channel. The two shaper sections with gain ratio of 16:1 are digitized by 10-bit ADCs and provide an effective dynamic range of 14 bits. Gain adjustment for each individual APD is available through 32 bias voltage control registers of 10-bit range. The fixed gains and shaping times of the pole-z...

  17. Influence of Temperature Variation on Optical Receiver Sensitivity and its Compensation

    Directory of Open Access Journals (Sweden)

    A. Prokes

    2007-09-01

    Full Text Available In the paper, the influence of temperature variation on the sensitivity of an avalanche-photodiode-based optical receiver applied in the free space optical communication link is discussed. Communication systems of this type are exposed to a wide range of operating temperatures, which markedly affect many photodiode and preamplifier parameters. The paper presents a receiver sensitivity calculation, taking into consideration the temperature dependence of avalanche photodiode gain, excess noise factor, dark current and thermal noise of preamplifier resistances, and describes the compensation of temperature effects on photodiode gain based on a corresponding change in the reverse voltage applied to the diode. The calculations are demonstrated on the connection of a small-area silicon APD operating in the wavelength range from 820 to 1150 nm with a transimpedance preamplifier using a bipolar junction transistor.

  18. A Study of Photoreceivers for Free-Space, Analog, Intensity-Modulated, Direct-Detection Optical Links Operating at Microwave Frequencies

    Science.gov (United States)

    2010-09-10

    photodiode with internal resistor followed by a high-gain RF amplifier , and c) a p-i-n photodiode followed by a transimpedance amplifier (TIA). We...gain, RF electrical amplifier ; and 3) a p-i-n photodiode followed by a transimpedance amplifier . Finally, we perform calculations to predict the...common photoreceiver is a p-i-n or avalanche photodiode with a built-in transimpedance amplifier (TIA) and often incorporating automatic gain control

  19. Avalanche photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

  20. Avalanche photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  1. First approximations in avalanche model validations using seismic information

    Science.gov (United States)

    Roig Lafon, Pere; Suriñach, Emma; Bartelt, Perry; Pérez-Guillén, Cristina; Tapia, Mar; Sovilla, Betty

    2017-04-01

    Avalanche dynamics modelling is an essential tool for snow hazard management. Scenario based numerical modelling provides quantitative arguments for decision-making. The software tool RAMMS (WSL Institute for Snow and Avalanche Research SLF) is one such tool, often used by government authorities and geotechnical offices. As avalanche models improve, the quality of the numerical results will depend increasingly on user experience on the specification of input (e.g. release and entrainment volumes, secondary releases, snow temperature and quality). New model developments must continue to be validated using real phenomena data, for improving performance and reliability. The avalanches group form University of Barcelona (RISKNAT - UB), has studied the seismic signals generated from avalanches since 1994. Presently, the group manages the seismic installation at SLF's Vallée de la Sionne experimental site (VDLS). At VDLS the recorded seismic signals can be correlated to other avalanche measurement techniques, including both advanced remote sensing methods (radars, videogrammetry) and obstacle based sensors (pressure, capacitance, optical sender-reflector barriers). This comparison between different measurement techniques allows the group to address the question if seismic analysis can be used alone, on more additional avalanche tracks, to gain insight and validate numerical avalanche dynamics models in different terrain conditions. In this study, we aim to add the seismic data as an external record of the phenomena, able to validate RAMMS models. The seismic sensors are considerable easy and cheaper to install than other physical measuring tools, and are able to record data from the phenomena in every atmospheric conditions (e.g. bad weather, low light, freezing make photography, and other kind of sensors not usable). With seismic signals, we record the temporal evolution of the inner and denser parts of the avalanche. We are able to recognize the approximate position

  2. Anthropogenic effect on avalanche and debris flow activity

    OpenAIRE

    S. A. Sokratov; Yu. G. Seliverstov; A. L. Shnyparkov; K. P. Koltermann

    2013-01-01

    The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoida...

  3. Dealing with the white death: avalanche risk management for traffic routes.

    Science.gov (United States)

    Rheinberger, Christoph M; Bründl, Michael; Rhyner, Jakob

    2009-01-01

    This article discusses mitigation strategies to protect traffic routes from snow avalanches. Up to now, mitigation of snow avalanches on many roads and railways in the Alps has relied on avalanche sheds, which require large initial investments resulting in high opportunity costs. Therefore, avalanche risk managers have increasingly adopted organizational mitigation measures such as warning systems and closure policies instead. The effectiveness of these measures is, however, greatly dependent on human decisions. In this article, we present a method for optimizing avalanche mitigation for traffic routes in terms of both their risk reduction impact and their net benefit to society. First, we introduce a generic framework for assessing avalanche risk and for quantifying the impact of mitigation. This allows for sound cost-benefit comparisons between alternative mitigation strategies. Second, we illustrate the framework with a case study from Switzerland. Our findings suggest that site-specific characteristics of avalanche paths, as well as the economic importance of a traffic route, are decisive for the choice of optimal mitigation strategies. On routes endangered by few avalanche paths with frequent avalanche occurrences, structural measures are most efficient, whereas reliance on organizational mitigation is often the most appropriate strategy on routes endangered by many paths with infrequent or fuzzy avalanche risk. Finally, keeping a traffic route open may be very important for tourism or the transport industry. Hence, local economic value may promote the use of a hybrid strategy that combines organizational and structural measures to optimize the resource allocation of avalanche risk mitigation.

  4. Statistics of Electron Avalanches and Streamers

    Directory of Open Access Journals (Sweden)

    T. Ficker

    2007-01-01

    Full Text Available We have studied the severe systematic deviations of populations of electron avalanches from the Furry distribution, which has been held to be the statistical law corresponding to them, and a possible explanation has been sought. A  new theoretical concept based on fractal avalanche multiplication has been proposed and is shown to be a convenient candidate for explaining these deviations from Furry statistics. 

  5. Transient events in bright debris discs: Collisional avalanches revisited

    Science.gov (United States)

    Thebault, P.; Kral, Q.

    2018-01-01

    Context. A collisional avalanche is set off by the breakup of a large planetesimal, releasing vast amounts of small unbound grains that enter a debris disc located further away from the star, triggering there a collisional chain reaction that could potentially create detectable transient structures. Aims: We investigate this mechanism, using for the first time a fully self-consistent code coupling dynamical and collisional evolutions. We also quantify for the first time the photometric evolution of the system and investigate whether or not avalanches could explain the short-term luminosity variations recently observed in some extremely bright debris discs. Methods: We use the state-of-the-art LIDT-DD code. We consider an avalanche-favoring A6V star, and two set-ups: a "cold disc" case, with a dust release at 10 au and an outer disc extending from 50 to 120 au, and a "warm disc" case with the release at 1 au and a 5-12 au outer disc. We explore, in addition, two key parameters: the density (parameterized by its optical depth τ) of the main outer disc and the amount of dust released by the initial breakup. Results: We find that avalanches could leave detectable structures on resolved images, for both "cold" and "warm" disc cases, in discs with τ of a few 10-3, provided that large dust masses (≳1020-5 × 1022 g) are initially released. The integrated photometric excess due to an avalanche is relatively limited, less than 10% for these released dust masses, peaking in the λ 10-20 μm domain and becoming insignificant beyond 40-50 μm. Contrary to earlier studies, we do not obtain stronger avalanches when increasing τ to higher values. Likewise, we do not observe a significant luminosity deficit, as compared to the pre-avalanche level, after the passage of the avalanche. These two results concur to make avalanches an unlikely explanation for the sharp luminosity drops observed in some extremely bright debris discs. The ideal configuration for observing an

  6. Snow Avalanche Disturbance Ecology: Examples From the San Juan Mountains, Colorado.

    Science.gov (United States)

    Simonson, S.; Fassnacht, S. R.

    2008-12-01

    We evaluated landscape ecology approaches to characterize snow avalanche paths based on patterns of plant species composition and evidence of disturbance. Historical records of avalanche incidents, patterns in the annual growth layers of woody plants, and distributions of plant species can be used to quantify and map the frequency and magnitude of snow slide events. Near Silverton, Colorado, a series of snow storms in January of 2005 resulted in many avalanche paths running full track at 30 and 100 year return frequency. Many avalanches cut fresh trimlines, widening their tracks by uprooting, stripping, and breaking mature trees. Powerful avalanches deposited massive piles of snow, rocks, and woody debris in their runout zones. We used cross-section discs and cores of representative downed trees to detect dendro-ecological signals of past snow avalanche disturbance. Avalanche signals included impact scars from the moving snow and associated wind blast, relative width of annual growth rings, and development of reaction wood in response to tilting. Initial measurements of plant diversity and disturbance along the elevation gradient of an avalanche path near Silverton indicate that avalanche activity influences patterns of forest cover, contributes to the high local plant species diversity, and provides opportunities for new seedling establishment.

  7. SNOW AVALANCHE ACTIVITY IN PARÂNG SKI AREA REVEALED BY TREE-RINGS

    Directory of Open Access Journals (Sweden)

    F. MESEȘAN

    2014-11-01

    Full Text Available Snow Avalanche Activity in Parâng Ski Area Revealed by Tree-Rings. Snow avalanches hold favorable conditions to manifest in Parâng Mountains but only one event is historically known, without destructive impact upon infrastructure or fatalities and this region wasn’t yet the object of avalanche research. The existing ski infrastructure of Parâng resort located in the west of Parâng Mountains is proposed to be extended in the steep slopes of subalpine area. Field evidence pinpoints that these steep slopes were affected by snow avalanches in the past. In this study we analyzed 11 stem discs and 31 increment cores extracted from 22 spruces (Picea abies (L. Karst impacted by avalanches, in order to obtain more information about past avalanches activity. Using the dendrogeomorphological approach we found 13 avalanche events that occurred along Scărița avalanche path, since 1935 until 2012, nine of them produced in the last 20 years. The tree-rings data inferred an intense snow avalanche activity along this avalanche path. This study not only calls for more research in the study area but also proves that snow avalanches could constitute an important restrictive factor for the tourism infrastructure and related activities in the area. It must be taken into consideration by the future extension of tourism infrastructure. Keywords: snow avalanche, Parâng Mountains, dendrogeomorphology, ski area.

  8. Relating rock avalanche morphology to emplacement processes

    Science.gov (United States)

    Dufresne, Anja; Prager, Christoph; Bösmeier, Annette

    2015-04-01

    The morphology, structure and sedimentological characteristics of rock avalanche deposits reflect both internal emplacement processes and external influences, such as runout path characteristics. The latter is mainly predisposed by topography, substrate types, and hydrogeological conditions. Additionally, the geological setting at the source slope controls, e.g. the spatial distribution of accumulated lithologies and hence material property-related changes in morphology, or the maximum clast size and amount of fines of different lithological units. The Holocene Tschirgant rock avalanche (Tyrol, Austria) resulted from failure of an intensely deformed carbonate rock mass on the southeast face of a 2,370-m-high mountain ridge. The initially sliding rock mass rapidly fragmented as it moved towards the floor of the Inn River valley. Part of the 200-250 x 106 m3 (Patzelt 2012) rock avalanche debris collided with and moved around an opposing bedrock ridge and flowed into the Ötz valley, reaching up to 6.3 km from source. Where the Tschirgant rock avalanche spread freely it formed longitudinal ridges aligned along motion direction as well as smaller hummocks. Encountering high topography, it left runup ridges, fallback patterns (i.e. secondary collapse), and compressional morphology (successively elevated, transverse ridges). Further evidence for the mechanical landslide behaviour is given by large volumes of mobilized valley-fill sediments (polymict gravels and sands). These sediments indicate both shearing and compressional faulting within the rock avalanche mass (forming their own morphological units through, e.g. in situ bulldozing or as distinctly different hummocky terrain), but also indicate extension of the spreading landslide mass (i.e. intercalated/injected gravels encountered mainly in morphological depressions between hummocks). Further influences on its morphology are given by the different lithological units. E.g. the transition from massive dolomite

  9. Investigations of single-electron avalanches in a proportional drift tube

    International Nuclear Information System (INIS)

    Anderson, W.S.; Armitage, J.C.; Chevreau, P.; Heinrich, J.G.; Lu, C.; McDonald, I.; McDonald, K.T.; Miller, B.; Secrest, D.; Weckel, J.

    1990-01-01

    Detailed information on single-electron drift and avalanche behavior has a basic interest in an investigation of gas-chamber performance. Its timing, avalanche distribution, attachment by the working gas mixtures, etc., provide various criteria for choosing the best suitable gas mixture under a specific experimental circumstance. Investigations of single-electron avalanches in a proportional drift tube have been carried out with a pulsed N 2 laser. The study consists of two aspects: timing properties, and fluctuations in the gas avalanche

  10. The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

    Science.gov (United States)

    Cochran, A. L.

    1984-01-01

    The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

  11. Development and verification of signal processing system of avalanche photo diode for the active shields onboard ASTRO-H

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, M., E-mail: ohno@hep01.hepl.hiroshima-u.ac.jp [Department of Physical Sciences, Hiroshima University, Hiroshima 739-8526 (Japan); Kawano, T.; Edahiro, I.; Shirakawa, H.; Ohashi, N.; Okada, C.; Habata, S.; Katsuta, J.; Tanaka, Y.; Takahashi, H.; Mizuno, T.; Fukazawa, Y. [Department of Physical Sciences, Hiroshima University, Hiroshima 739-8526 (Japan); Murakami, H.; Kobayashi, S.; Miyake, K.; Ono, K.; Kato, Y.; Furuta, Y.; Murota, Y.; Okuda, K. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); and others

    2016-09-21

    The hard X-ray Imager and Soft Gamma-ray Detector onboard ASTRO-H demonstrate high sensitivity to hard X-ray (5–80 keV) and soft gamma-rays (60–600 keV), respectively. To reduce the background, both instruments are actively shielded by large, thick Bismuth Germanate scintillators. We have developed the signal processing system of the avalanche photodiode in the BGO active shields and have demonstrated its effectiveness after assembly in the flight model of the HXI/SGD sensor and after integration into the satellite. The energy threshold achieved is about 150 keV and anti-coincidence efficiency for cosmic-ray events is almost 100%. Installed in the BGO active shield, the developed signal processing system successfully reduces the room background level of the main detector. - Highlights: • A detail of development of signal processing system for ASTRO-H is presented. • Digital filer with FPGA instead of discrete analog circuit is applied. • Expected performance is verified after integration of the satellite.

  12. Terrain Classification of Norwegian Slab Avalanche Accidents

    Science.gov (United States)

    Hallandvik, Linda; Aadland, Eivind; Vikene, Odd Lennart

    2016-01-01

    It is difficult to rely on snow conditions, weather, and human factors when making judgments about avalanche risk because these variables are dynamic and complex; terrain, however, is more easily observed and interpreted. Therefore, this study aimed to investigate (1) the type of terrain in which historical fatal snow avalanche accidents in Norway…

  13. Improved HgCdTe detectors with novel antireflection coating

    Science.gov (United States)

    Babu, Sachi R.; Hu, Kelley; Manthripragada, Sridhar; Martineau, Robert J.; Kotecki, C. A.; Peters, F. A.; Burgess, A. S.; Krebs, Danny J.; Mott, David B.; Ewin, Audrey J.; Miles, A.; Nguyen, Trang L.; Shu, Peter K.

    1996-10-01

    The composite infrared spctrometer (CIRS) is an important instrument for the upcoming Cassini mission for sensing infrared (IR) radiation from the Saturanian planetary system. We have delivered a linear, ten element, mercury cadmium telluride (HgCdTe) photoconductive detector array for use on focal plane 3 (FP3), which is responsible for detecting radiation from the 9.1 micrometer to 16.6 micrometer wavelength range. Reliable HgCdTe detectors require robust passivation, a low-stress zinc sulfide (ZnS) anti-reflection (AR) coating with good adhesion, and a proper optical cavity design to smooth out the resonance in the detector spectral response. During the development of CIRS flight array, we have demonstrated the potential of using an in-situ interfacial layer, such as SiN(subscript x), between ZnS and the anodic oxide. Such an interfacial layer drastically improves the adhesion between the ZnS and oxide, without degrading the minority carrier lifetime. We have also demonstrated the feasibility of applying a SiN(subscript x) 'rain coat' layer over the ZnS to prevent moisture and other chemicals from attacking the AR coating, thus improving the long term reliability. This also enables device operation in a hazardous environment. The alumina/epoxy/HgCdTe/oxide/ZnS structure is a complicated multi-cavity optical system. We have developed an extensive device simulation, which enables us to make the optimal choice of individual cavity thickness for minimizing the resonance and maximizing the quantum efficiency. We have also used 0.05 micrometer alumina powder loaded epoxy to minimize the reflections at the epoxy/HgCdTe interface, thus minimizing the resonance.

  14. Low-energy X-ray and gamma spectrometry using silicon photodiodes

    International Nuclear Information System (INIS)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm 2 and 0,25 cm 2 , thickness of the depletion ranging from 100 to 200 μm and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were 241 Am, 109 Cd, 57 Co and 133 Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  15. Discrimination capability of avalanche counters detecting different ionizing particles

    International Nuclear Information System (INIS)

    Prete, G.; Viesti, G.; Padua Univ.

    1985-01-01

    The discrimination capability of avalanche counters to detect different ionizing particles has been studied using a 252 Cf source. Pulse height, pulse-height resolution and timing properties have been measured as a function of the reduced applied voltage for parallel-plate and parallel-grid avalanche counters. At the highest applied voltages, space charge effects shift the pulse-height signal of the avalanche counter away from being linearly proportional to the stopping power of the detected particles and cause the pulse-height resolution to deteriorate. To optimize the avalanche counter capability, without loss of time resolution, it appears better to operate the detector at voltages well below the breakdown threshold. Measurements with 32 S ions are also reported. (orig.)

  16. Statistical evaluation of waveform collapse reveals scale-free properties of neuronal avalanches

    Directory of Open Access Journals (Sweden)

    Aleena eShaukat

    2016-04-01

    Full Text Available Neural avalanches are a prominent form of brain activity characterized by network-wide bursts whose statistics follow a power-law distribution with a slope near 3/2. Recent work suggests that avalanches of different durations can be rescaled and thus collapsed together. This collapse mirrors work in statistical physics where it is proposed to form a signature of systems evolving in a critical state. However, no rigorous statistical test has been proposed to examine the degree to which neuronal avalanches collapse together. Here, we describe a statistical test based on functional data analysis, where raw avalanches are first smoothed with a Fourier basis, then rescaled using a time-warping function. Finally, an F ratio test combined with a bootstrap permutation is employed to determine if avalanches collapse together in a statistically reliable fashion. To illustrate this approach, we recorded avalanches from cortical cultures on multielectrode arrays as in previous work. Analyses show that avalanches of various durations can be collapsed together in a statistically robust fashion. However, a principal components analysis revealed that the offset of avalanches resulted in marked variance in the time-warping function, thus arguing for limitations to the strict fractal nature of avalanche dynamics. We compared these results with those obtained from cultures treated with an AMPA/NMDA receptor antagonist (APV/DNQX, which yield a power-law of avalanche durations with a slope greater than 3/2. When collapsed together, these avalanches showed marked misalignments both at onset and offset time-points. In sum, the proposed statistical evaluation suggests the presence of scale-free avalanche waveforms and constitutes an avenue for examining critical dynamics in neuronal systems.

  17. Avalanche and streamer mode operation of resistive plate chambers

    International Nuclear Information System (INIS)

    Cardarelli, R.; Makeev, V.; Santonico, R.

    1996-01-01

    A resistive plate chamber was operated at voltages increasing in steps of 200 V over a 3 kV interval and the transition between the avalanche and streamer modes was studied. The avalanche amplitude was observed to be exponentially dependent on the operating voltage up to a value, characteristic of the gas, where the avalanche saturation occurs and delayed streamer signals start to appear. Signal waveforms, charge and timing distributions are reported. (orig.)

  18. Avalanche localization and its effects in proportional counters

    International Nuclear Information System (INIS)

    Fischer, J.; Okuno, H.; Walenta, A.H.

    1977-11-01

    Avalanche development around the anode wire in a gas proportional counter is investigated. In the region of proportional gas amplification, the avalanche is found to be well localized on one side of the anode wire, where the electrons arrive along the field lines from the point of primary ionization. Induced signals on electrodes surrounding the anode wire are used to measure the azimuthal position of the avalanche on the anode wire. Practical applications of the phenomena such as left-right assignment in drift chambers and measurement of the angular direction of the primary ionization electrons drifting towards the anode wire are discussed

  19. Automated identification of potential snow avalanche release areas based on digital elevation models

    Directory of Open Access Journals (Sweden)

    Y. Bühler

    2013-05-01

    Full Text Available The identification of snow avalanche release areas is a very difficult task. The release mechanism of snow avalanches depends on many different terrain, meteorological, snowpack and triggering parameters and their interactions, which are very difficult to assess. In many alpine regions such as the Indian Himalaya, nearly no information on avalanche release areas exists mainly due to the very rough and poorly accessible terrain, the vast size of the region and the lack of avalanche records. However avalanche release information is urgently required for numerical simulation of avalanche events to plan mitigation measures, for hazard mapping and to secure important roads. The Rohtang tunnel access road near Manali, Himachal Pradesh, India, is such an example. By far the most reliable way to identify avalanche release areas is using historic avalanche records and field investigations accomplished by avalanche experts in the formation zones. But both methods are not feasible for this area due to the rough terrain, its vast extent and lack of time. Therefore, we develop an operational, easy-to-use automated potential release area (PRA detection tool in Python/ArcGIS which uses high spatial resolution digital elevation models (DEMs and forest cover information derived from airborne remote sensing instruments as input. Such instruments can acquire spatially continuous data even over inaccessible terrain and cover large areas. We validate our tool using a database of historic avalanches acquired over 56 yr in the neighborhood of Davos, Switzerland, and apply this method for the avalanche tracks along the Rohtang tunnel access road. This tool, used by avalanche experts, delivers valuable input to identify focus areas for more-detailed investigations on avalanche release areas in remote regions such as the Indian Himalaya and is a precondition for large-scale avalanche hazard mapping.

  20. Automated identification of potential snow avalanche release areas based on digital elevation models

    Science.gov (United States)

    Bühler, Y.; Kumar, S.; Veitinger, J.; Christen, M.; Stoffel, A.; Snehmani

    2013-05-01

    The identification of snow avalanche release areas is a very difficult task. The release mechanism of snow avalanches depends on many different terrain, meteorological, snowpack and triggering parameters and their interactions, which are very difficult to assess. In many alpine regions such as the Indian Himalaya, nearly no information on avalanche release areas exists mainly due to the very rough and poorly accessible terrain, the vast size of the region and the lack of avalanche records. However avalanche release information is urgently required for numerical simulation of avalanche events to plan mitigation measures, for hazard mapping and to secure important roads. The Rohtang tunnel access road near Manali, Himachal Pradesh, India, is such an example. By far the most reliable way to identify avalanche release areas is using historic avalanche records and field investigations accomplished by avalanche experts in the formation zones. But both methods are not feasible for this area due to the rough terrain, its vast extent and lack of time. Therefore, we develop an operational, easy-to-use automated potential release area (PRA) detection tool in Python/ArcGIS which uses high spatial resolution digital elevation models (DEMs) and forest cover information derived from airborne remote sensing instruments as input. Such instruments can acquire spatially continuous data even over inaccessible terrain and cover large areas. We validate our tool using a database of historic avalanches acquired over 56 yr in the neighborhood of Davos, Switzerland, and apply this method for the avalanche tracks along the Rohtang tunnel access road. This tool, used by avalanche experts, delivers valuable input to identify focus areas for more-detailed investigations on avalanche release areas in remote regions such as the Indian Himalaya and is a precondition for large-scale avalanche hazard mapping.

  1. Study of a pure CsI crystal readout by APD for Belle II end cap ECL upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y., E-mail: jin@hep.phys.s.u-tokyo.ac.jp [Department of Physics, the University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-0033 (Japan); Aihara, H. [Department of Physics, the University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-0033 (Japan); Borshchev, O.V. [Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences, Profsoyuznaya st. 70, Moscow 117393 (Russian Federation); Epifanov, D.A. [Department of Physics, the University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-0033 (Japan); Ponomarenko, S.A.; Surin, N.M. [Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences, Profsoyuznaya st. 70, Moscow 117393 (Russian Federation)

    2016-07-11

    A scintillation counter consisting of a pure CsI crystal and avalanche photodiodes (Hamamatsu APD S8664-55 and S8664-1010) has been studied for the upgrade of the end cap electromagnetic calorimeter of Belle II detector. An essential increase of the light output was achieved with wavelength shifters based on nanostructured organosilicon luminophores. - Highlights: • A scintillation counter consisting of a pure CsI crystal and avalanche photodiodes has been studied. • The equivalent noise charge and equivalent noise energy of the counter have been measured. • An essential increase of the light output was achieved with wavelength shifters.

  2. Avalanches near a solid insulator in nitrogen gas at atmospheric pressure

    International Nuclear Information System (INIS)

    Mahajan, S.M.; Sudarshan, T.S.; Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208)

    1989-01-01

    The pulsed Townsend (PT) technique was used to record the growth of avalanches near a solid insulator in nitrogen gas at 0.1 MPa. Several other nonconventional techniques for releasing initiatory electrons at the cathode are discussed. In this paper, experimental results of avalanches initiated by illuminating a fast (0.6-ns) nitrogen laser onto the cathode triple junction are presented. Data were recorded with plexiglas, Teflon, high-density polyethylene, low-density polyethylene, Delrin, etc. Effect of surface condition, variation of the distance between insulator surface and the avalanche initiation region, and the effect of a large number of previous avalanches on the avalanche characteristics at a particular voltage were studied. The Townsend primary ionization coefficient, hereafter referred to as growth coefficient (α), and drift velocity (V/sub e/) were evaluated through the PT technique. Results indicate that the avalanche growth in the vicinity of a solid insulator is less than that in an identical plain gas gap. Existence of a nonuniform field as a result of surface charges on the insulator and/or field modifications due to the avalanche space charge are believed to be responsible for this behavior

  3. Velocity distribution in snow avalanches

    Science.gov (United States)

    Nishimura, K.; Ito, Y.

    1997-12-01

    In order to investigate the detailed structure of snow avalanches, we have made snow flow experiments at the Miyanomori ski jump in Sapporo and systematic observations in the Shiai-dani, Kurobe Canyon. In the winter of 1995-1996, a new device to measure static pressures was used to estimate velocities in the snow cloud that develops above the flowing layer of avalanches. Measurements during a large avalanche in the Shiai-dani which damaged and destroyed some instruments indicate velocities increased rapidly to more than 50 m/s soon after the front. Velocities decreased gradually in the following 10 s. Velocities of the lower flowing layer were also calculated by differencing measurement of impact pressure. Both recordings in the snow cloud and in the flowing layer changed with a similar trend and suggest a close interaction between the two layers. In addition, the velocity showed a periodic change. Power spectrum analysis of the impact pressure and the static pressure depression showed a strong peak at a frequency between 4 and 6 Hz, which might imply the existence of either ordered structure or a series of surges in the flow.

  4. Evaluation of BPW-34 photodiode answer for 10 MeV electron dosimetry

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A.; Hazin, C.A.

    1992-01-01

    The viability of commercial photodiodes used for dosimetry of high energy electron beams was studied. The measures were made in a linear accelerators of 10 MeV, using the BPW-34 photodiode. The average energy of electrons on phantom surface and their average range were determined with the photodiode, and the results were compared with the obtained with a ionization chamber of parallel plate. (C.G.C.)

  5. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  6. Anthropogenic effect on avalanche and debris flow activity

    Directory of Open Access Journals (Sweden)

    S. A. Sokratov

    2013-01-01

    Full Text Available The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoidable changes of the natural environment as the result of a construction and of use of the constructed infrastructure to be account for in corresponding planning of the protection measures.

  7. Beyond Critical Exponents in Neuronal Avalanches

    Science.gov (United States)

    Friedman, Nir; Butler, Tom; Deville, Robert; Beggs, John; Dahmen, Karin

    2011-03-01

    Neurons form a complex network in the brain, where they interact with one another by firing electrical signals. Neurons firing can trigger other neurons to fire, potentially causing avalanches of activity in the network. In many cases these avalanches have been found to be scale independent, similar to critical phenomena in diverse systems such as magnets and earthquakes. We discuss models for neuronal activity that allow for the extraction of testable, statistical predictions. We compare these models to experimental results, and go beyond critical exponents.

  8. A novel approach to evaluate and compare computational snow avalanche simulation

    Directory of Open Access Journals (Sweden)

    J.-T. Fischer

    2013-06-01

    Full Text Available An innovative approach for the analysis and interpretation of snow avalanche simulation in three dimensional terrain is presented. Snow avalanche simulation software is used as a supporting tool in hazard mapping. When performing a high number of simulation runs the user is confronted with a considerable amount of simulation results. The objective of this work is to establish an objective, model independent framework to evaluate and compare results of different simulation approaches with respect to indicators of practical relevance, providing an answer to the important questions: how far and how destructive does an avalanche move down slope. For this purpose the Automated Indicator based Model Evaluation and Comparison (AIMEC method is introduced. It operates on a coordinate system which follows a given avalanche path. A multitude of simulation runs is performed with the snow avalanche simulation software SamosAT (Snow Avalanche MOdelling and Simulation – Advanced Technology. The variability of pressure-based run out and avalanche destructiveness along the path is investigated for multiple simulation runs, varying release volume and model parameters. With this, results of deterministic simulation software are processed and analysed by means of statistical methods. Uncertainties originating from varying input conditions, model parameters or the different model implementations are assessed. The results show that AIMEC contributes to the interpretation of avalanche simulations with a broad applicability in model evaluation, comparison as well as examination of scenario variations.

  9. Experimental method to predict avalanches based on neural networks

    Directory of Open Access Journals (Sweden)

    V. V. Zhdanov

    2016-01-01

    Full Text Available The article presents results of experimental use of currently available statistical methods to classify the avalanche‑dangerous precipitations and snowfalls in the Kishi Almaty river basin. The avalanche service of Kazakhstan uses graphical methods for prediction of avalanches developed by I.V. Kondrashov and E.I. Kolesnikov. The main objective of this work was to develop a modern model that could be used directly at the avalanche stations. Classification of winter precipitations into dangerous snowfalls and non‑dangerous ones was performed by two following ways: the linear discriminant function (canonical analysis and artificial neural networks. Observational data on weather and avalanches in the gorge Kishi Almaty in the gorge Kishi Almaty were used as a training sample. Coefficients for the canonical variables were calculated by the software «Statistica» (Russian version 6.0, and then the necessary formula had been constructed. The accuracy of the above classification was 96%. Simulator by the authors L.N. Yasnitsky and F.М. Cherepanov was used to learn the neural networks. The trained neural network demonstrated 98% accuracy of the classification. Prepared statistical models are recommended to be tested at the snow‑avalanche stations. Results of the tests will be used for estimation of the model quality and its readiness for the operational work. In future, we plan to apply these models for classification of the avalanche danger by the five‑point international scale.

  10. Spike avalanches exhibit universal dynamics across the sleep-wake cycle.

    Directory of Open Access Journals (Sweden)

    Tiago L Ribeiro

    2010-11-01

    Full Text Available Scale-invariant neuronal avalanches have been observed in cell cultures and slices as well as anesthetized and awake brains, suggesting that the brain operates near criticality, i.e. within a narrow margin between avalanche propagation and extinction. In theory, criticality provides many desirable features for the behaving brain, optimizing computational capabilities, information transmission, sensitivity to sensory stimuli and size of memory repertoires. However, a thorough characterization of neuronal avalanches in freely-behaving (FB animals is still missing, thus raising doubts about their relevance for brain function.To address this issue, we employed chronically implanted multielectrode arrays (MEA to record avalanches of action potentials (spikes from the cerebral cortex and hippocampus of 14 rats, as they spontaneously traversed the wake-sleep cycle, explored novel objects or were subjected to anesthesia (AN. We then modeled spike avalanches to evaluate the impact of sparse MEA sampling on their statistics. We found that the size distribution of spike avalanches are well fit by lognormal distributions in FB animals, and by truncated power laws in the AN group. FB data surrogation markedly decreases the tail of the distribution, i.e. spike shuffling destroys the largest avalanches. The FB data are also characterized by multiple key features compatible with criticality in the temporal domain, such as 1/f spectra and long-term correlations as measured by detrended fluctuation analysis. These signatures are very stable across waking, slow-wave sleep and rapid-eye-movement sleep, but collapse during anesthesia. Likewise, waiting time distributions obey a single scaling function during all natural behavioral states, but not during anesthesia. Results are equivalent for neuronal ensembles recorded from visual and tactile areas of the cerebral cortex, as well as the hippocampus.Altogether, the data provide a comprehensive link between behavior

  11. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  12. On the use of single large-area photodiodes in scintillation counters

    International Nuclear Information System (INIS)

    Morrell, C.

    1989-12-01

    The compilation of this review was originally intended to assess the possibility of using photodiode-based scintillation counters in fluorescence EXAFS (or FLEXAFS) systems as a low-cost alternative to photomultiplier-based counters. The X-ray energies encountered in FLEXAFS experiments range from a few keV to a few tens of keV, and detectors are required to have some energy resolution and/or high count-rate capability in order to optimize the quality of data collected. The results presented in the reviewed literature imply strongly that photodiodes do not compete successfully with photomultipliers in scintillation counting systems for X-ray energies below the order of 100keV, at least at the present stage of photodiode technology. Nevertheless it is likely that there are other applications requiring X-ray detectors for which a photodiode-based scintillation counter may be perfectly adequate, and it is therefore felt that such a review is still useful. In addition, large-area single photodiodes have much to offer as X-ray detectors in their own right, and several of the considerations regarding their use in scintillation counters are highly relevant to this application. (author)

  13. Evaluation of gamma dose effect on PIN photodiode using analytical model

    Science.gov (United States)

    Jafari, H.; Feghhi, S. A. H.; Boorboor, S.

    2018-03-01

    The PIN silicon photodiodes are widely used in the applications which may be found in radiation environment such as space mission, medical imaging and non-destructive testing. Radiation-induced damage in these devices causes to degrade the photodiode parameters. In this work, we have used new approach to evaluate gamma dose effects on a commercial PIN photodiode (BPX65) based on an analytical model. In this approach, the NIEL parameter has been calculated for gamma rays from a 60Co source by GEANT4. The radiation damage mechanisms have been considered by solving numerically the Poisson and continuity equations with the appropriate boundary conditions, parameters and physical models. Defects caused by radiation in silicon have been formulated in terms of the damage coefficient for the minority carriers' lifetime. The gamma induced degradation parameters of the silicon PIN photodiode have been analyzed in detail and the results were compared with experimental measurements and as well as the results of ATLAS semiconductor simulator to verify and parameterize the analytical model calculations. The results showed reasonable agreement between them for BPX65 silicon photodiode irradiated by 60Co gamma source at total doses up to 5 kGy under different reverse voltages.

  14. Amplifiers dedicated for large area SiC photodiodes

    Science.gov (United States)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  15. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    Science.gov (United States)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  16. Are dragon-king neuronal avalanches dungeons for self-organized brain activity?

    Science.gov (United States)

    de Arcangelis, L.

    2012-05-01

    Recent experiments have detected a novel form of spontaneous neuronal activity both in vitro and in vivo: neuronal avalanches. The statistical properties of this activity are typical of critical phenomena, with power laws characterizing the distributions of avalanche size and duration. A critical behaviour for the spontaneous brain activity has important consequences on stimulated activity and learning. Very interestingly, these statistical properties can be altered in significant ways in epilepsy and by pharmacological manipulations. In particular, there can be an increase in the number of large events anticipated by the power law, referred to herein as dragon-king avalanches. This behaviour, as verified by numerical models, can originate from a number of different mechanisms. For instance, it is observed experimentally that the emergence of a critical behaviour depends on the subtle balance between excitatory and inhibitory mechanisms acting in the system. Perturbing this balance, by increasing either synaptic excitation or the incidence of depolarized neuronal up-states causes frequent dragon-king avalanches. Conversely, an unbalanced GABAergic inhibition or long periods of low activity in the network give rise to sub-critical behaviour. Moreover, the existence of power laws, common to other stochastic processes, like earthquakes or solar flares, suggests that correlations are relevant in these phenomena. The dragon-king avalanches may then also be the expression of pathological correlations leading to frequent avalanches encompassing all neurons. We will review the statistics of neuronal avalanches in experimental systems. We then present numerical simulations of a neuronal network model introducing within the self-organized criticality framework ingredients from the physiology of real neurons, as the refractory period, synaptic plasticity and inhibitory synapses. The avalanche critical behaviour and the role of dragon-king avalanches will be discussed in

  17. Advances in gas avalanche photomultipliers

    CERN Document Server

    Breskin, Amos; Buzulutskov, A F; Chechik, R; Garty, E; Shefer, G; Singh, B K

    2000-01-01

    Gas avalanche detectors, combining solid photocathodes with fast electron multipliers, provide an attractive solution for photon localization over very large sensitive areas and under high illumination flux. They offer single-photon sensitivity and the possibility of operation under very intense magnetic fields. We discuss the principal factors governing the operation of gas avalanche photomultipliers. We summarize the recent progress made in alkali-halide and CVD-diamond UV-photocathodes, capable of operation under gas multiplication, and novel thin-film protected alkali-antimonide photocathodes, providing, for the first time, the possibility of operating gas photomultipliers in the visible range. Electron multipliers, adequate for these photon detectors, are proposed and some applications are briefly discussed.

  18. Catastrophic avalanches and methods of their control

    Directory of Open Access Journals (Sweden)

    N. A. Volodicheva

    2014-01-01

    Full Text Available Definition of such phenomenon as “catastrophic avalanche” is presented in this arti-cle. Several situations with releases of catastrophic avalanches in mountains of Caucasus, Alps, and Central Asia are investigated. Materials of snow-avalanche ob-servations performed since 1960s at the Elbrus station of the Lomonosov Moscow State University (Central Caucasus were used for this work. Complex-valued measures of engineering protection demonstrating different efficiencies are consid-ered.

  19. Design and characterization of single photon avalanche diodes arrays

    Science.gov (United States)

    Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

    2010-05-01

    During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

  20. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  1. Relation of the runaway avalanche threshold to momentum space topology

    Science.gov (United States)

    McDevitt, Christopher J.; Guo, Zehua; Tang, Xian-Zhu

    2018-02-01

    The underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accurately described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.

  2. Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to 14 microns. However, due to the cooling...

  3. Active Pixel HgCdTe Detectors With Built-in Dark Current Reduction for Near-Room Temperature Operation, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High sensitivity HgCdTe infrared arrays operating at 77K can now be tailored in a wide range of wavelengths from 1 to14 um. However, the cooling requirements make...

  4. Magnetic avalanches in manganese-acetate, "magnetic deflagration"

    Science.gov (United States)

    Suzuki, Yoko

    Mn12-acetate, first synthesized in 1980 by Lis, is one example of a class of many molecules called single molecule magnets (SMMs) or molecular nanomagnets. These molecules have several atomic spins strongly coupled together within each molecule. They exhibit interesting quantum mechanical phenomena at low temperatures such as quantum tunneling of magnetization, which was first found with Mn12-acetate in 1996 by Friedman, et al. , and Berry phase oscillations which were measured in Fe8 (another SMM) in 1999 by Wernsdorfer, et al. In addition to possible application as memory storage and qubits for quantum computers, these systems provide the means for studies of mesoscopic physics as well as the interactions of the molecules with their environment, such as phonon, photon, nuclear spin, intermolecular dipole, and exchange interactions. Mn12-acetate has twelve Mn ions magnetically coupled in the center of the molecule yielding a giant spin of S = 10 at low temperature. It also has a large uniaxial anisotropy of 65 K. Below 3 K, magnetization curves show strong hysteresis due to the anisotropy barrier. At thesis temperatures, the spin relaxes through the barrier by quantum tunneling of magnetization, which produces regularly-spaced multiple resonant steps in the hysteresis curve. Magnetic avalanches, first detected by Paulsen et al., also occur for some samples only at low temperature, leading to a very fast single-step reversal of the full magnetization, which clearly differs from relaxation by tunneling. In this thesis, I present the results of detailed experimental studies of two aspects of magnetic avalanche phenomenon: "conditions for the triggering of avalanches" and "propagation of the avalanche front". In the first study, we find the magnetic fields at which avalanches occur are stochastically distributed in a particular range of fields. For the second study, we conducted local time-resolved measurements. The results indicate the magnetization avalanches spread

  5. The photodiode of UV-range on the basis of ZnSe

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2010-03-01

    Full Text Available The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O–Іn are conducted and it is shown, that they can be applied in devices for radiometry and dissymmetry UV radiations in the ranges UVA, UVB and UVC. Comparison of parameters of developed UV photodiodes based on ZnSe with analogues showed that small capacitance and low value of dark current is their substantial difference of other ones.

  6. La Carte de Localisation Probable des Avalanches (CPLA

    Directory of Open Access Journals (Sweden)

    Gilles BORREL

    1994-12-01

    Full Text Available La Carte de Localisation Probable des Avalanches (CPLA indique l’enveloppe des limites extrêmes connues atteintes par les avalanches, ainsi que les travaux de protection associés. Il s’agit d’un document informatif et non d’une carte de risque. Depuis 1990, les données thématiques sont numérisées.

  7. Phase avalanches in near-adiabatic evolutions

    International Nuclear Information System (INIS)

    Vertesi, T.; Englman, R.

    2006-01-01

    In the course of slow, nearly adiabatic motion of a system, relative changes in the slowness can cause abrupt and high magnitude phase changes, ''phase avalanches,'' superimposed on the ordinary geometric phases. The generality of this effect is examined for arbitrary Hamiltonians and multicomponent (>2) wave packets and is found to be connected (through the Blaschke term in the theory of analytic signals) to amplitude zeros in the lower half of the complex time plane. Motion on a nonmaximal circle on the Poincare-sphere suppresses the effect. A spectroscopic transition experiment can independently verify the phase-avalanche magnitudes

  8. Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology

    NARCIS (Netherlands)

    Radovanovic, S.; Annema, Anne J.; Nauta, Bram

    2003-01-01

    The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. The

  9. IFKIS - a basis for managing avalanche risk in settlements and on roads in Switzerland

    Directory of Open Access Journals (Sweden)

    M. Bründl

    2004-01-01

    Full Text Available After the avalanche winter of 1999 in Switzerland, which caused 17 deaths and damage of over CHF 600 mill. in buildings and on roads, the project IFKIS, aimed at improving the basics of organizational measures (closure of roads, evacuation etc. in avalanche risk management, was initiated. The three main parts of the project were the development of a compulsory checklist for avalanche safety services, a modular education and training course program and an information system for safety services. The information system was developed in order to improve both the information flux between the national centre for avalanche forecasting, the Swiss Federal Institute for Snow and Avalanche Research SLF, and the local safety services on the one hand and the communication between avalanche safety services in the communities on the other hand. The results of this project make a valuable contribution to strengthening organizational measures in avalanche risk management and to closing the gaps, which became apparent during the avalanche winter of 1999. They are not restricted to snow avalanches but can also be adapted for dealing with other natural hazard processes and catastrophes.

  10. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal; Fitzpatrick, Nathaniel N.; Mohammad, Mohammad Ali; Evoy, S.; Cui, Bo

    2011-01-01

    photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume

  11. Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy

    International Nuclear Information System (INIS)

    Lao, Yan-Feng; Unil Perera, A. G.; Wijewarnasuriya, Priyalal S.

    2014-01-01

    We report a study of internal photoemission spectroscopy (IPE) applied to a n-type Hg 1−x Cd x Te/Hg 1−y Cd y Te heterojunction. An exponential line-shape of the absorption tail in HgCdTe is identified by IPE fittings of the near-threshold quantum yield spectra. The reduction of quantum yield (at higher photon energy) below the fitting value is explained as a result of carrier-phonon scatterings. In addition, the obtained bias independence of the IPE threshold indicates a negligible electron barrier at the heterojunction interface

  12. Post-glacial rock avalanches in the Obersee Valley, Glarner Alps, Switzerland

    Science.gov (United States)

    Nagelisen, Jan; Moore, Jeffrey R.; Vockenhuber, Christoph; Ivy-Ochs, Susan

    2015-06-01

    The geological record of prehistoric rock avalanches provides invaluable data for assessing the hazard posed by these rare but destructive mass movements. Here we investigate two large rock avalanches in the Obersee valley of the Glarner Alps, Switzerland, providing detailed mapping of landslide and related Quaternary phenomena, revised volume estimates for each event, and surface exposure dating of rock avalanche deposits. The Rautispitz rock avalanche originated from the southern flank of the Obersee valley, releasing approximately 91 million m3 of limestone on steeply-dipping bedding planes. Debris had maximum horizontal travel distance of ~ 5000 m, a fahrboeschung angle (relating fall height to length) of 18°, and was responsible for the creation of Lake Obersee; deposits are more than 130 m thick in places. The Platten rock avalanche encompassed a source volume of 11 million m3 sliding from the northern flank of the Obersee valley on similar steeply-dipping limestone beds (bedrock forms a syncline under the valley). Debris had a maximum horizontal travel distance of 1600 m with a fahrboeschung angle of 21°, and is more than 80 m thick in places. Deposits of the Platten rock avalanche are superposed atop those from the Rautispitz event at the end of the Obersee valley where they dam Lake Haslensee. Runout for both events was simulated using the dynamic analysis code DAN3D; results showed excellent match to mapped deposit extents and thickness and helped confirm the hypothesized single-event failure scenarios. 36Cl cosmogenic nuclide surface exposure dating of 13 deposited boulders revealed a Younger Dryas age of 12.6 ± 1.0 ka for the Rautispitz rock avalanche and a mid-Holocene age of 6.1 ± 0.8 ka for the Platten rock avalanche. A seismological trigger is proposed for the former event due to potentially correlated turbidite deposits in nearby Lake Zurich.

  13. Pentacene-based photodiode with Schottky junction

    International Nuclear Information System (INIS)

    Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

    2004-01-01

    We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

  14. New method for determining avalanche breakdown voltage of silicon photomultipliers

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.

    2017-01-01

    The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

  15. Forecasting of wet snow avalanche activity: Proof of concept and operational implementation

    Science.gov (United States)

    Gobiet, Andreas; Jöbstl, Lisa; Rieder, Hannes; Bellaire, Sascha; Mitterer, Christoph

    2017-04-01

    State-of-the-art tools for the operational assessment of avalanche danger include field observations, recordings from automatic weather stations, meteorological analyses and forecasts, and recently also indices derived from snowpack models. In particular, an index for identifying the onset of wet-snow avalanche cycles (LWCindex), has been demonstrated to be useful. However, its value for operational avalanche forecasting is currently limited, since detailed, physically based snowpack models are usually driven by meteorological data from automatic weather stations only and have therefore no prognostic ability. Since avalanche risk management heavily relies on timely information and early warnings, many avalanche services in Europe nowadays start issuing forecasts for the following days, instead of the traditional assessment of the current avalanche danger. In this context, the prognostic operation of detailed snowpack models has recently been objective of extensive research. In this study a new, observationally constrained setup for forecasting the onset of wet-snow avalanche cycles with the detailed snow cover model SNOWPACK is presented and evaluated. Based on data from weather stations and different numerical weather prediction models, we demonstrate that forecasts of the LWCindex as indicator for wet-snow avalanche cycles can be useful for operational warning services, but is so far not reliable enough to be used as single warning tool without considering other factors. Therefore, further development currently focuses on the improvement of the forecasts by applying ensemble techniques and suitable post processing approaches to the output of numerical weather prediction models. In parallel, the prognostic meteo-snow model chain is operationally used by two regional avalanche warning services in Austria since winter 2016/2017 for the first time. Experiences from the first operational season and first results from current model developments will be reported.

  16. Application of statistical and dynamics models for snow avalanche hazard assessment in mountain regions of Russia

    Science.gov (United States)

    Turchaninova, A.

    2012-04-01

    The estimation of extreme avalanche runout distances, flow velocities, impact pressures and volumes is an essential part of snow engineering in mountain regions of Russia. It implies the avalanche hazard assessment and mapping. Russian guidelines accept the application of different avalanche models as well as approaches for the estimation of model input parameters. Consequently different teams of engineers in Russia apply various dynamics and statistical models for engineering practice. However it gives more freedom to avalanche practitioners and experts but causes lots of uncertainties in case of serious limitations of avalanche models. We discuss these problems by presenting the application results of different well known and widely used statistical (developed in Russia) and avalanche dynamics models for several avalanche test sites in the Khibini Mountains (The Kola Peninsula) and the Caucasus. The most accurate and well-documented data from different powder and wet, big rare and small frequent snow avalanche events is collected from 1960th till today in the Khibini Mountains by the Avalanche Safety Center of "Apatit". This data was digitized and is available for use and analysis. Then the detailed digital avalanche database (GIS) was created for the first time. It contains contours of observed avalanches (ESRI shapes, more than 50 years of observations), DEMs, remote sensing data, description of snow pits, photos etc. Thus, the Russian avalanche data is a unique source of information for understanding of an avalanche flow rheology and the future development and calibration of the avalanche dynamics models. GIS database was used to analyze model input parameters and to calibrate and verify avalanche models. Regarding extreme dynamic parameters the outputs using different models can differ significantly. This is unacceptable for the engineering purposes in case of the absence of the well-defined guidelines in Russia. The frequency curves for the runout distance

  17. High voltage short plus generation based on avalanche circuit

    International Nuclear Information System (INIS)

    Hu Yuanfeng; Yu Xiaoqi

    2006-01-01

    Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

  18. Electric field distribution and simulation of avalanche formation due ...

    Indian Academy of Sciences (India)

    Electric field distributions and their role in the formation of avalanche due to the passage of heavy ions in parallel grid avalanche type wire chamber detectors are evaluated using a Monte Carlo simulation. The relative merits and demerits of parallel and crossed wire grid configurations are studied. It is found that the crossed ...

  19. 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

    Science.gov (United States)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2018-02-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

  20. Properties of the photodiode PiN as neutron detector

    International Nuclear Information System (INIS)

    Adamiec, G.; Iniguez, M.P.; Lorente, A.; Gallego, E.; Voytchev, M.

    2005-01-01

    The photodiode can be used to measure the ambient dose equivalent for an Am-Be source, as well placed in a paraffin sphere with LiF 6 converter as nude with a PE converter. The ratio between the counting rate and the ambient dose equivalent is linear in the two cases. The sensitivity of the diode with the converter 6 LiF is evaluated to 8.4 shocks by micro sievert by square centimeter of active surface of diode. The photodiode with the PE converter has a sensitivity lower of 2.1 shocks by micro sievert by square centimeter (for the Am-Be source) of active surface of diode. About the disadvantages, the disadvantage of photodiode inside the paraffin sphere is its size and weight; the disadvantage of the diode with the PE converter is its sensitivity to the orientation of the neutron flux and the necessity to calibrate for the source type. (N.C.)

  1. A new web-based system to improve the monitoring of snow avalanche hazard in France

    Science.gov (United States)

    Bourova, Ekaterina; Maldonado, Eric; Leroy, Jean-Baptiste; Alouani, Rachid; Eckert, Nicolas; Bonnefoy-Demongeot, Mylene; Deschatres, Michael

    2016-05-01

    Snow avalanche data in the French Alps and Pyrenees have been recorded for more than 100 years in several databases. The increasing amount of observed data required a more integrative and automated service. Here we report the comprehensive web-based Snow Avalanche Information System newly developed to this end for three important data sets: an avalanche chronicle (Enquête Permanente sur les Avalanches, EPA), an avalanche map (Carte de Localisation des Phénomènes d'Avalanche, CLPA) and a compilation of hazard and vulnerability data recorded on selected paths endangering human settlements (Sites Habités Sensibles aux Avalanches, SSA). These data sets are now integrated into a common database, enabling full interoperability between all different types of snow avalanche records: digitized geographic data, avalanche descriptive parameters, eyewitness reports, photographs, hazard and risk levels, etc. The new information system is implemented through modular components using Java-based web technologies with Spring and Hibernate frameworks. It automates the manual data entry and improves the process of information collection and sharing, enhancing user experience and data quality, and offering new outlooks to explore and exploit the huge amount of snow avalanche data available for fundamental research and more applied risk assessment.

  2. Evaluation and operationalization of a novel forest detrainment modeling approach for computational snow avalanche simulation

    Science.gov (United States)

    Teich, M.; Feistl, T.; Fischer, J.; Bartelt, P.; Bebi, P.; Christen, M.; Grêt-Regamey, A.

    2013-12-01

    Two-dimensional avalanche simulation software operating in three-dimensional terrain are widely used for hazard zoning and engineering to predict runout distances and impact pressures of snow avalanche events. Mountain forests are an effective biological protection measure; however, the protective capacity of forests to decelerate or even to stop avalanches that start within forested areas or directly above the treeline is seldom considered in this context. In particular, runout distances of small- to medium-scale avalanches are strongly influenced by the structural conditions of forests in the avalanche path. This varying decelerating effect has rarely been addressed or implemented in avalanche simulation. We present an evaluation and operationalization of a novel forest detrainment modeling approach implemented in the avalanche simulation software RAMMS. The new approach accounts for the effect of forests in the avalanche path by detraining mass, which leads to a deceleration and runout shortening of avalanches. The extracted avalanche mass caught behind trees stops immediately and, therefore, is instantly subtracted from the flow and the momentum of the stopped mass is removed from the total momentum of the avalanche flow. This relationship is parameterized by the empirical detrainment coefficient K [Pa] which accounts for the braking power of different forest types per unit area. To define K dependent on specific forest characteristics, we simulated 40 well-documented small- to medium-scale avalanches which released in and ran through forests with varying K-values. Comparing two-dimensional simulation results with one-dimensional field observations for a high number of avalanche events and simulations manually is however time consuming and rather subjective. In order to process simulation results in a comprehensive and standardized way, we used a recently developed automatic evaluation and comparison method defining runout distances based on a pressure

  3. Multi-Layer Organic Squaraine-Based Photodiode for Indirect X-Ray Detection

    Science.gov (United States)

    Iacchetti, Antonio; Binda, Maddalena; Natali, Dario; Giussani, Mattia; Beverina, Luca; Fiorini, Carlo; Peloso, Roberta; Sampietro, Marco

    2012-10-01

    The paper presents an organic-based photodiode coupled to a CsI(Tl) scintillator to realize an X-ray detector. A suitable blend of an indolic squaraine derivative and of fullerene derivative has been used for the photodiode, thus allowing external quantum efficiency in excess of 10% at a wavelength of 570 nm, well matching the scintillator output spectrum. Thanks to the additional deposition of a 15 nm thin layer of a suitable low electron affinity polymer, carriers injection from the metal into the organic semiconductor has been suppressed, and dark current density as low as has been obtained, which is comparable to standard Si-based photodiodes. By using a collimated X-ray beam impinging onto the scintillator mounted over the photodiode we have been able to measure current variations in the order of 150 pA on a dark current floor of less than 50 pA when operating the X-ray tube in switching mode, thus proving the feasibility of indirect X-ray detection by means of organic semiconductors.

  4. A photodiode based on PbS nanocrystallites for FYTRONIX solar panel automatic tracking controller

    Science.gov (United States)

    Wageh, S.; Farooq, W. A.; Tataroğlu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.

    2017-12-01

    The structural, optical and photoelectrical properties of the fabricated Al/PbS/p-Si/Al photodiode based on PbS nanocrystallites were investigated. The PbS nanocrystallites were characterized by X-ray diffraction (XRD), UV-VIS-NIR, Infrared and Raman spectroscopy. The XRD diffraction peaks show that the prepared PbS nanostructure is in high crystalline state. Various electrical parameters of the prepared photodiode were analyzed from the electrical characteristics based on I-V and C-V-G. The photodiode has a high rectification ratio of 5.85×104 at dark and ±4 V. Moreover, The photocurrent results indicate a strong photovoltaic behavior. The frequency dependence of capacitance and conductance characteristics was attributed to depletion region behavior of the photodiode. The diode was used to control solar panel power automatic tracking controller in dual axis. The fabricated photodiode works as a photosensor to control Solar tracking systems.

  5. Rock avalanches clusters along the northern Chile coastal scarp

    Science.gov (United States)

    Crosta, G. B.; Hermanns, R. L.; Dehls, J.; Lari, S.; Sepulveda, S.

    2017-07-01

    Rock avalanche clusters can be relevant indicators of the evolution of specific regions. They can be used to define: the type and intensity of triggering events, their recurrence and potential probability of occurrence, the progressive damage of the rock mass, the mechanisms of transport and deposition, as well as the environmental conditions at the time of occurrence. This paper tackles these subjects by analyzing two main clusters of rock avalanches (each event between 0.6 and 30 Mm3), separated by few kilometers and located along the coastal scarp of Northern Chile, south of Iquique. It lies, hence, within a seismic area characterized by a long seismic gap that ended on April 1st, 2014 with a Mw 8.2 earthquake. The scar position, high along the coastal cliff, supports seismic triggering for these clusters. The deposits' relative positions are used to obtain the sequence of rock avalanching events for each cluster. The progressive decrease of volume in the sequence of rock avalanches forming each cluster fits well the theoretical models for successive slope failures. These sequences seem to agree with those derived by dating the deposits with ages spanning between 4 kyr and 60 kyr. An average uplift rate of 0.2 mm/yr in the last 40 kyr is estimated for the coastal plain giving a further constraint to the rock avalanche deposition considering the absence of reworking of the deposits. Volume estimates and datings allow the estimation of an erosion rate contribution of about 0.098-0.112 mm km- 2 yr- 1 which is well comparable to values presented in the literature for earthquake induced landslides. We have carried out numerical modeling in order to analyze the mobility of the rock avalanches and examine the environmental conditions that controlled the runout. In doing so, we have considered the sequence of individual rock avalanches within the specific clusters, thus including in the models the confining effect caused by the presence of previous deposits. Bingham

  6. Extended short wavelength infrared HgCdTe detectors on silicon substrates

    Science.gov (United States)

    Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

  7. Performance of Hg1-xCdxTe infrared focal plane array at elevated temperature

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2017-04-01

    The simulated optical and electrical performance of the infrared HgCdTe focal plane array (FPA) for elevated operation temperature is reported. The depleted absorber layer is explored for equilibrium mode of operation up to 160 K. A resonant cavity is created to improve photon-matter interaction and hence, reduces the required absorption volume. The volume of the active region of HgCdTe detector is reduced by 70% in this manner. Dark current density is decreased without compromising the quantum efficiency. The effect of the reduced band filling effect leading to higher absorption coefficient and more efficient utilization of incident flux is employed. High quantum efficiency is achieved in a thin compositionally graded n+/ν/π/p HgCdTe photo-diode. This architecture helps to minimize the requirement of charge handling capacity in the CMOS read-out integrated circuit (ROIC) as the operation temperature is increased. Quantum efficiency ˜30% or above is shown to be sufficient for Noise Equivalent Temperature Difference (NETD) less than 20 mK with the reported design.

  8. Using stereo satellite imagery to account for ablation, entrainment, and compaction in volume calculations for rock avalanches on Glaciers: Application to the 2016 Lamplugh Rock Avalanche in Glacier Bay National Park, Alaska

    Science.gov (United States)

    Bessette-Kirton, Erin; Coe, Jeffrey A.; Zhou, Wendy

    2018-01-01

    The use of preevent and postevent digital elevation models (DEMs) to estimate the volume of rock avalanches on glaciers is complicated by ablation of ice before and after the rock avalanche, scour of material during rock avalanche emplacement, and postevent ablation and compaction of the rock avalanche deposit. We present a model to account for these processes in volume estimates of rock avalanches on glaciers. We applied our model by calculating the volume of the 28 June 2016 Lamplugh rock avalanche in Glacier Bay National Park, Alaska. We derived preevent and postevent 2‐m resolution DEMs from WorldView satellite stereo imagery. Using data from DEM differencing, we reconstructed the rock avalanche and adjacent surfaces at the time of occurrence by accounting for elevation changes due to ablation and scour of the ice surface, and postevent deposit changes. We accounted for uncertainties in our DEMs through precise coregistration and an assessment of relative elevation accuracy in bedrock control areas. The rock avalanche initially displaced 51.7 ± 1.5 Mm3 of intact rock and then scoured and entrained 13.2 ± 2.2 Mm3 of snow and ice during emplacement. We calculated the total deposit volume to be 69.9 ± 7.9 Mm3. Volume estimates that did not account for topographic changes due to ablation, scour, and compaction underestimated the deposit volume by 31.0–46.8 Mm3. Our model provides an improved framework for estimating uncertainties affecting rock avalanche volume measurements in glacial environments. These improvements can contribute to advances in the understanding of rock avalanche hazards and dynamics.

  9. Experimental studies on using silicon photodiode as read-out component of CsI(Tl) crystal

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

    1996-01-01

    Experimental studies on using silicon photodiode as the read-out component of CsI(Tl) crystal are reported. The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias, shaping time, sensitive area of photodiode and the dimension of the crystal

  10. Intermittent flow under constant forcing: Acoustic emission from creep avalanches

    Science.gov (United States)

    Salje, Ekhard K. H.; Liu, Hanlong; Jin, Linsen; Jiang, Deyi; Xiao, Yang; Jiang, Xiang

    2018-01-01

    While avalanches in field driven ferroic systems (e.g., Barkhausen noise), domain switching of martensitic nanostructures, and the collapse of porous materials are well documented, creep avalanches (avalanches under constant forcing) were never observed. Collapse avalanches generate particularly large acoustic emission (AE) signals and were hence chosen to investigate crackling noise under creep conditions. Piezoelectric SiO2 has a strong piezoelectric response even at the nanoscale so that we chose weakly bound SiO2 spheres in natural sandstone as a representative for the study of avalanches under time-independent, constant force. We found highly non-stationary crackling noise with four activity periods, each with power law distributed AE emission. Only the period before the final collapse shows the mean field behavior (ɛ near 1.39), in agreement with previous dynamic measurements at a constant stress rate. All earlier event periods show collapse with larger exponents (ɛ = 1.65). The waiting time exponents are classic with τ near 2.2 and 1.32. Creep data generate power law mixing with "effective" exponents for the full dataset with combinations of mean field and non-mean field regimes. We find close agreement with the predicted time-dependent fiber bound simulations, including events and waiting time distributions. Båth's law holds under creep conditions.

  11. Stellar Winds and Dust Avalanches in the AU Mic Debris Disk

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, Eugene; Fung, Jeffrey, E-mail: echiang@astro.berkeley.edu, E-mail: jeffrey.fung@berkeley.edu [Department of Astronomy, University of California at Berkeley, Campbell Hall, Berkeley, CA 94720-3411 (United States)

    2017-10-10

    We explain the fast-moving, ripple-like features in the edge-on debris disk orbiting the young M dwarf AU Mic. The bright features are clouds of submicron dust repelled by the host star’s wind. The clouds are produced by avalanches: radial outflows of dust that gain exponentially more mass as they shatter background disk particles in collisional chain reactions. The avalanches are triggered from a region a few au across—the “avalanche zone”—located on AU Mic’s primary “birth” ring at a true distance of ∼35 au from the star but at a projected distance more than a factor of 10 smaller: the avalanche zone sits directly along the line of sight to the star, on the side of the ring nearest Earth, launching clouds that disk rotation sends wholly to the southeast, as observed. The avalanche zone marks where the primary ring intersects a secondary ring of debris left by the catastrophic disruption of a progenitor up to Varuna in size, less than tens of thousands of years ago. Only where the rings intersect are particle collisions sufficiently violent to spawn the submicron dust needed to seed the avalanches. We show that this picture works quantitatively, reproducing the masses, sizes, and velocities of the observed escaping clouds. The Lorentz force exerted by the wind’s magnetic field, whose polarity reverses periodically according to the stellar magnetic cycle, promises to explain the observed vertical undulations. The timescale between avalanches, about 10 yr, might be set by time variability of the wind mass loss rate or, more speculatively, by some self-regulating limit cycle.

  12. Time lapse photography as an approach to understanding glide avalanche activity

    Science.gov (United States)

    Hendrikx, Jordy; Peitzsch, Erich H.; Fagre, Daniel B.

    2012-01-01

    Avalanches resulting from glide cracks are notoriously difficult to forecast, but are a recurring problem for numerous avalanche forecasting programs. In some cases glide cracks are observed to open and then melt away in situ. In other cases, they open and then fail catastrophically as large, full-depth avalanches. Our understanding and management of these phenomena are currently limited. It is thought that an increase in the rate of snow gliding occurs prior to full-depth avalanche activity so frequent observation of glide crack movement can provide an index of instability. During spring 2011 in Glacier National Park, Montana, USA, we began an approach to track glide crack avalanche activity using a time-lapse camera focused on a southwest facing glide crack. This crack melted in-situ without failing as a glide avalanche, while other nearby glide cracks on north through southeast aspects failed. In spring 2012, a camera was aimed at a large and productive glide crack adjacent to the Going to the Sun Road. We captured three unique glide events in the field of view. Unfortunately, all of them either failed very quickly, or during periods of obscured view, so measurements of glide rate could not be obtained. However, we compared the hourly meteorological variables during the period of glide activity to the same variables prior to glide activity. The variables air temperature, relative humidity, air pressure, incoming and reflected long wave radiation, SWE, total precipitation, and snow depth were found to be statistically different for our cases examined. We propose that these are some of the potential precursors for glide avalanche activity, but do urge caution in their use, due to the simple approach and small data set size. It is hoped that by introducing a workable method to easily record glide crack movement, combined with ongoing analysis of the associated meteorological data, we will improve our understanding of when, or if, glide avalanche activity will ensue.

  13. Avalanches and plastic flow in crystal plasticity: an overview

    Science.gov (United States)

    Papanikolaou, Stefanos; Cui, Yinan; Ghoniem, Nasr

    2018-01-01

    Crystal plasticity is mediated through dislocations, which form knotted configurations in a complex energy landscape. Once they disentangle and move, they may also be impeded by permanent obstacles with finite energy barriers or frustrating long-range interactions. The outcome of such complexity is the emergence of dislocation avalanches as the basic mechanism of plastic flow in solids at the nanoscale. While the deformation behavior of bulk materials appears smooth, a predictive model should clearly be based upon the character of these dislocation avalanches and their associated strain bursts. We provide here a comprehensive overview of experimental observations, theoretical models and computational approaches that have been developed to unravel the multiple aspects of dislocation avalanche physics and the phenomena leading to strain bursts in crystal plasticity.

  14. La carte de localisation des phénomènes d'avalanche (CLPA : enjeux et perspectives The Localization Map of Avalanche Phenomena (CLPA in French: stakes and prospects

    Directory of Open Access Journals (Sweden)

    Mylène Bonnefoy, Gilles Borrel, Didier Richard, Laurent Bélanger et Mohamed Naaim

    2010-09-01

    Full Text Available Après presque quarante ans d’existence, la carte de localisation des phénomènes d'avalanche (CLPA constitue aujourd’hui un outil incontournable pour la prise en compte du risque d’avalanche dans l’aménagement et la gestion des territoires de montagne. Pour optimiser la sécurité des zones urbanisées, ce dispositif a su se rénover par une mise à jour régulière et étendue des données et l'étude de nouvelles zones, mais aussi par une meilleure diffusion auprès des opérationnels et du public concernés. Les auteurs nous rappellent ici l'évolution du fonctionnement de la CLPA et l'intérêt d'élargir la valorisation de ses données dans de nouveaux outils scientifiques.The Localization Map of Avalanche Phenomena (CLPA in French was created in 1971 as a response to the deadly avalanche occurred in Val d’Isère (February 1970, 39 persons killed. The aim is to inventory and to memorize areas where avalanches occurred in the past in order to keep in memory precisely greatest limits of those avalanches. The CLPA was rapidly considered as an essential element for developing plan in mountain areas. After the other catastrophic avalanche, which occurred in the Montroc Village (Chamonix in February 1999, it was recommended “the mutual valuation of the EPA and the CLPA integrated into an information system containing the information on avalanches and the information on the other natural risks in mountain”. The ministry in charge of environment decided therefore to continue and to modernize the CLPA, mission that was assigned to the Cemagref with the ONF collaboration. This modernization was based on the end of maps and testimonies records digitizing, on the compilation of summary notes concerning main avalanches information in reference to a mountain massif, on the institution of a durable updating of the map and on the possibility of having all information on line on the website www.avalanches.fr. Information recorded in the

  15. Comparison of Measured Dark Current Distributions with Calculated Damage Energy Distributions in HgCdTe

    Science.gov (United States)

    Marshall, C. J.; Marshall, P. W.; Howe, C. L.; Reed, R. A.; Weller, R. A.; Mendenhall, M.; Waczynski, A.; Ladbury, R.; Jordan, T. M.

    2007-01-01

    This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

  16. Reliability studies on Si PIN photodiodes under Co-60 gamma radiation

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y. P. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India) and Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Praveen, K. C.; Gnana Prakash, A. P. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Rani, Y. Rejeena [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India)

    2013-02-05

    Silicon PIN photodiodes were fabricated with 250 nm SiO{sub 2} antireflective coating (ARC). The changes in the electrical characteristics, capacitance-voltage characteristics and spectral response after gamma irradiation are systematically studied to estimate the radiation tolerance up to 10 Mrad. The different characteristics studied in this investigation demonstrate that Si PIN photodiodes are suitable for high radiation environment.

  17. THEORY AND PRACTICE OF INDIVIDUAL SNOW AVALANCHE RISK ASSESSMENT IN THE RUSSIAN ARCTIC

    Directory of Open Access Journals (Sweden)

    Aleksandr Shnyparkov

    2012-01-01

    Full Text Available In recent years, the Government of the Russian Federation considerably increased attention to the exploitation of the Russian Arctic territories. Simultaneously, the evaluation of snow avalanches danger was enhanced with the aim to decrease fatalities and reduce economic losses. However, it turned out that solely reporting the degree of avalanche danger is not sufficient. Instead, quantitative information on probabilistic parameters of natural hazards, the characteristics of their effects on the environment and possibly resulting losses is increasingly needed. Such information allows for the estimation of risk, including risk related to snow avalanches. Here, snow avalanche risk is quantified for the Khibiny Mountains, one of the most industrialized parts of the Russian Arctic: Major parts of the territory have an acceptable degree of individual snow avalanche risk (<1×10-6. The territories with an admissible (10-4–10-6 or unacceptable (>1×10-4 degree of individual snow avalanche risk (0.5 and 2% of the total area correspond to the Southeast of the Khibiny Mountains where settlements and mining industries are situated. Moreover, due to an increase in winter tourism, some traffic infrastructure is located in valleys with an admissible or unacceptable degree of individual snow avalanches risk.

  18. Miniature probe with semiconductor photodiode for measuring dose rates in radiotherapy

    International Nuclear Information System (INIS)

    Burian, A.

    1991-01-01

    The probe is designed for gaining information on the magnitude and spatial distribution of the dose which will be absorbed by the patient's body during radiotherapy. The probe satisfies requirements of high-level miniaturization and requirements on the shape and tissue-equivalence of the casing, as well as on efficient electromagnetic shielding. It is fitted with a miniature photodiode. Conductive carbon cement was used for attaching contacts to the photodiode. Efficient electromagnetic shielding was achieved by means of a carbon-based conductive layer. The photodiode casing was made from a mixture of organic materials whose biogenic elements approximate the standard soft human tissue. The geometry of the casing is adapted to the particular field of application of the probe. (Z.S). 2 figs

  19. High pressure pulsed avalanche discharges: Scaling of required preionization rate for homogeneity

    International Nuclear Information System (INIS)

    Brenning, N.; Axnaes, I.; Nilsson, J.O.; Eninger, J.E.

    1994-01-01

    Homogeneous high-pressure discharges can be formed by pulsed avalanche breakdown, provided that the individual avalanche heads have diffused to a large enough radius to overlap before streamer breakdown occurs. The overlap condition can be met by using an external mechanism to preionize the neutral gas, e.g., x-rays or uv radiation. There are several scenarios, (1) to preionize the gas, and then trigger the discharge by the sudden application of an electric field, (2) to apply an overvoltage over the discharge and trigger the discharge by external ionization, or (3) to have a continuous rate of external ionization and let the E field rise, with a comparatively long time constant τ, across the breakdown value (E/n) 0 . The authors here study the last of these scenarios, which gives a very efficient use of the preionization source because the avalanche startpoint can accumulate during the pre-avalanche phase. The authors have found that the required avalanche startpoint density N st.p , defined as the density of individual single, or clusters of, electrons at the time when the electric field crosses the breakdown value, scales with pressure and rise time as N st.p ∝ p 21/4 τ -3/4 . This pressure scaling disagrees with the p 3/2 scaling found by Levatter and Lin (J. Appl. Phys. 51(1), 210), while the rise time scaling agrees satisfactorily with their results. For an E field which rises slowly across the breakdown value, the pre-avalanche accumulation of electrons must be taken into account, as well as the fact that the density n e of free electrons becomes larger than the density N st.p of independent avalanche heads: when electron impact ionization closely balances attachment, individual electrons are replaced by clusters of electrons which are too close to form individual avalanche heads

  20. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  1. Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

    2014-04-15

    In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

  2. Massless Dirac fermions in semimetal HgCdTe

    Science.gov (United States)

    Marchewka, M.; Grendysa, J.; Żak, D.; Tomaka, G.; Śliż, P.; Sheregii, E. M.

    2017-01-01

    Magneto-transport results obtained for the strained 100 nm thick Hg1-x CdxTe (x=0.135) layer grown by MBE on the CdTe/GaAs substrate are interpreted by the 8×8 kp model with the in-plane tensile strain. The dispersion relation for the investigated structure proves that the Dirac point is located in the gap caused by the strain. It is also shown that the fan of the Landau Levels (LL's) energy calculated for topological protected surface states for the studied HgCdTe alloy corresponds to the fan of the LL's calculated using the graphen-like Hamiltonian which gives excellent agreement with the experimental data for velocity on the Fermi level equal to vf ≈ 0.85×106 m/s. That characterized strained Hg1-x CdxTe layers (0.13 < x < 0.14) are a perfect Topological Insulator with good perspectives of further applications.

  3. Change of energy dependence for X-rays of photodiode detector

    International Nuclear Information System (INIS)

    Silva, M.F. da; Freitas, L.C. de

    1992-01-01

    The energy dependence of photodiode Siemens SFH-206 for X-rays beams of 24 kV to 50 kV was studied and compared with the ionization chamber of parallel plates. The photodiode presented 450% of maxim change response for the energy band studied. A study was made, using aluminium, acrylic, mylar aluminized and mylar graphitized filters and showed that the two last reduce this maxim change response to 101% and 108%, respectively. (C.G.C.)

  4. Stretched exponentials and power laws in granular avalanching

    Science.gov (United States)

    Head, D. A.; Rodgers, G. J.

    1999-02-01

    We introduce a model for granular surface flow which exhibits both stretched exponential and power law avalanching over its parameter range. Two modes of transport are incorporated, a rolling layer consisting of individual particles and the overdamped, sliding motion of particle clusters. The crossover in behaviour observed in experiments on piles of rice is attributed to a change in the dominant mode of transport. We predict that power law avalanching will be observed whenever surface flow is dominated by clustered motion.

  5. Regional snow-avalanche detection using object-based image analysis of near-infrared aerial imagery

    Directory of Open Access Journals (Sweden)

    K. Korzeniowska

    2017-10-01

    Full Text Available Snow avalanches are destructive mass movements in mountain regions that continue to claim lives and cause infrastructural damage and traffic detours. Given that avalanches often occur in remote and poorly accessible steep terrain, their detection and mapping is extensive and time consuming. Nonetheless, systematic avalanche detection over large areas could help to generate more complete and up-to-date inventories (cadastres necessary for validating avalanche forecasting and hazard mapping. In this study, we focused on automatically detecting avalanches and classifying them into release zones, tracks, and run-out zones based on 0.25 m near-infrared (NIR ADS80-SH92 aerial imagery using an object-based image analysis (OBIA approach. Our algorithm takes into account the brightness, the normalised difference vegetation index (NDVI, the normalised difference water index (NDWI, and its standard deviation (SDNDWI to distinguish avalanches from other land-surface elements. Using normalised parameters allows applying this method across large areas. We trained the method by analysing the properties of snow avalanches at three 4 km−2 areas near Davos, Switzerland. We compared the results with manually mapped avalanche polygons and obtained a user's accuracy of > 0.9 and a Cohen's kappa of 0.79–0.85. Testing the method for a larger area of 226.3 km−2, we estimated producer's and user's accuracies of 0.61 and 0.78, respectively, with a Cohen's kappa of 0.67. Detected avalanches that overlapped with reference data by > 80 % occurred randomly throughout the testing area, showing that our method avoids overfitting. Our method has potential for large-scale avalanche mapping, although further investigations into other regions are desirable to verify the robustness of our selected thresholds and the transferability of the method.

  6. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron

  7. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-01-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  8. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  9. Emplacement of rock avalanche material across saturated sediments, Southern Alp, New Zealand

    Science.gov (United States)

    Dufresne, A.; Davies, T. R.; McSaveney, M. J.

    2012-04-01

    The spreading of material from slope failure events is not only influenced by the volume and nature of the source material and the local topography, but also by the materials encountered in the runout path. In this study, evidence of complex interactions between rock avalanche and sedimentary runout path material were investigated at the 45 x 106 m3 long-runout (L: 4.8 km) Round Top rock avalanche deposit, New Zealand. It was sourced within myolinitic schists of the active strike-slip Alpine Fault. The narrow and in-failure-direction elongate source scarp is deep-seated, indicating slope failure was triggered by strong seismic activity. The most striking morphological deposit features are longitudinal ridges aligned radially to source. Trenching and geophysical surveys show bulldozed and sheared substrate material at ridge termini and laterally displaced sedimentary strata. The substrate failed at a minimum depth of 3 m indicating a ploughing motion of the ridges into the saturated material below. Internal avalanche compression features suggest deceleration behind the bulldozed substrate obstacle. Contorted fabric in material ahead of the ridge document substrate disruption by the overriding avalanche material deposited as the next down-motion hummock. Comparison with rock avalanches of similar volume but different emplacement environments places Round Top between longer runout avalanches emplaced over e.g. playa lake sediments and those with shorter travel distances, whose runout was apparently retarded by topographic obstacles or that entrained high-friction debris. These empirical observations indicate the importance of runout path materials on tentative trends in rock avalanche emplacement dynamics and runout behaviour.

  10. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal

    2011-05-01

    Previous attempts have been devoted to mimic biological vision intelligence at the architectural system level. In this paper, a novel imitation of biological visual system intelligence is suggested, at the device level with the introduction of novel photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume to increase the photodiode responsivity, and thus its photosensitivity. In addition, it can virtually boost the pixel fill factor (FF) above the 100% classical limit due to decoupling of its vertical sensing area from its limited planar circuitry area. Furthermore, the suggested nanorod photodiode photosensitivity is analytically proven to be higher than that of the planar photodiode. We also show semi-empirically that the responsivity of the suggested device varies linearly with its height; this important feature has been confirmed using Sentaurus simulation. The proposed nano-photorod is believed to meet the increasingly stringent High-Resolution-Low-Light (HRLL) detection requirements of the camera-phone and biomedical imaging markets. © 2011 IEEE.

  11. Nanomechanics of slip avalanches in amorphous plasticity

    Science.gov (United States)

    Cao, Penghui; Dahmen, Karin A.; Kushima, Akihiro; Wright, Wendelin J.; Park, Harold S.; Short, Michael P.; Yip, Sidney

    2018-05-01

    Discrete stress relaxations (slip avalanches) in a model metallic glass under uniaxial compression are studied using a metadynamics algorithm for molecular simulation at experimental strain rates. The onset of yielding is observed at the first major stress drop, accompanied, upon analysis, by the formation of a single localized shear band region spanning the entire system. During the elastic response prior to yielding, low concentrations of shear transformation deformation events appear intermittently and spatially uncorrelated. During serrated flow following yielding, small stress drops occur interspersed between large drops. The simulation results point to a threshold value of stress dissipation as a characteristic feature separating major and minor avalanches consistent with mean-field modeling analysis and mechanical testing experiments. We further interpret this behavior to be a consequence of a nonlinear interplay of two prevailing mechanisms of amorphous plasticity, thermally activated atomic diffusion and stress-induced shear transformations, originally proposed by Spaepen and Argon, respectively. Probing the atomistic processes at widely separate strain rates gives insight to different modes of shear band formation: percolation of shear transformations versus crack-like propagation. Additionally a focus on crossover avalanche size has implications for nanomechanical modeling of spatially and temporally heterogeneous dynamics.

  12. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    Duun, Sune; Haahr, Rasmus G; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz -1/2 cm -1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  13. Theory of suppressing avalanche process of carrier in short pulse laser irradiated dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Deng, H. X., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Zu, X. T., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Xiang, X. [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, W. G.; Yuan, X. D. [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, K., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu [Department of Materials Engineering and Sciences, University of Michigan, 413B Space Research Building, Ann Arbor, Michigan 48109-2143 (United States); Gao, F. [Pacific Northwest National Laboratory, P. O. Box 999, Richland, Washington 99352 (United States)

    2014-05-28

    A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics.

  14. The December 2008 Crammont rock avalanche, Mont Blanc massif area, Italy

    Directory of Open Access Journals (Sweden)

    P. Deline

    2011-12-01

    Full Text Available We describe a 0.5 Mm3 rock avalanche that occurred in 2008 in the western Alps and discuss possible roles of controlling factors in the context of current climate change. The source is located between 2410 m and 2653 m a.s.l. on Mont Crammont and is controlled by a densely fractured rock structure. The main part of the collapsed rock mass deposited at the foot of the rock wall. A smaller part travelled much farther, reaching horizontal and vertical travel distances of 3050 m and 1560 m, respectively. The mobility of the rock mass was enhanced by channelization and snow. The rock-avalanche volume was calculated by comparison of pre- and post-event DTMs, and geomechanical characterization of the detachment zone was extracted from LiDAR point cloud processing. Back analysis of the rock-avalanche runout suggests a two stage event.

    There was no previous rock avalanche activity from the Mont Crammont ridge during the Holocene. The 2008 rock avalanche may have resulted from permafrost degradation in the steep rock wall, as suggested by seepage water in the scar after the collapse in spite of negative air temperatures, and modelling of rock temperatures that indicate warm permafrost (T > −2 °C.

  15. A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2010-01-01

    We report a photodiode for use in a reflectance pulse oximeter for use in autonomous and low-power homecare applications. The novelty of the reflectance pulse oximeter is a large ring shaped backside silicon pn photodiode. The ring-shaped photodiode gives optimal gathering of light and thereby...... enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has...

  16. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho Tatebayashi, Gunma 374-0047 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fukuda, Kentaro; Kawaguchi, Noriaki [Tokuyama Corp., 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2011-12-11

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF{sub 6} crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width) Multiplication-Sign 3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF{sub 6} after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width) Multiplication-Sign 3.8 mm (length) Multiplication-Sign 5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8 Multiplication-Sign 10{sup 5} n/cm{sup 2} s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 {mu}s, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF{sub 6} scintillator.

  17. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    International Nuclear Information System (INIS)

    Totsuka, Daisuke; Yanagida, Takayuki; Fukuda, Kentaro; Kawaguchi, Noriaki; Fujimoto, Yutaka; Pejchal, Jan; Yokota, Yuui; Yoshikawa, Akira

    2011-01-01

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF 6 crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width)×3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF 6 after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width)×3.8 mm (length)×5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8×10 5 n/cm 2 s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 μs, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF 6 scintillator.

  18. Avalanches in functional materials and geophysics

    CERN Document Server

    Saxena, Avadh; Planes, Antoni

    2017-01-01

    This book provides the state-of-the art of the present understanding of avalanche phenomena in both functional materials and geophysics. The main emphasis of the book is analyzing these apparently different problems within the common perspective of out-of-equilibrium phenomena displaying spatial and temporal complexity that occur in a broad range of scales. Many systems, when subjected to an external force, respond intermittently in the form of avalanches that often span over a wide range of sizes, energies and durations. This is often related to a class of critical behavior characterized by the absence of characteristic scales. Typical examples are magnetization processes, plastic deformation and failure occuring in functional materials. These phenomena share many similarities with seismicity arising from the earth crust failure due to stresses that originate from plate tectonics.

  19. Rockslide-debris avalanche of May 18, 1980, Mount St. Helens Volcano, Washington

    Science.gov (United States)

    Glicken, Harry

    1996-01-01

    This report provides a detailed picture of the rockslide-debris avalanche of the May 18, 1980, eruption of Mount St. Helens volcano. It provides a characterization of the deposit, a reinterpretation of the details of the first minutes of the eruption of May 18, and insight into the transport mechanism of the mass movement. Details of the rockslide event, as revealed by eyewitness photographs, are correlated with features of the deposit. The photographs show three slide blocks in the rockslide movement. Slide block I was triggered by a magnitude 5.1 earthquake at 8:32 a.m. Pacific Daylight Time (P.D.T.). An exploding cryptodome burst through slide block II to produce the 'blast surge.' Slide block III consisted of many discrete failures that were carried out in continuing pyroclastic currents generated from the exploding cryptodome. The cryptodome continued to depressurize after slide block III, producing a blast deposit that rests on top of the debris-avalanche deposit. The hummocky 2.5 cubic kilometer debris-avalanche deposit consists of block facies (pieces of the pre-eruption Mount St. Helens transported relatively intact) and matrix facies (a mixture of rocks from the old mountain and cryptodome dacite). Block facies is divided into five lithologic units. Matrix facies was derived from the explosively generated current of slide block III as well as from disaggregation and mixing of debris-avalanche blocks. The mean density of the old cone was measured to be abut 20 percent greater than the mean density of the avalanche deposit. Density in the deposit does not decrease with distance which suggests that debris-avalanche blocks were dilated at the mountain, rather than during transport. Various grain-size parameters that show that clast size converges about a mean with distance suggest mixing during transport. The debris-avalanche flow can be considered a grain flow, where particles -- either debris-avalanche blocks or the clasts within the blocks -- collided and

  20. Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

    Directory of Open Access Journals (Sweden)

    Ciura Łukasz

    2014-08-01

    Full Text Available The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

  1. Statistical analysis and trends of wet snow avalanches in the French Alps over the period 1959-2010

    Science.gov (United States)

    Naaim, Mohamed

    2017-04-01

    Since an avalanche contains a significant proportion of wet snow, its characteristics and its behavior change significantly (heterogeneous and polydisperse). Even if on a steep given slope, wet snow avalanches are slow. They can flow over gentle slopes and reach the same extensions as dry avalanches. To highlight the link between climate warming and the proliferation of wet snow avlanches, we crossed two well-documented avalanche databases: the permanent avalanche chronicle (EPA) and the meteorological re-analyzes. For each avalanche referenced in EPA, a moisture index I is buit. It represents the ratio of the thickness of the wet snow layer to the total snow thickness, at the date of the avalanche on the concerned massif at 2400 m.a.s.l. The daily and annual proportion of avalanches exceeding a given threshold of I are calculated for each massif of the French alps. The statistical distribution of wet avalanches per massif is calculated over the period 1959-2009. The statistical quantities are also calculated over two successive periods of the same duration 1959-1984 and 1984-2009, and the annual evolution of the proportion of wet avalanches is studied using time-series tools to detect potential rupture or trends. This study showed that about 77% of avalanches on the French alpine massif mobilize dry snow. The probability of having an avalanche of a moisture index greater than 10 % in a given year is 0.2. This value varies from one massif to another. The analysis between the two successive periods showed a significant growth of wet avalanches on 20 massifs and a decrease on 3 massifs. The study of time-series confirmed these trends, which are of the inter-annual variability level.

  2. Evaluation of electrical crosstalk in high-density photodiode arrays for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ji Fan; Juntunen, Mikko; Hietanen, Iiro

    2009-01-01

    Electrical crosstalk is one of the important parameters in the photodiode array detector for X-ray imaging applications, and it becomes more important when the density of the photodiode array becomes higher. This paper presents the design of the high-density photodiode array with 250 μm pitch and 50 μm gap. The electrical crosstalk of the demonstrated samples is evaluated and compared with different electrode configurations: cathode bias mode and anode bias mode. The measurement results show good electrical crosstalk, ∼0.23%, in cathode bias mode regardless of the bias voltage, and slightly decreased or increased electrical crosstalk in anode bias mode. Moreover, the quantum efficiency is also evaluated from the same samples, and it behaves similar to the electrical crosstalk. Finally, some design guidance of the high-density photodiode array is given based on the discussion.

  3. Lumped transmission line avalanche pulser

    Science.gov (United States)

    Booth, Rex

    1995-01-01

    A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

  4. Information processing occurs via critical avalanches in a model of the primary visual cortex

    International Nuclear Information System (INIS)

    Bortolotto, G. S.; Girardi-Schappo, M.; Gonsalves, J. J.; Tragtenberg, M. H. R.; Pinto, L. T.

    2016-01-01

    We study a new biologically motivated model for the Macaque monkey primary visual cortex which presents power-law avalanches after a visual stimulus. The signal propagates through all the layers of the model via avalanches that depend on network structure and synaptic parameter. We identify four different avalanche profiles as a function of the excitatory postsynaptic potential. The avalanches follow a size-duration scaling relation and present critical exponents that match experiments. The structure of the network gives rise to a regime of two characteristic spatial scales, one of which vanishes in the thermodynamic limit. (paper)

  5. Avalanches in the Bean critical-state model

    International Nuclear Information System (INIS)

    Barford, W.

    1997-01-01

    A macroscopic equation of motion for the flux density in dirty type-II superconductors is introduced. The flux density is subject to various types of spatially varying pinning force. When there is no stick-slip dynamics, i.e., when the static pinning force equals the dynamic pinning force, it is shown that in both one and two dimensions an increase in the surface magnetic field leads to an overall height change and hence to a change in magnetization equal to the change in the surface magnetic field. More interesting behavior occurs on introducing stick-slip dynamics, i.e., when the static pinning force exceeds the dynamic pinning force. In this limit a distribution of avalanche sizes over four orders of magnitude is found for a 100x100 lattice. Apart from the anomalous behavior at large sizes, this is shown to fit a distribution of the form P(s)∼s -ν exp(-s/α), where s is the avalanche size. The anomalous behavior for large sizes corresponds to avalanches which involve most of the lattice and, hence, cause the flux to open-quotes slide over the edge,close quotes as detected by a change in the edge magnetization. copyright 1997 The American Physical Society

  6. Modelization, fabrication and evaluation avalanche photodiodes polarized in Geiger mode for the single photon in astrophysics applications

    International Nuclear Information System (INIS)

    Pellion, D.

    2008-12-01

    The genesis of the work presented in this this is in the field of very high energy astrophysics. One century ago, scientists identified a new type of messenger coming from space: cosmic rays. This radiation consists of particles (photons or other) of very high energy which bombard the Earth permanently. The passage of cosmic radiations in the Earth's atmosphere results in the creation of briefs luminous flashes (5 ns) of very low intensity (1 pW), a Cherenkov flash, and then becomes visible on the ground. In the current state of the art the best detector of light today is the Photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. But there are some drawbacks: low quantum efficiency, cost, weight etc. We present in this thesis a new alternative technology: silicon photon counters, made of photodiodes polarized in Geiger mode. This operating mode makes it possible to obtain an effect of multiplication comparable to that of the PMT. A physical and electrical model was developed to reproduce the behaviour of this detector. We then present in this thesis work an original technological process allowing the realization of these devices in the Center of Technology of LAAS-CNRS, with the simulation of each operation of the process. We developed a scheme for the electric characterization of the device, from the static mode to the dynamic mode, in order to check conformity with SILVACO simulations and to the initial model. Results are already excellent, given this is only a first prototype step, and comparable with the results published in the literature. These silicon devices can intervene in all the applications where there is a photomultiplier and replace it. The applications are thus very numerous and the growth of the market of these detectors is very fast. We present a first astrophysical experiment installed at the 'Pic du Midi' site which has detected Cherenkov flashes from cosmic rays with this new semiconductor technology. (author)

  7. Development of analog solid-state photo-detectors for Positron Emission Tomography

    International Nuclear Information System (INIS)

    Bisogni, Maria Giuseppina; Morrocchi, Matteo

    2016-01-01

    Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

  8. Development of analog solid-state photo-detectors for Positron Emission Tomography

    Energy Technology Data Exchange (ETDEWEB)

    Bisogni, Maria Giuseppina, E-mail: giuseppina.bisogni@pi.infn.it; Morrocchi, Matteo

    2016-02-11

    Solid-state photo-detectors are one of the main innovations of past century in the field of sensors. First produced in the early forties with the invention of the p–n junction in silicon and the study of its optical properties, photo-detectors received a major boost in the sixties when the p-i-n (PIN) photodiode was developed and successfully used in several applications. The development of devices with internal gain, avalanche photodiodes (APD) first and then Geiger-mode avalanche photodiodes, named single photon avalanche diode (SPAD), leads to a substantial improvement in sensitivity and allowed single photon detection. Later on, thousands of SPADs have been assembled in arrays of few millimeters squared (named SiPM, silicon photo-multiplier) with single photon resolution. The high internal gain of SiPMs, together with other features peculiar of the silicon technology like compactness, speed and compatibility with magnetic fields, promoted SiPMs as the principal photo-detector competitor of photomultipliers in many applications from radiation detection to medical imaging. This paper provides a review of the properties of analog solid-state photo-detectors. Particular emphasis is given to latest advances on Positron Emission Tomography instrumentation boosted by the adoption of the silicon photo-detectors as an alternative to photomultiplier tubes (PMTs). Special attention is dedicated to the SiPMs, which are playing a key role in the development of innovative scanners.

  9. Hybrid amplifier for calorimetry with photodiode readout

    Energy Technology Data Exchange (ETDEWEB)

    Sushkov, V V

    1994-12-31

    A hybrid surface mounted amplifier for the photodiode readout of the EM calorimeter has been developed. The main technical characteristics of the design are presented. The design able to math readout constraints for a high luminosity collider experiment is discussed. 10 refs., 2 tabs., 8 figs.

  10. Crystal Clear - New crystals for LHC experiments help to improve PET scanners Exhibition LEPFest 2000

    CERN Multimedia

    2000-01-01

    Better resolution through smaller crystals Better images through higher light yieldHigh efficiency, stability and gain by using avalanche photodiodes and low noise electronics Reduced cost of crystals (1/10) through mass production

  11. Snow-avalanche impact craters in southern Norway: Their morphology and dynamics compared with small terrestrial meteorite craters

    Science.gov (United States)

    Matthews, John A.; Owen, Geraint; McEwen, Lindsey J.; Shakesby, Richard A.; Hill, Jennifer L.; Vater, Amber E.; Ratcliffe, Anna C.

    2017-11-01

    This regional inventory and study of a globally uncommon landform type reveals similarities in form and process between craters produced by snow-avalanche and meteorite impacts. Fifty-two snow-avalanche impact craters (mean diameter 85 m, range 10-185 m) were investigated through field research, aerial photographic interpretation and analysis of topographic maps. The craters are sited on valley bottoms or lake margins at the foot of steep avalanche paths (α = 28-59°), generally with an easterly aspect, where the slope of the final 200 m of the avalanche path (β) typically exceeds 15°. Crater diameter correlates with the area of the avalanche start zone, which points to snow-avalanche volume as the main control on crater size. Proximal erosional scars ('blast zones') up to 40 m high indicate up-range ejection of material from the crater, assisted by air-launch of the avalanches and impulse waves generated by their impact into water-filled craters. Formation of distal mounds up to 12 m high of variable shape is favoured by more dispersed down-range deposition of ejecta. Key to the development of snow-avalanche impact craters is the repeated occurrence of topographically-focused snow avalanches that impact with a steep angle on unconsolidated sediment. Secondary craters or pits, a few metres in diameter, are attributed to the impact of individual boulders or smaller bodies of snow ejected from the main avalanche. The process of crater formation by low-density, low-velocity, large-volume snow flows occurring as multiple events is broadly comparable with cratering by single-event, high-density, high-velocity, small-volume projectiles such as small meteorites. Simple comparative modelling of snow-avalanche events associated with a crater of average size (diameter 85 m) indicates that the kinetic energy of a single snow-avalanche impact event is two orders of magnitude less than that of a single meteorite-impact event capable of producing a crater of similar size

  12. Panoramic irradiator dose mapping with pin photodiodes

    International Nuclear Information System (INIS)

    Ferreira, Danilo Cardenuto; Napolitano, Celia Marina; Bueno, Carmen Cecilia

    2011-01-01

    In this work we study the possibility of using commercial silicon PIN photodiodes (Siemens, SFH 00206) for dose mapping in the Panoramic Irradiator facility at IPEN-CNEN/SP. The chosen photodiode, that is encased in 1.2 mm thickness polymer layer, displays promising dosimetric characteristics such as small size (sensitive area of 7.00 mm 2 ), high sensitivity and low dark current (≅ 300 pA, at 0 V) together with low-cost and wide availability. The Panoramic facility is an irradiator Type II with absorbed dose certificated by International Dose Assurance Service (IDAS) offered by the International Agency Energy Atomic (IAEA). The charge registered by the diode as a function of the absorbed dose was in excellent agreement with that one calibrated by IDAS. Besides this, the easy handling and fast response of the SFH00206 diode compared to Fricke chemical dosimeters encouraged us to perform dose mapping around the source. (author)

  13. Modelization, fabrication and evaluation avalanche photodiodes polarized in Geiger mode for the single photon in astrophysics applications; Modelisation, fabrication et evaluation des photodiodes a avalanche polarisees en mode Geiger pour la detection du photon unique dans les applications Astrophysiques

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D

    2008-12-15

    The genesis of the work presented in this this is in the field of very high energy astrophysics. One century ago, scientists identified a new type of messenger coming from space: cosmic rays. This radiation consists of particles (photons or other) of very high energy which bombard the Earth permanently. The passage of cosmic radiations in the Earth's atmosphere results in the creation of briefs luminous flashes (5 ns) of very low intensity (1 pW), a Cherenkov flash, and then becomes visible on the ground. In the current state of the art the best detector of light today is the Photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. But there are some drawbacks: low quantum efficiency, cost, weight etc. We present in this thesis a new alternative technology: silicon photon counters, made of photodiodes polarized in Geiger mode. This operating mode makes it possible to obtain an effect of multiplication comparable to that of the PMT. A physical and electrical model was developed to reproduce the behaviour of this detector. We then present in this thesis work an original technological process allowing the realization of these devices in the Center of Technology of LAAS-CNRS, with the simulation of each operation of the process. We developed a scheme for the electric characterization of the device, from the static mode to the dynamic mode, in order to check conformity with SILVACO simulations and to the initial model. Results are already excellent, given this is only a first prototype step, and comparable with the results published in the literature. These silicon devices can intervene in all the applications where there is a photomultiplier and replace it. The applications are thus very numerous and the growth of the market of these detectors is very fast. We present a first astrophysical experiment installed at the 'Pic du Midi' site which has detected Cherenkov flashes from cosmic rays with this new semiconductor technology

  14. Can graphene make better HgCdTe infrared detectors?

    Directory of Open Access Journals (Sweden)

    Shi Yanli

    2011-01-01

    Full Text Available Abstract We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.

  15. Validating numerical simulations of snow avalanches using dendrochronology: the Cerro Ventana event in Northern Patagonia, Argentina

    Directory of Open Access Journals (Sweden)

    A. Casteller

    2008-05-01

    Full Text Available The damage caused by snow avalanches to property and human lives is underestimated in many regions around the world, especially where this natural hazard remains poorly documented. One such region is the Argentinean Andes, where numerous settlements are threatened almost every winter by large snow avalanches. On 1 September 2002, the largest tragedy in the history of Argentinean mountaineering took place at Cerro Ventana, Northern Patagonia: nine persons were killed and seven others injured by a snow avalanche. In this paper, we combine both numerical modeling and dendrochronological investigations to reconstruct this event. Using information released by local governmental authorities and compiled in the field, the avalanche event was numerically simulated using the avalanche dynamics programs AVAL-1D and RAMMS. Avalanche characteristics, such as extent and date were determined using dendrochronological techniques. Model simulation results were compared with documentary and tree-ring evidences for the 2002 event. Our results show a good agreement between the simulated projection of the avalanche and its reconstructed extent using tree-ring records. Differences between the observed and the simulated avalanche, principally related to the snow height deposition in the run-out zone, are mostly attributed to the low resolution of the digital elevation model used to represent the valley topography. The main contributions of this study are (1 to provide the first calibration of numerical avalanche models for the Patagonian Andes and (2 to highlight the potential of Nothofagus pumilio tree-ring records to reconstruct past snow-avalanche events in time and space. Future research should focus on testing this combined approach in other forested regions of the Andes.

  16. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    International Nuclear Information System (INIS)

    Hyun, H.J.; Anderson, T.; Angelaszek, D.; Baek, S.J.; Copley, M.; Coutu, S.; Han, J.H.; Huh, H.G.; Hwang, Y.S.; Im, S.; Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J.; Kim, K.C.; Kwashnak, K.; Lee, J.; Lee, M.H.; Link, J.T.; Lutz, L.

    2015-01-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm 2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests

  17. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hyun, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Anderson, T. [Pennsylvania State University, University Park, PA 16802 (United States); Angelaszek, D. [University of Maryland, College Park, MD 20740 (United States); Baek, S.J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Copley, M. [University of Maryland, College Park, MD 20740 (United States); Coutu, S. [Pennsylvania State University, University Park, PA 16802 (United States); Han, J.H.; Huh, H.G. [University of Maryland, College Park, MD 20740 (United States); Hwang, Y.S. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Im, S. [Pennsylvania State University, University Park, PA 16802 (United States); Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kim, K.C.; Kwashnak, K. [University of Maryland, College Park, MD 20740 (United States); Lee, J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, M.H. [University of Maryland, College Park, MD 20740 (United States); Link, J.T. [NASA GSFC, Greenbelt, MD 20771 (United States); CRESST(USRA), Columbia, MD 21044 (United States); Lutz, L. [University of Maryland, College Park, MD 20740 (United States); and others

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm{sup 2} at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  18. Massive Formation of Equiaxed Crystals by Avalanches of Mushy Zone Segments

    Science.gov (United States)

    Ludwig, A.; Stefan-Kharicha, M.; Kharicha, A.; Wu, M.

    2017-06-01

    It is well known that the growth and motion of equiaxed crystals govern important microstructural features, especially in larger castings such as heavy ingots. To determine the origin of the equiaxed crystals, heterogeneous nucleation, and/or fragmentation of dendrite arms from columnar regions are often discussed. In the present study, we demonstrate that under certain conditions relatively large areas of mushy regions slide downward and form spectacular crystal avalanches. These avalanches crumble into thousands of dendritic fragments, whereby the larger fragments immediately sediment and the smaller proceed to behave as equiaxed crystals. Traces of such crystal avalanches can be seen by conspicuous equiaxed layers in the lower part of the casting. From the arguments in the discussion, it is believed that such a phenomenon may occur in alloys which reveal an upward solutal buoyancy in the interdendritic mush. This would include certain steels and other alloys such as Cu-Al, Pb-Sn, or Ni-Al-alloys. Moreover, the occurrence of crystal avalanches contribute to the formation of V-segregations.

  19. Visible light photodiodes and photovoltages from detonation nanodiamonds

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Stehlík, Štěpán; Kromka, Alexander; Arnault, J.-C.; Weis, M.; Jakabovič, J.

    2016-01-01

    Roč. 1, č. 14 (2016), s. 971-975 ISSN 2059-8521 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : nanodiamond * photodiode Subject RIV: BM - Solid Matter Physics ; Magnetism

  20. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

    1993-01-01

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  1. A concept for optimizing avalanche rescue strategies using a Monte Carlo simulation approach.

    Directory of Open Access Journals (Sweden)

    Ingrid Reiweger

    Full Text Available Recent technical and strategical developments have increased the survival chances for avalanche victims. Still hundreds of people, primarily recreationists, get caught and buried by snow avalanches every year. About 100 die each year in the European Alps-and many more worldwide. Refining concepts for avalanche rescue means to optimize the procedures such that the survival chances are maximized in order to save the greatest possible number of lives. Avalanche rescue includes several parameters related to terrain, natural hazards, the people affected by the event, the rescuers, and the applied search and rescue equipment. The numerous parameters and their complex interaction make it unrealistic for a rescuer to take, in the urgency of the situation, the best possible decisions without clearly structured, easily applicable decision support systems. In order to analyse which measures lead to the best possible survival outcome in the complex environment of an avalanche accident, we present a numerical approach, namely a Monte Carlo simulation. We demonstrate the application of Monte Carlo simulations for two typical, yet tricky questions in avalanche rescue: (1 calculating how deep one should probe in the first passage of a probe line depending on search area, and (2 determining for how long resuscitation should be performed on a specific patient while others are still buried. In both cases, we demonstrate that optimized strategies can be calculated with the Monte Carlo method, provided that the necessary input data are available. Our Monte Carlo simulations also suggest that with a strict focus on the "greatest good for the greatest number", today's rescue strategies can be further optimized in the best interest of patients involved in an avalanche accident.

  2. Modeling the influence of snow cover temperature and water content on wet-snow avalanche runout

    Directory of Open Access Journals (Sweden)

    C. Vera Valero

    2018-03-01

    Full Text Available Snow avalanche motion is strongly dependent on the temperature and water content of the snow cover. In this paper we use a snow cover model, driven by measured meteorological data, to set the initial and boundary conditions for wet-snow avalanche calculations. The snow cover model provides estimates of snow height, density, temperature and liquid water content. This information is used to prescribe fracture heights and erosion heights for an avalanche dynamics model. We compare simulated runout distances with observed avalanche deposition fields using a contingency table analysis. Our analysis of the simulations reveals a large variability in predicted runout for tracks with flat terraces and gradual slope transitions to the runout zone. Reliable estimates of avalanche mass (height and density in the release and erosion zones are identified to be more important than an exact specification of temperature and water content. For wet-snow avalanches, this implies that the layers where meltwater accumulates in the release zone must be identified accurately as this defines the height of the fracture slab and therefore the release mass. Advanced thermomechanical models appear to be better suited to simulate wet-snow avalanche inundation areas than existing guideline procedures if and only if accurate snow cover information is available.

  3. Hybrid phase transition into an absorbing state: Percolation and avalanches

    Science.gov (United States)

    Lee, Deokjae; Choi, S.; Stippinger, M.; Kertész, J.; Kahng, B.

    2016-04-01

    Interdependent networks are more fragile under random attacks than simplex networks, because interlayer dependencies lead to cascading failures and finally to a sudden collapse. This is a hybrid phase transition (HPT), meaning that at the transition point the order parameter has a jump but there are also critical phenomena related to it. Here we study these phenomena on the Erdős-Rényi and the two-dimensional interdependent networks and show that the hybrid percolation transition exhibits two kinds of critical behaviors: divergence of the fluctuations of the order parameter and power-law size distribution of finite avalanches at a transition point. At the transition point global or "infinite" avalanches occur, while the finite ones have a power law size distribution; thus the avalanche statistics also has the nature of a HPT. The exponent βm of the order parameter is 1 /2 under general conditions, while the value of the exponent γm characterizing the fluctuations of the order parameter depends on the system. The critical behavior of the finite avalanches can be described by another set of exponents, βa and γa. These two critical behaviors are coupled by a scaling law: 1 -βm=γa .

  4. High-Gain Avalanche Rushing amorphous Photoconductor (HARP) detector

    Energy Technology Data Exchange (ETDEWEB)

    Tanioka, K. [NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)], E-mail: tanioka.k-jg@nhk.or.jp

    2009-09-01

    We have been studying a very sensitive image sensor since the early 1980s. In 1985, the author found for the first time that an experimental pickup tube with an amorphous selenium photoconductive target exhibits high sensitivity with excellent picture quality because of a continuous and stable avalanche multiplication phenomenon. We named the pickup tube with an amorphous photoconductive layer operating in the avalanche-mode 'HARP': High-gain Avalanche Rushing amorphous Photoconductor. A color camera equipped with the HARP pickup tubes has a maximum sensitivity of 11 lx at F8. This means that the HARP camera is about 100 times as sensitive as that of CCD camera for broadcasting. This ultrahigh-sensitivity HARP pickup tube is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications, including medical diagnoses, biotech research, and nighttime surveillance. In addition, since the HARP target can convert X-rays into electrons directly, it should be possible to exploit this capability to produce X-ray imaging devices with unparalleled levels of resolution and sensitivity.

  5. Photodiode area effect on performance of X-ray CMOS active pixel sensors

    Science.gov (United States)

    Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

    2018-02-01

    Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

  6. Radon measurements with a PIN photodiode

    International Nuclear Information System (INIS)

    Martin-Martin, A.; Gutierrez-Villanueva, J.L.; Munoz, J.M.; Garcia-Talavera, M.; Adamiec, G.; Iniguez, M.P.

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218 Po and 214 Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations

  7. Particle and photon detection for a neutron radiative decay experiment

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, T.R. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)], E-mail: thomas.gentile@nist.gov; Dewey, M.S.; Mumm, H.P.; Nico, J.S.; Thompson, A.K. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Chupp, T.E. [University of Michigan, Ann Arbor, MI 48109 (United States); Cooper, R.L. [University of Michigan, Ann Arbor, MI 48109 (United States)], E-mail: cooperrl@umich.edu; Fisher, B.M.; Kremsky, I.; Wietfeldt, F.E. [Tulane University, New Orleans, LA 70118 (United States); Kiriluk, K.G.; Beise, E.J. [University of Maryland, College Park, MD 20742 (United States)

    2007-08-21

    We present the particle and photon detection methods employed in a program to observe neutron radiative beta-decay. The experiment is located at the NG-6 beam line at the National Institute of Standards and Technology Center for Neutron Research. Electrons and protons are guided by a 4.6 T magnetic field and detected by a silicon surface barrier detector. Photons with energies between 15 and 750 keV are registered by a detector consisting of a bismuth germanate scintillator coupled to a large area avalanche photodiode. The photon detector operates at a temperature near 80 K in the bore of a superconducting magnet. We discuss CsI as an alternative scintillator, and avalanche photodiodes for direct detection of photons in the 0.1-10 keV range.

  8. Single-photon compressive imaging with some performance benefits over raster scanning

    International Nuclear Information System (INIS)

    Yu, Wen-Kai; Liu, Xue-Feng; Yao, Xu-Ri; Wang, Chao; Zhai, Guang-Jie; Zhao, Qing

    2014-01-01

    A single-photon imaging system based on compressed sensing has been developed to image objects under ultra-low illumination. With this system, we have successfully realized imaging at the single-photon level with a single-pixel avalanche photodiode without point-by-point raster scanning. From analysis of the signal-to-noise ratio in the measurement we find that our system has much higher sensitivity than conventional ones based on point-by-point raster scanning, while the measurement time is also reduced. - Highlights: • We design a single photon imaging system with compressed sensing. • A single point avalanche photodiode is used without raster scanning. • The Poisson shot noise in the measurement is analyzed. • The sensitivity of our system is proved to be higher than that of raster scanning

  9. Dose determination on buildup region using photodiodes

    International Nuclear Information System (INIS)

    Khoury, H.J.; Lopes, F.J.; Melo, F. de A.

    1989-01-01

    A clinical dosemeter using photodiode BPW-34 was developed, allowing the determination of dose on buildup region. The measures were made with X-rays beam of linear accelerator and with gamma radiation of cobalt 60. The results were compared with others made in a ionization chamber. (C.G.C.) [pt

  10. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    Energy Technology Data Exchange (ETDEWEB)

    Siwak, N. P. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States); Fan, X. Z.; Ghodssi, R. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Kanakaraju, S.; Richardson, C. J. K. [Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  11. High gain multigap avalanche detectors for Cerenkov ring imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gilmore, R.S.; Lavender, W.M.; Leith, D.W.G.S.; Williams, S.H.

    1980-10-01

    We report on a continuing study of multigap parallel plate avalanche chambers, primarily as photoelectron detectors for use with Cerenkov ring imaging counters. By suitable control of the fields in successive gaps and by introducing screens to reduce photon feedback to the cathode the gain many be increased considerably. We have obtained gains in excess of 6 x 10/sup 7/ for photoelectrons with a good pulse height spectrum and expect to increase this further. We discuss the use of resistive anodes to give avalanche positions in two dimensions by charge division.

  12. Interface Properties and Surface Leakage of HgCdTe Photodiodes.

    Science.gov (United States)

    1980-01-01

    these techniques, we found that (a) the com- position of a 1200 )anodic film is 68% TeO2 , 27% CdO, and 6% HgO, and (b) the cations, especially the Hg...of TeO2 (Fig. 1); (b) irradiation with an electron beam of a few keV energy can convert the surface layer (10-100 1) of (Rg,Cd)Te into CdTe (Fig. 2...remove the scratches. The polishing cloth was secured to a glass olishing disk which is not affected by the corrosive nature of the etch - a 5

  13. Upgrade of the CMS hardron calorimeter for an upgraded LHC

    OpenAIRE

    Anderson, Jake

    2012-01-01

    The CMS barrel and endcap hadron calorimeters (Hcal) upgrading the current photo-sensors are hybrid photodiodes (HPDs) to meet the demands of the upgraded luminosity of the LHC. A key aspect of the Hcal upgrade is to add longitudinal segmentation to improve background rejection, energy resolution, and electron isolation at L1 trigger. The increased segmentation can be achieved by replacing the HPD's with multi-pixel Geiger-mode avalanche photodiodes. The upgraded electron...

  14. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2x2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3x3x25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a open-quotes lossyclose quotes reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25 degrees C with a photodiode amplifier peaking time of 2 μs. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal

  15. Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions

    International Nuclear Information System (INIS)

    Lu Jiang; Tian Xiaoli; Lu Shuojin; Zhou Hongyu; Zhu Yangjun; Han Zhengsheng

    2013-01-01

    The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching (UIS) conditions is measured. This measurement is to investigate and compare the dynamic avalanche failure behavior of the power MOSFETs and the IGBT, which occur at different current conditions. The UIS measurement results at different current conditions show that the main failure reason of the power MOSFETs is related to the parasitic bipolar transistor, which leads to the deterioration of the avalanche reliability of power MOSFETs. However, the results of the IGBT show two different failure behaviors. At high current mode, the failure behavior is similar to the power MOSFETs situation. But at low current mode, the main failure mechanism is related to the parasitic thyristor activity during the occurrence of the avalanche process and which is in good agreement with the experiment result. (semiconductor devices)

  16. New advances for modelling the debris avalanches

    Science.gov (United States)

    Cuomo, Sabatino; Cascini, Leonardo; Pastor, Manuel; Castorino, Giuseppe Claudio

    2013-04-01

    Flow-like landslides are a major global hazard and they occur worldwide causing a large number of casualties, significant structural damages to property and infrastructures as well as economic losses. When involving open slopes, these landslides often occur in triangular source areas where initial slides turn into avalanches through further failures and/or eventual soil entrainment. This paper deals with the numerical modelling of the propagation stage of debris avalanches which provides information such as the propagation pattern of the mobilized material, its velocity, thickness and run-out distance. In the paper, a "depth integrated" model is used which allows: i) adequately taking into account the irregular topography of real slopes which greatly affect the propagation stage and ii) using a less time consuming model than fully 3D approaches. The used model is named "GeoFlow_SPH" and it was formerly applied to theoretical, experimental and real case histories (Pastor et al., 2009; Cascini et al., 2012). In this work the behavior of debris avalanches is analyzed with special emphasis on the apical angle, one of the main features of this type of landslide, in relation to soil rheology, hillslope geometry and features of triggering area. Furthermore, the role of erosion has been investigated with reference to the uppermost parts of open slopes with a different steepness. These analyses are firstly carried out for simplified benchmark slopes, using both water-like materials (with no shear strength) and debris type materials. Then, three important case studies of Campania region (Cervinara, Nocera Inferiore e Sarno) are analyzed where debris avalanches involved pyroclastic soils originated from the eruptive products of Vesusius volcano. The results achieved for both benchmark slopes and real case histories outline the key role played by the erosion on the whole propagation stage of debris avalanches. The results are particularly satisfactory since they indicate the

  17. Scaling behavior of individual barkhausen avalanches in nucleation-mediated magnetization reversal processes

    Energy Technology Data Exchange (ETDEWEB)

    Im, Mi-Young; Fischer, Peter; Kim, Dong-Hyun; Shin, Sung-Chul

    2009-11-09

    We report the scaling behavior of Barkhausen avalanches along the hysteresis loop of a CoCrPt alloy film with perpendicular magnetic anisotropy for every field step of 200 Oe. Individual Barkhausen avalanches are directly observed via high-resolution soft X-ray microscopy with a spatial resolution of 15 nm. The Barkhausen avalanches exhibit a power-law scaling behavior, where the scaling exponent of the power-law distribution drastically changes from 1 {+-} 0.04 to 1.47 {+-} 0.03 as the applied magnetic field approaches the coercivity of the CoCrPt film. We infer that this is due to the coupling of adjacent domains.

  18. First Townsend coefficient of organic vapour in avalanche counters

    International Nuclear Information System (INIS)

    Sernicki, J.

    1990-01-01

    A new concept is presented in the paper for implementing the proven method of determining the first Townsend coefficient (α) of gases using an avalanche counter. The A and B gas constants, interrelated by the expression α/p=A exp[-B/(K/p)], are analyzed. Parallel-plate avalanche counters (PPAC) with an electrode spacing d from 0.1 to 0.4 cm have been employed for the investigation, arranged to register low-energy alpha particles at n-heptane vapour pressures of p≥5 Torr. An in-depth discussion is given, covering the veracity and the behaviour vs K/p, of the n-heptane A and B constants determined at reduced electric-field intensity values ranging from 173.5 to 940 V/cm Torr; the constants have been found to depend upon d. The results of the investigation are compared to available data of the α coefficient of organic vapours used in avalanche counters. The PPAC method of determining α reveals some imperfections at very low values of the pd product. (orig.)

  19. AN MHD AVALANCHE IN A MULTI-THREADED CORONAL LOOP

    Energy Technology Data Exchange (ETDEWEB)

    Hood, A. W.; Cargill, P. J.; Tam, K. V. [School of Mathematics and Statistics, University of St Andrews, St Andrews, Fife, KY16 9SS (United Kingdom); Browning, P. K., E-mail: awh@st-andrews.ac.uk [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom)

    2016-01-20

    For the first time, we demonstrate how an MHD avalanche might occur in a multithreaded coronal loop. Considering 23 non-potential magnetic threads within a loop, we use 3D MHD simulations to show that only one thread needs to be unstable in order to start an avalanche even when the others are below marginal stability. This has significant implications for coronal heating in that it provides for energy dissipation with a trigger mechanism. The instability of the unstable thread follows the evolution determined in many earlier investigations. However, once one stable thread is disrupted, it coalesces with a neighboring thread and this process disrupts other nearby threads. Coalescence with these disrupted threads then occurs leading to the disruption of yet more threads as the avalanche develops. Magnetic energy is released in discrete bursts as the surrounding stable threads are disrupted. The volume integrated heating, as a function of time, shows short spikes suggesting that the temporal form of the heating is more like that of nanoflares than of constant heating.

  20. Observation of the Avalanche of Runaway Electrons in Air in a Strong Electric Field

    Science.gov (United States)

    Gurevich, A. V.; Mesyats, G. A.; Zybin, K. P.; Yalandin, M. I.; Reutova, A. G.; Shpak, V. G.; Shunailov, S. A.

    2012-08-01

    The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

  1. CsI(Tl)-photodiode detectors for gamma-ray spectroscopy

    CERN Document Server

    Fioretto, E; Viesti, G; Cinausero, M; Zuin, L; Fabris, D; Lunardon, M; Nebbia, G; Prete, G

    2000-01-01

    We report on the performances of CsI(Tl)-photodiode detectors for gamma-ray spectroscopy applications. Light output yield and energy resolution have been measured for different crystals and read-out configurations.

  2. Evaluating terrain based criteria for snow avalanche exposure ratings using GIS

    Science.gov (United States)

    Delparte, Donna; Jamieson, Bruce; Waters, Nigel

    2010-05-01

    Snow avalanche terrain in backcountry regions of Canada is increasingly being assessed based upon the Avalanche Terrain Exposure Scale (ATES). ATES is a terrain based classification introduced in 2004 by Parks Canada to identify "simple", "challenging" and "complex" backcountry areas. The ATES rating system has been applied to well over 200 backcountry routes, has been used in guidebooks, trailhead signs and maps and is part of the trip planning component of the AVALUATOR™, a simple decision-support tool for backcountry users. Geographic Information Systems (GIS) offers a means to model and visualize terrain based criteria through the use of digital elevation model (DEM) and land cover data. Primary topographic variables such as slope, aspect and curvature are easily derived from a DEM and are compatible with the equivalent evaluation criteria in ATES. Other components of the ATES classification are difficult to extract from a DEM as they are not strictly terrain based. An overview is provided of the terrain variables that can be generated from DEM and land cover data; criteria from ATES which are not clearly terrain based are identified for further study or revision. The second component of this investigation was the development of an algorithm for inputting suitable ATES criteria into a GIS, thereby mimicking the process avalanche experts use when applying the ATES classification to snow avalanche terrain. GIS based classifications were compared to existing expert assessments for validity. The advantage of automating the ATES classification process through GIS is to assist avalanche experts with categorizing and mapping remote backcountry terrain.

  3. MTF measurement and analysis of linear array HgCdTe infrared detectors

    Science.gov (United States)

    Zhang, Tong; Lin, Chun; Chen, Honglei; Sun, Changhong; Lin, Jiamu; Wang, Xi

    2018-01-01

    The slanted-edge technique is the main method for measurement detectors MTF, however this method is commonly used on planar array detectors. In this paper the authors present a modified slanted-edge method to measure the MTF of linear array HgCdTe detectors. Crosstalk is one of the major factors that degrade the MTF value of such an infrared detector. This paper presents an ion implantation guard-ring structure which was designed to effectively absorb photo-carriers that may laterally defuse between adjacent pixels thereby suppressing crosstalk. Measurement and analysis of the MTF of the linear array detectors with and without a guard-ring were carried out. The experimental results indicated that the ion implantation guard-ring structure effectively suppresses crosstalk and increases MTF value.

  4. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    Ferreira Filho, Alfredo Lopes

    1998-06-01

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm 2 , window of thickness equal or lower than 57 mg/cm 2 , depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  5. A mineralogical and granulometric study of Cayambe volcano debris avalanche deposit

    Science.gov (United States)

    Detienne, M.; Delmelle, P.; Guevara, A.; Samaniego, P.; Bustillos, J.; Sonnet, P.; Opfergelt, S.

    2013-12-01

    Volcano flank/sector collapse represents one of the most catastrophic volcanic hazards. Various volcanic and non-volcanic processes are known to decrease the stability of a volcanic cone, eventually precipitating its gravitational failure. Among them, hydrothermal alteration of volcanic rocks leading to clay mineral formation is recognized as having a large negative impact on rock strength properties. Furthermore, the presence of hydrothermal clays in the collapsing mass influences the behavior of the associated volcanic debris avalanche. In particular, clay-containing debris avalanches seem to travel farther and spread more widely than avalanches of similar volume but which do not incorporate hydrothermally-altered materials. However, the relationship between hydrothermal alteration, flank collapse and debris avalanche behavior is not well understood. The objective of this study is to better determine the volume and composition of hydrothermal clay minerals in the poorly characterized debris avalanche deposit (DAD) of Cayambe composite volcano, located in a densely populated area ~70 km northeast of Quito, Ecuador. Cayambe DAD originated from a sector collapse, which occurred less than 200 ka ago. The DAD is 10-20 m thick and has an estimated total volume of ~0.85 Km3. The H/L ratio (where H is the vertical drop and L is the travel distance of the avalanche) for Cayambe DAD is ~0.095, suggesting a high mobility. In the medial-distal zone, at 9-20 km from its source, the DAD consists of an unstratified and unsorted matrix supporting millimetric to metric clasts. It has a matrix facies (i.e. rich in particles DAD behaved as a cohesive debris flow. Analysis of 13 matrix samples reveals a large variability in particle size distribution. This may reflect poor mixing of the collapsed material during transport. The clay fraction content in the matrix ranges from 15 to 30 wt.%, and does not show a relationship with the sample position in the DAD. Mineralogical

  6. Critical state transformation in hard superconductors resulting from thermomagnetic avalanches

    International Nuclear Information System (INIS)

    Chabanenko, V.V.; Kuchuk, E.I.; Rusakov, V.F.; Abaloszewa, I.; Nabialek, A.; Perez-Rodriguez, F.

    2016-01-01

    The results of experimental investigations of magnetic flux dynamics in finite superconductors, obtained using integral and local measurements methods, are presented. Local methods were aimed at clarifying the role of demagnetizing factor in dynamic formation of a complex magnetic structure of the critical state of hard superconductors. To understand the reasons for cardinal restructuring of the induction, we further analyzed the literature data of flux dynamics visualization during avalanches, obtained by magneto-optical methods. New features in the behavior of the magnetic flux during and after the avalanche were discovered. Two stages of the formation of the induction structures in the avalanche area were established, i.e. of homogeneous and heterogeneous filling with the magnetic flux. The mechanism of the inversion of the induction profile was considered. Oscillations in the speed of the front of the magnetic flux were revealed. Transformation of the critical state near the edge of the sample was analyzed. The role of thermal effects and of de-magnetizing factor in the dissipative flux dynamics was shown. Generalized information allowed, in the framework of the Bean concept, to present a model the transformation of the picture of the induction of the critical state and of the superconducting currents of a finite superconductor as a result of flux avalanches for two regimes - of screening and trapping of the magnetic flux.

  7. Avalanches in a Bose-Einstein condensate

    NARCIS (Netherlands)

    Schuster, J.; Marte, A.; Amtage, S.; Sang, B.; Rempe, G.; Beijerinck, H.C.W.

    2001-01-01

    Collisional avalanches are identified to be responsible for an 8-fold increase of the initial loss rate of a large 87Rb condensate. We show that the collisional opacity of an ultracold gas exhibits a critical value. When exceeded, losses due to inelastic collisions are substantially enhanced. Under

  8. Avalanche effect in the planar array of superheated superconductors

    International Nuclear Information System (INIS)

    Meagher, G.; Pond, J.; Kotlicki, A.; Turrell, B.G.; Eska, G.; Drukier, A.K.

    1996-01-01

    An avalanche effect has been observed in a cryogenic detector based on the planar array of superheated superconductors (PASS). The indium PASS, fabricated by photolithography on a mylar substrate, consisted of 40 well-separated lines each containing about 175 spheres of diameter 18 μm and separation 20 μm with those at the end being shielded by superconducting wire. The magnetic field was applied in the PASS plane parallel to the lines. Avalanche events in which several granules changed their state from superconducting to normal were triggered by the nucleation of the transition in a single grain by an alpha particle. (author)

  9. Avalanche size scaling in sheared three-dimensional amorphous solid

    DEFF Research Database (Denmark)

    Bailey, Nicholas; Schiøtz, Jakob; Lemaître, A.

    2007-01-01

    We study the statistics of plastic rearrangement events in a simulated amorphous solid at T=0. Events are characterized by the energy release and the "slip volume", the product of plastic strain and system volume. Their distributions for a given system size L appear to be exponential......, but a characteristic event size cannot be inferred, because the mean values of these quantities increase as L-alpha with alpha similar to 3/2. In contrast with results obtained in 2D models, we do not see simply connected avalanches. The exponent suggests a fractal shape of the avalanches, which is also evidenced...

  10. Analysis of avalanche risk factors in backcountry terrain based on usage frequency and accident data in Switzerland

    Science.gov (United States)

    Techel, F.; Zweifel, B.; Winkler, K.

    2015-09-01

    Recreational activities in snow-covered mountainous terrain in the backcountry account for the vast majority of avalanche accidents. Studies analyzing avalanche risk mostly rely on accident statistics without considering exposure (or the elements at risk), i.e., how many, when and where people are recreating, as data on recreational activity in the winter mountains are scarce. To fill this gap, we explored volunteered geographic information on two social media mountaineering websites - bergportal.ch and camptocamp.org. Based on these data, we present a spatiotemporal pattern of winter backcountry touring activity in the Swiss Alps and compare this with accident statistics. Geographically, activity was concentrated in Alpine regions relatively close to the main Swiss population centers in the west and north. In contrast, accidents occurred equally often in the less-frequented inner-alpine regions. Weekends, weather and avalanche conditions influenced the number of recreationists, while the odds to be involved in a severe avalanche accident did not depend on weekends or weather conditions. However, the likelihood of being involved in an accident increased with increasing avalanche danger level, but also with a more unfavorable snowpack containing persistent weak layers (also referred to as an old snow problem). In fact, the most critical situation for backcountry recreationists and professionals occurred on days and in regions when both the avalanche danger was critical and when the snowpack contained persistent weak layers. The frequently occurring geographical pattern of a more unfavorable snowpack structure also explains the relatively high proportion of accidents in the less-frequented inner-alpine regions. These results have practical implications: avalanche forecasters should clearly communicate the avalanche danger and the avalanche problem to the backcountry user, particularly if persistent weak layers are of concern. Professionals and recreationists, on the

  11. Fractal multiplication of electron avalanches and streamers: new mechanism of electrical breakdown?

    International Nuclear Information System (INIS)

    Ficker, T

    2007-01-01

    Long-lasting problems concerning peculiar statistical behaviour of high populated electron avalanches have been analysed. These avalanches are precursors of streamer breakdown in gases. The present streamer theory fails in explaining severe systematic deviations from the Furry statistics that is believed to be a governing statistical law. Such a deviated behaviour of high populated avalanches seems to be a consequence of a special pre-breakdown mechanism that is rather different from that known so far in discharge physics. This analysis tends towards formulating a modified theoretical concept supplementing the streamer theory by a new statistical view of pre-streamer states. The correctness of the concept is corroborated by a series of experiments

  12. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  13. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  14. Volcanic avalanche fault zone with pseudotachylite and gouge in French Massif Central

    Science.gov (United States)

    Bernard, Karine; van Wyk de Vries, Benjamin

    2017-11-01

    Structures and textures with sedimentological variations at different scales of the lithofacies assemblage help us to constrain the basal kinematic transition from non-depositional to depositional conditions during volcanic avalanche emplacement. In the well-exposed impact-sheared contact along volcanic avalanche fault zone in the French Massif Central, we observe how the granular textures of the pseudotachylite and fault gouge have recorded the propagation of shock wave with granular oscillatory stress. Sequential events of basal aggradation along avalanche fault zone have been established related to fractal D-values, temperature pressure regime and oscillatory stress during slow wave velocity. A typical lithofacies assemblage with a reverse grading shows the pseudotachylite and fault gouge. A cataclastic gradient is characterised by the fractal D-values from 2.7 in jigsaw breccias with pseudotachylite partial melt, to 2.6 in the polymodal gouge. Shock, brecciation and comminution produce cataclastic shear bands in the pseudotachylite and quartz microstructures along the basal contact of the volcanic debris-avalanche deposit. Gouge microstructures show granular segregation, cataclasis with antithetic rotational Riedel shear, and an arching effect between the Riedel shear bands. X-ray microtomography provided 3D microfabrics along the clastic vein in the sandy-gouge. From the available statistical dataset, a few equations have been developed implicating the same cataclastic origin with a co-genetic evolution of lithofacies. An impact wave during primary shear propagation may contribute to produce hydroclastic matrix, pseudotachylite partial melt and proximal gouge thixotropy with v 50m/s and a T < 654 °C. The interseismic period with oscillatory stress is related to crushed clasts and basaltic melt around 800 °C, Riedel shear bands with granular segregation along the fault gouge. The secondary shock by matrix-rich avalanche (ΔP = 10GPa, T ≥ 1000-1500

  15. Numerical analysis of three-colour HgCdTe detectors

    Science.gov (United States)

    Jóźwikowski, K.; Rogalski, A.

    2007-12-01

    The performance of three-colour HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-colour detectors with two back-to-back junctions, three-colour structure contains an absorber of intermediate wavelength placed between two junctions and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Three-detector structures with different localizations of separating barriers are analyzed. The calculation results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. It is shown that the performance of the detector is critically dependent on the barrier’s doping level and position in relation to the junction. This behaviour is serious disadvantage of the considered three-colour detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.

  16. Prediction of picosecond voltage collapse and electromagnetic wave generation in gas avalanche switches

    International Nuclear Information System (INIS)

    Mayhall, D.J.; Yee, J.H.; Duong-Van, M.; Villa, F.

    1988-01-01

    A picosecond speed switch, the Gas Avalanche Switch (GAS), has been proposed for GeV linear accelerators. The medium is gas at high pressure (100 - 700 atm). An avalanche discharge is induced between pulse-charged high voltage electrodes by electron deposition from a fast laser pulse. Avalanche electrons move to the positive electrode, causing the applied voltage to collapse in picoseconds. A two-dimensional (2D) electromagnetic electron fluid computer code calculates the avalanche evolution and voltage collapse in air for an infinite parallel plate capacitor with a 0.1 mm spacing. Calculations are done for an accelerator switch geometry consisting of a 0.7 mm wide by 0.8 mm high, rectangular, high voltage center electrode (CE) between the grounded plates of a parallel plate line of 2 mm spacing. Several variations of CE elevation and initial electron deposition are investigated The 2D character of the outgoing TEM waves is shown

  17. Development of a gamma dosimeter using a photodiode; Desenvolvimento de um dosimetro para radiacao gama utilizando fotodiodo

    Energy Technology Data Exchange (ETDEWEB)

    Melo, F.A. de

    1988-05-01

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab.

  18. Pin-photodiode array for the measurement of fan-beam energy and air kerma distributions of X-ray CT scanners.

    Science.gov (United States)

    Haba, Tomonobu; Koyama, Shuji; Aoyama, Takahiko; Kinomura, Yutaka; Ida, Yoshihiro; Kobayashi, Masanao; Kameyama, Hiroshi; Tsutsumi, Yoshinori

    2016-07-01

    Patient dose estimation in X-ray computed tomography (CT) is generally performed by Monte Carlo simulation of photon interactions within anthropomorphic or cylindrical phantoms. An accurate Monte Carlo simulation requires an understanding of the effects of the bow-tie filter equipped in a CT scanner, i.e. the change of X-ray energy and air kerma along the fan-beam arc of the CT scanner. To measure the effective energy and air kerma distributions, we devised a pin-photodiode array utilizing eight channels of X-ray sensors arranged at regular intervals along the fan-beam arc of the CT scanner. Each X-ray sensor consisted of two plate type of pin silicon photodiodes in tandem - front and rear photodiodes - and of a lead collimator, which only allowed X-rays to impinge vertically to the silicon surface of the photodiodes. The effective energy of the X-rays was calculated from the ratio of the output voltages of the photodiodes and the dose was calculated from the output voltage of the front photodiode using the energy and dose calibration curves respectively. The pin-photodiode array allowed the calculation of X-ray effective energies and relative doses, at eight points simultaneously along the fan-beam arc of a CT scanner during a single rotation of the scanner. The fan-beam energy and air kerma distributions of CT scanners can be effectively measured using this pin-photodiode array. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  19. Infrasound array criteria for automatic detection and front velocity estimation of snow avalanches: towards a real-time early-warning system

    Science.gov (United States)

    Marchetti, E.; Ripepe, M.; Ulivieri, G.; Kogelnig, A.

    2015-11-01

    Avalanche risk management is strongly related to the ability to identify and timely report the occurrence of snow avalanches. Infrasound has been applied to avalanche research and monitoring for the last 20 years but it never turned into an operational tool to identify clear signals related to avalanches. We present here a method based on the analysis of infrasound signals recorded by a small aperture array in Ischgl (Austria), which provides a significant improvement to overcome this limit. The method is based on array-derived wave parameters, such as back azimuth and apparent velocity. The method defines threshold criteria for automatic avalanche identification by considering avalanches as a moving source of infrasound. We validate the efficiency of the automatic infrasound detection with continuous observations with Doppler radar and we show how the velocity of a snow avalanche in any given path around the array can be efficiently derived. Our results indicate that a proper infrasound array analysis allows a robust, real-time, remote detection of snow avalanches that is able to provide the number and the time of occurrence of snow avalanches occurring all around the array, which represent key information for a proper validation of avalanche forecast models and risk management in a given area.

  20. Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays.

    Science.gov (United States)

    Schuster, Jonathan; Bellotti, Enrico

    2013-06-17

    We have investigated crosstalk in HgCdTe photovoltaic pixel arrays employing a photon trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. We have found that, compared to non-PT pixel arrays with similar geometry, the array employing the PT structure has a slightly higher optical crosstalk. However, when the total crosstalk is evaluated, the presence of the PT region drastically reduces the total crosstalk; making the use of the PT structure not only useful to obtain broadband operation, but also desirable for reducing crosstalk in small pitch detector arrays.

  1. High-Operating Temperature HgCdTe: A Vision for the Near Future

    Science.gov (United States)

    Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

    2016-09-01

    We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the

  2. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  3. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zakgeim, A. L. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation); Il’inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A., E-mail: ioffeled@mail.ru; Matveev, B. A.; Remennyy, M. A.; Stus’, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Cherniakov, A. E. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation)

    2017-02-15

    The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ{sub max} = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.

  4. Spatially Extended Avalanches in a Hysteretic Capillary Condensation System: Superfluid 4He in Nuclepore

    International Nuclear Information System (INIS)

    Lilly, M.P.; Wootters, A.H.; Hallock, R.B.

    1996-01-01

    Capacitive studies of hysteretic capillary condensation of superfluid 4 He in Nuclepore have shown that the initial draining of the pores occurs over a small range of the chemical potential with avalanches present as groups of pores drain. In the work reported here, the avalanches in this system are shown to be nonlocal events which involve pores distributed at low density across the entire sample. The nonlocal avalanche behavior is shown to be enabled by the presence of a superfluid film connection among the pores. copyright 1996 The American Physical Society

  5. On the relativistic large-angle electron collision operator for runaway avalanches in plasmas

    Science.gov (United States)

    Embréus, O.; Stahl, A.; Fülöp, T.

    2018-02-01

    Large-angle Coulomb collisions lead to an avalanching generation of runaway electrons in a plasma. We present the first fully conservative large-angle collision operator, derived from the relativistic Boltzmann operator. The relation to previous models for large-angle collisions is investigated, and their validity assessed. We present a form of the generalized collision operator which is suitable for implementation in a numerical kinetic equation solver, and demonstrate the effect on the runaway-electron growth rate. Finally we consider the reverse avalanche effect, where runaways are slowed down by large-angle collisions, and show that the choice of operator is important if the electric field is close to the avalanche threshold.

  6. Reducing financial avalanches by random investments

    Science.gov (United States)

    Biondo, Alessio Emanuele; Pluchino, Alessandro; Rapisarda, Andrea; Helbing, Dirk

    2013-12-01

    Building on similarities between earthquakes and extreme financial events, we use a self-organized criticality-generating model to study herding and avalanche dynamics in financial markets. We consider a community of interacting investors, distributed in a small-world network, who bet on the bullish (increasing) or bearish (decreasing) behavior of the market which has been specified according to the S&P 500 historical time series. Remarkably, we find that the size of herding-related avalanches in the community can be strongly reduced by the presence of a relatively small percentage of traders, randomly distributed inside the network, who adopt a random investment strategy. Our findings suggest a promising strategy to limit the size of financial bubbles and crashes. We also obtain that the resulting wealth distribution of all traders corresponds to the well-known Pareto power law, while that of random traders is exponential. In other words, for technical traders, the risk of losses is much greater than the probability of gains compared to those of random traders.

  7. Radiated power measurement with AXUV photodiodes in EAST tokamak

    International Nuclear Information System (INIS)

    Duan Yanmin; Hu Liqun; Du Wei; Mao Songtao; Chen Kaiyun; Zhang Jizhong

    2013-01-01

    The fast bolometer diagnostic system for absolute radiated power measurement on EAST tokamak is introduced, which is based on the absolute extreme ultraviolet (AXUV) photodiodes. The relative calibration of AXUV detectors is carried out using X-ray tube and standard luminance source in order to evaluate the sensitivity degradation caused by cumulative radiation damage during experiments. The calibration result shows a 23% sensitivity decrease in the X-ray range for the detector suffering ∼27000 discharges, but the sensitivity for the visible light changes little. The radiated power measured by AXUV photodiodes is compared with that measured by resistive bolometer. The total radiated power in main plasma deduced from AXUV detector is lower a factor of 1∼4 than that deduced from resistive bolometer. Some typical measurement results are also shown in this article. (author)

  8. Avalanches in Mn12-Acetate: ``Magnetic Burning"

    Science.gov (United States)

    McHugh, Sean; Suzuki, Y.; Graybill, D.; Sarachik, M. P.; Avraham, N.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Chakov, N. E.; Christou, G.

    2006-03-01

    From local time-resolved measurements of fast reversal of the magnetization in single crystals of the molecular magnet Mn12-acetate, we have shown[1] that the magnetization avalanche spreads as a narrow interface that propagates through the crystal at a constant velocity roughly two orders of magnitude smaller than the speed of sound. This phenomenon is closely analogous to the propagation of a flame front (deflagration) through a flammable chemical substance. The propagation speed of the avalanche depends on the energy stored in each molecule, which can be controlled and tuned using an external magnetic field. We report studies of propagation speed with different external fields in Mn12-acetate. [1] Yoko Suzuki, M.P. Sarachik, E.M. Chudnovsky, S. McHugh, R. Gonzalez-Rubio, N. Avraham, Y. Myasoedov, H. Shtrikman, E. Zeldov, N.E. Chakov and G. Christou, Phys. Rev. Lett. 95, 147201 (2005).

  9. Using GIS and Google Earth for the creation of the Going-to-the-Sun Road Avalanche Atlas, Glacier National Park, Montana, USA

    Science.gov (United States)

    Peitzsch, Erich H.; Fagre, Daniel B.; Dundas, Mark

    2010-01-01

    Snow avalanche paths are key geomorphologic features in Glacier National Park, Montana, and an important component of mountain ecosystems: they are isolated within a larger ecosystem, they are continuously disturbed, and they contain unique physical characteristics (Malanson and Butler, 1984). Avalanches impact subalpine forest structure and function, as well as overall biodiversity (Bebi et al., 2009). Because avalanches are dynamic phenomena, avalanche path geometry and spatial extent depend upon climatic regimes. The USGS/GNP Avalanche Program formally began in 2003 as an avalanche forecasting program for the spring opening of the ever-popular Going-to-the-Sun Road (GTSR), which crosses through 37 identified avalanche paths. Avalanche safety and forecasting is a necessary part of the GTSR spring opening procedures. An avalanche atlas detailing topographic parameters and oblique photographs was completed for the GTSR corridor in response to a request from GNP personnel for planning and resource management. Using ArcMap 9.2 GIS software, polygons were created for every avalanche path affecting the GTSR using aerial imagery, field-based observations, and GPS measurements of sub-meter accuracy. Spatial attributes for each path were derived within the GIS. Resulting products include an avalanche atlas book for operational use, a geoPDF of the atlas, and a Google Earth flyover illustrating each path and associated photographs. The avalanche atlas aids park management in worker safety, infrastructure planning, and natural resource protection by identifying avalanche path patterns and location. The atlas was created for operational and planning purposes and is also used as a foundation for research such as avalanche ecology projects and avalanche path runout modeling.

  10. The development of structures in analogue and natural debris avalanches

    Science.gov (United States)

    Paguican, Engielle Mae; van Wyk de Vries, Benjamin; Mahar Francisco Lagmay, Alfredo; Grosse, Pablo

    2010-05-01

    All types of rockslide-debris avalanches present a plethora of internal structures that are also well observed on the surface. Many of these are seen as faults and folds that can be used to determine deformation history and kinematics. We present two sets of simple and well-constrained experiments of reduced basal friction laboratory rockslides, equivalent to a highly deformed simple shear layer, with plug-flow. These follow the original ramp-slide work of Shea and van Wyk de Vries (Geosphere, 2008). The experiments used a curved ramp where materials accelerate until reaching a gently-sloped depositional surface and a constantly inclined ramp with a more regular slope and longer slides. A detailed description of deposit structures, their sequential formation and morphology is then used to investigate the transport type and deformation chronology from slide initiation to runout stopping of avalanches. Results using a curved ramp show accumulation and thickening at where the slope decreases. The thickened mass then further remobilises and advances by secondary collapse of the mass. Such a stop-start process may be important in many mountainous avalanches where there are rapid changes in slope. The constantly inclined ramp shows shearing and extensional structures at the levees and a set of compression and extension structures in the middle. We noted that frontal accumulation during flow occurs as materials at the front move slower relative to those in the medial and proximal zones. This also leads to secondary frontal collapse, and helps to maintain a thicker mass that can flow further. Descriptions and analyses of these structures are then applied to the kinematics and dynamics of natural examples. We study the 2006 Guinsaugon Rockslide event in the Philippines and find that frontal accumulation and secondary avalanching had also occurred and were important in determining the distribution and runout of the mass. Frontal bulking and collapse may also have occurred at

  11. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  12. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

    2017-08-01

    In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  13. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-11-15

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

  14. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    International Nuclear Information System (INIS)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  15. Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

    NARCIS (Netherlands)

    Agarwal, V.; Dutta, S; Annema, AJ; Hueting, RJE; Steeneken, P.G.; Nauta, B

    2017-01-01

    This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant

  16. Multiwire proportional chamber and multistage avalanche chamber with low concentration photoionization gas

    International Nuclear Information System (INIS)

    Zhao Pingde; Xu Zhiqing; Tang Xiaowei

    1986-01-01

    The characteristics of multiwire proportional chamber and multistage avalanche chamber filled with argon and photoionization gas (C 2 H 5 ) 3 N were measured. The spatial resolution curves and output pulse height spectra were measured as well. Low concentration (C 2 H 5 ) 3 N can play an effective part in quenching. At very low concentration, the phenomena of avalanche transverse expansion was observed obviously

  17. Tunneling Current Probe for Noncontract Wafer-Level Photodiode Array Testing

    National Research Council Canada - National Science Library

    Verdun, Horacio

    1999-01-01

    The Tunneling Current Probe (TCP) is an automated picometer-sensitive proximity sensor and current measurement system which measures the current through a photodiode detector array element by establishing a tunneling current...

  18. The Vaigat Rock Avalanche Laboratory, west-central Greenland

    Science.gov (United States)

    Dunning, S.; Rosser, N. J.; Szczucinski, W.; Norman, E. C.; Benjamin, J.; Strzelecki, M.; Long, A. J.; Drewniak, M.

    2013-12-01

    Rock avalanches have unusually high mobility and pose both an immediate hazard, but also produce far-field impacts associated with dam breach, glacier collapse and where they run-out into water, tsunami. Such secondary hazards can often pose higher risks than the original landslide. The prediction of future threats posed by potential rock avalanches is heavily reliant upon understanding of the physics derived from an interpretation of deposits left by previous events, yet drawing comparisons between multiple events is normally challenging as interactions with complex mountainous terrain makes deposits from each event unique. As such numerical models and the interpretation of the underlying physics which govern landslide mobility is commonly case-specific and poorly suited to extrapolation beyond the single events the model is tuned to. Here we present a high-resolution LiDAR and hyperspectral dataset captured across a unique cluster of large rock avalanche source areas and deposits in the Vaigat straight, west central Greenland. Vaigat offers the unprecedented opportunity to model a sample of > 15 rock avalanches of various age sourced from an 80 km coastal escarpment. At Vaigat many of the key variables (topography, geology, post-glacial history) are held constant across all landslides providing the chance to investigate the variations in dynamics and emplacement style related to variable landslide volume, drop-heights, and thinning/spreading over relatively simple, unrestricted run-out zones both onto land and into water. Our data suggest that this region represents excellent preservation of landslide deposits, and hence is well suited to calibrate numerical models of run out dynamics. We use this data to aid the interpretation of deposit morphology, structure lithology and run-out characteristics in more complex settings. Uniquely, we are also able to calibrate our models using a far-field dataset of well-preserved tsunami run-up deposits, resulting from the 21

  19. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    Science.gov (United States)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  20. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Uk; Cho, Min-Sik; Lee, Dae-Hee; Yoo, Hyun-Jun; Kim, Myung-Soo; Bae, Jun-Hyung; Kim, Hyoung-Taek; Kim, Jong-Yul; Kim, Hyun-Duk; Cho, Gyu-Seong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2012-05-15

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  1. A method to harness global crowd-sourced data to understand travel behavior in avalanche terrain.

    Science.gov (United States)

    Hendrikx, J.; Johnson, J.

    2015-12-01

    To date, most studies of the human dimensions of decision making in avalanche terrain has focused on two areas - post-accident analysis using accident reports/interviews and, the development of tools as decision forcing aids. We present an alternate method using crowd-sourced citizen science, for understanding decision-making in avalanche terrain. Our project combines real-time GPS tracking via a smartphone application, with internet based surveys of winter backcountry users as a method to describe and quantify travel practices in concert with group decision-making dynamics, and demographic data of participants during excursions. Effectively, we use the recorded GPS track taken within the landscape as an expression of the decision making processes and terrain usage by the group. Preliminary data analysis shows that individual experience levels, gender, avalanche hazard, and group composition all influence the ways in which people travel in avalanche terrain. Our results provide the first analysis of coupled real-time GPS tracking of the crowd while moving in avalanche terrain combined with psychographic and demographic correlates. This research will lead to an improved understanding of real-time decision making in avalanche terrain. In this paper we will specifically focus on the presentation of the methods used to solicit, and then harness the crowd to obtain data in a unique and innovative application of citizen science where the movements within the terrain are the desired output data (Figure 1). Figure 1: Example GPS tracks sourced from backcountry winter users in the Teton Pass area (Wyoming), from the 2014-15 winter season, where tracks in red represent those recorded as self-assessed experts (as per our survey), and where tracks in blue represent those recorded as self-assessed intermediates. All tracks shown were obtained under similar avalanche conditions. Statistical analysis of terrain metrics showed that the experts used steeper terrain than the

  2. Gas sampling calorimeter studies in proportional, saturated avalanche, and streamer modes

    International Nuclear Information System (INIS)

    Atac, M.; Bedeschi, F.; Yoh, J.; Morse, R.; Procario, M.

    1982-01-01

    Recently, satisfactory new results were obtained at SLAC from gas sampling calorimeters running in the saturated avalanche mode within the energy range of 1.5 to 17.5 GeV. To study the higher energy behavior of this mode, more tests were carried out in the M4 beamline at Fermilab. This paper contains results obtained from the MAC prototype electromagnetic and hadronic calorimeters running in the proportional, saturated avalanche, and the streamer regions for energies between 12 and 150 GeV

  3. A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

    International Nuclear Information System (INIS)

    Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

    1993-01-01

    The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

  4. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B., E-mail: verma@nist.gov; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2016-03-28

    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  5. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Directory of Open Access Journals (Sweden)

    Zhang Teng-Fei

    2016-11-01

    Full Text Available In this study, we present a simple ultraviolet (UV light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  6. Compact multispectral photodiode arrays using micropatterned dichroic filters

    Science.gov (United States)

    Chandler, Eric V.; Fish, David E.

    2014-05-01

    The next generation of multispectral instruments requires significant improvements in both spectral band customization and portability to support the widespread deployment of application-specific optical sensors. The benefits of spectroscopy are well established for numerous applications including biomedical instrumentation, industrial sorting and sensing, chemical detection, and environmental monitoring. In this paper, spectroscopic (and by extension hyperspectral) and multispectral measurements are considered. The technology, tradeoffs, and application fits of each are evaluated. In the majority of applications, monitoring 4-8 targeted spectral bands of optimized wavelength and bandwidth provides the necessary spectral contrast and correlation. An innovative approach integrates precision spectral filters at the photodetector level to enable smaller sensors, simplify optical designs, and reduce device integration costs. This method supports user-defined spectral bands to create application-specific sensors in a small footprint with scalable cost efficiencies. A range of design configurations, filter options and combinations are presented together with typical applications ranging from basic multi-band detection to stringent multi-channel fluorescence measurement. An example implementation packages 8 narrowband silicon photodiodes into a 9x9mm ceramic LCC (leadless chip carrier) footprint. This package is designed for multispectral applications ranging from portable color monitors to purpose- built OEM industrial and scientific instruments. Use of an eight-channel multispectral photodiode array typically eliminates 10-20 components from a device bill-of-materials (BOM), streamlining the optical path and shrinking the footprint by 50% or more. A stepwise design approach for multispectral sensors is discussed - including spectral band definition, optical design tradeoffs and constraints, and device integration from prototype through scalable volume production

  7. Oscillatory regime of avalanche particle detectors

    International Nuclear Information System (INIS)

    Lukin, K.A.; Cerdeira, H.A.; Colavita, A.A.

    1995-06-01

    We describe the model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. We show that this detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out. (author). 15 refs, 7 figs

  8. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    International Nuclear Information System (INIS)

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-01-01

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  9. Electrical crosstalk in front-illuminated photodiode array with different guard ring designs for medical CT applications

    International Nuclear Information System (INIS)

    Ji Fan; Juntunen, Mikko; Hietanen, Iiro

    2009-01-01

    This paper presents electrical crosstalk studies on front-illuminated photodiode arrays for medical computed tomography (CT) applications. Crosstalk is an important factor to the system noise and image quality. The electrical crosstalk depends on silicon substrate properties and photodiode structures. The photodiode samples employed in this paper are planar processed on high-resistivity n-type silicon substrate, resulting in a p+/n-/n+ diode structure. Two types of guard ring structures are designed and applied to the same geometry of two-dimensional photodiode arrays. One structure is an n guard ring in the gap area between pixels, and the other structure is an additional p+ guard ring around each pixel together with the n guard ring. A 10 μm light spot with wavelength of 525 nm is used to scan across the surface of the photodiode array in the electrical crosstalk measurements. The electrical currents of two neighbor pixels are measured and the results are compared between two guard ring designs. The design with the p+ guard ring structure gives better electrical crosstalk suppression. Moreover, the measurement results show much smaller influence on surrounding pixels with the p+ guard ring structure in the case of disconnected pixel. Besides the electrical crosstalk, the light sensitivity within the gap area is also discussed between two guard ring designs.

  10. Study of a PIN photodiode as an ionizing radiation detector for aerospace use

    International Nuclear Information System (INIS)

    Nogueira, S.F.L.; Claro, L.H.; Santos, J.A.; Junior, J.R.; Federico, C.A.

    2017-01-01

    This work aims to study the use of the COTS PIN photodiode with an active area of 7.5 mm 2 as an ionizing radiation detector. The tests were performed with a 60 Co source and with low activity radioisotopic sources of 60 Co, 152 Eu, 137 Cs and 241 Am. The results were obtained by analyzing the current response generated by the photodiodes as a function of an attenuated dose rate in silicon in the range of 0.55 to 11.54 Gy / h

  11. Smartphone applications for communicating avalanche risk information - a review of existing practices

    Science.gov (United States)

    Charrière, M. K. M.; Bogaard, T. A.

    2015-11-01

    Every year, in all mountainous regions, people are victims of avalanches. One way to decrease those losses is believed to be informing about danger levels. The paper presents a study on current practices in the development of smartphones applications that are dedicated to avalanche risk communication. The analysis based on semi-structured interviews with developers of smartphone apps highlights the context of their development, how choices of content and visualization were made as well as how their effectiveness is evaluated. It appears that although the communicators agree on the message to disseminate, its representation triggers debate. Moreover, only simple evaluation processes are conducted but there is a clear awareness that further scientific efforts are needed to analyze the effectiveness of the smartphone apps. Finally, the current or planned possibility for non-experts users to report feedback on the snow and avalanches conditions open the doors to a transition of these apps from one-way communication tools to two-ways communication platforms. This paper also indicates the remaining challenges that avalanche risk communication is facing, although it is disputably the most advanced and standardized practice compared to other natural hazards. Therefore, this research is of interest for the entire field of natural hazards related risk communication.

  12. Performances of a HGCDTE APD based direct detection lidar at 2 μm. Application to dial measurements

    Science.gov (United States)

    Gibert, Fabien; Dumas, Arnaud; Rothman, Johan; Edouart, Dimitri; Cénac, Claire; Pellegrino, Jessica

    2018-04-01

    A lidar receiver with a direct detection chain adapted to a HgCdTe APD based detector with electric cooling is associated to a 2.05 μm Ho :YLF pulsed dual wavelength single mode transmitter to provide the first atmospheric lidar measurements using this technology. Experiments confirm the outstanding sensitivity of the detector and hightligth its huge potential for DIAL measurements of trace gas (CO2 and H2O) in this spectral domain. Performances of coherent vs direct detection at 2.05 μm is assessed.

  13. Performances of a HGCDTE APD based direct detection lidar at 2 μm. Application to dial measurements

    Directory of Open Access Journals (Sweden)

    Gibert Fabien

    2018-01-01

    Full Text Available A lidar receiver with a direct detection chain adapted to a HgCdTe APD based detector with electric cooling is associated to a 2.05 μm Ho :YLF pulsed dual wavelength single mode transmitter to provide the first atmospheric lidar measurements using this technology. Experiments confirm the outstanding sensitivity of the detector and hightligth its huge potential for DIAL measurements of trace gas (CO2 and H2O in this spectral domain. Performances of coherent vs direct detection at 2.05 μm is assessed.

  14. Study of an avalanche-mode resistive plate chamber

    International Nuclear Information System (INIS)

    Ying, J.; Ban, Y.; Liu, H.T.; Zhu, Z.M.; Zhu, Z.Y.; Chen, T.; Ma, J.G.; Ye, Y.L.

    2000-01-01

    Resistive plate chambers (RPCs) are widely used to detect high-energy charged particles, especially muons, due to the high gain, moderate time and spatial resolution, simple design and low cost of these detectors. While the simple streamer mode is adequate for cosmic-ray and low-rate accelerator experiments, the avalanche mode is required for high-rate experiments such as CMS at LHC. In this paper construction of a medium-sized double-gap RPC made of Chinese materials is reported. The experimental set-up of cosmic-ray and muon beam tests are introduced. The avalanche mode was clearly observed. Good efficiency and time resolution were obtained from the beam test at CERN under normal irradiation conditions. At very high radiation background the chamber efficiency decreases, indicating the necessity to change the resistivity value of the Chinese bakelites. (author)

  15. Parameters of an avalanche of runaway electrons in air under atmospheric pressure

    Science.gov (United States)

    Oreshkin, E. V.

    2018-01-01

    The features of runaway-electron avalanches developing in air under atmospheric pressures are investigated in the framework of a three-dimensional numerical simulation. The simulation results indicate that an avalanche of this type can be characterized, besides the time and length of its exponential growth, by the propagation velocity and by the average kinetic energy of the runaway electrons. It is shown that these parameters obey the similarity laws applied to gas discharges.

  16. Enhanced numerical analysis of three-color HgCdTe detectors

    Science.gov (United States)

    Jóźwikowski, K.; Rogalski, A.

    2007-04-01

    The performance of three-color HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-color detectors with two back-to-back junctions, three-color structure contain an absorber of intermediate wavelength placed between two junctions, and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. Three detector structures with different localizations of separating barriers are analyzed. The calculations results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. It is shown that the performance of the detector is critically dependent on the barrier's doping level and position in relation to the junction. This behavior is serious disadvantage of the considered three color detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.

  17. Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films.

    Science.gov (United States)

    Huang, Wei; Chakrabartty, Joyprokash; Harnagea, Catalin; Gedamu, Dawit; Ka, Ibrahima; Chaker, Mohamed; Rosei, Federico; Nechache, Riad

    2018-04-18

    Perovskite multiferroic oxides are promising materials for the realization of sensitive and switchable photodiodes because of their favorable band gap (heterojunction was fabricated by pulsed laser deposition. The heterojunction photodiode exhibits a large ideality factor ( n = ∼5.0) and a response time as fast as 68 ms, thanks to the effective charge carrier transport and collection at the BFCO/SRO interface. The diode can switch direction when the electric polarization is reversed by an external voltage pulse. The time-resolved photoluminescence decay of the device measured at ∼500 nm demonstrates an ultrafast charge transfer (lifetime = ∼6.4 ns) in BFCO/SRO heteroepitaxial structures. The estimated responsivity value at 500 nm and zero bias is 0.38 mA W -1 , which is so far the highest reported for any FE thin film photodiode. Our work highlights the huge potential for using multiferroic oxides to fabricate highly sensitive and switchable photodiodes.

  18. Universal Critical Dynamics in High Resolution Neuronal Avalanche Data

    Science.gov (United States)

    Friedman, Nir; Ito, Shinya; Brinkman, Braden A. W.; Shimono, Masanori; DeVille, R. E. Lee; Dahmen, Karin A.; Beggs, John M.; Butler, Thomas C.

    2012-05-01

    The tasks of neural computation are remarkably diverse. To function optimally, neuronal networks have been hypothesized to operate near a nonequilibrium critical point. However, experimental evidence for critical dynamics has been inconclusive. Here, we show that the dynamics of cultured cortical networks are critical. We analyze neuronal network data collected at the individual neuron level using the framework of nonequilibrium phase transitions. Among the most striking predictions confirmed is that the mean temporal profiles of avalanches of widely varying durations are quantitatively described by a single universal scaling function. We also show that the data have three additional features predicted by critical phenomena: approximate power law distributions of avalanche sizes and durations, samples in subcritical and supercritical phases, and scaling laws between anomalous exponents.

  19. A micropixel avalanche phototransistor for time of flight measurements

    Energy Technology Data Exchange (ETDEWEB)

    Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Institute of Radiation Problems, Baku (Azerbaijan); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Institute of Radiation Problems, Baku (Azerbaijan); Ahmadov, F. [National Nuclear Research Center, Baku (Azerbaijan); Ahmadov, G. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Abdullayev, K. [National Aviation Academy, Baku (Azerbaijan); Akberov, R. [National Nuclear Research Center, Baku (Azerbaijan); Institute of Radiation Problems, Baku (Azerbaijan); Heydarov, N. [National Nuclear Research Center, Baku (Azerbaijan); Madatov, R. [Institute of Radiation Problems, Baku (Azerbaijan); Mukhtarov, R. [National Aviation Academy, Baku (Azerbaijan); Nazarov, M.; Valiyev, R. [National Nuclear Research Center, Baku (Azerbaijan)

    2017-02-11

    This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs. - Highlights: • A new photo detector – micropixel avalanche phototransistor was developed. • MAPT has a matrix of microtransistors with fast output. • In these modules the duration of the leading edge of the signal from the photodetectors are not worse than 50–100 ps.

  20. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

    2015-01-01

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

  1. Radiation tests of photodiodes for the ATLAS SCT and PIXEL opto- links

    CERN Document Server

    Hou, L S; Lee, S C; Su, D S; Teng, P K

    2005-01-01

    In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be used in the ATLAS semiconductor tracker have been irradiated with 1 MeV neutrons and 24 GeV protons with fluences up to an equivalent of $10^{15}$ 1 MeV neutrons (1,2) . In this work 30 MeV proton beams were used to irradiate Centronic and Truelight epitaxial Si PIN diodes with accumulated fluences of up to 2.1 multiplied by $10^{14}$-30 MeV p $cm^{-2}$, an equivalent of 5.7 multiplied by $10^{14} cm^{-2}$ 1 MeV neutrons, to reach the pixel radiation environment. The responsivity was measured with different levels of fluence in order to study the responsivity behaviour of two different types of photodiodes. The responsivity behaviour of these two photodiodes was similar: a linear degradation at large fluences, greater than $10^{14}$ 30 MeV p $cm^{-2}$, but with different slopes. The response of the Centronic PIN diode showed a degradation to 73% after a proton fluence of $10^{13}$ p $cm^{-2}$ of 30 MeV and a linear degradat...

  2. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Responses of the multi-photodiode readout

    International Nuclear Information System (INIS)

    Tamai, K.

    2000-01-01

    The responses for a signal in various configurations of photodiodes (PDs) and preamplifiers are analyzed by Laplace transformation. The electronic noise in the configuration is derived using the Fourier transformation. The responses and noise are obtained by an analogical extension of the impedance from a single-PD configuration to the multi-PD configuration; however, the noise is not so simple when connected in series. Using the results, we evaluate the energy resolution of the configurations. A series PD connection realizes a better resolution than a parallel connection in the fast shaping

  4. Positron camera with high-density avalanche chambers

    International Nuclear Information System (INIS)

    Manfrass, D.; Enghardt, W.; Fromm, W.D.; Wohlfarth, D.; Hennig, K.

    1988-01-01

    The results of an extensive investigation of the properties of high-density avalanche chambers (HIDAC) are presented. This study has been performed in order to optimize the layout of HIDAC detectors, since they are intended to be applied as position sensitive detectors for annihilation radiation in a positron emission tomograph being under construction. (author)

  5. Developing an Experimental Simulation Method for Rock Avalanches: Fragmentation Behavior of Brittle Analogue Material

    Science.gov (United States)

    Thordén Haug, Øystein; Rosenau, Matthias; Leever, Karen; Oncken, Onno

    2013-04-01

    Gravitational mass movement on earth and other planets show a scale dependent behavior, of which the physics is not fully understood. In particular, the runout distance for small to medium sized landslides (volume dynamics control small and large landslides/rock avalanches. Several mechanisms have been proposed to explain this scale dependent behavior, but no consensus has been reached. Experimental simulations of rock avalanches usually involve transport of loose granular material down a chute. Though such granular avalanche models provide important insights into avalanche dynamics, they imply that the material fully disintegrate instantaneously. Observations from nature, however, suggests that a transition from solid to "liquid" occurs over some finite distance downhill, critically controlling the mobility and energy budget of the avalanche. Few experimental studies simulated more realistically the material failing during sliding and those were realized in a labscale centrifuge, where the range of volumes/scales is limited. To develop a new modeling technique to study the scale dependent runout behavior of rock avalanches, we designed, tested and verified several brittle materials allowing fragmentation to occur under normal gravity conditions. According to the model similarity theory, the analogue material must behave dynamically similar to the rocks in natural rock avalanches. Ideally, the material should therefore deform in a brittle manner with limited elastic and ductile strains up to a certain critical stress, beyond which the material breaks and deforms irreversibly. According to scaling relations derived from dimensional analysis and for a model-to-prototype length ratio of 1/1000, the appropriate yield strength for an analogue material is in the order of 10 kPa, friction coefficient around 0.8 and stiffness in the order of MPa. We used different sand (garnet, quartz) in combination with different matrix materials (sugar, salt, starch, plaster) to cement

  6. A new solver for granular avalanche simulation: Indoor experiment verification and field scale case study

    Science.gov (United States)

    Wang, XiaoLiang; Li, JiaChun

    2017-12-01

    A new solver based on the high-resolution scheme with novel treatments of source terms and interface capture for the Savage-Hutter model is developed to simulate granular avalanche flows. The capability to simulate flow spread and deposit processes is verified through indoor experiments of a two-dimensional granular avalanche. Parameter studies show that reduction in bed friction enhances runout efficiency, and that lower earth pressure restraints enlarge the deposit spread. The April 9, 2000, Yigong avalanche in Tibet, China, is simulated as a case study by this new solver. The predicted results, including evolution process, deposit spread, and hazard impacts, generally agree with site observations. It is concluded that the new solver for the Savage-Hutter equation provides a comprehensive software platform for granular avalanche simulation at both experimental and field scales. In particular, the solver can be a valuable tool for providing necessary information for hazard forecasts, disaster mitigation, and countermeasure decisions in mountainous areas.

  7. Swedish skiers knowledge, experience and attitudes towards off-piste skiing and avalanches

    OpenAIRE

    Mårtensson, Stefan; Wikberg, Per-Olov; Palmgren, Petter

    2013-01-01

    The winter of 2012/2013 was the most accident-prone season in the Swedish avalanche history with a total of seven dead Swedes. In April 2013 the Swedish Mountain Safety Council initiated a web-based survey aimed towards Swedish skiers. The aim was to identify the target group's knowledge, experience and attitudes towards off-piste skiing and avalanches. Respondents were asked to answer a total of 28 questions. 1047 Swedish off-piste skiers answered, and we analysed them in more detail. The Sw...

  8. Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

    Science.gov (United States)

    Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

    2018-02-01

    Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

  9. Analysis of the snow-atmosphere energy balance during wet-snow instabilities and implications for avalanche prediction

    Directory of Open Access Journals (Sweden)

    C. Mitterer

    2013-02-01

    Full Text Available Wet-snow avalanches are notoriously difficult to predict; their formation mechanism is poorly understood since in situ measurements representing the thermal and mechanical evolution are difficult to perform. Instead, air temperature is commonly used as a predictor variable for days with high wet-snow avalanche danger – often with limited success. As melt water is a major driver of wet-snow instability and snow melt depends on the energy input into the snow cover, we computed the energy balance for predicting periods with high wet-snow avalanche activity. The energy balance was partly measured and partly modelled for virtual slopes at different elevations for the aspects south and north using the 1-D snow cover model SNOWPACK. We used measured meteorological variables and computed energy balance and its components to compare wet-snow avalanche days to non-avalanche days for four consecutive winter seasons in the surroundings of Davos, Switzerland. Air temperature, the net shortwave radiation and the energy input integrated over 3 or 5 days showed best results in discriminating event from non-event days. Multivariate statistics, however, revealed that for better predicting avalanche days, information on the cold content of the snowpack is necessary. Wet-snow avalanche activity was closely related to periods when large parts of the snowpack reached an isothermal state (0 °C and energy input exceeded a maximum value of 200 kJ m−2 in one day, or the 3-day sum of positive energy input was larger than 1.2 MJ m−2. Prediction accuracy with measured meteorological variables was as good as with computed energy balance parameters, but simulated energy balance variables accounted better for different aspects, slopes and elevations than meteorological data.

  10. Neuronal avalanches and learning

    Energy Technology Data Exchange (ETDEWEB)

    Arcangelis, Lucilla de, E-mail: dearcangelis@na.infn.it [Department of Information Engineering and CNISM, Second University of Naples, 81031 Aversa (Italy)

    2011-05-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  11. Neuronal avalanches and learning

    International Nuclear Information System (INIS)

    Arcangelis, Lucilla de

    2011-01-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  12. Recalculation of an artificially released avalanche with SAMOS and validation with measurements from a pulsed Doppler radar

    Directory of Open Access Journals (Sweden)

    R. Sailer

    2002-01-01

    Full Text Available A joint experiment was carried out on 10 February 1999 by the Swiss Federal Institute for Snow and Avalanche Research (SFISAR and the Austrian Institute for Avalanche and Torrent Research (AIATR, of the Federal Office and Re-search Centre for Forests, BFW to measure forces and velocities at the full scale experimental site CRÊTA BESSE in VALLÉE DE LA SIONNE, Canton du Valais, Switzerland. A huge avalanche could be released artificially, which permitted extensive investigations (dynamic measurements, im-provement of measurement systems, simulation model verification, design of protective measures, etc.. The results of the velocity measurements from the dual frequency pulsed Doppler avalanche radar of the AIATR and the recalculation with the numerical simulation model SAMOS are explained in this paper.

  13. Plasma simulation of electron avalanche in a linear thyratron

    International Nuclear Information System (INIS)

    Kushner, M.J.

    1985-01-01

    Thyratrons typically operate at sufficiently small PD (pressure x electrode separation) that holdoff is obtained by operating on the near side of the Paschen curve, and by shielding the slot in the control grid so there is no straight line path for electrons to reach the anode from the cathode. Electron avalanche is initiated by pulsing the control grid to a high voltage. Upon collapse of voltage in the cathode-control grid space, the discharge is sustained by penetration of potential through the control grid slot into the cathode-control grid region. To better understand the electron avalanche process in multi-grid and slotted structures such as thyratrons, a plasma simulation code has been constructed. This effort is in support of a companion program in which a linear thyratron is being electrically and spectroscopically characterized

  14. Feasibility study into the use of silicon photo-diodes for the alignment of collimated X-rays on the SRS

    CERN Document Server

    Buffey, S G

    1999-01-01

    Dynamic alignment of beam on the crystal during data collection was studied. Development of silicon photo-diode detectors for the vacuum ultraviolet and soft X-ray spectral regions has led to the use of such devices as beam alignment tools for Protein Crystallography beamlines on the Synchrotron Radiation Source at Daresbury. Quadrant photo-diodes are used to provide signals proportional to the number of photons hitting each photo-diode, these are amplified, digitised and then summed to give the x-y position of the beam centre. (author)

  15. SPADs in CMOS : When Physics Meets Engineering

    NARCIS (Netherlands)

    Charbon, E.

    2011-01-01

    Single-photon avalanche diodes (SPADs) are a class of photodiodes biased above breakdown; in this mode of operation, known as Geiger mode, the devices are capable of detecting one or more photons with high timing accuracy. SPADs are useful in a variety of applications where picosecond timing

  16. A radiation detector fabricated from silicon photodiode.

    Science.gov (United States)

    Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

    1984-12-01

    A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

  17. Measurement of X-ray spectra by PIN photodiode: comparative study

    International Nuclear Information System (INIS)

    Costa, Paulo R.; Furquim, Tania A.C.; Herdade, Silvio B.

    1996-01-01

    Two different approaches for the evaluation of diagnostic X-ray spectra are presented : one based on a semiempirical model and other based on measurements using a silicon PIN photodiode. Measured and calculated values using typical kVp and filter combinations are compared

  18. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  19. Cryptographic robustness of practical quantum cryptography: BB84 key distribution protocol

    International Nuclear Information System (INIS)

    Molotkov, S. N.

    2008-01-01

    In real fiber-optic quantum cryptography systems, the avalanche photodiodes are not perfect, the source of quantum states is not a single-photon one, and the communication channel is lossy. For these reasons, key distribution is impossible under certain conditions for the system parameters. A simple analysis is performed to find relations between the parameters of real cryptography systems and the length of the quantum channel that guarantee secure quantum key distribution when the eavesdropper's capabilities are limited only by fundamental laws of quantum mechanics while the devices employed by the legitimate users are based on current technologies. Critical values are determined for the rate of secure real-time key generation that can be reached under the current technology level. Calculations show that the upper bound on channel length can be as high as 300 km for imperfect photodetectors (avalanche photodiodes) with present-day quantum efficiency (η ∼ 20%) and dark count probability (p dark ∼ 10 -7 )

  20. Simulation studies of crystal-photodetector assemblies for the Turkish accelerator center particle factory electromagnetic calorimeter

    Energy Technology Data Exchange (ETDEWEB)

    Kocak, F., E-mail: fkocak@uludag.edu.tr

    2015-07-01

    The Turkish Accelerator Center Particle Factory detector will be constructed for the detection of the produced particles from the collision of a 1 GeV electron beam against a 3.6 GeV positron beam. PbWO{sub 4} and CsI(Tl) crystals are considered for the construction of the electromagnetic calorimeter part of the detector. The generated optical photons in these crystals are detected by avalanche or PIN photodiodes. Geant4 simulation code has been used to estimate the energy resolution of the calorimeter for these crystal–photodiode assemblies.

  1. High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M=Ag, Cd and Ni) heterojunction based ultraviolet photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Echresh, Mohammad [Department of Physics, Sanati Hoveizeh University, Ahvaz (Iran, Islamic Republic of); Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-5818358183 Linköping (Sweden); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden)

    2016-10-15

    The thermal evaporation method has been used to deposit p-type NiO thin film, which was combined with hydrothermally grown n-type pure and M-doped ZnO nanorods (M=Ag, Cd and Ni) to fabricate a high performance p-n heterojunction ultraviolet photodiodes. The fabricated photodiodes show high rectification ratio and relatively low leakage current. The p-NiO/n-Zn{sub 0.94}Ag{sub 0.06}O heterojunction photodiode displays the highest photocurrent gain (~1.52×10{sup 4}), a photoresponsivity of ~4.48×10{sup 3} AW{sup −1} and a photosensitivity of ~13.56 compared with the other fabricated photodiodes. The predominated transport mechanisms of the p-n heterojunction ultraviolet photodiodes at low and high applied forward bias may be recombination-tunneling and space charge limited current, respectively.

  2. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  3. Digital system for acquiring signals from photodiode arrays. No. Program Element 2317-08-03

    International Nuclear Information System (INIS)

    Le Guen, M.; Meric, B.

    1981-01-01

    A model of circuit allowing the digitization and the memorization of signals coming from linear arrays of photodiodes have been realized. The authors first recall the organization and present in the second part some test results on experimental sites. The model consists of 1 - an acquisition, memorization and visualization card (AMV card) for the data from RETICON 121 photodiode strips, 2 - a series transfer card for the memorized data, and 3 - an interface and multiplexing card associated with a system using a 6800 microprocessor allowing the management of eight acquisition cards [fr

  4. Stability of the discretization of the electron avalanche phenomenon

    Energy Technology Data Exchange (ETDEWEB)

    Villa, Andrea, E-mail: andrea.villa@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy); Barbieri, Luca, E-mail: luca.barbieri@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy); Gondola, Marco, E-mail: marco.gondola@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy); Leon-Garzon, Andres R., E-mail: andresricardo.leon@polimi.it [CMIC Department “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133, Milano (Italy); Malgesini, Roberto, E-mail: roberto.malgesini@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy)

    2015-09-01

    The numerical simulation of the discharge inception is an active field of applied physics with many industrial applications. In this work we focus on the drift-reaction equation that describes the electron avalanche. This phenomenon is one of the basic building blocks of the streamer model. The main difficulty of the electron avalanche equation lies in the fact that the reaction term is positive when a high electric field is applied. It leads to exponentially growing solutions and this has a major impact on the behavior of numerical schemes. We analyze the stability of a reference finite volume scheme applied to this latter problem. The stability of the method may impose a strict mesh spacing, therefore a proper stabilized scheme, which is stable whatever spacing is used, has been developed. The convergence of the scheme is treated as well as some numerical experiments.

  5. Network dynamics in nociceptive pathways assessed by the neuronal avalanche model

    Directory of Open Access Journals (Sweden)

    Wu José

    2012-04-01

    Full Text Available Abstract Background Traditional electroencephalography provides a critical assessment of pain responses. The perception of pain, however, may involve a series of signal transmission pathways in higher cortical function. Recent studies have shown that a mathematical method, the neuronal avalanche model, may be applied to evaluate higher-order network dynamics. The neuronal avalanche is a cascade of neuronal activity, the size distribution of which can be approximated by a power law relationship manifested by the slope of a straight line (i.e., the α value. We investigated whether the neuronal avalanche could be a useful index for nociceptive assessment. Findings Neuronal activity was recorded with a 4 × 8 multichannel electrode array in the primary somatosensory cortex (S1 and anterior cingulate cortex (ACC. Under light anesthesia, peripheral pinch stimulation increased the slope of the α value in both the ACC and S1, whereas brush stimulation increased the α value only in the S1. The increase in α values was blocked in both regions under deep anesthesia. The increase in α values in the ACC induced by peripheral pinch stimulation was blocked by medial thalamic lesion, but the increase in α values in the S1 induced by brush and pinch stimulation was not affected. Conclusions The neuronal avalanche model shows a critical state in the cortical network for noxious-related signal processing. The α value may provide an index of brain network activity that distinguishes the responses to somatic stimuli from the control state. These network dynamics may be valuable for the evaluation of acute nociceptive processes and may be applied to chronic pathological pain conditions.

  6. Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

    Science.gov (United States)

    Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

    2018-03-01

    A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

  7. Advances in semiconductor photodetectors for scintillators

    International Nuclear Information System (INIS)

    Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

    1997-01-01

    Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

  8. CsI(Tl) with photodiodes for identifying subsurface radionuclide contamination

    International Nuclear Information System (INIS)

    Stromswold, D.C.; Meisner, J.E.; Nicaise, W.F.

    1994-10-01

    At the US Department of Energy's Hanford Site near Richland, Washington, underground radioactive contamination exists as the result of leaks, spills, and intentional disposal of waste products from plutonium-production operations. Characterizing these contaminants in preparation for environmental remediation is a major effort now in progress. In this paper, a cylindrical (15 x 61 mm) CsI(Tl) scintillation detector with two side-mounted photodiodes has been developed to collect spectral gamma-ray data in subsurface contaminated formations at the U.S. Department of Energy's Hanford Site. It operates inside small-diameter, thick-wall steel pipes pushed into the ground to depths up to 20 m by a cone penetrometer. The detector provides a rugged, efficient, magnetic-field-insensitive means for identifying gamma-ray-emitting contaminants (mainly 137 Cs and 60 Co). Mounting two 3 x 30-mm photodiodes end-to-end on a flat area along the detector's side provides efficient light collection over the length of the detector

  9. Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

    Science.gov (United States)

    Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

    2010-08-01

    ×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

  10. Assessing the value of real-time snow and avalanche information

    Science.gov (United States)

    Zeidler, Antonia; Adams, Marc; Schuster, Martin; Berner, Martin; Nagy, Wilhelm

    2017-04-01

    This poster presentation shows first results from a pilot study on exploring the possibilities of using existing and new information and communication technologies (ICT) for snow and avalanche assessments. Today, ICT solutions allow the utilisation of information at a high spatiotemporal resolution, due to the widespread availability of internet access, high computing power and affordable mobile devices. Therefore, there is an increasing request for up to date information on snow and avalanche decision-making. However, there are challenges that need to be addressed from different view points. These include topics in the field of technological feasibility of providing a stable network, exchanging trustworthy information and motivation of experts to participate. This contribution discusses the lessons-learnt, from the establishment of a platform to the user-experience.

  11. Avalanches of Singing Sand in the Laboratory

    Science.gov (United States)

    Dagois-Bohy, Simon; Courrech Du Pont, Sylvain; Douady, Stéphane

    2011-03-01

    The song of dunes is a natural phenomenon that has arisen travellers' curiosity for a long time, from Marco Polo to R.A. Bagnold. Scientific observations in the XXth century have shown that the sound is emitted during a shear flow of these particular grains, the free surface of the flow having coherent vibrations like a loud speaker. The sound emission is also submitted to a threshold effect with many parameters like humidity, flow speed, surface of the grains. The sound has been reproduced in laboratory avalanche experiments close to the natural phenomenon on field, but set in a channel with a hard bottom and a few centimeters of sand flowing, which contradicts explanations of the sound that involve a sand dune under the avalanche flow. Flow rates measurements also show the presence of a plug region in the flow above the sheared band, with the same characteristic length as the coherence zones of the sound. Finally we show experimentally that the Froude number, once modified to take into account the height of this plug band, is the parameter that sets the amplitude of the sound, and produces a threshold that depends on the grain type.

  12. Townsend coefficients of gases in avalanche counters

    International Nuclear Information System (INIS)

    Brunner, G.

    1978-01-01

    Though much work has been done by many authors in the last few years in the development and application of avalanche counters for ion radiation, it is based upon values of the Townsend coefficients as the essential gas parameter, which were determined many years ago for much lower reduced field strengths F/p than prevail in such counters. Therefore absolute determinations of α in vapours of methyl alcohol, cyclohexane, acetone, and n-heptene were performed under original conditions of avalanche counters. The values obtained do not differ by more than 30%-50% from the former values indeed, extrapolated over F/p for the first three mentioned substances, but the amounts of A and B in the usual representation α/p=A exp(-B(F/p)) are much greater for the stronger reduced fields. This is of importance for such counter properties as the dependence of pulse heights on pressure, voltage, electrode distance etc., which are governed by other combinations of A and B than α/p itself. A comparison of results for different ionic radiations shows a marked influence of the primary ionization density along the particle tracks which is hard to explain. (Auth.)

  13. X-ray imaging with amorphous selenium: Pulse height measurements of avalanche gain fluctuations

    International Nuclear Information System (INIS)

    Lui, Brian J. M.; Hunt, D. C.; Reznik, A.; Tanioka, K.; Rowlands, J. A.

    2006-01-01

    Avalanche multiplication in amorphous selenium (a-Se) can provide a large, adjustable gain for active matrix flat panel imagers (AMFPI), enabling quantum noise limited x-ray imaging during both radiography and fluoroscopy. In the case of direct conversion AMFPI, the multiplication factor for each x ray is a function of its depth of interaction, and the resulting variations in gain can reduce the detective quantum efficiency (DQE) of the system. An experimental method was developed to measure gain fluctuations by analyzing images of individual x rays that were obtained using a video camera with an a-Se target operated in avalanche mode. Pulse height spectra (PHS) of the charge produced per x ray were recorded for monoenergetic 30.9, 49.4, and 73.8 keV x-ray sources. The rapid initial decay and long tail of each PHS can be explained by a model in which positive charge dominates the initiation of avalanche. The Swank information factor quantifies the effect of gain fluctuation on DQE and was calculated from the PHS. The information factor was found to be 0.5 for a 25 μm a-Se layer with a maximum gain of ∼300. Changing the energy of the incident x ray influenced the range of the primary photoelectron and noticeably affected the tail of the experimental PHS, but did not significantly change the avalanche Swank factor

  14. Avalanche weak layer shear fracture parameters from the cohesive crack model

    Science.gov (United States)

    McClung, David

    2014-05-01

    Dry slab avalanches release by mode II shear fracture within thin weak layers under cohesive snow slabs. The important fracture parameters include: nominal shear strength, mode II fracture toughness and mode II fracture energy. Alpine snow is not an elastic material unless the rate of deformation is very high. For natural avalanche release, it would not be possible that the fracture parameters can be considered as from classical fracture mechanics from an elastic framework. The strong rate dependence of alpine snow implies that it is a quasi-brittle material (Bažant et al., 2003) with an important size effect on nominal shear strength. Further, the rate of deformation for release of an avalanche is unknown, so it is not possible to calculate the fracture parameters for avalanche release from any model which requires the effective elastic modulus. The cohesive crack model does not require the modulus to be known to estimate the fracture energy. In this paper, the cohesive crack model was used to calculate the mode II fracture energy as a function of a brittleness number and nominal shear strength values calculated from slab avalanche fracture line data (60 with natural triggers; 191 with a mix of triggers). The brittleness number models the ratio of the approximate peak value of shear strength to nominal shear strength. A high brittleness number (> 10) represents large size relative to fracture process zone (FPZ) size and the implications of LEFM (Linear Elastic Fracture Mechanics). A low brittleness number (e.g. 0.1) represents small sample size and primarily plastic response. An intermediate value (e.g. 5) implies non-linear fracture mechanics with intermediate relative size. The calculations also implied effective values for the modulus and the critical shear fracture toughness as functions of the brittleness number. The results showed that the effective mode II fracture energy may vary by two orders of magnitude for alpine snow with median values ranging from 0

  15. Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

    Science.gov (United States)

    Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

    2017-08-01

    This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

  16. Gamma-ray detection with an UV-enhanced photodiode and scintillation crystals emitting at short wavelengths

    International Nuclear Information System (INIS)

    Johansen, G.A.

    1997-01-01

    A low-noise ion implanted photodiode with high spectral response in the deep blue/UV region has been tested as read-out device for scintillation crystals with matching emission spectra (YAP(Ce), GSO(Ce), BGO and CsI(Tl)). This gamma-ray detector concept is attractive in many industrial applications where compactness, reliability and ambient temperature operation are important. The results show that the amount of detected scintillation light energy falls rapidly off as the wavelength of the scintillation light decreases. It is concluded that the dynamic spectral response of the photodiode, due to increasing carrier collection times, is considerably less than the DC response at short wavelengths. The diode is not useful in pulse mode operation with scintillation crystals emitting at wavelengths below about 400 nm. For read-out of CsI(Tl) with 661.6 keV gamma-radiation, however, the photodiode concept shows better energy resolution (7.1%) than other detectors. (orig.)

  17. Error diagrams and temporal correlations in a fracture model with characteristic and power-law distributed avalanches

    DEFF Research Database (Denmark)

    Moreno, Y.; Vázquez-Prada, M.; Pacheco, A.F.

    2003-01-01

    to the heterogeneity of the system. In one regime, a characteristic event is observed while for the second regime a power-law spectrum of avalanches is obtained reminiscent of self-organized criticality. We find that both regimes are different when predicting large avalanches and that, in the second regime...

  18. Emplacement mechanisms of contrasting debris avalanches at Volcán Mombacho (Nicaragua), provided by structural and facies analysis

    Science.gov (United States)

    Shea, Thomas; van Wyk de Vries, Benjamin; Pilato, Martín

    2008-07-01

    We study the lithology, structure, and emplacement of two debris-avalanche deposits (DADs) with contrasting origins and materials from the Quaternary-Holocene Mombacho Volcano, Nicaragua. A clear comparison is possible because both DADs were emplaced onto similar nearly flat (3° slope) topography with no apparent barrier to transport. This lack of confinement allows us to study, in nature, the perfect case scenario of a freely spreading avalanche. In addition, there is good evidence that no substratum was incorporated in the events during flow, so facies changes are related only to internal dynamics. Mombacho shows evidence of at least three large flank collapses, producing the two well-preserved debris avalanches of this study; one on its northern flank, “Las Isletas,” directed northeast, and the other on its southern flank, “El Crater,” directed south. Other south-eastern features indicate that the debris-avalanche corresponding to the third collapse (La Danta) occurred before Las Isletas and El Crater events. The materials involved in each event were similar, except in their alteration state and in the amount of substrata initially included in the collapse. While “El Crater” avalanche shows no signs of substratum involvement and has characteristics of a hydrothermal weakening-related collapse, the “Las Isletas” avalanche involves significant substratum and was generated by gravity spreading-related failure. The latter avalanche may have interacted with Lake Nicaragua during transport, in which case its run-out could have been modified. Through a detailed morphological and structural description of the Mombacho avalanches, we provide two contrasting examples of non-eruptive volcanic flank collapse. We show that, remarkably, even with two distinct collapse mechanisms, the debris avalanches developed the same gross stratigraphy of a coarse layer above a fine layer. This fine layer provided a low friction basal slide layer. Whereas DAD layering and

  19. Room-temperature broadband InAsSb flip-chip photodiodes with λcutoff = 4.5 μm

    International Nuclear Information System (INIS)

    Zakhgeim, A. L.; Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Chernyakov, A. E.

    2009-01-01

    Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n + -InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate's doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7-4.5 μm range is discussed.

  20. Meshfree simulation of avalanches with the Finite Pointset Method (FPM)

    Science.gov (United States)

    Michel, Isabel; Kuhnert, Jörg; Kolymbas, Dimitrios

    2017-04-01

    Meshfree methods are the numerical method of choice in case of applications which are characterized by strong deformations in conjunction with free surfaces or phase boundaries. In the past the meshfree Finite Pointset Method (FPM) developed by Fraunhofer ITWM (Kaiserslautern, Germany) has been successfully applied to problems in computational fluid dynamics such as water crossing of cars, water turbines, and hydraulic valves. Most recently the simulation of granular flows, e.g. soil interaction with cars (rollover), has also been tackled. This advancement is the basis for the simulation of avalanches. Due to the generalized finite difference formulation in FPM, the implementation of different material models is quite simple. We will demonstrate 3D simulations of avalanches based on the Drucker-Prager yield criterion as well as the nonlinear barodesy model. The barodesy model (Division of Geotechnical and Tunnel Engineering, University of Innsbruck, Austria) describes the mechanical behavior of soil by an evolution equation for the stress tensor. The key feature of successful and realistic simulations of avalanches - apart from the numerical approximation of the occurring differential operators - is the choice of the boundary conditions (slip, no-slip, friction) between the different phases of the flow as well as the geometry. We will discuss their influences for simplified one- and two-phase flow examples. This research is funded by the German Research Foundation (DFG) and the FWF Austrian Science Fund.

  1. 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

    Science.gov (United States)

    Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2015-10-05

    The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

  2. Application of PIN photodiodes on the detection of X-rays generated in an electron accelerator

    International Nuclear Information System (INIS)

    Mondragon-Contreras, L.; Ramirez-Jimenez, F.J.; Garcia-Hernandez, J.M.; Torres-Bribiesca, M.A.; Lopez-Callejas, R.; Aguilera-Reyes, E.F.; Pena-Eguiluz, R.; Lopez-Valdivia, H.; Carrasco-Abrego, H.

    2009-01-01

    PIN photodiodes are used in a novel application for the determination, within the energy range from 90 to 485 keV, of the intensity of X-rays generated by an experimental electron accelerator. An easily assembled X-ray monitor has been built with a low-cost PIN photodiode and operational amplifiers. The output voltage signal obtained from this device can be related to the electron beam current and the accelerating voltage of the accelerator in order to estimate the dose rate delivered by bremsstrahlung.

  3. Design of a photodetector unit of a new Shashlyk EM calorimeter for COMPASS II

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.; Krumshtein, Z.; Olchevski, A.

    2015-01-01

    A nine-channel photodetector unit with micropixel avalanche photodiodes (MAPD) and precision thermostabilization based on the compact Peltier module was designed and constructed. MAPD-3N with a high pixel density of 1.5·10 4 mm -2 and area 3x3 mm produced by Zecotek were used.

  4. The design of a photodetector unit of a new Shashlyk EM calorimeter for COMPASS II

    Energy Technology Data Exchange (ETDEWEB)

    Chirikov-Zorin, I., E-mail: chirikov@nusun.jinr.ru; Krumshtein, Z.; Olchevski, A.

    2016-07-11

    A nine-channel photodetector unit with micropixel avalanche photodiodes (MAPD) and precision thermostabilization based on the compact Peltier module is designed and constructed. MAPD-3N with a high pixel density of 15,000 per square mm and area 3×3 mm{sup 2} produced by Zecotek were used.

  5. Structural properties of layers of HgCdTe, grown by the laser epitaxy method on silicon substrates

    International Nuclear Information System (INIS)

    Plyatsko, S.V.; Vergush, M.M.; Litvin, P.M.; Kozirjev, Yu.M.; Shevlyakov, S.A.

    2001-01-01

    Thin films (0.1-1.5 μm) of HgCdTe on substrates Si (100) and Si (111) from monocrystal and pressed sources Hg 1-x Cd x Te (x=0.22) sprayed by laser IR radiation were grown and are investigated. The concentration of macro defects (drops) on the surface of films is determined by the relation of the diameter of a laser beam and depth of the crater, formed by laser irradiation. The size of crystal grains almost does not depend on the temperature of a substrate and power densities of a laser radiation and increases with the thickness of a layer

  6. Martian Dust Devil Electron Avalanche Process and Associated Electrochemistry

    Science.gov (United States)

    Jackson, Telana L.; Farrell, William M.; Delory, Gregory T.; Nithianandam, Jeyasingh

    2010-01-01

    Mars' dynamic atmosphere displays localized dust devils and larger, global dust storms. Based on terrestrial analog studies, electrostatic modeling, and laboratory work these features will contain large electrostatic fields formed via triboelectric processes. In the low-pressure Martian atmosphere, these fields may create an electron avalanche and collisional plasma due to an increase in electron density driven by the internal electrical forces. To test the hypothesis that an electron avalanche is sustained under these conditions, a self-consistent atmospheric process model is created including electron impact ionization sources and electron losses via dust absorption, electron dissociation attachment, and electron/ion recombination. This new model is called the Dust Devil Electron Avalanche Model (DDEAM). This model solves simultaneously nine continuity equations describing the evolution of the primary gaseous chemical species involved in the electrochemistry. DDEAM monitors the evolution of the electrons and primary gas constituents, including electron/water interactions. We especially focus on electron dynamics and follow the electrons as they evolve in the E field driven collisional gas. When sources and losses are self-consistently included in the electron continuity equation, the electron density grows exponentially with increasing electric field, reaching an equilibrium that forms a sustained time-stable collisional plasma. However, the character of this plasma differs depending upon the assumed growth rate saturation process (chemical saturation versus space charge). DDEAM also shows the possibility of the loss of atmospheric methane as a function of electric field due to electron dissociative attachment of the hydrocarbon. The methane destruction rates are presented and can be included in other larger atmospheric models.

  7. Early Holocene (8.6 ka) rock avalanche deposits, Obernberg valley (Eastern Alps): Landform interpretation and kinematics of rapid mass movement.

    Science.gov (United States)

    Ostermann, Marc; Sanders, Diethard; Ivy-Ochs, Susan; Alfimov, Vasily; Rockenschaub, Manfred; Römer, Alexander

    2012-10-15

    In the Obernberg valley, the Eastern Alps, landforms recently interpreted as moraines are re-interpreted as rock avalanche deposits. The catastrophic slope failure involved an initial rock volume of about 45 million m³, with a runout of 7.2 km over a total vertical distance of 1330 m (fahrböschung 10°). 36 Cl surface-exposure dating of boulders of the avalanche mass indicates an event age of 8.6 ± 0.6 ka. A 14 C age of 7785 ± 190 cal yr BP of a palaeosoil within an alluvial fan downlapping the rock avalanche is consistent with the event age. The distal 2 km of the rock-avalanche deposit is characterized by a highly regular array of transverse ridges that were previously interpreted as terminal moraines of Late-Glacial. 'Jigsaw-puzzle structure' of gravel to boulder-size clasts in the ridges and a matrix of cataclastic gouge indicate a rock avalanche origin. For a wide altitude range the avalanche deposit is preserved, and the event age of mass-wasting precludes both runout over glacial ice and subsequent glacial overprint. The regularly arrayed transverse ridges thus were formed during freezing of the rock avalanche deposits.

  8. Feasibility study of photodiodes utilization in the soil-moisture determination by gamma transmission

    International Nuclear Information System (INIS)

    Santos, L.A.P. dos.

    1992-08-01

    This study was done to verify the viability of photodiodes, as gamma radiation detector ( 241 Am - Energy=60 KeV), to measure soil water content. The photodiodes used had different mechanical and electrical characteristics, and were tested on soils of different textures. A good linear correlation between the logarithm of the attenuation factor and soil-moisture demonstrated such viability, and that the low photopeak efficiency of these devices is not a limitation to the measurement of soil water content. Furthermore, the stability, the portability, and low cost of such semiconductor devices, including its electronic system, represent relevant characteristics that may justify the development of a reliable gamma meter system for field studies. (author). 37 refs, 21 figs, 20 tabs

  9. Avalanches and generalized memory associativity in a network model for conscious and unconscious mental functioning

    Science.gov (United States)

    Siddiqui, Maheen; Wedemann, Roseli S.; Jensen, Henrik Jeldtoft

    2018-01-01

    We explore statistical characteristics of avalanches associated with the dynamics of a complex-network model, where two modules corresponding to sensorial and symbolic memories interact, representing unconscious and conscious mental processes. The model illustrates Freud's ideas regarding the neuroses and that consciousness is related with symbolic and linguistic memory activity in the brain. It incorporates the Stariolo-Tsallis generalization of the Boltzmann Machine in order to model memory retrieval and associativity. In the present work, we define and measure avalanche size distributions during memory retrieval, in order to gain insight regarding basic aspects of the functioning of these complex networks. The avalanche sizes defined for our model should be related to the time consumed and also to the size of the neuronal region which is activated, during memory retrieval. This allows the qualitative comparison of the behaviour of the distribution of cluster sizes, obtained during fMRI measurements of the propagation of signals in the brain, with the distribution of avalanche sizes obtained in our simulation experiments. This comparison corroborates the indication that the Nonextensive Statistical Mechanics formalism may indeed be more well suited to model the complex networks which constitute brain and mental structure.

  10. Modified Single Photo-diode (MSPD) Detection Technique for SAC-OCDMA System

    Science.gov (United States)

    Abdulqader, Sarah G.; Fadhil, Hilal A.; Aljunid, S. A.

    2015-03-01

    In this paper, a new detection technique called modified single photo-diode (MSPD) detection for SAC-OCDMA system is proposed. The proposed system based on the single photo-diode (SPD) detection technique. The new detection technique is proposed to overcome the limitation of phase-induced intensity noise (PIIN) in SPD detection technique. However, the proposed detection is based on an optical hard limiter (OHL) followed by a SPD and a low-pass filter (LPF) in order to suppress the phase intensity noise (PIIN) at the receiver side. The results show that the MSPD detection based on OHL has a good performance even when the transmission distance is long, which is different from the case of SPD detection technique. Therefore, the MSPD detection technique is shown to be effective to improve the bit error rate (BER<10-9) and to suppress the noise in the practical optical fiber network.

  11. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    International Nuclear Information System (INIS)

    Chaghi, R; Cervera, C; Aït-Kaci, H; Grech, P; Rodriguez, J B; Christol, P

    2009-01-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current–voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 Ω cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air

  12. First characterisation of the "Rumi-Pana" rock avalanche deposits (Famatina Range, La Rioja, Argentina)

    Science.gov (United States)

    Santiago Pullarello, José; Derron, Marc-Henri; Penna, Ivanna; Leiva, Alicia; Jaboyadoff, Michel

    2017-04-01

    Active mountain fronts are subject to large scale slope collapses which have the capacity to run long distances on piedmont areas. Along time, fluvial activity and other gravitatory processes can intensively erode and mask primary features related to the collapses. Therefore, to reconstruct the history of their occurrence, further analyses are needed, e.g. sedimentologic analyses. This work focuses on the occurrence of large rock avalanches in the Vinchina region, La Rioja (28°43'27.81'' S / 68°00'25.42'' W) on the western side of the Famatina range(Argentina). Here, photointerpretation of high resolution satellite images (Google Earth) allowed us to identify two rock avalanches, main scarps developed at 2575 and 2750 m a.s.l. . There are no absolute ages for these deposits, however, comparing their preservation degree with those dated further north (in similar climatic and landscape dynamics contexts [i]), we can suggest these rock avalanches took place during the Pleistocene. We carried out a fieldwork survey in this remote area, including classical landslide mapping, structural analysis, deposits characterization and sampling. The deposits reach the valley bottom (at around 1700 m a.s.l.) with runouts about 5 and 5.3 km long. In one of the cases, the morphology of the deposit is well preserved, allowing to reconstruct accurately its extension. However, in the second case, the deposits are strongly eroded by courses draining the mountain front, therefore further analyses should be done to reconstruct its extension. In addition to morphologic interpretations, a multiscale grain-size analysis was done to differentiate rock avalanches from other hillslope deposits: (1) 3D surface models of surface plots (5x5m) have been built by SfM photogrammetry; 2) classical sieving and 3) laser grain-size analysis of deposits. Samples were collected on different parts of the slope, but also along cross sections through the avalanche deposit. This deposits characterization will

  13. The electromagnetic radiation fields of a relativistic electron avalanche with special attention to the origin of narrow bipolar pulses

    Science.gov (United States)

    Cooray, G. V.; Cooray, G. K.

    2011-12-01

    Gurevich et al. [1] postulated that the source of narrow bipolar pulses, a class of high energy pulses that occur during thunderstorms, could be a runaway electron avalanche driven by the intense electric fields of a thunderstorm. Recently, Watson and Marshall [2] used the modified transmission line model to test the mechanism of the source of narrow bipolar pulses. In a recent paper, Cooray and Cooray [3] demonstrated that the electromagnetic fields of accelerating charges could be used to evaluate the electromagnetic fields from electrical discharges if the temporal and spatial variation of the charges in the discharge is known. In the present study, those equations were utilized to evaluate the electromagnetic fields generated by a relativistic electron avalanche. In the analysis it is assumed that all the electrons in the avalanche are moving with the same speed. In other words, the growth or the decay of the number of electrons takes place only at the head of the avalanche. It is shown that the radiation is emanating only from the head of the avalanche where electrons are being accelerated. It is also shown that an analytical expression for the radiation field of the avalanche at any distance can be written directly in terms of the e-folding length of the avalanche. This makes it possible to extract directly the spatial variation of the e-folding length of the avalanche from the measured radiation fields. In the study this model avalanche was used to investigate whether it can be used to describe the measured electromagnetic fields of narrow bipolar pulses. The results obtained are in reasonable agreement with the two station data of Eack [4] for speeds of propagation around (2 - 2.5) x 10^8 m/s and when the propagation effects on the electric fields measured at the distant station is taken into account. [1] Gurevich et al. (2004), Phys. Lett. A., 329, pp. 348 -361. [2] Watson, S. S. and T. C. Marshall (2007), Geophys. Res. Lett., Vol. 34, L04816, doi: 10

  14. Laser Light Scattering, from an Advanced Technology Development Program to Experiments in a Reduced Gravity Environment

    Science.gov (United States)

    Meyer, William V.; Tscharnuter, Walther W.; Macgregor, Andrew D.; Dautet, Henri; Deschamps, Pierre; Boucher, Francois; Zuh, Jixiang; Tin, Padetha; Rogers, Richard B.; Ansari, Rafat R.

    1994-01-01

    Recent advancements in laser light scattering hardware are described. These include intelligent single card correlators; active quench/active reset avalanche photodiodes; laser diodes; and fiber optics which were used by or developed for a NASA advanced technology development program. A space shuttle experiment which will employ aspects of these hardware developments is previewed.

  15. Custom integrated front-end circuit for the CMS electromagnetic calorimeter

    CERN Document Server

    Walder, J P; Denes, P; Mathez, H; Pangaud, P

    2001-01-01

    A wide dynamic range multi-gain transimpedance amplifier custom integrated circuit has been developed for the readout of avalanche photodiode and vacuum photodiode in the CMS electromagnetic calorimeter for LHC experiment. The 92 db input dynamic range is divided into four ranges of 12 bits each in order to provide 40 MHz analog sampled data to a 12 bits ADC. This concept, which has been integrated in rad-hard full complementary bipolar technology, will be described. Experimental results obtained in lab and under irradiation will be presented along with test strategy being used for mass production. 6 Refs.

  16. Trigger mechanisms of debris avalanche. Comparison between Bandai-san 1888 and the other cases

    Energy Technology Data Exchange (ETDEWEB)

    Ui, Tadahide

    1988-08-25

    This report describes a trial of classifying the trigger mechanisms of debris avalanche in a volcanic action, on the basis of a geography and the structure of the sedimentation. Reason of disintegration is diversified but the debris avalanche is caused by the destruction of the unstable mountain mass. In the case of the 1888 debris avalanche of Bandai-san, a small steam explosion at the end of the strato-volcanic activity caused the instability of a part of the mountain mass, inducing a landslide. At the active period of the volcano, a viscous magma penetrates into the volcano mass, sometimes deforming the mountain body and eventually reaching disintegration. Furthermore, an eroded valley on the surface of the volcano body develops and disintegrates and, also along the slope of the volcano, a disintegration towards the sea-bottom will occur. (4 figs, 4 tabs, 19 refs)

  17. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes

    International Nuclear Information System (INIS)

    Wiczer, J.J.; Barnes, C.E.; Dawson, L.R.

    1980-01-01

    Certain military applications require the continuous operation of optoelectronic information transfer systems during exposure to ionizing radiation. In such an environment the optical detector can be the system element which limits data transmission. We report here the measured electrical and optical characteristics of an irradiation tolerant photodiode fabricated from a double heterojunction structure in the gallium aluminum antimonide (GaAlSb) ternary semiconductor system. A series of tests at Sandia Laboratories' Relativistic Electron Beam Accelerator (REBA) subjected this device and commercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide) to dose rate levels of 10 7 to 10 8 rads/sec. The results of these tests show that the thin GaAlSb double heterojunction photodiode structure generates significantly less unwanted radiation induced current density than that of the next best commercial device

  18. The Large-Scale Debris Avalanche From The Tancitaro Volcano (Mexico): Characterization And Modeling

    Science.gov (United States)

    Morelli, S.; Gigli, G.; Falorni, G.; Garduno Monroy, V. H.; Arreygue, E.

    2008-12-01

    The Tancitaro is an andesitic-dacitic stratovolcano located in the Michoacán Guanajuato volcanic field within the west-central portion of the trans-Mexican Volcanic Belt. The volcanism in this area is characterized by two composite volcanoes, the highest of which is the Tancitaro volcanic edifice (3840 m), some low angle lava cones and more than 1,000 monogenetic cinder cones. The distribution of the cinder cones is controlled by NE-SW active faults, although there are also additional faults with NNW-SSE trends along which some cones are aligned. The Tancitaro stratovolcano is located at the intersection of the tectonical structures that originate these alignments. All this geological activity has contributed to the gravitational instability of the volcano, leading to a huge sector collapse which produced the investigated debris avalanche. The collapse structure is an east-facing horseshoe-shaped crater (4 km wide and 5.3 km long), related with a large fan that was deposited within the Tepalcatepec depression. The deposit starts only 7 km downslope from the failure scar, it is 66 km long and covers an area of approximately 1155 km2. The landslide magnitude is about 20 km3 and it was firstly determined by the reconstruction of the paleo-edifice using a GIS software and then validated by the observation of significant outcrops. The fan was primarily formed by the deposit of this huge debris avalanche and subsequently by debris flow and fluvial deposits. Field investigations on the fan area highlighted the presence of two texturally distinct parts, which are referred to the 'block facies' and the 'matrix facies'. The first sedimentary structure is responsible for the typical hummock morphologies in the proximal area, as seen in many other debris avalanche deposits. Instead in the distal zones, the deposit is made up by the 'mixed block and matrix facies'. Blocks and megablocks, some of which are characterized by a jigsaw puzzle texture, gradually decrease in size

  19. Indirect flat-panel detector with avalanche gain: Fundamental feasibility investigation for SHARP-AMFPI (scintillator HARP active matrix flat panel imager)

    International Nuclear Information System (INIS)

    Zhao Wei; Li Dan; Reznik, Alla; Lui, B.J.M.; Hunt, D.C.; Rowlands, J.A.; Ohkawa, Yuji; Tanioka, Kenkichi

    2005-01-01

    An indirect flat-panel imager (FPI) with avalanche gain is being investigated for low-dose x-ray imaging. It is made by optically coupling a structured x-ray scintillator CsI(Tl) to an amorphous selenium (a-Se) avalanche photoconductor called HARP (high-gain avalanche rushing photoconductor). The final electronic image is read out using an active matrix array of thin film transistors (TFT). We call the proposed detector SHARP-AMFPI (scintillator HARP active matrix flat panel imager). The advantage of the SHARP-AMFPI is its programmable gain, which can be turned on during low dose fluoroscopy to overcome electronic noise, and turned off during high dose radiography to avoid pixel saturation. The purpose of this paper is to investigate the important design considerations for SHARP-AMFPI such as avalanche gain, which depends on both the thickness d Se and the applied electric field E Se of the HARP layer. To determine the optimal design parameter and operational conditions for HARP, we measured the E Se dependence of both avalanche gain and optical quantum efficiency of an 8 μm HARP layer. The results were used in a physical model of HARP as well as a linear cascaded model of the FPI to determine the following x-ray imaging properties in both the avalanche and nonavalanche modes as a function of E Se : (1) total gain (which is the product of avalanche gain and optical quantum efficiency); (2) linearity; (3) dynamic range; (4) gain nonuniformity resulting from thickness nonuniformity; and (5) effects of direct x-ray interaction in HARP. Our results showed that a HARP layer thickness of 8 μm can provide adequate avalanche gain and sufficient dynamic range for x-ray imaging applications to permit quantum limited operation over the range of exposures needed for radiography and fluoroscopy

  20. Determination of the electron-hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

    CERN Document Server

    Scholze, F; Kuschnerus, P; Rabus, H; Richter, M; Ulm, G

    2000-01-01

    Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron-hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66+-0.03) eV fo...

  1. Caldera formation at Volcán Colima, Mexico, by a large large holocene volcanic debris avalanche

    Science.gov (United States)

    Luhr, James F.; Prestegaard, Karen L.

    1988-12-01

    About 4,300 years ago, 10 km 3 of the upper cone of ancestral Volcán Colima collapsed to the southwest leaving a horseshoe-shaped caldera 4 km in diameter. The collapse produced a massive volcanic debris avalanche deposit covering over 1550 km 2 on the southern flanks of the volcano and extending at least 70 km from the former summit. The avalanche followed a steep topographic gradient unobstructed by barriers, resulting in an unusually high area/volume ratio for the Colima deposit. The apparent coefficient of friction (fall height/distance traveled) for the Colima avalanche is 0.06, a low value similar to those of other large-volume deposits. The debris avalanche deposit contains 40-75% angular volcanic clasts from the ancestral cone, a small proportion of vesicular blocks that may be juvenile, and in distal exposures, rare carbonate clasts plucked from the underlying surface by the moving avalanche. Clasts range in size to over 20 m in diameter and are brecciated to different degrees, pulverized, and surrounded by a rock-flour matrix. The upper surface of the deposit shows prominent hummocky topography with closed depressions and surface boulders. A thick, coarse-grained, compositionally zoned scoria-fall layer on the upper northeastern slope of the volcano may have erupted at the time of collapse. A fine-grained surge layer is present beneath the avalanche deposit at one locality, apparently representing an initial blast event. Most of the missing volume of the ancestral volcano has since been restored at an average rate of 0.002 km 3/yr through repeated eruptions from the post-caldera cone. As a result, the southern slope of Volcán Colima may again be susceptible to collapse. Over 200,000 people are now living on primary or secondary deposits of the debris avalanche, and a repetition of this event would constitute a volcanic disaster of great magnitude. Ancestral Volcán Colima grew on the southern, trenchward flank of the earlier and larger volcano Nevado de

  2. Room-temperature broadband InAsSb flip-chip photodiodes with {lambda}{sub cutoff} = 4.5 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Zakhgeim, A L [Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicron Heterostructures at Ioffe Physicotechnical Institute (Russian Federation); Zotova, N V; Il' inskaya, N D; Karandashev, S A; Matveev, B. A., E-mail: bmat@iropt3.ioffe.rssi.ru; Remennyi, M A; Stus' , N M [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Chernyakov, A E [Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicron Heterostructures at Ioffe Physicotechnical Institute (Russian Federation)

    2009-03-15

    Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n{sup +}-InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate's doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7-4.5 {mu}m range is discussed.

  3. Statistical distributions of avalanche size and waiting times in an inter-sandpile cascade model

    Science.gov (United States)

    Batac, Rene; Longjas, Anthony; Monterola, Christopher

    2012-02-01

    Sandpile-based models have successfully shed light on key features of nonlinear relaxational processes in nature, particularly the occurrence of fat-tailed magnitude distributions and exponential return times, from simple local stress redistributions. In this work, we extend the existing sandpile paradigm into an inter-sandpile cascade, wherein the avalanches emanating from a uniformly-driven sandpile (first layer) is used to trigger the next (second layer), and so on, in a successive fashion. Statistical characterizations reveal that avalanche size distributions evolve from a power-law p(S)≈S-1.3 for the first layer to gamma distributions p(S)≈Sαexp(-S/S0) for layers far away from the uniformly driven sandpile. The resulting avalanche size statistics is found to be associated with the corresponding waiting time distribution, as explained in an accompanying analytic formulation. Interestingly, both the numerical and analytic models show good agreement with actual inventories of non-uniformly driven events in nature.

  4. Compact and high-sensitivity 100-Gb/s (4 × 25 Gb/s) APD-ROSA with a LAN-WDM PLC demultiplexer.

    Science.gov (United States)

    Yoshimatsu, Toshihide; Nada, Masahiro; Oguma, Manabu; Yokoyama, Haruki; Ohno, Tetsuichiro; Doi, Yoshiyuki; Ogawa, Ikuo; Takahashi, Hiroshi; Yoshida, Eiji

    2012-12-10

    We demonstrate an integrated 100 GbE receiver optical sub-assembly (ROSA) that incorporates a monolithic four-channel avalanche photodiode (APD) array and a planer lightwave circuit (PLC) based LAN-WDM demultiplexer. A record minimum receiver sensitivity of -20 dBm and 50-km error-free SMF transmission without an optical amplifier have been achieved.

  5. Posttraumatic stress and other health consequences of catastrophic avalanches: A 16-year follow-up of survivors.

    Science.gov (United States)

    Thordardottir, Edda Bjork; Valdimarsdottir, Unnur Anna; Hansdottir, Ingunn; Resnick, Heidi; Shipherd, Jillian C; Gudmundsdottir, Berglind

    2015-05-01

    To date, no study has investigated the effects of avalanches on survivor's health beyond the first years. The aim of this study was to examine long-term health status 16 years after exposure to avalanches using a matched cohort design. Mental health, sleep quality and somatic symptoms among avalanche survivors (n=286) and non-exposed controls (n=357) were examined. Results showed that 16% of survivors currently experience avalanche-specific PTSD symptoms (PDS score>14). In addition, survivors presented with increased risk of PTSD hyperarousal symptoms (>85th percentile) (aRR=1.83; 98.3% CI [1.23-2.74]); sleep-related problems (PSQI score>5) (aRR=1.34; 95% CI [1.05-1.70]); PTSD-related sleep disturbances (PSQI-A score≥4) (aRR=1.86; 95% CI [1.30-2.67]); musculoskeletal and nervous system problems (aRR 1.43; 99% CI 1.06-1.93) and gastrointestinal problems (aRR 2.16; 99% CI 1.21-3.86) compared to the unexposed group. Results highlight the need for treatment for long-term PTSD symptoms and sleep disruption in disaster communities. Copyright © 2015 Elsevier Ltd. All rights reserved.

  6. Photodiodes based on fullerene semiconductor

    International Nuclear Information System (INIS)

    Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

    2007-01-01

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

  7. Photodiode-based cutting interruption sensor for near-infrared lasers.

    Science.gov (United States)

    Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

    2016-03-01

    We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

  8. heat flow in a finite isolated pulsed avalanche semiconductor diode

    African Journals Online (AJOL)

    ES Obe

    1981-03-01

    Mar 1, 1981 ... high-power high-efficiency avalanche semiconductor devices. The ... computed, and useful practical design curves for a specified operation .... iv. For spherical shells of radius, ρ(x,y,z) = √x2+y2+z2. > R, the heat source.

  9. A position sensitive parallel plate avalanche counter

    International Nuclear Information System (INIS)

    Lombardi, M.; Tan Jilian; Potenza, R.; D'amico, V.

    1986-01-01

    A position sensitive parallel plate avalanche counter with a distributed constant delay-line-cathode (PSAC) is described. The strips formed on the printed board were served as the cathode and the delay line for readout of signals. The detector (PSAC) was operated in isobutane gas at the pressure range from 10 to 20 torr. The position resolution is better than 1 mm and the time resolution is about 350 ps, for 252 Cf fission-spectrum source

  10. High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

    International Nuclear Information System (INIS)

    He, Qing Lin; Lai, Ying Hoi; Sou, Iam Keong; Liu, Yi; Beltjens, Emeline; Qi, Jie

    2015-01-01

    CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm

  11. Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    2000-01-01

    The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

  12. Current oscillations in avalanche particle detectors with PNIPN-structure

    International Nuclear Information System (INIS)

    Lukin, K.A.

    1995-08-01

    The model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. This detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out

  13. Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

    Science.gov (United States)

    Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

    2017-08-01

    Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Two-dimensional position sensitive silicon photodiode as a charged particle detector

    International Nuclear Information System (INIS)

    Kovacevic, K.; Zadro, M.

    1999-01-01

    A two-dimensional position sensitive silicon photodiode has been tested for measurement of position and energy of charged particles. Position nonlinearity and resolution, as well as energy resolution and ballistic deficit were measured for 5.486 MeV α-particles. The results obtained for different pulse shaping time constants are presented

  15. A simulated avalanche search and rescue mission induces temporary physiological and behavioural changes in military dogs.

    Science.gov (United States)

    Diverio, Silvana; Barbato, Olimpia; Cavallina, Roberta; Guelfi, Gabriella; Iaboni, Martina; Zasso, Renato; Di Mari, Walter; Santoro, Michele Matteo; Knowles, Toby G

    2016-09-01

    Saving human lives is of paramount importance in avalanche rescue missions. Avalanche military dogs represent an invaluable resource in these operations. However, their performance can be influenced by several environmental, social and transport challenges. If too severe, these are likely to activate a range of responses to stress, which might put at risk the dogs' welfare. The aim of this study was to assess the physiological and behavioural responses of a group of military dogs to a Simulated Avalanche Search and Rescue mission (SASR). Seventeen avalanche dogs from the Italian Military Force Guardia di Finanza (SAGF dogs) were monitored during a simulated search for a buried operator in an artificial avalanche area (SASR). Heart rate (HR), body temperature (RBT) and blood samples were collected at rest the day before the trial (T0), immediately after helicopter transport at the onset of the SASR (T1), after the discovery of the buried operator (T2) and 2h later (T3). Heart rate (HR), rectal body temperature (RBT), cortisol, aspartate aminotransferase (AST), creatine kinase (CK), non-esterified fatty acids (NEFA) and lactate dehydrogenase (LDH) were measured. During the search mission the behaviour of each SAGF dog was measured by focal animal sampling and qualitatively assessed by its handler and two observers. Inter-rater agreement was evaluated. Snow and environmental variables were also measured. All dogs successfully completed their search for the buried, simulated victim within 10min. The SASR was shown to exert significant increases on RBT, NEFA and cortisol (Pdog's search mission ability was found only for motivation, signalling behaviour, signs of stress and possessive reward playing. More time signalling was related to shorter search time. In conclusion, despite extreme environmental and training conditions only temporary physiological and behavioural changes were recorded in the avalanche dogs. Their excellent performance in successful simulated SASR

  16. Prediction of electromagnetic pulse generation by picosecond avalanches in high-pressure air

    International Nuclear Information System (INIS)

    Mayhall, D.J.; Yee, J.H.

    1993-01-01

    The gas avalanche switch is a laser-activated, high-voltage switch, consisting of a set of pulse-charged electrodes in a high-pressure gas. Induced electrons from a picosecond-scale laser pulse initiate an avalanche discharge between high-voltage and grounded electrodes. If the voltage, pressure, and dimensions are correct, the rapid avalanche, fueled by the immense number of electrons available in the gas, collapses the applied voltage in picoseconds and generates electromagnetic pulses with widths as short as 1-10 ps and 3 dB bandwidths of 20-120 GHz. With proper voltage or pressure detuning, wider pulses and lower bandwidths occur. In addition to picosecond electromagnetic pulse generation, application of this switch should result in ultra-fast Marx bank pulsers. A number of versions of the switch are possible. The simplest is a parallel plate capacitor, consisting of a gas between two parallel plate conductors. High voltage is applied across the two plates. A parallel plate, Blumlein geometry features a center electrode between two grounded parallel plates. This geometry emits a single pulse in each direction along the parallel plates. A frozen wave geometry with multiple, oppositely charged center electrodes will emit AC pulses. Series switches consisting of gas gaps between two electrodes are also possible

  17. Progresses in the simulation of Resistive Plate Chambers in avalanche mode

    Energy Technology Data Exchange (ETDEWEB)

    Abbrescia, M.; Colaleo, A.; Iaselli, G.; Loddo, F.; Maggi, M.; Marangelli, B.; Natali, S.; Nuzzo, S.; Pugliese, G.; Ranieri, A.; Romano, F.; Altieri, S.; Bruno, G.; Gianini, G.; Ratti, S.P.; Viola, L.; Vitulo, P

    1999-08-01

    New results about the simulation of Resistive Plate Chambers are reported; particular emphasis is put in the understanding of charge spectra in regions where deviations from the pure avalanche mode of operation can be present.

  18. The Chimborazo sector collapse and debris avalanche : deposit characteristics as evidence of emplacement mechanisms

    OpenAIRE

    Bernard, B.; Vries de, B. V.; Barba, D.; Leyrit, H.; Robin, Claude; Alcaraz, S.; Samaniego, Pablo

    2008-01-01

    Chimborazo is a Late Pleistocene to Holocene stratovolcano located at the southwest end of the main Ecuadorian volcanic arc. It experienced a large sector collapse and debris avalanche (DA) of the initial edifice (CH-1). This left a 4 km wide scar, removing 8.0 +/- 0.5 km(3) of the edifice. The debris avalanche deposit (DAD) is abundantly exposed throughout the Riobamba Basin to the Rio Chambo, more than 35 km southeast of the volcano. The DAD averages a thickness of 40 m, covers about 280 km...

  19. Cataclysmic Rock Avalanche from El Capitan, Yosemite Valley, circa 3.6 ka

    Science.gov (United States)

    Stock, G. M.

    2008-12-01

    El Capitan in Yosemite Valley is one of the largest and most iconic granite faces in the world. Despite glacially steepened walls exceeding 90 degrees, a historic database shows relatively few rock falls from El Capitan in the past 150 years. However, a massive bouldery deposit beneath the southeast face suggests an earlier rock avalanche of unusually large size. Spatial analysis of airborne LiDAR data indicate that the rock avalanche deposit has a volume of ~2.70 x 106 m3, a maximum thickness of 18 m, and a runout distance of 660 m, roughly twice the horizontal extent of the adjacent talus. The deposit is very coarse on its distal edge, with individual boulder volumes up to 2500 m3. Cosmogenic 10Be exposure dates from boulders distributed across the deposit confirm this interpretation. Four 10Be samples are tightly clustered between 3.5 and 3.8 ka, with a mean age of 3.6 +/- 0.6 ka. A fifth sample gives a much older age of 22.0 ka, but a glacier occupied Yosemite Valley at this time, prohibiting deposition; thus, the older age likely results from exposure on the cliff face prior to failure. The similarity of ages and overall morphology suggest that the entire deposit formed during a single event. The mean exposure age coincides with inferred Holocene rupture of the northern Owens Valley and/or White Mountain fault(s) between 3.3 and 3.8 ka (Lee et al., 2001; Bacon and Pezzopane, 2007). This time coincidence, combined with the fact that historic rupture of the Owens Valley fault in A.D. 1872 generated numerous large rock falls in Yosemite Valley, strongly suggests that the El Capitan rock avalanche was triggered by a seismic event along the eastern margin of the Sierra Nevada circa 3.6 ka. As there is not an obvious "scar" on the expansive southeast face, the exact source area of the rock avalanche is not yet known. Detrital apatite U-Th/(He) thermochronometry can determine the elevation(s) from which rock fall boulders originate, but significant inter-sample age

  20. Microprocessor system to recover data from a self-scanning photodiode array

    International Nuclear Information System (INIS)

    Koppel, L.N.; Gadd, T.J.

    1975-01-01

    A microprocessor system developed at Lawrence Livermore Laboratory has expedited the recovery of data describing the low energy x-ray spectra radiated by laser-fusion targets. An Intel microprocessor controls the digitization and scanning of the data stream of an x-ray-sensitive self-scanning photodiode array incorporated in a crystal diffraction spectrometer

  1. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  2. Data collapse and critical dynamics in neuronal avalanche data

    Science.gov (United States)

    Butler, Thomas; Friedman, Nir; Dahmen, Karin; Beggs, John; Deville, Lee; Ito, Shinya

    2012-02-01

    The tasks of information processing, computation, and response to stimuli require neural computation to be remarkably flexible and diverse. To optimally satisfy the demands of neural computation, neuronal networks have been hypothesized to operate near a non-equilibrium critical point. In spite of their importance for neural dynamics, experimental evidence for critical dynamics has been primarily limited to power law statistics that can also emerge from non-critical mechanisms. By tracking the firing of large numbers of synaptically connected cortical neurons and comparing the resulting data to the predictions of critical phenomena, we show that cortical tissues in vitro can function near criticality. Among the most striking predictions of critical dynamics is that the mean temporal profiles of avalanches of widely varying durations are quantitatively described by a single universal scaling function (data collapse). We show for the first time that this prediction is confirmed in neuronal networks. We also show that the data have three additional features predicted by critical phenomena: approximate power law distributions of avalanche sizes and durations, samples in subcritical and supercritical phases, and scaling laws between anomalous exponents.

  3. Diamond photodiodes for x-ray application

    Energy Technology Data Exchange (ETDEWEB)

    Distel, James R [Los Alamos National Laboratory; Smedley, John [BNL; Keister, Jeffrey W [BNL; Muller, Erik [STONY BROOK UNIV.; Jordan - Sweet, Jean [WATSON RESEARCH CENTER; Bohon, Jen [CASE WESTERN RESERVE UNIV.; Dong, Bin [NON LANL

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  4. Avalanche diode having reduced dark current and method for its manufacture

    Science.gov (United States)

    Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

    2017-08-29

    An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

  5. Secondary instability in drift wave turbulence as a mechanism for avalanche and zonal flow formation

    International Nuclear Information System (INIS)

    Diamond, P.H.; Champeaux, S.; Malkov, M.

    2001-01-01

    We report on recent developments in the theory of secondary instability in drift-ITG turbulence. Specifically, we explore secondary instability as a mechanism for avalanche formation. A theory of radially extended streamer cell formation and self-regulation is presented. Aspects of streamer structure and dynamics are used to estimate the variance of the drift-wave induced flux. The relation between streamer cell structures and the avalanche concept is discussed, as are the implications of our results for transport modeling. (author)

  6. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  7. A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H. [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-03-15

    Highlights: • Lithium–zinc–tin–oxide thin films were prepared by sol gel method. • The Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a LZTO layer grown on p-Si. • The photodiodes with Li-doped ZTO interfacial layer exhibited a better device performance. - Abstract: Lithium–zinc–tin–oxide thin films were prepared by sol gel method. The structural and optical properties of the films were investigated. The optical band gaps of the LiZnSnO films were found to be 3.78 eV for 0 at.% Li, 3.77 eV for 1 at.% Li, 3.87 eV for 3 at.% Li and 3.85 eV for 5 at.% Li, respectively. Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a lithium–zinc–tin–oxide (LZTO, Li–Zn–Sn–O) layer grown on p-Si semiconductor. The electrical characteristics of the photodiodes were analyzed by current–voltage, capacitance–voltage and conductance–voltage measurements. The reverse current of the diodes increases with both the increasing illumination intensity and Li content. It was found that the Li-doped ZTO photodiodes exhibited a better device performance than those with an undoped ZTO.

  8. The characteristic patterns of neuronal avalanches in mice under anesthesia and at rest: An investigation using constrained artificial neural networks

    Science.gov (United States)

    Knöpfel, Thomas; Leech, Robert

    2018-01-01

    Local perturbations within complex dynamical systems can trigger cascade-like events that spread across significant portions of the system. Cascades of this type have been observed across a broad range of scales in the brain. Studies of these cascades, known as neuronal avalanches, usually report the statistics of large numbers of avalanches, without probing the characteristic patterns produced by the avalanches themselves. This is partly due to limitations in the extent or spatiotemporal resolution of commonly used neuroimaging techniques. In this study, we overcome these limitations by using optical voltage (genetically encoded voltage indicators) imaging. This allows us to record cortical activity in vivo across an entire cortical hemisphere, at both high spatial (~30um) and temporal (~20ms) resolution in mice that are either in an anesthetized or awake state. We then use artificial neural networks to identify the characteristic patterns created by neuronal avalanches in our data. The avalanches in the anesthetized cortex are most accurately classified by an artificial neural network architecture that simultaneously connects spatial and temporal information. This is in contrast with the awake cortex, in which avalanches are most accurately classified by an architecture that treats spatial and temporal information separately, due to the increased levels of spatiotemporal complexity. This is in keeping with reports of higher levels of spatiotemporal complexity in the awake brain coinciding with features of a dynamical system operating close to criticality. PMID:29795654

  9. Radiation profile measurements for edge transport barrier discharges in Compact Helical System using AXUV photodiode arrays

    International Nuclear Information System (INIS)

    Suzuki, C.; Okamura, S.; Minami, T.; Akiyama, T.; Fujisawa, A.; Ida, K.; Isobe, M.; Matsuoka, K.; Nagaoka, K.; Nishimura, S.; Peterson, B. J.; Shimizu, A.; Takahashi, C.; Toi, K.; Yoshimura, Y.

    2005-01-01

    The formation of edge transport barrier (ETB) has recently been found in Compact Helical System (CHS) plasmas heated by co-injected neutral beam injection (NBI) with strong gas puffing. This regime is characterized by the appearance of the steep gradient of the electron density near the edge following the abrupt drop of hydrogen Balmer alpha (H α ) line intensity. In addition to single channel pyroelectric detector as a conventional bolometer, we have employed unfiltered absolute extreme ultraviolet (AXUV) photodiode arrays as a simple and low-cost diagnostic to investigate spatial and temporal variations of radiation emissivity in the ETB discharges. A compact mounting module for a 20 channel AXUV photodiode array including an in-vacuum preamplifier for immediate current-voltage conversion has successfully been designed and fabricated. Two identical modules installed in the upper and lower viewports provide 40 lines of sight covering the inboard and outboard sides within the horizontally elongated cross section of the CHS plasma with wide viewing angle. Although spectral uniformity of the detector sensitivity of the AXUV photodiode is unsatisfied for photon energies lower than 200 eV, it has been confirmed that the signals of AXUV photodiode and pyroelectric detector in the ETB discharges show roughly the same behavior except for the very beginning and end of the discharges. The results of the measurements in typical ETB discharges show that the signals of all the channels of the AXUV photodiode arrays begin to increase more rapidly at the moment of the transition than before. The rate of the increase is larger for the edge viewing chords than for the center viewing ones, which indicates the flattening of the radiation profile following the change in the electron density profile after the formation of the ETB. However, the signals for the edge chords tend to saturate after several tens of milliseconds, while they still continue to increase for the central chords

  10. Avalanche analysis from multi-electrode ensemble recordings in cat, monkey and human cerebral cortex during wakefulness and sleep.

    Directory of Open Access Journals (Sweden)

    Nima eDehghani

    2012-08-01

    Full Text Available Self-organized critical states are found in many natural systems, from earthquakes to forest fires, they have also been observed in neural systems, particularly, in neuronal cultures. However, the presence of critical states in the awake brain remains controversial. Here, we compared avalanche analyses performed on different in vivo preparations during wakefulness, slow-wave sleep and REM sleep, using high-density electrode arrays in cat motor cortex (96 electrodes, monkey motor cortex and premotor cortex and human temporal cortex (96 electrodes in epileptic patients. In neuronal avalanches defined from units (up to 160 single units, the size of avalanches never clearly scaled as power-law, but rather scaled exponentially or displayed intermediate scaling. We also analyzed the dynamics of local field potentials (LFPs and in particular LFP negative peaks (nLFPs among the different electrodes (up to 96 sites in temporal cortex or up to 128 sites in adjacent motor and pre-motor cortices. In this case, the avalanches defined from nLFPs displayed power-law scaling in double logarithmic representations, as reported previously in monkey. However, avalanche defined as positive LFP (pLFP peaks, which are less directly related to neuronal firing, also displayed apparent power-law scaling. Closer examination of this scaling using the more reliable cumulative distribution function (CDF and other rigorous statistical measures, did not confirm power-law scaling. The same pattern was seen for cats, monkey and human, as well as for different brain states of wakefulness and sleep. We also tested other alternative distributions. Multiple exponential fitting yielded optimal fits of the avalanche dynamics with bi-exponential distributions. Collectively, these results show no clear evidence for power-law scaling or self-organized critical states in the awake and sleeping brain of mammals, from cat to man.

  11. Group Dynamics and Decision Making: Backcountry Recreationists in Avalanche Terrain

    Science.gov (United States)

    Bright, Leslie Shay

    2010-01-01

    The purpose of this study was to describe and determine the prevalence of decision-making characteristics of recreational backcountry groups when making a decision of where to travel and ride in avalanche terrain from the perspective of individuals. Decision-making characteristics encompassed communication, decision-making processes, leadership,…

  12. Tuning magnetization avalanches in Mn12-acetate

    Science.gov (United States)

    Wen, Bo; McHugh, S.; Ma, Xiang; Sarachik, M. P.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Christou, G.

    2009-03-01

    We report the results of a systematic study of magnetic avalanches (abrupt magnetization reversals) in the molecular magnet Mn12-acetate using a micron-sized Hall sensor array. Measurements were taken for: (a) fixed magnetic field (constant barrier against spin reversal); and (b) fixed energy release obtained by adjusting the barrier and δM. A detailed comparison with the theory of magnetic deflagration of Garanin and Chudnovsky [1] will be presented and discussed. [1] D. A. Garanin and E. M. Chudnovsky, Phys. Rev. B 76, 054410 (2007)

  13. Influence of Irradiation Time on Structural, Morphological Properties of ZnO-NRs Films Deposited by MW-CBD and Their Photodiode Applications

    Directory of Open Access Journals (Sweden)

    Saliha Ilican

    2017-01-01

    Full Text Available Microwave-assisted chemical bath deposition (MW-CBD was used to deposit zinc oxide nanorods (ZnO-NRs films by using different microwave irradiation time. The films exhibit a good crystallinity having a hexagonal wurtzite phase formation. Although the dominant preferred orientation was not observed for the ZnO-5 and ZnO-10, ZnO-8 showed (002 preferred orientation. The emission scanning electron microscope (FESEM showed almost randomly oriented hexagonal nanorods on the surface. A slight decrease in the length of the observed hexagonal nanorods due to the increase in the irradiation time was observed, changing from 550 nm to 300 nm. The p-Si/n-ZnO-NRs heterojunction photodiodes were fabricated. The current-voltage characteristics of these photodiodes were investigated under dark and different illumination intensity. An increase in the reverse current with increasing illumination intensity confirmed that the fabricated photodiodes exhibited a photoconducting behavior. In addition, the barrier height and series resistance values of the photodiodes were determined from capacitance-voltage measurements.

  14. Characteristics of debris avalanche deposits inferred from source volume estimate and hummock morphology around Mt. Erciyes, central Turkey

    Science.gov (United States)

    Hayakawa, Yuichi S.; Yoshida, Hidetsugu; Obanawa, Hiroyuki; Naruhashi, Ryutaro; Okumura, Koji; Zaiki, Masumi; Kontani, Ryoichi

    2018-02-01

    Debris avalanches caused by volcano sector collapse often form characteristic depositional landforms such as hummocks. Sedimentological and geomorphological analyses of debris avalanche deposits (DADs) are crucial to clarify the size, mechanisms, and emplacement of debris avalanches. We describe the morphology of hummocks on the northeastern flank of Mt. Erciyes in Kayseri, central Turkey, likely formed in the late Pleistocene. Using a remotely piloted aircraft system (RPAS) and the structure-from-motion and multi-view stereo (SfM-MVS) photogrammetry, we obtained high-definition digital elevation model (DEM) and orthorectified images of the hummocks to investigate their geometric features. We estimated the source volume of the DAD by reconstructing the topography of the volcano edifice using a satellite-based DEM. We examined the topographic cross sections based on the slopes around the scar regarded as remnant topography. Spatial distribution of hummocks is anomalously concentrated at a certain distance from the source, unlike those that follow the distance-size relationship. The high-definition land surface data by RPAS and SfM revealed that many of the hummocks are aligned toward the flow direction of the debris avalanche, suggesting that the extensional regime of the debris avalanche was dominant. However, some displaced hummocks were also found, indicating that the compressional regime of the flow contributed to the formation of hummocks. These indicate that the flow and emplacement of the avalanche were constrained by the topography. The existing caldera wall forced the initial eastward flow to move northward, and the north-side caldera wall forced the flow into the narrow and steepened outlet valley where the sliding debris underwent a compressional regime, and out into the unconfined terrain where the debris was most likely emplaced on an extensional regime. Also, the estimated volume of 12-15 × 108 m3 gives a mean thickness of 60-75 m, which is much

  15. A Novel Ring Shaped Photodiode for Reflectance Pulse Oximetry in Wireless Applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2007-01-01

    gives optimal gathering of light and thereby enabling lower LED drive currents and lower power consumption. To further optimize the photodiode a two layer SiO2/SiN interference filter is employed yielding 98% transmission at the wavelengths of the LED and damping of other wavelengths. The presented...

  16. HgCdTe APD-based linear-mode photon counting components and ladar receivers

    Science.gov (United States)

    Jack, Michael; Wehner, Justin; Edwards, John; Chapman, George; Hall, Donald N. B.; Jacobson, Shane M.

    2011-05-01

    Linear mode photon counting (LMPC) provides significant advantages in comparison with Geiger Mode (GM) Photon Counting including absence of after-pulsing, nanosecond pulse to pulse temporal resolution and robust operation in the present of high density obscurants or variable reflectivity objects. For this reason Raytheon has developed and previously reported on unique linear mode photon counting components and modules based on combining advanced APDs and advanced high gain circuits. By using HgCdTe APDs we enable Poisson number preserving photon counting. A metric of photon counting technology is dark count rate and detection probability. In this paper we report on a performance breakthrough resulting from improvement in design, process and readout operation enabling >10x reduction in dark counts rate to ~10,000 cps and >104x reduction in surface dark current enabling long 10 ms integration times. Our analysis of key dark current contributors suggest that substantial further reduction in DCR to ~ 1/sec or less can be achieved by optimizing wavelength, operating voltage and temperature.

  17. A high current, high speed pulser using avalanche transistors

    International Nuclear Information System (INIS)

    Hosono, Yoneichi; Hasegawa, Ken-ichi

    1985-01-01

    A high current, high speed pulser for the beam pulsing of a linear accelerator is described. It uses seven avalanche transistors in cascade. Design of a trigger circuit to obtain fast rise time is discussed. The characteristics of the pulser are : (a) Rise time = 0.9 ns (FWHM) and (d) Life time asymptotically equals 2000 -- 3000 hr (at 50 Hz). (author)

  18. Kinetic modelling of runaway electron avalanches in tokamak plasmas.

    Czech Academy of Sciences Publication Activity Database

    Nilsson, E.; Decker, J.; Peysson, Y.; Granetz, R.S.; Saint-Laurent, F.; Vlainic, Milos

    2015-01-01

    Roč. 57, č. 9 (2015), č. článku 095006. ISSN 0741-3335 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : plasma physics * runaway electrons * knock-on collisions * tokamak * Fokker-Planck * runaway avalanches Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.404, year: 2015

  19. Snow avalanche hazard of the Krkonose National Park, Czech Republic

    Czech Academy of Sciences Publication Activity Database

    Blahůt, Jan; Klimeš, Jan; Balek, Jan; Hájek, P.; Červená, L.; Lysák, J.

    2017-01-01

    Roč. 13, č. 2 (2017), s. 86-90 ISSN 1744-5647 R&D Projects: GA MV VG20132015115 Institutional support: RVO:67985891 Keywords : snow avalanches * hazard * inventory * hazard mitigation * Krkonoše Subject RIV: DE - Earth Magnetism, Geodesy, Geography OBOR OECD: Physical geography Impact factor: 2.174, year: 2016

  20. Investigation of Avalanche Photodiodes Radiation Hardness for Baryonic Matter Studies

    Czech Academy of Sciences Publication Activity Database

    Kushpil, Vasilij; Mikhaylov, Vasily; Ladygin, V.; Kugler, Andrej; Kushpil, Svetlana; Svoboda, Ondřej; Tlustý, Pavel

    2016-01-01

    Roč. 13, č. 1 (2016), s. 120-126 ISSN 1547-4771 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : APDs * detectors * neutrons Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders